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Sample records for ultrathin hfo2 dielectric

  1. Direct tunneling stress-induced leakage current in ultrathin HfO2/SiO2 gate dielectric stacks

    NASA Astrophysics Data System (ADS)

    Samanta, Piyas; Man, Tsz Yin; Zhang, Qingchun; Zhu, Chunxiang; Chan, Mansun

    2006-11-01

    The conduction mechanism(s) and behavior of direct tunneling stress-induced leakage current (SILC) through ultrathin hafnium oxide (HfO2)/silicon dioxide (SiO2) dual layer gate stack in metal-oxide-semiconductor (MOS) devices have been experimentally investigated in-depth. Both transient and steady-state SILCs have been studied after constant voltage stress (CVS) and constant current stress (CCS) in n-MOS capacitors with negative bias on the tantalum nitride (TaN) gate. The present report clearly indicates that the observed steady-state SILC is due to assisted tunneling via both monoenergetic trapped positive charges and neutral electron traps generated in the HfO2 layer during either CVS or CCS. SILC measured immediately after stress decays slowly due to tunnel detrapping of stress-induced trapped holes in the HfO2 layer. Furthermore, the mechanisms for stress-induced charge carrier generation/trapping and trap creation in the dielectric have been discussed. Our analysis also shows that CVS degrades the dielectric integrity more severely than CCS in the 4.2nm physically thick HfO2/SiO2 stack.

  2. Electronic properties of ultrathin HfO2, Al2O3, and Hf-Al-O dielectric films on Si(100) studied by quantitative analysis of reflection electron energy loss spectra

    NASA Astrophysics Data System (ADS)

    Jin, Hua; Oh, Suhk Kun; Kang, Hee Jae; Tougaard, Sven

    2006-10-01

    Quantitative analysis of reflection electron energy loss spectra for ultrathin HfO2, Al2O3, and Hf-Al-O dielectric thin films on Si(100) were carried out by using Tougaard-Yubero [Surf. Interface Anal. 36, 824 (2004)] QUEELS-ɛ(k ,ω)-REELS software. Experimental cross sections obtained from reflection electron energy loss spectroscopy were compared with theoretical inelastic scattering cross section Ksc deduced from the simulated energy loss function (ELF). The ELF is expressed as a sum of Drude oscillators. For HfO2, the ELF shows peaks in the vicinity of 10, 17, 22, 27, 37, and 47eV. For Al2O3, a broad peak at 22eV with a very weak shoulder at 14eV and a shoulder at 32eV were observed, while for the Al2O3 doped HfO2, the peak position is similar to that of HfO2. This indicates that when Hf-Al-O film is used as a gate dielectric in a complementary metal-oxide semiconductor transistor, its electronic structure is mainly determined by the d state of Hf. In addition, the inelastic mean free path (IMFP) was also calculated from the theoretical inelastic scattering cross section. The IMFPs at 300eV were about 7.05, 9.62, and 8.48Å and those at 500eV were 11.42, 15.40, and 13.64Å for HfO2, Al2O3, and Hf-Al-O, respectively. The method of determining the IMFP from the ELF is a convenient tool for ultrathin dielectric materials.

  3. HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

    NASA Astrophysics Data System (ADS)

    Agrawal, Khushabu S.; Patil, Vilas S.; Khairnar, Anil G.; Mahajan, Ashok M.

    2016-02-01

    Interfacial properties of the ALD deposited HfO2 over the surface nitrided germanium substrate have been studied. The formation of GeON (∼1.7 nm) was confirmed by X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron spectroscopy (HRTEM) over the germanium surface. The effect of post deposition annealing temperature was investigated to study the interfacial and electrical properties of hafnium oxide/germanium oxynitride gate stacks. The high-k MOS devices with ultrathin GeON layer shows the good electrical characteristics including higher k value ∼18, smaller equivalent oxide thickness (EOT) around 1.5 nm and smaller hysteresis value less than 170 mV. The Qeff and Dit values are somewhat greater due to the (1 1 1) orientation of the germanium and may be due to the presence of nitrogen at the interface. The Fowler-Northeim (FN) tunneling of Ge MOS devices has been studied. The barrier height ΦB extracted from the plot is ∼1 eV.

  4. The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

    NASA Astrophysics Data System (ADS)

    Seo, Minha; Ho Rha, Sang; Keun Kim, Seong; Hwan Han, Jeong; Lee, Woongkyu; Han, Sora; Seong Hwang, Cheol

    2011-07-01

    The electrical leakage current of thin rutile structured TiO2 films deposited by atomic layer deposition on a Ru electrode was enormously reduced by depositing an extremely thin HfO2 (< 1 nm) on top. The sacrifice of the capacitance density by the HfO2 was minimized. The leakage mechanism analysis on the Pt/TiO2/Ru and Pt/HfO2/TiO2/Ru structures revealed that the improvement in leakage current was attributed to the reduction of defect (trap) density in the TiO2 film. The interfacial potential barrier height for electron transport in thinner (˜ 10 nm) TiO2 films was lower than that of thicker (˜ 20 nm) TiO2 films, which resulted in a higher leakage current in these films. The capping of ultra-thin (˜ 0.7 nm) HfO2 films effectively increased the potential barrier height, and the leakage current was decreased accordingly. The leakage current behavior was systematically analyzed from quantum mechanical transport simulations.

  5. Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices

    NASA Astrophysics Data System (ADS)

    Park, Jae Beom; Lim, Woong Sun; Park, Byoung Jae; Park, Ih Ho; Kim, Young Woon; Yeom, Geun Young

    2009-03-01

    Precise etch depth control of ultra-thin HfO2 (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl3 gas. A monolayer etching condition of 1.2 Å/cycle with a low surface roughness and an unchanged surface composition was observed for ultra-thin, ALET-etched HfO2 by supplying BCl3 gas and an Ar beam at higher levels than the critical pressure and dose, respectively. When HfO2-nMOSFET devices were fabricated by ALET, a 70% increase in the drain current and a lower leakage current were observed compared with the device fabricated by conventional reactive ion etching, which was attributed to the decreased structural and electrical damage.

  6. Grain boundary-driven leakage path formation in HfO 2 dielectrics

    NASA Astrophysics Data System (ADS)

    Bersuker, G.; Yum, J.; Vandelli, L.; Padovani, A.; Larcher, L.; Iglesias, V.; Porti, M.; Nafría, M.; McKenna, K.; Shluger, A.; Kirsch, P.; Jammy, R.

    2011-11-01

    The evolution over time of the leakage current in HfO2-based MIM capacitors under continuous or periodic constant voltage stress (CVS) was studied for a range of stress voltages and temperatures. The data were analyzed based on the results of conductive atomic force microscopy (AFM) measurements demonstrating preferential current flow along grain boundaries (GBs) in the HfO2 dielectric and ab initio calculations, which show the formation of a conductive sub-band due to the precipitation of oxygen vacancies at the GBs. The simulations using the statistical multi-phonon trap-assisted tunneling (TAT) current description successfully reproduced the experimental leakage current stress time dependency by using the calculated energy characteristics of the O-vacancies. The proposed model suggests that the observed reversible increase in the stress current is caused by segregation of the oxygen vacancies at the GBs and their conversion to the TAT-active charge state caused by reversible electron trapping during CVS.

  7. Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

    NASA Astrophysics Data System (ADS)

    Dai, J. Y.; Lee, P. F.; Wong, K. H.; Chan, H. L. W.; Choy, C. L.

    2003-07-01

    Epitaxial yttrium-stabilized HfO2 thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550 °C. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si//(100)HfO2 and [001]Si//[001]HfO2. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion. X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO2 thin film on bare Si is via a direct growth mechanism without involving the reaction between Hf atoms and SiO2 layer. High-frequency capacitance-voltage measurement on an as-grown 40-Å yttrium-stabilized HfO2 epitaxial film yielded an effective dielectric constant of about 14 and equivalent oxide thickness to SiO2 of 12 Å. The leakage current density is 7.0×10-2 A/cm2 at 1 V gate bias voltage.

  8. Effects of Ti doping on the dielectric properties of HfO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Pokhriyal, S.; Biswas, S.

    2016-05-01

    We report the effects of Ti doping on the dielectric properties of HfO2 [Hf1-xTixO2 (x = 0.2-0.8)] nanoparticles at room temperature. The Hf1-xTixO2 nanoparticles were synthesized by a wet chemical process. The structural and morphological properties of the derived samples were analyzed with X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM). Impedance analysis was performed in pelletized samples in the frequency range of 1 MHz to 1 GHz. The obtained results were analyzed in correlation with microstructure and doping concentration in the derived samples. The average size of the Hf1-xTixO2 nanoparticles is typically in the range of 4-8 nm depending on the processing temperature. The Hf1-xTixO2 nanoparticles show reduction in crystallinity with the increase in Ti doping. The dielectric constants of the derived samples decrease with the increase in frequency. The ac-conductivity in the samples increases with the increase in frequency irrespective of Ti concentration and shows significant drop with the increase in Ti concentration at all frequencies.

  9. The thickness measurement of ultrathin films from new high-k material HfO2 by grazing incidence x-ray reflectivity

    NASA Astrophysics Data System (ADS)

    Jia, Yabin; Gao, Huifang; Li, Xu; Yao, Yaxuan; Wang, Meiling; Tao, Xingfu; Tian, Rongrong; Ren, Lingling; Qin, Lin

    2016-06-01

    The thickness of HfO2 ultrathin films was determined by grazing incidence x-ray reflectivity (GIXRR) with simulation. Two samples were prepared by atomic layer deposition, and the Si substrate of one sample was treated by HF acid (1:20) to erase the native oxide layer, while the other was not. According to the GIXRR, the films consisted of two contamination layers, an interface layer, a HfO2 layer and a native oxide layer (except for the acid-treated sample) from top to bottom. As a result, the HfO2 thickness of the two samples was 1.23 nm and 1.25 nm respectively, and the thicknesses of the interface layers between the HfO2 and the Si substrate were 0.1 nm and 0.95 nm respectively. The chemical states of the film were investigated by ultrasonification and x-ray photoemission spectroscopy (XPS), and the thickness was verified by transmission electron microscopy (TEM). All these phenomena proved that GIXRR is a powerful and effective piece of technology for characterizing HfO2 ultrathin film.

  10. Bias temperature instability comparison of CMOS LTPS-TFTs with HfO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    Ma, William Cheng-Yu; Huang, Chi-Yuan

    2015-12-01

    In this paper, the positive and negative bias temperature instability (P/NBTI) of complementary metal-oxide-semiconductor (CMOS) low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are studied simultaneously. Significant threshold voltage shift ΔVTH, degradation of the subthreshold swing S.S. and transconductance Gm are observed for both n-type LTPS-TFTs after PBTI stress and p-type LTPS-TFTs after NBTI stress. Moreover, the Gm degradation rate with the stress time of p-type devices during NBTI shows significantly different behavior from the PBTI of n-type devices. The PBTI of n-type device shows a saturation behavior of the Gm degradation with various stress bias and temperature. Conversely, the NBTI of p-type device shows an enhanced Gm degradation rate with the increase of stress time and stress temperature. In addition, the threshold voltage shift |ΔVTH| of PBTI does not obey the traditional empirical power law model, but the NBTI obeys it with higher time exponent. Consequently, the NBTI of the p-type device shows worse driving current Idrv degradation than the PBTI of the n-type device mainly due to the different Gm degradation behavior.

  11. Effects of adding HfO2 on the microstructure and dielectric properties of giant dielectric constant ceramic CaCu3Ti4O12

    NASA Astrophysics Data System (ADS)

    Yuan, W. X.; Hark, S. K.

    2010-03-01

    CaCu3Ti4O12 (CCTO), an unusual perovskite-like ceramic, is known for its extraordinarily high (˜10^4) and relatively frequency independent dielectric constant. It has drawn a lot of attention recently because of its potential applications in microelectronics and microwave devices. In this investigation, HfO2 powder was added to a pre-reacted CCTO powder, which was synthesized by a conventional solid-state reaction, at different concentrations from 1 to 70 wt% and the mixture was sintered into disc-shaped ceramic samples. The effects of adding HfO2 on the microstructure and dielectric properties of CCTO ceramics were investigated. In general, we found that the dielectric constant tends to increase with HfO2 addition up to 8 wt% and then decrease with further addition. Moreover, the dielectric loss was also influenced by the addition of HfO2, and a low loss tangent of ˜0.035 was obtained. The ac conductivity, impedance, complex dielectric permittivity and electric modulus graphs were used to analyze the data. These observations were explained on the basis of the internal-barrier-layer capacitor model with Maxwell-Wagner relaxations.

  12. Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Shiye; Liu, Weili; Wan, Qing; Dai, J. Y.; Lee, P. F.; Suhua, Luo; Shen, Qinwo; Zhang, Miao; Song, Zhitang; Lin, Chenglu

    2005-03-01

    A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2/SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current-voltage (I -V) and capacitance-voltage (C-V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm-2 was achieved.

  13. Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

    PubMed

    Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

    2011-05-13

    The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process. PMID:21430314

  14. Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2

    NASA Astrophysics Data System (ADS)

    Seguini, G.; Llamoja Curi, J.; Spiga, S.; Tallarida, G.; Wiemer, C.; Perego, M.

    2014-12-01

    Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order of 1012 Au NPs cm-2 were obtained without any additional thermal treatment independently from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be effective for h ≥ 1.0 nm where the Au NPs diameter is in the 5-10 nm range and the density is around 1011 Au NPs cm-2. The effect of a subsequent high temperature (400-800 °C) annealing in N2 atmosphere on the Au NPs was investigated as well. For h ≤ 1.0 nm, the Au NPs characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the cristallinity of the Au NPs. For the thicker films (2.0 ≤ h ≤ 6.0 nm), the thermal treatment becomes effective to induce the SSD. The proposed methodology can be exploited for the synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

  15. Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

    NASA Astrophysics Data System (ADS)

    Park, Sang-Uk; Kwon, Hyuk-Min; Han, In-Shik; Jung, Yi-Jung; Kwak, Ho-Young; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Kang, Chang-Yong; Lee, Byoung-Hun; Jammy, Raj; Lee, Hi-Deok

    2011-10-01

    In this paper, two kinds of multilayered metal-insulator-metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/µm2) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/µm2), while maintaining a low leakage current of about 50 nA/cm2 at 1 V. The quadratic voltage coefficient of capacitance, α gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated.

  16. Atomic-layer-deposited Al2O3-HfO2 laminated and sandwiched dielectrics for metal insulator metal capacitors

    NASA Astrophysics Data System (ADS)

    Ding, Shi-Jin; Zhang, David Wei; Wang, Li-Kang

    2007-02-01

    Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited Al2O3-HfO2 laminated and sandwiched dielectrics have been fabricated and electrically compared for analog circuit applications. The experimental results indicate that the laminated dielectrics exhibit much better leakage and breakdown characteristics than the sandwiched ones while maintaining higher capacitance densities and acceptable voltage linearity. In respect of the 1 nm Al2O3 and 10 nm HfO2 laminated dielectric, the resulting capacitor offers an extremely low leakage current of 2.4 × 10-9 A cm-2 at 8 V and a breakdown electric field of ~3.3 MV cm-1 at 125 °C together with a capacitance density of ~3.1 fF µm-2 and voltage coefficients of capacitance of 100 ppm V-2 and -80 ppm V-1 at 100 kHz. The superiority of the laminated dielectrics correlates with inhibition of HfO2 crystallization, discontinuity of the grain boundary channels from the top to the bottom and changes of the dielectric electronic properties due to the bonding and polarization effects at the multi-interfaces.

  17. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

    PubMed

    Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-08-17

    Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate. PMID:27467383

  18. A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

    NASA Astrophysics Data System (ADS)

    Maity, Niladri Pratap; Maity, Reshmi; Thapa, R. K.; Baishya, Srimanta

    2016-07-01

    In this paper, an analytical model for evaluation of tunneling current density of ultra thin MOS devices is presented. The impacts of the promising high-k dielectric material, HfO2 on the current density model have been carried out. In this work, improvement in the results is brought in by taking into account the barrier height lowering due to the image force effect. The considered voltage range is from 0 to ψ1/e i.e., 0 < V < ψ1/e, where ψ1 is the barrier height at the interface of metal and the oxide. Initially we are neglecting the image force effect for a MOS device consisting asymmetric barrier. Later, image force effect of ultra thin oxide layer has been introduced for practical potential barrier by superimposing the potential barrier on the trapezoidal barrier. Theoretical predictions are compared with the results obtained by the 2-D numerical device simulator ATLAS and published experimental results. Excellent agreements among the three are observed.

  19. Electrical Characterization of Metal Insulator Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

    NASA Astrophysics Data System (ADS)

    Huang, Yu-Jian; Huang, Yue; Ding, Shi-Jin; Zhang, Wei; Liu, Ran

    2007-10-01

    Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12 nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5 fF/μm2 at 100 kHz, a small leakage current density of 6.4×10-9 A/cm2 at 1.8 V and 125°C, a breakdown electric field of 2.6 MV/cm as well as voltage coefficients of capacitance (VCCs) of 2110 ppm/V2 and -824 ppm/V at 100 kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.

  20. Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe /Si substrates

    NASA Astrophysics Data System (ADS)

    Jang, Jiyoung; Park, Tae Joo; Kwon, Ji-Hwan; Jang, Jae Hyuck; Hwang, Cheol Seong; Kim, Miyoung

    2008-06-01

    In this investigation, HfO2 thin films were deposited on strained and strain-relaxed epitaxial-SiGe /Si substrates, and subsequently subjected to annealing. Electron energy-loss spectroscopy analysis was used to investigate the electronic structure and composition of the film as well as the interfacial layer (IL). While the energy-loss function of the dielectric films revealed predominant Si diffusion in the strained substrates, post deposition annealing (PDA) significantly influenced the diffusion and altered the local composition of the IL in strain-relaxed substrates. Analysis of electronic structures revealed the origin of significant loss of Ge atoms at the IL during PDA.

  1. Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Everaert, J. L.; Rosseel, E.; Dekoster, J.; Pap, A.; Meszaros, A.; Kis-Szabo, K.; Pavelka, T.

    2010-03-01

    A method is described to determine the mobility of inversion charge carriers on Si substrates with SiO2 and HfO2 gate dielectrics. It is a completely contactless method combining corona charge and charge spreading metrology. [Patent Application Nos. EP 07118673 and U.S. 60940594.] It is shown that from such measurements mobility of inversion charge carriers can be calculated as a function of the effective electric field. The resulting mobility curves are comparable to those found in transistors.

  2. Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N) underlayers

    NASA Astrophysics Data System (ADS)

    Green, M. L.; Ho, M.-Y.; Busch, B.; Wilk, G. D.; Sorsch, T.; Conard, T.; Brijs, B.; Vandervorst, W.; Räisänen, P. I.; Muller, D.; Bude, M.; Grazul, J.

    2002-12-01

    A study was undertaken to determine the efficacy of various underlayers for the nucleation and growth of atomic layer deposited HfO2 films. These were compared to films grown on hydrogen terminated Si. The use of a chemical oxide underlayer results in almost no barrier to film nucleation, enables linear and predictable growth at constant film density, and the most two-dimensionally continuous HfO2 films. The ease of nucleation is due to the large concentration of OH groups in the hydrous, chemical oxide. HfO2 grows on chemical oxide at a coverage rate of about 14% of a monolayer per cycle, and films are about 90% of the theoretical density of crystalline HfO2. Growth on hydrogen terminated Si is characterized by a large barrier to nucleation and growth, resulting in three-dimensional, rough, and nonlinear growth. Thermal oxide/oxynitride underlayers result in a small nucleation barrier, and nonlinear growth at low HfO2 coverages. The use of chemical oxide underlayers clearly results in the best HfO2 layers. Further, the potential to minimize the chemical oxide thickness provides an important research opportunity for high-κ gate dielectric scaling below 1.0 nm effective oxide thickness.

  3. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

    NASA Astrophysics Data System (ADS)

    Babadi, Aein S.; Lind, Erik; Wernersson, Lars-Erik

    2016-03-01

    The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

  4. A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

    NASA Astrophysics Data System (ADS)

    Gassilloud, R.; Maunoury, C.; Leroux, C.; Piallat, F.; Saidi, B.; Martin, F.; Maitrejean, S.

    2014-04-01

    We studied Ta, TaN, and sub-stoichiometric TaNx electrodes (obtained by nitrogen redistribution in Ta/TaN or Ti/TaN bilayers) deposited on thermal SiO2 and HfO2/IL (0.8 nm SiO2 IL, i.e., interlayer) stacks. Effective work-functions (WF) were extracted on MOS capacitor structures on SiO2 bevelled insulator of 4.2 eV for pure Ta, 4.6 eV for TaN, and 4.3 eV for sub-stoichiometric TaNx. This intermediate WF value is explained by TaN nitrogen redistribution with reactive Ta or Ti elements shifting the gate work-function toward the Si conduction band. The same electrodes deposited on an HfO2/IL dielectric showed different behavior: First, the Ta/HfO2/IL stack shows a +200 meV WF increase (towards the Si valence band) compared to the SiO2 dielectric stack. This increase is explained by the well-known HfO2/IL dipole formation. Second, in contrast to electrodes deposited on SiO2, sub-stoichiometric TaNx/HfO2 is found to have a lower WF (4.3 eV), than pure Ta on HfO2 (4.4 eV). This inversion in work-function behavior measured on SiO2 vs. HfO2 is explained by the nitrogen redistribution in Ta/TaN bilayer together with diffusion of nitrogen through the HfO2 layer, leading to Si-N formation which prevents dipole formation at the HfO2/IL interface.

  5. Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

    NASA Astrophysics Data System (ADS)

    Pei, Yanli; Yin, Chengkuan; Kojima, Toshiya; Nishijima, Masahiko; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa

    2009-07-01

    In this letter, cobalt nanodots (Co-NDs) had been formed via a self-assembled nanodot deposition. High resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of ˜2 nm and high density of (4-5)×1012/cm2. The metal-oxide-semiconductor device with high density Co-NDs floating gate and high-k HfO2 blocking dielectric exhibits a wide range memory window (0-12 V) due to the charge trapping into and distrapping from Co-NDs. After 10 years retention, a large memory window of ˜1.3 V with a low charge loss of ˜47% was extrapolated. The relative longer data retention demonstrates the advantage of Co-NDs for nonvolatile memory application.

  6. Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics for metal-insulator-metal capacitor applications

    NASA Astrophysics Data System (ADS)

    Ding, Shi-Jin; Zhu, Chunxiang; Li, Ming-Fu; Zhang, David Wei

    2005-08-01

    Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics have been investigated to replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator-metal capacitors applications. In the case of 1-nm-Al2O3, sufficiently good electrical performances are achieved, including a high dielectric constant of ˜17, a small dissipation factor of 0.018 at 100kHz, an extremely low leakage current of 7.8×10-9A/cm2 at 1MV/cm and 125°C, perfect voltage coefficients of capacitance (74ppm/V2 and 10ppm/V). The quadratic voltage coefficient of capacitance decreases with the applied frequency due to the change of relaxation time with different carrier mobility in insulator, and correlates with the dielectric composition and thickness, which is of intrinsic property owing to electric field polarization. Furthermore, the conduction mechanism of the AHA dielectrics is also discussed, indicating the Schottky emission dominated at room temperature.

  7. Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models.

    PubMed

    Nakamura, Hisao; Asai, Yoshihiro

    2016-04-01

    We studied the quantum transport mechanism of an ultra-thin HfO2-based resistive random access memory (ReRAM) cell with TiN electrodes and proposed the design of a sub-10 nm scale device. It is believed that formation and rupture of the conduction path in the local filament causes the switching between high and low resistive states. However, the validity of this simple filament model is not obvious in the sub-10 nm scale device because the redox processes occur mainly in a few nm range at the interface. Furthermore, the intrinsic transport mechanism of the device, in particular, quantum coherence, depends on device materials and length-scale. The relationship between the redox states and the transport mechanism like ballistic or hopping is still under debate when the device length scale is less than 10 nm. In the present study, we performed first-principles calculations of the non-equilibrium Green's function including electron-phonon interactions. We examined several characteristic structures of the HfO(x) wire (nano-scale conduction path) and the interfaces between the resistive switching layer and electrodes. We found that the metal buffer layer induced a change in the oxygen-reduction site from the interface of HfO(x)/TiN to the buffer layer. Even when the inserted buffer layer is a few atomic layers, this effect plays an important role in the enhancement of the performance of ON/OFF resistive switching and in the reduction of the inelastic electric current by electron-phonon scattering. The latter suppresses the hopping mechanism, which makes the ballistic conduction the dominant mechanism. We evaluated the activation energy in the high temperature limit by using the first-principles results of inelastic current. Our theoretical model explains the observed crossover of the temperature dependence of ReRAM cells and gives a new insight into the principle of operation on a sub-10 nm scale ReRAM device. PMID:26975565

  8. Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

    NASA Astrophysics Data System (ADS)

    Mannequin, C.; Gonon, P.; Vallée, C.; Bsiesy, A.; Grampeix, H.; Jousseaume, V.

    2011-11-01

    Dielectric relaxation is studied in 10 nm HfO2 thin films which are deposited by atomic layer deposition on TiN and Pt electrodes. Transient currents are recorded from 10-3 s to 10 s, as a function of bias (0.1 V to 1 V) and temperature (20 °C to 180 °C). A Curie-von Schweidler law is observed, I = Q0/tα. The power law exponent α is constant with bias and strongly depends on the temperature (varying in the 0.65-1.05 range, with a peak at 75 °C). The amplitude Q0 is described by a relation of the form Q0 = C0Vβ, where the factor C0 is weakly activated and the exponent β varies with temperature (in the 0.9-1.5 range as T varies). Transient currents are discussed along with tunneling based models from the literature. To complement transient current experiments, admittance spectroscopy (conductance G and capacitance C) is performed at low frequencies, from 0.01 Hz to 10 kHz. The dispersion law of the conductance is of the form G ˜ ωs. The capacitance is the sum of two terms, a non-dispersive term (C∞) and a low-frequency dispersive term, CLF ˜ ω-n. The critical exponents s and n verify s ≈ α and n ≈ 1-α. At room temperature, the dielectric constant is expressed as ɛ' = Δɛ' f-n+ ɛ'∞, where ɛ'∞ = 11.1, n ≈ 0.2/0.3 (Pt/TiN), and Δɛ' ≈ 1.5/0.7 (Pt/TiN).

  9. Improvements in the electrical properties of high-k HfO2 dielectric films on Si1-xGex substrates by postdeposition annealing

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Kim, Jeong Hwan; Jang, Jae Hyuk; Seo, Minha; Hwang, Cheol Seong; Won, Jeong Yeon

    2007-01-01

    The changes in atomic-layer-deposited HfO2 films on Si and Si1-xGex (x =0.1, 0.2, and 0.3) substrates by postdeposition annealing were studied. The migration of Ge reduced the capacitance equivalent thickness while keeping the leakage current density almost invariant after annealing. High resolution x-ray photoelectron spectroscopy and secondary ion mass spectroscopy analyses confirmed that Ge atoms which had diffused into the HfO2 layer during the deposition were drawn back to the substrate by annealing which was accompanied by the decrease in the interfacial strain energy. A very low interface trap density (1.3×1010cm-2eV-1) was obtained when x =0.3.

  10. Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chu, L. K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.

    2011-07-01

    We investigated the passivation of In0.53Ga0.47As (001) surface by molecular beam epitaxy techniques. After growth of strained In0.53Ga0.47As on InP (001) substrate, HfO2/Al2O3 high-κ oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (Dit) of the Al2O3/In0.53Ga0.47As interface have been revealed by conductance measurement, indicating a downward Dit profile from the energy close to the valence band (medium 1012 cm-2eV-1) towards that close to the conduction band (1011 cm-2eV-1). The low Dit's are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO2 has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO2 thickness (dielectric constant of HfO2 ˜20) and the remained low Dit's due to the thin Al2O3 passivation layer. The sample with HfO2 (3.4 nm)/Al2O3 (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of ˜0.93 nm.

  11. Dielectric properties of hydrogen-terminated Si(111) ultrathin films

    NASA Astrophysics Data System (ADS)

    Nakamura, Jun; Ishihara, Shunsuke; Natori, Akiko; Shimizu, Tomo; Natori, Kenji

    2006-03-01

    Dielectric properties of Si(111) ultrathin films have been investigated using first-principles ground-states calculations in external electrostatic fields. With increasing thickness of Si(111) ultrathin films, the optical dielectric constant evaluated at the center of the slab converges to the experimental bulk dielectric constant at a thickness of only eight bilayers, while the energy gap of the slab is still larger than that of bulk Si. The converged theoretical dielectric constant for bulk Si is only 6.2% higher than the experimental one. Furthermore, spatial variations of the dielectric constant have also been evaluated using the position-dependent macroscopic field given by a clear-cut definition. The results show that the dielectric constant is reduced distinctly at the first few bilayers from the surface, which stems from the penetration of depolarized charges induced at the surface. Such an effective reduction of the depolarization field near the surface is one of the reasons for the decrease in optical dielectric constant for the ultrathin films.

  12. Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

    NASA Astrophysics Data System (ADS)

    Kim, Seung Hyun; Seok, Tae Jun; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-03-01

    The ultrathin SiO2 interfacial layer (IL) was adopted at the interface between atomic-layer-deposited HfO2 gate dielectric film and a Si substrate, which was grown using nitric acid oxidation (NAO) and O3 oxidation (OZO) prior to HfO2 film deposition. X-ray photoelectron spectroscopy result revealed that Si diffusion from the substrate into the film was suppressed for the film with NAO compared to that with OZO, which was attributed to the higher physical density of IL. The electrical measurement using metal-insulator-semiconductor devices showed that the film with NAO exhibited higher effective permittivity and lower densities of fixed charge and slow state at the interface. Furthermore, the leakage current density at an equivalent electrical thickness was lower for the film with NAO than OZO.

  13. Crossbar Nanoscale HfO2-Based Electronic Synapses.

    PubMed

    Matveyev, Yury; Kirtaev, Roman; Fetisova, Alena; Zakharchenko, Sergey; Negrov, Dmitry; Zenkevich, Andrey

    2016-12-01

    Crossbar resistive switching devices down to 40 × 40 nm(2) in size comprising 3-nm-thick HfO2 layers are forming-free and exhibit up to 10(5) switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions, thus emulating long-term potentiation/depression properties akin to biological synapses. Both forming-free and gradual switching properties are modeled in terms of oxygen vacancy generation in an ultrathin HfO2 layer. By applying the voltage pulses to the opposite electrodes of nanodevices with the shape emulating spikes in biological neurons, spike-timing-dependent plasticity functionality is demonstrated. Thus, the fabricated memristors in crossbar geometry are promising candidates for hardware implementation of hybrid CMOS-neuron/memristor-synapse neural networks. PMID:26979725

  14. Crossbar Nanoscale HfO2-Based Electronic Synapses

    NASA Astrophysics Data System (ADS)

    Matveyev, Yury; Kirtaev, Roman; Fetisova, Alena; Zakharchenko, Sergey; Negrov, Dmitry; Zenkevich, Andrey

    2016-03-01

    Crossbar resistive switching devices down to 40 × 40 nm2 in size comprising 3-nm-thick HfO2 layers are forming-free and exhibit up to 105 switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions, thus emulating long-term potentiation/depression properties akin to biological synapses. Both forming-free and gradual switching properties are modeled in terms of oxygen vacancy generation in an ultrathin HfO2 layer. By applying the voltage pulses to the opposite electrodes of nanodevices with the shape emulating spikes in biological neurons, spike-timing-dependent plasticity functionality is demonstrated. Thus, the fabricated memristors in crossbar geometry are promising candidates for hardware implementation of hybrid CMOS-neuron/memristor-synapse neural networks.

  15. HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

    SciTech Connect

    Chen, P.T.; Sun, Y.; Kim, E.; McIntyre, P.C.; Tsai, W.; Garner, M.; Pianetta, P.; Nishi, Y.; Chui, C.O.; /UCLA

    2007-09-28

    The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopy cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.

  16. Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering.

    PubMed

    Xu, Kai; Huang, Yun; Chen, Bo; Xia, Yang; Lei, Wen; Wang, Zhenxing; Wang, Qisheng; Wang, Feng; Yin, Lei; He, Jun

    2016-06-01

    Top-gate HfS2 field-effect transistors (FETs) with 5 nm HfO2 as dielectrics are successfully demonstrated, with on/off ratio of 10(5) and subthreshold swing of 95 mV dec(-1) . Moreover, due to the self-functionalization of HfS2 , uniform and ultrathin HfO2 film free of pinhole-like defects could be deposited on HfS2 , which is dramatically different from other transition metal dichalcogenide FETs. PMID:27120487

  17. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-05-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm2V‑1s‑1 coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering.

  18. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

    PubMed Central

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-01-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm2V−1s−1 coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering. PMID:27222074

  19. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.

    PubMed

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-01-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm(2)V(-1)s(-1) coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering. PMID:27222074

  20. Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film

    NASA Astrophysics Data System (ADS)

    Han, Sun Woong; Lee, Keun Ho; Yoo, Young Bum; Park, Jee Ho; Song, Kie Moon; Baik, Hong Koo

    2016-08-01

    In this paper, solution-based deposition of HfO2 thin film at low temperature was demonstrated. By using aqueous HfCl4 solution, the precursor was effectively decomposed with low annealing temperature of 150 °C. Thus it is preferable to use this solution for dielectric coating on flexible substrates. To achieve conformal coating on substrate, formic acid as a cosolvent was added to aqueous ink solution to reduce surface tension of the solution. Due to improved coating quality of HfO2 thin film, the fabricated HfO2 gate dielectric shows reliable breakdown characteristics and low leakage current.

  1. Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping.

    PubMed

    Paskaleva, Albena; Rommel, Mathias; Hutzler, Andreas; Spassov, Dencho; Bauer, Anton J

    2015-08-12

    In this work dielectric and electrical properties of Al-doped HfO2 layers deposited by plasma-enhanced atomic layer deposition in dependence on the thickness and the added Al amount in the films have been investigated. Special attention is dedicated to C-V and I-V hysteresis analysis as a measure for trapping phenomena in the films. A detailed study of conduction mechanisms in dependence on the composition of the layers has also been performed. The densities and spatial and energy positions of traps have been examined. It is found that only a small amount of Al-doping decreases the trapping which is assigned to a reduction of oxygen vacancy-related traps in HfO2. On the contrary, higher amounts of Al introduced in HfO2 films increase the trapping ability of the stacks which is due to the introduction of deeper Al2O3-related traps. The results imply that by adding a proper amount of Al into HfO2 it is possible to tailor dielectric and electrical properties of high-k layers toward meeting the criteria for particular applications. PMID:26196163

  2. Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks

    NASA Astrophysics Data System (ADS)

    Ranjan, R.; Pey, K. L.; Tung, C. H.; Tang, L. J.; Ang, D. S.; Groeseneken, G.; De Gendt, S.; Bera, L. K.

    2005-12-01

    The chemistry of dielectric-breakdown-induced microstructural changes in HfO2 high-κ/polycrystalline silicon gate nMOSFETs under constant voltage stress has been studied. Based on an electron energy loss spectrometry analysis, the hafnium and oxygen chemical bonding in the breakdown induced Hf-based compounds of a "ball-shaped" defect is found to be different compared to the stoichiometric HfO2 and SiO2. The formation of possibly HfSixOy and HfSix compounds in the "ball-shaped" defect is attributed to a thermochemical reaction triggered by the gate dielectric breakdown.

  3. Epitaxial Thin Films of Y doped HfO2

    NASA Astrophysics Data System (ADS)

    Serrao, Claudy; Khan, Asif; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Hafnium oxide (HfO2) is one of a few metal oxides that is thermodynamically stable on silicon and silicon oxide. There has been renewed interest in HfO2 due to the recent discovery of ferroelectricity and antiferroelectricity in doped HfO2. Typical ferroelectrics - such as strontium bismuth tantalate (SBT) and lead zirconium titanate (PZT) - contain elements that easily react with silicon and silicon oxide at elevated temperatures; therefore, such ferroelectrics are not suited for device applications. Meanwhile, ferroelectric HfO2 offers promise regarding integration with silicon. The stable phase of HfO2 at room temperature is monoclinic, but HfO2 can be stabilized in the tetragonal, orthorhombic or even cubic phase by suitable doping. We stabilized Y-doped HfO2 thin films using pulsed laser deposition. The strain state can be controlled using various perovskite substrates and controlled growth conditions. We report on Y-doped HfO2 domain structures from piezo-response force microscopy (PFM) and structural parameters via X-ray reciprocal space maps (RSM). We hope this work spurs further interest in strain-tuned ferroelectricity in doped HfO2.

  4. Mechanistic Insight into the Stability of HfO2 -Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries.

    PubMed

    Ahmed, Bilal; Anjum, Dalaver H; Hedhili, Mohamed N; Alshareef, Husam N

    2015-09-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g(-1) , respectively, at current density of 100 mA g(-1) . These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2 . Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. PMID:26061915

  5. Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability.

    PubMed

    Kang, Yu-Seon; Kang, Hang-Kyu; Kim, Dae-Kyoung; Jeong, Kwang-Sik; Baik, Min; An, Youngseo; Kim, Hyoungsub; Song, Jin-Dong; Cho, Mann-Ho

    2016-03-23

    We report on changes in the structural, interfacial, and electrical characteristics of sub-1 nm equivalent oxide thickness (EOT) HfO2 grown on InAs by atomic layer deposition. When the HfO2 film was deposited on an InAs substrate at a temperature of 300 °C, the HfO2 was in an amorphous phase with an sharp interface, an EOT of 0.9 nm, and low preexisting interfacial defect states. During post deposition annealing (PDA) at 600 °C, the HfO2 was transformed from an amorphous to a single crystalline orthorhombic phase, which minimizes the interfacial lattice mismatch below 0.8%. Accordingly, the HfO2 dielectric after the PDA had a dielectric constant of ∼24 because of the permittivity of the well-ordered orthorhombic HfO2 structure. Moreover, border traps were reduced by half than the as-grown sample due to a reduction in bulk defects in HfO2 dielectric during the PDA. However, in terms of other electrical properties, the characteristics of the PDA-treated sample were degraded compared to the as-grown sample, with EOT values of 1.0 nm and larger interfacial defect states (Dit) above 1 × 10(14) cm(-2) eV(-1). X-ray photoelectron spectroscopy data indicated that the diffusion of In atoms from the InAs substrate into the HfO2 dielectric during the PDA at 600 °C resulted in the development of substantial midgap states. PMID:26928131

  6. Partially hollowed ultra-thin dielectric meta-surface for transmission manipulation.

    PubMed

    Liu, Guiqiang; Fu, Guolan; Liu, Zhengqi; Huang, Zhenping; Chen, Jian

    2016-09-01

    Impressive optical properties are numerically demonstrated in the partially hollowed dielectric meta-surface (p-HDMS), which consists of an air cavity array intercalated in an ultra-thin (~λ/6) high-index dielectric film. Multispectral transmission band-stop response with near-perfect spectral modulation depth is achieved. The spectral slop is up to 80%/nm, indicating the sharp and narrowband transmission behavior. Classical Malus law is confirmed by this sub-wavelength platform. Moreover, the multispectral light propagation manipulation can be perfectly reproduced by using the actual dielectric with absorption loss. In this all-dielectric meta-surface, conduction loss is avoided compared to its metallic plasmonic counterpart. Such configurations can therefore serve as excellent alternatives for plasmonic meta-surfaces and constitute an important step in nanophotonics. PMID:27607661

  7. Fabrication of midgap metal gates compatible with ultrathin dielectrics

    NASA Astrophysics Data System (ADS)

    Buchanan, D. A.; McFeely, F. R.; Yurkas, J. J.

    1998-09-01

    A process has been described which can produce a midgap tungsten gate compatible with the current and future complementary metal-oxide-semiconductor technology. The tungsten was deposited directly onto a 3.0 nm SiO2 gate dielectric without measurable degradation of any of its electrical properties. The tungsten deposition process yields no reactive or corrosive by-products that affect the gate dielectric integrity. The tungsten film is found to be pure within the limits of several analytical techniques and the resistivity of the tungsten films was found to be within a factor of 2 of the bulk value.

  8. Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

    NASA Astrophysics Data System (ADS)

    Hu, Hang; Zhu, Chunxiang; Lu, Y. F.; Wu, Y. H.; Liew, T.; Li, M. F.; Cho, B. J.; Choi, W. K.; Yakovlev, N.

    2003-07-01

    Thin films of HfO2 high-k dielectric have been prepared by pulsed-laser deposition at various substrate temperatures and pressures. X-ray diffraction, atomic force microscopy, secondary ion mass spectroscopy and ellipsometry were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. It is also found that the optical properties of the HfO2 thin films have strong dependence on both the deposition temperature and pressure. The electrical properties of HfO2 metal-insulator-metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 °C shows an overall high performance, such as a high capacitance density of ˜3.0 fF/μm2, a low leakage current of 2×10-9 A/cm2 at 3 V, low-voltage coefficients of capacitance, and good-frequency dispersion properties. All of these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

  9. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (<10-11 A/cm2) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  10. Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors

    NASA Astrophysics Data System (ADS)

    Das, Anindita; Chattopadhyay, Sanatan; Dalapati, Goutam K.; Chi, Dongzhi; Kumar, M. K.

    2012-10-01

    The HfO2/p-GaAs metal-oxide-semiconductor (MOS) structures have been fabricated by developing and simulating an optimized process recipe. The optical dielectric constants and refractive indices of atomic-layer-deposited (ALD) HfO2 films and the GaAs substrate are extracted from spectroscopic ellipsometer (SE) measurements. The quality of interface and that of the ALD HfO2 films is investigated by analyzing capacitance-voltage (C-V) and conductance-voltage (G-V) data. Simulations of C-V and G-V data have also been performed for a similar process recipe to comprehensively understand the electrical quality of the dielectric layer. The optical dielectric constants for HfO2 and GaAs layers are obtained to be 4.5-3.6 and 10-25, respectively, while their refractive indices are obtained to be 2.12-1.89 and 3-5.2, respectively. A frequency dispersion of the C-V graphs is observed indicating the presence of a Ga2O3 interfacial layer which has been confirmed from the device simulation. A flat band voltage shift of - (0.68-1.05) eV and interface state density of (5×1011 - 1 ×1012) cm-2 eV-1 are obtained.

  11. Molecular Layer-seeded Ultra-thin Top-gate Dielectrics for High Transconductance Graphene Transistors

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Karmel, Hunter; Alaboson, Justice; Lauhon, Lincoln; Marks, Tobin; Hersam, Mark

    2012-02-01

    The potential of graphene in integrated analog and digital circuits can only be fully realized through incorporation of ultra-thin gate dielectrics to enable large-scale small-channel graphene field-effect transistors (GFETs). Atomic-layer deposition (ALD) is a viable technique to fabricate gate-dielectrics, however, it requires a seeding layer on otherwise inert graphene. Here, we demonstrate a single molecule thick perylene-3,4,9,10-tetracarboxylic dianhydride overlayer as an effective seeding layer to grow high-κ Al2O3 on mechanically exfoliated graphene for high-performance GFETs. Using an ultra-thin (< 1nm) seeding layer, in contrast to polymer films (5-10 nm), we demonstrate fabrication of the thinnest ALD-grown gate-dielectric (4 nm) reported to date in top-gated GFETs. This yields high performance GFETs with the intrinsic transconductance parameter approaching 2.4 mS and the field-effect mobility ˜3000 cm^2/Vs. We also demonstrate generalization of this molecular layer seeded-ALD growth method to higher- κ gate dielectrics, yielding further enhanced GFET transconductance for possible application to radio-frequency circuits.

  12. Dielectric properties of cobalt ferrite nanoparticles in ultrathin nanocomposite films.

    PubMed

    Alcantara, Gustavo B; Paterno, Leonardo G; Fonseca, Fernando J; Pereira-da-Silva, Marcelo A; Morais, Paulo C; Soler, Maria A G

    2013-12-01

    Multilayered nanocomposite films (thickness 50-90 nm) of cobalt ferrite nanoparticles (np-CoFe2O4, 18 nm) were deposited on top of interdigitated microelectrodes by the layer-by-layer technique in order to study their dielectric properties. For that purpose, two different types of nanocomposite films were prepared by assembling np-CoFe2O4 either with poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonic acid) or with polyaniline and sulfonated lignin. Despite the different film architectures, the morphology of both was dominated by densely-packed layers of nanoparticles surrounded by polyelectrolytes. The dominant effect of np-CoFe2O4 was also observed after impedance spectroscopy measurements, which revealed that dielectric behavior of the nanocomposites was largely influenced by the charge transport across nanoparticle-polyelectrolyte interfaces. For example, nanocomposites containing np-CoFe2O4 exhibited a single low-frequency relaxation process, with time constants exceeding 15 ms. At 1 kHz, the dielectric constant and the dissipation factor (tan δ) of these nanocomposites were 15 and 0.15, respectively. These values are substantially inferior to those reported for pressed pellets made exclusively of similar nanoparticles. Impedance data were further fitted with equivalent circuit models from which individual contributions of particle's bulk and interfaces to the charge transport within the nanocomposites could be evaluated. The present study evidences that such nanocomposites display a dielectric behavior dissimilar from that exhibited by their individual counterparts much likely due to enlarged nanoparticle-polyelectrolyte interfaces. PMID:24145704

  13. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    NASA Astrophysics Data System (ADS)

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-02-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer.

  14. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    PubMed Central

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-01-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

  15. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.

    PubMed

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-01-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8" glass wafer. PMID:26861833

  16. Cross linking molecular systems to form ultrathin dielectric layers

    NASA Astrophysics Data System (ADS)

    Feng, Danqin

    Dehydrogenation leads to cross linking of polymer or polymer like formation in very different systems: self-assembled monolayers and in closo -carboranes leading to the formation of semiconducting and dielectric boron carbide. We find evidence of intermolecular interactions for a self-assembled monolayer (SAM) formed from a large molecular adsorbate, [1,1';4',1"-terphenyl]-4,4"-dimethanethiol, from the dispersion of the molecular orbitals with changing the wave vector k and from the changes with temperature. With the formation self assembled molecular (SAM) layer, the molecular orbitals hybridize to electronic bands, with indications of significant band dispersion of the unoccupied molecular orbitals. Although organic adsorbates and thin films are generally regarded as "soft" materials, the effective Debye temperature, indicative of the dynamic motion of the lattice normal to the surface, can be very high, e.g. in the multilayer film formed from [1,1'-biphenyl]-4,4'-dimethanethiol (BPDMT). Depending on molecular orientation, the effective Debye temperature can be comparable to that of graphite due to the 'stiffness' of the benzene rings, but follows the expected Debye-Waller behavior for the core level photoemission intensities with temperature. This is not always the case. We find that a monomolecular film formed from [1,1';4',1"-terphenyl]-4,4"-dimethanethiol deviates from Debye-Waller temperature behavior and is likely caused by temperature dependent changes in molecular orientation. We also find evidence for the increase in dielectric character with polymerization (cross-linking) in spite of the decrease in the HOMO-LUMO gap upon irradiation of TPDMT. The changes in the HOMO-LUMO gap, with cross-linking, are roughly consistent with the band dispersion. The decomposition and cross-linking processes are also accompanied by changes in molecular orientation. The energetics of the three isomeric carborane cage compounds [ closo-1,2-orthocarborane, closo-1

  17. Crystal structure of Si-doped HfO2

    NASA Astrophysics Data System (ADS)

    Zhao, Lili; Nelson, Matthew; Aldridge, Henry; Iamsasri, Thanakorn; Fancher, Chris M.; Forrester, Jennifer S.; Nishida, Toshikazu; Moghaddam, Saeed; Jones, Jacob L.

    2014-01-01

    Si-doped HfO2 was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO2 was determined as less than 9 at. %. A second phase was identified as Cristobalite (SiO2) rather than HfSiO4, the latter of which would be expected from existing SiO2-HfO2 phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO2 shows that c/b increases, while β decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

  18. Defect states in HfO 2 on deposited on Ge(1 1 1) and Ge(1 0 0) substrates

    NASA Astrophysics Data System (ADS)

    Lucovsky, G.; Seo, H.; Long, J. P.; Chung, K.-B.; Vasic, R.; Ulrich, M.

    2009-04-01

    There is considerable interest in the direct bonding between Si and Ge substrates and high-K nano-crystalline transition metal elemental and complex oxides. Implicit in this is the elimination of lower-K interfacial transition regions (ITRs) in gate stacks which limit device down-scaling of advanced devices to meet roadmap targets. A novel approach is presented in this article for (i) deposition of HfO 2 onto N-passivated Ge(1 1 1) and Ge(1 0 0) substrates, a process that also prevents subcutaneous oxidation of the Ge substrate during the deposition of nano-crystalline HfO 2 and non-crystalline Hf Si oxynitride dielectrics as well, and (ii) the effective removal of Ge-N, during an 800 °C rapid thermal annealing. Removal of Ge-N bonding has been confirmed by X-ray absorption N K 1 spectra (XAS). However, even though X-ray photoelectron spectroscopy (XPS) studies has indicated no detectable Ge-O bonding at the Ge-dielectric interfaces as-deposited, a significant amount of Ge-O bonding throughout the entire HfO 2 film is detected by XPS and XAS after the 800 °C anneal. Current-voltage measurements indicate significantly higher leakage for HfO 2 films on Ge(1 1 1) compared with Ge(1 0 0). These correlate with differences in band edge defect state densities obtained from spectroscopic measurements, and are consistent with a more columnar, bonding morphology for direct bonding of HfO 2 on Ge(1 1 1) than for Ge(1 0 0).

  19. Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2016-05-01

    Hafnium oxide (HfO2) is the potentially useful dielectric material in both; electronics to replace the conventional SiO2 as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO2 thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film

  20. SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering

    NASA Astrophysics Data System (ADS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2016-07-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I-V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  1. Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Sarkar, Pranab Kumar; Roy, Asim

    2015-08-01

    The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

  2. Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells.

    PubMed

    Isabella, Olindo; Vismara, Robin; Ingenito, Andrea; Rezaei, Nasim; Zeman, M

    2016-03-21

    The optical analysis of optically-textured and electrically-flat ultra-thin crystalline silicon (c-Si) slabs is presented. These slabs were endowed with decoupled front titanium-dioxide (TiO2) / back silicon-dioxide (SiO2) dielectric textures and were studied as function of two types of back reflectors: standard silver (Ag) and dielectric modulated distributed Bragg reflector (MDBR). The optical performance of such systems was compared to that of state-of-the-art flat c-Si slabs endowed with so-called front Mie resonators and to those of similar optical systems still endowed with the same back reflectors and decoupled front/back texturing but based on textured c-Si and dielectric coatings (front TiO2 and back SiO2). Our optimized front dielectric textured design on 2-µm thick flat c-Si slab with MDBR resulted in more photo-generated current density in c-Si with respect to the same optical system but featuring state-of-the-art Mie resonators ( + 6.4%), mainly due to an improved light in-coupling between 400 and 700 nm and light scattering between 700 and 1050 nm. On the other hand, the adoption of textured dielectric layers resulted in less photo-generated current density in c-Si up to -20.6% with respect to textured c-Si, depending on the type of back reflector taken into account. PMID:27136888

  3. Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2

    NASA Astrophysics Data System (ADS)

    Kwon, Hyuk-Min; Kim, Do-Kywn; Lim, Sung-Kyu; Hwang, Hae-Chul; Son, Seung Woo; Park, Jung Ho; Park, Won-Sang; Kim, Jin Su; Shin, Chan-Soo; Park, Won-Kyu; Lee, Jung Hee; Kim, Taewoo; Kim, Dae-Hyun

    2016-07-01

    We present an instability investigation of In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate with Al2O3 and Al2O3/HfO2 gate stacks. The device with bi-layer Al2O3/HfO2 gate stack exhibits larger shift in threshold-voltage (ΔVT) under a constant-voltage-stress condition (CVS), than one with single Al2O3 gate stack. At cryogenic temperature, the device with bi-layer Al2O3/HfO2 gate stack also induces worse hysteresis behavior than one with single Al2O3 gate stack. These are mainly attributed to more traps inside the HfO2 material, yielding a charge build-up inside the HfO2 gate dielectric. This strongly calls for a follow-up process to minimize those traps within the high-k dielectric layer and eventually to improve the reliability of InGaAs MOSFETs with HfO2-based high-k gate dielectric.

