Science.gov

Sample records for 11-22 semipolar gan

  1. Crystallographic Wet Chemical Etching of Semipolar GaN (11-22) Grown on m-Plane Sapphire Substrates.

    PubMed

    Kim, Jae-Kwan; Lee, Sung Nam; Song, Keun-Man; Yoon, Jae-Sik; Lee, Ji-Myon

    2015-07-01

    This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution. Semipolar (11-22) GaN could be etched easily using a KOH solution and the etch rate was higher than that of Ga-polar c-plane GaN (0001). The etch rate was anisotropic and the highest etch rate was measured to be approximately 116 nm/min for the (1011) plane and 62 nm/min for the (11-20) plane GaN using a 4 M KOH solution at 100 °C, resulting in specific surface features, such as inclined trigonal cells.

  2. Development of semipolar (11-22) LEDs on GaN templates

    NASA Astrophysics Data System (ADS)

    Corbett, B.; Quan, Z.; Dinh, D. V.; Kozlowski, G.; O'Mahony, D.; Akhter, M.; Schulz, S.; Parbrook, P.; Maaskant, P.; Caliebe, M.; Hocker, M.; Thonke, K.; Scholz, F.; Pristovsek, M.; Han, Y.; Humphreys, C. J.; Brunner, F.; Weyers, M.; Meyer, T. M.; Lymperakis, L.

    2016-03-01

    We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density, 100 mm diameter GaN templates were obtained by metal organic vapour phase epitaxy (VPE) and hydride VPE techniques. Chemical-mechanical polishing was used to obtain smooth surfaces for the subsequent growth of LED structures. Ohmic contacts to the p-type GaN were obtained despite the lower activated acceptor levels. The LEDs show excellent output power and fast carrier dynamics. Freestanding LEDs have been obtained by use of laser-lift-off. The work is the result of collaboration under the European Union funded ALIGHT project.

  3. (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates

    SciTech Connect

    Bai, J. Xu, B.; Guzman, F. G.; Xing, K.; Gong, Y.; Hou, Y.; Wang, T.

    2015-12-28

    We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linear increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs.

  4. Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Bai, J.; Hou, Y.; Yu, X.; Gong, Y.; Smith, R. M.; Wang, T.

    2016-12-01

    In order to realize semi-polar (11-22) GaN based laser diodes grown on sapphire, it is necessary to further improve the crystal quality of the (11-22) GaN obtained by using our overgrowth approach developed on regularly arrayed micro-rod templates [T. Wang, Semicond. Sci. Technol. 31, 093003 (2016)]. This can be achieved by carefully designing micro-rod templates. Based on transmission electron microscopy and photoluminescence measurements, it has been found that the micro-rod diameter plays a vital role in effectively reducing both the dislocation density and the basal staking fault (BSF) density of the overgrown (11-22) GaN, but in different manners. The BSF density reduces monotonically with increasing the micro-rod diameter from 2 to 5 μm, and then starts to be saturated when the micro-rod diameter further increases. In contrast, the dislocation density reduces significantly when the micro-rod diameter increases from 2 to 4 μm, and then starts to increase when the diameter further increases to 5 μm. Furthermore, employing shorter micro-rods is useful for removing additional BSFs, leading to further improvement in crystal quality. The results presented provide a very promising approach to eventually achieving (11-22) semi-polar III-nitride laser diodes.

  5. Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

    SciTech Connect

    Zhang, Y.; Bai, J.; Hou, Y.; Smith, R. M.; Yu, X.; Gong, Y.; Wang, T.

    2016-02-15

    We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO{sub 2} mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

  6. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates

    NASA Astrophysics Data System (ADS)

    Bengoechea-Encabo, A.; Albert, S.; Zuñiga-Perez, J.; de Mierry, P.; Trampert, A.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E.

    2013-12-01

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11-22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  7. Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue

    NASA Astrophysics Data System (ADS)

    Li, Z.; Jiu, L.; Gong, Y.; Wang, L.; Zhang, Y.; Bai, J.; Wang, T.

    2017-02-01

    Thick and crack-free semi-polar (11-22) AlGaN layers with various high Al compositions have been achieved by means of growth on the top of nearly but not yet fully coalesced GaN overgrown on micro-rod templates. The range of the Al composition of up to 55.7% was achieved, corresponding to an emission wavelength of up to 270 nm characterised by photoluminescence at room temperature. X-ray diffraction (XRD) measurements show greatly improved crystal quality as a result of lateral overgrowth compared to the AlGaN counterparts on standard planar substrates. The full width at half maximums of the XRD rocking curves measured along the [1-100]/[11-2-3] directions (the two typical orientations for characterizing the crystal quality of (11-22) AlGaN) are 0.2923°/0.2006° for 37.8% Al and 0.3825°/0.2064° for 55.7% Al, respectively, which have never been achieved previously. Our calculation based on reciprocal space mapping measurements has demonstrated significant strain relaxation in the AlGaN as a result of utilising the non-coalesced GaN underneath, contributing to the elimination of any cracks. The results presented have demonstrated that our overgrowth technique can effectively manage strain and improve crystal quality simultaneously.

  8. Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots

    SciTech Connect

    Das, A.; Kotsar, Y.; Monroy, E.

    2011-05-16

    Semipolar (11-22)-oriented InGaN/GaN quantum dots (QDs) emitting in the 380-620 nm spectral range were synthesized by plasma-assisted molecular-beam epitaxy. The influence of the growth temperature on the properties of InGaN QDs has been investigated by photoluminescence and transmission electron microscopy. Growth temperatures low enough to prevent indium desorption provide a favorable environment to semipolar plane (11-22) to enhance the internal quantum efficiency of InGaN/GaN nanostructures.

  9. Study of green light-emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualities

    NASA Astrophysics Data System (ADS)

    Oh, Dong-Sub; Jang, Jong-Jin; Nam, Okhyun; Song, Keun-Man; Lee, Sung-Nam

    2011-07-01

    We investigated the anisotropic optical and structural properties of semipolar (11-22) InGaN-based green light emitting diodes (LEDs) grown on GaN templates with the different crystallographic properties. By introducing the N 2-GaN as a seed layer grown at a N 2 atmosphere, the full width at half maximum (FWHMs) of X-ray rocking curves (XRCs) for semipolar GaN templates were decreased from 1331 to 727 arcsec and from 1955 to 1076 arcsec with the incident beam directions of [11-2-3] and [1-100], respectively. It was found that the interfacial qualities of InGaN/GaN quantum wells (QWs) would be improved by reducing the FWHMs of XRCs with regardless of crystallographic directions. However, the thickness uniformity of InGaN QWs was significantly deteriorated for the direction of [11-2-3] rather than [1-100]. In addition, the EL intensity of semipolar green LEDs would be increased by enhancing the crystal quality of semipolar GaN template, which could also be resulted in the formation of abrupt interface and the enhancement of homogeneity at InGaN/GaN QWs.

  10. Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Monavarian, Morteza; Rosales, Daniel; Gil, Bernard; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

    2016-02-01

    Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.

  11. Stability of Carbon Incorpoated Semipolar GaN(1101) Surface

    NASA Astrophysics Data System (ADS)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

    2011-08-01

    The structural stability of carbon incorporated GaN(1101) surfaces is theoretically investigated by performing first-principles pseudopotential calculations. The calculated surface formation energies taking account of the metal organic vapor phase epitaxy conditions demonstrate that several carbon incorporated surfaces are stabilized depending on the growth conditions. Using surface phase diagrams, which are obtained by comparing the calculated adsorption energy with vapor-phase chemical potentials, we find that the semipolar surface forms NH2 and CH2 below ˜1660 K while the polar GaN(0001) surface with CH3 is stabilized below ˜1550 K. This difference could be one of possible explanations for p-type doping on the semipolar GaN(1101) surface.

  12. Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

    NASA Astrophysics Data System (ADS)

    Li, Z.; Wang, L.; Jiu, L.; Bruckbauer, J.; Gong, Y.; Zhang, Y.; Bai, J.; Martin, R. W.; Wang, T.

    2017-02-01

    Exciton localization generally disturbs uniform population inversion, leading to an increase in the threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet (DUV) laser diodes (LDs), and this also generates exciton localization. Temperature-dependent photoluminescence and room temperature cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition ranging from 0.37 to 0.56 in order to systematically study the optical properties (in particular, exciton localization) of both the near-band-edge emission and the basal-plane stacking faults related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts has been performed, exhibiting that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN. As a consequence, semi-polar (11-22) AlGaN demonstrates a greater potential than its c-plane counterpart in terms of the growth of DUV LDs.

  13. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    SciTech Connect

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-10-26

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  14. Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes

    SciTech Connect

    Hyeon Baik, Kwang; Kim, Hyonwoong; Jang, Soohwan; Lee, Sung-Nam; Lim, Eunju; Pearton, S. J.; Ren, F.

    2014-02-17

    The hydrogen detection characteristics of semipolar (112{sup ¯}2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112{sup ¯}0) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53 eV at 25 °C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN.

  15. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    NASA Astrophysics Data System (ADS)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  16. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    SciTech Connect

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C.; Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T.; Siekacz, M.; Kucharski, R.

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  17. Semi-polar GaN materials technology for high IQE green LEDs.

    SciTech Connect

    Koleske, Daniel; Lee, Stephen Roger; Crawford, Mary H; Coltrin, Michael Elliott; Fini, Paul

    2013-06-01

    The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

  18. Ga-polar GaN nanocolumn arrays with semipolar faceted tips

    NASA Astrophysics Data System (ADS)

    Urban, A.; Malindretos, J.; Klein-Wiele, J.-H.; Simon, P.; Rizzi, A.

    2013-05-01

    Selective area growth of GaN nanocolumns (NCs) by molecular beam epitaxy on laser ablated pre-patterned GaN(0001) templates is shown to provide regular arrays of Ga-polar NCs. The Ga diffusion-assisted growth mechanism is analyzed and the experiments suggest that the effective growth conditions vary with the height of the NCs due to Ga diffusion on the mask and the NC sidewalls, ranging from N-rich up to stoichiometry. The obtained morphology with semipolar facets at the tip is discussed within the framework of equilibrium thermodynamics, which provides a consistent picture also for the growth of N-polar NCs with flat tips. The structural investigation reveals almost defect-free semipolar \\{1\\overline {1}02\\} GaN facets at the top of the NCs, which is known to be a promising way of producing templates for nanoscale semipolar GaN-based heterostructures. Almost no polarization discontinuity is expected for InxGa1-xN/GaN interfaces on such facets.

  19. Eliminating stacking faults in semi-polar GaN by AlN interlayers

    SciTech Connect

    Dadgar, A.; Ravash, R.; Veit, P.; Schmidt, G.; Mueller, M.; Dempewolf, A.; Bertram, F.; Wieneke, M.; Christen, J.; Krost, A.

    2011-07-11

    We report on the elimination of stacking faults by the insertion of low-temperature AlN interlayers in nearly (1016) and (1104) oriented semi-polar GaN grown by metalorganic vapor phase epitaxy on Si(112) and Si(113), respectively. The elimination of these defects is visualized by cathodoluminescence (CL) as well as scanning transmission electron microscopy (STEM) and STEM-CL. A possible annihilation mechanism is discussed which leads to the conclusion that the elimination mechanism is most likely valid for all layers with (1101) surfaces, enabling heteroepitaxial semi- and non-polar GaN free from stacking faults.

  20. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

    NASA Astrophysics Data System (ADS)

    Wang, T.

    2016-09-01

    The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

  1. Semipolar (202{sup ¯}1) GaN and InGaN quantum wells on sapphire substrates

    SciTech Connect

    Leung, Benjamin; Wang, Dili; Kuo, Yu-Sheng; Xiong, Kanglin; Song, Jie; Chen, Danti; Park, Sung Hyun; Han, Jung; Hong, Su Yeon; Choi, Joo Won

    2014-06-30

    Here, we demonstrate a process to produce planar semipolar (202{sup ¯}1) GaN templates on sapphire substrates. We obtain (202{sup ¯}1) oriented GaN by inclined c-plane sidewall growth from etched sapphire, resulting in single crystal material with on-axis x-ray diffraction linewidth below 200 arc sec. The surface, composed of (101{sup ¯}1) and (101{sup ¯}0) facets, is planarized by the chemical-mechanical polishing of full 2 in. wafers, with a final surface root mean square roughness of <0.5 nm. We then analyze facet formation and roughening mechanisms on the (202{sup ¯}1) surface and establish a growth condition in N{sub 2} carrier gas to maintain a planar surface for further device layer growth. Finally, the capability of these semipolar (202{sup ¯}1) GaN templates to produce high quality device structures is verified by the growth and characterization of InGaN/GaN multiple quantum well structures. It is expected that the methods shown here can enable the benefits of using semipolar orientations in a scalable and practical process and can be readily extended to achieve devices on surfaces using any orientation of semipolar GaN on sapphire.

  2. Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN(101⁻1) and GaN(202⁻1) surfaces

    SciTech Connect

    Romanyuk, O. Jiříček, P.; Bartoš, I.; Paskova, T.

    2014-09-14

    Polarity of semipolar GaN(101⁻1) (101⁻1⁻) and GaN(202⁻1) (202⁻1⁻) surfaces was determined with X-ray photoelectron diffraction (XPD) using a standard MgKα source. The photoelectron emission from N 1s core level measured in the a-plane of the crystals shows significant differences for the two crystal orientations within the polar angle range of 80–100° from the (0001) normal. It was demonstrated that XPD polar plots recorded in the a-plane are similar for each polarity of the GaN(101⁻1) and GaN(202⁻1) crystals if referred to (0001) crystal axes. For polarity determinations of all important GaN(h0h⁻l) semipolar surfaces, the above given polar angle range is suitable.

  3. Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

    PubMed Central

    Pristovsek, Markus; Han, Yisong; Zhu, Tongtong; Frentrup, Martin; Kappers, Menno J; Humphreys, Colin J; Kozlowski, Grzegorz; Maaskant, Pleun; Corbett, Brian

    2015-01-01

    We report on the growth of semi-polar GaN (112) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited. Total thicknesses up to 5 m were realised without cracks in the layer. Transmission electron microscopy showed that most dislocations propagate along [0001] direction and hence can be covered by overgrowth from the next trench. The defect densities were below and stacking fault densities less than 100 cm . These numbers are similar to reports on patterned r-plane sapphire. Typical X-ray full width at half maximum (FHWM) were 500” for the asymmetric (00.6) and 450” for the (11.2) reflection. These FHWMs were 50 % broader than reported for patterned r-plane sapphire which is attributed to different defect structures and total thicknesses. The surface roughness shows strong variation on templates. For the final surface roughness the roughness of the sidewalls of the GaN ridges at the time of coalescence are critical. PMID:26212392

  4. Study of epitaxial lateral overgrowth of semipolar (1 1 − 2 2) GaN by using different SiO{sub 2} pattern sizes

    SciTech Connect

    Song, Ki-Ryong; Lee, Jae-Hwan; Han, Sang-Hyun; Yi, Hye-Rin; Lee, Sung-Nam

    2013-12-15

    Graphical abstract: - Highlights: • We examine comparative studies of semipolar ELO-GaN film. • Semipolar ELO-GaN film was grown by three step growth method. • The achievement of smooth surface morphology of semipolar ELO-GaN. • The crystal and optical properties was significantly improved by ELO process. - Abstract: We investigated the growth mode and the crystal properties of lateral epitaxial overgrowth (LEO) semipolar (1 1 − 2 2) GaN by using the various SiO{sub 2} pattern sizes of 6, 8, 10 and 12 μm with the window width of 4.0 μm. By using three-step growth technique, we successfully obtained the fully-coalescenced semipolar (1 1 − 2 2) LEO-GaN films regardless of the SiO{sub 2} pattern sizes. However, the coalescence thickness of LEO-GaN film was decreased with decreasing SiO{sub 2} pattern size, indicating that the coalescence of semipolar (1 1 − 2 2) GaN was easily formed by decreasing the pattern size of SiO{sub 2} mask. The full width at half maximums (FWHMs) of X-ray rocking curves (XRCs) of LEO-GaN films decreased with increasing SiO{sub 2} pattern size. In the pattern size of 4 × 10 μm, we achieved the minimum XRCs FWHM of 537 and 368 arc s with two different X-ray incident beam directions of [1 1 − 2 − 3] and [1 − 1 0 0], respectively. Moreover, the photoluminescence bandedge emission of semipolar (1 1 − 2 2) GaN was 45 times increased by LEO process. Based on these results, we concluded that the LEO pattern size of 4 × 10 μm would effectively decrease crystal defects of semipolar (1 1 − 2 2) GaN epilayer, resulting in an improvement of the optical properties.

  5. Morphology and strain of self-assembled semipolar GaN quantum dots in (1122) AlN

    SciTech Connect

    Dimitrakopulos, G. P.; Kalesaki, E.; Kioseoglou, J.; Kehagias, Th.; Lotsari, A.; Komninou, Ph.; Karakostas, Th.; Lahourcade, L.; Monroy, E.; Jurczak, G.; Young, T. D.; Dluzewski, P.

    2010-11-15

    GaN quantum dots (QDs) grown in semipolar (1122) AlN by plasma-assisted molecular-beam epitaxy were studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy techniques. The embedded (1122)-grown QDs exhibited pyramidal or truncated-pyramidal morphology consistent with the symmetry of the nucleating plane, and were delimited by nonpolar and semipolar nanofacets. It was also found that, in addition to the (1122) surface, QDs nucleated at depressions comprising (1011) facets. This was justified by ab initio density functional theory calculations showing that such GaN/AlN facets are of lower energy compared to (1122). Based on quantitative high-resolution TEM strain measurements, the three-dimensional QD strain state was analyzed using finite-element simulations. The internal electrostatic field was then estimated, showing small potential drop along the growth direction, and limited localization at most QD interfaces.

  6. InGaN based green laser diodes on semipolar GaN substrate

    NASA Astrophysics Data System (ADS)

    Adachi, Masahiro

    2014-10-01

    This paper reviews the development of the InGaN-based green laser diodes on semipolar GaN substrates, especially focusing on (20\\bar{2}1) plane. The reduction of piezoelectric fields in InGaN quantum wells on the (20\\bar{2}1) planes was investigated by a small blue shift in electroluminescence peaks, and high crystal quality was confirmed by clear interfaces in a transmission electron microscopy image, narrower FWHM in electroluminescence peaks, and smaller localization energy in time resolved PL results, as compared with the other planes. These physical characteristics of the (20\\bar{2}1) leads to better laser properties: lower threshold current densities, higher output powers of over 100 mW in the spectral region beyond 530 nm, and higher wall plug efficiencies as high as 7.0-8.9% in the wavelength range of 525-532 nm, compared to those of the other planes. Estimated lifetimes were over 5000 h at 50 mW and 2000 h at 70 mW under cw operation with auto power control at a case temperature of 55 °C. The (20\\bar{2}1) plane is the promising candidate for InGaN-based true green laser diodes.

  7. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  8. Improved crystal quality of semipolar (10 1 bar 3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer

    NASA Astrophysics Data System (ADS)

    Lee, Ho-Jun; Bae, Si-Young; Lekhal, Kaddour; Mitsunari, Tadashi; Tamura, Akira; Honda, Yoshio; Amano, Hiroshi

    2016-11-01

    The planar epitaxial growth of semipolar (10 1 bar 3) GaN on a Si(001) substrate was performed on a directionally sputtered AlN buffer layer. Three types of interlayers, i.e., single AlN, double AlN, and a stack of AlN/GaN layers were grown by metalorganic chemical vapor deposition (MOCVD) to achieve high quality GaN films. The results for the stack of AlN/GaN layers provide highest crystal quality and optical properties for GaN. Comparing the top (Ga face) and bottom (N face) surfaces of grown semipolar (10 1 bar 3) GaN confirms the defect density reduction that is due to the application of interlayers. Moreover, reduced inversion domain density on the bottom surface is attributed with the insertion of interlayers. Improving the quality of semipolar GaN on Si(001) substrates is expected to be useful for GaN/Si(001) integrated optoelectronics.

  9. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  10. Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (112{sup -}2) GaN templates

    SciTech Connect

    Niehle, M. Trampert, A.; Albert, S.; Bengoechea-Encabo, A.; Calleja, E.

    2015-03-01

    We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN(112{sup -}2) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

  11. Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates

    SciTech Connect

    Bai, J.; Gong, Y.; Xing, K.; Yu, X.; Wang, T.

    2013-03-11

    (1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 {mu}m occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilation and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.

  12. Semipolar single component GaN on planar high index Si(11h) substrates

    SciTech Connect

    Ravash, Roghaiyeh; Blaesing, Juergen; Dadgar, Armin; Krost, Alois

    2010-10-04

    We present metal organic vapor phase epitaxy growth of polarization reduced, single component GaN on nonpatterned Si(112), Si(113), Si(114), Si(115), and Si(116) substrates. We find that the inclination angle of GaN c-axis with respect to the surface normal depends on the angle between Si(111) and above mentioned Si(11h)-surfaces. The growth of the GaN layer is essentially performed as c-axis oriented growth on the naturally occurring Si(111) facets of these Si(11h)-surfaces. The c-axis tilt-angle of GaN crystallites depends on the Si-surface direction and increases from Si(112) to Si(116) planes. GaN layers are investigated by x-ray analysis and scanning electron microscopy.

  13. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

    SciTech Connect

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

  14. Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202xAF1xAF) GaN substrates

    NASA Astrophysics Data System (ADS)

    Pourhashemi, A.; Farrell, R. M.; Hardy, M. T.; Hsu, P. S.; Kelchner, K. M.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2013-10-01

    We demonstrate high-power AlGaN-cladding-free blue laser diodes (LDs) on semipolar (202¯1¯) GaN substrates with peak output powers and external quantum efficiencies (EQEs) that are comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202¯1¯) GaN substrates using InGaN waveguiding layers and GaN cladding layers. The devices lased at 454 nm at room temperature. We measured an output power of 2.15 W, an EQE of 39%, and a differential quantum efficiency of 49% from a single facet with a pulsed drive current (current density) of 2.02 A (28.1 kA/cm2).

  15. Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 macr 01 } and { 2 2 macr 01 } InGaN/GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Kojima, Takanori; Takano, Shota; Hasegawa, Ryosuke; Timmerman, Dolf; Koizumi, Atsushi; Funato, Mitsuru; Kawakami, Yoichi; Fujiwara, Yasufumi

    2016-10-01

    We have grown Eu-doped GaN on striped GaN facet structures with { 1 1 ¯ 01 } faces using a selective-area-growth technique. It was found that the orientation of the Eu-doped GaN facets depends on the Eu doping conditions. Semipolar { n n ¯ 01 } (n = 2, 3) facets, which are difficult to form using conventional undoped GaN, can be obtained by changing the growth temperature and the amount of the supplied Eu precursor. InGaN/GaN multiple quantum wells (MQWs) were also fabricated on the Eu-doped semipolar facets, and their structural and luminescence properties were investigated. The MQWs fabricated on the Eu-doped semipolar { 2 2 ¯ 01 } facets have a photoluminescence decay time of 112-314 ps, which is 10 times shorter than those of conventional (0001) QWs. These results show that the Eu doping of GaN is a promising means of obtaining various semipolar facets, which can contribute to improve the radiative recombination probability.

  16. Spectroscopic study of semipolar (112{sup ¯}2)-HVPE GaN exhibiting high oxygen incorporation

    SciTech Connect

    Schustek, Philipp; Hocker, Matthias; Thonke, Klaus; Klein, Martin; Scholz, Ferdinand; Simon, Ulrich

    2014-10-28

    Spatially resolved luminescence and Raman spectroscopy investigations are applied to a series of (112{sup ¯}2)-GaN samples grown by hydride vapor phase epitaxy (HVPE) grown over an initial layer deposited by metal organic vapor phase epitaxy on patterned sapphire substrates. Whereas these two differently grown GaN layers are crystallographically homogeneous, they differ largely in their doping level due to high unintentional oxygen uptake in the HVPE layer. This high doping shows up in luminescence spectra, which can be explained by a free-electron recombination band for which an analytical model considering the Burstein-Moss shift, conduction band tailing, and the bandgap renormalization is included. Secondary ion mass spectrometry, Raman spectroscopy, and Hall measurements concordantly determine the electron density to be above 10{sup 19 }cm{sup −3}. In addition, the strain state is assessed by Raman spectroscopy and compared to a finite element analysis.

  17. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E.; Trampert, A.

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  18. Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.

    PubMed

    Zhu, Tongtong; Ding, Tao; Tang, Fengzai; Han, Yisong; Ali, Muhammad; Badcock, Tom; Kappers, Menno J; Shields, Andrew J; Smoukov, Stoyan K; Oliver, Rachel A

    2016-02-03

    Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density non- and semipolar heteroepitaxial GaN via selective area epitaxy using self-assembled multilayers of silica nanospheres (MSN). Nonpolar (11-20) and semipolar (11-22) GaN layers with high crystal quality have been achieved by epitaxial integration of the MSN and a simple one-step overgrowth process, by which both dislocation and basal plane stacking fault densities can be significantly reduced. The underlying defect reduction mechanisms include epitaxial growth through the MSN covered template, island nucleation via nanogaps in the MSN, and lateral overgrowth and coalescence above the MSN. InGaN/GaN multiple quantum wells structures grown on a nonpolar GaN/MSN template show more than 30-fold increase in the luminescence intensity compared to a control sample without the MSN. This self-assembled MSN technique provides a new platform for epitaxial growth of nitride semiconductors and offers unique opportunities for improving the material quality of GaN grown on other orientations and foreign substrates or heteroepitaxial growth of other lattice-mismatched materials.

  19. Defect blocking via laterally induced growth of semipolar (1 0 1̅ 1) GaN on patterned substrates

    NASA Astrophysics Data System (ADS)

    Khoury, Michel; Vennéguès, Philippe; Leroux, Mathieu; Delaye, Vincent; Feuillet, Guy; Zúñiga-Pérez, Jesus

    2016-11-01

    Semipolar (1 0 \\overline{1}  1) GaN thin films with state-of-the-art optical and structural quality have been obtained on silicon substrates by metal organic chemical vapor deposition using a novel defect reduction method. We initially apply a classical patterning approach on Si (0 0 1) {{7}\\circ} off substrates to reveal the Si (1 1 1) facets over which the subsequent inclined epitaxy will be carried out. After the growth of AlN, the sample is etched with \\text{S}{{\\text{F}}6} before the GaN growth is done on the same structure. The process has shown to induce the spontaneous formation of a defect blocking layer that substantially reduces the presence of threading dislocations and basal stacking faults. This is confirmed by correlated optical and structural characterizations. Further, a simple model explaining the origin and working-principle of the blocking layer will be discussed.

  20. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    NASA Astrophysics Data System (ADS)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (<1° departure) and smooth (2.0 nm root mean square line-edge roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  1. Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods.

    PubMed

    Hortelano, V; Martínez, O; Cuscó, R; Artús, L; Jiménez, J

    2016-03-04

    Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping.

  2. Thick nonpolar m-plane and semipolar (10 1 ̅ 1 ̅) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3

    NASA Astrophysics Data System (ADS)

    Iso, Kenji; Matsuda, Karen; Takekawa, Nao; Hikida, Kazuhiro; Hayashida, Naoto; Murakami, Hisashi; Koukitu, Akinori

    2017-03-01

    GaN layers of thickness 0.5-1.3 mm were grown at 1280 °C at a growth rate of 95-275 μm/h by tri-halide vapor-phase epitaxy on nonpolar m-plane (10 1 ̅ 0) and semipolar (10 1 ̅ 1 ̅) ammonothermal GaN substrates. For nonpolar m-plane (10 1 ̅ 0) with a -5° off-angle, the full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) and the basal plane stacking fault (BSF) density increased from 50 to 178″ and from 4.8×101 to 1.0×103 cm-1, respectively, upon increasing the growth rate from 115 to 245 μm/h. On the other hand, the XRC-FWHM and the BSF density for semipolar (10 1 ̅ 1 ̅) grown at 275 μm/h were as small as 28″ and 8.3×101 cm-1, respectively.

  3. Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

    SciTech Connect

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry; Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; Mierry, Philippe de; Damilano, Benjamin; Massies, Jean; Bigenwald, Pierre

    2015-07-14

    We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  4. Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

    NASA Astrophysics Data System (ADS)

    Liu, Jian-Ming; Zhang, Jie; Lin, Wen-Yu; Ye, Meng-Xin; Feng, Xiang-Xu; Zhang, Dong-Yan; Steve, Ding; Xu, Chen-Ke; Liu, Bao-Lin

    2015-05-01

    In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions. Project support by the National High Technology Research and Development Program of China (Green Laser).

  5. Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 10 1 ¯ ) semipolar GaN template

    NASA Astrophysics Data System (ADS)

    Li, Yueliang; Qi, Haoyuan; Meisch, Tobias; Hocker, Matthias; Thonke, Klaus; Scholz, Ferdinand; Kaiser, Ute

    2017-01-01

    In this work, I2-type basal-plane stacking faults (BSFs) were observed in In0.25Ga0.75N multiple quantum wells (MQWs) grown on a ( 10 1 ¯1 ) semipolar GaN template by high-resolution transmission electron microscopy. The structure and formation mechanisms of the I2-type BSFs at the GaN-InGaN interface were investigated in detail. The formation of the I2-type BSFs contributes to lattice mismatch accommodation within the InGaN QWs. Their density varies in different regions of the sample due to the inhomogeneous distribution of the In content in the InGaN layer. The relationship between the In content in the InxGa1-xN layer and the I2-type BSFs is discussed.

  6. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Han, Jung; Kneissl, Michael

    2012-02-01

    Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

  7. U.S. Department of Energy, National Energy Technology Laboratory Solid-State Lighting Core Technologies Light Emitting Diodes on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100 0C

    SciTech Connect

    Chakraborty, Arpan; David, Aurelien; Grundmann, Michael; Tyagi, Anurag; Craven, Michael; Hurni, Christophe; Cich, Michael

    2015-03-31

    GaN is a crucial material for light-emitting diodes (LEDs) emitting in the violet-to-green range. Despite its good performance, it still suffers from significant technical limitations. In particular, the efficiency of GaN-based LEDs decreases at high current (“current droop”) and high temperature (“temperature droop”). This is problematic in some lighting applications, where a high-power operation is required. This program studied the use of particular substrates to improve the efficiency of GaN-based LEDs: bulk semipolar (SP) GaN substrates. These substrates possess a very high material quality, and physical properties which are distinctly different from legacy substrates currently used in the LED industry. The program focused on the development of accurate metrology to quantify the performance of GaN-based LEDs, and on improvement to LED quality and design on SP substrates. Through a thorough optimization process, we demonstrated violet LEDs with very high internal quantum efficiency, exceeding 85% at high temperature and high current. We also investigated longer-wavelength blue emitters, but found that the limited strain budget was a key limitation.

  8. 7 CFR 11.22 - Functions.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 1 2010-01-01 2010-01-01 false Functions. 11.22 Section 11.22 Agriculture Office of the Secretary of Agriculture NATIONAL APPEALS DIVISION Organization And Functions § 11.22 Functions. (a) Director. Provides executive direction for NAD. The Director is responsible for developing...

  9. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

    NASA Astrophysics Data System (ADS)

    Romanov, Alexey E.; Young, Erin C.; Wu, Feng; Tyagi, Anurag; Gallinat, Chad S.; Nakamura, Shuji; DenBaars, Steve P.; Speck, James S.

    2011-05-01

    This article presents a theoretical analysis of dislocation behavior and stress relaxation in semipolar III-nitride heteroepitaxy, e.g., for AlxGa1-xN and InyGa1-yN layers grown on {hh2-h-m}- or {h0h-m}-type semipolar planes of GaN substrates. We demonstrate that the shear stresses on the unique inclined basal (0001) plane do not vanish for such growth geometries. This leads to the onset of relaxation processes in semipolar III-nitride heterostructures via dislocation glide in the basal slip systems <1-1-20>(0001) and to the formation of misfit dislocations (MDs) with Burgers vectors of (a /3)<1-1-20>-type at the semipolar heterointerface. Next we calculate the Matthews-Blakeslee critical thickness for MD formation in semipolar III-nitride layers together with the MD equilibrium spacings for complete misfit relaxation. The component of the MD Burgers vector normal to the film/substrate interface will cause a crystal lattice tilt in the epilayer with respect to the GaN substrate. The calculated magnitudes of the tilt angles are 0.62° and 0.67° for AlxGa1-xN and InyGa1-yN alloys with compositions of x = 0.20 and y = 0.07, respectively, grown in the (112-2) semipolar orientation. The modeling results are discussed in light of recent experimental observations [A. Tyagi et al., Appl Phys. Lett. 95, 251905 (2009); E. Young et al., Appl. Phys. Express 3, 011004 (2010); and F. Wu et al., J. Appl. Phys. 109, 033505 (2011)] of MDs and crystal lattice tilt in semipolar III-nitride heteroepitaxial layers.

  10. Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

    SciTech Connect

    Kim, Jaehwan; Min, Daehong; Jang, Jongjin; Lee, Kyuseung; Chae, Sooryong; Nam, Okhyun

    2014-10-28

    In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

  11. 37 CFR 11.22 - Investigations.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2010-07-01 2010-07-01 false Investigations. 11.22 Section... COMMERCE REPRESENTATION OF OTHERS BEFORE THE UNITED STATES PATENT AND TRADEMARK OFFICE Investigations and Disciplinary Proceedings; Jurisdiction, Sanctions, Investigations, and Proceedings § 11.22 Investigations....

  12. 37 CFR 11.22 - Investigations.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2011-07-01 2011-07-01 false Investigations. 11.22 Section... COMMERCE REPRESENTATION OF OTHERS BEFORE THE UNITED STATES PATENT AND TRADEMARK OFFICE Investigations and Disciplinary Proceedings; Jurisdiction, Sanctions, Investigations, and Proceedings § 11.22 Investigations....

  13. 37 CFR 11.22 - Investigations.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2012-07-01 2012-07-01 false Investigations. 11.22 Section... COMMERCE REPRESENTATION OF OTHERS BEFORE THE UNITED STATES PATENT AND TRADEMARK OFFICE Investigations and Disciplinary Proceedings; Jurisdiction, Sanctions, Investigations, and Proceedings § 11.22 Investigations....

  14. 27 CFR 11.22 - Consignment sales.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Consignment sales. 11.22... OF THE TREASURY LIQUORS CONSIGNMENT SALES Unlawful Sales Arrangements § 11.22 Consignment sales. Consignment sales are arrangements wherein the trade buyer is under no obligation to pay for distilled...

  15. Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Lo, Ikai; Pang, Wen-Yuan; Hsu, Yu-Chi; Hsieh, Chia-Ho; Shih, Cheng-Hung; Chou, Mitch M. C.; Chen, Wen-Yen; Hsu, Tzu-Min; Hsu, Gary Z. L.

    2013-06-15

    The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO{sub 2} substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

  16. Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices

    NASA Astrophysics Data System (ADS)

    Chakraborty, Arpan

    Conventional state-of-the-art wurtzite nitrides based light-emitters, grown along the polar c-direction, are characterized by the presence of polarization-induced electrostatic fields in the quantum wells. These built-in fields are detrimental to the performance of optoelectronic devices. Growth of light-emitters along nonpolar and semipolar directions is an effective means to circumvent the adverse effects of polarization. This dissertation focuses on the growth and characterization of nonpolar and semipolar (Al, Ga, In)N based heterostructures and devices. Two nonpolar planes, a- and m-, and two semipolar planes, (10 11) and (1013), have been investigated in this thesis. Initially, the growth of n-type and p-type nonpolar a-plane GaN was optimized to yield cladding layers of the highest possible conductivity in the devices. Various interesting observations, e.g. low acceptor activation energy, anisotropic conductivity, etc, were made during the course of this study. In order to achieve defect reduction in planar a-plane GaN films, in-situ SiNx interlayers were used as nano-mask. The effect of SiNx interlayer on the structural and optical properties of the overgrown GaN layer was investigated. Growth of InGaN/GaN multiple-quantum wells (MQWs) along nonpolar and semipolar planes was investigated and their structural and optical properties were studied. The effect of defects on the emission properties of the MQWs has been addressed. Optical measurements revealed the absence of polarization in the MQWs. Based on the MQW optimization, light-emitting diodes were grown on nonpolar and semipolar templates and their electrical and optical properties were studied. Electroluminescence measurement confirmed the absence of built-in electric fields in the quantum well. We demonstrated the first nonpolar and semipolar light-emitting diodes with milliwatt-range output power. DC output power as high as 0.6 mW at 20 mA and pulsed output power as high as 23.5 mW at 1 A were

  17. Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

    PubMed Central

    2015-01-01

    Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density non- and semipolar heteroepitaxial GaN via selective area epitaxy using self-assembled multilayers of silica nanospheres (MSN). Nonpolar (11–20) and semipolar (11–22) GaN layers with high crystal quality have been achieved by epitaxial integration of the MSN and a simple one-step overgrowth process, by which both dislocation and basal plane stacking fault densities can be significantly reduced. The underlying defect reduction mechanisms include epitaxial growth through the MSN covered template, island nucleation via nanogaps in the MSN, and lateral overgrowth and coalescence above the MSN. InGaN/GaN multiple quantum wells structures grown on a nonpolar GaN/MSN template show more than 30-fold increase in the luminescence intensity compared to a control sample without the MSN. This self-assembled MSN technique provides a new platform for epitaxial growth of nitride semiconductors and offers unique opportunities for improving the material quality of GaN grown on other orientations and foreign substrates or heteroepitaxial growth of other lattice-mismatched materials. PMID:27065755

  18. GaN quantum dot polarity determination by X-ray photoelectron diffraction

    NASA Astrophysics Data System (ADS)

    Romanyuk, O.; Bartoš, I.; Brault, J.; Mierry, P. De; Paskova, T.; Jiříček, P.

    2016-12-01

    Growth of GaN quantum dots (QDs) on polar and semipolar GaN substrates is a promising technology for efficient nitride-based light emitting diodes (LED). The QDs crystal orientation typically repeats the polarity of the substrate. In case of non-polar or semipolar substrates, the polarity of QDs is not obvious. In this article, the polarity of GaN QDs and of underlying layers was investigated nondestructively by X-ray photoelectron diffraction (XPD). Polar and semipolar GaN/Al0.5Ga0.5N heterostructures were grown on the sapphire substrates with (0001) and (1 1 bar 00) orientations by molecular beam epitaxy (MBE). Polar angle dependence of N 1s core-level photoelectron intensities were measured from GaN QDs and compared with the corresponding experimental curves from free-standing GaN crystals. It is confirmed experimentally, that the crystalline orientation of polar (0001) GaN QDs follows the orientation of the (0001) sapphire substrate. In case of semipolar GaN QDs grown on (1 1 bar 00) sapphire substrate, the (11 2 bar 2) polarity of QDs was determined.

  19. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

    PubMed

    Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A; Hite, Jennifer K; Eddy, Charles R; Kim, Jihyun

    2014-08-14

    Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar (11̄22) and nonpolar (11̄20) GaN films grown on sapphire substrates. An alternating KOH/H3PO4/KOH etch process was developed to control the orientation of the facets on the thin-film surface. The initial etch step in KOH produced c- and m-plane facets on the surface of both semipolar (11̄22) and nonpolar (11̄20) GaN thin-films. A second etch step in H3PO4 solution additionally exposed a (̄1̄12̄2) plane, which is chemically stable in H3PO4 solution. By repeating the chemical etch with KOH solution, the m-plane facets as seen in the original KOH etch step were recovered. The etching methods developed in our work can be used to control the surface morphologies of nonpolar and semipolar GaN-based optoelectronic devices such as light-emitting diodes and solar cells.

  20. Enhanced polarization of (11–22) semi-polar InGaN nanorod array structure

    SciTech Connect

    Athanasiou, M.; Smith, R. M.; Hou, Y.; Zhang, Y.; Gong, Y.; Wang, T.

    2015-10-05

    By means of a cost effective nanosphere lithography technique, an InGaN/GaN multiple quantum well structure grown on (11–22) semipolar GaN has been fabricated into two dimensional nanorod arrays which form a photonic crystal (PhC) structure. Such a PhC structure demonstrates not only significantly increased emission intensity, but also an enhanced polarization ratio of the emission. This is due to an effective inhibition of the emission in slab modes and then redistribution to the vertical direction, thus minimizing the light scattering processes that lead to randomizing of the optical polarization. The PhC structure is designed based on a standard finite-difference-time-domain simulation, and then optically confirmed by detailed time-resolved photoluminescence measurements. The results presented pave the way for the fabrication of semipolar InGaN/GaN based emitters with both high efficiency and highly polarized emission.

  1. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

    NASA Astrophysics Data System (ADS)

    Amilusik, M.; Sochacki, T.; Lucznik, B.; Fijalkowski, M.; Smalc-Koziorowska, J.; Weyher, J. L.; Teisseyre, H.; Sadovyi, B.; Bockowski, M.; Grzegory, I.

    2014-10-01

    In this work homoepitaxial HVPE-GaN growth on non-polar and semi-polar GaN seeds was described. Two crystallization processes, in the same experimental conditions but using different carrier gases: N2 and H2, were performed. An influence of growth directions and growth conditions on the growth rate and properties (morphology, structural quality and oxygen and silicon contaminations) of obtained crystals were investigated and discussed. It was shown that the growth rate strongly depends on the growth direction and the carrier gas. It was demonstrated that for the semi-polar [20-21] direction it was possible to obtain high quality and highly conductive (without intentional doping) gallium nitride layers.

  2. Indium incorporation in semipolar (20 2 ̅ 1) and nonpolar (10 1 ̅ 0) InGaN grown by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sawicka, M.; Feduniewicz-Żmuda, A.; Kryśko, M.; Turski, H.; Muziol, G.; Siekacz, M.; Wolny, P.; Skierbiszewski, C.

    2017-02-01

    Semipolar (20 2 ̅ 1) , nonpolar m-plane (10 1 ̅ 0) and polar c-plane (0001) GaN and InGaN layers were grown by plasma-assisted molecular beam epitaxy. The surface of semipolar and nonpolar GaN grown under Ga-rich conditions is very smooth. The indium incorporation efficiency in InGaN layers grown under In-rich growth conditions is studied on three surface orientations (i) as a function of temperature from 570 to 650 °C and (ii) for varied active nitrogen flux from 0.41 to 2.03 μm/h. The In content follows the relation (10 1 ̅ 0) < (20 2 ̅ 1) <<(0001) in all of the experiments. Indium composition in InGaN layers can be increased (i) by the decrease of the growth temperature and (ii) increase of the applied nitrogen flux for all studied surface orientations. Additionally, surface morphology of semipolar, nonpolar and c-polar InGaN layers grown at 650, 640 and 620 °C is compared. No increase in surface roughness for semipolar and nonpolar InGaN was observed in contrast to c-plane counterparts.

  3. Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire

    NASA Astrophysics Data System (ADS)

    Rishinaramangalam, Ashwin K.; Nami, Mohsen; Fairchild, Michael N.; Shima, Darryl M.; Balakrishnan, Ganesh; Brueck, S. R. J.; Feezell, Daniel F.

    2016-03-01

    The fabrication of electrically injected triangular-nanostripe core-shell semipolar III-nitride LEDs (TLEDs) is demonstrated using interferometric lithography and catalyst-free bottom-up selective-area metal-organic chemical vapor deposition (MOCVD). This alternative approach enables semipolar orientations on inexpensive, c-plane sapphire substrates, in comparison with planar growth on free-standing GaN substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy reveal nonuniform quantum well thickness and composition, respectively, as a function of location on the triangular stripes. The broad electroluminescence spectra, wavelength shift with increasing current density, and nonlinear light vs current characteristics are well correlated with the observed quantum-well nonuniformities.

