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Sample records for 193nm optical lithography

  1. New antireflective coatings for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Xu, Gu; Guerrero, Douglas J.; Dobson, Norman

    1998-06-01

    New bottom antireflective coatings (BARCs) for 193 nm lithography have been recently developed by Brewer Science Inc. Copolymers of benzyl methacrylate (or benzyl acrylate) and hydroxypropyl methacrylate have been synthesized and used as a main component in 193 nm BARCs. The acrylic copolymers have strong absorbance at 193 nm UV light wavelength. The 193 nm BARCs were formulated in safe solvents such as ethyl lactate and formed by spin-on coating process. Thermosetting of the 193 nm BARCs limited their intermixing with photoresists. These 193 nm BARCs had optical density of about 10 micrometers -1, k equals 0.35, and n equals 1.81. Preliminary oxygen plasma etch rates were > 1.5 times DUV resists. Good profiles at small feature sizes (< 0.20 micrometers ) were achieved with tested photoresists.

  2. High index fluoride materials for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Nawata, T.; Inui, Y.; Masada, I.; Nishijima, E.; Satoh, H.; Fukuda, T.

    2006-03-01

    We tried to investigate various kinds of metal fluoride materials which have higher gravity than CaF II and cubic crystal system, and we found out barium lithium fluoride (BaLiF 3) and potassium yttrium fluoride (KY 3F 10) as candidates for the last lens material. We have developed unique Czochralski (CZ) machines and techniques for the growth of large calcium fluoride single crystals. And we applied these technologies to the growth of fluoride high index materials. We have succeeded to grow the large BaLiF 3 single crystal with 120mm in diameter and a KY 3F 10 single crystal, and measured their basic properties such as refractive index, VUV transmittance, birefringence, and so on. As a result of our basic research, we found out that BaLiF 3 single crystal is transparent at VUV region, and the refractive index at 193nm is 1.64, and KY 3F 10 single crystal has the index of 1.59 at the wavelength of 193nm which is slightly higher than fused silica. We expect that these fluoride high index materials are useful for the last lens material of the next generation immersion lithography.

  3. Excimer lasers for superhigh NA 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Paetzel, Rainer; Albrecht, Hans S.; Lokai, Peter; Zschocke, Wolfgang; Schmidt, Thomas; Bragin, Igor; Schroeder, Thomas; Reusch, Christian; Spratte, Stefan

    2003-06-01

    Excimer lasers are widely used as the light source for microlithography scanners. The volume shipment of scanner systems using 193nm is projected to begin in year 2003. Such tools will directly start with super high numerical aperture (NA) in order to take full advantage of the 193nm wavelength over the advanced 248nm systems. Reliable high repetition rate laser light sources enabling high illumination power and wafer throughput are one of the fundamental prerequisites. In addition these light sources must support a very high NA imaging lens of more than 0.8 which determines the output spectrum of the laser to be less than 0.30 pm FWHM. In this paper we report on our recent progress in the development of high repetition rate ultra-narrow band lasers for high NA 193nm microlithography scanners. The laser, NovaLine A4003, is based on a Single Oscillator Ultral Line-narrowed (SOUL) design which yields a bandwidth of less than 0.30pm FWHM. The SOUL laser enables superior optical performance without adding complexity or cost up to the 4 kHz maximum repetition rate. The A4003's high precision line-narrowing optics used in combination with the high repetition rate of 4 kHz yields an output power of 20 W at an extremely narrow spectral bandwidth of less than 0.30 pm FWHM and highest spectral purity of less than 0.75 pm for the 95% energy content. We present performance and reliability data and discuss the key laser parameters. Improvements in the laser-internal metrology and faster regulation control result in better energy stability and improved overall operation behavior. The design considerations for line narrowing and stable laser operation at high repetition rates are discussed.

  4. Customized illumination shapes for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ling, Moh Lung; Chua, Gek Soon; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2008-03-01

    In this paper, a study on customized illumination shape configurations as resolution enhancement for 45nm technology node will be presented. Several new source shape configurations will be explored through simulation based on 193nm immersion lithography on 6% Attenuated Phase Shift Mask. Forbidden pitch effect is commonly encountered in the application of off axis illumination (OAI). The illumination settings are often optimized to allow maximum process window for a pitch. This is done by creating symmetrical distribution of diffraction order on the pupil plane. However, at other pitch, the distribution of diffraction order on the pupil plane results in severe degradation in image contrast and results in significant critical dimension (CD) fluctuation. The problematic pitch is often known as forbidden pitch. It has to be avoided in the design and thus limited the pitch range to be imaged for particular illumination. An approach to modify off axis illumination to minimize the effect of forbidden pitch is explored in this study. The new customized shape for one dimensional line and space pattern is modified from current off axis illumination. Simulation study is done to evaluate the performance some customized shapes. The extent of CD fluctuation and CD through pitch uniformity is analyzed to determine the performance enhancement of the new illumination shapes. From simulation result, the proposed modification have significantly improved the through pitch performance and minimized the effect of forbidden pitch.

  5. Development of fluoropolymer for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Shirota, Naoko; Takebe, Yoko; Sasaki, Takashi; Yokokoji, Osamu; Toriumi, Minoru; Masuhara, Hiroshi

    2006-03-01

    We had already developed several series of fluoropolymers, FPRs and FUGUs, having a partially fluorinated monocyclic structure and having acidic hydroxyl group, which acts as dissolution unit into alkaline solution. Then we have optimized these polymers for top-coat as the developer-soluble type in the 193nm immersion lithography. However the hydrophobicity of these polymers were a little poor due to its hydroxyl group. So we thought that the introduction of water repellent moiety into the these polymers structure is effective to improve the their hydrophobicity though the increase of water repellent unit in the polymer leads to lower dissolution rate in developer. To introduce as much as possible of hydrophobicity unit, we selected FUGU as platform, which has larger dissolution rate in developer than that of FPRs, We copolymerized FUGU with higher water-repellent component and obtained three copolymers, FUGU-CoA, FUGU-CoB, and FUGU-CoC. In this paper, we described characteristics and evaluation of these polymers. Most of these polymer showed an improvement of hydrophobicity, in particular FUGU-CoB had excellent hydrophobicity due to introduction bulky containing-fluorine group. In this study, we also investigated the interaction between the water and various polymers by using QCM method. The difference between FUGU and water repellent polymers for swelling behavior to water became clear by analysis of diffusion coefficient. We found that our new co-polymers have excellent diffusion coefficient than FUGU which was confirmed by QCM method used to evaluate water permeability and water diffusion in the materials.

  6. Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Meador, James D.; Beaman, Carol; Stroud, Charlyn; Lowes, Joyce A.; Zhu, Zhimin; Guerrero, Douglas J.; Mercado, Ramil-Marcelo L.; Drain, David

    2008-03-01

    A family of dye-filled developer-soluble bottom anti-reflective coatings (BARCs) has been developed for use in 193-nm microlithography. This new dye-filled chemical platform easily provides products covering a wide range of optical properties. The light-sensitive and positive-working BARCs use a transparent polymeric binder and a polymeric dye in a thermally crosslinking formulation, with the cured products then being photochemically decrosslinked prior to development. The cured BARC films are imaged and removed with developer in the same steps as the covering photoresist. Two dye-filled BARCs with differing optical properties were developed via a series of DOEs and then used as a dual-layer BARC stack. Lithography with this BARC stack, using a 193-nm resist, gave 150-nm L/S (1:1). A 193-nm dual-layer BARC stack (gradient optical properties) from the well-established dye-attached family of light-sensitive BARCs also gave 150-nm L/S (1:1) with the same resist. However, the latter provided much improved line shape with no scumming. The targeted application for light-sensitive dual-layer BARCs is high-numerical aperture (NA) immersion lithography where a single-layer BARC will not afford the requisite reflection control.

  7. Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Yamashita, T.; Ishikawa, T.; Yoshida, T.; Hayamai, T.; Araki, Takayuki; Aoyama, H.; Hagiwara, T.; Itani, Toshiro; Fujii, Kiyoshi

    2005-05-01

    Various fluorinated polymers were synthesized for application in 193-nm immersion lithography with the goal of improving 157-nm photoresist performance. Their fundamental properties were characterized, such as transparency at 193-nm and 157-nm (wavelength) and solubility in water and a standard alkaline developer. High transparency, i.e., absorbance better than 0.3 μm-1 at 193-nm wavelength, was achieved. The dissolution behaviors of them were studied by using the Quartz Crystal Microbalance (QCM) method. We find that the dissolution rate of Poly(norbornene-2-fluoro-2-hexafluoroalchol) (PNB1FVIP) in 0.065N tetramethylammonium hydroxide (TMAH) was >200 times (nm/s) faster than that of the copolymer of tetrafluoroethylene (TFE) and norbornene-2-fluoro-2-hexafluoroalchol (TFE/NB1FVIP). A resist based on TFE/NB1FVIP was able to delineate 75 nm dense lines by exposure at 193-nm (wavelength) with an alternating phase shift mask using a 0.75 NA ArF scanner. The dissolution rates of the fluoropolymers in water and a 0.262N and 0.065 TMAH can be controlled by optimizing counter monomers containing hexafluoroisopropanol (HFA) unit, carboxylic acid unit and so on. In addition, we have collect water contact angle data. This data shows that fluoropolymers can be used as resist cover materials for 193-nm immersion lithography.

  8. Chemical trimming overcoat: an enhancing composition and process for 193nm lithography

    NASA Astrophysics Data System (ADS)

    Liu, Cong; Rowell, Kevin; Joesten, Lori; Baranowski, Paul; Kaur, Irvinder; Huang, Wanyi; Leonard, JoAnne; Jeong, Hae-Mi; Im, Kwang-Hwyi; Estelle, Tom; Cutler, Charlotte; Pohlers, Gerd; Yin, Wenyan; Fallon, Patricia; Li, Mingqi; Jeon, Hyun; Xu, Cheng Bai; Trefonas, Pete

    2016-03-01

    As the critical dimension of devices is approaching the resolution limit of 193nm photo lithography, multiple patterning processes have been developed to print smaller CD and pitch. Multiple patterning and other advanced lithographic processes often require the formation of isolated features such as lines or posts by direct lithographic printing. The formation of isolated features with an acceptable process window, however, can pose a challenge as a result of poor aerial image contrast at defocus. Herein we report a novel Chemical Trimming Overcoat (CTO) as an extra step after lithography that allows us to achieve smaller feature size and better process window.

  9. Inspection of advanced computational lithography logic reticles using a 193-nm inspection system

    NASA Astrophysics Data System (ADS)

    Yu, Ching-Fang; Lin, Mei-Chun; Lai, Mei-Tsu; Hsu, Luke T. H.; Chin, Angus; Lee, S. C.; Yen, Anthony; Wang, Jim; Chen, Ellison; Wu, David; Broadbent, William H.; Huang, William; Zhu, Zinggang

    2010-09-01

    We report inspection results of early 22-nm logic reticles designed with both conventional and computational lithography methods. Inspection is performed using a state-of-the-art 193-nm reticle inspection system in the reticleplane inspection mode (RPI) where both rule-based sensitivity control (RSC) and a newer modelbased sensitivity control (MSC) method are tested. The evaluation includes defect detection performance using several special test reticles designed with both conventional and computational lithography methods; the reticles contain a variety of programmed critical defects which are measured based on wafer print impact. Also included are inspection results from several full-field product reticles designed with both conventional and computational lithography methods to determine if low nuisance-defect counts can be achieved. These early reticles are largely single-die and all inspections are performed in the die-to-database inspection mode only.

  10. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  11. Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography

    NASA Astrophysics Data System (ADS)

    Krysak, Marie; Trikeriotis, Markos; Schwartz, Evan; Lafferty, Neal; Xie, Peng; Smith, Bruce; Zimmerman, Paul; Montgomery, Warren; Giannelis, Emmanuel; Ober, Christopher K.

    2011-04-01

    We have developed a transparent, high refractive index inorganic photoresist with significantly higher etch resistance than even the most robust polymeric resist. As feature sizes continue to decrease, film thickness must be reduced in order to prevent pattern collapse. Normally thinner films prevent sufficient pattern transfer during the etch process, creating the need for a hardmask, thus increasing production cost. Compared to PHOST, we have shown over 10 times better etch resistance. Organic photo-crosslinkable ligands have been attached to a hafnium oxide nanoparticle core to create an imageable photoresist. This resist has shown superior resolution with both E-beam and 193 nm lithography, producing sub-50 nm patterns. In addition to improved etch resistance, the inorganic photoresist exhibits a high refractive index, increasing the depth of focus (DOF). The nanoparticle size of ~ 1-2 nm has the potential to reduce line edge roughness (LER).

  12. CD-SEM measurement line-edge roughness test patterns for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin D.; Bishop, Michael; Villarrubia, John S.; Vladar, Andras E.

    2003-05-01

    The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 ITRS roadmap. The Advanced Metrology Advisory Group (AMAG, a council composed of the chief CD-metrologists from the International SEMATECH consortium's Member Companies and from the National Institute of Standards and Technology, NIST) has begun a project to investigate this issue and to direct the CD-SEM supplier community towards a semiconductor industry-backed solution for implementation. The AMAG group has designed and built a 193 nm reticle that includes structures implementing a number of schemes to intentionally cause line edge roughness of various spatial frequencies and amplitudes. The lithography of these structures is in itself of interest to the litho-metrology community and will be discussed here. Measurements on different CD-SEMs of major suppliers will be used to comparatively demonstrate the current state of LER measurement. These measurements are compared to roughness determined off-line by analysis of top-down images from these tools. While no official standard measurement algorithm or definition of LER measurement exists, definitions used in this work are presented and compared in use. Repeatability of the measurements and factors affecting their accuracy will be explored, as well as how CD-SEM parameters can effect the measurements.

  13. CD-SEM measurement line edge roughness test patterns for 193 nm lithography

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin D.; Bishop, Michael; Villarrubia, John S.; Vladar, Andras E.

    2003-07-01

    The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS) roadmap. The Advanced Metrology Advisory Group (AMAG, a council composed of the chief metrologists from the International SEMATECH (ISMT) consortium"s Member Companies and from the National Institute of Standards and Technology (NIST) has begun a project to investigate this issue and to direct the critical dimension scanning electron microscope (CD-SEM) supplier community towards a semiconductor industry-backed solution for implementation. The AMAG group has designed and built a 193 nm reticle that includes structures implementing a number of schemes to intentionally cause line edge roughness of various spatial frequencies and amplitudes. The lithography of these structures is in itself of interest to the litho-metrology community and will be discussed here. These structures, along with several other photolithography process variables, have been used to fabricate a set of features of varying roughness value and structure which span the LER process space of interest. These references are, in turn, useful for evaluation of LER measurement capability. Measurements on different CD-SEMs of major suppliers were used to demonstrate the current state of LER measurement. These measurements were compared to roughness determined off-line by analysis of top-down images from these tools. While no official standard measurement algorithm or definition of LER measurement exists, definitions used in this work are presented and compared in use. Repeatability of the measurements and factors affecting their accuracy were explored, as well as how CD-SEM parameters can affect the measurements.

  14. Optical characterization of 193nm amorphous carbon ARC films

    NASA Astrophysics Data System (ADS)

    Leng, Jingmin; Opsal, Jon; Pois, Heath

    2005-05-01

    In this study, the optical properties of amorphous carbon (aC) ARC films are investigated using an Opti-probe OP7341, and a metrology solution that robustly measures a broad range of process conditions is presented. We find that the aC material is consistent with uni-axial anisotropy, and that this effect may have important implications for photolithography. These results are obtained through the combination of multiple technologies in one tool: spectroscopic ellipsometry (SE); spectroscopic reflectometry or broadband (BB), with a wavelength range of 190-840 nm; single wavelength (673 nm) but multiple incident angle beam profile reflectometry (BPR) and beam profile ellipsometry (BPE), and single wavelength (633nm) absolute ellipsometry (AE). The combination of technologies at multiple angles and wavelengths provides additional optical information and sensitivity not possible with single-technology approaches. A complex wavelength dependent anisotropy model was developed for this analysis, and is compared with a real anisotropy model. The complex anisotropy model and the effective medium approximation (EMA) with two and three components were applied to a set of 12 wafer set with thickness swing aC films in the range of 500-750 Å as well as a second set of 23 pre- and post- etch wafers. The complex anisotropy model clearly has the advantage of best fit the BPR profiles along with the SE Fourier coefficients. The etch rate obtained by the complex anisotropy also showed a much narrower variation as compared with the EMA2 and EMA32 models with the real anisotropy.

  15. Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

    SciTech Connect

    Rao, V.; Hutchinson, J.; Holl, S.; Langston, J.; Henderson, C.; Wheeler, D.R.; Cardinale, G.; OConnell, D.; Goldsmith, J.; Bohland, J.; Taylor, G.; Sinta, R.

    1998-11-01

    The maturity and acceptance of top surface imaging (TSI) technology have been hampered by several factors including inadequate resist sensitivity and line edge roughness. We have found that the use of a chemically amplified resist can improve the sensitivity in these systems by 1.5{endash} 2{times} without compromising the line edge roughness. In addition, we have shown improved line edge roughness by increasing the molecular weight of the polymeric resin in the resist. Using these materials approaches, we have been able to show excellent resolution images with the TSI process for both 193 nm and extreme ultraviolet (13.4 nm) patterning. {copyright} {ital 1998 American Vacuum Society.}

  16. Double-exposure materials for pitch division with 193nm lithography: requirements, results

    NASA Astrophysics Data System (ADS)

    Bristol, Robert; Shykind, David; Kim, Sungwon; Borodovsky, Yan; Schwartz, Evan; Turner, Courtney; Masson, Georgeta; Min, Ke; Esswein, Katherine; Blackwell, James M.; Suetin, Nikolay

    2009-03-01

    We present the results of both theoretical and experimental investigations of materials for application either as a reversible Contrast Enhancement Layer (rCEL) or a Two-Stage PAG. The purpose of these materials is to enable Litho- Litho-Etch (LLE) patterning for Pitch Division (PD) at the 16nm logic node (2013 Manufacturing). For the rCEL, we find from modeling using an E-M solver that such a material must posses a bleaching capability equivalent to a Dill A parameter of greater than 100. This is at least a factor of ten greater than that achieved so far at 193nm by any usable organic material we have tested. In the case of the Two-Stage PAG, analytical and lithographic modeling yields a usable material process window, in terms of reversibility and two-photon vs. one-photon acid production rates (branching ratio). One class of materials, based on the cycloadduct of a tethered pair of anthracenes, has shown promise under testing at 193nm in acetonitrile. Sufficient reversibility without acid production, enabled by near-UV exposure, has been achieved. Acid production as a function of dose shows a clear quadratic component, consistent with a branching ratio greater than 1. The experimental data also supports a acid contrast value of approximately 0.05 that could in principle be obtained with this molecule under a pitch division double-exposure scenario.

  17. A design of beam shaping unit for 193nm lithography illumination system using angular spectrum theory

    NASA Astrophysics Data System (ADS)

    Zhao, Yang; Gong, Yan; Li, Shun; Zhang, Wei

    2010-08-01

    Off-axis illumination (OAI) technology is widely used to enhance resolution for deep ultraviolet lithography. The realizing methods of OAI include geometrical optics method and physical optics method. However, the former has the disadvantage of weak intensity distribution controlling ability, and the latter introduces simulation errors evidently when dealing with near field diffraction propagation. A diffractive optical element (DOE) designing method using plane wave angular spectrum theory is presented in this paper. Several kinds of OAI modes at near field away from DOE can be realized, and simulation errors and the size of illuminator are also reduced. According to studying the relationships of the sampling point distance of DOE, light beam propagation distance, and the structure of the beam shaping unit, a method of determining the designing parameters is discussed. Using this method, several illumination modes are realized, and simulation results show that all diffraction efficiencies reach up to 84%. The method of DOE manufacturing is analyzed at last, and it is proven to be feasible.

  18. Research development of thermal aberration in 193nm lithography exposure system

    NASA Astrophysics Data System (ADS)

    Wang, Yueqiang; Liu, Yong

    2014-08-01

    Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies.

  19. Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning

    NASA Astrophysics Data System (ADS)

    Chiu, M. C.; Lin, Benjamin Szu-Min; Tsai, M. F.; Chang, Y. S.; Yeh, M. H.; Ying, T. H.; Ngai, Chris; Jin, Jaklyn; Yuen, Stephen; Huang, Sem; Chen, Yongmei; Miao, Liyan; Tai, Kevin; Conley, Amiad; Liu, Ian

    2008-11-01

    High NA (1.35) Immersion litho runs into the fundamental limit of printing at 40-45nm half pitch (HP). The next generation EUVL tool is known to be ready not until year 2012. Double patterning (DP) technology has been identified as the extension of optical photolithography technologies to 3xnm and 2xnm half-pitch for the low k1 regime to fill in the gap between Immersion lithography and EUVL. Self Aligned Double Patterning (SADP) Technology utilized mature process technology to reduce risk and faster time to market to support the continuation of Moore's Law of Scaling to reduce the cost/function. SADP uses spacer to do the pitch splitting bypass the conventional double patterning (e.g. Litho-Freeze-Litho-Etch (LFLE), or Litho-Etch-Litho-Etch (LELE)) overlay problem. Having a tight overlay performance is extremely critical for NAND Flash manufacturers to achieve a fast yield ramp in production. This paper describes the challenges and accomplishment of a Line-By-Spacer (LBS) SADP scheme to pattern the 29nm half-pitch NAND Flash STI application. A 193nm Dry lithography was chosen to pattern on top of the amorphous carbon (a-C) film stack. The resist pattern will be transferred on the top a-C core layer follow by spacer deposition and etch to achieve the pitch splitting. Then the spacer will be used to transfer to the bottom a-C universal hardmask. This high selectivity a-C hardmask will be used to transfer the 29nm half-pitch pattern to the STI. Good within wafer CD uniformity (CDU) <2nm and line width roughness (LWR) <2nm for the 29nm half-pitch NAND FLASH STI were demonstrated as the benefits using double amorphous carbon hardmask layers. The relationships among the photoresist CDs, CD trimming , as-deposited spacer film thickness, spacer width and the final STI line/core space/gap space CDs will also be discussed in this paper since patterning is combining both lithography performance with CVD and Etch process performance. Film selection for amorphous carbon and

  20. Recent progress in 193-nm antireflective coatings

    NASA Astrophysics Data System (ADS)

    Meador, James D.; Guerrero, Douglas J.; Xu, Gu; Shao, Xie; Dobson, Norman; Claypool, James B.; Nowak, Kelly A.

    1999-06-01

    This paper presents the chemistries and properties of organic, spin-on, bottom antireflective coatings (BARCs) that are designed for 193 nm lithography. All of the BARCs are thermosetting and use dye-attached/incorporated polymers. A first generation product, NEXT, will soon be commercialized. NEXT is built form i-line and deep-UV chemistries with the polymeric constituent being a substitute novolac. This product provide outstanding resolution of 0.16 micrometers L/S with several 193 nm photoresists. Second generation chemical platforms under study include acrylics, polyesters, and polyethers with the 193 nm absorbing chromophore being an aromatic function. The performance of selected BARCs from the four platforms is described, including: optical properties, 193 nm litho, plasma etch rates, Prolith modeling data, spin-bowl and waste line compatibility, and ambient stability.

  1. Impact of water and top-coats on lithographic performance in 193-nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Kishimura, Shinji; Gronheid, Roel; Ercken, Monique; Maenhoudt, Mireille; Matsuo, Takahiro; Endo, Masayuki; Sasago, Masaru

    2005-05-01

    We have investigated the impact of water and top-coats on the resist in water immersion lithography by analyzing the dissolution behavior and the film constitution. We used a resist development analyzer (RDA) and a quartz crystal microbalance (QCM) to study the dissolution behavior. The film constitution was studied through the gradient shaving preparation (GSP) method in combination with TOF-SIMS. The GSP/TOF-SIMS method reveals the constitution of a top-coat/resist film. We found that, in a resist, the photo acid generator (PAG) anion at a depth of about 30 nm from the surface leached into water and a surface insoluble layer formed during immersion. The estimated amount of leaching was about 5% of the original content. The formation of an intermixing layer with a low dissolution rate was observed for some top-coat and resist combinations. The thickness of the intermixing layer and the formation behavior were made clear. We believe the intermixing layer was caused by the top-coat solvent eluting resist components. In a top-coat, a PAG existed within the top-coat and the PAG anion leached into the water. Top-coats blocked gaseous decomposed products from the resist film during PEB. These results are useful for estimating patterning characteristics and the defectivity due to materials for actual immersion exposure.

  2. Three-dimensional deep sub-wavelength defect detection using λ = 193 nm optical microscopy.

    PubMed

    Barnes, Bryan M; Sohn, Martin Y; Goasmat, Francois; Zhou, Hui; Vladár, András E; Silver, Richard M; Arceo, Abraham

    2013-11-04

    Optical microscopy is sensitive both to arrays of nanoscale features and to their imperfections. Optimizing scattered electromagnetic field intensities from deep sub-wavelength nanometer scale structures represents an important element of optical metrology. Current, well-established optical methods used to identify defects in semiconductor patterning are in jeopardy by upcoming sub-20 nm device dimensions. A novel volumetric analysis for processing focus-resolved images of defects is presented using simulated and experimental examples. This new method allows defects as narrow as (16 ± 2) nm (k = 1) to be revealed using 193 nm light with focus and illumination conditions optimized for three-dimensional data analysis. Quantitative metrics to compare two-dimensional and three-dimensional imaging indicate possible fourfold improvements in sensitivity using these methods.

  3. Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Shirakawa, Michihiro; Inoue, Naoki; Furutani, Hajime; Yamamoto, Kei; Goto, Akiyoshi; Fujita, Mitsuhiro

    2015-03-01

    Two approaches which achieve the further evolution of NTD (Negative Tone Development) process are shown in this article. One is ACCEL (Advanced Chemical Contrast Enhancement Layer) process that can improve the lithography performance and the other is DTD (Dual Tone Development) process that can shrink patterning pitch below the limit of single exposure process. ACCEL is an additionally provided layer which is coated on a surface of NTD resist film before exposure and removed by NTD developer. ACCEL can enhance the acid distribution and dissolution contrast of the NTD resist. In fact, lithography performances such as exposure latitude (EL) and DOF improved dramatically by applying ACCEL compared to the NTD resist without ACCEL. We consider that suppression of excessive acid diffusion and material transfer between the resist layer and the ACCEL layer are the causes of the contrast enhancement. DTD process is one of the simplest pitch shrink method which is achieved by repeating PTD and NTD process. Feasibility study of DTD patterning has been demonstrated so far. However, Exposure latitude margin and CDU performance were not sufficient for applying DTD to HVM. We developed the novel DTD specific resist under a new concept, and 32 nm half pitch (hp) contact hole (CH) pattern was successfully formed with enough margins. DTD line and space (L/S) patterning are also demonstrated and 24 nm hp L/S pattern can be resolved. k1 factors of DTD CH and L/S patterns reach to 0.20 and 0.15, respectively.

  4. Results from a new 193nm die-to-database reticle inspection platform

    NASA Astrophysics Data System (ADS)

    Broadbent, William H.; Alles, David S.; Giusti, Michael T.; Kvamme, Damon F.; Shi, Rui-fang; Sousa, Weston L.; Walsh, Robert; Xiong, Yalin

    2010-05-01

    A new 193nm wavelength high resolution reticle defect inspection platform has been developed for both die-to-database and die-to-die inspection modes. In its initial configuration, this innovative platform has been designed to meet the reticle qualification requirements of the IC industry for the 22nm logic and 3xhp memory generations (and shrinks) with planned extensions to the next generation. The 22nm/3xhp IC generation includes advanced 193nm optical lithography using conventional RET, advanced computational lithography, and double patterning. Further, EUV pilot line lithography is beginning. This advanced 193nm inspection platform has world-class performance and the capability to meet these diverse needs in optical and EUV lithography. The architecture of the new 193nm inspection platform is described. Die-to-database inspection results are shown on a variety of reticles from industry sources; these reticles include standard programmed defect test reticles, as well as advanced optical and EUV product and product-like reticles. Results show high sensitivity and low false and nuisance detections on complex optical reticle designs and small feature size EUV reticles. A direct comparison with the existing industry standard 257nm wavelength inspection system shows measurable sensitivity improvement for small feature sizes

  5. Binary 193nm photomasks aging phenomenon study

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sartelli, Luca; Pogliani, Carlo; Gough, Stuart; Sundermann, Frank; Miyashita, Hiroyuki; Hidenori, Yoshioka; Charras, Nathalie; Brochard, Christophe; Thivolle, Nicolas

    2011-05-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long period. These 193nm binary masks seem to be well-known but recent studies have shown surprising degrading effects, like Electric Field induced chromium Migration (EFM) [1] or chromium migration [2] [3] . Phase shift Masks (PSM) or Opaque MoSi On Glass (OMOG) might not be concerned by these effects [4] [6] under certain conditions. In this paper, we will focus our study on two layers gate and metal lines. We will detail the effects of mask aging, with SEM top view pictures revealing a degraded chromium edge profile and TEM chemical analyses demonstrating the growth of a chromium oxide on the sidewall. SEMCD measurements after volume production indicated a modified CD with respect to initial CD data after manufacture. A regression analysis of these CD measurements shows a radial effect, a die effect and an isolated-dense effect. Mask cleaning effectiveness has also been investigated, with sulphate or ozone cleans, to recover the mask quality in terms of CD. In complement, wafer intrafield CD measurements have been performed on the most sensitive structure to monitor the evolution of the aging effect on mask CD uniformity. Mask CD drift have been correlated with exposure dose drift and isolated-dense bias CD drift on wafers. In the end, we will try to propose a physical explanation of this aging phenomenon and a solution to prevent from it occurring.

  6. EUV reticle inspection with a 193nm reticle inspector

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Inderhees, Gregg; Yamamoto, Tetsuya; Lee, Isaac; Lim, Phillip

    2013-06-01

    The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the 2015 - 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL into HVM - blank and reticle defects are among the top items. To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm wavelength reticle inspection system - the Teron 610 Series (2010). This system has become the industry standard for 22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV blank and reticle inspection in R and D. To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for currently available 14nm / 2xhp generation EUV reticles. As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify areas for further improvement with the goal to be ready for pilot lines in early 2015.

  7. New single-layer positive photoresists for 193-nm photolithography

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Shimokawa, Tsutomu; Byers, Jeff D.; Medeiros, David R.; Willson, C. Grant; Niu, Qingshang J.; Frechet, Jean M. J.; Allen, Robert D.

    1997-07-01

    New series of chemically amplified, single layer, positive tone photoresists for 193 nm lithography have been developed. These resists were formulated from a series of cycloaliphatic co- and terpolymers of 2-methyl propyl bicyclo(2.2.1)hept-2- ene-5-carboxylate (carbo-tert-butoxynorbornene), bicyclo(2.2.1)hept-2-ene carboxylic acid (norbornene carboxylic acid), 8-methyl-8-carboxy tetracyclo(4,4,0.12,5,17,10)dodec-3-ene (methyltetracyclododecene carboxylic acid), norbornenemethanol, and maleic anhydride, which were synthesized by free radical, vinyl addition and ring opening metathesis polymerization techniques. The polymers derived from ring opening metathesis polymerization have bee successfully hydrogenated to provide yet another member of this group of materials. The cycloaliphatic polymer backbones provide etch resistance, mechanical properties and stability to radiation. The lithographic function is provided by carefully tailored pendant groups, which include an acid functionality that is masked by protecting groups that undergo acid catalyzed thermolysis as well as polar groups that influence the adhesion, wetability and dissolution properties of the polymer. The polymers are soluble in common organic solvents and have glass transition temperatures ranging from less than 60 degrees Celsius to higher than 250 degrees Celsius depending on their specific structure and mode of polymerization. They are at least as transparent at 193 nm as the corresponding acrylics. Their dry etch resistance varies with the formulation, but the base polymers etch more slowly than novolac under conditions typically used to pattern polysilicon. Upon exposure and baking, the resists have demonstrated high sensitivities (9-25 mJ/cm2), and 0.16 micrometer features have bean resolved.

  8. Investigation of electron beam stabilization of 193-nm photoresists

    NASA Astrophysics Data System (ADS)

    Kim, Myoung-Soo; Park, Jong-Woon; Kim, Hak-Joon; Jun, Bum-Jin; Gil, Myung-Goon; Kim, Bong-Ho; Ross, Matthew F.; Livesay, William R.

    2001-08-01

    193nm lithography is a promising candidate for the fabrication of microelectronic devices at the 130nm design rule and below. With smaller feature sizes, below 130nm, reduced resist thickness is essential because of the pattern collapse issues at high aspect ratios and the limited depth of focus with 193nm lithography tools. However, ArF resists have shown problems with etch selectivity, especially with the thin resist layers necessary. Additionally, pattern slimming during CD-SEM measurement, due to the nature of the resist chemistry, is an issue with feature stability after patterning. At present, many studies have been performed for improving the etch selectivity of resists and addressing line slimming issues. In this study, the electron beam stabilization process has been applied for improving the etch selectivity of resist patterns having an aspect ratio less than 3.0. The electron beam stabilization has been applied to two different ArF resist types; acrylate and cyclic-olefin- maleic-anhydride (COMA), which have been evaluated with respect to materials properties, etch selectivity, and line slimming performance as a function of electron beam dose and etch condition. Film shrinkage and the change in index of refraction were monitored as a function of stabilization condition. The chemical properties were characterized before and after electron beam stabilization using FTIR analysis. Blanket resist etch rate studies were performed as a function of stabilization condition for each resist type. Cross- sectional views of resist patterns after etch processing were also investigated to evaluate the improvement in etch resistance provided by the electron beam process. CD SEM measurements were performed to evaluate the impact of the stabilization process on the patterned features. The issue of line slimming has also been evaluated, with and without electron beam stabilization, for the different ArF resist materials considered. The results were compared with a Kr

  9. An anti-reflection coating for use with PMMA at 193 nm

    NASA Technical Reports Server (NTRS)

    Yen, Anthony; Smith, Henry I.; Schattenburg, M. L.; Taylor, Gary N.

    1992-01-01

    An antireflection coating (ARC) for use with poly(methyl methacrylate) (PMMA) resist for ArF excimer laser lithography (193 nm) was formulated. It consists of PMMA and a bis-azide, 4.4-prime-diazidodiphenyl sulfone (DDS) which crosslinks the film after deep UV (260 nm) irradiation and subsequent annealing. The reacted DDS then serves as the absorber for the 193 nm radiation and also prevents mixing of the ARC and PMMA during PMMA spin-coating and development. The effectiveness of the ARC was demonstrated by exposing, in PMMA, using achromatic holographic lithography, gratings of 100 nm period (about 50 nm linewidth) that are almost entirely free of an orthogonal standing wave.

  10. Evaluation of corneal ablation by an optical parametric oscillator (OPO) at 2.94 μm and an Er:YAG laser and comparison to ablation by a 193-nm excimer laser

    NASA Astrophysics Data System (ADS)

    Telfair, William B.; Hoffman, Hanna J.; Nordquist, Robert E.; Eiferman, Richard A.

    1998-06-01

    Purpose: This study first evaluated the corneal ablation characteristics of (1) an Nd:YAG pumped OPO (Optical Parametric Oscillator) at 2.94 microns and (2) a short pulse Er:YAG laser. Secondly, it compared the histopathology and surface quality of these ablations with (3) a 193 nm excimer laser. Finally, the healing characteristics over 4 months of cat eyes treated with the OPO were evaluated. Methods: Custom designed Nd:YAG/OPO and Er:YAG lasers were integrated with a new scanning delivery system to perform PRK myopic correction procedures. After initial ablation studies to determine ablation thresholds and rates, human cadaver eyes and in-vivo cat eyes were treated with (1) a 6.0 mm Dia, 30 micron deep PTK ablation and (2) a 6.0 mm Dia, -5.0 Diopter PRK ablation. Cadaver eyes were also treated with a 5.0 mm Dia, -5.0 Diopter LASIK ablation. Finally, cats were treated with the OPO in a 4 month healing study. Results: Ablation thresholds below 100 mJ/cm2 and ablation rates comparable to the excimer were demonstrated for both infrared systems. Light Microscopy (LM) showed no thermal damage for low fluence treatments, but noticeable thermal damage at higher fluences. SEM and TEM revealed morphologically similar surfaces for low fluence OPO and excimer samples with a smooth base and no evidence of collagen shrinkage. The Er:YAG and higher fluence OPO treated samples revealed more damage along with visible collagen coagulation and shrinkage in some cases. Healing was remarkably unremarkable. All eyes had a mild healing response with no stromal haze and showed topographic flattening. LM demonstrated nothing except a moderate increase in keratocyte activity in the upper third of the stroma. TEM confirmed this along with irregular basement membranes. Conclusions: A non- thermal ablation process called photospallation is demonstrated for the first time using short pulse infrared lasers yielding damage zones comparable to the excimer and healing which is also comparable to

  11. 193-nm radiation durability study of MoSi binary mask and resulting lithographic performance

    NASA Astrophysics Data System (ADS)

    Servin, Isabelle; Belledent, Jérôme; Pain, Laurent; Connolly, Brid; Sczyrba, Martin; Lamantia, Matt

    2011-05-01

    Dimensions on mask continue to shrink to keep up with the ITRS roadmap. This has implications on the material of choice for the blanks. For example, the new binary OMOG stack (Opaque MOSi on Glass) was successfully introduced to meet the mask specifications at the 32nm technology node. Obviously 193-nm optical lithography will be further used in production at even higher NA and lower k1 emphasizing, for example, the impact on wafer of any electromagnetic field migration effects. Indeed, long term radiation damage inducing CD growth and consequently, device yield loss, has already been reported [1, 2]. This mechanism, known as Electric Field induced Migration of chrome (EMF) often shortens the mask's lifetime. Here, a study was conducted to investigate the impact of intensive ArF scanner exposure both on final wafer and mask performances. The Si printed wafers measured with top-down CD-SEM were characterized with respect to CD uniformity, linearity, Sub Resolution Assist Feature (SRAF) printability through process window, MEEF, DOF, and OPC accuracy. The data was also correlated to advanced mask inspection results (e.g. AIMSTM) taken at the same location. More precisely, this work follows a preliminary study [1] which pointed out that OMOG is less sensitive to radiation than standard COG (Chrome On Glass). And, in this paper, we report on results obtained at higher energy to determine the ultimate lifetime of OMOG masks.

  12. Refractive index change during exposure for 193-nm chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Oh, Hye-Keun; Sohn, Young-Soo; Sung, Moon-Gyu; Lee, Young-Mi; Lee, Eun-Mi; Byun, Sung Hwan; An, Ilsin; Lee, Kun-Sang; Park, In-Ho

    1999-06-01

    Some of the important areas to be improved for lithography simulation are getting correct exposure parameters and determining the change of refractive index. It is known that the real and imaginary refractive indices are changed during exposure. We obtained these refractive index changes during exposure for 193 nm chemically amplified resists. The variations of the transmittance as well as the resist thickness were measured during ArF excimer laser exposure. We found that the refractive index change is directly related to the concentration of the photo acid generator and de-protected resin. It is important to know the exact values of acid concentration from the exposure parameters since a small difference in acid concentration magnifies the variation in the amplified de-protection during post exposure bake. We developed and used a method to extract Dill ABC exposure parameters for 193 nm chemically amplified resist from the refractive index change upon exposure.

  13. Inline detection of Chrome degradation on binary 193nm photomasks

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

    2013-09-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300

  14. Verification of optical proximity effect in immersion lithography

    NASA Astrophysics Data System (ADS)

    Suganaga, Toshifumi; Maejima, Shinroku; Hanawa, Tetsuro; Ishibashi, Takeo; Nakao, Shuji; Shirai, Seiichiro; Narimatsu, Koichiro; Suko, Kazuyuki; Shiraishi, Kenichi; Ishii, Yuki; Ando, Tomoyuki; Ohmori, Katsumi

    2006-03-01

    193 nm lithography is one of the most promising technologies for next-generation lithography and is being actively evaluated for making it practicable (1,2). First, we evaluated an immersion lithography tool (engineering evaluation tool (EET)) (3) and a dry lithography tool (S307E) with the same numerical aperture (NA = 0.85), manufactured by Nikon Corporation. As a result, an increase in the depth of focus (DOF) of the EET to 200 nm in comparison with the DOF (110 nm) of the dry exposure tool was confirmed in a 90 nm isolated space pattern. Next, the optical proximity effect (OPE) in this pattern was evaluated. Generally, when an immersion lithography tool is compared with a dry one with the same NA or both the tools, only an increase in the DOF is found. However, we confirmed that the OPE (The OPE of the 90 nm isolated space pattern is defined as the difference in the space width between a dense space and an isolated space.) of the dry exposure tool for the 90 nm isolated space pattern reduced from 33.1 nm to 14.1 nm by immersion lithography. As the effect of the reduction of 19 nm, the OPE reduced to 15.2 nm by the effect of the top coatings (TCs) and to 3.8 nm by the optical characteristics. An impact of about 5 nm on the OPE was confirmed by the process parameters-film thickness and the pre-bake temperature of the TC. In the case that the solvent was replaced with a high boiling point solvent, the impact changed from 5 to 20 nm further, the replacement of the solvent had a considerable impact on the OPE. However, this influence differs considerably according to the kind of resists; further, it was shown that the addition of acid materials and a change in the polymer base resulted in a high impact on the OPE for a certain resist. Thus, it was demonstrated that the selection of TC is very important for the OPE in immersion lithography.

  15. Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring

    NASA Astrophysics Data System (ADS)

    Jones, Chris M.; Kallingal, Chidam; Zawadzki, Mary T.; Jeewakhan, Nazneen N.; Kaviani, Nazila N.; Krishnan, Prakash; Klaum, Arthur D.; Van Ess, Joel

    2003-05-01

    The development of 100-nm design rule technologies is currently taking place in many R&D facilities across the world. For some critical alyers, the transition to 193-nm resist technology has been required to meet this leading edge design rule. As with previous technology node transitions, the materials and processes available are undergoing changes and improvements as vendors encounter and solve problems. The initial implementation of the 193-nm resits process did not meet the photolithography requirements of some IC manufacturers due to very high Post Exposure Bake temperature sensitivity and consequently high wafer to wafer CD variation. The photoresist vendors have been working to improve the performance of the 193-nm resists to meet their customer's requirements. Characterization of these new resists needs to be carried out prior to implementation in the R&D line. Initial results on the second-generation resists evaluated at Cypress Semicondcutor showed better CD control compared to the aelrier resist with comparable Depth of Focus (DOF), Exposure Latitute, Etch Resistance, etc. In addition to the standard lithography parameters, resist characterization needs to include defect density studies. It was found that the new resists process with the best CD control, resulted in the introduction of orders of magnitude higher yield limiting defects at Gate, Contact adn Local Interconnect. The defect data were shared with the resists vendor and within days of the discovery the resist vendor was able to pinpoint the source of the problem. The fix was confirmed and the new resists were successfully released to production. By including defect monitoring into the resist qualification process, Cypress Semiconductor was able to 1) drive correction actions earlier resulting in faster ramp and 2) eliminate potential yield loss. We will discuss in this paper how to apply the Micro Photo Cell Monitoring methodology for defect monitoring in the photolithogprhay module and the

  16. The Photochemistry of Cyano and Dicyanoacetylene at 193 nm.

    DTIC Science & Technology

    1987-07-28

    Halpern, L. Petway , R. Lu, W.M. Jackson, and V.R. McCrary and W. Nottingham Prepared for submission to the Journal of Chemical Physics Department of...CYANO- AND DICYANOACETYLENE AT 193 NM By J. B. Halpern% L. Petway , R. Lu W. M. Jackson , and V. R. McCrary Department of Chemistry Howard University

  17. Wavelength Independent Optical Lithography.

    DTIC Science & Technology

    1986-06-06

    lamp because it has a smooth, broadband output in the visible and near UV. High Density Optical Intormation Storage The NSOM concept can be combined...stringent control can be maintained over the temperature of the entire apparatus. Ideally, both of these methods should be used. - . * S P. .~ V: -:V- TwT ...DNA helixes : enantiomers of tris(4, 7-diphenylpheanthroline)ruthenium (II). Proc. Natl. Acad. Sci. U.S.A. 81, 7 (1984). 27. J.M. Fernandez, E. Neher

  18. Carbon Nanotube Scanning Probe for Surface Profiling of DUV and 193 nm Photoresist Pattern

    NASA Technical Reports Server (NTRS)

    Nguyen, Cattien V.; Stevens, Ramsey M. D.; Barber, Jabulani; Han, Jie; Meyyappan, M.; Sanchez, Martha I.; Larson, Carl; Hinsberg, William D.; Arnold, Jim (Technical Monitor)

    2001-01-01

    The continual scaling down of semiconductors to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscope coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable to resolve steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.

  19. Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications

    NASA Astrophysics Data System (ADS)

    de Klerk, Jos; Jorritsma, Louis; van Setten, Eelco; Droste, Richard; du Croo de Jongh, Richard; Hansen, Steven G.; Smith, Dan; van de Kerkhof, Mark A.; van de Mast, Frank; Graeupner, Paul; Rohe, Thomas; Kornitzer, Klaus

    2003-06-01

    As the semiconductor industry looks into the near future to extend manufacturing beyond 100nm, a new optical lithography system was developed by ASML. To achieve the aggressive industry roadmap and enable high volume manufacturing of sub 100nm resolutions at low k1 requires a number of challenges to be overcome. This paper reviews the design, system performance and measurements of a High NA, Dual stage 193nm TWINSCAN system planned for high volume manufacturing for 80nm applications. The overall system capability to effectively measure and control to a high precision the various attributes upon process control necessary for adequate CD control, in the low k1 regime will be shown. This paper will discuss the needed imaging control and the requirement for an extremely stable and matured platform. The system's dynamic, focus, leveling and dose delivery performance will be shown. Additionally, the automated control features of the optical system will be shown that enable the use of the various resolution enhancement techniques (RET) currently under development. The ability to optimize imaging performance with the control and flexibility in the pupil formation optics will be discussed. Finally, experimental results of an in-situ measurement technique with automated feedback control to optimize projection lens aberrations, which has a direct impact to imaging fidelity, will be shown. In summary, the lithographic system functionality and performance needed to achieve 80nm volume manufacturing will be presented.

  20. Advances in 193 nm excimer lasers for mass spectrometry applications

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph; Esser, Hans-Gerd; Bonati, Guido

    2016-03-01

    Ongoing progress in mass analysis applications such as laser ablation inductively coupled mass spectrometry of solid samples and ultraviolet photoionization mediated sequencing of peptides and proteins is to a large extent driven by ultrashort wavelength excimer lasers at 193 nm. This paper will introduce the latest improvements achieved in the development of compact high repetition rate excimer lasers and elaborate on the impact on mass spectrometry instrumentation. Various performance and lifetime measurements obtained in a long-term endurance test over the course of 18 months will be shown and discussed in view of the laser source requirements of different mass spectrometry tasks. These sampling type applications are served by excimer lasers delivering pulsed 193 nm output of several mJ as well as fast repetition rates which are already approaching one Kilohertz. In order to open up the pathway from the laboratory to broader market industrial use, sufficient component lifetimes and long-term stable performance behavior have to be ensured. The obtained long-term results which will be presented are based on diverse 193 nm excimer laser tube improvements aiming at e.g. optimizing the gas flow dynamics and have extended the operational life the laser tube for the first time over several billion pulses even under high duty-cycle conditions.

  1. An AC phase measuring interferometer for measuring dn/dT of fused silica and calcium fluoride at 193 nm

    SciTech Connect

    Shagam, R.N.

    1998-09-01

    A novel method for the measurement of the change in index of refraction vs. temperature (dn/dT) of fused silica and calcium fluoride at the 193 nm wavelength has been developed in support of thermal modeling efforts for the development of 193 nm-based photolithographic exposure tools. The method, based upon grating lateral shear interferometry, uses a transmissive linear grating to divide a 193 nm laser beam into several beam paths by diffraction which propagate through separate identical material samples. One diffracted order passing through one sample overlaps the undiffracted beam from a second sample and forms interference fringes dependent upon the optical path difference between the two samples. Optical phase delay due to an index change from heating one of the samples causes the interference fringes to change sinusoidally with phase. The interferometer also makes use of AC phase measurement techniques through lateral translation of the grating. Results for several samples of fused silica and calcium fluoride are demonstrated.

  2. Development of high coherence high power 193nm laser

    NASA Astrophysics Data System (ADS)

    Tanaka, Satoshi; Arakawa, Masaki; Fuchimukai, Atsushi; Sasaki, Yoichi; Onose, Takashi; Kamba, Yasuhiro; Igarashi, Hironori; Qu, Chen; Tamiya, Mitsuru; Oizumi, Hiroaki; Ito, Shinji; Kakizaki, Koji; Xuan, Hongwen; Zhao, Zhigang; Kobayashi, Yohei; Mizoguchi, Hakaru

    2016-03-01

    We have been developing a hybrid 193 nm ArF laser system that consists of a solid state seeding laser and an ArF excimer laser amplifier for power-boosting. The solid state laser consists of an Yb-fiber-solid hybrid laser system and an Er-fiber laser system as fundamentals, and one LBO and three CLBO crystals for frequency conversion. In an ArF power amplifier, the seed laser passes through the ArF gain media three times, and an average power of 110 W is obtained. As a demonstration of the potential applications of the laser, an interference exposure test is performed.

  3. Tellurite glass thin films on silica and polymer using UV (193 nm) pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Zhao, Zhanxiang; Jose, Gin; Steenson, Paul; Bamiedakis, Nikos; Penty, Richard V.; White, Ian H.; Jha, Animesh

    2011-03-01

    Erbium-doped tellurite glass thin films were deposited using excimer (193 nm) laser ablation onto two different types of substrates: silica and polymer-coated silica for engineering optical integrated active-passive devices. The deposition conditions were optimized for both substrates in order to produce high-quality rare-earth (Er3+) ion-doped glass thin films with low propagation loss. The optical and spectroscopic properties of the deposited films, namely transmittance, fluorescence, lifetime as well as refractive indices at 633 nm were measured and analysed in detail.

  4. Solid sampling with 193-nm excimer laser ablation

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph

    2007-02-01

    Reproducible and sensitive elemental analysis of solid samples is a crucial task in areas of geology (e.g. microanalysis of fluid inclusions), material sciences, industrial quality control as well as in environmental, forensic and biological studies. To date the most versatile detection method is mass-spectroscopic multi-element analysis. In order to obtain reproducible results, this requires transferring the solid sample into the gas-phase while preserving the sample's stoichiometric composition. Laser ablation in combination with Inductively Coupled Plasma-Mass Spectrometry (LA-ICP-MS) is a proven powerful technique to meet the requirements for reliable solid sample analysis. The sample is laser ablated in an air-tight cell and the aerosol is carried by an inert gas to a micro-wave induced plasma where its constituents are atomized and ionized prior to mass analysis. The 193 nm excimer laser ablation, in particular, provides athermal sample ablation with very precise lateral ablation and controlled depth profiling. The high photon energy and beam homogeneity of the 193 nm excimer laser system avoids elemental fractionation and permits clean ablation of even transmissive solid materials such as carbonates, fluorites and pure quartz.

  5. Tuning and simulating a 193-nm resist for 2D applications

    NASA Astrophysics Data System (ADS)

    Howard, William B.; Wiaux, Vincent; Ercken, Monique; Bui, Bang; Byers, Jeff D.; Pochkowski, Mike

    2002-07-01

    For some applications, the usefulness of lithography simulation results depends strongly on the matching between experimental conditions and the simulation input parameters. If this matching is optimized and other sources of error are minimized, then the lithography model can be used to explain printed wafer experimental results. Further, simulation can be useful in predicting the results or in choosing the correct set of experiments. In this paper, PROLITH and ProDATA AutoTune were used to systematically vary simulation input parameters to match measured results on printed wafers used in a 193 nm process. The validity of the simulation parameters was then checked using 3D simulation compared to 2D top-down SEM images. The quality of matching was evaluated using the 1D metrics of average gate CD and Line End Shortening (LES). To ensure the most accurate simulation, a new approach was taken to create a compound mask from GDSII contextual information surrounding an accurate SEM image of the reticle region of interest. Corrections were made to account for all metrology offsets.

  6. Lactones in 193 nm resists: What do they do?

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Truong, Hoa D.; Brock, Phil J.

    2008-03-01

    Lactones are almost ubiquitously employed in 193 nm resists to increase the polarity of hydrophobic alicyclic polymers. What else do lactones do in 193 nm resists? We studied the behavior of methacrylate (MA) resists consisting of different protecting groups, hexafluoroalcohols, and norbornane lactone methacrylate (NLM, 2-oxo-3-oxatricyclo[4.2.1.04,8]nonan-5-yl methacrylate). When the protecting group is large [ethylcyclooctyl (ECO) and methyladamantyl (MAd)], thinning of the resist film that occurs in highly exposed areas upon postexposure bake (PEB) is significantly smaller than what is expected from the polymer composition. When the concentration of isopropylhexafluoroalcohol methacrylate (iPrHFAMA) is increased in the ECOMA-NLM polymer, the thinning increases and reaches 100% of theory and the ECOMA-norbornenehexafluoroalcohol methacrylate (NBHFAMA) resist loses quantitative thickness in highly-exposed areas upon PEB at 90 °C. This indicates that small lactones which are more basic than esters can trap deprotection fragments especially when the protecting group is large. Such entrapment was detected by IR spectroscopy and also observed at temperatures as high as 200 °C in thermogravimetric analysis (TGA). Incorporation of lactone appears to decrease the bake temperature sensitivity and the sensitivity of the resist perhaps due to trapping of photochemically generated acids by basic lactone. The lactone ring can be hydrolyzed during aqueous base development but does not seem to affect the dissolution rate, indicating that hydrolysis occurs in aqueous base solution after dissolution. Poly(methacrylic acid-NLM) dissolves as fast as poly(methacrylic acid) in 0.26 N tetramethylammonium hydroxide (TMAH) aqueous solution. While exposed P(ECOMA 47-NLM 53) resist dissolves in 0.26 N developer at about the same rate as authentically prepared poly(methacrylic acid 47-NLM 53), the dissolution rate of highly-exposed P(MAdMA 44-NLM 56) resist is much slower, indicating

  7. Development of high coherence, 200mW, 193nm solid-state laser at 6 kHz

    NASA Astrophysics Data System (ADS)

    Nakazato, T.; Tsuboi, M.; Onose, T.; Tanaka, Y.; Sarukura, N.; Ito, S.; Kakizaki, K.; Watanabe, S.

    2015-02-01

    The high coherent, high power 193-nm ArF lasers are useful for interference lithography and microprosessing applications. In order to achieve high coherence ArF lasers, we have been developing a high coherence 193 nm solid state laser for the seeding to a high power ArF laser. We used the sum frequency mixing of the fourth harmonic (FH) of a 904-nm Ti:sapphire laser with a Nd:YVO4 laser (1342 nm) to generate 193-nm light. The laser system consists of a single-mode Ti:sapphire oscillator seeded by a 904-nm external cavity laser diode, a Pockels cell, a 6-pass amplifier, a 4-pass amplifier, a 2-pass amplifier and a wavelength conversion stage. The required repetition rate of 6 kHz corresponding to the ArF laser, along with a low gain at 904 nm induces serious thermal lens effects; extremely short focal lengths of the order of cm and bi-foci in the vertical and horizontal directions. From the analysis of thermal lens depending on pump intensity, we successfully compensated the thermal lens by dividing a 527-nm pump power with 15, 25 and 28 W to 3-stage amplifiers with even passes, resulting in the output power above 10W with a nearly diffraction limited beam. This 904-nm output was converted to 3.8 W in the second harmonic by LBO, 0.5 W in FH by BBO sequentially. Finally the output power of 230 mW was obtained at 193 nm by mixing the FH with a 1342-nm light in CLBO.

  8. Technique for cellular microsurgery using the 193-nm excimer laser.

    PubMed

    Palanker, D; Ohad, S; Lewis, A; Simon, A; Shenkar, J; Penchas, S; Laufer, N

    1991-01-01

    A new cell surgery technique has been developed to produce well-defined alterations in cells and tissue without detectable heating and/or other structural damage in the surroundings. The technique involves the use of an argon fluoride excimer laser, in the deep ultraviolet (UV) region of the spectrum at 193 nm, which is guided through a glass pipette filled with a positive air pressure. To demonstrate the method, holes were drilled in the zona pellucida of mouse oocytes. The diameter of the drilled hole was determined by the pipette tip size, and its depth by an energy emitted per pulse and number of pulses. Scanning electron microscopy of the drilled mouse oocytes showed uniform, round, well-circumscribed holes with sharp edges. Oocytes that had their zona pellucida drilled with this new method fertilized in vitro and developed to the blastocyst stage in a rate similar to that of control group. These results demonstrate the nonperturbing nature of this cold laser microsurgical procedure. In addition to the extension of our results for clinical in vitro fertilization purposes, such as enhancement of fertilization and embryo biopsy, there are wide-ranging possible uses of our method in fundamental and applied investigations that require submicron accuracy in cellular alteration.

