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Sample records for 193nm immersion lithography

  1. High index fluoride materials for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Nawata, T.; Inui, Y.; Masada, I.; Nishijima, E.; Satoh, H.; Fukuda, T.

    2006-03-01

    We tried to investigate various kinds of metal fluoride materials which have higher gravity than CaF II and cubic crystal system, and we found out barium lithium fluoride (BaLiF 3) and potassium yttrium fluoride (KY 3F 10) as candidates for the last lens material. We have developed unique Czochralski (CZ) machines and techniques for the growth of large calcium fluoride single crystals. And we applied these technologies to the growth of fluoride high index materials. We have succeeded to grow the large BaLiF 3 single crystal with 120mm in diameter and a KY 3F 10 single crystal, and measured their basic properties such as refractive index, VUV transmittance, birefringence, and so on. As a result of our basic research, we found out that BaLiF 3 single crystal is transparent at VUV region, and the refractive index at 193nm is 1.64, and KY 3F 10 single crystal has the index of 1.59 at the wavelength of 193nm which is slightly higher than fused silica. We expect that these fluoride high index materials are useful for the last lens material of the next generation immersion lithography.

  2. Customized illumination shapes for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ling, Moh Lung; Chua, Gek Soon; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2008-03-01

    In this paper, a study on customized illumination shape configurations as resolution enhancement for 45nm technology node will be presented. Several new source shape configurations will be explored through simulation based on 193nm immersion lithography on 6% Attenuated Phase Shift Mask. Forbidden pitch effect is commonly encountered in the application of off axis illumination (OAI). The illumination settings are often optimized to allow maximum process window for a pitch. This is done by creating symmetrical distribution of diffraction order on the pupil plane. However, at other pitch, the distribution of diffraction order on the pupil plane results in severe degradation in image contrast and results in significant critical dimension (CD) fluctuation. The problematic pitch is often known as forbidden pitch. It has to be avoided in the design and thus limited the pitch range to be imaged for particular illumination. An approach to modify off axis illumination to minimize the effect of forbidden pitch is explored in this study. The new customized shape for one dimensional line and space pattern is modified from current off axis illumination. Simulation study is done to evaluate the performance some customized shapes. The extent of CD fluctuation and CD through pitch uniformity is analyzed to determine the performance enhancement of the new illumination shapes. From simulation result, the proposed modification have significantly improved the through pitch performance and minimized the effect of forbidden pitch.

  3. Development of fluoropolymer for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Shirota, Naoko; Takebe, Yoko; Sasaki, Takashi; Yokokoji, Osamu; Toriumi, Minoru; Masuhara, Hiroshi

    2006-03-01

    We had already developed several series of fluoropolymers, FPRs and FUGUs, having a partially fluorinated monocyclic structure and having acidic hydroxyl group, which acts as dissolution unit into alkaline solution. Then we have optimized these polymers for top-coat as the developer-soluble type in the 193nm immersion lithography. However the hydrophobicity of these polymers were a little poor due to its hydroxyl group. So we thought that the introduction of water repellent moiety into the these polymers structure is effective to improve the their hydrophobicity though the increase of water repellent unit in the polymer leads to lower dissolution rate in developer. To introduce as much as possible of hydrophobicity unit, we selected FUGU as platform, which has larger dissolution rate in developer than that of FPRs, We copolymerized FUGU with higher water-repellent component and obtained three copolymers, FUGU-CoA, FUGU-CoB, and FUGU-CoC. In this paper, we described characteristics and evaluation of these polymers. Most of these polymer showed an improvement of hydrophobicity, in particular FUGU-CoB had excellent hydrophobicity due to introduction bulky containing-fluorine group. In this study, we also investigated the interaction between the water and various polymers by using QCM method. The difference between FUGU and water repellent polymers for swelling behavior to water became clear by analysis of diffusion coefficient. We found that our new co-polymers have excellent diffusion coefficient than FUGU which was confirmed by QCM method used to evaluate water permeability and water diffusion in the materials.

  4. Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Yamashita, T.; Ishikawa, T.; Yoshida, T.; Hayamai, T.; Araki, Takayuki; Aoyama, H.; Hagiwara, T.; Itani, Toshiro; Fujii, Kiyoshi

    2005-05-01

    Various fluorinated polymers were synthesized for application in 193-nm immersion lithography with the goal of improving 157-nm photoresist performance. Their fundamental properties were characterized, such as transparency at 193-nm and 157-nm (wavelength) and solubility in water and a standard alkaline developer. High transparency, i.e., absorbance better than 0.3 μm-1 at 193-nm wavelength, was achieved. The dissolution behaviors of them were studied by using the Quartz Crystal Microbalance (QCM) method. We find that the dissolution rate of Poly(norbornene-2-fluoro-2-hexafluoroalchol) (PNB1FVIP) in 0.065N tetramethylammonium hydroxide (TMAH) was >200 times (nm/s) faster than that of the copolymer of tetrafluoroethylene (TFE) and norbornene-2-fluoro-2-hexafluoroalchol (TFE/NB1FVIP). A resist based on TFE/NB1FVIP was able to delineate 75 nm dense lines by exposure at 193-nm (wavelength) with an alternating phase shift mask using a 0.75 NA ArF scanner. The dissolution rates of the fluoropolymers in water and a 0.262N and 0.065 TMAH can be controlled by optimizing counter monomers containing hexafluoroisopropanol (HFA) unit, carboxylic acid unit and so on. In addition, we have collect water contact angle data. This data shows that fluoropolymers can be used as resist cover materials for 193-nm immersion lithography.

  5. Impact of water and top-coats on lithographic performance in 193-nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Kishimura, Shinji; Gronheid, Roel; Ercken, Monique; Maenhoudt, Mireille; Matsuo, Takahiro; Endo, Masayuki; Sasago, Masaru

    2005-05-01

    We have investigated the impact of water and top-coats on the resist in water immersion lithography by analyzing the dissolution behavior and the film constitution. We used a resist development analyzer (RDA) and a quartz crystal microbalance (QCM) to study the dissolution behavior. The film constitution was studied through the gradient shaving preparation (GSP) method in combination with TOF-SIMS. The GSP/TOF-SIMS method reveals the constitution of a top-coat/resist film. We found that, in a resist, the photo acid generator (PAG) anion at a depth of about 30 nm from the surface leached into water and a surface insoluble layer formed during immersion. The estimated amount of leaching was about 5% of the original content. The formation of an intermixing layer with a low dissolution rate was observed for some top-coat and resist combinations. The thickness of the intermixing layer and the formation behavior were made clear. We believe the intermixing layer was caused by the top-coat solvent eluting resist components. In a top-coat, a PAG existed within the top-coat and the PAG anion leached into the water. Top-coats blocked gaseous decomposed products from the resist film during PEB. These results are useful for estimating patterning characteristics and the defectivity due to materials for actual immersion exposure.

  6. New antireflective coatings for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Xu, Gu; Guerrero, Douglas J.; Dobson, Norman

    1998-06-01

    New bottom antireflective coatings (BARCs) for 193 nm lithography have been recently developed by Brewer Science Inc. Copolymers of benzyl methacrylate (or benzyl acrylate) and hydroxypropyl methacrylate have been synthesized and used as a main component in 193 nm BARCs. The acrylic copolymers have strong absorbance at 193 nm UV light wavelength. The 193 nm BARCs were formulated in safe solvents such as ethyl lactate and formed by spin-on coating process. Thermosetting of the 193 nm BARCs limited their intermixing with photoresists. These 193 nm BARCs had optical density of about 10 micrometers -1, k equals 0.35, and n equals 1.81. Preliminary oxygen plasma etch rates were > 1.5 times DUV resists. Good profiles at small feature sizes (< 0.20 micrometers ) were achieved with tested photoresists.

  7. Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Shirakawa, Michihiro; Inoue, Naoki; Furutani, Hajime; Yamamoto, Kei; Goto, Akiyoshi; Fujita, Mitsuhiro

    2015-03-01

    Two approaches which achieve the further evolution of NTD (Negative Tone Development) process are shown in this article. One is ACCEL (Advanced Chemical Contrast Enhancement Layer) process that can improve the lithography performance and the other is DTD (Dual Tone Development) process that can shrink patterning pitch below the limit of single exposure process. ACCEL is an additionally provided layer which is coated on a surface of NTD resist film before exposure and removed by NTD developer. ACCEL can enhance the acid distribution and dissolution contrast of the NTD resist. In fact, lithography performances such as exposure latitude (EL) and DOF improved dramatically by applying ACCEL compared to the NTD resist without ACCEL. We consider that suppression of excessive acid diffusion and material transfer between the resist layer and the ACCEL layer are the causes of the contrast enhancement. DTD process is one of the simplest pitch shrink method which is achieved by repeating PTD and NTD process. Feasibility study of DTD patterning has been demonstrated so far. However, Exposure latitude margin and CDU performance were not sufficient for applying DTD to HVM. We developed the novel DTD specific resist under a new concept, and 32 nm half pitch (hp) contact hole (CH) pattern was successfully formed with enough margins. DTD line and space (L/S) patterning are also demonstrated and 24 nm hp L/S pattern can be resolved. k1 factors of DTD CH and L/S patterns reach to 0.20 and 0.15, respectively.

  8. Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Meador, James D.; Beaman, Carol; Stroud, Charlyn; Lowes, Joyce A.; Zhu, Zhimin; Guerrero, Douglas J.; Mercado, Ramil-Marcelo L.; Drain, David

    2008-03-01

    A family of dye-filled developer-soluble bottom anti-reflective coatings (BARCs) has been developed for use in 193-nm microlithography. This new dye-filled chemical platform easily provides products covering a wide range of optical properties. The light-sensitive and positive-working BARCs use a transparent polymeric binder and a polymeric dye in a thermally crosslinking formulation, with the cured products then being photochemically decrosslinked prior to development. The cured BARC films are imaged and removed with developer in the same steps as the covering photoresist. Two dye-filled BARCs with differing optical properties were developed via a series of DOEs and then used as a dual-layer BARC stack. Lithography with this BARC stack, using a 193-nm resist, gave 150-nm L/S (1:1). A 193-nm dual-layer BARC stack (gradient optical properties) from the well-established dye-attached family of light-sensitive BARCs also gave 150-nm L/S (1:1) with the same resist. However, the latter provided much improved line shape with no scumming. The targeted application for light-sensitive dual-layer BARCs is high-numerical aperture (NA) immersion lithography where a single-layer BARC will not afford the requisite reflection control.

  9. Excimer lasers for superhigh NA 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Paetzel, Rainer; Albrecht, Hans S.; Lokai, Peter; Zschocke, Wolfgang; Schmidt, Thomas; Bragin, Igor; Schroeder, Thomas; Reusch, Christian; Spratte, Stefan

    2003-06-01

    Excimer lasers are widely used as the light source for microlithography scanners. The volume shipment of scanner systems using 193nm is projected to begin in year 2003. Such tools will directly start with super high numerical aperture (NA) in order to take full advantage of the 193nm wavelength over the advanced 248nm systems. Reliable high repetition rate laser light sources enabling high illumination power and wafer throughput are one of the fundamental prerequisites. In addition these light sources must support a very high NA imaging lens of more than 0.8 which determines the output spectrum of the laser to be less than 0.30 pm FWHM. In this paper we report on our recent progress in the development of high repetition rate ultra-narrow band lasers for high NA 193nm microlithography scanners. The laser, NovaLine A4003, is based on a Single Oscillator Ultral Line-narrowed (SOUL) design which yields a bandwidth of less than 0.30pm FWHM. The SOUL laser enables superior optical performance without adding complexity or cost up to the 4 kHz maximum repetition rate. The A4003's high precision line-narrowing optics used in combination with the high repetition rate of 4 kHz yields an output power of 20 W at an extremely narrow spectral bandwidth of less than 0.30 pm FWHM and highest spectral purity of less than 0.75 pm for the 95% energy content. We present performance and reliability data and discuss the key laser parameters. Improvements in the laser-internal metrology and faster regulation control result in better energy stability and improved overall operation behavior. The design considerations for line narrowing and stable laser operation at high repetition rates are discussed.

  10. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  11. Chemical trimming overcoat: an enhancing composition and process for 193nm lithography

    NASA Astrophysics Data System (ADS)

    Liu, Cong; Rowell, Kevin; Joesten, Lori; Baranowski, Paul; Kaur, Irvinder; Huang, Wanyi; Leonard, JoAnne; Jeong, Hae-Mi; Im, Kwang-Hwyi; Estelle, Tom; Cutler, Charlotte; Pohlers, Gerd; Yin, Wenyan; Fallon, Patricia; Li, Mingqi; Jeon, Hyun; Xu, Cheng Bai; Trefonas, Pete

    2016-03-01

    As the critical dimension of devices is approaching the resolution limit of 193nm photo lithography, multiple patterning processes have been developed to print smaller CD and pitch. Multiple patterning and other advanced lithographic processes often require the formation of isolated features such as lines or posts by direct lithographic printing. The formation of isolated features with an acceptable process window, however, can pose a challenge as a result of poor aerial image contrast at defocus. Herein we report a novel Chemical Trimming Overcoat (CTO) as an extra step after lithography that allows us to achieve smaller feature size and better process window.

  12. Inspection of advanced computational lithography logic reticles using a 193-nm inspection system

    NASA Astrophysics Data System (ADS)

    Yu, Ching-Fang; Lin, Mei-Chun; Lai, Mei-Tsu; Hsu, Luke T. H.; Chin, Angus; Lee, S. C.; Yen, Anthony; Wang, Jim; Chen, Ellison; Wu, David; Broadbent, William H.; Huang, William; Zhu, Zinggang

    2010-09-01

    We report inspection results of early 22-nm logic reticles designed with both conventional and computational lithography methods. Inspection is performed using a state-of-the-art 193-nm reticle inspection system in the reticleplane inspection mode (RPI) where both rule-based sensitivity control (RSC) and a newer modelbased sensitivity control (MSC) method are tested. The evaluation includes defect detection performance using several special test reticles designed with both conventional and computational lithography methods; the reticles contain a variety of programmed critical defects which are measured based on wafer print impact. Also included are inspection results from several full-field product reticles designed with both conventional and computational lithography methods to determine if low nuisance-defect counts can be achieved. These early reticles are largely single-die and all inspections are performed in the die-to-database inspection mode only.

  13. Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography

    NASA Astrophysics Data System (ADS)

    Krysak, Marie; Trikeriotis, Markos; Schwartz, Evan; Lafferty, Neal; Xie, Peng; Smith, Bruce; Zimmerman, Paul; Montgomery, Warren; Giannelis, Emmanuel; Ober, Christopher K.

    2011-04-01

    We have developed a transparent, high refractive index inorganic photoresist with significantly higher etch resistance than even the most robust polymeric resist. As feature sizes continue to decrease, film thickness must be reduced in order to prevent pattern collapse. Normally thinner films prevent sufficient pattern transfer during the etch process, creating the need for a hardmask, thus increasing production cost. Compared to PHOST, we have shown over 10 times better etch resistance. Organic photo-crosslinkable ligands have been attached to a hafnium oxide nanoparticle core to create an imageable photoresist. This resist has shown superior resolution with both E-beam and 193 nm lithography, producing sub-50 nm patterns. In addition to improved etch resistance, the inorganic photoresist exhibits a high refractive index, increasing the depth of focus (DOF). The nanoparticle size of ~ 1-2 nm has the potential to reduce line edge roughness (LER).

  14. Research development of thermal aberration in 193nm lithography exposure system

    NASA Astrophysics Data System (ADS)

    Wang, Yueqiang; Liu, Yong

    2014-08-01

    Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies.

  15. Simulations of immersion lithography

    NASA Astrophysics Data System (ADS)

    Bai, Min; Lei, Junjiang; Zhang, Lin; Shiely, James P.

    2005-05-01

    Immersion lithography has been regarded as the most viable contender to extend the resolution capability of optical lithography using 193nm wavelength. In parallel with the tremendous effort of overcoming the engineering challenges in immersion, support from modeling and simulations is strongly needed. Although immersion simulation has become available through a number of simulation tools, we need to investigate the model generation and its compatibility within the context of full-chip optical proximity correction (OPC). In this paper, we will describe the physics of a full vector model that is necessary for the high NA optical modeling under immersion. In this full vector model, we consider not only the plane wave decomposition as light travels from the mask to wafer plane, but also the refraction, transmission and reflection of light through a thin film stack on the wafer. We integrated this comprehensive vector model into Synopsys OPC modeling tool ProGen. Through ProGen simulation results, we will discuss several important merits of immersion lithography, as well as the full portability of immersion models into OPC process flow.

  16. CD-SEM measurement line-edge roughness test patterns for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin D.; Bishop, Michael; Villarrubia, John S.; Vladar, Andras E.

    2003-05-01

    The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 ITRS roadmap. The Advanced Metrology Advisory Group (AMAG, a council composed of the chief CD-metrologists from the International SEMATECH consortium's Member Companies and from the National Institute of Standards and Technology, NIST) has begun a project to investigate this issue and to direct the CD-SEM supplier community towards a semiconductor industry-backed solution for implementation. The AMAG group has designed and built a 193 nm reticle that includes structures implementing a number of schemes to intentionally cause line edge roughness of various spatial frequencies and amplitudes. The lithography of these structures is in itself of interest to the litho-metrology community and will be discussed here. Measurements on different CD-SEMs of major suppliers will be used to comparatively demonstrate the current state of LER measurement. These measurements are compared to roughness determined off-line by analysis of top-down images from these tools. While no official standard measurement algorithm or definition of LER measurement exists, definitions used in this work are presented and compared in use. Repeatability of the measurements and factors affecting their accuracy will be explored, as well as how CD-SEM parameters can effect the measurements.

  17. CD-SEM measurement line edge roughness test patterns for 193 nm lithography

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin D.; Bishop, Michael; Villarrubia, John S.; Vladar, Andras E.

    2003-07-01

    The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS) roadmap. The Advanced Metrology Advisory Group (AMAG, a council composed of the chief metrologists from the International SEMATECH (ISMT) consortium"s Member Companies and from the National Institute of Standards and Technology (NIST) has begun a project to investigate this issue and to direct the critical dimension scanning electron microscope (CD-SEM) supplier community towards a semiconductor industry-backed solution for implementation. The AMAG group has designed and built a 193 nm reticle that includes structures implementing a number of schemes to intentionally cause line edge roughness of various spatial frequencies and amplitudes. The lithography of these structures is in itself of interest to the litho-metrology community and will be discussed here. These structures, along with several other photolithography process variables, have been used to fabricate a set of features of varying roughness value and structure which span the LER process space of interest. These references are, in turn, useful for evaluation of LER measurement capability. Measurements on different CD-SEMs of major suppliers were used to demonstrate the current state of LER measurement. These measurements were compared to roughness determined off-line by analysis of top-down images from these tools. While no official standard measurement algorithm or definition of LER measurement exists, definitions used in this work are presented and compared in use. Repeatability of the measurements and factors affecting their accuracy were explored, as well as how CD-SEM parameters can affect the measurements.

  18. Top-coatless 193nm positive-tone development immersion resist for logic application

    NASA Astrophysics Data System (ADS)

    Liu, Lian Cong; Yeh, Tsung Ju; Lin, Yeh-Sheng; Huang, Yu Chin; Kuo, Chien Wen; Huang, Wen Liang; Lin, Chia Hung; Yu, Chun Chi; Hsu, Ray; Wan, I.-Yuan; Lin, Jeff; Im, Kwang-Hwyi; Lim, Hae Jin; Jeon, Hyun K.; Suzuki, Yasuhiro; Xu, Cheng Bai

    2015-03-01

    In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.

  19. Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning

    NASA Astrophysics Data System (ADS)

    Chiu, M. C.; Lin, Benjamin Szu-Min; Tsai, M. F.; Chang, Y. S.; Yeh, M. H.; Ying, T. H.; Ngai, Chris; Jin, Jaklyn; Yuen, Stephen; Huang, Sem; Chen, Yongmei; Miao, Liyan; Tai, Kevin; Conley, Amiad; Liu, Ian

    2008-11-01

    High NA (1.35) Immersion litho runs into the fundamental limit of printing at 40-45nm half pitch (HP). The next generation EUVL tool is known to be ready not until year 2012. Double patterning (DP) technology has been identified as the extension of optical photolithography technologies to 3xnm and 2xnm half-pitch for the low k1 regime to fill in the gap between Immersion lithography and EUVL. Self Aligned Double Patterning (SADP) Technology utilized mature process technology to reduce risk and faster time to market to support the continuation of Moore's Law of Scaling to reduce the cost/function. SADP uses spacer to do the pitch splitting bypass the conventional double patterning (e.g. Litho-Freeze-Litho-Etch (LFLE), or Litho-Etch-Litho-Etch (LELE)) overlay problem. Having a tight overlay performance is extremely critical for NAND Flash manufacturers to achieve a fast yield ramp in production. This paper describes the challenges and accomplishment of a Line-By-Spacer (LBS) SADP scheme to pattern the 29nm half-pitch NAND Flash STI application. A 193nm Dry lithography was chosen to pattern on top of the amorphous carbon (a-C) film stack. The resist pattern will be transferred on the top a-C core layer follow by spacer deposition and etch to achieve the pitch splitting. Then the spacer will be used to transfer to the bottom a-C universal hardmask. This high selectivity a-C hardmask will be used to transfer the 29nm half-pitch pattern to the STI. Good within wafer CD uniformity (CDU) <2nm and line width roughness (LWR) <2nm for the 29nm half-pitch NAND FLASH STI were demonstrated as the benefits using double amorphous carbon hardmask layers. The relationships among the photoresist CDs, CD trimming , as-deposited spacer film thickness, spacer width and the final STI line/core space/gap space CDs will also be discussed in this paper since patterning is combining both lithography performance with CVD and Etch process performance. Film selection for amorphous carbon and

  20. Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

    SciTech Connect

    Rao, V.; Hutchinson, J.; Holl, S.; Langston, J.; Henderson, C.; Wheeler, D.R.; Cardinale, G.; OConnell, D.; Goldsmith, J.; Bohland, J.; Taylor, G.; Sinta, R.

    1998-11-01

    The maturity and acceptance of top surface imaging (TSI) technology have been hampered by several factors including inadequate resist sensitivity and line edge roughness. We have found that the use of a chemically amplified resist can improve the sensitivity in these systems by 1.5{endash} 2{times} without compromising the line edge roughness. In addition, we have shown improved line edge roughness by increasing the molecular weight of the polymeric resin in the resist. Using these materials approaches, we have been able to show excellent resolution images with the TSI process for both 193 nm and extreme ultraviolet (13.4 nm) patterning. {copyright} {ital 1998 American Vacuum Society.}

  1. Double-exposure materials for pitch division with 193nm lithography: requirements, results

    NASA Astrophysics Data System (ADS)

    Bristol, Robert; Shykind, David; Kim, Sungwon; Borodovsky, Yan; Schwartz, Evan; Turner, Courtney; Masson, Georgeta; Min, Ke; Esswein, Katherine; Blackwell, James M.; Suetin, Nikolay

    2009-03-01

    We present the results of both theoretical and experimental investigations of materials for application either as a reversible Contrast Enhancement Layer (rCEL) or a Two-Stage PAG. The purpose of these materials is to enable Litho- Litho-Etch (LLE) patterning for Pitch Division (PD) at the 16nm logic node (2013 Manufacturing). For the rCEL, we find from modeling using an E-M solver that such a material must posses a bleaching capability equivalent to a Dill A parameter of greater than 100. This is at least a factor of ten greater than that achieved so far at 193nm by any usable organic material we have tested. In the case of the Two-Stage PAG, analytical and lithographic modeling yields a usable material process window, in terms of reversibility and two-photon vs. one-photon acid production rates (branching ratio). One class of materials, based on the cycloadduct of a tethered pair of anthracenes, has shown promise under testing at 193nm in acetonitrile. Sufficient reversibility without acid production, enabled by near-UV exposure, has been achieved. Acid production as a function of dose shows a clear quadratic component, consistent with a branching ratio greater than 1. The experimental data also supports a acid contrast value of approximately 0.05 that could in principle be obtained with this molecule under a pitch division double-exposure scenario.

  2. A design of beam shaping unit for 193nm lithography illumination system using angular spectrum theory

    NASA Astrophysics Data System (ADS)

    Zhao, Yang; Gong, Yan; Li, Shun; Zhang, Wei

    2010-08-01

    Off-axis illumination (OAI) technology is widely used to enhance resolution for deep ultraviolet lithography. The realizing methods of OAI include geometrical optics method and physical optics method. However, the former has the disadvantage of weak intensity distribution controlling ability, and the latter introduces simulation errors evidently when dealing with near field diffraction propagation. A diffractive optical element (DOE) designing method using plane wave angular spectrum theory is presented in this paper. Several kinds of OAI modes at near field away from DOE can be realized, and simulation errors and the size of illuminator are also reduced. According to studying the relationships of the sampling point distance of DOE, light beam propagation distance, and the structure of the beam shaping unit, a method of determining the designing parameters is discussed. Using this method, several illumination modes are realized, and simulation results show that all diffraction efficiencies reach up to 84%. The method of DOE manufacturing is analyzed at last, and it is proven to be feasible.

  3. High-n immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Cortie, Rogier; Meijers, Ralph; Evangelista, Fabrizio; Samarakone, Nandarisi

    2008-03-01

    A two-year study on the feasibility of High-n Immersion Lithography shows very promising results. This paper reports the findings of the study. The evaluation shows the tremendous progress made in the development of second-generation immersion fluid technology. Candidate fluids from several suppliers have been evaluated. All the commercial fluids evaluated are viable, so there are a number of options. Life tests have been conducted on bench top fluid-handling systems and the results referenced to full-scale systems. Parameters such as Dose per Laser Pulse, Pulse Rate, Fluid Flow Rate, and Fluid Absorbency at 193nm, and Oxygen/Air Contamination Levels were explored. A detailed evaluation of phenomena such as Last Lens Element (LLE) contamination has been conducted. Lens cleaning has been evaluated. A comparison of High-n fluid-based technology and water-based immersion technology shows interesting advantages of High-n fluid in the areas of Defect and Resist Interaction. Droplet Drying tests, Resist Staining evaluations, and Resist Contrast impact studies have all been run. Defect-generating mechanisms have been identified and are being eliminated. The lower evaporation rate of the High-n fluids compared with water shows the advantages of High-n Immersion. The core issue for the technology, the availability of High-n optical material for use as the final lens element, is updated. Samples of LuAG material have been received from development partners and have been evaluated. The latest status of optical materials and the technology timelines are reported. The potential impact of the availability of the technology is discussed. Synergy with technologies such as Double Patterning is discussed. The prospects for <22nm (hp) are evaluated.

  4. Immersion lithography bevel solutions

    NASA Astrophysics Data System (ADS)

    Tedeschi, Len; Tamada, Osamu; Sanada, Masakazu; Yasuda, Shuichi; Asai, Masaya

    2008-03-01

    The introduction of Immersion lithography, combined with the desire to maximize the number of potential yielding devices per wafer, has brought wafer edge engineering to the forefront for advanced semiconductor manufactures. Bevel cleanliness, the position accuracy of the lithography films, and quality of the EBR cut has become more critical. In this paper, the effectiveness of wafer track based solutions to enable state-of-art bevel schemes is explored. This includes an integrated bevel cleaner and new bevel rinse nozzles. The bevel rinse nozzles are used in the coating process to ensure a precise, clean film edge on or near the bevel. The bevel cleaner is used immediately before the wafer is loaded into the scanner after the coating process. The bevel cleaner shows promise in driving down defectivity levels, specifically printing particles, while not damaging films on the bevel.

  5. Recent progress in 193-nm antireflective coatings

    NASA Astrophysics Data System (ADS)

    Meador, James D.; Guerrero, Douglas J.; Xu, Gu; Shao, Xie; Dobson, Norman; Claypool, James B.; Nowak, Kelly A.

    1999-06-01

    This paper presents the chemistries and properties of organic, spin-on, bottom antireflective coatings (BARCs) that are designed for 193 nm lithography. All of the BARCs are thermosetting and use dye-attached/incorporated polymers. A first generation product, NEXT, will soon be commercialized. NEXT is built form i-line and deep-UV chemistries with the polymeric constituent being a substitute novolac. This product provide outstanding resolution of 0.16 micrometers L/S with several 193 nm photoresists. Second generation chemical platforms under study include acrylics, polyesters, and polyethers with the 193 nm absorbing chromophore being an aromatic function. The performance of selected BARCs from the four platforms is described, including: optical properties, 193 nm litho, plasma etch rates, Prolith modeling data, spin-bowl and waste line compatibility, and ambient stability.

  6. 32nm node technology development using interference immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; McCafferty, Diane; Markoya, Louis; Hendrickx, Eric; Hermans, Jan; Ronse, Kurt

    2005-05-01

    The 38nm and 32nm lithography nodes are the next major targets for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it will not be able to achieve the 38nm or the 32nm nodes as currently defined. To achieve these next lithographic nodes will require new, very high refractive index fluids to replace the water used in current immersion systems. This paper describes tests and experiments using an interference immersion lithography test jig to develop key technology for the 32nm node. Interference imaging printers have been available for years, and with the advent of Immersion Lithography, they have a new use. Interference immersion image printing offers users a rapid, cost-effective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: Polarization of the image forming light rays; Fluid/resist interaction during exposure; Topcoat film performance; and the Line Edge Roughness (LER) of resists at extremely high resolutions can all be readily studied. Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using 193nm wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on 45nm, 38nm, and 32nm L/S features. Results on the performance of resists and topcoats are reported for 32nm L/S features.

  7. Defectivity reduction studies for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Matsunaga, Kentaro; Kondoh, Takehiro; Kato, Hirokazu; Kobayashi, Yuuji; Hayasaki, Kei; Ito, Shinichi; Yoshida, Akira; Shimura, Satoru; Kawasaki, Tetsu; Kyoda, Hideharu

    2007-03-01

    Immersion lithography is widely expected to meet the manufacturing requirements of future device nodes. A critical development in immersion lithography has been the construction of a defect-free process. Two years ago, the authors evaluated the impact of water droplets made experimentally on exposed resist films and /or topcoat. (1) The results showed that the marks of drying water droplet called watermarks became pattern defects with T-top profile. In the case that water droplets were removed by drying them, formation of the defects was prevented. Post-exposure rinse process to remove water droplets also prevented formation of the defects. In the present work, the authors evaluated the effect of pre- and post-exposure rinse processes on hp 55nm line and space pattern with Spin Rinse Process Station (SRS) and Post Immersion Rinse Process Station (PIR) modules on an inline lithography cluster with the Tokyo Electron Ltd. CLEAN TRACK TM LITHIUS TM i+ and ASML TWINSCAN XT:1700Fi , 193nm immersion scanner. It was found that total defectivity is decreased by pre- and post-exposure rinse. In particular, bridge defects and large bridge defects were decreased by pre- and post-exposure rinse. Pre- and post-exposure rinse processes are very effective to reduce the bridge and large bridge defects of immersion lithography.

  8. Hybrid source mask optimization for robust immersion lithography.

    PubMed

    Ma, Xu; Han, Chunying; Li, Yanqiu; Wu, Bingliang; Song, Zhiyang; Dong, Lisong; Arce, Gonzalo R

    2013-06-20

    To keep pace with the shrinkage of critical dimension, source and mask optimization (SMO) has emerged as a promising resolution enhancement technique to push the resolution of 193 nm argon fluoride immersion lithography systems. However, most current pixelated SMO approaches relied on scalar imaging models that are no longer accurate for immersion lithography systems with hyper-NA (NA>1). This paper develops a robust hybrid SMO (HSMO) algorithm based on a vector imaging model capable of effectively improving the robustness of immersion lithography systems to defocus and dose variations. The proposed HSMO algorithm includes two steps. First, the individual source optimization approach is carried out to rapidly reduce the cost function. Subsequently, the simultaneous SMO approach is applied to further improve the process robustness by exploiting the synergy in the joint optimization of source and mask patterns. The conjugate gradient method is used to update the source and mask pixels. In addition, a source regularization approach and source postprocessing are both used to improve the manufacturability of the optimized source patterns. Compared to the mask optimization method, the HSMO algorithm achieves larger process windows, i.e., extends the depth of focus and exposure latitude, thus more effectively improving the process robustness of 45 nm immersion lithography systems.

  9. Solvent Immersion Imprint Lithography

    SciTech Connect

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  10. Verification of optical proximity effect in immersion lithography

    NASA Astrophysics Data System (ADS)

    Suganaga, Toshifumi; Maejima, Shinroku; Hanawa, Tetsuro; Ishibashi, Takeo; Nakao, Shuji; Shirai, Seiichiro; Narimatsu, Koichiro; Suko, Kazuyuki; Shiraishi, Kenichi; Ishii, Yuki; Ando, Tomoyuki; Ohmori, Katsumi

    2006-03-01

    193 nm lithography is one of the most promising technologies for next-generation lithography and is being actively evaluated for making it practicable (1,2). First, we evaluated an immersion lithography tool (engineering evaluation tool (EET)) (3) and a dry lithography tool (S307E) with the same numerical aperture (NA = 0.85), manufactured by Nikon Corporation. As a result, an increase in the depth of focus (DOF) of the EET to 200 nm in comparison with the DOF (110 nm) of the dry exposure tool was confirmed in a 90 nm isolated space pattern. Next, the optical proximity effect (OPE) in this pattern was evaluated. Generally, when an immersion lithography tool is compared with a dry one with the same NA or both the tools, only an increase in the DOF is found. However, we confirmed that the OPE (The OPE of the 90 nm isolated space pattern is defined as the difference in the space width between a dense space and an isolated space.) of the dry exposure tool for the 90 nm isolated space pattern reduced from 33.1 nm to 14.1 nm by immersion lithography. As the effect of the reduction of 19 nm, the OPE reduced to 15.2 nm by the effect of the top coatings (TCs) and to 3.8 nm by the optical characteristics. An impact of about 5 nm on the OPE was confirmed by the process parameters-film thickness and the pre-bake temperature of the TC. In the case that the solvent was replaced with a high boiling point solvent, the impact changed from 5 to 20 nm further, the replacement of the solvent had a considerable impact on the OPE. However, this influence differs considerably according to the kind of resists; further, it was shown that the addition of acid materials and a change in the polymer base resulted in a high impact on the OPE for a certain resist. Thus, it was demonstrated that the selection of TC is very important for the OPE in immersion lithography.

  11. Binary 193nm photomasks aging phenomenon study

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sartelli, Luca; Pogliani, Carlo; Gough, Stuart; Sundermann, Frank; Miyashita, Hiroyuki; Hidenori, Yoshioka; Charras, Nathalie; Brochard, Christophe; Thivolle, Nicolas

    2011-05-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long period. These 193nm binary masks seem to be well-known but recent studies have shown surprising degrading effects, like Electric Field induced chromium Migration (EFM) [1] or chromium migration [2] [3] . Phase shift Masks (PSM) or Opaque MoSi On Glass (OMOG) might not be concerned by these effects [4] [6] under certain conditions. In this paper, we will focus our study on two layers gate and metal lines. We will detail the effects of mask aging, with SEM top view pictures revealing a degraded chromium edge profile and TEM chemical analyses demonstrating the growth of a chromium oxide on the sidewall. SEMCD measurements after volume production indicated a modified CD with respect to initial CD data after manufacture. A regression analysis of these CD measurements shows a radial effect, a die effect and an isolated-dense effect. Mask cleaning effectiveness has also been investigated, with sulphate or ozone cleans, to recover the mask quality in terms of CD. In complement, wafer intrafield CD measurements have been performed on the most sensitive structure to monitor the evolution of the aging effect on mask CD uniformity. Mask CD drift have been correlated with exposure dose drift and isolated-dense bias CD drift on wafers. In the end, we will try to propose a physical explanation of this aging phenomenon and a solution to prevent from it occurring.

  12. Process window simulation study with immersion lithography for 45-nm technology node

    NASA Astrophysics Data System (ADS)

    Park, Oseo; Gutmann, Alois; Neumueller, Walter; Back, David

    2004-05-01

    As the potentials of experimental studies are still limited, a predictive resist image simulation of Immersion lithography is very important for a better understanding of the technology. One of the most critical issues in Immersion lithography is the description of the influence of immersion which is the presence of a uniform liquid layer between the last objective lens and the photo resist, on optical lithography. It enables the real part of the index of refraction in the image space, and the numerical aperture of the projection lens, to be greater than unity. Therefore, it is virtually involves Maxwell vector solution approach, including polarization effects and arbitrary thin film multi-layers. This paper discusses the improvement in process window afforded by immersion under a variety of conditions, including 193nm and 157nm, Off-axis illumination, Attenuated Phase Shift Mask for 65nm and 45nm technology node. Comparisons with dry and liquid lithography simulations are used to evaluate the availability and the performance of the proposed approach. The implemented resist simulation approach is examined the impact to the process window of variations in liquid refractive index as well.

  13. Optimization of BARC process for hyper-NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Lee, Kilyoung; Lee, Junghyung; Lee, Sungkoo; Park, Dongheok; Bok, Cheolkyu; Moon, Seungchan

    2008-03-01

    The extension of current 193nm immersion lithography technology is depending on increasing the numerical aperture (NA). High-resolution imaging requires the decrease of photoresist thickness to compensate for smaller depth of focus (DOF) and prevent pattern collapse. Poor etch selectivity between photoresist and BARC reads to the use of thinner BARC with faster etch-rate. Also, controlling reflectance over a wider range of incident angles for hyper-NA above 1.0 gives more challenge for thin BARC. To reduce substrate reflectivity, various material strategies (dual-layer BARC such as organic/inorganic BARC or organic/organic BARC, Si-based ARC/spin-on carbon (SOC), and so on) have been introduced through many papers. Organic dual-layer BARC is capable of suppressing reflectivity through wide range of incident angles. But, the inevitable increase of its thickness is not a desirable direction due to the decreasing trend of photoresist thickness. When amorphous carbon (a-C) is used as a hardmask for sub-stack, the combination of organic/inorganic BARC (i.e. SiON) is currently well known process. Si-ARC/SOC may be the promising candidates of hardmask because Si component of Si-ARC affords a high etch selectivity to photoresist and its combination with SOC decreases reflectance. The optical constants of above organic materials can be tuned to control the substrate reflectivity for hyper-NA.

  14. Film stacking architecture for immersion lithography process

    NASA Astrophysics Data System (ADS)

    Goto, Tomohiro; Sanada, Masakazu; Miyagi, Tadashi; Shigemori, Kazuhito; Kanaoka, Masashi; Yasuda, Shuichi; Tamada, Osamu; Asai, Masaya

    2008-03-01

    In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This study used a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. This evaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge. Patterning defects were improved with suitable film stacking.

  15. Preliminary microfluidic simulations for immersion lithography

    NASA Astrophysics Data System (ADS)

    Wei, Alexander C.; Nellis, Greg F.; Abdo, Amr Y.; Engelstad, Roxann L.; Chen, Cheng-Fu; Switkes, Michael; Rothschild, Mordechai

    2003-06-01

    The premise behind immersion lithography is to improve the resolution for optical lithography technology by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer. This is accomplished through the insertion of a high index liquid in place of the low index air that currently fills the gap. The fluid management system must reliably fill the lens-wafer gap with liquid, maintain the fill under the lens throughout the entire wafer exposure process, and ensure that no bubbles are entrained during filling or scanning. This paper presents a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer in immersion lithography. The objective of this feasibility study was to identify liquid candidates that meet both optical and specific fluid mechanical requirements. The mechanics of the filling process was analyzed to simplify the problem and identify those fluid properties and system parameters that affect the process. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer were developed for simulating the process. The CFD simulations were used to investigate two methods of liquid deposition. In the first, a liquid is dispensed onto the wafer as a "puddle" and then the wafer and liquid move under the lens. This is referred to as passive filling. The second method involves the use of liquid jets in close proximity to the edge of the lens and is referred to as active filling. Numerical simulations of passive filling included a parametric study of the key dimensionless group influencing the filling process and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements. For active filling, preliminary simulation results characterized the influence of the jets on fluid flow.

  16. Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography

    NASA Astrophysics Data System (ADS)

    Kim, Sang Kyun; Cho, Hyeon Mo; Koh, Sang Ran; Kim, Mi-young; Yoon, Hui Chan; Chung, Yong-jin; Kim, Jong Seob; Chang, Tuwon

    2008-03-01

    In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.

  17. Understanding the photoresist surface-liquid interface for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Conley, Will; LeSuer, Robert J.; Fan, Frank F.; Bard, Allen J.; Taylor, Chris; Tsiartas, Pavlos; Willson, Grant; Romano, Andrew; Dammel, Ralph

    2005-05-01

    Extraction of small molecule components into water from photoresist materials designed for 193 nm immersion lithography has been observed. Leaching of photoacid generator (PAG) has been monitored using three techniques: liquid scintillation counting (LSC); liquid chromatography mass spectrometry (LCMS); and scanning electrochemical microscopy (SECM). LSC was also used to detect leaching of residual casting solvent (RCS) and base. The amount of PAG leaching from the resist films, 30 - 50 ng/cm2, was quantified using LSC. Both LSC and LCMS results suggest that PAG and photoacid leach from the film only upon initial contact with water (within 10 seconds) and minimal leaching occurs thereafter for immersion times up to 30 minutes. Exposed films show an increase in the amount of photoacid anion leaching by upwards of 20% relative to unexposed films. Films pre-rinsed with water for 30 seconds showed no further PAG leaching as determined by LSC. No statistically significant amount of residual casting solvent was extracted after 30 minutes of immersion. Base extraction was quantified at 2 ng/cm2 after 30 seconds. The leaching process is qualitatively described by a model based on the stratigraphy of resist films.

  18. Results from a new 193nm die-to-database reticle inspection platform

    NASA Astrophysics Data System (ADS)

    Broadbent, William H.; Alles, David S.; Giusti, Michael T.; Kvamme, Damon F.; Shi, Rui-fang; Sousa, Weston L.; Walsh, Robert; Xiong, Yalin

    2010-05-01

    A new 193nm wavelength high resolution reticle defect inspection platform has been developed for both die-to-database and die-to-die inspection modes. In its initial configuration, this innovative platform has been designed to meet the reticle qualification requirements of the IC industry for the 22nm logic and 3xhp memory generations (and shrinks) with planned extensions to the next generation. The 22nm/3xhp IC generation includes advanced 193nm optical lithography using conventional RET, advanced computational lithography, and double patterning. Further, EUV pilot line lithography is beginning. This advanced 193nm inspection platform has world-class performance and the capability to meet these diverse needs in optical and EUV lithography. The architecture of the new 193nm inspection platform is described. Die-to-database inspection results are shown on a variety of reticles from industry sources; these reticles include standard programmed defect test reticles, as well as advanced optical and EUV product and product-like reticles. Results show high sensitivity and low false and nuisance detections on complex optical reticle designs and small feature size EUV reticles. A direct comparison with the existing industry standard 257nm wavelength inspection system shows measurable sensitivity improvement for small feature sizes

  19. New single-layer positive photoresists for 193-nm photolithography

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Shimokawa, Tsutomu; Byers, Jeff D.; Medeiros, David R.; Willson, C. Grant; Niu, Qingshang J.; Frechet, Jean M. J.; Allen, Robert D.

    1997-07-01

    New series of chemically amplified, single layer, positive tone photoresists for 193 nm lithography have been developed. These resists were formulated from a series of cycloaliphatic co- and terpolymers of 2-methyl propyl bicyclo(2.2.1)hept-2- ene-5-carboxylate (carbo-tert-butoxynorbornene), bicyclo(2.2.1)hept-2-ene carboxylic acid (norbornene carboxylic acid), 8-methyl-8-carboxy tetracyclo(4,4,0.12,5,17,10)dodec-3-ene (methyltetracyclododecene carboxylic acid), norbornenemethanol, and maleic anhydride, which were synthesized by free radical, vinyl addition and ring opening metathesis polymerization techniques. The polymers derived from ring opening metathesis polymerization have bee successfully hydrogenated to provide yet another member of this group of materials. The cycloaliphatic polymer backbones provide etch resistance, mechanical properties and stability to radiation. The lithographic function is provided by carefully tailored pendant groups, which include an acid functionality that is masked by protecting groups that undergo acid catalyzed thermolysis as well as polar groups that influence the adhesion, wetability and dissolution properties of the polymer. The polymers are soluble in common organic solvents and have glass transition temperatures ranging from less than 60 degrees Celsius to higher than 250 degrees Celsius depending on their specific structure and mode of polymerization. They are at least as transparent at 193 nm as the corresponding acrylics. Their dry etch resistance varies with the formulation, but the base polymers etch more slowly than novolac under conditions typically used to pattern polysilicon. Upon exposure and baking, the resists have demonstrated high sensitivities (9-25 mJ/cm2), and 0.16 micrometer features have bean resolved.

  20. Defect transfer from immersion exposure process to etching process using novel immersion exposure and track system

    NASA Astrophysics Data System (ADS)

    Miyahara, Osamu; Kosugi, Hitoshi; Dunn, Shannon; van Dommelen, Youri; Grouwstra, Cedric

    2008-11-01

    For lithography technology to support the scaling down of semiconductor devices, 193-nm immersion exposure processing is being introduced to mass-production at a rapid pace. At the same time, there are still many unclear areas and many concerns to be addressed with regards to defects in 193-nm immersion lithography. To make 193-nm immersion lithography technology practical for mass production, it is essential that the defect problems be solved. Importance must be attached to understanding the conditions that give rise to defects and their transference in the steps between lithography and etching processes. It is apparent that double patterning (DP) will be the mainstream technology below 40nm node. It can be assumed that the risk of the defect generation will rise, because the number of the litho processing steps will be increased in DP. Especially, in the case of Litho-Etch-Litho-Etch (LELE) process, the concept of defect transfer becomes more important because etch processing is placed between each litho processing step. In this paper, we use 193-nm immersion lithography processing to examine the defect transference from lithography through the etching process for a representative 45nm metal layer substrate stack for device manufacturing. It will be shown which types of defects transfer from litho to etch and become killer defects.

  1. Understanding dissolution behavior of 193nm photoresists in organic solvent developers

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Hyun; Park, Jong Keun; Cardolaccia, Thomas; Sun, Jibin; Andes, Cecily; O'Connell, Kathleen; Barclay, George G.

    2012-03-01

    Herein, we investigate the dissolution behavior of 193-nm chemically amplified resist in different organic solvents at a mechanistic level. We previously reported the effect of solvent developers on the negative tone development (NTD) process in both dry and immersion lithography, and demonstrated various resist performance parameters such as photospeed, critical dimension uniformity, and dissolution rate contrast are strongly affected by chemical nature of the organic developer. We further pursued the investigation by examining the dependence of resist dissolution behavior on their solubility properties using Hansen Solubility Parameter (HSP). The effects of monomer structure, and resist composition, and the effects of different developer chemistry on dissolution behaviors were evaluated by using laser interferometry and quartz crystal microbalance. We have found that dissolution behaviors of methacrylate based resists are significantly different in different organic solvent developers such as OSDTM-1000 Developer* and n-butyl acetate (nBA), affecting their resist performance. This study reveals that understanding the resist dissolution behavior helps to design robust NTD materials for higher resolution imaging.

  2. Investigation of electron beam stabilization of 193-nm photoresists

    NASA Astrophysics Data System (ADS)

    Kim, Myoung-Soo; Park, Jong-Woon; Kim, Hak-Joon; Jun, Bum-Jin; Gil, Myung-Goon; Kim, Bong-Ho; Ross, Matthew F.; Livesay, William R.

    2001-08-01

    193nm lithography is a promising candidate for the fabrication of microelectronic devices at the 130nm design rule and below. With smaller feature sizes, below 130nm, reduced resist thickness is essential because of the pattern collapse issues at high aspect ratios and the limited depth of focus with 193nm lithography tools. However, ArF resists have shown problems with etch selectivity, especially with the thin resist layers necessary. Additionally, pattern slimming during CD-SEM measurement, due to the nature of the resist chemistry, is an issue with feature stability after patterning. At present, many studies have been performed for improving the etch selectivity of resists and addressing line slimming issues. In this study, the electron beam stabilization process has been applied for improving the etch selectivity of resist patterns having an aspect ratio less than 3.0. The electron beam stabilization has been applied to two different ArF resist types; acrylate and cyclic-olefin- maleic-anhydride (COMA), which have been evaluated with respect to materials properties, etch selectivity, and line slimming performance as a function of electron beam dose and etch condition. Film shrinkage and the change in index of refraction were monitored as a function of stabilization condition. The chemical properties were characterized before and after electron beam stabilization using FTIR analysis. Blanket resist etch rate studies were performed as a function of stabilization condition for each resist type. Cross- sectional views of resist patterns after etch processing were also investigated to evaluate the improvement in etch resistance provided by the electron beam process. CD SEM measurements were performed to evaluate the impact of the stabilization process on the patterned features. The issue of line slimming has also been evaluated, with and without electron beam stabilization, for the different ArF resist materials considered. The results were compared with a Kr

  3. An anti-reflection coating for use with PMMA at 193 nm

    NASA Technical Reports Server (NTRS)

    Yen, Anthony; Smith, Henry I.; Schattenburg, M. L.; Taylor, Gary N.

    1992-01-01

    An antireflection coating (ARC) for use with poly(methyl methacrylate) (PMMA) resist for ArF excimer laser lithography (193 nm) was formulated. It consists of PMMA and a bis-azide, 4.4-prime-diazidodiphenyl sulfone (DDS) which crosslinks the film after deep UV (260 nm) irradiation and subsequent annealing. The reacted DDS then serves as the absorber for the 193 nm radiation and also prevents mixing of the ARC and PMMA during PMMA spin-coating and development. The effectiveness of the ARC was demonstrated by exposing, in PMMA, using achromatic holographic lithography, gratings of 100 nm period (about 50 nm linewidth) that are almost entirely free of an orthogonal standing wave.

  4. EUV reticle inspection with a 193nm reticle inspector

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Inderhees, Gregg; Yamamoto, Tetsuya; Lee, Isaac; Lim, Phillip

    2013-06-01

    The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the 2015 - 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL into HVM - blank and reticle defects are among the top items. To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm wavelength reticle inspection system - the Teron 610 Series (2010). This system has become the industry standard for 22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV blank and reticle inspection in R and D. To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for currently available 14nm / 2xhp generation EUV reticles. As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify areas for further improvement with the goal to be ready for pilot lines in early 2015.

  5. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography

    SciTech Connect

    Moore, Jayven S.; Xantheas, Sotiris S.; Grate, Jay W.; Wietsma, Thomas W.; Gratton, Enrico; Vasdekis, Andreas

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL’s impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 4-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL’s modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  6. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography.

    PubMed

    Moore, J S; Xantheas, S S; Grate, J W; Wietsma, T W; Gratton, E; Vasdekis, A E

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL's impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 2-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a substantially high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL's modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  7. Inverse pupil wavefront optimization for immersion lithography.

    PubMed

    Han, Chunying; Li, Yanqiu; Dong, Lisong; Ma, Xu; Guo, Xuejia

    2014-10-10

    As the critical dimension of integrated circuits is continuously shrunk, thick mask induced aberration (TMIA) cannot be ignored in the lithography image process. Recently, a set of pupil wavefront optimization (PWO) approaches has been proposed to compensate for TMIA, based on a wavefront manipulator in modern scanners. However, these prior PWO methods have two intrinsic drawbacks. First, the traditional methods fell short in building up the analytical relationship between the pupil wavefront and the cost function, and used time-consuming algorithms to solve for the PWO problem. Second, in traditional methods, only the spherical aberrations were optimized to compensate for the focus exposure matrix tilt and best focus shift induced by TMIA. Thus, the degrees of freedom were limited during the optimization procedure. To overcome these restrictions, we build the analytical relationship between the pupil wavefront and the cost function based on Abbe vector imaging theory. With this analytical model and the Fletcher-Reeves conjugate-gradient algorithm, an inverse PWO method is innovated to balance the TMIA including 37 Zernike terms. Simulation results illustrate that our approach significantly improves image fidelity within a larger process window. This demonstrates that TMIA is effectively compensated by our inverse PWO approach.

  8. Refractive index change during exposure for 193-nm chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Oh, Hye-Keun; Sohn, Young-Soo; Sung, Moon-Gyu; Lee, Young-Mi; Lee, Eun-Mi; Byun, Sung Hwan; An, Ilsin; Lee, Kun-Sang; Park, In-Ho

    1999-06-01

    Some of the important areas to be improved for lithography simulation are getting correct exposure parameters and determining the change of refractive index. It is known that the real and imaginary refractive indices are changed during exposure. We obtained these refractive index changes during exposure for 193 nm chemically amplified resists. The variations of the transmittance as well as the resist thickness were measured during ArF excimer laser exposure. We found that the refractive index change is directly related to the concentration of the photo acid generator and de-protected resin. It is important to know the exact values of acid concentration from the exposure parameters since a small difference in acid concentration magnifies the variation in the amplified de-protection during post exposure bake. We developed and used a method to extract Dill ABC exposure parameters for 193 nm chemically amplified resist from the refractive index change upon exposure.

  9. Inline detection of Chrome degradation on binary 193nm photomasks

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

    2013-09-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300

  10. Double patterning in lithography for 65nm node with oxidation process

    NASA Astrophysics Data System (ADS)

    Jeong, Eunsoo; Kim, Jeahee; Choi, Kwangsun; Lee, Minkon; Lee, Doosung; Kim, Myungsoo; Park, Chansik

    2008-03-01

    Recently, in order to increase the number of transistors in wafer by small feature size, optical lithography has been changed to low wavelength from 365nm to 193nm and high NA of 0.93. And further wavelength is aggressively shifting to 13.5nm for more small feature size, i.e., Extreme Ultra Violet Lithography(EUVL), a kind of Next Generation Lithography(NGL)1. And other technologies are developed such as water immersion(193nm) and photo resist Double Patterning(DP). Immersion lens system has high NA up to 1.3 due to high n of water(n=1.44 at 193nm), the parameter k1 is process constant, but 0.25 is a tough limit at a equal line and space, if we use immersion lens with 193nm wavelength than limit of resolution is 37nm. Especially, Double Exposure Technique(DET) process is widely studied because of the resolution enhancement ability using a same material and machine, despite of process complication. And SADP(Self Aligned Double Patten) is newly researched for overlay and LER(Line Edge Roughness) enhancement. In this paper, we illustrate the feasibility of the shift double pattern for 65nm-node flash using a 193nm light dipole source and the possibility of decrease minimum feature size using a property of silicon shrinkage during thermal oxidation process.