  4. Progress toward achieving high power and high efficiency semipolar LEDs and their characterization

    NASA Astrophysics Data System (ADS)

    Zhong, Hong

    Performance of current commercially available wurtzite nitride based light-emitting diodes (LEDs), grown along the polar (0001) c-plane orientation, is limited by the presence of polarization-related electric fields inside multi-quantum wells (MQWs). The discontinuities in both spontaneous and piezoelectric polarization at the heterointerfaces result in internal electric fields in the quantum wells. These electric fields cause carrier separation [quantum confined Stark effect (QCSE)] and reduce the radiative recombination rate within the quantum wells. One approach to reduce and possibly eliminate the polarization-related effects is to grow III-nitride devices on crystal planes that are inclined with respect to the c-axis, i.e., on semipolar planes. In this dissertation, metalorganic chemical vapor deposition (MOCVD) has been employed for the homoepitaxial growth of GaN based LEDs on semipolar orientations. As a consequence of growing on high-quality bulk GaN substrates, the LEDs have significantly reduced threading dislocation and stacking fault densities, resulting in remarkable improvements in EQE and output power. High efficiency semipolar (1011) violet-blue and blue LEDs have been demonstrated without any intentional effort to enhance the light extraction from those devices. Optimizations of epitaxial structures have led to increased output power and external quantum efficiency. A silicone encapsulated single quantum well blue LED with peak wavelength of 444 nm with output power of 24.3 mW, external quantum efficiency of 43% and luminous efficacy of 75 lm/W (with phosphorescent coating) at 20 mA has been demonstrated. Polarization fields in strained (1011) and (112¯2) InGaN quantum wells have been experimentally determined through bias-dependent optical studies. Our results show that the polarization field flips its direction in semipolar InGaN quantum wells with large inclination angles (i.e. around 60°). This suggests that there exists a polarization

  5. White light-emitting diodes based on nonpolar and semipolar gallium nitride orientations

    NASA Astrophysics Data System (ADS)

    Demille, Natalie Fellows

    Gallium nitride has become one of the key components when fabricating white light-emitting diodes. Its use as the blue source in conjunction with a wavelength converter such as the yellow emitting phosphor YAG:Ce 3+ is a technology that is commercially available and usable for solid state lighting applications. Currently available white phosphor-based LEDs (pcLEDs) use the basal plane of wurtzite GaN as their source. Although research over the past couple decades has developed this technology into devices with good photometric performance and high reliability, the introduction of nonbasal plane wurtzite GaN orientations have benefits over basal plane GaN that can be incorporated into the white LED. The focus of this research deals with exploring white illumination on nonpolar and semipolar planes of GaN. Light extraction techniques will be described that allowed for high output powers and efficiencies on the c-plane as well as the (1100), (10 11), and (1122) planes of GaN. With higher performing devices, white pcLEDs were fabricated on c-plane, m-plane, and the (1011) semipolar plane. The novelty in the present research is producing white LEDs with nonbasal plane diodes which exhibit optical polarization anisotropy. This feature, absent on the basal plane, allows for tuning photometric quantities both electrically and optically. This is demonstrated on pcLEDs as well as dichromatic LEDs comprised solely of InGaN diodes. As a consequence of these measurements, an apparent optical polarization was seen to be occurring in the luminescence of the YAG:Ce3+ when the system absorbed linearly polarized light. Polarized emission in YAG:Ce3+ was explored by obtaining single crystals of YAG:Ce3+ with different planar orientations. The experiments led to the conclusion that crystal orientation plays no part in the optical polarization. It is suggested that the cause is a result of electric dipole transitions given by various selection rules between the Ce 3+ ion's 4f and 5d

  6. Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

    NASA Astrophysics Data System (ADS)

    Durmaz, Habibe; Nothern, Denis; Brummer, Gordie; Moustakas, Theodore D.; Paiella, Roberto

    2016-05-01

    Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a free-standing semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrate. These quantum wells are nearly free of the polarization-induced internal electric fields that severely complicate the design of nitride intersubband devices on traditional c-plane substrates. As a result, a promising bound-to-quasi-bound THz photodetector design can be implemented. Pronounced photocurrent peaks at the design frequency near 10 THz are measured, covering frequencies that are fundamentally inaccessible to existing arsenide intersubband devices due to reststrahlen absorption. This materials system provides a favorable platform to utilize the intrinsic advantages of nitride semiconductors for THz optoelectronics.

  7. Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

    NASA Astrophysics Data System (ADS)

    Monavarian, Morteza

    Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology

  8. 9 CFR 11.22 - Records required and disposition thereof.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ..., DEPARTMENT OF AGRICULTURE ANIMAL WELFARE HORSE PROTECTION REGULATIONS § 11.22 Records required and disposition thereof. (a) The management of any horse show, horse exhibition, or horse sale or auction, that contains Tennessee Walking Horses or racking horses, shall maintain for a period of at least 90...

  9. 9 CFR 11.22 - Records required and disposition thereof.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ..., DEPARTMENT OF AGRICULTURE ANIMAL WELFARE HORSE PROTECTION REGULATIONS § 11.22 Records required and disposition thereof. (a) The management of any horse show, horse exhibition, or horse sale or auction, that contains Tennessee Walking Horses or racking horses, shall maintain for a period of at least 90...

  10. 9 CFR 11.22 - Records required and disposition thereof.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ..., DEPARTMENT OF AGRICULTURE ANIMAL WELFARE HORSE PROTECTION REGULATIONS § 11.22 Records required and disposition thereof. (a) The management of any horse show, horse exhibition, or horse sale or auction, that contains Tennessee Walking Horses or racking horses, shall maintain for a period of at least 90...

  11. 9 CFR 11.22 - Records required and disposition thereof.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ..., DEPARTMENT OF AGRICULTURE ANIMAL WELFARE HORSE PROTECTION REGULATIONS § 11.22 Records required and disposition thereof. (a) The management of any horse show, horse exhibition, or horse sale or auction, that contains Tennessee Walking Horses or racking horses, shall maintain for a period of at least 90...

  12. 9 CFR 11.22 - Records required and disposition thereof.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ..., DEPARTMENT OF AGRICULTURE ANIMAL WELFARE HORSE PROTECTION REGULATIONS § 11.22 Records required and disposition thereof. (a) The management of any horse show, horse exhibition, or horse sale or auction, that contains Tennessee Walking Horses or racking horses, shall maintain for a period of at least 90...

  13. Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112{sup ¯}2) orientation

    SciTech Connect

    Kozlowski, Grzegorz Schulz, Stefan; Corbett, Brian

    2014-02-03

    We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (112{sup ¯}2) InGaN-based quantum wells (QWs) for blue (450 nm) and yellow (560 nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times.

  14. Step-induced misorientation of GaN grown on r-plane sapphire

    SciTech Connect

    Smalc-Koziorowska, J.; Dimitrakopulos, G. P.; Sahonta, S.-L.; Komninou, Ph.; Tsiakatouras, G.; Georgakilas, A.

    2008-07-14

    In the growth of nonpolar (1120) a-plane GaN on r-plane (1102) sapphire by plasma-assisted molecular beam epitaxy, misoriented crystallites are observed close to the substrate. They have average diameter {approx}10 nm and are oriented with the (0001){sub GaN} plane approximately parallel to the (2113){sub sapph.} plane and [0110]{sub GaN} parallel [1101]{sub sapph.}. This semipolar orientation is promoted by a low misfit (2.4%) between (1011){sub GaN} and (1210){sub sapph.} planes. Its introduction, after nitridation treatment, is due to GaN nucleation on (2113){sub sapph.} step facets inclined at 26 deg. relative to the r-plane. Two variants are observed, leading to twinning when they abut inside the epilayer.

  15. Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample

    NASA Astrophysics Data System (ADS)

    Hocker, Matthias; Maier, Pascal; Tischer, Ingo; Meisch, Tobias; Caliebe, Marian; Scholz, Ferdinand; Mundszinger, Manuel; Kaiser, Ute; Thonke, Klaus

    2017-02-01

    A semipolar GaInN based light-emitting diode (LED) sample is investigated by three-dimensionally resolved cathodoluminescence (CL) mapping. Similar to conventional depth-resolved CL spectroscopy (DRCLS), the spatial resolution perpendicular to the sample surface is obtained by calibration of the CL data with Monte-Carlo-simulations (MCSs) of the primary electron beam scattering. In addition to conventional MCSs, we take into account semiconductor-specific processes like exciton diffusion and the influence of the band gap energy. With this method, the structure of the LED sample under investigation can be analyzed without additional sample preparation, like cleaving of cross sections. The measurement yields the thickness of the p-type GaN layer, the vertical position of the quantum wells, and a defect analysis of the underlying n-type GaN, including the determination of the free charge carrier density. The layer arrangement reconstructed from the DRCLS data is in good agreement with the nominal parameters defined by the growth conditions.

  16. Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN.

    PubMed

    Li, Hong; Geelhaar, Lutz; Riechert, Henning; Draxl, Claudia

    2015-08-21

    Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this context. It is determined by surface energies, which are hard to access experimentally but can generally be well predicted by first-principles methods. Unfortunately, this is not necessarily so for polar and semipolar surfaces of wurtzite crystals. By extending the concept of Wulff construction, we demonstrate that ECSs can nevertheless be obtained for this class of materials. For the example of GaN, we identify different crystal shapes depending on the chemical potential, shedding light on experimentally observed GaN nanostructures.

  17. Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect

    NASA Astrophysics Data System (ADS)

    Forman, C.; Leonard, J.; Yonkee, B.; Pynn, C.; Mates, T.; Cohen, D.; Farrell, R.; Margalith, T.; DenBaars, S.; Speck, J.; Nakamura, S.

    2017-04-01

    P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages of semipolar (202̅1) and gains the polarization benefits of semipolar (202̅1̅). Here, we investigated semipolar (202̅1) InGaN-based PDLEDs in terms of their photoluminescence (PL) spectra and compositional profile. Despite concerns of the Mg memory effect degrading PDLED performance due to Mg-related non-radiative recombination centers, the PL intensities were nearly identical between the NDLED and PDLEDs, which emitted at wavelengths centered near 500 nm. Secondary ion mass spectrometry revealed that the Mg doping levels in the multiple quantum well (MQW) active region were comparable for each structure, with average values of 2.9×1018 cm-3 for the NDLED and 1.8×1018 cm-3 for the PDLED. Prior to growing the active region MQW, a 700 °C in situ anneal was carried out to reduce the average Mg concentration in the PDLED MQW to 3.7×1017 cm-3. Its hydrogen concentration remained at 5×1019 cm-3 in the p-type GaN region, which suggests that hydrogen passivation occurs during the growth of subsequent epitaxial layers in ammonia.

  18. Strain Relaxation in Semipolar III-Nitrides for Light Emitting Diode Applications

    NASA Astrophysics Data System (ADS)

    Koslow, Ingrid Larson

    Light emitting diodes (LEDs) based on the III-nitride material system (Al,In,Ga)N have been utilized in a number of commercial applications, from small Christmas tree lights to high power lightbulbs and streetlamps. Until now, all commercially available GaN-based devices have been based on the conventional c-plane (polar) orientation of the Wurtzite crystal structure, and grown heteroepitaxially on foreign substrates such as sapphire. However, the recent availability of low defect density HVPE-grown GaN substrates have opened up new possibilities to study novel crystal orientations, known as nonpolar and semipolar. The (Al,In,Ga)N material system has bandgaps ranging from 0.7 eV in the infrared out to 6.3 eV in the deep UV---and LEDs with wavelengths from roughly 365 nm (near-UV) to 550 nm (green) are commercially available. However, although blue LEDs typically have an external quantum efficiency (EQE) > 60%, at emission wavelengths beyond 500 nm the EQE drops to ≤ 30%. Similarly, although red-emitting LEDs based on AlInGaP have high efficiency, their EQE is also reduced for yellow wavelengths. This phenomenon is known as the 'Green Gap'. Although there are likely to be numerous factors responsible for this reduction in efficiency with emission wavelength in III-nitrides, a leading candidate is mismatch strain between the active region of the LED---consisting of thin layers of InGaN with at least 30% indium---and the GaN substrate, which have a significant lattice constant mismatch of > 3%. In order to improve the efficiency of green-emitting LEDs, strain relaxation mechanisms on semipolar orientations have been studied. By growing relaxed InGaN buffer layers, it is possible to change the lattice constant from that of the GaN substrates, reducing the mismatch strain in the active region itself. Multiple slip systems have been observed and studied in semipolar nitrides, leading to several sets of misfit dislocations (MDs) that result in relaxation of InGaN layers

  19. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

    NASA Astrophysics Data System (ADS)

    Shen, Chao; Lee, Changmin; Stegenburgs, Edgars; Holguin Lerma, Jorge; Khee Ng, Tien; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-04-01

    A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

  20. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112{sup ¯}2) semipolar versus (0001) polar planes

    SciTech Connect

    Ji, Yun; Liu, Wei; Chen, Rui; Tiam Tan, Swee; Zhang, Zi-Hui; Ju, Zhengang; Zhang, Xueliang; Sun, Handong; Wei Sun, Xiao; Erdem, Talha; Zhao, Yuji; DenBaars, Steven P. E-mail: volkan@stanfordalumni.org; Nakamura, Shuji; Volkan Demir, Hilmi E-mail: volkan@stanfordalumni.org

    2014-04-07

    The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112{sup ¯}2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.

  1. Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, Zhenlong; Chen, Peng; Yang, Guofeng; Xu, Zhou; Xu, Feng; Jiang, Fulong; Zhang, Rong; Zheng, Youdou

    2015-03-01

    We investigate the morphological evolution of selective area epitaxy (SAE) GaN microfacets structures on crossover stripe patterns as a function of temperature, and the emission properties of semipolar InGaN/GaN multiple quantum wells (MQWs) grown on these microstructures with semipolar facets are also studied. The shapes of inner rings gradually change from nearly rectangular to hexagonal when the GaN growth temperature elevates, as a result of growth rates and surface stability varies with elevated temperatures. Three types of semipolar facets ({1 1 -2 2}, {2 1 -3 3} and {1 -1 0 1} facets) can be identified on the inner rings of these structures, which are verified by the emission properties of semipolar InGaN/GaN MQWs. The emission wavelengths of MQWs on these semipolar facets are ordered as {1 -1 0 1} > {2 1 -3 3} > {1 1 -2 2}, which is attributed to variations of growth rate and indium incorporation on different planes during InGaN growth. Furthermore, the indium composition of MQWs changes with the morphological evolution.

  2. Temporally and spatially resolved photoluminescence investigation of (112{sup ¯}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

    SciTech Connect

    Liu, B.; Smith, R.; Athanasiou, M.; Yu, X.; Bai, J.; Wang, T.

    2014-12-29

    By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1−x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup ¯}2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

  3. High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications.

    PubMed

    Shen, Chao; Ng, Tien Khee; Leonard, John T; Pourhashemi, Arash; Nakamura, Shuji; DenBaars, Steven P; Speck, James S; Alyamani, Ahmed Y; El-Desouki, Munir M; Ooi, Boon S

    2016-06-01

    A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021¯) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3  dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications.

  4. Stacking faults and interface roughening in semipolar (202{sup ¯}1{sup ¯}) single InGaN quantum wells for long wavelength emission

    SciTech Connect

    Wu, Feng; Zhao, Yuji; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.; Romanov, Alexey

    2014-04-14

    The microstructure of InGaN single quantum wells (QWs) grown in semipolar (202{sup ¯}1{sup ¯}) orientation on GaN substrates was studied by transmission electron microscopy. Stress relaxation in the lattice mismatch In{sub x}Ga{sub 1−x}N layer was realized by forming partial misfit dislocations associated with basal plane stacking faults (BPSFs). For given composition x = 0.24, BPSFs formation was observed when the QW thickness exceeded 4 nm. The high density of partial threading dislocations that bound the BPSFs is detrimental to light-emitting device performance. Interface roughening (faceting) was observed for both upper and lower QW interfaces (more pronounced for upper interface) and was found to increase with the thickness of the QW. BPSFs had a tendency to nucleate at roughened interface valleys.

  5. Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates.

    PubMed

    Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Wu, Ming-Jui; Lai, Wei-Chih; Sheu, Jinn-Kong

    2013-09-09

    GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Si-implanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantation-free regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

  6. High Quality, Low Cost Ammonothermal Bulk GaN Substrates

    SciTech Connect

    Ehrentraut, D; Pakalapati, RT; Kamber, DS; Jiang, WK; Pocius, DW; Downey, BC; McLaurin, M; D'Evelyn, MP

    2013-12-18

    Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

  7. GaN HEMTs

    NASA Astrophysics Data System (ADS)

    Anderson, Jonathan W.; Lee, Kyoung-Keun; Piner, Edwin L.

    2012-03-01

    Gallium nitride (GaN) has enormous potential for applications in high electron mobility transistors (HEMTs) used in RF and power devices. Intrinsic device properties such as high electron mobility, high breakdown voltage, very high current density, electron confinement in a narrow channel, and high electron velocity in the 2-dimensional electron gas of the HEMT structure are due in large part to the wide band gap of this novel semiconductor material system. This presentation discusses the properties of GaN that make it superior to other semiconductor materials, and outlines the research that will be undertaken in a new program at Texas State University to advance GaN HEMT technology. This program's aim is to further innovate the exceptional performance of GaN through improved material growth processes and epitaxial structure design.

  8. AT-rich palindromes mediate the constitutional t(11;22) translocation.

    PubMed

    Edelmann, L; Spiteri, E; Koren, K; Pulijaal, V; Bialer, M G; Shanske, A; Goldberg, R; Morrow, B E

    2001-01-01

    The constitutional t(11;22) translocation is the only known recurrent non-Robertsonian translocation in humans. Offspring are susceptible to der(22) syndrome, a severe congenital anomaly disorder caused by 3&rcolon;1 meiotic nondisjunction events. We previously localized the t(11;22) translocation breakpoint to a region on 22q11 within a low-copy repeat termed "LCR22" and within an AT-rich repeat on 11q23. The LCR22s are implicated in mediating different rearrangements on 22q11, leading to velocardiofacial syndrome/DiGeorge syndrome and cat-eye syndrome by homologous recombination mechanisms. The LCR22s contain AT-rich repetitive sequences, suggesting that such repeats may mediate the t(11;22) translocation. To determine the molecular basis of the translocation, we cloned and sequenced the t(11;22) breakpoint in the derivative 11 and 22 chromosomes in 13 unrelated carriers, including two de novo cases and der(22) syndrome offspring. We found that, in all cases examined, the reciprocal exchange occurred between similar AT-rich repeats on both chromosomes 11q23 and 22q11. To understand the mechanism, we examined the sequence of the breakpoint intervals in the derivative chromosomes and compared this with the deduced normal chromosomal sequence. A palindromic AT-rich sequence with a near-perfect hairpin could form, by intrastrand base-pairing, on the parental chromosomes. The sequence of the breakpoint junction in both derivatives indicates that the exchange events occurred at the center of symmetry of the palindromes, and this resulted in small, overlapping staggered deletions in this region among the different carriers. On the basis of previous studies performed in diverse organisms, we hypothesize that double-strand breaks may occur in the center of the palindrome, the tip of the putative hairpin, leading to illegitimate recombination events between similar AT-rich sequences on chromosomes 11 and 22, resulting in deletions and loss of the palindrome, which then

  9. Morphology Control of Hot-Wall MOCVD Selective Area Grown Hexagonal GaN Pyramids

    NASA Astrophysics Data System (ADS)

    Lundskog, Anders; Forsberg, Urban; Holtz, Per Olof; Janzen, Erik

    2012-11-01

    Morphological variations of gallium polar (0001)-oriented hexagonal GaN pyramids grown by hot wall metal organic chemical vapor deposition under various growth conditions are investigated. The stability of the semipolar {1 (1) over bar 02} and nonpolar {1 (1) over bar 00} facets is particularly discussed. The presence of the {1 (1) over bar 02} facets near the apex of the pyramid was found to be controllable by tuning the absolute flow rate of ammonia during the growth Vertical nonpolar {1 (1) over bar 00} facets appeared in gallium rich conditions, which automatically were created when the growth time was prolonged beyond pyramid completion. The result was attributed to a gallium passivation of the {1 (1) over bar 00} surface.

  10. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

    SciTech Connect

    Adikimenakis, A.; Aretouli, K. E.; Tsagaraki, K.; Androulidaki, M.; Georgakilas, A.; Lotsari, A.; Dimitrakopulos, G. P. Kehagias, Th.; Komninou, Ph.

    2015-06-28

    The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structural characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5–6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.

  11. Effect of defects in oxide templates on Non-catalytic growth of GaN nanowires for high-efficiency light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hwang, Sung Won; Choi, Suk-Ho

    2016-04-01

    Two kinds of oxide templates, one with and one without undercuts, are employed to study the effect of defects in oxide templates on non-catalytic growth of GaN nanowires (NWs). GaN NWs abnormally grown from the templates containing undercuts exhibit two types of patterns: earlystage growth of premature NWs and abnormally-overgrown (~2 μm) NWs. GaN NWs grown on perfectly-symmetric template patterns are highly crystalline and have high aspect ratios (2 ~ 5), and their tops are shaped as pyramids with semipolar facets, clearly indicating hexagonal symmetry. The internal quantum efficiency of the well-grown NWs is 10% larger than that of the deformed NWs, as estimated by using photoluminescence. These results suggest that our technique is an effective approach for growing large-area-patterned, vertically-aligned, hexagonal GaN NWs without catalysts, in strong contrast to catalytic vapor-liquid-solid growth, and that good formation of the oxide templates is crucial for the growth of high-quality GaN NWs.

  12. Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

    SciTech Connect

    Kobayashi, Atsushi; Ohta, Jitsuo; Ueno, Kohei; Oshima, Masaharu; Fujioka, Hiroshi

    2013-11-04

    Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.

  13. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Smirnov, A. M.; Young, E. C.; Bougrov, V. E.; Speck, J. S.; Romanov, A. E.

    2016-01-01

    We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ˜70° for Al0.13Ga0.87N/GaN ( h 0 h ¯ 1 ) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1-xN/GaN heterostructures.

  14. GaN nanowire tip for high aspect ratio nano-scale AFM metrology (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Behzadirad, Mahmoud; Dawson, Noel; Nami, Mohsen; Rishinaramangalam, Ashwin K.; Feezell, Daniel F.; Busani, Tito L.

    2016-09-01

    In this study we introduce Gallium Nitride (GaN) nanowire (NW) as high aspect ratio tip with excellent durability for nano-scale metrology. GaN NWs have superior mechanical property and young modulus compare to commercial Si and Carbon tips which results in having less bending issue during measurement. The GaN NWs are prepared via two different methods: i) Catalyst-free selected area growth, using Metal Organic Chemical Vapor Deposition (MOCVD), ii) top-down approach by employing Au nanoparticles as the mask material in dry-etch process. To achieve small diameter tips, the semipolar planes of the NWs grown by MOCVD are etched using AZ400k. The diameter of the NWs fabricated using the top down process is controlled by using different size of nanoparticles and by Inductively Coupled Plasma etching. NWs with various diameters were manipulated on Si cantilevers using Focus Ion Beam (FIB) to make tips for AFM measurement. A Si (110) substrate containing nano-scale grooves with vertical 900 walls were used as a sample for inspection. AFM measurements were carried out in tapping modes for both types of nanowires (top-down and bottom-up grown nanowires) and results are compared with conventional Si and carbon nanotube tips. It is shown our fabricated tips are robust and have improved edge resolution over conventional Si tips. GaN tips made with NW's fabricated using our top down method are also shown to retain the gold nanoparticle at tip, which showed enhanced field effects in Raman spectroscopy.

  15. Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Tian, Yingdong; Yan, Jianchang; Zhang, Yun; Zhang, Yonghui; Chen, Xiang; Guo, Yanan; Wang, Junxi; Li, Jinmin

    2016-05-01

    We demonstrated for the first time the formation and study of semi-polar AlGaN multiple-quantum-wells (MQWs) grown on highly regular hexagonal AlN nanopyramids. The AlN nanopyramids were obtained by a metal-organic chemical vapor phase deposition regrowth method on a well-ordered AlN nanorod array prepared by a top-down etching process. The growth mechanism of the AlN nanopyramids was ascribed to the slow growth of the (101&cmb.macr;1) semi-polar plane, which resulted from hydrogen passivation. Beneath the semi-polar facets, air voids were formed. This was attributed to the insufficient delivery of gas reactants to the bottom of the nanorods during the growth process. The polarization effect in semi-polar AlGaN MQWs was numerically calculated. The results showed that the internal electric field (IEF) in the semi-polar MQWs was remarkably reduced by 80% in comparison with c-plane MQWs. Power dependent photoluminescence indicated that the semi-polar AlGaN MQWs had negligible wavelength shifts that resulted from the reduced IEF, which was in accordance with theoretical predictions. In addition, epitaxial strain was greatly relieved in the AlN regrowth layer, which was revealed from the peak shift of the E2(high) phonon using micro-Raman spectroscopy. The advantages of AlGaN-based hexagonal nanopyramid semi-polar three dimensional nanostructures would lead to a large improvement of output power in UV-LEDs.

  16. Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

    NASA Astrophysics Data System (ADS)

    Domagala, J. Z.; Smalc-Koziorowska, J.; Iwinska, M.; Sochacki, T.; Amilusik, M.; Lucznik, B.; Fijalkowski, M.; Kamler, G.; Grzegory, I.; Kucharski, R.; Zajac, M.; Bockowski, M.

    2016-12-01

    Study on the sources of stress in HVPE-GaN layer crystallized on 1-in. ammonothermally grown GaN seed is presented in this paper. Characterization by means of X-ray diffraction and transmission electron microscopy is performed. HVPE-GaN samples of high quality and those with visible quality deterioration are investigated on c-plane and m-plane cross-sections. Special attention is paid to HVPE material growing in semi-polar and non-polar directions on the edges of the seed and the growing layer. It is shown that this material generates significant stress leading to a structural deterioration of HVPE-GaN growing in the c-direction.

  17. Molecular sublocalization and characterization of the 11; 22 translocation breakpoint in a malignant rhabdoid tumor

    SciTech Connect

    Newsham, I.; Daub, D.; Besnard-Guerin, C.; Cavenee, W. )

    1994-02-01

    Malignant rhabdoid tumors are extremely aggressive soft-tissue sarcomas that tend to be widely metastatic at diagnosis. These tumors were first described as variants of the kidney neoplasm Wilms' tumor, although tumors of similar clinicopathologic features have been cited in a variety of extrarenal sites. Here, the authors have characterized the chromosomal translocation t(11;22)(p15.5;q11.23) from a retroperitoneal rhabdoid tumor. Somatic cell hybrids with segregated copies of the derivative 11 and derivative 22 chromosomes allowed sublocalization of the chromosome 11 breakpoint to a 1- to 2-Mb region between the proximal marker D11S12 and the distal locus tyrosine hydroxylase (TH). Translocation-associated aberrant fragments were identified by pulsed-field gel electrophoresis, with the smallest resulting from BssHII digestion as detected with a probe for TH. These data indicate that the locus or loci disrupted by this genetic abnormality might lie less than 60 kb proximal to this marker and place it in the chromosomal vicinity of genes involved in the etiologies of rhabdomyosarcoma, Wilms' tumor, and the congenital overgrowth disorder, Beckwith-Wiedemann syndrome. Analysis of two other tumor-associated loci, EWS1 and NF2, that have been mapped to the general region of 22q11.2 indicated that they were not involved in this translocation breakpoint. Isolation of the genes present at this translocation junction on both chromosomes 11 and 22 may yield important clinicopathologic and genetic markers for this enigmatic tumor as well as other pediatric diseases. 45 refs., 3 figs.

  18. 41 CFR 302-11.22 - May the 2-year time limitation be extended by my agency?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 41 Public Contracts and Property Management 4 2011-07-01 2011-07-01 false May the 2-year time... Federal Travel Regulation System RELOCATION ALLOWANCES RESIDENCE TRANSACTION ALLOWANCES 11-ALLOWANCES FOR EXPENSES INCURRED IN CONNECTION WITH RESIDENCE TRANSACTIONS General Rules Time Limitations § 302-11.22...

  19. 41 CFR 302-11.22 - May the 1-year time limitation be extended by my agency?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 41 Public Contracts and Property Management 4 2013-07-01 2012-07-01 true May the 1-year time... Federal Travel Regulation System RELOCATION ALLOWANCES RESIDENCE TRANSACTION ALLOWANCES 11-ALLOWANCES FOR EXPENSES INCURRED IN CONNECTION WITH RESIDENCE TRANSACTIONS General Rules Time Limitations § 302-11.22...

  20. 41 CFR 302-11.22 - May the 1-year time limitation be extended by my agency?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 41 Public Contracts and Property Management 4 2014-07-01 2014-07-01 false May the 1-year time... Federal Travel Regulation System RELOCATION ALLOWANCES RESIDENCE TRANSACTION ALLOWANCES 11-ALLOWANCES FOR EXPENSES INCURRED IN CONNECTION WITH RESIDENCE TRANSACTIONS General Rules Time Limitations § 302-11.22...

  1. 41 CFR 302-11.22 - May the 2-year time limitation be extended by my agency?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 41 Public Contracts and Property Management 4 2010-07-01 2010-07-01 false May the 2-year time... Federal Travel Regulation System RELOCATION ALLOWANCES RESIDENCE TRANSACTION ALLOWANCES 11-ALLOWANCES FOR EXPENSES INCURRED IN CONNECTION WITH RESIDENCE TRANSACTIONS General Rules Time Limitations § 302-11.22...

  2. 41 CFR 302-11.22 - May the 1-year time limitation be extended by my agency?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 41 Public Contracts and Property Management 4 2012-07-01 2012-07-01 false May the 1-year time... Federal Travel Regulation System RELOCATION ALLOWANCES RESIDENCE TRANSACTION ALLOWANCES 11-ALLOWANCES FOR EXPENSES INCURRED IN CONNECTION WITH RESIDENCE TRANSACTIONS General Rules Time Limitations § 302-11.22...

  3. Solubility and crystallographic facet tailoring of (GaN)(1-x)(ZnO)(x) pseudobinary solid-solution nanostructures as promising photocatalysts.

    PubMed

    Li, Jing; Liu, Baodan; Yang, Wenjin; Cho, Yujin; Zhang, Xinglai; Dierre, Benjamin; Sekiguchi, Takashi; Wu, Aimin; Jiang, Xin

    2016-02-14

    (GaN)1-x(ZnO)x solid-solution nanostructures with superior crystallinity, large surface areas and visible light absorption have been regarded as promising photocatalysts for overall water splitting to produce H2. In this work, we report the preparation of (GaN)1-x(ZnO)x solid-solution nanorods with a high ZnO solubility up to 95% via a two-step synthetic route, which starts from a sol-gel reaction and follows with a nitridation process. Moreover, we clearly demonstrated that the crystallographic facets of (GaN)1-x(ZnO)x solid-solution nanorods can be finely tailored from non-polar {10̄10} to semipolar {10̄11} and then finally to mixed {10̄1} and polar {000̄1} by carefully controlling the growth temperature and nitridation time. Correspondingly, the ZnO content in the GaN lattice can be achieved in the range of ∼25%-95%. Room-temperature cathodoluminescence (CL) measurements on the three types of (GaN)1-x(ZnO)x solid-solution nanorods indicate that the minimum band-gap of 2.46 eV of the solid-solution nanorods is achieved under a ZnO solubility of 25%. The efficiency and versatility of our strategy in the band-gap and facet engineering of (GaN)1-x(ZnO)x solid-solution nanorods will enhance their promising photocatalytic utilizations like an overall water splitting for H2 production under visible-light irradiation.

  4. Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

    NASA Astrophysics Data System (ADS)

    Okur, S.; Izyumskaya, N.; Zhang, F.; Avrutin, V.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoç, H.; Özgür, Ü.

    2014-03-01

    The optical quality of semipolar (1 101)GaN layers was explored by time- and polarization-resolved photoluminescence spectroscopy. High intensity bandedge emission was observed in +c-wing regions of the stripes as a result of better structural quality, while -c-wing regions were found to be of poorer optical quality due to basal plane and prismatic stacking faults (BSFs and PSFs) in addition to a high density of TDs. The high optical quality region formed on the +cwings was evidenced also from the much slower biexponential PL decays (0.22 ns and 1.70 ns) and an order of magnitude smaller amplitude ratio of the fast decay (nonradiative origin) to the slow decay component (radiative origin) compared to the -c-wing regions. In regard to defect-related emission, decay times for the BSF and PSF emission lines at 25 K (~ 0.80 ns and ~ 3.5 ns, respectively) were independent of the excitation density within the range employed (5 - 420 W/cm2), and much longer than that for the donor bound excitons (0.13 ns at 5 W/cm2 and 0.22 ns at 420 W/cm2). It was also found that the emission from BSFs had lower polarization degree (0.22) than that from donor bound excitons (0.35). The diminution of the polarization degree when photogenerated carriers recombine within the BSFs is another indication of the negative effects of stacking faults on the optical quality of the semipolar (1101)GaN. In addition, spatial distribution of defects in semipolar (1101)-oriented InGaN active region layers grown on stripe patterned Si substrates was investigated using near-field scanning optical microscopy. The optical quality of -c- wing regions was found to be worse compared to +c-wing regions due to the presence of higher density of stacking faults and threading dislocations. The emission from the +c-wings was very bright and relatively uniform across the sample, which is indicative of a homogeneous In distribution.

  5. Stable vicinal step orientations in m-plane GaN

    NASA Astrophysics Data System (ADS)

    Kelchner, K. M.; Kuritzky, L. Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2015-02-01

    The performance of InxGa1-xN-based m-plane LEDs and laser diodes grown by metalorganic chemical vapor deposition on bulk GaN substrates is currently limited by lower indium uptake and inhomogeneous linewidth broadening in the blue spectrum compared to semipolar planes and c-plane. Linewidth broadening is partially attributed to inhomogeneous indium composition that is associated with template morphology. We investigate the morphological evolution of homoepitaxial GaN growth on bulk m-plane substrates in three co-loaded miscut orientations: nominally on-axis, 1° in the -c-direction (-c-miscut), and 1° in the a-direction (a-miscut). Atomic force microscopy reveals four-sided pyramidal hillocks for on-axis growth with faces inclined toward the [ 11 2 bar 0 ]a-axis (a-faces) and the [0001] c-axis (c-faces). The a-faces exhibit steps oriented in an a+c direction with longer terrace widths than the c-face steps. The -c-miscut template growth sometimes forms diagonal striations, characterized by regions with stable a+c step direction. The a-miscut template growth exhibits meandering steps oriented in the a±c directions that bunch to form diagonal striations. These results reveal that c-direction steps are unstable compared to a±c directions. We further demonstrate that m-plane GaN substrates with combined a+c miscut lead to narrower InxGa1-xN photoluminescence emission spectra in blue with enhanced indium incorporation.

  6. Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

    NASA Astrophysics Data System (ADS)

    Chiu, Ching-Hsueh; Lin, Da-Wei; Lin, Chien-Chung; Li, Zhen-Yu; Chang, Wei-Ting; Hsu, Hung-Wen; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; Liao, Wei-Tsai; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Sawaki, Nobuhiko

    2011-01-01

    We present a study of semi-polar (1101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

  7. Clustered 11q23 and 22q11 Breakpoints and 3:1 Meiotic Malsegregation in Multiple Unrelated t(11;22) Families

    PubMed Central

    Shaikh, Tamim H.; Budarf, Marcia L.; Celle, Livija; Zackai, Elaine H.; Emanuel, Beverly S.

    1999-01-01

    Summary The t(11;22) is the only known recurrent, non-Robertsonian constitutional translocation. We have analyzed t(11;22) balanced-translocation carriers from multiple unrelated families by FISH, to localize the t(11;22) breakpoints on both chromosome 11 and chromosome 22. In 23 unrelated balanced-translocation carriers, the breakpoint was localized within a 400-kb interval between D22S788 (N41) and ZNF74, on 22q11. Also, 13 of these 23 carriers were tested with probes from chromosome 11, and, in each, the breakpoint was localized between D11S1340 and APOA1, on 11q23, to a region ⩽185 kb. Thus, the breakpoints on both chromosome 11 and chromosome 22 are clustered in multiple unrelated families. Supernumerary-der(22)t(11;22) syndrome can occur in the progeny of balanced-t(11;22) carriers, because of malsegregation of the der(22). There has been speculation regarding the mechanism by which the malsegregation occurs. To elucidate this mechanism, we have analyzed 16 of the t(11;22) families, using short tandem-repeat–polymorphism markers on both chromosome 11 and chromosome 22. In all informative cases the proband received two of three alleles, for markers above the breakpoint on chromosome 22 and below the breakpoint on chromosome 11, from the t(11;22)-carrier parent. These data strongly suggest that 3:1 meiosis I malsegregation in the t(11;22) balanced-translocation–carrier parent is the mechanism in all 16 families. Taken together, these results establish that the majority of t(11;22) translocations occur within the same genomic intervals and that the majority of supernumerary-der(22) offspring result from a 3:1 meiosis I malsegregation in the balanced-translocation carrier. PMID:10577913

  8. Adamantinoma-like Ewing's sarcoma and Ewing's-like adamantinoma. The t(11; 22), t(21; 22) status.

    PubMed

    Hauben, E; van den Broek, L C; Van Marck, E; Hogendoorn, P C

    2001-09-01

    Adamantinoma of the long bones and Ewing's sarcoma are two malignant tumours between which, at first sight, there seems to be no morphological and clinical relationship. Both tumours, however, are known to express cytokeratins. Adamantinoma is a tumour of true epithelial nature, predominantly expressing cytokeratins 14 and 19. Ewing's sarcoma, believed to be from neuroectodermal origin, like other mesenchymal tumours, can aberrantly express cytokeratin 8 and 18. In the literature there are some reports of tumours showing clinical and/or morphological overlap between adamantinoma and Ewing's sarcoma, suggesting a possible relationship. These studies are mostly based on the epithelioid configuration of these lesions and their cytokeratin expression on immunohistochemistry. This raises the question of whether there is occasionally a morphological similarity between adamantinoma and Ewing's sarcoma, or whether there is a common genetic background. The Ewing's sarcoma/primitive peripheral neuroectodermal tumour (PNET) family is characterized in 90-95% of cases by a t(11; 22) and in 5-10% of cases by t(21; 22). In the few reports in the literature on cytogenetic investigations on adamantinoma, these translocations were never found using classical karyotyping. This study investigated the putative presence of t(11; 22) and t(21; 22) in 14 cases of adamantinoma by RT-PCR. These translocations were not found in any of these cases. The results support the view that these tumours are genetically and clinically distinct, but may eventually show overlapping morphological and immunohistochemical features.

  9. Multi-color broadband visible light source via GaN hexagonal annular structure

    PubMed Central

    Ko, Young-Ho; Song, Jie; Leung, Benjamin; Han, Jung; Cho, Yong-Hoon

    2014-01-01

    Multi-color and broadband visible emission was realized thorough the hexagonal annular structure of GaN. The annular structure fabricated by selective-area growth emitted purple, blue and green color-emission from the multi-facets. The hexagonal annular structure provided various sidewalls of {101} and {112} semi-polar facets, and (0001) polar facet. From the cathodoluminescence study, the (0001) plane had the longest wavelength of 525 nm, and the {101} facet of 440 nm peak wavelength had longer wavelength emission than the {112} of 412 nm peak wavelength. The origin of longer wavelength emission of {101} was mostly due to high In-composition, as well as slightly larger well thickness, which means that {101} facet has higher In-incorporation efficiency. Various In-composition of each facet provided multi-color and broadband emission with the international commission on illumination (CIE) of (0.22, 0.45) and high emission efficiency. The hexagonal annular structure becomes building blocks for highly efficient broadband visible lighting sources. PMID:24981889

  10. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy

    NASA Astrophysics Data System (ADS)

    Pynn, C. D.; Kowsz, S. J.; Oh, S. H.; Gardner, H.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-07-01

    The performance of multiple quantum well green and yellow semipolar light-emitting diodes (LEDs) is limited by relaxation of highly strained InGaN-based active regions and the subsequent formation of nonradiative defects. Limited area epitaxy was used to block glide of substrate threading dislocations and to reduce the density of misfit dislocations (MDs) directly beneath the active region of (20 2 ¯ 1 ) LEDs. Devices were grown and fabricated on a 1D array of narrow substrate mesas to limit the MD run length. Reducing the mesa width from 20 μm to 5 μm lowered the density of basal plane and non-basal plane MDs on the mesas and limited the number of defect-generating dislocation intersections. This improvement in material quality yielded a 73% enhancement in peak external quantum efficiency for the devices with the narrowest mesas compared to the devices with the widest mesas.

  11. Semipolar (202̅3) nitrides grown on 3C-SiC/(001) Si substrates

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Presa, S.; Akhter, M.; Maaskant, P. P.; Corbett, B.; Parbrook, P. J.

    2015-12-01

    Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al0.5Ga0.5N/AlN interlayers were employed to produce a single (202̅3) GaN surface orientation. Specular crack-free GaN layers showed undulations along [11̅0]{}3{{C}-{SiC}/{Si}} with a root mean square roughness of about 13.5 nm (50 × 50 μm2). The orientation relationship determined by x-ray diffraction (XRD) was found to be [1̅21̅0]GaN ∥[11̅0]{}3{{C}-{SiC}/{Si}} and [3̅034]GaN ∥[110]3C - SiC/Si . Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (202̅3) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm-2).

  12. Built-in electric field in ZnO based semipolar quantum wells grown on (1012) ZnO substrates

    SciTech Connect

    Chauveau, J.-M.; Xia, Y.; Roland, B.; Vinter, B.; Ben Taazaet-Belgacem, I.; Teisseire, M.; Nemoz, M.; Brault, J.; Damilano, B.; Leroux, M.

    2013-12-23

    We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (1012) R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO is minimal for this growth orientation. The photoluminescence properties evidence a quantum confined Stark effect with an internal electric field estimated to 430 kV/cm for a 17% Mg content in the barriers. The quantum well emission is strongly polarized along the 1210 direction and a comparison with the semipolar bulk ZnO luminescence polarization points to the effect of the confinement.

  13. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.

    PubMed

    Zhao, Wan-Ru; Weng, Guo-En; Wang, Jian-Yu; Zhang, Jiang-Yong; Liang, Hong-Wei; Sekiguchi, Takashi; Zhang, Bao-Ping

    2015-12-01

    InGaN/GaN multi-quantum wells (MQWs) are grown on (0001) sapphire substrates by metal organic chemical vapor deposition (MOCVD) with special growth parameters to form V-shaped pits simultaneously. Measurements by atomic force microscopy (AFM) and transmission electron microscopy (TEM) demonstrate the formation of MQWs on both (0001) and ([Formula: see text]) side surface of the V-shaped pits. The latter is known to be a semi-polar surface. Optical characterizations together with theoretical calculation enable us to identify the optical transitions from these MQWs. The layer thickness on ([Formula: see text]) surface is smaller than that on (0001) surface, and the energy level in the ([Formula: see text]) semi-polar quantum well (QW) is higher than in the (0001) QW. As the sample temperature is increased from 15 K, the integrated cathodoluminescence (CL) intensity of (0001) MQWs increases first and then decreases while that of the ([Formula: see text]) MQWs decreases monotonically. The integrated photoluminescence (PL) intensity of (0001) MQWs increases significantly from 15 to 70 K. These results are explained by carrier injection from ([Formula: see text]) to (0001) MQWs due to thermal excitation. It is therefore concluded that the emission efficiency of (0001) MQWs at high temperatures can be greatly improved due to the formation of semi-polar MQWs.

  14. GaN High Power Devices

    SciTech Connect

    PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

    2000-07-17

    A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

  15. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    NASA Astrophysics Data System (ADS)

    Myzaferi, A.; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-08-01

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a ( 20 2 ¯ 1 ) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  16. Bulk ammonothermal GaN

    NASA Astrophysics Data System (ADS)

    Dwiliński, R.; Doradziński, R.; Garczyński, J.; Sierzputowski, L. P.; Puchalski, A.; Kanbara, Y.; Yagi, K.; Minakuchi, H.; Hayashi, H.

    2009-05-01

    In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10 3 cm -2) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m, whereas better crystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec.

  17. Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

    NASA Astrophysics Data System (ADS)

    Lee, S. C.; Youngblood, N.; Jiang, Y. B.; Peterson, E. J.; Stark, C. J. M.; Detchprohm, T.; Wetzel, C.; Brueck, S. R. J.

    2015-12-01

    The incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c-phase inside a chevron-shaped h-phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and ( 1 1 ¯ 01 ) facets at both edges. A stack of five, ˜3 nm-thick, InxGa1-xN/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c-phase region up to the QWs keeps extremely small misfit (˜0.002) to the fully relaxed h-GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. The In incorporation on a strained non-polar (001) of c-GaN is comparable with that on totally relaxed semi-polar ( 1 1 ¯ 01 ) of h-GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c-InxGa1-xN/GaN QWs on Si(001) in photoluminescence.

  18. Bulk GaN Ion Cleaving

    NASA Astrophysics Data System (ADS)

    Moutanabbir, O.; Gösele, U.

    2010-05-01

    Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the large scale exploitation of these potential technologies. In this paper, we discuss some engineering issues involved in the application of the ion-cut process to split a thin layer from 2-inch freestanding GaN. This process combines the implantation of light ions and wafer bonding and can possibly be used to reduce the cost of the fabrication of GaN-based devices by allowing the transfer of several bulk quality thin layers from the same donor wafer. To achieve this multi-layer transfer several conditions must be fulfilled. Here issues related to bulk GaN surface irregularities and wafer bowing are discussed. We also describe a method to circumvent most of these problems and achieve high quality bonding.

  19. Optical properties of GaN pyramids

    SciTech Connect

    Zeng, K.C.; Lin, J.Y.; Jiang, H.X.; Yang, W.

