Science.gov

Sample records for zinc phosphide solar cells

  1. Photovoltaic cells employing zinc phosphide

    DOEpatents

    Barnett, Allen M.; Catalano, Anthony W.; Dalal, Vikram L.; Masi, James V.; Meakin, John D.; Hall, Robert B.

    1984-01-01

    A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

  2. Indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving

    1991-01-01

    The direction for InP solar cell research; reduction of cell cost; increase of cell efficiency; measurements needed to better understand cell performance; n/p versus p/n; radiation effects; major problems in cell contacting; and whether the present level of InP solar cell research in the USA should be maintained, decreased, or increased were considered.

  3. Zinc phosphide

    Integrated Risk Information System (IRIS)

    Zinc phoshide ; CASRN 1314 - 84 - 7 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Ef

  4. Determination of series resistance of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving

    1991-01-01

    The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

  5. Status of indium phosphide solar cell development at Spire

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

    1987-01-01

    On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

  6. Indium phosphide solar cells for laser power beaming applications

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Lasers can be used to transmit power to photovoltaic cells. Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very high efficiencies. This work reviews the modeling studies made on indium phosphide solar cells for such an application. These cells are known to be very radiation resistant and have a potential for high efficiency. Effects of cell series resistance, laser intensity, and temperature on cell performance have been discussed.

  7. Zinc Phosphide Poisoning

    PubMed Central

    Doğan, Erdal; Güzel, Abdulmenap; Çiftçi, Taner; Aycan, İlker; Çetin, Bedri; Kavak, Gönül Ölmez

    2014-01-01

    Zinc phosphide has been used widely as a rodenticide. Upon ingestion, it gets converted to phosphine gas in the body, which is subsequently absorbed into the bloodstream through the stomach and the intestines and gets captured by the liver and the lungs. Phosphine gas produces various metabolic and nonmetabolic toxic effects. Clinical symptoms are circulatory collapse, hypotension, shock symptoms, myocarditis, pericarditis, acute pulmonary edema, and congestive heart failure. In this case presentation, we aim to present the intensive care process and treatment resistance of a patient who ingested zinc phosphide for suicide purposes. PMID:25101186

  8. Radiation damage in proton irradiated indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Yamaguchi, Masafumi

    1986-01-01

    Indium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.

  9. Recent developments in indium phosphide space solar cell research

    NASA Technical Reports Server (NTRS)

    Brinker, David J.; Weinberg, Irving

    1987-01-01

    Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n + p and p + n configurations with total area efficiencies of 17.9 and 15.9 percent (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AM0 efficiency of 20.5 percent was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 to the 16th power/cu cm, respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n + p cells are more radiation resistant at higher fluences than the p + n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

  10. Recent developments in indium phosphide space solar cell research

    NASA Technical Reports Server (NTRS)

    Brinker, David J.; Weinberg, Irving

    1987-01-01

    Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

  11. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  12. Indium phosphide space solar cell research: Where we are and where we are going

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.; Weinberg, Irving

    1995-01-01

    Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

  13. Progress in indium phosphide solar cell research

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Swartz, Clifford K.; Hart, R. E., Jr.

    1989-01-01

    Progress, dating from the start of the Lewis program, is reviewed emphasizing processing techniques which have achieved the highest efficiencies in a given year. To date, the most significant achievement has been attainment of AM0 total area efficiencies approaching 19 percent. Although closed tube diffusion is not considered to be an optimum process, reasonably efficient 2cm x 2cm and 1cm x 2cm InP cells have been produced in quantity by this method with a satellite to be launched in 1990 using these cells. Proton irradiation of these relatively large area cells indicates radiation resistance comparable to that previously reported for smaller InP cells. A similar result is found for the initial proton irradiations of ITO/InP cells processed by D. C. sputtering. With respect to computer modelling, a comparison of n/p homojunction InP and GaAs cells of identical geometries and dopant concentrations has confirmed the superior radiation resistance of InP cells under 1 MeV electron irradiations.

  14. Optimal design study of high efficiency indium phosphide space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

  15. Comparative performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.; Parat, K. K.

    1987-01-01

    A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

  16. Indium phosphide solar cells - Recent developments and estimated performance in space

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, David J.

    1990-01-01

    The current status of indium phosphide solar cell research is reviewed. In the NASA research program, efficiencies of 18.8 percent were achieved for standard n/p homojunction InP cells while 17 percent was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 percent are feasible. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 percent.

  17. Effect of InAlAs window layer on efficiency of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.

  18. Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Landis, G. A.

    1991-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.

  19. Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

    1987-01-01

    Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

  20. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.

    1990-01-01

    Metalorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greaater than 16 percent AM0) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AM0 efficiency at 25 C.

  1. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greater than 16 percent AMO) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AMO efficiency at 25 C.

  2. 40 CFR 180.284 - Zinc phosphide; tolerances for residues.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 24 2011-07-01 2011-07-01 false Zinc phosphide; tolerances for... § 180.284 Zinc phosphide; tolerances for residues. (a) General. Tolerances are established for residues of the phosphine resulting from the use of the rodenticide zinc phosphide in or on the...

  3. 40 CFR 180.284 - Zinc phosphide; tolerances for residues.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 24 2014-07-01 2014-07-01 false Zinc phosphide; tolerances for... § 180.284 Zinc phosphide; tolerances for residues. (a) General. Tolerances are established for residues of the phosphine resulting from the use of the rodenticide zinc phosphide in or on the...

  4. 40 CFR 180.284 - Zinc phosphide; tolerances for residues.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 25 2013-07-01 2013-07-01 false Zinc phosphide; tolerances for... § 180.284 Zinc phosphide; tolerances for residues. (a) General. Tolerances are established for residues of the phosphine resulting from the use of the rodenticide zinc phosphide in or on the...

  5. 40 CFR 180.284 - Zinc phosphide; tolerances for residues.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 25 2012-07-01 2012-07-01 false Zinc phosphide; tolerances for... § 180.284 Zinc phosphide; tolerances for residues. (a) General. Tolerances are established for residues of the phosphine resulting from the use of the rodenticide zinc phosphide in or on the...

  6. Modelling and design of high performance indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Rhoads, Sandra L.; Barnett, Allen M.

    1989-01-01

    A first principles pn junction device model has predicted new designs for high voltage, high efficiency InP solar cells. Measured InP material properties were applied and device parameters (thicknesses and doping) were adjusted to obtain optimal performance designs. Results indicate that p/n InP designs will provide higher voltages and higher energy conversion efficiencies than n/p structures. Improvements to n/p structures for increased efficiency are predicted. These new designs exploit the high absorption capabilities, relatively long diffusion lengths, and modest surface recombination velocities characteristic of InP. Predictions of performance indicate achievable open-circuit voltage values as high as 943 mV for InP and a practical maximum AM0 efficiency of 22.5 percent at 1 sun and 27 C. The details of the model, the optimal InP structure and the effect of individual parameter variations on device performance are presented.

  7. Indium phosphide solar cells: status and prospects for use in space

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brinker, D. J.

    1986-01-01

    The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

  8. High-efficiency indium tin oxide/indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

    1989-01-01

    Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

  9. Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

    NASA Astrophysics Data System (ADS)

    Chuang, Chen

    Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

  10. A review of indium phosphide space solar cell fabrication technology

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Dingle, B.; Dingle, J.; Morrison, R.

    1990-01-01

    A review of the status of InP cell efficiency and of approaches to the reduction of cell cost is presented. The use of heteroepitaxial techniques such as InP-on-GaAs and InP-on-Si is discussed along with the use of chemical and mechanical techniques for removal and recovery of the substrate. The efficiency ultimately obtainable with designs made possible by such an approach is calculated.

  11. Indium phosphide/cadmium sulfide thin-film solar cells

    SciTech Connect

    Zanio, K.

    1980-02-01

    Thin-film InP/CdS structures were prepared by depositing, in sequence, ITO on a low-cost glass substrate, CdS on the ITO by thermal evaporation, and InP on the CdS by planar reactive deposition (PRD). Films of CdS, 15 ..mu..m thick, were recrystallized in flowing H/sub 2//H/sub 2/S at 500/sup 0/C. Lateral dimensions of typical grains were 50..mu..m with values up to 200 ..mu..m. The sheet resistance of the recrystallized CdS (RXCdS) was lowered from greater than 10/sup 5/ ..cap omega../O = cm/sup 2/ to values as low as 16 ..cap omega../O = cm/sup 2/ by annealing in either H/sub 2/ Cd atmospheres. Epitaxy of InP was undertaken on (100) InP at a substrate temperature of 320/sup 0/C. Room-temperature electron mobilities of about 2000 cm/sup 2//V-sec were found. Mobilities and hole concentrations of 60 cm/sup 2//V-sec and 10/sup 17/ cm-/sup 3/, respectively, were achieved with Be-doped films. P-type films with hole concentrations as high as a few times 10/sup 18/cm-/sup 3/ were achieved with increased doping. Be-doped InP was deposited onto the RXCdS/ITO/GLASS substrate to form a thin-film cell. However, p-type InP could not be prepared with CdS as a substrat4e, presumably due to interdiffusion or vapor transport of sulfur. Consequently, blocking action and a photovoltage could only be achieved using a gold Schottky barrier on the InP/RXCdS/ITO/GLASS structure. Plans for the next quarter include determining whether n-type doping from the CdS occurs by either interdiffusion or vapor transport, characterizing InP epitaxy on the RXCdS, and preparing additional thin-film structures.

  12. Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

    1990-01-01

    The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

  13. Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

    1993-01-01

    Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

  14. Diphacinone and zinc phosphide toxicity in a flock of Peafowl.

    PubMed

    Shivaprasad, H L; Galey, F

    2001-12-01

    Toxicity probably due to a combination of diphacinone and zinc phosphide was diagnosed in a flock of peafowl, in which 35 birds in a flock of 80 died over a span of 10 days without any apparent clinical signs. Chickens and guinea fowl, 30 each on the same premises, were not affected. Plastic tubes containing diphacinone and zinc phosphide were used on the premises to control ground squirrels. Most of the six dead peafowl, which ranged in age from 6 months to 4 years, had an accumulation of serosanguinous fluid in the abdominal cavity, semi-clotted blood over the liver lobes, increased pericardial fluid, and enlarged and pale kidneys. Pellets of diphacinone and zinc phosphide were found in the crop and gizzard contents from most of the birds. Microscopically, most of the birds had mild to moderate centrolobular degeneration of hepatocytes and multifocal degeneration of myofibres in the heart with infiltration by a few mononuclear cells. Acute nephrosis and mucosal oedema in the oesophagus and crop were also observed. Toxicological analysis of the crop and gizzard contents revealed the presence of diphacinone and phosphine gas, and analysis of the crop contents from two birds for heavy metals revealed zinc levels of up to 6600 parts/10 6 . It was suspected that only the peafowl and not the chickens and guinea fowl were affected because peafowl, with their longer necks, were able to reach into the plastic tubes and eat the pellets. PMID:19184953

  15. A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

    SciTech Connect

    Wagner, Hannes; Ohrdes, Tobias; Dastgheib-Shirazi, Amir; Puthen-Veettil, Binesh; König, Dirk; Altermatt, Pietro P.

    2014-01-28

    The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

  16. Potential health and safety hazards associated with the production of cadmium telluride, copper indium diselenide, and zinc phosphide photovoltaic cells

    SciTech Connect

    Moskowitz, P.D.; Fthenakis, V.M.; Lee, J.C.

    1985-04-01

    In large-scale manufacture of cadmium telluride, copper indium diselenide, and zinc phosphide photovoltaic cells, the materials and equipment used may present potential health and safety hazards to workers and the public. These hazards were identified by reviewing data on process materials, availability of control technology, biomedical effects, and health and environmental standards. Quantitative estimates of material inputs and outputs, and control technology costs for selected processes were based on preliminary engineering designs for hypothetical 10-MWp/yr photovoltaic cell production facilities. In the fabrication of these devices, unusually large quantities of some toxic gases may be used; large demands for phosphine and hydrogen selenide are of special concern. Because projected usage of these materials is much larger than the current one, a thorough evaluation of engineering controls will be needed before the technologies are commercialized. These materials could also present occupational health hazards. Some management options to reduce occupational exposures to these materials are presented. Although specific federal and state regulations have not been promulgated for emissions from the photovoltaic industry, prudent engineering practice should be applied to all waste streams - solid, atmospheric, or liquid - containing toxic pollutants to limit discharges of these materials. Control costs for most atmospheric waste streams should not be large (<0.01 cent per watt); for phosphine, however, costs are potentially much larger (4.4 cents per watt). Some processes may also produce large quantities of solid waste defined as toxic or hazardous under US Environmental Protection Agency guidelines. Disposal costs for these materials are presented.

  17. Solution-based synthesis and purification of zinc tin phosphide nanowires

    NASA Astrophysics Data System (ADS)

    Sheets, Erik J.; Balow, Robert B.; Yang, Wei-Chang; Stach, Eric A.; Agrawal, Rakesh

    2015-11-01

    The solution-based synthesis of nanoscale earth-abundant semiconductors has the potential to unlock simple, scalable, and tunable material processes which currently constrain development of novel compounds for alternative energy devices. One such promising semiconductor is zinc tin phosphide (ZnSnP2). We report the synthesis of ZnSnP2 nanowires via a solution-liquid-solid mechanism utilizing metallic zinc and tin in decomposing trioctylphosphine (TOP). Dried films of the reaction product are purified of binary phosphide phases by annealing at 345 °C. Tin is removed using a 0.1 M nitric acid treatment leaving pure ZnSnP2 nanowires. Diffuse reflectance spectroscopy indicates ZnSnP2 has a direct bandgap energy of 1.24 eV which is optimal for solar cell applications. Using a photoelectrochemical cell, we demonstrate cathodic photocurrent generation at open circuit conditions from the ZnSnP2 nanowires upon solar simulated illumination confirming p-type conductivity.The solution-based synthesis of nanoscale earth-abundant semiconductors has the potential to unlock simple, scalable, and tunable material processes which currently constrain development of novel compounds for alternative energy devices. One such promising semiconductor is zinc tin phosphide (ZnSnP2). We report the synthesis of ZnSnP2 nanowires via a solution-liquid-solid mechanism utilizing metallic zinc and tin in decomposing trioctylphosphine (TOP). Dried films of the reaction product are purified of binary phosphide phases by annealing at 345 °C. Tin is removed using a 0.1 M nitric acid treatment leaving pure ZnSnP2 nanowires. Diffuse reflectance spectroscopy indicates ZnSnP2 has a direct bandgap energy of 1.24 eV which is optimal for solar cell applications. Using a photoelectrochemical cell, we demonstrate cathodic photocurrent generation at open circuit conditions from the ZnSnP2 nanowires upon solar simulated illumination confirming p-type conductivity. Electronic supplementary information (ESI

  18. Simulation of high-efficiency n[sup +]p indium phosphide solar cell results and future improvements

    SciTech Connect

    Jain, R.K.; Flood, D.J. )

    1994-12-01

    A simulation of the highest efficiency (19.1% AM0) n[sup +]p indium phosphide (InP) solar cell was made using a computer code PC-1D in order to understand it and suggest future improvements to it. Available cell design and process data was used in the simulation. Minority carrier diffusion lengths in the emitter and base have been varied to match the experimental cell I-V characteristics with the calculated results. To further understand and improve the InP cell efficiency, simulations were performed using improved values of cell material and process parameters. The authors show that the efficiency of this cell could be increased to more than 23% AM0 by incorporating the suggested cell material, design and process improvements. At these high efficiencies InP cell technology will be very attractive for space use.

  19. Successful management of zinc phosphide poisoning

    PubMed Central

    Shakoori, Vahid; Agahi, Mahsa; Vasheghani-Farahani, Maryam; Marashi, Sayed Mahdi

    2016-01-01

    Zinc phosphide (Zn2P3) rodenticide, is generally misused intentionally for suicidal purpose in Iran. For many years, scientists believe that liberation of phosphine (PH3) on contact with acidic content of the stomach is responsible for clinical presentations. However, relatively long time interval between ingestion of Zn2P3 and presentation of its systemic toxicity, and progression of acute liver failure could not be explained by the current opinion. Hence, an innovative theory intended that phosphonium, as an intermediate product will create and pass through the stomach, which then will reduce to produce PH3in the luminal tract. Here, we present a case of massive Zn2P3 poisoning. In our case, we used repeated doses of castor oil to induce bowel movement with an aim of removing unabsorbed toxin, which was proved by radiography. Interestingly, the patient presents only mild symptoms of toxicity such as transient metabolic acidosis and hepatic dysfunction. PMID:27390464

  20. Successful management of zinc phosphide poisoning.

    PubMed

    Shakoori, Vahid; Agahi, Mahsa; Vasheghani-Farahani, Maryam; Marashi, Sayed Mahdi

    2016-06-01

    Zinc phosphide (Zn2P3) rodenticide, is generally misused intentionally for suicidal purpose in Iran. For many years, scientists believe that liberation of phosphine (PH3) on contact with acidic content of the stomach is responsible for clinical presentations. However, relatively long time interval between ingestion of Zn2P3 and presentation of its systemic toxicity, and progression of acute liver failure could not be explained by the current opinion. Hence, an innovative theory intended that phosphonium, as an intermediate product will create and pass through the stomach, which then will reduce to produce PH3in the luminal tract. Here, we present a case of massive Zn2P3 poisoning. In our case, we used repeated doses of castor oil to induce bowel movement with an aim of removing unabsorbed toxin, which was proved by radiography. Interestingly, the patient presents only mild symptoms of toxicity such as transient metabolic acidosis and hepatic dysfunction. PMID:27390464

  1. Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

  2. Lattice-mismatched In(0. 40)Al(0. 60)As window layers for indium phosphide solar cells

    SciTech Connect

    Jain, R.K.; Landis, G.A.; Wilt, D.M.; Flood, D.J.

    1993-11-01

    The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar cells with wide-bandgap (1.8 eV) lattice-mismatched In(0.40)Al(0.60)As as a window layer was calculated. Because the required window layer thickness is less than the critical layer thickness, growth of strained (pseudomorphic) layers without interfacial misfit dislocations should be possible. Calculations using the PC-lD numerical code showed that the efficiencies of baseline and optimized p(+)n (p-on-n) cells are increased to more than 22 and 24 percent, (air mass zero (AMO), 25 C), respectively for a lattice-mismatched In(0.40)Al(0.60)As window layer of 10-nm thickness. Currently, most cell development work has been focused on n(+)p (n-on-p) structures although comparatively little improvement has been found for n(+)p cells.

  3. Lattice-mismatched In(0.40)Al(0.60)As window layers for indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.; Wilt, David M.; Flood, Dennis J.

    1993-01-01

    The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar cells with wide-bandgap (1.8 eV) lattice-mismatched In(0.40)Al(0.60)As as a window layer was calculated. Because the required window layer thickness is less than the critical layer thickness, growth of strained (pseudomorphic) layers without interfacial misfit dislocations should be possible. Calculations using the PC-lD numerical code showed that the efficiencies of baseline and optimized p(+)n (p-on-n) cells are increased to more than 22 and 24 percent, (air mass zero (AMO), 25 C), respectively for a lattice-mismatched In(0.40)Al(0.60)As window layer of 10-nm thickness. Currently, most cell development work has been focused on n(+)p (n-on-p) structures although comparatively little improvement has been found for n(+)p cells.

  4. Indium phosphide solar cell research in the United States: Comparison with non-photovoltaic sources

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1989-01-01

    Highlights of the InP solar cell research program are presented. Homojunction cells with efficiencies approaching 19 percent are demonstrated, while 17 percent is achieved for ITO/InP cells. The superior radiation resistance of the two latter cell configurations over both Si and GaAs cells has been shown. InP cells aboard the LIPS3 satellite show no degradation after more than a year in orbit. Computed array specific powers are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

  5. Influence of the Dislocation Density on the Performance of Heteroepitaxial Indium Phosphide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.

    1991-01-01

    Calculations are made to study the dependence of heteroepitaxial InP solar-cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness are considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20 percent AM0 efficiency could be fabricated if dislocations are reduced to less than 100,000/sq cm.

