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Sample records for 193nm optical lithography

  1. Carbon dioxide gas purification and analytical measurement for leading edge 193nm lithography

    NASA Astrophysics Data System (ADS)

    Riddle Vogt, Sarah; Landoni, Cristian; Applegarth, Chuck; Browning, Matt; Succi, Marco; Pirola, Simona; Macchi, Giorgio

    2015-03-01

    The use of purified carbon dioxide (CO2) has become a reality for leading edge 193 nm immersion lithography scanners. Traditionally, both dry and immersion 193 nm lithographic processes have constantly purged the optics stack with ultrahigh purity compressed dry air (UHPCDA). CO2 has been utilized for a similar purpose as UHPCDA. Airborne molecular contamniation (AMC) purification technologies and analytical measurement methods have been extensively developed to support the Lithography Tool Manufacturers purity requirements. This paper covers the analytical tests and characterizations carried out to assess impurity removal from 3.0 N CO2 (beverage grade) for its final utilization in 193 nm and EUV scanners.

  2. Alternatives to chemical amplification for 193nm lithography

    NASA Astrophysics Data System (ADS)

    Baylav, Burak; Zhao, Meng; Yin, Ran; Xie, Peng; Scholz, Chris; Smith, Bruce; Smith, Thomas; Zimmerman, Paul

    2010-04-01

    Research has been conducted to develop alternatives to chemically amplified 193 nm photoresist materials that will be able to achieve the requirements associated with sub-32 nm device technology. New as well as older photoresist design concepts for non-chemically amplified 193 nm photoresists that have the potential to enable improvements in line edge roughness while maintaining adequate sensitivity, base solubility, and dry etch resistance for high volume manufacturing are being explored. The particular platforms that have been explored in this work include dissolution inhibitor photoresist systems, chain scissioning polymers, and photoresist systems based on polymers incorporating formyloxyphenyl functional groups. In studies of two-component acidic polymer/dissolution inhibitor systems, it was found that compositions using ortho-nitrobenzyl cholate (NBC) as the dissolution inhibitor and poly norbornene hexafluoro alcohol (PNBHFA) as the base resin are capable of printing 90 nm dense line/space patterns upon exposure to a 193 nm laser. Studies of chain scission enhancement in methylmethacrylate copolymers showed that incorporating small amounts of absorptive a-cleavage monomers significantly enhanced sensitivity with an acceptable increase in absorbance at 193 nm. Specifically, it was found that adding 3 mol% of α-methyl styrene (α-MS) reduced the dose to clear of PMMA-based resist from 1400 mJ/cm2 to 420 mJ/cm2. Preliminary data are also presented on a direct photoreactive design concept based on the photo-Fries reaction of formyloxyphenyl functional groups in acrylic copolymers.

  3. Extending photo-patternable low-κ concept to 193nm lithography and e-beam lithography

    NASA Astrophysics Data System (ADS)

    Lin, Qinghuang; Nelson, A.; Bozano, L.; Brock, P.; Cohen, S.; Davis, B.; Kwong, R.; Liniger, E.; Neumayer, D.; Rathore, J. S.; Shobha, H.; Sooriyakumaran, R.; Purushothaman, S.; Miller, R.; Allen, R.; Spooner, T.; Wisnieff, R.

    2011-04-01

    Increasing complexity and manufacturing costs, along with the fundamental limits of planar CMOS devices, threaten to slow down the historical pace of progress in the semiconductor industry. We have proposed and demonstrated proof-of-concept of a simple and low-cost way to fabricate dual-damascene copper (Cu) on-chip interconnect or Back-End-Of-the- Line (BEOL) structures using a novel multifunctional on-chip electrical insulator called a photo-patternable low dielectric constant (low-κ) dielectric (PPLK) material [Q. Lin, et al, Proc. SPIE, 2010]. This demonstration was accomplished with a silsesquioxane-based (SiCOH), κ=2.7 material which is compatible with 248 nm optical lithography. In this paper, we report on the extension of the photo-patternable low-κ concept to the ultra-low-κ (κ<2.5) regime and resolution down well below 100 nm with 193 nm lithography as well as e-beam lithography. We have accomplished this demonstration using the same silsesquioxane-based (SiCOH) material platform as that of the 248 nm photo-patternable low-κ materials. The 193 nm photo-patternable low-κ materials possess dielectric constants below 2.5 and are able to resolve 100 nm half-pith line/space features with dry 193 nm single exposure lithography. The resolution of photopatternable low-κ materials can be pushed down to 40 nm half-pith line and space features with a line-edge-roughness less than 3.0 nm with e-beam lithography.

  4. 193nm immersion lithography for high-performance silicon photonic circuits

    NASA Astrophysics Data System (ADS)

    Selvaraja, Shankar K.; Winroth, Gustaf; Locorotondo, Sabrina; Murdoch, Gayle; Milenin, Alexey; Delvaux, Christie; Ong, Patrick; Pathak, Shibnath; Xie, Weiqiang; Sterckx, Gunther; Lepage, Guy; Van Thourhout, Dries; Bogaerts, Wim; Van Campenhout, Joris; Absil, Philippe

    2014-04-01

    Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of <1% is achieved for both isolated (waveguides) and dense (grating) patterns in silicon. In addition to dimensional control, low sidewall roughness is a crucial to achieve low scattering loss in the waveguides. With this platform, optical propagation loss as low as ~0.7 dB/cm is achieved for high-confinement single mode waveguides (450x220nm). This is an improvement of >20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line

  5. A Comparison of Photoresist Resolution Metrics using 193 nm and EUV Lithography

    SciTech Connect

    Jones, Juanita; Pathak, Piyush; Wallow, Thomas; LaFontaine, Bruno; Deng, Yunfei; Kim, Ryoung-han; Kye, Jongwook; Levinson, Harry; Naulleau, Patrick; Anderson, Chris

    2007-08-20

    Image blur due to chemical amplification represents a fundamental limit to photoresist performance and manifests itself in many aspects of lithographic performance. Substantial progress has been made in linking image blur with simple resolution metrics using EUV lithography. In this presentation, they examine performance of 193 nm resist and EUV resist systems using modulation transfer function, corner rounding, and other resolution metrics. In particular, they focus on cross-comparisons in which selected EUV and 193 nm resist are evaluated using both EUV and 193 nm lithography. Simulation methods linking 193 nm and EUV performance will be described as well. Results from simulation indicate that image blur in current generation 193 nm photoresists is comparable to that of many EUV resists, but that ultra-low diffusion materials designs used in very high resolution EUV resists can result in substantially lower blur. In addition to detailing correlations between EUV and 193 nm experimental methods, they discuss their utility in assessing performance needs of future generation photoresists.

  6. Next-generation 193-nm laser for sub-100-nm lithography

    NASA Astrophysics Data System (ADS)

    Duffey, Thomas P.; Blumenstock, Gerry M.; Fleurov, Vladimir B.; Pan, Xiaojiang; Newman, Peter C.; Glatzel, Holger; Watson, Tom A.; Erxmeyer, J.; Kuschnereit, Ralf; Weigl, Bernhard

    2001-09-01

    The next generation 193 nm (ArF) laser has been designed and developed for high-volume production lithography. The NanoLithTM 7000, offering 20 Watts average output power at 4 kHz repetition rates is designed to support the highest exposure tool scan speeds for maximum productivity and wafer throughput. Fundamental design changes made to the laser core technologies are described. These advancements in core technology support the delivery of highly line-narrowed light with lithography, meeting specifications for bandwidth, dose stability (+/- 0.3% in 20 ms window) and wavelength stability (+/- 0.05 pm average line center error in 20 ms window) across 2 - 4 kHz repetition rates. Improvements in optical materials and coatings have led to increased lifetime of optics modules. Optimization of the discharge electrode design has increased chamber lifetime. Early life-testing indicates that the NanoLithTM core technologies have the potential for 400% reduction of cost of consumables as compared to its predecessor, the ELX-5000A and has been discussed elsewhere.

  7. Study of barrier coats for application in immersion 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Houlihan, Francis; Kim, Wookyu; Sakamuri, Raj; Hamilton, Keino; Dimerli, Alla; Abdallah, David; Romano, Andrew; Dammel, Ralph R.; Pawlowski, Georg; Raub, Alex; Brueck, Steve

    2005-05-01

    We will describe our barrier coat approach for use in immersion 193 nm lithography. These barrier coats may act as either simple barriers providing protection against loss of resist components into water or in the case of one type of these formulations which have a refractive index at 193 nm which is the geometric mean between that of the resist and water provide, also top antireflective properties. Either type of barrier coat can be applied with a simple spinning process compatible with PGMEA based resin employing standard solvents such as alcohols and be removed during the usual resist development process with aqueous 0.26 N TMAH. We will discuss both imaging results with these materials on acrylate type 193 nm resists and also show some fundamental studies we have done to understand the function of the barrier coat and the role of differing spinning solvents and resins. We will show LS (55 nm) and Contact Hole (80 nm) resolved with a 193 nm resist exposed with the interferometric tool at the University of New Mexico (213 nm) with and without the use of a barrier coat.

  8. Chemical trimming overcoat: an enhancing composition and process for 193nm lithography

    NASA Astrophysics Data System (ADS)

    Liu, Cong; Rowell, Kevin; Joesten, Lori; Baranowski, Paul; Kaur, Irvinder; Huang, Wanyi; Leonard, JoAnne; Jeong, Hae-Mi; Im, Kwang-Hwyi; Estelle, Tom; Cutler, Charlotte; Pohlers, Gerd; Yin, Wenyan; Fallon, Patricia; Li, Mingqi; Jeon, Hyun; Xu, Cheng Bai; Trefonas, Pete

    2016-03-01

    As the critical dimension of devices is approaching the resolution limit of 193nm photo lithography, multiple patterning processes have been developed to print smaller CD and pitch. Multiple patterning and other advanced lithographic processes often require the formation of isolated features such as lines or posts by direct lithographic printing. The formation of isolated features with an acceptable process window, however, can pose a challenge as a result of poor aerial image contrast at defocus. Herein we report a novel Chemical Trimming Overcoat (CTO) as an extra step after lithography that allows us to achieve smaller feature size and better process window.

  9. Front-end-of-line process development using 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan K.; Ercken, Monique; Eliat, Astrid; Delvaux, Christie; Jaenen, Patrick; Ronse, Kurt G.

    2001-04-01

    It is expected that 193nm lithography will be introduced in front-end-of-line processing for all critical layers at the 100nm node, and possibly also for some layers at the 130nm node, where critical layers are required to have the lowest mask cost. These processes are currently being investigated at IMEC for CMOS logic applications. While the lithographic performance of 193 nm resists has improved significantly in the last year, most materials still have important processing issues that need further improvement. On one hand, the resists material itself suffers from for example poor dry etch resistance and SEM CD shrinkage. On the other hand, interaction with other materials such as SiON inorganic ARCs becomes more challenging in terms of footing behavior, adhesion, and line edge roughness. In this paper, the 193nm processing experience gained at IMEC will be outlined, as well as solutions for manufacturability. Front- end-of-line integration results will also be shown, mainly for gate applications. It will be demonstrated that currently several commercial resist are capable of printing 130nm gates within the +/- 10 percent CD tolerance, even after gate etch. The impact of line edge roughness will also be discussed. Finally, the feasibility of printing 100nm logic patterns using only binary masks has been demonstrated, including gate etch.

  10. Inspection of advanced computational lithography logic reticles using a 193-nm inspection system

    NASA Astrophysics Data System (ADS)

    Yu, Ching-Fang; Lin, Mei-Chun; Lai, Mei-Tsu; Hsu, Luke T. H.; Chin, Angus; Lee, S. C.; Yen, Anthony; Wang, Jim; Chen, Ellison; Wu, David; Broadbent, William H.; Huang, William; Zhu, Zinggang

    2010-09-01

    We report inspection results of early 22-nm logic reticles designed with both conventional and computational lithography methods. Inspection is performed using a state-of-the-art 193-nm reticle inspection system in the reticleplane inspection mode (RPI) where both rule-based sensitivity control (RSC) and a newer modelbased sensitivity control (MSC) method are tested. The evaluation includes defect detection performance using several special test reticles designed with both conventional and computational lithography methods; the reticles contain a variety of programmed critical defects which are measured based on wafer print impact. Also included are inspection results from several full-field product reticles designed with both conventional and computational lithography methods to determine if low nuisance-defect counts can be achieved. These early reticles are largely single-die and all inspections are performed in the die-to-database inspection mode only.

  11. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  12. Extremely long life and low-cost 193nm excimer laser chamber technology for 450mm wafer multipatterning lithography

    NASA Astrophysics Data System (ADS)

    Tsushima, Hiroaki; Katsuumi, Hisakazu; Ikeda, Hiroyuki; Asayama, Takeshi; Kumazaki, Takahito; Kurosu, Akihiko; Ohta, Takeshi; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2014-04-01

    193nm ArF excimer lasers are widely used as light sources for the lithography process of semiconductor production. 193nm ArF exicmer lasers are expected to continue to be the main solution in photolithography, since advanced lithography technologies such as multiple patterning and Self-Aligned Double Patterning (SADP) are being developed. In order to apply these technologies to high-volume semiconductor manufacturing, the key is to reduce the total operating cost. To reduce the total operating cost, life extension of consumable part and reduction of power consumption are an important factor. The chamber life time and power consumption are a main factor to decide the total operating cost. Therefore, we have developed the new technology for extension of the chamber life time and low electricity consumption. In this paper, we will report the new technology to extend the life time of the laser chamber and to reduce the electricity consumption.

  13. Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

    SciTech Connect

    Rao, V.; Hutchinson, J.; Holl, S.; Langston, J.; Henderson, C.; Wheeler, D.R.; Cardinale, G.; OConnell, D.; Goldsmith, J.; Bohland, J.; Taylor, G.; Sinta, R.

    1998-11-01

    The maturity and acceptance of top surface imaging (TSI) technology have been hampered by several factors including inadequate resist sensitivity and line edge roughness. We have found that the use of a chemically amplified resist can improve the sensitivity in these systems by 1.5{endash} 2{times} without compromising the line edge roughness. In addition, we have shown improved line edge roughness by increasing the molecular weight of the polymeric resin in the resist. Using these materials approaches, we have been able to show excellent resolution images with the TSI process for both 193 nm and extreme ultraviolet (13.4 nm) patterning. {copyright} {ital 1998 American Vacuum Society.}

  14. Double-exposure materials for pitch division with 193nm lithography: requirements, results

    NASA Astrophysics Data System (ADS)

    Bristol, Robert; Shykind, David; Kim, Sungwon; Borodovsky, Yan; Schwartz, Evan; Turner, Courtney; Masson, Georgeta; Min, Ke; Esswein, Katherine; Blackwell, James M.; Suetin, Nikolay

    2009-03-01

    We present the results of both theoretical and experimental investigations of materials for application either as a reversible Contrast Enhancement Layer (rCEL) or a Two-Stage PAG. The purpose of these materials is to enable Litho- Litho-Etch (LLE) patterning for Pitch Division (PD) at the 16nm logic node (2013 Manufacturing). For the rCEL, we find from modeling using an E-M solver that such a material must posses a bleaching capability equivalent to a Dill A parameter of greater than 100. This is at least a factor of ten greater than that achieved so far at 193nm by any usable organic material we have tested. In the case of the Two-Stage PAG, analytical and lithographic modeling yields a usable material process window, in terms of reversibility and two-photon vs. one-photon acid production rates (branching ratio). One class of materials, based on the cycloadduct of a tethered pair of anthracenes, has shown promise under testing at 193nm in acetonitrile. Sufficient reversibility without acid production, enabled by near-UV exposure, has been achieved. Acid production as a function of dose shows a clear quadratic component, consistent with a branching ratio greater than 1. The experimental data also supports a acid contrast value of approximately 0.05 that could in principle be obtained with this molecule under a pitch division double-exposure scenario.

  15. Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning

    NASA Astrophysics Data System (ADS)

    Chiu, M. C.; Lin, Benjamin Szu-Min; Tsai, M. F.; Chang, Y. S.; Yeh, M. H.; Ying, T. H.; Ngai, Chris; Jin, Jaklyn; Yuen, Stephen; Huang, Sem; Chen, Yongmei; Miao, Liyan; Tai, Kevin; Conley, Amiad; Liu, Ian

    2008-11-01

    High NA (1.35) Immersion litho runs into the fundamental limit of printing at 40-45nm half pitch (HP). The next generation EUVL tool is known to be ready not until year 2012. Double patterning (DP) technology has been identified as the extension of optical photolithography technologies to 3xnm and 2xnm half-pitch for the low k1 regime to fill in the gap between Immersion lithography and EUVL. Self Aligned Double Patterning (SADP) Technology utilized mature process technology to reduce risk and faster time to market to support the continuation of Moore's Law of Scaling to reduce the cost/function. SADP uses spacer to do the pitch splitting bypass the conventional double patterning (e.g. Litho-Freeze-Litho-Etch (LFLE), or Litho-Etch-Litho-Etch (LELE)) overlay problem. Having a tight overlay performance is extremely critical for NAND Flash manufacturers to achieve a fast yield ramp in production. This paper describes the challenges and accomplishment of a Line-By-Spacer (LBS) SADP scheme to pattern the 29nm half-pitch NAND Flash STI application. A 193nm Dry lithography was chosen to pattern on top of the amorphous carbon (a-C) film stack. The resist pattern will be transferred on the top a-C core layer follow by spacer deposition and etch to achieve the pitch splitting. Then the spacer will be used to transfer to the bottom a-C universal hardmask. This high selectivity a-C hardmask will be used to transfer the 29nm half-pitch pattern to the STI. Good within wafer CD uniformity (CDU) <2nm and line width roughness (LWR) <2nm for the 29nm half-pitch NAND FLASH STI were demonstrated as the benefits using double amorphous carbon hardmask layers. The relationships among the photoresist CDs, CD trimming , as-deposited spacer film thickness, spacer width and the final STI line/core space/gap space CDs will also be discussed in this paper since patterning is combining both lithography performance with CVD and Etch process performance. Film selection for amorphous carbon and

  16. Minimizing wafer defectivity during high-temperature baking of organic films in 193nm lithography

    NASA Astrophysics Data System (ADS)

    Randall, Mai; Longstaff, Christopher; Ueda, Kenichi; Nicholson, Jim; Winter, Thomas

    2006-03-01

    Demands for continued defect reduction in 300mm IC manufacturing is driving process engineers to examine all aspects of the apply process for improvement. Process engineers, and their respective tool sets, are required to process films at temperatures above the boiling point of the casting solvents. This can potentially lead to the sublimation of the film chemical components. The current methods used to minimize wafer defectivity due to bake residues include frequent cleaning of bake plate modules and surrounding equipment, process optimization, and hardware improvements until more robust chemistries are available. IBM has evaluated the Tokyo Electron CLEAN TRACK TM ACT TM 12 high exhaust high temperature hotplate (HHP) lid to minimize wafer level contamination due to the outgasing of a bottom anti-reflective coating (BARC) films during the high temperature bake process. Goal was to minimize airborne contamination (particles in free space), reduce hotplate contamination build up, and ultimately reduce defects on the wafer. This evaluation was performed on a 193nm BARC material. Evaluation data included visual hardware inspections, airborne particle counting, relative thickness build up measurements on hotplate lids, wafer level defect measurements, and electrical open fail rate. Film coat thickness mean and uniformity were also checked to compare the high exhaust HHP with the standard HHP lid. Chemical analysis of the HHP module residue was performed to identify the source material. The work will quantify potential cost savings achieved by reducing added wafer defects during processing and extending PM frequency for equipment cleaning.

  17. AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography

    NASA Astrophysics Data System (ADS)

    Noelscher, Christoph; Henkel, Thomas; Jauzion-Graverolle, Franck; Hennig, Mario; Morgana, Nicolo; Schlief, Ralph; Moukara, Molela; Koehle, Roderick; Neubauer, Ralf

    2008-03-01

    To avoid expensive immersion lithography and to further use existing dry tools for critical contact layer lithography at 4Xnm DRAM nodes the application of altPSM is investigated and compared to attPSM. Simulations and experiments with several test masks showed that by use of altPSM with suitable 0°/180° coloring and assist placement 30nm smaller contacts can be resolved through pitch with sufficient process windows (PW). This holds for arrays of contacts with variable lengths through short and long side pitches. A further benefit is the lower mask error enhancement factor (MEEF). Nevertheless 3D mask errors (ME) consume benefits in the PW and the assist placement and coloring of the main features (MF) put some constraints on the chip design. An altPSM compatible 4Xnm full-chip layout was realized without loss of chip area. Mask making showed very convincing results with respect to CDU, etch depth uniformity and defectiveness. The printed intra-field CD uniformity was comparable to attPSM despite the smaller target CDs. Room for improvement is identified in OPC accuracy and in automatic assist placement and sizing.

  18. A comparative study for mask defect tolerance on phase and transmission for dry and immersion 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Ling, Moh Lung; Chua, Gek Soon; Tay, Cho Jui; Quan, Chenggen; Lin, Qunying

    2007-03-01

    193nm immersion lithography has successfully enabled numerical aperture (NA) greater than 1.0 which allows rooms for improvement in resolution as well as depth of focus. In this study, critical dimension (CD) and depth of focus (DOF) performance for the 45nm technology node for dry and immersion lithography is compared using commercial available simulation tool. The study is based on one dimensional line and space pattern with pitch vary from 150 to 500nm. The effects of mask transmission and phase angle change on CD through pitch performance and DOF are also presented in this paper. Increase in mask transmission will result in increase of CD through pitch and reduction of DOF. When phase angle for the phase shift mask is less than 180 degree, CD through pitch and DOF drop. Finally, mask defects caused by haze on several locations which include MoSi lines, line edges, and space between line ends are simulated. The influence of these defects on CD and the potential line end bridging problem is presented.

  19. Development of high-performance negative-tone resists for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Hattori, Takashi; Yokoyama, Yoshiyuki; Kimura, Kaori; Yamanaka, Ryoko; Tanaka, Toshihiko; Fukuda, Hiroshi

    2003-06-01

    We have been developing negative-tone resist systems utilizing an acid-catalyzed intramolecular esterification of γ- and δ-hydroxy acid for ArF phase-shifting lithography. In this paper, α-acryloyloxy-β, β-dimethyl-γ-butyrolactone (DBLA), adamantane lactone acrylate (AdLA), and norbornene lactone acrylate (NLA) were examined as a precursor of hydroxy acid. It was found that AdLA and NLA are not hydrolyzed intro hydroxy acid under an alkali hydrolysis condition. DBLA was found to produce γ-hydroxy acid, which is stable in the resist solution. The γ-hydroxy acid derived from DBLA becomes γ-lactone relatively easily by an acid-catalyzed reaction and can be used to make resists insoluble. Since the variation and the flexibility of the copolymer composition of the base polymer can be increased, the resist properties are controllable and the pattern quality can be improved by utilizing γ-hydroxy acid derived from DBLA.

  20. Low leaching and low LWR photoresist development for 193 nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ando, Nobuo; Lee, Youngjoon; Miyagawa, Takayuki; Edamatsu, Kunishige; Takemoto, Ichiki; Yamamoto, Satoshi; Tsuchida, Yoshinobu; Yamamoto, Keiko; Konishi, Shinji; Nakano, Katsushi; Tomoharu, Fujiwara

    2006-03-01

    receding contact angle become very important issue for not only defectivity but also scanner throughput. Some of our experimental results along this line of study are also included in the report. The last topic covered is LWR (Line Width Roughness) as an essential leverage for performance improvement, especially for the smaller CD that immersion lithography is aiming to define. Our recent effort to find effect and working concept to reduce LWR with low leaching materials is also described.

  1. Determination of complex index of immersion liquids at 193 nm

    NASA Astrophysics Data System (ADS)

    Stehle, Jean-Louis; Piel, Jean-Philippe; Campillo-Carreto, Jose

    2006-03-01

    The next nodes in immersion lithography will require the scanners to use the 193 nm ArF* laser line with a very large numerical aperture and a liquid between the optics and the resist. (1) Immersion lithography at 193 nm requests very specific parameters for the fluid. The first generation is using the deionized Water (DIW) very pure and not recycled, but when a new optical material for the last lens will be available with a refractive index (RI) larger than 1.85, a higher refractive index fluid could be used, enabling second and maybe third generation of immersion lithography at 193 nm. So the 45 and maybe the 32 nm nodes could be covered with this high Index fluids (HIF).

  2. A thick CESL stressed ultra-small (Lg=40-nm) SiGe-channel MOSFET fabricated with 193-nm scanner lithography and TEOS hard mask etching

    NASA Astrophysics Data System (ADS)

    Liao, Wen-Shiang; Chen, Tung-Hung; Lin, Hsin-Hung; Chang, Wen-Tung; Shih, Tommy; Tsen, Huan-Chiu; Chung, Lee

    2007-03-01

    A 100Å-thick SiGe (22.5%) channel MOSFET with gate length down to 40nm has been successfully integrated with 14Å nitrided gate oxide as well as a 1200Å high-compressive PECVD ILD-SiNx stressing layer as the contact etching stop layer (CESL) that enhances the PMOS electron mobility with +33% current gain. To achieve a poly-Si gate length target of 400Å (40nm), a 193nm scanner lithography and an aggressive oxide hard mask etching techniques were used. First, a 500Å-thick TEOS hard mask layer was deposited upon the 1500Å-thick poly-Si gate electrode. Second, both 1050Å-thick bottom anti-reflective coating (BARC) and 2650Å-thick photoresist (P/R) were coated and a 193nm scanner lithography tool was used for the gate layout patterning with nominal logic 90nm exposure energy. Then, a deep sub-micron plasma etcher was used for an aggressive P/R and BARC trimming down processing and the TEOS hard mask was subsequently plasma etched in another etching chamber without breaking the plasma etcher's vacuum. Continuously, the P/R and BARC were removed with a plasma ashing and RCA cleaning. Moreover, the patterned Si-fin capping oxide can be further trimmed down with a diluted HF (aq) solution (DHF) while rendering the RCA cleaning process and the remained TEOS hard mask is still thick enough for the subsequent poly-Si gate main etching. Finally, an ultra narrow poly-Si gate length of 40nm with promising PMOS drive current enhancement can be formed through a second poly-Si etching, which is above the underneath SiGe (22.5%) conduction channel as well as its upper 14Å-thick nitrided gate oxide.

  3. Novel spin-coating technology for 248-nm/193-nm DUV lithography and low-k spin on dielectrics of 200-mm/300-mm wafers

    NASA Astrophysics Data System (ADS)

    Gurer, Emir; Zhong, Tom X.; Lewellen, John W.; Lee, Ed C.

    2000-06-01

    An alternative coating technology was developed for 248 nm/193 nm DUV lithography and low-k spin on dielectric (SOD) materials used in the interconnect area. This is a 300 mm enabling technology which overcomes turbulent flow limitations above 2000 rpm and it prevents 40 - 60% reduction on the process latitudes of evaporation-related variables, common to 300 mm conventional coaters. Our new coating technology is fully enclosed and it is capable of controlling the solvent concentration above the resist film dynamically in the gas phase. This feature allows a direct control of the evaporation mass transfer which determines the quality of the final resist profiles. Following process advantages are reported in this paper: (1) Demonstrated that final resist film thickness can be routinely varied by 4000 angstrom at a fixed drying spin speed, thus minimizing the impact of turbulence wall for 300 mm wafers. (2) Evaporation control allows wider range of useful thickness from a fixed viscosity material. (3) Latitudes of evaporation-related process variables is about 40% larger than that of a conventional coater. (4) Highly uniform films of 0.05% were obtained for 8800 angstrom target thickness with tighter wafer-wafer profile control because of the enclosed nature of the technology. (5) Dynamic evaporation control facilitates resist consumption minimization. Preliminary results indicate feasibility of a 0.4 cc process of record (POR) for a 200 mm substrate. (6) Lower COO due to demonstrated relative insensitivity to environmental variables, robust resist consumption minimization and superior process capabilities. (7) Improved planarization and gap fill properties for the new generation photoresist/low-k SOD materials deposited using this enclosed coating technology.

  4. Negative-tone 193-nm resists

    NASA Astrophysics Data System (ADS)

    Cho, Sungseo; Vander Heyden, Anthony; Byers, Jeff D.; Willson, C. Grant

    2000-06-01

    A great deal of progress has been made in the design of single layer positive tone resists for 193 nm lithography. Commercial samples of such materials are now available from many vendors. The patterning of certain levels of devices profits from the use of negative tone resists. There have been several reports of work directed toward the design of negative tones resists for 193 nm exposure but, none have performed as well as the positive tone systems. Polymers with alicyclic structures in the backbone have emerged as excellent platforms from which to design positive tone resists for 193 nm exposure. We now report the adaptation of this class of polymers to the design of high performance negative tone 193 nm resists. New systems have been prepared that are based on a polarity switch mechanism for modulation of the dissolution rate. The systems are based on a polar, alicyclic polymer backbone that includes a monomer bearing a glycol pendant group that undergoes the acid catalyzed pinacol rearrangement upon exposure and bake to produce the corresponding less polar ketone. This monomer was copolymerized with maleic anhydride and a norbornene bearing a bis-trifluoromethylcarbinol. The rearrangement of the copolymer was monitored by FT-IR as a function of temperature. The synthesis of the norbornene monomers will be presented together with characterization of copolymers of these monomers with maleic anhydride. The lithographic performance of the new resist system will also be presented.

  5. EUV reticle inspection with a 193nm reticle inspector

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Inderhees, Gregg; Yamamoto, Tetsuya; Lee, Isaac; Lim, Phillip

    2013-06-01

    The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the 2015 - 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL into HVM - blank and reticle defects are among the top items. To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm wavelength reticle inspection system - the Teron 610 Series (2010). This system has become the industry standard for 22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV blank and reticle inspection in R and D. To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for currently available 14nm / 2xhp generation EUV reticles. As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify areas for further improvement with the goal to be ready for pilot lines in early 2015.

  6. Feasibility study of optical/e-beam complementary lithography

    NASA Astrophysics Data System (ADS)

    Hohle, Christoph; Choi, Kang-Hoon; Freitag, Martin; Gutsch, Manuela; Jaschinsky, Philipp; Kahlenberg, Frank; Klein, Christof; Klikovits, Jan; Paul, Jan; Rudolph, Matthias; Thrun, Xaver

    2012-03-01

    Using electron beam direct write (EBDW) as a complementary approach together with standard optical lithography at 193nm or EUV wavelength has been proposed only lately and might be a reasonable solution for low volume CMOS manufacturing and special applications as well as design rule restrictions. Here, the high throughput of the optical litho can be combined with the high resolution and the high flexibility of the e-beam by using a mix & match approach (Litho- Etch-Litho-Etch, LELE). Complementary Lithography is mainly driven by special design requirements for unidirectional (1-D gridded) Manhattan type design layouts that enable scaling of advanced logic chips. This requires significant data prep efforts such as layout splitting. In this paper we will show recent results of Complementary Lithography using 193nm immersion generated 50nm lines/space pattern addressing the 32nm logic technology node that were cut with electron beam direct write. Regular lines and space arrays were patterned at GLOBALFOUNDRIES Dresden and have been cut in predefined areas using a VISTEC SB3050DW e-beam direct writer (50KV Variable Shaped Beam) at Fraunhofer Center Nanoelectronic Technologies (CNT), Dresden, as well as on the PML2 tool at IMS Nanofabrication, Vienna. Two types of e-beam resists were used for the cut exposure. Integration issues as well as overlay requirements and performance improvements necessary for this mix & match approach will be discussed.