    1999-03-01

    Picosecond time-resolved photoluminescence (PL) spectroscopy has been used to investigate the optical properties of GaN pyramids overgrown on hexagonal-patterned GaN(0001) epilayers on sapphire and silicon substrates with AlN buffer layers. We found that: (i) the release of the biaxial compressive strain in GaN pyramids on GaN/AlN/sapphire substrate led to a 7 meV redshift of the spectral peak position with respect to the strained GaN epilayer grown under identical conditions; (ii) in the GaN pyramids on GaN/AlN/sapphire substrate, strong band edge transitions with much narrower linewidths than those in the GaN epilayer have been observed, indicating the improved crystalline quality of the overgrown pyramids; (iii) PL spectra taken from different parts of the pyramids revealed that the top of the pyramid had the highest crystalline quality; and (iv) the presence of strong band-to-impurity transitions in the pyramids were primarily due to the incorporation of the oxygen and silicon impurities from the SiO{sub 2} mask. {copyright} {ital 1999 American Institute of Physics.}

  20. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    NASA Astrophysics Data System (ADS)

    Wang, Y. D.; Zang, K. Y.; Chua, S. J.; Tripathy, S.; Chen, P.; Fonstad, C. G.

    2005-12-01

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  1. The Formation and Characterization of GaN Hexagonal Pyramids

    NASA Astrophysics Data System (ADS)

    Zhang, Shi-Ying; Xiu, Xiang-Qian; Lin, Zeng-Qin; Hua, Xue-Mei; Xie, Zi-Li; Zhang, Rong; Zheng, You-Dou

    2013-05-01

    GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method. Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-sized pyramids. Hexagonal pyramids on the etched GaN with well-defined {101¯1¯} facets and very sharp tips are formed. High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality, and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN. The cathodoluminescence intensity of GaN after etching is significantly increased by three times, which is attributed to the reduction in the internal reflection, high-quality GaN with pyramids and the Bragg effect.

  2. Mushroom structure of GaN template for epitaxial growth of GaN

    NASA Astrophysics Data System (ADS)

    Lee, Sung Bo; Kwon, Tae-Wan; Park, Jungwon; Jin Choi, Won; Sung Park, Hae

    2012-07-01

    In the present study, we show the formation of mushroom morphology produced by a ramp anneal of a low-temperature GaN buffer layer. Structural analysis by transmission electron microscopy indicates that the cap of the mushroom has the stable wurtzitic GaN structure, whereas the stem possesses the metastable zinc-blende structure. With the air gap introduced between the substrate and the cap of the mushroom structure, threading dislocations propagate along its stem. The formation of the mushroom morphology is suggested to result from the nucleation of wurtzitic GaN on the surface of the low-temperature buffer layer during the ramp anneal, followed by mass transport of GaN from the buffer layer, which remains zinc-blende during the anneal, to the surface, because wurtzitic GaN has the lower structure energy than zinc-blende GaN. This study extends limits of the conventional use of the buffer layer, laying the foundation for the development of low-cost recipes for achieving GaN templates with a low density of threading dislocations.

  3. Theoretical study of gallium nitride molecules, GaN2 and GaN4.

    PubMed

    Tzeli, Demeter; Theodorakopoulos, Giannoula; Petsalakis, Ioannis D

    2008-09-18

    The electronic and geometric structures of gallium dinitride GaN 2, and gallium tetranitride molecules, GaN 4, were systematically studied by employing density functional theory and perturbation theory (MP2, MP4) in conjunction with the aug-cc-pVTZ basis set. In addition, for the ground-state of GaN 4( (2)B 1) a density functional theory study was carried out combining different functionals with different basis sets. A total of 7 minima have been identified for GaN 2, while 37 structures were identified for GaN 4 corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces and bonding mechanisms for some low-lying electronic states of GaN 4. The dissociation energy of the ground-state GaN 2 ( X (2)Pi) is 1.1 kcal/mol with respect to Ga( (2)P) + N 2( X (1)Sigma g (+)). The ground-state and the first two excited minima of GaN 4 are of (2)B 1( C 2 v ), (2)A 1( C 2 v , five member ring), and (4)Sigma g (-)( D infinityh ) symmetry, respectively. The dissociation energy ( D e) of the ground-state of GaN 4, X (2)B 1, with respect to Ga( (2)P) + 2 N 2( X (1)Sigma g (+)), is 2.4 kcal/mol, whereas the D e of (4)Sigma g (-) with respect to Ga( (4)P) + 2 N 2( X (1)Sigma g (+)) is 17.6 kcal/mol.

  4. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

    SciTech Connect

    Yin, Yao; Sun, Huabin; Chen, Peng; Sang, Liwen; Dierre, Benjamin; Sumiya, Masatomo; Sekiguchi, Takashi; Zheng, Youdou; Shi, Yi

    2015-05-15

    The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, which influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.

  5. Epitaxial relationship of semipolar s-plane (1101) InN grown on r-plane sapphire

    SciTech Connect

    Dimitrakopulos, G. P.

    2012-07-02

    The heteroepitaxy of semipolar s-plane (1101) InN grown directly on r-plane sapphire by plasma-assisted molecular beam epitaxy is studied using transmission electron microscopy techniques. The epitaxial relationship is determined to be (1101){sub InN} Parallel-To (1102){sub Al{sub 2O{sub 3}}}, [1120]{sub InN} Parallel-To [2021]{sub Al{sub 2O{sub 3}}}, [1102]{sub InN}{approx} Parallel-To [0221]{sub Al{sub 2O{sub 3}}}, which ensures a 0.7% misfit along [1120]{sub InN}. Two orientation variants are identified. Proposed geometrical factors contributing to the high density of basal stacking faults, partial dislocations, and sphalerite cubic pockets include the misfit accommodation and reduction, as well as the accommodation of lattice twist.

  6. Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures

    SciTech Connect

    Neuschl, B. Helbing, J.; Thonke, K.

    2014-11-14

    The optical absorption of indium gallium nitride (InGaN)/GaN multi quantum wells (QWs) is analyzed theoretically and experimentally. For different sample structures, either planar or three-dimensional, including QWs with different tilts relative to the (0001) plane of the wurtzite crystal, the room temperature absorption spectra were measured. We observe increasing absorption for larger indium content in the active zone and for increasing QW thickness. The semipolar structures with their reduced internal electric field are favorable with respect to the spectral absorption when compared with polar samples. Numerical k ⋅ p based simulations for quantum wells with variable thickness, indium content, and orientation are in accordance with the experimental results. By taking all QW energy eigenstates in all bands as well as the orientation dependent transition probabilities into account, the spectral absorption for arbitrary sample structures can be calculated.

  7. Anisotropic chemical etching of semipolar [1011]/[101+1] ZnO crystallographic planes: polarity versus dangling bonds.

    PubMed

    Palacios-Lidón, E; Pérez-García, B; Vennéguès, P; Colchero, J; Muñoz-Sanjosé, V; Zúñiga-Pérez, J

    2009-02-11

    ZnO thin films grown by metal-organic vapor phase epitaxy along the nonpolar [formula: see text] direction and exhibiting semipolar [formula: see text] facets have been chemically etched with HCl. In order to get an insight into the influence of the ZnO wurtzite structure in the chemical reactivity of the material, Kelvin probe microscopy and convergent beam electron diffraction have been employed to unambiguously determine the absolute polarity of the facets, showing that [formula: see text] facets are unstable upon etching in an HCl solution and transform into [formula: see text] planes. In contrast, [formula: see text] facets undergo homogeneous chemical etching perpendicular to the initial crystallographic plane. The observed etching behavior has been explained in terms of surface oxygen dangling bond density, suggesting that the macroscopic polarity plays a secondary role in the etching process.

  8. Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

    SciTech Connect

    Frentrup, Martin Wernicke, Tim; Stellmach, Joachim; Kneissl, Michael; Hatui, Nirupam; Bhattacharya, Arnab

    2013-12-07

    In group-III-nitride heterostructures with semipolar or nonpolar crystal orientation, anisotropic lattice and thermal mismatch with the buffer or substrate lead to a complex distortion of the unit cells, e.g., by shearing of the lattice. This makes an accurate determination of lattice parameters, composition, and strain state under assumption of the hexagonal symmetry impossible. In this work, we present a procedure to accurately determine the lattice constants, strain state, and composition of semipolar heterostructures using high resolution X-ray diffraction. An analysis of the unit cell distortion shows that four independent lattice parameters are sufficient to describe this distortion. Assuming only small deviations from an ideal hexagonal structure, a linear expression for the interplanar distances d{sub hkl} is derived. It is used to determine the lattice parameters from high resolution X-ray diffraction 2ϑ-ω-scans of multiple on- and off-axis reflections via a weighted least-square fit. The strain and composition of ternary alloys are then evaluated by transforming the elastic parameters (using Hooke's law) from the natural crystal-fixed coordinate system to a layer-based system, given by the in-plane directions and the growth direction. We illustrate our procedure taking an example of (112{sup ¯}2) Al{sub κ}Ga{sub 1−κ}N epilayers with Al-contents over the entire composition range. We separately identify the in-plane and out-of-plane strains and discuss origins for the observed anisotropy.

  9. Resonantly enhanced selective photochemical etching of GaN

    NASA Astrophysics Data System (ADS)

    Trichas, E.; Kayambaki, M.; Iliopoulos, E.; Pelekanos, N. T.; Savvidis, P. G.

    2009-04-01

    Wavelength dependent photochemical etching of GaN films reveals a strong resonant enhancement of the photocurrent at the GaN gap, in close agreement with the excitonic absorption profile of GaN. The corresponding etching rate of GaN strongly correlates with the measured photocurrent. No photocurrent, nor etching is observed for AlGaN films under same excitation conditions. The method could pave the way to the development of truly selective etching of GaN on AlGaN for the fabrication of nitride based optoelectronic devices.

  10. Growth of self-standing GaN substrates

    NASA Astrophysics Data System (ADS)

    Lee, Hyun-Jae; Fujii, Katsushi; Goto, Takenari; Kim, Chinkyo; Chang, Jiho; Hong, Soon-Ku; Cho, Meoungwhan; Yao, Takafumi

    2010-03-01

    Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.

  11. A chromosome 10 variant with a 12 Mb inversion [inv(10)(q11.22q21.1)] identical by descent and frequent in the Swedish population.

    PubMed

    Entesarian, Miriam; Carlsson, Birgit; Mansouri, Mahmoud Reza; Stattin, Eva-Lena; Holmberg, Eva; Golovleva, Irina; Stefansson, Hreinn; Klar, Joakim; Dahl, Niklas

    2009-03-01

    We identified a paracentric inversion of chromosome 10 [inv(10)(q11.22q21.1)] in 0.20% of Swedish individuals (15/7,439) referred for cytogenetic analysis. A retrospective analysis of 8,896 karyotypes from amniocenteses in Sweden revealed a carrier frequency of 0.079% (7/8,896) for the inversion. Cloning and detailed analysis of the inversion breakpoint regions show enrichment for interspersed repeat elements and AT-stretches. The centromeric breakpoint coincides with that of a predicted inversion from HapMap data, which suggests that this region is involved in several chromosome 10 variants. No known gene or predicted transcript are disrupted by the inversion which spans approximately 12 Mb. Carriers from four non-related Swedish families have identical inversion breakpoints and haplotype analysis confirmed that the rearrangement is identical by descent. Diagnosis was retrieved in 6 out of the 15 carriers referred for cytogenetic analysis. No consistent phenotype was found to be associated with the inversion. Our study demonstrates that the inv(10)(q11.22q21.1) is a rare and inherited chromosome variant with a broad geographical distribution in Sweden.

  12. Pallister-Killian syndrome: tetrasomy of 12pter-->12p11.22 in a boy with an analphoid, inverted duplicated marker chromosome.

    PubMed

    Huang, X-L; Isabel de Michelena, M; Leon, E; Maher, T A; McClure, R; Milunsky, A

    2007-11-01

    Supernumerary marker chromosomes (SMCs) without detectable alphoid DNA are predicted to have a neocentromere and have been referred to as mitotically stable neocentromere marker chromosomes (NMCs). Here we report the molecular cytogenetic characterization of a new case of Pallister-Killian syndrome (PKS) in a boy with an analphoid, inverted duplicated NMC derived from 12pter-->12p11.22 in his fibroblasts by using high-resolution comparative genetic hybridization (HR-CGH), multiplex fluorescent in situ hybridization (FISH) and bacterial artificial chromosome (BAC)-FISH mapping analyses with various alpha-satellite DNA probes, subtelomere probes and BAC-DNA probes. Precise identification of SMCs and NMCs is of essential importance in genetic counseling. HR-CGH is a more informative and often a faster way of precisely identifying the origin of SMCs. This case is the third report of PKS with an NMC containing an inverted duplication of partial 12p with available clinical data. These observations may help to determine the critical region for PKS and the mechanisms leading to the origin of the NMC derived from 12pter-->12p11.22 - a region that appears to be susceptible to the formation of neocentromeres. The use of subtelomeric probe PCP12p in buccal cells appears superior to the use of the centromere probe D12Z3 for the diagnosis of the PKS.

  13. Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

    SciTech Connect

    Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong; Oehler, Fabrice; Kappers, Menno J.; Oliver, Rachel A.

    2015-08-24

    A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.

  14. GaN membrane MSM ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) <111> oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  15. X-linked mental retardation with neonatal hypotonia in a French family (MRX15): Gene assignment to Xp11.22-Xp21.1

    SciTech Connect

    Raynaud, M.; Dessay, B.; Ayrault, A.D.

    1996-07-12

    Linkage analysis was performed in a family with non-specific X-linked mental retardation (MRX 15). Hypotonia in infancy was the most remarkable physical manifestation. The severity of mental deficiency was variable among the patients, but all of them had poor or absent speech. Significant lod scores at a recombination fraction of zero were detected with the marker loci DXS1126, DXS255, and DXS573 (Zmax = 2.01) and recombination was observed with the two flanking loci DXS164 (Xp21.1) and DXS988 (Xp11.22), identifying a 17 cM interval. This result suggests a new gene localization in the proximal Xp region. In numerous families with non-specific X-linked mental retardation (MRX), the corresponding gene has been localized to the paracentromeric region in which a low recombination rate impairs the precision of mapping. 58 refs., 3 figs., 5 tabs.

  16. Phenotype-genotype correlations in 17 new patients with an Xp11.23p11.22 microduplication and review of the literature.

    PubMed

    Nizon, Mathilde; Andrieux, Joris; Rooryck, Caroline; de Blois, Marie-Christine; Bourel-Ponchel, Emilie; Bourgois, Béatrice; Boute, Odile; David, Albert; Delobel, Bruno; Duban-Bedu, Bénédicte; Giuliano, Fabienne; Goldenberg, Alice; Grotto, Sarah; Héron, Delphine; Karmous-Benailly, Houda; Keren, Boris; Lacombe, Didier; Lapierre, Jean-Michel; Le Caignec, Cédric; Le Galloudec, Eric; Le Merrer, Martine; Le Moing, Anne-Gaëlle; Mathieu-Dramard, Michèle; Nusbaum, Sylvie; Pichon, Olivier; Pinson, Lucile; Raoul, Odile; Rio, Marlène; Romana, Serge; Roubertie, Agnès; Colleaux, Laurence; Turleau, Catherine; Vekemans, Michel; Nabbout, Rima; Malan, Valérie

    2015-01-01

    Array comparative genomic hybridization (array CGH) has proven its utility in uncovering cryptic rearrangements in patients with X-linked intellectual disability. In 2009, Giorda et al. identified inherited and de novo recurrent Xp11.23p11.22 microduplications in two males and six females from a wide cohort of patients presenting with syndromic intellectual disability. To date, 14 females and 5 males with an overlapping microduplication have been reported in the literature. To further characterize this emerging syndrome, we collected clinical and microarray data from 17 new patients, 10 females, and 7 males. The Xp11.23p11.2 microduplications detected by array CGH ranged in size from 331 Kb to 8.9 Mb. Five patients harbored 4.5 Mb recurrent duplications mediated by non-allelic homologous recombination between segmental duplications and 12 harbored atypical duplications. The chromosomal rearrangement occurred de novo in eight patients and was inherited in six affected males from three families. Patients shared several common major characteristics including moderate to severe intellectual disability, early onset of puberty, language impairment, and age related epileptic syndromes such as West syndrome and focal epilepsy with activation during sleep evolving in some patients to continuous spikes-and-waves during slow sleep. Atypical microduplications allowed us to identify minimal critical regions that might be responsible for specific clinical findings of the syndrome and to suggest possible candidate genes: FTSJ1 and SHROOM4 for intellectual disability along with PQBP1 and SLC35A2 for epilepsy. Xp11.23p11.22 microduplication is a recently-recognized syndrome associated with intellectual disability, epilepsy, and early onset of puberty in females. In this study, we propose several genes that could contribute to the phenotype.

  17. Gallium Nitride (GaN) High Power Electronics (FY11)

    DTIC Science & Technology

    2012-01-01

    Gallium Nitride (GaN) High Power Electronics (FY11) by Kenneth A. Jones, Randy P. Tompkins, Michael A. Derenge, Kevin W. Kirchner, Iskander...Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-5903 January 2012 Gallium Nitride (GaN) High Power Electronics (FY11) Kenneth A...DSI 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Gallium Nitride (GaN) High Power Electronics (FY11) 5a. CONTRACT NUMBER 5b. GRANT

  18. Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth

    NASA Astrophysics Data System (ADS)

    Soh, C. B.; Hartono, H.; Chow, S. Y.; Chua, S. J.; Fitzgerald, E. A.

    2007-01-01

    Nanoporous GaN template has been fabricated by electrochemical etching to give hexagonal pits with nanoscale pores of size 20-50nm in the underlying grains. The effect of GaN buffer layer grown at various temperatures from 650to1015°C on these as-fabricated nanopores templates is investigated by transmission electron microscopy. The buffer layer grown at the optimized temperature of 850°C partially fill up the pores and voids with annihilation of threading dislocations, serving as an excellent template for high-quality GaN growth. This phenomenon is, however, not observed for the samples grown with other temperature buffer layers. Micro-Raman measurements show significant strain relaxation and improvement in the crystal quality of the overgrown GaN layer on nanoporous GaN template as compared to overgrown on conventional GaN template.

  19. Amphoteric arsenic in GaN

    SciTech Connect

    Wahl, U.; Correia, J. G.; Araujo, J. P.; Rita, E.; Soares, J. C.

    2007-04-30

    The authors have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive {sup 73}As. They give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As{sub Ga} 'antisites' are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called miscibility gap in ternary GaAs{sub 1-x}N{sub x} compounds, which cannot be grown with a single phase for values of x in the range of 0.1

  20. TEM characterization of GaN nanowires

    SciTech Connect

    Liliental-Weber, Zuzanna; Gao, Y.H.; Bando, Y.

    2002-02-21

    Transmission electron microscopy was applied to study GaN nanowires grown on carbon nanotube surfaces by chemical reaction between Ga{sub 2}O and NH{sub 3} gas in a conventional furnace. These wires grew in two crystallographic directions, <2{und 11}0> and <01{und 1}0> (fast growth directions of GaN), in the form of whiskers covered by small elongated GaN platelets. The morphology of these platelets is similar to that observed during the growth of single crystals from a Ga melt at high temperatures under high nitrogen pressure. It is thought that growth of nanowires in two different crystallographic directions and the arrangement of the platelets to the central whisker may be influenced by the presence of Ga{sub 2}O{sub 3} (based on the observation of the energy dispersive x-ray spectra), the interplanar spacings in the wire, and the presence of defects on the interface between the central part of the nanowire and the platelets surrounding it.

  1. Carrier redistribution between different potential sites in semipolar (202{sup ¯}1) InGaN quantum wells studied by near-field photoluminescence

    SciTech Connect

    Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2014-09-15

    Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202{sup ¯}1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202{sup ¯}1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

  2. P-type doping of GaN

    SciTech Connect

    Wong, Raechelle Kimberly

    2000-04-01

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  3. GaN Electronics For High Power, High Temperature Applications

    SciTech Connect

    PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHU,S.N.G.

    2000-06-12

    A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

  4. Molecular localization of the t(11; 22)(q24; q12) translocation of Ewing sarcoma by chromosomal in situ suppression hybridization

    SciTech Connect

    Selleri, L.; Hermanson, G.G.; Eubanks, J.H.; Lewis, K.A.; Evans, G.A. )

    1991-02-01

    Chromosome translocations are associated with a variety of human leukemias, lymphomas, and solid tumors. To localize molecular markers flanking the t(11;22)(q24;q12) breakpoint that occurs in virtually all cases of Ewing sarcoma and peripheral neuroepithelioma, high-resolution chromosomal in situ suppression hybridization was carried out using a panel of cosmid clones localized and ordered on chromosome 11q. The location of the Ewing sarcoma translocation breakpoint was determined relative to the nearest two cosmid markers on 11q, clones 23.2 and 5.8, through the analysis of metaphase chromosome hybridization. By in situ hybridization to interphase nuclei, the approximate physical separation of these two markers was determined. In both Ewing sarcoma and peripheral neuroepithelioma, cosmid clone 5.8 is translocated from chromosome 11q24 to the derivative chromosome 22 and a portion of chromosome 22q12 carrying the leukemia inhibitory factor gene is translocated to the derivative chromosome 11. The physical distance between the flanking cosmid markers on chromosome 11 was determined to be in the range of 1,000 kilobases, and genomic analysis using pulsed-field gel electrophoresis showed no abnormalities over a region of 650 kilobases in the vicinity of the leukemia inhibitory factor gene on chromosome 22. This approach localizes the Ewing sarcoma breakpoint to a small region on chromosome 11q24 and provides a rapid and precise technique for the molecular characterization of chromosomal aberrations.

  5. Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

    NASA Astrophysics Data System (ADS)

    Qian, H.; Lee, K. B.; Vajargah, S. Hosseini; Novikov, S. V.; Guiney, I.; Zaidi, Z. H.; Jiang, S.; Wallis, D. J.; Foxon, C. T.; Humphreys, C. J.; Houston, P. A.

    2017-02-01

    A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.

  6. GaN: Defect and Device Issues

    SciTech Connect

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  7. Yellow Luminescence Centers of GaN

    NASA Astrophysics Data System (ADS)

    Zhao, Guangyuan; Hubbard, Seth; Pavlidis, Dimitris

    2004-05-01

    The method for measuring Shockley-Read-Hall (SRH) lifetime of yellow centers of GaN was developed. The capture-section ratio (150) of hole to electron is extracted by comparing the experimental and theoretical results. A marked increase in the SRH lifetime (from 0.75 to 7.0 ns) with the increasing in Si doping density (from 1.5× 1017 to 8.8× 1018 cm-3) was observed, and it is attributed to some Si dopant substituting for the Ga vacancy. In addition, it is also found that the YL centers are an important factor limiting the performance of GaN-based devices.

  8. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-05-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.

  9. Nucleation and growth of (10¯11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

    PubMed Central

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-01-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN. PMID:27185345

  10. Cathodoluminescence characterization of suspended GaN nanomembranes

    NASA Astrophysics Data System (ADS)

    Stevens-Kalceff, M. A.; Tiginyanu, I. M.; Popa, V.; Braniste, T.; Brenner, P.

    2013-07-01

    Continuous suspended ˜15 nm thick gallium nitride (GaN) nano-membranes have been investigated using cathodoluminescence microanalysis. The GaN nanomembranes are fabricated by focused ion beam (FIB) pre-treatment of GaN epilayer surfaces followed by photoelectrochemical (PEC) etching. CL microanalysis enables high sensitivity, nanoscale spatial resolution detection of impurities, and defects, and is associated with key features of the suspended GaN nano-membranes. CL spectra and images of the suspended nano-membranes reveal the broad emission band at ˜2.2 eV which is associated with deep acceptor states and the near edge emission at ˜3.4 eV which is associated with free exciton transitions at 295 K. The near edge emission can be resolved into two components, one associated with emission from the nanomembrane and the other associated with CL from underlying GaN transmitted through the nanomembrane. CL spectroscopy gives insight into the physical properties and optical quality of the suspended GaN nano-membranes. Blue shift of the CL near band edge emission indicates that the suspended GaN nanomembranes exhibit the combined effects of quantum confinement and strain.

  11. GaN power devices for automotive applications

    NASA Astrophysics Data System (ADS)

    Uesugi, T.; Kachi, Tetsu

    2013-03-01

    GaN is an attractive material for high performance power devices. Vertical GaN power devices are suitable for high current operation, on the other hand, lateral GaN power devices, namely GaN lateral HEMTs have both low on-resistance and low parasitic capacitance. In addition, the GaN lateral HEMTs can be fabricated on Si substrate. We can get low conduction loss and low switching loss devices with low cost. So the GaN lateral HEMTs are suitable for subsystems like an air conditioner and an electric power steering. Serious technical issues about GaN power devices are a normally-off operation, a current collapse, and a high quality gate insulator. Several normally-off operation techniques have been proposed but there is no decisive method. An NH3 surface treatment and a SiO2 passivation are useful to suppress the current collapse. An Al2O3 deposited by ALD is excellent for gate insulator in breakdown and it has enough TDDB reliability under room temperature and 150°C.

  12. GaN for LED applications

    NASA Technical Reports Server (NTRS)

    Pankove, J. I.

    1973-01-01

    In order to improve the synthesis of GaN the effect of various growth and doping parameters has been studied. Although Be, Li, Mg, and Dy can be used to overcompensate native donors, the most interesting acceptor element is Zn. The emission spectrum and the luminescence efficiency depend on the growth temperature (below 800 C), on the partial pressure of the doping impurity, and on the duration of growth. Blue-green electroluminescence with a power efficiency of 0.1 percent and a brightness of 850 fL (at 0.6 mA and 22.5 V) was obtained. Some diodes allow the color of the emitted light to change by reversing the polarity of the bias. Continuous operation of a diode over a period of 5 months showed no evidence of degradation. The luminescence properties of ion-implanted GaN were studied. Delay effects were found in the electroluminescence of diodes, although, with a dc bias, a 70-MHz modulation was possible.

  13. Development of GaN photocathodes for UV detectors

    NASA Astrophysics Data System (ADS)

    Siegmund, O.; Vallerga, J.; McPhate, J.; Malloy, J.; Tremsin, A.; Martin, A.; Ulmer, M.; Wessels, B.

    2006-11-01

    We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70% and cutoffs at ˜380 nm with low out of band response, and high stability and longevity. Samples have been processed and tested at ultra high vacuum to establish cathode process parameters, and some have been integrated into sealed tubes for long-term evaluation.

  14. Optical spectroscopy of cubic GaN in nanowires

    NASA Astrophysics Data System (ADS)

    Renard, J.; Tourbot, G.; Sam-Giao, D.; Bougerol, C.; Daudin, B.; Gayral, B.

    2010-08-01

    We show that highly homogeneous cubic GaN can be grown by plasma-assisted molecular beam epitaxy on wurtzite GaN nanowires. The line width of the donor bound exciton is below 3 meV and can reach 1.6 meV in the best parts of the studied sample. This allows to perform a detailed spectroscopy of cubic GaN, and, in particular, to determine the precise spectral positions of the donor bound exciton, the fundamental free exciton and the split-off exciton in a photoluminescence experiment.

  15. Comparative study of polar and semipolar (112⁻2) InGaN layers grown by metalorganic vapour phase epitaxy

    SciTech Connect

    Dinh, Duc V. E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J. E-mail: peter.parbrook@tyndall.ie; Caliebe, M.; Scholtz, F.

    2014-10-21

    InGaN layers were grown simultaneously on (112⁻2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750°C), the indium content (<15%) of the (112⁻2) and (0001) InGaN layers was similar. However, for temperatures less than 750°C, the indium content of the (112⁻2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112⁻2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112⁻2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112⁻2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  16. Crystallography and elasticity of individual GaN nanotubes

    NASA Astrophysics Data System (ADS)

    Liu, Baodan; Bando, Yoshio; Wang, Mingsheng; Tang, Chengchun; Mitome, Masanori; Golberg, Dmitri

    2009-05-01

    High-purity, crystalline [001]-oriented GaN nanotubes with outer diameters of 200 nm or more, rough surfaces and irregular internal channels were synthesized under epitaxial growth on [001]-oriented sapphire substrates. Elastic property measurements on free-standing individual GaN nanotubes, using the in situ transmission electron microscopy (TEM) electromechanical resonance technique, pointed at an average Young's modulus E of 37 GPa and minimum quality factor of 320. These numbers are notably lower than those for previously reported GaN nanowires. The crystallography and chemistry of the GaN nanotubes were analyzed using TEM and energy dispersion x-ray spectroscopy (EDS). It is suggested that the lowered Young's modulus and quality factor of the nanotubes are mainly due to the surface roughness and defectiveness.

  17. Novel high frequency devices with graphene and GaN

    NASA Astrophysics Data System (ADS)

    Zhao, Pei

    This work focuses on exploring new materials and new device structures to develop novel devices that can operate at very high speed. In chapter 2, the high frequency performance limitations of graphene transistor with channel length less than 100 nm are explored. The simulated results predict that intrinsic cutoff frequency fT of graphene transistor can be close to 2 THz at 15 nm channel length. In chapter 3, we explored the possibility of developing a 2D materials based vertical tunneling device. An analytical model to calculate the channel potentials and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The symmetric resonant peak in SymFET is a good candidate for high-speed analog applications. Rest of the work focuses on Gallium Nitride (GaN), several novel device concepts based on GaN heterostructure have been proposed for high frequency and high power applications. In chapter 4, we compared the performance of GaN Schottky diodes on bulk GaN substrates and GaN-on-sapphire substrates. In addition, we also discussed the lateral GaN Schottky diode between metal/2DEGs. The advantage of lateral GaN Schottky diodes is the intrinsic cutoff frequency is in the THz range. In chapter 5, a GaN Heterostructure barrier diode (HBD) is designed using the polarization charge and band offset at the AlGaN/GaN heterojunction. The polarization charge at AlGaN/GaN interface behaves as a delta-doping which induces a barrier without any chemical doping. The IV characteristics can be explained by the barrier controlled thermionic emission current. GaN HBDs can be directly integrated with GaN HEMTs, and serve as frequency multipliers or mixers for RF applications. In chapter 6, a GaN based negative effective mass oscillator (NEMO) is proposed. The current in NEMO is estimated under the ballistic limits. Negative differential resistances (NDRs) can be observed with more than 50% of the injected electrons occupied the negative

  18. GaN nanorods coated with pure BN

    NASA Astrophysics Data System (ADS)

    Han, Wei-Qiang; Zettl, A.

    2002-12-01

    We report a method to efficiently synthesize gallium nitride (GaN) nanorods coated with insulating boron nitride (BN) layers. The GaN core is crystalline (with either a cubic zincblende or hexagonal wurtzite structure) and has diameters ranging from 10 to 85 nm and lengths up to 60 μm. The outer encapsulating BN shells with typical thicknesses less than 5 nm extend fully over, and adhere well to, the entire nanorod surface.

  19. Terahertz response of GaN thin films.

    PubMed

    Tsai, Tsong-Ru; Chen, Shi-Jie; Chang, Chih-Fu; Hsu, Sheng-Hsien; Lin, Tai-Yuan; Chi, Cheng-Chung

    2006-05-29

    The indices of refraction, extinction constants and complex conductivities of the GaN film for frequencies ranging from 0.2 to 2.5 THz are obtained using THz time-domain spectroscopy. The results correspond well with the Kohlrausch stretched exponential model. Using the Kohlrausch model fit not only provides the mobility of the free carriers in the GaN film, but also estimates the relaxation time distribution function and average relaxation time.

  20. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    SciTech Connect

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

  1. Fabrication and properties of nanoporous GaN films

    NASA Astrophysics Data System (ADS)

    Wang, Y. D.; Chua, S. J.; Sander, M. S.; Chen, P.; Tripathy, S.; Fonstad, C. G.

    2004-08-01

    Nanopore arrays with pore diameters of approximately 75nm were fabricated in GaN films by inductively coupled plasma etching using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF4-based plasma conditions. Scanning electron microscopy analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy, photoluminescence, and micro-Raman techniques were employed to assess the etched GaN nanopore surface. This cost-effective, nonlithographic method to produce nano-patterned GaN templates is expected to be useful for growth and fabrication of nitride-based nanostructures and photonic band gap materials.

  2. High nitrogen pressure solution growth of GaN

    NASA Astrophysics Data System (ADS)

    Bockowski, Michal

    2014-10-01

    Results of GaN growth from gallium solution under high nitrogen pressure are presented. Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. The use of two kinds of seeds: free-standing hydride vapor phase epitaxy GaN (HVPE-GaN) obtained from metal organic chemical vapor deposition (MOCVD)-GaN/sapphire templates and free-standing HVPE-GaN obtained from the ammonothermally grown GaN crystals, is shown. Depending on the seeds’ structural quality, the differences in the structural properties of pressure grown material are demonstrated and analyzed. The role and influence of impurities, like oxygen and magnesium, on GaN crystals grown from gallium solution in the MFS configuration is presented. The properties of differently doped GaN crystals are discussed. An application of the pressure grown GaN crystals as substrates for electronic and optoelectronic devices is reported.

  3. Role of the ganSPQAB Operon in Degradation of Galactan by Bacillus subtilis.

    PubMed

    Watzlawick, Hildegard; Morabbi Heravi, Kambiz; Altenbuchner, Josef

    2016-10-15

    Bacillus subtilis possesses different enzymes for the utilization of plant cell wall polysaccharides. This includes a gene cluster containing galactan degradation genes (ganA and ganB), two transporter component genes (ganQ and ganP), and the sugar-binding lipoprotein-encoding gene ganS (previously known as cycB). These genes form an operon that is regulated by GanR. The degradation of galactan by B. subtilis begins with the activity of extracellular GanB. GanB is an endo-β-1,4-galactanase and is a member of glycoside hydrolase (GH) family 53. This enzyme was active on high-molecular-weight arabinose-free galactan and mainly produced galactotetraose as well as galactotriose and galactobiose. These galacto-oligosaccharides may enter the cell via the GanQP transmembrane proteins of the galactan ABC transporter. The specificity of the galactan ABC transporter depends on the sugar-binding lipoprotein, GanS. Purified GanS was shown to bind galactotetraose and galactotriose using thermal shift assay. The energy for this transport is provided by MsmX, an ATP-binding protein. The transported galacto-oligosaccharides are further degraded by GanA. GanA is a β-galactosidase that belongs to GH family 42. The GanA enzyme was able to hydrolyze short-chain β-1,4-galacto-oligosaccharides as well as synthetic β-galactopyranosides into galactose. Thermal shift assay as well as electrophoretic mobility shift assay demonstrated that galactobiose is the inducer of the galactan operon regulated by GanR. DNase I footprinting revealed that the GanR protein binds to an operator overlapping the -35 box of the σ(A)-type promoter of Pgan, which is located upstream of ganS IMPORTANCE: Bacillus subtilis is a Gram-positive soil bacterium that utilizes different types of carbohydrates, such as pectin, as carbon sources. So far, most of the pectin degradation systems and enzymes have been thoroughly studied in B. subtilis Nevertheless, the B. subtilis utilization system of galactan, which is

  4. Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

    NASA Astrophysics Data System (ADS)

    Bougrioua, Z.; Gibart, P.; Calleja, E.; Jahn, U.; Trampert, A.; Ristic, J.; Utrera, M.; Nataf, G.

    2007-12-01

    Dislocation-free and strain-free GaN nanopillars, grown on Si by molecular beam epitaxy, were used as nanoseeds for a new form of epitaxial lateral overgrowth (ELO) by metalorganic vapour phase epitaxy (MOVPE) until full coalescence. Such overgrown GaN films are almost relaxed and were used as templates for producing thick GaN layers by halide vapour phase epitaxy (HVPE). The final GaN film is easily separated from the starting Si substrate. This is henceforth a new technology to produce freestanding GaN. The GaN crystal quality was assessed by transmission electron microscopy (TEM), photo- and cathodoluminescence (PL, CL). It was seen that the pillar-ELO is produced from a limited number of nanopillars. Some dislocations and basal stacking faults are formed during the coalescence. However, those that propagate parallel to the substrate do not replicate in the top layer and it is expected that the thickened material present a reduced defect density.

  5. DLTS study of n-type GaN grown by MOCVD on GaN substrates

    NASA Astrophysics Data System (ADS)

    Tokuda, Y.; Matsuoka, Y.; Ueda, H.; Ishiguro, O.; Soejima, N.; Kachi, T.

    2006-10-01

    Electron traps in n-type GaN layers grown homoepitaxially by MOCVD on free-standing GaN substrates have been characterized using DLTS for vertical Schottky diodes. Two free-standing HVPE GaN substrates (A and B), obtained from two different sources, are used. The Si-doped GaN layers with the thickness of 5 μm are grown on an area of 0.9×0.9 cm 2 of substrate A and on an area of 1×1 cm 2 of substrate B. Two traps labeled B1 (Ec-0.23 eV) and B2 (Ec-0.58 eV) are observed with trap B2 dominant in GaN on both substrates. There exist no dislocation-related traps which have been previously observed in MOCVD GaN on sapphire. This might be correlated to the reduction in dislocation density due to the homoepitaxial growth. However, it is found that there is a large variation, more than an order of magnitude, in trap B2 concentration and that the B2 spatial distributions are different between the two substrates used.

  6. Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

    NASA Astrophysics Data System (ADS)

    Craft, H. S.; Rice, A. L.; Collazo, R.; Sitar, Z.; Maria, J.-P.

    2011-02-01

    We report on the surface stoichiometry of Ga-polar GaN films grown by metalorganic chemical vapor deposition as studied by x-ray photoelectron spectroscopy. GaN film surfaces are found to be Ga-rich, with Ga:N ratios ranging from 1.3:1 to 3.2:1. In vacuo ion-beam sputter/annealing studies show that these treatments drive the apparent Ga:N surface composition farther from unity, either through a decrease in surface contamination, oxidation of the surface, or both. Simple annealing experiments decrease the Ga:N ratio. The measured GaN ratio is correlated with the GaN growth time, suggesting that residual Ga precursor after growth interacts with the GaN surface as it cools.

  7. Tailoring GaN semiconductor surfaces with biomolecules.

    PubMed

    Estephan, Elias; Larroque, Christian; Cuisinier, Frédéric J G; Bálint, Zoltán; Gergely, Csilla

    2008-07-24

    Functionalization of semiconductors constitutes a crucial step in using these materials for various electronic, photonic, biomedical, and sensing applications. Within the various possible approaches, selection of material-binding biomolecules from a random biological library, based on the natural recognition of proteins or peptides toward specific material, offers many advantages, most notably biocompatibility. Here we report on the selective functionalization of GaN, an important semiconductor that has found broad uses in the past decade due to its efficient electroluminescence and pronounced chemical stability. A 12-mer peptide ("GaN_probe") with specific recognition for GaN has evolved. The subtle interplay of mostly nonpolar hydrophobic and some polar amino acidic residues defines the high affinity adhesion properties of the peptide. The interaction forces between the peptide and GaN are quantified, and the hydrophobic domain of the GaN_probe is identified as primordial for the binding specificity. These nanosized binding blocks are further used for controlled placement of biotin-streptavidin complexes on the GaN surface. Thus, the controlled grow of a new, patterned inorganic-organic hybrid material is achieved. Tailoring of GaN by biological molecules can lead to a new class of nanostructured semiconductor-based devices.

  8. Native defects in GaN: a hybrid functional study

    NASA Astrophysics Data System (ADS)

    Diallo, Ibrahima Castillo; Demchenko, Denis

    Intrinsic defects play an important role in the performance of GaN-based devices. We present hybrid density functional calculations of the electronic and possible optical properties of interstitial N (Ni-Ni) , N antisite (NGa) , interstitial Ga (Gai) , Ga antisite (GaN) , Ga vacancy (VGa) , N vacancy (VN) and Ga-N divacancies (VGaVN) in GaN. Our results show that the vacancies display relatively low formation energies in certain samples, whereas antisites and interstitials are energetically less favorable. However, interstitials can be created by electron irradiation. For instance, in 2.5 MeV electron-irradiated GaN samples, a strong correlation between the frequently observed photoluminescence (PL) band centered around 0.85 eV accompanied with a rich phonon sideband of ~0.88 eV and the theoretical optical behavior of interstitial Ga is discussed. N vacancies are found to likely contribute to the experimentally obtained green luminescence band (GL2) peaking at 2.24 eV in high-resistivity undoped and Mg-doped GaN. National Science Foundation (DMR-1410125) and the Thomas F. and Kate Miller Jeffress Memorial Trust.

  9. Pulsed laser annealing of Be-implanted GaN

    NASA Astrophysics Data System (ADS)

    Wang, H. T.; Tan, L. S.; Chor, E. F.

    2005-11-01

    Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

  10. Structural defects in bulk GaN

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

    2014-10-01

    Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

  11. Characterization of electrospun GaN nanofibers

    NASA Astrophysics Data System (ADS)

    Ramos, Idalia; Melendez, Anamaris; Morales, Kristle; Campo, Eva M.; Santiago-Aviles, Jorge J.

    2010-03-01

    Gallium Nitride shows characteristics pertinent to optoelectronics and gas sensing applications. Nanofibers have been produced using electrospinning and a precursor composed of Gallium (III) Nitrate Hydrate dissolved in Dimethyl-Acetamide and Cellulose Acetate in Acetone and DMA. The resulting nanofibers were sintered at 400C in nitrogen for one hour to decompose the polymer, the furnace atmosphere switched to ammonia and the fibers sintered for periods of 3, 5 and 7 hrs at 900C. They showed morphologies with unclear dependence on processing parameters. X-ray Diffraction revealed the evolution towards wurtzite phase through annealing. From line broadening we estimate a crystalline domain size of about 12 nm. Transmission Electron Microscopy suggests nucleation and growth of X-tallites while Fourier-Transform Infrared Spectroscopy and Ultraviolet-Visible Spectroscopy confirm the material evolution towards crystallinity and the production of wurtzite GaN nanofibers. I-V characteristics of single nanofibers show linearity with increments in conductivity for those fibers ammoniated during longer periods of time. Ongoing efforts aim at improving fabrication, sensing and photoluminescence characterization.

  12. Desorption Induced Formation of Negative Nanowires in GaN

    SciTech Connect

    Stach, E.A.; Kim, B.-J.

    2011-06-01

    We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.

  13. Application of GaN for photoelectrolysis of water

    NASA Astrophysics Data System (ADS)

    Puzyk, M. V.; Usikov, A. S.; Kurin, S. Yu; Puzyk, A. M.; Fomichev, A. D.; Ermakov, I. A.; Kovalev, D. S.; Papchenko, B. P.; Helava, H.; Makarov, Yu N.

    2015-11-01

    GaN layers of n-type and p-type conductivity grown by HVPE on sapphire substrates were used as working electrodes for water electrolysis, photoelectrolysis and hydrogen gas generation. Specifically the water splitting process is discussed. Corrosion of the GaN materials is also considered. The hydrogen production rate under 365-nm UV LED irradiation of the GaN and external bias was 0.3 ml/(cm2*h) for an n-GaN photoanode (n∼8×1016 cm-3) in 1M Na2SO4 electrolyte and 1.2 ml/(cm2*h) for an n-GaN photoanode (n∼1×1017 cm-3) in 1M KOH electrolyte.

  14. Gate stack engineering for GaN lateral power transistors

    NASA Astrophysics Data System (ADS)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Kevin J.

    2016-02-01

    Developing optimal gate-stack technology is a key to enhancing the reliability and performance of GaN insulated-gate devices for high-voltage power switching applications. In this paper, we discuss current challenges and review our recent progresses in gate-stack technology development toward high-performance and high-reliability GaN power devices, including (1) interface engineering that creates a high-quality dielectric/III-nitride interface with low trap density; (2) barrier-layer engineering that enables optimal trade-off between performance and stability; (3) bulk quality and reliability enhancement of the gate dielectric. These gate-stack techniques in terms of new process development and device structure design are valuable to realize highly reliable and competitive GaN power devices.

  15. Biosensors based on GaN nanoring optical cavities

    NASA Astrophysics Data System (ADS)

    Kouno, Tetsuya; Takeshima, Hoshi; Kishino, Katsumi; Sakai, Masaru; Hara, Kazuhiko

    2016-05-01

    Biosensors based on GaN nanoring optical cavities were demonstrated using room-temperature photoluminescence measurements. The outer diameter, height, and thickness of the GaN nanorings were approximately 750-800, 900, and 130-180 nm, respectively. The nanorings functioned as whispering-gallery-mode (WGM)-type optical cavities and exhibited sharp resonant peaks like lasing actions. The evanescent component of the WGM was strongly affected by the refractive index of the ambient environment, the type of liquid, and the sucrose concentration of the analyzed solution, resulting in shifts of the resonant wavelengths. The results indicate that the GaN nanorings can potentially be used in sugar sensors of the biosensors.

  16. Desorption induced formation of negative nanowires in GaN

    NASA Astrophysics Data System (ADS)

    Kim, Bong-Joong; Stach, Eric A.

    2011-06-01

    We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the {1 0 1¯ 0} prism planes, while lateral negative nanowires grow in close-packed <1 0 1¯ 0> by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.