  6. Theoretical modeling, near-optimum design and predicted performance of n(+)pp(+) and p(+)nn(+) indium phosphide homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Goradia, Chandra; Thesling, William; Weinberg, Irving

    1991-01-01

    Using a detailed simulation model of p(+)nn(+) and n(+)pp(+) indium phosphide (InP) homojunction solar cells, extensive parametric variation computer simulation runs are conducted to help arrive at near-optimum designs of these two solar cell configurations. Values of all the geometrical and material parameters corresponding to the near-optimal designs of both these configurations are presented. For each configuration, results are given for parametric variation runs showing how the performance parameters JSC, VOC, and eta vary with each of the cell parameters for the near-optimally designed cell.

  7. Three-dimensional numerical modeling of indium phosphide Point-Contact Solar Cells

    NASA Technical Reports Server (NTRS)

    Clark, Ralph O.

    1992-01-01

    The Point-Contact Solar Cell (PCSC) geometry has proven very effective for silicon cells. To date, it has not been implemented in III-V materials. In addition, modeling such a geometry is very difficult because of its three-dimensional nature. We have developed a three-dimensional finite element modeling code (FIESTA ROC). In this paper, we present results from a three-dimensional modeling study of InP point-contact solar cells.

  8. Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1989-01-01

    Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

  9. Naval Research Laboratory's programs in advanced indium phosphide solar cell development

    NASA Technical Reports Server (NTRS)

    Summers, Geoffrey P.

    1996-01-01

    The Naval Research Laboratory (NRL) has been involved in the development of solar cells for space applications since the 1960s. It quickly became apparent in this work that radiation damage caused to solar cells by electrons and protons trapped by the earth's magnetic field would seriously degrade the power output of photovoltaic arrays in extended missions. Techniques were therefore developed to harden the cells by shielding them with coverglass, etc. Ultimately, however, there is a limit to such approaches, which is determined by the radiation response of the semiconductor material employed. A desire for high efficiency and radiation resistance led to the development of alternative cell technologies such as GaAs, which has since become the technology of choice for many applications. InP cells are currently the most radiation resistant, high efficiency, planar cells known. NRL first sponsored InP solar cell technology in 1986, when Arizona State University was contracted to grow p/n cells by liquid phase epitaxy. NRL's interest in InP cells was generated by the results presented by Yamaguchi and his co-workers in the early 1980s on the remarkable radiation resistance of cells grown by diffusion of S into Zn doped p-type InP substrates. These cells also had beginning of life (BOL) efficiencies approximately 16%(AM0). Related to the radiation resistance of the cells was the fact that radiation-induced damage could be optically annealed by sunlight. Relatively large quantities of 1 x 2 cm(exp 2) diffused junction cells were made and were used on the MUSES-A and the EXOS-D satellites. These cells were also available in the U.S. through NIMCO, and were studied at NRL and elsewhere. Workers at NASA Lewis became involved in research in InP cells about the same time as NRL.

  10. Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Goradia, Chandra; Thesling, William; Weinberg, Irving

    1990-01-01

    Solar cells made from gallium arsenide (Gaas), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub oc) of 1.05 V at 1 AM0, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured V sub oc of approximately 950 mV at 1 AM0, 300 K. However, to date, the best measured V sub oc for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AM0, 25 C. The V sub oc of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V sub oc, and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V sub oc of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

  11. Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Goradia, Chandra; Thesling, William; Weinberg, Irving

    1991-01-01

    Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

  12. Effect of zinc impurity on silicon solar-cell efficiency

    NASA Technical Reports Server (NTRS)

    Sah, C.-T.; Chan, P. C. H.; Wang, C.-K.; Yamakawa, K. A.; Lutwack, R.; Sah, R. L.-Y.

    1981-01-01

    Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.

  13. Naval Research Laboratory's programs in advanced indium phosphide solar cell development

    NASA Astrophysics Data System (ADS)

    Summers, Geoffrey P.

    1995-10-01

    The Naval Research Laboratory has been involved in developing InP solar cell technology since 1988. The purpose of these programs was to produce advanced cells for use in very high radiation environments, either as a result of operating satellites in the Van Allen belts or for very long duration missions in other orbits. Richard Statler was technical representative on the first program, with Spire Corporation as the contractor, which eventually produced several hundred, high efficiency 2 x 2 sq cm single crystal InP cells. The shallow homojunction technology which was developed in this program enabled cells to be made with AMO, one sun efficiencies greater than 19%. Many of these cells have been flown on space experiments, including PASP Plus, which have confirmed the high radiation resistance of InP cells. NRL has also published widely on the radiation response of these cells and also on radiation-induced defect levels detected by DLTS, especially the work of Rob Walters and Scott Messenger. In 1990 NRL began another Navy-sponsored program with Tim Coutts and Mark Wanlass at the National Renewable Energy Laboratory (NREL), to develop a one sun, two terminal space version of the InP-InGaAs tandem junction cell being investigated at NREL for terrestrial applications. These cells were grown on InP substrates. Several cells with AM0, one sun efficiencies greater than 22% were produced. Two 2 x 2 sq cm cells were incorporated on the STRV lA/B solar cell experiment. These were the only two junction, tandem cells on the STRV experiment. The high cost and relative brittleness of InP wafers meant that if InP cell technology were to become a viable space power source, the superior radiation resistance of InP would have to be combined with a cheaper and more robust substrate. The main technical challenge was to overcome the effect of the dislocations produced by the lattice mismatch at the interface of the two materials. Over the last few years, NRL and Steve Wojtczuk at

  14. Naval Research Laboratory's programs in advanced indium phosphide solar cell development

    NASA Technical Reports Server (NTRS)

    Summers, Geoffrey P.

    1995-01-01

    The Naval Research Laboratory has been involved in developing InP solar cell technology since 1988. The purpose of these programs was to produce advanced cells for use in very high radiation environments, either as a result of operating satellites in the Van Allen belts or for very long duration missions in other orbits. Richard Statler was technical representative on the first program, with Spire Corporation as the contractor, which eventually produced several hundred, high efficiency 2 x 2 sq cm single crystal InP cells. The shallow homojunction technology which was developed in this program enabled cells to be made with AMO, one sun efficiencies greater than 19%. Many of these cells have been flown on space experiments, including PASP Plus, which have confirmed the high radiation resistance of InP cells. NRL has also published widely on the radiation response of these cells and also on radiation-induced defect levels detected by DLTS, especially the work of Rob Walters and Scott Messenger. In 1990 NRL began another Navy-sponsored program with Tim Coutts and Mark Wanlass at the National Renewable Energy Laboratory (NREL), to develop a one sun, two terminal space version of the InP-InGaAs tandem junction cell being investigated at NREL for terrestrial applications. These cells were grown on InP substrates. Several cells with AM0, one sun efficiencies greater than 22% were produced. Two 2 x 2 sq cm cells were incorporated on the STRV lA/B solar cell experiment. These were the only two junction, tandem cells on the STRV experiment. The high cost and relative brittleness of InP wafers meant that if InP cell technology were to become a viable space power source, the superior radiation resistance of InP would have to be combined with a cheaper and more robust substrate. The main technical challenge was to overcome the effect of the dislocations produced by the lattice mismatch at the interface of the two materials. Over the last few years, NRL and Steve Wojtczuk at

  15. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5 G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  16. A theoretical comparison of the near-optimum design and predicted performance of n/p and p/n indium phosphide homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Goradia, Chandra; Thesling, William; Weinberg, Irving

    1991-01-01

    Using a detailed simulation model of p(+)nn(+) and n(+)pp(+) indium phosphide (InP) homojunction solar cells, extensive parametric variation computer simulation runs were performed to aid in making near-optimum designs for these two solar cell configurations. The values of all the geometrical and material parameters corresponding to the near-optimal designs of both these configurations are presented. The results of parametric variation runs are presented for each configuration showing how the performance parameters J(sub sc), V(sub oc), and eta vary with each of the cell design parameters for the near-optimally designed cell. Finally, the theoretically obtained results are discussed, and the relative merits and drawbacks of the two configurations are compared.

  17. Indium phosphide/cadmium sulfide thin-film solar cells. Quarterly report, July-October 1980

    SciTech Connect

    Zanio, K.

    1981-01-01

    InP thin films were deposited by planar reactive deposition on recrystallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. One objective of this period was to grow InP on RXCdS at a substrate temperature which is high enough to permit the growth of p-type material but yet low enough to permit the epitaxial growth of large grains. Films prepared on RXCdS at approximately 330/sup 0/C contained a mixture of grains having both large and submicron lateral dimensions. Be-doped epitaxial films, deposited on semi-insulating InP at 330/sup 0/C, showed both n- and p-type behavior. Films prepared at higher temperatures with a freshly Be-charged indium source were p-type. However, at these temperatures, layers prepared after several runs with the same source were n-type. Analyses of the indium source and films were initiated to determine the cause of the transient doping.

  18. Indium phosphide/cadmium sulfide thin-film solar cells. Semiannual report, July 1980-December 1980

    SciTech Connect

    Zanio, K.

    1981-03-01

    InP thin films were deposited by planar reactive deposition on recyrstallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. Films prepared on RXCdS at approximately 330/sup 0/C contained a mixture of grains having both large and submicron lateral dimensions. SIMS analysis showed the interdiffusion profiles to be well behaved and, within the resolution of the analysis, no significant difference in the profiles between structures prepared at 330/sup 0/C and 380/sup 0/C. Be-doped epitaxial films, deposited on semi-insulating InP at 330/sup 0/C, showed both n- and p-type behavior. Films prepared at higher and lower temperatures with a freshly Be-charged In source were p-type and n-type, respectively; the n-type behavior is associated with an excess of n-type native defects. SIMS analyses confirmed the presence of Be in all Be-doped films. Growth with deviation from stoichiometry was initiated at 330/sup 0/C to reduce the concentration of native defects. Growth of Be-doped films at higher substrate temperature with the same Be-doped source after several runs eventually resulted in n-type films. Analyses of the In source and films were initiated to determine the cause of the transient doping. As an alternative to Be doping, p-type Zn-doped InP films were prepared on InP semi-insulating substrates with room-temperature carrier concentration and mobilities of 6 x 10/sup 16/ cm/sup -3/, and 80 cm/sup 2//Vsec, respectively.

  19. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  20. Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

    1987-01-01

    The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

  1. Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

    1987-01-01

    The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

  2. 1-Dimensional Zinc Oxide Nanomaterial Growth and Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Choi, Hyung Woo

    Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. Furthermore, ZnO is a potential material for transparent conducting oxide material competing with indium tin oxide (ITO), graphene, and carbon nanotube film. It has been known as a conductive material when doped with elements such as indium, gallium and aluminum. The solubility of those dopant elements in ZnO is still debatable; but, it is necessary to find alternative conducting materials when their form is film or nanostructure for display devices. This is a consequence of the ever increasing price of indium. In addition, a new generation solar cell (nanostructured or hybrid photovoltaics) requires compatible materials which are capable of free standing on substrates without seed or buffer layers and have the ability introduce electrons or holes pathway without blocking towards electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order to overcome the limitation of efficiency for organic solar cells. This dissertation is a study of the rational solution-based synthesis of 1-dimentional ZnO nanomaterial and its solar cell applications. These results have implications in cost effective and uniform nanomanufacturing for the next generation solar cells application by controlling growth condition and by doping transition metal element in solution.

  3. Power recovery of radiation damaged MOCVD grown indium phosphide on silicon solar cells through argon-ion laser annealing. Master`s thesis

    SciTech Connect

    Boyer, L.L.

    1996-06-01

    This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells.

  4. Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

    SciTech Connect

    Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

    2014-06-09

    We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

  5. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  6. Gap/silicon Tandem Solar Cell with Extended Temperature Range

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A. (Inventor)

    2006-01-01

    A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

  7. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  8. Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures

    NASA Technical Reports Server (NTRS)

    Goradia, Chandra; Thesling, William; Goradia, Manju Ghalla; Weinberg, Irving; Swartz, Clifford K.

    1988-01-01

    The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n+pp+ InP solar cells on incident intensities up to 200 AM0 and temperatures up to 100 deg C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 deg C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 deg C. With efficiencies near 22 percent at 80 deg C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.

  9. A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1991-01-01

    An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

  10. A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1991-01-01

    An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3 which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

  11. Low-Resistivity Zinc Selenide for Heterojunctions

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1986-01-01

    Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

  12. Hepatotoxicity due to zinc phosphide poisoning in two patients: role of N-acetylcysteine.

    PubMed

    Oghabian, Zohreh; Afshar, Arefeh; Rahimi, Hamid Reza

    2016-08-01

    Zinc phosphide (Zn3P2/ZnP) is used as a rodenticide. The most common signs of toxicity are nausea, vomiting, hypotension, and metabolic acidosis; patients presenting such signs are referred to the emergency department (ED) of the hospitals. Therefore, this study aimed to report two cases of hepatotoxicity following accidental and intentional ZnP poisoning and successful management with N-acetylcysteine (NAC). PMID:27525081

  13. Efficient inverted polymer solar cells based on conjugated polyelectrolyte and zinc oxide modified ITO electrode

    SciTech Connect

    Yuan, Tao; Zhu, Xiaoguang; Tu, Guoli; Zhou, Lingyu; Zhang, Jian

    2015-02-23

    Efficient inverted polymer solar cells (PSCs) were constructed by utilizing a conjugated polyelectrolyte PF{sub EO}SO{sub 3}Na and zinc oxide to modify the indium tin oxide (ITO) electrode. The ITO electrode modified by PF{sub EO}SO{sub 3}Na and zinc oxide possesses high transparency, increased electron mobility, smoothened surface, and lower work function. PTB7:PC{sub 71}BM inverted PSCs containing the modified ITO electrode achieved a high power conversion efficiency (PCE) of 8.49%, exceeding that of the control device containing a ZnO modified ITO electrode (7.48%). Especially, PCE-10:PC{sub 71}BM inverted polymer solar cells achieved a high PCE up to 9.4%. These results demonstrate a useful approach to improve the performance of inverted polymer solar cells.

  14. Indium phosphide/cadmium sulfide thin-film solar cells. Final report, May 1979 through July 1980

    SciTech Connect

    Zanio, K.

    1980-09-01

    Thin-film InP/RXCdS/ITO/GLASS devices were prepared by depositing ITO on low-cost glass substrate, depositing CdS on the ITO by thermal evaporation, increasing the CdS lateral grain size by recrystallization, and depositing p-type InP by planar reactive deposition (PRD) on the recrystallized CdS (RXCdS). Yields of the RXCdS/ITO/GLASS substrates were increased to 90% with lateral dimensions of the RXCdS grains as large as 0.3 mm. P-type InP layers were obtained with Be doping. S-doping via vapor transport from the CdS was eliminated by capping the entire RXCdS substrate with InP. For InP deposited on RXCdS at 380/sup 0/C, devices showed blocking action with a barrier height of about 0.5 V but no light response, possibly due to an intermediate approx. 3-..mu..m-thick n-InP layer from diffusion of S from the RXCdS. These results were achieved despite poor InP epitaxy due to an approx. 0.5-..mu..m-thick In-Cd-S transition layer between the InP and the RXCdS. InP films were subsequently deposited on RXCdS at the reduced substrate temperature of 280/sup 0/C to reduce S-diffusion and improve the quality of the epitaxy. Complete InP epitaxy on RXCdS was achieved with the lateral dimensions of the InP (approx. = 40 ..mu..m) replicating that of the RXCdS. Given the increase in the concentration of n-type native defects as substrate temperature is decreased, the present lower limit for obtaining p-type InP by vacuum technologies appears to be about 300/sup 0/C. A 300 to 350/sup 0/C range of substrate temperature appears to befeasible for preparing large-grained p-type InP for both frontwall and backwall cell. However, if the thickness of the n-type layer due to S diffusion cannot be kept to less than a few thousand Angstroms, then development must be restricted to the frontwall cells.

  15. Asymmetric Zinc Phthalocyanines as Dye-Sensitized Solar Cells

    NASA Astrophysics Data System (ADS)

    Tunc, Gulenay; Yavuz, Yunus; Gurek, Aysegul; Canimkurbey, Betul; Kosemen, Arif; San, Sait Eren; Ahsen, Vefa

    Dye-sensitized solar cells (DSSCs) have received increasing attention due to their high incident to photon efficiency, easy fabrication and low production cost . Tremendous research efforts have been devoted to the development of new and efficient sensitizers suitable for practical use. In TiO2-based DSSCs, efficiencies of up to 11.4% under simulated sunlight have been obtained with rutheniumepolypyridyl complexes. However, the main drawback of ruthenium complexes is the lack of absorption in the red region of the visible light and the high cost. For this reason, dyes with large and stable p-conjugated systems such as porphyrins and phthalocyanines are important classes of potential sensitizers for highly efficient DSSCs. Phthalocyanines (Pcs) have been widely used as sensitizers because of their improved light-harvesting properties in the far red- and near-IR spectral regions and their extraordinary robustness [1]. In this work, a series of asymmetric Zn(II) Pcs bearing a carboxylic acid group and six hexylthia groups either at the peripheral or non-peripheral positions have been designed and synthesized to investigate the influence of the COOH group and the positions of hexylthia groups on the dye-sensitized solar cell (DSSC) performance.

  16. Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells.

    PubMed

    Dai, Pengcheng; Zhang, Guan; Chen, Yuncheng; Jiang, Hechun; Feng, Zhenyu; Lin, Zhaojun; Zhan, Jinhua

    2012-03-21

    Porous copper zinc tin sulfide (CZTS) thin film was prepared via a solvothermal approach. Compared with conventional dye-sensitized solar cells (DSSCs), double junction photoelectrochemical cells using dye-sensitized n-type TiO(2) (DS-TiO(2)) as the photoanode and porous p-type CZTS film as the photocathode shows an increased short circuit current, external quantum efficiency and power conversion efficiency. PMID:22322239

  17. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes.

    PubMed

    Zhou, Nanjia; Buchholz, Donald B; Zhu, Guang; Yu, Xinge; Lin, Hui; Facchetti, Antonio; Marks, Tobin J; Chang, Robert P H

    2014-02-01

    Polymer solar cells are fabricated on highly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes. For two representative active layer donor polymers, P3HT and PTB7, the power conversion efficiencies (PCEs) are comparable to reference devices using polycrystalline indium tin oxide (ITO) electrodes. Benefitting from the amorphous character of a-ZITO, the new devices are highly flexible and can be repeatedly bent to a radius of 5 mm without significant PCE reduction. PMID:24123578

  18. Evaluation of Potential Oxidative Stress in Egyptian Patients with Acute Zinc Phosphide Poisoning and the Role of Vitamin C

    PubMed Central

    Sagah, Ghada A.; Oreby, Merfat M.; El-Gharbawy, Rehab M.; Ahmed Fathy, Amal S.

    2015-01-01

    Objective To evaluate potential oxidative stress in patients with acute phosphide poisoning and the effect of vitamin C. Methods Participants were females and divided into three groups; group I: healthy volunteers group II: healthy volunteers received vitamin C, group III: patients with acute phosphide poisoning received the supportive and symptomatic treatment and group IV: patients with acute phosphide poisoning received the supportive and symptomatic treatment in addition to vitamin C. All the participants were subjected to thorough history, clinical examination, ECG and laboratory investigations were carried on collected blood and gastric lavage samples on admission. Blood samples were divided into two parts, one for measurement of routine investigations and the second part was used for evaluation of malondialdehyde and total thiol levels before and after receiving the treatment regimen. Results Most of the cases in this study were among the age group of 15–25 years, females, single, secondary school education, from rural areas and suicidal. All vital signs were within normal range and the most common complaint was vomiting and abdominal pain. All cases in this study showed normal routine investigations. The mean MDA levels after receiving treatment decreased significantly in groups II and IV. The mean total thiol levels increased significantly after receiving treatment in groups II and IV. Conclusion It can be concluded that vitamin C has a potential benefit due to its antioxidant property on zinc phosphide induced-oxidative stress in acute zinc phosphide poisoned patients. PMID:26715917

  19. Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

    PubMed

    Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

    2015-06-21

    A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV). PMID:26000570

  20. Improvement of device performance by using zinc oxide in hybrid organic-inorganic solar cells

    NASA Astrophysics Data System (ADS)

    Hayakawa, Akinobu; Sagawa, Takashi

    2016-02-01

    Zinc oxide (ZnO) nanopowder was applied to hybrid solar cells in combination with poly(3-hexylthiophene). Stability tests of the hybrid solar cell with or without encapsulation with glass and UV cut-off films were performed under 1 sun at 63 °C at a relative humidity of 50%. It was found that the sealed cell showed worse device performance in terms of the loss of the open-circuit voltage (Voc), whereas the unsealed cell exposed to air retained an almost constant Voc for more than 3 d under dark and atmospheric conditions. Placement in O2 atmosphere in the dark led to the recovery of Voc. Cation (Sn4+) doping into ZnO was performed, and the loss of Voc was effectively suppressed through the restraint of the supply of the excited electron from the valence band to the conduction band.

