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Sample records for 1-2 nm thick

  1. Atomic-resolution scanning transmission electron microscopy through 50-nm-thick silicon nitride membranes

    SciTech Connect

    Ramachandra, Ranjan; Jonge, Niels de; Demers, Hendrix

    2011-02-28

    Silicon nitride membranes can be used for windows of environmental chambers for in situ electron microscopy. We report that aberration corrected scanning transmission electron microscopy (STEM) achieved atomic resolution on gold nanoparticles placed on both sides of a 50-nm-thick silicon nitride membrane at 200 keV electron beam energy. Spatial frequencies of 1/1.2 A were visible for a beam semi-angle of 26.5 mrad. Imaging though a 100-nm-thick membrane was also tested. The achieved imaging contrast was evaluated using Monte Carlo simulations of the STEM imaging of a sample of with a representative geometry and composition.

  2. Magnetic hard disk overcoats in the 3-5 nm thickness range

    NASA Astrophysics Data System (ADS)

    Anoikin, E. V.; Yang, M. M.; Chao, J. L.; Russak, M. A.

    1999-04-01

    Protective properties of 3-5 nm thick carbon overcoat layers deposited on magnetic hard disks by ion beam deposition (IBD) and plasma-enhanced chemical vapor deposition (PECVD) were investigated. It is found that these overcoats are superior to the sputtered carbon films at thicknesses below 5 nm. Low-stiction performance of 3-nm-thick IBD films without any detectable wear was observed during 50 000 contact start-stop cycles at 55 °C and 10% relative humidity. Surface concentration of cobalt ions is reduced by as much as an order of magnitude as compared to the media with sputtered overcoats. Polarization resistivity values for IBD and PECVD overcoats are by an order of magnitude higher. The results show that thickness of protective carbon overcoats on magnetic hard disks can be reduced to 3-5 nm without compromising media reliability requirements. This reduction is critical for the continuing growth of storage density.

  3. Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

    SciTech Connect

    Kyoung Ryu, Yu; Garcia, Ricardo; Aitor Postigo, Pablo; Garcia, Fernando

    2014-06-02

    Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained with a top-down lithography method.

  4. An improved plate theory of order (1,2) for thick composite laminates

    NASA Technical Reports Server (NTRS)

    Tessler, A.

    1992-01-01

    A new (1,2)-order theory is proposed for the linear elasto-static analysis of laminated composite plates. The basic assumptions are those concerning the distribution through the laminate thickness of the displacements, transverse shear strains and the transverse normal stress, with these quantities regarded as some weighted averages of their exact elasticity theory representations. The displacement expansions are linear for the inplane components and quadratic for the transverse component, whereas the transverse shear strains and transverse normal stress are respectively quadratic and cubic through the thickness. The main distinguishing feature of the theory is that all strain and stress components are expressed in terms of the assumed displacements prior to the application of a variational principle. This is accomplished by an a priori least-square compatibility requirement for the transverse strains and by requiring exact stress boundary conditions at the top and bottom plate surfaces. Equations of equilibrium and associated Poisson boundary conditions are derived from the virtual work principle. It is shown that the theory is particularly suited for finite element discretization as it requires simple C(sup 0)- and C(sup -1)-continuous displacement interpolation fields. Analytic solutions for the problem of cylindrical bending are derived and compared with the exact elasticity solutions and those of our earlier (1,2)-order theory based on the assumed displacements and transverse strains.

  5. Sub-30 nm thick plasmonic films and structures with ultralow loss.

    PubMed

    Teo, Ee Jin; Toyoda, Noriaki; Yang, Chengyuan; Wang, Bing; Zhang, Nan; Bettiol, Andrew A; Teng, Jing Hua

    2014-03-21

    We report an alternative method of producing sub-30 nm thick silver films and structures with ultralow loss using gas cluster ion beam irradiation (GCIB). We have direct evidence showing that scattering from grain boundaries and voids rather than surface roughness are the main mechanisms for the increase in loss with reducing thickness. Using GCIB irradiation, we demonstrate the ability to reduce these scattering effects simultaneously through nanoscale surface smoothing, increase in grain width and lower percolation threshold. Significant improvement in electrical and optical properties by up to 4 times is obtained, before deviation from bulk silver properties starts to occur at 12 nm. We show that this is an enabling technology that can be applied post fabrication to metallic films or lithographically patterned nanostructures for enhanced plasmonic performance, especially in the ultrathin regime. PMID:24504045

  6. Fabrication of 5-20 nm thick β-W films

    SciTech Connect

    Narasimham, Avyaya J.; Medikonda, Manasa; Matsubayashi, Akitomo; Khare, Prasanna; Chong, Hyuncher; Matyi, Richard J.; Diebold, Alain; LaBella, Vincent P.

    2014-11-15

    A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO{sub 2} and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO{sub 2} layer or in an oxygen controlled environment by flowing 2 sccm of O{sub 2} during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO{sub 2} substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device.

  7. Dependence of Sheet Resistance of CoSi2 with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process

    NASA Astrophysics Data System (ADS)

    Kawamura, Kazuo; Inagaki, Satoshi; Saiki, Takashi; Nakamura, Ryo; Kataoka, Yuji; Kase, Masataka

    2007-11-01

    Since the distribution of gate resistance using cobalt silicide (CoSi2) increases markedly for gate lengths of 30 nm or less, CoSi2 is now being replaced by NiSi. However, CoSi2 still has the advantages of a high thermal stability and a low degree of roughness at the interface between the silicide and silicon layers owing to the low degree of mismatch (1.2%) of between their lattice constants. We have achieved excellent sheet resistance (Rs) with a gate length Lg=30 nm by optimizing the thickness of a cobalt capping layer of titanium nitride. The results shows an abnormal Rs behavior, in which one σ of Rs increases with capping layer thickness in the range of 10-50 nm, while it decreases with increasing capping layer thickness in the range of 0-10 nm. Unlike the results of a previous report [K. Goto et al.: IEDM Tech. Dig., 1995, p. 449], the variation in the Rs with a gate length Lg=30 nm is small, even without a TiN capping layer thickness down to 5-10 nm. We suggest that the uniformity of Rs is determined by the thickness of the CoSi layer after selective etching and the titanium concentration in the CoSi layer for capping TiN thicknesses of 10-50 nm, while the uniformity is determined by the titanium concentration and the damage sustained during selective etching for TiN thickness of 0-10 nm. For this optimization, CoSi2 is applicable to the 65 nm node technology node or beyond.

  8. Three-dimensional sub-100 nm resolution fluorescence microscopy of thick samples.

    PubMed

    Juette, Manuel F; Gould, Travis J; Lessard, Mark D; Mlodzianoski, Michael J; Nagpure, Bhupendra S; Bennett, Brian T; Hess, Samuel T; Bewersdorf, Joerg

    2008-06-01

    Imaging volumes as thick as whole cells at three-dimensional (3D) super-resolution is required to reveal unknown features of cellular organization. We report a light microscope that generates images with translationally invariant 30 x 30 x 75 nm resolution over a depth of several micrometers. This method, named biplane (BP) FPALM, combines a double-plane detection scheme with fluorescence photoactivation localization microscopy (FPALM) enabling 3D sub-diffraction resolution without compromising speed or sensitivity. PMID:18469823

  9. Metallic Nanoshells with Sub-10 nm Thickness and Their Performance as Surface-Enhanced Spectroscopy Substrate.

    PubMed

    Zhang, Xuemin; Guo, Lei; Luo, Jinmin; Zhao, Xueqi; Wang, Tieqiang; Li, Yunong; Fu, Yu

    2016-04-20

    As a crucial structural parameter, shell thickness greatly influences the optical properties of metallic nanoshells. However, there still lacks a reliable approach to prepare ultrathin core-shell nanoparticles. To solve this problem, a two-step gold seeding process was pointed out to increase the packing density of gold seeds on the silica core. With use of this method, the packing density of gold seeds reaches ∼60%, enabling us to successfully reduce the shell thickness to the sub-10 nm range. Afterward, we investigated optical properties of the as-prepared ultrathin nanoshells. It is found that thinner nanoshells exhibit a wider optical tunability and a greater electromagnetic field enhancement than their thicker counterparts, which makes ultrathin nanoshells an ideal substrate for surface-enhanced spectroscopes. PMID:27019405

  10. Threshold and efficiency for perforation of 1 nm thick carbon nanomembranes with slow highly charged ions

    NASA Astrophysics Data System (ADS)

    Wilhelm, Richard A.; Gruber, Elisabeth; Ritter, Robert; Heller, René; Beyer, André; Turchanin, Andrey; Klingner, Nico; Hübner, René; Stöger-Pollach, Michael; Vieker, Henning; Hlawacek, Gregor; Gölzhäuser, Armin; Facsko, Stefan; Aumayr, Friedrich

    2015-09-01

    Cross-linking of a self-assembled monolayer of 1,1‧-biphenyl-4-thiol by low energy electron irradiation leads to the formation of a carbon nanomembrane, that is only 1 nm thick. Here we study the perforation of these freestanding membranes by slow highly charged ion irradiation with respect to the pore formation yield. It is found that a threshold in potential energy of the highly charged ions of about 10 keV must be exceeded in order to form round pores with tunable diameters in the range of 5-15 nm. Above this energy threshold, the efficiency for a single ion to form a pore increases from 70% to nearly 100% with increasing charge. These findings are verified by two independent methods, namely the analysis of individual membranes stacked together during irradiation and the detailed analysis of exit charge state spectra utilizing an electrostatic analyzer.

  11. Label-free imaging of thick tissue at 1550 nm using a femtosecond optical parametric generator.

    PubMed

    Trägårdh, Johanna; Robb, Gillian; Gadalla, Kamal K E; Cobb, Stuart; Travis, Christopher; Oppo, Gian-Luca; McConnell, Gail

    2015-08-01

    We have developed a simple wavelength-tunable optical parametric generator (OPG), emitting broadband ultrashort pulses with peak wavelengths at 1530-1790 nm, for nonlinear label-free microscopy. The OPG consists of a periodically poled lithium niobate crystal, pumped at 1064 nm by a ultrafast Yb:fiber laser with high pulse energy. We demonstrate that this OPG can be used for label-free imaging, by third-harmonic generation, of nuclei of brain cells and blood vessels in a >150 μm thick brain tissue section, with very little decay of intensity with imaging depth and no visible damage to the tissue at an incident average power of 15 mW. PMID:26258338

  12. Choroidal Haller's and Sattler's Layer Thickness Measurement Using 3-Dimensional 1060-nm Optical Coherence Tomography

    PubMed Central

    Esmaeelpour, Marieh; Kajic, Vedran; Zabihian, Behrooz; Othara, Richu; Ansari-Shahrezaei, Siamak; Kellner, Lukas; Krebs, Ilse; Nemetz, Susanne; Kraus, Martin F.; Hornegger, Joachim; Fujimoto, James G.; Drexler, Wolfgang; Binder, Susanne

    2014-01-01

    Objectives To examine the feasibility of automatically segmented choroidal vessels in three-dimensional (3D) 1060-nmOCT by testing repeatability in healthy and AMD eyes and by mapping Haller's and Sattler's layer thickness in healthy eyes Methods Fifty-five eyes (from 45 healthy subjects and 10 with non-neovascular age-related macular degeneration (AMD) subjects) were imaged by 3D-1060-nmOCT over a 36°x36° field of view. Haller's and Sattler's layer were automatically segmented, mapped and averaged across the Early Treatment Diabetic Retinopathy Study grid. For ten AMD eyes and ten healthy eyes, imaging was repeated within the same session and on another day. Outcomes were the repeatability agreement of Haller's and Sattler's layer thicknesses in healthy and AMD eyes, the validation with ICGA and the statistical analysis of the effect of age and axial eye length (AL) on both healthy choroidalsublayers. Results The coefficients of repeatability for Sattler's and Haller's layers were 35% and 21% in healthy eyes and 44% and 31% in AMD eyes, respectively. The mean±SD healthy central submacular field thickness for Sattler's and Haller's was 87±56 µm and 141±50 µm, respectively, with a significant relationship for AL (P<.001). Conclusions Automated Sattler's and Haller's thickness segmentation generates rapid 3D measurements with a repeatability correspondingto reported manual segmentation. Sublayers in healthy eyes thinnedsignificantly with increasing AL. In the presence of the thinned Sattler's layer in AMD, careful measurement interpretation is needed. Automatic choroidal vascular layer mapping may help to explain if pathological choroidal thinning affects medium and large choroidal vasculature in addition to choriocapillaris loss. PMID:24911446

  13. 120nm resolution in thick samples with structured illumination and adaptive optics

    NASA Astrophysics Data System (ADS)

    Thomas, Benjamin; Sloan, Megan; Wolstenholme, Adrian J.; Kner, Peter

    2014-03-01

    μLinear Structured Illumination Microscopy (SIM) provides a two-fold increase over the diffraction limited resolution. SIM produces excellent images with 120nm resolution in tissue culture cells in two and three dimensions. For SIM to work correctly, the point spread function (PSF) and optical transfer function (OTF) must be known, and, ideally, should be unaberrated. When imaging through thick samples, aberrations will be introduced into the optical system which will reduce the peak intensity and increase the width of the PSF. This will lead to reduced resolution and artifacts in SIM images. Adaptive optics can be used to correct the optical wavefront restoring the PSF to its unaberrated state, and AO has been used in several types of fluorescence microscopy. We demonstrate that AO can be used with SIM to achieve 120nm resolution through 25m of tissue by imaging through the full thickness of an adult C. elegans roundworm. The aberrations can be corrected over a 25μm × 45μm field of view with one wavefront correction setting, demonstrating that AO can be used effectively with widefield superresolution techniques.

  14. Ultra-soft 100 nm thick zero Poisson's ratio film with 60% reversible compressibility

    NASA Astrophysics Data System (ADS)

    Nguyen, Chieu; Szalewski, Steve; Saraf, Ravi

    2013-03-01

    Squeezing films of most solids, liquids and granular materials causes dilation in the lateral dimension which is characterized by a positive Poisson's ratio. Auxetic materials, such as, special foams, crumpled graphite, zeolites, spectrin/actin membrane, and carbon nanotube laminates shrink, i.e., their Poisson's ratio is negative. As a result of Poisson's effect, the force to squeeze an amorphous material, such as a viscous thin film coating adhered to rigid surface increases by over million fold as the thickness decreases from 10 μm to 100 nm due to constrain on lateral deformations and off-plane relaxation. We demonstrate, ultra-soft, 100 nm films of polymer/nanoparticle composite adhered to 1.25 cm diameter glass that can be reversibly squeezed over 60% strain between rigid plates requiring (very) low stresses below 100 KPa. Unlike non-zero Poisson's ratio materials, stiffness decreases with thickness, and the stress distribution is uniform over the film as mapped electro-optically. The high deformability at very low stresses is explained by considering reentrant cellular structure found in cork and the wings of beetles that have Poisson's ratio near zero.

  15. Effect of titanium oxide nanoparticle incorporation into nm thick coatings deposited using an atmospheric pressure plasma.

    PubMed

    Denis, Dowling P; Barry, Twomey; Gerry, Byrne

    2010-04-01

    This study reports on the use of an atmospheric plasma technique to incorporate metal oxide nanoparticles into nm thick siloxane coatings. Titanium dioxide (TiO2) particles with diameters of 30-80 nm, were mixed with a number of different siloxanes-polydimethylsiloxane, hexamethyldisiloxane and tetraethylorthosilicate (TEOS). The TiO2/TEOS mixture was found to give the most stable suspension, possibly due to the higher surface tension of TEOS compared with the other siloxanes. TiO2/TEOS mixtures with 2 to 10% by weight of the metal oxide were prepared and were then nebulised into a helium/oxygen atmospheric plasma. Polyethylene terepthalate (PET) and silicon wafer substrates were passed through this plasma using a reel-to-reel substrate manipulation system. SEM combined with EDX was used to examine the distribution of the metal oxide particles in the resultant coatings. The TEOS coating thickness without TiO2 addition was 9 nm. The composite coating consisted of a relatively homogeneous distribution of small agglomerates of the TiO2 nanoparticles in TEOS. A linear increase in the titanium surface concentration was observed with increase in the quantity of TiO2 added into the siloxane precursor. The chemical functionality of the siloxane coating was examined using FTIR spectroscopy and no significant spectrum differences was observed with the incorporation of the different concentrations of TiO2 into the polymer. There were also no changes observed in coating surface energy with TiO2 incorporation. Coating morphology was examined using optical profilometry and surface roughness (Ra) values increased from typical values of 0.8 nm for the TEOS coating to 4.1 nm for the TiO2/TEOS coating. The adhesion of the deposited coatings was compared using fragmentation tests. These were carried out through uniaxial tensile loading. The coating cracking pattern after applied strain of 20% was not observed to change significantly with the addition of TiO2 into the siloxane. PMID

  16. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

    SciTech Connect

    Nguyen, Ba-Son; Lin, Jen-Fin

    2014-02-24

    We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 °C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 °C. At 800 °C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

  17. Tunneling characteristics for nm-thick mesas consisting of a few intrinsic Josephson junctions

    NASA Astrophysics Data System (ADS)

    Suzuki, Minoru; Ohmaki, Masayuki; Takemura, Ryota; Hamada, Kenji; Watanabe, Takao; Ota, Kensuke; Kitano, Haruhisa; Maeda, Atsutaka

    2008-10-01

    Very thin mesa structures consisting of a few intrinsic Josephson junctions have been fabricated on single crystal surfaces of Bi2Sr2CaCu2O8+δ. In the fabrication procedure, annealing is conducted after the mesa structure is formed by Ar ion milling. Or, the annealing is skipped and, instead, the electrodes to the mesas have been deposited in vacuum immediately after crystals are cleaved. We have attained both uniform current-voltage (I-V) characteristics and small contact resistances, which are usually difficult to obtain at the same time in the case of nm-thick mesa structures. For the mesas thus fabricated, it is found that the Josephson critical current Jc of the top IJJ (the surface junction) is reduced significantly. The reduction of Jc is more significant when the doping level of the crystal used is lower. We argue that this is due to the proximity efiect of the surface junction, in which the top electrode is in close proximity with the Ag or Au film of a thickness of the order of 300 nm. For mesas obtained by this method, the switching probability distribution has been measured. It is found that when the mesa lateral size is larger than 2 μm the switching is unreproducible and lacking systematic temperature dependence. It is also found that escape temperature Tesc and the standard deviation σ for the switching probability distribution exhibits a large deviation from the Kramers' thermal activation theory. When the lateral size is no larger than 2 μm, the switching probability distribution results show coincidence with the theory in the temperature range from 1.3 K to 5 K. Below 0.5 K, the escape temperature tends to saturate and indicates a crossover near 0.5 K from the thermal activation to the macroscopic quantum tunneling.

  18. Leaping shampoo glides on a 500-nm-thick lubricating air layer

    NASA Astrophysics Data System (ADS)

    Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

    2013-11-01

    When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

  19. Tunable spiral Bragg gratings in 60-nm-thick silicon-on-insulator strip waveguides.

    PubMed

    Zou, Zhi; Zhou, Linjie; Wang, Minjuan; Wu, Kan; Chen, Jianping

    2016-06-13

    We demonstrate spiral integrated Bragg gratings (IBGs) in 60-nm-thick strip waveguides on the silicon-on-insulator (SOI) platform. The length of the spiral IBG is 2 mm, occupying an area of 147 × 141 μm2 with a minimum bending radius of 20 μm. Experiments show that the spiral IBGs exhibit a single narrow transparent peak with a Q-factor of 1 × 105 in a broad stopband, induced by the phase shift of the S-junction at the spiral center. This phenomenon is analogous to the electromagnetically induced transparency (EIT) effect. The transparent peak can periodically shift in the stopband upon heating of the S-junction using a TiN-based heater on top. The peak transmittance and Q-factor are dependent on the reflectivity of the spiral IBG. The transparent peak can be completely eliminated under a certain tuning power, and the spiral IBG hence behaves as a bandstop optical filter. The bandwidth is 0.94 nm and the extinction ratio is as high as 43 dB. The stopband can also be shifted by heating the Bragg gratings using a separate TiN heater. The experimental results agree well with the modeling results based on the transfer matrix method. PMID:27410302

  20. Signaling through ERK1/2 controls myelin thickness during myelin repair in the adult central nervous system.

    PubMed

    Fyffe-Maricich, Sharyl L; Schott, Alexandra; Karl, Molly; Krasno, Janet; Miller, Robert H

    2013-11-20

    Oligodendrocytes, the myelin-forming cells of the CNS, exquisitely tailor the thickness of individual myelin sheaths to the diameter of their target axons to maximize the speed of action potential propagation, thus ensuring proper neuronal connectivity and function. Following demyelinating injuries to the adult CNS, newly formed oligodendrocytes frequently generate new myelin sheaths. Following episodes of demyelination such as those that occur in patients with multiple sclerosis, however, the matching of myelin thickness to axon diameter fails leaving remyelinated axons with thin myelin sheaths potentially compromising function and leaving axons vulnerable to damage. How oligodendrocytes determine the appropriate thickness of myelin for an axon of defined size during repair is unknown and identifying the signals that regulate myelin thickness has obvious therapeutic implications. Here, we show that sustained activation of extracellular-regulated kinases 1 and 2 (ERK1/2) in oligodendrocyte lineage cells results in accelerated myelin repair after injury, and is sufficient for the generation of thick myelin sheaths around remyelinated axons in the adult mouse spinal cord. Our findings suggest a model where ERK1/2 MAP kinase signaling acts as a myelin thickness rheostat that instructs oligodendrocytes to generate axon-appropriate quantities of myelin. PMID:24259565

  1. A {1,2}-Order Plate Theory Accounting for Three-Dimensional Thermoelastic Deformations in Thick Composite and Sandwich Laminates

    NASA Technical Reports Server (NTRS)

    Tessler, A.; Annett, M. S.; Gendron, G.

    2001-01-01

    A {1,2}-order theory for laminated composite and sandwich plates is extended to include thermoelastic effects. The theory incorporates all three-dimensional strains and stresses. Mixed-field assumptions are introduced which include linear in-plane displacements, parabolic transverse displacement and shear strains, and a cubic distribution of the transverse normal stress. Least squares strain compatibility conditions and exact traction boundary conditions are enforced to yield higher polynomial degree distributions for the transverse shear strains and transverse normal stress through the plate thickness. The principle of virtual work is used to derive a 10th-order system of equilibrium equations and associated Poisson boundary conditions. The predictive capability of the theory is demonstrated using a closed-form analytic solution for a simply-supported rectangular plate subjected to a linearly varying temperature field across the thickness. Several thin and moderately thick laminated composite and sandwich plates are analyzed. Numerical comparisons are made with corresponding solutions of the first-order shear deformation theory and three-dimensional elasticity theory. These results, which closely approximate the three-dimensional elasticity solutions, demonstrate that through - the - thickness deformations even in relatively thin and, especially in thick. composite and sandwich laminates can be significant under severe thermal gradients. The {1,2}-order kinematic assumptions insure an overall accurate theory that is in general superior and, in some cases, equivalent to the first-order theory.

  2. Large-scale freestanding nanometer-thick graphite pellicles for mass production of nanodevices beyond 10 nm.

    PubMed

    Kim, Seul-Gi; Shin, Dong-Wook; Kim, Taesung; Kim, Sooyoung; Lee, Jung Hun; Lee, Chang Gu; Yang, Cheol-Woong; Lee, Sungjoo; Cho, Sang Jin; Jeon, Hwan Chul; Kim, Mun Ja; Kim, Byung-Gook; Yoo, Ji-Beom

    2015-09-21

    Extreme ultraviolet lithography (EUVL) has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10 nm. We present a new pellicle material, nanometer-thick graphite film (NGF), which shows an extreme ultraviolet (EUV) transmission of 92% at a thickness of 18 nm. The maximum temperature induced by laser irradiation (λ = 800 nm) of 9.9 W cm(-2) was 267 °C, due to the high thermal conductivity of the NGF. The freestanding NGF was found to be chemically stable during annealing at 500 °C in a hydrogen environment. A 50 × 50 mm large area freestanding NGF was fabricated using the wet and dry transfer (WaDT) method. The NGF can be used as an EUVL pellicle for the mass production of nanodevices beyond 10 nm. PMID:26159369

  3. Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films

    SciTech Connect

    Narasimham, Avyaya J.; Green, Avery; Matyi, Richard J.; Khare, Prasanna; Vo, Tuan; Diebold, Alain; LaBella, Vincent P.

    2015-11-15

    A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N{sub 2} gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.

  4. 2D Zeolite Coatings: Langmuir-Schaefer Deposition of 3 nm Thick MFI Zeolite Nanosheets.

    PubMed

    Rangnekar, Neel; Shete, Meera; Agrawal, Kumar Varoon; Topuz, Berna; Kumar, Prashant; Guo, Qiang; Ismail, Issam; Alyoubi, Abdulrahman; Basahel, Sulaiman; Narasimharao, Katabathini; Macosko, Christopher W; Mkhoyan, K Andre; Al-Thabaiti, Shaeel; Stottrup, Benjamin; Tsapatsis, Michael

    2015-05-26

    Stable suspensions of zeolite nanosheets (3 nm thick MFI layers) were prepared in ethanol following acid treatment, which partially removed the associated organic structure-directing agent. Nanosheets from these suspensions could then be dispersed at the air-water interface and transferred to silicon wafers using Langmuir-Schaefer deposition. Using layer-by-layer deposition, control on coating thickness was demonstrated. In-plane X-ray diffraction (XRD) revealed that the deposited nanosheets contract upon calcination similar to bulk MFI crystals. Different methods for secondary growth resulted in preferentially oriented thin films of MFI, which had sub-12-nm thickness in certain cases. Upon calcination, there was no contraction detectable by in-plane XRD, indicating well-intergrown MFI films that are strongly attached to the substrate. PMID:25864539

  5. Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

    NASA Astrophysics Data System (ADS)

    Herrmann, Ashley Ann Elizabeth

    In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and

  6. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    SciTech Connect

    Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  7. Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

    NASA Astrophysics Data System (ADS)

    Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

    2015-11-01

    Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

  8. Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

    PubMed Central

    Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

    2015-01-01

    Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5–2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0–2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed. PMID:26527044

  9. Measuring sub-nm adsorbed water layer thickness and desorption rate using a fused-silica whispering-gallery microresonator

    NASA Astrophysics Data System (ADS)

    Ganta, D.; Dale, E. B.; Rosenberger, A. T.

    2014-05-01

    We report an optical method for measuring the thickness of the water layer adsorbed onto the surface of a high-Q fused-silica microresonator. Light from a tunable diode laser operating near 1550 nm is coupled into the microresonator to excite whispering-gallery modes (WGMs). By observing thermal distortion or even bistability of the WGM resonances caused by absorption in the water layer, the contribution of that absorption to the total loss is determined. Thereby, the thickness of the water layer is found to be ˜0.1 nm (approximately one monolayer). This method is further extended to measure the desorption rate of the adsorbed water, which is roughly exponential with a decay time of ˜40 h when the fused-silica microresonator is held in a vacuum chamber at low pressure.

  10. Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film.

    PubMed

    He, Liang; Xiu, Faxian; Yu, Xinxin; Teague, Marcus; Jiang, Wanjun; Fan, Yabin; Kou, Xufeng; Lang, Murong; Wang, Yong; Huang, Guan; Yeh, Nai-Chang; Wang, Kang L

    2012-03-14

    We report a direct observation of surface dominated conduction in an intrinsic Bi(2)Se(3) thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range. PMID:22316380

  11. The cutting of ultrathin sections with the thickness less than 20 nm from biological specimens embedded in resin blocks.

    PubMed

    Nebesářová, Jana; Hozák, Pavel; Frank, Luděk; Štěpan, Petr; Vancová, Marie

    2016-06-01

    Low voltage electron microscopes working in transmission mode, like LVEM5 (Delong Instruments, Czech Republic) working at accelerating voltage 5 kV or scanning electron microscope working in transmission mode with accelerating voltage below 1 kV, require ultrathin sections with the thickness below 20 nm. Decreasing of the primary electron energy leads to enhancement of image contrast, which is especially useful in the case of biological samples composed of elements with low atomic numbers. As a result treatments with heavy metals, like post-fixation with osmium tetroxide or ultrathin section staining, can by omitted. The disadvantage is reduced penetration ability of incident electrons influencing the usable thickness of the specimen resulting in the need of ultrathin sections of under 20 nm thickness. In this study we want to answer basic questions concerning the cutting of extremely ultrathin sections: Is it possible routinely and reproducibly to cut extremely thin sections of biological specimens embedded in commonly used resins with contemporary ultramicrotome techniques and under what conditions? Microsc. Res. Tech. 79:512-517, 2016. © 2016 Wiley Periodicals, Inc. PMID:27030160

  12. Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application

    SciTech Connect

    Laha, Apurba; Bugiel, E.; Osten, H.J.; Fissel, A.

    2006-04-24

    Ternary neodymium-gadolinium oxide (NGO) thin films were grown epitaxially on Si(001) substrates using modified molecular beam epitaxy. The electrical properties of NGO thin films demonstrate that this ternary oxide could be one of the most promising candidates to replace the conventionally used SiO{sub 2} or SiO{sub x}N{sub y} in complementary metal oxide semiconductor devices. The films were characterized with various methods. The capacitance equivalent oxide thickness of 4.5 nm thin films extracted from capacitance-voltage (C-V) characteristics was 0.9 nm. For such films, leakage current density and the density of interface traps were 2.6x10{sup -4} A/cm{sup 2} at vertical bar V{sub g}-V{sub FBV} vertical bar=1 V and 1.4x10{sup 12}/cm{sup 2} eV{sup -1}, respectively.

  13. Advancement of Imidazo[1,2-a]pyridines with Improved Pharmacokinetics and nM Activity vs. Mycobacterium tuberculosis

    PubMed Central

    2013-01-01

    A set of 14 imidazo[1,2-a]pyridine-3-carboxamides was synthesized and screened against Mycobacterium tuberculosis H37Rv. The minimum inhibitory concentrations of 12 of these agents were ≤1 μM against replicating bacteria and 5 compounds (9, 12, 16, 17, and 18) had MIC values ≤0.006 μM. Compounds 13 and 18 were screened against a panel of MDR and XDR drug resistant clinical Mtb strains with the potency of 18 surpassing that of clinical candidate PA-824 by nearly 10-fold. The in vivo pharmacokinetics of compounds 13 and 18 were evaluated in male mice by oral (PO) and intravenous (IV) routes. These results indicate that readily synthesized imidazo[1,2-a]pyridine-3-carboxamides are an exciting new class of potent, selective anti-TB agents that merit additional development opportunities. PMID:23930153

  14. Tension strength of a thick graphite/epoxy laminate after impact by a 1/2-in. radius impactor

    NASA Technical Reports Server (NTRS)

    Poe, C. C., Jr.; Illg, W.; Garber, D. P.

    1986-01-01

    NASA is developing graphite/epoxy filament-wound cases for solid rocket motors of the space shuttle. They are wet-wound with AS4W graphite fiber and HBRF-55A epoxy. The membrane region is about 1.4 inches thick. Two 30-inch-diameter by 12-inch-long cylinders were impacted every two inches of circumference with 1/2-inch radius impactors that were dropped from various heights. One cylinder was empty and the other was filled with inert propellant. Two-inch-wide test specimens were cut from the cylinders. Each was centered on an impact site. The specimens were x-rayed and loaded to failure in uniaxial tension. Rigid body mechanics and the Hertz law were used to predict impact force, local deformations, contact diameters, and contact pressures. The depth of impact damage was predicted using Love's solution for pressure applied on part of the boundary of a semi-infinite body. The predictions were reasonably good. The strengths of the impacted specimens were reduced by as much as 37 percent without visible surface damage. Even the radiographs did not reveal the nonvisible damage.

  15. Localization and quasilocalization of a spin-1 /2 fermion field on a two-field thick braneworld

    NASA Astrophysics Data System (ADS)

    Guo, Heng; Xie, Qun-Ying; Fu, Chun-E.

    2015-11-01

    Localization of a spin-1 /2 fermion on the braneworld is an important and interesting problem. It is well known that a five-dimensional free massless fermion Ψ minimally coupled to gravity cannot be localized on the Randall-Sundrum braneworld. In order to trap such a fermion, the coupling between the fermion and bulk scalar fields should be introduced. In this paper, localization and quasilocalization of a bulk fermion on the thick braneworld generated by two scalar fields (a kink scalar ϕ and a dilaton scalar π ) are investigated. Two types of couplings between the fermion and two scalars are considered. One coupling is the usual Yukawa coupling -η Ψ ¯ϕ Ψ between the fermion and kink scalar, another one is λ Ψ ¯ΓM∂Mπ γ5Ψ between the fermion and dilaton scalar. The left-chiral fermion zero mode can be localized on the brane, and both the left- and right-chiral fermion massive Kaluza-Klein modes may be localized or quasilocalized. Hence the four-dimensional massless left-chiral fermion and massive Dirac fermions, whose lifetime is infinite or finite, can be obtained on the brane.

  16. 60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

    PubMed

    Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

    2015-08-10

    We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide. PMID:26367931

  17. nm- thick conformal pore-sealing of self-assembled mesoporous silica by plasma-assisted atomic layer deposition

    PubMed Central

    Jiang, Ying-Bing; Liu, Nanguo; Gerung, Henry; Cecchi, Joseph L.; Brinker, C. Jeffrey

    2009-01-01

    On a porous substrate, regular atomic layer deposition (ALD) not only takes place on top of the substrate but also penetrates into the internal porosity. Here we report a plasma-assisted process in which the ALD precursors are chosen to be non-reactive unless triggered by plasma, so that ALD can be spatially defined by the supply of plasma irradiation. Since plasma cannot penetrate within the internal porosity, ALD has been successfully confined to the immediate surface. This not only gives a possible solution for sealing of porous low dielectric constant films with a conformal layer of nm-scale thickness, but also enables us to progressively reduce the pore size of mesoporous materials in a sub-Å/cycle fashion for membrane formation. PMID:16925407

  18. Mechanical characterization of sub-100-nm-thick Au thin films by electrostatically actuated tensile testing with several strain rates

    NASA Astrophysics Data System (ADS)

    Oh, Hyun-Jin; Kawase, Shinya; Hanasaki, Itsuo; Isono, Yoshitada

    2014-02-01

    We have developed the tensile testing device based on MEMS technology and applied it to the Au thin films with thickness in the sub-100-nm regime. The specimen was fabricated by thermal deposition and sputtering processes in the course of device fabrication. This technique of device fabrication in combination with the specimen realizes the precise loading direction without preloading before tensile tests. The loads were applied electrostatically by the comb-drive actuator. The obtained Young’s modulus was 28 ± 3 GPa and was insensitive to the strain rate. The 0.2% yield strength was in the range from 192 to 519 MPa with a trend of decrease with decreasing strain rate in the range from 5 × 10-5 to 5 × 10-2 s-1.

  19. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    NASA Astrophysics Data System (ADS)

    Nakaharai, Shu; Tezuka, Tsutomu; Sugiyama, Naoharu; Moriyama, Yoshihiko; Takagi, Shin-ichi

    2003-10-01

    A strained Ge-on-insulator (GOI) structure with a 7-nm-thick Ge layer was fabricated for applications to high-speed transistors. The GOI layer was formed by thermal oxidation of a strained SiGe layer grown epitaxially on a silicon-on-insulator (SOI) wafer. In transmission electron microscopy measurements, the obtained GOI layer exhibited a single-crystal structure with the identical orientation to an original SOI substrate and a smooth Ge/SiO2 interface. The rms of the surface roughness of the GOI layer was evaluated to be 0.4 nm by atomic force microscopy. The residual Si fraction in the GOI layer was estimated to be lower than the detection limit of Raman spectroscopy of 0.5% and also than the electron energy loss spectroscope measurements of 3%. It was found that the obtained GOI layer was compressively strained with a strain of 1.1%, which was estimated by the Raman spectroscopy. Judging from the observed crystal quality and the strain value, this technique is promising for fabrication of high-mobility strained Ge channel of high-performance GOI metal-insulator-semiconductor (MIS) transistors.

  20. A Sub-ppm Acetone Gas Sensor for Diabetes Detection Using 10 nm Thick Ultrathin InN FETs

    PubMed Central

    Kao, Kun-Wei; Hsu, Ming-Che; Chang, Yuh-Hwa; Gwo, Shangjr; Yeh, J. Andrew

    2012-01-01

    An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4 ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm by 2 mm. Detection of such a low acetone concentration in exhaled breath could enable early diagnosis of diabetes for portable physiological applications. The ultrathin InN epilayer extensively enhances sensing sensitivity due to its strong electron accumulation on roughly 5–10 nm deep layers from the surface. Platinum as catalyst can increase output current signals by 2.5-fold (94 vs. 37.5 μA) as well as reduce response time by 8.4-fold (150 vs. 1,260 s) in comparison with bare InN. More, the effect of 3% oxygen consumption due to breath inhalation and exhalation on 2.4 ppm acetone gas detection was investigated, indicating that such an acetone concentration can be analyzed in air. PMID:22969342

  1. Implications for generating an ERS1/2-ICESat-Cryosat-ICESat-2 time series of sea ice thickness change

    NASA Astrophysics Data System (ADS)

    Markus, T.; Neumann, T.; Kwok, R.; Laxon, S.

    2012-12-01

    Radar and laser altimetry data from ERS-1 and ICESat provided the first basin-scale estimates of sea ice thickness and are considered the cornerstone of sea ice thickness retrievals from space. Neither mission had the retrieval of sea ice measurements listed in their requirements. Since then ESA and NASA have been developing a new generation of those measurement concepts with Cryosat (launched in April 2010) and ICESat-2 (scheduled for launch in 2016), and extracting information of sea ice thickness is an integral part of those missions. Furthermore, IceBridge, an airborne campaign to bridge the data gap between ICESat and ICESat-2, is collecting data with various instruments along transects across the Arctic Ocean every March/April since 2009; some transects are aligned with ICESat as well as with Cryosat ground tracks. While all those instruments have shown to be able (or are expected to be able, in the case of ICESat-2) to extract sea ice thickness, the physical principles behind those measurements are different, their spatial and temporal coverage is different, and their spatial resolutions are different. This results in different uncertanties and errors for Arctic-wide sea ice thickness estimates. The talk will discuss the those uncertainties and errors and how those need to be accounted for when deriving a long-term data set of sea ice thickness.

  2. Fabrication of 3-nm-thick Si3N4 membranes for solid-state nanopores using the poly-Si sacrificial layer process

    PubMed Central

    Yanagi, Itaru; Ishida, Takeshi; Fujisaki, Koji; Takeda, Ken-ichi

    2015-01-01

    To improve the spatial resolution of solid-state nanopores, thinning the membrane is a very important issue. The most commonly used membrane material for solid-state nanopores is silicon nitride (Si3N4). However, until now, stable wafer-scale fabrication of Si3N4 membranes with a thickness of less than 5 nm has not been reported, although a further reduction in thickness is desired to improve spatial resolution. In the present study, to fabricate thinner Si3N4 membranes with a thickness of less than 5 nm in a wafer, a new fabrication process that employs a polycrystalline-Si (poly-Si) sacrificial layer was developed. This process enables the stable fabrication of Si3N4 membranes with thicknesses of 3 nm. Nanopores were fabricated in the membrane using a transmission electron microscope (TEM) beam. Based on the relationship between the ionic current through the nanopores and their diameter, the effective thickness of the nanopores was estimated to range from 0.6 to 2.2 nm. Moreover, DNA translocation through the nanopores was observed. PMID:26424588

  3. 1.2-17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor

    NASA Astrophysics Data System (ADS)

    Lee, Sang-yeop; Ito, Hiroyuki; Amakawa, Shuhei; Tanoi, Satoru; Ishihara, Noboru; Masu, Kazuya

    2012-02-01

    A wide-frequency-range phase-locked loop (PLL) with subharmonic injection locking is proposed. The PLL is equipped with a wide tunable ring-type voltage-controlled oscillator (ring VCO), frequency dividers, and a doubler in order to the widen injection-locked tuning range (ILTR). In addition, high-frequency injection signals are used to improve phase noise, which is supposed to be generated by a reference PLL. The proposed circuit is fabricated by using a 65 nm Si complementary metal oxide semiconductor (CMOS) process. The measured frequency tuning range is from 1.2 to 17.6 GHz with a frequency doubler and dividers. The phase noise at 14.4 GHz (=32×450 MHz) with injection locking was -109 dBc/Hz, which shows a 21-dB reduction compared with that in the case without injection locking.

  4. Synthesis and characterization of 10 nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices

    SciTech Connect

    Zaghloul, Usama; Piazza, Gianluca

    2014-06-23

    The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10 nm) ever deposited on ultrathin platinum layers (2–5 nm) using reactive sputtering. X-ray diffraction, high-resolution transmission electron microscopy, and fast Fourier transform analyses confirmed the proper crystal orientation, fine columnar texture, and the continuous lattice structure within individual grains in the deposited AlN nanometer thick films. The average extracted d{sub 31} piezoelectric coefficient for the synthesized films is −1.73 pC/N, which is comparable to the reported values for micron thick and highly c-axis oriented AlN films. The 10 nm AlN films were employed to demonstrate two different types of optimized piezoelectric nanoactuators. The unimorph actuators exhibit vertical displacements as large as 1.1 μm at 0.7 V for 25 μm long and 30 nm thick beams. These results have a great potential to realize miniaturized NEMS relays with extremely low voltage, high frequency resonators, and ultrasensitive sensors.

  5. Photorefractive acousto-optic imaging in thick scattering media at 790 nm with a Sn(2)P(2)S(6):Te crystal.

    PubMed

    Farahi, Salma; Montemezzani, Germano; Grabar, Alexander A; Huignard, Jean-Pierre; Ramaz, François

    2010-06-01

    Acousto-optic imaging is based on ultrasound modulation of multiply scattered light in thick media. We experimentally demonstrate the possibility to perform a self-adaptive wavefront holographic detection at 790nm, within the optical therapeutic window where absorption of biological tissues is minimized. A high-gain Te-doped Sn(2)P(2)S(6) crystal is used for this purpose. Optical absorbing objects embedded within a thick scattering phantom are imaged by use of pulsed ultrasound to get a dynamic millimetric axial resolution. Our technique represents an interesting approach for breast cancer detection. PMID:20517420

  6. Thickness-dependent crystallization on thermal anneal for titania/silica nm-layer composites deposited by ion beam sputter method.

    PubMed

    Pan, Huang-Wei; Wang, Shun-Jin; Kuo, Ling-Chi; Chao, Shiuh; Principe, Maria; Pinto, Innocenzo M; DeSalvo, Riccardo

    2014-12-01

    Crystallization following thermal annealing of thin film stacks consisting of alternating nm-thick titania/silica layers was investigated. Several prototypes were designed, featuring a different number of titania/silica layer pairs, and different thicknesses (in the range from 4 to 40 nm, for the titania layers), but the same nominal refractive index (2.09) and optical thickness (a quarter of wavelength at 1064 nm). The prototypes were deposited by ion beam sputtering on silicon substrates. All prototypes were found to be amorphous as-deposited. Thermal annealing in air at progressive temperatures was subsequently performed. It was found that the titania layers eventually crystallized forming the anatase phase, while the silica layers remained always amorphous. However, progressively thinner layers exhibited progressively higher threshold temperatures for crystallization onset. Accordingly it can be expected that composites with thinner layers will be able to sustain higher annealing temperatures without crystallizing, and likely yielding better optical and mechanical properties for advanced coatings application. These results open the way to the use of materials like titania and hafnia, that crystallize easily under thermal anneal, but ARE otherwise promising candidate materials for HR coatings necessary for cryogenic 3rd generation laser interferometric gravitational wave detectors. PMID:25606914

  7. Estimation of anisotropy coefficient and total attenuation of swine liver at 850 nm based on a goniometric technique: influence of sample thickness.

    PubMed

    Saccomandi, P; Vogel, V; Bazrafshan, B; Schena, E; Vogl, T J; Silvestri, S; Mäntele, W

    2014-01-01

    Estimation of optical properties of biologic tissue is crucial for theoretical modeling of laser treatments in medicine. Tissue highly absorbs and scatters the light between 650 nm and 1300 nm, where the laser provides therapeutic effects. Among other properties, the characteristic of biological tissues to scatter the light traveling trough, is described by the anisotropy coefficient (g). The relationship between g and the distribution of the scattered light at different angles is described by Henyey-Greenstein phase function. The measurement of angular distribution of scattered light is performed by the goniometric technique. This paper describes the estimation of g and attenuation coefficient, μt, of swine liver at 850 nm, performed by an ad hoc designed goniometric-based system, where a spectrometer measures intensities of scattered light at fixed angles (0°, 30°, 45°, 60, 120°, 135° and 150°). Both one-term and two-term Henyey-Greenstein phase function have been employed to estimate anisotropy coefficient for forward (gfs) and backward scattering (gbs). Measurements are performed on samples of two thicknesses (60 um and 30 urn) to investigate the influence of this factor on g, and repeated 6 times for each thickness. The estimated values of gfs were 0.947 and 0.951 for thickness of 60 μm and 30 μm, respectively; the estimations of gfs were -0.498 and -0.270 for thickness of 60 μm and 30 μm, respectively. Moreover, μt of liver has been estimated (i.e., 90±20 cm(1)), through Lambert-Beer equation. The comparison of our results with data reported in literature encourages the use of the ad hoc designed tool for performing experiments on other tissue, and at other wavelengths. PMID:25571198

  8. Liquid crystal films as on-demand, variable thickness (50–5000 nm) targets for intense lasers

    SciTech Connect

    Poole, P. L. Andereck, C. D.; Schumacher, D. W.; Daskalova, R. L.; Feister, S.; George, K. M.; Willis, C.; Akli, K. U.; Chowdhury, E. A.

    2014-06-15

    We have developed a new type of target for intense laser-matter experiments that offers significant advantages over those currently in use. The targets consist of a liquid crystal film freely suspended within a metal frame. They can be formed rapidly on-demand with thicknesses ranging from nanometers to micrometers, where the particular value is determined by the liquid crystal temperature and initial volume as well as by the frame geometry. The liquid crystal used for this work, 8CB (4′-octyl-4-cyanobiphenyl), has a vapor pressure below 10{sup −6} Torr, so films made at atmospheric pressure maintain their initial thickness after pumping to high vacuum. Additionally, the volume per film is such that each target costs significantly less than one cent to produce. The mechanism of film formation and relevant physics of liquid crystals are described, as well as ion acceleration data from the first shots on liquid crystal film targets at the Ohio State University Scarlet laser facility.

  9. Liquid crystal films as on-demand, variable thickness (50-5000 nm) targets for intense lasers

    NASA Astrophysics Data System (ADS)

    Poole, P. L.; Andereck, C. D.; Schumacher, D. W.; Daskalova, R. L.; Feister, S.; George, K. M.; Willis, C.; Akli, K. U.; Chowdhury, E. A.

    2014-06-01

    We have developed a new type of target for intense laser-matter experiments that offers significant advantages over those currently in use. The targets consist of a liquid crystal film freely suspended within a metal frame. They can be formed rapidly on-demand with thicknesses ranging from nanometers to micrometers, where the particular value is determined by the liquid crystal temperature and initial volume as well as by the frame geometry. The liquid crystal used for this work, 8CB (4'-octyl-4-cyanobiphenyl), has a vapor pressure below 10-6 Torr, so films made at atmospheric pressure maintain their initial thickness after pumping to high vacuum. Additionally, the volume per film is such that each target costs significantly less than one cent to produce. The mechanism of film formation and relevant physics of liquid crystals are described, as well as ion acceleration data from the first shots on liquid crystal film targets at the Ohio State University Scarlet laser facility.

  10. Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  11. Randomised clinical trial evaluating best-corrected visual acuity and central macular thickness after 532-nm subthreshold laser grid photocoagulation treatment in diabetic macular oedema

    PubMed Central

    Pei-pei, W; Shi-zhou, H; Zhen, T; Lin, L; Ying, L; Jiexiong, O; Wen-bo, Z; Chen-jin, J

    2015-01-01

    Purpose To compare best-corrected visual acuity (BCVA) and central macular thickness (CMT) after 532-nm subthreshold laser grid photocoagulation and threshold laser grid photocoagulation for the treatment of diabetic macular oedema (DME). Patients and methods Twenty-three patients (46 eyes) with binocular DME were enroled in this study. The two eyes of each patient were divided into a subthreshold photocoagulation group and a threshold photocoagulation group. The eyes of the subthreshold group underwent 532-nm patter scan laser system (PASCAL) 50% end point subthreshold laser grid photocoagulation therapy, whereas the threshold photocoagulation group underwent short-pulse grid photocoagulation with a 532-nm PASCAL system. BCVA and CMT were assessed in all patients before treatment, 7 days after treatment, and 1, 3, and 6 months after treatment. Results After grid photocoagulation, the mean BCVA improved in both the subthreshold group, and the threshold group, and the two groups did not differ statistically significantly from each other. Similarly, the macular oedema diminished in both groups after treatment, and the two groups did not differ statistically significantly from each other with regard to CMT. Conclusion Both 532-nm subthreshold laser grid photocoagulation and threshold laser grid photocoagulation can improve the visual acuity and reduce CMT in DME patients. PMID:25697457

  12. Method 415.3, Rev. 1.2: Determination of Total Organic Carbon and Specific UV Absorbance at 254 nm in Source Water and Drinking Water

    EPA Science Inventory

    This method provides procedures for the determination of total organic carbon (TOC), dissolved organic carbon (DOC), and UV absorption at 254 nm (UVA) in source waters and drinking waters. The DOC and UVA determinations are used in the calculation of the Specific UV Absorbance (S...

  13. Combined 60° Wide-Field Choroidal Thickness Maps and High-Definition En Face Vasculature Visualization Using Swept-Source Megahertz OCT at 1050 nm

    PubMed Central

    Mohler, Kathrin J.; Draxinger, Wolfgang; Klein, Thomas; Kolb, Jan Philip; Wieser, Wolfgang; Haritoglou, Christos; Kampik, Anselm; Fujimoto, James G.; Neubauer, Aljoscha S.; Huber, Robert; Wolf, Armin

    2015-01-01

    Purpose To demonstrate ultrahigh-speed swept-source optical coherence tomography (SS-OCT) at 1.68 million A-scans/s for choroidal imaging in normal and diseased eyes over a ∼60° field of view. To investigate and correlate wide-field three-dimensional (3D) choroidal thickness (ChT) and vascular patterns using ChT maps and coregistered high-definition en face images extracted from a single densely sampled Megahertz-OCT (MHz-OCT) dataset. Methods High-definition, ∼60° wide-field 3D datasets consisting of 2088 × 1024 A-scans were acquired using a 1.68 MHz prototype SS-OCT system at 1050 nm based on a Fourier-domain mode-locked laser. Nine subjects (nine eyes) with various chorioretinal diseases or without ocular pathology are presented. Coregistered ChT maps, choroidal summation maps, and depth-resolved en face images referenced to either the retinal pigment epithelium or the choroidal–scleral interface were generated using manual segmentation. Results Wide-field ChT maps showed a large inter- and intraindividual variance in peripheral and central ChT. In only four of the nine eyes, the location with the largest ChT was coincident with the fovea. The anatomy of the large lumen vessels of the outer choroid seems to play a major role in determining the global ChT pattern. Focal ChT changes with large thickness gradients were observed in some eyes. Conclusions Different ChT and vascular patterns could be visualized over ∼60° in patients for the first time using OCT. Due to focal ChT changes, a high density of thickness measurements may be favorable. High-definition depth-resolved en face images are complementary to cross sections and thickness maps and enhance the interpretation of different ChT patterns. PMID:26431482

  14. Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density

    SciTech Connect

    Trinh, Hai-Dang; Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi ; Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho; Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia; Wang, Shin-Yuan; Yi Chang, Edward; Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan

    2013-09-30

    In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup −4} A/cm{sup −2}. The D{sub it} value of smaller than 10{sup 12} eV{sup −1}cm{sup −2} has been obtained using conduction method.

  15. Assignment of the 290-nm electronic band system of indazole [1,2-benzodiazole] as π ∗ - π by rotational band contour analysis

    NASA Astrophysics Data System (ADS)

    Cané, E.; Trombetti, A.; Velino, B.; Caminati, W.

    1992-10-01

    The 0 00 band of the S1- S0 electronic absorption system of indazole at 290 nm has been analyzed, and the results of the computer simulation of its rotational contour have shown that this band is and {A}/{B} hybrid with an intensity ratio {A}/{B} = 1.22 . The S1- S0 electronic system is assigned as Ã1A'(ππ ∗)- X˜1A' . The same result has already been reached for benzimidazole (E. Cané et al., J. Mol. Spectrosc.150, 222-228 (1991)), and other ring-condensed aza-aromatic compounds although the relative amount of the type B and A components is different in each band. The transition moment is in the molecular plane nearly equidistant from the a- and b-inertial axes ( θ = ±42°).

  16. Hybrid Laser-Arc Welding of 10-mm-Thick Cast Martensitic Stainless Steel CA6NM: As-Welded Microstructure and Mechanical Properties

    NASA Astrophysics Data System (ADS)

    Mirakhorli, Fatemeh; Cao, Xinjin; Pham, Xuan-Tan; Wanjara, Priti; Fihey, Jean-Luc

    2016-07-01

    Cast CA6NM martensitic stainless steel plates, 10 mm in thickness, were welded using hybrid laser-arc welding. The effect of different welding speeds on the as-welded joint integrity was characterized in terms of the weld bead geometry, defects, microstructure, hardness, ultimate tensile strength, and impact energy. Significant defects such as porosity, root humping, underfill, and excessive penetration were observed at a low welding speed (0.5 m/min). However, the underfill depth and excessive penetration in the joints manufactured at welding speeds above 0.75 m/min met the specifications of ISO 12932. Characterization of the as-welded microstructure revealed untempered martensite and residual delta ferrite dispersed at prior-austenite grain boundaries in the fusion zone. In addition, four different heat-affected zones in the weldments were differentiated through hardness mapping and inference from the Fe-Cr-Ni ternary phase diagram. The tensile fracture occurred in the base metal for all the samples and fractographic analysis showed that the crack path is within the martensite matrix, along primary delta ferrite-martensite interfaces and within the primary delta ferrite. Additionally, Charpy impact testing demonstrated slightly higher fracture energy values and deeper dimples on the fracture surface of the welds manufactured at higher welding speeds due to grain refinement and/or lower porosity.

  17. Hybrid Laser-Arc Welding of 10-mm-Thick Cast Martensitic Stainless Steel CA6NM: As-Welded Microstructure and Mechanical Properties

    NASA Astrophysics Data System (ADS)

    Mirakhorli, Fatemeh; Cao, Xinjin; Pham, Xuan-Tan; Wanjara, Priti; Fihey, Jean-Luc

    2016-04-01

    Cast CA6NM martensitic stainless steel plates, 10 mm in thickness, were welded using hybrid laser-arc welding. The effect of different welding speeds on the as-welded joint integrity was characterized in terms of the weld bead geometry, defects, microstructure, hardness, ultimate tensile strength, and impact energy. Significant defects such as porosity, root humping, underfill, and excessive penetration were observed at a low welding speed (0.5 m/min). However, the underfill depth and excessive penetration in the joints manufactured at welding speeds above 0.75 m/min met the specifications of ISO 12932. Characterization of the as-welded microstructure revealed untempered martensite and residual delta ferrite dispersed at prior-austenite grain boundaries in the fusion zone. In addition, four different heat-affected zones in the weldments were differentiated through hardness mapping and inference from the Fe-Cr-Ni ternary phase diagram. The tensile fracture occurred in the base metal for all the samples and fractographic analysis showed that the crack path is within the martensite matrix, along primary delta ferrite-martensite interfaces and within the primary delta ferrite. Additionally, Charpy impact testing demonstrated slightly higher fracture energy values and deeper dimples on the fracture surface of the welds manufactured at higher welding speeds due to grain refinement and/or lower porosity.

  18. Accelerated aging of 28 Gb s-1 850 nm vertical-cavity surface-emitting laser with multiple thick oxide apertures

    NASA Astrophysics Data System (ADS)

    Kropp, J. R.; Steinle, G.; Schäfer, G.; Shchukin, V. A.; Ledentsov, N. N.; Turkiewicz, J. P.; Zoldak, M.

    2015-04-01

    850 nm vertical-cavity surface-emitting lasers with multiple thick oxide apertures suitable for temperature-insensitive error free transmission at 28 Gb s-1 are subjected to accelerated aging at high current densities and chip temperatures. The devices withstand a 20% power change test at a high current density (18 kA c{{m}-2}) at an ambient temperature of 120 {}^\\circ C for 2500 h. At 90-95 {}^\\circ C at this current density no degradation was observed up to 5000 h. We performed the studies at further elevated current densities and temperatures and define the acceleration factor as AF={{({{J}stress}/{{J}use})}8}exp [(1.3 eV/{{k}B})(1/{{T}use}-1/{{T}stress})]. The extrapolated lifetime for 20% power drop is estimated as 20 thousand years at 300 K at current density of 18 kA c{{m}-2} which is sufficient for 28 Gb s-1 error-free temperature-insensitive data transmission.

  19. Sub-0.5 nm equivalent oxide thickness scaling for Si-doped Zr1-xHfxO2 thin film without using noble metal electrode.

    PubMed

    Ahn, Ji-Hoon; Kwon, Se-Hun

    2015-07-22

    The dielectric properties of the Si-doped Zr1-xHfxO2 thin films were investigated over a broad compositional range with the goal of improving their properties for use as DRAM capacitor materials. The Si-doped Zr1-xHfxO2 thin films were deposited on TiN bottom electrodes by atomic layer deposition using a TEMA-Zr/TEMA-Hf mixture precursor for deposition of Zr1-xHfxO2 film and Tris-EMASiH as a Si precursor. The Si stabilizer increased the tetragonality and the dielectric constant; however, at high fractions of Si, the crystal structure degraded to amorphous and the dielectric constant decreased. Doping with Si exhibited a larger influence on the dielectric constant at higher Hf content. A Si-doped Hf-rich Zr1-xHfxO2 thin film, with tetragonal structure, exhibited a dielectric constant of about 50. This is the highest value among all reported results for Zr and Hf oxide systems, and equivalent oxide thickness (EOT) value of under 0.5 nm could be obtained with a leakage current of under 10(-7) A·cm(-2), which is the lowest EOT value ever reported for a DRAM storage capacitor system without using a noble-metal-based electrode. PMID:26125098

  20. Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chu, L. K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.