  11. Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring

    NASA Astrophysics Data System (ADS)

    Jones, Chris M.; Kallingal, Chidam; Zawadzki, Mary T.; Jeewakhan, Nazneen N.; Kaviani, Nazila N.; Krishnan, Prakash; Klaum, Arthur D.; Van Ess, Joel

    2003-05-01

    The development of 100-nm design rule technologies is currently taking place in many R&D facilities across the world. For some critical alyers, the transition to 193-nm resist technology has been required to meet this leading edge design rule. As with previous technology node transitions, the materials and processes available are undergoing changes and improvements as vendors encounter and solve problems. The initial implementation of the 193-nm resits process did not meet the photolithography requirements of some IC manufacturers due to very high Post Exposure Bake temperature sensitivity and consequently high wafer to wafer CD variation. The photoresist vendors have been working to improve the performance of the 193-nm resists to meet their customer's requirements. Characterization of these new resists needs to be carried out prior to implementation in the R&D line. Initial results on the second-generation resists evaluated at Cypress Semicondcutor showed better CD control compared to the aelrier resist with comparable Depth of Focus (DOF), Exposure Latitute, Etch Resistance, etc. In addition to the standard lithography parameters, resist characterization needs to include defect density studies. It was found that the new resists process with the best CD control, resulted in the introduction of orders of magnitude higher yield limiting defects at Gate, Contact adn Local Interconnect. The defect data were shared with the resists vendor and within days of the discovery the resist vendor was able to pinpoint the source of the problem. The fix was confirmed and the new resists were successfully released to production. By including defect monitoring into the resist qualification process, Cypress Semiconductor was able to 1) drive correction actions earlier resulting in faster ramp and 2) eliminate potential yield loss. We will discuss in this paper how to apply the Micro Photo Cell Monitoring methodology for defect monitoring in the photolithogprhay module and the

  12. The Photochemistry of Cyano and Dicyanoacetylene at 193 nm.

    DTIC Science & Technology

    1987-07-28

    Halpern, L. Petway , R. Lu, W.M. Jackson, and V.R. McCrary and W. Nottingham Prepared for submission to the Journal of Chemical Physics Department of...CYANO- AND DICYANOACETYLENE AT 193 NM By J. B. Halpern% L. Petway , R. Lu W. M. Jackson , and V. R. McCrary Department of Chemistry Howard University

  13. Using scanning electrochemical microscopy to probe chemistry at the solid-liquid interface in chemically amplified immersion lithography

    NASA Astrophysics Data System (ADS)

    LeSuer, Robert J.; Fan, Fu-Ren F.; Bard, Allen J.; Taylor, J. Christopher; Tsiartas, Pavlos; Willson, Grant; Conley, Willard E.; Feit, Gene; Kunz, Roderick R.

    2004-05-01

    Three modes of scanning electrochemical microscopy (SECM) - voltammetry, pH, and conductivity - have been used to better understand the chemistry at, and diffusion through, the solid/liquid interface formed between a resist film and water in 193 nm immersion lithography. Emphasis has been placed on investigating the photoacid generator (PAG), triphenylsulfonium perfluorobutanesulfonate, and the corresponding photoacid. The reduction of triphenylsulfonium at a hemispherical Hg microelectrode was monitored using square wave voltammetry to detect trace amounts of the PAG leaching from the surface. pH measurements at a 100 μm diameter Sb microelectrode show the formation of acid in the water layer above a resist upon exposure with UV irradiation. Bipolar conductance measurements at a 100 μm Pt tip positioned 100 μm from the surface indicate that the conductivity of the solution during illumination is dependent upon the percentage of PAG in the film. Liquid chromatography mass spectrometric analysis of water samples in contact with resist films has been used to quantify the amounts (< 10 ng/cm2) of PAG leaching from the film in the dark which occurs within the first 30 seconds of contact time. Washing the film removes approximately 80% of the total leachable PAG.

  14. Carbon Nanotube Scanning Probe for Surface Profiling of DUV and 193 nm Photoresist Pattern

    NASA Technical Reports Server (NTRS)

    Nguyen, Cattien V.; Stevens, Ramsey M. D.; Barber, Jabulani; Han, Jie; Meyyappan, M.; Sanchez, Martha I.; Larson, Carl; Hinsberg, William D.; Arnold, Jim (Technical Monitor)

    2001-01-01

    The continual scaling down of semiconductors to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscope coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable to resolve steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.

  15. Solvent immersion nanoimprint lithography of fluorescent conjugated polymers

    NASA Astrophysics Data System (ADS)

    Whitworth, G. L.; Zhang, S.; Stevenson, J. R. Y.; Ebenhoch, B.; Samuel, I. D. W.; Turnbull, G. A.

    2015-10-01

    Solvent immersion imprint lithography (SIIL) was used to directly nanostructure conjugated polymer films. The technique was used to create light-emitting diffractive optical elements and organic semiconductor lasers. Gratings with lateral features as small as 70 nm and depths of ˜25 nm were achieved in poly(9,9-dioctylfluorenyl-2,7-diyl). The angular emission from the patterned films was studied, comparing measurement to theoretical predictions. Organic distributed feedback lasers fabricated with SIIL exhibited thresholds for lasing of ˜40 kW/cm2, similar to those made with established nanoimprint processes. The results show that SIIL is a quick, convenient and practical technique for nanopatterning of polymer photonic devices.

  16. Thin bilayer resists for 193-nm and future photolithography II

    NASA Astrophysics Data System (ADS)

    Hishiro, Yoshi; Hyatt, Michael

    2007-03-01

    Bilayer, Si-containing resists are a technique of interest and a strong candidate to replace chemical vapor deposition (CVD) hardmask processes for small critical dimensions (CDs). Previously, we proposed a very thin film approach using bilayer resists for future lithography, defined the requirements for the resists, and demonstrated 55nm transferred patterns with high aspect ratios using 2-beam interferometer exposure. In this paper, we have demonstrated smaller-than- 60nm transferred patterns with a high numerical aperture (NA) scanner, as well as 45nm and 40nm transferred patterns with a 2-beam system using a 20% Si-containing thin bilayer resist. Immersion scanner exposure and a 35nm CD with 2- beam system were also studied.

  17. Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Nagaoka, Shiro; Yoshida, Masato; Iriuchijima, Yasuhiro; Fujiwara, Tomoharu; Shiraishi, Kenichi; Owa, Soichi

    2008-03-01

    Volume production of 45nm node devices utilizing Nikon's S610C immersion lithography tool has started. Important to the success in achieving high-yields in volume production with immersion lithography has been defectivity reduction. In this study we evaluate several methods of defectivity reduction. The tools used in our defectivity analysis included a dedicated immersion cluster tools consisting of a Nikon S610C, a volume production immersion exposure tool with NA of 1.3, and a resist coater-developer LITHIUS i+ from TEL. In our initial procedure we evaluated defectivity behavior by comparing on a topcoat-less resist process to a conventional topcoat process. Because of its simplicity the topcoatless resist shows lower defect levels than the topcoat process. In a second study we evaluated the defect reduction by introducing the TEL bevel rinse and pre-immersion bevel cleaning techniques. This technique was shown to successfully reduce the defect levels by reducing the particles at the wafer bevel region. For the third defect reduction method, two types of tool cleaning processes are shown. Finally, we discuss the overall defectivity behavior at the 45nm node. To facilitate an understanding of the root cause of the defects, defect source analysis (DSA) was applied to separate the defects into three classes according to the source of defects. DSA analysis revealed that more than 99% of defects relate to material and process, and less than 1% of the defects relate to the exposure tool. Material and process optimization by collaborative work between exposure tool vendors, track vendors and material vendors is a key for success of 45nm node device manufacturing.

  18. Advances in 193 nm excimer lasers for mass spectrometry applications

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph; Esser, Hans-Gerd; Bonati, Guido

    2016-03-01

    Ongoing progress in mass analysis applications such as laser ablation inductively coupled mass spectrometry of solid samples and ultraviolet photoionization mediated sequencing of peptides and proteins is to a large extent driven by ultrashort wavelength excimer lasers at 193 nm. This paper will introduce the latest improvements achieved in the development of compact high repetition rate excimer lasers and elaborate on the impact on mass spectrometry instrumentation. Various performance and lifetime measurements obtained in a long-term endurance test over the course of 18 months will be shown and discussed in view of the laser source requirements of different mass spectrometry tasks. These sampling type applications are served by excimer lasers delivering pulsed 193 nm output of several mJ as well as fast repetition rates which are already approaching one Kilohertz. In order to open up the pathway from the laboratory to broader market industrial use, sufficient component lifetimes and long-term stable performance behavior have to be ensured. The obtained long-term results which will be presented are based on diverse 193 nm excimer laser tube improvements aiming at e.g. optimizing the gas flow dynamics and have extended the operational life the laser tube for the first time over several billion pulses even under high duty-cycle conditions.

  19. Development of high coherence high power 193nm laser

    NASA Astrophysics Data System (ADS)

    Tanaka, Satoshi; Arakawa, Masaki; Fuchimukai, Atsushi; Sasaki, Yoichi; Onose, Takashi; Kamba, Yasuhiro; Igarashi, Hironori; Qu, Chen; Tamiya, Mitsuru; Oizumi, Hiroaki; Ito, Shinji; Kakizaki, Koji; Xuan, Hongwen; Zhao, Zhigang; Kobayashi, Yohei; Mizoguchi, Hakaru

    2016-03-01

    We have been developing a hybrid 193 nm ArF laser system that consists of a solid state seeding laser and an ArF excimer laser amplifier for power-boosting. The solid state laser consists of an Yb-fiber-solid hybrid laser system and an Er-fiber laser system as fundamentals, and one LBO and three CLBO crystals for frequency conversion. In an ArF power amplifier, the seed laser passes through the ArF gain media three times, and an average power of 110 W is obtained. As a demonstration of the potential applications of the laser, an interference exposure test is performed.

  20. Solid sampling with 193-nm excimer laser ablation

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph

    2007-02-01

    Reproducible and sensitive elemental analysis of solid samples is a crucial task in areas of geology (e.g. microanalysis of fluid inclusions), material sciences, industrial quality control as well as in environmental, forensic and biological studies. To date the most versatile detection method is mass-spectroscopic multi-element analysis. In order to obtain reproducible results, this requires transferring the solid sample into the gas-phase while preserving the sample's stoichiometric composition. Laser ablation in combination with Inductively Coupled Plasma-Mass Spectrometry (LA-ICP-MS) is a proven powerful technique to meet the requirements for reliable solid sample analysis. The sample is laser ablated in an air-tight cell and the aerosol is carried by an inert gas to a micro-wave induced plasma where its constituents are atomized and ionized prior to mass analysis. The 193 nm excimer laser ablation, in particular, provides athermal sample ablation with very precise lateral ablation and controlled depth profiling. The high photon energy and beam homogeneity of the 193 nm excimer laser system avoids elemental fractionation and permits clean ablation of even transmissive solid materials such as carbonates, fluorites and pure quartz.

  1. Tuning and simulating a 193-nm resist for 2D applications

    NASA Astrophysics Data System (ADS)

    Howard, William B.; Wiaux, Vincent; Ercken, Monique; Bui, Bang; Byers, Jeff D.; Pochkowski, Mike

    2002-07-01

    For some applications, the usefulness of lithography simulation results depends strongly on the matching between experimental conditions and the simulation input parameters. If this matching is optimized and other sources of error are minimized, then the lithography model can be used to explain printed wafer experimental results. Further, simulation can be useful in predicting the results or in choosing the correct set of experiments. In this paper, PROLITH and ProDATA AutoTune were used to systematically vary simulation input parameters to match measured results on printed wafers used in a 193 nm process. The validity of the simulation parameters was then checked using 3D simulation compared to 2D top-down SEM images. The quality of matching was evaluated using the 1D metrics of average gate CD and Line End Shortening (LES). To ensure the most accurate simulation, a new approach was taken to create a compound mask from GDSII contextual information surrounding an accurate SEM image of the reticle region of interest. Corrections were made to account for all metrology offsets.

  2. Lactones in 193 nm resists: What do they do?

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Truong, Hoa D.; Brock, Phil J.

    2008-03-01

    Lactones are almost ubiquitously employed in 193 nm resists to increase the polarity of hydrophobic alicyclic polymers. What else do lactones do in 193 nm resists? We studied the behavior of methacrylate (MA) resists consisting of different protecting groups, hexafluoroalcohols, and norbornane lactone methacrylate (NLM, 2-oxo-3-oxatricyclo[4.2.1.04,8]nonan-5-yl methacrylate). When the protecting group is large [ethylcyclooctyl (ECO) and methyladamantyl (MAd)], thinning of the resist film that occurs in highly exposed areas upon postexposure bake (PEB) is significantly smaller than what is expected from the polymer composition. When the concentration of isopropylhexafluoroalcohol methacrylate (iPrHFAMA) is increased in the ECOMA-NLM polymer, the thinning increases and reaches 100% of theory and the ECOMA-norbornenehexafluoroalcohol methacrylate (NBHFAMA) resist loses quantitative thickness in highly-exposed areas upon PEB at 90 °C. This indicates that small lactones which are more basic than esters can trap deprotection fragments especially when the protecting group is large. Such entrapment was detected by IR spectroscopy and also observed at temperatures as high as 200 °C in thermogravimetric analysis (TGA). Incorporation of lactone appears to decrease the bake temperature sensitivity and the sensitivity of the resist perhaps due to trapping of photochemically generated acids by basic lactone. The lactone ring can be hydrolyzed during aqueous base development but does not seem to affect the dissolution rate, indicating that hydrolysis occurs in aqueous base solution after dissolution. Poly(methacrylic acid-NLM) dissolves as fast as poly(methacrylic acid) in 0.26 N tetramethylammonium hydroxide (TMAH) aqueous solution. While exposed P(ECOMA 47-NLM 53) resist dissolves in 0.26 N developer at about the same rate as authentically prepared poly(methacrylic acid 47-NLM 53), the dissolution rate of highly-exposed P(MAdMA 44-NLM 56) resist is much slower, indicating

  3. Development of high coherence, 200mW, 193nm solid-state laser at 6 kHz

    NASA Astrophysics Data System (ADS)

    Nakazato, T.; Tsuboi, M.; Onose, T.; Tanaka, Y.; Sarukura, N.; Ito, S.; Kakizaki, K.; Watanabe, S.

    2015-02-01

    The high coherent, high power 193-nm ArF lasers are useful for interference lithography and microprosessing applications. In order to achieve high coherence ArF lasers, we have been developing a high coherence 193 nm solid state laser for the seeding to a high power ArF laser. We used the sum frequency mixing of the fourth harmonic (FH) of a 904-nm Ti:sapphire laser with a Nd:YVO4 laser (1342 nm) to generate 193-nm light. The laser system consists of a single-mode Ti:sapphire oscillator seeded by a 904-nm external cavity laser diode, a Pockels cell, a 6-pass amplifier, a 4-pass amplifier, a 2-pass amplifier and a wavelength conversion stage. The required repetition rate of 6 kHz corresponding to the ArF laser, along with a low gain at 904 nm induces serious thermal lens effects; extremely short focal lengths of the order of cm and bi-foci in the vertical and horizontal directions. From the analysis of thermal lens depending on pump intensity, we successfully compensated the thermal lens by dividing a 527-nm pump power with 15, 25 and 28 W to 3-stage amplifiers with even passes, resulting in the output power above 10W with a nearly diffraction limited beam. This 904-nm output was converted to 3.8 W in the second harmonic by LBO, 0.5 W in FH by BBO sequentially. Finally the output power of 230 mW was obtained at 193 nm by mixing the FH with a 1342-nm light in CLBO.

  4. Technique for cellular microsurgery using the 193-nm excimer laser.

    PubMed

    Palanker, D; Ohad, S; Lewis, A; Simon, A; Shenkar, J; Penchas, S; Laufer, N

    1991-01-01

    A new cell surgery technique has been developed to produce well-defined alterations in cells and tissue without detectable heating and/or other structural damage in the surroundings. The technique involves the use of an argon fluoride excimer laser, in the deep ultraviolet (UV) region of the spectrum at 193 nm, which is guided through a glass pipette filled with a positive air pressure. To demonstrate the method, holes were drilled in the zona pellucida of mouse oocytes. The diameter of the drilled hole was determined by the pipette tip size, and its depth by an energy emitted per pulse and number of pulses. Scanning electron microscopy of the drilled mouse oocytes showed uniform, round, well-circumscribed holes with sharp edges. Oocytes that had their zona pellucida drilled with this new method fertilized in vitro and developed to the blastocyst stage in a rate similar to that of control group. These results demonstrate the nonperturbing nature of this cold laser microsurgical procedure. In addition to the extension of our results for clinical in vitro fertilization purposes, such as enhancement of fertilization and embryo biopsy, there are wide-ranging possible uses of our method in fundamental and applied investigations that require submicron accuracy in cellular alteration.

  5. Efficient modeling of immersion lithography in an aggressive RET mask synthesis flow

    NASA Astrophysics Data System (ADS)

    Bai, Min; Lei, Junjiang; Zhang, Lin; Shiely, James P.

    2005-06-01

    Immersion lithography has been accepted as the major breakthrough for enabling next generation deep subwavelength chip production. As it extends the resolution capability of optical lithography to the next technology node, it brings fresh challenges to resolution enhancement techniques (RET). Accurate lithography modeling becomes even more critical for RET at the sub-65nm nodes. On the other hand, immersion models need to be fully compatible within the context of existing optical proximity correction (OPC) flow. With the hyper NA approach, modeling of immersion lithography requires full vector treatment of the electric fields in the propagating light wave. We developed a comprehensive vector model that considers not only the plane wave decomposition from the mask to the wafer plane, but also the light propagation through a thin film stack on the wafer. With the integration of this model into Synopsys OPC modeling tool ProGen, we have simulated and demonstrated several important enhancements introduced by immersion. In the mean time, the modeling and correction flow for immersion is completely compatible with the current OPC infrastructure.

  6. 193-nm radiation durability study of MoSi binary mask and resulting lithographic performance

    NASA Astrophysics Data System (ADS)

    Servin, Isabelle; Belledent, Jérôme; Pain, Laurent; Connolly, Brid; Sczyrba, Martin; Lamantia, Matt

    2011-05-01

    Dimensions on mask continue to shrink to keep up with the ITRS roadmap. This has implications on the material of choice for the blanks. For example, the new binary OMOG stack (Opaque MOSi on Glass) was successfully introduced to meet the mask specifications at the 32nm technology node. Obviously 193-nm optical lithography will be further used in production at even higher NA and lower k1 emphasizing, for example, the impact on wafer of any electromagnetic field migration effects. Indeed, long term radiation damage inducing CD growth and consequently, device yield loss, has already been reported [1, 2]. This mechanism, known as Electric Field induced Migration of chrome (EMF) often shortens the mask's lifetime. Here, a study was conducted to investigate the impact of intensive ArF scanner exposure both on final wafer and mask performances. The Si printed wafers measured with top-down CD-SEM were characterized with respect to CD uniformity, linearity, Sub Resolution Assist Feature (SRAF) printability through process window, MEEF, DOF, and OPC accuracy. The data was also correlated to advanced mask inspection results (e.g. AIMSTM) taken at the same location. More precisely, this work follows a preliminary study [1] which pointed out that OMOG is less sensitive to radiation than standard COG (Chrome On Glass). And, in this paper, we report on results obtained at higher energy to determine the ultimate lifetime of OMOG masks.

  7. Characterization of resist and topcoat properties for immersion lithography

    NASA Astrophysics Data System (ADS)

    Jain, Kaveri; Hishiro, Yoshi

    2008-03-01

    For this paper, we have performed a fundamental characterization of various resists and topcoats supplied by different vendors. The resists and topcoats were selected based on the inherent properties of these chemicals (elemental composition, contact angle, etc.). The goal of this study is to better understand the resist and topcoat interaction under various process conditions. We have characterized these materials using a number of analytical techniques such as atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). We have also provided data on the effect of the constitution of the resist and topcoat materials on the resist profile, under both dry and immersion exposure.

  8. Charting CEBL's role in mainstream semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Lam, David K.

    2013-09-01

    historically kept it out of mainstream fabs. Thanks to continuing EBDW advances combined with the industry's move to unidirectional (1D) gridded layout style, EBDW promises to cost-efficiently complement 193nm ArF immersion (193i) optical lithography in high volume manufacturing (HVM). Patterning conventional 2D design layouts with 193i is a major roadblock in device scaling: the resolution limitations of optical lithography equipment have led to higher mask cost and increased lithography complexity. To overcome the challenge, IC designers have used 1D layouts with "lines and cuts" in critical layers.1 Leading logic and memory chipmakers have been producing advanced designs with lines-and-cuts in HVM for several technology nodes in recent years. However, cut masks in multiple optical patterning are getting extremely costly. Borodovsky proposes Complementary Lithography in which another lithography technology is used to pattern line-cuts in critical layers to complement optical lithography.2 Complementary E-Beam Lithography (CEBL) is a candidate to pattern the Cuts of optically printed Lines. The concept of CEBL is gaining acceptance. However, challenges in throughput, scaling, and data preparation rate are threatening to deny CEBL's role in solving industry's lithography problem. This paper will examine the following issues: The challenges of massively parallel pixel writing The solutions of multiple mini-column design/architecture in: Boosting CEBL throughput Resolving issues of CD control, CDU, LER, data rate, higher resolution, and 450mm wafers The role of CEBL in next-generation solution of semiconductor lithography

  9. Lithography options for the 32nm half pitch node and their implications on resist and material technology

    NASA Astrophysics Data System (ADS)

    Gronheid, Roel; Hendrickx, Eric; Wiaux, Vincent; Maenhoudt, Mireille; Goethals, Mieke; Vandenberghe, Geert; Ronse, Kurt

    2008-03-01

    There still remain three major technological lithography options for high volume manufacturing at the 32nm half pitch node: 193nm immersion lithography with high index materials, enabling NA>1.6 193nm double patterning and EUV lithography. In this paper the pros and cons of these three options will be discussed. Particular interest will be paid to the consequences of the final choice on the resist technology. High index 193nm immersion lithography also requires high index resist materials, which are under development but still far removed from the target refractive index and absorbance specifications not to mention lithographical performance. For double patterning the pitch may be relaxed, but the resists still need to be able to print very narrow lines and/or trenches. Moreover, it would be preferred for the resists to support pattern or image freezing techniques in order to step away from the litho-etch-litho-etch approach and make double patterning more cost effective. For EUV the resist materials need to meet very aggressive sensitivity specifications. In itself this is possible, but it is difficult to simultaneously maintain performance in terms of resolution and line width roughness. A new parameter (K LUP) for assessing resist performance in terms of these three performance criteria will be introduced.

  10. The art of photomask materials for low-k1-193nm lithography

    NASA Astrophysics Data System (ADS)

    Hashimoto, Masahiro; Iwashita, Hiroyuki; Mitsui, Hideaki

    2009-04-01

    The resolution of photomask patterns were improved with a hardmask (HM) system. The system which is thin Sicompounds layer is easily etched by the hyper-thin resist (below 100nm thickness). The HM material has sufficient etching selectivity against the chrome-compounds which is the second layer chrome absorber for the phase-shifter. This hardmask layer has been completely removed during the phase-shifter etching. It means that the conventional phase-shit mask (PSM) has been made with the ultimately high-resolution without configuration changes. Below 50nm resolution of PSM was made with 90nm thickness resist on HM layer in this paper. The CD bias between a resist feature CD and a chrome feature CD was almost zero (below 1nm) in the optimized etching condition. We confirmed that the mask performances were the equal to COMS (Cr-HM on MoSi binary mask) in resolution and CD linearity. The performances of hardmask blanks will be defined by resist performance because of almost zero bias.

  11. Absorption coefficients for water vapor at 193 nm from 300 to 1073 K

    NASA Technical Reports Server (NTRS)

    Kessler, W. J.; Carleton, K. L.; Marinelli, W. J.

    1993-01-01

    Measurements of the water absorption coefficient at 193 nm from 300 to 1073 K are reported. The measurements were made using broadband VUV radiation and a monochromator-based detection system. The water vapor was generated by a saturator and metered into a flowing, 99 cm absorption cell via a water vapor mass flow meter. The 193 nm absorption coefficient measurements are compared to room temperature and high temperature shock tube measurements with good agreement. The absorption can be parameterized by a nu3 vibrational mode reaction coordinate and the thermal population of the nu3 mode.

  12. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications

    NASA Astrophysics Data System (ADS)

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I.; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.69), which enables efficient light focusing even inside other media such as water or adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping and fiber probes.

  13. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes.

  14. Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications

    NASA Astrophysics Data System (ADS)

    de Klerk, Jos; Jorritsma, Louis; van Setten, Eelco; Droste, Richard; du Croo de Jongh, Richard; Hansen, Steven G.; Smith, Dan; van de Kerkhof, Mark A.; van de Mast, Frank; Graeupner, Paul; Rohe, Thomas; Kornitzer, Klaus

    2003-06-01

    As the semiconductor industry looks into the near future to extend manufacturing beyond 100nm, a new optical lithography system was developed by ASML. To achieve the aggressive industry roadmap and enable high volume manufacturing of sub 100nm resolutions at low k1 requires a number of challenges to be overcome. This paper reviews the design, system performance and measurements of a High NA, Dual stage 193nm TWINSCAN system planned for high volume manufacturing for 80nm applications. The overall system capability to effectively measure and control to a high precision the various attributes upon process control necessary for adequate CD control, in the low k1 regime will be shown. This paper will discuss the needed imaging control and the requirement for an extremely stable and matured platform. The system's dynamic, focus, leveling and dose delivery performance will be shown. Additionally, the automated control features of the optical system will be shown that enable the use of the various resolution enhancement techniques (RET) currently under development. The ability to optimize imaging performance with the control and flexibility in the pupil formation optics will be discussed. Finally, experimental results of an in-situ measurement technique with automated feedback control to optimize projection lens aberrations, which has a direct impact to imaging fidelity, will be shown. In summary, the lithographic system functionality and performance needed to achieve 80nm volume manufacturing will be presented.

  15. High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester finctionalities

    NASA Astrophysics Data System (ADS)

    Khojasteh, Mahmoud; Chen, K. Rex; Kwong, Ranee W.; Lawson, Margaret C.; Varanasi, Pushkara R.; Patel, Kaushal S.; Kobayashi, Eiichi

    2003-06-01

    ArF lithography has been selected as the imaging method for the 90 nm technology node. Manufacturing related issues will have to be addressed when designing advanced 193 nm resists that are production worthy. Post exposure bake (PEB) sensitivity, dissolution properties and process window are some issues that need continuous improvement. Initially our investigation focused on a cyclic olefin (CO) platform which led us to a better understanding of the relationship between polymer structure and physical properties and how to improve cyclic olefin resist performance. Since then we have developed a new class of acrylate polymers with pendant "spaced ester" functionality. We have investigated the potential use of "spaced ester" functionality on improving the lithographic performance of CO and acrylate resist platforms. We have found that with "spaced ester" as pending group in CO polymer structures, it can lower the Tg and improve the dissolution properties of the CO resists. Resists formulated with acrylate containing "spaced ester" group exhibit excellent PEB temperature sensitivity (1 nm/°C), and are soluble in PGMEA. In addition, we have demonstrated sub-100 nm resolution with excellent process window through formulation optimization for acrylate based resists. This paper will focus on the "spaced ester" based polymer design, material properties; resist characteristics, and the lithographic performance for logic dense line applications.

  16. Studies on a cross-linking type positive 193nm photoresist material

    NASA Astrophysics Data System (ADS)

    Wang, Liyuan; Guo, Xin; Chu, Zhanxing; Wang, Wenjun

    2006-03-01

    A kind of diacid, acrylpimaric acid, with condensed alicyclic structure and good film-forming property, was prepared by the Diels-Alder reaction of abietic acid and acrylic acid. In their solid film, the diacid can react with divinyl ether, such as 1,3-divinyloxyethoxybenzene when baked above 80 °C and become insoluble in dilute aqueous base. Thus formed compound can be quickly decomposed at the presence of strong acid generated by PAG above 100 °C and become easily soluble in dilute aqueous base. A positive photoresist can be formed by the diacid, divinyl ether and PAG. The measured photosensitivity is less than 50 mj/cm2 when exposed to low pressure Hg lamp (254nm). The diacid mixture displayed lower transparency than estimated at 193 nm and should be further purified to be used in 193 nm photoresist.

  17. Long Coherence Length 193 nm Laser for High-Resolution Nano-Fabrication

    DTIC Science & Technology

    2008-06-27

    ns pulses, considering Kerr self phase modulation and perhaps Kramers- Kronig self phase modulation as well? What conversion efficiency to 193.4 nm is...Kramers- Kronig phase related to Actinix 31 6/27/2008 Long Coherence Length 193-nm Laser for High-Resolution Nano-Fabrication DARPA Phase I STTR Final...by. Usually the n 2 contribution is the larger of the two, and better characterized. I do not include a Kramers- Kronig contribution in the

  18. Comparison of acid-generating efficiencies in 248 and 193-nm photoresists

    NASA Astrophysics Data System (ADS)

    Cameron, James F.; Chan, Nicholas; Moore, Kathryn; Pohlers, Gerd

    2001-08-01

    Photoacid generation is a critical step in the application of chemically amplified (CA) resist technology. During the key exposure step, a catalytic amount of a strong Bronsted acid is released within these resists. The photoacid is subsequently used in a post-exposure bake step to catalytically react with the resist polymer. In the case of a positive tone resist, an acid sensitive polymer is deprotected to render the exposed areas soluble in dilute aqueous base thereby allowing for pattern development. As the semicondutor industry beings to focus on developing 193 nm photoresists for production, it si important to identify and understand differences between prototype 193nm CA resists and current state of the art 248nm production worth photoresists. The major difference between 193 and 248 nm photoresists is the exposure wavelength, which isr educed to achieve higher resolution based on the Rayleigh equation. However, this change in wavelength has several ramifications: Firstly, the tried, tested and true phenolic polymers used in DUV resists are too absorbent to be used fo 193nm application and had to be replaced by low absorbing, non-aromatic systems. Second, since even these new platforms are still more absorbing at 193 nm than the phenolic matrices are at 248nm, the PAG loading had to be lowered significantly in order to keep the overall absorbance of the resist down. This paper descibes the results of our systematic studies on understanding the reasons for observed differences in photoacid generating efficincy between 193 and 248nm chemically amplified resist systems. First the wavelength effect is studied by comparing the relative acid generating efficiency of onium type PAGs in a prototype 193nm and a DUV photoresist at both 193 nm and 248 nm exposure. Second, the photoacid generating efficiency for these PAGs at 238 nm is compared in both phenolic and non-phenolic based photoresists to probe resist polymer matrix effects. Third, these experiments were

  19. Performance of a 1.35NA ArF immersion lithography system for 40-nm applications

    NASA Astrophysics Data System (ADS)

    de Klerk, Jos; Wagner, Christian; Droste, Richard; Levasier, Leon; Jorritsma, Louis; van Setten, Eelco; Kattouw, Hans; Jacobs, Jowan; Heil, Tilmann

    2007-03-01

    Water based immersion lithography is now widely recognized a key enabler for continued device shrinks beyond the limits of classical dry lithography. Since 2004, ASML has shipped multiple TWINSCAN immersion systems to IC manufacturers, which have facilitated immersion process integration and optimization. In early 2006, ASML commenced shipment of the first immersion systems for 45nm volume production, featuring an innovative in-line catadioptric lens with a numerical aperture (NA) of 1.2 and a high transmission polarized illumination system. A natural extension of this technology, the XT:1900Gi supports the continued drive for device shrinks that the semiconductor industry demands by offering 40nm half-pitch resolution. This tool features a projection lens based on the already proven in-line catadioptric lens concept but with an enhanced, industry leading NA of 1.35. In this paper, we will discuss the immersion technology challenges and solutions, and present performance data for this latest dual wafer stage TWINSCAN immersion system.

  20. Development of high-transmittance phase-shifting mask for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Ahn, Won-suk; Seo, Hwan-Seok; Bang, Ju-Mi; Kim, Ji-Young; Song, Jae-Min; Seung, Byoung-Hoon; Kim, Hee-Bom; Jeon, Chan-Uk

    2015-07-01

    A new PSM using high transmittance is developed to overcome patterning process limits in ArF immersion lithography. We optimized mask structure, materials, and film thicknesses for patterning process. A new material for phase-shifter is applied to the HT-PSM to exhibit higher transmittance in ArF wavelengths and the thickness of the new material is thinner than that of the conventional 6% phase-shifter (MoSiON). A new blank structure using a MoSi shading layer with double Cr hardmasks (HM) is developed and suggested for the HTPSM process. Double HM blank stacks enable the HT-PSM to adopt thin PR process for resolution enhancement in mask process. The first Cr on the MoSi is utilized as a HM to etch MoSi shading layer, an adhesion layer for PR process, and also a capping layer to protect blind area during MoSi and phase-shifter etching. In contrast, the role of the second Cr between MoSi and phase-shifter is an etch stopper for MoSi and a HM to etch phase-shifter at the same time. However, Double HM process has some problems, such as first Cr removal during second Cr etching and complex process steps. To solve the Cr removal issues, we evaluated various Cr layers which have different etchrates and compositions. According to the evaluations, we optimized thicknesses and compositions of the two Cr layers and corresponding etching conditions. Lithography simulations demonstrate that the new HT-PSM has advantages in NILS in aerial images. As a result, initial wafer exposure experiments using the HT-PSM show 13-32% improvements in LCDU compared to that of the conventional 6% PSM due to its higher NILS.

  1. Towards ultimate optical lithography with NXT:1950i dual stage immersion platform

    NASA Astrophysics Data System (ADS)

    Castenmiller, Tom; van de Mast, Frank; de Kort, Toine; van de Vin, Coen; de Wit, Marten; Stegen, Raf; van Cleef, Stefan

    2010-04-01

    Optical lithography, currently being used for 45-nm semiconductor devices, is expected to be extended further towards the 32-nm and 22-nm node. A further increase of lens NA will not be possible but fortunately the shrink can be enabled with new resolution enhancement methods like source mask optimization (SMO) and double patterning techniques (DPT). These new applications lower the k1 dramatically and require very tight overlay control and CD control to be successful. In addition, overall cost per wafer needs to be lowered to make the production of semiconductor devices acceptable. For this ultimate era of optical lithography we have developed the next generation dual stage NXT:1950i immersion platform. This system delivers wafer throughput of 175 wafers per hour together with an overlay of 2.5nm. Several extensions are offered enabling 200 wafers per hour and improved imaging and on product overlay. The high productivity is achieved using a dual wafer stage with planar motor that enables a high acceleration and high scan speed. With the dual stage concept wafer metrology is performed in parallel with the wafer exposure. The free moving planar stage has reduced overhead during chuck exchange which also improves litho tool productivity. In general, overlay contributors are coming from the lithography system, the mask and the processing. Main contributors for the scanner system are thermal wafer and stage control, lens aberration control, stage positioning and alignment. The back-bone of the NXT:1950i enhanced overlay performance is the novel short beam fixed length encoder grid-plate positioning system. By eliminating the variable length interferometer system used in the previous generation scanners the sensitivity to thermal and flow disturbances are largely reduced. The alignment accuracy and the alignment sensitivity for process layers are improved with the SMASH alignment sensor. A high number of alignment marker pairs can be used without throughput loss, and

  2. Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm

    NASA Astrophysics Data System (ADS)

    Lin, Cheng-ming; Chang, Keh-wen; Lee, Ming-der; Loong, Wen-An

    1999-07-01

    Abstract-Five materials which are PdSixOy, CrAlxOy, SiNx, TiSixNy, and TiSixOyNz as absorptive shifters for attenuated phase-shifting mask in 193 nm wavelength lithography are presented. PdSixOy films were deposited by dual e-gun evaporation. CrAlxOy, TiSixNy and TiSixOyNz films were formed by plasma sputtering and SiNx films were formed with LPCVD. All of these materials are shown to be capable of achieving 4 percent - 15 percent transmittance in 193 nm with thickness that produce a 180 degrees phase shift. Under BCl3:Cl2 equals 14:70 sccm; chamber pressure 5 mtorr and RF power 1900W, the dry etching selectivity of TiSixNy over DQN positive resist and fused silica, were found to be 2:1 and 4,8:1 respectively. An embedded layer TiSixNy with 0.5 micrometers line/space was successfully patterned.

  3. Tellurite glass thin films on silica and polymer using UV (193 nm) pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Zhao, Zhanxiang; Jose, Gin; Steenson, Paul; Bamiedakis, Nikos; Penty, Richard V.; White, Ian H.; Jha, Animesh

    2011-03-01

    Erbium-doped tellurite glass thin films were deposited using excimer (193 nm) laser ablation onto two different types of substrates: silica and polymer-coated silica for engineering optical integrated active-passive devices. The deposition conditions were optimized for both substrates in order to produce high-quality rare-earth (Er3+) ion-doped glass thin films with low propagation loss. The optical and spectroscopic properties of the deposited films, namely transmittance, fluorescence, lifetime as well as refractive indices at 633 nm were measured and analysed in detail.

  4. Collateral damage-free debridement using 193nm ArF laser

    NASA Astrophysics Data System (ADS)

    Wynne, James J.; Felsenstein, Jerome M.; Trzcinski, Robert; Zupanski-Nielsen, Donna; Connors, Daniel P.

    2011-03-01

    Burn eschar and other necrotic areas of the skin and soft tissue are anhydrous compared to the underlying viable tissue. A 193 nm ArF excimer laser, emitting electromagnetic radiation at 6.4 eV at fluence exceeding the ablation threshold, will debride such necrotic areas. Because such radiation is strongly absorbed by aqueous chloride ions through the nonthermal process of electron photodetachment, debridement will cease when hydrated (with chloride ions) viable tissue is exposed, avoiding collateral damage to this tissue. Such tissue will be sterile and ready for further treatment, such as a wound dressing and/or a skin graft.

  5. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

    NASA Astrophysics Data System (ADS)

    Soltani, A.; Barkad, H. A.; Mattalah, M.; Benbakhti, B.; De Jaeger, J.-C.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; BenMoussa, A.; Giordanengo, B.; Hochedez, J.-F.

    2008-02-01

    Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.

  6. Novel topcoat materials with improved receding angles and dissolution properties for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Yun, Sang Geun; Lee, Jin Young; Yang, Young Soo; Shin, Seung Wook; Lee, Sung Jae; Kwon, Hyo Young; Cho, Youn Jin; Choi, Seung Jib; Choi, Sang Jun; Kim, Jong Seob; Chang, Tuwon

    2010-04-01

    A topcoat material plays a significant role in achieving technology nodes below 45 nm via ArF immersion lithography. Switching the exposure medium between the lens and the photoresist (PR) film from gas (air, n=1) to liquid (H2O, n=1.44) may lead to leaching of the polymer, the photoacid generator (PAG), or the solvent. These substances can contaminate the lens or cause bubbles, which can lead to defects during the patterning. Previously reported topcoat materials mainly use hydrophobic fluoro-compounds and carboxylic acids to provide high dissolution rates (DR) to basic developers as well as high receding contact angles (RCA). Recently, the demand for a new top-coat material has risen since current materials cause water-mark defects and decreases in scan speeds, due to insufficient RCA's. However, RCA and DR are in a trade-off relationship as an increase in RCA generally results in a lower DR. To overcome this, a novel polymer with high-fluorine content was synthesized to produce a topcoat material with improved DR (120 nm/s in 2.38 wt% TMAH) and RCA (>70°). In addition, a strategy to control the pattern profile according to needs of customers was found.

  7. Structural design of new alicyclic acrylate polymers with androstane moiety for 193-nm resist

    NASA Astrophysics Data System (ADS)

    Aoai, Toshiaki; Sato, Kenichiro; Kodama, Kunihiko; Kawabe, Yasumasa; Nakao, Hajime; Yagihara, Morio

    1999-06-01

    Synthesis of new alicyclic (meth)acrylate polymers containing androstane moieties, especially cholic acid derivatives, and their characteristics were investigated for 193nm single layer resists. Among the derivatives, a work of adhesion, Ohnishi and ring parameters were used as measures for the adhesion and the dry-etching resistance in this study. In the synthesis of the polymers, the use of 3- (beta) -methacryloyoxy-deoxycholic acid, which is the inverse configuration against the original 3-(alpha) -structure, was effective as a monomer, because the steric hindrance at 3- (alpha) -position degraded its polymerization ability. The polymers partially protected by acid labile groups showed a satisfactory adhesion, which was probably due to the hydrophilic hydroxyl group at the 12-position and the carboxyl group linked at the 17-position, and a good dry- etching resistance. On the lithographic imaging with these polymers, the reduction of the side reaction on the acid decomposition and also the control of the flexibility on the polymers largely affected their performance. THe adjustment of the Tg values of the polymers by the co-polymerization and the change of the polymer backbone from the methacrylate to acrylate structure performed well on imaging under 193nm exposure.

  8. Measurement of initial absorption of fused silica at 193nm using laser induced deflection technique (LID)

    NASA Astrophysics Data System (ADS)

    Schönfeld, Dörte; Klett, Ursula; Mühlig, Christian; Thomas, Stephan

    2008-01-01

    The ongoing development in microlithography towards further miniaturization of structures creates a strong demand for lens material with nearly ideal optical properties. Beside the highly demanding requirements on homogeneity and stress induced birefringence (SIB), low absorption is a key factor. Even a small absorption is associated with a temperature increase and results in thermally induced local variations of refractive index and SIB. This could affect the achievable resolution of the lithographic process. The total absorption of the material is composed of initial absorption and of absorption induced during irradiation. Thus, the optimization of both improves the lifetime of the material. In principal, it is possible to measure transmission and scattering with a suitable spectrometer assembly and calculate absorption from them. However, owing to the influence of sample surfaces and errors of measurement, these methods usually do not provide satisfactory results for highly light-transmissive fused silica. Therefore, it is most desirable to find a technique that is capable of directly measuring absorption coefficients in the range of (1...10)•10 -4 cm -1 (base 10) directly. We report our first results for fused silica achieved with the LID technique. Besides a fused silica grade designed for 193 nm applications, grades with higher absorption at 193 nm were measured to test the LID technique. A special focus was set on the possibility of measuring initial absorption without the influence of degradation effects.

  9. Demonstration of EDA flow for massively parallel e-beam lithography

    NASA Astrophysics Data System (ADS)

    Brandt, P.; Belledent, J.; Tranquillin, C.; Figueiro, T.; Meunier, S.; Bayle, S.; Fay, A.; Milléquant, M.; Icard, B.; Wieland, M.

    2014-03-01

    Today's soaring complexity in pushing the limits of 193nm immersion lithography drives the development of other technologies. One of these alternatives is mask-less massively parallel electron beam lithography, (MP-EBL), a promising candidate in which future resolution needs can be fulfilled at competitive cost. MAPPER Lithography's MATRIX MP-EBL platform has currently entered an advanced stage of development. The first tool in this platform, the FLX 1200, will operate using more than 1,300 beams, each one writing a stripe 2.2μm wide. 0.2μm overlap from stripe to stripe is allocated for stitching. Each beam is composed of 49 individual sub-beams that can be blanked independently in order to write in a raster scan pixels onto the wafer.

  10. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Conde, J. C.; Chiussi, S.; Serra, C.; González, P.

    2016-01-01

    193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3 μm diameter and around 25 nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240 mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2 μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.

  11. Three-dimensional deep sub-wavelength defect detection using λ = 193 nm optical microscopy.

    PubMed

    Barnes, Bryan M; Sohn, Martin Y; Goasmat, Francois; Zhou, Hui; Vladár, András E; Silver, Richard M; Arceo, Abraham

    2013-11-04

    Optical microscopy is sensitive both to arrays of nanoscale features and to their imperfections. Optimizing scattered electromagnetic field intensities from deep sub-wavelength nanometer scale structures represents an important element of optical metrology. Current, well-established optical methods used to identify defects in semiconductor patterning are in jeopardy by upcoming sub-20 nm device dimensions. A novel volumetric analysis for processing focus-resolved images of defects is presented using simulated and experimental examples. This new method allows defects as narrow as (16 ± 2) nm (k = 1) to be revealed using 193 nm light with focus and illumination conditions optimized for three-dimensional data analysis. Quantitative metrics to compare two-dimensional and three-dimensional imaging indicate possible fourfold improvements in sensitivity using these methods.

  12. Depth-of-focus (DoF) analysis of a 193nm superlens imaging structure.

    PubMed

    Shi, Zhong; Kochergin, Vladimir; Wang, Fei

    2009-10-26

    We present a design of a 193 nm superlens imaging structure to enable the printing of 20 nm features. Optical image simulations indicate that the 20 nm resolution is feasible for both the periodic grating feature and the two-slit feature. Nominal depth-of-focus (DoF) position for both features is identified through the image contrast calculations. Simulations show that the two features have a common nominal dose at the nominal DoF to resolve 20 nm critical dimension when a suitable dielectric material is placed between mask and superlens layer. A DoF of micro8 nm is shown to be obtainable for the 20 nm half-pitch grating feature while the respective DoF for the two-slit feature is less than 8 nm which potentially can be enhanced by employing existing lithographic resolution enhancement techniques.

  13. Controlling H atom production in the 193 nm laser photolysis of triethylarsenic

    NASA Astrophysics Data System (ADS)

    Xu, Xiaodong; Deshmukh, Subhash; Brum, Jeffrey L.; Koplitz, Brent

    1991-05-01

    We report on the production of atomic hydrogen subsequent to the 193 nm photolysis of triethylarsenic (TEAs) using an excimer laser. The H atoms are probed via two-photon (121.6+364.7 nm) ionization, and the resulting H atom Doppler profile at Lyman-α is presented. Photolysis power dependence studies demonstrate that substantial H atom formation occurs at relatively low laser powers. However, the H atom signal actually begins to diminish as the photolysis laser power is increased beyond ˜70 MW/cm2. Correlations with time-of-fight mass spectral data suggest that ion channels are being accessed. The possible mechanisms for TEAs excitation that lead to H atom formation/depletion are presented, and the implications of these observations on controlling carbon incorporation in the laser-enhanced growth of films of GaAs, AlGaAs, etc. are discussed.

  14. Three-body dissociations: The photodissociation of dimethyl sulfoxide at 193 nm

    SciTech Connect

    Blank, D.A.; North, S.W.; Stranges, D.

    1997-04-01

    When a molecule with two equivalent chemical bonds is excited above the threshold for dissociation of both bonds, how the rupture of the two bonds is temporally coupled becomes a salient question. Following absorption at 193 nm dimethyl sulfoxide (CH{sub 3}SOCH{sub 3}) contains enough energy to rupture both C-S bonds. This can happen in a stepwise (reaction 1) or concerted (reaction 2) fashion where the authors use rotation of the SOCH{sub 3} intermediate prior to dissociation to define a stepwise dissociation: (1) CH{sub 3}SOCH{sub 3} {r_arrow} 2CH{sub 3} + SO; (2a) CH{sub 3}SOCH{sub 3} {r_arrow} CH{sub 3} + SOCH{sub 3}; and (2b) SOCH{sub 3} {r_arrow} SO + CH{sub 3}. Recently, the dissociation of dimethyl sulfoxide following absorption at 193 nm was suggested to involve simultaneous cleavage of both C-S bonds on an excited electronic surface. This conclusion was inferred from laser induced fluorescence (LIF) and resonant multiphoton ionization (2+1 REMPI) measurements of the internal energy content in the CH{sub 3} and SO photoproducts and a near unity quantum yield measured for SO. Since this type of concerted three body dissociation is very interesting and a rather rare event in photodissociation dynamics, the authors chose to investigate this system using the technique of photofragment translational spectroscopy at beamline 9.0.2.1. The soft photoionization provided by the VUV undulator radiation allowed the authors to probe the SOCH{sub 3} intermediate which had not been previously observed and provided good evidence that the dissociation of dimethyl sulfoxide primarily proceeds via a two step dissociation, reaction 2.

  15. An AC phase measuring interferometer for measuring dn/dT of fused silica and calcium fluoride at 193 nm

    SciTech Connect

    Shagam, R.N.

    1998-09-01

    A novel method for the measurement of the change in index of refraction vs. temperature (dn/dT) of fused silica and calcium fluoride at the 193 nm wavelength has been developed in support of thermal modeling efforts for the development of 193 nm-based photolithographic exposure tools. The method, based upon grating lateral shear interferometry, uses a transmissive linear grating to divide a 193 nm laser beam into several beam paths by diffraction which propagate through separate identical material samples. One diffracted order passing through one sample overlaps the undiffracted beam from a second sample and forms interference fringes dependent upon the optical path difference between the two samples. Optical phase delay due to an index change from heating one of the samples causes the interference fringes to change sinusoidally with phase. The interferometer also makes use of AC phase measurement techniques through lateral translation of the grating. Results for several samples of fused silica and calcium fluoride are demonstrated.

  16. Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Truong, Hoa D.; Burns, Sean D.; Pfeiffer, Dirk; Huang, Wu-Song; Khojasteh, Mahmoud M.; Varanasi, P. Rao; Lercel, Mike

    2005-05-01

    Polysilsesquioxane-based 193 nm positive bilayer resists are described. In this design Si for etch resistance is placed in every repeat unit and acid-labile protected and acidic groups (and polar units) are in the side chain, allowing to incorporate each lithographically critical functionality in sufficient quantity. Fluoroalcohol is employed as an acid group instead of carboxylic acid because of its more attractive dissolution properties. Polymers were carefully analyzed by 19F, 13C, and 29Si NMR to determine composition and to quantify residual acetyl, silanol, and Q/T. Hydrogen-bonding between tertiary ester and fluoroalcohol in the polysilsesquioxanes was investigated by FT-IR and the effect of lactone incorporation on the thermal deprotection temperature elucidated. In order to better understand the dissolution behavior of exposed resist films, the silsesquioxane resist polymers were partially (ca. 30%) and fully deprotected in solution with acid and their dissolution kinetics investigated by using a quartz crystal microbalance (QCM). It has been found that the exposed areas of the silsesquioxane resists can have a very fast dissolution rate (Rmax) of >20,000 A/sec (or even >100,000 A/sec). Heating the fully deprotected model polymers to 150°C did not reduce the dissolution rate much, suggesting thermal condensation of silanol end groups is insignificant. Model deprotected polymers containing triphenylsulfonium nonaflate were exposed to 254 nm radiation, baked, and subjected to QCM measurements in order to determine whether or not acid-catalyzed silanol condensation would reduce the dissolution rate. A combination of high dose and high temperature bake resulted in significant reduction of the dissolution rate in the silsesquioxane polymer containing a small trifluoroalcohol. However, the dissolution behavior of the polymer bearing a bulky norbornene hexafluoroalcohol was unaffected by exposure and bake. Chemical and development contrast curves were generated

  17. Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

    SciTech Connect

    Pargon, E.; Menguelti, K.; Martin, M.; Bazin, A.; Joubert, O.; Lill, T.

    2009-05-01

    In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to the so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, and ellipsometry). By using windows with different cutoff wavelengths patched on the photoresist film, the role of the plasma vacuum ultraviolet (VUV) light on the resist modifications is clearly outlined and distinguished from the role of radicals and ions from the plasma. The analyses reveal that both plasma cure treatments induce severe surface and bulk chemical modifications of the resist films. The synergistic effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm), while the plasma VUV light (110-210 nm) is clearly identified as being responsible for ester and lactone group removal from the resist bulk. As the resist modification depth depends strongly on the wavelength penetration into the material, it is found that HBr plasma cure that emits near 160-170 nm can chemically modify the photoresist through its entire thickness (240 nm), while the impact of Ar plasmas emitting near 100 nm is more limited. In the case of HBr cure treatment, Raman and ellipsometry analyses reveal the formation of sp{sup 2} carbon atoms in the resist bulk, certainly thanks to hydrogen diffusion through the resist film assisted by the VUV plasma light.

  18. Photodissociation of the Propargyl (C3D3) Radicals at 248 nm and 193 nm

    SciTech Connect

    Neumark., D.M.; Crider, P.E.; Castiglioni, L.; Kautzman, K.K.

    2009-01-21

    The photodissociation of perdeuterated propargyl (D{sub 2}CCCD) and propynyl (D{sub 3}CCC) radicals was investigated using fast beam photofragment translational spectroscopy. Radicals were produced from their respective anions by photodetachment at 540 nm and 450 nm (below and above the electron affinity of propynyl). The radicals were then photodissociated by 248 nm or 193 nm light. The recoiling photofragments were detected in coincidence with a time- and position-sensitive detector. Three channels were observed: D{sub 2} loss, CD + C{sub 2}D{sub 2}, and CD{sub 3} + C{sub 2}. Obervation of the D loss channel was incompatible with this experiment and was not attempted. Our translational energy distributions for D{sub 2} loss peaked at nonzero translational energy, consistent with ground state dissociation over small (< 1 eV) exit barriers with respect to separated products. Translational energy distributions for the two heavy channels peaked near zero kinetic energy, indicating dissociation on the ground state in the absence of exit barriers.

  19. The stability of allyl radicals following the photodissociation of allyl iodide at 193 nm.

    SciTech Connect

    Fan, H.; Pratt, S. T.; Chemistry

    2006-01-01

    The photodissociation of allyl iodide (C{sub 3}H{sub 5}I) at 193 nm was investigated by using a combination of vacuum-ultraviolet photoionization of the allyl radical, resonant multiphoton ionization of the iodine atoms, and velocity map imaging. The data provide insight into the primary C-I bond fission process and into the dissociative ionization of the allyl radical to produce C{sub 3}H{sup 3+}. The experimental results are consistent with the earlier results of Szpunar et al. [J. Chem. Phys. 119, 5078 (2003)], in that some allyl radicals with internal energies higher than the secondary dissociation barrier are found to be stable. This stability results from the partitioning of available energy between the rotational and vibrational degrees of freedom of the radical, the effects of a centrifugal barrier along the reaction coordinate, and the effects of the kinetic shift in the secondary dissociation of the allyl radical. The present results suggest that the primary dissociation of allyl iodide to allyl radicals plus I*({sup 2}P{sub 1/2}) is more important than previously suspected.

  20. Product channels in the 193-nm photodissociation of HCNO (fulminic acid)

    NASA Astrophysics Data System (ADS)

    Feng, Wenhui; Hershberger, John F.

