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Sample records for 193nm immersion lithography

  1. Study of barrier coats for application in immersion 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Houlihan, Francis; Kim, Wookyu; Sakamuri, Raj; Hamilton, Keino; Dimerli, Alla; Abdallah, David; Romano, Andrew; Dammel, Ralph R.; Pawlowski, Georg; Raub, Alex; Brueck, Steve

    2005-05-01

    We will describe our barrier coat approach for use in immersion 193 nm lithography. These barrier coats may act as either simple barriers providing protection against loss of resist components into water or in the case of one type of these formulations which have a refractive index at 193 nm which is the geometric mean between that of the resist and water provide, also top antireflective properties. Either type of barrier coat can be applied with a simple spinning process compatible with PGMEA based resin employing standard solvents such as alcohols and be removed during the usual resist development process with aqueous 0.26 N TMAH. We will discuss both imaging results with these materials on acrylate type 193 nm resists and also show some fundamental studies we have done to understand the function of the barrier coat and the role of differing spinning solvents and resins. We will show LS (55 nm) and Contact Hole (80 nm) resolved with a 193 nm resist exposed with the interferometric tool at the University of New Mexico (213 nm) with and without the use of a barrier coat.

  2. 193nm immersion lithography for high-performance silicon photonic circuits

    NASA Astrophysics Data System (ADS)

    Selvaraja, Shankar K.; Winroth, Gustaf; Locorotondo, Sabrina; Murdoch, Gayle; Milenin, Alexey; Delvaux, Christie; Ong, Patrick; Pathak, Shibnath; Xie, Weiqiang; Sterckx, Gunther; Lepage, Guy; Van Thourhout, Dries; Bogaerts, Wim; Van Campenhout, Joris; Absil, Philippe

    2014-04-01

    Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of <1% is achieved for both isolated (waveguides) and dense (grating) patterns in silicon. In addition to dimensional control, low sidewall roughness is a crucial to achieve low scattering loss in the waveguides. With this platform, optical propagation loss as low as ~0.7 dB/cm is achieved for high-confinement single mode waveguides (450x220nm). This is an improvement of >20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line

  3. Low leaching and low LWR photoresist development for 193 nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ando, Nobuo; Lee, Youngjoon; Miyagawa, Takayuki; Edamatsu, Kunishige; Takemoto, Ichiki; Yamamoto, Satoshi; Tsuchida, Yoshinobu; Yamamoto, Keiko; Konishi, Shinji; Nakano, Katsushi; Tomoharu, Fujiwara

    2006-03-01

    receding contact angle become very important issue for not only defectivity but also scanner throughput. Some of our experimental results along this line of study are also included in the report. The last topic covered is LWR (Line Width Roughness) as an essential leverage for performance improvement, especially for the smaller CD that immersion lithography is aiming to define. Our recent effort to find effect and working concept to reduce LWR with low leaching materials is also described.

  4. A comparative study for mask defect tolerance on phase and transmission for dry and immersion 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Ling, Moh Lung; Chua, Gek Soon; Tay, Cho Jui; Quan, Chenggen; Lin, Qunying

    2007-03-01

    193nm immersion lithography has successfully enabled numerical aperture (NA) greater than 1.0 which allows rooms for improvement in resolution as well as depth of focus. In this study, critical dimension (CD) and depth of focus (DOF) performance for the 45nm technology node for dry and immersion lithography is compared using commercial available simulation tool. The study is based on one dimensional line and space pattern with pitch vary from 150 to 500nm. The effects of mask transmission and phase angle change on CD through pitch performance and DOF are also presented in this paper. Increase in mask transmission will result in increase of CD through pitch and reduction of DOF. When phase angle for the phase shift mask is less than 180 degree, CD through pitch and DOF drop. Finally, mask defects caused by haze on several locations which include MoSi lines, line edges, and space between line ends are simulated. The influence of these defects on CD and the potential line end bridging problem is presented.

  5. Determination of complex index of immersion liquids at 193 nm

    NASA Astrophysics Data System (ADS)

    Stehle, Jean-Louis; Piel, Jean-Philippe; Campillo-Carreto, Jose

    2006-03-01

    The next nodes in immersion lithography will require the scanners to use the 193 nm ArF* laser line with a very large numerical aperture and a liquid between the optics and the resist. (1) Immersion lithography at 193 nm requests very specific parameters for the fluid. The first generation is using the deionized Water (DIW) very pure and not recycled, but when a new optical material for the last lens will be available with a refractive index (RI) larger than 1.85, a higher refractive index fluid could be used, enabling second and maybe third generation of immersion lithography at 193 nm. So the 45 and maybe the 32 nm nodes could be covered with this high Index fluids (HIF).

  6. Carbon dioxide gas purification and analytical measurement for leading edge 193nm lithography

    NASA Astrophysics Data System (ADS)

    Riddle Vogt, Sarah; Landoni, Cristian; Applegarth, Chuck; Browning, Matt; Succi, Marco; Pirola, Simona; Macchi, Giorgio

    2015-03-01

    The use of purified carbon dioxide (CO2) has become a reality for leading edge 193 nm immersion lithography scanners. Traditionally, both dry and immersion 193 nm lithographic processes have constantly purged the optics stack with ultrahigh purity compressed dry air (UHPCDA). CO2 has been utilized for a similar purpose as UHPCDA. Airborne molecular contamniation (AMC) purification technologies and analytical measurement methods have been extensively developed to support the Lithography Tool Manufacturers purity requirements. This paper covers the analytical tests and characterizations carried out to assess impurity removal from 3.0 N CO2 (beverage grade) for its final utilization in 193 nm and EUV scanners.

  7. Alternatives to chemical amplification for 193nm lithography

    NASA Astrophysics Data System (ADS)

    Baylav, Burak; Zhao, Meng; Yin, Ran; Xie, Peng; Scholz, Chris; Smith, Bruce; Smith, Thomas; Zimmerman, Paul

    2010-04-01

    Research has been conducted to develop alternatives to chemically amplified 193 nm photoresist materials that will be able to achieve the requirements associated with sub-32 nm device technology. New as well as older photoresist design concepts for non-chemically amplified 193 nm photoresists that have the potential to enable improvements in line edge roughness while maintaining adequate sensitivity, base solubility, and dry etch resistance for high volume manufacturing are being explored. The particular platforms that have been explored in this work include dissolution inhibitor photoresist systems, chain scissioning polymers, and photoresist systems based on polymers incorporating formyloxyphenyl functional groups. In studies of two-component acidic polymer/dissolution inhibitor systems, it was found that compositions using ortho-nitrobenzyl cholate (NBC) as the dissolution inhibitor and poly norbornene hexafluoro alcohol (PNBHFA) as the base resin are capable of printing 90 nm dense line/space patterns upon exposure to a 193 nm laser. Studies of chain scission enhancement in methylmethacrylate copolymers showed that incorporating small amounts of absorptive a-cleavage monomers significantly enhanced sensitivity with an acceptable increase in absorbance at 193 nm. Specifically, it was found that adding 3 mol% of α-methyl styrene (α-MS) reduced the dose to clear of PMMA-based resist from 1400 mJ/cm2 to 420 mJ/cm2. Preliminary data are also presented on a direct photoreactive design concept based on the photo-Fries reaction of formyloxyphenyl functional groups in acrylic copolymers.

  8. A Comparison of Photoresist Resolution Metrics using 193 nm and EUV Lithography

    SciTech Connect

    Jones, Juanita; Pathak, Piyush; Wallow, Thomas; LaFontaine, Bruno; Deng, Yunfei; Kim, Ryoung-han; Kye, Jongwook; Levinson, Harry; Naulleau, Patrick; Anderson, Chris

    2007-08-20

    Image blur due to chemical amplification represents a fundamental limit to photoresist performance and manifests itself in many aspects of lithographic performance. Substantial progress has been made in linking image blur with simple resolution metrics using EUV lithography. In this presentation, they examine performance of 193 nm resist and EUV resist systems using modulation transfer function, corner rounding, and other resolution metrics. In particular, they focus on cross-comparisons in which selected EUV and 193 nm resist are evaluated using both EUV and 193 nm lithography. Simulation methods linking 193 nm and EUV performance will be described as well. Results from simulation indicate that image blur in current generation 193 nm photoresists is comparable to that of many EUV resists, but that ultra-low diffusion materials designs used in very high resolution EUV resists can result in substantially lower blur. In addition to detailing correlations between EUV and 193 nm experimental methods, they discuss their utility in assessing performance needs of future generation photoresists.

  9. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  10. Chemical trimming overcoat: an enhancing composition and process for 193nm lithography

    NASA Astrophysics Data System (ADS)

    Liu, Cong; Rowell, Kevin; Joesten, Lori; Baranowski, Paul; Kaur, Irvinder; Huang, Wanyi; Leonard, JoAnne; Jeong, Hae-Mi; Im, Kwang-Hwyi; Estelle, Tom; Cutler, Charlotte; Pohlers, Gerd; Yin, Wenyan; Fallon, Patricia; Li, Mingqi; Jeon, Hyun; Xu, Cheng Bai; Trefonas, Pete

    2016-03-01

    As the critical dimension of devices is approaching the resolution limit of 193nm photo lithography, multiple patterning processes have been developed to print smaller CD and pitch. Multiple patterning and other advanced lithographic processes often require the formation of isolated features such as lines or posts by direct lithographic printing. The formation of isolated features with an acceptable process window, however, can pose a challenge as a result of poor aerial image contrast at defocus. Herein we report a novel Chemical Trimming Overcoat (CTO) as an extra step after lithography that allows us to achieve smaller feature size and better process window.

  11. Front-end-of-line process development using 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan K.; Ercken, Monique; Eliat, Astrid; Delvaux, Christie; Jaenen, Patrick; Ronse, Kurt G.

    2001-04-01

    It is expected that 193nm lithography will be introduced in front-end-of-line processing for all critical layers at the 100nm node, and possibly also for some layers at the 130nm node, where critical layers are required to have the lowest mask cost. These processes are currently being investigated at IMEC for CMOS logic applications. While the lithographic performance of 193 nm resists has improved significantly in the last year, most materials still have important processing issues that need further improvement. On one hand, the resists material itself suffers from for example poor dry etch resistance and SEM CD shrinkage. On the other hand, interaction with other materials such as SiON inorganic ARCs becomes more challenging in terms of footing behavior, adhesion, and line edge roughness. In this paper, the 193nm processing experience gained at IMEC will be outlined, as well as solutions for manufacturability. Front- end-of-line integration results will also be shown, mainly for gate applications. It will be demonstrated that currently several commercial resist are capable of printing 130nm gates within the +/- 10 percent CD tolerance, even after gate etch. The impact of line edge roughness will also be discussed. Finally, the feasibility of printing 100nm logic patterns using only binary masks has been demonstrated, including gate etch.

  12. Inspection of advanced computational lithography logic reticles using a 193-nm inspection system

    NASA Astrophysics Data System (ADS)

    Yu, Ching-Fang; Lin, Mei-Chun; Lai, Mei-Tsu; Hsu, Luke T. H.; Chin, Angus; Lee, S. C.; Yen, Anthony; Wang, Jim; Chen, Ellison; Wu, David; Broadbent, William H.; Huang, William; Zhu, Zinggang

    2010-09-01

    We report inspection results of early 22-nm logic reticles designed with both conventional and computational lithography methods. Inspection is performed using a state-of-the-art 193-nm reticle inspection system in the reticleplane inspection mode (RPI) where both rule-based sensitivity control (RSC) and a newer modelbased sensitivity control (MSC) method are tested. The evaluation includes defect detection performance using several special test reticles designed with both conventional and computational lithography methods; the reticles contain a variety of programmed critical defects which are measured based on wafer print impact. Also included are inspection results from several full-field product reticles designed with both conventional and computational lithography methods to determine if low nuisance-defect counts can be achieved. These early reticles are largely single-die and all inspections are performed in the die-to-database inspection mode only.

  13. Extending photo-patternable low-κ concept to 193nm lithography and e-beam lithography

    NASA Astrophysics Data System (ADS)

    Lin, Qinghuang; Nelson, A.; Bozano, L.; Brock, P.; Cohen, S.; Davis, B.; Kwong, R.; Liniger, E.; Neumayer, D.; Rathore, J. S.; Shobha, H.; Sooriyakumaran, R.; Purushothaman, S.; Miller, R.; Allen, R.; Spooner, T.; Wisnieff, R.

    2011-04-01

    Increasing complexity and manufacturing costs, along with the fundamental limits of planar CMOS devices, threaten to slow down the historical pace of progress in the semiconductor industry. We have proposed and demonstrated proof-of-concept of a simple and low-cost way to fabricate dual-damascene copper (Cu) on-chip interconnect or Back-End-Of-the- Line (BEOL) structures using a novel multifunctional on-chip electrical insulator called a photo-patternable low dielectric constant (low-κ) dielectric (PPLK) material [Q. Lin, et al, Proc. SPIE, 2010]. This demonstration was accomplished with a silsesquioxane-based (SiCOH), κ=2.7 material which is compatible with 248 nm optical lithography. In this paper, we report on the extension of the photo-patternable low-κ concept to the ultra-low-κ (κ<2.5) regime and resolution down well below 100 nm with 193 nm lithography as well as e-beam lithography. We have accomplished this demonstration using the same silsesquioxane-based (SiCOH) material platform as that of the 248 nm photo-patternable low-κ materials. The 193 nm photo-patternable low-κ materials possess dielectric constants below 2.5 and are able to resolve 100 nm half-pith line/space features with dry 193 nm single exposure lithography. The resolution of photopatternable low-κ materials can be pushed down to 40 nm half-pith line and space features with a line-edge-roughness less than 3.0 nm with e-beam lithography.

  14. Next-generation 193-nm laser for sub-100-nm lithography

    NASA Astrophysics Data System (ADS)

    Duffey, Thomas P.; Blumenstock, Gerry M.; Fleurov, Vladimir B.; Pan, Xiaojiang; Newman, Peter C.; Glatzel, Holger; Watson, Tom A.; Erxmeyer, J.; Kuschnereit, Ralf; Weigl, Bernhard

    2001-09-01

    The next generation 193 nm (ArF) laser has been designed and developed for high-volume production lithography. The NanoLithTM 7000, offering 20 Watts average output power at 4 kHz repetition rates is designed to support the highest exposure tool scan speeds for maximum productivity and wafer throughput. Fundamental design changes made to the laser core technologies are described. These advancements in core technology support the delivery of highly line-narrowed light with lithography, meeting specifications for bandwidth, dose stability (+/- 0.3% in 20 ms window) and wavelength stability (+/- 0.05 pm average line center error in 20 ms window) across 2 - 4 kHz repetition rates. Improvements in optical materials and coatings have led to increased lifetime of optics modules. Optimization of the discharge electrode design has increased chamber lifetime. Early life-testing indicates that the NanoLithTM core technologies have the potential for 400% reduction of cost of consumables as compared to its predecessor, the ELX-5000A and has been discussed elsewhere.

  15. Extremely long life and low-cost 193nm excimer laser chamber technology for 450mm wafer multipatterning lithography

    NASA Astrophysics Data System (ADS)

    Tsushima, Hiroaki; Katsuumi, Hisakazu; Ikeda, Hiroyuki; Asayama, Takeshi; Kumazaki, Takahito; Kurosu, Akihiko; Ohta, Takeshi; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2014-04-01

    193nm ArF excimer lasers are widely used as light sources for the lithography process of semiconductor production. 193nm ArF exicmer lasers are expected to continue to be the main solution in photolithography, since advanced lithography technologies such as multiple patterning and Self-Aligned Double Patterning (SADP) are being developed. In order to apply these technologies to high-volume semiconductor manufacturing, the key is to reduce the total operating cost. To reduce the total operating cost, life extension of consumable part and reduction of power consumption are an important factor. The chamber life time and power consumption are a main factor to decide the total operating cost. Therefore, we have developed the new technology for extension of the chamber life time and low electricity consumption. In this paper, we will report the new technology to extend the life time of the laser chamber and to reduce the electricity consumption.

  16. Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning

    NASA Astrophysics Data System (ADS)

    Chiu, M. C.; Lin, Benjamin Szu-Min; Tsai, M. F.; Chang, Y. S.; Yeh, M. H.; Ying, T. H.; Ngai, Chris; Jin, Jaklyn; Yuen, Stephen; Huang, Sem; Chen, Yongmei; Miao, Liyan; Tai, Kevin; Conley, Amiad; Liu, Ian

    2008-11-01

    High NA (1.35) Immersion litho runs into the fundamental limit of printing at 40-45nm half pitch (HP). The next generation EUVL tool is known to be ready not until year 2012. Double patterning (DP) technology has been identified as the extension of optical photolithography technologies to 3xnm and 2xnm half-pitch for the low k1 regime to fill in the gap between Immersion lithography and EUVL. Self Aligned Double Patterning (SADP) Technology utilized mature process technology to reduce risk and faster time to market to support the continuation of Moore's Law of Scaling to reduce the cost/function. SADP uses spacer to do the pitch splitting bypass the conventional double patterning (e.g. Litho-Freeze-Litho-Etch (LFLE), or Litho-Etch-Litho-Etch (LELE)) overlay problem. Having a tight overlay performance is extremely critical for NAND Flash manufacturers to achieve a fast yield ramp in production. This paper describes the challenges and accomplishment of a Line-By-Spacer (LBS) SADP scheme to pattern the 29nm half-pitch NAND Flash STI application. A 193nm Dry lithography was chosen to pattern on top of the amorphous carbon (a-C) film stack. The resist pattern will be transferred on the top a-C core layer follow by spacer deposition and etch to achieve the pitch splitting. Then the spacer will be used to transfer to the bottom a-C universal hardmask. This high selectivity a-C hardmask will be used to transfer the 29nm half-pitch pattern to the STI. Good within wafer CD uniformity (CDU) <2nm and line width roughness (LWR) <2nm for the 29nm half-pitch NAND FLASH STI were demonstrated as the benefits using double amorphous carbon hardmask layers. The relationships among the photoresist CDs, CD trimming , as-deposited spacer film thickness, spacer width and the final STI line/core space/gap space CDs will also be discussed in this paper since patterning is combining both lithography performance with CVD and Etch process performance. Film selection for amorphous carbon and

  17. AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography

    NASA Astrophysics Data System (ADS)

    Noelscher, Christoph; Henkel, Thomas; Jauzion-Graverolle, Franck; Hennig, Mario; Morgana, Nicolo; Schlief, Ralph; Moukara, Molela; Koehle, Roderick; Neubauer, Ralf

    2008-03-01

    To avoid expensive immersion lithography and to further use existing dry tools for critical contact layer lithography at 4Xnm DRAM nodes the application of altPSM is investigated and compared to attPSM. Simulations and experiments with several test masks showed that by use of altPSM with suitable 0°/180° coloring and assist placement 30nm smaller contacts can be resolved through pitch with sufficient process windows (PW). This holds for arrays of contacts with variable lengths through short and long side pitches. A further benefit is the lower mask error enhancement factor (MEEF). Nevertheless 3D mask errors (ME) consume benefits in the PW and the assist placement and coloring of the main features (MF) put some constraints on the chip design. An altPSM compatible 4Xnm full-chip layout was realized without loss of chip area. Mask making showed very convincing results with respect to CDU, etch depth uniformity and defectiveness. The printed intra-field CD uniformity was comparable to attPSM despite the smaller target CDs. Room for improvement is identified in OPC accuracy and in automatic assist placement and sizing.

  18. Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

    SciTech Connect

    Rao, V.; Hutchinson, J.; Holl, S.; Langston, J.; Henderson, C.; Wheeler, D.R.; Cardinale, G.; OConnell, D.; Goldsmith, J.; Bohland, J.; Taylor, G.; Sinta, R.

    1998-11-01

    The maturity and acceptance of top surface imaging (TSI) technology have been hampered by several factors including inadequate resist sensitivity and line edge roughness. We have found that the use of a chemically amplified resist can improve the sensitivity in these systems by 1.5{endash} 2{times} without compromising the line edge roughness. In addition, we have shown improved line edge roughness by increasing the molecular weight of the polymeric resin in the resist. Using these materials approaches, we have been able to show excellent resolution images with the TSI process for both 193 nm and extreme ultraviolet (13.4 nm) patterning. {copyright} {ital 1998 American Vacuum Society.}

  19. Double-exposure materials for pitch division with 193nm lithography: requirements, results

    NASA Astrophysics Data System (ADS)

    Bristol, Robert; Shykind, David; Kim, Sungwon; Borodovsky, Yan; Schwartz, Evan; Turner, Courtney; Masson, Georgeta; Min, Ke; Esswein, Katherine; Blackwell, James M.; Suetin, Nikolay

    2009-03-01

    We present the results of both theoretical and experimental investigations of materials for application either as a reversible Contrast Enhancement Layer (rCEL) or a Two-Stage PAG. The purpose of these materials is to enable Litho- Litho-Etch (LLE) patterning for Pitch Division (PD) at the 16nm logic node (2013 Manufacturing). For the rCEL, we find from modeling using an E-M solver that such a material must posses a bleaching capability equivalent to a Dill A parameter of greater than 100. This is at least a factor of ten greater than that achieved so far at 193nm by any usable organic material we have tested. In the case of the Two-Stage PAG, analytical and lithographic modeling yields a usable material process window, in terms of reversibility and two-photon vs. one-photon acid production rates (branching ratio). One class of materials, based on the cycloadduct of a tethered pair of anthracenes, has shown promise under testing at 193nm in acetonitrile. Sufficient reversibility without acid production, enabled by near-UV exposure, has been achieved. Acid production as a function of dose shows a clear quadratic component, consistent with a branching ratio greater than 1. The experimental data also supports a acid contrast value of approximately 0.05 that could in principle be obtained with this molecule under a pitch division double-exposure scenario.

  20. Minimizing wafer defectivity during high-temperature baking of organic films in 193nm lithography

    NASA Astrophysics Data System (ADS)

    Randall, Mai; Longstaff, Christopher; Ueda, Kenichi; Nicholson, Jim; Winter, Thomas

    2006-03-01

    Demands for continued defect reduction in 300mm IC manufacturing is driving process engineers to examine all aspects of the apply process for improvement. Process engineers, and their respective tool sets, are required to process films at temperatures above the boiling point of the casting solvents. This can potentially lead to the sublimation of the film chemical components. The current methods used to minimize wafer defectivity due to bake residues include frequent cleaning of bake plate modules and surrounding equipment, process optimization, and hardware improvements until more robust chemistries are available. IBM has evaluated the Tokyo Electron CLEAN TRACK TM ACT TM 12 high exhaust high temperature hotplate (HHP) lid to minimize wafer level contamination due to the outgasing of a bottom anti-reflective coating (BARC) films during the high temperature bake process. Goal was to minimize airborne contamination (particles in free space), reduce hotplate contamination build up, and ultimately reduce defects on the wafer. This evaluation was performed on a 193nm BARC material. Evaluation data included visual hardware inspections, airborne particle counting, relative thickness build up measurements on hotplate lids, wafer level defect measurements, and electrical open fail rate. Film coat thickness mean and uniformity were also checked to compare the high exhaust HHP with the standard HHP lid. Chemical analysis of the HHP module residue was performed to identify the source material. The work will quantify potential cost savings achieved by reducing added wafer defects during processing and extending PM frequency for equipment cleaning.

  1. Development of high-performance negative-tone resists for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Hattori, Takashi; Yokoyama, Yoshiyuki; Kimura, Kaori; Yamanaka, Ryoko; Tanaka, Toshihiko; Fukuda, Hiroshi

    2003-06-01

    We have been developing negative-tone resist systems utilizing an acid-catalyzed intramolecular esterification of γ- and δ-hydroxy acid for ArF phase-shifting lithography. In this paper, α-acryloyloxy-β, β-dimethyl-γ-butyrolactone (DBLA), adamantane lactone acrylate (AdLA), and norbornene lactone acrylate (NLA) were examined as a precursor of hydroxy acid. It was found that AdLA and NLA are not hydrolyzed intro hydroxy acid under an alkali hydrolysis condition. DBLA was found to produce γ-hydroxy acid, which is stable in the resist solution. The γ-hydroxy acid derived from DBLA becomes γ-lactone relatively easily by an acid-catalyzed reaction and can be used to make resists insoluble. Since the variation and the flexibility of the copolymer composition of the base polymer can be increased, the resist properties are controllable and the pattern quality can be improved by utilizing γ-hydroxy acid derived from DBLA.

  2. High-n immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Cortie, Rogier; Meijers, Ralph; Evangelista, Fabrizio; Samarakone, Nandarisi

    2008-03-01

    A two-year study on the feasibility of High-n Immersion Lithography shows very promising results. This paper reports the findings of the study. The evaluation shows the tremendous progress made in the development of second-generation immersion fluid technology. Candidate fluids from several suppliers have been evaluated. All the commercial fluids evaluated are viable, so there are a number of options. Life tests have been conducted on bench top fluid-handling systems and the results referenced to full-scale systems. Parameters such as Dose per Laser Pulse, Pulse Rate, Fluid Flow Rate, and Fluid Absorbency at 193nm, and Oxygen/Air Contamination Levels were explored. A detailed evaluation of phenomena such as Last Lens Element (LLE) contamination has been conducted. Lens cleaning has been evaluated. A comparison of High-n fluid-based technology and water-based immersion technology shows interesting advantages of High-n fluid in the areas of Defect and Resist Interaction. Droplet Drying tests, Resist Staining evaluations, and Resist Contrast impact studies have all been run. Defect-generating mechanisms have been identified and are being eliminated. The lower evaporation rate of the High-n fluids compared with water shows the advantages of High-n Immersion. The core issue for the technology, the availability of High-n optical material for use as the final lens element, is updated. Samples of LuAG material have been received from development partners and have been evaluated. The latest status of optical materials and the technology timelines are reported. The potential impact of the availability of the technology is discussed. Synergy with technologies such as Double Patterning is discussed. The prospects for <22nm (hp) are evaluated.

  3. A thick CESL stressed ultra-small (Lg=40-nm) SiGe-channel MOSFET fabricated with 193-nm scanner lithography and TEOS hard mask etching

    NASA Astrophysics Data System (ADS)

    Liao, Wen-Shiang; Chen, Tung-Hung; Lin, Hsin-Hung; Chang, Wen-Tung; Shih, Tommy; Tsen, Huan-Chiu; Chung, Lee

    2007-03-01

    A 100Å-thick SiGe (22.5%) channel MOSFET with gate length down to 40nm has been successfully integrated with 14Å nitrided gate oxide as well as a 1200Å high-compressive PECVD ILD-SiNx stressing layer as the contact etching stop layer (CESL) that enhances the PMOS electron mobility with +33% current gain. To achieve a poly-Si gate length target of 400Å (40nm), a 193nm scanner lithography and an aggressive oxide hard mask etching techniques were used. First, a 500Å-thick TEOS hard mask layer was deposited upon the 1500Å-thick poly-Si gate electrode. Second, both 1050Å-thick bottom anti-reflective coating (BARC) and 2650Å-thick photoresist (P/R) were coated and a 193nm scanner lithography tool was used for the gate layout patterning with nominal logic 90nm exposure energy. Then, a deep sub-micron plasma etcher was used for an aggressive P/R and BARC trimming down processing and the TEOS hard mask was subsequently plasma etched in another etching chamber without breaking the plasma etcher's vacuum. Continuously, the P/R and BARC were removed with a plasma ashing and RCA cleaning. Moreover, the patterned Si-fin capping oxide can be further trimmed down with a diluted HF (aq) solution (DHF) while rendering the RCA cleaning process and the remained TEOS hard mask is still thick enough for the subsequent poly-Si gate main etching. Finally, an ultra narrow poly-Si gate length of 40nm with promising PMOS drive current enhancement can be formed through a second poly-Si etching, which is above the underneath SiGe (22.5%) conduction channel as well as its upper 14Å-thick nitrided gate oxide.

  4. Immersion lithography bevel solutions

    NASA Astrophysics Data System (ADS)

    Tedeschi, Len; Tamada, Osamu; Sanada, Masakazu; Yasuda, Shuichi; Asai, Masaya

    2008-03-01

    The introduction of Immersion lithography, combined with the desire to maximize the number of potential yielding devices per wafer, has brought wafer edge engineering to the forefront for advanced semiconductor manufactures. Bevel cleanliness, the position accuracy of the lithography films, and quality of the EBR cut has become more critical. In this paper, the effectiveness of wafer track based solutions to enable state-of-art bevel schemes is explored. This includes an integrated bevel cleaner and new bevel rinse nozzles. The bevel rinse nozzles are used in the coating process to ensure a precise, clean film edge on or near the bevel. The bevel cleaner is used immediately before the wafer is loaded into the scanner after the coating process. The bevel cleaner shows promise in driving down defectivity levels, specifically printing particles, while not damaging films on the bevel.

  5. Novel spin-coating technology for 248-nm/193-nm DUV lithography and low-k spin on dielectrics of 200-mm/300-mm wafers

    NASA Astrophysics Data System (ADS)

    Gurer, Emir; Zhong, Tom X.; Lewellen, John W.; Lee, Ed C.

    2000-06-01

    An alternative coating technology was developed for 248 nm/193 nm DUV lithography and low-k spin on dielectric (SOD) materials used in the interconnect area. This is a 300 mm enabling technology which overcomes turbulent flow limitations above 2000 rpm and it prevents 40 - 60% reduction on the process latitudes of evaporation-related variables, common to 300 mm conventional coaters. Our new coating technology is fully enclosed and it is capable of controlling the solvent concentration above the resist film dynamically in the gas phase. This feature allows a direct control of the evaporation mass transfer which determines the quality of the final resist profiles. Following process advantages are reported in this paper: (1) Demonstrated that final resist film thickness can be routinely varied by 4000 angstrom at a fixed drying spin speed, thus minimizing the impact of turbulence wall for 300 mm wafers. (2) Evaporation control allows wider range of useful thickness from a fixed viscosity material. (3) Latitudes of evaporation-related process variables is about 40% larger than that of a conventional coater. (4) Highly uniform films of 0.05% were obtained for 8800 angstrom target thickness with tighter wafer-wafer profile control because of the enclosed nature of the technology. (5) Dynamic evaporation control facilitates resist consumption minimization. Preliminary results indicate feasibility of a 0.4 cc process of record (POR) for a 200 mm substrate. (6) Lower COO due to demonstrated relative insensitivity to environmental variables, robust resist consumption minimization and superior process capabilities. (7) Improved planarization and gap fill properties for the new generation photoresist/low-k SOD materials deposited using this enclosed coating technology.

  6. Defectivity reduction studies for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Matsunaga, Kentaro; Kondoh, Takehiro; Kato, Hirokazu; Kobayashi, Yuuji; Hayasaki, Kei; Ito, Shinichi; Yoshida, Akira; Shimura, Satoru; Kawasaki, Tetsu; Kyoda, Hideharu

    2007-03-01

    Immersion lithography is widely expected to meet the manufacturing requirements of future device nodes. A critical development in immersion lithography has been the construction of a defect-free process. Two years ago, the authors evaluated the impact of water droplets made experimentally on exposed resist films and /or topcoat. (1) The results showed that the marks of drying water droplet called watermarks became pattern defects with T-top profile. In the case that water droplets were removed by drying them, formation of the defects was prevented. Post-exposure rinse process to remove water droplets also prevented formation of the defects. In the present work, the authors evaluated the effect of pre- and post-exposure rinse processes on hp 55nm line and space pattern with Spin Rinse Process Station (SRS) and Post Immersion Rinse Process Station (PIR) modules on an inline lithography cluster with the Tokyo Electron Ltd. CLEAN TRACK TM LITHIUS TM i+ and ASML TWINSCAN XT:1700Fi , 193nm immersion scanner. It was found that total defectivity is decreased by pre- and post-exposure rinse. In particular, bridge defects and large bridge defects were decreased by pre- and post-exposure rinse. Pre- and post-exposure rinse processes are very effective to reduce the bridge and large bridge defects of immersion lithography.

  7. Negative-tone 193-nm resists

    NASA Astrophysics Data System (ADS)

    Cho, Sungseo; Vander Heyden, Anthony; Byers, Jeff D.; Willson, C. Grant

    2000-06-01

    A great deal of progress has been made in the design of single layer positive tone resists for 193 nm lithography. Commercial samples of such materials are now available from many vendors. The patterning of certain levels of devices profits from the use of negative tone resists. There have been several reports of work directed toward the design of negative tones resists for 193 nm exposure but, none have performed as well as the positive tone systems. Polymers with alicyclic structures in the backbone have emerged as excellent platforms from which to design positive tone resists for 193 nm exposure. We now report the adaptation of this class of polymers to the design of high performance negative tone 193 nm resists. New systems have been prepared that are based on a polarity switch mechanism for modulation of the dissolution rate. The systems are based on a polar, alicyclic polymer backbone that includes a monomer bearing a glycol pendant group that undergoes the acid catalyzed pinacol rearrangement upon exposure and bake to produce the corresponding less polar ketone. This monomer was copolymerized with maleic anhydride and a norbornene bearing a bis-trifluoromethylcarbinol. The rearrangement of the copolymer was monitored by FT-IR as a function of temperature. The synthesis of the norbornene monomers will be presented together with characterization of copolymers of these monomers with maleic anhydride. The lithographic performance of the new resist system will also be presented.

  8. Solvent Immersion Imprint Lithography

    SciTech Connect

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  9. Material design for immersion lithography with high refractive index fluid (HIF)

    NASA Astrophysics Data System (ADS)

    Miyamatsu, Takashi; Wang, Yong; Shima, Motoyuki; Kusumoto, Shiro; Chiba, Takashi; Nakagawa, Hiroki; Hieda, Katsuhiko; Shimokawa, Tsutomu

    2005-05-01

    ArF immersion lithography is considered as the most promising next generation technology which enables to a 45 nm node device manufacturing and below. Not only depth of focus enlargement, immersion lithography enables to use hyper numerical aperture (NA) larger than 1.0 and achieve higher resolution capability. For 193nm lithography, water is an ideal immersion fluid, providing suitable refractive index and transmission properties. Furthermore the higher refractive index fluid is expected to provide a potential extension of optical lithography to the 32 nm node. This paper describes the material design for immersion lithography with high refractive index fluid. We have developed promising high refractive index fluids which satisfy the requirement for immersion fluid by screening wide variety of organic compounds. The physical and chemical properties of this high refractive index fluid are discussed in detail. Also the topcoat material which has good matching with high refractive index fluid is developed. While this topcoat material is soluble into aqueous TMAH developer, it does not dissolve into water or high refractive index fluid and gives suitable contact angle for immersion scan exposure. Immersion exposure experiments using high refractive index fluid with and w/o topcoat material was carried out and its lithographic performance is presented in this paper.

  10. Point-of-use filtration strategy for negative tone developer in extended immersion and extreme-ultraviolet (EUV) lithography

    NASA Astrophysics Data System (ADS)

    D'Urzo, L.; Foubert, P.; Stokes, H.; Thouroude, Y.; Xia, A.; Wu, Aiwen

    2015-03-01

    Negative tone development (NTD) has dramatically gained popularity in 193 nm dry and immersion lithography, due to their superior imaging performance [1, 2 and 3]. Popular negative tone developers are organic solvents such as n- butyl acetate (n-BA), aliphatic ketones, or high-density alcohols such as Methyl Isobutyl Carbinol (MIBC). In this work, a comparative study between ultra-high molecular weight polyethylene (UPE) and polytetrafluoroethylene (PTFE) POU filtration for n-BA based NTD has been carried out. Results correlate with the occurrence or the mitigation of micro bridges in a 45 nm dense line pattern created through immersion lithography as a function of POU membrane.

  11. Immersion defectivity study with volume production immersion lithography tool

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Kato, Hiroshi; Fujiwara, Tomoharu; Shiraishi, K.; Iriuchijima, Yasuhiro; Owa, Soichi; Malik, Irfan; Woodman, Steve; Terala, Prasad; Pelissier, Christine; Zhang, Haiping

    2007-03-01

    ArF immersion lithography has become accepted as the critical layer patterning solution for lithography going forward. Volume production of 55 nm devices using immersion lithography has begun. One of the key issues for the success of volume production immersion lithography is the control of immersion defectivity. Because the defectivity is influenced by the exposure tool, track, materials, and the wafer environment, a broad range of analysis and optimization is needed to minimize defect levels. Defect tests were performed using a dedicated immersion cluster consisting of a volume production immersion exposure tool, Nikon NSR-S609B, having NA of 1.07, and a resist coater-developer, TEL LITHIUS i+. Miniaturization of feature size by immersion lithography requires higher sensitivity defect inspection. In this paper, first we demonstrate the high sensitivity defect measurement using a next generation wafer inspection system, KLA-Tencor 2800 and Surfscan SP2, on both patterned and non-patterned wafers. Long-term defect stability is very important from the viewpoint of device mass production. Secondly, we present long-term defectivity data using a topcoat-less process. For tool and process qualification, a simple monitor method is required. Simple, non-pattern immersion scanned wafer measurement has been proposed elsewhere, but the correlation between such a non-pattern defect and pattern defect must be confirmed. In this paper, using a topcoat process, the correlation between topcoat defects and pattern defects is analyzed using the defect source analysis (DSA) method. In case of accidental tool contamination, a cleaning process should be established. Liquid cleaning is suitable because it can be easily introduced through the immersion nozzle. An in-situ tool cleaning method is introduced. A broad range of optimization of tools, materials, and processes provide convincing evidence that immersion lithography is ready for volume production chip manufacturing.

  12. A temperature control algorithm of immersion liquid for immersion lithography

    NASA Astrophysics Data System (ADS)

    He, Junwei; Li, Xiaoping; Lei, Min; Chen, Bing; Wang, Jinchun

    2014-03-01

    Immersion lithography is one of the main technologies used to manufacture integrated circuits with the shortest feature size. In immersion lithography, temperature of immersion liquid is strictly constrained and its allowable range is less than +/-0.01°C at 22°C. To meet this requirement, a temperature control algorithm adopted by the test rig which controls the temperature of the immersion liquid with process cooling water (PCW) via heat exchangers is proposed. By adjusting the flow rate of PCW through the heat exchangers, the control system varies the amount of heat exchanged, and the temperature of the immersion liquid can be properly controlled. The temperature control rig is a multi-disturbed, timevariant, non-linear and time-delayed system and its transfer function varies with the inlet temperature and flow rates of the streams through the heat exchangers. Considering the characteristics of the system, a cascade-connected fuzzy PID feedback algorithm is designed.

  13. Self-segregating materials for immersion lithography

    NASA Astrophysics Data System (ADS)

    Sanders, Daniel P.; Sundberg, Linda K.; Brock, Phillip J.; Ito, Hiroshi; Truong, Hoa D.; Allen, Robert D.; McIntyre, Gregory R.; Goldfarb, Dario L.

    2008-03-01

    In this paper, we employ the self-segregating materials approach used in topcoat-free resists for water immersion lithography to extend the performance of topcoat materials for water immersion and to increase the contact angles of organic fluids on topcoat-free resists for high index immersion lithography. By tailoring polymers that segregate to the air and resist interfaces of the topcoat, high contact angle topcoats with relatively low fluorine content are achieved. While graded topcoats may extend the performance and/or reduce the cost of topcoat materials, the large amount of unprotected acidic groups necessary for TMAH development prevent them from achieving the high contact angles and low hysteresis exhibited by topcoat-free resists. Another application of this self-segregating approach is tailoring resist surfaces for high index immersion. Due to the low surface tension and higher viscosities of organic fluids relative to water and their lower contact angles on most surfaces, film pulling cannot be prevented without dramatically reducing wafer scan rates; however, tuning the surface energy of the resist may be important to control stain morphology and facilitate fluid removal from the wafer. By tailoring fluoropolymer additives for high contact angles with second generation organic high index immersion fluids, we show herein that topcoat-free resists can be developed specifically for high index immersion lithography with good contact angles and lithographic imaging performance.

  14. Film stacking architecture for immersion lithography process

    NASA Astrophysics Data System (ADS)

    Goto, Tomohiro; Sanada, Masakazu; Miyagi, Tadashi; Shigemori, Kazuhito; Kanaoka, Masashi; Yasuda, Shuichi; Tamada, Osamu; Asai, Masaya

    2008-03-01

    In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This study used a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. This evaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge. Patterning defects were improved with suitable film stacking.

  15. High-refractive index material design for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Furukawa, Taiichi; Kishida, Takanori; Miyamatsu, Takashi; Kawaguchi, Kazuo; Yamada, Kinji; Tominaga, Tetsuo; Slezak, Mark; Hieda, Katsuhiko

    2007-03-01

    High-refractive-index fluids (HIFs) are being considered to replace water as the immersion fluid in next generation 193nm immersion scanner. At SPIE 2006, we have demonstrated the attractive optical properties and good imaging performance for our HIF candidates, HIL-001 and HIL-002. In this paper, we will describe our latest results on the remaining issues for the practical application of HIF candidates, as well as introduce 3 rd generation fluids for the further extension of ArF immersion lithography. In order to improve the fluid transparency, we have tried two approaches. One is the improvement of transparency for HIL-001 based on a refining technology and the other is to develop a novel HIF candidate by using computational chemistry, which is named HIL-203. By passing through a suitable refining unit, HIL-001 can reach a transmittance of >99%/mm, which is as high as water. This new purification method can be applied to an on-site reuse system. It was also found that the refining unit was very effective to eliminate the impurities coming from the photo-degradation of HIL, chemical substances contamination under the air exposure, and leaching of resist components such as photo-acid generator or quencher. We have developed a new fluid for 3 rd generation immersion fluids. It had a higher refractive index than that of HIL-001 or HIL-203; however, it still falls short of our target value. Additionally, by using a novel design concept, we have developed a top-coat with high refractive index for HIL immersion lithography, which gave an appropriate contact angle for scanning exposure.

  16. Immersion and 32nm lithography: now and future

    NASA Astrophysics Data System (ADS)

    Kameyama, Masaomi; McCallum, Martin

    2007-12-01

    The amazing growth of the semiconductor industry over the past decades has been supported, and in many cases driven, by miniaturization of devices. Behind this has been one strong backbone - lithography. In the 1970's, devices had geometries of several micrometers, but now we are about to enter 45nm device pre-production and shortly after move it into volume-production. Immersion lithography, although having a short development time, is already in production and will become the primary technology driver. What we need to do now is identify the solutions for 32nm lithography. There are several candidates for 32nm lithography, such as EUVL, High Index Immersion and Double Patterning / Double Exposure. Other more esoteric technologies such as nanoimprint and maskless lithography have also been mentioned. In this paper, the present status of Immersion lithography will be reviewed and each of the 32nm candidates are reviewed.

  17. New measuring technique of complex index of immersion liquids

    NASA Astrophysics Data System (ADS)

    Stehlé, Jean-Louis; Piel, Jean-Philippe; Campillo-Carreto, Jose

    2006-03-01

    The next nodes in immersion lithography will require to use the 193 nm laser line with very large numerical aperture and a liquid between the optics and the resist1. Immersion lithography at 193 nm requests very specific parameters for the fluid. The first generation will use the De-Ionized Water (DIW) very pure and not recycled, but when a new optical material for last lens will be available with a refractive index (RI) larger than 1.85, a higher refractive index fluid can be used, enabling second and maybe third generation of immersion lithography at 193 nm. So the 45 and maybe the 32 nm nodes could be covered with this High Index Fluids (HIF).

  18. Receding contact lines: From sliding drops to immersion lithography

    NASA Astrophysics Data System (ADS)

    Winkels, K. G.; Peters, I. R.; Evangelista, F.; Riepen, M.; Daerr, A.; Limat, L.; Snoeijer, J. H.

    2011-02-01

    Instabilities of receding contact lines often occur through the formation of a corner with a very sharp tip. These dewetting structures also appear in the technology of Immersion Lithography, where water is put between the lens and the silicon wafer to increase the optical resolution. In this paper we aim to compare corners appearing in Immersion Lithography to those at the tail of gravity driven-drops sliding down an incline. We use high speed recordings to measure the dynamic contact angle and the sharpness of the corner, for varying contact line velocity. It is found that these quantities behave very similarly for Immersion Lithography and drops on an incline. In addition, the results agree well with predictions by a lubrication model for cornered contact lines, hinting at a generic structure of dewetting corners.

  19. Photodissociation of Methyl Iodide at 193 NM

    NASA Astrophysics Data System (ADS)

    Xu, Hong; Pratt, Stephen

    2014-05-01

    A new measurement of the photodissociation of CH3I at 193 nm is reported in which we use a combination of vacuum ultraviolet photoionization and velocity map ion imaging. The iodine photofragments are probed by single-photon ionization at photon energies above and below the photoionization threshold of I(2P3/2) . The relative I(2P3/2) and I*(2P1/2) photoionization cross sections are determined at these wavelengths by using the known branching fractions for the photodissociation at 266 nm. Velocity map ion images indicate that the branching fraction for I(2P3/2) atoms is non-zero, and yield a value of 0.07 +/- 0.01. Interestingly, the translational energy distribution extracted from the image shows that the translational energy of the I(2P3/2) fragments is significantly smaller than that of the I*(2P1/2) atoms. This observation indicates the internal rotational/vibrational energy of the CH3 co-fragment is very high in the I(2P3/2) channel. The results can be interpreted in a manner consistent with the previous measurements, and provide a more complete picture of the dissociation dynamics of this prototypical molecule. This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences, and Biosciences under contract No. DE-AC02-06CH11357.

  20. Self-aligned double patterning process for 32/32nm contact/space and beyond using 193 immersion lithography

    NASA Astrophysics Data System (ADS)

    Mebarki, Bencherki; Miao, Liyan; Chen, Yongmei; Yu, James; Blanco, Pokhui; Makeeff, James; Shu, Jen; Bencher, Christopher; Naik, Mehul; Ngai, Christopher Sui Wing

    2010-04-01

    State of the art production single print lithography for contact is limited to ~43-44nm half-pitch given the parameters in the classic photolithography resolution formula for contacts in 193 immersion tool (k1 >= 0.3, NA = 1.35, and λ = 193nm). Single print lithography limitations can be overcome by (1) Process / Integration based techniques such as double-printing (DP), and spacer based self-aligned double patterning (SADP), (2) Non-standard printing techniques such as electron-beam (eBeam), extreme ultraviolet lithography (EUVL), nano-imprint Lithography (NIL). EUV tools are under development, while nanoimprint is a developmental tool only. Spacer based SADP for equal line/space is well documented as successful patterning technique for 3xnm and beyond. In this paper, we present an adaptation of selfaligned double patterning process to 2-D regular 32/32nm contact/space array. Using SADP process, we successfully achieved an equal contact/space of 32/32nm using 193 immersion lithography that is only capable of 43-44nm resolvable half-pitch contact printing. The key and unique innovation of this work is the use of a 2-D (x and y axis) pillar structure to achieve equal contact/space. Final result is a dense contact array of 32nm half-pitch in 2-D structure (x and y axis). This is achieved on simplified stack of Substrate / APF / Nitride. Further transfer of this new contact pattern from nitride to the substrate (e.g., Oxide, APF, Poly, Si...) is possible. The technique is potentially extendible to 22/22nm contact/space and beyond.

  1. EUV reticle inspection with a 193nm reticle inspector

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Inderhees, Gregg; Yamamoto, Tetsuya; Lee, Isaac; Lim, Phillip

    2013-06-01

    The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the 2015 - 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL into HVM - blank and reticle defects are among the top items. To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm wavelength reticle inspection system - the Teron 610 Series (2010). This system has become the industry standard for 22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV blank and reticle inspection in R and D. To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for currently available 14nm / 2xhp generation EUV reticles. As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify areas for further improvement with the goal to be ready for pilot lines in early 2015.

  2. 193-nm photoresist development at Union Chemical Labs., ITRI

    NASA Astrophysics Data System (ADS)

    Fang, Mao-Ching; Chang, Jui-Fa; Tai, Ming-Chia; Lin, Tzu-Yu; Liu, Ting-Chung; Liu, Chien-Hung

    2000-06-01

    Union Chemical Laboratories has designed and synthesized novel copolymers of norbornene-alt-derivatives, maleic anhydride and alicyclic acrylate for ArF excimer laser lithography. These polymers are prepared using a free-radical copolymerization process. Applying the resin for 193-nm single layer chemically amplified photoresist composed of cholate derivative with a PAG leads to a good resolution below 0.13 micrometer line/space patterns using an ArF stepper and 2.38 wt% tetramethylammonium hydroxide aqueous solution as a developer. Furthermore, alternating phase shift mask was used in combination with a feature size as small as 0.1 micrometer. To overcome post exposure delay (PED) effect caused by airborne contamination, three new base additives were used in the resist formulation. The etching-resist ability of resists by reaction ion etching (RIE) was showed better than conventional g-line and KrF excimer laser resists. Experimental results of CHF3/CF4 as etch gas, indicate that the etching rate selectivity with respect to SiO2 is about 0.5. The UCL photoresists also showed good shelf life stability.

  3. Directed self-assembly graphoepitaxy template generation with immersion lithography

    NASA Astrophysics Data System (ADS)

    Ma, Yuansheng; Lei, Junjiang; Andres Torres, J.; Hong, Le; Word, James; Fenger, Germain; Tritchkov, Alexander; Lippincott, George; Gupta, Rachit; Lafferty, Neal; He, Yuan; Bekaert, Joost; Vanderberghe, Geert

    2015-07-01

    We present an optimization methodology for the template designs of subresolution contacts using directed self-assembly (DSA) with graphoepitaxy and immersion lithography. We demonstrate the flow using a 60-nm-pitch contact design in doublet with Monte Carlo simulations for DSA. We introduce the notion of template error enhancement factor (TEEF) to gauge the sensitivity of DSA printing infidelity to template printing infidelity and evaluate optimized template designs with TEEF metrics. Our data show that source mask optimization and inverse lithography technology are critical to achieve sub-80 nm non-L0 pitches for DSA patterns using 193i.

  4. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography

    SciTech Connect

    Moore, Jayven S.; Xantheas, Sotiris S.; Grate, Jay W.; Wietsma, Thomas W.; Gratton, Enrico; Vasdekis, Andreas

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL’s impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 4-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL’s modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  5. Refractive index change during exposure for 193-nm chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Oh, Hye-Keun; Sohn, Young-Soo; Sung, Moon-Gyu; Lee, Young-Mi; Lee, Eun-Mi; Byun, Sung Hwan; An, Ilsin; Lee, Kun-Sang; Park, In-Ho

    1999-06-01

    Some of the important areas to be improved for lithography simulation are getting correct exposure parameters and determining the change of refractive index. It is known that the real and imaginary refractive indices are changed during exposure. We obtained these refractive index changes during exposure for 193 nm chemically amplified resists. The variations of the transmittance as well as the resist thickness were measured during ArF excimer laser exposure. We found that the refractive index change is directly related to the concentration of the photo acid generator and de-protected resin. It is important to know the exact values of acid concentration from the exposure parameters since a small difference in acid concentration magnifies the variation in the amplified de-protection during post exposure bake. We developed and used a method to extract Dill ABC exposure parameters for 193 nm chemically amplified resist from the refractive index change upon exposure.

  6. Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer.

    PubMed

    Jeong, Seok-Hwan; Shimura, Daisuke; Simoyama, Takasi; Seki, Miyoshi; Yokoyama, Nobuyuki; Ohtsuka, Minoru; Koshino, Keiji; Horikawa, Tsuyoshi; Tanaka, Yu; Morito, Ken

    2013-12-16

    We report superior spectral characteristics of silicon-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by 193-nm ArF-immersion lithography process on a 300-mm silicon-on-insulator wafer. We theoretically analyze spectral characteristics, considering random phase errors caused by micro fabrication process. It will be experimentally demonstrated that the fabricated devices exhibit a low excess loss of 0.4 ± 0.2 dB, a high out-of-band rejection ratio of >40dB, and a wide flatband width of ~2 nm. Furthermore, we evaluate manufacturing tolerances for intra-dies and inter-dies, comparing with the cases for 248-nm KrF-dry lithography process. It will be shown that the 193-nm ArF-immersion lithography process can provide much less excess phase errors of Si-nanowire waveguides, thus enabling to give better filter spectral characteristics. Finally, spectral superiorities will be reconfirmed by measuring 25 Gbps modulated signals launched into the fabricated device. Clear eye diagrams are observed when the wavelengths of modulated signals are stayed within almost passband of the 5th-order CROW.

  7. Inline detection of Chrome degradation on binary 193nm photomasks

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

    2013-09-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300

  8. 32 nm logic patterning options with immersion lithography

    NASA Astrophysics Data System (ADS)

    Lai, K.; Burns, S.; Halle, S.; Zhuang, L.; Colburn, M.; Allen, S.; Babcock, C.; Baum, Z.; Burkhardt, M.; Dai, V.; Dunn, D.; Geiss, E.; Haffner, H.; Han, G.; Lawson, P.; Mansfield, S.; Meiring, J.; Morgenfeld, B.; Tabery, C.; Zou, Y.; Sarma, C.; Tsou, L.; Yan, W.; Zhuang, H.; Gil, D.; Medeiros, D.

    2008-03-01

    The semiconductor industry faces a lithographic scaling limit as the industry completes the transition to 1.35 NA immersion lithography. Both high-index immersion lithography and EUV lithography are facing technical challenges and commercial timing issues. Consequently, the industry has focused on enabling double patterning technology (DPT) as a means to circumvent the limitations of Rayleigh scaling. Here, the IBM development alliance demonstrate a series of double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. These techniques have been successfully employed for early 32nm node development using 45nm generation tooling. Four different double patterning techniques were implemented. The first process illustrates local RET optimization through the use of a split reticle design. In this approach, a layout is decomposed into a series of regions with similar imaging properties and the illumination conditions for each are independently optimized. These regions are then printed separately into the same resist film in a multiple exposure process. The result is a singly developed pattern that could not be printed with a single illumination-mask combination. The second approach addresses 2D imaging with particular focus on both line-end dimension and linewidth control [1]. A double exposure-double etch (DE2) approach is used in conjunction with a pitch-filling sacrificial feature strategy. The third double exposure process, optimized for via patterns also utilizes DE2. In this method, a design is split between two separate masks such that the minimum pitch between any two vias is larger than the minimum metal pitch. This allows for final structures with vias at pitches beyond the capability of a single exposure. In the fourth method,, dark field double dipole lithography (DDL) has been successfully applied to BEOL metal structures and has been shown to be

  9. Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring

    NASA Astrophysics Data System (ADS)

    Jones, Chris M.; Kallingal, Chidam; Zawadzki, Mary T.; Jeewakhan, Nazneen N.; Kaviani, Nazila N.; Krishnan, Prakash; Klaum, Arthur D.; Van Ess, Joel

    2003-05-01

    The development of 100-nm design rule technologies is currently taking place in many R&D facilities across the world. For some critical alyers, the transition to 193-nm resist technology has been required to meet this leading edge design rule. As with previous technology node transitions, the materials and processes available are undergoing changes and improvements as vendors encounter and solve problems. The initial implementation of the 193-nm resits process did not meet the photolithography requirements of some IC manufacturers due to very high Post Exposure Bake temperature sensitivity and consequently high wafer to wafer CD variation. The photoresist vendors have been working to improve the performance of the 193-nm resists to meet their customer's requirements. Characterization of these new resists needs to be carried out prior to implementation in the R&D line. Initial results on the second-generation resists evaluated at Cypress Semicondcutor showed better CD control compared to the aelrier resist with comparable Depth of Focus (DOF), Exposure Latitute, Etch Resistance, etc. In addition to the standard lithography parameters, resist characterization needs to include defect density studies. It was found that the new resists process with the best CD control, resulted in the introduction of orders of magnitude higher yield limiting defects at Gate, Contact adn Local Interconnect. The defect data were shared with the resists vendor and within days of the discovery the resist vendor was able to pinpoint the source of the problem. The fix was confirmed and the new resists were successfully released to production. By including defect monitoring into the resist qualification process, Cypress Semiconductor was able to 1) drive correction actions earlier resulting in faster ramp and 2) eliminate potential yield loss. We will discuss in this paper how to apply the Micro Photo Cell Monitoring methodology for defect monitoring in the photolithogprhay module and the

  10. Extending immersion lithography down to 1x nm production nodes

    NASA Astrophysics Data System (ADS)

    de Boeij, Wim P.; Pieternella, Remi; Bouchoms, Igor; Leenders, Martijn; Hoofman, Marjan; de Graaf, Roelof; Kok, Haico; Broman, Par; Smits, Joost; Kuit, Jan-Jaap; McLaren, Matthew

    2013-04-01

    In this paper we report on the performance enhancements on the NXT immersion scanner platform to support the immersion lithography roadmap. We particular discuss scanner modules that enable future overlay and focus requirements. Among others we describe the improvements in grid calibrations and grid matching; thermal control of reticle heating with dynamic systems adjustments; aberration tuning and FlexWave-lens heating control as well as aberration- and overlay-metrology on wafer-2-wafer timescales. Finally we address reduction of leveling process dependencies, stage servo dynamics and wafer table flatness to enhance on-product focus and leveling performance. We present and discuss module- and system-data of the above mentioned scanner improvements.