  17. GaN nanowire tips for nanoscale atomic force microscopy.

    PubMed

    Behzadirad, Mahmoud; Nami, Mohsen; Rishinaramagalam, Ashwin; Feezell, Daniel; Busani, Tito

    2017-04-07

    Imaging of high-aspect-ratio nanostructures with sharp edges and straight walls in nanoscale metrology by Atomic Force Microscopy (AFM) has been challenging due to the mechanical properties and conical geometry of the majority of available commercial tips. Here we report on the fabrication of GaN probes for nanoscale metrology of high-aspect-ratio structures to enhance the resolution of AFM imaging and improve the durability of AFM tips. GaN nanowires (NWs) were fabricated using bottom-up and top-down techniques and bonded to Si cantilevers to scan vertical trenches on Si substrates. Over several scans, the GaN probes demonstrated excellent durability while scanning uneven structures and showed resolution enhancements in topography images, independent of scan direction, compared to commercial Si tips.

  18. Conductivity based on selective etch for GaN devices and applications thereof

    DOEpatents

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  19. A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

    NASA Astrophysics Data System (ADS)

    Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

    2016-10-01

    Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

  20. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

    NASA Astrophysics Data System (ADS)

    Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David J.

    2016-12-01

    While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (000_1) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

  1. Development of Partial-Charge Potential for GaN

    SciTech Connect

    Gao, Fei; Devanathan, Ram; Oda, Takuji; Weber, William J.

    2006-09-01

    Partial-charged potentials for GaN are systematically developed that describes a wide range of structural properties, where the reference data for fitting the potential parameters are taken from ab initial calculations or experiments. The present potential model provides a good fit to different structural geometries and high pressure phases of GaN. The high-pressure transition from wurtzite to rock-salt structure is correctly described yielding the phase transition pressure of about 55 GPa, and the calculated volume change at the transition is in good agreement with experimental data. The results are compared with those obtained by ab initio simulations.

  2. Transmission electron microscopy of electrospun GaN nanofibers

    NASA Astrophysics Data System (ADS)

    Robles-García, Joshua L.; Meléndez, Anamaris; Yates, Douglas; Santiago-Avilés, Jorge J.; Ramos, Idalia; Campo, Eva M.

    2011-06-01

    We have reported earlier progress in producing polycrystalline wurtzite-polymorph and photo-conductive GaN nanofibers by electrospinning. This paper shows grain stacking during heat treatment and suggests the need to understand nucleation and grain growth following electrospinning. Transmission Electron Microscopy (TEM) analysis of GaN shows brittle fibers, grain stacking, and unfinished grain nucleation. X-Ray Diffraction analysis confirmed dominant hexagonal 101-wurtzite preferential overall orientation and the incipient grains are of high crystalline quality as seen by high resolution TEM.

  3. Dislocation luminescence in GaN single crystals under nanoindentation

    PubMed Central

    2014-01-01

    This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism. PMID:25593548

  4. Redistribution of Implanted Dopants in GaN

    SciTech Connect

    Fu, M.; Gao, X.A.; Han, J.; Pearton, S.J.; Rieger, D.J.; Scarvepalli, V. Sekhar, J.A.; Shul, R.J.; Singh, R.K.; Wilson, R.G.; Zavada, J.M.; Zolper, J.C.

    1998-11-20

    Donor (S, Se and Te) and acceptor (Mg, Be and C) dopants have been implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C. No redistribution of any of the elements is detectable by Secondary Ion Mass Spectrometry, except for Be, which displays an apparent damage-assisted diffusion at 900 "C. At higher temperatures there is no further movement of the Be, suggesting that the point defect flux that assists motion at lower temperatures has been annealed. Effective diffusivities are <2X 1013 cm2.sec-1 at 1450 `C for each of the dopants in GaN.

  5. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup −8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  6. GaN surface states investigated by electrochemical studies

    NASA Astrophysics Data System (ADS)

    Winnerl, Andrea; Garrido, Jose A.; Stutzmann, Martin

    2017-03-01

    We present a systematic study of electrochemically active surface states on MOCVD-grown n-type GaN in aqueous electrolytes using cyclic voltammetry and impedance spectroscopy over a wide range of potentials and frequencies. In order to alter the surface states, the GaN samples are either etched or oxidized, and the influence of the surface treatment on the defect-mediated charge transfer to the electrolyte is investigated. Etching in HCl removes substoichiometric GaO x , and leads to a pronounced density of electrochemically active surface states. Oxidation effectively removes these surface states.

  7. Chemical mechanical polishing of freestanding GaN substrates

    NASA Astrophysics Data System (ADS)

    Huaiyue, Yan; Xiangqian, Xiu; Zhanhui, Liu; Rong, Zhang; Xuemei, Hua; Zili, Xie; Ping, Han; Yi, Shi; Youdou, Zheng

    2009-02-01

    Chemical mechanical polishing (CMP) has been used to produce smooth and scratch-free surfaces for GaN. In the aqueous solution of KOH, GaN is subjected to etching. At the same time, all surface irregularities, including etch pyramids, roughness after mechanical polishing and so on will be removed by a polishing pad. The experiments had been performed under the condition of different abrasive particle sizes of the polishing pad. Also the polishing results for different polishing times are analyzed, and chemical mechanical polishing resulted in an average root mean square (RMS) surface roughness of 0.565 nm, as measured by atomic force microscopy.

  8. Self-assembled GaN hexagonal micropyramid and microdisk

    SciTech Connect

    Lo Ikai; Hsieh, C.-H.; Hsu, Y.-C.; Pang, W.-Y.; Chou, M.-C.

    2009-02-09

    The self-assembled GaN hexagonal micropyramid and microdisk were grown on LiAlO{sub 2} by plasma-assisted molecular-beam epitaxy. It was found that the (0001) disk was established with the capture of N atoms by most-outside Ga atoms as the (1x1) surface was constructing, while the pyramid was obtained due to the missing of most-outside N atoms. The intensity of cathode luminescence excited from the microdisk was one order of amplitude greater than that from M-plane GaN.

  9. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  10. GaN nanowire arrays by a patterned metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Wang, K. C.; Yuan, G. D.; Wu, R. W.; Lu, H. X.; Liu, Z. Q.; Wei, T. B.; Wang, J. X.; Li, J. M.; Zhang, W. J.

    2016-04-01

    We developed an one-step and two-step metal-assisted chemical etching method to produce self-organized GaN nanowire arrays. In one-step approach, GaN nanowire arrays are synthesized uniformly on GaN thin film surface. However, in a two-step etching processes, GaN nanowires are formed only in metal uncovered regions, and GaN regions with metal-covering show nano-porous sidewalls. We propose that nanowires and porous nanostructures are tuned by sufficient and limited etch rate, respectively. PL spectra shows a red-shift of band edge emission in GaN nanostructures. The formation mechanism of nanowires was illustrated by two separated electrochemical reactions occur simultaneously. The function of metals and UV light was illustrated by the scheme of potential relationship between energy bands in Si, GaN and standard hydrogen electrode potential of solution and metals.

  11. Improved Semipolar (112¯2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN x Interlayer

    NASA Astrophysics Data System (ADS)

    Sheng-Rui, Xu; Ying, Zhao; Teng, Jiang; Jin-Cheng, Zhang; Pei-Xian, Li; Yue, Hao

    2016-06-01

    Not Available Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108, the Fundamental Research Funds for the Central Universities under Grant No JB141101, and the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01.

  12. Basic ammonothermal GaN growth in molybdenum capsules

    NASA Astrophysics Data System (ADS)

    Pimputkar, S.; Speck, J. S.; Nakamura, S.

    2016-12-01

    Single crystal, bulk gallium nitride (GaN) crystals were grown using the basic ammonothermal method in a high purity growth environment created using a non-hermetically sealed molybdenum (Mo) capsule and compared to growths performed in a similarly designed silver (Ag) capsule and capsule-free René 41 autoclave. Secondary ion mass spectrometry (SIMS) analysis revealed transition metal free (<1×1017 cm-3) GaN crystals. Anomalously low oxygen concentrations ((2-6)×1018 cm-3) were measured in a {0001} seeded crystal boule grown using a Mo capsule, despite higher source material oxygen concentrations ((1-5)×1019 cm-3) suggesting that molybdenum (or molybdenum nitrides) may act to getter oxygen under certain conditions. Total system pressure profiles from growth runs in a Mo capsule system were comparable to those without a capsule, with pressures peaking within 2 days and slowly decaying due to hydrogen diffusional losses. Measured Mo capsule GaN growth rates were comparable to un-optimized growth rates in capsule-free systems and appreciably slower than in Ag-capsule systems. Crystal quality replicated that of the GaN seed crystals for all capsule conditions, with high quality growth occurring on the (0001) Ga-face. Optical absorption and impurity concentration characterization suggests reduced concentrations of hydrogenated gallium vacancies (VGa-Hx).

  13. Refractive index of erbium doped GaN thin films

    SciTech Connect

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  14. Photoluminescence of Zn-implanted GaN

    NASA Technical Reports Server (NTRS)

    Pankove, J. I.; Hutchby, J. A.

    1974-01-01

    The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

  15. Luminescence properties of defects in GaN

    NASA Astrophysics Data System (ADS)

    Reshchikov, Michael A.; Morkoç, Hadis

    2005-03-01

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of

  16. Construction of two YAC contigs in human xp11.23-p11.22, one encompassing the loci OATL1, GATA, TFE3, and SYP, the other linking DXS255 to DXS146

    SciTech Connect

    Fisher, S.E.; Hatchwell, E.; Chand, A.; Ockenden, N.; Craig, I.W.

    1995-09-20

    We have constructed two YAC contigs in the Xp11.23-p11.22 interval of the human X chromosome, a region that was previously poorly characterized. One contig, of at least 1.4 Mb, links the pseudogene OATL1 to the genes GATA1, TFE3, and SYP and also contains loci implicated in Wiskott-Aldrich syndrome and synovial sarcoma. A second contig, mapping proximal to the first, is estimated to be over 2.1 Mb and links the hypervariable locus DXS255 to DXS146, and also contains a chloride channel gene that is responsible for hereditary nephrolithiasis. We have used plasmid rescue, inverse PCR, and Alu-PCR to generate 20 novel markers from this region, 1 of which is polymorphic, and have positioned these relative to one another on the basis of YAC analysis. The order of previously known markers within our contigs, Xpter-OATL1-GATA-TFE3-SYP-DXS255-DXS146-Xcen, agrees with genomic pulsed-field maps of the region. In addition, we have constructed a rare-cutter restriction map for a 710-kb region of the DXS255-DXS146 contig and have identified three CpG islands. These contigs and new markers will provide a useful resource for more detailed analysis of Xp11.23-p11.22, a region implicated in several genetic diseases. 32 refs., 2 figs., 2 tabs.

  17. 47,XY,+der(X)t(X;18)(p11.4;p11.22): A Unique Aneuploidy Associated with Klinefelter Syndrome due to an Extra Derivative X Chromosome Inherited Maternally.

    PubMed

    Liang, Ji; Zhang, Yongsheng; Wang, Ruixue; Liang, Zuowen; Yue, Jiaming; Liu, Ruizhi

    2015-01-01

    A derivative X chromosome formed by translocation involving an X chromosome and a chromosome 18 in a Klinefelter syndrome (KS) patient with a 47,XXY karyotype has not been reported before. In this study, we present the clinical and molecular cytogenetic characteristics. The patient presented with small testes and azoospermia. G-banding analysis identified the karyotype as 47,XY,del(X)(p?11.4). Array CGH detected a 10.36-Mb duplication of chromosome region 18p11.22p11.32 (14,316-10,377,516) and a 111.18-Mb duplication of chromosome region Xp11.4q28 (61,931, 689-155,111,583), in addition to the normal chromosome 18 and an X chromosome. FISH results further revealed the extra 18p located at the end of the short arm of a deleted X chromosome, forming a derivative X chromosome. Finally, we identified the karyotype of the patient as 47,XY,+der(X)t(X;18)(p11.4;p11.22). The derivative X chromosome was maternally inherited. To our knowledge, this rare karyotype has not yet been reported in the literature. The present study may suggest a novel karyotype associated with KS.

  18. A rare case of t(11;22) in a mantle cell lymphoma like B-cell neoplasia resulting in a fusion of IGL and CCND1: case report

    PubMed Central

    2011-01-01

    The chromosomal translocation (11;14)(q13;q32) rearranging the locus for cyclin D1 (CCND1) to that of the immunoglobulin heavy chain (IGH) can be found in virtually all cases of mantle cell lymphoma (MCL), while other CCND1 translocations are extremely rare. As CCND1 overexpression and activation is a hallmark of MCL it is regarded as a central biological mechanism in the development and maintenance of this disease. Here we present a patient initially diagnosed with chronic lymphocytic leukemia (CLL) where chromosome banding analysis revealed, among other aberrations, a translocation (11;22)(q13;q11.2). We show by fluorescence in situ hybridization (FISH) analysis that on chromosome 22 the immunoglobulin light chain lambda (IGL) is involved in this cytogenetic aberration. Additionally, we demonstrate the resulting overexpression of CCND1 on the RNA and protein level, thereby consolidating the new diagnosis of a MCL-like B-cell neoplasia. Summing up, we described a rare case of t(11;22)(q13;q11.2) in a MCL-like neoplasia and showed that this aberration leads to an overexpression of CCND1 which is regarded as a key biological feature in MCL. This case underlines the importance of cytogenetic analyses especially in atypical cases of B cell lymphomas. PMID:21457541

  19. Complex segmental duplications mediate a recurrent dup(X)(p11.22-p11.23) associated with mental retardation, speech delay, and EEG anomalies in males and females.

    PubMed

    Giorda, Roberto; Bonaglia, M Clara; Beri, Silvana; Fichera, Marco; Novara, Francesca; Magini, Pamela; Urquhart, Jill; Sharkey, Freddie H; Zucca, Claudio; Grasso, Rita; Marelli, Susan; Castiglia, Lucia; Di Benedetto, Daniela; Musumeci, Sebastiano A; Vitello, Girolamo A; Failla, Pinella; Reitano, Santina; Avola, Emanuela; Bisulli, Francesca; Tinuper, Paolo; Mastrangelo, Massimo; Fiocchi, Isabella; Spaccini, Luigina; Torniero, Claudia; Fontana, Elena; Lynch, Sally Ann; Clayton-Smith, Jill; Black, Graeme; Jonveaux, Philippe; Leheup, Bruno; Seri, Marco; Romano, Corrado; dalla Bernardina, Bernardo; Zuffardi, Orsetta

    2009-09-01

    Submicroscopic copy-number variations make a considerable contribution to the genetic etiology of human disease. We have analyzed subjects with idiopathic mental retardation (MR) by using whole-genome oligonucleotide-based array comparative genomic hybridization (aCGH) and identified familial and de novo recurrent Xp11.22-p11.23 duplications in males and females with MR, speech delay, and a peculiar electroencephalographic (EEG) pattern in childhood. The size of the duplications ranges from 0.8-9.2 Mb. Most affected females show preferential activation of the duplicated X chromosome. Carriers of the smallest duplication show X-linked recessive inheritance. All other affected individuals present dominant expression and comparable clinical phenotypes irrespective of sex, duplication size, and X-inactivation pattern. The majority of the rearrangements are mediated by recombination between flanking complex segmental duplications. The identification of common clinical features, including the typical EEG pattern, predisposing genomic structure, and peculiar X-inactivation pattern, suggests that duplication of Xp11.22-p11.23 constitutes a previously undescribed syndrome.

  20. Complex Segmental Duplications Mediate a Recurrent dup(X)(p11.22-p11.23) Associated with Mental Retardation, Speech Delay, and EEG Anomalies in Males and Females

    PubMed Central

    Giorda, Roberto; Bonaglia, M. Clara; Beri, Silvana; Fichera, Marco; Novara, Francesca; Magini, Pamela; Urquhart, Jill; Sharkey, Freddie H.; Zucca, Claudio; Grasso, Rita; Marelli, Susan; Castiglia, Lucia; Di Benedetto, Daniela; Musumeci, Sebastiano A.; Vitello, Girolamo A.; Failla, Pinella; Reitano, Santina; Avola, Emanuela; Bisulli, Francesca; Tinuper, Paolo; Mastrangelo, Massimo; Fiocchi, Isabella; Spaccini, Luigina; Torniero, Claudia; Fontana, Elena; Lynch, Sally Ann; Clayton-Smith, Jill; Black, Graeme; Jonveaux, Philippe; Leheup, Bruno; Seri, Marco; Romano, Corrado; Bernardina, Bernardo dalla; Zuffardi, Orsetta

    2009-01-01

    Submicroscopic copy-number variations make a considerable contribution to the genetic etiology of human disease. We have analyzed subjects with idiopathic mental retardation (MR) by using whole-genome oligonucleotide-based array comparative genomic hybridization (aCGH) and identified familial and de novo recurrent Xp11.22-p11.23 duplications in males and females with MR, speech delay, and a peculiar electroencephalographic (EEG) pattern in childhood. The size of the duplications ranges from 0.8–9.2 Mb. Most affected females show preferential activation of the duplicated X chromosome. Carriers of the smallest duplication show X-linked recessive inheritance. All other affected individuals present dominant expression and comparable clinical phenotypes irrespective of sex, duplication size, and X-inactivation pattern. The majority of the rearrangements are mediated by recombination between flanking complex segmental duplications. The identification of common clinical features, including the typical EEG pattern, predisposing genomic structure, and peculiar X-inactivation pattern, suggests that duplication of Xp11.22-p11.23 constitutes a previously undescribed syndrome. PMID:19716111

  1. Mechanism of stress control for GaN growth on Si using AlN interlayers

    NASA Astrophysics Data System (ADS)

    Suzuki, Michihiro; Nakamura, Akihiro; Nakano, Yoshiaki; Sugiyama, Masakazu

    2017-04-01

    For the purpose of controlling the wafer bow of GaN-on-Si structure, in situ curvature transient during the growth of a GaN layer on an AlN interlayer was investigated systematically by estimating the compressive strain applied to the GaN layer with the progress of the layer growth. The compressive strain was dependent on the morphology of the GaN surface prior to the growth of the AlN interlayer. It was found that the transition sequence from GaN growth to AlN growth induces roughening of the GaN surface and both high NH3 partial pressure and the short transition time were effective for reducing the roughness of the GaN surface beneath the AlN interlayer. The improved transition sequence increased the compressive strain in GaN by a factor of 2.5. The AlN grown at the same temperature as that of GaN was beneficial in both better surface morphology and the reduction of the transition time between GaN growth and AlN growth. With this high-temperature AlN interlayer, its thickness is another important factor governing the compressive strain in GaN. To get AlN relaxed for applying the compressive strain to GaN, the AlN layer should be thicker but too thick layer after relaxation results in surface roughening, which in turn introduces defects to the overlying GaN layer and reduces the compressive strain by partial lattice relaxation of GaN.

  2. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

    PubMed

    Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

    2017-04-11

    Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

  3. Substitutional and interstitial oxygen in wurtzite GaN

    NASA Astrophysics Data System (ADS)

    Wright, A. F.

    2005-11-01

    Density-functional theory was used to compute energy-minimum configurations and formation energies of substitutional and interstitial oxygen (O) in wurtzite GaN. The results indicate that O substituted at a N site (ON) acts as a single donor with the ionized state (ON+1) being the most stable O state in p-type GaN. In n-type GaN, interstitial O (OI) is predicted to be a double acceptor and O substituted at a Ga site (OGa) is predicted to be a triple acceptor. The formation energies of these two species are comparable to that of ON in n-type GaN and, as such, they should form and compensate the ON donors. The extent of compensation was estimated for both Ga-rich and N-rich conditions with a total O concentration of 1017cm-3. Ga-rich conditions yielded negligible compensation and an ON concentration in excess of 9.9×1016cm-3. N-rich conditions yielded a 25% lower ON concentration, due to the increased stability of OI and OGa relative to ON, and moderate compensation. These findings are consistent with experimental results indicating that O acts as a donor in GaN(O). Complexes of ON with the Mg acceptor and OI with the Si donor were examined. Binding energies for charge-conserving reactions were ⩾0.5eV, indicating that these complexes can exist in equilibrium at room temperature. Complexes of ON with the Ga vacancy in n-type GaN were also examined and their binding energies were 1.2 and 1.4eV, indicating that appreciable concentrations can exist in equilibrium even at elevated temperatures.

  4. Specific peptide for functionalization of GaN

    NASA Astrophysics Data System (ADS)

    Estephan, E.; Larroque, C.; Cloitre, T.; Cuisinier, F. J. G.; Gergely, C.

    2008-04-01

    Nanobiotechnology aims to exploit biomolecular recognition and self-assembly capabilities for integrating advanced materials into medicine and biology. However frequent problems are encountered at the interface of substrate-biological molecule, as the direct physical adsorption of biological molecules is dependent of unpredictable non-specific interactions with the surface, often causing their denaturation. Therefore, a proper functionalization of the substrate should avoid a loss of biological activity. In this work we address the functionalization of the semiconductor GaN (0001) for biosensing applications. The basic interest of using III-V class semiconductors is their good light emitting properties and a fair chemical stability that allows various applications of these materials. The technology chosen to elaborate GaN-specific peptides is the combinatorial phage-display method, a biological screening procedure based on affinity selection. An M13 bacteriophage library has been used to screen 10 10 different peptides against the GaN (0001) surface to finally isolate one specific peptide. The preferential attachment of the biotinylated selected peptide onto the GaN (0001), in close proximity to a surface of different chemical and structural composition has been demonstrated by fluorescence microscopy. Further physicochemical studies have been initiated to evaluate the semiconductor-peptide interface and understand the details in the specific recognition of peptides for semiconductor substrates. Fourier Transform Infrared spectroscopy in Attenuated Total Reflection mode (FTIR-ATR) has been employed to prove the presence of peptides on the surface. Our Atomic Force Microscopy (AFM) studies on the morphology of the GaN surface after functionalization revealed a total surface coverage by a very thin, homogeneous peptide layer. Due to its good biocompatibility, functionalized GaN devices might evolve in a new class of implantable biosensors for medical applications.

  5. High spatial uniformity of photoluminescence spectra in semipolar (202{sup ¯}1) plane InGaN/GaN quantum wells

    SciTech Connect

    Gelžinytė, K.; Ivanov, R.; Marcinkevičius, S.; Zhao, Y.; Becerra, D. L.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2015-01-14

    Scanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar (202{sup ¯}1) In{sub x}Ga{sub 1−x}N/GaN single quantum wells (QWs) for 0.11≤x≤0.36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6–12 meV and 0.03–0.07, respectively. Near-field maps of PL parameters showed large, ∼5 to 10 μm size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The near-field PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause.

  6. Silicon doping of semipolar (11 2 bar 2)Alx Ga1-x N (0.50 ≤ x ≤ 0.55)

    NASA Astrophysics Data System (ADS)

    Dinh, Duc V.; Pampili, Pietro; Parbrook, Peter J.

    2016-10-01

    The effect of silicon doping on the growth and properties of ∼ 1.0 μm-thick Alx Ga1-x N(0.50 ≤ x ≤ 0.55) layers grown on semipolar (11 2 bar 2) AlN templates by metalorganic vapour phase epitaxy was studied. The layers were grown with different disilane/group-III precursors ratios that varied from 2.8×10-5 to 3.4×10-4. The surface morphology of the Si-doped (11 2 bar 2) AlGaN layers showed undulations along [ 1 1 bar 00 ] AlGaN , AlN with a root-mean square roughness of about 4.0 nm within a scan range of 20 × 20 μm2 . Different photoluminescence peaks have been linked to negatively charged cation vacancies (VIII3-) and their complexes with impurities such as VIII3- - 3 ON1+, (VIII complex)1-, and (VIII complex)2-. The optimised AlGaN:Si layer exhibited a carrier concentration of ∼1.2×1019 cm-3, a carrier mobility of 30.7 cm2/V s, and a resistivity of 0.018 Ω cm , as determined by Hall-effect measurements at room temperature. A correlation between the resistivity and luminescence emission intensities of AlGaN near-band-edge and impurity-related complexes was found.

  7. Partial strain relaxation effects on polarization anisotropy of semipolar (112{sup ¯}2) InGaN/GaN quantum well structures

    SciTech Connect

    Park, Seoung-Hwan; Mishra, Dhaneshwar; Eugene Pak, Y.; Young Park, Chang; Yoo, Seung-Hyun; Cho, Yong-Hee; Shim, Mun-Bo; Hwang, Sangheum; Kim, Sungjin

    2013-11-25

    Partial strain relaxation effects on polarization anisotropy of semipolar (112{sup ¯}2) InGaN/GaN quantum well (QW) structures were investigated using the multiband effective-mass theory. In the case of strain relaxation of ϵ{sub x′x′} along x′-axis, the polarization ratio gradually decreases with increasing strain relaxation. Also, with the strain relaxation by the same amount, the variation of the polarization ratio along x′-axis is shown to be much larger than that along y′-axis. However, the polarization switching is not observed even at a high In composition of 0.4 due to a small strain component (ϵ{sub x′x′}{sup 0}) with no strain relaxation. On the other hand, in the case of strain relaxation of ϵ{sub y′y′} along y′-axis, the polarization switching is observed, and the optical anisotropy is found to change from positive to negative with increasing strain relaxation. Also, the absolute value of the polarization ratio gradually decreases with increasing carrier density. However, the polarization switching due to the carrier density is not observed. Thus, the polarization switching observed at high carrier density may be attributed to inhomogeneous strain distribution in the InGaN layer.

  8. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

    NASA Astrophysics Data System (ADS)

    Rajan, Akhil; Rogers, David J.; Ton-That, Cuong; Zhu, Liangchen; Phillips, Matthew R.; Sundaram, Suresh; Gautier, Simon; Moudakir, Tarik; El-Gmili, Youssef; Ougazzaden, Abdallah; Sandana, Vinod E.; Teherani, Ferechteh H.; Bove, Philippe; Prior, Kevin A.; Djebbour, Zakaria; McClintock, Ryan; Razeghi, Manijeh

    2016-08-01

    Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling.

  9. Atomic-Level Study of Melting Behavior of GaN Nanotubes

    SciTech Connect

    Wang, Zhiguo; Zu, Xiaotao; Gao, Fei; Weber, William J.

    2006-09-20

    Molecular dynamics simulations with a Stillinger-Weber potential have been used to investigate the melting behavior of wurtzite-type single crystalline GaN nanotubes. The simulations show that the melting temperature of GaN nanotubes is much lower than that of bulk GaN, which may be associated with the large surface-to-volume ratio of the nanotubes. The melting temperature of the GaN nanotubes increases with the thickness of the nanotubes to a saturation value, which is close to the melting temperature of a GaN slab. The results reveal that the nanotubes begin to melt at the surface, and then the melting rapidly extends to the interior of the nanotubes as the temperature increases. The melting temperature of a single-crystalline GaN nanotube with [100]-oriented lateral facets is higher than that with [110]-oriented lateral facets for the same thickness.

  10. Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots

    PubMed Central

    Lin, T. N.; Inciong, M. R.; Santiago, S. R. M. S.; Yeh, T. W.; Yang, W. Y.; Yuan, C. T.; Shen, J. L.; Kuo, H. C.; Chiu, C. H.

    2016-01-01

    We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photo-induced doping are promising for applications in GaN-based optoelectronic devices. PMID:26987403

  11. Fabrication and characterization of GaN nanowire doubly clamped resonators

    SciTech Connect

    Maliakkal, Carina B. Mathew, John P.; Hatui, Nirupam; Rahman, A. Azizur; Deshmukh, Mandar M.; Bhattacharya, Arnab

    2015-09-21

    Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Young's modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ∼90 nm, we obtained values for the Young's modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Young's modulus in wurtzite crystals.

  12. Graphene oxide assisted synthesis of GaN nanostructures for reducing cell adhesion.

    PubMed

    Yang, Rong; Zhang, Ying; Li, Jingying; Han, Qiusen; Zhang, Wei; Lu, Chao; Yang, Yanlian; Dong, Hongwei; Wang, Chen

    2013-11-21

    We report a general approach for the synthesis of large-scale gallium nitride (GaN) nanostructures by the graphene oxide (GO) assisted chemical vapor deposition (CVD) method. A modulation effect of GaN nanostructures on cell adhesion has been observed. The morphology of the GaN surface can be controlled by GO concentrations. This approach, which is based on the predictable choice of the ratio of GO to catalysts, can be readily extended to the synthesis of other materials with controllable nanostructures. Cell studies show that GaN nanostructures reduced cell adhesion significantly compared to GaN flat surfaces. The cell-repelling property is related to the nanostructure and surface wettability. These observations of the modulation effect on cell behaviors suggest new opportunities for novel GaN nanomaterial-based biomedical devices. We believe that potential applications will emerge in the biomedical and biotechnological fields.

  13. Radiation effects in GaN devices and materials (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Sun, Ke-Xun; Nelson, Ron; Yeamans, Charles

    2016-10-01

    Gallium Nitride (GaN) is a wide-bandgap semiconductor having excellent radiation properties. GaN crystal is ionic-covalent with significant iconicity resulting in stronger molecular bond strength, which in in turn leads to excellent radiation hardness. Further, GaN has ultrafast carrier relaxation time. GaN transistors are promising for high-frequency applications due to their large bandgap (3.9eV) and higher breakdown field (<5MV/cm). These exceptional characteristics make GaN suitable to operate in high radiation flux environment such as fusion plasma facilities, for ultrafast detection. The expected detector temporal response is faster than 0.01-1 ns. We have been systematically testing neutron radiation effects in GaN devices and materials at Los Alamos Neutron Science Center (LANSCE) with ever increased neutron fluence levels, and at National Ignition Facility (NIF) high foot, high yield shots. In 2013 LANSCE run cycle, we tested GaN UV LED devices at 3.1E11 neutrons/cm^2. In 2015-2016 LANSCE run cycles, we have been operating three neutron beam lines with fluence level 1.2E11, 1.5E13, and 1E15 neutrons/cm^2. The irradiated samples include GaN UV LEDs, GaN HEMTs, and GaN substrates. In the experiments up to 2015 run cycle, we have characterized electrical and optical performances of GaN device before and after neutron irradiation, including the device IV curve measurements monitored at over the three months neutron irradiation time, and device IV curve measurements before and after NIF high yield shot irradiation. We observed no substantial degradation. These experiments firmly established GaN devices as the radiation hard platform of the next generation fusion plasma diagnostic instruments.

  14. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

    PubMed

    Fernández-Garrido, Sergio; Kong, Xiang; Gotschke, Tobias; Calarco, Raffaella; Geelhaar, Lutz; Trampert, Achim; Brandt, Oliver

    2012-12-12

    We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(0001̅) substrates to ensure a well-defined polarity and an absence of structural and morphological defects. On N-polar AlN, a homogeneous and dense N-polar GaN nanowire array forms, evidencing that GaN nanowires form spontaneously in the absence of defects. On Al-polar AlN, we do not observe the formation of Ga-polar GaN NWs. Instead, sparse N-polar GaN nanowires grow embedded in a Ga-polar GaN layer. These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Due to the strong impact of the polarity on the properties of GaN-based devices, these results are not only essential to understand the spontaneous formation of GaN nanowires but also of high technological relevance.

  15. Si in GaN -- On the nature of the background donor

    SciTech Connect

    Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W.

    1996-08-01

    A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

  16. Growth and properties of bulk single crystals of GaN

    SciTech Connect

    Suski, T.; Perlin, P.; Leszczynski, M.

    1996-11-01

    In this paper the authors review recent developments in the growth of bulk GaN crystals by a high-pressure, high-temperature method. They also provide information on various physical properties of bulk GaN material. Then, some preliminary results on the homoepitaxial growth of GaN are given. In the second part of this paper the authors discuss the following problems: the possible origin of the large free electron concentration in undoped GaN material, the parasitic effect of yellow luminescence and the nature of Zn- and Mg-acceptors.

  17. Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study

    DTIC Science & Technology

    2007-06-27

    the sheet resistance between Ga- polar and mixed-polar GaN films. Highly resistive Ga-polar GaN is advantageous in optoelectronic and electronic device...re si st an ce [ M Ω /s q. ] 108642 2nd nitridation time [min] (b) Figure 5. Sheet resistance of GaN grown on AlN region for the first set of LT...AlN layers deposited for 4, 6, and 8 min. 2nd nitridation time after ex-situ process was kept at 950°C for 1 min. (b) Sheet resistance of GaN grown on

  18. Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

    NASA Astrophysics Data System (ADS)

    Chen, X. J.; Perillat-Merceroz, G.; Sam-Giao, D.; Durand, C.; Eymery, J.

    2010-10-01

    The shape of c-oriented GaN nanostructures is found to be directly related to the crystal polarity. As evidenced by convergent beam electron diffraction applied to GaN nanostructures grown by metal-organic vapor phase epitaxy on c-sapphire substrates: wires grown on nitridated sapphire have the N-polarity ([0001¯]) whereas pyramidal crystals have Ga-polarity ([0001]). In the case of homoepitaxy, the GaN wires can be directly selected using N-polar GaN freestanding substrates and exhibit good optical properties. A schematic representation of the kinetic Wulff's plot points out the effect of surface polarity.

  19. Structural defects in GaN revealed by Transmission Electron Microscopy

    DOE PAGES

    Liliental-Weber, Zuzanna

    2014-09-08

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  20. Characterizations of GaN film growth by ECR plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fu, Silie; Chen, Junfang; Zhang, Hongbin; Guo, Chaofen; Li, Wei; Zhao, Wenfen

    2009-06-01

    The electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition technology (ECR-MOPECVD) is adopted to grow GaN films on (0 0 0 1) α-Al2O3 substrate. The gas sources are pure N2 and trimethylgallium (TMG). Optical emission spectroscopy (OES) and thermodynamic analysis of GaN growth are applied to understand the GaN growth process. The OES of ECR plasma shows that TMG is significantly dissociated in ECR plasma. Reactants N and Ga in the plasma, obtained easily under the self-heating condition, are essential for the GaN growth. They contribute to the realization of GaN film growth at a relatively low temperature. The thermodynamic study shows that the driving force for the GaN growth is high when N2:TMG>1. Furthermore, higher N2:TMG flow ratio makes the GaN growth easier. Finally, X-ray diffraction, photoluminescence, and atomic force microscope are applied to investigate crystal quality, morphology, and roughness of the GaN films. The results demonstrate that the ECR-MOPECVD technology is favorable for depositing GaN films at low temperatures.

  1. Optical and field emission properties of layer-structure GaN nanowires

    SciTech Connect

    Cui, Zhen; Li, Enling; Shi, Wei; Ma, Deming

    2014-08-15

    Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

  2. Demonstration of flexible thin film transistors with GaN channels

    NASA Astrophysics Data System (ADS)

    Bolat, S.; Sisman, Z.; Okyay, A. K.

    2016-12-01

    We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C. TFTs exhibit 103 on-to-off current ratios and are shown to exhibit proper transistor saturation behavior in their output characteristics. Gate bias stress tests reveal that flexible GaN TFTs have extremely stable electrical characteristics. Overall fabrication thermal budget is below 200 °C, the lowest reported for the GaN based transistors so far.

  3. Improved photoelectrochemical performance of GaN nanopillar photoanodes.

    PubMed

    Narangari, Parvathala Reddy; Karuturi, Siva Krishna; Lysevych, Mykhaylo; Hoe Tan, Hark; Jagadish, Chennupati

    2017-04-18

    In this work, we report on the photoelectrochemical (PEC) investigation of n-GaN nanopillar (NP) photoanodes fabricated using metal organic chemical vapour deposition and the top-down approach. Substantial improvement in photocurrents is observed for GaN NP photoanodes compared to their planar counterparts. The role of carrier concentration and NP dimensions on the PEC performance of NP photoanodes is further elucidated. Photocurrent density is almost doubled for doped NP photoanodes whereas no improvement is noticed for undoped NP photoanodes. While the diameter of GaN NP is found to influence the onset potential, carrier concentration is found to affect both the onset and overpotential of the electrodes. Optical and electrochemical impedance spectroscopy characterisations are utilised to further explain the PEC results of NP photoanodes. Finally, improvement in the photostability of NP photoanodes with the addition of NiO as a co-catalyst is investigated.

  4. Size dictated thermal conductivity of GaN

    SciTech Connect

    Thomas Edwin Beechem; McDonald, Anthony E.; Fuller, Elliot James; Talin, Albert Alec; Rost, Christina M.; Maria, Jon -Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

    2016-04-01

    The thermal conductivity on n- and p-type doped gallium nitride (GaN) epilayers having thickness of 3-4 μm was investigated using time domain thermoreflectance (TDTR). Despite possessing carrier concentrations ranging across 3 decades (1015 – 1018 cm–3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends–and their overall reduction relative to bulk–are explained leveraging established scattering models where it is shown that size effects play a primary role in limiting thermal conductivity for layers even tens of microns thick. GaN device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

  5. Selective excitation of the yellow luminescence of GaN

    SciTech Connect

    Colton, J.S.; Yu, P.Y.; Teo, K.L.; Weber, E.R.; Grzegory, I.; Uchida, K.

    1999-07-01

    The yellow luminescence of n-type GaN has been studied with selective excitation using a combination of Ar ion and dye lasers. Narrower structures whose peak energies follow the excitation photon energy over the width of the yellow luminescence have been observed. Unlike the yellow luminescence excited by above band gap excitations, these fine structures exhibits thermal activated quenching behavior. We propose that these fine structures are due to emission occurring at complexes of shallow donors and deep acceptors which can be resonantly excited by photons with energies below the band gap. The activation energy deduced from their intensity is that for delocalization of electrons out of the complexes. Our results therefore suggest that there is more than one recombination channel (usually assumed to be due to distant donor-acceptor pairs) to the yellow luminescence in GaN.

  6. Improved photoelectrochemical performance of GaN nanopillar photoanodes

    NASA Astrophysics Data System (ADS)

    Reddy Narangari, Parvathala; Krishna Karuturi, Siva; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati

    2017-04-01

    In this work, we report on the photoelectrochemical (PEC) investigation of n-GaN nanopillar (NP) photoanodes fabricated using metal organic chemical vapour deposition and the top-down approach. Substantial improvement in photocurrents is observed for GaN NP photoanodes compared to their planar counterparts. The role of carrier concentration and NP dimensions on the PEC performance of NP photoanodes is further elucidated. Photocurrent density is almost doubled for doped NP photoanodes whereas no improvement is noticed for undoped NP photoanodes. While the diameter of GaN NP is found to influence the onset potential, carrier concentration is found to affect both the onset and overpotential of the electrodes. Optical and electrochemical impedance spectroscopy characterisations are utilised to further explain the PEC results of NP photoanodes. Finally, improvement in the photostability of NP photoanodes with the addition of NiO as a co-catalyst is investigated.

  7. Erbium Doped GaN Lasers by Optical Pumping

    DTIC Science & Technology

    2016-07-13

    P.O. Box 12211 Research Triangle Park, NC 27709-2211 Er doped GaN, gain medium, high energy laser, optical pump REPORT DOCUMENTATION PAGE 11. SPONSOR...Nanophotonics Center, Texas Tech University Lubbock, TX 79409-3102 jingyu.lin@ttu.edu; hx.jiang@ttu.edu I. Summary of Progress High energy and...emerging technologies. The optical gain medium is the heart of a high energy laser (HEL) system. Comparing with the presently dominant gain material

  8. 7 CFR 11.22 - Functions.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    .... (a) Director. Provides executive direction for NAD. The Director is responsible for developing and... respond to all FOIA requests concerning appeal decisions and case records maintained by NAD. (b) Deputy Director for Hearings and Administration. Responsible for all administrative functions of NAD,...

  9. 7 CFR 11.22 - Functions.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    .... (a) Director. Provides executive direction for NAD. The Director is responsible for developing and... respond to all FOIA requests concerning appeal decisions and case records maintained by NAD. (b) Deputy Director for Hearings and Administration. Responsible for all administrative functions of NAD,...

  10. 7 CFR 11.22 - Functions.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    .... (a) Director. Provides executive direction for NAD. The Director is responsible for developing and... respond to all FOIA requests concerning appeal decisions and case records maintained by NAD. (b) Deputy Director for Hearings and Administration. Responsible for all administrative functions of NAD,...

  11. 7 CFR 11.22 - Functions.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    .... (a) Director. Provides executive direction for NAD. The Director is responsible for developing and... respond to all FOIA requests concerning appeal decisions and case records maintained by NAD. (b) Deputy Director for Hearings and Administration. Responsible for all administrative functions of NAD,...

  12. MgCaO Dry Etching on GaN

    NASA Astrophysics Data System (ADS)

    Hlad, M.; Ren, F.

    2005-11-01

    MgCaO films grown by rf plasma-assisted Molecular Beam Epitaxy and capped with Sc2O3 are promising candidates as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors (HEMTs) and metal-oxide semiconductor HEMTs (MOS-HEMTs) respectively. Two different plasma chemistries were examined for etching these thin films on GaN. Inductively Coupled Plasmas of CH4/H2/Ar produced etch rates only in the range 20-70 å/min, comparable to the Ar sputter rates under the same conditions. Similarly slow MgCaO etch rates (˜100 å/min) were obtained with Cl2/Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher. The MgCaO removal rates are limited by the low volatilities of the respective etch products. The CH4/H2/Ar plasma chemistry produced a selectivity of around 2 or etching the MgCaO with respect to GaN.

  13. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  14. Metal contacts on ZnSe and GaN

    SciTech Connect

    Duxstad, Kristin Joy

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  15. Study of neutron irradiated structures of ammonothermal GaN

    NASA Astrophysics Data System (ADS)

    Gaubas, E.; Ceponis, T.; Deveikis, L.; Meskauskaite, D.; Miasojedovas, S.; Mickevicius, J.; Pavlov, J.; Pukas, K.; Vaitkus, J.; Velicka, M.; Zajac, M.; Kucharski, R.

    2017-04-01

    Study of the radiation damage in GaN-based materials becomes an important aspect for possible application of the GaN detectors in the harsh radiation environment at the Large Hadron Collider and at other particle acceleration facilities. Intentionally doped and semi-insulating bulk ammonothermal GaN materials were studied to reveal the dominant defects introduced by reactor neutron irradiations. These radiation defects have been identified by combining electron spin resonance and transmission spectroscopy techniques. Characteristics of carrier lifetime dependence on neutron irradiation fluence were examined. Variations of the response of the capacitor-type sensors with neutron irradiation fluence have been correlated with the carrier lifetime changes. The measurements of the photoconductivity and photoluminescence transients have been used to study the variation of the parameters of radiative and non-radiative recombination. The examined characteristics indicate that AT GaN as a particle sensing material is radiation hard up to high hadron fluences  ⩾1016 cm‑2.

  16. Dislocation core structures in Si-doped GaN

    SciTech Connect

    Rhode, S. L. Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  17. Theoretical investigation of GaN carbon doped

    NASA Astrophysics Data System (ADS)

    Espitia Rico, M. J.; Moreno Armenta, M. G.; Rodríguez, J. A.; Takeuchi, N.

    2016-02-01

    In this work we used first principles calculations in the frame of density functional theory (DFT) in order to study the structural and electronic properties of GaN doped with carbon. The computational calculations were carried out by a method based on plane waves pseudopotentials, as implemented in the Quantum Espresso code. In the wurtzite type GaN supercell the nitrogen atoms were replaced by carbon atoms (C by N) and then also the gallium atoms by carbon atoms (C by Ga). The carbon concentrations in the GaN volume was set as x=25, 50 y 75%. For each concentration x of carbon the formation energy was calculated for the substitutions C by N and CxGa. We found that it is more energetically favourable that the carbon atoms occupy the positions of the nitrogen atoms (C by N), because in all the x concentrations of carbon the formation energies were lower than that in the substitutions (C by Ga). It was found that the new compounds CxGaN1-x have higher bulk moduli. So they are very rigid. This property makes them good candidates for applications in hard coatings or devices for high power and temperatures. Analysis of the density of states show that the new CxGaN1-x ternary compound have metallic behaviour that comes essentially from the hybridization states N-p and C-p cross the Fermi level.

  18. Theoretical and Experiment Study of Cathodoluminescence of GaN

    NASA Astrophysics Data System (ADS)

    Ben Nasr, F.; Matoussi, A.; Salh, R.; Boufaden, T.; Guermazi, S.; Fitting, H.-J.; Eljani, B.; Fakhfakh, Z.

    2007-09-01

    In this work, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers with thickness (1-3) micron grown at 800 °C by MOVPE on silicon substrate. The CL measurements were performed in a digital scanning electron microscope DSM 960 at room temperature. The CL spectra recorded at room temperature (RT) show the main UV peak at 3.42 eV of the fundamental transition and a broad yellow band at 2.2 eV attributed the intrinsic defects and extrinsic dopants and impurities. The simulation of the CL excitation and intensity is developed using consistent 2-D model based on the electron beam energy dissipation and taking into account the effects of carrier diffusion, internal absorption and the recombination processes in GaN. Then, we have investigated the evolution of the CL intensity from GaN as a function the electron beam energy in the range Eo = (5-20) keV. A comparative study between experimental and simulated CL spectra at room temperature is presented.