    2016-06-01

    IR diode laser spectroscopy was used to detect the products of HCNO (fulminic acid) photolysis at 193 nm. Six product channels are energetically possible at this photolysis wavelength: O + HCN, H + NCO/CNO, CN + OH, CO + NH, NO + CH and HNCO. In some experiments, isotopically labeled 15N18O, C2D6 or C6H12 reagents were included into the photolysis mixture in order to suppress and/or redirect possible secondary reactions. HCN, OC18O, 15N15NO, CO, DCN and HNCO molecules were detected upon laser photolysis of HCNO/reagents/buffer gas mixtures. Analysis of the yields of product molecules leads to the following photolysis quantum yields: ϕ1a (O + HCN) = 0.38 ± 0.04, ϕ1b (H + (NCO)) = 0.07 ± 0.02, ϕ1c (CN + OH) = 0.24 ± 0.03, ϕ1d (CO + NH(a1Δ)) < 0.22 ± 0.1, ϕ1e (HNCO) = 0.02 ± 0.01 and ϕ1f (CH + NO) = 0.21 ± 0.1, respectively.

  1. Ion Implant Enabled 2x Lithography

    NASA Astrophysics Data System (ADS)

    Martin, Patrick M.; Godet, Ludovic; Cheung, Andrew; de Cock, Gael; Hatem, Chris

    2011-01-01

    Ion implantation has many applications in microelectronics beyond doping. The broad range of species available combined with the ability to precisely control dose, angle, and energy offers compelling advantages for use in precision material modification. The application to lithography has been reported elsewhere. Integrating ion implantation into the lithography process enables scaling the feature size requirements beyond the 15 nm node with a simplified double patterning sequence. In addition, ion implant may be used to remove line edge roughness, providing tremendous advantages to meet extreme lithography imaging requirements and provide additional device stability. We examine several species (e.g. Si, Ar, etc.) and the effect of energy and impact angle on several commercially available 193 nm immersion photoresists using a Varian VIISta® single wafer high current ion implanter. The treated photoresist will be evaluated for stability in an integrated double patterning application with ion implant used to freeze the primary image. We report on critical dimension impact, pattern integrity, optical property modification, and adhesion. We analyze the impact of line edge roughness improvement beyond the work of C. Struck including the power spectral distribution. TGA and FTIR Spectroscopy results for the implanted photoresist materials will also be included.

  2. Improving vacuum-UV (VUV) photolysis of organic compounds in water with a phosphor converted xenon excimer lamp emitting at 193 nm.

    PubMed

    Schulze-Hennings, U; Pötschke, L; Wietor, C; Bringmann, S; Braun, N; Hayashi, D; Linnemann, V; Pinnekamp, J

    A novel vacuum ultraviolet excimer lamp emitting light at 193 nm was used to investigate the degradation of organic micropollutants in ultrapure water and wastewater treatment plant (WWTP) effluent. Overall, light at 193 nm proved to be efficient to degrade the investigated micropollutants (diclofenac, diatrizoic acid, sulfamethoxazole). Experiments with WWTP effluent proved the ability of radiation at 193 nm to degrade micropollutants which are hardly removed with commonly used oxidation technologies like ozonation (diatrizoic acid, ethylenediaminetetraacetic acid, perfluorooctanoic acid, and perfluorooctanesulfonic acid).

  3. Ecology and high-durability injection locked laser with flexible power for double-patterning ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Umeda, Hiroshi; Tsushima, Hiroaki; Watanabe, Hidenori; Tanaka, Satoshi; Yoshino, Masaya; Matsumoto, Shinich; Tanaka, Hiroshi; Kurosu, Akihiko; Kawasuji, Yasufumi; Matsunaga, Takashi; Fujimoto, Junichi; Mizoguchi, Hakaru

    2011-04-01

    ArF immersion technology has been used widely in volume production for 45nm node. For 32nm node and beyond, double patterning technology with ArF immersion lithography is considered to be the main stream solution until EUV is ready. Our target is to reduce CoO(Cost of ownership) and we aim to develop for ecology and high durability laser. We will introduce the latest performance data of the laser built for ArF immersion lithography under the EcoPhoton concept. Eco-photon concept: -CoC (Cost of Consumable) -CoD (Cost of Downtime) -CoE(Cost of Energy & Environment) We have developed flexible and high power injection-lock ArF excimer laser for double patterning, GT62A-1SxE (Max90W/6000Hz/Flexible power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform5). A number of innovative and unique technologies are implemented on GT62A-1SxE. In addition, GT62A-1SxE is the laser matching the enhancement technology of advanced illumination systems. For example, in order to provide illumination power optimum for resist sensitivity, it has extendable power from 60W to 90W. We have confirmed durability under these concept with the regulated operation condition with flexible power 60-90W. We show the high durability data of GT62A-1SxE with Eco-Photon concept. In addition to the results the field reliability and availability of our Giga Twin series (GT6XA). We also show technologies which made these performances and its actual data. A number of innovative and unique technologies are implemented on GT62A.

  4. Detection of OH radical in laser induced photodissociation of tetrahydrofuran at 193 nm

    NASA Astrophysics Data System (ADS)

    SenGupta, Sumana; Upadhyaya, Hari P.; Kumar, Awadhesh; Naik, Prakash D.; Bajaj, Paramanand

    2005-03-01

    On excitation at 193nm, tetrahydrofuran (THF) generates OH as one of the photodissociation products. The nascent energy state distribution of the OH radical was measured employing laser induced fluorescence technique. It is observed that the OH radical is formed mostly in the ground vibrational level, with low rotational excitation (˜3%). The rotational distribution of OH (v″=0,J) is characterized by rotational temperature of 1250±140K. Two spin-orbit states, Π3/22 and Π1/22 of OH are populated statistically. But, there is a preferential population in Λ doublet levels. For all rotational numbers, the Π+2(A') levels are preferred to the Π-2(A″) levels. The relative translational energy associated with the photoproducts in the OH channel is calculated to be 17.4±2.2kcalmol-1, giving an fT value of ˜36%, and the remaining 61% of the available energy is distributed in the internal modes of the other photofragment, i.e., C4H7. The observed distribution of the available energy agrees well with a hybrid model of energy partitioning, predicting an exit barrier of ≈16kcalmol-1. Based on both ab initio molecular orbital calculations and experimental results, a plausible mechanism for OH formation is proposed. The mechanism involves three steps, the C-O bond cleavage of the ring, H atom migration to the O atom, and the C-OH bond scission, in sequence, to generate OH from the ground electronic state of THF. Besides this high energy reaction channel, other photodissociation channels of THF have been identified by detecting the stable products, using Fourier transform infrared and gas chromatography.

  5. Photoinitiated decomposition of substituted ethylenes: The photodissociation of vinyl chloride and acrylonitrile at 193 nm

    SciTech Connect

    Blank, D.A.; Suits, A.G.; Lee, Y.T.

    1997-04-01

    Ethylene and its substituted analogues (H{sub 2}CCHX) are important molecules in hydrogen combustion. As the simplest {pi}-bonded hydrocarbons these molecules serve as prototypical systems for understanding the decomposition of this important class of compounds. The authors have used the technique of photofragment translational spectroscopy at beamline 9.0.2.1 to investigate the dissociation of vinyl chloride (X=Cl) and acrylonitrile (X=CN) following absorption at 193 nm. The technique uses a molecular beam of the reactant seeded in helium which is crossed at 90 degrees with the output of an excimer laser operating on the ArF transition, 193.3 nm. The neutral photoproducts which recoil out of the molecular beam travel 15.1 cm where they are photoionized by the VUV undulator radiation, mass selected, and counted as a function of time. The molecular beam source is rotatable about the axis of the dissociation laser. The authors have directly observed all four of the following dissociation channels for both systems: (1) H{sub 2}CCHX {r_arrow} H + C{sub 2}H{sub 2}X; (2) H{sub 2}CCHX {r_arrow} X + C{sub 2}H{sub 3}; (3) H{sub 2}CCHX {r_arrow} H{sub 2} + C{sub 2}HX; and (4) H{sub 2}CCHX {r_arrow} HX + C{sub 2}H{sub 2}. They measured translational energy distributions for all of the observed channels and measured the photoionization onset for many of the photoproducts which provided information about their chemical identity and internal energy content. In the case of acrylonitrile, selective product photoionization provided the ability to discriminate between channels 2 and 4 which result in the same product mass combination.

  6. Photolysis of Pure Solid O3 and O2 Films at 193nm

    NASA Technical Reports Server (NTRS)

    Raut, U.; Loeffler, M. J.; Fama, M.; Baragiola, R. A.

    2011-01-01

    We studied quantitatively the photochemistry of solid O3 and O2 films at 193 nm and 22 K with infrared spectroscopy and microgravimetry. Photolysis of pure ozone destroyed O3, but a small amount of ozone remained in the film at high fluence. Photolysis of pure O2 produced O3 in an amount that increased with photon fluence to a stationary level. For both O2 and O3 films, the O3:O2 ratio at large fluences is ?0.07, about two orders of magnitude larger than those obtained in gas phase photolysis. This enhancement is attributed to the increased photodissociation of O2 due to photoabsorption by O2 dimers, a process significant at solid-state densities. We obtain initial quantum yield for ozone synthesis from solid oxygen, phi (O3) = 0.24 0.06, and quantum yields for destruction of O3 and O2 in their parent solids, phi(-O3) = 1.0 0.2 and phi(-O2) = 0.36 0.1. Combined with known photoabsorption cross sections, we estimate probabilities for geminate recombination of 0.5 0.1 for O3 fragments and 0.88 0.03 for oxygen atoms from O2 dissociation. Using a single parameter kinetic model, we deduce the ratio of reaction cross sections for an O atom with O2 vs. O3 to be 0.1 0.2. The general good agreement of the model with the data suggests the validity of the central assumption of efficient energy and spin relaxation of photofragments in the solid prior to their reactions with other species.

  7. Photodissociation of vinyl cyanide at 193 nm: Nascent product distributions of the molecular elimination channels

    SciTech Connect

    Wilhelm, Michael J.; Nikow, Matthew; Letendre, Laura; Dai Hailung

    2009-01-28

    The photodissociation dynamics of vinyl cyanide (H{sub 2}CCHCN, acrylonitrile) and deuterated vinyl cyanide (D{sub 2}CCDCN) at 193 nm are examined using time-resolved Fourier transform infrared emission spectroscopy. Prior photofragment translational spectroscopy studies [D. A. Blank et al., J. Chem. Phys. 108, 5784 (1998)] of the dissociation have observed the presence of four main dissociation channels; two molecular and two radical in nature. However, with the exception of a<0.01 quantum yield determined for the CN radical loss channel, the branching ratios of the remaining three elimination channels were not measured. The time-resolved emission spectra, including those from the deuterated samples, revealed the presence of acetylene, hydrogen cyanide (HCN), as well as the energetically less stable isomer hydrogen isocyanide (HNC). Acetylene is found in two distinct energetic distributions, suggesting that both three- and four-centered elimination reactions are occurring significantly in the dissociation. In contrast to prior ab initio studies that have suggested the dominant nature of the three-center elimination of molecular hydrogen (H{sub 2}) and cyanovinylidene (:C=CHCN), we find this reaction channel to be of little importance as there is no evidence to support any significant presence of rovibrationally excited cyanoacetylene. Spectral modeling of the product distributions allows for the first experimental determination of the relative occurrence of the three-centered (resulting in HCN+vinylidene) versus four-centered (HNC+acetylene) elimination channels as 3.34 to 1.00, in contrast to the previously calculated value of 126:1. Rice-Ramsperger-Kassel-Marcus analysis depicts that the transition state energy of the four-centered reaction should be about 10 kcal mole{sup -1} lower than the three-centered reaction.

  8. Flexible and reliable high power injection locked laser for double exposure and double patterning ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Yoshino, Masaya; Umeda, Hiroshi; Tsushima, Hiroaki; Watanabe, Hidenori; Tanaka, Satoshi; Matsumoto, Shinich; Onose, Takashi; Nogawa, Hiroyuki; Kawasuji, Yasufumi; Matsunaga, Takashi; Fujimoto, Junichi; Mizoguchi, Hakaru

    2010-04-01

    ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.30pm) with ultra line-narrowed spectrum and stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field reliability data of our lasers used in the ArF immersion segment since Q4 2006. In this report we show field reliability data of our GigaTwin series - twin chamber ArF laser products. GigaTwin series have high reliability. The availability that exceeds 99.5% proves the reliability of the GigaTwin series. We have developed tunable and high power injection-lock ArF excimer laser for double patterning, GT62A (Max90W/6000Hz/Tunable power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform. A number of innovative and unique technologies are implemented on GT62A. - Support the latest illumination optical system - Support E95 stability and adjustability - Reduce total cost (Cost of Consumables, Cost of Downtime and Cost of Energy & Environment)

  9. INTERACTION OF LASER RADIATION WITH MATTER: Rearrangement of a phosphosilicate glass network induced by the 193-nm radiation

    NASA Astrophysics Data System (ADS)

    Larionov, Yu V.; Sokolov, V. O.; Plotnichenko, V. G.

    2008-10-01

    The IR absorption and Raman spectra of phosphosilicate glass (PSG) are measured during its exposure to radiation at a wavelength of 193 nm. The obtained data demonstrate the complicated rearrangement dynamics of the glass network around phosphor atoms and of the glass network as a whole. The experimental dependences are explained by the model of the PSG network based on the concepts of the theory of rigidity percolation.

  10. Current status of water immersion lithography and prospect of higher index method

    NASA Astrophysics Data System (ADS)

    Owa, Soichi; Nakano, Katsushi; Nagasaka, Hiroyuki; Kohno, Hirotaka; Ohmura, Yasuhiro; McCallum, Martin

    2007-02-01

    In this paper we will present the progress that has been made in the area of tool development for ArF Immersion. The local fill nozzle design adopted by Nikon has been implemented in the world's first production Immersion tools, the S609B and S610C, to produce bubble free and low defect imaging. Defect, imaging and overlay results from the S609B are presented showing manufacturing level results. First imaging results from the 1.30 NA S610C are also reported showing the tools capability to image at the 45nm node and beyond. Beyond 1.30 NA it is likely that high index materials will be required. We examine the prospects for taking immersion to lens NA's of around 1.55 with second generation fluids and even 1.70 NA with third generation fluids. However, it cannot be forgotten that this also requires new glass materials for lenses; the status of these will also be discussed. It is likely that high index immersion, if implemented, will not be in time for most customers' roadmaps, in the interim it is likely that Double Patterning (DP) will be used with potential cost penalites. The potential applications of this technique will be briefly discussed.

  11. The ArF laser for the next-generation multiple-patterning immersion lithography supporting green operations

    NASA Astrophysics Data System (ADS)

    Ishida, Keisuke; Ohta, Takeshi; Miyamoto, Hirotaka; Kumazaki, Takahito; Tsushima, Hiroaki; Kurosu, Akihiko; Matsunaga, Takashi; Mizoguchi, Hakaru

    2016-03-01

    Multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy tighter leading edge device requirements. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. Especially, the dependence on rare gases, such as Neon and Helium, is becoming a critical issue for high volume manufacturing process. The new ArF excimer laser, GT64A has been developed to cope with the reduction of operational costs, the prevention against rare resource shortage and the improvement of device yield in multiple-patterning lithography. GT64A has advantages in efficiency and stability based on the field-proven injection-lock twin-chamber platform (GigaTwin platform). By the combination of GigaTwin platform and the advanced gas control algorithm, the consumption of rare gases such as Neon is reduced to a half. And newly designed Line Narrowing Module can realize completely Helium free operation. For the device yield improvement, spectral bandwidth stability is important to increase image contrast and contribute to the further reduction of CD variation. The new spectral bandwidth control algorithm and high response actuator has been developed to compensate the offset due to thermal change during the interval such as the period of wafer exchange operation. And REDeeM Cloud™, new monitoring system for managing light source performance and operations, is on-board and provides detailed light source information such as wavelength, energy, E95, etc.

  12. Enabling high volume manufacturing of double patterning immersion lithography with the XLR 600ix ArF light source

    NASA Astrophysics Data System (ADS)

    Rokitski, Rostislav; Fleurov, Vladimir; Bergstedt, Robert; Ye, Hong; Rafac, Robert; Jacques, Robert; Trintchouk, Fedor; Ishihara, Toshihiko; Rao, Rajasekhar; Cacouris, Theodore; Brown, Daniel; Partlo, William

    2009-03-01

    Deep ultraviolet (DUV) lithography improvements have been focused on two paths: further increases in the effective numerical aperture (NA) beyond 1.3, and double patterning (DP). High-index solutions for increasing the effective NA have not gained significant momentum due to several technical factors, and have been eclipsed by an aggressive push to make DP a high-volume manufacturing solution. The challenge is to develop a cost-effective solution using a process that effectively doubles the lithography steps required for critical layers, while achieving a higher degree of overlay performance. As a result, the light source requirements for DP fall into 3 main categories: (a) higher power to enable higher throughput on the scanner, (b) lower operating costs to offset the increased number of process steps, and (c) high stability of optical parameters to support more stringent process requirements. The XLR 600i (6kHz, 90W @15mJ) was introduced last year to enable DP by leveraging the higher performance and lower operating costs of the ring architecture XLR 500i (6kHz, 60W @10mJ) platform currently used for 45nm immersion lithography in production around the world. In February 2009, the XLR 600ix was introduced as a 60/90W switchable product to provide flexibility in the transition to higher power requirements as scanner capabilities are enhanced. The XLR 600ix includes improved optics materials to meet reliability requirements while operating at higher internal fluences. In this paper we will illustrate the performance characteristics during extended testing. Examples of performance include polarization stability, divergence and pointing stability, which enable consistent pupil fill under extreme illumination conditions, as well as overall thermal stability which maintains constant beam performance under large changes in laser operating modes. Furthermore, the unique beam uniformity characteristics that the ring architecture generates result in lower peak energy

  13. The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Neutral atomic zinc and oxygen emission

    SciTech Connect

    Kahn, E. H.; Langford, S. C.; Dickinson, J. T.; Boatner, Lynn A

    2013-01-01

    We report mass-resolved time-of-flight measurements of neutral particles from the surface of single-crystal ZnO during pulsed 193-nm irradiation at laser fluences below the threshold for avalanche breakdown. The major species emitted are atomic Zn and O. We examine the emissions of atomic Zn as a function of laser fluence and laser exposure. Defects at the ZnO surface appear necessary for the detection of these emissions. Our results suggest that the production of defects is necessary to explain intense sustained emissions at higher fluence. Rapid, clean surface etching and high atomic zinc kinetic energies seen at higher laser fluences are also discussed.

  14. Detection of sodium and potassium in single human red blood cells by 193-nm laser ablative sampling: a feasibility demonstration.

    PubMed

    Ng, C W; Cheung, N H

    2000-01-01

    The feasibility of quantifying sodium and potassium in single human erythrocytes was demonstrated by spectrochemical analysis of emissions from plasmas produced by 193-nm laser ablation of blood cells confined in a sheath flow. In one scheme, single blood cells that happened to be in the ablation volume were sampled. In another scheme, individual blood cells were first sighted and then synchronously ablated downstream. Plasma emission spectra of single ablated cells were captured, and the ratios of the analyte line intensity to the root-mean-square fluctuation of the continuum background were measured to be about 18 for sodium and 30 for potassium.

  15. Statistical Examination of the a and a + 1 Fragment Ions from 193 nm Ultraviolet Photodissociation Reveals Local Hydrogen Bonding Interactions

    NASA Astrophysics Data System (ADS)

    Morrison, Lindsay J.; Rosenberg, Jake A.; Singleton, Jonathan P.; Brodbelt, Jennifer S.

    2016-09-01

    Dissociation of proteins and peptides by 193 nm ultraviolet photodissociation (UVPD) has gained momentum in proteomic studies because of the diversity of backbone fragments that are produced and subsequent unrivaled sequence coverage obtained by the approach. The pathways that form the basis for the production of particular ion types are not completely understood. In this study, a statistical approach is used to probe hydrogen atom elimination from a + 1 radical ions, and different extents of elimination are found to vary as a function of the identity of the C-terminal residue of the a product ions and the presence or absence of hydrogen bonds to the cleaved residue.

  16. Combining in-situ lithography with 3D printed solid immersion lenses for single quantum dot spectroscopy

    PubMed Central

    Sartison, Marc; Portalupi, Simone Luca; Gissibl, Timo; Jetter, Michael; Giessen, Harald; Michler, Peter

    2017-01-01

    In the current study, we report on the deterministic fabrication of solid immersion lenses (SILs) on lithographically pre-selected semiconductor quantum dots (QDs). We demonstrate the combination of state-of-the-art low-temperature in-situ photolithography and femtosecond 3D direct laser writing. Several QDs are pre-selected with a localization accuracy of less than 2 nm with low-temperature lithography and three-dimensional laser writing is then used to deterministically fabricate hemispherical lenses on top of the quantum emitter with a submicrometric precision. Due to the printed lenses, the QD light extraction efficiency is enhanced by a factor of 2, the pumping laser is focused more, and the signal-to-noise ratio is increased, leading to an improved localization accuracy of the QD to well below 1 nm. Furthermore, modifications of the QD properties, i.e. strain and variation of internal quantum efficiency induced by the printed lenses, are also reported. PMID:28057941

  17. Combining in-situ lithography with 3D printed solid immersion lenses for single quantum dot spectroscopy

    NASA Astrophysics Data System (ADS)

    Sartison, Marc; Portalupi, Simone Luca; Gissibl, Timo; Jetter, Michael; Giessen, Harald; Michler, Peter

    2017-01-01

    In the current study, we report on the deterministic fabrication of solid immersion lenses (SILs) on lithographically pre-selected semiconductor quantum dots (QDs). We demonstrate the combination of state-of-the-art low-temperature in-situ photolithography and femtosecond 3D direct laser writing. Several QDs are pre-selected with a localization accuracy of less than 2 nm with low-temperature lithography and three-dimensional laser writing is then used to deterministically fabricate hemispherical lenses on top of the quantum emitter with a submicrometric precision. Due to the printed lenses, the QD light extraction efficiency is enhanced by a factor of 2, the pumping laser is focused more, and the signal-to-noise ratio is increased, leading to an improved localization accuracy of the QD to well below 1 nm. Furthermore, modifications of the QD properties, i.e. strain and variation of internal quantum efficiency induced by the printed lenses, are also reported.

  18. Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Burdt, R.; Thornes, J.; Duffey, T.; Bibby, T.; Rokitski, R.; Mason, E.; Melchior, J.; Aggarwal, T.; Haran, D.; Wang, J.; Rechtsteiner, G.; Haviland, M.; Brown, D.

    2014-03-01

    Semiconductor market demand for improved performance at lower cost continues to drive enhancements in excimer light source technologies. Increased output power, reduced variability in key light source parameters, and improved beam stability are required of the light source to support immersion lithography, multi-patterning, and 450mm wafer applications in high volume semiconductor manufacturing. To support future scanner needs, Cymer conducted a technology demonstration program to evaluate the design elements for a 120W ArFi light source. The program was based on the 90W XLR 600ix platform, and included rapid power switching between 90W and 120W modes to potentially support lot-to-lot changes in desired power. The 120W requirements also included improved beam stability in an exposure window conditionally reduced by 20%. The 120W output power is achieved by efficiency gains in system design, keeping system input power at the same level as the 90W XLR 600ix. To assess system to system variability, detailed system testing was conducted from 90W - 120W with reproducible results.

  19. The next-generation ArF excimer laser for multiple-patterning immersion lithography with helium free operation

    NASA Astrophysics Data System (ADS)

    Miyamoto, Hirotaka; Kumazaki, Takahito; Tsushima, Hiroaki; Kurosu, Akihiko; Ohta, Takeshi; Matsunaga, Takashi; Mizoguchi, Hakaru

    2016-03-01

    Multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy tighter leading edge device requirements. A new ArF excimer laser, GT64A has been developed to cope with the prevention against rare resource shortage and the reduction of operational costs. GT64A provides the sophisticated technologies which realize the narrow spectral bandwidth with helium free operation. A helium gas purge has usually been employed due to the low refractive index variation with temperature rises within a line narrowing module(LNM). Helium is a non-renewable resource and the world's reserves have been running out. Nitrogen gas with an affordable price has been used as an alternative purge gas of helium on the restrictive condition of low thermal loads. However, the refractive index variation of nitrogen gas is approximately ten times more sensitive to temperature rises than that of helium, and broadens a spectral bandwidth in the high duty cycle operations. The new LNM design enables heat effect in laser shooting at optical elements and mechanical components in the vicinity of an optical path to be lower. This reduces thermal wavefront deformation of a laser beam without helium gas purge within LNM, and narrows a spectrum bandwidth without helium purge. Gigaphoton proved that the new LNM enabled E95 bandwidth without control to improve a lot with nitrogen purge.

  20. Patterning 45nm flash/DRAM contact hole mask with hyper-NA immersion lithography and optimized illumination

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Van Den Broeke, Doug; Hsu, Stephen; Park, Sangbong; Berger, Gabriel; Coskun, Tamer; de Vocht, Joep; Corcoran, Noel; Chen, Fung; van der Heijden, Eddy; Finders, Jo; Engelen, Andre; Socha, Robert

    2006-03-01

    Patterning contact-hole mask for Flash/DRAM is probably one of the most challenging tasks for design rule below 50nm due to the extreme low-k I printing conditions common in the memory designs. When combined with optical proximity corrections (OPC) to the mask, using optimized illumination has become a viable part of the production lithography process for 65nm node. At k I<0.31, both resolution and imaging contrast can become severely limited by some of the current imaging tools with NA<0.85 and using standard illumination sources. Hyper-NA immersion lithography increases the process latitude and is therefore expected to become more indispensable for manufacturing under extreme low-k I conditions for sub-50nm design rule. In this work, we describe our process optimization approach for patterning Flash/DRAM contact-hole patterns with 130nm, 120nm, and smaller minimum pitch design rules. Here we use 6% attPSM mask for simulation and actual exposure in ASML XT 1400i (NA=0.93) and 1700i (NA=1.2) respectively. We begin with the illumination source optimization using full vector high-NA calculation (VHNA) with production resist stack and all manufacturability requirements for the source shaping diffractive optical element (DOE) are accounted for during the source optimization. Using the optimized source, IML TM technology based scattering bars (SB) placement together with model based OPC (MOPC) are applied to the original contact-hole design. In-focus printing and process latitude simulations are used to gauge the performance and manufacturability of the final optimized process, which includes the optimized mask, optimized source and required imaging settings. Our results show that for the 130nm pitch Flash contact-hole patterns, on ASML XT 1400i at NA=0.93, both optimized illumination source and immersion lithography are necessary in order to achieve manufacturability. The worst-case depth of focus (DOF) before SB and MOPC is 100-130nm at 6% EL, without common process

  1. XLR 500i: recirculating ring ArF light source for immersion lithography

    NASA Astrophysics Data System (ADS)

    Brown, D. J. W.; O'Keeffe, P.; Fleurov, V. B.; Rokitski, R.; Bergstedt, R.; Fomenkov, I. V.; O'Brien, K.; Farrar, N. R.; Partlo, W. N.

    2007-03-01

    As Argon Fluoride (ArF) lithography moves into high volume production, ArF light sources need to meet performance requirements beyond the traditional drivers of power and bandwidth. The first key requirement is a continuous decrease in Cost of Ownership (CoO) where the industry requirement is for reduction in ArF CoO in line with the historical cost reduction demonstrated for Krypton Fluoride (KrF) light sources. A second requirement is improved light source performance stability. As CD control requirements shrink, following the ITRS roadmap, all process parameters which affect CD variation need tighter control. In the case of the light source, these include improved control of bandwidth, pulse energy stability and wavelength. In particular, CD sensitivity to exposure dose has become a serious challenge for device processing and improvements to laser pulse energy stability can contribute to significantly better dose control. To meet these performance challenges Cymer has designed a new dual chamber laser architecture. The Recirculating Ring design requires 10X less energy from the Master Oscillator (MO). This new configuration enables the MO chamber lifetime to reach that of the power amplifier chamber at around 30Bp. In addition, other optical modules in the system such as the line narrowing module experience lower light intensity, ensuring even longer optics lifetime. Furthermore, the Recirculating Ring configuration operates in much stronger saturation. MO energy instabilities are reduced by a factor of 9X when passed through the Ring. The output energy stability exhibits the characteristics of a fully saturated amplifier and pulse energy stability improvement of 1.5X is realized. This performance enables higher throughput scanner operation with enhanced dose control. The Recirculating Ring technology will be introduced on the XLR 500i, Cymer's fifth-generation dual chamber-based light source built on the production-proven XLA platform. This paper will describe

  2. New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins

    NASA Astrophysics Data System (ADS)

    Rushkin, Ilya L.; Houlihan, Francis M.; Kometani, Janet M.; Hutton, Richard S.; Timko, Allen G.; Reichmanis, Elsa; Nalamasu, Omkaram; Gabor, Allen H.; Medina, Arturo N.; Slater, Sydney G.; Neisser, Mark O.

    1999-06-01

    A series of new polymers for 193 nm single layer resist based on maleic anhydride/cycloolefin systems with minimum amount of acrylate units were synthesized. In order to minimize the acrylate content, the cycloolefin moiety of the polymers was functionalized with side groups designed to either promotes adhesion to silicon substrate and/or impart the imaging functionality. All polymers were prepared by free-radical polymerization in moderate to high yields and were characterized by variety of techniques. The initial lithographic evaluation of the new resists was carried out. It was found that acrylates can be successfully replaced with appropriately substituted cycloolefins to provide good resolution. The etch resistance of the new materials generally improves with increase in cycloolefin content. The Onishi and Kunz type plots will be discussed.

  3. Collision-induced desorption in 193-nm photoinduced reactions in (O{sub 2}+CO) adlayers on Pt(112)

    SciTech Connect

    Han Song; Ma Yunsheng; Matsushima, Tatsuo

    2005-09-01

    The spatial distribution of desorbing O{sub 2} and CO{sub 2} was examined in 193-nm photoinduced reactions in O{sub 2}+CO adlayers on stepped Pt (112)=[(s)3(111)x(001)]. The O{sub 2} desorption collimated in inclined ways in the plane along the surface trough, confirming the hot-atom collision mechanism. In the presence of CO(a), the product CO{sub 2} desorption also collimated in an inclined way, whereas the inclined O{sub 2} desorption was suppressed. The inclined O{sub 2} and CO{sub 2} desorption is explained by a common collision-induced desorption model. At high O{sub 2} coverage, the CO{sub 2} desorption collimated closely along the (111) terrace normal.

  4. 120W ArF laser with high-wavelength stability and efficiency for the next-generation multiple-patterning immersion lithography

    NASA Astrophysics Data System (ADS)

    Ohta, Takeshi; Ishida, Keisuke; Kumazaki, Takahito; Tsushima, Hiroaki; Kurosu, Akihiko; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2015-03-01

    The new ArF Immersion Laser, GT64A has been developed to support the next generation multiple-patterning process. It offers the industry's highest output power of 120W with high stability and efficiency. 120W output power with auto-adjusting function enables to meet the requirements of various processes and makes higher-throughput possible even at 450mm-wafers. The increased wavelength stability and bandwidth stability can further improve overlay accuracy and CD error required for the next generation multiple-patterning lithography. Advanced gas control algorithm reduces the consumption of rare gases such as neon to a half. Helium-free operation is also under development to cope with the unstable supply of helium gases worldwide. New advanced wavelength control and bandwidth control algorithm has been developed to meet tighter stability requirement for the next generation multiple-patterning lithography.

  5. Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

    SciTech Connect

    Brihoum, M.; Ramos, R.; Menguelti, K.; Cunge, G.; Pargon, E.; Joubert, O.

    2013-01-07

    HBr plasma treatments are widely used in nanoscale lithographic technologies to increase the plasma etch resistance of 193 nm photoresist masks as well as to decrease their Line Width Roughness (LWR). VUV irradiation of the photoresist is known to play a major role in this process by inducing polymer chains rearrangement and finally LWR reduction. However, in the plasma environment (i.e., with radical and ion bombardment), the interaction layer formed at the resist surface perturbs this mechanism and a lower LWR reduction is achieved compared to VUV only treatment. So far the nature of the interaction layer, its formation mechanism and its relation with the resist pattern LWR were all unclear. In this paper, we show that a graphite-like layer is formed on the resist patterns by the redeposition of carbon-based species originating from the plasma dissociation of outgassed photo-etched resist moieties. We show that the presence of this layer inhibits the LWR minimization and causes an increase in the LWR when it becomes thick enough (i.e., a few nanometers). We present evidences that the difference in the mechanical properties of the graphite-like top layer which coats the resist patterns and the bulk of the resist patterns is correlated to the LWR after plasma treatment. We can conclude that the optimization of an HBr cure process relies on the minimization of the carbon redeposition while keeping a significant VUV light flux and we show that this can be achieved by using pulsed plasma processes.

  6. In situ, real-time detection of soot particles coated with NaCl using 193 nm light

    NASA Astrophysics Data System (ADS)

    Choi, J. H.; Stipe, C. B.; Koshland, C. P.; Lucas, D.

    2006-09-01

    We report in situ, real-time detection of soot particles coated with NaCl using excimer laser fragmentation fluorescence spectroscopy (ELFFS). Carbon atom fluorescence at 248 nm and the Na D-line at 589 nm are used as signatures of soot and NaCl, respectively. Soot particles are encapsulated with a NaCl layer in a well-controlled inverted flame burner. NaCl particles are injected into the methane-air co-flow flame to coat the soot particles. ArF laser irradiation of the coated particles in an air stream at 1.14 J/cm2 produces fluorescence from Na, C, and CH. At 0.69 J/cm2, which is slightly above the fluorescence threshold, but not enough for considerable fragmentation of the particles, Na D-line persists with little carbon and no CH observed. These results suggest that the photolytic fragmentation-fluorescence using 193 nm excitation can be effectively used for in situ, real-time chemical analysis of core-shell nanoparticles.

  7. The photodissociation dynamics of O2 at 193 nm: an O3PJ angular momentum polarization study.

    PubMed

    Brouard, M; Cireasa, R; Clark, A P; Quadrini, F; Vallance, C

    2006-12-21

    In the following paper we present translational anisotropy and angular momentum polarization data for O((3)P(1)) and O((3)P(2)) products of the photodissociation of molecular oxygen at 193 nm. The data were obtained using polarized laser photodissociation coupled with resonantly enhanced multiphoton ionization and velocity-map ion imaging. Under the jet-cooled conditions employed, absorption is believed to be dominated by excitation into the Herzberg continuum. The experimental data are compared with previous experiments and theoretical calculations at this and other wavelengths. Semi-classical calculations performed by Groenenboom and van Vroonhoven [J. Chem. Phys, 2002, 116, 1965] are used to estimate the alignment parameters arising from incoherent excitation and dissociation and these are shown to agree qualitatively well with the available experimental data. Following the work of Alexander et al. [J. Chem. Phys, 2003, 118, 10566], orientation and alignment parameters arising from coherent excitation and dissociation are modelled more approximately by estimating phase differences generated subsequent to dissociation via competing adiabatic pathways leading to the same asymptotic products. These calculations lend support to the view that large values of the coherent alignment moments, but small values of the corresponding orientation moments, could arise from coherent excitation of (and subsequent dissociation via) parallel and perpendicular components of the Herzberg I, II and III transitions.

  8. Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology

    NASA Astrophysics Data System (ADS)

    Parisi, P.; Mani, A.; Perry-Sullivan, C.; Kopp, J.; Simpson, G.; Renis, M.; Padovani, M.; Severgnini, C.; Piacentini, P.; Piazza, P.; Beccalli, A.

    2009-12-01

    After-develop inspection (ADI) and photo-cell monitoring (PM) are part of a comprehensive lithography process monitoring strategy. Capturing defects of interest (DOI) in the lithography cell rather than at later process steps shortens the cycle time and allows for wafer re-work, reducing overall cost and improving yield. Low contrast DOI and multiple noise sources make litho inspection challenging. Broadband brightfield inspectors provide the highest sensitivity to litho DOI and are traditionally used for ADI and PM. However, a darkfield imaging inspector has shown sufficient sensitivity to litho DOI, providing a high-throughput option for litho defect monitoring. On the darkfield imaging inspector, a very high sensitivity inspection is used in conjunction with advanced defect binning to detect pattern issues and other DOI and minimize nuisance defects. For ADI, this darkfield inspection methodology enables the separation and tracking of 'color variation' defects that correlate directly to CD variations allowing a high-sampling monitor for focus excursions, thereby reducing scanner re-qualification time. For PM, the darkfield imaging inspector provides sensitivity to critical immersion litho defects at a lower cost-of-ownership. This paper describes litho monitoring methodologies developed and implemented for flash devices for 65nm production and 45nm development using the darkfield imaging inspector.

  9. Nanosecond-time-response temperature measurements using radiation thermometry during 193-nm and 247-nm pulsed light irradiation: comparison of corneal surface temperature histories

    NASA Astrophysics Data System (ADS)

    Ishihara, Miya; Arai, Tsunenori; Sato, Shunichi; Morimoto, Yuji; Obara, Minoru; Kikuchi, Makoto

    2001-07-01

    We have developed the fast time-response measurement of thermal radiation with 15ns rise time to monitor the corneal surface temperature during ArF excimer laser ablation. In this study, e aim to investigate the influence of the relation between the corneal penetration depth and sampling depth of the measurement system on the measured temperature using 193 nm and 247 nm pulsed lights which have different penetration depths of cornea. When the sampling depth was defined as the penetration depth of cornea at the thermal radiation wavelength, we obtained about 3 micrometers of the sampling depth by pulsed photothermal radiometry (PPTR). In the case of the 247 nm light irradiation, where the corneal absorption coefficient at 247 nm was approximately equal to that for the thermal radiation, we found that the measured temperature rises were same as the estimated temperature rises based on the photothermal process. In contrast, in the case of the 193 nm light irradiation, where the absorption coefficient at 193 nm was larger than that for the thermal radiation, we found that the measured temperature rises were lower than the estimated temperature rises.

  10. Green solution: 120W ArF immersion light source supporting the next-generation multiple-pattering lithography

    NASA Astrophysics Data System (ADS)

    Kumazaki, Takahito; Ohta, Takeshi; Ishida, Keisuke; Tsushima, Hiroaki; Kurosu, Akihiko; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2015-03-01

    The difficulty of EUV lithography system development has prolonged the industry's dependence on ArF excimer lasers to realize further advancements in lithography process technologies. Smaller CD with reduced cost requires tighter specifications, and the potential extension to 450mm wafers introduces extremely difficult performance challenges on lasers. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. For example, electricity consumption costs and the dependence on rare gases, such as neon and helium, will become critical considerations for HVM process going forward. As a laser vendor, Gigaphoton continues to innovate and develop solutions that address these important issues. The latest model GT64A with its field-proven, twin-chamber platform has reduced environmental impact while upgrading performance and power. A variety of green technologies are employed on the GT64A. The first is the reduction of gas usage. Parameters, such as input power and gas pressure are closely monitored during operations and fed back to the injection/exhaust gas controller system. By applying a special algorithm, the laser gas consumption can be reduced by up to 50%. More than 96% of the gas used by the lasers is neon. Another rare gas that requires attention is Helium. Recently the unstable supply of helium became a serious worldwide issue. To cope with this situation, Gigaphoton is developing lasers that support completely helium-free operations.

  11. Laser ablation of ceramic Al{sub 2}O{sub 3} at 193 nm and 248 nm: The importance of single-photon ionization processes

    SciTech Connect

    Pelaez, R. J.; Afonso, C. N.; Bator, M.; Lippert, T.

    2013-06-14

    The aim of this work is to demonstrate that single-photon photoionization processes make a significant difference in the expansion and temperature of the plasma produced by laser ablation of ceramic Al{sub 2}O{sub 3} in vacuum as well as to show their consequences in the kinetic energy distribution of the species that eventually will impact on the film properties produced by pulsed laser deposition. This work compares results obtained by mass spectrometry and optical spectroscopy on the composition and features of the plasma produced by laser ablation at 193 nm and 248 nm, i.e., photon energies that are, respectively, above and below the ionization potential of Al, and for fluences between threshold for visible plasma and up to Almost-Equal-To 2 times higher. The results show that the ionic composition and excitation of the plasma as well as the ion kinetic energies are much higher at 193 nm than at 248 nm and, in the latter case, the population of excited ions is even negligible. The comparison of Maxwell-Boltzmann temperature, electron temperatures, and densities of the plasmas produced with the two laser wavelengths suggests that the expansion of the plasma produced at 248 nm is dominated by a single population. Instead, the one produced at 193 nm is consistent with the existence of two populations of cold and hot species, the latter associated to Al{sup +} ions that travel at the forefront and produced by single photon ionization as well as Al neutrals and double ionized ions produced by electron-ion impact. The results also show that the most energetic Al neutrals in the plasma produced at the two studied wavelengths are in the ground state.

  12. Surface modification of a MoSiON phase shift mask to reduce critical dimension variation after exposure to a 193-nm ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Choo, Hyeokseong; Seo, Dongwan; Lim, Sangwoo

    2014-08-01

    Introduction of a MoSi-based phase shift mask (PSM) improves photolithography resolution by causing light to shift phase by 180° thus canceling the overlap. However, when MoSiON PSM was exposed to an ArF excimer laser (λ = 193 nm), a significant increase in patterned critical dimension (CD) was observed. It was confirmed that the CD increase resulted from oxidation progression into the MoSiON layer. In this study, N2O or NH3 plasma treatment and thermal annealing in NH3 effectively suppressed CD variation after ArF laser exposure. While the compositional ratio of Si, N, O, and Mo elements in the MoSiON layer was not changed, an increase in oxygen content only in the top 5 nm was observed. Therefore, it is concluded that slight oxidation of the top surface of MoSiON PSM by introducing either N2O or NH3 plasma treatment or thermal annealing in NH3 suppresses an increase in the patterned CD of MoSiON PSM after exposure to a 193-nm ArF excimer laser.

  13. Thin film 193nm TNK measurement using multi-domain genetic algorithm (MDGA) with a combination of beam profile reflectometry (BPR), absolute ellipsometry (AE), and spectroscopic ellipsometry (SE)

    NASA Astrophysics Data System (ADS)

    Opsal, Jon L.; Leng, Jingmin; Ke, Chih-Ming; Chen, Pei-Hung; Chen, Jeng-Horng; Ku, Yao-Ching

    2003-11-01

    In the l30nm process, controlling the critical dimension uniformity (CDU) within a wafer is crucial. In order to minimize CDU within a wafer, CD swing amplitude against film thickness must be minimized. It is observed that the CD swing amplitude is closely related to the reflectivity of the anti-reflective coating (ARC) layer under the resist. The suppressed reflectivity (ideally zero) from the ARC layer and underlying layers can be achieved by properly selecting a combination of thickness (T), refractive index (N) and extinction coefficient (K) of the ARC layer. Accurate and repeatable measurements of T, N, and K at a wavelength of 193nm play a key role in this film optimization process. In this paper we propose a new method to simultaneously measure T, N, and K for various silicon oxynitride (SION) and organic ARC films. The new methodology uses a multi-domain genetic algorithm (MDGA) to search for global fitting residual minima for SION and organic ARC films using 21-point line-scan data sets logged on each wafer with a combination of BPR, AE and SE measurement technologies. The MDGA-obtained dispersion curves form constituents of a Bruggeman effective medium approximation (EMA) model. By using this unique metrology tool combination, swing amplitudes can be reduced to less than 5nm. The measurement variations of N&K at 193nm from machine to machine on SION and organic ARC films can be minimized to as small as 0.002. We point out that there are no 193nm N&K standards in the world. In this work, we used a set of Therma-Wave standards with thicknesses traceable to NIST standards. We also used the published thermal oxide and crystalline Si dielectric constants (i.e., N&Ks) as our standards for dispersion. The matching of SE (as well as the other technologies) of each tool is ensured through calibrations of SE to the same set of standards. Finally, a recipe using the combination of BPR, AE, and SE technologies allows one to deal with the large TNK variations

  14. Electron stimulated desorption of the metallic substrate at monolayer coverage: Sensitive detection via 193 nm laser photoionization of neutral aluminum desorbed from CH3O/Al(111)

    NASA Astrophysics Data System (ADS)

    Young, C. E.; Whitten, J. E.; Pellin, M. J.; Gruen, D. M.; Jones, P. L.

    A fortuitous overlap between the gain profile of the 193 nm ArF excimer laser and the Al autoionizing transition (sup 2)S(sub 1/2) (512753/cm) yields to the left (sup 2)P(sup 0)J has been exploited in the direct observation of substrate metal atoms in an electron simulated desorption (ESD) process from the monolayer adsorbate system CH3O/Al(111). The identity of the mass 27 photoion was established as Al(+) by (1) isotopic substitution of C-13 in the methanol employed for methoxy formation, and (2) tunable laser scans utilizing the DJ-2 (J = 3/2, 5/2) intermediate levels at approximately 32436/cm and a 248 nm ionization step. An ESD yield of approximately x 10(exp -6) Al atoms/(electron at 1 keV) was established by comparison with a sputtering experiment in the same apparatus. Velocity distributions measured for the desorbed Al species showed some differences in comparison with methoxy velocity data: a slightly lower peak velocity and a significantly less prominent high-velocity component.

  15. Analyzing velocity map images to distinguish the primary methyl photofragments from those produced upon C-Cl bond photofission in chloroacetone at 193 nm

    SciTech Connect

    Alligood, Bridget W.; Straus, Daniel B.; Butler, Laurie J.

    2011-07-21

    We use a combination of crossed laser-molecular beam scattering experiments and velocity map imaging experiments to investigate the three primary photodissociation channels of chloroacetone at 193 nm: C-Cl bond photofission yielding CH{sub 3}C(O)CH{sub 2} radicals, C-C bond photofission yielding CH{sub 3}CO and CH{sub 2}Cl products, and C-CH{sub 3} bond photofission resulting in CH{sub 3} and C(O)CH{sub 2}Cl products. Improved analysis of data previously reported by our group quantitatively identifies the contribution of this latter photodissociation channel. We introduce a forward convolution procedure to identify the portion of the signal, derived from the methyl image, which results from a two-step process in which C-Cl bond photofission is followed by the dissociation of the vibrationally excited CH{sub 3}C(O)CH{sub 2} radicals to CH{sub 3}+ COCH{sub 2}. Subtracting this from the total methyl signal identifies the methyl photofragments that result from the CH{sub 3}+ C(O)CH{sub 2}Cl photofission channel. We find that about 89% of the chloroacetone molecules undergo C-Cl bond photofission to yield CH{sub 3}C(O)CH{sub 2} and Cl products; approximately 8% result in C-C bond photofission to yield CH{sub 3}CO and CH{sub 2}Cl products, and the remaining 2.6% undergo C-CH{sub 3} bond photofission to yield CH{sub 3} and C(O)CH{sub 2}Cl products.

  16. Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners

    NASA Astrophysics Data System (ADS)

    Zimmermann, Jörg; Gräupner, Paul; Neumann, Jens T.; Hellweg, Dirk; Jürgens, Dirk; Patra, Michael; Hennerkes, Christoph; Maul, Manfred; Geh, Bernd; Engelen, Andre; Noordman, Oscar; Mulder, Melchior; Park, Sean; De Vocht, Joep

    2010-04-01

    The application of customized and freeform illumination source shapes is a key enabler for continued shrink using 193 nm water based immersion lithography at the maximum possible NA of 1.35. In this paper we present the capabilities of the DOE based Aerial XP illuminator and the new programmable FlexRay illuminator. Both of these advanced illumination systems support the generation of such arbitrarily shaped illumination sources. We explain how the different parts of the optical column interact in forming the source shape with which the reticle is illuminated. Practical constraints of the systems do not limit the capabilities to utilize the benefit of freeform source shapes vs. classic pupil shapes. Despite a different pupil forming mechanism in the two illuminator types, the resulting pupils are compatible regarding lithographic imaging performance so that processes can be transferred between the two illuminator types. Measured freeform sources can be characterized by applying a parametric fit model, to extract information for optimum pupil setup, and by importing the measured source bitmap into an imaging simulator to directly evaluate its impact on CD and overlay. We compare measured freeform sources from both illuminator types and demonstrate the good matching between measured FlexRay and DOE based freeform source shapes.

  17. Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system

    NASA Astrophysics Data System (ADS)

    Jiang, Ximan

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  18. Challenges with hyper-NA (NA>1.0) polarized light lithography for sub λ/4 resolution

    NASA Astrophysics Data System (ADS)

    Flagello, Donis G.; Hansen, Steven; Geh, Bernd; Totzeck, Michael

    2005-05-01

    The use of immersion technology will extend the lifetime of 193nm and 157nm lithography by enabling numerical apertures (NA) much greater than 1.0. This paper explores the effects that will occur when the high NA systems are augmented with polarization.. Specifically we show that there are strong interactions between the polarization induced by the reticle and polarization in the optics. This has a direct impact on the across-field specification of the polarization of the optical system as it causes a large variation in the imaging impact in photoresist. The impact of lens and reticle birefringence on the imaging is also analyzed. We show that reticle birefringence should not be a major concern when the birefringence is maintained to 2nm/cm - 4nm/cm levels. The lens can be modeled by a Jones matrix approach, where multiple pupils must be defined for each polarization state. We show the impact of the optical components by using a rigorous photoresist simulation on the process window of sub-50nm features using NA>1.3. The simulator uses a full Maxwell equation solver for the mask, polarized illumination, a Jones matrix approach for the pupil, and a photoresist simulation with calibrated model. The photoresist process is also shown to interact with polarization. Different photoresist will show varying degrees of sensitivity to polarization variation.

  19. EUV lithography imaging using novel pellicle membranes

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan; Vanpaemel, Johannes; Lee, Jae Uk; Adelmann, Christoph; Zahedmanesh, Houman; Huyghebaert, Cedric; Gallagher, Emily E.

    2016-03-01

    EUV mask protection against defects during use remains a challenge for EUV lithography. A stand-off protective membrane - a pellicle - is targeted to prevent yield losses in high volume manufacturing during handling and exposure, just as it is for 193nm lithography. The pellicle is thin enough to transmit EUV exposure light, yet strong enough to remain intact and hold any particles out of focus during exposure. The development of pellicles for EUV is much more challenging than for 193nm lithography for multiple reasons including: high absorption of most materials at EUV wavelength, pump-down sequences in the EUV vacuum system, and exposure to high intensity EUV light. To solve the problems of transmission and film durability, various options have been explored. In most cases a thin core film is considered, since the deposition process for this is well established and because it is the simplest option. The transmission specification typically dictates that membranes are very thin (~50nm or less), which makes both fabrication and film mechanical integrity difficult. As an alternative, low density films (e.g. including porosity) will allow thicker membranes for a given transmission specification, which is likely to improve film durability. The risk is that the porosity could influence the imaging. At imec, two cases of pellicle concepts based on reducing density have been assessed : (1) 3D-patterned SiN by directed self-assembly (DSA), and (2) carbon nanomaterials such as carbon nanotubes (CNT) and carbon nanosheets (CNS). The first case is based on SiN membranes that are 3D-patterned by Directed Self Assembly (DSA). The materials are tested relative to the primary specifications: EUV transmission and film durability. A risk assessment of printing performance is provided based on simulations of scattered energy. General conclusions on the efficacy of various approaches will provided.

  20. Lithography strategy for 65-nm node

    NASA Astrophysics Data System (ADS)

    Borodovsky, Yan A.; Schenker, Richard E.; Allen, Gary A.; Tejnil, Edita; Hwang, David H.; Lo, Fu-Chang; Singh, Vivek K.; Gleason, Robert E.; Brandenburg, Joseph E.; Bigwood, Robert M.

    2002-07-01

    Intel will start high volume manufacturing (HVM) of the 65nm node in 2005. Microprocessor density and performance trends will continue to follow Moore's law and cost-effective patterning solutions capable of supporting it have to be found, demonstrated and developed during 2002-2004. Given the uncertainty regarding the readiness and respective capabilities of 157nm and 193nm lithography to support 65nm technology requirements, Intel is developing both lithographic options and corresponding infrastructure with the intent to use both options in manufacturing. Development and use of dual lithographic options for a given technology node in manufacturing is not a new paradigm for Intel: whenever introduction of a new exposure wavelength presented excessive risk to the manufacturing schedule, Intel developed parallel patterning approaches in time for the manufacturing ramp. Both I-line and 248nm patterning solutions were developed and successfully used in manufacturing of the 350nm node at Intel. Similarly, 248nm and 193nm patterning solutions were fully developed for 130nm node high volume manufacturing.

  1. Extending lithography with advanced materials

    NASA Astrophysics Data System (ADS)

    Guerrero, Douglas J.

    2014-03-01

    Material evolution has been a key enabler of lithography nodes in the last 30 years. This paper explores the evolution of anti-reflective coatings and their transformation from materials that provide only reflection control to advanced multifunctional layers. It is expected that complementary processes that do not require a change in wavelength will continue to dominate the development of new devices and technology nodes. New device architecture, immersion lithography, negative-tone development, multiple patterning, and directed self-assembly have demonstrated the capabilities of extending lithography nodes beyond what anyone thought would be possible. New material advancements for future technology nodes are proposed.

  2. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  3. An ice lithography instrument.

    PubMed

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J A

    2011-06-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  4. An ice lithography instrument

    SciTech Connect

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-06-15

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  5. Improved Nanogap Servo System Using an Error-Based Disturbance Observer for High-Speed in Solid Immersion Lens-Based Plasmonic Lithography

    NASA Astrophysics Data System (ADS)

    Lim, Geon; Kim, Taeseob; Lee, Won-Sup; Choi, Guk-Jong; Park, Kyoung-Su; Park, Young-Pil; Yang, Hyunseok; Park, No-Cheol

    2013-09-01

    We proposed an advanced nanogap servo system using the error-based disturbance observer (EDOB) system. To achieve the feedback control over the nanogap based on the gap error signal (GES) in the near-field region, a precise gap-curve was obtained experimentally between a solid immersion lens and a photoresist-coated wafer using a piezo nanoposition actuator. With an accurate nanogap servo system, the EDOB was designed with a low-pass filter of 2.0 kHz bandwidth. Due to the powerful properties of the EDOB, which include stable robustness and disturbance rejection, a high-speed nanogap servo was achieved with up to 400 and 300 mm/s at the desired gaps of 20 and 15 nm, respectively. The disturbance rejection performance was evaluated from the GES, and the maximum deviation value was reduced by approximately 40% over that of the servo system without the EDOB.