  4. Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 A˚

    NASA Astrophysics Data System (ADS)

    Chen, Yen-Ting; Zhao, Han; Yum, Jung Hwan; Wang, Yanzhen; Lee, Jack C.

    2009-05-01

    In this letter, we demonstrate the electrical properties of metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors (MOSFETs) on InP using atomic layer deposited HfO2 gate dielectric and a thin silicon interface passivation layer (Si IPL). Compared with single HfO2, the use of Si IPL results in better interface quality with InP substrate, as illustrated by smaller frequency dispersion and reduced hysteresis. MOSFETs with Si IPL show much higher drive current and transconductance, improved subthreshold swing, interface-trap density and gate leakage current with equivalent oxide thickness scaling down to 18 Å.

  5. A quantum mechanical treatment of low frequency noise in high-K NMOS transistors with ultra-thin gate dielectrics

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaochen; White, Marvin H.

    2012-12-01

    Our paper presents a quantum mechanical treatment of low-frequency noise in scaled NMOS transistors to extend the "unified" noise model and includes remote Coulomb scattering and surface roughness - the latter is a new consideration in the theory. Our experimental work focuses on scaled NMOS devices with a composite dielectric consisting of a 0.5 nm SiO2 covered with a high-K, 1.6 nm HfO2 with a metal gate. In the past, Coulomb scattering was assumed to arise from trapping centers located at the Si-SiO2 interface; however, this cannot give rise to a 1/f noise spectrum. We model remote Coulomb scattering into the dielectric film as traps in these films easily lie within a tunneling distance from the interface. This approach explains the decrease in the Coulomb scattering parameter (α) as a function of gate voltage. In addition, we introduce surface roughness scattering through fluctuations in the normal electric field due to fluctuations in the free carrier density with a surface scattering parameter (β) proportional to the SPICE surface roughness parameter, θS. Good agreement is obtained between our model and experimental results for both IDS-VGS and the power spectral density, SId, characteristics in very strong inversion region where surface quantization of the 2D subbands is strong.

  6. Structural and electrical characteristics of RF-sputtered HfO 2 high-k based MOS capacitors

    NASA Astrophysics Data System (ADS)

    Tirmali, P. M.; Khairnar, Anil G.; Joshi, Bhavana N.; Mahajan, A. M.

    2011-08-01

    The HfO 2 high-k thin films have been deposited on p-type (1 0 0) silicon wafer using RF magnetron sputtering technique. The XRD, AFM and Ellipsometric characterizations have been performed for crystal structure, surface morphology and thickness measurements respectively. The monoclinic structured, smooth surface HfO 2 thin films with 9.45 nm thickness have been used for Al/HfO 2/p-Si metal-oxide-semiconductor (MOS) structures fabrication. The fabricated Al/HfO2/Si structure have been used for extracting electrical properties viz dielectric constant, EOT, barrier height, doping concentration and interface trap density through capacitance voltage and current-voltage measurements. The dielectric constant, EOT, barrier height, effective charge carriers, interface trap density and leakage current density are determined are 22.47, 1.64 nm, 1.28 eV, 0.93 × 10 10, 9.25 × 10 11 cm -2 eV -1 and 9.12 × 10 -6 A/cm 2 respectively for annealed HfO 2 thin films.

  7. A high performance, visible to mid-infrared photodetector based on graphene nanoribbons passivated with HfO2

    NASA Astrophysics Data System (ADS)

    Yu, Xuechao; Dong, Zhaogang; Liu, Yanping; Liu, Tao; Tao, Jin; Zeng, Yongquan; Yang, Joel K. W.; Wang, Qi Jie

    2015-12-01

    Graphene has drawn tremendous attention as a promising candidate for electronic and optoelectronic applications owing to its extraordinary properties, such as broadband absorption and ultrahigh mobility. Nevertheless, the absence of a bandgap makes graphene unfavorable for digital electronic or photonic applications. Although patterning graphene into nanostructures with the quantum confinement effect is able to open a bandgap, devices based on these graphene nanostructures generally suffer from low carrier mobility and scattering losses. In this paper, we demonstrated that encapsulation of an atomic layer deposited high-quality HfO2 film will greatly enhance the carrier mobility and decrease the scattering losses of graphene nanoribbons, because this high-k dielectric layer weakens carrier coulombic interactions. In addition, a photodetector based on HfO2 layer capped graphene nanoribbons can cover broadband wavelengths from visible to mid-infrared at room temperature, exhibiting ~10 times higher responsivity than the one without a HfO2 layer in the visible regime and ~8 times higher responsivity in the mid-infrared regime. The method employed here could be potentially used as a general approach to improve the performance of graphene nanostructures for electronic and optoelectronic applications.Graphene has drawn tremendous attention as a promising candidate for electronic and optoelectronic applications owing to its extraordinary properties, such as broadband absorption and ultrahigh mobility. Nevertheless, the absence of a bandgap makes graphene unfavorable for digital electronic or photonic applications. Although patterning graphene into nanostructures with the quantum confinement effect is able to open a bandgap, devices based on these graphene nanostructures generally suffer from low carrier mobility and scattering losses. In this paper, we demonstrated that encapsulation of an atomic layer deposited high-quality HfO2 film will greatly enhance the carrier

  8. Influence of nitrogen-related defects on optical and electrical behaviour in HfO2-xNx deposited by high-power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Murdoch, B. J.; Ganesan, R.; McKenzie, D. R.; Bilek, M. M. M.; McCulloch, D. G.; Partridge, J. G.

    2015-09-01

    HfO2-xNx films have been deposited by high-power impulse magnetron sputtering in an Ar-O2-N2 atmosphere with a series of nitrogen partial pressures. X-ray absorption spectroscopy revealed the optimum deposition conditions required to passivate O vacancies in the HfO2-xNx films by nitrogen. Low-mobility interstitial species prevent crystallisation of nitrogen-incorporated films. These effects combine to remove leakage paths resulting in superior breakdown strengths compared to films deposited without nitrogen. The bandgap was maintained at ˜5.9 eV in the films in which nitrogen passivated the oxygen vacancies. This is essential to provide sufficient band offsets for HfO2-xNx films to be used an effective gate dielectric.

  9. Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

    NASA Astrophysics Data System (ADS)

    Prócel, L. M.; Trojman, L.; Moreno, J.; Crupi, F.; Maccaronio, V.; Degraeve, R.; Goux, L.; Simoen, E.

    2013-08-01

    The quantum point contact (QPC) model for dielectric breakdown is used to explain the electron transport mechanism in HfO2-based resistive random access memories (ReRAM) with TiN(30 nm)HfO2(5 nm)Hf(10 nm)TiN(30 nm) stacks. Based on experimental I-V characteristics of bipolar HfO2-based ReRAM, we extracted QPC model parameters related to the conduction mechanism in several devices in order to make a statistical study. In addition, we investigated the temperature effect on the conduction mechanism and compared it with the QPC model. Based on these experimental results, we show that the QPC model agrees well with the conduction behavior of HfO2-based ReRAM memory cells.

  10. Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ferrari, S.; Scarel, G.; Wiemer, C.; Fanciulli, M.

    2002-12-01

    Atomic layer deposition (ALD) growth of high-κ dielectric films (ZrO2 and HfO2) was performed using ZrCl4, HfCl4, and H2O as precursors. In this work, we use time of flight secondary ion mass spectrometry to investigate the chlorine distribution in ALD grown ZrO2 and HfO2 films, and its evolution during rapid thermal processes in nitrogen atmosphere. Chlorine outdiffusion is found to depend strongly upon annealing temperature and weakly upon the annealing time. While in ZrO2 chlorine concentration is significantly decreased already at 900 °C, in HfO2 it is extremely stable, even at temperatures as high as 1050 °C.

  11. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    PubMed

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  12. High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator

    NASA Astrophysics Data System (ADS)

    Kim, Young Mo; Park, Chulkwon; Kim, Useong; Ju, Chanjong; Char, Kookrin

    2016-01-01

    Thin-film transistors have been fabricated using La-doped BaSnO3 as n-type channels and (In,Sn)2O3 as source, drain, and gate electrodes. HfO2 was grown as gate insulators by atomic layer deposition. The field-effect mobility, Ion/Ioff ratio, and subthreshold swing of the device are 24.9 cm2 V-1 s-1, 6.0 × 106, and 0.42 V dec-1, respectively. The interface trap density, evaluated to be higher than 1013 cm-2 eV-1, was found to be slightly lower than that of the thin-film transistor with an Al2O3 gate insulator. We attribute the much smaller subthreshold swing values to the higher dielectric constant of HfO2.

  13. Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films.

    PubMed

    Ko, Chung-Ting; Yang, Po-Shuan; Han, Yin-Yi; Wang, Wei-Cheng; Huang, Jhih-Jie; Lee, Yen-Hui; Tsai, Yi-Jen; Shieh, Jay; Chen, Miin-Jang

    2015-07-01

    Plasmonic silver nanostructures and a precise ZnO cover layer prepared by capacitively coupled plasma atomic layer deposition (ALD) were exploited to enhance the Raman scattering from nanoscale ultrathin films on a Si substrate. The plasmonic activity was supported by a nanostructured Ag (nano-Ag) layer, and a ZnO cover layer was introduced upon the nano-Ag layer to spectrally tailor the localized surface plasmon resonance to coincide with the laser excitation wavelength. Because of the optimized dielectric environment provided by the precise growth of ZnO cover layer using ALD, the intensity of Raman scattering from nanoscale ultrathin films was significantly enhanced by an additional order of magnitude, leading to the observation of the monoclinic and tetragonal phases in the nanoscale ZrO2 high-K gate dielectric as thin as ∼6 nm on Si substrate. The excellent agreement between the finite-difference time-domain simulation and experimental measurement further confirms the so-called [absolute value]E(->)[absolute value](4) dependence of the surface-enhanced Raman scattering. This technique of plasmonic enhancement of Raman spectroscopy, assisted by the nano-Ag layer and optimized dielectric environment prepared by ALD, can be applied to characterize the structures of ultrathin films in a variety of nanoscale materials and devices, even on a Si substrate with overwhelming Raman background. PMID:26057412

  14. A high performance, visible to mid-infrared photodetector based on graphene nanoribbons passivated with HfO2.

    PubMed

    Yu, Xuechao; Dong, Zhaogang; Liu, Yanping; Liu, Tao; Tao, Jin; Zeng, Yongquan; Yang, Joel K W; Wang, Qi Jie

    2016-01-01

    Graphene has drawn tremendous attention as a promising candidate for electronic and optoelectronic applications owing to its extraordinary properties, such as broadband absorption and ultrahigh mobility. Nevertheless, the absence of a bandgap makes graphene unfavorable for digital electronic or photonic applications. Although patterning graphene into nanostructures with the quantum confinement effect is able to open a bandgap, devices based on these graphene nanostructures generally suffer from low carrier mobility and scattering losses. In this paper, we demonstrated that encapsulation of an atomic layer deposited high-quality HfO2 film will greatly enhance the carrier mobility and decrease the scattering losses of graphene nanoribbons, because this high-k dielectric layer weakens carrier coulombic interactions. In addition, a photodetector based on HfO2 layer capped graphene nanoribbons can cover broadband wavelengths from visible to mid-infrared at room temperature, exhibiting ∼10 times higher responsivity than the one without a HfO2 layer in the visible regime and ∼8 times higher responsivity in the mid-infrared regime. The method employed here could be potentially used as a general approach to improve the performance of graphene nanostructures for electronic and optoelectronic applications. PMID:26610363

  15. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of different stacks of films.

  16. Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

    PubMed

    Wang, Lin; Chen, Xiaolong; Wang, Yang; Wu, Zefei; Li, Wei; Han, Yu; Zhang, Mingwei; He, Yuheng; Zhu, Chao; Fung, Kwok Kwong; Wang, Ning

    2013-02-01

    We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y(2)O(3)-covered SLG and a very few short-range impurities have been introduced by Y(2)O(3). Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y(2)O(3) layers. PMID:23263255

  17. Ab initio calculation of relative permittivity of La-doped HfO2

    NASA Astrophysics Data System (ADS)

    Ong, T. M.; Xu, S.

    2014-12-01

    First principles calculations of HfO2 and La-doped HfO2 structures were carried out to investigate the effect of La doping on the relative permittivity of HfO2 films. In this study 6.25% of La was incorporated into HfO2. Upon examination, we found out that La addition increased the value of the relative permittivity from 19 to 26 and this was because the La-induced distortion increased the range of frequencies that contribute to the IR-active modes.

  18. Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

    PubMed Central

    Shim, Jiwook; Rivera, Jose; Bashir, Rashid

    2013-01-01

    We report the development of single, locally crystallized nanopores in HfO2 membranes for biosensing applications. HfO2 is chosen for its isoelectric point of 7.0, mechanical and chemical stability in solution, and for its potential as a high-k material for nanopore ionic field effect transistor applications. The HfO2 membrane is deposited on a graphene layer suspended over a 300 nm FIB hole, where graphene is used as the mechanical support. Exposure of the membrane to a focused electron beam causes crystallization in the vicinity of the nanopore during pore formation. We investigate the effects of crystallization on the electrical and surface properties of HfO2 films. Our surface analysis of HfO2 reveals improved hydrophilicity of crystallized HfO2, a notable advantage over the hydrophobicity of as-deposited HfO2. We also demonstrate detection of dsDNA translocation through HfO2 nanopores under various applied bias levels. In addition, our device architecture also presents a promising first step toward the realization of high-k HfO2 nanopore transistors. PMID:23945603

  19. Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

    NASA Astrophysics Data System (ADS)

    Zhao, Lianfeng; Tan, Zhen; Wang, Jing; Xu, Jun

    2014-01-01

    Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al2O3 and HfO2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial properties of the Al2O3 and HfO2 films are improved by ozone PDT. After in-situ ozone PDT for 5 min, the Al2O3 and HfO2 films on GaSb substrates exhibit improved electrical and interfacial properties, such as reduced frequency dispersion, gate leakage current, border traps and interface traps. Interface trap density is reduced by ∼24% for the Al2O3/GaSb stacks and ∼27% for the HfO2/GaSb stacks. In-situ ozone PDT is proved to be a promising technique in improving the quality of high-k gate stacks on GaSb substrates.

  20. Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators

    NASA Astrophysics Data System (ADS)

    Han, Jae-Hoon; Takenaka, Mitsuru; Takagi, Shinichi

    2016-04-01

    We have investigated the direct wafer bonding (DWB) method with a thin bonding dielectric interface to fabricate Si high-k MOS optical modulators with a thin equivalent oxide thickness (EOT). To suppress void generation on the bonded wafer during high-temperature annealing, we examined the high-k dielectric bonding interfacial layers, such as Al2O3 and HfO2. We found that the Al2O3/HfO2 bilayer enables void-less wafer bonding in conjunction with pre-bonding annealing at 700 °C. By using the 0.5-nm Al2O3/2.0-nm HfO2 bonding interface, the density of voids is reduced by three orders of magnitude as compared with that in the case of using the Al2O3 bonding interface. We achieved a density of voids of approximately 2 × 10-3 cm-2 even when the bonded wafer is annealed at 700 °C. By thermal desorption spectroscopy (TDS), we found that degassing from the bonding interface is successfully suppressed by the introduction of the HfO2 layer and the pre-bonding annealing at 700 °C, which are considered to suppress void generation. Wafer bonding with thin Al2O3/HfO2 high-k bonding interface is promising for Si high-k MOS optical modulators.

  1. Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-κ HfO2 LTPS-TFTs

    NASA Astrophysics Data System (ADS)

    Chang, Kow-Ming; Huang, Bo-Wen; Wu, Chien-Hung; Deng, I.-Chung; Chang, Ting-Chia; Lin, Sheng-Chia

    2015-09-01

    This study demonstrated the application of a dual plasma treatment to low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) comprising a self-aligned phosphorus implantation source and drain, high-κ HfO2 gate dielectric, and aluminum metal gate. The dual plasma treatment involves a pre-deposition CF4 plasma treatment at a high-κ/poly-Si interface and post-deposition N2 plasma treatment at a high-κ HfO2 gate dielectric; this treatment enables reducing the interface-trap-state defects at the high-κ/poly-Si interface, grain boundary traps in the poly-Si channel film, and oxygen vacancy Vo in the high-κ HfO2 gate dielectric. Thus, LTPS-TFTs with dual plasma treatment demonstrate excellent electrical characteristics such as threshold voltage, subthreshold swing, transconductance, driving current, and on/off current ratio. Flicker noise, also referred to as 1/f noise, caused by fluctuations of carriers transported in the grain boundary and the trapped carriers per unit oxide volume (Nt) can be suppressed. Therefore, high performance LTPS-TFTs subjected to dual plasma treatment can be appropriately applied to active matrix liquid phase-crystal display on system-on-panel technology.

  2. Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

    NASA Astrophysics Data System (ADS)

    Cheol Shin, Woo; Yong Kim, Taek; Sul, Onejae; Jin Cho, Byung

    2012-07-01

    We demonstrate that ultrathin poly(4-vinylphenol) (PVP) acts as an effective organic seeding layer for atomic layer deposition (ALD) of high-k dielectric on large-scale graphene fabricated by chemical vapor deposition (CVD). While identical ALD conditions result in incomplete and rough dielectric deposition on CVD graphene, the reactive groups provided by the PVP seeding layer yield conformal and pinhole-free dielectric films throughout the large-scale graphene. Top-gate graphene field effect transistors fabricated with the high quality, PVP-seeded Al2O3 gate dielectric show superior carrier mobility and enhanced reliability performance, which are desirable for graphene nanoelectronics.

  3. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  4. Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials

    NASA Astrophysics Data System (ADS)

    Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav

    2016-01-01

    Electron mobility is investigated in sub-20 nm-thick InGaAs channels, sandwiched between different gate oxides (SiO2, Al2O3, HfO2) and InP as substrate, using physics-based numerical modeling. Effects of body thickness downscaling to 2 nm, different gate oxides, and surface orientation [(1 0 0) and (1 1 1)] are examined by including all electron valleys and all relevant scattering mechanisms. We report that ultra-thin (1 1 1) Al2O3-InGaAs-InP devices offer greater electron mobility than (1 0 0) devices even in the extremely-thin channels. Furthermore, ultra-thin (1 0 0) InGaAs devices outperform SOI in terms of electron mobility for body thicknesses above ∼4 nm, while (1 1 1) InGaAs channels are superior to SOI for all body thickness values above ∼3 nm. The study of different gate oxides indicates that HfO2 is the optimum gate dielectric regardless of device orientation, offering a mobility improvement of up to 124% for (1 1 1) and 149% for (1 0 0) surface orientation, when compared to the initial Al2O3-InGaAs-InP structure. The (1 1 1) orientation offers improvement over (1 0 0) device irrespective of the body thickness and gate oxide material, with the highest difference reported for SiO2, followed by Al2O3 and HfO2.

  5. Room temperature interactions of water vapor with HfO2 films on Si

    NASA Astrophysics Data System (ADS)

    Driemeier, C.; Gusev, E. P.; Baumvol, I. J. R.

    2006-05-01

    HfO2/SiO2/Si(001) thin film structures were exposed at room temperature to water vapor isotopically enriched in H2 and O18 followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed (i) the formation of strongly bonded hydroxyls at the HfO2 surface; (ii) room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; (iii) hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.

  6. Spectroscopic analysis of Al and N diffusion in HfO2

    NASA Astrophysics Data System (ADS)

    Lysaght, P. S.; Woicik, J. C.; Sahiner, M. A.; Price, J.; Weiland, C.; Kirsch, P. D.

    2012-09-01

    X-ray photoelectron core level spectroscopy, secondary ion mass spectroscopy, spectroscopic ellipsometry, and extended x-ray absorption fine structure measurements have been employed to distinguish the effects of Al and N diffusion on the local bonding and microstructure of HfO2 and its interface with the Si substrate in (001)Si/SiOx/2 nm HfO2/1 nm AlOx film structures. The diffusion of Al from the thin AlOx cap layer deposited on both annealed and unannealed HfO2 has been observed following anneal in N2 and NH3 ambient. Both N2 and NH3 subsequent anneals were performed to decouple incorporated nitrogen from thermal reactions alone. Causal variations in the HfO2 microstructure combined with the dependence of Al and N diffusion on initial HfO2 conditions are presented with respect to anneal temperature and ambient.

  7. Optimizing HiPIMS pressure for deposition of high-k (k = 18.3) amorphous HfO2

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Murdoch, B. J.; Partridge, J. G.; Bathgate, S.; Treverrow, B.; Dong, X.; Ross, A. E.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-03-01

    Stoichiometric amorphous HfO2 films have been deposited by reactive High Power Impulse Magnetron Sputtering (HiPIMS) from a Hf target in a 1:1 Ar:O2 atmosphere at pressures 2-4.5 mTorr. An optimum pressure was found for depositing smooth, high refractive index and amorphous films. Stress and refractive index reached a maximum as deposition pressure was increased to 3.5 mTorr. At 3.5 mTorr, HfO2 films were deposited with a refractive index of 2.15 at 500 nm, low leakage currents, moderate fixed charge density and a high dielectric constant of ∼18.3. The intensification of energetic ion bombardment upon the film with increase in HiPIMS pressure plays a dominant role in film properties. Increase in pressure above the optimum relieved the stress in the films and degraded the optical and electrical properties. HiPIMS pressure enables to gain indirect control of ion flux and energy in the plasma and can be used to modify the properties of depositing films.

  8. Photocurrent generation in carbon nanotube/cubic-phase HfO2 nanoparticle hybrid nanocomposites

    PubMed Central

    Galeckas, Augustinas; Salumaa, Martin; Ducroquet, Frédérique; Rauwel, Erwan

    2016-01-01

    Summary A hybrid material consisting of nonfunctionalized multiwall carbon nanotubes (MWCNTs) and cubic-phase HfO2 nanoparticles (NPs) with an average diameter of 2.6 nm has been synthesized. Free standing HfO2 NPs present unusual optical properties and a strong photoluminescence emission in the visible region, originating from surface defects. Transmission electron microscopy studies show that these NPs decorate the MWCNTs on topological defect sites. The electronic structure of the C K-edge in the nanocomposites was probed by electron energy loss spectroscopy, highlighting the key role of the MWCNT growth defects in anchoring HfO2 NPs. A combined optical emission and absorption spectroscopy approach illustrated that, in contrast to HfO2 NPs, the metallic MWCNTs do not emit light but instead expose their discrete electronic structure in the absorption spectra. The hybrid material manifests characteristic absorption features with a gradual merger of the MWCNT π-plasmon resonance band with the intrinsic defect band and fundamental edge of HfO2. The photoluminescence of the nanocomposites indicates features attributed to combined effects of charge desaturation of HfO2 surface states and charge transfer to the MWCNTs with an overall reduction of radiative recombination. Finally, photocurrent generation under UV–vis illumination suggests that a HfO2 NP/MWCNT hybrid system can be used as a flexible nanodevice for light harvesting applications. PMID:27547626

  9. Photocurrent generation in carbon nanotube/cubic-phase HfO2 nanoparticle hybrid nanocomposites.

    PubMed

    Rauwel, Protima; Galeckas, Augustinas; Salumaa, Martin; Ducroquet, Frédérique; Rauwel, Erwan

    2016-01-01

    A hybrid material consisting of nonfunctionalized multiwall carbon nanotubes (MWCNTs) and cubic-phase HfO2 nanoparticles (NPs) with an average diameter of 2.6 nm has been synthesized. Free standing HfO2 NPs present unusual optical properties and a strong photoluminescence emission in the visible region, originating from surface defects. Transmission electron microscopy studies show that these NPs decorate the MWCNTs on topological defect sites. The electronic structure of the C K-edge in the nanocomposites was probed by electron energy loss spectroscopy, highlighting the key role of the MWCNT growth defects in anchoring HfO2 NPs. A combined optical emission and absorption spectroscopy approach illustrated that, in contrast to HfO2 NPs, the metallic MWCNTs do not emit light but instead expose their discrete electronic structure in the absorption spectra. The hybrid material manifests characteristic absorption features with a gradual merger of the MWCNT π-plasmon resonance band with the intrinsic defect band and fundamental edge of HfO2. The photoluminescence of the nanocomposites indicates features attributed to combined effects of charge desaturation of HfO2 surface states and charge transfer to the MWCNTs with an overall reduction of radiative recombination. Finally, photocurrent generation under UV-vis illumination suggests that a HfO2 NP/MWCNT hybrid system can be used as a flexible nanodevice for light harvesting applications. PMID:27547626

  10. Mechanical properties of low- and high-k dielectric thin films: A surface Brillouin light scattering study

    NASA Astrophysics Data System (ADS)

    Zizka, J.; King, S.; Every, A. G.; Sooryakumar, R.

    2016-04-01

    Surface Brillouin light scattering measurements are used to determine the elastic constants of nano-porous low-k SiOC:H (165 nm) and high-k HfO2 (25 nm) as well as BN:H (100 nm) films grown on Si substrates. In addition, the study investigates the mechanical properties of ultra-thin (25 nm) blanket TiN cap layers often used as hard masks for patterning, and their effects on the underlying low-k dielectrics that support a high level of interconnected porosity. Depending on the relative material properties of individual component layers, the acoustic modes manifest as confined, propagating, or damped resonances in the light scattering spectra, thereby enabling the mechanical properties of the ultra-thin films to be determined.

  11. Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Dimoulas, A.; Vellianitis, G.; Mavrou, G.; Evangelou, E. K.; Sotiropoulos, A.

    2005-05-01

    Germanium metal-insulator-semiconductor capacitors with HfO2 or other high-κ gate dielectrics show unusual low frequency behavior of the high frequency (1 kHz or higher) capacitance-voltage characteristics when biased in inversion. Here, we provide evidence that this effect is partly due to the high intrinsic carrier concentration ni in Ge. We show in particular that the ac conductance in inversion is thermally activated and it is governed either by generation-recombination processes in depletion, varying proportional to ni or by diffusion-limited processes varying as ni2, depending on whether the temperature is below or above 45 °C, respectively. From these measurements, we also show that the minority carrier response time in Ge is very short, in the microsecond range (much shorter than in Si), depending inversely proportional to ni at room temperature. This means that due to high ni, the inversion charge is built fast in response to high frequency signals at the gate, inducing the observed low frequency behavior.

  12. Temperature dependent structural, optical and hydrophobic properties of sputtered deposited HfO2 films

    NASA Astrophysics Data System (ADS)

    Dave, V.; Dubey, P.; Gupta, H. O.; Chandra, R.

    2014-01-01

    Hafnium oxide being high-k dielectric has been successfully utilized in electronic and optical applications. Being thermodynamically stable and having good mechanical strength, it can be used as a protective coating for outdoor HV insulators which are suffering from surface flashover problem due to contamination. In this paper, we are investigating the effect of substrate temperature on structural, optical and hydrophobic properties of hafnium oxide coating deposited over glass insulators by DC magnetron sputtering. X-ray diffraction is applied to determine the crystalline phase and crystallite size of the film. The morphology of the samples is examined using atomic force microscopy. The optical properties are studied using UV-vis-NIR spectrophotometer. The wettability of the film is investigated using contact angle meter. The thickness is measured using surface profilometer and verified through optical data. The relationship between substrate temperature with grain size, roughness, refractive index, and hydrophobicity is manifested. The maximum contact angle for HfO2 film was found to be 106° at 400°C.

  13. Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

    SciTech Connect

    Zheng, Shan; Yang, Wen; Sun, Qing-Qing E-mail: linchen@fudan.edu.cn; Zhou, Peng; Wang, Peng-Fei; Wei Zhang, David; Chen, Lin; Xiao, Fei

    2013-12-23

    Fermi level pinning at metal/n-InP interface and effective Schottky barrier height (Φ{sub B,eff}) were optimized by inserting ultrathin dielectrics in this work. Comparing the inserted monolayer and bilayer high-k dielectrics, we demonstrated that the introduction of bilayer dielectrics can further reduce Φ{sub B,eff} (from 0.49 eV to 0.22 eV) than the monolayer dielectric (from 0.49 eV to 0.32 eV) even though the overall dielectric thickness was thicker. The additional dipole formed at high-k/high-k interfaces could be used to expound the mechanism. This work proposed an effective solution to reduce resistance contacts for InP based transistors and Schottky barrier transistors.

  14. Properties of Ultrathin Al2O3-TiO2 Nanolaminate Films for Gate Dielectric Applications Deposited by Plasma-Assisted Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Garces, Nelson; Meyer, David; Nepal, Neeraj; Wheeler, Virginia; Eddy, Charles

    2012-02-01

    High permittivity dielectrics such as Al2O3, HfO2, Ta2O5, TiO2, etc., are an essential component of aggressively-scaled III-V and graphene field effect transistors (FETs) where insulators are necessary to reduce gate leakage current while maintaining high gate capacitance and charge control of the channel. Atomic layer deposition (ALD) has the capability to deposit hybrid films, or nanolaminates, of two or more dielectrics that have unique properties. Thin [Al2O3+TiO2] nanolaminates with varying TiO2 and Al2O3 content were deposited on n-Si substrates at ˜225-300 C using ALD. A nanolaminate is composed of bilayers, defined as the sum of (x)Al2O3 and (y)TiO2, where x, and y indicate the number of times a component monolayer is repeated. While the overall thickness of the dielectric was held at ˜ 17-20 nm, the relative ratio of Al2O3 to TiO2 in the bilayer stack was varied to evaluate changes in the material properties and electrical performance of the oxides. C-V and I-V measurements on various [(x)TiO2+(y)Al2O3] MOS capacitors were taken. The high-TiO2-content films show limited evidence of oxide charge trapping and relatively large dielectric constants (κ˜15), whereas the high-Al2O3-content films offer a larger optical bandgap and improved suppression of leakage current. We will discuss the properties of very thin nanolaminates and their possible use as gate oxides. Morphological, electrical, and XPS composition assessments will be presented.

  15. Electronic Structure Differences in ZrO2 vs. HfO2

    SciTech Connect

    Zheng, Weijun; Bowen Jr., K.H.; Li, Jun; Dabkowska, Iwona; Gutowski, Maciej S.

    2005-12-22

    While ZrO2 and HfO2 are, for the most part, quite similar chemically, subtle differences in their electronic structures appear to be responsible for differing MO2/Si (M = Zr, Hf) interface stabilities. In order to shed light on the electronic structure differences between ZrO2 and HfO2, we have conducted joint experimental/theoretical studies. Since electron affinities are a sensitive probe of electronic structure, we have measured them by conducting photoelectron spectroscopic experiments on ZrO2- and HfO2-. The electron affinity of HfO2 was determined to be 2.14? 0.03 eV, while that of ZrO2 was determined to be 1.64 ? 0.03 eV. Concurrently, electronic structure calculations were conducted to determine electron affinities, vibrational frequencies, and geometries of these systems. The calculated electron affinities of HfO2 and ZrO2 were found to be 2.05 and 1.62 eV, respectively. The molecular results confirm earlier predictions from solid phases that HfO2 is more ionic than ZrO2. The excess electron in MO2- occupies an sd-type hybrid orbital localized on the M atom (M=Zr, Hf). The structural parameters of ZrO2 and HfO2 were found to be very similar. The difference in geometries between the neutral and the anion is along the symmetrical stretching and bending modes. Together, these studies unveil significant differences in the electronic structures of ZrO2 and HfO2.

  16. MoS2 on an amorphous HfO2 surface: An ab initio investigation

    NASA Astrophysics Data System (ADS)

    Scopel, W. L.; Miwa, R. H.; Schmidt, T. M.; Venezuela, P.

    2015-05-01

    The energetic stability, electronic and structural properties of MoS2 adsorbed on an amorphous a-HfO2 surface (MoS2/HfO2) are examined through ab initio theoretical investigations. Our total energy results indicate that the formation of MoS2/HfO2 is an exothermic process with an adsorption energy of 34 meV/Å2, which means that it is more stable than similar systems like graphene/HfO2 and MoS2/SiO2. There are no chemical bonds at the MoS2-HfO2 interface. Upon formation of MoS2/HfO2, the electronic charge distribution is mostly localized at the interface region with no net charge transfer between the adsorbed MoS2 sheet and -HfO2 surface. However, the MoS2 sheet becomes n-type doped when there are oxygen vacancies in the HfO2 surface. Further investigation of the electronic distribution reveals that there are no electron- and hole-rich regions (electron-hole puddles) on the MoS2 sheet, which makes this system promising for use in high-speed nanoelectronic devices.

  17. Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays.

    PubMed

    Lee, Won-June; Park, Won-Tae; Park, Sungjun; Sung, Sujin; Noh, Yong-Young; Yoon, Myung-Han

    2015-09-01

    Ultrathin and dense metal oxide gate di-electric layers are reported by a simple printing of AlOx and HfOx sol-gel precursors. Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm(2) V(-1) s(-1) and gate leakage current of 10(-9) A cm(-2) at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes. PMID:26222338

  18. First-principles study of dielectric properties of bulk NaCl and ultrathin NaCl films under a finite external electric field

    NASA Astrophysics Data System (ADS)

    Ono, Tomoya; Hirose, Kikuji

    2005-08-01

    We present a first-principles study of the dielectric properties of a NaCl crystal and ultrathin NaCl films under a finite external electric field. Our results show that the high-frequency dielectric constant of the films is less affected by the finite-size effect from crystal surfaces and is close to that of the crystal, whereas the static one is sensitive to the thickness of the film because of the thick buffer region where ionic displacements due to the electric field are not as homogeneous as those in the bulk.

  19. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules. PMID:26376087

  20. High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer☆

    PubMed Central

    Petritz, Andreas; Wolfberger, Archim; Fian, Alexander; Krenn, Joachim R.; Griesser, Thomas; Stadlober, Barbara

    2013-01-01

    A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25–48 nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) is patterned directly by UV-exposure (λ = 254 nm) at a dose typical for conventionally used negative photoresists without the need for any additional photoinitiator. The polymer itself undergoes a photo-Fries rearrangement reaction under UV illumination, which is accompanied by a selective cross-linking of the macromolecules, leading to a change in solubility in organic solvents. This crosslinking reaction and the negative photoresist behavior are investigated by means of sol–gel analysis. The resulting transistors show a field-effect mobility up to 0.8 cm2 V−1 s−1 at an operation voltage as low as −4.5 V. The ultra-low subthreshold swing in the order of 0.1 V dec−1 as well as the completely hysteresis-free transistor characteristics are indicating a very low interface trap density. It can be shown that the device performance is completely stable upon UV-irradiation and development according to a very robust chemical rearrangement. The excellent interface properties, the high stability and the small thickness make the PNDPE gate dielectric a promising candidate for fast organic electronic circuits. PMID:24748853

  1. Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

    NASA Astrophysics Data System (ADS)

    Green, M. L.; Gusev, E. P.; Degraeve, R.; Garfunkel, E. L.

    2001-09-01

    The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal-oxide-semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices will be manufactured with SiO2 and Si-O-N for the foreseeable future, continued scaling of integrated circuit devices, essentially the continued adherence to Moore's law, will necessitate the introduction of an alternate gate dielectric once the SiO2 gate dielectric thickness approaches ˜1.2 nm. It is hoped that this article will prove useful to members of the silicon microelectronics community, newcomers to the gate dielectrics field, practitioners in allied fields, and graduate students. Parts of this article have been adapted from earlier articles by the authors [L. Feldman, E. P. Gusev, and E. Garfunkel, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' (Kluwer, Dordrecht, 1998), p. 1 [Ref. 1]; E. P. Gusev, H. C. Lu, E. Garfunkel, T. Gustafsson, and M. Green, IBM J. Res. Dev. 43, 265 (1999) [Ref. 2]; R. Degraeve, B. Kaczer, and G. Groeseneken, Microelectron. Reliab. 39, 1445 (1999) [Ref. 3].

  2. Light Coupling and Trapping in Ultrathin Cu(In,Ga)Se2 Solar Cells Using Dielectric Scattering Patterns.

    PubMed

    van Lare, Claire; Yin, Guanchao; Polman, Albert; Schmid, Martina

    2015-10-27

    We experimentally demonstrate photocurrent enhancement in ultrathin Cu(In,Ga)Se2 (CIGSe) solar cells with absorber layers of 460 nm by nanoscale dielectric light scattering patterns printed by substrate conformal imprint lithography. We show that patterning the front side of the device with TiO2 nanoparticle arrays results in a small photocurrent enhancement in almost the entire 400-1200 nm spectral range due to enhanced light coupling into the cell. Three-dimensional finite-difference time-domain simulations are in good agreement with external quantum efficiency measurements. Patterning the Mo/CIGSe back interface using SiO2 nanoparticles leads to strongly enhanced light trapping, increasing the efficiency from 11.1% for a flat to 12.3% for a patterned cell. Simulations show that optimizing the array geometry could further improve light trapping. Including nanoparticles at the Mo/CIGSe interface leads to substantially reduced parasitic absorption in the Mo back contact. Parasitic absorption in the back contact can be further reduced by fabricating CIGSe cells on top of a SiO2-patterned In2O3:Sn (ITO) back contact. Simulations show that these semitransparent cells have similar spectrally averaged reflection and absorption in the CIGSe active layer as a Mo-based patterned cell, demonstrating that the absorption losses in the Mo can be partially turned into transmission through the semitransparent geometry. PMID:26348324

  3. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    NASA Astrophysics Data System (ADS)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V‑1 sec‑1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  4. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

    PubMed

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-01-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm(2) V(-1) sec(-)1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 10(4)), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

  5. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    PubMed Central

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-01-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

  6. UV-assisted room-temperature gas sensing by HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Karaduman, Irmak; Barin, Özlem; Acar, Selim

    2016-06-01

    This research paper presents a detailed study of the influence of annealing temperature and UV irradiation on the sensitivity to NO2 of HfO2 thin films that can be used for the development of metal-oxide gas sensors. The HfO2 thin films were grown with a 3.3-nm thickness by using atomic layer deposition (ALD) and were annealed at different temperatures. The HfO2 thin films were characterized by using an atomic force microscope (AFM). The roughnesses of thin films were seen to have been affected by the annealing treatment. The effects of annealing temperature, as well as the operating temperature, on the response and the recovery characteristics of the HfO2 film were investigated. The results showed that both the annealing temperature and the operating temperature had significant effects on the sensing characteristics. Also, at room-temperature operation, the sensitivity of HfO2 thin films to 5 ppm of NO2 gas in air was investigated under UV irradiation. UV irradiation not only increased the response but also reduced the response and the recovery times during the gas-sensing measurements.

  7. Molecular dynamics simulation of amorphous HfO2 for resistive RAM applications

    NASA Astrophysics Data System (ADS)

    Broglia, G.; Ori, G.; Larcher, L.; Montorsi, M.

    2014-09-01

    HfO2 is widely investigated as the favoured material for resistive RAM device implementation. The structural features of HfO2 play a fundamental role in the switching mechanisms governing resistive RAM operations, and a comprehensive understanding of the relation between the atomistic properties and final device behaviour is still missing. In addition, despite the fact that ultra-scaled 10 nm resistive RAM will probably be made of amorphous HfO2, a deeper investigation of the structure is necessary. In this paper, the classical molecular dynamics technique was used to investigate the disordered atomic configuration of amorphous HfO2. The influence of density on both the atomistic structure and the diffusion of O species was carefully analysed. The results achieved show that the atomistic structure of an amorphous HfO2 system is strongly affected by the density, and the amorphous system is rearranged in an atomic configuration similar to the crystalline configuration at similar densities. The diffusion of oxygen atoms increases with the decrease of the density, consistent with a less-packed atomic structure which allows for easier movement of this species.

  8. Mixed Al and Si doping in ferroelectric HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu

    2015-12-01

    Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ˜20 μC/cm2 and a coercive field strength of ˜1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

  9. Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Khairnar, A. G.; Mahajan, A. M.

    2013-01-01

    Structural and electrical properties of HfO2 gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering are investigated. The HfO2 high-k thin films have been deposited on p-type <100> silicon wafer using RF-Magnetron sputtering technique. The Ellipsometric, FTIR and AFM characterizations have been done. The thickness of the as deposited film is measured to be 35.38 nm. Post deposition annealing in N2 ambient is carried out at 350, 550, 750 °C. The chemical bonding and surface morphology of the film is verified using FTIR and AFM respectively. The structural characterization confirmed that the thin film was free of physical defects and root mean square surface roughness decreased as the annealing temperature increased. The smooth surface HfO2 thin films were used for Al/HfO2/p-Si MOS structures fabrication. The fabricated Al/HfO2/p-Si structure had been used for extracting electrical properties such as dielectric constant, EOT, interface trap density and leakage current density through capacitance voltage and current voltage measurements. The interface state density extracted from the G-V measurement using Hill Coleman method. Sample annealed at 750 °C showed the lowest interface trap density (3.48 × 1011 eV-1 cm-2), effective oxide charge (1.33 × 1012 cm-2) and low leakage current density (3.39 × 10-9 A cm-2) at 1.5 V.

  10. Deposition of HfO2 on germanium and the impact of surface pretreatments

    NASA Astrophysics Data System (ADS)

    Van Elshocht, S.; Brijs, B.; Caymax, M.; Conard, T.; Chiarella, T.; De Gendt, S.; De Jaeger, B.; Kubicek, S.; Meuris, M.; Onsia, B.; Richard, O.; Teerlinck, I.; Van Steenbergen, J.; Zhao, C.; Heyns, M.

    2004-10-01

    The deposition behavior of HfO2 by metalorganic chemical vapor deposition on germanium has been investigated. HfO2 films can be deposited on Ge with equally good quality as compared to high-k growth on silicon. Surface preparation is very important: compared to an HF-last, NH3 pretreatments result in smoother films with strongly reduced diffusion of germanium in the HfO2 film, resulting in a much better electrical performance. We clearly show that much thinner interfacial layers can be obtained, approximately half the thickness of what is typically found for depositions on silicon, suggesting the possibility of more aggressive equivalent oxide thickness/leakage scaling.

  11. Memristor and selector devices fabricated from HfO2-xNx

    NASA Astrophysics Data System (ADS)

    Murdoch, B. J.; McCulloch, D. G.; Ganesan, R.; McKenzie, D. R.; Bilek, M. M. M.; Partridge, J. G.

    2016-04-01

    Monoclinic HfO2-xNx has been incorporated into two-terminal devices exhibiting either memristor or selector operation depending on the controlled inclusion/suppression of mobile oxygen vacancies. In HfO2 memristors containing oxygen vacancies, gradual conductance modulation, short-term plasticity, and long-term potentiation were observed using appropriate voltage-spike stimulation, suggesting suitability for artificial neural networks. Passivation of oxygen vacancies, confirmed by X-ray absorption spectroscopy, was achieved in HfO2-xNx films by the addition of nitrogen during growth. Selector devices formed on these films exhibited threshold switching and current controlled negative differential resistance consistent with thermally driven insulator to metal transitions.

  12. Intrinsic electron traps in atomic-layer deposited HfO2 insulators

    NASA Astrophysics Data System (ADS)

    Cerbu, F.; Madia, O.; Andreev, D. V.; Fadida, S.; Eizenberg, M.; Breuil, L.; Lisoni, J. G.; Kittl, J. A.; Strand, J.; Shluger, A. L.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A.

    2016-05-01

    Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around Et ≈ 2.0 eV and Et ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO2 layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO2, suggesting that alternative defect models should be considered.

  13. HfO2 nanocrystal memory on SiGe channel

    NASA Astrophysics Data System (ADS)

    Lin, Yu-Hsien; Chien, Chao-Hsin

    2013-02-01

    This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance.

  14. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O 3/HfO 2 tunnel oxide.

    PubMed

    El-Atab, Nazek; Turgut, Berk Berkan; Okyay, Ali K; Nayfeh, Munir; Nayfeh, Ammar

    2015-12-01

    In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at the same operating voltages, enhanced retention, and endurance characteristics. The measurements are further confirmed by plotting the energy band diagram of the structures, calculating the quantum tunneling probabilities, and analyzing the charge transport mechanism. Also, the required program time of the memory with ultra-thin asymmetric Al2O3/HfO2 tunnel oxide with graphene nanoplatelets storage layer is calculated under Fowler-Nordheim tunneling regime and found to be 4.1 ns making it the fastest fully programmed MOS memory due to the observed pure electrons storage in the graphene nanoplatelets. With Si nanoparticles, however, the program time is larger due to the mixed charge storage. The results confirm that band-engineering of both tunnel oxide and charge trapping layer is required to enhance the current non-volatile memory characteristics. PMID:26055483

  15. Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Thamankar, R.; Raghavan, N.; Molina, J.; Puglisi, F. M.; O'Shea, S. J.; Shubhakar, K.; Larcher, L.; Pavan, P.; Padovani, A.; Pey, K. L.

    2016-02-01

    Random telegraph noise (RTN) measurements are typically carried out at the device level using standard probe station based electrical characterization setup, where the measured current represents a cumulative effect of the simultaneous response of electron capture/emission events at multiple oxygen vacancy defect (trap) sites. To better characterize the individual defects in the high-κ dielectric thin film, we propose and demonstrate here the measurement and analysis of RTN at the nanoscale using a room temperature scanning tunneling microscope setup, with an effective area of interaction of the probe tip that is as small as 10 nm in diameter. Two-level and multi-level RTN signals due to single and multiple defect locations (possibly dispersed in space and energy) are observed on 4 nm HfO2 thin films deposited on n-Si (100) substrate. The RTN signals are statistically analyzed using the Factorial Hidden Markov Model technique to decode the noise contribution of more than one defect (if any) and estimate the statistical parameters of each RTN signal (i.e., amplitude of fluctuation, capture and emission time constants). Observation of RTN at the nanoscale presents a new opportunity for studies on defect chemistry, single-defect kinetics and their stochastics in thin film dielectric materials. This method allows us to characterize the fast traps with time constants ranging in the millisecond to tens of seconds range.

  16. Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

    NASA Astrophysics Data System (ADS)

    Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-08-01

    We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance–voltage and polarization–voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

  17. Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

    NASA Astrophysics Data System (ADS)

    Khan, S.; Yogeswaran, N.; Taube, W.; Lorenzelli, L.; Dahiya, R.

    2015-12-01

    This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm2 V-1 s-1. The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates.

  18. Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities

    PubMed Central

    Jiang, Ran; Du, Xianghao; Sun, Weideng; Han, Zuyin; Wu, Zhengran

    2015-01-01

    With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect. PMID:26503804

  19. Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities.

    PubMed

    Jiang, Ran; Du, Xianghao; Sun, Weideng; Han, Zuyin; Wu, Zhengran

    2015-01-01

    With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect. PMID:26503804

  20. Origin of Indium Diffusion in High-k Oxide HfO2.

    PubMed

    Hu, Yaoqiao; Wang, Changhong; Dong, Hong; Wallace, Robert M; Cho, Kyeongjae; Wang, Wei-Hua; Wang, Weichao

    2016-03-23

    Indium (In) out-diffusion through high-k oxides severely undermines the thermal reliability of the next generation device of III-V/high-k based metal oxide semiconductor (MOS). To date, the microscopic mechanism of In diffusion is not yet fully understood. Here, we utilize angle resolved X-ray photoelectron spectroscopy (ARXPS) and density functional theory (DFT) to explore In diffusion in high-k oxide HfO2. Our ARXPS results confirm the In diffusion through as-prepared and annealed HfO2 grown on InP substrate. The theoretical results show that the In diffusion barrier is reduced to ∼0.88 eV in the presence of oxygen vacancies (VO), whereas this barrier is as high as ∼4.78 eV in pristine HfO2. Fundamentally, we found that the high feasibility of In diffusion is owing to In nonbonding with its neighboring atoms. These findings can be extended to understand the In diffusion in other materials in addition to HfO2. PMID:26939534

  1. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    NASA Technical Reports Server (NTRS)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  2. Thermal Conductivity and Water Vapor Stability of HfO2-based Ceramic Coating Materials

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2- 15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermaVenvironmenta1 barrier coating applications will also be discussed.

  3. Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors.

    PubMed

    Lee, Yunseong; Jeon, Woojin; Cho, Yeonchoo; Lee, Min-Hyun; Jeong, Seong-Jun; Park, Jongsun; Park, Seongjun

    2016-07-26

    We introduce a reliable and robust gate dielectric material with tunable dielectric constants based on a mesostructured HfxAlyO2 film. The ultrathin mesostructured HfxAlyO2 film is deposited on graphene via a physisorbed-precursor-assisted atomic layer deposition process and consists of an intermediate state with small crystallized parts in an amorphous matrix. Crystal phase engineering using Al dopant is employed to achieve HfO2 phase transitions, which produce the crystallized part of the mesostructured HfxAlyO2 film. The effects of various Al doping concentrations are examined, and an enhanced dielectric constant of ∼25 is obtained. Further, the leakage current is suppressed (∼10(-8) A/cm(2)) and the dielectric breakdown properties are enhanced (breakdown field: ∼7 MV/cm) by the partially remaining amorphous matrix. We believe that this contribution is theoretically and practically relevant because excellent gate dielectric performance is obtained. In addition, an array of top-gated metal-insulator-graphene field-effect transistors is fabricated on a 6 in. wafer, yielding a capacitance equivalent oxide thickness of less than 1 nm (0.78 nm). This low capacitance equivalent oxide thickness has important implications for the incorporation of graphene into high-performance silicon-based nanoelectronics. PMID:27355098

  4. Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers.

    PubMed

    Alaboson, Justice M P; Wang, Qing Hua; Emery, Jonathan D; Lipson, Albert L; Bedzyk, Michael J; Elam, Jeffrey W; Pellin, Michael J; Hersam, Mark C

    2011-06-28

    The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO(2) and Al(2)O(3) on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al(2)O(3) and 10 nm HfO(2) dielectric stack show high capacitance values of ∼700 nF/cm(2) and low leakage currents of ∼5 × 10(-9) A/cm(2) at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics. PMID:21553842

  5. Study of HfO2 films deposited on strained Si1-xGex layers by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Damlencourt, J.-F.; Weber, O.; Renault, O.; Hartmann, J.-M.; Poggi, C.; Ducroquet, F.; Billon, T.

    2004-11-01

    This paper focuses on the growth of HfO2 by atomic layer deposition (ALD) at 350°C on pseudomorphic Si1-xGex thin films (x =15% and 25%). Two different Si1-xGex surface preparations (chemical oxidation and HF "last" treatment) have been investigated to obtain the highest HfO2 film quality with the thinnest interfacial layer possible. The initial stages of the ALD growth on these different surfaces (i.e., hafnium adsorption and chlorine contamination) analyzed by total x-ray fluorescence show that HF last treated Si1-xGex surfaces are more convenient than chemically oxidized ones to grow high quality HfO2 layers. This result is confirmed by x-ray photoelectron spectroscopy investigations of the interfacial layer structure as a function of the surface treatment. As-deposited and annealed thin HfO2 layers (2.5, 3.5, 5, and 8nm) grown on HF last treated Si0.75Ge0.25 strained layers were analyzed by mercury probe. An equivalent oxide thickness as low as 0.7nm was obtained for a 2.5nm as-deposited HfO2 film. Mobility results show that a 22% mobility enhancement is obtained in the entire effective field range with HfO2/SiGe compared to the HfO2/Si reference.

  6. Post-Cleaning Effect on a HfO2 Gate Stack Using a NF3/NH3 Plasma.

    PubMed

    Lee, Min-Seon; Oh, Hoon-Jung; Lee, Joo-Hee; Lee, In-Geun; Shin, Woo-Gon; Kim, Kyu-Dong; Park, Jin-Gu; Ko, Dae-Hong

    2016-05-01

    The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics. PMID:27483826

  7. Thermodynamic mixing properties of the UO2-HfO2 solid solution: Density functional theory and Monte Carlo simulations

    NASA Astrophysics Data System (ADS)

    Yuan, Ke; Ewing, Rodney C.; Becker, Udo

    2015-03-01

    HfO2 is a neutron absorber and has been mechanically mixed with UO2 in nuclear fuel in order to control the core power distribution. During nuclear fission, the temperature at the center of the fuel pellet can reach above 1300 K, where hafnium may substitute uranium and form the binary solid solution of UO2-HfO2. UO2 adopts the cubic fluorite structure, but HfO2 can occur in monoclinic, tetragonal, and cubic structures. The distribution of Hf and U ions in the UO2-HfO2 binary and its atomic structure influence the thermal conductivity and melting point of the fuel. However, experimental data on the UO2-HfO2 binary are limited. Therefore, the enthalpies of mixing of the UO2-HfO2 binary with three different structures were calculated in this study using density functional theory and subsequent Monte Carlo simulations. The free energy of mixing was obtained from thermodynamic integration of the enthalpy of mixing over temperature. From the ΔG of mixing, a phase diagram of the binary was obtained. The calculated UO2-HfO2 binary forms extensive solid solution across the entire compositional range, but there are a variety of possible exsolution phenomena associated with the different HfO2 polymorphs. As the structure of the HfO2 end member adopts lower symmetry and becomes less similar to cubic UO2, the miscibility gap of the phase diagram expands, accompanied by an increase in cell volume by 7-10% as the structure transforms from cubic to monoclinic. Close to the UO2 end member, which is relevant to the nuclear fuel, the isometric uranium-rich solid solutions exsolve as the fuel cools, and there is a tendency to form the monoclinic hafnium-rich phase in the matrix of the isometric, uranium-rich solid solution phase.