  19. Nucleation conditions for catalyst-free GaN nanowires

    NASA Astrophysics Data System (ADS)

    Bertness, K. A.; Roshko, A.; Mansfield, L. M.; Harvey, T. E.; Sanford, N. A.

    2007-03-01

    We have examined the initial steps for catalyst-free growth of GaN nanowires by molecular beam epitaxy (MBE) on Si (1 1 1) substrates using AlN buffer layers. These wires form spontaneously under high N-to-Ga ratios for a growth temperature range of about 810-830 °C. Field emission scanning electron microscopy (FESEM) shows that part of the GaN forms a "matrix layer" that also grows with the [0 0 0 1] direction perpendicular to the substrate surface. This layer contains small, dense hexagonal pits in which the nanowires nucleate. Using both FESEM and atomic force microscopy (AFM), we identify the pit facets as {1 0 1¯ 2} planes. The nucleation studies show that the use of an AlN buffer layer is essential to the regular formation of the nanowires and matrix layers under our growth conditions. Our typical AlN buffer layer is 40-50 nm thick. We conclude that the nucleation mechanism for nanowires includes formation of nanocolumns in the AlN buffer layer. The propagation of the nanowires in GaN growth appears to be driven by differences in growth rates among crystallographic planes under N-rich conditions.

  20. Understanding the pyramidal growth of GaN

    SciTech Connect

    Rouviere, J.L.; Arlery, M.; Bourret, A.

    1996-11-01

    By a combination of conventional, HREM and CBED TEM experiments the authors have studied wurtzite GaN layers grown by Metal-Organic Chemical Vapor Deposition (MOCVD) on (0001)Al{sub 2}O{sub 3}. They experimentally determine the structure of the macroscopic hexagonal pyramids that are visible at the surface of the layers when no optimized buffer is introduced. These pyramids look like hexagonal volcanoes with one hexagonal microscopic chimney (up to 75 nm wide) at their core. The crystal inside the chimney is a pure GaN crystal with a polarity opposed to the one of the neighboring material: the GaN layers grown on (0001)Al{sub 2}O{sub 3} are everywhere Ga-terminated except in the chimneys where they are N-terminated. Some of the N-terminated chimneys grow faster and form macroscopic hexagonal pyramids. Chimneys bounded by Inversion Domains Boundaries (IDBs) originate from steps at the surface of the substrate and may be suppressed by an adapted buffer layer.

  1. Magnesium diffusion profile in GaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Benzarti, Z.; Halidou, I.; Bougrioua, Z.; Boufaden, T.; El Jani, B.

    2008-07-01

    The diffusion of magnesium has been studied in GaN layers grown on sapphire substrate by atmospheric pressure metalorganic vapor-phase-epitaxy (MOVPE) in a "home-made" reactor. Secondary Ion Mass Spectroscopy (SIMS) was used to visualise the Mg profiles in two kinds of multi-sublayer GaN structures. One structure was grown with a variable flow of Ga precursor (TMG) and the second one with a variable growth temperature. In both cases, the Mg dopant precursor (Cp 2Mg) flow was kept constant. Using the second Fick's law to fit the experimental SIMS data, we have deduced an increasing then a saturating Mg diffusion coefficient versus the Mg concentration. Mg incorporation was found to get higher for lower growth rate, i.e. when TMG flow is reduced. Furthermore, based on the temperature-related behaviour we have found that the activation energy for Mg diffusion coefficient in GaN was 1.9 eV. It is suggested that Mg diffuses via substitutional sites.

  2. Abnormal selective area growth of irregularly-shaped GaN structures on the apex of GaN pyramids and its application for wide spectral emission

    NASA Astrophysics Data System (ADS)

    Yu, Yeon Su; Lee, Jun Hyeong; Ahn, Hyung Soo; Yang, Min

    2014-12-01

    We report on the growth and the characterization of three-dimensional randomly-shaped InGaN/GaN structures selectively grown on the apex of GaN pyramids for the purpose of enlarging the emission spectral range. We found that the variations in the shape and the size of the three-dimensional GaN structures depend on the growth temperature and the surface area for selective growth under intentional turbulence in the gas stream. The selectively grown GaN structures grown at 1020 °C have irregular shape, while the samples grown at 1100 °C have rather uniform hexagonal pyramidal shapes. Irregularly shaped GaN structures were also obtained on the apex of GaN pyramids when the SiO2 mask was removed to 1/10 of the total height of the underlying GaN pyramid. When only 1/5 of the SiO2 mask was removed, however, the selectively grown GaN structures had similar hexagonal pyramidal shapes resembling those of the underlying GaN pyramids. The CL (Cathodoluminescence) spectra of the InGaN layers grown on the randomly shaped GaN structures showed a wide emission spectral range from 388 to 433 nm due to the non-uniform thickness and spatially inhomogeneous indium composition of the InGaN layers. This new selective growth method might have great potential for applications of non-phosphor white light emitting diodes (LEDs) with optimized growth conditions for InGaN active layers of high indium composition and with optimum process for fabrication of electrodes for electrical injection.

  3. Genetic mapping of semi-polar metabolites in pepper fruits (Capsicum sp.): towards unravelling the molecular regulation of flavonoid quantitative trait loci.

    PubMed

    Wahyuni, Yuni; Stahl-Hermes, Vanessa; Ballester, Ana-Rosa; de Vos, Ric C H; Voorrips, Roeland E; Maharijaya, Awang; Molthoff, Jos; Zamora, Marcela Viquez; Sudarmonowati, Enny; Arisi, Ana Carolina Maisonnave; Bino, Raoul J; Bovy, Arnaud G

    2014-01-01

    Untargeted LCMS profiling of semi-polar metabolites followed by metabolite quantitative trait locus (mQTL) analysis was performed in ripe pepper fruits of 113 F2 plants derived from a cross between Capsicum annuum AC1979 (no. 19) and Capsicum chinense No. 4661 Selection (no. 18). The parental accessions were selected based on their variation in fruit morphological characteristics and fruit content of some target phytonutrients. Clear segregation of fruit colour and fruit metabolite profiles was observed in the F2 population. The F2 plants formed three clusters based on their metabolite profiles. Of the total of 542 metabolites, 52 could be annotated, including a range of flavonoids, such as flavone C-glycosides, flavonol O-glycosides and naringenin chalcone, as well as several phenylpropanoids, a capsaicin analogue, fatty acid derivatives and amino acid derivatives. Interval mapping revealed 279 mQTLs in total. Two mQTL hotspots were found on chromosome 9. These two chromosomal regions regulated the relative levels of 35 and 103 metabolites, respectively. Analysis also revealed an mQTL for a capsaicin analogue, located on chromosome 7. Confirmation of flavonoid mQTLs using a set of six flavonoid candidate gene markers and their corresponding expression data (expression QTLs) indicated the Ca-MYB12 transcription factor gene on chromosome 1 and the gene encoding flavone synthase (FS-2) on chromosome 6 as likely causative genes determining the variation in naringenin chalcone and flavone C-glycosides, respectively, in this population. The combination of large-scale metabolite profiling and QTL analysis provided valuable insight into the genomic regions and genes important for the production of (secondary) metabolites in pepper fruit. This will impact breeding strategies aimed at optimising the content of specific metabolites in pepper fruit.

  4. Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

    PubMed

    Kang, Eun-Sil; Ju, Jin-Woo; Kim, Jin Soo; Ahn, Haeng-Keun; Lee, June Key; Kim, Jin Hyeok; Shin, Dong-Chan; Lee, In-Hwan

    2007-11-01

    InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along (1120) direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the nonuniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

  5. Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Lee, Donghyun; Shin, In-Su; Jin, Lu; Kim, Donghyun; Park, Yongjo; Yoon, Euijoon

    2016-06-01

    Nanoheteroepitaxy (NHE) of GaN on an AlN/Si(111) nanorod structure was investigated by metal-organic chemical vapor deposition. Silica nanosphere lithography was employed to fabricate a periodic hexagonal nanorod array with a narrow gap of 30 nm between the nanorods. We were successful in obtaining a fully coalesced GaN film on the AlN/Si(111) nanorod structure. Transmission electron microscopy revealed that threading dislocation (TD) bending and termination by stacking faults occurred near the interface between GaN and the AlN/Si(111) nanorods, resulting in the reduction of TD density for the NHE GaN layer. The full width at half-maximum of the X-ray rocking curve for (102) plane of the NHE GaN was found to decrease down to 728 arcsec from 1005 arcsec for the GaN layer on a planar AlN/Si(111) substrate, indicating that the crystalline quality of the NHE GaN was improved. Also, micro-Raman measurement showed that tensile stress in the NHE GaN layer was reduced significantly as much as 70% by introducing air voids between the nanorods.

  6. Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koh; Yamaoka, Yuya; Ubukata, Akinori; Arimura, Tadanobu; Piao, Guanxi; Yano, Yoshiki; Tokunaga, Hiroki; Tabuchi, Toshiya

    2016-05-01

    The current situation and next challenge in GaN metal organic chemical vapor deposition (MOCVD) for electron devices of both GaN on Si and GaN on GaN are presented. We have examined the possibility of increasing the growth rate of GaN on 200-mm-diameter Si by using a multiwafer production MOCVD machine, in which the vapor phase parasitic reaction is well controlled. The impact of a high-growth-rate strained-layer-superlattice (SLS) buffer layer is presented in terms of material properties. An SLS growth rate of as high as 3.46 µm/h, which was 73% higher than the current optimum, was demonstrated. As a result, comparable material properties were obtained. Next, a typical result of GaN doped with Si of 1 × 1016 cm-3 grown at the growth rate of 3.7 µm/h is shown. For high-voltage application, we need a thick high-purity GaN drift layer with a low carbon concentration, of less than 1016 cm-3. It is shown that achieving a high growth rate by precise control of the vapor phase reaction is still challenge in GaN MOCVD.

  7. Terahertz study of m-plane GaN thin fims

    NASA Astrophysics Data System (ADS)

    Quadir, Shaham; Jang, Der-Jun; Lin, Ching-Liang; Lo, Ikai

    2014-03-01

    We investigate the optical properties of m-plane GaN thin films using the terahertz time domain spectroscopy. The m-plane GaN thin films were grown on γ-LiAlO2 substrates with buffer layers of low temperature grown GaN. The thin films were illuminated with terahertz radiation generated by a LT-GaAs antenna and the transmitted signal was detected by a ZnTe crystal. The polarization of the terahertz wave was chosen to be either parallel or perpendicular to the GaN [0001] direction. We compared the transmitted signals of the m-plane GaN thin films to that of the LAO substrate. The samples as well as the LAO substrate exhibited polarization dependence of absorption in terahertz spectrum. The carrier densities and the mobilities were derived from the transmittance of the THz wave using extended Drude model. We found, in all samples, both the carrier densities and mobilities along the GaN [0001] direction were smaller than those along the GaN [1120] direction due to the stripe formation along the GaN [1120].

  8. Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

    PubMed Central

    Braniste, Tudor; Tiginyanu, Ion; Horvath, Tibor; Raevschi, Simion; Cebotari, Serghei; Lux, Marco; Haverich, Axel

    2016-01-01

    Summary Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle–cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN) semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated. The effect of free GaN nanoparticles versus the effect of growing endothelial cells on GaN functionalized surfaces was examined. To functionalize surfaces with GaN, GaN nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO) nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial cells grown on surfaces functionalized with GaN nanoparticles demonstrated excellent adhesion and proliferation, suggesting good biocompatibility of the nanostructured GaN. PMID:27826507

  9. Hole-induced d0 ferromagnetism enhanced by Na-doping in GaN

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Li, Feng

    2017-02-01

    The d0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature.

  10. Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

    NASA Astrophysics Data System (ADS)

    Yeh, Ting-Wei; Lin, Yen-Ting; Ahn, Byungmin; Stewart, Lawrence S.; Daniel Dapkus, P.; Nutt, Steven R.

    2012-01-01

    We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.

  11. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    NASA Astrophysics Data System (ADS)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-07-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

  12. Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth

    NASA Astrophysics Data System (ADS)

    Kidoguchi, Isao; Ishibashi, Akihiko; Sugahara, Gaku; Tsujimura, Ayumu; Ban, Yuzaburoh

    2000-05-01

    Air-bridged lateral epitaxial growth (ABLEG), a new technique of lateral growth of GaN films, has been developed using low-pressure metalorganic vapor phase epitaxy. A previously grown 1-μm-thick GaN film is grooved along the < 1{\\bar 1}00 >\\textrm{GaN} direction, and the bottoms of the trenches and the sidewalls are covered with a silicon nitride mask. A free-standing GaN material is regrown from the exposed (0001) surface of the ridged GaN seed structure. Cross-sectional transmission electron microscopy analysis reveals that the dislocations originating from the underlying seed GaN extend straight in the < 0001 > direction and dislocations do not propagate into the wing region. The wing region also exhibits a smooth surface and the root mean square roughness is found to be 0.088 nm by atomic force microscopy measurement of the (0001) face of the wing region.

  13. Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

    NASA Astrophysics Data System (ADS)

    Koblmüller, G.; Reurings, F.; Tuomisto, F.; Speck, J. S.

    2010-11-01

    The effect of Ga/N flux ratio on surface morphology, incorporation of point defects and electrical transport properties of GaN films grown by plasma-assisted molecular beam epitaxy in a recently developed high-temperature growth regime was investigated. The homoepitaxial (0001) GaN films grown at ˜780-790 °C showed smoothest morphologies near the cross-over between N-rich and Ga-rich growth (0.75<Ga/N<1.1) contrasting previous observations for low-temperature growth. The higher-quality growth near Ga/N˜1 resulted from lower thermal decomposition rates and was corroborated by slightly lower Ga vacancy concentrations [VGa], lower unintentional oxygen incorporation, and improved electron mobilities. The consistently low [VGa], i.e., ˜1016 cm-3 for all films attribute further to the significant benefits of the high-temperature growth regime.

  14. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN /GaN multi-quantum wells

    NASA Astrophysics Data System (ADS)

    Keller, S.; Schaake, C.; Fichtenbaum, N. A.; Neufeld, C. J.; Wu, Y.; McGroddy, K.; David, A.; DenBaars, S. P.; Weisbuch, C.; Speck, J. S.; Mishra, U. K.

    2006-09-01

    GaN nanopillar and nanostripe arrays with embedded InGaN /GaN multi-quantum wells (MQWs) were fabricated by holographic lithography and subsequent reactive ion etching. Etch related damage of the nanostructures was successfully healed through annealing in NH3/N2 mixtures under optimized conditions. The nanopatterned samples exhibited enhanced luminescence in comparison to the planar wafers. X-ray reciprocal space maps recorded around the asymmetric (101¯5) reflection revealed that the MQWs in both nanopillars and nanostripes relaxed after nanopatterning and adopted a larger in-plane lattice constant than the underlying GaN layer. The pillar relaxation process had no measurable effect on the Stokes shift typically observed in MQWs on c-plane GaN, as evaluated by excitation power dependent photoluminescence (PL) measurements. Angular-resolved PL measurements revealed the extraction of guided modes from the nanopillar arrays.

  15. 1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

    NASA Astrophysics Data System (ADS)

    Liu, Xinke; Liu, Qiang; Li, Chao; Wang, Jianfeng; Yu, Wenjie; Xu, Ke; Ao, Jin-Ping

    2017-02-01

    In this paper, we report the formation of vertical GaN Schottky barrier diodes (SBDs) on a 2-in. free-standing (FS) GaN wafer, using CMOS-compatible contact material. By realizing an off-state breakdown voltage V BR of 1200 V and an on-state resistance R on of 7 mΩ·cm2, the FS-GaN SBDs fabricated in this work achieve a power device figure-of-merit V\\text{BR}2/R\\text{on} of 2.1 × 108 V2·Ω-1·cm-2 on a high quality GaN wafer. In addition, the fabricated FS-GaN SBDs show the highest I on/I off current ratio of ˜2.3 × 1010 among the GaN SBDs reported in the literature.

  16. Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

    NASA Astrophysics Data System (ADS)

    Oto, Takao; Mizuno, Yutaro; Yanagihara, Ai; Miyagawa, Rin; Kano, Tatsuya; Yoshida, Jun; Sakakibara, Naoki; Kishino, Katsumi

    2016-11-01

    The influence of GaN column diameter DGaN on structural properties was systematically investigated for InGaN nanocolumns (NCs) grown on top of GaN NCs. We demonstrated a large critical layer thickness of above 400 nm for In0.3Ga0.7N/GaN NCs. The structural properties were changed at the boundary of DGaN=D0 (˜120 nm). Homogeneous InGaN NCs grew axially on the GaN NCs with DGaN≤D0, while InGaN-InGaN core-shell structures were spontaneously formed on the GaN NCs with DGaN>D0. These results can be explained by a growth system that minimizes the total strain energy of the NCs.

  17. Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer

    NASA Astrophysics Data System (ADS)

    Park, S. H.; Park, J.; You, D.-J.; Joo, K.; Moon, D.; Jang, J.; Kim, D.-U.; Chang, H.; Moon, S.; Song, Y.-K.; Lee, G.-D.; Jeon, H.; Xu, J.; Nanishi, Y.; Yoon, E.

    2012-05-01

    A simple and inexpensive technique to improve the emission efficiency of nonpolar a-plane light emitting diodes (LEDs) is proposed. The 3-dimensional growth nature of a-plane GaN was utilized to form the regrowth template of a-plane GaN. Subsequently, the controlled integration of silica nano-spheres (CIS) into the regrowth template is performed to improve the crystal quality of a-plane GaN by epitaxial lateral overgrowth method. In addition, the CIS improves light extraction by the scattering process. The light output power from the CIS a-plane GaN LEDs showed 130%-150% increase compared to that of LED without silica nano-spheres.

  18. Rokumi-jio-gan-Containing Prescriptions Attenuate Oxidative Stress, Inflammation, and Apoptosis in the Remnant Kidney

    PubMed Central

    Park, Chan Hum; Lee, Sul Lim; Okamoto, Takuya; Tanaka, Takashi; Yokozawa, Takako

    2012-01-01

    Two Rokumi-jio-gan-containing prescriptions (Hachimi-jio-gan and Bakumi-jio-gan) were selected to examine their actions in nephrectomized rats. Each prescription was given orally to rats for 10 weeks after the excision of five-sixths of their kidney volumes, and its effect was compared with non-nephrectomized and normal rats. Rats given Hachimi-jio-gan and Bakumi-jio-gan showed an improvement of renal functional parameters such as serum urea nitrogen, creatinine, creatinine clearance, and urinary protein. The nephrectomized rats exhibited the up-regulation of nicotinamide adenine dinucleotide phosphate oxidase subunits, c-Jun N-terminal kinase (JNK), phosphor-JNK, c-Jun, transforming growth factor-β1, nuclear factor-kappa B, cyclooxygenase-2, inducible nitric oxide synthase, monocyte chemotactic protein-1, intracellular adhesion molecule-1, Bax, cytochrome c, and caspase-3, and down-regulation of NF-E2-related factor 2, heme oxygenase-1, and survivin; however, Bakumi-jio-gan administration acts as a regulator in inflammatory reactions caused by oxidative stress in renal failure. Moreover, the JNK pathway and apoptosis-related protein expressions, Bax, caspase-3, and survivin, were ameliorated to the normal levels by Hachimi-jio-gan administration. The development of renal lesions, glomerular sclerosis, tubulointerstitial damage, and arteriolar sclerotic lesions, estimated by histopathological evaluation and scoring, was strong in the groups administered Hachimi-jio-gan rather than Bakumi-jio-gan. This study suggests that Rokumi-jio-gan-containing prescriptions play a protective role in the progression of renal failure. PMID:23243456

  19. Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications

    NASA Astrophysics Data System (ADS)

    Singh, R.; Radu, I.; Bruederl, G.; Eichler, C.; Haerle, V.; Gösele, U.; Christiansen, S. H.

    2007-04-01

    Two-inch free-standing GaN wafers were implanted by 100 keV H+2 ions with a dose of 1.3 × 1017 cm-2 at room temperature. The hydrogen implantation induced damage in GaN extends between 230 to 500 nm from the surface as measured by cross-sectional transmission electron microscopy (XTEM). The wafer bow of the free-standing GaN wafers was measured using a Tencor long range profilometer on a scan length of 48 mm before and after the hydrogen implantation. Before implantation the bow of two different free-standing GaN wafers (named A and B) with different thicknesses was 1.5 µm and 6 µm, respectively. Initially, both wafers were concave in shape. After implantation the bow changed to convex with a value of 36 µm for wafer A and a value of 32 µm for wafer B. High dose hydrogen implantation leads to an in-plane compressive stress in the top damaged layer of the GaN, which is responsible for the enhancement of wafer bow and change of bow direction. The high value of bow after implantation hinders the direct wafer bonding of the free-standing GaN wafers to sapphire or any other handle wafers. Tight bonding between hydrogen implanted GaN wafers and the handle wafers is a necessary requirement for the successful layer transfer of thin GaN layers onto other substrates based on wafer bonding and layer splitting (Smart-cut).

  20. Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Chen, Jianli; Cheng, Hongjuan; Zhang, Song; Lan, Feifei; Qi, Chengjun; Xu, Yongkuan; Wang, Zaien; Li, Jing; Lai, Zhanping

    2016-10-01

    In this paper, a microporous structure at the GaN/sapphire interface has been obtained by an electrochemical etching method via a selective etching progress using an as-grown GaN/sapphire wafer grown by metal organic chemical vapor deposition. The as-prepared GaN interfacial microporous structure has been used as a template for the following growth of thick-film GaN crystal by hydride vapor phase epitaxy (HVPE), facilitating the fabrication of a free-standing GaN substrate detached from a sapphire substrate. The evolution of the interfacial microporous structure has been investigated by varying the etching voltages and time, and the formation mechanism of interfacial microporous structure has been discussed in detail as well. Appropriate interfacial microporous structure is beneficial for separating the thick GaN crystal grown by HVPE from sapphire during the cooling down process. The separation that occurred at the place of interfacial microporous can be attributed to the large thermal strain between GaN and sapphire. This work realized the fabrication of a free-standing GaN substrate with high crystal quality and nearly no residual strain.

  1. Optical properties of GaN wurtzite quantum wires

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Xia, J. B.

    2006-03-01

    The electronic structure and optical properties of freestanding GaN wurtzite quantum wires are studied in the framework of six-band effective-mass envelope function theory. It is found that the electron states are either twofold or fourfold degenerate. There is a dark exciton effect when the radius R of GaN wurtzite quantum wires is in the range of [0.7, 10.9] nm. The linear polarization factors are calculated in three cases, the quantum confinement effect (finite long wire), the dielectric effect and both effects (infinitely long wire). It is found that the linear polarization factor of a finite long wire whose length is much less than the electromagnetic wavelength decreases as R increases, is very close to unity (0.979) at R = 1 nm, and changes from a positive value to a negative value around R = 4.1 nm. The linear polarization factor of the dielectric effect is 0.934, independent of radius, as long as the radius remains much less than the electromagnetic wavelength. The result for the two effects shows that the quantum confinement effect gives a correction to the dielectric effect result. It is found that the linear polarization factor of very long (treated approximately as infinitely long) quantum wires is in the range of [0.8, 1]. The linear polarization factors of the quantum confinement effect of CdSe wurtzite quantum wires are calculated for comparison. In the CdSe case, the linear polarization factor of R = 1 nm is 0.857, in agreement with the experimental results (Hu et al 2001 Science 292 2060). This value is much smaller than unity, unlike 0.979 in the GaN case, mainly due to the big spin-orbit splitting energy Δso of CdSe material with wurtzite structure.

  2. Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Koyama, Koji; Aida, Hideo; Kim, Seong-Woo; Ikejiri, Kenjiro; Doi, Toshiro; Yamazaki, Tsutomu

    2014-10-01

    A 600 μm thick GaN layer was successfully grown by hydride vapor phase epitaxy by replacing the standard sapphire substrate with that processed by a focused laser beam within the substrate. The effects of the laser processing on the curvature and cracking of the GaN layer were investigated. Microscopic observations of the interior of the thick GaN layer revealed that the laser-processed substrate suppressed the generation of microcracks in the GaN layer. In addition, the laser processing was also found to reduce the change in the curvature during the GaN layer growth in comparison to that on the standard substrate. It is shown that the overlapping microcracks observed in the GaN layer on the standard sapphire substrate lead to serious cracking after thick GaN layer growth.

  3. MOCVD growth of GaN on Si through novel substrate modification techniques

    NASA Astrophysics Data System (ADS)

    Gagnon, Jarod C.

    GaN is a semiconductor material with great potential for use in high power electronics and optoelectronics due to the high electron mobility, high breakdown voltage, high thermal stability, and large direct bandgap of GaN. Si is a desirable substrate material for GaN heteroepitaxy due to the low cost of production, large wafer sizes available, and current widespread use in the electronics industry. The growth of GaN/Si devices suffers from the lattice and CTE mismatches between GaN and Si and therefore multiple methods of strain reduction have been employed to counter these effects. In this work we presented two novel methods of substrate modification to promote the growth of device quality GaN on Si. Initial work focused on the implantation of AlN/Si(111) substrates with N+ ions below the AlN/Si(111) interface. A reduction in the initial compressive stress in GaN films as well as the degree of tensile stress generation during growth was observed on implanted samples. Optical microscopy of the GaN surfaces showed reduced channeling crack density on implanted substrates. Transmission electron microscopy (TEM) studies showed a disordered layer in the Si substrate at the implantation depth which consisted of a mixture of polycrystalline and amorphous Si. Evidence was provided to suggest that the disordered layer at the implantation depth was acting as a compliant layer which decoupled the GaN film from the bulk Si substrate and partially accommodated the tensile stress formed during growth and cooling. A reduction in threading dislocation (TD) density on ion implanted substrates was also observed. Additional studies showed that by increasing the lateral size of AlN islands, the tensile growth stress and TD density in GaN films on ion implanted substrates could be further reduced. XRD studies showed an expansion of the AlN lattice on implanted substrates with larger lateral island sizes. The final tensile growth stress of films on implanted substrates was further

  4. H enhancement of N vacancy migration in GaN.

    SciTech Connect

    Wixom, Ryan R.; Wright, Alan Francis

    2005-06-01

    We have used density functional theory to investigate diffusion of V{sub N}{sup +} in the presence of H{sup +}. Optimal migration pathways were determined using the climbing image nudged elastic band and directed dimer methods. Our calculations indicate that the rate-limiting barrier for VN{sub N}{sup +} migration will be reduced by 0.58 eV by interplay with H{sup +}, which will enhance migration by more than an order of magnitude at typical GaN growth temperatures.

  5. Transport mechanisms in Schottky diodes realized on GaN

    NASA Astrophysics Data System (ADS)

    Amor, Sarrah; Ahaitouf, Ali; Ahaitouf, Abdelaziz; Salvestrini, Jean Paul; Ougazzaden, Abdellah

    2017-03-01

    This work is focused on the conducted transport mechanisms involved on devices based in gallium nitride GaN and its alloys. With considering all conduction mechanisms of current, its possible to understanded these transport phenomena. Thanks to this methodology the current-voltage characteristics of structures with unusual behaviour are further understood and explain. Actually, the barrier height (SBH) is a complex problem since it depends on several parameters like the quality of the metal-semiconductor interface. This study is particularly interesting as solar cells are made on this material and their qualification is closely linked to their transport properties.

  6. High field effects of GaN HEMTs.

    SciTech Connect

    Barker, Joy; Shul, Randy John

    2004-09-01

    This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN processing is still in its infancy. One such issue had to do with surface passivation. Test samples without a surface passivation, often failed at electric fields below 50 kV/cm, due to surface breakdown. A silicon nitride passivation layer of approximately 200 nm was used to reduce the effects of surface states and premature surface breakdown. Another issue was finding quality contacts for the material, especially in the case of the AlGaN/GaN heterostructure samples. Poor contact performance in the heterostructures plagued the test structures with lower than expected velocities due to carrier injection from the contacts themselves. Using a titanium-rich ohmic contact reduced the contact resistance and stopped the carrier injection. The final test structures had an etch constriction with varying lengths and widths (8x2, 10x3, 12x3, 12x4, 15x5, and 16x4 {micro}m) and massive contacts. A pulsed voltage input and a four-point measurement in a 50 {Omega} environment was used to determine the current through and the voltage dropped across the constriction. From these measurements, the drift velocity as a function of the applied electric field was calculated and thus, the velocity-field characteristics in n-type bulk GaN and AlGaN/GaN test structures were determined. These measurements show an apparent saturation velocity near to 2.5x10{sup 7} cm/s at 180 kV/cm and 3.1x10{sup 7} cm/s, at a field of 140 kV/cm, for the bulk GaN and AlGaN heterostructure samples, respectively. These experimental drift velocities mark the highest velocities measured in these materials to date and confirm

  7. Radiation enhanced basal plane dislocation glide in GaN

    NASA Astrophysics Data System (ADS)

    Yakimov, Eugene B.; Vergeles, Pavel S.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.

    2016-05-01

    A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10 nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

  8. First-Principles Study of Defects in GaN

    DTIC Science & Technology

    2009-07-29

    energies and other properties of the Gai – VGa and Ni – VN Frenkel pairs in GaN. o Results on the binding energies and stabilities of Frenkel pairs as...Frenkel pair are interstitial Ga ( Gai ) and Ga vacancy (VGa). Gallium interstitial can occur in 3+, 2+, and 1+ charge states, depending on the Fermi...distance to the six Ga nearest neighbors are roughly the same (to within 0.15 Å). The defect level of Gai is found to lie in the upper part of the

  9. Phonon-plasmon coupled modes in GaN

    NASA Astrophysics Data System (ADS)

    Dyson, A.

    2009-04-01

    The phonon lifetime in GaN is known to exhibit a dependence on electron density. Recent noise measurements have also shown the lifetime to be temperature dependent. The source of these dependences is the coupling of the phonon and plasmon populations through the dielectric function. The effect of this anharmonicity is illustrated by comparing the frequency and wavevector dependent coupled-mode momentum relaxation rate with the phonon momentum relaxation rate obtained by Callen. A simple model that includes the anharmonic interaction and phonon migration yields phonon lifetimes depending on both electron density and temperature.

  10. Field emission from quantum size GaN structures

    NASA Astrophysics Data System (ADS)

    Yilmazoglu, O.; Pavlidis, D.; Litvin, Yu. M.; Hubbard, S.; Tiginyanu, I. M.; Mutamba, K.; Hartnagel, H. L.; Litovchenko, V. G.; Evtukh, A.

    2003-12-01

    Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2×10 17 or 3×10 18 cm -3) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/μm and the appearance of quantum-size effect in the I- V curves.

  11. Modelling of GaN quantum dot terahertz cascade laser

    NASA Astrophysics Data System (ADS)

    Asgari, A.; Khorrami, A. A.

    2013-03-01

    In this paper GaN based spherical quantum dot cascade lasers has been modelled, where the generation of the terahertz waves are obtained. The Schrödinger, Poisson, and the laser rate equations have been solved self-consistently including all dominant physical effects such as piezoelectric and spontaneous polarization in nitride-based QDs and the effects of the temperature. The exact value of the energy levels, the wavefunctions, the lifetimes of electron levels, and the lasing frequency are calculated. Also the laser parameters such as the optical gain, the output power and the threshold current density have been calculated at different temperatures and applied electric fields.

  12. Photoluminescence enhancement from GaN by beryllium doping

    NASA Astrophysics Data System (ADS)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  13. A modeling study of GaN growth by MOVPE

    SciTech Connect

    Safvi, S.A.; Kuech, T.F.; Redwing, J.M.; Tischler, M.A.

    1996-11-01

    A model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed growth rates.

  14. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

    PubMed

    Zhong, Aihua; Hane, Kazuhiro

    2012-12-27

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.

  15. Photoelectrochemical water splitting on nanoporous GaN thin films for energy conversion under visible light

    NASA Astrophysics Data System (ADS)

    Cao, Dezhong; Xiao, Hongdi; Fang, Jiacheng; Liu, Jianqiang; Gao, Qingxue; Liu, Xiangdong; Ma, Jin

    2017-01-01

    Nanoporous (NP) GaN thin films, which were fabricated by an electrochemical etching method at different voltages, were used as photoelectrodes during photoelectrochemical (PEC) water splitting in 1 M oxalic acid solution. Upon illumination at a power density of 100 mW cm‑2 (AM 1.5), water splitting is observed in NP GaN thin films, presumably resulting from the valence band edge which is more positive than the redox potential of the oxidizing species. In comparison with NP GaN film fabricated at 8 V, NP GaN obtained at 18 V shows nearly twofold enhancement in photocurrent with the maximum photo-to-hydrogen conversion efficiency of 1.05% at ~0 V (versus Ag/AgCl). This enhancement could be explained with (i) the increase of surface area and surface states, and (ii) the decrease of resistances and carrier concentration in the NP GaN thin films. High stability of the NP GaN thin films during the PEC water splitting further confirms that the NP GaN thin film could be applied to the design of efficient solar cells and solar fuel devices.

  16. Fabrication of photonic crystal circuits based on GaN ultrathin membranes by maskless lithography

    NASA Astrophysics Data System (ADS)

    Volciuc, Olesea; Braniste, Tudor; Sergentu, Vladimir; Ursaki, Veaceslav; Tiginyanu, Ion M.; Gutowski, Jürgen

    2015-06-01

    We report on maskless fabrication of photonic crystal (PhC) circuits based on ultrathin (d ~ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with diameters of 150 nm. In recent years, we have proposed and developed a cost-effective technology for GaN micro- and nanostructuring, the so-called surface charge lithography (SCL), which opened wide possibilities for a controlled fabrication of GaN ultrathin membranes. SCL is a maskless approach based on direct writing of negative charges on the surface of a semiconductor by a focused ion beam (FIB). These charges shield the material against photo-electrochemical (PEC) etching. Ultrathin GaN membranes suspended on specially designed GaN microstructures have been fabricated using a technological route based on SCL with two selected doses of ion beam treatment. Calculation of the dispersion law in nanoperforated membranes in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, and there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed. Along with this, we present the results of a comparative analysis of persistent photoconductivity (PPC) and optical quenching (OQ) effects occurring in continuous and nanoperforated ultrathin GaN suspended membranes, and assess the mechanisms behind these phenomena.

  17. Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

    NASA Astrophysics Data System (ADS)

    Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

    2016-09-01

    For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

  18. Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Gwang; Jung, Se-Hyuck; Kung, Patrick; Razeghi, Manijeh

    2006-02-01

    GaN nanotubular material is fabricated with aluminum oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminum oxide membrane with ordered nano holes is used as template. Gallium nitride is deposited at the inner wall of the nano holes in aluminum oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis condition in MOCVD is obtained successfully for the gallium nitride nanotubular material in this research. The diameter of GaN nanotube fabricated is approximately 200 ~ 250 nm and the wall thickness is about 40 ~ 50 nm. GaN nanotubular material consists of numerous fine GaN particulates with sizes ranging 15 to 30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that grains in GaN nanotubular material have nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in aluminum oxide template.

  19. Fabrication of GaN nanotubular material using MOCVD with an aluminium oxide membrane

    NASA Astrophysics Data System (ADS)

    Jung, Woo-Gwang; Jung, Se-Hyuck; Kung, Patrick; Razeghi, Manijeh

    2006-01-01

    GaN nanotubular material is fabricated with an aluminium oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminium oxide membrane with ordered nanoholes is used as a template. Gallium nitride is deposited at the inner wall of the nanoholes in the aluminium oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis conditions in MOCVD are obtained successfully for the gallium nitride nanotubular material in this research. The diameter of the GaN nanotube fabricated is approximately 200-250 nm and the wall thickness is about 40-50 nm. GaN nanotubular material consists of numerous fine GaN particulates with size range 15-30 nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that the grains in GaN nanotubular material have a nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in an aluminium oxide template.

  20. Air-bridged lateral epitaxial overgrowth of GaN thin films

    NASA Astrophysics Data System (ADS)

    Kidoguchi, Isao; Ishibashi, Akihiko; Sugahara, Gaku; Ban, Yuzaburoh

    2000-06-01

    A promising technique of selective lateral epitaxy, namely air-bridged lateral epitaxial overgrowth, is demonstrated in order to reduce the wing tilt as well as the threading dislocation density in GaN thin films. A seed GaN layer was etched to make ridge-stripe along <11¯00>GaN direction and a GaN material was regrown from the exposed (0001) top facet of the ridged GaN seed structures, whose sidewalls and etched bottoms were covered with silicon nitride mask, using low-pressure metalorganic vapor phase epitaxy. The density of dislocations in the wing region was reduced to be <107cm-2, which was at least two orders of magnitude lower than that of underlying GaN. The magnitude of the wing tilt was determined to be 0.08° by x-ray diffraction (XRD) measurements, which was smaller than other lateral epitaxial overgrown GaN thin films. The full width at half maximum of XRD for the wing region was 138 arc sec, indicating high uniformity of c-axis orientation.

  1. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

    NASA Astrophysics Data System (ADS)

    Zhong, Guohua; Zhang, Kang; He, Fan; Ma, Xuhang; Lu, Lanlan; Liu, Zhuang; Yang, Chunlei

    2012-09-01

    Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

  2. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients

    NASA Astrophysics Data System (ADS)

    Ariff, A.; Zainal, N.; Hassan, Z.

    2016-09-01

    This paper describes effects of using post-annealing treatment in different conditions on the properties of polycrystalline GaN layer grown on m-plane sapphire substrate by electron beam (e-beam) evaporator. Without annealing, GaN surface was found to have a low RMS roughness with agglomeration of GaN grains in a specific direction and the sample consisted of gallium oxide (Ga2O3) material. When the post-annealing treatment was carried out in N2 ambient at 650 °C, initial re-crystallization of the GaN grains was observed while the evidence of Ga2O3 almost disappeared. As the NH3 annealing was conducted at 950 °C, more effect of re-crystallization occurred but with less grains coalescence. Three dominant XRD peaks of GaN in (10 1 bar 0) , (0002) and (10 1 bar 1) orientations were evident. Near band edge (NBE) related emission in GaN was also observed. The significant improvement was attributed to simultaneous recrystallization and effective reduction of N deficiency density. The post-annealing in a mixture of N2 and NH3 ambient at 950 °C was also conducted, but has limited the effectiveness of the N atoms to incorporate on the GaN layer due to 'clouding' effect by the inert N2 gas. Further increase in the annealing temperature at 980 °C and 1100 °C, respectively caused severe deteriorations of the structural and optical properties of the GaN layer. Overall, this work demonstrated initial potential in improving polycrystalline GaN material in simple and inexpensive manner.

  3. Growth of GaN nanotubes and nanowires

    NASA Astrophysics Data System (ADS)

    He, Maoqi; Zhou, Piezhen; Mohammad, S. Noor; Halpern, Joshua; Jacobs, Randy; Sarney, Wendy; Salamanca-Riba, Lourdes

    2001-03-01

    We have grown GaN nanowires and nanotubes by direct reaction of Ga metal vapor with NH3 in a simple tube furnace. By varying the ammonia flow rate (20-120 sccm) and temperature (800-1000 ^oC) we have been able to control onset of growth, and the diameters of these cylindrically symmetric nanostructures. The length of the nanowires and nanotubes is determined by the duration of the growth cycle. The nanowires and nanotubes that we have studied are single crystal and have a wurtzite structure. In the first 90 minutes, a 1 or 2 μ thick amorphous GaN matrix is deposited. Soon after pebble like polycrystalline hillocks form. Single crystal nanowires sprout from the sides of the platelets. The diameter of the nanowire is the same as the thickness of the plate, that is the smallest dimension of the face from which it grows. Since the platelet thickness depends on temperature and the ammonia, the thickness of the nanowires is proportional to the temperature and ammonia flow rate. At higher temperatures and flow rates nanotubes and rods start to grow from the flat surface of the plates

  4. Magneto-ballistic transport in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Santoruvo, Giovanni; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison

    2016-09-01

    The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ˜25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

  5. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  6. Europium doping of zincblende GaN by ion implantation

    SciTech Connect

    Lorenz, K.; Franco, N.; Darakchieva, V.; Alves, E.; Roqan, I. S.; O'Donnell, K. P.; Trager-Cowan, C.; Martin, R. W.; As, D. J.; Panfilova, M.

    2009-06-01

    Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the (111) planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the <110> direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.

  7. ODENDOR of Defects in GaN Epitaxial Layers

    NASA Astrophysics Data System (ADS)

    Glaser, E. R.; Kennedy, T. A.; Carlos, W. E.; Freitas, J. A., Jr.; Wickenden, A. E.; Koleske, D. D.

    1998-03-01

    Optically-detected electron-nuclear double resonance (ODENDOR) at 24 GHz has been performed on a set of GaN epitaxial layers (undoped and Si-doped) grown on Al_2O3 to identify and locate residual defects and dopants.(E.R. Glaser et al., submitted to Phys. Rev. B) The first observation was made by the Paderborn group.(F.K. Koschnick et al., Phys. Rev. B 54, R11042 (1996).) Strong ODENDOR with resolved quadrupole structure was observed between 6 and 14 MHz on the g = 1.951 effective-mass (EM) donor resonance found on the 2.2 eV emission bands from two high-resistivity films (n <= 1x10^16 cm-3). The lines are assigned to ^69,71Ga lattice nuclei coupled to the residual donors through a weak hyperfine interaction (<= 1 MHz). The quadrupole splitting of ~ 2.3 MHz found for ^69Ga varies between samples and in comparison to published values for strain-free GaN by 15-25 %. The symmetry of the electric field gradient provides evidence that the donors are located in the crystallites rather than near grain boundaries. ODENDOR was not found between 1.5 and 140 MHz on the g = 1.991 deep defect resonances. Possible reasons for the absence of signals will be discussed.

  8. Atomic layer deposition of GaN at low temperatures

    SciTech Connect

    Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi

    2012-01-15

    The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

  9. A GaN photonic crystal membrane laser.

    PubMed

    Lin, Cheng-Hung; Wang, Jyh-Yang; Chen, Cheng-Yen; Shen, Kun-Ching; Yeh, Dong-Ming; Kiang, Yean-Woei; Yang, C C

    2011-01-14

    The implementation of a series of optically pumped GaN photonic crystal (PhC) membrane lasers is demonstrated at room temperature. The photonic crystal is composed of a scalene-triangular arrangement of circular holes in GaN. Three defect structures are fabricated for comparing their lasing characteristics with those of perfect PhC. It is observed that all the lasing defect modes have lasing wavelengths very close to the band-edge modes in the perfect PhC structure. Although those lasing modes, including band-edge and defect modes, have different optical pump thresholds, different lasing spectral widths, different quality factors (Q factors), and different polarization ratios, all their polarization distributions show maxima in the directions around one of the hole arrangement axes. The similar lasing characteristics between the band-edge and defect modes are attributed to the existence of extremely narrow partial band gaps for forming the defect modes. Also, the oriented polarization properties are due to the scalene-triangle PhC structure. In one of the defect lasing modes, the lasing threshold is as low as 0.82 mJ cm(-2), the cavity Q factor is as large as 1743, and the polarization ratio is as large as 25.4. Such output parameters represent generally superior lasing behaviors when compared with previously reported implementations of similar laser structures.

  10. Nearly stress-free substrates for GaN homoepitaxy

    NASA Astrophysics Data System (ADS)

    Hermann, M.; Gogova, D.; Siche, D.; Schmidbauer, M.; Monemar, B.; Stutzmann, M.; Eickhoff, M.

    2006-08-01

    High-quality 300 μm thick GaN crack-free layers grown by hydride vapor phase epitaxy (HVPE) on c-plane sapphire without buffer layers and separated from the substrate by laser lift-off were investigated by high resolution X-ray diffraction (XRD), low-temperature photoluminescence and cathodoluminescence. All these characterization techniques confirm the high structural quality of the resulting material. Lateral X-ray mapping of the free-standing bulk-like GaN shows a homogeneous compressive stress of less than 40 MPa and a heterogeneous stress of about 80 MPa. The formation of twin grains (domains) were observed both in the reciprocal space mapping of the (2 0 .5) reflection and in rocking curve measurements. The latter ones revealed an estimated lateral coherence length of about 1.2 μm. The crystallite size along the c-axis is estimated to be larger than 20 μm. An upper limit of the density of dislocations with a component of the Burgers vector along the c-axis (screw and mixed type) of 1.3×10 7 cm -2 was extracted from the XRD data, while transmission electron microscopy measurements revealed a dislocation density of 1.7×10 7 cm -2. Thus, these layers are suitable as lattice-parameter and thermal-expansion matched substrates for strain-free homoepitaxy of GaN-based device heterostructures.