  6. Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system

    NASA Astrophysics Data System (ADS)

    Jasper, Hans; Modderman, Theo; van de Kerkhof, Mark; Wagner, Christian; Mulkens, Jan; de Boeij, Wim; van Setten, Eelco; Kneer, Bernhard

    2006-03-01

    A second phase in the immersion era is starting with the introduction of ultra high NA (NA >1) systems. These systems are targeting for 45 nm node device production and beyond. ASML TWINSCAN XT:1700i features a maximum NA of 1.2 and a 26x33 mm2 scanner field size. The projection lens is an in-line catadioptric lens design and the AERIAL XP illumination system enables conventional an off-axis illumination pupil shapes in either polarized or un-polarized modes at maximum light efficiency. In this paper a description and a performance overview of the TWINSCAN XT:1700i is given. We will present and discuss lithographic performance results, with special attention at low-k1 imaging using high NA and polarized illumination. Overlay, focus and productivity performance will also be presented.

  7. Hydrogen Migration and Vinylidene Pathway for Formation of Methane in the 193 nm Photodissociation of Propene: CH3CH=CH2 and CD3CD=CD2

    NASA Technical Reports Server (NTRS)

    Zhao, Yi-Lei; Laufer, Allan H.; Halpern, Joshua B.; Fahr, Askar

    2007-01-01

    Photodissociation channels and the final product yields from the 193 nm photolysis of propene-h6 (CH2=CHCH3) and propene-d6 (CD2=CDCD3) have been investigated, employing gas chromatography, mass spectroscopy, and flame ionization (GC/MS/FID) detection methods. The yields of methane as well as butadiene relative to ethane show considerable variations when propene-h6 or propene-d6 are photolyzed. This suggests significant variances in the relative importance of primary photolytic processes and/or secondary radical reactions, occurring subsequent to the photolysis. Theoretical calculations suggest the potential occurrence of an intramolecular dissociation through a mechanism involving vinylidene formation, accompanied by an ethylenic H-migration through the pi-orbitals. This process affects the final yields of methane-h4 versus methane-d4 with respect to other products. The product yields from previous studies of the 193 nm photolysis of methyl vinyl ketone-h6 and -d6 (CH2=CHCOCH3, CD2=CDCOCD3), alternative precursors for generating methyl and vinyl radicals, are compared with the current results for propene.

  8. Preliminary characterisation of new glass reference materials (GSA-1G, GSC-1G, GSD-1G and GSE-1G) by laser ablation-inductively coupled plasma-mass spectrometry using 193 nm, 213 nm and 266 nm wavelengths

    USGS Publications Warehouse

    Guillong, M.; Hametner, K.; Reusser, E.; Wilson, S.A.; Gunther, D.

    2005-01-01

    New glass reference materials GSA-1G, GSC-1G, GSD-1G and GSE-1G have been characterised using a prototype solid state laser ablation system capable of producing wavelengths of 193 nm, 213 nm and 266 nm. This system allowed comparison of the effects of different laser wavelengths under nearly identical ablation and ICP operating conditions. The wavelengths 213 nm and 266 nm were also used at higher energy densities to evaluate the influence of energy density on quantitative analysis. In addition, the glass reference materials were analysed using commercially available 266 nm Nd:YAG and 193 nm ArF excimer lasers. Laser ablation analysis was carried out using both single spot and scanning mode ablation. Using laser ablation ICP-MS, concentrations of fifty-eight elements were determined with external calibration to the NIST SRM 610 glass reference material. Instead of applying the more common internal standardisation procedure, the total concentration of all element oxide concentrations was normalised to 100%. Major element concentrations were compared with those determined by electron microprobe. In addition to NIST SRM 610 for external calibration, USGS BCR-2G was used as a more closely matrix-matched reference material in order to compare the effect of matrix-matched and non matrix-matched calibration on quantitative analysis. The results show that the various laser wavelengths and energy densities applied produced similar results, with the exception of scanning mode ablation at 266 nm without matrix-matched calibration where deviations up to 60% from the average were found. However, results acquired using a scanning mode with a matrix-matched calibration agreed with results obtained by spot analysis. The increased abundance of large particles produced when using a scanning ablation mode with NIST SRM 610, is responsible for elemental fractionation effects caused by incomplete vaporisation of large particles in the ICP.

  9. Coaxial Lithography

    NASA Astrophysics Data System (ADS)

    Ozel, Tuncay

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowires that can be realized and studied in the laboratory. This thesis focuses on bridging templated electrochemical synthesis and lithography for expanding current synthetic capabilities with respect to materials generality and the ability to tailor two-dimensional growth in the formation of core-shell structures for the rational design and preparation of nanowires with very complex architectures that cannot be made by any other techniques. Chapter 1 introduces plasmonics, templated electrochemical synthesis, and on-wire lithography concepts and their significances within chemistry and materials science. Chapter 2 details a powerful technique for the deposition of metals and semiconductors with nanometer resolution in segment and gap lengths using on-wire lithography, which serves as a new platform to explore plasmon-exciton interactions in the form of long-range optical nanoscale rulers. Chapter 3 highlights an approach for the electrochemical synthesis of solution dispersible core-shell polymeric and inorganic semiconductor nanowires with metallic leads. A photodetector based on a single core-shell semiconductor nanowire is presented to demonstrate the functionality of the nanowires produced using this approach. Chapter 4 describes a new materials general technique, termed coaxial lithography (COAL), bridging templated electrochemical synthesis and lithography for generating coaxial nanowires in a parallel fashion with sub-10 nanometer resolution in both axial and radial dimensions. Combinations of coaxial nanowires composed of metals, metal oxides, metal chalcogenides, conjugated polymers, and a core/shell semiconductor nanowire with an embedded plasmonic nanoring are presented to

  10. The Photodissociation of Nitromethane at 193 nm.

    DTIC Science & Technology

    1983-02-28

    gas fill; the focus and alignment were kept constant. The dissociation products were detected in the plane of the laser and molecular beams by a...This background is presumably due to scattereo light from the intense laser dissociating or desorbing diffusion pump oil from the wall behind the...When dissociated , other nitroalkanes exhibit the same emission spectrum as CH3NO2, suggesting little transfer of energy from the excited NO2 group to

  11. How much further can lithography process windows be improved?

    NASA Astrophysics Data System (ADS)

    Hockey, Mary Ann; Lin, Qin; Calderas, Eric

    2012-03-01

    Utilizing thin photoresist layers for successful pattern transfer has gained acceptance as the lithography process of record, primarily due to the incorporation of silicon-containing hardmask (HM) layers for added etching resistance. Our work includes understanding the impact of HfO2 and ZrO2 nanocrystal additives incorporated into spin-on HM materials. The goal is to quantify both etch selectivity and the improvements in the lithography process windows with the addition of HfO2 nanocrystals into various types of polymers. Conventional 193-nm photoresists and spin-on carbon materials were selected as references for etch selectivity calculations. Results indicate there are process window advantages with improvements in the depth of focus (DOF) and overall pattern collapse margins. In addition, the ability to quantify line width roughness (LWR) as a function of resolution has been accomplished for these HM materials, and results show low levels of LWR are achievable. Overall lithography process margins are positive for DOF, exposure latitude (EL), LWR, and pattern collapse with the incorporation of HfO2-enhanced HM coatings for etch protection.

  12. Expected innovations of optical lithography in the next 10 years

    NASA Astrophysics Data System (ADS)

    Owa, Soichi; Hirayanagi, Noriyuki

    2016-03-01

    In the past 10 years, immersion lithography has been the most effective high volume manufacturing method for the critical layers of semiconductor devices. Thinking of the next 10 years, we can expect continuous improvement on existing 300 mm wafer scanners with better accuracy and throughput to enhance the total output value per input cost. This value productivity, however, can be upgraded also by larger innovations which might happen in optical lithography. In this paper, we will discuss the possibilities and the impossibilities of potential innovation ideas of optical lithography, which are 450 mm wafer, optical maskless, multicolor lithography, and metamaterial.

  13. New filter rating method in practice for sub-30-nm lithography process filter

    NASA Astrophysics Data System (ADS)

    Umeda, Toru; Mizuno, Takehito; Tsuzuki, Shuichi; Numaguchi, Toru

    2010-04-01

    A new method for rating retention in lithography process filters has been developed. The method employs a gold nanoparticle contaminant challenge, inductively coupled plasma mass spectrometry as a concentration detector, and dynamic light scattering as a particle size detector, all of which enable accurate, reliable filter retention rating below 30 nm. There is good agreement between results obtained with the new method and results obtained with a conventional polystyrene latex bead challenge. A filter that was rated at 10 nm using extrapolative methods was confirmed to be 10 nm using the new challenge test. Microbridge removal efficiency of polyethylene filters rated by the new method was studied in a 193 nm (dry) lithography process and the new method was verified. When applied to commercially available filters that are rated below 30 nm, the new method revealed significant differences in removal efficiency among similarly labeled filters.

  14. Coaxial lithography.

    PubMed

    Ozel, Tuncay; Bourret, Gilles R; Mirkin, Chad A

    2015-04-01

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowire that can be created and studied in the laboratory. Here, we report a high-throughput technique that can be used to prepare coaxial nanowires with sub-10 nm control over the architectural parameters in both axial and radial dimensions. The method, termed coaxial lithography (COAL), relies on templated electrochemical synthesis and can create coaxial nanowires composed of combinations of metals, metal oxides, metal chalcogenides and conjugated polymers. To illustrate the possibilities of the technique, a core/shell semiconductor nanowire with an embedded plasmonic nanoring was synthesized--a structure that cannot be prepared by any previously known method--and its plasmon-excitation-dependent optoelectronic properties were characterized.

  15. VUV lithography

    DOEpatents

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  16. VUV lithography

    DOEpatents

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  17. A study of high peroxynitrite generated in purge head outlet of charger with continuous supply of superior purification CDA system for 193 nm ArF reticle haze prevention

    NASA Astrophysics Data System (ADS)

    Chu, Fu-Sheng; Chiou, Shean-Hwan

    2008-05-01

    In this study, A phenomenon of high peroxynitrite generated in purge gas in purge head outlet of RSP SMIF-POD Charger was found. A superior purification CDA("CDA" is abbreviated from Clean Dry Air) continuous purge system has been used in 193nm ArF reticle chemical free preservation process for mask Haze control. Ion Chromatography(IC) and Gas Chromatography Mass Spectrometry(thermal desorber GC-MS) methods are used to analyze and verify inorganic ion and volatility organic compound cleanliness of purge gas, respectively. After IC analysis, high nitrate ion concentration was detected in UPW("UPW" is abbreviated from Ultra-Purification Water). As a result of this study, It is confident of presuming that high peroxynitrite contamination in purge gas in purge head outlet was caused by the blow type in-line gas ionizer, high potential(approximate 2KV) needle discharge influence on the inside of purge piping of Charger. After bypass in-line gas ionizer apparatus, the IC analysis result has a tendency towards a diminution in peroxynitrite that nitrate ion was not detected in UPW at all. At the same operation condition, if purge gas replace by superior purification AN2(A Class Nitrogen) and the inference conjectured that high ammonium ion response in UPW would take place. According to our study, superior purification CDA passed through the emitter tip of blow type in-line gas ionizers and under high potential needle discharge influence, high peroxynitrite concentration was generated in purge gas in purge head outlet of Charger. Due to the generation of peroxynitrite ion contamination in purge gas, it was not suitable to apply in the prevention of ESD damage of mask pattern in superior purification CDA(Clean Dry Air) continuous purge system. In this study, we also unexpectedly find that the blow type in-line gas ionizer with thermoplastic conductive tube resulted in purge gas a large number of volatility organic compounds(VOCs) contamination. VOC outgassing was generated

  18. Evaluation of corneal ablation by an optical parametric oscillator (OPO) at 2.94 μm and an Er:YAG laser and comparison to ablation by a 193-nm excimer laser

    NASA Astrophysics Data System (ADS)

    Telfair, William B.; Hoffman, Hanna J.; Nordquist, Robert E.; Eiferman, Richard A.

    1998-06-01

    Purpose: This study first evaluated the corneal ablation characteristics of (1) an Nd:YAG pumped OPO (Optical Parametric Oscillator) at 2.94 microns and (2) a short pulse Er:YAG laser. Secondly, it compared the histopathology and surface quality of these ablations with (3) a 193 nm excimer laser. Finally, the healing characteristics over 4 months of cat eyes treated with the OPO were evaluated. Methods: Custom designed Nd:YAG/OPO and Er:YAG lasers were integrated with a new scanning delivery system to perform PRK myopic correction procedures. After initial ablation studies to determine ablation thresholds and rates, human cadaver eyes and in-vivo cat eyes were treated with (1) a 6.0 mm Dia, 30 micron deep PTK ablation and (2) a 6.0 mm Dia, -5.0 Diopter PRK ablation. Cadaver eyes were also treated with a 5.0 mm Dia, -5.0 Diopter LASIK ablation. Finally, cats were treated with the OPO in a 4 month healing study. Results: Ablation thresholds below 100 mJ/cm2 and ablation rates comparable to the excimer were demonstrated for both infrared systems. Light Microscopy (LM) showed no thermal damage for low fluence treatments, but noticeable thermal damage at higher fluences. SEM and TEM revealed morphologically similar surfaces for low fluence OPO and excimer samples with a smooth base and no evidence of collagen shrinkage. The Er:YAG and higher fluence OPO treated samples revealed more damage along with visible collagen coagulation and shrinkage in some cases. Healing was remarkably unremarkable. All eyes had a mild healing response with no stromal haze and showed topographic flattening. LM demonstrated nothing except a moderate increase in keratocyte activity in the upper third of the stroma. TEM confirmed this along with irregular basement membranes. Conclusions: A non- thermal ablation process called photospallation is demonstrated for the first time using short pulse infrared lasers yielding damage zones comparable to the excimer and healing which is also comparable to

  19. EUV lithography

    NASA Astrophysics Data System (ADS)

    Kemp, Kevin; Wurm, Stefan

    2006-10-01

    Extreme ultraviolet lithography (EUVL) technology and infrastructure development has made excellent progress over the past several years, and tool suppliers are delivering alpha tools to customers. However, requirements in source, mask, optics, and resist are very challenging, and significant development efforts are still needed to support beta and production-level performance. Some of the important advances in the past few years include increased source output power, tool and optics system development and integration, and mask blank defect reduction. For example, source power has increased to levels approaching specification, but reliable source operation at these power levels has yet to be fully demonstrated. Significant efforts are also needed to achieve the resolution, line width roughness, and photospeed requirements for EUV photoresists. Cost of ownership and extendibility to future nodes are key factors in determining the outlook for the manufacturing insertion of EUVL. Since wafer throughput is a critical cost factor, source power, resist sensitivity, and system design all need to be carefully considered. However, if the technical and business challenges can be met, then EUVL will be the likely technology of choice for semiconductor manufacturing at the 32, 22, 16 and 11 nm half-pitch nodes. To cite this article: K. Kemp, S. Wurm, C. R. Physique 7 (2006).

  20. Metrology for Grayscale Lithography

    SciTech Connect

    Murali, Raghunath

    2007-09-26

    Three dimensional microstructures find applications in diffractive optical elements, photonic elements, etc. and can be efficiently fabricated by grayscale lithography. Good process control is important for achieving the desired structures. Metrology methods for grayscale lithography are discussed. Process optimization for grayscale e-beam lithography is explored and various process parameters that affect the grayscale process are discussed.

  1. Process enhancements for negative tone development (NTD)

    NASA Astrophysics Data System (ADS)

    Noya, Go; Yamamoto, Kazuma; Matsumoto, Naoki; Takemura, Yukie; Ishii, Maki; Miyamoto, Yoshihiro; Ishii, Masahiro; Nagahara, Tatsuro; Pawlowski, Georg

    2013-03-01

    The negative tone development (NTD) process has proven benefits for superior imaging performance in 193nm lithography. Shrink materials, such as AZ® RELACS® have found widespread use as a resolution enhancement technology in conventional 248nm (DUV), 193 nm dry (ArF) and 193 nm immersion (ArFi) lithography. Surfactant rinses, such as AZ® FIRM® are employed as yield enhancement materials to improve the lithographic performance by avoiding pattern collapse, eliminating defects, and improving CDU. This paper describes the development and recent achievements obtained with new shrink and rinse materials for application in NTD patterning processes.

  2. Top-surface imaging resists for lithography with strongly attenuated radiation

    SciTech Connect

    Ray-Chaudhuri, A.; Kubiak, G.; Henderson, C.; Wheeler, D.; Pollagi, T.

    1997-09-01

    Strong resist photoabsorption at wavelengths below 248 nm necessitates the use of a thin layer imaging (TLI) scheme for microlithography using 193 nm, 157 nm, or 13.4 nm radiation. Previous to this work, a TLI process commonly known as silylated top surface imaging (TSI) was developed by a Sandia/AT and T team for use in extreme ultraviolet lithography (EUVL) at 13.4 nm. Using this bilayer process, 0.13 {micro}m resolution with 87{degree} sidewalls in 0.7 {micro}m of resist was achieved for EUV exposures. New imaging layer polymers, silylation reagents and crosslinkers, and process conditions were screened for improvement in this TSI process with the ultimate goal of demonstrating a resist technology capable of 0.10 {micro}m critical dimension (CD). The results of these attempted improvements to the TSI process are described in this report.

  3. Immersive video

    NASA Astrophysics Data System (ADS)

    Moezzi, Saied; Katkere, Arun L.; Jain, Ramesh C.

    1996-03-01

    Interactive video and television viewers should have the power to control their viewing position. To make this a reality, we introduce the concept of Immersive Video, which employs computer vision and computer graphics technologies to provide remote users a sense of complete immersion when viewing an event. Immersive Video uses multiple videos of an event, captured from different perspectives, to generate a full 3D digital video of that event. That is accomplished by assimilating important information from each video stream into a comprehensive, dynamic, 3D model of the environment. Using this 3D digital video, interactive viewers can then move around the remote environment and observe the events taking place from any desired perspective. Our Immersive Video System currently provides interactive viewing and `walkthrus' of staged karate demonstrations, basketball games, dance performances, and typical campus scenes. In its full realization, Immersive Video will be a paradigm shift in visual communication which will revolutionize television and video media, and become an integral part of future telepresence and virtual reality systems.

  4. Immersive CAD

    SciTech Connect

    Ames, A.L.

    1999-02-01

    This paper documents development of a capability for performing shape-changing editing operations on solid model representations in an immersive environment. The capability includes part- and assembly-level operations, with part modeling supporting topology-invariant and topology-changing modifications. A discussion of various design considerations in developing an immersive capability is included, along with discussion of a prototype implementation we have developed and explored. The project investigated approaches to providing both topology-invariant and topology-changing editing. A prototype environment was developed to test the approaches and determine the usefulness of immersive editing. The prototype showed exciting potential in redefining the CAD interface. It is fun to use. Editing is much faster and friendlier than traditional feature-based CAD software. The prototype algorithms did not reliably provide a sufficient frame rate for complex geometries, but has provided the necessary roadmap for development of a production capability.

  5. Controlled Scanning Probe Lithography

    NASA Astrophysics Data System (ADS)

    Ruskell, Todd G.; Sarid, Dror; Workman, Richard K.; Pyle, Jason L.

    1997-03-01

    A method for real-time monitoring of the quality and quantity of silicon oxide grown on silicon using conducting-tip scanning probe lithography has been developed. The sub-picoampere tip-sample currents measured during lithography in ambient conditions are shown to be proportional to the amount of silicon oxide being grown. In addition, we have demonstrated the ability to control the composition of the grown material by altering the lithographic environment. Silicon nitride growth is shown to result from lithography on silicon samples in an environment of annhydrous ammonia.

  6. Superhydrophobic immersion

    NASA Astrophysics Data System (ADS)

    Coux, Martin; Mathis, Adrien; Clanet, Christophe; Quere, David

    2016-11-01

    A superhydrophobic object is an object on which water doesn't spread. We can think conversely, such an object should be covered by air when immersed in water. The film of air that is formed in this case is visible at the naked eye owing to its brightness. Natural questions that arise from the observation of this phenomenon are how much air stays trapped between the liquid and the solid, ie what is the thickness of the film, and how this quantity can be modified. In this study, we describe an experimental setup that allows us to easily control the velocity of immersion of an object into a liquid bath and to access the volume of dragged air, from which we can deduce the thickness of the air film.

  7. Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

    NASA Astrophysics Data System (ADS)

    Lee, Changwoo; Nagabhirava, Bhaskar; Goss, Michael; Wang, Peng; Friddle, Phil; Schmitz, Stafan; Wu, Jian; Yang, Richard; Mignot, Yann; Rassoul, Nouradine; Hamieh, Bassem; Beique, Genevieve; Labonte, Andre; Labelle, Catherine; Arnold, John; Mucci, John

    2015-03-01

    As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a potential cost reduction due to fewer wafer passes and masks required for patterning. However, the EUV lithography technique introduces newer types of resists that are thinner and softer compared to conventional 193nm resists currently being used. The main challenge is to find the key etch process parameters to improve the EUV resist selectivity, reduce LER and LWR, minimize line end shrink, improve tip-to-tip degradation, and avoid line wiggling while still enabling previous schemes such as trench-first-metal-hard-mask (TFMHM), self-aligned via (SAV) and self-aligned contact (SAC). In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.

  8. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.

    PubMed

    Ashby, Paul D; Olynick, Deirdre L; Ogletree, D Frank; Naulleau, Patrick P

    2015-10-14

    Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2 nm line-edge roughness, and 20 mJ cm(-2) exposure dose. Here, the current state of the development of EUV resist materials is reviewed. First, pattern formation in resist materials is described and the Hansen solubility sphere (HSS) is used as a framework for understanding the pattern-development process. Then, recent progress in EUVL resist chemistry and characterization is discussed. Incremental advances are obtained by transferring chemically amplified resist materials developed for 193 nm lithography to EUV wavelengths. Significant advances will result from synthesizing high-absorbance resist materials using heavier atoms. In the framework of the HSS model, these materials have significant room for improvement and thus offer great promise as high-performance EUV resists for patterning of sub-10 nm features.

  9. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  10. Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Erdmann, Andreas; Evanschitzky, Peter; Neumann, Jens Timo; Gräupner, Paul

    2016-04-01

    The mask plays a significant role as an active optical element in lithography, for both deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature-dependent shifts of the best-focus position and other aberration-like effects were reported both for DUV immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively. Several strategies to compensate the mask-induced phase effects are discussed.

  11. Thirty years of lithography simulation

    NASA Astrophysics Data System (ADS)

    Mack, Chris A.

    2005-05-01

    Thirty years ago Rick Dill and his team at IBM published the first account of lithography simulation - the accurate description of semiconductor optical lithography by mathematical equations. Since then, lithography simulation has grown dramatically in importance in four important areas: as a research tool, as a development tool, as a manufacturing tool, and as a learning tool. In this paper, the history of lithography simulations is traced from its roots to today"s indispensable tools for lithographic technology development. Along the way, an attempt will be made to define the true value of lithography simulation to the semiconductor industry.

  12. Optical characterization of 193nm amorphous carbon ARC films

    NASA Astrophysics Data System (ADS)

    Leng, Jingmin; Opsal, Jon; Pois, Heath

    2005-05-01

    In this study, the optical properties of amorphous carbon (aC) ARC films are investigated using an Opti-probe OP7341, and a metrology solution that robustly measures a broad range of process conditions is presented. We find that the aC material is consistent with uni-axial anisotropy, and that this effect may have important implications for photolithography. These results are obtained through the combination of multiple technologies in one tool: spectroscopic ellipsometry (SE); spectroscopic reflectometry or broadband (BB), with a wavelength range of 190-840 nm; single wavelength (673 nm) but multiple incident angle beam profile reflectometry (BPR) and beam profile ellipsometry (BPE), and single wavelength (633nm) absolute ellipsometry (AE). The combination of technologies at multiple angles and wavelengths provides additional optical information and sensitivity not possible with single-technology approaches. A complex wavelength dependent anisotropy model was developed for this analysis, and is compared with a real anisotropy model. The complex anisotropy model and the effective medium approximation (EMA) with two and three components were applied to a set of 12 wafer set with thickness swing aC films in the range of 500-750 Å as well as a second set of 23 pre- and post- etch wafers. The complex anisotropy model clearly has the advantage of best fit the BPR profiles along with the SE Fourier coefficients. The etch rate obtained by the complex anisotropy also showed a much narrower variation as compared with the EMA2 and EMA32 models with the real anisotropy.

  13. Photochemistry of cyano- and dicyanoacetylene at 193 nm

    SciTech Connect

    Halpern, J.B.; Petway, L.; Lu, R.; Jackson, W.M.; McCrary, V.R. ); Nottingham, W. )

    1990-03-08

    The far-UV photochemistry of cyano- and dicyanoacetylene has been studied. In particular, those photolysis channels have been characterized that lead to the production of excited-state fragments and CN in the ground electronic state. Following photolysis of HC{sub 3}N, in addition to direct production of CN and C{sub 2}H, there is a second dissociation channel leading to C{sub 3}N and H atoms. The results also show that at high laser intensity the HC{sub 3}N dissociates by two-photon photolysis and that the C{sub 3}N undergoes secondary photolysis. Photolysis of C{sub 4}NH{sub 2} produces CN and C{sub 3}N radicals.

  14. Wedge immersed thermistor bolometers

    NASA Technical Reports Server (NTRS)

    Dreyfus, M. G. (Inventor)

    1964-01-01

    An immersed thermistor bolometer for the detection of ultraviolet, visible, and infrared radiation is described. Two types of immersed bolometers are discussed. The immersion of thermistor flakes in a lens, or half immersed by optical contact on a lens, is examined. Lens materials are evaluated for optimum immersion including fused aluminum oxide, beryllium oxide, and germanium. The application of the bolometer to instruments in which the entrance pupil of the immersion optics has a high aspect ratio is considered.

  15. Native Language Immersion.

    ERIC Educational Resources Information Center

    Reyhner, Jon

    This paper describes the benefits of indigenous mother tongue immersion programs, examining the Total Physical Response approach to immersion for beginning learners and focusing on the development of Maori and Hawaiian mother tongue language immersion programs. The paper discusses the importance of immersing students in a language-risk…

  16. Microfluidic Applications of Soft Lithography

    SciTech Connect

    Rose, K A; Krulevitch, P; Hamilton, J

    2001-04-10

    The soft lithography fabrication technique was applied to three microfluidic devices. The method was used to create an original micropump design and retrofit to existing designs for a DNA manipulation device and a counter biological warfare sample preparation device. Each device presented unique and original challenges to the soft lithography application. AI1 design constraints of the retrofit devices were satisfied using PDMS devices created through variation of soft lithography methods. The micropump utilized the versatility of PDMS, creating design options not available with other materials. In all cases, the rapid processing of soft lithography reduced the fabrication time, creating faster turnaround for design modifications.

  17. Evidence of CH{sub 2}O (a-tilde{sup 3}A{sub 2}) and C{sub 2}H{sub 4} (a-tilde{sup 3}B{sub 1u}) produced from photodissociation of 1,3-trimethylene oxide at 193 nm

    SciTech Connect

    Lee, S.-H.; Ong, C.-S.; Lee, Yuan T.

    2006-02-21

    We investigated the dissociative ionization of formaldehyde (CH{sub 2}O) and ethene (C{sub 2}H{sub 4}) produced from photolysis of 1,3-trimethylene oxide at 193 nm using a molecular-beam apparatus and vacuum-ultraviolet radiation from an undulator for direct ionization. The CH{sub 2}O (C{sub 2}H{sub 4}) product suffers from severe dissociative ionization to HCO{sup +} (C{sub 2}H{sub 3}{sup +} and C{sub 2}H{sub 2}{sup +}) even though photoionization energy is as small as 9.8 eV. Branching ratios of fragmentation of CH{sub 2}O and C{sub 2}H{sub 4} following ionization are revealed as a function of kinetic energy of products using ionizing photons from 9.8 to 14.8 eV. Except several exceptions, branching ratios of daughter ions increase with increasing photon energy but decrease with increasing kinetic energy. The title reaction produces CH{sub 2}O and C{sub 2}H{sub 4} mostly on electronic ground states but a few likely on triplet states; C{sub 2}H{sub 4} (a-tilde{sup 3}B{sub 1u}) seems to have a yield greater than CH{sub 2}O (a-tilde{sup 3}A{sub 2}). The distinct features observed at small kinetic energies of daughter ions are attributed to dissociative ionization of photoproducts CH{sub 2}O (a-tilde{sup 3}A{sub 2}) and C{sub 2}H{sub 4} (a-tilde{sup 3}B{sub 1u}). The observation of triplet products indicates that intersystem crossing occurs prior to fragmentation of 1,3-trimethylene oxide.

  18. Fundamental study of optical threshold layer approach towards double exposure lithography

    NASA Astrophysics Data System (ADS)

    Gu, Xinyu; Berro, Adam J.; Cho, Younjin; Jen, Kane; Lee, Saul; Ngai, Tomoki; Ogata, Toshiyuki; Durand, William J.; Sundaresan, Arunkumar; Lancaster, Jeffrey R.; Jockusch, Steffen; Zimmerman, Paul; Turro, Nicholas J.; Willson, C. G.

    2009-03-01

    193 immersion lithography has reached its maximal achievable resolution. There are mainly two lithographic strategies that will enable continued increase in resolution. Those are being pursued in parallel. The first is extreme ultraviolet (EUV) lithography and the second is double patterning (exposure) lithography. EUV lithography is counted on to be available in 2013 time frame for 22 nm node. Unfortunately, this technology has suffered several delays due to fundamental problems with source power, mask infrastructure, metrology and overall reliability. The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node. This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography. Compared to DPL, DEL offers advantages in overlay and process time, thus reducing the cost-of-ownership (CoO). However, DEL requires new materials that have a non-linear photoresponse. So far, several approaches were proposed for double exposure lithography, from which Optical Threshold Layer (OTL) was found to give the best lithography performance according to the results of the simulation. This paper details the principle of the OTL approach. A photochromic polymer was designed and synthesized. The feasibility of the material for application of DEL was explored by a series of evaluations.

  19. Lithography, metrology and nanomanufacturing

    NASA Astrophysics Data System (ADS)

    Liddle, J. Alexander; Gallatin, Gregg M.

    2011-07-01

    Semiconductor chip manufacturing is by far the predominant nanomanufacturing technology in the world today. Top-down lithography techniques are used for fabrication of logic and memory chips since, in order to function, these chips must essentially be perfect. Assuring perfection requires expensive metrology. Top of the line logic sells for several hundred thousand dollars per square metre and, even though the required metrology is expensive, it is a small percentage of the overall manufacturing cost. The level of stability and control afforded by current lithography tools means that much of this metrology can be online and statistical. In contrast, many of the novel types of nanomanufacturing currently being developed will produce products worth only a few dollars per square metre. To be cost effective, the required metrology must cost proportionately less. Fortunately many of these nanofabrication techniques, such as block copolymer self-assembly, colloidal self-assembly, DNA origami, roll-2-roll nano-imprint, etc., will not require the same level of perfection to meet specification. Given the variability of these self-assembly processes, in order to maintain process control, these techniques will require some level of real time online metrology. Hence we are led to the conclusion that future nanomanufacturing may well necessitate ``cheap'' nanometre scale metrology which functions real time and on-line, e.g. at GHz rates, in the production stream. In this paper we review top-down and bottom-up nanofabrication techniques and compare and contrast the various metrology requirements.

  20. Lithography, metrology and nanomanufacturing.

    PubMed

    Liddle, J Alexander; Gallatin, Gregg M

    2011-07-01

    Semiconductor chip manufacturing is by far the predominant nanomanufacturing technology in the world today. Top-down lithography techniques are used for fabrication of logic and memory chips since, in order to function, these chips must essentially be perfect. Assuring perfection requires expensive metrology. Top of the line logic sells for several hundred thousand dollars per square metre and, even though the required metrology is expensive, it is a small percentage of the overall manufacturing cost. The level of stability and control afforded by current lithography tools means that much of this metrology can be online and statistical. In contrast, many of the novel types of nanomanufacturing currently being developed will produce products worth only a few dollars per square metre. To be cost effective, the required metrology must cost proportionately less. Fortunately many of these nanofabrication techniques, such as block copolymer self-assembly, colloidal self-assembly, DNA origami, roll-2-roll nano-imprint, etc., will not require the same level of perfection to meet specification. Given the variability of these self-assembly processes, in order to maintain process control, these techniques will require some level of real time online metrology. Hence we are led to the conclusion that future nanomanufacturing may well necessitate "cheap" nanometre scale metrology which functions real time and on-line, e.g. at GHz rates, in the production stream. In this paper we review top-down and bottom-up nanofabrication techniques and compare and contrast the various metrology requirements.

  1. Bubble-Pen Lithography.

    PubMed

    Lin, Linhan; Peng, Xiaolei; Mao, Zhangming; Li, Wei; Yogeesh, Maruthi N; Rajeeva, Bharath Bangalore; Perillo, Evan P; Dunn, Andrew K; Akinwande, Deji; Zheng, Yuebing

    2016-01-13

    Current lithography techniques, which employ photon, electron, or ion beams to induce chemical or physical reactions for micro/nano-fabrication, have remained challenging in patterning chemically synthesized colloidal particles, which are emerging as building blocks for functional devices. Herein, we develop a new technique - bubble-pen lithography (BPL) - to pattern colloidal particles on substrates using optically controlled microbubbles. Briefly, a single laser beam generates a microbubble at the interface of colloidal suspension and a plasmonic substrate via plasmon-enhanced photothermal effects. The microbubble captures and immobilizes the colloidal particles on the substrate through coordinated actions of Marangoni convection, surface tension, gas pressure, and substrate adhesion. Through directing the laser beam to move the microbubble, we create arbitrary single-particle patterns and particle assemblies with different resolutions and architectures. Furthermore, we have applied BPL to pattern CdSe/ZnS quantum dots on plasmonic substrates and polystyrene (PS) microparticles on two-dimensional (2D) atomic-layer materials. With the low-power operation, arbitrary patterning and applicability to general colloidal particles, BPL will find a wide range of applications in microelectronics, nanophotonics, and nanomedicine.

  2. Arrays of metallic micro-/nano-structures by means of colloidal lithography and laser dewetting

    NASA Astrophysics Data System (ADS)

    Constantinescu, C.; Deepak, K. L. N.; Delaporte, P.; Utéza, O.; Grojo, D.

    2016-06-01

    Long-range arrays of prismatoid metal nanostructures are fabricated by a hybrid methodology, i.e. using Langmuir microsphere films and laser-assisted dewetting. As the initial step, we use colloidal lithography. Monolayers of 1-5 μm polystyrene microspheres covered with a thermally evaporated Ag or Au thin film of controlled thickness (5-50 nm) are then used as masks to pattern the surface of quartz, BK7 glass or silicon substrates, typically in the order of cm2. When removing the spheres by physico-chemical means (ultrasound bath and solvent wash), the resulting surface shows an array of nm-size prismatoid structures (Fischer patterns), that can be further processed by laser. Thus, by using two different lasers (355-nm wavelength, 50-ps duration and 193-nm wavelength, 15-ns duration) for the metal dewetting, we control the shape of the deposited nanostructures. A detailed study is presented here on the reshaping of such metal structures through laser annealing. This new hybrid methodology expands the panel of microsphere-assisted technologies employed in preparing surface nanomaterials.

  3. Materials for and performance of multilayer lithography schemes

    NASA Astrophysics Data System (ADS)

    Weimer, Marc; Wang, Yubao; Neef, Charles J.; Claypool, James; Edwards, Kevin; Zu, Zhimin

    2007-03-01

    The 45-nm node will require the use of thinner photoresists, which necessitates the use of multilayer pattern transfer schemes. One common multilayer approach is the use of a silicon-rich anti-reflective hardmask (Si BARC) with a carbon-rich pattern transfer underlayer (spin-on carbon, or SOC). The combination of the two layers provides a highly planar platform for a thin resist, and provides a route to etch substrates due to the alternating plasma etch selectivities of the organic resist, inorganic Si BARC, and organic SOC. Yet such schemes will need to be optimized both for pattern transfer and optics. Optimizing optics under hyper-NA immersion conditions is more complicated than with standard (that is, NA<1) lithography. A rigorous calculation technique is used to evaluate and compare standard lithography to a hyper-NA case using a multilayer stack. An example of such a stack is shown to have reasonable lithographic performance.

  4. Programmable imprint lithography template

    DOEpatents

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  5. Off-axis illumination of lithography tool

    NASA Astrophysics Data System (ADS)

    Xing, Han; Lin, Li; Bin, Ma

    2013-12-01

    Lithography tool is a necessary part for LSI and VLSI. The illumination system design is an important part in the lithography optical system design. Off-axis illumination technology is an effective way to reducing resolution of lithography. The paper introduction the basic components of lithography tool, the principle of off-axis illumination reducing the resolution of lithography and focus on the two implementations of OAI technology, finally point out advantages and disadvantage of the two implementations.

  6. Vous avez dit "immersion?" (You Said "Immersion?").

    ERIC Educational Resources Information Center

    Gajo, Laurent, Ed.

    1998-01-01

    Articles on immersion and bilingual education include these: "Terminological Considerations Regarding Content and Language Integrated Learning" (Tarja Nikula, David Marsh); "Educazione bilingue e multiculturale, istruzione bilingue, immersione totale: quattro nozioni da definire" ("Bilingual and Multicultural Education,…

  7. Nanoimprint lithography for nanodevice fabrication

    NASA Astrophysics Data System (ADS)

    Barcelo, Steven; Li, Zhiyong

    2016-09-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  8. Nanoimprint lithography for nanodevice fabrication.

    PubMed

    Barcelo, Steven; Li, Zhiyong

    2016-01-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  9. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  10. Decal transfer lithography

    NASA Astrophysics Data System (ADS)

    Childs, William Robert

    A new soft-lithographic method for micropatterning polymeric resists, Decal Transfer Lithography (DTL), is described. This technique is based on the adhesive transfer of elastomeric decal patterns via the engineered adhesion and release properties of a compliant poly(dimethylsiloxane) (PDMS) patterning tool. This procedure is capable of transferring micron to sub-micron-sized features with high fidelity over large substrate areas in both open and closed forms, negative and positive image contrasts. Methods are introduced to promote adhesion of PDMS to noble metals using either of two methods: self-assembling monolayers (SAMs) or silicon dioxide capping layers. A novel UV/Ozone (UVO) mask was developed, which allows the photopatterning of UVO modifications of polymer surfaces. This modification in turn enables the direct photoinitiated patterning of resist patterns transferred by the soft-lithographic DTL method Photodefined-Cohesive Mechanical Failure (P-CMF), which fuses the design rules of the contact based adhesive transfer of PDMS in DTL with those of photolithography. The second, so-called Spartacus method, transfers the design rules of photolithography directly onto PDMS surfaces, enabling a photodefined adhesive transfer of PDMS films onto silicon oxide surfaces. The most significant advance embodied in the DTL method, however, is that is offers useful new capabilities for the design and fabrication of patterns of non-planar surfaces, 3D microfluidic assemblies, and microreactors.

  11. Lithography overlay controller formulation

    NASA Astrophysics Data System (ADS)

    Bode, Christopher A.; Toprac, Anthony J.; Edwards, Richard D.; Edgar, Thomas F.

    2000-08-01

    Lithography overlay refers to the measurement of the alignment of successive patterns within the manufacture of semiconductor devices. Control of overlay has become of great importance in semiconductor manufacturing, as the tolerance for overlay error is continually shrinking in order to manufacture next-generation semiconductor products. Run-to-run control has become an attractive solution to many control problems within the industry, including overlay. The term run-to-run control refers to any automated procedure whereby recipe settings are updated between successive process runs in order to keep the process under control. The following discussion will present the formulation of such a controller by examining control of overlay. A brief introduction of overlay will be given, highlighting the control challenge overlay presents. A data management methodology that groups like processes together in order to improve controllability, referred to as control threads, will then be presented. Finally, a discussion of linear model predictive control will show its utility in feedback run-to-run control.

  12. Cryogenic immersion microscope

    SciTech Connect

    Le Gros, Mark; Larabell, Carolyn A.

    2010-12-14

    A cryogenic immersion microscope whose objective lens is at least partially in contact with a liquid reservoir of a cryogenic liquid, in which reservoir a sample of interest is immersed is disclosed. When the cryogenic liquid has an index of refraction that reduces refraction at interfaces between the lens and the sample, overall resolution and image quality are improved. A combination of an immersion microscope and x-ray microscope, suitable for imaging at cryogenic temperatures is also disclosed.

  13. Photoinhibition superresolution lithography

    NASA Astrophysics Data System (ADS)

    Forman, Darren Lawrence

    While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

  14. Amplification of the index of refraction of aqueous immersion fluids by ionic surfactants

    NASA Astrophysics Data System (ADS)

    Lee, Kwangjoo; Kunjappu, Joy; Jockusch, Steffen; Turro, Nicholas J.; Widerschpan, Tatjana; Zhou, Jianming; Smith, Bruce W.; Zimmerman, Paul; Conley, Will

    2005-05-01

    In order to find new immersion liquids to improve the resolution of 193 nm immersion photolithography, we have attempted to discover aqueous system possessing an index of refraction greater than that of water using aqueous surfactant systems. The index of refraction (RI) of both cationic and anionic surfactant systems were examined in the presence of wide range of inorganic salts, and parameters such as size of surfactants, concentrations, and temperature were varied. The refractive index (RI) was found to be increased in the presence of both anionic and cationic surfactants compared to those of water and also increased as a function of surfactant concentration. However the refractive index tends to increase much more strongly as a function of salt concentration. In our study, a maximum RI enhancement was observed from 6.5 M CdCl2 in 8.2 mM aqueous SDS solution. The effect of micellar properties such as the critical micelle concentration (cmc) and degree of ionization were systematically studied for aqueous SDS system in the presence of CdCl2. The correlation on index of refraction between empirical data and theoretical prediction were performed using the concept of molar refraction. Wavelength dependence of RI from theoretical prediction based on empirical equation was examined for various concentration of CdCl2 system and the results are reported in the paper.

  15. Physical Limitations in Lithography for Microelectronics.

    ERIC Educational Resources Information Center

    Flavin, P. G.

    1981-01-01

    Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

  16. Immersion Meta-Lenses at Visible Wavelengths for Nanoscale Imaging.

    PubMed

    Chen, Wei Ting; Zhu, Alexander Y; Khorasaninejad, Mohammadreza; Shi, Zhujun; Sanjeev, Vyshakh; Capasso, Federico

    2017-04-13

    Immersion objectives can focus light into a spot smaller than what is achievable in free space, thereby enhancing the spatial resolution for various applications such as microscopy, spectroscopy, and lithography. Despite the availability of advanced lens polishing techniques, hand-polishing is still required to manufacture the front lens of a high-end immersion objective, which poses major constraints for lens design. This limits the shape of the front lens to spherical. Therefore, several other lenses need to be cascaded to correct for spherical aberration, resulting in significant challenges for miniaturization and adding design complexity for different immersion liquids. Here, by using metasurfaces, we demonstrate liquid immersion meta-lenses free of spherical aberration at various design wavelengths in the visible spectrum. We report water and oil immersion meta-lenses of various numerical apertures (NA) up to 1.1 and show that their measured focal spot sizes are diffraction-limited with Strehl ratios of approximately 0.9 at 532 nm. By integrating the oil immersion meta-lens (NA = 1.1) into a commercial scanning confocal microscope, we achieve an imaging spatial resolution of approximately 200 nm. These meta-lenses can be easily adapted to focus light through multilayers of different refractive indices and mass-produced using modern industrial manufacturing or nanoimprint techniques, leading to cost-effective high-end optics.

  17. Porphyrin-Based Photocatalytic Lithography

    SciTech Connect

    Bearinger, J; Stone, G; Christian, A; Dugan, L; Hiddessen, A; Wu, K J; Wu, L; Hamilton, J; Stockton, C; Hubbell, J

    2007-10-15

    Photocatalytic lithography is an emerging technique that couples light with coated mask materials in order to pattern surface chemistry. We excite porphyrins to create radical species that photocatalytically oxidize, and thereby pattern, chemistries in the local vicinity. The technique advantageously does not necessitate mass transport or specified substrates, it is fast and robust and the wavelength of light does not limit the resolution of patterned features. We have patterned proteins and cells in order to demonstrate the utility of photocatalytic lithography in life science applications.

  18. Polymer nanofibers by soft lithography

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Maruccio, Giuseppe; Mele, Elisa; Persano, Luana; Di Benedetto, Francesca; Cingolani, Roberto

    2005-09-01

    The fabrication of polymeric fibers by soft lithography is demonstrated. Polyurethane, patterned by capillarity-induced molding with high-resolution elastomeric templates, forms mm-long fibers with a diameter below 0.3μm. The Young's modulus of the fabricated structures, evaluated by force-distance scanning probe spectroscopy, has a value of 0.8MPa. This is an excellent example of nanostructures feasible by the combination of soft nanopatterning and high-resolution fabrication approaches for master templates, and particularly electron-beam lithography.

  19. Microfabrication using soft lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Xiao-Mei

    Soft Lithography is a group of non-photolithographic techniques currently being explored in our group. Four such techniques-microcontact printing (μCP), replica molding (REM), micromolding in capillaries (MIMIC), and microtransfer molding (μTM)-have been demonstrated for fabricating micro- and nanostructures of a variety of materials with dimension >=30 nm. Part I (Chapters 1-5) reviews several aspects of the three molding techniques REM, MIMIC, and μTM. Chapters 1-3 describe μTM and MIMIC, and the use of these techniques in the fabrication of functional devices. μTM is capable of generating μm-scale structures over large areas, on both planar and contoured surfaces, and is able to make 3-dimensional structures layer by layer. The capability of μTM and MIMIC has been demonstrated in the fabrication of single-mode waveguides, waveguide couplers and interferometers. The coupling between waveguides can be tailored by waveguide spacing or the differential in curing time between the waveguides and the cladding. Chapters 4-5 demonstrate the combination of REM and shrinkable polystyrene (PS) films to reduce the feature size of microstructures and to generate microstructures with high aspect ratios on both planar and curved surfaces. A shrinkable PS film is patterned with relief structures, and then heated and shrinks. Thermal shrinkage results in a 100-fold increase in the aspect ratio of the patterned microstructures in the PS film. The microstructures in the shrunken PS films can be transferred to many other materials by REM. Part II (Chapters 6-7) focuses on two issues in the microfabrication using self-assembled monolayers (SAMs) as ultrathin resists. Chapter 6 describes a selective etching solution for transferring patterns of SAMs of alkanethiolates into the underlying layers (e.g., gold, silver, and copper). This etching solution uses thiosulfate as the ligand that coordinates to the metal ions, and ferricyanide as the oxidant. It has been demonstrated to be

  20. Biomolecular Patterning via Photocatalytic Lithography

    SciTech Connect

    Bearinger, J P; Hiddessen, A L; Wu, K J; Christian, A T; Dugan, L C; Stone, G; Camarero, J; Hinz, A K; Hubbell, J A

    2005-02-18

    We have developed a novel method for patterning surface chemistry: Photocatalytic Lithography. This technique relies on inexpensive stamp materials and light; it does not necessitate mass transport or specified substrates, and the wavelength of light should not limit feature resolution. We have demonstrated the utility of this technique through the patterning of proteins, single cells and bacteria.

  1. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, Natale M.; Markle, David A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  2. Advanced oxidation scanning probe lithography

    NASA Astrophysics Data System (ADS)

    Ryu, Yu K.; Garcia, Ricardo

    2017-04-01

    Force microscopy enables a variety of approaches to manipulate and/or modify surfaces. Few of those methods have evolved into advanced probe-based lithographies. Oxidation scanning probe lithography (o-SPL) is the only lithography that enables the direct and resist-less nanoscale patterning of a large variety of materials, from metals to semiconductors; from self-assembled monolayers to biomolecules. Oxidation SPL has also been applied to develop sophisticated electronic and nanomechanical devices such as quantum dots, quantum point contacts, nanowire transistors or mechanical resonators. Here, we review the principles, instrumentation aspects and some device applications of o-SPL. Our focus is to provide a balanced view of the method that introduces the key steps in its evolution, provides some detailed explanations on its fundamentals and presents current trends and applications. To illustrate the capabilities and potential of o-SPL as an alternative lithography we have favored the most recent and updated contributions in nanopatterning and device fabrication.

  3. Advanced oxidation scanning probe lithography.

    PubMed

    Ryu, Yu K; Garcia, Ricardo

    2017-04-07

    Force microscopy enables a variety of approaches to manipulate and/or modify surfaces. Few of those methods have evolved into advanced probe-based lithographies. Oxidation scanning probe lithography (o-SPL) is the only lithography that enables the direct and resist-less nanoscale patterning of a large variety of materials, from metals to semiconductors; from self-assembled monolayers to biomolecules. Oxidation SPL has also been applied to develop sophisticated electronic and nanomechanical devices such as quantum dots, quantum point contacts, nanowire transistors or mechanical resonators. Here, we review the principles, instrumentation aspects and some device applications of o-SPL. Our focus is to provide a balanced view of the method that introduces the key steps in its evolution, provides some detailed explanations on its fundamentals and presents current trends and applications. To illustrate the capabilities and potential of o-SPL as an alternative lithography we have favored the most recent and updated contributions in nanopatterning and device fabrication.

  4. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  5. Graphic Arts/Offset Lithography.

    ERIC Educational Resources Information Center

    Hoisington, James; Metcalf, Joseph

    This revised curriculum for graphic arts is designed to provide secondary and postsecondary students with entry-level skills and an understanding of current printing technology. It contains lesson plans based on entry-level competencies for offset lithography as identified by educators and industry representatives. The guide is divided into 15…

  6. Plasmonic films based on colloidal lithography.

    PubMed

    Ai, Bin; Yu, Ye; Möhwald, Helmuth; Zhang, Gang; Yang, Bai

    2014-04-01

    This paper reviews recent advances in the field of plasmonic films fabricated by colloidal lithography. Compared with conventional lithography techniques such as electron beam lithography and focused ion beam lithography, the unconventional colloidal lithography technique with advantages of low-cost and high-throughput has made the fabrication process more efficient, and moreover brought out novel films that show remarkable surface plasmon features. These plasmonic films include those with nanohole arrays, nanovoid arrays and nanoshell arrays with precisely controlled shapes, sizes, and spacing. Based on these novel nanostructures, optical and sensing performances can be greatly enhanced. The introduction of colloidal lithography provides not only efficient fabrication processes but also plasmonic films with unique nanostructures, which are difficult to be fabricated by conventional lithography techniques.

  7. CD and defect improvement challenges for immersion processes

    NASA Astrophysics Data System (ADS)

    Ehara, Keisuke; Ema, Tatsuhiko; Yamasaki, Toshinari; Nakagawa, Seiji; Ishitani, Seiji; Morita, Akihiko; Kim, Jeonghun; Kanaoka, Masashi; Yasuda, Shuichi; Asai, Masaya

    2009-03-01

    The intention of this study is to develop an immersion lithography process using advanced track solutions to achieve world class critical dimension (CD) and defectivity performance in a state of the art manufacturing facility. This study looks at three important topics for immersion lithography: defectivity, CD control, and wafer backside contamination. The topic of defectivity is addressed through optimization of coat, develop, and rinse processes as well as implementation of soak steps and bevel cleaning as part of a comprehensive defect solution. Develop and rinse processing techniques are especially important in the effort to achieve a zero defect solution. Improved CD control is achieved using a biased hot plate (BHP) equipped with an electrostatic chuck. This electrostatic chuck BHP (eBHP) is not only able to operate at a very uniform temperature, but it also allows the user to bias the post exposure bake (PEB) temperature profile to compensate for systematic within-wafer (WiW) CD non-uniformities. Optimized CD results, pre and post etch, are presented for production wafers. Wafer backside particles can cause focus spots on an individual wafer or migrate to the exposure tool's wafer stage and cause problems for a multitude of wafers. A basic evaluation of the cleaning efficiency of a backside scrubber unit located on the track was performed as a precursor to a future study examining the impact of wafer backside condition on scanner focus errors as well as defectivity in an immersion scanner.

  8. 90nm node contact hole patterning through applying model based OPC in KrF lithography

    NASA Astrophysics Data System (ADS)

    Jeon, Young-Doo; Lee, Sang-Uk; Choi, Jaeyoung; Kim, Jeahee; Han, Jaewon

    2008-03-01

    As semiconductor technologies move toward 90nm generation and below, contact hole is one of the most challenging features to print in the semiconductor manufacturing process. There are two principal difficulties in order to define small contact hole pattern on wafer. One is insufficient process margin besides poor resolution compared with line & space pattern. The other is that contact hole should be made through pitches and sometimes random contact hole pattern should be fabricated. Therefore advanced ArF lithography scanner should be used for small contact hole printing with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC(Optical Proximity Correction), PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), mask biasing and thermal flow. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest the method of contact holes patterning by using KrF lithography tool in 90nm sFlash(stand alone Flash)devices. For patterning of contact hole, we apply RETs which combine OAI and Model based OPC. Additionally, in this paper we present the result of hole pattern images which operate ArF lithography equipment. Also, this study describes comparison of two wafer images that ArF lithography process which is used mask biasing and Rule based OPC, KrF lithography process which is applied hybrid OPC.

  9. X-ray lithography source

    DOEpatents

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  10. X-ray lithography source

    DOEpatents

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  11. EUV Lithography: New Metrology Challenges

    SciTech Connect

    Wood, Obert

    2007-09-26

    Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 22 nm half-pitch device node and beyond. Because its imaging wavelength is approximately twenty times shorter than those currently in use (13.5 nm versus 193-248 nm) and because EUV optics and masks must be provided with highly-precise reflective multilayer coatings, EUV lithography presents a number of new and difficult metrology challenges. In this paper, the current status of the metrology tools being used to characterize the figure and finish of EUV mirror surfaces, the defectivity and flatness of EUV mask blanks and the outgassing rates of EUV resist materials are discussed.