  7. Lithography optics: its present and future

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koichi; Mori, Takashi

    1998-09-01

    Firstly, various technical aspects of ArF optics are surveyed. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source for optical lithography. Discussions are ranging over some critical issues of ArF optics. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown. Secondly, estimated are the future trend regarding minimum geometry and the optical parameters, such as numerical aperture and wavelength. For the estimation, simulations based on aerial images are performed, where in the resolution limit is defined as a minimum feature size which retains practical depth of focus. Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser ((λ =248 nm), ArF excimer laser (λ =193 nm) and F2 excimer laser (λ =157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength.

  8. Absolute measurements of nonlinear absorption near LIDT at 193 nm

    NASA Astrophysics Data System (ADS)

    Blaschke, Holger; Ristau, Detlev; Welsch, Eberhard; Apel, Oliver

    2001-04-01

    Previous investigations indicate that oxide coatings exhibit non-linear absorption phenomena below 200 nm. Hereby, absorption data of Al2O3 thin film coatings has been determined absolutely by laser calorimetry (LCA) at 193 nm in the low fluence regime. As an alternative, on the basis of the pulsed surface thermal lens technique (STL), photothermal measurements allow to determine the absorption relatively at fluence levels both in the subdamage fluence range far from the damage onset and close to the LIDT. By combining the two measurement techniques, the absolute determination of linear as well as multiphoton absorption can be achieved also in the vicinity of the laser damage fluences. This is of crucial interest because the initiation of damage onset can be observed immediately. Absolute absorption data of Al2O3 coatings at different laser fluences stating of some mJoule/cm2 will be presented for the wavelength 193 nm. Thus, the correlation between the increase of absorption and the onset of breakdown can be illustrated impressively. The evaluation and discussion of the experimental results are focused on the degree of non-linearity of the investigated absorption behavior of oxide single layers initiating the optical breakdown of UV oxide coatings.

  9. Photodissociation of Methyl Iodide at 193 NM

    NASA Astrophysics Data System (ADS)

    Xu, Hong; Pratt, Stephen

    2014-05-01

    A new measurement of the photodissociation of CH3I at 193 nm is reported in which we use a combination of vacuum ultraviolet photoionization and velocity map ion imaging. The iodine photofragments are probed by single-photon ionization at photon energies above and below the photoionization threshold of I(2P3/2) . The relative I(2P3/2) and I*(2P1/2) photoionization cross sections are determined at these wavelengths by using the known branching fractions for the photodissociation at 266 nm. Velocity map ion images indicate that the branching fraction for I(2P3/2) atoms is non-zero, and yield a value of 0.07 +/- 0.01. Interestingly, the translational energy distribution extracted from the image shows that the translational energy of the I(2P3/2) fragments is significantly smaller than that of the I*(2P1/2) atoms. This observation indicates the internal rotational/vibrational energy of the CH3 co-fragment is very high in the I(2P3/2) channel. The results can be interpreted in a manner consistent with the previous measurements, and provide a more complete picture of the dissociation dynamics of this prototypical molecule. This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences, and Biosciences under contract No. DE-AC02-06CH11357.

  10. 193-nm photoresist development at Union Chemical Labs., ITRI

    NASA Astrophysics Data System (ADS)

    Fang, Mao-Ching; Chang, Jui-Fa; Tai, Ming-Chia; Lin, Tzu-Yu; Liu, Ting-Chung; Liu, Chien-Hung

    2000-06-01

    Union Chemical Laboratories has designed and synthesized novel copolymers of norbornene-alt-derivatives, maleic anhydride and alicyclic acrylate for ArF excimer laser lithography. These polymers are prepared using a free-radical copolymerization process. Applying the resin for 193-nm single layer chemically amplified photoresist composed of cholate derivative with a PAG leads to a good resolution below 0.13 micrometer line/space patterns using an ArF stepper and 2.38 wt% tetramethylammonium hydroxide aqueous solution as a developer. Furthermore, alternating phase shift mask was used in combination with a feature size as small as 0.1 micrometer. To overcome post exposure delay (PED) effect caused by airborne contamination, three new base additives were used in the resist formulation. The etching-resist ability of resists by reaction ion etching (RIE) was showed better than conventional g-line and KrF excimer laser resists. Experimental results of CHF3/CF4 as etch gas, indicate that the etching rate selectivity with respect to SiO2 is about 0.5. The UCL photoresists also showed good shelf life stability.

  11. A new high-aperture 193 nm microscope for the traceable dimensional characterization of micro- and nanostructures

    NASA Astrophysics Data System (ADS)

    Ehret, G.; Pilarski, F.; Bergmann, D.; Bodermann, B.; Buhr, E.

    2009-08-01

    A new deep UV transmission microscope for traceable micro- and nanometrology is currently being set up at the Physikalisch-Technische Bundesanstalt (PTB), the National Metrology Institute of Germany. The new microscope is especially designed to enable linewidth measurements of micro- and nanostructures with an unsurpassed absolute measurement uncertainty of down to 10 nm (95% confidence interval). The optical resolution is about 100 nm. The main field of this tool will be critical dimension (CD) metrology of photomasks used in optical lithography. In particular, this system offers the possibility of 'at-wavelength' metrology for the currently applied 193 nm lithography technology. The high lateral resolution will be attained by means of 193 nm excimer laser radiation for illumination in conjunction with a high-aperture objective (NA = 0.9). The illumination and imaging system will provide various imaging modalities, ranging from ordinary brightfield to specially structured illumination schemes. Traceability to the SI unit 'meter' will be accomplished by means of laser interferometry. The mechanical set-up is characterized by an ultra-stable bridge construction on a granite base and has been designed with special emphasis on realizing a positioning stability in the nanometer range. The instrument is being set up in the Clean Room Centre of the PTB and will be ready for operation in mid 2009. Simulation calculations, based on a rigorous optical modeling of the expected microscope images, are presented. These simulations are made for the important application of measuring Cr structures on quartz photomasks. Based on these simulations and on available data of the uncertainties of various experimental parameters—including instrument and sample parameters—expected uncertainty budgets for the measurement of the width of Cr lines on quartz substrates are estimated.

  12. Study of defect verification based on lithography simulation with a SEM system

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Shingo; Fujii, Nobuaki; Kanno, Koichi; Imai, Hidemichi; Hayano, Katsuya; Miyashita, Hiroyuki; Shida, Soichi; Murakawa, Tsutomu; Kuribara, Masayuki; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hara, Daisuke; Pang, Linyong

    2015-07-01

    In a Photomask manufacturing process, mask defect inspection is an increasingly important topic for 193nm optical lithography. Further extension of 193nm optical lithography to the next technology nodes, staying at a maximum numerical aperture (NA) of 1.35, pushes lithography to its utmost limits. This extension from technologies like ILT and SMO requires more complex mask patterns. In mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask features. One of the solutions is lithography simulation like AIMS. An issue with AIMS, however, is the low throughput of measurement, analysis etc.

  13. Advances in hardware, software, and automation for 193nm aerial image measurement systems

    NASA Astrophysics Data System (ADS)

    Zibold, Axel M.; Schmid, R.; Seyfarth, A.; Waechter, M.; Harnisch, W.; Doornmalen, H. v.

    2005-05-01

    A new, second generation AIMS fab 193 system has been developed which is capable of emulating lithographic imaging of any type of reticles such as binary and phase shift masks (PSM) including resolution enhancement technologies (RET) such as optical proximity correction (OPC) or scatter bars. The system emulates the imaging process by adjustment of the lithography equivalent illumination and imaging conditions of 193nm wafer steppers including circular, annular, dipole and quadrupole type illumination modes. The AIMS fab 193 allows a rapid prediction of wafer printability of critical mask features, including dense patterns and contacts, defects or repairs by acquiring through-focus image stacks by means of a CCD camera followed by quantitative image analysis. Moreover the technology can be readily applied to directly determine the process window of a given mask under stepper imaging conditions. Since data acquisition is performed electronically, AIMS in many applications replaces the need for costly and time consuming wafer prints using a wafer stepper/ scanner followed by CD SEM resist or wafer analysis. The AIMS fab 193 second generation system is designed for 193nm lithography mask printing predictability down to the 65nm node. In addition to hardware improvements a new modular AIMS software is introduced allowing for a fully automated operation mode. Multiple pre-defined points can be visited and through-focus AIMS measurements can be executed automatically in a recipe based mode. To increase the effectiveness of the automated operation mode, the throughput of the system to locate the area of interest, and to acquire the through-focus images is increased by almost a factor of two in comparison with the first generation AIMS systems. In addition a new software plug-in concept is realised for the tools. One new feature has been successfully introduced as "Global CD Map", enabling automated investigation of global mask quality based on the local determination of

  14. Refractive index change during exposure for 193-nm chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Oh, Hye-Keun; Sohn, Young-Soo; Sung, Moon-Gyu; Lee, Young-Mi; Lee, Eun-Mi; Byun, Sung Hwan; An, Ilsin; Lee, Kun-Sang; Park, In-Ho

    1999-06-01

    Some of the important areas to be improved for lithography simulation are getting correct exposure parameters and determining the change of refractive index. It is known that the real and imaginary refractive indices are changed during exposure. We obtained these refractive index changes during exposure for 193 nm chemically amplified resists. The variations of the transmittance as well as the resist thickness were measured during ArF excimer laser exposure. We found that the refractive index change is directly related to the concentration of the photo acid generator and de-protected resin. It is important to know the exact values of acid concentration from the exposure parameters since a small difference in acid concentration magnifies the variation in the amplified de-protection during post exposure bake. We developed and used a method to extract Dill ABC exposure parameters for 193 nm chemically amplified resist from the refractive index change upon exposure.

  15. Inline detection of Chrome degradation on binary 193nm photomasks

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

    2013-09-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300

  16. Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring

    NASA Astrophysics Data System (ADS)

    Jones, Chris M.; Kallingal, Chidam; Zawadzki, Mary T.; Jeewakhan, Nazneen N.; Kaviani, Nazila N.; Krishnan, Prakash; Klaum, Arthur D.; Van Ess, Joel

    2003-05-01

    The development of 100-nm design rule technologies is currently taking place in many R&D facilities across the world. For some critical alyers, the transition to 193-nm resist technology has been required to meet this leading edge design rule. As with previous technology node transitions, the materials and processes available are undergoing changes and improvements as vendors encounter and solve problems. The initial implementation of the 193-nm resits process did not meet the photolithography requirements of some IC manufacturers due to very high Post Exposure Bake temperature sensitivity and consequently high wafer to wafer CD variation. The photoresist vendors have been working to improve the performance of the 193-nm resists to meet their customer's requirements. Characterization of these new resists needs to be carried out prior to implementation in the R&D line. Initial results on the second-generation resists evaluated at Cypress Semicondcutor showed better CD control compared to the aelrier resist with comparable Depth of Focus (DOF), Exposure Latitute, Etch Resistance, etc. In addition to the standard lithography parameters, resist characterization needs to include defect density studies. It was found that the new resists process with the best CD control, resulted in the introduction of orders of magnitude higher yield limiting defects at Gate, Contact adn Local Interconnect. The defect data were shared with the resists vendor and within days of the discovery the resist vendor was able to pinpoint the source of the problem. The fix was confirmed and the new resists were successfully released to production. By including defect monitoring into the resist qualification process, Cypress Semiconductor was able to 1) drive correction actions earlier resulting in faster ramp and 2) eliminate potential yield loss. We will discuss in this paper how to apply the Micro Photo Cell Monitoring methodology for defect monitoring in the photolithogprhay module and the

  17. Rayleigh rejection filters for 193-nm ArF laser Raman spectroscopy

    NASA Technical Reports Server (NTRS)

    Mckenzie, Robert L.

    1993-01-01

    Selected organic absorbers and their solvents are evaluated as spectral filters for the rejection of 193-nm Rayleigh light associated with the use of an ArF excimer laser for Raman spectroscopy. A simply constructed filter cell filled with 0.5 percent acetone in water and an optical path of 7 mm is shown effectively to eliminate stray Rayleigh light underlying the Raman spectrum from air while transmitting 60 percent of the Raman light scattered by O2.

  18. E-beam to complement optical lithography for 1D layouts

    NASA Astrophysics Data System (ADS)

    Lam, David K.; Liu, Enden D.; Smayling, Michael C.; Prescop, Ted

    2011-04-01

    The semiconductor industry is moving to highly regular designs, or 1D gridded layouts, to enable scaling to advanced nodes, as well as improve process latitude, chip size and chip energy consumption. The fabrication of highly regular ICs is straightforward. Poly and metal layers are arranged into 1D layouts. These 1D layouts facilitate a two-step patterning approach: a line-creation step, followed by a line-cutting step, to form the desired IC pattern (See Figure 1). The first step, line creation, can be accomplished with a variety of lithography techniques including 193nm immersion (193i) and Self-Aligned Double Patterning (SADP). It appears feasible to create unidirectional parallel lines to at least 11 nm half-pitch, with two applications of SADP for pitch division by four. Potentially, this step can also be accomplished with interference lithography or directed self assembly in the future. The second step, line cutting, requires an extremely high-resolution lithography technique. At advanced nodes, the only options appear to be the costly quadruple patterning with 193i, or EUV or E-Beam Lithography (EBL). This paper focuses on the requirements for a lithography system for "line cutting", using EBL to complement Optical. EBL is the most cost-effective option for line cutting at advanced nodes for HVM.

  19. 7nm logic optical lithography with OPC-Lite

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.; Tsujita, Koichiro; Yaegashi, Hidetami; Axelrad, Valery; Nakayama, Ryo; Oyama, Kenichi; Yamauchi, Shohei; Ishii, Hiroyuki; Mikami, Koji

    2015-03-01

    The CMOS logic 22nm node was the last one done with single patterning. It used a highly regular layout style with Gridded Design Rules (GDR). Smaller nodes have required the same regular layout style but with multiple patterning for critical layers. A "line/cut" approach is being used to achieve good pattern fidelity and process margin.[1] As shown in Fig. 1, even with "line" patterns, pitch division will eventually be necessary. For the "cut" pattern, Design-Source-Mask Optimization (DSMO) has been demonstrated to be effective at the 20nm node and below.[2,3,4] Single patterning was found to be suitable down to 16nm, while double patterning extended optical lithography for cuts to the 10-12nm nodes. Design optimization avoided the need for triple patterning. Lines can be patterned with 193nm immersion with no complex OPC. The final line dimensions can be achieved by applying pitch division by two or four.[5] In this study, we extend the scaling using simplified OPC to the 7nm node for critical FEOL and BEOL layers. The test block is a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops, scaled from previous experiments. Simulation results show that for cuts at 7nm logic dimensions, the gate layer can be done with single patterning whose minimum pitch is 53nm, possibly some of the 1x metal layers can be done with double patterning whose minimum pitch is 53nm, and the contact layer will require triple patterning whose minimum pitch is 68nm. These pitches are less than the resolution limit of ArF NA=1.35 (72nm). However these patterns can be separated by a combination of innovative SMO for less than optical resolution limit and a process trick of hole-repair technique. An example of triple patterning coloring is shown in Fig 3. Fin and local interconnect are created by lines and trims. The number of trim patterns are 3 times (min. pitch=90nm) and twice (min. pitch=120nm), respectively. The small number of masks, large pitches, and

  20. Advances in 193 nm excimer lasers for mass spectrometry applications

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph; Esser, Hans-Gerd; Bonati, Guido

    2016-03-01

    Ongoing progress in mass analysis applications such as laser ablation inductively coupled mass spectrometry of solid samples and ultraviolet photoionization mediated sequencing of peptides and proteins is to a large extent driven by ultrashort wavelength excimer lasers at 193 nm. This paper will introduce the latest improvements achieved in the development of compact high repetition rate excimer lasers and elaborate on the impact on mass spectrometry instrumentation. Various performance and lifetime measurements obtained in a long-term endurance test over the course of 18 months will be shown and discussed in view of the laser source requirements of different mass spectrometry tasks. These sampling type applications are served by excimer lasers delivering pulsed 193 nm output of several mJ as well as fast repetition rates which are already approaching one Kilohertz. In order to open up the pathway from the laboratory to broader market industrial use, sufficient component lifetimes and long-term stable performance behavior have to be ensured. The obtained long-term results which will be presented are based on diverse 193 nm excimer laser tube improvements aiming at e.g. optimizing the gas flow dynamics and have extended the operational life the laser tube for the first time over several billion pulses even under high duty-cycle conditions.

  1. An AC phase measuring interferometer for measuring dn/dT of fused silica and calcium fluoride at 193 nm

    SciTech Connect

    Shagam, R.N.

    1998-09-01

    A novel method for the measurement of the change in index of refraction vs. temperature (dn/dT) of fused silica and calcium fluoride at the 193 nm wavelength has been developed in support of thermal modeling efforts for the development of 193 nm-based photolithographic exposure tools. The method, based upon grating lateral shear interferometry, uses a transmissive linear grating to divide a 193 nm laser beam into several beam paths by diffraction which propagate through separate identical material samples. One diffracted order passing through one sample overlaps the undiffracted beam from a second sample and forms interference fringes dependent upon the optical path difference between the two samples. Optical phase delay due to an index change from heating one of the samples causes the interference fringes to change sinusoidally with phase. The interferometer also makes use of AC phase measurement techniques through lateral translation of the grating. Results for several samples of fused silica and calcium fluoride are demonstrated.

  2. Solid sampling with 193-nm excimer laser ablation

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph

    2007-02-01

    Reproducible and sensitive elemental analysis of solid samples is a crucial task in areas of geology (e.g. microanalysis of fluid inclusions), material sciences, industrial quality control as well as in environmental, forensic and biological studies. To date the most versatile detection method is mass-spectroscopic multi-element analysis. In order to obtain reproducible results, this requires transferring the solid sample into the gas-phase while preserving the sample's stoichiometric composition. Laser ablation in combination with Inductively Coupled Plasma-Mass Spectrometry (LA-ICP-MS) is a proven powerful technique to meet the requirements for reliable solid sample analysis. The sample is laser ablated in an air-tight cell and the aerosol is carried by an inert gas to a micro-wave induced plasma where its constituents are atomized and ionized prior to mass analysis. The 193 nm excimer laser ablation, in particular, provides athermal sample ablation with very precise lateral ablation and controlled depth profiling. The high photon energy and beam homogeneity of the 193 nm excimer laser system avoids elemental fractionation and permits clean ablation of even transmissive solid materials such as carbonates, fluorites and pure quartz.

  3. Sub-20nm hybrid lithography using optical, pitch-division, and e-beam

    NASA Astrophysics Data System (ADS)

    Belledent, J.; Smayling, M.; Pradelles, J.; Pimenta-Barros, P.; Barnola, S.; Mage, L.; Icard, B.; Lapeyre, C.; Soulan, S.; Pain, L.

    2012-03-01

    A roadmap extending far beyond the current 22nm CMOS node has been presented several times. [1] This roadmap includes the use of a highly regular layout style which can be decomposed into "lines and cuts."[2] The "lines" can be done with existing optical immersion lithography and pitch division with self-aligned spacers.[3] The "cuts" can be done with either multiple exposures using immersion lithography, or a hybrid solution using either EUV or direct-write ebeam.[ 4] The choice for "cuts" will be driven by the availability of cost-effective, manufacturing-ready equipment and infrastructure. Optical lithography improvements have enabled scaling far beyond what was expected; for example, soft x-rays (aka EUV) were in the semiconductor roadmap as early as 1994 since optical resolution was not expected for sub-100nm features. However, steady improvements and innovations such as Excimer laser sources and immersion photolithography have allowed some manufacturers to build 22nm CMOS SOCs with single-exposure optical lithography. With the transition from random complex 2D shapes to regular 1D-patterns at 28nm, the "lines and cuts" approach can extend CMOS logic to at least the 7nm node. The spacer double patterning for lines and optical cuts patterning is expected to be used down to the 14nm node. In this study, we extend the scaling to 18nm half-pitch which is approximately the 10-11nm node using spacer pitch division and complementary e-beam lithography. For practical reasons, E-Beam lithography is used as well to expose the "mandrel" patterns that support the spacers. However, in a production mode, it might be cost effective to replace this step by a standard 193nm exposure and applying the spacer technique twice to divide the pitch by 3 or 4. The Metal-1 "cut" pattern is designed for a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops. Since the final conductor is defined by a Damascene process, the "cut" patterns become islands

  4. 300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers.

    PubMed

    Xuan, Hongwen; Zhao, Zhigang; Igarashi, Hironori; Ito, Shinji; Kakizaki, Kouji; Kobayashi, Yohei

    2015-04-20

    A narrow-linewidth, high average power deep-ultraviolet (DUV) coherent laser emitting at 193 nm is demonstrated by frequency mixing a Yb-hybrid laser with an Er-fiber laser. The Yb-hybrid laser consists of Yb-fiber lasers and an Yb:YAG amplifier. The average output power of the 193 nm laser is 310 mW at 6 kHz, which corresponds to a pulse energy of 51 μJ. To the best of our knowledge, this is the highest average power and pulse energy ever reported for a narrow-linewidth 193 nm light generated by a combination of solid-state and fiber lasers with frequency mixing. We believe this laser will be beneficial for the application of interference lithography by seeding an injection-locking ArF eximer laser. PMID:25969096

  5. 300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers.

    PubMed

    Xuan, Hongwen; Zhao, Zhigang; Igarashi, Hironori; Ito, Shinji; Kakizaki, Kouji; Kobayashi, Yohei

    2015-04-20

    A narrow-linewidth, high average power deep-ultraviolet (DUV) coherent laser emitting at 193 nm is demonstrated by frequency mixing a Yb-hybrid laser with an Er-fiber laser. The Yb-hybrid laser consists of Yb-fiber lasers and an Yb:YAG amplifier. The average output power of the 193 nm laser is 310 mW at 6 kHz, which corresponds to a pulse energy of 51 μJ. To the best of our knowledge, this is the highest average power and pulse energy ever reported for a narrow-linewidth 193 nm light generated by a combination of solid-state and fiber lasers with frequency mixing. We believe this laser will be beneficial for the application of interference lithography by seeding an injection-locking ArF eximer laser.

  6. Tuning and simulating a 193-nm resist for 2D applications

    NASA Astrophysics Data System (ADS)

    Howard, William B.; Wiaux, Vincent; Ercken, Monique; Bui, Bang; Byers, Jeff D.; Pochkowski, Mike

    2002-07-01

    For some applications, the usefulness of lithography simulation results depends strongly on the matching between experimental conditions and the simulation input parameters. If this matching is optimized and other sources of error are minimized, then the lithography model can be used to explain printed wafer experimental results. Further, simulation can be useful in predicting the results or in choosing the correct set of experiments. In this paper, PROLITH and ProDATA AutoTune were used to systematically vary simulation input parameters to match measured results on printed wafers used in a 193 nm process. The validity of the simulation parameters was then checked using 3D simulation compared to 2D top-down SEM images. The quality of matching was evaluated using the 1D metrics of average gate CD and Line End Shortening (LES). To ensure the most accurate simulation, a new approach was taken to create a compound mask from GDSII contextual information surrounding an accurate SEM image of the reticle region of interest. Corrections were made to account for all metrology offsets.

  7. Photorefractive keratectomy at 193 nm using an erodible mask

    NASA Astrophysics Data System (ADS)

    Gordon, Michael; Brint, Stephen F.; Durrie, Daniel S.; Seiler, Theo; Friedman, Marc D.; Johnsson, N. M. F.; King, Michael C.; Muller, David F.

    1992-08-01

    Clinical experience with more than ten thousand sighted eyes has demonstrated great promise for correcting myopia with photorefractive keratectomy (PRK). Previously reported techniques have incorporated computer-controlled irises, diaphragms, and apertures to regulate the desired distribution of 193 nm radiation onto the eye. This paper reports on an entirely new approach for performing PRK which utilizes an erodible mask to control the shape transfer process. Compared to the more traditional techniques, the erodible mask offers promise of correcting a broad range of refractive errors. In this paper the erodible mask and associated hardware are described in detail. We describe the shape transfer experiments used to predict the functional relationship between the desired refractive correction and the mask shape. We report on early clinical results from five patients with myopic astigmatism. We conclude that the early shape transfer experiments overestimated the spherical component of the correction by 1.25 diopters and underestimated the cylindrical component by approximately 0.85 diopters. The data suggest there may be biological effects which evoke different healing responses when myopic PRK corrections are performed with and without astigmatism. Clinical trials are proceeding with the mask shapes adjusted for these observations.

  8. Optical simulations for fractional fluorine terminated coatings on nanoimprint lithography masks

    NASA Astrophysics Data System (ADS)

    Seidel, Thomas E.; Goldberg, Alexander; Halls, Mathew D.

    2015-10-01

    Simulations of the optical intensity within Nano Imprint Lithography (NIL) mask features have been made for patterned quartz masks having ultrathin film coatings with different indices of refraction. Fractionally fluorine terminated surfaces, previously proposed for improving the yield of NIL processes, are briefly reviewed. Optical intensity solutions within the feature were obtained using Panoramictech Maxwell solver software for variances in the optical constants of the coating films, aspect ratio, feature size, and wavelength.. The coated masks have conformal surface, higher index of refraction under-layer coating and a fractional terminated fluorine hydrocarbon (FHC) monomolecular layer. The values of optical constants for the FHC layers are unknown, so a range of ad-hoc values were simulated. Optical constants for quartz mask and Al2O3, TiO2 and Si under-layer films are taken from the literature. Wavelengths were varied from 193nm to 365nm. The question of photo-dissociation of the FHC layer for higher energy photons is addressed from first principles, with the result that the F-terminated layers are stable at higher wavelengths. Preliminary simulations for features filled with resist over various substrates are dependent on the antireflection character of the underlying film system. The optical intensity is generally increased within the simulated mask feature when coated with a higher index/FHC films relative to the uncoated reference quartz mask for ~5nm physical feature sizes.

  9. Photoinduced absorption and refractive-index induction in phosphosilicate fibres by radiation at 193 nm

    SciTech Connect

    Rybaltovsky, A A; Sokolov, V O; Plotnichenko, V G; Lanin, Aleksei V; Semenov, S L; Dianov, Evgenii M; Gur'yanov, A N; Khopin, V F

    2007-04-30

    The photoinduced room-temperature-stable increase in the refractive index by {approx}5x10{sup -4} at a wavelength of 1.55 {mu}m was observed in phosphosilicate fibres without their preliminary loading with molecular hydrogen. It is shown that irradiation of preliminary hydrogen-loaded fibres by an ArF laser at 193 nm enhances the efficiency of refractive-index induction by an order of magnitude. The induced-absorption spectra of preforms with a phosphosilicate glass core and optical fibres fabricated from them are studied in a broad spectral range from 150 to 5000 nm. The intense induced-absorption band ({approx}800 cm{sup -1}) at 180 nm is found, which strongly affects the formation of the induced refractive index. The quantum-chemical model of a defect related to this band is proposed. (optical fibres)

  10. Charting CEBL's role in mainstream semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Lam, David K.

    2013-09-01

    historically kept it out of mainstream fabs. Thanks to continuing EBDW advances combined with the industry's move to unidirectional (1D) gridded layout style, EBDW promises to cost-efficiently complement 193nm ArF immersion (193i) optical lithography in high volume manufacturing (HVM). Patterning conventional 2D design layouts with 193i is a major roadblock in device scaling: the resolution limitations of optical lithography equipment have led to higher mask cost and increased lithography complexity. To overcome the challenge, IC designers have used 1D layouts with "lines and cuts" in critical layers.1 Leading logic and memory chipmakers have been producing advanced designs with lines-and-cuts in HVM for several technology nodes in recent years. However, cut masks in multiple optical patterning are getting extremely costly. Borodovsky proposes Complementary Lithography in which another lithography technology is used to pattern line-cuts in critical layers to complement optical lithography.2 Complementary E-Beam Lithography (CEBL) is a candidate to pattern the Cuts of optically printed Lines. The concept of CEBL is gaining acceptance. However, challenges in throughput, scaling, and data preparation rate are threatening to deny CEBL's role in solving industry's lithography problem. This paper will examine the following issues: The challenges of massively parallel pixel writing The solutions of multiple mini-column design/architecture in: Boosting CEBL throughput Resolving issues of CD control, CDU, LER, data rate, higher resolution, and 450mm wafers The role of CEBL in next-generation solution of semiconductor lithography

  11. Expected innovations of optical lithography in the next 10 years

    NASA Astrophysics Data System (ADS)

    Owa, Soichi; Hirayanagi, Noriyuki

    2016-03-01

    In the past 10 years, immersion lithography has been the most effective high volume manufacturing method for the critical layers of semiconductor devices. Thinking of the next 10 years, we can expect continuous improvement on existing 300 mm wafer scanners with better accuracy and throughput to enhance the total output value per input cost. This value productivity, however, can be upgraded also by larger innovations which might happen in optical lithography. In this paper, we will discuss the possibilities and the impossibilities of potential innovation ideas of optical lithography, which are 450 mm wafer, optical maskless, multicolor lithography, and metamaterial.

  12. Anamorphic high-NA EUV lithography optics

    NASA Astrophysics Data System (ADS)

    Migura, Sascha; Kneer, Bernhard; Neumann, Jens Timo; Kaiser, Winfried; van Schoot, Jan

    2015-09-01

    EUV lithography (EUVL) for a limit resolution below 8 nm requires the numerical aperture (NA) of the projection optics to be larger than 0.50. For such a high-NA optics a configuration of 4x magnification, full field size of 26 x 33 mm² and 6'' mask is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable mask shadowing effects. These shadowing effects can only be controlled by increasing the magnification, hence reducing the system productivity or demanding larger mask sizes. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm² but utilizing existing 6'' mask infrastructure. We discuss the optical solutions for such anamorphic high-NA EUVL.

  13. Non-reciprocal double-exposure materials for 193nm pitch division

    NASA Astrophysics Data System (ADS)

    Bristol, Robert; Roberts, Jeanette; Shykind, David; Blackwell, James M.

    2010-04-01

    We present an overview of lithography results achieved for materials to support "leave-on-chuck" double-exposure pitch-division patterning. These materials attempt to make use of a non-reciprocal photoresponse in which the same number of absorbed 193nm photons can produce different remaining levels of resist, depending upon whether the photons are received all at once or in two separate exposures. This, in principle, allows for the use of two exposures, using independent masks and without removing the wafer from the chuck, to produce non-regular patterning down to one half the pitch limit of the scanner. Such behavior could be produced, for example, by a reversible two-stage Photoacid Generator (PAG) or other non-reciprocal mechanisms. Several stages of lithography screening were done on a large number of candidate systems. Initially, thermal stability, casting behavior, and single-exposure (SE) contrast curves were investigated to determine whether the system behaved as a usable photoresist. The next stage of testing probed non-reciprocal response, in the form of double-exposure (DE) contrast curves, typically with an intervening whole-wafer flood exposure at a longer wavelength to enact the nonreciprocity. The key criterion for the material to pass this stage was to show a shifted contrast curve (difference in photospeed) for DE vs. SE. Such a shift would then imply that pitch-division imaging would be possible for this material. After identifying materials which exhibited this SE vs. DE contrast curve shift, the next step was actual DE patterning. Since the laboratory tool used for these exposures does not have the precise alignment needed to interleave the two exposures for pitch division, we employed a technique in which the second exposure is rotated slightly with respect to the first exposure. This results in a Moiré-type pattern in which the two aerial images transition between overlap and interleave across the wafer. One particular PAG + sensitizer did

  14. Absorption coefficients for water vapor at 193 nm from 300 to 1073 K

    NASA Technical Reports Server (NTRS)

    Kessler, W. J.; Carleton, K. L.; Marinelli, W. J.