  11. Study on immersion lithography defectivity improvement in memory device manufacturing

    NASA Astrophysics Data System (ADS)

    He, Weiming; Hu, Huayong; Wu, Qiang

    2015-03-01

    As integrated circuit (IC) industry steps into immersion lithography's era, defectivity in photolithography becomes more complex which requires more efforts in the analysis and solution finding when compared to traditional dry lithographic process. In this paper, we focus on one type of immersion defect from memory or flash memory devices with typical mask layouts. Since the use of self-aligned double patterning (SADP) or other double patterning techniques, the original single pattern layer has to be split into 2 mask layers: logic area vs cell area. One characteristic of such split process is that the total mask transmission rate (TR) is above 70%, with extended open area and a pattern area with a transmission rate close to 50%. This indicates that it may have special defect mechanism and type compared to logic devices. We have found one type of residue defect with center ring-like map. We have studied this defect with different development recipes and analyzed their underlying mechanisms. We have also studied the effect of different immersion photoresists including types with top-coating and without top-coating, as well as the effect of bottom anti-reflection coating (BARC) substrate (organic-BARC/Si-BARC). The results of our study will be presented and discussed.

  12. Solvent immersion nanoimprint lithography of fluorescent conjugated polymers

    SciTech Connect

    Whitworth, G. L.; Zhang, S.; Stevenson, J. R. Y.; Ebenhoch, B.; Samuel, I. D. W.; Turnbull, G. A.

    2015-10-19

    Solvent immersion imprint lithography (SIIL) was used to directly nanostructure conjugated polymer films. The technique was used to create light-emitting diffractive optical elements and organic semiconductor lasers. Gratings with lateral features as small as 70 nm and depths of ∼25 nm were achieved in poly(9,9-dioctylfluorenyl-2,7-diyl). The angular emission from the patterned films was studied, comparing measurement to theoretical predictions. Organic distributed feedback lasers fabricated with SIIL exhibited thresholds for lasing of ∼40 kW/cm{sup 2}, similar to those made with established nanoimprint processes. The results show that SIIL is a quick, convenient and practical technique for nanopatterning of polymer photonic devices.

  13. Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Nagaoka, Shiro; Yoshida, Masato; Iriuchijima, Yasuhiro; Fujiwara, Tomoharu; Shiraishi, Kenichi; Owa, Soichi

    2008-03-01

    Volume production of 45nm node devices utilizing Nikon's S610C immersion lithography tool has started. Important to the success in achieving high-yields in volume production with immersion lithography has been defectivity reduction. In this study we evaluate several methods of defectivity reduction. The tools used in our defectivity analysis included a dedicated immersion cluster tools consisting of a Nikon S610C, a volume production immersion exposure tool with NA of 1.3, and a resist coater-developer LITHIUS i+ from TEL. In our initial procedure we evaluated defectivity behavior by comparing on a topcoat-less resist process to a conventional topcoat process. Because of its simplicity the topcoatless resist shows lower defect levels than the topcoat process. In a second study we evaluated the defect reduction by introducing the TEL bevel rinse and pre-immersion bevel cleaning techniques. This technique was shown to successfully reduce the defect levels by reducing the particles at the wafer bevel region. For the third defect reduction method, two types of tool cleaning processes are shown. Finally, we discuss the overall defectivity behavior at the 45nm node. To facilitate an understanding of the root cause of the defects, defect source analysis (DSA) was applied to separate the defects into three classes according to the source of defects. DSA analysis revealed that more than 99% of defects relate to material and process, and less than 1% of the defects relate to the exposure tool. Material and process optimization by collaborative work between exposure tool vendors, track vendors and material vendors is a key for success of 45nm node device manufacturing.

  14. Advances in 193 nm excimer lasers for mass spectrometry applications

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph; Esser, Hans-Gerd; Bonati, Guido

    2016-03-01

    Ongoing progress in mass analysis applications such as laser ablation inductively coupled mass spectrometry of solid samples and ultraviolet photoionization mediated sequencing of peptides and proteins is to a large extent driven by ultrashort wavelength excimer lasers at 193 nm. This paper will introduce the latest improvements achieved in the development of compact high repetition rate excimer lasers and elaborate on the impact on mass spectrometry instrumentation. Various performance and lifetime measurements obtained in a long-term endurance test over the course of 18 months will be shown and discussed in view of the laser source requirements of different mass spectrometry tasks. These sampling type applications are served by excimer lasers delivering pulsed 193 nm output of several mJ as well as fast repetition rates which are already approaching one Kilohertz. In order to open up the pathway from the laboratory to broader market industrial use, sufficient component lifetimes and long-term stable performance behavior have to be ensured. The obtained long-term results which will be presented are based on diverse 193 nm excimer laser tube improvements aiming at e.g. optimizing the gas flow dynamics and have extended the operational life the laser tube for the first time over several billion pulses even under high duty-cycle conditions.

  15. High performance Si immersion gratings patterned with electron beam lithography

    NASA Astrophysics Data System (ADS)

    Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

    2014-07-01

    Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error

  16. Highly hydrophobic materials for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Takebe, Yoko; Shirota, Naoko; Sasaki, Takashi; Murata, Koichi; Yokokoji, Osamu

    2008-03-01

    In immersion lithography, the impact of water on resist performance and the possibility of damage to the lens by the components eluted from the resist material are seriously concern. And much work has shown that controlling the water-resist interface is critical to enabling high scan rates. Many topcoat materials have been developed to control the aforementioned interfacial properties. Developable topcoats have been particularly investigated as suitable candidates for its applicability to the resist developing process. Achieving the balance between the low surface energy required for higher receding contact angle and the base solubility for topcoat removal is challenging. We have already reported FUGU polymer which have partially fluorinated monocyclic structure and hexafluoroalcohol(HFA) group and showed that its developer solubility was excellent but hydrophobicity was insufficient for high scan rate. We have also reported that co-polymers of FUGU and highly fluorinated monomers which have perfluorinated cyclic structure had sufficient hydrophobicity but lower developer solubility. We have found that it was difficult to use these copolymers in themselves as topcoat. But by blending of moderate amount of these copolymers into FUGU polymer, we have finally obtained highly hydrophobic developer-soluble topcoat. Hydrophobicity can be controlled by blending ratio. Furthermore we have newly successfully synthesized a series of fluoropolymers, FIT polymer partially fluorinated monocyclic structure and having carboxylic acid group as developer-soluble unit. When FIT polymer as well as FUGU polymer, was blended to highly hydrophobic copolymer, the blended polymer also showed higher hydrophobicity keeping sufficient developer solubility.

  17. Solid sampling with 193-nm excimer laser ablation

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph

    2007-02-01

    Reproducible and sensitive elemental analysis of solid samples is a crucial task in areas of geology (e.g. microanalysis of fluid inclusions), material sciences, industrial quality control as well as in environmental, forensic and biological studies. To date the most versatile detection method is mass-spectroscopic multi-element analysis. In order to obtain reproducible results, this requires transferring the solid sample into the gas-phase while preserving the sample's stoichiometric composition. Laser ablation in combination with Inductively Coupled Plasma-Mass Spectrometry (LA-ICP-MS) is a proven powerful technique to meet the requirements for reliable solid sample analysis. The sample is laser ablated in an air-tight cell and the aerosol is carried by an inert gas to a micro-wave induced plasma where its constituents are atomized and ionized prior to mass analysis. The 193 nm excimer laser ablation, in particular, provides athermal sample ablation with very precise lateral ablation and controlled depth profiling. The high photon energy and beam homogeneity of the 193 nm excimer laser system avoids elemental fractionation and permits clean ablation of even transmissive solid materials such as carbonates, fluorites and pure quartz.

  18. Absolute measurements of nonlinear absorption near LIDT at 193 nm

    NASA Astrophysics Data System (ADS)

    Blaschke, Holger; Ristau, Detlev; Welsch, Eberhard; Apel, Oliver

    2001-04-01

    Previous investigations indicate that oxide coatings exhibit non-linear absorption phenomena below 200 nm. Hereby, absorption data of Al2O3 thin film coatings has been determined absolutely by laser calorimetry (LCA) at 193 nm in the low fluence regime. As an alternative, on the basis of the pulsed surface thermal lens technique (STL), photothermal measurements allow to determine the absorption relatively at fluence levels both in the subdamage fluence range far from the damage onset and close to the LIDT. By combining the two measurement techniques, the absolute determination of linear as well as multiphoton absorption can be achieved also in the vicinity of the laser damage fluences. This is of crucial interest because the initiation of damage onset can be observed immediately. Absolute absorption data of Al2O3 coatings at different laser fluences stating of some mJoule/cm2 will be presented for the wavelength 193 nm. Thus, the correlation between the increase of absorption and the onset of breakdown can be illustrated impressively. The evaluation and discussion of the experimental results are focused on the degree of non-linearity of the investigated absorption behavior of oxide single layers initiating the optical breakdown of UV oxide coatings.

  19. Defect transfer from immersion exposure process to post processing and defect reduction using novel immersion track system

    NASA Astrophysics Data System (ADS)

    Miyahara, Osamu; Shimoaoki, Takeshi; Wakamizu, Shinya; Kitano, Junichi; Ono, Yoshiharu; Maejima, Shinroku; Hanawa, Tetsuro; Suko, Kazuyuki

    2007-03-01

    As a promising way to scale down semiconductor devices, 193-nm immersion exposure lithography is being developed at a rapid pace and is nearing application to mass production. This technology allows the design of projection lens with higher numerical aperture (NA) by filling the space between the projection lens and the silicon wafer with a liquid (de-ionized water). However, direct contact between the resist film and water during exposure creates a number of process risks. There are still many unresolved issues and many problems to be solved concerning defects that arise in 193-nm immersion lithography. The use of de-ionized water during the exposure process in 193-nm immersion lithography can lead to a variety of problems. For example, the trapping of microscopic air bubbles can degrade resolution, and residual water droplets left on the wafer surface after immersion exposure can affect resolution in the regions under those droplets. It has also been reported that the immersion of resist film in de-ionized water during exposure can cause moisture to penetrate the resist film and dissolve resist components, and that immersion can affect critical dimensions as well as generate defects. The use of a top coat is viewed as one possible way to prevent adverse effects from the immersion of resist in water, but it has been reported that the same problems may occur even with a top coat and that additional problems may be generated, such as the creation of development residues due to the mixing of top coat and resist. To make 193-nm immersion lithography technology practical for mass production, it is essential that the above defect problems be solved. Importance must be attached to understanding the conditions that give rise to residual defects and their transference in the steps between lithography and the etching/cleaning processes. In this paper, we use 193-nm immersion lithography equipment to examine the transference (traceability) of defects that appear in actual

  20. 300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers.

    PubMed

    Xuan, Hongwen; Zhao, Zhigang; Igarashi, Hironori; Ito, Shinji; Kakizaki, Kouji; Kobayashi, Yohei

    2015-04-20

    A narrow-linewidth, high average power deep-ultraviolet (DUV) coherent laser emitting at 193 nm is demonstrated by frequency mixing a Yb-hybrid laser with an Er-fiber laser. The Yb-hybrid laser consists of Yb-fiber lasers and an Yb:YAG amplifier. The average output power of the 193 nm laser is 310 mW at 6 kHz, which corresponds to a pulse energy of 51 μJ. To the best of our knowledge, this is the highest average power and pulse energy ever reported for a narrow-linewidth 193 nm light generated by a combination of solid-state and fiber lasers with frequency mixing. We believe this laser will be beneficial for the application of interference lithography by seeding an injection-locking ArF eximer laser. PMID:25969096

  1. 300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers.

    PubMed

    Xuan, Hongwen; Zhao, Zhigang; Igarashi, Hironori; Ito, Shinji; Kakizaki, Kouji; Kobayashi, Yohei

    2015-04-20

    A narrow-linewidth, high average power deep-ultraviolet (DUV) coherent laser emitting at 193 nm is demonstrated by frequency mixing a Yb-hybrid laser with an Er-fiber laser. The Yb-hybrid laser consists of Yb-fiber lasers and an Yb:YAG amplifier. The average output power of the 193 nm laser is 310 mW at 6 kHz, which corresponds to a pulse energy of 51 μJ. To the best of our knowledge, this is the highest average power and pulse energy ever reported for a narrow-linewidth 193 nm light generated by a combination of solid-state and fiber lasers with frequency mixing. We believe this laser will be beneficial for the application of interference lithography by seeding an injection-locking ArF eximer laser.

  2. Tuning and simulating a 193-nm resist for 2D applications

    NASA Astrophysics Data System (ADS)

    Howard, William B.; Wiaux, Vincent; Ercken, Monique; Bui, Bang; Byers, Jeff D.; Pochkowski, Mike

    2002-07-01

    For some applications, the usefulness of lithography simulation results depends strongly on the matching between experimental conditions and the simulation input parameters. If this matching is optimized and other sources of error are minimized, then the lithography model can be used to explain printed wafer experimental results. Further, simulation can be useful in predicting the results or in choosing the correct set of experiments. In this paper, PROLITH and ProDATA AutoTune were used to systematically vary simulation input parameters to match measured results on printed wafers used in a 193 nm process. The validity of the simulation parameters was then checked using 3D simulation compared to 2D top-down SEM images. The quality of matching was evaluated using the 1D metrics of average gate CD and Line End Shortening (LES). To ensure the most accurate simulation, a new approach was taken to create a compound mask from GDSII contextual information surrounding an accurate SEM image of the reticle region of interest. Corrections were made to account for all metrology offsets.

  3. Photorefractive keratectomy at 193 nm using an erodible mask

    NASA Astrophysics Data System (ADS)

    Gordon, Michael; Brint, Stephen F.; Durrie, Daniel S.; Seiler, Theo; Friedman, Marc D.; Johnsson, N. M. F.; King, Michael C.; Muller, David F.

    1992-08-01

    Clinical experience with more than ten thousand sighted eyes has demonstrated great promise for correcting myopia with photorefractive keratectomy (PRK). Previously reported techniques have incorporated computer-controlled irises, diaphragms, and apertures to regulate the desired distribution of 193 nm radiation onto the eye. This paper reports on an entirely new approach for performing PRK which utilizes an erodible mask to control the shape transfer process. Compared to the more traditional techniques, the erodible mask offers promise of correcting a broad range of refractive errors. In this paper the erodible mask and associated hardware are described in detail. We describe the shape transfer experiments used to predict the functional relationship between the desired refractive correction and the mask shape. We report on early clinical results from five patients with myopic astigmatism. We conclude that the early shape transfer experiments overestimated the spherical component of the correction by 1.25 diopters and underestimated the cylindrical component by approximately 0.85 diopters. The data suggest there may be biological effects which evoke different healing responses when myopic PRK corrections are performed with and without astigmatism. Clinical trials are proceeding with the mask shapes adjusted for these observations.

  4. Advances in hardware, software, and automation for 193nm aerial image measurement systems

    NASA Astrophysics Data System (ADS)

    Zibold, Axel M.; Schmid, R.; Seyfarth, A.; Waechter, M.; Harnisch, W.; Doornmalen, H. v.

    2005-05-01

    A new, second generation AIMS fab 193 system has been developed which is capable of emulating lithographic imaging of any type of reticles such as binary and phase shift masks (PSM) including resolution enhancement technologies (RET) such as optical proximity correction (OPC) or scatter bars. The system emulates the imaging process by adjustment of the lithography equivalent illumination and imaging conditions of 193nm wafer steppers including circular, annular, dipole and quadrupole type illumination modes. The AIMS fab 193 allows a rapid prediction of wafer printability of critical mask features, including dense patterns and contacts, defects or repairs by acquiring through-focus image stacks by means of a CCD camera followed by quantitative image analysis. Moreover the technology can be readily applied to directly determine the process window of a given mask under stepper imaging conditions. Since data acquisition is performed electronically, AIMS in many applications replaces the need for costly and time consuming wafer prints using a wafer stepper/ scanner followed by CD SEM resist or wafer analysis. The AIMS fab 193 second generation system is designed for 193nm lithography mask printing predictability down to the 65nm node. In addition to hardware improvements a new modular AIMS software is introduced allowing for a fully automated operation mode. Multiple pre-defined points can be visited and through-focus AIMS measurements can be executed automatically in a recipe based mode. To increase the effectiveness of the automated operation mode, the throughput of the system to locate the area of interest, and to acquire the through-focus images is increased by almost a factor of two in comparison with the first generation AIMS systems. In addition a new software plug-in concept is realised for the tools. One new feature has been successfully introduced as "Global CD Map", enabling automated investigation of global mask quality based on the local determination of

  5. A year in the life of an immersion lithography alpha tool at Albany NanoTech

    NASA Astrophysics Data System (ADS)

    Tittnich, Michael; Hartley, John; Denbeaux, Greg; Okoroanyanwu, Uzo; Levinson, Harry; Petrillo, Karen; Robinson, Chris; Gil, Dario; Corliss, Dan; Back, David; Brandl, Stefan; Schwarz, Christian; Goodwin, Frank; Wei, Yayi; Martinick, Brian; Housley, Richard; Benson, Peter; Cummings, Kevin

    2006-03-01

    Immersion Lithography continues to get more and more attention as a possible solution for the 45nm technology node puzzle. In 2005, there has, indeed, been a lot of progress made. It has gone from a laboratory curiosity to being one of the industry's prime contenders for the lithography technology of choice for the 45nm node. Yet a lot of work remains to be done before it's fully implemented into production. Today, there are over a dozen full field immersion scanners in R&D and pilot lines all around the world. The first full field, pre-production "Alpha" version of the ASML Twinscan AT 1150i was delivered to Albany NanoTech in August, 2004. A consortium made up of AMD, IBM, Infineon, and Micron Technology began early evaluation of immersion technology and in December of 2004, the production of the world's first Power PC microprocessor using immersion lithography, processed on this tool, was announced by IBM. This paper will present a summary of some of the work that was done on this system over the past year. It will also provide an overview of Albany NanoTech, the facility, its capabilities, and the programs in place. Its operating model, which is heavily focused on cooperative joint ventures, is described. The immersion data presented is a review of the work done by AMD, IBM, Infineon Technologies, and Micron Technology, all members of the INVENT Lithography Consortium in place at Albany NanoTech. All the data was published and presented by the authors in much more detail at the 2005 International Symposium on Immersion Lithography, in Bruges, Belgium.

  6. High refractive index materials design for the next generation ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Furukawa, Taiichi; Kishida, Takanori; Yasuda, Kyouyuu; Shimokawa, Tsutomu; Liu, Zhi; Slezak, Mark; Hieda, Katsuhiko

    2008-03-01

    High-refractive-index fluids (HIFs) are being considered to replace water as the immersion fluid in next generation 193nm immersion scanner. We have demonstrated the attractive optical properties for our HIF candidates, HIL-001, HIL-203 and HIL-204. Especially, HIL-203 and HIL-204 have higher transmittance compared to water. In this paper, we describe our latest results on the comparative evaluations including photo-degradation behavior and lens contamination phenomenon in a flow system. For laser induced fluid degradation behavior, it was shown the higher initial transmittance resulted in the higher laser durability. However, the complicated phenomenon was observed for the lens contamination test. That is, HIL-204 with higher initial transmittance showed higher lens contamination rate than HIL-203. From several analyses, the complicated behaviors among HILs were speculated to be caused by the different nature of photo-degraded impurities. In order to control the fluid transmittance change and suppress the lens contamination during exposure, the refining process was definitely necessary for HIL reuse system. Based on the refining mechanism and the refining material design, we have developed an appropriate refinement unit named Refine B. This approach provided us with the result that Refine B could control the change of fluid transmittance and suppress the lens contamination rate.

  7. A reliable higher power ArF laser with advanced functionality for immersion lithography

    NASA Astrophysics Data System (ADS)

    Kurosu, Akihiko; Nakano, Masaki; Yashiro, Masanori; Yoshino, Masaya; Tsushima, Hiroaki; Masuda, Hiroyuki; Kumazaki, Takahito; Matsumoto, Shinichi; Kakizaki, Kouji; Matsunaga, Takashi; Okazaki, Shinji; Fujimoto, Junichi; Mizoguchi, Hakaru

    2012-03-01

    193nm ArF eximer lasers are expected to continue to be the main solution in photolithography, since advanced lithography tecnologies such as Multiple patterning and Self-aligned double patterning (SADP) are being developed. In order to appliy these tecnologies to high-volume semiconductor manufactureing, the key is to contain chip manufactureing costs. Therefore, improvement on Reliability, Availability and Maintainability of ArF excimer lasers is important.[1] We works on improving productivity and reducing downtime of ArF exmer lasers, which leads to Reliability, Availability and Maintainability improvemnet. First in this paper, our focus drilling tecnique, which increases depth of focus (DoF) by spectral bandwidth tuning is introdueced. This focus drilling enables to increase DoF for isolated contact holes. and it not degrades the wafer stage speed.[2] Second, a technique which eables to reduce gas refill time to zero is introduced. This technique reduces downtime so Availavility is expected to improve. In this paper, we report these tecniques by using simulation resutls and partially experimental resutls provided by a semiconductor manufacturer.

  8. High-refractive-index fluids for the next-generation ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Wang, Yong; Miyamatsu, Takashi; Furukawa, Taiichi; Yamada, Kinji; Tominaga, Tetsuo; Makita, Yutaka; Nakagawa, Hiroki; Nakamura, Atsushi; Shima, Motoyuki; Kusumoto, Shiro; Shimokawa, Tsutomu; Hieda, Katsuhiko

    2006-03-01

    ArF immersion lithography using a high-refractive-index fluid (HIF) is considered to be a promising candidate for the 32nm node or below. At SPIE 2005 we introduced a new immersion fluid, JSR HIL-1, which has a refractive index and transmittance of 1.64 and >98%/mm (193.4nm, 23 °C), respectively. With HIL-1 immersion and a two beam interferometric exposure tool, hp32nm L/S imaging has been demonstrated. In this paper, we will report another novel immersion fluid, HIL-2, which has a transmittance of >99%/mm, which is almost as high as that of water, and a refractive index of 1.65 (193.4nm, 23 °C). Furthermore, an ArF laser irradiation study has shown that the degree of photodecomposition for both HIL-1 and HIL-2 is small enough for immersion lithography application. A "fluid puddle" defect study confirmed that HILs have less tendency to form immersion-specific photoresist defects and the refractive indices of HILs were found constant under laser irradiation. Batch-to-batch variation in refractive index during manufacture of HILs was not observed. By refining prism designs, hp30nm L/S patterns have also been successfully imaged with two interferometric exposure tools and HIL immersion.

  9. Charting CEBL's role in mainstream semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Lam, David K.

    2013-09-01

    historically kept it out of mainstream fabs. Thanks to continuing EBDW advances combined with the industry's move to unidirectional (1D) gridded layout style, EBDW promises to cost-efficiently complement 193nm ArF immersion (193i) optical lithography in high volume manufacturing (HVM). Patterning conventional 2D design layouts with 193i is a major roadblock in device scaling: the resolution limitations of optical lithography equipment have led to higher mask cost and increased lithography complexity. To overcome the challenge, IC designers have used 1D layouts with "lines and cuts" in critical layers.1 Leading logic and memory chipmakers have been producing advanced designs with lines-and-cuts in HVM for several technology nodes in recent years. However, cut masks in multiple optical patterning are getting extremely costly. Borodovsky proposes Complementary Lithography in which another lithography technology is used to pattern line-cuts in critical layers to complement optical lithography.2 Complementary E-Beam Lithography (CEBL) is a candidate to pattern the Cuts of optically printed Lines. The concept of CEBL is gaining acceptance. However, challenges in throughput, scaling, and data preparation rate are threatening to deny CEBL's role in solving industry's lithography problem. This paper will examine the following issues: The challenges of massively parallel pixel writing The solutions of multiple mini-column design/architecture in: Boosting CEBL throughput Resolving issues of CD control, CDU, LER, data rate, higher resolution, and 450mm wafers The role of CEBL in next-generation solution of semiconductor lithography

  10. A new high-aperture 193 nm microscope for the traceable dimensional characterization of micro- and nanostructures

    NASA Astrophysics Data System (ADS)

    Ehret, G.; Pilarski, F.; Bergmann, D.; Bodermann, B.; Buhr, E.

    2009-08-01

    A new deep UV transmission microscope for traceable micro- and nanometrology is currently being set up at the Physikalisch-Technische Bundesanstalt (PTB), the National Metrology Institute of Germany. The new microscope is especially designed to enable linewidth measurements of micro- and nanostructures with an unsurpassed absolute measurement uncertainty of down to 10 nm (95% confidence interval). The optical resolution is about 100 nm. The main field of this tool will be critical dimension (CD) metrology of photomasks used in optical lithography. In particular, this system offers the possibility of 'at-wavelength' metrology for the currently applied 193 nm lithography technology. The high lateral resolution will be attained by means of 193 nm excimer laser radiation for illumination in conjunction with a high-aperture objective (NA = 0.9). The illumination and imaging system will provide various imaging modalities, ranging from ordinary brightfield to specially structured illumination schemes. Traceability to the SI unit 'meter' will be accomplished by means of laser interferometry. The mechanical set-up is characterized by an ultra-stable bridge construction on a granite base and has been designed with special emphasis on realizing a positioning stability in the nanometer range. The instrument is being set up in the Clean Room Centre of the PTB and will be ready for operation in mid 2009. Simulation calculations, based on a rigorous optical modeling of the expected microscope images, are presented. These simulations are made for the important application of measuring Cr structures on quartz photomasks. Based on these simulations and on available data of the uncertainties of various experimental parameters—including instrument and sample parameters—expected uncertainty budgets for the measurement of the width of Cr lines on quartz substrates are estimated.

  11. Non-reciprocal double-exposure materials for 193nm pitch division

    NASA Astrophysics Data System (ADS)

    Bristol, Robert; Roberts, Jeanette; Shykind, David; Blackwell, James M.

    2010-04-01

    We present an overview of lithography results achieved for materials to support "leave-on-chuck" double-exposure pitch-division patterning. These materials attempt to make use of a non-reciprocal photoresponse in which the same number of absorbed 193nm photons can produce different remaining levels of resist, depending upon whether the photons are received all at once or in two separate exposures. This, in principle, allows for the use of two exposures, using independent masks and without removing the wafer from the chuck, to produce non-regular patterning down to one half the pitch limit of the scanner. Such behavior could be produced, for example, by a reversible two-stage Photoacid Generator (PAG) or other non-reciprocal mechanisms. Several stages of lithography screening were done on a large number of candidate systems. Initially, thermal stability, casting behavior, and single-exposure (SE) contrast curves were investigated to determine whether the system behaved as a usable photoresist. The next stage of testing probed non-reciprocal response, in the form of double-exposure (DE) contrast curves, typically with an intervening whole-wafer flood exposure at a longer wavelength to enact the nonreciprocity. The key criterion for the material to pass this stage was to show a shifted contrast curve (difference in photospeed) for DE vs. SE. Such a shift would then imply that pitch-division imaging would be possible for this material. After identifying materials which exhibited this SE vs. DE contrast curve shift, the next step was actual DE patterning. Since the laboratory tool used for these exposures does not have the precise alignment needed to interleave the two exposures for pitch division, we employed a technique in which the second exposure is rotated slightly with respect to the first exposure. This results in a Moiré-type pattern in which the two aerial images transition between overlap and interleave across the wafer. One particular PAG + sensitizer did

  12. Synthesis of novel α-fluoroacrylates and related polymers for immersion lithography

    NASA Astrophysics Data System (ADS)

    Yamashita, Tsuneo; Ishikawa, Takuji; Morita, Masamichi; Kanemura, Takashi; Aoyama, Hirokazu

    2008-03-01

    Immersion lithography is being actively developed toward mass production for 55nm node devices and beyond. Advances are being made toward large depths of focus and higher resolution, but the underlying problem of machine and material cost increases remains. Our work over the past few years has shown that the main-chain fluorinated base resins realized by the co-polymerization of tetrafluoroethylene (TFE) and norbornene derivatives offer high dissolution rates and moderate surface properties. However, it is difficult to synthesis these materials and their high cost is disadvantageous. Recently, we switched our attention to α-fluoroacrylate and have synthesized various monomers and polymers for immersion lithography. α-fluoroacrylate has a polymerization rate faster than acrylate and methacrylate, and its polymers are superior to theirs. In this paper, we will report these synthesis methods and immersion specific properties such as the dissolution rate in standard alkaline solution and water contact angle. Furthermore, we consider with relationship between dissolution rate and polymer structure by infrared method.

  13. Directed self-assembly (DSA) grapho-epitaxy template generation with immersion lithography

    NASA Astrophysics Data System (ADS)

    Ma, Yuansheng; Lei, Junjiang; Torres, J. A.; Hong, Le; Word, James; Fenger, Germain; Tritchkov, Alexander; Lippincott, George; Gupta, Rachit; Lafferty, Neal; He, Yuan; Bekaert, Joost; Vanderberghe, Geert

    2015-03-01

    In this paper, we present an optimization methodology for the template designs of sub-resolution contacts using directed self-assembly (DSA) with grapho-epitaxy and immersion lithography. We demonstrate the flow using a 60nm-pitch contact design in doublet with Monte Carlo simulations for DSA. We introduce the notion of Template Error Enhancement Factor (TEEF) to gauge the sensitivity of DSA printing infidelity to template printing infidelity, and evaluate optimized template designs with TEEF metrics. Our data shows that SMO is critical to achieve sub-80nm non- L0 pitches for DSA patterns using 193i.

  14. Absorption coefficients for water vapor at 193 nm from 300 to 1073 K

    NASA Technical Reports Server (NTRS)

    Kessler, W. J.; Carleton, K. L.; Marinelli, W. J.

    1993-01-01

    Measurements of the water absorption coefficient at 193 nm from 300 to 1073 K are reported. The measurements were made using broadband VUV radiation and a monochromator-based detection system. The water vapor was generated by a saturator and metered into a flowing, 99 cm absorption cell via a water vapor mass flow meter. The 193 nm absorption coefficient measurements are compared to room temperature and high temperature shock tube measurements with good agreement. The absorption can be parameterized by a nu3 vibrational mode reaction coordinate and the thermal population of the nu3 mode.

  15. Manufacturing implementation of scatterometry and other techniques for 300-mm lithography tool controls

    NASA Astrophysics Data System (ADS)

    Wiltshire, T.; Corliss, D.; Brunner, T.; Ausschnitt, C.; Young, R.; Nielson, R.; Hwang, E.; Iannucci, J., Jr.

    2009-03-01

    Focus and dose control of lithography tools for leading edge semiconductor manufacturing are critical to obtaining acceptable process yields and device performance. The need for these controls is increasing due to the apparent limitation of optical water immersion lithography at NA values of approximately 1.35 and the need to use the same equipment for 45nm, 32nm, and 22nm node production. There is a rich history of lithographic controls using various techniques described in the literature. These techniques include (but are not limited to) Phase Grating Focus Monitoring1 (PGFM), optical CD control using optical overlay metrology equipment (OOCD)2,3, and in more recent years optical scatterometry4,5. Some of the techniques, even though they are technically sound, have not been practical to implement in volume manufacturing as controls for various reasons. This work describes the implementation and performance of two of these techniques (optical scatterometry and OOCD) in a volume 300mm production facility. Data to be reviewed include: - General implementation approach. - Scatterometry dose and focus stability data for 193nm immersion and 248nm dry lithography systems. - Analysis of the stability of optical scatterometry dose and focus deconvolution coefficients over time for 193nm immersion and 248nm dry systems. - Comparison between scatterometry and OOCD techniques for focus monitoring of 248nm dry systems. The presentation will also describe the practical issues with implementing these techniques as well as describe some possible extensions to enhance the current capabilities being described.

  16. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes.

  17. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications

    NASA Astrophysics Data System (ADS)

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I.; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.69), which enables efficient light focusing even inside other media such as water or adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping and fiber probes.

  18. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes. PMID:27472584

  19. Rotational Spectrum of CBr by Kinetic Microwave Spectroscopy of 193-nm Photolysis Products of Bromoform.

    PubMed

    Hassouna; Walters; Demuynck; Bogey

    2000-03-01

    We have measured the first millimeter-wave spectrum of CBr. The radical was produced by pulsed UV-laser photolysis of bromoform at 193 nm and detected using kinetic spectroscopy. We have significantly improved the rotational and fine structure constants for the ground vibrational state. The hyperfine structure due to the bromine nucleus has been resolved and quadrupole and magnetic hyperfine parameters evaluated for the first time. Copyright 2000 Academic Press.

  20. Rayleigh rejection filters for 193-nm ArF laser Raman spectroscopy

    NASA Technical Reports Server (NTRS)

    Mckenzie, Robert L.

    1993-01-01

    Selected organic absorbers and their solvents are evaluated as spectral filters for the rejection of 193-nm Rayleigh light associated with the use of an ArF excimer laser for Raman spectroscopy. A simply constructed filter cell filled with 0.5 percent acetone in water and an optical path of 7 mm is shown effectively to eliminate stray Rayleigh light underlying the Raman spectrum from air while transmitting 60 percent of the Raman light scattered by O2.

  1. Feasibility study of optical/e-beam complementary lithography

    NASA Astrophysics Data System (ADS)

    Hohle, Christoph; Choi, Kang-Hoon; Freitag, Martin; Gutsch, Manuela; Jaschinsky, Philipp; Kahlenberg, Frank; Klein, Christof; Klikovits, Jan; Paul, Jan; Rudolph, Matthias; Thrun, Xaver

    2012-03-01

    Using electron beam direct write (EBDW) as a complementary approach together with standard optical lithography at 193nm or EUV wavelength has been proposed only lately and might be a reasonable solution for low volume CMOS manufacturing and special applications as well as design rule restrictions. Here, the high throughput of the optical litho can be combined with the high resolution and the high flexibility of the e-beam by using a mix & match approach (Litho- Etch-Litho-Etch, LELE). Complementary Lithography is mainly driven by special design requirements for unidirectional (1-D gridded) Manhattan type design layouts that enable scaling of advanced logic chips. This requires significant data prep efforts such as layout splitting. In this paper we will show recent results of Complementary Lithography using 193nm immersion generated 50nm lines/space pattern addressing the 32nm logic technology node that were cut with electron beam direct write. Regular lines and space arrays were patterned at GLOBALFOUNDRIES Dresden and have been cut in predefined areas using a VISTEC SB3050DW e-beam direct writer (50KV Variable Shaped Beam) at Fraunhofer Center Nanoelectronic Technologies (CNT), Dresden, as well as on the PML2 tool at IMS Nanofabrication, Vienna. Two types of e-beam resists were used for the cut exposure. Integration issues as well as overlay requirements and performance improvements necessary for this mix & match approach will be discussed.

  2. Development of high-transmittance phase-shifting mask for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Ahn, Won-suk; Seo, Hwan-Seok; Bang, Ju-Mi; Kim, Ji-Young; Song, Jae-Min; Seung, Byoung-Hoon; Kim, Hee-Bom; Jeon, Chan-Uk

    2015-07-01

    A new PSM using high transmittance is developed to overcome patterning process limits in ArF immersion lithography. We optimized mask structure, materials, and film thicknesses for patterning process. A new material for phase-shifter is applied to the HT-PSM to exhibit higher transmittance in ArF wavelengths and the thickness of the new material is thinner than that of the conventional 6% phase-shifter (MoSiON). A new blank structure using a MoSi shading layer with double Cr hardmasks (HM) is developed and suggested for the HTPSM process. Double HM blank stacks enable the HT-PSM to adopt thin PR process for resolution enhancement in mask process. The first Cr on the MoSi is utilized as a HM to etch MoSi shading layer, an adhesion layer for PR process, and also a capping layer to protect blind area during MoSi and phase-shifter etching. In contrast, the role of the second Cr between MoSi and phase-shifter is an etch stopper for MoSi and a HM to etch phase-shifter at the same time. However, Double HM process has some problems, such as first Cr removal during second Cr etching and complex process steps. To solve the Cr removal issues, we evaluated various Cr layers which have different etchrates and compositions. According to the evaluations, we optimized thicknesses and compositions of the two Cr layers and corresponding etching conditions. Lithography simulations demonstrate that the new HT-PSM has advantages in NILS in aerial images. As a result, initial wafer exposure experiments using the HT-PSM show 13-32% improvements in LCDU compared to that of the conventional 6% PSM due to its higher NILS.

  3. Time-resolved FTIR studies of the photodissociation of pyruvic acid at 193 nm

    NASA Astrophysics Data System (ADS)

    Hall, Gregory E.; Muckerman, James T.; Preses, Jack M.; Flynn, Ralph E. Weston George W., Jr.

    1992-05-01

    Infrared emission from carbon dioxide produced in the 193 nm photolysis of pyruvic acid vapor has been investigated using time-resolved Fourier transform infrared spectroscopy as a probe. A broad feature, strongly red-shifted from the antisymmetric stretching fundamental (ν 3) of CO 2, dominates the early spectrum. A statistical model using a linear surprisal is shown to provide good agreement with the observed spectral contour, but only if the energy available to the photofragments corresponds to the direct formation of acetaldehyde along with CO 2.

  4. 193-nm-laser-induced spectral shift in HR coated mirrors

    NASA Astrophysics Data System (ADS)

    Cho, Byungil; Rudisill, J. Earl; Danielewicz, Edward

    2012-12-01

    High-reflectance mirrors, fabricated by use of fluoride coating materials, were irradiated for extended periods by a 193-nm kilohertz repetitive laser source. This irradiation promoted a spectral shift in the reflectance band towards shorter wavelengths. In efforts to determine the mechanism for the observed spectral shifts, various models were investigated by employing such techniques as spectrophotometry, surface profile interferometry, coating design simulation, and x-ray diffraction. The result of the investigation indicates that layers near the top surface of the coating structure underwent densification, which resulted in the observed spectral shift.

  5. Collateral damage-free debridement using 193nm ArF laser

    NASA Astrophysics Data System (ADS)

    Wynne, James J.; Felsenstein, Jerome M.; Trzcinski, Robert; Zupanski-Nielsen, Donna; Connors, Daniel P.

    2011-03-01

    Burn eschar and other necrotic areas of the skin and soft tissue are anhydrous compared to the underlying viable tissue. A 193 nm ArF excimer laser, emitting electromagnetic radiation at 6.4 eV at fluence exceeding the ablation threshold, will debride such necrotic areas. Because such radiation is strongly absorbed by aqueous chloride ions through the nonthermal process of electron photodetachment, debridement will cease when hydrated (with chloride ions) viable tissue is exposed, avoiding collateral damage to this tissue. Such tissue will be sterile and ready for further treatment, such as a wound dressing and/or a skin graft.

  6. Novel topcoat materials with improved receding angles and dissolution properties for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Yun, Sang Geun; Lee, Jin Young; Yang, Young Soo; Shin, Seung Wook; Lee, Sung Jae; Kwon, Hyo Young; Cho, Youn Jin; Choi, Seung Jib; Choi, Sang Jun; Kim, Jong Seob; Chang, Tuwon

    2010-04-01

    A topcoat material plays a significant role in achieving technology nodes below 45 nm via ArF immersion lithography. Switching the exposure medium between the lens and the photoresist (PR) film from gas (air, n=1) to liquid (H2O, n=1.44) may lead to leaching of the polymer, the photoacid generator (PAG), or the solvent. These substances can contaminate the lens or cause bubbles, which can lead to defects during the patterning. Previously reported topcoat materials mainly use hydrophobic fluoro-compounds and carboxylic acids to provide high dissolution rates (DR) to basic developers as well as high receding contact angles (RCA). Recently, the demand for a new top-coat material has risen since current materials cause water-mark defects and decreases in scan speeds, due to insufficient RCA's. However, RCA and DR are in a trade-off relationship as an increase in RCA generally results in a lower DR. To overcome this, a novel polymer with high-fluorine content was synthesized to produce a topcoat material with improved DR (120 nm/s in 2.38 wt% TMAH) and RCA (>70°). In addition, a strategy to control the pattern profile according to needs of customers was found.

  7. RET masks for patterning 45nm node contact hole using ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Hsu, Michael; Chen, J. Fung; Van Den Broeke, Doug; En Tszng, Shih; Shieh, Jason; Hsu, Stephen; Shi, Xuelong

    2006-05-01

    Immersion exposure system with the numerical aperture (NA) greater than unity effectively extends the printing resolution limit without the need of shrinking the exposure wavelength. From the perspective of imaging contact hole mask, we are convinced that a mature ArF immersion exposure system will be able to meet 45nm node manufacturing requirement. However, from a full-chip mask data processing point of view, a more challenging question could be: how to ensure the intended RET mask to best achieve a production worthy solution? At 45nm, we are using one-fourth of the exposure wavelength for the patterning; there is very little room for error. For full-chip, especially for contact hole mask, we need a robust RET mask strategy to ensure sufficient CD control. A production-worthy RET mask technology should have good imaging performance with advanced exposure system; and, it should base on currently available mask blank material and be compatible with the existing mask making process. In this work, we propose a new type of contact hole RET masks that is capable of 45nm node full-chip manufacturing. Three types of potential RET masks are studied. The 1st type is the conventional 6% attenuated PSM (attPSM) with 0-phase Scattering Bars (SB). The 2nd type is to use CPL mask with both 0- and π-phase SB, and their relative placements are based on interference mapping lithography (IML) under optimized illumination. The 3rd type, here named as 6% CPL, can be thought of as a CPL mask type with 6% transmission on the background but with π-phase SB only. Of those three RET masks, 6% CPL mask has the best performance for printing 45nm contact and via masks. To implement 6% CPL for contact and via mask design, we study several critical process steps starting from the illumination optimization, model-based SB OPC, 3D mask effect, quartz etch depth optimization, side-lobe printability verification, and then to the mask making flow. Additionally, we investigate printability for

  8. Clinical use of the 193-nm excimer laser in the treatment of corneal scars.

    PubMed

    Sher, N A; Bowers, R A; Zabel, R W; Frantz, J M; Eiferman, R A; Brown, D C; Rowsey, J J; Parker, P; Chen, V; Lindstrom, R L

    1991-04-01

    Phototherapeutic keratectomy using a 193-nm excimer laser was performed at four centers on 33 sighted patients with corneal opacity and/or irregular astigmatism. Pathologic conditions included anterior stromal and superficial scarring from postinfectious and posttraumatic causes, including inactive herpes simplex virus, anterior corneal dystrophies, recurrent erosions, granular dystrophy, and band keratopathy. Most patients received peribulbar anesthesia and underwent removal of the epithelium prior to laser ablation. A majority of patients had a reduction in the amount of corneal scarring and approximately half had improved visual acuity. No intraocular reaction or changes in endothelial counts were seen, and some patients avoided the need for penetrating keratoplasty. Reepithelialization usually occurred within 4 or 5 days and we noted no significant scarring secondary to use of the laser. It was difficult to eliminate preexisting irregular astigmatism despite the use of surface modulators, such as methylcellulose. A hyperopic shift secondary to corneal flattening was encountered in approximately 50% of the patients. A combination of myopic ablation, followed immediately by a secondary hyperopic steepening, may minimize this refractive change. The 193-nm excimer laser is an effective new tool in the treatment of selected patients with superficial corneal opacity from a variety of conditions. PMID:2012547

  9. 193 nm excimer laser sclerostomy in pseudophakic patients with advanced open angle glaucoma.

    PubMed Central

    Allan, B D; van Saarloos, P P; Cooper, R L; Constable, I J

    1994-01-01

    A modified open mask system incorporating an en face air jet to dry the target area during ablation and a conjunctival plication mechanism, which allows ab externo delivery of the 193 nm excimer laser without prior conjunctival dissection, has been developed to form small bore sclerostomies accurately and atraumatically. Full thickness sclerostomies, and sclerostomies guarded by a smaller internal ostium can be created. A pilot therapeutic trial was conducted in pseudophakic patients with advanced open angle glaucoma. Six full thickness sclerostomies (200 microns and 400 microns diameter) and three guarded sclerostomies were created in nine patients by 193 nm excimer laser ablation (fluence per pulse 400 mJ/cm2, pulse rate 16 Hz, air jet pressure intraocular pressure +25 mm Hg). After 6 months' follow up, intraocular pressure was controlled (< or = 16 mm Hg) in eight of the nine patients (6/9 without medication). Early postoperative complications included hyphaema (trace--2.5 mm) (6/9), temporary fibrinous sclerostomy occlusion (4/9), profound early hypotony (all patients without fibrinous occlusion), and suprachoroidal haemorrhage in one case. Conjunctival laser wounds were self sealing. Small bore laser sclerostomy procedures are functionally equivalent to conventional full thickness procedures, producing early postoperative hypotony, with an increased risk of suprachoroidal haemorrhage in association with this. Further research is required to improve control over internal guarding in excimer laser sclerostomy before clinical trials of this technique can safely proceed. Images PMID:8148335

  10. Internal state distribution of the CF fragment from the 193 nm photodissociation of CFCl and CFBr

    NASA Astrophysics Data System (ADS)

    Shin, Seung Keun; Dagdigian, Paul J.

    2007-04-01

    The dynamics of the 193nm photodissociation of the CFCl and CFBr molecules have been investigated in a molecular beam experiment. The CFCl and CFBr parent molecules were generated by pyrolysis of CHFCl2 and CFBr3, respectively, and the CFCl and the CF photofragment were detected by laser fluorescence excitation. The 193nm attenuation cross section of CFCl was determined from the reduction of the CF photofragment signal as a function of the photolysis laser fluence. The internal state distribution was derived from the analysis of laser fluorescence excitation spectra in the AΣ+2-XΠ2 band system. A very low degree of rotational excitation, with essentially equal A' and A″ Λ-doublet populations, and no vibrational excitation were found in the CF photofragment. The energy available to the photofragments is hence predominantly released as translational energy. The CF internal state distribution is consistent with the dissociation of a linear intermediate state. Considerations of CFCl electronic states suggest that a bent Rydberg state is initially excited.

  11. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Conde, J. C.; Chiussi, S.; Serra, C.; González, P.

    2016-01-01

    193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3 μm diameter and around 25 nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240 mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2 μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.

  12. Photoinduced absorption and refractive-index induction in phosphosilicate fibres by radiation at 193 nm

    SciTech Connect

    Rybaltovsky, A A; Sokolov, V O; Plotnichenko, V G; Lanin, Aleksei V; Semenov, S L; Dianov, Evgenii M; Gur'yanov, A N; Khopin, V F

    2007-04-30

    The photoinduced room-temperature-stable increase in the refractive index by {approx}5x10{sup -4} at a wavelength of 1.55 {mu}m was observed in phosphosilicate fibres without their preliminary loading with molecular hydrogen. It is shown that irradiation of preliminary hydrogen-loaded fibres by an ArF laser at 193 nm enhances the efficiency of refractive-index induction by an order of magnitude. The induced-absorption spectra of preforms with a phosphosilicate glass core and optical fibres fabricated from them are studied in a broad spectral range from 150 to 5000 nm. The intense induced-absorption band ({approx}800 cm{sup -1}) at 180 nm is found, which strongly affects the formation of the induced refractive index. The quantum-chemical model of a defect related to this band is proposed. (optical fibres)

  13. Three-body dissociations: The photodissociation of dimethyl sulfoxide at 193 nm

    SciTech Connect

    Blank, D.A.; North, S.W.; Stranges, D.

    1997-04-01

    When a molecule with two equivalent chemical bonds is excited above the threshold for dissociation of both bonds, how the rupture of the two bonds is temporally coupled becomes a salient question. Following absorption at 193 nm dimethyl sulfoxide (CH{sub 3}SOCH{sub 3}) contains enough energy to rupture both C-S bonds. This can happen in a stepwise (reaction 1) or concerted (reaction 2) fashion where the authors use rotation of the SOCH{sub 3} intermediate prior to dissociation to define a stepwise dissociation: (1) CH{sub 3}SOCH{sub 3} {r_arrow} 2CH{sub 3} + SO; (2a) CH{sub 3}SOCH{sub 3} {r_arrow} CH{sub 3} + SOCH{sub 3}; and (2b) SOCH{sub 3} {r_arrow} SO + CH{sub 3}. Recently, the dissociation of dimethyl sulfoxide following absorption at 193 nm was suggested to involve simultaneous cleavage of both C-S bonds on an excited electronic surface. This conclusion was inferred from laser induced fluorescence (LIF) and resonant multiphoton ionization (2+1 REMPI) measurements of the internal energy content in the CH{sub 3} and SO photoproducts and a near unity quantum yield measured for SO. Since this type of concerted three body dissociation is very interesting and a rather rare event in photodissociation dynamics, the authors chose to investigate this system using the technique of photofragment translational spectroscopy at beamline 9.0.2.1. The soft photoionization provided by the VUV undulator radiation allowed the authors to probe the SOCH{sub 3} intermediate which had not been previously observed and provided good evidence that the dissociation of dimethyl sulfoxide primarily proceeds via a two step dissociation, reaction 2.

  14. Polymer and Material Design for Lithography From 50 nm Node to the sub-16 nm Node

    NASA Astrophysics Data System (ADS)

    Trefonas, Peter

    2012-02-01

    Microlithography is one of the technologies which enabled the Information Age. Developing at the intersection of optical physics, polymer science and photochemistry, the need for ever smaller high fidelity patterns to build integrated circuits is currently pushing the technology evolution from 193 nm immersion lithography to extreme ultraviolet lithography (13.5 nm) to alternate patterning technologies such as directed self assembly (DSA) of block copolymers. Essential to the success of this progression is a rapid application of new concepts and materials in polymer science. We will discuss the requirements for 193 immersion lithography and how advanced acrylic random polymers are being designed with chemical amplification functionality to meet these needs. The special requirements of a water immersion lithography led to the invention and rapid commercial application of surface assembled embedded barrier layer polymers. Design of polymers for EUV lithography is having to respond to much different challenges, prominent being the dearth of photons in the exposure step, and the other being how to maximize the efficiency of photoacid production. In parallel, alternative lithographic approaches are being developed using directed self assembly of block copolymers which realize pattern frequency multiplication. We will update with our progress in the applications of polymers designed for DSA.

  15. DNA damage and altered gene expression in cultured human skin fibroblasts exposed to 193-nm excimer laser radiation

    NASA Astrophysics Data System (ADS)

    Samid, Dvorit; Flessate, Denise M.; Miller, Alexandra C.; Rimoldi, Donata

    1990-06-01

    Tissue ablation using 193nm excimer lasers is being considered for a variety of surgical procedures, yet little is known regarding the potential mutagenic risk to human cells. The effects of sublethal doses of radiation on cellular DNA and gene expression have been examined in cultured human skin fibroblasts. Northern blot analysis of mRNA revealed an increase in the levels of the c-f. proto-oncogene, interstitial collagenase, and metallothionein transcripts after laser radiation at either 193nm or 248nm. Similar changes in gene expression have been previously observed in cells treated with different carcinogens, including classical UV light (254nm) and phorbol esters. In contrast to the conventional UV light or laser radiation at 248nm, the 193nm radiation did not cause significant pyrimidine dimer formation, as determined by measurements of unscheduled DNA synthesis. However, both 193nm and 248nm radiation induced micronuclei formation, indicative of chromosome breakage. These data indicate that exposure of actively replicating human skin cells to sublethal doses of 193nm laser radiation may result in molecular changes associated with carcinogenesis.

  16. In die mask overlay control for 14nm double-patterning lithography

    NASA Astrophysics Data System (ADS)

    Chou, William; Cheng, James; Tseng, Alex C. P.; Wu, J. K.; Chang, Chin Kuei; Cheng, Jeffrey; Lee, Adder; Huang, Chain Ting; Peng, N. T.; Hsu, Simon C. C.; Yu, Chun Chi; Lu, Colbert; Yu, Julia; Craig, Peter; Pollock, Chuck; Ham, Young; McMurran, Jeff

    2015-10-01

    According to the ITRS roadmap, semiconductor industry drives the 193nm lithography to its limits, using techniques like Double Pattern Technology (DPT), Source Mask Optimization (SMO) and Inverse Lithography Technology (ILT). In terms of considering the photomask metrology, full in-die measurement capability is required for registration and overlay control with challenging specifications for repeatability and accuracy. Double patterning using 193nm immersion lithography has been adapted as the solution to enable 14nm technology nodes. The overlay control is one of the key figures for the successful realization of this technology. In addition to the various error contributions from the wafer scanner, the reticles play an important role in terms of considering lithographic process contributed errors. Accurate pattern placement of the features on reticles with a registration error below 4nm is mandatory to keep overall photomask contributions to overlay of sub 20nm logic within the allowed error budget. In this paper, we show in-die registration errors using 14nm DPT product masks, by measuring in-die overlay patterns comparing with regular registration patterns. The mask measurements are used to obtain an accurate model to predict mask contribution on wafer overlay of double patterning technology.

  17. An AC phase measuring interferometer for measuring dn/dT of fused silica and calcium fluoride at 193 nm

    SciTech Connect

    Shagam, R.N.

    1998-09-01

    A novel method for the measurement of the change in index of refraction vs. temperature (dn/dT) of fused silica and calcium fluoride at the 193 nm wavelength has been developed in support of thermal modeling efforts for the development of 193 nm-based photolithographic exposure tools. The method, based upon grating lateral shear interferometry, uses a transmissive linear grating to divide a 193 nm laser beam into several beam paths by diffraction which propagate through separate identical material samples. One diffracted order passing through one sample overlaps the undiffracted beam from a second sample and forms interference fringes dependent upon the optical path difference between the two samples. Optical phase delay due to an index change from heating one of the samples causes the interference fringes to change sinusoidally with phase. The interferometer also makes use of AC phase measurement techniques through lateral translation of the grating. Results for several samples of fused silica and calcium fluoride are demonstrated.

  18. Photodissociation of the Propargyl (C3D3) Radicals at 248 nm and 193 nm

    SciTech Connect

    Neumark., D.M.; Crider, P.E.; Castiglioni, L.; Kautzman, K.K.

    2009-01-21

    The photodissociation of perdeuterated propargyl (D{sub 2}CCCD) and propynyl (D{sub 3}CCC) radicals was investigated using fast beam photofragment translational spectroscopy. Radicals were produced from their respective anions by photodetachment at 540 nm and 450 nm (below and above the electron affinity of propynyl). The radicals were then photodissociated by 248 nm or 193 nm light. The recoiling photofragments were detected in coincidence with a time- and position-sensitive detector. Three channels were observed: D{sub 2} loss, CD + C{sub 2}D{sub 2}, and CD{sub 3} + C{sub 2}. Obervation of the D loss channel was incompatible with this experiment and was not attempted. Our translational energy distributions for D{sub 2} loss peaked at nonzero translational energy, consistent with ground state dissociation over small (< 1 eV) exit barriers with respect to separated products. Translational energy distributions for the two heavy channels peaked near zero kinetic energy, indicating dissociation on the ground state in the absence of exit barriers.

  19. Hydrogen atom formation from the photodissociation of water ice at 193 nm.

    PubMed

    Yabushita, Akihiro; Hashikawa, Yuichi; Ikeda, Atsushi; Kawasaki, Masahiro; Tachikawa, Hiroto

    2004-03-15

    The TOF spectra of photofragment hydrogen atoms from the 193 nm photodissociation of amorphous ice at 90-140 K have been measured. The spectra consist of both a fast and a slow components that are characterized by average translational energies of 2k(B)T(trans)=0.39+/-0.04 eV (2300+/-200 K) and 0.02 eV (120+/-20 K), respectively. The incident laser power dependency of the hydrogen atom production suggests one-photon process. The electronic excitation energy of a branched cluster, (H(2)O)(6+1), has been theoretically calculated, where (H(2)O)(6+1) is a (H(2)O)(6) cyclic cluster attached by a water molecule with the hydrogen bond. The photoabsorption of this branched cluster is expected to appear at around 200 nm. The source of the hydrogen atoms is attributed to the photodissociation of the ice surface that is attached by water molecules with the hydrogen bond. Atmospheric implications are estimated for the photodissociation of the ice particles (Noctilucent clouds) at 190-230 nm in the region between 80 and 85 km altitude.