  9. Measurement of initial absorption of fused silica at 193nm using laser induced deflection technique (LID)

    NASA Astrophysics Data System (ADS)

    Schönfeld, Dörte; Klett, Ursula; Mühlig, Christian; Thomas, Stephan

    2008-01-01

    The ongoing development in microlithography towards further miniaturization of structures creates a strong demand for lens material with nearly ideal optical properties. Beside the highly demanding requirements on homogeneity and stress induced birefringence (SIB), low absorption is a key factor. Even a small absorption is associated with a temperature increase and results in thermally induced local variations of refractive index and SIB. This could affect the achievable resolution of the lithographic process. The total absorption of the material is composed of initial absorption and of absorption induced during irradiation. Thus, the optimization of both improves the lifetime of the material. In principal, it is possible to measure transmission and scattering with a suitable spectrometer assembly and calculate absorption from them. However, owing to the influence of sample surfaces and errors of measurement, these methods usually do not provide satisfactory results for highly light-transmissive fused silica. Therefore, it is most desirable to find a technique that is capable of directly measuring absorption coefficients in the range of (1...10)•10 -4 cm -1 (base 10) directly. We report our first results for fused silica achieved with the LID technique. Besides a fused silica grade designed for 193 nm applications, grades with higher absorption at 193 nm were measured to test the LID technique. A special focus was set on the possibility of measuring initial absorption without the influence of degradation effects.

  10. Double patterning in lithography for 65nm node with oxidation process

    NASA Astrophysics Data System (ADS)

    Jeong, Eunsoo; Kim, Jeahee; Choi, Kwangsun; Lee, Minkon; Lee, Doosung; Kim, Myungsoo; Park, Chansik

    2008-03-01

    Recently, in order to increase the number of transistors in wafer by small feature size, optical lithography has been changed to low wavelength from 365nm to 193nm and high NA of 0.93. And further wavelength is aggressively shifting to 13.5nm for more small feature size, i.e., Extreme Ultra Violet Lithography(EUVL), a kind of Next Generation Lithography(NGL)1. And other technologies are developed such as water immersion(193nm) and photo resist Double Patterning(DP). Immersion lens system has high NA up to 1.3 due to high n of water(n=1.44 at 193nm), the parameter k1 is process constant, but 0.25 is a tough limit at a equal line and space, if we use immersion lens with 193nm wavelength than limit of resolution is 37nm. Especially, Double Exposure Technique(DET) process is widely studied because of the resolution enhancement ability using a same material and machine, despite of process complication. And SADP(Self Aligned Double Patten) is newly researched for overlay and LER(Line Edge Roughness) enhancement. In this paper, we illustrate the feasibility of the shift double pattern for 65nm-node flash using a 193nm light dipole source and the possibility of decrease minimum feature size using a property of silicon shrinkage during thermal oxidation process.

  11. Understanding dissolution behavior of 193nm photoresists in organic solvent developers

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Hyun; Park, Jong Keun; Cardolaccia, Thomas; Sun, Jibin; Andes, Cecily; O'Connell, Kathleen; Barclay, George G.

    2012-03-01

    Herein, we investigate the dissolution behavior of 193-nm chemically amplified resist in different organic solvents at a mechanistic level. We previously reported the effect of solvent developers on the negative tone development (NTD) process in both dry and immersion lithography, and demonstrated various resist performance parameters such as photospeed, critical dimension uniformity, and dissolution rate contrast are strongly affected by chemical nature of the organic developer. We further pursued the investigation by examining the dependence of resist dissolution behavior on their solubility properties using Hansen Solubility Parameter (HSP). The effects of monomer structure, and resist composition, and the effects of different developer chemistry on dissolution behaviors were evaluated by using laser interferometry and quartz crystal microbalance. We have found that dissolution behaviors of methacrylate based resists are significantly different in different organic solvent developers such as OSDTM-1000 Developer* and n-butyl acetate (nBA), affecting their resist performance. This study reveals that understanding the resist dissolution behavior helps to design robust NTD materials for higher resolution imaging.

  12. Depth-of-focus (DoF) analysis of a 193nm superlens imaging structure.

    PubMed

    Shi, Zhong; Kochergin, Vladimir; Wang, Fei

    2009-10-26

    We present a design of a 193 nm superlens imaging structure to enable the printing of 20 nm features. Optical image simulations indicate that the 20 nm resolution is feasible for both the periodic grating feature and the two-slit feature. Nominal depth-of-focus (DoF) position for both features is identified through the image contrast calculations. Simulations show that the two features have a common nominal dose at the nominal DoF to resolve 20 nm critical dimension when a suitable dielectric material is placed between mask and superlens layer. A DoF of micro8 nm is shown to be obtainable for the 20 nm half-pitch grating feature while the respective DoF for the two-slit feature is less than 8 nm which potentially can be enhanced by employing existing lithographic resolution enhancement techniques.

  13. Thin bilayer resists for 193-nm and future photolithography II

    NASA Astrophysics Data System (ADS)

    Hishiro, Yoshi; Hyatt, Michael

    2007-03-01

    Bilayer, Si-containing resists are a technique of interest and a strong candidate to replace chemical vapor deposition (CVD) hardmask processes for small critical dimensions (CDs). Previously, we proposed a very thin film approach using bilayer resists for future lithography, defined the requirements for the resists, and demonstrated 55nm transferred patterns with high aspect ratios using 2-beam interferometer exposure. In this paper, we have demonstrated smaller-than- 60nm transferred patterns with a high numerical aperture (NA) scanner, as well as 45nm and 40nm transferred patterns with a 2-beam system using a 20% Si-containing thin bilayer resist. Immersion scanner exposure and a 35nm CD with 2- beam system were also studied.

  14. Charting CEBL's role in mainstream semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Lam, David K.

    2013-09-01

    historically kept it out of mainstream fabs. Thanks to continuing EBDW advances combined with the industry's move to unidirectional (1D) gridded layout style, EBDW promises to cost-efficiently complement 193nm ArF immersion (193i) optical lithography in high volume manufacturing (HVM). Patterning conventional 2D design layouts with 193i is a major roadblock in device scaling: the resolution limitations of optical lithography equipment have led to higher mask cost and increased lithography complexity. To overcome the challenge, IC designers have used 1D layouts with "lines and cuts" in critical layers.1 Leading logic and memory chipmakers have been producing advanced designs with lines-and-cuts in HVM for several technology nodes in recent years. However, cut masks in multiple optical patterning are getting extremely costly. Borodovsky proposes Complementary Lithography in which another lithography technology is used to pattern line-cuts in critical layers to complement optical lithography.2 Complementary E-Beam Lithography (CEBL) is a candidate to pattern the Cuts of optically printed Lines. The concept of CEBL is gaining acceptance. However, challenges in throughput, scaling, and data preparation rate are threatening to deny CEBL's role in solving industry's lithography problem. This paper will examine the following issues: The challenges of massively parallel pixel writing The solutions of multiple mini-column design/architecture in: Boosting CEBL throughput Resolving issues of CD control, CDU, LER, data rate, higher resolution, and 450mm wafers The role of CEBL in next-generation solution of semiconductor lithography

  15. Focus vernier for optical lithography

    NASA Astrophysics Data System (ADS)

    Arnold, William H.; Barouch, Eytan; Hollerbach, Uwe; Orszag, Steven A.

    1993-08-01

    As the depth of focus of optical steppers grows smaller, it becomes more important to determine the position of best focus accurately and quickly. This paper describes the use of phase-shifted mask technology to form a focus vernier: a phase pattern on the stepper reticle which, when imaged in resist, can give both the magnitude and the direction of the focus error. In this, the focus vernier structure is analogous to 3overlay verniers. Thus the determination of focus error can be treated as an alignment problem in the z-axis. This technique is an improvement on previous schemes for the determination of best focus from resist images as it can indicate both the magnitude of the error and its direction in a single exposure.

  16. Expected innovations of optical lithography in the next 10 years

    NASA Astrophysics Data System (ADS)

    Owa, Soichi; Hirayanagi, Noriyuki

    2016-03-01

    In the past 10 years, immersion lithography has been the most effective high volume manufacturing method for the critical layers of semiconductor devices. Thinking of the next 10 years, we can expect continuous improvement on existing 300 mm wafer scanners with better accuracy and throughput to enhance the total output value per input cost. This value productivity, however, can be upgraded also by larger innovations which might happen in optical lithography. In this paper, we will discuss the possibilities and the impossibilities of potential innovation ideas of optical lithography, which are 450 mm wafer, optical maskless, multicolor lithography, and metamaterial.

  17. The art of photomask materials for low-k1-193nm lithography

    NASA Astrophysics Data System (ADS)

    Hashimoto, Masahiro; Iwashita, Hiroyuki; Mitsui, Hideaki

    2009-04-01

    The resolution of photomask patterns were improved with a hardmask (HM) system. The system which is thin Sicompounds layer is easily etched by the hyper-thin resist (below 100nm thickness). The HM material has sufficient etching selectivity against the chrome-compounds which is the second layer chrome absorber for the phase-shifter. This hardmask layer has been completely removed during the phase-shifter etching. It means that the conventional phase-shit mask (PSM) has been made with the ultimately high-resolution without configuration changes. Below 50nm resolution of PSM was made with 90nm thickness resist on HM layer in this paper. The CD bias between a resist feature CD and a chrome feature CD was almost zero (below 1nm) in the optimized etching condition. We confirmed that the mask performances were the equal to COMS (Cr-HM on MoSi binary mask) in resolution and CD linearity. The performances of hardmask blanks will be defined by resist performance because of almost zero bias.

  18. Absorption coefficients for water vapor at 193 nm from 300 to 1073 K

    NASA Technical Reports Server (NTRS)

    Kessler, W. J.; Carleton, K. L.; Marinelli, W. J.

    1993-01-01

    Measurements of the water absorption coefficient at 193 nm from 300 to 1073 K are reported. The measurements were made using broadband VUV radiation and a monochromator-based detection system. The water vapor was generated by a saturator and metered into a flowing, 99 cm absorption cell via a water vapor mass flow meter. The 193 nm absorption coefficient measurements are compared to room temperature and high temperature shock tube measurements with good agreement. The absorption can be parameterized by a nu3 vibrational mode reaction coordinate and the thermal population of the nu3 mode.

  19. Simulations of immersion lithography

    NASA Astrophysics Data System (ADS)

    Bai, Min; Lei, Junjiang; Zhang, Lin; Shiely, James P.

    2005-05-01

    Immersion lithography has been regarded as the most viable contender to extend the resolution capability of optical lithography using 193nm wavelength. In parallel with the tremendous effort of overcoming the engineering challenges in immersion, support from modeling and simulations is strongly needed. Although immersion simulation has become available through a number of simulation tools, we need to investigate the model generation and its compatibility within the context of full-chip optical proximity correction (OPC). In this paper, we will describe the physics of a full vector model that is necessary for the high NA optical modeling under immersion. In this full vector model, we consider not only the plane wave decomposition as light travels from the mask to wafer plane, but also the refraction, transmission and reflection of light through a thin film stack on the wafer. We integrated this comprehensive vector model into Synopsys OPC modeling tool ProGen. Through ProGen simulation results, we will discuss several important merits of immersion lithography, as well as the full portability of immersion models into OPC process flow.

  20. High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester finctionalities

    NASA Astrophysics Data System (ADS)

    Khojasteh, Mahmoud; Chen, K. Rex; Kwong, Ranee W.; Lawson, Margaret C.; Varanasi, Pushkara R.; Patel, Kaushal S.; Kobayashi, Eiichi

    2003-06-01

    ArF lithography has been selected as the imaging method for the 90 nm technology node. Manufacturing related issues will have to be addressed when designing advanced 193 nm resists that are production worthy. Post exposure bake (PEB) sensitivity, dissolution properties and process window are some issues that need continuous improvement. Initially our investigation focused on a cyclic olefin (CO) platform which led us to a better understanding of the relationship between polymer structure and physical properties and how to improve cyclic olefin resist performance. Since then we have developed a new class of acrylate polymers with pendant "spaced ester" functionality. We have investigated the potential use of "spaced ester" functionality on improving the lithographic performance of CO and acrylate resist platforms. We have found that with "spaced ester" as pending group in CO polymer structures, it can lower the Tg and improve the dissolution properties of the CO resists. Resists formulated with acrylate containing "spaced ester" group exhibit excellent PEB temperature sensitivity (1 nm/°C), and are soluble in PGMEA. In addition, we have demonstrated sub-100 nm resolution with excellent process window through formulation optimization for acrylate based resists. This paper will focus on the "spaced ester" based polymer design, material properties; resist characteristics, and the lithographic performance for logic dense line applications.

  1. Studies on a cross-linking type positive 193nm photoresist material

    NASA Astrophysics Data System (ADS)

    Wang, Liyuan; Guo, Xin; Chu, Zhanxing; Wang, Wenjun

    2006-03-01

    A kind of diacid, acrylpimaric acid, with condensed alicyclic structure and good film-forming property, was prepared by the Diels-Alder reaction of abietic acid and acrylic acid. In their solid film, the diacid can react with divinyl ether, such as 1,3-divinyloxyethoxybenzene when baked above 80 °C and become insoluble in dilute aqueous base. Thus formed compound can be quickly decomposed at the presence of strong acid generated by PAG above 100 °C and become easily soluble in dilute aqueous base. A positive photoresist can be formed by the diacid, divinyl ether and PAG. The measured photosensitivity is less than 50 mj/cm2 when exposed to low pressure Hg lamp (254nm). The diacid mixture displayed lower transparency than estimated at 193 nm and should be further purified to be used in 193 nm photoresist.

  2. Long Coherence Length 193 nm Laser for High-Resolution Nano-Fabrication

    DTIC Science & Technology

    2008-06-27

    ns pulses, considering Kerr self phase modulation and perhaps Kramers- Kronig self phase modulation as well? What conversion efficiency to 193.4 nm is...Kramers- Kronig phase related to Actinix 31 6/27/2008 Long Coherence Length 193-nm Laser for High-Resolution Nano-Fabrication DARPA Phase I STTR Final...by. Usually the n 2 contribution is the larger of the two, and better characterized. I do not include a Kramers- Kronig contribution in the

  3. Comparison of acid-generating efficiencies in 248 and 193-nm photoresists

    NASA Astrophysics Data System (ADS)

    Cameron, James F.; Chan, Nicholas; Moore, Kathryn; Pohlers, Gerd

    2001-08-01

    Photoacid generation is a critical step in the application of chemically amplified (CA) resist technology. During the key exposure step, a catalytic amount of a strong Bronsted acid is released within these resists. The photoacid is subsequently used in a post-exposure bake step to catalytically react with the resist polymer. In the case of a positive tone resist, an acid sensitive polymer is deprotected to render the exposed areas soluble in dilute aqueous base thereby allowing for pattern development. As the semicondutor industry beings to focus on developing 193 nm photoresists for production, it si important to identify and understand differences between prototype 193nm CA resists and current state of the art 248nm production worth photoresists. The major difference between 193 and 248 nm photoresists is the exposure wavelength, which isr educed to achieve higher resolution based on the Rayleigh equation. However, this change in wavelength has several ramifications: Firstly, the tried, tested and true phenolic polymers used in DUV resists are too absorbent to be used fo 193nm application and had to be replaced by low absorbing, non-aromatic systems. Second, since even these new platforms are still more absorbing at 193 nm than the phenolic matrices are at 248nm, the PAG loading had to be lowered significantly in order to keep the overall absorbance of the resist down. This paper descibes the results of our systematic studies on understanding the reasons for observed differences in photoacid generating efficincy between 193 and 248nm chemically amplified resist systems. First the wavelength effect is studied by comparing the relative acid generating efficiency of onium type PAGs in a prototype 193nm and a DUV photoresist at both 193 nm and 248 nm exposure. Second, the photoacid generating efficiency for these PAGs at 238 nm is compared in both phenolic and non-phenolic based photoresists to probe resist polymer matrix effects. Third, these experiments were

  4. Interference Lithography for Optical Devices and Coatings

    DTIC Science & Technology

    2010-01-01

    fabricate self- healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to... catalyzed by moisture in air; if the indices of the two polymers are matched, the coatings turn transparent after healing. Interference lithography...self- healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to sequester

  5. Application of optical CD metrology for alternative lithography

    NASA Astrophysics Data System (ADS)

    Asano, Masafumi; Kawamoto, Akiko; Matsuki, Kazuto; Godny, Stephane; Lin, Tingsheng; Wakamoto, Koichi

    2013-04-01

    Directed self-assembly (DSA) and nanoimprint lithography (NIL) have been widely developed for low-cost nanoscale patterning. Although they are currently regarded as "alternative lithography," some papers show their potential to be candidates for next-generation lithography (NGL). To actualize the potential, the contribution of metrology engineers is necessary. Since the characteristics of the lithography techniques are different from those of conventional lithography, new metrology schemes correlated with each characteristic are required. In DSA of block copolymer (BCP), a guide is needed to control the direction and position of BCP. Therefore, it is necessary to monitor the relationship between the guide and the BCP pattern. Since the depth of guide or the coating thickness variation of BCP over guide influences the behavior of phase separation of BCP, 3D metrology becomes increasingly important. In NIL, residual resist thickness (RLT) underneath the pattern should be measured because its variation affects the CD variation of transferred pattern. 3D metrology is also important in NIL. Optical critical dimension (OCD) metrology will be a powerful tool for 3D metrology. In this work, some applications of OCD for alternative lithography have been studied. For DSA, we have tried to simultaneously monitor the guide and BCP pattern in a DSA-based contact hole shrinking process. Sufficient measurement accuracy for CD and shapes for guide and BCP patterns was achievable. For NIL, sufficient sensitivity to RLT measurement was obtained.

  6. Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm

    NASA Astrophysics Data System (ADS)

    Lin, Cheng-ming; Chang, Keh-wen; Lee, Ming-der; Loong, Wen-An

    1999-07-01

    Abstract-Five materials which are PdSixOy, CrAlxOy, SiNx, TiSixNy, and TiSixOyNz as absorptive shifters for attenuated phase-shifting mask in 193 nm wavelength lithography are presented. PdSixOy films were deposited by dual e-gun evaporation. CrAlxOy, TiSixNy and TiSixOyNz films were formed by plasma sputtering and SiNx films were formed with LPCVD. All of these materials are shown to be capable of achieving 4 percent - 15 percent transmittance in 193 nm with thickness that produce a 180 degrees phase shift. Under BCl3:Cl2 equals 14:70 sccm; chamber pressure 5 mtorr and RF power 1900W, the dry etching selectivity of TiSixNy over DQN positive resist and fused silica, were found to be 2:1 and 4,8:1 respectively. An embedded layer TiSixNy with 0.5 micrometers line/space was successfully patterned.

  7. Collateral damage-free debridement using 193nm ArF laser

    NASA Astrophysics Data System (ADS)

    Wynne, James J.; Felsenstein, Jerome M.; Trzcinski, Robert; Zupanski-Nielsen, Donna; Connors, Daniel P.

    2011-03-01

    Burn eschar and other necrotic areas of the skin and soft tissue are anhydrous compared to the underlying viable tissue. A 193 nm ArF excimer laser, emitting electromagnetic radiation at 6.4 eV at fluence exceeding the ablation threshold, will debride such necrotic areas. Because such radiation is strongly absorbed by aqueous chloride ions through the nonthermal process of electron photodetachment, debridement will cease when hydrated (with chloride ions) viable tissue is exposed, avoiding collateral damage to this tissue. Such tissue will be sterile and ready for further treatment, such as a wound dressing and/or a skin graft.

  8. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

    NASA Astrophysics Data System (ADS)

    Soltani, A.; Barkad, H. A.; Mattalah, M.; Benbakhti, B.; De Jaeger, J.-C.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; BenMoussa, A.; Giordanengo, B.; Hochedez, J.-F.

    2008-02-01

    Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.

  9. Structural design of new alicyclic acrylate polymers with androstane moiety for 193-nm resist

    NASA Astrophysics Data System (ADS)

    Aoai, Toshiaki; Sato, Kenichiro; Kodama, Kunihiko; Kawabe, Yasumasa; Nakao, Hajime; Yagihara, Morio

    1999-06-01

    Synthesis of new alicyclic (meth)acrylate polymers containing androstane moieties, especially cholic acid derivatives, and their characteristics were investigated for 193nm single layer resists. Among the derivatives, a work of adhesion, Ohnishi and ring parameters were used as measures for the adhesion and the dry-etching resistance in this study. In the synthesis of the polymers, the use of 3- (beta) -methacryloyoxy-deoxycholic acid, which is the inverse configuration against the original 3-(alpha) -structure, was effective as a monomer, because the steric hindrance at 3- (alpha) -position degraded its polymerization ability. The polymers partially protected by acid labile groups showed a satisfactory adhesion, which was probably due to the hydrophilic hydroxyl group at the 12-position and the carboxyl group linked at the 17-position, and a good dry- etching resistance. On the lithographic imaging with these polymers, the reduction of the side reaction on the acid decomposition and also the control of the flexibility on the polymers largely affected their performance. THe adjustment of the Tg values of the polymers by the co-polymerization and the change of the polymer backbone from the methacrylate to acrylate structure performed well on imaging under 193nm exposure.

  10. Nodal line-scanning method for maskless optical lithography.

    PubMed

    Johnson, Kenneth C

    2014-12-01

    Maskless optical lithography can improve the economics and performance of multi-patterning by eliminating photomasks and by simplifying the lithography exposure technology. It could also potentially eliminate the need for multi-patterning by enabling dual-wavelength, nonlinear optical recording methods. High-resolution, maskless patterning can be achieved with a scanned-spot-array system in which modulated, diffraction-limited focus spots write the exposure pattern. Each spot has a central zero-intensity interference null along a line parallel to the scan direction for printing sub-resolution line patterns. High throughput can be achieved at the comparatively low repetition rate of excimer lasers (e.g., 6 kHz). The low repetition rate simplifies the optical modulation technology, enabling the use of supplemental modulation controls including dynamic gray-level and beam-centration controls for resolution enhancement.

  11. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Conde, J. C.; Chiussi, S.; Serra, C.; González, P.

    2016-01-01

    193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3 μm diameter and around 25 nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240 mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2 μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.

  12. Controlling H atom production in the 193 nm laser photolysis of triethylarsenic

    NASA Astrophysics Data System (ADS)

    Xu, Xiaodong; Deshmukh, Subhash; Brum, Jeffrey L.; Koplitz, Brent

    1991-05-01

    We report on the production of atomic hydrogen subsequent to the 193 nm photolysis of triethylarsenic (TEAs) using an excimer laser. The H atoms are probed via two-photon (121.6+364.7 nm) ionization, and the resulting H atom Doppler profile at Lyman-α is presented. Photolysis power dependence studies demonstrate that substantial H atom formation occurs at relatively low laser powers. However, the H atom signal actually begins to diminish as the photolysis laser power is increased beyond ˜70 MW/cm2. Correlations with time-of-fight mass spectral data suggest that ion channels are being accessed. The possible mechanisms for TEAs excitation that lead to H atom formation/depletion are presented, and the implications of these observations on controlling carbon incorporation in the laser-enhanced growth of films of GaAs, AlGaAs, etc. are discussed.

  13. Three-body dissociations: The photodissociation of dimethyl sulfoxide at 193 nm

    SciTech Connect

    Blank, D.A.; North, S.W.; Stranges, D.

    1997-04-01

    When a molecule with two equivalent chemical bonds is excited above the threshold for dissociation of both bonds, how the rupture of the two bonds is temporally coupled becomes a salient question. Following absorption at 193 nm dimethyl sulfoxide (CH{sub 3}SOCH{sub 3}) contains enough energy to rupture both C-S bonds. This can happen in a stepwise (reaction 1) or concerted (reaction 2) fashion where the authors use rotation of the SOCH{sub 3} intermediate prior to dissociation to define a stepwise dissociation: (1) CH{sub 3}SOCH{sub 3} {r_arrow} 2CH{sub 3} + SO; (2a) CH{sub 3}SOCH{sub 3} {r_arrow} CH{sub 3} + SOCH{sub 3}; and (2b) SOCH{sub 3} {r_arrow} SO + CH{sub 3}. Recently, the dissociation of dimethyl sulfoxide following absorption at 193 nm was suggested to involve simultaneous cleavage of both C-S bonds on an excited electronic surface. This conclusion was inferred from laser induced fluorescence (LIF) and resonant multiphoton ionization (2+1 REMPI) measurements of the internal energy content in the CH{sub 3} and SO photoproducts and a near unity quantum yield measured for SO. Since this type of concerted three body dissociation is very interesting and a rather rare event in photodissociation dynamics, the authors chose to investigate this system using the technique of photofragment translational spectroscopy at beamline 9.0.2.1. The soft photoionization provided by the VUV undulator radiation allowed the authors to probe the SOCH{sub 3} intermediate which had not been previously observed and provided good evidence that the dissociation of dimethyl sulfoxide primarily proceeds via a two step dissociation, reaction 2.

  14. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography.

    PubMed

    Tiddia, Mariavitalia; Mula, Guido; Sechi, Elisa; Vacca, Annalisa; Cara, Eleonora; De Leo, Natascia; Fretto, Matteo; Boarino, Luca

    2016-12-01

    In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown.

  15. Laser ablation of ceramic Al{sub 2}O{sub 3} at 193 nm and 248 nm: The importance of single-photon ionization processes

    SciTech Connect

    Pelaez, R. J.; Afonso, C. N.; Bator, M.; Lippert, T.

    2013-06-14

    The aim of this work is to demonstrate that single-photon photoionization processes make a significant difference in the expansion and temperature of the plasma produced by laser ablation of ceramic Al{sub 2}O{sub 3} in vacuum as well as to show their consequences in the kinetic energy distribution of the species that eventually will impact on the film properties produced by pulsed laser deposition. This work compares results obtained by mass spectrometry and optical spectroscopy on the composition and features of the plasma produced by laser ablation at 193 nm and 248 nm, i.e., photon energies that are, respectively, above and below the ionization potential of Al, and for fluences between threshold for visible plasma and up to Almost-Equal-To 2 times higher. The results show that the ionic composition and excitation of the plasma as well as the ion kinetic energies are much higher at 193 nm than at 248 nm and, in the latter case, the population of excited ions is even negligible. The comparison of Maxwell-Boltzmann temperature, electron temperatures, and densities of the plasmas produced with the two laser wavelengths suggests that the expansion of the plasma produced at 248 nm is dominated by a single population. Instead, the one produced at 193 nm is consistent with the existence of two populations of cold and hot species, the latter associated to Al{sup +} ions that travel at the forefront and produced by single photon ionization as well as Al neutrals and double ionized ions produced by electron-ion impact. The results also show that the most energetic Al neutrals in the plasma produced at the two studied wavelengths are in the ground state.

  16. Large-Area Zone Plate Fabrication with Optical Lithography

    SciTech Connect

    Denbeaux, G.

    2011-09-09

    Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/{Delta}E = 700[1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/{Delta}E = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

  17. Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Truong, Hoa D.; Burns, Sean D.; Pfeiffer, Dirk; Huang, Wu-Song; Khojasteh, Mahmoud M.; Varanasi, P. Rao; Lercel, Mike

    2005-05-01

    Polysilsesquioxane-based 193 nm positive bilayer resists are described. In this design Si for etch resistance is placed in every repeat unit and acid-labile protected and acidic groups (and polar units) are in the side chain, allowing to incorporate each lithographically critical functionality in sufficient quantity. Fluoroalcohol is employed as an acid group instead of carboxylic acid because of its more attractive dissolution properties. Polymers were carefully analyzed by 19F, 13C, and 29Si NMR to determine composition and to quantify residual acetyl, silanol, and Q/T. Hydrogen-bonding between tertiary ester and fluoroalcohol in the polysilsesquioxanes was investigated by FT-IR and the effect of lactone incorporation on the thermal deprotection temperature elucidated. In order to better understand the dissolution behavior of exposed resist films, the silsesquioxane resist polymers were partially (ca. 30%) and fully deprotected in solution with acid and their dissolution kinetics investigated by using a quartz crystal microbalance (QCM). It has been found that the exposed areas of the silsesquioxane resists can have a very fast dissolution rate (Rmax) of >20,000 A/sec (or even >100,000 A/sec). Heating the fully deprotected model polymers to 150°C did not reduce the dissolution rate much, suggesting thermal condensation of silanol end groups is insignificant. Model deprotected polymers containing triphenylsulfonium nonaflate were exposed to 254 nm radiation, baked, and subjected to QCM measurements in order to determine whether or not acid-catalyzed silanol condensation would reduce the dissolution rate. A combination of high dose and high temperature bake resulted in significant reduction of the dissolution rate in the silsesquioxane polymer containing a small trifluoroalcohol. However, the dissolution behavior of the polymer bearing a bulky norbornene hexafluoroalcohol was unaffected by exposure and bake. Chemical and development contrast curves were generated

  18. Low-cost method for producing extreme ultraviolet lithography optics

    DOEpatents

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  19. Self-cleaning optic for extreme ultraviolet lithography

    DOEpatents

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  20. Wavelength Independent Optical Microscopy and Lithography

    DTIC Science & Technology

    1987-10-31

    Leviatan , Y., J. Appl. Phys. 60, 1577 (1986). 7. Harootunian, A., Near-Field Scanning Optical Microscopy and Raman Microscopy, Cornell University Ph.D...although the approach used may not be valid in the Another potential problem concerns the effect of the near field. More recently, Leviatan 21...Massey, "Microscopy and Pattern Generation With Scanned Evanescent Waves," AppL. Opt. 23, 658 (1984). The authors wish to thank Yehuda Leviatan for 21

  1. Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

    SciTech Connect

    Pargon, E.; Menguelti, K.; Martin, M.; Bazin, A.; Joubert, O.; Lill, T.

    2009-05-01

    In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to the so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, and ellipsometry). By using windows with different cutoff wavelengths patched on the photoresist film, the role of the plasma vacuum ultraviolet (VUV) light on the resist modifications is clearly outlined and distinguished from the role of radicals and ions from the plasma. The analyses reveal that both plasma cure treatments induce severe surface and bulk chemical modifications of the resist films. The synergistic effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm), while the plasma VUV light (110-210 nm) is clearly identified as being responsible for ester and lactone group removal from the resist bulk. As the resist modification depth depends strongly on the wavelength penetration into the material, it is found that HBr plasma cure that emits near 160-170 nm can chemically modify the photoresist through its entire thickness (240 nm), while the impact of Ar plasmas emitting near 100 nm is more limited. In the case of HBr cure treatment, Raman and ellipsometry analyses reveal the formation of sp{sup 2} carbon atoms in the resist bulk, certainly thanks to hydrogen diffusion through the resist film assisted by the VUV plasma light.

  2. Top-coatless 193nm positive-tone development immersion resist for logic application

    NASA Astrophysics Data System (ADS)

    Liu, Lian Cong; Yeh, Tsung Ju; Lin, Yeh-Sheng; Huang, Yu Chin; Kuo, Chien Wen; Huang, Wen Liang; Lin, Chia Hung; Yu, Chun Chi; Hsu, Ray; Wan, I.-Yuan; Lin, Jeff; Im, Kwang-Hwyi; Lim, Hae Jin; Jeon, Hyun K.; Suzuki, Yasuhiro; Xu, Cheng Bai

    2015-03-01

    In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.

  3. Photodissociation of the Propargyl (C3D3) Radicals at 248 nm and 193 nm

    SciTech Connect

    Neumark., D.M.; Crider, P.E.; Castiglioni, L.; Kautzman, K.K.

    2009-01-21

    The photodissociation of perdeuterated propargyl (D{sub 2}CCCD) and propynyl (D{sub 3}CCC) radicals was investigated using fast beam photofragment translational spectroscopy. Radicals were produced from their respective anions by photodetachment at 540 nm and 450 nm (below and above the electron affinity of propynyl). The radicals were then photodissociated by 248 nm or 193 nm light. The recoiling photofragments were detected in coincidence with a time- and position-sensitive detector. Three channels were observed: D{sub 2} loss, CD + C{sub 2}D{sub 2}, and CD{sub 3} + C{sub 2}. Obervation of the D loss channel was incompatible with this experiment and was not attempted. Our translational energy distributions for D{sub 2} loss peaked at nonzero translational energy, consistent with ground state dissociation over small (< 1 eV) exit barriers with respect to separated products. Translational energy distributions for the two heavy channels peaked near zero kinetic energy, indicating dissociation on the ground state in the absence of exit barriers.

  4. The stability of allyl radicals following the photodissociation of allyl iodide at 193 nm.

    SciTech Connect

    Fan, H.; Pratt, S. T.; Chemistry

    2006-01-01

    The photodissociation of allyl iodide (C{sub 3}H{sub 5}I) at 193 nm was investigated by using a combination of vacuum-ultraviolet photoionization of the allyl radical, resonant multiphoton ionization of the iodine atoms, and velocity map imaging. The data provide insight into the primary C-I bond fission process and into the dissociative ionization of the allyl radical to produce C{sub 3}H{sup 3+}. The experimental results are consistent with the earlier results of Szpunar et al. [J. Chem. Phys. 119, 5078 (2003)], in that some allyl radicals with internal energies higher than the secondary dissociation barrier are found to be stable. This stability results from the partitioning of available energy between the rotational and vibrational degrees of freedom of the radical, the effects of a centrifugal barrier along the reaction coordinate, and the effects of the kinetic shift in the secondary dissociation of the allyl radical. The present results suggest that the primary dissociation of allyl iodide to allyl radicals plus I*({sup 2}P{sub 1/2}) is more important than previously suspected.

  5. Product channels in the 193-nm photodissociation of HCNO (fulminic acid)

    NASA Astrophysics Data System (ADS)

    Feng, Wenhui; Hershberger, John F.

    2016-06-01

    IR diode laser spectroscopy was used to detect the products of HCNO (fulminic acid) photolysis at 193 nm. Six product channels are energetically possible at this photolysis wavelength: O + HCN, H + NCO/CNO, CN + OH, CO + NH, NO + CH and HNCO. In some experiments, isotopically labeled 15N18O, C2D6 or C6H12 reagents were included into the photolysis mixture in order to suppress and/or redirect possible secondary reactions. HCN, OC18O, 15N15NO, CO, DCN and HNCO molecules were detected upon laser photolysis of HCNO/reagents/buffer gas mixtures. Analysis of the yields of product molecules leads to the following photolysis quantum yields: ϕ1a (O + HCN) = 0.38 ± 0.04, ϕ1b (H + (NCO)) = 0.07 ± 0.02, ϕ1c (CN + OH) = 0.24 ± 0.03, ϕ1d (CO + NH(a1Δ)) < 0.22 ± 0.1, ϕ1e (HNCO) = 0.02 ± 0.01 and ϕ1f (CH + NO) = 0.21 ± 0.1, respectively.

  6. Improving vacuum-UV (VUV) photolysis of organic compounds in water with a phosphor converted xenon excimer lamp emitting at 193 nm.

    PubMed

    Schulze-Hennings, U; Pötschke, L; Wietor, C; Bringmann, S; Braun, N; Hayashi, D; Linnemann, V; Pinnekamp, J

    A novel vacuum ultraviolet excimer lamp emitting light at 193 nm was used to investigate the degradation of organic micropollutants in ultrapure water and wastewater treatment plant (WWTP) effluent. Overall, light at 193 nm proved to be efficient to degrade the investigated micropollutants (diclofenac, diatrizoic acid, sulfamethoxazole). Experiments with WWTP effluent proved the ability of radiation at 193 nm to degrade micropollutants which are hardly removed with commonly used oxidation technologies like ozonation (diatrizoic acid, ethylenediaminetetraacetic acid, perfluorooctanoic acid, and perfluorooctanesulfonic acid).

  7. Optical laue diffraction on photonic structures designed by laser lithography

    NASA Astrophysics Data System (ADS)

    Samusev, K. B.; Rybin, M. V.; Lukashenko, S. Yu.; Limonov, M. F.

    2016-06-01

    Two-dimensional photonic crystals with square symmetry C 4v were obtained using the laser lithography method. The structure of these samples was studied by scanning electron microscopy. Optical Laue diffraction for monochromatic light was studied experimentally depending on the incidence angle of laser beam and lattice constant. Interpretation of the observed diffraction patterns is given in the framework of the Laue diffraction mechanism for an one-dimensional chain of scattering elements. Red thresholds for different diffraction orders were determined experimentally and theoretically. The results of calculations are in an excellent agreement with experiment.

  8. Detection of OH radical in laser induced photodissociation of tetrahydrofuran at 193 nm

    NASA Astrophysics Data System (ADS)

    SenGupta, Sumana; Upadhyaya, Hari P.; Kumar, Awadhesh; Naik, Prakash D.; Bajaj, Paramanand

    2005-03-01

    On excitation at 193nm, tetrahydrofuran (THF) generates OH as one of the photodissociation products. The nascent energy state distribution of the OH radical was measured employing laser induced fluorescence technique. It is observed that the OH radical is formed mostly in the ground vibrational level, with low rotational excitation (˜3%). The rotational distribution of OH (v″=0,J) is characterized by rotational temperature of 1250±140K. Two spin-orbit states, Π3/22 and Π1/22 of OH are populated statistically. But, there is a preferential population in Λ doublet levels. For all rotational numbers, the Π+2(A') levels are preferred to the Π-2(A″) levels. The relative translational energy associated with the photoproducts in the OH channel is calculated to be 17.4±2.2kcalmol-1, giving an fT value of ˜36%, and the remaining 61% of the available energy is distributed in the internal modes of the other photofragment, i.e., C4H7. The observed distribution of the available energy agrees well with a hybrid model of energy partitioning, predicting an exit barrier of ≈16kcalmol-1. Based on both ab initio molecular orbital calculations and experimental results, a plausible mechanism for OH formation is proposed. The mechanism involves three steps, the C-O bond cleavage of the ring, H atom migration to the O atom, and the C-OH bond scission, in sequence, to generate OH from the ground electronic state of THF. Besides this high energy reaction channel, other photodissociation channels of THF have been identified by detecting the stable products, using Fourier transform infrared and gas chromatography.

  9. Photoinitiated decomposition of substituted ethylenes: The photodissociation of vinyl chloride and acrylonitrile at 193 nm

    SciTech Connect

    Blank, D.A.; Suits, A.G.; Lee, Y.T.

    1997-04-01

    Ethylene and its substituted analogues (H{sub 2}CCHX) are important molecules in hydrogen combustion. As the simplest {pi}-bonded hydrocarbons these molecules serve as prototypical systems for understanding the decomposition of this important class of compounds. The authors have used the technique of photofragment translational spectroscopy at beamline 9.0.2.1 to investigate the dissociation of vinyl chloride (X=Cl) and acrylonitrile (X=CN) following absorption at 193 nm. The technique uses a molecular beam of the reactant seeded in helium which is crossed at 90 degrees with the output of an excimer laser operating on the ArF transition, 193.3 nm. The neutral photoproducts which recoil out of the molecular beam travel 15.1 cm where they are photoionized by the VUV undulator radiation, mass selected, and counted as a function of time. The molecular beam source is rotatable about the axis of the dissociation laser. The authors have directly observed all four of the following dissociation channels for both systems: (1) H{sub 2}CCHX {r_arrow} H + C{sub 2}H{sub 2}X; (2) H{sub 2}CCHX {r_arrow} X + C{sub 2}H{sub 3}; (3) H{sub 2}CCHX {r_arrow} H{sub 2} + C{sub 2}HX; and (4) H{sub 2}CCHX {r_arrow} HX + C{sub 2}H{sub 2}. They measured translational energy distributions for all of the observed channels and measured the photoionization onset for many of the photoproducts which provided information about their chemical identity and internal energy content. In the case of acrylonitrile, selective product photoionization provided the ability to discriminate between channels 2 and 4 which result in the same product mass combination.

  10. Photolysis of Pure Solid O3 and O2 Films at 193nm

    NASA Technical Reports Server (NTRS)

    Raut, U.; Loeffler, M. J.; Fama, M.; Baragiola, R. A.

    2011-01-01

    We studied quantitatively the photochemistry of solid O3 and O2 films at 193 nm and 22 K with infrared spectroscopy and microgravimetry. Photolysis of pure ozone destroyed O3, but a small amount of ozone remained in the film at high fluence. Photolysis of pure O2 produced O3 in an amount that increased with photon fluence to a stationary level. For both O2 and O3 films, the O3:O2 ratio at large fluences is ?0.07, about two orders of magnitude larger than those obtained in gas phase photolysis. This enhancement is attributed to the increased photodissociation of O2 due to photoabsorption by O2 dimers, a process significant at solid-state densities. We obtain initial quantum yield for ozone synthesis from solid oxygen, phi (O3) = 0.24 0.06, and quantum yields for destruction of O3 and O2 in their parent solids, phi(-O3) = 1.0 0.2 and phi(-O2) = 0.36 0.1. Combined with known photoabsorption cross sections, we estimate probabilities for geminate recombination of 0.5 0.1 for O3 fragments and 0.88 0.03 for oxygen atoms from O2 dissociation. Using a single parameter kinetic model, we deduce the ratio of reaction cross sections for an O atom with O2 vs. O3 to be 0.1 0.2. The general good agreement of the model with the data suggests the validity of the central assumption of efficient energy and spin relaxation of photofragments in the solid prior to their reactions with other species.

  11. Photodissociation of vinyl cyanide at 193 nm: Nascent product distributions of the molecular elimination channels

    SciTech Connect

    Wilhelm, Michael J.; Nikow, Matthew; Letendre, Laura; Dai Hailung

    2009-01-28

    The photodissociation dynamics of vinyl cyanide (H{sub 2}CCHCN, acrylonitrile) and deuterated vinyl cyanide (D{sub 2}CCDCN) at 193 nm are examined using time-resolved Fourier transform infrared emission spectroscopy. Prior photofragment translational spectroscopy studies [D. A. Blank et al., J. Chem. Phys. 108, 5784 (1998)] of the dissociation have observed the presence of four main dissociation channels; two molecular and two radical in nature. However, with the exception of a<0.01 quantum yield determined for the CN radical loss channel, the branching ratios of the remaining three elimination channels were not measured. The time-resolved emission spectra, including those from the deuterated samples, revealed the presence of acetylene, hydrogen cyanide (HCN), as well as the energetically less stable isomer hydrogen isocyanide (HNC). Acetylene is found in two distinct energetic distributions, suggesting that both three- and four-centered elimination reactions are occurring significantly in the dissociation. In contrast to prior ab initio studies that have suggested the dominant nature of the three-center elimination of molecular hydrogen (H{sub 2}) and cyanovinylidene (:C=CHCN), we find this reaction channel to be of little importance as there is no evidence to support any significant presence of rovibrationally excited cyanoacetylene. Spectral modeling of the product distributions allows for the first experimental determination of the relative occurrence of the three-centered (resulting in HCN+vinylidene) versus four-centered (HNC+acetylene) elimination channels as 3.34 to 1.00, in contrast to the previously calculated value of 126:1. Rice-Ramsperger-Kassel-Marcus analysis depicts that the transition state energy of the four-centered reaction should be about 10 kcal mole{sup -1} lower than the three-centered reaction.

  12. Block-based mask optimization for optical lithography.

    PubMed

    Ma, Xu; Song, Zhiyang; Li, Yanqiu; Arce, Gonzalo R

    2013-05-10

    Pixel-based optical proximity correction (PBOPC) methods have been developed as a leading-edge resolution enhancement technique (RET) for integrated circuit fabrication. PBOPC independently modulates each pixel on the reticle, which tremendously increases the mask's complexity and, at the same time, deteriorates its manufacturability. Most current PBOPC algorithms recur to regularization methods or a mask manufacturing rule check (MRC) to improve the mask manufacturability. Typically, these approaches either fail to satisfy manufacturing constraints on the practical product line, or lead to suboptimal mask patterns that may degrade the lithographic performance. This paper develops a block-based optical proximity correction (BBOPC) algorithm to pursue the optimal masks with manufacturability compliance, where the mask is shaped by a set of overlapped basis blocks rather than pixels. BBOPC optimization is formulated based on a vector imaging model, which is adequate for both dry lithography with lower numerical aperture (NA), and immersion lithography with hyper-NA. The BBOPC algorithm successively optimizes the main features (MF) and subresolution assist features (SRAF) based on a modified conjugate gradient method. It is effective at smoothing any unmanufacturable jogs along edges. A weight matrix is introduced in the cost function to preserve the edge fidelity of the printed images. Simulations show that the BBOPC algorithm can improve lithographic imaging performance while maintaining mask manufacturing constraints.

  13. Method for the protection of extreme ultraviolet lithography optics

    DOEpatents

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  14. Nanopatterning by laser interference lithography: applications to optical devices.

    PubMed

    Seo, Jung-Hun; Park, Jung Ho; Kim, Seong-Il; Park, Bang Ju; Ma, Zhenqiang; Choi, Jinnil; Ju, Byeong-Kwon

    2014-02-01

    A systematic review, covering fabrication of nanoscale patterns by laser interference lithography (LIL) and their applications for optical devices is provided. LIL is a patterning method. It is a simple, quick process over a large area without using a mask. LIL is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with LIL are the platform for further fabrication of nanostructures and growth of functional materials used as the building blocks for devices. Demonstration of optical and photonic devices by LIL is reviewed such as directed nanophotonics and surface plasmon resonance (SPR) or large area membrane reflectors and anti-reflectors. Perspective on future directions for LIL and emerging applications in other fields are presented.

  15. Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithography

    NASA Astrophysics Data System (ADS)

    Li, S. P.; Lebib, A.; Peyrade, D.; Natali, M.; Chen, Y.; Lew, W. S.; Bland, J. A. C.

    2001-07-01

    We report the fabrication and magnetic properties of permalloy microgrids prepared by near-field optical lithography and characterized using high-sensitivity magneto-optical Kerr effect techniques. A fourfold magnetic anisotropy induced by the grid architecture is identified.

  16. INTERACTION OF LASER RADIATION WITH MATTER: Rearrangement of a phosphosilicate glass network induced by the 193-nm radiation

    NASA Astrophysics Data System (ADS)

    Larionov, Yu V.; Sokolov, V. O.; Plotnichenko, V. G.

    2008-10-01

    The IR absorption and Raman spectra of phosphosilicate glass (PSG) are measured during its exposure to radiation at a wavelength of 193 nm. The obtained data demonstrate the complicated rearrangement dynamics of the glass network around phosphor atoms and of the glass network as a whole. The experimental dependences are explained by the model of the PSG network based on the concepts of the theory of rigidity percolation.

  17. Fluoride antireflection coatings for deep ultraviolet optics deposited by ion-beam sputtering.

    PubMed

    Yoshida, Toshiya; Nishimoto, Keiji; Sekine, Keiichi; Etoh, Kazuyuki

    2006-03-01

    Optically high quality coatings of fluoride materials are required in deep ultraviolet (DUV) lithography. We have applied ion-beam sputtering (IBS) to obtain fluoride films with smooth surfaces. The extinction coefficients were of the order of 10(-4) at the wavelength of 193 nm due to the reduction of their absorption loss. The transmittance of the MgF2/GdF3 antireflection coating was as high as 99.7% at the wavelength of 193 nm. The surfaces of the IBS deposited films were so smooth that the surface roughness of the A1F3/GdF3 film was comparable with that of the CaF2 substrate. The MgF2/GdF3 coating fulfilled the temperature and humidity requirements of military specification. Thus, the IBS deposited fluoride films are promising candidate for use in the DUV lithography optics.

  18. 32nm node technology development using interference immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; McCafferty, Diane; Markoya, Louis; Hendrickx, Eric; Hermans, Jan; Ronse, Kurt

    2005-05-01

    The 38nm and 32nm lithography nodes are the next major targets for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it will not be able to achieve the 38nm or the 32nm nodes as currently defined. To achieve these next lithographic nodes will require new, very high refractive index fluids to replace the water used in current immersion systems. This paper describes tests and experiments using an interference immersion lithography test jig to develop key technology for the 32nm node. Interference imaging printers have been available for years, and with the advent of Immersion Lithography, they have a new use. Interference immersion image printing offers users a rapid, cost-effective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: Polarization of the image forming light rays; Fluid/resist interaction during exposure; Topcoat film performance; and the Line Edge Roughness (LER) of resists at extremely high resolutions can all be readily studied. Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using 193nm wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on 45nm, 38nm, and 32nm L/S features. Results on the performance of resists and topcoats are reported for 32nm L/S features.

  19. Fast character projection electron beam lithography for diffractive optical elements

    NASA Astrophysics Data System (ADS)

    Harzendorf, Torsten; Fuchs, Frank; Banasch, Michael; Zeitner, Uwe D.

    2014-05-01

    Electron beam lithography becomes attractive also for the fabrication of large scale diffractive optical elements by the use of the character projection (CP) technique. Even in the comparable fast variable shaped beam (VSB) exposure approach for conventional electron beam writers optical nanostructures may require very long writing times exceeding 24 hours per wafer because of the high density of features, as required by e.g. sub-wavelength nanostructures. Using character projection, the writing time can be reduced by more than one order of magnitude, due to the simultaneous exposure of multiple features. The benefit of character projection increases with increasing complexity of the features and decreasing period. In this contribution we demonstrate the CP technique for a grating of hexagonal symmetry at 350nm period. The pattern is designed to provide antireflective (AR) properties, which can be adapted in their spectral and angular domain for applications from VIS to NIR by changing the feature size and the etching depth of the nanostructure. This AR nanostructure can be used on the backside of optical elements e.g. gratings, when an AR coating stack could not be applied for the reason of climatic conditions or wave front accuracy.

  20. Nanofabrication at 1nm resolution by quantum optical lithography (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Pavel, Eugen

    2015-08-01

    A major problem in the optical lithography was the diffraction limit. Here, we report and demonstrate a lithography method, Quantum Optical Lithography [1,2], able to attain 1 nm resolution by optical means using new materials (fluorescent photosensitive glass-ceramics and QMC-5 resist). The performance is several times better than that described for any optical or Electron Beam Lithography (EBL) methods. In Fig. 1 we present TEM images of 1 nm lines recorded at 9.6 m/s. a) b) Fig. 1 TEM images of: a) multiple 1 nm lines written in a fluorescent photosensitive glass-ceramics sample; b) single 1 nm line written in QMC-5 resist. References [1] E. Pavel, S. Jinga, B.S. Vasile, A. Dinescu, V. Marinescu, R. Trusca and N. Tosa, "Quantum Optical Lithography from 1 nm resolution to pattern transfer on silicon wafer", Optics and Laser Technology, 60 (2014) 80-84. [2] E. Pavel, S. Jinga, E. Andronescu, B.S. Vasile, G. Kada, A. Sasahara, N. Tosa, A. Matei, M. Dinescu, A. Dinescu and O.R. Vasile, "2 nm Quantum Optical Lithography", Optics Communications,291 (2013) 259-263

  1. Ion Implant Enabled 2x Lithography

    NASA Astrophysics Data System (ADS)

    Martin, Patrick M.; Godet, Ludovic; Cheung, Andrew; de Cock, Gael; Hatem, Chris

    2011-01-01

    Ion implantation has many applications in microelectronics beyond doping. The broad range of species available combined with the ability to precisely control dose, angle, and energy offers compelling advantages for use in precision material modification. The application to lithography has been reported elsewhere. Integrating ion implantation into the lithography process enables scaling the feature size requirements beyond the 15 nm node with a simplified double patterning sequence. In addition, ion implant may be used to remove line edge roughness, providing tremendous advantages to meet extreme lithography imaging requirements and provide additional device stability. We examine several species (e.g. Si, Ar, etc.) and the effect of energy and impact angle on several commercially available 193 nm immersion photoresists using a Varian VIISta® single wafer high current ion implanter. The treated photoresist will be evaluated for stability in an integrated double patterning application with ion implant used to freeze the primary image. We report on critical dimension impact, pattern integrity, optical property modification, and adhesion. We analyze the impact of line edge roughness improvement beyond the work of C. Struck including the power spectral distribution. TGA and FTIR Spectroscopy results for the implanted photoresist materials will also be included.

  2. The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Neutral atomic zinc and oxygen emission

    SciTech Connect

    Kahn, E. H.; Langford, S. C.; Dickinson, J. T.; Boatner, Lynn A

    2013-01-01

    We report mass-resolved time-of-flight measurements of neutral particles from the surface of single-crystal ZnO during pulsed 193-nm irradiation at laser fluences below the threshold for avalanche breakdown. The major species emitted are atomic Zn and O. We examine the emissions of atomic Zn as a function of laser fluence and laser exposure. Defects at the ZnO surface appear necessary for the detection of these emissions. Our results suggest that the production of defects is necessary to explain intense sustained emissions at higher fluence. Rapid, clean surface etching and high atomic zinc kinetic energies seen at higher laser fluences are also discussed.

  3. Detection of sodium and potassium in single human red blood cells by 193-nm laser ablative sampling: a feasibility demonstration.

    PubMed

    Ng, C W; Cheung, N H

    2000-01-01

    The feasibility of quantifying sodium and potassium in single human erythrocytes was demonstrated by spectrochemical analysis of emissions from plasmas produced by 193-nm laser ablation of blood cells confined in a sheath flow. In one scheme, single blood cells that happened to be in the ablation volume were sampled. In another scheme, individual blood cells were first sighted and then synchronously ablated downstream. Plasma emission spectra of single ablated cells were captured, and the ratios of the analyte line intensity to the root-mean-square fluctuation of the continuum background were measured to be about 18 for sodium and 30 for potassium.

  4. Statistical Examination of the a and a + 1 Fragment Ions from 193 nm Ultraviolet Photodissociation Reveals Local Hydrogen Bonding Interactions

    NASA Astrophysics Data System (ADS)

    Morrison, Lindsay J.; Rosenberg, Jake A.; Singleton, Jonathan P.; Brodbelt, Jennifer S.

    2016-09-01

    Dissociation of proteins and peptides by 193 nm ultraviolet photodissociation (UVPD) has gained momentum in proteomic studies because of the diversity of backbone fragments that are produced and subsequent unrivaled sequence coverage obtained by the approach. The pathways that form the basis for the production of particular ion types are not completely understood. In this study, a statistical approach is used to probe hydrogen atom elimination from a + 1 radical ions, and different extents of elimination are found to vary as a function of the identity of the C-terminal residue of the a product ions and the presence or absence of hydrogen bonds to the cleaved residue.

  5. A novel optical lithography implement utilizing third harmonic generation via metallic tip enhanced near field

    NASA Astrophysics Data System (ADS)

    Zhang, Hui; Zhu, Ning; Mei, Ting; He, Miao; Li, Hao; Chen, Zhenshi

    2017-01-01

    A novel scheme for near-field optical lithography utilizing a metallic tip illuminated by femtosecond laser pulses with proper polarization has been presented. The strongly enhanced near field at the metallic tip offers a localized excitation source for the third harmonic generation in the nonlinear material. The generated third harmonic via excitation of nonlinear photoresist provides good exposure contrast due to the cubic intensity dependence. The spatial resolution of this novel lithography scheme is shown to be better than that of the conventional lithography technique.

  6. Fundamental study of optical threshold layer approach towards double exposure lithography

    NASA Astrophysics Data System (ADS)

    Gu, Xinyu; Berro, Adam J.; Cho, Younjin; Jen, Kane; Lee, Saul; Ngai, Tomoki; Ogata, Toshiyuki; Durand, William J.; Sundaresan, Arunkumar; Lancaster, Jeffrey R.; Jockusch, Steffen; Zimmerman, Paul; Turro, Nicholas J.; Willson, C. G.

    2009-03-01

    193 immersion lithography has reached its maximal achievable resolution. There are mainly two lithographic strategies that will enable continued increase in resolution. Those are being pursued in parallel. The first is extreme ultraviolet (EUV) lithography and the second is double patterning (exposure) lithography. EUV lithography is counted on to be available in 2013 time frame for 22 nm node. Unfortunately, this technology has suffered several delays due to fundamental problems with source power, mask infrastructure, metrology and overall reliability. The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node. This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography. Compared to DPL, DEL offers advantages in overlay and process time, thus reducing the cost-of-ownership (CoO). However, DEL requires new materials that have a non-linear photoresponse. So far, several approaches were proposed for double exposure lithography, from which Optical Threshold Layer (OTL) was found to give the best lithography performance according to the results of the simulation. This paper details the principle of the OTL approach. A photochromic polymer was designed and synthesized. The feasibility of the material for application of DEL was explored by a series of evaluations.