  8. The effects of layering in ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  9. Effect of calcination temperature on phase transformation of HfO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Tripathi, S. K.; Kaur, Charanpreet; Kaur, Ramneek; Kaur, Jagdish

    2015-08-01

    Oxides nanomaterials exhibit unique physical, chemical and structural properties and motivated a big research that focus in the integration of these materials for various optoelectronic device applications. In present work, hafnium oxide (HfO2) nanoparticles (NPs) have been synthesized using precipitation method. Hafnium tetrachloride and sodium hydroxide has been used as starting precursors. Prepared oxide material has been characterized by X-Ray Diffraction (XRD), Fourier Transform Infra-Red (FTIR) and UV-Vis spectroscopy. The phase transformation from amorphous to monoclinic is observed with the increase in calcination temperature from 500 °C and 800 °C. In FTIR spectra, the characteristic bands at ν ˜ 758.53 and 509.57 cm-1 reveals the monoclinic phase of prepared HfO2 NPs. UV-Vis spectroscopy shows an absorption peak at 204 nm and the bandgap calculated is 6.07 eV.

  10. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

    PubMed Central

    González, Gabriel; Kolosovas-Machuca, Eleazar Samuel; López-Luna, Edgar; Hernández-Arriaga, Heber; González, Francisco Javier

    2015-01-01

    In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers. PMID:25602271

  11. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2.

    PubMed

    González, Gabriel; Kolosovas-Machuca, Eleazar Samuel; López-Luna, Edgar; Hernández-Arriaga, Heber; González, Francisco Javier

    2015-01-01

    In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers. PMID:25602271

  12. High temperature corrosion of MoSi2 HfO2 composites in coal slag

    NASA Astrophysics Data System (ADS)

    Mueller, Michael; Hilpert, Klaus; Singheiser, Lorenz

    2005-02-01

    The corrosion behaviour of MoSi2 15%HfO2 composites was investigated under simulated Pressurized Pulverized Coal Combustion (PPCC) conditions at 1450 °C in the presence of liquid slag. The composites form a dense glassy corrosion product layer which consists mainly of SiO2 and HfSiO4. The specimens show relative good corrosion resistance against coal slag in comparison to most commercial available ceramic materials.

  13. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    PubMed

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors. PMID:25677113

  14. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

    NASA Astrophysics Data System (ADS)

    Dai, Yuehua; Pan, Zhiyong; Wang, Feifei; Li, Xiaofeng

    2016-08-01

    The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

  15. Enhanced performance of supported HfO2 counter electrodes for redox couples used in dye-sensitized solar cells.

    PubMed

    Yun, Sining; Pu, Haihui; Chen, Junhong; Hagfeldt, Anders; Ma, Tingli

    2014-02-01

    Mesoporous-graphitic-carbon-supported HfO2 (HfO2 -MGC) nanohybrids were synthesized by using a soft-template route. Characterization and a systematic investigation of the catalytic properties, stability, and catalytic mechanism were performed for HfO2 -MGC counter electrodes (CEs) in dye-sensitized solar cells (DSSCs). The new HfO2 -MGC as a CE in DSSCs showed a surprisingly high efficiency of 7.75 % for the triiodide/iodide redox couple and 3.69 % for the disulfide/thiolate redox couple, greater than the Pt electrode in the corresponding electrolyte system, which opens up a possibility for its practical application. PMID:24399514

  16. Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Ye, Gang; Wang, Hong; Ji, Rong

    2016-04-01

    The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔEV of 0.4 ± 0.2 eV at HfO2/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO2 and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO2 and AlN.

  17. Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

    NASA Astrophysics Data System (ADS)

    Mahapatra, R.; Lee, Je-Hun; Maikap, S.; Kar, G. S.; Dhar, A.; Hwang, Nong-M.; Kim, Doh-Y.; Mathur, B. K.; Ray, S. K.

    2003-04-01

    Ultrathin ZrO2 gate dielectrics have been deposited on strain-compensated Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. High-resolution transmission electron microscopy along with energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy show the formation of a polycrystalline ZrO2 and an amorphous Zr-germano-silicate interfacial layer between the deposited oxide and SiGeC films. A dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer have been calculated from the high-frequency capacitance-voltage measurements. These dielectrics show an equivalent oxide thickness as low as 1.9 nm for ZrO2 and 2.0 nm for the interfacial silicate layer. An extremely low leakage current density of ˜9×10-8 A/cm2 at a gate voltage of -1.0 V, breakdown field of 7 MV/cm and moderate interface state density of 6×1011 cm-2 eV-1 have been obtained for the fabricated capacitors.

  18. Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2

    NASA Astrophysics Data System (ADS)

    El Kamel, F.; Gonon, P.; Vallée, C.; Jousseaume, V.; Grampeix, H.

    2011-01-01

    Metal/HfO2/Pt stacks (where the metal is Au, Ag, Co, Ni, Cr, or In) are voltage stressed to induce a high-to-low resistive transition. No current compliance is applied during stressing (except the 100 mA limit of the voltage source). As a consequence very high conductance states are reached after switching, similar to a hard breakdown. Samples conductance after breakdown can reach up to 0.1 S, depending on the metal electrode. Despite the high postbreakdown conductance level, the samples are able to recover an insulating state by further voltage biasing ("high current resistance switching").

  19. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Hao, Xu; Hong, Yang; Yanrong, Wang; Wenwu, Wang; Guangxing, Wan; Shangqing, Ren; Weichun, Luo; Luwei, Qi; Chao, Zhao; Dapeng, Chen; Xinyu, Liu; Tianchun, Ye

    2016-05-01

    The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler–Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  20. Effects of the ratio of O2/Ar pressure on wettability and optical properties of HfO2 films before and after doping with Al

    NASA Astrophysics Data System (ADS)

    Lin, Su-Shia; Liao, Chung-Sheng

    2016-09-01

    HfO2 films were doped with Al (HfO2:Al) by simultaneous RF magnetron sputtering of HfO2 and DC magnetron sputtering of Al. This method is characterized by its ability to independently control the Al content. According to XRD and XPS analyses, the HfO2:Al film had a structure similar to that of HfO2 film, and most of the Al atoms were not in the HfO2 crystalline. A small amount of Al3+ dopant could transform the hydrophobicity of HfO2 films into hydrophilicity. Moreover, the hydrophilicity of the HfO2:Al films improved as the ratio of O2/Ar pressure increased. The nonlinear refractive indices of HfO2 and HfO2:Al films deposited in a pure Ar or a mixed Ar-O2 atmosphere were measured by Moiré deflectometry, and were of the order of 10-8 cm2 W-1. A lower surface roughness, higher optical transmission in the UV-vis-NIR region, and higher linear refractive index were obtained at a higher ratio of O2/Ar pressure.

  1. Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

    NASA Astrophysics Data System (ADS)

    Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung

    2012-04-01

    This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in Gm decrease and positive Vth shift. However, Vth under saturation region shows an insignificant degradation during stress. To compare that, the CHC-induced electron trapping induced DIBL is proposed to demonstrate the different behavior of Vth between linear and saturation region. The devices with different channel length are used to evidence the trapping-induced DIBL behavior.

  2. Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

    NASA Astrophysics Data System (ADS)

    Tsujikawa, Shimpei; Shiga, Katsuya; Umeda, Hiroshi; Yugami, Jiro

    2007-01-01

    The breakdown mechanism of ultrathin SiON gate dielectrics in p-type metal oxide semiconductor field effect transistors having p+gates (p+gate-pMOSFETs) has been studied. Systematic study with varying gate doping concentrations has revealed that, in the case of p+gate-pMOSFET in inversion mode, gate dielectric breakdown under stress voltage lower than -4 V is driven by oxide voltage (Vox) or oxide field (Eox), while the breakdown under stress voltage higher than -4 V is driven by gate voltage (Vg). The Vox/Eox-driven breakdown observed under low stress voltage is quite important to the reliability of low-voltage complementary metal oxide semiconductor (CMOS). By studying the mechanism of the breakdown, it has been clarified that the breakdown is not induced by electron current. The concept that the breakdown is due to same mechanism as the negative bias temperature instability (NBTI), namely the interfacial hydrogen release driven by Eox, has been shown to be possible. However, direct tunneling of holes driven by Vox has also been found to be a possible driving force of the breakdown. Although a decisive conclusion concerning the mechanism issue has not yet been obtained, the key factor that governs the breakdown has been shown to be Vox or Eox.

  3. Reliability of HfO2 metal-insulator-metal capacitors under AC stress

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Jomni, F.; Gonon, P.; Khaldi, O.; Latu-Romain, L.; Mannequin, C.; Bsiesy, A.; Basrour, S.; Yangui, B.

    2016-04-01

    The electrical reliability of HfO2 based metal-insulator-metal capacitors is investigated under AC stress voltage. The capacitance-time (C-t) and conductance-time (G-t) responses are studied for different stress amplitudes and frequencies. Time-to-breakdown is observed to strongly depend on the electrode nature. Electrical degradation is discussed via a model based on oxygen vacancy/oxygen ions generation. Defect generation is controlled by the injecting nature of electrodes. Partial recovery, and so time-to-breakdown, are controlled by the ability of electrodes to store oxygen.

  4. Hydrogen doping in HfO2 resistance change random access memory

    NASA Astrophysics Data System (ADS)

    Duncan, D.; Magyari-Köpe, B.; Nishi, Y.

    2016-01-01

    The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO2 resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.

  5. Effects of different dopants on switching behavior of HfO2-based resistive random access memory

    NASA Astrophysics Data System (ADS)

    Deng, Ning; Pang, Hua; Wu, Wei

    2014-10-01

    In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.

  6. Chemical vapor deposition of anisotropic ultrathin gold films on optical fibers: real-time sensing by tilted fiber Bragg gratings and use of a dielectric pre-coating

    NASA Astrophysics Data System (ADS)

    Mandia, David J.; Zhou, Wenjun; Ward, Matthew J.; Joress, Howie; Giorgi, Javier B.; Gordon, Peter; Albert, Jacques; Barry, Seán. T.

    2014-09-01

    Tilted fiber Bragg gratings (TFBGs) are refractometry-based sensor platforms that have been employed herein as devices for the real-time monitoring of chemical vapour deposition (CVD) in the near-infrared range (NIR). The coreguided light launched within the TFBG core is back-reflected off a gold mirror sputtered onto the fiber-end and is scattered out into the cladding where it can interact with a nucleating thin film. Evanescent fields of the growing gold nanostructures behave differently depending on the polarization state of the core-guided light interrogating the growing film, therefore the resulting spectral profile is typically decomposed into two separate peak families for the orthogonal S- and P-polarizations. Wavelength shifts and attenuation profiles generated from gold films in the thickness regime of 5-100 nm are typically degenerate for deposition directly onto the TFBG. However, a polarization-dependence can be imposed by adding a thin dielectric pre-coating onto the TFBG prior to using the device for CVD monitoring of the ultrathin gold films. It is found that addition of the pre-coating enhances the sensitivity of the P-polarized peak family to the deposition of ultrathin gold films and renders the films optically anisotropic. It is shown herein that addition of the metal oxide coating can increase the peak-to-peak wavelength separation between orthogonal polarization modes as well as allow for easy resonance tracking during deposition. This is also the first reporting of anisotropic gold films generated from this particular gold precursor and CVD process. Using an ensemble of x-ray techniques, the local fine structure of the gold films deposited directly on the TFBG is compared to gold films of similar thicknesses deposited on the Al2O3 pre-coated TFBG and witness slides.

  7. RF Micro-Electro-Mechanical Systems Capacitive Switches Using Ultra Thin Hafnium Oxide Dielectric

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Onodera, Kazumasa; Maeda, Ryutaro

    2006-01-01

    A π-type RF capacitive switch using about 45-nm-thick HfO2 dielectric layer was fabricated. High isolation performance was obtained in wide-band range when the switch was down-state. The isolation was better than -40 dB at the frequency range of 4-35 GHz. Particularly, the isolation was better than -50 dB in the frequency range of 8-12 GHz, i.e., X band. HfO2 showed excellent process compatibility with conventional microfabrication procedure. The 45-nm-thick HfO2 film was prepared using sputtering at room temperature so that it was feasible to be integrated into RF switch and other microwave circuits. The results of constant bias stressing showed that the ultra thin HfO2 had excellent reliability. The electric breakdown of HfO2 was observed, which had no apparent negative effects on the reliability of the dielectric. HfO2 dielectrics were attractive in the application of RF micro-electro-mechanical systems (MEMS) switch for new generation of low-loss high-linearity microwave circuits.

  8. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    PubMed Central

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-01-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm2. Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm2. This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes. PMID:27608815

  9. Thickness dependent wetting properties and surface free energy of HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Zenkin, Sergei; Belosludtsev, Alexandr; Kos, Šimon; Čerstvý, Radomír; Haviar, Stanislav; Netrvalová, Marie

    2016-06-01

    We show here that intrinsic hydrophobicity of HfO2 thin films can be easily tuned by the variation of film thickness. We used the reactive high-power impulse magnetron sputtering for preparation of high-quality HfO2 films with smooth topography and well-controlled thickness. Results show a strong dependence of wetting properties on the thickness of the film in the range of 50-250 nm due to the dominance of the electrostatic Lifshitz-van der Waals component of the surface free energy. We have found the water droplet contact angle ranging from ≈120° for the thickness of 50 nm to ≈100° for the thickness of 2300 nm. At the same time the surface free energy grows from ≈25 mJ/m2 for the thickness of 50 nm to ≈33 mJ/m2 for the thickness of 2300 nm. We propose two explanations for the observed thickness dependence of the wetting properties: influence of the non-dominant texture and/or non-monotonic size dependence of the particle surface energy.

  10. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  11. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film.

    PubMed

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J; Sakata, Osami; Funakubo, Hiroshi

    2016-01-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed - electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm(2). Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm(2). This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes. PMID:27608815

  12. Electron-Injection-Assisted Generation of Oxygen Vacancies in Monoclinic HfO2

    NASA Astrophysics Data System (ADS)

    Bradley, Samuel R.; Shluger, Alexander L.; Bersuker, Gennadi

    2015-12-01

    Understanding the mechanisms of generation of oxygen vacancies in monoclinic (m )-HfO2 is important for improving and controlling its performance as an oxide layer in transistor gate stacks and in resistive random-access memory (RRAM) devices. We use ab initio calculations to investigate the mechanism of formation of Frenkel pairs of oxygen vacancies and interstitial ions in m -HfO2 under electron-injection conditions. The results demonstrate that the formation of stable pairs of neutral oxygen vacancies and interstitial oxygen ions assisted by extra electrons is thermodynamically feasible and requires overcoming activation barriers of less than 1.3 eV at preexisting O vacancies. A preexisting oxygen vacancy can act as an electron trap and facilitate the formation of an O vacancy and O interstitial ion pair nearby. The resulting O divacancy is stabilized by weak attraction between neutral vacancies, further lowering the formation energy of the defect pair. The binding energy per vacancy in larger oxygen-vacancy aggregates increases as the aggregate grows, facilitating the formation of defect pairs next to larger vacancy aggregates. These results are useful for understanding the mechanisms of oxide degradation and electroforming in RRAM cells, which can proceed through creation of new O vacancies in the vicinity of preexisting vacancies complementing vacancy aggregation via diffusion processes.

  13. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    PubMed

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device. PMID:25958498

  14. HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention.

    PubMed

    Huang, Xueyao; Wu, Huaqiang; Bin Gao; Sekar, Deepak C; Dai, Lingjun; Kellam, Mark; Bronner, Gary; Deng, Ning; Qian, He

    2016-09-30

    In this work, the HfO2/Al2O3 multilayer structure is applied for RRAM arrays. Compared to HfO2 RRAM, the data retention failure of tail bits is suppressed significantly, especially for the high resistance state (HRS). The retention of tail bits is studied in detail by temperature simulation and crystallization analysis. We attribute the improvement of tail-bit retention to the decreased oxygen ion diffusivity caused by the Al2O3 layer. Furthermore, the HfO2/Al2O3 multilayer structure exhibits higher crystallization temperature, thus leading to fewer grain boundaries around the filament during the operations. With fewer grain boundaries, oxygen ion diffusion is suppressed, leading to fewer tail bits and better retention. PMID:27537613

  15. Low temperature atomic layer deposited HfO2 film for high performance charge trapping flash memory application

    NASA Astrophysics Data System (ADS)

    Chen, Guoxing; Huo, Zongliang; Jin, Lei; Zhang, Dong; Zhao, Shengjie; Han, Yulong; Liu, Su; Liu, Ming

    2014-04-01

    The impact of key process parameters on the electrical characteristics of atomic layer deposited HfO2 films has been systematically studied with MHOS devices via capacitance-voltage (C-V) measurement. C-V hysteresis curves revealed that charge storage capacity is significantly enhanced with decreasing substrate temperature from 350 down to 150 °C and/or increasing purge time of the inert gas. The developed HfO2 trapping layer was also demonstrated by a MAHOS memory device. Improved memory window, fast program speed and good retention characteristics have been obtained. The study provides a reference for memory performance improvement of HfO2-based charge trap flash memory.

  16. Improved Reliability of InGaN-Based Light-Emitting Diodes by HfO2 Passivation Layer.

    PubMed

    Park, Seung Hyun; Kim, Yoon Seok; Kim, Tae Hoon; Ryu, Sang Wan

    2016-02-01

    We utilized a passivation layer to improve the leakage current and reliability characteristics of GaN-based light-emitting diodes. The electrical and optical characteristics of the fabricated LEDs were characterized by current-voltage and optical power measurements. The HfO2 passivation layer showed no optical power degradation and suppressed leakage current. The low deposition temper- ature of sputtered HfO2 is responsible for the improved reliability of the LEDs because it suppresses the diffusion of hydrogen plasma into GaN to form harmful Mg-H complexes. PMID:27433667

  17. Hafnium dioxide gate dielectrics, metal gate electrodes, and phenomena occurring at their interfaces

    NASA Astrophysics Data System (ADS)

    Schaeffer, James Kenyon, III

    As metal-oxide-semiconductor field-effect transistor (MOSFET) gate lengths scale down below 45 nm, the gate oxide thickness approaches 1 nm equivalent oxide thickness. At this thickness, conventional silicon dioxide (SiO 2) gate dielectrics suffer from excessive gate leakage. Higher permittivity dielectrics are required to counter the increase in gate leakage. Hafnium dioxide (HfO2) has emerged as a promising dielectric candidate. HfO2 films deposited using metal organic chemical vapor deposition are being studied to determine the impact of process and annealing conditions on the physical and electrical properties of the gate dielectric. This study indicates that deposition and annealing temperatures influence the microstructure, density, impurity concentration, chemical environment of the impurities, and band-gap of the HfO2 dielectric. Correlations of the electrical and physical properties of the films indicate that impurities in the form of segregated carbon clusters, and low HfO2 density are detrimental to the leakage properties of the gate dielectric. Additionally, as the HfO2 thickness scales, the additional series capacitance due to poly-silicon depletion plays a larger roll in reducing the total gate capacitance. To solve this problem, high performance bulk MOSFETs will require dual metal gate electrodes possessing work functions near the silicon band edges for optimized drive current. This investigation evaluates TiN, Ta-Si-N, Ti-Al-N, WN, TaN, TaSi, Ir and IrO2 electrodes as candidate electrodes on HfO2 dielectrics. The metal-dielectric compatibility was studied by annealing the gate stacks at different temperatures. The physical stability and effective work functions of metal electrodes on HfO2 are discussed. Finally, Fermi level pinning of the metal is a barrier to identifying materials with appropriate threshold voltages. The contributions to the Fermi level pinning of platinum electrodes on HfO2 gate dielectrics are investigated by examining the

  18. Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

    NASA Astrophysics Data System (ADS)

    Minoura, Yuya; Kasuya, Atsushi; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2013-07-01

    High-quality Ge-based metal-oxide-semiconductor (MOS) stacks were achieved with ultrathin oxynitride (GeON) gate dielectrics. An in situ process based on plasma nitridation of the base germanium oxide (GeO2) surface and subsequent metal electrode deposition was proven to be effective for suppressing electrical deterioration induced by the reaction at the metal/insulator interface. The electrical properties of the bottom GeON/Ge interface were further improved by both low-temperature oxidation for base GeO2 formation and high-temperature in situ vacuum annealing after plasma nitridation of the base oxide. Based on the optimized in situ gate stack fabrication process, very high inversion carrier mobility (μhole: 445 cm2/Vs, μelectron: 1114 cm2/Vs) was demonstrated for p- and n-channel Ge MOSFETs with Al/GeON/Ge gate stacks at scaled equivalent oxide thickness down to 1.4 nm.

  19. Resistance switching in HfO2 metal-insulator-metal devices

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Mougenot, M.; Vallée, C.; Jorel, C.; Jousseaume, V.; Grampeix, H.; El Kamel, F.

    2010-04-01

    Resistance switching is studied in Au/HfO2 (10 nm)/(Pt, TiN) devices, where HfO2 is deposited by atomic layer deposition. The study is performed using different bias modes, i.e., a sweeping, a quasistatic and a static (constant voltage stress) mode. Instabilities are reported in several circumstances (change in bias polarity, modification of the bottom electrode, and increase in temperature). The constant voltage stress mode allows extracting parameters related to the switching kinetics. This mode also reveals random fluctuations between the ON and OFF states. The dynamics of resistance switching is discussed along a filamentary model which implies oxygen vacancies diffusion. The rf properties of the ON and OFF states are also presented (impedance spectroscopy).

  20. Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS

    NASA Astrophysics Data System (ADS)

    Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea

    2015-11-01

    In this work, we present a thorough statistical characterization of Random Telegraph Noise (RTN) in HfO2-based Resistive Random Access Memory (RRAM) cells in Low Resistive State (LRS). Devices are tested under a variety of operational conditions. A Factorial Hidden Markov Model (FHMM) analysis is exploited to extrapolate the properties of the traps causing multi-level RTN in LRS. The trapping and de-trapping of charge carriers into/out of defects located in the proximity of the conductive filament results in a shielding effect on a portion of the conductive filament, leading to the observed RTN current fluctuations. It is found that both oxygen vacancies and oxygen ions defects may be responsible for the observed RTN. The variations of the current observed at subsequent set/reset cycles are instead attributed to the stochastic variations in the filament due to oxidation/reduction processes during reset and set operations, respectively.

  1. Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

    NASA Astrophysics Data System (ADS)

    Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen

    2015-05-01

    The effect of the annealing treatment of a HfO2 resistive switching layer and the memory performance of a HfO2-based resistive random access memory (cross-bar structure) device were investigated. Oxygen is released from HfO2 resistive switching layers during vacuum annealing, leading to unstable resistive switching properties. This oxygen release problem can be suppressed by inserting an Al2O3 thin film, which has a lower Gibbs free energy, between the HfO2 layer and top electrode to form a Ti/Al2O3/HfO2/TiN structure. This device structure exhibited good reliability after high temperature vacuum annealing and post metal annealing (PMA) treatments. Moreover, the endurance and retention properties of the device were also improved after the PMA treatment.

  2. First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

    NASA Astrophysics Data System (ADS)

    Dai, Yuehua; Zhao, Yuanyang; Wang, Jiayu; Xu, Jianbin; Yang, Fei

    2015-01-01

    HfO2-based resistive random access memory (RRAM) takes advantage of oxygen vacancy (V o) defects in its principle of operation. Since the change in resistivity of the material is controlled by the level of oxygen deficiency in the material, it is significantly important to study the performance of oxygen vacancies in formation of conductive filament. Excluding effects of the applied voltage, the Vienna ab initio simulation package (VASP) is used to investigate the orientation and concentration mechanism of the oxygen vacancies based on the first principle. The optimal value of crystal orientation [010] is identified by means of the calculated isosurface plots of partial charge density, formation energy, highest isosurface value, migration barrier, and energy band of oxygen vacancy in ten established orientation systems. It will effectively influence the SET voltage, forming voltage, and the ON/OFF ratio of the device. Based on the results of orientation dependence, different concentration models are established along crystal orientation [010]. The performance of proposed concentration models is evaluated and analyzed in this paper. The film is weakly conductive for the samples deposited in a mixture with less than 4.167at.% of V o contents, and the resistive switching (RS) phenomenon cannot be observed in this case. The RS behavior improves with an increase in the V o contents from 4.167at.% to 6.25at.%; nonetheless, it is found difficult to switch to a stable state. However, a higher V o concentration shows a more favorable uniformity and stability for HfO2-based RRAM.

  3. Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes

    NASA Astrophysics Data System (ADS)

    Ohta, Akio; Goto, Yuta; Nishigaki, Shingo; Murakami, Hideki; Higashi, Seiichiro; Miyazaki, Seiichi

    2012-06-01

    We investigated the chemical bonding features and resistance switching properties of ultrathin Si-rich oxides sandwiched between Pt electrodes to evaluate the feasibility of SiOx-based resistance random access memories (ReRAMs). In the early stages of SiOx deposition on Pt by radio-frequency (RF) sputtering in Ar + O2 gas mixture at 300 °C, the formation of a PtOx layer at the interface between SiOx and the Pt bottom electrode was observed. This interfacial PtOx layer decreased in thickness with increasing SiOx thickness. With decreasing as-deposited SiOx thickness down to 3.3 nm, the initial electrical state changed from the high resistance state (HRS) to the low resistance state (LRS), and resistance switching behavior was observed without the forming process. To gain a better understanding of the resistance switching mechanism, especially the role of oxygen deficiency in the SiOx network, we investigated the impact of O2 annealing after SiOx deposition on the switching behavior. The resistance switching behaviors were barely detectable for the samples at O2 annealing temperatures of over 500 °C. The results imply that the oxygen vacancies in the SiOx play an important role in resistance switching.

  4. Hafnia (HfO2) nanoparticles as an X-ray contrast agent and mid-infrared biosensor.

    PubMed

    McGinnity, Tracie L; Dominguez, Owen; Curtis, Tyler E; Nallathamby, Prakash D; Hoffman, Anthony J; Roeder, Ryan K

    2016-07-14

    The interaction of hafnium oxide (HfO2) nanoparticles (NPs) with X-ray and mid-infrared radiation was investigated to assess the potential as a multifunctional diagnostic probe for X-ray computed tomography (CT) and/or mid-infrared biosensing. HfO2 NPs of controlled size were prepared by a sol-gel process and surface functionalized with polyvinylpyrrolidone, resulting in relatively spherical and monodispersed NPs with a tunable mean diameter in the range of ∼7-31 nm. The X-ray attenuation of HfO2 NPs was measured over 0.5-50 mM concentration and compared with Au NPs and iodine, which are the most prominent X-ray contrast agents currently used in research and clinical diagnostic imaging, respectively. At clinical CT tube potentials >80 kVp, HfO2 NPs exhibited superior or similar X-ray contrast compared to Au NPs, while both exhibited significantly greater X-ray contrast compared to iodine, due to the favorable location of the k-shell absorption edge for hafnium and gold. Moreover, energy-dependent differences in X-ray attenuation enabled simultaneous quantitative molecular imaging of each agent using photon-counting spectral (multi-energy) CT. HfO2 NPs also exhibited a strong mid-infrared absorption in the Reststrahlen band from ∼250-800 cm(-1) and negative permittivity below 695 cm(-1), which can enable development of mid-infrared biosensors and contrast agents, leveraging surface enhanced mid-infrared and/or phonon polariton absorption. PMID:27364973

  5. Hafnia (HfO2) nanoparticles as an X-ray contrast agent and mid-infrared biosensor

    NASA Astrophysics Data System (ADS)

    McGinnity, Tracie L.; Dominguez, Owen; Curtis, Tyler E.; Nallathamby, Prakash D.; Hoffman, Anthony J.; Roeder, Ryan K.

    2016-07-01

    The interaction of hafnium oxide (HfO2) nanoparticles (NPs) with X-ray and mid-infrared radiation was investigated to assess the potential as a multifunctional diagnostic probe for X-ray computed tomography (CT) and/or mid-infrared biosensing. HfO2 NPs of controlled size were prepared by a sol-gel process and surface functionalized with polyvinylpyrrolidone, resulting in relatively spherical and monodispersed NPs with a tunable mean diameter in the range of ~7-31 nm. The X-ray attenuation of HfO2 NPs was measured over 0.5-50 mM concentration and compared with Au NPs and iodine, which are the most prominent X-ray contrast agents currently used in research and clinical diagnostic imaging, respectively. At clinical CT tube potentials >80 kVp, HfO2 NPs exhibited superior or similar X-ray contrast compared to Au NPs, while both exhibited significantly greater X-ray contrast compared to iodine, due to the favorable location of the k-shell absorption edge for hafnium and gold. Moreover, energy-dependent differences in X-ray attenuation enabled simultaneous quantitative molecular imaging of each agent using photon-counting spectral (multi-energy) CT. HfO2 NPs also exhibited a strong mid-infrared absorption in the Reststrahlen band from ~250-800 cm-1 and negative permittivity below 695 cm-1, which can enable development of mid-infrared biosensors and contrast agents, leveraging surface enhanced mid-infrared and/or phonon polariton absorption.

  6. HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

    NASA Astrophysics Data System (ADS)

    Kim, Hyoung-Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Majhi, Prashant

    2008-09-01

    In this letter, we present our experimental results of HfO2-based n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on indium phosphide (InP) substrates using a thin germanium (Ge) interfacial passivation layer (IPL). We found that MOSCAPs on n-InP substrates showed good C-V characteristics such as a small capacitance equivalent thickness (14Å ), a small frequency dispersion (<10% and <200mV), and a low dielectric leakage current (˜5×10-4A/cm2 at Vg=1.5V), whereas MOSCAPs on p-InP exhibited poor characteristics, implying severe Fermi level pinning. It was also found that InP was more vulnerable to a high temperature process such that C-V curves showed a characteristic "bump" and inversion capacitance at relatively high frequencies. From n-channel MOSFETs on a semi-insulating InP substrate using Ge IPL, HfO2, and TaN gate electrodes, excellent electrical characteristics such as a large transconductance (9.3mS /mm) and large drain currents (12.3mA/mm at Vd=2V and Vg=Vth+2V) were achieved, which are comparable to other works.

  7. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    PubMed Central

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  8. Damage evaluation in graphene underlying atomic layer deposition dielectrics.

    PubMed

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  9. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Chen, Liu; Yuming, Zhang; Yimen, Zhang; Hongliang, Lü; Bin, Lu

    2015-12-01

    We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition (ALD) and annealing of HfO2 using the tetrakis (ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300 °C as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing (PDA) at 500 °C after ALD at 300 °C leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500 °C has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga2O3. The increment of Ga2O3 after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties. Project supported by the Advance Research Project of China (No. 5130803XXXX) and the National Natural Science Foundation of China (No. 61176070).

  10. Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

    NASA Astrophysics Data System (ADS)

    Domanowska, A.; Miczek, M.; Ucka, R.; Matys, M.; Adamowicz, B.; Żywicki, J.; Taube, A.; Korwin-Mikke, K.; Gierałtowska, S.; Sochacki, M.

    2012-08-01

    The electronic and chemical properties of the interface region in the structures obtained by the passivation of epitaxial n-type 4H-SiC layers with bilayers consisting of a 5 nm-thick SiO2 or Al2O3 buffer film and high-κ HfO2 layer were investigated. The main aim was to estimate the influence of the passivation approach on the interface effective charge density (Qeff) from the surface photovoltage (SPV) method and, in addition to determine the in-depth element distribution in the interface region from the Auger electron spectroscopy (AES) combined with Ar+ ion profiling. The structure HfO2/SiO2/4H-SiC exhibited slightly superior electronic properties in terms of Qeff (in the range of -1011 q cm-2).

  11. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

    NASA Astrophysics Data System (ADS)

    Jiang, Hao; Han, Lili; Lin, Peng; Wang, Zhongrui; Jang, Moon Hyung; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

    2016-06-01

    Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. Here we report a Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation and depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO2 layer that is responsible for the switching. This work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications.

  12. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.

    PubMed

    Jiang, Hao; Han, Lili; Lin, Peng; Wang, Zhongrui; Jang, Moon Hyung; Wu, Qing; Barnell, Mark; Yang, J Joshua; Xin, Huolin L; Xia, Qiangfei

    2016-01-01

    Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. Here we report a Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We programmed the device to 24 discrete resistance levels, and also demonstrated over a million (2(20)) epochs of potentiation and depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO2 layer that is responsible for the switching. This work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications. PMID:27334443

  13. Stress-induced leakage current and trap generation in HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Mannequin, C.; Gonon, P.; Vallée, C.; Latu-Romain, L.; Bsiesy, A.; Grampeix, H.; Salaün, A.; Jousseaume, V.

    2012-10-01

    Stress-induced leakage current (SILC) is studied in 10 nm HfO2 metal-insulator-metal capacitors. Three regimes are observed in the current-time characteristics, namely, (1) an absorption current, (2) a quasi linear increase of current with time (SILC), and (3) thermal breakdown. Magnitude of SILC is strongly correlated to the nature of the cathode (being large for TiN and weak for Pt and Au), showing that SILC is governed by electron injection. Recovery is observed when short-circuiting the samples, pointing out that SILC is a reversible phenomenon. Desorption current and SILC are not correlated, which indicates that different defects control the absorption current and SILC. SILC is ascribed to the generation of oxygen vacancies upon hot electron injection, while recovery is ascribed to the recombination of oxygen ions with vacancies. In the SILC regime, the current varies as Ktn (n = 1.15 at room temperature). Bias and temperature dependence of K and n are studied. The dependence of K on bias can be described either by a Fowler-Nordheim law or by an exponential law, while the exponent n is almost independent of bias. When temperature is increased, K increases according to an Arrhenius law and n decreases. SILC is modeled by considering the generation of oxygen vacancies by hot electron impact and subsequent electron trapping at vacancies (hopping conduction). An analytical expression for SILC growth is obtained from first order kinetics.

  14. Interface engineered HfO2-based 3D vertical ReRAM

    NASA Astrophysics Data System (ADS)

    Hudec, Boris; Wang, I.-Ting; Lai, Wei-Li; Chang, Che-Chia; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária; Hou, Tuo-Hung

    2016-06-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO2/TiN memory cell. The HfO2 switching layer is grown by atomic layer deposition on the sidewall of a SiO2/TiN/SiO2/TiN/SiO2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 104 s and excellent switching stability at 400 K. Endurance of 107 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance.

  15. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

    PubMed Central

    Jiang, Hao; Han, Lili; Lin, Peng; Wang, Zhongrui; Jang, Moon Hyung; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

    2016-01-01

    Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. Here we report a Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation and depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO2 layer that is responsible for the switching. This work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications. PMID:27334443

  16. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

    NASA Astrophysics Data System (ADS)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-04-01

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  17. Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash.

    PubMed

    Yoon, Jung Ho; Kim, Kyung Min; Song, Seul Ji; Seok, Jun Yeong; Yoon, Kyung Jean; Kwon, Dae Eun; Park, Tae Hyung; Kwon, Young Jae; Shao, Xinglong; Hwang, Cheol Seong

    2015-07-01

    Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism. PMID:25973913

  18. Feature Modeling of HfO2 Atomic Layer Deposition Using HfCl4/H2O

    NASA Astrophysics Data System (ADS)

    Stout, Phillip J.; Adams, Vance; Ventzek, Peter L. G.

    2003-03-01

    A Monte Carlo based feature scale model (Papaya) has been applied to atomic layer deposition (ALD) of HfO2 using HfCl_4/H_20. The model includes physical effects of transport to surface, specular and diffusive reflection within feature, adsorption, surface diffusion, deposition and etching. Discussed will be the 3D feature modeling of HfO2 deposition in assorted features (vias and trenches). The effect of feature aspect ratios, pulse times, cycle number, and temperature on film thickness, feature coverage, and film Cl fraction (surface/bulk) will be discussed. Differences between HfO2 ALD on blanket wafers and in features will be highlighted. For instance, the minimum pulse times sufficient for surface reaction saturation on blanket wafers needs to be increased when depositing on features. Also, HCl products created during the HfCl4 and H_20 pulses are more likely to react within a feature than at the field, reducing OH coverage within the feature (vs blanket wafer) thus limiting the maximum coverage attainable for a pulse over a feature.

  19. HfO2/SiO2 multilayer based reflective and transmissive optics from the IR to the UV

    NASA Astrophysics Data System (ADS)

    Wang, Jue; Hart, Gary A.; Oudard, Jean Francois; Wamboldt, Leonard; Roy, Brian P.

    2016-05-01

    HfO2/SiO2 multilayer based reflective optics enable threat detection in the short-wave/middle-wave infrared and high power laser targeting capability in the near infrared. On the other hand, HfO2/SiO2 multilayer based transmissive optics empower early missile warning by taking advantage of the extremely low noise light detection in the deep-ultraviolet region where solar irradiation is strongly absorbed by the ozone layer of the earth's atmosphere. The former requires high laser damage resistance, whereas the latter needs a solar-blind property, i.e., high transmission of the radiation below 290 nm and strong suppression of the solar background from 300 nm above. The technical challenges in both cases are revealed. The spectral limits associated with the HfO2 and SiO2 films are discussed and design concepts are schematically illustrated. Spectral performances are realized for potential A and D and commercial applications.

  20. Distribution of electron traps in SiO2/HfO2 nMOSFET

    NASA Astrophysics Data System (ADS)

    Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

    2016-05-01

    In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ∼ ‑1.0 eV and ‑1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

  1. Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs

    NASA Astrophysics Data System (ADS)

    Jousseaume, V.; Fantini, A.; Nodin, J. F.; Guedj, C.; Persico, A.; Buckley, J.; Tirano, S.; Lorenzi, P.; Vignon, R.; Feldis, H.; Minoret, S.; Grampeix, H.; Roule, A.; Favier, S.; Martinez, E.; Calka, P.; Rochat, N.; Auvert, G.; Barnes, J. P.; Gonon, P.; Vallée, C.; Perniola, L.; De Salvo, B.

    2011-04-01

    This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO 2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO 2 and NiO devices. Then, by using a specific test setup, we present a systematic comparative study of HfO 2 and NiO devices, clearly showing the tunability of the electrical characteristics with material type and process. HfO 2 devices lead to largest High Resistance State/Low Resistance State ratios and higher forming voltages compared to NiO cells, while reset voltages are similar. Data retention of both materials show highly stable Low Resistance State, while High Resistance State increases over time under 85 °C baking.

  2. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    NASA Astrophysics Data System (ADS)

    Ji, Yanfeng; Pan, Chengbin; Zhang, Meiyun; Long, Shibing; Lian, Xiaojuan; Miao, Feng; Hui, Fei; Shi, Yuanyuan; Larcher, Luca; Wu, Ernest; Lanza, Mario

    2016-01-01

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO2, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  3. Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

    DOE PAGESBeta

    Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; Smith, Chris; Jensen, Lars; Guenster, Stefan; Maedebach, Heinrich; Ristau, Detlev

    2016-07-15

    Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similarmore » to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO2 and SiO2 materials.« less

  4. Photoluminescence of rare earth3+ doped uniaxially aligned HfO2 nanotubes prepared by sputtering with electrospun polyvinylpyrolidone nanofibers as templates

    NASA Astrophysics Data System (ADS)

    Liu, L. X.; Ma, Z. W.; Xie, Y. Z.; Su, Y. R.; Zhao, H. T.; Zhou, M.; Zhou, J. Y.; Li, J.; Xie, E. Q.

    2010-01-01

    Rare earth (RE) ions (Eu3+,Tb3+) doped uniaxially aligned HfO2 nanotubes were prepared by radio frequency sputtering with electrospun polyvinylpyrolidone (PVP) nanofiber templates. The as-sputtered samples were annealed at different temperatures (500-1000 °C) in O2 ambient in order to remove their PVP cores and make the HfO2 shells well crystallized. Morphologies and crystal configuration of the samples were investigated by optical microscope, scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. The nanotubes have uniform intact structure with an average diameter of 200 nm and a wall thickness of about 25 nm. Photoluminescence (PL) properties of the RE doped nanotubes have been studied in detail. The emission peaks of the aligned HfO2:Eu and HfO2:Tb nanotubes could correspond to the D50→F7J (J =0-2) transitions of Eu3+ and the D54→F7J (J =3-6) transitions of Tb3+, respectively. The PL intensities of the HfO2:RE3+ nanotubes were higher by several orders of magnitude than that of the films. This enhancement in the PL could be ascribed to the high density of surface states of HfO2:RE3+ nanotubes.

  5. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    NASA Astrophysics Data System (ADS)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  6. Thermally stable anomalous Hall behavior in perpendicular Co/Pt multilayers sandwiched by HfO2 layers

    NASA Astrophysics Data System (ADS)

    Jiang, Shao-Long; Li, Xu-Jing; Liu, Yi-Wei; Chen, Xi; Liu, Qian-Qian; Han, Gang; Yang, Guang; Wang, Dong-Wei; Zhang, Jing-Yan; Teng, Jiao; Yu, Guang-Hua

    2016-01-01

    The effect of annealing on the anomalous Hall effect (AHE) in perpendicular Co/Pt multilayers sandwiched by HfO2 layers has been studied. It was found that thermally stable AHE features can be obtained in perpendicular Co/Pt multilayers with the introduction of two Co/HfO2 interfaces, leading to the improvement of the skew scattering contribution to the AHE after annealing. On the contrary, thermally stable AHE behavior cannot be observed in Co/Pt multilayers sandwiched by Pt layers or MgO layers because of Co-Pt interdiffusion during annealing.

  7. Study of the surface modification with oleic acid of nanosized HfO2 synthesized by the polymerized complex derived sol-gel method

    NASA Astrophysics Data System (ADS)

    Ramos-González, R.; García-Cerda, L. A.; Quevedo-López, M. A.

    2012-06-01

    The synthesis of nanosized hafnium oxide by the polymerized complex derived sol-gel method is reported. The structural and morphological characterization of the HfO2 was carried out by X-ray diffraction and scanning electron microscopy. The surface of hafnium oxide nanoparticles was modified by capping with oleic acid. The nanoparticle surface area was measured by the gas adsorption technique in order to determine the minimal amount of oleic acid needed to obtain a uniform coverage of the hafnium oxide. The existence of organic layer can be confirmed by Fourier transform spectroscopy, solid state nuclear magnetic resonance spectroscopy, thermal gravimetric analysis and transmission electron microscopy. The FTIR and solid state NMR results reveal that oleic acid is chemisorbed as a carboxylate onto the HfO2 nanoparticle surface and confirm the formation of a monomolecular layer of oleic acid surrounding the HfO2. The cover density of oleic acid on the HfO2 increases with the amount of oleic acid used to modify the nanoparticles and the surface properties of HfO2 nanoparticles modified with oleic acid change from hydrophilic to hydrophobic.

  8. Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Chang, Y. H.; Lin, C. A.; Liu, Y. T.; Chiang, T. H.; Lin, H. Y.; Huang, M. L.; Lin, T. D.; Pi, T. W.; Kwo, J.; Hong, M.

    2012-10-01

    High κ gate dielectrics of HfO2 and Al2O3 were deposited on molecular beam epitaxy-grown In0.2Ga0.8As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO2/p-In0.2Ga0.8As interface showed notable reduction in the interfacial density of states (Dit), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 °C. More significantly, the midgap peak commonly observed in the Dit(E) of ALD-oxides/In0.2Ga0.8As is now greatly diminished. The midgap Dit value decreases from ≥15 × 1012 eV-1 cm-2 for ALD-Al2O3 to ˜2-4 × 1012 eV-1 cm-2 for ALD-HfO2. Further, thermal stability at 850 °C was achieved in the HfO2/In0.2Ga0.8As, whereas C-V characteristics of Al2O3/p-In0.2Ga0.8As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsOx, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H2O, was found at the ALD-Al2O3/In0.2Ga0.8As interface, while that was not detected at the ALD-HfO2/In0.2Ga0.8As interface.

  9. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-05-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

  10. Low-Concentration NO2 Gas Sensor Based on HfO2 Thin Films Irradiated by Ultraviolet Light

    NASA Astrophysics Data System (ADS)

    Karaduman, Irmak; Barin, Özlem; Özer, Metin; Acar, Selim

    2016-04-01

    In this work, we investigate the gas-sensing properties of HfO2 thin films enhanced by ultraviolet (UV) light irradiation. The films were deposited on silicon substrate by atomic layer deposition (ALD) and annealed at 800°C. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for characterization of the samples, which revealed that the degree of crystallinity and electrical properties of the HfO2 thin films were affected by the annealing temperature. Different film thicknesses (20 nm and 10 nm) were used for gas-sensing measurements. The gas-sensing properties of the films were affected by the UV irradiation time, with improvements in sensor properties observed for samples with more than 30 min of irradiation. The maximum response was found for the 10-nm sensor annealed at 800°C. Moreover, a linear dependence on NO2 concentration was observed for the response, suggesting that the sensing layer is highly suitable for detecting NO2 gas concentrations as low as 1 ppm.

  11. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

    PubMed Central

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-01-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability. PMID:27181525

  12. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.

    PubMed

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-01-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability. PMID:27181525

  13. Low-Concentration NO2 Gas Sensor Based on HfO2 Thin Films Irradiated by Ultraviolet Light

    NASA Astrophysics Data System (ADS)

    Karaduman, Irmak; Barin, Özlem; Özer, Metin; Acar, Selim

    2016-08-01

    In this work, we investigate the gas-sensing properties of HfO2 thin films enhanced by ultraviolet (UV) light irradiation. The films were deposited on silicon substrate by atomic layer deposition (ALD) and annealed at 800°C. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for characterization of the samples, which revealed that the degree of crystallinity and electrical properties of the HfO2 thin films were affected by the annealing temperature. Different film thicknesses (20 nm and 10 nm) were used for gas-sensing measurements. The gas-sensing properties of the films were affected by the UV irradiation time, with improvements in sensor properties observed for samples with more than 30 min of irradiation. The maximum response was found for the 10-nm sensor annealed at 800°C. Moreover, a linear dependence on NO2 concentration was observed for the response, suggesting that the sensing layer is highly suitable for detecting NO2 gas concentrations as low as 1 ppm.

  14. Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target

    SciTech Connect

    Aguirre, B.; Vemuri, R. S.; Zubia, David; Engelhard, Mark H.; Shutthanandan, V.; Kamala Bharathi, K.; Ramana, Chintalapalle V.

    2011-01-01

    Hafnium oxide (HfO₂) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO₂ ceramic target has been employed for sputtering while varying the Ts from room temperature to 500⁰C during deposition. The effect of Ts on the growth and microstructure of deposited HfO₂ films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition of the HfO₂ films. Structural characterization indicates that the HfO₂ films grown at Ts<200 ⁰C are amorphous while films grown at Ts>200 ⁰C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ⁰C. Nanocrystalline HfO₂ films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO₂ films. An interface layer (IL) formation occurs due to reaction at the HfO₂-Si interface for HfO₂ films deposited at Ts>200 ⁰C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO₂-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.

  15. Enhancement of longitudinal magneto-optical Kerr effect in HfO2/Co/HfO2/Al/silicon thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Shaoyin; Gao, Jinlong; Xia, Wenbin; Chen, Leyi; Tang, Yanmei; Li, Daoyong; Tang, Shaolong; Du, Youwei

    2014-06-01

    In this paper, the longitudinal magneto-optical Kerr effect (MOKE) properties of the quadrilayer structure HfO2/Co/HfO2/Al/silicon are investigated experimentally and theoretically. The cavity enhancement of HfO2 on the magneto-optical (MO) Kerr response of the quadrilayer has been confirmed. The giant longitudinal Kerr rotation of -1.04° at wavelength of 570 nm is tested when the cap and intermediate HfO2 layer thicknesses are 15 nm and 30 nm, respectively. The longitudinal Kerr rotation reversal in the wavelength range (440-720 nm) is also observed. It is strongly suggested that the enhanced MOKE stems from the optical reflection and interference of the quadrilayer structure.

  16. An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices

    NASA Astrophysics Data System (ADS)

    Chi, Xiaowei; Lan, Xiaoling; Lu, Chao; Hong, Haiyang; Li, Cheng; Chen, Songyan; Lai, Hongkai; Huang, Wei; Xu, Jianfang

    2016-03-01

    In situ remote N2 plasma pretreatment of Ge substrate before deposition of HfO2 is proved effective to reduce GeOx interlayer at the HfO2/Ge interface, resulting in a smaller capacitance equivalent oxide thickness, lower interface trap density and leakage current density for the metal/HfO2/n-Ge capacitors. However, it has no obvious impact on the metal/HfO2/p-Ge capacitors, showing a much higher interface trap density than that on n-Ge. The high equivalent permittivity of the HfO2 gate stacks (∼24.2) confirmed the removal of GeOx interlayer by N2 plasma pretreatment. In situ remote N2 plasma pretreatment is demonstrated perspective to make metal/HfO2/n-Ge MOSFET with scaling capacitance equivalent oxide thickness.

  17. Extremely small hole capture cross sections in HfO2/HfxSiyOz/p-Si structures

    NASA Astrophysics Data System (ADS)

    Yousif, M. Y. A.; Johansson, M.; Engström, O.

    2007-05-01

    Defects in Al /HfO2/HfxSiyOz/p-Si capacitors have been characterized using thermally stimulated current at temperatures between 30 and 300K. The hole activation energy and capture cross section were extracted from the results. The authors observed shallow traps that move with changing the discharging voltage, giving rise to activation energies in the range 0.03-0.14eV. Postmetallization anneal passivated these traps and a deeper trap appears with a significantly lower shift with the discharging voltage. Very small apparent capture cross sections (capture cross section times tunneling probability) have been extracted (10-26-10-18cm2). Simulations agree very well with experimental data.

  18. Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices

    NASA Astrophysics Data System (ADS)

    Recher, Shani; Yalon, Eilam; Ritter, Dan; Riess, Ilan; Salzman, Joseph

    2015-09-01

    Resistive switching in HfO2 in the sub-forming regime (before an electroforming step had been fully performed) is studied by electrical measurements using a very low current compliance of 1 μA. Electroforming under low current limitation results in reduced self-heating and partial filament formation. Following the reset process in this sub-forming regime, the device fully recovers its pristine resistive state. Furthermore, a dual bipolar resistive switching (DBRS) effect is observed, which we model as two antiparallel bipolar resistive switches. We attribute this phenomenon to intermittent formation and rupture of filaments originating from opposite electrodes. Following the rupture of a filament, originating from one of the electrodes, another filament originating from the opposite electrode is formed.

  19. The role of pulse length in target poisoning during reactive HiPIMS: application to amorphous HfO2

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Murdoch, B. J.; Treverrow, B.; Ross, A. E.; Falconer, I. S.; Kondyurin, A.; McCulloch, D. G.; Partridge, J. G.; McKenzie, D. R.; Bilek, M. M. M.

    2015-06-01

    In conventional reactive magnetron sputtering, target poisoning frequently leads to an instability that requires the reactive gas flow rate to be actively regulated to maintain a constant composition of the deposited layers. Here we demonstrate that the pulse length in high power impulse magnetron sputtering (HiPIMS) is important for determining the surface conditions on the target that lead to poisoning. By increasing the pulse length, a smooth transition can be achieved from a poisoned target condition (short pulses) to a quasi-metallic target condition (long pulses). Appropriate selection of pulse length eliminates the need for active regulation, enabling stable reactive magnetron sputter deposition of stoichiometric amorphous hafnium oxide (HfO2) from a Hf target. A model is presented for the reactive HiPIMS process in which the target operates in a partially poisoned mode with a distribution of oxide on its surface that depends on the pulse length.