  20. Photodissociation of CF 3Br at 193 nm: evidence for a distorted dissociation pathway

    NASA Astrophysics Data System (ADS)

    Thelen, M.-A.; Felder, P.

    1996-03-01

    The photodissociation of CF 3Br at 193 nm has been studied by photofragment translational spectroscopy. The primary dissociation step leads to the formation of CF 3 radicals and Br atoms in the electronic ground state and in the spin-orbit excited state, with relative quantum yields φ( Br) = 0.47 ± 0.05 and φ( Br∗) = 0.53 ∓ 0.05 , respectively. At higher laser fluences the slowest and internally hottest CF 3 radicals undergo photoinduced secondary dissociation to CF 2 + F. The anisotropy parameters derived from measurements with a polarized photolysis laser are β( Br) = 1.8 ± 0.2 and β( Br∗) = 0.7 ± 0.3 . The experimental results are discussed in terms of a model that involves the initial excitation of two repulsive electronic states 3Q 0 and 1Q 1 via transitions polarized parallel and perpendicular to the CBr bond, respectively. From the observed β parameters it is concluded that in roughly two thirds of the molecules dissociation proceeds via a distorted geometry in which the molecular symmetry C 3v is reduced to C s through the effect of e-type bending vibrations.

  1. A new look at the photodissociation of methyl iodide at 193 nm

    NASA Astrophysics Data System (ADS)

    Xu, Hong; Pratt, S. T.

    2013-12-01

    A new measurement of the photodissociation of CH3I at 193 nm is reported in which we use a combination of vacuum ultraviolet photoionization and velocity map ion imaging. The iodine photofragments are probed by single-photon ionization at photon energies above and below the photoionization threshold of I(2P3/2). The relative I(2P3/2) and I*(2P1/2) photoionization cross sections are determined at these wavelengths by using the known branching fractions for the photodissociation at 266 nm. Velocity map ion images indicate that the branching fraction for I(2P3/2) atoms is non-zero, and yield a value of 0.07 ± 0.01. Interestingly, the translational energy distribution extracted from the image shows that the translational energy of the I(2P3/2) fragments is significantly smaller than that of the I*(2P1/2) atoms. This observation indicates the internal rotational/vibrational energy of the CH3 co-fragment is very high in the I(2P3/2) channel. The results can be interpreted in a manner consistent with the previous measurements, and provide a more complete picture of the dissociation dynamics of this prototypical molecule.

  2. A new look at the photodissociation of methyl iodide at 193 nm

    SciTech Connect

    Xu, Hong; Pratt, S. T.

    2013-12-07

    A new measurement of the photodissociation of CH{sub 3}I at 193 nm is reported in which we use a combination of vacuum ultraviolet photoionization and velocity map ion imaging. The iodine photofragments are probed by single-photon ionization at photon energies above and below the photoionization threshold of I({sup 2}P{sub 3/2}). The relative I({sup 2}P{sub 3/2}) and I{sup *}({sup 2}P{sub 1/2}) photoionization cross sections are determined at these wavelengths by using the known branching fractions for the photodissociation at 266 nm. Velocity map ion images indicate that the branching fraction for I({sup 2}P{sub 3/2}) atoms is non-zero, and yield a value of 0.07 ± 0.01. Interestingly, the translational energy distribution extracted from the image shows that the translational energy of the I({sup 2}P{sub 3/2}) fragments is significantly smaller than that of the I{sup *}({sup 2}P{sub 1/2}) atoms. This observation indicates the internal rotational/vibrational energy of the CH{sub 3} co-fragment is very high in the I({sup 2}P{sub 3/2}) channel. The results can be interpreted in a manner consistent with the previous measurements, and provide a more complete picture of the dissociation dynamics of this prototypical molecule.

  3. 193 nm Ultraviolet Photodissociation Mass Spectrometry for Phosphopeptide Characterization in the Positive and Negative Ion Modes.

    PubMed

    Robinson, Michelle R; Taliaferro, Juliana M; Dalby, Kevin N; Brodbelt, Jennifer S

    2016-08-01

    Advances in liquid chromatography tandem mass spectrometry (LC-MS/MS) have permitted phosphoproteomic analysis on a grand scale, but ongoing challenges specifically associated with confident phosphate localization continue to motivate the development of new fragmentation techniques. In the present study, ultraviolet photodissociation (UVPD) at 193 nm is evaluated for the characterization of phosphopeptides in both positive and negative ion modes. Compared to the more standard higher energy collisional dissociation (HCD), UVPD provided more extensive fragmentation with improved phosphate retention on product ions. Negative mode UVPD showed particular merit for detecting and sequencing highly acidic phosphopeptides from alpha and beta casein, but was not as robust for larger scale analysis because of lower ionization efficiencies in the negative mode. HeLa and HCC70 cell lysates were analyzed by both UVPD and HCD. While HCD identified more phosphopeptides and proteins compared to UVPD, the unique matches from UVPD analysis could be combined with the HCD data set to improve the overall depth of coverage compared to either method alone. PMID:27425180

  4. Product channels in the 193-nm photodissociation of HCNO (fulminic acid)

    NASA Astrophysics Data System (ADS)

    Feng, Wenhui; Hershberger, John F.

    2016-06-01

    IR diode laser spectroscopy was used to detect the products of HCNO (fulminic acid) photolysis at 193 nm. Six product channels are energetically possible at this photolysis wavelength: O + HCN, H + NCO/CNO, CN + OH, CO + NH, NO + CH and HNCO. In some experiments, isotopically labeled 15N18O, C2D6 or C6H12 reagents were included into the photolysis mixture in order to suppress and/or redirect possible secondary reactions. HCN, OC18O, 15N15NO, CO, DCN and HNCO molecules were detected upon laser photolysis of HCNO/reagents/buffer gas mixtures. Analysis of the yields of product molecules leads to the following photolysis quantum yields: ϕ1a (O + HCN) = 0.38 ± 0.04, ϕ1b (H + (NCO)) = 0.07 ± 0.02, ϕ1c (CN + OH) = 0.24 ± 0.03, ϕ1d (CO + NH(a1Δ)) < 0.22 ± 0.1, ϕ1e (HNCO) = 0.02 ± 0.01 and ϕ1f (CH + NO) = 0.21 ± 0.1, respectively.

  5. Photolysis of Pure Solid O3 and O2 Films at 193nm

    NASA Technical Reports Server (NTRS)

    Raut, U.; Loeffler, M. J.; Fama, M.; Baragiola, R. A.

    2011-01-01

    We studied quantitatively the photochemistry of solid O3 and O2 films at 193 nm and 22 K with infrared spectroscopy and microgravimetry. Photolysis of pure ozone destroyed O3, but a small amount of ozone remained in the film at high fluence. Photolysis of pure O2 produced O3 in an amount that increased with photon fluence to a stationary level. For both O2 and O3 films, the O3:O2 ratio at large fluences is ?0.07, about two orders of magnitude larger than those obtained in gas phase photolysis. This enhancement is attributed to the increased photodissociation of O2 due to photoabsorption by O2 dimers, a process significant at solid-state densities. We obtain initial quantum yield for ozone synthesis from solid oxygen, phi (O3) = 0.24 0.06, and quantum yields for destruction of O3 and O2 in their parent solids, phi(-O3) = 1.0 0.2 and phi(-O2) = 0.36 0.1. Combined with known photoabsorption cross sections, we estimate probabilities for geminate recombination of 0.5 0.1 for O3 fragments and 0.88 0.03 for oxygen atoms from O2 dissociation. Using a single parameter kinetic model, we deduce the ratio of reaction cross sections for an O atom with O2 vs. O3 to be 0.1 0.2. The general good agreement of the model with the data suggests the validity of the central assumption of efficient energy and spin relaxation of photofragments in the solid prior to their reactions with other species.

  6. Photodissociation of vinyl cyanide at 193 nm: Nascent product distributions of the molecular elimination channels

    SciTech Connect

    Wilhelm, Michael J.; Nikow, Matthew; Letendre, Laura; Dai Hailung

    2009-01-28

    The photodissociation dynamics of vinyl cyanide (H{sub 2}CCHCN, acrylonitrile) and deuterated vinyl cyanide (D{sub 2}CCDCN) at 193 nm are examined using time-resolved Fourier transform infrared emission spectroscopy. Prior photofragment translational spectroscopy studies [D. A. Blank et al., J. Chem. Phys. 108, 5784 (1998)] of the dissociation have observed the presence of four main dissociation channels; two molecular and two radical in nature. However, with the exception of a<0.01 quantum yield determined for the CN radical loss channel, the branching ratios of the remaining three elimination channels were not measured. The time-resolved emission spectra, including those from the deuterated samples, revealed the presence of acetylene, hydrogen cyanide (HCN), as well as the energetically less stable isomer hydrogen isocyanide (HNC). Acetylene is found in two distinct energetic distributions, suggesting that both three- and four-centered elimination reactions are occurring significantly in the dissociation. In contrast to prior ab initio studies that have suggested the dominant nature of the three-center elimination of molecular hydrogen (H{sub 2}) and cyanovinylidene (:C=CHCN), we find this reaction channel to be of little importance as there is no evidence to support any significant presence of rovibrationally excited cyanoacetylene. Spectral modeling of the product distributions allows for the first experimental determination of the relative occurrence of the three-centered (resulting in HCN+vinylidene) versus four-centered (HNC+acetylene) elimination channels as 3.34 to 1.00, in contrast to the previously calculated value of 126:1. Rice-Ramsperger-Kassel-Marcus analysis depicts that the transition state energy of the four-centered reaction should be about 10 kcal mole{sup -1} lower than the three-centered reaction.

  7. Dynamics of ions produced by laser ablation of several metals at 193 nm

    SciTech Connect

    Baraldi, G.; Perea, A.; Afonso, C. N.

    2011-02-15

    This work reports the study of ion dynamics produced by ablation of Al, Cu, Ag, Au, and Bi targets using nanosecond laser pulses at 193 nm as a function of the laser fluence from threshold up to 15 J cm{sup -2}. An electrical (Langmuir) probe has been used for determining the ion yield as well as kinetic energy distributions. The results clearly evidence that ablation of Al shows unique features when compared to other metals. The ion yield both at threshold (except for Al, which shows a two-threshold-like behavior) and for a fixed fluence above threshold scale approximately with melting temperature of the metal. Comparison of the magnitude of the yield reported in literature using other wavelengths allows us to conclude its dependence with wavelength is not significant. The evolution of the ion yield with fluence becomes slower for fluences above 4-5 J cm{sup -2} with no indication of saturation suggesting that ionization processes in the plasma are still active up to 15 J cm{sup -2} and production of multiple-charged ions are promoted. This dependence is mirrored in the proportion of ions with kinetic energies higher than 200 eV. This proportion is not significant around threshold fluence for all metals except for Al, which is already 20%. The unique features of Al are discussed in terms of the energy of laser photons (6.4 eV) that is enough to induce direct photoionization from the ground state only in the case of this metal.

  8. Photoinitiated decomposition of substituted ethylenes: The photodissociation of vinyl chloride and acrylonitrile at 193 nm

    SciTech Connect

    Blank, D.A.; Suits, A.G.; Lee, Y.T.

    1997-04-01

    Ethylene and its substituted analogues (H{sub 2}CCHX) are important molecules in hydrogen combustion. As the simplest {pi}-bonded hydrocarbons these molecules serve as prototypical systems for understanding the decomposition of this important class of compounds. The authors have used the technique of photofragment translational spectroscopy at beamline 9.0.2.1 to investigate the dissociation of vinyl chloride (X=Cl) and acrylonitrile (X=CN) following absorption at 193 nm. The technique uses a molecular beam of the reactant seeded in helium which is crossed at 90 degrees with the output of an excimer laser operating on the ArF transition, 193.3 nm. The neutral photoproducts which recoil out of the molecular beam travel 15.1 cm where they are photoionized by the VUV undulator radiation, mass selected, and counted as a function of time. The molecular beam source is rotatable about the axis of the dissociation laser. The authors have directly observed all four of the following dissociation channels for both systems: (1) H{sub 2}CCHX {r_arrow} H + C{sub 2}H{sub 2}X; (2) H{sub 2}CCHX {r_arrow} X + C{sub 2}H{sub 3}; (3) H{sub 2}CCHX {r_arrow} H{sub 2} + C{sub 2}HX; and (4) H{sub 2}CCHX {r_arrow} HX + C{sub 2}H{sub 2}. They measured translational energy distributions for all of the observed channels and measured the photoionization onset for many of the photoproducts which provided information about their chemical identity and internal energy content. In the case of acrylonitrile, selective product photoionization provided the ability to discriminate between channels 2 and 4 which result in the same product mass combination.

  9. Patterning strategy for low-K1 lithography

    NASA Astrophysics Data System (ADS)

    Hwang, David H.; Cheng, Wen-Hao

    2004-08-01

    Moore's law has been guiding the semiconductor industry for four decades. Lithography is the key enabler to keep the industry on the technology treadmill. Lithographers have been facing unprecedented challenges during last five years to keep the technology on the technology treadmill by developing various kinds of resolution enhancement techniques (RETs). In low K1 regime, co-optimization of design, layout mask, OPC, lithography and etching is the primary strategy to deliver a production-worthy patterning solution. Optical shrink is not a trivial task anymore. Intel always pursues parallel patterning techniques based on the dual exposure wavelength patterning strategy. While EUVL is the preferred patterning solution for 32nm node, 193nm immersion lithography with super high NA illumination is one of the parallel patterning strategies. The effects of polarization at super high NA illumination on mask technology, such as lens reduction ratio, blank absorber thickness and image imbalance correction, and restriction on design layout are addressed in this paper. Contact patterning is extremely challenging at low K1. Contact shape factor (circularity) which impacts the design rule will be discussed in this paper. Explosion of data file size and mask write time, stringent mask CD control and mask defect disposition are direct consequences of low-K1/high-MEEF (Mask Error Enhancement Factor) lithography. Mask makers alone cannot resolve the challenges in a cost effective manner. A seamless integration solution is a must.

  10. Extending immersion lithography with high-index materials: results of a feasibility study

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Samarakone, Nandasiri; Duesing, Rudiger

    2007-03-01

    In this paper we report the status of our feasibility work on high index immersion. The development of high index fluids (n>1.64) and high index glass materials (n>1.9) is reported. Questions answered are related to the design of a high NA optics immersion system for fluid containment and fluid handling, and to the compatibility of the fluid with ArF resist processes. Optical design and manufacturing challenges are related to the use of high index glass materials such as crystalline LuAG or ceramic Spinel. Progress on the material development will be reviewed. Progress on immersion fluids development has been sustained. Second-generation fluids are available from many suppliers. For the practical use of second-generation fluids in immersion scanners, we have evaluated and tested fluid recycling concepts in combination with ArF radiation of the fluids. Results on the stability of the fluid and the fluid glass interface will be reported. Fluid containment with immersion hood structures under the lens has been evaluated and tested for several scan speeds and various fluids. Experimental results on scan speed limitations will be presented. The application part of the feasibility study includes the imaging of 29nm L/S structures on a 2-beam interference printer, fluid/resist interaction testing with pre- and post-soak testing. Immersion defect testing using a fluid misting setup was also carried out. Results of these application-related experiments will be presented and discussed.

  11. Generation of intense 10-ps, 193-nm pulses using simple distributed feedback dye lasers and an ArF(*) amplifier.

    PubMed

    Hatten, D L; Cui, Y; Iii, W T; Mikes, T; Goldhar, J

    1992-11-20

    A pair of holographic distributed feedback dye lasers is used to generate 10-ps pulses at two selected wavelengths that are mixed in a BBO crystal to produce a pulse ~ 10 ps in duration at 193 nm. This seed pulse is subsequently amplified in an ArF(*) excimer laser to an energy of 10-15 mJ with <40 microJ in amplified spontaneous emission. The pulses are nearly transform limited and diffraction limited.

  12. Study of defect verification based on lithography simulation with a SEM system

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Shingo; Fujii, Nobuaki; Kanno, Koichi; Imai, Hidemichi; Hayano, Katsuya; Miyashita, Hiroyuki; Shida, Soichi; Murakawa, Tsutomu; Kuribara, Masayuki; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hara, Daisuke; Pang, Linyong

    2015-07-01

    In a Photomask manufacturing process, mask defect inspection is an increasingly important topic for 193nm optical lithography. Further extension of 193nm optical lithography to the next technology nodes, staying at a maximum numerical aperture (NA) of 1.35, pushes lithography to its utmost limits. This extension from technologies like ILT and SMO requires more complex mask patterns. In mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask features. One of the solutions is lithography simulation like AIMS. An issue with AIMS, however, is the low throughput of measurement, analysis etc.

  13. E-beam to complement optical lithography for 1D layouts

    NASA Astrophysics Data System (ADS)

    Lam, David K.; Liu, Enden D.; Smayling, Michael C.; Prescop, Ted

    2011-04-01

    The semiconductor industry is moving to highly regular designs, or 1D gridded layouts, to enable scaling to advanced nodes, as well as improve process latitude, chip size and chip energy consumption. The fabrication of highly regular ICs is straightforward. Poly and metal layers are arranged into 1D layouts. These 1D layouts facilitate a two-step patterning approach: a line-creation step, followed by a line-cutting step, to form the desired IC pattern (See Figure 1). The first step, line creation, can be accomplished with a variety of lithography techniques including 193nm immersion (193i) and Self-Aligned Double Patterning (SADP). It appears feasible to create unidirectional parallel lines to at least 11 nm half-pitch, with two applications of SADP for pitch division by four. Potentially, this step can also be accomplished with interference lithography or directed self assembly in the future. The second step, line cutting, requires an extremely high-resolution lithography technique. At advanced nodes, the only options appear to be the costly quadruple patterning with 193i, or EUV or E-Beam Lithography (EBL). This paper focuses on the requirements for a lithography system for "line cutting", using EBL to complement Optical. EBL is the most cost-effective option for line cutting at advanced nodes for HVM.

  14. The ArF laser for the next-generation multiple-patterning immersion lithography supporting green operations

    NASA Astrophysics Data System (ADS)

    Ishida, Keisuke; Ohta, Takeshi; Miyamoto, Hirotaka; Kumazaki, Takahito; Tsushima, Hiroaki; Kurosu, Akihiko; Matsunaga, Takashi; Mizoguchi, Hakaru

    2016-03-01

    Multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy tighter leading edge device requirements. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. Especially, the dependence on rare gases, such as Neon and Helium, is becoming a critical issue for high volume manufacturing process. The new ArF excimer laser, GT64A has been developed to cope with the reduction of operational costs, the prevention against rare resource shortage and the improvement of device yield in multiple-patterning lithography. GT64A has advantages in efficiency and stability based on the field-proven injection-lock twin-chamber platform (GigaTwin platform). By the combination of GigaTwin platform and the advanced gas control algorithm, the consumption of rare gases such as Neon is reduced to a half. And newly designed Line Narrowing Module can realize completely Helium free operation. For the device yield improvement, spectral bandwidth stability is important to increase image contrast and contribute to the further reduction of CD variation. The new spectral bandwidth control algorithm and high response actuator has been developed to compensate the offset due to thermal change during the interval such as the period of wafer exchange operation. And REDeeM Cloud™, new monitoring system for managing light source performance and operations, is on-board and provides detailed light source information such as wavelength, energy, E95, etc.

  15. Improving vacuum-UV (VUV) photolysis of organic compounds in water with a phosphor converted xenon excimer lamp emitting at 193 nm.

    PubMed

    Schulze-Hennings, U; Pötschke, L; Wietor, C; Bringmann, S; Braun, N; Hayashi, D; Linnemann, V; Pinnekamp, J

    2016-01-01

    A novel vacuum ultraviolet excimer lamp emitting light at 193 nm was used to investigate the degradation of organic micropollutants in ultrapure water and wastewater treatment plant (WWTP) effluent. Overall, light at 193 nm proved to be efficient to degrade the investigated micropollutants (diclofenac, diatrizoic acid, sulfamethoxazole). Experiments with WWTP effluent proved the ability of radiation at 193 nm to degrade micropollutants which are hardly removed with commonly used oxidation technologies like ozonation (diatrizoic acid, ethylenediaminetetraacetic acid, perfluorooctanoic acid, and perfluorooctanesulfonic acid). PMID:27533863

  16. The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Neutral atomic zinc and oxygen emission

    SciTech Connect

    Kahn, E. H.; Langford, S. C.; Dickinson, J. T.; Boatner, Lynn A

    2013-01-01

    We report mass-resolved time-of-flight measurements of neutral particles from the surface of single-crystal ZnO during pulsed 193-nm irradiation at laser fluences below the threshold for avalanche breakdown. The major species emitted are atomic Zn and O. We examine the emissions of atomic Zn as a function of laser fluence and laser exposure. Defects at the ZnO surface appear necessary for the detection of these emissions. Our results suggest that the production of defects is necessary to explain intense sustained emissions at higher fluence. Rapid, clean surface etching and high atomic zinc kinetic energies seen at higher laser fluences are also discussed.

  17. Statistical Examination of the a and a + 1 Fragment Ions from 193 nm Ultraviolet Photodissociation Reveals Local Hydrogen Bonding Interactions

    NASA Astrophysics Data System (ADS)

    Morrison, Lindsay J.; Rosenberg, Jake A.; Singleton, Jonathan P.; Brodbelt, Jennifer S.

    2016-09-01

    Dissociation of proteins and peptides by 193 nm ultraviolet photodissociation (UVPD) has gained momentum in proteomic studies because of the diversity of backbone fragments that are produced and subsequent unrivaled sequence coverage obtained by the approach. The pathways that form the basis for the production of particular ion types are not completely understood. In this study, a statistical approach is used to probe hydrogen atom elimination from a + 1 radical ions, and different extents of elimination are found to vary as a function of the identity of the C-terminal residue of the a product ions and the presence or absence of hydrogen bonds to the cleaved residue.

  18. Experimental demonstration of line-width modulation in plasmonic lithography using a solid immersion lens-based active nano-gap control

    SciTech Connect

    Lee, Won-Sup; Kim, Taeseob; Choi, Guk-Jong; Lim, Geon; Joe, Hang-Eun; Gang, Myeong-Gu; Min, Byung-Kwon; Park, No-Cheol; Moon, Hyungbae; Kim, Do-Hyung; Park, Young-Pil

    2015-02-02

    Plasmonic lithography has been used in nanofabrication because of its utility beyond the diffraction limit. The resolution of plasmonic lithography depends on the nano-gap between the nanoaperture and the photoresist surface—changing the gap distance can modulate the line-width of the pattern. In this letter, we demonstrate solid-immersion lens based active non-contact plasmonic lithography, applying a range of gap conditions to modulate the line-width of the pattern. Using a solid-immersion lens-based near-field control system, the nano-gap between the exit surface of the nanoaperture and the media can be actively modulated and maintained to within a few nanometers. The line-widths of the recorded patterns using 15- and 5-nm gaps were 47 and 19.5 nm, respectively, which matched closely the calculated full-width at half-maximum. From these results, we conclude that changing the nano-gap within a solid-immersion lens-based plasmonic head results in varying line-width patterns.

  19. Photodissociation dynamics of the methyl perthiyl radical at 248 and 193 nm using fast-beam photofragment translational spectroscopy

    NASA Astrophysics Data System (ADS)

    Harrison, Aaron W.; Ryazanov, Mikhail; Sullivan, Erin N.; Neumark, Daniel M.

    2016-07-01

    The photodissociation dynamics of the methyl perthiyl radical (CH3SS) have been investigated using fast-beam coincidence translational spectroscopy. Methyl perthiyl radicals were produced by photodetachment of the CH3SS- anion followed by photodissociation at 248 nm (5.0 eV) and 193 nm (6.4 eV). Photofragment mass distributions and translational energy distributions were measured at each dissociation wavelength. Experimental results show S atom loss as the dominant (96%) dissociation channel at 248 nm with a near parallel, anisotropic angular distribution and translational energy peaking near the maximal energy available to ground state CH3S and S fragments, indicating that the dissociation occurs along a repulsive excited state. At 193 nm, S atom loss remains the major fragmentation channel, although S2 loss becomes more competitive and constitutes 32% of the fragmentation. The translational energy distributions for both channels are very broad at this wavelength, suggesting the formation of the S2 and S atom products in several excited electronic states.

  20. Photodissociation dynamics of the methyl perthiyl radical at 248 and 193 nm using fast-beam photofragment translational spectroscopy.

    PubMed

    Harrison, Aaron W; Ryazanov, Mikhail; Sullivan, Erin N; Neumark, Daniel M

    2016-07-14

    The photodissociation dynamics of the methyl perthiyl radical (CH3SS) have been investigated using fast-beam coincidence translational spectroscopy. Methyl perthiyl radicals were produced by photodetachment of the CH3SS(-) anion followed by photodissociation at 248 nm (5.0 eV) and 193 nm (6.4 eV). Photofragment mass distributions and translational energy distributions were measured at each dissociation wavelength. Experimental results show S atom loss as the dominant (96%) dissociation channel at 248 nm with a near parallel, anisotropic angular distribution and translational energy peaking near the maximal energy available to ground state CH3S and S fragments, indicating that the dissociation occurs along a repulsive excited state. At 193 nm, S atom loss remains the major fragmentation channel, although S2 loss becomes more competitive and constitutes 32% of the fragmentation. The translational energy distributions for both channels are very broad at this wavelength, suggesting the formation of the S2 and S atom products in several excited electronic states.

  1. 193 nm Ultraviolet Photodissociation Mass Spectrometry of Tetrameric Protein Complexes Provides Insight into Quaternary and Secondary Protein Topology.

    PubMed

    Morrison, Lindsay J; Brodbelt, Jennifer S

    2016-08-31

    Protein-protein interfaces and architecture are critical to the function of multiprotein complexes. Mass spectrometry-based techniques have emerged as powerful strategies for characterization of protein complexes, particularly for heterogeneous mixtures of structures. In the present study, activation and dissociation of three tetrameric protein complexes (streptavidin, transthyretin, and hemoglobin) in the gas phase was undertaken by 193 nm ultraviolet photodissociation (UVPD) for the characterization of higher order structure. High pulse energy UVPD resulted in the production of dimers and low charged monomers exhibiting symmetrical charge partitioning among the subunits (the so-called symmetrical dissociation pathways), consistent with the subunit organization of the complexes. In addition, UVPD promoted backbone cleavages of the monomeric subunits, the abundances of which corresponded to the more flexible loop regions of the proteins. PMID:27480400

  2. Collision-induced desorption in 193-nm photoinduced reactions in (O{sub 2}+CO) adlayers on Pt(112)

    SciTech Connect

    Han Song; Ma Yunsheng; Matsushima, Tatsuo

    2005-09-01

    The spatial distribution of desorbing O{sub 2} and CO{sub 2} was examined in 193-nm photoinduced reactions in O{sub 2}+CO adlayers on stepped Pt (112)=[(s)3(111)x(001)]. The O{sub 2} desorption collimated in inclined ways in the plane along the surface trough, confirming the hot-atom collision mechanism. In the presence of CO(a), the product CO{sub 2} desorption also collimated in an inclined way, whereas the inclined O{sub 2} desorption was suppressed. The inclined O{sub 2} and CO{sub 2} desorption is explained by a common collision-induced desorption model. At high O{sub 2} coverage, the CO{sub 2} desorption collimated closely along the (111) terrace normal.

  3. Photolytic decomposition of adsorbed tellurium and cadmium alkyl species at 295 K upon 193 nm photon irradiation

    NASA Astrophysics Data System (ADS)

    Stinespring, C. D.; Freedman, A.

    1988-06-01

    The photolytic decomposition of adspecies formed by the adsorption of tellurium and cadmium alkyls at 295 K under ultrahigh-vacuum conditions has been studied using x-ray photoelectron spectroscopy. Dimethyl tellurium adsorbed at submonolayer coverages on a polycrystalline gold substrate has been observed to undergo nearly quantitative photolytic decomposition at 193 nm to form metallic tellurium. The hydrocarbon photofragments produced in the decomposition lead to negligible carbon contamination on the gold surface. Dimethyl cadmium adsorbed on amorphous SiO2 both desorbs and decomposes to form the metal adspecies. In this case, most of the carbon remains as hydrocarbon and carbidic contaminants. Monomethyl adspecies of both metals formed on Si(100) and GaAs(100) surfaces are inactive with respect to decomposition at the low fluences (0.25 mJ cm-2) used in these experiments; however, substantial desorption is observed.

  4. Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

    SciTech Connect

    Brihoum, M.; Ramos, R.; Menguelti, K.; Cunge, G.; Pargon, E.; Joubert, O.

    2013-01-07

    HBr plasma treatments are widely used in nanoscale lithographic technologies to increase the plasma etch resistance of 193 nm photoresist masks as well as to decrease their Line Width Roughness (LWR). VUV irradiation of the photoresist is known to play a major role in this process by inducing polymer chains rearrangement and finally LWR reduction. However, in the plasma environment (i.e., with radical and ion bombardment), the interaction layer formed at the resist surface perturbs this mechanism and a lower LWR reduction is achieved compared to VUV only treatment. So far the nature of the interaction layer, its formation mechanism and its relation with the resist pattern LWR were all unclear. In this paper, we show that a graphite-like layer is formed on the resist patterns by the redeposition of carbon-based species originating from the plasma dissociation of outgassed photo-etched resist moieties. We show that the presence of this layer inhibits the LWR minimization and causes an increase in the LWR when it becomes thick enough (i.e., a few nanometers). We present evidences that the difference in the mechanical properties of the graphite-like top layer which coats the resist patterns and the bulk of the resist patterns is correlated to the LWR after plasma treatment. We can conclude that the optimization of an HBr cure process relies on the minimization of the carbon redeposition while keeping a significant VUV light flux and we show that this can be achieved by using pulsed plasma processes.

  5. Surface morphology and subsurface damaged layer of various glasses machined by 193-nm ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Liao, Yunn-shiuan; Chen, Ying-Tung; Chao, Choung-Lii; Liu, Yih-Ming

    2005-01-01

    Owing to the high bonding energy, most of the glasses are removed by photo-thermal rather than photo-chemical effect when they are ablated by the 193 or 248nm excimer lasers. Typically, the machined surface is covered by re-deposited debris and the sub-surface, sometimes surface as well, is scattered with micro-cracks introduced by thermal stress generated during the process. This study aimed to investigate the nature and extent of the surface morphology and sub-surface damaged (SSD) layer induced by the laser ablation. The effects of laser parameters such as fluence, shot number and repetition rate on the morphology and SSD were discussed. An ArF excimer laser (193 nm) was used in the present study to machine glasses such as soda-lime, Zerodur and BK-7. It is found that the melt ejection and debris deposition tend to pile up higher and become denser in structure under a higher energy density, repetition rate and shot number. There are thermal stress induced lateral cracks when the debris covered top layer is etched away. Higher fluence and repetition rate tend to generate more lateral and median cracks which propagate into the substrate. The changes of mechanical properties of the SSD layer were also investigated.

  6. Sub-20nm hybrid lithography using optical, pitch-division, and e-beam

    NASA Astrophysics Data System (ADS)

    Belledent, J.; Smayling, M.; Pradelles, J.; Pimenta-Barros, P.; Barnola, S.; Mage, L.; Icard, B.; Lapeyre, C.; Soulan, S.; Pain, L.

    2012-03-01

    A roadmap extending far beyond the current 22nm CMOS node has been presented several times. [1] This roadmap includes the use of a highly regular layout style which can be decomposed into "lines and cuts."[2] The "lines" can be done with existing optical immersion lithography and pitch division with self-aligned spacers.[3] The "cuts" can be done with either multiple exposures using immersion lithography, or a hybrid solution using either EUV or direct-write ebeam.[ 4] The choice for "cuts" will be driven by the availability of cost-effective, manufacturing-ready equipment and infrastructure. Optical lithography improvements have enabled scaling far beyond what was expected; for example, soft x-rays (aka EUV) were in the semiconductor roadmap as early as 1994 since optical resolution was not expected for sub-100nm features. However, steady improvements and innovations such as Excimer laser sources and immersion photolithography have allowed some manufacturers to build 22nm CMOS SOCs with single-exposure optical lithography. With the transition from random complex 2D shapes to regular 1D-patterns at 28nm, the "lines and cuts" approach can extend CMOS logic to at least the 7nm node. The spacer double patterning for lines and optical cuts patterning is expected to be used down to the 14nm node. In this study, we extend the scaling to 18nm half-pitch which is approximately the 10-11nm node using spacer pitch division and complementary e-beam lithography. For practical reasons, E-Beam lithography is used as well to expose the "mandrel" patterns that support the spacers. However, in a production mode, it might be cost effective to replace this step by a standard 193nm exposure and applying the spacer technique twice to divide the pitch by 3 or 4. The Metal-1 "cut" pattern is designed for a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops. Since the final conductor is defined by a Damascene process, the "cut" patterns become islands

  7. Laser-written binary OMOG photomasks for high-volume non-critical 193-nm photolithographic layers

    NASA Astrophysics Data System (ADS)

    Rivière, Rémi; Gopalakrishnan, Selvi; Mazur, Martin; Öner, Nevzat; Mühle, Sven; Seltmann, Rolf

    2014-10-01

    Photomasks are key elements of photolithographic processes, implying that their degradation must be reliably monitored and strongly mitigated. Indeed, the photo-induced oxidation of Cr in Cr On Glass (COG) photomasks and the concomitant electrostatic-field migration present in high-volume production using 193-nm photolithographic scanners severely deteriorate the pattern transfer quality, therefore limiting the lifetime of these reticles. To moderate this effect, Opaque MoSi On Glass (OMOG) photomasks, significantly less prone to such degradation, are currently being massively used in leading-edge microfabrication flows. The type of mask fabrication process normally used involving ebeam writing is however not adapted for non-critical photolithographic layers that do not yet benefit from its inherent performances but still suffer from its high cost and its long processing time. It is therefore proposed in this work to combine the simplicity of laser writing and the resistance of MoSi to degradation by using laser-written binary OMOG photomasks for the non-critical layers (e.g. ion-implantation) of a 28-nm production flow. To evaluate one of this new reticle, its pattern transfer fidelity is compared to the one of a laser-written binary COG mask already qualified for production from a photolithographic quality perspective, both masks being treated using the same optical proximity correction (OPC) model. Dispersive and dissipative properties, critical dimension uniformity, pattern linearity and pattern proximity are directly measured on wafer level, subsequently revealing that both photomasks match in terms of OPC parameters. The utilized OPC model is moreover proven robust against the use of both types of masks, consequently making the conversion from COG to OMOG particularly simple. These experimental results therefore qualify the new mask fabrication type and pave the way for a major utilization in high-volume production.

  8. Advances with the new AIMS fab 193 2nd generation: a system for the 65 nm node including immersion

    NASA Astrophysics Data System (ADS)

    Zibold, Axel M.; Poortinga, E.; Doornmalen, H. v.; Schmid, R.; Scherubl, T.; Harnisch, W.

    2005-06-01

    The Aerial Image Measurement System, AIMS, for 193nm lithography emulation is established as a standard for the rapid prediction of wafer printability for critical structures including dense patterns and defects or repairs on masks. The main benefit of AIMS is to save expensive image qualification consisting of test wafer exposures followed by wafer CD-SEM resist or wafer analysis. By adjustment of numerical aperture (NA), illumination type and partial coherence (σ) to match any given stepper/ scanner, AIMS predicts the printability of 193nm reticles such as binary with, or without OPC and phase shifting. A new AIMS fab 193 second generation system with a maximum NA of 0.93 is now available. Improvements in field uniformity, stability over time, measurement automation and higher throughput meet the challenging requirements of the 65nm node. A new function, "Global CD Map" can be applied to automatically measure and analyse the global CD uniformity of repeating structures across a reticle. With the options of extended depth-of-focus (EDOF) software and the upcoming linear polarisation capability in the illumination the new AIMS fab 193 second generation system is able to cover both dry and immersion requirements for NA < 1. Rigorous simulations have been performed to study the effects of polarisation for imaging by comparing the aerial image of the AIMS to the resist image of the scanner.

  9. 7nm logic optical lithography with OPC-Lite

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.; Tsujita, Koichiro; Yaegashi, Hidetami; Axelrad, Valery; Nakayama, Ryo; Oyama, Kenichi; Yamauchi, Shohei; Ishii, Hiroyuki; Mikami, Koji

    2015-03-01

    The CMOS logic 22nm node was the last one done with single patterning. It used a highly regular layout style with Gridded Design Rules (GDR). Smaller nodes have required the same regular layout style but with multiple patterning for critical layers. A "line/cut" approach is being used to achieve good pattern fidelity and process margin.[1] As shown in Fig. 1, even with "line" patterns, pitch division will eventually be necessary. For the "cut" pattern, Design-Source-Mask Optimization (DSMO) has been demonstrated to be effective at the 20nm node and below.[2,3,4] Single patterning was found to be suitable down to 16nm, while double patterning extended optical lithography for cuts to the 10-12nm nodes. Design optimization avoided the need for triple patterning. Lines can be patterned with 193nm immersion with no complex OPC. The final line dimensions can be achieved by applying pitch division by two or four.[5] In this study, we extend the scaling using simplified OPC to the 7nm node for critical FEOL and BEOL layers. The test block is a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops, scaled from previous experiments. Simulation results show that for cuts at 7nm logic dimensions, the gate layer can be done with single patterning whose minimum pitch is 53nm, possibly some of the 1x metal layers can be done with double patterning whose minimum pitch is 53nm, and the contact layer will require triple patterning whose minimum pitch is 68nm. These pitches are less than the resolution limit of ArF NA=1.35 (72nm). However these patterns can be separated by a combination of innovative SMO for less than optical resolution limit and a process trick of hole-repair technique. An example of triple patterning coloring is shown in Fig 3. Fin and local interconnect are created by lines and trims. The number of trim patterns are 3 times (min. pitch=90nm) and twice (min. pitch=120nm), respectively. The small number of masks, large pitches, and

  10. 1x stencil masks fabrication and their use in Low-Energy Electron-beam Proximity Lithography (LEEPL)

    NASA Astrophysics Data System (ADS)

    Behringer, Uwe F. W.

    2004-12-01

    Thirty years ago it was the common believe of most of the lithographer that the limit end for the optical lithography will be at about 1 μm ground rule. So NGL tools were developed to go in the 500nm and 250nm regions. 15 years later the different optical lithography techniques were still alive exposing feature sizes down to 200nm and the NGL tool developer had to move to 100nm and below. Today 100nm features made by optical lithography is world wide a common technique in most of the modern chip manufacturing plants, and feature sizes beyond the used wavelength are state of art. So do we really need NGL or will the optical lithography lives forever? Well, there are already optical system available or will be soon delivered to the manufacturing lines which are able to expose feature sizes down to 70nm and even to 50nm if they use 193nm immersion lithography. But for what price? The optical lithography became extremely expensive. Reticles for the 70nm technology full with OPC structures may cost up to 500 K and an optical reticle set up to 2 Million. So in my understanding the introduction of any NGL technique will only happen if such a technique can demonstrate at least the same performance as the optical lithography but at a lower cost level. The best understood NGLs are the electron beam lithography techniques used in e-beam direct writing tools for the exposure of masks and reticles or e-beam techniques which expose the wafers using masks like E-beam Projection Lithography (EPL) or Low Energy E-beam Proximity Lithography (LEEPL) respectively. Both EPL and LEEPL require a similar mask technique so called stencil masks. The first 1x stencil masks (a silicon wafer with a thin membrane area containing the pattern as physical holes) were developed by IBM Germany more than 25 years ago and perfected in the Advanced Mask Facility (AMF) at IBM Vermont. Today, these 1x stencil masks used for LEEPL are mainly produced by Hoya, DNP, Toppan and NTT-AT in Japan. This paper

  11. Trace element analysis of synthetic mono- and poly-crystalline CaF 2 by ultraviolet laser ablation inductively coupled plasma mass spectrometry at 266 and 193 nm

    NASA Astrophysics Data System (ADS)

    Koch, J.; Feldmann, I.; Hattendorf, B.; Günther, D.; Engel, U.; Jakubowski, N.; Bolshov, M.; Niemax, K.; Hergenröder, R.

    2002-06-01

    The analytical figures of merit for ultraviolet laser ablation-inductively coupled plasma mass spectrometry (UV-LA-ICP-MS) at 266 nm with respect to the trace element analysis of high-purity, UV-transmitting alkaline earth halides are investigated and discussed. Ablation threshold energy density values and ablation rates for mono- and poly-crystalline CaF 2 samples were determined. Furthermore, Pb-, Rb-, Sr-, Ba- and Yb-specific analysis was performed. For these purposes, a pulsed Nd:YAG laser operated at the fourth harmonic of the fundamental wavelength (λ=266 nm) and a double-focusing sector field ICP-MS detector were employed. Depending on the background noise and isotope-specific sensitivity, the detection limits typically varied from 0.7 ng/g for Sr to 7 ng/g in the case of Pb. The concentrations were determined using a glass standard reference material (SRM NIST612). In order to demonstrate the sensitivity of the arrangement described, comparative measurements by means of a commercial ablation system consisting of an ArF excimer laser (λ=193 nm) and a quadrupole-type ICP-MS (ICP-QMS) instrument were carried out. The accuracy of both analyses was in good agreement, whereas ablation at 266 nm and detection using sector-field ICP-MS led to a sensitivity that was one order of magnitude above that obtained at 193 nm with ICP-QMS.

  12. Dynamics of N-OH bond dissociation in cyclopentanone and cyclohexanone oxime at 193 nm: laser-induced fluorescence detection of nascent OH (v'', J'').

    PubMed

    Kawade, Monali N; Saha, Ankur; Upadhyaya, Hari P; Kumar, Awadhesh; Naik, Prakash D

    2010-12-01

    Cyclohexanone oxime (CHO) and cyclopentanone oxime (CPO) in the vapor phase undergo N-OH bond scission upon excitation at 193 nm to produce OH, which was detected state selectively employing laser-induced fluorescence. The measured energy distribution between fragments for both oximes suggests that in CHO the OH produced is mostly vibrationally cold, with moderate rotational excitation, whereas in CPO the OH fragment is also formed in v'' = 1 (~2%). The rotational population of OH (v'' = 0, J'') from CHO is characterized by a rotational temperature of 1440 ± 80 K, whereas the rotational populations of OH (v'' = 0, J'') and OH (v'' = 1, J'') from CPO are characterized by temperatures of 1360 ± 90 K and 930 ± 170 K, respectively. A high fraction of the available energy is partitioned to the relative translation of the fragments with f(T) values of 0.25 and 0.22 for CHO and CPO, respectively. In the case of CHO, the Λ-doublet states of the nascent OH radical are populated almost equally in lower rotational quantum levels N'', with a preference for Π(+) (A') states for higher N''. However, there is no preference for either of the two spin orbit states Π(3/2) and Π(1/2) of OH. The nascent OH product in CPO is equally distributed in both Λ-doublet states of Π(+) (A') and Π(-) (A'') for all N'', but has a preference for the Π(3/2) spin orbit state. Experimental work in combination with theoretical calculations suggests that both CHO and CPO molecules at 193 nm are excited to the S(2) state, which undergoes nonradiative relaxation to the T(2) state. Subsequently, molecules undergo the N-OH bond dissociation from the T(2) state with an exit barrier to produce OH (v'', J'').

  13. Extreme ultraviolet lithography and three dimensional integrated circuit—A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay

    2014-03-01

    Extreme ultraviolet lithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology. Commercial step-and-scan tools for preproduction are installed now with full field capability; however, EUV source power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 200 W in-band power at IF, current tools can supply only approximately 40-55 W. EUVL resist has improved significantly in the last few years, with 13 nm line/space half-pitch resolution being produced with approximately 3-4 nm line width roughness (LWR), but LWR needs 2× improvement. Creating a defect-free EUVL mask is currently an obstacle. Actual adoption of EUVL for 22 nm and beyond technology nodes will depend on the extension of current optical lithography (193 nm immersion lithography, combined with multiple patterning techniques), as well as other methods such as 3D IC. Lithography has been the enabler for IC performance improvement by increasing device density, clock rate, and transistor rate. However, after the turn of the century, IC scaling resulted in short-channel effect, which decreases power efficiency dramatically, so clock frequency almost stopped increasing. Although further IC scaling by lithography reduces gate delay, interconnect delay and memory wall are dominant in determining the IC performance. 3D IC technology is a critical technology today because it offers a reasonable route to further improve IC performance. It increases device density, reduces the interconnect delay, and breaks memory wall with the application of 3D stacking using through silicon via. 3D IC also makes one chip package have more functional diversification than those enhanced only by shrinking the size of the features

  14. Low-loss and flatband silicon-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by ArF-immersion lithography process on a 300-mm SOI wafer

    NASA Astrophysics Data System (ADS)

    Jeong, Seok-Hwan; Shimura, Daisuke; Simoyama, Takasi; Seki, Miyoshi; Yokoyama, Nobuyuki; Ohtsuka, Minoru; Koshino, Keiji; Horikawa, Tsuyoshi; Tanaka, Yu; Morito, Ken

    2014-03-01

    We present flatband, low-loss and low-crosstalk characteristics of Si-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by ArF-immersion lithography process on a 300-mm silicon-on-insulator (SOI) wafer. We theoretically specified why phase controllability over Si-nanowire waveguides is prerequisite to attain desired spectral response, discussing spectral degradation by random phase errors during fabrication process. It was experimentally demonstrated that advanced patterning technology based on ArF-immersion lithography process showed extremely low phase errors even for Si-nanowire channel waveguides. As a result, the device exhibited extremely low loss of <0.2dB and low crosstalk of <-40dB without any external phase compensation. Furthermore, fairly good spectral uniformity for all fabricated devices was found both in intra-dies and inter-dies. The center wavelengths for box-like drop channel responses were distributed within 0.4 nm in the same die. This tendency was kept nearly constant for other dies on the 300-mm SOI wafer. In the case of the inter-die distribution where each die is spaced by ~3cm, the deviation of the center wavelengths was as low as +/-1.8 nm between the dies separated by up to ~15 cm. The spectral superiority was reconfirmed by measuring 25 Gbps modulation signals launched into the device. Clear eye openings were observed as long as the optical signal wavelengths are stayed within the flat-topped passband of the 5th-order CROW. We believe these high-precision fabrication technologies based on 300-mm SOI wafer scale ArF-immersion lithography would be promising for several kinds of WDM multiplexers/demultiplexers having much complicated configurations and requiring much finer phase controllability.

  15. Electron Beam Lithography

    NASA Astrophysics Data System (ADS)

    Harriott, Lloyd R.

    1997-04-01

    Electron beams have played a significant role in semiconductor technology for more than twenty years. Early electron beam machines used a raster scanned beam spot to write patterns in electron-sensitive polymer resist materials. The main application of electron beam lithography has been in mask making. Despite the inherently high spatial resolution and wide process margins of electron beam lithography, the writing rate for semiconductor wafers has been too slow to be economically viable on a large scale. In the late 1970's, variable shape electron beam writing was developed, projecting a rectangular beam whose size can be varied for each "shot" exposure of a particular pattern, allowing some integrated circuits to be made economically where a variety of "customized" patterns are desired. In the cell or block projection electron beam exposure technique, a unit cell of a repetitive pattern is projected repeatedly to increase the level of parallelism. This can work well for highly repetitive patterns such as memory chips but is not well suited to complex varying patterns such as microprocessors. The rapid progress in the performance of integrated circuits has been largely driven by progress in optical lithography, through improvements in lens design and fabrication as well as the use of shorter wavelengths for the exposure radiation. Due to limitations from the opacity of lens and mask materials, it is unlikely that conventional optical printing methods can be used at wavelengths below 193 nm or feature sizes much below 180 nm. One candidate technology for a post-optical era is the Scattering with Angular Limitation Projection Electron-beam Lithography (SCALPEL) approach, which combines the high resolution and wide process latitude inherent in electron beam lithography with the throughput of a parallel projection system. A mask consisting of a low atomic number membrane and a high atomic number pattern layer is uniformly illuminated with high energy (100 ke

  16. Electron stimulated desorption of the metallic substrate at monolayer coverage: Sensitive detection via 193 nm laser photoionization of neutral aluminum desorbed from CH3O/Al(111)

    NASA Astrophysics Data System (ADS)

    Young, C. E.; Whitten, J. E.; Pellin, M. J.; Gruen, D. M.; Jones, P. L.

    A fortuitous overlap between the gain profile of the 193 nm ArF excimer laser and the Al autoionizing transition (sup 2)S(sub 1/2) (512753/cm) yields to the left (sup 2)P(sup 0)J has been exploited in the direct observation of substrate metal atoms in an electron simulated desorption (ESD) process from the monolayer adsorbate system CH3O/Al(111). The identity of the mass 27 photoion was established as Al(+) by (1) isotopic substitution of C-13 in the methanol employed for methoxy formation, and (2) tunable laser scans utilizing the DJ-2 (J = 3/2, 5/2) intermediate levels at approximately 32436/cm and a 248 nm ionization step. An ESD yield of approximately x 10(exp -6) Al atoms/(electron at 1 keV) was established by comparison with a sputtering experiment in the same apparatus. Velocity distributions measured for the desorbed Al species showed some differences in comparison with methoxy velocity data: a slightly lower peak velocity and a significantly less prominent high-velocity component.

  17. EUV lithography imaging using novel pellicle membranes

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan; Vanpaemel, Johannes; Lee, Jae Uk; Adelmann, Christoph; Zahedmanesh, Houman; Huyghebaert, Cedric; Gallagher, Emily E.

    2016-03-01

    EUV mask protection against defects during use remains a challenge for EUV lithography. A stand-off protective membrane - a pellicle - is targeted to prevent yield losses in high volume manufacturing during handling and exposure, just as it is for 193nm lithography. The pellicle is thin enough to transmit EUV exposure light, yet strong enough to remain intact and hold any particles out of focus during exposure. The development of pellicles for EUV is much more challenging than for 193nm lithography for multiple reasons including: high absorption of most materials at EUV wavelength, pump-down sequences in the EUV vacuum system, and exposure to high intensity EUV light. To solve the problems of transmission and film durability, various options have been explored. In most cases a thin core film is considered, since the deposition process for this is well established and because it is the simplest option. The transmission specification typically dictates that membranes are very thin (~50nm or less), which makes both fabrication and film mechanical integrity difficult. As an alternative, low density films (e.g. including porosity) will allow thicker membranes for a given transmission specification, which is likely to improve film durability. The risk is that the porosity could influence the imaging. At imec, two cases of pellicle concepts based on reducing density have been assessed : (1) 3D-patterned SiN by directed self-assembly (DSA), and (2) carbon nanomaterials such as carbon nanotubes (CNT) and carbon nanosheets (CNS). The first case is based on SiN membranes that are 3D-patterned by Directed Self Assembly (DSA). The materials are tested relative to the primary specifications: EUV transmission and film durability. A risk assessment of printing performance is provided based on simulations of scattered energy. General conclusions on the efficacy of various approaches will provided.

  18. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  19. An ice lithography instrument

    NASA Astrophysics Data System (ADS)

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-06-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  20. Hydrogen Migration and Vinylidene Pathway for Formation of Methane in the 193 nm Photodissociation of Propene: CH3CH=CH2 and CD3CD=CD2

    NASA Technical Reports Server (NTRS)

    Zhao, Yi-Lei; Laufer, Allan H.; Halpern, Joshua B.; Fahr, Askar

    2007-01-01

    Photodissociation channels and the final product yields from the 193 nm photolysis of propene-h6 (CH2=CHCH3) and propene-d6 (CD2=CDCD3) have been investigated, employing gas chromatography, mass spectroscopy, and flame ionization (GC/MS/FID) detection methods. The yields of methane as well as butadiene relative to ethane show considerable variations when propene-h6 or propene-d6 are photolyzed. This suggests significant variances in the relative importance of primary photolytic processes and/or secondary radical reactions, occurring subsequent to the photolysis. Theoretical calculations suggest the potential occurrence of an intramolecular dissociation through a mechanism involving vinylidene formation, accompanied by an ethylenic H-migration through the pi-orbitals. This process affects the final yields of methane-h4 versus methane-d4 with respect to other products. The product yields from previous studies of the 193 nm photolysis of methyl vinyl ketone-h6 and -d6 (CH2=CHCOCH3, CD2=CDCOCD3), alternative precursors for generating methyl and vinyl radicals, are compared with the current results for propene.

  1. Combined overlay, focus and CD metrology for leading edge lithography

    NASA Astrophysics Data System (ADS)

    Ebert, Martin; Cramer, Hugo; Tel, Wim; Kubis, Michael; Megens, Henry

    2011-04-01

    and Focus measurements respectively. In addition CD profile information can be measured enabling proximity matching applications. By using a technique [2][3][4] to de-convolve dose and focus based on the profile measurement of a well-characterized process monitor target, we show that the dose and focus signature of a high NA 193nm immersion scanner can be effectively measured and corrected. A similar approach was also taken to address overlay errors using the diffraction based overlay capability [5] of the same metrology tool. We demonstrate the advantage of having a single metrology tool solution, which enables us to reduce dose, focus and overlay variability to their minimum non-correctable signatures. This technique makes use of the high accuracy and repeatability of the YieldStar tool and provides a common reference of scanner setup and user process. Using ASML's YieldStar in combination with ASML scanners, and control solutions allows for a direct link from the metrology tool to the system settings, ensuring that the appropriate system settings can be easily and directly updated.

  2. Preliminary characterisation of new glass reference materials (GSA-1G, GSC-1G, GSD-1G and GSE-1G) by laser ablation-inductively coupled plasma-mass spectrometry using 193 nm, 213 nm and 266 nm wavelengths

    USGS Publications Warehouse

    Guillong, M.; Hametner, K.; Reusser, E.; Wilson, S.A.; Gunther, D.

    2005-01-01

    New glass reference materials GSA-1G, GSC-1G, GSD-1G and GSE-1G have been characterised using a prototype solid state laser ablation system capable of producing wavelengths of 193 nm, 213 nm and 266 nm. This system allowed comparison of the effects of different laser wavelengths under nearly identical ablation and ICP operating conditions. The wavelengths 213 nm and 266 nm were also used at higher energy densities to evaluate the influence of energy density on quantitative analysis. In addition, the glass reference materials were analysed using commercially available 266 nm Nd:YAG and 193 nm ArF excimer lasers. Laser ablation analysis was carried out using both single spot and scanning mode ablation. Using laser ablation ICP-MS, concentrations of fifty-eight elements were determined with external calibration to the NIST SRM 610 glass reference material. Instead of applying the more common internal standardisation procedure, the total concentration of all element oxide concentrations was normalised to 100%. Major element concentrations were compared with those determined by electron microprobe. In addition to NIST SRM 610 for external calibration, USGS BCR-2G was used as a more closely matrix-matched reference material in order to compare the effect of matrix-matched and non matrix-matched calibration on quantitative analysis. The results show that the various laser wavelengths and energy densities applied produced similar results, with the exception of scanning mode ablation at 266 nm without matrix-matched calibration where deviations up to 60% from the average were found. However, results acquired using a scanning mode with a matrix-matched calibration agreed with results obtained by spot analysis. The increased abundance of large particles produced when using a scanning ablation mode with NIST SRM 610, is responsible for elemental fractionation effects caused by incomplete vaporisation of large particles in the ICP.

  3. Mask topography effect in chromeless phase lithography

    NASA Astrophysics Data System (ADS)

    Philipsen, Vicky; Bekaert, Joost; Vandenberghe, Geert; Jonckheere, Rik; Van Den Broeke, Douglas; Socha, Robert

    2004-12-01

    Different types of phase-shift masks (PSM) in combination with the proper illumination condition are widely used to allow 193nm lithography to print ever-decreasing pitches with a sufficient process window. A viable option for the 65nm node is Chromeless Phase Lithography (CPL), which combines a chromeless phase shift mask and 193nm off-axis illumination. It has been demonstrated that CPL has a high flexibility for through pitch imaging. Also concerning mask making CPL masks showed advantages over alternating and attenuated PSM [1]. This paper discusses how the mask quality and its topography influence the imaging performance of CPL. It is shown that mask topography is an important factor for CPL, as the imaging relies also on the quartz depth differences in the mask. The wafer image is sensitive to phase variations induced by the quartz etch depth and the sidewall profile. Their impact is separately studied using rigorous 3D mask electro-magnetic field simulations (Sigma-C Solid-CM). Correlation of experimental results to simulation explains that the observed pitch-dependent tilt in the Bossung curves is mainly related to the 3D character of the mask. In search for a global compensation valid through pitch, the simulation study also evaluates the effect of other contributors such as lens aberrations in the optical system, assist features and half-toning Cr zebra lines in the design. However, as the tilt is inherent to the CPL mask fabrication, a compensation of the Bossung tilt effect can only be obtained for specific combinations of all sources, as will be shown. We concentrate on the imaging of 70nm lines and 100nm contact holes in pitches ranging from dense up to isolated. The wafers are exposed on an ASML PAS5500/1100 ArF scanner working with a 0.75NA projection lens and various types of off-axis illumination. The wafers are evaluated on a top-down CD SEM (KLA-Tencor 8250XR).