  7. New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins

    NASA Astrophysics Data System (ADS)

    Rushkin, Ilya L.; Houlihan, Francis M.; Kometani, Janet M.; Hutton, Richard S.; Timko, Allen G.; Reichmanis, Elsa; Nalamasu, Omkaram; Gabor, Allen H.; Medina, Arturo N.; Slater, Sydney G.; Neisser, Mark O.

    1999-06-01

    A series of new polymers for 193 nm single layer resist based on maleic anhydride/cycloolefin systems with minimum amount of acrylate units were synthesized. In order to minimize the acrylate content, the cycloolefin moiety of the polymers was functionalized with side groups designed to either promotes adhesion to silicon substrate and/or impart the imaging functionality. All polymers were prepared by free-radical polymerization in moderate to high yields and were characterized by variety of techniques. The initial lithographic evaluation of the new resists was carried out. It was found that acrylates can be successfully replaced with appropriately substituted cycloolefins to provide good resolution. The etch resistance of the new materials generally improves with increase in cycloolefin content. The Onishi and Kunz type plots will be discussed.

  8. Collision-induced desorption in 193-nm photoinduced reactions in (O{sub 2}+CO) adlayers on Pt(112)

    SciTech Connect

    Han Song; Ma Yunsheng; Matsushima, Tatsuo

    2005-09-01

    The spatial distribution of desorbing O{sub 2} and CO{sub 2} was examined in 193-nm photoinduced reactions in O{sub 2}+CO adlayers on stepped Pt (112)=[(s)3(111)x(001)]. The O{sub 2} desorption collimated in inclined ways in the plane along the surface trough, confirming the hot-atom collision mechanism. In the presence of CO(a), the product CO{sub 2} desorption also collimated in an inclined way, whereas the inclined O{sub 2} desorption was suppressed. The inclined O{sub 2} and CO{sub 2} desorption is explained by a common collision-induced desorption model. At high O{sub 2} coverage, the CO{sub 2} desorption collimated closely along the (111) terrace normal.

  9. Prevention of optics and resist contamination in 300-mm lithography: improvements in chemical air filtration

    NASA Astrophysics Data System (ADS)

    Kinkead, Devon A.; Grayfer, Anatoly; Kishkovich, Oleg P.

    2001-08-01

    Atmospheric pressure deep UV lithography using fast chemically amplified photoresists will be the mainstay of semiconductor production into the foreseeable future. Airborne molecular contamination (AMC) in the form of bases and condensable organic and inorganic materials however, threaten both sensitive optics and modern resists thereby creating a host of yield limiting contamination issues. Past work by Kunz at MIT has described photo-induced organic contamination of lithographic optics as a significant concern in leading-edge lithography. Moreover, Kinkead and Ercken, and Kishkovich and Dean have published work on the impact of base contamination on CD uniformity in modern photoresists. Herein, the authors discuss solutions to control both optics and resist contamination in a single compact filter system for advanced lithography. The results of this work suggest that resist and optics contamination can be controlled as we enter the era of low K1 factor <150nm/300mm-device production.

  10. Micro-optics: enabling technology for illumination shaping in optical lithography

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard

    2014-03-01

    Optical lithography has been the engine that has empowered semiconductor industry to continually reduce the half-pitch for over 50 years. In early mask aligners a simple movie lamp was enough to illuminate the photomask. Illumination started to play a more decisive role when proximity mask aligners appeared in the mid-1970s. Off-axis illumination was introduced to reduce diffraction effects. For early projection lithography systems (wafer steppers), the only challenge was to collect the light efficiently to ensure short exposure time. When projection optics reached highest level of perfection, further improvement was achieved by optimizing illumination. Shaping the illumination light, also referred as pupil shaping, allows the optical path from reticle to wafer to be optimized and thus has a major impact on aberrations and diffraction effects. Highly-efficient micro-optical components are perfectly suited for this task. Micro-optics for illumination evolved from simple flat-top (fly's-eye) to annular, dipole, quadrupole, multipole and freeform illumination. Today, programmable micro-mirror arrays allow illumination to be changed on the fly. The impact of refractive, diffractive and reflective microoptics for photolithography will be discussed.

  11. Numerical and experimental study of near-field scanning optical lithography using nanoscale bowtie apertures with ultrasmall gap size

    NASA Astrophysics Data System (ADS)

    Ding, Li; Qin, Jin; Chen, Yang; Wang, Liang

    2016-07-01

    Nanoscale ridge apertures have been demonstrated to be applied for high-resolution lithography. We performed a numerical study of nanoscale bowtie apertures with different outline dimensions and gap sizes to analyze their detailed field distribution for near-field scanning optical lithography (NSOL). It is found that the high image contrast, which is necessary for good quality lithography, is obtained in the near-field region and decays quickly with increasing distance. Furthermore, a smaller gap size achieves higher image contrast and deeper depth of focus. With the NSOL system, static and scanning lithography experiments are conducted. Combined with the passive flexure stage for contact control, we achieved 18-nm lithography resolution.

  12. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    SciTech Connect

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters {beta}(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their {beta}(t) distributions are insensitive to the photon energy. Dissociation to H{sub 2}CO+C{sub 2}H{sub 4} is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H{sub 2}CO+C{sub 2}H{sub 4}. The observation of H{sub 2} and H atoms, {approx}1% in branching, indicates that products H{sub 2}CO and C{sub 2}H{sub 4} spontaneously decompose to only a small extent. Most HCO, C{sub 2}H{sub 3}, and C{sub 2}H{sub 2} ions originate from dissociative photoionization of products H{sub 2}CO and C{sub 2}H{sub 4}. Except atomic H and H{sub 2}, the photoproducts have large angular anisotropies, {beta}{>=}-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  13. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction.

    PubMed

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters beta(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their beta(t) distributions are insensitive to the photon energy. Dissociation to H(2)CO+C(2)H(4) is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H(2)CO+C(2)H(4). The observation of H(2) and H atoms, approximately 1% in branching, indicates that products H(2)CO and C(2)H(4) spontaneously decompose to only a small extent. Most HCO, C(2)H(3), and C(2)H(2) ions originate from dissociative photoionization of products H(2)CO and C(2)H(4). Except atomic H and H(2), the photoproducts have large angular anisotropies, beta>or=-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  14. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    NASA Astrophysics Data System (ADS)

    Lee, Shih-Huang

    2009-12-01

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters β(t) as a function of flight time of products at m /z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their β(t) distributions are insensitive to the photon energy. Dissociation to H2CO+C2H4 is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H2CO+C2H4. The observation of H2 and H atoms, ˜1% in branching, indicates that products H2CO and C2H4 spontaneously decompose to only a small extent. Most HCO, C2H3, and C2H2 ions originate from dissociative photoionization of products H2CO and C2H4. Except atomic H and H2, the photoproducts have large angular anisotropies, β ≥-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  15. Photoresist surface roughness characterization in additive lithography processes for fabrication of phase-only optical vortices

    NASA Astrophysics Data System (ADS)

    Poutous, Menelaos K.; Hosseinimakarem, Zahra; Johnson, Eric G.

    2012-10-01

    Roughness on the surface of phase-only micro-optical elements limits their performance. An optical vortex phase element was fabricated, using additive lithography, with an optimized process to achieve minimal surface roughness. Shipley S1827 photoresist was used in order to obtain the appropriate additive lithography dynamic range for the desired phase profile. We investigated the effects of both postapplied and postexposure baking processes, bias exposure dose, as well as the effects of surfactant in the developer. We found the resist surface roughness to be a function of both the temperature and the time of the postapplication baking cycles, as well as the developer surfactant content. Based on our findings, an empirical correlation model was constructed to relate the process parameters with surface roughness measured quantities. The maximum roughness of the optical surface, for the optimized process, was reduced to 40 percent of the value for the unoptimized process and the additive lithography useful exposure range was increased by 10 percent.

  16. Electron-beam lithography for micro and nano-optical applications

    NASA Technical Reports Server (NTRS)

    Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.

    2005-01-01

    Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

  17. Three-dimensional deep sub-diffraction optical beam lithography with 9 nm feature size.

    PubMed

    Gan, Zongsong; Cao, Yaoyu; Evans, Richard A; Gu, Min

    2013-01-01

    The current nanofabrication techniques including electron beam lithography provide fabrication resolution in the nanometre range. The major limitation of these techniques is their incapability of arbitrary three-dimensional nanofabrication. This has stimulated the rapid development of far-field three-dimensional optical beam lithography where a laser beam is focused for maskless direct writing. However, the diffraction nature of light is a barrier for achieving nanometre feature and resolution in optical beam lithography. Here we report on three-dimensional optical beam lithography with 9 nm feature size and 52 nm two-line resolution in a newly developed two-photon absorption resin with high mechanical strength. The revealed dependence of the feature size and the two-line resolution confirms that they can reach deep sub-diffraction scale but are limited by the mechanical strength of the new resin. Our result has paved the way towards portable three-dimensional maskless laser direct writing with resolution fully comparable to electron beam lithography.

  18. Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

    SciTech Connect

    Brihoum, M.; Ramos, R.; Menguelti, K.; Cunge, G.; Pargon, E.; Joubert, O.

    2013-01-07

    HBr plasma treatments are widely used in nanoscale lithographic technologies to increase the plasma etch resistance of 193 nm photoresist masks as well as to decrease their Line Width Roughness (LWR). VUV irradiation of the photoresist is known to play a major role in this process by inducing polymer chains rearrangement and finally LWR reduction. However, in the plasma environment (i.e., with radical and ion bombardment), the interaction layer formed at the resist surface perturbs this mechanism and a lower LWR reduction is achieved compared to VUV only treatment. So far the nature of the interaction layer, its formation mechanism and its relation with the resist pattern LWR were all unclear. In this paper, we show that a graphite-like layer is formed on the resist patterns by the redeposition of carbon-based species originating from the plasma dissociation of outgassed photo-etched resist moieties. We show that the presence of this layer inhibits the LWR minimization and causes an increase in the LWR when it becomes thick enough (i.e., a few nanometers). We present evidences that the difference in the mechanical properties of the graphite-like top layer which coats the resist patterns and the bulk of the resist patterns is correlated to the LWR after plasma treatment. We can conclude that the optimization of an HBr cure process relies on the minimization of the carbon redeposition while keeping a significant VUV light flux and we show that this can be achieved by using pulsed plasma processes.

  19. In situ, real-time detection of soot particles coated with NaCl using 193 nm light

    NASA Astrophysics Data System (ADS)

    Choi, J. H.; Stipe, C. B.; Koshland, C. P.; Lucas, D.

    2006-09-01

    We report in situ, real-time detection of soot particles coated with NaCl using excimer laser fragmentation fluorescence spectroscopy (ELFFS). Carbon atom fluorescence at 248 nm and the Na D-line at 589 nm are used as signatures of soot and NaCl, respectively. Soot particles are encapsulated with a NaCl layer in a well-controlled inverted flame burner. NaCl particles are injected into the methane-air co-flow flame to coat the soot particles. ArF laser irradiation of the coated particles in an air stream at 1.14 J/cm2 produces fluorescence from Na, C, and CH. At 0.69 J/cm2, which is slightly above the fluorescence threshold, but not enough for considerable fragmentation of the particles, Na D-line persists with little carbon and no CH observed. These results suggest that the photolytic fragmentation-fluorescence using 193 nm excitation can be effectively used for in situ, real-time chemical analysis of core-shell nanoparticles.

  20. The photodissociation dynamics of O2 at 193 nm: an O3PJ angular momentum polarization study.

    PubMed

    Brouard, M; Cireasa, R; Clark, A P; Quadrini, F; Vallance, C

    2006-12-21

    In the following paper we present translational anisotropy and angular momentum polarization data for O((3)P(1)) and O((3)P(2)) products of the photodissociation of molecular oxygen at 193 nm. The data were obtained using polarized laser photodissociation coupled with resonantly enhanced multiphoton ionization and velocity-map ion imaging. Under the jet-cooled conditions employed, absorption is believed to be dominated by excitation into the Herzberg continuum. The experimental data are compared with previous experiments and theoretical calculations at this and other wavelengths. Semi-classical calculations performed by Groenenboom and van Vroonhoven [J. Chem. Phys, 2002, 116, 1965] are used to estimate the alignment parameters arising from incoherent excitation and dissociation and these are shown to agree qualitatively well with the available experimental data. Following the work of Alexander et al. [J. Chem. Phys, 2003, 118, 10566], orientation and alignment parameters arising from coherent excitation and dissociation are modelled more approximately by estimating phase differences generated subsequent to dissociation via competing adiabatic pathways leading to the same asymptotic products. These calculations lend support to the view that large values of the coherent alignment moments, but small values of the corresponding orientation moments, could arise from coherent excitation of (and subsequent dissociation via) parallel and perpendicular components of the Herzberg I, II and III transitions.

  1. Diffractive optical elements on non-flat substrates using electron beam lithography

    NASA Technical Reports Server (NTRS)

    Maker, Paul D. (Inventor); Muller, Richard E. (Inventor); Wilson, Daniel W. (Inventor)

    2002-01-01

    The present disclosure describes a technique for creating diffraction gratings on curved surfaces with electron beam lithography. The curved surface can act as an optical element to produce flat and aberration-free images in imaging spectrometers. In addition, the fabrication technique can modify the power structure of the grating orders so that there is more energy in the first order than for a typical grating. The inventors noticed that by using electron-beam lithography techniques, a variety of convex gratings that are well-suited to the requirements of imaging spectrometers can be manufactured.

  2. Indus-2 X-ray lithography beamline for X-ray optics and material science applications

    SciTech Connect

    Dhamgaye, V. P. Lodha, G. S.

    2014-04-24

    X-ray lithography is an ideal technique by which high aspect ratio and high spatial resolution micro/nano structures are fabricated using X-rays from synchrotron radiation source. The technique has been used for fabricating optics (X-ray, visible and infrared), sensors and actuators, fluidics and photonics. A beamline for X-ray lithography is operational on Indus-2. The beamline offers wide lithographic window from 1-40keV photon energy and wide beam for producing microstructures in polymers upto size ∼100mm × 100mm. X-ray exposures are possible in air, vacuum and He gas environment. The air based exposures enables the X-ray irradiation of resist for lithography and also irradiation of biological and liquid samples.

  3. Diffractive optical variable image devices generated by maskless interferometric lithography for optical security

    NASA Astrophysics Data System (ADS)

    Cabral, Alexandre; Rebordão, José M.

    2011-05-01

    In optical security (protection against forgery and counterfeit of products and documents) the problem is not exact reproduction but the production of something sufficiently similar to the original. Currently, Diffractive Optically Variable Image Devices (DOVID), that create dynamic chromatic effects which may be easily recognized but are difficult to reproduce, are often used to protect important products and documents. Well known examples of DOVID for security are 3D or 2D/3D holograms in identity documents and credit cards. Others are composed of shapes with different types of microstructures yielding by diffraction to chromatic dynamic effects. A maskless interferometric lithography technique to generate DOVIDs for optical security is presented and compared to traditional techniques. The approach can be considered as a self-masking focused holography on planes tilted with respect to the reference optical axes of the system, and is based on the Scheimpflug and Hinge rules. No physical masks are needed to ensure optimum exposure of the photosensitive film. The system built to demonstrate the technique relies on the digital mirrors device MOEMS technology from Texas Instruments' Digital Light Processing. The technique is linear on the number of specified colors and does not depend either on the area of the device or the number of pixels, factors that drive the complexity of dot-matrix based systems. The results confirmed the technique innovation and capabilities in the creation of diffractive optical elements for security against counterfeiting and forgery.

  4. Modeling of multiple-optical-axis pattern-integrated interference lithography systems.

    PubMed

    Sedivy, Donald E; Gaylord, Thomas K

    2014-06-01

    The image quality and collimation in a multiple-optical-axis pattern-integrated interference lithography system are evaluated for an elementary optical system composed of single-element lenses. Image quality and collimation are individually and jointly optimized for these lenses. Example images for a jointly optimized system are simulated using a combination of ray tracing and Fourier analysis. Even with these nonoptimized components, reasonable fidelity is shown to be possible.

  5. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    SciTech Connect

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  6. Process window simulation study with immersion lithography for 45-nm technology node

    NASA Astrophysics Data System (ADS)

    Park, Oseo; Gutmann, Alois; Neumueller, Walter; Back, David

    2004-05-01

    As the potentials of experimental studies are still limited, a predictive resist image simulation of Immersion lithography is very important for a better understanding of the technology. One of the most critical issues in Immersion lithography is the description of the influence of immersion which is the presence of a uniform liquid layer between the last objective lens and the photo resist, on optical lithography. It enables the real part of the index of refraction in the image space, and the numerical aperture of the projection lens, to be greater than unity. Therefore, it is virtually involves Maxwell vector solution approach, including polarization effects and arbitrary thin film multi-layers. This paper discusses the improvement in process window afforded by immersion under a variety of conditions, including 193nm and 157nm, Off-axis illumination, Attenuated Phase Shift Mask for 65nm and 45nm technology node. Comparisons with dry and liquid lithography simulations are used to evaluate the availability and the performance of the proposed approach. The implemented resist simulation approach is examined the impact to the process window of variations in liquid refractive index as well.

  7. Photonic band-gap formation by optical-phase-mask lithography.

    PubMed

    Chan, Timothy Y M; Toader, Ovidiu; John, Sajeev

    2006-04-01

    We demonstrate an approach for fabricating photonic crystals with large three-dimensional photonic band gaps (PBG's) using single-exposure, single-beam, optical interference lithography based on diffraction of light through an optical phase mask. The optical phase mask (OPM) consists of two orthogonally oriented binary gratings joined by a thin, solid layer of homogeneous material. Illuminating the phase mask with a normally incident beam produces a five-beam diffraction pattern which can be used to expose a suitable photoresist and produce a photonic crystal template. Optical-phase-mask Lithography (OPML) is a major simplification from the previously considered multibeam holographic lithography of photonic crystals. The diffracted five-beam intensity pattern exhibits isointensity surfaces corresponding to a diamondlike (face-centered-cubic) structure, with high intensity contrast. When the isointensity surfaces in the interference patterns define a silicon-air boundary in the resulting photonic crystal, with dielectric contrast 11.9 to 1, the optimized PBG is approximately 24% of the gap center frequency. The ideal index contrast for the OPM is in the range of 1.7-2.3. Below this range, the intensity contrast of the diffraction pattern becomes too weak. Above this range, the diffraction pattern may become too sensitive to structural imperfections of the OPM. When combined with recently demonstrated polymer-to-silicon replication methods, OPML provides a highly efficient approach, of unprecedented simplicity, for the mass production of large-scale three-dimensional photonic band-gap materials.

  8. High-n immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Cortie, Rogier; Meijers, Ralph; Evangelista, Fabrizio; Samarakone, Nandarisi

    2008-03-01

    A two-year study on the feasibility of High-n Immersion Lithography shows very promising results. This paper reports the findings of the study. The evaluation shows the tremendous progress made in the development of second-generation immersion fluid technology. Candidate fluids from several suppliers have been evaluated. All the commercial fluids evaluated are viable, so there are a number of options. Life tests have been conducted on bench top fluid-handling systems and the results referenced to full-scale systems. Parameters such as Dose per Laser Pulse, Pulse Rate, Fluid Flow Rate, and Fluid Absorbency at 193nm, and Oxygen/Air Contamination Levels were explored. A detailed evaluation of phenomena such as Last Lens Element (LLE) contamination has been conducted. Lens cleaning has been evaluated. A comparison of High-n fluid-based technology and water-based immersion technology shows interesting advantages of High-n fluid in the areas of Defect and Resist Interaction. Droplet Drying tests, Resist Staining evaluations, and Resist Contrast impact studies have all been run. Defect-generating mechanisms have been identified and are being eliminated. The lower evaporation rate of the High-n fluids compared with water shows the advantages of High-n Immersion. The core issue for the technology, the availability of High-n optical material for use as the final lens element, is updated. Samples of LuAG material have been received from development partners and have been evaluated. The latest status of optical materials and the technology timelines are reported. The potential impact of the availability of the technology is discussed. Synergy with technologies such as Double Patterning is discussed. The prospects for <22nm (hp) are evaluated.

  9. Nanosecond-time-response temperature measurements using radiation thermometry during 193-nm and 247-nm pulsed light irradiation: comparison of corneal surface temperature histories

    NASA Astrophysics Data System (ADS)

    Ishihara, Miya; Arai, Tsunenori; Sato, Shunichi; Morimoto, Yuji; Obara, Minoru; Kikuchi, Makoto

    2001-07-01

    We have developed the fast time-response measurement of thermal radiation with 15ns rise time to monitor the corneal surface temperature during ArF excimer laser ablation. In this study, e aim to investigate the influence of the relation between the corneal penetration depth and sampling depth of the measurement system on the measured temperature using 193 nm and 247 nm pulsed lights which have different penetration depths of cornea. When the sampling depth was defined as the penetration depth of cornea at the thermal radiation wavelength, we obtained about 3 micrometers of the sampling depth by pulsed photothermal radiometry (PPTR). In the case of the 247 nm light irradiation, where the corneal absorption coefficient at 247 nm was approximately equal to that for the thermal radiation, we found that the measured temperature rises were same as the estimated temperature rises based on the photothermal process. In contrast, in the case of the 193 nm light irradiation, where the absorption coefficient at 193 nm was larger than that for the thermal radiation, we found that the measured temperature rises were lower than the estimated temperature rises.

  10. High throughput optical lithography by scanning a massive array of bowtie aperture antennas at near-field.

    PubMed

    Wen, X; Datta, A; Traverso, L M; Pan, L; Xu, X; Moon, E E

    2015-11-03

    Optical lithography, the enabling process for defining features, has been widely used in semiconductor industry and many other nanotechnology applications. Advances of nanotechnology require developments of high-throughput optical lithography capabilities to overcome the optical diffraction limit and meet the ever-decreasing device dimensions. We report our recent experimental advancements to scale up diffraction unlimited optical lithography in a massive scale using the near field nanolithography capabilities of bowtie apertures. A record number of near-field optical elements, an array of 1,024 bowtie antenna apertures, are simultaneously employed to generate a large number of patterns by carefully controlling their working distances over the entire array using an optical gap metrology system. Our experimental results reiterated the ability of using massively-parallel near-field devices to achieve high-throughput optical nanolithography, which can be promising for many important nanotechnology applications such as computation, data storage, communication, and energy.

  11. A theoretical roadmap for optical lithography of photonic band gap microchips

    NASA Astrophysics Data System (ADS)

    Chan, Timothy Y. M.

    This thesis presents designs and fabrication algorithms for 3D photonic band gap (PBG) material synthesis and embedded optical waveguide networks. These designs are suitable for large scale micro-fabrication using optical lithography methods. The first of these is a criss-crossing pore structure based on fabrication by direct photo-electrochemical etching in single-crystal silicon. We demonstrate that a modulation of the pore radius between pore crossing points leads to a moderately large PBG. We delineate a variety of PBG architectures amenable to fabrication by holographic lithography. In this technique, an optical interference pattern exposes a photo-sensitive material, leading to a template structure in the photoresist whose dielectric-air interface corresponds to an iso-intensity surface in the exposing interference pattern. We demonstrate PBG architectures obtainable from the interference patterns from four independent beams. The PBG materials may be fabricated by replicating the developed photoresist with established silicon replication methods. We identify optical beam configurations that optimize the intensity contrast in the photoresist. We describe the invention of a new approach to holographic lithography of PBG materials using the diffraction of light through a three-layer optical phase mask (OPM). We show how the diffraction-interference pattern resulting from single beam illumination of our OPM closely resembles a diamondlike architecture for suitable designs of the phase mask. It is suggested that OPML may both simplify and supercede all previous optical lithography approaches to PBG material synthesis. Finally, we demonstrate theoretically the creation of three-dimensional optical waveguide networks in holographically defined PBG materials. This requires the combination of direct laser writing (DLW) of lines of defects within the holographically-defined photoresist and the replication of the microchip template with a high refractive index

  12. Photoresist roughness characterization in additive lithography processes for the fabrication of phase-only optical vortices

    NASA Astrophysics Data System (ADS)

    Hosseinimakarem, Zahra; Poutous, Menelaos K.; Johnson, Eric G.

    2012-03-01

    The roughness on the surface of phase-only micro-optical elements can limit their performance. An optical vortex phase element was fabricated by using additive lithography with an optimized process to have minimal surface roughness. Thick photoresist was used in order to obtain the appropriate dynamic range for the desired phase profile. We investigated the effects of both post applied and post exposure baking processes, as well as the effects of surfactant in the developer. We found the resist surface roughness to be a function of both the temperature and the time of the respective bakes, as well as the developer surfactant content.

  13. Elevating optical activity: Efficient on-edge lithography of three-dimensional starfish metamaterial

    SciTech Connect

    Dietrich, K. Menzel, C.; Lehr, D.; Puffky, O.; Pertsch, T.; Tünnermann, A.; Kley, E.-B.; Hübner, U.

    2014-05-12

    We present an approach for extremely fast, wafer-scale fabrication of chiral starfish metamaterials based on electron beam- and on-edge lithography. A millimeter sized array of both the planar chiral and the true 3D chiral starfish is realized, and their chiroptical performances are compared by circular dichroism measurements. We find optical activity in the visible and near-infrared spectral range, where the 3D starfish clearly outperforms the planar design by almost 2 orders of magnitude, though fabrication efforts are only moderately increased. The presented approach is capable of bridging the gap between high performance optical chiral metamaterials and industrial production by nanoimprint technology.

  14. Metrology for Grayscale Lithography

    SciTech Connect

    Murali, Raghunath

    2007-09-26

    Three dimensional microstructures find applications in diffractive optical elements, photonic elements, etc. and can be efficiently fabricated by grayscale lithography. Good process control is important for achieving the desired structures. Metrology methods for grayscale lithography are discussed. Process optimization for grayscale e-beam lithography is explored and various process parameters that affect the grayscale process are discussed.

  15. Characterization of optical material parameters for EUV Lithography applications at PTB

    NASA Astrophysics Data System (ADS)

    Laubis, Christian; Haase, Anton; Soltwisch, Victor; Scholze, Frank

    2015-09-01

    EUV Lithography now reaches the fab floor. The technology ramp up and integration with existing processes will require evolutionary steps in many aspects of the technology. For instance will it be necessary to reduce 3D mask effects like shadowing e.g. by introducing a thinner absorber structure. Continuous progress will be based on using new materials, adapted multilayers, and new reticle designs. Many of these developments are based on simulations and computer models for the design of the required structures and thus require data on the optical properties of the materials involved. In particular when addressing the reticle where the optical function is the target value. Using its more than 25 years of expertise in EUV metrology1, PTB operates instrumentation for reflectometry and scatterometry2 in the EUV and adjacent wavelength ranges and can provide the data for the determination of optical material parameters for individual thin layers. The need for sound optical parameter characterization for the development of alternative EUV materials was thoroughly motivated during the 2015 SPIE Advanced Lithography conference3. The data required is not readily available from databases, as thin film properties - depending on their deposition method and interfaces - may deviate significantly from standard bulk data4. Therefore, better optical constants and a continuous availability of the associated measurement tools are vital for further progress in EUV reticle and optical system design. The ability to vary relevant parameters like wavelength, angle of incidence (AOI), the plane of incidence and polarization is a prerequisite to gather sufficient data to model optical constants. We give details on PTB's measurement capabilities and accessible parameter space for optical material parameter characterization and show some representative data and results.

  16. Reverse-absorbance-modulation-optical lithography for optical nanopatterning at low light levels

    NASA Astrophysics Data System (ADS)

    Majumder, Apratim; Wan, Xiaowen; Masid, Farhana; Pollock, Benjamin J.; Andrew, Trisha L.; Soppera, Olivier; Menon, Rajesh

    2016-06-01

    Absorbance-Modulation-Optical Lithography (AMOL) has been previously demonstrated to be able to confine light to deep sub-wavelength dimensions and thereby, enable patterning of features beyond the diffraction limit. In AMOL, a thin photochromic layer that converts between two states via light exposure is placed on top of the photoresist layer. The long wavelength photons render the photochromic layer opaque, while the short-wavelength photons render it transparent. By simultaneously illuminating a ring-shaped spot at the long wavelength and a round spot at the short wavelength, the photochromic layer transmits only a highly confined beam at the short wavelength, which then exposes the underlying photoresist. Many photochromic molecules suffer from a giant mismatch in quantum yields for the opposing reactions such that the reaction initiated by the absorption of the short-wavelength photon is orders of magnitude more efficient than that initiated by the absorption of the long-wavelength photon. As a result, large intensities in the ring-shaped spot are required for deep sub-wavelength nanopatterning. In this article, we overcome this problem by using the long-wavelength photons to expose the photoresist, and the short-wavelength photons to confine the "exposing" beam. Thereby, we demonstrate the patterning of features as thin as λ/4.7 (137nm for λ = 647nm) using extremely low intensities (4-30 W/m2, which is 34 times lower than that required in conventional AMOL). We further apply a rigorous model to explain our experiments and discuss the scope of the reverse-AMOL process.

  17. Reflection aspherical microlenses for planar optics fabricated by electron-beam lithography.

    PubMed

    Shiono, T; Ogawa, H

    1992-04-15

    Reflection aspherical microlenses are proposed for planar optics. These microlenses have the structure of a nonconcentric elliptical concave mirror. Broadband light can be used for these microlenses because these microlenses have no chromatic aberration. The microlens fabricated by electron-beam lithography and Ag deposition was found to have a smooth surface as designed. The focal length of the microlens was constant independent of the wavelength. The measured spot sizes agreed with diffraction-limited values at two different wavelengths. By using the array of this microlens, multiple images with excellent contrast were obtained under incoherent white-light illumination.

  18. Fabrication of two-dimensional micro patterns for adaptive optics by using laser interference lithography

    NASA Astrophysics Data System (ADS)

    Li, Xinghui; Cai, Yindi; Aihara, Ryo; Shimizu, Yuki; Ito, So; Gao, Wei

    2015-07-01

    This paper presents a fabrication method of two-dimensional micro patterns for adaptive optics with a micrometric or sub-micrometric period to be used for fabrication of micro lens array or two-dimensional diffraction gratings. A multibeam two-axis Lloyd's mirror interferometer is employed to carry out laser interference lithography for the fabrication of two-dimensional grating structures. In the proposed instrument, the optical setup consists of a light source providing a laser beam, a multi-beam generator, two plane mirrors to generate a two-dimensional XY interference pattern and a substrate on which the XY interference pattern is to be exposed. In this paper, pattern exposure tests are carried out by the developed optical configuration optimized by computer simulations. Some experimental results of the XY pattern fabrication will be reported.

  19. Surface modification of a MoSiON phase shift mask to reduce critical dimension variation after exposure to a 193-nm ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Choo, Hyeokseong; Seo, Dongwan; Lim, Sangwoo

    2014-08-01

    Introduction of a MoSi-based phase shift mask (PSM) improves photolithography resolution by causing light to shift phase by 180° thus canceling the overlap. However, when MoSiON PSM was exposed to an ArF excimer laser (λ = 193 nm), a significant increase in patterned critical dimension (CD) was observed. It was confirmed that the CD increase resulted from oxidation progression into the MoSiON layer. In this study, N2O or NH3 plasma treatment and thermal annealing in NH3 effectively suppressed CD variation after ArF laser exposure. While the compositional ratio of Si, N, O, and Mo elements in the MoSiON layer was not changed, an increase in oxygen content only in the top 5 nm was observed. Therefore, it is concluded that slight oxidation of the top surface of MoSiON PSM by introducing either N2O or NH3 plasma treatment or thermal annealing in NH3 suppresses an increase in the patterned CD of MoSiON PSM after exposure to a 193-nm ArF excimer laser.

  20. Multilayer coated optics for an alpha-class extreme ultraviolet lithography system

    SciTech Connect

    Folta, J A; Grabner, R F; Hudyma, R M; Montcalm, C; Schmidt, M A; Spiller, E; Walton, C C; Wedowski, M

    1999-08-25

    We present the results of coating the first set of optical elements for an alpha-class extreme-ultraviolet (EUV) lithography system, the Engineering Test Stand (ETS). The optics were coated with Mo/Si multilayer mirrors using an upgraded DC-magnetron sputtering system. Characterization of the near-normal incidence EUV reflectance was performed using synchrotron radiation from the Advanced Light Source at the Lawrence Berkeley National Laboratory. Stringent requirements were met for these multilayer coatings in terms of reflectance, wavelength matching among the different optics, and thickness control across the diameter of each individual optic. Reflectances above 65% were achieved at 13.35 nm at near-normal angles of incidence. The run-to-run reproducibility of the reflectance peak wavelength was maintained to within 0.4%, providing the required wavelength matching among the seven multilayer-coated optics. The thickness uniformity (or gradient) was controlled to within {+-}0.25% peak-to-valley (P-V) for the condenser optics and {+-}0.1% P-V for the four projection optics, exceeding the prescribed specification for the optics of the ETS.

  1. A novel lithography process for 3D (three-dimensional) interconnect using an optical direct-writing exposure system

    NASA Astrophysics Data System (ADS)

    Azuma, T.; Sekiguchi, M.; Matsuo, M.; Kawasaki, A.; Hagiwara, K.; Matsui, H.; Kawamura, N.; Kishimoto, K.; Nakamura, A.; Washio, Y.

    2010-03-01

    A novel lithography process for 3D (Three-dimensional) interconnect was developed using an optical direct-writing exposure tool. A reflective IR (Infra-red) alignment system allows a direct detection of alignment marks both on front-side and back-side of wafer, and consequently allows feasible micro-fabrication for 3D interconnect using the reversed wafer. A combination of the optical direct-writing exposure tool of Dainippon Screen MFG. Co., Ltd. with the reflective IR alignment system and a high aspect chemically amplified resist of Tokyo Ohka Kogyo Co., Ltd. provides the lithography process exclusively for 12-inch wafer level 3D interconnect.

  2. Freeform lens for off-axis illumination in optical lithography system

    NASA Astrophysics Data System (ADS)

    Wu, Rengmao; Zheng, Zhenrong; Li, Haifeng; Liu, Xu

    2011-06-01

    A method of designing a freeform lens for off-axis illumination (OAI) in an optical lithography system is proposed in this paper. Based on the Snell's law and conservation law of energy, a series of first-order partial differential equations are deduced. Coordinate relations are established with the energy mapping relations by the characteristics of the incident beam and the predetermined irradiance distribution on the target plane. The contours of the freeform lens are calculated by solving partial differential equations numerically. Moreover, the optical performance for OAI is simulated and analyzed. Simulation results show that the irradiance distributions can be well controlled with a maximum uniformity of 95.71% and a maximum efficiency of 99.04%. Tolerance analysis shows that the angular errors of the freeform lens are more sensitive than the coordinate errors.

  3. Thin film 193nm TNK measurement using multi-domain genetic algorithm (MDGA) with a combination of beam profile reflectometry (BPR), absolute ellipsometry (AE), and spectroscopic ellipsometry (SE)

    NASA Astrophysics Data System (ADS)

    Opsal, Jon L.; Leng, Jingmin; Ke, Chih-Ming; Chen, Pei-Hung; Chen, Jeng-Horng; Ku, Yao-Ching

    2003-11-01

    In the l30nm process, controlling the critical dimension uniformity (CDU) within a wafer is crucial. In order to minimize CDU within a wafer, CD swing amplitude against film thickness must be minimized. It is observed that the CD swing amplitude is closely related to the reflectivity of the anti-reflective coating (ARC) layer under the resist. The suppressed reflectivity (ideally zero) from the ARC layer and underlying layers can be achieved by properly selecting a combination of thickness (T), refractive index (N) and extinction coefficient (K) of the ARC layer. Accurate and repeatable measurements of T, N, and K at a wavelength of 193nm play a key role in this film optimization process. In this paper we propose a new method to simultaneously measure T, N, and K for various silicon oxynitride (SION) and organic ARC films. The new methodology uses a multi-domain genetic algorithm (MDGA) to search for global fitting residual minima for SION and organic ARC films using 21-point line-scan data sets logged on each wafer with a combination of BPR, AE and SE measurement technologies. The MDGA-obtained dispersion curves form constituents of a Bruggeman effective medium approximation (EMA) model. By using this unique metrology tool combination, swing amplitudes can be reduced to less than 5nm. The measurement variations of N&K at 193nm from machine to machine on SION and organic ARC films can be minimized to as small as 0.002. We point out that there are no 193nm N&K standards in the world. In this work, we used a set of Therma-Wave standards with thicknesses traceable to NIST standards. We also used the published thermal oxide and crystalline Si dielectric constants (i.e., N&Ks) as our standards for dispersion. The matching of SE (as well as the other technologies) of each tool is ensured through calibrations of SE to the same set of standards. Finally, a recipe using the combination of BPR, AE, and SE technologies allows one to deal with the large TNK variations

  4. Optical Transcutaneous pCO2 Sensor using Soft Lithography Method for Arterial Blood Gas Analysis

    NASA Astrophysics Data System (ADS)

    Kang, Byoung-Ho; Kim, Do-Eok; Leem, Myoung-Kun; Kwon, Dae-Hyuk; Lee, Kwang-Man; Kang, Shin-Won

    2008-10-01

    In this study, we carried out development of non-invasive optical transcutaneous partial pressure of carbon dioxide, pCO2, monitoring system. The purpose of this system is to detect CO2 from outer skin, not from the arterial blood-gathering method. There are advantages about a reduction of analysis time and real-time monitoring that this system might be available. The measurement system is composed of the IR lamp, the pyroelectric sensor including a 4.26 μm optical filter, the optical gas reaction chamber and the signal processing circuit. The optical reaction length of chamber was reduced by 1 mm using the soft-lithography method which CO2 is exhausted in human body as we considered. The fabricated pCO2 monitoring system showed linear result of 6.50×10-6 absorbance/ppm sensitivity for CO2 concentration from 0 ˜5,000 ppm by MFC and about 2 seconds of fast response time. The proposed system can be used in the optical biosensor field for the medical diagnosis such as pCO2 monitoring system and environment monitoring systems.

  5. Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

    NASA Astrophysics Data System (ADS)

    Nagarajan, Rao M.; Rask, Steven D.

    1988-06-01

    A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron

  6. Utilizing laser interference lithography to fabricate hierarchical optical active nanostructures inspired by the blue Morpho butterfly

    NASA Astrophysics Data System (ADS)

    Siddique, Radwanul H.; Faisal, Abrar; Hünig, Ruben; Bartels, Carolin; Wacker, Irene; Lemmer, Uli; Hoelscher, Hendrik

    2014-09-01

    The famous non-iridescent blue of the Morpho butter by is caused by a `Christmas tree' like nanostructure which is a challenge for common fabrication techniques. Here, we introduce a method to fabricate this complex morphology utilizing dual beam interference lithography. We add a reflective coating below the photoresist to create a second interference pattern in vertical direction by exploiting the back reflection from the substrate. This vertical pattern exposes the lamella structure into the photosensitive polymer while the horizontal interference pattern determines the distance of the ridges. The photosensitive polymer is chosen accordingly to create the Christmas tree' like tapered shape. The resulting artificial Morpho replica shows brilliant non-iridescent blue up to an incident angle of 40. Its optical properties are close to the original Morpho structure because the refractive index of the polymer is close to chitin. Moreover, the biomimetic surface is water repellent with a contact angle of 110.

  7. New electron optical column with large field for nanometer e-beam lithography system

    NASA Astrophysics Data System (ADS)

    Ohta, Hiroya; Matsuzaka, Takashi; Saitou, Norio

    1995-05-01

    An electron beam lithography system for nanometer devices has been developed. The target specifications of the system are a Gaussian beam diameter of 10 nm and a beam current of 1 nA, an acceleration voltage of 50 kV, a 500 micrometers X 500 micrometers deflection field and an overlay accuracy of 10 nm (3(sigma) ). To realize such high performance, the following two technologies have been developed for the design of the electron optical column: (1) a low aberration objective lens system with a one stage electrostatic deflector and (2) a thermal field emission (TFE) gun system with a low energy spread and a high brightness Zr/O/W cathode. The exposed results shown are a 30 nm isolated line and a 40 nm lines and spaces. An overlay accuracy of 10 nm are also obtained. This system is capable of being put into practical use in the fabrication of nanometer devices.

  8. Optical activities of large-area SU8 microspirals fabricated by multibeam holographic lithography.

    PubMed

    Wang, Xia; Gao, Wensheng; Hung, Jenny; Tam, Wing Yim

    2014-04-10

    We report on the fabrication of large-area microspirals in SU8 photoresist using a 6+1 beam holographic lithography (HL) technique involving the interference of six linearly polarized side beams and one circularly polarized central beam. In contrast to common photoresist-substrate (glass) configuration, the spirals are fabricated on a substrate with a precured thin SU8 photoresist. This SU8-SU8-glass configuration strengthens the attachment of the spirals to the substrate, and hence enhances the quality of the fabricated spirals. The fabricated SU8 microspirals exhibit large optical activities with a polarization rotation close to 10 deg and a circular dichroism of about 0.5 in the visible range. Our precured substrate method could lift the limitations of the HL method in fabricating large and uniform microstructures or nanostructures.

  9. Towards ultimate optical lithography with NXT:1950i dual stage immersion platform

    NASA Astrophysics Data System (ADS)

    Castenmiller, Tom; van de Mast, Frank; de Kort, Toine; van de Vin, Coen; de Wit, Marten; Stegen, Raf; van Cleef, Stefan

    2010-04-01

    Optical lithography, currently being used for 45-nm semiconductor devices, is expected to be extended further towards the 32-nm and 22-nm node. A further increase of lens NA will not be possible but fortunately the shrink can be enabled with new resolution enhancement methods like source mask optimization (SMO) and double patterning techniques (DPT). These new applications lower the k1 dramatically and require very tight overlay control and CD control to be successful. In addition, overall cost per wafer needs to be lowered to make the production of semiconductor devices acceptable. For this ultimate era of optical lithography we have developed the next generation dual stage NXT:1950i immersion platform. This system delivers wafer throughput of 175 wafers per hour together with an overlay of 2.5nm. Several extensions are offered enabling 200 wafers per hour and improved imaging and on product overlay. The high productivity is achieved using a dual wafer stage with planar motor that enables a high acceleration and high scan speed. With the dual stage concept wafer metrology is performed in parallel with the wafer exposure. The free moving planar stage has reduced overhead during chuck exchange which also improves litho tool productivity. In general, overlay contributors are coming from the lithography system, the mask and the processing. Main contributors for the scanner system are thermal wafer and stage control, lens aberration control, stage positioning and alignment. The back-bone of the NXT:1950i enhanced overlay performance is the novel short beam fixed length encoder grid-plate positioning system. By eliminating the variable length interferometer system used in the previous generation scanners the sensitivity to thermal and flow disturbances are largely reduced. The alignment accuracy and the alignment sensitivity for process layers are improved with the SMASH alignment sensor. A high number of alignment marker pairs can be used without throughput loss, and

  10. A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography

    NASA Astrophysics Data System (ADS)

    Majumder, Apratim; Helms, Phillip L.; Andrew, Trisha L.; Menon, Rajesh

    2016-03-01

    Optical lithography is the most prevalent method of fabricating micro-and nano-scale structures in the semiconductor industry due to the fact that patterning using photons is fast, accurate and provides high throughput. However, the resolution of this technique is inherently limited by the physical phenomenon of diffraction. Absorbance-Modulation-Optical Lithography (AMOL), a recently developed technique has been successfully demonstrated to be able to circumvent this diffraction limit. AMOL employs a dual-wavelength exposure system in conjunction with spectrally selective reversible photo-transitions in thin films of photochromic molecules to achieve patterning of features with sizes beyond the far-field diffraction limit. We have developed a finite-element-method based full-electromagnetic-wave solution model that simulates the photo-chemical processes that occur within the thin film of the photochromic molecules under illumination by the exposure and confining wavelengths in AMOL. This model allows us to understand how the material characteristics influence the confinement to sub-diffraction dimensions, of the transmitted point spread function (PSF) of the exposure wavelength inside the recording medium. The model reported here provides the most comprehensive analysis of the AMOL process to-date, and the results show that the most important factors that govern the process, are the polarization of the two beams, the ratio of the intensities of the two wavelengths, the relative absorption coefficients and the concentration of the photochromic species, the thickness of the photochromic layer and the quantum yields of the photoreactions at the two wavelengths. The aim of this work is to elucidate the requirements of AMOL in successfully circumventing the far-field diffraction limit.

  11. Optimization of BARC process for hyper-NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Lee, Kilyoung; Lee, Junghyung; Lee, Sungkoo; Park, Dongheok; Bok, Cheolkyu; Moon, Seungchan

    2008-03-01

    The extension of current 193nm immersion lithography technology is depending on increasing the numerical aperture (NA). High-resolution imaging requires the decrease of photoresist thickness to compensate for smaller depth of focus (DOF) and prevent pattern collapse. Poor etch selectivity between photoresist and BARC reads to the use of thinner BARC with faster etch-rate. Also, controlling reflectance over a wider range of incident angles for hyper-NA above 1.0 gives more challenge for thin BARC. To reduce substrate reflectivity, various material strategies (dual-layer BARC such as organic/inorganic BARC or organic/organic BARC, Si-based ARC/spin-on carbon (SOC), and so on) have been introduced through many papers. Organic dual-layer BARC is capable of suppressing reflectivity through wide range of incident angles. But, the inevitable increase of its thickness is not a desirable direction due to the decreasing trend of photoresist thickness. When amorphous carbon (a-C) is used as a hardmask for sub-stack, the combination of organic/inorganic BARC (i.e. SiON) is currently well known process. Si-ARC/SOC may be the promising candidates of hardmask because Si component of Si-ARC affords a high etch selectivity to photoresist and its combination with SOC decreases reflectance. The optical constants of above organic materials can be tuned to control the substrate reflectivity for hyper-NA.

  12. Coaxial Lithography

    NASA Astrophysics Data System (ADS)

    Ozel, Tuncay

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowires that can be realized and studied in the laboratory. This thesis focuses on bridging templated electrochemical synthesis and lithography for expanding current synthetic capabilities with respect to materials generality and the ability to tailor two-dimensional growth in the formation of core-shell structures for the rational design and preparation of nanowires with very complex architectures that cannot be made by any other techniques. Chapter 1 introduces plasmonics, templated electrochemical synthesis, and on-wire lithography concepts and their significances within chemistry and materials science. Chapter 2 details a powerful technique for the deposition of metals and semiconductors with nanometer resolution in segment and gap lengths using on-wire lithography, which serves as a new platform to explore plasmon-exciton interactions in the form of long-range optical nanoscale rulers. Chapter 3 highlights an approach for the electrochemical synthesis of solution dispersible core-shell polymeric and inorganic semiconductor nanowires with metallic leads. A photodetector based on a single core-shell semiconductor nanowire is presented to demonstrate the functionality of the nanowires produced using this approach. Chapter 4 describes a new materials general technique, termed coaxial lithography (COAL), bridging templated electrochemical synthesis and lithography for generating coaxial nanowires in a parallel fashion with sub-10 nanometer resolution in both axial and radial dimensions. Combinations of coaxial nanowires composed of metals, metal oxides, metal chalcogenides, conjugated polymers, and a core/shell semiconductor nanowire with an embedded plasmonic nanoring are presented to

  13. Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

    NASA Astrophysics Data System (ADS)

    Lee, Changwoo; Nagabhirava, Bhaskar; Goss, Michael; Wang, Peng; Friddle, Phil; Schmitz, Stafan; Wu, Jian; Yang, Richard; Mignot, Yann; Rassoul, Nouradine; Hamieh, Bassem; Beique, Genevieve; Labonte, Andre; Labelle, Catherine; Arnold, John; Mucci, John

    2015-03-01

    As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a potential cost reduction due to fewer wafer passes and masks required for patterning. However, the EUV lithography technique introduces newer types of resists that are thinner and softer compared to conventional 193nm resists currently being used. The main challenge is to find the key etch process parameters to improve the EUV resist selectivity, reduce LER and LWR, minimize line end shrink, improve tip-to-tip degradation, and avoid line wiggling while still enabling previous schemes such as trench-first-metal-hard-mask (TFMHM), self-aligned via (SAV) and self-aligned contact (SAC). In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.

  14. E-beam lithography and optical near-field lithography: new prospects in fabrication of various grating structures

    NASA Astrophysics Data System (ADS)

    Kley, Ernst-Bernhard; Clausnitzer, Tina

    2003-12-01

    Today"s technologies available for the fabrication of micro structured optical elements are well developed for defined classes of structures. Techniques for very complex optical functions or for combinations of optical functions together with others are more or less in the level of research or labs. A promising approach for complex grating fabrication is the use of optical near field holography (NFH) and e-beam writing for unification of the advantages. The paper wants to show the potential of both techniques itself as well as the potential that arises from their teamwork. The paper demonstrates one and two dimensional gratings, chirped and unidirectional gratings fabricated by NFH using e-beam written masks. It shows also possibilities for the fabrication of gratings on binary, multilevel and continuous optical profiles.

  15. Electron stimulated desorption of the metallic substrate at monolayer coverage: Sensitive detection via 193 nm laser photoionization of neutral aluminum desorbed from CH3O/Al(111)

    NASA Astrophysics Data System (ADS)

    Young, C. E.; Whitten, J. E.; Pellin, M. J.; Gruen, D. M.; Jones, P. L.

    A fortuitous overlap between the gain profile of the 193 nm ArF excimer laser and the Al autoionizing transition (sup 2)S(sub 1/2) (512753/cm) yields to the left (sup 2)P(sup 0)J has been exploited in the direct observation of substrate metal atoms in an electron simulated desorption (ESD) process from the monolayer adsorbate system CH3O/Al(111). The identity of the mass 27 photoion was established as Al(+) by (1) isotopic substitution of C-13 in the methanol employed for methoxy formation, and (2) tunable laser scans utilizing the DJ-2 (J = 3/2, 5/2) intermediate levels at approximately 32436/cm and a 248 nm ionization step. An ESD yield of approximately x 10(exp -6) Al atoms/(electron at 1 keV) was established by comparison with a sputtering experiment in the same apparatus. Velocity distributions measured for the desorbed Al species showed some differences in comparison with methoxy velocity data: a slightly lower peak velocity and a significantly less prominent high-velocity component.

  16. Controlled Light-Matter Coupling for a Single Quantum Dot Embedded in a Pillar Microcavity Using Far-Field Optical Lithography

    NASA Astrophysics Data System (ADS)

    Dousse, A.; Lanco, L.; Suffczyński, J.; Semenova, E.; Miard, A.; Lemaître, A.; Sagnes, I.; Roblin, C.; Bloch, J.; Senellart, P.

    2008-12-01

    Using far-field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling of two quantum dots to the same optical mode is achieved, a milestone for quantum computing.

  17. Manufacturing of freeform micro-optical elements by mask-less laser direct write lithography and replication by imprinting

    NASA Astrophysics Data System (ADS)

    Kuna, L.; Leiner, C.; Ruttloff, S.; Nemitz, W.; Reil, F.; Hartmann, P.; Wenzl, F. P.; Sommer, C.

    2016-09-01

    Today, freeform micro-optical structures are desired components in many photonic and optical applications such as lighting and detection systems due to their compactness, ease of system integration and superior optical performance. The high complexity of a freeform structure's arbitrary surface profile and the need for high throughput upon fabrication require novel approaches for their integration into a manufacturing process. For the fabrication of polymer freeform optics, in this contribution we discuss two principal technologies, mask-less laser direct write lithography (MALA) and replication from the as-fabricated master by imprinting. We show the high flexibility in design and rapid-prototyping of freeform optical microstructures that can be achieved by such an approach. First, the original structures known as masters are fabricated using MALA. Because of the specific requirements on shape and height (>50μm) of the microstructures, laser writing and photoresist processing have to be performed within a narrow range of fabrication parameters. Subsequently, UV-soft lithography based replication is used for serial production of the freeform micro-optical elements within a batch process. Aided by profilometry, optical microscopy and atomic force microscopy, the fidelity of the fabricated freeform microoptical elements to the design is characterised. Finally, the light intensity distribution on a target plane caused by the freeform micro-optical element illuminated with an LED is determined and compared with the predicted one.

  18. Excimer laser ablation lithography applied to the fabrication of reflective diffractive optics

    NASA Astrophysics Data System (ADS)

    Flury, M.; Benatmane, A.; Gérard, P.; Montgomery, P. C.; Fontaine, J.; Engel, T.; Schunck, J. P.; Fogarassy, E.

    2003-03-01

    We propose a low cost technique for the production of diffractive optical elements (DOE). These elements are devoted to high power lasers beam shaping in the mid-infrared wavelengths. This process called laser ablation lithography (LAL), may seem similar to laser beam writing (LBW) in the way the whole DOE's design is reproduced pixel by pixel on the substrate placed on a computer controlled XY translation stage. A first difference is that the photoresist is not exposed with UV light but is directly ablated with short excimer laser pulses. Furthermore, with LAL technique the size of the smallest pixel ( 5 μm×5 μm) is more than 10 times greater than those produced by LBW. We discuss in details the experimental set-up for LAL and demonstrate that it gives a resolution up to 10 times greater than photolithography with flexible masks. This makes LAL a promising solution for the production of DOE for use with Nd:YAG lasers. New applications of DOEs are finally introduced with high power lasers sources, such as laser marking or multi-point brazing.

  19. Physical Limitations in Lithography for Microelectronics.

    ERIC Educational Resources Information Center

    Flavin, P. G.

    1981-01-01

    Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

  20. Analyzing velocity map images to distinguish the primary methyl photofragments from those produced upon C-Cl bond photofission in chloroacetone at 193 nm

    SciTech Connect

    Alligood, Bridget W.; Straus, Daniel B.; Butler, Laurie J.

    2011-07-21

    We use a combination of crossed laser-molecular beam scattering experiments and velocity map imaging experiments to investigate the three primary photodissociation channels of chloroacetone at 193 nm: C-Cl bond photofission yielding CH{sub 3}C(O)CH{sub 2} radicals, C-C bond photofission yielding CH{sub 3}CO and CH{sub 2}Cl products, and C-CH{sub 3} bond photofission resulting in CH{sub 3} and C(O)CH{sub 2}Cl products. Improved analysis of data previously reported by our group quantitatively identifies the contribution of this latter photodissociation channel. We introduce a forward convolution procedure to identify the portion of the signal, derived from the methyl image, which results from a two-step process in which C-Cl bond photofission is followed by the dissociation of the vibrationally excited CH{sub 3}C(O)CH{sub 2} radicals to CH{sub 3}+ COCH{sub 2}. Subtracting this from the total methyl signal identifies the methyl photofragments that result from the CH{sub 3}+ C(O)CH{sub 2}Cl photofission channel. We find that about 89% of the chloroacetone molecules undergo C-Cl bond photofission to yield CH{sub 3}C(O)CH{sub 2} and Cl products; approximately 8% result in C-C bond photofission to yield CH{sub 3}CO and CH{sub 2}Cl products, and the remaining 2.6% undergo C-CH{sub 3} bond photofission to yield CH{sub 3} and C(O)CH{sub 2}Cl products.

  1. Fabrication of a deoxyribonucleic acid polymer ridge waveguide electro-optic modulator by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Fehrman Cory, Emily Marie

    The purpose of this dissertation is to develop the nanoimprint lithography (NIL) technique for direct patterning of the deoxyribonucleic acid biopolymer DNA-CTMA. The Mach Zehnder modulator was chosen as the test device to demonstrate the NIL patterning technique for DNA-CTMA as well as the unique optical and electrical properties of the DNA-CTMA as a cladding material for poled electro-optic polymers. Towards this goal, a DNA-CTMA clad inverted ridge waveguide is demonstrated at 633 nm and 1550 nm, the structure of which is patterned directly in the DNA-CTMA cladding by NIL. Additionally, EO modulation is demonstrated in a slab waveguide structure with DNA-CTMA cladding and SEO110 EO polymer core. Marine-derived deoxyribonucleic acid biopolymer (DNA-CTMA) is a green, nontoxic, low cost optical polymer material derived from waste products of the salmon fishing industry. It exhibits low optical loss at 1550 nm, forms a thin flexible film, is compatible with existing poled polymer technologies, increases the poling efficiency when used as a low resistivity cladding layer, and is thermally stable to 200 oC. Due to chemical incompatibility with the photoresists and the associated solvents, NIL has been developed for patterning the DNA biopolymer cladding to form an inverted ridge waveguide for the basis of the Mach Zehnder modulator. While DNA-CTMA presents significant advantages over other commonly used cladding materials for the 1550 nm wavelength range, one of the commonly used bands for optical communications, the mechanical properties and environmental susceptibility of the material poses significant fabrication challenges. A study of the effects of optical and mechanical effects of environmental humidity exposure are presented for the DNA-CTMA and SEO110 polymers used in the inverted ridge waveguide. While the soft, flexible nature of the DNA-CTMA is desirable for certain applications, this presents a challenge in producing a clean polished window for optical

  2. Critical assessment of the transport of intensity equation as a phase recovery technique in optical lithography

    NASA Astrophysics Data System (ADS)

    Shanker, Aamod; Sczyrba, Martin; Connolly, Brid; Kalk, Franklin; Neureuther, Andy; Waller, Laura

    2014-03-01

    Photomasks are expected to have phase effects near edges due to their 3D topography, which can be modeled as imaginary boundary layers in thin mask simulations. We apply a modified transport of intensity (TIE) phase imaging technique to through-focus aerial images of photomasks in order to recover polarization-dependent edge effects. We use AIMS measurements with 193nm light to study the dependence of recovered phase on mask type and geometry. The TIE is an intensity conservation equation that quantitatively relates phase in the wafer plane to intensity through-focus. Here, we develop a modified version of the TIE for strongly absorbing objects, and apply it to recover wafer plane phase of attenuating masks. The projection printer blurs the fields at the wafer plane by its point spread function, hence an effective deconvolution is used to predict the boundary layers at the mask that best approximate the measured thick mask edge effects. Computation required for the inverse problem is fast and independent of mask geometry, unlike FDTD computations.