  20. Submicrometer-Resolution Mapping of Ultraweak 355-nm Absorption in HfO2 Monolayers Using Photothermal Heterodyne Imaging

    SciTech Connect

    Papernov, S.; Tait, A.; Bittle, W.; Schmid, A.W.; Oliver, J.B.; Kupinski, P.

    2011-02-01

    Nanosecond-pulse UV-laser-damage initiation in multilayer coatings comprised from metal oxide as a high-index component, and silica oxide as a low-index material, is strongly linked to metal oxide. The nature of the absorbing species and their physical properties remain unknown because of extremely small sizes. Previous experimental evidence provided by high-resolution mapping of damage morphology points to a few-nanometer scale of these absorbers. This work demonstrates submicrometer mapping of 355-nm absorption in HfO2 monolayers using a recently developed photothermal heterodyne imaging technique. Comparison of absorption maps with spatial distribution of UV pulsed-laser–induced damage morphology allows one to better estimate the size and densities of nanoscale absorbing defects in hafnia thin films. Possible defect-formation mechanisms are discussed.

  1. The Development of HfO2-Rare Earth Based Oxide Materials and Barrier Coatings for Thermal Protection Systems

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Harder, Bryan James

    2014-01-01

    Advanced hafnia-rare earth oxides, rare earth aluminates and silicates have been developed for thermal environmental barrier systems for aerospace propulsion engine and thermal protection applications. The high temperature stability, low thermal conductivity, excellent oxidation resistance and mechanical properties of these oxide material systems make them attractive and potentially viable for thermal protection systems. This paper will focus on the development of the high performance and high temperature capable ZrO2HfO2-rare earth based alloy and compound oxide materials, processed as protective coating systems using state-or-the-art processing techniques. The emphasis has been in particular placed on assessing their temperature capability, stability and suitability for advanced space vehicle entry thermal protection systems. Fundamental thermophysical and thermomechanical properties of the material systems have been investigated at high temperatures. Laser high-heat-flux testing has also been developed to validate the material systems, and demonstrating durability under space entry high heat flux conditions.

  2. Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

    PubMed Central

    Long, Shibing; Perniola, Luca; Cagli, Carlo; Buckley, Julien; Lian, Xiaojuan; Miranda, Enrique; Pan, Feng; Liu, Ming; Suñé, Jordi

    2013-01-01

    Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). Here, the RESET switching of HfO2-based RRAM was statistically investigated in terms of the CF conductance evolution. The RESET usually combines an abrupt conductance drop with a progressive phase ending with the complete CF rupture. RESET1 and RESET2 events, corresponding to the initial and final phase of RESET, are found to be controlled by the voltage and power in the CF, respectively. A Monte Carlo simulator based on the thermal dissolution model of unipolar RESET reproduces all of the experimental observations. The results contribute to an improved physics-based understanding on the switching mechanisms and provide additional support to the thermal dissolution model. PMID:24121547

  3. Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

    NASA Astrophysics Data System (ADS)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Ajayan, J.

    2016-09-01

    This work covers the impact of dual metal gate engineered Junctionless MOSFET with various high-k dielectric in Nanoscale circuits for low power applications. Due to gate engineering in junctionless MOSFET, graded potential is obtained and results in higher electron velocity of about 31% for HfO2 than SiO2 in the channel region, which in turn improves the carrier transport efficiency. The simulation is done using sentaurus TCAD, ON current, OFF current, ION/IOFF ratio, DIBL, gain, transconductance and transconductance generation factor parameters are analysed. When using HfO2, DIBL shows a reduction of 61.5% over SiO2. The transconductance and transconductance generation factor shows an improvement of 44% and 35% respectively. The gain and output resistance also shows considerable improvement with high-k dielectrics. Using this device, inverter circuit is implemented with different high-k dielectric material and delay have been decreased by 4% with HfO2 when compared to SiO2. In addition, a significant reduction in power dissipation of the inverter circuit is obtained with high-k dielectric Dual Metal Surround Gate Junctionless Transistor than SiO2 based device. From the analysis, it is found that HfO2 will be a better alternative for the future nanoscale device.

  4. The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

    NASA Astrophysics Data System (ADS)

    Lan, Xuexin; Ou, Xin; Cao, Yanqiang; Tang, Shiyu; Gong, Changjie; Xu, Bo; Xia, Yidong; Yin, Jiang; Li, Aidong; Yan, Feng; Liu, Zhiguo

    2013-07-01

    The charge trapping memory devices based on different HfO2/Al2O3 nanolaminated charge trapping layers were prepared and investigated. The memory device with 6 interfaces HfO2/Al2O3 shows a memory window of 4.7 V in its capacitance-voltage curve and a better retention property. It was suggested that the thermal treatment would reduce the defects inside the bulk HfO2, but cause an inter-diffusion at the interface HfO2/Al2O3, which could create additional defects at HfO2/Al2O3 interface. Increasing the number of the interfaces could enhance the charge trapping capability of the devices. The band alignments were established to explain the variation trend of the memory window and the retention characteristics of the memory devices with different laminated structures.

  5. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  6. Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis

    NASA Astrophysics Data System (ADS)

    Zhang, Man-Hong

    2016-08-01

    Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy, between room temperature and 90 °C. The electron diffusion in HfO2 shows a multiple-step process. After injection, electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps: The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers. Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss. In this way, the diffusion coefficient and the average life time at different temperatures were extracted. A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2. Project supported by the National Natural Science Foundation of China (Grant No. 61176080).

  7. Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

    NASA Astrophysics Data System (ADS)

    Suzuki, Rena; Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang-Hyeon; Hoshii, Takuya; Maeda, Tatsuro; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi

    2012-10-01

    We have studied the impact of atomic-layer-deposition (ALD) temperature on the HfO2/InGaAs metal-oxide-semiconductor (MOS) interface with a comparison to the Al2O3/InGaAs interface. It is found that the interface properties such as the C-V characteristics and the interface trap density (Dit) and the interface structure of HfO2/InGaAs have strong dependence on the ALD temperature, while the Al2O3/InGaAs interfaces hardly depend on it. As a result, we have achieved the HfO2/InGaAs interfaces with low Dit comparable to that in the Al2O3/InGaAs interface by lowering the ALD temperature down to 200 °C or less. Also, we have found that As2O3 and Ga2O3 formed at the interface during ALD increase with a decrease in the ALD temperature. Combined with the ALD temperature dependence of the electrical characteristics, the better C-V characteristics and the lower Dit obtained at the lower ALD temperature can be explained by the As2O3 and Ga2O3 passivation of the HfO2/InGaAs interfaces, which is consistent with a reported theoretical result on the effective passivation of III-V MOS interfaces by trivalent oxides.

  8. Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate

    NASA Astrophysics Data System (ADS)

    Seya, Kyosuke; Ueno, Shunkichi; Nishimura, Toshiyuki; Jang, Byung-Koog

    2016-01-01

    An Al2O3-HfO2 eutectic EBC film was prepared on a SiC substrate by using the electric furnace heating and the optical zone melting methods. All of Al2O3 phase disappeared during the heating step at a temperature below the melting point, and all of the HfO2 phase reacted with the carbon and boron, which are included in SiC bulk as sintering agents, during the heating step at a temperature below the melting point. The thermal decomposition of the SiC phase, the reduction reaction of Al2O3 phase, the vaporization of the Al2O3 component, the reduction reaction of HfO2 and the formation of the HfC phase occurred at a temperature below the melting point. However, a highly dense HfC phase was formed on the SiC substrate. A rapid heating process becomes possible by using the optical zone melting method. A solidified film that was composed of a highly dense HfC layer as the intermediate layer and the Al2O3-HfO2 eutectic structure layer as the top coat was obtained by using the optical zone melting method.

  9. Electrical active defects in HfO2 based metal/oxide/metal devices

    NASA Astrophysics Data System (ADS)

    El Kamel, F.

    2016-01-01

    Dielectric as well as thermally stimulated current measurements were performed on metal/HfO2/Pt capacitors in order to study the electrical active defects in hafnia thin films. Two thermally activated relaxation processes have been carried out from both measurements. At low temperatures, the relaxation process can be ascribed to the shallow traps level localized at 0.65 eV and generally evidenced by the second ionization of oxygen vacancies. At high temperatures, the relaxation process arises from the diffusion of positively charged oxygen vacancies by overcoming an energetic barrier of about 1 eV.

  10. Fabrication of BaTiO3-Based Dielectrics for Ultrathin-Layer Multilayer Ceramic Capacitor Application by a Modified Coating Approach

    NASA Astrophysics Data System (ADS)

    Tian, Zhibin; Wang, Xiaohui; Zhang, Yichi; Song, Tae-Ho; Hur, Kang Heon; Li, Longtu

    2011-02-01

    The development of multilayer ceramic capacitor (MLCC) with base metal electrode (BME) requires precise controlling of the microstructure in a very thin dielectric layer (<1 µm). In this paper, a modified coating approach for high coverage of BaTiO3 powder for further MLCC application has been developed. The well dispersed and coated BaTiO3 powders are prepared and the relative mechanism has been discussed. Furthermore, the ultrafine grained X7R dielectric ceramics were produced by both conventional mixing and modified coating methods. Compared with the conventional mixing method, the ceramics prepared by the coating approach exhibited better TCC (the temperature coefficient of capacitance) performance, with dielectric constant over 2000 and grain size below 150 nm. In addition, it is found through the coating method the content of additives can be reduced to a relatively smaller amount than that required in conventional mixing method.

  11. Chemical states and electronic structure of a HfO(-2) / Ge(001) interface

    SciTech Connect

    Seo, Kang-ill; McIntyre, Paul C.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; Saraswat, Krishna C.; /Stanford U., Elect. Eng. Dept.

    2005-05-04

    We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

  12. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  13. Role of barrier layer on dielectric function of graphene double layer system at finite temperature

    NASA Astrophysics Data System (ADS)

    Patel, Digish K.; Ambavale, Sagar K.; Prajapati, Ketan; Sharma, A. C.

    2016-05-01

    We have theoretically investigated the static dielectric function of graphene double layer system (GDLS) at finite temperatures within the random phase approximation. GDLS has been suspended on a substrate and barrier layer of three different materials; h-BN, Al2O3 and HfO2 has been introduced between two graphene sheets of GDLS. We have reported dependence of the overall dielectric function of GDLS on interlayer distance and the effect of the dielectric environment at finite temperatures. Results show close relation between changing environment and behavior of dielectric constant of GDLS.

  14. Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack

    NASA Astrophysics Data System (ADS)

    Son, Seung-Woo; Park, Jung-Ho; Baek, Ji-Min; Kim, Jin Su; Kim, Do-Kywn; Shin, Seung Heon; Banerjee, S. K.; Lee, Jung-Hee; Kim, Tae-Woo; Kim, Dae-Hyun

    2016-09-01

    In this paper, we have fabricated and characterized In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al2O3/HfO2 (0.6/2 nm) bi-layer stack by ALD. The fabricated device with Lg = 4 μm exhibits a record maximum transconductance (gm_max) in excess of 520 μS/μm at >1 μm region, and reasonably good electrostatic integrity, such as SS = 110 mV/decade and DIBL = 43 mV/V. Also, we have investigated the gate length scaling behavior in terms of output, transconductance, and transfer characteristics. In particular, our devices feature very uniform values of the electrostatic integrity, such as SS = 100-110 mV/decade, VT = -0.25 V to -0.2 V and DIBL = 40-50 mV/V, as Lg decreases from 10 μm to 4 μm. Furthermore, we have explored the impact of source resistance (RS) onto the device characteristics of the InGaAs QW MOSFETs. In doing so, we have modeled both measured extrinsic transconductance (gm_ext) and intrinsic transconductance (gm_int) as a function of Lg.

  15. Influence of Si/SiO 2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

    NASA Astrophysics Data System (ADS)

    Lee, Yi-Mu; Wu, Yider

    2008-05-01

    In this work, the influence of Si/SiO 2 interface properties, interface nitridation and remote-plasma-assisted oxidation (RPAO) thickness (<1 nm), on electrical performance and TDDB characteristics of sub-2 nm stacked oxide/nitride gate dielectrics has been investigated using a constant voltage stress (CVS). It is demonstrated that interfacial plasma nitridation improves the breakdown and electrical characteristics. In the case of PMOSFETs stressed in accumulation, interface nitridation suppresses the hole traps at the Si/SiO 2 interface evidenced by less negative Vt shifts. Interface nitridation also retards hole tunneling between the gate and drain, resulting in reduced off-state drain leakage. In addition, the RPAO thickness of stacked gate dielectrics shows a profound effect in device performance and TDDB reliability. Also, it is demonstrated that TDDB characteristics are improved for both PMOS and NMOS devices with the 0.6 nm-RPAO layer using Weibull analysis. The maximum operating voltage is projected to be improved by 0.3 V difference for a 10-year lifetime. However, physical breakdown mechanism and effective defect radius during stress appear to be independent of RPAO thickness from the observation of the Weibull slopes. A correlation between trap generation and dielectric thickness changes based on the C- V distortion and oxide thinning model is presented to clarify the trapping behavior in the RPAO and bulk nitride layer during CVS stress.

  16. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.

    PubMed

    Zou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C; Liao, Lei

    2016-03-01

    A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance. PMID:26762171

  17. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    NASA Astrophysics Data System (ADS)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  18. Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    El Kamel, F.; Gonon, P.; Vallée, C.; Jorel, C.

    2009-09-01

    The impact of top-electrode metal on the conduction mechanisms of HfO2 thin films-based metal-insulator-metal capacitors was investigated at temperature ranging from 25 to 150 °C. Al, Cr, and Au are considered as top electrodes whereas Pt constitutes the commune bottom electrode. It was found for both capacitors that in the high field region, the leakage mechanism is electrode-limited. The leakage current, measured at the Al/HfO2 and Cr/HfO2 interfaces, was largely governed by Fowler-Nordheim tunneling in the whole measured temperature range. The barrier heights, at the Al/HfO2 and the Cr/HfO2 interfaces, were around 0.77 and 0.95 eV, respectively. In the case of Au/HfO2/Pt capacitors, the Au/HfO2 interface acts as a Schottky barrier with a height of 1.06 eV.

  19. Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?

    PubMed

    Bradley, Samuel R; Bersuker, Gennadi; Shluger, Alexander L

    2015-10-21

    Formation of metal rich conductive filaments and their rearrangements determine the switching characteristics in HfO2 based resistive random access memory (RRAM) devices. The initiation of a filament formation process may occur either via aggregation of pre-existing vacancies randomly distributed in the oxide or via generation of new oxygen vacancies close to the pre-existing ones. We evaluate the feasibility of vacancy aggregation processes by calculating the structures and binding energies of oxygen vacancy aggregates consisting of 2, 3 and 4 vacancies in bulk monoclinic (m)-HfO2 using density functional theory (DFT). We demonstrate that formation of neutral oxygen vacancy aggregates is accompanied by small energy gain, which depends on the size and shape of the aggregate. In the most strongly bound configurations, vacancies are unscreened by Hf cations and form voids within the crystal, with the larger aggregates having larger binding energy per vacancy (-0.11 to  -0.18 eV). The negatively charged di-vacancy was found to have similar binding energies to the neutral one, while the positively charged di-vacancy was found to be unstable. Thus aggregation process of either neutral or negatively charged oxygen vacancies is energetically feasible. PMID:26414778

  20. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    NASA Astrophysics Data System (ADS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-03-01

    Thermally driven atomic transport in HfO2/GeO2/substrate structures on Ge(001) and Si(001) was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO2/Ge interface. In addition, hafnium germanate is formed at 600 °C. Our data indicate that at 500 °C and above HfO2/GeO2 stacks are stable only if isolated from the Ge substrate.

  1. Novel integration of ultrathin Al2O3 with low-k dielectric as bilayer liner for capacitance optimization and stress mitigation in Cu through-silicon-via

    NASA Astrophysics Data System (ADS)

    Zhang, Lin; Li, Hong Yu; Shang, Yang; Yoo, Woosik; Yu, Hao; Tan, Chuan Seng

    2016-04-01

    Through-silicon-via (TSV) used in three-dimensional (3D) stacked dies must present small electrical parasitic, such as capacitance, to allow for low latency signal transmission. Stable TSV capacitance is desired to overcome the spatial circuit performance variation caused by non-uniform hot-spot heating. In this work, a novel combination of low-k with ultrathin Al2O3 bilayer liner is successfully integrated in the TSV. The TSV capacitance is reduced by ˜26% as compared to plasma-enhanced tetrahydrothosilicate (PETEOS) oxide liner. Stable TSV capacitance within the operating voltage of interest (˜0-5 V) is achieved by operating the TSV in a stable accumulation capacitance region. The positive shift in the flat-band voltage (ΔV FB = +19 V) is achieved by utilizing Al2O3-induced negative fixed charge (|Q f| = 1.3 × 1012 cm-2) at the Si/low-k interface. Leakage current density of the bilayer liner is improved to a level comparable with the PETEOS oxide liner post annealing [forming gas (N2/H2) at 350 °C for 2 h or 400 °C for 0.5 h]. Low-k material with a smaller elastic modulus improves the thermo-mechanical stress exerted on the surrounding Si substrate compared with PETEOS oxide.

  2. Subwavelength gratings on a free-standing HfO2 membrane for out-of-plane coupling of visible light

    NASA Astrophysics Data System (ADS)

    Liu, Qifa; Wang, Wei; Sa, Tongliang; He, Shumin; Li, Xin; Zhu, Gangyi; Wang, Yongjin

    2015-12-01

    Subwavelength grating couplers implemented on free-standing HfO2 membrane are proposed for out-of-plane coupling of visible light. The device is realized by double-side fabrication, which combines front patterning of grating grooves with a back-releasing of the Si substrate. The free-standing HfO2 membrane with diameter ~200 μm and thickness 200 nm is fabricated by including an auxiliary structure into the membrane to release residual stress. The fabricated grating parameters are characterized by scanning electron microscope and atomic force microscope. TE and TM light coupling into and out of the planar membrane waveguide is thoroughly investigated by a numerical finite element method simulation and experiment. Two pairs of gratings with different periods 350 and 330 nm, and filling factors 0.4 and 0.6, but the same etching depth 70 nm, were prepared. TE and TM light entered and exited the planar membrane through the grating coupling. The removal of the substrate suppresses radiation leakage. The coupling can be tuned by controlling the grating period, filling factor, and light incident angles. Free-standing HfO2 planar photonics in the visible spectrum may be used to realize specialized or highly sensitive sensors, beam splitters, or display components, and for particular wavelength extraction.

  3. Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

    PubMed Central

    Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

    2015-01-01

    The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions. Metal–insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal–insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal–insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal–insulator transitions, paving the pathway for developing functional field effect transistors. PMID:26657761

  4. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high- k LaTiON gate dielectric

    NASA Astrophysics Data System (ADS)

    Xu, H. X.; Xu, J. P.; Li, C. X.; Chan, C. L.; Lai, P. T.

    2010-06-01

    Ge Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La2O3 ratio, a suitable Ti/La2O3 ratio of 14.7% results in a high relative permittivity of 24.6, low interface-state density of 3.1×1011 eV-1 cm-2, and relatively low gate-leakage current density of 2.0×10-3 A cm-2 at a gate voltage of 1 V.

  5. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

    DOE PAGESBeta

    Ristau, Detlev; Papernov, S.; Kozlov, A. A.; Oliver, J. B.; Smith, C.; Jensen, L.; Gunster, S.; Madebach, H.

    2015-11-23

    The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2more » film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.« less

  6. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-films pairs

    DOE PAGESBeta

    Papernov, S.; Kozlov, A. A.; Oliver, J. B.; Smith, C.; Jensen, L.; Ristau, D.; Gunster, S.; Madebach, H.

    2015-11-23

    Here, the role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layermore » HfO2 film. Absorption in both types of films was measured using laser calorimetry and Photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.« less

  7. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    PubMed Central

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  8. CMUTs with high-K atomic layer deposition dielectric material insulation layer.

    PubMed

    Xu, Toby; Tekes, Coskun; Degertekin, F

    2014-12-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  9. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

    PubMed

    Wang, Lai-Guo; Qian, Xu; Cao, Yan-Qiang; Cao, Zheng-Yi; Fang, Guo-Yong; Li, Ai-Dong; Wu, Di

    2015-01-01

    We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory. PMID:25852426

  10. Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

    SciTech Connect

    Ren, H.; Shohet, J. L.; Cheng, S. L.; Nishi, Y.

    2010-05-10

    The effects of vacuum ultraviolet (VUV) (7.2 eV) and UV (4.9 eV) irradiation on hafnium-oxide dielectric layers were studied with electron-spin resonance to detect defect states. Silicon dangling-bond defects (P{sub b} centers) and positively charged oxygen vacancies (E{sup '} centers) were detected with g-factor fitting. VUV irradiation increases the level of P{sub b} states, while UV decreases the level of P{sub b} states but increases the level of E{sup '} states significantly. Rapid thermal annealing appears to mitigate these effects. Absolute values of the defect-state concentrations are presented.

  11. Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

    NASA Astrophysics Data System (ADS)

    Zhu, Shiyang; Nakajima, Anri

    2007-07-01

    Electrons trapped in the HfSiON gate dielectrics of n-channel metal-oxide-semiconductor field-effect transistors induced by positive bias temperature stress start to decay when the stress is interrupted or an opposite (recovery) voltage is applied. The decay begins with a quick detrapping within tens of nanoseconds followed by a slow detrapping. The quick detrapping depends on the recovery voltage and the trapping history, whereas the slow detrapping obeys approximately a logarithmic dependence on time with an almost identical slope before saturation. The observed detrapping behavior can be explained by a spatial and/or energetic distribution of trapped electrons in the HfSiON film. The device degradation under various dynamic stresses is found to be almost independent of frequency ranging from 0.001to1MHz, while it is slightly enhanced at 10MHz, probably due to insufficient recovery at the recovering half cycle.

  12. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

    NASA Astrophysics Data System (ADS)

    Mimura, Takanori; Katayama, Kiliha; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-08-01

    0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ-2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization-hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (Pr) of 9.6 and 10.8 μC/cm2 and coercive fields (Ec) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  13. The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-08-01

    InGaAs gate stacks comprising the moderate dielectric constant (k) Al2O3 have a significantly lower dispersion in accumulation in comparison to stacks with the high-k HfO2 of the same physical thickness. As a result, a HfO2/Al2O3 bi-layer structure seems attractive in terms of both high effective dielectric constant and low dispersion in accumulation. The influence of Al2O3 thickness on the dispersion was investigated in metal/HfO2/Al2O3/InGaAs gate stacks with a fixed overall dielectric thickness. An effective suppression of the dispersion with the increase of the Al2O3 thickness was observed. However, the Al2O3 thickness required for passivation of the dispersion in accumulation was significantly higher in comparison to both the border traps related tunneling distance in Al2O3 and the minimal thickness required for the Al2O3/InGaAs band offset stabilization. The phenomenon can be explained by the lower dielectric constant of Al2O3 film (compared to the subsequently deposited HfO2 layer), where Al2O3 dielectric constant dependence on the film thickness enhances the dispersion intensity. As a result, the guidelines for the passivation layer engineering are: maximization of both majority carriers band offsets and of the dielectric constant of the passivation layer.

  14. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  15. On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

    NASA Astrophysics Data System (ADS)

    Saadi, M.; Gonon, P.; Vallée, C.; Mannequin, C.; Grampeix, H.; Jalaguier, E.; Jomni, F.; Bsiesy, A.

    2016-03-01

    Resistance switching is studied in HfO2 as a function of the anode metal (Au, Cu, and Ag) in view of its application to resistive memories (resistive random access memories, RRAM). Current-voltage (I-V) and current-time (I-t) characteristics are presented. For Au anodes, resistance transition is controlled by oxygen vacancies (oxygen-based resistive random access memory, OxRRAM). For Ag anodes, resistance switching is governed by cation injection (Conducting Bridge random access memory, CBRAM). Cu anodes lead to an intermediate case. I-t experiments are shown to be a valuable tool to distinguish between OxRRAM and CBRAM behaviors. A model is proposed to explain the high-to-low resistance transition in CBRAMs. The model is based on the theory of low-temperature oxidation of metals (Cabrera-Mott theory). Upon electron injection, oxygen vacancies and oxygen ions are generated in the oxide. Oxygen ions are drifted to the anode, and an interfacial oxide is formed at the HfO2/anode interface. If oxygen ion mobility is low in the interfacial oxide, a negative space charge builds-up at the HfO2/oxide interface. This negative space charge is the source of a strong electric field across the interfacial oxide thickness, which pulls out cations from the anode (CBRAM case). Inversely, if oxygen ions migration through the interfacial oxide is important (or if the anode does not oxidize such as Au), bulk oxygen vacancies govern resistance transition (OxRRAM case).

  16. Low-cost bidirectional selector based on Ti/TiO2/HfO2/TiO2/Ti stack for bipolar RRAM arrays

    NASA Astrophysics Data System (ADS)

    Li, Yingtao; Li, Rongrong; Yuan, Peng; Gao, Xiaoping; Chen, Enzi

    2015-12-01

    In this paper, a low-cost Ti/TiO2/HfO2/TiO2/Ti stack structure is proposed as a selector for bipolar resistive random access memory (RRAM) cross-bar array applications. We demonstrate reproducible resistive switching characteristics with significant nonlinearity and good uniformity in the one selector and one resistor (1S1R) structure device that integrate the bidirectional selector with a bipolar Pt/Ti/HfO2/Pt RRAM device. These results provide a good point of reference for evaluating the potential low-cost applications in bipolar RRAM cross-bar array.

  17. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

    NASA Astrophysics Data System (ADS)

    Lin, T. D.; Chang, W. H.; Chu, R. L.; Chang, Y. C.; Chang, Y. H.; Lee, M. Y.; Hong, P. F.; Chen, Min-Cheng; Kwo, J.; Hong, M.

    2013-12-01

    Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO2 followed by ALD-Al2O3. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al2O3 (4 nm)/HfO2 (1 nm)/In0.53Ga0.47As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ˜10-8 A/cm2 at ±1 MV/cm, and thermodynamic stability at high temperatures. Al2O3 (3 nm)/HfO2 (1 nm)/In0.53Ga0.47As MOSFETs of 1 μm gate length, with 700 °C-800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (ID) of 1.5 mA/μm, transconductance (Gm) of 0.84 mS/μm, ION/IOFF of ˜104, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm2/V . s. The devices have also achieved very high intrinsic ID and Gm of 2 mA/μm and 1.2 mS/μm, respectively.

  18. High-dose neutron irradiation performance of dielectric mirrors

    DOE PAGESBeta

    Nimishakavi Anantha Phani Kiran Kumar; Leonard, Keith J.; Jellison, Jr., Gerald Earle; Snead, Lance Lewis

    2015-05-01

    The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al2O3/SiO2 and HfO2/SiO2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO2/SiO2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al2O3/SiO2 mirrors reduced to 44%, eventually failing at 4 dpa. Transmission electron microscopymore » (TEM) observation of the Al2O3/SiO2 specimens showed SiO2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO2/SiO2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al2O3/SiO2 mirror, though less evident in HfO2/SiO2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.« less

  19. The role of microstructure on the optical performance of neutron irradiated dielectric mirrors

    NASA Astrophysics Data System (ADS)

    Leonard, Keith J.; Jellison, Gerald E.; Kumar, N. A. P. Kiran; Snead, Lance L.

    2014-02-01

    Dielectric mirrors of HfO2/SiO2 and Al2O3/SiO2 designed for optimum reflectivity at 248 nm with 11 and 30 bi-layer coatings, respectively, survived irradiation to 0.1 dpa at 448 K without film cracking or delamination from their sapphire substrates. Subsequent annealing of the irradiated samples resulted in a loss of reflectivity in the HfO2/SiO2 mirror, while the Al2O3/SiO2 type remained unaffected. Microstructural changes that correlate to optical property changes of the mirror are investigated. The amorphous layers of the Al2O3/SiO2 mirror provide greater stability despite increased Al and Si interdiffusion across the film interfaces with increasing dose and post-irradiation annealing temperature. This interdiffusion may have limited the densification of SiO2 in the Al2O3/SiO2 mirror, but no interdiffusion was observed for the HfO2/SiO2 mirror. The thickness changes in the SiO2 layers of the HfO2/SiO2 mirror resulted in a shifting of the peak reflectivity to lower wavelengths. The formation of an amorphous Al-O layer within the substrate is observed in the 0.1 dpa irradiated HfO2/SiO2 mirror, which on further annealing at 573 and 673 K resulted in a buckling-type delamination failures in the mirrors producing a loss in reflectivity.

  20. Characterization of high-k gate dielectrics based on hafnium oxide and titanium oxide for CMOS application

    NASA Astrophysics Data System (ADS)

    Lee, Sanghyun

    Hafnium oxide, Titanium oxide, and ternary alloys with nitrided films of each of the above on Silicon and Germanium substrate were investigated in effort of understanding origins and various factors governing intrinsic band edge defects and interface trapped charges which are crucial to implent the high-k dielectrics into CMOS device below Electrical Equivalent Thickness (EOT) < 1nm. Novel design of atomic scale molecule was applied to achieve superb quality guided by the bond constrain theory. Tetrahedral bonding of Hf and Ti oxide in each Hf/Ti Silicon oxynitride gave the chemical stability upon annealing up to 1100°C. From the spectroscopic and electrical measurements, defect states were suppressed by reducing oxygen vacancy related defect states in Hf/Ti Silicon oxynitride. Conduction and valence band edge defect states were detected and reduced by limiting the thickness of HfO2 to 2 nm which is critical length for forming coherent inter-primitive pi bonding between Hf dpi-O ppi orbitals. As a result, Jahn-Teller d state term splittings were suppressed. The application of ultrathin Hf oxide and Hf Si oxynitride films onto Ge (100) and Ge (111) substrates resulted in the elimination of interfacial transition layer by removing Ge-N and possibly Ge-O bond after 800°C anneal. This could afford re-grown Ge epitaxial layer on top of Ge substrate which dramatically reduced the defect states between Hf Silicon oxynitride and Ge substrate. The gate leakage current for Hf Silicon oxynitride was lower than that on Si substrate.

  1. Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

    NASA Astrophysics Data System (ADS)

    Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2015-12-01

    The thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18O-tracers composing the GeO2 underlayers diffuse within the HfO2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlOx interlayers between the HfO2 and GeO2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.

  2. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.

    PubMed

    Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Kwon, Kwang-Ho

    2014-12-01

    The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions of Ar content in a feed gas (0-50% Ar) at fixed fluorocarbon gas content (50%), gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters as well as the differences in plasma chemistries for CF4- and CHF3-based plasmas were analyzed using Langmuir probe diagnostics and 0-dimensional plasma modeling. It was found that, in both gas systems, the non-monotonic (with a maximum at about 15-20% Ar) HfO2 etching rate does not correlate with monotonic changes of F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the HfO2 etching process is affected by the factors determining the formation and decomposition kinetics of the fluorocarbon polymer layer. These factor are the fluxes of CF(x) (x = 1, 2) radicals, O atoms and H atoms. PMID:25971118

  3. Loss/gain-induced ultrathin antireflection coatings

    PubMed Central

    Luo, Jie; Li, Sucheng; Hou, Bo; Lai, Yun

    2016-01-01

    Tradional antireflection coatings composed of dielectric layers usually require the thickness to be larger than quarter wavelength. Here, we demonstrate that materials with permittivity or permeability dominated by imaginary parts, i.e. lossy or gain media, can realize non-resonant antireflection coatings in deep sub-wavelength scale. Interestingly, while the reflected waves are eliminated as in traditional dielectric antireflection coatings, the transmitted waves can be enhanced or reduced, depending on whether gain or lossy media are applied, respectively. We provide a unified theory for the design of such ultrathin antireflection coatings, showing that under different polarizations and incident angles, different types of ultrathin coatings should be applied. Especially, under transverse magnetic polarization, the requirement shows a switch between gain and lossy media at Brewster angle. As a proof of principle, by using conductive films as a special type of lossy antireflection coatings, we experimentally demonstrate the suppression of Fabry-Pérot resonances in a broad frequency range for microwaves. This valuable functionality can be applied to remove undesired resonant effects, such as the frequency-dependent side lobes induced by resonances in dielectric coverings of antennas. Our work provides a guide for the design of ultrathin antireflection coatings as well as their applications in broadband reflectionless devices. PMID:27349750

  4. Loss/gain-induced ultrathin antireflection coatings.

    PubMed

    Luo, Jie; Li, Sucheng; Hou, Bo; Lai, Yun

    2016-01-01

    Tradional antireflection coatings composed of dielectric layers usually require the thickness to be larger than quarter wavelength. Here, we demonstrate that materials with permittivity or permeability dominated by imaginary parts, i.e. lossy or gain media, can realize non-resonant antireflection coatings in deep sub-wavelength scale. Interestingly, while the reflected waves are eliminated as in traditional dielectric antireflection coatings, the transmitted waves can be enhanced or reduced, depending on whether gain or lossy media are applied, respectively. We provide a unified theory for the design of such ultrathin antireflection coatings, showing that under different polarizations and incident angles, different types of ultrathin coatings should be applied. Especially, under transverse magnetic polarization, the requirement shows a switch between gain and lossy media at Brewster angle. As a proof of principle, by using conductive films as a special type of lossy antireflection coatings, we experimentally demonstrate the suppression of Fabry-Pérot resonances in a broad frequency range for microwaves. This valuable functionality can be applied to remove undesired resonant effects, such as the frequency-dependent side lobes induced by resonances in dielectric coverings of antennas. Our work provides a guide for the design of ultrathin antireflection coatings as well as their applications in broadband reflectionless devices. PMID:27349750

  5. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

    PubMed Central

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

    2015-01-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology. PMID:25683062

  6. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    PubMed

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  7. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  8. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

    PubMed

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Priya, Shashank

    2015-01-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology. PMID:25683062

  9. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  10. Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer

    NASA Astrophysics Data System (ADS)

    Im, Ki-Sik; Won, Chul-Ho; Vodapally, Sindhuri; Son, Dong-Hyeok; Jo, Young-Woo; Park, YoHan; Lee, Jae-Hoon; Lee, Jung-Hee

    2016-05-01

    The initially dry-etched GaN layer with trapezoidal cross-section was laterally etched along the <11 2 bar0> direction in the tetramethyl ammonium hydroxide (TMAH) solution to form a sidewall normal to the direction, which is corresponding to the (11 2 bar0) plane. On the other hand, the etched sidewall still maintains the trapezoidal shape with angle of 58.4° when etched along the <1 1 bar00> direction, which is corresponding to the (1 1 bar01) plane. The GaN lateral nanowires with two different types of cross-sections, Ω-shape which is connected to underlying thick buffer layer through very narrow neck region and rectangle shape which is completely separated from underlying buffer layer, were realized with second lateral TMAH wet etching along the <11 2 bar0> direction and by using the atomic layer deposited (ALD) HfO2 layer as a sidewall spacer. The shape is dependent on both the height of the second dry-etched GaN sidewall below the HfO2 spacer and the second wet etching time in TMAH solution. It was found that the dangling bond density at the surface of the crystal plane is responsible for the strong lateral anisotropic etching property of the GaN layer in TMAH solution.

  11. Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors

    NASA Astrophysics Data System (ADS)

    Yoon, Young Jun; Seo, Jae Hwa; Cho, Seongjae; Kwon, Hyuck-In; Lee, Jung-Hee; Kang, In Man

    2016-06-01

    In this paper, we propose and investigate a dual-spacer dielectric structure for realizing a sub-10 nm tunneling field-effect transistors (TFET) with excellent low-power (LP) and switching performance. The effects of the dual-spacer dielectric were assessed by analyzing the direct current (DC) and radio frequency (RF) performance of the GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction-based short channel TFETs. The dual-spacer dielectric that consists of hafnium oxide (HfO2) and silicon dioxide (SiO2) raises an energy-band on drain-side because of the fringe field induced by the high-k spacer dielectric HfO2. The raised energy-band suppresses direct band-to-band tunneling (BBT) through the channel region and drain-induced barrier thinning (DIBT) phenomenon with improvement in the off-state current (I off) and subthreshold swing (S). The dual-spacer dielectric also influences total gate capacitance (C gg) because the HfO2 in the dual-spacer dielectric increases out-fringe capacitance (C of) in gate-to-drain capacitance (C gd). Although the proposed TFET has a high C gd, the optimized TFET with the HfO2 length (L dual-spacer) of 30 nm achieves a lower intrinsic delay time (τ), a higher cut-off frequency (f T), and a higher maximum oscillation frequency (f max) owing to higher current performance and smaller gate-to-source capacitance (C gs).

  12. Ultrathin Dielectric Oxide Films On Silicon

    DOEpatents

    Klemperer, Walter G.; Lee, Jason; Mikalsen, Erik A.; Payne, David A.

    2004-09-21

    A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr.sub.4 (OPr.sup.n).sub.16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.

  13. Measurement and Modeling of Single Electron tunneling to Interface States in SiO^2 and HfO^2 Detected by Electrostatic Force

    NASA Astrophysics Data System (ADS)

    Bussmann, Ezra; Kim, Dong Jun; Armstrong, Bob; Williams, Clayton C.

    2004-03-01

    An Electrostatic Force Microscope in ultra-high vacuum is used to detect the resonant frequency shift of a cantilever probe as it approaches a silicon sample with an insulating oxide surface layer (SiO^2, HfO^2). When the oscillating probe is moved into the nanometer range of the oxide surface, discontinuous steps appear in the otherwise smooth frequency-distance curve. The discontinuities are abrupt changes in the electrostatic force gradient caused by movement of charge in the oxide. An electrostatic model of the probe/sample system has been constructed to determine the amount and location of the moving charge. Comparison of the model to the frequency shifts (few Hz) observed on samples with varied oxide thickness and composition reveals that the shifts are most likely caused by tunneling of single electrons to interface states in the oxide. The measurements and modeling will be described and compared.

  14. Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching.

    PubMed

    Yoon, Ji-Wook; Yoon, Jung Ho; Lee, Jong-Heun; Hwang, Cheol Seong

    2014-06-21

    The electrical resistance switching (RS) properties of amorphous HfO2 (a-HfO2) and crystalline HfO2 (c-HfO2) thin films grown on a TiN substrate via atomic layer deposition were examined using DC current-voltage (I-V) sweep and AC impedance spectroscopic (IS) analyses. The rapid thermal annealing of the a-HfO2 film at 500 °C under a N2 atmosphere for 5 min crystallized the HfO2 film and induced an interfacial TiON barrier layer. The a-HfO2 sample showed fluent bipolar RS performance with a high on/off ratio (∼ 500), whereas the c-HfO2 sample showed a much lower on/off ratio (<∼ 10), but its switching uniformity was better than that of a-HfO2. Such critical differences can be mainly attributed to the absence and presence of the TiON barrier layer in the a-HfO2 and c-HfO2 samples, respectively. The AC IS especially enabled the resistance states of the HfO2/Pt interface and the HfO2/TiN interface to be separately examined during one complete switching cycle of each sample. Although the Pt/c-HfO2 interface has a Schottky barrier in the pristine state, it disappeared once the c-HfO2 was electroformed and was not recovered even after the reset step. In contrast, the Pt/a-HfO2 interface partly recovered the Schottky barrier after the reset. PMID:24817626

  15. Improvement in the Cumulative Failure Distribution of High-k Dielectric Subjected to Nanoscale Stress by D2 Post-Deposition Annealing

    NASA Astrophysics Data System (ADS)

    Wu, You-Lin; Huang, Chiung-Yi; Liang, Cheng-Hsun

    2009-11-01

    By taking advantage of the small contact area of the conductive atomic force microscopy (CAFM) tip with the sample surface, and the powerful measurement capability of the semiconductor parameter analyzer, a nanoscale stress was applied to the atomic-layer-deposited (ALD) HfO2 high-k dielectrics prepared with N2, D2, and no post-deposition anneal (PDA), respectively. The statistical breakdown behavior of ALD HfO2 under nanoscale stresses was determined and is presented in this paper. It is evident that the cumulative failure distribution of breakdown voltage of high-k dielectrics under nanoscale CVS basically follows the Weibull statistics. We also found that the ALD HfO2 prepared with D2 PDA showed an obvious improvement in cumulative failure distribution when compared with those prepared with N2 PDA and no PDA. The result indicates that D2 PDA can substantially suppress the generation of defects during the application of nanoscale stress and improve the reliability of high-k dielectrics.

  16. An ultrathin directional carpet cloak based on generalized Snell's law

    NASA Astrophysics Data System (ADS)

    Zhang, Jing; Lei Mei, Zhong; Ru Zhang, Wan; Yang, Fan; Jun Cui, Tie

    2013-10-01

    Based on generalized Snell's law, we propose an ultrathin directional carpet cloak operating in the reflection geometry. The cloak is constructed by two identical ultrathin metal-backed dielectric slabs with metallic "H" patterns on the other sides to form a triangular region. When put on an infinite ground plane and illuminated by electromagnetic waves from overhead, it can manipulate the reflected wavefronts to mimic the infinite ground plane. We fabricate a microwave sample and perform near-field scanning experiments to verify the cloaking effect. The measurement results are in good agreement with full-wave simulations and theoretical analysis.

  17. Roads to ultrathin silicon oxides

    NASA Astrophysics Data System (ADS)

    Morgen, P.; Bahari, A.; Robenhagen, U.; Andersen, J. F.; Hansen, J.-K.; Pedersen, K.; Rao, M. G.; Li, Z. S.

    2005-01-01

    Ultrathin gate dielectrics for complementary metal-oxide-semiconductor (CMOS) devices, with suitable structural and electrical properties, are crucial for the further development of silicon based microelectronics. The effective (SiO2-equivalent) thickness of 10 A˚ or below needed in the next generations of CMOS devices has been found too low to prevent tunneling, and leakage, with current processes for SiO2 based gate insulators. Before abandoning SiO2 completely, however, there are good reasons to look for improved procedures or alternative processes to grow or form ultrathin SiO2 films on silicon, and possible improvements through the controlled addition of nitrogen. The present article initially describes an attempt to grow ultrathin oxides in a furnace, but this was limited to 50-A˚-thick layers or above. It then unveils some particularly simple, easily controlled, low-thermal budget, low-pressure based processes for thinner oxide layers, which have not been met earlier. These later processes are all done in an ultrahigh vacuum (UHV) based environment, starting from a clean and perfectly ordered Si surface. Thus we formed the thinnest possible (~4 A˚) uniformly covering oxide layers on the Si(111) and Si(001) surfaces. They are made very simply from cycles of oxygen adsorption at room temperature and short anneals, and are self-saturating at this thickness. Following these processes we explored isothermal methods in UHV at low temperatures and pressures. Such processes, at low pressures, were found to lead to a universal, self-limiting growth of an approximately 7-A˚-thick oxide at a range of temperatures between 300 and 700 °C. Further, up to about 10 A˚ oxides are grown in a series of steps, in each of which a layer of freshly deposited Cs on top of already grown oxide is retaining oxygen on this otherwise passivated surface. The Cs layer also catalyzes oxidation during a subsequent rapid annealing step. Higher thicknesses (up to 50 A˚) are obtained by

  18. Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations

    NASA Astrophysics Data System (ADS)

    Fischer, Dominik; Kersch, Alfred

    2008-10-01

    By means of ab initio simulations we investigate the influence of dopants (Si, C, Ge, Sn, Ti, and Ce) on the transition from the monoclinic to the tetragonal phase in HfO2. In this study we focus first on the internal energy only, an approach common to ab initio simulations. In the second step we go beyond this approach in considering the Helmholtz free energy by additionally taking into account the contribution of the phonon density of states. Finally we discuss the change in transition temperature in the regime of thin films based on an empirical model. We find that both the contributions of the internal energy and phonons can be understood in terms of a model relying on the ionic radius of the dopants. Among the investigated dopants silicon is identified to promote the tetragonal phase most efficiently. The effectiveness of the various dopants is compared on the basis of a qualitative phase diagram for doping concentrations up to ˜12%.

  19. Field dependent electrical conduction in HfO2/SiO2 gate stack for before and after constant voltage stressing

    NASA Astrophysics Data System (ADS)

    Sahoo, S. K.; Misra, D.

    2011-10-01

    The electrical conduction mechanisms contributing to the leakage current at different field regions and different temperatures have been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO2/P-Si nMOS capacitor in the temperature range from 25 °C to 125 °C, taken before stressing and in the temperature range of 25 °C to 65 °C after constant voltage stressing (CVS) at 3 V suggests that the Poole-Frenkel mechanism is the dominant conduction mechanism in the high field region. It was also observed that in the low electric field region Ohmic conduction is the dominant mechanism. Trap energy level (φt) of 0.36 eV, obtained from the Poole-Frenkel mechanism indicates that the defect is oxygen-related and is a good match with the reported value for V-/V-- in HfO2. Significant charge trapping at low level stress was observed whereas at high level and elevated temperature stressing suggests a variation of trap energy level indicating new defect formation. It is observed that the stress induced gate leakage current for the high temperature stressed devices is about three orders of magnitude more than that of room temperature stressed devices for the whole field range.

  20. How reduced vacuum pumping capability in a coating chamber affects the laser damage resistance of HfO2/SiO2 antireflection and high reflection coatings.

    DOE PAGESBeta

    Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

    2016-06-01

    Optical coatings with the highest laser damage thresholds rely on clean conditions in the vacuum chamber during the coating deposition process. A low base pressure in the coating chamber, as well as the ability of the vacuum system to maintain the required pressure during deposition, are important aspects of limiting the amount of defects in an optical coating that could induce laser damage. Our large optics coating chamber at Sandia National Laboratories normally relies on three cryo pumps to maintain low pressures for e-beam coating processes. However, on occasion, one or more of the cryo pumps have been out ofmore » commission. In light of this circumstance, we explored how deposition under compromised vacuum conditions resulting from the use of only one or two cryo pumps affects the laser-induced damage thresholds of optical coatings. Finally, the coatings of this study consist of HfO2 and SiO2 layer materials and include antireflection coatings for 527 nm at normal incidence, and high reflection coatings for 527 nm, 45⁰ angle of incidence (AOI), in P-polarization (P-pol).« less

  1. The effect of Ta ``oxygen scavenger layer'' on HfO2-based resistive switching behavior: termodynamic stability, electronic structure, and low-bias transport

    NASA Astrophysics Data System (ADS)

    Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; Nakamura, Hisao; Asai, Yoshihiro; Heinonen, Olle

    Metal-oxide-metal heterostructures are promising candidates for next-generation random access memories, which exhibit reversible resistive switching between high- and low-conductance states. Recent experimental work showed that inserting a metallic `oxygen scavenger layer' between TiN electrode and HfO2 significantly improves device switching performance. We show, using atomistic modeling within the GGA +U scheme of Density Functional Theory, that a Ta oxygen scavenger layer significantly enhances the thermodynamic stability of depleting oxygen from the oxide. Furthermore, the presence of a Ta layer reduces the dependence of the Schottky barrier heights on the location of the oxygen removed from the oxide matrix. Finally, the Schottky barrier height has a very small effect on the on-state low-bias conductance; this is more sensitive to the location of the depleted oxygen. We gratefully acknowledge the computing resources provided on Blues, a high-performance computing cluster operated by the Laboratory Computing Resource Center at Argonne National Laboratory. Work at Argonne was supported by U. S. DOE, Office of Science under Contract No. DE-AC02-06CH11357.

  2. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics.

    PubMed

    Park, Sukhyung; Cho, Kyoungah; Jung, Jungwoo; Kim, Sangsig

    2015-10-01

    In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics. PMID:26726373

  3. The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport.

    PubMed

    Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; Nakamura, Hisao; Asai, Yoshihiro; Heinonen, Olle

    2016-03-14

    Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high- and low-resistance states. Finally, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society. PMID:26902598

  4. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Yu, Ai-Fang; Qi, Qiong; Jiang, Peng; Jiang, Chao

    2009-07-01

    Carrier mobility enhancement from 0.09 to 0.59 cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.

  5. Study on the laser-induced damage performance of HfO2, Sc2O3, Y2O3, Al2O3 and SiO2 monolayer coatings

    NASA Astrophysics Data System (ADS)

    Zhu, Meiping; Yi, Kui; Li, Dawei; Qi, Hongji; Zhao, Yuanan; Liu, Jie; Liu, Xiaofeng; Hu, Guohang; Shao, Jianda

    2013-11-01

    The laser induced damage threshold (LIDT) and damage morphology of the monolayer coating are easily influenced by the finish condition of the substrate, which makes it difficult to compare the LIDT of different coating materials. In order to eliminate the influence of defect and sub-defect on the substrate, HfO2, Sc2O3, Y2O3, Al2O3 and SiO2 monolayer coatings were prepared on 1064 nm HfO2/SiO2 high reflection coatings, using conventional e-beam deposition. The LIDT, as well as the damage morphology after laser irradiation at wavelength of 1064 nm, was measured and compared with that of the monolayer coating deposited on BK7 glass substrate.

  6. Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

    PubMed

    Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

    2014-02-01

    High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery. PMID:24508952

  7. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    NASA Astrophysics Data System (ADS)

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  8. Thermal Conductivity and Stability of HfO2-Y2O3 and La2Zr2O7 Evaluated for 1650 Deg C Thermal/Environmental Barrier Coating Applications

    NASA Technical Reports Server (NTRS)

    Zhu, Dong-Ming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal and environmental barrier coating (T/EBC) materials for gas turbine ceramic matrix composite (CMC) combustor applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature stability of hot-pressed and plasma sprayed specimens with representative partially-stabilized and fully-cubic HfO2-Y2O3 compositions and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasmasprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC hexoloy or SiC/SiC CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications are also discussed.

  9. Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Long, R. D.; O'Connor, É.; Newcomb, S. B.; Monaghan, S.; Cherkaoui, K.; Casey, P.; Hughes, G.; Thomas, K. K.; Chalvet, F.; Povey, I. M.; Pemble, M. E.; Hurley, P. K.

    2009-10-01

    In this work results are presented on the structural analysis, chemical composition, and interface state densities of HfO2 thin films deposited by atomic layer deposition (ALD) from Hf[N(CH3)2]4 and H2O on In0.53Ga0.47As/InP substrates. The structural and chemical properties are investigated using high resolution cross-sectional transmission electron microscopy and electron energy loss spectroscopy. HfO2 films (3-15 nm) deposited on In0.53Ga0.47As are studied following a range of surface treatments including in situ treatment of the In0.53Ga0.47As surface by H2S exposure at 50-350 °C immediately following the metal organic vapor phase epitaxy growth of the In0.53Ga0.47As layer, ex situ treatment with (NH4)2S, and deposition on the native oxides of In0.53Ga0.47As with no surface treatment. The structural analysis indicates that the In0.53Ga0.47As surface preparation prior to HfO2 film deposition influences the thickness of the HfO2 film and the interlayer oxide. The complete interfacial self-cleaning of the In0.53Gas0.47As native oxides is not observed using an ALD process based on the Hf[N(CH3)2]4 precursor and H2O. Elemental profiling of the HfO2/In0.53Ga0.47As interface region by electron energy loss spectroscopy reveals an interface oxide layer of 1-2 nm in thickness, which consists primarily of Ga oxides. Using a conductance method approximation, peak interface state densities in the range from 6×1012 to 2×1013 cm-2 eV-1 are estimated depending on the surface preparation.

  10. Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations

    NASA Astrophysics Data System (ADS)

    Kothari, Shraddha; Joishi, Chandan; Ghosh, Sayantan; Biswas, Dipankar; Vaidya, Dhirendra; Ganguly, Swaroop; Lodha, Saurabh

    2016-07-01

    We demonstrate improved Ge n-channel gate stack performance versus HfO2 using HfAlO high-k dielectric for a wide (1.5–33%) range of Al% and post-high-k-deposition annealing (PDA) at 400 °C. Addition of Al to HfO2 is shown to mitigate degradation of the GeO2/Ge interface during PDA. HfAlO stacks with an equivalent oxide thickness (EOT) of 8 nm and large Al% exhibit improved transistor mobility (1.8 times higher) and midgap D it (2 times lower), whereas thin (1.9 nm) EOT HfAlO stacks show reduced gate leakage J g (by 10 times) and D it (by 1.5 times) and 1.6 times higher mobility for Al% as low as 1.5% at matched EOT.

  11. Ultra-thin multilayer capacitors.

    SciTech Connect

    Renk, Timothy Jerome; Monson, Todd C.