  12. Immersive cyberspace system

    NASA Technical Reports Server (NTRS)

    Park, Brian V. (Inventor)

    1997-01-01

    An immersive cyberspace system is presented which provides visual, audible, and vibrational inputs to a subject remaining in neutral immersion, and also provides for subject control input. The immersive cyberspace system includes a relaxation chair and a neutral immersion display hood. The relaxation chair supports a subject positioned thereupon, and places the subject in position which merges a neutral body position, the position a body naturally assumes in zero gravity, with a savasana yoga position. The display hood, which covers the subject's head, is configured to produce light images and sounds. An image projection subsystem provides either external or internal image projection. The display hood includes a projection screen moveably attached to an opaque shroud. A motion base supports the relaxation chair and produces vibrational inputs over a range of about 0-30 Hz. The motion base also produces limited translation and rotational movements of the relaxation chair. These limited translational and rotational movements, when properly coordinated with visual stimuli, constitute motion cues which create sensations of pitch, yaw, and roll movements. Vibration transducers produce vibrational inputs from about 20 Hz to about 150 Hz. An external computer, coupled to various components of the immersive cyberspace system, executes a software program and creates the cyberspace environment. One or more neutral hand posture controllers may be coupled to the external computer system and used to control various aspects of the cyberspace environment, or to enter data during the cyberspace experience.

  13. Nanoimprint lithography for microfluidics manufacturing

    NASA Astrophysics Data System (ADS)

    Kreindl, Gerald; Matthias, Thorsten

    2013-12-01

    The history of imprint technology as lithography method for pattern replication can be traced back to 1970's but the most significant progress has been made by the research group of S. Chou in the 1990's. Since then, it has become a popular technique with a rapidly growing interest from both research and industrial sides and a variety of new approaches have been proposed along the mainstream scientific advances. Nanoimprint lithography (NIL) is a novel method for the fabrication of micro/nanometer scale patterns with low cost, high throughput and high resolution. Unlike traditional optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional lithographic techniques. The ability to fabricate structures from the micro- to the nanoscale with high precision in a wide variety of materials is of crucial importance to the advancement of micro- and nanotechnology and the biotech- sciences as a whole and will be discussed in this paper. Nanoimprinting can not only create resist patterns, as in lithography, but can also imprint functional device structures in various polymers, which can lead to a wide range of applications in electronics, photonics, data storage, and biotechnology.

  14. X ray lithography in Japan

    NASA Astrophysics Data System (ADS)

    Clemens, James T.; Hill, Robert W.; Cerrina, Franco; Fuller, Gene E.; Pease, R. F.

    1991-10-01

    Integrated circuits (semiconductors) are the key components of modern computers, communication systems, consumer electronics, and the new generations of smart machines and instruments. Japan's strong position and growing influence in the manufacture of semiconductors and systems based on them is well known and well documented. Microlithography is one the most critical elements of the semiconductor manufacturing process because it determines the minimum feature size and the functional capabilities of the semiconductor. Because it is used many times in the manufacturing sequence, the quality of the microlithography process (i.e., number of defects, control for feature size, etc.) is critical in determining the yield and cost of semiconductors and hence the competitiveness of the electronics industry. At present all volume semiconductor manufacturing is done with optical UV (ultraviolet) projection lithography, twenty-year-old photographic technology which has been and is still evolving. There are many issues that limit the technical capability and cost-effectiveness of UV lithography, and thus, alternate lithographic techniques are continuously being researched and developed. X-ray lithography, which was invented in the early 1970's, holds the promise of providing higher yields in manufacturing semiconductors by virtue of enhanced process latitude, process robustness, and resolution.

  15. Gasoline immersion injury

    SciTech Connect

    Simpson, L.A.; Cruse, C.W.

    1981-01-01

    Chemical burns and pulmonary complications are the most common problems encountered in the patient immersed in gasoline. Our patient demonstrated a 46-percent total-body-surface area, partial-thickness chemical burn. Although he did not develop bronchitis or pneumonitis, he did display persistent atelectasis, laryngeal edema, and subsequent upper airway obstruction. This had not previously been reported in gasoline inhalation injuries. Hydrocarbon hepatitis secondary to the vascular endothelial damage is apparently a reversible lesion with no reported long-term sequelae. Gasoline immersion injuries may be a series multisystem injury and require the burn surgeon to take a multisystem approach to its diagnosis and treatment.

  16. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O2+, BF2+, P+ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF2+, over 90% of O2+ and P+ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He+ beam is as high as 440 A/cm2 • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O2+ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O2+ ions with the dose of 1015 cm-2. The oxide can then serve as a hard mask for patterning of the Si film. The

  17. Hierarchically Ordered Plasmonic Mask for Photo-lithography

    NASA Astrophysics Data System (ADS)

    Kim, Woo Soo; Thomas, Edwin L.

    2008-03-01

    A new high density nanolithography method for the fabrication of a hierarchically ordered plasmonic mask employs silver (Ag) nano-particles (NPs) attached to the surface of an amine- functionalized two-dimensional (2D) pattern fabricated by laser interference lithography (IL). The bi-functional sol-gel hybrid material (BFHM) is a negative-tone resist and can be directly patterned by IL. Since the BFHM has both an amine-function and a methacryl function on each molecule, photopolymerization provides network formation and a set of binding sites for the Ag NPs. The Ag NPs were then attached onto the BFHM pillars by immersing the patterned sample in a solution. Hierarchically ordered arrays of Ag NPs could be made by a block copolymer comprised of 40nm diameter spherical P2VP domains having a spacing of 88nm, forming a hexagonal pattern covering the hexagonally arrayed BFHM pillars. Lithography experiments using 430 nm wavelength light demonstrate transfer of both a 350 nm periodic pattern and a 88nm patten to a positive-tone photoresist via plasmonic field enhancement arising from the collective and individual excitation of the closely spaced interacting Ag NPs on the hierarchically patterned BFHM.

  18. Block-based mask optimization for optical lithography.

    PubMed

    Ma, Xu; Song, Zhiyang; Li, Yanqiu; Arce, Gonzalo R

    2013-05-10

    Pixel-based optical proximity correction (PBOPC) methods have been developed as a leading-edge resolution enhancement technique (RET) for integrated circuit fabrication. PBOPC independently modulates each pixel on the reticle, which tremendously increases the mask's complexity and, at the same time, deteriorates its manufacturability. Most current PBOPC algorithms recur to regularization methods or a mask manufacturing rule check (MRC) to improve the mask manufacturability. Typically, these approaches either fail to satisfy manufacturing constraints on the practical product line, or lead to suboptimal mask patterns that may degrade the lithographic performance. This paper develops a block-based optical proximity correction (BBOPC) algorithm to pursue the optimal masks with manufacturability compliance, where the mask is shaped by a set of overlapped basis blocks rather than pixels. BBOPC optimization is formulated based on a vector imaging model, which is adequate for both dry lithography with lower numerical aperture (NA), and immersion lithography with hyper-NA. The BBOPC algorithm successively optimizes the main features (MF) and subresolution assist features (SRAF) based on a modified conjugate gradient method. It is effective at smoothing any unmanufacturable jogs along edges. A weight matrix is introduced in the cost function to preserve the edge fidelity of the printed images. Simulations show that the BBOPC algorithm can improve lithographic imaging performance while maintaining mask manufacturing constraints.

  19. Immersion and the Internet.

    ERIC Educational Resources Information Center

    Birch, Gary; Matas, Cristina Poyatos

    1999-01-01

    Discusses a research project that aims to study the grammatical development of two groups of language immersion students, one that is participating in an Internet project involving collaboration with learners in France and Canada, and another that is exposed to the teaching of grammar that has been integrated with content area studies. (Author/VWL)

  20. Across scanner platform optimization to enable EUV lithography at the 10-nm logic node

    NASA Astrophysics Data System (ADS)

    Mulkens, Jan; Karssenberg, Jaap; Wei, Hannah; Beckers, Marcel; Verstappen, Leon; Hsu, Stephen; Chen, Guangqin

    2014-04-01

    EUV lithography is expected to be introduced in volume manufacturing at the 10-nm and 7-nm node. Especially in these first EUV nodes, critical layer patterning will be balanced with the use of ArF immersion. As a consequence a good overlay and placement matching between both lithography methods becomes an enabling factor for EUV. In this paper we present an integral method to optimize critical layer patterning across the EUV and ArF scanner platform, such that good overlay and device pattern placement is achieved. It is discussed that besides classical overlay control methods, also the optimization of the ArF and EUV imaging steps is needed. Best matching is achieved by applying high-order field-to-field overlay corrections for both imaging and overlay. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate computational application server. Improvements of CD uniformity are based on source mask optimization for EUV combined with CD optimization using freeform intra-field dose actuator in the immersion scanner.

  1. Discharge produced plasma source for EUV lithography

    NASA Astrophysics Data System (ADS)

    Borisov, V.; Eltzov, A.; Ivanov, A.; Khristoforov, O.; Kirykhin, Yu.; Vinokhodov, A.; Vodchits, V.; Mishhenko, V.; Prokofiev, A.

    2007-04-01

    Extreme ultraviolet (EUV) radiation is seen as the most promising candidate for the next generation of lithography and semiconductor chip manufacturing for the 32 nm node and below. The paper describes experimental results obtained with discharge produced plasma (DPP) sources based on pinch effect in a Xe and Sn vapour as potential tool for the EUV lithography. Problems of DPP source development are discussed.

  2. Kula Kaiapuni: Hawaiian Immersion Schools.

    ERIC Educational Resources Information Center

    Kame'eleihiwa, Lilikala

    1992-01-01

    The Hawaii State Department of Education offers a growing number of Hawaiian language immersion schools for its students. The article presents the history of immersion schools in Hawaii, examining criticisms of immersion schools, discussing their benefits, and explaining necessary components for success. (SM)

  3. Sub-100-nm trackwidth development by e-beam lithography for advanced magnetic recording heads

    NASA Astrophysics Data System (ADS)

    Chang, Jei-Wei; Chen, Chao-Peng

    2006-03-01

    Although semiconductor industry ramps the products with 90 nm much quicker than anticipated [1], magnetic recording head manufacturers still have difficulties in producing sub-100 nm read/write trackwidth. Patterning for high-aspectratio writer requires much higher depth of focus (DOF) than most advanced optical lithography, including immersion technique developed recently [2]. Self-aligning reader with its stabilized bias requires a bi-layer lift-off structure where the underlayer is narrower than the top image layer. As the reader's trackwidth is below 100nm, the underlayer becomes very difficult to control. Among available approaches, e-beam lithography remains the most promising one to overcome the challenge of progressive miniaturization. In this communication, the authors discussed several approaches using ebeam lithography to achieve sub-100 nm read/write trackwidth. Our studies indicated the suspended resist bridge design can not only widen the process window for lift-off process but also makes 65 nm trackwidth feasible to manufacture. Necked dog-bone structure seems to be the best design in this application due to less proximity effects from adjacent structures and minimum blockages for ion beam etching. The trackwidth smaller than 65 nm can be fabricated via the combination of e-beam lithography with auxiliary slimming and/or trimming. However, deposit overspray through undercut becomes dominated in such a small dimension. To minimize the overspray, the effects of underlayer thickness need to be further studied.

  4. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  5. Immersive Learning Technologies

    DTIC Science & Technology

    2009-08-20

    Team  Games  James Xu  Virtual Worlds  Keysha Gamor  Mobile  Judy Brown  Web 2.0  Mark Friedman 3 … and It’s Not Just Games  “The smartest... Web 2.0 , Twitter 13 Questions or Comments? Peter Smith Team Lead, Immersive Learning Technologies peter.smith.ctr@adlnet.gov +1.407.384.5572

  6. Study on RLS trade-off resist upgrade for production ready EUV lithography

    NASA Astrophysics Data System (ADS)

    Lee, Junghyung; Kim, Jieun; Jeong, Seunguk; Lim, Mijung; Koo, Sunyoung; Lim, Chang-Moon; Kim, Young-Sik

    2016-03-01

    Extreme Ultraviolet (EUV) is the most promising technology as substitute for multiple patterning based on ArF immersion lithography. If enough productivity can be accomplished, EUV will take main role in the chip manufacturing. Since the introduction of NXE3300, many significant results have been achieved in source power and availability, but lots of improvements are still required in various aspects for the implementation of EUV lithography on high volume manufacturing. Among them, it is especially important to attain high sensitivity resist without degrading other resolution performance. In this paper, performances of various resists were evaluated with real device patterns on NXE3300 scanner and technical progress of up-to-date EUV resists will be shown by comparing with the performance of their predecessors. Finally the prospect of overcoming the triangular trade-off between sensitivity, resolution, line edge roughness (LER) and achieving high volume manufacturing will be discussed.

  7. Particle Lithography Enables Fabrication of Multicomponent Nanostructures

    PubMed Central

    Lin, Wei-feng; Swartz, Logan A.; Li, Jie-Ren; Liu, Yang; Liu, Gang-yu

    2014-01-01

    Multicomponent nanostructures with individual geometries have attracted much attention because of their potential to carry out multiple functions synergistically. The current work reports a simple method using particle lithography to fabricate multicomponent nanostructures of metals, proteins, and organosiloxane molecules, each with its own geometry. Particle lithography is well-known for its capability to produce arrays of triangular-shaped nanostructures with novel optical properties. This paper extends the capability of particle lithography by combining a particle template in conjunction with surface chemistry to produce multicomponent nanostructures. The advantages and limitations of this approach will also be addressed. PMID:24707328

  8. Multi-shaped beam proof of lithography

    NASA Astrophysics Data System (ADS)

    Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

    2010-03-01

    In this paper a full package high throughput multi electron-beam approach, called Multi Shaped Beam (MSB), for applications in mask making as well as direct write will be presented including complex proof-of-lithography results. The basic concept enables a significant exposure shot count reduction for advanced patterns compared to standard Variable Shaped Beam (VSB) systems and allows full pattern flexibility by concurrently using MSB, VSB and Cell Projection (CP). Proof of lithography results will be presented, which have been performed using a fully operational electron-beam lithography system including data path and substrate scanning by x/y-stage movement.

  9. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  10. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  11. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  12. Mask requirements for advanced lithography

    NASA Astrophysics Data System (ADS)

    Trybula, Walter J.; Engelstad, Roxann L.

    1998-06-01

    Within the n ext 10 years, sub-100 nm features will be required for state-of-the-industry devices. The tolerances for errors at 100 nm or less are substantially smaller than can be achieved today. A critical element of the error budget is the mask. For the 100 nm generation, the 4x mask image placement requirement is 20 nm with CD requirements as low as 9 nm. The challenge would be significant if the only improvement were to develop superior optical masks. There are multiple advanced technologies that are vying to be the successor to optical lithography. Each of these has a unique mask requirement. The leading contenders for the next generation are 1x x-ray, projection e-beam, ion beam, EUV and cell projection e-beam. The x-ray design is a proximity system that employs a 1x membrane mask. Projection e-beam uses a membrane mask with stabilizing struts. Ion beam lithography employs a stencil membrane mask with a carbon coating. EUV employs a 13 nm radiation source that requires a reflective mask. Cell projection e-beam has 25x or greater image masks that are stitched on the wafer. All the technologies indicated above. Once a total error budget for the mask is known, it is necessary to divide the total into the constituent parts. The major sources of distortion can be categorized into eight areas: mask blank processing, e- beam writing, pattern transfer, pellicle effects, mounting, thermal loadings, dynamic effects during exposure and radiation damage. The distortions introduced by each of these depend upon the type of mask; so, individual mask calculations must be made. The purpose of this paper is to review the modeling requirements of each of the categories and to highlight some results from each of the mask configurations.

  13. Stage Cylindrical Immersive Display

    NASA Technical Reports Server (NTRS)

    Abramyan, Lucy; Norris, Jeffrey S.; Powell, Mark W.; Mittman, David S.; Shams, Khawaja S.

    2011-01-01

    Panoramic images with a wide field of view intend to provide a better understanding of an environment by placing objects of the environment on one seamless image. However, understanding the sizes and relative positions of the objects in a panorama is not intuitive and prone to errors because the field of view is unnatural to human perception. Scientists are often faced with the difficult task of interpreting the sizes and relative positions of objects in an environment when viewing an image of the environment on computer monitors or prints. A panorama can display an object that appears to be to the right of the viewer when it is, in fact, behind the viewer. This misinterpretation can be very costly, especially when the environment is remote and/or only accessible by unmanned vehicles. A 270 cylindrical display has been developed that surrounds the viewer with carefully calibrated panoramic imagery that correctly engages their natural kinesthetic senses and provides a more accurate awareness of the environment. The cylindrical immersive display offers a more natural window to the environment than a standard cubic CAVE (Cave Automatic Virtual Environment), and the geometry allows multiple collocated users to simultaneously view data and share important decision-making tasks. A CAVE is an immersive virtual reality environment that allows one or more users to absorb themselves in a virtual environment. A common CAVE setup is a room-sized cube where the cube sides act as projection planes. By nature, all cubic CAVEs face a problem with edge matching at edges and corners of the display. Modern immersive displays have found ways to minimize seams by creating very tight edges, and rely on the user to ignore the seam. One significant deficiency of flat-walled CAVEs is that the sense of orientation and perspective within the scene is broken across adjacent walls. On any single wall, parallel lines properly converge at their vanishing point as they should, and the sense of

  14. Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

    NASA Astrophysics Data System (ADS)

    Martin, Luc; Manakli, Serdar; Bayle, Sebastien; Belledent, Jérôme; Soulan, Sebastien; Wiedemann, Pablo; Farah, Abdi; Schiavone, Patrick

    2012-03-01

    Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory for critical level patterning. EUV lithography is still challenged by the availability of high power source and mask defectivity and suffers from a high cost of ownership perspective. Its introduction is now not foreseen before 2015. Parallel to these mask-based technologies, maskless lithography regularly makes significant progress in terms of potential and maturity. The massively parallel e-beam solution appears as a real candidate for high volume manufacturing. Several industrial projects are under development, one in the US, with the KLA REBL project and two in Europe driven by IMS Nanofabrication (Austria; MAPPER (The Netherlands). Among the developments to be performed to secure the takeoff of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. Within this data preparation flow, advanced proximity effect corrections must be implemented to address the 16nm node and below. This paper will detail this process and compare correction strategies in terms of robustness and accuracy. It will be based on results obtained using a MAPPER tool within the IMAGINE program driven by CEA-LETI, in Grenoble, France. All proximity effects corrections and the dithering step were performed using the software platform Inscale® from Aselta Nanographics. One important advantage of Inscale® is the ability to combine both model based dose and geometry adjustment to accurately pattern critical features. The paper will focus on the advantage of combining those two corrections at the 16nm node instead of using only geometry corrections. Thanks to the simulation capability of Inscale®, pattern fidelity and correction robustness will be evaluated and compared between

  15. Enabling immersive simulation.

    SciTech Connect

    McCoy, Josh; Mateas, Michael; Hart, Derek H.; Whetzel, Jonathan; Basilico, Justin Derrick; Glickman, Matthew R.; Abbott, Robert G.

    2009-02-01

    The object of the 'Enabling Immersive Simulation for Complex Systems Analysis and Training' LDRD has been to research, design, and engineer a capability to develop simulations which (1) provide a rich, immersive interface for participation by real humans (exploiting existing high-performance game-engine technology wherever possible), and (2) can leverage Sandia's substantial investment in high-fidelity physical and cognitive models implemented in the Umbra simulation framework. We report here on these efforts. First, we describe the integration of Sandia's Umbra modular simulation framework with the open-source Delta3D game engine. Next, we report on Umbra's integration with Sandia's Cognitive Foundry, specifically to provide for learning behaviors for 'virtual teammates' directly from observed human behavior. Finally, we describe the integration of Delta3D with the ABL behavior engine, and report on research into establishing the theoretical framework that will be required to make use of tools like ABL to scale up to increasingly rich and realistic virtual characters.

  16. Secrets of subwavelength imaging and lithography

    NASA Astrophysics Data System (ADS)

    Hemmer, Philip R.

    2011-08-01

    To understand the limits and tradeoffs of nearly all existing subwavelength imaging techniques it sufficient to understand magnetic resonance imaging (MRI) and its generalizations. In many cases, subwavelength optical lithography can be viewed as the inverse problem to imaging and so the same principles apply. A simple review of MRI is given which shows how the most popular subwavelength imaging and lithography techniques naturally arise as special cases.

  17. New spin-on metal hardmask materials for lithography processes

    NASA Astrophysics Data System (ADS)

    Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; Rahman, Dalil; Anyadiegwu, Clement; Mckenzie, Douglas; Dioses, Alberto; Cho, Joonyeon; Padmanaban, Munirathna

    2013-03-01

    Since the critical dimensions in integrated circuit (IC) device fabrication continue to shrink below 32 nm, multilayer stacks with alternating etch selectivities are required for successful pattern transfer from the exposed photoresist to the substrate. Inorganic resist underlayer materials are used as hard masks in reactive ion etching (RIE) with oxidative gases. The conventional silicon hardmask has demonstrated good reflectivity control and reasonable etch selectivity. However, some issues such as the rework of trilayer stacks and cleaning of oxide residue by wet chemistry are challenging problems for manufacturability. The present work reveals novel spin-on underlayer materials containing significant amounts of metal oxides in the film after baking at normal processing conditions. Such an inorganic metal hardmask (MHM) has excellent etch selectivity in plasma etch processes of the trilayer stack. The composition has good long term shelf life and pot life stability based on solution LPC analysis and wafer defect studies, respectively. The material absorbs DUV wavelengths and can be used as a spin-on inorganic or hybrid antireflective coating to control substrate reflectivity under DUV exposure of photoresist. Some of these metal-containing materials can be used as an underlayer in EUV lithography to significantly enhance photospeed. Specific metal hard masks are also developed for via or trench filling applications in IRT processes. The materials have shown good coating and lithography performance with a film thicknesses as low as 10 nm under ArF dry or immersion conditions. In addition, the metal oxide films or residues can be partially or completely removed by using various wet-etching solutions at ambient temperature.

  18. Broadcasting presence: immersive television

    NASA Astrophysics Data System (ADS)

    Harrison, David; Lodge, Nicholas

    2000-06-01

    Being present at a live event is undeniably the most exciting way to experience any entertainment. This is true whether we are talking about a musical concert, a theatrical performance, a cricket match, or even a firework display. The ability to direct your gaze where you wish, to hear sounds from all around you, to experience the immediacy and expectation of an unscripted happening, to feel the buzz of the crowd and to smell the grass or smoke, are all sensory cues which contribute to the powerful experience of being there. This paper examines the ways in which entertainment media have attempted to recreate experiences which encourage the viewer to suspend disbelief and become part of a remote or recorded event. We introduce the concept of immersive television and look at some of the research, spanning many disciplines of science and art, which the ITC is conducting to explore the potential of this new medium.

  19. Immersion echelle spectrograph

    DOEpatents

    Stevens, Charles G.; Thomas, Norman L.

    2000-01-01

    A small spectrograph containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10.sup.-5 cm.sup.2 sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  20. Extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  1. Array imaging system for lithography

    NASA Astrophysics Data System (ADS)

    Kirner, Raoul; Mueller, Kevin; Malaurie, Pauline; Vogler, Uwe; Noell, Wilfried; Scharf, Toralf; Voelkel, Reinhard

    2016-09-01

    We present an integrated array imaging system based on a stack of microlens arrays. The microlens arrays are manufactured by melting resist and reactive ion etching (RIE) technology on 8'' wafers (fused silica) and mounted by wafer-level packaging (WLP)1. The array imaging system is configured for 1X projection (magnification m = +1) of a mask pattern onto a planar wafer. The optical system is based on two symmetric telescopes, thus anti-symmetric wavefront aberrations like coma, distortion, lateral color are minimal. Spherical aberrations are reduced by using microlenses with aspherical lens profiles. In our system design approach, sub-images of individual imaging channels do not overlap to avoid interference. Image superposition is achieved by moving the array imaging system during the exposure time. A tandem Koehler integrator illumination system (MO Exposure Optics) is used for illumination. The angular spectrum of the illumination light underfills the pupils of the imaging channels to avoid crosstalk. We present and discuss results from simulation, mounting and testing of a first prototype of the investigated array imaging system for lithography.

  2. Lithography aware overlay metrology target design method

    NASA Astrophysics Data System (ADS)

    Lee, Myungjun; Smith, Mark D.; Lee, Joonseuk; Jung, Mirim; Lee, Honggoo; Kim, Youngsik; Han, Sangjun; Adel, Michael E.; Lee, Kangsan; Lee, Dohwa; Choi, Dongsub; Liu, Zephyr; Itzkovich, Tal; Levinski, Vladimir; Levy, Ady

    2016-03-01

    We present a metrology target design (MTD) framework based on co-optimizing lithography and metrology performance. The overlay metrology performance is strongly related to the target design and optimizing the target under different process variations in a high NA optical lithography tool and measurement conditions in a metrology tool becomes critical for sub-20nm nodes. The lithography performance can be quantified by device matching and printability metrics, while accuracy and precision metrics are used to quantify the metrology performance. Based on using these metrics, we demonstrate how the optimized target can improve target printability while maintaining the good metrology performance for rotated dipole illumination used for printing a sub-100nm diagonal feature in a memory active layer. The remaining challenges and the existing tradeoff between metrology and lithography performance are explored with the metrology target designer's perspective. The proposed target design framework is completely general and can be used to optimize targets for different lithography conditions. The results from our analysis are both physically sensible and in good agreement with experimental results.

  3. Immersion echelle spectrograph

    SciTech Connect

    Stevens, C.G.; Thomas, N.L.

    2000-06-20

    A small spectrograph is disclosed containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10{sup {minus}5}cm{sup 2}sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  4. Thermal comfort following immersion.

    PubMed

    Guéritée, Julien; Redortier, Bernard; House, James R; Tipton, Michael J

    2015-02-01

    Unlike thermal comfort in air, little research has been undertaken exploring thermal comfort around water sports. We investigated the impact of swimming and cooling in air after swimming on thermal comfort. After 10 min of swimming-and-resting cycles in 28°C water, volunteers wearing two types of garments or in swim briefs, faced winds in 24°C air, at rest or when stepping. Thermal comfort was significantly higher during swimming than resting. Post-immersion, following maximum discomfort, in 45 of 65 tests thermal comfort improved although mean skin temperature was still cooling (0.26 [SD 0.19] °C·min(-1) - max was 0.89°C·min(-1)). When thermal comfort was re-established mean skin temperature was lower than at maximal discomfort in 39 of 54 tests (0.81 [SD 0.58] °C - max difference was 2.68°C). The reduction in thermal discomfort in this scenario could be due to the adaptation of thermoreceptors, or to reductions in cooling rates to levels where discomfort was less stimulated. The relief from the recent discomfort may explain why, later, thermal comfort returned to initial levels in spite of poorer thermal profiles.

  5. Process improvements in the production of silicon immersion gratings

    NASA Astrophysics Data System (ADS)

    Brooks, Cynthia B.; Kidder, Benjamin; Grigas, Michelle; Griesmann, Ulf; Wilson, Daniel W.; Muller, Richard E.; Jaffe, Daniel T.

    2016-07-01

    We have explored a number of lithographic techniques and improvements to produce the resist lines that then define the grating groove edges of silicon immersion gratings. In addition to our lithographic process using contact printing with photomasks, which is our primary technique for the production of immersion gratings, we explored two alternative fabrication methods, direct-write electron beam and photo-lithography. We have investigated the application of antireflection (AR) coatings during our contact printing lithography method to reduce the effect of Fizeau fringes produced by the contact of the photomask on the photoresist surface. This AR coating reduces the amplitude of the periodic errors by a factor of 1.5. Electron beam (e-beam) patterning allows us to manufacture gratings that can be used in first order, with groove spacing down to 0.5 micrometer or smaller (2,000 grooves/mm), but could require significant e-beam write times of up to one week to pattern a full-sized grating. The University of Texas at Austin silicon diffractive optics group is working with Jet Propulsion Laboratory to develop an alternate e-beam method that employs chromium liftoff to reduce the write time by a factor of 10. We are working with the National Institute of Standards and Technology using laser writing to explore the possibility of creating very high quality gratings without the errors introduced during the contact-printing step. Both e-beam and laser patterning bypass the contact photolithography step and directly write the lines in photoresist on our silicon substrates, but require increased cost, time, and process complexity.

  6. Immersed interface methods. Final report

    SciTech Connect

    LeVeque, R.J.; Adams, L.M.; Bube, K.P.

    1996-11-01

    Cartesian grid methods encompass a wide variety of techniques used to solve partial differential equations in more than one space dimension on uniform Cartesian grids even when the underlying geometry is complex and not aligned with the grid. The authors` groups work on Immersed Interface Methods (IIM) was originally motivated by the desire to understand and improve the ``Immersed Boundary Method``, developed by Charles Peskin to solve incompressible Navier-Stokes equations in complicated geometries with moving elastic boundaries. This report briefly discusses the development of the Immersed Interface Methods and gives examples of application of the method in solving several partial differential equations.

  7. Force-controlled inorganic crystallization lithography.

    PubMed

    Cheng, Chao-Min; LeDuc, Philip R

    2006-09-20

    Lithography plays a key role in integrated circuits, optics, information technology, biomedical applications, catalysis, and separation technologies. However, inorganic lithography techniques remain of limited utility for applications outside of the typical foci of integrated circuit manufacturing. In this communication, we have developed a novel stamping method that applies pressure on the upper surface of the stamp to regulate the dewetting process of the inorganic buffer and the evaporation rate of the solvent in this buffer between the substrate and the surface of the stamp. We focused on generating inorganic microstructures with specific locations and also on enabling the ability to pattern gradients during the crystallization of the inorganic salts. This approach utilized a combination of lithography with bottom-up growth and assembly of inorganic crystals. This work has potential applications in a variety of fields, including studying inorganic material patterning and small-scale fabrication technology.

  8. Data sharing system for lithography APC

    NASA Astrophysics Data System (ADS)

    Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

    2007-03-01

    We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

  9. Optimizing the lithography model calibration algorithms for NTD process

    NASA Astrophysics Data System (ADS)

    Hu, C. M.; Lo, Fred; Yang, Elvis; Yang, T. H.; Chen, K. C.

    2016-03-01

    As patterns shrink to the resolution limits of up-to-date ArF immersion lithography technology, negative tone development (NTD) process has been an increasingly adopted technique to get superior imaging quality through employing bright-field (BF) masks to print the critical dark-field (DF) metal and contact layers. However, from the fundamental materials and process interaction perspectives, several key differences inherently exist between NTD process and the traditional positive tone development (PTD) system, especially the horizontal/vertical resist shrinkage and developer depletion effects, hence the traditional resist parameters developed for the typical PTD process have no longer fit well in NTD process modeling. In order to cope with the inherent differences between PTD and NTD processes accordingly get improvement on NTD modeling accuracy, several NTD models with different combinations of complementary terms were built to account for the NTD-specific resist shrinkage, developer depletion and diffusion, and wafer CD jump induced by sub threshold assistance feature (SRAF) effects. Each new complementary NTD term has its definite aim to deal with the NTD-specific phenomena. In this study, the modeling accuracy is compared among different models for the specific patterning characteristics on various feature types. Multiple complementary NTD terms were finally proposed to address all the NTD-specific behaviors simultaneously and further optimize the NTD modeling accuracy. The new algorithm of multiple complementary NTD term tested on our critical dark-field layers demonstrates consistent model accuracy improvement for both calibration and verification.

  10. System considerations for maskless lithography

    NASA Astrophysics Data System (ADS)

    Karnowski, Thomas; Joy, David; Allard, Larry; Clonts, Lloyd

    2004-05-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting prblems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-ofrf switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devidces are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  11. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  12. Nanostructures of functionalized gold nanoparticles prepared by particle lithography with organosilanes.

    PubMed

    Lusker, Kathie L; Li, Jie-Ren; Garno, Jayne C

    2011-11-01

    Periodic arrays of organosilane nanostructures were prepared with particle lithography to define sites for selective adsorption of functionalized gold nanoparticles. Essentially, the approach for nanoparticle lithography consists of procedures with two masks. First, latex mesospheres were used as a surface mask for deposition of an organosilane vapor, to produce an array of holes within a covalently bonded, organic thin film. The latex particles were readily removed with solvent rinses to expose discrete patterns of nanosized holes of uncovered substrate. The nanostructured film of organosilanes was then used as a surface mask for a second patterning step, with immersion in a solution of functionalized nanoparticles. Patterned substrates were fully submerged in a solution of surface-active gold nanoparticles coated with 3-mercaptopropyltrimethoxysilane. Regularly shaped, nanoscopic areas of bare substrate produced by removal of the latex mask provided sites to bind silanol-terminated gold nanoparticles, and the methyl-terminated areas of the organosilane film served as an effective resist, preventing nonspecific adsorption on masked areas. Characterizations with atomic force microscopy demonstrate the steps for lithography with organosilanes and functionalized nanoparticles. Patterning was accomplished for both silicon and glass substrates, to generate nanostructures with periodicities of 200-300 nm that match the diameters of the latex mesospheres of the surface masks. Nanoparticles were shown to bind selectively to uncovered, exposed areas of the substrate and did not attach to the methyl-terminal groups of the organosilane mask. Billions of well-defined nanostructures of nanoparticles can be generated using this high-throughput approach of particle lithography, with exquisite control of surface density and periodicity at the nanoscale.

  13. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    SciTech Connect

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters {beta}(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their {beta}(t) distributions are insensitive to the photon energy. Dissociation to H{sub 2}CO+C{sub 2}H{sub 4} is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H{sub 2}CO+C{sub 2}H{sub 4}. The observation of H{sub 2} and H atoms, {approx}1% in branching, indicates that products H{sub 2}CO and C{sub 2}H{sub 4} spontaneously decompose to only a small extent. Most HCO, C{sub 2}H{sub 3}, and C{sub 2}H{sub 2} ions originate from dissociative photoionization of products H{sub 2}CO and C{sub 2}H{sub 4}. Except atomic H and H{sub 2}, the photoproducts have large angular anisotropies, {beta}{>=}-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  14. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction.

    PubMed

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters beta(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their beta(t) distributions are insensitive to the photon energy. Dissociation to H(2)CO+C(2)H(4) is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H(2)CO+C(2)H(4). The observation of H(2) and H atoms, approximately 1% in branching, indicates that products H(2)CO and C(2)H(4) spontaneously decompose to only a small extent. Most HCO, C(2)H(3), and C(2)H(2) ions originate from dissociative photoionization of products H(2)CO and C(2)H(4). Except atomic H and H(2), the photoproducts have large angular anisotropies, beta>or=-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  15. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    NASA Astrophysics Data System (ADS)

    Lee, Shih-Huang

    2009-12-01

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters β(t) as a function of flight time of products at m /z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their β(t) distributions are insensitive to the photon energy. Dissociation to H2CO+C2H4 is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H2CO+C2H4. The observation of H2 and H atoms, ˜1% in branching, indicates that products H2CO and C2H4 spontaneously decompose to only a small extent. Most HCO, C2H3, and C2H2 ions originate from dissociative photoionization of products H2CO and C2H4. Except atomic H and H2, the photoproducts have large angular anisotropies, β ≥-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  16. Simple method for measuring acid generation quantum efficiency at 193 nm

    NASA Astrophysics Data System (ADS)

    Szmanda, Charles R.; Kavanagh, Robert J.; Bohland, John F.; Cameron, James F.; Trefonas, Peter, III; Blacksmith, Robert F.

    1999-06-01

    Traditional methods of measuring the Dill C Parameter involve monitoring the absorbance of a resist as a function of exposure. In chemically amplified resist, absorbance changes with exposure are small and frequently have little correlation to the amount of photoacid generated.

  17. Photolysis of solid NH3 and NH3-H2O mixtures at 193 nm

    NASA Astrophysics Data System (ADS)

    Loeffler, M. J.; Baragiola, R. A.

    2010-12-01

    We have studied UV photolysis of solid ammonia and ammonia-dihydrate samples at 40 K, using infrared spectroscopy, mass spectrometry, and microgravimetry. We have shown that in the pure NH3 sample, the main species ejected are NH3, H2, and N2, where the hydrogen and nitrogen increase with laser fluence. This increase in N2 ejection with laser fluence explains the increase in mass loss rate detected by a microbalance. In contrast, for the ammonia-water mixture, we see very weak signals of H2 and N2 in the mass spectrometer, consistent with the very small mass loss during the experiment and with a <5% decrease in the NH3 infrared absorption bands spectroscopy after a fluence of ˜3 × 1019 photons/cm2. The results imply that ammonia-ice mixtures in the outer solar system are relatively stable under solar irradiation.

  18. Interference Lithography for Optical Devices and Coatings

    DTIC Science & Technology

    2010-01-01

    fabricate self- healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to... catalyzed by moisture in air; if the indices of the two polymers are matched, the coatings turn transparent after healing. Interference lithography...self- healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to sequester

  19. Liquid-Phase Beam Pen Lithography.

    PubMed

    He, Shu; Xie, Zhuang; Park, Daniel J; Liao, Xing; Brown, Keith A; Chen, Peng-Cheng; Zhou, Yu; Schatz, George C; Mirkin, Chad A

    2016-02-24

    Beam pen lithography (BPL) in the liquid phase is evaluated. The effect of tip-substrate gap and aperture size on patterning performance is systematically investigated. As a proof-of-concept experiment, nanoarrays of nucleotides are synthesized using BPL in an organic medium, pointing toward the potential of using liquid phase BPL to perform localized photochemical reactions that require a liquid medium.

  20. NXT:1980Di immersion scanner for 7nm and 5nm production nodes

    NASA Astrophysics Data System (ADS)

    de Graaf, Roelof; Weichselbaum, Stefan; Droste, Richard; McLaren, Matthew; Koek, Bert; de Boeij, Wim

    2016-03-01

    Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirements keep progressively scaling down and consequently require system improvements in immersion scanners. The on-product-overlay requirements are approaching levels of only a few nanometers, imposing stringent requirements on the scanner tool design in terms of reproducibility, accuracy and stability. In this paper we report on the performance of the NXT:1980Di immersion scanner. The NXT:1980Di builds upon the NXT:1970Ci, that is widely used for 16nm, 14nm and 10nm high-volume manufacturing. We will discuss the NXT:1980Di system- and sub-system/module enhancements that drive the scanner overlay, focus and productivity performance. Overlay, imaging, focus, productivity and defectivity data will be presented for multiple tools. To further reduce the on-product overlay system performance, alignment sensor contrast improvements as well as active reticle temperature conditioning are implemented on the NXT:1980Di. Reticle temperature conditioning will reduce reticle heating overlay and the higher contrast alignment sensor will improve alignment robustness for processed alignment targets. Due to an increased usage of multiple patterning techniques, an increased number of immersion exposures is required. NXT:1980Di scanner design modifications raised productivity levels from 250wph to 275wph. This productivity enhancement provides lower cost of ownership (CoO) for customers using immersion technology.

  1. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  2. Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist processes: II. Stochastic effects

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro

    2015-09-01

    Electron beam (EB) lithography is a core technology for nanofabrication. Owing to the increasing demand for high-resolution semiconductor lithography, the requirements for the resist processes of EB lithography for the photomasks used in ArF immersion and extreme ultraviolet lithographies and the mold fabrication of nanoimprints have also become stricter. In this study, the feasibility of single nano patterning by EB lithography with a chemically amplified resist process was investigated from the viewpoint of stochastic effects. The latent images of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) were calculated using a Monte Carlo method on the basis of the sensitization and reaction mechanisms of chemically amplified EB resists. Compared with the line-and-space pattern with a 7 nm half-pitch, line edge roughness (LER) and the stochastic pinching generation are considered to be significantly improved by increasing the pitch. It was found that the suppression of the stochastic generation of bridges is the critical issue in 7 nm quarter-pitch fabrication.

  3. Immersible solar heater for fluids

    DOEpatents

    Kronberg, James W.

    1995-01-01

    An immersible solar heater comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  4. Immersion francaise precoce: Maternelle (Early French Immersion: Kindergarten).

    ERIC Educational Resources Information Center

    Burt, Andy; And Others

    An extensive resource manual and teaching guide is presented for the kindergarten teacher in the early French immersion program. The first three chapters contain introductory material discussing the kindergarten child, this particular program, language development in kindergarten, and the role of the kindergarten teacher which is analagous to that…

  5. Soft molding lithography of conjugated polymers

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Persano, Luana; Cingolani, Roberto; Gigli, Giuseppe; Babudri, Francesco; Farinola, Gianluca M.; Naso, Francesco

    2004-02-01

    We report on the nanopatterning of conjugated polymers by soft molding, and exploit the glass transition of the organic compound in conformal contact with an elastomeric element. We succeeded in printing different compounds with resolution down to 300 nm at temperatures up to 300 °C in vacuum. No significant variation of the photoluminescence (PL) spectra nor heavy degradation of the PL quantum yield was observed after the lithography process. Based on the high resolution achieved and on the well-retained luminescence properties of the patterned compounds, we conclude that high-temperature soft lithography is a valid, flexible and straightforward technique for one-step realization of organic-based devices.

  6. Implementation of assist features in EUV lithography

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

    2015-03-01

    The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

  7. Formation of Magnetic Anisotropy by Lithography

    PubMed Central

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2–0.3 erg/cm2 for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  8. Deep-UV microsphere projection lithography.

    PubMed

    Bonakdar, Alireza; Rezaei, Mohsen; Brown, Robert L; Fathipour, Vala; Dexheimer, Eric; Jang, Sung Jun; Mohseni, Hooman

    2015-06-01

    In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.

  9. Learning immersion without getting wet

    NASA Astrophysics Data System (ADS)

    Aguilera, Julieta C.

    2012-03-01

    This paper describes the teaching of an immersive environments class on the Spring of 2011. The class had students from undergraduate as well as graduate art related majors. Their digital background and interests were also diverse. These variables were channeled as different approaches throughout the semester. Class components included fundamentals of stereoscopic computer graphics to explore spatial depth, 3D modeling and skeleton animation to in turn explore presence, exposure to formats like a stereo projection wall and dome environments to compare field of view across devices, and finally, interaction and tracking to explore issues of embodiment. All these components were supported by theoretical readings discussed in class. Guest artists presented their work in Virtual Reality, Dome Environments and other immersive formats. Museum professionals also introduced students to space science visualizations, which utilize immersive formats. Here I present the assignments and their outcome, together with insights as to how the creation of immersive environments can be learned through constraints that expose students to situations of embodied cognition.

  10. Immersive Education, an Annotated Webliography

    ERIC Educational Resources Information Center

    Pricer, Wayne F.

    2011-01-01

    In this second installment of a two-part feature on immersive education a webliography will provide resources discussing the use of various types of computer simulations including: (a) augmented reality, (b) virtual reality programs, (c) gaming resources for teaching with technology, (d) virtual reality lab resources, (e) virtual reality standards…

  11. The Benefits of English Immersion.

    ERIC Educational Resources Information Center

    Porter, Rosalie Pedalino

    2000-01-01

    In 1998, California voters approved Initiative 227, requiring that all limited-English children be provided an English-immersion program for 1 year or longer as needed. Hispanic parents are leaders in the movement. Dire predictions that bilingual children in English-language classrooms would fall behind have not materialized. (Contains 18…

  12. Overlay distortions in wafer-scale integration lithography

    NASA Astrophysics Data System (ADS)

    Flack, Warren W.

    1993-08-01

    Wafer scale integration (WSI) lithography is the technique used to fabricate ultra large scale integration (ULSI) integrated circuits significantly greater in size than current products. Applications for WSI lithography include large solid state detector arrays, large area liquid crystal displays, high speed mainframe supercomputers, and large random access memories. The lithography technology required to manufacture these devices is particularly challenging, requiring stringent control of both submicron critical dimensions and accurate alignment of level to level device patterns over large chip areas.

  13. Polymeric waveguide Bragg grating filter using soft lithography

    NASA Astrophysics Data System (ADS)

    Kocabas, Askin; Aydinli, Atilla

    2006-10-01

    We use the soft lithography technique to fabricate a polymeric waveguide Bragg grating filter. Master grating structure is patterned by e-beam lithography. Using an elastomeric stamp and capillary action, uniform grating structures with very thin residual layers are transferred to the UV curable polymer without the use of an imprint machine. The waveguide layer based on BCB optical polymer is fabricated by conventional optical lithography. This approach provides processing simplicity to fabricate Bragg grating filters.

  14. Polarization manipulation in single refractive prism based holography lithography

    NASA Astrophysics Data System (ADS)

    Xiong, Wenjie; Xu, Yi; Xiao, Yujian; Lv, Xiaoxu; Wu, Lijun

    2015-01-01

    We propose theoretically and demonstrate experimentally a simple but effective strategy for polarization manipulation in single refractive prism based holographic lithography. By tuning the polarization of a single laser beam, we can obtain the pill shape interference pattern with a high-contrast where a complex optical setup and multiple polarizers are needed in the conventional holography lithography. Fabrication of pill shape two-dimensional polymer photonic crystals using one beam and one shoot holography lithography is shown as an example to support our theoretical results. This integrated polarization manipulation technique can release the crucial stability restrictions imposed on the multiple beams holography lithography.

  15. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  16. Hybrid immersed interface-immersed boundary methods for AC dielectrophoresis

    SciTech Connect

    Hossan, Mohammad Robiul; Dillon, Robert; Dutta, Prashanta

    2014-08-01

    Dielectrophoresis, a nonlinear electrokinetic transport mechanism, has become popular in many engineering applications including manipulation, characterization and actuation of biomaterials, particles and biological cells. In this paper, we present a hybrid immersed interface–immersed boundary method to study AC dielectrophoresis where an algorithm is developed to solve the complex Poisson equation using a real variable formulation. An immersed interface method is employed to obtain the AC electric field in a fluid media with suspended particles and an immersed boundary method is used for the fluid equations and particle transport. The convergence of the proposed algorithm as well as validation of the hybrid scheme with experimental results is presented. In this paper, the Maxwell stress tensor is used to calculate the dielectrophoretic force acting on particles by considering the physical effect of particles in the computational domain. Thus, this study eliminates the approximations used in point dipole methods for calculating dielectrophoretic force. A comparative study between Maxwell stress tensor and point dipole methods for computing dielectrophoretic forces are presented. The hybrid method is used to investigate the physics of dielectrophoresis in microfluidic devices using an AC electric field. The numerical results show that with proper design and appropriate selection of applied potential and frequency, global electric field minima can be obtained to facilitate multiple particle trapping by exploiting the mechanism of negative dielectrophoresis. Our numerical results also show that electrically neutral particles form a chain parallel to the applied electric field irrespective of their initial orientation when an AC electric field is applied. This proposed hybrid numerical scheme will help to better understand dielectrophoresis and to design and optimize microfluidic devices.

  17. 3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography.

    PubMed

    Ulmeanu, M; Grubb, M P; Jipa, F; Quignon, B; Ashfold, M N R

    2015-06-01

    We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates.

  18. The study of lithography conditions to use advanced resist performance properly

    NASA Astrophysics Data System (ADS)

    Yang, Zhengkai; Wang, Wuping; Chen, Quan; Aoyama, Hajime; Takemasa, Kengo; Sei, Toshihiko; Miyazawa, Tami; Matsuyama, Tomoyuki; Shao, Chun

    2015-03-01

    Correlation of resist modeling of printed features with lithographic data is a necessary part of developing new lithographic processes. Recently, we have found a case in which the most advanced resist types sometimes show better behavior than expectations from optical simulation in terms of dose latitude, MEEF (mask error enhancement factor), and even CD variation through different pitches. This superior resist performance may allow greater margin for error in each component, such as mask, scanner, and metrology in very low-k1 lithography. On the other hand, since the resist pattern CD for the most advanced resist is very much different from the prediction of optical simulation, it is a challenge to build OPC models using the exposure result with the resist. In order to solve this issue, we have tried to use several litho parameters to reduce the gap between optical simulation and resist CDs for OPC modeling. In this paper we discuss the effect of the parameters to reduce the gap between optical model and actual resist behavior with keeping superior performance as much as possible. The method we mention may be a key to use the most advanced resist in near future. As a result the life of ArF immersion lithography in the critical layer would be extended than we expect today.

  19. Immersive Environments - A Connectivist Approach

    NASA Astrophysics Data System (ADS)

    Loureiro, Ana; Bettencourt, Teresa

    We are conducting a research project with the aim of achieving better and more efficient ways to facilitate teaching and learning in Higher Level Education. We have chosen virtual environments, with particular emphasis to Second Life® platform augmented by web 2.0 tools, to develop the study. The Second Life® environment has some interesting characteristics that captured our attention, it is immersive; it is a real world simulator; it is a social network; it allows real time communication, cooperation, collaboration and interaction; it is a safe and controlled environment. We specifically chose tools from web 2.0 that enable sharing and collaborative way of learning. Through understanding the characteristics of this learning environment, we believe that immersive learning along with other virtual tools can be integrated in today's pedagogical practices.

  20. Immersible solar heater for fluids

    DOEpatents

    Kronberg, J.W.

    1995-07-11

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater. 11 figs.

  1. Immersible solar heater for fluids

    DOEpatents

    Hazen, T.C.; Fliermans, C.B.

    1994-01-01

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  2. High Efficiency Germanium Immersion Gratings

    SciTech Connect

    Kuzmenko, P J; Davis, P J; Little, S L; Little, L M; Bixler, J V

    2006-05-01

    We have fabricated several germanium immersion gratings by single crystal, single point diamond flycutting on an ultra-precision lathe. Use of a dead sharp tool produces groove corners less than 0.1 micron in radius and consequently high diffraction efficiency. We measured first order efficiencies in immersion of over 80% at 10.6 micron wavelength. Wavefront error was low averaging 0.06 wave rms (at 633 nm) across the full aperture. The grating spectral response was free of ghosts down to our detection limit of 1 part in 10{sup 4}. Scatter should be low based upon the surface roughness. Measurement of the spectral line profile of a CO{sub 2} laser sets an upper bound on total integrated scatter of 0.5%.

  3. Fabrication of metallic nanowires and nanoribbons using laser interference lithography and shadow lithography

    SciTech Connect

    Park, Joong- Mok; Nalwa, Kanwar Singh; Leung, Wai; Constant, Kristen; Chaudhary, Sumit; Ho, Kai-Ming

    2010-04-30

    Ordered and free-standing metallic nanowires were fabricated by e-beam deposition on patterned polymer templates made by interference lithography. The dimensions of the nanowires can be controlled through adjustment of deposition conditions and polymer templates. Grain size, polarized optical transmission and electrical resistivity were measured with ordered and free-standing nanowires.

  4. The ultimate chrome absorber in photomask making

    NASA Astrophysics Data System (ADS)

    Hashimoto, Masahiro; Iwashita, Hiroyuki; Kominato, Atsushi; Shishido, Hiroaki; Ushida, Masao; Mitsui, Hideaki

    2008-05-01

    193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. A new Cr absorber (TFC) for 193-nm attenuated phase-shift blanks was developed to meet the photomask requirements without any additional process step, such as hardmask etching. TFC was introduced with a design concept of the vertical profile for shorter etching time, the over etching time reduction. As a result, the dry-etching time was dramatically improved by more than 20% shorter than the conventional Cr absorber (TF11) without any process changes. We confirmed that 150nm-resist thickness was possible by TFC. The 32nm technology-node requirement is fully supported by TFC with thinner CAR, such as resolution and CD performance.

  5. Internal state manipulation for neutral atom lithography

    NASA Astrophysics Data System (ADS)

    Thywissen, Joseph Hermann

    2000-11-01

    We examine how the manipulation of the internal states of atoms can be used for atom lithography. Metastable argon atoms pattern a substrate by activating the growth of a carbonaceous material on the surface. We develop resist/etch systems that support 20 nm feature sizes, 2:1 aspect ratios, and 103 feature height amplification. Gold, silver, silicon, silicon dioxide, and silicon nitride substrates are patterned. Standing wave quenching (SWQ) light masks are used to create 65nm- wide features spaced 401 nm apart. One application of SWQ is to create a length reference artifact. We present a detailed error budget for the pattern periodicity, and find that an accuracy of better than one part in 106 is possible. We demonstrate atom resonance lithography (ARL), the first use of frequency encoding of spatial information for atom lithography. ARL has the potential to create patterns in two dimensions whose feature size is smaller than 20 nm and whose spacing is not limited by the wavelength of the patterning light. We form features in silicon that are 2.2 μm wide and spaced 20 μm apart. Using multiple probe frequencies, we demonstrate that multiple features can be created over the area covered by a monotonic gradient. The appendices include original contributions to the theory of manipulating atoms using micro- electromagnets. We propose several ways to create a magnetic waveguide using microfabricated wire patterns on a surface. We also discuss several implications of tight confinement: single mode atom guides, elongated traps with quasi-one-dimensional energetics, and constrictions whose conductance is quantized.

  6. Plasma formed ion beam projection lithography system

    DOEpatents

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  7. Directly patterned inorganic hardmask for EUV lithography

    NASA Astrophysics Data System (ADS)

    Stowers, Jason K.; Telecky, Alan; Kocsis, Michael; Clark, Benjamin L.; Keszler, Douglas A.; Grenville, Andrew; Anderson, Chris N.; Naulleau, Patrick P.

    2011-04-01

    This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity, metal-impurity content, outgassing, pattern transfer, and resist strip.

  8. Metallic nanowires by full wafer stencil lithography.

    PubMed

    Vazquez-Mena, O; Villanueva, G; Savu, V; Sidler, K; van den Boogaart, M A F; Brugger, J

    2008-11-01

    Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resistivity of the wires were studied. Nanowires down to 70 nm wide and 5 mum long have been achieved showing a resistivity of 10 microOmegacm for Al and 5 microOmegacm for Au and maximum current density of approximately 10(8) A/cm(2). This proves the capability of stencil lithography for the fabrication of metallic nanowires on a full wafer scale.

  9. Wave and Particle in Molecular Interference Lithography

    SciTech Connect

    Juffmann, Thomas; Truppe, Stefan; Geyer, Philipp; Major, Andras G.; Arndt, Markus; Deachapunya, Sarayut; Ulbricht, Hendrik

    2009-12-31

    The wave-particle duality of massive objects is a cornerstone of quantum physics and a key property of many modern tools such as electron microscopy, neutron diffraction or atom interferometry. Here we report on the first experimental demonstration of quantum interference lithography with complex molecules. Molecular matter-wave interference patterns are deposited onto a reconstructed Si(111) 7x7 surface and imaged using scanning tunneling microscopy. Thereby both the particle and the quantum wave character of the molecules can be visualized in one and the same image. This new approach to nanolithography therefore also represents a sensitive new detection scheme for quantum interference experiments.

  10. Highly absorbing ARC for DUV lithography

    NASA Astrophysics Data System (ADS)

    Pavelchek, Edward K.; Meador, James D.; Guerrero, Douglas J.; Lamb, James E., III; Kache, Ajit; doCanto, Manuel; Adams, Timothy G.; Stark, David R.; Miller, Daniel A.