  4. Coaxial Lithography

    NASA Astrophysics Data System (ADS)

    Ozel, Tuncay

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowires that can be realized and studied in the laboratory. This thesis focuses on bridging templated electrochemical synthesis and lithography for expanding current synthetic capabilities with respect to materials generality and the ability to tailor two-dimensional growth in the formation of core-shell structures for the rational design and preparation of nanowires with very complex architectures that cannot be made by any other techniques. Chapter 1 introduces plasmonics, templated electrochemical synthesis, and on-wire lithography concepts and their significances within chemistry and materials science. Chapter 2 details a powerful technique for the deposition of metals and semiconductors with nanometer resolution in segment and gap lengths using on-wire lithography, which serves as a new platform to explore plasmon-exciton interactions in the form of long-range optical nanoscale rulers. Chapter 3 highlights an approach for the electrochemical synthesis of solution dispersible core-shell polymeric and inorganic semiconductor nanowires with metallic leads. A photodetector based on a single core-shell semiconductor nanowire is presented to demonstrate the functionality of the nanowires produced using this approach. Chapter 4 describes a new materials general technique, termed coaxial lithography (COAL), bridging templated electrochemical synthesis and lithography for generating coaxial nanowires in a parallel fashion with sub-10 nanometer resolution in both axial and radial dimensions. Combinations of coaxial nanowires composed of metals, metal oxides, metal chalcogenides, conjugated polymers, and a core/shell semiconductor nanowire with an embedded plasmonic nanoring are presented to

  5. Bridging the gap from mask to physical design for multiple patterning lithography

    NASA Astrophysics Data System (ADS)

    Yu, Bei; Gao, Jhih-Rong; Xu, Xiaoqing; Pan, David Z.

    2014-03-01

    Due to the delay of EUVL, multiple patterning techniques have been used to extend the 193nm lithography to 22nm/14nm nodes, and possibly further. There are many studies on MPL layout decompositions at the mask synthesis stage to resolve the coloring conflicts, minimize the stitches, balance the mask density, or even mitigate the undesirable overlay effects. Meanwhile, there are studies showing that it is very important to consider the multiple patterning implications at earlier physical design stages so that the overall design and manufacturing closure can be reached. In this paper, we will show some recent results and propose a unified physical design methodology for standard cell compliance, pin access, routing, and placement to bridge the gap from mask/layout decomposition to physical design, while accommodating various requirements from double/triple patterning lithography in certain "correct by construction" manner.

  6. Expected innovations of optical lithography in the next 10 years

    NASA Astrophysics Data System (ADS)

    Owa, Soichi; Hirayanagi, Noriyuki

    2016-03-01

    In the past 10 years, immersion lithography has been the most effective high volume manufacturing method for the critical layers of semiconductor devices. Thinking of the next 10 years, we can expect continuous improvement on existing 300 mm wafer scanners with better accuracy and throughput to enhance the total output value per input cost. This value productivity, however, can be upgraded also by larger innovations which might happen in optical lithography. In this paper, we will discuss the possibilities and the impossibilities of potential innovation ideas of optical lithography, which are 450 mm wafer, optical maskless, multicolor lithography, and metamaterial.

  7. Lithography optics: its present and future

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koichi; Mori, Takashi

    1998-09-01

    Firstly, various technical aspects of ArF optics are surveyed. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source for optical lithography. Discussions are ranging over some critical issues of ArF optics. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown. Secondly, estimated are the future trend regarding minimum geometry and the optical parameters, such as numerical aperture and wavelength. For the estimation, simulations based on aerial images are performed, where in the resolution limit is defined as a minimum feature size which retains practical depth of focus. Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser ((λ =248 nm), ArF excimer laser (λ =193 nm) and F2 excimer laser (λ =157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength.

  8. VUV lithography

    DOEpatents

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  9. VUV lithography

    DOEpatents

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  10. Maskless lithography

    DOEpatents

    Sweatt, W.C.; Stulen, R.H.

    1999-02-09

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

  11. Maskless lithography

    DOEpatents

    Sweatt, William C.; Stulen, Richard H.

    1999-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  12. Integration considerations for 130-nm device patterning using ArF lithography

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Levinson, Harry J.; Yang, Chih-Yuh; Pangrle, Suzette K.; Schefske, Jeff A.; Kent, Eric

    2000-07-01

    With the delivery of ful field ArF steppers and scanners to the leading edge IC manufacturers in 1999 for process development work, the industry is poised to implement ArF lithography in volume production in a few years from now. The introduction of ArF lithography in large volume deice manufacturing will be at the 130-nm technology node, with a k1-factor of roughly 0.4. This will represent the first time in the history of the semiconductor industry when the critical feature size of first generation devices for a given technology node is significantly smaller than the lithographic wavelength used in the patterning. Accordingly, there are a number of integration issues that must be resolved to ensure the successful implement of this technology. Such issues include antireflection coatings issues like reflectivity control and thickness, and the tradeoffs between using organic and inorganic ARCs; resist material issues like optical absorption, feature profile, CD uniformity and line edge roughness; and etch issues like resist loss, line edge roughening, endcap pullback, etc. For instance, one of the major problems with most currently available 193-nm resists is their high optical absorption at the exposure wavelength. This necessitates the use of significantly thinner 193-nm resist films than have been the case in earlier lithographic regimes, but etch considerations preclude this option as these materials do not have bey good etch stability. A balance between absorption and etch requirements must therefore be struck to ensure the successful implementation of this lithography. The above outlined integration issues involved in striking this balance are the subject of this paper, and they will be presented from a patterning perspective. Our exposures are made with ASML/900 full field scanner.

  13. Resists for next generation lithography

    SciTech Connect

    Brainard, Robert L.; Barclay, George G.; Anderson, Erik H.; Ocola, Leonidas E.

    2001-10-03

    Four Next Generation Lithographic options (EUV, x-ray, EPL, IPL) are compared against four current optical technologies (i-line, DUV, 193 nm, 157 nm) for resolution capabilities based on wavelength. As the wavelength of the incident radiation decreases, the nature of the interaction with the resist changes. At high energies, optical density is less sensitive to molecular structure then at 157 nm.

  14. Lithography imaging control by enhanced monitoring of light source performance

    NASA Astrophysics Data System (ADS)

    Alagna, Paolo; Zurita, Omar; Lalovic, Ivan; Seong, Nakgeuon; Rechsteiner, Gregory; Thornes, Joshua; D'havé, Koen; Van Look, Lieve; Bekaert, Joost

    2013-04-01

    Reducing lithography pattern variability has become a critical enabler of ArF immersion scaling and is required to ensure consistent lithography process yield for sub-30nm device technologies. As DUV multi-patterning requirements continue to shrink, it is imperative that all sources of lithography variability are controlled throughout the product life-cycle, from technology development to high volume manufacturing. Recent developments of new ArF light-source metrology and monitoring capabilities have been introduced in order to improve lithography patterning control.[1] These technologies enable performance monitoring of new light-source properties, relating to illumination stability, and enable new reporting and analysis of in-line performance.

  15. Immersive video

    NASA Astrophysics Data System (ADS)

    Moezzi, Saied; Katkere, Arun L.; Jain, Ramesh C.

    1996-03-01

    Interactive video and television viewers should have the power to control their viewing position. To make this a reality, we introduce the concept of Immersive Video, which employs computer vision and computer graphics technologies to provide remote users a sense of complete immersion when viewing an event. Immersive Video uses multiple videos of an event, captured from different perspectives, to generate a full 3D digital video of that event. That is accomplished by assimilating important information from each video stream into a comprehensive, dynamic, 3D model of the environment. Using this 3D digital video, interactive viewers can then move around the remote environment and observe the events taking place from any desired perspective. Our Immersive Video System currently provides interactive viewing and `walkthrus' of staged karate demonstrations, basketball games, dance performances, and typical campus scenes. In its full realization, Immersive Video will be a paradigm shift in visual communication which will revolutionize television and video media, and become an integral part of future telepresence and virtual reality systems.

  16. Immersive CAD

    SciTech Connect

    Ames, A.L.

    1999-02-01

    This paper documents development of a capability for performing shape-changing editing operations on solid model representations in an immersive environment. The capability includes part- and assembly-level operations, with part modeling supporting topology-invariant and topology-changing modifications. A discussion of various design considerations in developing an immersive capability is included, along with discussion of a prototype implementation we have developed and explored. The project investigated approaches to providing both topology-invariant and topology-changing editing. A prototype environment was developed to test the approaches and determine the usefulness of immersive editing. The prototype showed exciting potential in redefining the CAD interface. It is fun to use. Editing is much faster and friendlier than traditional feature-based CAD software. The prototype algorithms did not reliably provide a sufficient frame rate for complex geometries, but has provided the necessary roadmap for development of a production capability.

  17. Limitation of blend type of resist platform on EUV lithography

    NASA Astrophysics Data System (ADS)

    Hirayama, Taku; Kim, Su Min; Na, Hai Sub; Koh, Chawon; Kim, Hyun Woo

    2012-03-01

    Chemically amplified resist (CAR) system is being widely used not only for 248 nm and 193 nm lithography but for Extreme Ultra Violet Lithography (EUVL).[1] And CAR system is based on blend resist platform which is formulated with polymer and photo-acid generator (PAG) independently. In EUVL to aim at 22 nm node and beyond, EUV resists are required to achieve much higher acid generation efficiency and overcome RLS (Resolution, Line edge roughness, Sensitivity) trade-off using some ideas such as increase in PAG concentration and film absorption coefficient, suppression of acid diffusion length and so on.[2-6] Increase in PAG loading ratio is a promising strategy to improve EUV resist performance,[7-10] however there must be upper limitation of PAG loading ratio on blend resist platform due to lowering film Tg induced by a plasticization effect of blended PAG. This plasticization effect of blended PAG would have another impact to increase acid diffusion length, resulting in low resolution and significant thickness loss, especially on ultra thin film condition. On the other hand, utilizing the PAG having bulky cation structure was beneficial in order to maintain dark loss (in other word, top loss) of the patterned features, however, this type of cation would show low quantum yield driven by the substituent on a cation structure, so that total performance such as ultimate resolution deteriorated. From these results, the bound resist platform which has PAG unit on polymer backbone as branch would be promising platform because of its potential advantages such as suppression of dark loss, no plasticization effect and control of acid diffusion.

  18. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.

    PubMed

    Ashby, Paul D; Olynick, Deirdre L; Ogletree, D Frank; Naulleau, Patrick P

    2015-10-14

    Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2 nm line-edge roughness, and 20 mJ cm(-2) exposure dose. Here, the current state of the development of EUV resist materials is reviewed. First, pattern formation in resist materials is described and the Hansen solubility sphere (HSS) is used as a framework for understanding the pattern-development process. Then, recent progress in EUVL resist chemistry and characterization is discussed. Incremental advances are obtained by transferring chemically amplified resist materials developed for 193 nm lithography to EUV wavelengths. Significant advances will result from synthesizing high-absorbance resist materials using heavier atoms. In the framework of the HSS model, these materials have significant room for improvement and thus offer great promise as high-performance EUV resists for patterning of sub-10 nm features. PMID:26079187

  19. Advanced Mask Aligner Lithography (AMALITH)

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna

    2015-03-01

    Mask aligner lithography is very attractive for less-critical lithography layers and is widely used for LED, display, CMOS image sensor, micro-fluidics and MEMS manufacturing. Mask aligner lithography is also a preferred choice the semiconductor back-end for 3D-IC, TSV interconnects, advanced packaging (AdP) and wafer-level-packaging (WLP). Mask aligner lithography is a mature technique based on shadow printing and has not much changed since the 1980s. In shadow printing lithography a geometric pattern is transferred by free-space propagation from a photomask to a photosensitive layer on a wafer. The inherent simplicity of the pattern transfer offers ease of operation, low maintenance, moderate capital expenditure, high wafers-per-hour (WPH) throughput, and attractive cost-of-ownership (COO). Advanced mask aligner lithography (AMALITH) comprises different measures to improve shadow printing lithography beyond current limits. The key enabling technology for AMALITH is a novel light integrator systems, referred to as MO Exposure Optics® (MOEO). MOEO allows to fully control and shape the properties of the illumination light in a mask aligner. Full control is the base for accurate simulation and optimization of the shadow printing process (computational lithography). Now photolithography enhancement techniques like customized illumination, optical proximity correction (OPC), phase masks (AAPSM), half-tone lithography and Talbot lithography could be used in mask aligner lithography. We summarize the recent progress in advanced mask aligner lithography (AMALITH) and discuss possible measures to further improve shadow printing lithography.

  20. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  1. Thirty years of lithography simulation

    NASA Astrophysics Data System (ADS)

    Mack, Chris A.

    2005-05-01

    Thirty years ago Rick Dill and his team at IBM published the first account of lithography simulation - the accurate description of semiconductor optical lithography by mathematical equations. Since then, lithography simulation has grown dramatically in importance in four important areas: as a research tool, as a development tool, as a manufacturing tool, and as a learning tool. In this paper, the history of lithography simulations is traced from its roots to today"s indispensable tools for lithographic technology development. Along the way, an attempt will be made to define the true value of lithography simulation to the semiconductor industry.

  2. Beam pen lithography

    NASA Astrophysics Data System (ADS)

    Huo, Fengwei; Zheng, Gengfeng; Liao, Xing; Giam, Louise R.; Chai, Jinan; Chen, Xiaodong; Shim, Wooyoung; Mirkin, Chad A.

    2010-09-01

    Lithography techniques are currently being developed to fabricate nanoscale components for integrated circuits, medical diagnostics and optoelectronics. In conventional far-field optical lithography, lateral feature resolution is diffraction-limited. Approaches that overcome the diffraction limit have been developed, but these are difficult to implement or they preclude arbitrary pattern formation. Techniques based on near-field scanning optical microscopy can overcome the diffraction limit, but they suffer from inherently low throughput and restricted scan areas. Highly parallel two-dimensional, silicon-based, near-field scanning optical microscopy aperture arrays have been fabricated, but aligning a non-deformable aperture array to a large-area substrate with near-field proximity remains challenging. However, recent advances in lithographies based on scanning probe microscopy have made use of transparent two-dimensional arrays of pyramid-shaped elastomeric tips (or `pens') for large-area, high-throughput patterning of ink molecules. Here, we report a massively parallel scanning probe microscopy-based approach that can generate arbitrary patterns by passing 400-nm light through nanoscopic apertures at each tip in the array. The technique, termed beam pen lithography, can toggle between near- and far-field distances, allowing both sub-diffraction limit (100 nm) and larger features to be generated.

  3. Mechanism of single-layer 193-nm dissolution inhibition resist

    NASA Astrophysics Data System (ADS)

    Yan, Zhenglin; Houlihan, Francis M.; Reichmanis, Elsa; Nalamasu, Omkaram; Reiser, Arnost; Dabbagh, Gary; Hutton, Richard S.; Osei, Dan; Sousa, Jose; Bolan, Kevin J.

    2000-06-01

    We have found that the progress of developer base into films of terpolymers of norbornene (NB)-maleic anhydride (MA) and acrylic acid (AA) is a percolation process with a critical site concentration of x(c) equals 0.084 which suggests that every acrylic acid site in the terpolymer of norbornene-maleic anhydride-acrylic acid can make 12 monomer units of the polymer water compatible. In practice these systems are being used with various tert-butyl esters of cholic acid as dissolution inhibitors. The cholates differ very much in their dissolution inhibition factors (lowest t-butyl cholate (1.3) to highest t-butyl lithocholate glutarate dimer (7.4). The change in these factors corrected for molarity follow the hydrophobic character of the dissolution as measured by log(p). A quick screening method has also been established to evaluate dissolution inhibitors based on our observation that the cloud point (the volume % acetone in a water/acetone which gives persistent cloudiness) parallels the dissolution inhibiting power as measured by the dissolution inhibition factor. For dissolution promotion, optimal results are obtained with t-butyl 1,3,5-cyclohexanetricarboxylate (f equals -6.3) and poorest results with t-butyl lithocholate (f equals -2.8); this appears to track with the number of carboxyl groups and the hydrophobicity of the carboxylic acids. The Rmax found for resist formulations tracks well with these findings. Another factor in determining the ultimate achievable contrast is the degree of acidolytic deprotection achieved by the material. It appears that acidolyticaly cleaveable carboxylate esters with a higher concentration of electron withdrawing groups such as t-butyl 1,3,5-cyclohexanetricarboxylate are more effective.

  4. Metal-Mesh Lithography

    PubMed Central

    Tang, Zhao; Wei, Qingshan; Wei, Alexander

    2011-01-01

    Metal-mesh lithography (MML) is a practical hybrid of microcontact printing and capillary force lithography that can be applied over millimeter-sized areas with a high level of uniformity. MML can be achieved by blotting various inks onto substrates through thin copper grids, relying on preferential wetting and capillary interactions between template and substrate for pattern replication. The resulting mesh patterns, which are inverted relative to those produced by stenciling or serigraphy, can be reproduced with low micrometer resolution. MML can be combined with other surface chemistry and lift-off methods to create functional microarrays for diverse applications, such as periodic islands of gold nanorods and patterned corrals for fibroblast cell cultures. PMID:22103322

  5. Metal-mesh lithography.

    PubMed

    Tang, Zhao; Wei, Qingshan; Wei, Alexander

    2011-12-01

    Metal-mesh lithography (MML) is a practical hybrid of microcontact printing and capillary force lithography that can be applied over millimeter-sized areas with a high level of uniformity. MML can be achieved by blotting various inks onto substrates through thin copper grids, relying on preferential wetting and capillary interactions between template and substrate for pattern replication. The resulting mesh patterns, which are inverted relative to those produced by stenciling or serigraphy, can be reproduced with low micrometer resolution. MML can be combined with other surface chemistry and lift-off methods to create functional microarrays for diverse applications, such as periodic islands of gold nanorods and patterned corrals for fibroblast cell cultures.

  6. Distortion free projection lithography

    SciTech Connect

    Hawryluk, A.M.; Ceglio, N.M.; Phillion, D.W.; Gaines, D.P.

    1991-07-09

    Soft x-ray projection lithography (SXPL) may be used to fabricate high resolution structures for future devices, but will require an all-reflecting optical system with {approximately} 100 nm resolution and < 10 nm image distortion over large fields-of-view. In present designs, the lithographic tool for SXPL is envisioned as a ring-field'' scanning system with multiple (3--5), possibly aspheric, imaging optics fabricated to {approximately} < 1 nm figure precision. In its present form, several technologies must be developed before this tool can become practical. A simple, non-scanning optical system with less expensive optics, reduced mirror reflection losses and lower source power requirements would be very attractive. We have developed a technique, called Encoded Mask Lithography (EML), which allows for distortion free, high resolution reticle replication over a large field-of-view while using an imaging system with substantial inherent distortion. When applied to SXPL, EML allows us to use a simple, two spherical mirror imaging system. The simplified optical system used in EML eases optic fabrication requirements, obviates the need for mask-to-wafer scanning, and decreases multilayer mirror reflection losses and source power requirements. Although developed for SXPL, this concept is applicable to all forms of projection lithography where distortion over large fields may be a problem. 10 refs., 4 figs.

  7. Native Language Immersion.

    ERIC Educational Resources Information Center

    Reyhner, Jon

    This paper describes the benefits of indigenous mother tongue immersion programs, examining the Total Physical Response approach to immersion for beginning learners and focusing on the development of Maori and Hawaiian mother tongue language immersion programs. The paper discusses the importance of immersing students in a language-risk…

  8. Extreme ultraviolet Talbot interference lithography.

    PubMed

    Li, Wei; Marconi, Mario C

    2015-10-01

    Periodic nanopatterns can be generated using lithography based on the Talbot effect or optical interference. However, these techniques have restrictions that limit their performance. High resolution Talbot lithography is limited by the very small depth of focus and the demanding requirements in the fabrication of the master mask. Interference lithography, with large DOF and high resolution, is limited to simple periodic patterns. This paper describes a hybrid extreme ultraviolet lithography approach that combines Talbot lithography and interference lithography to render an interference pattern with a lattice determined by a Talbot image. As a result, the method enables filling the arbitrary shaped cells produced by the Talbot image with interference patterns. Detailed modeling, system design and experimental results using a tabletop EUV laser are presented. PMID:26480070

  9. Vapor deposited release layers for nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Tong; Kobrin, Boris; Wanebo, Mike; Nowak, Romek; Yi, Richard; Chinn, Jeff; Bender, Markus; Fuchs, Andreas; Otto, Martin

    2006-03-01

    This paper presents the advantages of using a vapor deposited self-assembled monolayer (SAM) as a mold release layer for nano-imprint lithography. The release SAM was formed from a perfluorinated organo-silane precursor at room temperature in the gaseous state by a technique called Molecular Vapor Deposition (MVD TM). In contrast to a conventional coating from a liquid immersion sequence, the vapor deposition process forms a particulate free film resulting in a substantial reduction of surface defects. Another advantage of the vapor process is its excellent conformity onto the nanoscale topography of the mold. The self-assembling and self-limiting characteristics of the MVD process enables excellent CD control of the mold pattern. Pattern replication as small as 38nm features was achieved. Various other quantitative metrics of the MVD release layer are presented in this paper.

  10. Microfluidic Applications of Soft Lithography

    SciTech Connect

    Rose, K A; Krulevitch, P; Hamilton, J

    2001-04-10

    The soft lithography fabrication technique was applied to three microfluidic devices. The method was used to create an original micropump design and retrofit to existing designs for a DNA manipulation device and a counter biological warfare sample preparation device. Each device presented unique and original challenges to the soft lithography application. AI1 design constraints of the retrofit devices were satisfied using PDMS devices created through variation of soft lithography methods. The micropump utilized the versatility of PDMS, creating design options not available with other materials. In all cases, the rapid processing of soft lithography reduced the fabrication time, creating faster turnaround for design modifications.

  11. Optimal design of wide-view-angle waveplate used for polarimetric diagnosis of lithography system

    NASA Astrophysics Data System (ADS)

    Gu, Honggang; Jiang, Hao; Zhang, Chuanwei; Chen, Xiuguo; Liu, Shiyuan

    2016-03-01

    The diagnosis and control of the polarization aberrations is one of the main concerns in a hyper numerical aperture (NA) lithography system. Waveplates are basic and indispensable optical components in the polarimetric diagnosis tools for the immersion lithography system. The retardance of a birefringent waveplate is highly sensitive to the incident angle of the light, which makes the conventional waveplate not suitable to be applied in the polarimetric diagnosis for the immersion lithography system with a hyper NA. In this paper, we propose a method for the optimal design of a wideview- angle waveplate by combining two positive waveplates made from magnesium fluoride (MgF2) and two negative waveplates made from sapphire using the simulated annealing algorithm. Theoretical derivations and numerical simulations are performed and the results demonstrate that the maximum variation in the retardance of the optimally designed wide-view-angle waveplate is less than +/- 0.35° for a wide-view-angle range of +/- 20°.

  12. Arrays of metallic micro-/nano-structures by means of colloidal lithography and laser dewetting

    NASA Astrophysics Data System (ADS)

    Constantinescu, C.; Deepak, K. L. N.; Delaporte, P.; Utéza, O.; Grojo, D.

    2016-06-01

    Long-range arrays of prismatoid metal nanostructures are fabricated by a hybrid methodology, i.e. using Langmuir microsphere films and laser-assisted dewetting. As the initial step, we use colloidal lithography. Monolayers of 1-5 μm polystyrene microspheres covered with a thermally evaporated Ag or Au thin film of controlled thickness (5-50 nm) are then used as masks to pattern the surface of quartz, BK7 glass or silicon substrates, typically in the order of cm2. When removing the spheres by physico-chemical means (ultrasound bath and solvent wash), the resulting surface shows an array of nm-size prismatoid structures (Fischer patterns), that can be further processed by laser. Thus, by using two different lasers (355-nm wavelength, 50-ps duration and 193-nm wavelength, 15-ns duration) for the metal dewetting, we control the shape of the deposited nanostructures. A detailed study is presented here on the reshaping of such metal structures through laser annealing. This new hybrid methodology expands the panel of microsphere-assisted technologies employed in preparing surface nanomaterials.

  13. Optical simulations for fractional fluorine terminated coatings on nanoimprint lithography masks

    NASA Astrophysics Data System (ADS)

    Seidel, Thomas E.; Goldberg, Alexander; Halls, Mathew D.

    2015-10-01

    Simulations of the optical intensity within Nano Imprint Lithography (NIL) mask features have been made for patterned quartz masks having ultrathin film coatings with different indices of refraction. Fractionally fluorine terminated surfaces, previously proposed for improving the yield of NIL processes, are briefly reviewed. Optical intensity solutions within the feature were obtained using Panoramictech Maxwell solver software for variances in the optical constants of the coating films, aspect ratio, feature size, and wavelength.. The coated masks have conformal surface, higher index of refraction under-layer coating and a fractional terminated fluorine hydrocarbon (FHC) monomolecular layer. The values of optical constants for the FHC layers are unknown, so a range of ad-hoc values were simulated. Optical constants for quartz mask and Al2O3, TiO2 and Si under-layer films are taken from the literature. Wavelengths were varied from 193nm to 365nm. The question of photo-dissociation of the FHC layer for higher energy photons is addressed from first principles, with the result that the F-terminated layers are stable at higher wavelengths. Preliminary simulations for features filled with resist over various substrates are dependent on the antireflection character of the underlying film system. The optical intensity is generally increased within the simulated mask feature when coated with a higher index/FHC films relative to the uncoated reference quartz mask for ~5nm physical feature sizes.

  14. Fundamental study of optical threshold layer approach towards double exposure lithography

    NASA Astrophysics Data System (ADS)

    Gu, Xinyu; Berro, Adam J.; Cho, Younjin; Jen, Kane; Lee, Saul; Ngai, Tomoki; Ogata, Toshiyuki; Durand, William J.; Sundaresan, Arunkumar; Lancaster, Jeffrey R.; Jockusch, Steffen; Zimmerman, Paul; Turro, Nicholas J.; Willson, C. G.

    2009-03-01

    193 immersion lithography has reached its maximal achievable resolution. There are mainly two lithographic strategies that will enable continued increase in resolution. Those are being pursued in parallel. The first is extreme ultraviolet (EUV) lithography and the second is double patterning (exposure) lithography. EUV lithography is counted on to be available in 2013 time frame for 22 nm node. Unfortunately, this technology has suffered several delays due to fundamental problems with source power, mask infrastructure, metrology and overall reliability. The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node. This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography. Compared to DPL, DEL offers advantages in overlay and process time, thus reducing the cost-of-ownership (CoO). However, DEL requires new materials that have a non-linear photoresponse. So far, several approaches were proposed for double exposure lithography, from which Optical Threshold Layer (OTL) was found to give the best lithography performance according to the results of the simulation. This paper details the principle of the OTL approach. A photochromic polymer was designed and synthesized. The feasibility of the material for application of DEL was explored by a series of evaluations.

  15. Bubble-Pen Lithography.

    PubMed

    Lin, Linhan; Peng, Xiaolei; Mao, Zhangming; Li, Wei; Yogeesh, Maruthi N; Rajeeva, Bharath Bangalore; Perillo, Evan P; Dunn, Andrew K; Akinwande, Deji; Zheng, Yuebing

    2016-01-13

    Current lithography techniques, which employ photon, electron, or ion beams to induce chemical or physical reactions for micro/nano-fabrication, have remained challenging in patterning chemically synthesized colloidal particles, which are emerging as building blocks for functional devices. Herein, we develop a new technique - bubble-pen lithography (BPL) - to pattern colloidal particles on substrates using optically controlled microbubbles. Briefly, a single laser beam generates a microbubble at the interface of colloidal suspension and a plasmonic substrate via plasmon-enhanced photothermal effects. The microbubble captures and immobilizes the colloidal particles on the substrate through coordinated actions of Marangoni convection, surface tension, gas pressure, and substrate adhesion. Through directing the laser beam to move the microbubble, we create arbitrary single-particle patterns and particle assemblies with different resolutions and architectures. Furthermore, we have applied BPL to pattern CdSe/ZnS quantum dots on plasmonic substrates and polystyrene (PS) microparticles on two-dimensional (2D) atomic-layer materials. With the low-power operation, arbitrary patterning and applicability to general colloidal particles, BPL will find a wide range of applications in microelectronics, nanophotonics, and nanomedicine.

  16. Programmable imprint lithography template

    DOEpatents

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  17. Method for maskless lithography

    DOEpatents

    Sweatt, William C.; Stulen, Richard H.

    2000-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  18. Vous avez dit "immersion?" (You Said "Immersion?").

    ERIC Educational Resources Information Center

    Gajo, Laurent, Ed.

    1998-01-01

    Articles on immersion and bilingual education include these: "Terminological Considerations Regarding Content and Language Integrated Learning" (Tarja Nikula, David Marsh); "Educazione bilingue e multiculturale, istruzione bilingue, immersione totale: quattro nozioni da definire" ("Bilingual and Multicultural Education, Bilingual Instruction,…

  19. Nanoimprint lithography for nanodevice fabrication

    NASA Astrophysics Data System (ADS)

    Barcelo, Steven; Li, Zhiyong

    2016-09-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  20. Cryogenic immersion microscope

    DOEpatents

    Le Gros, Mark; Larabell, Carolyn A.

    2010-12-14

    A cryogenic immersion microscope whose objective lens is at least partially in contact with a liquid reservoir of a cryogenic liquid, in which reservoir a sample of interest is immersed is disclosed. When the cryogenic liquid has an index of refraction that reduces refraction at interfaces between the lens and the sample, overall resolution and image quality are improved. A combination of an immersion microscope and x-ray microscope, suitable for imaging at cryogenic temperatures is also disclosed.

  1. Extreme ultraviolet lithography machine

    SciTech Connect

    Tichenor, D.A.; Kubiak, G.D.; Haney, S.J.; Sweeney, D.W.

    2000-02-29

    An extreme ultraviolet lithography (EUVL) machine or system is disclosed for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10--14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  2. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  3. LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

    NASA Astrophysics Data System (ADS)

    Cantu, Pietro; Baldi, Livio; Piacentini, Paolo; Sytsma, Joost; Le Gratiet, Bertrand; Gaugiran, Stéphanie; Wong, Patrick; Miyashita, Hiroyuki; Atzei, Luisa R.; Buch, Xavier; Verkleij, Dick; Toublan, Olivier; Perez-Murano, Francesco; Mecerreyes, David

    2010-04-01

    In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain; includes: IC makers (Numonyx and STMicroelectronics), a group of equipment and materials companies (ASML, Lam Research srl, JSR, FEI), a mask maker (Dai Nippon Photomask Europe), an EDA company (Mentor Graphics) and four research and development institutes (CEA-Leti, IMEC, Centro Nacional de Microelectrónica, CIDETEC). The LENS project aims to develop and integrate the overall infrastructure required to reach patterning resolutions required by 32nm and 22nm technology nodes through the double patterning and pitch doubling technologies on existing conventional immersion exposure tools, with the purpose to allow the timely development of 32nm and 22nm technology nodes for memories and logic devices, providing a safe alternative to EUV, Higher Refraction Index Fluids Immersion Lithography and maskless lithography, which appear to be still far from maturity. The project will cover the whole lithography supply chain including design, masks, materials, exposure tools, process integration, metrology and its final objective is the demonstration of 22nm node patterning on available 1.35 NA immersion tools on high complexity mask set.

  4. Photoinhibition superresolution lithography

    NASA Astrophysics Data System (ADS)

    Forman, Darren Lawrence

    While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

  5. What Works in Immersion?

    ERIC Educational Resources Information Center

    Trimino, Andy; Ferguson, Nancy

    Materials used in conducting a conference workshop on language immersion are presented, including an introductory overview, a guide for observing and analyzing immersion instruction, findings resulting from analysis of the program in question, and the text of a related presentation made at the same conference. The introductory section describes…

  6. Physical Limitations in Lithography for Microelectronics.

    ERIC Educational Resources Information Center

    Flavin, P. G.

    1981-01-01

    Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

  7. Immersion grating mount design for IGRINS and GMTNIRS

    NASA Astrophysics Data System (ADS)

    Moon, Bongkon; Wang, Weisong; Park, Chan; Yuk, In-soo; Chun, Moo-Young; Jaffe, Daniel T.

    2012-09-01

    The IGRINS (Immersion GRating INfrared Spectrometer) is a high resolution wide-band infrared spectrograph developed by the Korea Astronomy and Space Science Institute (KASI) and the University of Texas at Austin (UT). Immersion grating is a key component of IGRINS, which disperses the input ray by using a silicon material with a lithography technology. Optomechanical mount for the immersion grating is important to keep the high spectral resolution and the optical alignment in a cold temperature of 130+/-0.06K. The optical performance of immersion grating can maintain within the de-center tolerance of +/-0.05mm and the tip-tilt tolerance of +/-1.5arcmin. The mount mechanism utilizes the flexure and the semikinematic support design to satisfy the requirement and the operation condition. When the IGRINS system is cooled down to a cold temperature, three flexures compensate for the thermal contraction stress due to the different material between the immersion grating and the mounting part (aluminum 6061). They also support the immersion grating by an appropriate preload. Thermal stability is controlled by a copper strap with proper dimensions and a heater. Typically, structural and thermal analysis was performed to confirm the mount mechanism. This mechanism will be also applied to the GMTNIRS (Giant Magellan Telescope Near InfraRed Spectrograph) instrument, which is a first-generation candidate of the GMT telescope.

  8. Polymer nanofibers by soft lithography

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Maruccio, Giuseppe; Mele, Elisa; Persano, Luana; Di Benedetto, Francesca; Cingolani, Roberto

    2005-09-01

    The fabrication of polymeric fibers by soft lithography is demonstrated. Polyurethane, patterned by capillarity-induced molding with high-resolution elastomeric templates, forms mm-long fibers with a diameter below 0.3μm. The Young's modulus of the fabricated structures, evaluated by force-distance scanning probe spectroscopy, has a value of 0.8MPa. This is an excellent example of nanostructures feasible by the combination of soft nanopatterning and high-resolution fabrication approaches for master templates, and particularly electron-beam lithography.

  9. Porphyrin-Based Photocatalytic Lithography

    SciTech Connect

    Bearinger, J; Stone, G; Christian, A; Dugan, L; Hiddessen, A; Wu, K J; Wu, L; Hamilton, J; Stockton, C; Hubbell, J

    2007-10-15

    Photocatalytic lithography is an emerging technique that couples light with coated mask materials in order to pattern surface chemistry. We excite porphyrins to create radical species that photocatalytically oxidize, and thereby pattern, chemistries in the local vicinity. The technique advantageously does not necessitate mass transport or specified substrates, it is fast and robust and the wavelength of light does not limit the resolution of patterned features. We have patterned proteins and cells in order to demonstrate the utility of photocatalytic lithography in life science applications.

  10. Impact of reticle absorber on the imaging properties in ArFi lithography

    NASA Astrophysics Data System (ADS)

    Finders, Jo; Mouraille, O.; Bouma, A.; Ngai, A.; Grim, K.; van Praagh, J.; Toma, C.; Miyazaki, J.; Higuchi, M.; Kojima, Y.; Connolly, B.; Englard, I.; Cohen, Y.; Mangan, S.; Ben Yishai, Michael; Jullian, Karine

    2012-02-01

    In this paper we compare the imaging properties of lithographic test structures formed on test masks with different reticle absorbers for use in1.35 NA immersion lithography. We will look into different aspects like process windows and CD fingerprints. Beyond that we look into the topographic effects caused by the different absorbers, the mask 3D effects. We will study the interaction between the different masks and immersion scanner. Special attention is given towards the correctability of the intrafield CD fingerprint by mask and scanner applying dose corrections.

  11. Microfabrication using soft lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Xiao-Mei

    Soft Lithography is a group of non-photolithographic techniques currently being explored in our group. Four such techniques-microcontact printing (μCP), replica molding (REM), micromolding in capillaries (MIMIC), and microtransfer molding (μTM)-have been demonstrated for fabricating micro- and nanostructures of a variety of materials with dimension >=30 nm. Part I (Chapters 1-5) reviews several aspects of the three molding techniques REM, MIMIC, and μTM. Chapters 1-3 describe μTM and MIMIC, and the use of these techniques in the fabrication of functional devices. μTM is capable of generating μm-scale structures over large areas, on both planar and contoured surfaces, and is able to make 3-dimensional structures layer by layer. The capability of μTM and MIMIC has been demonstrated in the fabrication of single-mode waveguides, waveguide couplers and interferometers. The coupling between waveguides can be tailored by waveguide spacing or the differential in curing time between the waveguides and the cladding. Chapters 4-5 demonstrate the combination of REM and shrinkable polystyrene (PS) films to reduce the feature size of microstructures and to generate microstructures with high aspect ratios on both planar and curved surfaces. A shrinkable PS film is patterned with relief structures, and then heated and shrinks. Thermal shrinkage results in a 100-fold increase in the aspect ratio of the patterned microstructures in the PS film. The microstructures in the shrunken PS films can be transferred to many other materials by REM. Part II (Chapters 6-7) focuses on two issues in the microfabrication using self-assembled monolayers (SAMs) as ultrathin resists. Chapter 6 describes a selective etching solution for transferring patterns of SAMs of alkanethiolates into the underlying layers (e.g., gold, silver, and copper). This etching solution uses thiosulfate as the ligand that coordinates to the metal ions, and ferricyanide as the oxidant. It has been demonstrated to be

  12. Graphic Arts/Offset Lithography.

    ERIC Educational Resources Information Center

    Hoisington, James; Metcalf, Joseph

    This revised curriculum for graphic arts is designed to provide secondary and postsecondary students with entry-level skills and an understanding of current printing technology. It contains lesson plans based on entry-level competencies for offset lithography as identified by educators and industry representatives. The guide is divided into 15…

  13. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, Natale M.; Markle, David A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  14. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  15. Biomolecular Patterning via Photocatalytic Lithography

    SciTech Connect

    Bearinger, J P; Hiddessen, A L; Wu, K J; Christian, A T; Dugan, L C; Stone, G; Camarero, J; Hinz, A K; Hubbell, J A

    2005-02-18

    We have developed a novel method for patterning surface chemistry: Photocatalytic Lithography. This technique relies on inexpensive stamp materials and light; it does not necessitate mass transport or specified substrates, and the wavelength of light should not limit feature resolution. We have demonstrated the utility of this technique through the patterning of proteins, single cells and bacteria.

  16. French Immersion Weekends.

    ERIC Educational Resources Information Center

    Mydlarski, Donna; Klinck, Pat

    1983-01-01

    Describes immersion weekends sponsored by the University of Calgary. The discussion includes examples from actual weekends to describe the planning and implementation. A qualitative evaluation is also discussed. (Author/AMH)

  17. CD and defect improvement challenges for immersion processes

    NASA Astrophysics Data System (ADS)

    Ehara, Keisuke; Ema, Tatsuhiko; Yamasaki, Toshinari; Nakagawa, Seiji; Ishitani, Seiji; Morita, Akihiko; Kim, Jeonghun; Kanaoka, Masashi; Yasuda, Shuichi; Asai, Masaya

    2009-03-01

    The intention of this study is to develop an immersion lithography process using advanced track solutions to achieve world class critical dimension (CD) and defectivity performance in a state of the art manufacturing facility. This study looks at three important topics for immersion lithography: defectivity, CD control, and wafer backside contamination. The topic of defectivity is addressed through optimization of coat, develop, and rinse processes as well as implementation of soak steps and bevel cleaning as part of a comprehensive defect solution. Develop and rinse processing techniques are especially important in the effort to achieve a zero defect solution. Improved CD control is achieved using a biased hot plate (BHP) equipped with an electrostatic chuck. This electrostatic chuck BHP (eBHP) is not only able to operate at a very uniform temperature, but it also allows the user to bias the post exposure bake (PEB) temperature profile to compensate for systematic within-wafer (WiW) CD non-uniformities. Optimized CD results, pre and post etch, are presented for production wafers. Wafer backside particles can cause focus spots on an individual wafer or migrate to the exposure tool's wafer stage and cause problems for a multitude of wafers. A basic evaluation of the cleaning efficiency of a backside scrubber unit located on the track was performed as a precursor to a future study examining the impact of wafer backside condition on scanner focus errors as well as defectivity in an immersion scanner.

  18. Optical characterization of subwavelength-scale solid immersion lenses

    NASA Astrophysics Data System (ADS)

    Kim, Myun-Sik; Scharf, Toralf; Haq, Mohammad Tahdiul; Nakagawa, Wataru; Herzig, Hans Peter

    2012-03-01

    We present the fabrication and optical characterization of nano-scale solid immersion lenses (nano-SILs) with sizes down to a subwavelength range. Submicron-scale cylinders fabricated by electron-beam lithography (EBL) are thermally reflowed to form a spherical shape. Subsequent soft lithography leads to nano-SILs on transparent substrates, i.e. glass, for optical characterization with visible light. The optical characterization is performed using a high-resolution interference microscope (HRIM) with illumination at 642 nm wavelength. The measurements of the 3D amplitude and phase fields provide information on the spot size and the peak intensity. In particular, the phase measurement is a more convincing proof of the Airy disc size reduction rather than the full-width at half maximum (FWHM) spot size. The focal spots produced by the nano-SILs show both spot-size reduction and enhanced optical intensity, which are consistent with the immersion effect. In this way, we experimentally confirm the immersion effect of a subwavelength-size SIL (d = 530 nm and h = 45 nm) with a spot reduction ratio of 1.35, which is less than the expected value of 1.5, most likely due to the slightly non-ideal shape of the nano-SIL.

  19. Direct write electron beam lithography: a historical overview

    NASA Astrophysics Data System (ADS)

    Pfeiffer, Hans C.

    2010-09-01

    of opportunity for EPL had closed with the quick implementation of immersion lithography and the interest of the industry has since shifted back to maskless lithography (ML2). This historical overview of EBDW will highlight opportunities and limitation of the technology with particular focus on technical challenges facing the current ML2 development efforts in Europe and the US. A brief status report and risk assessment of the ML2 approaches will be provided.

  20. Immersive cyberspace system

    NASA Technical Reports Server (NTRS)

    Park, Brian V. (Inventor)

    1997-01-01

    An immersive cyberspace system is presented which provides visual, audible, and vibrational inputs to a subject remaining in neutral immersion, and also provides for subject control input. The immersive cyberspace system includes a relaxation chair and a neutral immersion display hood. The relaxation chair supports a subject positioned thereupon, and places the subject in position which merges a neutral body position, the position a body naturally assumes in zero gravity, with a savasana yoga position. The display hood, which covers the subject's head, is configured to produce light images and sounds. An image projection subsystem provides either external or internal image projection. The display hood includes a projection screen moveably attached to an opaque shroud. A motion base supports the relaxation chair and produces vibrational inputs over a range of about 0-30 Hz. The motion base also produces limited translation and rotational movements of the relaxation chair. These limited translational and rotational movements, when properly coordinated with visual stimuli, constitute motion cues which create sensations of pitch, yaw, and roll movements. Vibration transducers produce vibrational inputs from about 20 Hz to about 150 Hz. An external computer, coupled to various components of the immersive cyberspace system, executes a software program and creates the cyberspace environment. One or more neutral hand posture controllers may be coupled to the external computer system and used to control various aspects of the cyberspace environment, or to enter data during the cyberspace experience.

  1. X-ray lithography source

    DOEpatents

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  2. X-ray lithography source

    DOEpatents

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  3. EUV Lithography: New Metrology Challenges

    SciTech Connect

    Wood, Obert

    2007-09-26

    Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 22 nm half-pitch device node and beyond. Because its imaging wavelength is approximately twenty times shorter than those currently in use (13.5 nm versus 193-248 nm) and because EUV optics and masks must be provided with highly-precise reflective multilayer coatings, EUV lithography presents a number of new and difficult metrology challenges. In this paper, the current status of the metrology tools being used to characterize the figure and finish of EUV mirror surfaces, the defectivity and flatness of EUV mask blanks and the outgassing rates of EUV resist materials are discussed.

  4. Extending standard mask lithography exposure technique to spherical surfaces

    NASA Astrophysics Data System (ADS)

    Stumpf, Daniela; Zeitner, Uwe D.

    2014-06-01

    Similar to planar lithography, the use of a mask to produce multiple copies of a binary master sample is also possible in the case of spherical surfaces. Evidently, the spherical mask needs to have the opposite radius of curvature of the desired substrate, and additional problems arising from the curved geometry have to be taken into consideration. Inhomogeneities of the illumination impinging on the resist-coated surface negatively influence the exposure result. Ways of overcoming these difficulties to obtain satisfactory results for the implementation of the exposure in a conventional mask aligner are shown. Despite a lowered contrast due to back reflections and a varying distance between mask and substrate, exposure results of sufficient quality are achieved with the help of an adapted aperture and the use of water as an immersion fluid.

  5. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-03-10

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features

  6. Block-based mask optimization for optical lithography.

    PubMed

    Ma, Xu; Song, Zhiyang; Li, Yanqiu; Arce, Gonzalo R

    2013-05-10

    Pixel-based optical proximity correction (PBOPC) methods have been developed as a leading-edge resolution enhancement technique (RET) for integrated circuit fabrication. PBOPC independently modulates each pixel on the reticle, which tremendously increases the mask's complexity and, at the same time, deteriorates its manufacturability. Most current PBOPC algorithms recur to regularization methods or a mask manufacturing rule check (MRC) to improve the mask manufacturability. Typically, these approaches either fail to satisfy manufacturing constraints on the practical product line, or lead to suboptimal mask patterns that may degrade the lithographic performance. This paper develops a block-based optical proximity correction (BBOPC) algorithm to pursue the optimal masks with manufacturability compliance, where the mask is shaped by a set of overlapped basis blocks rather than pixels. BBOPC optimization is formulated based on a vector imaging model, which is adequate for both dry lithography with lower numerical aperture (NA), and immersion lithography with hyper-NA. The BBOPC algorithm successively optimizes the main features (MF) and subresolution assist features (SRAF) based on a modified conjugate gradient method. It is effective at smoothing any unmanufacturable jogs along edges. A weight matrix is introduced in the cost function to preserve the edge fidelity of the printed images. Simulations show that the BBOPC algorithm can improve lithographic imaging performance while maintaining mask manufacturing constraints. PMID:23669851

  7. Total Technology Immersion

    ERIC Educational Resources Information Center

    Vaughn, Sandy

    2010-01-01

    Total technology immersion doesn't happen overnight, but with vision and determination, transformation can take hold and start to grow. Floydada Independent School District (FISD), winner of the 2010 Sylvia Charp Award for District Innovation in Technology, is a great example of what a district can achieve when starting with a modest tech…

  8. The Perception of Immersion

    NASA Technical Reports Server (NTRS)

    Begault, Durand Rene'; Wenzel, Elizabeth M.

    2016-01-01

    Immersion refers acoustically to sounds as coming from all directions about a listener, which normally is an inevitable consequence of human listening in an air medium. Audible sound sources are everywhere in everyday environments where sound waves propagate and reflect from surfaces around a listener. Even in environments where sounds are minimized to the greatest degree possible, such as an anechoic chamber, self-generated sound will be audible. However, the common meaning of immersion in audio and acoustics refers to the psychological sensation of being surrounded by specific sound sources. Although acoustically a sound can reach a listener from multiple surrounding directions, its spatial characteristics may be judged as unrealistic, static or constrained. For example, good quality concert hall acoustics has traditionally been correlated with a listeners sensation of being immersed by the sound of the orchestra, as opposed to the sound seeming distant and removed. Spatial audio techniques, particularly 3D audio, can provide an immersive experience because virtual sound sources and sounds reflections can be made to appear from anywhere in space about a listener. This chapter introduces a listener to the physiological, psychoacoustic and acoustic bases of these sensations.

  9. Extending single-exposure patterning towards 38-nm half-pitch using 1.35 NA immersion

    NASA Astrophysics Data System (ADS)

    Bouchoms, Igor; Engelen, Andre; Mulkens, Jan; Boom, Herman; Moerman, Richard; Liebregts, Paul; de Graaf, Roelof; van Veen, Marieke; Thomassen, Patrick; Emer, Wolfgang; Sperling, Frank

    2009-03-01

    Immersion lithography started to become the main workhorse for volume production of 45-nm devices, and while waiting for EUV lithography, immersion will continue to be the main technology for further shrinks. In a first step single exposure can be stretched towards the 0.25 k1 limit, after which various double patterning methods are lining up to print 32-nm and even 22-nm devices. The immersion exposure system plays a key role here, and continuous improvement steps are required to support tighter CD and overlay budgets. Additionally cost of ownership (COO) needs to be reduced and one important way to achieve this is to increase the wafer productivity. In this paper we discuss the design and performance of a new improved immersion exposure system XT:1950i. This system will extend immersion towards 38-nm half pitch resolution using a 1.35 NA lens and extreme off axis illumination (e.g. dipole). The system improvements result in better CDU, more accurate overlay towards 4-nm and higher wafer productivity towards 148- wph. Last but not least a next step in immersion technology is implemented. A novel immersion hood is introduced giving more robust low and stable defects performance.

  10. Why bother with x-ray lithography?

    NASA Astrophysics Data System (ADS)

    Smith, Henry I.; Schattenburg, Mark L.

    1992-07-01

    The manufacture of state-of-the-art integrated circuits uses UV optical projection lithography. Conventional wisdom (i.e., the trade journals) holds that this technology will take the industry to quarter-micrometer minimum features sizes and below. So, why bother with X-ray lithography? The reason is that lithography is a 'system problem', and proximity X-ray lithography is better matched to that system problem than any other technology, once the initial investment is surmounted. X-ray lithography offers the most cost-effective path to the future of ultra-large-scale integrated circuits with feature sizes of tenth micrometer and below (i.e., gigascale electronics and quantum-effect electronics).

  11. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  12. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  13. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  14. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  15. Stage Cylindrical Immersive Display

    NASA Technical Reports Server (NTRS)

    Abramyan, Lucy; Norris, Jeffrey S.; Powell, Mark W.; Mittman, David S.; Shams, Khawaja S.

    2011-01-01

    Panoramic images with a wide field of view intend to provide a better understanding of an environment by placing objects of the environment on one seamless image. However, understanding the sizes and relative positions of the objects in a panorama is not intuitive and prone to errors because the field of view is unnatural to human perception. Scientists are often faced with the difficult task of interpreting the sizes and relative positions of objects in an environment when viewing an image of the environment on computer monitors or prints. A panorama can display an object that appears to be to the right of the viewer when it is, in fact, behind the viewer. This misinterpretation can be very costly, especially when the environment is remote and/or only accessible by unmanned vehicles. A 270 cylindrical display has been developed that surrounds the viewer with carefully calibrated panoramic imagery that correctly engages their natural kinesthetic senses and provides a more accurate awareness of the environment. The cylindrical immersive display offers a more natural window to the environment than a standard cubic CAVE (Cave Automatic Virtual Environment), and the geometry allows multiple collocated users to simultaneously view data and share important decision-making tasks. A CAVE is an immersive virtual reality environment that allows one or more users to absorb themselves in a virtual environment. A common CAVE setup is a room-sized cube where the cube sides act as projection planes. By nature, all cubic CAVEs face a problem with edge matching at edges and corners of the display. Modern immersive displays have found ways to minimize seams by creating very tight edges, and rely on the user to ignore the seam. One significant deficiency of flat-walled CAVEs is that the sense of orientation and perspective within the scene is broken across adjacent walls. On any single wall, parallel lines properly converge at their vanishing point as they should, and the sense of

  16. Enabling immersive simulation.

    SciTech Connect

    McCoy, Josh; Mateas, Michael; Hart, Derek H.; Whetzel, Jonathan; Basilico, Justin Derrick; Glickman, Matthew R.; Abbott, Robert G.

    2009-02-01

    The object of the 'Enabling Immersive Simulation for Complex Systems Analysis and Training' LDRD has been to research, design, and engineer a capability to develop simulations which (1) provide a rich, immersive interface for participation by real humans (exploiting existing high-performance game-engine technology wherever possible), and (2) can leverage Sandia's substantial investment in high-fidelity physical and cognitive models implemented in the Umbra simulation framework. We report here on these efforts. First, we describe the integration of Sandia's Umbra modular simulation framework with the open-source Delta3D game engine. Next, we report on Umbra's integration with Sandia's Cognitive Foundry, specifically to provide for learning behaviors for 'virtual teammates' directly from observed human behavior. Finally, we describe the integration of Delta3D with the ABL behavior engine, and report on research into establishing the theoretical framework that will be required to make use of tools like ABL to scale up to increasingly rich and realistic virtual characters.

  17. Gradient-based inverse extreme ultraviolet lithography.

    PubMed

    Ma, Xu; Wang, Jie; Chen, Xuanbo; Li, Yanqiu; Arce, Gonzalo R

    2015-08-20

    Extreme ultraviolet (EUV) lithography is the most promising successor of current deep ultraviolet (DUV) lithography. The very short wavelength, reflective optics, and nontelecentric structure of EUV lithography systems bring in different imaging phenomena into the lithographic image synthesis problem. This paper develops a gradient-based inverse algorithm for EUV lithography systems to effectively improve the image fidelity by comprehensively compensating the optical proximity effect, flare, photoresist, and mask shadowing effects. A block-based method is applied to iteratively optimize the main features and subresolution assist features (SRAFs) of mask patterns, while simultaneously preserving the mask manufacturability. The mask shadowing effect may be compensated by a retargeting method based on a calibrated shadowing model. Illustrative simulations at 22 and 16 nm technology nodes are presented to validate the effectiveness of the proposed methods. PMID:26368764

  18. New spin-on metal hardmask materials for lithography processes

    NASA Astrophysics Data System (ADS)

    Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; Rahman, Dalil; Anyadiegwu, Clement; Mckenzie, Douglas; Dioses, Alberto; Cho, Joonyeon; Padmanaban, Munirathna

    2013-03-01

    Since the critical dimensions in integrated circuit (IC) device fabrication continue to shrink below 32 nm, multilayer stacks with alternating etch selectivities are required for successful pattern transfer from the exposed photoresist to the substrate. Inorganic resist underlayer materials are used as hard masks in reactive ion etching (RIE) with oxidative gases. The conventional silicon hardmask has demonstrated good reflectivity control and reasonable etch selectivity. However, some issues such as the rework of trilayer stacks and cleaning of oxide residue by wet chemistry are challenging problems for manufacturability. The present work reveals novel spin-on underlayer materials containing significant amounts of metal oxides in the film after baking at normal processing conditions. Such an inorganic metal hardmask (MHM) has excellent etch selectivity in plasma etch processes of the trilayer stack. The composition has good long term shelf life and pot life stability based on solution LPC analysis and wafer defect studies, respectively. The material absorbs DUV wavelengths and can be used as a spin-on inorganic or hybrid antireflective coating to control substrate reflectivity under DUV exposure of photoresist. Some of these metal-containing materials can be used as an underlayer in EUV lithography to significantly enhance photospeed. Specific metal hard masks are also developed for via or trench filling applications in IRT processes. The materials have shown good coating and lithography performance with a film thicknesses as low as 10 nm under ArF dry or immersion conditions. In addition, the metal oxide films or residues can be partially or completely removed by using various wet-etching solutions at ambient temperature.

  19. Simultaneous Immersion Mirau Interferometry

    NASA Astrophysics Data System (ADS)

    Lyulko, Oleksandra

    The present work describes a novel imaging technique for label-free no-UV vibration-insensitive imaging of live cells in an epi-illumination geometry. This technique can be implemented in a variety of imaging applications. For example, it can be used for cell targeting as a part of a platform for targeted cell irradiations - single-cell microbeam. The goal of microbeam facilities is to provide biological researchers with tools to study the effects of ionizing radiation on live cells. A common way of cell labeling - fluorescent staining - may alter cellular metabolism and UV illumination presents potential damage for the genetic material. The new imaging technique will allow the researchers to separate radiation-induced effects from the effects caused by confounding factors like fluorescent staining or UV light. Geometry of irradiation endstations at some microbeam facilities precludes the use of transmitted light, e.g. in the Columbia University's Radiological Research Accelerator Facility microbeam endstation, where the ion beam exit window is located just below the sample. Imaging techniques used at such endstations must use epi-illumination. Mirau Interferometry is an epi-illumination, non-stain imaging modality suitable for implementation at a microbeam endstation. To facilitate interferometry and to maintain cell viability, it is desirable that cells stay in cell growth medium during the course of an experiment. To accommodate the use of medium, Immersion Mirau Interferometry has been developed. A custom attachment for a microscope objective has been designed and built for interferometric imaging with the possibility of immersion of the apparatus into cell medium. The implemented data collection algorithm is based on the principles of Phase-Shifting Interferometry. The largest limitation of Phase-Shifting Interferometry is its sensitivity to the vertical position of the sample. In environments where vibration isolation is difficult, this makes image

  20. Immersion echelle spectrograph

    DOEpatents

    Stevens, Charles G.; Thomas, Norman L.