  3. Quantifying imaging performance bounds of extreme dipole illumination in high NA optical lithography

    NASA Astrophysics Data System (ADS)

    Lee, Myungjun; Smith, Mark D.; Biafore, John; Graves, Trey; Levy, Ady

    2016-10-01

    We present a framework to analyze the performance of optical imaging in a hyper numerical aperture (NA) immersion lithography scanner. We investigate the method to quantify imaging performance by computing upperand lower-bounds on the threshold normalized image log-slope (NILS) and the depth of focus (DOF) in conjunction with the traditional image quality metrics such as the mask error enhancement factor (MEEF) and the linearity for various different pitches and line to space (LS) duty cycles. The effects of the interaction between the light illumination and the feature size are extensively characterized based on the aerial image (AI) behavior in particular for the extreme dipole illumination that is one of the commonly used off-axis illuminations for sub-100nm logic and memory devices, providing resolution near the physical limit of an optical single patterning step. The proposed aerial imaging-based DOF bounds are compared to the results obtained from an experimentally calibrated resist model, and we observed good agreement. In general, the extreme dipole illumination is only optimal for a single particular pitch, therefore understanding the through-pitch imaging performance bound, which depends on the illumination shape, pattern size, and process conditions, is critically important. We find that overall imaging performance varies depending upon the number of diffracted beams passing through the scanner optics. An even number of beams provides very different trends compared to the results from an odd-number of beams. This significant non-linear behavior occurs in certain pitch regions corresponding to 3 beam interference imaging. In this region the imaging performance and the pattern printability become extremely sensitive to the LS duty cycle. In addition, there is a notable tradeoff between the DOF and the NILS that is observed in the problematic 3-beam region and this tradeoff eventually affects the achievable process window (PW). Given the practical real

  4. Hyperboloid solgel microlens array fabricated by soft-lithography for optical coupling

    NASA Astrophysics Data System (ADS)

    He, Miao; Bu, Jing; Yuan, Xiaocong; Niu, Hanben; Peng, Xiang

    2006-02-01

    It is known that the best way to correct spherical aberrations is the use of aspheric microlenses in optical systems, where a single aspheric microlens can be employed to replace a compound of spherical microlenses in a compact design. However the fabrication of aspheric microlenses is often complex because expensive high-energy beam-sensitive (HEBS) gray scale mask is needed in the fabrication process. In this paper, we reported a cost-effective fabrication method, with a combination of the sample-inverted reflow technique and the soft lithography replication method, to fabricate hyperboloid refractive microlens arrays (MLAs) in the inorganic-organic hybrid SiO II-ZrO II sol-gel material. The fabrication procedures involved two basic steps. Firstly, a master of hyperboloid MLA was made in photoresist by the sample-inverted reflow technique. Secondly, a negative mold of the master was built by casting polydimethylsiloxane (PDMS) to a silicone elastomer against the master, and then the profile was impressed onto the sol-gel glass. As a result, the fabricated sol-gel MLAs have been obtained with excellent smooth profiles, having negligible discrepancies from the profiles of the ideal hyperboloid MLAs. The root-mean-square roughness values (Rq) of the surface of MLA were measured as 1.2 nm in the central areas and 2.1 nm in the outskirts of the lens. In an application of coupling a laser diode (LD) to a single-mode fibre (SMF), we proposed a two-MLA coupling scheme where two revolved-hyperboloid MLAs were back to back introduced between the LD and the SMF. In this configuration, the coupling efficiency has achieved 83.4% (-0.79 dB).

  5. Thirty years of lithography simulation

    NASA Astrophysics Data System (ADS)

    Mack, Chris A.

    2005-05-01

    Thirty years ago Rick Dill and his team at IBM published the first account of lithography simulation - the accurate description of semiconductor optical lithography by mathematical equations. Since then, lithography simulation has grown dramatically in importance in four important areas: as a research tool, as a development tool, as a manufacturing tool, and as a learning tool. In this paper, the history of lithography simulations is traced from its roots to today"s indispensable tools for lithographic technology development. Along the way, an attempt will be made to define the true value of lithography simulation to the semiconductor industry.

  6. EUV lithography imaging using novel pellicle membranes

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan; Vanpaemel, Johannes; Lee, Jae Uk; Adelmann, Christoph; Zahedmanesh, Houman; Huyghebaert, Cedric; Gallagher, Emily E.

    2016-03-01

    EUV mask protection against defects during use remains a challenge for EUV lithography. A stand-off protective membrane - a pellicle - is targeted to prevent yield losses in high volume manufacturing during handling and exposure, just as it is for 193nm lithography. The pellicle is thin enough to transmit EUV exposure light, yet strong enough to remain intact and hold any particles out of focus during exposure. The development of pellicles for EUV is much more challenging than for 193nm lithography for multiple reasons including: high absorption of most materials at EUV wavelength, pump-down sequences in the EUV vacuum system, and exposure to high intensity EUV light. To solve the problems of transmission and film durability, various options have been explored. In most cases a thin core film is considered, since the deposition process for this is well established and because it is the simplest option. The transmission specification typically dictates that membranes are very thin (~50nm or less), which makes both fabrication and film mechanical integrity difficult. As an alternative, low density films (e.g. including porosity) will allow thicker membranes for a given transmission specification, which is likely to improve film durability. The risk is that the porosity could influence the imaging. At imec, two cases of pellicle concepts based on reducing density have been assessed : (1) 3D-patterned SiN by directed self-assembly (DSA), and (2) carbon nanomaterials such as carbon nanotubes (CNT) and carbon nanosheets (CNS). The first case is based on SiN membranes that are 3D-patterned by Directed Self Assembly (DSA). The materials are tested relative to the primary specifications: EUV transmission and film durability. A risk assessment of printing performance is provided based on simulations of scattered energy. General conclusions on the efficacy of various approaches will provided.

  7. Off-axis illumination of lithography tool

    NASA Astrophysics Data System (ADS)

    Xing, Han; Lin, Li; Bin, Ma

    2013-12-01

    Lithography tool is a necessary part for LSI and VLSI. The illumination system design is an important part in the lithography optical system design. Off-axis illumination technology is an effective way to reducing resolution of lithography. The paper introduction the basic components of lithography tool, the principle of off-axis illumination reducing the resolution of lithography and focus on the two implementations of OAI technology, finally point out advantages and disadvantage of the two implementations.

  8. Lithography options for the 32nm half pitch node and their implications on resist and material technology

    NASA Astrophysics Data System (ADS)

    Gronheid, Roel; Hendrickx, Eric; Wiaux, Vincent; Maenhoudt, Mireille; Goethals, Mieke; Vandenberghe, Geert; Ronse, Kurt

    2008-03-01

    There still remain three major technological lithography options for high volume manufacturing at the 32nm half pitch node: 193nm immersion lithography with high index materials, enabling NA>1.6 193nm double patterning and EUV lithography. In this paper the pros and cons of these three options will be discussed. Particular interest will be paid to the consequences of the final choice on the resist technology. High index 193nm immersion lithography also requires high index resist materials, which are under development but still far removed from the target refractive index and absorbance specifications not to mention lithographical performance. For double patterning the pitch may be relaxed, but the resists still need to be able to print very narrow lines and/or trenches. Moreover, it would be preferred for the resists to support pattern or image freezing techniques in order to step away from the litho-etch-litho-etch approach and make double patterning more cost effective. For EUV the resist materials need to meet very aggressive sensitivity specifications. In itself this is possible, but it is difficult to simultaneously maintain performance in terms of resolution and line width roughness. A new parameter (K LUP) for assessing resist performance in terms of these three performance criteria will be introduced.

  9. Investigation and improvement of patterning characteristics for annular illumination optical lithography at the periodical pattern ends

    NASA Astrophysics Data System (ADS)

    Horiuchi, Toshiyuki; Harada, Katsuhiro; Takeuchi, Yoshinobu; Mimura, Yoshiaki; Tamechika, Emi

    1995-07-01

    This article describes particular patterning characteristics of annular illumination lithography and a method to improve them. Annular illumination lithography is one of the most practical methods to enhance resolution and enlarge focus latitude. However, improving the patterning characteristics is not sufficient at the ends of periodical patterns in spite of superior performance at the periodical parts. Here, the degradation of the patten profiles at the periodical ends are investigated in detail, and size-modification of the end patterns is proposed. By making the reticle pattern widths a little wider only at the ends, end-pattern degradation is greatly improved, and practical depth-of-focus is favorably extended.

  10. Lithography strategy for 65-nm node

    NASA Astrophysics Data System (ADS)

    Borodovsky, Yan A.; Schenker, Richard E.; Allen, Gary A.; Tejnil, Edita; Hwang, David H.; Lo, Fu-Chang; Singh, Vivek K.; Gleason, Robert E.; Brandenburg, Joseph E.; Bigwood, Robert M.

    2002-07-01

    Intel will start high volume manufacturing (HVM) of the 65nm node in 2005. Microprocessor density and performance trends will continue to follow Moore's law and cost-effective patterning solutions capable of supporting it have to be found, demonstrated and developed during 2002-2004. Given the uncertainty regarding the readiness and respective capabilities of 157nm and 193nm lithography to support 65nm technology requirements, Intel is developing both lithographic options and corresponding infrastructure with the intent to use both options in manufacturing. Development and use of dual lithographic options for a given technology node in manufacturing is not a new paradigm for Intel: whenever introduction of a new exposure wavelength presented excessive risk to the manufacturing schedule, Intel developed parallel patterning approaches in time for the manufacturing ramp. Both I-line and 248nm patterning solutions were developed and successfully used in manufacturing of the 350nm node at Intel. Similarly, 248nm and 193nm patterning solutions were fully developed for 130nm node high volume manufacturing.

  11. Coaxial lithography.

    PubMed

    Ozel, Tuncay; Bourret, Gilles R; Mirkin, Chad A

    2015-04-01

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowire that can be created and studied in the laboratory. Here, we report a high-throughput technique that can be used to prepare coaxial nanowires with sub-10 nm control over the architectural parameters in both axial and radial dimensions. The method, termed coaxial lithography (COAL), relies on templated electrochemical synthesis and can create coaxial nanowires composed of combinations of metals, metal oxides, metal chalcogenides and conjugated polymers. To illustrate the possibilities of the technique, a core/shell semiconductor nanowire with an embedded plasmonic nanoring was synthesized--a structure that cannot be prepared by any previously known method--and its plasmon-excitation-dependent optoelectronic properties were characterized.

  12. Efficient E-Beam Lithography Exposure Strategies for Diffractive X-ray Optics

    SciTech Connect

    Guzenko, V. A.; Vila-Comamala, J.; Gorelick, S.; David, C.; Romijn, J.

    2011-09-09

    Exposure of structures with rotational symmetry by means of electron beam lithography is not trivial, because the e-beam writers are usually designed to deal with the data defined in Cartesian coordinates. Fabrication of circular nanostructures like Fresnel zone plates (FZPs) for x-ray microscopy applications requires exposures with resolution well below 1 nm. Therefore, special attention has to be paid to the efficient exposure data preparation, which will guarantee required precision and allow keeping the exposure time low. In this article, we describe in detail an optimized strategy that was applied for exposure of FZPs by the Vistec EBPG5000Plus e-beam lithography tool. Direct programming of exposure files allowed us to use fully the capabilities of this e-beam writer to expose efficiently and reproducibly FZPs with desired characteristics in both positive and negative tone resists.

  13. Challenges with hyper-NA (NA>1.0) polarized light lithography for sub λ/4 resolution

    NASA Astrophysics Data System (ADS)

    Flagello, Donis G.; Hansen, Steven; Geh, Bernd; Totzeck, Michael

    2005-05-01

    The use of immersion technology will extend the lifetime of 193nm and 157nm lithography by enabling numerical apertures (NA) much greater than 1.0. This paper explores the effects that will occur when the high NA systems are augmented with polarization.. Specifically we show that there are strong interactions between the polarization induced by the reticle and polarization in the optics. This has a direct impact on the across-field specification of the polarization of the optical system as it causes a large variation in the imaging impact in photoresist. The impact of lens and reticle birefringence on the imaging is also analyzed. We show that reticle birefringence should not be a major concern when the birefringence is maintained to 2nm/cm - 4nm/cm levels. The lens can be modeled by a Jones matrix approach, where multiple pupils must be defined for each polarization state. We show the impact of the optical components by using a rigorous photoresist simulation on the process window of sub-50nm features using NA>1.3. The simulator uses a full Maxwell equation solver for the mask, polarized illumination, a Jones matrix approach for the pupil, and a photoresist simulation with calibrated model. The photoresist process is also shown to interact with polarization. Different photoresist will show varying degrees of sensitivity to polarization variation.

  14. Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system

    NASA Astrophysics Data System (ADS)

    Jiang, Ximan

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  15. EUV lithography

    NASA Astrophysics Data System (ADS)

    Kemp, Kevin; Wurm, Stefan

    2006-10-01

    Extreme ultraviolet lithography (EUVL) technology and infrastructure development has made excellent progress over the past several years, and tool suppliers are delivering alpha tools to customers. However, requirements in source, mask, optics, and resist are very challenging, and significant development efforts are still needed to support beta and production-level performance. Some of the important advances in the past few years include increased source output power, tool and optics system development and integration, and mask blank defect reduction. For example, source power has increased to levels approaching specification, but reliable source operation at these power levels has yet to be fully demonstrated. Significant efforts are also needed to achieve the resolution, line width roughness, and photospeed requirements for EUV photoresists. Cost of ownership and extendibility to future nodes are key factors in determining the outlook for the manufacturing insertion of EUVL. Since wafer throughput is a critical cost factor, source power, resist sensitivity, and system design all need to be carefully considered. However, if the technical and business challenges can be met, then EUVL will be the likely technology of choice for semiconductor manufacturing at the 32, 22, 16 and 11 nm half-pitch nodes. To cite this article: K. Kemp, S. Wurm, C. R. Physique 7 (2006).

  16. Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography.

    PubMed

    Sommargren, G E; Seppala, L G

    1993-12-01

    A condenser system couples the radiation source to an imaging system, controlling the uniformity and partial coherence at the object, which ultimately affects the characteristics of the aerial image. A soft-x-ray projection lithography system based on a ring-field imaging system and a laser-produced plasma x-ray source places considerable constraints on the design of a condenser system. Two designs are proposed, critical illumination and Köhler illumination, each of which requires three mirrors and scanning for covering the entire ring field with the required uniformity and partial coherence. Images based on Hopkins' formulation of partially coherent imaging are simulated.

  17. Large-area zinc oxide nanorod arrays templated by nanoimprint lithography: control of morphologies and optical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Chen; Huang, Xiaohu; Liu, Hongfei; Chua, Soo Jin; Ross, Caroline A.

    2016-12-01

    Vertically aligned, highly ordered, large area arrays of nanostructures are important building blocks for multifunctional devices. Here, ZnO nanorod arrays are selectively synthesized on Si substrates by a solution method within patterns created by nanoimprint lithography. The growth modes of two dimensional nucleation-driven wedding cakes and screw dislocation-driven spirals are inferred to determine the top end morphologies of the nanorods. Sub-bandgap photoluminescence of the nanorods is greatly enhanced by the manipulation of the hydrogen donors via a post-growth thermal treatment. Lasing behavior is facilitated in the nanorods with faceted top ends formed from wedding cakes growth mode. This work demonstrates the control of morphologies of oxide nanostructures in a large scale and the optimization of the optical performance.

  18. Thin film cryogenic thermometers defined with optical lithography for thermomagnetic measurements on films.

    PubMed

    Nelson, J; Goldman, A M

    2015-05-01

    Resistance thermometers are common secondary thermometers in cryogenic applications. Bulk RuO2 thermometers are used in dilution refrigerators because of their low magnetoresistances in addition to their temperature sensitivity. Thermoelectric and thermomagnetic measurements require multiple thermometers to measure temperature differences. Here, we present a method to fabricate thin film RuO2 thermometers directly onto an experimental substrate. This enhances thermal contact between thermometers and films whose thermoelectric or thermomagnetic properties may be measured. Commercial thermometers have higher temperature sensitivities than the thermometers presented in this study, but commercial thermometers must be carefully heat sunk to the cryostat or sample to be useful. Thin film thermometers can be patterned with ultraviolet (UV) lithography. This allows both the size of the thermometer and its distance from the sample, when also patterned with UV lithography, to be on the order of micrometers. A universal calibration curve for these thin film thermometers has not been produced. The efficacy of these thermometers has been demonstrated through measurements of the Nernst effect in Nb. In this study, the thin film thermometers were calibrated using the cryostat thermometers.

  19. Hydrogen Migration and Vinylidene Pathway for Formation of Methane in the 193 nm Photodissociation of Propene: CH3CH=CH2 and CD3CD=CD2

    NASA Technical Reports Server (NTRS)

    Zhao, Yi-Lei; Laufer, Allan H.; Halpern, Joshua B.; Fahr, Askar

    2007-01-01

    Photodissociation channels and the final product yields from the 193 nm photolysis of propene-h6 (CH2=CHCH3) and propene-d6 (CD2=CDCD3) have been investigated, employing gas chromatography, mass spectroscopy, and flame ionization (GC/MS/FID) detection methods. The yields of methane as well as butadiene relative to ethane show considerable variations when propene-h6 or propene-d6 are photolyzed. This suggests significant variances in the relative importance of primary photolytic processes and/or secondary radical reactions, occurring subsequent to the photolysis. Theoretical calculations suggest the potential occurrence of an intramolecular dissociation through a mechanism involving vinylidene formation, accompanied by an ethylenic H-migration through the pi-orbitals. This process affects the final yields of methane-h4 versus methane-d4 with respect to other products. The product yields from previous studies of the 193 nm photolysis of methyl vinyl ketone-h6 and -d6 (CH2=CHCOCH3, CD2=CDCOCD3), alternative precursors for generating methyl and vinyl radicals, are compared with the current results for propene.

  20. A novel condenser for EUV lithography ring-field projection optics

    SciTech Connect

    Chapman, H; Nugent, K A

    1999-07-15

    A condenser for a ring-field extreme ultra-violet (EUV) projection lithography camera is presented. The condenser consists of a gently undulating mirror, that we refer to as a ripple plate, and which is illuminated by a collimated beam at grazing incidence. The light is incident along the ripples rather than across them, so that the incident beam is reflected onto a cone and subsequently focused on to the arc of the ring field. A quasistationary illumination is achieved, since any one field point receives light from points on the ripples, which are distributed throughout the condenser pupil. The design concept can easily be applied to illuminate projection cameras with various ring-field and numerical aperture specifications. Ray-tracing results are presented of a condenser for a 0.25 NA EUV projection camera.

  1. Thermal field emission sources and optics for Gaussian electron-beam lithography

    NASA Astrophysics Data System (ADS)

    Chisholm, Tom; Wallman, Bernard A.; Romijn, Johannes C.

    1995-09-01

    The use of Schottky emitters has enabled the designers of Gaussian vector-scan e-beam lithography equipment to meet the ever more stringent demands of the semiconductor industry. Although these emitters are expensive, their long life means that they are economical in total cost. Measurements of the influence of noise on the drives to each element of the Leica EBPG- 5FE column show that the only critical parts are the beam alignment units. Stable, low-noise drivers allow the beam positional noise to be within acceptable limits. A numerical technique has been developed to compute the total spot-size in the presence of spherical and chromatic aberrations and this allows the efficiency of the automatic spot optimization routines of the EBPG-5FE to be examined. The present emitter in the EBPG-5FE in DIMES has been in operation since August 1993 and stable and reproducible performance is obtained. The machine is in constant use for a wide range of tasks.

  2. Demonstration of EDA flow for massively parallel e-beam lithography

    NASA Astrophysics Data System (ADS)

    Brandt, P.; Belledent, J.; Tranquillin, C.; Figueiro, T.; Meunier, S.; Bayle, S.; Fay, A.; Milléquant, M.; Icard, B.; Wieland, M.

    2014-03-01

    Today's soaring complexity in pushing the limits of 193nm immersion lithography drives the development of other technologies. One of these alternatives is mask-less massively parallel electron beam lithography, (MP-EBL), a promising candidate in which future resolution needs can be fulfilled at competitive cost. MAPPER Lithography's MATRIX MP-EBL platform has currently entered an advanced stage of development. The first tool in this platform, the FLX 1200, will operate using more than 1,300 beams, each one writing a stripe 2.2μm wide. 0.2μm overlap from stripe to stripe is allocated for stitching. Each beam is composed of 49 individual sub-beams that can be blanked independently in order to write in a raster scan pixels onto the wafer.

  3. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  4. Preliminary characterisation of new glass reference materials (GSA-1G, GSC-1G, GSD-1G and GSE-1G) by laser ablation-inductively coupled plasma-mass spectrometry using 193 nm, 213 nm and 266 nm wavelengths

    USGS Publications Warehouse

    Guillong, M.; Hametner, K.; Reusser, E.; Wilson, S.A.; Gunther, D.

    2005-01-01

    New glass reference materials GSA-1G, GSC-1G, GSD-1G and GSE-1G have been characterised using a prototype solid state laser ablation system capable of producing wavelengths of 193 nm, 213 nm and 266 nm. This system allowed comparison of the effects of different laser wavelengths under nearly identical ablation and ICP operating conditions. The wavelengths 213 nm and 266 nm were also used at higher energy densities to evaluate the influence of energy density on quantitative analysis. In addition, the glass reference materials were analysed using commercially available 266 nm Nd:YAG and 193 nm ArF excimer lasers. Laser ablation analysis was carried out using both single spot and scanning mode ablation. Using laser ablation ICP-MS, concentrations of fifty-eight elements were determined with external calibration to the NIST SRM 610 glass reference material. Instead of applying the more common internal standardisation procedure, the total concentration of all element oxide concentrations was normalised to 100%. Major element concentrations were compared with those determined by electron microprobe. In addition to NIST SRM 610 for external calibration, USGS BCR-2G was used as a more closely matrix-matched reference material in order to compare the effect of matrix-matched and non matrix-matched calibration on quantitative analysis. The results show that the various laser wavelengths and energy densities applied produced similar results, with the exception of scanning mode ablation at 266 nm without matrix-matched calibration where deviations up to 60% from the average were found. However, results acquired using a scanning mode with a matrix-matched calibration agreed with results obtained by spot analysis. The increased abundance of large particles produced when using a scanning ablation mode with NIST SRM 610, is responsible for elemental fractionation effects caused by incomplete vaporisation of large particles in the ICP.

  5. Polymer optical waveguide with multiple graded-index cores for on-board interconnects fabricated using soft-lithography.

    PubMed

    Ishigure, Takaaki; Nitta, Yosuke

    2010-06-21

    We successfully fabricate a polymer optical waveguide with multiple graded-index (GI) cores directly on a substrate utilizing the soft-lithography method. A UV-curable polymer (TPIR-202) supplied from Tokyo Ohka Kogyo Co., Ltd. is used, and the GI cores are formed during the curing process of the core region, which is similar to the preform process we previously reported. We experimentally confirm that near parabolic refractive index profiles are formed in the parallel cores (more than 50 channels) with 40 microm x 40 microm size at 250-microm pitch. Although the loss is still as high as 0.1 approximately 0.3 dB/cm at 850 nm, which is mainly due to scattering loss inherent to the polymer matrix, the scattering loss attributed to the waveguide's structural irregularity could be sufficiently reduced by a graded refractive index profile. For comparison, we fabricate step-index (SI)-core waveguides with the same materials by means of the same process. Then, we evaluate the inter-channel crosstalk in the SI- and GI-core waveguides under almost the same conditions. It is noteworthy that remarkable crosstalk reduction (5 dB and beyond) is confirmed in the GI-core waveguides, since the propagating modes in GI-cores are tightly confined near the core center and less optical power is found near the core cladding boundary. This significant improvement in the inter-channel crosstalk allows the GI-core waveguides to be utilized for extra high-density on-board optical interconnections.

  6. A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

    NASA Astrophysics Data System (ADS)

    Sewell, James S.; Bozada, Christopher A.

    1994-02-01

    Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially

  7. A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

    NASA Technical Reports Server (NTRS)

    Sewell, James S.; Bozada, Christopher A.

    1994-01-01

    Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially

  8. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Hatakeyama, Masahiro; Terao, Kenji; Watanabe, Hidehiro

    2016-04-01

    Extreme ultraviolet lithography (EUVL) patterned mask defect detection is a major issue that must be addressed to realize EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics for integration into a mask inspection system, and the resulting PEM system performs well in half-pitch (hp) 16-nm-node EUVL patterned mask inspection applications. A learning system has been used in this PEM patterned mask inspection tool. The PEM identifies defects using the "defectivity" parameter that is derived from the acquired image characteristics. The learning system has been developed to reduce the labor and the costs associated with adjustment of the PEM's detection capabilities to cope with newly defined mask defects. The concepts behind this learning system and the parameter optimization flow are presented here. The learning system for the PEM is based on a library of registered defects. The learning system then optimizes the detection capability by reconciling previously registered defects with newly registered defects. Functional verification of the learning system is also described, and the system's detection capability is demonstrated by applying it to the inspection of hp 11-nm EUV masks. We can thus provide a user-friendly mask inspection system with reduced cost of ownership.

  9. Hybrid source mask optimization for robust immersion lithography.

    PubMed

    Ma, Xu; Han, Chunying; Li, Yanqiu; Wu, Bingliang; Song, Zhiyang; Dong, Lisong; Arce, Gonzalo R

    2013-06-20

    To keep pace with the shrinkage of critical dimension, source and mask optimization (SMO) has emerged as a promising resolution enhancement technique to push the resolution of 193 nm argon fluoride immersion lithography systems. However, most current pixelated SMO approaches relied on scalar imaging models that are no longer accurate for immersion lithography systems with hyper-NA (NA>1). This paper develops a robust hybrid SMO (HSMO) algorithm based on a vector imaging model capable of effectively improving the robustness of immersion lithography systems to defocus and dose variations. The proposed HSMO algorithm includes two steps. First, the individual source optimization approach is carried out to rapidly reduce the cost function. Subsequently, the simultaneous SMO approach is applied to further improve the process robustness by exploiting the synergy in the joint optimization of source and mask patterns. The conjugate gradient method is used to update the source and mask pixels. In addition, a source regularization approach and source postprocessing are both used to improve the manufacturability of the optimized source patterns. Compared to the mask optimization method, the HSMO algorithm achieves larger process windows, i.e., extends the depth of focus and exposure latitude, thus more effectively improving the process robustness of 45 nm immersion lithography systems.

  10. Defectivity reduction studies for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Matsunaga, Kentaro; Kondoh, Takehiro; Kato, Hirokazu; Kobayashi, Yuuji; Hayasaki, Kei; Ito, Shinichi; Yoshida, Akira; Shimura, Satoru; Kawasaki, Tetsu; Kyoda, Hideharu

    2007-03-01

    Immersion lithography is widely expected to meet the manufacturing requirements of future device nodes. A critical development in immersion lithography has been the construction of a defect-free process. Two years ago, the authors evaluated the impact of water droplets made experimentally on exposed resist films and /or topcoat. (1) The results showed that the marks of drying water droplet called watermarks became pattern defects with T-top profile. In the case that water droplets were removed by drying them, formation of the defects was prevented. Post-exposure rinse process to remove water droplets also prevented formation of the defects. In the present work, the authors evaluated the effect of pre- and post-exposure rinse processes on hp 55nm line and space pattern with Spin Rinse Process Station (SRS) and Post Immersion Rinse Process Station (PIR) modules on an inline lithography cluster with the Tokyo Electron Ltd. CLEAN TRACK TM LITHIUS TM i+ and ASML TWINSCAN XT:1700Fi , 193nm immersion scanner. It was found that total defectivity is decreased by pre- and post-exposure rinse. In particular, bridge defects and large bridge defects were decreased by pre- and post-exposure rinse. Pre- and post-exposure rinse processes are very effective to reduce the bridge and large bridge defects of immersion lithography.

  11. Optical inspection of EPL stencil masks

    NASA Astrophysics Data System (ADS)

    Welsh, James; McCallum, Martin; Okada, Masashi

    2003-06-01

    We are now at a major junction in lithography where non-optical lithographies, such as Electron Projection Lithography (EPL) [1], are being introduced. The mask used in EPL is a non-transparent silicon substrate with a thin silicon (~2μm) membrane with openings for electrons to pass through acting as a scatterer. This must be inspected as defects may cause printable defects. Initial mask inspection work has used SEM inspection to find these defects. However, we have historically used optical mask inspection tools, utilising wavelengths at or above what we are using for imaging, to qualify masks. This technology has been increasingly difficult to sustain as we have moved from imaging using mercury lamp based sources to pulsed excimer laser based sources that are not very suited to the inspection imaging. Indeed, review of defects found has moved from optical microscopes to SEM based tools. Inspection tools have also evolved, with the first SEM based mask inspection tools being developed to find the smallest defects, however these have the penalty of very low throughput. We will show the potential of using optical systems for the transmissive inspection of these EPL masks. The high potential of existing tools will be shown together with the need for a next generation of inspection tools. We will show that simulations indicate that an inspection source with 193nm wavelength would be required for the detection of 50nm defects on a mask used to print 70nm dense lines. It will also be shown how the position of the defect within the membrane greatly influences detection as well as the implications of moving to a thinner silicon membrane.

  12. Plasmonic films based on colloidal lithography.

    PubMed

    Ai, Bin; Yu, Ye; Möhwald, Helmuth; Zhang, Gang; Yang, Bai

    2014-04-01

    This paper reviews recent advances in the field of plasmonic films fabricated by colloidal lithography. Compared with conventional lithography techniques such as electron beam lithography and focused ion beam lithography, the unconventional colloidal lithography technique with advantages of low-cost and high-throughput has made the fabrication process more efficient, and moreover brought out novel films that show remarkable surface plasmon features. These plasmonic films include those with nanohole arrays, nanovoid arrays and nanoshell arrays with precisely controlled shapes, sizes, and spacing. Based on these novel nanostructures, optical and sensing performances can be greatly enhanced. The introduction of colloidal lithography provides not only efficient fabrication processes but also plasmonic films with unique nanostructures, which are difficult to be fabricated by conventional lithography techniques.

  13. Growth of magnetic cobalt/chromium nano-arrays by atom-optical lithography

    NASA Astrophysics Data System (ADS)

    Atoneche, F.; Malik, D.; Kirilyuk, A.; Toonen, A. J.; van Etteger, A. F.; Rasing, Th

    2011-07-01

    Arrays of magnetic cobalt/chromium (Co-Cr) nanolines are grown by depositing an atomic beam of Co-Cr alloy through a laser standing wave (SW) at λ/2 = 212.8 nm onto a substrate. During deposition, only the chromium atoms are resonantly affected by the optical potential created by the SW, causing a periodic modulation of the chromium concentration and consequently of the magnetic properties. Magnetic force microscopy and magneto-optical Kerr effect studies reveal a patterned magnetic structure on the substrate surface.

  14. Hybrid approach to optical CD metrology of directed self-assembly lithography

    NASA Astrophysics Data System (ADS)

    Godny, Stephane; Asano, Masafumi; Kawamoto, Akiko; Wakamoto, Koichi; Matsuki, Kazuto; Bozdog, Cornel; Sendelbach, Matthew; Turovets, Igor; Urenski, Ronen; Milo, Renan

    2013-04-01

    Directed Self Assembly (DSA) for contact layers is a challenging process in need of reliable metrology for tight process control. Key parameters of interest are guide CD, polymer CD, and residual polymer thickness at the bottom of the guide cavity. We show that Optical CD (OCD) provides the needed performance for DSA contact metrology. The measurement, done with a multi-channel spectroscopic reflectometry (SR) system, is enhanced through elements of a Holistic Metrology approach such as Injection and Hybrid Metrology.

  15. The Photodissociation of Nitromethane at 193 nm.

    DTIC Science & Technology

    1983-02-28

    gas fill; the focus and alignment were kept constant. The dissociation products were detected in the plane of the laser and molecular beams by a...This background is presumably due to scattereo light from the intense laser dissociating or desorbing diffusion pump oil from the wall behind the...When dissociated , other nitroalkanes exhibit the same emission spectrum as CH3NO2, suggesting little transfer of energy from the excited NO2 group to

  16. Nanoimprint lithography for nanodevice fabrication

    NASA Astrophysics Data System (ADS)

    Barcelo, Steven; Li, Zhiyong

    2016-09-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  17. Nanoimprint lithography for nanodevice fabrication.

    PubMed

    Barcelo, Steven; Li, Zhiyong

    2016-01-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  18. Fabrication error analysis for diffractive optical elements used in a lithography illumination system

    NASA Astrophysics Data System (ADS)

    Wang, Jian; Zhang, Fang; Song, Qiang; Zeng, Aijun; Zhu, Jing; Huang, Huijie

    2015-04-01

    With the constant shrinking of printable critical dimensions in photolithography, off-axis illumination (OAI) becomes one of the effective resolution-enhancement methods facing these challenges. This, in turn, is driving much more strict requirements, such as higher diffractive efficiency of the diffractive optical elements (DOEs) used in the OAI system. Since the design algorithms to optimize DOEs' phase profile are improved, the fabrication process becomes the main limiting factor leading to energy loss. Tolerance analysis is the general method to evaluate the fabrication accuracy requirement, which is especially useful for highly specialized deep UV applications with small structures and tight tolerances. A subpixel DOE simulation model is applied for tolerance analysis of DOEs by converting the abstractive fabrication structure errors into quantifiable subpixel phase matrices. Adopting the proposed model, four kinds of fabrication errors including misetch, misalignment, feature size error, and feature rounding error are able to be investigated. In the simulation experiments, systematic fabrication error studies of five typical DOEs used in 90-nm scanning photolithography illumination system are carried out. These results are valuable in the range of high precision DOE design algorithm and fabrication process optimization.

  19. Selection of attenuated phase shift mask compatible contact hole resists for KrF optical lithography

    NASA Astrophysics Data System (ADS)

    Lu, Zhijian G.; Cui, Yuping; Thomas, Alan C.; Mansfield, Scott M.; Kunkel, Gerhard; Dobuzinsky, David; Zach, Franz X.; Liu, Daniel; Chen, K. Rex; Jordhamo, George M.; Gutmann, Alois; Farrell, Timothy R.

    1999-06-01

    Multiple contact hole resist samples from a variety of DUV resist suppliers, including both acetal and ESCAP chemistries are evaluated on an organic anti-reflective under layer (ARC) using an attenuated phase shift mask (APSM). One sample exhibited excellent surface inhibition and superior lithographic performance for patterning contact holes of 0.2 micrometers imaging size. For most of resists, the process windows are limited by unwanted sidelobe printing through focus. The sensitivity of sidelobe printing to focus can be attributed to lens aberrations. For the first time, we prose to use Depth-of-focus (DOF) loss PWLdof and Exposure latitude (EL) loss PWLel to characterize resists surface inhibition, as well discovered that DOF loss is a sensitive measure of surface inhibition. Similar lithographic performance is obtained from acetal and ESCAP based materials. The two ESCAP resists EB3 and EA2 have better oxide etch resistance than the acetal resist AC1. The top surface reticulation is observed on ESCAP resist EB3 and EA2 during the oxide etch, but not on the acetal resist AC1. 110 nm underexposed resolutions achieved with the resist EA4 at a mask size of 250 nm. Faster resists generally exhibit better resolution but have smaller process windows when side lobe printing is included as a criterion. Selection of a resist formulation for attenuated phase shift applications has to face a compromise between resolution, photospeed, process window and surface inhibition. Finally, ARC operational modes and optical properties had little effect on sidelobe printing, and optimization of PEB temperature is important in suppressing sidelobe printing.

  20. Controllable liquid colour-changing lenses with microfluidic channels for vision protection, camouflage and optical filtering based on soft lithography fabrication.

    PubMed

    Zhang, Min; Li, Songjing

    2016-01-01

    In this work, liquid colour-changing lenses for vision protection, camouflage and optical filtering are developed by circulating colour liquids through microfluidic channels on the lenses manually. Soft lithography technology is applied to fabricate the silicone liquid colour-changing layers with microfluidic channels on the lenses instead of mechanical machining. To increase the hardness and abrasion resistance of the silicone colour-changing layers on the lenses, proper fabrication parameters such as 6:1 (mass ration) mixing proportion and 100 °C curing temperature for 2 h are approved for better soft lithography process of the lenses. Meanwhile, a new surface treatment for the irreversible bonding of silicone colour-changing layer with optical resin (CR39) substrate lens by using 5 % (volume ratio) 3-Aminopropyltriethoxysilane solution is proposed. Vision protection, camouflage and optical filtering functions of the lenses are investigated with different designs of the channels and multi-layer structures. Each application can not only well achieve their functional demands, but also shows the advantages of functional flexibility, rapid prototyping and good controllability compared with traditional ways. Besides optometry, some other designs and applications of the lenses are proposed for potential utility in the future.

  1. How much further can lithography process windows be improved?

    NASA Astrophysics Data System (ADS)

    Hockey, Mary Ann; Lin, Qin; Calderas, Eric

    2012-03-01

    Utilizing thin photoresist layers for successful pattern transfer has gained acceptance as the lithography process of record, primarily due to the incorporation of silicon-containing hardmask (HM) layers for added etching resistance. Our work includes understanding the impact of HfO2 and ZrO2 nanocrystal additives incorporated into spin-on HM materials. The goal is to quantify both etch selectivity and the improvements in the lithography process windows with the addition of HfO2 nanocrystals into various types of polymers. Conventional 193-nm photoresists and spin-on carbon materials were selected as references for etch selectivity calculations. Results indicate there are process window advantages with improvements in the depth of focus (DOF) and overall pattern collapse margins. In addition, the ability to quantify line width roughness (LWR) as a function of resolution has been accomplished for these HM materials, and results show low levels of LWR are achievable. Overall lithography process margins are positive for DOF, exposure latitude (EL), LWR, and pattern collapse with the incorporation of HfO2-enhanced HM coatings for etch protection.

  2. New filter rating method in practice for sub-30-nm lithography process filter

    NASA Astrophysics Data System (ADS)

    Umeda, Toru; Mizuno, Takehito; Tsuzuki, Shuichi; Numaguchi, Toru

    2010-04-01

    A new method for rating retention in lithography process filters has been developed. The method employs a gold nanoparticle contaminant challenge, inductively coupled plasma mass spectrometry as a concentration detector, and dynamic light scattering as a particle size detector, all of which enable accurate, reliable filter retention rating below 30 nm. There is good agreement between results obtained with the new method and results obtained with a conventional polystyrene latex bead challenge. A filter that was rated at 10 nm using extrapolative methods was confirmed to be 10 nm using the new challenge test. Microbridge removal efficiency of polyethylene filters rated by the new method was studied in a 193 nm (dry) lithography process and the new method was verified. When applied to commercially available filters that are rated below 30 nm, the new method revealed significant differences in removal efficiency among similarly labeled filters.

  3. Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials

    NASA Astrophysics Data System (ADS)

    Kim, Sang Kyun; Cho, Hyeon Mo; Woo, Changsoo; Koh, Sang Ran; Kim, Mi-Young; Yoon, Hui Chan; Lee, Woojin; Shin, Seung-Wook; Kim, Jong-Seob; Chang, Tuwon

    2008-11-01

    In the current semiconductor industry, hardmasks have become essential for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and cost of ownership. As the design rule shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling of optical properties of Si-SOH is important in order to obtain low reflectivity in the exposure process. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography and immersion ArF lithography. In this paper, the technique for optimization of optical properties, especially n and k values, of Si-SOH is described. To control n and k values, several chromophores were screened and the ratio among them was optimized. Although the amount of chromophores increased and the silicon contents decreased, our etch resistance enhancement technique allowed Si-SOH to have sufficient etch resistance. Characterization of this Si-SOH and lithographic performance using these materials are described in detail.

  4. VUV lithography

    DOEpatents

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  5. VUV lithography

    DOEpatents

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  6. Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography.

    PubMed

    Chu, Cheng Hung; Shiue, Chiun Da; Cheng, Hsuen Wei; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

    2010-08-16

    Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a ZnS-SiO(2) dielectric layer, are investigated for the purpose of understanding the structural phase-transitions that occur under the influence of tightly-focused laser beams. Selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of phase transitions associated with laser-recorded marks in chalcogenide Ge(2)Sb(2)Te(5) thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography.

  7. Organic solvent-free sugar-based transparency nanopatterning material derived from biomass for eco-friendly optical biochips using green lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Oshima, Akihiro; Oyama, Tomoko G.; Ito, Kenta; Sugahara, Kigenn; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

    2014-05-01

    An organic solvent-free sugar-based transparency nanopatterning material which had specific desired properties such as nanostructures of subwavelength grating and moth-eye antireflection, acceptable thermal stability of 160 °C, and low imaginary refractive index of less than 0.005 at 350-800 nm was proposed using electron beam lithography. The organic solvent-free sugar-based transparency nanopatterning material is expected for non-petroleum resources, environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of tetramethylammonium hydroxide. 120 nm moth-eye antireflection nanopatterns images with exposure dose of 10 μC/cm2 were provided by specific process conditions of electron beam lithography. The developed sugar derivatives with hydroxyl groups and EB sensitive groups in the organic solvent-free sugar-based transparency nanopatterning material were applicable to future development of optical interface films of biology and electronics as a novel chemical design.

  8. A study of high peroxynitrite generated in purge head outlet of charger with continuous supply of superior purification CDA system for 193 nm ArF reticle haze prevention

    NASA Astrophysics Data System (ADS)

    Chu, Fu-Sheng; Chiou, Shean-Hwan

    2008-05-01

    In this study, A phenomenon of high peroxynitrite generated in purge gas in purge head outlet of RSP SMIF-POD Charger was found. A superior purification CDA("CDA" is abbreviated from Clean Dry Air) continuous purge system has been used in 193nm ArF reticle chemical free preservation process for mask Haze control. Ion Chromatography(IC) and Gas Chromatography Mass Spectrometry(thermal desorber GC-MS) methods are used to analyze and verify inorganic ion and volatility organic compound cleanliness of purge gas, respectively. After IC analysis, high nitrate ion concentration was detected in UPW("UPW" is abbreviated from Ultra-Purification Water). As a result of this study, It is confident of presuming that high peroxynitrite contamination in purge gas in purge head outlet was caused by the blow type in-line gas ionizer, high potential(approximate 2KV) needle discharge influence on the inside of purge piping of Charger. After bypass in-line gas ionizer apparatus, the IC analysis result has a tendency towards a diminution in peroxynitrite that nitrate ion was not detected in UPW at all. At the same operation condition, if purge gas replace by superior purification AN2(A Class Nitrogen) and the inference conjectured that high ammonium ion response in UPW would take place. According to our study, superior purification CDA passed through the emitter tip of blow type in-line gas ionizers and under high potential needle discharge influence, high peroxynitrite concentration was generated in purge gas in purge head outlet of Charger. Due to the generation of peroxynitrite ion contamination in purge gas, it was not suitable to apply in the prevention of ESD damage of mask pattern in superior purification CDA(Clean Dry Air) continuous purge system. In this study, we also unexpectedly find that the blow type in-line gas ionizer with thermoplastic conductive tube resulted in purge gas a large number of volatility organic compounds(VOCs) contamination. VOC outgassing was generated

  9. X-ray diffraction imaging of metal-oxide epitaxial tunnel junctions made by optical lithography: use of focused and unfocused X-ray beams.

    PubMed

    Mocuta, Cristian; Barbier, Antoine; Stanescu, Stefan; Matzen, Sylvia; Moussy, Jean Baptiste; Ziegler, Eric

    2013-03-01

    X-ray diffraction techniques are used in imaging mode in order to characterize micrometre-sized objects. The samples used as models are metal-oxide tunnel junctions made by optical lithography, with lateral sizes ranging from 150 µm down to 10 µm and various shapes: discs, squares and rectangles. Two approaches are described and compared, both using diffraction contrast: full-field imaging (topography) and raster imaging (scanning probe) using a micrometre-sized focused X-ray beam. It is shown that the full-field image gives access to macroscopic distortions (e.g. sample bending), while the local distortions, at the micrometre scale (e.g. tilts of the crystalline planes in the vicinity of the junction edges), can be accurately characterized only using focused X-ray beams. These local defects are dependent on the junction shape and larger by one order of magnitude than the macroscopic curvature of the sample.

  10. X-ray diffraction imaging of metal–oxide epitaxial tunnel junctions made by optical lithography: use of focused and unfocused X-ray beams

    PubMed Central

    Mocuta, Cristian; Barbier, Antoine; Stanescu, Stefan; Matzen, Sylvia; Moussy, Jean-Baptiste; Ziegler, Eric

    2013-01-01

    X-ray diffraction techniques are used in imaging mode in order to characterize micrometre-sized objects. The samples used as models are metal–oxide tunnel junctions made by optical lithography, with lateral sizes ranging from 150 µm down to 10 µm and various shapes: discs, squares and rectangles. Two approaches are described and compared, both using diffraction contrast: full-field imaging (topography) and raster imaging (scanning probe) using a micrometre-sized focused X-ray beam. It is shown that the full-field image gives access to macroscopic distortions (e.g. sample bending), while the local distortions, at the micrometre scale (e.g. tilts of the crystalline planes in the vicinity of the junction edges), can be accurately characterized only using focused X-ray beams. These local defects are dependent on the junction shape and larger by one order of magnitude than the macroscopic curvature of the sample. PMID:23412494

  11. Polymeric waveguide Bragg grating filter using soft lithography

    NASA Astrophysics Data System (ADS)

    Kocabas, Askin; Aydinli, Atilla

    2006-10-01

    We use the soft lithography technique to fabricate a polymeric waveguide Bragg grating filter. Master grating structure is patterned by e-beam lithography. Using an elastomeric stamp and capillary action, uniform grating structures with very thin residual layers are transferred to the UV curable polymer without the use of an imprint machine. The waveguide layer based on BCB optical polymer is fabricated by conventional optical lithography. This approach provides processing simplicity to fabricate Bragg grating filters.

  12. Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography

    NASA Astrophysics Data System (ADS)

    Kim, Sang Kyun; Cho, Hyeon Mo; Koh, Sang Ran; Kim, Mi-young; Yoon, Hui Chan; Chung, Yong-jin; Kim, Jong Seob; Chang, Tuwon

    2008-03-01

    In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.

  13. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  14. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, Natale M.; Markle, David A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  15. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  16. Bubble-Pen Lithography.

    PubMed

    Lin, Linhan; Peng, Xiaolei; Mao, Zhangming; Li, Wei; Yogeesh, Maruthi N; Rajeeva, Bharath Bangalore; Perillo, Evan P; Dunn, Andrew K; Akinwande, Deji; Zheng, Yuebing

    2016-01-13

    Current lithography techniques, which employ photon, electron, or ion beams to induce chemical or physical reactions for micro/nano-fabrication, have remained challenging in patterning chemically synthesized colloidal particles, which are emerging as building blocks for functional devices. Herein, we develop a new technique - bubble-pen lithography (BPL) - to pattern colloidal particles on substrates using optically controlled microbubbles. Briefly, a single laser beam generates a microbubble at the interface of colloidal suspension and a plasmonic substrate via plasmon-enhanced photothermal effects. The microbubble captures and immobilizes the colloidal particles on the substrate through coordinated actions of Marangoni convection, surface tension, gas pressure, and substrate adhesion. Through directing the laser beam to move the microbubble, we create arbitrary single-particle patterns and particle assemblies with different resolutions and architectures. Furthermore, we have applied BPL to pattern CdSe/ZnS quantum dots on plasmonic substrates and polystyrene (PS) microparticles on two-dimensional (2D) atomic-layer materials. With the low-power operation, arbitrary patterning and applicability to general colloidal particles, BPL will find a wide range of applications in microelectronics, nanophotonics, and nanomedicine.

  17. Particle Lithography Enables Fabrication of Multicomponent Nanostructures

    PubMed Central

    Lin, Wei-feng; Swartz, Logan A.; Li, Jie-Ren; Liu, Yang; Liu, Gang-yu

    2014-01-01

    Multicomponent nanostructures with individual geometries have attracted much attention because of their potential to carry out multiple functions synergistically. The current work reports a simple method using particle lithography to fabricate multicomponent nanostructures of metals, proteins, and organosiloxane molecules, each with its own geometry. Particle lithography is well-known for its capability to produce arrays of triangular-shaped nanostructures with novel optical properties. This paper extends the capability of particle lithography by combining a particle template in conjunction with surface chemistry to produce multicomponent nanostructures. The advantages and limitations of this approach will also be addressed. PMID:24707328

  18. Secrets of subwavelength imaging and lithography

    NASA Astrophysics Data System (ADS)

    Hemmer, Philip R.

    2011-08-01

    To understand the limits and tradeoffs of nearly all existing subwavelength imaging techniques it sufficient to understand magnetic resonance imaging (MRI) and its generalizations. In many cases, subwavelength optical lithography can be viewed as the inverse problem to imaging and so the same principles apply. A simple review of MRI is given which shows how the most popular subwavelength imaging and lithography techniques naturally arise as special cases.

  19. Laser Scanning Holographic Lithography for Flexible 3D Fabrication of Multi-Scale Integrated Nano-structures and Optical Biosensors.

    PubMed

    Yuan, Liang Leon; Herman, Peter R

    2016-02-29

    Three-dimensional (3D) periodic nanostructures underpin a promising research direction on the frontiers of nanoscience and technology to generate advanced materials for exploiting novel photonic crystal (PC) and nanofluidic functionalities. However, formation of uniform and defect-free 3D periodic structures over large areas that can further integrate into multifunctional devices has remained a major challenge. Here, we introduce a laser scanning holographic method for 3D exposure in thick photoresist that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form uniform 3D nanostructure with beam size scaled to small 200 μm diameter. In this way, laser scanning is presented as a facile means to embed 3D PC structure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems.

  20. Laser Scanning Holographic Lithography for Flexible 3D Fabrication of Multi-Scale Integrated Nano-structures and Optical Biosensors

    NASA Astrophysics Data System (ADS)

    Yuan, Liang (Leon); Herman, Peter R.

    2016-02-01

    Three-dimensional (3D) periodic nanostructures underpin a promising research direction on the frontiers of nanoscience and technology to generate advanced materials for exploiting novel photonic crystal (PC) and nanofluidic functionalities. However, formation of uniform and defect-free 3D periodic structures over large areas that can further integrate into multifunctional devices has remained a major challenge. Here, we introduce a laser scanning holographic method for 3D exposure in thick photoresist that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form uniform 3D nanostructure with beam size scaled to small 200 μm diameter. In this way, laser scanning is presented as a facile means to embed 3D PC structure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems.

  1. Laser Scanning Holographic Lithography for Flexible 3D Fabrication of Multi-Scale Integrated Nano-structures and Optical Biosensors

    PubMed Central

    Yuan, Liang (Leon); Herman, Peter R.

    2016-01-01

    Three-dimensional (3D) periodic nanostructures underpin a promising research direction on the frontiers of nanoscience and technology to generate advanced materials for exploiting novel photonic crystal (PC) and nanofluidic functionalities. However, formation of uniform and defect-free 3D periodic structures over large areas that can further integrate into multifunctional devices has remained a major challenge. Here, we introduce a laser scanning holographic method for 3D exposure in thick photoresist that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form uniform 3D nanostructure with beam size scaled to small 200 μm diameter. In this way, laser scanning is presented as a facile means to embed 3D PC structure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems. PMID:26922872

  2. Top-surface imaging resists for lithography with strongly attenuated radiation

    SciTech Connect

    Ray-Chaudhuri, A.; Kubiak, G.; Henderson, C.; Wheeler, D.; Pollagi, T.

    1997-09-01

    Strong resist photoabsorption at wavelengths below 248 nm necessitates the use of a thin layer imaging (TLI) scheme for microlithography using 193 nm, 157 nm, or 13.4 nm radiation. Previous to this work, a TLI process commonly known as silylated top surface imaging (TSI) was developed by a Sandia/AT and T team for use in extreme ultraviolet lithography (EUVL) at 13.4 nm. Using this bilayer process, 0.13 {micro}m resolution with 87{degree} sidewalls in 0.7 {micro}m of resist was achieved for EUV exposures. New imaging layer polymers, silylation reagents and crosslinkers, and process conditions were screened for improvement in this TSI process with the ultimate goal of demonstrating a resist technology capable of 0.10 {micro}m critical dimension (CD). The results of these attempted improvements to the TSI process are described in this report.

  3. EUV Lithography: New Metrology Challenges

    SciTech Connect

    Wood, Obert

    2007-09-26

    Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 22 nm half-pitch device node and beyond. Because its imaging wavelength is approximately twenty times shorter than those currently in use (13.5 nm versus 193-248 nm) and because EUV optics and masks must be provided with highly-precise reflective multilayer coatings, EUV lithography presents a number of new and difficult metrology challenges. In this paper, the current status of the metrology tools being used to characterize the figure and finish of EUV mirror surfaces, the defectivity and flatness of EUV mask blanks and the outgassing rates of EUV resist materials are discussed.

  4. Fabrication of nanostructured transmissive optical devices on ITO-glass with UV1116 photoresist using high-energy electron beam lithography

    NASA Astrophysics Data System (ADS)

    Williams, Calum; Bartholomew, Richard; Rughoobur, Girish; Gordon, George S. D.; Flewitt, Andrew J.; Wilkinson, Timothy D.

    2016-12-01

    High-energy electron beam lithography for patterning nanostructures on insulating substrates can be challenging. For high resolution, conventional resists require large exposure doses and for reasonable throughput, using typical beam currents leads to charge dissipation problems. Here, we use UV1116 photoresist (Dow Chemical Company), designed for photolithographic technologies, with a relatively low area dose at a standard operating current (80 kV, 40-50 μC cm-2, 1 nAs-1) to pattern over large areas on commercially coated ITO-glass cover slips. The minimum linewidth fabricated was ˜33 nm with 80 nm spacing; for isolated structures, ˜45 nm structural width with 50 nm separation. Due to the low beam dose, and nA current, throughput is high. This work highlights the use of UV1116 photoresist as an alternative to conventional e-beam resists on insulating substrates. To evaluate suitability, we fabricate a range of transmissive optical devices, that could find application for customized wire-grid polarisers and spectral filters for imaging, which operate based on the excitation of surface plasmon polaritons in nanosized geometries, with arrays encompassing areas ˜0.25 cm2.

  5. Fabrication of nanostructured transmissive optical devices on ITO-glass with UV1116 photoresist using high-energy electron beam lithography.

    PubMed

    Williams, Calum; Bartholomew, Richard; Rughoobur, Girish; Gordon, George S D; Flewitt, Andrew J; Wilkinson, Timothy D

    2016-12-02

    High-energy electron beam lithography for patterning nanostructures on insulating substrates can be challenging. For high resolution, conventional resists require large exposure doses and for reasonable throughput, using typical beam currents leads to charge dissipation problems. Here, we use UV1116 photoresist (Dow Chemical Company), designed for photolithographic technologies, with a relatively low area dose at a standard operating current (80 kV, 40-50 μC cm(-2), 1 nAs(-1)) to pattern over large areas on commercially coated ITO-glass cover slips. The minimum linewidth fabricated was ∼33 nm with 80 nm spacing; for isolated structures, ∼45 nm structural width with 50 nm separation. Due to the low beam dose, and nA current, throughput is high. This work highlights the use of UV1116 photoresist as an alternative to conventional e-beam resists on insulating substrates. To evaluate suitability, we fabricate a range of transmissive optical devices, that could find application for customized wire-grid polarisers and spectral filters for imaging, which operate based on the excitation of surface plasmon polaritons in nanosized geometries, with arrays encompassing areas ∼0.25 cm(2).