    2011-07-01

    We investigated the passivation of In0.53Ga0.47As (001) surface by molecular beam epitaxy techniques. After growth of strained In0.53Ga0.47As on InP (001) substrate, HfO2/Al2O3 high-κ oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (Dit) of the Al2O3/In0.53Ga0.47As interface have been revealed by conductance measurement, indicating a downward Dit profile from the energy close to the valence band (medium 1012 cm-2eV-1) towards that close to the conduction band (1011 cm-2eV-1). The low Dit's are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO2 has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO2 thickness (dielectric constant of HfO2 ˜20) and the remained low Dit's due to the thin Al2O3 passivation layer. The sample with HfO2 (3.4 nm)/Al2O3 (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of ˜0.93 nm.

  1. Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

    SciTech Connect

    Chu, L. K.; Merckling, C.; Dekoster, J.; Caymax, M.; Alian, A.; Heyns, M.; Kwo, J.; Hong, M.

    2011-07-25

    We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

  2. Electronic Transitions of Jet-cooled SiC2, Si2Cn (n=1-3), Si3Cn (n = 1,2), and SiC6H4 between 250 and 710 nm

    NASA Astrophysics Data System (ADS)

    Steglich, M.; Maier, J. P.

    2015-03-01

    Electronic transitions of the title molecules were measured between 250 and 710 nm using a mass-resolved 1 + 1’ resonant two-photon ionization technique at a resolution of 0.1 nm. Calculations at the B3LYP/aug-cc-pVQZ level of theory support the analyses. Because of their spectral properties, SiC2, linear Si2C2, Si3C, and SiC6H4 are interesting target species for astronomical searches in the visible spectral region. Of special relevance is the Si-C2-Si chain, which features a prominent band at 516.4 nm of a strong transition (f = 0.25). This band and one from SiC6H4 at 445.3 nm were also investigated at higher resolution (0.002 nm).

  3. Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb{sub 2}O{sub 3}-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness

    SciTech Connect

    Lee, Ching-Wei; Wu, Yung-Hsien; Hsieh, Ching-Heng; Lin, Chia-Chun

    2014-11-17

    Through the technique of solid phase epitaxy (SPE), an epitaxial Ge{sub 0.955}Sn{sub 0.045} film was formed on a Ge substrate by depositing an amorphous GeSn film followed by a rapid thermal annealing at 550 °C. A process that uses a SiO{sub 2} capping layer on the amorphous GeSn film during SPE was proposed and it prevents Sn precipitation from occurring while maintaining a smooth surface due to the reduced surface mobility of Sn atoms. The high-quality epitaxial GeSn film was observed to have single crystal structure, uniform thickness and composition, and tiny surface roughness with root mean square of 0.56 nm. With a SnO{sub x}-free surface, Yb{sub 2}O{sub 3}-gated GeSn metal-oxide-semiconductor (MOS) capacitors with equivalent oxide thickness (EOT) of 0.55 nm were developed. A small amount of traps inside the Yb{sub 2}O{sub 3} was verified by negligible hysteresis in capacitance measurement. Low leakage current of 0.4 A/cm{sup 2} at gate bias of flatband voltage (V{sub FB})-1 V suggests the high quality of the gate dielectric. In addition, the feasibility of using Yb{sub 2}O{sub 3} to well passivate GeSn surface was also evidenced by the small interface trap density (D{sub it}) of 4.02 × 10{sup 11} eV{sup −1} cm{sup −2}, which can be attributed to smooth GeSn surface and Yb{sub 2}O{sub 3} valency passivation. Both leakage current and D{sub it} performance outperform other passivation techniques at sub-nm EOT regime. The proposed epitaxial GeSn film along with Yb{sub 2}O{sub 3} dielectric paves an alternative way to enable high-performance GeSn MOS devices.

  4. Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

    NASA Astrophysics Data System (ADS)

    Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Åke; Higuchi, Yuichi; Arimura, Hiroaki; Lee, Jae Woo; Simoen, Eddy; Cho, Moon Ju; Roussel, Philippe J.; Paraschiv, Vasile; Shi, Xiaoping; Schram, Tom; Aik Chew, Soon; Brus, Stephan; Dangol, Anish; Vecchio, Emma; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Conard, Thierry; Vaesen, Inge; Richard, Olivier; Bender, Hugo; Athimulam, Raja; Chiarella, Thomas; Thean, Aaron; Horiguchi, Naoto

    2014-01-01

    We report on aggressively scaled replacement metal gate, high-k last (RMG-HKL) planar and multi-gate fin field-effect transistor (FinFET) devices, systematically investigating the impact of post high-k deposition thermal (PDA) and plasma (SF6) treatments on device characteristics, and providing a deeper insight into underlying degradation mechanisms. We demonstrate that: 1) substantially reduced gate leakage (JG) and noise can be obtained for both type of devices with PDA and F incorporation in the gate stack by SF6, without equivalent oxide thickness (EOT) penalty; 2) SF6 enables improved mobility and reduced interface trapped charge density (Nit) down to narrower fin devices [fin width (WFin) ≥ 5 nm], mitigating the impact of fin patterning and fin sidewall crystal orientations, while allowing a simplified dual-effective work function (EWF) CMOS scheme suitable for both device architectures; 3) PDA yields smaller, in absolute values, PMOS threshold voltage |VT|, and substantially improved reliability behavior due to reduction of bulk defects.

  5. A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

    NASA Astrophysics Data System (ADS)

    Aizad Fatah, Faiz; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Calvin Hu, Chenming; Salahuddin, Sayeef; Chang, Edward Yi

    2016-02-01

    A 60-nm-thick E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69 mV/decade, a lower DIBL of 30 mV/V, an ION/IOFF ratio above 1.2 × 104 at VDS = 0.5 V and a high fT of 378 GHz and fmax of 214 GHz at VDS = 1.0 V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.

  6. Crystalline ZrTiO{sub 4} gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

    SciTech Connect

    Wu, Chao-Yi; Hsieh, Ching-Heng; Lee, Ching-Wei; Wu, Yung-Hsien

    2015-02-02

    ZrTiO{sub 4} crystallized in orthorhombic (o-) phase was stacked with an amorphous Yb{sub 2}O{sub 3} interfacial layer as the gate dielectric for Si-based p-MOSFETs. With thermal annealing after gate electrode, the gate stack with equivalent oxide thickness (EOT) of 0.82 nm achieves high dielectric quality by showing a low interface trap density (D{sub it}) of 2.75 × 10{sup 11 }cm{sup −2}eV{sup −1} near the midgap and low oxide traps. Crystallization of ZrTiO{sub 4} and post metal annealing are also proven to introduce very limited amount of metal induced gap states or interfacial dipole. The p-MOSFETs exhibit good sub-threshold swing of 75 mV/dec which is ascribed to the low D{sub it} value and small EOT. Owing to the Y{sub 2}O{sub 3} interfacial layer and smooth interface with Si substrate that, respectively, suppress phonon and surface roughness scattering, the p-MOSFETs also display high hole mobility of 49 cm{sup 2}/V-s at 1 MV/cm. In addition, I{sub on}/I{sub off} ratio larger than 10{sup 6} is also observed. From the reliability evaluation by negative bias temperature instability test, after stressing with an electric field of −10 MV/cm at 85 °C for 1000 s, satisfactory threshold voltage shift of 12 mV and sub-threshold swing degradation of 3% were obtained. With these promising characteristics, the Yb{sub 2}O{sub 3}/o-ZrTiO{sub 4} gate stack holds the great potential for next-generation electronics.

  7. Thickness-dependent bending modulus of hexagonal boron nitride nanosheets

    NASA Astrophysics Data System (ADS)

    Li, Chun; Bando, Yoshio; Zhi, Chunyi; Huang, Yang; Golberg, Dmitri

    2009-09-01

    Bending modulus of exfoliation-made single-crystalline hexagonal boron nitride nanosheets (BNNSs) with thicknesses of 25-300 nm and sizes of 1.2-3.0 µm were measured using three-point bending tests in an atomic force microscope. BNNSs suspended on an SiO2 trench were clamped by a metal film via microfabrication based on electron beam lithography. Calculated by the plate theory of a doubly clamped plate under a concentrated load, the bending modulus of BNNSs was found to increase with the decrease of sheet thickness and approach the theoretical C33 value of a hexagonal BN single crystal in thinner sheets (thickness<50 nm). The thickness-dependent bending modulus was suggested to be due to the layer distribution of stacking faults which were also thought to be responsible for the layer-by-layer BNNS exfoliation.

  8. Charge transport-accumulation in multilayer structures with Si{sub 3}N{sub 4} and thick(5.5 nm) SiO{sub 2}

    SciTech Connect

    Novikov, Yu. N.

    2015-04-21

    Double-injection, transport, and accumulation of charge in metal-thick oxide-nitride-silicon and silicon-tunnel oxide-nitride-thick oxide-silicon structures have been theoretically studied. Calculation results were compared to experimental results. The charge transport in Si{sub 3}N{sub 4} is quantitatively described assuming the multiphonon ionization theory of neutral traps with a capture cross-section less than 10{sup −14} cm{sup 2}. With traps amphoterism taken into account, the calculation predicts the existence of a layer with their excessive concentration near the SiO{sub 2}/Si{sub 3}N{sub 4} interface. The model satisfactorily describes the write/erase characteristics in silicon-oxide-nitride-oxide-silicon-structures from Bu and White (Solid-State Electron. 45, 113 (2001))

  9. Quasi-cw tissue transillumination at 1064 nm

    NASA Astrophysics Data System (ADS)

    Bernini, Umberto; Ramaglia, Antonio; Russo, Paolo

    1997-08-01

    An extended series of transillumination experiments has been performed in vitro on animal samples (bovine muscle, up to 30- mm-thick; chicken wing and quail femur, 12-mm-thick) and in vivo on the human hand (thickness, about 20 mm), using a pulsed light source (7 ns, about 10-4 J/pulse, 10 Hz rep rate) from a collimated (1.2 m) Nd:YAG laser beam (1064 nm). A PIN photodiode connected to a digital oscilloscope was used to measure the maximum intensity of the beam pulse transmitted through the sample (i.e., no temporal discrimination of the output signal was attempted) while it was scanned across the source/detector assembly. One dimensional scans were performed on bovine muscle samples in which thin metallic test objects were embedded, in order to study the spatial resolution of the technique (for bovine muscle at 1064 nm, absorption and reduced scattering coefficients are reported to be about 1 cm-1 and 3 cm-1, respectively). The measured spatial resolution was as good as 3.6 mm in 30 mm of tissue thickness. In the two-dimensional scans of the chicken and quail sample, fat and bone tissues can be easily seen with good resolution, whereas imaging of the middle finger of a human hand shows cartilaginoid and bone tissue with 1 - 2 mm resolution. Hence, this simple collimated quasi-cw technique gives significantly better results for tissue imaging than pure cw transillumination. Use of (pulsed) light above 1000 nm and a high energy content per pulse are supposed to explain the positive experimental findings.

  10. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

    SciTech Connect

    Fluteau, T.; Bessis, C.; Barraud, C. Della Rocca, M. L.; Lafarge, P.; Martin, P.; Lacroix, J.-C.

    2014-09-21

    We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

  11. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

    NASA Astrophysics Data System (ADS)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-01

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal–semiconductor–metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW‑1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W‑1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  12. Thick Toenails

    MedlinePlus

    ... be seen in individuals with nail fungus (onychomycosis), psoriasis, and hypothyroidism. Those who have problems with the thickness of their toenails should consult a foot and ankle surgeon for proper diagnosis and treatment. and or or and or or, browse by ...

  13. 1,2-Dichloropropane

    Integrated Risk Information System (IRIS)

    1,2 - Dichloropropane ; CASRN 78 - 87 - 5 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinoge

  14. 1,2-Dichloroethane

    Integrated Risk Information System (IRIS)

    1,2 - Dichloroethane ; CASRN 107 - 06 - 2 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinoge

  15. 1,2-Diphenylhydrazine

    Integrated Risk Information System (IRIS)

    1,2 - Diphenylhydrazine ; CASRN 122 - 66 - 7 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcin

  16. 1,2-Dichlorobenzene

    Integrated Risk Information System (IRIS)

    1,2 - Dichlorobenzene ; CASRN 95 - 50 - 1 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinoge

  17. 1,2-Dibromoethane

    Integrated Risk Information System (IRIS)

    1,2 - Dibromoethane ; CASRN 106 - 93 - 4 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogen

  18. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

    SciTech Connect

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-02-23

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.

  19. Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

    NASA Astrophysics Data System (ADS)

    Çörekçi, S.; Dugan, S.; Öztürk, M. K.; Çetin, S. Ş.; Çakmak, M.; Özçelik, S.; Özbay, E.

    2016-05-01

    Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (10bar{1} 2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (10bar{1} 2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm-2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.

  20. Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

    NASA Astrophysics Data System (ADS)

    Çörekçi, S.; Dugan, S.; Öztürk, M. K.; Çetin, S. Ş.; Çakmak, M.; Özçelik, S.; Özbay, E.

    2016-07-01

    Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (10bar{1}2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (10bar{1}2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm-2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.

  1. Improvement in thickness uniformity of thick SOI by numerically controlled local wet etching.

    PubMed

    Yamamura, Kazuya; Ueda, Kazuaki; Hosoda, Mao; Zettsu, Nobuyuki

    2011-04-01

    Silicon-on-insulator (SOI) wafers are promising semiconductor materials for high-speed LSIs, low-power-consumption electric devices and micro electro mechanical systems (MEMS). The thickness distribution of an SOI causes the variation of threshold voltage in electronic devices manufactured on the SOI wafer. The thickness distribution of a thin SOI, which is manufactured by applying a smart cut technique, is comparatively uniform. On the other hand, a thick SOI has a large thickness distribution because a bonded wafer is thinned by conventional grinding and polishing. For a thick SOI wafer with a thickness of 1 microm, it is required that the tolerance of thickness variation is less than 50 nm. However, improving the thickness uniformity of a thick SOI layer to a tolerance of +/- 5% is difficult by conventional machining because of the fundamental limitations of these techniques. We have developed numerically controlled local wet etching (NC-LWE) technique as a novel deterministic subaperture figuring and finishing technique, which utilizes a localized chemical reaction between the etchant and the surface of the workpiece. We demonstrated an improvement in the thickness distribution of a thick SOI by NC-LWE using an HF/HNO3 mixture, and thickness variation improved from 480 nm to 200 nm within a diameter of 170 mm. PMID:21776652

  2. Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G. F.; Henderson, C. C.; Goldsmith, J. E. M.; Mangat, P. J. S.; Cobb, J.; Hector, S. D.

    1999-11-01

    In two separate experiments, we have successfully demonstrated the transfer of dense- and loose-pitch line/space (L/S) photoresist features, patterned with extreme ultraviolet (EUV) lithography, into an underlying hard mask material. In both experiments, a deep-UV photoresist ({approx}90 nm thick) was spin cast in bilayer format onto a hard mask (50-90 nm thick) and was subsequently exposed to EUV radiation using a 10x reduction EUV exposure system. The EUV reticle was fabricated at Motorola (Tempe, AZ) using a subtractive process with Ta-based absorbers on Mo/Si multilayer mask blanks. In the first set of experiments, following the EUV exposures, the L/S patterns were transferred first into a SiO{sub 2} hard mask (60 nm thick) using a reactive ion etch (RIE), and then into polysilicon (350 nm thick) using a triode-coupled plasma RIE etcher at the University of California, Berkeley, microfabrication facilities. The latter etch process, which produced steep (>85 degree sign ) sidewalls, employed a HBr/Cl chemistry with a large (>10:1) etch selectivity of polysilicon to silicon dioxide. In the second set of experiments, hard mask films of SiON (50 nm thick) and SiO{sub 2} (87 nm thick) were used. A RIE was performed at Motorola using a halogen gas chemistry that resulted in a hard mask-to-photoresist etch selectivity >3:1 and sidewall profile angles {>=}85 degree sign . Line edge roughness (LER) and linewidth critical dimension (CD) measurements were performed using Sandia's GORA(c) CD digital image analysis software. Low LER values (6-9 nm, 3{sigma}, one side) and good CD linearity (better than 10%) were demonstrated for the final pattern-transferred dense polysilicon L/S features from 80 to 175 nm. In addition, pattern transfer (into polysilicon) of loose-pitch (1:2) L/S features with CDs{>=}60 nm was demonstrated. (c) 1999 American Vacuum Society.

  3. UV - ALBUQUERQUE NM

    EPA Science Inventory

    Brewer 109 is located in Albuquerque NM, measuring ultraviolet solar radiation. Irradiance and column ozone are derived from this data. Ultraviolet solar radiation is measured with a Brewer Mark IV, single-monochrometer, spectrophotometer manufactured by SCI-TEC Instruments, Inc....

  4. A unique approach to accurately measure thickness in thick multilayers.

    PubMed

    Shi, Bing; Hiller, Jon M; Liu, Yuzi; Liu, Chian; Qian, Jun; Gades, Lisa; Wieczorek, Michael J; Marander, Albert T; Maser, Jorg; Assoufid, Lahsen

    2012-05-01

    X-ray optics called multilayer Laue lenses (MLLs) provide a promising path to focusing hard X-rays with high focusing efficiency at a resolution between 5 nm and 20 nm. MLLs consist of thousands of depth-graded thin layers. The thickness of each layer obeys the linear zone plate law. X-ray beamline tests have been performed on magnetron sputter-deposited WSi(2)/Si MLLs at the Advanced Photon Source/Center for Nanoscale Materials 26-ID nanoprobe beamline. However, it is still very challenging to accurately grow each layer at the designed thickness during deposition; errors introduced during thickness measurements of thousands of layers lead to inaccurate MLL structures. Here, a new metrology approach that can accurately measure thickness by introducing regular marks on the cross section of thousands of layers using a focused ion beam is reported. This new measurement method is compared with a previous method. More accurate results are obtained using the new measurement approach. PMID:22514179

  5. Albuquerque, NM, USA

    NASA Technical Reports Server (NTRS)

    1991-01-01

    Albuquerque, NM (35.0N, 106.5W) is situated on the edge of the Rio Grande River and flood plain which cuts across the image. The reddish brown surface of the Albuquerque Basin is a fault depression filled with ancient alluvial fan and lake bed sediments. On the slopes of the Manzano Mountains to the east of Albuquerque, juniper and other timber of the Cibola National Forest can be seen as contrasting dark tones of vegetation.

  6. Accurate thickness measurement of graphene

    NASA Astrophysics Data System (ADS)

    Shearer, Cameron J.; Slattery, Ashley D.; Stapleton, Andrew J.; Shapter, Joseph G.; Gibson, Christopher T.

    2016-03-01

    Graphene has emerged as a material with a vast variety of applications. The electronic, optical and mechanical properties of graphene are strongly influenced by the number of layers present in a sample. As a result, the dimensional characterization of graphene films is crucial, especially with the continued development of new synthesis methods and applications. A number of techniques exist to determine the thickness of graphene films including optical contrast, Raman scattering and scanning probe microscopy techniques. Atomic force microscopy (AFM), in particular, is used extensively since it provides three-dimensional images that enable the measurement of the lateral dimensions of graphene films as well as the thickness, and by extension the number of layers present. However, in the literature AFM has proven to be inaccurate with a wide range of measured values for single layer graphene thickness reported (between 0.4 and 1.7 nm). This discrepancy has been attributed to tip-surface interactions, image feedback settings and surface chemistry. In this work, we use standard and carbon nanotube modified AFM probes and a relatively new AFM imaging mode known as PeakForce tapping mode to establish a protocol that will allow users to accurately determine the thickness of graphene films. In particular, the error in measuring the first layer is reduced from 0.1-1.3 nm to 0.1-0.3 nm. Furthermore, in the process we establish that the graphene-substrate adsorbate layer and imaging force, in particular the pressure the tip exerts on the surface, are crucial components in the accurate measurement of graphene using AFM. These findings can be applied to other 2D materials.

  7. Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides

    NASA Technical Reports Server (NTRS)

    Asenov, Asen; Saini, S.

    2000-01-01

    In this paper for the first time we study the influence of the polysilicon gate on the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs with tunnelling gate oxides. This is done by using an efficient 3D 'atomistic' simulation technique described elsewhere. Devices with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveale that the polysilicon gate is responsible for a substantial fraction of the threshold voltage fluctuations in both devices when the gate oxide is scaled to tunnelling thickness in the range of 1 - 2 nm.

  8. Searching Ultimate Nanometrology for AlOx Thickness in Magnetic Tunnel Junction by Analytical Electron Microscopy and X-ray Reflectometry

    NASA Astrophysics Data System (ADS)

    Song, Se Ahn; Hirano, Tatsumi; Park, Jong Bong; Kaji, Kazutoshi; Kim, Ki Hong; Terada, Shohei

    2005-10-01

    Practical analyses of the structures of ultrathin multilayers in tunneling magneto resistance (TMR) and Magnetic Random Access Memory (MRAM) devices have been a challenging task because layers are very thin, just 1-2 nm thick. Particularly, the thinness ([similar]1 nm) and chemical properties of the AlOx barrier layer are critical to its magnetic tunneling property. We focused on evaluating the current TEM analytical methods by measuring the thickness and composition of an AlOx layer using several TEM instruments, that is, a round robin test, and cross-checked the thickness results with an X-ray reflectometry (XRR) method. The thickness measured by using HRTEM, HAADF-STEM, and zero-loss images was 1.1 nm, which agreed with the results from the XRR method. On the other hand, TEM-EELS measurements showed 1.8 nm for an oxygen 2D-EELS image and 3.0 nm for an oxygen spatially resolved EELS image, whereas the STEM-EDS line profile showed 2.5 nm in thickness. However, after improving the TEM-EELS measurements by acquiring time-resolved images, the measured thickness of the AlOx layer was improved from 1.8 nm to 1.4 nm for the oxygen 2D-EELS image and from 3.0 nm to 2.0 nm for the spatially resolved EELS image, respectively. Also the observed thickness from the EDS line profile was improved to 1.4 nm after more careful optimization of the experimental parameters. We found that EELS and EDS of one-dimensional line scans or two-dimensional elemental mapping gave a larger AlOx thickness even though much care was taken. The reasons for larger measured values can be found from several factors such as sample drift, beam damage, probe size, beam delocalization, and multiple scattering for the EDS images, and chromatic aberration, diffraction limit due to the aperture, delocalization, alignment between layered direction in samples, and energy dispersion direction in the EELS instrument for EELS images. In the case of STEM-EDS mapping with focused nanoprobes, it is always necessary

  9. Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors

    NASA Astrophysics Data System (ADS)

    Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo

    2014-12-01

    Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK-1 which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D*) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 108 and 1.83 × 108 cm Hz1/2 W-1 for sensors of 52 nm thick poly-Si, and 5.75 × 107 and 3.95 × 107 cm Hz1/2 W-1 for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology.Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm

  10. Anisotropic Molecular Orientation of Poly [4, 4'-oxydiphenylene- 1, 2, 3, 4-cyclobutanetetracarboximide] Films Irradiated by Linearly Polarized UV Light

    NASA Astrophysics Data System (ADS)

    Sakamoto, Kenji; Usami, Kiyoaki; Araya, Takeshi; Ushioda, Sukekatsu

    1999-12-01

    We have investigated the anisotropic molecular orientation of poly [4, 4'-oxydiphenylene-1, 2, 3, 4-cyclobutanetetracarboximide] (CBDA-ODA) films induced by irradiation with linearly polarized ultraviolet light (LPUVL). The molecular orientation was monitored by measuring the polarized infrared (IR) absorption spectra of a 10-nm-thick film. The anisotropy of the molecular orientation exceeded that of a rubbed film with the same film thickness. From the LPUVL exposure dependence of IR absorption we found that preferential cleavage occurs to the cyclobutane ring in the polyimide backbone structure oriented parallel to the polarization direction of LPUVL. Then the orientation of the cleaved polyimide molecule is randomized. We conclude that the large anisotropy of the LPUVL-exposed film is caused by the anisotropic cleavage of the cyclobutane rings and the orientational randomization of the cleaved polyimide molecules.

  11. Visualizing depth and thickness of a local blood region in skin tissue using diffuse reflectance images.

    PubMed

    Nishidate, Izumi; Maeda, Takaaki; Aizu, Yoshihisa; Niizeki, Kyuichi

    2007-01-01

    A method is proposed for visualizing the depth and thickness distribution of a local blood region in skin tissue using diffuse reflectance images at three isosbestic wavelengths of hemoglobin: 420, 585, and 800 nm. Monte Carlo simulation of light transport specifies a relation among optical densities, depth, and thickness of the region under given concentrations of melanin in epidermis and blood in dermis. Experiments with tissue-like agar gel phantoms indicate that a simple circular blood region embedded in scattering media can be visualized with errors of 6% for the depth and 22% for the thickness to the given values. In-vivo measurements on human veins demonstrate that results from the proposed method agree within errors of 30 and 19% for the depth and thickness, respectively, with values obtained from the same veins by the conventional ultrasound technique. Numerical investigation with the Monte Carlo simulation of light transport in the skin tissue is also performed to discuss effects of deviation in scattering coefficients of skin tissue and absorption coefficients of the local blood region from the typical values of the results. The depth of the local blood region is over- or underestimated as the scattering coefficients of epidermis and dermis decrease or increase, respectively, while the thickness of the region agrees well with the given values below 1.2 mm. Decreases or increases of hematocrit value give over- or underestimation of the thickness, but they have almost no influence on the depth. PMID:17994894

  12. Volume polarization holographic recording in thick phenanthrenequinone-doped poly(methyl methacrylate) photopolymer.

    PubMed

    Lin, Shiuan Huei; Chen, Po-Lin; Chuang, Chun-I; Chao, Yu-Faye; Hsu, Ken Y

    2011-08-15

    Volume polarization holographic recording in phenanthrenequinone-doped poly (methyl methacrylate) photopolymer is obtained. Photoinduced birefringence in a 2 mm thick sample is measured by a phase-modulated ellipsometry. The birefringence induced in this material by linearly polarized beam at 514 nm reaches 1.2×10(-5). In addition, ability for recording volume polarization grating using two different polarization configurations is demonstrated and compared. The experimental results show that the diffraction efficiency of the hologram reaches to ∼40% by using two orthogonal circularly polarized beams. PMID:21847152

  13. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector.

    PubMed

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-12

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW(-1) and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 10(10) cm Hz(1/2) W(-1) at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum. PMID:27354428

  14. 1,2,4-Tribromobenzene

    Integrated Risk Information System (IRIS)

    1,2,4 - Tribromobenzene ; CASRN 615 - 54 - 3 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcin

  15. 1,2,3-Trichloropropane

    Integrated Risk Information System (IRIS)

    1,2,3 - Trichloropropane ; CASRN 96 - 18 - 4 Human health assessment information on a chemical substance is included in IRIS only after a comprehensive review of toxicity data by U.S . EPA health scientists from several program offices , regional offices , and the Office of Research and Development

  16. trans-1,2-Dichloroethylene

    Integrated Risk Information System (IRIS)

    trans - 1,2 - Dichloroethylene ; CASRN 156 - 60 - 5 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for No

  17. 1,1,2-Trichloropropane

    Integrated Risk Information System (IRIS)

    1,1,2 - Trichloropropane ; CASRN 598 - 77 - 6 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarci

  18. 1,1,2-Trichloroethane

    Integrated Risk Information System (IRIS)

    1,1,2 - Trichloroethane ; CASRN 79 - 00 - 5 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcino

  19. 1,2,4-Trichlorobenzene

    Integrated Risk Information System (IRIS)

    1,2,4 - Trichlorobenzene ; CASRN 120 - 82 - 1 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarci

  20. cis-1,2-Dichloroethylene

    Integrated Risk Information System (IRIS)

    cis - 1,2 - Dichloroethylene ; CASRN 156 - 59 - 2 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Nonc

  1. 1,2-Epoxybutane (EBU)

    Integrated Risk Information System (IRIS)

    1,2 - Epoxybutane ( EBU ) ; CASRN 106 - 88 - 7 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarc

  2. Holographic recording in acrylamide photopolymers: thickness limitations.

    PubMed

    Mahmud, Mohammad Sultan; Naydenova, Izabela; Pandey, Nitesh; Babeva, Tzwetanka; Jallapuram, Raghavendra; Martin, Suzanne; Toal, Vincent

    2009-05-10

    Holographic recording in thick photopolymer layers is important for application in holographic data storage, volume holographic filters, and correlators. Here, we studied the characteristics of acrylamide-based photopolymer layers ranging in thickness from 250 microm to 1 mm. For each thickness, samples with three different values of absorbance were studied. By measuring the diffraction efficiency growth of holographically recorded gratings and studying the diffraction patterns obtained, the influence of scattering on the diffraction efficiency of thick volume holographic gratings was analyzed. It was found that, above a particular thickness and absorbance, the diffraction efficiency significantly decreased because of increased holographic scattering. From the diffraction efficiency dependence on absorbance and thickness it is possible to choose photopolymer layer properties that are suitable for a particular holographic application. This study was carried out to determine the highest layer thickness that could be used for phase code multiplexed holographic data storage utilizing thick photopolymer layers as a recording medium. Based on our studies to date we believe that the layer to be used for phase coded reference beam recording with 0.1 absorbance at 532 nm can have a thickness up to 450 microm. The potential use of thicker layers characterized by low scattering losses is part of our continuing research. PMID:19424384

  3. 147-nm photolysis of disilane

    SciTech Connect

    Perkins, G.G.A.; Lampe, F.W.

    1980-05-21

    The photodecomposition of Si/sub 2/H/sub 6/ at 147 nm results in the formation of H/sub 2/, SiH/sub 4/, Si/sub 3/H/sub 8/, Si/sub 4/H/sub 10/, Si/sub 5/H/sub 12/, and a solid film of amorphous silicon hydride (a-Si:H). Three primary processes are proposed to account for the results, namely, (a) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. SiH/sub 2/ + SiH/sub 3/ + H (phi/sub a/ = 0.61); (b) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. SiH/sub 3/SiH + 2H (phi/sub b/ = 0.18); (c) Si/sub 2/H/sub 6/ + h..nu.. ..-->.. Si/sub 2/H/sub 5/ + H (phi/sub c/ = 0.21). The overall quantum yields depend on the pressure but at 1 Torr partial pressure of Si/sub 2/H/sub 6/ are PHI(-Si/sub 2/H/sub 6/) = 4.3 +- 0.2, PHI(SiH/sub 4/) = 1.2 +- 0.4, PHI(Si/sub 3/H/sub 8/) = 0.91 +- 0.08, PHI(Si/sub 4/H/sub 10/) = 0.62 +- 0.03, PHI(Si,wall) = 2.2. Quantum yields for H/sub 2/ formation were not measured. A mechanism is proposed which is shown to be in accord with the experimental facts.

  4. 14 CFR 1.2 - Abbreviations and symbols.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... Federal Register citations affecting § 1.2, see the List of CFR Sections Affected, which appears in the...) means nondirectional beacon (automatic direction finder). NM means nautical mile. NOPAC means North... Tracking and Reporting System. RAIL means runway alignment indicator light system. RBN means radio...

  5. 14 CFR 1.2 - Abbreviations and symbols.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... Federal Register citations affecting § 1.2, see the List of CFR Sections Affected, which appears in the...) means nondirectional beacon (automatic direction finder). NM means nautical mile. NOPAC means North... Tracking and Reporting System. RAIL means runway alignment indicator light system. RBN means radio...

  6. 14 CFR 1.2 - Abbreviations and symbols.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... Federal Register citations affecting § 1.2, see the List of CFR Sections Affected, which appears in the...) means nondirectional beacon (automatic direction finder). NM means nautical mile. NOPAC means North... Tracking and Reporting System. RAIL means runway alignment indicator light system. RBN means radio...

  7. Electron Beam Lithography of 15×15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

    NASA Astrophysics Data System (ADS)

    Komori, Takuya; Zhang, Hui; Akahane, Takashi; Mohamad, Zulfakri; Yin, You; Hosaka, Sumio

    2012-06-01

    We investigated the effects of developer and hydrogen silsesquioxane (HSQ) resist thickness in the formation of dot arrays with a pitch of <18×18 nm2 by using 30-keV electron beam (EB) lithography for bit patterned media (BPM). Optimum resist thickness and developer were investigated for the formation of fine dot arrays. We found that a 12-nm-thick HSQ resist was suitable to form fine dot patterns and the addition of NaCl into tetramethylammonium hydroxide (TMAH) could improve the development contrast (γ-value) of HSQ (the highest is 9.7). By using the 12-nm-thick HSQ resist film and 2.3 wt % TMAH/4 wt % NaCl developer, we successfully fabricated very fine resist dot arrays with a dot size of <10 nm and a pitch of 15×15 nm2, which corresponds to a storage density of about 3 Tbit/in.2 in BPM.

  8. Corneal thickness in glaucoma.

    PubMed

    De Cevallos, E; Dohlman, C H; Reinhart, W J

    1976-02-01

    The central corneal stromal thickness of patients with open angle glaucoma, secondary glaucoma (the majority aphakic), or a history of unilateral acute angle closure glaucoma were measured and compared with the stromal thickness of a group of normal patients. In open angle glaucoma, there was a small but significant increase in the average stromal thickness. This thickness increase was, in all likelihood, due to an abnormal function of the endothelium in this disease since the level of the intraocular pressure did not seem to be a factor. There was no correlation between stromal thickness and duration of the glaucoma or type of anti-glaucomatous medication. Most cases of secondary glaucome, controlled medically or not, had markedly increased corneal thickness, again, most likely, due to endothelial damage rather than to level of intraocular pressure. After an angle closure attack, permanent damage to the cornea was found to be rare. PMID:1247273

  9. Lead Thickness Measurements

    SciTech Connect

    Rucinski, R.; /Fermilab

    1998-02-16

    The preshower lead thickness applied to the outside of D-Zero's superconducting solenoid vacuum shell was measured at the time of application. This engineering documents those thickness measurements. The lead was ordered in sheets 0.09375-inch and 0.0625-inch thick. The tolerance on thickness was specified to be +/- 0.003-inch. The sheets all were within that thickness tolerance. The nomenclature for each sheet was designated 1T, 1B, 2T, 2B where the numeral designates it's location in the wrap and 'T' or 'B' is short for 'top' or 'bottom' half of the solenoid. Micrometer measurements were taken at six locations around the perimeter of each sheet. The width,length, and weight of each piece was then measured. Using an assumed pure lead density of 0.40974 lb/in{sup 3}, an average sheet thickness was calculated and compared to the perimeter thickness measurements. In every case, the calculated average thickness was a few mils thinner than the perimeter measurements. The ratio was constant, 0.98. This discrepancy is likely due to the assumed pure lead density. It is not felt that the perimeter is thicker than the center regions. The data suggests that the physical thickness of the sheets is uniform to +/- 0.0015-inch.

  10. Optimization of Metal Oxides Thickness and Related Organic Electroluminescent Device Performance.

    PubMed

    Chiu, Tien-Lung; Chuang, Ya-Ting

    2015-11-01

    In this study, three commercial transition metal oxides such as molybdenum trioxide (MoO3), tungsten trioxide (WO3), and vanadium pent-oxide (V2O5) were employed as hole-injection layer to improve the electrical and optical performance of organic light-emitting diodes (OLEDs). The layer thickness of MoO3, WO3 and V2O5 were respectively varied by 1, 2, 5 and 10 nm inside blue OLED to characterize their effects on device performance. The optimal OLED with a 5 nm MoO3 hole-injection layer performs an enhancement of 12.9% in current efficiency, 17.5% in power efficiency and 9.3% in maximum external quantum efficiency, comparing to that of reference device without hole-injection layer. PMID:26726669

  11. Thick film hydrogen sensor

    DOEpatents

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  12. Thick film hydrogen sensor

    DOEpatents

    Hoffheins, B.S.; Lauf, R.J.

    1995-09-19

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

  13. Education and "Thick" Epistemology

    ERIC Educational Resources Information Center

    Kotzee, Ben

    2011-01-01

    In this essay Ben Kotzee addresses the implications of Bernard Williams's distinction between "thick" and "thin" concepts in ethics for epistemology and for education. Kotzee holds that, as in the case of ethics, one may distinguish between "thick" and "thin" concepts of epistemology and, further, that this distinction points to the importance of…

  14. Single virus particle mass detection using microresonators with nanoscale thickness

    NASA Astrophysics Data System (ADS)

    Gupta, A.; Akin, D.; Bashir, R.

    2004-03-01

    In this letter, we present the microfabrication and application of arrays of silicon cantilever beams as microresonator sensors with nanoscale thickness to detect the mass of individual virus particles. The dimensions of the fabricated cantilever beams were in the range of 4-5 μm in length, 1-2 μm in width and 20-30 nm in thickness. The virus particles we used in the study were vaccinia virus, which is a member of the Poxviridae family and forms the basis of the smallpox vaccine. The frequency spectra of the cantilever beams, due to thermal and ambient noise, were measured using a laser Doppler vibrometer under ambient conditions. The change in resonant frequency as a function of the virus particle mass binding on the cantilever beam surface forms the basis of the detection scheme. We have demonstrated the detection of a single vaccinia virus particle with an average mass of 9.5 fg. These devices can be very useful as components of biosensors for the detection of airborne virus particles.

  15. Interlayer thickness dependence of 90° exchange coupling in Co2MnAl/Cr/Co2MnAl epitaxial trilayer structures

    NASA Astrophysics Data System (ADS)

    Bosu, S.; Sakuraba, Y.; Saito, K.; Wang, H.; Mitani, S.; Takanashi, K.; You, C. Y.; Hono, K.

    2009-04-01

    The spacer layer thickness dependence of interlayer exchange coupling has been investigated in the fully epitaxial trilayers of the Co2MnAl (CMA)/Cr/CMA structure. A series of high-quality samples of CMA (20 nm)/Cr (tCr=0.3-8.1 nm)/CMA (10 nm) trilayers was prepared on a MgO substrate by ultrahigh vacuum compatible dc sputtering. Comparison of the results of the experiments and the simulations of magnetization curves revealed novel behavior, dominating the 90° coupling and the absence of 180° coupling. No clear oscillation, only a peak of the 90° coupling strength (J2˜-0.68 erg/cm2), was observed at tCr=1.2 nm.

  16. Flash-lamp pumped Pr:YAP laser operated at wavelengths of 747 nm and 662 nm

    NASA Astrophysics Data System (ADS)

    Fibrich, Martin; Jelínková, Helena; Šulc, Jan; Nejezchleb, Karel; Škoda, Václav

    2009-02-01

    Successful room-temperature generation of Pr:YAP laser radiation at wavelengths of 747 nm and 662 nm was demonstrated. A flash-lamp pumped Pr:YAP laser was operated in free-running pulsed regime at room temperature. Permanent laser action was reached by means of a special UV color glass plate filter placed directly into the laser cavity. The maximum output energy and pulse length reached at wavelengths of 747 nm and 662 nm were 102 mJ, 92 μs and 6.1 mJ, 47.5 μs, respectively. The laser beam parameter M2 ~ 1.5 was measured when the 662 nm wavelength was generated. In the case of 747 nm wavelength generation, M2 ~ 1.2 was reached with a diaphragm inside the resonator. For different pumped energy values, the line shape and linewidth remained stable for both cases.

  17. 469nm Fiber Laser Source

    SciTech Connect

    Drobshoff, A; Dawson, J W; Pennington, D M; Payne, S A; Beach, R

    2005-01-20

    We have demonstrated 466mW of 469nm light from a frequency doubled continuous wave fiber laser. The system consisted of a 938nm single frequency laser diode master oscillator, which was amplified in two stages to 5 Watts using cladding pumped Nd{sup 3+} fiber amplifiers and then frequency doubled in a single pass through periodically poled KTP. The 3cm long PPKTP crystal was made by Raicol Crystals Ltd. with a period of 5.9 {micro}m and had a phase match temperature of 47 degrees Centigrade. The beam was focused to a 1/e{sup 2} diameter in the crystal of 29 {micro}m. Overall conversion efficiency was 11% and the results agreed well with standard models. Our 938nm fiber amplifier design minimizes amplified spontaneous emission at 1088nm by employing an optimized core to cladding size ratio. This design allows the 3-level transition to operate at high inversion, thus making it competitive with the 1088nm 4-level transition. We have also carefully chosen the fiber coil diameter to help suppress propagation of wavelengths longer than 938 nm. At 2 Watts, the 938nm laser had an M{sup 2} of 1.1 and good polarization (correctable with a quarter and half wave plate to >10:1).

  18. Origami of thick panels

    NASA Astrophysics Data System (ADS)

    Chen, Yan; Peng, Rui; You, Zhong

    2015-07-01

    Origami patterns, including the rigid origami patterns in which flat inflexible sheets are joined by creases, are primarily created for zero-thickness sheets. In order to apply them to fold structures such as roofs, solar panels, and space mirrors, for which thickness cannot be disregarded, various methods have been suggested. However, they generally involve adding materials to or offsetting panels away from the idealized sheet without altering the kinematic model used to simulate folding. We develop a comprehensive kinematic synthesis for rigid origami of thick panels that differs from the existing kinematic model but is capable of reproducing motions identical to that of zero-thickness origami. The approach, proven to be effective for typical origami, can be readily applied to fold real engineering structures.

  19. Measuring coal thickness

    NASA Technical Reports Server (NTRS)

    Barker, C.; Blaine, J.; Geller, G.; Robinson, R.; Summers, D.; Tyler, J.

    1980-01-01

    Laboratory tested concept, for measuring thickness of overhead coal using noncontacting sensor system coupled to controller and high pressure water jet, allows mining machines to remove virtually all coal from mine roofs without danger of cutting into overlying rock.

  20. Importance of Corneal Thickness

    MedlinePlus

    ... News About Us Donate In This Section The Importance of Corneal Thickness email Send this article to ... is important because it can mask an accurate reading of eye pressure, causing doctors to treat you ...

  1. United States crustal thickness

    NASA Technical Reports Server (NTRS)

    Allenby, R. J.; Schnetzler, C. C.

    1983-01-01

    The thickness of the crust, the thickness of the basal (intermediate or lower) crustal layer, and the average velocity at the top of the mantle have been mapped using all available deep-penetrating seismic-refraction profiles in the conterminous United States and surrounding border areas. These profiles are indexed to their literature data sources. The more significant long wavelength anomalies on the three maps are briefly discussed and analyzed. An attempt to use Bouguer gravity to validate mantle structure was inconclusive.

  2. Detection limits of 405 nm and 633 nm excited PpIX fluorescence for brain tumor detection during stereotactic biopsy

    NASA Astrophysics Data System (ADS)

    Markwardt, Niklas; Götz, Marcus; Haj-Hosseini, Neda; Hollnburger, Bastian; Sroka, Ronald; Stepp, Herbert; Zelenkov, Petr; Rühm, Adrian

    2016-04-01

    5-aminolevulinic-acid-(5-ALA)-induced protoporphyrin IX (PpIX) fluorescence may be used to improve stereotactic brain tumor biopsies. In this study, the sensitivity of PpIX-based tumor detection has been investigated for two potential excitation wavelengths (405 nm, 633 nm). Using a 200 μm fiber in contact with semi-infinite optical phantoms containing ink and Lipovenös, PpIX detection limits of 4.0 nM and 200 nM (relating to 1 mW excitation power) were determined for 405 nm and 633 nm excitation, respectively. Hence, typical PpIX concentrations in glioblastomas of a few μM should be well detectable with both wavelengths. Additionally, blood layers of selected thicknesses were placed between fiber and phantom. Red excitation was shown to be considerably less affected by blood interference: A 50 μm blood layer, for instance, blocked the 405- nm-excited fluorescence completely, but reduced the 633-nm-excited signal by less than 50%. Ray tracing simulations demonstrated that - without blood layer - the sensitivity advantage of 405 nm rises for decreasing fluorescent volume from 50-fold to a maximum of 100-fold. However, at a tumor volume of 1 mm3, which is a typical biopsy sample size, the 633-nm-excited fluorescence signal is only reduced by about 10%. Further simulations revealed that with increasing fiber-tumor distance, the signal drops faster for 405 nm. This reduces the risk of detecting tumor tissue outside the needle's coverage, but diminishes the overlap between optically and mechanically sampled volumes. While 405 nm generally offers a higher sensitivity, 633 nm is more sensitive to distant tumors and considerably superior in case of blood-covered tumor tissue.

  3. Evaluation of dental pulp repair using low level laser therapy (688 nm and 785 nm) morphologic study in capuchin monkeys

    NASA Astrophysics Data System (ADS)

    Pretel, H.; Oliveira, J. A.; Lizarelli, R. F. Z.; Ramalho, L. T. O.

    2009-02-01

    The aim of this study was to evaluate the hypothesis that low-level laser therapy (LLLT) 688 nm and 785 nm accelerate dentin barrier formation and repair process after traumatic pulp exposure. The sample consisted of 45 premolars of capuchin monkeys (Cebus apella) with pulp exposure Class V cavities. All premolars were treated with calcium hydroxide (Ca(OH)2), divided in groups of 15 teeth each, and analyzed on 7th, 25th, and 60th day. Group GI - only Ca(OH)2, GII - laser 688 nm, and GIII - laser 785 nm. Laser beam was used in single and punctual dose with the parameters: continuous, 688 nm and 785 nm wavelength, tip's area of 0.00785 cm2, power 50 mW, application time 20 s, dose 255 J/cm2, energy 2 J. Teeth were capped with Ca(OH)2, Ca(OH)2 cement and restored with amalgam. All groups presented pulp repair. On 25th day the thickness of the formed dentin barrier was different between the groups GI and GII (p < 0.05) and between groups GI and GIII (p < 0.01). On 60th day there was difference between GI and GIII (p < 0.01). It may be concluded that, LLLT 688 nm and 785 nm accelerated dentin barrier formation and consequently pulp repair process, with best results using infrared laser 785 nm.

  4. Effect of Magnetic Film Thickness on the Spatial Resolution of Magnetic Force Microscope Tips

    NASA Astrophysics Data System (ADS)

    Nagano, Katsumasa; Tobari, Kousuke; Ohtake, Mitsuru; Futamoto, Masaaki

    2011-07-01

    Magnetic force microscope (MFM) tips were prepared by coating commercial atomic force microscope (AFM) tips of 5 nm radius with Co and CoCrPt magnetic thin films varying the thickness in a range of 10-80 nm. The structural and the magnetic properties of coated magnetic thin films were investigated by scanning electron microscopy, AFM, X-ray diffraction, and vibrating sample magnetometry. The tip radius and the film surface roughness increase with increasing the film thickness. With increasing the film thickness, the MFM signal sensitivity increases, whereas the resolution decreases due to increase of tip radius. The MFM observation resolutions of 10 nm and 23 nm are obtained with the tips coated with 20-nm-thick Co and 40-nm-thick CoCrPt films, respectively. The MFM resolution is influenced by both the tip radius and the magnetic moment of coated material.

  5. Critical thickness for the agglomeration of thin metal films

    SciTech Connect

    Boragno, C.; Buatier de Mongeot, F.; Felici, R.; Robinson, I.K.

    2009-09-15

    A thin metal film can exist in a metastable state with respect to breaking into small clusters. In this paper we report on grazing incidence small-angle x-ray scattering studies carried out in situ during the annealing of thin Ni films, between 2 and 10 nm thick, deposited on an amorphous SiO{sub 2} substrate. Our results show the presence of two different regimes which depend on the initial film thickness. For thicknesses less than 5 nm the annealing results in the formation of small, compact clusters on top of a residual Ni wetting layer. For thicknesses greater than 5 nm the film breaks into large, well-separated clusters and the substrate shows an uncovered clean surface.

  6. Fabricating nanopores with diameters of sub-1 nm to 3 nm using multilevel pulse-voltage injection

    PubMed Central

    Yanagi, Itaru; Akahori, Rena; Hatano, Toshiyuki; Takeda, Ken-ichi

    2014-01-01

    To date, solid-state nanopores have been fabricated primarily through a focused-electronic beam via TEM. For mass production, however, a TEM beam is not suitable and an alternative fabrication method is required. Recently, a simple method for fabricating solid-state nanopores was reported by Kwok, H. et al. and used to fabricate a nanopore (down to 2 nm in size) in a membrane via dielectric breakdown. In the present study, to fabricate smaller nanopores stably—specifically with a diameter of 1 to 2 nm (which is an essential size for identifying each nucleotide)—via dielectric breakdown, a technique called “multilevel pulse-voltage injection” (MPVI) is proposed and evaluated. MPVI can generate nanopores with diameters of sub-1 nm in a 10-nm-thick Si3N4 membrane with a probability of 90%. The generated nanopores can be widened to the desired size (as high as 3 nm in diameter) with sub-nanometre precision, and the mean effective thickness of the fabricated nanopores was 3.7 nm. PMID:24847795

  7. Optimization of EUVL reticle thickness for image placement accuracy

    NASA Astrophysics Data System (ADS)

    Zheng, Liang; Mikkelson, Andrew R.; Abdo, Amr Y.; Engelstad, Roxann L.; Lovell, Edward G.; White, Thomas J.

    2003-12-01

    Extreme ultraviolet lithography (EUVL) is one of the leading candidates for next-generation lithography in the sub-65 nm regime. The International Technology Roadmap for Semiconductors proposes overlay error budgets of 18 nm and 13 nm for the 45 nm and 32 nm nodes, respectively. Full three-dimensional finite element (FE) models were developed to identify the optimal mask thickness to minimize image placement (IP) errors. Five thicknesses of the EUVL reticle have been investigated ranging from 2.3 mm to 9.0 mm. The mask fabrication process was simulated, as well as the e-beam mounting, pattern transfer, and exposure mounting, utilizing FE structural models. Out-of-plane distortions and in-plane distortions were tracked for each process step. Both electrostatic and 3-point mounts were considered for the e-beam tool and exposure tool. In this case, increasing the thickness of the reticle will reduce the magnitude of the distortions. The effect of varying the reticle thickness on chucking was also studied. FE models were utilized to predict how changing the reticle thickness would affect the overall clamping response. By decreasing the reticle thickness (and therefore the effective bending stiffness), the deformed reticle is easier to flatten during chucking. In addition, the thermomechanical response of the reticle during exposure was investigated for different reticle thicknesses. Since conduction to the chuck is the main heat dissipation mechanism, decreasing the reticle thickness results in more energy being conducted away from the reticle, which reduces the maximum temperature rise and the corresponding thermal distortion. The FE simulations illustrate the optimal thickness to keep IP errors within the allotted error budget as well as provide the necessary flatness during typical chucking procedures.

  8. Liquid thickness gauge

    NASA Technical Reports Server (NTRS)

    Weinstein, Leonard M. (Inventor)

    1988-01-01

    A method and apparatus are developed to measure the thickness of a liquid on a surface independent of liquid conductivity. Two pairs of round, corrosion resistant wires are mounted in an insulating material such that the cross-sectional area of each wire is flush with and normal to the surface. The resistance between each pair of wires is measured using two ac resistance measuring circuits, in which the ratio of the outputs of the two resistance measuring circuits is indicative of the thickness of the liquid on the surface.

  9. Side Elevation, End Elevation, Cross Section, 1/2 Roof Plan, 1/2 ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Side Elevation, End Elevation, Cross Section, 1/2 Roof Plan, 1/2 Reflected Plan, 1/2 Floor Plan, 1/2 Reflected Plan - Jack's Mill Covered Bridge, Spanning Henderson Creek, Oquawka, Henderson County, IL

  10. Deep ultraviolet (254 nm) focal plane array

    NASA Astrophysics Data System (ADS)

    Cicek, Erdem; Vashaei, Zahra; McClintock, Ryan; Razeghi, Manijeh

    2011-10-01

    We report the synthesis, fabrication and testing of a 320 × 256 focal plane array (FPA) of back-illuminated, solarblind, p-i-n, AlxGa1-xN-based detectors, fully realized within our research laboratory. We implemented a novel pulsed atomic layer deposition technique for the metalorganic chemical vapor deposition (MOCVD) growth of crackfree, thick, and high Al composition AlxGa1-xN layers. Following the growth, the wafer was processed into a 320 × 256 array of 25 μm × 25 μm pixels on a 30 μm pixel-pitch and surrounding mini-arrays. A diagnostic mini-array was hybridized to a silicon fan-out chip to allow the study of electrical and optical characteristics of discrete pixels of the FPA. At a reverse bias of 1 V, an average photodetector exhibited a low dark current density of 1.12×10-8 A/cm2. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower and falling off three orders of magnitude by 285 nm. After indium bump deposition and dicing, the FPA is hybridized to a matching ISC 9809 readout integrated circuit (ROIC). By developing a novel masking technology, we significantly reduced the visible response of the ROIC and thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allowed the FPA to achieve high external quantum efficiency (EQE): at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of ~37%. Finally, the uniformity of the FPA and imaging properties are investigated.

  11. Evaluation of the Diode laser (810nm,980nm) on dentin tubule diameter following internal bleaching

    PubMed Central

    Kiomarsi, Nazanin; Salim, Soheil; Sarraf, Pegah; Javad-Kharazifard, Mohammad

    2016-01-01

    Background The aim of this study was to evaluate the effect of diode laser irradiation and bleaching materials on the dentinal tubule diameter after laser bleaching. Material and Methods The dentin discs of 40 extracted third molar were used in this experiment. Each disc surface was divided into two halves by grooving. Half of samples were laser bleached at different wavelengths with two different concentrations of hydrogen peroxide. Other half of each disc with no laser bleaching remained as a negative control. Dentin discs were assigned randomly into four groups (n=10) with following hydrogen peroxide and diode laser wavelength specifications; Group 1 (30% - 810 nm), group 2 (30% - 980 nm), group 3 (46% - 810 nm) and group 4 (46% - 980 nm). All specimens were sent for scanning electron microscopic (SEM) analysis in order to measure tubular diameter in laser treated and control halves. Data were analyzed by ANOVA and Tukey test (p<0.05). Results A significant reduction in dentin tubule diameter was observed in groups 1, 2 and 4. There was no significant difference between groups 1 and 2 and between groups 3 and 4 after bleaching. Conclusions The SEM results showed that diode laser was able to reduce dentin tubule diameter and its effect on dentin was dependent on chemical action of bleaching material. Key words:Laser, diode, dentin, tubule, diameter. PMID:27398172

  12. Dependence of magnetization process on thickness of Permalloy antidot arrays

    SciTech Connect

    Merazzo, K. J.; Real, R. P. del; Asenjo, A.; Vazquez, M.

    2011-04-01

    Nanohole films or antidot arrays of Permalloy have been prepared by the sputtering of Ni{sub 80}Fe{sub 20} onto anodic alumina membrane templates. The film thickness varies from 5 to 47 nm and the antidot diameters go from 42 to 61 nm, for a hexagonal lattice parameter of 105 nm. For the thinner antidot films (5 and 10 nm thick), magnetic moments locally distribute in a complex manner to reduce the magnetostatic energy, and their mostly reversible magnetization process is ascribed to spin rotations. In the case of the thicker (20 and 47 nm) antidot films, pseudodomain walls appear and the magnetization process is mostly irreversible where hysteresis denotes the effect of nanoholes pinning to wall motion.

  13. Process optimization of high aspect ratio sub-32nm HSQ/AR3 bi-layer resist pillar

    NASA Astrophysics Data System (ADS)

    Chen, Wei-Su; Tsai, Ming-Jinn

    2011-04-01

    RRAM is the candidate of next generation new non-volatile memory. The etched stacking film thickness of RRAM cell pillar is not easy to reduce below 50 nm during CD scaling down since part of RRAM cell pillar height is removed during CMP polishing of dielectric passivation to expose the pillar top surface for the following metallization process. Therefore resist pillar pattern with high aspect ratio (AR) is needed to act as etch mask for defining thick RRAM cell pillar structure. Bilayer resist (BLR) process is most suitable for forming high AR pattern. Dry develop process is the key step for generating sub-32 nm high AR BLR pillar pattern. In this study optimization of dry develop process is investigated for high AR pillar with hydrogen silsesquioxane (HSQ) as upper thin imaging layer for e-beam exposure and AR3-600 as the thick underlayer for etching resistant. Experimental results are summarized below. Highest AR of ~6 for HSQ/AR3 BLR semi-dense L/S=1/2 pillar with vertical profile is obtained under optimized dry develop condition with O2, N2, Ar flow rates, chamber pressure, top and bottom power of 8, 5, 0 sccm, 1 mTorr, 200 and 100 watts respectively. AR is lower for looser pattern density. CD variation between HSQ/AR3-600 BLR pillars with different pattern density is optimized to 5.6 nm. The pillar profile is vertical in vacuum for pattern of any density but distorts more severe for denser pattern during ventilation to atmosphere. The most critical process parameters for obtaining high aspect ratio BLR pillar are O2 flow rate and top power. Sidewall profile angle of pillar is mainly dependent on chamber pressure and bottom power.