    2000-01-01

    A small spectrograph containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10.sup.-5 cm.sup.2 sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  1. Broadcasting presence: immersive television

    NASA Astrophysics Data System (ADS)

    Harrison, David; Lodge, Nicholas

    2000-06-01

    Being present at a live event is undeniably the most exciting way to experience any entertainment. This is true whether we are talking about a musical concert, a theatrical performance, a cricket match, or even a firework display. The ability to direct your gaze where you wish, to hear sounds from all around you, to experience the immediacy and expectation of an unscripted happening, to feel the buzz of the crowd and to smell the grass or smoke, are all sensory cues which contribute to the powerful experience of being there. This paper examines the ways in which entertainment media have attempted to recreate experiences which encourage the viewer to suspend disbelief and become part of a remote or recorded event. We introduce the concept of immersive television and look at some of the research, spanning many disciplines of science and art, which the ITC is conducting to explore the potential of this new medium.

  2. Immersion in China: lessons learned.

    PubMed

    Wiegerink-Roe, Elizabeth; Rucker-Shannon, Marcia

    2008-01-01

    Students can learn a great deal from international experiences. Although one can learn about another culture from books and discussions, immersing oneself in a culture tends to have a greater impact on both intended and incidental learning. The authors describe the lessons learned and student outcomes during a faculty-led 5-week immersion trip to China. PMID:18317318

  3. Nanometer x-ray lithography

    NASA Astrophysics Data System (ADS)

    Hartley, Frank T.; Khan Malek, Chantal G.

    1999-10-01

    New developments for x-ray nanomachining include pattern transfer onto non-planar surfaces coated with electrodeposited resists using synchrotron radiation x-rays through extremely high-resolution mask made by chemically assisted focused ion beam lithography. Standard UV photolithographic processes cannot maintain sub-micron definitions over large variation in feature topography. The ability of x-ray printing to pattern thin or thick layers of photoresist with high resolution on non-planar surfaces of large and complex topographies with limited diffraction and scattering effects and no substrate reflection is known and can be exploited for patterning microsystems with non-planar 3D geometries as well as multisided and multilayered substrates. Thin conformal coatings of electro-deposited positive and negative tone photoresist have been shown to be x-ray sensitive and accommodate sub-micro pattern transfer over surface of extreme topographical variations. Chemically assisted focused ion beam selective anisotropic erosion was used to fabricate x-ray masks directly. Masks with feature sizes less than 20 nm through 7 microns of gold were made on bulk silicon substrates and x-ray mask membranes. The technique is also applicable to other high density materials. Such masks enable the primary and secondary patterning and/or 3D machining of Nano-Electro-Mechanical Systems over large depths or complex relief and the patterning of large surface areas with sub-optically dimensioned features.

  4. Extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  5. Masks for extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y

    1998-09-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

  6. Semiconductor foundry, lithography, and partners

    NASA Astrophysics Data System (ADS)

    Lin, Burn J.

    2002-07-01

    The semiconductor foundry took off in 1990 with an annual capacity of less than 0.1M 8-inch-equivalent wafers at the 2-mm node. In 2000, the annual capacity rose to more than 10M. Initially, the technology practiced at foundries was 1 to 2 generations behind that at integrated device manufacturers (IDMs). Presently, the progress in 0.13-mm manufacturing goes hand-in-hand with any of the IDMs. There is a two-order of magnitude rise in output and the progress of technology development outpaces IDMs. What are the reasons of the success? Is it possible to sustain the pace? This paper shows the quick rise of foundries in capacity, sales, and market share. It discusses the their uniqueness which gives rise to advantages in conjunction with challenges. It also shows the role foundries take with their customer partners and supplier partners, their mutual dependencies, as well as expectations. What role then does lithography play in the foundries? What are the lithographic challenges to sustain the pace of technology? The experience of technology development and transfer, at one of the major foundries, is used to illustrate the difficulties and progresses made. Looking into the future, as semiconductor manufacturing will become even more expensive and capital investment more prohibitive, we will make an attempt to suggest possible solutions.

  7. Multi-focal multiphoton lithography.

    PubMed

    Ritschdorff, Eric T; Nielson, Rex; Shear, Jason B

    2012-03-01

    Multiphoton lithography (MPL) provides unparalleled capabilities for creating high-resolution, three-dimensional (3D) materials from a broad spectrum of building blocks and with few limitations on geometry, qualities that have been key to the design of chemically, mechanically, and biologically functional microforms. Unfortunately, the reliance of MPL on laser scanning limits the speed at which fabrication can be performed, making it impractical in many instances to produce large-scale, high-resolution objects such as complex micromachines, 3D microfluidics, etc. Previously, others have demonstrated the possibility of using multiple laser foci to simultaneously perform MPL at numerous sites in parallel, but use of a stage-scanning system to specify fabrication coordinates resulted in the production of identical features at each focal position. As a more general solution to the bottleneck problem, we demonstrate here the feasibility for performing multi-focal MPL using a dynamic mask to differentially modulate foci, an approach that enables each fabrication site to create independent (uncorrelated) features within a larger, integrated microform. In this proof-of-concept study, two simultaneously scanned foci produced the expected two-fold decrease in fabrication time, and this approach could be readily extended to many scanning foci by using a more powerful laser. Finally, we show that use of multiple foci in MPL can be exploited to assign heterogeneous properties (such as differential swelling) to micromaterials at distinct positions within a fabrication zone.

  8. Multi-focal multiphoton lithography.

    PubMed

    Ritschdorff, Eric T; Nielson, Rex; Shear, Jason B

    2012-03-01

    Multiphoton lithography (MPL) provides unparalleled capabilities for creating high-resolution, three-dimensional (3D) materials from a broad spectrum of building blocks and with few limitations on geometry, qualities that have been key to the design of chemically, mechanically, and biologically functional microforms. Unfortunately, the reliance of MPL on laser scanning limits the speed at which fabrication can be performed, making it impractical in many instances to produce large-scale, high-resolution objects such as complex micromachines, 3D microfluidics, etc. Previously, others have demonstrated the possibility of using multiple laser foci to simultaneously perform MPL at numerous sites in parallel, but use of a stage-scanning system to specify fabrication coordinates resulted in the production of identical features at each focal position. As a more general solution to the bottleneck problem, we demonstrate here the feasibility for performing multi-focal MPL using a dynamic mask to differentially modulate foci, an approach that enables each fabrication site to create independent (uncorrelated) features within a larger, integrated microform. In this proof-of-concept study, two simultaneously scanned foci produced the expected two-fold decrease in fabrication time, and this approach could be readily extended to many scanning foci by using a more powerful laser. Finally, we show that use of multiple foci in MPL can be exploited to assign heterogeneous properties (such as differential swelling) to micromaterials at distinct positions within a fabrication zone. PMID:22282105

  9. Secondary Electrons in EUV Lithography

    SciTech Connect

    Torok, Justin; Re, Ryan Del; Herbol, Henry; Das, Sanjana; Bocharova, Irina; Paolucci, Angela; Ocola, Leonidas E.; Ventrice Jr., Carl; Lifshin, Eric; Denbeaux, Greg; Brainard, Robert L.

    2013-01-01

    Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUV-induced acid generation is therefore needed for the development of higher performance resists

  10. Cost-effective x-ray lithography

    NASA Astrophysics Data System (ADS)

    Roltsch, Tom J.

    1991-08-01

    The push towards faster, denser VLSI device structures and eventually to ULSI devices means ever-decreasing design rules for IC manufacturers. In order to define patterns on silicon and gallium arsenide substrates with feature sizes of 0.25 microns, lithography, metallization, and electronic materials processing techniques will be pushed beyond current limitations. Of these technologies, lithography in the sub-0.5 micron region appears to be the main obstacle yet to be overcome. As deep-UV optical systems become more expensive and the useful field sized decrease in the attempt to achieve finer resolutions, the question of whether to switch to an alternate lithographic method becomes imminent. X-ray lithography is the leading candidate. In this paper, the question of whether x-ray lithography is economically superior to optical lithography and the cost-effectiveness of x-ray lithography are addressed. Also, the question of how x-ray lithography can be performed in a production environment is considered. First shown is that more elaborate optical systems are simply not going to match x-ray proximity system in terms of resolution because of the need to use exotic lens materials or complicated and ever finer reflection systems, none of which can correct for diffraction effects, yet must be corrected for every other aberration. The economic superiority of a synchrotron-based x- ray lithography beamline is demonstrated in a production facility using a processing-cost model based on Shinji Okazaki's cost-per-bit model. Considered, as well, is the strong possibility that exists for the use of an optically based production line which would use an anode or plasma x-ray stepper to define only the smallest geometries, such as the gate level on a DRAM chip. It is shown that it is unlikely, even pushing the limits of materials and optics, that deep-UV systems will be able to define patterns below 0.35 microns in a production environment. X-ray lithography systems could define 0

  11. Soft Lithography Using Nectar Droplets.

    PubMed

    Biswas, Saheli; Chakrabarti, Aditi; Chateauminois, Antoine; Wandersman, Elie; Prevost, Alexis M; Chaudhury, Manoj K

    2015-12-01

    In spite of significant advances in replication technologies, methods to produce well-defined three-dimensional structures are still at its infancy. Such a limitation would be evident if we were to produce a large array of simple and, especially, compound convex lenses, also guaranteeing that their surfaces would be molecularly smooth. Here, we report a novel method to produce such structures by cloning the 3D shape of nectar drops, found widely in nature, using conventional soft lithography.The elementary process involves transfer of a thin patch of the sugar solution coated on a glass slide onto a hydrophobic substrate on which this patch evolves into a microdroplet. Upon the absorption of water vapor, such a microdroplet grows linearly with time, and its final size can be controlled by varying its exposure time to water vapor. At any stage of the evolution of the size of the drop, its shape can be cloned onto a soft elastomer by following the well-known methods of molding and cross-linking the same. A unique new science that emerges in our attempt to understand the transfer of the sugar patch and its evolution to a spherical drop is the elucidation of the mechanics underlying the contact of a deformable sphere against a solid support intervening a thin liquid film. A unique aspect of this work is to demonstrate that higher level structures can also be generated by transferring even smaller nucleation sites on the surface of the primary lenses and then allowing them to grow by absorption of water vapor. What results at the end is either a well-controlled distribution of smooth hemispherical lenses or compound structures that could have potential applications in the fundamental studies of contact mechanics, wettability, and even in optics. PMID:26563988

  12. Thermal comfort following immersion.

    PubMed

    Guéritée, Julien; Redortier, Bernard; House, James R; Tipton, Michael J

    2015-02-01

    Unlike thermal comfort in air, little research has been undertaken exploring thermal comfort around water sports. We investigated the impact of swimming and cooling in air after swimming on thermal comfort. After 10 min of swimming-and-resting cycles in 28°C water, volunteers wearing two types of garments or in swim briefs, faced winds in 24°C air, at rest or when stepping. Thermal comfort was significantly higher during swimming than resting. Post-immersion, following maximum discomfort, in 45 of 65 tests thermal comfort improved although mean skin temperature was still cooling (0.26 [SD 0.19] °C·min(-1) - max was 0.89°C·min(-1)). When thermal comfort was re-established mean skin temperature was lower than at maximal discomfort in 39 of 54 tests (0.81 [SD 0.58] °C - max difference was 2.68°C). The reduction in thermal discomfort in this scenario could be due to the adaptation of thermoreceptors, or to reductions in cooling rates to levels where discomfort was less stimulated. The relief from the recent discomfort may explain why, later, thermal comfort returned to initial levels in spite of poorer thermal profiles.

  13. Immersion echelle spectrograph

    SciTech Connect

    Stevens, C.G.; Thomas, N.L.

    2000-06-20

    A small spectrograph is disclosed containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10{sup {minus}5}cm{sup 2}sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  14. Immersed interface methods. Final report

    SciTech Connect

    LeVeque, R.J.; Adams, L.M.; Bube, K.P.

    1996-11-01

    Cartesian grid methods encompass a wide variety of techniques used to solve partial differential equations in more than one space dimension on uniform Cartesian grids even when the underlying geometry is complex and not aligned with the grid. The authors` groups work on Immersed Interface Methods (IIM) was originally motivated by the desire to understand and improve the ``Immersed Boundary Method``, developed by Charles Peskin to solve incompressible Navier-Stokes equations in complicated geometries with moving elastic boundaries. This report briefly discusses the development of the Immersed Interface Methods and gives examples of application of the method in solving several partial differential equations.

  15. Lithography and design in partnership: a new roadmap

    NASA Astrophysics Data System (ADS)

    Kahng, Andrew B.

    2008-10-01

    We discuss the notion of a 'shared technology roadmap' between lithography and design from several perspectives. First, we examine cultural gaps and other intrinsic barriers to a shared roadmap. Second, we discuss how lithography technology can change the design technology roadmap. Third, we discuss how design technology can change the lithography technology roadmap. We conclude with an example of the 'flavor' of technology roadmapping activity that can truly bridge lithography and design.

  16. PREVAIL: IBM's e-beam technology for next generation lithography

    NASA Astrophysics Data System (ADS)

    Pfeiffer, Hans C.

    2000-07-01

    PREVAIL - Projection Reduction Exposure with Variable Axis Immersion Lenses represents the high throughput e-beam projection approach to NGL which IBM is pursuing in cooperation with Nikon Corporation as alliance partner. This paper discusses the challenges and accomplishments of the PREVAIL project. The supreme challenge facing all e-beam lithography approaches has been and still is throughput. Since the throughput of e-beam projection systems is severely limited by the available optical field size, the key to success is the ability to overcome this limitation. The PREVAIL technique overcomes field-limiting off-axis aberrations through the use of variable axis lenses, which electronically shift the optical axis simultaneously with the deflected beam so that the beam effectively remains on axis. The resist images obtained with the Proof-of-Concept (POC) system demonstrate that PREVAIL effectively eliminates off- axis aberrations affecting both resolution and placement accuracy of pixels. As part of the POC system a high emittance gun has been developed to provide uniform illumination of the patterned subfield and to fill the large numerical aperture projection optics designed to significantly reduce beam blur caused by Coulomb interaction.

  17. Optimizing the lithography model calibration algorithms for NTD process

    NASA Astrophysics Data System (ADS)

    Hu, C. M.; Lo, Fred; Yang, Elvis; Yang, T. H.; Chen, K. C.

    2016-03-01

    As patterns shrink to the resolution limits of up-to-date ArF immersion lithography technology, negative tone development (NTD) process has been an increasingly adopted technique to get superior imaging quality through employing bright-field (BF) masks to print the critical dark-field (DF) metal and contact layers. However, from the fundamental materials and process interaction perspectives, several key differences inherently exist between NTD process and the traditional positive tone development (PTD) system, especially the horizontal/vertical resist shrinkage and developer depletion effects, hence the traditional resist parameters developed for the typical PTD process have no longer fit well in NTD process modeling. In order to cope with the inherent differences between PTD and NTD processes accordingly get improvement on NTD modeling accuracy, several NTD models with different combinations of complementary terms were built to account for the NTD-specific resist shrinkage, developer depletion and diffusion, and wafer CD jump induced by sub threshold assistance feature (SRAF) effects. Each new complementary NTD term has its definite aim to deal with the NTD-specific phenomena. In this study, the modeling accuracy is compared among different models for the specific patterning characteristics on various feature types. Multiple complementary NTD terms were finally proposed to address all the NTD-specific behaviors simultaneously and further optimize the NTD modeling accuracy. The new algorithm of multiple complementary NTD term tested on our critical dark-field layers demonstrates consistent model accuracy improvement for both calibration and verification.

  18. Photomask lifetime issues in ArF lithography

    NASA Astrophysics Data System (ADS)

    Eschbach, Florence; Coon, Peter; Greenebaum, Barbara; Mittal, Anurag; Sanchez, Peter; Tanzil, Daniel; Ng, Grace; Yun, Henry; Sengupta, Archita

    2005-06-01

    Photomask lifetime has become a challenge since the introduction of high volume manufacturing 193nm photolithograph. Photomask lifetime is being impacted by a broad range of environmental and process factors resulting in inorganics crystals and organic contaminants formation as well as pellicle lifetime issues. Extensive work has been published on strategies for reduction of inorganic crystals photoinduced defects formation mainly focusing on photomask clean process improvements. This paper will focus on identifying root causes for photoinduced contaminants forming within the pellicle space area as well as identify environmental factors which have the potential of impacting pellicle membrane longevity. Outgasing experiments coupled with 193nm laser exposure tests were conducted to decouple and rank reticle/pellicle storage materials as well as pellicle outgasing contributors to photoinduced defects and identify factors impacting pellicle membrance longevity. Analytical test were conducted to compare the relative levels of reticle storage materials and pellicle outgasing contaminants. Experiments aimed at quantifying the fab environment contribution to photoinduced defects formation and impact on pellicle membrane lifetime will be discussed. Environmental conditions minimizing external contributing factors impacting photomask front side photoinduced defects formation and pellicle membrance longevity will be suggested.

  19. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  20. Challenges for immersion lithography extension based on negative tone imaging (NTI) process

    NASA Astrophysics Data System (ADS)

    Shirakawa, Michihiro; Omatsu, Tadashi; Ou, Keiyu; Yonekuta, Yasunori; Hatakeyama, Naoya; Asakawa, Daisuke; Yakushiji, Takashi; Fujita, Mitsuhiro; Muraki, Nanae

    2016-03-01

    Negative tone imaging (NTI) process is a method for obtaining a negative-tone reversal pattern by developing with an organic solvent. As NTI process can break-through the resolution limit of a conventional positive tone development (PTD) process at specific pattern such as trenches and contact holes, it have been applied for a mass production in 20nm and 14nm nodes devices. In NTI system, because a developer is changed from a hydrophilic aqueous solution to a hydrophobic organic solvent, it is possible to review the common resist stack which is optimized for a PTD process. In this paper, we examined the possibility of a bi-layer process using a Si-containing NTI resist. Etching selectivity between the Si-NTI resist and a SOC improved by raising Si-content of the Si-NTI resist, but resolution deteriorates as a trade-off. By suppressing swelling behavior of the Si-NTI resist with a polymer structure control, we overcame this trade-off. As a result, in sub-90 nm pitch L/S and CH patterns, the resolution of the Si-NTI resist achieved comparable level to a conventional NTI resist. In addition, SOC etching was successfully carried out by using the Si-NTI resist pattern as an etching hard mask.

  1. Simple method for measuring acid generation quantum efficiency at 193 nm

    NASA Astrophysics Data System (ADS)

    Szmanda, Charles R.; Kavanagh, Robert J.; Bohland, John F.; Cameron, James F.; Trefonas, Peter, III; Blacksmith, Robert F.

    1999-06-01

    Traditional methods of measuring the Dill C Parameter involve monitoring the absorbance of a resist as a function of exposure. In chemically amplified resist, absorbance changes with exposure are small and frequently have little correlation to the amount of photoacid generated.

  2. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    SciTech Connect

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters {beta}(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their {beta}(t) distributions are insensitive to the photon energy. Dissociation to H{sub 2}CO+C{sub 2}H{sub 4} is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H{sub 2}CO+C{sub 2}H{sub 4}. The observation of H{sub 2} and H atoms, {approx}1% in branching, indicates that products H{sub 2}CO and C{sub 2}H{sub 4} spontaneously decompose to only a small extent. Most HCO, C{sub 2}H{sub 3}, and C{sub 2}H{sub 2} ions originate from dissociative photoionization of products H{sub 2}CO and C{sub 2}H{sub 4}. Except atomic H and H{sub 2}, the photoproducts have large angular anisotropies, {beta}{>=}-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  3. Interplay of three-dimensional profile change and CD variation in 193-nm advanced binary photomasks

    NASA Astrophysics Data System (ADS)

    Lin, Yun-Yue; Su, Sean; Hsush, Wen-Chang; Lien, Ta-Cheng; Chen, Jia-Jen; Lee, Shin-Chang; Yen, Anthony

    2012-06-01

    In this study, the relationship between the depth profile of features and critical dimension (CD) deviation on MoSi binary photomasks is comprehensively investigated using 3D atomic force microscopy (3D-AFM) and aerial image metrology system (AIMS). Detailed profile description based on various surface analysis techniques, was performed to reconstruct the profile at various stages of the mask fabrication process. It is found that profile change and sidewall byproduct formation are strongly correlated with the etching environment, wet cleaning, and post-treatment. These process-induced profile changes subsequently lead to wafer CD change which can be verified by deviation in AIMS and CDSEM measurements. Visualization of these 3D profile and morphology change clearly reveals that etching gas control forms an outer layer, to enhance etch selectivity, film strength, and immunity to the mask cleaning process. Our finding provides a direction for optimizing advanced photomask materials and processing.

  4. Photolysis of solid NH3 and NH3-H2O mixtures at 193 nm

    NASA Astrophysics Data System (ADS)

    Loeffler, M. J.; Baragiola, R. A.

    2010-12-01

    We have studied UV photolysis of solid ammonia and ammonia-dihydrate samples at 40 K, using infrared spectroscopy, mass spectrometry, and microgravimetry. We have shown that in the pure NH3 sample, the main species ejected are NH3, H2, and N2, where the hydrogen and nitrogen increase with laser fluence. This increase in N2 ejection with laser fluence explains the increase in mass loss rate detected by a microbalance. In contrast, for the ammonia-water mixture, we see very weak signals of H2 and N2 in the mass spectrometer, consistent with the very small mass loss during the experiment and with a <5% decrease in the NH3 infrared absorption bands spectroscopy after a fluence of ˜3 × 1019 photons/cm2. The results imply that ammonia-ice mixtures in the outer solar system are relatively stable under solar irradiation.

  5. NXT:1980Di immersion scanner for 7nm and 5nm production nodes

    NASA Astrophysics Data System (ADS)

    de Graaf, Roelof; Weichselbaum, Stefan; Droste, Richard; McLaren, Matthew; Koek, Bert; de Boeij, Wim

    2016-03-01

    Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirements keep progressively scaling down and consequently require system improvements in immersion scanners. The on-product-overlay requirements are approaching levels of only a few nanometers, imposing stringent requirements on the scanner tool design in terms of reproducibility, accuracy and stability. In this paper we report on the performance of the NXT:1980Di immersion scanner. The NXT:1980Di builds upon the NXT:1970Ci, that is widely used for 16nm, 14nm and 10nm high-volume manufacturing. We will discuss the NXT:1980Di system- and sub-system/module enhancements that drive the scanner overlay, focus and productivity performance. Overlay, imaging, focus, productivity and defectivity data will be presented for multiple tools. To further reduce the on-product overlay system performance, alignment sensor contrast improvements as well as active reticle temperature conditioning are implemented on the NXT:1980Di. Reticle temperature conditioning will reduce reticle heating overlay and the higher contrast alignment sensor will improve alignment robustness for processed alignment targets. Due to an increased usage of multiple patterning techniques, an increased number of immersion exposures is required. NXT:1980Di scanner design modifications raised productivity levels from 250wph to 275wph. This productivity enhancement provides lower cost of ownership (CoO) for customers using immersion technology.

  6. Development of MOEMS technology in maskless lithography

    NASA Astrophysics Data System (ADS)

    Smith, David; Klenk, Dieter

    2009-02-01

    Micro-opto-electro-mechanical-systems (MOEMS) have proven to be a facilitating technology in the lithography industry. Recently, there have been significant advancements in digital micromirror device (DMD) based maskless lithography. These advancements have been in the areas of throughput, resolution, accuracy, and cost reduction. This progression in digital micromirror evolution provides considerable opportunities to displace existing lithographic techniques. Precise control of the individual mircormirrors, including scrolling, and full utilization of the FPGA, have allowed DMD-based lithography systems to reach new levels of throughput and repeatability, while reducing production and warranty costs. Throughput levels have far surpassed scanning laser techniques. Chip level cooling technologies allow for higher incident power to be reliably distributed over larger areas of the substrate. Resolution roadmaps are in place to migrate from the current 2400dpi (11μm) to 4800dpi (5.3μm). Without the constraints of mask requirements, mask alignment, storage, and defect analysis are not required, thus increasing accuracy and reducing cost. This contribution will examine the advancements in and benefits of DMD based maskless lithography.

  7. EUV lithography cost of ownership analysis

    SciTech Connect

    Hawryluk, A.M.; Ceglio, N.M.

    1995-01-19

    The cost of fabricating state-of-the-art integrated circuits (ICs) has been increasing and it will likely be economic rather than technical factors that ultimately limit the progress of ICs toward smaller devices. It is estimated that lithography currently accounts for approximately one-third the total cost of fabricating modem ICs({sup 1}). It is expected that this factor will be fairly stable for the forseeable future, and as a result, any lithographic process must be cost-effective before it can be considered for production. Additionally, the capital equipment cost for a new fabrication facility is growing at an exponential rate (2); it will soon require a multibillion dollar investment in capital equipment alone to build a manufacturing facility. In this regard, it is vital that any advanced lithography candidate justify itself on the basis of cost effectiveness. EUV lithography is no exception and close attention to issues of wafer fabrication costs have been a hallmark of its early history. To date, two prior cost analyses have been conducted for EUV lithography (formerly called {open_quotes}Soft X-ray Projection Lithography{close_quotes}). The analysis by Ceglio, et. al., provided a preliminary system design, set performance specifications and identified critical technical issues for cost control. A follow-on analysis by Early, et.al., studied the impact of issues such as step time, stepper overhead, tool utilization, escalating photoresist costs and limited reticle usage on wafer exposure costs. This current study provides updated system designs and specifications and their impact on wafer exposure costs. In addition, it takes a first cut at a preliminary schematic of an EUVL fabrication facility along with an estimate of the capital equipment costs for such a facility.

  8. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  9. Immersible solar heater for fluids

    DOEpatents

    Kronberg, James W.

    1995-01-01

    An immersible solar heater comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  10. Immersion francaise precoce: Maternelle (Early French Immersion: Kindergarten).

    ERIC Educational Resources Information Center

    Burt, Andy; And Others

    An extensive resource manual and teaching guide is presented for the kindergarten teacher in the early French immersion program. The first three chapters contain introductory material discussing the kindergarten child, this particular program, language development in kindergarten, and the role of the kindergarten teacher which is analagous to that…

  11. Tunable lithography masks using chiral nematic fluids

    NASA Astrophysics Data System (ADS)

    Jeong, Hyeon Su; Srinivasarao, Mohan; Jung, Hee-Tae

    2013-03-01

    We present a facile route for pattern formation using chiral nematic fluids as tunable masks in lithography process. The chiral nematic phase prepared by adding a chiral dopant (CB15) to 5CB acted as a set of parallel cylindrical lenses and as a polarization selective photomask for the preparation of periodic line patterns. The pitch of the helical twist was easily controlled by the concentration of chiral agent and the feature size of the resulting pattern was easily tuned. Because of the high mobility of the small liquid crystalline compound, the preparation of chiral nematic fluids based lithography masks requires only a few seconds. This approach has significant advantages including facility, range of surface ordering, and rate of forming periodic arrays. Current affiliation: SK Innovation, Daejeon, Korea

  12. Implementation of assist features in EUV lithography

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

    2015-03-01

    The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

  13. Learning immersion without getting wet

    NASA Astrophysics Data System (ADS)

    Aguilera, Julieta C.

    2012-03-01

    This paper describes the teaching of an immersive environments class on the Spring of 2011. The class had students from undergraduate as well as graduate art related majors. Their digital background and interests were also diverse. These variables were channeled as different approaches throughout the semester. Class components included fundamentals of stereoscopic computer graphics to explore spatial depth, 3D modeling and skeleton animation to in turn explore presence, exposure to formats like a stereo projection wall and dome environments to compare field of view across devices, and finally, interaction and tracking to explore issues of embodiment. All these components were supported by theoretical readings discussed in class. Guest artists presented their work in Virtual Reality, Dome Environments and other immersive formats. Museum professionals also introduced students to space science visualizations, which utilize immersive formats. Here I present the assignments and their outcome, together with insights as to how the creation of immersive environments can be learned through constraints that expose students to situations of embodied cognition.

  14. Immersive Education, an Annotated Webliography

    ERIC Educational Resources Information Center

    Pricer, Wayne F.

    2011-01-01

    In this second installment of a two-part feature on immersive education a webliography will provide resources discussing the use of various types of computer simulations including: (a) augmented reality, (b) virtual reality programs, (c) gaming resources for teaching with technology, (d) virtual reality lab resources, (e) virtual reality standards…

  15. Formation of Magnetic Anisotropy by Lithography

    PubMed Central

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2–0.3 erg/cm2 for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  16. Formation of Magnetic Anisotropy by Lithography.

    PubMed

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2-0.3 erg/cm(2) for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  17. Metallic resist for phase-change lithography

    PubMed Central

    Zeng, Bi Jian; Huang, Jun Zhu; Ni, Ri Wen; Yu, Nian Nian; Wei, Wei; Hu, Yang Zhi; Li, Zhen; Miao, Xiang Shui

    2014-01-01

    Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-change lithography, which uses semiconductor-based resists such as chalcogenide Ge2Sb2Te5 films, was developed to overcome these limitations. Here, instead of chalcogenide, we propose a metallic resist composed of Mg58Cu29Y13 alloy films, which exhibits a considerable difference in etching rate between amorphous and crystalline states. Furthermore, the heat distribution in Mg58Cu29Y13 thin film is better and can be more easily controlled than that in Ge2Sb2Te5 during exposure. We succeeded in fabricating both continuous and discrete patterns on Mg58Cu29Y13 thin films via laser irradiation and wet etching. Our results demonstrate that a metallic resist of Mg58Cu29Y13 is suitable for phase change lithography, and this type of resist has potential due to its outstanding characteristics. PMID:24931505

  18. A compact X-ray lithography lattice using superferric magnets

    NASA Astrophysics Data System (ADS)

    Swenson, C. A.; Huson, F. R.; Mackay, W. W.; Chen, L. K.; Ohnuma, S.

    A conceptual lattice design for a very compact superconducting synchrotron dedicated to X-ray lithography is presented. The synchrotron radiation produced in the high field superconducting magnets has a critical wavelength of 10 angstrom at a beam energy of about 787 MeV. The size and angular divergence of the beam in this lattice can satisfy future requirements for X-ray lithography. An optimization of the lithography parameters is presented.

  19. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  20. Hybrid immersed interface-immersed boundary methods for AC dielectrophoresis

    SciTech Connect

    Hossan, Mohammad Robiul; Dillon, Robert; Dutta, Prashanta

    2014-08-01

    Dielectrophoresis, a nonlinear electrokinetic transport mechanism, has become popular in many engineering applications including manipulation, characterization and actuation of biomaterials, particles and biological cells. In this paper, we present a hybrid immersed interface–immersed boundary method to study AC dielectrophoresis where an algorithm is developed to solve the complex Poisson equation using a real variable formulation. An immersed interface method is employed to obtain the AC electric field in a fluid media with suspended particles and an immersed boundary method is used for the fluid equations and particle transport. The convergence of the proposed algorithm as well as validation of the hybrid scheme with experimental results is presented. In this paper, the Maxwell stress tensor is used to calculate the dielectrophoretic force acting on particles by considering the physical effect of particles in the computational domain. Thus, this study eliminates the approximations used in point dipole methods for calculating dielectrophoretic force. A comparative study between Maxwell stress tensor and point dipole methods for computing dielectrophoretic forces are presented. The hybrid method is used to investigate the physics of dielectrophoresis in microfluidic devices using an AC electric field. The numerical results show that with proper design and appropriate selection of applied potential and frequency, global electric field minima can be obtained to facilitate multiple particle trapping by exploiting the mechanism of negative dielectrophoresis. Our numerical results also show that electrically neutral particles form a chain parallel to the applied electric field irrespective of their initial orientation when an AC electric field is applied. This proposed hybrid numerical scheme will help to better understand dielectrophoresis and to design and optimize microfluidic devices.

  1. 3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography.

    PubMed

    Ulmeanu, M; Grubb, M P; Jipa, F; Quignon, B; Ashfold, M N R

    2015-06-01

    We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates.

  2. Authoring Immersive Mixed Reality Experiences

    NASA Astrophysics Data System (ADS)

    Misker, Jan M. V.; van der Ster, Jelle

    Creating a mixed reality experience is a complicated endeavour. From our practice as a media lab in the artistic domain we found that engineering is “only” a first step in creating a mixed reality experience. Designing the appearance and directing the user experience are equally important for creating an engaging, immersive experience. We found that mixed reality artworks provide a very good test bed for studying these topics. This chapter details three steps required for authoring mixed reality experiences: engineering, designing and directing. We will describe a platform (VGE) for creating mixed reality environments that incorporates these steps. A case study (EI4) is presented in which this platform was used to not only engineer the system, but in which an artist was given the freedom to explore the artistic merits of mixed reality as an artistic medium, which involved areas such as the look and feel, multimodal experience and interaction, immersion as a subjective emotion and game play scenarios.

  3. Immersible solar heater for fluids

    DOEpatents

    Hazen, T.C.; Fliermans, C.B.

    1994-01-01

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  4. Immersible solar heater for fluids

    DOEpatents

    Kronberg, J.W.

    1995-07-11

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater. 11 figs.

  5. High Efficiency Germanium Immersion Gratings

    SciTech Connect

    Kuzmenko, P J; Davis, P J; Little, S L; Little, L M; Bixler, J V

    2006-05-01

    We have fabricated several germanium immersion gratings by single crystal, single point diamond flycutting on an ultra-precision lathe. Use of a dead sharp tool produces groove corners less than 0.1 micron in radius and consequently high diffraction efficiency. We measured first order efficiencies in immersion of over 80% at 10.6 micron wavelength. Wavefront error was low averaging 0.06 wave rms (at 633 nm) across the full aperture. The grating spectral response was free of ghosts down to our detection limit of 1 part in 10{sup 4}. Scatter should be low based upon the surface roughness. Measurement of the spectral line profile of a CO{sub 2} laser sets an upper bound on total integrated scatter of 0.5%.

  6. Immersive Environments - A Connectivist Approach

    NASA Astrophysics Data System (ADS)

    Loureiro, Ana; Bettencourt, Teresa

    We are conducting a research project with the aim of achieving better and more efficient ways to facilitate teaching and learning in Higher Level Education. We have chosen virtual environments, with particular emphasis to Second Life® platform augmented by web 2.0 tools, to develop the study. The Second Life® environment has some interesting characteristics that captured our attention, it is immersive; it is a real world simulator; it is a social network; it allows real time communication, cooperation, collaboration and interaction; it is a safe and controlled environment. We specifically chose tools from web 2.0 that enable sharing and collaborative way of learning. Through understanding the characteristics of this learning environment, we believe that immersive learning along with other virtual tools can be integrated in today's pedagogical practices.

  7. Compact Imaging Spectrometer Utilizing Immersed Gratings

    DOEpatents

    Chrisp, Michael P.; Lerner, Scott A.; Kuzmenko, Paul J.; Bennett, Charles L.

    2006-03-21

    A compact imaging spectrometer with an immersive diffraction grating that compensates optical distortions. The imaging spectrometer comprises an entrance slit for transmitting light, a system for receiving the light and directing the light, an immersion grating, and a detector array. The entrance slit, the system for receiving the light, the immersion grating, and the detector array are positioned wherein the entrance slit transmits light to the system for receiving the light and the system for receiving the light directs the light to the immersion grating and the immersion grating receives the light and directs the light through an optical element to the detector array.

  8. Fabrication of metallic nanowires and nanoribbons using laser interference lithography and shadow lithography

    SciTech Connect

    Park, Joong- Mok; Nalwa, Kanwar Singh; Leung, Wai; Constant, Kristen; Chaudhary, Sumit; Ho, Kai-Ming

    2010-04-30

    Ordered and free-standing metallic nanowires were fabricated by e-beam deposition on patterned polymer templates made by interference lithography. The dimensions of the nanowires can be controlled through adjustment of deposition conditions and polymer templates. Grain size, polarized optical transmission and electrical resistivity were measured with ordered and free-standing nanowires.

  9. Overview of Lithography: Challenges and Metrologies

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    2003-09-01

    Semiconductor microlithography is rapidly reaching a point where it becomes exceedingly difficult to shrink features at historical rates. We will no longer be able to increase process windows by going to shorter wavelengths with optical lithography, because we are running out of useable wavelengths. This necessitates either the implementation of processes with very small process windows or a transition to radically new types of lithographic technologies. Either situation presents numerous challenges to lithographers and metrologists. Particularly daunting are the requirements for gate linewidth control for microprocessors. Reducing variation requires improvement in the components of variation, each of which must be smaller than the total result. In order to improve a particular parameter, such as CD variation, metrology must be adequate for identifying improvements in the components of that parameter, not just the total. This places very tight requirements on metrology capability. Departing from optical lithography into the Brave New World of Next Generation Lithography will necessitate new metrology capabilities in several areas, not just the measurement of features on wafers. Creating the capabilities that will be needed in the future requires that funding be available for the requisite development. The need for huge amounts of funding to develop new lithographic technologies will likely necessitate a slowing down in the pace at which we shrink features. It is absolutely essential that a balance is re-established between the prices that purchasers of chips are willing to pay and chip development and manufacturing costs. This will be very challenging with 300 mm wafer fabs coming on-line, since low chip prices have historically been associated with overcapacity in the semiconductor industry, and it is anticipated that new lithographic technologies will be very expensive.

  10. Image-projection ion-beam lithography

    SciTech Connect

    Miller, P.A. )

    1989-09-01

    Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He{sup +} ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified.

  11. The next generation of maskless lithography

    NASA Astrophysics Data System (ADS)

    Diez, Steffen

    2016-02-01

    The essential goal for fast prototyping of microstructures is to reduce the cycle time. Conventional methods up to now consist of creating designs with a CAD software, then fabricating or purchasing a Photomask and finally using a mask aligner to transfer the pattern to the photoresist. The new Maskless Aligner (MLA) enables to expose the pattern directly without fabricating a mask, which results in a significantly shorter prototyping cycle. To achieve this short prototyping cycle, the MLA has been improved in many aspects compared to other direct write lithography solutions: exposure speed, user interface, ease of operation and flexibility.

  12. Nanoimprint lithography: an enabling technology for nanophotonics

    NASA Astrophysics Data System (ADS)

    Yao, Yuhan; Liu, He; Wang, Yifei; Li, Yuanrui; Song, Boxiang; Bratkovsk, Alexandre; Wang, Shih-Yuan; Wu, Wei

    2015-11-01

    Nanoimprint lithography (NIL) is an indispensable tool to realize a fast and accurate nanoscale patterning in nanophotonics due to high resolution and high yield. The number of publication on NIL has increased from less than a hundred per year to over three thousand per year. In this paper, the most recent developments on NIL patterning transfer processes and its applications on nanophotonics are discussed and reviewed. NIL has been opening up new opportunities for nanophotonics, especially in fabricating optical meta-materials. With more researches on this low-cost high-throughput fabrication technology, we should anticipate a brighter future for nanophotonics and NIL.

  13. Wave and Particle in Molecular Interference Lithography

    SciTech Connect

    Juffmann, Thomas; Truppe, Stefan; Geyer, Philipp; Major, Andras G.; Arndt, Markus; Deachapunya, Sarayut; Ulbricht, Hendrik

    2009-12-31

    The wave-particle duality of massive objects is a cornerstone of quantum physics and a key property of many modern tools such as electron microscopy, neutron diffraction or atom interferometry. Here we report on the first experimental demonstration of quantum interference lithography with complex molecules. Molecular matter-wave interference patterns are deposited onto a reconstructed Si(111) 7x7 surface and imaged using scanning tunneling microscopy. Thereby both the particle and the quantum wave character of the molecules can be visualized in one and the same image. This new approach to nanolithography therefore also represents a sensitive new detection scheme for quantum interference experiments.

  14. Plasma formed ion beam projection lithography system

    DOEpatents

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  15. Immersive Earth: Teaching Earth and Space with inexpensive immersive technology

    NASA Astrophysics Data System (ADS)

    Reiff, P. H.; Sumners, C.; Law, C. C.; Handron, K.

    2003-12-01

    In 1995 we pioneered "Space Update", the Digital Library for the rest of us", software that was so simple that a child could use it without a keyboard and yet would allow one-click updating of the daily earth and space science images without the dangers of having an open web browser on display. Thanks to NASA support, it allowed museums and schools to have a powerful exhibit for a tiny price. Over 40,000 disks in our series have been distributed so far to educators and the public. In 2003, with our partners we are again revolutionizing educational technology with a low-cost hardware and software solution to creating and displaying immersive content. Recently selected for funding as part of the REASoN competition, Immersive Earth is a partnership of scientists, museums, educators, and content providers. The hardware consists of a modest projector with a special fisheye lens to be used in an inflatable dome which many schools already have. This, coupled with a modest personal computer, can now easily project images and movies of earth and space, allows training students in 3-D content at a tiny fraction of the cost of a cave or fullscale dome theater. Another low-cost solution is the "Imove" system, where spherical movies can play on a personal computer, with the user changing the viewing direction with a joystick. We were the first to create immersive earth science shows, remain the leader in creating educational content that people want to see. We encourage people with "allsky" images or movies to bring it and see what it looks like inside a dome! Your content could be in our next show!

  16. Economic consequences of high throughput maskless lithography

    NASA Astrophysics Data System (ADS)

    Hartley, John G.; Govindaraju, Lakshmi

    2005-11-01

    Many people in the semiconductor industry bemoan the high costs of masks and view mask cost as one of the significant barriers to bringing new chip designs to market. All that is needed is a viable maskless technology and the problem will go away. Numerous sites around the world are working on maskless lithography but inevitably, the question asked is "Wouldn't a one wafer per hour maskless tool make a really good mask writer?" Of course, the answer is yes, the hesitation you hear in the answer isn't based on technology concerns, it's financial. The industry needs maskless lithography because mask costs are too high. Mask costs are too high because mask pattern generators (PG's) are slow and expensive. If mask PG's become much faster, mask costs go down, the maskless market goes away and the PG supplier is faced with an even smaller tool demand from the mask shops. Technical success becomes financial suicide - or does it? In this paper we will present the results of a model that examines some of the consequences of introducing high throughput maskless pattern generation. Specific features in the model include tool throughput for masks and wafers, market segmentation by node for masks and wafers and mask cost as an entry barrier to new chip designs. How does the availability of low cost masks and maskless tools affect the industries tool makeup and what is the ultimate potential market for high throughput maskless pattern generators?

  17. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  18. Mask and lithography techniques for FPD

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Wahlsten, M.; Sundelin, E.; Hansson, G.; Svensson, A.

    2015-09-01

    Large-field projection lithography for FPDs has developed gradually since the 90s. The LCD screen technology has remained largely unchanged and incremental development has given us better image quality, larger screen sizes, and above all lower cost per area. Recently new types of mobile devices with very high pixel density and/or OLED displays have given rise to dramatically higher requirem ents on photomask technology. Devices with 600 ppi or m ore need lithography with higher optical resolution and better linewidth control. OLED di splays pose new challenges with high sensitivity to transistor parameters and to capacitive cross-talk. New mask requirements leads to new maskwriter requirements and Mycronic has developed a new generation of large -area mask writers with significantly improved properties. This paper discusses and shows data for the improved writers. Mask production to high er quality stan dards also need metrology to verify the quality and Mycronic has introduced a 2D metrology tool with accuracy adequate for current and future masks. New printing or additive methods of producing disp lays on plastic or metal foil will make low-cost disp lays available. This inexpensive type of disp lays will exist side by side with the photographic quality displays of TVs and mobile devices, which will continue to be a challenge in terms of mask and production quality.

  19. Inverse lithography source optimization via compressive sensing.

    PubMed

    Song, Zhiyang; Ma, Xu; Gao, Jie; Wang, Jie; Li, Yanqiu; Arce, Gonzalo R

    2014-06-16

    Source optimization (SO) has emerged as a key technique for improving lithographic imaging over a range of process variations. Current SO approaches are pixel-based, where the source pattern is designed by solving a quadratic optimization problem using gradient-based algorithms or solving a linear programming problem. Most of these methods, however, are either computational intensive or result in a process window (PW) that may be further extended. This paper applies the rich theory of compressive sensing (CS) to develop an efficient and robust SO method. In order to accelerate the SO design, the source optimization is formulated as an underdetermined linear problem, where the number of equations can be much less than the source variables. Assuming the source pattern is a sparse pattern on a certain basis, the SO problem is transformed into a l1-norm image reconstruction problem based on CS theory. The linearized Bregman algorithm is applied to synthesize the sparse optimal source pattern on a representation basis, which effectively improves the source manufacturability. It is shown that the proposed linear SO formulation is more effective for improving the contrast of the aerial image than the traditional quadratic formulation. The proposed SO method shows that sparse-regularization in inverse lithography can indeed extend the PW of lithography systems. A set of simulations and analysis demonstrate the superiority of the proposed SO method over the traditional approaches.

  20. Inverse lithography technique for advanced CMOS nodes

    NASA Astrophysics Data System (ADS)

    Villaret, Alexandre; Tritchkov, Alexander; Entradas, Jorge; Yesilada, Emek

    2013-04-01

    Resolution Enhancement Techniques have continuously improved over the last decade, driven by the ever growing constraints of lithography process. Despite the large number of RET applied, some hotspot configurations remain challenging for advanced nodes due to aggressive design rules. Inverse Lithography Technique (ILT) is evaluated here as a substitute to the dense OPC baseline. Indeed ILT has been known for several years for its near-to-ideal mask quality, while also being potentially more time consuming in terms of OPC run and mask processing. We chose to evaluate Mentor Graphics' ILT engine "pxOPCTM" on both lines and via hotspot configurations. These hotspots were extracted from real 28nm test cases where the dense OPC solution is not satisfactory. For both layer types, the reference OPC consists of a dense OPC engine coupled to rule-based and/or model-based assist generation method. The same CM1 model is used for the reference and the ILT OPC. ILT quality improvement is presented through Optical Rule Check (ORC) results with various adequate detectors. Several mask manufacturing rule constraints (MRC) are considered for the ILT solution and their impact on process ability is checked after mask processing. A hybrid OPC approach allowing localized ILT usage is presented in order to optimize both quality and runtime. A real mask is prepared and fabricated with this method. Finally, results analyzed on silicon are presented to compare localized ILT to reference dense OPC.

  1. Gestural interfaces for immersive environments

    NASA Astrophysics Data System (ADS)

    Margolis, Todd

    2014-02-01

    We are witnessing an explosion of new forms of Human Computer Interaction devices lately for both laboratory research and home use. With these new affordance in user interfaces (UI), how can gestures be used to improve interaction for large scale immersive display environments. Through the investigation of full body, head and hand tracking, this paper will discuss various modalities of gesture recognition and compare their usability to other forms of interactivity. We will explore a specific implementation of hand gesture tracking within a large tiled display environment for use with common collaborative media interaction activities.

  2. Source mask optimization study based on latest Nikon immersion scanner

    NASA Astrophysics Data System (ADS)

    Zhu, Jun; Wei, Fang; Chen, Lijun; Zhang, Chenming; Zhang, Wei; Nishinaga, Hisashi; El-Sewefy, Omar; Gao, Gen-Sheng; Lafferty, Neal; Meiring, Jason; Zhang, Recoo; Zhu, Cynthia

    2016-03-01

    The 2x nm logic foundry node has many challenges since critical levels are pushed close to the limits of low k1 ArF water immersion lithography. For these levels, improvements in lithographic performance can translate to decreased rework and increased yield. Source Mask Optimization (SMO) is one such route to realize these image fidelity improvements. During SMO, critical layout constructs are intensively optimized in both the mask and source domain, resulting in a solution for maximum lithographic entitlement. From the hardware side, advances in source technology have enabled free-form illumination. The approach allows highly customized illumination, enabling the practical application of SMO sources. The customized illumination sources can be adjusted for maximum versatility. In this paper, we present a study on a critical layer of an advanced foundry logic node using the latest ILT based SMO software, paired with state-of-the-art scanner hardware and intelligent illuminator. Performance of the layer's existing POR source is compared with the ideal SMO result and the installed source as realized on the intelligent illuminator of an NSR-S630D scanner. Both simulation and on-silicon measurements are used to confirm that the performance of the studied layer meets established specifications.

  3. Immersive interfaces for engagement and learning.

    PubMed

    Dede, Chris

    2009-01-01

    Immersion is the subjective impression that one is participating in a comprehensive, realistic experience. Interactive media now enable various degrees of digital immersion. The more a virtual immersive experience is based on design strategies that combine actional, symbolic, and sensory factors, the greater the participant's suspension of disbelief that she or he is "inside" a digitally enhanced setting. Studies have shown that immersion in a digital environment can enhance education in at least three ways: by allowing multiple perspectives, situated learning, and transfer. Further studies are needed on the capabilities of immersive media for learning, on the instructional designs best suited to each type of immersive medium, and on the learning strengths and preferences these media develop in users.

  4. Single spherical mirror optic for extreme ultraviolet lithography enabled by inverse lithography technology.

    PubMed

    Scranton, Gregg; Bhargava, Samarth; Ganapati, Vidya; Yablonovitch, Eli

    2014-10-20

    Traditionally, aberration correction in extreme ultraviolet (EUV) projection optics requires the use of multiple lossy mirrors, which results in prohibitively high source power requirements. We analyze a single spherical mirror projection optical system where aberration correction is built into the mask itself, through Inverse Lithography Technology (ILT). By having fewer mirrors, this would reduce the power requirements for EUV lithography. We model a single spherical mirror system with orders of magnitude more spherical aberration than would ever be tolerated in a traditional multiple mirror system. By using ILT, (implemented by an adjoint-based gradient descent optimization algorithm), we design photomasks that successfully print test patterns, in spite of these enormous aberrations. This mathematical method was tested with a 6 plane wave illumination source. Nonetheless, it would have poor power throughput from a totally incoherent source. PMID:25401536

  5. Improved near field lithography by surface plasmon resonance

    NASA Astrophysics Data System (ADS)

    Zeng, Beibei; Zhao, Yanhui; Fang, Liang; Wang, Changtao; Luo, Xiangang

    2009-05-01

    Conventionally, the finest pattern obtained in optical lithography is determined by wavelength and numerical aperture of optical system, due to diffraction effect. This principle delivers theoretical obstacles for nano lithography using conventional light source, like Hg lamp. According to theory, this obstacle can be circumvented with near field lithography (NFL) technique, just by confining the mask and photo resist into sub-wavelength dimensions. Sub-wavelength patterns with features down to 100nm can be realized in the NFL, as demonstrated numerically and experimentally in many papers. One obvious problem associated with NFL is that low efficiency in the lithography process, since it is difficult to transmit through sub-wavelength scaled apertures in the mask. This usually results in the deleterious effect to the patterns on photo resist. In this paper, we demonstrate that the extraordinary optical transmission (EOT) effect helps to solve this problem. It is found that noble metal, instead of chromium, usually gives much greater transmission when employed as mask material. The enhancement is contributed to resonant excitation of surface plasmon mode. Further, the transmission can be enhanced by appropriately design of patterns. The polarization of illumination light affects lithography efficiency as well. As illustrative examples, mask patterns like lines group, grating structure and holes array are designed and simulated with greatly improved lithography efficiency. This method is believed to have potential applications in nano lithography.

  6. The immersion foot syndrome. 1946.

    PubMed

    Ungley, C C; Channell, G D; Richards, R L

    2003-01-01

    1. Prolonged exposure of the extremities to cold insufficient to cause tissue freezing produces a well-defined syndrome. 'Immersion foot' is one of the descriptive but inaccurate terms applied to this syndrome. The clinical features, aetiology, pathology, prevention, and treatment of immersion foot are considered in detail. A discussion on pathogenesis is also included. 2. In the natural history of a typical case of immersion foot there are four stages: the period of exposure and the pre-hyperaemic, hyperaemic, and post-hyperaemic stages. 3. During exposure and immediately after rescue the feet are cold, numb, swollen, and pulseless. Intense vasoconstriction sufficient to arrest blood-flow is believed to be the predominant factor during this phase. 4. This is followed by a period of intense hyperaemia, increased swelling, and severe pain. Hyperaemia is due to the release in chilled and ischaemic tissues of relatively stable vasodilator metabolites; pain may be the result of relative anoxia of sensory nerve-endings. 5. Within 7-10 days of rescue the intense hyperaemia and swelling subside and pain diminishes in intensity. A lesser degree of hyperaemia may persist for several weeks. Objective disturbances of sensation and sweating and muscular atrophy and paralysis now become apparent. These findings are correlated with damage to the peripheral nerves. 6. After several weeks the feet become cold-sensitive; when exposed to low temperature they cool abnormally and may remain cold for several hours. Hyperhidrosis frequently accompanies this cold-sensitivity. The factors responsible for these phenomena are incompletely understood; several possible explanations are considered. 7. Severe cases may develop blisters and gangrene. The latter is usually superficial and massive loss of tissue is rare. 8. The hands may be affected but seldom as severely as the feet. The essential features of immersion hand are the same as those of immersion foot. 9. Prognosis depends upon

  7. Immersion in water during labor and delivery.

    PubMed

    2014-04-01

    Immersion in water has been suggested as a beneficial alternative for labor, delivery, or both and over the past decades has gained popularity in many parts of the world. Immersion in water during the first stage of labor may be associated with decreased pain or use of anesthesia and decreased duration of labor. However, there is no evidence that immersion in water during the first stage of labor otherwise improves perinatal outcomes, and it should not prevent or inhibit other elements of care. The safety and efficacy of immersion in water during the second stage of labor have not been established, and immersion in water during the second stage of labor has not been associated with maternal or fetal benefit. Given these facts and case reports of rare but serious adverse effects in the newborn, the practice of immersion in the second stage of labor (underwater delivery) should be considered an experimental procedure that only should be performed within the context of an appropriately designed clinical trial with informed consent. Facilities that plan to offer immersion in the first stage of labor need to establish rigorous protocols for candidate selection, maintenance and cleaning of tubs and immersion pools, infection control procedures, monitoring of mothers and fetuses at appropriate intervals while immersed, and immediately and safely moving women out of the tubs if maternal or fetal concerns develop.

  8. Extension of optical lithography by mask-litho integration with computational lithography

    NASA Astrophysics Data System (ADS)

    Takigawa, T.; Gronlund, K.; Wiley, J.

    2010-05-01

    Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

  9. Pathogenesis of sudden death following water immersion (immersion syndrome)

    NASA Technical Reports Server (NTRS)

    Buhring, M.; Spies, H. F.

    1981-01-01

    Sympathetic activity under cold stress is investigated. Predominantly vagal cardio-depressive reflexes are discussed besides currently known mechanisms of sudden death after water immersion. Pronounced circulatory centralization in diving animals as well as following exposure in cold water indicates additional sympathetic activity. In cold water baths of 15 C, measurements indicate an increase in plasma catecholamine levels by more than 300 percent. This may lead to cardiac arrhythmias by the following mechanisms: cold water essentially induces sinus bradycardia; brady-and tachycardiarrhythmias may supervene as secondary complications; sinusbradycardia may be enhanced by sympathetic hypertonus. Furthermore, ectopic dysrhythmias are liable to be induced by the strictly sympathetic innervation of the ventricle. Myocardial ischemia following a rise in peripheral blood pressure constitutes another arrhythmogenic factor. Some of these reactions are enhanced by alcohol intoxication.

  10. Immersion and dry scanner extensions for sub-10nm production nodes

    NASA Astrophysics Data System (ADS)

    Weichselbaum, Stefan; Bornebroek, Frank; de Kort, Toine; Droste, Richard; de Graaf, Roelof F.; van Ballegoij, Rob; Botter, Herman; McLaren, Matthew G.; de Boeij, Wim P.