  1. Indium Zinc Oxide Mediated Wafer Bonding for III-V/Si Tandem Solar Cells

    SciTech Connect

    Tamboli, Adele C.; Essig, Stephanie; Horowitz, Kelsey A. W.; Woodhouse, Michael; van Hest, Maikel F. A. M.; Norman, Andrew G.; Steiner, Myles A.; Stradins, Paul

    2015-06-14

    Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We investigate the impact of a heavily doped III-V contact layer on the electrical and optical properties of bonded test samples, including the predicted impact on tandem cell performance. We present economic modeling which indicates that the path to commercial viability for bonded cells includes developing low-cost III-V growth and reducing constraints on material smoothness. If these challenges can be surmounted, bonded tandems on Si can be cost-competitive with incumbent PV technologies, especially in low concentration, single axis tracking systems.

  2. Organic solar cells on indium tin oxide and aluminum doped zinc oxide anodes

    NASA Astrophysics Data System (ADS)

    Schulze, Kerstin; Maennig, Bert; Leo, Karl; Tomita, Yuto; May, Christian; Hüpkes, Jürgen; Brier, Eduard; Reinold, Egon; Bäuerle, Peter

    2007-08-01

    The authors compare organic solar cells using two different transparent conductive oxides as anode: indium tin oxide (ITO) and three kinds of aluminum doped zinc oxide (ZAO). These anodes with different work functions are used for small molecule photovoltaic devices based on an oligothiophene derivative as donor and fullerene C60 as acceptor molecule. It turns out that cells on ITO and ZAO have virtually identical properties. In particular, the authors demonstrate that the work function of the anode does not influence the Voc of the photovoltaic device due to the use of doped transport layers.

  3. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization. PMID:25363298

  4. Low-cost zinc-plated photoanode for fabric-type dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Kong, Lingfeng; Bao, Yunna; Guo, Wanwan; Cheng, Li; Du, Jun; Liu, Renlong; Wang, Yundong; Fan, Xing; Tao, Changyuan

    2016-02-01

    Fabric-type flexible solar cells have been recently proposed as a very promising power source for wearable electronics. To increase the photocurrent of fabric-type flexible solar cells, low-cost zinc-plated wire and mesh photoanodes are assembled for the first time through a mild wet process. Given the protection of the compact protection layer, the DSSC device could benefit from the low work function of Zn and self-repairing behavior on the Zn/ZnO interface. An evident current increase by ∼6 mA/cm2 could be observed after coating a layer of metal Zn on various metal substrates, such as traditional stainless steel wire. Given the self-repairing behavior on Zn/ZnO interface, the Zn layer can help to improve the interfacial carrier transfer, leading to better photovoltaic performance, for both liquid-type and solid-type cells.

  5. Zinc chlorophyll aggregates as hole transporters for biocompatible, natural-photosynthesis-inspired solar cells

    NASA Astrophysics Data System (ADS)

    Li, Yue; Sasaki, Shin-ichi; Tamiaki, Hitoshi; Liu, Cheng-Liang; Song, Jiaxing; Tian, Wenjing; Zheng, Enqiang; Wei, Yingjin; Chen, Gang; Fu, Xueqi; Wang, Xiao-Feng

    2015-11-01

    The intriguing properties of extremely efficient delocalization and migration of excitons in chlorophyll (Chl) J-type aggregates have inspired intense research activities toward their structural understanding, functional interpretation and mimicry synthesis. Herein, we demonstrated the J-aggregates of zinc methyl 3-devinyl-3-hydroxymethyl-pyropheophorbide a (ZnChl-1) generated by spin-coating method for the application as a hole transporter in titania-based solar cells using methyl trans-32-carboxypyropheophorbide a (H2Chl-2) or its zinc complex (ZnChl-2) as the sensitizer. The effective carrier mobility of the J-aggregates films was determined by the organic field-effect transistor to be 6.2 × 10-4 cm2 V-1 s-1. Solar cells sharing the architecture of FTO/H2Chl-2 or ZnChl-2 on TiO2/(ZnChl-1)n/Ag were fabricated and the factors that presumably determine their photovoltaic performances were discussed. The photovoltaic devices studied herein employing inexpensive and pollution-free biomaterials provide a unique solution of utilizing solar energy with a care of the important environmental issue.

  6. Pulse-reverse electrodeposition of transparent nickel phosphide film with porous nanospheres as a cost-effective counter electrode for dye-sensitized solar cells.

    PubMed

    Wu, Mao-Sung; Wu, Jia-Fang

    2013-12-01

    A Ni2P nanolayer with porous nanospheres was directly coated on fluorine-doped tin oxide glass by pulse-reverse deposition as a low-cost counter electrode catalyst for dye-sensitized solar cells, and the photoelectron conversion efficiency of the cell was increased to 7.32% by using a porous nanosphere catalyst due to the significantly improved ion transport. PMID:24132176

  7. Fabrication and characterization of P3HT:PCBM-based thin film organic solar cells with zinc phthalocyanine

    NASA Astrophysics Data System (ADS)

    Maruhashi, Haruto; Oku, Takeo; Suzuki, Atsushi; Akiyama, Tsuyoshi; Yamasaki, Yasuhiro

    2015-02-01

    [6,6]-phenyl C61-butyric acid methyl ester and poly(3-hexylthiophene) bulk heterojunction solar cells added with zinc-tetra-tertiary-butyl-phthalocyanine (ZnPc) were fabricated and characterized. The photovoltaic properties of the solar cells with an inverted structure were improved by the ZnPc addition, which were investigated on the bases of current density-voltage characteristics, incident photon to current conversion efficiency.

  8. Growth of Zinc Phosphide (Zn3P2) and Iron Disulfide (FeS2) using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vaddi, Rajesh

    The growing energy needs of society have triggered tremendous interest in the development of photovoltaics formed from earth abundant materials. Zinc Phosphide (Zn3P2) and Iron Pyrite (FeS2) are two materials formed from elements with large Earth crustal abundances that have nearly ideal band gap energies (1.5eV and 0.96 eV, respectively) and optical absorption coefficients (~104 /cm) for use as absorber layers in solar cells. In this work, the structural, optical, and electronic properties of these materials produced in thin film form using pulsed laser deposition have been explored. Stoichiometric Zn3P2 thin films were obtained at a laser energy density of 3 J/cm2. However, these films were found to be amorphous. Crystallization of these highly resistive amorphous thin films was possible after rapid thermal annealing (RTA). A near optimal band gap of 1.6 eV and a high absorption coefficient of >104/cm were observed for samples annealed at 500 C for 60 seconds when high ramp rates of 150 °C/sec were used for annealing. XPS studies showed the presence of a trace amount of oxygen in the samples upon depth profiling. Schottky barrier heights were extracted for samples annealed at 350 °C and 500 °C with different metals. Al and Mg showed higher barrier heights with good diode rectification behavior. Fermi level pinning was shown to be a significant concern in both cases due to the large values of interface states observed (> 1013/cm2-eV). A Schottky barrier solar cell was fabricated using these films and showed low efficiency with a low Voc of 410 mV that was impacted by Fermi level pinning. Growth of Iron pyrite thin films from an FeS target was demonstrated for the first time using pulsed laser deposition. For the different laser energy densities and substrate temperatures explored, amorphous FeS (Pyrrhotite) was mainly produced. Conversion of FeS to FeS2 was obtained by sulfurization of thin films at 350 °C for times of 30 minutes at a N2 flow rates of 200

  9. Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

    NASA Technical Reports Server (NTRS)

    Moulot, Jacques; Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Bailey, Sheila

    1995-01-01

    It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or

  10. Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

    NASA Technical Reports Server (NTRS)

    Moulot, Jacques; Faur, M.; Faur, M.; Goradia, C.; Goradia, M.; Bailey, S.

    1995-01-01

    It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third

  11. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material. PMID:26960451

  12. Hybrid zinc oxide/graphene electrodes for depleted heterojunction colloidal quantum-dot solar cells.

    PubMed

    Tavakoli, Mohammad Mahdi; Aashuri, Hossein; Simchi, Abdolreza; Fan, Zhiyong

    2015-10-01

    Recently, hybrid nanocomposites consisting of graphene/nanomaterial heterostructures have emerged as promising candidates for the fabrication of optoelectronic devices. In this work, we have employed a facile and in situ solution-based process to prepare zinc oxide/graphene quantum dots (ZnO/G QDs) in a hybrid structure. The prepared hybrid dots are composed of a ZnO core, with an average size of 5 nm, warped with graphene nanosheets. Spectroscopic studies show that the graphene shell quenches the photoluminescence intensity of the ZnO nanocrystals by about 72%, primarily due to charge transfer reactions and static quenching. A red shift in the absorption peak is also observed. Raman spectroscopy determines G-band splitting of the graphene shell into two separated sub-bands (G(+), G(-)) caused by the strain induced symmetry breaking. It is shown that the hybrid ZnO/G QDs can be used as a counter-electrode for heterojunction colloidal quantum-dot solar cells for efficient charge-carrier collection, as evidenced by the external quantum efficiency measurement. Under the solar simulated spectrum (AM 1.5G), we report enhanced power conversion efficiency (35%) with higher short current circuit (80%) for lead sulfide-based solar cells as compared to devices prepared by pristine ZnO nanocrystals. PMID:26339693

  13. Synthesis and Characterization of Zinc Oxide Nanosheets for Dye-Sensitized Solar Cells.

    PubMed

    Al-Heniti, S; Umar, Ahmad; Zaki, H M

    2015-12-01

    Zinc oxide (ZnO) nanosheets were synthesized by a simple and facile hydrothermal process and characterized in terms of their morphological, structural, compositional, optical and photovoltaic properties. The detailed characterization revealed that the synthesized ZnO material possess nanosheet morphologies which are grown in very high density, possessing well-crystallinity with wurtzite hexagonal phase and exhibiting good optical properties. Further, the synthesized ZnO nanosheets were used as photoanode material to fabricate efficient dye-sensitized solar cell (DSSC). The fabricated DSSC shows an overall light-to-electricity conversion efficiency of -1.57%, open-circuit voltage (V(OC)) of 0.552 V, short-circuit currents (J(SC)) of -7.2 mA/cm2 and fill factors (FF) of 0.40. PMID:26682439

  14. High pressure study of the zinc phosphide semiconductor compound in two different phases

    NASA Astrophysics Data System (ADS)

    Mokhtari, Ali

    2009-07-01

    Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

  15. Highly efficient copper-zinc-tin-selenide (CZTSe) solar cells by electrodeposition.

    PubMed

    Jeon, Jong-Ok; Lee, Kee Doo; Seul Oh, Lee; Seo, Se-Won; Lee, Doh-Kwon; Kim, Honggon; Jeong, Jeung-hyun; Ko, Min Jae; Kim, BongSoo; Son, Hae Jung; Kim, Jin Young

    2014-04-01

    Highly efficient copper-zinc-tin-selenide (Cu2ZnSnSe4 ; CZTSe) thin-film solar cells are prepared via the electrodepostion technique. A metallic alloy precursor (CZT) film with a Cu-poor, Zn-rich composition is directly deposited from a single aqueous bath under a constant current, and the precursor film is converted to CZTSe by annealing under a Se atmosphere at temperatures ranging from 400 °C to 600 °C. The crystallization of CZTSe starts at 400 °C and is completed at 500 °C, while crystal growth continues at higher temperatures. Owing to compromises between enhanced crystallinity and poor physical properties, CZTSe thin films annealed at 550 °C exhibit the best and most-stable device performances, reaching up to 8.0 % active efficiency; among the highest efficiencies for CZTSe thin-film solar cells prepared by electrodeposition. Further analysis of the electronic properties and a comparison with another state-of-the-art device prepared from a hydrazine-based solution, suggests that the conversion efficiency can be further improved by optimizing parameters such as film thickness, antireflection coating, MoSe2 formation, and p-n junction properties. PMID:24692285

  16. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Ferekides, Christos Savva

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C. The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. Their characteristics of the Cd(1-x)Zn(x)Te junctions degraded with increasing Zn concentration due to the crystalline quality and very small grain size (0.3 microns) in films with high ZnTe contents (greater than 25 percent). No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities

  17. InP (Indium Phosphide): Into the future

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.

    1989-01-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

  18. Semitransparent polymer-based solar cells with aluminum-doped zinc oxide electrodes.

    PubMed

    Wilken, Sebastian; Wilkens, Verena; Scheunemann, Dorothea; Nowak, Regina-Elisabeth; von Maydell, Karsten; Parisi, Jürgen; Borchert, Holger

    2015-01-14

    With the use of two transparent electrodes, organic polymer-fullerene solar cells are semitransparent and may be combined to parallel-connected multijunction devices or used for innovative applications like power-generating windows. A challenging issue is the optimization of the electrodes, to combine high transparency with adequate electric properties. In the present work, we study the potential of sputter-deposited aluminum-doped zinc oxide as an alternative to the widely used but relatively expensive indium tin oxide (ITO) as cathode material in semitransparent polymer-fullerene solar cells. Concerning the anode, we utilized an insulator-metal-insulator structure based on ultrathin Au films embedded between two evaporated MoO3 layers, with the outer MoO3 film (capping layer) serving as a light coupling layer. The performance of the ITO-free semitransparent polymer-fullerene solar cells was systematically studied as dependent on the thickness of the capping layer and the active layer as well as the illumination direction. These variations were found to have strong impact on the obtained photocurrent densities. We performed optical simulations of the electric field distribution within the devices using the transfer-matrix method, to analyze the origin of the current density variations in detail and provide deep insight into the device physics. With the conventional absorber materials studied here, optimized ITO-free and semitransparent devices reached 2.0% power conversion efficiency and a maximum optical transmission of 60%, with the device concept being potentially transferable to other absorber materials. PMID:25495167

  19. Photoelectrochemical cell having photoanode with thin boron phosphide coating as a corrosion resistant layer

    DOEpatents

    Baughman, Richard J.; Ginley, David S.

    1984-01-01

    A surface prone to corrosion in corrosive environments is rendered anticorrosive by CVD growing a thin continuous film, e.g., having no detectable pinholes, thereon, of boron phosphide. In one embodiment, the film is semiconductive. In another aspect, the invention is an improved photoanode, and/or photoelectrochemical cell with a photoanode having a thin film of boron phosphide thereon rendering it anitcorrosive, and providing it with unexpectedly improved photoresponsive properties.

  20. A comparative field trial, conducted without pre-treatment census baiting, of the rodenticides zinc phosphide, thallium sulphate and gophacide against Rattus norvegicus.

    PubMed Central

    Rennison, B. D.

    1976-01-01

    The effectiveness of the single-dose poison treatments of farm rat infestations, analysed by comparing the weights of the post-treatment census bait takes in covariance with the weights of the prebait takes, showed that treatments with 2-5% zinc phosphide, 0-3% thallium sulphate or 0-3% gophacide were equally effective and significantly better than were treatments with 1% zinc phosphide or 0-1% thallium sulphate. The methodology and sensitivity of different analyses are also considered. PMID:1068192

  1. Window structure for passivating solar cells based on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  2. Mixed metal oxides for dye-sensitized solar cell using zinc titanium layered double hydroxide as precursor

    NASA Astrophysics Data System (ADS)

    Liu, Jianqiang; Qin, Yaowei; Zhang, Liangji; Xiao, Hongdi; Song, Jianye; Liu, Dehe; Leng, Mingzhe; Hou, Wanguo; Du, Na

    2013-12-01

    Mixed metal oxides (MMO) are always obtained from layered double hydroxide (LDH) by thermal decomposition. In the present work, a zinc titanium LDH with the zinc titanium molar ratio of 4.25 was prepared by urea method and ZnO-based mixed oxides were obtained by calcining at or over 500°C. The MMO was used as electrodes for dye sensitized solar cell (DSSC). The cells constructed by films of prepared composite materials using a N719 as dye were prepared. The efficiency values of these cells are 0.691%, 0.572% and 0.302% with MMO prepared at 500, 600 and 700°C, respectively.

  3. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  4. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    PubMed

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. PMID:26050844

  5. Molybdenum Disulfide as a Protection Layer and Catalyst for Gallium Indium Phosphide Solar Water Splitting Photocathodes.

    PubMed

    Britto, Reuben J; Benck, Jesse D; Young, James L; Hahn, Christopher; Deutsch, Todd G; Jaramillo, Thomas F

    2016-06-01

    Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties for solar water splitting, but its surface stability is problematic as it undergoes significant chemical and electrochemical corrosion in aqueous electrolytes. Molybdenum disulfide (MoS2) nanomaterials are promising to both protect GaInP2 and to improve catalysis because MoS2 is resistant to corrosion and also possesses high activity for the hydrogen evolution reaction (HER). In this work, we demonstrate that GaInP2 photocathodes coated with thin MoS2 surface protecting layers exhibit excellent activity and stability for solar hydrogen production, with no loss in performance (photocurrent onset potential, fill factor, and light-limited current density) after 60 h of operation. This represents a 500-fold increase in stability compared to bare p-GaInP2 samples tested in identical conditions. PMID:27196435

  6. Fabrication and characterization of copper oxide-zinc oxide solar cells prepared by electrodeposition

    NASA Astrophysics Data System (ADS)

    Fujimoto, Kazuya; Oku, Takeo; Akiyama, Tsuyoshi; Suzuki, Atsushi

    2013-04-01

    Copper oxide-based heterojunction solar cells were fabricated by electrodeposition, and the electronic and optical properties were investigated. ZnO was used as an n-type semiconductor, and copper oxides were used as p-type semiconductors. A photovoltaic device based on an FTO/ZnO/Cu2O heterojunction structure provided short-circuit current density of 2.7 mAcm-2 and open circuit voltage of 0.28 V under an air mass 1.5 illumination. Microstructures of the solar cells were investigated by scanning electron microscope and X-ray diffraction, which indicated formation of copper oxides and ZnO. Energy levels of the solar cells were discussed.

  7. Synthesis of zinc phthalocyanine with large steric hindrance and its photovoltaic performance for dye-sensitized solar cells.