  14. Thick Film Interference.

    ERIC Educational Resources Information Center

    Trefil, James

    1983-01-01

    Discusses why interference effects cannot be seen with a thick film, starting with a review of the origin of interference patterns in thin films. Considers properties of materials in films, properties of the light source, and the nature of light. (JN)

  15. Growth of gold on a pinwheel TiO(∼1.2) encapsulation film prepared on rhodium nanocrystallites.

    PubMed

    Gubó, R; Óvári, L; Kónya, Z; Berkó, A

    2014-12-01

    Rh nanoparticles of 50-100 nm diameter and 20-40 atomic layer thickness with a (111) flat top facet parallel to the support surface were grown on a TiO2(110) surface via physical vapor deposition (PVD) at room temperature (RT) followed by annealing at 1050 K. These nanoparticles were completely encapsulated by an ordered hexagonal pinwheel TiO∼1.2 ultrathin oxide (w-TiO-UTO) film. STM, XPS, and low energy ion scattering (LEIS) methods were used to characterize the postdeposition of gold and the effects of annealing on the Au/w-TiO-UTO/Rh-particle system. The adlayer exhibits 3D growth and Rh-Au bond formation at 500 K. The 3D Au nanoparticles of 2-3 nm diameter and ∼1 nm height are partially covered by TiOx species at RT and sinter via an Ostwald-ripening in the range of 500-800 K. The adparticles are gradually getting free of TiOx decoration, and at around 900 K they exhibit a double layer height with 2D character. Two different arrangements were found for these Au particles: (i) a compressed Au(111)-(1 × 1) and (ii) a reconstructed Au(111)-(2 × 1), both of them pseudomorphic with the Rh lattice underneath. Above 900 K, the thickness of these 2D particles tends to become a single layer, while they spread out and form a continuous gold layer on the Rh nanoparticles. This behavior indicates a thermally activated replacement of the w-TiO-UTO film by an Au ultrathin layer. The gold layer is stable up to 1000 K, where extended 1D interfaces are formed between gold and w-TiO-UTO layers. PMID:25417893

  16. Photoionization of Nitromethane at 355nm and 266nm

    NASA Astrophysics Data System (ADS)

    Martínez, Denhi; Betancourt, Francisco; Poveda, Juan Carlos; Guerrero, Alfonso; Cisneros, Carmen; Álvarez, Ignacio

    2014-05-01

    Nitromethane is one of the high-yield clean liquid fuels, i.e., thanks to the oxygen contained in nitromethane, much less atmospheric oxygen is burned compared to hydrocarbons such as gasoline, making the nitromethane an important prototypical energetic material, the understanding of its chemistry is relevant in other fields such as atmospheric chemistry or biochemistry. In this work we present the study of photoionization dynamics by multiphoton absorption with 355 nm and 266 nm wavelength photons, using time of flight spectrometry in reflectron mode (R-TOF). Some of the observed ion products appear for both wavelength and other only in one of them; both results were compared with preview observations and new ions were detected. This work is supported by CONACYT grant 165410 and DGAPA-UNAM grants IN-107-912 and IN-102-613.

  17. Sub-50nm extreme ultraviolet holographic imaging

    NASA Astrophysics Data System (ADS)

    Wachulak, P. W.; Marconi, M. C.; Bartels, R. A.; Menoni, C. S.; Rocca, J. J.

    2009-05-01

    Imaging tools for nanoscicence involving sub-100-nm scale objects have been dominated by atomic force microscopy (AFM), scanning tunneling microscopy (STM), and electron microscopy (SEM, TEM). These imaging techniques have contributed substantially to the development of nanoscience, providing a very powerful diagnostic tool capable of obtaining images with atomic resolution or as a subsidiary mechanism to arrange or modify surfaces also at the atomic scale [1,2]. However, some important problems have persisted traditional nanoscale imaging techniques. For example when scanning a nanometer size object that is not attached rigidly to a surface the interaction with the tip significantly perturbs the specimen degrading or eventually precluding the image acquisition. Electron microscopy often requires surface preparation, consisting of metallization of the sample to avoid surface charging. Additionally the metallization of the sample may alter its characteristics and also limits the resolution. In both cases, if the sample is large (millimeters in size) due to the limited field of view, the image obtained with these conventional methods is only representative of a very small portion of the object. Wavelength-limited holographic imaging using carbon nanotubes as the test object with a table-top extreme ultraviolet (EUV) laser operating at 46.9 nm will be discussed. The resolution achieved in this imaging is evaluated with a rigorous correlation image analysis and confirmed with the conventional knife-edge test. The nano-holography presented requires no optics or critical beam alignment; thus the hologram recording scheme is very simple and does not need special sample preparation. In holography, image contrast requires absorption to provide scattering by the illuminating beam. The EUV laser wavelength employed in this experiment (46.9nm) is advantageous because carbon based materials typically exhibit very small attenuation lengths, around 25 nm. The high absorption of

  18. Rifting Thick Lithosphere - Canning Basin, Western Australia

    NASA Astrophysics Data System (ADS)

    Czarnota, Karol; White, Nicky

    2016-04-01

    The subsidence histories and architecture of most, but not all, rift basins are elegantly explained by extension of ~120 km thick lithosphere followed by thermal re-thickening of the lithospheric mantle to its pre-rift thickness. Although this well-established model underpins most basin analysis, it is unclear whether the model explains the subsidence of rift basins developed over substantially thick lithosphere (as imaged by seismic tomography beneath substantial portions of the continents). The Canning Basin of Western Australia is an example where a rift basin putatively overlies lithosphere ≥180 km thick, imaged using shear wave tomography. Subsidence modelling in this study shows that the entire subsidence history of the <300 km wide and <6 km thick western Canning Basin is adequately explained by mild Ordovician extension (β≈1.2) of ~120 km thick lithosphere followed by post-rift thermal subsidence. This is consistent with the established model, described above, albeit with perturbations due to transient dynamic topography support which are expressed as basin-wide unconformities. In contrast the <150 km wide and ~15 km thick Fitzroy Trough of the eastern Canning Basin reveals an almost continuous period of normal faulting between the Ordovician and Carboniferous (β<2.0) followed by negligible post-rift thermal subsidence. These features cannot be readily explained by the established model of rift basin development. We attribute the difference in basin architecture between the western and eastern Canning Basin to rifting of thick lithosphere beneath the eastern part, verified by the presence of ~20 Ma diamond-bearing lamproites intruded into the basin depocentre. In order to account for the observed subsidence, at standard crustal densities, the lithospheric mantle is required to be depleted in density by 50-70 kg m-3, which is in line with estimates derived from modelling rare-earth element concentrations of the ~20 Ma lamproites and global isostatic

  19. Influence of biofilm thickness on nitrous oxide (N2O) emissions from denitrifying fluidized bed bioreactors (DFBBRs).

    PubMed

    Eldyasti, Ahmed; Nakhla, George; Zhu, Jesse

    2014-12-20

    Nitrous oxide (N2O) is a significant anthropogenic greenhouse gas emitted from biological nutrient removal (BNR) processes. This study tries to get a deeper insight into N2O emissions from denitrifying fluidized bed bioreactors (DFBBRs) and its relationship to the biofilm thickness, diffusivity, and reaction rates. The DFBBR was operated at two different organic and nitrogen loading rates of 5.9–7 kg COD/(m3 d) and 1.2–2 kg N/(m3 d), respectively. Results showed that the N2O conversion rate from the DFBBR at a biofilm thickness of 680 μm was 0.53% of the total influent nitrogen loading while at the limited COD and a biofilm thickness of 230 μm, the N2O conversion rate increased by 196–1.57% of the influent nitrogen loading concomitant with a sevenfold increase in liquid nitrite concentration. Comparing the N2O emissions at different biofilm thickness showed that the N2O emission decreased exponentially with biofilm thickness due to the retention of slow growth denitrifiers and the limited diffusivity of N2O. PMID:25450644

  20. OISL transmitter at 985 nm

    NASA Astrophysics Data System (ADS)

    Larose, Robert; Lauzon, Jocelyn; Mohrdiek, Stefan; Harder, Christoph S.; Changkakoti, Rupak; Park, Peter

    1999-04-01

    For high data rate (greater than 1 Gbps) Optical Inter- Satellite Link (OISL), a compact laser transmitter with high power and good efficiency is required. A trade-off analysis between the technologies such as the mature 840 nm laser diodes, 1064 nm diode-pumped solid state laser and the more recent 1550 nm Erbium Doped Fiber Amplifier (EDFA) is used to find the optical solution. The Si-APDs are preferred for their large detector areas and good noise figures which reduce the tracking requirements and simplify optical design of the receiver. Because of significant amount of power needed to close the link distance up to 7000 km (LEO-LEO), use of 840 nm diodes is limited. In this paper, we present an alternative system based on a system concept denoted as the SLYB (Semiconductor Laser Ytterbium Booster). The SLYB uses a polarization maintaining double-clad ytterbium fiber as a power amplifier. The device houses two semiconductor diodes that are designed to meet telecom reliability: a broad-area 917 nm pump diode and a directly modulated FP laser for signal generation. The output signal is in a linearly polarized state with an extinction ratio of 20 dB. The complete module (15 X 12 X 4.3 cm3) weighs less than 0.9 kg and delivers up to 27 dBm average output power at 985 nm. Designed primarily for direct detection using Si APDs, the transmitter offers a modulation data rate of at least 1.5 Gb/s with a modulation extinction ratio better than 13 dB. Total power consumption is expected to be lower than 8 W by using an uncooled pump laser. Preliminary radiation testing of the fiber indicates output power penalty of 1.5 dB at the end of 10 years in operation. We are presently investigating the fabrication of an improved radiation-hardened Yb-fiber for the final prototype to reduce this penalty. For higher data rate the design can be extended to a Wavelength Division Multiplexing (WDM) scheme adding multiple channels.

  1. Precise Fabrication of Nanopores with Diameters of Sub-1 nm to 3 nm Using Multilevel Pulse-voltage Injection

    NASA Astrophysics Data System (ADS)

    Yanagi, Itaru; Akahori, Rena; Yokoi, Takahide; Takeda, Ken-Ichi

    2015-03-01

    To date, solid-state nanopores have been fabricated primarily through a focused-electronic beam via TEM. For mass production, however, a TEM beam is not suitable and an alternative fabrication method is required. Recently, a simple nanopore-fabrication method has been reported that is based on a dielectric breakdown phenomenon of a thin membrane. In this study, to stably fabricate nanopores with diameters of 1 to 2 nm (which is an essential size for distinguishing each nucleotide) via dielectric breakdown, a technique called multilevel pulse-voltage injection (MPVI) is proposed and demonstrated. MPVI uses pulse voltages for generating the nanopores, and the generation of the nanopores is verified by measuring the current through a membrane at low voltage. This method can generate nanopores with diameters of less than 1 nm in a 10-nm-thick Si3N4 membrane with a probability of 90%. The diameter of the generated nanopores can be widened to the desired diameters (up to 3 nm) with sub-nanometre precision. The mean effective thickness of the fabricated nanopores was 3.7 nm. These findings are derived from TEM images of the fabricated nanopores and analyses of ionic-current blockades during single-stranded DNA translocation.

  2. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 43 Public Lands: Interior 2 2014-10-01 2014-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT... Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  3. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 43 Public Lands: Interior 2 2013-10-01 2013-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT... Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  4. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 43 Public Lands: Interior 2 2011-10-01 2011-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT... Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  5. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 43 Public Lands: Interior 2 2012-10-01 2012-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT... Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  6. 16 CFR 1.2 - Procedure.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 16 Commercial Practices 1 2012-01-01 2012-01-01 false Procedure. 1.2 Section 1.2 Commercial Practices FEDERAL TRADE COMMISSION ORGANIZATION, PROCEDURES AND RULES OF PRACTICE GENERAL PROCEDURES Industry Guidance Advisory Opinions § 1.2 Procedure. (a) Application. The request for advice...

  7. 7 CFR 1.2 - Policy.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 1 2011-01-01 2011-01-01 false Policy. 1.2 Section 1.2 Agriculture Office of the Secretary of Agriculture ADMINISTRATIVE REGULATIONS Official Records § 1.2 Policy. (a) Agencies of USDA shall comply with the time limits set forth in the FOIA and in this subpart for responding to...

  8. 7 CFR 1.2 - Policy.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 1 2014-01-01 2014-01-01 false Policy. 1.2 Section 1.2 Agriculture Office of the Secretary of Agriculture ADMINISTRATIVE REGULATIONS Official Records § 1.2 Policy. (a) Agencies of USDA shall comply with the time limits set forth in the FOIA and in this subpart for responding to...

  9. 7 CFR 1.2 - Policy.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 1 2012-01-01 2012-01-01 false Policy. 1.2 Section 1.2 Agriculture Office of the Secretary of Agriculture ADMINISTRATIVE REGULATIONS Official Records § 1.2 Policy. (a) Agencies of USDA shall comply with the time limits set forth in the FOIA and in this subpart for responding to...

  10. 11 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 11 Federal Elections 1 2010-01-01 2010-01-01 false Definitions. 1.2 Section 1.2 Federal Elections FEDERAL ELECTION COMMISSION PRIVACY ACT § 1.2 Definitions. As defined in the Privacy Act of 1974 and for the purposes of this part, unless otherwise required by the context, the following terms shall have these meanings: Act means the...

  11. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2011 CFR

    2008-10-01

    ... 43 Public Lands: Interior 2 2008-10-01 2008-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT.... and Coos Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  12. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2011 CFR

    1996-10-01

    ... 43 Public Lands: Interior 2 1996-10-01 1996-10-01 false Contents. 2812.1-2 Section 2812.1-2 LAND RESOURCE MANAGEMENT (2000) TRAMROADS AND LOGGING ROADS Over O. and C. and Coos Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of any unincorporated association which...

  13. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2010 CFR

    2000-10-01

    ... 43 Public Lands: Interior 2 2000-10-01 2000-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT,DEPARTMENT OF... Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of any...

  14. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2011 CFR

    2002-10-01

    ... 43 Public Lands: Interior 2 2002-10-01 2002-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT... Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  15. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2013 CFR

    2006-10-01

    ... 43 Public Lands: Interior 2 2006-10-01 2006-10-01 false Contents. 2812.1-2 Section 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT... Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  16. 43 CFR 2812.1-2 - Contents.

    Code of Federal Regulations, 2012 CFR

    1997-10-01

    ... 43 Public Lands: Interior 2 1997-10-01 1997-10-01 false Contents. 2812.1-2 Section 2812.1-2 LAND RESOURCE MANAGEMENT (2000) TRAMROADS AND LOGGING ROADS Over O. and C. and Coos Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of any unincorporated association which...

  17. 7 CFR 1.2 - Policy.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 1 2010-01-01 2010-01-01 false Policy. 1.2 Section 1.2 Agriculture Office of the Secretary of Agriculture ADMINISTRATIVE REGULATIONS Official Records § 1.2 Policy. (a) Agencies of USDA shall comply with the time limits set forth in the FOIA and in this subpart for responding to...

  18. 7 CFR 1.2 - Policy.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 1 2013-01-01 2013-01-01 false Policy. 1.2 Section 1.2 Agriculture Office of the Secretary of Agriculture ADMINISTRATIVE REGULATIONS Official Records § 1.2 Policy. (a) Agencies of USDA shall comply with the time limits set forth in the FOIA and in this subpart for responding to...

  19. 16 CFR 1.2 - Procedure.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 16 Commercial Practices 1 2013-01-01 2013-01-01 false Procedure. 1.2 Section 1.2 Commercial Practices FEDERAL TRADE COMMISSION ORGANIZATION, PROCEDURES AND RULES OF PRACTICE GENERAL PROCEDURES Industry Guidance Advisory Opinions § 1.2 Procedure. (a) Application. The request for advice...

  20. 45 CFR 1210.1-2 - Scope.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 45 Public Welfare 4 2013-10-01 2013-10-01 false Scope. 1210.1-2 Section 1210.1-2 Public Welfare Regulations Relating to Public Welfare (Continued) CORPORATION FOR NATIONAL AND COMMUNITY SERVICE VISTA TRAINEE DESELECTION AND VOLUNTEER EARLY TERMINATION PROCEDURES General § 1210.1-2 Scope. (a) This part applies to all Trainees and...

  1. 45 CFR 1211.1-2 - Applicability.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 45 Public Welfare 4 2013-10-01 2013-10-01 false Applicability. 1211.1-2 Section 1211.1-2 Public Welfare Regulations Relating to Public Welfare (Continued) CORPORATION FOR NATIONAL AND COMMUNITY SERVICE VOLUNTEER GRIEVANCE PROCEDURES § 1211.1-2 Applicability. This part applies to all volunteers enrolled under part A of title I of the...

  2. 16 CFR 1.2 - Procedure.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 16 Commercial Practices 1 2011-01-01 2011-01-01 false Procedure. 1.2 Section 1.2 Commercial Practices FEDERAL TRADE COMMISSION ORGANIZATION, PROCEDURES AND RULES OF PRACTICE GENERAL PROCEDURES Industry Guidance Advisory Opinions § 1.2 Procedure. (a) Application. The request for advice...

  3. 16 CFR 1.2 - Procedure.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Procedure. 1.2 Section 1.2 Commercial Practices FEDERAL TRADE COMMISSION ORGANIZATION, PROCEDURES AND RULES OF PRACTICE GENERAL PROCEDURES Industry Guidance Advisory Opinions § 1.2 Procedure. (a) Application. The request for advice...

  4. 16 CFR 1.2 - Procedure.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 16 Commercial Practices 1 2014-01-01 2014-01-01 false Procedure. 1.2 Section 1.2 Commercial Practices FEDERAL TRADE COMMISSION ORGANIZATION, PROCEDURES AND RULES OF PRACTICE GENERAL PROCEDURES Industry Guidance Advisory Opinions § 1.2 Procedure. (a) Application. The request for advice...

  5. Characteristics of blue organic light emitting diodes with different thick emitting layers

    NASA Astrophysics Data System (ADS)

    Li, Chong; Tsuboi, Taiju; Huang, Wei

    2014-08-01

    We fabricated blue organic light emitting diodes (called blue OLEDs) with emitting layer (EML) of diphenylanthracene derivative 9,10-di(2-naphthyl)anthracene (ADN) doped with blue-emitting DSA-ph (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene) to investigate how the thickness of EML and hole injection layer (HIL) influences the electroluminescence characteristics. The driving voltage was observed to increase with increasing EML thickness from 15 nm to 70 nm. The maximum external quantum efficiency of 6.2% and the maximum current efficiency of 14 cd/A were obtained from the OLED with 35 nm thick EML and 75 nm thick HIL. High luminance of 120,000 cd/m2 was obtained at 7.5 V from OLED with 15 nm thick EML.

  6. Thick film ink chemistry

    NASA Astrophysics Data System (ADS)

    Gehman, R. W.

    1982-03-01

    Twenty-six thick film inks from two vendors were proved for hybrid microcircuit production use. A data base of chemical information was established for all the inks to aid in future diagnostic and failure analysis activities. Efforts included both organic chemical analysis of printing vehicles and binders and inorganic chemical analysis of glass frits and electrically active phases. Analytical methods included infrared spectroscopy, mass spectroscopy, gas chromatography, X-ray fluorescence, emission spectroscopy, atomic absorption spectroscopy, and wet chemical techniques.

  7. Absolute Measurements of Radiation Damage in Nanometer Thick Films

    PubMed Central

    Alizadeh, Elahe; Sanche, Léon

    2013-01-01

    We address the problem of absolute measurements of radiation damage in films of nanometer thicknesses. Thin films of DNA (~ 2–160nm) are deposited onto glass substrates and irradiated with varying doses of 1.5 keV X-rays under dry N2 at atmospheric pressure and room temperature. For each different thickness, the damage is assessed by measuring the loss of the supercoiled configuration as a function of incident photon fluence. From the exposure curves, the G-values are deduced, assuming that X-ray photons interacting with DNA, deposit all of their energy in the film. The results show that the G-value (i.e., damage per unit of deposited energy) increases with film thickness and reaches a plateau at 30±5 nm. This thickness dependence provides a correction factor to estimate the actual G-value for films with thicknesses below 30nm thickness. Thus, the absolute values of damage can be compared with that of films of any thickness under different experimental conditions. PMID:22562941

  8. Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

    NASA Technical Reports Server (NTRS)

    Asenov, Asen; Saini, Subhash

    2000-01-01

    In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

  9. UV-B optical thickness observations of the atmosphere

    NASA Astrophysics Data System (ADS)

    Kirchhoff, V. W. J. H.; Silva, A. A.; Costa, C. A.; Leme, N. Paes; PavãO, H. G.; Zaratti, F.

    2001-02-01

    The optical thickness of the atmosphere, τ, was deduced from measurements of narrowband direct solar UV-B radiation. A measurement campaign was organized to obtain the radiation at three different sites, during the month of August 1999, using the same methods and instruments, in order to deduce the atmospheric optical thickness in the spectral UV-B range (280-320 nm). The three observation sites were chosen to cover a wide range of measurement conditions; located near the tropical Atlantic Ocean (Natal, 5.8°S, 35.2°W), on the Andes mountains (La Paz, 16.5°S, 68.1°W), and in the biomass burning area of central Brazil (Campo Grande, 19.2°S, 54.3°W). The UV-B measurements were made with a Brewer spectrophotometer at each site. Since the instrument measures atmospheric ozone and SO2 simultaneously, it is possible, from the total atmospheric optical thickness τ, to deduce the aerosol optical thickness τaerosol. The results have been combined in different ways to compare with satellite data, showing good performance. Time variations as short as about 10 min can be seen. On clear days the time variations are relatively small, as expected. On the other hand, for the biomass burning site, for conditions of mixed air masses (the instrument is not looking directly at plumes) one can see very large variations in τ in relatively short time intervals, for example, for one case, from 3.5 to 7.0 in about 30 min. Absolute values for τ at Natal and La Paz were near 2.0 and at Campo Grande, between 2.5 and 3.0, but with occasional highs of about 4.5. For τaerosol, Natal and La Paz had values between 0.0 and 0.4, whereas Campo Grande had most values near 0.4, with occasional highs near 1.0, 1.2, and 2.2.

  10. Non-contact optical measurement of lens capsule thickness during simulated accommodation

    NASA Astrophysics Data System (ADS)

    Ziebarth, Noel; Manns, Fabrice; Acosta, Ana-Carolina; Parel, Jean-Marie

    2005-04-01

    Purpose: To non-invasively measure the thickness of the anterior and posterior lens capsule, and to determine if it significantly changes during accommodation. Methods: Anterior and posterior capsule thickness was measured on post-mortem lenses using a non-contact optical system using a focus-detection technique. The optical system uses a 670nm laser beam delivered to a single-mode fiber coupler. The output of the fiber coupler is focused on the tissue surface using an aspheric lens (NA=0.68) mounted on a translation stage with a motorized actuator. Light reflected from the sample surface is collected by the fiber coupler and sent to a photoreceiver connected to a computer-controlled data acquisition system. Optical intensity peaks are detected when the aspheric lens is focused on the capsule boundaries. The capsule thickness is equal to the distance traveled between two peaks multiplied by the capsule refractive index. Anterior and posterior lens capsule thickness measurements were performed on 18 cynomolgus (age average: 6+/-1 years, range: 4-7 years) eyes, 1 rhesus (age: 2 years) eye, and 12 human (age average: 65+/-16, range: 47-92) eyes during simulated accommodation. The mounted sample was placed under the focusing objective of the optical system so that the light was incident on the center pole. Measurements were taken of the anterior lens capsule in the unstretched and the stretched 5mm states. The lens was flipped, and the same procedure was performed for the posterior lens capsule. Results: The precision of the optical system was determined to be +/-0.5um. The resolution is 4um and the sensitivity is 52dB. The human anterior lens capsule thickness was 6.0+/-1.2um unstretched and 4.9+/-0.9um stretched (p=0.008). The human posterior lens capsule was 5.7+/-1.2um unstretched and 5.7+/-1.4um stretched (p=0.974). The monkey anterior lens capsule thickness was 5.9+/-1.9um unstretched and 4.8+/-1.0um stretched (p=0.002). The monkey posterior lens capsule was 5

  11. Fabrication of a thin silicon detector with excellent thickness uniformity

    NASA Astrophysics Data System (ADS)

    Valtonen, E.; Eronen, T.; Nenonen, S.; Andersson, H.; Miikkulainen, K.; Eränen, S.; Ronkainen, H.; Mäkinen, J.; Husu, H.; Lassila, A.; Punkkinen, R.; Hirvonen, M.

    2016-02-01

    We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 μm with an rms thickness uniformity of±0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I- V and C- V curves and the performance was verified using a 241Am alpha source.

  12. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers.

    PubMed

    Bersweiler, M; Dumesnil, K; Lacour, D; Hehn, M

    2016-08-24

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm-2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces. PMID:27351776

  13. Comparison of 885 nm pumping and 808 nm pumping in Nd:CNGG laser operating at 1061 nm and 935 nm

    NASA Astrophysics Data System (ADS)

    Shi, Yuxian; Li, Qinan; Zhang, Dongxiang; Feng, Baohua; Zhang, Zhiguo; Zhang, Huaijin; Wang, Jiyang

    2010-07-01

    A Nd:CNGG laser operated at 935 nm and 1061 nm pumped at 885 nm and 808 nm, respectively, is demonstrated. The 885 nm direct pumping scheme shows some advantages over the 808 nm traditional pumping scheme. It includes higher slope efficiency, lower threshold, and better beam quality at high output power. With the direct pumping, the slope efficiency increases by 43% and the threshold decreases by 10% compared with traditional pumping in the Nd:CNGG laser operated at 935 nm. When the Nd:CNGG laser operates at 1061 nm, the direct pumping increases the slope efficiency by 14% with a 20% reduction in the oscillation threshold.

  14. Segmentation of the macular choroid in OCT images acquired at 830nm and 1060nm

    NASA Astrophysics Data System (ADS)

    Lee, Sieun; Beg, Mirza F.; Sarunic, Marinko V.

    2013-06-01

    Retinal imaging with optical coherence tomography (OCT) has rapidly advanced in ophthalmic applications with the broad availability of Fourier domain (FD) technology in commercial systems. The high sensitivity afforded by FD-OCT has enabled imaging of the choroid, a layer of blood vessels serving the outer retina. Improved visualization of the choroid and the choroid-sclera boundary has been investigated using techniques such as enhanced depth imaging (EDI), and also with OCT systems operating in the 1060-nm wavelength range. We report on a comparison of imaging the macular choroid with commercial and prototype OCT systems, and present automated 3D segmentation of the choroid-scleral layer using a graph cut algorithm. The thickness of the choroid is an important measurement to investigate for possible correlation with severity, or possibly early diagnosis, of diseases such as age-related macular degeneration.

  15. Fetal nuchal translucency thickness.

    PubMed

    Witters, I; Fryns, J R

    2007-01-01

    In the early 1990s Nicolaides introduced screening for trisomy 21 by fetal nuchal translucency thickness measurement with ultrasound between 11-13(+6) weeks. Already in 1866 L. Down noted that common features of patients with trisomy 21 are a skin being too large for the body and a flat face with a small nose. While detection rates for trisomy 21, given an invasive testing rate of 5%, were only 30% for screening by maternal age and 65% for screening by maternal serum triple test, the detection rate for screening by nuchal translucency combined with maternal age was 75% and this could be increased to 90% in combination with maternal serum screening (serum B-human chorionic gonadotropin and pregnancy-associated plasma protein-A) at 11-13(+6) weeks. The additional soft markers in the first trimester are the fetal nasal bone, the Doppler velocity waveform in the ductus venosus and tricuspid regurgitation and these markers can be used to further increase the detection rate of trisomy 21. In addition increased nuchal translucency thickness can also identify other chromosomal defects (mainly trisomy 13 and 18 and monosomy X) and major congenital malformations (mainly cardiac defects) and genetic syndromes. PMID:17515296

  16. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

    2015-04-01

    InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z~0.38) IL is ~1-2 nm thick, and is grown after and at the same growth temperature as the ~3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a ~10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to~0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

  17. X-1-2 on ramp

    NASA Technical Reports Server (NTRS)

    1951-01-01

    The Bell Aircraft Corporation X-1-2 aircraft on the ramp at NACA High Speed Flight Research Station located on the South Base of Muroc Army Air Field in 1947. The X-1-2 flew until October 23, 1951, completing 74 glide and powered flights with nine different pilots. The aircraft has white paint and the NACA tail band. The black Xs are reference markings for tracking purposes. They were widely used on NACA aircraft in the early 1950s. There were five versions of the Bell X-1 rocket-powered research aircraft that flew at the NACA High-Speed Flight Research Station, Edwards, California. The bullet-shaped X-1 aircraft were built by Bell Aircraft Corporation, Buffalo, N.Y. for the U.S. Army Air Forces (after 1947, U.S. Air Force) and the National Advisory Committee for Aeronautics (NACA). The X-1 Program was originally designated the XS-1 for EXperimental Sonic. The X-1's mission was to investigate the transonic speed range (speeds from just below to just above the speed of sound) and, if possible, to break the 'sound barrier.' Three different X-1s were built and designated: X-1-1, X-1-2 (later modified to become the X-1E), and X-1-3. The basic X-1 aircraft were flown by a large number of different pilots from 1946 to 1951. The X-1 Program not only proved that humans could go beyond the speed of sound, it reinforced the understanding that technological barriers could be overcome. The X-1s pioneered many structural and aerodynamic advances including extremely thin, yet extremely strong wing sections; supersonic fuselage configurations; control system requirements; powerplant compatibility; and cockpit environments. The X-1 aircraft were the first transonic-capable aircraft to use an all-moving stabilizer. The flights of the X-1s opened up a new era in aviation. The first X-1 was air-launched unpowered from a Boeing B-29 Superfortress on Jan. 25, 1946. Powered flights began in December 1946. On Oct. 14, 1947, the X-1-1, piloted by Air Force Captain Charles 'Chuck' Yeager

  18. Photoabsorption cross sections of OH at 115-183 nm

    NASA Technical Reports Server (NTRS)

    Nee, J. B.; Lee, L. C.

    1984-01-01

    The absorption spectrum for OH was obtained in the 115-183 nm region. The OH radicals were produced by a pulse discharge of trace H2O in few torr of Ar. Absorption cross sections were obtained by calibration with absorption of the OH (X 2 Pi to A 2 Sigma +) transition. The features in the absorption spectrum are correlated with the excited states 1 2 Sigma -, D 2 Sigma -, 1 2 Delta, B 2 Sigma + and possibly others calculated by van Dishoeck, Langhoff, and Dalgarno. The measured cross sections are comparable with the calculated values.

  19. NM goes to China:4.

    PubMed

    Young, P

    1977-12-22

    Participants in a Nursing Mirror sponsored tour of China spent a day at the Tsinan Hospital and Medical College. They were permitted to watch 3 operations performed under traditional anesthesia. A thyroidictomy and removal of an ovarian cyst were performed under herbal anesthesia, and an operation for cancer of the esophagus was performed with acupuncture anesthesia. The patients were conscious throughout the procedures and appeared to be confortable. The herbal anesthesia was made by combining a substance derived from thorn apple flowers with a muscle relaxant. These traditional methods of anesthesia permitted the patients to cooperate with the surgeon during the operation. The patients suffered no after effects from the anesthesia, and the group was told that recovery time was shorter than when Western forms of anesthesia were used. The tour group also visited the nurses' training school and were informed that 1) there were 200 students currently enrolled in the school and 2) nursing training consisted of 1 1/2 years of academic work followed by 1/2 year of on the job training. The group discussed family planning services with hospital personnel and learned 1) IUD insertions were performed by trained midwives; 2) midwives conducted childbirth classes for pregnant women; 3) labor was induced primarily with herbal medicines; and 4) women were prepared to cope with labor pain through ideological education although acupuncture and pethidine were sometimes used to reduce pain. PMID:243856

  20. 44 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ..., appliances, services, or allowances therefor or to valuations, costs or accounting, or practices relating to... 44 Emergency Management and Assistance 1 2011-10-01 2011-10-01 false Definitions. 1.2 Section 1.2 Emergency Management and Assistance FEDERAL EMERGENCY MANAGEMENT AGENCY, DEPARTMENT OF HOMELAND...

  1. 24 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... participates in carrying out such program or activity (such as a redeveloper in the Urban Renewal Program... 24 Housing and Urban Development 1 2010-04-01 2010-04-01 false Definitions. 1.2 Section 1.2 Housing and Urban Development Office of the Secretary, Department of Housing and Urban...

  2. 24 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... participates in carrying out such program or activity (such as a redeveloper in the Urban Renewal Program... 24 Housing and Urban Development 1 2013-04-01 2013-04-01 false Definitions. 1.2 Section 1.2 Housing and Urban Development Office of the Secretary, Department of Housing and Urban...

  3. 24 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... participates in carrying out such program or activity (such as a redeveloper in the Urban Renewal Program... 24 Housing and Urban Development 1 2014-04-01 2014-04-01 false Definitions. 1.2 Section 1.2 Housing and Urban Development Office of the Secretary, Department of Housing and Urban...

  4. 24 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... participates in carrying out such program or activity (such as a redeveloper in the Urban Renewal Program... 24 Housing and Urban Development 1 2012-04-01 2012-04-01 false Definitions. 1.2 Section 1.2 Housing and Urban Development Office of the Secretary, Department of Housing and Urban...

  5. 24 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... participates in carrying out such program or activity (such as a redeveloper in the Urban Renewal Program... 24 Housing and Urban Development 1 2011-04-01 2011-04-01 false Definitions. 1.2 Section 1.2 Housing and Urban Development Office of the Secretary, Department of Housing and Urban...

  6. 44 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 44 Emergency Management and Assistance 1 2014-10-01 2014-10-01 false Definitions. 1.2 Section 1.2 Emergency Management and Assistance FEDERAL EMERGENCY MANAGEMENT AGENCY, DEPARTMENT OF HOMELAND SECURITY... Emergency Management Agency. (e) Major rule means any regulation that is likely to result in: (1) An...

  7. 44 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 44 Emergency Management and Assistance 1 2012-10-01 2011-10-01 true Definitions. 1.2 Section 1.2 Emergency Management and Assistance FEDERAL EMERGENCY MANAGEMENT AGENCY, DEPARTMENT OF HOMELAND SECURITY... Emergency Management Agency. (e) Major rule means any regulation that is likely to result in: (1) An...

  8. 44 CFR 1.2 - Definitions.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 44 Emergency Management and Assistance 1 2013-10-01 2013-10-01 false Definitions. 1.2 Section 1.2 Emergency Management and Assistance FEDERAL EMERGENCY MANAGEMENT AGENCY, DEPARTMENT OF HOMELAND SECURITY... Emergency Management Agency. (e) Major rule means any regulation that is likely to result in: (1) An...

  9. Ultrasonic Inspection Of Thick Sections

    NASA Technical Reports Server (NTRS)

    Friant, C. L.; Djordjevic, B. B.; O'Keefe, C. V.; Ferrell, W.; Klutz, T.

    1993-01-01

    Ultrasonics used to inspect large, relatively thick vessels for hidden defects. Report based on experiments in through-the-thickness transmission of ultrasonic waves in both steel and filament-wound composite cases of solid-fuel rocket motors.

  10. Ferroelectric (Na1/2Bi1/2)TiO3 thin films showing photoluminescence properties

    NASA Astrophysics Data System (ADS)

    Zannen, M.; Dietze, M.; Khemakhem, H.; Es-Souni, M.

    2014-06-01

    Polycrystalline lead-free (Na1/2Bi1/2)TiO3 (NBT) ferroelectric thin films doped with 1 mol% of rare earth (RE) elements are processed on Pt-terminated silicon substrates using a solution deposition method. The thin films that exhibit single-phase perovskite structure show photoluminescence properties with highest intensities in the wavelength range between 700 and 850 nm, depending on RE element. The ferroelectric properties of the pure NBT film (P r: 20.5 µC cm-2, E c: 150 kV cm-1) are somewhat decreased for the doped films, which is ascribed to decreasing of the number of Bi lone pairs through the substitution of Bi with RE elements in the perovskite lattice.

  11. High-index nanocomposite photoresist for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Bae, Woo Jin; Trikeriotis, Makros; Rodriguez, Robert; Zettel, Michael F.; Piscani, Emil; Ober, Christopher K.; Giannelis, Emmanuel P.; Zimmerman, Paul

    2009-03-01

    In immersion lithography, high index fluids are used to increase the numerical aperture (NA) of the imaging system and decrease the minimum printable feature size. Water has been used in first generation immersion lithography at 193 nm to reach the 45 nm node, but to reach the 38 and 32 nm nodes, fluids and resists with a higher index than water are needed. A critical issue hindering the implementation of 193i at the 32 nm node is the availability of high refractive index (n > 1.8) and low optical absorption fluids and resists. It is critical to note that high index resists are necessary only when a high refractive index fluid is in use. High index resist improves the depth of focus (DOF) even without high index fluids. In this study, high refractive index nanoparticles have been synthesized and introduced into a resist matrix to increase the overall refractive index. The strategy followed is to synthesize PGMEA-soluble nanoparticles and then disperse them into a 193 nm resist. High index nanoparticles 1-2 nm in diameter were synthesized by a combination of hydrolysis and sol-gel methods. A ligand exchange method was used, allowing the surface of the nanoparticles to be modified with photoresist-friendly moieties to help them disperse uniformly in the resist matrix. The refractive index and ultraviolet absorbance were measured to evaluate the quality of next generation immersion lithography resist materials.

  12. Simultaneous orientation and thickness mapping in transmission electron microscopy

    SciTech Connect

    Tyutyunnikov, Dmitry; Özdöl, V. Burak; Koch, Christoph T.

    2014-12-04

    In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 nm technology transistor structures. The performance and limitations of our method are discussed and compared to those of other techniques available.

  13. Thickness Dependence of Properties of ITO Films Deposited on PET Substrates.

    PubMed

    Kim, Seon Tae; Kim, Tae Gyu; Cho, Hyun; Yoon, Su Jong; Kim, Hye Sung; Kim, Jin Kon

    2016-02-01

    Indium tin oxide (ITO) films with various thicknesses from 104 nm to 513 nm were prepared onto polyethylene terephthalate (PET) substrates by using r.f. magnetron sputtering without intentionally heating the substrates. The structural, optical, and electrical properties of ITO films were investigated as a function of film thickness. It was found that the amorphous nature of the ITO film was dominant below the thickness of about 200 nm but the degree of the crystallinity increased with an increasing thickness above the thickness of about 250 nm, resulting in the increase of carrier concentration and therefore reducing the electrical resistivity from 5.1 x 10(-3) to 9.4 x 10(-4) omega x cm. The average transmittance (400-800 nm) of the ITO deposited PET substrates decreased as the film thickness was increasing and was above 80% for the thickness below 315 nm. The results show that the improvement of the film crystallinity with the film thickness contributes to the increase of the carrier concentration and the enhancement of the electrical conductivity. PMID:27433686

  14. Efficient 1061 and 1329 nm laser emission of Nd:CNGG lasers under 885 nm diode pumping into the emitting level

    NASA Astrophysics Data System (ADS)

    Li, Y. L.; Jiang, H. L.; Ni, T. Y.; Zhang, T. Y.; Tao, Z. H.; Zeng, Y. H.

    2011-03-01

    We report an efficiency Nd:CNGG laser operating at 1061 and 1329 nm, respectively, direct pumped by a diode laser at 885 nm for the first time to our knowledge. The maximum outputs of 4.5 and 2.9 W, at 1061 and 1329 nm, respectively, are obtained in a 6-mm-thick 0.5 at % Nd:CNGG crystal with 13.5 W of absorbed pump power at 885 nm, leading to a high slope efficiency with respect to the absorbed pump power of 32.2 and 22.1%. Under traditional pumping at 808 nm, the maximum outputs of 3.9 and 2.7 W, at 1061 and 1329 nm, respectively, are obtained with 15.4 W of absorbed pump power, corresponding to the slope efficiency with respect to the absorbed pump power of 25.2 and 17.9%.

  15. TiO2@Carbon Photocatalysts: The Effect of Carbon Thickness on Catalysis.

    PubMed

    Zhang, Jianming; Vasei, Mitra; Sang, Yuanhua; Liu, Hong; Claverie, Jerome P

    2016-01-27

    Nanocomposites composed of TiO2 and carbon materials (C) are widely popular photocatalysts because they combine the advantages of TiO2 (good UV photocatalytic activity, low cost, and stability) to the enhanced charge carrier separation and lower charge transfer resistance brought by carbon. However, the presence of carbon can also be detrimental to the photocatalytic performance as it can block the passage of light and prevent the reactant from accessing the TiO2 surface. Here using a novel interfacial in situ polymer encapsulation-graphitization method, where a glucose-containing polymer was grown directly on the surface of the TiO2, we have prepared uniform TiO2@C core-shell structures. The thickness of the carbon shell can be precisely and easily tuned between 0.5 and 8 nm by simply programming the polymer growth on TiO2. The resulting core@shell TiO2@C nanostructures are not black and they possess the highest activity for the photodegradation of organic compounds when the carbon shell thickness is 1-2 nm, corresponding to ∼3-5 graphene layers. Photoluminescence and photocurrent generation tests further confirm the crucial contribution of the carbon shell on charge carrier separation and transport. This in situ polymeric encapsulation approach allows for the careful tuning of the thickness of graphite-like carbon, and it potentially constitutes a general and efficient route to prepare other oxide@C catalysts, which can therefore largely expand the applications of nanomaterials in catalysis. PMID:26716463

  16. Beam profile measurements for dental phototherapy: the effect of distance, wavelength and tissue thickness

    NASA Astrophysics Data System (ADS)

    Palin, William M.; Hadis, Mohammed A.; Milward, Michael R.; Carroll, James D.; Cooper, Paul R.

    2015-03-01

    Light delivery for potential bacterial disinfection (UV/blue) and photobiomodulation (near-IR) requires specific, concentrated and controllable local irradiance and dose. Dental targets for light irradiation involve dentine, which scatters, absorbs and reflects light, reducing local irradiance. This study compared the effectiveness of LEDs (400-900nm) and lasers (660nm and 810nm) to penetrate dentine. Caries-free wisdom teeth were sectioned through the Pulpchamber by either cutting perpendicular to the crown, the buccal aspect or obliquely. Specimens were wet-polished to 1, 2 or 3mm thicknesses to expose the dentine on opposing surfaces. The beam profile of the LEDs/lasers were measured through dentine specimens (n=5) to obtain beam width following optical calibration, and spatial irradiance distribution following photodiode power calibration. There were no significant differences in the percentage power and irradiance transmitted through different dentine specimens between LEDs and lasers (P>0.05). However, light penetration through tissue was wavelength dependent and highest for red and near-IR wavelengths (P<0.05) for specimens cut perpendicular to the crown compared with buccal and oblique specimens. The beam diameters increased and irradiance decreased significantly (P<0.05) with increasing specimen thickness/distance for both LEDs and lasers. There was a noticeable shift in beam position for all light sources in buccal and oblique specimens. Data indicated that dentine tubule orientation may alter the direction of light through the tissue. Optimal light penetration and distribution through dentine at specific distance is best achieved with a flat-top beam distribution vertically through the crown of the tooth.

  17. Reproducibility of airway wall thickness measurements

    NASA Astrophysics Data System (ADS)

    Schmidt, Michael; Kuhnigk, Jan-Martin; Krass, Stefan; Owsijewitsch, Michael; de Hoop, Bartjan; Peitgen, Heinz-Otto

    2010-03-01

    Airway remodeling and accompanying changes in wall thickness are known to be a major symptom of chronic obstructive pulmonary disease (COPD), associated with reduced lung function in diseased individuals. Further investigation of this disease as well as monitoring of disease progression and treatment effect demand for accurate and reproducible assessment of airway wall thickness in CT datasets. With wall thicknesses in the sub-millimeter range, this task remains challenging even with today's high resolution CT datasets. To provide accurate measurements, taking partial volume effects into account is mandatory. The Full-Width-at-Half-Maximum (FWHM) method has been shown to be inappropriate for small airways1,2 and several improved algorithms for objective quantification of airway wall thickness have been proposed.1-8 In this paper, we describe an algorithm based on a closed form solution proposed by Weinheimer et al.7 We locally estimate the lung density parameter required for the closed form solution to account for possible variations of parenchyma density between different lung regions, inspiration states and contrast agent concentrations. The general accuracy of the algorithm is evaluated using basic tubular software and hardware phantoms. Furthermore, we present results on the reproducibility of the algorithm with respect to clinical CT scans, varying reconstruction kernels, and repeated acquisitions, which is crucial for longitudinal observations.

  18. Structure and corrosion behavior of sputter deposited cerium oxide based coatings with various thickness on Al 2024-T3 alloy substrates

    NASA Astrophysics Data System (ADS)

    Liu, Yuanyuan; Huang, Jiamu; Claypool, James B.; Castano, Carlos E.; O'Keefe, Matthew J.

    2015-11-01

    Cerium oxide based coatings from ∼100 to ∼1400 nm in thickness were deposited onto Al 2024-T3 alloy substrates by magnetron sputtering of a 99.99% pure CeO2 target. The crystallite size of CeO2 coatings increased from 15 nm to 46 nm as the coating thickness increased from ∼100 nm to ∼1400 nm. The inhomogeneous lattice strain increased from 0.36% to 0.91% for the ∼100 nm to ∼900 nm thick coatings and slightly decreased to 0.89% for the ∼1400 nm thick coating. The highest adhesion strength to Al alloy substrates was for the ∼210 nm thick coating, due to a continuous film coverage and low internal stress. Electrochemical measurements indicated that sputter deposited crystalline CeO2 coatings acted as physical barriers that provide good cathodic inhibition for Al alloys in saline solution. The ∼900 nm thick CeO2 coated sample had the best corrosion performance that increased the corrosion resistance by two orders magnitude and lowered the cathodic current density 30 times compared to bare Al 2024-T3 substrates. The reduced defects and exposed surface, along with suppressed charge mobility, likely accounts for the improved corrosion performance as coating thickness increased from ∼100 nm to ∼900 nm. The corrosion performance decreased for ∼1400 nm thick coatings due in part to an increase in coating defects and porosity along with a decrease in adhesion strength.

  19. Effect of Ru thickness on spin pumping in Ru/Py bilayer

    SciTech Connect

    Behera, Nilamani; Singh, M. Sanjoy; Chaudhary, Sujeet; Pandya, Dinesh K. Muduli, P. K.

    2015-05-07

    We report the effect of Ru thickness (t{sub Ru}) on ferromagnetic resonance (FMR) line-width of Ru(t{sub Ru})/Py(23 nm) bilayer samples grown on Si(100)/SiO{sub 2} substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15 nm, Gilbert-damping parameter, α is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, λ{sub sd}. For thicknesses >15 nm (>λ{sub sd}), the damping constant increases with Ru thickness, indicating spin pumping from Py into Ru.

  20. Waterway Ice Thickness Measurements

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The ship on the opposite page is a U. S. Steel Corporation tanker cruising through the ice-covered waters of the Great Lakes in the dead of winter. The ship's crew is able to navigate safely by plotting courses through open water or thin ice, a technique made possible by a multi-agency technology demonstration program in which NASA is a leading participant. Traditionally, the Great Lakes-St. Lawrence Seaway System is closed to shipping for more than three months of winter season because of ice blockage, particularly fluctuations in the thickness and location of ice cover due to storms, wind, currents and variable temperatures. Shippers have long sought a system of navigation that would allow year-round operation on the Lakes and produce enormous economic and fuel conservation benefits. Interrupted operations require that industrial firms stockpile materials to carry them through the impassable months, which is costly. Alternatively, they must haul cargos by more expensive overland transportation. Studies estimate the economic benefits of year-round Great Lakes shipping in the hundreds of millions of dollars annually and fuel consumption savings in the tens of millions of gallons. Under Project Icewarn, NASA, the U.S. Coast Guard and the National Oceanic Atmospheric Administration collaborated in development and demonstration of a system that permits safe year-round operations. It employs airborne radars, satellite communications relay and facsimile transmission to provide shippers and ships' masters up-to-date ice charts. Lewis Research Center contributed an accurate methods of measuring ice thickness by means of a special "short-pulse" type of radar. In a three-year demonstration program, Coast Guard aircraft equipped with Side-Looking Airborne Radar (SLAR) flew over the Great Lakes three or four times a week. The SLAR, which can penetrate clouds, provided large area readings of the type and distribution of ice cover. The information was supplemented by short

  1. Effects of p-type GaN thickness on optical properties of GaN-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Xu, Ming-sheng; Zhang, Heng; Zhou, Quan-bin; Wang, Hong

    2016-07-01

    The influence of p-type GaN (pGaN) thickness on the light output power ( LOP) and internal quantum efficiency ( IQE) of light emitting diode (LED) was studied by experiments and simulations. The LOP of GaN-based LED increases as the thickness of pGaN layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pGaN increases by 30.9% compared with that of the conventional LED with 300-nm-thick pGaN. The variation trend of IQE is similar to that of LOP as the decrease of GaN thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick pGaN is ascribed to the improvements of the carrier concentrations and recombination rates.

  2. AC conductivity and relaxation mechanism in (Nd1/2Li1/2)(Fe1/2V1/2)O3 ceramics

    NASA Astrophysics Data System (ADS)

    Nath, Susmita; Barik, Subrat Kumar; Choudhary, R. N. P.

    2016-05-01

    In the present study we have synthesized polycrystalline sample of (Nd1/2Li1/2)(Fe1/2V1/2)O3 ceramic by a standard high-temperature solid-state reaction technique. Studies of dielectric and electrical properties of the compound have been carried out in a wide range of temperature (RT - 400 °C) and frequency (1kHz - 1MHz) using complex impedance spectroscopic technique. The imaginary vs. real component of the complex impedance plot (Nyquist plot) of the prepared sample exhibits the existence of grain, grain boundary contributions in the complex electrical parameters and negative temperature coefficient of resistance (NTCR) type behavior like semiconductor. Details study of ac conductivity plot reveals that the material obeys universal Jonscher's power law.

  3. Nanometer-thick flat lens with adjustable focus

    SciTech Connect

    Son, T. V.; Haché, A.; Ba, C. O. F.; Vallée, R.

    2014-12-08

    We report laser beam focusing by a flat, homogeneous film with a thickness of less than 100 nm. The effect relies on refractive index changes occurring in vanadium dioxide as it undergoes a phase transition from insulator to metal. Phase front curvature is achieved by means of temperature gradients, and adjustable focal lengths from infinity to 30 cm are attained.

  4. Sub-180 nm generation with borate crystal

    NASA Astrophysics Data System (ADS)

    Qu, Chen; Yoshimura, Masashi; Tsunoda, Jun; Kaneda, Yushi; Imade, Mamoru; Sasaki, Takatomo; Mori, Yusuke

    2014-10-01

    We demonstrated a new scheme for the generation of 179 nm vacuum-ultraviolet (VUV) light with an all-solid-state laser system. It was achieved by mixing the deep-ultraviolet (DUV) of 198.8 nm and the infrared (IR) of 1799.9 nm. While CsB3O5 (CBO) did not satisfy the phase-matching at around 180 nm, 179 nm output was generated with LiB3O5 (LBO) for the first time. The phase-matching property of LBO at around 180 nm was also investigated. There was small deviation from theoretical curve in the measurement, which is still considered reasonable.

  5. Cisplatin inhibits MEK1/2

    PubMed Central

    Yamamoto, Tetsu; Tsigelny, Igor F.; Götz, Andreas W.; Howell, Stephen B.

    2015-01-01

    Cisplatin (cDDP) is known to bind to the CXXC motif of proteins containing a ferrodoxin-like fold but little is known about its ability to interact with other Cu-binding proteins. MEK1/2 has recently been identified as a Cu-dependent enzyme that does not contain a CXXC motif. We found that cDDP bound to and inhibited the activity of recombinant MEK1 with an IC50 of 0.28 μM and MEK1/2 in whole cells with an IC50 of 37.4 μM. The inhibition of MEK1/2 was relieved by both Cu+1 and Cu+2 in a concentration-dependent manner. cDDP did not inhibit the upstream pathways responsible for activating MEK1/2, and did not cause an acute depletion of cellular Cu that could account for the reduction in MEK1/2 activity. cDDP was found to bind MEK1/2 in whole cells and the extent of binding was augmented by supplementary Cu and reduced by Cu chelation. Molecular modeling predicts 3 Cu and cDDP binding sites and quantum chemistry calculations indicate that cDDP would be expected to displace Cu from each of these sites. We conclude that, at clinically relevant concentrations, cDDP binds to and inhibits MEK1/2 and that both the binding and inhibitory activity are related to its interaction with Cu bound to MEK1/2. This may provide the basis for useful interactions of cDDP with other drugs that inhibit MAPK pathway signaling. PMID:26155939

  6. Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

    SciTech Connect

    Momblona, C.; Malinkiewicz, O.; Soriano, A.; Gil-Escrig, L.; Bandiello, E.; Scheepers, M.; Bolink, H. J.; Edri, E.

    2014-08-01

    Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging from 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.

  7. Thickness Dependence Magnetization in Laser Ablated Ni-Cu-Zn Ferrite Nanostructured Thin Films.

    PubMed

    Raghavender, A T; Hong, Nguyen Hoa; Lee, Kyu Joon; Jung, Myung-Hwa

    2016-01-01

    Ni₀.₅Cu₀.₃Zn₀.₂Fe₂O₄ thin films with thickness ranging from 25 nm to 500 nm were grown on Si substrate using pulsed laser deposition technique and their structural and magnetic properties were investigated. From the atomic force microscopy (AFM) analysis, it is observed that the film roughness (Ra) depends strongly on the thickness of the fabricated film. The magnetizations of the thin films were found to decrease when the film thickness increases. The thinner films showed a larger magnetization than the thick films. All the films showed a blocking temperature indicating their superparamagnetic behavior. PMID:27398528

  8. Development of the nitride film thickness standard (NFTS)

    NASA Astrophysics Data System (ADS)

    Durga Pal, Prabha

    1998-07-01

    The semiconductor industry has been demanding film thickness reference material for films other than thermally grown silicon dioxide for sometime. To meet this challenge, Nitride Film Thickness Standard (NFTS) has been developed in four nominal thickness values, 20.0 nm, 90.0 nm, 120.0 nm and 200.0 nm. These are silicon nitride (Si3N4) films on silicon crystal substrate. Work is underway to develop a 9.0 nm standard. Thin nitride films are particularly needed for calibration of the thickness of nitride layers in capacitors and isolation masks for LOCOS (local oxidation of silicon). The reference material is certified for derived film thickness. The study consists of measurements made on four different sets of wafers that included patterned and unpatterned wafers. The measurements made on these wafer sets were used for answering issues related to film stability and cleaning. The stability study includes the search for a cleaning process that will restore a prior surface condition. On two sets of wafers two different types of cleaning procedures were used. Results indicate that a sulfuric acidmegasonic clean will etch the nitride film while an isopropyl alcohol clean followed by a deionized water rinse can be used over and over again. The third set of wafers was never cleaned and measurements were made on these over a period of two years. The last set of wafers is patterned. These are cleaned prior to measurement. Results show that LPCVD silicon nitride films are stable and can be used with confidence over a long period of time for calibrating optical metrology instruments.

  9. Thickness dependent wetting properties and surface free energy of HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Zenkin, Sergei; Belosludtsev, Alexandr; Kos, Šimon; Čerstvý, Radomír; Haviar, Stanislav; Netrvalová, Marie

    2016-06-01

    We show here that intrinsic hydrophobicity of HfO2 thin films can be easily tuned by the variation of film thickness. We used the reactive high-power impulse magnetron sputtering for preparation of high-quality HfO2 films with smooth topography and well-controlled thickness. Results show a strong dependence of wetting properties on the thickness of the film in the range of 50-250 nm due to the dominance of the electrostatic Lifshitz-van der Waals component of the surface free energy. We have found the water droplet contact angle ranging from ≈120° for the thickness of 50 nm to ≈100° for the thickness of 2300 nm. At the same time the surface free energy grows from ≈25 mJ/m2 for the thickness of 50 nm to ≈33 mJ/m2 for the thickness of 2300 nm. We propose two explanations for the observed thickness dependence of the wetting properties: influence of the non-dominant texture and/or non-monotonic size dependence of the particle surface energy.

  10. Optical spectroscopy of sputtered nanometer-thick yttrium iron garnet films

    SciTech Connect

    Jakubisova-Liskova, Eva Visnovsky, Stefan; Chang, Houchen; Wu, Mingzhong

    2015-05-07

    Nanometer (nm)-thick yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) films present interest for spintronics. This work employs spectral ellipsometry and magneto-optic Kerr effect (MOKE) spectra to characterize nm-thick YIG films grown on single-crystal Gd{sub 3}Ga{sub 5}O{sub 12} substrates by magnetron sputtering. The thickness (t) of the films ranges between 10 nm and 40 nm. Independent on t, the polar MOKE hysteresis loops saturate in the field of about 1.8 kOe, consistent with the saturation magnetization in bulk YIG (4πM{sub s} ≈ 1.75 kG). The MOKE spectrum measured at photon energies between 1.3 eV and 4.5 eV on the 38-nm-thick film agrees with that measured on single-crystal YIG bulk materials. The MOKE spectrum of the 12-nm-thick film still preserves the structure of the bulk YIG but its amplitude at lower photon energies is modified due to the fact that the radiation penetration depth exceeds 20 nm. The t dependence of the MOKE amplitude is consistent with MOKE calculations. The results indicate that the films are stoichiometric, strain free, without Fe{sup 2+}, and preserve bulk YIG properties down to t ≈ 10 nm.

  11. Full-field imprinting of sub-40 nm patterns

    NASA Astrophysics Data System (ADS)

    Yeo, Jeongho; Kim, Hoyeon; Eynon, Ben

    2008-03-01

    Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL (R)) is a unique patterning method that has been designed from the beginning to enable precise overlay to enable multilevel device fabrication. A photocurable low viscosity resist is dispensed dropwise to match the pattern density requirements of the device, thus enabling patterning with a uniform residual layer thickness across a field and across multiple wafers. Further, S-FIL provides sub-50 nm feature resolution without the significant expense of multi-element projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of imprint masks (templates). For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x imprint masks with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub-32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the imprint mask and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

  12. Scatterometry for EUV lithography at the 22-nm node

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin; Vartanian, Victor; Ren, Liping; Huang, George; Montgomery, Cecilia; Montgomery, Warren; Elia, Alex; Liu, Xiaoping

    2011-03-01

    Moore's Law continues to drive improvements to lithographic resolution to increase integrated circuit transistor density, improve performance, and reduce cost. For the 22 nm node and beyond, extreme ultraviolet lithography (EUVL) is a promising technology with λ=13.5 nm, a larger k1 value and lower cost of ownership than other available technologies. For small feature sizes, process control will be increasingly challenging, as small features will create measurement uncertainties, yet with tighter specifications. Optical scatterometry is a primary candidate metrology for EUV lithography process control. Using simulation and experimental data, this work will explore scatterometry's application to a typical lithography process being used for EUV development, which should be representative of lithography processes that will be utilized for EUV High Volume manufacturing (HVM). EUV lithography will be performed using much thinner photoresist thicknesses than were used at the 248nm or 193nm lithography generations, and will probably include underlayers for adhesion improvement; these new processes conditions were investigated in this metrological study.