    2015-03-01

    Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NXT platform have been introduced; among others, the scanner is equipped with exposure stages with better dynamics and thermal control. Grid accuracy improvements with respect to calibration, setup, stability, and layout dependency tighten MMO performance and enable mix and match scanner operation. The same platform improvements also benefit focus control. Improvements in detectability and reproducibility of low contrast alignment marks enhance the alignment solution window for 10nm logic processes and beyond. The system's architecture allows dynamic use of high-order scanner optimization based on advanced actuators of projection lens and scanning stages. This enables a holistic optimization approach for the scanner, the mask, and the patterning process. Productivity scanner design modifications esp. stage speeds and optimization in metrology schemes provide lower layer costs for customers using immersion lithography as well as conventional dry technology. Imaging, overlay, focus, and productivity data is presented, that demonstrates 10nm and 7nm node litho-capability for both (immersion & dry) platforms.

  11. Hybrid hotspot detection using regression model and lithography simulation

    NASA Astrophysics Data System (ADS)

    Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki; Pan, David Z.

    2016-03-01

    As minimum feature sizes shrink, unexpected hotspots appear on wafers. Therefore, it is important to detect and fix these hotspots at design stage to reduce development time and manufacturing cost. Currently, as the most accurate approach, lithography simulation is widely used to detect such hotspots. However, it is known to be time-consuming. This paper proposes a novel aerial image synthesizing method using regression and minimum lithography simulation for only hotspot detection. Experimental results show hotspot detection on the proposed method is equivalent compared with the results on the conventional hotspot detection method which uses only lithography simulation with much less computational cost.

  12. Workshop on compact storage ring technology: applications to lithography

    SciTech Connect

    Not Available

    1986-05-30

    Project planning in the area of x-ray lithography is discussed. Three technologies that are emphasized are the light source, the lithographic technology, and masking technology. The needs of the semiconductor industry in the lithography area during the next decade are discussed, particularly as regards large scale production of high density dynamic random access memory devices. Storage ring parameters and an overall exposure tool for x-ray lithography are addressed. Competition in this area of technology from Germany and Japan is discussed briefly. The design of a storage ring is considered, including lattice design, magnets, and beam injection systems. (LEW)

  13. Lithography aspects of dual-damascene interconnect technology

    NASA Astrophysics Data System (ADS)

    Maenhoudt, Mireille; Van Goidsenhoven, Diziana; Pollentier, Ivan K.; Ronse, Kurt G.; Lepage, Muriel; Struyf, Herbert; Van Hove, Marleen

    2001-04-01

    The introduction of Cu and low-k dielectrics in back-end-of- line processes has serious implications for lithography. Different low-k material shave different reflective properties and also the potential use of hard masks has consequences for lithography. Furthermore, depending on the integration scheme that is chosen, various issues for lithography and etch are showing up. While the first photo step is on a planar substrate, the second photo has to cover a topography. This can have large implications on CD uniformity and the amount of material left for the subsequent etch.

  14. Lithography trends based on projections of the ITRS (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Arden, Wolfgang

    2005-06-01

    The microelectronic industry has gone through an enormous technical evolution in the last four decades. Both the tech-nological and economic challenges of microelectronics were increasing consistently in the past few years. This paper discusses the future trends in micro- and nano-technologies with special emphasis on lithography. The trends of minia-turization will be sketched with reference to the International Technology Roadmap for Semiconductors (ITRS). After a description of general trends in technology node timing, an overview will be given on the future lithography require-ments and the technical solutions including options for post-optical lithography as, for example, Extreme UV.

  15. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  16. Inverse lithography using sparse mask representations

    NASA Astrophysics Data System (ADS)

    Ionescu, Radu C.; Hurley, Paul; Apostol, Stefan

    2015-03-01

    We present a novel optimisation algorithm for inverse lithography, based on optimization of the mask derivative, a domain inherently sparse, and for rectilinear polygons, invertible. The method is first developed assuming a point light source, and then extended to general incoherent sources. What results is a fast algorithm, producing manufacturable masks (the search space is constrained to rectilinear polygons), and flexible (specific constraints such as minimal line widths can be imposed). One inherent trick is to treat polygons as continuous entities, thus making aerial image calculation extremely fast and accurate. Requirements for mask manufacturability can be integrated in the optimization without too much added complexity. We also explain how to extend the scheme for phase-changing mask optimization.

  17. Anamorphic high-NA EUV lithography optics

    NASA Astrophysics Data System (ADS)

    Migura, Sascha; Kneer, Bernhard; Neumann, Jens Timo; Kaiser, Winfried; van Schoot, Jan

    2015-09-01

    EUV lithography (EUVL) for a limit resolution below 8 nm requires the numerical aperture (NA) of the projection optics to be larger than 0.50. For such a high-NA optics a configuration of 4x magnification, full field size of 26 x 33 mm² and 6'' mask is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable mask shadowing effects. These shadowing effects can only be controlled by increasing the magnification, hence reducing the system productivity or demanding larger mask sizes. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm² but utilizing existing 6'' mask infrastructure. We discuss the optical solutions for such anamorphic high-NA EUVL.

  18. Resist materials for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Toriumi, Minoru; Ishikawa, Seiichi; Miyoshi, Seiro; Naito, Takuya; Yamazaki, Tamio; Watanabe, Manabu; Itani, Toshiro

    2001-08-01

    Fluoropolymers are key materials for single layer resists of 157nm lithography. We have been studying fluoropolymers to identify their potential for base resins of 157nm photoresist. Many fluoropolymers showed high optical transparencies, with absorption coefficients of 0.01micrometers -1 to 2micrometers -1 at 157nm, and dry- etching resistance comparable to an ArF resist, and non- swelling solubility in the standard developer. Positive- tone resists were formulated using fluoropolymers that fulfill practical resist requirements. They showed good sensitivities, from 1 mJ/cm(superscript 2 to 10 mJ/cm2, and contrast in the sensitivity curves. They were able to be patterned using a F2 laser microstepper.

  19. Femtolitre chemistry assisted by microfluidic pen lithography

    PubMed Central

    Carbonell, Carlos; Stylianou, Kyriakos C.; Hernando, Jordi; Evangelio, Emi; Barnett, Sarah A.; Nettikadan, Saju; Imaz, Inhar; Maspoch, Daniel

    2013-01-01

    Chemical reactions at ultrasmall volumes are becoming increasingly necessary to study biological processes, to synthesize homogenous nanostructures and to perform high-throughput assays and combinatorial screening. Here we show that a femtolitre reaction can be realized on a surface by handling and mixing femtolitre volumes of reagents using a microfluidic stylus. This method, named microfluidic pen lithography, allows mixing reagents in isolated femtolitre droplets that can be used as reactors to conduct independent reactions and crystallization processes. This strategy overcomes the high-throughput limitations of vesicles and micelles and obviates the usually costly step of fabricating microdevices and wells. We anticipate that this process enables performing distinct reactions (acid-base, enzymatic recognition and metal-organic framework synthesis), creating multiplexed nanoscale metal-organic framework arrays, and screening combinatorial reactions to evaluate the crystallization of novel peptide-based materials. PMID:23863998

  20. Lithography process window analysis with calibrated model

    NASA Astrophysics Data System (ADS)

    Zhou, Wenzhan; Yu, Jin; Lo, James; Liu, Johnson

    2004-05-01

    As critical-dimension shrink below 0.13 μm, the SPC (Statistical Process Control) based on CD (Critical Dimension) control in lithography process becomes more difficult. Increasing requirements of a shrinking process window have called on the need for more accurate decision of process window center. However in practical fabrication, we found that systematic error introduced by metrology and/or resist process can significantly impact the process window analysis result. Especially, when the simple polynomial functions are used to fit the lithographic data from focus exposure matrix (FEM), the model will fit these systematic errors rather than filter them out. This will definitely impact the process window analysis and determination of the best process condition. In this paper, we proposed to use a calibrated first principle model to do process window analysis. With this method, the systematic metrology error can be filtered out efficiently and give a more reasonable window analysis result.

  1. Nanoimprint lithography using disposable biomass template

    NASA Astrophysics Data System (ADS)

    Hanabata, Makoto; Takei, Satoshi; Sugahara, Kigen; Nakajima, Shinya; Sugino, Naoto; Kameda, Takao; Fukushima, Jiro; Matsumoto, Yoko; Sekiguchi, Atsushi

    2016-04-01

    A novel nanoimprint lithography process using disposable biomass template having gas permeability was investigated. It was found that a disposable biomass template derived from cellulose materials shows an excellent gas permeability and decreases transcriptional defects in conventional templates such as quartz, PMDS, DLC that have no gas permeability. We believe that outgasses from imprinted materials are easily removed through the template. The approach to use a cellulose for template material is suitable as the next generation of clean separation technology. It is expected to be one of the defect-less thermal nanoimprint lithographic technologies. It is also expected that volatile materials and solvent including materials become available that often create defects and peelings in conventional temples that have no gas permeability.

  2. Novel electrostatic column for ion projection lithography

    SciTech Connect

    Chalupka, A.; Stengl, G.; Buschbeck, H.; Lammer, G.; Vonach, H.; Fischer, R.; Hammel, E.; Loeschner, H.; Nowak, R.; Wolf, P. ); Finkelstein, W.; Hill, R.W. ); Berry, I.L. ); Harriott, L.R. ); Melngailis, J. ); Randall, J.N. ); Wolfe, J.C. ); Stroh, H.; Wollnik, H. ); Mondelli, A.A.; Petillo, J.J. ); Leung, K. (Lawrence Berkeley Laboratory, University of Californi

    1994-11-01

    Ion projection lithography (IPL) is being considered for high volume sub-0.25-[mu]m lithography. A novel ion-optical column has been designed for exposing 20[times]20 mm[sup 2] fields at 3[times] reduction from stencil mask to wafer substrates. A diverging lens is realized by using the stencil mask as the first electrode of the ion-optical column. The second and third electrode form an accelerating field lens. The aberrations of the first two lenses (diverging lens and field lens) are compensated by an asymmetric Einzel lens projecting an ion image of the stencil mask openings onto the wafer substrate with better than 2 mrad telecentricity. Less than 30 nm intrafield distortion was calculated within 20[times]20 mm[sup 2] exposure fields. The calculation uncertainty is estimated to be about 10 nm. The calculation holds for helium ions with [approx]10 keV ion energy at the stencil mask and 150 keV ion energy at the wafer plane. A virtual ion source size of 10 [mu]m has been assumed. The calculated chromatic aberrations are less than 60 nm, assuming 6 eV energy spread of the ions extracted from a duoplasmatron source. Recently a multicusp ion source has been developed for which preliminary results indicate an energy spread of less than 2 eV. Thus, with a multicusp source chromatic aberrations of less than 20 nm are to be expected. The ion energy at the crossover between the field lens and the asymmetric Einzel lens is 200 keV. Therefore, stochastic space charge induced degradations in resolution can be kept sufficiently low. The divergence of the ion image projected to the wafer plane is less than 2 mrad. Thus, the usable'' depth of focus for the novel ion optics is in the order of 10 [mu]m.

  3. Integrating nanosphere lithography in device fabrication

    NASA Astrophysics Data System (ADS)

    Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

    2016-03-01

    This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

  4. Benchtop micromolding of polystyrene by soft lithography.

    PubMed

    Wang, Yuli; Balowski, Joseph; Phillips, Colleen; Phillips, Ryan; Sims, Christopher E; Allbritton, Nancy L

    2011-09-21

    Polystyrene (PS), a standard material for cell culture consumable labware, was molded into microstructures with high fidelity of replication by an elastomeric polydimethylsiloxane (PDMS) mold. The process was a simple, benchtop method based on soft lithography using readily available materials. The key to successful replica molding by this simple procedure relies on the use of a solvent, for example, gamma-butyrolactone, which dissolves PS without swelling the PDMS mold. PS solution was added to the PDMS mold, and evaporation of the solvent was accomplished by baking the mold on a hotplate. Microstructures with feature sizes as small as 3 μm and aspect ratios as large as 7 were readily molded. Prototypes of microfluidic chips made from PS were prepared by thermal bonding of a microchannel molded in PS with a flat PS substrate. The PS microfluidic chip displayed much lower adsorption and absorption of hydrophobic molecules (e.g. rhodamine B) compared to a comparable chip created from PDMS. The molded PS surface exhibited stable surface properties after plasma oxidation as assessed by contact angle measurement. The molded, oxidized PS surface remained an excellent surface for cell culture based on cell adhesion and proliferation. To demonstrate the application of this process for cell biology research, PS was micromolded into two different microarray formats, microwells and microposts, for segregation and tracking of non-adherent and adherent cells, respectively. The micromolded PS possessed properties that were ideal for biological and bioanalytical needs, thus making it an alternative material to PDMS and suitable for building lab-on-a-chip devices by soft lithography methods.

  5. Learning Relative Motion Concepts in Immersive and Non-Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Kozhevnikov, Michael; Gurlitt, Johannes; Kozhevnikov, Maria

    2013-01-01

    The focus of the current study is to understand which unique features of an immersive virtual reality environment have the potential to improve learning relative motion concepts. Thirty-seven undergraduate students learned relative motion concepts using computer simulation either in immersive virtual environment (IVE) or non-immersive desktop…

  6. EUV mask process specifics and development challenges

    NASA Astrophysics Data System (ADS)

    Nesladek, Pavel

    2014-07-01

    EUV lithography is currently the favorite and most promising candidate among the next generation lithography (NGL) technologies. Decade ago the NGL was supposed to be used for 45 nm technology node. Due to introduction of immersion 193nm lithography, double/triple patterning and further techniques, the 193 nm lithography capabilities was greatly improved, so it is expected to be used successfully depending on business decision of the end user down to 10 nm logic. Subsequent technology node will require EUV or DSA alternative technology. Manufacturing and especially process development for EUV technology requires significant number of unique processes, in several cases performed at dedicated tools. Currently several of these tools as e.g. EUV AIMS or actinic reflectometer are not available on site yet. The process development is done using external services /tools with impact on the single unit process development timeline and the uncertainty of the process performance estimation, therefore compromises in process development, caused by assumption about similarities between optical and EUV mask made in experiment planning and omitting of tests are further reasons for challenges to unit process development. Increased defect risk and uncertainty in process qualification are just two examples, which can impact mask quality / process development. The aim of this paper is to identify critical aspects of the EUV mask manufacturing with respect to defects on the mask with focus on mask cleaning and defect repair and discuss the impact of the EUV specific requirements on the experiments needed.

  7. Game engines and immersive displays

    NASA Astrophysics Data System (ADS)

    Chang, Benjamin; Destefano, Marc

    2014-02-01

    While virtual reality and digital games share many core technologies, the programming environments, toolkits, and workflows for developing games and VR environments are often distinct. VR toolkits designed for applications in visualization and simulation often have a different feature set or design philosophy than game engines, while popular game engines often lack support for VR hardware. Extending a game engine to support systems such as the CAVE gives developers a unified development environment and the ability to easily port projects, but involves challenges beyond just adding stereo 3D visuals. In this paper we outline the issues involved in adapting a game engine for use with an immersive display system including stereoscopy, tracking, and clustering, and present example implementation details using Unity3D. We discuss application development and workflow approaches including camera management, rendering synchronization, GUI design, and issues specific to Unity3D, and present examples of projects created for a multi-wall, clustered, stereoscopic display.

  8. Immersive video for virtual tourism

    NASA Astrophysics Data System (ADS)

    Hernandez, Luis A.; Taibo, Javier; Seoane, Antonio J.

    2001-11-01

    This paper describes a new panoramic, 360 degree(s) video system and its use in a real application for virtual tourism. The development of this system has required to design new hardware for multi-camera recording, and software for video processing in order to elaborate the panorama frames and to playback the resulting high resolution video footage on a regular PC. The system makes use of new VR display hardware, such as WindowVR, in order to make the view dependent on the viewer's spatial orientation and so enhance immersiveness. There are very few examples of similar technologies and the existing ones are extremely expensive and/or impossible to be implemented on personal computers with acceptable quality. The idea of the system starts from the concept of Panorama picture, developed in technologies such as QuickTimeVR. This idea is extended to the concept of panorama frame that leads to panorama video. However, many problems are to be solved to implement this simple scheme. Data acquisition involves simultaneously footage recording in every direction, and latter processing to convert every set of frames in a single high resolution panorama frame. Since there is no common hardware capable of 4096x512 video playback at 25 fps rate, it must be stripped in smaller pieces which the system must manage to get the right frames of the right parts as the user movement demands it. As the system must be immersive, the physical interface to watch the 360 degree(s) video is a WindowVR, that is, a flat screen with an orientation tracker that the user holds in his hands, moving it like if it were a virtual window through which the city and its activity is being shown.

  9. Initiation of immersed granular avalanches.

    PubMed

    Mutabaruka, Patrick; Delenne, Jean-Yves; Soga, Kenichi; Radjai, Farhang

    2014-05-01

    By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃ 0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the

  10. Research on evaluation techniques for immersive multimedia

    NASA Astrophysics Data System (ADS)

    Hashim, Aslinda M.; Romli, Fakaruddin Fahmi; Zainal Osman, Zosipha

    2013-03-01

    Nowadays Immersive Multimedia covers most usage in tremendous ways, such as healthcare/surgery, military, architecture, art, entertainment, education, business, media, sport, rehabilitation/treatment and training areas. Moreover, the significant of Immersive Multimedia to directly meet the end-users, clients and customers needs for a diversity of feature and purpose is the assembly of multiple elements that drive effective Immersive Multimedia system design, so evaluation techniques is crucial for Immersive Multimedia environments. A brief general idea of virtual environment (VE) context and `realism' concept that formulate the Immersive Multimedia environments is then provided. This is followed by a concise summary of the elements of VE assessment technique that is applied in Immersive Multimedia system design, which outlines the classification space for Immersive Multimedia environments evaluation techniques and gives an overview of the types of results reported. A particular focus is placed on the implications of the Immersive Multimedia environments evaluation techniques in relation to the elements of VE assessment technique, which is the primary purpose of producing this research. The paper will then conclude with an extensive overview of the recommendations emanating from the research.

  11. Wedge immersed thermistor bolometer measures infrared radiation

    NASA Technical Reports Server (NTRS)

    Dreyfus, M. G.

    1965-01-01

    Wedge immersed-thermistor bolometer measures infrared radiation in the atmosphere. The thermistor flakes are immersed by optical contact on a wedge-shaped germanium lens whose narrow dimension is clamped between two complementary wedge-shaped germanium blocks bonded with a suitable adhesive.

  12. Immersion Education in China: Teachers' Perspectives

    ERIC Educational Resources Information Center

    Kong, Stella; Hoare, Philip; Chi, Yanping

    2011-01-01

    This paper investigates the views of immersion teachers in Hong Kong and Xi'an towards the immersion curriculum they are teaching. Teachers are important stakeholders in any curriculum implementation and their views are significant in both evaluating progress and determining future directions. The teachers' views were gathered from questionnaires…

  13. Immersive 3D Geovisualization in Higher Education

    ERIC Educational Resources Information Center

    Philips, Andrea; Walz, Ariane; Bergner, Andreas; Graeff, Thomas; Heistermann, Maik; Kienzler, Sarah; Korup, Oliver; Lipp, Torsten; Schwanghart, Wolfgang; Zeilinger, Gerold

    2015-01-01

    In this study, we investigate how immersive 3D geovisualization can be used in higher education. Based on MacEachren and Kraak's geovisualization cube, we examine the usage of immersive 3D geovisualization and its usefulness in a research-based learning module on flood risk, called GEOSimulator. Results of a survey among participating students…

  14. Immersive virtual reality simulations in nursing education.

    PubMed

    Kilmon, Carol A; Brown, Leonard; Ghosh, Sumit; Mikitiuk, Artur

    2010-01-01

    This article explores immersive virtual reality as a potential educational strategy for nursing education and describes an immersive learning experience now being developed for nurses. This pioneering project is a virtual reality application targeting speed and accuracy of nurse response in emergency situations requiring cardiopulmonary resuscitation. Other potential uses and implications for the development of virtual reality learning programs are discussed. PMID:21086871

  15. Libraries of La Pocatiere: French Immersion Programs

    ERIC Educational Resources Information Center

    Kuntz, Patricia, S.

    2005-01-01

    Many times summer language immersion administrators and instructors overlook the rich collections housed in various town libraries. Students of French immersion programs have an opportunity to utilize local libraries. This essay describes the facilities and services of five libraries in La Pocatiere, Quebec. A series of interviews of librarians…

  16. Bringing Chinese Immersion to Western Massachusetts

    ERIC Educational Resources Information Center

    Wang, Kathleen

    2009-01-01

    This article describes the Pioneer Valley Chinese Immersion Charter School (PVCICS), a regional public charter school in western Massachusetts, which opened in 2007 and the only Chinese immersion school in New England. The school draws students from over twenty-five towns and cities in a predominantly rural area of Massachusetts that includes the…

  17. Compact imaging spectrometer utilizing immersed gratings

    DOEpatents

    Lerner, Scott A.

    2005-12-20

    A compact imaging spectrometer comprising an entrance slit for directing light, lens means for receiving the light, refracting the light, and focusing the light; an immersed diffraction grating that receives the light from the lens means and defracts the light, the immersed diffraction grating directing the detracted light back to the lens means; and a detector that receives the light from the lens means.

  18. Social Interaction Development through Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Beach, Jason; Wendt, Jeremy

    2014-01-01

    The purpose of this pilot study was to determine if participants could improve their social interaction skills by participating in a virtual immersive environment. The participants used a developing virtual reality head-mounted display to engage themselves in a fully-immersive environment. While in the environment, participants had an opportunity…

  19. Impacts of cost functions on inverse lithography patterning.

    PubMed

    Yu, Jue-Chin; Yu, Peichen

    2010-10-25

    For advanced CMOS processes, inverse lithography promises better patterning fidelity than conventional mask correction techniques due to a more complete exploration of the solution space. However, the success of inverse lithography relies highly on customized cost functions whose design and know-how have rarely been discussed. In this paper, we investigate the impacts of various objective functions and their superposition for inverse lithography patterning using a generic gradient descent approach. We investigate the most commonly used objective functions, which are the resist and aerial images, and also present a derivation for the aerial image contrast. We then discuss the resulting pattern fidelity and final mask characteristics for simple layouts with a single isolated contact and two nested contacts. We show that a cost function composed of a dominant resist-image component and a minor aerial-image or image-contrast component can achieve a good mask correction and contour targets when using inverse lithography patterning.

  20. Direct-write scanning probe lithography: towards a desktop fab

    NASA Astrophysics Data System (ADS)

    Giam, Louise R.; Senesi, Andrew J.; Liao, Xing; Wong, Lu Shin; Chai, Jinan; Eichelsdoerfer, Daniel J.; Shim, Wooyoung; Rasin, Boris; He, Shu; Mirkin, Chad A.

    2011-06-01

    Massively parallel scanning-probe based methods have been used to address the challenges of nanometer to millimeter scale printing for a variety of materials and mark a step towards the realization of a "desktop fab." Such tools enable simple, flexible, high-throughput, and low-cost nano- and microscale patterning, which allow researchers to rapidly synthesize and study systems ranging from nanoparticle synthesis to biological processes. We have developed a novel scanning probe-based cantilever-free printing method termed polymer pen lithography (PPL), which uses an array of elastomeric tips to transfer materials (e.g. alkanethiols, proteins, polymers) in a direct-write manner onto a variety of surfaces. This technique takes the best attributes of dip-pen nanolithography (DPN) and eliminates many of the disadvantages of contact printing. Various related techniques such as beam pen lithography (BPL), scanning probe block copolymer lithography (SPBCL), and hard-tip, soft spring lithography (HSL) are also discussed.

  1. Depth of immersion as a determinant of the natriuresis of water immersion

    NASA Technical Reports Server (NTRS)

    Epstein, M.; Miller, M.; Schneider, N.

    1974-01-01

    The current study was undertaken to further assess the contribution of an immersion-induced hydrostatic pressure gradient on the redistribution of blood volume. The rate of sodium excretion by seated subjects was significantly increased by water immersion up to the chest and neck compared to waist immersion and controls. These results are consistent with the hypothesis that whereas immersion to the level of the diaphragm merely cancels the intravascular hydrostatic pressure gradient by providing an identical external gradient, immersion above the diaphragm level results in increased water pressure which tends to favor a shift in blood volume from the lower extremities.

  2. Compact imaging spectrometer utilizing immersed gratings

    DOEpatents

    Chrisp, Michael P.; Lerner, Scott A.; Kuzmenko, Paul J.; Bennett, Charles L.

    2007-07-03

    A compact imaging spectrometer with an immersive diffraction grating that compensates optical distortions. The imaging spectrometer comprises an entrance slit for transmitting light, means for receiving the light and directing the light, an immersion grating, and a detector array. The entrance slit, the means for receiving the light, the immersion grating, and the detector array are positioned wherein the entrance slit transmits light to the means for receiving the light and the means for receiving the light directs the light to the immersion grating and the immersion grating receives the light and directs the light to the means for receiving the light, and the means for receiving the light directs the light to the detector array.

  3. Investigation of local registration performance of IMS Nanofabrication's Multi-Beam Mask Writer

    NASA Astrophysics Data System (ADS)

    Chalom, Daniel; Klikovits, Jan; Geist, David; Hudek, Peter; Eder-Kapl, Stefan; Daneshpanah, Mehdi; Laske, Frank; Eyring, Stefan; Roeth, Klaus-Dieter

    2015-07-01

    Reticles for manufacturing upcoming 10nm and 7nm Logic devices will become very complex, no matter whether 193nm water immersion lithography will continue as main stream production path or EUV lithography will be able to take over volume production of critical layers for the 7nm node. The economic manufacturing of future masks for 193i, EUV and imprint lithography with further increasing complexity drives the need for multi-beam mask writing as this technology can overcome the influence of complexity on write time of today's common variable shape beam writers. Local registration of the multi-beam array is a critical component which greatly differs from variable shape beam systems. In this paper we would like to present the local registration performance of the IMS Multi-Beam Mask Writer system and the metrology tools that enable the characterization optimization.

  4. Evolution in the concentration of activities in lithography

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    2016-03-01

    From a perusal of the proceedings of the SPIE Advanced Lithography Symposium, the progression of new concepts in lithographic technology can be seen. A new idea first appears in a few papers, and over time, there is an increase in the number of papers on the same topic. Eventually the method becomes commonplace, and the number of papers on the topic declines, as the idea becomes part of our industry's working knowledge. For example, one or two papers on resolution enhancement techniques (RETs) appeared in the proceedings of the Optical Microlithography Conference in 1989 and 1990. By 1994, the total number of papers had increased to 35. Early lithographers focused on practical issues, such as adhesion promotion and resist edge bead. The introduction of simulation software brought on the next era of lithography. This was followed by a period of time in which RETs were developed and brought to maturity. The introduction of optical proximity corrections (OPC) initiated the next major era of lithography. The traditional path for scaling by using shorter wavelengths, decreasing k1 and increasing numerical aperture has given way to the current era of optical multiple patterning and lithography-design co-optimization. There has been sufficient activity in EUV lithography R and D to justify a separate EUV Lithography Conference as part of the annual Advanced Lithography Symposium. Each era builds on the cumulative knowledge gained previously. Over time, there have been parallel developments in optics, exposure tools, resist, metrology and mask technology, many of which were associated with changes in the wavelength of light used for leading-edge lithography.

  5. A survey of advanced excimer optical imaging and lithography

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koichi; Suwa, Kyoichi

    1998-11-01

    The first item discussed in this paper is to estimate the future trend regarding minimum geometry and the optical parameters, such as NA and wavelength. Simulations based on aerial images are performed for the estimation. The resolution limit is defined as a minimum feature size which retains practical depth of focus (DOF). Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser (λ=248 nm), ArF excimer laser (λ=193 nm) and F2 excimer laser (λ=157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength. The second item is to survey ArF optics. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source. Discussions are ranging over some critical issues. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown.

  6. Successful demonstration of a comprehensive lithography defect monitoring strategy

    NASA Astrophysics Data System (ADS)

    Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

    2003-07-01

    This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the

  7. Directed self-assembly process integration: Fin patterning approaches and challenges

    NASA Astrophysics Data System (ADS)

    Sayan, Safak; Chan, B. T.; Gronheid, Roel; Van Roey, Frieda; Kim, Min-Soo; Williamson, Lance; Nealey, Paul

    2014-03-01

    Resolution requirements for photolithography have reached beyond the wavelength of light. Consequently, it is becoming increasingly complicated and expensive to further minimize feature dimensions as required to push the limits of Moore's law. EUV lithography has been the much anticipated solution; however, its insertion timing for High Volume Manufacturing is still an uncertainty due to source power and EUV mask infrastructure limitations. Extending the limits of 193nm immersion lithography requires pitch division using either Double Patterning Pitch Division (DPPD), and/or Spacer Based Pitch Division (SBPD) schemes (e.g. Hard mask image transfer methods (Double, Triple, Quadruple)). While these approaches reduce pitch, there is an associated risk/compromise of process complexity, and overlay accuracy budget issues. Directed Self Assembly (DSA) processes offer the promise of providing alternative ways to extend optical lithography cost-effectively for sub-10nm nodes and present itself as an alternative pitch division approach. As a result, DSA has gained increased momentum in recent years, as a means for extending optical lithography past its current limits. The availability of a DSA processing line can enable to further push the limits of 193nm immersion lithography and overcome some of the critical concerns for EUV lithography. Robust etch transfer of DSA patterns into commonly used device integration materials such as silicon, silicon nitride, and silicon dioxide had been previously demonstrated [1,2]. However DSA integration to CMOS process flows, including cut/keep structures to form fin arrays, is yet to be demonstrated on relevant film stacks (front-end-of-line device integration such as hard mask stacks, and STI stacks). Such a demonstration will confirm and reinforce its viability as a candidate for sub-10nm technology nodes.

  8. Photogrammetric Applications of Immersive Video Cameras

    NASA Astrophysics Data System (ADS)

    Kwiatek, K.; Tokarczyk, R.

    2014-05-01

    The paper investigates immersive videography and its application in close-range photogrammetry. Immersive video involves the capture of a live-action scene that presents a 360° field of view. It is recorded simultaneously by multiple cameras or microlenses, where the principal point of each camera is offset from the rotating axis of the device. This issue causes problems when stitching together individual frames of video separated from particular cameras, however there are ways to overcome it and applying immersive cameras in photogrammetry provides a new potential. The paper presents two applications of immersive video in photogrammetry. At first, the creation of a low-cost mobile mapping system based on Ladybug®3 and GPS device is discussed. The amount of panoramas is much too high for photogrammetric purposes as the base line between spherical panoramas is around 1 metre. More than 92 000 panoramas were recorded in one Polish region of Czarny Dunajec and the measurements from panoramas enable the user to measure the area of outdoors (adverting structures) and billboards. A new law is being created in order to limit the number of illegal advertising structures in the Polish landscape and immersive video recorded in a short period of time is a candidate for economical and flexible measurements off-site. The second approach is a generation of 3d video-based reconstructions of heritage sites based on immersive video (structure from immersive video). A mobile camera mounted on a tripod dolly was used to record the interior scene and immersive video, separated into thousands of still panoramas, was converted from video into 3d objects using Agisoft Photoscan Professional. The findings from these experiments demonstrated that immersive photogrammetry seems to be a flexible and prompt method of 3d modelling and provides promising features for mobile mapping systems.

  9. Nanoparticle fabrication by geometrically confined nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Denomme, Ryan C.; Iyer, Krishna; Kreder, Michael; Smith, Brendan; Nieva, Patricia M.

    2013-07-01

    Arrays of metal nanoparticles, typically gold or silver, exhibit localized surface plasmon resonance, a phenomenon that has many applications, such as chemical and biological sensing. However, fabrication of metal nanoparticle arrays with high uniformity and repeatability, at a reasonable cost, is difficult. Nanosphere lithography (NSL) has been used before to produce inexpensive nanoparticle arrays through the use of monolayers of self-assembled microspheres as a deposition mask. However, control over the size and location of the arrays, as well as uniformity over large areas is poor, thus limiting its use to research purposes. In this paper, a new NSL method, called here geometrically confined NSL (GCNSL), is presented. In GCNSL, microsphere assembly is confined to geometric patterns defined in photoresist, allowing high-precision and large-scale nanoparticle patterning while still remaining low cost. Using this new method, it is demonstrated that 400 nm polystyrene microspheres can be assembled inside of large arrays of photoresist patterns. Results show that optimal microsphere assembly is achieved with long and narrow rectangular photoresist patterns. The combination of microsphere monolayers and photoresist patterns is then used as a deposition mask to produce silver nanoparticles at precise locations on the substrate with high uniformity, repeatability, and quality.

  10. Image-projection ion-beam lithography

    SciTech Connect

    Miller, P.A.

    1989-01-01

    Image-projection ion-beam lithography promises high-throughput patterning with wide process latitude, excellent resolution, and minimal damage to underlying circuit layers. The process involves extracting helium ions from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto the wafer. A key feature is the use of image demagnification which simplifies reticle fabrication and inspection, and leads to low power loading on the reticle and long reticle life. In this paper we report computational studies aimed at improving field size, linearity, and telecentricity over that demonstrated experimentally in the pioneering work by Ion Microfabrication Systems, GmbH (Vienna) during the past decade. We study a mechanically simple arrangement of equal-radii coaxial tubular lenses. We employ ion column optimization by simulated annealing and uncover a new optimization strategy which may be applicable in other optimization work. The resulting column design is much improved over our initial attempts based on an iterative optimization procedure. However, we still are unable to eliminate image distortion, and we would need either to rely on reticle predistortion or on use of a more complex electrode system for a production application. 15 refs., 5 figs.

  11. X-ray lithography using holographic images

    DOEpatents

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  12. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  13. Characterization of 'metal resist' for EUV lithography

    NASA Astrophysics Data System (ADS)

    Toriumi, Minoru; Sato, Yuta; Kumai, Reiji; Yamashita, Yoshiyuki; Tsukiyama, Koichi; Itani, Toshiro

    2016-03-01

    We characterized EIDEC metal resist for EUV lithography by various measurement methods. The low-voltage aberration-corrected scanning transmission electron microscopy combined with electron energy-loss spectroscopy showed the morphology of metal resists in nanometer regions and enabled studying the distribution of resist component in the resist film. The zirconium oxide metal resist kept the core-shell structure in the resist films and the titanium oxide metal resist showed the aggregation in the film. X-ray diffractometry and ab initio molecular dynamics simulation showed the amorphous structure with short-range order of the zirconium oxide metal resist. X-ray Photoelectron spectroscopy of the zirconium oxide-methacrylic acid metal resist showed the decomposition of the shell molecules and the increase of electron density at zirconium atoms after the EUV exposure. Infrared (IR) spectra indicated that the shell molecules made the various bindings to the metal core and the specific vibrational mode of shell molecules showed the divergent responsivity to the irradiation wavenumber of the IR Free electron laser.

  14. Smartphone sensors for stone lithography authentication.

    PubMed

    Spagnolo, Giuseppe Schirripa; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to "authenticate" non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the "not original artwork" is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  15. Resist profile simulation with fast lithography model

    NASA Astrophysics Data System (ADS)

    He, Yan-Ying; Chou, Chih-Shiang; Tang, Yu-Po; Huang, Wen-Chun; Liu, Ru-Gun; Gau, Tsai-Sheng

    2014-03-01

    A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for OPC modeling. As the technology moves forward, this traditional approach has become insufficient in regard to lithography weak point detection, etching bias prediction, etc. The drawback of this approach is from metrology and simulation. First, top-down SEM is only good for acquiring planar CD information. Some 3D metrology such as cross-section SEM or AFM is necessary to obtain the true resist profile. Second, the TCC modeling approach is only suitable for planar image simulation. In order to model the resist profile, full 3D image simulation is needed. Even though there are many rigorous simulators capable of catching the resist profile very well, none of them is feasible for full-chip application due to the tremendous consumption of computational resource. The authors have proposed a quasi-3D image simulation method in the previous study [1], which is suitable for full-chip simulation with the consideration of sidewall angles, to improve the model accuracy of planar models. In this paper, the quasi-3D image simulation is extended to directly model the resist profile with AFM and/or cross-section SEM data. Resist weak points detected by the model generated with this 3D approach are verified on the wafer.

  16. Metal hierarchical patterning by direct nanoimprint lithography

    PubMed Central

    Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

    2013-01-01

    Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

  17. Smartphone Sensors for Stone Lithography Authentication

    PubMed Central

    Schirripa Spagnolo, Giuseppe; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to “authenticate” non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the “not original artwork” is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  18. Immersion diuresis without expected suppression of vasopressin

    NASA Technical Reports Server (NTRS)

    Keil, L. C.; Silver, J. E.; Wong, N.; Spaul, W. A.; Greenleaf, J. E.; Kravik, S. E.

    1984-01-01

    There is a shift of blood from the lower parts of the body to the thoracic circulation during bed rest, water immersion, and presumably during weightlessness. On earth, this central fluid shift is associated with a profound diuresis. However, the mechanism involved is not yet well understood. The present investigation is concerned with measurements regarding the plasma vasopressin, fluid, electrolyte, and plasma renin activity (PRA) responses in subjects with normal preimmersion plasma vasopressin (PVP) concentration. In the conducted experiments, PRA was suppressed significantly at 30 min of immersion and had declined by 74 percent by the end of the experiment. On the basis of previously obtained results, it appears that sodium excretion during immersion may be independent of aldosterone action. Experimental results indicate that PVP is not suppressed by water immersion in normally hydrated subjects and that other factors may be responsible for the diuresis.

  19. Immersion in Movement-Based Interaction

    NASA Astrophysics Data System (ADS)

    Pasch, Marco; Bianchi-Berthouze, Nadia; van Dijk, Betsy; Nijholt, Anton

    The phenomenon of immersing oneself into virtual environments has been established widely. Yet to date (to our best knowledge) the physical dimension has been neglected in studies investigating immersion in Human-Computer Interaction (HCI). In movement-based interaction the user controls the interface via body movements, e.g. direct manipulation of screen objects via gestures or using a handheld controller as a virtual tennis racket. It has been shown that physical activity affects arousal and that movement-based controllers can facilitate engagement in the context of video games. This paper aims at identifying movement features that influence immersion. We first give a brief survey on immersion and movement-based interfaces. Then, we report results from an interview study that investigates how users experience their body movements when interacting with movement-based interfaces. Based on the interviews, we identify four movement-specific features. We recommend them as candidates for further investigation.

  20. Intelligent control system based on ARM for lithography tool

    NASA Astrophysics Data System (ADS)

    Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

    2014-08-01

    The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

  1. Conformal Visualization for Partially-Immersive Platforms

    PubMed Central

    Petkov, Kaloian; Papadopoulos, Charilaos; Zhang, Min; Kaufman, Arie E.; Gu, Xianfeng

    2010-01-01

    Current immersive VR systems such as the CAVE provide an effective platform for the immersive exploration of large 3D data. A major limitation is that in most cases at least one display surface is missing due to space, access or cost constraints. This partially-immersive visualization results in a substantial loss of visual information that may be acceptable for some applications, however it becomes a major obstacle for critical tasks, such as the analysis of medical data. We propose a conformal deformation rendering pipeline for the visualization of datasets on partially-immersive platforms. The angle-preserving conformal mapping approach is used to map the 360°3D view volume to arbitrary display configurations. It has the desirable property of preserving shapes under distortion, which is important for identifying features, especially in medical data. The conformal mapping is used for rasterization, realtime raytracing and volume rendering of the datasets. Since the technique is applied during the rendering, we can construct stereoscopic images from the data, which is usually not true for image-based distortion approaches. We demonstrate the stereo conformal mapping rendering pipeline in the partially-immersive 5-wall Immersive Cabin (IC) for virtual colonoscopy and architectural review. PMID:26279083

  2. Human adaptation to repeated cold immersions.

    PubMed Central

    Golden, F S; Tipton, M J

    1988-01-01

    1. The present investigation was designed to examine human adaptation to intermittent severe cold exposure and to assess the effect of exercise on any adaptation obtained. 2. Sixteen subjects were divided into two equal groups. Each subject performed ten head-out immersions; two into thermoneutral water which was then cooled until they shivered vigorously, and eight into water at 15 degrees C for 40 min. During the majority of the 15 degrees C immersions, one group (dynamic group) exercised whilst the other (static group) rested. 3. Results showed that both groups responded to repeated cold immersions with a reduction in their initial responses to cold. The time course of these reductions varied, however, between responses. 4. Only the static group developed a reduced metabolic response to prolonged resting immersion. 5. It is concluded that repeated resting exposure to cold was the more effective way of producing an adaptation. The performance of exercise during repeated exposure to cold prevented the development of an adaptive reduction in the metabolic response to cold during a subsequent resting immersion. In addition, many of the adaptations obtained during repeated resting exposure were overridden or masked during a subsequent exercising immersion. PMID:3411500

  3. Extreme Ultraviolet Lithography - Reflective Mask Technology

    SciTech Connect

    Walton, C.C.; Kearney, P.A.; Mirkarimi, P.B.; Bowers, J.M.; Cerjan, C.; Warrick, A.L.; Wilhelmsen, K.; Fought, E.; Moore, C.; Larson, C.; Baker, S.; Burkhart, S.C.; Hector, S.D.

    2000-05-09

    EUVL mask blanks consist of a distributed Bragg reflector made of 6.7nm-pitch bi-layers of MO and Si deposited upon a precision Si or glass substrate. The layer deposition process has been optimized for low defects, by application of a vendor-supplied but highly modified ion-beam sputter deposition system. This system is fully automated using SMIF technology to obtain the lowest possible environmental- and handling-added defect levels. Originally designed to coat 150mm substrates, it was upgraded in July, 1999 to 200 mm and has coated runs of over 50 substrates at a time with median added defects >100nm below 0.05/cm{sup 2}. These improvements have resulted from a number of ion-beam sputter deposition system modifications, upgrades, and operational changes, which will be discussed. Success in defect reduction is highly dependent upon defect detection, characterization, and cross-platform positional registration. We have made significant progress in adapting and extending commercial tools to this purpose, and have identified the surface scanner detection limits for different defect classes, and the signatures of false counts and non-printable scattering anomalies on the mask blank. We will present key results and how they have helped reduce added defects. The physics of defect reduction and mitigation is being investigated by a program on multilayer growth over deliberately placed perturbations (defects) of varying size. This program includes modeling of multilayer growth and modeling of defect printability. We developed a technique for depositing uniformly sized gold spheres on EUVL substrates, and have studied the suppression of the perturbations during multilayer growth under varying conditions. This work is key to determining the lower limit of critical defect size for EUV Lithography. We present key aspects of this work. We will summarize progress in all aspects of EUVL mask blank development, and present detailed results on defect reduction and mask blank

  4. Antireflective surface patterned by rolling mask lithography

    NASA Astrophysics Data System (ADS)

    Seitz, Oliver; Geddes, Joseph B.; Aryal, Mukti; Perez, Joseph; Wassei, Jonathan; McMackin, Ian; Kobrin, Boris

    2014-03-01

    A growing number of commercial products such as displays, solar panels, light emitting diodes (LEDs and OLEDs), automotive and architectural glass are driving demand for glass with high performance surfaces that offer anti-reflective, self-cleaning, and other advanced functions. State-of-the-art coatings do not meet the desired performance characteristics or cannot be applied over large areas in a cost-effective manner. "Rolling Mask Lithography" (RML™) enables highresolution lithographic nano-patterning over large-areas at low-cost and high-throughput. RML is a photolithographic process performed using ultraviolet (UV) illumination transmitted through a soft cylindrical mask as it rolls across a substrate. Subsequent transfer of photoresist patterns into the substrate is achieved using an etching process, which creates a nanostructured surface. The current generation exposure tool is capable of patterning one-meter long substrates with a width of 300 mm. High-throughput and low-cost are achieved using continuous exposure of the resist by the cylindrical photomask. Here, we report on significant improvements in the application of RML™ to fabricate anti-reflective surfaces. Briefly, an optical surface can be made antireflective by "texturing" it with a nano-scale pattern to reduce the discontinuity in the index of refraction between the air and the bulk optical material. An array of cones, similar to the structure of a moth's eye, performs this way. Substrates are patterned using RML™ and etched to produce an array of cones with an aspect ratio of 3:1, which decreases the reflectivity below 0.1%.

  5. Shadowing effect modeling and compensation for EUV lithography

    NASA Astrophysics Data System (ADS)

    Song, Hua; Zavyalova, Lena; Su, Irene; Shiely, James; Schmoeller, Thomas

    2011-04-01

    Extreme ultraviolet (EUV) lithography is one of the leading technologies for 16nm and smaller node device patterning. One patterning issue intrinsic to EUV lithography is the shadowing effect due to oblique illumination at the mask and mask absorber thickness. This effect can cause CD errors up to a few nanometers, consequently needs to be accounted for in OPC modeling and compensated accordingly in mask synthesis. Because of the dependence on the reticle field coordinates, shadowing effect is very different from the traditional optical and resist effects. It poses challenges to modeling, compensation, and verification that were not encountered in tradition optical lithography mask synthesis. In this paper, we present a systematic approach for shadowing effect modeling and model-based shadowing compensation. Edge based shadowing effect calculation with reticle and scan information is presented. Model calibration and mask synthesis flows are described. Numerical experiments are performed to demonstrate the effectiveness of the approach.

  6. Deconstructing contact hole CD printing variability in EUV lithography

    NASA Astrophysics Data System (ADS)

    Civay, D.; Wallow, T.; Doganaksoy, N.; Verduijn, E.; Schmid, G.; Mangat, P.

    2014-04-01

    Lithographic CD printing variability can be easily captured with a CDU measurement, however delineating the most significant sources causing the variability is challenging. In EUV lithography, the resist, reticle, metrology methodology, and stochastics are examples of factors that influence printing variability. Determining the most significant sources of variability in contact hole and via patterning is particularly interesting because the variability can be measured as a function of two tethered dimensions. Contact hole (CH) variability has a direct impact on device performance while via variability affects metal area scaling and design. By studying sources of variability opportunities for improving device performance and scaling can be identified. In this paper, we will examine sources of contact patterning variability in EUV lithography comprehensively using various EUV exposure tools as well as simulation methods. We will present a benchmark of current state of the art materials and patterning methods with the goal of assessing contact hole printability at the limit of 0.33 NA EUV lithography.

  7. Recent progress in nanoparticle photoresists development for EUV lithography

    NASA Astrophysics Data System (ADS)

    Kasahara, Kazuki; Kosma, Vasiliki; Odent, Jeremy; Xu, Hong; Yu, Mufei; Giannelis, Emmanuel P.; Ober, Christopher K.

    2016-03-01

    Extreme ultraviolet (EUV) lithography is a promising candidate for next generation lithography. For high volume manufacturing of semiconductor devices, significant improvement of resolution and sensitivity is required for successful implementation of EUV resists. Performance requirements for such resists demand the development of entirely new resist platforms. Cornell University has intensely studied metal oxide nanoparticle photoresists with high sensitivity for EUV lithography applications. Zirconium oxide nanoparticles with PAG enabling sub 30nm line negative tone patterns at an EUV dose below 5 mJ/cm2 show one of the best EUV sensitivity results ever reported. In this paper, recent progress in metal oxide nanoparticle photoresist research will be discussed. Several studies regarding composition investigation and new metal element study are reported.

  8. Thickness optimization for lithography process on silicon substrate

    NASA Astrophysics Data System (ADS)

    Su, Xiaojing; Su, Yajuan; Liu, Yansong; Chen, Fong; Liu, Zhimin; Zhang, Wei; Li, Bifeng; Gao, Tao; Wei, Yayi

    2015-03-01

    With the development of the lithography, the demand for critical dimension (CD) and CD uniformity (CDU) has reached a new level, which is harder and harder to achieve. There exists reflection at the interface between photo-resist and substrate during lithography exposure. This reflection has negative impact on CD and CDU control. It is possible to optimize the litho stack and film stack thickness on different lithography conditions. With the optimized stack, the total reflectivity for all incident angles at the interface can be controlled less than 0.5%, ideally 0.1%, which enhances process window (PW) most of the time. The theoretical results are verified by the experiment results from foundry, which helps the foundry achieve the mass production finally.

  9. X-ray lithography: a system integration effort

    NASA Astrophysics Data System (ADS)

    Selzer, Robert A.; Heaton, John; Vladimirsky, Yuli; Simon, Klaus

    1999-06-01

    Despite growing expectations of significant progress in projection lithography using shorter wavelengths, x-ray lithography is still the most developed and production ready technology compared with the other NGL approaches. For the timely introduction of this technology into the manufacturing environment the development of fully integrated x-ray lithography systems becomes very important. Reflecting manufacturing and R and D demands, the x-ray technology integration has been pursued for goth synchrotron radiation and x-ray point source based approaches. While the synchrotron-based approach provides the high volume platform, the point source will provide the platform for low volume production and R and D efforts. SAL recognizes the needs for both, a synchrotron based stepper as well as a point source stepper and is focused on meeting those needs. This paper will present the status of integration efforts at SAL utilizing a point source system.

  10. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  11. ILT for double exposure lithography with conventional and novel materials

    NASA Astrophysics Data System (ADS)

    Poonawala, Amyn; Borodovsky, Yan; Milanfar, Peyman

    2007-03-01

    Multiple paths exists to provide lithography solutions pursuant to Moore's Law for next 3-5 generations of technology, yet each of those paths inevitably leads to solutions eventually requiring patterning at k I < 0.30 and below. In this article, we explore double exposure single development lithography for k I >= 0.25 (using conventional resist) and k1 < 0.25 (using new out-of-sight out-of-mind materials). For the case of k I >= 0.25, we propose a novel double exposure inverse lithography technique (ILT) to split the pattern. Our algorithm is based on our earlier proposed single exposure ILT framework, and works by decomposing the aerial image (instead of the target pattern) into two parts. It also resolves the phase conflicts automatically as part of the decomposition, and the combined aerial image obtained using the estimated masks has a superior contrast. For the case of k I < 0.25, we focus on analyzing the use of various dual patterning techniques enabled by the use of hypothetic materials with properties that allow for the violation of the linear superposition of intensities from the two exposures. We investigate the possible use of two materials: contrast enhancement layer (CEL) and two-photon absorption resists. We propose a mathematical model for CEL, define its characteristic properties, and derive fundamental bounds on the improvement in image log-slope. Simulation results demonstrate that double exposure single development lithography using CEL enables printing 80nm gratings using dry lithography. We also combine ILT, CEL, and DEL to synthesize 2-D patterns with k I = 0.185. Finally, we discuss the viability of two-photon absorption resists for double exposure lithography.

  12. Mix-and-match lithography for half-micron technology

    NASA Astrophysics Data System (ADS)

    Flack, Warren W.; Dameron, David H.

    1991-08-01

    Half-micron lithography for a production environment is not considered realistic with currently available lithography tools. While optical steppers have high wafer throughputs, they do not have sufficient process latitude at half-micron geometries. In contrast, advanced technologies with sufficient capabilities for half-micron processing such as direct-write e-beam and x-ray lithography are extremely expensive and have low effective throughputs. A mix-and- match lithography approach can take advantage of the best features of both types of systems by sing an optical stepper for noncritical levels and an advanced lithography system for critical levels. In order to facilitate processing of a triple level metal half-micron CMOS technology, a mix-and-match scheme has been developed between a Hitachi HL-700 D e-beam direct write system and an Ultratech 1500 wide-field 1x stepper. The Hitachi is used to pattern an accurate zero or registration level. All critical levels are exposed on the Hitachi and aligned back to this zero level. The Ultratech is used to align all other process levels which do not have critical targets that are placed on subsequent process levels. The mix-and-match approach is discussed, and optical to e-beam as well as e-beam to optical alignment results from seven production lots are presented. The linear alignment error components X translation, Y translation, rotation and magnification are extracted and analyzed to determine their source. It was found that a simple adjustment improved the registration capabilities of these two lithography tools by reducing the X translation, Y translation and rotation standard deviations by a factor of two or more, while greatly reducing the magnification errors between the two tools.

  13. Modeling the rovibrationally excited C2H4OH radicals from the photodissociation of 2-bromoethanol at 193 nm.

    PubMed

    Ratliff, B J; Womack, C C; Tang, X N; Landau, W M; Butler, L J; Szpunar, D E

    2010-04-15

    This study photolytically generates, from 2-bromoethanol photodissociation, the 2-hydroxyethyl radical intermediate of the OH + ethene reaction and measures the velocity distribution of the stable radicals. We introduce an impulsive model to characterize the partitioning of internal energy in the C(2)H(4)OH fragment. It accounts for zero-point and thermal vibrational motion to determine the vibrational energy distribution of the nascent C(2)H(4)OH radicals and the distribution of total angular momentum, J, as a function of the total recoil kinetic energy imparted in the photodissociation. We render this system useful for the study of the subsequent dissociation of the 2-hydroxyethyl radical to the possible asymptotic channels of the OH + ethene reaction. The competition between these channels depends on the internal energy and the J distribution of the radicals. First, we use velocity map imaging to separately resolve the C(2)H(4)OH + Br((2)P(3/2)) and C(2)H(4)OH + Br((2)P(1/2)) photodissociation channels, allowing us to account for the 10.54 kcal/mol partitioned to the Br((2)P(1/2)) cofragment. We determine an improved resonance enhanced multiphoton ionization (REMPI) line strength for the Br transitions at 233.681 nm (5p (4)P(1/2) <-- 4p (2)P(3/2)) and 234.021 nm (5p (2)S(1/2) <-- 4p (2)P(1/2)) and obtain a spin-orbit branching ratio for Br((2)P(1/2)):Br((2)P(3/2)) of 0.26 +/- 0.03:1. Energy and momentum conservation give the distribution of total internal energy, rotational and vibrational, in the C(2)H(4)OH radicals. Then, using 10.5 eV photoionization, we measure the velocity distribution of the radicals that are stable to subsequent dissociation. The onset of dissociation occurs at internal energies much higher than those predicted by theoretical methods and reflects the significant amount of rotational energy imparted to the C(2)H(4)OH photofragment. Instead of estimating the mean rotational energy with an impulsive model from the equilibrium geometry of 2-bromoethanol, our model explicitly includes weighting over geometries across the quantum wave function with zero, one, and two quanta in the harmonic mode that most strongly alters the exit impact parameter. The model gives a nearly perfect prediction of the measured velocity distribution of stable radicals near the dissociation onset using a G4 prediction of the C-Br bond energy and the dissociation barrier for the OH + ethene channel calculated by Senosiain et al. (J. Phys. Chem. A 2006, 110, 6960). The model also indicates that the excited state dissociation proceeds primarily from a conformer of 2-bromoethanol that is trans across the C-C bond. We discuss the possible extensions of our model and the effect of the radical intermediate's J-distribution on the branching between the OH + ethene product channels. PMID:20302318

  14. Ablation de ZnO par laser UV (193 nm) : nano-agrégats en phase gazeuse

    NASA Astrophysics Data System (ADS)

    Ozerov, I.; Bulgakov, A.; Nelson, D.; Castell, R.; Sentis, M.; Marine, W.

    2003-06-01

    La condensation de nano-agrégats d'oxyde de zinc en phase gazeuse est mise en évidence lors de l'ablation de ZnO massif par laser ArF pulsé. Nous comparons l'évolution spatio-temporelle de la forme du panache d'ablation (plume) de ZnO sous vide et sous atmosphère de gaz de couverture (oxygène et/ou hélium) à partir des images CCD et des résultats issus d'analyses spectroscopiques. L'expansion du plasma et la croissance des nano-clusters sont influencées par l'effet du confinement de la plume dû aux collisions entre les particules ablatées et les molécules de gaz ambiant ainsi que par les réactions chimiques dans le cas de l'oxygène. Le spectre de rayonnement du plasma est constitué principalement par l'émission d'atomes excités de Zn neutre. Nous avons observé la photoluminescence des nano-agrégats en suspension dans le gaz ainsi que leur décomposition par laser ArF.

  15. Development and numerical solution of a mechanistic model for corneal tissue ablation with the 193 nm argon fluoride excimer laser

    NASA Astrophysics Data System (ADS)

    Fisher, Brian T.; Hahn, David W.

    2007-02-01

    We detail the development and implementation of a global ablation model that incorporates a dynamically changing tissue absorption coefficient. Detailed spectroscopic measurements rule out plasma-shielding effects during the laser-tissue interaction and thereby support a photochemical mechanism. The model predicts ablation rate behavior that agrees well with a variety of experimental ablation rate data and that substantially deviates from a static Beer-Lambert model. The dynamic model predicts an enhancement in the tissue absorption coefficient of about 25%-50% as compared with the initial, static value. In addition, the model predicts an increase in the tissue ablation rate as corneal hydration increases, which may provide additional insight into variations in refractive surgery outcome.