    1993-01-01

    Measurements of the water absorption coefficient at 193 nm from 300 to 1073 K are reported. The measurements were made using broadband VUV radiation and a monochromator-based detection system. The water vapor was generated by a saturator and metered into a flowing, 99 cm absorption cell via a water vapor mass flow meter. The 193 nm absorption coefficient measurements are compared to room temperature and high temperature shock tube measurements with good agreement. The absorption can be parameterized by a nu3 vibrational mode reaction coordinate and the thermal population of the nu3 mode.

  15. A survey of advanced excimer optical imaging and lithography

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koichi; Suwa, Kyoichi

    1998-11-01

    The first item discussed in this paper is to estimate the future trend regarding minimum geometry and the optical parameters, such as NA and wavelength. Simulations based on aerial images are performed for the estimation. The resolution limit is defined as a minimum feature size which retains practical depth of focus (DOF). Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser (λ=248 nm), ArF excimer laser (λ=193 nm) and F2 excimer laser (λ=157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength. The second item is to survey ArF optics. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source. Discussions are ranging over some critical issues. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown.

  16. Rotational Spectrum of CBr by Kinetic Microwave Spectroscopy of 193-nm Photolysis Products of Bromoform.

    PubMed

    Hassouna; Walters; Demuynck; Bogey

    2000-03-01

    We have measured the first millimeter-wave spectrum of CBr. The radical was produced by pulsed UV-laser photolysis of bromoform at 193 nm and detected using kinetic spectroscopy. We have significantly improved the rotational and fine structure constants for the ground vibrational state. The hyperfine structure due to the bromine nucleus has been resolved and quadrupole and magnetic hyperfine parameters evaluated for the first time. Copyright 2000 Academic Press.

  17. EUV lithography optics for sub-9nm resolution

    NASA Astrophysics Data System (ADS)

    Kneer, Bernhard; Migura, Sascha; Kaiser, Winfried; Neumann, Jens Timo; van Schoot, Jan

    2015-03-01

    EUV lithography for resolution below 9 nm requires the numerical aperture of the projection optics to be significantly larger than 0.45. A configuration of 4x magnification, full field size and 6'' reticle is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable shadowing effects, which can only be controlled by increasing the magnification, hence reducing the system productivity. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm². We discuss the optical solutions for anamorphic high-NA lithography.

  18. Single spherical mirror optic for extreme ultraviolet lithography enabled by inverse lithography technology.

    PubMed

    Scranton, Gregg; Bhargava, Samarth; Ganapati, Vidya; Yablonovitch, Eli

    2014-10-20

    Traditionally, aberration correction in extreme ultraviolet (EUV) projection optics requires the use of multiple lossy mirrors, which results in prohibitively high source power requirements. We analyze a single spherical mirror projection optical system where aberration correction is built into the mask itself, through Inverse Lithography Technology (ILT). By having fewer mirrors, this would reduce the power requirements for EUV lithography. We model a single spherical mirror system with orders of magnitude more spherical aberration than would ever be tolerated in a traditional multiple mirror system. By using ILT, (implemented by an adjoint-based gradient descent optimization algorithm), we design photomasks that successfully print test patterns, in spite of these enormous aberrations. This mathematical method was tested with a 6 plane wave illumination source. Nonetheless, it would have poor power throughput from a totally incoherent source. PMID:25401536

  19. Time-resolved FTIR studies of the photodissociation of pyruvic acid at 193 nm

    NASA Astrophysics Data System (ADS)

    Hall, Gregory E.; Muckerman, James T.; Preses, Jack M.; Flynn, Ralph E. Weston George W., Jr.

    1992-05-01

    Infrared emission from carbon dioxide produced in the 193 nm photolysis of pyruvic acid vapor has been investigated using time-resolved Fourier transform infrared spectroscopy as a probe. A broad feature, strongly red-shifted from the antisymmetric stretching fundamental (ν 3) of CO 2, dominates the early spectrum. A statistical model using a linear surprisal is shown to provide good agreement with the observed spectral contour, but only if the energy available to the photofragments corresponds to the direct formation of acetaldehyde along with CO 2.

  20. 193-nm-laser-induced spectral shift in HR coated mirrors

    NASA Astrophysics Data System (ADS)

    Cho, Byungil; Rudisill, J. Earl; Danielewicz, Edward

    2012-12-01

    High-reflectance mirrors, fabricated by use of fluoride coating materials, were irradiated for extended periods by a 193-nm kilohertz repetitive laser source. This irradiation promoted a spectral shift in the reflectance band towards shorter wavelengths. In efforts to determine the mechanism for the observed spectral shifts, various models were investigated by employing such techniques as spectrophotometry, surface profile interferometry, coating design simulation, and x-ray diffraction. The result of the investigation indicates that layers near the top surface of the coating structure underwent densification, which resulted in the observed spectral shift.

  1. Collateral damage-free debridement using 193nm ArF laser

    NASA Astrophysics Data System (ADS)

    Wynne, James J.; Felsenstein, Jerome M.; Trzcinski, Robert; Zupanski-Nielsen, Donna; Connors, Daniel P.

    2011-03-01

    Burn eschar and other necrotic areas of the skin and soft tissue are anhydrous compared to the underlying viable tissue. A 193 nm ArF excimer laser, emitting electromagnetic radiation at 6.4 eV at fluence exceeding the ablation threshold, will debride such necrotic areas. Because such radiation is strongly absorbed by aqueous chloride ions through the nonthermal process of electron photodetachment, debridement will cease when hydrated (with chloride ions) viable tissue is exposed, avoiding collateral damage to this tissue. Such tissue will be sterile and ready for further treatment, such as a wound dressing and/or a skin graft.

  2. Clinical use of the 193-nm excimer laser in the treatment of corneal scars.

    PubMed

    Sher, N A; Bowers, R A; Zabel, R W; Frantz, J M; Eiferman, R A; Brown, D C; Rowsey, J J; Parker, P; Chen, V; Lindstrom, R L

    1991-04-01

    Phototherapeutic keratectomy using a 193-nm excimer laser was performed at four centers on 33 sighted patients with corneal opacity and/or irregular astigmatism. Pathologic conditions included anterior stromal and superficial scarring from postinfectious and posttraumatic causes, including inactive herpes simplex virus, anterior corneal dystrophies, recurrent erosions, granular dystrophy, and band keratopathy. Most patients received peribulbar anesthesia and underwent removal of the epithelium prior to laser ablation. A majority of patients had a reduction in the amount of corneal scarring and approximately half had improved visual acuity. No intraocular reaction or changes in endothelial counts were seen, and some patients avoided the need for penetrating keratoplasty. Reepithelialization usually occurred within 4 or 5 days and we noted no significant scarring secondary to use of the laser. It was difficult to eliminate preexisting irregular astigmatism despite the use of surface modulators, such as methylcellulose. A hyperopic shift secondary to corneal flattening was encountered in approximately 50% of the patients. A combination of myopic ablation, followed immediately by a secondary hyperopic steepening, may minimize this refractive change. The 193-nm excimer laser is an effective new tool in the treatment of selected patients with superficial corneal opacity from a variety of conditions. PMID:2012547

  3. 193 nm excimer laser sclerostomy in pseudophakic patients with advanced open angle glaucoma.

    PubMed Central

    Allan, B D; van Saarloos, P P; Cooper, R L; Constable, I J

    1994-01-01

    A modified open mask system incorporating an en face air jet to dry the target area during ablation and a conjunctival plication mechanism, which allows ab externo delivery of the 193 nm excimer laser without prior conjunctival dissection, has been developed to form small bore sclerostomies accurately and atraumatically. Full thickness sclerostomies, and sclerostomies guarded by a smaller internal ostium can be created. A pilot therapeutic trial was conducted in pseudophakic patients with advanced open angle glaucoma. Six full thickness sclerostomies (200 microns and 400 microns diameter) and three guarded sclerostomies were created in nine patients by 193 nm excimer laser ablation (fluence per pulse 400 mJ/cm2, pulse rate 16 Hz, air jet pressure intraocular pressure +25 mm Hg). After 6 months' follow up, intraocular pressure was controlled (< or = 16 mm Hg) in eight of the nine patients (6/9 without medication). Early postoperative complications included hyphaema (trace--2.5 mm) (6/9), temporary fibrinous sclerostomy occlusion (4/9), profound early hypotony (all patients without fibrinous occlusion), and suprachoroidal haemorrhage in one case. Conjunctival laser wounds were self sealing. Small bore laser sclerostomy procedures are functionally equivalent to conventional full thickness procedures, producing early postoperative hypotony, with an increased risk of suprachoroidal haemorrhage in association with this. Further research is required to improve control over internal guarding in excimer laser sclerostomy before clinical trials of this technique can safely proceed. Images PMID:8148335

  4. Internal state distribution of the CF fragment from the 193 nm photodissociation of CFCl and CFBr

    NASA Astrophysics Data System (ADS)

    Shin, Seung Keun; Dagdigian, Paul J.

    2007-04-01

    The dynamics of the 193nm photodissociation of the CFCl and CFBr molecules have been investigated in a molecular beam experiment. The CFCl and CFBr parent molecules were generated by pyrolysis of CHFCl2 and CFBr3, respectively, and the CFCl and the CF photofragment were detected by laser fluorescence excitation. The 193nm attenuation cross section of CFCl was determined from the reduction of the CF photofragment signal as a function of the photolysis laser fluence. The internal state distribution was derived from the analysis of laser fluorescence excitation spectra in the AΣ+2-XΠ2 band system. A very low degree of rotational excitation, with essentially equal A' and A″ Λ-doublet populations, and no vibrational excitation were found in the CF photofragment. The energy available to the photofragments is hence predominantly released as translational energy. The CF internal state distribution is consistent with the dissociation of a linear intermediate state. Considerations of CFCl electronic states suggest that a bent Rydberg state is initially excited.

  5. Extension of optical lithography by mask-litho integration with computational lithography

    NASA Astrophysics Data System (ADS)

    Takigawa, T.; Gronlund, K.; Wiley, J.

    2010-05-01

    Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

  6. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Conde, J. C.; Chiussi, S.; Serra, C.; González, P.

    2016-01-01

    193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3 μm diameter and around 25 nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240 mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2 μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.

  7. Three-body dissociations: The photodissociation of dimethyl sulfoxide at 193 nm

    SciTech Connect

    Blank, D.A.; North, S.W.; Stranges, D.

    1997-04-01

    When a molecule with two equivalent chemical bonds is excited above the threshold for dissociation of both bonds, how the rupture of the two bonds is temporally coupled becomes a salient question. Following absorption at 193 nm dimethyl sulfoxide (CH{sub 3}SOCH{sub 3}) contains enough energy to rupture both C-S bonds. This can happen in a stepwise (reaction 1) or concerted (reaction 2) fashion where the authors use rotation of the SOCH{sub 3} intermediate prior to dissociation to define a stepwise dissociation: (1) CH{sub 3}SOCH{sub 3} {r_arrow} 2CH{sub 3} + SO; (2a) CH{sub 3}SOCH{sub 3} {r_arrow} CH{sub 3} + SOCH{sub 3}; and (2b) SOCH{sub 3} {r_arrow} SO + CH{sub 3}. Recently, the dissociation of dimethyl sulfoxide following absorption at 193 nm was suggested to involve simultaneous cleavage of both C-S bonds on an excited electronic surface. This conclusion was inferred from laser induced fluorescence (LIF) and resonant multiphoton ionization (2+1 REMPI) measurements of the internal energy content in the CH{sub 3} and SO photoproducts and a near unity quantum yield measured for SO. Since this type of concerted three body dissociation is very interesting and a rather rare event in photodissociation dynamics, the authors chose to investigate this system using the technique of photofragment translational spectroscopy at beamline 9.0.2.1. The soft photoionization provided by the VUV undulator radiation allowed the authors to probe the SOCH{sub 3} intermediate which had not been previously observed and provided good evidence that the dissociation of dimethyl sulfoxide primarily proceeds via a two step dissociation, reaction 2.

  8. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography

    NASA Astrophysics Data System (ADS)

    Tiddia, Mariavitalia; Mula, Guido; Sechi, Elisa; Vacca, Annalisa; Cara, Eleonora; De Leo, Natascia; Fretto, Matteo; Boarino, Luca

    2016-09-01

    In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown.

  9. Super-resolved optical lithography with phase controlled source

    NASA Astrophysics Data System (ADS)

    Hong, Peilong; Zhang, Guoquan

    2015-05-01

    Recently, we have demonstrated that second-order subwavelength interference could be realized in an optical lithography scheme with an effective entangled source [P. Hong and G. Zhang, Phys. Rev. A 88, 043838 (2013), 10.1103/PhysRevA.88.043838]. In this paper, by considering the correlation function in both the source plane and observation plane, we show how the coherence property of such a source is controlled via introduction of random-phase correlation, which finally affects the two-photon interference effect observed in the far-field plane. Furthermore, by introducing different but similar random-phase correlations, we generalize the phase controlled source with particular high-order coherence properties to obtain higher-order subwavelength interference, i.e., high-order super-resolved optical lithography. These results show the importance of phase control in generating a light field with particular high-order coherence properties.

  10. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography.

    PubMed

    Tiddia, Mariavitalia; Mula, Guido; Sechi, Elisa; Vacca, Annalisa; Cara, Eleonora; De Leo, Natascia; Fretto, Matteo; Boarino, Luca

    2016-12-01

    In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown. PMID:27686091

  11. Manufacturing implementation of scatterometry and other techniques for 300-mm lithography tool controls

    NASA Astrophysics Data System (ADS)

    Wiltshire, T.; Corliss, D.; Brunner, T.; Ausschnitt, C.; Young, R.; Nielson, R.; Hwang, E.; Iannucci, J., Jr.

    2009-03-01

    Focus and dose control of lithography tools for leading edge semiconductor manufacturing are critical to obtaining acceptable process yields and device performance. The need for these controls is increasing due to the apparent limitation of optical water immersion lithography at NA values of approximately 1.35 and the need to use the same equipment for 45nm, 32nm, and 22nm node production. There is a rich history of lithographic controls using various techniques described in the literature. These techniques include (but are not limited to) Phase Grating Focus Monitoring1 (PGFM), optical CD control using optical overlay metrology equipment (OOCD)2,3, and in more recent years optical scatterometry4,5. Some of the techniques, even though they are technically sound, have not been practical to implement in volume manufacturing as controls for various reasons. This work describes the implementation and performance of two of these techniques (optical scatterometry and OOCD) in a volume 300mm production facility. Data to be reviewed include: - General implementation approach. - Scatterometry dose and focus stability data for 193nm immersion and 248nm dry lithography systems. - Analysis of the stability of optical scatterometry dose and focus deconvolution coefficients over time for 193nm immersion and 248nm dry systems. - Comparison between scatterometry and OOCD techniques for focus monitoring of 248nm dry systems. The presentation will also describe the practical issues with implementing these techniques as well as describe some possible extensions to enhance the current capabilities being described.

  12. DNA damage and altered gene expression in cultured human skin fibroblasts exposed to 193-nm excimer laser radiation

    NASA Astrophysics Data System (ADS)

    Samid, Dvorit; Flessate, Denise M.; Miller, Alexandra C.; Rimoldi, Donata

    1990-06-01

    Tissue ablation using 193nm excimer lasers is being considered for a variety of surgical procedures, yet little is known regarding the potential mutagenic risk to human cells. The effects of sublethal doses of radiation on cellular DNA and gene expression have been examined in cultured human skin fibroblasts. Northern blot analysis of mRNA revealed an increase in the levels of the c-f. proto-oncogene, interstitial collagenase, and metallothionein transcripts after laser radiation at either 193nm or 248nm. Similar changes in gene expression have been previously observed in cells treated with different carcinogens, including classical UV light (254nm) and phorbol esters. In contrast to the conventional UV light or laser radiation at 248nm, the 193nm radiation did not cause significant pyrimidine dimer formation, as determined by measurements of unscheduled DNA synthesis. However, both 193nm and 248nm radiation induced micronuclei formation, indicative of chromosome breakage. These data indicate that exposure of actively replicating human skin cells to sublethal doses of 193nm laser radiation may result in molecular changes associated with carcinogenesis.

  13. Large-Area Zone Plate Fabrication with Optical Lithography

    SciTech Connect

    Denbeaux, G.

    2011-09-09

    Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/{Delta}E = 700[1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/{Delta}E = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

  14. Large-Area Zone Plate Fabrication with Optical Lithography

    NASA Astrophysics Data System (ADS)

    Denbeaux, G.

    2011-09-01

    Zone plates as condenser optics for x-ray microscopes offer simple optical designs for both illumination and spectral resolution when used as a linear monochromator. However, due to the long write times for electron beam lithography, both the availability and the size of zone plates for condensers have been limited. Since the resolution provided by the linear monochromator scales almost linearly with the diameter of the zone plate, the full potential for zone plate monochromators as illumination systems for x-ray microscopes has not been achieved. For example, the 10-mm-diameter zone plate has demonstrated a spectral resolution of E/ΔE = 700 [1], but with a 26-mm-diameter zone plate, the calculated spectral resolution is higher than E/ΔE = 3000. These large-area zone plates are possible to fabricate with the leading edge semiconductor lithography tools such as those available at the College of Nanoscale Science and Engineering at the University at Albany. One of the lithography tools available is the ASML TWINSCAN XT: 1950i with 37-nm resolution [2]. A single 300-mm wafer can contain more than 60 fields, each with a large area condenser, and the throughput of the tool can be more than one wafer every minute.

  15. Optical Lithography on non-flat surfaces; A Case Study

    NASA Astrophysics Data System (ADS)

    Moore, Clayton; Newton, Conrad; Geerts, Wilhelmus; Palmer, Daniel; Tamir, Dan

    2008-10-01

    Only a few studies of optical lithography on non-flat substrates have been reported. Most of these systems only work on polished very well defined substrates. For example, Ball Semiconductor developed a system for projection lithography on polished spherical balls of 1 mm diameter. We propose a system that works on an arbitrary surface and enables lithography on a wide variety of substrates including the wings of insects or a single crystalline grain of a ceramic sample. The system consists of a computer controlled laser beam that is focused through an optical microscope on an XY-table. The size of the beam can be changed by varying the size of the aperture or the change of the objective. The focus of the microscope can be automatically adjusted enabling to follow the 3D profile of the sample's surface. The laser intensity is automatically adjusted to keep the dose constant as the samples profile and the speed of the xy-table very. A cross-compiler, which utilizes principles of computer graphics to figure the required exposure parameters based on the surface of the object was developed. It accepts a text file, a vector based graphic file, or a raster image and generates a file with instructions for the laser beam writer.

  16. Low-cost method for producing extreme ultraviolet lithography optics

    DOEpatents

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  17. Self-cleaning optic for extreme ultraviolet lithography

    DOEpatents

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  18. Fabrication and testing of optics for EUV projection lithography

    SciTech Connect

    Taylor, J. S., LLNL

    1998-03-18

    EUV Lithography (EUVL) is a leading candidate as a stepper technology for fabricating the ``0.1 {micro}m generation`` of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to DUV Lithography (DUVL), except that 11-13nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1{micro}m features has been well-established using small-field EUVL printing tools and development efforts are currently underway to demonstrate that cost-effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements. Indeed, the goal of this paper is to demonstrate that procuring EUVL projection optical substrates is feasible. This conclusion is based on measurements of both commercially-available and developmental substrates. The paper discusses EUVL figure and finish specifications, followed by examples of ultrasmooth and accurate surfaces, and concludes with a discussion of how substrates are measured and evaluated.

  19. Photodissociation of the Propargyl (C3D3) Radicals at 248 nm and 193 nm

    SciTech Connect

    Neumark., D.M.; Crider, P.E.; Castiglioni, L.; Kautzman, K.K.

    2009-01-21

    The photodissociation of perdeuterated propargyl (D{sub 2}CCCD) and propynyl (D{sub 3}CCC) radicals was investigated using fast beam photofragment translational spectroscopy. Radicals were produced from their respective anions by photodetachment at 540 nm and 450 nm (below and above the electron affinity of propynyl). The radicals were then photodissociated by 248 nm or 193 nm light. The recoiling photofragments were detected in coincidence with a time- and position-sensitive detector. Three channels were observed: D{sub 2} loss, CD + C{sub 2}D{sub 2}, and CD{sub 3} + C{sub 2}. Obervation of the D loss channel was incompatible with this experiment and was not attempted. Our translational energy distributions for D{sub 2} loss peaked at nonzero translational energy, consistent with ground state dissociation over small (< 1 eV) exit barriers with respect to separated products. Translational energy distributions for the two heavy channels peaked near zero kinetic energy, indicating dissociation on the ground state in the absence of exit barriers.

  20. Hydrogen atom formation from the photodissociation of water ice at 193 nm.

    PubMed

    Yabushita, Akihiro; Hashikawa, Yuichi; Ikeda, Atsushi; Kawasaki, Masahiro; Tachikawa, Hiroto

    2004-03-15

    The TOF spectra of photofragment hydrogen atoms from the 193 nm photodissociation of amorphous ice at 90-140 K have been measured. The spectra consist of both a fast and a slow components that are characterized by average translational energies of 2k(B)T(trans)=0.39+/-0.04 eV (2300+/-200 K) and 0.02 eV (120+/-20 K), respectively. The incident laser power dependency of the hydrogen atom production suggests one-photon process. The electronic excitation energy of a branched cluster, (H(2)O)(6+1), has been theoretically calculated, where (H(2)O)(6+1) is a (H(2)O)(6) cyclic cluster attached by a water molecule with the hydrogen bond. The photoabsorption of this branched cluster is expected to appear at around 200 nm. The source of the hydrogen atoms is attributed to the photodissociation of the ice surface that is attached by water molecules with the hydrogen bond. Atmospheric implications are estimated for the photodissociation of the ice particles (Noctilucent clouds) at 190-230 nm in the region between 80 and 85 km altitude.

  1. Photodissociation of CF 3Br at 193 nm: evidence for a distorted dissociation pathway

    NASA Astrophysics Data System (ADS)

    Thelen, M.-A.; Felder, P.

    1996-03-01

    The photodissociation of CF 3Br at 193 nm has been studied by photofragment translational spectroscopy. The primary dissociation step leads to the formation of CF 3 radicals and Br atoms in the electronic ground state and in the spin-orbit excited state, with relative quantum yields φ( Br) = 0.47 ± 0.05 and φ( Br∗) = 0.53 ∓ 0.05 , respectively. At higher laser fluences the slowest and internally hottest CF 3 radicals undergo photoinduced secondary dissociation to CF 2 + F. The anisotropy parameters derived from measurements with a polarized photolysis laser are β( Br) = 1.8 ± 0.2 and β( Br∗) = 0.7 ± 0.3 . The experimental results are discussed in terms of a model that involves the initial excitation of two repulsive electronic states 3Q 0 and 1Q 1 via transitions polarized parallel and perpendicular to the CBr bond, respectively. From the observed β parameters it is concluded that in roughly two thirds of the molecules dissociation proceeds via a distorted geometry in which the molecular symmetry C 3v is reduced to C s through the effect of e-type bending vibrations.

  2. A new look at the photodissociation of methyl iodide at 193 nm

    NASA Astrophysics Data System (ADS)

    Xu, Hong; Pratt, S. T.

    2013-12-01

    A new measurement of the photodissociation of CH3I at 193 nm is reported in which we use a combination of vacuum ultraviolet photoionization and velocity map ion imaging. The iodine photofragments are probed by single-photon ionization at photon energies above and below the photoionization threshold of I(2P3/2). The relative I(2P3/2) and I*(2P1/2) photoionization cross sections are determined at these wavelengths by using the known branching fractions for the photodissociation at 266 nm. Velocity map ion images indicate that the branching fraction for I(2P3/2) atoms is non-zero, and yield a value of 0.07 ± 0.01. Interestingly, the translational energy distribution extracted from the image shows that the translational energy of the I(2P3/2) fragments is significantly smaller than that of the I*(2P1/2) atoms. This observation indicates the internal rotational/vibrational energy of the CH3 co-fragment is very high in the I(2P3/2) channel. The results can be interpreted in a manner consistent with the previous measurements, and provide a more complete picture of the dissociation dynamics of this prototypical molecule.

  3. A new look at the photodissociation of methyl iodide at 193 nm

    SciTech Connect

    Xu, Hong; Pratt, S. T.

    2013-12-07

    A new measurement of the photodissociation of CH{sub 3}I at 193 nm is reported in which we use a combination of vacuum ultraviolet photoionization and velocity map ion imaging. The iodine photofragments are probed by single-photon ionization at photon energies above and below the photoionization threshold of I({sup 2}P{sub 3/2}). The relative I({sup 2}P{sub 3/2}) and I{sup *}({sup 2}P{sub 1/2}) photoionization cross sections are determined at these wavelengths by using the known branching fractions for the photodissociation at 266 nm. Velocity map ion images indicate that the branching fraction for I({sup 2}P{sub 3/2}) atoms is non-zero, and yield a value of 0.07 ± 0.01. Interestingly, the translational energy distribution extracted from the image shows that the translational energy of the I({sup 2}P{sub 3/2}) fragments is significantly smaller than that of the I{sup *}({sup 2}P{sub 1/2}) atoms. This observation indicates the internal rotational/vibrational energy of the CH{sub 3} co-fragment is very high in the I({sup 2}P{sub 3/2}) channel. The results can be interpreted in a manner consistent with the previous measurements, and provide a more complete picture of the dissociation dynamics of this prototypical molecule.

  4. 193 nm Ultraviolet Photodissociation Mass Spectrometry for Phosphopeptide Characterization in the Positive and Negative Ion Modes.

    PubMed

    Robinson, Michelle R; Taliaferro, Juliana M; Dalby, Kevin N; Brodbelt, Jennifer S

    2016-08-01

    Advances in liquid chromatography tandem mass spectrometry (LC-MS/MS) have permitted phosphoproteomic analysis on a grand scale, but ongoing challenges specifically associated with confident phosphate localization continue to motivate the development of new fragmentation techniques. In the present study, ultraviolet photodissociation (UVPD) at 193 nm is evaluated for the characterization of phosphopeptides in both positive and negative ion modes. Compared to the more standard higher energy collisional dissociation (HCD), UVPD provided more extensive fragmentation with improved phosphate retention on product ions. Negative mode UVPD showed particular merit for detecting and sequencing highly acidic phosphopeptides from alpha and beta casein, but was not as robust for larger scale analysis because of lower ionization efficiencies in the negative mode. HeLa and HCC70 cell lysates were analyzed by both UVPD and HCD. While HCD identified more phosphopeptides and proteins compared to UVPD, the unique matches from UVPD analysis could be combined with the HCD data set to improve the overall depth of coverage compared to either method alone. PMID:27425180

  5. Product channels in the 193-nm photodissociation of HCNO (fulminic acid)

    NASA Astrophysics Data System (ADS)

    Feng, Wenhui; Hershberger, John F.

    2016-06-01

    IR diode laser spectroscopy was used to detect the products of HCNO (fulminic acid) photolysis at 193 nm. Six product channels are energetically possible at this photolysis wavelength: O + HCN, H + NCO/CNO, CN + OH, CO + NH, NO + CH and HNCO. In some experiments, isotopically labeled 15N18O, C2D6 or C6H12 reagents were included into the photolysis mixture in order to suppress and/or redirect possible secondary reactions. HCN, OC18O, 15N15NO, CO, DCN and HNCO molecules were detected upon laser photolysis of HCNO/reagents/buffer gas mixtures. Analysis of the yields of product molecules leads to the following photolysis quantum yields: ϕ1a (O + HCN) = 0.38 ± 0.04, ϕ1b (H + (NCO)) = 0.07 ± 0.02, ϕ1c (CN + OH) = 0.24 ± 0.03, ϕ1d (CO + NH(a1Δ)) < 0.22 ± 0.1, ϕ1e (HNCO) = 0.02 ± 0.01 and ϕ1f (CH + NO) = 0.21 ± 0.1, respectively.

  6. Laser-written binary OMOG photomasks for high-volume non-critical 193-nm photolithographic layers

    NASA Astrophysics Data System (ADS)

    Rivière, Rémi; Gopalakrishnan, Selvi; Mazur, Martin; Öner, Nevzat; Mühle, Sven; Seltmann, Rolf

    2014-10-01

    Photomasks are key elements of photolithographic processes, implying that their degradation must be reliably monitored and strongly mitigated. Indeed, the photo-induced oxidation of Cr in Cr On Glass (COG) photomasks and the concomitant electrostatic-field migration present in high-volume production using 193-nm photolithographic scanners severely deteriorate the pattern transfer quality, therefore limiting the lifetime of these reticles. To moderate this effect, Opaque MoSi On Glass (OMOG) photomasks, significantly less prone to such degradation, are currently being massively used in leading-edge microfabrication flows. The type of mask fabrication process normally used involving ebeam writing is however not adapted for non-critical photolithographic layers that do not yet benefit from its inherent performances but still suffer from its high cost and its long processing time. It is therefore proposed in this work to combine the simplicity of laser writing and the resistance of MoSi to degradation by using laser-written binary OMOG photomasks for the non-critical layers (e.g. ion-implantation) of a 28-nm production flow. To evaluate one of this new reticle, its pattern transfer fidelity is compared to the one of a laser-written binary COG mask already qualified for production from a photolithographic quality perspective, both masks being treated using the same optical proximity correction (OPC) model. Dispersive and dissipative properties, critical dimension uniformity, pattern linearity and pattern proximity are directly measured on wafer level, subsequently revealing that both photomasks match in terms of OPC parameters. The utilized OPC model is moreover proven robust against the use of both types of masks, consequently making the conversion from COG to OMOG particularly simple. These experimental results therefore qualify the new mask fabrication type and pave the way for a major utilization in high-volume production.

  7. Electron Beam Lithography

    NASA Astrophysics Data System (ADS)

    Harriott, Lloyd R.

    1997-04-01

    Electron beams have played a significant role in semiconductor technology for more than twenty years. Early electron beam machines used a raster scanned beam spot to write patterns in electron-sensitive polymer resist materials. The main application of electron beam lithography has been in mask making. Despite the inherently high spatial resolution and wide process margins of electron beam lithography, the writing rate for semiconductor wafers has been too slow to be economically viable on a large scale. In the late 1970's, variable shape electron beam writing was developed, projecting a rectangular beam whose size can be varied for each "shot" exposure of a particular pattern, allowing some integrated circuits to be made economically where a variety of "customized" patterns are desired. In the cell or block projection electron beam exposure technique, a unit cell of a repetitive pattern is projected repeatedly to increase the level of parallelism. This can work well for highly repetitive patterns such as memory chips but is not well suited to complex varying patterns such as microprocessors. The rapid progress in the performance of integrated circuits has been largely driven by progress in optical lithography, through improvements in lens design and fabrication as well as the use of shorter wavelengths for the exposure radiation. Due to limitations from the opacity of lens and mask materials, it is unlikely that conventional optical printing methods can be used at wavelengths below 193 nm or feature sizes much below 180 nm. One candidate technology for a post-optical era is the Scattering with Angular Limitation Projection Electron-beam Lithography (SCALPEL) approach, which combines the high resolution and wide process latitude inherent in electron beam lithography with the throughput of a parallel projection system. A mask consisting of a low atomic number membrane and a high atomic number pattern layer is uniformly illuminated with high energy (100 ke

  8. Polymer-based optical interconnects using nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Boersma, Arjen; Wiegersma, Sjoukje; Offrein, Bert J.; Duis, Jeroen; Delis, Jos; Ortsiefer, Markus; van Steenberge, Geert; Karpinen, Mikko; van Blaaderen, Alfons; Corbett, Brian

    2013-02-01

    The increasing request for higher data speeds in the information and communication technology leads to continuously increasing performance of microprocessors. This has led to the introduction of optical data transmission as a replacement of electronic data transmission in most transmission applications longer than 10 meters. However, a need remains for optical data transmission for shorter distances inside the computer. This paper gives an overview of the Joint European project FIREFLY, in which new polymer based single mode waveguides are developed for integration with VCSELs, splitters and fibers that will be manufactured using multi-layer nanoimprint lithography (NIL). Innovative polymers, new applications of nano-technology, new methods for optical coupling between components, and the integration of all these new components are the technical ingredients of this ambitious project.