    PubMed

    Lin, Li; Peng, Bosi; Shi, Wenye; Guo, Yingying; Li, Renjie

    2015-03-28

    A zinc phthalocyanine (ZnPc) derivative (Zn-tri-PcNc-8) containing tri-benzonaphtho-condensed porphyrazine with one carboxylic and six diphenylphenoxy peripheral substitutions was designed and synthesized as a sensitizer for dye-sensitized solar cells (DSSCs). For the purpose of extending the absorption spectra while minimizing the formation of ZnPc molecular aggregates, bulky 2,6-diphenylphenoxy groups were used as electron donor moieties, and the carboxylic group as an anchoring group to graft the sensitizer onto the semiconductor. It was found that a TiO2-based solar cell sensitized by Zn-tri-PcNc-8 shows a maximum incident photon-to-current conversion efficiency in the red/near-IR light range (650-750 nm), and a solar cell sensitized at near room temperature (30 °C) for 48 h exhibits the best efficiency (3.01%). The efficiency was much higher than that (1.96%) for a solar cell sensitized by its analogue (Zn-tri-PcNc-2) having one carboxyl and three tert-butyl groups without chenodeoxycholic acid (CDCA), indicating that the introduction of six bulky diphenylphenoxy substitutions with large steric hindrance in the ZnPc macrocycle can effectively suppress the molecular aggregates, thus resulting in an improved conversion efficiency. The present results shed light on an effective solution to adjust the ZnPc property via chemical modification such as changing the "push-pull" effect and adding large steric hindrance substituents to further improve the efficiency of the phthalocyanine-sensitized solar cell. PMID:25716344

  8. Oxide Solar Cells Fabricated Using Zinc Oxide and Plasma-Oxidized Cuprous Oxide

    NASA Astrophysics Data System (ADS)

    Chan, Yi-Ming; Wu, Ya-Ting; Jou, Shyankay

    2012-12-01

    Oxide heterojunction solar cells composed of an n-type Al-doped ZnO (AZO) thin film on the surfaces of p-type Cu2O films were fabricated. The Cu2O films of about 0.34 to 1.67 µm thickness were grown by partial oxidation of a Cu sheet using microwave plasma. The AZO film of 400 nm thickness was deposited by magnetron sputtering. Energy conversion efficiencies of 0.12 to 0.30% were obtained in AZO/Cu2O cells under AM1.5 solar illumination.

  9. ZINC ROUGHER CELLS ON LEFT, ZINC CLEANER CELLS ON RIGHT, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    ZINC ROUGHER CELLS ON LEFT, ZINC CLEANER CELLS ON RIGHT, LOOKING NORTH. NOTE ONE STYLE OF DENVER AGITATOR IN LOWER RIGHT CELL. - Shenandoah-Dives Mill, 135 County Road 2, Silverton, San Juan County, CO

  10. High efficiency and high photo-stability zinc-phthalocyanine based planar heterojunction solar cells with a double interfacial layer

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Min; Whan Kim, Ji; Shim, Hyun-Sub; Kim, Jang-Joo

    2012-09-01

    The use of CuI and MoO3 as a double interfacial layer between indium tin oxide (ITO) and a zinc phthalocyanine (ZnPc) layer improves the power conversion efficiency (ηp) and the photo-stability at the same time in ZnPc based solar cells. Insertion of CuI without MoO3 increased ηp more than 2 times to 3.3%. However, the photo-stability is lowered even further due to diffusion of Cu. Insertion of the MoO3 layer between the ITO and CuI prevents the diffusion of Cu under UV illumination to achieve the improved photo-stability and ηp.

  11. Zinc oxide modified with benzylphosphonic acids as transparent electrodes in regular and inverted organic solar cell structures

    SciTech Connect

    Lange, Ilja; Reiter, Sina; Kniepert, Juliane; Piersimoni, Fortunato; Brenner, Thomas; Neher, Dieter; Pätzel, Michael; Hildebrandt, Jana; Hecht, Stefan

    2015-03-16

    An approach is presented to modify the work function of solution-processed sol-gel derived zinc oxide (ZnO) over an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on phosphonic acids with different dipole moments. This allows us to apply ZnO as charge selective bottom electrodes in either regular or inverted solar cell structures, using poly(3-hexylthiophene):phenyl-C71-butyric acid methyl ester as the active layer. These devices compete with or even surpass the performance of the reference on indium tin oxide/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate. Our findings highlight the potential of properly modified ZnO as electron or hole extracting electrodes in hybrid optoelectronic devices.

  12. Ink jet printable silver metallization with zinc oxide for front side metallization for micro crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Jurk, Robert; Fritsch, Marco; Eberstein, Markus; Schilm, Jochen; Uhlig, Florian; Waltinger, Andreas; Michaelis, Alexander

    2015-12-01

    Ink jet printable water based inks are prepared by a new silver nanoparticle synthesis and the addition of nanoscaled ZnO particles. For the formation of front side contacts the inks are ink jet printed on the front side of micro crystalline silicon solar cells, and contact the cell directly during the firing step by etching through the wafers’ anti-reflection coating (ARC). In terms of Ag dissolution and precipitation the mechanism of contact formation can be compared to commercial glass containing thick film pastes. This avoids additional processing steps, like laser ablation, which are usually necessary to open the ARC prior to ink jet printing. As a consequence process costs can be reduced. In order to optimize the ARC etching and contact formation during firing, zinc oxide nanoparticles are investigated as an ink additive. By utilization of in situ contact resistivity measurements the mechanism of contacting was explored. Our results show that silver inks containing ZnO particles realize a specific contact resistance below 10 mΩṡcm2. By using a multi-pass ink jet printing and plating process a front side metallization of commercial 6  ×  6 inch2 standard micro crystalline silicone solar cells with emitter resistance of 60 Ω/◽ was achieved and showed an efficiency of 15.7%.

  13. Effect of the filtration of PbI2 solution for zinc oxide nanowire based perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Mijanur Rahman, Md.; Uekawa, Naofumi; Shiba, Fumiyuki; Okawa, Yusuke; Sakai, Masatoshi; Yamamoto, Kazunuki; Kudo, Kazuhiro; Konishi, Takehisa

    2016-01-01

    Zinc oxide (ZnO) nanowires (NWs) are grown on fluorine-doped tin oxide (FTO) glass substrates via a simple reactive evaporation method without the presence of any catalysts or additives. The ZnO NWs show high crystallinity and preferential elongation along the c-axis of the hexagonal wurtzite crystal structure. The highly crystalline NWs as electron transporting layer have been used to fabricate the CH3NH3PbI3 perovskite solar cells and their photovoltaic performance were investigated. In this report, we studied the effect of filtration of PbI2-solution on surface morphology of CH3NH3PbI3 layer. Spin-coating of the filtered PbI2-solution leads to a better crystallization and relatively homogenous coverage of the CH3NH3PbI3 film, resulting in an enhancement of the solar cell efficiency compared to the cell fabricated using non-filtrated PbI2-solution. By synthesizing the CH3NH3PbI3 film using filtrated PbI2-solution, we achieved the best power conversion efficiency of 4.8% with a current density of 7.6 mA cm-2, the open circuit voltage of 0.79 V and fill factor of 0.63.

  14. Acute liver failure due to zinc phosphide containing rodenticide poisoning: Clinical features and prognostic indicators of need for liver transplantation.

    PubMed

    Saraf, Vivek; Pande, Supriya; Gopalakrishnan, Unnikrishnan; Balakrishnan, Dinesh; Menon, Ramachandran N; Sudheer, O V; Dhar, Puneet; Sudhindran, S

    2015-07-01

    Zinc phosphide (ZnP) containing rodenticide poisoning is a recognized cause of acute liver failure (ALF) in India. When standard conservative measures fail, the sole option is liver transplantation. Records of 41 patients admitted to a single centre with ZnP-induced ALF were reviewed to identify prognostic indicators for requirement of liver transplantation. Patients were analyzed in two groups: group I (n = 22) consisted of patients who either underwent a liver transplant (n = 14) or died without a transplant (n = 8); group II (n = 19) comprised those who survived without liver transplantation. International normalized ratio (INR) in group I was 9 compared to 3 in group II (p < 0.001). Encephalopathy occurred only in group I. Model for End-Stage Liver Disease (MELD) score in group I was 41 compared to 24 in group II (p < 0.001). MELD score of 36 (sensitivity of 86.7 %, specificity of 90 %) or a combination of INR of 6 and encephalopathy (sensitivity of 100 %, specificity of 83 %) were the best indicators of mortality. Such patients should undergo urgent liver transplantation. PMID:26310868

  15. A review of episodes of zinc phosphide toxicosis in wild geese (Branta spp.) in Oregon (2004−2011)

    USGS Publications Warehouse

    Bildfell, Rob J.; Rumbeiha, Wilson K.; Schuler, Krysten L.; Meteyer, Carol U.; Wolff, Peregrine L.; Gillin, Colin M.

    2013-01-01

    Epizootic mortality in several geese species, including cackling geese (Branta hutchinsii) and Canada geese (Branta canadensis), has been recognized in the Willamette Valley of Oregon for over a decade. Birds are generally found dead on a body of water or are occasionally observed displaying neurologic clinical signs such as an inability to raise or control the head prior to death. Investigation of these epizootic mortality events has revealed the etiology to be accidental poisoning with the rodenticide zinc phosphide (Zn3P2). Gross and histologic changes are restricted to acute pulmonary congestion and edema, sometimes accompanied by distension of the upper alimentary tract by fresh grass. Geese are unusually susceptible to this pesticide; when combined with an epidemiologic confluence of depredation of specific agricultural crops by rodents and seasonal avian migration pathways, epizootic toxicosis may occur. Diagnosis requires a high index of suspicion, appropriate sample collection and handling, plus specific test calibration for this toxicant. Interagency cooperation, education of farmers regarding pesticide use, and enforcement of regulations has been successful in greatly decreasing these mortality events since 2009.

  16. Theoretical design and screening of alkyne bridged triphenyl zinc porphyrins as sensitizer candidates for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhang, Xianxi; Chen, Qianqian; Sun, Huafei; Pan, Tingting; Hu, Guiqi; Ma, Ruimin; Dou, Jianmin; Li, Dacheng; Pan, Xu

    2014-01-01

    Alkyne bridged porphyrins have been proved very promising sensitizers for dye-sensitized solar cells (DSSCs) with the highest photo-to-electric conversion efficiencies of 11.9% solely and 12.3% co-sensitized with other sensitizers achieved. Developing better porphyrin sensitizers with wider electronic absorption spectra to further improve the efficiencies of corresponding solar cells is still of great significance for the application of DSSCs. A series of triphenyl zinc porphyrins (ZnTriPP) differing in the nature of a pendant acceptor group and the conjugated bridge between the porphyrin nucleus and the acceptor unit were modeled and their electronic and spectral properties calculated using density functional theory. As compared with each other and the experimental results of the compounds used in DSSCs previously, the molecules with a relatively longer conjugative linker and a strong electron-withdrawing group such as cyanide adjacent to the carboxyl acid group seem to provide wider electronic absorption spectra and higher photo-to-electric conversion efficiencies. The dye candidates ZnTriPPE, ZnTriPPM, ZnTriPPQ, ZnTriPPR and ZnTriPPS designed in the current work were found promising to provide comparable photo-to-electric conversion efficiencies to the record 11.9% of the alkyne bridged porphyrin sensitizer YD2-o-C8 reported previously.

  17. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. )

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  18. High-efficiency cadmium and zinc-telluride-based thin-film solar cells

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S. )

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  19. Stability Comparison of Perovskite Solar Cells Based on Zinc Oxide and Titania on Polymer Substrates.

    PubMed

    Dkhissi, Yasmina; Meyer, Steffen; Chen, Dehong; Weerasinghe, Hasitha C; Spiccia, Leone; Cheng, Yi-Bing; Caruso, Rachel A

    2016-04-01

    Device scale-up and long-term stability constitute two major hurdles that the emerging perovskite solar technology will have to overcome before commercialization. Here, a comparative study was performed between ZnO and TiO2 electron-selective layers, two materials that allow the low-temperature processing of perovskite solar cells on polymer substrates. Although the use of TiO2 is well established on glass substrates, ZnO was chosen because it can be readily printed at low temperature and offers the potential for the large-scale roll-to-roll manufacturing of flexible photovoltaics at a low cost. However, a rapid degradation of CH3 NH3 PbI3 was observed if it was deposited on ZnO, therefore, the influence of the perovskite film preparation conditions on its morphology and degradation kinetics was investigated. This study showed that CH3 NH3 PbI3 could withstand a higher temperature on TiO2 than ZnO and that TiO2 -based perovskite devices were more stable than their ZnO analogues. PMID:26893225

  20. Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications

    NASA Astrophysics Data System (ADS)

    Bhosle, V.; Prater, J. T.; Yang, Fan; Burk, D.; Forrest, S. R.; Narayan, J.

    2007-07-01

    We report microstructural characteristics and properties of gallium-doped ZnO films deposited on glass by pulsed laser deposition. The Zn0.95Ga0.05O film deposited at 200 °C and 1×10-3 Torr showed predominant ⟨0001⟩ orientation with a metallic behavior and a resistivity of 2×10-4 Ω cm at room temperature. Low resistivity of the ZnGaO films has been explained in terms of optimal combination of carrier concentration and minimized scattering, and is correlated with the microstructure and the deposition parameters. Power conversion efficiency comparable to indium tin oxide-based devices (1.25±0.05%) is achieved on a Zn0.95Ga0.05O/Cu-phthalocyanine/C60 double-heterojunction solar cell.

  1. Dye-sensitized solar cell employing zinc oxide aggregates grown in the presence of lithium

    DOEpatents

    Zhang, Qifeng; Cao, Guozhong

    2013-10-15

    Provided are a novel ZnO dye-sensitized solar cell and method of fabricating the same. In one embodiment, deliberately added lithium ions are used to mediate the growth of ZnO aggregates. The use of lithium provides ZnO aggregates that have advantageous microstructure, morphology, crystallinity, and operational characteristics. Employing lithium during aggregate synthesis results in a polydisperse collection of ZnO aggregates favorable for porosity and light scattering. The resulting nanocrystallites forming the aggregates have improved crystallinity and more favorable facets for dye molecule absorption. The lithium synthesis improves the surface stability of ZnO in acidic dyes. The procedures developed and disclosed herein also help ensure the formation of an aggregate film that has a high homogeneity of thickness, a high packing density, a high specific surface area, and good electrical contact between the film and the fluorine-doped tin oxide electrode and among the aggregate particles.

  2. Phase separation analysis of bulk heterojunctions in small-molecule organic solar cells using zinc-phthalocyanine and C60

    NASA Astrophysics Data System (ADS)

    Schünemann, Christoph; Wynands, David; Wilde, Lutz; Hein, Moritz Philipp; Pfützner, Steffen; Elschner, Chris; Eichhorn, Klaus-Jochen; Leo, Karl; Riede, Moritz

    2012-06-01

    To achieve efficient organic solar cells, donor and acceptor molecules are mixed in the photoactive layer to form a so-called bulk heterojunction. Due to molecular interactions, a certain degree of phase separation between donor and acceptor domains arises, which is necessary to achieve efficient charge extraction within the absorber layer. However, the mechanism that induces the phase separation is not fully understood and gaining detailed information about the molecular arrangement within these blend layers is quite challenging. We show that grazing incidence x-ray diffraction, combined with variable angle spectroscopic ellipsometry is a suitable way to investigate the molecular structure of blend layers in detail, consisting of a mixture of zinc-phthalocyanine (ZnPc) and C60. The degree of phase separation within the blend layer is influenced by substrate heating during the co-evaporation of ZnPc and C60 and by a variation of the mixing ratio. The effect of different blend layer morphologies on optical and electrical device performance is investigated by solar cell characterization and mobility measurements. We find that the molecular arrangement of C60 provides the essential driving force for efficient phase separation. Whereas spherical C60 molecules are able to form crystalline domains when deposited at elevated substrate temperatures, no ZnPc crystallites are observed, although the planar ZnPc molecules are not randomly oriented but standing upright within its domains. Comparing specular and grazing incidence x-ray diffraction, we find that only the latter method is able to detect nanocrystalline C60 in thin films due to its polycrystalline nature and small sized nanocrystallites. Solar cell measurements show an increase in fill factor and external quantum efficiency signal for blends with enhanced phase separation, induced by higher substrate temperatures. However, grazing incidence x-ray diffraction measurements reveal that ZnPc and C60 already form

  3. Synthesis and characterisation of Copper Zinc Tin Sulphide (CZTS) compound for absorber material in solar-cells

    NASA Astrophysics Data System (ADS)

    Kheraj, Vipul; Patel, K. K.; Patel, S. J.; Shah, D. V.

    2013-01-01

    The development of thin-film semiconductor compounds, such as Copper Indium Gallium Selenide (CIGS), has caused remarkable progress in the field of thin-film photovoltaics. However, the scarcity and the increasing prices of indium impose the hunt for alternative materials. The Copper Zinc Tin Sulphide (CZTS) is one of the promising emerging materials with Kesterite-type crystal structure and favourable material properties like high absorption co-efficient and direct band-gap. Moreover, all the constituent elements of CZTS are non-toxic and aplenty on the earth-crust, making it a potential candidate for the thin-film photovoltaics. Here we report the synthesis of CZTS powder from its constituent elements, viz. copper, zinc, tin and sulphur, in an evacuated Quartz ampoule at 1030 K temperature. The sulphur content in the raw mixture in the ampoule was varied and optimised in order to attain the desired atomic stoichiometry of the compound. The synthesised powder was characterised by X-Ray diffraction technique (XRD), Raman Scattering Spectroscopy, Energy Dispersive Analysis of X-Ray (EDAX) and UV-Visible Absorption Spectra. The XRD Patterns of the synthesised compound show the preferred orientation of (112), (220) and (312) planes, confirming the Kesterite structure of CZTS. The chemical composition of the powder was analysed by EDAX and shows good atomic stoichiometry of the constituent elements in the CZTS compound. The UV-Vis absorption spectra confirm the direct band-gap of about 1.45 eV, which is quite close to the optimum value for the semiconductor material as an absorber in solar-cells.

  4. Porphyrin Dye-Sensitized Zinc Oxide Aggregated Anodes for Use in Solar Cells.

    PubMed

    Syu, Yu-Kai; Tingare, Yogesh; Lin, Shou-Yen; Yeh, Chen-Yu; Wu, Jih-Jen

    2016-01-01

    Porphyrin YD2-o-C8-based dyes were employed to sensitize room-temperature (RT) chemical-assembled ZnO aggregated anodes for use in dye-sensitized solar cells (DSSCs). To reduce the acidity of the YD2-o-C8 dye solution, the proton in the carboxyl group of a porphyrin dye was replaced with tetrabuthyl ammonium (TBA⁺) in this work. The short-circuit current density (Jsc) of the YD2-o-C8-TBA-sensitized ZnO DSSCs is higher than that of the YD2-o-C8-sensitized cells, resulting in the improvement of the efficiency of the YD2-o-C8-based ZnO DSSCs. With an appropriate incorporation of chenodeoxycholic acid (CDCA) as coadsorbate, the Jsc and efficiency of the YD2-o-C8-TBA-sensitized ZnO DSSC are enhanced due to the improvement of the incident-photon-to-current efficiency (IPCE) values in the wavelength range of 400-450 nm. Moreover, a considerable increase in Jsc is achieved by the addition of a light scattering layer in the YD2-o-C8-TBA-sensitized ZnO photoanodes. Significant IPCE enhancement in the range 475-600 nm is not attainable by tuning the YD2-o-C8-TBA sensitization processes for the anodes without light scattering layers. Using the RT chemical-assembled ZnO aggregated anode with a light scattering layer, an efficiency of 3.43% was achieved in the YD2-o-C8-TBA-sensitized ZnO DSSC. PMID:27527136

  5. Thin film solar cell module

    SciTech Connect

    Gay, R.R.

    1987-01-20

    A thin film solar cell module is described comprising a first solar cell panel containing an array of solar cells consisting of a TFS semiconductor sandwiched between a transparent conductive zinc oxide layer and a transparent conductive layer selected from the group consisting of tin oxide, indium tin oxide, and zinc oxide deposited upon a transparent superstrate, and a second solar cell panel containing an array of solar cells consisting of a CIS semiconductor layer sandwiched between a zinc oxide semiconductor layer and a conductive metal layer deposited upon an insulating substrate. The zinc oxide semiconductor layer contains a first relatively thin layer of high resistivity zinc oxide adjacent the CIS semiconductor and a second relatively thick layer of low resistivity zinc oxide overlying the high resistivity zinc oxide layer. The transparent conductive zinc oxide layer of the first panel faces the low resistivity zinc oxide layer of the second panel, the first and second panels being positioned optically in series and separated by a transparent insulating layer.