  6. Polarization manipulation in single refractive prism based holography lithography

    NASA Astrophysics Data System (ADS)

    Xiong, Wenjie; Xu, Yi; Xiao, Yujian; Lv, Xiaoxu; Wu, Lijun

    2015-01-01

    We propose theoretically and demonstrate experimentally a simple but effective strategy for polarization manipulation in single refractive prism based holographic lithography. By tuning the polarization of a single laser beam, we can obtain the pill shape interference pattern with a high-contrast where a complex optical setup and multiple polarizers are needed in the conventional holography lithography. Fabrication of pill shape two-dimensional polymer photonic crystals using one beam and one shoot holography lithography is shown as an example to support our theoretical results. This integrated polarization manipulation technique can release the crucial stability restrictions imposed on the multiple beams holography lithography.

  7. Patterning via optical saturable transitions

    NASA Astrophysics Data System (ADS)

    Cantu, Precious

    For the past 40 years, optical lithography has been the patterning workhorse for the semiconductor industry. However, as integrated circuits have become more and more complex, and as device geometries shrink, more innovative methods are required to meet these needs. In the far-field, the smallest feature that can be generated with light is limited to approximately half the wavelength. This, so called far-field diffraction limit or the Abbe limit (after Prof. Ernst Abbe who first recognized this), effectively prevents the use of long-wavelength photons >300nm from patterning nanostructures <100nm. Even with a 193nm laser source and extremely complicated processing, patterns below ˜20nm are incredibly challenging to create. Sources with even shorter wavelengths can potentially be used. However, these tend be much more expensive and of much lower brightness, which in turn limits their patterning speed. Multi-photon reactions have been proposed to overcome the diffraction limit. However, these require very large intensities for modest gain in resolution. Moreover, the large intensities make it difficult to parallelize, thus limiting the patterning speed. In this dissertation, a novel nanopatterning technique using wavelength-selective small molecules that undergo single-photon reactions, enabling rapid top-down nanopatterning over large areas at low-light intensities, thereby allowing for the circumvention of the far-field diffraction barrier is developed and experimentally verified. This approach, which I refer to as Patterning via Optical Saturable Transitions (POST) has the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is currently possible with conventional optical lithographic techniques. The fundamental understanding of this technique goes beyond optical lithography in the semiconductor industry and is applicable to any area that requires the rapid patterning of large-area two or three

  8. Label-free optical detection of C-reactive protein by nanoimprint lithography-based 2D-photonic crystal film.

    PubMed

    Endo, Tatsuro; Kajita, Hiroshi; Kawaguchi, Yukio; Kosaka, Terumasa; Himi, Toshiyuki

    2016-06-01

    The development of high-sensitive, and cost-effective novel biosensors have been strongly desired for future medical diagnostics. To develop novel biosensor, the authors focused on the specific optical characteristics of photonic crystal. In this study, a label-free optical biosensor, polymer-based two-dimensional photonic crystal (2D-PhC) film fabricated using nanoimprint lithography (NIL), was developed for detection of C-reactive protein (CRP) in human serum. The nano-hole array constructed NIL-based 2D-PhC (hole diameter: 230 nm, distance: 230, depth: 200 nm) was fabricated on a cyclo-olefin polymer (COP) film (100 µm) using thermal NIL and required surface modifications to reduce nonspecific adsorption of target proteins. Antigen-antibody reactions on the NIL-based 2D-PhC caused changes to the surrounding refractive index, which was monitored as reflection spectrum changes in the visible region. By using surface modified 2D-PhC, the calculated detection limit for CRP was 12.24 pg/mL at an extremely short reaction time (5 min) without the need for additional labeling procedures and secondary antibody. Furthermore, using the dual-functional random copolymer, CRP could be detected in a pooled blood serum diluted 100× with dramatic reduction of nonspecific adsorption. From these results, the NIL-based 2D-PhC film has great potential for development of an on-site, high-sensitivity, cost-effective, label-free biosensor for medical diagnostics applications.

  9. Nanoimprint lithography for microfluidics manufacturing

    NASA Astrophysics Data System (ADS)

    Kreindl, Gerald; Matthias, Thorsten

    2013-12-01

    The history of imprint technology as lithography method for pattern replication can be traced back to 1970's but the most significant progress has been made by the research group of S. Chou in the 1990's. Since then, it has become a popular technique with a rapidly growing interest from both research and industrial sides and a variety of new approaches have been proposed along the mainstream scientific advances. Nanoimprint lithography (NIL) is a novel method for the fabrication of micro/nanometer scale patterns with low cost, high throughput and high resolution. Unlike traditional optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional lithographic techniques. The ability to fabricate structures from the micro- to the nanoscale with high precision in a wide variety of materials is of crucial importance to the advancement of micro- and nanotechnology and the biotech- sciences as a whole and will be discussed in this paper. Nanoimprinting can not only create resist patterns, as in lithography, but can also imprint functional device structures in various polymers, which can lead to a wide range of applications in electronics, photonics, data storage, and biotechnology.

  10. X ray lithography in Japan

    NASA Astrophysics Data System (ADS)

    Clemens, James T.; Hill, Robert W.; Cerrina, Franco; Fuller, Gene E.; Pease, R. F.

    1991-10-01

    Integrated circuits (semiconductors) are the key components of modern computers, communication systems, consumer electronics, and the new generations of smart machines and instruments. Japan's strong position and growing influence in the manufacture of semiconductors and systems based on them is well known and well documented. Microlithography is one the most critical elements of the semiconductor manufacturing process because it determines the minimum feature size and the functional capabilities of the semiconductor. Because it is used many times in the manufacturing sequence, the quality of the microlithography process (i.e., number of defects, control for feature size, etc.) is critical in determining the yield and cost of semiconductors and hence the competitiveness of the electronics industry. At present all volume semiconductor manufacturing is done with optical UV (ultraviolet) projection lithography, twenty-year-old photographic technology which has been and is still evolving. There are many issues that limit the technical capability and cost-effectiveness of UV lithography, and thus, alternate lithographic techniques are continuously being researched and developed. X-ray lithography, which was invented in the early 1970's, holds the promise of providing higher yields in manufacturing semiconductors by virtue of enhanced process latitude, process robustness, and resolution.

  11. Fabrication of dual-wavelength diffractive beam splitters using maskless optical lithography with a digital micromirror device

    NASA Astrophysics Data System (ADS)

    Amako, Jun; Yu, Shinozaki

    2016-03-01

    In this paper, we demonstrate a dual-wavelength diffractive beam splitter to be used in parallel laser processing. The novel optical element, which is formed in a transparent material, generates two beam arrays at different wavelengths and allows their overlap at the process points on a workpiece. Since the splitter has a stochastically designed, complex, and deep surface profile, there is limited freedom in selecting a fabrication method. We designed the splitter using a simulated annealing algorithm and fabricated it in a photoresist through maskless exposure by using a digital micromirror device. We characterized the designed splitter, thereby corroborating the proposed beam-splitting concept.

  12. Controlled Scanning Probe Lithography

    NASA Astrophysics Data System (ADS)

    Ruskell, Todd G.; Sarid, Dror; Workman, Richard K.; Pyle, Jason L.

    1997-03-01

    A method for real-time monitoring of the quality and quantity of silicon oxide grown on silicon using conducting-tip scanning probe lithography has been developed. The sub-picoampere tip-sample currents measured during lithography in ambient conditions are shown to be proportional to the amount of silicon oxide being grown. In addition, we have demonstrated the ability to control the composition of the grown material by altering the lithographic environment. Silicon nitride growth is shown to result from lithography on silicon samples in an environment of annhydrous ammonia.

  13. Readability dependence on lithography conditions for printing code marks using a squared optical fiber matrix and light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Watanabe, Jun; Kato, Kazuhide; Iwasaki, Jun-ya; Horiuchi, Toshiyuki

    2015-06-01

    The direct readability of code marks printed using a new exposure system was investigated. In the new exposure system, code-mark patterns were printed using LEDs as exposure sources and squared optical-fiber ends as code-mark elements. A 10 × 10 fiber matrix was fabricated, and light emitted from each LED was led to each fiber. Because gaps appeared between the code-mark cells, a long exposure time was adopted, and the gaps between cells were eliminated by giving an overdose of light. After code-mark patterns were stably printed, their readability was investigated using a commercial code-mark reader. It was found that all the printed code marks were readable without errors. In concrete, same 100 identical marks printed on a wafer were readable. Moreover, six kinds of marks were repeatedly detected more than 100 times with no reading errors.

  14. Force-controlled inorganic crystallization lithography.

    PubMed

    Cheng, Chao-Min; LeDuc, Philip R

    2006-09-20

    Lithography plays a key role in integrated circuits, optics, information technology, biomedical applications, catalysis, and separation technologies. However, inorganic lithography techniques remain of limited utility for applications outside of the typical foci of integrated circuit manufacturing. In this communication, we have developed a novel stamping method that applies pressure on the upper surface of the stamp to regulate the dewetting process of the inorganic buffer and the evaporation rate of the solvent in this buffer between the substrate and the surface of the stamp. We focused on generating inorganic microstructures with specific locations and also on enabling the ability to pattern gradients during the crystallization of the inorganic salts. This approach utilized a combination of lithography with bottom-up growth and assembly of inorganic crystals. This work has potential applications in a variety of fields, including studying inorganic material patterning and small-scale fabrication technology.

  15. Lithography aware overlay metrology target design method

    NASA Astrophysics Data System (ADS)

    Lee, Myungjun; Smith, Mark D.; Lee, Joonseuk; Jung, Mirim; Lee, Honggoo; Kim, Youngsik; Han, Sangjun; Adel, Michael E.; Lee, Kangsan; Lee, Dohwa; Choi, Dongsub; Liu, Zephyr; Itzkovich, Tal; Levinski, Vladimir; Levy, Ady

    2016-03-01

    We present a metrology target design (MTD) framework based on co-optimizing lithography and metrology performance. The overlay metrology performance is strongly related to the target design and optimizing the target under different process variations in a high NA optical lithography tool and measurement conditions in a metrology tool becomes critical for sub-20nm nodes. The lithography performance can be quantified by device matching and printability metrics, while accuracy and precision metrics are used to quantify the metrology performance. Based on using these metrics, we demonstrate how the optimized target can improve target printability while maintaining the good metrology performance for rotated dipole illumination used for printing a sub-100nm diagonal feature in a memory active layer. The remaining challenges and the existing tradeoff between metrology and lithography performance are explored with the metrology target designer's perspective. The proposed target design framework is completely general and can be used to optimize targets for different lithography conditions. The results from our analysis are both physically sensible and in good agreement with experimental results.

  16. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O2+, BF2+, P+ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF2+, over 90% of O2+ and P+ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He+ beam is as high as 440 A/cm2 • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O2+ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O2+ ions with the dose of 1015 cm-2. The oxide can then serve as a hard mask for patterning of the Si film. The

  17. Photoinhibition superresolution lithography

    NASA Astrophysics Data System (ADS)

    Forman, Darren Lawrence

    While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

  18. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.

    PubMed

    Ashby, Paul D; Olynick, Deirdre L; Ogletree, D Frank; Naulleau, Patrick P

    2015-10-14

    Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2 nm line-edge roughness, and 20 mJ cm(-2) exposure dose. Here, the current state of the development of EUV resist materials is reviewed. First, pattern formation in resist materials is described and the Hansen solubility sphere (HSS) is used as a framework for understanding the pattern-development process. Then, recent progress in EUVL resist chemistry and characterization is discussed. Incremental advances are obtained by transferring chemically amplified resist materials developed for 193 nm lithography to EUV wavelengths. Significant advances will result from synthesizing high-absorbance resist materials using heavier atoms. In the framework of the HSS model, these materials have significant room for improvement and thus offer great promise as high-performance EUV resists for patterning of sub-10 nm features.

  19. Deep-UV microsphere projection lithography.

    PubMed

    Bonakdar, Alireza; Rezaei, Mohsen; Brown, Robert L; Fathipour, Vala; Dexheimer, Eric; Jang, Sung Jun; Mohseni, Hooman

    2015-06-01

    In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.

  20. Three-Dimensional Nano-Lithography for Emerging Technologies

    DTIC Science & Technology

    2005-09-27

    SUBJECT TERMS Grayscale lithography, micro - and nano -fabrication, 3D micro ...meso-optics for optical system integration, and the burgeoning field of micro -electro-mechanical systems (MEMS), provide drive in the micro - and nano ...scientific literature, and presentations at conferences devoted to micro - and nano -fabrication and micro - optics. More importantly, we developed technology

  1. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  2. Fabrication of metallic nanowires and nanoribbons using laser interference lithography and shadow lithography

    SciTech Connect

    Park, Joong- Mok; Nalwa, Kanwar Singh; Leung, Wai; Constant, Kristen; Chaudhary, Sumit; Ho, Kai-Ming

    2010-04-30

    Ordered and free-standing metallic nanowires were fabricated by e-beam deposition on patterned polymer templates made by interference lithography. The dimensions of the nanowires can be controlled through adjustment of deposition conditions and polymer templates. Grain size, polarized optical transmission and electrical resistivity were measured with ordered and free-standing nanowires.

  3. Evolution in the concentration of activities in lithography

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    2016-03-01

    From a perusal of the proceedings of the SPIE Advanced Lithography Symposium, the progression of new concepts in lithographic technology can be seen. A new idea first appears in a few papers, and over time, there is an increase in the number of papers on the same topic. Eventually the method becomes commonplace, and the number of papers on the topic declines, as the idea becomes part of our industry's working knowledge. For example, one or two papers on resolution enhancement techniques (RETs) appeared in the proceedings of the Optical Microlithography Conference in 1989 and 1990. By 1994, the total number of papers had increased to 35. Early lithographers focused on practical issues, such as adhesion promotion and resist edge bead. The introduction of simulation software brought on the next era of lithography. This was followed by a period of time in which RETs were developed and brought to maturity. The introduction of optical proximity corrections (OPC) initiated the next major era of lithography. The traditional path for scaling by using shorter wavelengths, decreasing k1 and increasing numerical aperture has given way to the current era of optical multiple patterning and lithography-design co-optimization. There has been sufficient activity in EUV lithography R and D to justify a separate EUV Lithography Conference as part of the annual Advanced Lithography Symposium. Each era builds on the cumulative knowledge gained previously. Over time, there have been parallel developments in optics, exposure tools, resist, metrology and mask technology, many of which were associated with changes in the wavelength of light used for leading-edge lithography.

  4. An ice lithography instrument.

    PubMed

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J A

    2011-06-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  5. An ice lithography instrument

    SciTech Connect

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-06-15

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  6. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  7. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  8. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  9. Photochemistry of cyano- and dicyanoacetylene at 193 nm

    SciTech Connect

    Halpern, J.B.; Petway, L.; Lu, R.; Jackson, W.M.; McCrary, V.R. ); Nottingham, W. )

    1990-03-08

    The far-UV photochemistry of cyano- and dicyanoacetylene has been studied. In particular, those photolysis channels have been characterized that lead to the production of excited-state fragments and CN in the ground electronic state. Following photolysis of HC{sub 3}N, in addition to direct production of CN and C{sub 2}H, there is a second dissociation channel leading to C{sub 3}N and H atoms. The results also show that at high laser intensity the HC{sub 3}N dissociates by two-photon photolysis and that the C{sub 3}N undergoes secondary photolysis. Photolysis of C{sub 4}NH{sub 2} produces CN and C{sub 3}N radicals.

  10. Mask requirements for advanced lithography

    NASA Astrophysics Data System (ADS)

    Trybula, Walter J.; Engelstad, Roxann L.

    1998-06-01

    Within the n ext 10 years, sub-100 nm features will be required for state-of-the-industry devices. The tolerances for errors at 100 nm or less are substantially smaller than can be achieved today. A critical element of the error budget is the mask. For the 100 nm generation, the 4x mask image placement requirement is 20 nm with CD requirements as low as 9 nm. The challenge would be significant if the only improvement were to develop superior optical masks. There are multiple advanced technologies that are vying to be the successor to optical lithography. Each of these has a unique mask requirement. The leading contenders for the next generation are 1x x-ray, projection e-beam, ion beam, EUV and cell projection e-beam. The x-ray design is a proximity system that employs a 1x membrane mask. Projection e-beam uses a membrane mask with stabilizing struts. Ion beam lithography employs a stencil membrane mask with a carbon coating. EUV employs a 13 nm radiation source that requires a reflective mask. Cell projection e-beam has 25x or greater image masks that are stitched on the wafer. All the technologies indicated above. Once a total error budget for the mask is known, it is necessary to divide the total into the constituent parts. The major sources of distortion can be categorized into eight areas: mask blank processing, e- beam writing, pattern transfer, pellicle effects, mounting, thermal loadings, dynamic effects during exposure and radiation damage. The distortions introduced by each of these depend upon the type of mask; so, individual mask calculations must be made. The purpose of this paper is to review the modeling requirements of each of the categories and to highlight some results from each of the mask configurations.

  11. High-contrast process using a positive-tone resist with antistatic coating and high-energy (100-keV) e-beam lithography for fabricating diffractive optical elements (DOE) on quartz

    NASA Astrophysics Data System (ADS)

    Poli, Louis C.; Kondek, Christine A.; Shoop, Barry L.; McLane, George F.

    1995-06-01

    Diffractive optical elements (DOE) are becoming important as optical signal processing elements in increasingly diverse applications. These elements, fabricated on quartz, may be used as phase shift type masks or as embedded components that implement a transfer function within a processing network. A process is under development for the fabrication of a DOE implementing a Jervis error diffusion kernel for research in half tone image processing. Dry etching is performed after lithography and pattern transfer through a nickel mask. This results in etched areal features on the substrate. An optical diffraction medium is thus created. Lithographic patterning is done by e-beam lithography (EBL) to realize small features, but also offers the important advantage of a large depth of field which relaxes the problem of complex surface topology. The recent availability of high energy (100 KeV) lithography tools provides a capability for precision overlay, small feature resolution, and enhanced image contrast through a lower induced proximity effect. Patterning by EBL on insulating substrates is complicated by the necessity of providing a vehicle for the avoidance of charge buildup on the surface. In a previously presented paper a methodology was shown for the use of TQV-501 (Nitto Chemical) antistatic compound as a final spin on film for use with PMMA and SAL-601 (Shipley). In this current work, a process is described using EBL and a high performance positive resist working with a final film layer of antistatic TQV-501 on a nickel coated wafer. The process may then be reapplied to realize additional lithographic levels in registration, for multilevel DOE components. High energy (100 KeV) EBL is used to provide high quality pattern definition. The e-beam sensitive resist, ZEP-320-37 (Nagase Chemical) in dilution, together with a top film layer of TQV-501 serves as a bilevel resist system and is used for patterning the desired image before definition of the nickel mask through

  12. Immersion lithography bevel solutions

    NASA Astrophysics Data System (ADS)

    Tedeschi, Len; Tamada, Osamu; Sanada, Masakazu; Yasuda, Shuichi; Asai, Masaya

    2008-03-01

    The introduction of Immersion lithography, combined with the desire to maximize the number of potential yielding devices per wafer, has brought wafer edge engineering to the forefront for advanced semiconductor manufactures. Bevel cleanliness, the position accuracy of the lithography films, and quality of the EBR cut has become more critical. In this paper, the effectiveness of wafer track based solutions to enable state-of-art bevel schemes is explored. This includes an integrated bevel cleaner and new bevel rinse nozzles. The bevel rinse nozzles are used in the coating process to ensure a precise, clean film edge on or near the bevel. The bevel cleaner is used immediately before the wafer is loaded into the scanner after the coating process. The bevel cleaner shows promise in driving down defectivity levels, specifically printing particles, while not damaging films on the bevel.

  13. Sub-10 nm patterning using EUV interference lithography.

    PubMed

    Päivänranta, Birgit; Langner, Andreas; Kirk, Eugenie; David, Christian; Ekinci, Yasin

    2011-09-16

    Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.

  14. Lithography alternatives meet design style reality: How do they "line" up?

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.

    2016-03-01

    Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to

  15. Microfluidic Applications of Soft Lithography

    SciTech Connect

    Rose, K A; Krulevitch, P; Hamilton, J

    2001-04-10

    The soft lithography fabrication technique was applied to three microfluidic devices. The method was used to create an original micropump design and retrofit to existing designs for a DNA manipulation device and a counter biological warfare sample preparation device. Each device presented unique and original challenges to the soft lithography application. AI1 design constraints of the retrofit devices were satisfied using PDMS devices created through variation of soft lithography methods. The micropump utilized the versatility of PDMS, creating design options not available with other materials. In all cases, the rapid processing of soft lithography reduced the fabrication time, creating faster turnaround for design modifications.

  16. A particle-in-cell plus Monte Carlo study of plasma-induced damage of normal incidence collector optics used in extreme ultraviolet lithography

    SciTech Connect

    Wieggers, R. C.; Goedheer, W. J.; Akdim, M. R.; Bijkerk, F.; Zegeling, P. A.

    2008-01-01

    We present a kinetic simulation of the plasma formed by photoionization in the intense flux of an extreme ultraviolet lithography (EUVL) light source. The model is based on the particle-in-cell plus Monte Carlo approach. The photoelectric effect and ionization by electron collisions are included. The time evolution of the low density argon plasma is simulated during and after the EUV pulse and the ion-induced sputtering of the coating material of a normal incidence collector mirror is computed. The relation between the time and position at which the ions are created and their final energy is studied, revealing how the evolution and the properties of the sheath influence the amount of sputtered material. The influence of the gas pressure and the source intensity is studied, evaluating the behavior of Ar{sup +} and Ar{sup 2+} ions. A way to reduce the damage to the collector mirror is presented.

  17. Array imaging system for lithography

    NASA Astrophysics Data System (ADS)

    Kirner, Raoul; Mueller, Kevin; Malaurie, Pauline; Vogler, Uwe; Noell, Wilfried; Scharf, Toralf; Voelkel, Reinhard

    2016-09-01

    We present an integrated array imaging system based on a stack of microlens arrays. The microlens arrays are manufactured by melting resist and reactive ion etching (RIE) technology on 8'' wafers (fused silica) and mounted by wafer-level packaging (WLP)1. The array imaging system is configured for 1X projection (magnification m = +1) of a mask pattern onto a planar wafer. The optical system is based on two symmetric telescopes, thus anti-symmetric wavefront aberrations like coma, distortion, lateral color are minimal. Spherical aberrations are reduced by using microlenses with aspherical lens profiles. In our system design approach, sub-images of individual imaging channels do not overlap to avoid interference. Image superposition is achieved by moving the array imaging system during the exposure time. A tandem Koehler integrator illumination system (MO Exposure Optics) is used for illumination. The angular spectrum of the illumination light underfills the pupils of the imaging channels to avoid crosstalk. We present and discuss results from simulation, mounting and testing of a first prototype of the investigated array imaging system for lithography.

  18. Evidence of CH{sub 2}O (a-tilde{sup 3}A{sub 2}) and C{sub 2}H{sub 4} (a-tilde{sup 3}B{sub 1u}) produced from photodissociation of 1,3-trimethylene oxide at 193 nm

    SciTech Connect

    Lee, S.-H.; Ong, C.-S.; Lee, Yuan T.

    2006-02-21

    We investigated the dissociative ionization of formaldehyde (CH{sub 2}O) and ethene (C{sub 2}H{sub 4}) produced from photolysis of 1,3-trimethylene oxide at 193 nm using a molecular-beam apparatus and vacuum-ultraviolet radiation from an undulator for direct ionization. The CH{sub 2}O (C{sub 2}H{sub 4}) product suffers from severe dissociative ionization to HCO{sup +} (C{sub 2}H{sub 3}{sup +} and C{sub 2}H{sub 2}{sup +}) even though photoionization energy is as small as 9.8 eV. Branching ratios of fragmentation of CH{sub 2}O and C{sub 2}H{sub 4} following ionization are revealed as a function of kinetic energy of products using ionizing photons from 9.8 to 14.8 eV. Except several exceptions, branching ratios of daughter ions increase with increasing photon energy but decrease with increasing kinetic energy. The title reaction produces CH{sub 2}O and C{sub 2}H{sub 4} mostly on electronic ground states but a few likely on triplet states; C{sub 2}H{sub 4} (a-tilde{sup 3}B{sub 1u}) seems to have a yield greater than CH{sub 2}O (a-tilde{sup 3}A{sub 2}). The distinct features observed at small kinetic energies of daughter ions are attributed to dissociative ionization of photoproducts CH{sub 2}O (a-tilde{sup 3}A{sub 2}) and C{sub 2}H{sub 4} (a-tilde{sup 3}B{sub 1u}). The observation of triplet products indicates that intersystem crossing occurs prior to fragmentation of 1,3-trimethylene oxide.

  19. Lithography, metrology and nanomanufacturing

    NASA Astrophysics Data System (ADS)

    Liddle, J. Alexander; Gallatin, Gregg M.

    2011-07-01

    Semiconductor chip manufacturing is by far the predominant nanomanufacturing technology in the world today. Top-down lithography techniques are used for fabrication of logic and memory chips since, in order to function, these chips must essentially be perfect. Assuring perfection requires expensive metrology. Top of the line logic sells for several hundred thousand dollars per square metre and, even though the required metrology is expensive, it is a small percentage of the overall manufacturing cost. The level of stability and control afforded by current lithography tools means that much of this metrology can be online and statistical. In contrast, many of the novel types of nanomanufacturing currently being developed will produce products worth only a few dollars per square metre. To be cost effective, the required metrology must cost proportionately less. Fortunately many of these nanofabrication techniques, such as block copolymer self-assembly, colloidal self-assembly, DNA origami, roll-2-roll nano-imprint, etc., will not require the same level of perfection to meet specification. Given the variability of these self-assembly processes, in order to maintain process control, these techniques will require some level of real time online metrology. Hence we are led to the conclusion that future nanomanufacturing may well necessitate ``cheap'' nanometre scale metrology which functions real time and on-line, e.g. at GHz rates, in the production stream. In this paper we review top-down and bottom-up nanofabrication techniques and compare and contrast the various metrology requirements.

  20. Lithography, metrology and nanomanufacturing.

    PubMed

    Liddle, J Alexander; Gallatin, Gregg M

    2011-07-01

    Semiconductor chip manufacturing is by far the predominant nanomanufacturing technology in the world today. Top-down lithography techniques are used for fabrication of logic and memory chips since, in order to function, these chips must essentially be perfect. Assuring perfection requires expensive metrology. Top of the line logic sells for several hundred thousand dollars per square metre and, even though the required metrology is expensive, it is a small percentage of the overall manufacturing cost. The level of stability and control afforded by current lithography tools means that much of this metrology can be online and statistical. In contrast, many of the novel types of nanomanufacturing currently being developed will produce products worth only a few dollars per square metre. To be cost effective, the required metrology must cost proportionately less. Fortunately many of these nanofabrication techniques, such as block copolymer self-assembly, colloidal self-assembly, DNA origami, roll-2-roll nano-imprint, etc., will not require the same level of perfection to meet specification. Given the variability of these self-assembly processes, in order to maintain process control, these techniques will require some level of real time online metrology. Hence we are led to the conclusion that future nanomanufacturing may well necessitate "cheap" nanometre scale metrology which functions real time and on-line, e.g. at GHz rates, in the production stream. In this paper we review top-down and bottom-up nanofabrication techniques and compare and contrast the various metrology requirements.

  1. Understanding the photoresist surface-liquid interface for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Conley, Will; LeSuer, Robert J.; Fan, Frank F.; Bard, Allen J.; Taylor, Chris; Tsiartas, Pavlos; Willson, Grant; Romano, Andrew; Dammel, Ralph

    2005-05-01

    Extraction of small molecule components into water from photoresist materials designed for 193 nm immersion lithography has been observed. Leaching of photoacid generator (PAG) has been monitored using three techniques: liquid scintillation counting (LSC); liquid chromatography mass spectrometry (LCMS); and scanning electrochemical microscopy (SECM). LSC was also used to detect leaching of residual casting solvent (RCS) and base. The amount of PAG leaching from the resist films, 30 - 50 ng/cm2, was quantified using LSC. Both LSC and LCMS results suggest that PAG and photoacid leach from the film only upon initial contact with water (within 10 seconds) and minimal leaching occurs thereafter for immersion times up to 30 minutes. Exposed films show an increase in the amount of photoacid anion leaching by upwards of 20% relative to unexposed films. Films pre-rinsed with water for 30 seconds showed no further PAG leaching as determined by LSC. No statistically significant amount of residual casting solvent was extracted after 30 minutes of immersion. Base extraction was quantified at 2 ng/cm2 after 30 seconds. The leaching process is qualitatively described by a model based on the stratigraphy of resist films.

  2. Arrays of metallic micro-/nano-structures by means of colloidal lithography and laser dewetting

    NASA Astrophysics Data System (ADS)

    Constantinescu, C.; Deepak, K. L. N.; Delaporte, P.; Utéza, O.; Grojo, D.

    2016-06-01

    Long-range arrays of prismatoid metal nanostructures are fabricated by a hybrid methodology, i.e. using Langmuir microsphere films and laser-assisted dewetting. As the initial step, we use colloidal lithography. Monolayers of 1-5 μm polystyrene microspheres covered with a thermally evaporated Ag or Au thin film of controlled thickness (5-50 nm) are then used as masks to pattern the surface of quartz, BK7 glass or silicon substrates, typically in the order of cm2. When removing the spheres by physico-chemical means (ultrasound bath and solvent wash), the resulting surface shows an array of nm-size prismatoid structures (Fischer patterns), that can be further processed by laser. Thus, by using two different lasers (355-nm wavelength, 50-ps duration and 193-nm wavelength, 15-ns duration) for the metal dewetting, we control the shape of the deposited nanostructures. A detailed study is presented here on the reshaping of such metal structures through laser annealing. This new hybrid methodology expands the panel of microsphere-assisted technologies employed in preparing surface nanomaterials.

  3. Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Erdmann, Andreas; Evanschitzky, Peter; Neumann, Jens Timo; Gräupner, Paul

    2016-04-01

    The mask plays a significant role as an active optical element in lithography, for both deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature-dependent shifts of the best-focus position and other aberration-like effects were reported both for DUV immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively. Several strategies to compensate the mask-induced phase effects are discussed.

  4. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect

    Zhang, Yonghui; Wei, Tongbo Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  5. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Yonghui; Wei, Tongbo; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin

    2014-07-01

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  6. Extending lithography with advanced materials

    NASA Astrophysics Data System (ADS)

    Guerrero, Douglas J.

    2014-03-01

    Material evolution has been a key enabler of lithography nodes in the last 30 years. This paper explores the evolution of anti-reflective coatings and their transformation from materials that provide only reflection control to advanced multifunctional layers. It is expected that complementary processes that do not require a change in wavelength will continue to dominate the development of new devices and technology nodes. New device architecture, immersion lithography, negative-tone development, multiple patterning, and directed self-assembly have demonstrated the capabilities of extending lithography nodes beyond what anyone thought would be possible. New material advancements for future technology nodes are proposed.

  7. Programmable imprint lithography template

    DOEpatents

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  8. High-fidelity replication of Dammann gratings using soft lithography.

    PubMed

    Wang, Wei; Zhou, Changhe; Jia, Wei

    2008-04-01

    We report the experimental results of using the soft lithography method for replication of Dammann gratings. By using an elastomeric stamp, uniform grating structures were transferred to the UV-curable polymer. To evaluate the quality of the replication, diffraction images and light intensity were measured. Compared with the master devices, the replicas of Dammann gratings show a slight deviation in both surface relief profile and optical performance. Experimental results demonstrated that high-fidelity replication of Dammann gratings is realized by using soft lithography with low cost and high throughput.

  9. Microphotonic parabolic light directors fabricated by two-photon lithography

    SciTech Connect

    Atwater, J. H.; Spinelli, P.; Kosten, E.; Parsons, J.; Van Lare, C.; Van de Groep, J.; Garcia de Abajo, J.; Polman, A.; Atwater, H. A.

    2011-10-10

    We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 μm high and 10 μm in diameter exhibit strong beam directivity with a beam divergence of 5.6°, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs.

  10. Quantum lithography beyond the diffraction limit via Rabi-oscillations

    NASA Astrophysics Data System (ADS)

    Liao, Zeyang; Al-Amri, Mohammad; Zubairy, M. Suhail

    2011-03-01

    We propose a quantum optical method to do the sub-wavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi-oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. This method is expected to be realizable using current technology. This work is supported by a grant from the Qatar National Research Fund (QNRF) under the NPRP project and a grant from the King Abdulaziz City for Science and Technology (KACST).

  11. Preliminary microfluidic simulations for immersion lithography

    NASA Astrophysics Data System (ADS)

    Wei, Alexander C.; Nellis, Greg F.; Abdo, Amr Y.; Engelstad, Roxann L.; Chen, Cheng-Fu; Switkes, Michael; Rothschild, Mordechai

    2003-06-01

    The premise behind immersion lithography is to improve the resolution for optical lithography technology by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer. This is accomplished through the insertion of a high index liquid in place of the low index air that currently fills the gap. The fluid management system must reliably fill the lens-wafer gap with liquid, maintain the fill under the lens throughout the entire wafer exposure process, and ensure that no bubbles are entrained during filling or scanning. This paper presents a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer in immersion lithography. The objective of this feasibility study was to identify liquid candidates that meet both optical and specific fluid mechanical requirements. The mechanics of the filling process was analyzed to simplify the problem and identify those fluid properties and system parameters that affect the process. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer were developed for simulating the process. The CFD simulations were used to investigate two methods of liquid deposition. In the first, a liquid is dispensed onto the wafer as a "puddle" and then the wafer and liquid move under the lens. This is referred to as passive filling. The second method involves the use of liquid jets in close proximity to the edge of the lens and is referred to as active filling. Numerical simulations of passive filling included a parametric study of the key dimensionless group influencing the filling process and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements. For active filling, preliminary simulation results characterized the influence of the jets on fluid flow.

  12. Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography

    SciTech Connect

    Zhang, Yonghui; Wei, Tongbo Xiong, Zhuo; Chen, Yu; Zhen, Aigong; Shan, Liang; Zhao, Yun; Hu, Qiang; Li, Jinmin; Wang, Junxi

    2014-11-21

    In this study, the multiple-exposure nanosphere-lens lithography method utilizing the polystyrene nanospheres with focusing behavior is investigated and introduced to fabricate diverse photonic crystals (PCs) on indium tin oxide to enhance the optical output power of GaN-based light-emitting diode (LED). Simulated results indicate that the focused light intensity decreases with increasing tilted angle due to the shadow effect introduced by adjacent nanospheres. The fill factor of nanopattern is tunable by controlling tilted angles and exposure times. To attain quadruple PC without overlapping patterns, mathematical calculation model is used to define the optimum range of tilted angles. Angular emission patterns and three-dimensional finite-difference time domain simulated results indicate that the enhanced light extraction of PC LEDs results mainly from diffused scattering effects, and the diffraction effects of PC on light extracted efficiency increase with the increase of fill factor. Furthermore, it is confirmed that the multiple PC can extract more light from GaN into air than common PC with same period and fill factor.

  13. Recent developments of x-ray lithography in Canada

    NASA Astrophysics Data System (ADS)

    Chaker, Mohamed; Boily, Stephane; Ginovker, A.; Jean, Alain; Kieffer, Jean-Claude; Mercier, P. P.; Pepin, Henri; Leung, Pak; Currie, John F.; Lafontaine, Hugues

    1991-08-01

    An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

  14. Reducing DfM to practice: the lithography manufacturability assessor

    NASA Astrophysics Data System (ADS)

    Liebmann, Lars; Mansfield, Scott; Han, Geng; Culp, James; Hibbeler, Jason; Tsai, Roger

    2006-03-01

    The need for accurate quantification of all aspects of design for manufacturability using a mutually compatible set of quality-metrics and units-of-measure, is reiterated and experimentally verified. A methodology to quantify the lithography component of manufacturability is proposed and its feasibility demonstrated. Three stages of lithography manufacturability assessment are described: process window analysis on realistic integrated circuits following layout manipulations for resolution enhancement and the application of optical proximity correction, failure sensitivity analysis on simulated achievable dimensional bounds (a.k.a. variability bands), and yield risk analysis on iso-probability bands. The importance and feasibility of this technique is demonstrated by quantifying the lithography manufacturability impact of redundant contact insertion and Critical Area optimization in units that can be used to drive an overall layout optimization. The need for extensive experimental calibration and improved simulation accuracy is also highlighted.

  15. Pattern-integrated interference lithography: prospects for nano- and microelectronics.

    PubMed

    Leibovici, Matthieu C R; Burrow, Guy M; Gaylord, Thomas K

    2012-10-08

    In recent years, limitations in optical lithography have challenged the cost-effective manufacture of nano- and microelectronic chips. Spatially regular designs have been introduced to improve manufacturability. However, regular designed layouts typically require an interference step followed by a trim step. These multiple steps increase cost and reduce yield. In the present work, Pattern-Integrated Interference Lithography (PIIL) is introduced to address this problem. PIIL is the integration of interference lithography and superposed pattern mask imaging, combining the interference and the trim into a single-exposure step. Example PIIL implementations and experimental demonstrations are presented. The degrees of freedom associated with the source, pattern mask, and Fourier filter designs are described.

  16. Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films

    NASA Astrophysics Data System (ADS)

    Ferrieu, F.; Chaton, C.; Neira, D.; Beitia, C.; Mota, L. Proenca; Papon, A. M.; Tarnowka, A.

    2007-09-01

    Amorphous Carbon films deposited by PECVD (RF) have recently been introduced as a new material for semiconductor processing, e.g. in 193 nm ARC lithography [1] and in the DRAM production [2]. A large amount of literature has already been published on with regard to the applications of this class of material [3]. Hence, it has been reported that Amorphous Carbon films undergo a hydrogen chemical desorption when deposited above 500 °C, together with an amorphous to graphite phase transition. Unfortunately, the intrinsic nature of the amorphous carbons depends strongly upon deposition techniques. Film morphology can be completely different from one case to another since there are so many deposition techniques. Optical characterization of these films has also undergone development for several decades. In Spectroscopic Ellipsometry (SE), several models have been proposed from simple Lorentz oscillators' absorption, toward the Tauc Lorentz or Forhoui Bloomer equations. Nevertheless, none of these models sufficiently quantitatively explain the experimental data. In some cases, a simple `Effective Medium Approximation', (EMA), is able to determine the sp2/sp3 bounds present in the film. However, the validity limitation of this approach remains questionable when considering films in a wide range of film thicknesses. In line, metrology for semiconductor requires robust models, which account for parameters such as temperature deposition, stress and film resistivity as well. Different solutions are investigated from our optical measurements, including a biaxial anisotropy hypothesis, which has been proposed by J. Leng et al. [3] from BPR (Beam Reflectometry Profile) and with SE measurements [4]. Our results are considered, together with other surface analysis techniques (XRD, IR and Raman) and confronted to TEM observations.

  17. Shadow overlap ion-beam lithography for nanoarchitectures.

    PubMed

    Choi, Yeonho; Hong, Soongweon; Lee, Luke P

    2009-11-01

    Precisely constructed nanoscale devices and nanoarchitectures with high spatial resolution are critically needed for applications in high-speed electronics, high-density memory, efficient solar cells, optoelectronics, plasmonics, optical antennas, chemical sensors, biological sensors, and nanospectroscopic imaging. Current methods of classical optical lithography are limited by the diffraction effect of light for nanolithography, and the state of art of e-beam or focused ion beam lithography limit the throughput and further reduction less than few nanometers for large-area batch fabrication. However, these limits can be surpassed surprisingly by utilizing the overlap of two shadow images. Here we present shadow overlap of ion-beam lithography (SOIL), which can combine the advantages of parallel processing, tunable capability of geometries, cost-effective method, and high spatial resolution nanofabrication technique. The SOIL method relies on the overlap of shadows created by the directional metal deposition and etching angles on prepatterned structures. Consequently, highly tunable patterns can be obtained. As examples, unprecedented nanoarchitectures for optical antennas are demonstrated by SOIL. We expect that SOIL can have a significant impact not only on nanoscale devices, but also large-scale (i.e., micro and macro) three-dimensional innovative lithography.

  18. Design and fabrication of diverse metamaterial structures by holographic lithography.

    PubMed

    Yang, Yi; Li, Qiuze; Wang, Guo Ping

    2008-07-21

    We demonstrate a holographic lithography for the fabrication of diverse metamaterial structures by using an optical prism. Cylindrical nanoshells, U-shaped resonator arrays, and double-split ring arrays are obtained experimentally by real time modulating the phase relation of the interference beams. This easy-to-use method may provide a roadway for the design and fabrication of future metamaterials requiring diverse structures for effectively manipulating electromagnetic properties at optical frequencies.

  19. Decal transfer lithography

    NASA Astrophysics Data System (ADS)

    Childs, William Robert

    A new soft-lithographic method for micropatterning polymeric resists, Decal Transfer Lithography (DTL), is described. This technique is based on the adhesive transfer of elastomeric decal patterns via the engineered adhesion and release properties of a compliant poly(dimethylsiloxane) (PDMS) patterning tool. This procedure is capable of transferring micron to sub-micron-sized features with high fidelity over large substrate areas in both open and closed forms, negative and positive image contrasts. Methods are introduced to promote adhesion of PDMS to noble metals using either of two methods: self-assembling monolayers (SAMs) or silicon dioxide capping layers. A novel UV/Ozone (UVO) mask was developed, which allows the photopatterning of UVO modifications of polymer surfaces. This modification in turn enables the direct photoinitiated patterning of resist patterns transferred by the soft-lithographic DTL method Photodefined-Cohesive Mechanical Failure (P-CMF), which fuses the design rules of the contact based adhesive transfer of PDMS in DTL with those of photolithography. The second, so-called Spartacus method, transfers the design rules of photolithography directly onto PDMS surfaces, enabling a photodefined adhesive transfer of PDMS films onto silicon oxide surfaces. The most significant advance embodied in the DTL method, however, is that is offers useful new capabilities for the design and fabrication of patterns of non-planar surfaces, 3D microfluidic assemblies, and microreactors.

  20. Lithography overlay controller formulation

    NASA Astrophysics Data System (ADS)

    Bode, Christopher A.; Toprac, Anthony J.; Edwards, Richard D.; Edgar, Thomas F.

    2000-08-01

    Lithography overlay refers to the measurement of the alignment of successive patterns within the manufacture of semiconductor devices. Control of overlay has become of great importance in semiconductor manufacturing, as the tolerance for overlay error is continually shrinking in order to manufacture next-generation semiconductor products. Run-to-run control has become an attractive solution to many control problems within the industry, including overlay. The term run-to-run control refers to any automated procedure whereby recipe settings are updated between successive process runs in order to keep the process under control. The following discussion will present the formulation of such a controller by examining control of overlay. A brief introduction of overlay will be given, highlighting the control challenge overlay presents. A data management methodology that groups like processes together in order to improve controllability, referred to as control threads, will then be presented. Finally, a discussion of linear model predictive control will show its utility in feedback run-to-run control.

  1. Five beam holographic lithography for simultaneous fabrication of three dimensional photonic crystal templates and line defects using phase tunable diffractive optical element.

    PubMed

    Lin, Yuankun; Harb, Ahmad; Lozano, Karen; Xu, Di; Chen, K P

    2009-09-14

    This paper demonstrates an approach for laser holographic patterning of three-dimensional photonic lattice structures using a single diffractive optical element. The diffractive optical element is fabricated by recording gratings in a photosensitive polymer using a two-beam interference method and has four diffraction gratings oriented with four-fold symmetry around a central opening. Four first-order diffracted beams from the gratings and one non-diffracted central beam overlap and form a three-dimensional interference pattern. The phase of one side beam is delayed by inserting a thin piece of microscope glass slide into the beam. By rotating the glass slide, thus tuning the phase of the side beam, the five beam interference pattern changes from face-center tetragonal symmetry into diamond-like lattice symmetry with an optimal bandgap. Three-dimensional photonic crystal templates are produced in a photoresist and show the phase tuning effect for bandgap optimization. Furthermore, by integrating an amplitude mask in the central opening, line defects are produced within the photonic crystal template. This paper presents the first experimental demonstration on the holographic fabrication approach of three-dimensional photonic crystal templates with functional defects by a single laser exposure using a single optical element.

  2. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  3. Coherence management in lithography printing systems

    NASA Astrophysics Data System (ADS)

    Bernasconi, Johana; Scharf, Toralf; Herzig, Hans Peter; Voelkel, Reinhard; Bramati, Arianna

    2016-03-01

    In proximity lithography, interference and diffraction effects arise when printing small features because of the proximity gap. Different techniques are used in order to control and take advantage of these effects. In this paper, the focus is set on the MO Exposure Optics developed to shape the angular spectrum of the exposure light. The MO Exposure Optics contains several elements including microlens arrays that have certain symmetry and sampling. The MO Exposure Optics allows to set the angle of illumination and can be used to define spatial coherence. We study here in detail the influence of different illumination settings on optical proximity correction (OPC) structures. We apply this concept for the first time to a LED illumination. The propagation of light after an optical proximity correction structure is measured by recording aerial images over a distance of up to 60 μm behind the mask with a high resolution microscope setup.1 As an example structure, we investigate here an optical proximity correction structure that is intended to make the edge of a line sharper. Using illumination filter plates that limit the angle of illumination and increase the coherence lead to pronounced interference effects in aerial images as expected. But special settings of the illumination allow to achieve comparable results with much larger illumination angles and higher throughput. We will show examples and analyze the results

  4. Porphyrin-Based Photocatalytic Lithography

    SciTech Connect

    Bearinger, J; Stone, G; Christian, A; Dugan, L; Hiddessen, A; Wu, K J; Wu, L; Hamilton, J; Stockton, C; Hubbell, J

    2007-10-15

    Photocatalytic lithography is an emerging technique that couples light with coated mask materials in order to pattern surface chemistry. We excite porphyrins to create radical species that photocatalytically oxidize, and thereby pattern, chemistries in the local vicinity. The technique advantageously does not necessitate mass transport or specified substrates, it is fast and robust and the wavelength of light does not limit the resolution of patterned features. We have patterned proteins and cells in order to demonstrate the utility of photocatalytic lithography in life science applications.

  5. Polymer nanofibers by soft lithography

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Maruccio, Giuseppe; Mele, Elisa; Persano, Luana; Di Benedetto, Francesca; Cingolani, Roberto

    2005-09-01

    The fabrication of polymeric fibers by soft lithography is demonstrated. Polyurethane, patterned by capillarity-induced molding with high-resolution elastomeric templates, forms mm-long fibers with a diameter below 0.3μm. The Young's modulus of the fabricated structures, evaluated by force-distance scanning probe spectroscopy, has a value of 0.8MPa. This is an excellent example of nanostructures feasible by the combination of soft nanopatterning and high-resolution fabrication approaches for master templates, and particularly electron-beam lithography.

  6. Coulomb blur advantage of a multi-shaped beam lithography approach

    NASA Astrophysics Data System (ADS)

    Slodowski, Matthias; Doering, Hans-Joachim; Elster, Thomas; Stolberg, Ines A.

    2009-03-01

    This paper describes a new multi beam approach in electron beam lithography called Multi Shaped Beam (MSB). Based on the well known Variable Shaped Beam (VSB) principle, the single shaped beam arrangement is extended and complemented by an array of individually controlled shaped beams. The positive effect of the MSB approach on resolution limiting stochastic beam blur due to Coulomb interactions will be highlighted applying detailed electron-optical Monte-Carlo simulations. To verify the feasibility of the above-mentioned new approach, there is also depicted a proof-of-lithography test stand based on a complete e-beam-lithography system containing MSB-specific hardware and software components.

  7. Microfabrication using soft lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Xiao-Mei

    Soft Lithography is a group of non-photolithographic techniques currently being explored in our group. Four such techniques-microcontact printing (μCP), replica molding (REM), micromolding in capillaries (MIMIC), and microtransfer molding (μTM)-have been demonstrated for fabricating micro- and nanostructures of a variety of materials with dimension >=30 nm. Part I (Chapters 1-5) reviews several aspects of the three molding techniques REM, MIMIC, and μTM. Chapters 1-3 describe μTM and MIMIC, and the use of these techniques in the fabrication of functional devices. μTM is capable of generating μm-scale structures over large areas, on both planar and contoured surfaces, and is able to make 3-dimensional structures layer by layer. The capability of μTM and MIMIC has been demonstrated in the fabrication of single-mode waveguides, waveguide couplers and interferometers. The coupling between waveguides can be tailored by waveguide spacing or the differential in curing time between the waveguides and the cladding. Chapters 4-5 demonstrate the combination of REM and shrinkable polystyrene (PS) films to reduce the feature size of microstructures and to generate microstructures with high aspect ratios on both planar and curved surfaces. A shrinkable PS film is patterned with relief structures, and then heated and shrinks. Thermal shrinkage results in a 100-fold increase in the aspect ratio of the patterned microstructures in the PS film. The microstructures in the shrunken PS films can be transferred to many other materials by REM. Part II (Chapters 6-7) focuses on two issues in the microfabrication using self-assembled monolayers (SAMs) as ultrathin resists. Chapter 6 describes a selective etching solution for transferring patterns of SAMs of alkanethiolates into the underlying layers (e.g., gold, silver, and copper). This etching solution uses thiosulfate as the ligand that coordinates to the metal ions, and ferricyanide as the oxidant. It has been demonstrated to be

  8. Using scanning electrochemical microscopy to probe chemistry at the solid-liquid interface in chemically amplified immersion lithography

    NASA Astrophysics Data System (ADS)

    LeSuer, Robert J.; Fan, Fu-Ren F.; Bard, Allen J.; Taylor, J. Christopher; Tsiartas, Pavlos; Willson, Grant; Conley, Willard E.; Feit, Gene; Kunz, Roderick R.

    2004-05-01

    Three modes of scanning electrochemical microscopy (SECM) - voltammetry, pH, and conductivity - have been used to better understand the chemistry at, and diffusion through, the solid/liquid interface formed between a resist film and water in 193 nm immersion lithography. Emphasis has been placed on investigating the photoacid generator (PAG), triphenylsulfonium perfluorobutanesulfonate, and the corresponding photoacid. The reduction of triphenylsulfonium at a hemispherical Hg microelectrode was monitored using square wave voltammetry to detect trace amounts of the PAG leaching from the surface. pH measurements at a 100 μm diameter Sb microelectrode show the formation of acid in the water layer above a resist upon exposure with UV irradiation. Bipolar conductance measurements at a 100 μm Pt tip positioned 100 μm from the surface indicate that the conductivity of the solution during illumination is dependent upon the percentage of PAG in the film. Liquid chromatography mass spectrometric analysis of water samples in contact with resist films has been used to quantify the amounts (< 10 ng/cm2) of PAG leaching from the film in the dark which occurs within the first 30 seconds of contact time. Washing the film removes approximately 80% of the total leachable PAG.

  9. Combined laser calorimetry and photothermal technique for absorption measurement of optical coatings

    SciTech Connect

    Li Bincheng; Blaschke, Holger; Ristau, Detlev

    2006-08-10

    To the best of our knowledge, a combined sensitive technique employing both laser calorimetry and a surface thermal lens scheme for measuring absorption values of optical coatings is presented for the first time. Laser calorimetric and pulsed surface thermal lens signals are simultaneously obtained with a highly reflecting UV coating sample irradiated at 193 nm. The advantages and potential applications of the combined technique and the experimental factors limiting the measurement sensitivity are discussed.

  10. Combined laser calorimetry and photothermal technique for absorption measurement of optical coatings.

    PubMed

    Li, Bincheng; Blaschke, Holger; Ristau, Detlev

    2006-08-10

    To the best of our knowledge, a combined sensitive technique employing both laser calorimetry and a surface thermal lens scheme for measuring absorption values of optical coatings is presented for the first time. Laser calorimetric and pulsed surface thermal lens signals are simultaneously obtained with a highly reflecting UV coating sample irradiated at 193 nm. The advantages and potential applications of the combined technique and the experimental factors limiting the measurement sensitivity are discussed.

  11. Biomolecular Patterning via Photocatalytic Lithography

    SciTech Connect

    Bearinger, J P; Hiddessen, A L; Wu, K J; Christian, A T; Dugan, L C; Stone, G; Camarero, J; Hinz, A K; Hubbell, J A

    2005-02-18

    We have developed a novel method for patterning surface chemistry: Photocatalytic Lithography. This technique relies on inexpensive stamp materials and light; it does not necessitate mass transport or specified substrates, and the wavelength of light should not limit feature resolution. We have demonstrated the utility of this technique through the patterning of proteins, single cells and bacteria.

  12. Advanced oxidation scanning probe lithography

    NASA Astrophysics Data System (ADS)

    Ryu, Yu K.; Garcia, Ricardo

    2017-04-01

    Force microscopy enables a variety of approaches to manipulate and/or modify surfaces. Few of those methods have evolved into advanced probe-based lithographies. Oxidation scanning probe lithography (o-SPL) is the only lithography that enables the direct and resist-less nanoscale patterning of a large variety of materials, from metals to semiconductors; from self-assembled monolayers to biomolecules. Oxidation SPL has also been applied to develop sophisticated electronic and nanomechanical devices such as quantum dots, quantum point contacts, nanowire transistors or mechanical resonators. Here, we review the principles, instrumentation aspects and some device applications of o-SPL. Our focus is to provide a balanced view of the method that introduces the key steps in its evolution, provides some detailed explanations on its fundamentals and presents current trends and applications. To illustrate the capabilities and potential of o-SPL as an alternative lithography we have favored the most recent and updated contributions in nanopatterning and device fabrication.

  13. Advanced oxidation scanning probe lithography.

    PubMed

    Ryu, Yu K; Garcia, Ricardo

    2017-04-07

    Force microscopy enables a variety of approaches to manipulate and/or modify surfaces. Few of those methods have evolved into advanced probe-based lithographies. Oxidation scanning probe lithography (o-SPL) is the only lithography that enables the direct and resist-less nanoscale patterning of a large variety of materials, from metals to semiconductors; from self-assembled monolayers to biomolecules. Oxidation SPL has also been applied to develop sophisticated electronic and nanomechanical devices such as quantum dots, quantum point contacts, nanowire transistors or mechanical resonators. Here, we review the principles, instrumentation aspects and some device applications of o-SPL. Our focus is to provide a balanced view of the method that introduces the key steps in its evolution, provides some detailed explanations on its fundamentals and presents current trends and applications. To illustrate the capabilities and potential of o-SPL as an alternative lithography we have favored the most recent and updated contributions in nanopatterning and device fabrication.

  14. Graphic Arts/Offset Lithography.

    ERIC Educational Resources Information Center

    Hoisington, James; Metcalf, Joseph

    This revised curriculum for graphic arts is designed to provide secondary and postsecondary students with entry-level skills and an understanding of current printing technology. It contains lesson plans based on entry-level competencies for offset lithography as identified by educators and industry representatives. The guide is divided into 15…

  15. High performance fluoride optical coatings for DUV optics

    NASA Astrophysics Data System (ADS)

    Zhang, Lichao; Cai, Xikun

    2014-08-01

    In deep ultraviolet region that typical applications are used on the ArF wavelength, coated optics should meet stringent requirements of optical systems. To meet these requirements, systematical researches are carried out on fabrication and characterization methods of fluoride coatings. First, by optimizing of deposition processes, dense coatings with the refractive index of ~1.7 for LaF3 and ~1.4 for MgF2, together with extinction coefficients of ~2×10-4 on 193nm were realized. The transmission of AR coating for 193nm achieved by using optimized deposition techniques is 99.8%. Second, a method of designing shadowing masks was developed to solve the problem of correcting coating thickness distributions for complex DUV systems. By using the method, the thickness distribution error specification of 3% PV has been achieved on substrates with ~300mm diameters and large curvatures. Finally, the laser calorimetry method is used to evaluate the laser radiation stability of fluoride coatings. It is turned out that the damage coefficients of fluoride coatings, which are defined as the values of unrecoverable increase of the absorption during the laser irradiation process, are much lower than that of fused silica substrates. The above progresses could further support the realization of high performance DUV optical systems.

  16. Layered nano-gratings by electron beam writing to form 3-level diffractive optical elements for 3D phase-offset holographic lithography

    NASA Astrophysics Data System (ADS)

    Yuan, Liang (Leon); Herman, Peter R.