    1996-06-01

    The properties of a new anti-reflective coating for 248 nm lithography are described. It is formed by thermally cross-linking a spin-on organic coating, and has an absorbance greater than 12/micrometers. It is compatible with UVIIHS and APEX-E photoresists. Thin films (less than 600 angstrom over silicon substrates) are found to completely suppress standing waves, to reduce EO swing curves to less than 3%, and to offer good CD control over typical field oxide topography. The etch rate was found to be comparable to that of the APEX-E photoresist.

  11. Lithography-Free Microchannel Fabrication in PDMS

    NASA Astrophysics Data System (ADS)

    Sankaran, Jeyantt S.; Kahsai, Wintana T.; Pham, Uyen H. T.; Iqbal, Samir M.

    2011-03-01

    We report a novel method for the fabrication of microchannels that could potentially be used for pervaporation experiments, cell adhesion and cell movement studies and detection of selective protein bio-markers. PDMS can sustain high temperatures, has a high young's modulus and it is biologically inert. Hydrophobic-hydrophilic interactions at gel point of PDMS form the basis of the presented technique. The repulsion of hydrophilic particles by the hydrophobic polymer matrix, stemming from the reduction of entropy and free energy variations during polymerization, provides an elegant lithography-independent approach for the fabrication of self-aligned microchannels. This work was supported by National Science Foundation CAREER Grant (ECCS 0845669).

  12. Immersive Earth: Teaching Earth and Space with inexpensive immersive technology

    NASA Astrophysics Data System (ADS)

    Reiff, P. H.; Sumners, C.; Law, C. C.; Handron, K.

    2003-12-01

    In 1995 we pioneered "Space Update", the Digital Library for the rest of us", software that was so simple that a child could use it without a keyboard and yet would allow one-click updating of the daily earth and space science images without the dangers of having an open web browser on display. Thanks to NASA support, it allowed museums and schools to have a powerful exhibit for a tiny price. Over 40,000 disks in our series have been distributed so far to educators and the public. In 2003, with our partners we are again revolutionizing educational technology with a low-cost hardware and software solution to creating and displaying immersive content. Recently selected for funding as part of the REASoN competition, Immersive Earth is a partnership of scientists, museums, educators, and content providers. The hardware consists of a modest projector with a special fisheye lens to be used in an inflatable dome which many schools already have. This, coupled with a modest personal computer, can now easily project images and movies of earth and space, allows training students in 3-D content at a tiny fraction of the cost of a cave or fullscale dome theater. Another low-cost solution is the "Imove" system, where spherical movies can play on a personal computer, with the user changing the viewing direction with a joystick. We were the first to create immersive earth science shows, remain the leader in creating educational content that people want to see. We encourage people with "allsky" images or movies to bring it and see what it looks like inside a dome! Your content could be in our next show!

  13. Focused ion beam lithography and anodization combined nanopore patterning.

    PubMed

    Lu, Kathy; Zhao, Jingzhong

    2010-10-01

    In this study, focused ion beam lithography and anodization are combined to create different nanopore patterns. Uniform-, alternating-, and gradient-sized shallow nanopore arrays are first made on high purity aluminum by focused ion beam lithography. These shallow pore arrays are then used as pore initiation sites during anodization by different electrolytes. Depending on the nature of the anodization electrolyte, the nanopore patterns by focused ion beam lithography play different roles in further pore development during anodization. The pore-to-pore distance by focused ion beam lithography should match with that by anodization for guided pore development to be effective. Ordered and heterogeneous nanopore arrays are obtained by the focused ion beam lithography and anodization combined approach.

  14. Pattern transfer processes for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Miyoshi, Seiro; Furukawa, Takamitsu; Watanabe, Hiroyuki; Irie, Shigeo; Itani, Toshiro

    2002-07-01

    We describe and evaluate three kinds of pattern transfer processes that are suitable for 157-nm lithography. These transfer processes are 1) a hard mask (HM) process using SiO as a HM material, 2) a HM process using an organic bottom anti-reflecting coating (BARC)/SiN structure, and 3) a bi- layer process using a silicon-containing resist and an organic film as the bottom layer. In all of these processes, the underlayer fo the resist acts as an anti-reflecting layer. For the HM processes, we patterned a newly developed fluorine-containing resist using a 157-nm microstepper, and transferred the resist patterns to the hard mask by reactive ion etching (RIE) with minimal critical dimension shift. Using the HM pattern, we then fabricated a 65nm Wsi/poly-Si gate pattern using a high-NA microstepper (NA=0.85). With the bi-layer process, we transferred a 60nm 1:1 lines and spaces pattern of a newly developed silicon-containing resist to a 300nm-thick organic film by RIE. The fabrication of a 65nm 1:1 gate pattern and 60nm 1:1 organic film patten clearly demonstrated that 157-nm lithography is the best candidate for fabricating sub-70nm node devices.

  15. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  16. Economic consequences of high throughput maskless lithography

    NASA Astrophysics Data System (ADS)

    Hartley, John G.; Govindaraju, Lakshmi

    2005-11-01

    Many people in the semiconductor industry bemoan the high costs of masks and view mask cost as one of the significant barriers to bringing new chip designs to market. All that is needed is a viable maskless technology and the problem will go away. Numerous sites around the world are working on maskless lithography but inevitably, the question asked is "Wouldn't a one wafer per hour maskless tool make a really good mask writer?" Of course, the answer is yes, the hesitation you hear in the answer isn't based on technology concerns, it's financial. The industry needs maskless lithography because mask costs are too high. Mask costs are too high because mask pattern generators (PG's) are slow and expensive. If mask PG's become much faster, mask costs go down, the maskless market goes away and the PG supplier is faced with an even smaller tool demand from the mask shops. Technical success becomes financial suicide - or does it? In this paper we will present the results of a model that examines some of the consequences of introducing high throughput maskless pattern generation. Specific features in the model include tool throughput for masks and wafers, market segmentation by node for masks and wafers and mask cost as an entry barrier to new chip designs. How does the availability of low cost masks and maskless tools affect the industries tool makeup and what is the ultimate potential market for high throughput maskless pattern generators?

  17. Atomic Image Projection Electron Beam Lithography

    NASA Astrophysics Data System (ADS)

    Kim, Ki-Bum

    2006-03-01

    While we are approaching to the nanotechnology era, as was proposed by Richard Feynman in 1959, our main concern still lies in how one can controllably manufacture and utilize nanometer scale features. The top-down approaches, most notably, lithography based techniques still have the problem of throughput although it has been successfully demonstrate to make features with the size less than 10 nm. The bottom-up approaches, either utilizing chemical vapor deposition process to make carbon nanotube or wet-chemical process to make size controllable quantum dots and rods, still have the limitation of extending it to many different types of materials and also delivering them on a wafer size substrate to make nanodevices. In this talk, we will propose a novel electron beam lithography technique to make nanometer scale features. The novelty of this process lies in the fact that one can utilize the crystalline lattice image commonly observed by the high resolution transmission electron microscopy as an ultimate mask to generate nanometer scale patterns. Using this technique, we demonstrate that down to 45 nm pitch size can be resolved on hydrogen silsesquioxine (HSQ) e-beam resist material. The patterns are formed on Si substarte with the dot size of about 30 nm and the line size of about 25 nm. This technique can be extend to define less than 10 nm size features only if the suitable resist is developed.

  18. Gestural interfaces for immersive environments

    NASA Astrophysics Data System (ADS)

    Margolis, Todd

    2014-02-01

    We are witnessing an explosion of new forms of Human Computer Interaction devices lately for both laboratory research and home use. With these new affordance in user interfaces (UI), how can gestures be used to improve interaction for large scale immersive display environments. Through the investigation of full body, head and hand tracking, this paper will discuss various modalities of gesture recognition and compare their usability to other forms of interactivity. We will explore a specific implementation of hand gesture tracking within a large tiled display environment for use with common collaborative media interaction activities.

  19. Source mask optimization study based on latest Nikon immersion scanner

    NASA Astrophysics Data System (ADS)

    Zhu, Jun; Wei, Fang; Chen, Lijun; Zhang, Chenming; Zhang, Wei; Nishinaga, Hisashi; El-Sewefy, Omar; Gao, Gen-Sheng; Lafferty, Neal; Meiring, Jason; Zhang, Recoo; Zhu, Cynthia

    2016-03-01

    The 2x nm logic foundry node has many challenges since critical levels are pushed close to the limits of low k1 ArF water immersion lithography. For these levels, improvements in lithographic performance can translate to decreased rework and increased yield. Source Mask Optimization (SMO) is one such route to realize these image fidelity improvements. During SMO, critical layout constructs are intensively optimized in both the mask and source domain, resulting in a solution for maximum lithographic entitlement. From the hardware side, advances in source technology have enabled free-form illumination. The approach allows highly customized illumination, enabling the practical application of SMO sources. The customized illumination sources can be adjusted for maximum versatility. In this paper, we present a study on a critical layer of an advanced foundry logic node using the latest ILT based SMO software, paired with state-of-the-art scanner hardware and intelligent illuminator. Performance of the layer's existing POR source is compared with the ideal SMO result and the installed source as realized on the intelligent illuminator of an NSR-S630D scanner. Both simulation and on-silicon measurements are used to confirm that the performance of the studied layer meets established specifications.

  20. [Jacuzzi-immersion for obstetric analgesia].

    PubMed

    Eldor, J; Burstein, M; Dudakova, I; Stark, M

    1992-12-15

    The effect of immersion in a jacuzzi in relieving labor pains, and on cervical dilatation was examined in 40 parturients. They were immersed in the jacuzzi during labor for an average of 25.5 minutes. Labor pains decreased during immersion by 2.59 degrees (scale of 0-10) compared with an average increase in labor pains of 0.25 degrees in 40 control women who were not immersed (p < 0.01). The cervical opening increased during immersion by an average of 1.5 cm in the test group, compared with 0.3 cm in the controls (p < 0.01). Immersion in a jacuzzi during labor is apparently associated with analgesia and accelerated cervical dilatation.

  1. Immersed Boundary Fractional Step Method

    NASA Astrophysics Data System (ADS)

    Taira, Kunihiko

    2005-11-01

    We present a new formulation of the immersed boundary method for incompressible flow over moving rigid bodies. Like many existing techniques we introduce a set of interpolation points on the surface at which the no-slip boundary condition is satisfied by including a (regularized) force in the momentum equations. By introducing interpolation and regularization operators and grouping pressure and force unknowns together, the discretized Navier-Stokes equations with the immersed boundary method can be formulated with an identical structure to the traditional fractional step method, but with a modified Poisson equation whose unknowns are both the pressure and the boundary force. The method highlights the analogous roles of pressure and boundary forcing as Lagrange multipliers in order to satisfy the divergence free and no-slip constraints, respectively. The overall method is found to be a simple addition to an existing fractional step code and the extended Poisson equation is solved efficiently with the conjugate gradient method. We demonstrate convergence and present results for two-dimensional flows with a variety of moving rigid bodies.

  2. Immersion in water during labor and delivery.

    PubMed

    2014-04-01

    Immersion in water has been suggested as a beneficial alternative for labor, delivery, or both and over the past decades has gained popularity in many parts of the world. Immersion in water during the first stage of labor may be associated with decreased pain or use of anesthesia and decreased duration of labor. However, there is no evidence that immersion in water during the first stage of labor otherwise improves perinatal outcomes, and it should not prevent or inhibit other elements of care. The safety and efficacy of immersion in water during the second stage of labor have not been established, and immersion in water during the second stage of labor has not been associated with maternal or fetal benefit. Given these facts and case reports of rare but serious adverse effects in the newborn, the practice of immersion in the second stage of labor (underwater delivery) should be considered an experimental procedure that only should be performed within the context of an appropriately designed clinical trial with informed consent. Facilities that plan to offer immersion in the first stage of labor need to establish rigorous protocols for candidate selection, maintenance and cleaning of tubs and immersion pools, infection control procedures, monitoring of mothers and fetuses at appropriate intervals while immersed, and immediately and safely moving women out of the tubs if maternal or fetal concerns develop.

  3. Pathogenesis of sudden death following water immersion (immersion syndrome)

    NASA Technical Reports Server (NTRS)

    Buhring, M.; Spies, H. F.

    1981-01-01

    Sympathetic activity under cold stress is investigated. Predominantly vagal cardio-depressive reflexes are discussed besides currently known mechanisms of sudden death after water immersion. Pronounced circulatory centralization in diving animals as well as following exposure in cold water indicates additional sympathetic activity. In cold water baths of 15 C, measurements indicate an increase in plasma catecholamine levels by more than 300 percent. This may lead to cardiac arrhythmias by the following mechanisms: cold water essentially induces sinus bradycardia; brady-and tachycardiarrhythmias may supervene as secondary complications; sinusbradycardia may be enhanced by sympathetic hypertonus. Furthermore, ectopic dysrhythmias are liable to be induced by the strictly sympathetic innervation of the ventricle. Myocardial ischemia following a rise in peripheral blood pressure constitutes another arrhythmogenic factor. Some of these reactions are enhanced by alcohol intoxication.

  4. Step and flash imprint lithography for semiconductor high volume manufacturing?

    NASA Astrophysics Data System (ADS)

    Malloy, M.; Litt, L. C.

    2010-03-01

    Step and Flash Imprint Lithography (SFIL), a form of ultraviolet nanoimprint lithography (UV-NIL), is recognized for its resolution and patterning abilities. It is one of the few next generation lithography techniques capable of meeting the resolution requirements of future semiconductor devices. However, many integration issues such as defectivity, throughput, and overlay must be resolved before SFIL can be used for semiconductor high volume manufacturing (HVM). This paper discusses the current status of SFIL, including the process and templates, and shows where more industry collaboration is needed to solve the most critical issues.

  5. Hybrid hotspot detection using regression model and lithography simulation

    NASA Astrophysics Data System (ADS)

    Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki; Pan, David Z.

    2016-03-01

    As minimum feature sizes shrink, unexpected hotspots appear on wafers. Therefore, it is important to detect and fix these hotspots at design stage to reduce development time and manufacturing cost. Currently, as the most accurate approach, lithography simulation is widely used to detect such hotspots. However, it is known to be time-consuming. This paper proposes a novel aerial image synthesizing method using regression and minimum lithography simulation for only hotspot detection. Experimental results show hotspot detection on the proposed method is equivalent compared with the results on the conventional hotspot detection method which uses only lithography simulation with much less computational cost.

  6. Photonic integrated circuits: new challenges for lithography

    NASA Astrophysics Data System (ADS)

    Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

    2016-10-01

    In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

  7. Nanoimprint lithography using disposable biomass template

    NASA Astrophysics Data System (ADS)

    Hanabata, Makoto; Takei, Satoshi; Sugahara, Kigen; Nakajima, Shinya; Sugino, Naoto; Kameda, Takao; Fukushima, Jiro; Matsumoto, Yoko; Sekiguchi, Atsushi

    2016-04-01

    A novel nanoimprint lithography process using disposable biomass template having gas permeability was investigated. It was found that a disposable biomass template derived from cellulose materials shows an excellent gas permeability and decreases transcriptional defects in conventional templates such as quartz, PMDS, DLC that have no gas permeability. We believe that outgasses from imprinted materials are easily removed through the template. The approach to use a cellulose for template material is suitable as the next generation of clean separation technology. It is expected to be one of the defect-less thermal nanoimprint lithographic technologies. It is also expected that volatile materials and solvent including materials become available that often create defects and peelings in conventional temples that have no gas permeability.

  8. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  9. Patterning proteins and cells using soft lithography.

    PubMed

    Kane, R S; Takayama, S; Ostuni, E; Ingber, D E; Whitesides, G M

    1999-12-01

    This review describes the pattering of proteins and cells using a non-photolithographic microfabrication technology, which we call 'soft lithography' because it consists of a set of related techniques, each of which uses stamps or channels fabricated in an elastomeric ('soft') material for pattern transfer. The review covers three soft lithographic techniques: microcontact printing, patterning using microfluidic channels, and laminar flow patterning. These soft lithographic techniques are inexpensive, are procedurally simple, and can be used to pattern a variety of planar and non-planar substrates. Their successful application does not require stringent regulation of the laboratory environment, and they can be used to pattern surfaces with delicate ligands. They provide control over both the surface chemistry and the cellular environment. We discuss both the procedures for patterning based on these soft lithographic techniques, and their applications in biosensor technology, in tissue engineering, and for fundamental studies in cell biology.

  10. Femtolitre chemistry assisted by microfluidic pen lithography

    PubMed Central

    Carbonell, Carlos; Stylianou, Kyriakos C.; Hernando, Jordi; Evangelio, Emi; Barnett, Sarah A.; Nettikadan, Saju; Imaz, Inhar; Maspoch, Daniel

    2013-01-01

    Chemical reactions at ultrasmall volumes are becoming increasingly necessary to study biological processes, to synthesize homogenous nanostructures and to perform high-throughput assays and combinatorial screening. Here we show that a femtolitre reaction can be realized on a surface by handling and mixing femtolitre volumes of reagents using a microfluidic stylus. This method, named microfluidic pen lithography, allows mixing reagents in isolated femtolitre droplets that can be used as reactors to conduct independent reactions and crystallization processes. This strategy overcomes the high-throughput limitations of vesicles and micelles and obviates the usually costly step of fabricating microdevices and wells. We anticipate that this process enables performing distinct reactions (acid-base, enzymatic recognition and metal-organic framework synthesis), creating multiplexed nanoscale metal-organic framework arrays, and screening combinatorial reactions to evaluate the crystallization of novel peptide-based materials. PMID:23863998

  11. Photoresist composition for extreme ultraviolet lithography

    SciTech Connect

    Felter, T.E.; Kubiak, G.D.

    1999-11-23

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4--0.05 {mu}m using projection lithography and extreme ultraviolet (EUV) radiation is disclosed. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  12. Immersion and dry scanner extensions for sub-10nm production nodes

    NASA Astrophysics Data System (ADS)

    Weichselbaum, Stefan; Bornebroek, Frank; de Kort, Toine; Droste, Richard; de Graaf, Roelof F.; van Ballegoij, Rob; Botter, Herman; McLaren, Matthew G.; de Boeij, Wim P.

    2015-03-01

    Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NXT platform have been introduced; among others, the scanner is equipped with exposure stages with better dynamics and thermal control. Grid accuracy improvements with respect to calibration, setup, stability, and layout dependency tighten MMO performance and enable mix and match scanner operation. The same platform improvements also benefit focus control. Improvements in detectability and reproducibility of low contrast alignment marks enhance the alignment solution window for 10nm logic processes and beyond. The system's architecture allows dynamic use of high-order scanner optimization based on advanced actuators of projection lens and scanning stages. This enables a holistic optimization approach for the scanner, the mask, and the patterning process. Productivity scanner design modifications esp. stage speeds and optimization in metrology schemes provide lower layer costs for customers using immersion lithography as well as conventional dry technology. Imaging, overlay, focus, and productivity data is presented, that demonstrates 10nm and 7nm node litho-capability for both (immersion & dry) platforms.

  13. Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

    NASA Astrophysics Data System (ADS)

    Gubiotti, Thomas; Sun, Jeff Fuge; Freed, Regina; Kidwingira, Francoise; Yang, Jason; Bevis, Chris; Carroll, Allen; Brodie, Alan; Tong, William M.; Lin, Shy-Jay; Wang, Wen-Chuan; Haspeslagh, Luc; Vereecke, Bart

    2013-03-01

    Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-volume 10 nm logic node performance. REBL uses a novel multi-column wafer writing system combined with an advanced stage architecture to enable the throughput and resolution required for a NGL system. Using a CMOS Digital Pattern Generator (DPG) chip with over one million microlenses, the system is capable of maskless printing of arbitrary patterns with pixel redundancy and pixel-by-pixel grayscaling at the wafer. Electrons are generated in a flood beam via a thermionic cathode at 50-100 keV and decelerated to illuminate the DPG chip. The DPG-modulated electron beam is then reaccelerated and demagnified 80-100x onto the wafer to be printed. Previously, KLA-Tencor reported on the development progress of the REBL tool for maskless lithography at and below the 10 nm logic technology node. Since that time, the REBL team has made good progress towards developing the REBL system and DPG for direct write lithography. REBL has been successful in manufacturing a CMOS controlled DPG chip with a stable charge drain coating and with all segments functioning. This DPG chip consists of an array of over one million electrostatic lenslets that can be switched on or off via CMOS voltages to pattern the flood electron beam. Testing has proven the validity of the design with regards to lenslet performance, contrast, lifetime, and pattern scrolling. This chip has been used in the REBL demonstration platform system for lithography on a moving stage in both PMMA and chemically amplified resist. Direct imaging of the aerial image has also been performed by magnifying the pattern at the wafer plane via a mag stack onto a YAG imaging screen. This paper will discuss the chip design improvements and new charge drain coating that have resulted in a

  14. Learning Relative Motion Concepts in Immersive and Non-Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Kozhevnikov, Michael; Gurlitt, Johannes; Kozhevnikov, Maria

    2013-01-01

    The focus of the current study is to understand which unique features of an immersive virtual reality environment have the potential to improve learning relative motion concepts. Thirty-seven undergraduate students learned relative motion concepts using computer simulation either in immersive virtual environment (IVE) or non-immersive desktop…

  15. Le Point sur L'immersion au Canada (The Argument for...Immersion in Canada).

    ERIC Educational Resources Information Center

    Rebuffot, Jacques

    A discussion of French immersion education in Canada begins with a general examination of language immersion, including the historical context and social climate from which the immersion approach has grown in Canada, its beginnings in Quebec and spread throughout Canada, and the status of the approach in the United States, a number of European…

  16. Game engines and immersive displays

    NASA Astrophysics Data System (ADS)

    Chang, Benjamin; Destefano, Marc

    2014-02-01

    While virtual reality and digital games share many core technologies, the programming environments, toolkits, and workflows for developing games and VR environments are often distinct. VR toolkits designed for applications in visualization and simulation often have a different feature set or design philosophy than game engines, while popular game engines often lack support for VR hardware. Extending a game engine to support systems such as the CAVE gives developers a unified development environment and the ability to easily port projects, but involves challenges beyond just adding stereo 3D visuals. In this paper we outline the issues involved in adapting a game engine for use with an immersive display system including stereoscopy, tracking, and clustering, and present example implementation details using Unity3D. We discuss application development and workflow approaches including camera management, rendering synchronization, GUI design, and issues specific to Unity3D, and present examples of projects created for a multi-wall, clustered, stereoscopic display.

  17. Initiation of immersed granular avalanches

    NASA Astrophysics Data System (ADS)

    Mutabaruka, Patrick; Delenne, Jean-Yves; Soga, Kenichi; Radjai, Farhang

    2014-05-01

    By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the

  18. Initiation of immersed granular avalanches.

    PubMed

    Mutabaruka, Patrick; Delenne, Jean-Yves; Soga, Kenichi; Radjai, Farhang

    2014-05-01

    By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃ 0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the

  19. Sub-10 nm patterning using EUV interference lithography.

    PubMed

    Päivänranta, Birgit; Langner, Andreas; Kirk, Eugenie; David, Christian; Ekinci, Yasin

    2011-09-16

    Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.

  20. Development of motorized plasma lithography for cell patterning.

    PubMed

    Deguchi, Shinji; Nagasawa, Yohei; Saito, Akira C; Matsui, Tsubasa S; Yokoyama, Sho; Sato, Masaaki

    2014-03-01

    The micropatterning of cells, which restricts the adhesive regions on the substrate and thus controls cell geometry, is used to study mechanobiology-related cell functions. Plasma lithography is a means of providing such patterns and uses a spatially-selective plasma treatment. Conventional plasma lithography employs a positionally-fixed mask with which the geometry of the patterns is determined and thus is not suited for producing on-demand geometries of patterns. To overcome this, we have manufactured a new device with a motorized mask mounted in a vacuum chamber of a plasma generator, which we designate motorized plasma lithography. Our pilot tests indicate that various pattern geometries can be obtained with the control of a shielding mask during plasma treatment. Our approach can thus omit the laborious process of preparing photolithographically microfabricated masks required for the conventional plasma lithography.

  1. Immersive virtual reality simulations in nursing education.

    PubMed

    Kilmon, Carol A; Brown, Leonard; Ghosh, Sumit; Mikitiuk, Artur

    2010-01-01

    This article explores immersive virtual reality as a potential educational strategy for nursing education and describes an immersive learning experience now being developed for nurses. This pioneering project is a virtual reality application targeting speed and accuracy of nurse response in emergency situations requiring cardiopulmonary resuscitation. Other potential uses and implications for the development of virtual reality learning programs are discussed.

  2. Libraries of La Pocatiere: French Immersion Programs

    ERIC Educational Resources Information Center

    Kuntz, Patricia, S.

    2005-01-01

    Many times summer language immersion administrators and instructors overlook the rich collections housed in various town libraries. Students of French immersion programs have an opportunity to utilize local libraries. This essay describes the facilities and services of five libraries in La Pocatiere, Quebec. A series of interviews of librarians…

  3. The Balancing Act of Bilingual Immersion

    ERIC Educational Resources Information Center

    Hadi-Tabassum, Samina

    2005-01-01

    Hadi-Tabassum believes having a separate life context for each language she learned in childhood enabled her to switch easily among five different tongues. She states that the success of dual immersion bilingual programs is largely dependent on whether they immerse students in each of the involved languages separately and help students have a…

  4. Wedge immersed thermistor bolometer measures infrared radiation

    NASA Technical Reports Server (NTRS)

    Dreyfus, M. G.

    1965-01-01

    Wedge immersed-thermistor bolometer measures infrared radiation in the atmosphere. The thermistor flakes are immersed by optical contact on a wedge-shaped germanium lens whose narrow dimension is clamped between two complementary wedge-shaped germanium blocks bonded with a suitable adhesive.

  5. The Two-Way Immersion Toolkit

    ERIC Educational Resources Information Center

    Howard, Elizabeth; Sugarman, Julie; Perdomo, Marleny; Adger, Carolyn Temple

    2005-01-01

    This Toolkit is meant to be a resource for teachers, parents, and administrators involved with two-way immersion (TWI) programs, particularly those at the elementary level. Two-way immersion is a form of dual language instruction that brings together students from two native language groups for language, literacy, and academic content instruction…

  6. Immersive 3D Geovisualization in Higher Education

    ERIC Educational Resources Information Center

    Philips, Andrea; Walz, Ariane; Bergner, Andreas; Graeff, Thomas; Heistermann, Maik; Kienzler, Sarah; Korup, Oliver; Lipp, Torsten; Schwanghart, Wolfgang; Zeilinger, Gerold

    2015-01-01

    In this study, we investigate how immersive 3D geovisualization can be used in higher education. Based on MacEachren and Kraak's geovisualization cube, we examine the usage of immersive 3D geovisualization and its usefulness in a research-based learning module on flood risk, called GEOSimulator. Results of a survey among participating students…

  7. Astronomical large Ge immersion grating by Canon

    NASA Astrophysics Data System (ADS)

    Sukegawa, Takashi; Suzuki, Takeshi; Kitamura, Tsuyoshi

    2016-07-01

    Immersion grating is a powerful optical device for thee infrared high-resolution spectroscope. Germanium (GGe) is the best material for a mid-infrared immersion grating because of Ge has very large reflective index (n=4.0). On the other hands, there is no practical Ge immersion grating under 5umm use. It was very difficult for a fragile IR crystal to manufacture a diffraction grating precisely. Our original free-forming machine has accuracy of a few nano-meter in positioning and stability. We already fabricated the large CdZnTe immersion grating. (Sukegawa et al. (2012), Ikeda et al. (2015)) Wee are developing Ge immersion grating that can be a good solution for high-resolution infrared spectroscopy with the large ground-based/space telescopes. We succeeded practical Ge immersion grating with the grooved area off 75mm (ruled direction) x 119mm (grove width) and the blaze angle of 75 degrees. Our astronomical large Ge immersion grating has the grooved area of 155mm (ruled direction) x 41mmm (groove width) and groove pitch off 91.74um. We also report optical performance of astronomical large Ge immersion grating with a metal coating on the diffraction surface.

  8. Social Interaction Development through Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Beach, Jason; Wendt, Jeremy

    2014-01-01

    The purpose of this pilot study was to determine if participants could improve their social interaction skills by participating in a virtual immersive environment. The participants used a developing virtual reality head-mounted display to engage themselves in a fully-immersive environment. While in the environment, participants had an opportunity…

  9. Bringing Chinese Immersion to Western Massachusetts

    ERIC Educational Resources Information Center

    Wang, Kathleen

    2009-01-01

    This article describes the Pioneer Valley Chinese Immersion Charter School (PVCICS), a regional public charter school in western Massachusetts, which opened in 2007 and the only Chinese immersion school in New England. The school draws students from over twenty-five towns and cities in a predominantly rural area of Massachusetts that includes the…

  10. Research on evaluation techniques for immersive multimedia

    NASA Astrophysics Data System (ADS)

    Hashim, Aslinda M.; Romli, Fakaruddin Fahmi; Zainal Osman, Zosipha

    2013-03-01

    Nowadays Immersive Multimedia covers most usage in tremendous ways, such as healthcare/surgery, military, architecture, art, entertainment, education, business, media, sport, rehabilitation/treatment and training areas. Moreover, the significant of Immersive Multimedia to directly meet the end-users, clients and customers needs for a diversity of feature and purpose is the assembly of multiple elements that drive effective Immersive Multimedia system design, so evaluation techniques is crucial for Immersive Multimedia environments. A brief general idea of virtual environment (VE) context and `realism' concept that formulate the Immersive Multimedia environments is then provided. This is followed by a concise summary of the elements of VE assessment technique that is applied in Immersive Multimedia system design, which outlines the classification space for Immersive Multimedia environments evaluation techniques and gives an overview of the types of results reported. A particular focus is placed on the implications of the Immersive Multimedia environments evaluation techniques in relation to the elements of VE assessment technique, which is the primary purpose of producing this research. The paper will then conclude with an extensive overview of the recommendations emanating from the research.

  11. Evolution in the concentration of activities in lithography

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    2016-03-01

    From a perusal of the proceedings of the SPIE Advanced Lithography Symposium, the progression of new concepts in lithographic technology can be seen. A new idea first appears in a few papers, and over time, there is an increase in the number of papers on the same topic. Eventually the method becomes commonplace, and the number of papers on the topic declines, as the idea becomes part of our industry's working knowledge. For example, one or two papers on resolution enhancement techniques (RETs) appeared in the proceedings of the Optical Microlithography Conference in 1989 and 1990. By 1994, the total number of papers had increased to 35. Early lithographers focused on practical issues, such as adhesion promotion and resist edge bead. The introduction of simulation software brought on the next era of lithography. This was followed by a period of time in which RETs were developed and brought to maturity. The introduction of optical proximity corrections (OPC) initiated the next major era of lithography. The traditional path for scaling by using shorter wavelengths, decreasing k1 and increasing numerical aperture has given way to the current era of optical multiple patterning and lithography-design co-optimization. There has been sufficient activity in EUV lithography R and D to justify a separate EUV Lithography Conference as part of the annual Advanced Lithography Symposium. Each era builds on the cumulative knowledge gained previously. Over time, there have been parallel developments in optics, exposure tools, resist, metrology and mask technology, many of which were associated with changes in the wavelength of light used for leading-edge lithography.

  12. Application of optical CD metrology for alternative lithography

    NASA Astrophysics Data System (ADS)

    Asano, Masafumi; Kawamoto, Akiko; Matsuki, Kazuto; Godny, Stephane; Lin, Tingsheng; Wakamoto, Koichi

    2013-04-01

    Directed self-assembly (DSA) and nanoimprint lithography (NIL) have been widely developed for low-cost nanoscale patterning. Although they are currently regarded as "alternative lithography," some papers show their potential to be candidates for next-generation lithography (NGL). To actualize the potential, the contribution of metrology engineers is necessary. Since the characteristics of the lithography techniques are different from those of conventional lithography, new metrology schemes correlated with each characteristic are required. In DSA of block copolymer (BCP), a guide is needed to control the direction and position of BCP. Therefore, it is necessary to monitor the relationship between the guide and the BCP pattern. Since the depth of guide or the coating thickness variation of BCP over guide influences the behavior of phase separation of BCP, 3D metrology becomes increasingly important. In NIL, residual resist thickness (RLT) underneath the pattern should be measured because its variation affects the CD variation of transferred pattern. 3D metrology is also important in NIL. Optical critical dimension (OCD) metrology will be a powerful tool for 3D metrology. In this work, some applications of OCD for alternative lithography have been studied. For DSA, we have tried to simultaneously monitor the guide and BCP pattern in a DSA-based contact hole shrinking process. Sufficient measurement accuracy for CD and shapes for guide and BCP patterns was achievable. For NIL, sufficient sensitivity to RLT measurement was obtained.

  13. Successful demonstration of a comprehensive lithography defect monitoring strategy

    NASA Astrophysics Data System (ADS)

    Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

    2003-07-01

    This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the

  14. Single-photon emitters based on NIR color centers in diamond coupled with solid immersion lenses

    NASA Astrophysics Data System (ADS)

    Monticone, D. Gatto; Forneris, J.; Levi, M.; Battiato, A.; Picollo, F.; Olivero, P.; Traina, P.; Moreva, E.; Enrico, E.; Brida, G.; Degiovanni, I. P.; Genovese, M.; Amato, G.; Boarino, L.

    2014-12-01

    Single-photon sources represent a key enabling technology in quantum optics, and single color centers in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen-vacancy (NV) centers are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centers emitting in the near-infra red (NIR). In the present work, we report on the coupling of native NIR-emitting centers in high-quality single-crystal diamond with solid immersion lens (SIL) structures fabricated by focused ion beam (FIB) lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.

  15. Fabrication of subwavelength holes using nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Weiss, A.; Besser, J.; Baum, M.; Saupe, R.; Otto, T.; Gessner, T.

    2013-03-01

    Driven by the demand of miniaturized and highly integrated functionalities in the area of photonics and photonic circuits, the metal or plasmon optics has become a promising method for manipulating light at the nanometer scale. Especially the application of periodic sub wavelength hole structures within an opaque metal film on a dielectric substrate holds many advantages for the realization of optical filters, since the variation of the hole diameter and the periodicity allows a selective filter response. This paper is concerned with the modeling, fabrication and characterization of a sub wavelength hole array for surface plasmon enhanced transmission of light [1]. The theoretical backgrounds as well as the basics of the simulation by Finite-Difference Time-Domain (FDTD) are described for the target structure with a hole diameter of 180 nm and a periodicity of 400 nm. By using a double-molding technology via nanoimprint lithography the fabrication of this sub wavelength hole array with a peak wavelength of 470 nm and full width at half maximum of 50 nm from a silicon nanopillar master is demonstrated. In order to ensure the dimensional stability of the molded structures, characterization was consequently done by means of a self made non-contact mode atomic force microscope.

  16. Maskless plasmonic lithography at 22 nm resolution.

    PubMed

    Pan, Liang; Park, Yongshik; Xiong, Yi; Ulin-Avila, Erick; Wang, Yuan; Zeng, Li; Xiong, Shaomin; Rho, Junsuk; Sun, Cheng; Bogy, David B; Zhang, Xiang

    2011-01-01

    Optical imaging and photolithography promise broad applications in nano-electronics, metrologies, and single-molecule biology. Light diffraction however sets a fundamental limit on optical resolution, and it poses a critical challenge to the down-scaling of nano-scale manufacturing. Surface plasmons have been used to circumvent the diffraction limit as they have shorter wavelengths. However, this approach has a trade-off between resolution and energy efficiency that arises from the substantial momentum mismatch. Here we report a novel multi-stage scheme that is capable of efficiently compressing the optical energy at deep sub-wavelength scales through the progressive coupling of propagating surface plasmons (PSPs) and localized surface plasmons (LSPs). Combining this with airbearing surface technology, we demonstrate a plasmonic lithography with 22 nm half-pitch resolution at scanning speeds up to 10 m/s. This low-cost scheme has the potential of higher throughput than current photolithography, and it opens a new approach towards the next generation semiconductor manufacturing.

  17. Coherence management in lithography printing systems

    NASA Astrophysics Data System (ADS)

    Bernasconi, Johana; Scharf, Toralf; Herzig, Hans Peter; Voelkel, Reinhard; Bramati, Arianna

    2016-03-01

    In proximity lithography, interference and diffraction effects arise when printing small features because of the proximity gap. Different techniques are used in order to control and take advantage of these effects. In this paper, the focus is set on the MO Exposure Optics developed to shape the angular spectrum of the exposure light. The MO Exposure Optics contains several elements including microlens arrays that have certain symmetry and sampling. The MO Exposure Optics allows to set the angle of illumination and can be used to define spatial coherence. We study here in detail the influence of different illumination settings on optical proximity correction (OPC) structures. We apply this concept for the first time to a LED illumination. The propagation of light after an optical proximity correction structure is measured by recording aerial images over a distance of up to 60 μm behind the mask with a high resolution microscope setup.1 As an example structure, we investigate here an optical proximity correction structure that is intended to make the edge of a line sharper. Using illumination filter plates that limit the angle of illumination and increase the coherence lead to pronounced interference effects in aerial images as expected. But special settings of the illumination allow to achieve comparable results with much larger illumination angles and higher throughput. We will show examples and analyze the results

  18. Resist profile simulation with fast lithography model

    NASA Astrophysics Data System (ADS)

    He, Yan-Ying; Chou, Chih-Shiang; Tang, Yu-Po; Huang, Wen-Chun; Liu, Ru-Gun; Gau, Tsai-Sheng

    2014-03-01

    A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for OPC modeling. As the technology moves forward, this traditional approach has become insufficient in regard to lithography weak point detection, etching bias prediction, etc. The drawback of this approach is from metrology and simulation. First, top-down SEM is only good for acquiring planar CD information. Some 3D metrology such as cross-section SEM or AFM is necessary to obtain the true resist profile. Second, the TCC modeling approach is only suitable for planar image simulation. In order to model the resist profile, full 3D image simulation is needed. Even though there are many rigorous simulators capable of catching the resist profile very well, none of them is feasible for full-chip application due to the tremendous consumption of computational resource. The authors have proposed a quasi-3D image simulation method in the previous study [1], which is suitable for full-chip simulation with the consideration of sidewall angles, to improve the model accuracy of planar models. In this paper, the quasi-3D image simulation is extended to directly model the resist profile with AFM and/or cross-section SEM data. Resist weak points detected by the model generated with this 3D approach are verified on the wafer.

  19. Evaporative Lithography in Open Microfluidic Channel Networks.

    PubMed

    Lone, Saifullah; Zhang, Jia Ming; Vakarelski, Ivan U; Li, Er Qiang; Thoroddsen, Sigurdur T

    2017-03-13

    We demonstrate a direct capillary-driven method based on wetting and evaporation of various suspensions to fabricate regular two-dimensional wires in an open microfluidic channel through continuous deposition of micro- or nanoparticles under evaporative lithography, akin to the coffee-ring effect. The suspension is gently placed in a loading reservoir connected to the main open microchannel groove on a PDMS substrate. Hydrophilic conditions ensure rapid spreading of the suspension from the loading reservoir to fill the entire channel length. Evaporation during the spreading and after the channel is full increases the particle concentration toward the end of the channel. This evaporation-induced convective transport brings particles from the loading reservoir toward the channel end where this flow deposits a continuous multilayered particle structure. The particle deposition front propagates backward over the entire channel length. The final dry deposit of the particles is thereby much thicker than the initial volume fraction of the suspension. The deposition depth is characterized using a 3D imaging profiler, whereas the deposition topography is revealed using a scanning electron microscope. The patterning technology described here is robust and passive and hence operates without an external field. This work may well become a launching pad to construct low-cost and large-scale thin optoelectronic films with variable thicknesses and interspacing distances.

  20. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 μm wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  1. Pattern collapse mitigation strategies for EUV lithography

    NASA Astrophysics Data System (ADS)

    Goldfarb, Dario L.; Bruce, Robert L.; Bucchignano, James J.; Klaus, David P.; Guillorn, Michael A.; Wu, Chunghsi J.

    2012-03-01

    In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO2) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

  2. Analysis of the blurring in stencil lithography.

    PubMed

    Vazquez-Mena, O; Villanueva, L G; Savu, V; Sidler, K; Langlet, P; Brugger, J

    2009-10-14

    A quantitative analysis of blurring and its dependence on the stencil-substrate gap and the deposition parameters in stencil lithography, a high resolution shadow mask technique, is presented. The blurring is manifested in two ways: first, the structure directly deposited on the substrate is larger than the stencil aperture due to geometrical factors, and second, a halo of material is formed surrounding the deposited structure, presumably due to surface diffusion. The blurring is studied as a function of the gap using dedicated stencils that allow a controlled variation of the gap. Our results show a linear relationship between the gap and the blurring of the directly deposited structure. In our configuration, with a material source of approximately 5 mm and a source-substrate distance of 1 m, we find that a gap size of approximately 10 microm enlarges the directly deposited structures by approximately 50 nm. The measured halo varies from 0.2 to 3 microm in width depending on the gap, the stencil aperture size and other deposition parameters. We also show that the blurring can be reduced by decreasing the nominal deposition thickness, the deposition rate and the substrate temperature.

  3. Materials for future lithography (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Chang, Seung Wook; Yang, Da; Dai, Junyan; Felix, Nelson; Bratton, Daniel; Tsuchiya, Kousuke; Kwark, Young-Je; Bravo-Vasquez, Juan-Pablo; Ober, Christopher K.; Cao, Heidi B.; Deng, Hai

    2005-05-01

    The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl

  4. X-ray lithography using holographic images

    DOEpatents

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  5. Smartphone Sensors for Stone Lithography Authentication

    PubMed Central

    Schirripa Spagnolo, Giuseppe; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to “authenticate” non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the “not original artwork” is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  6. Metal hierarchical patterning by direct nanoimprint lithography

    PubMed Central

    Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

    2013-01-01

    Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

  7. Proximity correction for electron beam lithography

    NASA Astrophysics Data System (ADS)

    Marrian, Christie R.; Chang, Steven; Peckerar, Martin C.

    1996-09-01

    As the critical dimensions required in mask making and direct write by electron beam lithography become ever smaller, correction for proximity effects becomes increasingly important. Furthermore, the problem is beset by the fact that only a positive energy dose can be applied with an electron beam. We discuss techniques such as chopping and dose shifting, which have been proposed to meet the positivity requirement. An alternative approach is to treat proximity correction as an optimization problem. Two such methods, local area dose correction and optimization using a regularizer proportional to the informational entropy of the solution, are compared. A notable feature of the regularized proximity correction is the ability to correct for forward scattering by the generation of a 'firewall' set back from the edge of a feature. As the forward scattering width increases, the firewall is set back farther from the feature edge. The regularized optimization algorithm is computationally time consuming using conventional techniques. However, the algorithm lends itself to a microelectronics integrated circuit coprocessor implementation, which could perform the optimization faster than even the fastest work stations. Scaling the circuit to larger number of pixels is best approached with a hybrid serial/parallel digital architecture that would correct for proximity effects over 108 pixels in about 1 h. This time can be reduced by simply adding additional coprocessors.

  8. Photogrammetric Applications of Immersive Video Cameras

    NASA Astrophysics Data System (ADS)

    Kwiatek, K.; Tokarczyk, R.

    2014-05-01

    The paper investigates immersive videography and its application in close-range photogrammetry. Immersive video involves the capture of a live-action scene that presents a 360° field of view. It is recorded simultaneously by multiple cameras or microlenses, where the principal point of each camera is offset from the rotating axis of the device. This issue causes problems when stitching together individual frames of video separated from particular cameras, however there are ways to overcome it and applying immersive cameras in photogrammetry provides a new potential. The paper presents two applications of immersive video in photogrammetry. At first, the creation of a low-cost mobile mapping system based on Ladybug®3 and GPS device is discussed. The amount of panoramas is much too high for photogrammetric purposes as the base line between spherical panoramas is around 1 metre. More than 92 000 panoramas were recorded in one Polish region of Czarny Dunajec and the measurements from panoramas enable the user to measure the area of outdoors (adverting structures) and billboards. A new law is being created in order to limit the number of illegal advertising structures in the Polish landscape and immersive video recorded in a short period of time is a candidate for economical and flexible measurements off-site. The second approach is a generation of 3d video-based reconstructions of heritage sites based on immersive video (structure from immersive video). A mobile camera mounted on a tripod dolly was used to record the interior scene and immersive video, separated into thousands of still panoramas, was converted from video into 3d objects using Agisoft Photoscan Professional. The findings from these experiments demonstrated that immersive photogrammetry seems to be a flexible and prompt method of 3d modelling and provides promising features for mobile mapping systems.

  9. [Adaptive effects of repeated immersion exposure on the human body].

    PubMed

    Shul'zhenko, E B; Kozlova, V G; Aleksandrova, E A; Kudrin, K A

    1984-01-01

    The effect of intermittent immersion on orthostatic tolerance, fluid-electrolyte metabolism and neuromuscular system was investigated. Control and experimental immersions were used. Experimental immersion was preceded by 12-hour exposure to immersion at night for three times. Experimental immersion was accompanied by reduced renal excretion of fluid, sodium and potassium and normalization of the muscle tone. After experimental immersion orthostatic tolerance approached the control level. The difference in the physiological effects of control and experimental immersions seem to be associated with the capacity of the human body to adapt to immersion, if it is applied intermittently.

  10. High-efficiency diffractive beam splitters surface-structured on submicrometer scale using deep-UV interference lithography.

    PubMed

    Amako, Jun; Sawaki, Daisuke; Fujii, Eiichi

    2009-09-20

    We report highly efficient diffractive beam splitters intended for high-power laser applications. Submicron relief structures that work as an antireflective layer are formed on the surfaces of a splitter to improve its transmitted efficiency. Surface structuring is performed using deep-UV interference lithography and reactive ion etching. As immersed in an index-matching liquid, the resist layer coated on diffractive surfaces is exposed to the interference fringes that are set intersecting the grooves on the surfaces. Rigorously designed structures with a period of 140 nm and a depth of 55 nm are lithographed onto fused-silica splitters. Splitting efficiencies at 266 nm are increased by 8% to compare favorably with a theoretical value, while Fresnel reflections are considerably reduced.

  11. Immersion diuresis without expected suppression of vasopressin

    NASA Technical Reports Server (NTRS)

    Keil, L. C.; Silver, J. E.; Wong, N.; Spaul, W. A.; Greenleaf, J. E.; Kravik, S. E.

    1984-01-01

    There is a shift of blood from the lower parts of the body to the thoracic circulation during bed rest, water immersion, and presumably during weightlessness. On earth, this central fluid shift is associated with a profound diuresis. However, the mechanism involved is not yet well understood. The present investigation is concerned with measurements regarding the plasma vasopressin, fluid, electrolyte, and plasma renin activity (PRA) responses in subjects with normal preimmersion plasma vasopressin (PVP) concentration. In the conducted experiments, PRA was suppressed significantly at 30 min of immersion and had declined by 74 percent by the end of the experiment. On the basis of previously obtained results, it appears that sodium excretion during immersion may be independent of aldosterone action. Experimental results indicate that PVP is not suppressed by water immersion in normally hydrated subjects and that other factors may be responsible for the diuresis.

  12. Intelligent control system based on ARM for lithography tool

    NASA Astrophysics Data System (ADS)

    Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

    2014-08-01

    The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

  13. Neutral atom lithography with metastable helium

    NASA Astrophysics Data System (ADS)

    Allred, Claire Shean

    In this dissertation we describe our performance of resist assisted neutral atom lithography using a bright beam of metastable 23S1 Helium (He*). Metastable Helium atoms have 20 eV of internal energy making them easy to detect and able to destroy a resist. The He* is produced by a reverse flow DC discharge source and then collimated with the bichromatic force, followed by three optical molasses velocity compression stages. The atoms in the resulting beam have a mean longitudinal velocity of 1125 m/s and a divergence of 1.1 mrad. The typical beam flux is 2 x 109 atoms/mm2s through a 0.1mm diameter aperture 70 cm away from the source. The internal energy of the atoms damages the molecules of a self assembled monolayer (SAM) of nonanethiol. The undisturbed SAM protects a 200 A layer of gold that has been evaporated onto a prepared Silicon wafer from a wet chemical etch. Two methods are used to pattern the He* atoms before they destroy the SAM. First, a Nickel micro mesh was used to protect the SAM. These experiments established an appropriate dosage and etch time for patterning. The samples were analyzed with an atomic force microscope and found to have an edge resolution of 63 nm. Then, patterning was accomplished using the dipole force the atoms experience while traversing a standing wave of lambda = 1083nm light tuned 500MHz below the 23S 1 → 23P2 transition. Depending on the intensity of the light, the He* atoms are focused or channeled into lines separated by lambda/2. The lines cover the entire exposed length of the substrate, about 3 mm. They are about 3 mm long, corresponding to about twice the beam waist of the laser standing wave. Thus there are 6 x 10 3 lines of length 5500lambda. These results agree with our numerical simulations of the experiment.

  14. 3D resolution gray-tone lithography

    NASA Astrophysics Data System (ADS)

    Dumbravescu, Niculae

    2000-04-01

    With the conventional micro machining technologies: isotropic and anisotropic, dry and wet etching, a few shapes can be done. To overcome this limitation, both binary multi- tasking technique or direct EB writing were used, but an inexpensive one-step UV-lithographic method, using a so- called 'gray-tone reticle', seems to be the best choice to produce local intensity modulation during exposure process. Although, by using this method and common technologies in standard IC fabrication it is easy to obtain an arbitrarily 3D shaping of positive thick resists, there are some limitations, too. The maximum number of gray-levels, on projection reticle, achieved by e-beam writing, are only 200. Also, for very thick resists, the limited focus depth of the projection objective gives a poor lateral resolution. These are the reasons why the author prose da new approach to enhance the 3D resolution of gray-tone lithography applied for thick resist. By a high resolution, both for vertical direction, as well as for horizontal direction. Particular emphasis was put on the design, manufacturing and use of halftone transmission masks, required for UV- lithographic step in the fabrication process of mechanical, optical or electronics components. The original design and fabrication method for the gray-tone test reticle were supported by experiments showing the main advantage of this new technology: the 3D structuring of thick resist in a single exposure step and also a very promising aspect ratio obtained of over 9:1. Preliminary experimental results are presented for positive thick resists in SEM micrographs. A future optimization of the lithographic process opens interesting perspectives for application of this high 3D resolution structuring method in the fabrication process of different products, with imposed complex smooth profiles, such as: x-ray LiGA-masks, refractive optics and surface- relief DOEs.

  15. Antireflective surface patterned by rolling mask lithography

    NASA Astrophysics Data System (ADS)

    Seitz, Oliver; Geddes, Joseph B.; Aryal, Mukti; Perez, Joseph; Wassei, Jonathan; McMackin, Ian; Kobrin, Boris

    2014-03-01

    A growing number of commercial products such as displays, solar panels, light emitting diodes (LEDs and OLEDs), automotive and architectural glass are driving demand for glass with high performance surfaces that offer anti-reflective, self-cleaning, and other advanced functions. State-of-the-art coatings do not meet the desired performance characteristics or cannot be applied over large areas in a cost-effective manner. "Rolling Mask Lithography" (RML™) enables highresolution lithographic nano-patterning over large-areas at low-cost and high-throughput. RML is a photolithographic process performed using ultraviolet (UV) illumination transmitted through a soft cylindrical mask as it rolls across a substrate. Subsequent transfer of photoresist patterns into the substrate is achieved using an etching process, which creates a nanostructured surface. The current generation exposure tool is capable of patterning one-meter long substrates with a width of 300 mm. High-throughput and low-cost are achieved using continuous exposure of the resist by the cylindrical photomask. Here, we report on significant improvements in the application of RML™ to fabricate anti-reflective surfaces. Briefly, an optical surface can be made antireflective by "texturing" it with a nano-scale pattern to reduce the discontinuity in the index of refraction between the air and the bulk optical material. An array of cones, similar to the structure of a moth's eye, performs this way. Substrates are patterned using RML™ and etched to produce an array of cones with an aspect ratio of 3:1, which decreases the reflectivity below 0.1%.

  16. Conformal Visualization for Partially-Immersive Platforms

    PubMed Central

    Petkov, Kaloian; Papadopoulos, Charilaos; Zhang, Min; Kaufman, Arie E.; Gu, Xianfeng

    2010-01-01

    Current immersive VR systems such as the CAVE provide an effective platform for the immersive exploration of large 3D data. A major limitation is that in most cases at least one display surface is missing due to space, access or cost constraints. This partially-immersive visualization results in a substantial loss of visual information that may be acceptable for some applications, however it becomes a major obstacle for critical tasks, such as the analysis of medical data. We propose a conformal deformation rendering pipeline for the visualization of datasets on partially-immersive platforms. The angle-preserving conformal mapping approach is used to map the 360°3D view volume to arbitrary display configurations. It has the desirable property of preserving shapes under distortion, which is important for identifying features, especially in medical data. The conformal mapping is used for rasterization, realtime raytracing and volume rendering of the datasets. Since the technique is applied during the rendering, we can construct stereoscopic images from the data, which is usually not true for image-based distortion approaches. We demonstrate the stereo conformal mapping rendering pipeline in the partially-immersive 5-wall Immersive Cabin (IC) for virtual colonoscopy and architectural review. PMID:26279083

  17. Recent developments of x-ray lithography in Canada

    NASA Astrophysics Data System (ADS)

    Chaker, Mohamed; Boily, Stephane; Ginovker, A.; Jean, Alain; Kieffer, Jean-Claude; Mercier, P. P.; Pepin, Henri; Leung, Pak; Currie, John F.; Lafontaine, Hugues

    1991-08-01

    An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

  18. Thickness optimization for lithography process on silicon substrate

    NASA Astrophysics Data System (ADS)

    Su, Xiaojing; Su, Yajuan; Liu, Yansong; Chen, Fong; Liu, Zhimin; Zhang, Wei; Li, Bifeng; Gao, Tao; Wei, Yayi

    2015-03-01

    With the development of the lithography, the demand for critical dimension (CD) and CD uniformity (CDU) has reached a new level, which is harder and harder to achieve. There exists reflection at the interface between photo-resist and substrate during lithography exposure. This reflection has negative impact on CD and CDU control. It is possible to optimize the litho stack and film stack thickness on different lithography conditions. With the optimized stack, the total reflectivity for all incident angles at the interface can be controlled less than 0.5%, ideally 0.1%, which enhances process window (PW) most of the time. The theoretical results are verified by the experiment results from foundry, which helps the foundry achieve the mass production finally.