  6. Dye-sensitized solar cell characteristics of nanocomposite zinc ferrite working electrode: Effect of composite precursors and titania as a blocking layer on photovoltaic performance

    NASA Astrophysics Data System (ADS)

    Habibi, Mohammad Hossein; Habibi, Amir Hossein; Zendehdel, Mahmoud; Habibi, Mehdi

    2013-06-01

    This research investigates the performance of a zinc ferrite (ZF) as working electrodes in a dye-sensitized solar cell (DSSC). This ZF working electrode was prepared by sol-gel and thermal decomposition of four different precursors including: zinc acetate dihydrate (Zn(CH3COO)2ṡ2H2O), ferric nitrate nonahydrate (Fe(NO3)3ṡ9H2O), iron(III) acetate; Fe(C2H3O2)3, and zinc nitrate hexahydrate, Zn(NO3)2ṡ6H2O. The effects of annealing temperature and precursors on the structural, morphological, and optical properties were investigated. The field emission scanning electron microscope images (FESEM) and scanning electron microscopy (SEM) show that ZFe films are polycrystalline in nature and homogeneous with densely packed grains. Nanoporous zinc ferrite coatings were prepared by doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in DSSC. In all DSSCs, platinized FTO and [Co(bpy)3]2+/3+ in 3-methoxy proponitrile were used as counter electrode and redox mediator system respectively. Comparing the fill factors of four different zinc ferrite nanocomposites, the highest fill factor was for ZnFe2O4-TBL sample. Cell fabricated with ZnFeA working electrode shows relatively higher Jsc.

  7. Nanostructuring on zinc phthalocyanine thin films for single-junction organic solar cells

    NASA Astrophysics Data System (ADS)

    Chaudhary, Dhirendra K.; Kumar, Lokendra

    2016-05-01

    Vertically aligned and random oriented crystalline molecular nanorods of organic semiconducting Zinc Phthalocyanine (ZnPc) have been grown on ITO coated glass substrate using solvent volatilization method. Interesting changes in surface morphology were observed under different solvent treatment. Vertically aligned nanorods of ZnPc thin film were observed in the films treated with acetone, where as the random oriented nanorods were observed in the films treated with chloroform. The X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) have been used for characterization of nanostructures. The optical properties of the nanorods have been investigated by UV-Vis. absorption spectroscopy.

  8. Highly porous Zinc Stannate (Zn2SnO4) nanofibers scaffold photoelectrodes for efficient methyl ammonium halide perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Mali, Sawanta S.; Su Shim, Chang; Kook Hong, Chang

    2015-06-01

    Development of ternary metal oxide (TMO) based electron transporting layer (ETL) for perovskite solar cell open a new approaches toward efficient a unique strategy for solid state dye-sensitized solar cells (ssDSSCs). In the present investigation, highly porous zinc tin oxide (Zn2SnO4) scaffold nanofibers has been synthesized by electrospinning technique and successfully used for methyl ammonium lead halide (CH3NH3PbI3) perovskite sensitized solid state solar cells. The fabricated optimized perovskite solar cell devices exhibited 7.38% power conversion efficiency (PCE) with open circuit voltage (VOC) 0.986 V, current density (JSC) = 12.68 mAcm-2 and fill factor (FF) 0.59 under AM 1.5 G sunlight (100 mWcm-2) which is higher than Zn2SnO4 nanoparticle (η = 2.52%) based perovskite solar cells. This improvement is achieved due to high porosity of Zn2SnO4 nanofibers and high crystallinity of the nanofibers synthesized at 700 °C. These results are remarkably higher than reported perovskite solar cells based on such type of ternary metal oxide ETLs.

  9. Highly porous Zinc Stannate (Zn2SnO4) nanofibers scaffold photoelectrodes for efficient methyl ammonium halide perovskite solar cells.

    PubMed

    Mali, Sawanta S; Shim, Chang Su; Hong, Chang Kook

    2015-01-01

    Development of ternary metal oxide (TMO) based electron transporting layer (ETL) for perovskite solar cell open a new approaches toward efficient a unique strategy for solid state dye-sensitized solar cells (ssDSSCs). In the present investigation, highly porous zinc tin oxide (Zn2SnO4) scaffold nanofibers has been synthesized by electrospinning technique and successfully used for methyl ammonium lead halide (CH3NH3PbI3) perovskite sensitized solid state solar cells. The fabricated optimized perovskite solar cell devices exhibited 7.38% power conversion efficiency (PCE) with open circuit voltage (VOC) 0.986 V, current density (JSC) = 12.68 mAcm(-2) and fill factor (FF) 0.59 under AM 1.5 G sunlight (100 mWcm(-2)) which is higher than Zn2SnO4 nanoparticle (η = 2.52%) based perovskite solar cells. This improvement is achieved due to high porosity of Zn2SnO4 nanofibers and high crystallinity of the nanofibers synthesized at 700 °C. These results are remarkably higher than reported perovskite solar cells based on such type of ternary metal oxide ETLs. PMID:26094863

  10. Highly porous Zinc Stannate (Zn2SnO4) nanofibers scaffold photoelectrodes for efficient methyl ammonium halide perovskite solar cells

    PubMed Central

    Mali, Sawanta S.; Su Shim, Chang; Kook Hong, Chang

    2015-01-01

    Development of ternary metal oxide (TMO) based electron transporting layer (ETL) for perovskite solar cell open a new approaches toward efficient a unique strategy for solid state dye-sensitized solar cells (ssDSSCs). In the present investigation, highly porous zinc tin oxide (Zn2SnO4) scaffold nanofibers has been synthesized by electrospinning technique and successfully used for methyl ammonium lead halide (CH3NH3PbI3) perovskite sensitized solid state solar cells. The fabricated optimized perovskite solar cell devices exhibited 7.38% power conversion efficiency (PCE) with open circuit voltage (VOC) 0.986 V, current density (JSC) = 12.68 mAcm-2 and fill factor (FF) 0.59 under AM 1.5 G sunlight (100 mWcm−2) which is higher than Zn2SnO4 nanoparticle (η = 2.52%) based perovskite solar cells. This improvement is achieved due to high porosity of Zn2SnO4 nanofibers and high crystallinity of the nanofibers synthesized at 700 °C. These results are remarkably higher than reported perovskite solar cells based on such type of ternary metal oxide ETLs. PMID:26094863

  11. Growth and characterization of thin film zinc-silicon-arsenide for solar cells

    NASA Astrophysics Data System (ADS)

    Igwe, G. A.

    Conditions for good morphology synthesis and epilayer growth of thin film Zinc Silicon Arsenide (ZnSiAs2) by the metallorganic chemical vapor deposition (MO-CVD) technique have been investigated. Structural, electrical and optical properties of such ZnSiAs2 layers were studied using several diverse methods including electron microprobe, X-ray diffraction, auger electron spectroscopy, secondary ion mass spectrometry, electron beam induced currents, photovoltaic spectral response, current-voltage and capacitance-voltage characteristics of heterostructures. Many problems generally associated with heteroepitaxial growth of semiconducting materials were much in evidence. In particular, interfacial diffusion resulting in autodoping of both substrate and the grown epilayer precluded rectifying heterojunction formation for ZnSiAs2 layers grown on Ge, GaAs or Si substrate. The lattice mismatch of about three percent between silicon and ZnSiAs2 provided additional problems of microcracks in and nonadherence of the epilayers.

  12. Effects of target angle on the properties of aluminum doped zinc oxide films prepared by DC magnetron sputtering for thin film solar cell applications.

    PubMed

    Park, Hyeongsik; Iftiquar, S M; Thuy, Trinh Than; Jang, Juyeon; Ahn, Shihyun; Kim, Sunbo; Lee, Jaehyeong; Jung, Junhee; Shin, Chonghoon; Kim, Minbum; Yi, Junsin

    2014-10-01

    An aluminum doped zinc oxide (AZO) films for front contacts of thin film solar cells, in this work, were prepared by DC magnetron sputtering with different target angles. Effects of target angles on the structural and electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. The surface became more irregular with increasing the target angle due to larger grains. The self-surface textured morphology, which is a favorable property as front layer of solar cell, exhibited at target angle of 72.5 degrees. We obtained the films with various opto-electronic properties by controlling target angle from 32.5 degrees to 72.5 degrees. The spectral haze increased substantially with the target angle, whereas the electrical resistivity was increased. The conversion efficiency of amorphous silicon solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density and fill factor, compared to cell with relatively flat AZO films. PMID:25942853

  13. Solution Processing of Cadmium Sulfide Buffer Layer and Aluminum-Doped Zinc Oxide Window Layer for Thin Films Solar Cells

    NASA Astrophysics Data System (ADS)

    Alam, Mahboob; Islam, Mohammad; Achour, Amine; Hayat, Ansar; Ahsan, Bilal; Rasheed, Haroon; Salam, Shahzad; Mujahid, Mohammad

    2014-07-01

    Cadmium sulfide (CdS) and aluminum-doped zinc oxide (Al:ZnO) thin films are used as buffer layer and front window layer, respectively, in thin film solar cells. CdS and Al:ZnO thin films were produced using chemical bath deposition (CBD) and sol-gel technique, respectively. For CBD CdS, the effect of bath composition and temperature, dipping time and annealing temperature on film properties was investigated. The CdS films are found to be polycrystalline with metastable cubic crystal structure, dense, crack-free surface morphology and the crystallite size of either few nanometers or 12-17 nm depending on bath composition. In case of CdS films produced with 1:2 ratio of Cd and S precursors, spectrophotometer studies indicate quantum confinement effect, owing to extremely small crystallite size, with an increase in Eg value from 2.42 eV (for bulk CdS) to 3.76 eV along with a shift in the absorption edge toward 330 nm wavelength. The optimum annealing temperature is 400°C beyond which film properties deteriorate through S evaporation and CdO formation. On the other hand, Al:ZnO films prepared via spin coating of precursor sols containing 0.90-1.10 at.% Al show that, with an increase in Al concentration, the average grain size increases from 28 nm to 131 nm with an associated decrease in root-mean-square roughness. The minimum value of electrical resistivity, measured for the films prepared using 0.95 at.% Al in the precursor sol, is 2.7 × 10-4 Ω ṡ cm. The electrical resistivity value rises upon further increase in Al doping level due to introduction of lattice defects and Al segregation to the grain boundary area, thus limiting electron transport through it.

  14. Theoretical Characterization of Zinc Phthalocyanine and Porphyrin Analogs for Organic Solar Cell Absorption

    NASA Astrophysics Data System (ADS)

    Theisen, Rebekah

    The absorption spectra of metal-centered phthalocyanines (MPc's) have been investigated since the early 1960's. With improved experimental techniques to characterize this class of molecules the band assignments have advanced. The characterization remains difficult with historic disagreements. A new push for characterization came with a wave of interest in using these molecules for absorption/donor molecules in organic photovoltaics. The use of zinc phthalocyanine (ZnPc) became of particular interest, in addition to novel research being done for azaporphyrin analogs of ZnPc. A theoretical approach is taken to research the excited states of these molecules using time-dependent density functional theory (TDDFT). Most theoretical results for the first excited state in ZnPc are in only limited agreement with experiment (errors near 0.1 eV or higher). This research investigates ZnPc and 10 additional porphyrin analogs. Excited-state properties are predicted for 8 of these molecules using ab initio computational methods and symmetry breaking for accurate time- dependent self-consistent optimization. Franck-Condon analysis is used to predict the Q-band absorption spectra for all 8 of these molecules. This is the first time that Franck-Condon analysis has been reported in absolute units for any of these molecules. The first excited-state energy for ZnPc is found to be the closest to experiment thus far using a range-separated meta-GGA hybrid functional. The theoretical results are used to find a trend in the novel design of new porphyrin analog molecules.

  15. Suppression of zinc dendrites in zinc electrode power cells

    NASA Technical Reports Server (NTRS)

    Damjanovic, A.; Diggle, J. W.

    1970-01-01

    Addition of various tetraalkyl quarternary ammonium salts, to alkaline zincate electrolyte of cell, prevents formation of zinc dendrites during charging of zinc electrode. Electrode capacity is not impaired and elimination of dendrites prolongs cell life.

  16. High efficiency cadmium and zinc telluride-based thin film solar cells

    SciTech Connect

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. . School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  17. High efficiency cadmium and zinc telluride-based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Rohatgi, A.; Summers, C. J.; Erbil, A.; Sudharsanan, R.; Ringel, S.

    1990-10-01

    Polycrystalline Cd(1-x)Zn(x)Te and Cd(1-x)Mn(x)Te films with a band gap of 1.7 eV were successfully grown on glass/SnO2/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd(1-x)Zn(x)Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd(1-x)Mn(x)Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd(1-x)Mn(x)Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5 percent. MBE-grown CdTe cells also produced 8 to 9 percent efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl2 + ZnCl2 chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  18. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

    1995-01-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  19. Fabrication and characterization of P3HT:PCBM-based thin film organic solar cells with zinc phthalocyanine

    SciTech Connect

    Maruhashi, Haruto Oku, Takeo Suzuki, Atsushi Akiyama, Tsuyoshi; Yamasaki, Yasuhiro

    2015-02-27

    [6,6]–phenyl C{sub 61}–butyric acid methyl ester and poly(3–hexylthiophene) bulk heterojunction solar cells added with zinc–tetra–tertiary–butyl–phthalocyanine (ZnPc) were fabricated and characterized. The photovoltaic properties of the solar cells with an inverted structure were improved by the ZnPc addition, which were investigated on the bases of current density–voltage characteristics, incident photon to current conversion efficiency.

  20. Aluminum phosphide

    Integrated Risk Information System (IRIS)

    Aluminum phosphide ; CASRN 20859 - 73 - 8 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinoge

  1. Efficient and ultraviolet durable inverted organic solar cells based on an aluminum-doped zinc oxide transparent cathode

    NASA Astrophysics Data System (ADS)

    Liu, Hanxiao; Wu, Zhenghui; Hu, Jianqiao; Song, Qunliang; Wu, Bo; Lam Tam, Hoi; Yang, Qingyi; Hong Choi, Wing; Zhu, Furong

    2013-07-01

    High performance inverted bulk heterojunction organic solar cells (OSCs), based on the blend of poly[[4,8-bis[(2-ethylhexyl)oxy] benzo [1,2-b:4,5-b'] dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl

  2. Low-Symmetrical Zinc(II) Benzonaphthoporphyrazine Sensitizers for Light-Harvesting in Near-IR Region of Dye-Sensitized Solar Cells.

    PubMed

    Ikeuchi, Takuro; Mori, Shogo; Kobayashi, Nagao; Kimura, Mutsumi

    2016-05-16

    Two ring-expanded naphthalocyanine-based sensitizers NcS1 and NcS2 have been designed and synthesized to harvest near-IR light energy in dye-sensitized solar cells. Low-symmetrical "push-pull" structures of NcS1 and NcS2 enable the red-shift of absorption spectrum as well as the defined Q-band splitting. The zinc benzonaphthoporphyrazine sensitizer NcS1 possessing one carboxylic acid and six 2,6-diisopropylphenoxy units showed a PCE value of 3.2% when used as a light-harvesting dye on a TiO2 electrode under one sun condition. The NcS1 cell showed a broad photoresponse at wavelengths from 600 to 850 nm. PMID:27120343

  3. Solar cells

    NASA Astrophysics Data System (ADS)

    Cuquel, A.; Roussel, M.

    The physical and electronic characteristics of solar cells are discussed in terms of space applications. The principles underlying the photovoltaic effect are reviewed, including an analytic model for predicting the performance of individual cells and arrays of cells. Attention is given to the effects of electromagnetic and ionizing radiation, micrometeors, thermal and mechanical stresses, pollution and degassing encountered in space. The responses of different types of solar cells to the various performance-degrading agents are examined, with emphasis on techniques for quality assurance in the manufacture and mounting of Si cells.

  4. Routes to copper zinc tin sulfide Cu2ZnSnS4 a potential material for solar cells.

    PubMed

    Ramasamy, Karthik; Malik, Mohammad A; O'Brien, Paul

    2012-06-11

    Power generation through photovoltaics (PV) has been growing at an average rate of 40% per year over the last decade; but has largely been fuelled by conventional Si-based technologies. Such cells involve expensive processing and many alternatives use either toxic, less-abundant and or expensive elements. Kesterite Cu(2)ZnSnS(4) (CZTS) has been identified as a solar energy material composed of both less toxic and more available elements. Power conversion efficiencies of 8.4% (vacuum processing) and 10.1% (non-vacuum processing) from cells constructed using CZTS have been achieved to date. In this article, we review various deposition methods for CZTS thin films and the synthesis of CZTS nanoparticles. Studies of direct relevance to solar cell applications are emphasised and characteristic properties are collated. PMID:22531115

  5. Very High Efficiency Triple Junction Solar Cells Based On (AL)InGaP Compounds

    NASA Astrophysics Data System (ADS)

    Gori, Gabriele; Campesato, Roberta; Casale, Maria Cristina; Gabetta, Giuseppe

    2011-10-01

    In this paper we report the theoretical and experimental results related to the use of Aluminium Gallium Indium Phosphide (AlInGaP) as substitute of Gallium Indium Phosphide (InGaP) semiconductor, in the realization of high efficiency triple junction solar cells for space applications. The (Al)InGaP/GaAs/Ge solar cells have been modelled and manufactured on standard and thin Germanium wafers; the measurements under AM0 spectrum 25 °C, showed efficiencies above 30% both on standard and thin Ge wafers.

  6. Comparative modeling of InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1991-01-01

    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  7. Wurtzite copper-zinc-tin sulfide as a superior counter electrode material for dye-sensitized solar cells

    PubMed Central

    2013-01-01

    Wurtzite and kesterite Cu2ZnSnS4 (CZTS) nanocrystals were employed as counter electrode (CE) materials for dye-sensitized solar cells (DSSCs). Compared to kesterite CZTS, the wurtzite CZTS exhibited higher electrocatalytic activity for catalyzing reduction of iodide electrolyte and better conductivity. Accordingly, the DSSC with wurtzite CZTS CE generated higher power conversion efficiency (6.89%) than that of Pt (6.23%) and kesterite CZTS (4.89%) CEs. PMID:24191954

  8. Wurtzite copper-zinc-tin sulfide as a superior counter electrode material for dye-sensitized solar cells.

    PubMed

    Kong, Jun; Zhou, Zheng-Ji; Li, Mei; Zhou, Wen-Hui; Yuan, Sheng-Jie; Yao, Rong-Yue; Zhao, Yang; Wu, Si-Xin

    2013-01-01

    Wurtzite and kesterite Cu2ZnSnS4 (CZTS) nanocrystals were employed as counter electrode (CE) materials for dye-sensitized solar cells (DSSCs). Compared to kesterite CZTS, the wurtzite CZTS exhibited higher electrocatalytic activity for catalyzing reduction of iodide electrolyte and better conductivity. Accordingly, the DSSC with wurtzite CZTS CE generated higher power conversion efficiency (6.89%) than that of Pt (6.23%) and kesterite CZTS (4.89%) CEs. PMID:24191954

  9. Wurtzite copper-zinc-tin sulfide as a superior counter electrode material for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Kong, Jun; Zhou, Zheng-Ji; Li, Mei; Zhou, Wen-Hui; Yuan, Sheng-Jie; Yao, Rong-Yue; Zhao, Yang; Wu, Si-Xin

    2013-11-01

    Wurtzite and kesterite Cu2ZnSnS4 (CZTS) nanocrystals were employed as counter electrode (CE) materials for dye-sensitized solar cells (DSSCs). Compared to kesterite CZTS, the wurtzite CZTS exhibited higher electrocatalytic activity for catalyzing reduction of iodide electrolyte and better conductivity. Accordingly, the DSSC with wurtzite CZTS CE generated higher power conversion efficiency (6.89%) than that of Pt (6.23%) and kesterite CZTS (4.89%) CEs.

  10. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    NASA Astrophysics Data System (ADS)

    Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-01

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  11. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    SciTech Connect

    Chen, Dazheng; Zhang, Chunfu Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-16

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  12. Solar Hydrogen Production Using Molecular Catalysts Immobilized on Gallium Phosphide (111)A and (111)B Polymer-Modified Photocathodes.