  13. Encapsulated inorganic resist technology applied to 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Fedynyshyn, Theodore H.; Sinta, Roger F.; Sworin, Michael; Goodman, Russell B.; Doran, Scott P.; Sondi, I.; Matijevic, Egon

    2001-08-01

    In order to increase plasma etch selectivity in traditional single layer organic resists SiO2 nanoparticles have been added to typical 248nm resist formulations. Formulation modifications are necessary due to the dissolution acceleration effect of the particles. Surface functionalization of the nanoparticle surfaces with organic groups lessens this effect and allows the inclusion of acid labile groups. This allows for a wider formulation window and limits unexposed film thickness losses (UFTL). Both t- butyl ester groups and poly(t-butyl acrylate) have been used to achieve this effect. Encapsulated inorganic resist technology (EIRT) can be used as a single layer hard mask compatible with existing resist processing steps and replace complex and costly multilevel resist approaches. Lithogrpahic evaluations have been performed with electron beam, and with 248nm and 157nm projection systems. Greater transparency at 157nm is achieved by the addition of these materials, thus enabling the use of thicker films. High resolution imaging is demonstrated at these wavelengths.

  14. Step and flash imprint lithography for sub-100-nm patterning

    NASA Astrophysics Data System (ADS)

    Colburn, Matthew; Grot, Annette; Amistoso, Marie N.; Choi, Byung J.; Bailey, Todd C.; Ekerdt, John G.; Sreenivasan, S. V.; Hollenhorst, James; Willson, C. Grant

    2000-07-01

    Step and Flash Imprint Lithography (SFIL) is an alternative to photolithography that efficiently generates high aspect-ratio, sub-micron patterns in resist materials. Other imprint lithography techniques based on physical deformation of a polymer to generate surface relief structures have produced features in PMMA as small as 10 nm, but it is very difficult to imprint large depressed features or to imprint a thick films of resist with high aspect-ratio features by these techniques. SFIL overcomes these difficulties by exploiting the selectivity and anisotropy of reactive ion etch (RIE). First, a thick organic 'transfer' layer (0.3 micrometer to 1.1 micrometer) is spin coated to planarize the wafer surface. A low viscosity, liquid organosilicon photopolymer precursor is then applied to the substrate and a quartz template applied at 2 psi. Once the master is in contact with the organosilicon solution, a crosslinking photopolymerization is initiated via backside illumination with broadband UV light. When the layer is cured the template is removed. This process relies on being able to imprint the photopolymer while leaving the minimal residual material in the depressed areas. Any excess material is etched away using a CHF3/He/O2 RIE. The exposed transfer layer is then etched with O2 RIE. The silicon incorporated in the photopolymer allows amplification of the low aspect ratio relief structure in the silylated resist into a high aspect ratio feature in the transfer layer. The aspect ratio is limited only by the mechanical stability of the transfer layer material and the O2 RIE selectivity and anisotropy. This method has produced 60 nm features with 6:1 aspect ratios. This lithography process was also used to fabricate alternating arrays of 100 nm Ti lines on a 200 nm pitch that function as efficient micropolarizers. Several types of optical devices including gratings, polarizers, and sub-wavelength structures can be easily patterned by SFIL.

  15. Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Dieny, Bernard

    2014-08-04

    The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

  16. Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Dieny, Bernard

    2014-08-01

    The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

  17. Apker Award Talk: Atomic Beam Measurement of the Indium 6p1 / 2 Scalar Polarizability

    NASA Astrophysics Data System (ADS)

    Augenbraun, Benjamin

    2016-05-01

    We report on the first measurement of the scalar polarizability of the indium 6p1 / 2 -excited state using two-step laser spectroscopy in an atomic beam. This is one in a series of precise atomic structure measurements by the Majumder lab at Williams College, which serve as stringent tests of abinitio calculation methods for three-valence-electron systems. We stabilize a laser to the indium 5p1 / 2 --> 6s1 / 2 410 nm transition and scan a second laser across the 6s1 / 2 --> 6p1 / 2 1343 nm transition. The two laser beams are overlapped and interact transversely with a collimated atomic beam of indium. Two-tone FM spectroscopy allows us to observe the small (< 1 part in 103) IR absorption, and characteristic sideband features in the RF-demodulated lineshape provide built-in frequency calibration. Application of DC electric fields up to 20 kV/cm give rise to Stark shifts of order 100 MHz. Because our group has previously measured the difference in polarizabilities within the 410 nm transition, we can determine the 6p1 / 2 polarizability with no loss of precision. Preliminary results are in excellent agreement with recent theoretical calculations and can be used to infer accurate values for the indium 6 p - 5 d matrix elements.

  18. 21nm x-ray laser Thomson scattering of laser-heated exploding foil plasmas

    SciTech Connect

    Dunn, J; Rus, B; Mocek, T; Nelson, A J; Foord, M E; Rozmus, W; Baldis, H A; Shepherd, R L; Kozlova, M; Polan, J; Homer, P; Stupka, M

    2007-09-26

    Recent experiments were carried out on the Prague Asterix Laser System (PALS) towards the demonstration of a soft x-ray laser Thomson scattering diagnostic for a laser-produced exploding foil. The Thomson probe utilized the Ne-like zinc x-ray laser which was double-passed to deliver {approx}1 mJ of focused energy at 21.2 nm wavelength and lasting {approx}100 ps. The plasma under study was heated single-sided using a Gaussian 300-ps pulse of 438-nm light (3{omega} of the PALS iodine laser) at laser irradiances of 10{sup 13}-10{sup 14} W cm{sup -2}. Electron densities of 10{sup 20}-10{sup 22} cm{sup -3} and electron temperatures from 200 to 500 eV were probed at 0.5 or 1 ns after the peak of the heating pulse during the foil plasma expansion. A flat-field 1200 line mm{sup -1} variable-spaced grating spectrometer with a cooled charge-coupled device readout viewed the plasma in the forward direction at 30{sup o} with respect to the x-ray laser probe. We show results from plasmas generated from {approx}1 {micro}m thick targets of Al and polypropylene (C{sub 3}H{sub 6}). Numerical simulations of the Thomson scattering cross-sections will be presented. These simulations show electron peaks in addition to a narrow ion feature due to collective (incoherent) Thomson scattering. The electron features are shifted from the frequency of the scattered radiation approximately by the electron plasma frequency {+-}{omega}{sub pe} and scale as n{sub e}{sup 1/2}.

  19. 49 CFR 179.400-8 - Thickness of plates.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... the outer jacket shell may not be less than 7/16 inch. The minimum wall thickness, after forming, of the outer jacket heads may not be less than 1/2 inch and they must be made from steel specified in § 179.16(c). The annular space is to be evacuated, and the cylindrical portion of the outer...

  20. Measuring Thicknesses of Wastewater Films

    NASA Technical Reports Server (NTRS)

    Schubert, F. H.; Davenport, R. J.

    1987-01-01

    Sensor determines when thickness of film of electrically conductive wastewater on rotating evaporator drum exceeds preset value. Sensor simple electrical probe that makes contact with liquid surface. Made of materials resistant to chemicals in liquid. Mounted on shaft in rotating cylinder, liquid-thickness sensor extends toward cylinder wall so tip almost touches. Sensor body accommodates probe measuring temperature of evaporated water in cylinder.

  1. 1,2-Dibromo-3-chloropropane (DBCP)

    Integrated Risk Information System (IRIS)

    1,2 - Dibromo - 3 - chloropropane ( DBCP ) ; CASRN 96 - 12 - 8 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessm

  2. 1,1,2,2-Tetrachloroethane

    Integrated Risk Information System (IRIS)

    1,1,2,2 - Tetrachloroethane ; CASRN 79 - 34 - 5 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncar

  3. 1,2,4,5-Tetrachlorobenzene

    Integrated Risk Information System (IRIS)

    1,2,4,5 - Tetrachlorobenzene ; CASRN 95 - 94 - 3 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Nonca

  4. 1,1,1,2-Tetrachloroethane

    Integrated Risk Information System (IRIS)

    1,1,1,2 - Tetrachloroethane ; CASRN 630 - 20 - 6 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Nonca

  5. 1,1,1,2-Tetrafluoroethane

    Integrated Risk Information System (IRIS)

    1,1,1,2 - Tetrafluoroethane ; CASRN 811 - 97 - 2 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Nonca

  6. 1,2,3-triazolium ionic liquids

    SciTech Connect

    Luebke, David; Nulwala, Hunaid; Tang, Chau

    2014-12-09

    The present invention relates to compositions of matter that are ionic liquids, the compositions comprising substituted 1,2,3-triazolium cations combined with any anion. Compositions of the invention should be useful in the separation of gases and, perhaps, as catalysts for many reactions.

  7. Simultaneous three-wavelength continuous wave laser at 946 nm, 1319 nm and 1064 nm in Nd:YAG

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Zhao, Lianshui; Zhai, Pei; Xia, Jing; Fu, Xihong; Li, Shutao

    2013-01-01

    A continuous-wave (cw) diode-end-pumped Nd:YAG laser that generates simultaneous laser at the wavelengths 946 nm, 1319 nm and 1064 nm is demonstrated. The optimum oscillation condition for the simultaneous three-wavelength operation has been derived. Using the separation of the three output couplers, we obtained the maximum output powers of 0.24 W at 946 nm, 1.07 W at 1319 nm and 1.88 W at 1064 nm at the absorbed pump power of 11.2 W. A total output power of 3.19 W for the three-wavelength was achieved at the absorbed pump power of 11.2 W with optical conversion efficiency of 28.5%.

  8. Internal rotation for predicting conformational population of 1,2-difluorethane and 1,2-dichloroethane

    NASA Astrophysics Data System (ADS)

    Venâncio, Mateus F.; Dos Santos, Hélio F.; De Almeida, Wagner B.

    2016-06-01

    The contribution of internal rotation to the thermal correction of Gibbs free energy (ΔG) is estimated using the quantum pendulum model (QPM) to solve the characteristic Schrödinger equation. The procedure is applied to theoretical prediction of conformational population of 1,2-difluorethane (1,2-DFE) and 1,2-dichloroethane (1,2-DCE) molecules. The predicted population for the anti form was 37% and 75%, for 1,2-DFE and 1,2-DCE respectively, in excellent agreement with experimental gas phase data available, 37 ± 5% and 78 ± 5%. These results provide great support to the use of the QPM model to account for the low vibrational frequency modes effect on the calculation of thermodynamic properties.

  9. The dynamics of femtosecond pulsed laser removal of 20 nm Ni films from an interface

    NASA Astrophysics Data System (ADS)

    Schrider, Keegan J.; Torralva, Ben; Yalisove, Steven M.

    2015-09-01

    The dynamics of femtosecond laser removal of 20 nm Ni films on glass substrates was studied using time-resolved pump-probe microscopy. 20 nm thin films exhibit removal at two distinct threshold fluences, removal of the top 7 nm of Ni above 0.14 J/cm2, and removal of the entire 20 nm film above 0.36 J/cm2. Previous work shows the top 7 nm is removed through liquid spallation, after irradiation the Ni melts and rapidly expands leading to tensile stress and cavitation within the Ni film. This work shows that above 0.36 J/cm2 the 20 nm film is removed in two distinct layers, 7 nm and 13 nm thick. The top 7 nm layer reaches a speed 500% faster than the bottom 13 nm layer at the same absorbed fluence, 500-2000 m/s and 300-700 m/s in the fluence ranges studied. Significantly different velocities for the top 7 nm layer and bottom 13 nm layer indicate removal from an interface occurs by a different physical mechanism. The method of measuring film displacement from the development of Newton's rings was refined so it could be shown that the 13 nm layer separates from the substrate within 70 ps and accelerates to its final velocity within several hundred picoseconds. We propose that removal of the bottom 13 nm is consistent with heterogeneous nucleation and growth of vapor at the Ni-glass interface, but that the rapid separation and acceleration of the 13 nm layer from the Ni-glass interface requires consideration of exotic phases of Ni after excitation.

  10. Kinetics of 1,2-Dichloroethane and 1,2-Dibromoethane Biodegradation in Anaerobic Enrichment Cultures

    PubMed Central

    Yu, Rong; Peethambaram, Hari S.; Falta, Ronald W.; Verce, Matthew F.; Henderson, James K.; Bagwell, Christopher E.; Brigmon, Robin L.

    2013-01-01

    1,2-Dichloroethane (1,2-DCA) and 1,2-dibromoethane (ethylene dibromide [EDB]) contaminate groundwater at many hazardous waste sites. The objectives of this study were to measure yields, maximum specific growth rates (μ̂), and half-saturation coefficients (KS) in enrichment cultures that use 1,2-DCA and EDB as terminal electron acceptors and lactate as the electron donor and to evaluate if the presence of EDB has an effect on the kinetics of 1,2-DCA dehalogenation and vice versa. Biodegradation was evaluated at the high concentrations found at some industrial sites (>10 mg/liter) and at lower concentrations found at former leaded-gasoline sites (1.9 to 3.7 mg/liter). At higher concentrations, the Dehalococcoides yield was 1 order of magnitude higher when bacteria were grown with 1,2-DCA than when they were grown with EDB, while μ̂'s were similar for the two compounds, ranging from 0.19 to 0.52 day−1 with 1,2-DCA to 0.28 to 0.36 day−1 for EDB. KS was larger for 1,2-DCA (15 to 25 mg/liter) than for EDB (1.8 to 3.7 mg/liter). In treatments that received both compounds, EDB was always consumed first and adversely impacted the kinetics of 1,2-DCA utilization. Furthermore, 1,2-DCA dechlorination was interrupted by the addition of EDB at a concentration 100 times lower than that of the remaining 1,2-DCA; use of 1,2-DCA did not resume until the EDB level decreased close to its maximum contaminant level (MCL). In lower-concentration experiments, the preferential consumption of EDB over 1,2-DCA was confirmed; both compounds were eventually dehalogenated to their respective MCLs (5 μg/liter for 1,2-DCA, 0.05 μg/liter for EDB). The enrichment culture grown with 1,2-DCA has the advantage of a more rapid transition to 1,2-DCA after EDB is consumed. PMID:23263950

  11. influence of film thickness on optical constants of antimony-based bismuth-doped super-resolution mask layer

    NASA Astrophysics Data System (ADS)

    Lu, Xinmiao; Wu, Yiqun; Wang, Yang; Wei, Jinsong

    As the demand for ultrahigh density information storage continues to grow, recording mark size of several tens nanometer which is smaller than the optical diffraction limit is required in optical memory. Functional film super-resolution technique is one of practical approaches to overcome the optical diffraction limit. Optical constants are important parameters to optical films as super-resolution masks. In this paper, the influence of film thickness on optical constants of antimony-based bismuth-doped super-resolution mask layer is investigated. The structure of the samples with different thickness was studied by X-ray diffraction. The transmission spectrum was measured by spectrophotometry. The optical constants of the films in the range of 300-800 nm were measured by spectroscopic ellipsometry. The results show that the structure of the film transforms from amorphous state to crystal state when the thickness increases from 7 nm to 300 nm. In the range of 300-800 nm, the refractive index and extinction coefficient increase with increasing wavelength. The transmission decreases rapidly when the thickness increases from 7 nm to 30 nm. The influences of film thickness on optical constants are more significant in the thickness range of 7-50 nm than that in the thickness above 50 nm.

  12. Thick lanthanum zirconate buffer layers from water-based precursor solutions on Ni-5%W substrates

    SciTech Connect

    Narayanan, Vyshnavi; Lommens, Petra; De Buysser, Klaartje; Huehne, Ruben; Van Driessche, Isabel

    2011-11-15

    In this work, water-based precursor solutions suitable for dip-coating of thick La{sub 2}Zr{sub 2}O{sub 7} (LZO) buffer layers for coated conductors on Ni-5%W substrates were developed. The solutions were prepared based on chelate chemistry using water as the main solvent. The effect of polymer addition on the maximum crack-free thickness of the deposited films was investigated. This novel solution preparation method revealed the possibility to grow single, crack-free layers with thicknesses ranging 100-280 nm with good crystallinity and an in-plane grain misalignment with average FWHM of 6.55{sup o}. TEM studies illustrated the presence of nanovoids, typical for CSD-LZO films annealed under Ar-5%H{sub 2} gas flow. The appropriate buffer layer action of the film in preventing the Ni diffusion was studied using XPS. It was found that the Ni diffusion was restricted to the first 30 nm of a 140 nm thick film. The surface texture of the film was improved using a seed layer. - Graphical abstract: Thick LZO buffer layers from water-based precursor solutions were synthesized and their crystallinity, microstructure and buffer layer action were studied. The buffer layer action of the LZO layer was substantial to restrict the Ni penetration within 30 nm of a 140 nm thick film. Highlights: > LZO buffer layers with high thicknesses for use in coated conductors were prepared. > Prepared from water-based solutions. > Polymeric PVP increases the crack-free critical thickness of thick films. > Thick films showed good barrier action against Ni penetration. > Seed layers promote epitaxial growth of thick layers.

  13. Microstructure evolution with varied layer thickness in magnetron-sputtered Ni/C multilayer films

    PubMed Central

    Peng, Jichang; Li, Wenbin; Huang, Qiushi; Wang, Zhanshan

    2016-01-01

    The microstructure evolution of magnetron-sputtered Ni/C multilayers was investigated by varying the Ni and C layer thickness in the region of a few nanometers. For the samples having 2.6-nm-thick C layers, the interface width increases from 0.37 to 0.81 nm as the Ni layer thickness decreases from 4.3 to 1.3 nm. Especially for the samples with Ni layers less than 2.0 nm, the interface width changes significantly due to the discontinuously distributed Ni crystallites. For the samples having 2.8-nm-thick Ni layers, the interface width increases from 0.37 to 0.59 nm when the C layer thickness decreases from 4.3 to 0.7 nm. The evolution of interface microstructures with varied Ni and C layers is explained based on a proposed simple growth model of Ni and C layers. PMID:27515586

  14. Foveal Thickness Alterations in Patients with Migraine

    PubMed Central

    Cankaya, Cem; Tecellioglu, Mehmet

    2016-01-01

    Aim: To investigate the alterations in foveal retinal thickness (FT) values in patients with migraine and to reveal the correlations between FT and clinical characteristics of migraine disease. Methods: This study included sixty-eight eyes of 34 migraine patients [twenty-eight eyes of 14 patients with aura (group 1), and forty eyes of 20 patients without aura (group 2)] and forty eyes of 20 healthy volunteer who served as the control group (group 3). FT values were measured by optical coherence tomography (OCT) in each group. Results: Mean age of patients in group 1, 2, and 3 was 34.0± 6.82, 35.2±10.12, and 35.1± 6.85 years, respectively (p=0.84). Mean FT was 211.07±7.36, 220.0±12.01, and 221.85±12.27 in groups 1, 2, and 3, respectively. There was statistically significance among the group 1-2 and 1-3 (p=0.002 and p< 0.001). There was no statistically significance between group 2-3 (p=0.88). Conclusion: This study suggests that in particular migraine with aura may lead to a reduction in FT values. This finding can be explained by the blood flow decrease theory in migraine; however larger studies seem mandatory. PMID:27147787

  15. Can Homojunction Tunnel FETs Scale Below 10 nm?

    NASA Astrophysics Data System (ADS)

    Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Rahman, Rajib

    2016-01-01

    The main promise of tunnel FETs (TFETs) is to enable supply voltage ($V_{DD}$) scaling in conjunction with dimension scaling of transistors to reduce power consumption. However, reducing $V_{DD}$ and channel length ($L_{ch}$) typically deteriorates the ON- and OFF-state performance of TFETs, respectively. Accordingly, there is not yet any report of a high perfor]mance TFET with both low V$_{DD}$ ($\\sim$0.2V) and small $L_{ch}$ ($\\sim$6nm). In this work, it is shown that scaling TFETs in general requires scaling down the bandgap $E_g$ and scaling up the effective mass $m^*$ for high performance. Quantitatively, a channel material with an optimized bandgap ($E_g\\sim1.2qV_{DD} [eV]$) and an engineered effective mass ($m*^{-1}\\sim40 V_{DD}^{2.5} [m_0^{-1}]$) makes both $V_{DD}$ and $L_{ch}$ scaling feasible with the scaling rule of $L_{ch}/V_{DD}=30~nm/V$ for $L_{ch}$ from 15nm to 6nm and corresponding $V_{DD}$ from 0.5V to 0.2V.

  16. Nitrone Cycloadditions of 1,2-Cyclohexadiene

    PubMed Central

    Barber, Joyann S.; Styduhar, Evan D.; Pham, Hung V.; McMahon, Travis C.; Houk, K. N.; Garg, Neil K.

    2016-01-01

    We report the first 1,3-dipolar cycloadditions of 1,2-cyclohexadiene, a rarely exploited strained allene. 1,2-Cyclohexadiene is generated in situ under mild conditions and trapped with nitrones to give isoxazolidine products in synthetically useful yields. The reactions occur regioselectively and exhibit a notable endo preference, thus resulting in the controlled formation of two new bonds and two stereogenic centers. DFT calculations of stepwise and concerted reaction pathways are used to rationalize the observed selectivities. Moreover, the strategic manipulation of nitrone cycloadducts demonstrates the utility of this methodology for the assembly of compounds bearing multiple heterocyclic units. These studies showcase the exploitation of a traditionally avoided reactive intermediate in chemical synthesis. PMID:26854652

  17. Comparison of Failure Thickness and Critical Diameter of Nitromethane

    NASA Astrophysics Data System (ADS)

    Petel, Oren E.; Higgins, Andrew J.

    2006-07-01

    The critical diameter and failure thickness of both neat liquid nitromethane and a 65% nitromethane/35% nitroethane blend confined by aluminum are determined experimentally. A comparison of these two parameters provides insight into the failure mechanism of detonation in these explosives. If the failure of detonation in a critical charge diameter (or thickness) experiment is due to reaction quenching resulting from expansion losses (wave curvature), then it is expected that the failure thickness should be half the value of the critical diameter. The critical diameter and failure thickness of neat nitromethane confined in aluminum are found to be 2.5 mm and 0.75 mm respectively for a temperature range of 26 ± 1°C. The critical diameter and failure thickness of the 65NM/35NE blend confined in aluminum are found to be 6.2 mm and 1.7 mm respectively for a temperature range of 28 ± 1°C. The ratio of critical diameter to failure thickness for these experiments is found to lie between 3:1 and 4:1 rather than 2:1 as expected from wave curvature theory. By comparing the experimentally determined values of critical diameter and thickness for the test explosives and examining the failure patterns recovered on witness plates, a mechanism of propagation in thin rectangular channels is proposed based on complex wave interactions.

  18. Evaluation of Retinal and Choroidal Thickness in Fuchs' Uveitis Syndrome

    PubMed Central

    Ozsutcu, Mustafa

    2016-01-01

    Purpose. We aimed to investigate retinal and choroidal thickness in the eyes of patients with Fuchs' uveitis syndrome (FUS). Methods. Fifteen patients with unilateral FUS and 20 healthy control subjects were enrolled. Spectral domain optical coherence tomography (Spectralis HRA+OCT, 870 nm; Heidelberg Engineering, Heidelberg, Germany) was used to obtain retinal and choroidal thickness measurements. The retinal nerve fiber layer (RNFL) thickness, macular thickness, and choroidal thickness of the eyes with FUS were compared with the unaffected eye and the eyes of healthy control subjects. Results. The mean choroidal thickness at fovea and at each point within the horizontal nasal and temporal quadrants at 500 μm intervals to a distance of 1500 µm from the foveal center was significantly thinner in the affected eye of FUS patients compared with the unaffected eye of FUS patients or the eyes of healthy control subjects. However, there were no significant differences in RNFL or macular thickness between groups. Conclusions. Affected eyes in patients with FUS tend to have thinner choroids as compared to eyes of unaffected fellow eyes and healthy individuals, which might be a result of the chronic inflammation associated with the disease. PMID:27579176

  19. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    SciTech Connect

    Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

    2011-10-01

    The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  20. Impact of buffer layer and Pt thickness on the interface structure and magnetic properties in (Co/Pt) multilayers

    NASA Astrophysics Data System (ADS)

    Bersweiler, M.; Dumesnil, K.; Lacour, D.; Hehn, M.

    2016-08-01

    The influence of Pt thickness on the interface structure (roughness / intermixing) and magnetic properties has been investigated for (Co / Pt) multilayers sputtered on a Pt or a thin oxide (MgO or AlO x ) buffer layer. When Pt thickness increases from 1.2 nm–2.2 nm, we observe that the effective anisotropy increases with the Pt thickness, simultaneously with the decrease of roughness, i.e. the occurrence of sharper interfaces. Perpendicular magnetic anisotropy (PMA) is still achieved on the oxide buffer layers, but with a lower effective anisotropy correlated to more perturbed interfaces. The detailed analysis of the saturation magnetization shows that: (i) M s is significantly enhanced in the case of rough/intermixed interfaces, which is attributed to and discussed in the framework of Pt induced polarization, (ii) the change in volume dipolar anisotropy is the main factor responsible for the reduction of K eff for systems grown on oxides. Beyond the major role of volume dipolar contribution that reduces PMA, a supplemental positive contribution promoting PMA can be invoked for rough interfaces and large M s (deposit on oxide). This contribution is consistent with a dipolar surface anisotropy term and increases for rough interfaces, in contrast to the Néel surface anisotropy. These opposite variations may interestingly lead to an enhanced anisotropy in (Co / Pt) stackings grown on oxides compared to systems deposited on Pt, i.e. with sharper interfaces.

  1. Shape from equal thickness contours

    SciTech Connect

    Cong, G.; Parvin, B.

    1998-05-10

    A unique imaging modality based on Equal Thickness Contours (ETC) has introduced a new opportunity for 3D shape reconstruction from multiple views. We present a computational framework for representing each view of an object in terms of its object thickness, and then integrating these representations into a 3D surface by algebraic reconstruction. The object thickness is inferred by grouping curve segments that correspond to points of second derivative maxima. At each step of the process, we use some form of regularization to ensure closeness to the original features, as well as neighborhood continuity. We apply our approach to images of a sub-micron crystal structure obtained through a holographic process.

  2. Laser detection of material thickness

    DOEpatents

    Early, James W.

    2002-01-01

    There is provided a method for measuring material thickness comprising: (a) contacting a surface of a material to be measured with a high intensity short duration laser pulse at a light wavelength which heats the area of contact with the material, thereby creating an acoustical pulse within the material: (b) timing the intervals between deflections in the contacted surface caused by the reverberation of acoustical pulses between the contacted surface and the opposite surface of the material: and (c) determining the thickness of the material by calculating the proportion of the thickness of the material to the measured time intervals between deflections of the contacted surface.

  3. Equilibria of 1,1,2,-trichloro-1,2,2-trifluoroethane on activated carbons

    SciTech Connect

    Cho, S.Y.; Lee, Y.Y.

    1995-07-01

    ChloroFluoroCarbons (CFCs) are now considered to be the prime contribution to stratospheric ozone depletion. As a result, the use of activated carbons to adsorb specific CFCs has received great attention. In this paper, the equilibrium adsorption characteristics of 1,1,2-trichloro-1,2,2-trifluoroethane vapor on different-shaped carbons were studied. Adsorption isotherms of 1,2,2-trichloro-1,2,2-trifluoroethane on an activated carbon pellet and an activated carbon felt were measured. The equilibria of 1,1,2-trichloro-1,2,2-trifluoroethane on the activated carbon pellet having a dual pore structure were expressed by the Redlich-Peterson equation, and equilibrium constants were expressed as functions of temperature from 298 to 393 K. On the other hand, the equilibria of 1,1,2-trichloro-1,2,2-trifluoroethane on the activated carbon felt having a relatively uniform pore structure were interpreted by the Dubinin-Radushkevich correlation based on the micropore volume filling theory. The affinity coefficient was correlated by the molar polarization.

  4. 1,1,2-Trichloro-1,2,2-trifluoroethane (CFC-113)

    Integrated Risk Information System (IRIS)

    1,1,2 - Trichloro - 1,2,2 - trifluoroethane ( CFC - 113 ) ; CASRN 76 - 13 - 1 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health

  5. The SEMATECH Berkeley MET: extending EUV learning to 16-nm half pitch

    SciTech Connect

    Anderson, Christopher N.; Baclea-an, Lorie Mae; Denham, Paul E.; George, Simi; Goldberg, Kenneth A.; Jones, Michael; Smith, Nathan; Wallow, Thomas; Montgomery, Warren; Naulleau, Patrick P.

    2011-03-18

    Several high-performing resists identified in the past two years have been exposed at the 0.3-numerical-aperture (NA) SEMATECH Berkeley Microfield Exposure Tool (BMET) with an engineered dipole illumination optimized for 18-nm half pitch. Five chemically amplified platforms were found to support 20-nm dense patterning at a film thickness of approximately 45 nm. At 19-nm half pitch, however, scattered bridging kept all of these resists from cleanly resolving larger areas of dense features. At 18-nm half pitch, none of the resists were are able to cleanly resolve a single line within a bulk pattern. With this same illumination a directly imageable metal oxide hardmask showed excellent performance from 22-nm half pitch to 17-nm half pitch, and good performance at 16-nm half pitch, closely following the predicted aerial image contrast. This indicates that observed limitations of the chemically amplified resists are indeed coming from the resist and not from a shortcoming of the exposure tool. The imageable hardmask was also exposed using a Pseudo Phase-Shift-Mask technique and achieved clean printing of 15-nm half pitch lines and modulation all the way down to the theoretical 12.5-nm resolution limit of the 0.3-NA SEMATECH BMET.

  6. Improved Coal-Thickness Measurement

    NASA Technical Reports Server (NTRS)

    Barr, T. A.

    1984-01-01

    Summed signals and dielectric-filled antenna improve measurement. Improved FM radar for measuring thickness of coal seam eliminates spectrum splitting and reduces magnitude of echo from front coal surface.

  7. Metal thickness measurements using radiography

    NASA Astrophysics Data System (ADS)

    Achrekar, P. M.

    1986-04-01

    The present invention relates broadly to a radiographic inspection technique, and in particular to a metal thickness measurement method using radiography. The localized areas wherein the effective metal thickness is less than the minimum that is required for radiation shielding and which can render a shielding enclosure functionless, is readily determined. The invention comprises a process for assuring metal thickness in small regions. The actual metal thickness of small regions can be verified by comparing the optical densities of sections of the metal i.e., stepwedge. A comparator microphotometer, which compares optical densities of spectrum lines from spectrophotometers, compares the optical density of spectrum lines on an exposed spectrum plate (metal under test) with a standard plate (stepwedge).

  8. Edge-on thick discs

    NASA Astrophysics Data System (ADS)

    Kasparova, A.; Katkov, I.; Chilingarian, I.; Silchenko, O.; Moiseev, A.; Borisov, S.

    2016-06-01

    Although thick stellar discs are detected in nearly all edge-on disc galaxies, their formation scenarios still remain a matter of debate. Due to observational difficulties, there is a lack of information about their stellar populations. Using the Russian 6-m telescope BTA we collected deep spectra of thick discs in three edge-on early-type disc galaxies located in different environments: NGC4111 in a dense group, NGC4710 in the Virgo cluster, and NGC5422 in a sparse group. We see intermediate age (4 ‑ 5 Gyr) metal rich ([Fe/H] ~ ‑0.2 ‑ 0.0 dex) stellar populations in NGC4111 and NGC4710. On the other hand, NGC5422 does not harbour young stars, its only disc is thick and old (10 Gyr) and its α-element abundance suggests a long formation epoch implying its formation at high redshift. Our results prove the diversity of thick disc formation scenarios.

  9. Peripapillary choroidal thickness in childhood.

    PubMed

    Read, Scott A; Alonso-Caneiro, David; Vincent, Stephen J; Collins, Michael J

    2015-06-01

    Changes in the thickness of the invivo peripapillary choroid have been documented in a range of ocular conditions in adults; however, choroidal thickness in the peripapillary region of children has not been examined in detail. This study therefore aimed to investigate the thickness of the peripapillary choroid and the overlying retinal nerve fibre layer (RNFL) in a population of normal children with a range of refractive errors. Ninety-three children (37 myopes and 56 non-myopes) aged between 11 and 16 years, had measurements of peripapillary choroidal and RNFL thickness derived from enhanced depth imaging optical coherence tomography images (EDI-OCT, Heidelberg Spectralis). The average thickness was determined in a series of five 0.25 mm width concentric annuli (each divided into 8 equal sized 45° sectors) centred on the optic nerve head boundary, accounting for individual ocular magnification factors and the disc-fovea angle. Significant variations in peripapillary choroidal thickness were found to occur with both annulus location (p < 0.001) and sector position (p < 0.001) in this population of children. The innermost annulus (closest to the edge of the optic disc) exhibited the thinnest choroid (mean 77 ± 16 μm) and the outermost annulus, the thickest choroid (191 ± 52 μm). The choroid was thinnest inferior to the optic nerve head (139 ± 38 μm) and was thickest in the superior temporal sector (157 ± 40 μm). Significant differences in the distribution of choroidal thickness were also associated with myopia, with myopic children having significantly thinner choroids in the inner and outer annuli of the nasal and temporal sectors respectively (p < 0.001). RNFL thickness also varied significantly with annulus location and sector (p < 0.001), and showed differences in thickness distribution associated with refractive error. This study establishes the normal variations in the thickness of the peripapillary choroid with radial distance and azimuthal angle

  10. Thin film type 248-nm bottom antireflective coatings

    NASA Astrophysics Data System (ADS)

    Enomoto, Tomoyuki; Nakayama, Keisuke; Mizusawa, Kenichi; Nakajima, Yasuyuki; Yoon, Sangwoong; Kim, Yong-Hoon; Kim, Young-Ho; Chung, Hoesik; Chon, Sang Mun

    2003-06-01

    A frequent problem encountered by photoresists during the manufacturing of semiconductor device is that activating radiation is reflected back into the photoresist by the substrate. So, it is necessary that the light reflection is reduced from the substrate. One approach to reduce the light reflection is the use of bottom anti-reflective coating (BARC) applied to the substrate beneath the photoresist layer. The BARC technology has been utilized for a few years to minimize the reflectivity. As the chip size is reduced to sub 0.13-micron, the photoresist thickness has to decrease with the aspect ratio being less than 3.0. Therefore, new Organic BARC is strongly required which has the minimum reflectivity with thinner BARC thickness and higher etch selectivity towards resist. SAMSUNG Electronics has developed the advanced Organic BARC with Nissan Chemical Industries, Ltd. and Brewer Science, Inc. for achieving the above purpose. As a result, the suitable high performance SNAC2002 series KrF Organic BARCs were developed. Using CF4 gas as etchant, the plasma etch rate of SNAC2002 series is about 1.4 times higher than that of conventional KrF resists and 1.25 times higher than the existing product. The SNAC2002 series can minimize the substrate reflectivity at below 40nm BARC thickness, shows excellent litho performance and coating properties.

  11. Optical metrology solutions for 10nm films process control challenges

    NASA Astrophysics Data System (ADS)

    Mahendrakar, Sridhar; Vaid, Alok; Venkataraman, Kartik; Lenahan, Michael; Seipp, Steven; Fang, Fang; Saxena, Shweta; Hu, Dawei; Yoon, Nam Hee; Song, Da; Camp, Janay; Ren, Zhou

    2016-03-01

    Controlling thickness and composition of gate stack layers in logic and memory devices is critical to ensure transistor performance meets requirements, especially at 10nm node due to the 3-d geometry of devices and tight process budget. It has become necessary to measure and control each layer in the gate stack before and after dielectric and metal gate deposition sequences. A typical gate stack can have 5-7 layers including the interfacial layer, high-k dielectric, metal gate stack, work function layers, and cap layers. Similarly, PMOS channel strain is controlled using a graded SixGe1-x stack grown epitaxially over fins in the source/drain regions. This graded stack can have 2-4 layers of different thicknesses and Ge concentrations. This paper discusses the benefit of using spectroscopic ellipsometry with multiple angles of incidence to accurately and precisely determine the thickness of individual layers in critical gate layer stacks at various process steps on planar and grating surfaces. We will also show the benefit of using an advanced laser-based ellipsometer, for ultra-precise measurement of the gate interfacial layer oxides.

  12. High accuracy wall thickness loss monitoring

    NASA Astrophysics Data System (ADS)

    Gajdacsi, Attila; Cegla, Frederic

    2014-02-01

    Ultrasonic inspection of wall thickness in pipes is a standard technique applied widely in the petrochemical industry. The potential precision of repeat measurements with permanently installed ultrasonic sensors however significantly surpasses that of handheld sensors as uncertainties associated with coupling fluids and positional offsets are eliminated. With permanently installed sensors the precise evaluation of very small wall loss rates becomes feasible in a matter of hours. The improved accuracy and speed of wall loss rate measurements can be used to evaluate and develop more effective mitigation strategies. This paper presents an overview of factors causing variability in the ultrasonic measurements which are then systematically addressed and an experimental setup with the best achievable stability based on these considerations is presented. In the experimental setup galvanic corrosion is used to induce predictable and very small wall thickness loss. Furthermore, it is shown that the experimental measurements can be used to assess the effect of reduced wall loss that is produced by the injection of corrosion inhibitor. The measurements show an estimated standard deviation of about 20nm, which in turn allows us to evaluate the effect and behaviour of corrosion inhibitors within less than an hour.

  13. Complementary metal-oxide-semiconductor compatible 1060 nm photodetector with ultrahigh gain under low bias.

    PubMed

    Hall, David; Li, Baoxia; Liu, Yu-Hsin; Yan, Lujiang; Lo, Yu-Hwa

    2015-10-01

    Falling on the tail of the absorption spectrum of silicon, 1060 nm Si detectors often suffer from low responsivity unless an exceedingly thick absorption layer is used, a design that requires high operation voltage and high purity epitaxial or substrate material. We report an all-silicon 1060 nm detector with ultrahigh gain to allow for low operation voltage (<4  V) and thin (200 nm) effective absorption layer, using the recently discovered cycling excitation process. With 1% external quantum efficiency, a responsivity of 93 A/W was demonstrated in a p/n junction device compatible with the complementary metal-oxide-semiconductor process. PMID:26421551

  14. Ion transport in sub-5-nm graphene nanopores

    NASA Astrophysics Data System (ADS)

    Suk, Myung E.; Aluru, N. R.

    2014-02-01

    Graphene nanopore is a promising device for single molecule sensing, including DNA bases, as its single atom thickness provides high spatial resolution. To attain high sensitivity, the size of the molecule should be comparable to the pore diameter. However, when the pore diameter approaches the size of the molecule, ion properties and dynamics may deviate from the bulk values and continuum analysis may not be accurate. In this paper, we investigate the static and dynamic properties of ions with and without an external voltage drop in sub-5-nm graphene nanopores using molecular dynamics simulations. Ion concentration in graphene nanopores sharply drops from the bulk concentration when the pore radius is smaller than 0.9 nm. Ion mobility in the pore is also smaller than bulk ion mobility due to the layered liquid structure in the pore-axial direction. Our results show that a continuum analysis can be appropriate when the pore radius is larger than 0.9 nm if pore conductivity is properly defined. Since many applications of graphene nanopores, such as DNA and protein sensing, involve ion transport, the results presented here will be useful not only in understanding the behavior of ion transport but also in designing bio-molecular sensors.

  15. Ion transport in sub-5-nm graphene nanopores

    SciTech Connect

    Suk, Myung E.; Aluru, N. R.

    2014-02-28

    Graphene nanopore is a promising device for single molecule sensing, including DNA bases, as its single atom thickness provides high spatial resolution. To attain high sensitivity, the size of the molecule should be comparable to the pore diameter. However, when the pore diameter approaches the size of the molecule, ion properties and dynamics may deviate from the bulk values and continuum analysis may not be accurate. In this paper, we investigate the static and dynamic properties of ions with and without an external voltage drop in sub-5-nm graphene nanopores using molecular dynamics simulations. Ion concentration in graphene nanopores sharply drops from the bulk concentration when the pore radius is smaller than 0.9 nm. Ion mobility in the pore is also smaller than bulk ion mobility due to the layered liquid structure in the pore-axial direction. Our results show that a continuum analysis can be appropriate when the pore radius is larger than 0.9 nm if pore conductivity is properly defined. Since many applications of graphene nanopores, such as DNA and protein sensing, involve ion transport, the results presented here will be useful not only in understanding the behavior of ion transport but also in designing bio-molecular sensors.

  16. Amputee socks: how does sock ply relate to sock thickness?

    PubMed Central

    Sanders, Joan E; Cagle, John C; Harrison, Daniel S; Karchin, Ari

    2015-01-01

    Background The term “sock ply” may be a source of confusion in prosthetics practice, because there may not be a consistent relationship between sock ply and sock thickness. Objectives The purpose of this study was to characterize how sock ply related to sock thickness for different sock materials commonly used in limb prosthetics. We also evaluated how sock thickness changed under loading conditions experienced while wearing a lower-limb prosthesis compared with unstressed. Study Design Experimental. Mechanical assessment. Methods Seven sock materials of varying ply were tested using a custom instrument. Sock thickness under eight different compressive stress conditions and two different in-plane tensile strain conditions were measured. Results For socks woven from a single material, thickness under walking stance phase conditions averaged 0.7, 1.2, and 1.5 mm for 1, 3, and 5-ply, respectively. For socks woven from several materials, the corresponding results were 0.4, 0.7, and 0.8 mm, respectively. Sock ply did not sum, e.g. a 3-ply sock was not three times the thickness of a 1-ply sock. Conclusions Sock thickness and compressive stiffness are strongly dependent upon sock material and interface pressure. Clinical Relevance Data may be useful towards selecting socks during fitting and towards understanding volume changes induced by adding socks. PMID:22228614

  17. Stereodynamics of small 1,2-dialkyldiaziridines.

    PubMed

    Kamuf, Matthias; Trapp, Oliver

    2013-04-01

    Diaziridines are very interesting representatives of organic compounds containing stereogenic nitrogen atoms. In particular, 1,2-dialkyldiaziridines show extraordinarily high stereointegrity. The lone electron pairs of the nitrogen atoms are in trans configuration, avoiding a four-electron repulsive interaction. Furthermore, the trans configuration of the substituents at the nitrogen atoms is energetically favored because of reduced steric interactions. Therefore only two stereoisomers (enantiomers) are observed. At elevated temperatures the enantiomers are interconverting because of the limited stereointegrity of the chirotopic nitrogen atoms. The enantiomerization rate constants and the activation parameters of interconversion are of great interest. Here, we investigated the stereodynamics of a set of small 1,2-dialkyldiaziridines bearing short substituents (Me, Et, iPr, tBu), using enantioselective dynamic gas chromatography (DGC). Separation of enantiomers of all compounds, including the highly volatile 1,2-dimethyldiaziridine, was achieved using heptakis(2,3-di-O-ethyl-6-O-tert-butyldimethylsilyl)-β-cyclodextrin in 50% PS086 (w/w) as chiral stationary phase in fused silica capillaries with a length of up to 50 m. Measurements at variable temperatures were performed and reaction rate constants were determined using the unified equation of chromatography implemented in the software DCXplorer. The activation barriers at room temperature for 1-(tert-butyl)-2-ethyldiaziridine, ΔG(╪)(298K) = 123.8 kJ mol(-1) (ΔH(╪) = 115.5±2.9 kJ mol(-1), ΔS(╪) = -28±1 J mol(-1) K(-1)), and 1-ethyl-2-isopropyldiaziridine, ΔG(╪)(298K) = 124.2 kJ mol(-1) (ΔH(╪) = 113.1±2.4 kJ mol(-1), ΔS(╪) = -37±2 J mol(-1) K(-1)), were determined, representing some of the highest values observed for nitrogen inversion in diaziridines. PMID:23401088

  18. (1+2)-dimensional strongly nonlocal solitons

    SciTech Connect

    Ouyang Shigen; Guo Qi

    2007-11-15

    Approximate solutions of (1+2)-dimensional strongly nonlocal solitons (SNSs) are presented. It is shown that the power of a SNS in a nematic liquid crystal is in direct proportion to the second power of the degree of nonlocality, the power of a SNS in a nonlocal medium with a logarithmic nonlocal response is in inverse proportion to the second power of its beamwidth, and the power of a SNS in a nonlocal medium with an sth-power decay nonlocal response is in direct proportion to the (s+2)th power of the degree of nonlocality.

  19. Spin-1/2 Optical Lattice Clock

    SciTech Connect

    Lemke, N. D.; Ludlow, A. D.; Barber, Z. W.; Fortier, T. M.; Diddams, S. A.; Jiang, Y.; Jefferts, S. R.; Heavner, T. P.; Parker, T. E.; Oates, C. W.

    2009-08-07

    We experimentally investigate an optical clock based on {sup 171}Yb (I=1/2) atoms confined in an optical lattice. We have evaluated all known frequency shifts to the clock transition, including a density-dependent collision shift, with a fractional uncertainty of 3.4x10{sup -16}, limited principally by uncertainty in the blackbody radiation Stark shift. We measured the absolute clock transition frequency relative to the NIST-F1 Cs fountain clock and find the frequency to be 518 295 836 590 865.2(0.7) Hz.

  20. Tailoring of Luminous Transmittance upon Switching for Thermochromic VO2 Films by Thickness Control

    NASA Astrophysics Data System (ADS)

    Xu, Gang; Jin, Ping; Tazawa, Masato; Yoshimura, Kazuki

    2004-01-01

    The difference in luminous transmittance (Δ Tlum) upon switching of VO2 films strongly affects its solar controllability when used as a thermochromic window. It was found that Δ Tlum is controllable by film thickness. Optical calculation for a VO2 film on quartz glass revealed that the low-temperature semiconductor phase exhibits lower Tlum than the high-temperature metallic phase for thickness below 50 nm, while the relationship is reversed above 50 nm. The calculation was confirmed by film deposition and measurement. Maximum Δ Tlum is located near 80 nm. An enhanced Δ Tlum contributes largely to solar efficiency.

  1. RF magnetron sputtering of thick platinum coatings on glass microspheres

    SciTech Connect

    Meyer, S.F.; Hsieh, E.J.; Burt, R.J.

    1980-05-28

    Thick platinum coatings on glass microspheres are needed for proposed Laser Fusion targets. The spherical nature of these substrates coupled with the small dimensions (approx. 100 ..mu..m OD) make it difficult to achieve a smooth and uniform coating. Coating problems encountered include a rough surface and porous microstructure from the oblique incidence and lack of temperature and bias control, clumping of the microspheres causing non-uniformities, and particle accumulation causing cone defects. Sputtering parameters significantly affecting the coatings include total pressure, DC substrate bias, and the addition of doping gases. Using an ultrasonic vibrating screened cage and RF magnetron Sputtergun, we have successfully batch coated microspheres with up to 6 ..mu..m of Pt, with a surface roughness of 200 nm, thickness non-concentricity of 300 nm, and density greater than 98% of bulk Pt.

  2. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

    NASA Astrophysics Data System (ADS)

    Pešić, Milan; Knebel, Steve; Geyer, Maximilian; Schmelzer, Sebastian; Böttger, Ulrich; Kolomiiets, Nadiia; Afanas'ev, Valeri V.; Cho, Kyuho; Jung, Changhwa; Chang, Jaewan; Lim, Hanjin; Mikolajick, Thomas; Schroeder, Uwe

    2016-02-01

    During dynamic random access memory (DRAM) capacitor scaling, a lot of effort was put searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very promising results for a SrTiO3 based capacitor with a record low capacitance equivalent thickness value of 0.2 nm at target leakage current are presented. Due to the material properties of SrTiO3 films (high vacancy concentration and low band gap), which are leading to an increased leakage current, a physical thickness of at least 8 nm is required at target leakage specifications. However, this physical thickness would not fit into an 18 nm DRAM structure. Therefore, two different new approaches to develop a new ZrO2 based DRAM capacitor stack by changing the inter-layer material from Al2O3 to SrO and the exchange of the top electrode material from TiN to Pt are presented. A combination of these two approaches leads to a capacitance equivalent thickness value of 0.47 nm. Most importantly, the physical thickness of <5 nm for the dielectric stack is in accordance with the target specifications. Detailed evaluation of the leakage current characteristics leads to a capacitor model which allows the prediction of the electrical behavior with thickness scaling.

  3. Measurement of absolute optical thickness distribution of a mask-glass by wavelength tuning interferometry

    NASA Astrophysics Data System (ADS)

    Hibino, Kenichi; Yangjin, Kim; Bitou, Youichi; Ohsawa, Sonko; Sugita, Naohiko; Mitsuishi, Mamoru

    2008-08-01

    The surface flatness and the uniformity in thickness and refractive index of a mask-blank glass have been requested in semiconductor industry. The absolute optical thickness of a mask-blank glass of seven-inch square and 3mm thickness was measured by three-surface interferometry in a wavelength tuning Fizeau interferometer. Wavelength-tuning interferometry can separate in frequency space the three interference signals of the surface shape and the optical thickness. The wavelength of a tunable laser diode source was scanned linearly from 632 nm to 642 nm and a CCD detector recorded two thousand interference images. The number of phase variation of the interference fringes during the wavelength scanning was counted by a temporal discrete Fourier transform. The initial and final phases of the interferograms before and after the scanning were measured by a phase shifting technique with fine tunings of the wavelengths at 632 nm and 642 nm. The optical thickness defined by the group refractive index at the central wavelength of 337 nm can be measured by this technique. Experimental results show that the cross talk in multiple-surface interferometry caused a systematic error of 2.0 microns in the measured optical thickness.

  4. Change in Tear Film Lipid Layer Thickness, Corneal Thickness, Volume and Topography after Superficial Cauterization for Conjunctivochalasis

    PubMed Central

    Chan, Tommy C. Y.; Ye, Cong; Ng, Paul KF; Li, Emmy Y. M.; Yuen, Hunter K. L.; Jhanji, Vishal

    2015-01-01

    We evaluated the change in tear film lipid layer thickness, corneal thickness, volume and topography after superficial cauterization of symptomatic conjunctivochalasis. Bilateral superficial conjunctival cauterization was performed in 36 eyes of 18 patients with symptomatic conjunctivochalasis. The mean age of patients (12 males, 6 females) was 68.6 ± 10.9 years (range: 44–83 years). Preoperatively, 28 eyes (77.8%) had grade 1 conjunctivochalasis, and 8 eyes (22.2%) had grade 2 conjunctivochalasis. At 1 month postoperatively, the severity of conjunctivochalasis decreased significantly (p < 0.001) and 29 eyes (80.6%) had grade 0 conjunctivochalasis whereas 7 eyes (19.4%) had grade 1 conjunctivochalasis. The mean Ocular Surface Disease Index score decreased from 31.5 ± 15.2 preoperatively to 21.5 ± 14.2 at the end of 1 month postoperatively (p = 0.001). There was a statistically significant increase in mean tear film lipid layer thickness 1 month after the surgery (49.6 ± 16.1 nm vs 62.6 ± 21.6 nm; p < 0.001). The central corneal thickness, thinnest corneal thickness and corneal volume decreased significantly postoperatively (p < 0.001). Our study showed that superficial conjunctival cauterization is an effective technique for management of conjunctivochalasis in the short term. An increase in tear film lipid layer thickness along with a decrease in corneal thickness and volume were observed after surgical correction of conjunctivochalasis. PMID:26184418

  5. Progress in determining the thickness and distribution of volcanic materials on Mars

    NASA Technical Reports Server (NTRS)

    Dehon, R. A.

    1987-01-01

    Volcanic plains and constructs comprise over half the surface of Mars. Volume estimates require sensible estimates of the thickness of volcanic materials. The completion of the 1:2 M Viking photomosaics and a refined geologic map based on Viking photography set the stage for improved thickness studies and volume estimates. Currently, a revised (but incomplete) data base of 740 partially buried craters was compiled using Mars photomosaics at 1:2 M for initial identification and measurement.

  6. Simultaneous triple 914 nm, 1084 nm, and 1086 nm operation of a diode-pumped Nd:YVO4 laser

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Xia, Jing; Liu, Huilong; Pu, Xiaoyun

    2014-10-01

    We report a diode-pumped continuous-wave (cw) triple-wavelength Nd:YVO4 laser operating at 914, 1084, and 1086 nm. A theoretical analysis has been introduced to determine the threshold conditions for simultaneous triple-wavelength laser. Using a T-shaped cavity, we realized an efficient triple-wavelength operation at 4F3/2→4I9/2 and 4F3/2→4I11/2 transitions for Nd:YVO4 crystal, simultaneously. At an absorbed pump power of 16 W (or 25 W of incident pump power), the maximum output power was 2.3 W, which included 914 nm, 1084 nm, and 1086 nm three wavelengths, and the optical conversion efficiency with respect to the absorbed pump power was 14.4%.

  7. Metrology Challenges for 45 nm Strained-Si Devices

    NASA Astrophysics Data System (ADS)

    Vartanian, V.; Sadaka, M.; Zollner, S.; Thean, A. V.-Y.; White, T.; Nguyen, B.-Y.; Zavala, M.; McCormick, L.; Prabhu, L.; Eades, D.; Parsons, S.; Collard, H.; Kim, K.; Jiang, J.; Dhandapani, V.; Hildreth, J.; Powers, R.; Spencer, G.; Ramani, N.; Mogab, J.; Kottke, M.; Canonico, M.; Xie, Q.; Wang, X.-D.; Vella, J.; Contreras, L.; Theodore, D.; Lu, B.; Kriske, T.; Gregory, R.; Liu, R.

    2005-09-01

    The semiconductor industry has sustained its historical exponential performance gains by aggressively scaling transistor dimensions. However, as devices approach sub-100 nm dimensions, scaling becomes more challenging and new materials are required to overcome the fundamental physical limits imposed by existing materials. For example, as power supply voltages continue to decrease with successive scaling, enhanced carrier mobility using biaxially tensile-strained-Si on SOI or on bulk substrates have become viable options to sustain continual drive current increases without traditional scaling. Although the addition of strained-Si to conventional MOSFET devices is compatible with existing mainstream CMOS process technology, there are new device and process integration challenges, wafer quality monitoring demands, and stringent requirements for film morphology and strain uniformity, imposing new demands on material characterization. Material requirements for strained-Si CMOS devices include homogeneous Si or SiGe film thickness, Ge composition, strain distribution to maintain uniform device performance. Also important are having good interface quality and low defect density (misfit and threading dislocation densities below 1e4/cm2) to ensure high minority carrier lifetimes and transconductance, and low surface roughness (<3Å RMS) to minimize the impact of interface scattering on carrier mobilities. Non-destructive, in-line metrology techniques include spectroscopic ellipsometry (SE) for film thickness and Ge composition, xray reflectivity (XRR) for thickness, density, and roughness measurements, xray fluorescence (XRF) for Ge composition, UV-Raman spectroscopy for channel strain characterization, IR photoluminescence (PL) for defect detection, and xray diffraction (XRD) for film thickness, Ge content, and strain measurement. While most of these techniques are well established in the semiconductor industry, some will require performance enhancements and development

  8. Portable x-ray fluorescence spectrometer for coating thickness measurement

    SciTech Connect

    Carapelle, Alain; Fleury-Frenette, Karl; Collette, Jean-Paul; Garnir, Henri-Pierre; Harlet, Philippe

    2007-12-15

    A handheld x-ray spectrometer has been realized and tested. The purpose of the device is to measure the thickness of coated samples in the range of 1-1500 nm in an industrial environment. Accuracy of {approx}3% has been achieved in this range with a measurement time of 1 min. Automated software has been implemented to allow utilization by a nonspecialist operator. An automated calibration procedure, based on measurements of reference samples, is used.

  9. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence

    NASA Astrophysics Data System (ADS)

    Sarwar, A. T. M. Golam; May, Brelon J.; Chisholm, Matthew F.; Duscher, Gerd J.; Myers, Roberto C.

    2016-04-01

    By quantum confining GaN at monolayer thickness with AlN barriers inside of a nanowire, deep ultraviolet LEDs are demonstrated. Full three-dimensional strain dependent energy band simulations are carried out within multiple quantum disk (MQD) GaN/AlN nanowire superlattice heterostructures. It is found that, even within the same nanowire MQD, the emission energy of the ultrathin GaN QDs varies from disk to disk due to the changing strain distribution and polarization charge induced energy band bending along the axial nanowire direction. MQD heterostructures are grown by plasma-assisted molecular beam epitaxy to form self-assembled catalyst-free nanowires with 1 to 2 monolayer thick GaN insertions within an AlN matrix. Photoluminescence peaks are observed at 295 nm and 283 nm from the 2 ML and 1 ML thick MQD samples, respectively. Polarization-doped nanowire LEDs are grown incorporating 1 ML thick GaN MQD active regions from which we observe deep ultraviolet electroluminescence. The shortest LED wavelength peak observed is 240 nm and attributed to electron hole recombination within 1 ML thick GaN QDs.

  10. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence

    DOE PAGESBeta

    Chisholm, Matthew F.; Golam Sarwar, A. T. M.; Myers, Roberto C.; Mays, Brelon J.; Duscher, Gerd J.

    2016-03-18

    By quantum confining GaN at monolayer thickness with AlN barriers inside of a nanowire, deep ultraviolet LEDs are demonstrated. Full three-dimensional strain dependent energy band simulations are carried out within multiple quantum disk (MQD) GaN/AlN nanowire superlattice heterostructures. It is found that, even within the same nanowire MQD, the emission energy of the ultrathin GaN QDs varies from disk to disk due to the changing strain distribution and polarization charge induced energy band bending along the axial nanowire direction. MQD heterostructures are grown by plasma-assisted molecular beam epitaxy to form self-assembled catalyst-free nanowires with 1 to 2 monolayer thick GaNmore » insertions within an AlN matrix. Photoluminescence peaks are observed at 295 nm and 283 nm from the 2 ML and 1 ML thick MQD samples, respectively. Polarization-doped nanowire LEDs are grown incorporating 1 ML thick GaN MQD active regions from which we observe deep ultraviolet electroluminescence. As a result, the shortest LED wavelength peak observed is 240 nm and attributed to electron hole recombination within 1 ML thick GaN QDs.« less

  11. The SERS spectrum of 1,2-diaminoanthraquinone studied on silver colloid

    NASA Astrophysics Data System (ADS)

    Lopes, José Guilherme S.; Santos, Paulo S.