  9. Photolysis of Pure Solid O3 and O2 Films at 193nm

    NASA Technical Reports Server (NTRS)

    Raut, U.; Loeffler, M. J.; Fama, M.; Baragiola, R. A.

    2011-01-01

    We studied quantitatively the photochemistry of solid O3 and O2 films at 193 nm and 22 K with infrared spectroscopy and microgravimetry. Photolysis of pure ozone destroyed O3, but a small amount of ozone remained in the film at high fluence. Photolysis of pure O2 produced O3 in an amount that increased with photon fluence to a stationary level. For both O2 and O3 films, the O3:O2 ratio at large fluences is ?0.07, about two orders of magnitude larger than those obtained in gas phase photolysis. This enhancement is attributed to the increased photodissociation of O2 due to photoabsorption by O2 dimers, a process significant at solid-state densities. We obtain initial quantum yield for ozone synthesis from solid oxygen, phi (O3) = 0.24 0.06, and quantum yields for destruction of O3 and O2 in their parent solids, phi(-O3) = 1.0 0.2 and phi(-O2) = 0.36 0.1. Combined with known photoabsorption cross sections, we estimate probabilities for geminate recombination of 0.5 0.1 for O3 fragments and 0.88 0.03 for oxygen atoms from O2 dissociation. Using a single parameter kinetic model, we deduce the ratio of reaction cross sections for an O atom with O2 vs. O3 to be 0.1 0.2. The general good agreement of the model with the data suggests the validity of the central assumption of efficient energy and spin relaxation of photofragments in the solid prior to their reactions with other species.

  10. Photodissociation of vinyl cyanide at 193 nm: Nascent product distributions of the molecular elimination channels

    SciTech Connect

    Wilhelm, Michael J.; Nikow, Matthew; Letendre, Laura; Dai Hailung

    2009-01-28

    The photodissociation dynamics of vinyl cyanide (H{sub 2}CCHCN, acrylonitrile) and deuterated vinyl cyanide (D{sub 2}CCDCN) at 193 nm are examined using time-resolved Fourier transform infrared emission spectroscopy. Prior photofragment translational spectroscopy studies [D. A. Blank et al., J. Chem. Phys. 108, 5784 (1998)] of the dissociation have observed the presence of four main dissociation channels; two molecular and two radical in nature. However, with the exception of a<0.01 quantum yield determined for the CN radical loss channel, the branching ratios of the remaining three elimination channels were not measured. The time-resolved emission spectra, including those from the deuterated samples, revealed the presence of acetylene, hydrogen cyanide (HCN), as well as the energetically less stable isomer hydrogen isocyanide (HNC). Acetylene is found in two distinct energetic distributions, suggesting that both three- and four-centered elimination reactions are occurring significantly in the dissociation. In contrast to prior ab initio studies that have suggested the dominant nature of the three-center elimination of molecular hydrogen (H{sub 2}) and cyanovinylidene (:C=CHCN), we find this reaction channel to be of little importance as there is no evidence to support any significant presence of rovibrationally excited cyanoacetylene. Spectral modeling of the product distributions allows for the first experimental determination of the relative occurrence of the three-centered (resulting in HCN+vinylidene) versus four-centered (HNC+acetylene) elimination channels as 3.34 to 1.00, in contrast to the previously calculated value of 126:1. Rice-Ramsperger-Kassel-Marcus analysis depicts that the transition state energy of the four-centered reaction should be about 10 kcal mole{sup -1} lower than the three-centered reaction.

  11. Dynamics of ions produced by laser ablation of several metals at 193 nm

    SciTech Connect

    Baraldi, G.; Perea, A.; Afonso, C. N.

    2011-02-15

    This work reports the study of ion dynamics produced by ablation of Al, Cu, Ag, Au, and Bi targets using nanosecond laser pulses at 193 nm as a function of the laser fluence from threshold up to 15 J cm{sup -2}. An electrical (Langmuir) probe has been used for determining the ion yield as well as kinetic energy distributions. The results clearly evidence that ablation of Al shows unique features when compared to other metals. The ion yield both at threshold (except for Al, which shows a two-threshold-like behavior) and for a fixed fluence above threshold scale approximately with melting temperature of the metal. Comparison of the magnitude of the yield reported in literature using other wavelengths allows us to conclude its dependence with wavelength is not significant. The evolution of the ion yield with fluence becomes slower for fluences above 4-5 J cm{sup -2} with no indication of saturation suggesting that ionization processes in the plasma are still active up to 15 J cm{sup -2} and production of multiple-charged ions are promoted. This dependence is mirrored in the proportion of ions with kinetic energies higher than 200 eV. This proportion is not significant around threshold fluence for all metals except for Al, which is already 20%. The unique features of Al are discussed in terms of the energy of laser photons (6.4 eV) that is enough to induce direct photoionization from the ground state only in the case of this metal.

  12. Photoinitiated decomposition of substituted ethylenes: The photodissociation of vinyl chloride and acrylonitrile at 193 nm

    SciTech Connect

    Blank, D.A.; Suits, A.G.; Lee, Y.T.

    1997-04-01

    Ethylene and its substituted analogues (H{sub 2}CCHX) are important molecules in hydrogen combustion. As the simplest {pi}-bonded hydrocarbons these molecules serve as prototypical systems for understanding the decomposition of this important class of compounds. The authors have used the technique of photofragment translational spectroscopy at beamline 9.0.2.1 to investigate the dissociation of vinyl chloride (X=Cl) and acrylonitrile (X=CN) following absorption at 193 nm. The technique uses a molecular beam of the reactant seeded in helium which is crossed at 90 degrees with the output of an excimer laser operating on the ArF transition, 193.3 nm. The neutral photoproducts which recoil out of the molecular beam travel 15.1 cm where they are photoionized by the VUV undulator radiation, mass selected, and counted as a function of time. The molecular beam source is rotatable about the axis of the dissociation laser. The authors have directly observed all four of the following dissociation channels for both systems: (1) H{sub 2}CCHX {r_arrow} H + C{sub 2}H{sub 2}X; (2) H{sub 2}CCHX {r_arrow} X + C{sub 2}H{sub 3}; (3) H{sub 2}CCHX {r_arrow} H{sub 2} + C{sub 2}HX; and (4) H{sub 2}CCHX {r_arrow} HX + C{sub 2}H{sub 2}. They measured translational energy distributions for all of the observed channels and measured the photoionization onset for many of the photoproducts which provided information about their chemical identity and internal energy content. In the case of acrylonitrile, selective product photoionization provided the ability to discriminate between channels 2 and 4 which result in the same product mass combination.

  13. Block-based mask optimization for optical lithography.

    PubMed

    Ma, Xu; Song, Zhiyang; Li, Yanqiu; Arce, Gonzalo R

    2013-05-10

    Pixel-based optical proximity correction (PBOPC) methods have been developed as a leading-edge resolution enhancement technique (RET) for integrated circuit fabrication. PBOPC independently modulates each pixel on the reticle, which tremendously increases the mask's complexity and, at the same time, deteriorates its manufacturability. Most current PBOPC algorithms recur to regularization methods or a mask manufacturing rule check (MRC) to improve the mask manufacturability. Typically, these approaches either fail to satisfy manufacturing constraints on the practical product line, or lead to suboptimal mask patterns that may degrade the lithographic performance. This paper develops a block-based optical proximity correction (BBOPC) algorithm to pursue the optimal masks with manufacturability compliance, where the mask is shaped by a set of overlapped basis blocks rather than pixels. BBOPC optimization is formulated based on a vector imaging model, which is adequate for both dry lithography with lower numerical aperture (NA), and immersion lithography with hyper-NA. The BBOPC algorithm successively optimizes the main features (MF) and subresolution assist features (SRAF) based on a modified conjugate gradient method. It is effective at smoothing any unmanufacturable jogs along edges. A weight matrix is introduced in the cost function to preserve the edge fidelity of the printed images. Simulations show that the BBOPC algorithm can improve lithographic imaging performance while maintaining mask manufacturing constraints. PMID:23669851

  14. Method for the protection of extreme ultraviolet lithography optics

    DOEpatents

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  15. Optical design of a 1-to-1 lithography projection

    NASA Astrophysics Data System (ADS)

    Huang, Jiun-Woei

    2016-08-01

    A 1:1 lithography projection has been designed and is fabricated for a 3D integrated circuit fabrication platform. Using a dual triplet as an initial type to form a one-to-one lens and applying a tele-centric structure, the optical common components of an optical system have been designed. The tolerance of the mechanical mounts is simulated by tilting the mounts to single and two aspheric surfaces of lens to show the degradation in the modulation transfer function; thus, the single aspheric-tilted mount in a system is suggested to reach the precision. Furthermore, Koehler illumination is used. By applying partial coherence analysis, the optimized relative numerical aperture was found. As the system is built, optimized performance should be expected.

  16. Optical design of a 1-to-1 lithography projection

    NASA Astrophysics Data System (ADS)

    Huang, Jiun-Woei

    2016-10-01

    A 1:1 lithography projection has been designed and is fabricated for a 3D integrated circuit fabrication platform. Using a dual triplet as an initial type to form a one-to-one lens and applying a tele-centric structure, the optical common components of an optical system have been designed. The tolerance of the mechanical mounts is simulated by tilting the mounts to single and two aspheric surfaces of lens to show the degradation in the modulation transfer function; thus, the single aspheric-tilted mount in a system is suggested to reach the precision. Furthermore, Koehler illumination is used. By applying partial coherence analysis, the optimized relative numerical aperture was found. As the system is built, optimized performance should be expected.

  17. Generation of intense 10-ps, 193-nm pulses using simple distributed feedback dye lasers and an ArF(*) amplifier.

    PubMed

    Hatten, D L; Cui, Y; Iii, W T; Mikes, T; Goldhar, J

    1992-11-20

    A pair of holographic distributed feedback dye lasers is used to generate 10-ps pulses at two selected wavelengths that are mixed in a BBO crystal to produce a pulse ~ 10 ps in duration at 193 nm. This seed pulse is subsequently amplified in an ArF(*) excimer laser to an energy of 10-15 mJ with <40 microJ in amplified spontaneous emission. The pulses are nearly transform limited and diffraction limited.

  18. E-Beam Exposure Of Optical Resist For Mask Lithography

    NASA Astrophysics Data System (ADS)

    Mitchell, Joseph; Walker, David M.

    1987-06-01

    E-Beam resists such as PBS have been used successfully by the mask making industry for many years, however, PBS suffers from a few major disadvantages. These disadvantages include safety issues stemming from solvent processing, lack of latitude, particularly with respect to humidity during development, poor plasma durability and a long, many step process which increases the probability of added defects. This paper describes a process developed to utilize MP 2400-17 optical photoresist for electron beam mask lithography and presents production results achieved. The benefits of optical photoresist over conventional positive EB resists are aqueous processing, wide and controllable process latitude, plasma durability, increased resolution and lower achievable defect densities. In addition, E-Beam exposed optical photo resists can be processed to produce a high resolution negative image, potentially replacing COP. One major drawback is decreased exposure sensitivity. Although the required multi-write scans increase total write time, the averaging effect of multiple exposures do produce superior line edge definition and resolution for a given address unit size. An analysis is presented demonstrating that the reduced process time and complexity, coupled with increased yield, can more than offset the cost of increased write time.

  19. Sub-Optical Lithography With Nanometer Definition Masks

    NASA Technical Reports Server (NTRS)

    Hartley, Frank T.; Malek, Chantal Khan; Neogi, Jayant

    2000-01-01

    Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

  20. Nanofabrication at 1nm resolution by quantum optical lithography (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Pavel, Eugen

    2015-08-01

    A major problem in the optical lithography was the diffraction limit. Here, we report and demonstrate a lithography method, Quantum Optical Lithography [1,2], able to attain 1 nm resolution by optical means using new materials (fluorescent photosensitive glass-ceramics and QMC-5 resist). The performance is several times better than that described for any optical or Electron Beam Lithography (EBL) methods. In Fig. 1 we present TEM images of 1 nm lines recorded at 9.6 m/s. a) b) Fig. 1 TEM images of: a) multiple 1 nm lines written in a fluorescent photosensitive glass-ceramics sample; b) single 1 nm line written in QMC-5 resist. References [1] E. Pavel, S. Jinga, B.S. Vasile, A. Dinescu, V. Marinescu, R. Trusca and N. Tosa, "Quantum Optical Lithography from 1 nm resolution to pattern transfer on silicon wafer", Optics and Laser Technology, 60 (2014) 80-84. [2] E. Pavel, S. Jinga, E. Andronescu, B.S. Vasile, G. Kada, A. Sasahara, N. Tosa, A. Matei, M. Dinescu, A. Dinescu and O.R. Vasile, "2 nm Quantum Optical Lithography", Optics Communications,291 (2013) 259-263

  1. Improving vacuum-UV (VUV) photolysis of organic compounds in water with a phosphor converted xenon excimer lamp emitting at 193 nm.

    PubMed

    Schulze-Hennings, U; Pötschke, L; Wietor, C; Bringmann, S; Braun, N; Hayashi, D; Linnemann, V; Pinnekamp, J

    2016-01-01

    A novel vacuum ultraviolet excimer lamp emitting light at 193 nm was used to investigate the degradation of organic micropollutants in ultrapure water and wastewater treatment plant (WWTP) effluent. Overall, light at 193 nm proved to be efficient to degrade the investigated micropollutants (diclofenac, diatrizoic acid, sulfamethoxazole). Experiments with WWTP effluent proved the ability of radiation at 193 nm to degrade micropollutants which are hardly removed with commonly used oxidation technologies like ozonation (diatrizoic acid, ethylenediaminetetraacetic acid, perfluorooctanoic acid, and perfluorooctanesulfonic acid). PMID:27533863

  2. The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Neutral atomic zinc and oxygen emission

    SciTech Connect

    Kahn, E. H.; Langford, S. C.; Dickinson, J. T.; Boatner, Lynn A

    2013-01-01

    We report mass-resolved time-of-flight measurements of neutral particles from the surface of single-crystal ZnO during pulsed 193-nm irradiation at laser fluences below the threshold for avalanche breakdown. The major species emitted are atomic Zn and O. We examine the emissions of atomic Zn as a function of laser fluence and laser exposure. Defects at the ZnO surface appear necessary for the detection of these emissions. Our results suggest that the production of defects is necessary to explain intense sustained emissions at higher fluence. Rapid, clean surface etching and high atomic zinc kinetic energies seen at higher laser fluences are also discussed.

  3. Statistical Examination of the a and a + 1 Fragment Ions from 193 nm Ultraviolet Photodissociation Reveals Local Hydrogen Bonding Interactions

    NASA Astrophysics Data System (ADS)

    Morrison, Lindsay J.; Rosenberg, Jake A.; Singleton, Jonathan P.; Brodbelt, Jennifer S.

    2016-09-01

    Dissociation of proteins and peptides by 193 nm ultraviolet photodissociation (UVPD) has gained momentum in proteomic studies because of the diversity of backbone fragments that are produced and subsequent unrivaled sequence coverage obtained by the approach. The pathways that form the basis for the production of particular ion types are not completely understood. In this study, a statistical approach is used to probe hydrogen atom elimination from a + 1 radical ions, and different extents of elimination are found to vary as a function of the identity of the C-terminal residue of the a product ions and the presence or absence of hydrogen bonds to the cleaved residue.

  4. Photodissociation dynamics of the methyl perthiyl radical at 248 and 193 nm using fast-beam photofragment translational spectroscopy

    NASA Astrophysics Data System (ADS)

    Harrison, Aaron W.; Ryazanov, Mikhail; Sullivan, Erin N.; Neumark, Daniel M.

    2016-07-01

    The photodissociation dynamics of the methyl perthiyl radical (CH3SS) have been investigated using fast-beam coincidence translational spectroscopy. Methyl perthiyl radicals were produced by photodetachment of the CH3SS- anion followed by photodissociation at 248 nm (5.0 eV) and 193 nm (6.4 eV). Photofragment mass distributions and translational energy distributions were measured at each dissociation wavelength. Experimental results show S atom loss as the dominant (96%) dissociation channel at 248 nm with a near parallel, anisotropic angular distribution and translational energy peaking near the maximal energy available to ground state CH3S and S fragments, indicating that the dissociation occurs along a repulsive excited state. At 193 nm, S atom loss remains the major fragmentation channel, although S2 loss becomes more competitive and constitutes 32% of the fragmentation. The translational energy distributions for both channels are very broad at this wavelength, suggesting the formation of the S2 and S atom products in several excited electronic states.

  5. Photodissociation dynamics of the methyl perthiyl radical at 248 and 193 nm using fast-beam photofragment translational spectroscopy.

    PubMed

    Harrison, Aaron W; Ryazanov, Mikhail; Sullivan, Erin N; Neumark, Daniel M

    2016-07-14

    The photodissociation dynamics of the methyl perthiyl radical (CH3SS) have been investigated using fast-beam coincidence translational spectroscopy. Methyl perthiyl radicals were produced by photodetachment of the CH3SS(-) anion followed by photodissociation at 248 nm (5.0 eV) and 193 nm (6.4 eV). Photofragment mass distributions and translational energy distributions were measured at each dissociation wavelength. Experimental results show S atom loss as the dominant (96%) dissociation channel at 248 nm with a near parallel, anisotropic angular distribution and translational energy peaking near the maximal energy available to ground state CH3S and S fragments, indicating that the dissociation occurs along a repulsive excited state. At 193 nm, S atom loss remains the major fragmentation channel, although S2 loss becomes more competitive and constitutes 32% of the fragmentation. The translational energy distributions for both channels are very broad at this wavelength, suggesting the formation of the S2 and S atom products in several excited electronic states.

  6. Patterning strategy for low-K1 lithography

    NASA Astrophysics Data System (ADS)

    Hwang, David H.; Cheng, Wen-Hao

    2004-08-01

    Moore's law has been guiding the semiconductor industry for four decades. Lithography is the key enabler to keep the industry on the technology treadmill. Lithographers have been facing unprecedented challenges during last five years to keep the technology on the technology treadmill by developing various kinds of resolution enhancement techniques (RETs). In low K1 regime, co-optimization of design, layout mask, OPC, lithography and etching is the primary strategy to deliver a production-worthy patterning solution. Optical shrink is not a trivial task anymore. Intel always pursues parallel patterning techniques based on the dual exposure wavelength patterning strategy. While EUVL is the preferred patterning solution for 32nm node, 193nm immersion lithography with super high NA illumination is one of the parallel patterning strategies. The effects of polarization at super high NA illumination on mask technology, such as lens reduction ratio, blank absorber thickness and image imbalance correction, and restriction on design layout are addressed in this paper. Contact patterning is extremely challenging at low K1. Contact shape factor (circularity) which impacts the design rule will be discussed in this paper. Explosion of data file size and mask write time, stringent mask CD control and mask defect disposition are direct consequences of low-K1/high-MEEF (Mask Error Enhancement Factor) lithography. Mask makers alone cannot resolve the challenges in a cost effective manner. A seamless integration solution is a must.

  7. Fundamental study of optical threshold layer approach towards double exposure lithography

    NASA Astrophysics Data System (ADS)

    Gu, Xinyu; Berro, Adam J.; Cho, Younjin; Jen, Kane; Lee, Saul; Ngai, Tomoki; Ogata, Toshiyuki; Durand, William J.; Sundaresan, Arunkumar; Lancaster, Jeffrey R.; Jockusch, Steffen; Zimmerman, Paul; Turro, Nicholas J.; Willson, C. G.

    2009-03-01

    193 immersion lithography has reached its maximal achievable resolution. There are mainly two lithographic strategies that will enable continued increase in resolution. Those are being pursued in parallel. The first is extreme ultraviolet (EUV) lithography and the second is double patterning (exposure) lithography. EUV lithography is counted on to be available in 2013 time frame for 22 nm node. Unfortunately, this technology has suffered several delays due to fundamental problems with source power, mask infrastructure, metrology and overall reliability. The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node. This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography. Compared to DPL, DEL offers advantages in overlay and process time, thus reducing the cost-of-ownership (CoO). However, DEL requires new materials that have a non-linear photoresponse. So far, several approaches were proposed for double exposure lithography, from which Optical Threshold Layer (OTL) was found to give the best lithography performance according to the results of the simulation. This paper details the principle of the OTL approach. A photochromic polymer was designed and synthesized. The feasibility of the material for application of DEL was explored by a series of evaluations.

  8. Resists for next generation lithography

    SciTech Connect

    Brainard, Robert L.; Barclay, George G.; Anderson, Erik H.; Ocola, Leonidas E.

    2001-10-03

    Four Next Generation Lithographic options (EUV, x-ray, EPL, IPL) are compared against four current optical technologies (i-line, DUV, 193 nm, 157 nm) for resolution capabilities based on wavelength. As the wavelength of the incident radiation decreases, the nature of the interaction with the resist changes. At high energies, optical density is less sensitive to molecular structure then at 157 nm.

  9. Prevention of optics and resist contamination in 300-mm lithography: improvements in chemical air filtration

    NASA Astrophysics Data System (ADS)

    Kinkead, Devon A.; Grayfer, Anatoly; Kishkovich, Oleg P.

    2001-08-01

    Atmospheric pressure deep UV lithography using fast chemically amplified photoresists will be the mainstay of semiconductor production into the foreseeable future. Airborne molecular contamination (AMC) in the form of bases and condensable organic and inorganic materials however, threaten both sensitive optics and modern resists thereby creating a host of yield limiting contamination issues. Past work by Kunz at MIT has described photo-induced organic contamination of lithographic optics as a significant concern in leading-edge lithography. Moreover, Kinkead and Ercken, and Kishkovich and Dean have published work on the impact of base contamination on CD uniformity in modern photoresists. Herein, the authors discuss solutions to control both optics and resist contamination in a single compact filter system for advanced lithography. The results of this work suggest that resist and optics contamination can be controlled as we enter the era of low K1 factor <150nm/300mm-device production.

  10. 193 nm Ultraviolet Photodissociation Mass Spectrometry of Tetrameric Protein Complexes Provides Insight into Quaternary and Secondary Protein Topology.

    PubMed

    Morrison, Lindsay J; Brodbelt, Jennifer S

    2016-08-31

    Protein-protein interfaces and architecture are critical to the function of multiprotein complexes. Mass spectrometry-based techniques have emerged as powerful strategies for characterization of protein complexes, particularly for heterogeneous mixtures of structures. In the present study, activation and dissociation of three tetrameric protein complexes (streptavidin, transthyretin, and hemoglobin) in the gas phase was undertaken by 193 nm ultraviolet photodissociation (UVPD) for the characterization of higher order structure. High pulse energy UVPD resulted in the production of dimers and low charged monomers exhibiting symmetrical charge partitioning among the subunits (the so-called symmetrical dissociation pathways), consistent with the subunit organization of the complexes. In addition, UVPD promoted backbone cleavages of the monomeric subunits, the abundances of which corresponded to the more flexible loop regions of the proteins. PMID:27480400

  11. Collision-induced desorption in 193-nm photoinduced reactions in (O{sub 2}+CO) adlayers on Pt(112)

    SciTech Connect

    Han Song; Ma Yunsheng; Matsushima, Tatsuo

    2005-09-01

    The spatial distribution of desorbing O{sub 2} and CO{sub 2} was examined in 193-nm photoinduced reactions in O{sub 2}+CO adlayers on stepped Pt (112)=[(s)3(111)x(001)]. The O{sub 2} desorption collimated in inclined ways in the plane along the surface trough, confirming the hot-atom collision mechanism. In the presence of CO(a), the product CO{sub 2} desorption also collimated in an inclined way, whereas the inclined O{sub 2} desorption was suppressed. The inclined O{sub 2} and CO{sub 2} desorption is explained by a common collision-induced desorption model. At high O{sub 2} coverage, the CO{sub 2} desorption collimated closely along the (111) terrace normal.

  12. Photolytic decomposition of adsorbed tellurium and cadmium alkyl species at 295 K upon 193 nm photon irradiation

    NASA Astrophysics Data System (ADS)

    Stinespring, C. D.; Freedman, A.

    1988-06-01

    The photolytic decomposition of adspecies formed by the adsorption of tellurium and cadmium alkyls at 295 K under ultrahigh-vacuum conditions has been studied using x-ray photoelectron spectroscopy. Dimethyl tellurium adsorbed at submonolayer coverages on a polycrystalline gold substrate has been observed to undergo nearly quantitative photolytic decomposition at 193 nm to form metallic tellurium. The hydrocarbon photofragments produced in the decomposition lead to negligible carbon contamination on the gold surface. Dimethyl cadmium adsorbed on amorphous SiO2 both desorbs and decomposes to form the metal adspecies. In this case, most of the carbon remains as hydrocarbon and carbidic contaminants. Monomethyl adspecies of both metals formed on Si(100) and GaAs(100) surfaces are inactive with respect to decomposition at the low fluences (0.25 mJ cm-2) used in these experiments; however, substantial desorption is observed.

  13. Electron-beam lithography for micro and nano-optical applications

    NASA Technical Reports Server (NTRS)

    Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.

    2005-01-01

    Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

  14. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    SciTech Connect

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters {beta}(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their {beta}(t) distributions are insensitive to the photon energy. Dissociation to H{sub 2}CO+C{sub 2}H{sub 4} is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H{sub 2}CO+C{sub 2}H{sub 4}. The observation of H{sub 2} and H atoms, {approx}1% in branching, indicates that products H{sub 2}CO and C{sub 2}H{sub 4} spontaneously decompose to only a small extent. Most HCO, C{sub 2}H{sub 3}, and C{sub 2}H{sub 2} ions originate from dissociative photoionization of products H{sub 2}CO and C{sub 2}H{sub 4}. Except atomic H and H{sub 2}, the photoproducts have large angular anisotropies, {beta}{>=}-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  15. Nanofabrication of Optical Elements for SXR and EUV Applications: Ion Beam Lithography as a New Approach

    SciTech Connect

    Lenz, J.; Krupp, N.; Irsen, S.; Wilhein, T.

    2011-09-09

    Diffractive optical elements are important components for applications in soft x-ray and extreme ultraviolet radiation. At present, the standard fabrication method for such optics is based on electron beam lithography followed by nanostructuring. This requires a series of complex processes including exposure, reactive ion-etching, and electro-plating. We report on experiments showing the single-step fabrication of such elements using ion beam lithography. Both transmission and reflection gratings were fabricated and successfully implemented as spectrometers at laboratory soft x-ray sources. Additionally, first steps toward zone plate fabrication are described.

  16. Polymer and Material Design for Lithography From 50 nm Node to the sub-16 nm Node

    NASA Astrophysics Data System (ADS)

    Trefonas, Peter

    2012-02-01

    Microlithography is one of the technologies which enabled the Information Age. Developing at the intersection of optical physics, polymer science and photochemistry, the need for ever smaller high fidelity patterns to build integrated circuits is currently pushing the technology evolution from 193 nm immersion lithography to extreme ultraviolet lithography (13.5 nm) to alternate patterning technologies such as directed self assembly (DSA) of block copolymers. Essential to the success of this progression is a rapid application of new concepts and materials in polymer science. We will discuss the requirements for 193 immersion lithography and how advanced acrylic random polymers are being designed with chemical amplification functionality to meet these needs. The special requirements of a water immersion lithography led to the invention and rapid commercial application of surface assembled embedded barrier layer polymers. Design of polymers for EUV lithography is having to respond to much different challenges, prominent being the dearth of photons in the exposure step, and the other being how to maximize the efficiency of photoacid production. In parallel, alternative lithographic approaches are being developed using directed self assembly of block copolymers which realize pattern frequency multiplication. We will update with our progress in the applications of polymers designed for DSA.

  17. Material design for immersion lithography with high refractive index fluid (HIF)

    NASA Astrophysics Data System (ADS)

    Miyamatsu, Takashi; Wang, Yong; Shima, Motoyuki; Kusumoto, Shiro; Chiba, Takashi; Nakagawa, Hiroki; Hieda, Katsuhiko; Shimokawa, Tsutomu

    2005-05-01

    ArF immersion lithography is considered as the most promising next generation technology which enables to a 45 nm node device manufacturing and below. Not only depth of focus enlargement, immersion lithography enables to use hyper numerical aperture (NA) larger than 1.0 and achieve higher resolution capability. For 193nm lithography, water is an ideal immersion fluid, providing suitable refractive index and transmission properties. Furthermore the higher refractive index fluid is expected to provide a potential extension of optical lithography to the 32 nm node. This paper describes the material design for immersion lithography with high refractive index fluid. We have developed promising high refractive index fluids which satisfy the requirement for immersion fluid by screening wide variety of organic compounds. The physical and chemical properties of this high refractive index fluid are discussed in detail. Also the topcoat material which has good matching with high refractive index fluid is developed. While this topcoat material is soluble into aqueous TMAH developer, it does not dissolve into water or high refractive index fluid and gives suitable contact angle for immersion scan exposure. Immersion exposure experiments using high refractive index fluid with and w/o topcoat material was carried out and its lithographic performance is presented in this paper.

  18. Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

    SciTech Connect

    Brihoum, M.; Ramos, R.; Menguelti, K.; Cunge, G.; Pargon, E.; Joubert, O.

    2013-01-07

    HBr plasma treatments are widely used in nanoscale lithographic technologies to increase the plasma etch resistance of 193 nm photoresist masks as well as to decrease their Line Width Roughness (LWR). VUV irradiation of the photoresist is known to play a major role in this process by inducing polymer chains rearrangement and finally LWR reduction. However, in the plasma environment (i.e., with radical and ion bombardment), the interaction layer formed at the resist surface perturbs this mechanism and a lower LWR reduction is achieved compared to VUV only treatment. So far the nature of the interaction layer, its formation mechanism and its relation with the resist pattern LWR were all unclear. In this paper, we show that a graphite-like layer is formed on the resist patterns by the redeposition of carbon-based species originating from the plasma dissociation of outgassed photo-etched resist moieties. We show that the presence of this layer inhibits the LWR minimization and causes an increase in the LWR when it becomes thick enough (i.e., a few nanometers). We present evidences that the difference in the mechanical properties of the graphite-like top layer which coats the resist patterns and the bulk of the resist patterns is correlated to the LWR after plasma treatment. We can conclude that the optimization of an HBr cure process relies on the minimization of the carbon redeposition while keeping a significant VUV light flux and we show that this can be achieved by using pulsed plasma processes.

  19. Surface morphology and subsurface damaged layer of various glasses machined by 193-nm ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Liao, Yunn-shiuan; Chen, Ying-Tung; Chao, Choung-Lii; Liu, Yih-Ming

    2005-01-01

    Owing to the high bonding energy, most of the glasses are removed by photo-thermal rather than photo-chemical effect when they are ablated by the 193 or 248nm excimer lasers. Typically, the machined surface is covered by re-deposited debris and the sub-surface, sometimes surface as well, is scattered with micro-cracks introduced by thermal stress generated during the process. This study aimed to investigate the nature and extent of the surface morphology and sub-surface damaged (SSD) layer induced by the laser ablation. The effects of laser parameters such as fluence, shot number and repetition rate on the morphology and SSD were discussed. An ArF excimer laser (193 nm) was used in the present study to machine glasses such as soda-lime, Zerodur and BK-7. It is found that the melt ejection and debris deposition tend to pile up higher and become denser in structure under a higher energy density, repetition rate and shot number. There are thermal stress induced lateral cracks when the debris covered top layer is etched away. Higher fluence and repetition rate tend to generate more lateral and median cracks which propagate into the substrate. The changes of mechanical properties of the SSD layer were also investigated.