    PubMed

    Beiler, Anna M; Khusnutdinova, Diana; Jacob, Samuel I; Moore, Gary F

    2016-04-20

    We report the immobilization of hydrogen-producing cobaloxime catalysts onto p-type gallium phosphide (111)A and (111)B substrates via coordination to a surface-grafted polyvinylimidazole brush. Successful grafting of the polymeric interface and subsequent assembly of cobalt-containing catalysts are confirmed using grazing angle attenuated total reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Photoelectrochemical testing in aqueous conditions at neutral pH shows that cobaloxime modification of either crystal face yields a similar enhancement of photoperformance, achieving a greater than 4-fold increase in current density and associated rates of hydrogen production as compared to results obtained using unfunctionalized electrodes tested under otherwise identical conditions. Under simulated solar illumination (100 mW cm(-2)), the catalyst-modified photocathodes achieve a current density ≈ 1 mA cm(-2) when polarized at 0 V vs the reversible hydrogen electrode reference and show near-unity Faradaic efficiency for hydrogen production as determined by gas chromatography analysis of the headspace. This work illustrates the modularity and versatility of the catalyst-polymer-semiconductor approach for directly coupling light harvesting to fuel production and the ability to export this chemistry across distinct crystal face orientations. PMID:26998554

  13. Correlation of open-circuit voltage and energy levels in zinc-phthalocyanine: C60 bulk heterojunction solar cells with varied mixing ratio

    NASA Astrophysics Data System (ADS)

    Tietze, Max L.; Tress, Wolfgang; Pfützner, Steffen; Schünemann, Christoph; Burtone, Lorenzo; Riede, Moritz; Leo, Karl; Vandewal, Koen; Olthof, Selina; Schulz, Philip; Kahn, Antoine

    2013-08-01

    The maximum open-circuit voltage VOC of bulk-heterojunction solar cells is limited by the effective HOMO(donor)-LUMO(acceptor) gap of the photoactive absorber blend. We investigate blend layers comprising zinc-phthalocyanine (ZnPc) and the buckminster fullerene C60 with ultraviolet, x-ray, and inverse photoelectron spectroscopy. By varying the volume mixing ratio ZnPc:C60 from 6:1 to 1:6, we observe a linear increase of the HOMO(ZnPc)-LUMO(C60) gap by 0.25 eV. The trend in this gap correlates with the change in the charge transfer energy measured by Fourier-transform photocurrent spectroscopy as well as with the observed open-circuit voltage of solar cells containing ZnPc:C60 as the photoactive absorber layer. Furthermore, the morphology of different ZnPc:C60 blend layers is investigated by grazing-incidence x-ray diffraction. As physical origins for the changed energy levels, a suppressed crystallization of the C60 phase in the presence of donor molecules as well as concentration-dependent growth modes of the ZnPc phase are suggested.

  14. Solar cells

    NASA Astrophysics Data System (ADS)

    Treble, F. C.

    1980-11-01

    The history, state of the art, and future prospects of solar cells are reviewed. Solar cells are already competitive in a wide range of low-power applications, and during the 1980's they are expected to become cheaper to run than diesel or gasoline generators, the present mainstay of isolated communities. At this stage they will become attractive for water pumping, irrigation, and rural electrification, particularly in developing countries. With further cost reduction, they may be used to augment grid supplies in domestic, commercial, institutional, and industrial premises. Cost reduction to the stage where photovoltaics becomes economic for large-scale power generation in central stations depends on a technological breakthrough in the development of thin-film cells. DOE aims to reach this goal by 1990, so that by the end of the century about 20% of the estimated annual additions to their electrical generating capacity will be photovoltaic.

  15. Chemisorption of a thiol-functionalized ruthenium dye on zinc oxide nanoparticles: Implications for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Singh, Jagdeep; Im, Jisun; Whitten, James E.; Soares, Jason W.; Steeves, Diane M.

    2010-09-01

    ZnO is an alternative to TiO 2-based dye-sensitized solar cells (DSSCs). Adsorption of cis-ruthenium-bis[2,2'-bipyridine]-bis[4-thiopyridine] onto ZnO nanorods has been studied using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). XPS indicates chemisorption with a surface density of ca. 1 × 10 15 molecules/cm 2, confirming the possibility of using thiol-terminated dyes for ZnO-based DSSC devices. The energy level diagram, based on UPS and absorbance spectroscopy, indicates that the LUMO of this dye is lower in energy than the ZnO conduction band edge, providing minimal enthalpic driving force for photovoltaic electron injection. However, optimization of thiol-functionalized Ru dyes could result in competitive ZnO-based DSSCs.

  16. Preparation of n-ZnO/ p-Si solar cells by oxidation of zinc nanoparticles: effect of oxidation temperature on the photovoltaic properties

    NASA Astrophysics Data System (ADS)

    Ismail, Raid A.; Al-Jawad, Selma M. H.; Hussein, Naba

    2014-12-01

    In this study, n-ZnO/ p-Si solar cells were fabricated by spraying ZnO nanoparticles (NPs) film synthesised by dissolving of high purity zinc in hydrogen peroxide H2O2 followed by thermal oxidation in air on p-type silicon substrates. The oxidation was carried out at different temperatures (200-500) °C. The crystalline structure of the ZnO NPs films was investigated by X-ray diffraction which indicated wurtzite structure films along (100) plane. The morphology of the NPs was studied by atomic force microscopy and scanning electron microscopy. The result showed an average grain size of ZnO NPs in the range of (72.7-95.8) nm and the surface roughness increasing with oxidation temperature. Three peaks located at ultraviolet, violet and green emission regions were noticed in the photoluminescence spectra of ZnO NPs. From optical studies, it was shown that the direct optical band gap is found to be in the range of (3.85-3.96) eV depended on the oxidation temperature. The synthesised ZnO films have n-type conductivity, and the mobility was in the range of (7-24) cm2 V-1 s-1. Current-voltage I- V and capacitance-voltage C- V of ZnO NPs/Si heterojunction solar cell were investigated as function of oxidation temperature. The spectral response of n-ZnO NPs/ p-Si solar cell showed two peaks of response and its maximum value approaching 0.62 mA W-1 at λ = 800 nm. Solar cell oxidized at 500 °C gave open circuit voltage V OC of 375 mV, short circuit current density J SC of 25 mA cm-2, a fill factor FF of 0.72, and conversion efficiency η of 6.79 % under illumination of 100 mW cm-2.

  17. Aluminium phosphide-induced leukopenia.

    PubMed

    Ntelios, Dimitrios; Mandros, Charalampos; Potolidis, Evangelos; Fanourgiakis, Panagiotis

    2013-01-01

    Acute intoxication from the pesticide aluminium phosphide is a relatively rare, life-threatening condition in which cardiovascular decompensation is the most feared problem. We report the case of a patient exposed to aluminium phosphide-liberated phosphine gas. It resulted in the development of a gastroenteritis-like syndrome accompanied by severe reduction in white blood cell numbers as an early and prominent manifestation. By affecting important physiological processes such as mitochondrial function and reactive oxygen species homeostasis, phosphine could cause severe toxicity. After presenting the characteristics of certain leucocyte subpopulations we provide the current molecular understanding of the observed leukopenia which in part seems paradoxical. PMID:24172776

  18. Aluminium phosphide-induced leukopenia

    PubMed Central

    Ntelios, Dimitrios; Mandros, Charalampos; Potolidis, Evangelos; Fanourgiakis, Panagiotis

    2013-01-01

    Acute intoxication from the pesticide aluminium phosphide is a relatively rare, life-threatening condition in which cardiovascular decompensation is the most feared problem. We report the case of a patient exposed to aluminium phosphide-liberated phosphine gas. It resulted in the development of a gastroenteritis-like syndrome accompanied by severe reduction in white blood cell numbers as an early and prominent manifestation. By affecting important physiological processes such as mitochondrial function and reactive oxygen species homeostasis, phosphine could cause severe toxicity. After presenting the characteristics of certain leucocyte subpopulations we provide the current molecular understanding of the observed leukopenia which in part seems paradoxical. PMID:24172776

  19. Indium-gallium-zinc-oxide layer used to increase light transmittance efficiency of adhesive layer for stacked-type multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko; Sameshima, Toshiyuki

    2015-11-01

    We report the increase in transmittance efficiency of the intermediate layer for multijunction solar cells caused by the indium-gallium-zinc-oxide (IGZO) layer used as the antireflection layer. Si substrates coated with a 200-nm-thick IGZO layer with a refractive index of 1.85 were prepared. The resistivity of the IGZO layer was increased from 0.0069 (as-deposited) to 0.032 Ω cm by heat treatment at 350 °C for 1 h to prevent free-carrier optical absorption. Samples with the Si/IGZO/adhesive/IGZO/Si structure were fabricated. The average transmissivity for wavelengths between 1200 and 1600 nm was 49%, which was close to 55% of single-crystal silicon substrates. A high effective transmittance efficiency of 89% was experimentally achieved. The numerical calculation showed in an effective transmittance efficiency of 99% for 170-nm-thick antireflection layers with a resistivity of 0.6 Ω cm and a refractive index of 2.1.

  20. Acute changes in cellular zinc alters zinc uptake rates prior to zinc transporter gene expression in Jurkat cells.

    PubMed

    Holland, Tai C; Killilea, David W; Shenvi, Swapna V; King, Janet C

    2015-12-01

    A coordinated network of zinc transporters and binding proteins tightly regulate cellular zinc levels. Canonical responses to zinc availability are thought to be mediated by changes in gene expression of key zinc transporters. We investigated the temporal relationships of actual zinc uptake with patterns of gene expression in membrane-bound zinc transporters in the human immortalized T lymphocyte Jurkat cell line. Cellular zinc levels were elevated or reduced with exogenous zinc sulfate or N,N,N',N-tetrakis(2-pyridylmethyl)ethylenediamine (TPEN), respectively. Excess zinc resulted in a rapid 44 % decrease in the rate of zinc uptake within 10 min. After 120 min, the expression of metallothionein (positive control) increased, as well as the zinc exporter, ZnT1; however, the expression of zinc importers did not change during this time period. Zinc chelation with TPEN resulted in a rapid twofold increase in the rate of zinc uptake within 10 min. After 120 min, the expression of ZnT1 decreased, while again the expression of zinc importers did not change. Overall, zinc transporter gene expression kinetics did not match actual changes in cellular zinc uptake with exogenous zinc or TPEN treatments. This suggests zinc transporter regulation may be the initial response to changes in zinc within Jurkat cells. PMID:26420239

  1. GaAsP on GaP top solar cells

    NASA Technical Reports Server (NTRS)

    Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

    1985-01-01

    GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

  2. First-principles study on the electronic and optical properties of Si and Al co-doped zinc oxide for solar cell devices

    NASA Astrophysics Data System (ADS)

    Abbassi, A.; El Amrani, A.; Ez-Zahraouy, H.; Benyoussef, A.; El Amraoui, Y.

    2016-06-01

    Electronic and optical properties of co-doped zinc oxide ZnO with silicon (Si) and aluminum (Al), in Zn1-2 x Si x Al x O (0 ≤ x ≤ 0.0625) original structure forms, are investigated by the first-principles calculations based on the density functional theory (DFT). The optical constants and dielectric functions are investigated with the full-potential linearized augmented plane wave (FP-LAPW) method and the generalized gradient approximation (GGA) by WIEN2k package. The complex dielectric functions, refractive index and band gap of the pure as well as doped and co-doped ZnO were investigated, which are in good agreement with the available experimental results for the undoped ZnO. Thus, the maximum optical transmittance of the co-doped ZnO of about 95 % was achieved; it is higher than that of pure ZnO. Thus, we showed for the Si-Al co-doped ZnO with x = 0.0315 that the optical transmittance can cover a larger range in the visible light region. In addition, an occurrence of important energy levels around Fermi levels was showed, which is mainly due to doping atoms that lead to an overlap between valence and conduction bands, and consequently to the significant conductor behavior of the Si-Al co-doped ZnO. The original Zn1-2 x Si x Al x O structure reveals promising optical and electronic properties, and it can be investigated as good candidates for practical uses as transparent and conducting electrodes in solar cell devices.

  3. Nanowire-based All Oxide Solar Cells

    SciTech Connect

    Yang*, Benjamin D. Yuhas and Peidong; Yang, Peidong

    2008-12-07

    We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the addition of an intermediate oxide insulating layer between the nanowires and the nanoparticles. This observation of the important dependence of the shunt resistance on the photovoltaic performance is widely applicable to any nanowire solar cell constructed with the nanowire array in direct contact with one electrode.

  4. Topotactic Conversion of Copper(I) Phosphide Nanowires for Sensitive Electrochemical Detection of H2O2 Release from Living Cells.

    PubMed

    Li, Zhenzhen; Xin, Yanmei; Wu, Wenlong; Fu, Baihe; Zhang, Zhonghai

    2016-08-01

    In this work, we clearly demonstrate for the first time the use of transition-metal phosphides to set up a new cathodic analysis platform for sensitive and selective electrochemical nonenzymatic detection of H2O2. With the help of a facile topotactic conversion method, the noble metal-free electrocatalyst of copper(I) phosphide nanowires on three-dimensional porous copper foam (Cu3P NWs/CF) is fabricated with electrochemical anodized Cu(OH)2 NWs as precursor. The Cu3P NWs/CF-based sensor presents excellent electrocatalytic activity for H2O2 reduction with a detection limit of 2 nM, the lowest detection limit achieved by noble-metal free electrocatalyst, which guarantees the possibility of sensitive and reliable detection of H2O2 release from living tumorigenic cells, thus showing the potential application as a sensitive cancer cell detection probe. PMID:27377605

  5. Photoelectronic properties of zinc phosphide crystals, films, and heterojunctions. Quarterly progress report No. 11, October 1-December 31, 1981

    SciTech Connect

    Bube, R.H.

    1981-01-01

    Variations in crystal growth techniques are continuing with the goal of: (1) improving single crystal quality; and (2) producing variations in crystal properties by doping and post-growth variations of stoichiometry. DLTS measurements using Mg/Zn/sub 3/P/sub 2/ Schottky diodes gave information on three deep levels between 0.55 and 0.66 eV above the valence band in sublimation grown crystals with densities in the 10/sup 15/ to 10/sup 16/ cm/sup -3/ range, and a shallower level at 0.12 eV with a density of 10/sup 15/ cm/sup -3/ in an iodine-transport grown crystal. Investigation of surface properties of Zn/sub 3/P/sub 2/ indicate that a Br-MeOH etch leaves a Zn-rich surface for both sublimation-grown and iodine-transport grown crystals. Detailed measurements were made on thick Mg/Zn/sub 3/P/sub 2/ junctions on sublimation-grown and iodine-transport grown crystals of log J-V characteristics as a function of temperature, for crystal substrates as etched, and after heat treatment in hydrogen at several temperatures. A systematic change in the junction transport mechanism from tunneling at heat-treatment temperatures less than 300/sup 0/C to recombination/generation for heat-treatment temperatures between 300 and 500/sup 0/C was found for Zn/sub 3/P/sub 2/ crystals grown by both growth techniques. A simple model involving a depletion of free carrier density near the surface as a result of heat treatment in hydrogen is proposed. Thin film Mg/Zn/sub 3/P/sub 2/ cells showed log J-V characteristics that are strongly light dependent, indicating an increase in tunneling with illumination. Evidence that the barrier height of the Mg/Zn/sub 3/P/sub 2/ junction is actually of the order of 0.9 to 1.0 eV was obtained. Attempts to prepare ITO/Zn/sub 3/P/sub 2/ junctions by electron-beam evaporation of ITO on single crystal substrates yielded poor diodes and negligible photovoltaic behavior.

  6. Development of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    1972-01-01

    Solar cells and mesa diodes were fabricated by the implantation of zinc or beryllium ions into n-type gallium arsenide. Annealing temperatures above 750 C (zinc) or 650 C (beryllium) were found to produce 50% to 100% activation of the implanted ions. Junction depths of about 0.4 micron were produced by 600 keV zinc implants or 70 keV beryllium implants. P-layer sheet resistance was about 150 ohms for 2 x 10 to the 15th power cm/2 zinc or 1 x 10 to the 15th power cm/2 beryllium implants. This is sufficiently low for efficient solar cell fabrication. Contacting procedures were improved to yield reproducibly adherent, low resistance front and back contacts.

  7. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L.

    2015-02-01

    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  8. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    SciTech Connect

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L.

    2015-02-09

    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  9. Improvements in InP solar cells

    NASA Technical Reports Server (NTRS)

    Keavney, Christopher; Vernon, Stanley M.; Haven, Victor E.

    1988-01-01

    Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.

  10. Zinc

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc was recognized as an essential trace metal for humans during the studies of Iranian adolescent dwarfs in the early 1960s. Zinc metal existing as Zn2+ is a strong electron acceptor in biological systems without risks of oxidant damage to cells. Zn2+ functions in the structure of proteins and is ...

  11. Solar Photovoltaic Cells.

    ERIC Educational Resources Information Center

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  12. Effect of resveratrol and zinc on intracellular zinc status in normal human prostate epithelial cells

    Technology Transfer Automated Retrieval System (TEKTRAN)

    To evaluate the influence of resveratrol on cellular zinc status, normal human prostate epithelial (NHPrE) cells were treated with 6 levels of resveratrol (0, 0.5, 1, 2.5, 5 and 10 microM) and 4 levels of zinc [0, 4, 16, and 32 microM for zinc-deficient (ZD), zinc-normal (ZN), zinc-adequate (ZA), an...

  13. Influence of DNA-methylation on zinc homeostasis in myeloid cells: Regulation of zinc transporters and zinc binding proteins.

    PubMed

    Kessels, Jana Elena; Wessels, Inga; Haase, Hajo; Rink, Lothar; Uciechowski, Peter

    2016-09-01

    The distribution of intracellular zinc, predominantly regulated through zinc transporters and zinc binding proteins, is required to support an efficient immune response. Epigenetic mechanisms such as DNA methylation are involved in the expression of these genes. In demethylation experiments using 5-Aza-2'-deoxycytidine (AZA) increased intracellular (after 24 and 48h) and total cellular zinc levels (after 48h) were observed in the myeloid cell line HL-60. To uncover the mechanisms that cause the disturbed zinc homeostasis after DNA demethylation, the expression of human zinc transporters and zinc binding proteins were investigated. Real time PCR analyses of 14 ZIP (solute-linked carrier (SLC) SLC39A; Zrt/IRT-like protein), and 9 ZnT (SLC30A) zinc transporters revealed significantly enhanced mRNA expression of the zinc importer ZIP1 after AZA treatment. Because ZIP1 protein was also enhanced after AZA treatment, ZIP1 up-regulation might be the mediator of enhanced intracellular zinc levels. The mRNA expression of ZIP14 was decreased, whereas zinc exporter ZnT3 mRNA was also significantly increased; which might be a cellular reaction to compensate elevated zinc levels. An enhanced but not significant chromatin accessibility of ZIP1 promoter region I was detected by chromatin accessibility by real-time PCR (CHART) assays after demethylation. Additionally, DNA demethylation resulted in increased mRNA accumulation of zinc binding proteins metallothionein (MT) and S100A8/S100A9 after 48h. MT mRNA was significantly enhanced after 24h of AZA treatment also suggesting a reaction of the cell to restore zinc homeostasis. These data indicate that DNA methylation is an important epigenetic mechanism affecting zinc binding proteins and transporters, and, therefore, regulating zinc homeostasis in myeloid cells. PMID:26905204

  14. Optoelectronic characterization of wide-bandgap (AgCu)(InGa)Se 2 thin-film polycrystalline solar cells including the role of the intrinsic zinc oxide layer

    NASA Astrophysics Data System (ADS)

    Obahiagbon, Uwadiae

    Experiments and simulations were conducted to vary the thickness and the sheet resistance of the high resistance (HR) ZnO layer in polycrystalline thin film (AgCu)(GaIn)Se2 (ACIGS) solar cells. The effect of varying these parameters on the electric field distribution, depletion width and hence capacitance were studied by SCAPS simulation. Devices were then fabricated and characterized by a number of optoelectronic techniques. Thin film CIGS has received a lot of attention, for its use as an absorber layer for thin film solar cells. However, the addition of Silver (Ag) to the CIGS alloy system increases the band gap as indicated from optical transmission measurements and thus higher open circuit voltage (Voc) could be obtained. Furthermore, addition of Ag lowers the melting temperature of the alloy and it is expected that this lowers the defect densities in the absorber and thus leads to higher performance. Transient photocapacitance analysis on ACIGS devices shows sharper band edge indicating lower disorder than CIGS. Presently there is a lack of fundamental knowledge relating film characteristics to device properties and performance. This is due to the fact that some features in the present solar cell structure have been optimized empirically. The goal of this research effort was to develop a fundamental and detailed understanding of the device operation as well as the loss mechanism(s) limiting these devices. Recombination mechanisms in finished ACIGS solar cell devices was studied using advanced admittance techniques (AS, DLCP, CV) to identify electronically active defect state(s) and to study their impact on electronic properties and device performance. Analysis of various optoelectronic measurements of ACIGS solar cells provided useful feedback regarding the impact on device performance of the HR ZnO layer. It was found that thickness between 10-100 nm had negligible impact on performance but reducing the thickness to 0 nm resulted in huge variability in all

  15. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

    2015-09-08

    A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

  16. Fullerene derivative-doped zinc oxide nanofilm as the cathode of inverted polymer solar cells with low-bandgap polymer (PTB7-Th) for high performance.