    2005-06-01

    1,2-Diaminoanthraquinone (1,2-DAAQ) was recently shown to recognize several anions selectively. In the presence of fluoride, it gives origin to a strongly coloured solution, as a consequence of a strong absorption band at ca. 550 nm. The detailed nature of such interaction is not known, although there are evidences for the formation of a hydrogen bonding involving the anion and the amino moieties. In particular, the use of resonance Raman spectroscopy, that would be one of techniques of choice for unveiling the nature of the chromophoric moiety responsible for the coloured solutions of 1,2-DAAQ with anions, is precluded by the intense fluorescence over the visible region. In the present work the SERS technique using silver colloid was employed to overcome such difficulties, besides aiming to reveal the interaction site of 1,2-DAAQ with the surface of the silver colloidal particles. In this work it was possible to determine that the site of the 1,2-DAAQ/F - interaction is one of the amino moieties of the molecule. Such interaction involves a hydrogen bonding of moderate strength. As a consequence of such interaction, the CT transition involving the amino moiety and the π system of 1,2-DAAQ is shifted to lower energies. In the presence of 1,2-DAAQ it appears two new bands at ca. 530 and 405 nm in the silver colloidal solution, assigned to silver aggregates of different sizes. Excitation of the SERS spectra at several wavelengths show that depending on the closeness of the excitation to the CT transition of 1,2-DAAQ, the RR contribution to the SERS enhancement can be significant. The outstanding solvatochromic behavior of 1,2-DAAQ, as shown by its UV-Vis spectra in several solvents, is not reflected in the SERS spectra at two different solvents (dichloromethane and acetonitrile) that show slight differences both in frequency values and relative intensities.

  12. Influence of film thickness on laser ablation threshold of transparent conducting oxide thin-films

    NASA Astrophysics Data System (ADS)

    Rung, S.; Christiansen, A.; Hellmann, R.

    2014-06-01

    We report on a comprehensive study of the laser ablation threshold of transparent conductive oxide thin films. The ablation threshold is determined for both indium tin oxide and gallium zinc oxide as a function of film thickness and for different laser wavelengths. By using a pulsed diode pumped solid state laser at 1064 nm, 532 nm, 355 nm and 266 nm, respectively, the relationship between optical absorption length and film thickness is studied. We find that the ablation threshold decreases with increasing film thickness in a regime where the absorption length is larger than the film thickness. In turn, the ablation threshold increases in case the absorption length is smaller than the film thickness. In particular, we observe a minimum of the ablation threshold in a region where the film thickness is comparable to the absorption length. To the best of our knowledge, this behaviour previously predicted for thin metal films, has been unreported for all three regimes in case of transparent conductive oxides, yet. For industrial laser scribing processes, these results imply that the efficiency can be optimized by using a laser where the optical absorption length is close to the film thickness.

  13. How thick are lunar mare basalts

    NASA Technical Reports Server (NTRS)

    Hoerz, F.

    1978-01-01

    It is argued that De Hon's estimates of the thickness of lunar mare basalts, made by analyzing 'ghost' craters on mare surfaces, were inflated as the result of the crater morphometric data of Pike (1977) to reconstruct rim heights of degraded craters. Crater rim heights of 82 randomly selected highland craters of various states of degradation were determined, and median rim height was compared to that of corresponding fresh impact structures. Results indicate that the thickness estimates of De Hon may be reduced by a factor of 2, and that the total volume of mare basalt produced throughout lunar history could be as little as 1-2 million cubic kilometers. A survey of geochemical and petrographic evidence indicates that lateral transport of regolith components over distances of much greater than 10 km is relatively inefficient; it is suggested that vertical mixing of a highland substrate underlying the basaltic fill may have had a primordial role in generating the observed mare width distributions and high concentrations of exotic components in intrabasin regoliths.

  14. Tube wall thickness measurement apparatus

    DOEpatents

    Lagasse, Paul R.

    1987-01-01

    An apparatus for measuring the thickness of a tube's wall for the tube's entire length and circumference by determining the deviation of the tube wall thickness from the known thickness of a selected standard item. The apparatus comprises a base and a first support member having first and second ends. The first end is connected to the base and the second end is connected to a spherical element. A second support member is connected to the base and spaced apart from the first support member. A positioning element is connected to and movable relative to the second support member. An indicator is connected to the positioning element and is movable to a location proximate the spherical element. The indicator includes a contact ball for first contacting the selected standard item and holding it against the spherical element. The contact ball then contacts the tube when the tube is disposed about the spherical element. The indicator includes a dial having a rotatable needle for indicating the deviation of the tube wall thickness from the thickness of the selected standard item.

  15. Tube wall thickness measurement apparatus

    DOEpatents

    Lagasse, P.R.

    1985-06-21

    An apparatus for measuring the thickness of a tube's wall for the tube's entire length and radius by determining the deviation of the tube wall thickness from the known thickness of a selected standard item. The apparatus comprises a base and a first support member having first and second ends. The first end is connected to the base and the second end is connected to a spherical element. A second support member is connected to the base and spaced apart from the first support member. A positioning element is connected to and movable relative to the second support member. An indicator is connected to the positioning element and is movable to a location proximate the spherical element. The indicator includes a contact ball for first contacting the selected standard item and holding it against the spherical element. The contact ball then contacts the tube when the tube is disposed about the spherical element. The indicator includes a dial having a rotatable needle for indicating the deviation of the tube wall thickness from the thickness of the selected standard item.

  16. System for measuring film thickness

    DOEpatents

    Batishko, Charles R.; Kirihara, Leslie J.; Peters, Timothy J.; Rasmussen, Donald E.

    1990-01-01

    A system for determining the thicknesses of thin films of materials exhibiting fluorescence in response to exposure to excitation energy from a suitable source of such energy. A section of film is illuminated with a fixed level of excitation energy from a source such as an argon ion laser emitting blue-green light. The amount of fluorescent light produced by the film over a limited area within the section so illuminated is then measured using a detector such as a photomultiplier tube. Since the amount of fluorescent light produced is a function of the thicknesses of thin films, the thickness of a specific film can be determined by comparing the intensity of fluorescent light produced by this film with the intensity of light produced by similar films of known thicknesses in response to the same amount of excitation energy. The preferred embodiment of the invention uses fiber optic probes in measuring the thicknesses of oil films on the operational components of machinery which are ordinarily obscured from view.

  17. Thicknesses of Mare Basalts from Gravity and Topograhy

    NASA Astrophysics Data System (ADS)

    GONG, S.; Wieczorek, M.; Nimmo, F.; Kiefer, W.; Head, J.; Smith, D.; Zuber, M.

    2015-10-01

    Mare basalts are derived from partial melting of the lunar interior and are mostly located on the near side of the Moon [1, 2]. Their iron-rich composition gives rise to their dark color, but also causes their density to be substantially higher than normal crustal rocks. The total volume of mare basalts can provide crucial information about the Moon's thermal evolution and volcanic activity. Unfortunately, the thicknesses of the mare are only poorly constrained. Here we use gravity data from NASA's GRAIL mission to investigate the thickness of mare basalts.

  18. Sub-10 nm nanopantography

    SciTech Connect

    Tian, Siyuan Donnelly, Vincent M. E-mail: economou@uh.edu; Economou, Demetre J. E-mail: economou@uh.edu; Ruchhoeft, Paul

    2015-11-09

    Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses, fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.

  19. CMOS downsizing toward sub-10 nm

    NASA Astrophysics Data System (ADS)

    Iwai, Hiroshi

    2004-04-01

    Recently, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 6 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing such small-geometry MOSFETs into large scale integrated circuits, and it is still questionable whether we can successfully introduce sub-10 nm CMOS LSIs into the market or not. In this paper, limitation and its possible causes for the downscaling of CMOS towards sub-10 nm are discussed with consideration of past CMOS predictions for the limitation.

  20. Fabrication of 10nm diameter carbon nanopores

    SciTech Connect

    Radenovic, Aleksandra; Trepagnier, Eliane; Csencsits, Roseann; Downing, Kenneth H; Liphardt, Jan

    2008-09-25

    The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.

  1. Laser Damage Growth in Fused Silica with Simultaneous 351 nm and 1053 nm irradiation

    SciTech Connect

    Norton, M A; Carr, A V; Carr, C W; Donohue, E E; Feit, M D; Hollingsworth, W G; Liao, Z; Negres, R A; Rubenchik, A M; Wegner, P J

    2008-10-24

    Laser-induced growth of optical damage often determines the useful lifetime of an optic in a high power laser system. We have extended our previous work on growth of laser damage in fused silica with simultaneous 351 nm and 1053 nm laser irradiation by measuring the threshold for growth with various ratios of 351 nm and 1053 nm fluence. Previously we reported that when growth occurs, the growth rate is determined by the total fluence. We now find that the threshold for growth is dependent on both the magnitude of the 351 nm fluence as well as the ratio of the 351 nm fluence to the 1053 nm fluence. Furthermore, the data suggests that under certain conditions the 1053 nm fluence does not contribute to the growth.

  2. Ionospheric slab thickness and its seasonal variations observed by GPS

    NASA Astrophysics Data System (ADS)

    Jin, Shuanggen; Cho, Jung-Ho; Park, Jung-Uk

    2007-11-01

    The ionospheric slab thickness, the ratio of the total electron content (TEC) to the F2-layer peak electron density (NmF2), is closely related to the shape of the ionospheric electron density profile Ne (h) and the TEC. Therefore, the ionospheric slab thickness is a significant parameter representative of the ionosphere. In this paper, the continuous GPS observations in South Korea are firstly used to study the equivalent slab thickness (EST) and its seasonal variability. The averaged diurnal medians of December January February (DJF), March April May (MAM), June July August (JJA) and September October November (SON) in 2003 have been considered to represent the winter, spring, summer and autumn seasons, respectively. The results show that the systematic diurnal changes of TEC, NmF2 and EST significantly appeared in each season and the higher values of TEC and NmF2 are observed during the equinoxes (semiannual anomaly) as well as in the mid-daytime of each season. The EST is significantly smaller in winter than in summer, but with a consistent variation pattern. During 14 16 LT in daytime, the larger EST values are observed in spring and autumn, while the smaller ones are in summer and winter. The peaks of EST diurnal variation are around 10 18 LT which are probably caused by the action of the thermospheric wind and the plasmapheric flow into the F2-region.

  3. Fermion localization on thick branes

    SciTech Connect

    Melfo, Alejandra; Pantoja, Nelson; Tempo, Jose David

    2006-02-15

    We consider chiral fermion confinement in scalar thick branes, which are known to localize gravity, coupled through a Yukawa term. The conditions for the confinement and their behavior in the thin-wall limit are found for various different BPS branes, including double walls and branes interpolating between different AdS{sub 5} spacetimes. We show that only one massless chiral mode is localized in all these walls, whenever the wall thickness is keep finite. We also show that, independently of wall's thickness, chiral fermionic modes cannot be localized in dS{sub 4} walls embedded in a M{sub 5} spacetime. Finally, massive fermions in double wall spacetimes are also investigated. We find that, besides the massless chiral mode localization, these double walls support quasilocalized massive modes of both chiralities.

  4. LTCC Thick Film Process Characterization

    DOE PAGESBeta

    Girardi, M. A.; Peterson, K. A.; Vianco, P. T.

    2016-05-01

    Low temperature cofired ceramic (LTCC) technology has proven itself in military/space electronics, wireless communication, microsystems, medical and automotive electronics, and sensors. The use of LTCC for high frequency applications is appealing due to its low losses, design flexibility and packaging and integration capability. Moreover, we summarize the LTCC thick film process including some unconventional process steps such as feature machining in the unfired state and thin film definition of outer layer conductors. The LTCC thick film process was characterized to optimize process yields by focusing on these factors: 1) Print location, 2) Print thickness, 3) Drying of tapes and panels,more » 4) Shrinkage upon firing, and 5) Via topography. Statistical methods were used to analyze critical process and product characteristics in the determination towards that optimization goal.« less

  5. Applications of film thickness equations

    NASA Technical Reports Server (NTRS)

    Hamrock, B. J.; Dowson, D.

    1983-01-01

    A number of applications of elastohydrodynamic film thickness expressions were considered. The motion of a steel ball over steel surfaces presenting varying degrees of conformity was examined. The equation for minimum film thickness in elliptical conjunctions under elastohydrodynamic conditions was applied to roller and ball bearings. An involute gear was also introduced, it was again found that the elliptical conjunction expression yielded a conservative estimate of the minimum film thickness. Continuously variable-speed drives like the Perbury gear, which present truly elliptical elastohydrodynamic conjunctions, are favored increasingly in mobile and static machinery. A representative elastohydrodynamic condition for this class of machinery is considered for power transmission equipment. The possibility of elastohydrodynamic films of water or oil forming between locomotive wheels and rails is examined. The important subject of traction on the railways is attracting considerable attention in various countries at the present time. The final example of a synovial joint introduced the equation developed for isoviscous-elastic regimes of lubrication.

  6. Noninvasive thickness measurements of metal films through microwave dielectric resonators

    NASA Astrophysics Data System (ADS)

    Jung, Ho Sang; Lee, Jae Hun; Han, Hyun Kyung; Lee, Sang Young

    2016-05-01

    Thicknesses of Pt films ranging from 60 to 950 nm are measured noninvasively using a TE 011-mode dielectric resonator with the resonant frequency of 8.5 - 9.8 GHz at temperatures of 77 K and 293 K. A cylindrical rutile rod is used as the dielectric, with a high- T C superconductive YBa2Cu3O7- δ film used as the bottom endplate of the resonator for measurements at 77 K. This method is based on two facts: i) Due to the electromagnetic interferences of incoming and reflected waves at the surface of the metal film surface, the effective surface resistance varies with the film thickness, and ii) the intrinsic surface resistance of normal metals is equal to the intrinsic surface reactance in the local limit. The measured thicknesses using the rutile resonator appear to be comparable with those obtained using a profilometer. [Figure not available: see fulltext.

  7. Simultaneous orientation and thickness mapping in transmission electron microscopy

    DOE PAGESBeta

    Tyutyunnikov, Dmitry; Özdöl, V. Burak; Koch, Christoph T.

    2014-12-04

    In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 nm technology transistor structures. The performance and limitations of our method are discussed and comparedmore » to those of other techniques available.« less

  8. Giant moving vortex mass in thick magnetic nanodots

    PubMed Central

    Guslienko, K. Y.; Kakazei, G. N.; Ding, J.; Liu, X. M.; Adeyeye, A. O.

    2015-01-01

    Magnetic vortex is one of the simplest topologically non-trivial textures in condensed matter physics. It is the ground state of submicron magnetic elements (dots) of different shapes: cylindrical, square etc. So far, the vast majority of the vortex dynamics studies were focused on thin dots with thickness 5–50 nm and only uniform across the thickness vortex excitation modes were observed. Here we explore the fundamental vortex mode in relatively thick (50–100 nm) dots using broadband ferromagnetic resonance and show that dimensionality increase leads to qualitatively new excitation spectra. We demonstrate that the fundamental mode frequency cannot be explained without introducing a giant vortex mass, which is a result of the vortex distortion due to interaction with spin waves. The vortex mass depends on the system geometry and is non-local because of important role of the dipolar interaction. The mass is rather small for thin dots. However, its importance increases drastically with the dot thickness increasing. PMID:26355430

  9. Giant moving vortex mass in thick magnetic nanodots

    NASA Astrophysics Data System (ADS)

    Guslienko, K. Y.; Kakazei, G. N.; Ding, J.; Liu, X. M.; Adeyeye, A. O.

    2015-09-01

    Magnetic vortex is one of the simplest topologically non-trivial textures in condensed matter physics. It is the ground state of submicron magnetic elements (dots) of different shapes: cylindrical, square etc. So far, the vast majority of the vortex dynamics studies were focused on thin dots with thickness 5-50 nm and only uniform across the thickness vortex excitation modes were observed. Here we explore the fundamental vortex mode in relatively thick (50-100 nm) dots using broadband ferromagnetic resonance and show that dimensionality increase leads to qualitatively new excitation spectra. We demonstrate that the fundamental mode frequency cannot be explained without introducing a giant vortex mass, which is a result of the vortex distortion due to interaction with spin waves. The vortex mass depends on the system geometry and is non-local because of important role of the dipolar interaction. The mass is rather small for thin dots. However, its importance increases drastically with the dot thickness increasing.

  10. Photoelectron Emission Studies in CsBr at 257 nm

    SciTech Connect

    Maldonado, Juan R.; Liu, Zhi; Sun, Yun; Pianetta, Piero A.; Pease, Fabian W.; /Stanford U., Elect. Eng. Dept. /SLAC, SSRL

    2006-09-28

    CsBr/Cr photocathodes were found [1,2] to meet the requirements of a multi-electron beam lithography system operating with a light energy of 4.8 eV (257nm). The fact that photoemission was observed with a light energy below the reported 7.3 eV band gap for CsBr was not understood. This paper presents experimental results on the presence of intra-band gap absorption sites (IBAS) in CsBr thin film photo electron emitters, and presents a model based on IBAS to explain the observed photoelectron emission behavior at energies below band gap. A fluorescence band centered at 330 nm with a FWHM of about 0.34 eV was observed in CsBr/Cr samples under 257 nm laser illumination which can be attributed to IBAS and agrees well with previously obtained synchrotron photoelectron spectra[1] from the valence band of CsBr films.

  11. 1064 nm SERS of NIR active hollow gold nanotags.

    PubMed

    Kearns, H; Shand, N C; Smith, W E; Faulds, K; Graham, D

    2015-01-21

    Surface enhanced Raman scattering (SERS) tags are in situ probes that can provide sensitive and selective probes for optical analysis in biological materials. Engineering tags for use in the near infrared (NIR) region is of particular interest since there is an uncongested spectral window for optical analysis due to the low background absorption and scattering from many molecules. An improved synthesis has resulted in the formation of hollow gold nanoshells (HGNs) with a localised surface plasmon resonance (LSPR) between 800 and 900 nm which provide effective SERS when excited at 1064 nm. Seven Raman reporters containing aromatic amine or thiol attachment groups were investigated. All were effective but 1,2-bis(4-pyridyl)ethylene (BPE) and 4,4-azopyridine (AZPY) provided the largest enhancement. At approximately monolayer coverage, these two reporters appear to pack with the main axis of the molecule perpendicular or nearly perpendicular to the surface giving strong SERS and thus providing effective 1064 nm gold SERS nanotags. PMID:25475892

  12. 308nm excimer laser in dermatology.

    PubMed

    Mehraban, Shadi; Feily, Amir

    2014-01-01

    308nm xenon-chloride excimer laser, a novel mode of phototherapy, is an ultraviolet B radiation system consisting of a noble gas and halide. The aim of this systematic review was to investigate the literature and summarize all the experiments, clinical trials and case reports on 308-nm excimer laser in dermatological disorders. 308-nm excimer laser has currently a verified efficacy in treating skin conditions such as vitiligo, psoriasis, atopic dermatitis, alopecia areata, allergic rhinitis, folliculitis, granuloma annulare, lichen planus, mycosis fungoides, palmoplantar pustulosis, pityriasis alba, CD30+ lympho proliferative disorder, leukoderma, prurigo nodularis, localized scleroderma and genital lichen sclerosus. Although the 308-nm excimer laser appears to act as a promising treatment modality in dermatology, further large-scale studies should be undertaken in order to fully affirm its safety profile considering the potential risk, however minimal, of malignancy, it may impose. PMID:25606333

  13. Model-based cartilage thickness measurement in the submillimeter range

    SciTech Connect

    Streekstra, G. J.; Strackee, S. D.; Maas, M.; Wee, R. ter; Venema, H. W.

    2007-09-15

    Current methods of image-based thickness measurement in thin sheet structures utilize second derivative zero crossings to locate the layer boundaries. It is generally acknowledged that the nonzero width of the point spread function (PSF) limits the accuracy of this measurement procedure. We propose a model-based method that strongly reduces PSF-induced bias by incorporating the PSF into the thickness estimation method. We estimated the bias in thickness measurements in simulated thin sheet images as obtained from second derivative zero crossings. To gain insight into the range of sheet thickness where our method is expected to yield improved results, sheet thickness was varied between 0.15 and 1.2 mm with an assumed PSF as present in the high-resolution modes of current computed tomography (CT) scanners [full width at half maximum (FWHM) 0.5-0.8 mm]. Our model-based method was evaluated in practice by measuring layer thickness from CT images of a phantom mimicking two parallel cartilage layers in an arthrography procedure. CT arthrography images of cadaver wrists were also evaluated, and thickness estimates were compared to those obtained from high-resolution anatomical sections that served as a reference. The thickness estimates from the simulated images reveal that the method based on second derivative zero crossings shows considerable bias for layers in the submillimeter range. This bias is negligible for sheet thickness larger than 1 mm, where the size of the sheet is more than twice the FWHM of the PSF but can be as large as 0.2 mm for a 0.5 mm sheet. The results of the phantom experiments show that the bias is effectively reduced by our method. The deviations from the true thickness, due to random fluctuations induced by quantum noise in the CT images, are of the order of 3% for a standard wrist imaging protocol. In the wrist the submillimeter thickness estimates from the CT arthrography images correspond within 10% to those estimated from the anatomical

  14. Characterization and optimization of residual layer thickness during UV imprint process for singlemode waveguide fabrication

    NASA Astrophysics Data System (ADS)

    An, Shinmo; Lee, Hyun-Shik; Park, Se-Guen; O, Beom-Hoan; Lee, Seung-Gol; Lee, El-Hang

    2009-02-01

    We report on the fabrication and characterization of a residual layer resulting from UV imprinting of singlemode optical waveguide. We have measured the residual thickness formed from the imprinting process for several-um-size singlemode waveguide fabrication using the parameters of the imprinting pressure, dropped volume, and viscosity of the used polymer. We found that the residual layer thickness is dependent on both the initial polymer volume and process pressure and the initial polymer volume is more critical than process pressure. Viscosity of polymer also affects the residual layer thickness, the lowest residual layer thickness of 29nm is achieved with nano-imprinting resin, 0.3uL volume, and imprint pressure more than 20bar. Even with optical resin, the residual layer thickness of 60nm is achieved with 0.3uL volume and imprinting pressure of 30bar.

  15. Optical extension at the 193-nm wavelength

    NASA Astrophysics Data System (ADS)

    Zandbergen, Peter; McCallum, Martin; Amblard, Gilles R.; Domke, Wolf-Dieter; Smith, Bruce W.; Zavyalova, Lena; Petersen, John S.

    1999-07-01

    Lithography at 193nm is the first optical lithography technique that will be introduced for manufacturing of technology levels. where the required dimensions are smaller than the actual wavelength. This paper explores several techniques to extend 193nm to low k1 lithography. Most attention is given to binary mask solution in at 130nm dimensions, where k1 is 0.4. Various strong and Gaussian quadrupole illuminators were designed, manufactured and tested for this application. Strong quadrupoles show that largest DOF improvements. The drawback however, is that these strong quadrupoles are very duty cycle and dimensions specific, resulting in large proximity biases between different duty cycles. Due to their design, Gaussian quadrupoles sample much wider frequency ranges, resulting in less duty cycles specific DOF improvements and less proximity basis. At sub-130nm dimensions, strong phase shift masks provide significant latitude improvements, when compared to binary masks with quadrupole illumination. However, differences in dose to size for different duty cycles were up to 25 percent. For definition of contact holes, linewidth biasing through silylation, a key feature of the CARL bi-layer resist approach, demonstrated significant DOF latitude improvements compared to SLR at 140nm and 160nm contact holes.

  16. External-cavity diamond Raman laser performance at 1240 nm and 1485 nm wavelengths with high pulse energy

    NASA Astrophysics Data System (ADS)

    Pashinin, V. P.; Ralchenko, V. G.; Bolshakov, A. P.; Ashkinazi, E. E.; Gorbashova, M. A.; Yurov, V. Yu; Konov, V. I.

    2016-06-01

    We report on an external-cavity diamond Raman laser (DRL) pumped with a Q-switched Nd:YAG and generating at 1st and 2nd Stokes (1240 nm and 1485 nm) with enhanced output energy. The slope efficiency of 54% and output energy as high as 1.2 mJ in single pulse at 1240 nm have been achieved with optimized cavity, while the pulse energy of 0.70 mJ was obtained in the eye-safe spectral region at 1485 nm. Calculations of thermal lensing effect indicate it as a possible reason for the observed decrease in conversion efficiency at the highest pump energies.

  17. Dehalogenimonas spp. can Reductively Dehalogenate High Concentrations of 1,2-Dichloroethane, 1,2-Dichloropropane, and 1,1,2-Trichloroethane

    PubMed Central

    2012-01-01

    The contaminant concentrations over which type strains of the species Dehalogenimonas alkenigignens and Dehalogenimonas lykanthroporepellens were able to reductively dechlorinate 1,2-dichloroethane (1,2-DCA), 1,2-dichloropropane (1,2-DCP), and 1,1,2-trichloroethane (1,1,2-TCA) were evaluated. Although initially isolated from an environment with much lower halogenated solvent concentrations, D. alkenigignens IP3-3T was found to reductively dehalogenate chlorinated alkanes at concentrations comparable to D. lykanthroporepellens BL-DC-9T. Both species dechlorinated 1,2-DCA, 1,2-DCP, and 1,1,2-TCA present at initial concentrations at least as high as 8.7, 4.0, and 3.5 mM, respectively. The ability of Dehalogenimonas spp. to carry out anaerobic reductive dechlorination even in the presence of high concentrations of chlorinated aliphatic alkanes has important implications for remediation of contaminated soil and groundwater. PMID:23046725

  18. Dehalogenimonas spp. can Reductively Dehalogenate High Concentrations of 1,2-Dichloroethane, 1,2-Dichloropropane, and 1,1,2-Trichloroethane.

    PubMed

    Maness, Andrew D; Bowman, Kimberly S; Yan, Jun; Rainey, Fred A; Moe, William M

    2012-01-01

    The contaminant concentrations over which type strains of the species Dehalogenimonas alkenigignens and Dehalogenimonas lykanthroporepellens were able to reductively dechlorinate 1,2-dichloroethane (1,2-DCA), 1,2-dichloropropane (1,2-DCP), and 1,1,2-trichloroethane (1,1,2-TCA) were evaluated. Although initially isolated from an environment with much lower halogenated solvent concentrations, D. alkenigignens IP3-3T was found to reductively dehalogenate chlorinated alkanes at concentrations comparable to D. lykanthroporepellens BL-DC-9T. Both species dechlorinated 1,2-DCA, 1,2-DCP, and 1,1,2-TCA present at initial concentrations at least as high as 8.7, 4.0, and 3.5 mM, respectively. The ability of Dehalogenimonas spp. to carry out anaerobic reductive dechlorination even in the presence of high concentrations of chlorinated aliphatic alkanes has important implications for remediation of contaminated soil and groundwater. PMID:23046725

  19. The Double-ended 750 nm and 532 nm Laser Output from PPLN-FWM

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Li, Yu-Xiang; Yao, Jian-Quan; Guo, Ling; Wang, Zhuo; Han, Sha-Sha; Zhang, Cui-Ying; Zhong, Kai

    2013-06-01

    We investigate 750 nm and 532 nm dual-wavelength laser for applications in the internet of things. A kind of optical maser is developed, in which the semiconductor module outputs the 808 nm pump light and then it goes into a double-clad Nd3+ :YAG monocrystal optical fiber through the intermediate coupler and forms a 1064 nm laser. The laser outputs come from both left and right terminals. In the right branch, the laser goes into the right cycle polarization LinNbO3 (PPLN) crystal through the right coupler, produces the optical parametric oscillation and forms the signal light λ1 (1500 nm), the idle frequency light λ2 (3660.55 nm), and the second-harmonic of the signal light λ3 (750 nm). These three kinds of light and the pump light λ4 together form the frequency matching and the quasi-phase matching, then the four-wave mixing occurs to create the high-gain light at wavelength 750 nm. Meanwhile, in the left branch, the laser goes into the left PPLN crystal through the left coupler, engenders frequency doubling and forms the light at wavelength 532 nm. That is to say, the optical maser provides 750 nm and 532 nm dual-wavelength laser outputting from two terminals, which is workable.

  20. Eddy current thickness measurement apparatus

    DOEpatents

    Rosen, Gary J.; Sinclair, Frank; Soskov, Alexander; Buff, James S.

    2015-06-16

    A sheet of a material is disposed in a melt of the material. The sheet is formed using a cooling plate in one instance. An exciting coil and sensing coil are positioned downstream of the cooling plate. The exciting coil and sensing coil use eddy currents to determine a thickness of the solid sheet on top of the melt.

  1. Absolute thickness metrology with submicrometer accuracy using a low-coherence distance measuring interferometer.

    PubMed

    Zhao, Yang; Schmidt, Greg; Moore, Duncan T; Ellis, Jonathan D

    2015-09-01

    Absolute physical thickness across the sample aperture is critical in determining the index of a refraction profile from the optical path length profile for gradient index (GRIN) materials, which have a designed inhomogeneous refractive index. Motivated by this application, instrumentation was established to measure the absolute thickness of samples with nominally plane-parallel surfaces up to 50 mm thick. The current system is capable of measuring absolute thickness with 120 nm (1σ) repeatability and submicrometer expanded measurement uncertainty. Beside GRIN materials, this method is also capable of measuring other inhomogeneous and opaque materials. PMID:26368894

  2. Thickness and temperature dependence of stress relaxation in nanoscale aluminum films

    NASA Astrophysics Data System (ADS)

    Hyun, S.; Brown, W. L.; Vinci, R. P.

    2003-11-01

    We have found that stress relaxation of nanoscale Al thin films is strongly dependent on both film thickness and temperature. Films 33, 107, and 205 nm thick prepared by evaporation onto a silicon nitride membrane substrate were studied using membrane resonance. A single thermal cycle to 300 °C was used to establish a stress, after which the time dependence of the stress was measured for the three film thicknesses at 50, 75, and 100 °C. The relaxation rate is highest for the highest temperature and the thinnest film. A dislocation locking mechanism is suggested as a possible explanation for the observed thickness dependence.

  3. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    NASA Astrophysics Data System (ADS)

    Wan, Yimao; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-01

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiNx) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiNx stack, recombination current density J0 values of 9, 11, 47, and 87 fA/cm2 are obtained on 10 Ω.cm n-type, 0.8 Ω.cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J0 on n-type 10 Ω.cm wafers is further reduced to 2.5 ± 0.5 fA/cm2 when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiNx stack is thermally stable at 400 °C in N2 for 60 min on all four c-Si surfaces. Capacitance-voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiNx stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  4. Thick resist for MEMS processing

    NASA Astrophysics Data System (ADS)

    Brown, Joe; Hamel, Clifford

    2001-11-01

    The need for technical innovation is always present in today's economy. Microfabrication methods have evolved in support of the demand for smaller and faster integrated circuits with price performance improvements always in the scope of the manufacturing design engineer. The dispersion of processing technology spans well beyond IC fabrication today with batch fabrication and wafer scale processing lending advantages to MEMES applications from biotechnology to consumer electronics from oil exploration to aerospace. Today the demand for innovative processing techniques that enable technology is apparent where only a few years ago appeared too costly or not reliable. In high volume applications where yield and cost improvements are measured in fractions of a percent it is imperative to have process technologies that produce consistent results. Only a few years ago thick resist coatings were limited to thickness less than 20 microns. Factors such as uniformity, edge bead and multiple coatings made high volume production impossible. New developments in photoresist formulation combined with advanced coating equipment techniques that closely controls process parameters have enable thick photoresist coatings of 70 microns with acceptable uniformity and edge bead in one pass. Packaging of microelectronic and micromechanical devices is often a significant cost factor and a reliability issue for high volume low cost production. Technologies such as flip- chip assembly provide a solution for cost and reliability improvements over wire bond techniques. The processing for such technology demands dimensional control and presents a significant cost savings if it were compatible with mainstream technologies. Thick photoresist layers, with good sidewall control would allow wafer-bumping technologies to penetrate the barriers to yield and production where costs for technology are the overriding issue. Single pass processing is paramount to the manufacturability of packaging

  5. MAPPING THE ASYMMETRIC THICK DISK. II. DISTANCE, SIZE, AND MASS OF THE HERCULES THICK DISK CLOUD

    SciTech Connect

    Larsen, Jeffrey A.; Cabanela, Juan E.; Humphreys, Roberta M. E-mail: cabanela@mnstate.edu

    2011-04-15

    The Hercules Thick Disk Cloud was initially discovered as an excess in the number of faint blue stars between Quadrants 1 and 4 of the Galaxy. The origin of the Cloud could be an interaction with the disk bar, a triaxial Thick Disk, or a merger remnant or stream. To better map the spatial extent of the Cloud along the line of sight, we have obtained multi-color UBVR photometry for 1.2 million stars in 63 fields each of approximately 1 deg{sup 2}. Our analysis of the fields beyond the apparent boundaries of the excess has already ruled out a triaxial Thick Disk as a likely explanation. In this paper, we present our results for the star counts over all of our fields, determine the spatial extent of the overdensity across and along the line of sight, and estimate the size and mass of the Cloud. Using photometric parallaxes, the stars responsible for the excess are between 1 and 6 kpc from the Sun, 0.5-4 kpc above the Galactic plane, and extend approximately 3-4 kpc across our line of sight. The Cloud is thus a major substructure in the Galaxy. The distribution of the excess along our sight lines corresponds with the density contours of the bar in the Disk, and its most distant stars are directly over the bar. We also see through the Cloud to its far side. Over the entire 500 deg{sup 2} of the sky containing the Cloud, we estimate more than 5.6 million stars and 1.9 million solar masses of material. If the overdensity is associated with the bar, it would exceed 1.4 billion stars and more than 50 million solar masses. Finally, we argue that the Hercules-Aquila Cloud is actually the Hercules Thick Disk Cloud.

  6. Substrate interactions in dehalogenation of 1,2-dichloroethane, 1,2-dichloropropane, and 1,1,2-trichloroethane mixtures by Dehalogenimonas spp.

    PubMed

    Dillehay, Jacob L; Bowman, Kimberly S; Yan, Jun; Rainey, Fred A; Moe, William M

    2014-04-01

    When chlorinated alkanes are present as soil or groundwater pollutants, they often occur in mixtures. This study evaluated substrate interactions during the anaerobic reductive dehalogenation of chlorinated alkanes by the type strains of two Dehalogenimonas species, D. lykanthroporepellens and D. alkenigignens. Four contaminant mixtures comprised of combinations of the chlorinated solvents 1,2-dichloroethane (1,2-DCA), 1,2-dichloropropane (1,2-DCP), and 1,1,2-trichloroethane (1,1,2-TCA) were assessed for each species. Chlorinated solvent depletion and daughter product formation determined as a function of time following inoculation into anaerobic media revealed preferential dechlorination of 1,1,2-TCA over both 1,2-DCA and 1,2-DCP for both species. 1,2-DCA in particular was not dechlorinated until 1,1,2-TCA reached low concentrations. In contrast, both species concurrently dechlorinated 1,2-DCA and 1,2-DCP over a comparably large concentration range. This is the first report of substrate interactions during chlorinated alkane dehalogenation by pure cultures, and the results provide insights into the chlorinated alkane transformation processes that may be expected for contaminant mixtures in environments where Dehalogenimonas spp. are present. PMID:23990262

  7. Effects of Sample Thickness on the Optical Properties of Surface Plasmon-Coupled Emission

    PubMed Central

    Gryczynski, Ignacy; Malicka, Joanna; Nowaczyk, Kazimierz; Gryczynski, Zygmunt; Lakowicz, Joseph R.

    2016-01-01

    In recent reports, we demonstrated coupling of excited fluorophores with thin silver or gold films resulting in directional surface plasmon-coupled emission (SPCE) through the silver film and into the glass substrate. In the present report, we describe the spectral and spatial properties of SPCE from sulforhomamine 101 in polyvinyl alcohol (PVA) films of various thicknesses on 50-nm silver films. The PVA thickness varied from about 30 to 750 nm. In thin PVA films with a thickness less than 160 nm, SPCE occurred at a single angle in the glass substrate and displayed only p polarization. As the PVA thickness increased to 300 nm, we observed SPCE at two angles, with different s or p polarization for each angle. For PVA films from 500 to 750 nm thick, we observed SPCE at three or four angles, with alternating s and p polarizations. The multiple rings of SPCE and the unusual s-polarized emission are consistent with the expected waveguide modes in the silver–PVA composite film. However, in contrast to our expectations, the average lifetimes of SPCE were not substantially changed from the PVA films. The observation of SPCE at multiple angles and with different polarization opens new opportunities for the use of SPCE to study anisotropic systems or to develop unique sensing devices. PMID:27340372

  8. Coal thickness guage using RRAS techniques, parts 2 and 3

    NASA Technical Reports Server (NTRS)

    King, J. D.; Rollwitz, W. L.

    1980-01-01

    Electron magnetic resonance was investigated as a sensing technique for use in measuring the thickness of the layer of coal overlying the rock substrate. The goal is development of a thickness gauge which will be usable for control of mining machinery to maintain the coal thickness within selected bounds. A sensor must be noncontracting, have a measurement range of 6 inches or more, and an accuracy of 1/2 inch or better. The sensor should be insensitive to variations in spacing between the sensor and the surface, the response speed should be adequate to permit use on continuous mining equipment, and the device should be rugged and otherwise suited for operation under conditions of high vibration, moisture, and dust. Finally, the sensor measurement must not be adversely affected by the natural effects occurring in coal such as impurities, voids, cracks, layering, high moisture level, and other conditions that are likely to be encountered.

  9. Chromosomes without a 30-nm chromatin fiber

    PubMed Central

    Joti, Yasumasa; Hikima, Takaaki; Nishino, Yoshinori; Kamada, Fukumi; Hihara, Saera; Takata, Hideaki; Ishikawa, Tetsuya; Maeshima, Kazuhiro

    2012-01-01

    How is a long strand of genomic DNA packaged into a mitotic chromosome or nucleus? The nucleosome fiber (beads-on-a-string), in which DNA is wrapped around core histones, has long been assumed to be folded into a 30-nm chromatin fiber, and a further helically folded larger fiber. However, when frozen hydrated human mitotic cells were observed using cryoelectron microscopy, no higher-order structures that included 30-nm chromatin fibers were found. To investigate the bulk structure of mitotic chromosomes further, we performed small-angle X-ray scattering (SAXS), which can detect periodic structures in noncrystalline materials in solution. The results were striking: no structural feature larger than 11 nm was detected, even at a chromosome-diameter scale (~1 μm). We also found a similar scattering pattern in interphase nuclei of HeLa cells in the range up to ~275 nm. Our findings suggest a common structural feature in interphase and mitotic chromatins: compact and irregular folding of nucleosome fibers occurs without a 30-nm chromatin structure. PMID:22825571

  10. 810nm, 980nm, 1470nm and 1950nm diode laser comparison: a preliminary "ex vivo" study on oral soft tissues

    NASA Astrophysics Data System (ADS)

    Fornaini, Carlo; Merigo, Elisabetta; Sozzi, Michele; Selleri, Stefano; Vescovi, Paolo; Cucinotta, Annamaria

    2015-02-01

    The introduction of diode lasers in dentistry has several advantages, mainly consisting on the reduced size, reduced cost and possibility to beam delivering by optical fibers. At the moment the two diode wavelengths normally utilized in the dental field are 810 and 980 nm for soft tissues treatments. The aim of this study was to compare the efficacy of four different diode wavelengths: 810, 980, 1470 and 1950 nm diode laser for the ablation of soft tissues. Several samples of veal tongue were exposed to the four different wavelengths, at different fluences. The internal temperature of the soft tissues, in the area close to the beam, was monitored with thermocouple during the experiment. The excision quality of the exposed samples have been characterized by means of an optical microscope. Tissue damages and the cut regularity have been evaluated on the base of established criteria. The lowest thermal increase was recorded for 1950 nm laser. Best quality and speed of incision were obtained by the same wavelength. By evaluating epithelial, stromal and vascular damages for all the used wavelengths, the best result, in terms of "tissue respect", have been obtained for 1470 and 1950 nm exposures. From the obtained results 1470 and 1950 nm diode laser showed to be the best performer wavelengths among these used in this "ex vivo" study, probably due to their greatest affinity to water.

  11. Radiation Failures in Intel 14nm Microprocessors

    NASA Technical Reports Server (NTRS)

    Bossev, Dobrin P.; Duncan, Adam R.; Gadlage, Matthew J.; Roach, Austin H.; Kay, Matthew J.; Szabo, Carl; Berger, Tammy J.; York, Darin A.; Williams, Aaron; LaBel, K.; Ingalls, James D.

    2016-01-01

    In this study the 14 nm Intel Broadwell 5th generation core series 5005U-i3 and 5200U-i5 was mounted on Dell Inspiron laptops, MSI Cubi and Gigabyte Brix barebones and tested with Windows 8 and CentOS7 at idle. Heavy-ion-induced hard- and catastrophic failures do not appear to be related to the Intel 14nm Tri-Gate FinFET process. They originate from a small (9 m 140 m) area on the 32nm planar PCH die (not the CPU) as initially speculated. The hard failures seem to be due to a SEE but the exact physical mechanism has yet to be identified. Some possibilities include latch-ups, charge ion trapping or implantation, ion channels, or a combination of those (in biased conditions). The mechanism of the catastrophic failures seems related to the presence of electric power (1.05V core voltage). The 1064 nm laser mimics ionization radiation and induces soft- and hard failures as a direct result of electron-hole pair production, not heat. The 14nm FinFET processes continue to look promising for space radiation environments.

  12. Influence of electron transport layer thickness on optical properties of organic light-emitting diodes

    SciTech Connect

    Liu, Guohong; Liu, Yong; Li, Baojun; Zhou, Xiang

    2015-06-07

    We investigate experimentally and theoretically the influence of electron transport layer (ETL) thickness on properties of typical N,N′-diphenyl-N,N′-bis(1-naphthyl)-[1,1′-biphthyl]-4,4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) heterojunction based organic light-emitting diodes (OLEDs), where the thickness of ETL is varied to adjust the distance between the emitting zone and the metal electrode. The devices showed a maximum current efficiency of 3.8 cd/A when the ETL thickness is around 50 nm corresponding to an emitter-cathode distance of 80 nm, and a second maximum current efficiency of 2.6 cd/A when the ETL thickness is around 210 nm corresponding to an emitter-cathode distance of 240 nm. We adopt a rigorous electromagnetic approach that takes parameters, such as dipole orientation, polarization, light emitting angle, exciton recombination zone, and diffusion length into account to model the optical properties of devices as a function of varying ETL thickness. Our simulation results are accurately consistent with the experimental results with a widely varying thickness of ETL, indicating that the theoretical model may be helpful to design high efficiency OLEDs.

  13. Generation and characterization of 1,2-diaryl-1,1,2,2-tetramethyldisilane cation radicals.

    PubMed

    Guirado, Gonzalo; Haze, Olesya; Dinnocenzo, Joseph P

    2010-05-21

    Nanosecond laser flash photolysis methods were used to generate and spectrally characterize the cation radicals of 1,2-diaryl-1,1,2,2,-tetramethyldisilanes (Ar = p-X-Ph, X = H, CH(3), OCH(3)) in hexafluoroisopropanol (HFIP) at room temperature. The disilane cation radicals rapidly reacted with methanol, with bimolecular rate constants ranging from 0.63 to 2.1 x 10(8) M(-1) s(-1). The cation radicals were found to react with tert-butanol 4-5 times more slowly than methanol, consistent with a small steric effect for nucleophile-assisted fragmentation of the Si-Si bond. The standard potentials for oxidation of the disilanes in HFIP were determined by two different methods: first, by measuring equilibrium constants for electron exchange between the disilanes and the cation radical of hexaethylbenzene and, second, by combining electrochemical data from cyclic voltammetry with the lifetimes of the disilane cation radicals measured by laser flash photolysis in the same media. Agreement between the two methods was excellent (1,2-di-p-methoxyphenyl-1,1,2,2,-tetramethyldisilane by slow scan cyclic voltammetry in acetonitrile was not found to be reversible, in contrast to prior literature reports. Possible explanations for the prior results are proposed. PMID:20405871

  14. An alternating GluN1-2-1-2 subunit arrangement in mature NMDA receptors.

    PubMed

    Riou, Morgane; Stroebel, David; Edwardson, J Michael; Paoletti, Pierre

    2012-01-01

    NMDA receptors (NMDARs) form glutamate-gated ion channels that play a critical role in CNS physiology and pathology. Together with AMPA and kainate receptors, NMDARs are known to operate as tetrameric complexes with four membrane-embedded subunits associating to form a single central ion-conducting pore. While AMPA and some kainate receptors can function as homomers, NMDARs are obligatory heteromers composed of homologous but distinct subunits, most usually of the GluN1 and GluN2 types. A fundamental structural feature of NMDARs, that of the subunit arrangement around the ion pore, is still controversial. Thus, in a typical NMDAR associating two GluN1 and two GluN2 subunits, there is evidence for both alternating 1/2/1/2 and non-alternating 1/1/2/2 arrangements. Here, using a combination of electrophysiological and cross-linking experiments, we provide evidence that functional GluN1/GluN2A receptors adopt the 1/2/1/2 arrangement in which like subunits are diagonal to one another. Moreover, based on the recent crystal structure of an AMPA receptor, we show that in the agonist-binding and pore regions, the GluN1 subunits occupy a "proximal" position, closer to the central axis of the channel pore than that of GluN2 subunits. Finally, results obtained with reducing agents that differ in their membrane permeability indicate that immature (intracellular) and functional (plasma-membrane inserted) pools of NMDARs can adopt different subunit arrangements, thus stressing the importance of discriminating between the two receptor pools in assembly studies. Elucidating the quaternary arrangement of NMDARs helps to define the interface between the subunits and to understand the mechanism and pharmacology of these key signaling receptors. PMID:22493736

  15. Diode laser (980nm) cartilage reshaping

    NASA Astrophysics Data System (ADS)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  16. Mask process monitoring with optical CD measurements for sub-50-nm

    NASA Astrophysics Data System (ADS)

    Bang, Kyung-Yoon; Park, Jin-Back; Roh, Jeong-Hun; Chung, Dong-Hoon; Cho, Sung-Yong; Kim, Yong-Hoon; Woo, Sang-Gyun; Cho, Han-Ku

    2008-10-01

    Process control of line width and etch depth on the photomask production is more important as the industry moves toward 50nm node and beyond. In this paper, we report the ellipsometer-based scatterometry based metrology system that provides line width and resist thickness measurements on sub 50 nm node test masks for a mask process monitoring. Measurements were made with spectroscopic rotating compensator ellipsometer system. For analysis we made up modeling libraries with a 200 nm half pitch and checked and applied them to ADI and ACI measurements of binary and phase shift mask (PSM). We characterized the CD uniformity, linearity, thickness uniformity. Results show that linearity measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more than 0.99. Resist thickness results show that depth bias is about 2nm between AFM and OCD in ADI step. The data show that optical CD measurements provide a nondestructive way to monitor mask processes with relatively little time loss from measurement step.

  17. Stability of Polymer Ultrathin Films (<7 nm) Made by a Top-Down Approach.

    PubMed

    Bal, Jayanta Kumar; Beuvier, Thomas; Unni, Aparna Beena; Chavez Panduro, Elvia Anabela; Vignaud, Guillaume; Delorme, Nicolas; Chebil, Mohamed Souheib; Grohens, Yves; Gibaud, Alain

    2015-08-25

    In polymer physics, the dewetting of spin-coated polystyrene ultrathin films on silicon remains mysterious. By adopting a simple top-down method based on good solvent rinsing, we are able to prepare flat polystyrene films with a controlled thickness ranging from 1.3 to 7.0 nm. Their stability was scrutinized after a classical annealing procedure above the glass transition temperature. Films were found to be stable on oxide-free silicon irrespective of film thickness, while they were unstable (<2.9 nm) and metastable (>2.9 nm) on 2 nm oxide-covered silicon substrates. The Lifshitz-van der Waals intermolecular theory that predicts the domains of stability as a function of the film thickness and of the substrate nature is now fully reconciled with our experimental observations. We surmise that this reconciliation is due to the good solvent rinsing procedure that removes the residual stress and/or the density variation of the polystyrene films inhibiting thermodynamically the dewetting on oxide-free silicon. PMID:26149069

  18. 157 nm F2-laser writing of silica optical waveguides in silicone rubber

    NASA Astrophysics Data System (ADS)

    Okoshi, Masayuki; Li, Jianzhao; Herman, Peter R.

    2005-10-01

    Silica (SiO2) optical waveguides have been fabricated on the surface of silicone [(SiO(CH3)2)n] rubber by photochemical modification of silicone rubber into silica with 157 nmF2-laser radiation. The 2 mm thick silicone was exposed through a thin (˜0.2 mm) air layer to generate oxygen radicals that chemically assisted in the silica transformation. Silica waveguides were defined in 8-16 µm wide exposure strips by a proximity Cr-on-CaF2 photomask. Optimum laser processing conditions are presented for generating crack-free waveguides with good optical transparency at red (635 nm) and infrared (1550 nm) wavelengths. A propagation loss of ˜6 dB/cm is reported at the 1550 nm wavelength.

  19. 157 nm F2-laser writing of silica optical waveguides in silicone rubber.

    PubMed

    Okoshi, Masayuki; Li, Jianzhao; Herman, Peter R

    2005-10-15

    Silica (SiO2) optical waveguides have been fabricated on the surface of silicone [(SiO(CH3)2)n] rubber by photochemical modification of silicone rubber into silica with 157 nm F2-laser radiation. The 2 mm thick silicone was exposed through a thin (approximately 0.2 mm) air layer to generate oxygen radicals that chemically assisted in the silica transformation. Silica waveguides were defined in 8-16 microm wide exposure strips by a proximity Cr-on-CaF2 photomask. Optimum laser processing conditions are presented for generating crack-free waveguides with good optical transparency at red (635 nm) and infrared (1550 nm) wavelengths. A propagation loss of approximately 6 dB/cm is reported at the 1550 nm wavelength. PMID:16252756

  20. Super ACO FEL oscillation at 300 nm

    NASA Astrophysics Data System (ADS)

    Nutarelli, D.; Garzella, D.; Renault, E.; Nahon, L.; Couprie, M. E.

    2000-05-01

    Some recent improvements, involving both the optical cavity mirrors and the positron beam dynamics in the storage ring, have allowed us to achieve a laser oscillation at 300 nm on the Super ACO Storage Ring FEL. The Super ACO storage ring is operated at 800 MeV which is the nominal energy for the usual synchrotron radiation users, and the highest energy for a storage ring FEL. The lasing at 300 nm could be kept during 2 h per injection, with a stored current ranging between 30 and 60 mA. The FEL characteristics are presented here. The longitudinal stability and the FEL optics behaviour are also discussed.

  1. 1550-nm wavelength-tunable HCG VCSELs

    NASA Astrophysics Data System (ADS)

    Chase, Christopher; Rao, Yi; Huang, Michael; Chang-Hasnain, Connie

    2014-02-01

    We demonstrate wavelength-tunable VCSELs using high contrast gratings (HCGs) as the top output mirror on VCSELs, operating at 1550 nm. Tunable HCG VCSELs with a ~25 nm mechanical tuning range as well as VCSELs with 2 mW output power were realized. Error-free operation of an optical link using directly-modulated tunable HCG VCSELs transmitting at 1.25 Gbps over 18 channels spaced by 100 GHz and transmitted over 20 km of single mode fiber is demonstrated, showing the suitability of the HCG tunable VCSEL as a low cost source for WDM communications systems.

  2. Comparative study of Nd:KGW lasers pumped at 808 nm and 877 nm

    NASA Astrophysics Data System (ADS)

    Huang, Ke; Ge, Wen-Qi; Zhao, Tian-Zhuo; He, Jian-Guo; Feng, Chen-Yong; Fan, Zhong-Wei

    2015-10-01

    The laser performance and thermal analysis of Nd:KGW laser continuously pumped by 808 nm and 877 nm are comparatively investigated. Output power of 670 mW and 1587 mW, with nearly TEM00 mode, are achieved respectively at 808 nm pump and 877 nm pump. Meanwhile, a high-power passively Q-switched Nd:KGW/Cr4+:YAG laser pumped at 877 nm is demonstrated. An average output power of 1495 mW is obtained at pump power of 5.22 W while the laser is operating at repetition of 53.17 kHz. We demonstrate that 877 nm diode laser is a more potential pump source for Nd:KGW lasers.

  3. 635nm diode laser biostimulation on cutaneous wounds

    NASA Astrophysics Data System (ADS)

    Solmaz, Hakan; Gülsoy, Murat; Ülgen, Yekta

    2014-05-01

    Biostimulation is still a controversial subject in wound healing studies. The effect of laser depends of not only laser parameters applied but also the physiological state of the target tissue. The aim of this project is to investigate the biostimulation effects of 635nm laser irradiation on the healing processes of cutaneous wounds by means of morphological and histological examinations. 3-4 months old male Wistar Albino rats weighing 330 to 350 gr were used throughout this study. Low-level laser therapy was applied through local irradiation of red light on open skin excision wounds of 5mm in diameter prepared via punch biopsy. Each animal had three identical wounds on their right dorsal part, at which two of them were irradiated with continuous diode laser of 635nm in wavelength, 30mW of power output and two different energy densities of 1 J/cm2 and 3 J/cm2. The third wound was kept as control group and had no irradiation. In order to find out the biostimulation consequences during each step of wound healing, which are inflammation, proliferation and remodeling, wound tissues removed at days 3, 7, 10 and 14 following the laser irradiation are morphologically examined and than prepared for histological examination. Fragments of skin including the margin and neighboring healthy tissue were embedded in paraffin and 6 to 9 um thick sections cut are stained with hematoxylin and eosin. Histological examinations show that 635nm laser irradiation accelerated the healing process of cutaneous wounds while considering the changes of tissue morphology, inflammatory reaction, proliferation of newly formed fibroblasts and formation and deposition of collagen fibers. The data obtained gives rise to examine the effects of two distinct power densities of low-level laser irradiation and compare both with the non-treatment groups at different stages of healing process.

  4. Preparation of thick molybdenum targets

    NASA Technical Reports Server (NTRS)

    Singh, J. J.

    1974-01-01

    Thick natural molybdenum deposits on nickel plated copper substrates were prepared by thermal decomposition of molybdenum hexacarbonyl vapors on a heated surface in an inert gas atmosphere. The molybdenum metal atoms are firmly bonded to the substrate atoms, thus providing an excellent thermal contact across the junction. Molybdenum targets thus prepared should be useful for internal bombardment in a cyclotron where thermal energy inputs can exceed 10 kW.

  5. Soliton models for thick branes

    NASA Astrophysics Data System (ADS)

    Peyravi, Marzieh; Riazi, Nematollah; Lobo, Francisco S. N.

    2016-05-01

    In this work, we present new soliton solutions for thick branes in 4+1 dimensions. In particular, we consider brane models based on the sine-Gordon (SG), φ 4 and φ 6 scalar fields, which have broken Z2 symmetry in some cases and are responsible for supporting and stabilizing the thick branes. The origin of the symmetry breaking in these models resides in the fact that the modified scalar field potential may have non-degenerate vacua. These vacua determine the cosmological constant on both sides of the brane. We also study the geodesic equations along the fifth dimension, in order to explore the particle motion in the neighborhood of the brane. Furthermore, we examine the stability of the thick branes, by determining the sign of the w^2 term in the expansion of the potential for the resulting Schrödinger-like equation, where w is the five-dimensional coordinate. It turns out that the φ ^4 brane is stable, while there are unstable modes for certain ranges of the model parameters in the SG and φ ^6 branes.

  6. Central Corneal Thickness in Children

    PubMed Central

    2011-01-01

    Objective To report the central corneal thickness (CCT) in healthy white, African-American, and Hispanic children from birth to 17 years of age. Design Prospective observational multicenter study. Central corneal thickness was measured with a hand-held contact pachymeter. Results Two thousand seventy-nine children were included in the study, with ages ranging from day of birth to 17 years. Included were 807 white, 494 Hispanic, and 474 African-American individuals, in addition to Asian, unknown and mixed race individuals. African-American children had thinner corneas on average than that of both white (p< .001) and Hispanic children (p< .001) by approximately 20 micrometers. Thicker median CCT was observed with each successive year of age from age 1 to 11 years, with year-to-year differences steadily decreasing and reaching a plateau after age 11 at 573 micrometers in white and Hispanic children and 551 micrometers in African-American children. For every 100 micrometers of thicker CCT measured, the intraocular pressure was 1.5 mmHg higher on average (p< 0.001). For every diopter of increased myopic refractive error (p< 0.001) CCT was 1 micrometer thinner on average. Conclusions Median CCT increases with age from 1 to 11 years with the greatest increase present in the youngest age groups. African-American children on average have thinner central corneas than white and Hispanic children, while white and Hispanic children demonstrate similar central corneal thickness. PMID:21911662

  7. Thickness of western mare basalts

    NASA Technical Reports Server (NTRS)

    Dehon, R. A.

    1979-01-01

    An isopach map of the basalt thickness in the western mare basins is constructed from measurements of the exposed external rim height of partially buried craters. The data, although numerically sparse, is sufficiently distributed to yield gross thickness variations. The average basalt thickness in Oceanus Procellarum and adjacent regions is 400 m with local lenses in excess of 1500 m in the circular maria. The total volume of basalt in the western maria is estimated to be in the range of 1.5 x 10 to the 6th power cu km. The chief distinction between the eastern and western maria appears to be one of basalt volumes erupted to the surface. Maximum volumes of basalt are deposited west of the central highlands and flood subjacent terrain to a greater extent than on the east. The surface structures of the western maria reflect the probability of a greater degree of isostatic response to a larger surface loading by the greater accumulation of mare basalt.