  11. Excitation mechanisms of Er optical centers GaN epilayers

    NASA Astrophysics Data System (ADS)

    Hawkins, Matthew; Jiang, Hongxing; Lin, Jingyu; Zavada, John; Vinh, Nguyen

    We report direct evidence of two mechanisms responsible for the excitation of optically active Er3 + ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er optical centers. However, these centers have different photoluminescence spectra, local defect environments, decay dynamics, and excitation cross sections. The photoluminescence at 1.54 micrometer from the isolated Er optical center which can be excited by either mechanism has the same decay dynamics, but possesses a much higher excitation cross-section under band-to-band excitation. In contrast, the photoluminescence at 1.54 micrometer from the defect-related Er optical center can only be observed through band-to-band excitation but has the largest excitation cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate approaches for realization of optical amplification, and possibly lasing, at room temperature.

  12. Research on quantum efficiency of GaN wire photocathode

    NASA Astrophysics Data System (ADS)

    Xia, Sihao; Liu, Lei; Diao, Yu; Kong, Yike

    2017-02-01

    On the basis of three-dimensional continuity equation in semiconductors and finite difference method, the carrier concentration and the quantum efficiency of GaN wire photocathode as a function of incident photon energy are achieved. Results show that the quantum efficiency of the wire photocathode is largely enhanced compared with the conventional planar photocathode. The superiority of the wire photocathode is reflected in its structure with surrounding surfaces. The quantum efficiency of the wire photocathode largely depends on the wire width, surface reflectivity, surface escape probability and incident angle of light. The back interface recombination rate, however, has little influences on the quantum efficiency of the wire photocathode. The simulation results suggest that the optimal width for photoemission is 150-200 nm. Besides, the quantum efficiency increases and decreases linearly with increasing surface escape probability and surface reflectivity, respectively. With increasing ratio of wire spacing to wire height, the optimal incident angle of light is reduced. These simulations are expected to guide the preparation of a better performing GaN wire photocathode.

  13. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

    SciTech Connect

    Kushvaha, S. S.; Kumar, M. Senthil; Maurya, K. K.; Dalai, M. K.; Sharma, Nita D.

    2013-09-15

    Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002) plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  14. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

    NASA Astrophysics Data System (ADS)

    Kushvaha, S. S.; Kumar, M. Senthil; Maurya, K. K.; Dalai, M. K.; Sharma, Nita D.

    2013-09-01

    Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500-750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002) plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  15. Size dependence of melting of GaN nanowires with triangular cross sections

    SciTech Connect

    Wang, Zhiguo; Zu, Xiaotao; Gao, Fei; Weber, William J.

    2007-02-15

    Molecular dynamics simulations have been used to study the melting of GaN nanowires with triangular cross-sections. The curve of the potential energy, along with the atomic configuration is used to monitor the phase transition. The thermal stability of GaN nanowires is dependent on the size of the nanowires. The melting temperature of the GaN nanowires increases with the increasing of area cross-section of the nanowires to a saturation value. An interesting result is that of the nanowires start to melt from the edges, then the surface, and extends to the inner regions of nanowires as temperature increases.

  16. Interfacial Structure and Chemistry of GaN on Ge(111)

    NASA Astrophysics Data System (ADS)

    Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

    2013-12-01

    The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5∶4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and free of GeNx. Density functional theory based total energy calculations show that the interface bilayer contains Ge and Ga atoms, with no N atoms. The 5∶4 bilayer at the interface has a lower energy than a direct stacking of GaN on Ge(111) and enables the 5∶4 lattice-matching growth of GaN.

  17. Stress and Defect Control in GaN Using Low Temperature Interlayers

    SciTech Connect

    Akasaki, I.; Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Iwaya, M.; Kashima, T.; Katsuragcawa, M.

    1998-12-04

    In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.

  18. Etching of GaN layers at electrolysis under UV-irradiation

    NASA Astrophysics Data System (ADS)

    Zubenko, T. K.; Puzyk, M. V.; Stozharov, V. M.; Ermakov, I. A.; Kovalev, D. S.; Ivanova, S. A.; Usikov, A. S.; Medvedev, O. S.; Papchenko, B. P.; Kurin, S. Yu; Antipov, A. A.; Chernyakov, A. E.

    2016-08-01

    Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

  19. Subtle familial translocation t(11;22)(q24.2;q13.33) resulting in Jacobsen syndrome and distal trisomy 22q13.3: further details of genotype-phenotype maps.

    PubMed

    Jamsheer, Aleksander; Smyk, Marta; Wierzba, Jolanta; Kołowska, Jolanta; Woźniak, Anna; Skołozdrzy, Joanna; Fischer, Maria; Latos-Bieleńska, Anna

    2008-01-01

    We report on 3 kindred patients with terminal 11q monosomy and distal 22q trisomy involving the SHANK3 gene, resulting from a subtle familial translocation t(11;22)(q24.2;q13.33). The patients presented with the characteristic symptoms of Jacobsen syndrome (JBS), including: mental retardation, short stature, and craniofacial dysmorphism in all 3 cases; cardiac defects in 2 cases; and thrombocytopenia, brain abnormality, eye coloboma, recurrent infections, cryptorchidism and toe anomalies in single cases. The oldest patient also had Hashimoto disease and diabetes mellitus type 2. So far, these 2 conditions have not been reported in adult patients with JBS. Features typical for distal 22q trisomy in our patients include muscular hypotonia and prenatal failure to thrive, seen in 2 and 1 cases, respectively. We also present a family member with 11q24.2-qter trisomy and 22q13.33-qter monosomy, whose clinical phenotype is partially overlapping with several dysmorphic features of JBS. In addition, multiple pregnancy losses and infantile deaths occurred in this family, suggesting that these chromosomal imbalances may produce a lethal phenotype. FISH with a panel of BAC probes determined the accurate sizes of the deletion 11q (9.9 Mb) and trisomy 22q (0.8 Mb). To date, only 5 cases of submicroscopic 22q13.3-qter trisomy have been reported. A detailed clinical description of our patients, along with a precise cytogenetic designation of chromosomal breakpoints, allow further refinement of genotype-phenotype correlation for distal imbalances in 11q and 22q.

  20. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

    PubMed

    Kowsz, Stacy J; Young, Erin C; Yonkee, Benjamin P; Pynn, Christopher D; Farrell, Robert M; Speck, James S; DenBaars, Steven P; Nakamura, Shuji

    2017-02-20

    We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

  1. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

    PubMed Central

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-01-01

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

  2. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  3. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

    NASA Astrophysics Data System (ADS)

    Lekhal, Kaddour; Bae, Si-Young; Lee, Ho-Jun; Mitsunari, Tadashi; Tamura, Akira; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-08-01

    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology. In particular, for an optimized mixed-carrier gas ratio of H2 to N2, we achieved vertically well-aligned microrods. The topmost regions of the GaN microrods were terminated with pyramidal facets, indicating typical Ga polarity. The optical properties of the grown microrods were characterized by cathodoluminescence (CL) at a low temperature. This revealed that the GaN microrods had high crystal quality since they exhibited suppressed yellow luminescence as well as strong band edge emission.

  4. Effects of Al additives on growth of GaN polycrystals by the Na flux method

    NASA Astrophysics Data System (ADS)

    Imabayashi, Hiroki; Murakami, Kosuke; Matsuo, Daisuke; Honjo, Masatomo; Imanishi, Masayuki; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2017-03-01

    In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation and purity of GaN polycrystals. The yields of GaN crystals grown in Al-added Na flux were dramatically increased from those in Al-free Na flux, and the polycrystals grown by the Al-added Na flux method were highly transparent. As observed in secondary ion mass spectroscopy measurements, the Al content of the polycrystals was below the detection limit of 3 × 1016 atoms/cm3. From these results, the Al-added Na flux method is found to be appropriate for fabricating a large amount of GaN polycrystals without deteriorating the crystal quality.

  5. Thermal Conductivity and Large Isotope Effect in GaN from First Principles

    SciTech Connect

    Lindsay, L.; Broido, D. A.; Reinecke, T. L.

    2012-08-28

    We present atomistic first principles results for the lattice thermal conductivity of GaN and compare them to those for GaP, GaAs, and GaSb. In GaN we find a large increase to the thermal conductivity with isotopic enrichment, ~65% at room temperature. We show that both the high thermal conductivity and its enhancement with isotopic enrichment in GaN arise from the weak coupling of heat-carrying acoustic phonons with optic phonons. This weak scattering results from stiff atomic bonds and the large Ga to N mass ratio, which give phonons high frequencies and also a pronounced energy gap between acoustic and optic phonons compared to other materials. Rigorous understanding of these features in GaN gives important insights into the interplay between intrinsic phonon-phonon scattering and isotopic scattering in a range of materials.

  6. Depth dependence of defect density and stress in GaN grown on SiC

    SciTech Connect

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-15

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29 to 30 {mu}m. High level of residual elastic strain was found in thin (0.29 to 0.73 {mu}m thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2x10{sup 7} cm{sup -2}, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  7. Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

    SciTech Connect

    Lefebvre, P.; Fernandez-Garrido, S.; Grandal, J.; Ristic, J.; Sanchez-Garcia, M.-A.; Calleja, E.

    2011-02-21

    Low-temperature photoluminescence is studied in detail in GaN nanocolumns (NCs) grown by plasma-assisted molecular beam epitaxy under various conditions (substrate temperature and impinging Ga/N flux ratio). The relative intensities of the different emission lines, in particular those related to structural defects, appear to be correlated with the growth conditions, and clearly linked to the NC sample morphology. We demonstrate, in particular, that all lines comprised between 3.10 and 3.42 eV rapidly lose intensity when the growth conditions are such that the NC coalescence is reduced. The well-known line around 3.45 eV, characteristic of GaN NC samples, shows, however, a behavior that is exactly the opposite of the other lines, namely, for growth conditions leading to reduced NC coalescence, this line tends to become more prominent, thus proving to be intrinsic to individual GaN NCs.

  8. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    NASA Astrophysics Data System (ADS)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-03-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer.

  9. Surface potential barrier in m-plane GaN studied by contactless electroreflectance

    NASA Astrophysics Data System (ADS)

    Janicki, Lukasz; Misiewicz, Jan; Cywiński, Grzegorz; Sawicka, Marta; Skierbiszewski, Czeslaw; Kudrawiec, Robert

    2016-02-01

    Contactless electroreflectance (CER) is used to study the surface potential barrier in m-plane GaN UN+ [GaN (d = 20,30,50,70 nm)/GaN:Si] structures grown by using molecular beam epitaxy. Clear bandgap-related transitions followed by Franz-Keldysh oscillations (FKO) have been observed in the CER spectra of all samples at room temperature. The built-in electric fields in the undoped cap layers have been determined from the FKO period. From the built-in electric field and the undoped GaN layer thickness, the Fermi level location at the air-exposed m-plane GaN surface has been estimated as 0.42 ± 0.05 eV below the conduction band.

  10. Thermal conductivity and large isotope effect in GaN from first principles.

    PubMed

    Lindsay, L; Broido, D A; Reinecke, T L

    2012-08-31

    We present atomistic first principles results for the lattice thermal conductivity of GaN and compare them to those for GaP, GaAs, and GaSb. In GaN we find a large increase to the thermal conductivity with isotopic enrichment, ~65% at room temperature. We show that both the high thermal conductivity and its enhancement with isotopic enrichment in GaN arise from the weak coupling of heat-carrying acoustic phonons with optic phonons. This weak scattering results from stiff atomic bonds and the large Ga to N mass ratio, which give phonons high frequencies and also a pronounced energy gap between acoustic and optic phonons compared to other materials. Rigorous understanding of these features in GaN gives important insights into the interplay between intrinsic phonon-phonon scattering and isotopic scattering in a range of materials.

  11. Boron doped GaN and InN: Potential candidates for spintronics

    NASA Astrophysics Data System (ADS)

    Fan, S. W.; Huang, X. N.; Yao, K. L.

    2017-02-01

    The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting nitrogen (BN defects) could induce the GaN and InN to be half-metallic ferromagnets. The magnetic moments mainly come from the BN defects, and each BN defect would produce the 2.00 μB total magnetic moment. The electronic structures indicate the carriers-mediated double exchange interaction plays a crucial role in forming the ferromagnetism. Positive chemical pair interactions imply the BN defects would form the homogeneous distribution in GaN and InN matrix. Moderate formation energies suggest that GaN and InN with BN defects could be fabricated experimentally.

  12. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    SciTech Connect

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-02-10

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

  13. High-resistance GaN epilayers with low dislocation density via growth mode modification

    NASA Astrophysics Data System (ADS)

    Xu, Z. Y.; Xu, F. J.; Wang, J. M.; Lu, L.; Yang, Z. J.; Wang, X. Q.; Shen, B.

    2016-09-01

    High-resistance GaN with low dislocation density adopting growth mode modification has been investigated by metalorganic chemical vapor deposition. The sheet resistance of the order of 1016 Ω/sq has been achieved at room temperature by diminishing the oxygen impurity level close to the substrate with an AlN blocking layer. Attributed to this method which offers more freedom to tailor the growth mode, a three-dimensional (3D) growth process is introduced by adjusting the growth pressure and temperature at the initial stage of the GaN epitaxy to improve the crystalline quality. The large 3D GaN grains formed during this period roughen the surface, and the following coalescence of the GaN grains causes threading dislocations bending, which finally remarkably reduces the dislocation density.

  14. Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy Converter

    DTIC Science & Technology

    2016-06-01

    ARL-TR-7675 ● JUNE 2016 US Army Research Laboratory Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy ...Laboratory Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy Converter by Marc S Litz and Johnny A Russo Sensors and Electron...GaN) Betavoltaic Energy Converter 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) William B Ray II, Marc S

  15. Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction (Preprint)

    DTIC Science & Technology

    2006-07-01

    AFRL-ML-WP-TP-2007-414 LINEARITY AND EFFICIENCY PERFORMANCE OF GaN HEMTs WITH DIGITAL PRE-DISTORTION CORRECTION (PREPRINT) M.J. Poulton, W.K...EFFICIENCY PERFORMANCE OF GaN HEMTs WITH DIGITAL PRE-DISTORTION CORRECTION (PREPRINT) 5c. PROGRAM ELEMENT NUMBER 62102F 5d. PROJECT NUMBER 4348...device performance using Digital Pre-Distortion (DPD) correction. Additionally, both drain voltage and current were optimized to provide high

  16. 10kW TWT Transition to GaN IRE

    DTIC Science & Technology

    2015-03-31

    replacement for the TWT. Phase I covered by this IRE, was to do market research on commercially available GaN transistors as a substitute for traveling wave...Phase I covered by this IRE, was to do market research on commercially available GaN transistors as a substitute for traveling wave tubes in high... Market Research Findings ........................................................................................ 8 3.1.2. Design Approach

  17. Strain dependent electron spin dynamics in bulk cubic GaN

    SciTech Connect

    Schaefer, A.; Buß, J. H.; Hägele, D.; Rudolph, J.; Schupp, T.; Zado, A.; As, D. J.

    2015-03-07

    The electron spin dynamics under variable uniaxial strain is investigated in bulk cubic GaN by time-resolved magneto-optical Kerr-rotation spectroscopy. Spin relaxation is found to be approximately independent of the applied strain, in complete agreement with estimates for Dyakonov-Perel spin relaxation. Our findings clearly exclude strain-induced relaxation as an effective mechanism for spin relaxation in cubic GaN.

  18. GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

    SciTech Connect

    Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Hunter, J.; Tsong, I.

    1998-10-14

    The evolution of stress in gallium nitride films on sapphire has been measured in real- time during metal organic chemical vapor deposition. In spite of the 161%0 compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050"C. Furthermore, in-situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling.

  19. Mass transport, faceting and behavior of dislocations in GaN

    SciTech Connect

    Nitta, S.; Kashima, T.; Kariya, M.; Yukawa, Y.; Yamaguchi, S.; Amano, H.; Akasaki, I.

    2000-07-01

    The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

  20. Gadolinium-Based GaN for Neutron Detection with Gamma Discrimination

    DTIC Science & Technology

    2016-06-01

    diodes since the proposed neutron convertor is Gd, which emits fast electrons upon neutron capture. Diode N7 appeared to show a good response to a 14C...research. Workable GaN Schottky diode radiation detectors were successfully fabricated and tested. The first year has, however, seen a significant effort...Epitaxy (HVPE) grown GaN substrate (Kyma technology [3]) was employed and the sandwich structure Schottky diode was fabricated, on which both alpha and

  1. Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

    SciTech Connect

    Fang, Z.-Q.; Look, D.C.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Molnar, R.J.

    2001-04-18

    Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

  2. Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals.

    PubMed

    Buckeridge, J; Catlow, C R A; Scanlon, D O; Keal, T W; Sherwood, P; Miskufova, M; Walsh, A; Woodley, S M; Sokol, A A

    2015-01-09

    We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

  3. Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au /GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Xu, S. J.; Shi, S. L.; Beling, C. D.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, X. M.

    2006-10-01

    Under identical preparation conditions, Au /GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers.

  4. Carbon nanotube assisted Lift off of GaN layers on sapphire

    NASA Astrophysics Data System (ADS)

    Long, Hao; Feng, Xiaohui; Wei, Yang; Yu, Tongjun; Fan, Shoushan; Ying, Leiying; Zhang, Baoping

    2017-02-01

    Laser lift off (LLO) was one of the most essential processes in fabrication of vertical GaN-based LEDs. However, traditional laser lift off of GaN on sapphire substrates needed high laser energy threshold, which deteriorated the GaN crystal. In this paper, it was found that inserting carbon nanotube between GaN and sapphire could effectively reduce the laser energy threshold in GaN LLO, from 1.5 J /cm2 of conventional GaN/sapphire to 1.3 J /cm2 of CNT inserted GaN/sapphire. The temperature distributions at the GaN/sapphire interfaces with and without CNTs were simulated by the finite elements calculation under laser irradiation. It was found that, due to the higher laser absorption coefficient of CNT, the CNT played as a powerful heating wire, sending out the thermal outside to elevate the GaN's temperature, and thus reduce the laser threshold for LLO. Raman and photoluminescence measurements indicated that residual stress of GaN membranes was as small as 0.3 GPa by the carbon nanotube assisted LLO. This work not only opens new application of CNTs, but also demonstrates the potential of high performance blue and green LEDs.

  5. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

    SciTech Connect

    Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi; Lee, Gang Seok; Jeon, In-Jun; Ahn, Hyung Soo; Yi, Sam Nyung; Ha, Dong Han

    2015-08-15

    Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

  6. Correlation between macroscopic transport parameters and microscopic electrical properties in GaN

    NASA Astrophysics Data System (ADS)

    Witte, H.; Krtschil, A.; Schrenk, E.; Fluegge, K.; Dadgar, A.; Krost, A.

    2005-02-01

    In GaN layers grown by metal-organic vapor phase epitaxy on sapphire substrates the temperature-dependent Hall (TDH) and photo-Hall-effect (PHE) measurements show essential differences between undoped and Si-doped GaN. In undoped GaN the maximum of the Hall mobility occurs at temperatures near 300K with a low value. In PHE, an illumination introduces an enhancement of the mobility and a decrease of the electron density. In contrast, in Si-doped GaN the maximum Hall mobility is higher by a factor of 10 and is observed at temperatures between 100 and 180K. The photoinduced changes in the mobility and electron density are only marginal. Intensity dependent PHE measurements suggest the existence of internal potential barriers caused by inhomogeneities in the undoped samples. These results are combined with the surface-potential roughness on a microscale, as determined by scanning surface-potential microscopy (SSPM). In SSPM the undoped layers show strong potential fluctuations while they are lower for the Si-doped GaN samples. A correlation among the rms roughness of the surface potential, the maximum Hall mobility in TDH, and the maximum changes of the photo-Hall mobility is observed. In undoped GaN the mobility seems to be determined by the scattering at inner potential barriers stemming from structural inhomogeneities.

  7. Strain-induced step bunching in orientation-controlled GaN on Si

    NASA Astrophysics Data System (ADS)

    Narita, Tetsuo; Iguchi, Hiroko; Horibuchi, Kayo; Otake, Nobuyuki; Hoshi, Shinichi; Tomita, Kazuyoshi

    2016-05-01

    We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390‧‧ and 550‧‧ for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si.

  8. Size dictated thermal conductivity of GaN

    DOE PAGES

    Thomas Edwin Beechem; McDonald, Anthony E.; Fuller, Elliot James; ...

    2016-04-01

    The thermal conductivity on n- and p-type doped gallium nitride (GaN) epilayers having thickness of 3-4 μm was investigated using time domain thermoreflectance (TDTR). Despite possessing carrier concentrations ranging across 3 decades (1015 – 1018 cm–3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends–and their overall reduction relative to bulk–are explained leveraging established scattering models where it is shown that size effects play a primary role in limiting thermal conductivity for layers even tens of microns thick. GaNmore » device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.« less

  9. Ge doping of GaN beyond the Mott transition

    NASA Astrophysics Data System (ADS)

    Ajay, A.; Schörmann, J.; Jiménez-Rodriguez, M.; Lim, C. B.; Walther, F.; Rohnke, M.; Mouton, I.; Amichi, L.; Bougerol, C.; Den Hertog, M. I.; Eickhoff, M.; Monroy, E.

    2016-11-01

    We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular-beam epitaxy, reaching carrier concentrations of up to 6.7  ×  1020 cm-3 at 300 K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terraces, without trace of pits or cracks, and the mosaicity of the samples has no noticeable dependence on the Ge concentration. The variation of the GaN:Ge band gap with the carrier concentration is consistent with theoretical calculations of the band gap renormalization due to electron-electron and electron-ion interaction, and Burstein-Moss effect.

  10. Influence of dopants on defect formation in GaN

    SciTech Connect

    Liliental-Weber, Z.; Jasinski, J.; Benamara, M.; Grzegory, I.; Porowski, S.; Lampert, D.J.H.; Eiting, C.J.; Dupuis R.D.

    2001-10-15

    Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on c-plane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN:Be crystals.

  11. Electron spin dynamics in cubic GaN

    NASA Astrophysics Data System (ADS)

    Buß, J. H.; Schupp, T.; As, D. J.; Brandt, O.; Hägele, D.; Rudolph, J.

    2016-12-01

    The electron spin dynamics in cubic GaN is comprehensively investigated by time-resolved magneto-optical Kerr-rotation spectroscopy over a wide range of temperatures, magnetic fields, and doping densities. The spin dynamics is found to be governed by the interplay of spin relaxation of localized electrons and Dyakonov-Perel relaxation of delocalized electrons. Localized electrons significantly contribute to spin relaxation up to room temperature at moderate doping levels, while Dyakonov-Perel relaxation dominates for high temperatures or degenerate doping levels. Quantitative agreement to Dyakonov-Perel theory requires a larger value of the spin-splitting constant than theoretically predicted. Possible reasons for this discrepancy are discussed, including the role of charged dislocations.

  12. Dislocation generation in GaN by dicing process

    NASA Astrophysics Data System (ADS)

    Taguchi, Hideyuki; Kitahara, Amane; Miyake, Syugo; Nakaue, Akimitu; Nishikawa, Atsushi; Fujiwara, Yasufumi

    2013-03-01

    In order to analyze effect of the dicing process on the GaN epitaxial layer, the GaN-wafer is cut in sizes of the 0.7 mm square and the 1.7 mm square. The crystal characteristics of the GaN-chips have been measured using X-ray measurements and Raman spectra measurements. The full-width half maximum (FWHM) values of the X-ray rocking curves of (0002), (10-13) and (10-12) of the 0.7 mm square GaN-chip become wider than that of before the dicing process. The E2 (high) peak of Raman spectra at the edge in the 0.7mm square GaN-chip is shifted to lower wave number. In consideration of crystallography, we infer from these results that both the crystal strains and the screw dislocations have been generated during the dicing process.

  13. Intrinsic polarization control in rectangular GaN nanowire lasers

    DOE PAGES

    Li, Changyi; Liu, Sheng; Luk, Ting S.; ...

    2016-02-01

    In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control overmore » the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.« less

  14. Intrinsic polarization control in rectangular GaN nanowire lasers

    SciTech Connect

    Li, Changyi; Liu, Sheng; Luk, Ting S.; Figiel, Jeffrey J.; Brener, Igal; Brueck, S. R. J.; Wang, George T.

    2016-02-01

    In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.

  15. Spontaneous emission enhancement in micropatterned GaN

    NASA Astrophysics Data System (ADS)

    Niehus, M.; Sanguino, P.; Monteiro, T.; Soares, M. J.; Schwarz, R.

    2004-10-01

    With two interfering pulses from the fourth harmonic of a Nd-YAG laser we burnt a periodic lattice structure into the surface of GaN thin films. The lattice period of this permanent grating could be controlled between less than one and several tens of microns. Above the decomposition threshold, nitrogen evades from the sample surface, and the residual metallic gallium accumulates in the form of tiny droplets at the surfaces. The patterned structure shows structural similarities with microcavities. The question arises if the residual metallic gallium may act as a partially reflecting mirror. To test this hypothesis, we studied the steady-state and transient photoluminescence through the modulation of light emerging from the ubiquitous broad "yellow" photoluminescence band. The microlattice is evidenced by energy-equidistant spontaneous emission enhancement peaks in the steady-state photoluminescence spectra. We suggest that the partial reflection due to the residual metallic gallium leads to the observed enhancement effect.

  16. Microstructure of laterally overgrown GaN layers

    SciTech Connect

    Liliental-Weber, Zuzanna; Cherns, David

    2001-04-03

    Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.

  17. GaN Based Electronics And Their Applications

    NASA Astrophysics Data System (ADS)

    Ren, Fan

    2002-03-01

    The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

  18. Zn-dopant dependent defect evolution in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

    2015-10-01

    Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a

  19. High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Koblmueller, G.; Wu, F.; Mates, T.; Speck, J. S.; Fernandez-Garrido, S.; Calleja, E.

    2007-11-26

    An alternative approach is presented for the plasma-assisted molecular beam epitaxy of high-quality GaN. Under N-rich growth conditions, an unexpected layer-by-layer growth mode was found for a wide range of growth temperatures in the GaN thermal decomposition regime (>750 deg. C). Consequently, superior surface morphologies with roughness of less than 1 nm (rms) have been achieved. For lightly Si-doped GaN films, room-temperature electron mobilities exceeding 1100 cm{sup 2}/V s were measured, surpassing the commonly insulating nature of GaN grown under N-rich conditions at low temperature.

  20. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

    SciTech Connect

    Fernandez-Garrido, S.; Grandal, J.; Calleja, E.; Sanchez-Garcia, M. A.; Lopez-Romero, D.

    2009-12-15

    The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (730-850 deg. C). Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth.

  1. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

    NASA Astrophysics Data System (ADS)

    Hubbard, S. M.; Zhao, G.; Pavlidis, D.; Sutton, W.; Cho, E.

    2005-11-01

    High-resistance (HR) GaN templates for AlGaN/GaN heterojunction field effect transistor (HFET) applications were grown using organometallic vapor phase epitaxy. The GaN sheet resistance was tuned using final nucleation layer (NL) annealing temperature and NL thickness. Using an annealing temperature of 1033 °C and NL thickness of 26 nm, GaN with sheet resistance of 10 10 Ω/sq was achieved, comparable to that of Fe-doped GaN. Material characterization results show that the high-resistance GaN is achieved due to compensating acceptor levels that may be introduced through edge-type threading dislocations. Optimization of annealing temperature and NL thickness provided a means to maximize GaN sheet resistance without significantly degrading material quality. In situ laser reflectance was used to correlate the NL properties to sheet resistance and material quality, providing a figure of merit for expected sheet resistance. AlGaN/GaN HFET layers grown using HR GaN templates with R of 10 10 Ω/sq gave surface and interface roughness of 14 and 7 Å, respectively. The 2DEG Hall mobility and sheet charge of HFETs grown using HR GaN templates was comparable to similar layers grown using unintentionally doped (UID) GaN templates.

  2. Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer

    SciTech Connect

    Lim, K.Y.; Lee, K.J.; Park, C.I.; Kim, K.C.; Choi, S.C.; Lee, W.H.; Suh, E.K.; Yang, G.M.; Nahm, K.S.

    2000-07-01

    GaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH{sub 4} gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH{sub 3}. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

  3. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    SciTech Connect

    McSkimming, Brian M. Speck, James S.; Chaix, Catherine

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  4. Piezo-generator integrating a vertical array of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Jamond, N.; Chrétien, P.; Houzé, F.; Lu, L.; Largeau, L.; Maugain, O.; Travers, L.; Harmand, J. C.; Glas, F.; Lefeuvre, E.; Tchernycheva, M.; Gogneau, N.

    2016-08-01

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ˜12.7 mW cm-3. This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  5. Piezo-generator integrating a vertical array of GaN nanowires.

    PubMed

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  6. Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

    NASA Astrophysics Data System (ADS)

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Yang, P.; Tan, H. R.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-12-01

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the {111} facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si{111} growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (IYL/INBE) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E2(high) optical phonon mode at 565.224 ± 0.001 cm-1 with a narrow full width at half maximum of 1.526 ± 0.002 cm-1 was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si{111} surface etched on Si(100).

  7. Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

    SciTech Connect

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Tan, H. R.; Yang, P.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-12-28

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)

  8. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  9. Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer

    NASA Astrophysics Data System (ADS)

    Sato, Tadashige; Okano, Shinya; Goto, Takenari; Yao, Takafumi; Seto, Ritsu; Sato, Akira; Goto, Hideki

    2013-08-01

    A free-standing GaN wafer was fabricated by depositing a GaN buffer that induced the formation of pits (hereafter, pit-inducing GaN buffer) on a low-temperature-grown GaN buffer on the sapphire substrate. A high-temperature-grown GaN layer was grown on the pit-inducing GaN buffer that induced the formation of pits on the high-temperature-grown GaN layer. The pit-inducing buffer suppresses crack formation in the thick GaN film thereby releasing growth stress. Thermal stress in GaN on a sapphire system is also discussed on the basis of calculations utilizing a bilayer model. We have succeeded in the fabrication of a nearly 4-in.-diameter free-standing GaN thick wafer with a pit-inducing GaN buffer by one-stop hydride vapor phase epitaxy, which will lead to a low-cost fabrication of free-standing GaN wafers.

  10. GaN Microwave DC-DC Converters

    NASA Astrophysics Data System (ADS)

    Ramos Franco, Ignacio

    Increasing the operating frequency of switching converters can have a direct impact in the miniaturization and integration of power converters. The size of energy-storage passive components and the difficulty to integrate them with the rest of the circuitry is a major challenge in the development of a fully integrated power supply on a chip. The work presented in this thesis attempts to address some of the difficulties encountered in the design of high-frequency converters by applying concepts and techniques usually used in the design of high-efficiency power amplifiers and high-efficiency rectifiers at microwave frequencies. The main focus is in the analysis, design, and characterization of dc-dc converters operating at microwave frequencies in the low gigahertz range. The concept of PA-rectifier duality, where a high-efficiency power amplifier operates as a high-efficiency rectifier is investigated through non-linear simulations and experimentally validated. Additionally, the concept of a self-synchronous rectifier, where a transistor rectifier operates synchronously without the need of a RF source or driver is demonstrated. A theoretical analysis of a class-E self-synchronous rectifier is presented and validated through non-linear simulations and experiments. Two GaN class-E2 dc-dc converters operating at a switching frequency of 1 and 1.2 GHz are demonstrated. The converters achieve 80 % and 75 % dc-dc efficiency respectively and are among the highest-frequency and highest-efficiency reported in the literature. The application of the concepts established in the analysis of a self-synchronous rectifier to a power amplifier culminated in the development of an oscillating, self-synchronous class-E 2 dc-dc converter. Finally, a proof-of-concept fully integrated GaN MMIC class-E 2 dc-dc converter switching at 4.6 GHz is demonstrated for the first time to the best of our knowledge. The 3.8 mm x 2.6 mm chip contains distributed inductors and does not require any

  11. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  12. Interface Electronic State Characterization of Plasma Enhanced Atomic Layer Deposited Dielectrics on GaN

    NASA Astrophysics Data System (ADS)

    Yang, Jialing

    In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25--220 °C). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O 3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H 2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and

  13. Thermal evolution of microstructure in ion-irradiated GaN

    SciTech Connect

    Bae, In-Tae; Jiang, Weilin; Wang, Chong M.; Weber, William J.; Zhang, Yanwen

    2009-04-20

    The thermal evolution of the microstructure created by irradiation of a GaN single crystal with 2 MeV Au2+ ions at 150 K is characterized following annealing at 973 K using transmission electron microscopy. In the as-irradiated sample characterized at 300 K, Ga nanocrystals with the diamond structure, which is an unstable configuration for Ga, are directly observed together with nitrogen bubbles in the irradiation-induced amorphous layer. Upon thermal annealing, the thickness of the amorphous layer decreases by ~13.1 %, and nano-beam electron diffraction analysis indicates no evidence for residual Ga nanocrystals, but instead reveals a mixture of hexagonal and cubic GaN phases in the annealed sample. Nitrogen molecules, captured in the as-irradiated bubbles, appear to debond and react with the Ga nanocrystals during the thermal annealing to form crystalline GaN. In addition, electron energy loss spectroscopy measurements reveal an atomic volume change of 18.9 % for the as-irradiated amorphous layer relative to the virgin single crystal GaN. This relative swelling of the damaged layer reduces to 7.7 % after thermal annealing. Partial recrystallization and structural relaxation of the GaN amorphous state are believed responsible for the volume change.

  14. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence

    NASA Astrophysics Data System (ADS)

    Sarwar, A. T. M. Golam; May, Brelon J.; Chisholm, Matthew F.; Duscher, Gerd J.; Myers, Roberto C.

    2016-04-01

    By quantum confining GaN at monolayer thickness with AlN barriers inside of a nanowire, deep ultraviolet LEDs are demonstrated. Full three-dimensional strain dependent energy band simulations are carried out within multiple quantum disk (MQD) GaN/AlN nanowire superlattice heterostructures. It is found that, even within the same nanowire MQD, the emission energy of the ultrathin GaN QDs varies from disk to disk due to the changing strain distribution and polarization charge induced energy band bending along the axial nanowire direction. MQD heterostructures are grown by plasma-assisted molecular beam epitaxy to form self-assembled catalyst-free nanowires with 1 to 2 monolayer thick GaN insertions within an AlN matrix. Photoluminescence peaks are observed at 295 nm and 283 nm from the 2 ML and 1 ML thick MQD samples, respectively. Polarization-doped nanowire LEDs are grown incorporating 1 ML thick GaN MQD active regions from which we observe deep ultraviolet electroluminescence. The shortest LED wavelength peak observed is 240 nm and attributed to electron hole recombination within 1 ML thick GaN QDs.

  15. Transport properties, specific heat and thermal conductivity of GaN nanocrystalline ceramic

    SciTech Connect

    Sulkowski, Czeslaw; ChuchmaLa, Andrzej; Zaleski, Andrzej J.; Matusiak, Marcin; Mucha, Jan; GLuchowski, PaweL; Strek, WiesLaw

    2010-10-15

    The structural and transport properties (resistivity, thermopower and Hall effect), specific heat and thermal conductivity have been measured for GaN nanocrystalline ceramic prepared by hot pressing. It was found that the temperature dependence of resistivity in temperature range 10-300 K shows the very low activation energy, which is ascribed to the shallow donor doping originating in amorphous phase of sample. The major charge carriers are electrons, what is indicated by negative sign of Hall constant and Seebeck coefficient. The thermopower attains large values (-58 {mu}V/K at 300 K) and was characterized by linear temperature dependence which suggests the diffusion as a major contribution to Seebeck effect. The high electron concentration of 1.3x10{sup 19} cm{sup -3} and high electronic specific heat coefficient determined to be 2.4 mJ/molK{sup 2} allow to conclude that GaN ceramic demonstrates the semimetallic-like behavior accompanied by very small mobility of electrons ({approx}0.1 cm{sup 2}/V s) which is responsible for its high resistivity. A low heat conductivity of GaN ceramics is associated with partial amorphous phase of GaN grains due to high pressure sintering. - Graphical Abstract: Thermal resistivity and thermopower measurements indicates the high phonon scattering and lack of phonon-drag contribution to thermopower in GaN nanoceramics pressed under 4 GPa at 800 {sup o}C.

  16. Electron spin relaxation in two polymorphic structures of GaN

    NASA Astrophysics Data System (ADS)

    Kang, Nam Lyong

    2015-03-01

    The relaxation process of electron spin in systems of electrons interacting with piezoelectric deformation phonons that are mediated through spin-orbit interactions was interpreted from a microscopic point of view using the formula for the electron spin relaxation times derived by a projection-reduction method. The electron spin relaxation times in two polymorphic structures of GaN were calculated. The piezoelectric material constant for the wurtzite structure obtained by a comparison with a previously reported experimental result was {{P}pe}=1.5 × {{10}29} eV {{m}-1}. The temperature and magnetic field dependence of the relaxation times for both wurtzite and zinc-blende structures were similar, but the relaxation times in zinc-blende GaN were smaller and decreased more rapidly with increasing temperature and magnetic field than that in wurtzite GaN. This study also showed that the electron spin relaxation for wurtzite GaN at low density could be explained by the Elliot-Yafet process but not for zinc-blende GaN in the metallic regime.

  17. Spontaneously grown GaN and AlGaN nanowires

    NASA Astrophysics Data System (ADS)

    Bertness, K. A.; Roshko, A.; Sanford, N. A.; Barker, J. M.; Davydov, A. V.

    2006-01-01

    We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE) that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (1 1 1) substrates. The nanowires were oriented along the GaN c-axis and normal to the substrate surface. Unlike in many other reports of GaN nanowire growth, no metal catalysts were used. Low growth rates at substrate temperatures near 820 °C were combined with high nitrogen flux (partially dissociated with RF plasma excitation) to form well-separated GaN wires with diameters from 50 to 250 nm in diameter and lengths ranging from 2 to 7 μm. The nanowires grew out of an irregular matrix layer containing deep faceted holes. X-ray diffraction indicated that the wires were fully relaxed and aligned to the silicon substrate. The growth morphology was strongly affected by the presence of Al and Be. The changes suggest that surface diffusion is a primary driving force in the growth of GaN nanowires with MBE.

  18. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence

    SciTech Connect

    Chisholm, Matthew F.; Golam Sarwar, A. T. M.; Myers, Roberto C.; Mays, Brelon J.; Duscher, Gerd J.

    2016-03-18

    By quantum confining GaN at monolayer thickness with AlN barriers inside of a nanowire, deep ultraviolet LEDs are demonstrated. Full three-dimensional strain dependent energy band simulations are carried out within multiple quantum disk (MQD) GaN/AlN nanowire superlattice heterostructures. It is found that, even within the same nanowire MQD, the emission energy of the ultrathin GaN QDs varies from disk to disk due to the changing strain distribution and polarization charge induced energy band bending along the axial nanowire direction. MQD heterostructures are grown by plasma-assisted molecular beam epitaxy to form self-assembled catalyst-free nanowires with 1 to 2 monolayer thick GaN insertions within an AlN matrix. Photoluminescence peaks are observed at 295 nm and 283 nm from the 2 ML and 1 ML thick MQD samples, respectively. Polarization-doped nanowire LEDs are grown incorporating 1 ML thick GaN MQD active regions from which we observe deep ultraviolet electroluminescence. As a result, the shortest LED wavelength peak observed is 240 nm and attributed to electron hole recombination within 1 ML thick GaN QDs.

  19. Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology

    NASA Astrophysics Data System (ADS)

    Zhang, Heng; Zhang, Xiong; Wang, Shuchang; Wang, Xiaolei; Zhao, Jianguo; Wu, Zili; Dai, Qian; Yang, Hongquan; Cui, Yiping

    2017-01-01

    A reformed flow-rate-modulation technology was developed for the metalorganic vapor phase epitaxy (MOVPE) growth of the N-polar GaN epitaxial layers. To improve the crystalline quality of the N-polar GaN epitaxial layers, a GaN nucleation layer was grown at relatively low temperature with carefully-controlled pulsed supply of Ga source and showed diverse morphology with atomic force microscope (AFM). Furthermore, the electrical and optical properties of the grown N-polar GaN epitaxial layers were investigated extensively by means of Hall effect, photoluminescence (PL), and X-ray rocking curve (XRC) measurements. The characterization results revealed that as compared with the N-polar GaN epitaxial layer grown over the conventional GaN nucleation layer which was deposited with continuous supply of both N and Ga sources, the electrical and optical properties of the N-polar GaN epitaxial layer grown with optimized supply of Ga source for the GaN nucleation layer were significantly improved.

  20. One-step fabrication of porous GaN crystal membrane and its application in energy storage

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Wang, Shouzhi; Shao, Yongliang; Wu, Yongzhong; Sun, Changlong; Huo, Qin; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

    2017-03-01

    Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application.

  1. One-step fabrication of porous GaN crystal membrane and its application in energy storage

    PubMed Central

    Zhang, Lei; Wang, Shouzhi; Shao, Yongliang; Wu, Yongzhong; Sun, Changlong; Huo, Qin; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

    2017-01-01

    Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application. PMID:28281562

  2. One-step fabrication of porous GaN crystal membrane and its application in energy storage.

    PubMed

    Zhang, Lei; Wang, Shouzhi; Shao, Yongliang; Wu, Yongzhong; Sun, Changlong; Huo, Qin; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

    2017-03-10

    Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application.

  3. A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

    NASA Astrophysics Data System (ADS)

    Li, Zhongda; Chow, T. Paul

    2013-08-01

    We have experimentally demonstrated a new method for modifying the two-dimensional electron density (2DEG) at the AlGaN/GaN interface by etching of the GaN cap layer on top of the AlGaN. GaN MOS capacitors have been fabricated on samples with partially or fully etched GaN cap, and the 2DEG density has been extracted. The results show a linear relation between the 2DEG density and the thickness of the GaN cap being etched. We have also fabricated van der Pauw structures and obtained the 2DEG density using Hall measurements, and the results are consistent with that from the GaN MOS capacitors.

  4. Synthesis of GaN nanowires on gold-coated SiC substrates by novel pulsed electron deposition technique

    NASA Astrophysics Data System (ADS)

    Lei, M.; Yang, H.; Li, P. G.; Tang, W. H.

    2008-01-01

    A two-step approach for macro-synthesis of GaN nanowires was developed in this study. GaN nanoparticles were firstly synthesized through a facile solid-state reaction using an organic reagent dicyandiamide (C 2N 4H 4) and Ga 2O 3 as precursors. Subsequently, single-crystalline wurtzite GaN nanowires were grown on gold-coated 6H-SiC substrates via novel pulsed electron deposition (PED) technique using the as-prepared GaN nanoparticles as target, which provides a new route employing nanoparticles as precursors to fabricate GaN nanowires. It is found that pulsed electron ablation induced Ga and N plasma directly towards the gold-coated substrate to initialize the vapor-liquid-solid (VLS) growth processes. The morphological and structural properties were investigated in detail and Raman scattering spectrum of these nanowires presented some new features.

  5. The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

    NASA Astrophysics Data System (ADS)

    Huang, Y.; Chen, X. D.; Fung, S.; Beling, C. D.; Ling, C. C.; Wei, Z. F.; Xu, S. J.; Zhi, C. Y.

    2004-07-01

    Temperature-dependent Hall (TDH) measurements and confocal micro-Raman spectroscopy have been used to study the free carrier spatial distribution and scattering mechanism in unintentionally doped GaN film grown on the sapphire substrate with the method of metalorganic chemical vapor deposition. Both the TDH data and the depth-profiled Raman spectra agreed with the existence of a nonuniform spatial distribution of free carriers in the GaN film with a highly conductive layer of ˜1 μm thickness near the GaN sapphire boundary. With the consideration of this parallel conduction channel adjacent to GaN sapphire boundary, detailed analysis of the TDH mobility data suggests that a relatively high concentration of nitrogen vacancies exists and nitrogen vacancy scattering has an important influence on limiting the electron mobility in the bulk film of the present GaN sample.

  6. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

    NASA Astrophysics Data System (ADS)

    Oshima, Yuichi; Eri, Takeshi; Shibata, Masatomo; Sunakawa, Haruo; Kobayashi, Kenji; Ichihashi, Toshinari; Usui, Akira

    2003-01-01

    We have developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride vapor phase epitaxy (HVPE) growth of thick GaN layer was performed on a GaN template with a thin TiN film on the top. After the cooling process of the HVPE growth, the thick GaN layer was easily separated from the template by the assistance of many voids generated around the TiN film. As a result, a freestanding GaN wafer was obtained. The wafer obtained had a diameter of 45 mm, and a mirror-like surface. The-full-width-at-half-maximum (FWHM) of (0002) and (10\\bar{1}0) peaks in the X-ray rocking curve profile were 60 and 92 arcsec, respectively. The dislocation density was evaluated at 5× 106 cm-3 by etch pit density measurement.