  19. Deconstructing contact hole CD printing variability in EUV lithography

    NASA Astrophysics Data System (ADS)

    Civay, D.; Wallow, T.; Doganaksoy, N.; Verduijn, E.; Schmid, G.; Mangat, P.

    2014-04-01

    Lithographic CD printing variability can be easily captured with a CDU measurement, however delineating the most significant sources causing the variability is challenging. In EUV lithography, the resist, reticle, metrology methodology, and stochastics are examples of factors that influence printing variability. Determining the most significant sources of variability in contact hole and via patterning is particularly interesting because the variability can be measured as a function of two tethered dimensions. Contact hole (CH) variability has a direct impact on device performance while via variability affects metal area scaling and design. By studying sources of variability opportunities for improving device performance and scaling can be identified. In this paper, we will examine sources of contact patterning variability in EUV lithography comprehensively using various EUV exposure tools as well as simulation methods. We will present a benchmark of current state of the art materials and patterning methods with the goal of assessing contact hole printability at the limit of 0.33 NA EUV lithography.

  20. Sequence-Specific Molecular Lithography on Single DNA Molecules

    NASA Astrophysics Data System (ADS)

    Keren, Kinneret; Krueger, Michael; Gilad, Rachel; Ben-Yoseph, Gdalyahu; Sivan, Uri; Braun, Erez

    2002-07-01

    Recent advances in the realization of individual molecular-scale electronic devices emphasize the need for novel tools and concepts capable of assembling such devices into large-scale functional circuits. We demonstrated sequence-specific molecular lithography on substrate DNA molecules by harnessing homologous recombination by RecA protein. In a sequence-specific manner, we patterned the coating of DNA with metal, localized labeled molecular objects and grew metal islands on specific sites along the DNA substrate, and generated molecularly accurate stable DNA junctions for patterning the DNA substrate connectivity. In our molecular lithography, the information encoded in the DNA molecules replaces the masks used in conventional microelectronics, and the RecA protein serves as the resist. The molecular lithography works with high resolution over a broad range of length scales from nanometers to many micrometers.

  1. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  2. Reducing DfM to practice: the lithography manufacturability assessor

    NASA Astrophysics Data System (ADS)

    Liebmann, Lars; Mansfield, Scott; Han, Geng; Culp, James; Hibbeler, Jason; Tsai, Roger

    2006-03-01

    The need for accurate quantification of all aspects of design for manufacturability using a mutually compatible set of quality-metrics and units-of-measure, is reiterated and experimentally verified. A methodology to quantify the lithography component of manufacturability is proposed and its feasibility demonstrated. Three stages of lithography manufacturability assessment are described: process window analysis on realistic integrated circuits following layout manipulations for resolution enhancement and the application of optical proximity correction, failure sensitivity analysis on simulated achievable dimensional bounds (a.k.a. variability bands), and yield risk analysis on iso-probability bands. The importance and feasibility of this technique is demonstrated by quantifying the lithography manufacturability impact of redundant contact insertion and Critical Area optimization in units that can be used to drive an overall layout optimization. The need for extensive experimental calibration and improved simulation accuracy is also highlighted.

  3. Pattern-integrated interference lithography: prospects for nano- and microelectronics.

    PubMed

    Leibovici, Matthieu C R; Burrow, Guy M; Gaylord, Thomas K

    2012-10-08

    In recent years, limitations in optical lithography have challenged the cost-effective manufacture of nano- and microelectronic chips. Spatially regular designs have been introduced to improve manufacturability. However, regular designed layouts typically require an interference step followed by a trim step. These multiple steps increase cost and reduce yield. In the present work, Pattern-Integrated Interference Lithography (PIIL) is introduced to address this problem. PIIL is the integration of interference lithography and superposed pattern mask imaging, combining the interference and the trim into a single-exposure step. Example PIIL implementations and experimental demonstrations are presented. The degrees of freedom associated with the source, pattern mask, and Fourier filter designs are described.

  4. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  5. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  6. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  7. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  8. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  9. Partitioning of Excess Energy in the Photolysis of ClCN and BrCN at 193 NM.

    DTIC Science & Technology

    1982-04-08

    7c orbital, and thus concluded that the upper state was a linear III system. Rabelais , et al (12), in a study of the electronic structure of sixteen...thea continuum corresponds to a (OA’ or IA") * XlE + ) transition. If Rabelais , et al are correct in their conclusion that the excited state is bent

  10. Coaxial Measurement of the Translational Distribution of CS Produced in the Laser Photolysis of CS2 at 193nm.

    DTIC Science & Technology

    1983-11-04

    IKasakawi, and R. Bersohn, J. Chemn. Phys. 72, 4058 (1980). *2. M.C. Addison, C.D. Bryne and R.J. Donovan, Chem. Phys. Letters, 64, 57 (1979). *3. J.E...population of CS2 fragments produced in processes: (a). CS2- + hV CS ( Z ,v" ) + S (3p) represented by 0; (b). CS2 + hv CS (X1 Z +,v") + S (1D...0 0 1 1 1 fl l i 0 z 0 - >0 -) p ~m 0 z D:O m l CCD X CA > 0__ -" -’ o- o 0 -0 "C 0 o 00 CL CL 0 0 -." - ’ .:.-:.- "- * -.5

  11. ILT for double exposure lithography with conventional and novel materials

    NASA Astrophysics Data System (ADS)

    Poonawala, Amyn; Borodovsky, Yan; Milanfar, Peyman

    2007-03-01

    Multiple paths exists to provide lithography solutions pursuant to Moore's Law for next 3-5 generations of technology, yet each of those paths inevitably leads to solutions eventually requiring patterning at k I < 0.30 and below. In this article, we explore double exposure single development lithography for k I >= 0.25 (using conventional resist) and k1 < 0.25 (using new out-of-sight out-of-mind materials). For the case of k I >= 0.25, we propose a novel double exposure inverse lithography technique (ILT) to split the pattern. Our algorithm is based on our earlier proposed single exposure ILT framework, and works by decomposing the aerial image (instead of the target pattern) into two parts. It also resolves the phase conflicts automatically as part of the decomposition, and the combined aerial image obtained using the estimated masks has a superior contrast. For the case of k I < 0.25, we focus on analyzing the use of various dual patterning techniques enabled by the use of hypothetic materials with properties that allow for the violation of the linear superposition of intensities from the two exposures. We investigate the possible use of two materials: contrast enhancement layer (CEL) and two-photon absorption resists. We propose a mathematical model for CEL, define its characteristic properties, and derive fundamental bounds on the improvement in image log-slope. Simulation results demonstrate that double exposure single development lithography using CEL enables printing 80nm gratings using dry lithography. We also combine ILT, CEL, and DEL to synthesize 2-D patterns with k I = 0.185. Finally, we discuss the viability of two-photon absorption resists for double exposure lithography.

  12. The study of chromeless phase lithography (CPL) for 45nm lithography

    NASA Astrophysics Data System (ADS)

    Tan, Soon Yoeng; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2006-10-01

    Chromeless Phase Lithography (CPL) has been used to achieve high resolution by using phase edge interference in addition with high NA and off-axis illuminations such as annular and quasar for sub-wavelength lithography. There are two types of CPL. One is the totally chromeless pure phase type and the other is the zebra chrome pattern type for critical line dimensions. Both types of CPL masks require adding in chrome pads in some structures such as circuit line junction region to improve the resolution. Zebra type CPL mask making has reached the limitation due to small chrome peeling issue during mask cleaning and small space writing resolution issue for sub-45nm technology. In this paper, two types of CPL masks are studied. The investigation shows the differences on mask making and wafer performance. For mask making, process limitation studies such as writing, etching and cleaning will be evaluated. Data on mask CD (Critical Dimension) performance, registration, overlay, phase and transmission are collected and analyzed. For wafer performance, process window comparison, CD through pitch, MEEF (Mask Error Enhancement Factor) and linearity will be characterized for these two CPL mask types. Minimum resolution of less than 160nm pitch with reasonable good process window has been achieved with both mask types. Chromeless pure phase type has advantages on mask making while zebra type has the advantages on wafer performance. Furthermore, SRAF (Sub-Resolution Assist Feature) are added to improve wafer printing process windows. Detailed characterization work done on assist features are presented. Assist feature can improve process window by improving the contrast of isolated lines.

  13. High-fidelity replication of Dammann gratings using soft lithography.

    PubMed

    Wang, Wei; Zhou, Changhe; Jia, Wei

    2008-04-01

    We report the experimental results of using the soft lithography method for replication of Dammann gratings. By using an elastomeric stamp, uniform grating structures were transferred to the UV-curable polymer. To evaluate the quality of the replication, diffraction images and light intensity were measured. Compared with the master devices, the replicas of Dammann gratings show a slight deviation in both surface relief profile and optical performance. Experimental results demonstrated that high-fidelity replication of Dammann gratings is realized by using soft lithography with low cost and high throughput.

  14. Microphotonic parabolic light directors fabricated by two-photon lithography

    SciTech Connect

    Atwater, J. H.; Spinelli, P.; Kosten, E.; Parsons, J.; Van Lare, C.; Van de Groep, J.; Garcia de Abajo, J.; Polman, A.; Atwater, H. A.

    2011-10-10

    We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 μm high and 10 μm in diameter exhibit strong beam directivity with a beam divergence of 5.6°, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs.

  15. Quantum lithography beyond the diffraction limit via Rabi-oscillations

    NASA Astrophysics Data System (ADS)

    Liao, Zeyang; Al-Amri, Mohammad; Zubairy, M. Suhail

    2011-03-01

    We propose a quantum optical method to do the sub-wavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi-oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. This method is expected to be realizable using current technology. This work is supported by a grant from the Qatar National Research Fund (QNRF) under the NPRP project and a grant from the King Abdulaziz City for Science and Technology (KACST).

  16. A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography

    NASA Astrophysics Data System (ADS)

    Yoshizawa, Masaki; Savas, T. A.

    2002-01-01

    Patterns of 50 nm lines and spaces were demonstrated by low energy electron beam proximity lithography using 47-nm-thick poly methyl methacrylate (PMMA) and stencil masks fabricated by achromatic interference lithography (AIL). The result indicates the validity of the resolution analysis previously reported and the resolution capabilities of low energy electron beam proximity projection lithography (LEEPL) as a 50 nm node technology.

  17. Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro

    2015-09-01

    Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

  18. Capillary Force Lithography for Cardiac Tissue Engineering

    PubMed Central

    Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

    2014-01-01

    Cardiovascular disease remains the leading cause of death worldwide1. Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart’s extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale2. Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering3-5. A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling2. Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart6-9. Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)8 and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function10-14. Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively15,16. Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip and the PUA

  19. Nanoimprint lithography for functional polymer patterning

    NASA Astrophysics Data System (ADS)

    Cui, Dehu

    2011-07-01

    Organic semiconductors have generated huge interested in recent years for low-cost and flexible electronics. Current and future device applications for semiconducting polymers include light-emitting diodes, thin-film transistors, photovoltaic cells, photodetectors, lasers, and memories. The performance of conjugated polymer devices depends on two major factors: the chain conformation in polymer film and the device architecture. Highly ordered chain structure usually leads to much improved performance by enhancing interchain interaction to facilitate carrier transport. The goal of this research is to improve the performance of organic devices with the nanoimprint lithography. The work begins with the controlling of polymer chain orientation in patterned nanostructures through nanoimprint mold design and process parameter manipulation, and studying the effect of chain ordering on material properties. Then, step-and-repeat thermal nanoimprint technique for large-scale continuous manufacturing of conjugated polymer nanostructures is developed. After that, Systematic investigation of polymer chain configuration by Raman spectroscopy is carried out to understand how nanoimprint process parameters, such as mold pattern size, temperature, and polymer molecular weight, affects polymer chain configuration. The results indicate that chain orientation in nanoimprinted polymer micro- and nanostructures is highly related to the nanoimprint temperature and the dimensions of the mold structures. The ability to create nanoscale polymer micro- and nanostructures and manipulate their internal chain conformation establishes an original experimental platform that enables studying the properties of functional polymers at the micro- and nanoscale and understanding their fundamental structure-property relationships. In addition to the impact on basic research, the techniques developed in this work are important in applied research and development. Large-area conjugated polymer micro- and

  20. Progress in video immersion using Panospheric imaging

    NASA Astrophysics Data System (ADS)

    Bogner, Stephen L.; Southwell, David T.; Penzes, Steven G.; Brosinsky, Chris A.; Anderson, Ron; Hanna, Doug M.

    1998-09-01

    Having demonstrated significant technical and marketplace advantages over other modalities for video immersion, PanosphericTM Imaging (PI) continues to evolve rapidly. This paper reports on progress achieved since AeroSense 97. The first practical field deployment of the technology occurred in June-August 1997 during the NASA-CMU 'Atacama Desert Trek' activity, where the Nomad mobile robot was teleoperated via immersive PanosphericTM imagery from a distance of several thousand kilometers. Research using teleoperated vehicles at DRES has also verified the exceptional utility of the PI technology for achieving high levels of situational awareness, operator confidence, and mission effectiveness. Important performance enhancements have been achieved with the completion of the 4th Generation PI DSP-based array processor system. The system is now able to provide dynamic full video-rate generation of spatial and computational transformations, resulting in a programmable and fully interactive immersive video telepresence. A new multi- CCD camera architecture has been created to exploit the bandwidth of this processor, yielding a well-matched PI system with greatly improved resolution. While the initial commercial application for this technology is expected to be video tele- conferencing, it also appears to have excellent potential for application in the 'Immersive Cockpit' concept. Additional progress is reported in the areas of Long Wave Infrared PI Imaging, Stereo PI concepts, PI based Video-Servoing concepts, PI based Video Navigation concepts, and Foveation concepts (to merge localized high-resolution views with immersive views).

  1. Registration performance on EUV masks using high-resolution registration metrology

    NASA Astrophysics Data System (ADS)

    Steinert, Steffen; Solowan, Hans-Michael; Park, Jinback; Han, Hakseung; Beyer, Dirk; Scherübl, Thomas

    2016-10-01

    Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

  2. Challenges and mitigation strategies for resist trim etch in resist-mandrel based SAQP integration scheme

    NASA Astrophysics Data System (ADS)

    Mohanty, Nihar; Franke, Elliott; Liu, Eric; Raley, Angelique; Smith, Jeffrey; Farrell, Richard; Wang, Mingmei; Ito, Kiyohito; Das, Sanjana; Ko, Akiteru; Kumar, Kaushik; Ranjan, Alok; O'Meara, David; Nawa, Kenjiro; Scheer, Steven; DeVillers, Anton; Biolsi, Peter

    2015-03-01

    Patterning the desired narrow pitch at 10nm technology node and beyond, necessitates employment of either extreme ultra violet (EUV) lithography or multi-patterning solutions based on 193nm-immersion lithography. With enormous challenges being faced in getting EUV lithography ready for production, multi-patterning solutions that leverage the already installed base of 193nm-immersion-lithography are poised to become the industry norm for 10 and 7nm technology nodes. For patterning sub-40nm pitch line/space features, self-aligned quadruple patterning (SAQP) with resist pattern as the first mandrel shows significant cost as well as design benefit, as compared to EUV lithography or other multi-patterning techniques. One of the most critical steps in this patterning scheme is the resist mandrel definition step which involves trimming / reformation of resist profile via plasma etch for achieving appropriate pitch after the final pattern. Being the first mandrel, the requirements for the Line Edge Roughness (LER) / Line Width Roughness (LWR); critical dimension uniformity (CDU); and profile in 3-dimensions for the resist trim / reformation etch is extremely aggressive. In this paper we highlight the unique challenges associated in developing resist trim / reformation plasma etch process for SAQP integration scheme and summarize our efforts in optimizing the trim etch chemistries, process steps and plasma etch parameters for meeting the mandrel definition targets. Finally, we have shown successful patterning of 30nm pitch patterns via the resist-mandrel SAQP scheme and its implementation for Si-fin formation at 7nm node.

  3. Issues in defense training systems immersive displays

    NASA Astrophysics Data System (ADS)

    Gaylord, Philip

    2006-05-01

    Display technology for DOD immersive projector-based flight training systems are at a crossroads as CRT technology slowly disappears from the market place. From the DOD perspective, emerging technologies arrive poorly matched to satisfy training needs. The DOD represents a minority voice in the marketplace. Current issues include: Satisfying requirements for black level, brightness and contrast ratio, Establishing standard metrics for resolution, system performance and reliability, Obtaining maintainability and self-calibration in multi-channel arrays, Reducing screen cross-reflection in wrap-around immersive display arrays. Laser, DLP, and LCOS projector systems are compared for their current acceptance and problems in defense flight training systems. General requirements of visual display systems are discussed and contrasted for flight trainers for low flyers (helicopters) high flyers (tactical aircraft) in real-time immersive, networked systems. FLIR and NVG simulation techniques are described.

  4. Tele-Immersive medical educational environment.

    PubMed

    Ai, Zhuming; Dech, Fred; Silverstein, Jonathan; Rasmussen, Mary

    2002-01-01

    By combining teleconferencing, tele-presence, and Virtual Reality, the Tele-Immersive environment enables master surgeons to teach residents in remote locations. The design and implementation of a Tele-Immersive medical educational environment, Teledu, is presented in this paper. Teledu defines a set of Tele-Immersive user interfaces for medical education. In addition, an Application Programming Interface (API) is provided so that developers can easily develop different applications with different requirements in this environment. With the help of this API, programmers only need to design a plug-in to load their application specific data set. The plug-in is an object-oriented data set loader. Methods for rendering, handling, and interacting with the data set for each application can be programmed in the plug-in. The environment has a teacher mode and a student mode. The teacher and the students can interact with the same medical models, point, gesture, converse, and see each other.

  5. Innovative Technologies for Maskless Lithography and Non-Conventional Patterning

    DTIC Science & Technology

    2008-08-01

    the purpose of directly maskless lithography, and at developing functional materials for direct printing of semiconductors , dielectrics, and...printable nanomaterial semiconductors , dielectrics, and insulators were developed, and used to realize a range of directly printed active components for...configurations were investigated. The first, the electron bombardment source (EBS), features a thin semiconductor (single crystal diamond) membrane with a

  6. Novel ultra-high sensitive 'metal resist' for EUV lithography

    NASA Astrophysics Data System (ADS)

    Fujimori, Toru; Tsuchihashi, Toru; Minegishi, Shinya; Kamizono, Takashi; Itani, Toshiro

    2016-03-01

    This study describes the use of a novel ultra-high sensitive `metal resist' for use in extreme ultraviolet (EUV) lithography. Herein, the development of a metal resist has been studied for improving the sensitivity when using metal-containing non-chemically amplified resist materials; such materials are metal-containing organic-inorganic hybrid compounds and are referred to as EUVL Infrastructure Development Center, Inc. (EIDEC) standard metal EUV resist (ESMR). The novel metal resist's ultra-high sensitivity has previously been investigated for use with electron beam (EB) lithography. The first demonstration of ESMR performance was presented in SPIE2015, where it was shown to achieve 17-nm lines with 1.5 mJ/cm2: equivalent in EUV lithography tool. The sensitivity of ESMR using EUV open-flame exposure was also observed to have the same high sensitivity as that when using EB lithography tool. Therefore, ESMR has been confirmed to have the potential of being used as an ultra-high sensitive EUV resist material. The metal-containing organic-inorganic hybrid compounds and the resist formulations were investigated by measuring their sensitivity and line-width roughness (LWR) improvement. Furthermore, new processing conditions, such as new development and rinse procedures, are an extremely effective way of improving lithographic performance. In addition, the optimal dry-etching selective conditions between the metal resist and spin-on carbon (SOC) were obtained. The etched SOC pattern was successfully constructed from a stacked film of metal resist and SOC.

  7. Multilayer reflective coatings for extreme-ultraviolet lithography

    SciTech Connect

    Montcalm, C., LLNL

    1998-03-10

    Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling technology for EUV lithography. Mo/Si multilayers with reflectances of 67.5% at 13.4 nm are now routinely achieved and reflectances of 70 2% at 11.4 nm were obtained with MO/Be multilayers. High reflectance is achieved with careful control of substrate quality, layer thicknesses, multilayer materials, interface quality, and surface termination. Reflectance and film stress were found to be stable relative to the requirements for application to EUV lithography. The run-to-run reproducibility of the reflectance peak position was characterized to be better than 0.2%, providing the required wavelength matching among the seven multilayer-coated mirrors used in the present lithography system design. Uniformity of coating was improved to better than 0.5% across 150 mm diameter substrates. These improvements in EUV multilayer mirror technology will enable us to meet the stringent specifications for coating the large optical substrates for our next-generation EUV lithography system.

  8. Shadow overlap ion-beam lithography for nanoarchitectures.

    PubMed

    Choi, Yeonho; Hong, Soongweon; Lee, Luke P

    2009-11-01

    Precisely constructed nanoscale devices and nanoarchitectures with high spatial resolution are critically needed for applications in high-speed electronics, high-density memory, efficient solar cells, optoelectronics, plasmonics, optical antennas, chemical sensors, biological sensors, and nanospectroscopic imaging. Current methods of classical optical lithography are limited by the diffraction effect of light for nanolithography, and the state of art of e-beam or focused ion beam lithography limit the throughput and further reduction less than few nanometers for large-area batch fabrication. However, these limits can be surpassed surprisingly by utilizing the overlap of two shadow images. Here we present shadow overlap of ion-beam lithography (SOIL), which can combine the advantages of parallel processing, tunable capability of geometries, cost-effective method, and high spatial resolution nanofabrication technique. The SOIL method relies on the overlap of shadows created by the directional metal deposition and etching angles on prepatterned structures. Consequently, highly tunable patterns can be obtained. As examples, unprecedented nanoarchitectures for optical antennas are demonstrated by SOIL. We expect that SOIL can have a significant impact not only on nanoscale devices, but also large-scale (i.e., micro and macro) three-dimensional innovative lithography.

  9. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhurl, Avijit K.

    2000-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  10. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhuri, Avijit

    2001-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  11. Condenser for extreme-UV lithography with discharge source

    DOEpatents

    Sweatt, William C.; Kubiak, Glenn D.

    2001-01-01

    Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

  12. Three-Dimensional Nano-Lithography for Emerging Technologies

    DTIC Science & Technology

    2005-09-27

    SUBJECT TERMS Grayscale lithography, micro - and nano -fabrication, 3D micro ...meso-optics for optical system integration, and the burgeoning field of micro -electro-mechanical systems (MEMS), provide drive in the micro - and nano ...scientific literature, and presentations at conferences devoted to micro - and nano -fabrication and micro - optics. More importantly, we developed technology

  13. Beyond EUV lithography: a comparative study of efficient photoresists' performance

    PubMed Central

    Mojarad, Nassir; Gobrecht, Jens; Ekinci, Yasin

    2015-01-01

    Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra. PMID:25783209

  14. Patterning of membrane masks for projection e-beam lithography

    NASA Astrophysics Data System (ADS)

    Fetter, Linus A.; Biddick, Christopher J.; Blakey, Myrtle I.; Liddle, James A.; Peabody, Milton L., Jr.; Novembre, Anthony E.; Tennant, Donald M.

    1996-12-01

    A process for high-resolution patterning of the membrane- type masks used in the SCALPEL (SCattering with Angular Limitation in Projection Electron-beam Lithography) lithography system is described. SCALPEL is a 4X projection electron beam lithography tool with the potential to extend commercial lithographic capability well into the deep sub-micron range: the recently-completed SCALPEL proof- of-concept (SPOC) system has printed 0.08 micrometers lines in thick resist on Si. The details of the patterning process we currently employ and metrology results from the first series of masks are presented here. The SPOC mask blank consists of a segmented W-coated SiN (Si-rich) membrane, fabricated on a 4' Si wafer. The blank is patterned with 45 different test chips using a vector-scanned e-beam lithography tool. Metrology is performed on completed masks, and results from measurements of line-edge roughness, CD linearity, and pattern uniformity are presented. We examine the need for proximity effect correction of the pattern data, and compare the effect of correction on pattern data file size for a variety of mask technologies.

  15. Instrumentation for Microfabrication with Deep X-ray Lithography

    NASA Astrophysics Data System (ADS)

    Pantenburg, F. J.

    2007-01-01

    Deep X-ray lithography for microfabrication is performed at least at ten synchrotron radiation centers worldwide. The characteristic energies of these sources range from 1.4 keV up to 8 keV, covering mask making capabilities, deep X-ray lithography up to ultra deep x-ray lithography of several millimeters resist thickness. Limitations in deep X-ray lithography arise from hard X-rays in the SR-spectrum leading to adhesion losses of resist lines after the developing process, as well as heat load due to very high fluxes leading to thermal expansion of mask and resist during exposure and therefore to microstructure distortion. Considering the installations at ANKA as an example, the advantages of mirrors and central beam stops for DXRL are presented. Future research work will concentrate on feature sizes much below 1 μm, while the commercialization of DXRL goes in the direction of massive automation, including parallel exposures of several samples in a very wide SR-fan, developing and inspection.

  16. Nanoscale molecular-switch devices fabricated by imprint lithography

    NASA Astrophysics Data System (ADS)

    Chen, Yong; Ohlberg, Douglas A. A.; Li, Xuema; Stewart, Duncan R.; Stanley Williams, R.; Jeppesen, Jan O.; Nielsen, Kent A.; Stoddart, J. Fraser; Olynick, Deirdre L.; Anderson, Erik

    2003-03-01

    Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography. Bistable current-voltage characteristics with high on-off ratios and reversible switching properties were observed. Such devices may function as basic elements for future ultradense electronic circuitry.

  17. Biologically inspired omniphobic surfaces by reverse imprint lithography.

    PubMed

    Hensel, René; Finn, Andreas; Helbig, Ralf; Braun, Hans-Georg; Neinhuis, Christoph; Fischer, Wolf-Joachim; Werner, Carsten

    2014-04-02

    Springtail skin morphology is translated into robust omniphobic polymer membranes by reverse imprint lithography. The combination of overhanging cross-sections and their arrangement in a self-supporting comblike pattern are crucial for mechanically stable coatings that can be even applied to curved surfaces.

  18. EUV lithography: NXE platform performance overview

    NASA Astrophysics Data System (ADS)

    Peeters, Rudy; Lok, Sjoerd; Mallman, Joerg; van Noordenburg, Martijn; Harned, Noreen; Kuerz, Peter; Lowisch, Martin; van Setten, Eelco; Schiffelers, Guido; Pirati, Alberto; Stoeldraijer, Judon; Brandt, David; Farrar, Nigel; Fomenkov, Igor; Boom, Herman; Meiling, Hans; Kool, Ron

    2014-04-01

    The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML's third generation EUV system and has an NA of 0.33. It succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience. Good overlay and imaging performance has been shown on the NXE:3300B system in line with 22nm device requirements. Full wafer CDU performance of <1.5nm for 22nm dense and iso lines at a dose of ~16mJ/cm2 has been achieved. Matched machine overlay (NXE to immersion) of around 3.5nm has been demonstrated on multiple systems. Dense lines have been exposed down to 13nm half pitch, and contact holes down to 17nm half pitch. 10nm node Metal-1 layers have been exposed with a DOF of 120nm, and using single spacer assisted double patterning flow a resolution of 9nm has been achieved. Source power is the major challenge to overcome in order to achieve cost-effectiveness in EUV and enable introduction into High Volume Manufacturing. With the development of the MOPA+prepulse operation of the source, steps in power have been made, and with automated control the sources have been prepared to be used in a preproduction fab environment. Flexible pupil formation is under development for the NXE:3300B which will extend the usage of the system in HVM, and the resolution for the full system performance can be extended to 16nm. Further improvements in defectivity performance have been made, while in parallel full-scale pellicles are being developed. In this paper we will discuss the current NXE:3300B performance, its future enhancements and the recent progress in EUV source performance.

  19. Water immersion in neonatal bereavement photography.

    PubMed

    Duffey, Heather

    2014-01-01

    Water immersion in neonatal bereavement photography is a new technique intended to enhance the quality of the photographs provided to families following their loss. Water immersion appears to be most helpful following a second trimester fetal demise. This technique can be used by nurses, professional photographers and others in addition to more traditional neonatal bereavement photography. It does not require special skills or equipment and can be implemented in virtually any perinatal setting. The enhanced quality of photographs produced with this method can potentially provide a source of comfort to grieving families.

  20. Protein assay structured on paper by using lithography

    NASA Astrophysics Data System (ADS)

    Wilhelm, E.; Nargang, T. M.; Al Bitar, W.; Waterkotte, B.; Rapp, B. E.

    2015-03-01

    There are two main challenges in producing a robust, paper-based analytical device. The first one is to create a hydrophobic barrier which unlike the commonly used wax barriers does not break if the paper is bent. The second one is the creation of the (bio-)specific sensing layer. For this proteins have to be immobilized without diminishing their activity. We solve both problems using light-based fabrication methods that enable fast, efficient manufacturing of paper-based analytical devices. The first technique relies on silanization by which we create a flexible hydrophobic barrier made of dimethoxydimethylsilane. The second technique demonstrated within this paper uses photobleaching to immobilize proteins by means of maskless projection lithography. Both techniques have been tested on a classical lithography setup using printed toner masks and on a lithography system for maskless lithography. Using these setups we could demonstrate that the proposed manufacturing techniques can be carried out at low costs. The resolution of the paper-based analytical devices obtained with static masks was lower due to the lower mask resolution. Better results were obtained using advanced lithography equipment. By doing so we demonstrated, that our technique enables fabrication of effective hydrophobic boundary layers with a thickness of only 342 μm. Furthermore we showed that flourescine-5-biotin can be immobilized on the non-structured paper and be employed for the detection of streptavidinalkaline phosphatase. By carrying out this assay on a paper-based analytical device which had been structured using the silanization technique we proofed biological compatibility of the suggested patterning technique.

  1. Immersion in mediated environments: the role of personality traits.

    PubMed

    Weibel, David; Wissmath, Bartholomäus; Mast, Fred W

    2010-06-01

    Previous research studies in the context of presence point out the importance of personality factors. Surprisingly, the relation between immersion and the Big Five personality factors has not yet been examined. Hence, we assessed these traits in an online survey (N = 220) and relate them to immersive tendency, a disposition that determines whether someone is receptive to immersive experiences during media exposure. Using structural equation modeling, we can show that openness to experience, neuroticism, and extraversion are positively related to immersive tendency. The immersive tendency subscale absorption is related to openness to experience, whereas the immersive tendency subscale emotional involvement is related to openness, extraversion, and neuroticism.

  2. Using Immersive Virtual Environments for Certification

    NASA Technical Reports Server (NTRS)

    Lutz, R.; Cruz-Neira, C.

    1998-01-01

    Immersive virtual environments (VEs) technology has matured to the point where it can be utilized as a scientific and engineering problem solving tool. In particular, VEs are starting to be used to design and evaluate safety-critical systems that involve human operators, such as flight and driving simulators, complex machinery training, and emergency rescue strategies.

  3. ICP Source with Immersed Ferromagnetic Inductor

    NASA Astrophysics Data System (ADS)

    Godyak, Valery

    2013-09-01

    Inductively coupled plasma (ICP) sources have found a wide range of applications in various areas of plasma science and technology. Among different ICP topology, ICPs with immersed inductors have benefits (compared to ICPs with helical side or flat top inductors) of better coupling and electromagnetic (EM) field self-screening by the plasma surrounding the inductor. This allows for EM-free otter plasma boundary, thus making an ICP chamber entirely of metal or glass, with no EM radiation outside the plasma. It's been long known that ICP enhanced with ferromagnetic core immersed inductor is applicable in rf light sources and has demonstrated good performance. In this presentation we report a detailed experimental study of the electrical and plasma characteristics of compact ICPs with immersed ferromagnetic inductors in argon and xenon gas. The extremely high plasma transfer efficiency of this plasma source has been demonstrated in a wide range of gas pressure and rf power. A compact plasma cathode built with ICP having an immersed ferromagnetic inductor, and operating at 70-200 W has shown high power transfer efficiency of 97%, and electron emission efficiency of 25 mA/W. These data are superior compared to those demonstrated for other plasma cathodes.

  4. 46 CFR 199.273 - Immersion suits.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... appropriate size for each person on board. (b) If watch stations, work stations, or work sites are remote from... suits stowed at the watch stations, work stations, or work sites to equal the number of persons normally on watch in, or assigned to, those locations at any time. (c) The immersion suits required...

  5. Simulation Exploration through Immersive Parallel Planes: Preprint

    SciTech Connect

    Brunhart-Lupo, Nicholas; Bush, Brian W.; Gruchalla, Kenny; Smith, Steve

    2016-03-01

    We present a visualization-driven simulation system that tightly couples systems dynamics simulations with an immersive virtual environment to allow analysts to rapidly develop and test hypotheses in a high-dimensional parameter space. To accomplish this, we generalize the two-dimensional parallel-coordinates statistical graphic as an immersive 'parallel-planes' visualization for multivariate time series emitted by simulations running in parallel with the visualization. In contrast to traditional parallel coordinate's mapping the multivariate dimensions onto coordinate axes represented by a series of parallel lines, we map pairs of the multivariate dimensions onto a series of parallel rectangles. As in the case of parallel coordinates, each individual observation in the dataset is mapped to a polyline whose vertices coincide with its coordinate values. Regions of the rectangles can be 'brushed' to highlight and select observations of interest: a 'slider' control allows the user to filter the observations by their time coordinate. In an immersive virtual environment, users interact with the parallel planes using a joystick that can select regions on the planes, manipulate selection, and filter time. The brushing and selection actions are used to both explore existing data as well as to launch additional simulations corresponding to the visually selected portions of the input parameter space. As soon as the new simulations complete, their resulting observations are displayed in the virtual environment. This tight feedback loop between simulation and immersive analytics accelerates users' realization of insights about the simulation and its output.

  6. Digital Immersive Virtual Environments and Instructional Computing

    ERIC Educational Resources Information Center

    Blascovich, Jim; Beall, Andrew C.

    2010-01-01

    This article reviews theory and research relevant to the development of digital immersive virtual environment-based instructional computing systems. The review is organized within the context of a multidimensional model of social influence and interaction within virtual environments that models the interaction of four theoretical factors: theory…

  7. How One Class Experienced Cultural Immersion

    ERIC Educational Resources Information Center

    Allery, Virginia

    2009-01-01

    Twenty-one teacher candidates and faculty from Turtle Mountain Community College (TMCC, Belcourt, North Dakota) and Cikana Cankdeska Community College (CCCC, Fort Totten, North Dakota) traveled by train from North Dakota to Minneapolis, Minnesota, for an immersion experience as part of their Human Relations and Multicultural Education. The group…

  8. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  9. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  10. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  11. Architectures for Developing Multiuser, Immersive Learning Scenarios

    ERIC Educational Resources Information Center

    Nadolski, Rob J.; Hummel, Hans G. K.; Slootmaker, Aad; van der Vegt, Wim

    2012-01-01

    Multiuser immersive learning scenarios hold strong potential for lifelong learning as they can support the acquisition of higher order skills in an effective, efficient, and attractive way. Existing virtual worlds, game development platforms, and game engines only partly cater for the proliferation of such learning scenarios as they are often…

  12. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  13. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  14. Cross-Cultural Nonverbal Cue Immersive Training

    DTIC Science & Technology

    2008-12-01

    1 CROSS-CULTURAL NONVERBAL CUE IMMERSIVE TRAINING Shatha N. Samman*, Michael Moshell + , Bryan Clark, Chantel Brathwaite + , and Allison Abbe...their meaning. 1.2 Nonverbal Cues Categorized by Function In one commonly accepted taxonomic approach, Ekman and Friesen (1969) classified...nonverbal cues (Ekman & Friesen , 1969). Emblems occur mainly when verbal communication is inhibited by external factors (e.g., noise, distance

  15. Foreign Language Immersion Programs. ERIC Digest.

    ERIC Educational Resources Information Center

    Met, Myriam

    Immersion is defined as a method of foreign language instruction in which the regular school curriculum is taught through the medium of the language. The foreign language is the vehicle for content instruction; it is not the subject of instruction. Different questions pertaining to the following subjects are answered: (1) long-range goals of a…

  16. CLIL in Queensland: The Evolution of "Immersion"

    ERIC Educational Resources Information Center

    Smala, Simone

    2015-01-01

    Queensland second language immersion programs have been in existence for three decades, and are part of a growing number of additive bilingual education programs in Australia. Most prominently, many new Content and Language Integrated Learning (CLIL) programs have been established particularly in Victoria over the past few years. This focus on…

  17. Using Drama in the French Immersion Program.

    ERIC Educational Resources Information Center

    Shacker, Deborah L.; And Others

    1993-01-01

    Analyzes the nature of the oral language interactions of French immersion students involved in a group drama about the early settlers. Finds that four language functions (informative, directive, expressive, and imaginative) were characteristic of children's interactions during group drama. Finds relationships between type of session and the…

  18. Fabricating Blazed Diffraction Gratings by X-Ray Lithography

    NASA Technical Reports Server (NTRS)

    Mouroulis, Pantazis; Hartley, Frank; Wilson, Daniel

    2004-01-01

    Gray-scale x-ray lithography is undergoing development as a technique for fabricating blazed diffraction gratings. As such, gray-scale x-ray lithography now complements such other grating-fabrication techniques as mechanical ruling, holography, ion etching, laser ablation, laser writing, and electron-beam lithography. Each of these techniques offers advantages and disadvantages for implementing specific grating designs; no single one of these techniques can satisfy the design requirements for all applications. Gray-scale x-ray lithography is expected to be advantageous for making gratings on steeper substrates than those that can be made by electron-beam lithography. This technique is not limited to sawtooth groove profiles and flat substrates: various groove profiles can be generated on arbitrarily shaped (including highly curved) substrates with the same ease as sawtooth profiles can be generated on flat substrates. Moreover, the gratings fabricated by this technique can be made free of ghosts (spurious diffraction components attributable to small spurious periodicities in the locations of grooves). The first step in gray-scale x-ray lithography is to conformally coat a substrate with a suitable photoresist. An x-ray mask (see Figure 1) is generated, placed between the substrate and a source of collimated x-rays, and scanned over the substrate so as to create a spatial modulation in the exposure of the photoresist. Development of the exposed photoresist results in a surface corrugation that corresponds to the spatial modulation and that defines the grating surface. The grating pattern is generated by scanning an appropriately shaped x-ray area mask along the substrate. The mask example of Figure 1 would generate a blazed grating profile when scanned in the perpendicular direction at constant speed, assuming the photoresist responds linearly to incident radiation. If the resist response is nonlinear, then the mask shape can be modified to account for the

  19. Immersion mode ice nucleation measurements with the new Portable Immersion Mode Cooling chAmber (PIMCA)

    NASA Astrophysics Data System (ADS)

    Kohn, Monika; Lohmann, Ulrike; Welti, André; Kanji, Zamin A.

    2016-05-01

    The new Portable Immersion Mode Cooling chAmber (PIMCA) has been developed for online immersion freezing of single-immersed aerosol particles. PIMCA is a vertical extension of the established Portable Ice Nucleation Chamber (PINC). PIMCA immerses aerosol particles into cloud droplets before they enter PINC. Immersion freezing experiments on cloud droplets with a radius of 5-7 μm at a prescribed supercooled temperature (T) and water saturation can be conducted, while other ice nucleation mechanisms (deposition, condensation, and contact mode) are excluded. Validation experiments on reference aerosol (kaolinite, ammonium sulfate, and ammonium nitrate) showed good agreement with theory and literature. The PIMCA-PINC setup was tested in the field during the Zurich AMBient Immersion freezing Study (ZAMBIS) in spring 2014 in Zurich, Switzerland. Significant concentrations of submicron ambient aerosol triggering immersion freezing at T > 236 K were rare. The mean frozen cloud droplet number concentration was estimated to be 7.22·105 L-1 for T < 238 K and determined from the measured frozen fraction and cloud condensation nuclei (CCN) concentrations predicted for the site at a typical supersaturation of SS = 0.3%. This value should be considered as an upper limit of cloud droplet freezing via immersion and homogeneous freezing processes. The predicted ice nucleating particle (INP) concentration based on measured total aerosol larger than 0.5 μm and the parameterization by DeMott et al. (2010) at T = 238 K is INPD10=54 ± 39 L-1. This is a lower limit as supermicron particles were not sampled with PIMCA-PINC during ZAMBIS.

  20. 7 CFR 305.22 - Hot water immersion treatment schedules.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 5 2010-01-01 2010-01-01 false Hot water immersion treatment schedules. 305.22... Hot water immersion treatment schedules. (a) T102-d. (1) Fruit must be grown and treated in Hawaii. (2) Fruit must be submerged at least 4 inches below the water's surface in a hot water immersion...

  1. English Immersion and Educational Inequality in South Korea

    ERIC Educational Resources Information Center

    Jeon, Mihyon

    2012-01-01

    This article explores what immersion English education means in South Korea (henceforth Korea) and examines various related educational practices. The proposal for English immersion from the Presidential Transition Committee of the Lee administration in early 2008 has highlighted immersion education in Korea. Ironically, since the committee's…

  2. Electrode immersion depth determination and control in electroslag remelting furnace

    DOEpatents

    Melgaard, David K.; Beaman, Joseph J.; Shelmidine, Gregory J.

    2007-02-20

    An apparatus and method for controlling an electroslag remelting furnace comprising adjusting electrode drive speed by an amount proportional to a difference between a metric of electrode immersion and a set point, monitoring impedance or voltage, and calculating the metric of electrode immersion depth based upon a predetermined characterization of electrode immersion depth as a function of impedance or voltage.

  3. Nodal line-scanning method for maskless optical lithography.

    PubMed

    Johnson, Kenneth C

    2014-12-01

    Maskless optical lithography can improve the economics and performance of multi-patterning by eliminating photomasks and by simplifying the lithography exposure technology. It could also potentially eliminate the need for multi-patterning by enabling dual-wavelength, nonlinear optical recording methods. High-resolution, maskless patterning can be achieved with a scanned-spot-array system in which modulated, diffraction-limited focus spots write the exposure pattern. Each spot has a central zero-intensity interference null along a line parallel to the scan direction for printing sub-resolution line patterns. High throughput can be achieved at the comparatively low repetition rate of excimer lasers (e.g., 6 kHz). The low repetition rate simplifies the optical modulation technology, enabling the use of supplemental modulation controls including dynamic gray-level and beam-centration controls for resolution enhancement.

  4. Particulate templates and ordered liquid bridge networks in evaporative lithography.

    PubMed

    Vakarelski, Ivan U; Kwek, Jin W; Tang, Xiaosong; O'Shea, Sean J; Chan, Derek Y C

    2009-12-01

    We investigate the properties of latex particle templates required to optimize the development of ordered liquid bridge networks in evaporative lithography. These networks are key precursors in the assembly of solutions of conducting nanoparticles into large, optically transparent, and conducting microwire networks on substrates (Vakarelski, I. U.; Chan, D. Y. C.; Nonoguchi, T.; Shinto, H.; Higashitani, K. Phys. Rev. Lett., 2009, 102, 058303). An appropriate combination of heat treatment and oxygen plasma etching of a close-packed latex particle monolayer is shown to create open-spaced particle templates which facilitates the formation of ordered fully connected liquid bridge networks that are critical to the formation of ordered microwire networks. Similar results can also be achieved if non-close-packed latex particle templates with square or honeycomb geometries are used. The present results have important implications for the development of the particulate templates to control the morphology of functional microwire networks by evaporative lithography.

  5. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography.

    PubMed

    Tiddia, Mariavitalia; Mula, Guido; Sechi, Elisa; Vacca, Annalisa; Cara, Eleonora; De Leo, Natascia; Fretto, Matteo; Boarino, Luca

    2016-12-01

    In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown.

  6. Combined capillary force and step and flash lithography

    NASA Astrophysics Data System (ADS)

    Mele, Elisa; Di Benedetto, Francesca; Persano, Luana; Pisignano, Dario; Cingolani, Roberto

    2005-04-01

    The combination of a key element of soft lithography, namely the elastomeric stamp, with the operation principle of step and flash imprint lithography results in a moulding procedure allowing high throughput and remarkable operational simplicity. 100 nm scale dense features can be fabricated via in situ polymerization of a polyurethane fluid, simultaneous to the capillary penetration into the recessed regions of high-resolution elastomeric elements. Excellent pattern definition has been obtained for features down to 200 nm, with aspect ratio of around unity over areas of the order of cm2. The physical principles of the fluidic motion within the sub-µm channels are also discussed, to estimate the maximum aspect ratio achievable before the complete curing of the employed photopolymer.

  7. Rapid prototyping of microstructures by soft lithography for biotechnology.

    PubMed

    Wolfe, Daniel B; Qin, Dong; Whitesides, George M

    2010-01-01

    This chapter describes the methods and specific procedures used to fabricate microstructures by soft lithography. These techniques are useful for the prototyping of devices useful for applications in biotechnology. Fabrication by soft lithography does not require specialized or expensive equipment; the materials and facilities necessary are found commonly in biological and chemical laboratories in both academia and industry. The combination of the fact that the materials are low-cost and that the time from design to prototype device can be short (< 24 h) makes it possible to use and to screen rapidly devices that also can be disposable. Here we describe the procedures for fabricating microstructures with lateral dimensions as small as 1 mum. These types of microstructures are useful for microfluidic devices, cell-based assays, and bioengineered surfaces.

  8. Metallic nanodot arrays by stencil lithography for plasmonic biosensing applications.

    PubMed

    Vazquez-Mena, Oscar; Sannomiya, Takumi; Villanueva, Luis G; Voros, Janos; Brugger, Juergen

    2011-02-22

    The fabrication of gold nanodots by stencil lithography and its application for optical biosensing based on localized surface plasmon resonance are presented. Arrays of 50-200 nm wide nanodots with different spacing of 50-300 nm are fabricated without any resist, etching, or lift-off process. The dimensions and morphology of the nanodots were characterized by scanning electron and atomic force microscopy. The fabricated nanodots showed localized surface plasmon resonance in their extinction spectra in the visible range. The resonance wavelength depends on the periodicity and dimensions of the nanodots. Bulk refractive index measurements and model biosensing of streptavidin were successfully performed based on the plasmon resonance shift induced by local refractive index change when biomolecules are adsorbed on the nanodots. These results demonstrate the potential of stencil lithography for the realization of plasmon-based biosensing devices.

  9. Source development for extreme ultraviolet lithography and water window imaging

    NASA Astrophysics Data System (ADS)

    O'Sullivan, G.; Dunne, P.; Kilbane, D.; Liu, L.; Lokasani, R.; Long, E.; Li, B. W.; McCormack, T.; O'Reilly, F.; Shiel, J.; Sokell, E.; Suzuki, C.; Wu, T.; Higashiguchi, T.

    2017-03-01

    Sources based on laser produced plasmas of tin (Sn) are currently being developed for extreme ultraviolet lithography for semiconductor fabrication. Since they operate at short wavelength (13.5 nm) they are capable of producing features with critical dimensions in the 10 nm range. Already next generation lithography sources operating at an even lower wavelength of around 6.7-6.8 nm have been proposed and research is ongoing on their feasibility for both large scale manufacturing and `at wavelength' metrology. The high resolution afforded by such short wavelengths is also of use for applications such as surface patterning and microscopy and the results of recent experiments to identify sources for operation in the `water window' (2.34-4.2 nm), where carbon absorbs strongly but water does not are summarized.

  10. Nanostructure patterning on flexible substrates using electron beam lithography

    NASA Astrophysics Data System (ADS)

    Nagaraj, K. S.; Sangeeth, K.; Hegde, G. M.

    2014-06-01

    Patterning nanostructures on flexible substrates plays a key role in the emerging flexible electronics technology. The flexible electronic devices are inexpensive and can be conformed to any shape. The potential applications for such devices are sensors, displays, solar cells, RFID, high-density biochips, optoelectronics etc. E-beam lithography is established as a powerful tool for nanoscale fabrication, but its applicability on insulating flexible substrates is often limited because of surface charging effects. This paper presents the fabrication of nanostructures on insulating flexible substrates using low energy E-beam lithography along with metallic layers for charge dissipation. Nano Structures are patterned on different substrates of materials such as acetate and PET foils. The fabrication process parameters such as the proximity gap of exposure, the exposure dosage and developing conditions have been optimized for each substrate.

  11. Maskless, parallel patterning with zone-plate array lithography

    SciTech Connect

    Carter, D. J. D.; Gil, Dario; Menon, Rajesh; Mondol, Mark K.; Smith, Henry I.; Anderson, Erik H.

    1999-11-01

    Zone-plate array lithography (ZPAL) is a maskless lithography scheme that uses an array of shuttered zone plates to print arbitrary patterns on a substrate. An experimental ultraviolet ZPAL system has been constructed and used to simultaneously expose nine different patterns with a 3x3 array of zone plates in a quasidot-matrix fashion. We present exposed patterns, describe the system design and construction, and discuss issues essential to a functional ZPAL system. We also discuss another ZPAL system which operates with 4.5 nm x radiation from a point source. We present simulations which show that, with our existing x-ray zone plates and this system, we should be able to achieve 55 nm resolution. (c) 1999 American Vacuum Society.

  12. Option of resolution enhancement technology in advanced lithography

    NASA Astrophysics Data System (ADS)

    Li, Yanqui; Zhou, Yuan

    2007-12-01

    Hyper-numerical aperture ArF scanner has being designed to meet the needs of 45nm node. Resolution enhancement technology, such as phase shift mask, off-axis illumination, and innovation processing technology must be employed in hyper-numerical aperture ArF lithography. However the cross talk of phase shift mask, off axis illumination, polarization effect, and resist stack impacts lithography performance significantly. Option of resolution enhancement technology is presented in conjunction with optimal dual-layers bottom anti-refactive coating and polarized illumination by our program and Prolith 9.0. Multi options of resolution enhancement technology are obtained to maintain a small CD, good CD uniformity (CDU), reasonable process window (PW) and fidelity of resist profile.

  13. Coupling-aware mixed dummy metal insertion for lithography

    NASA Astrophysics Data System (ADS)

    Deng, Liang; Wong, Martin D. F.; Chao, Kai-Yuan; Xiang, Hua

    2007-03-01

    As integrated circuits manufacturing technology is advancing into 65nm and 45nm nodes, extensive resolution enhancement techniques (RET) are needed to correctly manufacture a chip design. The widely used RET called offaxis illumination (OAI) introduces forbidden pitches which lead to very complex design rules. It has been observed that imposing uniformity on layout designs can substantially improve printability under OAI. In this paper, two types of assist features for the metal layer are proposed to improve the uniformity, printable assist feature and segmented printable assist feature. They bring different costs on performance and manufacturing. Coupling and lithography costs from these assist features are discussed. Optimal insertion algorithm is proposed to use both types of dummy metals, considering trade-offs between coupling and lithography costs.

  14. Enhancement of height resolution in direct laser lithography.

    PubMed

    Rhee, Hyug-Gyo; Lee, Yun-Woo

    2012-01-02

    To address the requirements of multi-level semiconductors, we propose a new technique for overcoming the height limitation of direct laser lithography. In the proposed system, an original source beam is fed into an interference generator that divides the input beam by 50: 50 into two output beams. After going through an imaging lens, these two beams make two focusing spots, which are slightly separated in the axial direction. In the overlapped region, these two spots generate a small interferogram that shortens the depth of focus. By using this phenomenon, we are able to overcome the height limitation of direct laser lithography. The governing equations are also derived in this manuscript by using the Gaussian beam model.

  15. Bioimprinting strategies: from soft lithography to biomimetic sensors and beyond.

    PubMed

    Mujahid, Adnan; Iqbal, Naseer; Afzal, Adeel

    2013-12-01

    Imprinting is a straightforward, yet a reliable technique to develop dynamic artificial recognition materials-so called as synthetic antibodies. Surface imprinting strategies such as soft lithography allow biological stereotyping of polymers and sol-gel phases to prepare extremely selective receptor layers, which can be combined with suitable transducer systems to develop high performance biomimetic sensors. This article presents an overview of the remarkable technical advancements in the field of surface bioimprinting with particular emphasis on surface imprinted bioanalyte detection systems and their applications in rapid bioanalysis and biotechnology. Herein, we discuss a variety of surface imprinting strategies including soft lithography, template immobilization, grafting, emulsion polymerization, and others along with their biomimetic sensor applications, merits and demerits. The pioneering research works on surface patterned biosensors are described with selected examples of detecting biological agents ranging from small biomolecules and proteins to living cells and microorganisms.

  16. The Flostation - an Immersive Cyberspace System

    NASA Technical Reports Server (NTRS)

    Park, Brian

    2006-01-01

    A flostation is a computer-controlled apparatus that, along with one or more computer(s) and other computer-controlled equipment, is part of an immersive cyberspace system. The system is said to be immersive in two senses of the word: (1) It supports the body in a modified form neutral posture experienced in zero gravity and (2) it is equipped with computer-controlled display equipment that helps to give the occupant of the chair a feeling of immersion in an environment that the system is designed to simulate. Neutral immersion was conceived during the Gemini program as a means of training astronauts for working in a zerogravity environment. Current derivatives include neutral-buoyancy tanks and the KC-135 airplane, each of which mimics the effects of zero gravity. While these have performed well in simulating the shorter-duration flights typical of the space program to date, a training device that can take astronauts to the next level will be needed for simulating longer-duration flights such as that of the International Space Station. The flostation is expected to satisfy this need. The flostation could also be adapted and replicated for use in commercial ventures ranging from home entertainment to medical treatment. The use of neutral immersion in the flostation enables the occupant to recline in an optimal posture of rest and meditation. This posture, combines savasana (known to practitioners of yoga) and a modified form of the neutral posture assumed by astronauts in outer space. As the occupant relaxes, awareness of the physical body is reduced. The neutral body posture, which can be maintained for hours without discomfort, is extended to the eyes, ears, and hands. The occupant can be surrounded with a full-field-of-view visual display and nearphone sound, and can be stimulated with full-body vibration and motion cueing. Once fully immersed, the occupant can use neutral hand controllers (that is, hand-posture sensors) to control various aspects of the

  17. Immersive 3D geovisualisation in higher education

    NASA Astrophysics Data System (ADS)

    Philips, Andrea; Walz, Ariane; Bergner, Andreas; Graeff, Thomas; Heistermann, Maik; Kienzler, Sarah; Korup, Oliver; Lipp, Torsten; Schwanghart, Wolfgang; Zeilinger, Gerold

    2014-05-01

    Through geovisualisation we explore spatial data, we analyse it towards a specific questions, we synthesise results, and we present and communicate them to a specific audience (MacEachren & Kraak 1997). After centuries of paper maps, the means to represent and visualise our physical environment and its abstract qualities have changed dramatically since the 1990s - and accordingly the methods how to use geovisualisation in teaching. Whereas some people might still consider the traditional classroom as ideal setting for teaching and learning geographic relationships and its mapping, we used a 3D CAVE (computer-animated virtual environment) as environment for a problem-oriented learning project called "GEOSimulator". Focussing on this project, we empirically investigated, if such a technological advance like the CAVE make 3D visualisation, including 3D geovisualisation, not only an important tool for businesses (Abulrub et al. 2012) and for the public (Wissen et al. 2008), but also for educational purposes, for which it had hardly been used yet. The 3D CAVE is a three-sided visualisation platform, that allows for immersive and stereoscopic visualisation of observed and simulated spatial data. We examined the benefits of immersive 3D visualisation for geographic research and education and synthesized three fundamental technology-based visual aspects: First, the conception and comprehension of space and location does not need to be generated, but is instantaneously and intuitively present through stereoscopy. Second, optical immersion into virtual reality strengthens this spatial perception which is in particular important for complex 3D geometries. And third, a significant benefit is interactivity, which is enhanced through immersion and allows for multi-discursive and dynamic data exploration and knowledge transfer. Based on our problem-oriented learning project, which concentrates on a case study on flood risk management at the Wilde Weisseritz in Germany, a river

  18. Maskless micro-ion-beam reduction lithography system

    DOEpatents

    Leung, Ka-Ngo; Barletta, William A.; Patterson, David O.; Gough, Richard A.