  8. Syntheses and reductions of C-dimesitylboryl-1,2-dicarba-closo-dodecaboranes.

    PubMed

    Kahlert, Jan; Böhling, Lena; Brockhinke, Andreas; Stammler, Hans-Georg; Neumann, Beate; Rendina, Louis M; Low, Paul J; Weber, Lothar; Fox, Mark A

    2015-06-01

    Two C-dimesitylboryl-1,2-dicarba-closo-dodecaboranes, 1-(BMes2)-2-R-1,2-C2B10H10 (1, R = H, 2, R = Ph), were synthesised by lithiation of 1,2-dicarba-closo-dodecaborane and 1-phenyl-1,2-dicarba-closo-dodecaborane, respectively, with n-butyllithium and subsequent reaction with fluorodimesitylborane. These novel compounds were structurally characterised by X-ray crystallography. Compounds 1 and 2 are hydrolysed on prolonged exposure to air to give mesitylene and boronic acids 1-(B(OH)2)-2-R-1,2-C2B10H10 (3, R = H, 4, R = Ph respectively). Addition of fluoride anions to 1 and 2 resulted in boryl-carborane bond cleavage to give dimesitylborinic acid HOBMes2. UV absorption bands at 318-333 nm were observed for 1 and 2 corresponding to local π-π*-transitions within the dimesitylboryl groups while visible emissions at 541-664 nm with Stokes shifts of 11 920-16 170 cm(-1) were attributed to intramolecular charge transfer transitions between the mesityl and cluster groups. Compound was shown by cyclic voltammetry to form a stable dianion on reduction. NMR spectra for the dianion [](2-) were recorded from solutions generated by reductions of 2 with alkali metals and compared with NMR spectra from reductions of 1,2-diphenyl-ortho-carborane 5. On the basis of observed and computed (11)B NMR shifts, these nido-dianions contain bowl-shaped cluster geometries. The carborane is viewed as the electron-acceptor and the mesityl group is the electron-donor in C-dimesitylboryl-1,2-dicarba-closo-dodecaboranes. PMID:25939355

  9. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    NASA Astrophysics Data System (ADS)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-11-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ˜12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  10. Measuring Metal Thickness With an Electric Probe

    NASA Technical Reports Server (NTRS)

    Shumka, A.

    1986-01-01

    Thickness of metal parts measured from one side with aid of Kelvin probe. Method developed for measuring thickness of end plate on sealed metal bellows from outside. Suitable for thicknesses of few thousandth's of inch (few hundred micrometers). Method also used to determine thickness of metal coatings applied by sputtering, electroplating, and flame spraying.

  11. Measuring Rind Thickness on Polyurethane Foam

    NASA Technical Reports Server (NTRS)

    Johnson, C.; Miller, J.; Brown, H.

    1985-01-01

    Nondestructive test determines rind thickness of polyurethane foam. Surface harness of foam measured by Shore durometer method: hardness on Shore D scale correlates well with rind thickness. Shore D hardness of 20, for example, indicates rind thickness of 0.04 inch (1 millimeter). New hardness test makes it easy to determine rind thickness of sample nondestructively and to adjust fabrication variables accordingly.

  12. Thickness effect on the optical and morphological properties in Al2O3/ZnO nanolaminate thin films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    López, J.; Martínez, J.; Abundiz, N.; Domínguez, D.; Murillo, E.; Castillón, F. F.; Machorro, R.; Farías, M. H.; Tiznado, H.

    2016-02-01

    In this work, we studied the optical and morphological properties of ultrathin nanolaminate films based on Al2O3/ZnO (AZ) bilayers stack. The films were deposited on Si (100) by means of thermal atomic layer deposition (ALD) technique. The bilayer thicknesses (ratio = 1:1) were 0.2, 1, 2, 4, 10 and 20 nm. Refractive index (n) and band gap (Eg) of each nanolaminate were studied via spectroscopic ellipsometry (SE), and spectral reflectance ultraviolet-visible spectroscopy (UV-vis). Surface morphology and roughness parameters of the nanolaminates were measured by Atomic Force Microscopy (AFM). The optical and morphological properties were shown highly dependent on the bilayer thickness. Ellipsometric data treated through the Cody-Lorentz optical model revealed that the refractive index decreases for thinner bilayers. A sharp intensity decay of refractive index and peaks at the UV region (200-400 nm) indicated increased transparency for thinner bilayers. It is also shown that the band gap is tunable. The maximum band gap value was 4.8 eV. These results reveal that ZnO combined with Al2O3 as bilayers stack can be converted into a dielectric material with enhanced band gap, opening the possibility for new optical and dielectric applications.

  13. Vibration Analysis of Stepped Thickness Plates

    NASA Astrophysics Data System (ADS)

    Guo, S. J.; Keane, A. J.; Moshrefi-Torbati, M.

    1997-07-01

    Investigation has been made into various approaches for analyzing the vibration of plates with stepped thicknesses. First, attention has been paid to updating a classical approach for the analysis of such problems, correcting the boundary conditions cited in an earlier paper and dealing with the difficulties that can arise when calculating high order modes. Secondly, contribution has been made to improving the classical finite strip method (FSM) by replacing the "static" shape function of the strip element by a "dynamic" function. This leads to the development of a dynamic finite strip method which improves solution accuracy without compromising model size and which therefore is more efficient than the classical FSM. When compared with the finite element method (FEM), which is also considered here, the advantages of smaller model size and higher accuracy of the dynamic FSM are significant. In order to demonstrate the application of the above approaches, the modes of simply supported plates with uniform and stepped thicknesses have been analyzed. From this numerical study, it is noted that the updated classical approach can be used to obtain a solution for any order mode to any specified accuracy and is the most efficient approach considered in the present study. It is also noted that, compared with the FEM of similar solution accuracy, the dynamic finite strip method normally produces a much smaller model size, so that such calculations are significantly more efficient than for the FEM. The aim of this work is to establish methods for the analysis of stepped plates that might be used in optimization studies where speed of formulation and solution are at a premium. There are, of course, a number of other methods that could be used to tackle such problems, but they lie outside the scope of this work; see for example the papers of Liew and co-authors [1, 2].

  14. The ultraviolet photodissociation of Cl2O at 235 nm and of HOCl at 235 and 266 nm

    NASA Astrophysics Data System (ADS)

    Tanaka, Yoshiki; Kawasaki, Masahiro; Matsumi, Yutaka; Fujiwara, Hisashi; Ishiwata, Takashi; Rogers, Leon J.; Dixon, Richard N.; Ashfold, Michael N. R.

    1998-07-01

    The primary photochemistry of gas phase dichlorine monoxide (Cl2O) and of hypochlorous acid (HOCl) following excitation at 235 nm has been investigated using photofragment ion imaging to obtain the recoil velocity and angular distributions of the ground (2P3/2) and spin-orbit excited (2P1/2) atomic chlorine products. In the case of Cl2O, both Cl spin-orbit products exhibit angular distributions characterized by an anisotropy parameter, β=1.2±0.2, consistent with previous interpretations of the ultraviolet (UV) absorption spectrum of Cl2O which associate the broad intense absorption feature peaking at λ˜255 nm with excitation to a (bent) dissociative state of 1B2(C2v) symmetry. The recoil velocity distributions of the two Cl spin-orbit products are markedly different. The ground state atoms (which constitute >90% of the total Cl atom yield) are partnered by ClO fragments carrying significantly higher average levels of internal excitation. The slowest Cl atoms are most readily understood in terms of three body fragmentation of Cl2O to its constituent atoms. These findings are rationalized in terms of a model potential energy surface for the 1 1B2 state, which correlates diabatically with ClO(X) radicals together with a spin-orbit excited Cl atom, with efficient radiationless transfer to one (or more) lower energy surfaces at extended Cl-O bond lengths accounting for the dominance of ground state Cl atom fragments. The image of the ground state Cl atoms resulting from photolysis of HOCl at 235 nm is consistent with parent excitation via a transition for which the dipole moment is closely aligned with the Cl-O bond, followed by prompt dissociation (β=1.7±0.2) with the bulk of the excess energy partitioned into product recoil. Such conclusions are consistent with the results of laser induced fluorescence measurements of the OH(X) products resulting from 266 nm photodissociation of HOCl which reveal OH(X) products in both spin-orbit states, exclusively in their

  15. Progress towards measuring the 2S1 / 2 to 2P1 / 2 interval in hydrogen

    NASA Astrophysics Data System (ADS)

    Vutha, A. C.; Bezginov, N.; Ferchichi, I.; Hessels, E. A.

    2015-05-01

    There is a large discrepancy between the CODATA value for the proton charge radius, and its determinations from muonic hydrogen measurements. This discrepancy is referred to as the proton radius puzzle. Improved measurements on atomic hydrogen can elucidate the origins of this discrepancy. We have constructed an experiment to measure the Lamb shift (n = 2 ,S1 / 2 -->P1 / 2) in a fast beam of atomic hydrogen. Using a novel separated-oscillatory-fields method and high signal-to-noise ratio detection, we can measure the center of this transition with a statistical uncertainty approaching 10-5 of its natural linewidth. We report on our studies of systematic effects, and on our progress towards a new measurement of the proton charge radius. We acknowledge funding from NSERC, CFI, CRC, ORF, and NIST.

  16. Electrical properties of Ba(Dy1/2Nb1/2)O3 ceramic

    NASA Astrophysics Data System (ADS)

    Nath, K. Amar; Chandra, K. P.; Dubey, K.; Prasad, K.

    2016-05-01

    Polycrystalline Ba(Dy1/2Nb1/2)O3 was prepared using a high-temperature solid-state reaction method. X-ray diffraction analysis indicated the formation of a single-phase cubic structure having space group Pm3m. AC impedance plots as a function of frequency at different temperatures were used to analyse the electrical behaviour of the sample, which indicated the negative temperature coefficient of resistance character. Complex impedance analysis targeted non-Debye type dielectric relaxation. Frequency dependent ac conductivity data obeyed Jonscher's power law. The apparent activation energy was estimated to be 0.97 eV at 1 kHz.

  17. Radiation Tolerance of 65nm CMOS Transistors

    DOE PAGESBeta

    Krohn, M.; Bentele, B.; Christian, D. C.; Cumalat, J. P.; Deptuch, G.; Fahim, F.; Hoff, J.; Shenai, A.; Wagner, S. R.

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  18. Negative-tone 193-nm resists

    NASA Astrophysics Data System (ADS)

    Cho, Sungseo; Vander Heyden, Anthony; Byers, Jeff D.; Willson, C. Grant

    2000-06-01

    A great deal of progress has been made in the design of single layer positive tone resists for 193 nm lithography. Commercial samples of such materials are now available from many vendors. The patterning of certain levels of devices profits from the use of negative tone resists. There have been several reports of work directed toward the design of negative tones resists for 193 nm exposure but, none have performed as well as the positive tone systems. Polymers with alicyclic structures in the backbone have emerged as excellent platforms from which to design positive tone resists for 193 nm exposure. We now report the adaptation of this class of polymers to the design of high performance negative tone 193 nm resists. New systems have been prepared that are based on a polarity switch mechanism for modulation of the dissolution rate. The systems are based on a polar, alicyclic polymer backbone that includes a monomer bearing a glycol pendant group that undergoes the acid catalyzed pinacol rearrangement upon exposure and bake to produce the corresponding less polar ketone. This monomer was copolymerized with maleic anhydride and a norbornene bearing a bis-trifluoromethylcarbinol. The rearrangement of the copolymer was monitored by FT-IR as a function of temperature. The synthesis of the norbornene monomers will be presented together with characterization of copolymers of these monomers with maleic anhydride. The lithographic performance of the new resist system will also be presented.

  19. White Sands, Carrizozo Lava Beds, NM

    NASA Technical Reports Server (NTRS)

    1973-01-01

    A truly remarkable view of White Sands and the nearby Carrizozo Lava Beds in southeast NM (33.5N, 106.5W). White Sands, site of the WW II atomic bomb development and testing facility and later post war nuclear weapons testing that can still be seen in the cleared circular patterns on the ground.

  20. ERK1/2 can feedback-regulate cellular MEK1/2 levels.

    PubMed

    Hong, Seung-Keun; Wu, Pui-Kei; Karkhanis, Mansi; Park, Jong-In

    2015-10-01

    Signal transduction of the Raf/MEK/ERK pathway is regulated by various feedback mechanisms. Given the greater molar ratio between Raf-MEK than between MEK-ERK in cells, it may be possible that MEK1/2 levels are regulated to modulate Raf/MEK/ERK activity upon pathway stimulation. Nevertheless, it has not been reported whether MEK1/2 expression can be subject to a feedback regulation. Here, we report that the Raf/MEK/ERK pathway can feedback-regulate cellular MEK1 and MEK2 levels. In different cell types, ΔRaf-1:ER- or B-Raf(V600E)-mediated MEK/ERK activation increased MEK1 but decreased MEK2 levels. These regulations were abrogated by ERK1/2 knockdown mediated by RNA interference, suggesting the presence of a feedback mechanism that regulates MEK1/2 levels. Subsequently, analyses using qPCR and luciferase reporters of the DNA promoter and 3' untranslated region revealed that the feedback MEK1 upregulation was in part attributed to increased transcription. However, the feedback MEK2 downregulation was only observed at protein levels, which was blocked by the proteasome inhibitors, MG132 and bortezomib, suggesting that the MEK2 regulation is mediated at a post-translational level. These results suggest that the Raf/MEK/ERK pathway can feedback-regulate cellular levels of MEK1 and MEK2, wherein MEK1 levels are upregulated at transcriptional level whereas MEK2 levels are downregulated at posttranslational level. PMID:26163823

  1. Thickness dependent optical and electrical properties of CdSe thin films

    NASA Astrophysics Data System (ADS)

    Purohit, A.; Chander, S.; Nehra, S. P.; Lal, C.; Dhaka, M. S.

    2016-05-01

    The effect of thickness on the optical and electrical properties of CdSe thin films is investigated in this paper. The films of thickness 445 nm, 631 nm and 810 nm were deposited on glass and ITO coated glass substrates using thermal evaporation technique. The deposited thin films were thermally annealed in air atmosphere at temperature 100°C and were subjected to UV-Vis spectrophotometer and source meter for optical and electrical analysis respectively. The absorption coefficient is observed to increase with photon energy and found maximum in higher photon energy region. The extinction coefficient and refractive index are also calculated. The electrical analysis shows that the electrical resistivity is observed to be decreased with thickness.

  2. Unconventional spin distributions in thick Ni80Fe20 nanodisks

    NASA Astrophysics Data System (ADS)

    Kumar, D.; Lupo, P.; Haldar, A.; Adeyeye, A. O.

    2016-05-01

    We study the spin distributions in permalloy (Py: Ni80Fe20) nanodisks as a function of diameter D (300 nm ≤ D ≤ 1 μm) and thickness L (30 nm ≤ L ≤ 100 nm). We observed that beyond a certain thickness, for a fixed disk diameter, an unconventional spin topology precipitates which is marked by the presence of a divergence field within the magnetic vortex curl. The strength of this divergence changes anti-symmetrically from negative to positive—depending on the core polarity—along the axis of the cylindrical nanodisk. This is also accompanied by a skyrmion-like out-of-plane bending of the spin vectors farther away from the disk center. Additionally, the vortex core dilates significantly when compared to its typical size. This has been directly observed using magnetic force microscopy. We determined from the ferromagnetic resonance spectroscopy measurements that the unconventional topology in the thicker nanodisks gyrated at a frequency, which is significantly lower than what is predicted by a magnetic vortex based analytical model. Micromagnetic simulations involving dipolar and exchange interactions appear to satisfactorily reproduce the experimentally observed static and dynamic behaviors. Besides providing a physical example of an unconventional topology, these results can also aid the design of topologically protected memory elements.

  3. Characterization of Thin Film Dissolution in Water with in Situ Monitoring of Film Thickness Using Reflectometry.

    PubMed

    Yersak, Alexander S; Lewis, Ryan J; Tran, Jenny; Lee, Yung C

    2016-07-13

    Reflectometry was implemented as an in situ thickness measurement technique for rapid characterization of the dissolution dynamics of thin film protective barriers in elevated water temperatures above 100 °C. Using this technique, multiple types of coatings were simultaneously evaluated in days rather than years. This technique enabled the uninterrupted characterization of dissolution rates for different coating deposition temperatures, postdeposition annealing conditions, and locations on the coating surfaces. Atomic layer deposition (ALD) SiO2 and wet thermally grown SiO2 (wtg-SiO2) thin films were demonstrated to be dissolution-predictable barriers for the protection of metals such as copper. A ∼49% reduction in dissolution rate was achieved for ALD SiO2 films by increasing the deposition temperatures from 150 to 300 °C. ALD SiO2 deposited at 300 °C and followed by annealing in an inert N2 environment at 1065 °C resulted in a further ∼51% reduction in dissolution rate compared with the nonannealed sample. ALD SiO2 dissolution rates were thus lowered to values of wtg-SiO2 in water by the combination of increasing the deposition temperature and postdeposition annealing. Thin metal films, such as copper, without a SiO2 barrier corroded at an expected ∼1-2 nm/day rate when immersed in room temperature water. This measurement technique can be applied to any optically transparent coating. PMID:27308723

  4. Effect of flake thickness on coercivity of nanocrystalline SmCo5 bulk prepared from anisotropic nanoflake powder

    NASA Astrophysics Data System (ADS)

    Shen, Y.; Leontsev, S.; Sheets, A. O.; Horwath, J. C.; Turgut, Z.

    2016-05-01

    In this study, nanocrystalline SmCo5 bulk magnets were prepared by hot-pressing of nanoflake powders fabricated via surfactant-assisted high energy ball milling. Effect of the flake thickness on magnetic coercivity of the SmCo5 bulk was investigated. Anisotropic SmCo5 nanoflakes with thickness between 100 and 1000 nm were prepared by varying the milling parameter of ball-to-powder weight ratio. XRD analysis revealed that as-milled flake powders possessed nanocrystalline grains with no observable oxide peaks. The coercivity of the flake powders varied between 19.9 and 21.3 kOe for 1000 nm to 100 nm thick flakes, which indicated that the flake thickness in this range had no obvious effect on the coercivity of the powders. However, the coercivity of the bulks showed a strong dependence on the flake thickness. The bulk coercivity value of 10.97 kOe corresponding to the flake thickness of 100 nm, was 80% higher compared to the bulk prepared with the flakes of 1000 nm. XRD results on compacted samples did not show any grain growth, however, Sm2O3 and free Co were detected in SmCo5 bulks and their content increased with reduced flake thickness. Interestingly enough the bulk coercivity was not deteriorated with the presence of Sm oxide and Co.

  5. Activationless charge transport across 4.5 to 22 nm in molecular electronic junctions

    PubMed Central

    Yan, Haijun; Bergren, Adam Johan; McCreery, Richard; Della Rocca, Maria Luisa; Martin, Pascal; Lafarge, Philippe; Lacroix, Jean Christophe

    2013-01-01

    In this work, we bridge the gap between short-range tunneling in molecular junctions and activated hopping in bulk organic films, and greatly extend the distance range of charge transport in molecular electronic devices. Three distinct transport mechanisms were observed for 4.5–22-nm-thick oligo(thiophene) layers between carbon contacts, with tunneling operative when d < 8 nm, activated hopping when d > 16 nm for high temperatures and low bias, and a third mechanism consistent with field-induced ionization of highest occupied molecular orbitals or interface states to generate charge carriers when d = 8–22 nm. Transport in the 8–22-nm range is weakly temperature dependent, with a field-dependent activation barrier that becomes negligible at moderate bias. We thus report here a unique, activationless transport mechanism, operative over 8–22-nm distances without involving hopping, which severely limits carrier mobility and device lifetime in organic semiconductors. Charge transport in molecular electronic junctions can thus be effective for transport distances significantly greater than the 1–5 nm associated with quantum-mechanical tunneling. PMID:23509271

  6. Activationless charge transport across 4.5 to 22 nm in molecular electronic junctions.

    PubMed

    Yan, Haijun; Bergren, Adam Johan; McCreery, Richard; Della Rocca, Maria Luisa; Martin, Pascal; Lafarge, Philippe; Lacroix, Jean Christophe

    2013-04-01

    In this work, we bridge the gap between short-range tunneling in molecular junctions and activated hopping in bulk organic films, and greatly extend the distance range of charge transport in molecular electronic devices. Three distinct transport mechanisms were observed for 4.5-22-nm-thick oligo(thiophene) layers between carbon contacts, with tunneling operative when d < 8 nm, activated hopping when d > 16 nm for high temperatures and low bias, and a third mechanism consistent with field-induced ionization of highest occupied molecular orbitals or interface states to generate charge carriers when d = 8-22 nm. Transport in the 8-22-nm range is weakly temperature dependent, with a field-dependent activation barrier that becomes negligible at moderate bias. We thus report here a unique, activationless transport mechanism, operative over 8-22-nm distances without involving hopping, which severely limits carrier mobility and device lifetime in organic semiconductors. Charge transport in molecular electronic junctions can thus be effective for transport distances significantly greater than the 1-5 nm associated with quantum-mechanical tunneling. PMID:23509271

  7. New polymer for 157-nm single-layer resist based on fluorine-containing acryl copolymer

    NASA Astrophysics Data System (ADS)

    Ogata, Toshiyuki; Endo, Koutaro; Komano, Hiroshi; Nakayama, Toshimasa

    2001-08-01

    We are reporting on the development of acryl polymer based on novel methacrylate and acrylate monomers with various trifluoromethyl groups for the application to 157nm chemically amplified positive-tone resists. The (alpha) - trifluoromethylation of the alkyl ester in methacrylate or acrylate could employ the reduction of acrylpolymer absorbance at 157nm by spectra analysis with the VUV-200 spectrophotometer by JASCO. Although the trifluoromethyl groups could employ the reduction of base polymer absorbance at 157nm, the homopolymers have issued weak etch resistance as a photoresist base polymer. To take account of this issue, we have developed a novel monomer, trifluoromethyl- iso-adamantylmethacrylate (TFIAdMA) and a new co-polymer system with the combination of fluorinated methacrylate derivatives and substituted p-hydroxystyrene. The absorption coefficient of poly(p-tert-butoxystyren-co- hexafluoro-tert-butyl methacrylate-co-methacrylic acid) incicated to be less than 3 micrometers -1 at 157nm. Patterning results were obtained with a 157nm contact exposure system of VUVES-4500 by LTJ. One of the experimental resists, based on a particular polymer ratio and photo acid generator, has clearly achieved 180nm line and space pattern resolution. At 140nm resist film thickness, the sensitivity was 31 mJ/cm2 when using 0,26N tetrametylammonium hydroxide surfactant type developer.

  8. VizieR Online Data Catalog: Thorium spectrum from 250nm to 5500nm (Redman+, 2014)

    NASA Astrophysics Data System (ADS)

    Redman, S. L.; Nave, G.; Sansonetti, C. J.

    2014-04-01

    We observed the spectrum of a commercial sealed Th/Ar HCL running at 25mA for almost 15hr starting on 2011 November 2. The region of observation was limited to between 8500/cm and 28000/cm (360nm and 1200nm) by the sensitivity of the silicon photodiode detector. (5 data files).

  9. Influence of the interface on the magnetic properties of ferromagnetic ultrathin films with various adjacent copper thicknesses

    NASA Astrophysics Data System (ADS)

    Zhang, Dong; Jiang, Sheng; Luo, Chen; Wang, Yukun; Rui, Wenbin; Zhai, Ya; Du, Jun; Zhai, Hongru

    2014-05-01

    The interface and magnetic properties of two series of films with Ta(5 nm)/Fe20Ni80Nd0.017(3 nm)/Cu(t nm) and Ta(5 nm)/Cu(t nm)/Fe50Co50Gd0.07(3 nm)/Cu(2 nm) structures have been investigated by atomic force microscopy, vibrating sample magnetometer, and ferromagnetic resonance (FMR). The roughness of all films increases with increasing copper thickness, which causes the different grain sizes in the surface of films. The coercivity of FeCo-Gd films increases with increasing thickness of inserted Cu layer while decreases with increasing thickness of Cu capping layer for FeNi-Nd films. FMR linewidth exhibits huge dependence on the thickness of inserted Cu layer for FeCo-Gd films, increasing from 2270 to 3680 Oe, which comes from the additional contribution of effect of the two-magnon scattering. And the thickness of Cu capping layer shows also an influence on FMR linewidth of FeNi-Nd films, increasing from 190 to 320 Oe, which mainly comes from intrinsic FMR linewidth and plus minor inhomogeneous broadening. All of these extrinsic linewidth broadening are related to the interface roughness.

  10. Total internal reflection without change of polarization using a right-angle prism with half-wavelength-thick optical interference coating.

    PubMed

    Azzam, R M A

    2009-02-01

    Monochromatic light, which is polarized in an arbitrary state, is totally internally reflected at angle of incidence phi=45 degrees without change of polarization by a right-angle prism of refractive index n0=1+1/Square root of 2=1.70711 (e.g., N-LAK8 Schott glass at wavelength lambda=706 nm), which is coated with a transparent thin film of refractive index n1=(1+1/2)1/2=1.30656 (e.g., vacuum-deposited fluoride material) and of metric thickness equal to half of the vacuum wavelength of incident light, d=lambda/2. The ambient medium of evanescent refraction is assumed to be vacuum, air, or an inert gas. Wavelength shifts of +/-50 nm, or changes of the internal angle of incidence of +/-1 degrees around 45 degrees, cause phase errors of only a few degrees. The reflected and incident polarization states are nearly identical in the presence of such small phase errors. PMID:19183662

  11. Metabolism of 1,2,3,4-, 1,2,3,5-, and 1,2,4,5-tetrachlorobenzene in the squirrel monkey

    SciTech Connect

    Schwartz, H.; Chu, I.; Villeneuve, D.C.; Benoit, F.M.

    1987-01-01

    The metabolism of three tetrachlorobenzene isomers (TeCB) was investigated in the squirrel monkey. The animals were administered orally 6 single doses of /sup 14/C-labeled 1,2,3,4-, 1,2,4,5-, or 1,2,3,5-tetrachlorobenzene over a 3-wk period at levels ranging from 50 to 100 mg/kg body weight (b.w) and kept in individual metabolism cages to collect urine and feces for radioassay. Approximately 38% (1,2,3,4-TeCB), 36% (1,2,3,5-TeCB), and 18% (1,2,4,5-TeCB) of the doses were excreted respectively in the feces 48 h post administration. In monkeys dosed with 1,2,3,4-TeCB, unchanged compound accounted for 50% of the fecal radioactivity. Unchanged compound accounted for more than 50% of the fecal radioactivity found in the monkeys dosed with 1,2,3,5-TeCB. The fecal metabolites were identified in both groups. No metabolites were detected in the feces of monkeys dosed with 1,2,4,5-TeCB. While the fecal route represented the major route of excretion for 1,2,3,4-TeCB, the other two isomers were eliminated exclusively in the feces. The above data in the squirrel monkey are different from those obtained with the rat and the rabbit, and demonstrate the different metabolic pathways for the isomers.

  12. Post-weld Tempered Microstructure and Mechanical Properties of Hybrid Laser-Arc Welded Cast Martensitic Stainless Steel CA6NM

    NASA Astrophysics Data System (ADS)

    Mirakhorli, Fatemeh; Cao, Xinjin; Pham, Xuan-Tan; Wanjara, Priti; Fihey, Jean-Luc

    2016-01-01

    Manufacturing of hydroelectric turbine components involves the assembly of thick-walled stainless steels using conventional multi-pass arc welding processes. By contrast, hybrid laser-arc welding may be an attractive process for assembly of such materials to realize deeper penetration depths, higher production rates, narrower fusion, and heat-affected zones, and lower distortion. In the present work, single-pass hybrid laser-arc welding of 10-mm thick CA6NM, a low carbon martensitic stainless steel, was carried out in the butt joint configuration using a continuous wave fiber laser at its maximum power of 5.2 kW over welding speeds ranging from 0.75 to 1.2 m/minute. The microstructures across the weldment were characterized after post-weld tempering at 873 K (600 °C) for 1 hour. From microscopic examinations, the fusion zone was observed to mainly consist of tempered lath martensite and some residual delta-ferrite. The mechanical properties were evaluated in the post-weld tempered condition and correlated to the microstructures and defects. The ultimate tensile strength and Charpy impact energy values of the fully penetrated welds in the tempered condition were acceptable according to ASTM, ASME, and industrial specifications, which bodes well for the introduction of hybrid laser-arc welding technology for the manufacturing of next generation hydroelectric turbine components.

  13. 1060nm 28-Gbps VCSEL developed at Furukawa

    NASA Astrophysics Data System (ADS)

    Suzuki, Toshihito; Funabashi, Masaki; Shimizu, Hitoshi; Nagashima, Kazuya; Kamiya, Shinichi; Kasukawa, Akihiko

    2014-02-01

    This paper presents recent development results of our 28-Gbps VCSELs featured with double intra-cavity structure and a lasing wavelength of 1060 nm. The double intra-cavity realizes very low cavity loss due to undoped semiconductor bottom DBR and dielectric top DBR layers. Compressively strained InGaAs MQW provides high differential gain that contributes to low power consumption and high reliability. Based on our 10-Gbps VCSEL structure, we carefully optimized MQW, selective oxide structure, cavity length, and doping profile in order to achieve high speed operation while maintaining high reliability and other laser performances. The developed VCSELs exhibit modulation 3 dB-bandwidth exceeding 20 GHz and D-factor of 10 GHz/(mA)1/2. Typical threshold current and slope efficiency are 0.5 mA and 0.5 W/A, respectively. The paper also discusses static and dynamic characteristics of VCSELs with various oxide aperture sizes simultaneously fabricated on the same wafer. For a longer transmission distance and better optical coupling to a multimode fiber, optical lateral confinement is precisely controlled to reduce spectral width as well as far-field pattern. Clearly opened eye diagrams are obtained at a bit rate of 28 Gbps. Bit error rate tests are also performed and 28 Gbps error free transmission has been confirmed over 300 meters of multimode-fiber optimized for 1060 nm with a PRBS pattern length of 231-1.

  14. Enhanced radiation tolerance in nitride multilayered nanofilms with small period-thicknesses

    SciTech Connect

    Hong Mengqing; Ren Feng; Zhang Hongxiu; Xiao Xiangheng; Tian Canxin; Fu Dejun; Jiang Changzhong; Yang Bing; Wang Yongqiang

    2012-10-08

    This paper demonstrates a substantial enhancement in radiation tolerance for small period-thickness of CrN/AlTiN multilayered nanofilms. CrN/AlTiN multilayered nanofilms with period-thicknesses of 3, 5, 7, and 9 nm were irradiated by 190 keV Ar{sup +} ions to fluences ranging from 1 to 5 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. Nanofilm with 3 nm period-thickness begins to be amorphized under 5 Multiplication-Sign 10{sup 16} ions/cm{sup 2}, while those with larger period-thicknesses are amorphized under 3 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. Our results show that multilayered ceramic nanofilms are potential radiation tolerant materials with good properties. The interfaces in the multilayered nanofilms act as good sinks to absorb the radiation-induced defects.

  15. Ultrathin to Nano Thickness TiN Coatings: Processing, Structural, Mechanical Behavior

    NASA Astrophysics Data System (ADS)

    Mishra, S. K.; Kumar, Rakesh; Soni; Sreemany, M.; Pathak, L. C.

    2015-12-01

    The fabrication of titanium nitride (TiN) thin films with varying thicknesses by reactive magnetron sputtering at different substrate temperatures as well as deposition times has been investigated. With the increase of deposition times from 1 to 120 min, the TiN film thickness is increased from 15 nm to 2.1 µm. The effect of thickness and substrate temperature on the mechanical, microstructural, and structural behavior of these fabricated thin TiN films is investigated. The average hardness is found to vary between 22 and 42 GPa and modulus between 300 and 527 GPa. The grain sizes increase with the thickness of the deposited films and it is observed to vary between 20 and 65 nm.

  16. Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10 nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control

    SciTech Connect

    Zhang, Hui; Hosaka, Sumio; Yin, You

    2014-03-03

    We demonstrate the possibility of forming long-range ordered self-assembled arrays of 5-nm-diameter nanodots with pitch of 10 × 7.5 nm{sup 2} using guide line templates and low molecular weight (MW) (4700–1200 g/mol) poly(styrene)-poly(dimethylsiloxane) (PS-PDMS) for application in ultrahigh density patterned magnetic recording media. We propose a three-dimensional control which involves control of the height of the guide lines, the thickness of the PS-PDMS films, and the gap between the guide lines in order to produce 5-nm-diameter, sub-10 nm pitched nanodots with long-range order along the guide lines. Adopting a 13-nm-thick PS-PDMS film and 14-nm-high resist guide lines, the 5-nm-diameter and 10 × 7.5 nm{sup 2}-pitched self-assembled nanodots were ordered in 4–7 dot arrays with long-range order. The experimental results demonstrate that the method is suitable for the production of patterned media with magnetic recording densities of 8.6 Tbit/in.{sup 2} using low MW PS-PDMS and slim guide lines.

  17. Formulation of highly functionalizable DNA nanoparticles based on 1,2-dithiolane derivatives.

    PubMed

    Charrat, Coralie; Biscotti, Anaïs; Godeau, Guilhem; Greiner, Jacques; Vierling, Pierre; Guigonis, Jean-Marie; Di Giorgio, Christophe

    2015-03-23

    We describe the formulation of synthetic virus models based on ionic compounds bearing the polymerizable 1,2-dithiolane moiety. First, cationic amphiphiles containing the polymeric inducer were prepared and used to efficiently condense a DNA plasmid (pDNA) into a highly monodisperse population of small polymeric cationic DNA nanoparticles (NPs; Dh ∼100 nm). These nonspecific cationic particles were then functionalized with anionic PEGylated conjugates, also based on the 1,2-dithiolane motifs, in order to produce stable and fully dispersible stealth DNA nanoparticles. Our results show that both ionic interactions and polymerization based on the 1,2-dithiolane pattern occur and that they produce highly functionalizable nonviral DNA NPs. PMID:25689838

  18. Oxide thickness dependence of resistive switching characteristics for Ni/HfOx/Pt resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Ito, Daisuke; Hamada, Yoshihumi; Otsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso

    2015-06-01

    The switching process of the conductive filament formed in Ni/HfOx/Pt resistive random access memory (ReRAM) devices were studied. We evaluated the oxide thickness dependence and temperature dependence of voltage for the Forming, Set and Reset operations for HfOx layers whose thickness are between 3.3 and 6.5 nm. The resistance of conductive filaments showed typical metallic behavior, which suggests Ni filament formation in the HfOx layer. There is a clear dependence of switching voltages for the Set and Reset processes on oxide thickness, which implies that the formation and rupture of conductive filaments occur in the entire thickness range of the HfOx layer. This finding differs from that of a previous study by Yang, which suggests the existence of a constant-thickness switching region. It is suggested that the thickness of the switching region in HfOx may be larger than 6.5 nm.

  19. A new life for a 10-year old MueTec2010 CD measurement system: the ultimate precision upgrade with additional film thickness measurement capability

    NASA Astrophysics Data System (ADS)

    Cassol, Gian Luca; Bianucci, Giovanni; Murai, Shiaki; Falk, Günther; Scheuring, Gerd; Döbereiner, Stefan; Brück, Hans-Jürgen

    2006-06-01

    A 10-year old MueTec2010, white light CD measurement system, installed at DNP Photomask Europe and previously owned by STMicroelectronics, has been upgraded to fulfill the high-end optical CD measurement requirements, and to add the film thickness measurement capability. That is the ultimate upgrade, consisting of two new computers with WINDOWS 2000 operating system, a new 150X measurement objective, a new 16-bit CCD digital camera, a new tube lens for the old Leica Ergoplan microscope, and the NanoStar software with the pattern recognition option. The upgrade yielded an average 45% repeatability improvement for isolated and dense lines and spaces, with 1.2nm average repeatability in a 0.3-10μm CD nominal range. Contact holes report an average 50% repeatability improvement, with 2.5nm average repeatability. The improved precision allows a +/-2-nm CD calibration and correlation down to 0.4μm CD nominal. Overall, the upgraded MueTec2010 shows same or better performance than the already installed Leica LWM250UV CD measurement system, despite the longer illumination wavelength of the former. The improved short and long term repeatability reduced the Gauge RandR figure from 24% to 11% at +/-20nm tolerance, which qualifies the system for high-end binary mask down to 0.5μm CD nominal. The feasibility to calibrate the system for 248nm Molybdenum Silicide Phase Shifting Masks is currently being investigated. In addition to that, the new measurement algorithms, the capability to take multiple measurements within the FOV, and the pattern recognition capability included in the NanoStar software gave a 75% throughput boost to the fully automated macros for the weekly calibration tests of the laser writing tools, compared to the LWM250UV run time. With little additional hardware and software, the system has also been upgraded to include the film thickness measurement capability for the PSM resist coating process (2nd exposure), without the need for a dedicated, more expensive

  20. Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs

    SciTech Connect

    Karcher, Armin; Bebek, Christopher J.; Kolbe, William F.; Maurath, Dominic; Prasad, Valmiki; Uslenghi, Michela; Wagner, Martin

    2004-06-30

    Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800 x 1100, 15 mu m pixel, 280 mu m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.

  1. Optimal thickness of silicon membranes to achieve maximum thermoelectric efficiency: A first principles study

    NASA Astrophysics Data System (ADS)

    Mangold, Claudia; Neogi, Sanghamitra; Donadio, Davide

    2016-08-01

    Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ˜7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.

  2. Topography measurements of the critical thickness of ZnSe grown on GaAs

    NASA Astrophysics Data System (ADS)

    Horsburgh, G.; Prior, K. A.; Meredith, W.; Galbraith, I.; Cavenett, B. C.; Whitehouse, C. R.; Lacey, G.; Cullis, A. G.; Parbrook, P. J.; Möck, P.; Mizuno, K.

    1998-06-01

    Synchrotron-based x-ray topography (XRT) measurements have been used to study the initial stages of relaxation in ZnSe layers grown by molecular beam epitaxy on vertical gradient freeze Bridgman GaAs substrates. The formation of the very first strain-relieving misfit dislocations in the grown ZnSe layers has been detected in a layer of thickness 100 nm. No such dislocations have been observed in a corresponding layer of 95 nm thickness. The critical thickness for this material system is therefore estimated to be 97.5±2.5 nm, which is markedly lower than the widely accepted value of 150 nm. In contrast to the InGaAs/GaAs system, combined XRT and transmission electron microscopy studies indicate that the initial misfit dislocations observed for ZnSe/GaAs are not, in general, formed by the bending over of pre-existing threading dislocations into the interface, but by other mechanisms such as stacking fault decomposition. The critical thickness data obtained have been used to infer the maximum critical thickness of CdZnSe quantum wells possible in II-VI laser diodes.

  3. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications.

    PubMed

    Zhang, Youwei; Li, Hui; Wang, Haomin; Xie, Hong; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-01-01

    Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors. PMID:27403803

  4. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications

    NASA Astrophysics Data System (ADS)

    Zhang, Youwei; Li, Hui; Wang, Haomin; Xie, Hong; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-07-01

    Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors.

  5. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications

    PubMed Central

    Zhang, Youwei; Li, Hui; Wang, Haomin; Xie, Hong; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-01-01

    Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors. PMID:27403803

  6. Structure and laser-fabrication mechanisms of microcones on silver films of variable thickness

    NASA Astrophysics Data System (ADS)

    Danilov, P. A.; Zayarny, D. A.; Ionin, A. A.; Kudryashov, S. I.; Nguyen, T. T. H.; Rudenko, A. A.; Saraeva, I. N.; Kuchmizhak, A. A.; Vitrik, O. B.; Kulchin, Yu. N.

    2016-04-01

    Submicron dimensions, nanoscale crystalline structure, and fabrication mechanisms of microcones on silver films of variable (50-380 nm) thickness deposited onto glass substrates by single strongly focused femtosecond laser pulses of different fluences are experimentally studied using scanning electron microscopy. Fabrication mechanisms for nanoholes and microcones are discussed for films of the different thickness, as well as the extraordinary shapes of their constituent nanocrystallites, strongly elongated along the melt flow direction in thin films.

  7. Laser damage database at 1064 nm

    SciTech Connect

    Rainer, F.; Gonzales, R.P.; Morgan, A.J.

    1990-03-01

    In conjunction with our diversification of laser damage testing capabilities, we have expanded upon a database of threshold measurements and parameter variations at 1064 nm. This includes all tests at low pulse-repetition frequencies (PRF) ranging from single shots to 120 Hz. These tests were conducted on the Reptile laser facility since 1987 and the Variable Pulse Laser (VPL) facility since 1988. Pulse durations ranged from 1 to 16 ns. 10 refs., 14 figs.

  8. Sunlight induced 685 nm fluorescence imagery

    NASA Technical Reports Server (NTRS)

    Kim, Hongsuk H.; Van Der Piepen, Heinz

    1986-01-01

    The capability of a new fluorescence method is evaluated using data from an aircraft fluorescence experiment conducted on the Elbe River on August 10-14, 1981. The technique measures chlorophyll concentrations by monitoring sunlight-induced fluorescence at 685 nm. Upwelling radiance spectra and vertical profiles of upwelling radiances are presented and analyzed. The image-processing algorithm used to retrieve fluorescence signals from raw data is described.

  9. Radiation Status of Sub-65 nm Electronics

    NASA Technical Reports Server (NTRS)

    Pellish, Jonathan A.

    2011-01-01

    Ultra-scaled complementary metal oxide semiconductor (CMOS) includes commercial foundry capabilities at and below the 65 nm technology node Radiation evaluations take place using standard products and test characterization vehicles (memories, logic/latch chains, etc.) NEPP focus is two-fold: (1) Conduct early radiation evaluations to ascertain viability for future NASA missions (i.e. leverage commercial technology development). (2) Uncover gaps in current testing methodologies and mechanism comprehension -- early risk mitigation.

  10. Binary 193nm photomasks aging phenomenon study

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sartelli, Luca; Pogliani, Carlo; Gough, Stuart; Sundermann, Frank; Miyashita, Hiroyuki; Hidenori, Yoshioka; Charras, Nathalie; Brochard, Christophe; Thivolle, Nicolas

    2011-05-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long period. These 193nm binary masks seem to be well-known but recent studies have shown surprising degrading effects, like Electric Field induced chromium Migration (EFM) [1] or chromium migration [2] [3] . Phase shift Masks (PSM) or Opaque MoSi On Glass (OMOG) might not be concerned by these effects [4] [6] under certain conditions. In this paper, we will focus our study on two layers gate and metal lines. We will detail the effects of mask aging, with SEM top view pictures revealing a degraded chromium edge profile and TEM chemical analyses demonstrating the growth of a chromium oxide on the sidewall. SEMCD measurements after volume production indicated a modified CD with respect to initial CD data after manufacture. A regression analysis of these CD measurements shows a radial effect, a die effect and an isolated-dense effect. Mask cleaning effectiveness has also been investigated, with sulphate or ozone cleans, to recover the mask quality in terms of CD. In complement, wafer intrafield CD measurements have been performed on the most sensitive structure to monitor the evolution of the aging effect on mask CD uniformity. Mask CD drift have been correlated with exposure dose drift and isolated-dense bias CD drift on wafers. In the end, we will try to propose a physical explanation of this aging phenomenon and a solution to prevent from it occurring.

  11. The dynamics of femtosecond pulsed laser removal of 20 nm Ni films from an interface

    SciTech Connect

    Schrider, Keegan J.; Yalisove, Steven M.; Torralva, Ben

    2015-09-21

    The dynamics of femtosecond laser removal of 20 nm Ni films on glass substrates was studied using time-resolved pump-probe microscopy. 20 nm thin films exhibit removal at two distinct threshold fluences, removal of the top 7 nm of Ni above 0.14 J/cm{sup 2}, and removal of the entire 20 nm film above 0.36 J/cm{sup 2}. Previous work shows the top 7 nm is removed through liquid spallation, after irradiation the Ni melts and rapidly expands leading to tensile stress and cavitation within the Ni film. This work shows that above 0.36 J/cm{sup 2} the 20 nm film is removed in two distinct layers, 7 nm and 13 nm thick. The top 7 nm layer reaches a speed 500% faster than the bottom 13 nm layer at the same absorbed fluence, 500–2000 m/s and 300–700 m/s in the fluence ranges studied. Significantly different velocities for the top 7 nm layer and bottom 13 nm layer indicate removal from an interface occurs by a different physical mechanism. The method of measuring film displacement from the development of Newton's rings was refined so it could be shown that the 13 nm layer separates from the substrate within 70 ps and accelerates to its final velocity within several hundred picoseconds. We propose that removal of the bottom 13 nm is consistent with heterogeneous nucleation and growth of vapor at the Ni-glass interface, but that the rapid separation and acceleration of the 13 nm layer from the Ni-glass interface requires consideration of exotic phases of Ni after excitation.

  12. Crystalline 1H-1,2,3-triazol-5-ylidenes

    DOEpatents

    Bertrand, Guy; Gulsado-Barrios, Gregorio; Bouffard, Jean; Donnadieu, Bruno

    2016-08-02

    The present invention provides novel and stable crystalline 1H-1,2,3 triazolium carbenes and metal complexes of 1H-1,2,3 triazolium carbenes. The present invention also provides methods of making 1H-1,2,3 triazolium carbenes and metal complexes of 1H-1,2,3 triazolium carbenes. The present invention also provides methods of using 1H-1,2,3 triazolium carbenes and metal complexes of 1H-1,2,3 triazolium carbenes in catalytic reactions.

  13. High Density Crossbar Arrays with Sub- 15 nm Single Cells via Liftoff Process Only

    PubMed Central

    Khiat, Ali; Ayliffe, Peter; Prodromakis, Themistoklis

    2016-01-01

    Emerging nano-scale technologies are pushing the fabrication boundaries at their limits, for leveraging an even higher density of nano-devices towards reaching 4F2/cell footprint in 3D arrays. Here, we study the liftoff process limits to achieve extreme dense nanowires while ensuring preservation of thin film quality. The proposed method is optimized for attaining a multiple layer fabrication to reliably achieve 3D nano-device stacks of 32 × 32 nanowire arrays across 6-inch wafer, using electron beam lithography at 100 kV and polymethyl methacrylate (PMMA) resist at different thicknesses. The resist thickness and its geometric profile after development were identified to be the major limiting factors, and suggestions for addressing these issues are provided. Multiple layers were successfully achieved to fabricate arrays of 1 Ki cells that have sub- 15 nm nanowires distant by 28 nm across 6-inch wafer. PMID:27585643

  14. High Density Crossbar Arrays with Sub- 15 nm Single Cells via Liftoff Process Only.

    PubMed

    Khiat, Ali; Ayliffe, Peter; Prodromakis, Themistoklis

    2016-01-01

    Emerging nano-scale technologies are pushing the fabrication boundaries at their limits, for leveraging an even higher density of nano-devices towards reaching 4F(2)/cell footprint in 3D arrays. Here, we study the liftoff process limits to achieve extreme dense nanowires while ensuring preservation of thin film quality. The proposed method is optimized for attaining a multiple layer fabrication to reliably achieve 3D nano-device stacks of 32 × 32 nanowire arrays across 6-inch wafer, using electron beam lithography at 100 kV and polymethyl methacrylate (PMMA) resist at different thicknesses. The resist thickness and its geometric profile after development were identified to be the major limiting factors, and suggestions for addressing these issues are provided. Multiple layers were successfully achieved to fabricate arrays of 1 Ki cells that have sub- 15 nm nanowires distant by 28 nm across 6-inch wafer. PMID:27585643

  15. Micromagnetic simulations of 200-nm-diameter cobalt nanorings using a Reuleaux triangular geometry

    NASA Astrophysics Data System (ADS)

    Torres-Heredia, J. J.; López-Urías, F.; Muñoz-Sandoval, E.

    2006-10-01

    Using micromagnetic simulations, we investigated the magnetic states and switching processes of Co nanorings with lateral dimensions of 200 nm. We propose a special geometry of nanorings that adopts different Reuleaux triangular shapes. Reuleaux's triangles (RT) combine both the equilateral triangle and circular geometries. We studied the magnetic spin configurations of individual nanorings by varying the thickness and geometry of the nanomagnets. Our results demonstrated that in most nanomagnets exhibiting a thickness of less than 4 nm, there exists an onion-type state, which precedes either a twisted, double twisted, or cardioid state, when studying the magnetization reversal process. The hysteresis loops and magnetic states found in these RTs are compared with circular nanorings.

  16. AIMS mask qualification for 32nm node

    NASA Astrophysics Data System (ADS)

    Richter, Rigo; Thaler, Thomas; Seitz, Holger; Stroessner, Ulrich; Scheruebl, Thomas

    2009-10-01

    Moving forward to 32nm node and below optical lithography using 193nm is faced with complex requirements to be solved. Mask makers are forced to address both Double Patterning Techniques and Computational Lithography approaches such as Source Mask Optimizations and Inverse Lithography. Additionally, lithography at low k1 values increases the challenges for mask repair as well as for repair verification and review by AIMSTM. Higher CD repeatability, more flexibility in the illumination settings as well as significantly improved image performance must be added when developing the next generation mask qualification equipment. This paper reports latest measurement results verifying the appropriateness of the latest member of AIMSTM measurement tools - the AIMSTM 32-193i. We analyze CD repeatability measurements on lines and spaces pattern. The influence of the improved optical performance and newly introduced interferometer stage will be verified. This paper highlights both the new Double Patterning functionality emulating double patterning processes and the influence of its critical parameters such as overlay errors and resist impact. Beneficial advanced illumination schemes emulating scanner illumination document the AIMSTM 32-193i to meet mask maker community's requirements for the 32nm node.

  17. Candida albicans β-1,2 mannosyl transferase Bmt3: Preparation and evaluation of a β (1,2), α (1,2)-tetramannosyl fluorescent substrate.

    PubMed

    Cattiaux, Laurent; Mée, Anaïs; Pourcelot, Marilyne; Sfihi-Loualia, Ghenima; Hurtaux, Thomas; Maes, Emmanuel; Fradin, Chantal; Sendid, Boualem; Poulain, Daniel; Fabre, Emeline; Delplace, Florence; Guérardel, Yann; Mallet, Jean-Maurice

    2016-03-15

    We describe for the first time the chemical synthesis of a tetramannoside, containing both α (1→2) and β (1→2) linkages. Dodecylthio (lauryl) glycosides were prepared from odorless dodecyl thiol and used as donors for the glycosylation steps. This tetramannoside, was coupled to a mantyl group, and revealed to be a perfect substrate of β-mannosyltransferase Bmt3, confirming the proposed specificity and allowing the preparation of a pentamannoside sequence (β Man (1,2) β Man (1,2) α Man (1,2) α Man (1,2) α Man) usable as a novel substrate for further elongation studies. PMID:26895658

  18. North Pole ice thickness and association with ice motion history 1977-1992

    NASA Astrophysics Data System (ADS)

    Shy, Timothy L.; Walsh, John E.

    Ice drafts measured by U.S. Navy submarine sonar near the North Pole from 1977 to 1992 were used together with Arctic Ocean drifting buoy data from 1979 to 1992 to investigate North Pole ice thickness changes during this 15-year period. A primary objective was to determine dynamical forcing mechanisms and associated time scales relevant to ice thickness variation. North Pole ice thickness showed much interannual variability, and no systematic decrease of ice thickness was observed. Changes in ice thickness were closely associated with long-term directional deviation of ice motion from geostrophic wind-forcing, and with ice convergence and divergence at the North Pole during the 1-2 weeks prior to submarine measurement. The geographic origin of ice within the Arctic Ocean was not associated with its eventual thickness at the North Pole.

  19. Measurement of Topcoat Thickness of Thermal Barrier Coating for Gas Turbines using Terahertz Waves

    NASA Astrophysics Data System (ADS)

    Fukuchi, Tetsuo; Fuse, Norikazu; Fujii, Tomoharu; Okada, Mitsutoshi; Fukunaga, Kaori; Mizuno, Maya

    The topcoat thickness of thermal barrier coating (TBC) samples was measured using terahertz (THz) waves. The index of refraction of yttria stabilized zirconia (YSZ), which is the topcoat material, is necessary to obtain the topcoat thickness from time domain reflectometry. Time domain THz spectroscopy was applied to YSZ samples, and the index of refraction was measured to be 4.8 in the frequency region 0.1-1.2 THz. The topcoat thickness of 6 different TBC samples, which varied from 300 to 600 μm, was measured using THz waves. The results were in agreement with microscope observation results to within measurement error. In addition, the topcoat thickness profile of a turbine blade sample was measured with 2.4 μm resolution. The profile showed a standard deviation of 4 μm, which reflects the actual variation in the topcoat thickness. The results showed that THz waves are effective for high resolution measurement of the topcoat thickness.

  20. Aminodisilanes as silylating agents for dry-developed positive-tone resists for deep-ultraviolet (248-nm) and extreme ultraviolet (13.5-nm) microlithography

    NASA Astrophysics Data System (ADS)

    Wheeler, David R.; Hutton, Richard S.; Boyce, Craig H.; Stein, Susan M.; Cirelli, Raymond A.; Taylor, Gary N.

    1995-06-01

    Disilanes are used as silylating reagents for near-surface imaging with deep-UV (248 nm) and EUV (13.5 nm) lithography. A relatively thin imaging layer of a photo-cross-linking resist is spun over a thicker layer of hard-baked resist that functions as a planarizing layer and antireflective coating. Photoinduced acid generation and subsequent heating crosslinks render exposed areas impermeable to an aminodisilane that reacts with the unexposed regions. Subsequent silylation and reactive ion etching affords a positive-tone image. The use of disilanes introduces a higher concentration of silicon into the polymer than is possible with silicon reagents that incorporate only one silicon atom per reactive site. The higher silicon content in the silylated polymer increases etching selectivity between exposed and unexposed regions and thereby increases the contrast. The synthesis and reactivity of `smaller' disilanes, N,N-dimethylamino-1,2-dimethyldisilane, (DMADMDS), and N,N-diethylamino-1,2- dimethyldisilane also are described. Additional silylation improvements that minimize flow during silylation also are discussed including the addition of bifunctional disilanes to the monofunctional DMAPMDS. This causes the crosslinking to occur during silylation which minimizes flow. We have resolved high aspect ratio, very high quality 0.20 micrometers line and space patterns at 248 nm with a stepper having a numerical aperture (NA) equals 0.53 and have resolved nm.

  1. Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

    NASA Astrophysics Data System (ADS)

    Green, M. L.; Gusev, E. P.; Degraeve, R.; Garfunkel, E. L.

    2001-09-01

    The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal-oxide-semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices will be manufactured with SiO2 and Si-O-N for the foreseeable future, continued scaling of integrated circuit devices, essentially the continued adherence to Moore's law, will necessitate the introduction of an alternate gate dielectric once the SiO2 gate dielectric thickness approaches ˜1.2 nm. It is hoped that this article will prove useful to members of the silicon microelectronics community, newcomers to the gate dielectrics field, practitioners in allied fields, and graduate students. Parts of this article have been adapted from earlier articles by the authors [L. Feldman, E. P. Gusev, and E. Garfunkel, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' (Kluwer, Dordrecht, 1998), p. 1 [Ref. 1]; E. P. Gusev, H. C. Lu, E. Garfunkel, T. Gustafsson, and M. Green, IBM J. Res. Dev. 43, 265 (1999) [Ref. 2]; R. Degraeve, B. Kaczer, and G. Groeseneken, Microelectron. Reliab. 39, 1445 (1999) [Ref. 3].

  2. High-resolution projection image reconstruction of thick objects by hard x-ray diffraction microscopy

    SciTech Connect

    Takahashi, Yukio; Nishino, Yoshinori; Tsutsumi, Ryosuke; Zettsu, Nobuyuki; Matsubara, Eiichiro; Yamauchi, Kazuto; Ishikawa, Tetsuya

    2010-12-01

    Hard x-ray diffraction microscopy enables us to observe thick objects at high spatial resolution. The resolution of this method is limited, in principle, by only the x-ray wavelength and the largest scattering angle recorded. As the resolution approaches the wavelength, the thickness effect of objects plays a significant role in x-ray diffraction microscopy. In this paper, we report high-resolution hard x-ray diffraction microscopy for thick objects. We used highly focused coherent x rays with a wavelength of {approx}0.1 nm as an incident beam and measured the diffraction patterns of a {approx}150-nm-thick silver nanocube at the scattering angle of {approx}3 deg. We observed a characteristic contrast of the coherent diffraction pattern due to only the thickness effect and collected the diffraction patterns at nine incident angles so as to obtain information on a cross section of Fourier space. We reconstructed a pure projection image by the iterative phasing method from the patched diffraction pattern. The edge resolution of the reconstructed image was {approx}2 nm, which was the highest resolution so far achieved by x-ray microscopy. The present study provides us with a method for quantitatively observing thick samples at high resolution by hard x-ray diffraction microscopy.

  3. Orientations of Diblock Copolymer Microdomains at Different Film Thicknesses

    NASA Astrophysics Data System (ADS)

    Chaikin, Paul; Park, Miri; Harrison, Christopher; Register, Richard; Adamson, Doug

    1996-03-01

    We prepared films with a range of thicknesses (50-300 nm) of a styrene-butadiene diblock copolymer, synthesized to produce a cylindrical morphology. Solutions of different polymer concentrations in toluene were spun onto carbon-coated glass slides. The films were then placed onto a Transmission Electron Microscope (TEM) grid by water lift-off, annealed, stained with osmium tetraoxide, and examined with a TEM. Over a wide range of film thicknesses, the cylinders lie parallel to the substrate. We present preliminary results that show a cylinder orientation perpendicular to the substrate at a thickness of many microdomain spacings. We speculate that the alignment mechanism is different from that found in a previous study of Kraton D1102(M. A. van Dijk and R. van den Berg, Macromolecules 28), 6773 (1995) which shows a perpendicular orientation with spin-coated films, but for a film thickness between one and two microdomain spacings. This work was supported by the NSF under DMR 9400362.