    PubMed

    Liao, Sih-Hao; Jhuo, Hong-Jyun; Cheng, Yu-Shan; Chen, Show-An

    2013-09-14

    Modification of a ZnO cathode by doping it with a hydroxyl-containing derivative - giving a ZnO-C60 cathode - provides a fullerene-derivative-rich surface and enhanced electron conduction. Inverted polymer solar cells with the ZnO-C60 cathode display markedly improved power conversion efficiency compared to those with a pristine ZnO cathode, especially when the active layer includes the low-bandgap polymer PTB7-Th. PMID:23939927

  17. Enhanced EOS photovoltaic power system capability with InP solar cells

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Weinberg, Irving; Flood, Dennis J.

    1991-01-01

    The Earth Observing System (EOS), which is part of the International Mission to Planet Earth, is NASA's main contribution to the Global Change Research Program which opens a new era in international cooperation to study the Earth's environment. Five large platforms are to be launched into polar orbit, two by NASA, two by ESA, and one by the Japanese. In such an orbit the radiation resistance of indium phosphide solar cells combined with the potential of utilizing five micron cell structures yields an increase of 10 percent in the payload capability. If further combined with the advanced photovoltaic solar array the payload savings approaches 12 percent.

  18. Solar cell device

    SciTech Connect

    Nishiura, M.; Haruki, H.; Miyagi, M.; Sakai, H.; Uchida, Y.

    1984-06-26

    A solar cell array is equipped with serially or parallel connected reverse polarity diodes formed simultaneously with the array. The diodes are constituted by one or more solar cells of the array which may be shaded to prevent photoelectric conversion, and which are electrically connected in reverse polarity with respect to the remaining cells.

  19. Solar cell encapsulation

    NASA Technical Reports Server (NTRS)

    Gupta, Amitava (Inventor); Ingham, John D. (Inventor); Yavrouian, Andre H. (Inventor)

    1983-01-01

    A polymer syrup for encapsulating solar cell assemblies. The syrup includes uncrosslinked poly(n-butyl)acrylate dissolved in n-butyl acrylate monomer. Preparation of the poly(n-butyl)acrylate and preparation of the polymer syrup is disclosed. Methods for applying the polymer syrup to solar cell assemblies as an encapsulating pottant are described. Also included is a method for solar cell construction utilizing the polymer syrup as a dual purpose adhesive and encapsulating material.

  20. Heterojunction solar cell

    DOEpatents

    Olson, Jerry M.

    1994-01-01

    A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

  1. Heterojunction solar cell

    DOEpatents

    Olson, J.M.

    1994-08-30

    A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

  2. Fatal aluminium phosphide poisoning

    PubMed Central

    Mittal, Sachin; Rani, Yashoda

    2015-01-01

    Aluminium phosphide (AlP) is a cheap solid fumigant and a highly toxic pesticide which is commonly used for grain preservation. AlP has currently aroused interest with a rising number of cases in the past four decades due to increased use for agricultural and non-agricultural purposes. Its easy availability in the markets has increased also its misuse for committing suicide. Phosphine inhibits cellular oxygen utilization and can induce lipid peroxidation. Poisoning with AlP has often occurred in attempts to commit suicide, and that more often in adults than in teenagers. This is a case of suicidal consumption of aluminium phosphide by a 32-year-old young medical anesthetist. Toxicological analyses detected aluminium phosphide. We believe that free access of celphos tablets in grain markets should be prohibited by law. PMID:27486362

  3. Efficient water reduction with gallium phosphide nanowires

    PubMed Central

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-01-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. PMID:26183949

  4. Efficient water reduction with gallium phosphide nanowires

    NASA Astrophysics Data System (ADS)

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-07-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires.

  5. Solar cell shingle

    NASA Technical Reports Server (NTRS)

    Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G. (Inventor)

    1977-01-01

    A solar cell shingle was made of an array of solar cells on a lower portion of a substantially rectangular shingle substrate made of fiberglass cloth or the like. The solar cells may be encapsulated in flourinated ethylene propylene or some other weatherproof translucent or transparent encapsulant to form a combined electrical module and a roof shingle. The interconnected solar cells were connected to connectors at the edge of the substrate through a connection to a common electrical bus or busses. An overlap area was arranged to receive the overlap of a cooperating similar shingle so that the cell portion of the cooperating shingle may overlie the overlap area of the roof shingle. Accordingly, the same shingle serves the double function of an ordinary roof shingle which may be applied in the usual way and an array of cooperating solar cells from which electrical energy may be collected.

  6. Porphyrin-sensitized solar cells.

    PubMed

    Li, Lu-Lin; Diau, Eric Wei-Guang

    2013-01-01

    Nature has chosen chlorophylls in plants as antennae to harvest light for the conversion of solar energy in complicated photosynthetic processes. Inspired by natural photosynthesis, scientists utilized artificial chlorophylls - the porphyrins - as efficient centres to harvest light for solar cells sensitized with a porphyrin (PSSC). After the first example appeared in 1993 of a porphyrin of type copper chlorophyll as a photosensitizer for PSSC that achieved a power conversion efficiency of 2.6%, no significant advance of PSSC was reported until 2005; beta-linked zinc porphyrins were then reported to show promising device performances with a benchmark efficiency of 7.1% reported in 2007. Meso-linked zinc porphyrin sensitizers in the first series with a push-pull framework appeared in 2009; the best cell performed comparably to that of a N3-based device, and a benchmark 11% was reported for a porphyrin sensitizer of this type in 2010. With a structural design involving long alkoxyl chains to envelop the porphyrin core to suppress the dye aggregation for a push-pull zinc porphyrin, the PSSC achieved a record 12.3% in 2011 with co-sensitization of an organic dye and a cobalt-based electrolyte. The best PSSC system exhibited a panchromatic feature for light harvesting covering the visible spectral region to 700 nm, giving opportunities to many other porphyrins, such as fused and dimeric porphyrins, with near-infrared absorption spectral features, together with the approach of molecular co-sensitization, to enhance the device performance of PSSC. According to this historical trend for the development of prospective porphyrin sensitizers used in PSSC, we review systematically the progress of porphyrins of varied kinds, and their derivatives, applied in PSSC with a focus on reports during 2007-2012 from the point of view of molecular design correlated with photovoltaic performance. PMID:23023240

  7. 3. Right side of Zinc Plant, from Cell Room midpoint ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. Right side of Zinc Plant, from Cell Room midpoint to Plant Office (foreground) and #5 Roaster and Concentrate Handling (background). View is to the east. - Sullivan Electrolytic Zinc Plant, Government Gulch, Kellogg, Shoshone County, ID

  8. Morphology control of zinc regeneration for zinc-air fuel cell and battery

    NASA Astrophysics Data System (ADS)

    Wang, Keliang; Pei, Pucheng; Ma, Ze; Xu, Huachi; Li, Pengcheng; Wang, Xizhong

    2014-12-01

    Morphology control is crucial both for zinc-air batteries and for zinc-air fuel cells during zinc regeneration. Zinc dendrite should be avoided in zinc-air batteries and zinc pellets are yearned to be formed for zinc-air fuel cells. This paper is mainly to analyze the mechanism of shape change and to control the zinc morphology during charge. A numerical three-dimensional model for zinc regeneration is established with COMSOL software on the basis of ionic transport theory and electrode reaction electrochemistry, and some experiments of zinc regeneration are carried out. The deposition process is qualitatively analyzed by the kinetics Monte Carlo method to study the morphological change from the electrocrystallization point of view. Morphological evolution of deposited zinc under different conditions of direct currents and pulse currents is also investigated by simulation. The simulation shows that parametric variables of the flowing electrolyte, the surface roughness and the structure of the electrode, the charging current and mode affect morphological evolution. The uniform morphology of deposited zinc is attained at low current, pulsating current or hydrodynamic electrolyte, and granular morphology is obtained by means of an electrode of discrete columnar structure in combination with high current and flowing electrolyte.

  9. AC solar cell

    SciTech Connect

    Schutten, H.P.; Benjamin, J.A.; Lade, R.W.

    1986-03-18

    An AC solar cell is described comprising: a pair of PN junction type solar cells connected in antiparallel between a pair of main terminals; and means for electrically directing light alternatingly without mechanical movement on the PN junctions to generate an alternating potential across the main terminals.

  10. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    SciTech Connect

    Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B.; Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J.; Lozac'h, M.; Ueda, S.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Baer, M.

    2013-07-08

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  11. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    NASA Astrophysics Data System (ADS)

    Gerlach, D.; Wilks, R. G.; Wippler, D.; Wimmer, M.; Lozac'h, M.; Félix, R.; Mück, A.; Meier, M.; Ueda, S.; Yoshikawa, H.; Gorgoi, M.; Lips, K.; Rech, B.; Sumiya, M.; Hüpkes, J.; Kobayashi, K.; Bär, M.

    2013-07-01

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon "window layer" (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 ± 0.27) eV and (-3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  12. Heterostructure solar cells

    NASA Technical Reports Server (NTRS)

    Chang, K. I.; Yeh, Y. C. M.; Iles, P. A.; Morris, R. K.

    1987-01-01

    The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases the substrate was thinned to reduce overall cell weight with good ruggedness. The conversion efficiency of 2 by 2 cm cells under AMO reached 17.1 percent with a cell thickness of 6 mils. The work described forms the basis for future cascade cell structures, where similar interconnecting problems between the top cell and the bottom cell must be solved. Applications of the GaAs/Ge solar cell in space and the expected payoffs are discussed.

  13. High-efficiency solar cell and method for fabrication

    DOEpatents

    Hou, H.Q.; Reinhardt, K.C.

    1999-08-31

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

  14. High-efficiency solar cell and method for fabrication

    DOEpatents

    Hou, Hong Q.; Reinhardt, Kitt C.

    1999-01-01

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

  15. NREL Scientists Spurred the Success of Multijunction Solar Cells (Fact Sheet)

    SciTech Connect

    Not Available

    2012-09-01

    Before 1984, many scientists believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. One researcher at the Solar Energy Research Institute (SERI) thought differently. His name was Jerry Olson, and his innovative thinking changed solar history. Olson identified a material combination that allowed the multijunction cell to flourish. It is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic (CPV) products.

  16. Electrochemical Characterization of InP and GaAs Based Structures for Space Solar Cell Applications.

    NASA Technical Reports Server (NTRS)

    Faur, Maria; Faur, Mircea; Jenkins, Philip P.; Goradia, Manju; Wilt, David M.

    1994-01-01

    In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on Indium Phosphide and Gallium Arsenide, using a newly developed electrolyte based on Hydrogen Flouride, Acetic Acid, Phosphoric Acid, 1-phenyl-2-propanamine and Ammonia Diflouride. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.

  17. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Tada, H. Y.; Carter, J. R., Jr.

    1977-01-01

    Solar cell theory cells are manufactured, and how they are modeled mathematically is reviewed. The interaction of energetic charged particle radiation with solar cells is discussed in detail and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Finally, an extensive body of data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence is presented.

  18. High-efficiency cadmium and zinc-telluride-based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1991

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  19. Simulation of a thin film solar cell based on copper zinc tin sulfo-selenide Cu2ZnSn(S,Se)4

    NASA Astrophysics Data System (ADS)

    Benmir, Abdelkader; Aida, Mohamed Salah

    2016-03-01

    The aim of this work is to do a simulation of a Cu2ZnSn(S,Se)4 thin film photovoltaic solar cell to link the characteristics of this cell with the materials parameters in order to improve its performances. It is found that, the cell performances are almost invariables while the thickness of the buffer layer is equal to or less than the space charge zone width of its side. But, as soon as it exceeds this width, a slight reduction in these performances is observed. However, the absorber layer thickness must have a value at least equal to the space charge region width of its side and at most equal to the sum of this space charge region width and the electrons diffusion length. An optimum value of the absorber band gap around 1.5 eV is obtained. This value is the compromise between the decreases of the short circuit current density and the increases of the open circuit voltage with the increases of the gap. This leads to a maximum cell efficiency of 12.1%.

  20. Development and interface/surface characterization of titanium dioxide and zinc oxide electron-collection interlayer materials for organic solar cells

    NASA Astrophysics Data System (ADS)

    Ou, Kai-Lin

    My research on metal oxide electron-harvesting interlayers for organic solar cells was focused as three interrelated projects in this dissertation: i) development of a chemical vapor deposition (CVD) system for TiO 2 film; ii) an electrochemical methodology to evaluate ZnO thin film charge (hole) blocking ability; iii) the effects of plasma modifications on sol-gel ZnO and sol-gel ZnO/organic (active layer) interfaces. In i), we showed that nanoscale (12-36 nm) CVD TiO2 film deposited at 210 oC obtains properties of conformal growth, superior hole blocking ability, stoichiometric metal to oxide ratio. The introduction of CVD TiO2 film as an electron transport layer into organic solar cell significantly improves its J-V characteristics. The optimum TiO2 thickness in the OPV device applications was found to be 24 nm with a high fill factor (0.58) and power conversion efficiency (3.7%) obtained. In ii), simple electrochemical methods, i.e., cyclic voltammetry, impedance spectroscopy have been used to evaluate sol-gel derived ZnO (sg-ZnO) and sputtered ZnO (sp-ZnO) porosity and pinhole density. We showed that sg-ZnO with high surface area porous structure allows the probe molecules and poly-thiophene (P3HT) thin layer to direct contact ITO substrate, whereas sp-ZnO with dense structural property efficiently eliminates these electroactivities. This electrochemical property difference also directly reflects on the device shunt resistance (Rp), where we observed larger leakage current for the devices using sg-ZnO than that of devices using sp-ZnO. In iii), we demonstrated low power radio frequency (RF) O2 and Ar plasma treatments have significant impacts on sg-ZnO near-surface chemical compositions, which in turn influence the onset potential of sg-ZnO electron injection and its energetic alignment with electron acceptors, e.g., C60. Using UPS, we found the presence of localized mid-gap states near the Fermi-level of sg-ZnO, which induces the most favorable band bending

  1. Investigation of surface phase formation during tin-rich growth of Copper2ZincTinSulfer4 polycrystlalline thin films for solar cells

    NASA Astrophysics Data System (ADS)

    Bolke, Joseph Glenn

    Cu2ZnSnS4 (CZTS) is a semiconductor material made of nontoxic, earth abundant elements, making it a promising topic of research for absorber layers in thin film solar cells. We observed that rapid thermal annealing of tin (Sn)-rich co-sputtered CZTS films resulted in crystalline, hexagonal platelets of tin-disulfide (SnS2) 5-30 µm long at the surface of the film. In this work, the formation mechanisms of these surface crystallites and their implications for CZTS absorber layer processing were investigated. The formation and decomposition of these platelets were studied by observing the changes in their structural, morphological, compositional, and vibrational properties accompanying the imposition of lateral temperature gradients as well as different annealing atmospheres. The homogeneous co-sputtered films were annealed in a graphite boat in a quartz reactor using a base heater and halogen lamp. Interrupting annealings to examine stages of crystal formation showed at around 400 °C SnS2 began to form on the surface of films. Near the edges of the film, where temperatures were found to be higher, crystals melted into an amorphous unknown tin-sulfide phase. Diffusion of species from the film into the base of the crystals formed long CZTS grains of which the amorphous phase left behind as it coalesced. Annealing without sulfur (S) increased Sn and S losses from the film and increased the number of crystals nucleated on the surface of the film. For solar cell device applications of CZTS thin films, removal of these SnS2 surface crystallites is necessary; thus wet chemical and thermal decomposition etching techniques were studied. Wet etching attempts with KCN and NH4OH solutions did little to etch crystals. HCl solution damaged the CZTS film as much as the crystals and therefore was also unsuitable. Thermal etching by evacuating the chamber near the end of annealing transformed the SnS2 crystals into a grainy, S-poor Sn phase via the decomposition of SnS2 by removing

  2. Solar cell activation system

    SciTech Connect

    Apelian, L.

    1983-07-05

    A system for activating solar cells involves the use of phosphorescent paint, the light from which is amplified by a thin magnifying lens and used to activate solar cells. In a typical system, a member painted with phosphorescent paint is mounted adjacent a thin magnifying lens which focuses the light on a predetermined array of sensitive cells such as selenium, cadmium or silicon, mounted on a plastic board. A one-sided mirror is mounted adjacent the cells to reflect the light back onto said cells for purposes of further intensification. The cells may be coupled to rechargeable batteries or used to directly power a small radio or watch.

  3. Thin boron phosphide coating as a corrosion-resistant layer

    DOEpatents

    Not Available

    1982-08-25

    A surface prone to corrosion in corrosive environments is rendered anticorrosive by CVD growing a thin continuous film, e.g., having no detectable pinholes, thereon, of boron phosphide. In one embodiment, the film is semiconductive. In another aspect, the invention is an improved photoanode, and/or photoelectrochemical cell with a photoanode having a thin film of boron phosphide thereon rendering it anticorrosive, and providing it with unexpectedly improved photoresponsive properties.

  4. Dye Sensitized Solar Cells

    PubMed Central

    Wei, Di

    2010-01-01

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed. PMID:20480003

  5. Dye sensitized solar cells.

    PubMed

    Wei, Di

    2010-01-01

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO(2), ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed. PMID:20480003

  6. Solar cell radiation handbook

    SciTech Connect

    Tada, H.Y.; Carter, J.R. Jr.; Anspaugh, B.E.

    1982-11-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  7. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  8. Rechargeable zinc cell with alkaline electrolyte which inhibits shape change in zinc electrode

    DOEpatents

    Adler, Thomas C.; McLarnon, Frank R.; Cairns, Elton J.

    1994-01-01

    An improved rechargeable zinc cell is described comprising a zinc electrode and another electrode such as, for example, a nickel-containing electrode, and having an electrolyte containing KOH and a combination of KF and K.sub.2 CO.sub.3 salts which inhibits shape change in the zinc electrode, i.e., the zinc electrode exhibits low shape change, resulting in an improved capacity retention of the cell over an number of charge-discharge cycles, while still maintaining high discharge rate characteristics.

  9. Rechargeable zinc cell with alkaline electrolyte which inhibits shape change in zinc electrode

    DOEpatents

    Adler, T.C.; McLarnon, F.R.; Cairns, E.J.

    1994-04-12

    An improved rechargeable zinc cell is described comprising a zinc electrode and another electrode such as, for example, a nickel-containing electrode, and having an electrolyte containing KOH and a combination of KF and K[sub 2]CO[sub 3] salts which inhibits shape change in the zinc electrode, i.e., the zinc electrode exhibits low shape change, resulting in an improved capacity retention of the cell over an number of charge-discharge cycles, while still maintaining high discharge rate characteristics. 8 figures.