    2009-06-01

    The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report details some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation.

  12. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

    NASA Astrophysics Data System (ADS)

    Kent, Tyler; Tang, Kechao; Chobpattana, Varistha; Negara, Muhammad Adi; Edmonds, Mary; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi; McIntyre, Paul; Kummel, Andrew C.

    2015-10-01

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher Cmax hypothesized to be a result of poor nucleation of HfO2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low Dit high Cox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  13. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces.

    PubMed

    Kent, Tyler; Tang, Kechao; Chobpattana, Varistha; Negara, Muhammad Adi; Edmonds, Mary; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi; McIntyre, Paul; Kummel, Andrew C

    2015-10-28

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C(max) hypothesized to be a result of poor nucleation of HfO2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D(it) high C(ox) MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared. PMID:26520547

  14. Ultrathin zoom telescopic objective.

    PubMed

    Li, Lei; Wang, Di; Liu, Chao; Wang, Qiong-Hua

    2016-08-01

    We report an ultrathin zoom telescopic objective that can achieve continuous zoom change and has reduced compact volume. The objective consists of an annular folded lens and three electrowetting liquid lenses. The annular folded lens undertakes the main part of the focal power of the lens system. Due to a multiple-fold design, the optical path is folded in a lens with the thickness of ~1.98mm. The electrowetting liquid lenses constitute a zoom part. Based on the proposed objective, an ultrathin zoom telescopic camera is demonstrated. We analyze the properties of the proposed objective. The aperture of the proposed objective is ~15mm. The total length of the system is ~18mm with a tunable focal length ~48mm to ~65mm. Compared with the conventional zoom telescopic objective, the total length has been largely reduced. PMID:27505830

  15. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Byun, Youngchol; Wallace, Robert M.; Kim, Jiyoung

    2016-05-01

    The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al2O3 incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al2O3 phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  16. Nanoscale electrochemistry using dielectric thin films as solid electrolytes.

    PubMed

    Valov, Ilia; Lu, Wei D

    2016-08-01

    It is now well known that at the nanoscale matters behave differently compared to bulk phases. Increased reactivity, deviations in structural, thermodynamic and kinetic properties make nanoscale materials and processes attractive for both fundamental research and applications. Here we show that nanometer thin films of materials with dielectric properties at the macroscopic level such as SiO2, Ta2O5 and HfO2 behave as solid electrolytes and exhibit evident ionic transport and electrochemical redox reactions. Experimental studies demonstrate that classical electrochemical potentiodynamic and steady state methods can be used to study the mass and charge transport at the nanoscale. We believe these reported properties of nanomatter open new opportunities for fundamental research and applications. PMID:27150952

  17. Deviation from bulk behaviour in the cold crystallization kinetics of ultrathin films of poly(3-hydroxybutyrate)

    NASA Astrophysics Data System (ADS)

    Napolitano, S.; Wübbenhorst, M.

    2007-05-01

    The cold crystallization kinetics of ultrathin films of poly(3-hydroxybutyrate) (PHB) have been investigated by dielectric spectroscopy. Upon reduction of the film thickness, a lowering of the Avrami exponent accompanied by an increase of the crystallization time was observed. The experimental results are analysed in terms of reduction of the total number of nuclei involved in the crystallization process.

  18. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.

    PubMed

    Chang, Hsiao-Yu; Yang, Shixuan; Lee, Jongho; Tao, Li; Hwang, Wan-Sik; Jena, Debdeep; Lu, Nanshu; Akinwande, Deji

    2013-06-25

    While there has been increasing studies of MoS2 and other two-dimensional (2D) semiconducting dichalcogenides on hard conventional substrates, experimental or analytical studies on flexible substrates has been very limited so far, even though these 2D crystals are understood to have greater prospects for flexible smart systems. In this article, we report detailed studies of MoS2 transistors on industrial plastic sheets. Transistor characteristics afford more than 100x improvement in the ON/OFF current ratio and 4x enhancement in mobility compared to previous flexible MoS2 devices. Mechanical studies reveal robust electronic properties down to a bending radius of 1 mm which is comparable to previous reports for flexible graphene transistors. Experimental investigation identifies that crack formation in the dielectric is the responsible failure mechanism demonstrating that the mechanical properties of the dielectric layer is critical for realizing flexible electronics that can accommodate high strain. Our uniaxial tensile tests have revealed that atomic-layer-deposited HfO2 and Al2O3 films have very similar crack onset strain. However, crack propagation is slower in HfO2 dielectric compared to Al2O3 dielectric, suggesting a subcritical fracture mechanism in the thin oxide films. Rigorous mechanics modeling provides guidance for achieving flexible MoS2 transistors that are reliable at sub-mm bending radius. PMID:23668386

  19. Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

    NASA Astrophysics Data System (ADS)

    Jin, Hyun Soo; Cho, Young Jin; Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong; Lee, Sang-Moon; Park, Jong-Bong; Yun, Dong-Jin; Kim, Seong Keun; Hwang, Cheol Seong; Park, Tae Joo

    2015-12-01

    Surface sulfur (S) passivation on InP substrate was performed using a dry process - rapid thermal annealing under H2S atmosphere for III-V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO2 film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process - (NH4)2S solution treatment. The H2S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH4)2S solution treatment, although S profiles at the interface of HfO2/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H2S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H2S annealing.

  20. Ultrathin metallized PBI paper

    NASA Technical Reports Server (NTRS)

    Chenevey, E. C.

    1978-01-01

    A study to determine the feasibility of preparing ultrathin papers with a target weight of 3.5 g/m squared from polybenzimidazole (PBI) fibrids was undertaken. Small hand sheets of target weight were fabricated. They were light brown, low density materials with sufficient strength to be readily handleable. Characterization of these sheets included strength, fold endurance, thermal gravimetric analysis in air and nitrogen and photomicrographs. Two different batches of PBI fibrids were studied and differences in fabrication performance were noted. In neither case could target weight papers be prepared using conventional paper making techniques.

  1. All-dielectric diffraction grating for multi-petawatt laser systems

    NASA Astrophysics Data System (ADS)

    Vyhlidka, Stepan; Kalinchenko, Galina; Kramer, Daniel; Lerer, Alexander; Rus, Bedrich

    2015-01-01

    All-dielectric grating with more than 98% efficiency over the reflective band of 40 nm with the central wavelength at 1053 nm is simulated for the angle of incidence 72 degrees. For the grating design we used the fact that chirped mirrors give wider reflective band than usual quarter-wavelength dielectric mirrors. Grating grooves and the very first layer under the grooves in our model is made of fused silica; underneath of the top layer we placed a chirped stack of 13 HfO2/SiO2 layers. Tolerances for groove depth and angle of incidence are estimated, optimal duty-cycle parameter is found out. Electric field distribution inside of the grating is also numerically studied. The model is simulated by two methods: numerical Fourier Modal Method in LightTrans Virtual Lab and semi-analytical Volume Integral Equation Method. The results obtained by both methods show excellent agreement.

  2. All-dielectric metamaterials

    NASA Astrophysics Data System (ADS)

    Jahani, Saman; Jacob, Zubin

    2016-01-01

    The ideal material for nanophotonic applications will have a large refractive index at optical frequencies, respond to both the electric and magnetic fields of light, support large optical chirality and anisotropy, confine and guide light at the nanoscale, and be able to modify the phase and amplitude of incoming radiation in a fraction of a wavelength. Artificial electromagnetic media, or metamaterials, based on metallic or polar dielectric nanostructures can provide many of these properties by coupling light to free electrons (plasmons) or phonons (phonon polaritons), respectively, but at the inevitable cost of significant energy dissipation and reduced device efficiency. Recently, however, there has been a shift in the approach to nanophotonics. Low-loss electromagnetic responses covering all four quadrants of possible permittivities and permeabilities have been achieved using completely transparent and high-refractive-index dielectric building blocks. Moreover, an emerging class of all-dielectric metamaterials consisting of anisotropic crystals has been shown to support large refractive index contrast between orthogonal polarizations of light. These advances have revived the exciting prospect of integrating exotic electromagnetic effects in practical photonic devices, to achieve, for example, ultrathin and efficient optical elements, and realize the long-standing goal of subdiffraction confinement and guiding of light without metals. In this Review, we present a broad outline of the whole range of electromagnetic effects observed using all-dielectric metamaterials: high-refractive-index nanoresonators, metasurfaces, zero-index metamaterials and anisotropic metamaterials. Finally, we discuss current challenges and future goals for the field at the intersection with quantum, thermal and silicon photonics, as well as biomimetic metasurfaces.

  3. All-dielectric metamaterials.

    PubMed

    Jahani, Saman; Jacob, Zubin

    2016-01-01

    The ideal material for nanophotonic applications will have a large refractive index at optical frequencies, respond to both the electric and magnetic fields of light, support large optical chirality and anisotropy, confine and guide light at the nanoscale, and be able to modify the phase and amplitude of incoming radiation in a fraction of a wavelength. Artificial electromagnetic media, or metamaterials, based on metallic or polar dielectric nanostructures can provide many of these properties by coupling light to free electrons (plasmons) or phonons (phonon polaritons), respectively, but at the inevitable cost of significant energy dissipation and reduced device efficiency. Recently, however, there has been a shift in the approach to nanophotonics. Low-loss electromagnetic responses covering all four quadrants of possible permittivities and permeabilities have been achieved using completely transparent and high-refractive-index dielectric building blocks. Moreover, an emerging class of all-dielectric metamaterials consisting of anisotropic crystals has been shown to support large refractive index contrast between orthogonal polarizations of light. These advances have revived the exciting prospect of integrating exotic electromagnetic effects in practical photonic devices, to achieve, for example, ultrathin and efficient optical elements, and realize the long-standing goal of subdiffraction confinement and guiding of light without metals. In this Review, we present a broad outline of the whole range of electromagnetic effects observed using all-dielectric metamaterials: high-refractive-index nanoresonators, metasurfaces, zero-index metamaterials and anisotropic metamaterials. Finally, we discuss current challenges and future goals for the field at the intersection with quantum, thermal and silicon photonics, as well as biomimetic metasurfaces. PMID:26740041

  4. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

    PubMed

    Chernikova, Anna; Kozodaev, Maksim; Markeev, Andrei; Negrov, Dmitrii; Spiridonov, Maksim; Zarubin, Sergei; Bak, Ohheum; Buragohain, Pratyush; Lu, Haidong; Suvorova, Elena; Gruverman, Alexei; Zenkevich, Andrei

    2016-03-23

    Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions. PMID:26931409

  5. Ultrathin flexible dual band terahertz absorber

    NASA Astrophysics Data System (ADS)

    Shan, Yan; Chen, Lin; Shi, Cheng; Cheng, Zhaoxiang; Zang, Xiaofei; Xu, Boqing; Zhu, Yiming

    2015-09-01

    We propose an ultrathin and flexible dual band absorber operated at terahertz frequencies based on metamaterial. The metamaterial structure consists of periodical split ring resonators with two asymmetric gaps and a metallic ground plane, separated by a thin-flexible dielectric spacer. Particularly, the dielectric spacer is a free-standing polyimide film with thickness of 25 μm, resulting in highly flexible for our absorber and making it promising for non-planar applications such as micro-bolometers and stealth aircraft. Experimental results show that the absorber has two resonant absorption frequencies (0.41 THz and 0.75 THz) with absorption rates 92.2% and 97.4%, respectively. The resonances at the absorption frequencies come from normal dipole resonance and high-order dipole resonance which is inaccessible in the symmetrical structure. Multiple reflection interference theory is used to analyze the mechanism of the absorber and the results are in good agreement with simulated and experimental results. Furthermore, the absorption properties are studied under various spacer thicknesses. This kind of metamaterial absorber is insensitive to polarization, has high absorption rates (over 90%) with wide incident angles range from 0° to 45° and the absorption rates are also above 90% when wrapping it to a curved surface.

  6. Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses

    NASA Astrophysics Data System (ADS)

    Kwak, Ho-Young; Kwon, Hyuk-Min; Jung, Yi-Jung; Kwon, Sung-Kyu; Jang, Jae-Hyung; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Lee, Song-Jae; Lee, Hi-Deok

    2013-01-01

    In this paper, electrical properties and reliability of high capacitance density Metal-Insulator-Metal (MIM) capacitor with sandwiched hafnium-based dielectric is analyzed using three kinds of voltage stress; constant voltage stress (CVS), unipolar voltage and bipolar voltage stresses. The fabricated MIM capacitor shows not only high capacitance density but also low leakage current density of about ˜10 nA/cm2 at room temperature and 1 V. The relative variation of capacitance (ΔC/C0) increases and the variation of voltage linearity (α/α0) gradually decreases with stress-time due to the charge trapping effect in the high-k dielectric. The relative variations of capacitance and voltage linearity show the greater change by the bipolar voltage stress than CVS and unipolar voltage stresses.

  7. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when integrated with advanced EBC top coats, showed promise to achieve 1500 C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and long-term durability.

  8. Chemical gating of epitaxial graphene through ultrathin oxide layers

    NASA Astrophysics Data System (ADS)

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-07-01

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting

  9. Investigation of metal oxide dielectrics for non-volatile floating gate and resistance switching memory applications

    NASA Astrophysics Data System (ADS)

    Chakrabarti, Bhaswar

    Floating gate transistor based flash memories have seen more than a decade of continuous growth as the prominent non-volatile memory technology. However, the recent trends indicate that the scaling of flash memory is expected to saturate in the near future. Several alternative technologies are being considered for the replacement of flash in the near future. The basic motivation for this work is to investigate the material properties of metal oxide based high-k dielectrics for potential applications in floating gate and resistance switching memory applications. This dissertation can be divided into two main sections. In the first section, the tunneling characteristics of the SiO2/HfO 2 stacks were investigated. Previous theoretical studies for thin SiO 2/ thick high-k stacks predict an increase in tunneling current in the high-bias regime (better programming) and a decrease in the low-bias regime (better retention) in comparison to pure SiO2 of same equivalent oxide thickness (EOT). However, our studies indicated that the performance improvement in SiO2/HfO2 stacks with thick HfO2 layer is difficult due to significant amount of charge traps in thick HfO2 layers. Oxygen anneal on the stacks did not improve the programming current and retention. X-ray photoelectron spectroscopy (XPS) studies indicated that this was due to formation of an interfacial oxide layer. The second part of the dissertation deals with the investigation of resistive switching in metal oxides. Although promising, practical applications of resistive random access memories (RRAM) require addressing several issues including high forming voltage, large operating currents and reliability. We first investigated resistive switching in HfTiOx nanolaminate with conventional TiN electrodes. The forming-free switching observed in the structures could be described by the quantum point contact model. The modelling results indicated that the forming-free characteristics can be due to a higher number of

  10. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    NASA Astrophysics Data System (ADS)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

    2016-06-01

    The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  11. Theoretical views on activation of methane catalyzed by Hf2+ and oxidation of CO (x(1)Σ(+)) by N2O (x(1)Σ(+)) Catalyzed by HfO2+ and TaO2+.

    PubMed

    Nian, Jingyan; Tie, Lu; Wang, Ben; Guo, Zhiguang

    2013-09-12

    The mechanisms of activation of CH4 catalyzed by (1/3)Hf(2+) and oxidation of CO by N2O catalyzed by (1/3)HfO(2+) or (2/4)TaO(2+) have been investigated using the B3LYP level of theory. For the activation of methane, the TSR (two-state reactivity) mechanism has been certified through the spin-orbit coupling (SOC) calculation and the Landau-Zener-type model. In the vicinity of the minimum energy crossing point (MECP), SOC equals 900.23 cm(-1) and the probability of intersystem crossing is approximately 0.62. Spin inversion makes the activation barrier decline from 1.63 to 0.57 eV. NBO analysis demonstrates that empty 6s and 5d orbitals of the Hf atom play the major role for the activation of C-H bonds. Finally, CH4 dehydrogenates to produce Hf-CH2(2+). For oxidation of CO by N2O catalyzed by HfO(2+) or TaO(2+), the covalent bonds between transition metal atoms and the oxygen atom restrict the freedom of valence electrons. Therefore, they are all SSR (single-state reactivity). The oxygen atom is directly extracted during the course of oxygen transfer, and its microscopic essence has been discussed. The detailed kinetic information of two catalytic cycles has been calculated by referencing the "energetic span (δE)" model. Finally, TOF(HfO(2+))/TOF(TaO(2+)) = 2.7 at 298.15 K, which has a good consistency with the experimental result. PMID:23947756

  12. HfO_2and ZrO2 : Comparison of Structures and Thermodynamic and Electronic Properties Based on Ab Initio Calculations and Experiment

    NASA Astrophysics Data System (ADS)

    Demkov, Alexander A.; Navrotsky, Alexandra

    2001-03-01

    The International Technology Roadmap for Semiconductors (ITRS) predicts that the strategy of scaling complementary metal-oxide-semiconductor (CMOS) devices will come to an abrupt end around the year 2012. The main reason for this will be the unacceptably high leakage current through the silicon dioxide gate with a thickness below 20 ÅFinding a gate insulator alternative to SiO2 has proven to be far from trivial. Hafnium and zirconium dioxides and silicates have been recently considered as gate dielectrics with intermediate dielectric constants. Hafnia and ziconia are important ceramic materials as well, and their phase relations are rather well studied. There is also interest in hafnia as a constituent of ceramic waste forms for plutonium, based on its refractory nature and high neutron absorption cross section. We use a combination of the ab-initio calculations and calorimetry to investigate thermodynamic and electronic properties of hafnia and zirconia. We describe the cubic to tetragonal phase transition in the fluorite structure by computing the total energy surface for zone-edge distortions correct to fourth order in the soft-mode displacement with the strain coupling renormalization included. We compare the two materials using some simple chemical concepts.

  13. InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

    NASA Astrophysics Data System (ADS)

    Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed A.; Ng, Tien K.; Ooi, Boon S.

    2015-10-01

    We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ˜1060-1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green-yellow-orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.

  14. Ultrathin antibiotic walled microcapsules.

    PubMed

    Khopade, Ajay J; Arulsudar, N; Khopade, Surekha A; Hartmann, J

    2005-01-01

    Ultrathin microcapsules comprised of anionic polyelectrolytes (PE) and a polycationic aminoglycoside (AmG) antibiotic drug were prepared by depositing PE/AmG multilayers on zinc oxide (ZnO) colloid particles using the layer-by-layer self-assembly technique and subsequently dissolving the ZnO templated cores. The polyelectrolytes, dextran sulfate sodium (DxS) and poly(styrenesulfonate) (PSS), were selected owing to their different backbone structure. An aminoglycoside, tobramycin sulfate (TbS), was used for studying DxS/TbS or PSS/TbS multilayer films. The multilayer growth on ZnO cores was characterized by alternating zeta potential values that were different for the DxS/TbS and PSS/TbS multilayers due to the PE chemistry and its interaction with Zn(2+) ions. Transmission and scanning electron microscopy provide evidence of PE/TbS multilayer coating on ZnO core particles. The slow acid-decomposition of the ZnO cores using weak organic acids and the presence of sufficient quantity of Zn(2+) in the dispersion were required to produce antibiotic multilayer capsules. There was no difference in the morphological characteristics of the two types of capsules; although, the yield for [PSS/TbS](5) capsules was significantly higher than for [DxS/TbS](5) capsules which was related to the physicochemical properties of DxS/TbS/Zn(2+) and PSS/TbS/Zn(2+) complexes forming the capsule wall. The TbS quantity in the multilayer films was determined using a quartz crystal microbalance and high performance liquid chromatography techniques which showed less TbS loading in both, capsules and multilayers on planar gold substrate, than the theoretical DxS:TbS or PSS:TbS stoichiometric ratio. The decomposition of the [PE/TbS](6) multilayers was fastest in physiological buffer followed by mannitol and water. The decomposition rate of the [PSS/TbS](6) multilayers was slower than [DxS/TbS](6) monolayers. The incomplete decomposition of DxS/TbS under saline conditions suggests the major role of

  15. Ultrathin and broadband high impedance surface absorbers based on metamaterial substrates.

    PubMed

    Pang, Yongqiang; Cheng, Haifeng; Zhou, Yongjiang; Li, Zenggnag; Wang, Jun

    2012-05-21

    An ultrathin and simultaneously broadband high impedance surface absorber based on a metamaterial (MM) substrate is presented at microwave frequencies. The MM substrate is designed using metallic split ring resonators (SRRs) vertically embedded into a dielectric slab. Both the simulated and experimental results display two absorption peaks and an expanded absorption bandwidth of less than -10 dB compared to conventional ultrathin absorbers. By analyzing the field distributions and the substrate impedance characteristics, it is found that this feature is mainly related to the LC resonance of the substrate caused by the embedded SRRs. Our results demonstrate the great feasibility of broadening the absorption bandwidth of the ultrathin high impedance surface absorbers by the MMs incorporation. PMID:22714239

  16. Ultrathin Planar Graphene Supercapacitors

    SciTech Connect

    Huang, Jingsong; Meunier, Vincent; Sumpter, Bobby G; Ajayan, Pullikel M; Yoo, Jung Joon; Balakrishnan, Kaushik; Srivastava, Anchal; Conway, Michelle; Reddy, Arava Leela Mohan; Yu, Jin; Vajtai, Robert

    2011-01-01

    With the advent of atomically thin and flat layers of conducting materials such as graphene, new designs for thin film energy storage devices with good performance have become possible. Here, we report an in-plane fabrication approach for ultrathin supercapacitors based on electrodes comprised of pristine graphene and multi-layer reduced graphene oxide. The in-plane design is straightforward to implement and exploits efficiently the surface of each graphene layer for energy storage. The open architecture and the effect of graphene edges enable even the thinnest of devices, made from as grown 1-2 graphene layers, to reach specific capacities up to 80 Fcm-2. While, much higher (394 Fcm-2) specific capacities are observed in case of multi-layered graphene oxide electrodes, owing to the better utilization of the available electrochemical surface area. The performances of devices with pristine as well as thicker graphene based structures are examined using a combination of experiments and model calculations. The demonstrated all solid-state supercapacitors provide a prototype for a broad range of thin-film based energy storage devices.

  17. Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO2 high-k stack

    NASA Astrophysics Data System (ADS)

    Lin, Chi-Chou; Kuo, Yue

    2015-03-01

    Electrical and optical properties of the solid state incandescent light emitting devices made of zirconium doped hafnium oxide high-k films with and without an embedded nanocrystalline CdSe layer on the p-type Si wafer have been studied. The broad band white light was emitted from nano sized conductive paths through the thermal excitation mechanism. Conductive paths formed from the dielectric breakdown have been confirmed from scanning electron microscopic and atomic force microscopic images and the secondary ion mass spectrometric elemental profiles. Si was diffused from the wafer to the device surface through the conductive path during the high temperature light emission process. There are many potential applications of this type of device.

  18. Chemical gating of epitaxial graphene through ultrathin oxide layers.

    PubMed

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-08-01

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal. PMID:26148485

  19. Properties of ferroelectric ultrathin films from first principles

    NASA Astrophysics Data System (ADS)

    Bin-Omran, Saad

    First-principles-based methods are used to determine the response of polarization to epitaxial strain in films made of BaTiO3 (BT) and Pb(Zr0.5Ti0.5)O3 (PZT). Unlike in BT films, the strength of this response as well as its sign dramatically depend on the film's thickness and electrical boundary conditions in PZT films. A phenomenological model provides a rationale for these findings. Moreover, we reveal the effect of the depolarizing field on the paraelectric-to-ferroelectric phase transition in BaTiO3 and PZT ultrathin films. We found that with decreasing the beta screening parameter (i.e., when increasing the depolarizing field) (i) the Curie temperature, Tc, linearly decreases; (ii) the dielectric maximum epsilonmax increases; (iii) the phase transition becomes less diffuse. Furthermore, we investigate the effect of mechanical boundary conditions on the paraelectric-to-ferroelectric phase transition in BaTiO3 and PZT ultrathin films. It is predicted that (i) the phase transition temperature (Tc) increases due to the applied compressive strain; (ii) the epitaxial strain decreases the dielectric maximum epsilon max at any given value of the screening parameter beta; (iii) the diffusive character of the transition is larger in compressive films than in freestanding systems at a fixed beta. Also, we reveal that the nature of all paraelectric-to-ferroelectric phase transitions in the BaTiO3 and PZT ultrathin films (that are under different electric and mechanical boundary conditions) is of second-order.

  20. Enzymatically active ultrathin pepsin membranes.

    PubMed

    Raaijmakers, Michiel J T; Schmidt, Thomas; Barth, Monika; Tutus, Murat; Benes, Nieck E; Wessling, Matthias

    2015-05-11

    Enzymatically active proteins enable efficient and specific cleavage reactions of peptide bonds. Covalent coupling of the enzymes permits immobilization, which in turn reduces autolysis-induced deactivation. Ultrathin pepsin membranes were prepared by facile interfacial polycondensation of pepsin and trimesoyl chloride. The pepsin membrane allows for simultaneous enzymatic conversion and selective removal of digestion products. The large water fluxes through the membrane expedite the transport of large molecules through the pepsin layers. The presented method enables the large-scale production of ultrathin, cross-linked, enzymatically active membranes. PMID:25779668

  1. Charge transport and structural dynamics in ultra-thin films of polymerized ionic liquids

    NASA Astrophysics Data System (ADS)

    Heres, Maximilian; Cosby, Tyler; Berdzinski, Stefan; Strehmel, Veronica; Benson, Roberto; Sangoro, Joshua

    Ion conduction and structural dynamics in a series of ultra-thin films of imidazolium based polymerized ionic liquids are investigated using broadband dielectric spectroscopy, atomic force microscopy, and ellipsometry. No alteration in the characteristic charge transport rate is observed between bulk sample and films as thin as 12nm. These results are discussed within the recent approaches proposed to explain the confinement effects on structural dynamics in polymers and low molecular weight ionic liquids. NSF DRM Polymers Program.

  2. Medium Energy Ion Scattering Study of Oxygen Diffusion-Reactions in High-k Dielectrics on Si

    NASA Astrophysics Data System (ADS)

    Goncharova, Lyudmila; Bersuker, Gennadi

    2005-03-01

    Understanding the thermodynamics and kinetics of film growth during fabrication of high-κ gate stacks is vital to establish atomic level control of interfacial layers and to minimize defects. Annealing such films in different atmospheres may lead to diffusion and reactions with significant consequences on the electrical properties. We have used high-resolution medium energy ion scattering in combination with isotope tracing to investigate oxygen transport in model systems, including Hf and Ce oxides. The reaction of oxygen (pO2=10-2 Torr) with HfO2(SiO2)x/Si films at 500^oC was dominated by oxygen isotopic exchange (not SiO2 interfacial growth). The oxygen exchange rate decreases with an increase of SiO2 fraction in Hf silicate films and is almost fully suppressed (at 500^oC) for a (HfO2):(SiO2)=1:1 film composition. This reaction saturated with time and appeared to be enhanced after film recrystallization. Annealing in a nitrogen-containing atmosphere result in reduced O^18 incorporation and exchange. In comparison to Hf dielectrics, Ce silicates exhibit rapid interface growth upon oxygen exposure. Incorporating nitrogen into the structure lowers the rate of subsequent oxygen diffusion and incorporation.

  3. Charge trapping properties of alternative high-kappa dielectrics in MOS devices

    NASA Astrophysics Data System (ADS)

    Zhou, Xing

    High-kappa dielectrics are promising candidates to replace SiO 2 in advanced integrated circuits in future space systems. Studies of the effects of ionizing radiation and bias-temperature stress (BTS) on high-kappa dielectrics were performed. Trapped charge densities are evaluated as functions of temperature and stress time. Prior radiation exposure enhances BTS-induced degradation in these devices. Worst-case responses in combined effects are positive (or zero) bias irradiation followed by NBTS for HfO2-based devices. Degradation due to oxide or interface trap-charge changes in magnitude with the bias polarity during switched-bias annealing either after irradiation or constant voltage stress (CVS). This demonstrates that metastable electron trapping (dominant during post-rad annealing) and hydrogen transport and reactions (dominant during post-CVS annealing) in the near-interfacial dielectric layers play significant roles in the defect formation process. Additional defect growth with time was observed as a result of additional charge injection through the gate stacks during the annealing process. These results provide insights into fundamental trapping properties of high-kappa dielectrics and can be used to help predict long-term reliability of these devices.

  4. How reduced vacuum pumping capability in a coating chamber affects the laser damage resistance of HfO2/SiO2 antireflection and high-reflection coatings

    NASA Astrophysics Data System (ADS)

    Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

    2015-11-01

    Optical coatings with the highest laser damage thresholds rely on clean conditions in the vacuum chamber during the coating deposition process. A low base pressure in the coating chamber, as well as the ability of the vacuum system to maintain the required pressure during deposition, are important aspects of limiting the amount of defects in an optical coating that could induce laser damage. Our large optics coating chamber at Sandia National Laboratories normally relies on three cryo pumps to maintain low pressures for e-beam coating processes. However, on occasion, one or more of the cryo pumps have been out of commission. In light of this circumstance, we decided to explore how deposition under compromised vacuum conditions resulting from the use of only one or two cryo pumps affects the laser-induced damage thresholds of optical coatings. The coatings of this study consist of HfO2 and SiO2 layer materials and include antireflection coatings for 527 nm at normal incidence, and high reflection coatings for 527 nm, 45° angle of incidence (AOI), in P-polarization (P-pol).

  5. Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

    PubMed

    Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

    2016-07-20

    To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism. PMID:27347693

  6. Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

    NASA Astrophysics Data System (ADS)

    Kobayashi, M.; Chen, P. T.; Sun, Y.; Goel, N.; Majhi, P.; Garner, M.; Tsai, W.; Pianetta, P.; Nishi, Y.

    2008-11-01

    The synchrotron radiation photoemission spectroscopic study was conducted to (a) investigate the surface chemistry of In0.53Ga0.47As and In0.52Al0.48As postchemical and thermal treatments, (b) construct band diagram, and (c) investigate the interface property of HfO2/In0.53Ga0.47As and HfO2/In0.52Al0.48As. Dilute HCl and HF etch remove native oxides on In0.53Ga0.47As and In0.52Al0.47As, whereas in situ vacuum annealing removes surface arsenic pileup. After the atomic layer deposition of HfO2, native oxides were considerably reduced compared to that in as-received epilayers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37±0.1 and 1.80±0.3eV for In0.53Ga0.47As and 3.00±0.1 and 1.47±0.3eV for In0.52Al0.47As, respectively.

  7. Electrical perturbations of ultrathin bilayers: role of ionic conductive layer.

    PubMed

    Nazaripoor, Hadi; Koch, Charles R; Bhattacharjee, Subir

    2014-12-16

    The effect of electrostatic force on the dynamics, morphological evolution, and drainage time of ultrathin liquid bilayers (<100 nm) are investigated for perfect dielectric-perfect dielectric (PD-PD) and ionic liquid-perfect dielectric (IL-PD) bilayers. The weakly nonlinear "thin film" equation is solved numerically to obtain spatiotemporal evolution of the liquid-liquid interface responses to transverse electric field. In order to predict the electrostatic component of conjoining/disjoining pressure acting on the interface for IL-PD bilayers, an analytical model is developed using the nonlinear Poisson-Boltzmann equation. It is found that IL-PD bilayers with electric permittivity ratio of layers (lower to top), εr, greater than one remain stable under an applied electric field. An extensive numerical study is carried out to generate a map based on εr and the initial mean thickness of the lower layer. This map is used to predict the formation of various structures on PD-PD bilayer interface and provides a baseline for unstable IL-PD bilayers. The use of an ionic liquid (IL) layer is found to reduce the size of the structures, but results in polydispersed and disordered pillars spread over the domain. The numerical predictions follow similar trend of experimental observation of Lau and Russel. (Lau, C. Y.; Russel, W. B. Fundamental Limitations on Ordered Electrohydrodynamic Patterning; Macromolecules 2011, 44, 7746-7751). PMID:25419880

  8. [Ultra-thin transnasal esophagogastroduodenoscopy].

    PubMed

    Kawai, Takashi; Yamamoto, Kei; Fukuzawa, Mari; Sakai, Yoshihiro; Moriyasu, Fuminori

    2010-07-01

    It is reported that ultra-thin transnasal esophagogastroduodenoscopy (TN-EGD) reduces pharyngeal discomfort and is more tolerable for the patients. Ultra-thin transnasal endoscopy has been reported as inferior to transoral conventional EGD (TO-EGD) in terms of image quality, suction, air insufflation and lens washing, due to the smaller endoscope caliber. TN-EGD should be conducted slowly, with short distance observation, and also with image-enhanced endoscopy. With reference to image-enhanced endoscopy, chromoendoscopy method (indigocarmine) is suitable for gastric neoplasm, on the other hand optical digital method (NBI) and digital method (i-scan, FICE) is suitable for esophageal neoplasm. TN-EGD is applied in various gastrointestinal (GI) procedures such as percutaneous endoscopic gastrostomy, nasoenteric feeding tube placement, endoscopic retrograde cholangiopancreaticography with nasobiliary drainage, long intestinal tube placement in small bowel obstruction, esophageal manometry. PMID:20662204

  9. Plasma enhanced atomic layer deposition of ultrathin oxides on graphene

    NASA Astrophysics Data System (ADS)

    Trimble, Christie J.; Zaniewski, Anna M.; Kaur, Manpuneet; Nemanich, Robert J.

    2015-03-01

    Graphene, a single atomic layer of sp2 bonded carbon atoms, possesses extreme material properties that point toward a plethora of potential electronic applications. Many of these possibilities require the combination of graphene with dielectric materials such as metal oxides. Simultaneously, there is interest in new physical properties that emerge when traditionally three dimensional materials are constrained to ultrathin layers. For both of these objectives, we explore deposition of ultrathin oxide layers on graphene. In this project, we perform plasma enhanced atomic layer deposition (PEALD) of aluminum oxide on graphene that has been grown by chemical vapor deposition atop copper foil and achieve oxide layers that are <1.5 nm. Because exposure to oxygen plasma can cause the graphene to deteriorate, we explore techniques to mitigate this effect and optimize the PEALD process. Following deposition, the graphene and oxide films are transferred to arbitrary substrates for further analysis. We use x-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy to assess the quality of the resulting films. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  10. Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices

    NASA Astrophysics Data System (ADS)

    Wang, Bin

    The aggressive scaling of smaller/faster logic and memory devices demands accurate reliability characterization and knowledge of the failure mechanisms of ultra-thin (<30 A) silicon dioxide (SiO 2) layers in the gates of metal-oxide semiconductor (MOS) structures. The increased occurrence of soft breakdown in ultra-thin oxide films necessitates the development of more sophisticated techniques to detect breakdown. One such technique is by interrupting stress and monitoring stress-induced leakage current (SILC) or interface state density (Dit). The effect of interrupting stress was carefully studied and determined not to affect device lifetime. A comprehensive time-dependent dielectric breakdown (TDDB) study was conducted on ultra-thin oxide over a temperature ranging from 220°C to 350°C to study temperature acceleration. The results of the study showed that both hard and soft breakdown modes exhibit the same temperature dependence. The choice of a failure model for time/charge to breakdown (tBD /QBD) is critical for accurate reliability extrapolation. In this work, two more experiments were carried out to clarify the current physical mechanisms responsible to dielectric wear-out. The first experiment investigated the effects of pulsed biased stress on device lifetime. A lifetime enhancement under bipolar pulse stress was observed. The results suggest that previously proposed mechanism of hole de-trapping in thick oxide may not be responsible for the lifetime increase observed here for ultra-thin oxides. The second experiment studied the effects of heavy ion on the reliability of ultra-thin SiO2. Annealing and electron injection experiments on irradiated devices with heavy ion implied that holes were significantly created and trapped inside SiO2 without causing the SiO2 to breakdown. The results from these two studies suggest that breakdown of ultra-thin oxides is not caused by holes and that the anode hole injection (AHI) model for constant voltage stress (CVS) is

  11. Excitons in ultrathin organic-inorganic perovskite crystals

    NASA Astrophysics Data System (ADS)

    Yaffe, Omer; Chernikov, Alexey; Norman, Zachariah M.; Zhong, Yu; Velauthapillai, Ajanthkrishna; van der Zande, Arend; Owen, Jonathan S.; Heinz, Tony F.

    2015-07-01

    We demonstrate the formation of large sheets of layered organic-inorganic perovskite (OIPC) crystals, as thin as a single unit cell, prepared by mechanical exfoliation. The resulting two-dimensional OIPC nanosheets of 2.4 nm thickness are direct semiconductors with an optical band gap of 2.4 eV. They exhibit unusually strong light-matter interaction with an optical absorption as high as 25% at the main excitonic resonance, as well as bright photoluminescence. We extract an exciton binding energy of 490 meV from measurement of the series of excited exciton states. The properties of the excitons are shown to be strongly influenced by the changes in the dielectric surroundings. The environmental sensitivity of these ultrathin OIPC sheets is further reflected in the strong suppression of a thermally driven phase transition present in the bulk crystals.

  12. Electron tunneling through ultrathin boron nitride crystalline barriers.

    PubMed

    Britnell, Liam; Gorbachev, Roman V; Jalil, Rashid; Belle, Branson D; Schedin, Fred; Katsnelson, Mikhail I; Eaves, Laurence; Morozov, Sergey V; Mayorov, Alexander S; Peres, Nuno M R; Neto, Antonio H Castro; Leist, Jon; Geim, Andre K; Ponomarenko, Leonid A; Novoselov, Kostya S

    2012-03-14

    We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. PMID:22380756

  13. Partitioning behavior and stabilization of hydrophobically coated HfO2, ZrO2 and Hfx Zr 1-x O2 nanoparticles with natural organic matter reveal differences dependent on crystal structure.

    PubMed

    Navarro, Divina A; Depner, Sean W; Watson, David F; Aga, Diana S; Banerjee, Sarbajit

    2011-11-30

    The interactions of engineered nanomaterials with natural organic matter (NOM) exert a profound influence on the mobilities of the former in the environment. However, the influence of specific nanomaterial structural characteristics on the partitioning and colloidal stabilization of engineered nanomaterials in various ecological compartments remains underexplored. Herein, we present a systematic study of the interactions of humic acid (HA, as a model for NOM) with monodisperse, well-characterized, ligand-passivated HfO(2), ZrO(2), and solid-solution Hf(x)Zr(1-x)O(2) nanoparticles (NPs). We note that mixing with HA induces the almost complete phase transfer of hydrophobically coated monoclinic metal oxide (MO) NPs from hexane to water. Furthermore, HA is seen to impart appreciable colloidal stabilization to the NPs in the aqueous phase. In contrast, phase transfer and aqueous-phase colloidal stabilization has not been observed for tetragonal MO-NPs. A mechanistic model for the phase transfer and aqueous dispersal of MO-NPs is proposed on the basis of evidence from transmission electron microscopy, ζ-potential measurements, dynamic light scattering, Raman and infrared spectroscopies, elemental analysis, and systematic experiments on a closely related set of MO-NPs with varying composition and crystal structure. The data indicate the synergistic role of over-coating (micellar), ligand substitution (coordinative), and electrostatic processes wherein HA acts both as an amphiphilic molecule and a charged chelating ligand. The strong observed preference for the phase transfer of monoclinic instead of tetragonal NPs indicates the importance of the preferential binding of HA to specific crystallographic facets and suggests the possibility of being able to design NPs to minimize their mobilities in the aquatic environment. PMID:21963173

  14. Synthesis, characterization and biological study on Cr 3+, ZrO 2+, HfO 2+ and UO 22+ complexes of oxalohydrazide and bis(3-hydroxyimino)butan-2-ylidene)-oxalohydrazide

    NASA Astrophysics Data System (ADS)

    El-Asmy, A. A.; El-Gammal, O. A.; Radwan, H. A.

    2010-09-01

    Cr 3+, ZrO 2+, HfO 2+ and UO 22+ complexes of oxalohydrazide (H 2L 1) and oxalyl bis(diacetylmonoxime hydrazone) [its IUPAC name is oxalyl bis(3-hydroxyimino)butan-2-ylidene)oxalohydrazide] (H 4L 2) have been synthesized and characterized by partial elemental analysis, spectral (IR; electronic), thermal and magnetic measurements. [Cr(L 1)(H 2O) 3(Cl)]·H 2O, [ZrO(HL 1) 2]·C 2H 5OH, [UO 2(L 1)(H 2O) 2] [ZrO(H 3L 2)(Cl)] 2·2H 2O, [HfO(H 3L 2)(Cl)] 2·2H 2O and [UO 2(H 2L 2)]·2H 2O have been suggested. H 2L 1 behaves as a monobasic or dibasic bidentate ligand while H 4L 2 acts as a tetrabasic octadentate with the two metal centers. The molecular modeling of the two ligands have been drawn and their molecular parameters were calculated. Examination of the DNA degradation of H 2L 1 and H 4L 2 as well as their complexes revealed that direct contact of [ZrO(H 3L 2)(Cl)] 2·2H 2O or [HfO(H 3L 2)(Cl)] 2·2H 2O degrading the DNA of Eukaryotic subject. The ligands and their metal complexes were tested against Gram's positive Bacillus thuringiensis (BT) and Gram's negative ( Escherichia coli) bacteria. All compounds have small inhibitory effects.

  15. Surface cleaning effects on reliability for devices with ultrathin oxides or oxynitrides

    NASA Astrophysics Data System (ADS)

    Lai, Kafai; Hao, Ming-Yin; Chen, Wei-Ming; Lee, Jack C.

    1994-09-01

    A new wafer cleaning procedure has been developed for ultra-thin thermal oxidation process (Ultrathin thermal oxides (48 angstrom) and oxynitrides grown in N2O (42 angstrom) were prepared using this new cleaning and other commonly used cleaning methods to investigate the effects of surface preparation on dielectric integrity. It has been found that this two-dip method produces dielectrics with reduced leakage current and stress-induced leakage current, which are believed to be the critical parameters for ultrathin oxides. Furthermore, this new cleaning procedure improves both intrinsic and defect-related breakdown as well as the uniformity of the current- voltage characteristics across a 4-inch wafer. The methanol/HF dip time has also been optimized. The improvement is believed to be due to enhanced silicon surface passivation by hydrogen, the reduced surface micro-roughness and the absence of native oxide.

  16. Preparation of patterned ultrathin polymer films.

    PubMed

    Yang, Huige; Su, Meng; Li, Kaiyong; Jiang, Lei; Song, Yanlin; Doi, Masao; Wang, Jianjun

    2014-08-12

    Though patterned ultrathin polymer films (<100 nm) are of great importance in the fields of sensors and nanoelectronic devices, the fabrication of patterned ultrathin polymer films remains a great challenge. Herein, patterned ultrathin polymer films are fabricated facilely on hydrophobic substrates with different hydrophilic outline patterns by the pinning of three-phase contact lines of polymer solution on the hydrophilic outlines. This method is universal for most of the water-soluble polymers, and poly(vinyl alcohol) (PVA) has been selected as a model polymer due to its biocompatibility and good film-forming property. The results indicate that the morphologies of ultrathin polymer films can be precisely adjusted by the size of the hydrophilic outline pattern. Specifically, patterned hydrophilic outlines with sizes of 100, 60, and 40 μm lead to the formation of concave-shaped ultrathin PVA films, whereas uniform ultrathin PVA films are formed on 20 and 10 μm patterned substrates. The controllabilities of morphologies can be interpreted through the influences of the slip length and coffee ring effect. Theoretical analysis shows that when the size of the hydrophilic outline patterns is smaller than a critical value, the coffee ring effect disappears and uniform patterned ultrathin polymer films can be formed for all polymer concentrations. These results provide an effective methodology for the fabrication of patterned ultrathin polymer films and enhance the understanding of the coffee ring effect. PMID:25066958

  17. Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k ṡ p-calculations

    NASA Astrophysics Data System (ADS)

    Konakov, A. A.; Filatov, D. O.; Korolev, D. S.; Belov, A. I.; Mikhaylov, A. N.; Tetelbaum, D. I.; Kumar, Mahesh

    2016-01-01

    Using the envelope-function approximation, the single-particle states of electrons and holes in spherical GaN nanocrystals embedded in different amorphous dielectric matrices (SiO2, Al2O3, HfO2 and Si3N4) have been calculated. Ground state energies of electrons and holes in GaN nanocrystals are determined using the isotropic approximation of the k ṡ p -Hamiltonian. All the ground state energies are found to increase with lowering the nanocrystal size and are proportional to the R-n, where R is the nanocrystal radius, n =1.5-1.9 for electrons and 1.7-2.0 for holes. The optical gap of GaN nanocrystals changes from 3.8 to 5 eV for the nanocrystal radius ranging from 3 to 1 nm.

  18. Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

    NASA Astrophysics Data System (ADS)

    Kukli, Kaupo; Aarik, Jaan; Ritala, Mikko; Uustare, Teet; Sajavaara, Timo; Lu, Jun; Sundqvist, Jonas; Aidla, Aleks; Pung, Lembit; Hârsta, Anders; Leskelä, Markku

    2004-11-01

    HfO2 films were atomic layer deposited from HfCl4 and H2O on Si(100) in the temperature range of 226-750°C. The films consisted of dominantly the monoclinic polymorph. Elastic recoil detection analysis revealed high residual chlorine and hydrogen contents (2-5at.%) in the films grown below 300-350°C. The content of residual hydrogen and chlorine monotonously decreased with increasing growth temperature. The effective permittivity insignificantly depended on the growth temperature and water partial pressure. Capacitance-voltage curves exhibited marked hysteresis especially in the films grown at 400-450°C, and demonstrated enhanced distortions likely due to the increased trap densities in the films grown at 700-750°C. Changes in water pressure led to some changes in the extent of crystallization, but did not induce any clear changes in the capacitance of the dielectric layer.

  19. UV protection filters by dielectric multilayer thin films on Glass BK-7 and Infrasil 301

    NASA Astrophysics Data System (ADS)

    Abdel-Aziz, M. M.; Azim, Osama A.; Abdel-Wahab, L. A.; Seddik, Mohamed M.

    2006-10-01

    The increasing use of Ultraviolet (UV) light in medicine, industrial environments, for cosmetic use, and even in consumer products necessitates that greater attention be paid to the potential hazards of this type of electromagnetic radiation. To avoid any adverse effects of exposure to this type of radiation, four suitable protection filters were produced to block three UV bands (UVA, UVB, and UVC). The design structure of the required dielectric multilayer filters was done by optical thin film technology using the absorbing property of UV radiation for the substrates and dielectric materials. The computer analyses of the multilayer filter formulas were prepared using Macleod Software for the production processes. The deposition technique was achieved on optical substrates (Glass BK-7 and Infrasil 301) by dielectric material combinations including Titanium dioxide (Ti 2O 3), Hafnium dioxide (HfO 2), and Lima (mixture of oxides SiO 2/Al 2O 3); deposition being achieved using an electron beam gun. The output results of the theoretical and experimental transmittance values for spectral band from 200 nm to 800 nm were discussed in four processes. To analyze the suitability for use in 'real world' applications, the test pieces were subjected to the durability tests (adhesion, abrasion resistance, and humidity) according to Military Standard MIL-C-675C and MIL-C-48497A.

  20. Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers

    PubMed Central

    Dorvel, Brian R.; Reddy, Bobby; Go, Jonghyun; Guevara, Carlos Duarte; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-01-01

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in Point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO2), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFET’s has been small oligonucleotides, more specifically microRNA (miRNA). MicroRNA’s are small RNA oligonucleotides which bind to messenger RNA’s, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO2 dielectric based silicon nanowires for biosensing applications. Here we demonstrate sensing of single stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100fM detection levels of miR-10b DNA analogue, with a theoretical limit of detection of 1fM. Moreover, the non-complementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform. PMID:22695179

  1. Microwave-assisted and gram-scale synthesis of ultrathin SnO2 nanosheets with enhanced lithium storage properties.

    PubMed

    Zhu, Youqi; Guo, Huizi; Zhai, Huazhang; Cao, Chuanbao

    2015-02-01

    The rational design and fabrication of SnO2-based anode materials could offer a powerful way of effectively alleviating their large volume variation and guaranteeing excellent reaction kinetics for electrochemical lithium storage. Herein, we present an ultrarapid, low-cost, and simple microwave-assisted synthesis of ultrathin SnO2 nanosheets at the gram-scale. The two-dimensional (2D) anisotropic growth depends on microwave dielectric irradiation coupled with surfactant structural direction, and is conducted under low-temperature atmospheric conditions. The ultrathin 2D nanostructure holds a great surface tin atom percentage with high activity, where the electrochemical reaction processes could be facilitated that highly dependent on the surface. Compared with 1D SnO2 nanorods, the ultrathin SnO2 nanosheets exhibit remarkably improved electrochemical lithium storage properties with a high reversible capacity of 757.6 mAh g(-1) at a current density of 200 mA g(-1) up to 40 cycles as well as excellent rate capability and cycling stability. Specifically, the ultrathin 2D nanosheet could significantly reduce ion diffusion paths, thus allowing faster phase transitions, while the sufficient external surface interspace and interior porous configuration could successfully accommodate the huge volume changes. Even more importantly, we develop a promising strategy to produce ultrathin SnO2 nanosheets to tackle their intrinsic problems for commercial applications. PMID:25594865

  2. Lithography-free transmission filters at ultraviolet frequencies using ultra-thin aluminum films

    NASA Astrophysics Data System (ADS)

    Li, Zhongyang; Butun, Serkan; Aydin, Koray

    2016-06-01

    Aluminum allows for significant plasmon responses in ultraviolet (UV) regime of spectrum, where conventional plasmonic materials such as silver and gold lack plasmonic behavior due to their inherent dissipative limitation from lower plasmon frequency and inter-band transition. Such UV plasmonic resonance based on aluminum nanostructures could be challenging due to the smaller feature size of nanoscale resonator and remarkable sensitivity to oxidization. Here we theoretically and experimentally demonstrate lithography-free transmission filters using triple layers of continuous ultra-thin Al and dielectric films. Our proposed transmission filter is a triple-layer Fabry–Perot cavity and operates from 2.5 to 5.5 eV with bandwidth down to 0.5 eV and transmission amplitude up to 50%. Such flat Al ultra-thin film coatings suggest the use of aluminum as low-cost UV filters and UV optoelectronics as well as structural coloring applications.

  3. Physicochemically functional ultrathin films by interfacial polymerization

    DOEpatents

    Lonsdale, H.K.; Babcock, W.C.; Friensen, D.T.; Smith, K.L.; Johnson, B.M.; Wamser, C.C.

    1990-08-14

    Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclosed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers. 3 figs.

  4. Physicochemically functional ultrathin films by interfacial polymerization

    DOEpatents

    Lonsdale, Harold K.; Babcock, Walter C.; Friensen, Dwayne T.; Smith, Kelly L.; Johnson, Bruce M.; Wamser, Carl C.

    1990-01-01

    Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclsoed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers.

  5. Ultra-Thin, Flexible Electronics

    NASA Technical Reports Server (NTRS)

    Holland, Brian; McPherson, Ryan; Zhang, Tan; Hou, Zhenwei; Dean, Robert; Johnson, R. Wayne; DelCastillo, Linda; Moussessian, Alina

    2008-01-01

    Thinned die can be used to realize ultra-thin flexible electronics for applications such as conformal and wearable electronics. Three techniques have been developed to achieve this goal using thinned die: die flip chip bonded onto flexible substrates, die laminated onto LCP films, and die embedded in polyimide. A key to achieving each of these techniques is the thinning of die to a thickness of 50 microns or thinner. Conventional CMP processing can be used to thin to 50 microns. At 50 microns, the active die become flexible and must be handled by temporarily bonding them to a holder die, for further processing. Once bonded face down to the holder die, the active die can be further thinned by DRIE etching the exposed backside. The thinned die can then been packaged in or on the flexible substrate.