  20. Integration considerations for 130-nm device patterning using ArF lithography

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Levinson, Harry J.; Yang, Chih-Yuh; Pangrle, Suzette K.; Schefske, Jeff A.; Kent, Eric

    2000-07-01

    With the delivery of ful field ArF steppers and scanners to the leading edge IC manufacturers in 1999 for process development work, the industry is poised to implement ArF lithography in volume production in a few years from now. The introduction of ArF lithography in large volume deice manufacturing will be at the 130-nm technology node, with a k1-factor of roughly 0.4. This will represent the first time in the history of the semiconductor industry when the critical feature size of first generation devices for a given technology node is significantly smaller than the lithographic wavelength used in the patterning. Accordingly, there are a number of integration issues that must be resolved to ensure the successful implement of this technology. Such issues include antireflection coatings issues like reflectivity control and thickness, and the tradeoffs between using organic and inorganic ARCs; resist material issues like optical absorption, feature profile, CD uniformity and line edge roughness; and etch issues like resist loss, line edge roughening, endcap pullback, etc. For instance, one of the major problems with most currently available 193-nm resists is their high optical absorption at the exposure wavelength. This necessitates the use of significantly thinner 193-nm resist films than have been the case in earlier lithographic regimes, but etch considerations preclude this option as these materials do not have bey good etch stability. A balance between absorption and etch requirements must therefore be struck to ensure the successful implementation of this lithography. The above outlined integration issues involved in striking this balance are the subject of this paper, and they will be presented from a patterning perspective. Our exposures are made with ASML/900 full field scanner.

  1. Diffractive optical elements on non-flat substrates using electron beam lithography

    NASA Technical Reports Server (NTRS)

    Maker, Paul D. (Inventor); Muller, Richard E. (Inventor); Wilson, Daniel W. (Inventor)

    2002-01-01

    The present disclosure describes a technique for creating diffraction gratings on curved surfaces with electron beam lithography. The curved surface can act as an optical element to produce flat and aberration-free images in imaging spectrometers. In addition, the fabrication technique can modify the power structure of the grating orders so that there is more energy in the first order than for a typical grating. The inventors noticed that by using electron-beam lithography techniques, a variety of convex gratings that are well-suited to the requirements of imaging spectrometers can be manufactured.

  2. Indus-2 X-ray lithography beamline for X-ray optics and material science applications

    SciTech Connect

    Dhamgaye, V. P. Lodha, G. S.

    2014-04-24

    X-ray lithography is an ideal technique by which high aspect ratio and high spatial resolution micro/nano structures are fabricated using X-rays from synchrotron radiation source. The technique has been used for fabricating optics (X-ray, visible and infrared), sensors and actuators, fluidics and photonics. A beamline for X-ray lithography is operational on Indus-2. The beamline offers wide lithographic window from 1-40keV photon energy and wide beam for producing microstructures in polymers upto size ∼100mm × 100mm. X-ray exposures are possible in air, vacuum and He gas environment. The air based exposures enables the X-ray irradiation of resist for lithography and also irradiation of biological and liquid samples.

  3. Quantum atomic lithography via cross-cavity optical Stern-Gerlach setup

    NASA Astrophysics Data System (ADS)

    Máximo, C. E.; Batalhão, T. B.; Bachelard, R.; de Moraes Neto, G. D.; de Ponte, M. A.; Moussa, M. H. Y.

    2014-10-01

    We present a fully quantum scheme to perform 2D atomic lithography based on a cross-cavity optical Stern-Gerlach setup: an array of two mutually orthogonal cavities crossed by an atomic beam perpendicular to their optical axes, which is made to interact with two identical modes. After deriving an analytical solution for the atomic momentum distribution, we introduce a protocol allowing us to control the atomic deflection by manipulating the amplitudes and phases of the cavity field states.

  4. Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer.

    PubMed

    Jeong, Seok-Hwan; Shimura, Daisuke; Simoyama, Takasi; Seki, Miyoshi; Yokoyama, Nobuyuki; Ohtsuka, Minoru; Koshino, Keiji; Horikawa, Tsuyoshi; Tanaka, Yu; Morito, Ken

    2013-12-16

    We report superior spectral characteristics of silicon-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by 193-nm ArF-immersion lithography process on a 300-mm silicon-on-insulator wafer. We theoretically analyze spectral characteristics, considering random phase errors caused by micro fabrication process. It will be experimentally demonstrated that the fabricated devices exhibit a low excess loss of 0.4 ± 0.2 dB, a high out-of-band rejection ratio of >40dB, and a wide flatband width of ~2 nm. Furthermore, we evaluate manufacturing tolerances for intra-dies and inter-dies, comparing with the cases for 248-nm KrF-dry lithography process. It will be shown that the 193-nm ArF-immersion lithography process can provide much less excess phase errors of Si-nanowire waveguides, thus enabling to give better filter spectral characteristics. Finally, spectral superiorities will be reconfirmed by measuring 25 Gbps modulated signals launched into the fabricated device. Clear eye diagrams are observed when the wavelengths of modulated signals are stayed within almost passband of the 5th-order CROW.

  5. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    SciTech Connect

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  6. Mask topography effect in chromeless phase lithography

    NASA Astrophysics Data System (ADS)

    Philipsen, Vicky; Bekaert, Joost; Vandenberghe, Geert; Jonckheere, Rik; Van Den Broeke, Douglas; Socha, Robert

    2004-12-01

    Different types of phase-shift masks (PSM) in combination with the proper illumination condition are widely used to allow 193nm lithography to print ever-decreasing pitches with a sufficient process window. A viable option for the 65nm node is Chromeless Phase Lithography (CPL), which combines a chromeless phase shift mask and 193nm off-axis illumination. It has been demonstrated that CPL has a high flexibility for through pitch imaging. Also concerning mask making CPL masks showed advantages over alternating and attenuated PSM [1]. This paper discusses how the mask quality and its topography influence the imaging performance of CPL. It is shown that mask topography is an important factor for CPL, as the imaging relies also on the quartz depth differences in the mask. The wafer image is sensitive to phase variations induced by the quartz etch depth and the sidewall profile. Their impact is separately studied using rigorous 3D mask electro-magnetic field simulations (Sigma-C Solid-CM). Correlation of experimental results to simulation explains that the observed pitch-dependent tilt in the Bossung curves is mainly related to the 3D character of the mask. In search for a global compensation valid through pitch, the simulation study also evaluates the effect of other contributors such as lens aberrations in the optical system, assist features and half-toning Cr zebra lines in the design. However, as the tilt is inherent to the CPL mask fabrication, a compensation of the Bossung tilt effect can only be obtained for specific combinations of all sources, as will be shown. We concentrate on the imaging of 70nm lines and 100nm contact holes in pitches ranging from dense up to isolated. The wafers are exposed on an ASML PAS5500/1100 ArF scanner working with a 0.75NA projection lens and various types of off-axis illumination. The wafers are evaluated on a top-down CD SEM (KLA-Tencor 8250XR).

  7. High-n immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Cortie, Rogier; Meijers, Ralph; Evangelista, Fabrizio; Samarakone, Nandarisi

    2008-03-01

    A two-year study on the feasibility of High-n Immersion Lithography shows very promising results. This paper reports the findings of the study. The evaluation shows the tremendous progress made in the development of second-generation immersion fluid technology. Candidate fluids from several suppliers have been evaluated. All the commercial fluids evaluated are viable, so there are a number of options. Life tests have been conducted on bench top fluid-handling systems and the results referenced to full-scale systems. Parameters such as Dose per Laser Pulse, Pulse Rate, Fluid Flow Rate, and Fluid Absorbency at 193nm, and Oxygen/Air Contamination Levels were explored. A detailed evaluation of phenomena such as Last Lens Element (LLE) contamination has been conducted. Lens cleaning has been evaluated. A comparison of High-n fluid-based technology and water-based immersion technology shows interesting advantages of High-n fluid in the areas of Defect and Resist Interaction. Droplet Drying tests, Resist Staining evaluations, and Resist Contrast impact studies have all been run. Defect-generating mechanisms have been identified and are being eliminated. The lower evaporation rate of the High-n fluids compared with water shows the advantages of High-n Immersion. The core issue for the technology, the availability of High-n optical material for use as the final lens element, is updated. Samples of LuAG material have been received from development partners and have been evaluated. The latest status of optical materials and the technology timelines are reported. The potential impact of the availability of the technology is discussed. Synergy with technologies such as Double Patterning is discussed. The prospects for <22nm (hp) are evaluated.

  8. High throughput optical lithography by scanning a massive array of bowtie aperture antennas at near-field

    PubMed Central

    Wen, X.; Datta, A.; Traverso, L. M.; Pan, L.; Xu, X.; Moon, E. E.

    2015-01-01

    Optical lithography, the enabling process for defining features, has been widely used in semiconductor industry and many other nanotechnology applications. Advances of nanotechnology require developments of high-throughput optical lithography capabilities to overcome the optical diffraction limit and meet the ever-decreasing device dimensions. We report our recent experimental advancements to scale up diffraction unlimited optical lithography in a massive scale using the near field nanolithography capabilities of bowtie apertures. A record number of near-field optical elements, an array of 1,024 bowtie antenna apertures, are simultaneously employed to generate a large number of patterns by carefully controlling their working distances over the entire array using an optical gap metrology system. Our experimental results reiterated the ability of using massively-parallel near-field devices to achieve high-throughput optical nanolithography, which can be promising for many important nanotechnology applications such as computation, data storage, communication, and energy. PMID:26525906

  9. High throughput optical lithography by scanning a massive array of bowtie aperture antennas at near-field

    NASA Astrophysics Data System (ADS)

    Wen, X.; Datta, A.; Traverso, L. M.; Pan, L.; Xu, X.; Moon, E. E.

    2015-11-01

    Optical lithography, the enabling process for defining features, has been widely used in semiconductor industry and many other nanotechnology applications. Advances of nanotechnology require developments of high-throughput optical lithography capabilities to overcome the optical diffraction limit and meet the ever-decreasing device dimensions. We report our recent experimental advancements to scale up diffraction unlimited optical lithography in a massive scale using the near field nanolithography capabilities of bowtie apertures. A record number of near-field optical elements, an array of 1,024 bowtie antenna apertures, are simultaneously employed to generate a large number of patterns by carefully controlling their working distances over the entire array using an optical gap metrology system. Our experimental results reiterated the ability of using massively-parallel near-field devices to achieve high-throughput optical nanolithography, which can be promising for many important nanotechnology applications such as computation, data storage, communication, and energy.

  10. High throughput optical lithography by scanning a massive array of bowtie aperture antennas at near-field.

    PubMed

    Wen, X; Datta, A; Traverso, L M; Pan, L; Xu, X; Moon, E E

    2015-11-03

    Optical lithography, the enabling process for defining features, has been widely used in semiconductor industry and many other nanotechnology applications. Advances of nanotechnology require developments of high-throughput optical lithography capabilities to overcome the optical diffraction limit and meet the ever-decreasing device dimensions. We report our recent experimental advancements to scale up diffraction unlimited optical lithography in a massive scale using the near field nanolithography capabilities of bowtie apertures. A record number of near-field optical elements, an array of 1,024 bowtie antenna apertures, are simultaneously employed to generate a large number of patterns by carefully controlling their working distances over the entire array using an optical gap metrology system. Our experimental results reiterated the ability of using massively-parallel near-field devices to achieve high-throughput optical nanolithography, which can be promising for many important nanotechnology applications such as computation, data storage, communication, and energy.

  11. 1x stencil masks fabrication and their use in Low-Energy Electron-beam Proximity Lithography (LEEPL)

    NASA Astrophysics Data System (ADS)

    Behringer, Uwe F. W.

    2004-12-01

    Thirty years ago it was the common believe of most of the lithographer that the limit end for the optical lithography will be at about 1 μm ground rule. So NGL tools were developed to go in the 500nm and 250nm regions. 15 years later the different optical lithography techniques were still alive exposing feature sizes down to 200nm and the NGL tool developer had to move to 100nm and below. Today 100nm features made by optical lithography is world wide a common technique in most of the modern chip manufacturing plants, and feature sizes beyond the used wavelength are state of art. So do we really need NGL or will the optical lithography lives forever? Well, there are already optical system available or will be soon delivered to the manufacturing lines which are able to expose feature sizes down to 70nm and even to 50nm if they use 193nm immersion lithography. But for what price? The optical lithography became extremely expensive. Reticles for the 70nm technology full with OPC structures may cost up to 500 K and an optical reticle set up to 2 Million. So in my understanding the introduction of any NGL technique will only happen if such a technique can demonstrate at least the same performance as the optical lithography but at a lower cost level. The best understood NGLs are the electron beam lithography techniques used in e-beam direct writing tools for the exposure of masks and reticles or e-beam techniques which expose the wafers using masks like E-beam Projection Lithography (EPL) or Low Energy E-beam Proximity Lithography (LEEPL) respectively. Both EPL and LEEPL require a similar mask technique so called stencil masks. The first 1x stencil masks (a silicon wafer with a thin membrane area containing the pattern as physical holes) were developed by IBM Germany more than 25 years ago and perfected in the Advanced Mask Facility (AMF) at IBM Vermont. Today, these 1x stencil masks used for LEEPL are mainly produced by Hoya, DNP, Toppan and NTT-AT in Japan. This paper

  12. Elevating optical activity: Efficient on-edge lithography of three-dimensional starfish metamaterial

    NASA Astrophysics Data System (ADS)

    Dietrich, K.; Menzel, C.; Lehr, D.; Puffky, O.; Hübner, U.; Pertsch, T.; Tünnermann, A.; Kley, E.-B.

    2014-05-01

    We present an approach for extremely fast, wafer-scale fabrication of chiral starfish metamaterials based on electron beam- and on-edge lithography. A millimeter sized array of both the planar chiral and the true 3D chiral starfish is realized, and their chiroptical performances are compared by circular dichroism measurements. We find optical activity in the visible and near-infrared spectral range, where the 3D starfish clearly outperforms the planar design by almost 2 orders of magnitude, though fabrication efforts are only moderately increased. The presented approach is capable of bridging the gap between high performance optical chiral metamaterials and industrial production by nanoimprint technology.

  13. Elevating optical activity: Efficient on-edge lithography of three-dimensional starfish metamaterial

    SciTech Connect

    Dietrich, K. Menzel, C.; Lehr, D.; Puffky, O.; Pertsch, T.; Tünnermann, A.; Kley, E.-B.; Hübner, U.

    2014-05-12

    We present an approach for extremely fast, wafer-scale fabrication of chiral starfish metamaterials based on electron beam- and on-edge lithography. A millimeter sized array of both the planar chiral and the true 3D chiral starfish is realized, and their chiroptical performances are compared by circular dichroism measurements. We find optical activity in the visible and near-infrared spectral range, where the 3D starfish clearly outperforms the planar design by almost 2 orders of magnitude, though fabrication efforts are only moderately increased. The presented approach is capable of bridging the gap between high performance optical chiral metamaterials and industrial production by nanoimprint technology.

  14. Advanced mask inspection optical system (AMOS) using 198.5-nm wavelength for 65-nm (hp) node and beyond: system development and initial state D/D inspection performance

    NASA Astrophysics Data System (ADS)

    Tojo, Toru; Hirano, Ryoich; Tsuchiya, Hideo; Oaki, Junji; Nishizaka, Takeshi; Sanada, Yasushi; Matsuki, Kazuto; Isomura, Ikunao; Ogawa, Riki; Kobayashi, Noboru; Nakashima, Kazuhiro; Sugihara, Shinji; Inoue, Hiromu; Imai, Shinichi; Suzuki, Hitoshi; Sekine, Akihiko; Taya, Makoto; Miwa, Akemi; Yoshioka, Nobuyuki; Ohira, Katsumi; Chung, Dong-Hoon; Otaki, Masao

    2004-12-01

    A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical system and its performance are reported. The system is operated at wavelength of 198.5nm, which wavelength is nearly equal to 193nm-ArF laser exposure tool. Some defect image data and defect inspection sensitivity due to simulation-base die-to-die (D/D) inspection are shown on standard programmed defect test mask. As an initial state D/D inspection performance, 20-60 nm defects are certified. System capabilities for 65nm node inspection and beyond are also discussed.

  15. Characterization of optical material parameters for EUV Lithography applications at PTB

    NASA Astrophysics Data System (ADS)

    Laubis, Christian; Haase, Anton; Soltwisch, Victor; Scholze, Frank

    2015-09-01

    EUV Lithography now reaches the fab floor. The technology ramp up and integration with existing processes will require evolutionary steps in many aspects of the technology. For instance will it be necessary to reduce 3D mask effects like shadowing e.g. by introducing a thinner absorber structure. Continuous progress will be based on using new materials, adapted multilayers, and new reticle designs. Many of these developments are based on simulations and computer models for the design of the required structures and thus require data on the optical properties of the materials involved. In particular when addressing the reticle where the optical function is the target value. Using its more than 25 years of expertise in EUV metrology1, PTB operates instrumentation for reflectometry and scatterometry2 in the EUV and adjacent wavelength ranges and can provide the data for the determination of optical material parameters for individual thin layers. The need for sound optical parameter characterization for the development of alternative EUV materials was thoroughly motivated during the 2015 SPIE Advanced Lithography conference3. The data required is not readily available from databases, as thin film properties - depending on their deposition method and interfaces - may deviate significantly from standard bulk data4. Therefore, better optical constants and a continuous availability of the associated measurement tools are vital for further progress in EUV reticle and optical system design. The ability to vary relevant parameters like wavelength, angle of incidence (AOI), the plane of incidence and polarization is a prerequisite to gather sufficient data to model optical constants. We give details on PTB's measurement capabilities and accessible parameter space for optical material parameter characterization and show some representative data and results.

  16. Surface reconstruction from microscopic images in optical lithography.

    PubMed

    Estellers, Virginia; Thiran, Jean-Philippe; Gabrani, Maria

    2014-08-01

    This paper presents a method to reconstruct 3D surfaces of silicon wafers from 2D images of printed circuits taken with a scanning electron microscope. Our reconstruction method combines the physical model of the optical acquisition system with prior knowledge about the shapes of the patterns in the circuit; the result is a shape-from-shading technique with a shape prior. The reconstruction of the surface is formulated as an optimization problem with an objective functional that combines a data-fidelity term on the microscopic image with two prior terms on the surface. The data term models the acquisition system through the irradiance equation characteristic of the microscope; the first prior is a smoothness penalty on the reconstructed surface, and the second prior constrains the shape of the surface to agree with the expected shape of the pattern in the circuit. In order to account for the variability of the manufacturing process, this second prior includes a deformation field that allows a nonlinear elastic deformation between the expected pattern and the reconstructed surface. As a result, the minimization problem has two unknowns, and the reconstruction method provides two outputs: 1) a reconstructed surface and 2) a deformation field. The reconstructed surface is derived from the shading observed in the image and the prior knowledge about the pattern in the circuit, while the deformation field produces a mapping between the expected shape and the reconstructed surface that provides a measure of deviation between the circuit design models and the real manufacturing process.

  17. Fabrication of two-dimensional micro patterns for adaptive optics by using laser interference lithography

    NASA Astrophysics Data System (ADS)

    Li, Xinghui; Cai, Yindi; Aihara, Ryo; Shimizu, Yuki; Ito, So; Gao, Wei

    2015-07-01

    This paper presents a fabrication method of two-dimensional micro patterns for adaptive optics with a micrometric or sub-micrometric period to be used for fabrication of micro lens array or two-dimensional diffraction gratings. A multibeam two-axis Lloyd's mirror interferometer is employed to carry out laser interference lithography for the fabrication of two-dimensional grating structures. In the proposed instrument, the optical setup consists of a light source providing a laser beam, a multi-beam generator, two plane mirrors to generate a two-dimensional XY interference pattern and a substrate on which the XY interference pattern is to be exposed. In this paper, pattern exposure tests are carried out by the developed optical configuration optimized by computer simulations. Some experimental results of the XY pattern fabrication will be reported.

  18. Trace element analysis of synthetic mono- and poly-crystalline CaF 2 by ultraviolet laser ablation inductively coupled plasma mass spectrometry at 266 and 193 nm

    NASA Astrophysics Data System (ADS)

    Koch, J.; Feldmann, I.; Hattendorf, B.; Günther, D.; Engel, U.; Jakubowski, N.; Bolshov, M.; Niemax, K.; Hergenröder, R.

    2002-06-01

    The analytical figures of merit for ultraviolet laser ablation-inductively coupled plasma mass spectrometry (UV-LA-ICP-MS) at 266 nm with respect to the trace element analysis of high-purity, UV-transmitting alkaline earth halides are investigated and discussed. Ablation threshold energy density values and ablation rates for mono- and poly-crystalline CaF 2 samples were determined. Furthermore, Pb-, Rb-, Sr-, Ba- and Yb-specific analysis was performed. For these purposes, a pulsed Nd:YAG laser operated at the fourth harmonic of the fundamental wavelength (λ=266 nm) and a double-focusing sector field ICP-MS detector were employed. Depending on the background noise and isotope-specific sensitivity, the detection limits typically varied from 0.7 ng/g for Sr to 7 ng/g in the case of Pb. The concentrations were determined using a glass standard reference material (SRM NIST612). In order to demonstrate the sensitivity of the arrangement described, comparative measurements by means of a commercial ablation system consisting of an ArF excimer laser (λ=193 nm) and a quadrupole-type ICP-MS (ICP-QMS) instrument were carried out. The accuracy of both analyses was in good agreement, whereas ablation at 266 nm and detection using sector-field ICP-MS led to a sensitivity that was one order of magnitude above that obtained at 193 nm with ICP-QMS.

  19. Application of nanoimprint lithography to nano-optics: wire grid polarizer and photonic crystal LED

    NASA Astrophysics Data System (ADS)

    Lee, Ki-Dong; Kim, Sang-Hoon; Park, Joo-Do; Kim, Ja-Yeon; Park, Seong-Ju

    2007-02-01

    Two optical devices with nano-scale subwavelength structures have been fabricated by using nanoimprint lithography (NIL). (1) Wire grid polarizer (WGP) is one of key optical components for projection displays with liquid crystal micro-display. Although WGP with 140 nm pitch is commercially available now, it still poses a problem with low extinction ratio (ER) for blue color. Since the ER can be increased by reducing the pitch, fabrication of a WGP with 100 nm pitch was attempted by NIL. We successfully developed thermal nanoimprint and aluminum dry etching processes. Fabricated WGPs showed twice higher ER than 140 nm pitch one. (2) Photonic crystal (PC) structures on LED have been known to enhance the light extraction significantly. Although e-beam lithography has been used for the proof of principle, it is far from real production method. We applied thermal NIL to fabricate PC structures in p-GaN layer of green LED. To identify the PC effect, two structures were fabricated and compared. One structure makes the green light of 525 nm wavelength fall within the photonic band gap (PBG) while the other puts it outside of PBG. The former structure showed 9-fold increment of photoluminescence compared to LED without PC structures, while the latter showed only 6-fold increment

  20. Reduction of image optics dependence of resist image performance for high NA extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Chun, Ouyang; Li, Yanqiu; Liu, Lihui

    2013-12-01

    High Numerical Aperture (NA) extreme ultraviolet lithography (EUVL) with different reduction is one option for 16 nm node and below. In our work, as NA increases to about 0.45, we discuss the impacts of reduction ratio of 5 or 6 on resist image performance such as Horizontal-Vertical (H-V) critical dimension (CD) bias for various incident angles and CD Uniformity induced by mask CD errors at wafer level. Commercial software PROLITH ™ and in-house program are adopted in simulation referred above. In conclusion, resist image performance can be improved with the increase of reduction ratio. H-V CD Bias with reduction ratio of 6 is obviously smaller than that with reduction ratio of 5 at maximum incident angle. Additionally, CD Uniformity (nm, 3 sigma) induced by mask CD errors for 5× optics system is larger, which means image quality is worse at 5× optics system.

  1. Convolution-variation separation method for efficient modeling of optical lithography.

    PubMed

    Liu, Shiyuan; Zhou, Xinjiang; Lv, Wen; Xu, Shuang; Wei, Haiqing

    2013-07-01

    We propose a general method called convolution-variation separation (CVS) to enable efficient optical imaging calculations without sacrificing accuracy when simulating images for a wide range of process variations. The CVS method is derived from first principles using a series expansion, which consists of a set of predetermined basis functions weighted by a set of predetermined expansion coefficients. The basis functions are independent of the process variations and thus may be computed and stored in advance, while the expansion coefficients depend only on the process variations. Optical image simulations for defocus and aberration variations with applications in robust inverse lithography technology and lens aberration metrology have demonstrated the main concept of the CVS method.

  2. Advances in maskless and mask-based optical lithography on plastic flexible substrates

    NASA Astrophysics Data System (ADS)

    Barbu, Ionut; Ivan, Marius G.; Giesen, Peter; Van de Moosdijk, Michel; Meinders, Erwin R.

    2009-12-01

    Organic flexible electronics is an emerging technology with huge potential growth in the future which is likely to open up a complete new series of potential applications such as flexible OLED-based displays, urban commercial signage, and flexible electronic paper. The transistor is the fundamental building block of all these applications. A key challenge in patterning transistors on flexible plastic substrates stems from the in-plane nonlinear deformations as a consequence of foil expansion/shrinkage, moisture uptake, baking etc. during various processing steps. Optical maskless lithography is one of the potential candidates for compensating for these foil distortions by in-situ adjustment prior to exposure of the new layer image with respect to the already patterned layers. Maskless lithography also brings the added value of reducing the cost-of-ownership related to traditional mask-based tools by eliminating the need for expensive masks. For the purpose of this paper, single-layer maskless exposures at 355 nm were performed on gold-coated poly(ethylenenaphthalate) (PEN) flexible substrates temporarily attached to rigid carriers to ensure dimensional stability during processing. Two positive photoresists were employed for this study and the results on plastic foils were benchmarked against maskless as well as mask-based (ASML PAS 5500/100D stepper) exposures on silicon wafers.

  3. Optical Transcutaneous pCO2 Sensor using Soft Lithography Method for Arterial Blood Gas Analysis

    NASA Astrophysics Data System (ADS)

    Kang, Byoung-Ho; Kim, Do-Eok; Leem, Myoung-Kun; Kwon, Dae-Hyuk; Lee, Kwang-Man; Kang, Shin-Won

    2008-10-01

    In this study, we carried out development of non-invasive optical transcutaneous partial pressure of carbon dioxide, pCO2, monitoring system. The purpose of this system is to detect CO2 from outer skin, not from the arterial blood-gathering method. There are advantages about a reduction of analysis time and real-time monitoring that this system might be available. The measurement system is composed of the IR lamp, the pyroelectric sensor including a 4.26 μm optical filter, the optical gas reaction chamber and the signal processing circuit. The optical reaction length of chamber was reduced by 1 mm using the soft-lithography method which CO2 is exhausted in human body as we considered. The fabricated pCO2 monitoring system showed linear result of 6.50×10-6 absorbance/ppm sensitivity for CO2 concentration from 0 ˜5,000 ppm by MFC and about 2 seconds of fast response time. The proposed system can be used in the optical biosensor field for the medical diagnosis such as pCO2 monitoring system and environment monitoring systems.

  4. Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

    NASA Astrophysics Data System (ADS)

    Nagarajan, Rao M.; Rask, Steven D.

    1988-06-01

    A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron

  5. Dynamics of N-OH bond dissociation in cyclopentanone and cyclohexanone oxime at 193 nm: laser-induced fluorescence detection of nascent OH (v'', J'').

    PubMed

    Kawade, Monali N; Saha, Ankur; Upadhyaya, Hari P; Kumar, Awadhesh; Naik, Prakash D

    2010-12-01

    Cyclohexanone oxime (CHO) and cyclopentanone oxime (CPO) in the vapor phase undergo N-OH bond scission upon excitation at 193 nm to produce OH, which was detected state selectively employing laser-induced fluorescence. The measured energy distribution between fragments for both oximes suggests that in CHO the OH produced is mostly vibrationally cold, with moderate rotational excitation, whereas in CPO the OH fragment is also formed in v'' = 1 (~2%). The rotational population of OH (v'' = 0, J'') from CHO is characterized by a rotational temperature of 1440 ± 80 K, whereas the rotational populations of OH (v'' = 0, J'') and OH (v'' = 1, J'') from CPO are characterized by temperatures of 1360 ± 90 K and 930 ± 170 K, respectively. A high fraction of the available energy is partitioned to the relative translation of the fragments with f(T) values of 0.25 and 0.22 for CHO and CPO, respectively. In the case of CHO, the Λ-doublet states of the nascent OH radical are populated almost equally in lower rotational quantum levels N'', with a preference for Π(+) (A') states for higher N''. However, there is no preference for either of the two spin orbit states Π(3/2) and Π(1/2) of OH. The nascent OH product in CPO is equally distributed in both Λ-doublet states of Π(+) (A') and Π(-) (A'') for all N'', but has a preference for the Π(3/2) spin orbit state. Experimental work in combination with theoretical calculations suggests that both CHO and CPO molecules at 193 nm are excited to the S(2) state, which undergoes nonradiative relaxation to the T(2) state. Subsequently, molecules undergo the N-OH bond dissociation from the T(2) state with an exit barrier to produce OH (v'', J'').

  6. New electron optical column with large field for nanometer e-beam lithography system

    NASA Astrophysics Data System (ADS)

    Ohta, Hiroya; Matsuzaka, Takashi; Saitou, Norio

    1995-05-01

    An electron beam lithography system for nanometer devices has been developed. The target specifications of the system are a Gaussian beam diameter of 10 nm and a beam current of 1 nA, an acceleration voltage of 50 kV, a 500 micrometers X 500 micrometers deflection field and an overlay accuracy of 10 nm (3(sigma) ). To realize such high performance, the following two technologies have been developed for the design of the electron optical column: (1) a low aberration objective lens system with a one stage electrostatic deflector and (2) a thermal field emission (TFE) gun system with a low energy spread and a high brightness Zr/O/W cathode. The exposed results shown are a 30 nm isolated line and a 40 nm lines and spaces. An overlay accuracy of 10 nm are also obtained. This system is capable of being put into practical use in the fabrication of nanometer devices.

  7. Utilizing laser interference lithography to fabricate hierarchical optical active nanostructures inspired by the blue Morpho butterfly

    NASA Astrophysics Data System (ADS)

    Siddique, Radwanul H.; Faisal, Abrar; Hünig, Ruben; Bartels, Carolin; Wacker, Irene; Lemmer, Uli; Hoelscher, Hendrik

    2014-09-01

    The famous non-iridescent blue of the Morpho butter by is caused by a `Christmas tree' like nanostructure which is a challenge for common fabrication techniques. Here, we introduce a method to fabricate this complex morphology utilizing dual beam interference lithography. We add a reflective coating below the photoresist to create a second interference pattern in vertical direction by exploiting the back reflection from the substrate. This vertical pattern exposes the lamella structure into the photosensitive polymer while the horizontal interference pattern determines the distance of the ridges. The photosensitive polymer is chosen accordingly to create the Christmas tree' like tapered shape. The resulting artificial Morpho replica shows brilliant non-iridescent blue up to an incident angle of 40. Its optical properties are close to the original Morpho structure because the refractive index of the polymer is close to chitin. Moreover, the biomimetic surface is water repellent with a contact angle of 110.