    2005-05-03

    A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

  19. Design and fabrication of diverse metamaterial structures by holographic lithography.

    PubMed

    Yang, Yi; Li, Qiuze; Wang, Guo Ping

    2008-07-21

    We demonstrate a holographic lithography for the fabrication of diverse metamaterial structures by using an optical prism. Cylindrical nanoshells, U-shaped resonator arrays, and double-split ring arrays are obtained experimentally by real time modulating the phase relation of the interference beams. This easy-to-use method may provide a roadway for the design and fabrication of future metamaterials requiring diverse structures for effectively manipulating electromagnetic properties at optical frequencies.

  20. 3D nanostructures fabricated by advanced stencil lithography

    NASA Astrophysics Data System (ADS)

    Yesilkoy, F.; Flauraud, V.; Rüegg, M.; Kim, B. J.; Brugger, J.

    2016-02-01

    This letter reports on a novel fabrication method for 3D metal nanostructures using high-throughput nanostencil lithography. Aperture clogging, which occurs on the stencil membranes during physical vapor deposition, is leveraged to create complex topographies on the nanoscale. The precision of the 3D nanofabrication method is studied in terms of geometric parameters and material types. The versatility of the technique is demonstrated by various symmetric and chiral patterns made of Al and Au.

  1. 3D nanostructures fabricated by advanced stencil lithography.

    PubMed

    Yesilkoy, F; Flauraud, V; Rüegg, M; Kim, B J; Brugger, J

    2016-03-07

    This letter reports on a novel fabrication method for 3D metal nanostructures using high-throughput nanostencil lithography. Aperture clogging, which occurs on the stencil membranes during physical vapor deposition, is leveraged to create complex topographies on the nanoscale. The precision of the 3D nanofabrication method is studied in terms of geometric parameters and material types. The versatility of the technique is demonstrated by various symmetric and chiral patterns made of Al and Au.

  2. Etched-multilayer phase shifting masks for EUV lithography

    DOEpatents

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  3. 450mm wafer patterning with jet and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

    2013-09-01

    The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

  4. Preparation of ring resonator based on PDMS using laser lithography

    NASA Astrophysics Data System (ADS)

    Jandura, D.; Pudis, D.; Gaso, P.

    2016-12-01

    In this paper we present preparation process of ring resonator in racetrack configuration based on polydimethylsiloxane (PDMS). 3D laser lithography in combination with imprinting technique was used to pattern photoresist layer as a master for imprinting process. In the next step, PDMS ring resonator was imprinted and filled with core PDMS. Finally, morphological properties of prepared device were investigated by scanning electron microscope (SEM) and confocal microscope and transmission spectrum measurements were performed.

  5. Fabrication of Plasmonic Nanodiscs by Photonic Nanojet Lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jooyoung; Cho, Kyuman; Kim, Inho; Kim, Won Mok; Lee, Taek Sung; Lee, Kyeong-Seok

    2012-02-01

    In this study, we present and demonstrate a new route to the fabrication of plasmonic nanostructures with a controlled size and shape using photonic nanojet lithography. Through the approach of dual-layer lift-off, the achievable size was remarkably reduced to a sub-100 nm scale and the introduction of an engineered diffuser was proved to give a facile and precise way of controlling the anisotropy in shape without a process burden even when the spherical focusing beads are used.

  6. Multiphoton laser lithography for the fabrication of plasmonic components

    NASA Astrophysics Data System (ADS)

    Passinger, Sven; Koch, Jürgen; Kiyan, Roman; Reinhardt, Carsten; Chichkov, Boris N.

    2006-08-01

    In this contribution, we demonstrate multi-photon femtosecond laser lithography for the fabrication and rapid prototyping of plasmonic components. Using this technology different dielectric and metallic SPP-structures can be fabricated in a low-cost and time-efficient way. Resolution limits of this technology will be discussed. Investigations of the optical properties of the fabricated SPP-structures by far-field leakage radiation microscopy will be reported.

  7. Large-Area Zone Plate Fabrication with Optical Lithography

    SciTech Connect

    Denbeaux, G.

    2011-09-09

    Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/{Delta}E = 700[1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/{Delta}E = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

  8. Extension of practical k1 limit in EUV lithography

    NASA Astrophysics Data System (ADS)

    Park, Sarohan; Lee, Inwhan; Koo, Sunyoung; Lee, Junghyung; Lim, Chang-Moon

    2016-03-01

    Sub 0.3k1 regime has been widely adopted for high volume manufacturing (HVM) of optical lithography due to various resolution enhancement technologies (RETs). It is not certain when such low k1 is feasible in EUV, though most technologies are available in EUV also. In this paper, experimental results on patterning performance of line space (L/S) and contact hole (C/H) in EUV lithography will be presented. First, practical k1 value with 0.33NA EUV lithography was investigated through experiment using NXE3300 EUV tool. Patterning limit, as defined by local critical dimension uniformity (LCDU) for C/H array pattern were measured with respect to various design rules. It was evaluated that the effect of off axis illumination (OAI) mode with various illumination conditions to improve the patterning performance and to reduce k1 limit. Then the experimental results of LCDU were compared with normalized image log slope (NILS) values from simulation. EUV source mask optimization (SMO) technologies to increase NILS with FlexPupil option of EUV scanner were evaluated and possibility of further improvement was also discussed.

  9. PSM design for inverse lithography with partially coherent illumination.

    PubMed

    Ma, Xu; Arce, Gonzalo R

    2008-11-24

    Phase-shifting masks (PSM) are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. Recently, a set of gradient-based PSM optimization methods have been developed to solve for the inverse lithography problem under coherent illumination. Most practical lithography systems, however, use partially coherent illumination due to non-zero width and off-axis light sources, which introduce partial coherence factors that must be accounted for in the optimization of PSMs. This paper thus focuses on developing a framework for gradient-based PSM optimization methods which account for the inherent nonlinearities of partially coherent illumination. In particular, the singular value decomposition (SVD) is used to expand the partially coherent imaging equation by eigenfunctions into a sum of coherent systems (SOCS). The first order coherent approximation corresponding to the largest eigenvalue is used in the PSM optimization. In order to influence the solution patterns to have more desirable manufacturability properties and higher fidelity, a post-processing of the mask pattern based on the 2D discrete cosine transformation (DCT) is introduced. Furthermore, a photoresist tone reversing technique is exploited in the design of PSMs to project extremely sparse patterns.

  10. Advanced lithography parameters extraction by using scatterometry system: part II

    NASA Astrophysics Data System (ADS)

    Zhou, Wenzhan; Hsieh, Michael; Koh, Huipeng; Zhou, Meisheng

    2008-03-01

    As the advanced IC device process shrinks to below sub-micron dimensions (65nm, 45 nm and beyond), the overall CD error budget becomes more and more challenging. The impact of lithography process parameters other than exposure energy and defocus on final CD results cannot be ignored any more. In this paper we continue the development of the advanced lithography parameters model which we presented last year. This year we achieved to decouple 4 lithography parameters: exposure, focus, PEB temperature and laser bandwidth (or z-blur). To improve the accuracy and precision of the model, new scatterometry marks are designed to reduce the pitch dependent accuracy impact of sidewall angle and photoresist height for scatterometry metrology. The concept of this kind of scatterometry mark design is from T.A. Brunner's paper "Process Monitor Gating" [SPIE Vol. 6518, 2007]. With this concept, new scatterometry marks are designed to increase the accuracy of scatterometry measurement without sacrificing the process sensitivity and thus improve the model prediction accuracy.

  11. Inverse Tomo-Lithography for Making Microscopic 3D Parts

    NASA Technical Reports Server (NTRS)

    White, Victor; Wiberg, Dean

    2003-01-01

    According to a proposal, basic x-ray lithography would be extended to incorporate a technique, called inverse tomography, that would enable the fabrication of microscopic three-dimensional (3D) objects. The proposed inverse tomo-lithographic process would make it possible to produce complex shaped, submillimeter-sized parts that would be difficult or impossible to make in any other way. Examples of such shapes or parts include tapered helices, paraboloids with axes of different lengths, and even Archimedean screws that could serve as rotors in microturbines. The proposed inverse tomo-lithographic process would be based partly on a prior microfabrication process known by the German acronym LIGA (lithographie, galvanoformung, abformung, which means lithography, electroforming, molding). In LIGA, one generates a precise, high-aspect ratio pattern by exposing a thick, x-ray-sensitive resist material to an x-ray beam through a mask that contains the pattern. One can electrodeposit metal into the developed resist pattern to form a precise metal part, then dissolve the resist to free the metal. Aspect ratios of 100:1 and patterns into resist thicknesses of several millimeters are possible.

  12. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  13. Advantages of Using Soft Materials in Scanning Probe Lithography

    NASA Astrophysics Data System (ADS)

    Brown, Keith A.; Eichelsdoerfer, Daniel J.; Wang, Mary X.; Mirkin, Chad A.

    2014-03-01

    Scanning probes based upon soft materials provide new capabilities and insights into the science of scanning probe lithography. Specifically, we have explored a cantilever-free architecture that consists of an array of sharp probes on an elastomeric film on a glass slide. This architecture allows every probe in an array to be in simultaneous, gentle contact with a surface, allowing one to perform lithography with millions of probes in parallel. Here, we describe three recent developments in cantilever-free scanning probe lithography that were enabled by the elastomeric material. 1) As the mechanical properties of elastomers can be readily tuned, it is possible to tailor the spring constant of the probes.1 2) The high coefficient of thermal expansion of elastomers means that local heating can be used to physically actuate individual probes allowing for arbitrary patterning.2 3) Solvents retained in the elastomer can mediate molecular printing and allow a user to pattern hydrophilic and hydrophobic materials in totally dry environments. 1D. J. Eichelsdoerfer, et al., Nano Lett. 13, 664 (2013). 2K. A. Brown, et al., Proc. Natl. Acad. Sci. USA 110, 12921 (2013).

  14. Low Cost Lithography Tool for High Brightness LED Manufacturing

    SciTech Connect

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  15. Immersed Boundary Simulations of Active Fluid Droplets

    PubMed Central

    Hawkins, Rhoda J.

    2016-01-01

    We present numerical simulations of active fluid droplets immersed in an external fluid in 2-dimensions using an Immersed Boundary method to simulate the fluid droplet interface as a Lagrangian mesh. We present results from two example systems, firstly an active isotropic fluid boundary consisting of particles that can bind and unbind from the interface and generate surface tension gradients through active contractility. Secondly, a droplet filled with an active polar fluid with homeotropic anchoring at the droplet interface. These two systems demonstrate spontaneous symmetry breaking and steady state dynamics resembling cell motility and division and show complex feedback mechanisms with minimal degrees of freedom. The simulations outlined here will be useful for quantifying the wide range of dynamics observable in these active systems and modelling the effects of confinement in a consistent and adaptable way. PMID:27606609

  16. An Immersive VR System for Sports Education

    NASA Astrophysics Data System (ADS)

    Song, Peng; Xu, Shuhong; Fong, Wee Teck; Chin, Ching Ling; Chua, Gim Guan; Huang, Zhiyong

    The development of new technologies has undoubtedly promoted the advances of modern education, among which Virtual Reality (VR) technologies have made the education more visually accessible for students. However, classroom education has been the focus of VR applications whereas not much research has been done in promoting sports education using VR technologies. In this paper, an immersive VR system is designed and implemented to create a more intuitive and visual way of teaching tennis. A scalable system architecture is proposed in addition to the hardware setup layout, which can be used for various immersive interactive applications such as architecture walkthroughs, military training simulations, other sports game simulations, interactive theaters, and telepresent exhibitions. Realistic interaction experience is achieved through accurate and robust hybrid tracking technology, while the virtual human opponent is animated in real time using shader-based skin deformation. Potential future extensions are also discussed to improve the teaching/learning experience.

  17. Immersion in water in labour and birth

    PubMed Central

    Cluett, Elizabeth R; Burns, Ethel

    2014-01-01

    Background Enthusiasts suggest that labouring in water and waterbirth increase maternal relaxation, reduce analgesia requirements and promote a midwifery model of care. Critics cite the risk of neonatal water inhalation and maternal/neonatal infection. Objectives To assess the evidence from randomised controlled trials about immersion in water during labour and waterbirth on maternal, fetal, neonatal and caregiver outcomes. Search methods We searched the Cochrane Pregnancy and Childbirth Group’s Trials Register (30 June 2011) and reference lists of retrieved studies. Selection criteria Randomised controlled trials comparing immersion in any bath tub/pool with no immersion, or other non-pharmacological forms of pain management during labour and/or birth, in women during labour who were considered to be at low risk of complications, as defined by the researchers. Data collection and analysis We assessed trial eligibility and quality and extracted data independently. One review author entered data and the other checked for accuracy. Main results This review includes 12 trials (3243 women): eight related to just the first stage of labour: one to early versus late immersion in the first stage of labour; two to the first and second stages; and another to the second stage only. We identified no trials evaluating different baths/pools, or the management of third stage of labour. Results for the first stage of labour showed there was a significant reduction in the epidural/spinal/paracervical analgesia/anaesthesia rate amongst women allocated to water immersion compared to controls (478/1254 versus 529/1245; risk ratio (RR) 0.90; 95% confidence interval (CI) 0.82 to 0.99, six trials). There was also a reduction in duration of the first stage of labour (mean difference −32.4 minutes; 95% CI −58.7 to −6.13). There was no difference in assisted vaginal deliveries (RR 0.86; 95% CI 0.71 to 1.05, seven trials), caesarean sections (RR 1.21; 95% CI 0.87 to 1.68, eight

  18. First: Florida Ir Silicon Immersion Grating Spectrometer

    NASA Astrophysics Data System (ADS)

    Ge, Jian; Zhao, B.; Wang, J.; Wan, X.; Powell, S.

    2012-01-01

    The FIRST silicon immersion grating spectrometer is being developed at UF to search for habitable Earth-like planets around M dwarfs and giant planets around young active stars. This compact cryogenic IR instrument is designed to have a spectral resolution of R=72,000 at 1.4-1.8 µm with a silicon immersion grating and R=60K at 0.8-1.35 µm with an R4 echelle. The goal is to reach a long term Doppler precision of 1-3 m/s for bright M dwarfs. The FIRST silicon immersion grating, with 54.74 degree blaze angle and 16 l/mm groove density, has been fully characterized in the lab. The 50x50 mm square grating entrance pupil is coated with a single layer of anti-reflection coating resulting in a 2.1% measured reflection loss. The grating surface was coated with a gold layer to increase grating surface reflectivity. It has produced R=110,000 diffraction limited spectral resolution at 1.523 micron in a lab test spectrograph with 20 mm pupil diameter. The integrated scattered light is less than 0.2\\% and grating has no visible ghosts down to the measuring instrument noise level. The grating efficiency is 69\\% at the peak of the blaze. This silicon immersion grating is ready for scientific observations with FIRST. FIRST is scheduled to be integrated in the lab during the spring of 2012 and see the first light at an astronomical telescope (TBD) the summer of 2012.

  19. Decoupling, situated cognition and immersion in art.

    PubMed

    Reboul, Anne

    2015-09-01

    Situated cognition seems incompatible with strong decoupling, where representations are deployed in the absence of their targets and are not oriented toward physical action. Yet, in art consumption, the epitome of a strongly decoupled cognitive process, the artwork is a physical part of the environment and partly controls the perception of its target by the audience, leading to immersion. Hence, art consumption combines strong decoupling with situated cognition.

  20. Wetting of a partially immersed compliant rod

    NASA Astrophysics Data System (ADS)

    Hui, Chung-Yuen; Jagota, Anand

    2016-11-01

    The force on a solid rod partially immersed in a liquid is commonly used to determine the liquid-vapor surface tension by equating the measured force required to remove the rod from the liquid to the vertical component of the liquid-vapor surface tension. Here, we study how this process is affected when the rod is compliant. For equilibrium, we enforce force and configurational energy balance, including contributions from elastic energy. We show that, in general, the contact angle does not equal that given by Young's equation. If surface stresses are tensile, the strain in the immersed part of the rod is found to be compressive and to depend only on the solid-liquid surface stress. The strain in the dry part of the rod can be either tensile or compressive, depending on a combination of parameters that we identify. We also provide results for compliant plates partially immersed in a liquid under plane strain and plane stress. Our results can be used to extract solid surface stresses from such experiments.

  1. Testing and analysis of immersed heat exchangers

    SciTech Connect

    Farrington, R.B.; Bingham, C.E.

    1986-08-01

    The objectives were to determine the performance of four immersed, ''supply-side'' heat exchangers used in solar domestic-hot-water systems; to examine the effects of flow rate, temperature difference, and coil configuration on performance; and to develop a simple model to predict the performance of immersed heat exchangers. We tested four immersed heat exchangers: a smooth coil, a finned spiral, a single-wall bayonet, and a double-wall bayonet. We developed two analyticl models and a simple finite difference model. We experimentally verified that the performance of these heat exchangers depends on the flow rate through them; we also showed that the temperature difference between the heat exchanger's inlet and the storage tank can strongly affect a heat exchanger's performance. We also compared the effects of the heat exchanger's configuration and correlated Nusselt and Rayleigh numbers for each heat exchanger tested. The smooth coil had a higher effectiveness than the others, while the double-wall bayonet had a very low effectiveness. We still do not know the long-term effectiveness of heat exchangers regarding scale accumulation, nor do we know the effects of very low flow rates on a heat exchanger's performance.

  2. Ice-Water Immersion and Cold-Water Immersion Provide Similar Cooling Rates in Runners With Exercise-Induced Hyperthermia.

    PubMed

    Clements, Julie M; Casa, Douglas J; Knight, J; McClung, Joseph M; Blake, Alan S; Meenen, Paula M; Gilmer, Allison M; Caldwell, Kellie A

    2002-06-01

    OBJECTIVE: To assess whether ice-water immersion or cold-water immersion is the more effective treatment for rapidly cooling hyperthermic runners. DESIGN AND SETTING: 17 heat-acclimated highly trained distance runners (age = 28 +/- 2 years, height = 180 +/- 2 cm, weight = 68.5 +/- 2.1 kg, body fat = 11.2 +/- 1.3%, training volume = 89 +/- 10 km/wk) completed a hilly trail run (approximately 19 km and 86 minutes) in the heat (wet-bulb globe temperature = 27 +/- 1 degrees C) at an individually selected "comfortable" pace on 3 occasions 1 week apart. The random, crossover design included (1) distance run, then 12 minutes of ice-water immersion (5.15 +/- 0.20 degrees C), (2) distance run, then 12 minutes of cold-water immersion (14.03 +/- 0.28 degrees C), or (3) distance run, then 12 minutes of mock immersion (no water, air temperature = 28.88 +/- 0.76 degrees C). MEASUREMENTS: Each subject was immersed from the shoulders to the hip joints for 12 minutes in a tub. Three minutes elapsed between the distance run and the start of immersion. Rectal temperature was recorded at the start of immersion, at each minute of immersion, and 3, 6, 10, and 15 minutes postimmersion. No rehydration occurred during any trial. RESULTS: Length of distance run, time to complete distance run, rectal temperature, and percentage of dehydration after distance run were similar (P >.05) among all trials, as was the wet-bulb globe temperature. No differences (P >.05) for cooling rates were found when comparing ice-water immersion, cold-water immersion, and mock immersion at the start of immersion to 4 minutes, 4 to 8 minutes, and the start of immersion to 8 minutes. Ice-water immersion and cold-water immersion cooling rates were similar (P >.05) to each other and greater (P <.05) than mock immersion at 8 to 12 minutes, the start of immersion to 10 minutes, and the start of immersion to every other time point thereafter. Rectal temperatures were similar (P >.05) between ice-water immersion and

  3. Double exposure technology for KrF lithography

    NASA Astrophysics Data System (ADS)

    Geisler, S.; Bauer, J.; Haak, U.; Stolarek, D.; Schulz, K.; Wolf, H.; Meier, W.; Trojahn, M.; Matthus, E.; Beyer, H.; Old, G.; Marschmeyer, St.; Kuck, B.

    2008-04-01

    The application of Double Exposure Lithography (DEL) would enlarge the capability of 248 nm exposure technique to smaller pitch. We will use the DEL for the integration of critical layers for dedicated applications requiring resolution enhancement into 0.13 μm BiCMOS technology. In this paper we present the overlay precision and the focus difference of 1st and 2nd exposure as critical parameters of the DEL for k I <= 0.3 lithography (100 nm half pitch) with binary masks (BIM). The realization of excellent overlay (OVL) accuracy is a main key of double exposure and double patterning techniques. We show the DEL requires primarily a good mask registration, when the wafer stays in the scanner for both exposures without alignment between 1st and 2nd exposure. The exposure tool overlay error is more a practical limit for double patterning lithography (DPL). Hence we prefer the DEL for the resolution enhancement, especially if we use the KrF high NA lithography tool for 130 nm generation. Experimental and simulated results show that the critical dimension uniformity (CDU) depends strongly on the overlay precision. The DEL results show CDU is not only affected by the OVL but also by an optical proximity effect of 1st and 2nd exposure and the mask registration. The CD uniformity of DEL demands a low focus difference between 1st and 2nd exposure and therefore requires a good focus repeatability of the exposure tool. The Depth of Focus (DOF) of 490 nm at stable CD of lines was achieved for DEL. If we change the focus of one of the exposures the CD-focus performance of spaces was reduced with simultaneous line position changing. CDU vs. focus difference between 1st and 2nd exposure demands a focus repeatability <100 nm for the exposure tool. Summary, the results show DEL has the potential to be a practical lithography enhancement method for device fabrication using high NA KrF tool generation.

  4. Design of soft x-ray varied-line-spacing grating based on electron beam lithography-near field lithography

    NASA Astrophysics Data System (ADS)

    Lin, Dakui; Chen, Huoyao; Kroker, Stefanie; Käsebier, Thomas; Liu, Zhengkun; Qiu, Keqiang; Liu, Ying; Kley, Ernst-Bernhard; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2016-10-01

    Soft x-ray varied line spacing grating (VLSG), which is a vital optical element for laser plasma diagnosis and spectrometry analysis, is conventionally fabricated by holographic lithography or mechanical ruling. In order to overcome the issues of the above fabrication methods, a method based on electron beam lithography-near field lithography (EBL-NFH) is proposed to make good use of the flexibility of EBL and the high throughput of NFH. In this paper, we showed a newly designed soft x-ray VLSG with a central groove density of 3600 lines/mm, which is to be realized based on EBL-NFH. First, the optimization of the spatial distribution of line density and groove profile of the VLSG was shown. As an important element in NFH, a fused silica mask plays a key role during NFH in order to obtain a required line density of VLSG. Therefore, second, the transfer relationship of spatial distribution of line densities between fused silica mask and resist grating was investigated in different exposure modes during NFH. We proposed a formulation about the transfer of line density to design of the groove density distribution of a fused silica grating mask. Finally, the spatial distribution of line densities between the fused silica mask, which is to be fabrication by using EBL, was demonstrated.

  5. Art, science, and immersion: data-driven experiences

    NASA Astrophysics Data System (ADS)

    West, Ruth G.; Monroe, Laura; Ford Morie, Jacquelyn; Aguilera, Julieta

    2013-03-01

    This panel and dialog-paper explores the potentials at the intersection of art, science, immersion and highly dimensional, "big" data to create new forms of engagement, insight and cultural forms. We will address questions such as: "What kinds of research questions can be identified at the intersection of art + science + immersive environments that can't be expressed otherwise?" "How is art+science+immersion distinct from state-of-the art visualization?" "What does working with immersive environments and visualization offer that other approaches don't or can't?" "Where does immersion fall short?" We will also explore current trends in the application of immersion for gaming, scientific data, entertainment, simulation, social media and other new forms of big data. We ask what expressive, arts-based approaches can contribute to these forms in the broad cultural landscape of immersive technologies.

  6. Skin Microcirculatory Dysfunction Induced by 7 Days of Dry Immersion

    NASA Astrophysics Data System (ADS)

    Navasiolava, N. M.; Tsvirkun, D. V.; Pastushkova, L. Kh.; Larina, I. M.; Dobrokhotov, I. V.; Fortrat, J. O.; Gharib, G.; Gauquelin-Koch, G.; Custaud, M.-A.

    2008-06-01

    To study the effects of microgravity on the skin microcirculatory function, basal blood flow and stimulated vasodilation were determined at the calf level by laser Doppler flowmetry in 8 male subjects before, during and after 7 days of dry immersion. Endothelium-dependent and - independent vasodilation was assessed using iontophoresis of acetylcholine and sodium nitroprusside, respectively. Basal blood flow was significantly reduced on the third day of immersion (13 ± 1 arbitrary units (AU) vs. 33 ± 8 AU pre-immersion level, p < 0.05) and rested decreased up to the end of immersion. Endothelium dependent vasodilation was significantly decreased on the seventh day of immersion in comparison with pre-immersion values (12 ± 6% vs. 29 ± 6% of max vasodilation, p < 0.05). Our results support the idea that dry immersion induces changes in skin microcirculation with impairment of endothelial functions. Microcirculatory impairment should be considered as an important factor of the cardiovascular deconditioning.

  7. Hypervolemia and plasma vasopressin response during water immersion in men

    NASA Technical Reports Server (NTRS)

    Greenleaf, J. E.; Morse, J. T.; Barnes, P. R.; Silver, J.; Keil, L. C.

    1983-01-01

    Immersion studies were performed on seven mildly dehydrated male subjects to examine the effect of suppression of plasma vasopressin (PVP) on diuresis in water immersion. The water was kept at close to 34.5 C and the subjects remained in the water for 4 hr after sitting for 2 hr. Na and K levels in the serum and urine were analyzed, as were osmolality, red blood cell count, renin activity, total protein, albumin amounts, hematocrit, and hemoglobin. Plasma volume was monitored from samples drawn at specified intervals during immersion. The plasma volume increased significantly 30 min after immersion, but no PVP was observed. The dehydration induced elevated serum osmotic concentrations. It is concluded that the hydration condition before immersion and the volume of fluid intake during immersion affects the hemodilution during immersion.

  8. Lithography alternatives meet design style reality: How do they "line" up?

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.

    2016-03-01

    Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to

  9. Accurate lithography hotspot detection based on PCA-SVM classifier with hierarchical data clustering

    NASA Astrophysics Data System (ADS)

    Gao, Jhih-Rong; Yu, Bei; Pan, David Z.

    2014-03-01

    As technology nodes continues shrinking, layout patterns become more sensitive to lithography processes, resulting in lithography hotspots that need to be identified and eliminated during physical verification. In this paper, we propose an accurate hotspot detection approach based on PCA (principle component analysis)-SVM (sup- port vector machine) classifier. Several techniques, including hierarchical data clustering, data balancing, and multi-level training, are provided to enhance performance of the proposed approach. Our approach is accurate and more efficient than conventional time-consuming lithography simulation; in the meanwhile, provides high flexibility to adapt to new lithography processes and rules.

  10. Step and flash imprint lithography: A low-pressure, room-temperature nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Colburn, Matthew Earl

    Lithography process has been proven to be a high-resolution technique capable of patterning a wide variety of substrate at room temperature under low applied pressure in a fashion consistent with high volume manufacturing requirements.

  11. Induced polarization imaging and other topics associated with the solid immersion lens

    NASA Astrophysics Data System (ADS)

    Chen, Tao

    An induced evanescent polarization imaging system and associated topics using a solid immersion lens (SIL) are demonstrated in this dissertation. The physics and properties of induced polarization signal of the SIL are studied by both simulations and experiments. In the SIL optical system, with a linearly-polarized incident illumination light at the entrance pupil, an orthogonal component of polarization is induced upon reflection from the SIL. This orthogonal polarization signal contains information of both air gap height h between the bottom of the SIL and the top surface of the sample. It is used as the air gap control signal in the SIL system. An experimental SIL near-field microscope setup is developed and demonstrated. A compact mechanical package is developed for a standard microscope that implements a SIL on a retractable bimorph swing arm. With the compact package mounted on an inverted microscope, far-field and near-field images are obtained at the same location by moving the SIL with the swing arm. A 25 mum diameter and 0.8 mum high circular pedestal in the center of the flat portion of the SIL is fabricated, along with a conically shaped surrounding region. The image contrast enhancement, high lateral resolution and height information are obtained with induced polarization evanescent imaging using SIL. Experiments are conducted by imaging features on a patterned Si substrate. Imaging theory is used to predict optimum orientation of high-spatial-frequency samples, and a topographical image is derived from the induced polarization image through a calibration procedure. A numerical aperture of NA=1.5 is used in the experiment. Height accuracy of +/- 2nm is demonstrated with a known sample. A new lithography system employing a solid immersion lens (SIL) is proposed and primitive experiment results are presented. SIL technology is a direct-writing technique, where high resolution is easily achieved without a mask.

  12. Double-Sided Opportunities Using Chemical Lift-Off Lithography.

    PubMed

    Andrews, Anne M; Liao, Wei-Ssu; Weiss, Paul S

    2016-08-16

    We discuss the origins, motivation, invention, development, applications, and future of chemical lift-off lithography, in which a specified pattern of a self-assembled monolayer is removed, i.e., lifted off, using a reactive, patterned stamp that is brought into contact with the monolayer. For Au substrates, this process produces a supported, patterned monolayer of Au on the stamp in addition to the negative pattern in the original molecular monolayer. Both the patterned molecular monolayer on the original substrate and the patterned supported metal monolayer on the stamp are useful as materials and for further applications in sensing and other areas. Chemical lift-off lithography effectively lowers the barriers to and costs of high-resolution, large-area nanopatterning. On the patterned monolayer side, features in the single-nanometer range can be produced across large (square millimeter or larger) areas. Patterns smaller than the original stamp feature sizes can be produced by controlling the degree of contact between the stamp and the lifted-off monolayer. We note that this process is different than conventional lift-off processes in lithography in that chemical lift-off lithography removes material, whereas conventional lift-off is a positive-tone patterning method. Chemical lift-off lithography is in some ways similar to microtransfer printing. Chemical lift-off lithography has critical advantages in the preparation of biocapture surfaces because the molecules left behind are exploited to space and to orient functional(ized) molecules. On the supported metal monolayer side, a new two-dimensional material has been produced. The useful important chemical properties of Au (vis-à-vis functionalization with thiols) are retained, but the electronic and optical properties of bulk Au or even Au nanoparticles are not. These metal monolayers do not quench excitation and may be useful in optical measurements, particularly in combination with selective binding due to

  13. 3D Immersive Visualization with Astrophysical Data

    NASA Astrophysics Data System (ADS)

    Kent, Brian R.

    2017-01-01

    We present the refinement of a new 3D immersion technique for astrophysical data visualization.Methodology to create 360 degree spherical panoramas is reviewed. The 3D software package Blender coupled with Python and the Google Spatial Media module are used together to create the final data products. Data can be viewed interactively with a mobile phone or tablet or in a web browser. The technique can apply to different kinds of astronomical data including 3D stellar and galaxy catalogs, images, and planetary maps.

  14. 3DIVS: 3-Dimensional Immersive Virtual Sculpting

    SciTech Connect

    Kuester, F; Duchaineau, M A; Hamann, B; Joy, K I; Uva, A E

    2001-10-03

    Virtual Environments (VEs) have the potential to revolutionize traditional product design by enabling the transition from conventional CAD to fully digital product development. The presented prototype system targets closing the ''digital gap'' as introduced by the need for physical models such as clay models or mockups in the traditional product design and evaluation cycle. We describe a design environment that provides an intuitive human-machine interface for the creation and manipulation of three-dimensional (3D) models in a semi-immersive design space, focusing on ease of use and increased productivity for both designer and CAD engineers.

  15. Design of the ultraprecision stage for lithography using VCM

    NASA Astrophysics Data System (ADS)

    Kim, Jung-Han; Kim, Mun-Su; Oh, Min-Taek

    2007-12-01

    This paper presents a new design of precision stage for the reticle in lithography process and a low hunting control method for the stage. The stage has three axes for X,Y, θ Z, those actuated by three voice coil motors individually. The proposed precision stage system has three gap sensors and voice coil motors, and supported by four air bearings, so it do not have any mechanical contact and nonlinear effect such as hysterisis which usually degrade performance in nano level movement. The reticle stage has cross coupled dynamics between X,Y,θ Z, axes, so the forward and inverse kinematics were solved to get an accurate reference position. When the stage is in regulating control mode, there always exist small fluctuations (stage hunting) in the stage movement. Because the low stage hunting characteristic is very important in recent lithography and nano-level applications, the proposed stage has a special regulating controller composed of digital filter, adjustor and switching algorithm. Another importance factor that generates hunting noise is the system noise inside the lithography machine such as EMI from another motor and solenoids. For reducing such system noises, the proposed controller has a two-port transmission system that transfers torque command signal from the DSP board to the amplifier. The low hunting control algorithm and two-port transmission system reduced hunting noise as 35nm(rms) when a conventional PID generates 77nm(rms) in the same mechanical system. The experimental results showed that the reticle system has 100nm linear accuracy and 1μ rad rotation accuracy at the control frequency of 8 kHz.

  16. Sources for beyond extreme ultraviolet lithography and water window imaging

    NASA Astrophysics Data System (ADS)

    O'Sullivan, Gerry; Li, Bowen; Dunne, Padraig; Hayden, Paddy; Kilbane, Deirdre; Lokasani, Ragava; Long, Elaine; Ohashi, Hayato; O'Reilly, Fergal; Sheil, John; Sheridan, Paul; Sokell, Emma; Suzuki, Chihiro; White, Elgiva; Higashiguchi, Takeshi

    2015-05-01

    Lithography tools are being built and shipped to semiconductor manufacturers for high volume manufacturing using extreme ultraviolet lithography (EUVL) at a wavelength of 13.5 nm. This wavelength is based on the availability of Mo/Si multilayer mirrors (MLMs) with a reflectivity of ˜70% at this wavelength. Moreover, the primary lithography tool manufacturer, ASML, has identified 6.x nm, where x˜7, as the wavelength of choice for so-called Beyond EUVL, based on the availability of La/B4C MLMs, with theoretical reflectance approaching 80% at this wavelength. The optimum sources have been identified as laser produced plasmas of Gd and Tb, as n = 4-n = 4 transitions in their ions emit strongly near this wavelength. However, to date, the highest conversion efficiency obtained, for laser to EUV energy emitted within the 0.6% wavelength bandwidth of the mirror is only 0.8%, pointing to the need to identify other potential sources or consider the selection of other wavelengths. At the same time, sources for other applications are being developed. Conventional sources for soft x-ray microscopy use H-like line emission from liquid nitrogen or carbon containing liquid jets which can be focused using zone plates. Recently the possibility of using MLMs with n = 4-n = 4 emission from a highly charged Bi plasma was proposed and subsequently the possibility of using Δn = 1 transitions in 3rd row transition elements was identified. All of these studies seek to identify spectral features that coincide with the reflectance characteristics of available MLMs, determine the conditions under which they are optimized and establish the maximum conversion efficiencies obtainable. Thus, there is a need for systematic studies of laser produced plasmas of a wide range of elements as some of the challenges are similar for all of these sources and some recent results will be presented.

  17. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  18. Low-cost method for producing extreme ultraviolet lithography optics

    DOEpatents

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  19. Semicrystalline woodpile photonic crystals without complicated alignment via soft lithography

    SciTech Connect

    Lee, Jae-Hwang; Kuang, Ping; Leung, Wai; Kim, Yong-Sung; Park, Joong-Mok; Kang, Henry; Constant, Kristen; Ho, Kai-Ming

    2010-05-13

    We report the fabrication and characterization of woodpile photonic crystals with up to 12 layers through titania nanoparticle infiltration of a polymer template made by soft lithography. Because the complicated alignment in the conventional layer-by-layer fabrication associated with diamondlike symmetry is replaced by a simple 90{sup o} alignment, the fabricated photonic crystal has semicrystalline phase. However, the crystal performs similarly to a perfectly aligned crystal for the light propagation integrated from the surface normal to 30{sup o} at the main photonic band gap.

  20. Modeling the lithography of ion implantation resists on topography

    NASA Astrophysics Data System (ADS)

    Winroth, Gustaf; Vaglio Pret, Alessandro; Ercken, Monique; Robinson, Stewart A.; Biafore, John J.

    2014-03-01

    With emerging technologies, such as fin-based field-effect transistors (finFETs), the structures, which define the functionality of a device, have added one dimension in the patterning and are now three-dimensional. Lithography for CMOS patterning becomes more complicated for finFETs given the three-dimensional substrate structure, and the resist modeling targeting this issue is yet to be fully investigated. Here, we present lithographic simulations on topography relevant for finFET devices compatible with nodes down to 10 nm. We investigate the influence of different materials and of the additional optical complexity due to the topography and density of the gates and fins.

  1. Nanoimprint Lithography of Al Nanovoids for Deep-UV SERS

    PubMed Central

    2014-01-01

    Deep-ultraviolet surface-enhanced Raman scattering (UV-SERS) is a promising technique for bioimaging and detection because many biological molecules possess UV absorption lines leading to strongly resonant Raman scattering. Here, Al nanovoid substrates are developed by combining nanoimprint lithography of etched polymer/silica opal films with electron beam evaporation, to give a high-performance sensing platform for UV-SERS. Enhancement by more than 3 orders of magnitude in the UV-SERS performance was obtained from the DNA base adenine, matching well the UV plasmonic optical signatures and simulations, demonstrating its suitability for biodetection. PMID:25291629

  2. Self-cleaning optic for extreme ultraviolet lithography

    DOEpatents

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  3. Laser Produced X-Ray for High Resolution Lithography.

    DTIC Science & Technology

    2014-09-26

    Neodymium Laser Pulse ....... ....................... ... 24 Figure 11. Densitometer Trace of Al X-Ray Spectrum ........... ... 26...typical x-ray lithography experiments, 100 joule light pulses with a nanosecond pulse width (full-width-half-maximum) were produced with a neodymium -doped...34."..’’’.. ’ ’.’/ .. ".-".’ ’ ’ . > . . ’ ’ ’ ’ ’ , ’ : . r "" ’ "" " " ". . . .;" 23 The Laser -, The laser used in prior research is a neodymium

  4. Recent Printing And Registration Results With X-Ray Lithography

    NASA Astrophysics Data System (ADS)

    Fay, B.; Tai, L.; Alexander, D.

    1985-06-01

    X-ray lithography has matured from a research and development phase to an implementation phase. Accordingly, the concerns have shifted from imaging issues to those of registration, critical dimension control, step height coverage, and system repeatability. In this paper, results will be discussed relating to x-ray printing and registration for full field alignment systems with 100mm field diameter using optical verniers, SEM (scanning electron microscope) and electrical wafer probe techniques. These results will encompass micrometer and submicrometer imaging using single 'level and tri-level processing techniques.

  5. Flexible Transition Metal Oxide Electronics and Imprint Lithography

    NASA Astrophysics Data System (ADS)

    Jackson, Warren B.

    The previous chapters have discussed inorganic low-deposition temperature materials suitable for flexible applications, such as amorphous and nano-crystalline-silicon (Si) and organic conductors. This chapter presents the results of a recently developed inorganic low-temperature materials system, transition metal oxides (TMOs), that appears to be a very promising, new high-performance flexible electronic materials system. An equally, if not more, important part of this chapter, is the presentation of self-aligned imprint lithography (SAIL) a new fabrication method for flexible substrates that solves the layer-to-layer alignment problem.

  6. LPP-EUV light source for HVM lithography

    NASA Astrophysics Data System (ADS)

    Saito, T.; Ueno, Y.; Yabu, T.; Kurosawa, A.; Nagai, S.; Yanagida, T.; Hori, T.; Kawasuji, Y.; Abe, T.; Kodama, T.; Nakarai, H.; Yamazaki, T.; Mizoguchi, H.

    2017-01-01

    We have been developing a laser produced plasma extremely ultra violet (LPP-EUV) light source for a high volume manufacturing (HVM) semiconductor lithography. It has several unique technologies such as the high power short pulse carbon dioxide (CO2) laser, the short wavelength solid-state pre-pulse laser and the debris mitigation technology with the magnetic field. This paper presents the key technologies for a high power LPP-EUV light source. We also show the latest performance data which is 188W EUV power at intermediate focus (IF) point with 3.7% conversion efficiency (CE) at 100 kHz.

  7. Optical laue diffraction on photonic structures designed by laser lithography

    NASA Astrophysics Data System (ADS)

    Samusev, K. B.; Rybin, M. V.; Lukashenko, S. Yu.; Limonov, M. F.

    2016-06-01

    Two-dimensional photonic crystals with square symmetry C 4v were obtained using the laser lithography method. The structure of these samples was studied by scanning electron microscopy. Optical Laue diffraction for monochromatic light was studied experimentally depending on the incidence angle of laser beam and lattice constant. Interpretation of the observed diffraction patterns is given in the framework of the Laue diffraction mechanism for an one-dimensional chain of scattering elements. Red thresholds for different diffraction orders were determined experimentally and theoretically. The results of calculations are in an excellent agreement with experiment.

  8. Masks for high aspect ratio x-ray lithography

    SciTech Connect

    Malek, C.K.; Jackson, K.H.; Bonivert, W.D.; Hruby, J.

    1997-04-01

    Fabrication of very high aspect ratio microstructures, as well as ultra-high precision manufacturing is of increasing interest in a multitude of applications. Fields as diverse as micromechanics, robotics, integrated optics, and sensors benefit from this technology. The scale-length of this spatial regime is between what can be achieved using classical machine tool operations and that which is used in microelectronics. This requires new manufacturing techniques, such as the LIGA process, which combines x-ray lithography, electroforming, and plastic molding.

  9. Resistless lithography - selective etching of silicon with gallium doping regions

    NASA Astrophysics Data System (ADS)

    Abdullaev, D.; Milovanov, R.; Zubov, D.

    2016-12-01

    This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

  10. Vesicle electrohydrodynamic simulations by coupling immersed boundary and immersed interface method

    NASA Astrophysics Data System (ADS)

    Hu, Wei-Fan; Lai, Ming-Chih; Seol, Yunchang; Young, Yuan-Nan

    2016-07-01

    In this paper, we develop a coupled immersed boundary (IB) and immersed interface method (IIM) to simulate the electrodeformation and electrohydrodynamics of a vesicle in Navier-Stokes leaky dielectric fluids under a DC electric field. The vesicle membrane is modeled as an inextensible elastic interface with an electric capacitance and an electric conductance. Within the leaky dielectric framework and the piecewise constant electric properties in each fluid, the electric stress can be treated as an interfacial force so that both the membrane electric and mechanical forces can be formulated in a unified immersed boundary method. The electric potential and transmembrane potential are solved simultaneously via an efficient immersed interface method. The fluid variables in Navier-Stokes equations are solved using a projection method on a staggered MAC grid while the electric potential is solved at the cell center. A series of numerical tests have been carefully conducted to illustrate the accuracy and applicability of the present method to simulate vesicle electrohydrodynamics. In particular, we investigate the prolate-oblate-prolate (POP) transition and the effect of electric field and shear flow on vesicle electrohydrodynamics. Our numerical results are in good agreement with those obtained in previous work using different numerical algorithms.

  11. Reclassification Patterns among Latino English Learner Students in Bilingual, Dual Immersion, and English Immersion Classrooms

    ERIC Educational Resources Information Center

    Umansky, Ilana M.; Reardon, Sean F.

    2014-01-01

    Schools are under increasing pressure to reclassify their English learner (EL) students to "fluent English proficient" status as quickly as possible. This article examines timing to reclassification among Latino ELs in four distinct linguistic instructional environments: English immersion, transitional bilingual, maintenance bilingual,…

  12. Immersion francaise precoce: Mathematique 1-7 (Early French Immersion: Mathematics 1-7).

    ERIC Educational Resources Information Center

    Burt, Andy; And Others

    This mathematics curriculum guide is intended for use in grades 1-7 in the early French immersion program. After an initial listing of textbooks in French for teachers and students, it presents: (1) a general overview of the theory of modern mathematics and a suggested sequence of activities; (2) some notes on the application of the theory and a…

  13. VILLAGE--Virtual Immersive Language Learning and Gaming Environment: Immersion and Presence

    ERIC Educational Resources Information Center

    Wang, Yi Fei; Petrina, Stephen; Feng, Francis

    2017-01-01

    3D virtual worlds are promising for immersive learning in English as a Foreign Language (EFL). Unlike English as a Second Language (ESL), EFL typically takes place in the learners' home countries, and the potential of the language is limited by geography. Although learning contexts where English is spoken is important, in most EFL courses at the…

  14. Immersed boundary methods for viscoelastic particulate flows

    NASA Astrophysics Data System (ADS)

    Krishnan, Sreenath; Shaqfeh, Eric; Iaccarino, Gianluca

    2015-11-01

    Viscoelastic particulate suspensions play key roles in many energy applications. Our goal is to develop a simulation-based tool for engineering such suspensions. This study is concerned with fully resolved simulations, wherein all flow scales associated with the particle motion are resolved. The present effort is based on Immersed Boundary methods, in which the domain grids do not conform to particle geometry. In this approach, the conservation of momentum equations, which include both Newtonian and non-Newtonian stresses, are solved over the entire domain including the region occupied by the particles. The particles are defined on a separate Lagrangian mesh that is free to move over an underlying Eulerian grid. The development of an immersed boundary forcing technique for moving bodies within an unstructured-mesh, massively parallel, non-Newtonian flow solver is thus developed and described. The presentation will focus on the numerical algorithm and measures taken to enable efficient parallelization and transfer of information between the underlying fluid grid and the particle mesh. Several validation test cases will be presented including sedimentation under orthogonal shear - a key flow in drilling muds and fracking fluids.

  15. Foreign language learning in immersive virtual environments

    NASA Astrophysics Data System (ADS)

    Chang, Benjamin; Sheldon, Lee; Si, Mei; Hand, Anton

    2012-03-01

    Virtual reality has long been used for training simulations in fields from medicine to welding to vehicular operation, but simulations involving more complex cognitive skills present new design challenges. Foreign language learning, for example, is increasingly vital in the global economy, but computer-assisted education is still in its early stages. Immersive virtual reality is a promising avenue for language learning as a way of dynamically creating believable scenes for conversational training and role-play simulation. Visual immersion alone, however, only provides a starting point. We suggest that the addition of social interactions and motivated engagement through narrative gameplay can lead to truly effective language learning in virtual environments. In this paper, we describe the development of a novel application for teaching Mandarin using CAVE-like VR, physical props, human actors and intelligent virtual agents, all within a semester-long multiplayer mystery game. Students travel (virtually) to China on a class field trip, which soon becomes complicated with intrigue and mystery surrounding the lost manuscript of an early Chinese literary classic. Virtual reality environments such as the Forbidden City and a Beijing teahouse provide the setting for learning language, cultural traditions, and social customs, as well as the discovery of clues through conversation in Mandarin with characters in the game.

  16. Immersive 3D Visualization of Astronomical Data

    NASA Astrophysics Data System (ADS)

    Schaaff, A.; Berthier, J.; Da Rocha, J.; Deparis, N.; Derriere, S.; Gaultier, P.; Houpin, R.; Normand, J.; Ocvirk, P.

    2015-09-01

    The immersive-3D visualization, or Virtual Reality in our study, was previously dedicated to specific uses (research, flight simulators, etc.) The investment in infrastructure and its cost was reserved to large laboratories or companies. Lately we saw the development of immersive-3D masks intended for wide distribution, for example the Oculus Rift and the Sony Morpheus projects. The usual reaction is to say that these tools are primarily intended for games since it is easy to imagine a player in a virtual environment and the added value to conventional 2D screens. Yet it is likely that there are many applications in the professional field if these tools are becoming common. Introducing this technology into existing applications or new developments makes sense only if interest is properly evaluated. The use in Astronomy is clear for education, it is easy to imagine mobile and light planetariums or to reproduce poorly accessible environments (e.g., large instruments). In contrast, in the field of professional astronomy the use is probably less obvious and it requires to conduct studies to determine the most appropriate ones and to assess the contributions compared to the other display modes.

  17. Immersive STEM: From Fulldome to VR Technologies

    NASA Astrophysics Data System (ADS)

    Wyatt, R. J.

    2015-12-01

    For more than 15 years, fulldome video technology has transformed planetariums worldwide, using data-driven visualizations to support science storytelling. Fulldome video shares significant technical infrastructure with emerging VR headset technologies, and these personalized VR experiences allow for new audiences and new experiences of an existing library of context—as well as affording new opportunities for fulldome producers to explore. At the California Academy of Sciences, we are translating assets for our planetarium shows into immersive experiences for a variety of HR headsets. We have adapted scenes from our four award-wining features—Fragile Planet (2008), Life: A Cosmic Story (2010), Earthquake: Evidence of a Restless Planet (2012), and Habitat Earth (2015)—to place viewers inside a virtual planetarium viewing the shows. Similarly, we have released two creative-commons mini-shows on various VR outlets. This presentation will also highlight content the Academy will make available from our upcoming 2016 planetarium show about asteroids, comets, and solar system origins, some of which has been formatted for a full four-pi-steradian perspective. The shared immersive environment of digital planetariums offers significant opportunities for education and affective engagement of STEM-hungry audiences—including students, families, and adults. With the advent of VR technologies, we can leverage the experience of fulldome producers and planetarium professionals to create personalized home experiences that allow new ways to experience their content.

  18. Gold nanowires fabricated by immersion plating.

    PubMed

    Hsu, Chih-Chieh; Shen, Fang-Yee; Huang, Fon-Shan

    2008-05-14

    The growth mechanism of oriented Au nanowires fabricated by immersion plating was investigated. Both n-type crystal Si (c-Si) and amorphous Si (a-Si) with an electron-beam (E-beam) patterned resist nanotrench were immersed into the plating bath HAuCl(4)/HF. For the Au nanowires fabricated on c-Si, voids, nanograins, and clusters were observed at various plating conditions, time and temperature. The voids were often found in the center of the Au nanowires due to there being fewer nucleation sites on the c-Si surface. However, Au can easily nucleate on the surface of a-Si and form continuous Au nanowires with grain sizes about 10-50 nm. The resistivities of Au nanowires with width 105 nm fabricated on a-Si are about 4.4-6.5 µΩ cm. After annealing at 200 °C for 30 min in N(2) ambient, the resistivities are lowered to about 3.0-3.9 µΩ cm, measured in an atomic force microscope (AFM) in contact mode. The grain size of Au is in the range of ∼50-100 nm. A scanning electron microscope (SEM) examination and grazing incident x-ray diffraction (GIXRD) analysis were also carried out to study the morphology and crystalline structure of the Au nanowires.

  19. An immersed boundary method for endocytosis

    NASA Astrophysics Data System (ADS)

    Tseng, Yu-Hau; Huang, Huaxiong

    2014-09-01

    Endocytosis is one of the cellular functions for capturing (engulfing) vesicles or microorganisms. Understanding the biophysical mechanisms of this cellular process is essential from a bioengineering point of view since it will provide guidance for developing effective targeted drug delivery therapies. In this paper, we propose an immersed boundary (IB) method that can be used to simulate the dynamical process of this important biological function. In our model, membranes of the vesicle and the cell are treated as Canham-Helfrich Hamiltonian interfaces. The membrane-bound molecules are modeled as insoluble surfactants such that the molecules after binding are regarded as a product of a “chemical” reaction. Our numerical examples show that the immersed boundary method is a useful simulation tool for studying endocytosis, where the roles of interfacial energy, fluid flow and viscous dissipation in the success of the endocytosis process can be investigated in detail. A distinct feature of our IB method is the treatment of the two binding membranes that is different from the merging of fluid-fluid interfaces. Another important feature of our method is the strict conservation of membrane-borne receptors and ligands, which is important for predicting the dynamics of the endocytosis process.

  20. Cavitation passive control on immersed bodies

    NASA Astrophysics Data System (ADS)

    Javadi, Khodayar; Dorostkar, Mohammad Mortezazadeh; Katal, Ali

    2017-01-01

    This paper introduces a new idea of controlling cavitation around a hydrofoil through a passive cavitation controller called artificial cavitation bubble generator (ACG). Cyclic processes, namely, growth and implosion of bubbles around an immersed body, are the main reasons for the destruction and erosion of the said body. This paper aims to create a condition in which the cavitation bubbles reach a steady-state situation and prevent the occurrence of the cyclic processes. For this purpose, the ACG is placed on the surface of an immersed body, in particular, the suction surface of a 2D hydrofoil. A simulation was performed with an implicit finite volume scheme based on a SIMPLE algorithm associated with the multiphase and cavitation model. The modified k-ɛ RNG turbulence model equipped with a modification of the turbulent viscosity was applied to overcome the turbulence closure problem. Numerical simulation of water flow over the hydrofoil equipped with the ACG shows that a low-pressure recirculation area is produced behind the ACG and artificially generates stationary cavitation bubbles. The location, shape, and size of this ACG are the crucial parameters in creating a proper control. Results show that the cavitation bubble is controlled well with a well-designed ACG.