  16. EUV lithography optics for sub-9nm resolution

    NASA Astrophysics Data System (ADS)

    Kneer, Bernhard; Migura, Sascha; Kaiser, Winfried; Neumann, Jens Timo; van Schoot, Jan

    2015-03-01

    EUV lithography for resolution below 9 nm requires the numerical aperture of the projection optics to be significantly larger than 0.45. A configuration of 4x magnification, full field size and 6'' reticle is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable shadowing effects, which can only be controlled by increasing the magnification, hence reducing the system productivity. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm². We discuss the optical solutions for anamorphic high-NA lithography.

  17. Nanometer-scale placement in electron-beam lithography

    NASA Astrophysics Data System (ADS)

    Ferrera, Juan

    2000-12-01

    Electron-beam lithography is capable of high-resolution lithographic pattern generation (down to 10 nm or below). However, for conventional e-beam lithography, pattern- placement accuracy is inferior to resolution. Despite significant efforts to improve pattern placement, a limit is being approached. The placement capability of conventional e-beam tools is insufficient to fabricate narrow-band optical filters and lasers, which require sub-micrometer-pitch gratings with a high degree of spatial coherence. Moreover, it is widely recognized that placement accuracy will not be sufficient for future semiconductor device generations, with minimum feature sizes below 100 nm. In electron-beam lithography, an electromagnetic deflection system is used in conjunction with a laser-interferometer-controlled stage to generate high-resolution patterns over large areas. Placement errors arise because the laser interferometer monitors the stage position, but the e-beam can independently drift relative to the stage. Moreover, the laser interferometer can itself drift during exposure. To overcome this fundamental limitation, the method of spatial phase-locked electron-beam lithography has been proposed. The beam position is referenced to a high- fidelity grid, exposed by interference lithography, on the substrate surface. In this method, pattern-placement performance depends upon the accuracy of the reference grid and the precision with which patterns can be locked to the grid. The grid must be well characterized to serve as a reliable fiducial. This document describes work done to characterize grids generated by interference lithography. A theoretical model was developed to describe the spatial-phase progression of interferometric gratings and grids. The accuracy of the interference lithography apparatus was found to be limited by substrate mounting errors and uncertainty in setting the geometrical parameters that determine the angle of interference. Experimental measurements were

  18. Challenges and mitigation strategies for resist trim etch in resist-mandrel based SAQP integration scheme

    NASA Astrophysics Data System (ADS)

    Mohanty, Nihar; Franke, Elliott; Liu, Eric; Raley, Angelique; Smith, Jeffrey; Farrell, Richard; Wang, Mingmei; Ito, Kiyohito; Das, Sanjana; Ko, Akiteru; Kumar, Kaushik; Ranjan, Alok; O'Meara, David; Nawa, Kenjiro; Scheer, Steven; DeVillers, Anton; Biolsi, Peter

    2015-03-01

    Patterning the desired narrow pitch at 10nm technology node and beyond, necessitates employment of either extreme ultra violet (EUV) lithography or multi-patterning solutions based on 193nm-immersion lithography. With enormous challenges being faced in getting EUV lithography ready for production, multi-patterning solutions that leverage the already installed base of 193nm-immersion-lithography are poised to become the industry norm for 10 and 7nm technology nodes. For patterning sub-40nm pitch line/space features, self-aligned quadruple patterning (SAQP) with resist pattern as the first mandrel shows significant cost as well as design benefit, as compared to EUV lithography or other multi-patterning techniques. One of the most critical steps in this patterning scheme is the resist mandrel definition step which involves trimming / reformation of resist profile via plasma etch for achieving appropriate pitch after the final pattern. Being the first mandrel, the requirements for the Line Edge Roughness (LER) / Line Width Roughness (LWR); critical dimension uniformity (CDU); and profile in 3-dimensions for the resist trim / reformation etch is extremely aggressive. In this paper we highlight the unique challenges associated in developing resist trim / reformation plasma etch process for SAQP integration scheme and summarize our efforts in optimizing the trim etch chemistries, process steps and plasma etch parameters for meeting the mandrel definition targets. Finally, we have shown successful patterning of 30nm pitch patterns via the resist-mandrel SAQP scheme and its implementation for Si-fin formation at 7nm node.

  19. Learning Environments in Immersion and Non-Immersion Classrooms: Are They Different?

    ERIC Educational Resources Information Center

    Edwards, Viviane; Rehorick, Sally

    1990-01-01

    A study compared immersion and nonimmersion learning environments, as perceived by students, in 95 New Brunswick grade 6, 7, and 9 classes. In grade 6, no significant differences in perception were found; in grade 7, immersion students see their environment more positively; and in grade 9, the differences seem to disappear. (25 references)…

  20. Nanoimprint lithography for functional polymer patterning

    NASA Astrophysics Data System (ADS)

    Cui, Dehu

    2011-07-01

    Organic semiconductors have generated huge interested in recent years for low-cost and flexible electronics. Current and future device applications for semiconducting polymers include light-emitting diodes, thin-film transistors, photovoltaic cells, photodetectors, lasers, and memories. The performance of conjugated polymer devices depends on two major factors: the chain conformation in polymer film and the device architecture. Highly ordered chain structure usually leads to much improved performance by enhancing interchain interaction to facilitate carrier transport. The goal of this research is to improve the performance of organic devices with the nanoimprint lithography. The work begins with the controlling of polymer chain orientation in patterned nanostructures through nanoimprint mold design and process parameter manipulation, and studying the effect of chain ordering on material properties. Then, step-and-repeat thermal nanoimprint technique for large-scale continuous manufacturing of conjugated polymer nanostructures is developed. After that, Systematic investigation of polymer chain configuration by Raman spectroscopy is carried out to understand how nanoimprint process parameters, such as mold pattern size, temperature, and polymer molecular weight, affects polymer chain configuration. The results indicate that chain orientation in nanoimprinted polymer micro- and nanostructures is highly related to the nanoimprint temperature and the dimensions of the mold structures. The ability to create nanoscale polymer micro- and nanostructures and manipulate their internal chain conformation establishes an original experimental platform that enables studying the properties of functional polymers at the micro- and nanoscale and understanding their fundamental structure-property relationships. In addition to the impact on basic research, the techniques developed in this work are important in applied research and development. Large-area conjugated polymer micro- and

  1. Capillary force lithography for cardiac tissue engineering.

    PubMed

    Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

    2014-06-10

    Cardiovascular disease remains the leading cause of death worldwide(1). Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart's extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale(2). Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering(3-5). A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling(2). Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart(6-9). Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)(8) and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function(10-14). Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively(15,16). Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip

  2. Capillary Force Lithography for Cardiac Tissue Engineering

    PubMed Central

    Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

    2014-01-01

    Cardiovascular disease remains the leading cause of death worldwide1. Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart’s extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale2. Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering3-5. A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling2. Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart6-9. Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)8 and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function10-14. Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively15,16. Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip and the PUA

  3. Comparison study for sub-0.13-μm lithography between ArF and KrF lithography

    NASA Astrophysics Data System (ADS)

    Kim, Seok-Kyun; Kim, YoungSik; Kim, Jin-Soo; Bok, Cheol-Kyu; Ham, Young-Mog; Baik, Ki-Ho

    2000-07-01

    In this paper we investigated the feasibility of printing sub-0.13 micrometers device patterns with ArF and KrF lithography by using experiment and simulation. To do this we evaluated various cell structures with different sizes from 0.26 micrometers to 0.20 micrometers pitch. In experiment 0.60NA ArF and 0.70NA KrF exposure tools, commercial and in house resists and bottom anti-reflective coating (BARC) materials are used. To predict and compare with experimental data we also used our developed simulation tool HOST base don diffused aerial iamge model. We found that ArF lithography performance is a little bit better than KrF and therefore 0.70NA KrF lithography can be used up to 0.12 micrometers design rule device and 0.60NA ArF lithography can be used up to 0.11 micrometers . But to get more than 10 percent expose latitude, 0.13 micrometers with KrF and 0.12 micrometers with ArF are the minimum design rule size. However to obtain process margin we had to use extreme off-axis illumination (OAI) which results in large isolated- dense bias and poor linearity including isolated pattern. Using higher NA can reduce ID bias and mask error factor. For contact hole it is more effective to use KrF lithography because resist thermal flow process can be used to shrink C/H size. Our developed ArF resist and BARC shows good performance and we can reduce k1 value up to 0.34. Through this study we verified again that ArF lithography can be applied for sub-0.13 micrometers device through sub-0.10 micrometers with high contrast resist and 0.75NA exposure tool.

  4. Understanding Immersivity: Image Generation and Transformation Processes in 3D Immersive Environments

    PubMed Central

    Kozhevnikov, Maria; Dhond, Rupali P.

    2012-01-01

    Most research on three-dimensional (3D) visual-spatial processing has been conducted using traditional non-immersive 2D displays. Here we investigated how individuals generate and transform mental images within 3D immersive (3DI) virtual environments, in which the viewers perceive themselves as being surrounded by a 3D world. In Experiment 1, we compared participants’ performance on the Shepard and Metzler (1971) mental rotation (MR) task across the following three types of visual presentation environments; traditional 2D non-immersive (2DNI), 3D non-immersive (3DNI – anaglyphic glasses), and 3DI (head mounted display with position and head orientation tracking). In Experiment 2, we examined how the use of different backgrounds affected MR processes within the 3DI environment. In Experiment 3, we compared electroencephalogram data recorded while participants were mentally rotating visual-spatial images presented in 3DI vs. 2DNI environments. Overall, the findings of the three experiments suggest that visual-spatial processing is different in immersive and non-immersive environments, and that immersive environments may require different image encoding and transformation strategies than the two other non-immersive environments. Specifically, in a non-immersive environment, participants may utilize a scene-based frame of reference and allocentric encoding whereas immersive environments may encourage the use of a viewer-centered frame of reference and egocentric encoding. These findings also suggest that MR performed in laboratory conditions using a traditional 2D computer screen may not reflect spatial processing as it would occur in the real world. PMID:22908003

  5. Waveguide effect in high-NA EUV lithography: The key to extending EUV lithography to the 4-nm node

    NASA Astrophysics Data System (ADS)

    Yeung, Michael; Barouch, Eytan; Oh, Hye-Keun

    2015-06-01

    One of the main concerns about EUV lithography is whether or not it can be extended to very high numerical aperture. In this paper, rigorous electromagnetic simulation is first used to show that there is an interesting waveguide effect occurring in the 4-nm feature size regime. An exact mathematical analysis is then presented to explain the effect observed in the simulation. This waveguide effect is applied to simulate the printing of 4-nm lines and spaces with excellent aerial-image contrast and peak intensity. The feasibility of EUV lithography for printing logic circuits containing general two-dimensional patterns with 4-nm feature size is also demonstrated.

  6. Extreme aberration properties of the combined immersion lenses and their prospects in ion nanolithography

    NASA Astrophysics Data System (ADS)

    Zhukov, Valery A.; Berdnikov, Yaroslav A.; Zhurkin, Evgeni E.

    2004-03-01

    This paper is the further development of work of authors [V.A. Zhukov et. al., Proceedings of SPIE, 5128, (2003)] devoted to theoretical research of the limiting resolution or Critical Development (CD) in ion lithography at use as objectives the combined axial symmetrical immersion lenses. In the given paper the refinement of the basic critical ion-optical parameters of objective combined immersion lenses is carried out. These parameters are the coefficient of a chromatic aberration of first order Cc and the maximal density of a current in the superconducting coil of excitation of combined lens I/S depending on parameter of retardation (immersion) τ=Wt/Wo. Where Wt is energy of ions on a target, W is the energy of ions before a lens, I is a current, and S is area of cross section of the coil. It is shown, that in combined axial symmetrical lenses it is possible to compensate in principle as much as full a chromatic abberation of the first order Cc and a spherical abberation of the third order Cs, since at parametere of retardation τ --> 0 also Cc, Cs -->0. However, full compensation can take place only at τ=0, i.e. at a full stopping of particles. With the help of a method of Monte Carlo the distributions of implanted Ga atoms on depth and on radial coordinate of a crystal target from silicon are calculated at falling for target surface of indefinitely thin beam of Ga+ ions by energy Wt in 1 keV. From these calculations it follows, that using ion implantation from the focused ion beams, it is possible to receive 2 x 1012 pixels with the size 3.6 x 3.6 nm2 everyone, in the frame in the size 3 x 3 mm2 on an ion-lithographic target.

  7. Implementation of double dipole lithography for 45-nm node poly and diffusion layer manufacturing with 0.93NA

    NASA Astrophysics Data System (ADS)

    Wu, Meng-Hsiu; Hsu, Michael; Hsu, Stephen; Lu, Bo-Jou; Cheng, Yung-Feng; Chou, Yueh-Lin; Yang, Chuen-Huei

    2007-05-01

    The double dipole lithography (DDL) has been proven to be one of the resolution enhancement technologies for 45 nm node. In this paper, we have implemented a full-chip DDL process for 45nm node using ArF immersion lithography. Immersion exposure system can effectively enlarge the process DoF (depth of focus). Combining with dipole illumination can help us to reach smaller k1 value (~0.31) and meet the process requirements of poly and diffusion layers on 45nm node by using only 0.93 NA exposure tool. However, from a full-chip processing point of view, the more challenging question should be: how to calibrate a good model from two exposure and decompose original design to separate mask sets? Does the image performance achieve a production worthy standard? At 45nm node, we are using one-fourth of the exposure wavelength for the patterning; there is very little room for error. For DDL full-chip processing, we need a robust application strategy to ensure a very tight CD control. We implemented an integrated RET solution that combines DDL along with polarization, immersion system, and model based OPC to meet full-chip manufacturing requirement. This is to be a dual-exposure mask solution for 45nm node - X-dipole exposure for vertical mask and horizontal for Y-dipole. We show a process design flow starting from the design rule analysis, layout decomposition, model-based OPC, manufacturing reliability check, and then to the mask data preparation. All of the work has been implemented using MaskWeaver TM geometry engine. Additionally, we investigated printability for through-pitch line features, ASIC logic, and SRAM cell design patterns. Different circuit layout needs dedicated special OPC treatment. To characterize the related process performance, we use mask enhancement error factor (MEEF), process window (PW), and critical dimension uniformity (CDU) to analyze the simulation data. Since we used the tri-tone Att-PSM, the mask making flow and spec was also taking into

  8. Ventilatory drive during face immersion in man.

    PubMed Central

    Mukhtar, M R; Patrick, J M

    1986-01-01

    Four series of experiments have been performed in normal subjects to determine whether face immersion gives rise to a reduction in ventilatory drive. Such a response might be advantageous, like the cardiovascular components of the 'diving response', in prolonging breath-hold diving. In the first series, ventilatory drive was measured indirectly as the maximal voluntary breath-holding time, starting each breath-hold at the same alveolar partial pressures and at the same lung volume. When the face was immersed in cold water, breath-holding times were increased by 14%. The breaking point occurred at a higher alveolar PCO2 and the rate of rise of PCO2 was not affected. Control immersions in warm water had no effect. In the second and third series, subjects lay prone and breathed either air or 5% CO2 through a valve in the bottom of a bowl. Minute ventilation was measured before, during and after 5 min of face immersion in cold water. Transient hypoventilations of 13% and 10% respectively were seen, accompanied by small rises in alveolar PCO2. In control experiments, immersion of the forearm in cold water produced the opposite responses. In the fourth series, a cold wet pack was applied to the face during moderate steady-state exercise. A small irregular hypoventilation was seen, but not in control experiments when a warm pack was applied. Face temperatures fell by about 10 degrees C in these experiments. No material changes were found in the temperatures of the inspired air or of the aural canal. It is concluded that face immersion in cold water causes a modest reduction in ventilatory drive in man. This appears to be a component of the 'diving response'. PMID:3083097

  9. Biologically inspired omniphobic surfaces by reverse imprint lithography.

    PubMed

    Hensel, René; Finn, Andreas; Helbig, Ralf; Braun, Hans-Georg; Neinhuis, Christoph; Fischer, Wolf-Joachim; Werner, Carsten

    2014-04-01

    Springtail skin morphology is translated into robust omniphobic polymer membranes by reverse imprint lithography. The combination of overhanging cross-sections and their arrangement in a self-supporting comblike pattern are crucial for mechanically stable coatings that can be even applied to curved surfaces. PMID:24375518

  10. Correcting lithography hot spots during physical-design implementation

    NASA Astrophysics Data System (ADS)

    Luk-Pat, Gerard T.; Miloslavsky, Alexander; Ikeuchi, Atsuhiko; Suzuki, Hiroaki; Kyoh, Suigen; Izuha, Kyoko; Tseng, Frank; Wen, Linni

    2006-10-01

    As the technology node shrinks, printed-wafer shapes show progressively less similarity to the design-layout shapes, even with optical proximity correction (OPC). Design tools have a restricted ability to address this shape infidelity. Their understanding of lithography effects is limited, taking the form of design rules that try to prevent "Hot Spots" - locations that demonstrate wafer-printing problems. These design rules are becoming increasingly complex and therefore less useful in addressing the lithography challenges. Therefore, design tools that have a better understanding of lithography are becoming a necessity for technology nodes of 65 nm and below. The general goal of this work is to correct lithography Hot Spots during physical-design implementation. The specific goal is to automatically fix a majority of the Hot Spots in the Metal 2 layers and above, with a run time on the order of a few hours per layer. Three steps were taken to achieve this goal. First, Hot Spot detection was made faster by using rule-based detection. Second, Hot Spot correction was automated by using rule-based correction. Third, convergence of corrections was avoided by performing correction locally, which means that correcting one Hot Spot was very unlikely to create new Hot Spots.

  11. Matrix-assisted polymer pen lithography induced Staudinger Ligation.

    PubMed

    Bian, Shudan; Schesing, Kevin B; Braunschweig, Adam B

    2012-05-21

    The Staudinger Ligation has been combined with Polymer Pen Lithography to create patterns of fluorescent and redox-active inks with 1-micrometer scale feature diameters over centimeter-scale areas. This report presents a straightforward strategy to expand the scope of organic reactions employed in surface science. PMID:22509494

  12. Beyond EUV lithography: a comparative study of efficient photoresists' performance

    PubMed Central

    Mojarad, Nassir; Gobrecht, Jens; Ekinci, Yasin

    2015-01-01

    Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra. PMID:25783209

  13. Beyond EUV lithography: a comparative study of efficient photoresists' performance.

    PubMed

    Mojarad, Nassir; Gobrecht, Jens; Ekinci, Yasin

    2015-01-01

    Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra. PMID:25783209

  14. Condenser for extreme-UV lithography with discharge source

    DOEpatents

    Sweatt, William C.; Kubiak, Glenn D.

    2001-01-01

    Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

  15. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhurl, Avijit K.

    2000-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  16. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhuri, Avijit

    2001-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  17. Effective decomposition algorithm for self-aligned double patterning lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Hongbo; Du, Yuelin; Wong, Martin D. F.; Topaloglu, Rasit; Conley, Will

    2011-04-01

    Self-aligned double patterning (SADP) lithography is a novel lithography technology that has the intrinsic capability to reduce the overlay in the double patterning lithography (DPL). Although SADP is the critical technology to solve the lithography difficulties in sub-32nm 2D design, the questions - how to decompose a layout with reasonable overlay and how to perform a decomposability check - are still two open problems with no published work. In this paper, by formulating the problem into a SAT formation, we can answer the above two questions optimally. This is the first published paper with detailed algorithm to perform the SADP decomposition. In a layout, we can efficiently check whether a layout is decomposable. For a decomposable layout, our algorithm guarantees to find a decomposition solution with reasonable overlay reduction requirement. With little changes on the clauses in the SAT formula, we can address the decomposition problem for both the positive tone process and the negative tone process. Experimental results validate our method, and decomposition results for Nangate Open Cell Library and larger test cases are also provided with competitive run times.

  18. Technology of alignment mark in electron beam lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Min; Xu, Tang; Chen, Baoqin; Niu, Jiebin

    2014-08-01

    Electron beam direct wring lithography has been an indispensable approach by which all sorts of novel nano-scale devices include many kinds optical devices can be fabricated. Alignment accuracy is a key factor especially to those devices which need multi-level lithography. In addition to electron beam lithography system itself the quality of alignment mark directly influences alignment accuracy. This paper introduces fundamental of alignment mark detection and discusses some techniques of alignment mark fabrication along with considerations for obtaining highly accurate alignment taking JBX5000LS and JBX6300FS e-beam lithography systems for example. The fundamental of alignment mark detection is expounded first. Many kinds of factors which can impact on the quality of alignment mark are analyzed including mark materials, depth of mark groove and influence of multi-channel process. It has been proved from experiments that material used as metal mark with higher average atomic number is better beneficial for getting high alignment accuracy. Depth of mark groove is required to 1.5~5 μm on our experience. The more process steps alignment mark must pass through, the more probability of being damaged there will be. So the compatibility of alignment mark fabrication with the whole device process and the protection of alignment mark are both need to be considered in advance.

  19. Solid state laser driver for Extreme Ultraviolet Lithography. Revision 1

    SciTech Connect

    Zapata, L.E.; Honig, J.; Reichert, P.; Hackel, L.A.

    1994-05-01

    We describe the design and initial performance of a Nd:YAG laser master oscillator/phase conjugated power amplifier as a driver for extreme ultraviolet lithography. The design provides 0.5 to 1 joule per pulse with about 5 ns pulse width and excellent beam quality up through 1.5 kHz repetition frequency.

  20. Study on photochemical analysis system (VLES) for EUV lithography

    NASA Astrophysics Data System (ADS)

    Sekiguchi, A.; Kono, Y.; Kadoi, M.; Minami, Y.; Kozawa, T.; Tagawa, S.; Gustafson, D.; Blackborow, P.

    2007-03-01

    A system for photo-chemical analysis of EUV lithography processes has been developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch (Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a measurement system RDA (Litho Tech Japan) for the development rate of photo-resists, and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of EUV lithography can be performed without any lithography tool (Stepper and Scanner system) that is capable of imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm wavelength. The simulation successfully predicts the resist behavior. Thus it is confirmed that the system enables efficient evaluation of the performance of EUV lithography processes.

  1. Cultural Immersion as a Strategy for Empowerment.

    PubMed

    Charles, Jennell P

    2015-01-01

    Cultural immersion experiences offered through study abroad opportunities for nursing students have been increasing in recent years. Examining the impact of these experiences has largely focused on students and not on the faculty leading the experiences. It is important to understand the impact of these experiences on all participants. Exploring the literature on empowerment provides some clarity on the relationship between studying abroad and its impact on participants. Further research linking cultural immersion experiences with empowerment is needed to better understand this relationship and the possibilities of empowering both students and faculty engaged in these exciting opportunities. PMID:26376576

  2. Water immersion in neonatal bereavement photography.

    PubMed

    Duffey, Heather

    2014-01-01

    Water immersion in neonatal bereavement photography is a new technique intended to enhance the quality of the photographs provided to families following their loss. Water immersion appears to be most helpful following a second trimester fetal demise. This technique can be used by nurses, professional photographers and others in addition to more traditional neonatal bereavement photography. It does not require special skills or equipment and can be implemented in virtually any perinatal setting. The enhanced quality of photographs produced with this method can potentially provide a source of comfort to grieving families.

  3. Cultural Immersion as a Strategy for Empowerment.

    PubMed

    Charles, Jennell P

    2015-01-01

    Cultural immersion experiences offered through study abroad opportunities for nursing students have been increasing in recent years. Examining the impact of these experiences has largely focused on students and not on the faculty leading the experiences. It is important to understand the impact of these experiences on all participants. Exploring the literature on empowerment provides some clarity on the relationship between studying abroad and its impact on participants. Further research linking cultural immersion experiences with empowerment is needed to better understand this relationship and the possibilities of empowering both students and faculty engaged in these exciting opportunities.

  4. EUV lithography: NXE platform performance overview

    NASA Astrophysics Data System (ADS)

    Peeters, Rudy; Lok, Sjoerd; Mallman, Joerg; van Noordenburg, Martijn; Harned, Noreen; Kuerz, Peter; Lowisch, Martin; van Setten, Eelco; Schiffelers, Guido; Pirati, Alberto; Stoeldraijer, Judon; Brandt, David; Farrar, Nigel; Fomenkov, Igor; Boom, Herman; Meiling, Hans; Kool, Ron

    2014-04-01

    The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML's third generation EUV system and has an NA of 0.33. It succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience. Good overlay and imaging performance has been shown on the NXE:3300B system in line with 22nm device requirements. Full wafer CDU performance of <1.5nm for 22nm dense and iso lines at a dose of ~16mJ/cm2 has been achieved. Matched machine overlay (NXE to immersion) of around 3.5nm has been demonstrated on multiple systems. Dense lines have been exposed down to 13nm half pitch, and contact holes down to 17nm half pitch. 10nm node Metal-1 layers have been exposed with a DOF of 120nm, and using single spacer assisted double patterning flow a resolution of 9nm has been achieved. Source power is the major challenge to overcome in order to achieve cost-effectiveness in EUV and enable introduction into High Volume Manufacturing. With the development of the MOPA+prepulse operation of the source, steps in power have been made, and with automated control the sources have been prepared to be used in a preproduction fab environment. Flexible pupil formation is under development for the NXE:3300B which will extend the usage of the system in HVM, and the resolution for the full system performance can be extended to 16nm. Further improvements in defectivity performance have been made, while in parallel full-scale pellicles are being developed. In this paper we will discuss the current NXE:3300B performance, its future enhancements and the recent progress in EUV source performance.

  5. Substrate conformal imprint lithography for nanophotonics

    NASA Astrophysics Data System (ADS)

    Verschuuren, M. A.

    2010-03-01

    The field of nano-photonics studies the interaction and control of light with dielectric, semiconductor and metal structures which are comparable in size or smaller than the vacuum wavelength of light. In this thesis we present Substrate Conformal Imprint Lithography (SCIL) as a novel wafer-scale nanoimprint method with nano-scale resolution which combines the resolution and accuracy of rigid stamps with the flexibility of soft stamp methods. Chapter two describes the SCIL soft nanoimprint process and introduces a novel silica sol-gel imprint resist. A new soft rubber stamp material is described which enables sub-10 nm resolution. We demonstrate that SCIL imprinted patterns have on average less than 0.1 nm distortion and demonstrate sub-50 nm overlay alignment. Chapter 3 demonstrates 30 nm dense structures and features with aspect ratios from 1/640 up to 5. Imprinted sol-gel patterns can be transferred into underlying materials while maintaining sub-10 nm resolution. Two methods are demonstrated to pattern noble metals in particle arrays and sub-wavelength hole arrays. SCIL is applied to produce photonic crystal power InGaN LEDs which exhibit strong modification of the emission pattern. Chapter 4 demonstrates a relatively simple route towards 3D woodpile type photonic crystals. We show a four layer woodpile type structure with 70 nm features on a 240 nm pitch, which is temperature stable up to 1000 C. Chapter 5 demonstrates a novel fabrication route to large area nano hole arrays, which are interesting as angle independent color filters and for sensor applications. A solid state index matched hole array exhibits SPP mediated super resonant transmission. Chapter 6 treats single mode polarization stabilized Vertical Cavity Surface Emitting Lasers (VCSELs). The lasers produced by SCIL exhibit equal performance as devices produced by e-beam. VCSELs with SCIL imprinted sub-wavelength gratings increase the laser efficiency by 29 % compared to conventional gratings

  6. Protein assay structured on paper by using lithography

    NASA Astrophysics Data System (ADS)

    Wilhelm, E.; Nargang, T. M.; Al Bitar, W.; Waterkotte, B.; Rapp, B. E.

    2015-03-01

    There are two main challenges in producing a robust, paper-based analytical device. The first one is to create a hydrophobic barrier which unlike the commonly used wax barriers does not break if the paper is bent. The second one is the creation of the (bio-)specific sensing layer. For this proteins have to be immobilized without diminishing their activity. We solve both problems using light-based fabrication methods that enable fast, efficient manufacturing of paper-based analytical devices. The first technique relies on silanization by which we create a flexible hydrophobic barrier made of dimethoxydimethylsilane. The second technique demonstrated within this paper uses photobleaching to immobilize proteins by means of maskless projection lithography. Both techniques have been tested on a classical lithography setup using printed toner masks and on a lithography system for maskless lithography. Using these setups we could demonstrate that the proposed manufacturing techniques can be carried out at low costs. The resolution of the paper-based analytical devices obtained with static masks was lower due to the lower mask resolution. Better results were obtained using advanced lithography equipment. By doing so we demonstrated, that our technique enables fabrication of effective hydrophobic boundary layers with a thickness of only 342 μm. Furthermore we showed that flourescine-5-biotin can be immobilized on the non-structured paper and be employed for the detection of streptavidinalkaline phosphatase. By carrying out this assay on a paper-based analytical device which had been structured using the silanization technique we proofed biological compatibility of the suggested patterning technique.

  7. Controlling linewidth roughness in step and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Schmid, Gerard M.; Khusnatdinov, Niyaz; Brooks, Cynthia B.; LaBrake, Dwayne; Thompson, Ecron; Resnick, Douglas J.; Owens, Jordan; Ford, Arnie; Sasaki, Shiho; Toyama, Nobuhito; Kurihara, Masaaki; Hayashi, Naoya; Kobayashi, Hideo; Sato, Takashi; Nagarekawa, Osamu; Hart, Mark W.; Gopalakrishnan, Kailash; Shenoy, Rohit; Jih, Ron; Zhang, Ying; Sikorski, Edmund; Rothwell, Mary Beth; Yoshitake, Shusuke; Sunaoshi, Hitoshi; Yasui, Kenichi

    2008-04-01

    Despite the remarkable progress made in extending optical lithography to deep sub-wavelength imaging, the limit for the technology seems imminent. At 22nm half pitch design rules, neither very high NA tools (NA 1.6), nor techniques such as double patterning are likely to be sufficient. One of the key challenges in patterning features with these dimensions is the ability to minimize feature roughness while maintaining reasonable process throughput. This limitation is particularly challenging for electron and photon based NGL technologies, where fast chemically amplified resists are used to define the patterned images. Control of linewidth roughness (LWR) is critical, since it adversely affects device speed and timing in CMOS circuits. Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. This technology has been shown to be an effective method for replication of nanometer-scale structures from a template (imprint mask). As a high fidelity replication process, the resolution of imprint lithography is determined by the ability to create a master template having the required dimensions. Although the imprint process itself adds no additional linewidth roughness to the patterning process, the burden of minimizing LWR falls to the template fabrication process. Non chemically amplified resists, such as ZEP520A, are not nearly as sensitive but have excellent resolution and can produce features with very low LWR. The purpose of this paper is to characterize LWR for the entire imprint lithography process, from template fabrication to the final patterned substrate. Three experiments were performed documenting LWR in the template, imprint, and after pattern transfer. On average, LWR was extremely low (less than 3nm, 3σ), and independent of the processing step and feature size.

  8. Linewidth roughness characterization in step and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Schmid, Gerard M.; Khusnatdinov, Niyaz; Brooks, Cynthia B.; LaBrake, Dwayne; Thompson, Ecron; Resnick, Douglas J.

    2008-05-01

    Despite the remarkable progress made in extending optical lithography to deep sub-wavelength imaging, the limit for the technology seems imminent. At 22nm half pitch design rules, neither very high NA tools (NA 1.6), nor techniques such as double patterning are likely to be sufficient. One of the key challenges in patterning features with these dimensions is the ability to minimize feature roughness while maintaining reasonable process throughput. This limitation is particularly challenging for electron and photon based NGL technologies, where fast chemically amplified resists are used to define the patterned images. Control of linewidth roughness (LWR) is critical, since it adversely affects device speed and timing in CMOS circuits. Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. This technology has been shown to be an effective method for replication of nanometer-scale structures from a template (imprint mask). As a high fidelity replication process, the resolution of imprint lithography is determined by the ability to create a master template having the required dimensions. Although the imprint process itself adds no additional linewidth roughness to the patterning process, the burden of minimizing LWR falls to the template fabrication process. Non chemically amplified resists, such as ZEP520A, are not nearly as sensitive but have excellent resolution and can produce features with very low LWR. The purpose of this paper is to characterize LWR for the entire imprint lithography process, from template fabrication to the final patterned substrate. Three experiments were performed documenting LWR in the template, imprint, and after pattern transfer. On average, LWR was extremely low (less than 3nm, 3σ), and independent of the processing step and feature size.

  9. Children's Learning Strategies in Language Immersion Classrooms.

    ERIC Educational Resources Information Center

    Chamot, Anna Uhl; El-Dinary, Pamela Beard

    This paper reports on an investigation of learning strategy applications in elementary foreign language immersion classrooms. The focus of the paper is on identifying strategies more and less effective learners use for classroom reading and writing tasks in the target language. Think-aloud data from third grade and fourth grade students were…

  10. Going beyond Words: The Arapaho Immersion Program.

    ERIC Educational Resources Information Center

    Greymorning, Steve

    This paper examines the growth and development of the Arapaho immersion program and discusses language revitalization strategies and methods used on the Wind River Reservation (Wyoming). Following a community request for an Arapaho language and culture program in reservation public schools, a test class of kindergarten students received an hour of…

  11. Miniature optically immersed thermistor bolometer arrays.

    PubMed

    De Waard, R; Weiner, S

    1967-08-01

    Immersed thermistor bolometers have been in use since 1958 as sensors for ir horizon scanners employed in attitude control of earth-orbiting vehicles.(1) These detectors usually use a single small thermistor flake optically immersed in an antireflection coated pure germanium or silicon hemisphere or hyperhemisphere.(2) Studies of the earth's atmospheric horizon from orbiting vehicles indicate that the most useful radiant power lies in the carbon dioxide spectrum near 15 micro and in the rotational water bands of atmospheric moisture in the spectrum beyond 20 micro.(3) These atmospheric constituents produce high ir optical density and hence provide small angle horizon resolution. Carbon dioxide has the additional advantage, by being uniformly distributed in the atmosphere, of providing a stable horizon. The purpose of this paper is to describe briefly two types of five-element linear arrays of thermistor flakes optically immersed in germanium and silicon lenses (Fig. 1). These detecrs were designed for an advanced horizon definition study program at NASA-Langley Research Center.(4) Germanium immersion is employed for best detectivity in the carbon dioxide spectrum from 14 micro to 16 micro and silicon for the spectrum beyond 20 micro.

  12. Digital Immersive Virtual Environments and Instructional Computing

    ERIC Educational Resources Information Center

    Blascovich, Jim; Beall, Andrew C.

    2010-01-01

    This article reviews theory and research relevant to the development of digital immersive virtual environment-based instructional computing systems. The review is organized within the context of a multidimensional model of social influence and interaction within virtual environments that models the interaction of four theoretical factors: theory…

  13. Using Immersive Virtual Environments for Certification

    NASA Technical Reports Server (NTRS)

    Lutz, R.; Cruz-Neira, C.

    1998-01-01

    Immersive virtual environments (VEs) technology has matured to the point where it can be utilized as a scientific and engineering problem solving tool. In particular, VEs are starting to be used to design and evaluate safety-critical systems that involve human operators, such as flight and driving simulators, complex machinery training, and emergency rescue strategies.

  14. Creative Experimental and Total Environmental Immersion

    ERIC Educational Resources Information Center

    Vento, Charles J.

    1970-01-01

    Reports on the concept of a circular room which includes a 360-degree multi-screen, multi-projection facility to provide vicarious curriculum experiences," and describes a plastic inflatable room designed to immerse the participant in a multiple image experience." (Author/AA)

  15. Late Immersion Foundation Document: Teachers and Administrators

    ERIC Educational Resources Information Center

    Alberta Education, 2010

    2010-01-01

    The aim of this document is to give teachers and administrators the contextual and pedagogical tools for the late immersion program. It acts as a guide for beginning and experienced teachers who need to update their knowledge regarding this program and its details. For many working in this area, it also confirms their daily practices as well as…

  16. Learning in an immersive digital theater

    NASA Astrophysics Data System (ADS)

    Sumners, C.; Reiff, P.; Weber, W.

    2008-12-01

    The Houston Museum of Natural Science, in collaboration with Rice University has an outreach program taking portable digital theaters to schools and community sites for over five years and has conducted research on student learning in this immersive environment. By using an external independent evaluator, the effectiveness of NASA-funded Education and Public Outreach (EPO) projects can be assessed. This paper documents interactive techniques and learning strategies in full-dome digital theaters. The presentation is divided into Evaluation Strategies and Results and Interactivity Strategies and Results. All learners from grades 3-12 showed statistically significant short-term increase in knowledge of basic Earth science concepts after a single 22-min show. Improvements were more significant on items that were taught using more than one modality of instruction: hearing, seeing, discussion, and immersion. Thus immersive theater can be an effective as well as engaging teaching method for Earth and Space science concepts, particularly those that are intrinsically three-dimensional and thus most effectively taught in an immersive environment. The portable system allows taking the educational experience to rural and tribal sites where the underserved students could not afford the time or expense to travel to museums.

  17. Beyond Language in Indigenous Language Immersion Schooling.

    ERIC Educational Resources Information Center

    Stairs, Arlene; Peters, Margaret; Perkins, Elizabeth

    1999-01-01

    The Akwesasne Freedom School, on the Akwesasne Mohawk reservation (New York and Canada), is an independent immersion school that preserves not only the Mohawk language but also socialization patterns, styles of interpersonal relations, ethical principles, and aesthetic sensibilities. The curriculum is based on the Iroquoian Thanksgiving Address,…

  18. How One Class Experienced Cultural Immersion

    ERIC Educational Resources Information Center

    Allery, Virginia

    2009-01-01

    Twenty-one teacher candidates and faculty from Turtle Mountain Community College (TMCC, Belcourt, North Dakota) and Cikana Cankdeska Community College (CCCC, Fort Totten, North Dakota) traveled by train from North Dakota to Minneapolis, Minnesota, for an immersion experience as part of their Human Relations and Multicultural Education. The group…

  19. 46 CFR 199.273 - Immersion suits.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... appropriate size for each person on board. (b) If watch stations, work stations, or work sites are remote from... suits stowed at the watch stations, work stations, or work sites to equal the number of persons normally on watch in, or assigned to, those locations at any time. (c) The immersion suits required...

  20. 46 CFR 199.273 - Immersion suits.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... appropriate size for each person on board. (b) If watch stations, work stations, or work sites are remote from... suits stowed at the watch stations, work stations, or work sites to equal the number of persons normally on watch in, or assigned to, those locations at any time. (c) The immersion suits required...

  1. 46 CFR 199.273 - Immersion suits.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... appropriate size for each person on board. (b) If watch stations, work stations, or work sites are remote from... suits stowed at the watch stations, work stations, or work sites to equal the number of persons normally on watch in, or assigned to, those locations at any time. (c) The immersion suits required...

  2. Architectures for Developing Multiuser, Immersive Learning Scenarios

    ERIC Educational Resources Information Center

    Nadolski, Rob J.; Hummel, Hans G. K.; Slootmaker, Aad; van der Vegt, Wim

    2012-01-01

    Multiuser immersive learning scenarios hold strong potential for lifelong learning as they can support the acquisition of higher order skills in an effective, efficient, and attractive way. Existing virtual worlds, game development platforms, and game engines only partly cater for the proliferation of such learning scenarios as they are often…

  3. Immersion Calorimetry: Molecular Packing Effects in Micropores.

    PubMed

    Madani, S Hadi; Silvestre-Albero, Ana; Biggs, Mark J; Rodríguez-Reinoso, Francisco; Pendleton, Phillip

    2015-12-21

    Repeated and controlled immersion calorimetry experiments were performed to determine the specific surface area and pore-size distribution (PSD) of a well-characterized, microporous poly(furfuryl alcohol)-based activated carbon. The PSD derived from nitrogen gas adsorption indicated a narrow distribution centered at 0.57±0.05 nm. Immersion into liquids of increasing molecular sizes ranging from 0.33 nm (dichloromethane) to 0.70 nm (α-pinene) showed a decreasing enthalpy of immersion at a critical probe size (0.43-0.48 nm), followed by an increase at 0.48-0.56 nm, and a second decrease at 0.56-0.60 nm. This maximum has not been reported previously. After consideration of possible reasons for this new observation, it is concluded that the effect arises from molecular packing inside the micropores, interpreted in terms of 2D packing. The immersion enthalpy PSD was consistent with that from quenched solid density functional theory (QSDFT) analysis of the nitrogen adsorption isotherm.

  4. Immersion Calorimetry: Molecular Packing Effects in Micropores.

    PubMed

    Madani, S Hadi; Silvestre-Albero, Ana; Biggs, Mark J; Rodríguez-Reinoso, Francisco; Pendleton, Phillip

    2015-12-21

    Repeated and controlled immersion calorimetry experiments were performed to determine the specific surface area and pore-size distribution (PSD) of a well-characterized, microporous poly(furfuryl alcohol)-based activated carbon. The PSD derived from nitrogen gas adsorption indicated a narrow distribution centered at 0.57±0.05 nm. Immersion into liquids of increasing molecular sizes ranging from 0.33 nm (dichloromethane) to 0.70 nm (α-pinene) showed a decreasing enthalpy of immersion at a critical probe size (0.43-0.48 nm), followed by an increase at 0.48-0.56 nm, and a second decrease at 0.56-0.60 nm. This maximum has not been reported previously. After consideration of possible reasons for this new observation, it is concluded that the effect arises from molecular packing inside the micropores, interpreted in terms of 2D packing. The immersion enthalpy PSD was consistent with that from quenched solid density functional theory (QSDFT) analysis of the nitrogen adsorption isotherm. PMID:26394883

  5. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  6. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  7. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  8. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  9. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  10. Immersion mode ice nucleation measurements with the new Portable Immersion Mode Cooling chAmber (PIMCA)

    NASA Astrophysics Data System (ADS)

    Kohn, Monika; Lohmann, Ulrike; Welti, André; Kanji, Zamin A.

    2016-05-01

    The new Portable Immersion Mode Cooling chAmber (PIMCA) has been developed for online immersion freezing of single-immersed aerosol particles. PIMCA is a vertical extension of the established Portable Ice Nucleation Chamber (PINC). PIMCA immerses aerosol particles into cloud droplets before they enter PINC. Immersion freezing experiments on cloud droplets with a radius of 5-7 μm at a prescribed supercooled temperature (T) and water saturation can be conducted, while other ice nucleation mechanisms (deposition, condensation, and contact mode) are excluded. Validation experiments on reference aerosol (kaolinite, ammonium sulfate, and ammonium nitrate) showed good agreement with theory and literature. The PIMCA-PINC setup was tested in the field during the Zurich AMBient Immersion freezing Study (ZAMBIS) in spring 2014 in Zurich, Switzerland. Significant concentrations of submicron ambient aerosol triggering immersion freezing at T > 236 K were rare. The mean frozen cloud droplet number concentration was estimated to be 7.22·105 L-1 for T < 238 K and determined from the measured frozen fraction and cloud condensation nuclei (CCN) concentrations predicted for the site at a typical supersaturation of SS = 0.3%. This value should be considered as an upper limit of cloud droplet freezing via immersion and homogeneous freezing processes. The predicted ice nucleating particle (INP) concentration based on measured total aerosol larger than 0.5 μm and the parameterization by DeMott et al. (2010) at T = 238 K is INPD10=54 ± 39 L-1. This is a lower limit as supermicron particles were not sampled with PIMCA-PINC during ZAMBIS.

  11. Fabricating Blazed Diffraction Gratings by X-Ray Lithography

    NASA Technical Reports Server (NTRS)

    Mouroulis, Pantazis; Hartley, Frank; Wilson, Daniel

    2004-01-01

    Gray-scale x-ray lithography is undergoing development as a technique for fabricating blazed diffraction gratings. As such, gray-scale x-ray lithography now complements such other grating-fabrication techniques as mechanical ruling, holography, ion etching, laser ablation, laser writing, and electron-beam lithography. Each of these techniques offers advantages and disadvantages for implementing specific grating designs; no single one of these techniques can satisfy the design requirements for all applications. Gray-scale x-ray lithography is expected to be advantageous for making gratings on steeper substrates than those that can be made by electron-beam lithography. This technique is not limited to sawtooth groove profiles and flat substrates: various groove profiles can be generated on arbitrarily shaped (including highly curved) substrates with the same ease as sawtooth profiles can be generated on flat substrates. Moreover, the gratings fabricated by this technique can be made free of ghosts (spurious diffraction components attributable to small spurious periodicities in the locations of grooves). The first step in gray-scale x-ray lithography is to conformally coat a substrate with a suitable photoresist. An x-ray mask (see Figure 1) is generated, placed between the substrate and a source of collimated x-rays, and scanned over the substrate so as to create a spatial modulation in the exposure of the photoresist. Development of the exposed photoresist results in a surface corrugation that corresponds to the spatial modulation and that defines the grating surface. The grating pattern is generated by scanning an appropriately shaped x-ray area mask along the substrate. The mask example of Figure 1 would generate a blazed grating profile when scanned in the perpendicular direction at constant speed, assuming the photoresist responds linearly to incident radiation. If the resist response is nonlinear, then the mask shape can be modified to account for the

  12. A Hybrid Immersed Boundary-Immersed Interface Method for Cell Tracking in Microdevices

    NASA Astrophysics Data System (ADS)

    Hossan, Mohammad; Dutta, Prashanta; Dillon, Robert

    2011-11-01

    The manipulation of cells in microfluidic devices has become routine for biomedical applications such as cell sorting and trapping. To date most of the designs used for cell manipulation are based on experimental trial and error. A fast and accurate numerical algorithm can provide important insight into the design of these devices. In this study, a hybrid immersed boundary-immersed interface method is developed to study the complex behavior of cells in liquid. The immersed boundary method provides an accurate prediction of particle motion in a fluid while the immersed interface method gives second-order accurate solutions for the ion concentrations and electrostatic potential in the presence of moving cells. Both methods employ a fixed computational grid without the need for remeshing at each time step. Cells of different size, shape and charge are allowed to move under both hydrodynamic and electrokinetic forces. Moreover different channel geometries are considered to obtain the best trapping and separation performance. The present immersed boundary-immersed interface model is particularly suitable for bioMEMS devices as this method can accurately predict viscous and electrostatic forces as well as particle velocity, location, and particle membrane deflection.

  13. Reflective electron-beam lithography performance for the 10nm logic node

    NASA Astrophysics Data System (ADS)

    Freed, Regina; Gubiotti, Thomas; Sun, Jeff; Cheung, Anthony; Yang, Jason; McCord, Mark; Petric, Paul; Carroll, Allen; Ummethala, Upendra; Hale, Layton; Hench, John; Kojima, Shinichi; Mieher, Walter; Bevis, Chris F.

    2012-11-01

    Maskless electron beam lithography has the potential to extend semiconductor manufacturing to the sub-10 nm technology node. KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL) for high-volume 10 nm logic (16 nm HP). This paper reviews progress in the development of the REBL system towards its goal of 100 wph throughput for High Volume Lithography (HVL) at the 2X and 1X nm nodes. In this paper we introduce the Digital Pattern Generator (DPG) with integrated CMOS and MEMs lenslets that was manufactured at TSMC and IMEC. For REBL, the DPG is integrated to KLA-Tencor pattern generating software that can be programmed to produce complex, gray-scaled lithography patterns. Additionally, we show printing results for a range of interesting lithography patterns using Time Domain Imaging (TDI). Previously, KLA-Tencor reported on the development of a Reflective Electron Beam Lithography (REBL) tool for maskless lithography at and below the 22 nm technology node1. Since that time, the REBL team and its partners (TSMC, IMEC) have made good progress towards developing the REBL system and Digital Pattern Generator (DPG) for direct write lithography. Traditionally, e-beam direct write lithography has been too slow for most lithography applications. Ebeam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the continued uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for HVL.

  14. Advanced wavefront engineering for improved imaging and overlay applications on a 1.35 NA immersion scanner

    NASA Astrophysics Data System (ADS)

    Staals, Frank; Andryzhyieuskaya, Alena; Bakker, Hans; Beems, Marcel; Finders, Jo; Hollink, Thijs; Mulkens, Jan; Nachtwein, Angelique; Willekers, Rob; Engblom, Peter; Gruner, Toralf; Zhang, Youping

    2011-04-01

    In this paper we describe the basic principle of FlexWave, a new high resolution wavefront manipulator, and discuss experimental data on imaging, focus and overlay. For this we integrated the FlexWave module in a 1.35 NA immersion scanner. With FlexWave we can perform both static and dynamic wavefront corrections. Wavefront control with FlexWave minimizes lens aberrations under high productivity usage of the scanner, hence maintaining overlay and focus performance, but moreover, the high resolution wavefront tuning can be used to compensate for litho related effects. Especially now mask 3D effects are becoming a major error component, additional tuning is required. Optimized wavefront can be achieved with computational lithography, by either co-optimizing source, mask, and Wavefront Target prior to tape-out, or by tuning Wavefront Targets for specific masks and scanners after the reticle is made.

  15. 7 CFR 305.22 - Hot water immersion treatment schedules.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 5 2010-01-01 2010-01-01 false Hot water immersion treatment schedules. 305.22... Hot water immersion treatment schedules. (a) T102-d. (1) Fruit must be grown and treated in Hawaii. (2) Fruit must be submerged at least 4 inches below the water's surface in a hot water immersion...

  16. Immersive Training Systems: Virtual Reality and Education and Training.

    ERIC Educational Resources Information Center

    Psotka, Joseph

    1995-01-01

    Describes virtual reality (VR) technology and VR research on education and training. Focuses on immersion as the key added value of VR, analyzes cognitive variables connected to immersion, how it is generated in synthetic environments and its benefits. Discusses value of tracked, immersive visual displays over nonimmersive simulations. Contains 78…

  17. Two-Way Immersion: A Key to Global Awareness.

    ERIC Educational Resources Information Center

    Howard, Elizabeth R.

    2002-01-01

    Describes the use of two-way immersion education to provide students with opportunities to understand and appreciate other countries and cultures. The main features of two-way immersion education are bilingual language instruction, cross-cultural understanding, and international exchanges. Includes case study of two-way immersion at the Alicia…

  18. Swedish Immersion in the Early Years in Finland

    ERIC Educational Resources Information Center

    Björklund, Siv; Mård-Miettinen, Karita; Savijärvi, Marjo

    2014-01-01

    Immersion education in Finland is a one-way (monolingual) early total Swedish programme for Finnish-speaking students. This immersion provision is offered at kindergarten level (ages 3-5), at preschool (age 6) and at primary levels (grades 1-9). Here, a brief synthesis of Finnish research studies on the early years in Swedish immersion is first…

  19. English Immersion and Educational Inequality in South Korea

    ERIC Educational Resources Information Center

    Jeon, Mihyon

    2012-01-01

    This article explores what immersion English education means in South Korea (henceforth Korea) and examines various related educational practices. The proposal for English immersion from the Presidential Transition Committee of the Lee administration in early 2008 has highlighted immersion education in Korea. Ironically, since the committee's…

  20. Electrode immersion depth determination and control in electroslag remelting furnace

    DOEpatents

    Melgaard, David K.; Beaman, Joseph J.; Shelmidine, Gregory J.

    2007-02-20

    An apparatus and method for controlling an electroslag remelting furnace comprising adjusting electrode drive speed by an amount proportional to a difference between a metric of electrode immersion and a set point, monitoring impedance or voltage, and calculating the metric of electrode immersion depth based upon a predetermined characterization of electrode immersion depth as a function of impedance or voltage.

  1. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion...

  2. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion...

  3. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion...

  4. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion...

  5. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion...

  6. The Flostation - an Immersive Cyberspace System

    NASA Technical Reports Server (NTRS)

    Park, Brian

    2006-01-01

    A flostation is a computer-controlled apparatus that, along with one or more computer(s) and other computer-controlled equipment, is part of an immersive cyberspace system. The system is said to be immersive in two senses of the word: (1) It supports the body in a modified form neutral posture experienced in zero gravity and (2) it is equipped with computer-controlled display equipment that helps to give the occupant of the chair a feeling of immersion in an environment that the system is designed to simulate. Neutral immersion was conceived during the Gemini program as a means of training astronauts for working in a zerogravity environment. Current derivatives include neutral-buoyancy tanks and the KC-135 airplane, each of which mimics the effects of zero gravity. While these have performed well in simulating the shorter-duration flights typical of the space program to date, a training device that can take astronauts to the next level will be needed for simulating longer-duration flights such as that of the International Space Station. The flostation is expected to satisfy this need. The flostation could also be adapted and replicated for use in commercial ventures ranging from home entertainment to medical treatment. The use of neutral immersion in the flostation enables the occupant to recline in an optimal posture of rest and meditation. This posture, combines savasana (known to practitioners of yoga) and a modified form of the neutral posture assumed by astronauts in outer space. As the occupant relaxes, awareness of the physical body is reduced. The neutral body posture, which can be maintained for hours without discomfort, is extended to the eyes, ears, and hands. The occupant can be surrounded with a full-field-of-view visual display and nearphone sound, and can be stimulated with full-body vibration and motion cueing. Once fully immersed, the occupant can use neutral hand controllers (that is, hand-posture sensors) to control various aspects of the

  7. Immersive 3D geovisualisation in higher education

    NASA Astrophysics Data System (ADS)

    Philips, Andrea; Walz, Ariane; Bergner, Andreas; Graeff, Thomas; Heistermann, Maik; Kienzler, Sarah; Korup, Oliver; Lipp, Torsten; Schwanghart, Wolfgang; Zeilinger, Gerold

    2014-05-01

    Through geovisualisation we explore spatial data, we analyse it towards a specific questions, we synthesise results, and we present and communicate them to a specific audience (MacEachren & Kraak 1997). After centuries of paper maps, the means to represent and visualise our physical environment and its abstract qualities have changed dramatically since the 1990s - and accordingly the methods how to use geovisualisation in teaching. Whereas some people might still consider the traditional classroom as ideal setting for teaching and learning geographic relationships and its mapping, we used a 3D CAVE (computer-animated virtual environment) as environment for a problem-oriented learning project called "GEOSimulator". Focussing on this project, we empirically investigated, if such a technological advance like the CAVE make 3D visualisation, including 3D geovisualisation, not only an important tool for businesses (Abulrub et al. 2012) and for the public (Wissen et al. 2008), but also for educational purposes, for which it had hardly been used yet. The 3D CAVE is a three-sided visualisation platform, that allows for immersive and stereoscopic visualisation of observed and simulated spatial data. We examined the benefits of immersive 3D visualisation for geographic research and education and synthesized three fundamental technology-based visual aspects: First, the conception and comprehension of space and location does not need to be generated, but is instantaneously and intuitively present through stereoscopy. Second, optical immersion into virtual reality strengthens this spatial perception which is in particular important for complex 3D geometries. And third, a significant benefit is interactivity, which is enhanced through immersion and allows for multi-discursive and dynamic data exploration and knowledge transfer. Based on our problem-oriented learning project, which concentrates on a case study on flood risk management at the Wilde Weisseritz in Germany, a river

  8. Nanostructure patterning on flexible substrates using electron beam lithography

    NASA Astrophysics Data System (ADS)

    Nagaraj, K. S.; Sangeeth, K.; Hegde, G. M.

    2014-06-01

    Patterning nanostructures on flexible substrates plays a key role in the emerging flexible electronics technology. The flexible electronic devices are inexpensive and can be conformed to any shape. The potential applications for such devices are sensors, displays, solar cells, RFID, high-density biochips, optoelectronics etc. E-beam lithography is established as a powerful tool for nanoscale fabrication, but its applicability on insulating flexible substrates is often limited because of surface charging effects. This paper presents the fabrication of nanostructures on insulating flexible substrates using low energy E-beam lithography along with metallic layers for charge dissipation. Nano Structures are patterned on different substrates of materials such as acetate and PET foils. The fabrication process parameters such as the proximity gap of exposure, the exposure dosage and developing conditions have been optimized for each substrate.

  9. Metallic nanodot arrays by stencil lithography for plasmonic biosensing applications.

    PubMed

    Vazquez-Mena, Oscar; Sannomiya, Takumi; Villanueva, Luis G; Voros, Janos; Brugger, Juergen

    2011-02-22

    The fabrication of gold nanodots by stencil lithography and its application for optical biosensing based on localized surface plasmon resonance are presented. Arrays of 50-200 nm wide nanodots with different spacing of 50-300 nm are fabricated without any resist, etching, or lift-off process. The dimensions and morphology of the nanodots were characterized by scanning electron and atomic force microscopy. The fabricated nanodots showed localized surface plasmon resonance in their extinction spectra in the visible range. The resonance wavelength depends on the periodicity and dimensions of the nanodots. Bulk refractive index measurements and model biosensing of streptavidin were successfully performed based on the plasmon resonance shift induced by local refractive index change when biomolecules are adsorbed on the nanodots. These results demonstrate the potential of stencil lithography for the realization of plasmon-based biosensing devices. PMID:21192666

  10. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography

    NASA Astrophysics Data System (ADS)

    Tiddia, Mariavitalia; Mula, Guido; Sechi, Elisa; Vacca, Annalisa; Cara, Eleonora; De Leo, Natascia; Fretto, Matteo; Boarino, Luca

    2016-09-01

    In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown.