  6. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors

    NASA Astrophysics Data System (ADS)

    Suri, Rahul

    The purpose of this research work was to investigate the surface passivation methods and metal gate/high-k dielectric gate stacks for metal-oxide-semiconductor devices (MOS) on III-V compound semiconductor materials -- (i) GaAs for future high-speed low-power logic devices and (ii) AlGaN/GaN heterostructure for future high-speed high-power devices. GaAs is a candidate material for high-mobility channel in a NMOS transistor to extend the CMOS scaling up to and beyond the 16-nm technology node. AlGaN/GaN heterostructure is useful in a MOS-high electron mobility transistor (MOS-HEMT) device for providing a high current-carrying two dimensional electron gas (2DEG) channel. The interaction of GaAs surface with atomic layer deposition of high- k dielectrics was investigated to gain fundamental insights into the chemical properties of GaAs surface oxides and high-k/GaAs interface. Electrical characterization of devices was performed to understand the impact of high-k/GaAs interface on MOS device characteristics in order to form a suitable metal/high-k/GaAs gatestack for future high-speed logic and power devices. Reduction of native oxides on GaAs was found to occur during atomic layer deposition (ALD) of high-k dielectrics- HfO2 and Al2O3/HfO 2 nanolaminates on GaAs. Reaction between ALD metal precursor and native oxides on GaAs was identified to be the cause for consumption of native oxides. It was established that the ALD growth temperature has a strong impact on this phenomenon. During post-dielectric annealing the residual arsenic oxides at the interface decomposed leading to an increase in the interfacial gallium oxides. Presence of gallium oxide, Ga2O3 was identified as a cause for observed frequency dispersion in MOS capacitance-voltage curves indicative of a high interface state density. The chemical properties of the AlGaN/GaN heterostructure surface prepared by wet chemical treatment using HCl/HF and NH4OH solutions were investigated and compared. Both HCl and

  7. Design and fabrication of multilayer dielectric gratings for spectral beam combining

    NASA Astrophysics Data System (ADS)

    Cho, Hyun-Ju; Kim, Hyun-Tae; Lee, Yong-Soo

    2015-08-01

    Metal gratings are mostly used on low energy optics, but it has low laser damage threshold. Spectral beam combining is a method to make high power laser beam using diffraction gratings. Multilayer dielectric (MLD) high reflectance mirror is designed for high efficiency gratings using HfO2 and SiO2 for high laser damage threshold. On the top of the mirror, polarization dependent SiO2 grating structure is simulated by finite domain time division (FDTD) method at 1055nm for spectral beam combining. To estimate the far field diffraction characteristics, we first calculate near field electromagnetic wave properties at the substrate region and these are transformed to angular diffraction characteristics at about 1 meter apart from the grating. Multilayer dielectric mirror is deposited by electron beam evaporation method at the substrate temperature 250°C. Four types of high efficiency MLD gratings are selected and these are fabricated by lithography and reactive ion etching method. To fabricate the designed submicron structure, 4X stepper is used for pattern formation on the photo resistor. We use fused silica as a substrate and additional dummy silicon wafer substrates are used for grating structure confirmation using scanning electron microscope. The diffraction efficiencies are measured and these are compared with simulated results.

  8. High-k dielectric characterization by VUV spectroscopic ellipsometry and X-ray reflection

    NASA Astrophysics Data System (ADS)

    Boher, P.; Evrard, P.; Piel, J. P.; Defranoux, C.; Fouere, J. C.; Bellandi, E.; Bender, H.

    2003-09-01

    In this study, we use vacuum UV spectroscopic ellipsometry (VUVSE) to characterize new high dielectric materials. Indeed, all the candidates for high k dielectrics become strongly absorbent when the wavelength is reduced down to 140nm. So, the correlation between thickness and refractive index is reduced in the VUV range and much more precise structural information can be deduced. HfO2, Al2O3 and mixed HfAlOx layers have been studied with and without thin SiO2 oxide at the interface. X-ray reflectometry (XRR) has been used to measure precisely the layer thickness and roughness. The two techniques are included in the same automated metrology system dedicated to 300mm technology which is also presented. We show in particular that VUVSE can detect the crystalline character of the layers and their composition can be measured in addition to the layer thickness. Results are compared to those obtained by transmission electron microscopy (TEM), x-ray fluorescence analysis (XRF) and x-ray photoemission (XPS).

  9. High-performance CdS:P nanoribbon field-effect transistors constructed with high-κ dielectric and top-gate geometry

    NASA Astrophysics Data System (ADS)

    Wu, Di; Jiang, Yang; Wang, Li; Li, Shanying; Wu, Bo; Lan, Xinzheng; Yu, Yongqiang; Wu, Chunyan; Wang, Zhuangbing; Jie, Jiansheng

    2010-03-01

    High-performance field-effect transistors (FETs) based on single phosphorus-doped n-type CdS nanoribbon with high-κ HfO2 dielectric and top-gate geometry were constructed. In contrast to the nano-FETs that were fabricated on SiO2/Si substrate with back-gate device configuration, the top-gate FETs exhibit a substantial improvement in performances, i.e., work voltage was reduced to a small value of within ±5 V, the subthreshold swing was reduced to 200 mV/dec and the Ion/Ioff ratio was increased by about six orders of magnitude. The top-gate CdS:P nano-FET shows high sensitivity upon light irradiation, revealing that the top-gate FETs are promising candidates for nanoelectronic and optoelectronic applications.

  10. Measurement of optical anisotropy in ultrathin films using surface plasmon resonance

    NASA Astrophysics Data System (ADS)

    Devanarayanan, V. P.; Manjuladevi, V.; Poonia, Monika; Gupta, R. K.; Gupta, Sanjeev K.; Akhtar, Jamil

    2016-01-01

    The optical phenomenon, surface plasmon resonance (SPR) is employed for the measurement of optical anisotropy in the ultrathin films fabricated through Langmuir-Blodgett (LB) and self-assembled monolayer (SAM) techniques onto 50 nm gold film supported on BK7 glass substrates. The resonance angle (RA) is measured using a home built setup in Kretschmann configuration. The LB films and SAM can provide a single layer of highly ordered and organized molecules on the two dimensional surface. If the film forming molecules are anisotropic, their organization in the LB films and SAM can yield an anisotropic film due to tilt of the molecules with respect to the surface normal. The SPR spectra are recorded for the two orthogonal directions of the film with respect to the plane of incidence. The spectra are simulated by modeling the Fresnel's reflection from 4-layers viz., prism, gold, ultrathin films and air; and the real and imaginary parts of refractive index are estimated. Our study shows the metallic and dielectric nature of the LB films of bundles of single walled carbon nanotubes (SWCNTs) when the long axis of SWCNTs are aligned parallel and perpendicular to plane of incidence, respectively. The optical anisotropy was estimated from the change in real part of refractive index (Δnr) of the ultrathin films measured in the orthogonal directions. In addition, we have also studied such optical anisotropy in the LB film of cadmium-stearate and self-assembled monolayer of octadecanethiol.

  11. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    NASA Astrophysics Data System (ADS)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-07-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication.

  12. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene.

    PubMed

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  13. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    PubMed Central

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  14. Program/erase injection current characteristics of a low-voltage low-power NROM using high-K materials as the tunnel dielectric

    NASA Astrophysics Data System (ADS)

    Cai, Yimao; Huang, Ru; Shan, Xiaonan; Li, Yan; Zhou, Falong; Wang, Yangyuan

    2006-04-01

    The program and erase injection current characteristics of a NROM with SiO2, HfO2, LaAlO3 and Al2O3 as the tunnel dielectric, respectively, are studied in this paper. Due to the lower electron and hole energy barriers introduced by LaAlO3, both the program and erase injection current densities of the NROM using LaAlO3 as the tunnel dielectric are increased dramatically. The injection efficiency is also improved significantly, which indicates that the introduction of LaAlO3 can lower the operation voltage of NROM cells. We show that the bit line voltage can be reduced to 3 V for both program and erase operations of NROM cells with LaAlO3 of 5 nm and 8 nm equivalent oxide thickness (EOT). This can greatly reduce the additional circuits to generate high voltages in a nonvolatile memory chip, meanwhile maintaining sufficient program/erase (P/E) performance and reliability. Our study also shows that the drain disturb is alleviated during programming and erasing the NROM cell with the LaAlO3 tunnel dielectric due to the lower operating voltages (VBL = 3 V). Hence a low-voltage low-power NROM flash memory device operation can be achieved by using LaAlO3 as the tunnel dielectric, due to the enhancement of the P/E injection current.

  15. Lithography-Free Broadband Ultrathin-Film Absorbers with Gap-Plasmon Resonance for Organic Photovoltaics.

    PubMed

    Choi, Minjung; Kang, Gumin; Shin, Dongheok; Barange, Nilesh; Lee, Chang-Won; Ko, Doo-Hyun; Kim, Kyoungsik

    2016-05-25

    Strategies to confine electromagnetic field within ultrathin film emerge as essential technologies for applications from thin-film solar cells to imaging and sensing devices. We demonstrate a lithography-free, low-cost, large-scale method to realize broadband ultrathi-film metal-dielectric-metal (MDM) absorbers, by exploiting gap-plasmon resonances for strongly confined electromagnetic field. A two-steps method, first organizing Au nanoparticles via thermal dewetting and then transferring the nanoparticles to a spacer-reflector substrate, is used to achieve broader absorption bandwidth by manipulating geometric shapes of the top metallic layer into hemiellipsoids. A fast-deposited nominal Au film, instead of a conventional slow one, is employed in the Ostwald ripening process to attain hemiellipsoidal nanoparticles. A polymer supported transferring step allows a wider range of dewetting temperature to manipulate the nanoparticles' shape. By incorporating circularity with ImageJ software, the geometries of hemiellipsoidal nanoparticles are quantitatively characterized. Controlling the top geometry of MDM structure from hemisphere to hemiellipsoid increases the average absorption at 500-900 nm from 23.1% to 43.5% in the ultrathin film and full width at half-maximum of 132-324 nm, which is consistently explained by finite-difference time-domain simulation. The structural advantages of our scheme are easily applicable to thin-film photovoltaic devices because metal electrodes can act as metal reflectors and semiconductor layers as dielectric spacers. PMID:27160410

  16. The jump-into-contact effect in biased AFM probes on dielectric films and its application to quantify the dielectric permittivity of thin layers

    NASA Astrophysics Data System (ADS)

    Revilla, Reynier I.

    2016-07-01

    The jump-into-contact (JIC) phenomenon in biased atomic force microscopy (AFM) probes on dielectric films is studied. The influence of the film thickness on the position at which the AFM tip collapses irreversibly into the sample surface was theoretically analyzed using a widely accepted analytical expression of the probe–sample electrostatic interaction force. It was demonstrated that for relatively high values of voltage (V > 10–20 V) applied between the probe and the substrate the cantilever deflection at the JIC is independent of the dielectric film thickness for thin–ultrathin layers (h < 10–50 nm). Under the same conditions the z–piezo distance at the JIC follows approximately a linear behavior with the film thickness. Based on this effect an empirical model was formulated to estimate the dielectric permittivity of thin/ultrathin dielectric films using the jump-into-contact distance. The procedure was successfully applied on thin PVD–SiO2 films, obtaining good agreement with a dielectric constant value previously reported for the same material.

  17. The jump-into-contact effect in biased AFM probes on dielectric films and its application to quantify the dielectric permittivity of thin layers.

    PubMed

    Revilla, Reynier I

    2016-07-01

    The jump-into-contact (JIC) phenomenon in biased atomic force microscopy (AFM) probes on dielectric films is studied. The influence of the film thickness on the position at which the AFM tip collapses irreversibly into the sample surface was theoretically analyzed using a widely accepted analytical expression of the probe-sample electrostatic interaction force. It was demonstrated that for relatively high values of voltage (V > 10-20 V) applied between the probe and the substrate the cantilever deflection at the JIC is independent of the dielectric film thickness for thin-ultrathin layers (h < 10-50 nm). Under the same conditions the z-piezo distance at the JIC follows approximately a linear behavior with the film thickness. Based on this effect an empirical model was formulated to estimate the dielectric permittivity of thin/ultrathin dielectric films using the jump-into-contact distance. The procedure was successfully applied on thin PVD-SiO2 films, obtaining good agreement with a dielectric constant value previously reported for the same material. PMID:27199351

  18. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    SciTech Connect

    Li, X. D.; Chen, T. P. Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-03-14

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε{sub 1}) and imaginary (ε{sub 2}) parts of the dielectric function decrease significantly, and ε{sub 2} shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies.

  19. Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

    SciTech Connect

    Kinyanjui, M. K. Kaiser, U.; Benner, G.; Pavia, G.; Boucher, F.; Habermeier, H.-U.; Keimer, B.

    2015-05-18

    We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presented approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.

  20. Ultrasound-responsive ultrathin multiblock copolyamide vesicles.

    PubMed

    Huang, Lei; Yu, Chunyang; Huang, Tong; Xu, Shuting; Bai, Yongping; Zhou, Yongfeng

    2016-03-01

    This study reports the self-assembly of novel polymer vesicles from an amphiphilic multiblock copolyamide, and the vesicles show a special structure with an ultrathin wall thickness of about 4.5 nm and a combined bilayer and monolayer packing model. Most interestingly, the vesicles are ultrasound-responsive and can release the encapsulated model drugs in response to ultrasonic irradiation. PMID:26878351

  1. Atomic Structure of Ultrathin Gold Nanowires.

    PubMed

    Yu, Yi; Cui, Fan; Sun, Jianwei; Yang, Peidong

    2016-05-11

    Understanding of the atomic structure and stability of nanowires (NWs) is critical for their applications in nanotechnology, especially when the diameter of NWs reduces to ultrathin scale (1-2 nm). Here, using aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM), we report a detailed atomic structure study of the ultrathin Au NWs, which are synthesized using a silane-mediated approach. The NWs contain large amounts of generalized stacking fault defects. These defects evolve upon sustained electron exposure, and simultaneously the NWs undergo necking and breaking. Quantitative strain analysis reveals the key role of strain in the breakdown process. Besides, ligand-like morphology is observed at the surface of the NWs, indicating the possibility of using AC-HRTEM for surface ligand imaging. Moreover, the coalescence dynamic of ultrathin Au NWs is demonstrated by in situ observations. This work provides a comprehensive understanding of the structure of ultrathin metal NWs at atomic-scale and could have important implications for their applications. PMID:27071038

  2. Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene

    NASA Astrophysics Data System (ADS)

    Kumar, Piyush; Bhadoria, B. S.; Kumar, Sanjay; Bhowmick, Somnath; Chauhan, Yogesh Singh; Agarwal, Amit

    2016-05-01

    Based on extensive first-principles calculations, we explore the thickness-dependent effective dielectric constant and slab polarizability of few-layer black phosphorene. We find that the dielectric constant in ultrathin phosphorene is thickness-dependent and it can be further tuned by applying an out-of-plane electric field. The decreasing dielectric constant with reducing number of layers of phosphorene is a direct consequence of the lower permittivity of the outer layers and the increasing surface-to-volume ratio. We also show that the slab polarizability depends linearly on the number of layers, implying a nearly constant polarizability per phosphorus atom. Our calculation of the thickness- and electric-field-dependent dielectric properties will be useful for designing and interpreting transport experiments in gated phosphorene devices, wherever electrostatic effects such as capacitance and charge screening are important.

  3. Reflectance properties of one-dimensional metal-dielectric ternary photonic crystal

    NASA Astrophysics Data System (ADS)

    Pandey, G. N.; Kumar, Narendra; Thapa, Khem B.; Ojha, S. P.

    2016-05-01

    Metallic photonic crystal has a very important application in absorption enhancement in solar cells. It has been found that an ultra-thin metallic layer becomes transparent due to internal scattering of light through the each interface of the dielectric and metal surfaces. The metal has absorption due to their surface plasmon and the plasmon has important parameters for changing optical properties of the metal. We consider ternary metallic-dielectric photonic crystal (MDPC) for having large probabilities to change the optical properties of the MDPC and the photonic crystals may be changed by changing dimensionality, symmetry, lattice parameters, Filling fraction and effective refractive index refractive index contrast. In this present communication, we try to show that the photonic band gap in ternary metal-dielectric photonic crystal can be significantly enlarged when air dielectric constant is considered. All the theoretical analyses are made based on the transfer matrix method together with the Drude model of metal.

  4. Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications.

    PubMed

    Guo, Lei; Qin, Xiangdong; Zaera, Francisco

    2016-03-01

    A protocol has been developed to selectively process low-k SiCOH dielectric substrates in order to activate or deactivate them toward the deposition of thin solid films by chemical (CVD or ALD) means. The original SiCOH surfaces are hydrophobic, an indication that they are alkyl- rather than silanol-terminated and that, consequently, they are fairly unreactive. However, the chemical-mechanical polishing (CMP) sometimes done during microelectronics fabrication renders them hydrophilic and reactive. It was shown here that silylation of the CMP-treated surfaces with any of a number of well-known silylation agents such as HMDS, ODTS, or OTS caps the reactive silanol surface groups and turns them back to being hydrophilic and unreactive. Further exposure of any of the passivated surfaces to a combination of ozone and UV radiation reinstates their hydrophilicity and chemical activity. Importantly, it was also demonstrated that all these changes could be induced without altering the original mechanical, optical, or electrical properties of the samples: atomic force microscopy (AFM) images show no increase in roughness, ellipsometry measurements yield the same values for the index of refraction and dielectric constant, and infrared absorption spectroscopy attests to the preservation of the organic fragments present in the original SiCOH samples. The chemical selectivity of the resulting surfaces was tested for the atomic layer deposition (ALD) of HfO2 films, which could be grown only on the UV/O3 treated substrates. PMID:26956428

  5. Interfacial phenomena in high-kappa dielectrics

    NASA Astrophysics Data System (ADS)

    Mathew, Anoop

    The introduction of novel high-kappa dielectric materials to replace the traditional SiO2 insulating layer in CMOS transistors is a watershed event in the history of transistor development. Further, replacement of the traditional highly-doped polycrystalline silicon gate electrode with a new set of materials for metal gates complicates the transition and introduces further integration challenges. A whole variety of new material surfaces and interfaces are thus introduced that merit close investigation to determine parameters for optimal device performance. Nitrogen is a key component that improves the performance of a variety of materials for the next generation of these CMOS transistors. Nitrogen is introduced into new gate dielectric materials such as hafnium silicates as well as in potential metal gate materials such as hafnium nitride. A photoemission study of the binding energies of the various atoms in these systems using photoemission reveals the nature of the atomic bonding. The current study compares hafnium silicates of various compositions which were thermally nitrided at different temperatures in ammonia, hafnium nitrides, and thin HfO2 films using photoelectron spectroscopy. A recurring theme that is explored is the competition between oxygen and nitrogen atoms in bonding with hafnium and other atoms. The N 1s photoemission peak is seen to have contributions from its bonding with hafnium, oxygen, and silicon atoms. The Hf 4f and O 1s spectra similarly exhibit signatures of their bonding environment with their neighboring atoms. Angle resolved photoemission and in-situ annealing/argon sputtering experiments are used to elucidate the nature of the bonding and its evolution with processing. A nondestructive profilitng of nitrogen distribution as a function of composition in nitrided hafnium silicates is also constructed using angle resolved photoemission as a function of the take-off angle. These results are corroborated with depth reconstruction obtained

  6. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  7. Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

    NASA Astrophysics Data System (ADS)

    Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

    2016-03-01

    Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

  8. Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates

    NASA Astrophysics Data System (ADS)

    Shahinur Rahman, Md.; Evangelou, E. K.; Konofaos, N.; Dimoulas, A.

    2012-11-01

    We report on the reliability characteristics and their analysis, of rare-earth oxides (REOs) dielectric degradation, when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-oxide-semiconductor (MOS) devices with these stacks, show dissimilar charge trapping phenomena under varying levels of constant-voltage-stress (CVS) conditions, influencing the measured densities of the interface (Nit) and border (NBT) traps. In the present study, we report on C-Vg hysteresis curves related to both Nit and NBT. We propose a new model based on the Maxwell-Wagner mechanism, and this model explains the current decay transient observed under CVS bias from low to higher fields of MOS gate stack devices grown on Ge substrates. The proposed model is unlike to those used for other MOS devices. Finally, CVS measurements for very long times at moderate fields reveal an initial current decay due to relaxation, followed by charge trapping and generation of stress-induced leakage which eventually lead to hard breakdown.

  9. Structure and Electronic Properties of Polycrystalline Dielectrics

    SciTech Connect

    Mckenna, Keith P.; Shluger, AL

    2013-07-07

    We present an overview of the theoretical approaches that can be employed to model polycrystalline oxides along with a discussion of their limitations and associated challenges. We then present results for two metal oxide materials, MgO and HfO2, where theory and experiment have come together to provide insight into the structure and electronic properties of grain boundaries. Finally, we conclude with a discussion and outlook.

  10. Resonant dielectric metamaterials

    SciTech Connect

    Loui, Hung; Carroll, James; Clem, Paul G; Sinclair, Michael B

    2014-12-02

    A resonant dielectric metamaterial comprises a first and a second set of dielectric scattering particles (e.g., spheres) having different permittivities arranged in a cubic array. The array can be an ordered or randomized array of particles. The resonant dielectric metamaterials are low-loss 3D isotropic materials with negative permittivity and permeability. Such isotropic double negative materials offer polarization and direction independent electromagnetic wave propagation.

  11. Dielectrically loaded horns

    NASA Astrophysics Data System (ADS)

    Tun, S. M.; Bustamante, R.; Williams, N.

    Dielectrically loaded horns have been proposed as alternatives to conical corrugated horns in high-performance primary feeds in virtue both of their lower cost and theoretical indications of superior operational bandwidth performance, while retaining circularly symmetric radiation, low sidelobes, and low cross-polarization. A prototype dielectric core-loaded horn, and a dual-band transmit/receive horn antenna incorporating a dielectric rod inside a small corrugated horn, have been developed and tested; the dielectric used for the rod is Rexolite. The high performance obtainable by this inexpensive technology has been experimentally demonstrated.

  12. Ultrasound-responsive ultrathin multiblock copolyamide vesicles

    NASA Astrophysics Data System (ADS)

    Huang, Lei; Yu, Chunyang; Huang, Tong; Xu, Shuting; Bai, Yongping; Zhou, Yongfeng

    2016-02-01

    This study reports the self-assembly of novel polymer vesicles from an amphiphilic multiblock copolyamide, and the vesicles show a special structure with an ultrathin wall thickness of about 4.5 nm and a combined bilayer and monolayer packing model. Most interestingly, the vesicles are ultrasound-responsive and can release the encapsulated model drugs in response to ultrasonic irradiation.This study reports the self-assembly of novel polymer vesicles from an amphiphilic multiblock copolyamide, and the vesicles show a special structure with an ultrathin wall thickness of about 4.5 nm and a combined bilayer and monolayer packing model. Most interestingly, the vesicles are ultrasound-responsive and can release the encapsulated model drugs in response to ultrasonic irradiation. Electronic supplementary information (ESI) available: Details of experiments and characterization, and FT-IR, TEM, DPD, FL and micro-DSC results. See DOI: 10.1039/c5nr08596a

  13. Atomically flat ultrathin cobalt ferrite islands.

    PubMed

    Martín-García, Laura; Quesada, Adrián; Munuera, Carmen; Fernández, Jose F; García-Hernández, Mar; Foerster, Michael; Aballe, Lucía; de la Figuera, Juan

    2015-10-21

    A route for fabricating structurally perfect cobalt ferrite magnetic nanostructures is demonstrated. Ultrathin islands of up to 100 μm(2) with atomically flat surfaces and free from antiphase boundaries are developed. The extremely low defect concentration leads to a robust magnetic order, even for thicknesses below 1 nm, and exceptionally large magnetic domains. This approach allows the evaluation of the influence of specific extrinsic effects on domain wall pinning. PMID:26306027

  14. Photoresponsive properties of ultrathin silicon nanowires

    SciTech Connect

    Tran, Duy P.; Macdonald, Thomas J.; Nann, Thomas; Thierry, Benjamin E-mail: benjamin.thierry@unisa.edu.au; Wolfrum, Bernhard; Stockmann, Regina; Offenhäusser, Andreas E-mail: benjamin.thierry@unisa.edu.au

    2014-12-08

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 10{sup 4 }A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  15. Defects and metrology of ultrathin resist films

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Cobb, Jonathan L.; Dentinger, Paul M.; Henderson, Craig C.; Rao, Veena; Monahan, Kevin M.; Luo, David; Pike, Christopher

    2000-06-01

    Defectivity in spin-coated, but unpatterned ultrathin resist (UTR) films (ultrathin resists. Four resist samples formulated from the same Shipley UV6 polymer batch and having the same polymer molecular weight properties but different viscosities, were spin-coated at spin speeds ranging from 1000 to 5000 RPM on a production-grade track in a Class 1 pilot line facility. Defect inspection was carried out with KLA SP1/TBI tool, while defect review was carried out with JEOL 7515 SEM tool and KLA Ultrapointe Confocal Review Station (CRS) Microscope. The results obtained are related to the physical properties of the resist polymers, as well as to spin coating parameters. Also, the results of the defect inspection, review, characterization, and pareto are compared to those obtained on baseline thick resists (>= 3500 Angstrom) processed under similar condition as the ultra-thin resists. The results show that for a well-optimized coating process and within the thickness range explored (800 - 4200 Angstrom), there is no discernible dependence of defectivity on film thickness of the particular resists studied and on spin speed. Also assessed is the capability of the current metrology toolset for inspecting, reviewing, and classifying the various types of defects in UTR films.

  16. Photoresponsive properties of ultrathin silicon nanowires

    NASA Astrophysics Data System (ADS)

    Tran, Duy P.; Macdonald, Thomas J.; Wolfrum, Bernhard; Stockmann, Regina; Nann, Thomas; Offenhäusser, Andreas; Thierry, Benjamin

    2014-12-01

    Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (˜1 pW/array), good time response, and high photoresponsivity (R ˜ 2.5 × 104 A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices.

  17. High-Magnetization FeCo Nanochains with Ultrathin Interfacial Gaps for Broadband Electromagnetic Wave Absorption at Gigahertz.

    PubMed

    Zhang, Xuefeng; Li, Yixing; Liu, Rongge; Rao, Yi; Rong, Huawei; Qin, Gaowu

    2016-02-10

    Superparamagnetic FeCo nanochains consisting of assembled ∼25 nm nanoparticles and ∼1 nm gaps are synthesized by facial wet-chemical route and exhibit significant electromagnetic absorption at gigahertz. Both the dielectric and magnetic loss factors present dual-resonance behaviors at 2-18 GHz frequencies, originated from the asymmetric architecture of the cubic FeCo particles that assembled in a one-dimensional chain structure. Theoretical analyses uncover that the origins of the enhancement of electromagnetic losses are ascribed to the high magnetization (228 emu/g) and the ultrathin gaps (∼1 nm), which enhances the Snoek limit and induces anisotropic dielectric polarizations, consequently constructing a proper electromagnetic match. PMID:26775668

  18. Interfacial study and band alignment of ultrathin La2Hf2O7 films on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Wei, F.; Xiong, Y.-H.; Zhang, X.-Q.; Du, J.; Tu, H.-L.

    2013-09-01

    We report ultrathin amorphous La2Hf2O7 (LHO) films grown on p-GaAs (0 0 1) substrates as high-k gate dielectric using the pulsed laser deposition method. Interfacial characterization of the LHO/GaAs has been carried out. It shows that the interfacial layer with a thickness of less than 0.5 nm is composed of Ga2O3. Experimental results show that the 5.7 ± 0.1 eV bandgap of LHO is aligned to the bandgap of GaAs with a valence band offset of 3.15 ± 0.05 eV and a conduction band offset of 1.1 ± 0.1 eV. Capacitance-voltage and current-voltage measurements indicate that LHO could be a promising gate dielectric for GaAs metal-oxide-semiconductor devices.

  19. Microwave absorptions of ultrathin conductive films and designs of frequency-independent ultrathin absorbers

    SciTech Connect

    Li, Sucheng; Anwar, Shahzad; Lu, Weixin; Hang, Zhi Hong; Hou, Bo E-mail: phyhoubo@gmail.com; Shen, Mingrong; Wang, Chin-Hua

    2014-01-15

    We study the absorption properties of ultrathin conductive films in the microwave regime, and find a moderate absorption effect which gives rise to maximal absorbance 50% if the sheet (square) resistance of the film meets an impedance matching condition. The maximal absorption exhibits a frequency-independent feature and takes place on an extremely subwavelength scale, the film thickness. As a realistic instance, ∼5 nm thick Au film is predicted to achieve the optimal absorption. In addition, a methodology based on metallic mesh structure is proposed to design the frequency-independent ultrathin absorbers. We perform a design of such absorbers with 50% absorption, which is verified by numerical simulations.

  20. Ultrathin niobium nanofilms on fiber optical tapers - a new route towards low-loss hybrid plasmonic modes

    NASA Astrophysics Data System (ADS)

    Wieduwilt, Torsten; Tuniz, Alessandro; Linzen, Sven; Goerke, Sebastian; Dellith, Jan; Hübner, Uwe; Schmidt, Markus A.

    2015-11-01

    Due to the ongoing improvement in nanostructuring technology, ultrathin metallic nanofilms have recently gained substantial attention in plasmonics, e.g. as building blocks of metasurfaces. Typically, noble metals such as silver or gold are the materials of choice, due to their excellent optical properties, however they also possess some intrinsic disadvantages. Here, we introduce niobium nanofilms (~10 nm thickness) as an alternate plasmonic platform. We demonstrate functionality by depositing a niobium nanofilm on a plasmonic fiber taper, and observe a dielectric-loaded niobium surface-plasmon excitation for the first time, with a modal attenuation of only 3-4 dB/mm in aqueous environment and a refractive index sensitivity up to 15 μm/RIU if the analyte index exceeds 1.42. We show that the niobium nanofilm possesses bulk optical properties, is continuous, homogenous, and inert against any environmental influence, thus possessing several superior properties compared to noble metal nanofilms. These results demonstrate that ultrathin niobium nanofilms can serve as a new platform for biomedical diagnostics, superconducting photonics, ultrathin metasurfaces or new types of optoelectronic devices.

  1. Ultrathin niobium nanofilms on fiber optical tapers--a new route towards low-loss hybrid plasmonic modes.

    PubMed

    Wieduwilt, Torsten; Tuniz, Alessandro; Linzen, Sven; Goerke, Sebastian; Dellith, Jan; Hübner, Uwe; Schmidt, Markus A

    2015-01-01

    Due to the ongoing improvement in nanostructuring technology, ultrathin metallic nanofilms have recently gained substantial attention in plasmonics, e.g. as building blocks of metasurfaces. Typically, noble metals such as silver or gold are the materials of choice, due to their excellent optical properties, however they also possess some intrinsic disadvantages. Here, we introduce niobium nanofilms (~10 nm thickness) as an alternate plasmonic platform. We demonstrate functionality by depositing a niobium nanofilm on a plasmonic fiber taper, and observe a dielectric-loaded niobium surface-plasmon excitation for the first time, with a modal attenuation of only 3-4 dB/mm in aqueous environment and a refractive index sensitivity up to 15 μm/RIU if the analyte index exceeds 1.42. We show that the niobium nanofilm possesses bulk optical properties, is continuous, homogenous, and inert against any environmental influence, thus possessing several superior properties compared to noble metal nanofilms. These results demonstrate that ultrathin niobium nanofilms can serve as a new platform for biomedical diagnostics, superconducting photonics, ultrathin metasurfaces or new types of optoelectronic devices. PMID:26593209

  2. Ultrathin niobium nanofilms on fiber optical tapers – a new route towards low-loss hybrid plasmonic modes

    PubMed Central

    Wieduwilt, Torsten; Tuniz, Alessandro; Linzen, Sven; Goerke, Sebastian; Dellith, Jan; Hübner, Uwe; Schmidt, Markus A.

    2015-01-01

    Due to the ongoing improvement in nanostructuring technology, ultrathin metallic nanofilms have recently gained substantial attention in plasmonics, e.g. as building blocks of metasurfaces. Typically, noble metals such as silver or gold are the materials of choice, due to their excellent optical properties, however they also possess some intrinsic disadvantages. Here, we introduce niobium nanofilms (~10 nm thickness) as an alternate plasmonic platform. We demonstrate functionality by depositing a niobium nanofilm on a plasmonic fiber taper, and observe a dielectric-loaded niobium surface-plasmon excitation for the first time, with a modal attenuation of only 3–4 dB/mm in aqueous environment and a refractive index sensitivity up to 15 μm/RIU if the analyte index exceeds 1.42. We show that the niobium nanofilm possesses bulk optical properties, is continuous, homogenous, and inert against any environmental influence, thus possessing several superior properties compared to noble metal nanofilms. These results demonstrate that ultrathin niobium nanofilms can serve as a new platform for biomedical diagnostics, superconducting photonics, ultrathin metasurfaces or new types of optoelectronic devices. PMID:26593209

  3. Gaseous dielectrics V

    SciTech Connect

    Christophorou, L.G.; Bouldin, D.W.

    1987-01-01

    This symposium represents a transdisciplinary and comprehensive approach to the study of gaseous dielectrics. The goal of the symposium was to demonstrate the effective coupling between basic and applied research and modern technology achieved in this area, and to guide future research and development and industrial use of gaseous dielectrics. Separate abstracts were prepared for 85 papers in these proceedings. (DWL)

  4. Terahertz Artificial Dielectric Lens

    NASA Astrophysics Data System (ADS)

    Mendis, Rajind; Nagai, Masaya; Wang, Yiqiu; Karl, Nicholas; Mittleman, Daniel M.

    2016-03-01

    We have designed, fabricated, and experimentally characterized a lens for the THz regime based on artificial dielectrics. These are man-made media that mimic properties of naturally occurring dielectric media, or even manifest properties that cannot generally occur in nature. For example, the well-known dielectric property, the refractive index, which usually has a value greater than unity, can have a value less than unity in an artificial dielectric. For our lens, the artificial-dielectric medium is made up of a parallel stack of 100 μm thick metal plates that form an array of parallel-plate waveguides. The convergent lens has a plano-concave geometry, in contrast to conventional dielectric lenses. Our results demonstrate that this lens is capable of focusing a 2 cm diameter beam to a spot size of 4 mm, at the design frequency of 0.17 THz. The results further demonstrate that the overall power transmission of the lens can be better than certain conventional dielectric lenses commonly used in the THz regime. Intriguingly, we also observe that under certain conditions, the lens boundary demarcated by the discontinuous plate edges actually resembles a smooth continuous surface. These results highlight the importance of this artificial-dielectric technology for the development of future THz-wave devices.

  5. Composite dielectric waveguides

    NASA Astrophysics Data System (ADS)

    Yamashita, E.; Atsuki, K.; Kuzuya, R.

    1980-09-01

    The modal analysis of a composite circular dielectric waveguide (CCDW) is presented. Computed values of the propagation constant of a CCDW are compared with those of the homogeneous circular dielectric waveguides (HCDW). Microwave experiments concerning the propagation constant of a CCDW of Teflon and Rexolite are described.

  6. Terahertz Artificial Dielectric Lens

    PubMed Central

    Mendis, Rajind; Nagai, Masaya; Wang, Yiqiu; Karl, Nicholas; Mittleman, Daniel M.

    2016-01-01

    We have designed, fabricated, and experimentally characterized a lens for the THz regime based on artificial dielectrics. These are man-made media that mimic properties of naturally occurring dielectric media, or even manifest properties that cannot generally occur in nature. For example, the well-known dielectric property, the refractive index, which usually has a value greater than unity, can have a value less than unity in an artificial dielectric. For our lens, the artificial-dielectric medium is made up of a parallel stack of 100 μm thick metal plates that form an array of parallel-plate waveguides. The convergent lens has a plano-concave geometry, in contrast to conventional dielectric lenses. Our results demonstrate that this lens is capable of focusing a 2 cm diameter beam to a spot size of 4 mm, at the design frequency of 0.17 THz. The results further demonstrate that the overall power transmission of the lens can be better than certain conventional dielectric lenses commonly used in the THz regime. Intriguingly, we also observe that under certain conditions, the lens boundary demarcated by the discontinuous plate edges actually resembles a smooth continuous surface. These results highlight the importance of this artificial-dielectric technology for the development of future THz-wave devices. PMID:26973294

  7. Terahertz Artificial Dielectric Lens.

    PubMed

    Mendis, Rajind; Nagai, Masaya; Wang, Yiqiu; Karl, Nicholas; Mittleman, Daniel M

    2016-01-01

    We have designed, fabricated, and experimentally characterized a lens for the THz regime based on artificial dielectrics. These are man-made media that mimic properties of naturally occurring dielectric media, or even manifest properties that cannot generally occur in nature. For example, the well-known dielectric property, the refractive index, which usually has a value greater than unity, can have a value less than unity in an artificial dielectric. For our lens, the artificial-dielectric medium is made up of a parallel stack of 100 μm thick metal plates that form an array of parallel-plate waveguides. The convergent lens has a plano-concave geometry, in contrast to conventional dielectric lenses. Our results demonstrate that this lens is capable of focusing a 2 cm diameter beam to a spot size of 4 mm, at the design frequency of 0.17 THz. The results further demonstrate that the overall power transmission of the lens can be better than certain conventional dielectric lenses commonly used in the THz regime. Intriguingly, we also observe that under certain conditions, the lens boundary demarcated by the discontinuous plate edges actually resembles a smooth continuous surface. These results highlight the importance of this artificial-dielectric technology for the development of future THz-wave devices. PMID:26973294

  8. Imaging Electrons in Ultra-thin Nanowires

    NASA Astrophysics Data System (ADS)

    Boyd, Erin E.

    2011-12-01

    Ultra-thin semiconductor nanowires are promising systems in which to explore novel low-dimensional physics and are attractive candidates for future nanoelectronics. Ultra-thin nanowires with diameters of 20 to 30 nm are essentially one-dimensional (ID) for moderate electron number, because only one radial subband is occupied. Low-temperature scanning gate microscopy is especially well suited for improving our understanding of nanowires in order to optimize the construction of nanowire systems. We use a home-built liquid-He cooled scanning gate microscope (SGM) to probe and manipulate electrons beneath the surface of devices. The SGM's conductance images are obtained by scanning the charged SGM tip above the sample and recording the change in conductance through the device as a function of tip position. We present simulations of extracting the amplitude of the 1D electron wavefunction along the length of the quantum dot in an ultra-thin InAs/InP heterostructure nanowire (diameter = 30 nm) using a SGM. A weakly perturbing SGM tip slightly dents the electron wavefunction inside the quantum dot, and we propose measuring the change in energy of the dot due to the perturbation as a function of tip position. By measuring the change in energy of the dot and by knowing the form of the tip potential, the amplitude of the wavefunction can be found. This extraction technique could serve as a powerful tool to improve our understanding of electron behavior in quasi-1 D systems. We have used our SGM to image the conductance through an ultra-thin (diameter ˜ 30 nm) 1nAs nanowire with two InP barriers. Our imaging technique provides detailed information regarding the position and flow of electrons in the nanowire. We demonstrate that the charged SPM tip's position or voltage can be used to control the number of electrons on the quantum dots. We spatially locate three quantum dots in series along the length of the ultra-thin nanowire. Using energy level spectroscopy and the

  9. Broadband frequency-selective spoof surface plasmon polaritons on ultrathin metallic structure.

    PubMed

    Yin, Jia Yuan; Ren, Jian; Zhang, Hao Chi; Pan, Bai Cao; Cui, Tie Jun

    2015-01-01

    We propose an ultrathin metallic structure to produce frequency-selective spoof surface plasmon polaritons (SPPs) in the microwave and terahertz frequencies. Designed on a thin dielectric substrate, the ultrathin metallic structure is composed of two oppositely oriented single-side corrugated strips, which are coupled to two double-side corrugated strips. The structure is fed by a traditional coplanar waveguide (CPW). To make a smooth conversion between the spatial modes in CPW and SPP modes, two transition sections are also designed. We fabricate and measure the frequency-selective spoof SPP structure in microwave frequencies. The measurement results show that the reflection coefficient is less than -10 dB with the transmission loss around 1.5 dB in the selective frequency band from 7 to 10 GHz, which are in good agreements with numerical simulations. The proposed structure can be used as an SPP filter with good performance of low loss, high transmission, and wide bandwidth in the selective frequency band. PMID:25641730

  10. Confinement effects in ultrathin ZnO polymorph films: Electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Sponza, Lorenzo; Goniakowski, Jacek; Noguera, Claudine

    2016-05-01

    Relying on generalized-gradient and hybrid first-principles simulations, this work provides a complete characterization of the electronic properties of ZnO ultrathin films, cut along the body-centered-tetragonal(010), cubane(100), hexagonal boron nitride(0001), zinc-blende(110), and wurtzite (10 1 ¯0 ) and (0001) orientations. The characteristics of the local densities of states are analyzed in terms of the reduction of the Madelung potential on undercoordinated atoms and surface states/resonances appearing at the top of the valence band and bottom of the conduction band. The gap width in the films is found to be larger than in the corresponding bulks, which is assigned to quantum confinement effects. The components of the high-frequency dielectric constant are determined and the absorption spectra of the films are computed. They display specific features just above the absorption threshold due to transitions from or to the surface resonances. This study provides a first understanding of finite-size effects on the electronic properties of ZnO thin films and a benchmark which is expected to foster experimental characterization of ultrathin films via spectroscopic techniques.

  11. Broadband Frequency-Selective Spoof Surface Plasmon Polaritons on Ultrathin Metallic Structure

    PubMed Central

    Yin, Jia Yuan; Ren, Jian; Zhang, Hao Chi; Pan, Bai Cao; Cui, Tie Jun

    2015-01-01

    We propose an ultrathin metallic structure to produce frequency-selective spoof surface plasmon polaritons (SPPs) in the microwave and terahertz frequencies. Designed on a thin dielectric substrate, the ultrathin metallic structure is composed of two oppositely oriented single-side corrugated strips, which are coupled to two double-side corrugated strips. The structure is fed by a traditional coplanar waveguide (CPW). To make a smooth conversion between the spatial modes in CPW and SPP modes, two transition sections are also designed. We fabricate and measure the frequency-selective spoof SPP structure in microwave frequencies. The measurement results show that the reflection coefficient is less than -10 dB with the transmission loss around 1.5 dB in the selective frequency band from 7 to 10 GHz, which are in good agreements with numerical simulations. The proposed structure can be used as an SPP filter with good performance of low loss, high transmission, and wide bandwidth in the selective frequency band. PMID:25641730

  12. Ultrathin triple-band polarization-insensitive wide-angle compact metamaterial absorber

    NASA Astrophysics Data System (ADS)

    Shang, Shuai; Yang, Shizhong; Tao, Lu; Yang, Lisheng; Cao, Hailin

    2016-07-01

    In this study, the design, realization, and characterization of an ultrathin triple-band polarization-insensitive wide-angle metamaterial absorber are reported. The metamaterial absorber comprises a periodic array of modified six-fold symmetric snowflake-shaped resonators with strip spiral line load, which is printed on a dielectric substrate backed by a metal ground plane. It is shown that the absorber exhibits three distinct near-unity absorption peaks, which are distributed across C, X, Ku bands, respectively. Owing to the six-fold symmetry, the absorber is insensitive to the polarization of the incident radiation. In addition, the absorber shows excellent absorption performance over wide oblique incident angles for both transverse electric and transverse magnetic polarizations. Simulated surface current and field distributions at the three absorption peaks are demonstrated to understand the absorption mechanism. Particularly, the absorption modes come from the fundamental and high-order dipole resonances. Furthermore, the experimental verification of the designed absorber is conducted, and the measured results are in reasonable agreement with the simulated ones. The proposed ultrathin (˜0.018λ0, λ0 corresponding to the lowest peak absorption frequency) compact (0.168λ0×0.168λ0 corresponding to the area of a unit cell) absorber enables potential applications such as stealth technology, electromagnetic interference and spectrum identification.

  13. Non-contact C-V measurements of ultra thin dielectrics

    NASA Astrophysics Data System (ADS)

    Edelman, P.; Savtchouk, A.; Wilson, M.; D'Amico, J.; Kochey, J. N.; Marinskiy, D.; Lagowski, J.

    2004-07-01

    In this paper, we present a non-contact C-V technique for ultra-thin dielectrics on silicon. The technique uses incremental corona charging of dielectric and a measurement of the surface potential with a vibrating capacitive electrode. A differential quasistatic C-V curve is generated using time-resolved measurements. The technique incorporates transconductance corrections that enable corresponding ultra-low electrical oxide thickness (EOT) determination down to the sub-nanometer range. It also provides a means for monitoring the flat band voltage, V{FB}, the interface trap spectrum, D{IT}, and the total dielectric charge, Q{TOT}. This technique is seen as a replacement for not only MOS C-V measurements but also for mercury-probe C-V. In addition, EOT measurement by the corona C-V has a major advantage over optical thickness methods because it is not affected by water adsorption and molecular airborne contamination, MAC. These effects have been a problem for optical metrology of ultra-thin dielectrics.

  14. Spoof localized surface plasmons on ultrathin textured MIM ring resonator with enhanced resonances.

    PubMed

    Zhou, Yong Jin; Xiao, Qian Xun; Yang, Bao Jia

    2015-01-01

    We numerically demonstrate that spoof localized surface plasmons (LSPs) resonant modes can be enhanced based on ultrathin corrugated metal-insulator-metal (MIM) ring resonator. Further enhancement of the LSPs modes has been achieved by incorporating an efficient and ease-of-integration exciting method. Quality factors of resonance peaks have become much larger and multipolar resonances modes can be easily observed on the textured MIM ring resonator excited by a microstrip line. Experimental results validate the high-efficiency excitation and resonance enhancements of spoof LSPs modes on the MIM ring resonator in the microwave frequencies. We have shown that the fabricated resonator is sensitive to the variation of both the dielectric constant and the thickness of surrounding materials under test. The spoof plasmonic resonator can be used as key elements to provide many important device functionalities such as optical communications, signal processing, and spectral engineering in the plasmonic integration platform. PMID:26420668

  15. Spoof localized surface plasmons on ultrathin textured MIM ring resonator with enhanced resonances

    PubMed Central

    Zhou, Yong Jin; Xiao, Qian Xun; Jia Yang, Bao

    2015-01-01

    We numerically demonstrate that spoof localized surface plasmons (LSPs) resonant modes can be enhanced based on ultrathin corrugated metal-insulator-metal (MIM) ring resonator. Further enhancement of the LSPs modes has been achieved by incorporating an efficient and ease-of-integration exciting method. Quality factors of resonance peaks have become much larger and multipolar resonances modes can be easily observed on the textured MIM ring resonator excited by a microstrip line. Experimental results validate the high-efficiency excitation and resonance enhancements of spoof LSPs modes on the MIM ring resonator in the microwave frequencies. We have shown that the fabricated resonator is sensitive to the variation of both the dielectric constant and the thickness of surrounding materials under test. The spoof plasmonic resonator can be used as key elements to provide many important device functionalities such as optical communications, signal processing, and spectral engineering in the plasmonic integration platform. PMID:26420668

  16. Analysis of laser energy deposition leading to damage and ablation of HfO2 and Nb2O5 single layers submitted to 500 fs pulses at 1030 and 343 nm

    NASA Astrophysics Data System (ADS)

    Douti, Dam-Bé; Bégou, Thomas; Lemarchand, Fabien; Lumeau, Julien; Commandré, Mireille; Gallais, Laurent

    2016-07-01

    Laser- induced damage thresholds and morphologies of laser ablated sites on dielectric thin films are studied based on experiments and simulations. The films are single layers of hafnia and niobia deposited on fused silica substrates with a magnetron sputtering technique. Laser experiments are conducted with 500 fs pulses at 1030 and 343 nm, and the irradiated sites are characterized with optical profilometry and scanning electron microscopy. The results, i.e., LIDT and damage morphologies, are compared to simulations of energy deposition in the films based on the single rate equation for electron excitation, taking into account transient optical properties of the films during the pulse. The results suggest that a critical absorbed energy as a damage criterion gives consistent results both with the measured LIDT and the observed damage morphologies at fluences close to the damage threshold. Based on the numerical and experimental results, the determined LIDT evolution with the wavelength is described as nearly constant in the near-infrared region, and as rapidly decreasing with laser wavelength in the visible and near-ultraviolet regions.

  17. Effect of film properties for non-linear DPL model in a nanoscale MOSFET with high-k material: ZrO2/HfO2/La2O3

    NASA Astrophysics Data System (ADS)

    Shomali, Zahra; Ghazanfarian, Jafar; Abbassi, Abbas

    2015-07-01

    Numerical simulation of non-linear non-Fourier heat conduction within a nano-scale metal-oxide-semiconductor field-effect transistor (MOSFET) is presented under the framework of Dual-Phase-Lag model including the boundary phonon scattering. The MOSFET is modeled in four cases of: (I) thin silicon slab, (II) including uniform heat generation, (III) double-layered buried oxide MOSFET with uniform heat generation in silicon-dioxide layer, and (IV) high-k/metal gate transistor. First, four cases are studied under four conditions of (a) constant bulk and (b) constant film thermal properties, (c) temperature-dependent properties of bulk silicon, and (d) temperature-dependent thermal properties of film silicon. The heat source and boundary conditions are similar to what existed in a real MOSFET. It is concluded that in all cases, considering the film properties lowers the temperature jump due to the reduction of the Knudsen number. Furthermore, the speed of heat flux penetration for film properties is less than that of the cases concerning bulk properties. Also, considering the temperature-dependent properties drastically changes the temperature and heat flux distributions within the transistor, which increases the diffusion speed and more, decreases the steady state time. Calculations for case (III) presents that all previous studies have underestimated the value of the peak temperature rise by considering the constant bulk properties of silicon. Also, it is found that among the high-k dielectrics investigated in case (IV), zirconium dioxide shows the least peak temperature rise. This presents that zirconium dioxide is a good candidate as far as the thermal issues are concerned.

  18. Design and Fabrication of Ultrathin Plasmonic Nanostructures for Photovoltaics, Color Filtering and Biosensing

    NASA Astrophysics Data System (ADS)

    Zeng, Beibei

    Since the first report of the extraordinary optical transmission (EOT) phenomenon through periodic subwavelength hole arrays milled in optically-thick metal film, plasmonics have generated considerable interest because they enable new fundamental science and application technologies. Central to this phenomenon is the role of surface plasmon polaritons (SPPs), which are essentially electromagnetic waves trapped at the interface between a metal and a dielectric medium through their interactions with free electrons at the metal surface. The resonant interaction between the incident light and surface charge oscillations enables the concentration and manipulation of light at deep subwavelength scales, opening up exciting application opportunities ranging from subwavelength optics and optoelectronics to bio/chemical sensing. Furthermore, additional phenomena arise as the thickness of metal film decreases to be comparable to its skin depth (optically-thin), and the single-interface SPPs on the top and bottom metal surfaces combine to form two coupled SPPs, the long-range and short-range SPPs. Until now, much less work has focused on the study of surface plasmon resonances (SPRs) in ultrathin nanostructured metals. This dissertation seeks to elucidate underlying physical mechanisms of SPRs in ultrathin nanostructured metals and tailor them for practical applications. Inspired by state-of-the-art advances on plasmonics in optically-thick nanostructured metals, one- (1D) and two-dimensional (2D) ultrathin plasmonic nanostructures are exploited for particular applications in three essential areas: photovoltaics, color filters and biosensors, achieving superior performances compared with their optically-thick counterparts. More specifically, this thesis is focused on systematic investigations on: (1) plasmonic transparent electrodes for organic photovoltaics and polarization-insensitive optical absorption enhancement in the active layer; (2) plasmonic subtractive color filters

  19. Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates

    NASA Astrophysics Data System (ADS)

    Samanta, S. K.; Chatterjee, S.; Maikap, S.; Bera, L. K.; Banerjee, H. D.; Maiti, C. K.

    2003-03-01

    The role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films has been studied using constraint theory. Ultrathin (<3 nm) oxynitride films were grown using N2O followed by N2 annealing on strained Si0.82Ge0.18 layers. Silicon dioxide films grown on strained Si0.82Ge0.18 layers were also nitrided in N2O by rapid thermal processing. The nitrogen distribution in the oxynitride films was investigated by time-of-flight secondary ion mass spectrometry. The interface state density, charge trapping properties, and interface state generation with constant current and voltage stressing were studied. It is observed that dielectric films grown in N2O ambient and subsequently annealed in N2 have excellent electrical properties. A low stress-induced leakage current and a high time dependent dielectric breakdown are also observed in these films. Improvements in the electrical properties are shown to be due to the creation of a large number of strong Si-N bonds both in bulk and in the SiON-Si1-xGex interface region of the dielectric.

  20. Ultrathin, epitaxial cerium dioxide on silicon

    SciTech Connect

    Flege, Jan Ingo Kaemena, Björn; Höcker, Jan; Schmidt, Thomas; Falta, Jens; Bertram, Florian; Wollschläger, Joachim

    2014-03-31

    It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce{sub 2}O{sub 3} film may very effectively be converted at room temperature to almost fully oxidized CeO{sub 2} by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.