  8. Infrared Frequency Selective Surfaces Fabricated using Optical Lithography and Phase-Shift Masks

    SciTech Connect

    S.J. Spector; D.K. Astolfi; S.P. Doran; T.M. Lyszczarz; J.E. Raynolds

    2001-06-15

    A frequency selective surface (FSS) structure has been fabricated for use in a thermophotovoltaic system. The FSS provides a means for reflecting the unusable light below the bandgap of the thermophotovoltaic cell while transmitting the usable light above the bandgap. This behavior is relatively independent of the light's incident angle. The fabrication of the FSS was done using optical lithography and a phase-shift mask. The FSS cell consisted of circular slits spaced by 1100 nm. The diameters and widths of the circular slits were 870 nm and 120 nm, respectively. The FSS was predicted to pass wavelengths near 7 {micro}m and reflect wavelengths outside of this pass-band. The FSSs fabricated performed as expected with a pass-band centered near 5 {micro}m.

  9. Multi-mirror adaptive optics for control of thermally induced aberrations in extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Habets, Michel; Scholten, Joni; Weiland, Siep; Coene, Wim

    2016-03-01

    The imaging quality of the projection optics of an extreme ultraviolet lithography scanner degrades under the influence of thermally induced deformations of its mirrors. Wavefronts of different reticle points encounter different parts of the deformed mirrors, resulting in a field dependent wavefront error. This paper presents how ideas from multi-conjugate adaptive optics can be used to reduce these thermally induced aberrations. To this end a generic deformable mirror model is implemented. Linear actuator sensitivities are derived directly, based on nominal ray locations and directions, enabling fast prototyping. An integrated opto-thermo-mechanical mirror heating model is used to determine the evolution of thermally induced abberations over time. This transient simulation is used to analyze four different adaptive optics configurations and two different control algorithms. It is shown that by employing the multi-objective goal-attainment method, it is possible to improve the optical performance significantly when compared to minimizing the l2-norm of the total residual wavefront error vector.

  10. A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography

    NASA Astrophysics Data System (ADS)

    Majumder, Apratim; Helms, Phillip L.; Andrew, Trisha L.; Menon, Rajesh

    2016-03-01

    Optical lithography is the most prevalent method of fabricating micro-and nano-scale structures in the semiconductor industry due to the fact that patterning using photons is fast, accurate and provides high throughput. However, the resolution of this technique is inherently limited by the physical phenomenon of diffraction. Absorbance-Modulation-Optical Lithography (AMOL), a recently developed technique has been successfully demonstrated to be able to circumvent this diffraction limit. AMOL employs a dual-wavelength exposure system in conjunction with spectrally selective reversible photo-transitions in thin films of photochromic molecules to achieve patterning of features with sizes beyond the far-field diffraction limit. We have developed a finite-element-method based full-electromagnetic-wave solution model that simulates the photo-chemical processes that occur within the thin film of the photochromic molecules under illumination by the exposure and confining wavelengths in AMOL. This model allows us to understand how the material characteristics influence the confinement to sub-diffraction dimensions, of the transmitted point spread function (PSF) of the exposure wavelength inside the recording medium. The model reported here provides the most comprehensive analysis of the AMOL process to-date, and the results show that the most important factors that govern the process, are the polarization of the two beams, the ratio of the intensities of the two wavelengths, the relative absorption coefficients and the concentration of the photochromic species, the thickness of the photochromic layer and the quantum yields of the photoreactions at the two wavelengths. The aim of this work is to elucidate the requirements of AMOL in successfully circumventing the far-field diffraction limit.

  11. E-beam lithography and optical near-field lithography: new prospects in fabrication of various grating structures

    NASA Astrophysics Data System (ADS)

    Kley, Ernst-Bernhard; Clausnitzer, Tina

    2003-12-01

    Today"s technologies available for the fabrication of micro structured optical elements are well developed for defined classes of structures. Techniques for very complex optical functions or for combinations of optical functions together with others are more or less in the level of research or labs. A promising approach for complex grating fabrication is the use of optical near field holography (NFH) and e-beam writing for unification of the advantages. The paper wants to show the potential of both techniques itself as well as the potential that arises from their teamwork. The paper demonstrates one and two dimensional gratings, chirped and unidirectional gratings fabricated by NFH using e-beam written masks. It shows also possibilities for the fabrication of gratings on binary, multilevel and continuous optical profiles.

  12. Coaxial Lithography

    NASA Astrophysics Data System (ADS)

    Ozel, Tuncay

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowires that can be realized and studied in the laboratory. This thesis focuses on bridging templated electrochemical synthesis and lithography for expanding current synthetic capabilities with respect to materials generality and the ability to tailor two-dimensional growth in the formation of core-shell structures for the rational design and preparation of nanowires with very complex architectures that cannot be made by any other techniques. Chapter 1 introduces plasmonics, templated electrochemical synthesis, and on-wire lithography concepts and their significances within chemistry and materials science. Chapter 2 details a powerful technique for the deposition of metals and semiconductors with nanometer resolution in segment and gap lengths using on-wire lithography, which serves as a new platform to explore plasmon-exciton interactions in the form of long-range optical nanoscale rulers. Chapter 3 highlights an approach for the electrochemical synthesis of solution dispersible core-shell polymeric and inorganic semiconductor nanowires with metallic leads. A photodetector based on a single core-shell semiconductor nanowire is presented to demonstrate the functionality of the nanowires produced using this approach. Chapter 4 describes a new materials general technique, termed coaxial lithography (COAL), bridging templated electrochemical synthesis and lithography for generating coaxial nanowires in a parallel fashion with sub-10 nanometer resolution in both axial and radial dimensions. Combinations of coaxial nanowires composed of metals, metal oxides, metal chalcogenides, conjugated polymers, and a core/shell semiconductor nanowire with an embedded plasmonic nanoring are presented to

  13. Electron stimulated desorption of the metallic substrate at monolayer coverage: Sensitive detection via 193 nm laser photoionization of neutral aluminum desorbed from CH3O/Al(111)

    NASA Astrophysics Data System (ADS)

    Young, C. E.; Whitten, J. E.; Pellin, M. J.; Gruen, D. M.; Jones, P. L.

    A fortuitous overlap between the gain profile of the 193 nm ArF excimer laser and the Al autoionizing transition (sup 2)S(sub 1/2) (512753/cm) yields to the left (sup 2)P(sup 0)J has been exploited in the direct observation of substrate metal atoms in an electron simulated desorption (ESD) process from the monolayer adsorbate system CH3O/Al(111). The identity of the mass 27 photoion was established as Al(+) by (1) isotopic substitution of C-13 in the methanol employed for methoxy formation, and (2) tunable laser scans utilizing the DJ-2 (J = 3/2, 5/2) intermediate levels at approximately 32436/cm and a 248 nm ionization step. An ESD yield of approximately x 10(exp -6) Al atoms/(electron at 1 keV) was established by comparison with a sputtering experiment in the same apparatus. Velocity distributions measured for the desorbed Al species showed some differences in comparison with methoxy velocity data: a slightly lower peak velocity and a significantly less prominent high-velocity component.

  14. Advanced Mask Aligner Lithography (AMALITH)

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna

    2015-03-01

    Mask aligner lithography is very attractive for less-critical lithography layers and is widely used for LED, display, CMOS image sensor, micro-fluidics and MEMS manufacturing. Mask aligner lithography is also a preferred choice the semiconductor back-end for 3D-IC, TSV interconnects, advanced packaging (AdP) and wafer-level-packaging (WLP). Mask aligner lithography is a mature technique based on shadow printing and has not much changed since the 1980s. In shadow printing lithography a geometric pattern is transferred by free-space propagation from a photomask to a photosensitive layer on a wafer. The inherent simplicity of the pattern transfer offers ease of operation, low maintenance, moderate capital expenditure, high wafers-per-hour (WPH) throughput, and attractive cost-of-ownership (COO). Advanced mask aligner lithography (AMALITH) comprises different measures to improve shadow printing lithography beyond current limits. The key enabling technology for AMALITH is a novel light integrator systems, referred to as MO Exposure Optics® (MOEO). MOEO allows to fully control and shape the properties of the illumination light in a mask aligner. Full control is the base for accurate simulation and optimization of the shadow printing process (computational lithography). Now photolithography enhancement techniques like customized illumination, optical proximity correction (OPC), phase masks (AAPSM), half-tone lithography and Talbot lithography could be used in mask aligner lithography. We summarize the recent progress in advanced mask aligner lithography (AMALITH) and discuss possible measures to further improve shadow printing lithography.

  15. Excimer laser ablation lithography applied to the fabrication of reflective diffractive optics

    NASA Astrophysics Data System (ADS)

    Flury, M.; Benatmane, A.; Gérard, P.; Montgomery, P. C.; Fontaine, J.; Engel, T.; Schunck, J. P.; Fogarassy, E.

    2003-03-01

    We propose a low cost technique for the production of diffractive optical elements (DOE). These elements are devoted to high power lasers beam shaping in the mid-infrared wavelengths. This process called laser ablation lithography (LAL), may seem similar to laser beam writing (LBW) in the way the whole DOE's design is reproduced pixel by pixel on the substrate placed on a computer controlled XY translation stage. A first difference is that the photoresist is not exposed with UV light but is directly ablated with short excimer laser pulses. Furthermore, with LAL technique the size of the smallest pixel ( 5 μm×5 μm) is more than 10 times greater than those produced by LBW. We discuss in details the experimental set-up for LAL and demonstrate that it gives a resolution up to 10 times greater than photolithography with flexible masks. This makes LAL a promising solution for the production of DOE for use with Nd:YAG lasers. New applications of DOEs are finally introduced with high power lasers sources, such as laser marking or multi-point brazing.

  16. Physical Limitations in Lithography for Microelectronics.

    ERIC Educational Resources Information Center

    Flavin, P. G.

    1981-01-01

    Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

  17. Multilayer Optics for an Extreme Ultraviolet Lithography Tool with 70 nm Resolution

    SciTech Connect

    Soufli, R; Spiller, E; Schmidt, M A; Davidson, J C; Brabner, R F; Bullikson, E M; Kaufmann, B B; Baker, S L; Chapman, H N; Hudyma, R M; Taylor, J S; Walton, C C; Montcalm, C; Folta, J A

    2001-05-04

    One of the most critical tasks in the development of extreme ultraviolet lithography (EUVL) is the accurate deposition of reflective multilayer coatings for the mirrors comprising the EUVL tool. The second set (Set 2) of four imaging optics for an alpha-class EUVL system has been coated successfully. All four mirrors (M1, M2, M3, M4) were Mo/Si-coated during a single deposition run with a production-scale DC-magnetron sputtering system. Ideally, the multilayer coatings should not degrade the residual wavefront error of the imaging system design. For the present EUVL camera, this requirement is equivalent to depositing multilayer coatings that would add a figure error of less than 0.11 nm rms. In addition, all mirrors should be matched in centroid wavelength, in order to insure maximum throughput of the EUVL tool. In order to meet these constraints, the multilayer deposition process needs to be controlled to atomic precision. EUV measurements of the coated mirrors determined that the added figure errors due to the multilayer coatings are 0.032 nm rms (M1), 0.037 nm rms (M2), 0.040 nm rms (M3) and 0.015 nm rms (M4), well within the aforementioned requirement of 0.11 nm rms. The average wavelength among the four projection mirrors is 13.352 nm, with an optic-to-optic matching of 1{sigma}=0.010 nm. This outstanding level of wavelength matching produces 99.3% of the throughput of an ideally matched four-mirror system. Peak reflectances are 63.8% (M1), 65.2% (M2), 63.8% (M3) and 66.7% (M4). The variation in reflectance values between the four optics is consistent with their high frequency substrate roughness. It is predicted that the multilayer coatings will not introduce any aberrations in the lithographic system performance, for both static and scanned images of 70 nm-dense features.

  18. Fabrication of a deoxyribonucleic acid polymer ridge waveguide electro-optic modulator by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Fehrman Cory, Emily Marie

    The purpose of this dissertation is to develop the nanoimprint lithography (NIL) technique for direct patterning of the deoxyribonucleic acid biopolymer DNA-CTMA. The Mach Zehnder modulator was chosen as the test device to demonstrate the NIL patterning technique for DNA-CTMA as well as the unique optical and electrical properties of the DNA-CTMA as a cladding material for poled electro-optic polymers. Towards this goal, a DNA-CTMA clad inverted ridge waveguide is demonstrated at 633 nm and 1550 nm, the structure of which is patterned directly in the DNA-CTMA cladding by NIL. Additionally, EO modulation is demonstrated in a slab waveguide structure with DNA-CTMA cladding and SEO110 EO polymer core. Marine-derived deoxyribonucleic acid biopolymer (DNA-CTMA) is a green, nontoxic, low cost optical polymer material derived from waste products of the salmon fishing industry. It exhibits low optical loss at 1550 nm, forms a thin flexible film, is compatible with existing poled polymer technologies, increases the poling efficiency when used as a low resistivity cladding layer, and is thermally stable to 200 oC. Due to chemical incompatibility with the photoresists and the associated solvents, NIL has been developed for patterning the DNA biopolymer cladding to form an inverted ridge waveguide for the basis of the Mach Zehnder modulator. While DNA-CTMA presents significant advantages over other commonly used cladding materials for the 1550 nm wavelength range, one of the commonly used bands for optical communications, the mechanical properties and environmental susceptibility of the material poses significant fabrication challenges. A study of the effects of optical and mechanical effects of environmental humidity exposure are presented for the DNA-CTMA and SEO110 polymers used in the inverted ridge waveguide. While the soft, flexible nature of the DNA-CTMA is desirable for certain applications, this presents a challenge in producing a clean polished window for optical

  19. EUV lithography imaging using novel pellicle membranes

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan; Vanpaemel, Johannes; Lee, Jae Uk; Adelmann, Christoph; Zahedmanesh, Houman; Huyghebaert, Cedric; Gallagher, Emily E.

    2016-03-01

    EUV mask protection against defects during use remains a challenge for EUV lithography. A stand-off protective membrane - a pellicle - is targeted to prevent yield losses in high volume manufacturing during handling and exposure, just as it is for 193nm lithography. The pellicle is thin enough to transmit EUV exposure light, yet strong enough to remain intact and hold any particles out of focus during exposure. The development of pellicles for EUV is much more challenging than for 193nm lithography for multiple reasons including: high absorption of most materials at EUV wavelength, pump-down sequences in the EUV vacuum system, and exposure to high intensity EUV light. To solve the problems of transmission and film durability, various options have been explored. In most cases a thin core film is considered, since the deposition process for this is well established and because it is the simplest option. The transmission specification typically dictates that membranes are very thin (~50nm or less), which makes both fabrication and film mechanical integrity difficult. As an alternative, low density films (e.g. including porosity) will allow thicker membranes for a given transmission specification, which is likely to improve film durability. The risk is that the porosity could influence the imaging. At imec, two cases of pellicle concepts based on reducing density have been assessed : (1) 3D-patterned SiN by directed self-assembly (DSA), and (2) carbon nanomaterials such as carbon nanotubes (CNT) and carbon nanosheets (CNS). The first case is based on SiN membranes that are 3D-patterned by Directed Self Assembly (DSA). The materials are tested relative to the primary specifications: EUV transmission and film durability. A risk assessment of printing performance is provided based on simulations of scattered energy. General conclusions on the efficacy of various approaches will provided.

  20. Extreme ultraviolet lithography and three dimensional integrated circuit—A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay

    2014-03-01

    Extreme ultraviolet lithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology. Commercial step-and-scan tools for preproduction are installed now with full field capability; however, EUV source power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 200 W in-band power at IF, current tools can supply only approximately 40-55 W. EUVL resist has improved significantly in the last few years, with 13 nm line/space half-pitch resolution being produced with approximately 3-4 nm line width roughness (LWR), but LWR needs 2× improvement. Creating a defect-free EUVL mask is currently an obstacle. Actual adoption of EUVL for 22 nm and beyond technology nodes will depend on the extension of current optical lithography (193 nm immersion lithography, combined with multiple patterning techniques), as well as other methods such as 3D IC. Lithography has been the enabler for IC performance improvement by increasing device density, clock rate, and transistor rate. However, after the turn of the century, IC scaling resulted in short-channel effect, which decreases power efficiency dramatically, so clock frequency almost stopped increasing. Although further IC scaling by lithography reduces gate delay, interconnect delay and memory wall are dominant in determining the IC performance. 3D IC technology is a critical technology today because it offers a reasonable route to further improve IC performance. It increases device density, reduces the interconnect delay, and breaks memory wall with the application of 3D stacking using through silicon via. 3D IC also makes one chip package have more functional diversification than those enhanced only by shrinking the size of the features

  1. Thirty years of lithography simulation

    NASA Astrophysics Data System (ADS)

    Mack, Chris A.

    2005-05-01

    Thirty years ago Rick Dill and his team at IBM published the first account of lithography simulation - the accurate description of semiconductor optical lithography by mathematical equations. Since then, lithography simulation has grown dramatically in importance in four important areas: as a research tool, as a development tool, as a manufacturing tool, and as a learning tool. In this paper, the history of lithography simulations is traced from its roots to today"s indispensable tools for lithographic technology development. Along the way, an attempt will be made to define the true value of lithography simulation to the semiconductor industry.

  2. One-pass manufacturing of multimaterial colloidal particles using optical recognition-enhanced laser direct imaging lithography

    NASA Astrophysics Data System (ADS)

    Kavčič, Blaž; Kokot, Gašper; Poberaj, Igor; Babić, Dušan; Osterman, Natan

    2016-02-01

    We report on a maskless lithography rapid prototyping system for the fabrication of multimaterial hybrid structures in standard i-line negative photoresists enriched by the addition of functionalization particles. The system uses a combination of image recognition methods to detect particle positions in the photoresist and laser direct imaging to illuminate it with a focused ultraviolet laser. A set of acousto-optic deflectors, used to steer the laser, enables precise high-speed illumination of complex patterns. As a result, hybrid micron-sized structures composed of a base particle embedded in a photoresist frame can be manufactured using a one-pass process.

  3. Fabrication of Poly(ethylene glycol) Hydrogel Structures for Pharmaceutical Applications using Electron beam and Optical Lithography

    PubMed Central

    Bae, Misuk; Divan, Ralu; Suthar, Kamlesh J.; Mancini, Derrick C.; Gemeinhart, Richard A.

    2011-01-01

    Soft-polymer based microparticles are currently being applied in many biomedical applications, ranging from bioimaging and bioassays to drug delivery carriers. As one class of soft-polymers, hydrogels are materials, which can be used for delivering drug cargoes and can be fabricated in controlled sizes. Among the various hydrogel-forming polymers, poly(ethylene glycol) (PEG) based hydrogel systems are widely used due to their negligible toxicity and limited immunogenic recognition. Physical and chemical properties of particles (i.e., particle size, shape, surface charge, and hydrophobicity) are known to play an important role in cell-particle recognition and response. To understand the role of physicochemical properties of PEG-based hydrogel structures on cells, it is important to have geometrically precise and uniform hydrogel structures. To fabricate geometrically uniform structures, we have employed electron beam lithography (EBL) and ultra-violet optical lithography (UVL) using PEG or PEG diacrylate polymers. These hydrogel structures have been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), optical microscopy, and attenuated total reflection Fourier-transform infrared spectroscopy (ATR-FTIR) confirming control of chemistry, size, and shape. PMID:21423572

  4. Multi-stencil character projection e-beam lithography: a fast and flexible way for high quality optical metamaterials

    NASA Astrophysics Data System (ADS)

    Huebner, Uwe; Falkner, Matthias; Zeitner, Uwe D.; Banasch, Michael; Dietrich, Kay; Kley, Ernst-Bernhard

    2014-10-01

    In this work we report on the strong improvement of pattern quality and significant write-time reduction using Character Projection with a multi-stencil character stage with more than 2000 apertures for the fabrication of nanomaterials and, in particular, on an optical metamaterial, which is called "Metamaterial Perfect Absorber". The Character Projection ebeam lithography allows the transition from the time-consuming serial to a fast quasi-parallel writing method and opens the way for the fabrication of device areas which are impossible to realize with often in the R&D used SEM based Gaussian electron beam-writers. More than 150.000 times faster than the comparable Gaussian E-beam exposure, 100 times faster and with a factor of 10 improved pattern size homogeneity than the corresponding Variable Shaped E-beam exposure - these are our main results for the fabrication of optical metamaterials using a Variable Shaped E-beam with Character Projection.

  5. Efficient E-Beam Lithography Exposure Strategies for Diffractive X-ray Optics

    SciTech Connect

    Guzenko, V. A.; Vila-Comamala, J.; Gorelick, S.; David, C.; Romijn, J.

    2011-09-09

    Exposure of structures with rotational symmetry by means of electron beam lithography is not trivial, because the e-beam writers are usually designed to deal with the data defined in Cartesian coordinates. Fabrication of circular nanostructures like Fresnel zone plates (FZPs) for x-ray microscopy applications requires exposures with resolution well below 1 nm. Therefore, special attention has to be paid to the efficient exposure data preparation, which will guarantee required precision and allow keeping the exposure time low. In this article, we describe in detail an optimized strategy that was applied for exposure of FZPs by the Vistec EBPG5000Plus e-beam lithography tool. Direct programming of exposure files allowed us to use fully the capabilities of this e-beam writer to expose efficiently and reproducibly FZPs with desired characteristics in both positive and negative tone resists.

  6. Extreme ultraviolet Talbot interference lithography.

    PubMed

    Li, Wei; Marconi, Mario C

    2015-10-01

    Periodic nanopatterns can be generated using lithography based on the Talbot effect or optical interference. However, these techniques have restrictions that limit their performance. High resolution Talbot lithography is limited by the very small depth of focus and the demanding requirements in the fabrication of the master mask. Interference lithography, with large DOF and high resolution, is limited to simple periodic patterns. This paper describes a hybrid extreme ultraviolet lithography approach that combines Talbot lithography and interference lithography to render an interference pattern with a lattice determined by a Talbot image. As a result, the method enables filling the arbitrary shaped cells produced by the Talbot image with interference patterns. Detailed modeling, system design and experimental results using a tabletop EUV laser are presented. PMID:26480070

  7. High-refractive index material design for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Furukawa, Taiichi; Kishida, Takanori; Miyamatsu, Takashi; Kawaguchi, Kazuo; Yamada, Kinji; Tominaga, Tetsuo; Slezak, Mark; Hieda, Katsuhiko

    2007-03-01

    High-refractive-index fluids (HIFs) are being considered to replace water as the immersion fluid in next generation 193nm immersion scanner. At SPIE 2006, we have demonstrated the attractive optical properties and good imaging performance for our HIF candidates, HIL-001 and HIL-002. In this paper, we will describe our latest results on the remaining issues for the practical application of HIF candidates, as well as introduce 3 rd generation fluids for the further extension of ArF immersion lithography. In order to improve the fluid transparency, we have tried two approaches. One is the improvement of transparency for HIL-001 based on a refining technology and the other is to develop a novel HIF candidate by using computational chemistry, which is named HIL-203. By passing through a suitable refining unit, HIL-001 can reach a transmittance of >99%/mm, which is as high as water. This new purification method can be applied to an on-site reuse system. It was also found that the refining unit was very effective to eliminate the impurities coming from the photo-degradation of HIL, chemical substances contamination under the air exposure, and leaching of resist components such as photo-acid generator or quencher. We have developed a new fluid for 3 rd generation immersion fluids. It had a higher refractive index than that of HIL-001 or HIL-203; however, it still falls short of our target value. Additionally, by using a novel design concept, we have developed a top-coat with high refractive index for HIL immersion lithography, which gave an appropriate contact angle for scanning exposure.

  8. Comparison of epoxy- and siloxane-based single-mode optical waveguides defined by direct-write lithography

    NASA Astrophysics Data System (ADS)

    Elmogi, Ahmed; Bosman, Erwin; Missinne, Jeroen; Van Steenberge, Geert

    2016-02-01

    This paper reports on the fabrication and characterization of single-mode polymer optical waveguides at telecom and SOI compatible wavelengths; by making a comparison between an epoxy and a siloxane polymer waveguide material system (both commercially-available). The proposed waveguides can be used in short-reach optical interconnects targeting chip-to-chip communication on the interposer level or providing a coupling interface between single-mode optical fibers and photonic integrated circuits (PICs). This technology enables the integration of optoelectronic chips for photonic packaging purposes. First, the single-mode dimensions (4 × 4 μm2 and 5 × 5 μm2) for both materials at selected wavelengths (1.31 μm and 1.55 μm) were determined based on the refractive index measurements. Then, the waveguides were patterned by a direct-write lithography method. The fabricated waveguides show a high-quality surface with smooth sidewalls. The optical propagation losses were measured using the cut-back method. For the siloxane-based waveguides, the propagation losses were found to be 0.34 dB/cm and 1.36 dB/cm at 1.31 μm and 1.55 μm respectively while for the epoxy-based waveguides the losses were 0.49 dB/cm and 2.23 dB/cm at 1.31 μm and 1.55 μm respectively.

  9. Thin film cryogenic thermometers defined with optical lithography for thermomagnetic measurements on films.

    PubMed

    Nelson, J; Goldman, A M

    2015-05-01

    Resistance thermometers are common secondary thermometers in cryogenic applications. Bulk RuO2 thermometers are used in dilution refrigerators because of their low magnetoresistances in addition to their temperature sensitivity. Thermoelectric and thermomagnetic measurements require multiple thermometers to measure temperature differences. Here, we present a method to fabricate thin film RuO2 thermometers directly onto an experimental substrate. This enhances thermal contact between thermometers and films whose thermoelectric or thermomagnetic properties may be measured. Commercial thermometers have higher temperature sensitivities than the thermometers presented in this study, but commercial thermometers must be carefully heat sunk to the cryostat or sample to be useful. Thin film thermometers can be patterned with ultraviolet (UV) lithography. This allows both the size of the thermometer and its distance from the sample, when also patterned with UV lithography, to be on the order of micrometers. A universal calibration curve for these thin film thermometers has not been produced. The efficacy of these thermometers has been demonstrated through measurements of the Nernst effect in Nb. In this study, the thin film thermometers were calibrated using the cryostat thermometers.

  10. Thin film cryogenic thermometers defined with optical lithography for thermomagnetic measurements on films.

    PubMed

    Nelson, J; Goldman, A M

    2015-05-01

    Resistance thermometers are common secondary thermometers in cryogenic applications. Bulk RuO2 thermometers are used in dilution refrigerators because of their low magnetoresistances in addition to their temperature sensitivity. Thermoelectric and thermomagnetic measurements require multiple thermometers to measure temperature differences. Here, we present a method to fabricate thin film RuO2 thermometers directly onto an experimental substrate. This enhances thermal contact between thermometers and films whose thermoelectric or thermomagnetic properties may be measured. Commercial thermometers have higher temperature sensitivities than the thermometers presented in this study, but commercial thermometers must be carefully heat sunk to the cryostat or sample to be useful. Thin film thermometers can be patterned with ultraviolet (UV) lithography. This allows both the size of the thermometer and its distance from the sample, when also patterned with UV lithography, to be on the order of micrometers. A universal calibration curve for these thin film thermometers has not been produced. The efficacy of these thermometers has been demonstrated through measurements of the Nernst effect in Nb. In this study, the thin film thermometers were calibrated using the cryostat thermometers. PMID:26026531

  11. Point-of-use filtration strategy for negative tone developer in extended immersion and extreme-ultraviolet (EUV) lithography

    NASA Astrophysics Data System (ADS)

    D'Urzo, L.; Foubert, P.; Stokes, H.; Thouroude, Y.; Xia, A.; Wu, Aiwen

    2015-03-01

    Negative tone development (NTD) has dramatically gained popularity in 193 nm dry and immersion lithography, due to their superior imaging performance [1, 2 and 3]. Popular negative tone developers are organic solvents such as n- butyl acetate (n-BA), aliphatic ketones, or high-density alcohols such as Methyl Isobutyl Carbinol (MIBC). In this work, a comparative study between ultra-high molecular weight polyethylene (UPE) and polytetrafluoroethylene (PTFE) POU filtration for n-BA based NTD has been carried out. Results correlate with the occurrence or the mitigation of micro bridges in a 45 nm dense line pattern created through immersion lithography as a function of POU membrane.

  12. Multilayer and grazing incidence X-ray/EUV optics for astronomy and projection lithography; Proceedings of the Meeting, San Diego, CA, July 19-22, 1992

    NASA Technical Reports Server (NTRS)

    Hoover, Richard B. (Editor); Walker, Arthur B. C., Jr. (Editor)

    1993-01-01

    The present volume on multilayer and grazing incidence X-ray/EUV optics for astronomy and projection lithography discusses AXAF grazing incidence mirrors, the theory and high throughput optics of grazing incidence optics, multilayer mirror fabrication and characterization, and multilayer optics for X-ray projection lithography. Attention is given to the VETA-I X-ray detection system, a motion detection system for AXAF X-ray ground testing, image analysis of the AXAF VETA-I X-ray mirror, and optical constants from mirror reflectivities measured at synchrotrons. Topics discussed include the application of aberration theory to calculate encircled energy of Wolter I-II telescopes, W/C multilayers deposited on plastic films, nonspecular X-ray scattering from Si/Mo multilayers, and multilayer thin-film design as FUV polarizers. Also discussed are thin-film filter lifetesting results in the EUV, chromospheric and coronal observations with multilayer optics, present and future requirements of soft X-ray projection lithography, and the imaging Schwarzschild multilayer X-ray microscope.

  13. A novel condenser for EUV lithography ring-field projection optics

    SciTech Connect

    Chapman, H; Nugent, K A

    1999-07-15

    A condenser for a ring-field extreme ultra-violet (EUV) projection lithography camera is presented. The condenser consists of a gently undulating mirror, that we refer to as a ripple plate, and which is illuminated by a collimated beam at grazing incidence. The light is incident along the ripples rather than across them, so that the incident beam is reflected onto a cone and subsequently focused on to the arc of the ring field. A quasistationary illumination is achieved, since any one field point receives light from points on the ripples, which are distributed throughout the condenser pupil. The design concept can easily be applied to illuminate projection cameras with various ring-field and numerical aperture specifications. Ray-tracing results are presented of a condenser for a 0.25 NA EUV projection camera.

  14. Hydrogen Migration and Vinylidene Pathway for Formation of Methane in the 193 nm Photodissociation of Propene: CH3CH=CH2 and CD3CD=CD2

    NASA Technical Reports Server (NTRS)

    Zhao, Yi-Lei; Laufer, Allan H.; Halpern, Joshua B.; Fahr, Askar

    2007-01-01

    Photodissociation channels and the final product yields from the 193 nm photolysis of propene-h6 (CH2=CHCH3) and propene-d6 (CD2=CDCD3) have been investigated, employing gas chromatography, mass spectroscopy, and flame ionization (GC/MS/FID) detection methods. The yields of methane as well as butadiene relative to ethane show considerable variations when propene-h6 or propene-d6 are photolyzed. This suggests significant variances in the relative importance of primary photolytic processes and/or secondary radical reactions, occurring subsequent to the photolysis. Theoretical calculations suggest the potential occurrence of an intramolecular dissociation through a mechanism involving vinylidene formation, accompanied by an ethylenic H-migration through the pi-orbitals. This process affects the final yields of methane-h4 versus methane-d4 with respect to other products. The product yields from previous studies of the 193 nm photolysis of methyl vinyl ketone-h6 and -d6 (CH2=CHCOCH3, CD2=CDCOCD3), alternative precursors for generating methyl and vinyl radicals, are compared with the current results for propene.