  7. AMIE Gan Island Ancillary Disdrometer Field Campaign Report

    SciTech Connect

    Oue, Mariko

    2016-04-01

    As part of the U.S. Department of Energy (DOE)’s Atmospheric Radiation Measurement Climate Research Facility (ARM) Madden-Julian Oscillation (MJO) Investigation Experiment (AMIE), in January 2012 a disdrometer observation took place with the second ARM Mobile Facility (AMF2), the Scanning ARM Cloud Radar (SACR), the Texas A&M SMART-R C-band radar, and the National Center for Atmospheric Research (NCAR) dual wavelength S- and Ka-bands polarimetric (SPolKa) radar on Gan Island, Maldives. In order to measure raindrop size distributions, a disdrometer of Nagoya University, Japan, was set up close to the ARM Two-Dimensional (2D) Video Disdrometer (2DVD). The SMART-R and SPolKa radars performed range-height-indicator scanning in the direction of the disdrometer site. Comparing the disdrometer data with 2DVD data, the raindrop size distribution data will be calibrated. Furthermore, the analysis of the raindrop size distribution and radar data will be expected to clarify the microphysics in tropical convective clouds.

  8. Vertical Graphene-base transistor on GaN substrate

    NASA Astrophysics Data System (ADS)

    Zubair, Ahmad; Saadat, Omair; Song, Yi; Kong, Jing; Dresselhaus, Mildred; Palacios, Tomas

    2014-03-01

    The high carrier mobility, saturation velocity and thermal conductivity make graphene an attractive candidate for RF electronics. In addition to conventional lateral transistors, several alternative vertical device structures like hot electron transistors have been demonstrated to be promising for RF applications. The unique combination of sub-nanometer thickness and high conductivity makes graphene an excellent base material for hot electron transistors by lowering the base transit time in these vertical devices. The demonstrated graphene-base hot electron transistor performance is limited by low current density and low common-base current gain. In this work, we fabricated a graphene-base transistor on GaN/AlGaN heterostructure. We studied the tunneling from GaN/AlGaN heterojunction to graphene and compared with other demonstrated vertical graphene-base devices. We also investigated the effect of AlGaN thickness and different filtering barriers on both room temperature and low temperature transport characteristics of the fabricated devices. With careful design and optimization of the structure, graphene-base transistors on GaN substrate can be a potential candidate for future graphene RF electronics.

  9. Radiation Characterization of Commercial GaN Devices

    NASA Technical Reports Server (NTRS)

    Harris, Richard D.; Scheick, Leif Z.; Hoffman, James P.; Thrivikraman, Tushar; Jenabi, Masud; Gim, Yonggyu; Miyahira, Tetsuo

    2011-01-01

    Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

  10. Optical Properties of GaN and ZnO

    NASA Astrophysics Data System (ADS)

    Song, J.-H.

    A brief review on the optical properties of wurtzite ZnO and GaN is presented in this chapter with an emphasis on comparison between the materials. The properties of free excitons and impurity-bound excitons, such as their energetic positions and binding energies, are summarized. The localization energy and the ionization energy of the dominant impurities obtained by emission spectroscopy are also presented. Typical aspects of emissions from donor—acceptor pairs, free-to-bound transition, and deep level recombination are discussed. Several experimental characteristics of the relevant heterostructures, InGaN/GaN and MgZnO/ZnO, are also given below. Basic optical methods characterizing the effects of internal electric fields and carrier-localization are summarized. The unique properties of polarization sensitive emissions from nonpolar films are presented. Based on the valence band structures, the polarization selection rules can be obtained in simpler forms. Some recent reports will also be introduced stating that the anisotropic strain in nonpolar films plays an important role in deciding the polarization selectivity. The results of Raman spectroscopy are summarized in the end, with the emphasis on deciding the residual strain and the carrier concentration.

  11. Low energy electron beam induced vacancy activation in GaN

    SciTech Connect

    Nykaenen, H.; Suihkonen, S.; Sopanen, M.; Kilanski, L.

    2012-03-19

    Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

  12. Low energy electron beam induced vacancy activation in GaN

    NASA Astrophysics Data System (ADS)

    Nykänen, H.; Suihkonen, S.; Kilanski, L.; Sopanen, M.; Tuomisto, F.

    2012-03-01

    Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.

  13. Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Mozharov, A. M.; Komissarenko, F. E.; Vasiliev, A. A.; Bolshakov, A. D.; Moiseev, E. I.; Mukhin, M. S.; Cirlin, G. E.; Mukhin, I. S.

    2016-08-01

    Electrical properties of single GaN nanowires grown by means of molecular beam epitaxy with N-plasma source were studied. Ohmic contacts connected to single n-type GaN wires were produced by the combination of electron beam lithography, metal vacuum evaporation and rapid thermal annealing technique. The optimal annealing temperature to produce ohmic contacts implemented in the form of Ti/Al/Ti/Au stack has been determined. By means of 2-terminal measurement wiring diagram the conductivity of single NW has been obtained for NWs with different growth parameters. The method of MESFET measurement circuit layout of single GaN nanowires (NWs) has been developed. In accordance with performed numerical calculation, free carriers' concentration and mobility of single NWs could be independently estimated using MESFET structure.

  14. Pyramidal defects in Mg-doped GaN in light of strain-energy minimization

    NASA Astrophysics Data System (ADS)

    Lee, Dong Nyung

    2011-12-01

    The planar segregation gives rise to stress and strain fields which are approximated by a uniaxial character in a displacement controlled system. In this condition, the elastic strain energy is proportional to Young's modulus. Young's modulus of GaN is minimized when the directions normal to a conical segregation surface make about 48° with the c-axis of hexagonal GaN, which is close to the angle 47.3° between the c-axis and the directions normal to the {112¯3} planes. This implies that the formation of pyramidal defects in magnesium-doped GaN can be a compromise between minimization of the elastic strain energy due to segregation of magnesium and the planar segregation.

  15. A low cost, green method to synthesize GaN nanowires

    PubMed Central

    Zhao, Jun-Wei; Zhang, Yue-Fei; Li, Yong-He; Su, Chao-hua; Song, Xue-Mei; Yan, Hui; Wang, Ru-Zhi

    2015-01-01

    The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice. PMID:26643613

  16. Lattice-matched HfN buffer layers for epitaxy of GaN on Si

    SciTech Connect

    Armitage, Robert; Yang, Qing; Feick, Henning; Gebauer, Joerg; Weber, Eicke R.; Shinkai, Satoko; Sasaki, Katsutaka

    2002-05-08

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 (mu)m. Initial results for GaN grown on the (111) surface show a photoluminescence peak width of 17 meV at 11 K, and an asymmetric x-ray rocking curve width of 20 arcmin. Wurtzite GaN on HfN/Si(001) shows reduced structural quality and peculiar low-temperature luminescence features. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  17. P-type doping of GaN(000\\bar{1}) by magnesium ion implantation

    NASA Astrophysics Data System (ADS)

    Narita, Tetsuo; Kachi, Tetsu; Kataoka, Keita; Uesugi, Tsutomu

    2017-01-01

    Magnesium ion implantation has been performed on a GaN(000\\bar{1}) substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current-voltage characteristics of p-n diodes fabricated on GaN(000\\bar{1}) showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN(000\\bar{1}).

  18. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  19. Nonresonant tunneling phonon depopulated GaN based terahertz quantum cascade structures

    NASA Astrophysics Data System (ADS)

    Freeman, Will; Karunasiri, Gamani

    2013-04-01

    GaN based terahertz quantum cascade structures are theoretically studied. Since the Fröhlich interaction is ˜15 times higher in GaN than in GaAs, level broadening makes obtaining appreciable optical gain difficult even with a large population inversion. A density matrix Monte Carlo method is used to calculate the broadening of the optical gain spectra as a function of lattice temperature. We find by using a proposed method of nonresonant tunneling and electron-longitudinal-optical phonon scattering for depopulation of the lower lasing state, that it is possible to sufficiently isolate the upper lasing state and control the lower lasing state lifetime to obtain high optical gain in GaN. The results predict lasing out to 300 K which is significantly higher than for GaAs based structures.

  20. Visualization of GaN surface potential using terahertz emission enhanced by local defects

    NASA Astrophysics Data System (ADS)

    Sakai, Yuji; Kawayama, Iwao; Nakanishi, Hidetoshi; Tonouchi, Masayoshi

    2015-09-01

    Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors in energy-efficient power devices. To realize stable and reliable wide-gap semiconductor devices, the basic physical properties, such as the electric properties on the surface and at the interface, should be revealed. Here, we report visualization of terahertz (THz) emission from the surface of GaN, which is excited by ultraviolet femtosecond laser pulses. We found that the THz emission is enhanced by defects related to yellow luminescence, and this phenomenon is explained through the modification of band structures in the surface depletion layer owing to trapped electrons at defect sites. Our results demonstrate that the surface potential in a GaN surface could be detected by laser-induced THz emission. Moreover, this method enables feasible evaluation of the distribution of non-radiative defects, which are undetectable with photoluminescence, and it contributes to the realization normally-off GaN devices.

  1. Visualization of GaN surface potential using terahertz emission enhanced by local defects.

    PubMed

    Sakai, Yuji; Kawayama, Iwao; Nakanishi, Hidetoshi; Tonouchi, Masayoshi

    2015-09-09

    Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors in energy-efficient power devices. To realize stable and reliable wide-gap semiconductor devices, the basic physical properties, such as the electric properties on the surface and at the interface, should be revealed. Here, we report visualization of terahertz (THz) emission from the surface of GaN, which is excited by ultraviolet femtosecond laser pulses. We found that the THz emission is enhanced by defects related to yellow luminescence, and this phenomenon is explained through the modification of band structures in the surface depletion layer owing to trapped electrons at defect sites. Our results demonstrate that the surface potential in a GaN surface could be detected by laser-induced THz emission. Moreover, this method enables feasible evaluation of the distribution of non-radiative defects, which are undetectable with photoluminescence, and it contributes to the realization normally-off GaN devices.

  2. Long-Lived, Coherent Acoustic Phonon Oscillations in GaN Single Crystals

    SciTech Connect

    Wu, S.; Geiser, P.; Jun, J.; Karpinski, J.; Park, J.-R.; Sobolewski, R.

    2006-01-31

    We report on coherent acoustic phonon (CAP) oscillations studied in high-quality bulk GaN single crystals with a two-color femtosecond optical pump-probe technique. Using a far-above-the-band gap ultraviolet excitation (~270 nm wavelength) and a near-infrared probe beam (~810 nm wavelength), the long-lived, CAP transients were observed within a 10 ns time-delay window between the pump and probe pulses, with a dispersionless (proportional to the probe-beam wave vector) frequency of ~45 GHz. The measured CAP attenuation corresponded directly to the absorption of the probe light in bulk GaN, indicating that the actual (intrinsic) phonon-wave attenuation in our crystals was significantly smaller than the measured 65.8 cm^-1 value. The velocity of the phonon propagation was equal to the velocity of sound in GaN.

  3. Measurement of the electrostatic edge effect in wurtzite GaN nanowires

    SciTech Connect

    Henning, Alex; Rosenwaks, Yossi; Klein, Benjamin; Bertness, Kris A.; Blanchard, Paul T.; Sanford, Norman A.

    2014-11-24

    The electrostatic effect of the hexagonal corner on the electronic structure in wurtzite GaN nanowires (NWs) was directly measured using Kelvin probe force microscopy (KPFM). By correlating electrostatic simulations with the measured potential difference between the nanowire face and the hexagonal vertices, the surface state concentration and band bending of GaN NWs were estimated. The surface band bending is important for an efficient design of high electron mobility transistors and for opto-electronic devices based on GaN NWs. This methodology provides a way to extract NW parameters without making assumptions concerning the electron affinity. We are taking advantage of electrostatic modeling and the high precision that KPFM offers to circumvent a major source of uncertainty in determining the surface band bending.

  4. Migration mechanisms and diffusion barriers of carbon and native point defects in GaN

    NASA Astrophysics Data System (ADS)

    Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico

    2016-06-01

    Carbon related defects are readily incorporated in GaN due to its abundance during growth both with MBE and MOCVD techniques. Employing first-principles calculations, we compute the migration barriers of carbon interstitials and we discuss possible relevant mechanisms of diffusion in the wurtzite GaN crystal. In addition, we calculate the migration barriers for the diffusion of the native defects of the crystal, i.e., gallium and nitrogen interstitials and vacancies. The minimum energy path and the migration barriers of these defects are obtained using the nudged elastic band method with the climbing image modification. In addition, the dimer method is used to independently determine the results. The results yield a quantitative description of carbon diffusion in GaN allowing for the determination of the most preferable migration paths.

  5. Investigation of HCl-based surface treatment for GaN devices

    SciTech Connect

    Okada, Hiroshi; Shinohara, Masatohi; Kondo, Yutaka; Sekiguchi, Hiroto; Yamane, Keisuke; Wakahara, Akihiro

    2016-02-01

    Surface treatments of GaN in HCl-based solutions are studied by X-ray photoelectron spectroscopy (XPS) and electrical characterization of fabricated GaN surfaces. A dilute-HCl treatment (HCl:H{sub 2}O=1:1) at room temperature and a boiled-HCl treatment (undiluted HCl) at 108°C are made on high-temperature annealed n-GaN. From the XPS study, removal of surface oxide by the dilute-HCl treatment was found, and more thoroughly oxide-removal was confirmed in the boiled-HCl treatment. Effect of the surface treatment on electrical characteristics on AlGaN/GaN transistor is also studied by applying treatment processes prior to the surface SiN deposition. Increase of drain current is found in boiled-HCl treated samples. The results suggest that the boiled-HCl treatment is effective for GaN device fabrication.

  6. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

    NASA Astrophysics Data System (ADS)

    Calabrese, Gabriele; Corfdir, Pierre; Gao, Guanhui; Pfüller, Carsten; Trampert, Achim; Brandt, Oliver; Geelhaar, Lutz; Fernández-Garrido, Sergio

    2016-05-01

    We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit an equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.

  7. Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Zytkiewicz, Z. R.; Sobanska, M.; Klosek, K.

    2013-08-01

    High quality Schottky contacts are formed on GaN nanowires (NWs) structures grown by the molecular beam epitaxy technique on Si(111) substrate. The current-voltage characteristics show the rectification ratio of about 103 and the leakage current of about 10-4 A/cm2 at room temperature. From the capacitance-voltage measurements the free carrier concentration in GaN NWs is determined as about 1016 cm-3. Two deep levels (H200 and E280) are found in the structures containing GaN NWs. H200 is attributed to an extended defect located at the interface between the substrate and SiNx or near the sidewalls at the bottom of the NWs whereas E280 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  8. Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE

    NASA Astrophysics Data System (ADS)

    Iwata, K.; Asahi, H.; Asami, K.; Kuroiwa, R.; Gonda, S.

    1998-06-01

    GaN layers are grown on amorphous fused silica glass substrates by gas source MBE using an ion removed electron cyclotron resonance (ECR) radical cell. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction measurements reveal that they are polycrystalline. However, they show a strong photoluminescence emission peak without deep level emission. The emission peak is red-shifted by about 150 meV from that of the excitonic emission peak of GaN grown on a sapphire substrate and has wide spectral half-width (˜250 meV at 77 K). The peak is not corresponding to the donor-acceptor pair (DAP) emission but is excitonic from the excitation power and temperature dependence of PL spectrum. These optical properties indicate that GaN layers grown on a glass substrate are promising for fabrication of large area and low cost light emitting devices and solar cells.

  9. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

    NASA Astrophysics Data System (ADS)

    Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.

    2016-09-01

    In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.

  10. Ammonothermal synthesis of GaN using Ba(NH2)2 as mineralizer

    NASA Astrophysics Data System (ADS)

    Hertrampf, J.; Alt, N. S. A.; Schlücker, E.; Knetzger, M.; Meissner, E.; Niewa, R.

    2016-12-01

    It is demonstrated that hexagonal GaN can be obtained under ammonothermal conditions (125 MPa and 723 K) using Ba(NH2)2 as mineralizer. The hexagonal wurtzite-type GaN crystallites are several μm in diameter, as examined by scanning electron microscopy. This is to our knowledge the first successful ammonothermal GaN synthesis using an alkaline-earth metal as mineralizer. Ba[Ga(NH2)4]2 was identified as intermediate species in the ammonothermal synthesis process. The formation of h-GaN using Sr(NH2)2 as mineralizer was indicated only at higher temperatures above 1000 K.

  11. On the phenomenon of large photoluminescence red shift in GaN nanoparticles.

    PubMed

    Slimane, Ahmed Ben; Najar, Adel; Elafandy, Rami; San-Román-Alerigi, Damián P; Anjum, Dalaver; Ng, Tien Khee; Ooi, Boon S

    2013-07-31

    We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications.

  12. Control of GaN crystal habit by solution stirring in the Na-flux method

    NASA Astrophysics Data System (ADS)

    Murakami, Kosuke; Imade, Mamoru; Imanishi, Masayuki; Honjo, Masatomo; Imabayashi, Hiroki; Matsuo, Daisuke; Nakamura, Kosuke; Maruyama, Mihoko; Yoshimura, Masashi; Mori, Yusuke

    2017-01-01

    In our previous study, we succeeded in fabricating low-curvature GaN wafers with low dislocation density by the Na-flux coalescence growth technique. However, the crystals consisted of many pyramidal grains with (10\\bar{1}1) facets, leading to an increase in the oxygen concentration in the crystal, an increase in the lattice constant, and blackening. In this study, we attempted to improve the crystal habit of the GaN crystals by employing a solution-stirring technique in the coalescence growth on multipoint seeds. Scanning electron microscope images indicated that the c-face area became larger by increasing the stirring rate and growth period. We concluded that solution stirring in the Na-flux coalescence growth technique is an effective approach to improve the crystal habit and uniformize the lattice constant of GaN crystals.

  13. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  14. The pyroelectric coefficient of free standing GaN grown by HVPE

    NASA Astrophysics Data System (ADS)

    Jachalke, Sven; Hofmann, Patrick; Leibiger, Gunnar; Habel, Frank S.; Mehner, Erik; Leisegang, Tilmann; Meyer, Dirk C.; Mikolajick, Thomas

    2016-10-01

    The present study reports on the temperature dependent pyroelectric coefficient of free-standing and strain-free gallium nitride (GaN) grown by hydride vapor phase epitaxy (HVPE). The Sharp-Garn method is applied to extract the pyroelectric coefficient from the electrical current response of the crystals subjected to a sinusoidal temperature excitation in a range of 0 °C to 160 °C. To avoid compensation of the pyroelectric response by an internal conductivity, insulating GaN crystals were used by applying C, Mn, and Fe doping during HVPE growth. The different pyroelectric coefficients observed at room temperature due to the doping correlate well with the change of the lattice parameter c. The obtained data are compared to previously published theoretical and experimental values of thin film GaN and discussed in terms of a strained lattice.

  15. A survey on GaN- based devices for terahertz photonics

    NASA Astrophysics Data System (ADS)

    Ahi, Kiarash; Anwar, Mehdi

    2016-09-01

    With fast growing of the photonics and power electronic systems, the need for high power- high frequency semiconductor devices is sensed tremendously. GaN provides the highest electron saturation velocity, breakdown voltage and operation temperature, and thus combined frequency-power performance among commonly used semiconductors. With achieving the first THz image in just two decades ago, generation and detection of terahertz (THz) radiation is one of the most emerging photonic areas. The industrial needs for compact, economical, high resolution and high power THz imaging and spectroscopy systems are fueling the utilization of GaN for the realizing of the next generation of THz systems. As it is reviewed in this paper, the mentioned characteristics of GaN together with its capabilities of providing high 2-dimentional election densities and large longitudinal-optical phonon of 90 meV, make it one of the most promising semiconductor materials for the future of the THz generation, detection, mixing, and frequency multiplication. GaN- based devices have shown capabilities of operating in the upper THz frequency band of 5- 12 THz with relatively high photon densities and in room temperature. As a result, THz imaging and spectroscopy systems with high resolutions and depths of penetrations can be realized via utilizing GaN- based devices. In this paper, a comprehensive review on the history and state of the art of the GaN- based electronic devices, including plasma HFETs, NDRs, HDSDs, IMPATTs, QCLs, HEMTs, Gunn diodes and TeraFETs together with their impact on the future of THz imaging and spectroscopy systems is provided.

  16. Hybrid density functional theory studies of AlN and GaN under uniaxial strain.

    PubMed

    Qin, Lixia; Duan, Yifeng; Shi, Hongliang; Shi, Liwei; Tang, Gang

    2013-01-30

    The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104).

  17. Hybrid density functional theory studies of AlN and GaN under uniaxial strain

    NASA Astrophysics Data System (ADS)

    Qin, Lixia; Duan, Yifeng; Shi, Hongliang; Shi, Liwei; Tang, Gang

    2013-01-01

    The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104).

  18. Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications

    DTIC Science & Technology

    2010-05-01

    GaN and AlN thin films on sapphire and silicon carbide ( SiC ) substrates. The methyl derivatives of the elements, namely trimethylgallium (TMGa) and...molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on ? SiC coated (001) Si substrates," Appl. Phys. Lett...34InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets," Jpn. J. Appl. Phy., vol. 35, p. 15, 1996. [32] M. A. Khan, J. N

  19. GaN ultraviolet detector based demonstrator board for UV-index monitoring

    NASA Astrophysics Data System (ADS)

    Song, Man; Xie, Feng; Wang, Jun; Wang, Tanglin; Guo, Jin

    2015-04-01

    Currently, various types of III nitride-based materials have been successfully used for short-wavelength optoelectronic devices. The GaN ultraviolet detector has been wildly used for UV-Index(UVI) monitoring, UV curing and water disinfection. The global solar UVI describes the levels of solar UV radiation at the Earth's surface. The higher the UVI value, the greater the potential damage to the skin and eyes. The UVI monitoring demonstrator board with GaN detector is briefly introduced in this paper.

  20. Thermal Conductivity of GaN Nanotubes Simulated by Nonequilibrium Molecular Dynamics

    SciTech Connect

    Wang, Zhiguo; Gao, Fei; Crocombette, J.-P.; Zu, Xiaotao; Yang, Li; Weber, William J.

    2007-04-15

    Thermal conductivity of GaN nanotubes along the tube axis is investigated over the temperature range of 600K-2300K using homogeneous nonequilibrium molecular dynamics. In general, the thermal conductivity of nanotubes is smaller than that for the bulk GaN single crystal. The thermal conductivity is also found to decrease with temperature and increase with increasing wall thickness of the nanotubes. The change of phonon spectrum and surface inelastic scattering may account for the reduction of thermal conductivity in the nanotubes, while thermal softening and high frequency phonon interactions at high temperatures may provide an explanation for its decrease with increasing temperature.

  1. Modeling of radiation damage recovery in particle detectors based on GaN

    NASA Astrophysics Data System (ADS)

    Gaubas, E.; Ceponis, T.; Pavlov, J.

    2015-12-01

    The pulsed characteristics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the commercial software package Synopsys TCAD Sentaurus. The bipolar drift regime has been analyzed. The possible internal gain in charge collection through carrier multiplication processes determined by impact ionization has been considered in order to compensate carrier lifetime reduction due to radiation defects introduced into GaN material of detector.

  2. An Optimal Density Functional Theory Method for GaN and ZnO

    SciTech Connect

    Yu, H.G.

    2011-08-25

    We report an optimal DFT method (bBLYP) for studying the GaN and ZnO systems. It is developed by modifying the exchange functional in the hybrid BLYP method in order to overcome the flaw of traditional DFT that often predict a rather small band gap for those semiconductors. Results show that the bBLYP method can describe not only correct band gaps of both GaN and ZnO wurtzite crystals, but also accurate properties of relevant small molecules. The application study of crystal-cut nanoparticles and nanowires reveals a new mechanism for band gap narrowing in GaN/ZnO.

  3. Simulation of optimum parameters for GaN MSM UV photodetector

    NASA Astrophysics Data System (ADS)

    Alhelfi, Mohanad A.; Ahmed, Naser M.; Hashim, M. R.; Al-Rawi, Ali Amer; Hassan, Z.

    2016-07-01

    In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

  4. Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

    DTIC Science & Technology

    2002-01-01

    Kim, A. Botchkarev, H. Morkoc, "Deep level defects in n-type GaN grown by molecular beam epitaxy," Applied Physics Letters 72, pp. 1211-1213, 1998. 34...photoionization cross section are due to a lattice relaxation associated with a capture barrier for the DX center. Polyakov , et al. has also pointed out that...ohmic contacts to n-type GaN," Materials Science and Engineering B59 , pp. 358-361, 1999. 10. J. Rennie, M. Onomura, S. Nunoue, G. Hatakoshi, H

  5. First-Principles Study of Defects in GaN, AlN and Their Alloys

    DTIC Science & Technology

    2010-08-31

    studied the similar type of pairs in GaN, i.e. Gai -VGa. These types of defect complexes are called Frenkel pairs which are believed to form when the...defects have been carried out.[17-21] In our previous program, we studied the GaGa i V− pairs in GaN. We found that Gai can occur in 3+, 2+, and 1...charge states, depending on the Fermi energy of the sample. VGa can occur in 3−, 2−, 1−, and neutral charge states. Because Gai and VGa have

  6. Simulations of Operation Dynamics of Different Type GaN Particle Sensors

    PubMed Central

    Gaubas, Eugenijus; Ceponis, Tomas; Kalesinskas, Vidas; Pavlov, Jevgenij; Vysniauskas, Juozas

    2015-01-01

    The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material. PMID:25751080

  7. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching

    NASA Astrophysics Data System (ADS)

    Tiginyanu, I. M.; Ursaki, V. V.; Zalamai, V. V.; Langa, S.; Hubbard, S.; Pavlidis, D.; Föll, H.

    2003-08-01

    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence spectroscopy characterization shows that the as-grown bulk GaN layers suffer from compressive biaxial strain of 0.5 GPa. The majority of nanocolumns are fully relaxed from strain, and the room-temperature luminescence is free excitonic. The high quality of the columnar nanostructures evidenced by the enhanced intensity of the exciton luminescence and by the decrease of the yellow luminescence is explained by the peculiarities of the anodic etching processing.

  8. Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

    NASA Astrophysics Data System (ADS)

    Semenenko, M.; Yilmazoglu, O.; Hartnagel, H. L.; Pavlidis, D.

    2011-01-01

    Argon plasma etched GaN field-emitter rods with nanometer-scale diameter were fabricated on GaN grown on an n+-GaN substrate. Their electron field emission properties were investigated both without and under illumination by using light sources with various wavelengths. The Fowler-Nordheim current-voltage characteristics of the cathodes show a change in slope for illuminated cathodes. The electron affinity difference ΔE between the different valleys in the conduction band has been ascertained and is in the range from 1.18 up to 1.21 eV.

  9. Doping induced structural stability and electronic properties of GaN nanotubes.

    PubMed

    Srivastava, Anurag; Khan, Mohammad Irfan; Tyagi, Neha; Swaroop Khare, Purnima

    2014-01-01

    The present paper discusses the effect of manganese doping on the structural stability and electronic band gap of chiral (2, 1), armchair (3, 3), and zigzag ((6, 0) and (10, 0)) single walled GaN nanotube by using density functional theory based Atomistix Toolkit (ATK) Virtual NanoLab (VNL). The structural stability has been analyzed in terms of minimum ground state total energy, binding, and formation energy. As an effect of Mn doping (1-4 atoms), all the GaN nanotubes taken into consideration show semiconducting to metallic transition first and after certain level of Mn doping changes its trend.

  10. Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes

    PubMed Central

    Khan, Mohammad Irfan; Tyagi, Neha; Swaroop Khare, Purnima

    2014-01-01

    The present paper discusses the effect of manganese doping on the structural stability and electronic band gap of chiral (2, 1), armchair (3, 3), and zigzag ((6, 0) and (10, 0)) single walled GaN nanotube by using density functional theory based Atomistix Toolkit (ATK) Virtual NanoLab (VNL). The structural stability has been analyzed in terms of minimum ground state total energy, binding, and formation energy. As an effect of Mn doping (1–4 atoms), all the GaN nanotubes taken into consideration show semiconducting to metallic transition first and after certain level of Mn doping changes its trend. PMID:24707225

  11. Nucleation and Growth of GaN on GaAs (001) Substrates

    SciTech Connect

    Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

    1999-05-03

    The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

  12. Optimization of GaN Nanorod Growth Conditions for Coalescence Overgrowth

    DTIC Science & Technology

    2016-02-04

    serves as the catalyst for precipitating GaN below the droplet when its absorption of N atoms reaches the super-saturation condition. In this vapor-liquid...C. Chèze, L. Geelhaar, B. Jenichen, H. Riechert, Different growth rates for catalyst -induced and self-induced GaN nanowires, Appl. Phys. Lett. 97...15] W. Guo, M. Zhang, A. Banerjee, P. Bhattacharya, Catalyst -free InGaN/GaN DISTRIBUTION A: Distribution approved for public release. 9

  13. X-ray detectors based on GaN Schottky diodes

    SciTech Connect

    Duboz, Jean-Yves; Frayssinet, Eric; Chenot, Sebastien; Reverchon, Jean-Luc; Idir, Mourad

    2010-10-18

    GaN Schottky diodes have been fabricated and tested as x-ray detectors in the range from 6 to 21 keV. The spectral response has been measured and is compared to its theoretical value. The study of the response and its temporal dynamics as a function of the bias allows to identify a photovoltaic behavior at low bias and a photoconductive one at larger reverse biases. The GaN diode turned out to be linear as a function of the incident power. The noise and detectivity are given and discussed.

  14. Functionalizing the GaN(0001)-(1 x 1) Surface. I. The Chemisorption of Aniline

    DTIC Science & Technology

    2001-11-01

    tion. Extending this work to wide-bandgap materials such as SiC and GaN offers advantages over the use of Si as a substrate . In optoelectronic devices...the wide bandgap of 6H–SiC (3.0 eV) or GaN (3.4 eV) permits optical access to the organic layer through the substrate as well as through space...occupied and lowest unoccupied molecular orbitals (HOMO and LUMO, respectively) of the organic adsorbate with the substrate band edges. This opens the

  15. Habit control during growth on GaN point seed crystals by Na-flux method

    NASA Astrophysics Data System (ADS)

    Honjo, Masatomo; Imanishi, Masayuki; Imabayashi, Hiroki; Nakamura, Kosuke; Murakami, Kosuke; Matsuo, Daisuke; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2017-01-01

    The formation of the pyramidal habit is one of the requirements for the dramatic reduction of dislocations during growth on a tiny GaN seed called a “point seed”. In this study, we focus on controlling the growth habit to form a pyramidal shape in order to reduce the number of dislocations in the c-growth sector during growth on GaN point seeds. High temperature growth was found to change the growth habit from the truncated pyramidal shape to the pyramidal shape. As a result, the number of dislocations in the c-growth sector tended to decrease with increasing growth temperature.

  16. Investigation of structural and optical properties of GaN on flat and porous silicon

    NASA Astrophysics Data System (ADS)

    Abud, Saleh H.; Selman, Abbas M.; Hassan, Z.

    2016-09-01

    In this work, gallium nitride (GaN) layers were successfully grown on Flat-Si and porous silicon (PSi) using a radio frequency-magnetron sputtering system. Field emission scanning electron microscopy and atomic force microscopy images showed that the grown film on Flat-Si had smoother surface, even though there were some cracks on it. Furthermore, the X-ray diffraction measurements showed that the peak intensity of all the grown layers on PSi was higher than that of the grown layer on Flat-Si. Our detailed observation showed that PSi is a promising substrate to obtain GaN films.

  17. Ge doped GaN with controllable high carrier concentration for plasmonic applications

    SciTech Connect

    Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko; Nenstiel, Christian; Hoffmann, Axel

    2013-12-09

    Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 10{sup 20} cm{sup −3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm{sup −1} and a surface plasma with an energy around 2000 cm{sup −1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

  18. Orbitally driven low thermal conductivity of monolayer gallium nitride (GaN) with planar honeycomb structure: a comparative study.

    PubMed

    Qin, Zhenzhen; Qin, Guangzhao; Zuo, Xu; Xiong, Zhihua; Hu, Ming

    2017-03-23

    Two-dimensional (2D) materials with graphene as a representative have been intensively studied for a long time. Recently, monolayer gallium nitride (ML GaN) with honeycomb structure was successfully fabricated in experiments, generating enormous research interest for its promising applications in nano- and opto-electronics. Considering all these applications are inevitably involved with thermal transport, systematic investigation of the phonon transport properties of 2D GaN is in demand. In this paper, by solving the Boltzmann transport equation (BTE) based on first-principles calculations, we performed a comprehensive study of the phonon transport properties of ML GaN, with detailed comparison to bulk GaN, 2D graphene, silicene and ML BN with similar honeycomb structure. Considering the similar planar structure of ML GaN to graphene, it is quite intriguing to find that the thermal conductivity (κ) of ML GaN (14.93 W mK(-1)) is more than two orders of magnitude lower than that of graphene and is even lower than that of silicene with a buckled structure. Systematic analysis is performed based on the study of the contribution from phonon branches, comparison among the mode level phonon group velocity and lifetime, the detailed process and channels of phonon-phonon scattering, and phonon anharmonicity with potential energy well. We found that, different from graphene and ML BN, the phonon-phonon scattering selection rule in 2D GaN is slightly broken by the lowered symmetry due to the large difference in the atomic radius and mass between Ga and N atoms. Further deep insight is gained from the electronic structure. Resulting from the special sp orbital hybridization mediated by the Ga-d orbital in ML GaN, the strongly polarized Ga-N bond, localized charge density, and its inhomogeneous distribution induce large phonon anharmonicity and lead to the intrinsic low κ of ML GaN. The orbitally driven low κ of ML GaN unraveled in this work would make 2D GaN prospective for

  19. Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods

    PubMed

    Kuwan; Tsukamoto; Taki; Horibuchi; Oki; Kawaguchi; Shibata; Sawaki; Hiramatsu

    2000-01-01

    Cross-sectional transmission electron microscope (TEM) observation was performed for selectively grown gallium nitride (GaN) in order to examine the dependence of GaN microstructure on the growth conditions. The GaN films were grown by hydride vapour phase epitaxy (HVPE) or metalorganic vapour phase epitaxy (MOVPE) on GaN covered with a patterned mask. Thin foil specimens for TEM observation were prepared with focused ion beam (FIB) machining apparatus. It was demonstrated that the c-axis of GaN grown over the terrace of the mask tilts towards the centre of the terrace when the GaN is grown in a carrier gas of N2. The wider terrace results in a larger tilting angle if other growth conditions are identical. The tilting is attributed to 'horizontal dislocations' (HDs) generated during the overgrowth of GaN on the mask terrace. The HDs in HVPE-GaN have a semi-loop shape and are tangled with one another, while those in MOVPE-GaN are straight and lined up to form low-angle grain boundaries.

  20. Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures

    SciTech Connect

    Winnerl, Andrea Pereira, Rui N.; Stutzmann, Martin

    2015-10-21

    In this work, we use GaN with different deposited Pt nanostructures as a controllable model system to investigate the kinetics of photo-generated charge carriers in hybrid photocatalysts. We combine conductance and contact potential difference measurements to investigate the influence of Pt on the processes involved in the capture and decay of photo-generated charge carriers at and close to the GaN surface. We found that in the presence of Pt nanostructures the photo-excitation processes are similar to those found in Pt free GaN. However, in GaN with Pt nanostructures, photo-generated holes are preferentially trapped in surface states of the GaN covered with Pt and/or in electronic states of the Pt and lead to an accumulation of positive charge there, whereas negative charge is accumulated in localized states in a shallow defect band of the GaN covered with Pt. This preferential accumulation of photo-generated electrons close to the surface is responsible for a dramatic acceleration of the turn-off charge transfer kinetics and a stronger dependence of the surface photovoltage on light intensity when compared to a Pt free GaN surface. Our study shows that in hybrid photocatalysts, the metal nanostructures induce a spatially inhomogeneous surface band bending of the semiconductor that promotes a lateral drift of photogenerated charges towards the catalytic nanostructures.

  1. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

    SciTech Connect

    Ansah-Antwi, KwaDwo Konadu Chua, Soo Jin; Soh, Chew Beng; Liu, Hongfei

    2015-11-15

    The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

  2. Yi-gan san restores behavioral alterations and a decrease of brain glutathione level in a mouse model of schizophrenia.

    PubMed

    Makinodan, Manabu; Yamauchi, Takahira; Tatsumi, Kouko; Okuda, Hiroaki; Noriyama, Yoshinobu; Sadamatsu, Miyuki; Kishimoto, Toshifumi; Wanaka, Akio

    2009-01-01

    The traditional Chinese herbal medicine yi-gan san has been used to cure neuropsychological disorders. Schizophrenia can be one of the target diseases of yi-gan san. We aimed at evaluating the possible use of yi-gan san in improving the schizophrenic symptoms of an animal model. Yi-gan san or distilled water was administered to mice born from pregnant mice injected with polyinosinic-polycytidilic acid or phosphate buffered saline. The former is a model of schizophrenia based on the epidemiological data that maternal infection leads to psychotic disorders including schizophrenia in the offspring. Prepulse inhibition and sensitivity to methamphetamine in open field tests were analyzed and the total glutathione content of whole brains was measured. Yi-gan san reversed the decrease in prepulse inhibition, hypersensitivity to methamphetamine and cognitive deficits found in the model mice to the level of control mice. Total glutathione content in whole brains was reduced in the model mice but was restored to normal levels by yi-gan san treatment. These results suggest that yi-gan san may have ameliorating effects on the pathological symptoms of schizophrenia.

  3. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation*

    NASA Astrophysics Data System (ADS)

    Amano, Hiroshi

    2015-10-01

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p -type GaN was established are reviewed.

  4. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

    NASA Astrophysics Data System (ADS)

    Amano, Hiroshi

    2015-12-01

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

  5. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  6. The photocatalytic properties of hollow (GaN)1-x(ZnO)x composite nanofibers synthesized by electrospinning

    NASA Astrophysics Data System (ADS)

    Wang, Ding; Zhang, Minglu; Zhuang, Huaijuan; Chen, Xu; Wang, Xianying; Zheng, Xuejun; Yang, Junhe

    2017-02-01

    (GaN)1-x(ZnO)x composite nanofibers with hollow structure were prepared by initial electrospinning, and the subsequent calcination and nitridation. The structure and morphology characteristics of samples were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The characterization results showed the phase transition from ZnGa2O4 to (GaN)1-x(ZnO)x solid-solution under ammonia atmosphere. The preparation conditions were explored and the optimum nitridation temperature and holding time are 750 °C and 2 h, respectively. The photocatalytic properties of (GaN)1-x(ZnO)x with different Ga:Zn atomic ratios were investigated by degrading Rhodamine B under the visible light irradiation. The photocatalytic activity sequence is (GaN)1-x(ZnO)x (Ga:Zn = 1:2) > (GaN)1-x(ZnO)x (Ga:Zn = 1:3) > ZnO nanofibers > (GaN)1-x(ZnO)x (Ga:Zn = 1:4) > (GaN)1-x(ZnO)x (Ga:Zn = 1:1). The photocatalytic mechanism of the (GaN)1-x(ZnO)x hollow nanofibers was further studied by UV-vis diffuse reflectance spectra. The excellent photocatalytic performance of (GaN)1-x(ZnO)x hollow nanofibers was attributed to the narrow band gap and high surface area of porous nanofibers with hollow structure.

  7. MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer

    NASA Astrophysics Data System (ADS)

    Boo, Jin-Hyo; Rohr, Carsten; Ho, Wilson

    1998-06-01

    Highly oriented polycrystalline h-BN thin films were deposited on silicon substrates in the temperature range of 600-900°C from the single molecular precursor of borane-triethylamine complex, (C 2H 5) 3N : BH 3, by supersonic jet assisted chemical vapor deposition. Hydrogen was used as carrier gas, and additional nitrogen was supplied by either ammonia through a nozzle or nitrogen via a remote microwave plasma. Hexagonal GaN films were also grown on Si(1 0 0) with h-BN buffer layers at temperatures between 550 and 750°C with dual supersonic molecular beam sources. Triethylgallium, (C 2H 5) 3Ga, and ammonia, NH 3, were used as precursors. Hydrogen was used as seeding gas for the precursors, providing a wide range of possible kinetic energies for the supersonic beams. The h-BN buffer layers and the GaN films were characterized in situ by Auger electron spectroscopy (AES), and ex situ by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and optical transmission. This is the first report of growing the h-BN films on silicon substrates from the single source precursor of borane-triethylamine complex and new attempts of GaN film growth on silicon with BN buffer layer.

  8. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

    NASA Astrophysics Data System (ADS)

    Mukai, Takashi; Nakamura, Shuji

    1999-10-01

    Ultraviolet (UV) InGaN and GaN single-quantum-well-structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire only under high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even under low-and high-current operations, due to the lack of localized energy states formed by alloy composition fluctuations. When the emission wavelengths were in the blue and green regions, EQE was almost the same between LEDs on both ELOG and sapphire due to a large number of deep localized energy states formed by large alloy composition fluctuations. The localized energy states are responsible for the high efficiency of InGaN-based LEDs in spite of a large number of dislocations.

  9. Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

    SciTech Connect

    Benton, J.; Bai, J.; Wang, T.

    2014-12-01

    We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved.

  10. Combined atomic force microscopy and scanning tunneling microscopy imaging of cross-sectioned GaN light-emitting diodes.

    PubMed

    Bender, J W; Salmon, M E; Russell, P E

    2003-01-01

    Cross-sectional scanning tunneling microscopy (STM) was combined with atomic force microscopy (AFM) over the same area to characterize a cross-sectioned GaN light emitting diode. Because GaN is typically grown on a non-native substrate and also forms a wurtzite crystal structure, a cryogenic cleaving technique was developed to generate smooth surfaces. The depletion region surrounding the p-n junction was clearly identified using STM. Furthermore, by imaging under multiple sample biases, distinctions between the n-doped and p-doped GaN could be made.

  11. Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    He, Shunyu; Xu, Yu; Qi, Lin; Li, Zongyao; Cao, Bing; Wang, Chinhua; Zhang, Jicai; Wang, Jianfeng; Xu, Ke

    2017-03-01

    Recently, gallium nitride (GaN) films grown on graphene have been widely studied. Here, we have grown low-threading-dislocation-density GaN films on graphene by hydride vapor phase epitaxy (HVPE). The full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) of the GaN films were 276 and 350 arcsec at the 0002 and 10\\bar{1}2 reflections, respectively. This shows that the threading dislocation densities are on the order of magnitude of 108 cm‑2, which is consistent with the results of cathodoluminescence (CL).

  12. Simulation of electrical characteristics of GaN vertical Schottky diodes

    NASA Astrophysics Data System (ADS)

    Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej

    2016-12-01

    Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

  13. Cathodoluminescence of GaN nanorods and nanowires grown by thermal evaporation

    NASA Astrophysics Data System (ADS)

    Guzmán, G.; Herrera, M.

    2014-02-01

    GaN nanorods and nanowires have been grown by thermal evaporation of GaN on Au/Si (1 0 0) substrates. The nanorods recorded a surface decorated with numerous grains with an average size of about 100 nm. The nanowires grew onto the surface of the nanorods exhibiting multiple bends along them. TEM measurements revealed the formation of irregular porous and a polycrystalline structure in the nanowires with diameter higher than 100 nm, while the nanowires with lower diameter showed a tubular structure with wall thickness of 10 nm. The luminescence of the samples recorded three bands centered at about 2.1, 2.74, and 3.2 eV, attributed to the GaN yellow emission and to the blue and UV emissions of the β-Ga2O3, respectively. Ga-ion irradiation in samples revealed a decrease in the intensity of the β-Ga2O3 blue emission attributed to the elimination of gallium vacancies. A thermal annealing treatment at 800 °C in N2 atmosphere generated a quenching of the GaN yellow emission, due to the elimination of nitrogen vacancies.

  14. Electrical properties of Si-doped GaN prepared using pulsed sputtering

    NASA Astrophysics Data System (ADS)

    Arakawa, Yasuaki; Ueno, Kohei; Imabeppu, Hideyuki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-01-01

    In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm-3. For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm-3), the room temperature (RT) electron mobility was as high as 1008 cm2 V-1 s-1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V-1 s-1 at an electron concentration of 2 × 1020 cm-3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2 V-1 s-1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices.

  15. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  16. GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting

    NASA Astrophysics Data System (ADS)

    Hou, Y.; Yu, X.; Syed, Z. Ahmed; Shen, S.; Bai, J.; Wang, T.