    2015-11-01

    A multi-level nanophotonic structure is a major goal in providing advanced optical functionalities as found in photonic crystals and metamaterials. A three-level nano-grating phase mask has been fabricated in an electron-beam resist (ma-N) to meet the requirement of holographic generation of a diamond-like 3D nanostructure in photoresist by a single exposure step. A 2D mask with 600 nm periodicity is presented for generating first order diffracted beams with a preferred π/2 phase shift on the X- and Y-axes and with sufficient 1st order diffraction efficiency of 3.5% at 800 nm wavelength for creating a 3D periodic nanostructure in SU-8 photoresist. The resulting 3D structure is anticipated to provide an 8% complete photonic band gap (PBG) upon silicon inversion. A thin SiO2 layer was used to isolate the grating layers and multiple spin-coating steps served to planarize the final resist layer. A reversible soft coating (aquaSAVE) was introduced to enable SEM inspection and verification of each insulating grating layer. This e-beam lithographic method is extensible to assembling multiple layers of a nanophotonic structure.

  17. Materials for and performance of multilayer lithography schemes

    NASA Astrophysics Data System (ADS)

    Weimer, Marc; Wang, Yubao; Neef, Charles J.; Claypool, James; Edwards, Kevin; Zu, Zhimin

    2007-03-01

    The 45-nm node will require the use of thinner photoresists, which necessitates the use of multilayer pattern transfer schemes. One common multilayer approach is the use of a silicon-rich anti-reflective hardmask (Si BARC) with a carbon-rich pattern transfer underlayer (spin-on carbon, or SOC). The combination of the two layers provides a highly planar platform for a thin resist, and provides a route to etch substrates due to the alternating plasma etch selectivities of the organic resist, inorganic Si BARC, and organic SOC. Yet such schemes will need to be optimized both for pattern transfer and optics. Optimizing optics under hyper-NA immersion conditions is more complicated than with standard (that is, NA<1) lithography. A rigorous calculation technique is used to evaluate and compare standard lithography to a hyper-NA case using a multilayer stack. An example of such a stack is shown to have reasonable lithographic performance.

  18. High resolution patterning for flexible electronics via roll-to-roll nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Sabik, Sami; de Riet, Joris; Yakimets, Iryna; Smits, Edsger

    2014-03-01

    Flexible electronics is a growing field and is currently maturing in applications such as displays, smart packaging, organic light-emitting diodes and organic photovoltaic cells. In order to process on flexible substrates at high throughput and large areas, novel patterning techniques will be essential. Conventional optical lithography is limited in throughput as well as resolution, and requires several alignment steps to generate multi-layered patterns, required for applications such as thin-film transistors. It therefore remains a complex and expensive process. Nanoimprint lithography is an emerging alternative to optical lithography, demonstrating patterning capabilities over a wide range of resolutions, from several microns down to a few nanometres. For display applications, nanoimprint lithography can be used to pattern various layers. Micron sized thin-film transistors for backplane can be fabricated where a self-aligned geometry is used to decrease the number of alignment steps, and increase the overlay accuracy. In addition, nano-structures can be used for optical applications such as anti-reflective surfaces and nano patterned transparent electrodes. Imprint lithography is a fully roll-to-roll compatible process and enables large area and high throughput fabrication for flexible electronics. In this paper we discuss the possibilities and the challenges of large area patterning by roll-to-roll nanoimprint lithography, reviewing micron and nano sized structures realized on our roll-to-roll equipment. Nano patterned transparent electrodes, moth-eye antireflective coatings, and multilevel structures will be covered.

  19. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  20. Photoresist composition for extreme ultraviolet lithography

    SciTech Connect

    Felter, T.E.; Kubiak, G.D.

    1999-11-23

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4--0.05 {mu}m using projection lithography and extreme ultraviolet (EUV) radiation is disclosed. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  1. Multilayer reflective coatings for extreme-ultraviolet lithography

    SciTech Connect

    Montcalm, C., LLNL

    1998-03-10

    Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling technology for EUV lithography. Mo/Si multilayers with reflectances of 67.5% at 13.4 nm are now routinely achieved and reflectances of 70 2% at 11.4 nm were obtained with MO/Be multilayers. High reflectance is achieved with careful control of substrate quality, layer thicknesses, multilayer materials, interface quality, and surface termination. Reflectance and film stress were found to be stable relative to the requirements for application to EUV lithography. The run-to-run reproducibility of the reflectance peak position was characterized to be better than 0.2%, providing the required wavelength matching among the seven multilayer-coated mirrors used in the present lithography system design. Uniformity of coating was improved to better than 0.5% across 150 mm diameter substrates. These improvements in EUV multilayer mirror technology will enable us to meet the stringent specifications for coating the large optical substrates for our next-generation EUV lithography system.

  2. Multiphoton laser lithography for the fabrication of plasmonic components

    NASA Astrophysics Data System (ADS)

    Passinger, Sven; Koch, Jürgen; Kiyan, Roman; Reinhardt, Carsten; Chichkov, Boris N.

    2006-08-01

    In this contribution, we demonstrate multi-photon femtosecond laser lithography for the fabrication and rapid prototyping of plasmonic components. Using this technology different dielectric and metallic SPP-structures can be fabricated in a low-cost and time-efficient way. Resolution limits of this technology will be discussed. Investigations of the optical properties of the fabricated SPP-structures by far-field leakage radiation microscopy will be reported.

  3. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOEpatents

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  4. The Exicor DUV birefringence measurement system and its application to measuring lithography-grade CaF2 lens blanks

    NASA Astrophysics Data System (ADS)

    Wang, Baoliang; Griffiths, C. O.; Rockwell, Rick R.; List, Jennifer; Mark, Doug

    2003-11-01

    Optical lithography continues its transition to shorter wavelengths to support the semiconductor industry"s production of faster microchips to meet evolving market demands. The next step for optical lithography is likely to use the F2 excimer laser at 157.63 nm (157 nm,according to the industry" s naming convention).At 157 nm, among the limited number of fluoride crystals with acceptable optical properties calcium fluoride is the only practical lens material for step and scan systems due to its readiness for mass production. Since the discovery of intrinsic birefringence in CaF2 at deep ultraviolet (DUV)wavelengths,the optical lithography industry has developed a critical interest in measuring birefringence at 157 nm. In response to this need, we have developed a DUV birefringence measurement system. In this article,we describe the working principle, system construction, technical performance and selected applications for measuring lithography grade calcium fluoride lens blanks at DUV wavelengths.

  5. Fabrication of 2D and 3D photonic structures using laser lithography

    NASA Astrophysics Data System (ADS)

    Gaso, P.; Jandura, D.; Pudis, D.

    2016-12-01

    In this paper we demonstrate possibilities of three-dimensional (3D) printing technology based on two photon polymerization. We used three-dimensional dip-in direct-laser-writing (DLW) optical lithography to fabricate 2D and 3D optical structures for optoelectronics and for optical sensing applications. DLW lithography allows us use a non conventional way how to couple light into the waveguide structure. We prepared ring resonator and we investigated its transmission spectral characteristic. We present 3D inverse opal structure from its design to printing and scanning electron microscope (SEM) imaging. Finally, SEM images of some prepared photonic crystal structures were performed.

  6. Development of plant-based resist material derived from biomass on hardmask layer in ultraviolet curing nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi

    2012-06-01

    Nanopatterning printability due to high sensitivity and low film thickness shrinkage of ultraviolet curing process in resist material was one of key to achieve high resolution and quality of nanoimprint lithography. The new ultraviolet curing plant-based resist material derived from biomass was investigated to achieve high quality of 100 nm line and space patterning images in the optimized conditions of ultraviolet curing nanoimprint lithography technology for the optical films containing light-emitting diodes, solar cell devices, actuators, biosensors, and micro electro mechanical systems. The newly plantbased resist material derived from biomass is expected as one of the nanoimprint lithography technology in next generation optical devices and biosensors.

  7. X-ray lithography source

    DOEpatents

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  8. X-ray lithography source

    DOEpatents

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  9. Fabrication and Characterization of Three Dimensional Photonic Crystals Generated by Multibeam Interference Lithography

    ERIC Educational Resources Information Center

    Chen, Ying-Chieh

    2009-01-01

    Multibeam interference lithography is investigated as a manufacturing technique for three-dimensional photonic crystal templates. In this research, optimization of the optical setup and the photoresist initiation system leads to a significant improvement of the optical quality of the crystal, as characterized by normal incidence optical…

  10. Maskless plasmonic lithography at 22 nm resolution.

    PubMed

    Pan, Liang; Park, Yongshik; Xiong, Yi; Ulin-Avila, Erick; Wang, Yuan; Zeng, Li; Xiong, Shaomin; Rho, Junsuk; Sun, Cheng; Bogy, David B; Zhang, Xiang

    2011-01-01

    Optical imaging and photolithography promise broad applications in nano-electronics, metrologies, and single-molecule biology. Light diffraction however sets a fundamental limit on optical resolution, and it poses a critical challenge to the down-scaling of nano-scale manufacturing. Surface plasmons have been used to circumvent the diffraction limit as they have shorter wavelengths. However, this approach has a trade-off between resolution and energy efficiency that arises from the substantial momentum mismatch. Here we report a novel multi-stage scheme that is capable of efficiently compressing the optical energy at deep sub-wavelength scales through the progressive coupling of propagating surface plasmons (PSPs) and localized surface plasmons (LSPs). Combining this with airbearing surface technology, we demonstrate a plasmonic lithography with 22 nm half-pitch resolution at scanning speeds up to 10 m/s. This low-cost scheme has the potential of higher throughput than current photolithography, and it opens a new approach towards the next generation semiconductor manufacturing.

  11. Cubic Silsesquioxanes as a Green, High-Performance Mold Material for Nanoimprint Lithography

    SciTech Connect

    Ro, Hyun W.; Popova, Vera; Chen, Lei; Forster, Aaron M.; Ding, Yifu; Alvine, Kyle J.; Krug, Dave J.; Laine, Richard M.; Soles, Christopher L.

    2010-08-16

    Optical lithography deep in the UV spectrum is the predominate route for high-resolution, high-volume nanoscale pattering. However, state-of-the-art optical lithography tools are exceedingly expensive and this places serious limitations on the applications, technical sectors, and markets where highresolution patterning can be implemented. To date the only substantial market for high-end optical lithography tools has been semiconductor fabrication. Nanoimprint lithography (NIL) has recently emerged as an alternative to optical lithography and combines the potential of sub-fi ve-nanometer patterning resolution with the low cost and simplicity of a stamping process. [ 1–4 ] This has led to signifi cant efforts to implement NIL methods, not only for semiconductor logic devices, but also in fi elds as diverse as the direct patterning of interlayer dielectrics (ILDs) for back-end-of-line (BEOL) interconnect structures, [ 5–7 ] bitpatterned magnetic media for data storage, [ 8 , 9 ] and high-brightness light-emitting diodes (LEDs). [ 10 ] Some of these are new areas where nanoscale patterning has previously not been considered, and are made possible here by the low cost and simplicity of the NIL stamping processes.

  12. Particulate templates and ordered liquid bridge networks in evaporative lithography.

    PubMed

    Vakarelski, Ivan U; Kwek, Jin W; Tang, Xiaosong; O'Shea, Sean J; Chan, Derek Y C

    2009-12-01

    We investigate the properties of latex particle templates required to optimize the development of ordered liquid bridge networks in evaporative lithography. These networks are key precursors in the assembly of solutions of conducting nanoparticles into large, optically transparent, and conducting microwire networks on substrates (Vakarelski, I. U.; Chan, D. Y. C.; Nonoguchi, T.; Shinto, H.; Higashitani, K. Phys. Rev. Lett., 2009, 102, 058303). An appropriate combination of heat treatment and oxygen plasma etching of a close-packed latex particle monolayer is shown to create open-spaced particle templates which facilitates the formation of ordered fully connected liquid bridge networks that are critical to the formation of ordered microwire networks. Similar results can also be achieved if non-close-packed latex particle templates with square or honeycomb geometries are used. The present results have important implications for the development of the particulate templates to control the morphology of functional microwire networks by evaporative lithography.

  13. Metallic nanodot arrays by stencil lithography for plasmonic biosensing applications.

    PubMed

    Vazquez-Mena, Oscar; Sannomiya, Takumi; Villanueva, Luis G; Voros, Janos; Brugger, Juergen

    2011-02-22

    The fabrication of gold nanodots by stencil lithography and its application for optical biosensing based on localized surface plasmon resonance are presented. Arrays of 50-200 nm wide nanodots with different spacing of 50-300 nm are fabricated without any resist, etching, or lift-off process. The dimensions and morphology of the nanodots were characterized by scanning electron and atomic force microscopy. The fabricated nanodots showed localized surface plasmon resonance in their extinction spectra in the visible range. The resonance wavelength depends on the periodicity and dimensions of the nanodots. Bulk refractive index measurements and model biosensing of streptavidin were successfully performed based on the plasmon resonance shift induced by local refractive index change when biomolecules are adsorbed on the nanodots. These results demonstrate the potential of stencil lithography for the realization of plasmon-based biosensing devices.

  14. Optical microspectrometer

    DOEpatents

    Sweatt, William C.; Christenson, Todd R.

    2004-05-25

    An optical microspectrometer comprises a grism to disperse the spectra in a line object. A single optical microspectrometer can be used to sequentially scan a planar object, such as a dye-tagged microchip. Because the optical microspectrometer is very compact, multiple optical microspectrometers can be arrayed to provide simultaneous readout across the width of the planar object The optical microspectrometer can be fabricated with lithographic process, such as deep X-ray lithography (DXRL), with as few as two perpendicular exposures.

  15. Fabrication of subwavelength holes using nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Weiss, A.; Besser, J.; Baum, M.; Saupe, R.; Otto, T.; Gessner, T.

    2013-03-01

    Driven by the demand of miniaturized and highly integrated functionalities in the area of photonics and photonic circuits, the metal or plasmon optics has become a promising method for manipulating light at the nanometer scale. Especially the application of periodic sub wavelength hole structures within an opaque metal film on a dielectric substrate holds many advantages for the realization of optical filters, since the variation of the hole diameter and the periodicity allows a selective filter response. This paper is concerned with the modeling, fabrication and characterization of a sub wavelength hole array for surface plasmon enhanced transmission of light [1]. The theoretical backgrounds as well as the basics of the simulation by Finite-Difference Time-Domain (FDTD) are described for the target structure with a hole diameter of 180 nm and a periodicity of 400 nm. By using a double-molding technology via nanoimprint lithography the fabrication of this sub wavelength hole array with a peak wavelength of 470 nm and full width at half maximum of 50 nm from a silicon nanopillar master is demonstrated. In order to ensure the dimensional stability of the molded structures, characterization was consequently done by means of a self made non-contact mode atomic force microscope.

  16. Self-aligned grating couplers on template-stripped metal pyramids via nanostencil lithography

    NASA Astrophysics Data System (ADS)

    Klemme, Daniel J.; Johnson, Timothy W.; Mohr, Daniel A.; Oh, Sang-Hyun

    2016-05-01

    We combine nanostencil lithography and template stripping to create self-aligned patterns about the apex of ultrasmooth metal pyramids with high throughput. Three-dimensional patterns such as spiral and asymmetric linear gratings, which can couple incident light into a hot spot at the tip, are presented as examples of this fabrication method. Computer simulations demonstrate that spiral and linear diffraction grating patterns are both effective at coupling light to the tip. The self-aligned stencil lithography technique can be useful for integrating plasmonic couplers with sharp metallic tips for applications such as near-field optical spectroscopy, tip-based optical trapping, plasmonic sensing, and heat-assisted magnetic recording.

  17. Self-aligned grating couplers on template-stripped metal pyramids via nanostencil lithography.

    PubMed

    Klemme, Daniel J; Johnson, Timothy W; Mohr, Daniel A; Oh, Sang-Hyun

    2016-05-23

    We combine nanostencil lithography and template stripping to create self-aligned patterns about the apex of ultrasmooth metal pyramids with high throughput. Three-dimensional patterns such as spiral and asymmetric linear gratings, which can couple incident light into a hot spot at the tip, are presented as examples of this fabrication method. Computer simulations demonstrate that spiral and linear diffraction grating patterns are both effective at coupling light to the tip. The self-aligned stencil lithography technique can be useful for integrating plasmonic couplers with sharp metallic tips for applications such as near-field optical spectroscopy, tip-based optical trapping, plasmonic sensing, and heat-assisted magnetic recording.

  18. Discharge produced plasma source for EUV lithography

    NASA Astrophysics Data System (ADS)

    Borisov, V.; Eltzov, A.; Ivanov, A.; Khristoforov, O.; Kirykhin, Yu.; Vinokhodov, A.; Vodchits, V.; Mishhenko, V.; Prokofiev, A.

    2007-04-01

    Extreme ultraviolet (EUV) radiation is seen as the most promising candidate for the next generation of lithography and semiconductor chip manufacturing for the 32 nm node and below. The paper describes experimental results obtained with discharge produced plasma (DPP) sources based on pinch effect in a Xe and Sn vapour as potential tool for the EUV lithography. Problems of DPP source development are discussed.

  19. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  20. 16 nm-resolution lithography using ultra-small-gap bowtie apertures

    NASA Astrophysics Data System (ADS)

    Chen, Yang; Qin, Jin; Chen, Jianfeng; Zhang, Liang; Ma, Chengfu; Chu, Jiaru; Xu, Xianfan; Wang, Liang

    2017-02-01

    Photolithography has long been a critical technology for nanoscale manufacturing, especially in the semiconductor industry. However, the diffractive nature of light has limited the continuous advance of optical lithography resolution. To overcome this obstacle, near-field scanning optical lithography (NSOL) is an alternative low-cost technique, whose resolution is determined by the near-field localization that can be achieved. Here, we apply the newly-developed backside milling method to fabricate bowtie apertures with a sub-15 nm gap, which can substantially improve the resolution of NSOL. A highly confined electric near field is produced by localized surface plasmon excitation and nanofocusing of the closely-tapered gap. We show contact lithography results with a record 16 nm resolution (FWHM). This photolithography scheme promises potential applications in data storage, high-speed computation, energy harvesting, and other nanotechnology areas.

  1. 16 nm-resolution lithography using ultra-small-gap bowtie apertures.

    PubMed

    Chen, Yang; Qin, Jin; Chen, Jianfeng; Zhang, Liang; Ma, Chengfu; Chu, Jiaru; Xu, Xianfan; Wang, Liang

    2017-02-03

    Photolithography has long been a critical technology for nanoscale manufacturing, especially in the semiconductor industry. However, the diffractive nature of light has limited the continuous advance of optical lithography resolution. To overcome this obstacle, near-field scanning optical lithography (NSOL) is an alternative low-cost technique, whose resolution is determined by the near-field localization that can be achieved. Here, we apply the newly-developed backside milling method to fabricate bowtie apertures with a sub-15 nm gap, which can substantially improve the resolution of NSOL.  A highly confined electric near field is produced by localized surface plasmon excitation and nanofocusing of the closely-tapered gap. We show contact lithography results with a record 16 nm resolution (FWHM). This photolithography scheme promises potential applications in data storage, high-speed computation, energy harvesting, and other nanotechnology areas.

  2. Extension of practical k1 limit in EUV lithography

    NASA Astrophysics Data System (ADS)

    Park, Sarohan; Lee, Inwhan; Koo, Sunyoung; Lee, Junghyung; Lim, Chang-Moon

    2016-03-01

    Sub 0.3k1 regime has been widely adopted for high volume manufacturing (HVM) of optical lithography due to various resolution enhancement technologies (RETs). It is not certain when such low k1 is feasible in EUV, though most technologies are available in EUV also. In this paper, experimental results on patterning performance of line space (L/S) and contact hole (C/H) in EUV lithography will be presented. First, practical k1 value with 0.33NA EUV lithography was investigated through experiment using NXE3300 EUV tool. Patterning limit, as defined by local critical dimension uniformity (LCDU) for C/H array pattern were measured with respect to various design rules. It was evaluated that the effect of off axis illumination (OAI) mode with various illumination conditions to improve the patterning performance and to reduce k1 limit. Then the experimental results of LCDU were compared with normalized image log slope (NILS) values from simulation. EUV source mask optimization (SMO) technologies to increase NILS with FlexPupil option of EUV scanner were evaluated and possibility of further improvement was also discussed.

  3. PSM design for inverse lithography with partially coherent illumination.

    PubMed

    Ma, Xu; Arce, Gonzalo R

    2008-11-24

    Phase-shifting masks (PSM) are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. Recently, a set of gradient-based PSM optimization methods have been developed to solve for the inverse lithography problem under coherent illumination. Most practical lithography systems, however, use partially coherent illumination due to non-zero width and off-axis light sources, which introduce partial coherence factors that must be accounted for in the optimization of PSMs. This paper thus focuses on developing a framework for gradient-based PSM optimization methods which account for the inherent nonlinearities of partially coherent illumination. In particular, the singular value decomposition (SVD) is used to expand the partially coherent imaging equation by eigenfunctions into a sum of coherent systems (SOCS). The first order coherent approximation corresponding to the largest eigenvalue is used in the PSM optimization. In order to influence the solution patterns to have more desirable manufacturability properties and higher fidelity, a post-processing of the mask pattern based on the 2D discrete cosine transformation (DCT) is introduced. Furthermore, a photoresist tone reversing technique is exploited in the design of PSMs to project extremely sparse patterns.

  4. Design of soft x-ray varied-line-spacing grating based on electron beam lithography-near field lithography

    NASA Astrophysics Data System (ADS)

    Lin, Dakui; Chen, Huoyao; Kroker, Stefanie; Käsebier, Thomas; Liu, Zhengkun; Qiu, Keqiang; Liu, Ying; Kley, Ernst-Bernhard; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2016-10-01

    Soft x-ray varied line spacing grating (VLSG), which is a vital optical element for laser plasma diagnosis and spectrometry analysis, is conventionally fabricated by holographic lithography or mechanical ruling. In order to overcome the issues of the above fabrication methods, a method based on electron beam lithography-near field lithography (EBL-NFH) is proposed to make good use of the flexibility of EBL and the high throughput of NFH. In this paper, we showed a newly designed soft x-ray VLSG with a central groove density of 3600 lines/mm, which is to be realized based on EBL-NFH. First, the optimization of the spatial distribution of line density and groove profile of the VLSG was shown. As an important element in NFH, a fused silica mask plays a key role during NFH in order to obtain a required line density of VLSG. Therefore, second, the transfer relationship of spatial distribution of line densities between fused silica mask and resist grating was investigated in different exposure modes during NFH. We proposed a formulation about the transfer of line density to design of the groove density distribution of a fused silica grating mask. Finally, the spatial distribution of line densities between the fused silica mask, which is to be fabrication by using EBL, was demonstrated.

  5. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 μm wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  6. Wiring up pre-characterized single-photon emitters by laser lithography

    PubMed Central

    Shi, Q.; Sontheimer, B.; Nikolay, N.; Schell, A. W.; Fischer, J.; Naber, A.; Benson, O.; Wegener, M.

    2016-01-01

    Future quantum optical chips will likely be hybrid in nature and include many single-photon emitters, waveguides, filters, as well as single-photon detectors. Here, we introduce a scalable optical localization-selection-lithography procedure for wiring up a large number of single-photon emitters via polymeric photonic wire bonds in three dimensions. First, we localize and characterize nitrogen vacancies in nanodiamonds inside a solid photoresist exhibiting low background fluorescence. Next, without intermediate steps and using the same optical instrument, we perform aligned three-dimensional laser lithography. As a proof of concept, we design, fabricate, and characterize three-dimensional functional waveguide elements on an optical chip. Each element consists of one single-photon emitter centered in a crossed-arc waveguide configuration, allowing for integrated optical excitation and efficient background suppression at the same time. PMID:27507165

  7. Wiring up pre-characterized single-photon emitters by laser lithography

    NASA Astrophysics Data System (ADS)

    Shi, Q.; Sontheimer, B.; Nikolay, N.; Schell, A. W.; Fischer, J.; Naber, A.; Benson, O.; Wegener, M.

    2016-08-01

    Future quantum optical chips will likely be hybrid in nature and include many single-photon emitters, waveguides, filters, as well as single-photon detectors. Here, we introduce a scalable optical localization-selection-lithography procedure for wiring up a large number of single-photon emitters via polymeric photonic wire bonds in three dimensions. First, we localize and characterize nitrogen vacancies in nanodiamonds inside a solid photoresist exhibiting low background fluorescence. Next, without intermediate steps and using the same optical instrument, we perform aligned three-dimensional laser lithography. As a proof of concept, we design, fabricate, and characterize three-dimensional functional waveguide elements on an optical chip. Each element consists of one single-photon emitter centered in a crossed-arc waveguide configuration, allowing for integrated optical excitation and efficient background suppression at the same time.

  8. Modeling the lithography of ion implantation resists on topography

    NASA Astrophysics Data System (ADS)

    Winroth, Gustaf; Vaglio Pret, Alessandro; Ercken, Monique; Robinson, Stewart A.; Biafore, John J.

    2014-03-01

    With emerging technologies, such as fin-based field-effect transistors (finFETs), the structures, which define the functionality of a device, have added one dimension in the patterning and are now three-dimensional. Lithography for CMOS patterning becomes more complicated for finFETs given the three-dimensional substrate structure, and the resist modeling targeting this issue is yet to be fully investigated. Here, we present lithographic simulations on topography relevant for finFET devices compatible with nodes down to 10 nm. We investigate the influence of different materials and of the additional optical complexity due to the topography and density of the gates and fins.

  9. Nanoimprint Lithography of Al Nanovoids for Deep-UV SERS

    PubMed Central

    2014-01-01

    Deep-ultraviolet surface-enhanced Raman scattering (UV-SERS) is a promising technique for bioimaging and detection because many biological molecules possess UV absorption lines leading to strongly resonant Raman scattering. Here, Al nanovoid substrates are developed by combining nanoimprint lithography of etched polymer/silica opal films with electron beam evaporation, to give a high-performance sensing platform for UV-SERS. Enhancement by more than 3 orders of magnitude in the UV-SERS performance was obtained from the DNA base adenine, matching well the UV plasmonic optical signatures and simulations, demonstrating its suitability for biodetection. PMID:25291629

  10. Recent Printing And Registration Results With X-Ray Lithography

    NASA Astrophysics Data System (ADS)

    Fay, B.; Tai, L.; Alexander, D.

    1985-06-01

    X-ray lithography has matured from a research and development phase to an implementation phase. Accordingly, the concerns have shifted from imaging issues to those of registration, critical dimension control, step height coverage, and system repeatability. In this paper, results will be discussed relating to x-ray printing and registration for full field alignment systems with 100mm field diameter using optical verniers, SEM (scanning electron microscope) and electrical wafer probe techniques. These results will encompass micrometer and submicrometer imaging using single 'level and tri-level processing techniques.

  11. Masks for high aspect ratio x-ray lithography

    SciTech Connect

    Malek, C.K.; Jackson, K.H.; Bonivert, W.D.; Hruby, J.

    1997-04-01

    Fabrication of very high aspect ratio microstructures, as well as ultra-high precision manufacturing is of increasing interest in a multitude of applications. Fields as diverse as micromechanics, robotics, integrated optics, and sensors benefit from this technology. The scale-length of this spatial regime is between what can be achieved using classical machine tool operations and that which is used in microelectronics. This requires new manufacturing techniques, such as the LIGA process, which combines x-ray lithography, electroforming, and plastic molding.

  12. Multi-shaped beam proof of lithography

    NASA Astrophysics Data System (ADS)

    Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

    2010-03-01

    In this paper a full package high throughput multi electron-beam approach, called Multi Shaped Beam (MSB), for applications in mask making as well as direct write will be presented including complex proof-of-lithography results. The basic concept enables a significant exposure shot count reduction for advanced patterns compared to standard Variable Shaped Beam (VSB) systems and allows full pattern flexibility by concurrently using MSB, VSB and Cell Projection (CP). Proof of lithography results will be presented, which have been performed using a fully operational electron-beam lithography system including data path and substrate scanning by x/y-stage movement.

  13. Microfluidic structures for LOC devices designed by laser lithography

    NASA Astrophysics Data System (ADS)

    Figurova, M.; Pudis, D.; Gaso, P.

    2016-12-01

    Nowadays, lab on a chip (LOC) applications are very popular in the field of biomedicine. LOC device works with biological materials and enables to arrange conventional laboratory operations on a small chip. Philosophy of LOC applications stands on quick and precise diagnostics process and technology, which uses cheap materials with possibility of rapid prototyping. LOC, as a time saving application, works with small volume of samples and reagents and enables better control over the sample. We present fabrication method of functional LOC chip for different biomedical microfluidic applications based on direct laser writing (DLW) lithography. We present fabrication of few types of microfluidic and micro-optic structures with different capabilities created by DLW system. The combination of DLW lithography in photoresist layer deposited on glass substrate and polydimethylsiloxane (PDMS) replica molding process were used for patterning of designed microstructures. Prepared microfluidic and micro-optic structures were observed by confocal microscope and microfluidic flow observations were investigated by conventional optical microscope and CCD camera.

  14. Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

    NASA Astrophysics Data System (ADS)

    Martin, Luc; Manakli, Serdar; Bayle, Sebastien; Belledent, Jérôme; Soulan, Sebastien; Wiedemann, Pablo; Farah, Abdi; Schiavone, Patrick

    2012-03-01

    Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory for critical level patterning. EUV lithography is still challenged by the availability of high power source and mask defectivity and suffers from a high cost of ownership perspective. Its introduction is now not foreseen before 2015. Parallel to these mask-based technologies, maskless lithography regularly makes significant progress in terms of potential and maturity. The massively parallel e-beam solution appears as a real candidate for high volume manufacturing. Several industrial projects are under development, one in the US, with the KLA REBL project and two in Europe driven by IMS Nanofabrication (Austria; MAPPER (The Netherlands). Among the developments to be performed to secure the takeoff of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. Within this data preparation flow, advanced proximity effect corrections must be implemented to address the 16nm node and below. This paper will detail this process and compare correction strategies in terms of robustness and accuracy. It will be based on results obtained using a MAPPER tool within the IMAGINE program driven by CEA-LETI, in Grenoble, France. All proximity effects corrections and the dithering step were performed using the software platform Inscale® from Aselta Nanographics. One important advantage of Inscale® is the ability to combine both model based dose and geometry adjustment to accurately pattern critical features. The paper will focus on the advantage of combining those two corrections at the 16nm node instead of using only geometry corrections. Thanks to the simulation capability of Inscale®, pattern fidelity and correction robustness will be evaluated and compared between

  15. 3D resolution gray-tone lithography

    NASA Astrophysics Data System (ADS)

    Dumbravescu, Niculae

    2000-04-01

    With the conventional micro machining technologies: isotropic and anisotropic, dry and wet etching, a few shapes can be done. To overcome this limitation, both binary multi- tasking technique or direct EB writing were used, but an inexpensive one-step UV-lithographic method, using a so- called 'gray-tone reticle', seems to be the best choice to produce local intensity modulation during exposure process. Although, by using this method and common technologies in standard IC fabrication it is easy to obtain an arbitrarily 3D shaping of positive thick resists, there are some limitations, too. The maximum number of gray-levels, on projection reticle, achieved by e-beam writing, are only 200. Also, for very thick resists, the limited focus depth of the projection objective gives a poor lateral resolution. These are the reasons why the author prose da new approach to enhance the 3D resolution of gray-tone lithography applied for thick resist. By a high resolution, both for vertical direction, as well as for horizontal direction. Particular emphasis was put on the design, manufacturing and use of halftone transmission masks, required for UV- lithographic step in the fabrication process of mechanical, optical or electronics components. The original design and fabrication method for the gray-tone test reticle were supported by experiments showing the main advantage of this new technology: the 3D structuring of thick resist in a single exposure step and also a very promising aspect ratio obtained of over 9:1. Preliminary experimental results are presented for positive thick resists in SEM micrographs. A future optimization of the lithographic process opens interesting perspectives for application of this high 3D resolution structuring method in the fabrication process of different products, with imposed complex smooth profiles, such as: x-ray LiGA-masks, refractive optics and surface- relief DOEs.

  16. Antireflective surface patterned by rolling mask lithography

    NASA Astrophysics Data System (ADS)

    Seitz, Oliver; Geddes, Joseph B.; Aryal, Mukti; Perez, Joseph; Wassei, Jonathan; McMackin, Ian; Kobrin, Boris

    2014-03-01

    A growing number of commercial products such as displays, solar panels, light emitting diodes (LEDs and OLEDs), automotive and architectural glass are driving demand for glass with high performance surfaces that offer anti-reflective, self-cleaning, and other advanced functions. State-of-the-art coatings do not meet the desired performance characteristics or cannot be applied over large areas in a cost-effective manner. "Rolling Mask Lithography" (RML™) enables highresolution lithographic nano-patterning over large-areas at low-cost and high-throughput. RML is a photolithographic process performed using ultraviolet (UV) illumination transmitted through a soft cylindrical mask as it rolls across a substrate. Subsequent transfer of photoresist patterns into the substrate is achieved using an etching process, which creates a nanostructured surface. The current generation exposure tool is capable of patterning one-meter long substrates with a width of 300 mm. High-throughput and low-cost are achieved using continuous exposure of the resist by the cylindrical photomask. Here, we report on significant improvements in the application of RML™ to fabricate anti-reflective surfaces. Briefly, an optical surface can be made antireflective by "texturing" it with a nano-scale pattern to reduce the discontinuity in the index of refraction between the air and the bulk optical material. An array of cones, similar to the structure of a moth's eye, performs this way. Substrates are patterned using RML™ and etched to produce an array of cones with an aspect ratio of 3:1, which decreases the reflectivity below 0.1%.

  17. Progress in coherent lithography using table-top extreme ultraviolet lasers

    NASA Astrophysics Data System (ADS)

    Li, Wei

    interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography.

  18. Nanoparticles with tunable shape and composition fabricated by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Alayo, Nerea; Conde-Rubio, Ana; Bausells, Joan; Borrisé, Xavier; Labarta, Amilcar; Batlle, Xavier; Pérez-Murano, Francesc

    2015-11-01

    Cone-like and empty cup-shaped nanoparticles of noble metals have been demonstrated to provide extraordinary optical properties for use as optical nanoanntenas or nanoresonators. However, their large-scale production is difficult via standard nanofabrication methods. We present a fabrication approach to achieve arrays of nanoparticles with tunable shape and composition by a combination of nanoimprint lithography, hard-mask definition and various forms of metal deposition. In particular, we have obtained arrays of empty cup-shaped Au nanoparticles showing an optical response with distinguishable features associated with the excitations of localized surface plasmons. Finally, this route avoids the most common drawbacks found in the fabrication of nanoparticles by conventional top-down methods, such as aspect ratio limitation, blurring, and low throughput, and it can be used to fabricate nanoparticles with heterogeneous composition.

  19. Investigation of Glass Polycapillaries for Use in Proximity X-Ray Lithography.

    NASA Astrophysics Data System (ADS)

    Klotzko, Ira L.

    There is predicted growth of the micro-electronics industry in the 1990's and into the early 21^{st} century. In order for manufacturers of IC's to stay competitive in this vast global market, devices will have to be faster, more sophisticated, and more capable. According to the National Technology Roadmap for Semiconductors by The Semiconductor Industry Association (SIA), feature sizes in device structures are required to decrease in size in order for these goals to be realized. Presently, manufacturers use lithography with deep-ultra-violet (DUV) ^{1,2} wavelengths to produce circuit features of 0.30 μm and below. Because the wavelength of radiation used is of the same size as the features, diffraction phenomenon has become a limiting factor. Industry must therefore choose a new lithographic technique that can overcome the difficulties caused by these relatively large wavelengths. Although, some techniques have the ability to produce feature sizes of 0.2 μm and below, such as electron -beam lithography, ion-beam lithography, synchrotron-x-ray lithography, and even some optical techniques, they have not all developed an economically feasible method of mass producing device structures with a variety of geometries ^{3,4,5}. One such technique, point source x-ray lithography (PXRL), using considerably smaller wavelengths than those used by the current state of the art, could assist optical lithography in economically producing future generations of IC's. The characteristics of an x-ray field needed for x-ray lithography (XRL) is critically important to the manufacturing process. The beam must have control over the divergences produced by the finite-wafer-mask distance and the finite source size, the dose must be uniform throughout the field of exposure, the wavelength must be such as to prevent device damage and to maximize the interaction with the photo-resist, and there must be enough intensity to minimize exposure time. Point-source-x-ray-lithography system

  20. 90nm node contact hole patterning through applying model based OPC in KrF lithography

    NASA Astrophysics Data System (ADS)

    Jeon, Young-Doo; Lee, Sang-Uk; Choi, Jaeyoung; Kim, Jeahee; Han, Jaewon

    2008-03-01

    As semiconductor technologies move toward 90nm generation and below, contact hole is one of the most challenging features to print in the semiconductor manufacturing process. There are two principal difficulties in order to define small contact hole pattern on wafer. One is insufficient process margin besides poor resolution compared with line & space pattern. The other is that contact hole should be made through pitches and sometimes random contact hole pattern should be fabricated. Therefore advanced ArF lithography scanner should be used for small contact hole printing with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC(Optical Proximity Correction), PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), mask biasing and thermal flow. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest the method of contact holes patterning by using KrF lithography tool in 90nm sFlash(stand alone Flash)devices. For patterning of contact hole, we apply RETs which combine OAI and Model based OPC. Additionally, in this paper we present the result of hole pattern images which operate ArF lithography equipment. Also, this study describes comparison of two wafer images that ArF lithography process which is used mask biasing and Rule based OPC, KrF lithography process which is applied hybrid OPC.

  1. Double exposure technology for KrF lithography

    NASA Astrophysics Data System (ADS)

    Geisler, S.; Bauer, J.; Haak, U.; Stolarek, D.; Schulz, K.; Wolf, H.; Meier, W.; Trojahn, M.; Matthus, E.; Beyer, H.; Old, G.; Marschmeyer, St.; Kuck, B.

    2008-04-01

    The application of Double Exposure Lithography (DEL) would enlarge the capability of 248 nm exposure technique to smaller pitch. We will use the DEL for the integration of critical layers for dedicated applications requiring resolution enhancement into 0.13 μm BiCMOS technology. In this paper we present the overlay precision and the focus difference of 1st and 2nd exposure as critical parameters of the DEL for k I <= 0.3 lithography (100 nm half pitch) with binary masks (BIM). The realization of excellent overlay (OVL) accuracy is a main key of double exposure and double patterning techniques. We show the DEL requires primarily a good mask registration, when the wafer stays in the scanner for both exposures without alignment between 1st and 2nd exposure. The exposure tool overlay error is more a practical limit for double patterning lithography (DPL). Hence we prefer the DEL for the resolution enhancement, especially if we use the KrF high NA lithography tool for 130 nm generation. Experimental and simulated results show that the critical dimension uniformity (CDU) depends strongly on the overlay precision. The DEL results show CDU is not only affected by the OVL but also by an optical proximity effect of 1st and 2nd exposure and the mask registration. The CD uniformity of DEL demands a low focus difference between 1st and 2nd exposure and therefore requires a good focus repeatability of the exposure tool. The Depth of Focus (DOF) of 490 nm at stable CD of lines was achieved for DEL. If we change the focus of one of the exposures the CD-focus performance of spaces was reduced with simultaneous line position changing. CDU vs. focus difference between 1st and 2nd exposure demands a focus repeatability <100 nm for the exposure tool. Summary, the results show DEL has the potential to be a practical lithography enhancement method for device fabrication using high NA KrF tool generation.

  2. ArF excimer laser microprocessing of polymer optical fibers for photonic sensor applications

    NASA Astrophysics Data System (ADS)

    Athanasekos, Loukas; Vasileiadis, Miltiadis; El Sachat, Alexandros; Vainos, Nikolaos A.; Riziotis, Christos

    2015-01-01

    A study of polymer optical fiber microstructuring by use of deep ultraviolet excimer laser radiation at 193 nm wavelength is performed. The ablation characteristics of the fiber cladding and core materials are analyzed comparatively. The laser irradiation effects are dynamically studied by on-line monitoring of the laser ablation induced waveguiding losses, the latter being correlated with the spatial structuring parameters. The fiber surface is modified to incorporate cavities, which are subsequently employed as sensitive material receptors for the development of customized photonic sensors. The sensing capability of the microstructured plastic optical fibers is demonstrated by ammonia and humidity detection.

  3. Compact multi-bounce projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2002-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four optical elements providing five reflective surfaces for projecting a mask image onto a substrate. The five optical surfaces are characterized in order from object to image as concave, convex, concave, convex and concave mirrors. The second and fourth reflective surfaces are part of the same optical element. The optical system is particularly suited for ring field step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width, which effectively minimizes dynamic distortion.

  4. Automatic layout feature extraction for lithography hotspot detection based on deep neural network

    NASA Astrophysics Data System (ADS)

    Matsunawa, Tetsuaki; Nojima, Shigeki; Kotani, Toshiya

    2016-03-01

    Lithography hotspot detection in the physical verification phase is one of the most important techniques in today's optical lithography based manufacturing process. Although lithography simulation based hotspot detection is widely used, it is also known to be time-consuming. To detect hotspots in a short runtime, several machine learning based methods have been proposed. However, it is difficult to realize highly accurate detection without an increase in false alarms because an appropriate layout feature is undefined. This paper proposes a new method to automatically extract a proper layout feature from a given layout for improvement in detection performance of machine learning based methods. Experimental results show that using a deep neural network can achieve better performance than other frameworks using manually selected layout features and detection algorithms, such as conventional logistic regression or artificial neural network.

  5. Direct write lithography: the global solution for R&D and manufacturing

    NASA Astrophysics Data System (ADS)

    Pain, Laurent; Tedesco, Serge; Constancias, Christophe

    2006-10-01

    The electron beam lithography is a well known and mature solution, widely installed in research laboratories and Universities, to provide advanced patterning for research and development programs for a large field of applications. However, limited by its low throughput capabilities, the direct write solution never appeared as a credible option for manufacturing purposes. Nevertheless, semiconductor business starts to be affected by the increasing cost of the optical lithography requesting more and more complex masks and projection systems. This trend opens opportunities for high throughput mask less equipments to address ASIC manufacturing. A review of the Maskless Lithography (ML2) technology is presented in this article, including process integration capability, application fields and perspective for high throughput ML2 solution. To cite this article: L. Pain et al., C. R. Physique 7 (2006).

  6. MAGIC: a European program to push the insertion of maskless lithography

    NASA Astrophysics Data System (ADS)

    Pain, L.; Icard, B.; Tedesco, S.; Kampherbeek, B.; Gross, G.; Klein, C.; Loeschner, H.; Platzgummer, E.; Morgan, R.; Manakli, S.; Kretz, J.; Holhe, C.; Choi, K.-H.; Thrum, F.; Kassel, E.; Pilz, W.; Keil, K.; Butschke, J.; Irmscher, M.; Letzkus, F.; Hudek, P.; Paraskevopoulos, A.; Ramm, P.; Weber, J.

    2008-03-01

    With the willingness of the semiconductor industry to push manufacturing costs down, the mask less lithography solution represents a promising option to deal with the cost and complexity concerns about the optical lithography solution. Though a real interest, the development of multi beam tools still remains in laboratory environment. In the frame of the seventh European Framework Program (FP7), a new project, MAGIC, started January 1st 2008 with the objective to strengthen the development of the mask less technology. The aim of the program is to develop multi beam systems from MAPPER and IMS nanofabrication technologies and the associated infrastructure for the future tool usage. This paper draws the present status of multi beam lithography and details the content and the objectives of the MAGIC project.

  7. Nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Hanabata, Makoto

    2015-03-01

    Newly eco-friendly high light transparency film with plant-based materials was investigated to future development of liquid crystal displays and optical devices with water repellency as a chemical design concept of nanoimprint lithography. This procedure is proven to be suitable for material design and the process conditions of ultraviolet curing nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency. The developed formulation of advanced nanoimprinted materials design derived from lactulose and psicose, and the development of suitable UV nanoimprint conditions produced high resolutions of the conical shaped moth-eye regularly-nanostructure less than approximately 200 nm diameter, and acceptable patterning dimensional accuracy by the replication of 100 times of UV nanoimprint lithography cycles. The newly plant-based materials and the process conditions are expected as one of the defect less nanoimprint lithographic technologies in next generation electronic devices.

  8. Reaching the theoretical resonance quality factor limit in coaxial plasmonic nanoresonators fabricated by helium ion lithography.

    PubMed

    Melli, M; Polyakov, A; Gargas, D; Huynh, C; Scipioni, L; Bao, W; Ogletree, D F; Schuck, P J; Cabrini, S; Weber-Bargioni, A

    2013-06-12

    Optical antenna structures have revolutionized the field of nano-optics by confining light to deep subwavelength dimensions for spectroscopy and sensing. In this work, we fabricated coaxial optical antennae with sub-10-nanometer critical dimensions using helium ion lithography (HIL). Wavelength dependent transmission measurements were used to determine the wavelength-dependent optical response. The quality factor of 11 achieved with our HIL fabricated structures matched the theoretically predicted quality factor for the idealized flawless gold resonators calculated by finite-difference time-domain (FDTD). For comparison, coaxial antennae with 30 nm critical dimensions were fabricated using both HIL and the more common Ga focus ion beam lithography (Ga-FIB). The quality factor of the Ga-FIB resonators was 60% of the ideal HIL results for the same design geometry due to limitations in the Ga-FIB fabrication process.

  9. Extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  10. Neutral atom lithography with metastable helium

    NASA Astrophysics Data System (ADS)

    Allred, Claire Shean

    In this dissertation we describe our performance of resist assisted neutral atom lithography using a bright beam of metastable 23S1 Helium (He*). Metastable Helium atoms have 20 eV of internal energy making them easy to detect and able to destroy a resist. The He* is produced by a reverse flow DC discharge source and then collimated with the bichromatic force, followed by three optical molasses velocity compression stages. The atoms in the resulting beam have a mean longitudinal velocity of 1125 m/s and a divergence of 1.1 mrad. The typical beam flux is 2 x 109 atoms/mm2s through a 0.1mm diameter aperture 70 cm away from the source. The internal energy of the atoms damages the molecules of a self assembled monolayer (SAM) of nonanethiol. The undisturbed SAM protects a 200 A layer of gold that has been evaporated onto a prepared Silicon wafer from a wet chemical etch. Two methods are used to pattern the He* atoms before they destroy the SAM. First, a Nickel micro mesh was used to protect the SAM. These experiments established an appropriate dosage and etch time for patterning. The samples were analyzed with an atomic force microscope and found to have an edge resolution of 63 nm. Then, patterning was accomplished using the dipole force the atoms experience while traversing a standing wave of lambda = 1083nm light tuned 500MHz below the 23S 1 → 23P2 transition. Depending on the intensity of the light, the He* atoms are focused or channeled into lines separated by lambda/2. The lines cover the entire exposed length of the substrate, about 3 mm. They are about 3 mm long, corresponding to about twice the beam waist of the laser standing wave. Thus there are 6 x 10 3 lines of length 5500lambda. These results agree with our numerical simulations of the experiment.

  11. Double-Sided Opportunities Using Chemical Lift-Off Lithography.

    PubMed

    Andrews, Anne M; Liao, Wei-Ssu; Weiss, Paul S

    2016-08-16

    We discuss the origins, motivation, invention, development, applications, and future of chemical lift-off lithography, in which a specified pattern of a self-assembled monolayer is removed, i.e., lifted off, using a reactive, patterned stamp that is brought into contact with the monolayer. For Au substrates, this process produces a supported, patterned monolayer of Au on the stamp in addition to the negative pattern in the original molecular monolayer. Both the patterned molecular monolayer on the original substrate and the patterned supported metal monolayer on the stamp are useful as materials and for further applications in sensing and other areas. Chemical lift-off lithography effectively lowers the barriers to and costs of high-resolution, large-area nanopatterning. On the patterned monolayer side, features in the single-nanometer range can be produced across large (square millimeter or larger) areas. Patterns smaller than the original stamp feature sizes can be produced by controlling the degree of contact between the stamp and the lifted-off monolayer. We note that this process is different than conventional lift-off processes in lithography in that chemical lift-off lithography removes material, whereas conventional lift-off is a positive-tone patterning method. Chemical lift-off lithography is in some ways similar to microtransfer printing. Chemical lift-off lithography has critical advantages in the preparation of biocapture surfaces because the molecules left behind are exploited to space and to orient functional(ized) molecules. On the supported metal monolayer side, a new two-dimensional material has been produced. The useful important chemical properties of Au (vis-à-vis functionalization with thiols) are retained, but the electronic and optical properties of bulk Au or even Au nanoparticles are not. These metal monolayers do not quench excitation and may be useful in optical measurements, particularly in combination with selective binding due to

  12. Tuning and Freezing Disorder in Photonic Crystals using Percolation Lithography

    PubMed Central

    Burgess, Ian B.; Abedzadeh, Navid; Kay, Theresa M.; Shneidman, Anna V.; Cranshaw, Derek J.; Lončar, Marko; Aizenberg, Joanna

    2016-01-01

    Although common in biological systems, synthetic self-assembly routes to complex 3D photonic structures with tailored degrees of disorder remain elusive. Here we show how liquids can be used to finely control disorder in porous 3D photonic crystals, leading to complex and hierarchical geometries. In these optofluidic crystals, dynamically tunable disorder is superimposed onto the periodic optical structure through partial wetting or evaporation. In both cases, macroscopic symmetry breaking is driven by subtle sub-wavelength variations in the pore geometry. These variations direct site-selective infiltration of liquids through capillary interactions. Incorporating cross-linkable resins into our liquids, we developed methods to freeze in place the filling patterns at arbitrary degrees of partial wetting and intermediate stages of drying. These percolation lithography techniques produced permanent photonic structures with adjustable disorder. By coupling strong changes in optical properties to subtle differences in fluid behavior, optofluidic crystals may also prove useful in rapid analysis of liquids. PMID:26790372

  13. Nanoimprint Lithography on curved surfaces prepared by fused deposition modelling

    NASA Astrophysics Data System (ADS)

    Köpplmayr, Thomas; Häusler, Lukas; Bergmair, Iris; Mühlberger, Michael

    2015-06-01

    Fused deposition modelling (FDM) is an additive manufacturing technology commonly used for modelling, prototyping and production applications. The achievable surface roughness is one of its most limiting aspects. It is however of great interest to create well-defined (nanosized) patterns on the surface for functional applications such as optical effects, electronics or bio-medical devices. We used UV-curable polymers of different viscosities and flexible stamps made of poly(dimethylsiloxane) (PDMS) to perform Nanoimprint Lithography (NIL) on FDM-printed curved parts. Substrates with different roughness and curvature were prepared using a commercially available 3D printer. The nanoimprint results were characterized by optical light microscopy, profilometry and atomic force microscopy (AFM). Our experiments show promising results in creating well-defined microstructures on the 3D-printed parts.

  14. Holographic illuminator for synchrotron-based projection lithography systems

    DOEpatents

    Naulleau, Patrick P.

    2005-08-09

    The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

  15. Soft x-ray reduction camera for submicron lithography

    DOEpatents

    Hawryluk, A.M.; Seppala, L.G.

    1991-03-26

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

  16. Soft x-ray reduction camera for submicron lithography

    DOEpatents

    Hawryluk, Andrew M.; Seppala, Lynn G.

    1991-01-01

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

  17. EFFECT OF LASER LIGHT ON MATTER. LASER PLASMAS: Optical breakdown of quartz glass by XeF laser radiation

    NASA Astrophysics Data System (ADS)

    Amosov, A. V.; Barabanov, V. S.; Gerasimov, S. Yu; Morozov, Nikolai V.; Sergeev, P. B.; Stepanchuk, V. N.

    1994-04-01

    The bulk optical strengths of KU1 and KUVI quartz glasses were determined for pulses of 85 ns duration at the wavelength of 353 nm. The damage thresholds of these materials were the same and amounted to 280 GW cm-2. The optical breakdown thresholds of KU1 at λ = 248 nm and λ = 193 nm, obtained earlier for the same samples under otherwise identical conditions, were used together with the present results to plot the wavelength dependence of the damage threshold of this material. These results showed that nonlinear absorption is the main mechanism responsible for damage to quartz glass in high-intensity ultraviolet laser radiation fields.

  18. Efficient modeling of immersion lithography in an aggressive RET mask synthesis flow

    NASA Astrophysics Data System (ADS)

    Bai, Min; Lei, Junjiang; Zhang, Lin; Shiely, James P.

    2005-06-01

    Immersion lithography has been accepted as the major breakthrough for enabling next generation deep subwavelength chip production. As it extends the resolution capability of optical lithography to the next technology node, it brings fresh challenges to resolution enhancement techniques (RET). Accurate lithography modeling becomes even more critical for RET at the sub-65nm nodes. On the other hand, immersion models need to be fully compatible within the context of existing optical proximity correction (OPC) flow. With the hyper NA approach, modeling of immersion lithography requires full vector treatment of the electric fields in the propagating light wave. We developed a comprehensive vector model that considers not only the plane wave decomposition from the mask to the wafer plane, but also the light propagation through a thin film stack on the wafer. With the integration of this model into Synopsys OPC modeling tool ProGen, we have simulated and demonstrated several important enhancements introduced by immersion. In the mean time, the modeling and correction flow for immersion is completely compatible with the current OPC infrastructure.

  19. Multi-shaped beam: development status and update on lithography results

    NASA Astrophysics Data System (ADS)

    Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

    2011-04-01

    According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2, 3]. In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3, 5, 6]. Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].

  20. Data sharing system for lithography APC

    NASA Astrophysics Data System (ADS)

    Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

    2007-03-01

    We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

  1. Lithography oriented DfM for 65 nm and beyond

    NASA Astrophysics Data System (ADS)

    Kyoh, S.; Kotani, T.; Kobayashi, S.; Ikeuchi, A.; Inoue, S.

    2006-03-01

    As Technology node is advancing, we are forced to use relatively low resolution lithography tool. And these situation results in degradation of pattern fidelity. hot spot, lithographic margin-less spot, appears frequently by conventional design rule methodology. We propose two design rule methodology to manage hot spot appearances in the stage of physical pattern determination. One is restricted design rule, under which pattern variation is very limited, so hot spot generation can be fully controlled. Second is complex design rule combined with lithography compliance check (LCC) and hot spot fixing (HSF). Design rule, by itself, has a limited ability to reduce hot spot generation. To compensate the limited ability, both LCC including optical proximity correction and process simulation for detecting hot spots and HSF for fixing the detected hot spots are required. Implementing those methodology into design environment, hot spot management can be done by early stage of physical pattern determination. Also newly developed tool is introduced to help designers easily fixing hot spots. By using this tool, the system of automatic LCC and HSF has been constructed. hot spots-less physical patterns through this system can be easily obtained and turn-back from manufacture to design can be avoided.

  2. Scatterometry-based process control for nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Asano, Masafumi; Tsuda, Hirotaka; Komori, Motofumi; Matsuki, Kazuto; Abe, Hideaki; Jung, Woo-Yung

    2016-03-01

    In principal, the critical dimension (CD) of Nanoimprint lithography (NIL) pattern is determined by the CD of the template pattern. Unless one template is changed to another, NIL does not have a knob for direct control of the CD, such as the exposure dose and focus in optical lithography. Alternatively, the CD would be controlled by adjusting the thickness of the residual layer underneath the NIL pattern and controlling the etching process to transfer the pattern to a substrate. Controlling the residual layer thickness (RLT) can change the etching bias, resulting in the control of the CD of etched pattern. RLT is controllable by the resist dispense condition of the inkjet. For CD control, the metrology of RLT and feedback of the results to the dispense condition are extremely important. Scatterometry is the most promising metrology for the task because it is nondestructive 3D metrology with high throughput. In this paper, we discuss how to control CD in the NIL process and propose a process control flow based on scatterometry.

  3. Large area patterning using interference and nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Bläsi, B.; Tucher, N.; Höhn, O.; Kübler, V.; Kroyer, T.; Wellens, Ch.; Hauser, H.

    2016-04-01

    Interference lithography (IL) is the best suited technology for the origination of large area master structures with high resolution. In prior works, we seamlessly pattern areas of up to 1.2 x 1.2 m2 with periodic features, i.e. a diffraction grating with a period in the micron range. For this process we use an argon ion laser emitting at 363.8 nm. Thus, feasible periods are in the range of 100 μm to 200 nm. Edge-defined techniques or also called (self-aligned) double patterning processes can be used to double the spatial frequency of such structures. This way, we aim to reduce achievable periods further down to 100 nm. In order to replicate master structures, we make use of nanoimprint lithography (NIL) processes. In this work, we present results using IL as mastering and NIL as replication technology in the fields of photovoltaics as well as display and lighting applications. In photovoltaics different concepts like the micron-scale patterning of the front side as well as the realization of rear side diffraction gratings are presented. The benefit for each is shown on final device level. In the context of display and lighting applications, we realized various structures ranging from designed, symmetric or asymmetric, diffusers, antireflective and/or antiglare structures, polarization optical elements (wire grid polarizers), light guidance and light outcoupling structures.