  15. Beam pen lithography

    NASA Astrophysics Data System (ADS)

    Huo, Fengwei; Zheng, Gengfeng; Liao, Xing; Giam, Louise R.; Chai, Jinan; Chen, Xiaodong; Shim, Wooyoung; Mirkin, Chad A.

    2010-09-01

    Lithography techniques are currently being developed to fabricate nanoscale components for integrated circuits, medical diagnostics and optoelectronics. In conventional far-field optical lithography, lateral feature resolution is diffraction-limited. Approaches that overcome the diffraction limit have been developed, but these are difficult to implement or they preclude arbitrary pattern formation. Techniques based on near-field scanning optical microscopy can overcome the diffraction limit, but they suffer from inherently low throughput and restricted scan areas. Highly parallel two-dimensional, silicon-based, near-field scanning optical microscopy aperture arrays have been fabricated, but aligning a non-deformable aperture array to a large-area substrate with near-field proximity remains challenging. However, recent advances in lithographies based on scanning probe microscopy have made use of transparent two-dimensional arrays of pyramid-shaped elastomeric tips (or `pens') for large-area, high-throughput patterning of ink molecules. Here, we report a massively parallel scanning probe microscopy-based approach that can generate arbitrary patterns by passing 400-nm light through nanoscopic apertures at each tip in the array. The technique, termed beam pen lithography, can toggle between near- and far-field distances, allowing both sub-diffraction limit (100 nm) and larger features to be generated.

  16. Distortion free projection lithography

    SciTech Connect

    Hawryluk, A.M.; Ceglio, N.M.; Phillion, D.W.; Gaines, D.P.

    1991-07-09

    Soft x-ray projection lithography (SXPL) may be used to fabricate high resolution structures for future devices, but will require an all-reflecting optical system with {approximately} 100 nm resolution and < 10 nm image distortion over large fields-of-view. In present designs, the lithographic tool for SXPL is envisioned as a ring-field'' scanning system with multiple (3--5), possibly aspheric, imaging optics fabricated to {approximately} < 1 nm figure precision. In its present form, several technologies must be developed before this tool can become practical. A simple, non-scanning optical system with less expensive optics, reduced mirror reflection losses and lower source power requirements would be very attractive. We have developed a technique, called Encoded Mask Lithography (EML), which allows for distortion free, high resolution reticle replication over a large field-of-view while using an imaging system with substantial inherent distortion. When applied to SXPL, EML allows us to use a simple, two spherical mirror imaging system. The simplified optical system used in EML eases optic fabrication requirements, obviates the need for mask-to-wafer scanning, and decreases multilayer mirror reflection losses and source power requirements. Although developed for SXPL, this concept is applicable to all forms of projection lithography where distortion over large fields may be a problem. 10 refs., 4 figs.

  17. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  18. In die mask overlay control for 14nm double-patterning lithography

    NASA Astrophysics Data System (ADS)

    Chou, William; Cheng, James; Tseng, Alex C. P.; Wu, J. K.; Chang, Chin Kuei; Cheng, Jeffrey; Lee, Adder; Huang, Chain Ting; Peng, N. T.; Hsu, Simon C. C.; Yu, Chun Chi; Lu, Colbert; Yu, Julia; Craig, Peter; Pollock, Chuck; Ham, Young; McMurran, Jeff

    2015-10-01

    According to the ITRS roadmap, semiconductor industry drives the 193nm lithography to its limits, using techniques like Double Pattern Technology (DPT), Source Mask Optimization (SMO) and Inverse Lithography Technology (ILT). In terms of considering the photomask metrology, full in-die measurement capability is required for registration and overlay control with challenging specifications for repeatability and accuracy. Double patterning using 193nm immersion lithography has been adapted as the solution to enable 14nm technology nodes. The overlay control is one of the key figures for the successful realization of this technology. In addition to the various error contributions from the wafer scanner, the reticles play an important role in terms of considering lithographic process contributed errors. Accurate pattern placement of the features on reticles with a registration error below 4nm is mandatory to keep overall photomask contributions to overlay of sub 20nm logic within the allowed error budget. In this paper, we show in-die registration errors using 14nm DPT product masks, by measuring in-die overlay patterns comparing with regular registration patterns. The mask measurements are used to obtain an accurate model to predict mask contribution on wafer overlay of double patterning technology.

  19. Preliminary characterisation of new glass reference materials (GSA-1G, GSC-1G, GSD-1G and GSE-1G) by laser ablation-inductively coupled plasma-mass spectrometry using 193 nm, 213 nm and 266 nm wavelengths

    USGS Publications Warehouse

    Guillong, M.; Hametner, K.; Reusser, E.; Wilson, S.A.; Gunther, D.

    2005-01-01

    New glass reference materials GSA-1G, GSC-1G, GSD-1G and GSE-1G have been characterised using a prototype solid state laser ablation system capable of producing wavelengths of 193 nm, 213 nm and 266 nm. This system allowed comparison of the effects of different laser wavelengths under nearly identical ablation and ICP operating conditions. The wavelengths 213 nm and 266 nm were also used at higher energy densities to evaluate the influence of energy density on quantitative analysis. In addition, the glass reference materials were analysed using commercially available 266 nm Nd:YAG and 193 nm ArF excimer lasers. Laser ablation analysis was carried out using both single spot and scanning mode ablation. Using laser ablation ICP-MS, concentrations of fifty-eight elements were determined with external calibration to the NIST SRM 610 glass reference material. Instead of applying the more common internal standardisation procedure, the total concentration of all element oxide concentrations was normalised to 100%. Major element concentrations were compared with those determined by electron microprobe. In addition to NIST SRM 610 for external calibration, USGS BCR-2G was used as a more closely matrix-matched reference material in order to compare the effect of matrix-matched and non matrix-matched calibration on quantitative analysis. The results show that the various laser wavelengths and energy densities applied produced similar results, with the exception of scanning mode ablation at 266 nm without matrix-matched calibration where deviations up to 60% from the average were found. However, results acquired using a scanning mode with a matrix-matched calibration agreed with results obtained by spot analysis. The increased abundance of large particles produced when using a scanning ablation mode with NIST SRM 610, is responsible for elemental fractionation effects caused by incomplete vaporisation of large particles in the ICP.

  20. A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

    NASA Technical Reports Server (NTRS)

    Sewell, James S.; Bozada, Christopher A.

    1994-01-01

    Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially

  1. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Hatakeyama, Masahiro; Terao, Kenji; Watanabe, Hidehiro

    2016-04-01

    Extreme ultraviolet lithography (EUVL) patterned mask defect detection is a major issue that must be addressed to realize EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics for integration into a mask inspection system, and the resulting PEM system performs well in half-pitch (hp) 16-nm-node EUVL patterned mask inspection applications. A learning system has been used in this PEM patterned mask inspection tool. The PEM identifies defects using the "defectivity" parameter that is derived from the acquired image characteristics. The learning system has been developed to reduce the labor and the costs associated with adjustment of the PEM's detection capabilities to cope with newly defined mask defects. The concepts behind this learning system and the parameter optimization flow are presented here. The learning system for the PEM is based on a library of registered defects. The learning system then optimizes the detection capability by reconciling previously registered defects with newly registered defects. Functional verification of the learning system is also described, and the system's detection capability is demonstrated by applying it to the inspection of hp 11-nm EUV masks. We can thus provide a user-friendly mask inspection system with reduced cost of ownership.

  2. The interaction of 193-nm excimer laser radiation with single-crystal zinc oxide: The generation of atomic Zn line emission at laser fluences below breakdown

    SciTech Connect

    Khan, Enamul H.; Langford, S. C.; Dickinson, J. T.; Boatner, L. A.

    2013-08-28

    The production of gas phase atomic and ionic line spectra accompanying the high laser fluence irradiation of solid surfaces is well known and is most often due to the production and interaction of high densities of atoms, ions, and electrons generated from laser-induced breakdown. The resulting plasma expands and moves rapidly away from the irradiated spot and is accompanied by intense emission of light. This type of “plume” is well studied and is frequently exploited in the technique of chemical analysis known as laser induced breakdown spectroscopy. Here, we describe a similar but weaker emission of light generated in vacuum by the laser irradiation of single crystal ZnO at fluences well below breakdown; this emission consists entirely of optical line emission from excited atomic Zn. We compare the properties of the resulting laser-generated gas-phase light emission (above and below breakdown) and describe a mechanism for the production of the low-fluence optical emission resulting from a fortuitous choice of material and laser wavelength.

  3. Defectivity reduction studies for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Matsunaga, Kentaro; Kondoh, Takehiro; Kato, Hirokazu; Kobayashi, Yuuji; Hayasaki, Kei; Ito, Shinichi; Yoshida, Akira; Shimura, Satoru; Kawasaki, Tetsu; Kyoda, Hideharu

    2007-03-01

    Immersion lithography is widely expected to meet the manufacturing requirements of future device nodes. A critical development in immersion lithography has been the construction of a defect-free process. Two years ago, the authors evaluated the impact of water droplets made experimentally on exposed resist films and /or topcoat. (1) The results showed that the marks of drying water droplet called watermarks became pattern defects with T-top profile. In the case that water droplets were removed by drying them, formation of the defects was prevented. Post-exposure rinse process to remove water droplets also prevented formation of the defects. In the present work, the authors evaluated the effect of pre- and post-exposure rinse processes on hp 55nm line and space pattern with Spin Rinse Process Station (SRS) and Post Immersion Rinse Process Station (PIR) modules on an inline lithography cluster with the Tokyo Electron Ltd. CLEAN TRACK TM LITHIUS TM i+ and ASML TWINSCAN XT:1700Fi , 193nm immersion scanner. It was found that total defectivity is decreased by pre- and post-exposure rinse. In particular, bridge defects and large bridge defects were decreased by pre- and post-exposure rinse. Pre- and post-exposure rinse processes are very effective to reduce the bridge and large bridge defects of immersion lithography.

  4. Defect tracking for nanoimprint lithography using optical surface scanner and scanning electron microscope

    NASA Astrophysics Data System (ADS)

    Yu, Zhaoning; Kurataka, Nobuo; Tran, Hieu; Gauzner, Gene

    2016-09-01

    Fast optical surface scanners are used in combination with high-resolution scanning electron microscopes to facilitate the identification and tracking of nanoimprint defects. We have confirmed that hard particles cause permanent template damages during imprint, resulting in repeating imprint defects. Since contaminants encountered during imprint are dominated by hard metal oxide particles capable of causing such damage, stringent pre-imprint substrate screening is a critical requirement in a manufacturing environment.

  5. Nanoimprint lithography for nanodevice fabrication

    NASA Astrophysics Data System (ADS)

    Barcelo, Steven; Li, Zhiyong

    2016-09-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  6. Controllable liquid colour-changing lenses with microfluidic channels for vision protection, camouflage and optical filtering based on soft lithography fabrication.

    PubMed

    Zhang, Min; Li, Songjing

    2016-01-01

    In this work, liquid colour-changing lenses for vision protection, camouflage and optical filtering are developed by circulating colour liquids through microfluidic channels on the lenses manually. Soft lithography technology is applied to fabricate the silicone liquid colour-changing layers with microfluidic channels on the lenses instead of mechanical machining. To increase the hardness and abrasion resistance of the silicone colour-changing layers on the lenses, proper fabrication parameters such as 6:1 (mass ration) mixing proportion and 100 °C curing temperature for 2 h are approved for better soft lithography process of the lenses. Meanwhile, a new surface treatment for the irreversible bonding of silicone colour-changing layer with optical resin (CR39) substrate lens by using 5 % (volume ratio) 3-Aminopropyltriethoxysilane solution is proposed. Vision protection, camouflage and optical filtering functions of the lenses are investigated with different designs of the channels and multi-layer structures. Each application can not only well achieve their functional demands, but also shows the advantages of functional flexibility, rapid prototyping and good controllability compared with traditional ways. Besides optometry, some other designs and applications of the lenses are proposed for potential utility in the future. PMID:27247877

  7. Bridging the gap from mask to physical design for multiple patterning lithography

    NASA Astrophysics Data System (ADS)

    Yu, Bei; Gao, Jhih-Rong; Xu, Xiaoqing; Pan, David Z.

    2014-03-01

    Due to the delay of EUVL, multiple patterning techniques have been used to extend the 193nm lithography to 22nm/14nm nodes, and possibly further. There are many studies on MPL layout decompositions at the mask synthesis stage to resolve the coloring conflicts, minimize the stitches, balance the mask density, or even mitigate the undesirable overlay effects. Meanwhile, there are studies showing that it is very important to consider the multiple patterning implications at earlier physical design stages so that the overall design and manufacturing closure can be reached. In this paper, we will show some recent results and propose a unified physical design methodology for standard cell compliance, pin access, routing, and placement to bridge the gap from mask/layout decomposition to physical design, while accommodating various requirements from double/triple patterning lithography in certain "correct by construction" manner.

  8. VUV lithography

    DOEpatents

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  9. VUV lithography

    DOEpatents

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  10. Maskless lithography

    DOEpatents

    Sweatt, W.C.; Stulen, R.H.

    1999-02-09

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

  11. Maskless lithography

    DOEpatents

    Sweatt, William C.; Stulen, Richard H.

    1999-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  12. Organic solvent-free sugar-based transparency nanopatterning material derived from biomass for eco-friendly optical biochips using green lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Oshima, Akihiro; Oyama, Tomoko G.; Ito, Kenta; Sugahara, Kigenn; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

    2014-05-01

    An organic solvent-free sugar-based transparency nanopatterning material which had specific desired properties such as nanostructures of subwavelength grating and moth-eye antireflection, acceptable thermal stability of 160 °C, and low imaginary refractive index of less than 0.005 at 350-800 nm was proposed using electron beam lithography. The organic solvent-free sugar-based transparency nanopatterning material is expected for non-petroleum resources, environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of tetramethylammonium hydroxide. 120 nm moth-eye antireflection nanopatterns images with exposure dose of 10 μC/cm2 were provided by specific process conditions of electron beam lithography. The developed sugar derivatives with hydroxyl groups and EB sensitive groups in the organic solvent-free sugar-based transparency nanopatterning material were applicable to future development of optical interface films of biology and electronics as a novel chemical design.

  13. Why bother with x-ray lithography?

    NASA Astrophysics Data System (ADS)

    Smith, Henry I.; Schattenburg, Mark L.

    1992-07-01

    The manufacture of state-of-the-art integrated circuits uses UV optical projection lithography. Conventional wisdom (i.e., the trade journals) holds that this technology will take the industry to quarter-micrometer minimum features sizes and below. So, why bother with X-ray lithography? The reason is that lithography is a 'system problem', and proximity X-ray lithography is better matched to that system problem than any other technology, once the initial investment is surmounted. X-ray lithography offers the most cost-effective path to the future of ultra-large-scale integrated circuits with feature sizes of tenth micrometer and below (i.e., gigascale electronics and quantum-effect electronics).

  14. X-ray diffraction imaging of metal–oxide epitaxial tunnel junctions made by optical lithography: use of focused and unfocused X-ray beams

    PubMed Central

    Mocuta, Cristian; Barbier, Antoine; Stanescu, Stefan; Matzen, Sylvia; Moussy, Jean-Baptiste; Ziegler, Eric

    2013-01-01

    X-ray diffraction techniques are used in imaging mode in order to characterize micrometre-sized objects. The samples used as models are metal–oxide tunnel junctions made by optical lithography, with lateral sizes ranging from 150 µm down to 10 µm and various shapes: discs, squares and rectangles. Two approaches are described and compared, both using diffraction contrast: full-field imaging (topography) and raster imaging (scanning probe) using a micrometre-sized focused X-ray beam. It is shown that the full-field image gives access to macroscopic distortions (e.g. sample bending), while the local distortions, at the micrometre scale (e.g. tilts of the crystalline planes in the vicinity of the junction edges), can be accurately characterized only using focused X-ray beams. These local defects are dependent on the junction shape and larger by one order of magnitude than the macroscopic curvature of the sample. PMID:23412494

  15. Extreme ultraviolet lithography machine

    SciTech Connect

    Tichenor, D.A.; Kubiak, G.D.; Haney, S.J.; Sweeney, D.W.

    2000-02-29

    An extreme ultraviolet lithography (EUVL) machine or system is disclosed for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10--14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  16. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  17. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, Natale M.; Markle, David A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  18. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  19. Bubble-Pen Lithography.

    PubMed

    Lin, Linhan; Peng, Xiaolei; Mao, Zhangming; Li, Wei; Yogeesh, Maruthi N; Rajeeva, Bharath Bangalore; Perillo, Evan P; Dunn, Andrew K; Akinwande, Deji; Zheng, Yuebing

    2016-01-13

    Current lithography techniques, which employ photon, electron, or ion beams to induce chemical or physical reactions for micro/nano-fabrication, have remained challenging in patterning chemically synthesized colloidal particles, which are emerging as building blocks for functional devices. Herein, we develop a new technique - bubble-pen lithography (BPL) - to pattern colloidal particles on substrates using optically controlled microbubbles. Briefly, a single laser beam generates a microbubble at the interface of colloidal suspension and a plasmonic substrate via plasmon-enhanced photothermal effects. The microbubble captures and immobilizes the colloidal particles on the substrate through coordinated actions of Marangoni convection, surface tension, gas pressure, and substrate adhesion. Through directing the laser beam to move the microbubble, we create arbitrary single-particle patterns and particle assemblies with different resolutions and architectures. Furthermore, we have applied BPL to pattern CdSe/ZnS quantum dots on plasmonic substrates and polystyrene (PS) microparticles on two-dimensional (2D) atomic-layer materials. With the low-power operation, arbitrary patterning and applicability to general colloidal particles, BPL will find a wide range of applications in microelectronics, nanophotonics, and nanomedicine.

  20. Gradient-based inverse extreme ultraviolet lithography.

    PubMed

    Ma, Xu; Wang, Jie; Chen, Xuanbo; Li, Yanqiu; Arce, Gonzalo R

    2015-08-20

    Extreme ultraviolet (EUV) lithography is the most promising successor of current deep ultraviolet (DUV) lithography. The very short wavelength, reflective optics, and nontelecentric structure of EUV lithography systems bring in different imaging phenomena into the lithographic image synthesis problem. This paper develops a gradient-based inverse algorithm for EUV lithography systems to effectively improve the image fidelity by comprehensively compensating the optical proximity effect, flare, photoresist, and mask shadowing effects. A block-based method is applied to iteratively optimize the main features and subresolution assist features (SRAFs) of mask patterns, while simultaneously preserving the mask manufacturability. The mask shadowing effect may be compensated by a retargeting method based on a calibrated shadowing model. Illustrative simulations at 22 and 16 nm technology nodes are presented to validate the effectiveness of the proposed methods. PMID:26368764

  1. Laser Scanning Holographic Lithography for Flexible 3D Fabrication of Multi-Scale Integrated Nano-structures and Optical Biosensors.

    PubMed

    Yuan, Liang Leon; Herman, Peter R

    2016-01-01

    Three-dimensional (3D) periodic nanostructures underpin a promising research direction on the frontiers of nanoscience and technology to generate advanced materials for exploiting novel photonic crystal (PC) and nanofluidic functionalities. However, formation of uniform and defect-free 3D periodic structures over large areas that can further integrate into multifunctional devices has remained a major challenge. Here, we introduce a laser scanning holographic method for 3D exposure in thick photoresist that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form uniform 3D nanostructure with beam size scaled to small 200 μm diameter. In this way, laser scanning is presented as a facile means to embed 3D PC structure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems.

  2. Laser Scanning Holographic Lithography for Flexible 3D Fabrication of Multi-Scale Integrated Nano-structures and Optical Biosensors

    NASA Astrophysics Data System (ADS)

    Yuan, Liang (Leon); Herman, Peter R.

    2016-02-01

    Three-dimensional (3D) periodic nanostructures underpin a promising research direction on the frontiers of nanoscience and technology to generate advanced materials for exploiting novel photonic crystal (PC) and nanofluidic functionalities. However, formation of uniform and defect-free 3D periodic structures over large areas that can further integrate into multifunctional devices has remained a major challenge. Here, we introduce a laser scanning holographic method for 3D exposure in thick photoresist that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form uniform 3D nanostructure with beam size scaled to small 200 μm diameter. In this way, laser scanning is presented as a facile means to embed 3D PC structure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems.

  3. Laser Scanning Holographic Lithography for Flexible 3D Fabrication of Multi-Scale Integrated Nano-structures and Optical Biosensors

    PubMed Central

    Yuan, Liang (Leon); Herman, Peter R.

    2016-01-01

    Three-dimensional (3D) periodic nanostructures underpin a promising research direction on the frontiers of nanoscience and technology to generate advanced materials for exploiting novel photonic crystal (PC) and nanofluidic functionalities. However, formation of uniform and defect-free 3D periodic structures over large areas that can further integrate into multifunctional devices has remained a major challenge. Here, we introduce a laser scanning holographic method for 3D exposure in thick photoresist that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form uniform 3D nanostructure with beam size scaled to small 200 μm diameter. In this way, laser scanning is presented as a facile means to embed 3D PC structure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems. PMID:26922872

  4. Patterning via optical saturable transitions

    NASA Astrophysics Data System (ADS)

    Cantu, Precious

    For the past 40 years, optical lithography has been the patterning workhorse for the semiconductor industry. However, as integrated circuits have become more and more complex, and as device geometries shrink, more innovative methods are required to meet these needs. In the far-field, the smallest feature that can be generated with light is limited to approximately half the wavelength. This, so called far-field diffraction limit or the Abbe limit (after Prof. Ernst Abbe who first recognized this), effectively prevents the use of long-wavelength photons >300nm from patterning nanostructures <100nm. Even with a 193nm laser source and extremely complicated processing, patterns below ˜20nm are incredibly challenging to create. Sources with even shorter wavelengths can potentially be used. However, these tend be much more expensive and of much lower brightness, which in turn limits their patterning speed. Multi-photon reactions have been proposed to overcome the diffraction limit. However, these require very large intensities for modest gain in resolution. Moreover, the large intensities make it difficult to parallelize, thus limiting the patterning speed. In this dissertation, a novel nanopatterning technique using wavelength-selective small molecules that undergo single-photon reactions, enabling rapid top-down nanopatterning over large areas at low-light intensities, thereby allowing for the circumvention of the far-field diffraction barrier is developed and experimentally verified. This approach, which I refer to as Patterning via Optical Saturable Transitions (POST) has the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is currently possible with conventional optical lithographic techniques. The fundamental understanding of this technique goes beyond optical lithography in the semiconductor industry and is applicable to any area that requires the rapid patterning of large-area two or three

  5. Structural and optical characteristics of graphene quantum dots size-controlled and well-aligned on a large scale by polystyrene-nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Duck Oh, Si; Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Jang, Chan Wook; Kim, Sung; Choi, Suk-Ho

    2016-01-01

    Graphene quantum dots (GQDs) are one of the most attractive graphene nanostructures due to their potential optoelectronic device applications, but it is a challenge to accurately control the size and arrangement of GQDs. In this report, we fabricate well-aligned GQDs on a large area by polystyrene (PS)-nanosphere (NS) lithography and study their structural and optical properties. Single-layer graphene grown on a Cu foil by chemical vapour deposition is patterned by reactive ion etching employing aligned PS-NS arrays as an etching mask. The size (d) of the GQDs is controlled from 75 to 23 nm by varying the etching time, as proved by scanning electron microscopy and atomic force microscopy. This method is well valid for both rigid/flexible target substrates and even for multilayer graphene formed by piling up single layers. The absorption peak of the GQDs is blue-shifted with respect to that of a graphene sheet, and is sequentially shifted to higher energies by reducing d, consistent with the quantum confinement effect (QCE). The Raman D-to-G band intensity ratio shows an almost monotonic increase with decreasing d, resulting from the dominant contribution of the edge states at the periphery of smaller GQDs. The G-band frequency shows a three-step size-dependence: initial increase, interim saturation, and final decrease with decreasing d, thought to be caused by the competition between the QCE and edge-induced strain effect.

  6. Cost-effective x-ray lithography

    NASA Astrophysics Data System (ADS)

    Roltsch, Tom J.

    1991-08-01

    The push towards faster, denser VLSI device structures and eventually to ULSI devices means ever-decreasing design rules for IC manufacturers. In order to define patterns on silicon and gallium arsenide substrates with feature sizes of 0.25 microns, lithography, metallization, and electronic materials processing techniques will be pushed beyond current limitations. Of these technologies, lithography in the sub-0.5 micron region appears to be the main obstacle yet to be overcome. As deep-UV optical systems become more expensive and the useful field sized decrease in the attempt to achieve finer resolutions, the question of whether to switch to an alternate lithographic method becomes imminent. X-ray lithography is the leading candidate. In this paper, the question of whether x-ray lithography is economically superior to optical lithography and the cost-effectiveness of x-ray lithography are addressed. Also, the question of how x-ray lithography can be performed in a production environment is considered. First shown is that more elaborate optical systems are simply not going to match x-ray proximity system in terms of resolution because of the need to use exotic lens materials or complicated and ever finer reflection systems, none of which can correct for diffraction effects, yet must be corrected for every other aberration. The economic superiority of a synchrotron-based x- ray lithography beamline is demonstrated in a production facility using a processing-cost model based on Shinji Okazaki's cost-per-bit model. Considered, as well, is the strong possibility that exists for the use of an optically based production line which would use an anode or plasma x-ray stepper to define only the smallest geometries, such as the gate level on a DRAM chip. It is shown that it is unlikely, even pushing the limits of materials and optics, that deep-UV systems will be able to define patterns below 0.35 microns in a production environment. X-ray lithography systems could define 0

  7. EUV Lithography: New Metrology Challenges

    SciTech Connect

    Wood, Obert

    2007-09-26

    Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 22 nm half-pitch device node and beyond. Because its imaging wavelength is approximately twenty times shorter than those currently in use (13.5 nm versus 193-248 nm) and because EUV optics and masks must be provided with highly-precise reflective multilayer coatings, EUV lithography presents a number of new and difficult metrology challenges. In this paper, the current status of the metrology tools being used to characterize the figure and finish of EUV mirror surfaces, the defectivity and flatness of EUV mask blanks and the outgassing rates of EUV resist materials are discussed.

  8. Label-free optical detection of C-reactive protein by nanoimprint lithography-based 2D-photonic crystal film.

    PubMed

    Endo, Tatsuro; Kajita, Hiroshi; Kawaguchi, Yukio; Kosaka, Terumasa; Himi, Toshiyuki

    2016-06-01

    The development of high-sensitive, and cost-effective novel biosensors have been strongly desired for future medical diagnostics. To develop novel biosensor, the authors focused on the specific optical characteristics of photonic crystal. In this study, a label-free optical biosensor, polymer-based two-dimensional photonic crystal (2D-PhC) film fabricated using nanoimprint lithography (NIL), was developed for detection of C-reactive protein (CRP) in human serum. The nano-hole array constructed NIL-based 2D-PhC (hole diameter: 230 nm, distance: 230, depth: 200 nm) was fabricated on a cyclo-olefin polymer (COP) film (100 µm) using thermal NIL and required surface modifications to reduce nonspecific adsorption of target proteins. Antigen-antibody reactions on the NIL-based 2D-PhC caused changes to the surrounding refractive index, which was monitored as reflection spectrum changes in the visible region. By using surface modified 2D-PhC, the calculated detection limit for CRP was 12.24 pg/mL at an extremely short reaction time (5 min) without the need for additional labeling procedures and secondary antibody. Furthermore, using the dual-functional random copolymer, CRP could be detected in a pooled blood serum diluted 100× with dramatic reduction of nonspecific adsorption. From these results, the NIL-based 2D-PhC film has great potential for development of an on-site, high-sensitivity, cost-effective, label-free biosensor for medical diagnostics applications. PMID:27150702

  9. Limitation of blend type of resist platform on EUV lithography

    NASA Astrophysics Data System (ADS)

    Hirayama, Taku; Kim, Su Min; Na, Hai Sub; Koh, Chawon; Kim, Hyun Woo

    2012-03-01

    Chemically amplified resist (CAR) system is being widely used not only for 248 nm and 193 nm lithography but for Extreme Ultra Violet Lithography (EUVL).[1] And CAR system is based on blend resist platform which is formulated with polymer and photo-acid generator (PAG) independently. In EUVL to aim at 22 nm node and beyond, EUV resists are required to achieve much higher acid generation efficiency and overcome RLS (Resolution, Line edge roughness, Sensitivity) trade-off using some ideas such as increase in PAG concentration and film absorption coefficient, suppression of acid diffusion length and so on.[2-6] Increase in PAG loading ratio is a promising strategy to improve EUV resist performance,[7-10] however there must be upper limitation of PAG loading ratio on blend resist platform due to lowering film Tg induced by a plasticization effect of blended PAG. This plasticization effect of blended PAG would have another impact to increase acid diffusion length, resulting in low resolution and significant thickness loss, especially on ultra thin film condition. On the other hand, utilizing the PAG having bulky cation structure was beneficial in order to maintain dark loss (in other word, top loss) of the patterned features, however, this type of cation would show low quantum yield driven by the substituent on a cation structure, so that total performance such as ultimate resolution deteriorated. From these results, the bound resist platform which has PAG unit on polymer backbone as branch would be promising platform because of its potential advantages such as suppression of dark loss, no plasticization effect and control of acid diffusion.

  10. Readability dependence on lithography conditions for printing code marks using a squared optical fiber matrix and light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Watanabe, Jun; Kato, Kazuhide; Iwasaki, Jun-ya; Horiuchi, Toshiyuki

    2015-06-01

    The direct readability of code marks printed using a new exposure system was investigated. In the new exposure system, code-mark patterns were printed using LEDs as exposure sources and squared optical-fiber ends as code-mark elements. A 10 × 10 fiber matrix was fabricated, and light emitted from each LED was led to each fiber. Because gaps appeared between the code-mark cells, a long exposure time was adopted, and the gaps between cells were eliminated by giving an overdose of light. After code-mark patterns were stably printed, their readability was investigated using a commercial code-mark reader. It was found that all the printed code marks were readable without errors. In concrete, same 100 identical marks printed on a wafer were readable. Moreover, six kinds of marks were repeatedly detected more than 100 times with no reading errors.

  11. Improved near field lithography by surface plasmon resonance

    NASA Astrophysics Data System (ADS)

    Zeng, Beibei; Zhao, Yanhui; Fang, Liang; Wang, Changtao; Luo, Xiangang

    2009-05-01

    Conventionally, the finest pattern obtained in optical lithography is determined by wavelength and numerical aperture of optical system, due to diffraction effect. This principle delivers theoretical obstacles for nano lithography using conventional light source, like Hg lamp. According to theory, this obstacle can be circumvented with near field lithography (NFL) technique, just by confining the mask and photo resist into sub-wavelength dimensions. Sub-wavelength patterns with features down to 100nm can be realized in the NFL, as demonstrated numerically and experimentally in many papers. One obvious problem associated with NFL is that low efficiency in the lithography process, since it is difficult to transmit through sub-wavelength scaled apertures in the mask. This usually results in the deleterious effect to the patterns on photo resist. In this paper, we demonstrate that the extraordinary optical transmission (EOT) effect helps to solve this problem. It is found that noble metal, instead of chromium, usually gives much greater transmission when employed as mask material. The enhancement is contributed to resonant excitation of surface plasmon mode. Further, the transmission can be enhanced by appropriately design of patterns. The polarization of illumination light affects lithography efficiency as well. As illustrative examples, mask patterns like lines group, grating structure and holes array are designed and simulated with greatly improved lithography efficiency. This method is believed to have potential applications in nano lithography.