  10. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  11. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

    2014-05-20

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  12. Solar cell array interconnects

    DOEpatents

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  13. Solar cell array interconnects

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    1995-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  14. Nanocrystal Solar Cells

    SciTech Connect

    Gur, Ilan

    2006-12-15

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  15. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  16. Lightweight solar cell

    SciTech Connect

    Hotaling, S.P.

    1993-06-22

    A lightweight solar cell is described comprising: (a) an LD aerogel substrate having a density of between 10-1,000 mg/cc, the surface of the substrate being polished (b) a dielectric planarization layer being applied to the polished surface, and (c) at least one layer of PV material deposited thereon. The solar cell having a plurality of PV layers deposited on the planarization layer.

  17. Photoelectrochemical Solar Cells.

    ERIC Educational Resources Information Center

    McDevitt, John T.

    1984-01-01

    This introduction to photoelectrochemical (PEC) cells reviews topics pertaining to solar energy conversion and demonstrates the ease with which a working PEC cell can be prepared with n-type silicon as the photoanode and a platinum counter electrode (both immersed in ethanolic ferrocene/ferricenium solutions). Experiments using the cell are…

  18. Zinc air refuelable battery: alternative zinc fuel morphologies and cell behavior

    SciTech Connect

    Cooper, J.F.; Krueger, R.

    1997-01-01

    Multicell zinc/air batteries have been tested previously in the laboratory and as part of the propulsion system of an electric bus; cut zinc wire was used as the anode material. This battery is refueled by a hydraulic transport of 0.5-1 mm zinc particles into hoppers above each cell. We report an investigation concerning alternative zinc fuel morphologies, and energy losses associated with refueling and with overnight or prolonged standby. Three types of fuel pellets were fabricated, tested and compared with results for cut wire: spheres produced in a fluidized bed electrolysis cell; elongated particles produced by gas-atomization; and pellets produced by chopping 1 mm porous plates made of compacted zinc fines. Relative sizes of the particles and cell gap dimensions are critical. All three types transported within the cell 1553 and showed acceptable discharge characteristics, but a fluidized bed approach appears especially attractive for owner/user recovery operations.

  19. Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

    SciTech Connect

    Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen

    2011-11-15

    In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

  20. Sliver solar cells

    NASA Astrophysics Data System (ADS)

    Franklin, Evan; Blakers, Andrew; Everett, Vernie; Weber, Klaus

    2007-12-01

    Sliver solar cells are thin, mono-crystalline silicon solar cells, fabricated using micro-machining techniques combined with standard solar cell fabrication technology. Sliver solar modules can be efficient, low cost, bifacial, transparent, flexible, shadow-tolerant, and lightweight. Sliver modules require only 5 to 10% of the pure silicon and less than 5% of the wafer starts per MW p of factory output when compared with conventional photovoltaic modules. At ANU, we have produced 20% efficient Sliver solar cells using a robust, optimised cell fabrication process described in this paper. We have devised a rapid, reliable and simple method for extracting Sliver cells from a Sliver wafer, and methods for assembling modularised Sliver cell sub-modules. The method for forming these Sliver sub-modules, along with a low-cost method for rapidly forming reliable electrical interconnections, are presented. Using the sub-module approach, we describe low-cost methods for assembling and encapsulating Sliver cells into a range of module designs.

  1. Screening of solar cells

    NASA Technical Reports Server (NTRS)

    Appelbaum, J.; Chait, A.; Thompson, D. A.

    1993-01-01

    Because solar cells in a production batch are not identical, screening is performed to obtain similar cells for aggregation into arrays. A common technique for screening is based on a single operating point of the I-V characteristic of the cell, usually the maximum power point. As a result, inferior cell matching may occur at the actual operating points. Screening solar cells based on the entire I-V characteristic will inherently result in more similar cells in the array. An array consisting of more similar cells is likely to have better overall characteristics and more predictable performance. Solar cell screening methods and cell ranking are discussed. The concept of a mean cell is defined as a cell 'best' representing all the cells in the production batch. The screening and ranking of all cells are performed with respect to the mean cell. The comparative results of different screening methods are illustrated on a batch of 50 silicon cells of the Space Station Freedom.

  2. Screening of solar cells

    SciTech Connect

    Appelbaum, J.; Chait, A.; Thompson, D.A.

    1993-07-01

    Because solar cells in a production batch are not identical, screening is performed to obtain similar cells for aggregation into arrays. A common technique for screening is based on a single operating point of the I-V characteristic of the cell, usually the maximum power point. As a result, inferior cell matching may occur at the actual operating points. Screening solar cells based on the entire I-V characteristic will inherently result in more similar cells in the array. An array consisting of more similar cells is likely to have better overall characteristics and more predictable performance. Solar cell screening methods and cell ranking are discussed. The concept of a mean cell is defined as a cell 'best' representing all the cells in the production batch. The screening and ranking of all cells are performed with respect to the mean cell. The comparative results of different screening methods are illustrated on a batch of 50 silicon cells of the Space Station Freedom.

  3. Spray deposited copper zinc tin sulphide (Cu2ZnSnS4) film as a counter electrode in dye sensitized solar cells.

    PubMed

    Swami, Sanjay Kumar; Chaturvedi, Neha; Kumar, Anuj; Chander, Nikhil; Dutta, Viresh; Kumar, D Kishore; Ivaturi, A; Senthilarasu, S; Upadhyaya, Hari M

    2014-11-21

    Stoichiometric thin films of Cu2ZnSnS4 (CZTS) were deposited by the spray technique on a FTO coated glass substrate, with post-annealing in a H2S environment to improve the film properties. CZTS films were used as a counter electrode (CE) in Dye-Sensitized Solar Cells (DSCs) with N719 dye and an iodine electrolyte. The DSC of 0.25 cm(2) area using a CE of CZTS film annealed in a H2S environment under AM 1.5G illumination (100 mW cm(-2)) exhibited a short circuit current density (JSC) = 18.63 mA cm(-2), an open circuit voltage (VOC) = 0.65 V and a fill factor (FF) = 0.53, resulting in an overall power conversion efficiency (PCE) = 6.4%. While the DSC using as deposited CZTS film as a CE showed the PCE = 3.7% with JSC = 13.38 mA cm(-2), VOC = 0.57 V and FF = 0.48. Thus, the spray deposited CZTS films can play an important role as a CE in the large area DSC fabrication. PMID:25286339

  4. A novel triple-layer zinc oxide/carbon nanotube architecture for dye-sensitized solar cells with excellent power conversion efficiency

    NASA Astrophysics Data System (ADS)

    Hu, Jing; Xie, Yahong; Bai, Te; Zhang, Chunyang; Wang, Jide

    2015-07-01

    A novel triple-layer photoanode architecture, composed of ZnO and ZnO/CNT nanostructure semiconductor films for dye-sensitized solar cell with excellent power conversion efficiency is fabricated by a simple strategy. A convenient and effective method is applied to disperse the multiwalled carbon nanotube (MWCNT). The structure, morphology and light absorption of the novel hybrid photoanode are characterized by X-ray diffraction, scanning electron microscopy, and UV-vis absorption spectroscopy analyze. Results indicate that the ZnO has a typical wurtzite structure and the MWCNTs are homogeneously dispersed in ZnO. Current-voltage curves demonstrate CNT-0.5 with 0.05wt% of carbon nanotube (CNT) is the most suitable in improving the performance of DSSCs, and the power conversion efficiency of ZnO/CNT-0.5-0.05wt% is 6.25%, which is 35.57% higher than those without CNTs (4.61%). Finally, electrochemical impedance spectra confirms that the abundant dyes absorption by the ZnO layer and large numbers of direct pathway for electron transport provided by the MWCNTs are attributed to the high efficiency of this new DSSC. This result is remarkable and provides a novel triple-layer ZnO/CNT architecture in improving the performance of DSSCs.

  5. Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function

    NASA Astrophysics Data System (ADS)

    Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N.

    2013-07-01

    Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

  6. Broad spectrum solar cell

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao; Schaff, William J.

    2007-05-15

    An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

  7. Parameterization of solar cells

    NASA Astrophysics Data System (ADS)

    Appelbaum, J.; Chait, A.; Thompson, D.

    1992-10-01

    The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

  8. Parameterization of solar cells

    NASA Technical Reports Server (NTRS)

    Appelbaum, J.; Chait, A.; Thompson, D.

    1992-01-01

    The aggregation (sorting) of the individual solar cells into an array is commonly based on a single operating point on the current-voltage (I-V) characteristic curve. An alternative approach for cell performance prediction and cell screening is provided by modeling the cell using an equivalent electrical circuit, in which the parameters involved are related to the physical phenomena in the device. These analytical models may be represented by a double exponential I-V characteristic with seven parameters, by a double exponential model with five parameters, or by a single exponential equation with four or five parameters. In this article we address issues concerning methodologies for the determination of solar cell parameters based on measured data points of the I-V characteristic, and introduce a procedure for screening of solar cells for arrays. We show that common curve fitting techniques, e.g., least squares, may produce many combinations of parameter values while maintaining a good fit between the fitted and measured I-V characteristics of the cell. Therefore, techniques relying on curve fitting criteria alone cannot be directly used for cell parameterization. We propose a consistent procedure which takes into account the entire set of parameter values for a batch of cells. This procedure is based on a definition of a mean cell representing the batch, and takes into account the relative contribution of each parameter to the overall goodness of fit. The procedure is demonstrated on a batch of 50 silicon cells for Space Station Freedom.

  9. Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1993-01-01

    Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

  10. Solar cell radiation handbook

    NASA Technical Reports Server (NTRS)

    Carter, J. R., Jr.; Tada, H. Y.

    1973-01-01

    A method is presented for predicting the degradation of a solar array in a space radiation environment. Solar cell technology which emphasizes the cell parameters that degrade in a radiation environment, is discussed along with the experimental techniques used in the evaluation of radiation effects. Other topics discussed include: theoretical aspects of radiation damage, methods for developing relative damage coefficients, nature of the space radiation environment, method of calculating equivalent fluence from electron and proton energy spectrums and relative damage coefficients, and comparison of flight data with estimated degradation.

  11. Flexible Solar Cells

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Solar cell "modules" are plastic strips coated with thin films of photovoltaic silicon that collect solar energy for instant conversion into electricity. Lasers divide the thin film coating into smaller cells to build up voltage. Developed by Iowa Thin Film Technologies under NASA and DOE grants, the modules are used as electrical supply for advertising displays, battery rechargers for recreational vehicles, and to power model airplanes. The company is planning other applications both in consumer goods and as a power source in underdeveloped countries.

  12. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  13. Making Ultrathin Solar Cells

    NASA Technical Reports Server (NTRS)

    Cogan, George W.; Christel, Lee A.; Merchant, J. Thomas; Gibbons, James F.

    1991-01-01

    Process produces extremely thin silicon solar cells - only 50 micrometers or less in thickness. Electrons and holes have less opportunity to recombine before collected at cell surfaces. Efficiency higher and because volume of silicon small, less chance of radiation damage in new cells. Initial steps carried out at normal thickness to reduce breakage and avoid extra cost of special handling. Cells then thinned mechanically and chemically. Final cell includes reflective layer on back surface. Layer bounces unabsorbed light back into bulk silicon so it absorbs and produces useful electrical output.

  14. TJ Solar Cell

    SciTech Connect

    Friedman, Daniel

    2009-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  15. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; DiNetta, Louis C.; DuganCavanagh, K.; Goetz, M. A.

    1996-01-01

    Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

  16. Surface passivation of InP solar cells with InAlAs layers

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

    1993-01-01

    The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

  17. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  18. NASA Facts, Solar Cells.

    ERIC Educational Resources Information Center

    National Aeronautics and Space Administration, Washington, DC.

    The design and function of solar cells as a source of electrical power for unmanned space vehicles is described in this pamphlet written for high school physical science students. The pamphlet is one of the NASA Facts Science Series (each of which consists of four pages) and is designed to fit in the standard size three-ring notebook. Review…

  19. [Zinc].

    PubMed

    Couinaud, C

    1984-10-01

    Zinc is indispensable for life from bacteria to man. As a trace element it is included in numerous enzymes or serves as their activator (more than 80 zinc metallo-enzymes). It is necessary for nucleic acid and protein synthesis, the formation of sulphated molecules (insulin, growth hormone, keratin, immunoglobulins), and the functioning of carbonic anhydrase, aldolases, many dehydrogenases (including alcohol-dehydrogenase, retinal reductase indispensable for retinal rod function), alkaline phosphatase, T cells and superoxide dismutase. Its lack provokes distinctive signs: anorexia, diarrhea, taste, smell and vision disorders, skin lesions, delayed healing, growth retardation, delayed appearance of sexual characteristics, diminished resistance to infection, and it may be the cause of congenital malformations. Assay is now simplified by atomic absorption spectrophotometry in blood or hair. There is a latent lack prior to any disease because of the vices of modern eating habits, and this increases during stress, infections or tissue healing processes. Its lack is accentuated during long-term parenteral feeding or chronic gastrointestinal affections. Correction is as simple as it is innocuous, and zinc supplements should be given more routinely during surgical procedures. PMID:6210294

  20. Schottky barrier solar cell

    SciTech Connect

    Cohen, M.J.; Harris, J.S.

    1980-10-14

    A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SnBr/sub 0/ /sub 4/)/sub x/. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n+-type conductivity GaAs substrate.

  1. Thin, Lightweight Solar Cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  2. ZINC

    EPA Science Inventory

    This report summarizes the available information on zinc as it relates to its effects on man and his environment. Zinc is found in most soils, but some areas are deficient in it. Metallurgic operations contribute to zinc contamination in air, water and soil. Trace amounts of zinc...

  3. Modeling of high efficiency solar cells under laser pulse for power beaming applications

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1994-01-01

    Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

  4. Rechargeable zinc cell with alkaline electrolyte which inhibits shape change in zinc electrode

    DOEpatents

    Adler, Thomas C.; McLarnon, Frank R.; Cairns, Elton J.

    1995-01-01

    An improved rechargeable zinc cell is described comprising a zinc electrode and another electrode such as, for example, a nickel-containing electrode, and having an electrolyte containing one or more hydroxides having the formula M(OH), one or more fluorides having the formula MF, and one or more carbonates having the formula M.sub.2 CO.sub.3, where M is a metal selected from the group consisting of alkali metals. The electrolyte inhibits shape change in the zinc electrode, i.e., the zinc electrode exhibits low shape change, resulting in an improved capacity retention of the cell over an number of charge-discharge cycles, while still maintaining high discharge rate characteristics.

  5. EDITORIAL: Nanostructured solar cells Nanostructured solar cells

    NASA Astrophysics Data System (ADS)

    Greenham, Neil C.; Grätzel, Michael

    2008-10-01

    Conversion into electrical power of even a small fraction of the solar radiation incident on the Earth's surface has the potential to satisfy the world's energy demands without generating CO2 emissions. Current photovoltaic technology is not yet fulfilling this promise, largely due to the high cost of the electricity produced. Although the challenges of storage and distribution should not be underestimated, a major bottleneck lies in the photovoltaic devices themselves. Improving efficiency is part of the solution, but diminishing returns in that area mean that reducing the manufacturing cost is absolutely vital, whilst still retaining good efficiencies and device lifetimes. Solution-processible materials, e.g. organic molecules, conjugated polymers and semiconductor nanoparticles, offer new routes to the low-cost production of solar cells. The challenge here is that absorbing light in an organic material produces a coulombically bound exciton that requires dissociation at a donor-acceptor heterojunction. A thickness of at least 100 nm is required to absorb the incident light, but excitons only diffuse a few nanometres before decaying. The problem is therefore intrinsically at the nano-scale: we need composite devices with a large area of internal donor-acceptor interface, but where each carrier has a pathway to the respective electrode. Dye-sensitized and bulk heterojunction cells have nanostructures which approach this challenge in different ways, and leading research in this area is described in many of the articles in this special issue. This issue is not restricted to organic or dye-sensitized photovoltaics, since nanotechnology can also play an important role in devices based on more conventional inorganic materials. In these materials, the electronic properties can be controlled, tuned and in some cases completely changed by nanoscale confinement. Also, the techniques of nanoscience are the natural ones for investigating the localized states, particularly at

  6. Framework to predict optimal buffer layer pairing for thin film solar cell absorbers: A case study for tin sulfide/zinc oxysulfide

    SciTech Connect

    Mangan, Niall M.; Brandt, Riley E.; Steinmann, Vera; Jaramillo, R.; Poindexter, Jeremy R.; Chakraborty, Rupak; Buonassisi, Tonio; Yang, Chuanxi; Park, Helen Hejin; Zhao, Xizhu; Gordon, Roy G.

    2015-09-21

    An outstanding challenge in the development of novel functional materials for optoelectronic devices is identifying suitable charge-carrier contact layers. Herein, we simulate the photovoltaic device performance of various n-type contact material pairings with tin(II) sulfide (SnS), a p-type absorber. The performance of the contacting material, and resulting device efficiency, depend most strongly on two variables: conduction band offset between absorber and contact layer, and doping concentration within the contact layer. By generating a 2D contour plot of device efficiency as a function of these two variables, we create a performance-space plot for contacting layers on a given absorber material. For a simulated high-lifetime SnS absorber, this 2D performance-space illustrates two maxima, one local and one global. The local maximum occurs over a wide range of contact-layer doping concentrations (below 10{sup 16 }cm{sup −3}), but only a narrow range of conduction band offsets (0 to −0.1 eV), and is highly sensitive to interface recombination. This first maximum is ideal for early-stage absorber research because it is more robust to low bulk-minority-carrier lifetime and pinholes (shunts), enabling device efficiencies approaching half the Shockley-Queisser limit, greater than 16%. The global maximum is achieved with contact-layer doping concentrations greater than 10{sup 18 }cm{sup −3}, but for a wider range of band offsets (−0.1 to 0.2 eV), and is insensitive to interface recombination. This second maximum is ideal for high-quality films because it is more robust to interface recombination, enabling device efficiencies approaching the Shockley-Queisser limit, greater than 20%. Band offset measurements using X-ray photoelectron spectroscopy and carrier concentration approximated from resistivity measurements are used to characterize the zinc oxysulfide contacting layers in recent record-efficiency SnS devices. Simulations representative of these

  7. Very high efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Barnett, Allen; Kirkpatrick, Douglas; Honsberg, Christiana

    2006-08-01

    The Defense Advanced Research Projects Agency has initiated the Very High Efficiency Solar Cell (VHESC) program to address the critical need of the soldier for power in the field. Very High Efficiency Solar Cells for portable applications that operate at greater than 55 percent efficiency in the laboratory and 50 percent in production are being developed. We are integrating the optical design with the solar cell design, and have entered previously unoccupied design space that leads to a new architecture paradigm. An integrated team effort is now underway that requires us to invent, develop and transfer to production these new solar cells. Our approach is driven by proven quantitative models for the solar cell design, the optical design and the integration of these designs. We start with a very high performance crystalline silicon solar cell platform. Examples will be presented. Initial solar cell device results are shown for devices fabricated in geometries designed for this VHESC Program.

  8. Quantum Dot Solar Cells

    NASA Astrophysics Data System (ADS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-10-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  9. Nanowire Solar Cells

    NASA Astrophysics Data System (ADS)

    Garnett, Erik C.; Brongersma, Mark L.; Cui, Yi; McGehee, Michael D.

    2011-08-01

    The nanowire geometry provides potential advantages over planar wafer-based or thin-film solar cells in every step of the photoconversion process. These advantages include reduced reflection, extreme light trapping, improved band gap tuning, facile strain relaxation, and increased defect tolerance. These benefits are not expected to increase the maximum efficiency above standard limits; instead, they reduce the quantity and quality of material necessary to approach those limits, allowing for substantial cost reductions. Additionally, nanowires provide opportunities to fabricate complex single-crystalline semiconductor devices directly on low-cost substrates and electrodes such as aluminum foil, stainless steel, and conductive glass, addressing another major cost in current photovoltaic technology. This review describes nanowire solar cell synthesis and fabrication, important characterization techniques unique to nanowire systems, and advantages of the nanowire geometry.

  10. Quantum Dot Solar Cells

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.