  1. Arrays of ultrathin silicon solar microcells

    DOEpatents

    Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2014-03-25

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  2. Ultrathin silicon solar cell assembly technology

    SciTech Connect

    Matsui, Y.; Kamimura, K.; Sakurai, K.; Kaminishi, S.; Matsutani, T.

    1985-01-01

    The assembly technology of newly developed ultrathin silicon solar cells was studied. The fundamental technology of welding interconnectors to 50-micron-thick, 2 x 4-cm solar cells, CIC (connector integrated cell) fabrication, module fabrication and of integrating these modules to substrates was developed, and thus the production process was established. In order to verify this production process, testing panels were fabricated and thermal cycling tests were performed. The test results showed that these panels had no visual damage and no electrical degradation.

  3. Arrays of ultrathin silicon solar microcells

    SciTech Connect

    Rogers, John A.; Rockett, Angus A.; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2015-08-11

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  4. Cast dielectric composite linear accelerator

    DOEpatents

    Sanders, David M.; Sampayan, Stephen; Slenes, Kirk; Stoller, H. M.

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  5. Metal-dielectric interactions

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1979-01-01

    There is a wide variety of situations wherein metals are in solid state contact with dielectric materials. The paper reviews some of the factors that influence solid state interactions for metals in contact with dielectric surfaces. Since surfaces play an important part in these reactions, the use of analytical tools in characterizing surfaces is discussed. Adhesion, friction, and wear are utilized as indicators of the nature of interfacial bonding between metals and dielectrics can be effectively determined with adhesion and friction force measurements. Films present on the surface, such as oxygen or water vapor, markedly alter adhesive bond strength which in turn affects friction force and interfacial fracture when attempts are made to separate the contact regions. Analytical surface tools such as the field ion microscope, Auger emission spectroscopy, and X-ray photoelectron spectroscopy are very effective in providing insight into the effect of contact on the surfaces of metals and dielectrics.

  6. Enhanced Breakdown Reliability and Spatial Uniformity of Atomic Layer Deposited High-k Gate Dielectrics on Graphene via Organic Seeding Layers

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Filippone, Stephen; Karmel, Hunter; Johns, James; Alaboson, Justice; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark

    2013-03-01

    Ultra-thin high- κ top-gate dielectrics are essential for high-speed graphene-based nanoelectronic circuits. Motivated by the need for high reliability and spatial uniformity, we report here the first statistical analysis of the breakdown characteristics of dielectrics grown on graphene. Based on these measurements, a rational approach is devised that simultaneously optimizes the gate capacitance and the key parameters of large-area uniformity and dielectric strength. In particular, vertically heterogeneous oxide stacks grown via atomic-layer deposition (ALD) seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic monolayer result in improved reliability (Weibull shape parameter β > 25) compared to the control dielectric directly grown on graphene without PTCDA (β < 1). The optimized sample also showed a large breakdown strength (Weibull scale parameter, EBD > 7 MV/cm) that is comparable to that of the control dielectric grown on Si substrates.

  7. Aperture excited dielectric antennas

    NASA Technical Reports Server (NTRS)

    Crosswell, W. F.; Chatterjee, J. S.; Mason, V. B.; Tai, C. T.

    1974-01-01

    The results of a comprehensive experimental and theoretical study of the effect of placing dielectric objects over the aperture of waveguide antennas are presented. Experimental measurements of the radiation patterns, gain, impedance, near-field amplitude, and pattern and impedance coupling between pairs of antennas are given for various Plexiglas shapes, including the sphere and the cube, excited by rectangular, circular, and square waveguide feed apertures. The waveguide excitation of a dielectric sphere is modeled using the Huygens' source, and expressions for the resulting electric fields, directivity, and efficiency are derived. Calculations using this model show good overall agreement with experimental patterns and directivity measurements. The waveguide under an infinite dielectric slab is used as an impedance model. Calculations using this model agree qualitatively with the measured impedance data. It is concluded that dielectric loaded antennas such as the waveguide excited sphere, cube, or sphere-cylinder can produce directivities in excess of that obtained by a uniformly illuminated aperture of the same cross section, particularly for dielectric objects with dimensions of 2 wavelengths or less. It is also shown that for certain configurations coupling between two antennas of this type is less than that for the same antennas without dielectric loading.

  8. Dielectric spectroscopy in agrophysics

    NASA Astrophysics Data System (ADS)

    Skierucha, W.; Wilczek, A.; Szypłowska, A.

    2012-04-01

    The paper presents scientific foundation and some examples of agrophysical applications of dielectric spectroscopy techniques. The aim of agrophysics is to apply physical methods and techniques for studies of materials and processes which occur in agriculture. Dielectric spectroscopy, which describes the dielectric properties of a sample as a function of frequency, may be successfully used for examinations of properties of various materials. Possible test materials may include agrophysical objects such as soil, fruit, vegetables, intermediate and final products of the food industry, grain, oils, etc. Dielectric spectroscopy techniques enable non-destructive and non-invasive measurements of the agricultural materials, therefore providing tools for rapid evaluation of their water content and quality. There is a limited number of research in the field of dielectric spectroscopy of agricultural objects, which is caused by the relatively high cost of the respective measurement equipment. With the fast development of modern technology, especially in high frequency applications, dielectric spectroscopy has great potential of expansion in agrophysics, both in cognitive and utilitarian aspects.

  9. Flexible, Ultra-Thin, Embedded Die Packaging

    NASA Astrophysics Data System (ADS)

    McPherson, Ryan J.

    As thin, flexible electronics solutions become more robust, their integration into everyday life becomes more likely. With possible applications in wearable electronics, biomedical sensors, or 'peel and stick' sensors, the reliability of these ultra-thin packages becomes paramount. Likewise, the density achievable with stacked packages benefits greatly from thinner die stacks. To this end, techniques previously developed have demonstrated packages with die thinned to approximately 20mum. Covered in this work are methods for thinning and packaging silicon die, as well as information on common materials used in these processes. The author's contribution is a fabrication process for embedding ultra-thin (approximately 10mum) silicon die in polyimide substrates. This method is fully illustrated in Chapter 3 and enumerated in the Appendix as a quick reference. Additionally, thermal cycle testing of passive daisy chain assemblies has shown promising reliability data. Packages were mounted in three alignments: flat, concave, and convex, and placed into thermal shock testing. Finally, the author discusses possible applications for this fabrication process, including the fabrication of multi-chip-modules.

  10. Ultrathin inorganic molecular nanowire based on polyoxometalates.

    PubMed

    Zhang, Zhenxin; Murayama, Toru; Sadakane, Masahiro; Ariga, Hiroko; Yasuda, Nobuhiro; Sakaguchi, Norihito; Asakura, Kiyotaka; Ueda, Wataru

    2015-01-01

    The development of metal oxide-based molecular wires is important for fundamental research and potential practical applications. However, examples of these materials are rare. Here we report an all-inorganic transition metal oxide molecular wire prepared by disassembly of larger crystals. The wires are comprised of molybdenum(VI) with either tellurium(IV) or selenium(IV): {(NH4)2[XMo6O21]}n (X=tellurium(IV) or selenium(IV)). The ultrathin molecular nanowires with widths of 1.2 nm grow to micrometre-scale crystals and are characterized by single-crystal X-ray analysis, Rietveld analysis, scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, thermal analysis and elemental analysis. The crystals can be disassembled into individual molecular wires through cation exchange and subsequent ultrasound treatment, as visualized by atomic force microscopy and transmission electron microscopy. The ultrathin molecular wire-based material exhibits high activity as an acid catalyst, and the band gap of the molecular wire-based crystal is tunable by heat treatment. PMID:26139011

  11. Ultrathin inorganic molecular nanowire based on polyoxometalates

    PubMed Central

    Zhang, Zhenxin; Murayama, Toru; Sadakane, Masahiro; Ariga, Hiroko; Yasuda, Nobuhiro; Sakaguchi, Norihito; Asakura, Kiyotaka; Ueda, Wataru

    2015-01-01

    The development of metal oxide-based molecular wires is important for fundamental research and potential practical applications. However, examples of these materials are rare. Here we report an all-inorganic transition metal oxide molecular wire prepared by disassembly of larger crystals. The wires are comprised of molybdenum(VI) with either tellurium(IV) or selenium(IV): {(NH4)2[XMo6O21]}n (X=tellurium(IV) or selenium(IV)). The ultrathin molecular nanowires with widths of 1.2 nm grow to micrometre-scale crystals and are characterized by single-crystal X-ray analysis, Rietveld analysis, scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet–visible spectroscopy, thermal analysis and elemental analysis. The crystals can be disassembled into individual molecular wires through cation exchange and subsequent ultrasound treatment, as visualized by atomic force microscopy and transmission electron microscopy. The ultrathin molecular wire-based material exhibits high activity as an acid catalyst, and the band gap of the molecular wire-based crystal is tunable by heat treatment. PMID:26139011

  12. Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets.

    PubMed

    Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D; Seo, Jung-Woo T; Chen, Kan-Sheng; Marks, Tobin J; Hersam, Mark C

    2015-10-14

    Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10(-9) A/cm(2) at 2 MV/cm and high capacitances of 245 nF/cm(2). The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm(2) V(-1) s(-1) at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics. PMID:26348822

  13. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

    PubMed

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-11-14

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors. PMID:26451806

  14. Static properties of equilibrium polymers confined in ultrathin films

    NASA Astrophysics Data System (ADS)

    Cavallo, Anna; Wittmer, Joachim P.; Johner, Albert; Baschnagel, Joerg

    2008-03-01

    The static properties of equilibrium polymer melts confined in ultrathin films are studied by means of Monte Carlo simulations of a lattice model: the bond fluctuation model. In this work we focus on the effects of ultrathin film confinement between two parallel and neutral walls on chain size and molecular weight distribution. We compare our numerical results to analytical calculations by Semenov and Johner [Eur. Phy. J. E, 12, 469 (2003)] who predicted for ultrathin films, logarithmic corrections to the leading mean-field behavior. Our simulation data are compatible with the theoretical results.

  15. Ultrathin planar hematite film for solar photoelectrochemical water splitting.

    PubMed

    Liu, Dong; Bierman, David M; Lenert, Andrej; Yu, Hai-Tong; Yang, Zhen; Wang, Evelyn N; Duan, Yuan-Yuan

    2015-11-30

    Hematite holds promise for photoelectrochemical (PEC) water splitting due to its stability, low-cost, abundance and appropriate bandgap. However, it suffers from a mismatch between the hole diffusion length and light penetration length. We have theoretically designed and characterized an ultrathin planar hematite/silver nanohole array/silver substrate photoanode. Due to the supported destructive interference and surface plasmon resonance, photons are efficiently absorbed in an ultrathin hematite film. Compared with ultrathin hematite photoanodes with nanophotonic structures, this photoanode has comparable photon absorption but with intrinsically lower recombination losses due to its planar structure and promises to exceed the state-of-the-art photocurrent of hematite photoanodes. PMID:26698797

  16. Nanoscale electric polarizability of ultrathin biolayers on insulating substrates by electrostatic force microscopy.

    PubMed

    Dols-Perez, A; Gramse, G; Calò, A; Gomila, G; Fumagalli, L

    2015-11-21

    We measured and quantified the local electric polarization properties of ultrathin (∼5 nm) biolayers on mm-thick mica substrates. We achieved it by scanning a sharp conductive tip (<10 nm radius) of an electrostatic force microscope over the biolayers and quantifying sub-picoNewton electric polarization forces with a sharp-tip model implemented using finite-element numerical calculations. We obtained relative dielectric constants εr = 3.3, 2.4 and 1.9 for bacteriorhodopsin, dioleoylphosphatidylcholine (DOPC) and cholesterol layers, chosen as representative of the main cell membrane components, with an error below 10% and a spatial resolution down to ∼50 nm. The ability of using insulating substrates common in biophysics research, such as mica or glass, instead of metallic substrates, offers both a general platform to determine the dielectric properties of biolayers and a wider compatibility with other characterization techniques, such as optical microscopy. This opens up new possibilities for biolayer research at the nanoscale, including nanoscale label-free composition mapping. PMID:26488226

  17. Reversible optical switching of highly confined phonon-polaritons with an ultrathin phase-change material

    NASA Astrophysics Data System (ADS)

    Li, Peining; Yang, Xiaosheng; Maß, Tobias W. W.; Hanss, Julian; Lewin, Martin; Michel, Ann-Katrin U.; Wuttig, Matthias; Taubner, Thomas

    2016-08-01

    Surface phonon-polaritons (SPhPs), collective excitations of photons coupled with phonons in polar crystals, enable strong light-matter interaction and numerous infrared nanophotonic applications. However, as the lattice vibrations are determined by the crystal structure, the dynamical control of SPhPs remains challenging. Here, we realize the all-optical, non-volatile, and reversible switching of SPhPs by controlling the structural phase of a phase-change material (PCM) employed as a switchable dielectric environment. We experimentally demonstrate optical switching of an ultrathin PCM film (down to 7 nm, <λ/1,200) with single laser pulses and detect ultra-confined SPhPs (polariton wavevector kp > 70k0, k0 = 2π/λ) in quartz. Our proof of concept allows the preparation of all-dielectric, rewritable SPhP resonators without the need for complex fabrication methods. With optimized materials and parallelized optical addressing we foresee application potential for switchable infrared nanophotonic elements, for example, imaging elements such as superlenses and hyperlenses, as well as reconfigurable metasurfaces and sensors.

  18. Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process

    NASA Astrophysics Data System (ADS)

    Maiti, Bikas; Hao, Ming Yin; Lee, Insup; Lee, Jack C.

    1992-10-01

    In this letter, we will present the electrical and reliability characteristics of ultrathin oxynitrides (65-73 Å) formed by thermal nitridation of silicon substrate followed by deposition of silicon dioxide by low pressure chemical vapor deposition (LPCVD) technique. The dielectric integrity has been compared to those of the conventional thermal oxide and reoxidized nitrided oxides. It has been found that the new oxynitrides have lower electron trapping, higher charge-to-breakdown, and lower interface state generation under electrical stress even in comparison to reoxidized nitrided oxides with the same thermal budget. The improved characteristics are believed to be due to the combination of the nitrogen-rich layer at the Si/SiO2 interface, the higher quality of LPCVD oxides over thermally grown oxides, and the reduced hydrogen concentration in the dielectrics in comparison to conventional nitrided oxides. The results indicate that these new oxynitride films may be promising for ultra large scale integrated metal-oxide-semiconductor device applications, especially in cases where low thermal budget processes are desirable.

  19. Broadband terahertz absorption enabled by coating an ultrathin antireflection film on doped semiconductor.

    PubMed

    Wu, Hongxing; Shi, Fenghua; Chen, Yihang

    2016-09-01

    We show that perfect absorption of terahertz wave can be achieved in a compact system where an ultrathin film of lossless dielectric is coated on a doped semiconductor substrate. Due to the nontrivial reflection phase shift at the interface between the two media, strong resonant behavior and the concomitant antireflection occur at wavelengths that are much larger than the thickness of the dielectric film, resulting in strong absorption of the incident wave in a wide frequency range. Using this mechanism, we design a broadband terahertz absorber by coating a Ge film on a highly doped GaAs substrate. We show that such a system not only has a perfect absorption peak, but also exhibits high absorptance (over 0.9) within a fractional bandwidth of over 20%. By varying the free carrier density in the GaAs substrate, the central frequency of the absorption band can be tuned from 1.79 to 2.69 THz. In addition, the absorption performance of the proposed system is shown to be insensitive to both incident angle and polarization. Our results offer a low-cost way for the design of absorption-based THz devices. PMID:27607670

  20. PREFACE: Dielectrics 2011

    NASA Astrophysics Data System (ADS)

    Vaughan, Alun; Lewin, Paul

    2011-08-01

    In 2011, the biennial meeting of the Dielectrics Group of the IOP, Dielectrics 2011, was held for the first time in a number of years at the University of Kent at Canterbury. This conference represents the most recent in a long standing series that can trace its roots back to a two-day meeting that was held in the spring of 1968 at Gregynog Hall of the University of Wales. In the intervening 43 years, this series of meetings has addressed many topics, including dielectric relaxation, high field phenomena, biomaterials and even molecular electronics, and has been held at many different venues within the UK. However, in the early 1990s, a regular venue was established at the University of Kent at Canterbury and, it this respect, this year's conference can be considered as "Dielectrics coming home". The format for the 2011 meeting followed that established at Dielectrics 2009, in breaking away from the concept of a strongly themed event that held sway during the mid 2000s. Rather, we again adopted a general, inclusive approach that was based upon four broad technical areas: Theme 1: Insulation/HV Materials Theme 2: Dielectric Spectroscopy Theme 3: Modelling Dielectric Response Theme 4: Functional Materials The result was a highly successful conference that attracted more than 60 delegates from eight countries, giving the event a truly international flavour, and which included both regular and new attendees; it was particularly pleasing to see the number of early career researchers at the meeting. Consequently, the organizing committee would like to thank our colleagues at the IOP, the invited speakers, our sponsors and all the delegates for making the event such a success. Finally, we look forward to convening again in 2013, when we will be returning to The University of Reading. Prof Alun Vaughan and Prof Paul Lewin, Editors

  1. Ultrathin optical panel and a method of making an ultrathin optical panel

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2001-10-09

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  2. Ultrathin Optical Panel And A Method Of Making An Ultrathin Optical Panel.

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2005-02-15

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  3. Ultrathin Optical Panel And A Method Of Making An Ultrathin Optical Panel.

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2005-05-17

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  4. Ultrathin optical panel and a method of making an ultrathin optical panel

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2003-02-11

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  5. Ultrathin optical panel and a method of making an ultrathin optical panel

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2002-01-01

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated With a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  6. Nanopyramid structure for ultrathin c-Si tandem solar cells.

    PubMed

    Li, Guijun; Li, He; Ho, Jacob Y L; Wong, Man; Kwok, Hoi Sing

    2014-05-14

    Recently, ultrathin crystalline silicon solar cells have gained tremendous interest because they are deemed to dramatically reduce material usage. However, the resulting conversion efficiency is still limited by the incomplete light absorption in such ultrathin devices. In this letter, we propose ultrathin a-Si/c-Si tandem solar cells with an efficient light trapping design, where a nanopyramid structure is introduced between the top and bottom cells. The superior light harvesting results in a 48% and 35% remarkable improvement of the short-circuit current density for the top and bottom cells, respectively. Meanwhile, the use of SiOx mixed-phase nanomaterial helps to provide the maximum light trapping without paying the price of reduced electrical performance, and conversion efficiencies of up to 13.3% have been achieved for the ultrathin tandem cell employing only 8 μm of silicon, which is 29% higher than the result obtained for the planar cell. PMID:24730470

  7. A luminescent ultrathin film with reversible sensing toward pressure.

    PubMed

    Li, Mingwan; Tian, Rui; Yan, Dongpeng; Liang, Ruizheng; Wei, Min; Evans, David G; Duan, Xue

    2016-03-28

    A flexible ultrathin film based on alternate assembly of a sodium polyacrylate (PAA) modified styrylbiphenyl derivative (BTBS) and layered double hydroxide nanosheets is fabricated, which exhibits pressure-responsive photoluminescence with a high sensitivity and good reversibility. PMID:26950695

  8. Coherent perfect absorption in an all-dielectric metasurface

    NASA Astrophysics Data System (ADS)

    Zhu, Weiren; Xiao, Fajun; Kang, Ming; Premaratne, Malin

    2016-03-01

    We design and analyze an ultra-thin metasurface consists of mono-layer all-dielectric fishnet structure. It is demonstrated that coherent perfect absorption (CPA) can be achieved in such a metasurface, and the coherent absorptivity is controllable from 0.38% to 99.85% by phase modulation. The angular selectivity of the metasurface shows the feasibility of CPA in oblique incidence circumstances, where the CPA frequency splits into two frequency bands for TE and TM polarizations. Further study reveals that while retaining CPA, the CPA frequency of the metasurface can be manipulated from 8.56 to 13.47 GHz by solely adjusting the thickness of the fishnet metasurface.

  9. Controlling birefringence in dielectrics

    NASA Astrophysics Data System (ADS)

    Danner, Aaron J.; Tyc, Tomáš; Leonhardt, Ulf

    2011-06-01

    Birefringence, from the very essence of the word itself, refers to the splitting of light rays into two parts. In natural birefringent materials, this splitting is a beautiful phenomenon, resulting in the perception of a double image. In optical metamaterials, birefringence is often an unwanted side effect of forcing a device designed through transformation optics to operate in dielectrics. One polarization is usually implemented in dielectrics, and the other is sacrificed. Here we show, with techniques beyond transformation optics, that this need not be the case, that both polarizations can be controlled to perform useful tasks in dielectrics, and that rays, at all incident angles, can even follow different trajectories through a device and emerge together as if the birefringence did not exist at all. A number of examples are shown, including a combination Maxwell fisheye/Luneburg lens that performs a useful task and is achievable with current fabrication materials.

  10. Dielectric assist accelerating structure

    NASA Astrophysics Data System (ADS)

    Satoh, D.; Yoshida, M.; Hayashizaki, N.

    2016-01-01

    A higher-order TM02 n mode accelerating structure is proposed based on a novel concept of dielectric loaded rf cavities. This accelerating structure consists of ultralow-loss dielectric cylinders and disks with irises which are periodically arranged in a metallic enclosure. Unlike conventional dielectric loaded accelerating structures, most of the rf power is stored in the vacuum space near the beam axis, leading to a significant reduction of the wall loss, much lower than that of conventional normal-conducting linac structures. This allows us to realize an extremely high quality factor and a very high shunt impedance at room temperature. A simulation of a 5 cell prototype design with an existing alumina ceramic indicates an unloaded quality factor of the accelerating mode over 120 000 and a shunt impedance exceeding 650 M Ω /m at room temperature.

  11. Dielectric Constant of Suspensions

    NASA Astrophysics Data System (ADS)

    Mendelson, Kenneth S.; Ackmann, James J.

    1997-03-01

    We have used a finite element method to calculate the dielectric constant of a cubic array of spheres. Extensive calculations support preliminary conclusions reported previously (K. Mendelson and J. Ackmann, Bull. Am. Phys. Soc. 41), 657 (1996).. At frequencies below 100 kHz the real part of the dielectric constant (ɛ') shows oscillations as a function of the volume fraction of suspension. These oscillations disappear at low conductivities of the suspending fluid. Measurements of the dielectric constant (J. Ackmann, et al., Ann. Biomed. Eng. 24), 58 (1996). (H. Fricke and H. Curtis, J. Phys. Chem. 41), 729 (1937). are not sufficiently sensitive to show oscillations but appear to be consistent with the theoretical results.

  12. PREFACE: Dielectrics 2013

    NASA Astrophysics Data System (ADS)

    Hadjiloucas, Sillas; Blackburn, John

    2013-11-01

    This volume records the 42nd Dielectrics Group Proceedings of the Dielectrics Conference that took place at the University of Reading UK from 10-12 April 2013. The meeting is part of the biennial Dielectrics series of the Dielectrics Group, and formerly Dielectrics Society, and is organised by the Institute of Physics. The conference proceedings showcase some of the diversity and activity of the Dielectrics community worldwide, and bring together contributions from academics and industrial researchers with a diverse background and experiences from the Physics, Chemistry and Engineering communities. It is interesting to note some continuing themes such as Insulation/HV Materials, Dielectric Spectroscopy, Dielectric Measurement Techniques and Ferroelectric materials have a growing importance across a range of technologically important areas from the Energy sector to Materials research, Semiconductor and Electronics industries, and Metrology. We would like to thank all of our colleagues and friends in the Dielectrics community who have supported this event by contributing manuscripts and participating in the event. The conference has provided excellent networking opportunities for all delegates. Our thanks go also to our theme chairs: Dr Stephen Dodd (University of Leicester) on Insulation/HV Materials, Professor Darryl Almond (University of Bath) on Dielectric Spectroscopy, Dr John Blackburn (NPL) on Dielectric Measurement Techniques and Professor Anthony R West (University of Sheffield) on Ferroelectric Materials. We would also like to thank the other members of the Technical Programme Committee for their support, and refereeing the submitted manuscripts. Our community would also like to wish a full recovery to our plenary speaker Prof John Fothergill (City University London) who was unexpectedly unable to give his talk as well as thank Professor Alun Vaughan for stepping in and giving an excellent plenary lecture in his place at such very short notice. We are also

  13. Electric field effect in ultrathin black phosphorus

    SciTech Connect

    Koenig, Steven P.; Schmidt, Hennrik; Doganov, Rostislav A.; Castro Neto, A. H.; Özyilmaz, Barbaros

    2014-03-10

    Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO{sub 2} and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm{sup 2}/Vs and drain current modulation of over 10{sup 3}. At low temperatures, the on-off ratio exceeds 10{sup 5}, and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation.

  14. Ultrathin optical design for organic photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Man, J. X.; Luo, D. Y.; Yu, L. M.; Wang, D. K.; Liu, Z.; Lu, Z. H.

    2015-05-01

    A trilayer ultrathin-film model concept had been adapted to maximize optical absorption of organic photovoltaic cells (OPVs) with a structure of transparent-electrode/highly-absorbing active material/metal. As demonstrated, device with the structure of ITO/Lead phthalocyanine (SubPc):Buckerminster fullerene (C60) (1:4 wt%)/Al had been studied. It is found that more than 90% optical absorption can be obtained in the device with a broaden wavelength range of 480-620 nm. The calculated optical electric fields shows that the unusually high optical absorption is due to the enhanced optical interference inside the OPVs device. This work paved a new way to design the OPVs device.

  15. Self-Organized Ultrathin Oxide Nanocrystals

    SciTech Connect

    Huo, Ziyang; Tsung, Chia-kuang; Huang, Wenyu; Fardy, Melissa; Yan, Ruoxue; Li, Yadong; Yang, Piedong; Zhang, Xiaofeng

    2009-01-08

    Sub-2-nm (down to one-unit cell) uniform oxide nanocrystals and highly ordered superstructures were obtained in one step using oleylamine and oleic acid as capping and structure directing agents. The cooperative nature of the nanocrystal growth and assembly resulted in mesoscopic one-dimensional ribbon-like superstructures made of these ultrathin nanocrystals. The process reported here is general and can be readily extended to the production of many other transition metal (TiO2, ZnO, Nb2O5) and rare earth oxide (Eu2O3, Sm2O3, Er2O3, Y2O3, Tb2O3, and Yb2O3) systems.

  16. Ultra-thin microporous/hybrid materials

    DOEpatents

    Jiang, Ying-Bing; Cecchi, Joseph L.; Brinker, C. Jeffrey

    2012-05-29

    Ultra-thin hybrid and/or microporous materials and methods for their fabrication are provided. In one embodiment, the exemplary hybrid membranes can be formed including successive surface activation and reaction steps on a porous support that is patterned or non-patterned. The surface activation can be performed using remote plasma exposure to locally activate the exterior surfaces of porous support. Organic/inorganic hybrid precursors such as organometallic silane precursors can be condensed on the locally activated exterior surfaces, whereby ALD reactions can then take place between the condensed hybrid precursors and a reactant. Various embodiments can also include an intermittent replacement of ALD precursors during the membrane formation so as to enhance the hybrid molecular network of the membranes.

  17. Fracture and fatigue of ultrathin nanoporous polymer films

    NASA Astrophysics Data System (ADS)

    Kearney, Andrew V.

    Nanoporous polymer layers are being considered for a range of emerging nanoscale applications, from low permittivity materials for interlayer dielectrics in microelectronics and anti-reflective coatings in optical technologies, to biosensors and size-selective membranes for biological applications. Polymer thin films have inherently low elastic modulus, strength and hardness, but exhibit fracture properties that are higher than those reported for glass, ceramic, and even some metal layers. However, constraint of a ductile polymer between two elastic layers is expected to affect the local plasticity ahead of a crack tip and its contribution to the film adhesion with films below a micron in thickness. Additionally, nanoporosity would be expected to have a deleterious effect on mechanical properties, producing materials and layers that are structurally weaker than fully dense versions they replace. Therefore, the integration of these nanoporous polymer layer at nanometer thicknesses would present significantly processing and mechanical reliability challenges. In this dissertation, surprising evidence is presented that nanoporous polymer films exhibit increasing fracture energy with increasing porosity. Such behavior is in stark contrast to a wide range of reported behavior for porous solids. A ductile nano-void growth and coalescence fracture mechanics-based model is presented to rationalize the increase in fracture toughness of the voided polymer film. The model is shown to explain the behavior in terms of a specific scaling of the size of the pores with pore volume fraction. It is demonstrated that the pore size must increase with close to a linear dependence on the volume fraction in order to increase rather than decrease the fracture energy. Independent characterization of the pore size as a function of volume fraction is shown to confirm predictions made by the model. The fracture behavior of these constrained polymer films are also examined with film thickness

  18. Multilayer dielectric diffraction gratings

    DOEpatents

    Perry, Michael D.; Britten, Jerald A.; Nguyen, Hoang T.; Boyd, Robert; Shore, Bruce W.

    1999-01-01

    The design and fabrication of dielectric grating structures with high diffraction efficiency used in reflection or transmission is described. By forming a multilayer structure of alternating index dielectric materials and placing a grating structure on top of the multilayer, a diffraction grating of adjustable efficiency, and variable optical bandwidth can be obtained. Diffraction efficiency into the first order in reflection varying between 1 and 98 percent has been achieved by controlling the design of the multilayer and the depth, shape, and material comprising the grooves of the grating structure. Methods for fabricating these gratings without the use of ion etching techniques are described.

  19. Multilayer dielectric diffraction gratings

    DOEpatents

    Perry, M.D.; Britten, J.A.; Nguyen, H.T.; Boyd, R.; Shore, B.W.

    1999-05-25

    The design and fabrication of dielectric grating structures with high diffraction efficiency used in reflection or transmission is described. By forming a multilayer structure of alternating index dielectric materials and placing a grating structure on top of the multilayer, a diffraction grating of adjustable efficiency, and variable optical bandwidth can be obtained. Diffraction efficiency into the first order in reflection varying between 1 and 98 percent has been achieved by controlling the design of the multilayer and the depth, shape, and material comprising the grooves of the grating structure. Methods for fabricating these gratings without the use of ion etching techniques are described. 7 figs.

  20. Thermally switchable dielectrics

    DOEpatents

    Dirk, Shawn M.; Johnson, Ross S.

    2013-04-30

    Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

  1. Dielectric behaviour of polycarbonate

    NASA Astrophysics Data System (ADS)

    El-Shabasy, M.; Riad, A. S.

    1996-05-01

    The dielectric constant and the dielectric loss of polycarbonate are investigated in the frequency range 30-10 5 Hz and at temperature from 297 to 365 K. The frequency dependence of the impedance spectra plotted in the complex plane shows semicircles. The system could be represented by an equivalent circuit of a bulk resistance in series with a parallel surface resistance-capacitance combination. The Cole-Cole diagrams have been used to determine the molecular relaxation time τ. The temperature dependence of τ is expressed by a thermally activated process. Analysis of the AC conductivity reveals semiconducting features based predominantly on a hopping mechanism.

  2. A New NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA): Application to Angle-Resolved X-ray Photoelectron Spectroscopy of HfO2, ZrO2, HfSiO4, and ZrSiO4 Films on Silicon

    SciTech Connect

    Powell, C.J.; Smekal, W.; Werner, W.S.M.

    2005-09-09

    We describe a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA). This database provides data for the many parameters needed in quantitative Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). In addition, AES and XPS spectra can be simulated for layered samples. The simulated spectra, for layer compositions and thicknesses specified by the user, can be compared with measured spectra. The layer compositions and thicknesses can then be adjusted to find maximum consistency between simulated and measured spectra. In this way, AES and XPS can provide more detailed characterization of multilayer thin-film materials. We report on the use of SESSA for determining the thicknesses of HfO2, ZrO2, HfSiO4, and ZrSiO4 films on Si by angle-resolved XPS. Practical effective attenuation lengths (EALs) have been computed from SESSA as a function of film thickness and photoelectron emission angle (i.e., to simulate the effects of tilting the sample). These EALs have been compared with similar values obtained from the NIST Electron Effective-Attenuation-Length Database (SRD 82). Generally good agreement was found between corresponding EAL values, but there were differences for film thicknesses less than the inelastic mean free path of the photoelectrons in the overlayer film. These differences are due to a simplifying approximation in the algorithm used to compute EALs in SRD 82. SESSA, with realistic cross sections for elastic and inelastic scattering in the film and substrate materials, is believed to provide more accurate EALs than SRD 82 for thin-film thickness measurements, particularly in applications where the film and substrate have different electron-scattering properties.

  3. A New NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA): Application to Angle-Resolved X-ray Photoelectron Spectroscopy of HfO2, ZrO2, HfSiO4, and ZrSiO4 Films on Silicon

    NASA Astrophysics Data System (ADS)

    Powell, C. J.; Smekal, W.; Werner, W. S. M.

    2005-09-01

    We describe a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA). This database provides data for the many parameters needed in quantitative Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). In addition, AES and XPS spectra can be simulated for layered samples. The simulated spectra, for layer compositions and thicknesses specified by the user, can be compared with measured spectra. The layer compositions and thicknesses can then be adjusted to find maximum consistency between simulated and measured spectra. In this way, AES and XPS can provide more detailed characterization of multilayer thin-film materials. We report on the use of SESSA for determining the thicknesses of HfO2, ZrO2, HfSiO4, and ZrSiO4 films on Si by angle-resolved XPS. Practical effective attenuation lengths (EALs) have been computed from SESSA as a function of film thickness and photoelectron emission angle (i.e., to simulate the effects of tilting the sample). These EALs have been compared with similar values obtained from the NIST Electron Effective-Attenuation-Length Database (SRD 82). Generally good agreement was found between corresponding EAL values, but there were differences for film thicknesses less than the inelastic mean free path of the photoelectrons in the overlayer film. These differences are due to a simplifying approximation in the algorithm used to compute EALs in SRD 82. SESSA, with realistic cross sections for elastic and inelastic scattering in the film and substrate materials, is believed to provide more accurate EALs than SRD 82 for thin-film thickness measurements, particularly in applications where the film and substrate have different electron-scattering properties.

  4. AFM, ellipsometry, XPS and TEM on ultra-thin oxide/polymer nanocomposite layers in organic thin film transistors.

    PubMed

    Fian, A; Haase, A; Stadlober, B; Jakopic, G; Matsko, N B; Grogger, W; Leising, G

    2008-03-01

    Here we report on the fabrication and characterization of ultra-thin nanocomposite layers used as gate dielectric in low-voltage and high-performance flexible organic thin film transistors (oTFTs). Reactive sputtered zirconia layers were deposited with low thermal exposure of the substrate and the resulting porous oxide films with high leakage currents were spin-coated with an additional layer of poly-alpha-methylstyrene (P alphaMS). After this treatment a strong improvement of the oTFT performance could be observed; leakage currents could be eliminated almost completely. In ellipsometric studies a higher refractive index of the ZrO(2)/P alphaMS layers compared to the "as sputtered" zirconia films could be detected without a significant enhancement of the film thickness. Atomic force microscopy (AFM) measurements of the surface topography clearly showed a surface smoothing after the P alphaMS coating. Further studies with X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) also indicated that the polymer definitely did not form an extra layer. The polymer chains rather (self-)assemble in the nano-scaled interspaces of the porous oxide film giving an oxide-polymer "nanocomposite" with a high oxide filling grade resulting in high dielectric constants larger than 15. The dielectric strength of more than 1 MV cm(-1) is in good accordance with the polymer-filled interspaces. PMID:17952415

  5. Probing the ultrathin limit of hyperbolic metamaterial: nonlocality induced topological transitions (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Chen, Long; Zhang, Cheng; Zhou, Jing; Guo, L. Jay

    2015-09-01

    An ideal hyperbolic metamaterial (HMM), which has a perfect hyperbolic dispersion curve, theoretically can support modes with indefinite wavenumbers, leading to large photon local density of states (LDOS) and many applications such as enhancing light-matter interactions, spontaneous emission and thermal radiation. Here in this presentation, HMMs based on ultrathin metal-dielectric multilayers have been studied by considering the nonlocal response of electrons in metal. Based on the hydrodynamic model of the nonlocal response, we investigate the effect of nonlocality on the performance (dispersion relation, ray refraction, LDOS and spontaneous emission) of HMMs when gradually approaching the ultrathin limit of the unit cell. We show that nonlocality will induce topological transitions of the iso-frequency surfaces and limit the wavenumber as well as LDOS for both type I and type II HMMs. Under nonlocal treatment, the iso-frequency surface of type II HMM transforms from a hyperbola to a bullet shape, while for type I HMM, the surface splits into two branches: a cylindrical-like branch at high k region and an elliptical branch at the low k region. In the high k region, the nonlocality set a cut-off k for the allowed wavenumbers in both type I and type II HMMs. This cut-off k which is defined by the electron Fermi velocity of the metal intrinsically limits the LDOS and light-matter interactions. These results indicate that in the aim of achieving high performance HMMs, merely thinning the constituent films according to the local theories is no longer valid.

  6. MoS{sub 2} functionalization for ultra-thin atomic layer deposited dielectrics

    SciTech Connect

    Azcatl, Angelica; McDonnell, Stephen; Santosh, K.C.; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Lu, Ning; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.; Mordi, Greg I.; Kim, Jiyoung

    2014-03-17

    The effect of room temperature ultraviolet-ozone (UV-O{sub 3}) exposure of MoS{sub 2} on the uniformity of subsequent atomic layer deposition of Al{sub 2}O{sub 3} is investigated. It is found that a UV-O{sub 3} pre-treatment removes adsorbed carbon contamination from the MoS{sub 2} surface and also functionalizes the MoS{sub 2} surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS{sub 2} surface and provides nucleation sites for atomic layer deposition of Al{sub 2}O{sub 3}. The enhanced nucleation is found to be dependent on the thin film deposition temperature.

  7. Molds for cable dielectrics

    DOEpatents

    Roose, L.D.

    1996-12-10

    Molds for use in making end moldings for high-voltage cables are described wherein the dielectric insulator of a cable is heated and molded to conform to a desired shape. As a consequence, high quality substantially bubble-free cable connectors suitable for mating to premanufactured fittings are made. 5 figs.

  8. Molds for cable dielectrics

    DOEpatents

    Roose, Lars D.

    1996-01-01

    Molds for use in making end moldings for high-voltage cables are described wherein the dielectric insulator of a cable is heated and molded to conform to a desired shape. As a consequence, high quality substantially bubble-free cable connectors suitable for mating to premanufactured fittings are made.

  9. Interfaces: nanometric dielectrics

    NASA Astrophysics Data System (ADS)

    Lewis, T. J.

    2005-01-01

    The incorporation of nanometric size particles in a matrix to form dielectric composites shows promise of materials (nanodielectrics) with new and improved properties. It is argued that the properties of the interfaces between the particles and the matrix, which will themselves be of nanometric dimensions, will have an increasingly dominant role in determining dielectric performance as the particle size decreases. The forces that determine the electrical and dielectric properties of interfaces are considered, with emphasis on the way in which they might influence composite behaviour. A number of examples are given in which interfaces at the nanometric level exercise both passive and active control over dielectric, optical and conductive properties. Electromechanical properties are also considered, and it is shown that interfaces have important electrostrictive and piezoelectric characteristics. It is demonstrated that the process of poling, namely subjecting macroscopic composite materials to electrical stress and raised temperatures to create piezoelectric materials, can be explained in terms of optimizing the collective response of the nanometric interfaces involved. If the electrical and electromechanical features are coupled to the long-established electrochemical properties, interfaces represent highly versatile active elements with considerable potential in nanotechnology.

  10. Dielectric elastomer memory

    NASA Astrophysics Data System (ADS)

    O'Brien, Benjamin M.; McKay, Thomas G.; Xie, Sheng Q.; Calius, Emilio P.; Anderson, Iain A.

    2011-04-01

    Life shows us that the distribution of intelligence throughout flexible muscular networks is a highly successful solution to a wide range of challenges, for example: human hearts, octopi, or even starfish. Recreating this success in engineered systems requires soft actuator technologies with embedded sensing and intelligence. Dielectric Elastomer Actuator(s) (DEA) are promising due to their large stresses and strains, as well as quiet flexible multimodal operation. Recently dielectric elastomer devices were presented with built in sensor, driver, and logic capability enabled by a new concept called the Dielectric Elastomer Switch(es) (DES). DES use electrode piezoresistivity to control the charge on DEA and enable the distribution of intelligence throughout a DEA device. In this paper we advance the capabilities of DES further to form volatile memory elements. A set reset flip-flop with inverted reset line was developed based on DES and DEA. With a 3200V supply the flip-flop behaved appropriately and demonstrated the creation of dielectric elastomer memory capable of changing state in response to 1 second long set and reset pulses. This memory opens up applications such as oscillator, de-bounce, timing, and sequential logic circuits; all of which could be distributed throughout biomimetic actuator arrays. Future work will include miniaturisation to improve response speed, implementation into more complex circuits, and investigation of longer lasting and more sensitive switching materials.

  11. Electrical and reliability characteristics of Mn-doped nano BaTiO3-based ceramics for ultrathin multilayer ceramic capacitor application

    NASA Astrophysics Data System (ADS)

    Gong, Huiling; Wang, Xiaohui; Zhang, Shaopeng; Tian, Zhibin; Li, Longtu

    2012-12-01

    Nano BaTiO3-based dielectric ceramics were prepared by chemical coating approach, which are promising for ultrathin multilayer ceramic capacitor (MLCC) applications. The doping effects of Mn element on the microstructures and dielectric properties of the ceramics were investigated. The degradation test and impedance spectroscopy were employed to study the resistance degradation and the conduction mechanism of Mn-doped nano-BaTiO3 ceramic samples. It has been found that the reliability characteristics greatly depended on the Mn-doped content. Moreover, the BaTiO3 ceramic with grain size in nanoscale is more sensitive to the Mn-doped content than that in sub-micron scale. The addition of 0.3 mol. % Mn is beneficial for improving the reliability of the nano BaTiO3-based ceramics, which is an important parameter for MLCC applications. However, further increasing the addition amount will deteriorate the performance of the ceramic samples.

  12. High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor

    SciTech Connect

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-06

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

  13. Model of dissipative dielectric elastomers

    NASA Astrophysics Data System (ADS)

    Chiang Foo, Choon; Cai, Shengqiang; Jin Adrian Koh, Soo; Bauer, Siegfried; Suo, Zhigang

    2012-02-01

    The dynamic performance of dielectric elastomer transducers and their capability of electromechanical energy conversion are affected by dissipative processes, such as viscoelasticity, dielectric relaxation, and current leakage. This paper describes a method to construct a model of dissipative dielectric elastomers on the basis of nonequilibrium thermodynamics. We characterize the state of the dielectric elastomer with kinematic variables through which external loads do work, and internal variables that measure the progress of the dissipative processes. The method is illustrated with examples motivated by existing experiments of polyacrylate very-high-bond dielectric elastomers. This model predicts the dynamic response of the dielectric elastomer and the leakage current behavior. We show that current leakage can be significant under large deformation and for long durations. Furthermore, current leakage can result in significant hysteresis for dielectric elastomers under cyclic voltage.

  14. Effects of the dielectric properties of the ceramic-solvent interface on the binding of proteins to oxide ceramics: a non-local electrostatic approach.

    PubMed

    Rubinstein, Alexander I; Sabirianov, Renat F; Namavar, Fereydoon

    2016-10-14

    The rapid development of nanoscience and nanotechnology has raised many fundamental questions that significantly impede progress in these fields. In particular, understanding the physicochemical processes at the interface in aqueous solvents requires the development and application of efficient and accurate methods. In the present work we evaluate the electrostatic contribution to the energy of model protein-ceramic complex formation in an aqueous solvent. We apply a non-local (NL) electrostatic approach that accounts for the effects of the short-range structure of the solvent on the electrostatic interactions of the interfacial systems. In this approach the aqueous solvent is considered as a non-ionic liquid, with the rigid and strongly correlated dipoles of the water molecules. We have found that an ordered interfacial aqueous solvent layer at the protein- and ceramic-solvent interfaces reduces the charging energy of both the ceramic and the protein in the solvent, and significantly increases the electrostatic contribution to their association into a complex. This contribution in the presented NL approach was found to be significantly shifted with respect to the classical model at any dielectric constant value of the ceramics. This implies a significant increase of the adsorption energy in the protein-ceramic complex formation for any ceramic material. We show that for several biocompatible ceramics (for example HfO2, ZrO2, and Ta2O5) the above effect predicts electrostatically induced protein-ceramic complex formation. However, in the framework of the classical continuum electrostatic model (the aqueous solvent as a uniform dielectric medium with a high dielectric constant ∼80) the above ceramics cannot be considered as suitable for electrostatically induced complex formation. Our results also show that the protein-ceramic electrostatic interactions can be strong enough to compensate for the unfavorable desolvation effect in the process of protein

  15. Interfacial diffusion behavior in Ni-BaTiO 3 MLCCs with ultra-thin active layers

    NASA Astrophysics Data System (ADS)

    Gong, Huiling; Wang, Xiaohui; Tian, Zhibin; Zhang, Hui; Li, Longtu

    2014-03-01

    The interfacial structure and diffusion behavior between the dielectric layers (BaTiO3) and internal electrode layers (Ni) in X5R-type multilayer ceramic capacitors (MLCCs, from -55°C to 85°C, at a temperature capacitance coefficient within ±15%) with ultra-thin active layers ( T = 1-3 µm) have been investigated by several microstructural techniques (SEM/TEM/HRTEM) with energy-dispersive x-ray spectroscopy (EDS). In the MLCC samples with different active layer thicknesses (1-3 µm), weak interfacial diffusion was observed between BaTiO3 and Ni. It was also found that the diffusion capability of Ni into the BaTiO3 layer was stronger than that of BaTiO3 to the Ni electrode, which indicated that the diffusion of Ni was the dominant factor for the interfacial diffusion behavior in the ultra-thin layered MLCCs. The mechanism of Ni diffusion is discussed in this study as well.

  16. Additional fluorine passivation to pyrolytic-N2O passivated ultrathin silicon oxide/Si(100) films

    NASA Astrophysics Data System (ADS)

    Yamada, Hiroshi

    2006-08-01

    To enhance the reliability of ultrathin silicon oxide/Si(100) films and clarify the effect of fluorine on it, in situ pyrolytic-gas passivation (PGP) using NF3 was simultaneously performed with the previously proposed PGP using N2O. As a result, the following synergistic effects of F and N passivation for the films were confirmed: The electrical characteristics, such as the time-dependent dielectric breakdown lifetime, potential barrier height energy of the oxide, and interface state density, were significantly improved. Quantitative analyses of F and N indicated that this is probably caused by microscopic structural changes in the oxide near the oxide-Si(100) substrate interface. It is, therefore, believed that F passivation effectively contributes to compensate the inconsistent-state bonding sites near the interface that remain with N passivation.

  17. Field Effect Modulation of Outer-Sphere Electrochemistry at Back-Gated, Ultrathin ZnO Electrodes.

    PubMed

    Kim, Chang-Hyun; Frisbie, C Daniel

    2016-06-15

    Here we report field-effect modulation of solution electrochemistry at 5 nm thick ZnO working electrodes prepared on SiO2/degenerately doped Si gates. We find that ultrathin ZnO behaves like a 2D semiconductor, in which charge carriers electrostatically induced by the back gate lead to band edge shift at the front electrode/electrolyte interface. This, in turn, manipulates the charge transfer kinetics on the electrode at a given electrode potential. Experimental results and the proposed model indicate that band edge alignment can be effectively modulated by 0.1-0.4 eV depending on the density of states in the semiconductor and the capacitance of the gate/dielectric stack. PMID:27249050

  18. Antenna with Dielectric Having Geometric Patterns

    NASA Technical Reports Server (NTRS)

    Dudley, Kenneth L. (Inventor); Elliott, Holly A. (Inventor); Cravey, Robin L. (Inventor); Connell, John W. (Inventor); Ghose, Sayata (Inventor); Watson, Kent A. (Inventor); Smith, Jr., Joseph G. (Inventor)

    2013-01-01

    An antenna includes a ground plane, a dielectric disposed on the ground plane, and an electrically-conductive radiator disposed on the dielectric. The dielectric includes at least one layer of a first dielectric material and a second dielectric material that collectively define a dielectric geometric pattern, which may comprise a fractal geometry. The radiator defines a radiator geometric pattern, and the dielectric geometric pattern is geometrically identical, or substantially geometrically identical, to the radiator geometric pattern.

  19. Ultrathin CuO nanorods: controllable synthesis and superior catalytic properties in styrene epoxidation.

    PubMed

    Jia, Wei; Liu, Yuxi; Hu, Pengfei; Yu, Rong; Wang, Yu; Ma, Lei; Wang, Dingsheng; Li, Yadong

    2015-05-25

    Ultrathin copper oxide (CuO) nanorods with diameters of ∼3.6 nm were obtained in one step using oleylamine (OAm) as both the solvent and the surface controller. The oriented attachment is responsible for the formation of the ultrathin CuO nanorods. Furthermore, this ultrathin nanostructure catalyst exhibited excellent activity and high styrene oxide yields in styrene epoxidation. PMID:25920405

  20. Broadband local dielectric spectroscopy

    NASA Astrophysics Data System (ADS)

    Labardi, M.; Lucchesi, M.; Prevosto, D.; Capaccioli, S.

    2016-05-01

    A route to extend the measurement bandwidth of local dielectric spectroscopy up to the MHz range has been devised. The method is based on a slow amplitude modulation at a frequency Ω of the excitation field oscillating at a frequency ω and the coherent detection of the modulated average electric force or force gradient at Ω. The cantilever mechanical response does not affect the measurement if Ω is well below its resonant frequency; therefore, limitations on the excitation field frequency are strongly reduced. Demonstration on a thin poly(vinyl acetate) film is provided, showing its structural relaxation spectrum on the local scale up to 45 °C higher than glass temperature, and nanoscale resolution dielectric relaxation imaging near conductive nanowires embedded in the polymer matrix was obtained up to 5 MHz frequency, with no physical reason to hinder further bandwidth extension.

  1. Temperature switchable polymer dielectrics.

    SciTech Connect

    Johnson, Ross Stefan

    2010-08-01

    Materials with switchable states are desirable in many areas of science and technology. The ability to thermally transform a dielectric material to a conductive state should allow for the creation of electronics with built-in safety features. Specifically, the non-desirable build-up and discharge of electricity in the event of a fire or over-heating would be averted by utilizing thermo-switchable dielectrics in the capacitors of electrical devices (preventing the capacitors from charging at elevated temperatures). We have designed a series of polymers that effectively switch from a non-conductive to a conductive state. The thermal transition is governed by the stability of the leaving group after it leaves as a free entity. Here, we present the synthesis and characterization of a series of precursor polymers that eliminate to form poly(p-phenylene vinylene) (PPV's).

  2. Dielectric coated wire antennas

    NASA Technical Reports Server (NTRS)

    Richmond, J. H.; Newman, E. H.

    1976-01-01

    An electrically thin dielectric insulating shell on an antenna composed of electrically thin circular cylindrical wires is examined. A moment method solution is obtained, and the insulating shell is modeled by equivalent volume polarization currents. These polarization currents are related in a simple manner to the surface charge density on the wire antenna. In this way the insulating shell causes no new unknowns to be introduced, and the size of the impedance matrix is the same as for the uninsulated wires. The insulation is accounted for entirely through a modification of the symmetric impedance matrix. This modification influences the current distribution, impedance, efficiency, field patterns, and scattering properties. The theory is compared with measurement for dielectric coated antennas in air.

  3. Inducing electric polarization in ultrathin insulating layers

    NASA Astrophysics Data System (ADS)

    Martinez-Castro, Jose; Piantek, Marten; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

    Studies of ultrathin polar oxide films have attracted the interest of researchers for a long time due to their different properties compared to bulk materials. However they present several challenges such as the difficulty in the stabilization of the polar surfaces and the limited success in tailoring their properties. Moreover, recently developed Van der Waals materials have shown that the stacking of 2D-layers trigger new collective states thanks to the interaction between layers. Similarly, interface phenomena emerge in polar oxides, like induced ferroelectricity. This represents a promising way for the creation of new materials with customized properties that differ from those of the isolated layers. Here we present a new approach for the fabrication and study of atomically thin insulating films. We show that the properties of insulating polar layers of sodium chloride (NaCl) can be engineered when they are placed on top of a charge modulated template of copper nitride (Cu2N). STM studies carried out in ultra-high vacuum and at low temperatures over NaCl/Cu2N/Cu(001) show that we are able to build up and stabilize interfaces of polar surface at the limit of one atomic layer showing new properties not present before at the atomic scale.