  4. Characterization of a nanometer-thick sputtered polytetrafluoroethylene film

    NASA Astrophysics Data System (ADS)

    Li, Lei; Jones, Paul M.; Hsia, Yiao-Tee

    2011-02-01

    Fast growth of nanotechnology, e.g. hard disk drive (HDD) and microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), requires nanometer-thick protection films with high thermal stability and low surface energy. In this paper, we report the characterization results of a nanometer-thick sputtered polytetrafluoroethylene (PTFE) film prepared by radio frequency (RF) sputtering. Atomic force microscopy (AFM) and X-ray reflectivity (XRR) results show that the nanometer-thick sputtered PTFE film has good uniformity. Thermally programmed desorption (TPD) results show that the film is thermally stable up to 430 °C. Surface energy measurement via contact angle method shows that the film has low surface energy with the thickness as low as 1.5 nm. X-ray photoelectron spectroscopy (XPS) data suggests that the film has crosslinked molecular structure, which results in amorphous morphology as shown by X-ray diffraction (XRD) data. Nano-indentation testing shows that the sputtered film has higher hardness and modulus than bulk PTFE. The structure-property relationship has been discussed.

  5. Catalytic hydrodechlorination of 1,2-dichloroethane using copper nanoparticles under reduction conditions of sodium borohydride.

    PubMed

    Huang, Chang-Chieh; Lo, Shang-Lien; Tsai, Shin-Mu; Lien, Hsing-Lung

    2011-09-01

    1,2-Dichloroethane (1,2-DCA) is a raw material used for the manufacture of vinyl chloride monomer (VCM) and therefore has very often been detected in the groundwater nearby the VCM manufacturing plant. Zero-valent iron (ZVI) is capable of degrading a wide array of highly chlorinated contaminants; however, the reactivity of ZVI towards 1,2-DCA is very low. In this study, zero-valent copper nanoparticles have been synthesized for effective dechlorination of 1,2-DCA under reduction conditions of sodium borohydride. Copper nanoparticles consisted of mainly metallic copper (Cu(0)) with small amounts of cuprous oxide (Cu(2)O). They have surface areas of about 19.0 m(2) g(-1) and an average diameter of 15 nm. Batch experiments were conducted to test the effectiveness of copper nanoparticles for 1,2-DCA degradation using sodium borohydride as electron donors where the ORP was measured as -1100 mV. More than 80% of 1,2-DCA (30 mg L(-1)) was rapidly degraded within 2 h in the presence of both copper nanoparticles (2.5 g L(-1)) and borohydride (25 mM). No reduction of 1,2-DCA was observed when the system contained either copper nanoparticles alone or borohydride alone. The degradation intermediates included ethane and ethylene accounting for 79% and ∼1.5% of the 1,2-DCA lost, respectively. Potential environmental applications can be achieved by immobilizing copper nanoparticles onto the surface of reducing metals to form a reactive bimetallic structure. PMID:21850296

  6. Compression behaviour of thick vertically aligned carbon nanotube blocks.

    PubMed

    Pavese, Matteo; Musso, Simone; Pugno, Nicola M

    2010-07-01

    Blocks of vertically aligned multiwall carbon nanotubes were prepared by thermal chemical vapor deposition starting from camphor and ferrocene precursors. The blocks, having a thickness of approximately 2 mm and composed of nanotubes with diameter ranging between 30 and 80 nm, were submitted to compression tests. The results were analyzed accordingly with a simple model consisting in a parallel array of nanotubes under compression and bending suffering microscopic instability and compaction. The model mostly fits the experimental stress-strain curves, with a small deviation attributed to dissipative phenomena, such as frictional forces and nanotube wall breakage. PMID:21128406

  7. First size-dependent growth rate measurements of 1 to 5 nm freshly formed atmospheric nuclei

    NASA Astrophysics Data System (ADS)

    Kuang, C.; Chen, M.; Zhao, J.; Smith, J.; McMurry, P. H.; Wang, J.

    2011-09-01

    This study presents the first measurements of size-dependent particle diameter growth rates for freshly nucleated particles down to 1 nm geometric diameter. Data analysis methods were developed, de-coupling the size and time-dependence of particle growth rates by fitting the aerosol general dynamic equation to size distributions obtained at an instant in time. Size distributions of freshly nucleated particles were measured during two intensive measurement campaigns in different environments (Atlanta, GA and Boulder, CO) using a recently developed electrical mobility spectrometer with a diethylene glycol-based ultrafine condensation particle counter as the detector. Size and time-dependent growth rates were obtained directly from measured size distributions and were found to increase approximately linearly with size from ~1 to 3 nm geometric diameter, ranging, for example, from 5.6 ± 2.0 to 27 ± 5.3 nm h-1 in Boulder (13:00) and from 5.5 ± 0.82 to 7.6 ± 0.56 nm h-1 in Atlanta (13:00). The resulting growth rate enhancement Γ, defined as the ratio of the observed growth rate to the growth rate due to the condensation of sulfuric acid only, was found to increase approximately linearly with size from ~1 to 3 nm geometric diameter, having lower limit values that approached ~1 at 1.2 nm geometric diameter in Atlanta and ~3 at 0.8 nm geometric diameter in Boulder, and having upper limit values that reached 8.3 at 4.1 nm geometric diameter in Atlanta and 25 at 2.7 nm geometric diameter in Boulder. Survival probability calculations comparing constant and size-dependent growth indicate that neglecting the strong growth rate size dependence from 1 to 3 nm observed in this study could lead to a significant overestimation of CCN survival probability.

  8. Spectroscopy of Pluto, 380-930 Nm at Six Longitudes

    NASA Technical Reports Server (NTRS)

    Cruikshank, D. P.; Pinilla-Alonso, N.; Lorenzi, V.; Grundy, William; Licandro, J.; Binzel, R. P.

    2014-01-01

    We have obtained spectra of the Pluto-Charon pair (unresolved) in the wavelength range 380-930 nm with resolution approx..450 at six roughly equally spaced longitudes. The data were taken in May and June, 2014, with the 4.2-m Isaac Newton Telescope at Roque de Los Muchachos Observatory in the Canary Islands, using the ACAM (auxiliary-port camera) in spectrometer mode, and using two solar analog stars. The new spectra clearly show absorption bands of solid CH4 at 620, 728, and 850-910 nm, which were known from earlier work. The 620-nm CH4 band is intrinsically very weak, and its appearance indicates a long optical path-length through the ice. This is especially true if it arises from CH4 dissolved in N2 ice. Earlier work (Owen et al. Science 261, 745, 1993) on the near-infrared spectrum of Pluto (1-2.5 microns) has shown that the CH4 bands are shifted to shorter wavelengths because the CH4 occurs as a solute in beta-phase crystalline N2. The optical path-length through the N2 crystals must be on the order of several cm to produce the N2 band observed at 2.15 microns. The new spectra exhibit a pronounced red slope across the entire wavelength range; the slope is variable with longitude, and differs in a small but significant way from that measured at comparable longitudes by Grundy & Fink (Icarus 124, 329, 1996) in their 15-year study of Pluto's spectrum (500-1000 nm). The new spectra will provide an independent means for calibrating the color filter bands on the Multispectral Visible Imaging Camera (MVIC) (Reuter et al. Space Sci. Rev. 140, 129, 2008) on the New Horizons spacecraft, which will encounter the Pluto-Charon system in mid-2015. They will also form the basis of modeling the spectrum of Pluto at different longitudes to help establish the nature of the non-ice component(s) of Pluto's surface. It is presumed that the non-ice component is the source of the yellow-red coloration of Pluto, which is known to be variable across the surface.

  9. Spectroscopy of Pluto at six longitudes, 380-930 nm

    NASA Astrophysics Data System (ADS)

    Cruikshank, Dale P.; Pinilla-Alonso, Noemi; Lorenzi, Vania; Grundy, Will M.; Licandro, Javier; Binzel, Richard P.

    2014-11-01

    We have obtained spectra of the Pluto-Charon pair (unresolved) in the wavelength range 380-930 nm with resolution ~450 at six roughly equally spaced longitudes. The data were taken in May and June, 2014, with the 4.2-m Isaac Newton Telescope at Roque de Los Muchachos Observatory in the Canary Islands, using the ACAM (auxiliary-port camera) in spectrometer mode, and using two solar analog stars. The new spectra clearly show absorption bands of solid CH4 at 620, 728, and 850-910 nm, which were known from earlier work. The 620-nm CH4 band is intrinsically very weak, and its appearance indicates a long optical pathlength through the ice. This is especially true if it arises from CH4 dissolved in N2 ice. Earlier work (Owen et al. Science 261, 745, 1993) on the near-infrared spectrum of Pluto (1-2.5 µm) has shown that the CH4 bands are shifted to shorter wavelengths because the CH4 occurs as a solute in beta-phase crystalline N2. The optical pathlength through the N2 crystals must be on the order of several cm to produce the N2 band observed at 2.15 µm. The new spectra exhibit a pronounced red slope across the entire wavelength range; the slope is variable with longitude, and differs in a small but significant way from that measured at comparable longitudes by Grundy & Fink (Icarus 124, 329, 1996) in their 15-year study of Pluto’s spectrum (500-1000 nm). The new spectra will provide an independent means for calibrating the color filter bands on the Multispectral Visible Imaging Camera (MVIC) (Reuter et al. Space Sci. Rev. 140, 129, 2008) on the New Horizons spacecraft, which will encounter the Pluto-Charon system in mid-2015. They will also form the basis of modeling the spectrum of Pluto at different longitudes to help establish the nature of the non-ice component(s) of Pluto’s surface. It is presumed that the non-ice component is the source of the yellow-red coloration of Pluto, which is known to be variable across the surface.

  10. Scaling of laser-induced contamination growth at 266nm and 355nm

    NASA Astrophysics Data System (ADS)

    Ließmann, M.; Jensen, L.; Balasa, I.; Hunnekuhl, M.; Büttner, A.; Weßels, P.; Neumann, J.; Ristau, D.

    2015-11-01

    The growth of laser-induced contamination (LIC) on optical components in extraterrestrial missions is a known issue especially for the UV spectral region. The Laser Zentrum Hannover e.V. is responsible for the development of a pulsed laser-system operating at a wavelength of 266 nm for the ExoMars mission and for the qualification of used optics and materials regarding LIC. In this context, toluene was utilized which is an often used model contaminant in LIC studies. Test cycles based on the application of the two UV wavelengths 355 nm and 266 nm on fused silica substrates and ARcoated optics are conducted and the observed contamination effects are compared. This scaling allows for a rough estimate of the destructive influence of LIC on space optics degradation at 266 nm. Further tests will be performed with materials integrated into the ExoMars-laser-head under near-operation environmental conditions.

  11. An 885-nm Direct Pumped Nd:CNGG 1061 nm Q-Switched Laser

    NASA Astrophysics Data System (ADS)

    Li, Qi-Nan; Zhang, Tao; Feng, Bao-Hua; Zhang, Zhi-Guo; Zhang, Huai-Jin; Wang, Ji-Yang

    2014-07-01

    The 885 nm direct pumping method, directly into the 4F3/2 emitting level of Nd3+ ion, is used to a Nd:CNGG crystal to product passive Q-switched 1061 nm laser pulses, for the first time to the best of our knowledge. A maximum average output power of 1.16 W for 1061 nm Q-switched pulses and a repetition rate of 12.54 kHz are obtained. The pulse width is measured to be 24 ns and the peak power is 3.843 kW. A high-quality fundamental transverse mode can be observed owing to the reduction of the thermal effect for Nd:CNGG crystal by 885 nm direct pumping.

  12. 43 CFR 4170.1-2 - Failure to use.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 43 Public Lands: Interior 2 2014-10-01 2014-10-01 false Failure to use. 4170.1-2 Section 4170.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT... § 4170.1-2 Failure to use. If a permittee or lessee has, for 2 consecutive grazing fee years, failed...

  13. 43 CFR 4170.1-2 - Failure to use.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 43 Public Lands: Interior 2 2013-10-01 2013-10-01 false Failure to use. 4170.1-2 Section 4170.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT... § 4170.1-2 Failure to use. If a permittee or lessee has, for 2 consecutive grazing fee years, failed...

  14. 43 CFR 4170.1-2 - Failure to use.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 43 Public Lands: Interior 2 2011-10-01 2011-10-01 false Failure to use. 4170.1-2 Section 4170.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT... § 4170.1-2 Failure to use. If a permittee or lessee has, for 2 consecutive grazing fee years, failed...

  15. 43 CFR § 2812.1-2 - Contents.

    Code of Federal Regulations, 2011 CFR

    2015-10-01

    ... 43 Public Lands: Interior 2 2015-10-01 2015-10-01 false Contents. § 2812.1-2 Section § 2812.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT... Coos Bay Revested Lands § 2812.1-2 Contents. (a) An individual applicant and each member of...

  16. Acyl migration kinetics of vegetable oil 1,2-diacylglycerols

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The acyl migration kinetics of long-chain 1,2-diacylglycerol (1,2-DAG) to form 1,3-diacylglycerol (1,3-DAG) over the temperature range of 25 to 80 degrees Celsius were examined using proton NMR spectroscopy. The 1,2-DAG mole fraction of 0.32 at equilibrium was found to be insensitive to temperature...

  17. 43 CFR 8365.1-2 - Occupancy and use.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 43 Public Lands: Interior 2 2013-10-01 2013-10-01 false Occupancy and use. 8365.1-2 Section 8365.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT OF THE INTERIOR RECREATION PROGRAMS VISITOR SERVICES Rules of Conduct § 8365.1-2 Occupancy and...

  18. 43 CFR 1784.1-2 - Duration, termination, and renewal.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 43 Public Lands: Interior 2 2014-10-01 2014-10-01 false Duration, termination, and renewal. 1784.1-2 Section 1784.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT OF THE INTERIOR GENERAL MANAGEMENT (1000) COOPERATIVE RELATIONS Advisory Committees § 1784.1-2 Duration,...

  19. 43 CFR 8365.1-2 - Occupancy and use.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 43 Public Lands: Interior 2 2011-10-01 2011-10-01 false Occupancy and use. 8365.1-2 Section 8365.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT, DEPARTMENT OF THE INTERIOR RECREATION PROGRAMS VISITOR SERVICES Rules of Conduct § 8365.1-2 Occupancy and...

  20. 26 CFR 1.1-2 - Limitation on tax.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 26 Internal Revenue 1 2011-04-01 2009-04-01 true Limitation on tax. 1.1-2 Section 1.1-2 Internal... Surtaxes § 1.1-2 Limitation on tax. (a) Taxable years ending before January 1, 1971. For taxable years ending before January 1, 1971, the tax imposed by section 1 (whether by subsection (a) or subsection...

  1. 43 CFR 4170.1-2 - Failure to use.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 43 Public Lands: Interior 2 2012-10-01 2012-10-01 false Failure to use. 4170.1-2 Section 4170.1-2 Public Lands: Interior Regulations Relating to Public Lands (Continued) BUREAU OF LAND MANAGEMENT... § 4170.1-2 Failure to use. If a permittee or lessee has, for 2 consecutive grazing fee years, failed...

  2. 36 CFR 1.2 - Applicability and scope.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 36 Parks, Forests, and Public Property 1 2011-07-01 2011-07-01 false Applicability and scope. 1.2 Section 1.2 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR GENERAL PROVISIONS § 1.2 Applicability and scope. (a) The regulations contained in this chapter apply to all...

  3. 36 CFR 1.2 - Applicability and scope.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 36 Parks, Forests, and Public Property 1 2014-07-01 2014-07-01 false Applicability and scope. 1.2 Section 1.2 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR GENERAL PROVISIONS § 1.2 Applicability and scope. (a) The regulations contained in this chapter apply to all...

  4. 36 CFR 1.2 - Applicability and scope.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 36 Parks, Forests, and Public Property 1 2012-07-01 2012-07-01 false Applicability and scope. 1.2 Section 1.2 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR GENERAL PROVISIONS § 1.2 Applicability and scope. (a) The regulations contained in this chapter apply to all persons entering, using, visiting,...

  5. 45 CFR 1216.1-2 - Applicability of this part.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 45 Public Welfare 4 2013-10-01 2013-10-01 false Applicability of this part. 1216.1-2 Section 1216.1-2 Public Welfare Regulations Relating to Public Welfare (Continued) CORPORATION FOR NATIONAL AND COMMUNITY SERVICE NONDISPLACEMENT OF EMPLOYED WORKERS AND NONIMPAIRMENT OF CONTRACTS FOR SERVICE § 1216.1-2 Applicability of this part. (a)...

  6. 1064 nm Nd:YAG laser intracavity pumped at 946 nm and sum-frequency mixing for an emission at 501 nm

    NASA Astrophysics Data System (ADS)

    Lü, Y. F.; Zhang, X. H.; Xia, J.; Jin, G. Y.; Wang, J. G.; Yin, X. D.; Zhang, A. F.

    2010-05-01

    We present for the first time a Nd:YAG laser emitting at 1064 nm intracavity pumped by a 946 nm diode-pumped Nd:YAG laser. A 809 nm laser diode is used to pump the first Nd:YAG crystal emitting at 946 nm, and the second Nd:YAG laser emitting at 1064 nm intracavity pumped at 946 nm. Intracavity sum-frequency mixing at 946 and 1064 nm was then realized in a LBO crystal to reach the cyan range. We obtained a continuous-wave output power of 485 mW at 501 nm with a pump laser diode emitting 25.4 W at 809 nm.

  7. High Temperature Superconducting Thick Films

    DOEpatents

    Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

    2005-08-23

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

  8. Thickness dependence of dielectric loss in SrTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Li, Hong-Cheng; Si, Weidong; West, Alexander D.; Xi, X. X.

    1998-07-01

    We have measured the dielectric loss in SrTiO3 thin films grown on SrRuO3 electrode layers with thickness ranging from 25 nm to 2.5 μm. The loss depends strongly on the thickness but differently above and below T≈80 K: as the thickness increases, the loss decreases at high temperatures but becomes higher at low temperatures. Our result suggests that, in the high temperature regime, the interfacial dead layer effect dominates while, in the low temperature regime, the losses related to the structural phase transition and quantum fluctuations are important.

  9. First-principles study of the critical thickness in asymmetric ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Cai, Meng-Qiu; Du, Yong; Huang, Bo-Yun

    2011-03-01

    The absent critical thickness of fully relaxed asymmetric ferroelectric tunnel junctions is investigated by first-principles calculations. The results show that PbTiO3 thin film between Pt and SrRuO3 electrodes can still retain a significant and stable polarization down to thicknesses as small as 0.8 nm, quite unlike the case of symmetric ferroelectric tunnel junctions. We trace this surprising result to the generation of a large electric field by the charge transfer between the electrodes caused by their different electronic environments, which acts against the depolarization field and enhances the ferroelectricity, leading to the reduction, or even complete elimination, for the critical thickness.

  10. Correlation of CsK{sub 2}Sb photocathode lifetime with antimony thickness

    SciTech Connect

    Mamun, M. A. Elmustafa, A. A.; Hernandez-Garcia, C.; Poelker, M.

    2015-06-01

    CsK{sub 2}Sb photocathodes with quantum efficiency on the order of 10% at 532 nm, and lifetime greater than 90 days at low voltage, were successfully manufactured via co-deposition of alkali species emanating from an effusion source. Photocathodes were characterized as a function of antimony layer thickness and alkali consumption, inside a vacuum chamber that was initially baked, but frequently vented without re-baking. Photocathode lifetime measured at low voltage is correlated with the antimony layer thickness. Photocathodes manufactured with comparatively thick antimony layers exhibited the best lifetime. We speculate that the antimony layer serves as a reservoir, or sponge, for the alkali.

  11. Correlation of CsK2Sb photocathode lifetime with antimony thickness

    SciTech Connect

    Mamun, M. A.; Hernandez-Garcia, C.; Poelker, M.; Elmustafa, A. A.

    2015-06-01

    CsK2Sb photocathodes with quantum efficiency on the order of 10% at 532 nm, and lifetime greater than 90 days at low voltage, were successfully manufactured via co-deposition of alkali species emanating from an effusion source. Photocathodes were characterized as a function of antimony layer thickness and alkali consumption, inside a vacuum chamber that was initially baked, but frequently vented without re-baking. Photocathode lifetime measured at low voltage is correlated with the antimony layer thickness. Photocathodes manufactured with comparatively thick antimony layers exhibited the best lifetime. We speculate that the antimony layer serves as a reservoir, or sponge, for the alkali.

  12. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    NASA Astrophysics Data System (ADS)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  13. [The Effects of Skin Thickness on Optical Transmission Characteristics in Fruits Tissues].

    PubMed

    Shi, Shu-ning; Tan, Zuo-jun; Xie, Jing; Lu, Jun

    2015-07-01

    Fruit quality inspection techniques play a very important role in the production and consumption of fruits. In the field of quality non-destructive inspection and grading for fruits, the light-based techniques using optical properties of fruit products were widely used as one of the most practical and the most successful techniques. Quantitative understanding of light interaction with fruits is critical to designing better optical systems for inspection of food quality. In this paper, a fruit model consisted of two layer tissues was developed using Monte Carlo simulations to explore the light transport process and properties in the pome fruits, such as apples and mandarins, which were used as the thin-skinned and thick-skinned fruits respectively. The simulation results obtained are based on the assumption that the light source is a Gaussian beam at the wavelength 808 nm. This paper reports that the effects of skin thickness on light transmission characteristics in fruit tissues, including diffuse reflectance, transmittance, absorptivity, penetration depth etc. The inspection efficiency of flesh tissues was also demonstrated. The results indicated that the transmittance and the penetration depth decreases with the fruit skin increasing. As for the absorbed energy density, the fruit skin tissues have the wider distribution at the radial distance than the fruit flesh tissues. The absorbed energy density always tended to decrease with the inside depth of the fruit tissues increasing, especially decreased more apparently at the radial direction. The diffuse reflectance at the radial distance from 0.2 to 1.2 cm decreased with the decreasing of fruit skin, however it showed the inverse relationship in the radial distance range from 1.2 to 4.0 cm, the diffuse reflectance decreases with the increasing fruit skin. This paper proposed that the interaction between light and fruits skin in transmission or reflective approach, should be considered for developing optical

  14. Fluorinated dissolution inhibitors for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Hamad, Alyssandrea H.; Bae, Young C.; Liu, Xiang-Qian; Ober, Christopher K.; Houlihan, Francis M.; Dabbagh, Gary; Novembre, Anthony E.

    2002-07-01

    Fluorinated dissolution inhibitors (DIs) for 157 nm lithography were designed and synthesized as part of an ongoing study on the structure/property relationships of photoresist additives. The problem of volatilization of small DI candidates was observed from matrices such as poly(methyl methacrylate) (PMMA) and poly(hexafluorohydroxy-isopropyl styrene) (PHFHIPS) during post-apply bake cycles using Fourier Transform Infrared Spectroscopy (FT-IR). To avoid this problem, low volatility fluorinated inhibitors were designed and synthesized. Three fluorinated DIs, perfluorosuberic acid bis-(2,2,2,-trifluoro-1-phenyl-1-trifluoromethyl-ethyl) ester (PFSE1), perfluorosuberic acid bis-[1-(4-trifluoromethyl-phenyl)-ethyl] ester (PFSE2) and a fluorinated phenylmethanediol diester (FPMD1), largely remained in a PHFHIPS film during the post-apply bake. The dissolution behavior of the two fluorinated diesters was studied and found to slow down the dissolution rate of PHFHIPS with inhibition factors of 1.9 and 1.6, respectively. The absorbance of PHFHIPS films containing 10 wt% of the diester inhibitors is 3.6 AU/micron compared with an absorbance of 3.3 AU/micron for the polymer itself. The absorbance of 10% FPMD1 in PHFHIPS was measured as 3.5 AU/micron compared with an absorbance of 3.4 AU/micron for the polymer itself. Thus, the non-volatility and transparency of the fluorinated inhibitors at 157 nm as well as their ability to reduce the development rate of fluorinated polymers make them suitable for use in a 157 nm resist system.

  15. Amputee Socks: Thickness of Multiple Socks

    PubMed Central

    Cagle, John C; Yu, Alan J; Ciol, Marcia A; Sanders, JE

    2015-01-01

    Background and Aim It is unclear how total sock ply and thickness are related when more than one sock is worn. The objectives were to determine if the thickness of one multi-ply amputee sock of ply P was the same as the thickness of a stack of reduced-ply socks of total ply P; and if the thickness of N single socks stacked one on top of the other was equal to the sum (1 to N) of the single sock thicknesses. Technique Using a custom instrument, compressive stresses were applied while sock thickness was measured. Discussion The thickness of one multi-ply sock of ply P was typically less than the thickness of a stack of reduced-ply socks of total ply P. The thickness of N single socks stacked one on top of the other was approximately equal to the sum (1 to N) of the single sock thicknesses. Clinical Relevance Our findings suggest three 1-ply socks to be 20% greater in thickness than one 3-ply sock, and one 3-ply + two 1-ply socks to be 30% greater in thickness than one 5-ply sock. PMID:24240023

  16. Quantitative comparison of the OCT imaging depth at 1300 nm and 1600 nm

    PubMed Central

    Kodach, V. M.; Kalkman, J.; Faber, D. J.; van Leeuwen, T. G.

    2010-01-01

    One of the present challenges in optical coherence tomography (OCT) is the visualization of deeper structural morphology in biological tissues. Owing to a reduced scattering, a larger imaging depth can be achieved by using longer wavelengths. In this work, we analyze the OCT imaging depth at wavelengths around 1300 nm and 1600 nm by comparing the scattering coefficient and OCT imaging depth for a range of Intralipid concentrations at constant water content. We observe an enhanced OCT imaging depth for 1600 nm compared to 1300 nm for Intralipid concentrations larger than 4 vol.%. For higher Intralipid concentrations, the imaging depth enhancement reaches 30%. The ratio of scattering coefficients at the two wavelengths is constant over a large range of scattering coefficients and corresponds to a scattering power of 2.8 ± 0.1. Based on our results we expect for biological tissues an increase of the OCT imaging depth at 1600 nm compared to 1300 nm for samples with high scattering power and low water content. PMID:21258456

  17. X-1-2 on ramp with Boeing B-29

    NASA Technical Reports Server (NTRS)

    1949-01-01

    The Bell Aircraft Corporation X-1-2 Sitting on the ramp at NACA High-Speed Flight Research Station with the Boeing B-29 launch ship behind. The painting near the nose of the B-29 depicts a stork carrying a bundle which is symbolic of the Mothership launching her babe (X-1-2). The pilot access door is open to the cockpit of the X-1-2 aircraft. On the X-1-2's fin is the old NACA shield, which was later replaced with a yellow band and the letters 'NACA' plus wings that were both black. There were four versions of the Bell X-1 rocket-powered research aircraft that flew at the NACA High-Speed Flight Research Station, Edwards, California. The bullet-shaped X-1 aircraft were built by Bell Aircraft Corporation, Buffalo, N.Y. for the U.S. Army Air Forces (after 1947, U.S. Air Force) and the National Advisory Committee for Aeronautics (NACA). The X-1 Program was originally designated the XS-1 for EXperimental Sonic. The X-1's mission was to investigate the transonic speed range (speeds from just below to just above the speed of sound) and, if possible, to break the 'sound barrier.' Three different X-1s were built and designated: X-1-1, X-1-2 (later modified to become the X-1E), and X-1-3. The basic X-1 aircraft were flown by a large number of different pilots from 1946 to 1951. The X-1 Program not only proved that humans could go beyond the speed of sound, it reinforced the understanding that technological barriers could be overcome. The X-1s pioneered many structural and aerodynamic advances including extremely thin, yet extremely strong wing sections; supersonic fuselage configurations; control system requirements; powerplant compatibility; and cockpit environments. The X-1 aircraft were the first transonic-capable aircraft to use an all-moving stabilizer. The flights of the X-1s opened up a new era in aviation. The first X-1 was air-launched unpowered from a Boeing B-29 Superfortress on Jan. 25, 1946. Powered flights began in December 1946. On Oct. 14, 1947, the X-1

  18. Near infrared imaging of teeth at wavelengths between 1200 and 1600 nm

    NASA Astrophysics Data System (ADS)

    Chung, Soojeong; Fried, Daniel; Staninec, Michal; Darling, Cynthia L.

    2011-03-01

    Near-IR (NIR) imaging is a new technology that is currently being investigated for the detection and assessment of dental caries without the use of ionizing radiation. Several papers have been published on the use of transillumination and reflectance NIR imaging to detect early caries in enamel. The purpose of this study was to investigate alternative near infrared wavelengths besides 1300-nm in the range from 1200- 1600-nm to determine the wavelengths that yield the highest contrast in both transmission and reflectance imaging modes. Artificial lesions were created on thirty tooth sections of varying thickness for transillumination imaging. NIR images at wavelengths from the visible to 1600-nm were also acquired for fifty-four whole teeth with occlusal lesions using a tungsten halogen lamp with several spectral filters and a Ge-enhanced CMOS image sensor. Cavity preparations were also cut into whole teeth and Z250 composite was used as a restorative material to determine the contrast between composite and enamel at NIR wavelengths. Slightly longer NIR wavelengths are likely to have better performance for the transillumination of occlusal caries lesions while 1300-nm appears best for the transillumination of proximal surfaces. Significantly higher performance was attained at wavelengths that have higher water absorption, namely 1460-nm and wavelengths greater than 1500-nm and these wavelength regions are likely to be more effective for reflectance imaging. Wavelengths with higher water absorption also provided higher contrast of composite restorations.

  19. Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

    NASA Astrophysics Data System (ADS)

    Pargon, E.; Menguelti, K.; Martin, M.; Bazin, A.; Chaix-Pluchery, O.; Sourd, C.; Derrough, S.; Lill, T.; Joubert, O.

    2009-05-01

    In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to the so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, and ellipsometry). By using windows with different cutoff wavelengths patched on the photoresist film, the role of the plasma vacuum ultraviolet (VUV) light on the resist modifications is clearly outlined and distinguished from the role of radicals and ions from the plasma. The analyses reveal that both plasma cure treatments induce severe surface and bulk chemical modifications of the resist films. The synergistic effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm), while the plasma VUV light (110-210 nm) is clearly identified as being responsible for ester and lactone group removal from the resist bulk. As the resist modification depth depends strongly on the wavelength penetration into the material, it is found that HBr plasma cure that emits near 160-170 nm can chemically modify the photoresist through its entire thickness (240 nm), while the impact of Ar plasmas emitting near 100 nm is more limited. In the case of HBr cure treatment, Raman and ellipsometry analyses reveal the formation of sp2 carbon atoms in the resist bulk, certainly thanks to hydrogen diffusion through the resist film assisted by the VUV plasma light.

  20. Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

    SciTech Connect

    Pargon, E.; Menguelti, K.; Martin, M.; Bazin, A.; Joubert, O.; Lill, T.

    2009-05-01

    In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to the so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, and ellipsometry). By using windows with different cutoff wavelengths patched on the photoresist film, the role of the plasma vacuum ultraviolet (VUV) light on the resist modifications is clearly outlined and distinguished from the role of radicals and ions from the plasma. The analyses reveal that both plasma cure treatments induce severe surface and bulk chemical modifications of the resist films. The synergistic effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm), while the plasma VUV light (110-210 nm) is clearly identified as being responsible for ester and lactone group removal from the resist bulk. As the resist modification depth depends strongly on the wavelength penetration into the material, it is found that HBr plasma cure that emits near 160-170 nm can chemically modify the photoresist through its entire thickness (240 nm), while the impact of Ar plasmas emitting near 100 nm is more limited. In the case of HBr cure treatment, Raman and ellipsometry analyses reveal the formation of sp{sup 2} carbon atoms in the resist bulk, certainly thanks to hydrogen diffusion through the resist film assisted by the VUV plasma light.

  1. Thickness-Dependent Structural and Optoelectronic Properties of In2O3 Films Prepared by Spray Pyrolysis Technique

    NASA Astrophysics Data System (ADS)

    Khan, M. A. Majeed; Khan, Wasi

    2016-08-01

    In this work, nanostructured In2O3 thin films with thickness in the range of 40-160 nm were deposited on glass substrates by the chemical spray pyrolysis technique. The microstructural, surface morphology and optical properties were investigated as a function of film thickness through x-ray diffraction, scanning electron microscopy equipped with energy dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, UV-visible spectroscopy and photoluminescence measurements. The x-ray diffraction analysis showed that the deposited films were polycrystalline in nature with a cubic structure having (222) as preferred orientation. The morphological analyses of the samples exhibited uniform and smooth surface of the films with systematical increments in the surface roughness with increasing film thickness. The grain size increased from 9 nm to 13 nm with increasing film thickness. Raman spectroscopy has been employed to study the crystalline quality and the structural disorder of the films. A blue-shift in the energy band gap ( E g) from 3.74 eV to 3.98 eV was observed with the increase of film thickness. Moreover, photoluminescence peaks of the In2O3 films appeared at 443 nm and 527 nm for all films. The thickness had a substantial influence on the microstructural and optical properties as well as on the luminescence intensity of the films. The strategy presented here indicates that the prepared films could be suitable candidates for optoelectronic device applications.

  2. Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields

    SciTech Connect

    Kaiju, H. Kasa, H.; Mori, S.; Misawa, T.; Abe, T.; Nishii, J.; Komine, T.

    2015-05-07

    We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96–1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10–20 nm can be expected to function as spin-filter devices.

  3. Thickness-Dependent Structural and Optoelectronic Properties of In2O3 Films Prepared by Spray Pyrolysis Technique

    NASA Astrophysics Data System (ADS)

    Khan, M. A. Majeed; Khan, Wasi

    2016-05-01

    In this work, nanostructured In2O3 thin films with thickness in the range of 40-160 nm were deposited on glass substrates by the chemical spray pyrolysis technique. The microstructural, surface morphology and optical properties were investigated as a function of film thickness through x-ray diffraction, scanning electron microscopy equipped with energy dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, UV-visible spectroscopy and photoluminescence measurements. The x-ray diffraction analysis showed that the deposited films were polycrystalline in nature with a cubic structure having (222) as preferred orientation. The morphological analyses of the samples exhibited uniform and smooth surface of the films with systematical increments in the surface roughness with increasing film thickness. The grain size increased from 9 nm to 13 nm with increasing film thickness. Raman spectroscopy has been employed to study the crystalline quality and the structural disorder of the films. A blue-shift in the energy band gap (E g) from 3.74 eV to 3.98 eV was observed with the increase of film thickness. Moreover, photoluminescence peaks of the In2O3 films appeared at 443 nm and 527 nm for all films. The thickness had a substantial influence on the microstructural and optical properties as well as on the luminescence intensity of the films. The strategy presented here indicates that the prepared films could be suitable candidates for optoelectronic device applications.

  4. Photolysis of formic acid at 355 nm

    NASA Astrophysics Data System (ADS)

    Martinez, Denhi; Bautista, Teonanacatl; Guerrero, Alfonso; Alvarez, Ignacio; Cisneros, Carmen

    2015-05-01

    Formic acid is well known as a food additive and recently an application on fuel cell technology has emerged. In this work we have studied the dissociative ionization process by multiphoton absorption of formic acid molecules at 355nm wavelength photons, using TOF spectrometry in reflectron mode (R-TOF). Some of the most abundant ionic fragments produced are studied at different settings of the laser harmonic generator. The dependence of the products on these conditions is reported. This work was supported by CONACYT Project 165410 and PAPIIT IN102613 and IN101215.

  5. 248nm silicon photoablation: Microstructuring basics

    NASA Astrophysics Data System (ADS)

    Poopalan, P.; Najamudin, S. H.; Wahab, Y.; Mazalan, M.

    2015-05-01

    248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.

  6. 248nm silicon photoablation: Microstructuring basics

    SciTech Connect

    Poopalan, P.; Najamudin, S. H.; Wahab, Y.; Mazalan, M.

    2015-05-15

    248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.

  7. 1.2-kW single-mode fiber laser based on 100-W high-brightness pump diodes

    NASA Astrophysics Data System (ADS)

    Yu, Hongbo; Kliner, Dahv A. V.; Liao, Kai-Hsiu; Segall, Jeff; Muendel, Martin H.; Morehead, James J.; Shen, Jane; Kutsuris, Matt; Luu, Johnny; Franke, Justin; Nguyen, Kelvin; Woods, Dave; Vance, Fred; Vecht, David; Meng, David; Duesterberg, Richard; Xu, Lei; Skidmore, Jay; Peters, Matthew; Guerin, Nicolas; Guo, James; Cheng, Jane; Du, Jihua; Johnson, Brad; Yin, Dongliang; Hsieh, Allen; Cheng, Peter; Demir, Abdullah; Cai, Jason; Gurram, Rupa; Lee, Kong-Weng; Raju, Reddy; Zou, Daniel; Srinivasan, Raman; Saini, Mandeep; Zavala, Laura; Rossin, Victor; Zucker, Erik P.; Ishiguro, Hiroaki; Sako, Hiroshi

    2012-02-01

    We have demonstrated a monolithic (fully fused), 1.2-kW, Yb-doped fiber laser with near-single-mode beam quality. This laser employs a new generation of high-brightness, fiber-coupled pump sources based on spatially multiplexed single emitters, with each pump providing 100 W at 915 nm within 0.15 NA from a standard 105/125 μm fiber. The fiber laser is end pumped through the high-reflector FBG using a 19:1 fused-fiber pump combiner, eliminating the need for pump/signal combiners. The output wavelength is 1080 nm, with a linewidth of < 0.5 nm FWHM. A peak power of 1.5 kW was reached in modulated operation (1-ms pulse duration) with M2 < 1.2.

  8. Direct Observation of the 6S1 / 2 to 5D3 / 2 Electric Quadrupole Transition in Barium-138

    NASA Astrophysics Data System (ADS)

    Kleczewski, Adam; Hoffman, Matt; Magnuson, Eric; Blinov, Boris; Fortson, Norval

    2011-05-01

    The 6S1 / 2 to 5D3 / 2 electric quadrupole transition at 2051 nm in Ba+ plays an important role in a number of proposed experiments.,, We present the results of the first narrow laser spectroscopy performed on this transition. 2051 nm light is generated by a diode pumped solid state Tm,Ho:YLF laser. The laser is frequency stabilized to a high finesse cavity made from ultra-low expansion glass. In order to take advantage of higher performing optics and detectors available at shorter wavelengths, the 2051 nm light is frequency doubled using a periodically poled lithium niobate crystal inside a bow-tie enhancement cavity before being sent to the reference cavity. Using this laser system we observed Rabi oscillations on the 6S1 / 2 to 5D3 / 2 transition and demonstrated a laser-ion coherence time of 3 ms. This work is supported by NSF Grant PHY-0906494.

  9. High thickness acrylamide photopolymer for peristrophic multiplexing

    NASA Astrophysics Data System (ADS)

    Ortuño, M.; Fernández, E.; Márquez, A.; Gallego, S.; Neipp, C.; Pascual, I.

    2006-05-01

    The acrylamide photolymers are considered interesting materials for holographic media. They have high diffraction efficiency (ratio of the intensities of the diffracted and the incident beams), an intermediate energetic sensitivity among other materials and post-processing steps are not necessary, therefore the media is not altered. The layers of these materials, about 1 mm thick, are a suitable media for recording many diffraction gratings in the same volume of photopolymer using peristrophic multiplexing technique, with great practical importance in the field of holographic memories type WORM (write once read many). In this work we study the recording of diffraction gratings by peristrophic multiplexing with axis of rotation perpendicular to the recording media. The photopolymer is composed of acrylamide as the polymerizable monomer, triethanolamine as radical generator, yellowish eosin as sensitizer and a binder of polyvinyl alcohol. We analyze the holographic behaviour of the material during recording and reconstruction of diffraction gratings using a continuous Nd:YAG laser (532 nm) at an intensity of 5 mW/cm2 as recording laser. The response of the material is monitored after recording with an He-Ne laser. We study the recording process of unslanted diffraction gratings of 1125 lines/mm. The diffraction efficiency of each hologram is seen to decrease as the number of holograms recorded increases, due to consumption of the available dynamic range, in a constant exposure scheduling. It can be seen that the photopolymer works well with high energy levels, without excessive dispersion of light by noise gratings. In order to homogenize the diffraction efficiency of each hologram we use the method proposed by Pu. This method is designed to share all or part of the avaliable dynamic range of the recording material among the holograms to be multiplexed. Using exposure schedules derived from this method we have used 3 scheduling recordings from the algorithm used

  10. 240 kW peak power at 266 nm in nonlinear YAl3(BO3)4 single crystal.

    PubMed

    Ilas, Simon; Loiseau, Pascal; Aka, Gérard; Taira, Takunori

    2014-12-01

    We report the fourth harmonic generation at 266 nm using a type I YAl3(BO3)4 (YAB) single crystal from a Q-switch microchip laser Nd:YAG/Cr⁴⁺:YAG frequency doubled with a LiB3O5 (LBO) crystal. 240 kW peak power at 266 nm corresponding to a mean conversion efficiency of 12.2% from 532 to 266 nm has been obtained with a 2.94 mm thick YAB crystal. The influences of optical homogeneity and absorption on the conversion efficiency are discussed. PMID:25606961

  11. 1085 nm Nd:YVO4 laser intracavity pumped at 914 nm and sum-frequency mixing to reach cyan laser at 496 nm

    NASA Astrophysics Data System (ADS)

    Lü, Y. F.; Xia, J.; Yin, X. D.; Wang, D.; Zhang, X. H.

    2010-01-01

    We present for the first time a Nd:YVO4 laser at 1085 nm intracavity pumped at 914 nm by a Nd:YVO4 laser. We obtained intracavity powers of 57 W at 914 nm and 62 W at 1085 nm. Using type-I critical phase-matching LiB3O5 (LBO) crystal, a cyan laser at 496 nm is obtained by 914 and 1085 nm intracavity sum-frequency mixing. The maximum laser output power of 142 mW is obtained when an incident pump laser of 19.6 W is used.

  12. The art of photomask materials for low-k1-193nm lithography

    NASA Astrophysics Data System (ADS)

    Hashimoto, Masahiro; Iwashita, Hiroyuki; Mitsui, Hideaki

    2009-04-01

    The resolution of photomask patterns were improved with a hardmask (HM) system. The system which is thin Sicompounds layer is easily etched by the hyper-thin resist (below 100nm thickness). The HM material has sufficient etching selectivity against the chrome-compounds which is the second layer chrome absorber for the phase-shifter. This hardmask layer has been completely removed during the phase-shifter etching. It means that the conventional phase-shit mask (PSM) has been made with the ultimately high-resolution without configuration changes. Below 50nm resolution of PSM was made with 90nm thickness resist on HM layer in this paper. The CD bias between a resist feature CD and a chrome feature CD was almost zero (below 1nm) in the optimized etching condition. We confirmed that the mask performances were the equal to COMS (Cr-HM on MoSi binary mask) in resolution and CD linearity. The performances of hardmask blanks will be defined by resist performance because of almost zero bias.

  13. Synthesis of WS2 Nanowires as Efficient 808 nm-Laser-Driven Photothermal Nanoagents.

    PubMed

    Macharia, Daniel K; Yu, Nuo; Zhong, Runzhi; Xiao, Zhiyin; Yang, Jianmao; Chen, Zhigang

    2016-06-01

    A prerequisite for the development of photothermal ablation therapy for cancer is to obtain efficient photothermal nanoagents that can be irradiated by near-infrared (NIR) laser. Herein, we have reported the synthesis of WS2 nanowires as photothermal nanoagents by the reaction of WCl6 with CS2 in oleylamine at 280 degrees C. WS2 nanowires have the thickness of -2 nm and length of -100 nm. Importantly, the chloroform dispersion of WS2 nanowires exhibits strong photoabsorption in NIR region. The temperature of the dispersion (0.10-0.50 mg/mL) can increase by 12.8-23.9 degrees C in 5 min under the irradiation of 808 nm laser with a power density of 0.80 W/cm2. Therefore, WS2 nanowires have a great superiority as a new nanoagent for NIR-induced photothermal ablation of cancer, due to their small size and excellent photothermal performance. PMID:27427645

  14. The Fabrication of Sub-5-nm Nanochannels in Insulating Substrates using Focused Ion Beam Milling

    PubMed Central

    Menard, Laurent D.; Ramsey, J. Michael

    2011-01-01

    The use of focused ion beam (FIB) milling to fabricate nanochannels with critical dimensions extending below 5 nm is described. FIB milled lines have narrowing widths as they are milled deeper into a substrate. This focusing characteristic is coupled with a two-layered architecture consisting of a relatively thick (>100 nm) metal film deposited onto a substrate. A channel is milled through the metal layer until it penetrates a prescribed depth into the substrate material. The metal is then removed, leaving a nanochannel with smooth surfaces and lateral dimensions as small as sub-5 nm. These open nanochannels can be sealed with a cover plate and the resulting devices are well-suited for single-molecule DNA transport studies. This methodology is used with quartz, single-crystal silicon, and polydimethylsiloxane substrates to demonstrate its general utility. PMID:21171628

  15. Synthesis of boron nitride coatings on quartz fibers: Thickness control and mechanism research

    NASA Astrophysics Data System (ADS)

    Zheng, Yu; Wang, Shubin

    2011-10-01

    Boron nitride (BN) coatings were successfully synthesized on quartz fibers by dip-coating in boric acid and urea solutions at 700 °C. The SEM micrographs indicated that the quartz fibers were fully covered by coatings with smooth surface. The XRD, FT-IR, XPS spectra and HR-TEM results showed that the composition of the coatings which combined closely with the quartz fibers was polycrystalline h-BN. By changing the dip circles, the coating thickness was well controlled. The thicknesses of samples dipped less than six circles increased linearly with dipping-circles; and the increment of coating thickness would slow down when the fibers were dipped 10 circles. After being dipped for 10 circles, the thickness was about 300 nm. The coating thickness was also established by calculation and the calculated results were consistent with the results measured by micrograph.

  16. Effect of film thickness on the antifouling performance of poly(hydroxy-functional methacrylates) grafted surfaces.

    PubMed

    Zhao, Chao; Li, Lingyan; Wang, Qiuming; Yu, Qiuming; Zheng, Jie

    2011-04-19

    The development of nonfouling biomaterials to prevent nonspecific protein adsorption and cell/bacterial adhesion is critical for many biomedical applications, such as antithrombogenic implants and biosensors. In this work, we polymerize two types of hydroxy-functional methacrylates monomers of 2-hydroxyethyl methacrylate (HEMA) and hydroxypropyl methacrylate (HPMA) into polymer brushes on the gold substrate via surface-initiated atom transfer radical polymerization (SI-ATRP). We systematically examine the effect of the film thickness of polyHEMA and polyHPMA brushes on their antifouling performance in a wide range of biological media including single-protein solution, both diluted and undiluted human blood serum and plasma, and bacteria culture. Surface plasmon resonance (SPR) results show a strong correlation between antifouling property and film thickness. Too thin or too thick polymer brushes lead to large protein adsorption. Surfaces with the appropriate film thickness of ∼25-45 nm for polyHPMA and ∼20-45 nm for polyHEMA can achieve almost zero protein adsorption (<0.3 ng/cm(2)) from single-protein solution and diluted human blood plasma and serum. For undiluted human blood serum and plasma, polyHEMA brushes at a film thickness of ∼20-30 nm adsorb only ∼3.0 and ∼3.5 ng/cm(2) proteins, respectively, while polyHPMA brushes at a film thickness of ∼30 nm adsorb more proteins of ∼13.5 and ∼50.0 ng/cm(2), respectively. Moreover, both polyHEMA and polyHPMA brushes with optimal film thickness exhibit very low bacteria adhesion. The excellent antifouling ability and long-term stability of polyHEMA and polyHPMA brushes make them, especially for polyHEMA, effective and stable antifouling materials for usage in blood-contacting devices. PMID:21405141

  17. On a mechanism of 1/2<110> and 1/2<112> dislocation pinning in {gamma}-TiAl

    SciTech Connect

    Inkson, B.J.

    1996-10-15

    A new mechanism for 1/2<110> and 1/2<112> dislocation pinning in TiAl is discussed. This mechanism is based on the inability of 1/2<110> perfect dislocations and 1/2<112> superdislocations to propagate through small {gamma} order-domains where the two {gamma}-grains are related by an order relationship equivalent to a 120{degree} rotation about <111>.

  18. Change of interface dipole energy with interfacial layer thickness and O2 plasma treatment in metal/organic interface

    NASA Astrophysics Data System (ADS)

    Kim, Soo Young; Hong, Kihyon; Lee, Jong-Lam

    2007-04-01

    The authors determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl using ultraviolet and synchrotron radiation photoemission spectroscopy. The interface dipole energy increased as a function of interfacial layer thickness up to 4nm. After O2 plasma treatment on thick-metal (>4nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (<2nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the O2 plasma treated thin (<2nm) interfacial layer reduced the hole injection barrier.

  19. 840 mW continuous-wave Fe:ZnSe laser operating at 4140 nm.

    PubMed

    Evans, Jonathan W; Berry, Patrick A; Schepler, Kenneth L

    2012-12-01

    We report the demonstration of high-power (840 mW) continuous-wave laser oscillation from Fe2+ ions in zinc selenide. The output spectrum of the Fe:ZnSe laser had a line-center near 4140 nm with a linewidth of 80 nm. The beam quality was measured to be M2≤1.2 with a maximum slope efficiency of 47%. Small shifts observed in output wavelength with increased output power were attributed to thermal effects. No thermal roll-off of slope efficiency was observed at the maximum of output power. PMID:23330210

  20. Electrically-pumped 850-nm micromirror VECSELs.

    SciTech Connect

    Geib, Kent Martin; Peake, Gregory Merwin; Serkland, Darwin Keith; Keeler, Gordon Arthur; Mar, Alan

    2005-02-01

    Vertical-external-cavity surface-emitting lasers (VECSELs) combine high optical power and good beam quality in a device with surface-normal output. In this paper, we describe the design and operating characteristics of an electrically-pumped VECSEL that employs a wafer-scale fabrication process and operates at 850 nm. A curved micromirror output coupler is heterogeneously integrated with AlGaAs-based semiconductor material to form a compact and robust device. The structure relies on flip-chip bonding the processed epitaxial material to an aluminum nitride mount; this heatsink both dissipates thermal energy and permits high frequency modulation using coplanar traces that lead to the VECSEL mesa. Backside emission is employed, and laser operation at 850 nm is made possible by removing the entire GaAs substrate through selective wet etching. While substrate removal eliminates absorptive losses, it simultaneously compromises laser performance by increasing series resistance and degrading the spatial uniformity of current injection. Several aspects of the VECSEL design help to mitigate these issues, including the use of a novel current-spreading n type distributed Bragg reflector (DBR). Additionally, VECSEL performance is improved through the use of a p-type DBR that is modified for low thermal resistance.

  1. Microstrip dipole antennas on electrically thick substrates

    NASA Astrophysics Data System (ADS)

    Jackson, D. R.; Alexopoulos, N. G.

    1985-10-01

    Printed circuit antennas are attractive radiation sources both at microwave and millimeter wave frequencies. However, for millimeter wave applications where the substrate is likely to be electrically thick, it is important to understand the basic effects of a thick substrate on radiation characteristics. In particular, it is concluded here that dipole radiation properties become sensitive to loss as the substrate becomes thick. Furthermore, the efficiency of dipoles on thick substrates tends to be low, especially as the dielectric constant of the substrate increases. A method of improving both the efficiency and gain can be used for thick substrates, however, which uses a superstrate layer on top of the antenna.

  2. Intelligent processing for thick composites

    NASA Astrophysics Data System (ADS)

    Shin, Daniel Dong-Ok

    2000-10-01

    Manufacturing thick composite parts are associated with adverse curing conditions such as large in-plane temperature gradient and exotherms. The condition is further aggravated because the manufacturer's cycle and the existing cure control systems do not adequately counter such affects. In response, the forecast-based thermal control system is developed to have better cure control for thick composites. Accurate cure kinetic model is crucial for correctly identifying the amount of heat generated for composite process simulation. A new technique for identifying cure parameters for Hercules AS4/3502 prepreg is presented by normalizing the DSC data. The cure kinetics is based on an autocatalytic model for the proposed method, which uses dynamic and isothermal DSC data to determine its parameters. Existing models are also used to determine kinetic parameters but rendered inadequate because of the material's temperature dependent final degree of cure. The model predictions determined from the new technique showed good agreement to both isothermal and dynamic DSC data. The final degree of cure was also in good agreement with experimental data. A realistic cure simulation model including bleeder ply analysis and compaction is validated with Hercules AS4/3501-6 based laminates. The nonsymmetrical temperature distribution resulting from the presence of bleeder plies agreed well to the model prediction. Some of the discrepancies in the predicted compaction behavior were attributed to inaccurate viscosity and permeability models. The temperature prediction was quite good for the 3cm laminate. The validated process simulation model along with cure kinetics model for AS4/3502 prepreg were integrated into the thermal control system. The 3cm Hercules AS4/3501-6 and AS4/3502 laminate were fabricated. The resulting cure cycles satisfied all imposed requirements by minimizing exotherms and temperature gradient. Although the duration of the cure cycles increased, such phenomena was

  3. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    SciTech Connect

    Wan, Yimao Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  4. Design and laser damage properties of a dichroic beam combiner coating for 22.5° incidence and S polarization with high-transmission at 527nm and high-reflection at 1054nm

    NASA Astrophysics Data System (ADS)

    Bellum, John C.; Field, Ella S.; Kletecka, Damon E.; Rambo, Patrick K.; Smith, Ian C.

    2015-11-01

    We have designed a dichroic beam combiner coating consisting of 11 HfO2/SiO2 layer pairs deposited on a large fused silica substrate. The coating provides high transmission (HT) at 527 nm and high reflection (HR) at 1054 nm for light at 22.5° angle of incidence (AOI) in air in S polarization (Spol). The coating's design is based on layers of near half-wave optical thickness in the design space for stable HT at 527 nm, with layer modifications that provide HR at 1054 nm while preserving HT at 527 nm. Its implementation in the 527 nm/1054 nm dual wavelength beam combiner arrangement has two options, with each option requiring one or the other of the high intensity beams to be incident on the dichroic coating from within the substrate (from glass). We show that there are differences between the two options with respect to the laser-induced damage threshold (LIDT) properties of the coating, and analyze the differences in terms of the 527 nm and 1054 nm E-field intensity behaviors for air --> coating and glass --> coating incidence. Our E-field analysis indicates that LIDTs for air --> coating incidence should be higher than for glass --> coating incidence. LIDT measurements for Spol at the use AOI with ns pulses at 532 nm and 1064 nm confirm this analysis with the LIDTs for glass --> coating incidence being about half those for air --> coating incidence at both wavelengths. These LIDT results and the E-field analysis clearly indicate that the best beam combiner option is the one for which the high intensity 527 nm beam is incident on the coating from air and the 1054 nm high intensity beam is incident on the coating from glass.

  5. 1-Amino-2-hydroxy-4-naphthalenesulfonic acid based Schiff bases or naphtho[1,2-d]oxazoles: selective synthesis and photophysical properties.

    PubMed

    Atahan, Alparslan; Durmus, Sefa

    2015-06-01

    A series of Schiff base and naphtho[1,2-d]oxazole derivatives were selectively synthesized via condensation reaction of 1-amino-2-hydroxy-4-naphthalenesulfonic acid and benzaldehyde derivatives at same conditions. The synthesized compounds were then characterized by using (1)HNMR, (13)CNMR, FTIR spectroscopies and elemental analyses. It was seen that the Schiff bases generated in the presence of OH group at ortho position of benzaldehyde derivatives. However, the products were naphtho[1,2-d]oxazoles in other cases. Then, the synthesized compounds were photophysically investigated by UV absorption and fluorescence emission spectroscopies. As a result, these Schiff bases have shown long wavelength absorption (λ(max): 386 nm) and emission (λ(max): 429-437 nm) effect while synthesized naphtho[1,2-d]oxazole derivatives have a set of absorption (λ(max): about 296, 308, 320 nm) and emission maxima (λ(max): 378-395 nm) at lower wavelength. PMID:25748593

  6. Effect of coating thickness of iron oxide nanoparticles on their relaxivity in the MRI

    PubMed Central

    Hajesmaeelzadeh, Farzaneh; Shanehsazzadeh, Saeed; Grüttner, Cordula; Daha, Fariba Johari; Oghabian, Mohammad Ali

    2016-01-01

    Objective(s): Iron oxide nanoparticles have found prevalent applications in various fields including drug delivery, cell separation and as contrast agents. Super paramagnetic iron oxide (SPIO) nanoparticles allow researchers and clinicians to enhance the tissue contrast of an area of interest by increasing the relaxation rate of water. In this study, we evaluate the dependency of hydrodynamic size of iron oxide nanoparticles coated with Polyethylene glycol (PEG) on their relativities with 3 Tesla clinical MRI. Materials and Methods: We used three groups of nanoparticles with nominal sizes 20, 50 and 100 nm with a core size of 8.86 nm, 8.69 nm and 10.4 nm that they were covered with PEG 300 and 600 Da. A clinical magnetic resonance scanner determines the T1 and T2 relaxation times for various concentrations of PEG-coated nanoparticles. Results: The size measurement by photon correlation spectroscopy showed the hydrodynamic sizes of MNPs with nominal 20, 50 and 100 nm with 70, 82 and 116 nm for particles with PEG 600 coating and 74, 93 and 100 nm for particles with PEG 300 coating, respectively. We foud that the relaxivity decreased with increasing overall particle size (via coating thickness). Magnetic resonance imaging showed that by increasing the size of the nanoparticles, r2/r1 increases linearly. Conclusion: According to the data obtained from this study it can be concluded that increments in coating thickness have more influence on relaxivities compared to the changes in core size of magnetic nanoparticles. PMID:27081461

  7. Pavement thickness evaluation using ground penetrating radar

    NASA Astrophysics Data System (ADS)

    Harris, Dwayne Arthur

    Accurate knowledge of pavement thickness is important information to have both at a network and project level. This information aids in pavement management and design. Much of the time this information is missing, out of date, or unknown for highway sections. Current technologies for determining pavement thickness are core drilling, falling weight deflectometer (FWD), and ground penetrating radar (GPR). Core drilling provides very accurate pin point pavement thickness information; however, it is also time consuming, labor intensive, intrusive to traffic, destructive, and limited in coverage. FWD provides nondestructive estimates of both a surface thickness and total pavement structure thickness, including pavement, base and sub-base. On the other hand, FWD is intrusive to traffic and affected by the limitations and assumptions the method used to estimate thickness. GPR provides pavement surface course thickness estimates with excellent data coverage at highway speed. Yet, disadvantages include the pavement thickness estimation being affected by the electrical properties of the pavement, limitations of the system utilized, and heavy post processing of the data. Nevertheless, GPR has been successfully utilized by a number of departments of transportation (DOTs) for pavement thickness evaluation. This research presents the GPR thickness evaluation methods, develops GPRPAVZ the software used to implement the methodologies, and addresses the quality of GPR pavement thickness evaluation.