  4. High efficiency diffraction grating for EUV lithography beamline monochromator

    NASA Astrophysics Data System (ADS)

    Voronov, D. L.; Warwick, T.; Gullikson, E. M.; Salmassi, F.; Naulleau, P.; Artemiev, N. A.; Lum, P.; Padmore, H. A.

    2016-09-01

    A blazed diffraction grating for the EUV lithography Beamline 12.0.1 of the Advanced Light Source has been fabricated using optical direct write lithography and anisotropic wet etching technology. A variable line spacing pattern was recorded on a photoresist layer and transferred to a hard mask layer of the grating substrate by a plasma etch. Then anisotropic wet etching was applied to shape triangular grating grooves with precise control of the ultralow blaze angle. Variation of the groove density along the grating length was measured with a Long Trace Profiler (LTP). Fourier analysis of the LTP data confirmed high groove placement accuracy of the grating. The grating coated with a Ru coating demonstrated diffraction efficiency of 69.6% in the negative first diffraction order which is close to theoretical efficiency at the wavelength of 13.5 nm. This work demonstrates an alternative approach to fabrication of highly efficient and precise x-ray diffraction gratings with ultra-low blaze angles.

  5. System considerations for maskless lithography

    NASA Astrophysics Data System (ADS)

    Karnowski, Thomas; Joy, David; Allard, Larry; Clonts, Lloyd

    2004-05-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting prblems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-ofrf switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devidces are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  6. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  7. Simple method for measuring acid generation quantum efficiency at 193 nm

    NASA Astrophysics Data System (ADS)

    Szmanda, Charles R.; Kavanagh, Robert J.; Bohland, John F.; Cameron, James F.; Trefonas, Peter, III; Blacksmith, Robert F.

    1999-06-01

    Traditional methods of measuring the Dill C Parameter involve monitoring the absorbance of a resist as a function of exposure. In chemically amplified resist, absorbance changes with exposure are small and frequently have little correlation to the amount of photoacid generated.

  8. Photolysis of solid NH3 and NH3-H2O mixtures at 193 nm

    NASA Astrophysics Data System (ADS)

    Loeffler, M. J.; Baragiola, R. A.

    2010-12-01

    We have studied UV photolysis of solid ammonia and ammonia-dihydrate samples at 40 K, using infrared spectroscopy, mass spectrometry, and microgravimetry. We have shown that in the pure NH3 sample, the main species ejected are NH3, H2, and N2, where the hydrogen and nitrogen increase with laser fluence. This increase in N2 ejection with laser fluence explains the increase in mass loss rate detected by a microbalance. In contrast, for the ammonia-water mixture, we see very weak signals of H2 and N2 in the mass spectrometer, consistent with the very small mass loss during the experiment and with a <5% decrease in the NH3 infrared absorption bands spectroscopy after a fluence of ˜3 × 1019 photons/cm2. The results imply that ammonia-ice mixtures in the outer solar system are relatively stable under solar irradiation.

  9. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOEpatents

    Cohen, Simon J; Jeong, Hwan J; Shafer, David R

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  10. Using Lithography to Integrate Optoelectronic and Optofluidic Nanodevices into Systems - and Commercial Products

    NASA Astrophysics Data System (ADS)

    Scherer, Axel

    2010-03-01

    Lithography has fueled the trend towards ever-smaller and denser electronic integration over the past 50 years. Gordon Moore observed in the 1960s the trend towards increased electronic complexity and functionality within an area of a silicon chip, resulting from a relatively constant real-estate price and the cost of moving information from one chip to another The opportunity of highly accurate definition of microdevices and their precise alignment on top of each other by lithography also holds tremendous promise for increasing the complexity and functionality of optical, fluidic, and magnetic systems. Data communications has recently adopted the intimate integration of optics and electronics within silicon photonics chips. Useful medical diagnosis tools can be constructed through integration of electronics, optics and fluidics. Indeed, biomedical devices today can be constructed using two- and three-dimensional soft and hard lithography approaches, in which pico-Liter volumes can be manipulated and analyzed on optofluidic chips. In the near future, we can expect the emergence of lithographically integration of optics, fluidics and electronics for many other commercial applications. Here, a very subjective and biased view of the evolution of optofluidics and silicon photonics from concepts in the laboratory to commercial products will be presented. This talk will also emphasize future technological opportunities as well as pitfalls in the journey from laboratory devices to commercial systems.

  11. Liquid-Phase Beam Pen Lithography.

    PubMed

    He, Shu; Xie, Zhuang; Park, Daniel J; Liao, Xing; Brown, Keith A; Chen, Peng-Cheng; Zhou, Yu; Schatz, George C; Mirkin, Chad A

    2016-02-24

    Beam pen lithography (BPL) in the liquid phase is evaluated. The effect of tip-substrate gap and aperture size on patterning performance is systematically investigated. As a proof-of-concept experiment, nanoarrays of nucleotides are synthesized using BPL in an organic medium, pointing toward the potential of using liquid phase BPL to perform localized photochemical reactions that require a liquid medium.

  12. Mask manufacturing of advanced technology designs using multi-beam lithography (Part 1)

    NASA Astrophysics Data System (ADS)

    Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

    2016-10-01

    As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking Sub-Resolution Assist Features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, we study one such process, characterizing mask manufacturing capability of 10nm and below structures with particular focus on minimum resolution and pattern fidelity.

  13. Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)

    NASA Astrophysics Data System (ADS)

    Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

    2016-09-01

    As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking sub-resolution assist features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, Part 2 of our study, we further characterize an MBMW process for 10nm and below logic node mask manufacturing including advanced pattern analysis and write time demonstration.

  14. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography

    SciTech Connect

    Moore, Jayven S.; Xantheas, Sotiris S.; Grate, Jay W.; Wietsma, Thomas W.; Gratton, Enrico; Vasdekis, Andreas

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL’s impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 4-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL’s modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  15. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography.

    PubMed

    Moore, J S; Xantheas, S S; Grate, J W; Wietsma, T W; Gratton, E; Vasdekis, A E

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL's impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 2-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a substantially high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL's modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  16. "Sketch and Peel" Lithography for High-Resolution Multiscale Patterning.

    PubMed

    Chen, Yiqin; Xiang, Quan; Li, Zhiqin; Wang, Yasi; Meng, Yuhan; Duan, Huigao

    2016-05-11

    We report a unique lithographic process, termed "Sketch and Peel" lithography (SPL), for fast, clean, and reliable patterning of metallic structures from tens of nanometers to submillimeter scale using direct writing technology. The key idea of SPL process is to define structures using their presketched outlines as the templates for subsequent selective peeling of evaporated metallic layer. With reduced exposure area, SPL process enables significantly improved patterning efficiency up to hundreds of times higher and greatly mitigated proximity effect compared to current direct writing strategy. We demonstrate that multiscale hierarchical metallic structures with arbitrary shapes and minimal feature size of ∼15 nm could be defined with high fidelity using SPL process for potential nanoelectronic and nano-optical applications.

  17. Solvent immersion nanoimprint lithography of fluorescent conjugated polymers

    NASA Astrophysics Data System (ADS)

    Whitworth, G. L.; Zhang, S.; Stevenson, J. R. Y.; Ebenhoch, B.; Samuel, I. D. W.; Turnbull, G. A.

    2015-10-01

    Solvent immersion imprint lithography (SIIL) was used to directly nanostructure conjugated polymer films. The technique was used to create light-emitting diffractive optical elements and organic semiconductor lasers. Gratings with lateral features as small as 70 nm and depths of ˜25 nm were achieved in poly(9,9-dioctylfluorenyl-2,7-diyl). The angular emission from the patterned films was studied, comparing measurement to theoretical predictions. Organic distributed feedback lasers fabricated with SIIL exhibited thresholds for lasing of ˜40 kW/cm2, similar to those made with established nanoimprint processes. The results show that SIIL is a quick, convenient and practical technique for nanopatterning of polymer photonic devices.

  18. Development of CMOS-compatible membrane projection lithography

    NASA Astrophysics Data System (ADS)

    Burckel, D. Bruce; Samora, Sally; Wiwi, Mike; Wendt, Joel R.

    2013-09-01

    Recently we have demonstrated membrane projection lithography (MPL) as a fabrication approach capable of creating 3D structures with sub-micron metallic inclusions for use in metamaterial and plasmonic applications using polymer material systems. While polymers provide several advantages in processing, they are soft and subject to stress-induced buckling. Furthermore, in next generation active photonic structures, integration of photonic components with CMOS electronics is desirable. While the MPL process flow is conceptually simple, it requires matrix, membrane and backfill materials with orthogonal processing deposition/removal chemistries. By transitioning the MPL process flow into an entirely inorganic material set based around silicon and standard CMOS-compatible materials, several elements of silicon microelectronics can be integrated into photonic devices at the unit-cell scale. This paper will present detailed fabrication and characterization data of these materials, emphasizing the processing trade space as well as optical characterization of the resulting structures.

  19. Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography.

    PubMed

    Tarrio, Charles; Grantham, Steven; Squires, Matthew B; Vest, Robert E; Lucatorto, Thomas B

    2003-01-01

    Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer extreme-ultraviolet stepper mirrors require the highest attainable reflectivity at 13 nm (nearly 70 %), but the central wavelength of the reflectivity of these mirrors must be measured with a wavelength repeatability of 0.001 nm and the peak reflectivity of the reflective masks with a repeatability of 0.12 %. We report on two upgrades of our NIST/DARPA Reflectometry Facility that have given us the ability to achieve 0.1 % repeatability and 0.3 % absolute uncertainty in our reflectivity measurements. A third upgrade, a monochromator with thermal and mechanical stability for improved wavelength repeatability, is currently in the design phase.

  20. Sub-100-nm trackwidth development by e-beam lithography for advanced magnetic recording heads

    NASA Astrophysics Data System (ADS)

    Chang, Jei-Wei; Chen, Chao-Peng

    2006-03-01

    Although semiconductor industry ramps the products with 90 nm much quicker than anticipated [1], magnetic recording head manufacturers still have difficulties in producing sub-100 nm read/write trackwidth. Patterning for high-aspectratio writer requires much higher depth of focus (DOF) than most advanced optical lithography, including immersion technique developed recently [2]. Self-aligning reader with its stabilized bias requires a bi-layer lift-off structure where the underlayer is narrower than the top image layer. As the reader's trackwidth is below 100nm, the underlayer becomes very difficult to control. Among available approaches, e-beam lithography remains the most promising one to overcome the challenge of progressive miniaturization. In this communication, the authors discussed several approaches using ebeam lithography to achieve sub-100 nm read/write trackwidth. Our studies indicated the suspended resist bridge design can not only widen the process window for lift-off process but also makes 65 nm trackwidth feasible to manufacture. Necked dog-bone structure seems to be the best design in this application due to less proximity effects from adjacent structures and minimum blockages for ion beam etching. The trackwidth smaller than 65 nm can be fabricated via the combination of e-beam lithography with auxiliary slimming and/or trimming. However, deposit overspray through undercut becomes dominated in such a small dimension. To minimize the overspray, the effects of underlayer thickness need to be further studied.

  1. Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

    SciTech Connect

    Li, Li E-mail: wangz@cust.edu.cn Zhang, Ziang; Yu, Miao; Song, Zhengxun; Weng, Zhankun; Wang, Zuobin E-mail: wangz@cust.edu.cn Li, Wenjun; Wang, Dapeng; Zhao, Le; Peng, Kuiqing E-mail: wangz@cust.edu.cn

    2015-09-28

    Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ{sub 0} = 1064 nm. The minimal feature size is only several nanometers (sub λ{sub 0}/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser.

  2. Thick silicon membranes as mask blank for SU-8 x-ray deep lithography

    NASA Astrophysics Data System (ADS)

    Maia, Izaque A.; Ferreira, Luis O. S.; Piazzetta, Maria Helena O.; Natal, Graziele C.

    2001-08-01

    Home made masks having thick (35-50 micrometers ) silicon membranes as blanks were used in deep X-ray lithography of SU8 - a negative tone photoresist. X-ray masks were fabricated by the following sequence of steps: (a) vacuum deposition of Ti and Au thin layers on a 220 micrometers thick (100) silicon wafer, (b) optical lithography of two different patterns in both negative (SU-8) or positive (AZ4620) photoresist (c) gold electroforming and (d) silicon substrate thinning with KOH etch to form the membrane. X-ray exposures was performed in the X-ray beam line of the LNLS synchrotron light source. The samples consisted of 125 micrometers thick layers of SU-8 supported on silicon and assorted substrates. The optimum dose for silicon substrates have been used in the remaining substrates, namely, metallic thin films (Cr, Cu, Au, Pt), printed circuit board (PCB), quartz, alumina ceramic and glass. The influence of mask defects, substrate type and X-ray dose values on the lithography of SU-8 is discussed. Criteria for defining upper and lower dose values for SU-8 X-ray deep lithography was proposed on the basis of characteristic defects. Advantages in using SU-8 rather than PMMA in the LIGA technology are commented.

  3. Maskless lithography using point array technique for fine patterns

    NASA Astrophysics Data System (ADS)

    Nakajima, Fumitaka; Ohta, Eiji; Nakagawa, Takashi; Tachikawa, Masahiro; Takeda, Nobuo; Nishimoto, Nirou

    2015-07-01

    We made a steady progress in designing a maskless exposure system using the point array technique. An epoch-making high-resolution maskless lithography system with resolution of less than 1 micron half-pitch has been developed. Exposure results indicated that patterns were resolved up to 0.8 microns half-pitch. Smooth edges of the photoresist for various directions were also confirmed. It is distinctive characteristics of the point array technique. Another merit is coexistence of high resolution and high throughput. 4 inches wafers used in this evaluation were exposed within 30 minutes. Therefore, we consider that tact time of manufacturing a photomask can be shortened drastically. Finally we have challenged to apply an annular stop to our new projection optics system in order to achieve further improvement of optical performance. However, we confirmed that a sidelobe of optical spots, which became stronger by using the annular stop, exerted an undesirable influence upon imaging for fine patterns. Consequently, it became clear that suppressing the sidelobe as well as narrowing the mainlobe of optical spots is important for microlithography using the point array technique.

  4. Soft molding lithography of conjugated polymers

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Persano, Luana; Cingolani, Roberto; Gigli, Giuseppe; Babudri, Francesco; Farinola, Gianluca M.; Naso, Francesco

    2004-02-01

    We report on the nanopatterning of conjugated polymers by soft molding, and exploit the glass transition of the organic compound in conformal contact with an elastomeric element. We succeeded in printing different compounds with resolution down to 300 nm at temperatures up to 300 °C in vacuum. No significant variation of the photoluminescence (PL) spectra nor heavy degradation of the PL quantum yield was observed after the lithography process. Based on the high resolution achieved and on the well-retained luminescence properties of the patterned compounds, we conclude that high-temperature soft lithography is a valid, flexible and straightforward technique for one-step realization of organic-based devices.

  5. Implementation of assist features in EUV lithography

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

    2015-03-01

    The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

  6. Maskless Plasmonic Lithography at 22 nm Resolution

    PubMed Central

    Pan, Liang; Park, Yongshik; Xiong, Yi; Ulin-Avila, Erick; Wang, Yuan; Zeng, Li; Xiong, Shaomin; Rho, Junsuk; Sun, Cheng; Bogy, David B.; Zhang, Xiang

    2011-01-01

    Optical imaging and photolithography promise broad applications in nano-electronics, metrologies, and single-molecule biology. Light diffraction however sets a fundamental limit on optical resolution, and it poses a critical challenge to the down-scaling of nano-scale manufacturing. Surface plasmons have been used to circumvent the diffraction limit as they have shorter wavelengths. However, this approach has a trade-off between resolution and energy efficiency that arises from the substantial momentum mismatch. Here we report a novel multi-stage scheme that is capable of efficiently compressing the optical energy at deep sub-wavelength scales through the progressive coupling of propagating surface plasmons (PSPs) and localized surface plasmons (LSPs). Combining this with airbearing surface technology, we demonstrate a plasmonic lithography with 22 nm half-pitch resolution at scanning speeds up to 10 m/s. This low-cost scheme has the potential of higher throughput than current photolithography, and it opens a new approach towards the next generation semiconductor manufacturing. PMID:22355690

  7. Atom lithography with metastable helium

    SciTech Connect

    Allred, Claire S.; Reeves, Jason; Corder, Christopher; Metcalf, Harold

    2010-02-15

    A bright metastable helium (He*) beam is collimated sequentially with the bichromatic force and three optical molasses velocity compression stages. Each He* atom in the beam has 20 eV of internal energy that can destroy a molecular resist assembled on a gold coated silicon wafer. Patterns in the resist are imprinted onto the gold layer with a standard selective etch. Patterning of the wafer with the He{sup *} was demonstrated with two methods. First, a mesh was used to protect parts of the wafer making an array of grid lines. Second, a standing wave of {lambda}=1083 nm light was used to channel and focus the He* atoms into lines separated by {lambda}/2. The patterns were measured with an atomic force microscope establishing an edge resolution of 80 nm. Our results are reliable and repeatable.

  8. Formation of Magnetic Anisotropy by Lithography

    PubMed Central

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2–0.3 erg/cm2 for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  9. Fabrication of anisotropically arrayed nano-slots metasurfaces using reflective plasmonic lithography

    NASA Astrophysics Data System (ADS)

    Luo, Jun; Zeng, Bo; Wang, Changtao; Gao, Ping; Liu, Kaipeng; Pu, Mingbo; Jin, Jinjin; Zhao, Zeyu; Li, Xiong; Yu, Honglin; Luo, Xiangang

    2015-11-01

    Nanofabrication technology with high-resolution, high-throughput and low-cost is essential for the development of nanoplasmonic and nanophotonic devices. At present, most metasurfaces are fabricated in a point by point writing manner with electron beam lithography or a focused ion beam, which imposes a serious cost barrier with respect to practical applications. Near field optical lithography, seemingly providing a high-resolution and low-cost way, however, suffers from the ultra shallow depth and poor fidelity of obtained photoresist patterns due to the exponential decay feature of evanescent waves. Here, we propose a method of surface plasmonic imaging lithography by introducing a reflective plasmonic lens to amplify and compensate evanescent waves, resulting in the production of nano resist patterns with high fidelity, contrast and enhanced depth beyond that usually obtained by near field optical lithography. As examples, a discrete and anisotropically arrayed nano-slots mask pattern with different orientations and a size of 40 nm × 120 nm could be imaged in photoresist and transferred successfully onto a metal layer through an etching process. Evidence for the pattern quality is given by virtue of the fabricated metasurface lens devices showing good focusing performance in experiments. It is believed that this method provides a parallel, low-cost, high-throughput and large-area nanofabrication route for fabricating nanostructures of holograms, vortex phase plates, bio-sensors and solar cells etc.Nanofabrication technology with high-resolution, high-throughput and low-cost is essential for the development of nanoplasmonic and nanophotonic devices. At present, most metasurfaces are fabricated in a point by point writing manner with electron beam lithography or a focused ion beam, which imposes a serious cost barrier with respect to practical applications. Near field optical lithography, seemingly providing a high-resolution and low-cost way, however, suffers

  10. Overlay distortions in wafer-scale integration lithography

    NASA Astrophysics Data System (ADS)

    Flack, Warren W.

    1993-08-01

    Wafer scale integration (WSI) lithography is the technique used to fabricate ultra large scale integration (ULSI) integrated circuits significantly greater in size than current products. Applications for WSI lithography include large solid state detector arrays, large area liquid crystal displays, high speed mainframe supercomputers, and large random access memories. The lithography technology required to manufacture these devices is particularly challenging, requiring stringent control of both submicron critical dimensions and accurate alignment of level to level device patterns over large chip areas.

  11. Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography

    NASA Astrophysics Data System (ADS)

    Madey, Theodore E.; Faradzhev, Nadir S.; Yakshinskiy, Boris V.; Edwards, N. V.

    2006-12-01

    One of the most promising methods for next generation device manufacturing is extreme ultraviolet (EUV) lithography, which uses 13.5 nm wavelength radiation generated from freestanding plasma-based sources. The short wavelength of the incident illumination allows for a considerable decrease in printed feature size, but also creates a range of technological challenges not present for traditional optical lithography. Contamination and oxidation form on multilayer reflecting optics surfaces that not only reduce system throughput because of the associated reduction in EUV reflectivity, but also introduce wavefront aberrations that compromise the ability to print uniform features. Capping layers of ruthenium, films ˜2 nm thick, are found to extend the lifetime of Mo/Si multilayer mirrors used in EUV lithography applications. However, reflectivities of even the Ru-coated mirrors degrade in time during exposure to EUV radiation. Ruthenium surfaces are chemically reactive and are very effective as heterogeneous catalysts. In the present paper we summarize the thermal and radiation-induced surface chemistry of bare Ru exposed to gases; the emphasis is on H 2O vapor, a dominant background gas in vacuum processing chambers. Our goal is to provide insights into the fundamental physical processes that affect the reflectivity of Ru-coated Mo/Si multilayer mirrors exposed to EUV radiation. Our ultimate goal is to identify and recommend practices or antidotes that may extend mirror lifetimes.

  12. REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

    NASA Astrophysics Data System (ADS)

    McCord, Mark A.; Petric, Paul; Ummethala, Upendra; Carroll, Allen; Kojima, Shinichi; Grella, Luca; Shriyan, Sameet; Rettner, Charles T.; Bevis, Chris F.

    2012-03-01

    REBL (Reflective Electron Beam Lithography) is a novel concept for high speed maskless projection electron beam lithography. Originally targeting 45 nm HP (half pitch) under a DARPA funded contract, we are now working on optimizing the optics and architecture for the commercial silicon integrated circuit fabrication market at the equivalent of 16 nm HP. The shift to smaller features requires innovation in most major subsystems of the tool, including optics, stage, and metrology. We also require better simulation and understanding of the exposure process. In order to meet blur requirements for 16 nm lithography, we are both shrinking the pixel size and reducing the beam current. Throughput will be maintained by increasing the number of columns as well as other design optimizations. In consequence, the maximum stage speed required to meet wafer throughput targets at 16 nm will be much less than originally planned for at 45 nm. As a result, we are changing the stage architecture from a rotary design to a linear design that can still meet the throughput requirements but with more conventional technology that entails less technical risk. The linear concept also allows for simplifications in the datapath, primarily from being able to reuse pattern data across dies and columns. Finally, we are now able to demonstrate working dynamic pattern generator (DPG) chips, CMOS chips with microfabricated lenslets on top to prevent crosstalk between pixels.

  13. Scanner performance predictor and optimizer in further low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Aoyama, Hajime; Nakashima, Toshiharu; Ogata, Taro; Kudo, Shintaro; Kita, Naonori; Ikeda, Junji; Matsui, Ryota; Yamamoto, Hajime; Sukegawa, Ayako; Makino, Katsushi; Murayama, Masayuki; Masaki, Kazuo; Matsuyama, Tomoyuki

    2014-03-01

    Due to the importance of errors in lithography scanners, masks, and computational lithography in low-k1 lithography, application software is used to simultaneously reduce them. We have developed "Masters" application software, which is all-inclusive term of critical dimension uniformity (CDU), optical proximity effect (OPE), overlay (OVL), lens control (LNS), tool maintenance (MNT) and source optimization for wide process window (SO), for compensation of the issues on imaging and overlay. In this paper, we describe the more accurate and comprehensive solution of OPE-Master, LNS-Master and SO-Master with functions of analysis, prediction and optimization. Since OPE-Master employed a rigorous simulation, a root cause of error in OPE matching was found out. From the analysis, we had developed an additional knob and evaluated a proof-of- concept for the improvement. Influence of thermal issues on projection optics is evaluated with a heating prediction, and an optimization with scanner knobs on an optimized source taken into account mask 3D effect for obtaining usable process window. Furthermore, we discuss a possibility of correction for reticle expansion by heating comparing calculation and measurement.

  14. Solid State Research.

    DTIC Science & Technology

    2007-11-02

    Technology, High Speed Electronics, Microelectronics, Analog Device Technology, and Advanced Silicon Technology. Funding is provided primarily by the...Illustrations vii Table ix Introduction xi Reports on Solid State Research xiii Organization xxiii 1. QUANTUM ELECTRONICS 1 1.1 High -Power Passively...Microchemical Etching of Silicon 13 3.2 Calorimetric Measurements of Optical Materials for 193-nm Lithography 17 4. HIGH SPEED ELECTRONICS 21 4.1

  15. Wafer chamber having a gas curtain for extreme-UV lithography

    DOEpatents

    Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  16. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  17. ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

    SciTech Connect

    Mendez-Torres, A.; Torres, R.; Lam, P.

    2011-07-15

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  18. ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS

    SciTech Connect

    Torres, R.; Mendez-Torres, A.; Lam, P.

    2011-06-09

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  19. Uniformity of LED light illumination in application to direct imaging lithography

    NASA Astrophysics Data System (ADS)

    Huang, Ting-Ming; Chang, Shenq-Tsong; Tsay, Ho-Lin; Hsu, Ming-Ying; Chen, Fong-Zhi

    2016-09-01

    Direct imaging has widely applied in lithography for a long time because of its simplicity and easy-maintenance. Although this method has limitation of lithography resolution, it is still adopted in industries. Uniformity of UV irradiance for a designed area is an important requirement. While mercury lamps were used as the light source in the early stage, LEDs have drawn a lot of attention for consideration from several aspects. Although LED has better and better performance, arrays of LEDs are required to obtain desired irradiance because of limitation of brightness for a single LED. Several effects are considered that affect the uniformity of UV irradiance such as alignment of optics, temperature of each LED, performance of each LED due to production uniformity, and pointing of LED module. Effects of these factors are considered to study the uniformity of LED Light Illumination. Numerical analysis is performed by assuming a serious of control factors to have a better understanding of each factor.

  20. Formation and properties of 3D metamaterial composites fabricated using nanometer scale laser lithography (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Prokes, Sharka M.; Perkins, Frank K.; Glembocki, Orest J.

    2015-08-01

    Metamaterials designed for the visible or near IR wavelengths require patterning on the nanometer scale. To achieve this, e-beam lithography is used, but it is extremely difficult and can only produce 2D structures. A new alternative technique to produce 2D and 3D structures involves laser fabrication using the Nanoscribe 3D laser lithography system. This is a direct laser writing technique which can form arbitrary 3D nanostructures on the nanometer scale and is based on multi-photon polymerization. We are creating 2D and 3D metamaterials via this technique, and subsequently conformally coating them using Atomic Layer Deposition of oxides and Ag. We will discuss the optical properties of these novel composite structures and their potential for dual resonant metamaterials.

  1. Fast fabrication of curved microlens array using DMD-based lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Zhimin; Gao, Yiqing; Luo, Ningning; Zhong, Kejun

    2016-01-01

    Curved microlens array is the core element of the biologically inspired artificial compound eye. Many existing fabrication processes remain expensive and complicated, which limits a broad range of application of the artificial compound eye. In this paper, we report a fast fabrication method for curved microlens array by using DMD-based maskless lithography. When a three-dimensional (3D) target curved profile is projected into a two-dimensional (2D) mask, arbitrary curved microlens array can be flexibly and efficiently obtained by utilizing DMD-based lithography. In order to verify the feasibility of this method, a curved PDMS microlens array with 90 micro lenslets has been fabricated. The physical and optical characteristics of the fabricated microlens array suggest that this method is potentially suitable for applications in artificial compound eye.

  2. Ion beam lithography for Fresnel zone plates in X-ray microscopy.

    PubMed

    Keskinbora, Kahraman; Grévent, Corinne; Bechtel, Michael; Weigand, Markus; Goering, Eberhard; Nadzeyka, Achim; Peto, Lloyd; Rehbein, Stefan; Schneider, Gerd; Follath, Rolf; Vila-Comamala, Joan; Yan, Hanfei; Schütz, Gisela

    2013-05-20

    Fresnel Zone Plates (FZP) are to date very successful focusing optics for X-rays. Established methods of fabrication are rather complex and based on electron beam lithography (EBL). Here, we show that ion beam lithography (IBL) may advantageously simplify their preparation. A FZP operable from the extreme UV to the limit of the hard X-ray was prepared and tested from 450 eV to 1500 eV. The trapezoidal profile of the FZP favorably activates its 2nd order focus. The FZP with an outermost zone width of 100 nm allows the visualization of features down to 61, 31 and 21 nm in the 1st, 2nd and 3rd order focus respectively. Measured efficiencies in the 1st and 2nd order of diffraction reach the theoretical predictions.

  3. Assessment of carbon layer growth induced by resists outgassing in multi e-beams lithography

    NASA Astrophysics Data System (ADS)

    Marusic, JC; Pourteau, ML; Cêtre, S.; Pain, L.; Mebiene-Engohang, AP; David, S.; Labau, S.; Boussey, J.

    2014-10-01

    The development of multiple e-beam lithography equipment is seen as an alternative for next generation lithography. However, similarly to EUV lithography, this technology faces important challenges in controlling the contamination of the optics due to deposition of carbon layer induced by the outgassed chemical species from resist under electron bombardment. An experimental setup was designed and built at LETI to study the outgassed species and observe the carbon layer. In this setup, resist coated wafers 100 mm size are exposed under a 5 kV e-beam gun. During exposure, byproducts from outgassed species are monitored with a Residual Gas Analyzer (RGA). The identification of outgassed chemical species is done with an ex-situ TD-GC-MS analysis (ThermoDesorption-Gaz Chromatography-Mass Spectrometry). In a second part of this investigation, we observed the contamination carbon layer growth induced by the outgassing. Thereby, we fabricated a device which consists of a silicon membrane with micro-machined apertures. During e-beam exposure, this device simulates the multiple parallel beams of the optic system of a maskless lithography tool. The deposited contamination layer on device is then observed and thickness measured under SEM. In this paper, we present the results of outgassing and contamination on 3 chemically amplified resists showing that contamination is not directly dependent of the overall outgassing rate but on first order of the outgassing from Photo Acid Generator (PAG). It also reports on the performance in reducing outgassing and contamination of applying a top-coat layer on top of the resist and shows that reduction is more important for contamination than for outgassing.

  4. Multilayer coatings of 10x projection for extreme-ultraviolet lithography

    SciTech Connect

    Folta, J A; Montcalm, C; Spiller, E; Wedowski, M

    1999-03-09

    Two new sets of projections optics for the prototype 10X reduction EUV lithography system were coated with Mo/Si multilayers. The coating thickness was graded across the optics by using shadow masks to ensure maximum throughput at all incidence angles in the camera. The overall deviation of the (normalized) wavelength response across the clear aperture of each mirror is below 0.01% RMS. However, the wavelength mismatch between two optics coated in different runs is up to 0.07 nm. Nevertheless, this is still within the allowed tolerances, and the predicted optical throughput loss in the camera due to such wavelength mismatch is about 4%. EUV reflectances of 63-65% were measured around 13.40 nm for the secondary optics, which is in good agreement with the expected reflectance based on the substrate finish as measured with AFM.

  5. W-CMOS blanking device for projection multibeam lithography

    NASA Astrophysics Data System (ADS)

    Jurisch, Michael; Irmscher, Mathias; Letzkus, Florian; Eder-Kapl, Stefan; Klein, Christof; Loeschner, Hans; Piller, Walter; Platzgummer, Elmar

    2010-05-01

    As the designs of future mask nodes become more and more complex the corresponding pattern writing times will rise significantly when using single beam writing tools. Projection multi-beam lithography [1] is one promising technology to enhance the throughput compared to state of the art VSB pattern generators. One key component of the projection multi-beam tool is an Aperture Plate System (APS) to form and switch thousands of individual beamlets. In our present setup a highly parallel beam is divided into 43,008 individual beamlets by a Siaperture- plate. These micrometer sized beams pass through larger openings in a blanking-plate and are individually switched on and off by applying a voltage to blanking-electrodes which are placed around the blanking-plate openings. A charged particle 200x reduction optics demagnifies the beamlet array to the substrate. The switched off beams are filtered out in the projection optics so that only the beams which are unaffected by the blanking-plate are projected to the substrate with 200x reduction. The blanking-plate is basically a CMOS device for handling the writing data. In our work the blanking-electrodes are fabricated using CMOS compatible add on processes like SiO2-etching or metal deposition and structuring. A new approach is the implementation of buried tungsten electrodes for beam blanking.

  6. Internal state manipulation for neutral atom lithography

    NASA Astrophysics Data System (ADS)

    Thywissen, Joseph Hermann

    2000-11-01

    We examine how the manipulation of the internal states of atoms can be used for atom lithography. Metastable argon atoms pattern a substrate by activating the growth of a carbonaceous material on the surface. We develop resist/etch systems that support 20 nm feature sizes, 2:1 aspect ratios, and 103 feature height amplification. Gold, silver, silicon, silicon dioxide, and silicon nitride substrates are patterned. Standing wave quenching (SWQ) light masks are used to create 65nm- wide features spaced 401 nm apart. One application of SWQ is to create a length reference artifact. We present a detailed error budget for the pattern periodicity, and find that an accuracy of better than one part in 106 is possible. We demonstrate atom resonance lithography (ARL), the first use of frequency encoding of spatial information for atom lithography. ARL has the potential to create patterns in two dimensions whose feature size is smaller than 20 nm and whose spacing is not limited by the wavelength of the patterning light. We form features in silicon that are 2.2 μm wide and spaced 20 μm apart. Using multiple probe frequencies, we demonstrate that multiple features can be created over the area covered by a monotonic gradient. The appendices include original contributions to the theory of manipulating atoms using micro- electromagnets. We propose several ways to create a magnetic waveguide using microfabricated wire patterns on a surface. We also discuss several implications of tight confinement: single mode atom guides, elongated traps with quasi-one-dimensional energetics, and constrictions whose conductance is quantized.

  7. Plasma formed ion beam projection lithography system

    DOEpatents

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  8. Directly patterned inorganic hardmask for EUV lithography

    NASA Astrophysics Data System (ADS)

    Stowers, Jason K.; Telecky, Alan; Kocsis, Michael; Clark, Benjamin L.; Keszler, Douglas A.; Grenville, Andrew; Anderson, Chris N.; Naulleau, Patrick P.

    2011-04-01

    This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity, metal-impurity content, outgassing, pattern transfer, and resist strip.

  9. Film stacking architecture for immersion lithography process

    NASA Astrophysics Data System (ADS)

    Goto, Tomohiro; Sanada, Masakazu; Miyagi, Tadashi; Shigemori, Kazuhito; Kanaoka, Masashi; Yasuda, Shuichi; Tamada, Osamu; Asai, Masaya

    2008-03-01

    In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This study used a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. This evaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge. Patterning defects were improved with suitable film stacking.

  10. Metallic nanowires by full wafer stencil lithography.

    PubMed

    Vazquez-Mena, O; Villanueva, G; Savu, V; Sidler, K; van den Boogaart, M A F; Brugger, J

    2008-11-01

    Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resistivity of the wires were studied. Nanowires down to 70 nm wide and 5 mum long have been achieved showing a resistivity of 10 microOmegacm for Al and 5 microOmegacm for Au and maximum current density of approximately 10(8) A/cm(2). This proves the capability of stencil lithography for the fabrication of metallic nanowires on a full wafer scale.

  11. Wave and Particle in Molecular Interference Lithography

    SciTech Connect

    Juffmann, Thomas; Truppe, Stefan; Geyer, Philipp; Major, Andras G.; Arndt, Markus; Deachapunya, Sarayut; Ulbricht, Hendrik

    2009-12-31

    The wave-particle duality of massive objects is a cornerstone of quantum physics and a key property of many modern tools such as electron microscopy, neutron diffraction or atom interferometry. Here we report on the first experimental demonstration of quantum interference lithography with complex molecules. Molecular matter-wave interference patterns are deposited onto a reconstructed Si(111) 7x7 surface and imaged using scanning tunneling microscopy. Thereby both the particle and the quantum wave character of the molecules can be visualized in one and the same image. This new approach to nanolithography therefore also represents a sensitive new detection scheme for quantum interference experiments.

  12. Highly absorbing ARC for DUV lithography

    NASA Astrophysics Data System (ADS)

    Pavelchek, Edward K.; Meador, James D.; Guerrero, Douglas J.; Lamb, James E., III; Kache, Ajit; doCanto, Manuel; Adams, Timothy G.; Stark, David R.; Miller, Daniel A.

    1996-06-01

    The properties of a new anti-reflective coating for 248 nm lithography are described. It is formed by thermally cross-linking a spin-on organic coating, and has an absorbance greater than 12/micrometers. It is compatible with UVIIHS and APEX-E photoresists. Thin films (less than 600 angstrom over silicon substrates) are found to completely suppress standing waves, to reduce EO swing curves to less than 3%, and to offer good CD control over typical field oxide topography. The etch rate was found to be comparable to that of the APEX-E photoresist.

  13. Lithography-Free Microchannel Fabrication in PDMS

    NASA Astrophysics Data System (ADS)

    Sankaran, Jeyantt S.; Kahsai, Wintana T.; Pham, Uyen H. T.; Iqbal, Samir M.

    2011-03-01

    We report a novel method for the fabrication of microchannels that could potentially be used for pervaporation experiments, cell adhesion and cell movement studies and detection of selective protein bio-markers. PDMS can sustain high temperatures, has a high young's modulus and it is biologically inert. Hydrophobic-hydrophilic interactions at gel point of PDMS form the basis of the presented technique. The repulsion of hydrophilic particles by the hydrophobic polymer matrix, stemming from the reduction of entropy and free energy variations during polymerization, provides an elegant lithography-independent approach for the fabrication of self-aligned microchannels. This work was supported by National Science Foundation CAREER Grant (ECCS 0845669).

  14. Focused ion beam lithography and anodization combined nanopore patterning.

    PubMed

    Lu, Kathy; Zhao, Jingzhong

    2010-10-01

    In this study, focused ion beam lithography and anodization are combined to create different nanopore patterns. Uniform-, alternating-, and gradient-sized shallow nanopore arrays are first made on high purity aluminum by focused ion beam lithography. These shallow pore arrays are then used as pore initiation sites during anodization by different electrolytes. Depending on the nature of the anodization electrolyte, the nanopore patterns by focused ion beam lithography play different roles in further pore development during anodization. The pore-to-pore distance by focused ion beam lithography should match with that by anodization for guided pore development to be effective. Ordered and heterogeneous nanopore arrays are obtained by the focused ion beam lithography and anodization combined approach.

  15. Pattern transfer processes for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Miyoshi, Seiro; Furukawa, Takamitsu; Watanabe, Hiroyuki; Irie, Shigeo; Itani, Toshiro

    2002-07-01

    We describe and evaluate three kinds of pattern transfer processes that are suitable for 157-nm lithography. These transfer processes are 1) a hard mask (HM) process using SiO as a HM material, 2) a HM process using an organic bottom anti-reflecting coating (BARC)/SiN structure, and 3) a bi- layer process using a silicon-containing resist and an organic film as the bottom layer. In all of these processes, the underlayer fo the resist acts as an anti-reflecting layer. For the HM processes, we patterned a newly developed fluorine-containing resist using a 157-nm microstepper, and transferred the resist patterns to the hard mask by reactive ion etching (RIE) with minimal critical dimension shift. Using the HM pattern, we then fabricated a 65nm Wsi/poly-Si gate pattern using a high-NA microstepper (NA=0.85). With the bi-layer process, we transferred a 60nm 1:1 lines and spaces pattern of a newly developed silicon-containing resist to a 300nm-thick organic film by RIE. The fabrication of a 65nm 1:1 gate pattern and 60nm 1:1 organic film patten clearly demonstrated that 157-nm lithography is the best candidate for fabricating sub-70nm node devices.

  16. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  17. Economic consequences of high throughput maskless lithography

    NASA Astrophysics Data System (ADS)

    Hartley, John G.; Govindaraju, Lakshmi

    2005-11-01

    Many people in the semiconductor industry bemoan the high costs of masks and view mask cost as one of the significant barriers to bringing new chip designs to market. All that is needed is a viable maskless technology and the problem will go away. Numerous sites around the world are working on maskless lithography but inevitably, the question asked is "Wouldn't a one wafer per hour maskless tool make a really good mask writer?" Of course, the answer is yes, the hesitation you hear in the answer isn't based on technology concerns, it's financial. The industry needs maskless lithography because mask costs are too high. Mask costs are too high because mask pattern generators (PG's) are slow and expensive. If mask PG's become much faster, mask costs go down, the maskless market goes away and the PG supplier is faced with an even smaller tool demand from the mask shops. Technical success becomes financial suicide - or does it? In this paper we will present the results of a model that examines some of the consequences of introducing high throughput maskless pattern generation. Specific features in the model include tool throughput for masks and wafers, market segmentation by node for masks and wafers and mask cost as an entry barrier to new chip designs. How does the availability of low cost masks and maskless tools affect the industries tool makeup and what is the ultimate potential market for high throughput maskless pattern generators?

  18. Atomic Image Projection Electron Beam Lithography

    NASA Astrophysics Data System (ADS)

    Kim, Ki-Bum

    2006-03-01

    While we are approaching to the nanotechnology era, as was proposed by Richard Feynman in 1959, our main concern still lies in how one can controllably manufacture and utilize nanometer scale features. The top-down approaches, most notably, lithography based techniques still have the problem of throughput although it has been successfully demonstrate to make features with the size less than 10 nm. The bottom-up approaches, either utilizing chemical vapor deposition process to make carbon nanotube or wet-chemical process to make size controllable quantum dots and rods, still have the limitation of extending it to many different types of materials and also delivering them on a wafer size substrate to make nanodevices. In this talk, we will propose a novel electron beam lithography technique to make nanometer scale features. The novelty of this process lies in the fact that one can utilize the crystalline lattice image commonly observed by the high resolution transmission electron microscopy as an ultimate mask to generate nanometer scale patterns. Using this technique, we demonstrate that down to 45 nm pitch size can be resolved on hydrogen silsesquioxine (HSQ) e-beam resist material. The patterns are formed on Si substarte with the dot size of about 30 nm and the line size of about 25 nm. This technique can be extend to define less than 10 nm size features only if the suitable resist is developed.

  19. Deep-etch x-ray lithography at the ALS: First results

    SciTech Connect

    Malek, C.K.; Jackson, K.H.; Brennen, R.A.

    1997-04-01

    The fabrication of high-aspect-ratio and three-dimensional (3D) microstructures is of increasing interest in a multitude of applications in fields such as micromechanics, optics, and interconnect technology. Techniques and processes that enable lithography in thick materials differ from the planar technologies used in standard integrated circuit processing. Deep x-ray lithography permits extremely precise and deep proximity printing of a given pattern from a mask into a very thick resist. It requires a source of hard, intense, and well collimated x-ray radiation, as is provided by a synchrotron radiation source. The thick resist microstructures, so produced can be used as templates from which ultrahigh precision parts with high aspect ratios can be mass-produced out of a large variety of materials (metals, plastics, ceramics). This whole series of techniques and processes has been historically referred to as {open_quotes}LIGA,{close_quotes} from the German acronym for lithography, electroforming (Galvanoformung), and plastic molding (Abformung), the first development of the basic LIGA process having been performed at the Nuclear Research Center at Karlsruhe in Germany.

  20. Laser direct write system for fabricating seamless roll-to-roll lithography tools

    NASA Astrophysics Data System (ADS)

    Petrzelka, Joseph E.; Hardt, David E.

    2013-03-01

    Implementations of roll to roll contact lithography require new approaches towards manufacturing tooling, including stamps for roll to roll nanoimprint lithography (NIL) and soft lithography. Suitable roll based tools must have seamless micro- or nano-scale patterns and must be scalable to roll widths of one meter. The authors have developed a new centrifugal stamp casting process that can produce uniform cylindrical polymer stamps in a scalable manner. The pattern on the resulting polymer tool is replicated against a corresponding master pattern on the inner diameter of a centrifuge drum. This master pattern is created in photoresist using a UV laser direct write system. This paper discusses the design and implementation of a laser direct write system targeting the internal diameter of a rotating drum. The design uses flying optics to focus a laser beam along the axis of the centrifuge drum and to redirect the beam towards the drum surface. Experimental patterning results show uniform coatings of negative photoresist in the centrifuge drum that are effectively patterned with a 405 nm laser diode. Seamless patterns are shown to be replicated in a 50 mm diameter, 60 mm long cylindrical stamp made from polydimethylsiloxane (PDMS). Direct write results show gratings with line widths of 10 microns in negative photoresist. Using an FPGA, the laser can be accurately timed against the centrifuge encoder to create complex patterns.

  1. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  2. The study of lithography conditions to use advanced resist performance properly

    NASA Astrophysics Data System (ADS)

    Yang, Zhengkai; Wang, Wuping; Chen, Quan; Aoyama, Hajime; Takemasa, Kengo; Sei, Toshihiko; Miyazawa, Tami; Matsuyama, Tomoyuki; Shao, Chun

    2015-03-01

    Correlation of resist modeling of printed features with lithographic data is a necessary part of developing new lithographic processes. Recently, we have found a case in which the most advanced resist types sometimes show better behavior than expectations from optical simulation in terms of dose latitude, MEEF (mask error enhancement factor), and even CD variation through different pitches. This superior resist performance may allow greater margin for error in each component, such as mask, scanner, and metrology in very low-k1 lithography. On the other hand, since the resist pattern CD for the most advanced resist is very much different from the prediction of optical simulation, it is a challenge to build OPC models using the exposure result with the resist. In order to solve this issue, we have tried to use several litho parameters to reduce the gap between optical simulation and resist CDs for OPC modeling. In this paper we discuss the effect of the parameters to reduce the gap between optical model and actual resist behavior with keeping superior performance as much as possible. The method we mention may be a key to use the most advanced resist in near future. As a result the life of ArF immersion lithography in the critical layer would be extended than we expect today.

  3. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    NASA Astrophysics Data System (ADS)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  4. Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application

    NASA Astrophysics Data System (ADS)

    Choi, Jeayoung

    In this thesis, a novel silica nanosphere (SNS) lithography technique has been developed to offer a fast, cost-effective, and large area applicable nano-lithography approach. The SNS can be easily deposited with a simple spin-coating process after introducing a N,N-dimethyl-formamide (DMF) solvent which can produce a highly close packed SNS monolayer over large silicon (Si) surface area, since DMF offers greatly improved wetting, capillary and convective forces in addition to slow solvent evaporation rate. Since the period and dimension of the surface pattern can be conveniently changed and controlled by introducing a desired size of SNS, and additional SNS size reduction with dry etching process, using SNS for lithography provides a highly effective nano-lithography approach for periodically arrayed nano-/micro-scale surface patterns with a desired dimension and period. Various Si nanostructures ( i.e., nanopillar, nanotip, inverted pyramid, nanohole) are successfully fabricated with the SNS nano-lithography technique by using different etching technique like anisotropic alkaline solution (i.e., KOH) etching, reactive-ion etching (RIE), and metal-assisted chemical etching (MaCE). In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption

  5. Two-Dimensional Modeling Of Contrast-Enhanced Lithography

    NASA Astrophysics Data System (ADS)

    Griffing, B. F.; Lorensen, W. E.

    1984-05-01

    The aerial image produced by projection mask aligners can be readily visualized using high resolution computer graphics. This paper describes a computer model that calculates the aerial image using a mask pattern and the optical system characteristics as input. The program converts the digital result into a grey scale image. This image is an accu-rate representation of the image the photoresist actually "sees." The model is applied to contrast-enhanced lithography (CEL).1120 By combining the aerial image model with the known bleaching behavior of CEL materials it is possible to calculate the image intensity transmitted by the bleachable layer as a function of time. This result is presented in the form a computer-generated movie, which makes apparent the high contrast of the transmitted image. A second application of the aerial image model is to two-dimensional resist pattern modeling. Although not as sophisticated as SAMPLE4 this model is capable of modeling com-plete structures, such as a dynamic RAM cell. The output of the model is a three-dimensional surface which is displayed using a computer-generated, shaded surface. Linewidth variation with exposure is easily explored with this model. It is a best case model in that it assumes ideal optics and resist development conditions. Resist thickness is calculated using an experimentally determined thickness transfer function. These assumptions are necessary in order to minimize the time necessary for performing the calculations. The model calculates a pattern on a 512 X 512 point array from an image in 1-2 min. on a VAX-780. Since ideal conditions are assumed, the utility of the model is primarily in its ability to predict when a structure is beyond the limits of a given optical system. Applications of the model to CEL will be presented.

  6. Signal response metrology (SRM): a new approach for lithography metrology

    NASA Astrophysics Data System (ADS)

    Pandev, Stilian; Fang, Fang; Kim, Young Ki; Tsai, Jamie; Vaid, Alok; Subramany, Lokesh; Sanko, Dimitry; Ramanathan, Vidya; Zhou, Ren; Venkataraman, Kartik; Haupt, Ronny

    2015-03-01

    CD uniformity requirements at 20nm and more advanced nodes have challenged the precision limits of CD-SEM metrology, conventionally used for scanner qualification and in-line focus/dose monitoring on product wafers. Optical CD metrology has consequently gained adoption for these applications because of its superior precision, but has been limited adopted, due to challenges with long time-to-results and robustness to process variation. Both of these challenges are due to the limitations imposed by geometric modeling of the photoresist (PR) profile as required by conventional RCWA-based scatterometry. Signal Response Metrology (SRM) is a new technique that obviates the need for geometric modeling by directly correlating focus, dose, and CD to the spectral response of a scatterometry tool. Consequently, it suggests superior accuracy and robustness to process variation for focus/dose monitoring, as well as reducing the time to set up a new measurement recipe from days to hours. This work describes the fundamental concepts of SRM and the results of its application to lithography metrology and control. These results include time to results and measurement performance data on Focus, Dose and CD measurements performed on real devices and on design rule metrology targets.

  7. Fabrication of Nickel Nanostructure Arrays Via a Modified Nanosphere Lithography

    PubMed Central

    2011-01-01

    In this paper, we present a modified nanosphere lithographic scheme that is based on the self-assembly and electroforming techniques. The scheme was demonstrated to fabricate a nickel template of ordered nanobowl arrays together with a nickel nanostructure array-patterned glass substrate. The hemispherical nanobowls exhibit uniform sizes and smooth interior surfaces, and the shallow nanobowls with a flat bottom on the glass substrate are interconnected as a net structure with uniform thickness. A multiphysics model based on the level set method (LSM) was built up to understand this fabricating process by tracking the interface between the growing nickel and the electrolyte. The fabricated nickel nanobowl template can be used as a mold of long lifetime in soft lithography due to the high strength of nickel. The nanostructure–patterned glass substrate can be used in optical and magnetic devices due to their shape effects. This fabrication scheme can also be extended to a wide range of metals and alloys. PMID:27502648

  8. Diffraction spectral filter for use in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Tichenor, Daniel A.; Bernardez, Luis J.

    2002-01-01

    A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

  9. Oxidation resistance and microstructure of Ru-capped extreme ultraviolet lithography multilayers

    SciTech Connect

    Bajt, S; Dai, Z; Nelson, E J; Wall, M A; Alameda, J B; Nguyen, N; Baker, S L; Robinson, J C; Taylor, J S; Aquila, A; Edwards, N V

    2005-06-15

    The oxidation resistance of protective capping layers for extreme ultraviolet lithography (EUVL) multilayers depends on their microstructure. Differently prepared Ru-capping layers, deposited on Mo/Si EUVL multilayers, were investigated to establish their baseline structural, optical, and surface properties in as-deposited state. The same capping layer structures were then tested for their thermal stability and oxidation resistance. The best performing Ru-capping layer structure was analyzed in detail with transmission electron microscopy (TEM). As compared to other Ru capping layers preparations studied here it is the only one that shows grains with preferential orientation. This information is essential for modeling and performance optimization of EUVL multilayers.

  10. A novel approach to developer-soluble anti-reflective coatings for 248-nm lithography

    NASA Astrophysics Data System (ADS)

    Mercado, Ramil-Marcelo L.; Lowes, Joyce A.; Washburn, Carlton A.; Guerrero, Douglas J.

    2007-03-01

    A novel approach to developer-soluble bottom anti-reflective coatings (BARCs) for 248-nm lithography was demonstrated. The BARC formulations are photosensitive, dye-filled systems incorporated with a polymer binder. The films are generated by thermally crosslinking the polymer matrix, and are then photochemically decrosslinked in order to render them soluble in developer solutions. The BARCs are compatible with solvents commonly used in the industry. Easy modification of the films with regard to optical properties for potential use with various substrates was also demonstrated. The BARCs exhibit anisotropic development in aqueous tetramethylammonium hydroxide (TMAH) solutions subsequent to simulated photoresist application, exposure, and post-exposure bake.

  11. Grayscale gel lithography for programmed buckling of non-Euclidean hydrogel plates.

    PubMed

    Na, Jun-Hee; Bende, Nakul P; Bae, Jinhye; Santangelo, Christian D; Hayward, Ryan C

    2016-06-14

    Shape programmable materials capable of morphing from a flat sheet into controlled three dimensional (3D) shapes offer promise in diverse areas including soft robotics, tunable optics, and bio-engineering. We describe a simple method of 'grayscale gel lithography' that relies on a digital micromirror array device (DMD) to control the dose of ultraviolet (UV) light, and therefore the extent of swelling of a photocrosslinkable poly(N-isopropyl acrylamide) (PNIPAm) copolymer film, with micrometer-scale spatial resolution. This approach allows for effectively smooth profiles of swelling to be prescribed, enabling the preparation of buckled 3D shapes with programmed Gaussian curvature.

  12. Imaging based optofluidic air flow meter with polymer interferometers defined by soft lithography.

    PubMed

    Song, Wuzhou; Psaltis, Demetri

    2010-08-02

    We present an optofluidic chip with integrated polymer interferometers for measuring both the microfluidic air pressure and flow rate. The chip contains a microfluidic circuit and optical cavities on a polymer which was defined by soft lithography. The pressure can be read out by imaging the interference patterns of the cavities. The air flow rate was then calculated from the differential pressure across a microfluidic Venturi circuit. Air flow rate measurement in the range of 0-2mg/second was demonstrated. This device provides a simple and versatile way for in situ measuring the microscale air pressure and flow on chip.

  13. Step and flash imprint lithography for semiconductor high volume manufacturing?

    NASA Astrophysics Data System (ADS)

    Malloy, M.; Litt, L. C.

    2010-03-01

    Step and Flash Imprint Lithography (SFIL), a form of ultraviolet nanoimprint lithography (UV-NIL), is recognized for its resolution and patterning abilities. It is one of the few next generation lithography techniques capable of meeting the resolution requirements of future semiconductor devices. However, many integration issues such as defectivity, throughput, and overlay must be resolved before SFIL can be used for semiconductor high volume manufacturing (HVM). This paper discusses the current status of SFIL, including the process and templates, and shows where more industry collaboration is needed to solve the most critical issues.

  14. Hybrid hotspot detection using regression model and lithography simulation

    NASA Astrophysics Data System (ADS)

    Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki; Pan, David Z.

    2016-03-01

    As minimum feature sizes shrink, unexpected hotspots appear on wafers. Therefore, it is important to detect and fix these hotspots at design stage to reduce development time and manufacturing cost. Currently, as the most accurate approach, lithography simulation is widely used to detect such hotspots. However, it is known to be time-consuming. This paper proposes a novel aerial image synthesizing method using regression and minimum lithography simulation for only hotspot detection. Experimental results show hotspot detection on the proposed method is equivalent compared with the results on the conventional hotspot detection method which uses only lithography simulation with much less computational cost.

  15. Photonic integrated circuits: new challenges for lithography

    NASA Astrophysics Data System (ADS)

    Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

    2016-10-01

    In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

  16. Nanoimprint lithography using disposable biomass template

    NASA Astrophysics Data System (ADS)

    Hanabata, Makoto; Takei, Satoshi; Sugahara, Kigen; Nakajima, Shinya; Sugino, Naoto; Kameda, Takao; Fukushima, Jiro; Matsumoto, Yoko; Sekiguchi, Atsushi

    2016-04-01

    A novel nanoimprint lithography process using disposable biomass template having gas permeability was investigated. It was found that a disposable biomass template derived from cellulose materials shows an excellent gas permeability and decreases transcriptional defects in conventional templates such as quartz, PMDS, DLC that have no gas permeability. We believe that outgasses from imprinted materials are easily removed through the template. The approach to use a cellulose for template material is suitable as the next generation of clean separation technology. It is expected to be one of the defect-less thermal nanoimprint lithographic technologies. It is also expected that volatile materials and solvent including materials become available that often create defects and peelings in conventional temples that have no gas permeability.