  4. Application of Infrared Nanooptics to Ultrathin Materials

    NASA Astrophysics Data System (ADS)

    Andreev, Gregory

    My thesis describes the study of nanoscale physics using infrared spectroscopy and nanoscopy methods. The first phase of my research was the development of new methods for tuning metamaterials, which possess custom tailored optical properties not easily found in nature. Working together with Tom Driscoll, I co-invented a simple yet effective method for tuning the magnetic permeability of a Split Ring Resonator based metamaterial. This is the topic of Chapter 1. My subsequent research dealt with near field optics, in particular the application of the infrared imaging method of scattering Scanning Nearfield Optical Microscopy to ultrathin materials such as single layer Graphene and 2nm thin SiO2 layers on Silicon. On both of these materials we demonstrated incredible sensitivity to ≤ 10x10x1nm3 volumes (Chapter 3). Thanks to the incredibly large momenta of the evanescent light utilized in sSNOM, we also discovered a rich array of previously unobserved physics in Graphene. In particular, we were able to observe the resonance enhancement of the SiO2 phonon by the presence of plasmon oscillations in Graphene (Chapter 2). Lastly, a large part of my thesis work also involved building the first cryogenic sSNOM with which we were able to directly image the metal to insulator transition in the correlated oxide: V2O3, shown in the last chapter.

  5. Crystallization Properties of Ultrathin Phase Change Films

    SciTech Connect

    Raoux,S.; Jordan-Sweet, J.; Kellock, A.

    2008-01-01

    The crystallization behavior of ultrathin phase change films was studied using time-resolved x-ray diffraction (XRD). Thin films of variable thickness between 1 and 50?nm of the phase change materials Ge2Sb2Te5 (GST), N-doped GST, Ge15Sb85, Sb2Te, and Ag- and In-doped Sb2Te were heated in a He atmosphere, and the intensity of the diffracted x-ray peaks was recorded. It was found for all materials that the crystallization temperature increases as the film thickness is reduced below 10?nm. The increase depends on the material and can be as high as 200? C for the thinnest films. The thinnest films that show XRD peaks are 2?nm for GST and N-GST, 1.5?nm for Sb2Te and AgIn-Sb2Te, and 1.3?nm for GeSb. This scaling behavior is very promising for the application of phase change materials to solid-state memory technology.

  6. Dielectric spectroscopy of polyaniline

    SciTech Connect

    Calleja, R.D.; Matveeva, E.M.

    1993-12-31

    Polyaniline films (PANI) are being considered as attractive new galvanic sources, electrochromic displays, chemical sensors, etc. So far much work has been done to study their optical, electrochemical and electrical properties. However, there are still doubts about the basic electric conductivity mechanisms of PANI. The aim of this paper is to study the influence of water molecules and acid anions on the properties of PANI films by dielectric spectroscopy.

  7. Low-k Dielectrics

    NASA Astrophysics Data System (ADS)

    Hayashi, Yoshihiro

    As CMOS transistors were scaled, interconnects to link them are also shrunk to reduce the line pitches [1-10]. As shown in Fig. 22.1, the interconnect pitches have been shrunk from 180 nm, 140 nm, and 100 nm for 65 [4], 45 [32], and 32 nm nodes [10] LSIs, respectively. To eliminate the interconnect parasitic capacitance, low-k dielectric films which have lower permittivity than the conventional silica (SiO2) dielectrics have been introduced. Figure 22.2 shows the technology trend of the k-value and the deposition process, in which the low-k films are deposited by spin-on-dielectric (SOD) method or plasma-enhanced CVD. In the case of SOD, precursor solution is poured on a rotated wafer, and the precursor film is heated to vaporize the solvent followed by reaction and densification to make a low-k film. In the case of PECVD [36, 42], on the other hand, precursor solution is vaporized with inert carrier gas such as He, and the precursor gas is introduced into PECVD chamber with RF power. The vaporized precursor gas is exited from plasma, depositing a low-k film on a wafer heated in high vacuum. The SOD method is advantageous to decrease the k-value, while PECVD method is superior in the adhesion strength due to the possibility of in-suite plasma surface treatment in vacuum just before the low-k deposition.

  8. A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling

    NASA Astrophysics Data System (ADS)

    Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.

    2016-03-01

    The charge coupling between the front and back gates is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOSFET. It is traditionally described by the classical Lim and Fossum model (Lim and Fossum, 1983). However, in the case of lightly-doped ultra-thin-body (UTB) SOI MOSFETs with ultra-thin gate dielectrics, significant deviations from this model have been observed and analyzed over the years. In this paper, we present a thorough review of special features of gate coupling in such devices, combining a large set of results from one-dimensional numerical simulations in classical and quantum-mechanical modes, experimental data and analytical modeling. We show that UTB SOI MOSFETs with ultra-thin gate dielectrics feature stronger modulation of the threshold voltage at the conduction side with opposite gate bias and much wider range of gate voltages for interface coupling than predicted by the Lim and Fossum model. These differences originate from both electrostatic and quantization effects. A simple analytical model taking into account these effects is presented. The model enables an easy assessment of the quantization-induced threshold voltage increase in a long-channel SOI MOSFET versus opposite gate bias and the electric field in the silicon film associated with gate decoupling.

  9. Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress

    NASA Astrophysics Data System (ADS)

    Raghavan, Nagarajan; Padovani, Andrea; Li, Xiang; Wu, Xing; Lip Lo, Vui; Bosman, Michel; Larcher, Luca; Leong Pey, Kin

    2013-09-01

    Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an "analog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 Å´) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (VCRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-κ-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event.

  10. Characterization of dielectric breakdown behavior by in situ transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Bonifacio, Cecile Semana

    stage of sintering. The thermal effects were found to be driven by reduction-oxidation reactions of nickel oxide with carbon. The presence of carbon promotes the removal of surface oxides at lower temperatures and, therefore, can accelerate densification. By the controlled application of electrical bias, EFAS conditions were reproduced during in situ TEM and revealed reduction of ultra-thin nickel oxide surface layers by electric field-induced dielectric breakdown. The results provide evidence for previously suggested effects of local electric field amplification at inter-particle contact areas, which, hence, triggers surface cleaning through electric field-induced dielectric breakdown.

  11. Properties of two-dimensional insulators: A DFT study of bimetallic oxide CrW2O9 clusters adsorption on MgO ultrathin films

    NASA Astrophysics Data System (ADS)

    Zhu, Jia; Zhang, Hui; Zhao, Ling; Xiong, Wei; Huang, Xin; Wang, Bin; Zhang, Yongfan

    2016-08-01

    Periodic density functional theory calculations have been performed to study the electronic properties of bimetallic oxide CrW2O9 clusters adsorbed on MgO/Ag(001) ultrathin films (<1 nm). Our results show that after deposition completely different structures, electronic properties and chemical reactivity of dispersed CrW2O9 clusters on ultrathin films are observed compared with that on the thick MgO surface. On the thick MgO(001) surface, adsorbed CrW2O9 clusters are distorted significantly and just a little electron transfer occurs from oxide surface to clusters, which originates from the formation of adsorption dative bonds at interface. Whereas on the MgO/Ag(001) ultrathin films, the resulting CrW2O9 clusters keep the cyclic structures and the geometries are similar to that of gas-phase [CrW2O9]-. Interestingly, we predicted the occurrence of a net transfer of one electron by direct electron tunneling from the MgO/Ag(001) films to CrW2O9 clusters through the thin MgO dielectric barrier. Furthermore, our work reveals a progressive Lewis acid site where spin density preferentially localizes around the Cr atom not the W atoms for CrW2O9/MgO/Ag(001) system, indicating a potentially good bimetallic oxide for better catalytic activities with respect to that of pure W3O9 clusters. As a consequence, present results reveal that the adsorption of bimetallic oxide CrW2O9 clusters on the MgO/Ag(001) ultrathin films provide a new perspective to tune and modify the properties and chemical reactivity of bimetallic oxide adsorbates as a function of the thickness of the oxide films.

  12. Tunable Dielectric Properties of Ferrite-Dielectric Based Metamaterial

    PubMed Central

    Bi, K.; Huang, K.; Zeng, L. Y.; Zhou, M. H.; Wang, Q. M.; Wang, Y. G.; Lei, M.

    2015-01-01

    A ferrite-dielectric metamaterial composed of dielectric and ferrite cuboids has been investigated by experiments and simulations. By interacting with the electromagnetic wave, the Mie resonance can take place in the dielectric cuboids and the ferromagnetic precession will appear in the ferrite cuboids. The magnetic field distributions show the electric Mie resonance of the dielectric cuboids can be influenced by the ferromagnetic precession of ferrite cuboids when a certain magnetic field is applied. The effective permittivity of the metamaterial can be tuned by modifying the applied magnetic field. A good agreement between experimental and simulated results is demonstrated, which confirms that these metamaterials can be used for tunable microwave devices. PMID:25993433

  13. Tunable dielectric properties of ferrite-dielectric based metamaterial.

    PubMed

    Bi, K; Huang, K; Zeng, L Y; Zhou, M H; Wang, Q M; Wang, Y G; Lei, M

    2015-01-01

    A ferrite-dielectric metamaterial composed of dielectric and ferrite cuboids has been investigated by experiments and simulations. By interacting with the electromagnetic wave, the Mie resonance can take place in the dielectric cuboids and the ferromagnetic precession will appear in the ferrite cuboids. The magnetic field distributions show the electric Mie resonance of the dielectric cuboids can be influenced by the ferromagnetic precession of ferrite cuboids when a certain magnetic field is applied. The effective permittivity of the metamaterial can be tuned by modifying the applied magnetic field. A good agreement between experimental and simulated results is demonstrated, which confirms that these metamaterials can be used for tunable microwave devices. PMID:25993433

  14. New silicone dielectric elastomers with a high dielectric constant

    NASA Astrophysics Data System (ADS)

    Zhang, Zhen; Liu, Liwu; Fan, Jiumin; Yu, Kai; Liu, Yanju; Shi, Liang; Leng, Jinsong

    2008-03-01

    Dielectric elastomers (Des) are a type of EAPs with unique electrical properties and mechanical properties: high actuation strains and stresses, fast response times, high efficiency, stability, reliability and durability. The excellent figures of merit possessed by dielectric elastomers make them the most performing materials which can be applied in many domains: biomimetics, aerospace, mechanics, medicals, etc. In this paper, we present a kind of electroactive polymer composites based on silicone Dielectric elastomers with a high dielectric constant. Novel high DEs could be realized by means of a composite approach. By filling an ordinary elastomer (e.g. silicone) with a component of functional ceramic filler having a greater dielectric permittivity, it is possible to obtain a resulting composite showing the fruitful combination of the matrix's advantageous elasticity and the filler's high permittivity. Here we add the ferroelectric relaxor ceramics (mainly BaTiO3) which has high dielectric constant (>3000) to the conventional silicone Dielectric elastomers, to get the dielectric elastomer which can exhibit high elastic energy densities induced by an electric field of about 15 MV/m. Tests of the physical and chemical properties of the dielectric elastomers are conducted, which verify our supposes and offer the experimental data supporting further researches.

  15. Swelling of ultrathin crosslinked polyamide water purification membranes

    NASA Astrophysics Data System (ADS)

    Chan, Edwin; Stafford, Christopher

    2013-03-01

    Polyamide (PA) ultrathin films represent the state-of-the-art nanofiltration and reverse osmosis membranes used in water desalination. The performance of these materials, such as permselectivity, is intimately linked with extent of swelling of the PA network. Thus, quantifying their swelling behavior would be a useful and simple route to understanding the specific network structural parameters that control membrane performance. In this work, we measure the swelling behavior of PA ultrathin films using X-ray reflectivity as a function of water hydration. By applying the Flory-Rehner theory used to describe the swelling behavior of polymer networks, we quantify the PA network properties including Flory interaction parameter and the monomer units between crosslinks. Finally, we demonstrate application of this measurement approach for characterizing the network properties of different types of PA ultrathin films relevant to water purification and discuss the relationship between network and transport properties. Materials Science and Engineering Division

  16. Ultra-thin Graphitic Film: Synthesis and Physical Properties.

    PubMed

    Kaplas, Tommi; Kuzhir, Polina

    2016-12-01

    A scalable technique of chemical vapor deposition (CVD) growth of ultra-thin graphitic film is proposed. Ultra-thin graphitic films grown by a one-step CVD process on catalytic copper substrate have higher crystallinity than pyrolytic carbon grown on a non-catalytic surface and appear to be more robust than a graphene monolayer. The obtained graphitic material, not thicker than 8 nm, survives during the transfer process from a Cu substrate without a template polymer layer, typically used in the graphene transfer process to protect graphene. This makes the transfer process much more simple and cost-effective. Having electrical and optical properties compatible with what was observed for a few layers of CVD graphene, the proposed ultra-thin graphitic film offers new avenues for implementing 2D materials in real-world devices. PMID:26831692

  17. Nonlinear characteristics in fracture strength test of ultrathin silicon die

    NASA Astrophysics Data System (ADS)

    Liu, Zunxu; Huang, YongAn; Xiao, Lin; Tang, Pengpeng; Yin, Zhouping

    2015-04-01

    The precise evaluation of fracture strength of ultrathin (<50 μm thick) silicon chips/ribbons plays a critical role in design of deformability and lifetime of flexible/stretchable electronics. In its three-point bending test, however, the classical linear theory used to convert the experimental fracture load into fracture strength value fails to match the emerged geometrically nonlinear characteristics for such an ultrathin silicon die. Here, we consider the geometric large deformation and present its nonlinear solution to more reliably evaluate the fracture stress of ultrathin specimen by virtue of the obtained experimental fracture load. A quite good agreement on experiments shows that the nonlinear analytical predictions allow a more comprehensive understanding for the effects of the silicon samples’ thickness on the transformation from linear relation to nonlinearity. The comparisons indicate that the fracture strength values are lower from linear evaluations, and to this the corresponding correction factor is defined to enhance the estimate precision.

  18. Ultra-thin Graphitic Film: Synthesis and Physical Properties

    NASA Astrophysics Data System (ADS)

    Kaplas, Tommi; Kuzhir, Polina

    2016-02-01

    A scalable technique of chemical vapor deposition (CVD) growth of ultra-thin graphitic film is proposed. Ultra-thin graphitic films grown by a one-step CVD process on catalytic copper substrate have higher crystallinity than pyrolytic carbon grown on a non-catalytic surface and appear to be more robust than a graphene monolayer. The obtained graphitic material, not thicker than 8 nm, survives during the transfer process from a Cu substrate without a template polymer layer, typically used in the graphene transfer process to protect graphene. This makes the transfer process much more simple and cost-effective. Having electrical and optical properties compatible with what was observed for a few layers of CVD graphene, the proposed ultra-thin graphitic film offers new avenues for implementing 2D materials in real-world devices.

  19. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies. PMID:26498319

  20. Ultra-thin single crystal perovskite ferroelectric on Silicon

    NASA Astrophysics Data System (ADS)

    Bakaul, Saidur; Serrao, Claudy; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Single crystalline ultra-thin films (sub-10 nm) of ferroelectric complex oxides are important for tunnelling memory devices. Commercially viable realization of such devices requires their integration with the peripheral Si-based input-output electronics. Integration of single crystalline films of such oxides using direct synthesis remains challenging due to the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. In this work we report epitaxial transfer of ultra-thin single crystalline, oxide films (down to 1 unit cell) onto Si substrates, at room temperature. The thickness of the transferred films has been confirmed by atomic force microscopy. Piezoelectric force microscopy shows ferroelectric property is retained in the transferred film. Electrical transport studies on these transferred ultra-thin films are ongoing.

  1. Surface-sensitive UHV dielectric studies of nanoscale organic thin films: Adsorption, crystallization, and sublimation

    NASA Astrophysics Data System (ADS)

    Underwood, Jason M.

    Nanoscale systems are small collections of atoms or molecules, which as a result of their limited extent, show measurable thermodynamic deviations from bulk samples of the same species. The deviations may result from purely finite-size effects, or may be due to an increased significance of the interaction between the nanoscale system and its container. Ultra-thin (<100 nm) films of organic molecules adsorbed on surfaces afford unique opportunities to study the interplay of forces relevant to nanoscale physics. This thesis describes the development of a novel ultra-high vacuum apparatus to study the behavior of adsorbed polar molecules via dielectric spectroscopy (UHV-DS). Ultra-thin films are grown and characterized in-situ. The use of interdigitated electrode capacitors and a ratio-transformer bridge technique yields resolutions of ˜1 aF and ˜10-5 ppm in the capacitance and loss tangent, respectively. Typical sensitivity is 10 aF per monolayer at 80 K. Results are given for studies on water, methanol, and Cp* (a synthetic molecular rotor). The desorption event in the dielectric spectra is correlated with thermal desorption spectroscopy. During growth of methanol films, we observe partial crystallization for temperatures above ≳ 100 K. Crystallization is also observed upon heating glassy films grown at 80 K. Finally, we discuss UHV-DS as a probe for solid thin-film vapor pressure measurements, and show that our data on methanol compare favorably with those in the literature.

  2. Method for laser welding ultra-thin metal foils

    DOEpatents

    Pernicka, J.C.; Benson, D.K.; Tracy, C.E.

    1996-03-26

    A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld. 5 figs.

  3. Method for laser welding ultra-thin metal foils

    DOEpatents

    Pernicka, John C.; Benson, David K.; Tracy, C. Edwin

    1996-01-01

    A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld.

  4. Enhanced charge storage of ultrathin polythiophene films within porous nanostructures.

    PubMed

    Nejati, Siamak; Minford, Thomas E; Smolin, Yuriy Y; Lau, Kenneth K S

    2014-06-24

    In a single step polymerization and coating, oxidative chemical vapor deposition (oCVD) has been used to synthesize unsubstituted polythiophene. Coatings have been conformally coated within porous nanostructures of anodized aluminum oxide, titanium dioxide, and activated carbon. Significant enhancement in charge capacity has been found with ultrathin polythiophene coatings that preserve the surface area and pore space of the nanostructures. Pseudocapacitors consisting of ultrathin polythiophene coated within activated carbon yielded increases of 50 and 250% in specific and volumetric capacitance compared with bare activated carbon. Devices were stable up to the 5000 cycles tested with only a 10% decrease in capacitance. PMID:24840296

  5. Ultrathin metallic coatings can induce quantum levitation between nanosurfaces

    NASA Astrophysics Data System (ADS)

    Boström, Mathias; Ninham, Barry W.; Brevik, Iver; Persson, Clas; Parsons, Drew F.; Sernelius, Bo E.

    2012-06-01

    There is an attractive Casimir-Lifshitz force between two silica surfaces in a liquid (bromobenze or toluene). We demonstrate that adding an ultrathin (5-50 Å) metallic nanocoating to one of the surfaces results in repulsive Casimir-Lifshitz forces above a critical separation. The onset of such quantum levitation comes at decreasing separations as the film thickness decreases. Remarkably, the effect of retardation can turn attraction into repulsion. From that we explain how an ultrathin metallic coating may prevent nanoelectromechanical systems from crashing together.

  6. Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

    NASA Astrophysics Data System (ADS)

    Djara, Vladimir; Czornomaz, Lukas; Deshpande, Veeresh; Daix, Nicolas; Uccelli, Emanuele; Caimi, Daniele; Sousa, Marilyne; Fompeyrine, Jean

    2016-01-01

    We present a tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture. The fabricated devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018/cm3 obtained by metal organic chemical vapor phase deposition and direct wafer bonding along with a 3.5-nm-thick Al2O3 gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The PE-ALD Al2O3 presents a bandgap of 7.0 eV, a k-value of 8.1 and a breakdown field of 8-10.5 MV/cm. A post-fabrication H2/Ar anneal applied to the PE-ALD Al2O3/In0.53Ga0.47As-OI gate stack yielded a low density of interface traps (Dit) of 7 × 1011/cm2 eV at Ec - E = -0.1 eV along with lower border trap density values than recently reported PE-ALD bi-layer Al2O3/HfO2 and thermal ALD HfO2 gate stacks deposited on In0.53Ga0.47As. The H2/Ar anneal also improved the subthreshold performance of the tri-gate InGaAs-OI JLFETs. After H2/Ar anneal, the long-channel (10 μm) device featured a threshold voltage (VT) of 0.25 V, a subthreshold swing (SS) of 88 mV/dec and a drain-induced barrier lowering (DIBL) of 65 mV/V, while the short-channel (160 nm) device exhibited a VT of 0.1 V, a SS of 127 mV/dec and a DIBL of 218 mV/V. Overall, the tri-gate InGaAs-OI JLFETs showed the best compromise in terms of VT, SS and DIBL compared to the other III-V JLFET architectures reported to date. However, a 15× increase in access resistance was observed after H2/Ar anneal, significantly degrading the maximum drain current of the tri-gate InGaAs-OI JLFETs.

  7. Phase Formation Behavior in Ultrathin Iron Oxide.

    PubMed

    Jõgi, Indrek; Jacobsson, T Jesper; Fondell, Mattis; Wätjen, Timo; Carlsson, Jan-Otto; Boman, Mats; Edvinsson, Tomas

    2015-11-17

    Nanostructured iron oxides, and especially hematite, are interesting for a wide range of applications ranging from gas sensors to renewable solar hydrogen production. A promising method for deposition of low-dimensional films is atomic layer deposition (ALD). Although a potent technique, ALD of ultrathin films is critically sensitive to the substrate and temperature conditions where initial formation of islands and crystallites influences the properties of the films. In this work, deposition at the border of the ALD window forming a hybrid ALD/pulsed CVD (pCVD) deposition is utilized to obtain a deposition less sensitive to the substrate. A thorough analysis of iron oxide phases formation on two different substrates, Si(100) and SiO2, was performed. Films between 3 and 50 nm were deposited and analyzed with diffraction techniques, high-resolution Raman spectroscopy, and optical spectroscopy. Below 10 nm nominal film thickness, island formation and phase dependent particle crystallization impose constraints for deposition of phase pure iron oxides on non-lattice-matching substrates. Films between 10 and 20 nm thickness on SiO2 could effectively be recrystallized into hematite whereas for the corresponding films on Si(100), no recrystallization occurred. For films thicker than 20 nm, phase pure hematite can be formed directly with ALD/pCVD with very low influence of the substrate on either Si or SiO2. For more lattice matched substrates such as SnO2:F, Raman spectroscopy indicated formation of the hematite phase already for films with 3 nm nominal thickness and clearly for 6 nm films. Analysis of the optical properties corroborated the analysis and showed a quantum confined blue-shift of the absorption edge for the thinnest films. PMID:26506091

  8. Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

    NASA Astrophysics Data System (ADS)

    Kawanago, Takamasa; Oda, Shunri

    2016-01-01

    In this study, we apply self-assembled-monolayer (SAM)-based gate dielectrics to the fabrication of molybdenum disulfide (MoS2) field-effect transistors. A simple fabrication process involving the selective formation of a SAM on metal oxides in conjunction with the dry transfer of MoS2 flakes was established. A subthreshold slope (SS) of 69 mV/dec and no hysteresis were demonstrated with the ultrathin SAM-based gate dielectrics accompanied by a low gate leakage current. The small SS and no hysteresis indicate the superior interfacial properties of the MoS2/SAM structure. Cross-sectional transmission electron microscopy revealed a sharp and abrupt interface of the MoS2/SAM structure. The SAM-based gate dielectrics are found to be applicable to the fabrication of low-voltage MoS2 field-effect transistors and can also be extended to various layered semiconductor materials. This study opens up intriguing possibilities of SAM-based gate dielectrics in functional electronic devices.

  9. Square dielectric THz waveguides.

    PubMed

    Aflakian, N; Yang, N; LaFave, T; Henderson, R M; O, K K; MacFarlane, D L

    2016-06-27

    A holey cladding dielectric waveguide with square cross section is designed, simulated, fabricated and characterized. The TOPAS waveguide is designed to be single mode across the broad frequency range of 180 GHz to 360 GHz as shown by finite-difference time domain simulation and to robustly support simultaneous TE and TM mode propagation. The square fiber geometry is realized by pulling through a heat distribution made square by appropriate furnace design. The transmitted mode profile is imaged using a vector network analyzer with a pinhole at the receiver module. Good agreement between the measured mode distribution and the calculated mode distribution is demonstrated. PMID:27410645

  10. Low Dielectric Polymers

    NASA Technical Reports Server (NTRS)

    Venumbaka, Sreenivasulu R.; Cassidy, Patrick E.

    2002-01-01

    This report summarizes results obtained from research funded through Research Cooperative Agreement No. NCC-1-01033-"Low Dielectric Polymers" (from 5/10/01 through 5/09/02). Results are reported in three of the proposed research areas (Tasks 1-3 in the original proposal): (1) Repeat and confirm the preparation and properties of the new alkyl-substituted PEK, 6HC17-PEK, (2) Prepare and evaluate polymers derived from a highly fluorinated monomer, and (3) Prepare and evaluate new silicon and/or fluorine-containing polymers expected to retain useful properties at low temperature.

  11. Voltage sensor and dielectric material

    DOEpatents

    Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

    2006-10-17

    A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

  12. Microwave Propagation in Dielectric Fluids.

    ERIC Educational Resources Information Center

    Lonc, W. P.

    1980-01-01

    Describes an undergraduate experiment designed to verify quantitatively the effect of a dielectric fluid's dielectric constant on the observed wavelength of microwave radiation propagating through the fluid. The fluid used is castor oil, and results agree with the expected behavior within 5 percent. (Author/CS)

  13. Ferroelectric-dielectric tunable composites

    NASA Astrophysics Data System (ADS)

    Sherman, Vladimir O.; Tagantsev, Alexander K.; Setter, Nava; Iddles, David; Price, Tim

    2006-04-01

    The dielectric response of ferroelectric-dielectric composites is theoretically addressed. Dielectric permittivity, tunability (relative change of the permittivity driven by dc electric field), and loss tangent are evaluated for various composite models. The analytical results for small dielectric concentration and relative tunability are obtained in terms of the traditional electrostatic consideration. The results for large tunability are obtained numerically. A method is proposed for the evaluation of the tunability and loss at large concentrations of the dielectric. The basic idea of the method is to reformulate the effective medium approach in terms of electrical energies stored and dissipated in the composite. The important practical conclusion of the paper is that, for random ferroelectric-dielectric composite, the addition of small amounts of a linear dielectric into the tunable ferroelectric results in an increase of the tunability of the mixture. The loss tangent of such composites is shown to be virtually unaffected by the addition of moderate amounts of the low-loss dielectric. The experimental data for (Ba,Sr)TiO3 based composites are analyzed in terms of the theory developed and shown to be in a reasonable agreement with the theoretical results.

  14. Degradation Of Reflectors And Dielectrics

    NASA Technical Reports Server (NTRS)

    Bouquet, Frank L.; Cuddihy, Edward F.; Maag, Carl R., Jr.

    1987-01-01

    Report describes important degrading effects of atmosphere and outer-space environments on reflective surfaces and dielectrics. For reflective surfaces, terrestrial effects include soiling on glass surfaces and changing with time. Space effects include ultraviolet enhancement of contamination and possible surface erosion due to solar radiation, impact of debris, and interactions with atomic oxygen. Dielectrics similarly affected in both environments.

  15. 4-fold photocurrent enhancement in ultrathin nanoplasmonic perovskite solar cells.

    PubMed

    Cai, Boyuan; Peng, Yong; Cheng, Yi-Bing; Gu, Min

    2015-11-30

    Although perovskite materials have been widely investigated for thin-film photovoltaic devices due to the potential for high efficiency, their high toxicity has pressed the development of a solar cell structure of an ultra-thin absorber layer. But insufficient light absorption could be a result of ultra-thin perovskite films. In this paper, we propose a new nanoplasmonic solar cell that integrates metal nanoparticles at its rear/front surfaces of the perovskite layer. Plasmon-enhanced light scattering and near-field enhancement effects from lumpy sliver nanoparticles result in the photocurrent enhancement for a 50 nm thick absorber, which is higher than that for a 300 nm thick flat perovskite solar cell. We also predict the 4-fold photocurrent enhancement in an ultrathin perovskite solar cell with the absorber thickness of 10 nm. Our results pave a new way for ultrathin high-efficiency solar cells with either a lead-based or a lead-free perovskite absorption layer. PMID:26698816

  16. Synthesis and Characterization of Zirconium Tungstate Ultra-Thin Fibers

    SciTech Connect

    Zhang, Lifeng; Howe, Jane Y; Fong, Hao; Zhang, Yan

    2009-01-01

    This study reports an innovative method of electrospinning followed by pyrolysis to synthesize zirconium tungstate (ZrW2O8), a material with negative coefficient of thermal expansion (CTE), in ultra-thin fiber form. Morphologies and microstructures of the as-electrospun precursor fibers, the heat-treated intermediate fibers, and the final ZrW2O8 ultra-thin fibers were characterized by SEM, XRD, and TEM. The ZrW2O8 ultra-thin fibers had diameters in the sub-micrometer range with aspect ratios larger than 100; these fibers were polycrystalline, and consisted of single crystalline ZrW2O8 crystallites with sizes of 30-50 nm and surface roughness of several nanometers. The ZrW2O8 ultra-thin fibers are expected to outperform spherically, cylindrically, and/or irregularly shaped polycrystalline ZrW2O8 particles for the development of composites with precisely controlled CTEs. Additionally, this reported method could be utilized as a general approach to convert nano-scaled inorganic particles into fibers.

  17. Low dielectric polyimide fibers

    NASA Technical Reports Server (NTRS)

    Dorogy, William E., Jr. (Inventor); St.clair, Anne K. (Inventor)

    1994-01-01

    A high temperature resistant polyimide fiber that has a dielectric constant of less than 3 is presented. The fiber was prepared by first reacting 2,2-bis (4-(4aminophenoxy)phenyl) hexafluoropropane with 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride in an aprotic solvent to form a polyamic acid resin solution. The polyamic acid resin solution is then extruded into a coagulation medium to form polyamic acid fibers. The fibers are thermally cured to their polyimide form. Alternatively, 2,2-bis(4-(4-aminophenoxy)phenyl) hexafluoropropane is reacted with 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride to form a polyamic acid, and the polyamic acid is chemically converted to its polyimide form. The polyimide is then dissolved in a solvent to form a polyimide resin solution, and the polyimide resin is extruded into a coagulation medium to form a polyimide wet gel filament. In order to obtain polyimide fibers of increased tensile properties, the polyimide wet gel filaments are stretched at elevated temperatures. The tensile properties of the fibers were measured and found to be in the range of standard textile fibers. Polyimide fibers obtained by either method will have a dielectric constant similar to that of the corresponding polymer, viz., less than 3 at 10 GHz.

  18. Plasmonics without negative dielectrics

    NASA Astrophysics Data System (ADS)

    Della Giovampaola, Cristian; Engheta, Nader

    2016-05-01

    Plasmonic phenomena are exhibited in light-matter interaction involving materials whose real parts of permittivity functions attain negative values at operating wavelengths. However, such materials usually suffer from dissipative losses, thus limiting the performance of plasmon-based optical devices. Here, we utilize an alternative methodology that mimics a variety of plasmonic phenomena by exploiting the well-known structural dispersion of electromagnetic modes in bounded guided-wave structures filled with only materials with positive permittivity. A key issue in the design of such structures is prevention of mode coupling, which can be achieved by implementing thin metallic wires at proper interfaces. This method, which is more suitable for lower frequencies, allows designers to employ conventional dielectrics and highly conductive metals for which the loss is low at these frequencies, while achieving plasmonic features. We demonstrate, numerically and analytically, that this platform can provide surface plasmon polaritons, local plasmonic resonance, plasmonic cloaking, and epsilon-near-zero-based tunneling using conventional positive-dielectric materials.

  19. Dielectric laser accelerators

    NASA Astrophysics Data System (ADS)

    England, R. Joel; Noble, Robert J.; Bane, Karl; Dowell, David H.; Ng, Cho-Kuen; Spencer, James E.; Tantawi, Sami; Wu, Ziran; Byer, Robert L.; Peralta, Edgar; Soong, Ken; Chang, Chia-Ming; Montazeri, Behnam; Wolf, Stephen J.; Cowan, Benjamin; Dawson, Jay; Gai, Wei; Hommelhoff, Peter; Huang, Yen-Chieh; Jing, Chunguang; McGuinness, Christopher; Palmer, Robert B.; Naranjo, Brian; Rosenzweig, James; Travish, Gil; Mizrahi, Amit; Schachter, Levi; Sears, Christopher; Werner, Gregory R.; Yoder, Rodney B.

    2014-10-01

    The use of infrared lasers to power optical-scale lithographically fabricated particle accelerators is a developing area of research that has garnered increasing interest in recent years. The physics and technology of this approach is reviewed, which is referred to as dielectric laser acceleration (DLA). In the DLA scheme operating at typical laser pulse lengths of 0.1 to 1 ps, the laser damage fluences for robust dielectric materials correspond to peak surface electric fields in the GV /m regime. The corresponding accelerating field enhancement represents a potential reduction in active length of the accelerator between 1 and 2 orders of magnitude. Power sources for DLA-based accelerators (lasers) are less costly than microwave sources (klystrons) for equivalent average power levels due to wider availability and private sector investment. Because of the high laser-to-particle coupling efficiency, required pulse energies are consistent with tabletop microJoule class lasers. Combined with the very high (MHz) repetition rates these lasers can provide, the DLA approach appears promising for a variety of applications, including future high-energy physics colliders, compact light sources, and portable medical scanners and radiative therapy machines.

  20. Hexagonal boron nitride: Ubiquitous layered dielectric for two-dimensional electronics

    NASA Astrophysics Data System (ADS)

    Jain, Nikhil

    Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in "3D graphene" superlattice. First, CVD-grown graphene on h-BN substrate shows improved conductivity and resilience to thermally induced breakdown, as compared with graphene on SiO2, potentially useful for high-speed graphene devices and on-chip interconnects. h-BN is also explored as a gate dielectric for graphene field-effect transistor with 2D heterostructure design. The dielectric strength and tunneling behavior of h-BN are investigated, confirming its robust nature. Next, h-BN is studied as a passivation layer for graphene electronics. In addition to significant improvement in current density and breakdown threshold, fully encapsulated graphene exhibits minimal environmental sensitivity, a key benefit to 2D materials which have only surfaces. Lastly, reduction in interlayer carrier scattering is observed in a double-layered graphene setup with ultrathin h-BN multilayer as an interposing layer. The DFT simulation and Raman spectral analysis indicate reduction in interlayer scattering. The decoupling of the two graphene monolayers is further confirmed by electrical characterization, as compared with other referencing mono- and multilayer configurations. The heterostructure serves as the building element in "3D graphene", a versatile platform for future electronics.

  1. Dielectric Actuation of Polymers

    NASA Astrophysics Data System (ADS)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  2. Reversible optical switching of highly confined phonon-polaritons with an ultrathin phase-change material.

    PubMed

    Li, Peining; Yang, Xiaosheng; Maß, Tobias W W; Hanss, Julian; Lewin, Martin; Michel, Ann-Katrin U; Wuttig, Matthias; Taubner, Thomas

    2016-08-01

    Surface phonon-polaritons (SPhPs), collective excitations of photons coupled with phonons in polar crystals, enable strong light-matter interaction and numerous infrared nanophotonic applications. However, as the lattice vibrations are determined by the crystal structure, the dynamical control of SPhPs remains challenging. Here, we realize the all-optical, non-volatile, and reversible switching of SPhPs by controlling the structural phase of a phase-change material (PCM) employed as a switchable dielectric environment. We experimentally demonstrate optical switching of an ultrathin PCM film (down to 7 nm, <λ/1,200) with single laser pulses and detect ultra-confined SPhPs (polariton wavevector kp > 70k0, k0 = 2π/λ) in quartz. Our proof of concept allows the preparation of all-dielectric, rewritable SPhP resonators without the need for complex fabrication methods. With optimized materials and parallelized optical addressing we foresee application potential for switchable infrared nanophotonic elements, for example, imaging elements such as superlenses and hyperlenses, as well as reconfigurable metasurfaces and sensors. PMID:27213955

  3. Anisotropic effective permittivity of an ultrathin gold coating on optical fiber in air, water and saline solutions.

    PubMed

    Zhou, Wenjun; Mandia, David J; Barry, Seán T; Albert, Jacques

    2014-12-29

    The optical properties of an ultrathin discontinuous gold film in different dielectric surroundings are investigated experimentally by measuring the polarization-dependent wavelength shifts and amplitudes of the cladding mode resonances of a tilted fiber Bragg grating. The gold film was prepared by electron-beam evaporation and had an average thickness of 5.5 nm ( ± 1 nm). Scanning electron imaging was used to determine that the film is actually formed of individual particles with average lateral dimensions of 28 nm ( ± 8 nm). The complex refractive indices of the equivalent uniform film in air at a wavelength of 1570 nm were calculated from the measurements to be 4.84-i0.74 and 3.97-i0.85 for TM and TE polarizations respectively (compared to the value for bulk gold: 0.54-i10.9). Additionally, changes in the birefringence and dichroism of the films were measured as a function of the surrounding medium, in air, water and a saturated NaCl (salt) solution. These results show that the film has stronger dielectric behavior for TM light than for TE, a trend that increases with increasing surrounding index. Finally, the experimental results are compared to predictions from two widely used effective medium approximations, the generalized Maxwell-Garnett and Bruggeman theories for gold particles in a surrounding matrix. It is found that both of these methods fail to predict the observed behavior for the film considered. PMID:25607137

  4. Optical properties of large-area ultrathin MoS{sub 2} films: Evolution from a single layer to multilayers

    SciTech Connect

    Park, Jun Woo; So, Hyeon Seob; Kim, Sung; Choi, Suk-Ho; Lee, Hosun; Lee, Jinhwan; Lee, Changgu; Kim, Youngchan

    2014-11-14

    We investigated the optical properties of ultrathin MoS{sub 2} films (number of layers: N = 1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS{sub 2} film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS{sub 2} thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d{sup 2}ε(E)/dE{sup 2}), we determined several critical point energies. The d{sup 2}ε(E)/dE{sup 2} spectra showed doublet peaks around 3 eV corresponding to the C and D transitions, as well as doublet peaks around 2 eV corresponding to the A and B transitions. These doublet structures at 3 eV are attributed to the transitions in the Brillouin zone between the Γ and K points.

  5. Ultra-Thin Coatings Beautify Art

    NASA Technical Reports Server (NTRS)

    2013-01-01

    The craftsmen in the Roman Empire who constructed the Lycurgus Cup 17 centuries ago probably didn't think their artifact would survive for nearly 2,000 years as a prized possession. And they certainly couldn't have known that the technology they used to make it would eventually become an important part of space exploration. Carved from one solid mass, the cup is one of the few complete glass objects from that period, and the only one made from dichroic glass. Meaning "two-colored" in Greek, dichroic glass was originally created by adding trace amounts of gold and silver to a large volume of glass melt. The resulting medium partially reflects the light passing through it, causing an observer to see different colors depending on the direction of the light source. The Lycurgus Cup, for example, is famous for appearing green in daylight and red when lit at night, symbolic of the ripening grapes used to fill it with wine. NASA revitalized the production of dichroic glass in the 1950s and 1960s as a means of protecting its astronauts. Ordinary clear substances cannot protect human vision from the harsh rays of unfiltered sunlight, and everything from the human body to spacecraft sensors and computers are at risk if left unprotected from the radiation that permeates space. The microscopic amounts of metal present in dichroic glass make it an effective barrier against such harmful radiation. While the ancient manufacturing technique called for adding metals to glass melt, NASA developed a process in which metals are vaporized by electron beams in a vacuum chamber and then applied directly to surfaces in an ultra-thin film. The vapor condenses in the form of crystal structures, and the process is repeated for up to several dozen coatings. The resulting material, still only about 30 millionths of an inch thick, is sufficient to reflect radiation even while the glass, or polycarbonate, as in the case of space suit helmets, remains transparent to the human eye.

  6. Structural studies of ultrathin organic films

    NASA Astrophysics Data System (ADS)

    Yim, Hyun

    1998-11-01

    Ultrathin organic films have been a focus of research due to the growing interest in optoelectronics and molecular electronics. In both areas, it is believed that self-assembled (SA) films and Langmuir-Blodgett (LB) films may provide the desired control of order at the molecular level. The tethering of polyglutamate molecules to surfaces is of special interest due to nonlinear optical properties which can be achieved when the molecules are oriented. The tethering of poly(benzyl-L-glutamate) to silicon has been done by polymerization of benzyl-L-glutamate-N-carboxyanhydride using self-assembled monolayers with various concentrations of amino end groups as initiating layers. X-ray reflectivity results show that a minimum concentration of initiator sites on the surface is required. The second tethering system is a polystyrene brush. The polystyrene brush is expected to give strong sensitivity to solvent swelling. The structure of the polystyrene brush, which was chemically grafted to a substrate, in poor solvent and its change at different temperatures were investigated by neutron reflectometry. When temperature increases up to 30sp°C, both the thickness and roughness increase greatly, which indicates that the polystyrene brush changes from a collapsed state to a theta state. Hairy-rod polyimide molecules are of interest due to their interesting physical properties. Multilayer films of preformed polyimide molecules (6FDA-C18) have been obtained for the first time by the LB technique. The multilayer films do not display a distinctively periodic structure. Upon annealing for a few hours at 180sp°C, the structure relaxes slightly. The alkyl side chain substituted polyimides (BACBF/BPDA) can form metastable monolayers for which the pressure-area isotherms vary markedly with side chain length. For the polyimide with octadecyl side chains, a sharp reduction in zero pressure area occurs between 20 and 24sp°C, suggesting an important change in side chain mobility

  7. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

    NASA Astrophysics Data System (ADS)

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-10-01

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed

  8. Atomic layer deposition of hafnium oxide on germanium substrates

    NASA Astrophysics Data System (ADS)

    Delabie, Annelies; Puurunen, Riikka L.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc M.; Meuris, Marc; Viitanen, Minna M.; Brongersma, Hidde H.; de Ridder, Marco; Goncharova, Lyudmila V.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman

    2005-03-01

    Germanium combined with high-κ dielectrics has recently been put forth by the semiconductor industry as potential replacement for planar silicon transistors, which are unlikely to accommodate the severe scaling requirements for sub-45-nm generations. Therefore, we have studied the atomic layer deposition (ALD) of HfO2 high-κ dielectric layers on HF-cleaned Ge substrates. In this contribution, we describe the HfO2 growth characteristics, HfO2 bulk properties, and Ge interface. Substrate-enhanced HfO2 growth occurs: the growth per cycle is larger in the first reaction cycles than the steady growth per cycle of 0.04nm. The enhanced growth goes together with island growth, indicating that more than a monolayer coverage of HfO2 is required for a closed film. A closed HfO2 layer is achieved after depositing 4-5HfO2 monolayers, corresponding to about 25 ALD reaction cycles. Cross-sectional transmission electron microscopy images show that HfO2 layers thinner than 3nm are amorphous as deposited, while local epitaxial crystallization has occurred in thicker HfO2 films. Other HfO2 bulk properties are similar for Ge and Si substrates. According to this physical characterization study, HfO2 can be used in Ge-based devices as a gate oxide with physical thickness scaled down to 1.6nm.

  9. Dielectric permittivity of suspensions

    SciTech Connect

    Sushko, M. Ya.

    2007-08-15

    A strict macroscopic analysis of the limiting long-wavelength permittivity of a model suspension is presented in which the suspension is considered as a finely dispersed system consisting of isotropic dielectric balls with piecewise-continuous radial permittivity profile. The analysis is performed within the framework of the notion of compact groups of inhomogeneities and the procedure of field averaging over volumes significantly exceeding the scale of these groups. The indicated value is described by the Lorentz-Lorenz formula. The effective polarizability of balls in the suspension is reconstructed from their parameters and the parameters of the medium by means of integration. The result is valid for any concentration of the balls at which the suspension remains macroscopically homogeneous and isotropic with respect to the field and for an arbitrary difference between the ball and medium permittivities.

  10. Multilayer optical dielectric coating

    DOEpatents

    Emmett, John L.

    1990-01-01

    A highly damage resistant, multilayer, optical reflective coating includes alternating layers of doped and undoped dielectric material. The doping levels are low enough that there are no distinct interfaces between the doped and undoped layers so that the coating has properties nearly identical to the undoped material. The coating is fabricated at high temperature with plasma-assisted chemical vapor deposition techniques to eliminate defects, reduce energy-absorption sites, and maintain proper chemical stoichiometry. A number of differently-doped layer pairs, each layer having a thickness equal to one-quarter of a predetermined wavelength in the material are combined to form a narrowband reflective coating for a predetermined wavelength. Broadband reflectors are made by using a number of narrowband reflectors, each covering a portion of the broadband.

  11. The Dielectric Wall Accelerator

    SciTech Connect

    Caporaso, George J.; Chen, Yu-Jiuan; Sampayan, Stephen E.

    2009-01-01

    The Dielectric Wall Accelerator (DWA), a class of induction accelerators, employs a novel insulating beam tube to impress a longitudinal electric field on a bunch of charged particles. The surface flashover characteristics of this tube may permit the attainment of accelerating gradients on the order of 100 MV/m for accelerating pulses on the order of a nanosecond in duration. A virtual traveling wave of excitation along the tube is produced at any desired speed by controlling the timing of pulse generating modules that supply a tangential electric field to the tube wall. Because of the ability to control the speed of this virtual wave, the accelerator is capable of handling any charge to mass ratio particle; hence it can be used for electrons, protons and any ion. The accelerator architectures, key technologies and development challenges will be described.

  12. Structural, Dielectric, and Interface Properties of Crystalline Barium Silicate Films on Si(100): A Robust High-κ Material

    NASA Astrophysics Data System (ADS)

    Islam, S.; Hofmann, K. R.; Feldhoff, A.; Pfnür, H.

    2016-05-01

    The quality and crystallinity of ultrathin dielectric layers depend crucially on the details of interface formation and chemical stability. Using a combination of photoelectron (XPS) and electron-energy-loss spectroscopy, low-energy electron-diffraction, and transmission electron microscopy (TEM), we show that crystalline epitaxial layers of Ba2 SiO4 can be grown on Si(100) substrates from evaporated Ba in oxygen background atmosphere at 650 °C . Since the silicate is chemically by far more stable than the oxides of Si and Ba, an atomically sharp interface with no interface oxide is formed, as confirmed by XPS and TEM. However, the interface is rough on the atomic scale. dc and frequency-dependent electrical measurements reveal a relative dielectric constant of 22.8, low hysteresis in C V measurements, and low leakage currents but still fairly high interface trap densities.

  13. Molecular Imaging of Ultrathin Pentacene Films: Evidence for Homoepitaxy

    NASA Astrophysics Data System (ADS)

    Wu, Yanfei; Haugstad, Greg; Frisbie, C. Daniel

    2013-03-01

    Ultrathin polycrystalline films of organic semiconductors have received intensive investigations due to the critical role they play in governing the performance of organic thin film transistors. In this work, a variety of scanning probe microscopy (SPM) techniques have been employed to investigate ultrathin polycrystalline films (1-3 nm) of the benchmark organic semiconductor pentacene. By using spatially resolved Friction Force Microscopy (FFM), Kelvin Probe Force Microscopy (KFM) and Electrostatic Force Microscopy (EFM), an interesting multi-domain structure is revealed within the second layer of the films, characterized as two distinct friction and surface potential domains correlating with each other. The existence of multiple homoepitaxial modes within the films is thus proposed and examined. By employing lattice-revolved imaging using contact mode SPM, direct molecular evidence for the unusual homoepitaxy is obtained.

  14. Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures

    NASA Astrophysics Data System (ADS)

    Boulle, Olivier; Vogel, Jan; Yang, Hongxin; Pizzini, Stefania; de Souza Chaves, Dayane; Locatelli, Andrea; Menteş, Tevfik Onur; Sala, Alessandro; Buda-Prejbeanu, Liliana D.; Klein, Olivier; Belmeguenai, Mohamed; Roussigné, Yves; Stashkevich, Andrey; Chérif, Salim Mourad; Aballe, Lucia; Foerster, Michael; Chshiev, Mairbek; Auffret, Stéphane; Miron, Ioan Mihai; Gaudin, Gilles

    2016-05-01

    Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometre size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetization at the nanoscale. Chiral skyrmion structures have so far been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films, and under an external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures at room temperature and zero external magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure, which we explain as due to the large strength of the Dzyaloshinskii–Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions.

  15. Ultrathin and lightweight organic solar cells with high flexibility

    PubMed Central

    Kaltenbrunner, Martin; White, Matthew S.; Głowacki, Eric D.; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

    2012-01-01

    Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date. PMID:22473014

  16. Ultrathin and lightweight organic solar cells with high flexibility.

    PubMed

    Kaltenbrunner, Martin; White, Matthew S; Głowacki, Eric D; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

    2012-01-01

    Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date. PMID:22473014

  17. Features of noise in ultrathin gold nanowire structures

    NASA Astrophysics Data System (ADS)

    Handziuk, V.; Pud, S.; Coppola, M.; Kisner, A.; Vitusevich, S.

    2016-05-01

    Bundles of ultrathin gold nanowires (Au NWs, 2 nm in diameter) were fabricated and subsequently assembled onto electrodes. Electrical measurements and noise spectroscopy techniques were applied for sample characterization. The peculiarities of noise behavior in the system of bundles of ultrathin gold nanowires were studied. The measured power spectral density of flicker noise was proportional to current squared, which reflects ohmic behavior in NW structures. Lorentzian-shaped components were revealed in the noise spectra. They are suggested to be the result of the participation of molecules adsorbed on the NW surface in transport phenomena. The presence of molecular interfaces was confirmed by high-resolution transmission electron micrographs. The adsorbed molecules play an important role in charge transport and therefore determine electrical and noise properties of the NW structures. The results should be taken into account for the development of NW devices for sensing and molecular electronics applications.

  18. Ultrathin and lightweight organic solar cells with high flexibility

    NASA Astrophysics Data System (ADS)

    Kaltenbrunner, Martin; White, Matthew S.; Głowacki, Eric D.; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

    2012-04-01

    Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date.

  19. Preparation and Properties of Transparent Ultrathin Lanthanide-Complex Films.

    PubMed

    Li, Yali; Xu, Yang; Wang, Yige

    2016-07-25

    Highly transparent ultrathin films (UTFs) based on alternative layer-by-layer assembly of Eu- and Tb-based lanthanide complexes (LCs) and Mg-Al-layered double hydroxide (LDH) nanosheets are reported herein. UV-visible absorption and fluorescence spectroscopy showed an orderly growth of the two types of ultrathin films upon increasing the number of deposition cycles. AFM and SEM measurements indicate that the films feature periodic layered structures as well as uniform surface morphology. Luminescent investigations reveal that (LCs/LDH)n UTFs can detect Fe(3+) with relative selectivity and high sensitivity (Stern-Volmer constant KSV =8.43×10(3)  L mol(-1) ); this suggests that (LCs/LDH)n UTFs could be a promising luminescent probe for selectively sensing Fe(3+) ion. PMID:27320499

  20. Thermoelectric properties of an ultra-thin topological insulator.

    PubMed

    Islam, S K Firoz; Ghosh, T K

    2014-04-23

    Thermoelectric coefficients of an ultra-thin topological insulator are presented here. The hybridization between top and bottom surface states of a topological insulator plays a significant role. In the absence of a magnetic field, the thermopower increases and thermal conductivity decreases with an increase in the hybridization energy. In the presence of a magnetic field perpendicular to the ultra-thin topological insulator, thermoelectric coefficients exhibit quantum oscillations with inverse magnetic field, whose frequency is strongly modified by the Zeeman energy and whose phase factor is governed by the product of the Landé g-factor and the hybridization energy. In addition to the numerical results, the low-temperature approximate analytical results for the thermoelectric coefficients are also provided. It is also observed that for a given magnetic field these transport coefficients oscillate with hybridization energy, at a frequency that depends on the Landé g-factor. PMID:24694878