  8. Thickness effect on HVOF coatings

    SciTech Connect

    Thorpe, R.

    1994-12-31

    Hobart/Tafa`s JP-5000`s particle velocity has a unique effect on coatings. This paper discusses the effect of thickness on coating properties such as: integrity, bond strength, stresses and coating performance. Much has been said about the advantages of these coatings. The goal of this paper if to provide additional substantiation. Higher operating pressure gun with high particle velocity yields coating properties that allow them to be applied thicker than ever before. the properties of these thicker coatings are evaluated versus micro-integrity, porosity, bond strength, oxide content and performance. Other comparisons are considered. Stresses in those coatings are a key part of this evaluation. Due to the unique coating stresses, corrosion and stress-corrosion resistance properties are improved. Also, mechanical and thermal fatigue properties are enhanced. A few case histories will be examined as documentation of actual field history. The types of applications involved are high and low temperature particle erosion; impact and sliding wear; immersion and heat corrosion; dimensional restoration of superalloys.

  9. Maskless pattern transfer using 355 nm laser

    NASA Astrophysics Data System (ADS)

    Gabran, S. R. I.; Mansour, R. R.; Salama, M. M. A.

    2012-05-01

    Low power near-ultraviolet laser can be employed in various pattern transfer techniques such as maskless lithography and organic film ablation. Laser maskless lithography allows rapid prototyping using thin as well as thick photoresist films. Non-photosensitive organic films can be patterned by laser ablation, and this technique is applied in creating micro-molds for metal deposition using electroplating and electroless deposition. This paper presents experimental results, a quantitative study and modeling of laser maskless processing using desktop Nd:YAG laser system using four different photoresists. Process variables were experimentally optimized to identify the appropriate laser parameters that would yield reliable and reproducible patterns. A finite element thermal model of the ablation process was created to investigate the effects of different substrate materials on the process quality.

  10. TCSPC FLIM in the wavelength range from 800 nm to 1700 nm (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Becker, Wolfgang; Shcheslavsky, Vladislav

    2016-03-01

    Excitation and detection in the wavelength range above 800nm is a convenient and relatively inexpensive way to increase the penetration depth in optical microscopy. Moreover, detection at long wavelength avoids the problem that tissue autofluorescence contaminates the signals from endogenous fluorescence probes. FLIM at NIR wavelength may therefore be complementary to multiphoton microscopy, especially if the lifetimes of NIR fluorophores report biological parameters of the tissue structures they are bound to. Unfortunately, neither the excitation sources nor the detectors of standard confocal and multiphoton laser scanning systems are directly suitable for excitation and detection of NIR fluorescence. Most of these problems can be solved, however, by using ps diode lasers or Ti:Sapphire lasers at their fundamental wavelength, and NIR-sensitive detectors. With NIR-sensitive PMTs the detection wavelength range can be extended up to 900 nm, with InGaAs SPAD detectors up to 1700 nm. Here, we demonstrate the use of a combination of laser scanning, multi-dimensional TCSPC, and advanced excitation sources and detectors for FLIM at up to 1700 nm. The performance was tested at tissue samples incubated with NIR dyes. The fluorescence lifetimes generally get shorter with increasing absorption and emission wavelengths of the dyes. For the cyanine dye IR1061, absorbing around 1060 nm, the lifetime was found to be as short as 70 ps. Nevertheless the fluorescence decay could still be clearly detected. Almost all dyes showed clear lifetime changes depending on the binding to different tissue constituents.

  11. Comparison of 980-nm and 1070-nm in endovenous laser treatment (EVLT)

    NASA Astrophysics Data System (ADS)

    Topaloglu, Nermin; Tabakoglu, Ozgur; Ergenoglu, Mehmet U.; Gülsoy, Murat

    2009-07-01

    The use of endovenous laser treatment for varicose veins has been increasing in recent years. It is a safer technique than surgical vein stripping. Its complications (e.g. bruising, pain) are less than the complications of surgical vein stripping. But best parameters such as optimum wavelength, power, and application duration are still under investigation to clarify uncertainties about this technique. To prevent its complications and improve its clinical outcomes, the exact mechanism of it has to be known. The aim of this study is to investigate the effect of different laser wavelengths on endovenous laser therapy. In this study 980-nm diode laser and 1070-nm fiber laser were used. Human veins were irradiated with 980-nm and 1070-nm lasers at 8 W and 10 W to find the optimal power and wavelength. After laser application, remarkable shrinkage was observed. Inner and outer diameters of the veins also narrowed for both of the laser types. 10 W of 980-nm laser application led to better shrinkage results.

  12. High power diode lasers emitting from 639 nm to 690 nm

    NASA Astrophysics Data System (ADS)

    Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

    2014-03-01

    There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

  13. Dual illumination OCT at 1050nm and 840nm for whole eye segment imaging

    NASA Astrophysics Data System (ADS)

    Fan, Shanhui; Qin, Lin; Dai, Cuixia; Zhou, Chuanqing

    2014-11-01

    We presented an improved dual channel dual focus spectral domain optical coherence tomography (SD-OCT) with two illuminations at 840 nm and 1050 nm for whole eye segment imaging and biometry in vivo. The two light beams were coupled and optically optimized to scan the anterior and posterior segment of the eye simultaneously. This configuration with dichroic mirrors integrated in the sample arm enables us to acquire images from the anterior segment and retina effectively with minimum loss of sample signal. In addition, the full resolved complex (FRC) method was applied to double the imaging depth for the whole anterior segment imaging by eliminating the mirror image. The axial resolution for 1050 nm and 840 nm OCT was 14 μm and 8 μm in air, respectively. Finally, the system was successfully tested in imaging the unaccommodated and accommodated eyes. The preliminary results demonstrated the significant improvements comparing with our previous dual channel SD-OCT configuration in which the two probing beams had the same central wavelength of 840 nm.

  14. Multiple product pathways in photodissociation of nitromethane at 213 nm

    NASA Astrophysics Data System (ADS)

    Sumida, Masataka; Kohge, Yasunori; Yamasaki, Katsuyoshi; Kohguchi, Hiroshi

    2016-02-01

    In this paper, we present a photodissociation dynamics study of nitromethane at 213 nm in the π → π* transition. Resonantly enhanced multiphoton ionization spectroscopy and ion-imaging were applied to measure the internal state distributions and state-resolved scattering distributions of the CH3, NO(X 2Π, A 2Σ+), and O(3PJ) photofragments. The rotationally state-resolved scattering distribution of the CH3 fragment showed two velocity components, of which the slower one decreased the relative intensity as the rotational and vibrational excitations. The translational energy distribution of the faster CH3 fragment indicated the production of the NO2 counter-product in the electronic excited state, wherein 1 2B2 was the most probable. The NO(v = 0) fragment exhibited a bimodal translational energy distribution, whereas the NO(v = 1 and 2) fragment exhibited a single translational energy component with a relatively larger internal energy. The translational energy of a portion of the O(3PJ) photofragment was found to be higher than the one-photon dissociation threshold, indicating the two-photon process involved. The NO(A 2Σ+) fragment, which was detected by ionization spectroscopy via the Rydberg ←A 2Σ+ transition, also required two-photon energy. These experimental data corroborate the existence of competing photodissociation product pathways, CH3 + NO2,CH3 + NO + O,CH3O + NO, and CH3NO + O, following the π → π* transition. The origins of the observed photofragments are discussed in this report along with recent theoretical studies and previous dynamics experiments performed at 193 nm.

  15. Multiple product pathways in photodissociation of nitromethane at 213 nm.

    PubMed

    Sumida, Masataka; Kohge, Yasunori; Yamasaki, Katsuyoshi; Kohguchi, Hiroshi

    2016-02-14

    In this paper, we present a photodissociation dynamics study of nitromethane at 213 nm in the π → π(*) transition. Resonantly enhanced multiphoton ionization spectroscopy and ion-imaging were applied to measure the internal state distributions and state-resolved scattering distributions of the CH3, NO(X (2)Π, A (2)Σ(+)), and O((3)PJ) photofragments. The rotationally state-resolved scattering distribution of the CH3 fragment showed two velocity components, of which the slower one decreased the relative intensity as the rotational and vibrational excitations. The translational energy distribution of the faster CH3 fragment indicated the production of the NO2 counter-product in the electronic excited state, wherein 1 (2)B2 was the most probable. The NO(v = 0) fragment exhibited a bimodal translational energy distribution, whereas the NO(v = 1 and 2) fragment exhibited a single translational energy component with a relatively larger internal energy. The translational energy of a portion of the O((3)PJ) photofragment was found to be higher than the one-photon dissociation threshold, indicating the two-photon process involved. The NO(A (2)Σ(+)) fragment, which was detected by ionization spectroscopy via the Rydberg ← A (2)Σ(+) transition, also required two-photon energy. These experimental data corroborate the existence of competing photodissociation product pathways, CH3 + NO2,CH3 + NO + O,CH3O + NO, and CH3NO + O, following the π → π(*) transition. The origins of the observed photofragments are discussed in this report along with recent theoretical studies and previous dynamics experiments performed at 193 nm. PMID:26874485

  16. Dependence of light outcoupling in organic light-emitting devices on ITO thickness and roughness

    NASA Astrophysics Data System (ADS)

    Zhang, Yingjie; Aziz, Hany

    2015-09-01

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on both the thickness and roughness of the indium tin oxide (ITO) anode. The effects of changing the ITO thickness from 45 nm to 130 nm are found to be able to vary the current efficiency by 40%. The underlying mechanism is studied and revealed to be related to microcavity effects. The transmittance of the ITO substrate changes significantly with the ITO thickness, resulting in variations in microcavity, and thus light outcoupling efficiency. On the other hand, the effects of increasing the ITO roughness (rms) from 3.3 nm to 8.5 nm are found to increase light scattering at the ITO/organic interface, thus improving extraction of light trapped in the organic/ITO wave-guided mode. In addition to the enhancement in current efficiency, the device fabricated on rough ITO shows similar driving voltage to that made on smooth ITO, indicating that charge balance is not altered by ITO roughness. Contrary to common belief in the community, the lifetime of the OLED is not affected when using rough ITO. The results demonstrate the significant efficiency benefits of using ITO with optimal thicknesses and higher roughness in OLEDs.

  17. Algorithms for muscle oxygenation monitoring corrected for adipose tissue thickness

    NASA Astrophysics Data System (ADS)

    Geraskin, Dmitri; Platen, Petra; Franke, Julia; Kohl-Bareis, Matthias

    2007-07-01

    The measurement of skeletal muscle oxygenation by NIRS methods is obstructed by the subcutaneous adipose tissue which might vary between < 1 mm to more than 12 mm in thickness. A new algorithm is developed to minimize the large scattering effect of this lipid layer on the calculation of muscle haemoglobin / myoglobin concentrations. First, we demonstrate by comparison with ultrasound imaging that the optical lipid signal peaking at 930 nm is a good predictor of the adipose tissue thickness (ATT). Second, the algorithm is based on measurements of the wavelength dependence of the slope ΔA/Δρ of attenuation A with respect to source detector distance ρ and Monte Carlo simulations which estimate the muscle absorption coefficient based on this slope and the additional information of the ATT. Third, we illustrate the influence of the wavelength dependent transport scattering coefficient of the new algorithm by using the solution of the diffusion equation for a two-layered turbid medium. This method is tested on experimental data measured on the vastus lateralis muscle of volunteers during an incremental cycling exercise under normal and hypoxic conditions (corresponding to 0, 2000 and 4000 m altitude). The experimental setup uses broad band detection between 700 and 1000 nm at six source-detector distances. We demonstrate that the description of the experimental data as judged by the residual spectrum is significantly improved and the calculated changes in oxygen saturation are markedly different when the ATT correction is included.

  18. Solution phase photolysis of 1,2-dithiane alone and with single-walled carbon nanotubes.

    PubMed

    Engel, Paul S; Gudimetla, Vittal B; Gancheff, Jorge S; Denis, Pablo A

    2012-08-16

    Photolysis of 1,2-dithiane (1) in acetonitrile with single walled carbon nanotubes (SWCNTs) was earlier reported to form thiol-functionalized SWCNTs via the butane-1,4-dithiyl diradical (2). The present study shows that 2 instead undergoes a facile rearrangement to thiophane-2-thiol (6). This photoreaction is clean, rapid, and irreversible under 313 nm irradiation. The secondary photolysis of 6 with SWCNTs at a shorter wavelength (254 nm) leads to 2-thiophanyl radicals 8, which derivatize SWCNTs by covalent attachment. Pyrolysis of the resulting "sulfurized SWCNTs" affords a mixture of organosulfur compounds, including thiophene formed by dehydrogenation. An unknown additional mechanism causes high TGA weight loss and a large incorporation of sulfur. PMID:22874092

  19. 308-nm excimer laser in endodontics

    NASA Astrophysics Data System (ADS)

    Liesenhoff, Tim

    1992-06-01

    Root canal preparation was performed on 20 extracted human teeth. After opening the coronal pulp, the root canals were prepared by 308 nm excimer laser only. All root canals were investigated under SEM after separation in the axial direction. By sagittal separation of the mandibles of freshly slaughtered cows, it was possible to get access to the tissues and irradiate under optical control. Under irradiation of excimer laser light, tissue starts to fluoresce. It was possible to demonstrate that each tissue (dentin, enamel, bone, pulpal, and connective tissue) has a characteristic spectral pattern. The SEM analyses showed that it is well possible to prepare root canals safely. All organic soft tissue has been removed by excimer laser irradiation. There was no case of via falsa. The simultaneous spectroscopic identification of the irradiated tissue provides a safe protection from overinstrumentation. First clinical trials on 20 patients suffering of chronical apical parodontitis have been carried out successfully.

  20. 1064-nm Nd:YAG laser nucleotomy

    NASA Astrophysics Data System (ADS)

    Vari, Sandor G.; Pergadia, Vani R.; Shi, Wei-Qiang; Snyder, Wendy J.; Fishbein, Michael C.; Grundfest, Warren S.

    1993-07-01

    The high incidence of patients with clinical and neurological symptoms of lumbar disc herniation has spurred the development of less invasive and more cost efficient methods to treat patients. In this study we evaluated pulsed and continuous wave (cw) 1064 nm Nd:YAG laser ablation and induced thermal damage in sheep intervertebral disc. We used the Heraeus LaserSonics Hercules 5040 (Nd:YAG) laser system and 400 micrometers bare and 600 micrometers ball-tipped fibers in cw and pulsed mode. For the laser parameters and fibers used in this study, ablation of the intervertebral disc was successful and thermal damage did not exceed 0.5 mm. Varying beam diameters and focusing abilities (i.e., bare and ball) did not produce any difference in the coagulation thermal effect.

  1. Effects of Au source/drain thickness on electrical characteristics of pentacene thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kwon, Jin-Hyuk; Hahn, Joonku; Bae, Jin-Hyuk; Ham, Youngjin; Park, Jaehoon; Baang, Sungkeun

    2015-11-01

    We investigate the electrical characteristics of top-contact pentacene thin-film transistors (TFTs) fabricated with various thicknesses of the Au source and the drain (S/D) electrodes, i.e., 20, 30, 50, 70, and 105 nm. Pentacene TFTs exhibit enhancements in the drain current and the fieldeffect mobility with increasing thickness of Au S/D electrodes up to 50 nm, after which the TFT performance degrades with increasing Au thickness. A transmission line method is used to analyze the contact resistance between the Au electrode and the pentacene layer in the TFTs, and ultraviolet photoemission spectroscopy measurements are performed to determine the work function of the Au films. The lowest contact resistance, 73 kΩ·cm, is obtained for the 50-nm-thick Au case and is ascribed to the high work function (4.67 eV) of the film. Consequently, the effects of the Au S/D thickness on the performance of top-contact pentacene TFTs can be understood through the behavior of the charge injection at the Au electrode/pentacene interface.

  2. Magnetic relaxation due to spin pumping in thick ferromagnetic films in contact with normal metals

    NASA Astrophysics Data System (ADS)

    Rezende, S. M.; Rodríguez-Suárez, R. L.; Azevedo, A.

    2013-07-01

    Spin pumping is the most important magnetic relaxation channel in ultrathin ferromagnetic layers in contact with normal metals (NMs). Recent experiments indicate that in thick films of insulating yttrium iron garnet (YIG) there is a large broadening of the ferromagnetic resonance (FMR) lines with deposition of a thin Pt layer which cannot be explained by the known damping processes. Here we present a detailed study of the magnetic relaxation due to spin pumping in bilayers made of a ferromagnetic material (FM) and a NM. Two alternative approaches are used to calculate the transverse and longitudinal relaxation rates used in the Bloch-Bloembergen formulation of damping. In one we consider that the dynamic exchange coupling at the interface transfers magnetic relaxation from the heavily damped conduction electron spins in the NM layer to the magnetization of the FM layer while the other utilizes spin currents and the concept of the spin-mixing conductance at the interface. While in thin FM films, the relaxation rates vary with the inverse of the FM layer thickness; in thick films, they become independent of the thickness because in the FM/NM structure the FMR excitation has a surface mode character. Regardless of the thickness range the longitudinal relaxation rate is twice the transverse rate resulting in damping of the magnetization with constant amplitude characterizing a Gilbert process. The enhanced spin-pumping damping explains the experimental observations in YIG/Pt bilayers.

  3. Ligand-controlled polytypism of thick-shell CdSe/CdS nanocrystals.

    PubMed

    Mahler, Benoît; Lequeux, Nicolas; Dubertret, Benoît

    2010-01-27

    We report the synthesis of CdSe/CdS semiconductor core/shell nanocrystals with very thick (5 nm) CdS shells. As in the case of core CdSe nanocrystals, we show that a thick-shell CdSe/CdS core/shell structure can be synthesized in either a pure wurtzite (W) or a zinc-blende (ZB) crystal structure. While the growth of thick-shell wurtzite CdSe/CdS is quite straightforward, we observe that the growth of a CdS shell on zinc-blende CdSe cores is more difficult and leads to wurtzite/zinc-blende polytypism when primary amines are present during the shell formation. Using absorption spectra analysis to differentiate zinc blende from wurtzite CdSe, we show that primary amines can induce a nearly complete structural transformation of CdSe ZB cores into W cores. This better understanding of the CdSe ligand-dependent crystal structural evolution during shell growth is further used to grow large (10 nm)-diameter perfect zinc-blende CdSe core crystals emitting above 700 nm, and perfect ZB thick-shell CdSe/CdS nanocrystals. We observed that all thick-shell CdSe/CdS QDs have extremely reduced blinking events compared to thin-shell QDs, without any significant influence of crystalline structure and polytypism. PMID:20043669

  4. Ultraviolet photodissociation of iodine monochloride (ICl) at 235, 250, and 265 nm

    SciTech Connect

    Diamantopoulou, N.; Kitsopoulos, Theofanis N.; Kartakoulis, A.; Glodic, P.; Samartzis, Peter C.

    2011-05-21

    ICl photolysis in the ultraviolet region of the spectrum (235-265 nm) is studied using the Slice Imaging technique. The Cl*({sup 2}P{sub 1/2})/Cl({sup 2}P{sub 3/2}) and the I*({sup 2}P{sub 1/2})/I({sup 2}P{sub 3/2}) branching ratio between the I({sup 2}P{sub 3/2}) + Cl({sup 2}P{sub 3/2})/Cl*({sup 2}P{sub 1/2}) and I*({sup 2}P{sub 1/2}) + Cl({sup 2}P{sub 3/2})/Cl*({sup 2}P{sub 1/2}) channels is extracted from the respective iodine and chlorine photofragment images. We find that ground state chlorine atoms (Cl({sup 2}P{sub 3/2})) are formed nearly exclusively with excited state iodine atoms (I*({sup 2}P{sub 1/2})), while excited spin-orbit chlorine atoms (Cl*({sup 2}P{sub 1/2})) are concurrently produced only with ground state iodine atoms (I({sup 2}P{sub 3/2})). We conclude that photolysis of ICl in this UV region is a relatively ''clean'' source of spin-orbit excited chlorine atoms that can be used in crossed molecular beam experiments.

  5. Surface micromachined MEMS tunable VCSEL at 1550 nm with > 70 nm single mode tuning

    NASA Astrophysics Data System (ADS)

    Gierl, Christian; Gründl, Tobias; Debernardi, Pierluigi; Zogal, Karolina; Davani, Hooman A.; Grasse, Christian; Böhm, Gerhard; Meissner, Peter; Küppers, Franko; Amann, Markus-Christian

    2012-03-01

    We present surface micro-machined tunable vertical-cavity surface-emitting lasers (VCSELs) operating around 1550nm with tuning ranges up to 100nm and side mode suppression ratios beyond 40 dB. The output power reaches 3.5mW at 1555 nm. The electro-thermal and the electro-statical actuation of a micro electro-mechanical system (MEMS) movable distributed Bragg reflector (DBR) membrane increases/decreases the cavity length which shifts the resonant wavelength of the cavity to higher/lower values. The wavelength is modulated with 200 Hz/120 kHz. Both tuning mechanisms can be used simultaneously within the same device. The newly developed surface micro-machining technology uses competitive dielectric materials for the MEMS, deposited with low temperature plasma enhanced chemical vapor deposition (PECVD), which is cost effective and capable for on wafer mass production.

  6. Cs 728 nm excited state Faraday anomalous dispersion optical filter with indirect pump

    NASA Astrophysics Data System (ADS)

    Tao, Zhiming; Zhang, Xiaogang; Chen, Mo; Liu, Zhongzheng; Zhu, Chuanwen; Liu, Zhiwen; Chen, Jingbiao

    2016-06-01

    We demonstrate a Cs excited state Faraday anomalous dispersion optical filter (ESFADOF) operating at 728 nm using a novel pump method, by which the pump beam and the probe beam in the ESFADOF realized here have no a common energy level. Using this method, the ESFADOF achieves a transmission of 2.39% with a bandwidth of 22.52 MHz, which can be applied to both laser frequency stabilization and future four-level active optical clocks. Under the 455 nm laser pump, in addition to 52D5/2, other states such as 72S1/2, 72P3/2, 62P3/2, 62P1/2 and 52D3/2 have also been populated effectively. Meanwhile, multiple wavelength filters exploiting atomic transitions to these states can be realized.

  7. Synthesis of Naphtho[1',2':4,5]imidazo[1,2-a]pyridines and Imidazo[5,1,2-cd]indolizines Through Pd-Catalyzed Cycloaromatization of 2-Phenylimidazo[1,2-a]pyridines with Alkynes.

    PubMed

    Li, Peiyuan; Zhang, Xinying; Fan, Xuesen

    2015-08-01

    In this paper, palladium-catalyzed oxidative cycloaromatization of 2-phenylimidazo[1,2-a]pyridine (PIP) with internal alkyne is studied. From this reaction, two classes of fused N-heterocycle, naphtho[1',2':4,5]imidazo[1,2-a]pyridine (NIP) and imidazo[5,1,2-cd]indolizine (IID), were formed through dehydrogenative coupling featured with cleavage of the C-H bonds located on different moiety of the PIP substrates. Moreover, when 5-methyl-2-phenylimidazo [1,2-a]pyridine or 2-mesitylimidazo[1,2-a]pyridine was used, either NIP or IID could be obtained as an exclusive product with good efficiency. Intriguingly, Pd(II) showed different action mode in promoting this reaction compared with Rh(III) and led to the formation of NIP with reversed regio-selectivity for the reaction of asymmetrical alkyne. PMID:26168267

  8. Nanofabrication at 1nm resolution by quantum optical lithography (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Pavel, Eugen

    2015-08-01

    A major problem in the optical lithography was the diffraction limit. Here, we report and demonstrate a lithography method, Quantum Optical Lithography [1,2], able to attain 1 nm resolution by optical means using new materials (fluorescent photosensitive glass-ceramics and QMC-5 resist). The performance is several times better than that described for any optical or Electron Beam Lithography (EBL) methods. In Fig. 1 we present TEM images of 1 nm lines recorded at 9.6 m/s. a) b) Fig. 1 TEM images of: a) multiple 1 nm lines written in a fluorescent photosensitive glass-ceramics sample; b) single 1 nm line written in QMC-5 resist. References [1] E. Pavel, S. Jinga, B.S. Vasile, A. Dinescu, V. Marinescu, R. Trusca and N. Tosa, "Quantum Optical Lithography from 1 nm resolution to pattern transfer on silicon wafer", Optics and Laser Technology, 60 (2014) 80-84. [2] E. Pavel, S. Jinga, E. Andronescu, B.S. Vasile, G. Kada, A. Sasahara, N. Tosa, A. Matei, M. Dinescu, A. Dinescu and O.R. Vasile, "2 nm Quantum Optical Lithography", Optics Communications,291 (2013) 259-263

  9. Time-resolved analysis of thickness-dependent dewetting and ablation of silver films upon nanosecond laser irradiation

    NASA Astrophysics Data System (ADS)

    Qi, Dongfeng; Paeng, Dongwoo; Yeo, Junyeob; Kim, Eunpa; Wang, Letian; Chen, Songyan; Grigoropoulos, Costas P.

    2016-05-01

    Nanosecond pulsed laser dewetting and ablation of thin silver films is investigated by time-resolved imaging. Laser pulses of 532 nm wavelength and 5 ns temporal width are irradiated on silver films of different thicknesses (50 nm, 80 nm, and 350 nm). Below the ablation threshold, it is observed that the dewetting process does not conclude until 630 ns after the laser irradiation for all samples, forming droplet-like particles in the spot central region. At higher laser intensities, ablative material removal occurs in the spot center. Cylindrical rims are formed in the peripheral dewetting zone due to the solidification of transported matter at about 700 ns following the laser pulse exposure. In addition to these features, droplet fingers are superposed upon irradiation of 350-nm thick silver films with higher intensity.

  10. Thickness dependence oscillations of transport properties in thin films of a topological insulator Bi91Sb9

    NASA Astrophysics Data System (ADS)

    Rogacheva, E. I.; Orlova, D. S.; Nashchekina, O. N.; Dresselhaus, M. S.; Tang, S.

    2012-07-01

    The dependences of the electrical conductivity, Hall coefficient, magnetoresistance, and Seebeck coefficient on the thickness d (d = 15-400 nm) of the topological insulator Bi91Sb9 thin films grown on mica substrates were obtained at room temperature. In addition to the oscillations with a period Δd = (105 ± 5) nm in the thickness range d = 100-400 nm which are attributed to the quantization of the semiconductor electron energy spectrum, oscillations with a period Δd = (8 ± 2) nm in the range d = 15-60 nm were also revealed. It is suggested that the existence of the high-frequency oscillations in the thin films may be connected with the quantization of the metallic surface states energy spectrum.

  11. Absorption Measurements of Periodically Poled Potassium Titanyl Phosphate (PPKTP) at 775 nm and 1550 nm

    PubMed Central

    Steinlechner, Jessica; Ast, Stefan; Krüger, Christoph; Singh, Amrit Pal; Eberle, Tobias; Händchen, Vitus; Schnabel, Roman

    2013-01-01

    The efficient generation of second-harmonic light and squeezed light requires non-linear crystals that have low absorption at the fundamental and harmonic wavelengths. In this work the photo-thermal self-phase modulation technique is exploited to measure the absorption coefficient of periodically poled potassium titanyl phosphate (PPKTP) at 1,550 nm and 775 nm. The measurement results are (84±40) ppm/cm and (127±24) ppm/cm, respectively. We conclude that the performance of state-of-the-art frequency doubling and squeezed light generation in PPKTP is not limited by absorption. PMID:23291574

  12. The Doubling of 846 nm Light to Produce 423 nm Light for use in Atom Interferometry

    NASA Astrophysics Data System (ADS)

    Archibald, James; Birrell, Jeremey; Tang, Rebecca; Erickson, Chris; Goggins, Landon; Durfee, Dallin

    2009-10-01

    We present progress on a 423 nm fluorescence probe/cooling laser for use in our neutral calcium atom interferometer. The finished system will include an 846 nm diode laser that is coupled to a tapered amplifier. This light will be sent to a buildup cavity where we will achieve second-harmonic generation (SHG) using either a BBO non-linear crystal or a periodically-poled KTP crystal. We will discuss the theoretical considerations relating to the doubling of light in a crystal and the construction of our buildup cavity. We will also discuss its proposed application for use in atom interferometry.

  13. Measurement of 100 nm and 60 nm Particle Standards by Differential Mobility Analysis

    PubMed Central

    Mulholland, George W.; Donnelly, Michelle K.; Hagwood, Charles R.; Kukuck, Scott R.; Hackley, Vincent A.; Pui, David Y. H.

    2006-01-01

    The peak particle size and expanded uncertainties (95 % confidence interval) for two new particle calibration standards are measured as 101.8 nm ± 1.1 nm and 60.39 nm ± 0.63 nm. The particle samples are polystyrene spheres suspended in filtered, deionized water at a mass fraction of about 0.5 %. The size distribution measurements of aerosolized particles are made using a differential mobility analyzer (DMA) system calibrated using SRM® 1963 (100.7 nm polystyrene spheres). An electrospray aerosol generator was used for generating the 60 nm aerosol to almost eliminate the generation of multiply charged dimers and trimers and to minimize the effect of non-volatile contaminants increasing the particle size. The testing for the homogeneity of the samples and for the presence of multimers using dynamic light scattering is described. The use of the transfer function integral in the calibration of the DMA is shown to reduce the uncertainty in the measurement of the peak particle size compared to the approach based on the peak in the concentration vs. voltage distribution. A modified aerosol/sheath inlet, recirculating sheath flow, a high ratio of sheath flow to the aerosol flow, and accurate pressure, temperature, and voltage measurements have increased the resolution and accuracy of the measurements. A significant consideration in the uncertainty analysis was the correlation between the slip correction of the calibration particle and the measured particle. Including the correlation reduced the expanded uncertainty from approximately 1.8 % of the particle size to about 1.0 %. The effect of non-volatile contaminants in the polystyrene suspensions on the peak particle size and the uncertainty in the size is determined. The full size distributions for both the 60 nm and 100 nm spheres are tabulated and selected mean sizes including the number mean diameter and the dynamic light scattering mean diameter are computed. The use of these particles for calibrating DMAs and for

  14. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect

    Sharath, S. U. Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  15. X-1-2 on Ramp with Boeing B-29

    NASA Technical Reports Server (NTRS)

    1949-01-01

    The Bell Aircraft Corporation X-1-2 sitting on the ramp at NACA High- Speed Flight Research Station with the Boeing B-29 launch ship behind. The B-29 was fondly referred to as 'Fertile Myrtle.' The painting near the nose depicts a stork carrying a bundle which is symbolic of the Mothership launching her babe (X-1-2). The pilot access door is open to the cockpit of the X-1-2 aircraft.

  16. 15 CFR 1.2 - Description and design.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 15 Commerce and Foreign Trade 1 2014-01-01 2014-01-01 false Description and design. 1.2 Section 1.2 Commerce and Foreign Trade Office of the Secretary of Commerce THE SEAL OF THE DEPARTMENT OF COMMERCE § 1.2 Description and design. (a) The Act of February 14, 1903 (32 Stat. 825, as amended) (15 U.S.C. 1501), which established the Department...

  17. 26 CFR 1.1-2 - Limitation on tax.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 26 Internal Revenue 1 2010-04-01 2010-04-01 true Limitation on tax. 1.1-2 Section 1.1-2 Internal Revenue INTERNAL REVENUE SERVICE, DEPARTMENT OF THE TREASURY INCOME TAX INCOME TAXES Normal Taxes and Surtaxes § 1.1-2 Limitation on tax. (a) Taxable years ending before January 1, 1971. For taxable years ending before January 1, 1971, the tax...

  18. IR spectroscopic study of the effect of polymer nanofilm thickness on its surface density

    NASA Astrophysics Data System (ADS)

    Tretinnikov, O. N.

    2008-01-01

    The effect of the thickness (in the range 50 10,000 nm) of free-standing (separated from substrate) polystyrene (PS) films on their surface density was investigated by FTIR spectroscopy. For this, an approach has been employed for the first time than consists of analyzing the distortions of the IR band shape caused by anomalous dispersion of the refractive index in the vicinities of these bands. It was found that the surface density of PS films is halved as the film thickness changes from 1500 to 150 nm. The fact that the density starts to decrease in the micron range of film thickness rather than in the submicron range may suggest that there are important factors not taken into account by existing theoretical models for thin and ultrathin polymer films.

  19. Thickness dependent fatigue life at microcrack nucleation for metal thin films on flexible substrates

    NASA Astrophysics Data System (ADS)

    Sun, X. J.; Wang, C. C.; Zhang, J.; Liu, G.; Zhang, G. J.; Ding, X. D.; Zhang, G. P.; Sun, J.

    2008-10-01

    For polymer-supported metal thin films used in flexible electronics, the definition of the fatigue lifetime at microcrack nucleation (FLMN) should be more physically meaningful than all the previous definitions at structural instability. In this paper, the FLMN of Cu films (with thickness from 100 nm to 3.75 µm) as well as Al thin films (from 80 to 800 nm) was experimentally characterized at different strain ranges and different thicknesses by using a simple electrical resistance measurement (ERM). A significant thickness dependence was revealed for the FLMN and a similar Coffin-Manson fatigue relationship observed commonly in bulk materials was found to be still operative in both the films. Microstructural analyses were carried out to verify the feasibility of ERM correspondingly.

  20. Plasmonic thickness variation study of gold nanostructures in ultraviolet-visible light regime

    NASA Astrophysics Data System (ADS)

    Ghosh, Pijush; Debu, Desalegn Tadesse; French, David; Bauman, Stephen; Herzog, Joseph B.

    Noble metal nanostructures exhibit strong surface plasmon resonances in the ultraviolet-visible light range that are not present in bulk metal. In this study, we have observed the plasmonic properties of different sized gold nanodisks and nanorods with varying thickness. The samples were fabricated by electron beam lithography on silicon dioxide substrates. Depending on the thickness of the nanostructures, strong and well-defined surface plasmon resonances were found (wavelength 400nm - 1000nm). For experimental and theoretical results, we have used Dark field spectroscopy and finite element method, respectively. We found that resonance peak was shifted with nanostructure thickness. By using Dark field spectroscopy, the scattered light from individual structures can be analyzed with less background noise and the incident light was at an angle to the substrate.

  1. Thin-thick coexistence behavior of 8CB liquid crystalline films on silicon.

    PubMed

    Garcia, R; Subashi, E; Fukuto, M

    2008-05-16

    The wetting behavior of thin films of 4-n-octyl-4'-cyanobiphenyl (8CB) on Si is investigated via optical and x-ray reflectivity measurement. An experimental phase diagram is obtained showing a broad thick-thin coexistence region spanning the bulk isotropic-to-nematic (T(IN)) and the nematic-to-smectic-A (T(NA)) temperatures. For Si surfaces with coverages between 47 and 72 +/- 3 nm, reentrant wetting behavior is observed twice as we increase the temperature, with separate coexistence behaviors near T(IN) and T(NA). For coverages less than 47 nm, however, the two coexistence behaviors merge into a single coexistence region. The observed thin-thick coexistence near the second-order NA transition is not anticipated by any previous theory or experiment. Nevertheless, the behavior of the thin and thick phases within the coexistence regions is consistent with this being an equilibrium phenomenon. PMID:18518487

  2. Atmospheric vapor phase deposition of nanometer-thick anti-stiction fluoropolymer coatings for silicon surfaces

    NASA Astrophysics Data System (ADS)

    Itoh, Shintaro; Takahashi, Kazuhiro; Morita, Hiroyuki; Fukuzawa, Kenji; Zhang, Hedong

    2016-06-01

    Anti-stiction coatings for silicon surfaces are a key technology to prevent the failure of nanoelectromechanical systems (NEMS) during operation and improve the forming accuracy in nanoimprint technology. In this study, we propose an atmospheric vapor phase deposition method to coat a silicon surface with fluoropolymers such as the perfluoropolyethers Fomblin Zdol 2000 and Zdol 4000. Thickness distributions, surface energies, coverages, and stiction forces for the deposited films were evaluated experimentally. The proposed method resulted in over 90% coverage with a film thickness of about 1 nm. The film thickness uniformity was around 0.1 nm over an area of 5 × 5 mm2. This coating effectively reduced the stiction forces by half compared with a bare silicon surface.

  3. Thickness dependence of the magnetic properties of ripple-patterned Fe/MgO(001) films

    NASA Astrophysics Data System (ADS)

    Büttner, Felix; Zhang, Kun; Seyffarth, Susanne; Liese, Tobias; Krebs, Hans-Ulrich; Vaz, C. A. F.; Hofsäss, Hans

    2011-08-01

    Grazing incidence Xe+ ion sputtering was used to create a nanoscale ripple pattern on a thin Fe film, epitaxially grown on MgO(001). The Fe film has a thickness gradient of 0-20 nm and a ripple height of about 3 nm, giving rise to a transition from a continuous film to separated nanorods with decreasing film thickness. This allowed the investigation of the competition between the uniaxial and biaxial anisotropy of the irradiated sample as a function of thickness. From magneto-optical Kerr effect measurements, we determine accurately the cubic magnetocrystalline anisotropy and the uniaxial anisotropy that originates from the ripple pattern using a coherent rotation model. Our results show that the uniaxial anisotropy strength increases, whereas the contribution of the biaxial crystal anisotropy decreases, when going from the continuous film to the nanorod structures.

  4. Interference method for monitoring the refractive index and the thickness of transparent films during deposition

    NASA Astrophysics Data System (ADS)

    Alius, H.; Schmidt, R.

    1990-04-01

    An interferometric method is described for simultaneous measurement of the refractive index and the thickness of transparent isotropic films during the deposition process. Two laser beams are focused impinging at two different angles onto the film. The intensity of the beams reflected from the growing film shows minima and maxima, which are counted and evaluated to determine the refractive index n and the thickness d of the film in the range of some 100 nm up to several micrometers using 633-nm laser light. n and d can be determined within an accuracy better than 1%, if the thickness is larger than three times the vacuum wavelength of the laser. The measurements are well in accordance with calculations of the intensity modulation. The method can easily be extended to multilayer systems.

  5. Resistance Spot Welding of AA5052 Sheet Metal of Dissimilar Thickness

    NASA Astrophysics Data System (ADS)

    Mat Din, N. A.; Zuhailawati, H.; Anasyida, A. S.

    2016-02-01

    Resistance spot welding of dissimilar thickness of AA5052 aluminum alloy was performed in order to investigate the effect of metal thickness on the weldment strength. Resistance spot welding was done using a spot welder machine available in Coraza Systems Sdn Bhd using a hemispherical of chromium copper electrode tip with radius of 6.00 mm under 14 kA of current and 0.02 bar of pressure for all thickness combinations. Lap joint configuration was produced between 2.0 mm thick sheet and 1.2 - 3.2 mm thick sheet, respectively. Microstructure of joint showed asymmetrical nugget shape that was larger on the thicker side indicating larger molten metal volume. Joint 2.0 mm x 3.2 mm sheets has the lowest hardness in both transverse direction and through thickness direction because less heat left in the weld nugget. The microstructure shows that this joint has coarse grains of HAZ. As thickness of sheet metal increased, the failure load of the joints increased. However, there was no linear correlation established between joint strength and metal thickness due to different shape of fusion zone in dissimilar thickness sheet metal.

  6. Cloud Thickness from Diffusion of Lidar Pulses in Clouds

    NASA Technical Reports Server (NTRS)

    Cahalan, Robert F.; Davis, A.; McGill, Matthew

    1999-01-01

    Measurements of the distribution of reflected light from a laser beam incident on an aqueous suspension of particles or "cloud" with known thickness and particle size distribution are reported. The distribution is referred to as the "cloud radiative Green's function", G. In the diffusion domain, G is sensitive to cloud thickness, allowing that important quantity to be retrieved. The goal of the laboratory simulation is to provide preliminary estimates of sensitivity of G to cloud thickness,for use in the optimal design of an offbeam Lidar instrument for remote sensing of cloud thickness (THOR, Thickness from Offbeam Returns). These clouds of polystyrene microspheres suspended in water are analogous to real clouds of water droplets suspended in air. The microsphere size distribution is roughly lognormal, from 0.5 microns to 25 microns, similar to real clouds. Density of suspended spheres is adjusted so mean-free-path of visible photons is about 10 cm, approximately 1000 times smaller than in real clouds. The light source is a ND:YAG laser at 530 nm. Detectors are flux and photon-counting Photomultiplier Tube (PMTS), with a glass probe for precise positioning. A Labview 5 VI controls positioning, and data acquisition, via an NI Motion Control board connected to a stepper motor driving an Edmund linear slider, and a 16-channel 16-bit NI-DAQ board. The stepper motor is accurate to 10 microns, and step size is selectable from the VI software. Far from the incident beam, the rate of exponential increase as the direction of the incident beam is approached scales as expected from diffusion theory, linearly with the cloud thickness, and inversely as the square root of the reduced optical thickness, and is independent of particle size. Near the beam the signal begins to increase faster than exponential, due to single and low-order scattering near the backward direction, and here the distribution depends on particle size. Results are being used to verify 3D Monte Carlo

  7. Variability of aerosol optical thickness and atmospheric turbidity in Tunisia

    NASA Astrophysics Data System (ADS)

    Masmoudi, M.; Chaabane, M.; Medhioub, K.; Elleuch, F.

    The aerosol optical thickness (AOT) τa computed from the spectral sun photometer in Thala (Tunisia) exhibited variability ranging from approximately 0.03 to greater than 2.0 at 870 nm for March-October 2001. These measurements are compared to the aerosol optical thickness computed in Ouagadougou (Burkina-Faso), Banizoumbou (Niger), IMC Oristano (Sardinia) and Rome Tor Vergata (Italy). Analysis of τa data from this observation network suggests that there is a high temporal and spatial variability of τa in the different sites. The Angström wavelength exponent α was found to vary with the magnitude of the aerosol optical thickness, with values as high as 1.5 for very low τa, and values of -0.1 for high τa situations. The relationship between the two parameters τa and α is investigated. Values of the turbidity coefficient β have been determined in Thala (Tunisia) for 8 months in 2001 based on a direct fitting method of the Angström power law expression using sun photometer data. The monthly averaged values of the turbidity coefficient β vary between 0.15 and 0.33. The months of July and October experienced the highest turbidity, while April experienced the lowest aerosol loading on average. The turbidity shows a maximum and minimum values for the Southwest and the Northwest wind directions, respectively. The single scattering albedo ωo for the 870 nm wavelength obtained from solar aureole data in Thala is analysed according to the particles' origin.

  8. Precision polarizability measurements of atomic cesium's 8 s 2S1 / 2 and 9 s 2S1 / 2 states

    NASA Astrophysics Data System (ADS)

    Weaver, Hannah; Kortyna, Andrew

    2013-05-01

    We report hyperfine-resolved scalar polarizabilities for cesium's 8 s 2S1 / 2 and 9 s 2S1 / 2 states using resonant two-photon spectroscopy. Two single-mode, external-cavity diode lasers drive the 6 s 2S1 / 2 --> 6 p 2P1 / 2 --> ns 2S1 / 2 transition (n = 8 or 9). Both laser beams are split and counter-propagate through an effusive beam and a vapor cell. An electric field applied across two parallel plates imposes Stark shifts on the ns 2S1 / 2 levels in the effusive beam. Electric-field strengths are measured in situ. The laser frequency is calibrated in the vapor cell using a phase modulation technique, with the modulation frequency referenced to the ground-state hyperfine splitting of atomic rubidium. Our measured 8 s 2S1 / 2 polarizability, 38370 +/- 380 a03, agrees with previous theory and experiments. Our measured 9 s 2S1 / 2 polarizability, 150700 +/- 1100 a03, agrees within two sigma of theory, but we are unaware of previous measurements. We also verify that these polarizabilities are independent of the hyperfine levels, placing upper limits on the differential polarizabilities of 200 +/- 260 a03 for the 8 s 2S1 / 2 state and 490 +/- 450 a03 for the 9 s 2S1 / 2 state. Supported by the National Science Foundation under Grant PHY-0653107.

  9. Optimization of 1,2,5-Thiadiazole Carbamates as Potent and Selective ABHD6 Inhibitors #

    PubMed Central

    Patel, Jayendra Z.; Nevalainen, Tapio J.; Savinainen, Juha R.; Adams, Yahaya; Laitinen, Tuomo; Runyon, Robert S.; Vaara, Miia; Ahenkorah, Stephen; Kaczor, Agnieszka A.; Navia-Paldanius, Dina; Gynther, Mikko; Aaltonen, Niina; Joharapurkar, Amit A.; Jain, Mukul R.; Haka, Abigail S.; Maxfield, Frederick R.; Laitinen, Jarmo T.; Parkkari, Teija

    2015-01-01

    At present, inhibitors of α/β-hydrolase domain 6 (ABHD6) are viewed as a promising approach to treat inflammation and metabolic disorders. This article describes the optimization of 1,2,5-thiadiazole carbamates as ABHD6 inhibitors. Altogether, 34 compounds were synthesized and their inhibitory activity was tested using lysates of HEK293 cells transiently expressing human ABHD6 (hABHD6). Among the compound series, 4-morpholino-1,2,5-thiadiazol-3-yl cyclooctyl(methyl)carbamate (JZP-430, 55) potently and irreversibly inhibited hABHD6 (IC50 44 nM) and showed good selectivity (∼230 fold) over fatty acid amide hydrolase (FAAH) and lysosomal acid lipase (LAL), the main off-targets of related compounds. Additionally, activity-based protein profiling (ABPP) indicated that compound 55 (JZP-430) displayed good selectivity among the serine hydrolases of mouse brain membrane proteome. PMID:25504894

  10. Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

    PubMed

    Rautiainen, Jussi; Krestnikov, Igor; Butkus, Mantas; Rafailov, Edik U; Okhotnikov, Oleg G

    2010-03-01

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. PMID:20195322

  11. Thickness dependence of superconducting properties in magnesium diboride thin films

    NASA Astrophysics Data System (ADS)

    Beringer, Douglas; Clavero, Cesar; Tan, Teng; Xi, Xiaoxing; Lukaszew, Rosa

    2013-03-01

    Thin film MgB2 is a promising material currently researched for improvements in superconducting radio frequency (SRF) technology and applications. At present, bulk niobium SRF accelerating cavities suffer from a fundamental upper limit in maximally sustained accelerating gradients; however, a scheme involving multi-layered superstructures consisting of superconducting-insulating-superconducting (SIS) layers has been proposed to overcome this fundamental material limit of 50 MV/m. The SIS multi-layer paradigm is reliant upon implementing a thin shielding material with a suitably high Hc1 which may prevent early field penetration in a bulk material layer and consequently delay the high field breakdown. It has been predicted that for thin superconducting films -- thickness less than the London penetration depth (~ 140 nm in the case of MgB2) -- the lower critical field Hc1 will be enhanced with decreasing thickness. Thus, MgB2, with a high bulk Hc1 value is a prime candidate for such SIS structures. Here we present our study on the structure, surface morphology and superconducting properties on a series of MgB2 thin films and correlate the effects of film thickness and surface morphology on Hc1. This work was supported in part by the U.S. Department of Energy (DE-SC0004410 and DE-AC05-06OR23177) and Defense Threat Reduction Agency (HDTRA1-10-1-0072).

  12. Ice thickness in the Northwest Passage

    NASA Astrophysics Data System (ADS)

    Haas, Christian; Howell, Stephen E. L.

    2015-09-01

    Recently, the feasibility of commercial shipping in the ice-prone Northwest Passage (NWP) has attracted a lot of attention. However, very little ice thickness information actually exists. We present results of the first ever airborne electromagnetic ice thickness surveys over the NWP carried out in April and May 2011 and 2015 over first-year and multiyear ice. These show modal thicknesses between 1.8 and 2.0 m in all regions. Mean thicknesses over 3 m and thick, deformed ice were observed over some multiyear ice regimes shown to originate from the Arctic Ocean. Thick ice features more than 100 m wide and thicker than 4 m occurred frequently. Results indicate that even in today's climate, ice conditions must still be considered severe. These results have important implications for the prediction of ice breakup and summer ice conditions, and the assessment of sea ice hazards during the summer shipping season.

  13. Sub-5 nm nanostructures fabricated by atomic layer deposition using a carbon nanotube template.

    PubMed

    Woo, Ju Yeon; Han, Hyo; Kim, Ji Weon; Lee, Seung-Mo; Ha, Jeong Sook; Shim, Joon Hyung; Han, Chang-Soo

    2016-07-01

    The fabrication of nanostructures having diameters of sub-5 nm is very a important issue for bottom-up nanofabrication of nanoscale devices. In this work, we report a highly controllable method to create sub-5 nm nano-trenches and nanowires by combining area-selective atomic layer deposition (ALD) with single-walled carbon nanotubes (SWNTs) as templates. Alumina nano-trenches having a depth of 2.6 ∼ 3.0 nm and SiO2 nano-trenches having a depth of 1.9 ∼ 2.2 nm fully guided by the SWNTs have been formed on SiO2/Si substrate. Through infilling ZnO material by ALD in alumina nano-trenches, well-defined ZnO nanowires having a thickness of 3.1 ∼ 3.3 nm have been fabricated. In order to improve the electrical properties of ZnO nanowires, as-fabricated ZnO nanowires by ALD were annealed at 350 °C in air for 60 min. As a result, we successfully demonstrated that as-synthesized ZnO nanowire using a specific template can be made for various high-density resistive components in the nanoelectronics industry. PMID:27188268

  14. Sub-5 nm nanostructures fabricated by atomic layer deposition using a carbon nanotube template

    NASA Astrophysics Data System (ADS)

    Woo, Ju Yeon; Han, Hyo; Kim, Ji Weon; Lee, Seung-Mo; Ha, Jeong Sook; Shim, Joon Hyung; Han, Chang-Soo

    2016-07-01

    The fabrication of nanostructures having diameters of sub-5 nm is very a important issue for bottom-up nanofabrication of nanoscale devices. In this work, we report a highly controllable method to create sub-5 nm nano-trenches and nanowires by combining area-selective atomic layer deposition (ALD) with single-walled carbon nanotubes (SWNTs) as templates. Alumina nano-trenches having a depth of 2.6 ∼ 3.0 nm and SiO2 nano-trenches having a depth of 1.9 ∼ 2.2 nm fully guided by the SWNTs have been formed on SiO2/Si substrate. Through infilling ZnO material by ALD in alumina nano-trenches, well-defined ZnO nanowires having a thickness of 3.1 ∼ 3.3 nm have been fabricated. In order to improve the electrical properties of ZnO nanowires, as-fabricated ZnO nanowires by ALD were annealed at 350 °C in air for 60 min. As a result, we successfully demonstrated that as-synthesized ZnO nanowire using a specific template can be made for various high-density resistive components in the nanoelectronics industry.

  15. Voigt deconvolution method and its applications to pure oxygen absorption spectrum at 1270 nm band

    NASA Astrophysics Data System (ADS)

    AL-Jalali, Muhammad A.; Aljghami, Issam F.; Mahzia, Yahia M.

    2016-03-01

    Experimental spectral lines of pure oxygen at 1270 nm band were analyzed by Voigt deconvolution method. The method gave a total Voigt profile, which arises from two overlapping bands. Deconvolution of total Voigt profile leads to two Voigt profiles, the first as a result of O2 dimol at 1264 nm band envelope, and the second from O2 monomer at 1268 nm band envelope. In addition, Voigt profile itself is the convolution of Lorentzian and Gaussian distributions. Competition between thermal and collisional effects was clearly observed through competition between Gaussian and Lorentzian width for each band envelope. Voigt full width at half-maximum height (Voigt FWHM) for each line, and the width ratio between Lorentzian and Gaussian width (ΓLΓG- 1) have been investigated. The following applied pressures were at 1, 2, 3, 4, 5, and 8 bar, while the temperatures were at 298 K, 323 K, 348 K, and 373 K range.

  16. Voigt deconvolution method and its applications to pure oxygen absorption spectrum at 1270 nm band.

    PubMed

    Al-Jalali, Muhammad A; Aljghami, Issam F; Mahzia, Yahia M

    2016-03-15

    Experimental spectral lines of pure oxygen at 1270 nm band were analyzed by Voigt deconvolution method. The method gave a total Voigt profile, which arises from two overlapping bands. Deconvolution of total Voigt profile leads to two Voigt profiles, the first as a result of O2 dimol at 1264 nm band envelope, and the second from O2 monomer at 1268 nm band envelope. In addition, Voigt profile itself is the convolution of Lorentzian and Gaussian distributions. Competition between thermal and collisional effects was clearly observed through competition between Gaussian and Lorentzian width for each band envelope. Voigt full width at half-maximum height (Voigt FWHM) for each line, and the width ratio between Lorentzian and Gaussian width (ΓLΓG(-1)) have been investigated. The following applied pressures were at 1, 2, 3, 4, 5, and 8 bar, while the temperatures were at 298 K, 323 K, 348 K, and 373 K range. PMID:26709019

  17. Photodissociation of the Propargyl (C3D3) Radicals at 248 nm and 193 nm

    SciTech Connect

    Neumark., D.M.; Crider, P.E.; Castiglioni, L.; Kautzman, K.K.

    2009-01-21

    The photodissociation of perdeuterated propargyl (D{sub 2}CCCD) and propynyl (D{sub 3}CCC) radicals was investigated using fast beam photofragment translational spectroscopy. Radicals were produced from their respective anions by photodetachment at 540 nm and 450 nm (below and above the electron affinity of propynyl). The radicals were then photodissociated by 248 nm or 193 nm light. The recoiling photofragments were detected in coincidence with a time- and position-sensitive detector. Three channels were observed: D{sub 2} loss, CD + C{sub 2}D{sub 2}, and CD{sub 3} + C{sub 2}. Obervation of the D loss channel was incompatible with this experiment and was not attempted. Our translational energy distributions for D{sub 2} loss peaked at nonzero translational energy, consistent with ground state dissociation over small (< 1 eV) exit barriers with respect to separated products. Translational energy distributions for the two heavy channels peaked near zero kinetic energy, indicating dissociation on the ground state in the absence of exit barriers.

  18. Characterization of LANDSAT Panels Using the NIST BRDF Scale from 1100 nm to 2500 nm

    NASA Technical Reports Server (NTRS)

    Markham, Brian; Tsai, Benjamin K.; Allen, David W.; Cooksey, Catherine; Yoon, Howard; Hanssen, Leonard; Zeng, Jinan; Fulton, Linda; Biggar, Stuart; Markham, Brian

    2010-01-01

    Many earth observing sensors depend on white diffuse reflectance standards to derive scales of radiance traceable to the St Despite the large number of Earth observing sensors that operate in the reflective solar region of the spectrum, there has been no direct method to provide NIST traceable BRDF measurements out to 2500 rim. Recent developments in detector technology have allowed the NIST reflectance measurement facility to expand the operating range to cover the 250 nm to 2500 nm range. The facility has been modified with and additional detector using a cooled extended range indium gallium arsenide (Extended InGaAs) detector. Measurements were made for two PTFE white diffuse reflectance standards over the 1100 nm to 2500 nm region at a 0' incident and 45' observation angle. These two panels will be used to support the OLI calibration activities. An independent means of verification was established using a NIST radiance transfer facility based on spectral irradiance, radiance standards and a diffuse reflectance plaque. An analysis on the results and associated uncertainties will be discussed.

  19. THE SPECTRUM OF THORIUM FROM 250 nm TO 5500 nm: RITZ WAVELENGTHS AND OPTIMIZED ENERGY LEVELS

    SciTech Connect

    Redman, Stephen L.; Nave, Gillian; Sansonetti, Craig J.

    2014-03-01

    We have made precise observations of a thorium-argon hollow cathode lamp emission spectrum in the region between 350 nm and 1175 nm using a high-resolution Fourier transform spectrometer. Our measurements are combined with results from seven previously published thorium line lists to re-optimize the energy levels of neutral, singly, and doubly ionized thorium (Th I, Th II, and Th III). Using the optimized level values, we calculate accurate Ritz wavelengths for 19, 874 thorium lines between 250 nm and 5500 nm (40, 000 cm{sup –1} to 1800 cm{sup –1}). We have also found 102 new thorium energy levels. A systematic analysis of previous measurements in light of our new results allows us to identify and propose corrections for systematic errors in Palmer and Engleman and typographical errors and incorrect classifications in Kerber et al. We also found a large scatter with respect to the thorium line list of Lovis and Pepe. We anticipate that our Ritz wavelengths will lead to improved measurement accuracy for current and future spectrographs that make use of thorium-argon or thorium-neon lamps as calibration standards.

  20. Inverse Design of a Thick Supercritical Airfoil

    NASA Astrophysics Data System (ADS)

    Pambagjo, Tjoetjoek Eko; Nakahashi, Kazuhiro; Obayashi, Shigeru

    In this paper, a study on designing a thick supercritical airfoil by utilizing Takanashi’s inverse design method is discussed. One of the problems to design a thick supercritical airfoil by Takanashi’s method is that an oscillation of the geometry may occur during the iteration process. To reduce the oscillation, an airfoil parameterization method is utilized as the smoothing procedure. A guideline to determine the target pressure distribution to realize the thick airfoil is also discussed.