  11. XUV free-electron laser-based projection lithography systems

    SciTech Connect

    Newnam, B.E.

    1990-01-01

    Free-electron laser sources, driven by rf-linear accelerators, have the potential to operate in the extreme ultraviolet (XUV) spectral range with more than sufficient average power for high-volume projection lithography. For XUV wavelengths from 100 nm to 4 nm, such sources will enable the resolution limit of optical projection lithography to be extended from 0.25 {mu}m to 0.05{mu}m and with an adequate total depth of focus (1 to 2 {mu}m). Recent developments of a photoinjector of very bright electron beams, high-precision magnetic undulators, and ring-resonator cavities raise our confidence that FEL operation below 100 nm is ready for prototype demonstration. We address the motivation for an XUV FEL source for commercial microcircuit production and its integration into a lithographic system, include reflecting reduction masks, reflecting XUV projection optics and alignment systems, and surface-imaging photoresists. 52 refs., 7 figs.

  12. Controlled Fabrication of Si Nanowires with Nanodots Using Nanosphere Lithography.

    PubMed

    Li, Wei; Wang, Shaolei; He, Sufeng; Hu, Mingyue; Ge, Pengpeng; Wang, Jing; Guo, YanYan

    2016-02-01

    In this paper, we introduce an easy method for fabricating Si nanowires with nanodots using nanosphere lithography. First, a self-assembly ordered single layer of polystyrene nanospheres with a diameter of 220 nm was prepared on Si substrate. Secondly, the polystyrene spheres monolayer was etched by 02 with different time from 10 s to 35 s. After this etching process, the polystyrene nanowires between polystyrene spheres were fabrication. If the etching time was longer than 35 s, there were no polystyrene nanowires. Thereafter, the following etching process with carbon fluoride was performanced. The polystyrene nanowires and nanosphers were worked as masks. Finally, the Si nanowires with nanodots were formed. The size and morphology can be controlled by etching process. This technique for forming nanostructure arrays using nanosphere lithography can be applied in many areas of science and technology.

  13. Rapid soft lithography by bottom-up enhanced capillarity.

    PubMed

    Pisignano, Dario; Di Benedetto, Francesca; Persano, Luana; Gigli, Giuseppe; Cingolani, Roberto

    2004-06-01

    The growing demand for new solutions to pursue the trend of micro- and nanoelectronics predicted by Moore's law is stimulating the development of new high-resolution, low-cost lithographies. Here we demonstrate that several bottom-up approaches can be used to increase the throughput of soft lithography by exploiting the enhanced hydrophilicity, the low viscosity, and the fragility of the employed materials. In particular, the customized functionalization of the involved surfaces to improve the wettability to polymer fluids and the dramatic decrease of the viscosity of polymer compounds as the temperature is increased, together with the good thermal stability of the functionalized surfaces, allow a faster filling of elastomeric channels, up to almost an order of magnitude with respect to conventional microfluidics.

  14. Super-resolved optical lithography with phase controlled source

    NASA Astrophysics Data System (ADS)

    Hong, Peilong; Zhang, Guoquan

    2015-05-01

    Recently, we have demonstrated that second-order subwavelength interference could be realized in an optical lithography scheme with an effective entangled source [P. Hong and G. Zhang, Phys. Rev. A 88, 043838 (2013), 10.1103/PhysRevA.88.043838]. In this paper, by considering the correlation function in both the source plane and observation plane, we show how the coherence property of such a source is controlled via introduction of random-phase correlation, which finally affects the two-photon interference effect observed in the far-field plane. Furthermore, by introducing different but similar random-phase correlations, we generalize the phase controlled source with particular high-order coherence properties to obtain higher-order subwavelength interference, i.e., high-order super-resolved optical lithography. These results show the importance of phase control in generating a light field with particular high-order coherence properties.

  15. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography.

    PubMed

    Tiddia, Mariavitalia; Mula, Guido; Sechi, Elisa; Vacca, Annalisa; Cara, Eleonora; De Leo, Natascia; Fretto, Matteo; Boarino, Luca

    2016-12-01

    In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown. PMID:27686091

  16. Etched-multilayer phase shifting masks for EUV lithography

    DOEpatents

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  17. Design and fabrication of diverse metamaterial structures by holographic lithography.

    PubMed

    Yang, Yi; Li, Qiuze; Wang, Guo Ping

    2008-07-21

    We demonstrate a holographic lithography for the fabrication of diverse metamaterial structures by using an optical prism. Cylindrical nanoshells, U-shaped resonator arrays, and double-split ring arrays are obtained experimentally by real time modulating the phase relation of the interference beams. This easy-to-use method may provide a roadway for the design and fabrication of future metamaterials requiring diverse structures for effectively manipulating electromagnetic properties at optical frequencies. PMID:18648445

  18. 3D nanostructures fabricated by advanced stencil lithography

    NASA Astrophysics Data System (ADS)

    Yesilkoy, F.; Flauraud, V.; Rüegg, M.; Kim, B. J.; Brugger, J.

    2016-02-01

    This letter reports on a novel fabrication method for 3D metal nanostructures using high-throughput nanostencil lithography. Aperture clogging, which occurs on the stencil membranes during physical vapor deposition, is leveraged to create complex topographies on the nanoscale. The precision of the 3D nanofabrication method is studied in terms of geometric parameters and material types. The versatility of the technique is demonstrated by various symmetric and chiral patterns made of Al and Au.

  19. 3D nanostructures fabricated by advanced stencil lithography.

    PubMed

    Yesilkoy, F; Flauraud, V; Rüegg, M; Kim, B J; Brugger, J

    2016-03-01

    This letter reports on a novel fabrication method for 3D metal nanostructures using high-throughput nanostencil lithography. Aperture clogging, which occurs on the stencil membranes during physical vapor deposition, is leveraged to create complex topographies on the nanoscale. The precision of the 3D nanofabrication method is studied in terms of geometric parameters and material types. The versatility of the technique is demonstrated by various symmetric and chiral patterns made of Al and Au. PMID:26884085

  20. 450mm wafer patterning with jet and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

    2013-09-01

    The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

  1. Fabrication of Micro Lens Array by UV-LED Lithography

    NASA Astrophysics Data System (ADS)

    Iguchi, Yusuke; Matsumoto, Yoshinori

    High curvature micro lens array of 240-570 μm diameters and 110-270 μm heights has been fabricated by using UV-LED lithography and imprinting technique. Curved SU-8 structures were fabricated by backside exposure through thin glass substrate because UV-LED array light source has wide directivity characteristics of UV dose. The structure was transferred to Polydimethylsiloxsane (PDMS) mold. Micro lens array of photosensitive acrylic resin was fabricated by using the mold.

  2. Maskless micro-ion-beam reduction lithography system

    DOEpatents

    Leung, Ka-Ngo; Barletta, William A.; Patterson, David O.; Gough, Richard A.

    2005-05-03

    A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

  3. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  4. Large-Area Zone Plate Fabrication with Optical Lithography

    SciTech Connect

    Denbeaux, G.

    2011-09-09

    Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/{Delta}E = 700[1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/{Delta}E = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

  5. Considerations for cost of ownership in EUV lithography

    NASA Astrophysics Data System (ADS)

    Keen, Anthony; Bailey, Christopher; Donders, Jos; Condon, Neil

    2011-04-01

    The cost of ownership of semiconductor manufacturing equipment is typically addressed in terms of raw utility consumption. Focusing on energy, the average consumption of a typical semiconductor fabrication plant has doubled over a recent 10 year period, with approximately 30% of this energy currently attributed to vacuum equipment. Compared to conventional optical lithography, extreme ultraviolet lithography (EUVL) requires the adoption of a vacuum subsystem to enable the technology, bringing an additional vacuum requirement to semiconductor fabs. With this trend it is increasingly important to focus on more efficient ways of operating semiconductor manufacturing tools and their supporting equipment. Clever operation through employment of 'GREEN' modes can provide significant utility savings. However, in semiconductor lithography, tool uptime is a critical parameter to be considered in any cost of ownership model, and the facility vacuum equipment plays an intimate role here, so including redundancy in pumping equipment can be a key enabler to maintaining tool uptime. Consequently optimizing the design of the vacuum subsystem will help to reduce the overall footprint, utility consumption and energy costs associated with this process.

  6. Advanced metrology for the 14 nm node double patterning lithography

    NASA Astrophysics Data System (ADS)

    Carau, D.; Bouyssou, R.; Dezauzier, C.; Besacier, M.; Gourgon, C.

    2014-05-01

    In microelectronics the two crucial parameters for the lithography step are the critical dimension, which is the width of the smallest printable pattern, and the misalignment error of the reticle, called overlay. For the 14 nm node, the limit of scanner resolution can be overcome by the double patterning technique, which requires a maximum overlay error between the two reticles of 3 nm [1]. The current approach in the measurements of critical dimension and overlay is to treat them separately, but it has become much more complex in the double patterning context, since they are no longer independent. In this paper, a strategy of a common measurement is developed. The aim of the strategy is to measure simultaneously overlay and critical dimension in the metal level double patterning grating before the second etch process. The scatterometry technique is well known for critical dimension measurement. This study demonstrates that the overlay between the two gratings can also be deduced. Thanks to this original scatterometry-based method, it becomes possible to provide information on the lithography step quality before the second etch process; therefore the lithography can be reworked if it is necessary.

  7. Large-Area Zone Plate Fabrication with Optical Lithography

    NASA Astrophysics Data System (ADS)

    Denbeaux, G.

    2011-09-01

    Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/ΔE = 700 [1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/ΔE = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

  8. Fabrication of 70nm split ring resonators by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Sharp, Graham J.; Khokhar, Ali Z.; Johnson, Nigel P.

    2012-05-01

    We report on the fabrication of 70 nm wide, high resolution rectangular U-shaped split ring resonators (SRRs) using nanoimprint lithography (NIL). The fabrication method for the nanoimprint stamp does not require dry etching. The stamp is used to pattern SRRs in a thin PMMA layer followed by metal deposition and lift-off. Nanoimprinting in this way allows high resolution patterns with a minimum feature size of 20 nm. This fabrication technique yields a much higher throughput than conventional e-beam lithography and each stamp can be used numerous times to imprint patterns. Reflectance measurements of fabricated aluminium SRRs on silicon substrates show a so-called an LC resonance peak in the visible spectrum under transverse electric polarisation. Fabricating the SRRs by NIL rather than electron beam lithography allows them to be scaled to smaller dimensions without any significant loss in resolution, partly because pattern expansion caused by backscattered electrons and the proximity effect are not present with NIL. This in turn helps to shift the magnetic response to short wavelengths while still retaining a distinct LC peak.

  9. Optical Lithography on non-flat surfaces; A Case Study

    NASA Astrophysics Data System (ADS)

    Moore, Clayton; Newton, Conrad; Geerts, Wilhelmus; Palmer, Daniel; Tamir, Dan

    2008-10-01

    Only a few studies of optical lithography on non-flat substrates have been reported. Most of these systems only work on polished very well defined substrates. For example, Ball Semiconductor developed a system for projection lithography on polished spherical balls of 1 mm diameter. We propose a system that works on an arbitrary surface and enables lithography on a wide variety of substrates including the wings of insects or a single crystalline grain of a ceramic sample. The system consists of a computer controlled laser beam that is focused through an optical microscope on an XY-table. The size of the beam can be changed by varying the size of the aperture or the change of the objective. The focus of the microscope can be automatically adjusted enabling to follow the 3D profile of the sample's surface. The laser intensity is automatically adjusted to keep the dose constant as the samples profile and the speed of the xy-table very. A cross-compiler, which utilizes principles of computer graphics to figure the required exposure parameters based on the surface of the object was developed. It accepts a text file, a vector based graphic file, or a raster image and generates a file with instructions for the laser beam writer.

  10. Inverse Tomo-Lithography for Making Microscopic 3D Parts

    NASA Technical Reports Server (NTRS)

    White, Victor; Wiberg, Dean

    2003-01-01

    According to a proposal, basic x-ray lithography would be extended to incorporate a technique, called inverse tomography, that would enable the fabrication of microscopic three-dimensional (3D) objects. The proposed inverse tomo-lithographic process would make it possible to produce complex shaped, submillimeter-sized parts that would be difficult or impossible to make in any other way. Examples of such shapes or parts include tapered helices, paraboloids with axes of different lengths, and even Archimedean screws that could serve as rotors in microturbines. The proposed inverse tomo-lithographic process would be based partly on a prior microfabrication process known by the German acronym LIGA (lithographie, galvanoformung, abformung, which means lithography, electroforming, molding). In LIGA, one generates a precise, high-aspect ratio pattern by exposing a thick, x-ray-sensitive resist material to an x-ray beam through a mask that contains the pattern. One can electrodeposit metal into the developed resist pattern to form a precise metal part, then dissolve the resist to free the metal. Aspect ratios of 100:1 and patterns into resist thicknesses of several millimeters are possible.

  11. Low Cost Lithography Tool for High Brightness LED Manufacturing

    SciTech Connect

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  12. The use of EUV lithography to produce demonstration devices

    NASA Astrophysics Data System (ADS)

    LaFontaine, Bruno; Deng, Yunfei; Kim, Ryoung-Han; Levinson, Harry J.; McGowan, Sarah; Okoroanyanwu, Uzodinma; Seltmann, Rolf; Tabery, Cyrus; Tchikoulaeva, Anna; Wallow, Tom; Wood, Obert; Arnold, John; Canaperi, Don; Colburn, Matthew; Kimmel, Kurt; Koay, Chiew-Seng; Mclellan, Erin; Medeiros, Dave; Rao, Satyavolu Papa; Petrillo, Karen; Yin, Yunpeng; Mizuno, Hiroyuki; Bouten, Sander; Crouse, Michael; van Dijk, Andre; van Dommelen, Youri; Galloway, Judy; Han, Sang-In; Kessels, Bart; Lee, Brian; Lok, Sjoerd; Niekrewicz, Brian; Pierson, Bill; Routh, Robert; Schmit-Weaver, Emil; Cummings, Kevin; Word, James

    2008-03-01

    In this paper, we describe the integration of EUV lithography into a standard semiconductor manufacturing flow to produce demonstration devices. 45 nm logic test chips with functional transistors were fabricated using EUV lithography to pattern the first interconnect level (metal 1). This device fabrication exercise required the development of rule-based 'OPC' to correct for flare and mask shadowing effects. These corrections were applied to the fabrication of a full-field mask. The resulting mask and the 0.25-NA fullfield EUV scanner were found to provide more than adequate performance for this 45 nm logic node demonstration. The CD uniformity across the field and through a lot of wafers was 6.6% (3σ) and the measured overlay on the test-chip (product) wafers was well below 20 nm (mean + 3σ). A resist process was developed and performed well at a sensitivity of 3.8 mJ/cm2, providing ample process latitude and etch selectivity for pattern transfer. The etch recipes provided good CD control, profiles and end-point discrimination, allowing for good electrical connection to the underlying levels, as evidenced by electrical test results. Many transistors connected with Cu-metal lines defined using EUV lithography were tested electrically and found to have characteristics very similar to 45 nm node transistors fabricated using more traditional methods.

  13. An Immersive VR System for Sports Education

    NASA Astrophysics Data System (ADS)

    Song, Peng; Xu, Shuhong; Fong, Wee Teck; Chin, Ching Ling; Chua, Gim Guan; Huang, Zhiyong

    The development of new technologies has undoubtedly promoted the advances of modern education, among which Virtual Reality (VR) technologies have made the education more visually accessible for students. However, classroom education has been the focus of VR applications whereas not much research has been done in promoting sports education using VR technologies. In this paper, an immersive VR system is designed and implemented to create a more intuitive and visual way of teaching tennis. A scalable system architecture is proposed in addition to the hardware setup layout, which can be used for various immersive interactive applications such as architecture walkthroughs, military training simulations, other sports game simulations, interactive theaters, and telepresent exhibitions. Realistic interaction experience is achieved through accurate and robust hybrid tracking technology, while the virtual human opponent is animated in real time using shader-based skin deformation. Potential future extensions are also discussed to improve the teaching/learning experience.

  14. Immersive volume rendering of blood vessels

    NASA Astrophysics Data System (ADS)

    Long, Gregory; Kim, Han Suk; Marsden, Alison; Bazilevs, Yuri; Schulze, Jürgen P.

    2012-03-01

    In this paper, we present a novel method of visualizing flow in blood vessels. Our approach reads unstructured tetrahedral data, resamples it, and uses slice based 3D texture volume rendering. Due to the sparse structure of blood vessels, we utilize an octree to efficiently store the resampled data by discarding empty regions of the volume. We use animation to convey time series data, wireframe surface to give structure, and utilize the StarCAVE, a 3D virtual reality environment, to add a fully immersive element to the visualization. Our tool has great value in interdisciplinary work, helping scientists collaborate with clinicians, by improving the understanding of blood flow simulations. Full immersion in the flow field allows for a more intuitive understanding of the flow phenomena, and can be a great help to medical experts for treatment planning.

  15. Immersed Boundary Simulations of Active Fluid Droplets

    PubMed Central

    Hawkins, Rhoda J.

    2016-01-01

    We present numerical simulations of active fluid droplets immersed in an external fluid in 2-dimensions using an Immersed Boundary method to simulate the fluid droplet interface as a Lagrangian mesh. We present results from two example systems, firstly an active isotropic fluid boundary consisting of particles that can bind and unbind from the interface and generate surface tension gradients through active contractility. Secondly, a droplet filled with an active polar fluid with homeotropic anchoring at the droplet interface. These two systems demonstrate spontaneous symmetry breaking and steady state dynamics resembling cell motility and division and show complex feedback mechanisms with minimal degrees of freedom. The simulations outlined here will be useful for quantifying the wide range of dynamics observable in these active systems and modelling the effects of confinement in a consistent and adaptable way. PMID:27606609

  16. Immersed Boundary Simulations of Active Fluid Droplets.

    PubMed

    Whitfield, Carl A; Hawkins, Rhoda J

    2016-01-01

    We present numerical simulations of active fluid droplets immersed in an external fluid in 2-dimensions using an Immersed Boundary method to simulate the fluid droplet interface as a Lagrangian mesh. We present results from two example systems, firstly an active isotropic fluid boundary consisting of particles that can bind and unbind from the interface and generate surface tension gradients through active contractility. Secondly, a droplet filled with an active polar fluid with homeotropic anchoring at the droplet interface. These two systems demonstrate spontaneous symmetry breaking and steady state dynamics resembling cell motility and division and show complex feedback mechanisms with minimal degrees of freedom. The simulations outlined here will be useful for quantifying the wide range of dynamics observable in these active systems and modelling the effects of confinement in a consistent and adaptable way. PMID:27606609

  17. Immersed molecular electrokinetic finite element method

    NASA Astrophysics Data System (ADS)

    Kopacz, Adrian M.; Liu, Wing K.

    2013-07-01

    A unique simulation technique has been developed capable of modeling electric field induced detection of biomolecules such as viruses, at room temperatures where thermal fluctuations must be considered. The proposed immersed molecular electrokinetic finite element method couples electrokinetics with fluctuating hydrodynamics to study the motion and deformation of flexible objects immersed in a suspending medium under an applied electric field. The force induced on an arbitrary object due to an electric field is calculated based on the continuum electromechanics and the Maxwell stress tensor. The thermal fluctuations are included in the Navier-Stokes fluid equations via the stochastic stress tensor. Dielectrophoretic and fluctuating forces acting on the particle are coupled through the fluid-structure interaction force calculated within the surrounding environment. This method was used to perform concentration and retention efficacy analysis of nanoscale biosensors using gold particles of various sizes. The analysis was also applied to a human papillomavirus.

  18. Immersion pulmonary oedema and Takotsubo cardiomyopathy.

    PubMed

    Ng, Andrew; Edmonds, Carl

    2015-12-01

    A 67-year-old female scuba diver developed a typical immersion pulmonary oedema (IPE), but investigations strongly indicated Takotsubo cardiomyopathy (TC). The cardiac abnormalities included increased cardiac enzymes, electrocardiographic anomalies and echocardiographic changes, all reverting to normal within days. This case demonstrates a similarity and association between IPE and TC, and the importance of prompt cardiac investigations both in the investigation of IPE and in making the diagnosis of TC. PMID:26687314

  19. Decoupling, situated cognition and immersion in art.

    PubMed

    Reboul, Anne

    2015-09-01

    Situated cognition seems incompatible with strong decoupling, where representations are deployed in the absence of their targets and are not oriented toward physical action. Yet, in art consumption, the epitome of a strongly decoupled cognitive process, the artwork is a physical part of the environment and partly controls the perception of its target by the audience, leading to immersion. Hence, art consumption combines strong decoupling with situated cognition.

  20. Liquid immersion apparatus for minute articles

    NASA Technical Reports Server (NTRS)

    Belcher, J. G., Jr.; Hollis, B. R., Jr. (Inventor)

    1981-01-01

    Apparatus is disclosed for immersing minute integrated circuit chips in an etching solution in manufacturing integrated circuits during research and development. The apparatus includes a holder, having a handle and basket support for carrying a removable unitary basket and lid structure where fluid flow-through passages are formed, and wherein graduated openings in the handle provide for adjustably supporting the basket in a breaker at a desired level.

  1. Immersion pulmonary oedema and Takotsubo cardiomyopathy.

    PubMed

    Ng, Andrew; Edmonds, Carl

    2015-12-01

    A 67-year-old female scuba diver developed a typical immersion pulmonary oedema (IPE), but investigations strongly indicated Takotsubo cardiomyopathy (TC). The cardiac abnormalities included increased cardiac enzymes, electrocardiographic anomalies and echocardiographic changes, all reverting to normal within days. This case demonstrates a similarity and association between IPE and TC, and the importance of prompt cardiac investigations both in the investigation of IPE and in making the diagnosis of TC.

  2. Compact reflective imaging spectrometer utilizing immersed gratings

    DOEpatents

    Chrisp, Michael P.

    2006-05-09

    A compact imaging spectrometer comprising an entrance slit for directing light, a first mirror that receives said light and reflects said light, an immersive diffraction grating that diffracts said light, a second mirror that focuses said light, and a detector array that receives said focused light. The compact imaging spectrometer can be utilized for remote sensing imaging spectrometers where size and weight are of primary importance.

  3. Respiratory drive during sudden cold water immersion.

    PubMed

    Mekjavić, I B; La Prairie, A; Burke, W; Lindborg, B

    1987-10-01

    Sudden decreases in cutaneous temperature induce an immediate ventilatory response, which has been termed the inspiratory or 'gasp' reflex. This respiratory response has been implicated as a contributing factor to cold water immersion drowning. In the present study, five subjects wearing either shorts or a variety of thermal protective apparel were immersed on separate occasions in 10 degrees C water. The observed peak mean skin temperature cooling rates (dTs/dt) for the different conditions varied from 6.9 +/- 2.1 degrees C/min for the shorts condition to 1.8 +/- 0.3 degrees C/min for a helicopter pilot suit made of cotton ventile material. During the immersion, recordings were made of respiratory drive, as indicated by the mouth occlusion pressure at 100 msec following the onset of inspiration (P0.1). The respiratory drive, an indicator of central inspiratory activity, correlated well with peak dTs/dt. The slope P0.1/(dTs/dt) was subject dependent and did not appear to be related to body composition. The substantial intersubject variability in the respiratory response is suggested to result from differences in the central integration of thermoafferent information. It is concluded that the inspiratory reflex is the result of cutaneous thermoreceptor activity. PMID:3659607

  4. Testing and analysis of immersed heat exchangers

    SciTech Connect

    Farrington, R.B.; Bingham, C.E.

    1986-08-01

    The objectives were to determine the performance of four immersed, ''supply-side'' heat exchangers used in solar domestic-hot-water systems; to examine the effects of flow rate, temperature difference, and coil configuration on performance; and to develop a simple model to predict the performance of immersed heat exchangers. We tested four immersed heat exchangers: a smooth coil, a finned spiral, a single-wall bayonet, and a double-wall bayonet. We developed two analyticl models and a simple finite difference model. We experimentally verified that the performance of these heat exchangers depends on the flow rate through them; we also showed that the temperature difference between the heat exchanger's inlet and the storage tank can strongly affect a heat exchanger's performance. We also compared the effects of the heat exchanger's configuration and correlated Nusselt and Rayleigh numbers for each heat exchanger tested. The smooth coil had a higher effectiveness than the others, while the double-wall bayonet had a very low effectiveness. We still do not know the long-term effectiveness of heat exchangers regarding scale accumulation, nor do we know the effects of very low flow rates on a heat exchanger's performance.

  5. Hypervolemia and plasma vasopressin response during water immersion in men

    NASA Technical Reports Server (NTRS)

    Greenleaf, J. E.; Morse, J. T.; Barnes, P. R.; Silver, J.; Keil, L. C.

    1983-01-01

    Immersion studies were performed on seven mildly dehydrated male subjects to examine the effect of suppression of plasma vasopressin (PVP) on diuresis in water immersion. The water was kept at close to 34.5 C and the subjects remained in the water for 4 hr after sitting for 2 hr. Na and K levels in the serum and urine were analyzed, as were osmolality, red blood cell count, renin activity, total protein, albumin amounts, hematocrit, and hemoglobin. Plasma volume was monitored from samples drawn at specified intervals during immersion. The plasma volume increased significantly 30 min after immersion, but no PVP was observed. The dehydration induced elevated serum osmotic concentrations. It is concluded that the hydration condition before immersion and the volume of fluid intake during immersion affects the hemodilution during immersion.

  6. Double exposure technology for KrF lithography

    NASA Astrophysics Data System (ADS)

    Geisler, S.; Bauer, J.; Haak, U.; Stolarek, D.; Schulz, K.; Wolf, H.; Meier, W.; Trojahn, M.; Matthus, E.; Beyer, H.; Old, G.; Marschmeyer, St.; Kuck, B.

    2008-04-01

    The application of Double Exposure Lithography (DEL) would enlarge the capability of 248 nm exposure technique to smaller pitch. We will use the DEL for the integration of critical layers for dedicated applications requiring resolution enhancement into 0.13 μm BiCMOS technology. In this paper we present the overlay precision and the focus difference of 1st and 2nd exposure as critical parameters of the DEL for k I <= 0.3 lithography (100 nm half pitch) with binary masks (BIM). The realization of excellent overlay (OVL) accuracy is a main key of double exposure and double patterning techniques. We show the DEL requires primarily a good mask registration, when the wafer stays in the scanner for both exposures without alignment between 1st and 2nd exposure. The exposure tool overlay error is more a practical limit for double patterning lithography (DPL). Hence we prefer the DEL for the resolution enhancement, especially if we use the KrF high NA lithography tool for 130 nm generation. Experimental and simulated results show that the critical dimension uniformity (CDU) depends strongly on the overlay precision. The DEL results show CDU is not only affected by the OVL but also by an optical proximity effect of 1st and 2nd exposure and the mask registration. The CD uniformity of DEL demands a low focus difference between 1st and 2nd exposure and therefore requires a good focus repeatability of the exposure tool. The Depth of Focus (DOF) of 490 nm at stable CD of lines was achieved for DEL. If we change the focus of one of the exposures the CD-focus performance of spaces was reduced with simultaneous line position changing. CDU vs. focus difference between 1st and 2nd exposure demands a focus repeatability <100 nm for the exposure tool. Summary, the results show DEL has the potential to be a practical lithography enhancement method for device fabrication using high NA KrF tool generation.

  7. Learning Relative Motion Concepts in Immersive and Non-immersive Virtual Environments

    NASA Astrophysics Data System (ADS)

    Kozhevnikov, Michael; Gurlitt, Johannes; Kozhevnikov, Maria

    2013-12-01

    The focus of the current study is to understand which unique features of an immersive virtual reality environment have the potential to improve learning relative motion concepts. Thirty-seven undergraduate students learned relative motion concepts using computer simulation either in immersive virtual environment (IVE) or non-immersive desktop virtual environment (DVE) conditions. Our results show that after the simulation activities, both IVE and DVE groups exhibited a significant shift toward a scientific understanding in their conceptual models and epistemological beliefs about the nature of relative motion, and also a significant improvement on relative motion problem-solving tests. In addition, we analyzed students' performance on one-dimensional and two-dimensional questions in the relative motion problem-solving test separately and found that after training in the simulation, the IVE group performed significantly better than the DVE group on solving two-dimensional relative motion problems. We suggest that egocentric encoding of the scene in IVE (where the learner constitutes a part of a scene they are immersed in), as compared to allocentric encoding on a computer screen in DVE (where the learner is looking at the scene from "outside"), is more beneficial than DVE for studying more complex (two-dimensional) relative motion problems. Overall, our findings suggest that such aspects of virtual realities as immersivity, first-hand experience, and the possibility of changing different frames of reference can facilitate understanding abstract scientific phenomena and help in displacing intuitive misconceptions with more accurate mental models.

  8. Lithography alternatives meet design style reality: How do they "line" up?

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.

    2016-03-01

    Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to

  9. 3DIVS: 3-Dimensional Immersive Virtual Sculpting

    SciTech Connect

    Kuester, F; Duchaineau, M A; Hamann, B; Joy, K I; Uva, A E

    2001-10-03

    Virtual Environments (VEs) have the potential to revolutionize traditional product design by enabling the transition from conventional CAD to fully digital product development. The presented prototype system targets closing the ''digital gap'' as introduced by the need for physical models such as clay models or mockups in the traditional product design and evaluation cycle. We describe a design environment that provides an intuitive human-machine interface for the creation and manipulation of three-dimensional (3D) models in a semi-immersive design space, focusing on ease of use and increased productivity for both designer and CAD engineers.

  10. Cavitation Inception in Immersed Jet Shear Flows

    NASA Astrophysics Data System (ADS)

    Lockett, R. D.; Ndamuso, N.; Price, R.

    2015-12-01

    Cavitation inception occurring in immersed jets was investigated in a purpose-built mechanical flow rig. The rig utilized custom-built cylindrical and conical nozzles to direct high-velocity jets of variable concentration n-octane-hexadecane mixtures into a fused silica optically accessible receiver. The fluid pressure upstream and down-stream of the nozzles were manually controlled. The study employed a variety of acrylic and metal nozzles. The results show that the critical upstream pressure to downstream pressure ratio for incipient cavitation decreases with increasing n-octane concentration for the cylindrical nozzles, and increases with increasing n-octane concentration for the conical nozzle.

  11. Double-Sided Opportunities Using Chemical Lift-Off Lithography.

    PubMed

    Andrews, Anne M; Liao, Wei-Ssu; Weiss, Paul S

    2016-08-16

    We discuss the origins, motivation, invention, development, applications, and future of chemical lift-off lithography, in which a specified pattern of a self-assembled monolayer is removed, i.e., lifted off, using a reactive, patterned stamp that is brought into contact with the monolayer. For Au substrates, this process produces a supported, patterned monolayer of Au on the stamp in addition to the negative pattern in the original molecular monolayer. Both the patterned molecular monolayer on the original substrate and the patterned supported metal monolayer on the stamp are useful as materials and for further applications in sensing and other areas. Chemical lift-off lithography effectively lowers the barriers to and costs of high-resolution, large-area nanopatterning. On the patterned monolayer side, features in the single-nanometer range can be produced across large (square millimeter or larger) areas. Patterns smaller than the original stamp feature sizes can be produced by controlling the degree of contact between the stamp and the lifted-off monolayer. We note that this process is different than conventional lift-off processes in lithography in that chemical lift-off lithography removes material, whereas conventional lift-off is a positive-tone patterning method. Chemical lift-off lithography is in some ways similar to microtransfer printing. Chemical lift-off lithography has critical advantages in the preparation of biocapture surfaces because the molecules left behind are exploited to space and to orient functional(ized) molecules. On the supported metal monolayer side, a new two-dimensional material has been produced. The useful important chemical properties of Au (vis-à-vis functionalization with thiols) are retained, but the electronic and optical properties of bulk Au or even Au nanoparticles are not. These metal monolayers do not quench excitation and may be useful in optical measurements, particularly in combination with selective binding due to

  12. Double-Sided Opportunities Using Chemical Lift-Off Lithography.

    PubMed

    Andrews, Anne M; Liao, Wei-Ssu; Weiss, Paul S

    2016-08-16

    We discuss the origins, motivation, invention, development, applications, and future of chemical lift-off lithography, in which a specified pattern of a self-assembled monolayer is removed, i.e., lifted off, using a reactive, patterned stamp that is brought into contact with the monolayer. For Au substrates, this process produces a supported, patterned monolayer of Au on the stamp in addition to the negative pattern in the original molecular monolayer. Both the patterned molecular monolayer on the original substrate and the patterned supported metal monolayer on the stamp are useful as materials and for further applications in sensing and other areas. Chemical lift-off lithography effectively lowers the barriers to and costs of high-resolution, large-area nanopatterning. On the patterned monolayer side, features in the single-nanometer range can be produced across large (square millimeter or larger) areas. Patterns smaller than the original stamp feature sizes can be produced by controlling the degree of contact between the stamp and the lifted-off monolayer. We note that this process is different than conventional lift-off processes in lithography in that chemical lift-off lithography removes material, whereas conventional lift-off is a positive-tone patterning method. Chemical lift-off lithography is in some ways similar to microtransfer printing. Chemical lift-off lithography has critical advantages in the preparation of biocapture surfaces because the molecules left behind are exploited to space and to orient functional(ized) molecules. On the supported metal monolayer side, a new two-dimensional material has been produced. The useful important chemical properties of Au (vis-à-vis functionalization with thiols) are retained, but the electronic and optical properties of bulk Au or even Au nanoparticles are not. These metal monolayers do not quench excitation and may be useful in optical measurements, particularly in combination with selective binding due to

  13. Application of SMIF isolation to lithography processes for contamination control

    NASA Astrophysics Data System (ADS)

    Zhu, Sheng-Bai

    2001-08-01

    Contamination control is particularly important in lithography processes because pattern defects are converted to wafers after each exposure. Contamination, by definition, is undesired matter or energy, which causes product defects or process instabilities, and, consequently, reduces yield and reliability. In lithography processes, particles, condensable hydrocarbosn, base molecules, moisture, and static electricity are examples of contaminants. Particles are inert minute objects, which interfere with the proper formation of circuit features. Condensable hydrocarbosn may cause optics hazing which reduces image homogeneity and energy transmission. Some Chemically Amplified Resists (CAR) are susceptible to molecular base contamination, resulting in image degradation such as T-topping. Moisture can affect the characteristics of photoresist, destabilizing photo-exposure and development processes. In combination with water, amine containing photoresist strippers can form hydroxyl ions that can attack aluminum and aluminum-copper alloys. Charged surfaces can tract and hold contaminants of opposite polarity. In case the electrical field exceeds the dielectric strength, ESD event occurs, often accompanied with damage of reticles, masks, or wafer circuits. With SMIF isolation technologies, yield loss due to defects and/or instabilities is minimized. Reticles, masks, and wafers are isolated form contamination sources through hermetic seal, in conjunction with particle/chemical filtration, and static shielding. Pressurization, inert gas purge, chemical absorbents, and electric grounding or air ionization are techniques of removing contaminants from the critical areas. For best performance, adequate selection of construction materials is critical. This paper discusses impacts of contamination on lithography processes and the possibility of solving such problems using SMIF isolation techniques. Theoretical models are developed and experimental data are presented.

  14. Inspection of imprint lithography patterns for semiconductor and patterned media

    NASA Astrophysics Data System (ADS)

    Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

    2010-03-01

    Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

  15. Step and flash imprint lithography for sub-100-nm patterning

    NASA Astrophysics Data System (ADS)

    Colburn, Matthew; Grot, Annette; Amistoso, Marie N.; Choi, Byung J.; Bailey, Todd C.; Ekerdt, John G.; Sreenivasan, S. V.; Hollenhorst, James; Willson, C. Grant

    2000-07-01

    Step and Flash Imprint Lithography (SFIL) is an alternative to photolithography that efficiently generates high aspect-ratio, sub-micron patterns in resist materials. Other imprint lithography techniques based on physical deformation of a polymer to generate surface relief structures have produced features in PMMA as small as 10 nm, but it is very difficult to imprint large depressed features or to imprint a thick films of resist with high aspect-ratio features by these techniques. SFIL overcomes these difficulties by exploiting the selectivity and anisotropy of reactive ion etch (RIE). First, a thick organic 'transfer' layer (0.3 micrometer to 1.1 micrometer) is spin coated to planarize the wafer surface. A low viscosity, liquid organosilicon photopolymer precursor is then applied to the substrate and a quartz template applied at 2 psi. Once the master is in contact with the organosilicon solution, a crosslinking photopolymerization is initiated via backside illumination with broadband UV light. When the layer is cured the template is removed. This process relies on being able to imprint the photopolymer while leaving the minimal residual material in the depressed areas. Any excess material is etched away using a CHF3/He/O2 RIE. The exposed transfer layer is then etched with O2 RIE. The silicon incorporated in the photopolymer allows amplification of the low aspect ratio relief structure in the silylated resist into a high aspect ratio feature in the transfer layer. The aspect ratio is limited only by the mechanical stability of the transfer layer material and the O2 RIE selectivity and anisotropy. This method has produced 60 nm features with 6:1 aspect ratios. This lithography process was also used to fabricate alternating arrays of 100 nm Ti lines on a 200 nm pitch that function as efficient micropolarizers. Several types of optical devices including gratings, polarizers, and sub-wavelength structures can be easily patterned by SFIL.

  16. Mask CD measurement approach by diffraction intensity for lithography equivalent

    NASA Astrophysics Data System (ADS)

    Nagai, Takaharu; Mesuda, Kei; Sutou, Takanori; Inazuki, Yuichi; Hashimoto, Hiroyuki; Yokoyama, Toshifumi; Toyama, Nobuhito; Morikawa, Yasutaka; Mohri, Hiroshi; Hayashi, Naoya

    2008-04-01

    In 45nm node and beyond with hyper NA lithography, mask topography effect is not ignorable and mask CD bias impacts printing performance such as MEEF or exposure latitude. In that situation, 3D simulation is required for precise evaluation of printing performance and the accuracy of 3D mask model on simulation is a key issue. Verification of 3D mask model by diffraction intensity measurement with AIMS TM45-193i was discussed in our previous works. Through the verification, though real mask successfully creates effective or simulated diffractions, CD on 3D mask model on simulation was different to that on AIMS TM result which was measured by CD-SEM. Therefore, purpose of this work is to analyze the cause of CD differences through AIMS TM diffraction intensity evaluation in various conditions (mask material, pattern pitch, mask CD bias and mask CD-SEM system). Furthermore, lithography equivalent CD is proposed as width of "ideal" mask shape. As a result achieved from the experiments, constant CD shift was successfully observed at hp40-70nm L/S pattern with varied bias for both 6% EAPSM and Binary masks. It can be said that mask topography difference related to mask material and pattern dimensions has not been observed. On the other hand, the value of CD shift was smaller on the condition of newer generation CD-SEM measurement. Other result achieved from further discussion and analysis, cause of the CD difference was explained using simple SEM image simulation. The CD difference was mainly changed by electron beam size factor, and it was stable with side wall angle in the range of 80 to 90 degree if the middle CD, which is the width of 3D model defined at the half height of the mask film's thickness, is constant. Since side wall angles on actual masks are nearly 90 degree, lithography equivalent CD could be measured by CD-SEM with constant offset.

  17. Low-cost method for producing extreme ultraviolet lithography optics

    DOEpatents

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  18. Nanoimprint lithography of Al nanovoids for deep-UV SERS.

    PubMed

    Ding, Tao; Sigle, Daniel O; Herrmann, Lars O; Wolverson, Daniel; Baumberg, Jeremy J

    2014-10-22

    Deep-ultraviolet surface-enhanced Raman scattering (UV-SERS) is a promising technique for bioimaging and detection because many biological molecules possess UV absorption lines leading to strongly resonant Raman scattering. Here, Al nanovoid substrates are developed by combining nanoimprint lithography of etched polymer/silica opal films with electron beam evaporation, to give a high-performance sensing platform for UV-SERS. Enhancement by more than 3 orders of magnitude in the UV-SERS performance was obtained from the DNA base adenine, matching well the UV plasmonic optical signatures and simulations, demonstrating its suitability for biodetection. PMID:25291629

  19. Nanoscale control of polymer crystallization by nanoimprint lithography.

    PubMed

    Hu, Zhijun; Baralia, Gabriel; Bayot, Vincent; Gohy, Jean-François; Jonas, Alain M

    2005-09-01

    Polymer crystallization is notoriously difficult to control. Here, we demonstrate that the orientation of polymer crystals can be fully controlled at the nanoscale by using nanoimprint lithography (NIL) with molds bearing nanotrenches to shape thin films of poly(vinylidene fluoride). This unprecedented control is due to the thermomechanical history experienced by the polymer during embossing, to the shift of the nucleation mechanism from heterogeneous to homogeneous in confined regions of the mold, and to the constraining of the fast growth axis along the direction of the trenches. NIL thus appears as an ideal tool to realize smart polymer surfaces where crystal ordering can be tuned locally.

  20. Development of a laboratory extreme-ultraviolet lithography tool

    SciTech Connect

    Tichenor, D.A.; Kubiak, G.D.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H.; Birtola, S.R.; Jin, P.S.; Arling, R.W.; Ray-Chaudhuri, A.K.; Sweatt, W.C.; Chow, W.W.; Bjorkholm, J.E.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Fetter, L.A.; Wood, O.R. II; Waskiewicz, W.K.; White, D.L.; Windt, D.L.; Jewell, T.E.

    1994-04-01

    The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzchild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.

  1. Practical constraints on sources for pulsed beam lithographies

    SciTech Connect

    Tsao, J.Y.; Picraux, S.T.; Light, R.W.; Hsing, W.W.

    1988-03-01

    Many of the sources currently being considered for advanced microlithography are pulsed, rather than continuous. These sources are characterized not merely by brightness and lifetime, but more generally by shot-to-shot stability, lifetime, single-pulse fluence, and repetition rate. These four characteristics are constrained by practical considerations, and, within limits, can be traded off against each other. We describe these tradeoffs and optimal source operating regimes for lithographies based on broad- and narrow-band excimer laser sources and on pulsed x-ray sources. 18 refs., 2 figs.

  2. Lithography on GaP(1 0 0) surfaces

    NASA Astrophysics Data System (ADS)

    Flores-Perez, Rosangelly; Zemlyanov, Dmitry Y.; Ivanisevic, Albena

    2008-06-01

    Two types of lithographic methods were used to modify GaP(1 0 0) surfaces with commercially available alkanethiol molecules: microcontact printing (μCP) and "dip-pen" nanolithography (DPN). The patterned surfaces were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS). The characterization was done in order to understand the quality of each type of pattern, its chemical composition, and the organization of the molecules on the surface. Differences between the two lithographic methods used to do lithography on the GaP(1 0 0) in this study were dependent on the chosen molecular "ink".

  3. Self-cleaning optic for extreme ultraviolet lithography

    DOEpatents

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  4. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  5. Evaluation Of An Organosilicon Photoresist For Excimer Laser Lithography

    NASA Astrophysics Data System (ADS)

    McFarland, Janet C.; Orvek, Kevin J.; Ditmer, Gary A.

    1988-01-01

    An organosilicon resist was investigated for use in deep UV laser lithography. The resist was based on 0-trimethylsilyl poly(vinylphenol) resin. It was found to exhibit transparency at 248nm comparable to the transparency of g-line light in conventional novolak resists, making single-layer resist processing possible. The results of single-layer and bi-layer patterning on an excimer laser contact printer are presented. The bi-layer processing uses oxygen reactive ion etching (RIE) for transfer of a top layer pattern into a thick underlying novolak layer.

  6. Masks for high aspect ratio x-ray lithography

    SciTech Connect

    Malek, C.K.; Jackson, K.H.; Bonivert, W.D.; Hruby, J.

    1997-04-01

    Fabrication of very high aspect ratio microstructures, as well as ultra-high precision manufacturing is of increasing interest in a multitude of applications. Fields as diverse as micromechanics, robotics, integrated optics, and sensors benefit from this technology. The scale-length of this spatial regime is between what can be achieved using classical machine tool operations and that which is used in microelectronics. This requires new manufacturing techniques, such as the LIGA process, which combines x-ray lithography, electroforming, and plastic molding.

  7. Patterning of crystalline organic materials by electro-hydrodynamic lithography.

    PubMed

    Goldberg-Oppenheimer, Pola; Kohn, Peter; Langford, Richard M; Steiner, Ullrich

    2012-08-20

    The control of semi-crystalline polymers in thin films and in micrometer-sized patterns is attractive for (opto-)electronic applications. Electro-hydrodynamic lithography (EHL) enables the structure formation of organic crystalline materials on the micrometer length scale while at the same time exerting control over crystal orientation. This gives rise to well-defined micro-patterned arrays of uniaxially aligned polymer crystals. This study explores the interplay of EHL structure formation with crystal alignment and studies the mechanisms that give rise to crystal orientation in EHL-generated structures. PMID:22674540

  8. Surface force measurement of ultraviolet nanoimprint lithography materials

    NASA Astrophysics Data System (ADS)

    Taniguchi, Jun; Hasegawa, Masayuki; Amemiya, Hironao; Kobayashi, Hayato

    2016-02-01

    Ultraviolet nanoimprint lithography (UV-NIL) has advantages such as room-temperature operation, high through-put, and high resolution. In the UV-NIL process, the mold needs a release coating material to prevent adhesion of the transfer resin. Usually, fluorinated silane coupling agents are used as release coating materials. To evaluate the release property, surface force analyzer equipment was used. This equipment can measure the surface forces between release-coated or noncoated mold material surfaces and UV-cured resin surfaces in the solid state. Lower surface forces were measured when a release coating was used on the mold material surface.

  9. Nanoimprint Lithography of Al Nanovoids for Deep-UV SERS

    PubMed Central

    2014-01-01

    Deep-ultraviolet surface-enhanced Raman scattering (UV-SERS) is a promising technique for bioimaging and detection because many biological molecules possess UV absorption lines leading to strongly resonant Raman scattering. Here, Al nanovoid substrates are developed by combining nanoimprint lithography of etched polymer/silica opal films with electron beam evaporation, to give a high-performance sensing platform for UV-SERS. Enhancement by more than 3 orders of magnitude in the UV-SERS performance was obtained from the DNA base adenine, matching well the UV plasmonic optical signatures and simulations, demonstrating its suitability for biodetection. PMID:25291629

  10. Reclassification Patterns among Latino English Learner Students in Bilingual, Dual Immersion, and English Immersion Classrooms

    ERIC Educational Resources Information Center

    Umansky, Ilana M.; Reardon, Sean F.

    2014-01-01

    Schools are under increasing pressure to reclassify their English learner (EL) students to "fluent English proficient" status as quickly as possible. This article examines timing to reclassification among Latino ELs in four distinct linguistic instructional environments: English immersion, transitional bilingual, maintenance bilingual,…

  11. Vesicle electrohydrodynamic simulations by coupling immersed boundary and immersed interface method

    NASA Astrophysics Data System (ADS)

    Hu, Wei-Fan; Lai, Ming-Chih; Seol, Yunchang; Young, Yuan-Nan

    2016-07-01

    In this paper, we develop a coupled immersed boundary (IB) and immersed interface method (IIM) to simulate the electrodeformation and electrohydrodynamics of a vesicle in Navier-Stokes leaky dielectric fluids under a DC electric field. The vesicle membrane is modeled as an inextensible elastic interface with an electric capacitance and an electric conductance. Within the leaky dielectric framework and the piecewise constant electric properties in each fluid, the electric stress can be treated as an interfacial force so that both the membrane electric and mechanical forces can be formulated in a unified immersed boundary method. The electric potential and transmembrane potential are solved simultaneously via an efficient immersed interface method. The fluid variables in Navier-Stokes equations are solved using a projection method on a staggered MAC grid while the electric potential is solved at the cell center. A series of numerical tests have been carefully conducted to illustrate the accuracy and applicability of the present method to simulate vesicle electrohydrodynamics. In particular, we investigate the prolate-oblate-prolate (POP) transition and the effect of electric field and shear flow on vesicle electrohydrodynamics. Our numerical results are in good agreement with those obtained in previous work using different numerical algorithms.

  12. The Feel Good Factor: Comparing Immersion by Design and Immersion by Default Models

    ERIC Educational Resources Information Center

    Gallagher, Fiona; Leahy, Angela

    2014-01-01

    This article presents findings from an exploratory research project entitled "Gaelscoileanna and Multicultural classrooms: the potential for transfer to enhance L2 learning experiences". The project focussed on two language immersion contexts in Ireland which, despite obvious differences, share a range of significant commonalities. One…

  13. Immersion francaise precoce: Musique 1-7 (Early French Immersion: Music for Grades 1-7).

    ERIC Educational Resources Information Center

    Burt, Andy; And Others

    This curriculum guide in music is intended for use in grades 1-7 in the early French immersion program. The program is presented as one that contributes to the development of the child, calls for flexibility and diversification, and requires a solid music education on the part of the teacher. The guide presents the following topics: (1) statements…

  14. Nanoimprint lithography with a focused laser beam for the fabrication of nanopatterned microchannel molds.

    PubMed

    Lim, Hyungjun; Ryu, Jihyeong; Kim, Geehong; Choi, Kee-Bong; Lee, Sunghwi; Lee, Jaejong

    2013-08-21

    We present a process based on nanoimprint lithography for the fabrication of a microchannel mold having nanopatterns formed at the bottoms of its microchannels. A focused laser beam selectively cures the resist in the micrometer scale during nanoimprint lithography. Nanopatterns within the microchannels may be used to control microfluidic behavior.

  15. Factors which affect shivering in man during cold water immersion.

    PubMed

    Martin, S; Cooper, K E

    1981-07-01

    Six subjects were immersed in cold water (15.15 +/- 0.42 degrees C) and were asked to perform two tasks. Shivering elicited by the cold water immersion was attenuated and/or abolished by the mental arithmetic task and in some instances by a voluntary isometric contraction of forearm muscles. Some reasons for these results are discussed. Key words: Cold water immersion, mental arithmetic forearm isometric contraction, attenuation of shivering.

  16. Foreign language learning in immersive virtual environments

    NASA Astrophysics Data System (ADS)

    Chang, Benjamin; Sheldon, Lee; Si, Mei; Hand, Anton

    2012-03-01

    Virtual reality has long been used for training simulations in fields from medicine to welding to vehicular operation, but simulations involving more complex cognitive skills present new design challenges. Foreign language learning, for example, is increasingly vital in the global economy, but computer-assisted education is still in its early stages. Immersive virtual reality is a promising avenue for language learning as a way of dynamically creating believable scenes for conversational training and role-play simulation. Visual immersion alone, however, only provides a starting point. We suggest that the addition of social interactions and motivated engagement through narrative gameplay can lead to truly effective language learning in virtual environments. In this paper, we describe the development of a novel application for teaching Mandarin using CAVE-like VR, physical props, human actors and intelligent virtual agents, all within a semester-long multiplayer mystery game. Students travel (virtually) to China on a class field trip, which soon becomes complicated with intrigue and mystery surrounding the lost manuscript of an early Chinese literary classic. Virtual reality environments such as the Forbidden City and a Beijing teahouse provide the setting for learning language, cultural traditions, and social customs, as well as the discovery of clues through conversation in Mandarin with characters in the game.

  17. Immersive Environment Technologies for Mars Exploration

    NASA Technical Reports Server (NTRS)

    Wright, John R.; Hartman, Frank

    2000-01-01

    JPL's charter includes the unmanned exploration of the Solar System. One of the tools for exploring other planets is the rover as exemplified by Sojourner on the Mars Pathfinder mission. The light speed turnaround time between Earth and the outer planets precludes the use of teleoperated rovers so autonomous operations are built in to the current and upcoming generation devices. As the level of autonomy increases, the mode of operations shifts from low-level specification of activities to a higher-level specification of goals. To support this higher-level activity, it is necessary to provide the operator with an effective understanding of the in-situ environment and also the tools needed to specify the higher-level goals. Immersive environments provide the needed sense of presence to achieve this goal. Use of immersive environments at JPL has two main thrusts that will be discussed in this talk. One is the generation of 3D models of the in-situ environment, in particular the merging of models from different sensors, different modes (orbital, descent, and lander), and even different missions. The other is the use of various tools to visualize the environment within which the rover will be operating to maximize the understanding by the operator. A suite of tools is under development which provide an integrated view into the environment while providing a variety of modes of visualization. This allows the operator to smoothly switch from one mode to another depending on the information and presentation desired.

  18. Immersed boundary methods for viscoelastic particulate flows

    NASA Astrophysics Data System (ADS)

    Krishnan, Sreenath; Shaqfeh, Eric; Iaccarino, Gianluca

    2015-11-01

    Viscoelastic particulate suspensions play key roles in many energy applications. Our goal is to develop a simulation-based tool for engineering such suspensions. This study is concerned with fully resolved simulations, wherein all flow scales associated with the particle motion are resolved. The present effort is based on Immersed Boundary methods, in which the domain grids do not conform to particle geometry. In this approach, the conservation of momentum equations, which include both Newtonian and non-Newtonian stresses, are solved over the entire domain including the region occupied by the particles. The particles are defined on a separate Lagrangian mesh that is free to move over an underlying Eulerian grid. The development of an immersed boundary forcing technique for moving bodies within an unstructured-mesh, massively parallel, non-Newtonian flow solver is thus developed and described. The presentation will focus on the numerical algorithm and measures taken to enable efficient parallelization and transfer of information between the underlying fluid grid and the particle mesh. Several validation test cases will be presented including sedimentation under orthogonal shear - a key flow in drilling muds and fracking fluids.

  19. Immersive STEM: From Fulldome to VR Technologies

    NASA Astrophysics Data System (ADS)

    Wyatt, R. J.

    2015-12-01

    For more than 15 years, fulldome video technology has transformed planetariums worldwide, using data-driven visualizations to support science storytelling. Fulldome video shares significant technical infrastructure with emerging VR headset technologies, and these personalized VR experiences allow for new audiences and new experiences of an existing library of context—as well as affording new opportunities for fulldome producers to explore. At the California Academy of Sciences, we are translating assets for our planetarium shows into immersive experiences for a variety of HR headsets. We have adapted scenes from our four award-wining features—Fragile Planet (2008), Life: A Cosmic Story (2010), Earthquake: Evidence of a Restless Planet (2012), and Habitat Earth (2015)—to place viewers inside a virtual planetarium viewing the shows. Similarly, we have released two creative-commons mini-shows on various VR outlets. This presentation will also highlight content the Academy will make available from our upcoming 2016 planetarium show about asteroids, comets, and solar system origins, some of which has been formatted for a full four-pi-steradian perspective. The shared immersive environment of digital planetariums offers significant opportunities for education and affective engagement of STEM-hungry audiences—including students, families, and adults. With the advent of VR technologies, we can leverage the experience of fulldome producers and planetarium professionals to create personalized home experiences that allow new ways to experience their content.

  20. Immersive 3D Visualization of Astronomical Data

    NASA Astrophysics Data System (ADS)

    Schaaff, A.; Berthier, J.; Da Rocha, J.; Deparis, N.; Derriere, S.; Gaultier, P.; Houpin, R.; Normand, J.; Ocvirk, P.

    2015-09-01

    The immersive-3D visualization, or Virtual Reality in our study, was previously dedicated to specific uses (research, flight simulators, etc.) The investment in infrastructure and its cost was reserved to large laboratories or companies. Lately we saw the development of immersive-3D masks intended for wide distribution, for example the Oculus Rift and the Sony Morpheus projects. The usual reaction is to say that these tools are primarily intended for games since it is easy to imagine a player in a virtual environment and the added value to conventional 2D screens. Yet it is likely that there are many applications in the professional field if these tools are becoming common. Introducing this technology into existing applications or new developments makes sense only if interest is properly evaluated. The use in Astronomy is clear for education, it is easy to imagine mobile and light planetariums or to reproduce poorly accessible environments (e.g., large instruments). In contrast, in the field of professional astronomy the use is probably less obvious and it requires to conduct studies to determine the most appropriate ones and to assess the contributions compared to the other display modes.