  17. Patterning proteins and cells using soft lithography.

    PubMed

    Kane, R S; Takayama, S; Ostuni, E; Ingber, D E; Whitesides, G M

    1999-12-01

    This review describes the pattering of proteins and cells using a non-photolithographic microfabrication technology, which we call 'soft lithography' because it consists of a set of related techniques, each of which uses stamps or channels fabricated in an elastomeric ('soft') material for pattern transfer. The review covers three soft lithographic techniques: microcontact printing, patterning using microfluidic channels, and laminar flow patterning. These soft lithographic techniques are inexpensive, are procedurally simple, and can be used to pattern a variety of planar and non-planar substrates. Their successful application does not require stringent regulation of the laboratory environment, and they can be used to pattern surfaces with delicate ligands. They provide control over both the surface chemistry and the cellular environment. We discuss both the procedures for patterning based on these soft lithographic techniques, and their applications in biosensor technology, in tissue engineering, and for fundamental studies in cell biology.

  18. Femtolitre chemistry assisted by microfluidic pen lithography

    PubMed Central

    Carbonell, Carlos; Stylianou, Kyriakos C.; Hernando, Jordi; Evangelio, Emi; Barnett, Sarah A.; Nettikadan, Saju; Imaz, Inhar; Maspoch, Daniel

    2013-01-01

    Chemical reactions at ultrasmall volumes are becoming increasingly necessary to study biological processes, to synthesize homogenous nanostructures and to perform high-throughput assays and combinatorial screening. Here we show that a femtolitre reaction can be realized on a surface by handling and mixing femtolitre volumes of reagents using a microfluidic stylus. This method, named microfluidic pen lithography, allows mixing reagents in isolated femtolitre droplets that can be used as reactors to conduct independent reactions and crystallization processes. This strategy overcomes the high-throughput limitations of vesicles and micelles and obviates the usually costly step of fabricating microdevices and wells. We anticipate that this process enables performing distinct reactions (acid-base, enzymatic recognition and metal-organic framework synthesis), creating multiplexed nanoscale metal-organic framework arrays, and screening combinatorial reactions to evaluate the crystallization of novel peptide-based materials. PMID:23863998

  19. Nondestructive single-shot soft x-ray lithography and contact microscopy using a laser-produced plasma source.

    PubMed

    Rosser, R J; Feder, R; Ng, A; Adams, F; Celliers, P; Speer, R J

    1987-10-01

    A toroidal relay optic has been used to overcome the problem of damage caused by debris that has limited previous attempts at soft x-ray lithography and contact microscopy using laser-produced plasma sources. Not only is the specimen preserved, but it is now possible to have a vacuum retaining soft x-ray transparent Si(3)N(4) window as a permanent part of the apparatus, greatly simplifying specimen handling. The exposure times are ~2 ns.

  20. High-Throughput Fabrication of Resonant Metamaterials with Ultrasmall Coaxial Apertures via Atomic Layer Lithography.

    PubMed

    Yoo, Daehan; Nguyen, Ngoc-Cuong; Martin-Moreno, Luis; Mohr, Daniel A; Carretero-Palacios, Sol; Shaver, Jonah; Peraire, Jaime; Ebbesen, Thomas W; Oh, Sang-Hyun

    2016-03-09

    We combine atomic layer lithography and glancing-angle ion polishing to create wafer-scale metamaterials composed of dense arrays of ultrasmall coaxial nanocavities in gold films. This new fabrication scheme makes it possible to shrink the diameter and increase the packing density of 2 nm-gap coaxial resonators, an extreme subwavelength structure first manufactured via atomic layer lithography, both by a factor of 100 with respect to previous studies. We demonstrate that the nonpropagating zeroth-order Fabry-Pérot mode, which possesses slow light-like properties at the cutoff resonance, traps infrared light inside 2 nm gaps (gap volume ∼ λ(3)/10(6)). Notably, the annular gaps cover only 3% or less of the metal surface, while open-area normalized transmission is as high as 1700% at the epsilon-near-zero (ENZ) condition. The resulting energy accumulation alongside extraordinary optical transmission can benefit applications in nonlinear optics, optical trapping, and surface-enhanced spectroscopies. Furthermore, because the resonance wavelength is independent of the cavity length and dramatically red shifts as the gap size is reduced, large-area arrays can be constructed with λresonance ≫ period, making this fabrication method ideal for manufacturing resonant metamaterials.

  1. High-Throughput Fabrication of Resonant Metamaterials with Ultrasmall Coaxial Apertures via Atomic Layer Lithography

    PubMed Central

    2016-01-01

    We combine atomic layer lithography and glancing-angle ion polishing to create wafer-scale metamaterials composed of dense arrays of ultrasmall coaxial nanocavities in gold films. This new fabrication scheme makes it possible to shrink the diameter and increase the packing density of 2 nm-gap coaxial resonators, an extreme subwavelength structure first manufactured via atomic layer lithography, both by a factor of 100 with respect to previous studies. We demonstrate that the nonpropagating zeroth-order Fabry-Pérot mode, which possesses slow light-like properties at the cutoff resonance, traps infrared light inside 2 nm gaps (gap volume ∼ λ3/106). Notably, the annular gaps cover only 3% or less of the metal surface, while open-area normalized transmission is as high as 1700% at the epsilon-near-zero (ENZ) condition. The resulting energy accumulation alongside extraordinary optical transmission can benefit applications in nonlinear optics, optical trapping, and surface-enhanced spectroscopies. Furthermore, because the resonance wavelength is independent of the cavity length and dramatically red shifts as the gap size is reduced, large-area arrays can be constructed with λresonance ≫ period, making this fabrication method ideal for manufacturing resonant metamaterials. PMID:26910363

  2. Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

    NASA Astrophysics Data System (ADS)

    Gubiotti, Thomas; Sun, Jeff Fuge; Freed, Regina; Kidwingira, Francoise; Yang, Jason; Bevis, Chris; Carroll, Allen; Brodie, Alan; Tong, William M.; Lin, Shy-Jay; Wang, Wen-Chuan; Haspeslagh, Luc; Vereecke, Bart

    2013-03-01

    Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-volume 10 nm logic node performance. REBL uses a novel multi-column wafer writing system combined with an advanced stage architecture to enable the throughput and resolution required for a NGL system. Using a CMOS Digital Pattern Generator (DPG) chip with over one million microlenses, the system is capable of maskless printing of arbitrary patterns with pixel redundancy and pixel-by-pixel grayscaling at the wafer. Electrons are generated in a flood beam via a thermionic cathode at 50-100 keV and decelerated to illuminate the DPG chip. The DPG-modulated electron beam is then reaccelerated and demagnified 80-100x onto the wafer to be printed. Previously, KLA-Tencor reported on the development progress of the REBL tool for maskless lithography at and below the 10 nm logic technology node. Since that time, the REBL team has made good progress towards developing the REBL system and DPG for direct write lithography. REBL has been successful in manufacturing a CMOS controlled DPG chip with a stable charge drain coating and with all segments functioning. This DPG chip consists of an array of over one million electrostatic lenslets that can be switched on or off via CMOS voltages to pattern the flood electron beam. Testing has proven the validity of the design with regards to lenslet performance, contrast, lifetime, and pattern scrolling. This chip has been used in the REBL demonstration platform system for lithography on a moving stage in both PMMA and chemically amplified resist. Direct imaging of the aerial image has also been performed by magnifying the pattern at the wafer plane via a mag stack onto a YAG imaging screen. This paper will discuss the chip design improvements and new charge drain coating that have resulted in a

  3. Solid State Research

    DTIC Science & Technology

    1992-05-15

    L. Chang, T. C. McGill* E. E. Mendez, and C. Tejedor , C. D. Parker eds. (Plenum, New York, 1991), W. D. Goodhue p. 487 Free-Space Board-to-Board...International Solid- Limits and Applications in Fast M. A. Hollis State Circuits Conference, Logic Circuits F . W. Smith San Francisco, California, 19-21...for 193-nm D. C. Shaver Lithography Process Development D. M. Craig C. A. Marchi M. A. Hartney F . Goodall* Optical Lithography at Feature Sizes M. A

  4. Fabrication and characterization of a deep ultraviolet wire grid polarizer with a chromium-oxide subwavelength grating.

    PubMed

    Asano, Kosuke; Yokoyama, Satoshi; Kemmochi, Atsushi; Yatagai, Toyohiko

    2014-05-01

    A wire grid polarizer comprised of chromium oxide is designed for a micro-lithography system using an ArF excimer laser. Optical properties for some material candidates are calculated using a rigorous coupled-wave analysis. The chromium oxide wire grid polarizer with a 90 nm period is fabricated by a double-patterning technique using KrF lithography and dry etching. The extinction ratio of the grating is greater than 20 dB (100:1) at a wavelength of 193 nm. Differences between the calculated and experimental results are discussed.

  5. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications

    NASA Astrophysics Data System (ADS)

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I.; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.69), which enables efficient light focusing even inside other media such as water or adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping and fiber probes.

  6. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes.

  7. Development of motorized plasma lithography for cell patterning.

    PubMed

    Deguchi, Shinji; Nagasawa, Yohei; Saito, Akira C; Matsui, Tsubasa S; Yokoyama, Sho; Sato, Masaaki

    2014-03-01

    The micropatterning of cells, which restricts the adhesive regions on the substrate and thus controls cell geometry, is used to study mechanobiology-related cell functions. Plasma lithography is a means of providing such patterns and uses a spatially-selective plasma treatment. Conventional plasma lithography employs a positionally-fixed mask with which the geometry of the patterns is determined and thus is not suited for producing on-demand geometries of patterns. To overcome this, we have manufactured a new device with a motorized mask mounted in a vacuum chamber of a plasma generator, which we designate motorized plasma lithography. Our pilot tests indicate that various pattern geometries can be obtained with the control of a shielding mask during plasma treatment. Our approach can thus omit the laborious process of preparing photolithographically microfabricated masks required for the conventional plasma lithography.

  8. Micromachining of a fiber-to-waveguide coupler using grayscale lithography and through-wafer etch

    NASA Astrophysics Data System (ADS)

    Dillon, Thomas; Zablocki, Mathew; Shi, Shouyan; Murakowski, Janusz; Prather, Dennis

    2008-02-01

    For some time, the micro-optics and photonics fields have relied on fabrication processes and technology borrowed from the well-established silicon integrated circuit industry. However, new fabrication methodologies must be developed for greater flexibility in the machining of micro-optic devices. To this end, we have explored grayscale lithography as an enabler for the realization of such devices. This process delivers the ability to sculpt materials arbitrarily in three dimensions, thus providing the flexibility to realize optical surfaces to shape, transform, and redirect the propagation of light efficiently. This has opened the door for new classes of optical devices. As such, we present a fiber-to-waveguide coupling structure utilizing a smoothly contoured lensing surface in the device layer of a silicon-on insulator (SOI) wafer, fabricated using grayscale lithography. The structure collects light incident normally to the wafer from a singlemode optical fiber plugged through the back surface and turns the light into the plane of the device layer, focusing it into a single-mode waveguide. The basis of operation is total internal reflection, and the device therefore has the potential advantages of providing a large bandwidth, low polarization sensitivity, high efficiency, and small footprint. The structure was optimized with a simulated annealing algorithm in conjunction with two-dimensional finite-difference time-domain (FDTD) simulation accelerated on the graphics processing unit (GPU), and achieves a theoretical efficiency of approximately seventy percent, including losses due to Fresnel reflection from the oxide/silicon interface. Initial fabrication results validate the principle of operation. We discuss the grayscale fabrication process as well as the through-wafer etch for mechanical stabilization and alignment of the optical fiber to the coupling structure. Refinement of the through-wafer etch process for high etch rate and appropriate sidewall taper are

  9. Novel assist feature design to improve depth of focus in low k1 EUV lithography

    NASA Astrophysics Data System (ADS)

    Kang, Hoyoung

    2009-12-01

    With the expected continual progress of micro-electronics scaling, low k1 techniques may be required even with EUV lithography. One of important techniques of low k1, the off axis illumination (OAI) in combination with sub-resolution assist features (SRAF) on reticles, has been used extensively in optical lithography. Use of assist features combined with off axis illumination typically requires extremely small pattern sizes. The assist pattern enables printing dense and isolated lines simultaneous. In a low k1 region of around 0.4, assist features will increase depth of focus (DOF) of isolated and semi-isolated lines even in EUV. Since EUVL process operates at a relatively higher k1 value than that for the optical lithography, the assist feature size needed is relatively smaller. In addition, with the mask shadowing effect of EUVL, all horizontal lines should be biased thinner by a couple of nanometers, and horizontal assist features will need to do the same. Fabricating such narrow features on masks is challenging, and could potentially limit the application of SRAF in EUVL in the low k1 regime. A novel approach is proposed to create assist features with similar width as the main critical dimension features. The proposed technique creates assist patterns using thinner absorber which would have higher reflectance than normal absorber. Thinner absorber assist pattern can perform similarly with narrower assist pattern and easier to fabricate. With off axis illumination in EUVL and assist patterns, process margin of semi-isolated and isolated lines can be increased for k1 lower than 0.4.

  10. Design of chirped fly's eye uniformizer for ArF lithography illumination system

    NASA Astrophysics Data System (ADS)

    Xiao, Lei; Li, Yanqiu; Wei, Lidong

    2014-11-01

    Fly's eye uniformizer is the key part of ArF lithography illumination system, whose main function is to illuminate the reticle uniformly. Due to the periodic structure of regular fly's eye uniformizer and the high coherence of the ArF laser, the output intensity distribution is modulated with equidistant sharp intensity peaks (interference speckle pattern) which disturbed the uniformity on the reticle. In this paper, we design a chirped fly's eye uniformizer which consists of chirped fly's eye and a condenser for illumination system in ArF lithography system. The chirped fly's eye consists of individually shaped micro-lenses defined by a parametric description which can be derived completely from analytical functions. The micro-lenses with different thicknesses in the chirped fly's eye have a function of delaying the optical path which reducing the laser coherence and speckle pattern on the reticle. Detailed design process of the chirped fly's eye uniformizer for numerical aperture (NA) 0.75 lithography illumination system is presented. Light intensity distribution on reticle produced by regular and chirped fly's eye uniformizer are analyzed and compared by the method of wave optics, and the results show that chirped can restrain sharp intensity peaks efficiently. Furthermore, the chirped fly's eye uniformizer has been traced in LightTools software under conventional and annual illumination modes, and the non-uniformity of the non-scan and scan direction on the reticle reached 0.75% and 1.24% respectively. The simulation results show that the chirped fly's eye uniformizer can provide high illumination uniformity and reduce the speckle pattern efficiently without additional elements.

  11. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  12. Successful demonstration of a comprehensive lithography defect monitoring strategy

    NASA Astrophysics Data System (ADS)

    Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

    2003-07-01

    This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the

  13. Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithography

    NASA Astrophysics Data System (ADS)

    Nam, Kyung-Han; Kim, Lee-Ju; Jeong, Hyoung-Sup; Lee, Sang W.; Lee, In-Soo; Shin, Cheol; Kim, Hong-Seok; Dieu, L.; Paek, Seung-Weon; Koo, Sang-Sool; Bae, Sang-Man; Ham, Young-Mog; Shin, Ki-Soo

    2001-09-01

    ArF lithography that is expected the candidate for next generation optical lithography and attenuated Phase Shift Mask (att-PSM) will be adapted for 0.12micrometers design-rule and beyond. For the next-generation lithography, the most important requirement for mask process is enough resolution and good pattern fidelity to generate various critical patterns, of which sizes are below 0.5micrometers main pattern including OPC patterns. In this paper we describe in terms of blank mask properties, mask making process and wafer performance of ArF attenuated Phase Shift Mask (att-OSM) using TiN/Si3N4(abbreviated as TiN/SiN) multi-layer for Next Generation Lithography (NGL). In view point of material, we have evaluated for the applicability of TiN/SiN multi-layer to ArF lithography as compared with non- stoichiometric MoSiON-based single-layer structure. In mask making process, we used Chemically Amplified Resist (CAR) process characteristics and Dry etching system for improvement of enough resolution and pattern fidelity. Also we have investigated wafer performance for ArF att-PSM in terms of process windows as compared with BIM (Binary Intensity Mask) in 120nm D/R real cell pattern and 100nm L/S(Line and Space)D/R pattern, respectively.

  14. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  15. 3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography.

    PubMed

    Ulmeanu, M; Grubb, M P; Jipa, F; Quignon, B; Ashfold, M N R

    2015-06-01

    We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates.

  16. Nanoimprint lithography using TiO2-SiO2 ultraviolet curable materials

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi

    2015-05-01

    Ultraviolet nanoimprint lithography has great potential for commercial device applications that are closest to production such as optical gratings, planar waveguides, photonic crystals, semiconductor, displays, solar cell panel, sensors, highbrightness LEDs, OLEDs, and optical data storage. I report and demonstrate the newly TiO2-SiO2 ultraviolet curable materials with 20-25 wt% ratio of high titanium for CF4/O2 etch selectivity using nanoimprint lithography process. The multiple structured three-dimensional micro- and nanolines patterns were observed to be successfully patterned over the large areas. The effect of titanium concentration on CF4/O2 etch selectivity with pattern transferring carbon layer imprinting time was investigated. CF4/O2 etching rate of the TiO2-SiO2 ultraviolet curable material was approximately 3.8 times lower than that of the referenced SiO2 sol-gel ultraviolet curable material. The TiO2-SiO2 ultraviolet curable material with high titanium concentration has been proved to be versatile in advanced nanofabrication.

  17. Ultra-Precision Optics

    NASA Technical Reports Server (NTRS)

    1999-01-01

    Under a Joint Sponsored Research Agreement with Goddard Space Flight Center, SEMATECH, Inc., the Silicon Valley Group, Inc. and Tinsley Laboratories, known as SVG-Tinsley, developed an Ultra-Precision Optics Manufacturing System for space and microlithographic applications. Continuing improvements in optics manufacture will be able to meet unique NASA requirements and the production needs of the lithography industry for many years to come.

  18. Inverse pupil wavefront optimization for immersion lithography.

    PubMed

    Han, Chunying; Li, Yanqiu; Dong, Lisong; Ma, Xu; Guo, Xuejia

    2014-10-10

    As the critical dimension of integrated circuits is continuously shrunk, thick mask induced aberration (TMIA) cannot be ignored in the lithography image process. Recently, a set of pupil wavefront optimization (PWO) approaches has been proposed to compensate for TMIA, based on a wavefront manipulator in modern scanners. However, these prior PWO methods have two intrinsic drawbacks. First, the traditional methods fell short in building up the analytical relationship between the pupil wavefront and the cost function, and used time-consuming algorithms to solve for the PWO problem. Second, in traditional methods, only the spherical aberrations were optimized to compensate for the focus exposure matrix tilt and best focus shift induced by TMIA. Thus, the degrees of freedom were limited during the optimization procedure. To overcome these restrictions, we build the analytical relationship between the pupil wavefront and the cost function based on Abbe vector imaging theory. With this analytical model and the Fletcher-Reeves conjugate-gradient algorithm, an inverse PWO method is innovated to balance the TMIA including 37 Zernike terms. Simulation results illustrate that our approach significantly improves image fidelity within a larger process window. This demonstrates that TMIA is effectively compensated by our inverse PWO approach.

  19. Resist profile simulation with fast lithography model

    NASA Astrophysics Data System (ADS)

    He, Yan-Ying; Chou, Chih-Shiang; Tang, Yu-Po; Huang, Wen-Chun; Liu, Ru-Gun; Gau, Tsai-Sheng

    2014-03-01

    A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for OPC modeling. As the technology moves forward, this traditional approach has become insufficient in regard to lithography weak point detection, etching bias prediction, etc. The drawback of this approach is from metrology and simulation. First, top-down SEM is only good for acquiring planar CD information. Some 3D metrology such as cross-section SEM or AFM is necessary to obtain the true resist profile. Second, the TCC modeling approach is only suitable for planar image simulation. In order to model the resist profile, full 3D image simulation is needed. Even though there are many rigorous simulators capable of catching the resist profile very well, none of them is feasible for full-chip application due to the tremendous consumption of computational resource. The authors have proposed a quasi-3D image simulation method in the previous study [1], which is suitable for full-chip simulation with the consideration of sidewall angles, to improve the model accuracy of planar models. In this paper, the quasi-3D image simulation is extended to directly model the resist profile with AFM and/or cross-section SEM data. Resist weak points detected by the model generated with this 3D approach are verified on the wafer.

  20. Evaporative Lithography in Open Microfluidic Channel Networks.

    PubMed

    Lone, Saifullah; Zhang, Jia Ming; Vakarelski, Ivan U; Li, Er Qiang; Thoroddsen, Sigurdur T

    2017-03-13

    We demonstrate a direct capillary-driven method based on wetting and evaporation of various suspensions to fabricate regular two-dimensional wires in an open microfluidic channel through continuous deposition of micro- or nanoparticles under evaporative lithography, akin to the coffee-ring effect. The suspension is gently placed in a loading reservoir connected to the main open microchannel groove on a PDMS substrate. Hydrophilic conditions ensure rapid spreading of the suspension from the loading reservoir to fill the entire channel length. Evaporation during the spreading and after the channel is full increases the particle concentration toward the end of the channel. This evaporation-induced convective transport brings particles from the loading reservoir toward the channel end where this flow deposits a continuous multilayered particle structure. The particle deposition front propagates backward over the entire channel length. The final dry deposit of the particles is thereby much thicker than the initial volume fraction of the suspension. The deposition depth is characterized using a 3D imaging profiler, whereas the deposition topography is revealed using a scanning electron microscope. The patterning technology described here is robust and passive and hence operates without an external field. This work may well become a launching pad to construct low-cost and large-scale thin optoelectronic films with variable thicknesses and interspacing distances.

  1. Pattern collapse mitigation strategies for EUV lithography

    NASA Astrophysics Data System (ADS)

    Goldfarb, Dario L.; Bruce, Robert L.; Bucchignano, James J.; Klaus, David P.; Guillorn, Michael A.; Wu, Chunghsi J.

    2012-03-01

    In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO2) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

  2. Analysis of the blurring in stencil lithography.

    PubMed

    Vazquez-Mena, O; Villanueva, L G; Savu, V; Sidler, K; Langlet, P; Brugger, J

    2009-10-14

    A quantitative analysis of blurring and its dependence on the stencil-substrate gap and the deposition parameters in stencil lithography, a high resolution shadow mask technique, is presented. The blurring is manifested in two ways: first, the structure directly deposited on the substrate is larger than the stencil aperture due to geometrical factors, and second, a halo of material is formed surrounding the deposited structure, presumably due to surface diffusion. The blurring is studied as a function of the gap using dedicated stencils that allow a controlled variation of the gap. Our results show a linear relationship between the gap and the blurring of the directly deposited structure. In our configuration, with a material source of approximately 5 mm and a source-substrate distance of 1 m, we find that a gap size of approximately 10 microm enlarges the directly deposited structures by approximately 50 nm. The measured halo varies from 0.2 to 3 microm in width depending on the gap, the stencil aperture size and other deposition parameters. We also show that the blurring can be reduced by decreasing the nominal deposition thickness, the deposition rate and the substrate temperature.

  3. Materials for future lithography (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Chang, Seung Wook; Yang, Da; Dai, Junyan; Felix, Nelson; Bratton, Daniel; Tsuchiya, Kousuke; Kwark, Young-Je; Bravo-Vasquez, Juan-Pablo; Ober, Christopher K.; Cao, Heidi B.; Deng, Hai

    2005-05-01

    The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl

  4. X-ray lithography using holographic images

    DOEpatents

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  5. Smartphone Sensors for Stone Lithography Authentication

    PubMed Central

    Schirripa Spagnolo, Giuseppe; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to “authenticate” non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the “not original artwork” is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  6. Metal hierarchical patterning by direct nanoimprint lithography

    PubMed Central

    Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

    2013-01-01

    Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

  7. Proximity correction for electron beam lithography

    NASA Astrophysics Data System (ADS)

    Marrian, Christie R.; Chang, Steven; Peckerar, Martin C.

    1996-09-01

    As the critical dimensions required in mask making and direct write by electron beam lithography become ever smaller, correction for proximity effects becomes increasingly important. Furthermore, the problem is beset by the fact that only a positive energy dose can be applied with an electron beam. We discuss techniques such as chopping and dose shifting, which have been proposed to meet the positivity requirement. An alternative approach is to treat proximity correction as an optimization problem. Two such methods, local area dose correction and optimization using a regularizer proportional to the informational entropy of the solution, are compared. A notable feature of the regularized proximity correction is the ability to correct for forward scattering by the generation of a 'firewall' set back from the edge of a feature. As the forward scattering width increases, the firewall is set back farther from the feature edge. The regularized optimization algorithm is computationally time consuming using conventional techniques. However, the algorithm lends itself to a microelectronics integrated circuit coprocessor implementation, which could perform the optimization faster than even the fastest work stations. Scaling the circuit to larger number of pixels is best approached with a hybrid serial/parallel digital architecture that would correct for proximity effects over 108 pixels in about 1 h. This time can be reduced by simply adding additional coprocessors.

  8. Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Watkins, James

    2013-03-01

    Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

  9. Fabrication of phosphor micro-grids using proton beam lithography

    NASA Astrophysics Data System (ADS)

    Auzelyte, V.; Elfman, M.; Kristiansson, P.; Pallon, J.; Wegdén, M.; Nilsson, C.; Malmqvist, K.; Doyle, B. L.; Rossi, P.; Hearne, S. J.; Provencio, P. P.; Antolak, A. J.

    2006-01-01

    A new nuclear microscopy technique called ion photon emission microscopy or IPEM was recently invented. IPEM allows analysis involving single ions, such as ion beam induced charge (IBIC) or single event upset (SEU) imaging using a slightly modified optical microscope. The spatial resolution of IPEM is currently limited to more than 10 μm by the scattering and reflection of ion-induced photons, i.e. light blooming or spreading, in the ionoluminescent phosphor layer. We are developing a "Microscopic Gridded Phosphor" (also called Black Matrix) where the phosphor nanocrystals are confined within the gaps of a micrometer scale opaque grid, which limits the amount of detrimental light blooming. MeV-energy proton beam lithography is ideally suited to lithographically form masks for the grid because of high aspect ratio, pattern density and sub-micron resolution of this technique. In brief, the fabrication of the grids was made in the following manner: (1) a MeV proton beam focused to 1.5-2 μm directly fabricated a matrix of pillars in a 15 μm thick SU-8 lithographic resist; (2) 7:1 aspect ratio pillars were then formed by developing the proton exposed area; (3) Ni (Au) was electrochemically deposited onto Cu-coated Si from a sulfamate bath (or buffered CN bath); (4) the SU-8 pillars were removed by chemical etching; finally (5) the metal micro-grid was freed from its substrate by etching the underlying Cu layer. Our proposed metal micro-grids promise an order-of-magnitude improvement in the resolution of IPEM.

  10. 3D lithography by rapid curing of the liquid instabilities at nanoscale

    PubMed Central

    Coppola, Sara; Vespini, Veronica; Merola, Francesco; Finizio, Andrea; Ferraro, Pietro

    2011-01-01

    In liquids realm, surface tension and capillarity are the key forces driving the formation of the shapes pervading the nature. The steady dew drops appearing on plant leaves and spider webs result from the minimization of the overall surface energy [Zheng Y, et al. (2010) Nature 463:640–643]. Thanks to the surface tension, the interfaces of such spontaneous structures exhibit extremely good spherical shape and consequently worthy optical quality. Also nanofluidic instabilities generate a variety of fascinating liquid silhouettes, but they are however intrinsically short-lived. Here we show that such unsteady liquid structures, shaped in polymeric liquids by an electrohydrodynamic pressure, can be rapidly cured by appropriate thermal treatments. The fabrication of many solid microstructures exploitable in photonics is demonstrated, thus leading to a new concept in 3D lithography. The applicability of specific structures as optical tweezers and as novel remotely excitable quantum dots–embedded microresonators is presented. PMID:21896720

  11. Plasmonic Periodic Nanodot Arrays via Laser Interference Lithography for Organic Photovoltaic Cells with >10% Efficiency.

    PubMed

    Oh, Yulin; Lim, Ju Won; Kim, Jae Geun; Wang, Huan; Kang, Byung-Hyun; Park, Young Wook; Kim, Heejun; Jang, Yu Jin; Kim, Jihyeon; Kim, Dong Ha; Ju, Byeong-Kwon

    2016-11-22

    In this study, we demonstrate a viable and promising optical engineering technique enabling the development of high-performance plasmonic organic photovoltaic devices. Laser interference lithography was explored to fabricate metal nanodot (MND) arrays with elaborately controlled dot size as well as periodicity, allowing spectral overlap between the absorption range of the active layers and the surface plasmon band of MND arrays. MND arrays with ∼91 nm dot size and ∼202 nm periodicity embedded in a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hole transport layer remarkably enhanced the average power conversion efficiency (PCE) from 7.52% up to 10.11%, representing one of the highest PCE and degree of enhancement (∼34.4%) levels compared to the pristine device among plasmonic organic photovoltaics reported to date. The plasmonic enhancement mechanism was investigated by both optical and electrical analyses using finite difference time domain simulation and conductive atomic force microscopy studies.

  12. Cell projection use in maskless lithography for 45nm and 32nm logic nodes

    NASA Astrophysics Data System (ADS)

    Manakli, S.; Komami, H.; Takizawa, M.; Mitsuhashi, T.; Pain, L.

    2009-03-01

    Due to the ever-increasing cost of equipment and mask complexity, the use of optical lithography for integrated circuit manufacturing is increasingly more complex and expensive. Recent workshops and conferences in semiconductor lithography underlined that one alternative to support sub-32nm technologies is mask-less lithography option using electron beam technology. However, this direct write approach based on variable shaped beam principle (VSB) is not sufficient in terms of throughput, i.e. of productivity. New direct write techniques like multibeam systems are under development, but these solutions will not be mature before 2012. The use of character/cell projection (CP) on industrial VSB tools is the first step to deal with the throughput concerns. This paper presents the status of the CP technology and evaluates its possible use for the 45nm and 32nm logic nodes. It will present standard cell and SRAM structures that are printed as single characters using the CP technique. All experiments are done using the Advantest tool (F3000) which can project up to 100 different cells per layer. Cell extractions and design have been performed with the design and software solution developed by D2S. In this paper, we first evaluate the performance gain that can be obtained with the CP approach compared to the standard VSB approach. This paper also details the patterning capability obtained by using the CP concept. An evaluation of the CD uniformity and process stability is also presented. Finally this paper discusses about the improvements of this technique to address high resolution and to improve the throughput concerns.

  13. Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)

    NASA Astrophysics Data System (ADS)

    Jannesary, Reyhaneh; Bergmair, Iris; Zamiri, Saeid; Hingerl, Kurt; Hubbard, Graham; Abbott, Steven; Chen, Qin; Allsopp, Duncan

    2009-05-01

    The quest for mass replication has established technologies like nanoimprinting via hard stamps or PDMS stamps, where the stamps are usually produced via Electron Beam Lithography (EBL) for applications in the microelectronic industry. On the other hand, nanopatterning with self ordered structures1 or via holographic patterns provide the basis for large area imprints for applications for example, antireflection coatings based on biomimetic motheyes2. In this work we report on a technology for enabling the mass replication of custom-designed and e-beam lithographically prepared structures via establishing novel roll to roll nanoimprint processes for pattern transfer into UV curable pre-polymers. The new nano-fabrication technology is based on the concept of Disposal Master Technology (DMT) capable of patterning areas up to 1 x 1 m2 and is suitable for mass volume manufacturing of large area arrays of sub-wavelength photonic elements. As an example to show the potential of the application of the new nanoimprint technologies, we choose the fabrication of a photonic crystal (PhC) structure with integrated light coupling devices for low loss interconnection between PhC lightwave circuits and optical fibre systems. We present two methods for fabrication of nanoimprint lithography stamps in Si substrate. In the first method optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and then the pattern transfer into Si using reacting ion etching (RIE) with SF6 as etch gas. In the first method, we use 200nm of positive resist PMMA 950K for EBL exposure. In this method, resist thickness, exposure dose, development time and parameter for etching have been optimized and a photonic crystal of Si-rods in air was fabricated. In the second method lift-off has not been performed and metal mask has been used as master. The subsequent steps for fabricating the master will be presented in detail.

  14. Intelligent control system based on ARM for lithography tool

    NASA Astrophysics Data System (ADS)

    Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

    2014-08-01

    The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

  15. Fabrication of novel three-dimensional photonic crystals using multi-beam interference lithography

    NASA Astrophysics Data System (ADS)

    Ramanan, Vinayak

    Optical Communications has seen an explosion in recent times with new types of devices and materials. In the last decade, considerable study has been devoted to the control of the optical properties of materials and guiding the propagation of light through the use of photonic crystals. Photonic crystals are materials with a periodic arrangement of dielectric medium in one, two or three dimensions, with periodicities on the order of the wavelength of the electromagnetic radiation in use. Photonic crystals exhibit photonic band gaps depending on their geometry and refractive index. Holographic lithography has been proven to be an attractive technique for the creation of large area, defect-free, three-dimensional photonic crystals. Structures with potential in photonic applications are fabricated in the photoresist SU-8, through concurrent exposure with four non-coplanar coherent beams of laser radiation. Polymer-air structures with face centered cubic symmetry are used as a template to create higher refractive index contrast photonic crystals by infilling using Atomic Layer Deposition and Chemical Vapor Deposition. These photonic crystals exhibit excellent optical properties with strong reflectance peaks at the calculated band gap frequencies. Two-photon polymerization is used to demonstrate the ability to create designed defect structures such as waveguides in silicon-air photonic crystals. Genetic algorithms are demonstrated as a technique to design an interference lithography experiment. A four-beam setup with beams originating in opposite hemispheres and linear polarizations is found to generate a structure with diamond symmetry and a large complete photonic band gap. Band gap studies on structures that possess both high band gap and high contrast are performed. The optical setup for a diamond structure utilizing two right-angled prisms is discussed and promising experimental results are presented.

  16. Virtual mask digital electron beam lithography

    DOEpatents

    Baylor, Larry R.; Thomas, Clarence E.; Voelkl, Edgar; Moore, James A.; Simpson, Michael L.; Paulus, Michael J.

    1999-01-01

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made.

  17. Virtual mask digital electron beam lithography

    DOEpatents

    Baylor, L.R.; Thomas, C.E.; Voelkl, E.; Moore, J.A.; Simpson, M.L.; Paulus, M.J.

    1999-04-06

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made. 5 figs.

  18. Optics and multilayer coatings for EUVL systems

    SciTech Connect

    Soufli, R; Bajt, S; Hudyma, R M; Taylor, J S

    2008-03-21

    EUV lithography (EUVL) employs illumination wavelengths around 13.5 nm, and in many aspects it is considered an extension of optical lithography, which is used for the high-volume manufacturing (HVM) of today's microprocessors. The EUV wavelength of illumination dictates the use of reflective optical elements (mirrors) as opposed to the refractive lenses used in conventional lithographic systems. Thus, EUVL tools are based on all-reflective concepts: they use multilayer (ML) coated optics for their illumination and projection systems, and they have a ML-coated reflective mask.

  19. Thickness optimization for lithography process on silicon substrate

    NASA Astrophysics Data System (ADS)

    Su, Xiaojing; Su, Yajuan; Liu, Yansong; Chen, Fong; Liu, Zhimin; Zhang, Wei; Li, Bifeng; Gao, Tao; Wei, Yayi

    2015-03-01

    With the development of the lithography, the demand for critical dimension (CD) and CD uniformity (CDU) has reached a new level, which is harder and harder to achieve. There exists reflection at the interface between photo-resist and substrate during lithography exposure. This reflection has negative impact on CD and CDU control. It is possible to optimize the litho stack and film stack thickness on different lithography conditions. With the optimized stack, the total reflectivity for all incident angles at the interface can be controlled less than 0.5%, ideally 0.1%, which enhances process window (PW) most of the time. The theoretical results are verified by the experiment results from foundry, which helps the foundry achieve the mass production finally.

  20. Deconstructing contact hole CD printing variability in EUV lithography

    NASA Astrophysics Data System (ADS)

    Civay, D.; Wallow, T.; Doganaksoy, N.; Verduijn, E.; Schmid, G.; Mangat, P.

    2014-04-01

    Lithographic CD printing variability can be easily captured with a CDU measurement, however delineating the most significant sources causing the variability is challenging. In EUV lithography, the resist, reticle, metrology methodology, and stochastics are examples of factors that influence printing variability. Determining the most significant sources of variability in contact hole and via patterning is particularly interesting because the variability can be measured as a function of two tethered dimensions. Contact hole (CH) variability has a direct impact on device performance while via variability affects metal area scaling and design. By studying sources of variability opportunities for improving device performance and scaling can be identified. In this paper, we will examine sources of contact patterning variability in EUV lithography comprehensively using various EUV exposure tools as well as simulation methods. We will present a benchmark of current state of the art materials and patterning methods with the goal of assessing contact hole printability at the limit of 0.33 NA EUV lithography.

  1. Sequence-Specific Molecular Lithography on Single DNA Molecules

    NASA Astrophysics Data System (ADS)

    Keren, Kinneret; Krueger, Michael; Gilad, Rachel; Ben-Yoseph, Gdalyahu; Sivan, Uri; Braun, Erez

    2002-07-01

    Recent advances in the realization of individual molecular-scale electronic devices emphasize the need for novel tools and concepts capable of assembling such devices into large-scale functional circuits. We demonstrated sequence-specific molecular lithography on substrate DNA molecules by harnessing homologous recombination by RecA protein. In a sequence-specific manner, we patterned the coating of DNA with metal, localized labeled molecular objects and grew metal islands on specific sites along the DNA substrate, and generated molecularly accurate stable DNA junctions for patterning the DNA substrate connectivity. In our molecular lithography, the information encoded in the DNA molecules replaces the masks used in conventional microelectronics, and the RecA protein serves as the resist. The molecular lithography works with high resolution over a broad range of length scales from nanometers to many micrometers.

  2. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  3. Partitioning of Excess Energy in the Photolysis of ClCN and BrCN at 193 NM.

    DTIC Science & Technology

    1982-04-08

    7c orbital, and thus concluded that the upper state was a linear III system. Rabelais , et al (12), in a study of the electronic structure of sixteen...thea continuum corresponds to a (OA’ or IA") * XlE + ) transition. If Rabelais , et al are correct in their conclusion that the excited state is bent

  4. Coaxial Measurement of the Translational Distribution of CS Produced in the Laser Photolysis of CS2 at 193nm.

    DTIC Science & Technology

    1983-11-04

    IKasakawi, and R. Bersohn, J. Chemn. Phys. 72, 4058 (1980). *2. M.C. Addison, C.D. Bryne and R.J. Donovan, Chem. Phys. Letters, 64, 57 (1979). *3. J.E...population of CS2 fragments produced in processes: (a). CS2- + hV CS ( Z ,v" ) + S (3p) represented by 0; (b). CS2 + hv CS (X1 Z +,v") + S (1D...0 0 1 1 1 fl l i 0 z 0 - >0 -) p ~m 0 z D:O m l CCD X CA > 0__ -" -’ o- o 0 -0 "C 0 o 00 CL CL 0 0 -." - ’ .:.-:.- "- * -.5

  5. ILT for double exposure lithography with conventional and novel materials

    NASA Astrophysics Data System (ADS)

    Poonawala, Amyn; Borodovsky, Yan; Milanfar, Peyman

    2007-03-01

    Multiple paths exists to provide lithography solutions pursuant to Moore's Law for next 3-5 generations of technology, yet each of those paths inevitably leads to solutions eventually requiring patterning at k I < 0.30 and below. In this article, we explore double exposure single development lithography for k I >= 0.25 (using conventional resist) and k1 < 0.25 (using new out-of-sight out-of-mind materials). For the case of k I >= 0.25, we propose a novel double exposure inverse lithography technique (ILT) to split the pattern. Our algorithm is based on our earlier proposed single exposure ILT framework, and works by decomposing the aerial image (instead of the target pattern) into two parts. It also resolves the phase conflicts automatically as part of the decomposition, and the combined aerial image obtained using the estimated masks has a superior contrast. For the case of k I < 0.25, we focus on analyzing the use of various dual patterning techniques enabled by the use of hypothetic materials with properties that allow for the violation of the linear superposition of intensities from the two exposures. We investigate the possible use of two materials: contrast enhancement layer (CEL) and two-photon absorption resists. We propose a mathematical model for CEL, define its characteristic properties, and derive fundamental bounds on the improvement in image log-slope. Simulation results demonstrate that double exposure single development lithography using CEL enables printing 80nm gratings using dry lithography. We also combine ILT, CEL, and DEL to synthesize 2-D patterns with k I = 0.185. Finally, we discuss the viability of two-photon absorption resists for double exposure lithography.

  6. Effect of laser radiation wavelength and reepithelization process on optical quality of eye cornea after laser correction of vision

    SciTech Connect

    Kitai, M S; Semchishen, A V; Semchishen, V A

    2015-10-31

    The optical quality of the eye cornea surface after performing the laser vision correction essentially depends on the characteristic roughness scale (CRS) of the ablated surface, which is mainly determined by the absorption coefficient of the cornea at the laser wavelength. Thus, in the case of using an excimer ArF laser (λ = 193 nm) the absorption coefficient is equal to 39000 cm{sup -1}, the darkening by the dissociation products takes place, and the depth of the roughness relief can be as large as 0.23 mm. Under irradiation with the Er : YAG laser (λ = 2940 nm) the clearing is observed due to the rupture of hydrogen bonds in water, and the relief depth exceeds 1 μm. It is shown that the process of reepithelization that occurs after performing the laser vision correction leads to the improvement of the optical quality of the cornea surface. (interaction of laser radiation with matter)

  7. Studies of extreme ultraviolet emission from laser produced plasmas, as sources for next generation lithography

    NASA Astrophysics Data System (ADS)

    Cummins, Thomas

    The work presented in this thesis is primarily concerned with the optimisation of extreme ultraviolet (EUV) photoemission around 13.5 nm, from laser produced tin (Sn) plasmas. EUV lithography has been identified as the leading next generation technology to take over from the current optical lithography systems, due to its potential of printing smaller feature sizes on integrated circuits. Many of the problems hindering the implementation of EUV lithography for high volume manufacturing have been overcome during the past 20 years of development. However, the lack of source power is a major concern for realising EUV lithography and remains a major roadblock that must be overcome. Therefore in order to optimise and improve the EUV emission from Sn laser plasma sources, many parameters contributing to the make-up of an EUV source are investigated. Chapter 3 presents the results of varying several different experimental parameters on the EUV emission from Sn laser plasmas. Several of the laser parameters including the energy, gas mixture, focusing lens position and angle of incidence are changed, while their effect on the EUV emission is studied. Double laser pulse experiments are also carried out by creating plasma targets for the main laser pulse to interact with. The resulting emission is compared to that of a single laser pulse on solid Sn. Chapter 4 investigates tailoring the CO2 laser pulse duration to improve the efficiency of an EUV source set-up. In doing so a new technique for shortening the time duration of the pulse is described. The direct effects of shortening the CO2 laser pulse duration on the EUV emission from Sn are then studied and shown to improve the efficiency of the source. In Chapter 5 a new plasma target type is studied and compared to the previous dual laser experiments. Laser produced colliding plasma jet targets form a new plasma layer, with densities that can be optimised for re-heating with the main CO2 laser pulse. Chapter 6 will present

  8. The study of chromeless phase lithography (CPL) for 45nm lithography

    NASA Astrophysics Data System (ADS)

    Tan, Soon Yoeng; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2006-10-01

    Chromeless Phase Lithography (CPL) has been used to achieve high resolution by using phase edge interference in addition with high NA and off-axis illuminations such as annular and quasar for sub-wavelength lithography. There are two types of CPL. One is the totally chromeless pure phase type and the other is the zebra chrome pattern type for critical line dimensions. Both types of CPL masks require adding in chrome pads in some structures such as circuit line junction region to improve the resolution. Zebra type CPL mask making has reached the limitation due to small chrome peeling issue during mask cleaning and small space writing resolution issue for sub-45nm technology. In this paper, two types of CPL masks are studied. The investigation shows the differences on mask making and wafer performance. For mask making, process limitation studies such as writing, etching and cleaning will be evaluated. Data on mask CD (Critical Dimension) performance, registration, overlay, phase and transmission are collected and analyzed. For wafer performance, process window comparison, CD through pitch, MEEF (Mask Error Enhancement Factor) and linearity will be characterized for these two CPL mask types. Minimum resolution of less than 160nm pitch with reasonable good process window has been achieved with both mask types. Chromeless pure phase type has advantages on mask making while zebra type has the advantages on wafer performance. Furthermore, SRAF (Sub-Resolution Assist Feature) are added to improve wafer printing process windows. Detailed characterization work done on assist features are presented. Assist feature can improve process window by improving the contrast of isolated lines.

  9. A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography

    NASA Astrophysics Data System (ADS)

    Yoshizawa, Masaki; Savas, T. A.

    2002-01-01

    Patterns of 50 nm lines and spaces were demonstrated by low energy electron beam proximity lithography using 47-nm-thick poly methyl methacrylate (PMMA) and stencil masks fabricated by achromatic interference lithography (AIL). The result indicates the validity of the resolution analysis previously reported and the resolution capabilities of low energy electron beam proximity projection lithography (LEEPL) as a 50 nm node technology.

  10. Objective for EUV microscopy, EUV lithography, and x-ray imaging

    DOEpatents

    Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

    2016-05-03

    Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

  11. Calibration of exposure dose for nanoscale plasmonic lithography with microsized far-field spot patterns

    NASA Astrophysics Data System (ADS)

    Han, Dandan; Park, Changhoon; Jung, Howon; Hahn, Jae W.

    2016-09-01

    To improve the reliability of a plasmonic lithography system for nanoscale device fabrication, a rapid calibration process is essentially required. The calibration needs a time-consuming process using an atomic force microscope (AFM) to measure a number of nano-sized spot pattern widths recorded for the variation of the exposure dose. On the basis of the underlying mechanisms of a propagating field through a bowtie aperture, we conducted a theoretical study to derive a fitting equation to predict the widths of spot patterns in a near-field region compared with those in the far-field region. We obtained a calibration curve of the exposure dose to fit the width of spot pattern in the far-field region that is measureable using an optical microscope (OM). The validity of the rapid calibration process using an OM was verified by comparison between the calibration curves determined using AFM and OM, and the uncertainty between them was found to be 3.4%. The drift of the calibration curve was further explored to calculate the system stability of the plasmonic lithography technique, which was estimated to be  >93%. Furthermore, we also demonstrated that the calibration curve is effective in the prediction of the exposure dose for nanoscale line patterning.

  12. Direct-writing lithography using laser diode beam focused with single elliptical microlens

    NASA Astrophysics Data System (ADS)

    Hasan, Md. Nazmul; Haque, Muttahid-Ull; Trisno, Jonathan; Lee, Yung-Chun

    2015-10-01

    A lithography method is proposed for arbitrary patterning using an elliptically diverging laser diode beam focused with a single planoconvex elliptical microlens. Simulations are performed to model the propagation properties of the laser beam and to design the elliptical microlens, which has two different profiles in the x- and y-axis directions. The microlens is fabricated using an excimer laser dragging method and is then attached to the laser diode using double-sided optically cleared adhesive (OCA) tape. Notably, the use of OCA tape removes the need for a complicated alignment procedure and thus significantly reduces the assembly cost. The minimum focused spot of the laser diode beam is investigated by performing single-shot exposure tests on a photoresist (PR) layer. Finally, the practical feasibility of this lithography technique to generate an arbitrary pattern is demonstrated by dotted and continuous features through thin chromium layer deposition on PR and a metal lift-off process. The results show that the minimum feature size for the dotted patterns is around 6.23 μm, while the minimum linewidths for continuous patterns is 6.44 μm. In other words, the proposed focusing technique has significant potential for writing any arbitrary high-resolution pattern for applications like printed circuit board fabrication.

  13. Roughness and variability in EUV lithography: Who is to blame? (part 1)

    NASA Astrophysics Data System (ADS)

    Vaglio Pret, Alessandro; Gronheid, Roel; Younkin, Todd R.; Winroth, Gustaf; Biafore, John J.; Anno, Yusuke; Hoshiko, Kenji; Constantoudis, Vassilios

    2013-04-01

    Process variability in today's EUV lithography might be a showstopper for features below 27nm dimensions. At these feature sizes, electrical devices are influenced by quantum effects and thus have to face the discrete behavior of light and matter. More in general, lithography uncertainties arise from each lithographic element: the source, the photomask, the optical system, and the photoresist. In order to individually assess all the different contributions to the final resist roughness, a EUV mask with known absorber pattern variability was used to expose different resists at different process conditions. CD-SEM analyses were performed on both mask absorber and resist pattern and then used to build a stochastic resist model. In this first paper, we present a complete characterization of the root causes which are responsible of the CD nonuniformity for 27nm half-pitch dense contact-holes exposed with the ASML NXE:3100 scanner installed at imec. Using the same stochastic model, a simulated evaluation to quantify the possible impact of the different elements composing the lithographic process is performed at higher numerical aperture.

  14. Energetic-assisted scanning thermal lithography for patterning silver nanoparticles in polymer films.

    PubMed

    Huang, Chun-Min; Yeh, Chung-Hsien; Chen, Lung; Huang, De-An; Kuo, Changshu

    2013-01-01

    Energetic-assisted scanning thermal lithography (SThL) was demonstrated with the addition of benzoyl peroxide (BPO) for patterning silver nanoparticles. SThL samples were prepared by spin-coating poly(methyl methacrylate) (PMMA) thin films preloaded with BPO and silver nitrate precursors. Localized thermal analysis via probe heating demonstrated that the BPO decomposition in the polymer film took place at the temperature of 80 °C. Above this temperature, the thermal probe initiated the decomposition of the peroxide, which resulted in the in situ discharge of exothermal energy to compensate the joule shortage and the rapid cooling in the SThL thin film samples. The additional joule energy thermally enhanced the synthesis of silver nanoparticles, which were patterned and embedded in the PMMA thin film. Surface plasmon resonance scattering of these silver nanoparticles was observed by dark-field optical microscopy, whereas the nanoparticle distribution was examined by transmission electron microscopy. Variations in the scanning probe temperatures and peroxide concentrations were carefully investigated to optimize the thermal lithography efficiency upon the addition of energetics.

  15. Lifetime studies of Mo/Si and Mo/Be multilayer coatings for extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Wedowski, Marco; Bajt, Sasa; Folta, James A.; Gullikson, Eric M.; Kleineberg, Ulf; Klebanoff, Leonard E.; Malinowski, Michael E.; Clift, W. Miles

    1999-11-01

    Extreme Ultraviolet Lithography (EUVL) is a candidate for future application by the semiconductor industry in the production of sub-100 nm feature sizes in integrated circuits. Using multilayer reflective coatings optimized at wavelengths ranging from 11 to 14 nm, EUVL represents a potential successor to currently existing optical lithography techniques. In order to assess lifetimes of the multilayer coatings under realistic conditions, a series of radiation stability tests has been performed. In each run a dose of EUV radiation equivalent to several months of lithographic operation was applied to Mo/Si and Mo/Be multilayer coatings within a few days. Depending on the residual gas concentration in the vacuum environment, surface deposition of carbon during the exposure lead to losses in the multilayer reflectivity. However, in none of the experimental runs was structural damage within the bulk of the multilayers observed. Mo/Si multilayer coatings recovered their full original reflectivity after removal of the carbon layer by an ozone cleaning method. Auger depth profiling on Mo/Be multilayers indicate that carbon penetrated into the Be top layer during illumination with high doses of EUV radiation. Subsequent ozone cleaning fully removed the carbon, but revealed enhanced oxidation of the area illuminated, which led to an irreversible loss in reflectance on the order of 1%.

  16. Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

    NASA Astrophysics Data System (ADS)

    Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

    2006-03-01

    In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

  17. Capillary Force Lithography for Cardiac Tissue Engineering

    PubMed Central

    Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

    2014-01-01

    Cardiovascular disease remains the leading cause of death worldwide1. Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart’s extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale2. Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering3-5. A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling2. Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart6-9. Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)8 and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function10-14. Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively15,16. Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip and the PUA

  18. Nanoimprint lithography for functional polymer patterning

    NASA Astrophysics Data System (ADS)

    Cui, Dehu

    2011-07-01

    Organic semiconductors have generated huge interested in recent years for low-cost and flexible electronics. Current and future device applications for semiconducting polymers include light-emitting diodes, thin-film transistors, photovoltaic cells, photodetectors, lasers, and memories. The performance of conjugated polymer devices depends on two major factors: the chain conformation in polymer film and the device architecture. Highly ordered chain structure usually leads to much improved performance by enhancing interchain interaction to facilitate carrier transport. The goal of this research is to improve the performance of organic devices with the nanoimprint lithography. The work begins with the controlling of polymer chain orientation in patterned nanostructures through nanoimprint mold design and process parameter manipulation, and studying the effect of chain ordering on material properties. Then, step-and-repeat thermal nanoimprint technique for large-scale continuous manufacturing of conjugated polymer nanostructures is developed. After that, Systematic investigation of polymer chain configuration by Raman spectroscopy is carried out to understand how nanoimprint process parameters, such as mold pattern size, temperature, and polymer molecular weight, affects polymer chain configuration. The results indicate that chain orientation in nanoimprinted polymer micro- and nanostructures is highly related to the nanoimprint temperature and the dimensions of the mold structures. The ability to create nanoscale polymer micro- and nanostructures and manipulate their internal chain conformation establishes an original experimental platform that enables studying the properties of functional polymers at the micro- and nanoscale and understanding their fundamental structure-property relationships. In addition to the impact on basic research, the techniques developed in this work are important in applied research and development. Large-area conjugated polymer micro- and

  19. Pattern-integrated interference lithography: single-exposure fabrication of photonic-crystal structures.

    PubMed

    Burrow, Guy M; Leibovici, Matthieu C R; Gaylord, Thomas K

    2012-06-20

    Multibeam interference represents an approach for producing one-, two-, and three-dimensional periodic optical-intensity distributions with submicrometer features and periodicities. Accordingly, interference lithography (IL) has been used in a wide variety of applications, typically requiring additional lithographic steps to modify the periodic interference pattern and create integrated functional elements. In the present work, pattern-integrated interference lithography (PIIL) is introduced. PIIL is the integration of superposed pattern imaging with IL. Then a pattern-integrated interference exposure system (PIIES) is presented that implements PIIL by incorporating a projection imaging capability in a novel three-beam interference configuration. The purpose of this system is to fabricate, in a single-exposure step, a two-dimensional periodic photonic-crystal lattice with nonperiodic functional elements integrated into the periodic pattern. The design of the basic system is presented along with a model that simulates the resulting optical-intensity distribution at the system sample plane where the three beams simultaneously interfere and integrate a superposed image of the projected mask pattern. Appropriate performance metrics are defined in order to quantify the characteristics of the resulting photonic-crystal structure. These intensity and lattice-vector metrics differ markedly from the metrics used to evaluate traditional photolithographic imaging systems. Simulation and experimental results are presented that demonstrate the fabrication of example photonic-crystal structures in a single-exposure step. Example well-defined photonic-crystal structures exhibiting favorable intensity and lattice-vector metrics demonstrate the potential of PIIL for fabricating dense integrated optical circuits.

  20. Nanowell surface enhanced Raman scattering arrays fabricated by soft-lithography for label-free biomolecular detections in integrated microfluidics

    NASA Astrophysics Data System (ADS)

    Liu, Gang L.; Lee, Luke P.

    2005-08-01

    We describe a low-cost, ultrasensitive surface-enhanced Raman scattering (SERS) substrate in microfluidic biochips fabricated by soft lithography. A batch nanofabrication method is developed to create nanopillars structures on a silicon wafer as a master copy of molding, then the complementary nanowells structures on polydimethylsiloxane (PDMS) are created by soft lithography. The selective deposition of Ag thin film on the nanowells is applied to create SERS active sites before the integration with a glass-based microfluidic chip which functions as a sample delivery device and a transparent optical window for SERS spectroscopic imaging. Detections of Rhodamine 6G and adenosine SERS spectra are accomplished by using a 785nm laser with 300μW excitation power. The Raman scattering signal enhancement on the nanowell-based Ag SERS substrate is more than 107 times higher than the control sample (i.e. the smooth Ag layer on PDMS). Fabrication of ultrasensitive nanowell SERS substrate by economical and repeatable soft lithography method can contribute to the future microdevices for high throughput screening of functional genomics, proteomics, and cellular activities.