    2016-11-01

    A prototype photoelectrode has been fabricated using a GaN nano-pyramid array structure grown on a cost-effective Si (111) substrate, demonstrating a significant improvement in performance of solar-powered water splitting compared with any planar GaN photoelectrode. Such a nano-pyramid structure leads to enhanced optical absorption as a result of a multi-scattering process which can effectively produce a reduction in reflectance. A simulation based on a finite-difference time-domain approach indicates that the nano-pyramid architecture enables incident light to be concentrated within the nano-pyramids as a result of micro-cavity effects, further enhancing optical absorption. Furthermore, the shape of the nano-pyramid further facilitates the photo-generated carrier transportation by enhancing a hole-transfer efficiency. All these features as a result of the nano-pyramid configuration lead to a large photocurrent of 1 mA cm-2 under an illumination density of 200 mW cm-2, with a peak incident photon-to-current conversion efficiency of 46.5% at ˜365 nm, around the band edge emission wavelength of GaN. The results presented are expected to pave the way for the fabrication of GaN based photoelectrodes with a high energy conversion efficiency of solar powered water splitting.

  17. GaN nanostructure-based light emitting diodes and semiconductor lasers.

    PubMed

    Viswanath, Annamraju Kasi

    2014-02-01

    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  18. Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix

    NASA Astrophysics Data System (ADS)

    Kioseoglou, J.; Katsikini, M.; Termentzidis, K.; Karakostas, I.; Paloura, E. C.

    2017-02-01

    The formation of wurtzite GaN nanoclusters in an amorphous silica matrix, via gallium and nitrogen ion implantation and rapid thermal annealing, is identified using Extended X Ray Absorption Fine Structure analysis. The mechanism and the crucial parameters that rule the formation of the nanoclusters are established by the use of molecular dynamics simulations. The dominant structural parameters are found to be the concentration of the silicon and oxygen vacancies that are formed during the implantation and the annealing temperature. It is concluded that annealing at 1400 K and 8% Ga/Si and 12% N/O ratios are needed for the formation of GaN nanoclusters. In addition to that, the GaN nanocluster formation is accomplished only when the vacancy concentrations of silicon and oxygen atoms are equal to 10% and 20%, respectively. Finally, the observation of various snapshots upon an increase of the annealing duration indicates the coalescence of smaller GaN nuclei towards larger ones, designating that the Ostwald ripening is a dominant mechanism.

  19. Uniaxial strain effects on the optoelectronic properties of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Xia, Sihao; Liu, Lei; Kong, Yike; Wang, Meishan

    2016-09-01

    Considering the importance of strain engineering on semiconductors, GaN nanowires under uniaxial compression deformation and stretch deformation are researched using first principle calculations with density functional theory. It is found that the deformation will destroy the stability of the nanowires except a weak stretch. The compression deformation is more difficult than the stretch deformation. Besides, the work function of the nanowires is reduced under increasing compression while that under increasing stretch is reversed. With increasing diameter, the band gaps of the nanowires gradually exhibit a linear decreasing relation as the elongation of uniaxial length of GaN nanowires. With increasing compression, the band gaps change from direct to indirect. The optical calculations exhibit a redshift for the imaginary part of dielectric function. This study demonstrates strain engineering can effectively adjust the optoelectronic characteristics of GaN nanowire. Moderate compression, which induces a lower work function with a direct band gap, can improve the photoemission performance of GaN nanowires.

  20. GaN Haeckelite Single-Layered Nanostructures: Monolayer and Nanotubes

    PubMed Central

    Camacho-Mojica, Dulce C.; López-Urías, Florentino

    2015-01-01

    Nowadays, III-V semiconductors are interesting candidate materials for the tailoring of two dimensional (2D) graphene-like structures. These new 2D materials have attracted profound interest opening the possibility to find semiconductor materials with unexplored properties. First-principles density functional theory calculations are performed in order to investigate the electronic properties of GaN planar and nanotube morphologies based on Haeckelite structures (containing octagonal and square membered rings). Optimized geometries, band-structures, phonon dispersion, binding energies, transmission electron microscopy images simulations, x-ray diffraction patterns, charge densities, and electronic band gaps are calculated. We demonstrated that GaN Haeckelite structures are stable exhibiting a semiconducting behavior with an indirect band gap. Furthermore, it was found that GaN Haeckelite nanotubes are semiconductor with a band gap nature (direct or indirect) that depends of the nanotube´s chirality and diameter. In addition, it was demonstrated that surface passivation and the interaction with hydrazine, water, ammonia, and carbon monoxide molecules can change the band-gap nature. Our results are compared with the corresponding GaN hexagonal honeycomb structures. PMID:26658148

  1. Evaluation of the influence mode on the CVC GaN HEMT using numerical modeling

    NASA Astrophysics Data System (ADS)

    Parnes, Ya M.; Tikhomirov, V. G.; Petrov, V. A.; Gudkov, A. G.; Marzhanovskiy, I. N.; Kukhareva, E. S.; Vyuginov, V. N.; Volkov, V. V.; Zybin, A. A.

    2016-08-01

    Done numerically simulated the effects of certain modes of operation on the CVC of field microwave transistors on the basis of heterostructures AlGaN / GaN (HEMT). The results of these studies suggest the possibility of quite efficient use of numerical simulation for the development of HEMT microwave transistors allowing for the real instrument designs.

  2. Fine structure of the red luminescence band in undoped GaN

    SciTech Connect

    Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.

    2014-01-20

    Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor phase epitaxy (HVPE) detrimentally affects the material quality and may hinder the use of GaN in high-power electronic devices. One of the main PL bands in HVPE-grown GaN is the red luminescence (RL) band with a maximum at 1.8 eV. We observed the fine structure of this band with a zero-phonon line (ZPL) at 2.36 eV, which may help to identify the related defect. The shift of the ZPL with excitation intensity and the temperature-related transformation of the RL band fine structure indicate that the RL band is caused by transitions from a shallow donor (at low temperature) or from the conduction band (above 50 K) to an unknown deep acceptor having an energy level 1.130 eV above the valence band.

  3. GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium

    SciTech Connect

    Bartram, Michael E.; Creighton, J. Randall

    1999-05-26

    Isotopic labeling experiments have revealed correlations between hydrogen reactions, Ga desorption, and ammonia decomposition in GaN CVD. Low energy electron diffraction (LEED) and temperature programmed desorption (TPD) were used to demonstrate that hydrogen atoms are available on the surface for reaction after exposing GaN(0001) to deuterium at elevated temperatures. Hydrogen reactions also lowered the temperature for Ga desorption significantly. Ammonia did not decompose on the surface before hydrogen exposure. However, after hydrogen reactions altered the surface, N15H3 did undergo both reversible and irreversible decomposition. This also resulted in the desorption of N2 of mixed isotopes below the onset of GaN sublimation, This suggests that the driving force of the high nitrogen-nitrogen bond strength (226 kcal/mol) can lead to the removal of nitrogen from the substrate when the surface is nitrogen rich. Overall, these findings indicate that hydrogen can influence G-aN CVD significantly, being a common factor in the reactivity of the surface, the desorption of Ga, and the decomposition of ammonia.

  4. GaN IMPATT diode: a photo-sensitive high power terahertz source

    NASA Astrophysics Data System (ADS)

    Mukherjee, Moumita; Mazumder, Nilraton; Roy, Sitesh Kumar; Goswami, Kushalendu

    2007-12-01

    The prospects of wurtzite phase single-drift-region (SDR), flat and single-low-high-low (SLHL) type GaN IMPATT devices as terahertz sources are studied through a simulation experiment. The study indicates that GaN IMPATT diodes are capable of generating high RF power (at least 2.5 W) at around 1.45 THz with high efficiency (17-20%). The superior electronic properties of GaN make this a promising candidate for IMPATT operation in the THz regime, unapproachable by conventional Si, GaAs and InP based IMPATT diodes. The effect of parasitic series resistance on the THz performance of the device is further simulated. It is interesting to note that the presence of a charge bump in a flatly doped SDR structure reduces the value of parasitic series resistance by 22%. The effects of photo- illumination on the devices are also investigated using a modified double iterative simulation technique. Under photo-illumination (i) the negative conductance and (ii) the negative resistance of the devices (both flat and SLHL) decrease, while the frequency of operation and the device quality factor shift upwards. However, the upward shift in operating frequency is found to be more (~16 GHz) in the case of the SLHL SDR IMPATT device. The study indicates that GaN IMPATT is a promising opto-sensitive high power THz source.

  5. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

    NASA Astrophysics Data System (ADS)

    Velazquez, R.; Aldalbahi, A.; Rivera, M.; Feng, P.

    2016-08-01

    High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

  6. Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

    SciTech Connect

    Wang, M. J.; Yuan, L.; Chen, K. J.; Xu, F. J.; Shen, B.

    2009-04-15

    The diffusion mechanisms of fluorine ions in GaN are investigated by means of time-of-flight secondary ion mass spectrometry. Instead of incorporating fluorine ions close to the sample surface by fluorine plasma treatment, fluorine ion implantation with an energy of 180 keV is utilized to implant fluorine ions deep into the GaN bulk, preventing the surface effects from affecting the data analysis. It is found that the diffusion of fluorine ions in GaN is a dynamic process featuring an initial out-diffusion followed by in- diffusion and the final stabilization. A vacancy-assisted diffusion model is proposed to account for the experimental observations, which is also consistent with results on molecular dynamic simulation. Fluorine ions tend to occupy Ga vacancies induced by ion implantation and diffuse to vacancy rich regions. The number of continuous vacancy chains can be significantly reduced by a dynamic thermal annealing process. As a result, strong local confinement and stabilization of fluorine ions can be obtained in GaN crystal, suggesting excellent thermal stability of fluorine ions for device applications.

  7. GalaxyGAN: Generative Adversarial Networks for recovery of galaxy features

    NASA Astrophysics Data System (ADS)

    Schawinski, Kevin; Zhang, Ce; Zhang, Hantian; Fowler, Lucas; Krishnan Santhanam, Gokula

    2017-02-01

    GalaxyGAN uses Generative Adversarial Networks to reliably recover features in images of galaxies. The package uses machine learning to train on higher quality data and learns to recover detailed features such as galaxy morphology by effectively building priors. This method opens up the possibility of recovering more information from existing and future imaging data.

  8. Incorporation of Mg in Free-Standing HVPE GaN Substrates

    NASA Astrophysics Data System (ADS)

    Zvanut, M. E.; Dashdorj, J.; Freitas, J. A.; Glaser, E. R.; Willoughby, W. R.; Leach, J. H.; Udwary, K.

    2016-06-01

    Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm-3 and 1019 cm-3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor-shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm-3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.

  9. GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting.

    PubMed

    Hou, Y; Yu, X; Syed, Z Ahmed; Shen, S; Bai, J; Wang, T

    2016-11-11

    A prototype photoelectrode has been fabricated using a GaN nano-pyramid array structure grown on a cost-effective Si (111) substrate, demonstrating a significant improvement in performance of solar-powered water splitting compared with any planar GaN photoelectrode. Such a nano-pyramid structure leads to enhanced optical absorption as a result of a multi-scattering process which can effectively produce a reduction in reflectance. A simulation based on a finite-difference time-domain approach indicates that the nano-pyramid architecture enables incident light to be concentrated within the nano-pyramids as a result of micro-cavity effects, further enhancing optical absorption. Furthermore, the shape of the nano-pyramid further facilitates the photo-generated carrier transportation by enhancing a hole-transfer efficiency. All these features as a result of the nano-pyramid configuration lead to a large photocurrent of 1 mA cm(-2) under an illumination density of 200 mW cm(-2), with a peak incident photon-to-current conversion efficiency of 46.5% at ∼365 nm, around the band edge emission wavelength of GaN. The results presented are expected to pave the way for the fabrication of GaN based photoelectrodes with a high energy conversion efficiency of solar powered water splitting.

  10. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    SciTech Connect

    Bajaj, Sanyam Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  11. Photoluminescence Observation of GaN Thin Films Treated by Inductively-Coupled Plasmas

    NASA Astrophysics Data System (ADS)

    Nakamura, Keiji; Itoh, Noriyoshi; Nakano, Yoshitaka; Sugai, Hideo

    2011-10-01

    This paper reports observations of photoluminescence from plasma-treated GaN thin films. A 10 mTorr Ar ICP was used, and irradiation of 313 nm ultraviolet (UV) light from Hg-Xe light source induced the photoluminescence of the GaN film. In both in-situ and ex-situ observations, significant yellow luminescence was observed visually, and the ex-situ observed luminescence ranges in a wavelength of 500-800 nm corresponding to defect-states-related transition. The measurements also revealed that the luminescence also contains UV emission at a wavelength of ~365 nm attributed to transition related to near band edges. In order to examine effects of the plasma on the luminescence, the ex-situ observation was made as a function of the plasma treatment time. As the treatment time increased, both the UV and the luminescence intensity decreased, and the decrease in the emission became significant when the 313 nm UV light was irradiated onto the plasma-exposed GaN surface. These results suggested that plasma-induced defect formation leads to the luminescence degradation, and that the photoluminescence observation will be useful for damage monitoring of the GaN surface. This work is partly supported by the 2nd stage Knowledge Cluster Initiative and Grant-in-Aid for Scientific Research (C) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

  12. Fabrication of non-polar GaN based highly responsive and fast UV photodetector

    NASA Astrophysics Data System (ADS)

    Gundimeda, Abhiram; Krishna, Shibin; Aggarwal, Neha; Sharma, Alka; Sharma, Nita Dilawar; Maurya, K. K.; Husale, Sudhir; Gupta, Govind

    2017-03-01

    We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10-11 WHz-1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

  13. Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT).

    PubMed

    Seo, Jae Hwa; Yoon, Young Jun; Lee, Hwan Gi; Yoo, Gwan Min; Jo, Young-Woo; Son, Dong-Hyeok; Lee, Jung-Hee; Cho, Eou-Sik; Cho, Seongjae; Kang, In Man

    2014-11-01

    Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature. In this paper, we analyze the direct-current (DC) characteristics depending on various channel doping concentrations (N(ch)) and nanowire radii (R(NW)). Furthermore, the radio-frequency (RF) characteristics under optimized conditions are extracted by small-signal equivalent circuit modeling. For the optimally designed vertical GaN JNT demonstrated on-state current (I(on)) of 345 μA/μm and off-state current (I(off)) of 3.7 x 10(-18) A/μm with a threshold voltage (V(t)) of 0.22 V, and subthreshold swing (S) of 68 mV/dec. Besides, f(T) and f(max) under different operating conditions (gate voltage, V(GS)) have been obtained.

  14. POF data link employing a display-type green LED fabricated from GaN material

    NASA Astrophysics Data System (ADS)

    Kato, Satoru; Kagami, Manabu; Ito, Hiroshi

    2003-07-01

    Data links incorporating a green light source at 520nm are required for use with polymethyl methacrylate (PMMA) plastic optical fiber (POF) systems because they have a lower attenuation coefficient compared with conventional red light sources at 650nm. Recently, green LEDs have been developed based on Gallium Nitride (GaN) materials, and high optical output power GaN green LED lamps are now commercially available for general use in display applications. In this paper, we describe in detail the fundamental characteristics of these GaN green LEDs that are due to be employed in POF data links. We evaluate the temperature coefficients of the optical output power and the center wavelength shift and also demonstrate a green LED POF data link that complies with IEEE 1394 S100 operation. GaN green LEDs seem to be promising candidates as light sources for the next generation of POF data links for automotive applications or for long distance In-house multimedia networks. This is because, as we will show, they can operate both at high temperatures and with reduced temperature sensitivity compared with red LEDs fabricated from AlGaInP materials.

  15. The controlled growth of GaN microrods on Si(111) substrates by MOCVD

    NASA Astrophysics Data System (ADS)

    Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

    2015-03-01

    In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

  16. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence

    DOE PAGES

    Chisholm, Matthew F.; Golam Sarwar, A. T. M.; Myers, Roberto C.; ...

    2016-03-18

    By quantum confining GaN at monolayer thickness with AlN barriers inside of a nanowire, deep ultraviolet LEDs are demonstrated. Full three-dimensional strain dependent energy band simulations are carried out within multiple quantum disk (MQD) GaN/AlN nanowire superlattice heterostructures. It is found that, even within the same nanowire MQD, the emission energy of the ultrathin GaN QDs varies from disk to disk due to the changing strain distribution and polarization charge induced energy band bending along the axial nanowire direction. MQD heterostructures are grown by plasma-assisted molecular beam epitaxy to form self-assembled catalyst-free nanowires with 1 to 2 monolayer thick GaNmore » insertions within an AlN matrix. Photoluminescence peaks are observed at 295 nm and 283 nm from the 2 ML and 1 ML thick MQD samples, respectively. Polarization-doped nanowire LEDs are grown incorporating 1 ML thick GaN MQD active regions from which we observe deep ultraviolet electroluminescence. As a result, the shortest LED wavelength peak observed is 240 nm and attributed to electron hole recombination within 1 ML thick GaN QDs.« less

  17. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

    SciTech Connect

    David, Aurelien

    2012-10-15

    Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop

  18. Enhanced functionality in GaN and SiC devices by using novel processing

    NASA Astrophysics Data System (ADS)

    Pearton, S. J.; Abernathy, C. R.; Gila, B. P.; Ren, F.; Zavada, J. M.; Park, Y. D.

    2004-11-01

    Some examples of recent advances in enhancing or adding functionality to GaN and SiC devices through the use of novel processing techniques are discussed. The first example is the use of ion implantation to incorporate transition metals such as Mn, Cr and Co at atomic percent levels in the wide bandgap semiconductors to produce room temperature ferromagnetism. A discussion is given of the phase space within which single-phase material can be obtained and the requirements for demonstrating the presence of a true dilute magnetic semiconductor. The ability to make GaN and SiC ferromagnetic leads to the possibility of magnetic devices with gain, spin FETs operating at low voltages and spin polarized light emitters. The second example is the use of novel oxides such as Sc 2O 3 and MgO as gate dielectrics or surface passivants on GaN. True inversion behavior has been demonstrated in gated MOS-GaN diodes with implanted n-regions supplying the minority carriers need for inversion. These oxide layers also effectively mitigate current collapse in AlGaN/GaN HEMTs through their passivation of surface states in the gate-drain region. The third example is the use of laser drilling to make through-wafer via holes in SiC, sapphire and GaN. The ablation rate is sufficiently high that this maskless, serial process appears capable of achieving similar throughput to the more conventional approach of plasma etching of vias. The fourth example is the use of either ungated AlGaN/GaN HEMTs or simple GaN and SiC Schottky diodes as sensors for chemicals, biogens, radiation, combustion gases or strain. The sensitivity of either the channel carrier density or the barrier height to changes in surface condition make these materials systems ideal for compact robust sensors capable of operating at elevated temperatures.

  19. A new system for sodium flux growth of bulk GaN. Part I: System development

    NASA Astrophysics Data System (ADS)

    Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Albrithen, Hamad; Suihkonen, Sami; Nakamura, Shuji; Speck, James S.

    2016-12-01

    Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The sodium flux method, which involves precipitation of GaN from a sodium-gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. We successfully developed a novel apparatus for conducting crystal growth of bulk GaN using the sodium flux method which has advantages with respect to prior reports. A key task was to prevent sodium loss or migration from the growth environment while permitting N2 to access the growing crystal. We accomplished this by implementing a reflux condensing stem along with a reusable capsule containing a hermetic seal. The reflux condensing stem also enabled direct monitoring of the melt temperature, which has not been previously reported for the sodium flux method. Furthermore, we identified and utilized molybdenum and the molybdenum alloy TZM as a material capable of directly containing the corrosive sodium-gallium melt. This allowed implementation of a crucible-free system, which may improve process control and potentially lower crystal impurity levels. Nucleation and growth of parasitic GaN (;PolyGaN;) on non-seed surfaces occurred in early designs. However, the addition of carbon in later designs suppressed PolyGaN formation and allowed growth of single crystal GaN. Growth rates for the (0001) Ga face (+c-plane) were up to 14 μm/h while X-ray omega rocking (ω-XRC) curve full width half-max values were 731″ for crystals grown using a later system design. Oxygen levels were high, >1019 atoms/cm3, possibly due to reactor cleaning and handling procedures.

  20. Spatial distribution of carrier concentration in un-doped GaN film grown on sapphire

    NASA Astrophysics Data System (ADS)

    Huang, Y.; Chen, X. D.; Beling, C. D.; Fung, S.; Ling, C. C.

    2004-03-01

    The depth and lateral dependent carrier concentration of un-intentionally doped GaN film grown on sapphire substrate have been studied by temperature-dependent Hall effect measurement, confocal micro-Raman spectroscopy and capacitance-voltage (C-V) measurements. The depth-dependent free carrier concentration extracted from the depth-profiled Raman spectra confirms a non-uniform spatial distribution of free carriers in the GaN film with a highly conductive layer of 1 m thickness near the GaN/sapphire boundary. The temperature dependent Hall data have been analyzed using two-layer model to extract the carrier concentration in the GaN bulk film and in the parallel conduction channel adjacent to the GaN/sapphire boundary. The carrier concentrations of the two layers derived from the Raman technique and the Hall measurements agree with each other. The lateral-dependent carrier concentration of the 2-inch GaN epitaxial wafer has also been studied by micro-Raman spectroscopy and C-V measurements. The line-shape fitting of the Raman A1(LO) coupled modes taken from horizontal lateral-different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data are compared well with a lateral-dependent carrier concentration map of the wafer revealed by C-V measurements. The study in the article indicates that Raman spectroscopy of the LO phonon-plasmon mode can be used as a nondestructive and reliable, in situ diagnostic for GaN wafer production.

  1. On the piezoelectric coupling constant of epitaxial Mg-doped GaN

    NASA Astrophysics Data System (ADS)

    Xu, X.; Woods, R. C.

    2010-07-01

    The electromechanical coupling coefficient ( k2) of an Mg-doped GaN epilayer has been evaluated by Lee et al. [IEEE Trans Electron Dev 2001;48:524-9] as (4.3 ± 0.3)%, which is much higher than those of other comparable III-V materials. As this is a surprising result, the present paper reports an independent determination of k2 from a similar Mg-doped GaN epilayer for comparison. A 2 μm thick Mg-doped GaN epilayer ((0 0 0 1) orientation) was grown on a c-plane sapphire substrate. The atomic concentration of Mg was 1.2 × 10 18/cm 3. Surface-acoustic wave (SAW) delay-line filters were fabricated using evaporated aluminium and "lift-off" techniques, and consisted of pairs of interdigital transducers (IDTs). Each IDT had 150 pairs of double-fingers. The SAW propagation direction in the sapphire substrate was [ 1¯ 1 0 0]. Acoustic wavelengths of 32 μm, 40 μm, 48 μm and 56 μm were used in the present work. The insertion loss of these filters was found to be more than 80 dB. This allows an upper bound of the electromechanical coupling coefficient ( k2) of the Mg-doped GaN epilayer to be calculated as 1 × 10 -4%. Our value, significantly lower than previously reported, shows that an Mg-doped GaN epilayer may not be such a promising material for SAW devices as appeared at first sight.

  2. Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process.

    PubMed

    Zettler, J K; Corfdir, P; Geelhaar, L; Riechert, H; Brandt, O; Fernández-Garrido, S

    2015-11-06

    We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires (NWs) on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN NW ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN NWs at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time.

  3. In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

    SciTech Connect

    Fernandez-Garrido, S.; Calleja, E.; Koblmueller, G.; Speck, J. S.

    2008-08-01

    Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.

  4. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    NASA Astrophysics Data System (ADS)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  5. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    SciTech Connect

    Sintonen, Sakari Suihkonen, Sami; Jussila, Henri; Tuomi, Turkka O.; Lipsanen, Harri; Rudziński, Mariusz; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas

    2014-08-28

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  6. The origin of yellow band emission and cathodoluminescence of Au-catalyzed wurtzite GaN nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, R. S.; Jiao, J. F.; Wu, X.

    2016-06-01

    GaN nanowires with large yield are directly synthesized by simply ammoniating the gallium oxide powders in the presence of ammonia gas at 1000 °C, under the assistance of Au nanocatalysts. The microstructure and crystallinity of as-synthesized GaN nanowires are well studied by using high-resolution transmission electron microscope (HRTEM) and some structural defects such as stacking faults are found in the GaN nano-crystal. Cathodoluminescence measurement shows that a strong near-band-edge (NBE) emission band centered at 384 nm and a broad yellow band in the range of 500-800 nm are observed. Finally, the growth mechanism and possible optical emission process of GaN nanowires are discussed.

  7. Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

    SciTech Connect

    Afroz Faria, Faiza; Guo Jia; Zhao Pei; Li Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; Xing Huili; Jena, Debdeep

    2012-07-16

    Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (<0.09 {Omega} mm) were obtained, with a minimum R{sub C} of 0.035 {Omega} mm on a sample with a room temperature carrier concentration of {approx}5 Multiplication-Sign 10{sup 19} cm{sup -3}. Based on the systematic study, the role of R{sub C} and R{sub sh} is discussed in the context of regrown n{sup +} GaN ohmic contacts for GaN based high electron mobility transistors.

  8. Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

    NASA Astrophysics Data System (ADS)

    Asahi, H.; Iwata, K.; Tampo, H.; Kuroiwa, R.; Hiroki, M.; Asami, K.; Nakamura, S.; Gonda, S.

    1999-05-01

    Polycrystalline GaN layers showing very strong photoluminescence (PL) intensities are successfully grown on amorphous fused silica (SiO 2) substrates by gas source molecular beam epitaxy (MBE) using an ion removed electron cyclotron resonance radical cell. The PL intensity is larger than that of undoped single crystalline GaN grown on sapphire by gas source MBE and is comparable to that of Si-doped single crystalline GaN grown on sapphire by metalorganic vapor-phase epitaxy at Nichia Chemical. The PL peak emission is considered to be excitonic. Undoped GaN layers grown on silica substrates exhibit n-type conduction and both n- and p-type conductions are achieved by impurity doping. These results open up the area of "Polycrystalline Semiconductor Photonics".

  9. Step-flow growth mode instability of N-polar GaN under N-excess

    SciTech Connect

    Chèze, C.

    2013-08-12

    GaN layers were grown on N-polar GaN substrates by plasma-assisted molecular beam epitaxy under different III/V ratios. Ga-rich conditions assure step-flow growth with atomically flat surface covered by doubly-bunched steps, as for Ga-polar GaN. Growth under N-excess however leads to an unstable step-flow morphology. Particularly, for substrates slightly miscut towards <1010>, interlacing fingers are covered by atomic steps pinned on both sides by small hexagonal pits. In contrast, a three-dimensional island morphology is observed on the Ga-polar equivalent sample. We attribute this result to lower diffusion barriers on N-polar compared to Ga-polar GaN under N-rich conditions.

  10. InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer.

    PubMed

    Hsu, Wei-Ju; Chen, Kuei-Ting; Huang, Wan-Chun; Wu, Chia-Jung; Dai, Jing-Jie; Chen, Sy-Hann; Lin, Chia-Feng

    2016-05-30

    A Si-heavy doped GaN:Si epitaxial layer is transformed into a directional nanopipe GaN layer through a laser-scribing process and a selectively electrochemical (EC) etching process. InGaN light-emitting diodes (LEDs) with an EC-treated nanopipe GaN layer have a high light extraction efficiency. The direction of the nanopipe structure was directed perpendicular to the laser scribing line and was guided by an external bias electric field. An InGaN LED structure with an embedded nanopipe GaN layer can enhance external quantum efficiency through a one-step epitaxial growth process and a selective EC etching process. A birefringence optical property and a low effective refractive index were observed in the directional-nanopipe GaN layer.

  11. Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates

    SciTech Connect

    Jasinski, J.; Liliental-Weber, Z.; Huang, D.; Reshchikov, M.A.; Yun, F.; Morkoc, H.; Sone, C.; Park, S.S.; Lee, K.Y.

    2002-04-30

    We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10{sup 6} cm{sup -2}). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 {+-} 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.

  12. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    SciTech Connect

    Takeuchi, S. Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.

    2015-12-28

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.

  13. Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

    SciTech Connect

    Romanyuk, O. Jiříček, P.; Bartoš, I.; Fernández-Garrido, S.; Geelhaar, L.; Brandt, O.; Paskova, T.

    2015-01-12

    We investigate GaN nanowire ensembles spontaneously formed in plasma-assisted molecular beam epitaxy by non-destructive low-energy electron diffraction (LEED) and x-ray photoelectron diffraction (XPD). We show that GaN nanowire ensembles prepared on AlN-buffered 6H-SiC(0001{sup ¯}) substrates with well-defined N polarity exhibit similar LEED intensity-voltage curves and angular distribution of photo-emitted electrons as N-polar free-standing GaN layers. Therefore, as in the case of GaN layers, LEED and XPD are found to be suitable techniques to assess the polarity of GaN nanowire ensembles on a macroscopic scale. The analysis of GaN nanowire ensembles prepared on bare Si(111) allows us to conclude that, on this non-polar substrate, the majority of nanowires is also N-polar.

  14. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    SciTech Connect

    Patsha, Avinash E-mail: dhara@igcar.gov.in; Dhara, Sandip; Tyagi, A. K.

    2015-09-21

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

  15. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperature reported for GaN based transistors, so far.

  16. Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor

    NASA Astrophysics Data System (ADS)

    Murakami, Hisashi; Takekawa, Nao; Shiono, Anna; Thieu, Quang Tu; Togashi, Rie; Kumagai, Yoshinao; Matsumoto, Koh; Koukitu, Akinori

    2016-12-01

    Tri-halide vapor phase epitaxy (THVPE) of thick GaN using GaCl3 was investigated for fabricating low-cost, high-crystalline-quality GaN substrates instead of the conventional manufacturing method of GaCl-based hydride vapor phase epitaxy (HVPE). The growth rate and upper growth temperature limit of GaN using THVPE were found to be much higher than those obtained using conventional HVPE under the same growth conditions. Drastic reduction in the number of dark spots measured by cathodoluminescence at room temperature was observed for the high-temperature-grown GaN layer on the (000-1) GaN/sapphire template due to the enhancement of precursor migration on the growing surface. It was found that the incorporation of impurities such as O, C, and Cl can be reduced even on the N-polarity GaN by increasing the growth temperature. The possibility of enlargement of the crystal diameter by growing the N-polarity GaN layer using THVPE was also proposed.

  17. Fabrication of well-aligned ZnO nanorods by hydrothermal process using GaN epitaxial layer

    NASA Astrophysics Data System (ADS)

    Jang, Jae-Min; Yi, Sung-Hak; Choi, Seung-Kyu; Kim, Jung-A.; Jung, Woo-Gwang

    2007-02-01

    One dimensional (1-D) ZnO nanorod structure of hexagonal shape was fabricated on epitaxial GaN layer by hydrothermal method. The growth of GaN epitaxial layer was carried out in a two-flow horizontal MOCVD reactor maintained at a pressure of 200 torr. Firstly, a 25 nm thick GaN buffer layer was grown at 520 °C. Then 2~3μm thick GaN epilayer was deposited at 1070 °C. Trimethylgallium (TMG) and NH 3 were used as Ga and N source, and H II gas was used as carrier gas. After the deposition of GaN epilayer thin-film, single crystalline ZnO nanorod was fabricated in aqueous solution. XRD and FE-SEM results showed ZnO nanorod arrays were oriented highly along the (002) plane. The ZnO nanorod was analyzed to have good quality crystallization by FE-TEM. The SAED pattern has shown that ZnO nanorod was grown in the direction along (002)-plane. Photoluminescence (PL) has shown that the GaN-ZnO hetero-structure has shown ultra-violet lasing action at room temperature. Narrow and strong ultra-violet peak was observed in comparison with PL result from epitaxial GaN layer. The analysis results have proved that aqueous solution growth method developed in the present work can be a good application for optical electronic device.

  18. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.

    SciTech Connect

    Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

    2005-12-01

    GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art

  19. Ground Albedo Neutron Sensing (GANS) method for measurements of soil moisture in cropped fields

    NASA Astrophysics Data System (ADS)

    Andres Rivera Villarreyes, Carlos; Baroni, Gabriele; Oswald, Sascha E.

    2013-04-01

    Measurement of soil moisture at the plot or hill-slope scale is an important link between local vadose zone hydrology and catchment hydrology. However, so far only few methods are on the way to close this gap between point measurements and remote sensing. This study evaluates the applicability of the Ground Albedo Neutron Sensing (GANS) for integral quantification of seasonal soil moisture in the root zone at the scale of a field or small watershed, making use of the crucial role of hydrogen as neutron moderator relative to other landscape materials. GANS measurements were performed at two locations in Germany under different vegetative situations and seasonal conditions. Ground albedo neutrons were measured at (i) a lowland Bornim farmland (Brandenburg) cropped with sunflower in 2011 and winter rye in 2012, and (ii) a mountainous farmland catchment (Schaefertal, Harz Mountains) since middle 2011. At both sites depth profiles of soil moisture were measured at several locations in parallel by frequency domain reflectometry (FDR) for comparison and calibration. Initially, calibration parameters derived from a previous study with corn cover were tested under sunflower and winter rye periods at the same farmland. GANS soil moisture based on these parameters showed a large discrepancy compared to classical soil moisture measurements. Therefore, two new calibration approaches and four different ways of integration the soil moisture profile to an integral value for GANS were evaluated in this study. This included different sets of calibration parameters based on different growing periods of sunflower. New calibration parameters showed a good agreement with FDR network during sunflower period (RMSE = 0.023 m3 m-3), but they underestimated soil moisture in the winter rye period. The GANS approach resulted to be highly affected by temporal changes of biomass and crop types which suggest the need of neutron corrections for long-term observations with crop rotation. Finally

  20. High-quality GaN films obtained by air-bridged lateral epitaxial growth

    NASA Astrophysics Data System (ADS)

    Ishibashi, Akihiko; Kidoguchi, Isao; Sugahara, Gaku; Ban, Yuzaburoh

    2000-12-01

    High-quality GaN films with low dislocation density and low wing tilt of c-axis orientation have been successfully obtained by a promising technique of selected area growth, namely air-bridged lateral epitaxial growth (ABLEG). A GaN film was grown from the exposed (0 0 0 1) top facet of the ridged GaN seed structures, whose side walls and etched bottoms were covered with silicon nitride mask, using low-pressure metalorganic vapor-phase epitaxy. The ridge-stripe structures of the GaN seed were constructed in the 1 1¯00 GaN direction. At the optimum growth temperature of 950°C, only the 1 1 2¯ 0 and {0 0 0 1} facets were obtained. Continuing the growth led to fabricating the air-bridged structure, where the coalescence of the wing region occurred. From the transmission electron microscopy study, it was found that most of the vertical dislocations along the c-axis were confined to the seed region, while the horizontal dislocations were newly generated in the vicinity of coalescence boundary. The densities of the vertical dislocations were about 9×10 8 cm -2 in the seed region, while below 1×10 6 cm -2 in other regions. The densities of the horizontal dislocations were about 1×10 6 cm -2 in the wing region and 4×10 7 cm -2 in the vicinity of the coalescence boundary, respectively. The X-ray diffraction (XRD) measurements revealed that the tilt angle of c-axis relative to underlying seed GaN was about 297 arcsec (0.083°), and the full-width at half-maximum of the XRD curve for the wing region was 138 arcsec, indicating that the wing region has high uniformity of c-axis orientation. Both of the wing and the coalescence boundary region exhibited atomically smooth surfaces with stepped terraces, whose root mean square roughness was found to be 0.089 nm by atomic force microscopy measurements.

  1. Coating MCPs with AlN and GaN

    NASA Technical Reports Server (NTRS)

    Bensaoula, Abdelhakim; Starikov, David; Boney, Chris

    2006-01-01

    A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N

  2. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.

    PubMed

    Yu, Ing-Song; Chang, Chun-Pu; Yang, Chung-Pei; Lin, Chun-Ting; Ma, Yuan-Ron; Chen, Chun-Chi

    2014-01-01

    In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.

  3. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

    PubMed Central

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-01-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates. PMID:27101930

  4. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

    SciTech Connect

    Lin, Zhiyu; Zhang, Jincheng Xu, Shengrui; Chen, Zhibin; Yang, Shuangyong; Tian, Kun; Hao, Yue; Su, Xujun; Shi, Xuefang

    2014-08-25

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

  5. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect

    Hodges, C. Pomeroy, J.; Kuball, M.

    2014-02-14

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  6. Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy.

    PubMed

    Fernández-Garrido, Sergio; Kaganer, Vladimir M; Sabelfeld, Karl K; Gotschke, Tobias; Grandal, Javier; Calleja, Enrique; Geelhaar, Lutz; Brandt, Oliver

    2013-07-10

    We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for both the diffusion of Ga adatoms along the side facets toward the nanowire tip and the finite amount of active N available for the growth. The model explains the formation of a new equilibrium nanowire radius after increasing the Ga flux and provides an explanation for two well-known but so far not understood experimental facts: the necessity of effectively N-rich conditions for the spontaneous growth of GaN nanowires and the increase in nanowire radius with increasing III/V flux ratio.

  7. High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

    NASA Astrophysics Data System (ADS)

    Shekari, L.; Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z.

    2012-12-01

    Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

  8. Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

    NASA Technical Reports Server (NTRS)

    Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

    2012-01-01

    This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

  9. Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

    PubMed Central

    Ho, V. X.; Dao, T. V.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.; McGill, S. A.; Vinh, N. Q.

    2017-01-01

    We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 μm upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN:Er epilayers as an optical gain medium at 1.54 μm. PMID:28054672

  10. Electron and hole stability in GaN and ZnO.

    PubMed

    Walsh, Aron; Catlow, C Richard A; Miskufova, Martina; Sokol, Alexey A

    2011-08-24

    We assess the thermodynamic doping limits of GaN and ZnO on the basis of point defect calculations performed using the embedded cluster approach and employing a hybrid non-local density functional for the quantum mechanical region. Within this approach we have calculated a staggered (type-II) valence band alignment between the two materials, with the N 2p states contributing to the lower ionization potential of GaN. With respect to the stability of free electron and hole carriers, redox reactions resulting in charge compensation by ionic defects are found to be largely endothermic (unfavourable) for electrons and exothermic (favourable) for holes, which is consistent with the efficacy of electron conduction in these materials. Approaches for overcoming these fundamental thermodynamic limits are discussed.

  11. Atomistic Simulation of the Size and Orientation Dependences of Thermal Conductivity in GaN Nanowires

    SciTech Connect

    Wang, Zhiguo; Zu, Xiaotao; Gao, Fei; Weber, William J.; Crocombette, J.-P.

    2007-04-16

    The thermal conductivity of GaN nanowires has been determined computationally, by applying nonequilibrium atomistic simulation methods using the Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] potentials. The simulation results show that the thermal conductivity of the GaN nanowires is smaller than that of a bulk crystal and increases with increasing diameter. Surface scattering of phonons and the high surface to volume ratios of the nanowires are primarily responsible for the reduced thermal conductivity and its size dependence behavior. The thermal conductivity is also found to decrease with increasing temperature, which is due to phonon-phonon interactions at high temperatures. The thermal conductivity also exhibits a dependence on axial orientation of the nanowires.

  12. Chemical etching behavior of non-polar GaN sidewalls

    NASA Astrophysics Data System (ADS)

    Jung, Younghun; Jang, Soohwan; Baik, Kwang Hyeon; Kim, Hong-Yeol; Kim, Jihyun

    2016-12-01

    Wet-chemical etching of non-polar GaN films can be applied to form textured surfaces that enhance light extraction efficiency in light-emitting diodes. The etch-induced shapes (trigonal prisms) on the sidewalls of concave and convex mesa patterns defined on a-plane GaN films exhibited an alignment towards the [000 1 ̅] direction. An etch-rate vector model that includes one fast etching direction and two etching directions normal to the fast direction was developed to explain the creation of the etch-induced trigonal prisms. The large lattice parameter along with [000 1 ̅] and single dangling bond of a-plane surface supply enough space for attack of OH- ions, which is confirmed by XPS analysis that indicates the increased hydroxide spectra on a-plane after KOH etching and these are the reason for different etch rate and formation of trigonal prisms.

  13. Rapid Thermal Processing of Implanted GaN up to 1500 Degree C

    SciTech Connect

    Cao, X.A.; Pearton, S.J.; Singh, R.K.; Abernathy, C.R.; Han, J.; Shul, R.J.; Rieger, D.J.; Zolper, J.C.; Wilson, R.G.; Fu, M.; Sekhar, J.A.; Guo, H.J.; Pennycook, S.J.

    1999-01-27

    GaN implanted with donor (Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are {le}2 x 10{sup {minus}13} cm{sup 2} {center_dot} s{sup {minus}1} at 1400 C, except Be, which displays damage-enhanced diffusion at 900 C and is immobile once the point defect concentration is removed. Activation efficiency of {approximately}90% is obtained for Si at 1400 C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 C compared to previous results at 1100 C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.

  14. Migration mechanism of a GaN bicrystalline grain boundary as a model system

    PubMed Central

    Lee, Sung Bo; Yoo, Seung Jo; Kim, Young-Min; Kim, Jin-Gyu; Han, Heung Nam

    2016-01-01

    Using in situ high-resolution transmission electron microscopy, we have explored migration mechanism of a grain boundary in a GaN bicrystal as a model system. During annealing at 500 °C, the grain-boundary region underwent a decrease in thickness, which occurred by decomposition or sublimation of GaN during annealing at 500 °C coupled with electron-beam sputtering. The decrease in thickness corresponds to an increase in the driving force for migration, because the migration of the grain boundary was driven by the surface energy difference. As the driving force increased with annealing time, the grain-boundary morphology turned from atomically smooth to rough, which is characterized by kinetic roughening. The observations indicate that a grain boundary exhibits a nonlinear relationship between driving force for migration and migration velocity, in discord with the general presumption that a grain boundary follows a linear relationship. PMID:27210538

  15. Unraveling the strain state of GaN down to single nanowires

    NASA Astrophysics Data System (ADS)

    Auzelle, Thomas; Biquard, Xavier; Bellet-Amalric, Edith; Fang, Zhihua; Roussel, Hervé; Cros, Ana; Daudin, Bruno

    2016-12-01

    GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaN NW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain—defined as [c /a -(c/a ) o]/(c/a ) o —within the experimental accuracy amounting to 1.25 × 10-4. However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substrates. It is concluded that at the scale of the single NW, the free surface and the residual doping do not generate a significant strain and only coalescence does.

  16. Tri-Gate Normally-Off GaN Power MISFET

    SciTech Connect

    Lu, B; Matioli, E; Palacios, T

    2012-03-01

    We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 mu A/mm and V-gs = 0. The new device has an on/off current ratio of more than eight orders of magnitude and a subthreshold slope of 86 +/- 9 mV/decade. The threshold voltage of the new device is 0.80 +/- 0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.

  17. High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

    NASA Astrophysics Data System (ADS)

    Vico Triviño, N.; Rossbach, G.; Dharanipathy, U.; Levrat, J.; Castiglia, A.; Carlin, J.-F.; Atlasov, K. A.; Butté, R.; Houdré, R.; Grandjean, N.

    2012-02-01

    We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and usual dry etching techniques. The membrane was released by underetching the Si (111) substrate. Micro-photoluminescence measurements performed at low temperature exhibit a quality factor as high as 5200 at ˜420 nm, a value suitable to expand cavity quantum electrodynamics to the near UV and the visible range and to develop nanophotonic platforms for biofluorescence spectroscopy.

  18. GaN HFET-Based DC/DC Converters for Low Power RF Satellite Equipment

    NASA Astrophysics Data System (ADS)

    Delamare, Guillaume; Maynadier, Paul; Schneider, Henri

    2014-08-01

    This paper presents the evaluation and prototyping of a low power, multiple outputs, isolated DC/DC converter for 100 V telecom satellite applications, using enhancement-mode GaN heterostructure field effect transistors (HFETs) to enable 1 MHz switching frequencies.Radiation-hardened power MOSFETs are currently the main drivers for both cost and size (because of their limited switching frequency) of existing DC/DC converters. Commercially available normally-off GaN HFETs are very promising replacements, thanks to their high switching speed and intrinsic radiation hardness.In this study different designs, built around various isolated topologies, were compared for a typical low power RF application (10W) with a switching frequency of 1 MHz. Calculations and simulations helped select the most adequate architecture in terms of size and efficiency. A prototype was then built and its performance measured. Electromagnetic compatibility was evaluated by mating the power supply to its RF equipment.

  19. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH3:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes—unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting—were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE—both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  20. Charge transfer in Fe-doped GaN: The role of the donor

    SciTech Connect

    Sunay, Ustun; Dashdorj, J.; Zvanut, M. E.; Harrison, J. G.; Leach, J. H.; Udwary, K.

    2014-02-21

    Several nitride-based device structures would benefit from the availability of high quality, large-area, freestanding semi-insulating GaN substrates. Due to the intrinsic n-type nature of GaN, however, the incorporation of compensating centers such as Fe is necessary to achieve the high resistivity required. We are using electron paramagnetic resonance (EPR) to explore charge transfer in 450 um thick GaN:Fe plates to understand the basic mechanisms related to compensation so that the material may be optimized for device applications. The results suggest that the simple model based on one shallow donor and a single Fe level is insufficient to describe compensation. Rather, the observation of the neutral donor and Fe3+ indicates that either the two species are spatially segregated or additional compensating and donor defects must be present.