  12. Low-loss and flatband silicon-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by ArF-immersion lithography process on a 300-mm SOI wafer

    NASA Astrophysics Data System (ADS)

    Jeong, Seok-Hwan; Shimura, Daisuke; Simoyama, Takasi; Seki, Miyoshi; Yokoyama, Nobuyuki; Ohtsuka, Minoru; Koshino, Keiji; Horikawa, Tsuyoshi; Tanaka, Yu; Morito, Ken

    2014-03-01

    We present flatband, low-loss and low-crosstalk characteristics of Si-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by ArF-immersion lithography process on a 300-mm silicon-on-insulator (SOI) wafer. We theoretically specified why phase controllability over Si-nanowire waveguides is prerequisite to attain desired spectral response, discussing spectral degradation by random phase errors during fabrication process. It was experimentally demonstrated that advanced patterning technology based on ArF-immersion lithography process showed extremely low phase errors even for Si-nanowire channel waveguides. As a result, the device exhibited extremely low loss of <0.2dB and low crosstalk of <-40dB without any external phase compensation. Furthermore, fairly good spectral uniformity for all fabricated devices was found both in intra-dies and inter-dies. The center wavelengths for box-like drop channel responses were distributed within 0.4 nm in the same die. This tendency was kept nearly constant for other dies on the 300-mm SOI wafer. In the case of the inter-die distribution where each die is spaced by ~3cm, the deviation of the center wavelengths was as low as +/-1.8 nm between the dies separated by up to ~15 cm. The spectral superiority was reconfirmed by measuring 25 Gbps modulation signals launched into the device. Clear eye openings were observed as long as the optical signal wavelengths are stayed within the flat-topped passband of the 5th-order CROW. We believe these high-precision fabrication technologies based on 300-mm SOI wafer scale ArF-immersion lithography would be promising for several kinds of WDM multiplexers/demultiplexers having much complicated configurations and requiring much finer phase controllability.

  13. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-03-10

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features

  14. Photoinhibition superresolution lithography

    NASA Astrophysics Data System (ADS)

    Forman, Darren Lawrence

    While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

  15. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.

    PubMed

    Ashby, Paul D; Olynick, Deirdre L; Ogletree, D Frank; Naulleau, Patrick P

    2015-10-14

    Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2 nm line-edge roughness, and 20 mJ cm(-2) exposure dose. Here, the current state of the development of EUV resist materials is reviewed. First, pattern formation in resist materials is described and the Hansen solubility sphere (HSS) is used as a framework for understanding the pattern-development process. Then, recent progress in EUVL resist chemistry and characterization is discussed. Incremental advances are obtained by transferring chemically amplified resist materials developed for 193 nm lithography to EUV wavelengths. Significant advances will result from synthesizing high-absorbance resist materials using heavier atoms. In the framework of the HSS model, these materials have significant room for improvement and thus offer great promise as high-performance EUV resists for patterning of sub-10 nm features. PMID:26079187

  16. Fabrication of metallic nanowires and nanoribbons using laser interference lithography and shadow lithography

    SciTech Connect

    Park, Joong- Mok; Nalwa, Kanwar Singh; Leung, Wai; Constant, Kristen; Chaudhary, Sumit; Ho, Kai-Ming

    2010-04-30

    Ordered and free-standing metallic nanowires were fabricated by e-beam deposition on patterned polymer templates made by interference lithography. The dimensions of the nanowires can be controlled through adjustment of deposition conditions and polymer templates. Grain size, polarized optical transmission and electrical resistivity were measured with ordered and free-standing nanowires.

  17. Lithography trends based on projections of the ITRS (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Arden, Wolfgang

    2005-06-01

    The microelectronic industry has gone through an enormous technical evolution in the last four decades. Both the tech-nological and economic challenges of microelectronics were increasing consistently in the past few years. This paper discusses the future trends in micro- and nano-technologies with special emphasis on lithography. The trends of minia-turization will be sketched with reference to the International Technology Roadmap for Semiconductors (ITRS). After a description of general trends in technology node timing, an overview will be given on the future lithography require-ments and the technical solutions including options for post-optical lithography as, for example, Extreme UV.

  18. Self-aligned double patterning process for 32/32nm contact/space and beyond using 193 immersion lithography

    NASA Astrophysics Data System (ADS)

    Mebarki, Bencherki; Miao, Liyan; Chen, Yongmei; Yu, James; Blanco, Pokhui; Makeeff, James; Shu, Jen; Bencher, Christopher; Naik, Mehul; Ngai, Christopher Sui Wing

    2010-04-01

    State of the art production single print lithography for contact is limited to ~43-44nm half-pitch given the parameters in the classic photolithography resolution formula for contacts in 193 immersion tool (k1 >= 0.3, NA = 1.35, and λ = 193nm). Single print lithography limitations can be overcome by (1) Process / Integration based techniques such as double-printing (DP), and spacer based self-aligned double patterning (SADP), (2) Non-standard printing techniques such as electron-beam (eBeam), extreme ultraviolet lithography (EUVL), nano-imprint Lithography (NIL). EUV tools are under development, while nanoimprint is a developmental tool only. Spacer based SADP for equal line/space is well documented as successful patterning technique for 3xnm and beyond. In this paper, we present an adaptation of selfaligned double patterning process to 2-D regular 32/32nm contact/space array. Using SADP process, we successfully achieved an equal contact/space of 32/32nm using 193 immersion lithography that is only capable of 43-44nm resolvable half-pitch contact printing. The key and unique innovation of this work is the use of a 2-D (x and y axis) pillar structure to achieve equal contact/space. Final result is a dense contact array of 32nm half-pitch in 2-D structure (x and y axis). This is achieved on simplified stack of Substrate / APF / Nitride. Further transfer of this new contact pattern from nitride to the substrate (e.g., Oxide, APF, Poly, Si...) is possible. The technique is potentially extendible to 22/22nm contact/space and beyond.

  19. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  20. Evolution in the concentration of activities in lithography

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    2016-03-01

    From a perusal of the proceedings of the SPIE Advanced Lithography Symposium, the progression of new concepts in lithographic technology can be seen. A new idea first appears in a few papers, and over time, there is an increase in the number of papers on the same topic. Eventually the method becomes commonplace, and the number of papers on the topic declines, as the idea becomes part of our industry's working knowledge. For example, one or two papers on resolution enhancement techniques (RETs) appeared in the proceedings of the Optical Microlithography Conference in 1989 and 1990. By 1994, the total number of papers had increased to 35. Early lithographers focused on practical issues, such as adhesion promotion and resist edge bead. The introduction of simulation software brought on the next era of lithography. This was followed by a period of time in which RETs were developed and brought to maturity. The introduction of optical proximity corrections (OPC) initiated the next major era of lithography. The traditional path for scaling by using shorter wavelengths, decreasing k1 and increasing numerical aperture has given way to the current era of optical multiple patterning and lithography-design co-optimization. There has been sufficient activity in EUV lithography R and D to justify a separate EUV Lithography Conference as part of the annual Advanced Lithography Symposium. Each era builds on the cumulative knowledge gained previously. Over time, there have been parallel developments in optics, exposure tools, resist, metrology and mask technology, many of which were associated with changes in the wavelength of light used for leading-edge lithography.

  1. An ice lithography instrument

    NASA Astrophysics Data System (ADS)

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-06-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  2. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  3. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  4. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  5. Mechanism of single-layer 193-nm dissolution inhibition resist

    NASA Astrophysics Data System (ADS)

    Yan, Zhenglin; Houlihan, Francis M.; Reichmanis, Elsa; Nalamasu, Omkaram; Reiser, Arnost; Dabbagh, Gary; Hutton, Richard S.; Osei, Dan; Sousa, Jose; Bolan, Kevin J.

    2000-06-01

    We have found that the progress of developer base into films of terpolymers of norbornene (NB)-maleic anhydride (MA) and acrylic acid (AA) is a percolation process with a critical site concentration of x(c) equals 0.084 which suggests that every acrylic acid site in the terpolymer of norbornene-maleic anhydride-acrylic acid can make 12 monomer units of the polymer water compatible. In practice these systems are being used with various tert-butyl esters of cholic acid as dissolution inhibitors. The cholates differ very much in their dissolution inhibition factors (lowest t-butyl cholate (1.3) to highest t-butyl lithocholate glutarate dimer (7.4). The change in these factors corrected for molarity follow the hydrophobic character of the dissolution as measured by log(p). A quick screening method has also been established to evaluate dissolution inhibitors based on our observation that the cloud point (the volume % acetone in a water/acetone which gives persistent cloudiness) parallels the dissolution inhibiting power as measured by the dissolution inhibition factor. For dissolution promotion, optimal results are obtained with t-butyl 1,3,5-cyclohexanetricarboxylate (f equals -6.3) and poorest results with t-butyl lithocholate (f equals -2.8); this appears to track with the number of carboxyl groups and the hydrophobicity of the carboxylic acids. The Rmax found for resist formulations tracks well with these findings. Another factor in determining the ultimate achievable contrast is the degree of acidolytic deprotection achieved by the material. It appears that acidolyticaly cleaveable carboxylate esters with a higher concentration of electron withdrawing groups such as t-butyl 1,3,5-cyclohexanetricarboxylate are more effective.

  6. Masks for extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y

    1998-09-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

  7. Immersion lithography bevel solutions

    NASA Astrophysics Data System (ADS)

    Tedeschi, Len; Tamada, Osamu; Sanada, Masakazu; Yasuda, Shuichi; Asai, Masaya

    2008-03-01

    The introduction of Immersion lithography, combined with the desire to maximize the number of potential yielding devices per wafer, has brought wafer edge engineering to the forefront for advanced semiconductor manufactures. Bevel cleanliness, the position accuracy of the lithography films, and quality of the EBR cut has become more critical. In this paper, the effectiveness of wafer track based solutions to enable state-of-art bevel schemes is explored. This includes an integrated bevel cleaner and new bevel rinse nozzles. The bevel rinse nozzles are used in the coating process to ensure a precise, clean film edge on or near the bevel. The bevel cleaner is used immediately before the wafer is loaded into the scanner after the coating process. The bevel cleaner shows promise in driving down defectivity levels, specifically printing particles, while not damaging films on the bevel.

  8. Metal-Mesh Lithography

    PubMed Central

    Tang, Zhao; Wei, Qingshan; Wei, Alexander

    2011-01-01

    Metal-mesh lithography (MML) is a practical hybrid of microcontact printing and capillary force lithography that can be applied over millimeter-sized areas with a high level of uniformity. MML can be achieved by blotting various inks onto substrates through thin copper grids, relying on preferential wetting and capillary interactions between template and substrate for pattern replication. The resulting mesh patterns, which are inverted relative to those produced by stenciling or serigraphy, can be reproduced with low micrometer resolution. MML can be combined with other surface chemistry and lift-off methods to create functional microarrays for diverse applications, such as periodic islands of gold nanorods and patterned corrals for fibroblast cell cultures. PMID:22103322

  9. Metal-mesh lithography.

    PubMed

    Tang, Zhao; Wei, Qingshan; Wei, Alexander

    2011-12-01

    Metal-mesh lithography (MML) is a practical hybrid of microcontact printing and capillary force lithography that can be applied over millimeter-sized areas with a high level of uniformity. MML can be achieved by blotting various inks onto substrates through thin copper grids, relying on preferential wetting and capillary interactions between template and substrate for pattern replication. The resulting mesh patterns, which are inverted relative to those produced by stenciling or serigraphy, can be reproduced with low micrometer resolution. MML can be combined with other surface chemistry and lift-off methods to create functional microarrays for diverse applications, such as periodic islands of gold nanorods and patterned corrals for fibroblast cell cultures.

  10. Lithography alternatives meet design style reality: How do they "line" up?

    NASA Astrophysics Data System (ADS)

    Smayling, Michael C.

    2016-03-01

    Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to

  11. Microfluidic Applications of Soft Lithography

    SciTech Connect

    Rose, K A; Krulevitch, P; Hamilton, J

    2001-04-10

    The soft lithography fabrication technique was applied to three microfluidic devices. The method was used to create an original micropump design and retrofit to existing designs for a DNA manipulation device and a counter biological warfare sample preparation device. Each device presented unique and original challenges to the soft lithography application. AI1 design constraints of the retrofit devices were satisfied using PDMS devices created through variation of soft lithography methods. The micropump utilized the versatility of PDMS, creating design options not available with other materials. In all cases, the rapid processing of soft lithography reduced the fabrication time, creating faster turnaround for design modifications.

  12. A particle-in-cell plus Monte Carlo study of plasma-induced damage of normal incidence collector optics used in extreme ultraviolet lithography

    SciTech Connect

    Wieggers, R. C.; Goedheer, W. J.; Akdim, M. R.; Bijkerk, F.; Zegeling, P. A.

    2008-01-01

    We present a kinetic simulation of the plasma formed by photoionization in the intense flux of an extreme ultraviolet lithography (EUVL) light source. The model is based on the particle-in-cell plus Monte Carlo approach. The photoelectric effect and ionization by electron collisions are included. The time evolution of the low density argon plasma is simulated during and after the EUV pulse and the ion-induced sputtering of the coating material of a normal incidence collector mirror is computed. The relation between the time and position at which the ions are created and their final energy is studied, revealing how the evolution and the properties of the sheath influence the amount of sputtered material. The influence of the gas pressure and the source intensity is studied, evaluating the behavior of Ar{sup +} and Ar{sup 2+} ions. A way to reduce the damage to the collector mirror is presented.

  13. Reflective electron-beam lithography performance for the 10nm logic node

    NASA Astrophysics Data System (ADS)

    Freed, Regina; Gubiotti, Thomas; Sun, Jeff; Cheung, Anthony; Yang, Jason; McCord, Mark; Petric, Paul; Carroll, Allen; Ummethala, Upendra; Hale, Layton; Hench, John; Kojima, Shinichi; Mieher, Walter; Bevis, Chris F.

    2012-11-01

    Maskless electron beam lithography has the potential to extend semiconductor manufacturing to the sub-10 nm technology node. KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL) for high-volume 10 nm logic (16 nm HP). This paper reviews progress in the development of the REBL system towards its goal of 100 wph throughput for High Volume Lithography (HVL) at the 2X and 1X nm nodes. In this paper we introduce the Digital Pattern Generator (DPG) with integrated CMOS and MEMs lenslets that was manufactured at TSMC and IMEC. For REBL, the DPG is integrated to KLA-Tencor pattern generating software that can be programmed to produce complex, gray-scaled lithography patterns. Additionally, we show printing results for a range of interesting lithography patterns using Time Domain Imaging (TDI). Previously, KLA-Tencor reported on the development of a Reflective Electron Beam Lithography (REBL) tool for maskless lithography at and below the 22 nm technology node1. Since that time, the REBL team and its partners (TSMC, IMEC) have made good progress towards developing the REBL system and Digital Pattern Generator (DPG) for direct write lithography. Traditionally, e-beam direct write lithography has been too slow for most lithography applications. Ebeam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the continued uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for HVL.

  14. Arrays of metallic micro-/nano-structures by means of colloidal lithography and laser dewetting

    NASA Astrophysics Data System (ADS)

    Constantinescu, C.; Deepak, K. L. N.; Delaporte, P.; Utéza, O.; Grojo, D.

    2016-06-01

    Long-range arrays of prismatoid metal nanostructures are fabricated by a hybrid methodology, i.e. using Langmuir microsphere films and laser-assisted dewetting. As the initial step, we use colloidal lithography. Monolayers of 1-5 μm polystyrene microspheres covered with a thermally evaporated Ag or Au thin film of controlled thickness (5-50 nm) are then used as masks to pattern the surface of quartz, BK7 glass or silicon substrates, typically in the order of cm2. When removing the spheres by physico-chemical means (ultrasound bath and solvent wash), the resulting surface shows an array of nm-size prismatoid structures (Fischer patterns), that can be further processed by laser. Thus, by using two different lasers (355-nm wavelength, 50-ps duration and 193-nm wavelength, 15-ns duration) for the metal dewetting, we control the shape of the deposited nanostructures. A detailed study is presented here on the reshaping of such metal structures through laser annealing. This new hybrid methodology expands the panel of microsphere-assisted technologies employed in preparing surface nanomaterials.

  15. A reliable higher power ArF laser with advanced functionality for immersion lithography

    NASA Astrophysics Data System (ADS)

    Kurosu, Akihiko; Nakano, Masaki; Yashiro, Masanori; Yoshino, Masaya; Tsushima, Hiroaki; Masuda, Hiroyuki; Kumazaki, Takahito; Matsumoto, Shinichi; Kakizaki, Kouji; Matsunaga, Takashi; Okazaki, Shinji; Fujimoto, Junichi; Mizoguchi, Hakaru

    2012-03-01

    193nm ArF eximer lasers are expected to continue to be the main solution in photolithography, since advanced lithography tecnologies such as Multiple patterning and Self-aligned double patterning (SADP) are being developed. In order to appliy these tecnologies to high-volume semiconductor manufactureing, the key is to contain chip manufactureing costs. Therefore, improvement on Reliability, Availability and Maintainability of ArF excimer lasers is important.[1] We works on improving productivity and reducing downtime of ArF exmer lasers, which leads to Reliability, Availability and Maintainability improvemnet. First in this paper, our focus drilling tecnique, which increases depth of focus (DoF) by spectral bandwidth tuning is introdueced. This focus drilling enables to increase DoF for isolated contact holes. and it not degrades the wafer stage speed.[2] Second, a technique which eables to reduce gas refill time to zero is introduced. This technique reduces downtime so Availavility is expected to improve. In this paper, we report these tecniques by using simulation resutls and partially experimental resutls provided by a semiconductor manufacturer.

  16. Shadowing effect modeling and compensation for EUV lithography

    NASA Astrophysics Data System (ADS)

    Song, Hua; Zavyalova, Lena; Su, Irene; Shiely, James; Schmoeller, Thomas

    2011-04-01

    Extreme ultraviolet (EUV) lithography is one of the leading technologies for 16nm and smaller node device patterning. One patterning issue intrinsic to EUV lithography is the shadowing effect due to oblique illumination at the mask and mask absorber thickness. This effect can cause CD errors up to a few nanometers, consequently needs to be accounted for in OPC modeling and compensated accordingly in mask synthesis. Because of the dependence on the reticle field coordinates, shadowing effect is very different from the traditional optical and resist effects. It poses challenges to modeling, compensation, and verification that were not encountered in tradition optical lithography mask synthesis. In this paper, we present a systematic approach for shadowing effect modeling and model-based shadowing compensation. Edge based shadowing effect calculation with reticle and scan information is presented. Model calibration and mask synthesis flows are described. Numerical experiments are performed to demonstrate the effectiveness of the approach.

  17. Metallic resist for phase-change lithography

    PubMed Central

    Zeng, Bi Jian; Huang, Jun Zhu; Ni, Ri Wen; Yu, Nian Nian; Wei, Wei; Hu, Yang Zhi; Li, Zhen; Miao, Xiang Shui

    2014-01-01

    Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-change lithography, which uses semiconductor-based resists such as chalcogenide Ge2Sb2Te5 films, was developed to overcome these limitations. Here, instead of chalcogenide, we propose a metallic resist composed of Mg58Cu29Y13 alloy films, which exhibits a considerable difference in etching rate between amorphous and crystalline states. Furthermore, the heat distribution in Mg58Cu29Y13 thin film is better and can be more easily controlled than that in Ge2Sb2Te5 during exposure. We succeeded in fabricating both continuous and discrete patterns on Mg58Cu29Y13 thin films via laser irradiation and wet etching. Our results demonstrate that a metallic resist of Mg58Cu29Y13 is suitable for phase change lithography, and this type of resist has potential due to its outstanding characteristics. PMID:24931505

  18. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect

    Zhang, Yonghui; Wei, Tongbo Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  19. Mix-and-match lithography for half-micron technology

    NASA Astrophysics Data System (ADS)

    Flack, Warren W.; Dameron, David H.

    1991-08-01

    Half-micron lithography for a production environment is not considered realistic with currently available lithography tools. While optical steppers have high wafer throughputs, they do not have sufficient process latitude at half-micron geometries. In contrast, advanced technologies with sufficient capabilities for half-micron processing such as direct-write e-beam and x-ray lithography are extremely expensive and have low effective throughputs. A mix-and- match lithography approach can take advantage of the best features of both types of systems by sing an optical stepper for noncritical levels and an advanced lithography system for critical levels. In order to facilitate processing of a triple level metal half-micron CMOS technology, a mix-and-match scheme has been developed between a Hitachi HL-700 D e-beam direct write system and an Ultratech 1500 wide-field 1x stepper. The Hitachi is used to pattern an accurate zero or registration level. All critical levels are exposed on the Hitachi and aligned back to this zero level. The Ultratech is used to align all other process levels which do not have critical targets that are placed on subsequent process levels. The mix-and-match approach is discussed, and optical to e-beam as well as e-beam to optical alignment results from seven production lots are presented. The linear alignment error components X translation, Y translation, rotation and magnification are extracted and analyzed to determine their source. It was found that a simple adjustment improved the registration capabilities of these two lithography tools by reducing the X translation, Y translation and rotation standard deviations by a factor of two or more, while greatly reducing the magnification errors between the two tools.

  20. Nanometer x-ray lithography

    NASA Astrophysics Data System (ADS)

    Hartley, Frank T.; Khan Malek, Chantal G.

    1999-10-01

    New developments for x-ray nanomachining include pattern transfer onto non-planar surfaces coated with electrodeposited resists using synchrotron radiation x-rays through extremely high-resolution mask made by chemically assisted focused ion beam lithography. Standard UV photolithographic processes cannot maintain sub-micron definitions over large variation in feature topography. The ability of x-ray printing to pattern thin or thick layers of photoresist with high resolution on non-planar surfaces of large and complex topographies with limited diffraction and scattering effects and no substrate reflection is known and can be exploited for patterning microsystems with non-planar 3D geometries as well as multisided and multilayered substrates. Thin conformal coatings of electro-deposited positive and negative tone photoresist have been shown to be x-ray sensitive and accommodate sub-micro pattern transfer over surface of extreme topographical variations. Chemically assisted focused ion beam selective anisotropic erosion was used to fabricate x-ray masks directly. Masks with feature sizes less than 20 nm through 7 microns of gold were made on bulk silicon substrates and x-ray mask membranes. The technique is also applicable to other high density materials. Such masks enable the primary and secondary patterning and/or 3D machining of Nano-Electro-Mechanical Systems over large depths or complex relief and the patterning of large surface areas with sub-optically dimensioned features.

  1. Nanoimprint lithography: an enabling technology for nanophotonics

    NASA Astrophysics Data System (ADS)

    Yao, Yuhan; Liu, He; Wang, Yifei; Li, Yuanrui; Song, Boxiang; Bratkovsk, Alexandre; Wang, Shih-Yuan; Wu, Wei

    2015-11-01

    Nanoimprint lithography (NIL) is an indispensable tool to realize a fast and accurate nanoscale patterning in nanophotonics due to high resolution and high yield. The number of publication on NIL has increased from less than a hundred per year to over three thousand per year. In this paper, the most recent developments on NIL patterning transfer processes and its applications on nanophotonics are discussed and reviewed. NIL has been opening up new opportunities for nanophotonics, especially in fabricating optical meta-materials. With more researches on this low-cost high-throughput fabrication technology, we should anticipate a brighter future for nanophotonics and NIL.

  2. New measuring technique of complex index of immersion liquids

    NASA Astrophysics Data System (ADS)

    Stehlé, Jean-Louis; Piel, Jean-Philippe; Campillo-Carreto, Jose

    2006-03-01

    The next nodes in immersion lithography will require to use the 193 nm laser line with very large numerical aperture and a liquid between the optics and the resist1. Immersion lithography at 193 nm requests very specific parameters for the fluid. The first generation will use the De-Ionized Water (DIW) very pure and not recycled, but when a new optical material for last lens will be available with a refractive index (RI) larger than 1.85, a higher refractive index fluid can be used, enabling second and maybe third generation of immersion lithography at 193 nm. So the 45 and maybe the 32 nm nodes could be covered with this High Index Fluids (HIF).

  3. Programmable imprint lithography template

    DOEpatents

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  4. Method for maskless lithography

    DOEpatents

    Sweatt, William C.; Stulen, Richard H.

    2000-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  5. Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography

    SciTech Connect

    Zhang, Yonghui; Wei, Tongbo Xiong, Zhuo; Chen, Yu; Zhen, Aigong; Shan, Liang; Zhao, Yun; Hu, Qiang; Li, Jinmin; Wang, Junxi

    2014-11-21

    In this study, the multiple-exposure nanosphere-lens lithography method utilizing the polystyrene nanospheres with focusing behavior is investigated and introduced to fabricate diverse photonic crystals (PCs) on indium tin oxide to enhance the optical output power of GaN-based light-emitting diode (LED). Simulated results indicate that the focused light intensity decreases with increasing tilted angle due to the shadow effect introduced by adjacent nanospheres. The fill factor of nanopattern is tunable by controlling tilted angles and exposure times. To attain quadruple PC without overlapping patterns, mathematical calculation model is used to define the optimum range of tilted angles. Angular emission patterns and three-dimensional finite-difference time domain simulated results indicate that the enhanced light extraction of PC LEDs results mainly from diffused scattering effects, and the diffraction effects of PC on light extracted efficiency increase with the increase of fill factor. Furthermore, it is confirmed that the multiple PC can extract more light from GaN into air than common PC with same period and fill factor.

  6. Combined overlay, focus and CD metrology for leading edge lithography

    NASA Astrophysics Data System (ADS)

    Ebert, Martin; Cramer, Hugo; Tel, Wim; Kubis, Michael; Megens, Henry

    2011-04-01

    and Focus measurements respectively. In addition CD profile information can be measured enabling proximity matching applications. By using a technique [2][3][4] to de-convolve dose and focus based on the profile measurement of a well-characterized process monitor target, we show that the dose and focus signature of a high NA 193nm immersion scanner can be effectively measured and corrected. A similar approach was also taken to address overlay errors using the diffraction based overlay capability [5] of the same metrology tool. We demonstrate the advantage of having a single metrology tool solution, which enables us to reduce dose, focus and overlay variability to their minimum non-correctable signatures. This technique makes use of the high accuracy and repeatability of the YieldStar tool and provides a common reference of scanner setup and user process. Using ASML's YieldStar in combination with ASML scanners, and control solutions allows for a direct link from the metrology tool to the system settings, ensuring that the appropriate system settings can be easily and directly updated.

  7. Zone-plate-array lithography (ZPL): a maskless fast-turn-around system for microoptic device fabrication

    NASA Astrophysics Data System (ADS)

    Menon, Rajesh; Gil, Dario; Carter, David J. D.; Patel, Amil; Smith, Henry I.

    2003-01-01

    Ever-increasing demands of smaller feature sizes and larger throughputs have catapulted the semicondutor lithography juggernaut to develop immensely complex and expensive systems. However, it is not clear if the lithography needs for microoptic and other "botique" device fabrication are being addressed. ZPAL is a new nanolithography technique which leverages advances in micromechanics and diffractive optics technologies. We present ZPAL as the ideal system for such non-conventional lithography needs.

  8. Overview of Lithography: Challenges and Metrologies

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    2003-09-01

    Semiconductor microlithography is rapidly reaching a point where it becomes exceedingly difficult to shrink features at historical rates. We will no longer be able to increase process windows by going to shorter wavelengths with optical lithography, because we are running out of useable wavelengths. This necessitates either the implementation of processes with very small process windows or a transition to radically new types of lithographic technologies. Either situation presents numerous challenges to lithographers and metrologists. Particularly daunting are the requirements for gate linewidth control for microprocessors. Reducing variation requires improvement in the components of variation, each of which must be smaller than the total result. In order to improve a particular parameter, such as CD variation, metrology must be adequate for identifying improvements in the components of that parameter, not just the total. This places very tight requirements on metrology capability. Departing from optical lithography into the Brave New World of Next Generation Lithography will necessitate new metrology capabilities in several areas, not just the measurement of features on wafers. Creating the capabilities that will be needed in the future requires that funding be available for the requisite development. The need for huge amounts of funding to develop new lithographic technologies will likely necessitate a slowing down in the pace at which we shrink features. It is absolutely essential that a balance is re-established between the prices that purchasers of chips are willing to pay and chip development and manufacturing costs. This will be very challenging with 300 mm wafer fabs coming on-line, since low chip prices have historically been associated with overcapacity in the semiconductor industry, and it is anticipated that new lithographic technologies will be very expensive.

  9. Receding contact lines: From sliding drops to immersion lithography

    NASA Astrophysics Data System (ADS)

    Winkels, K. G.; Peters, I. R.; Evangelista, F.; Riepen, M.; Daerr, A.; Limat, L.; Snoeijer, J. H.

    2011-02-01

    Instabilities of receding contact lines often occur through the formation of a corner with a very sharp tip. These dewetting structures also appear in the technology of Immersion Lithography, where water is put between the lens and the silicon wafer to increase the optical resolution. In this paper we aim to compare corners appearing in Immersion Lithography to those at the tail of gravity driven-drops sliding down an incline. We use high speed recordings to measure the dynamic contact angle and the sharpness of the corner, for varying contact line velocity. It is found that these quantities behave very similarly for Immersion Lithography and drops on an incline. In addition, the results agree well with predictions by a lubrication model for cornered contact lines, hinting at a generic structure of dewetting corners.

  10. Design and fabrication of diverse metamaterial structures by holographic lithography.

    PubMed

    Yang, Yi; Li, Qiuze; Wang, Guo Ping

    2008-07-21

    We demonstrate a holographic lithography for the fabrication of diverse metamaterial structures by using an optical prism. Cylindrical nanoshells, U-shaped resonator arrays, and double-split ring arrays are obtained experimentally by real time modulating the phase relation of the interference beams. This easy-to-use method may provide a roadway for the design and fabrication of future metamaterials requiring diverse structures for effectively manipulating electromagnetic properties at optical frequencies. PMID:18648445

  11. Nanometer-scale placement in electron-beam lithography

    NASA Astrophysics Data System (ADS)

    Ferrera, Juan

    2000-12-01

    Electron-beam lithography is capable of high-resolution lithographic pattern generation (down to 10 nm or below). However, for conventional e-beam lithography, pattern- placement accuracy is inferior to resolution. Despite significant efforts to improve pattern placement, a limit is being approached. The placement capability of conventional e-beam tools is insufficient to fabricate narrow-band optical filters and lasers, which require sub-micrometer-pitch gratings with a high degree of spatial coherence. Moreover, it is widely recognized that placement accuracy will not be sufficient for future semiconductor device generations, with minimum feature sizes below 100 nm. In electron-beam lithography, an electromagnetic deflection system is used in conjunction with a laser-interferometer-controlled stage to generate high-resolution patterns over large areas. Placement errors arise because the laser interferometer monitors the stage position, but the e-beam can independently drift relative to the stage. Moreover, the laser interferometer can itself drift during exposure. To overcome this fundamental limitation, the method of spatial phase-locked electron-beam lithography has been proposed. The beam position is referenced to a high- fidelity grid, exposed by interference lithography, on the substrate surface. In this method, pattern-placement performance depends upon the accuracy of the reference grid and the precision with which patterns can be locked to the grid. The grid must be well characterized to serve as a reliable fiducial. This document describes work done to characterize grids generated by interference lithography. A theoretical model was developed to describe the spatial-phase progression of interferometric gratings and grids. The accuracy of the interference lithography apparatus was found to be limited by substrate mounting errors and uncertainty in setting the geometrical parameters that determine the angle of interference. Experimental measurements were

  12. Soft Lithography Using Nectar Droplets.

    PubMed

    Biswas, Saheli; Chakrabarti, Aditi; Chateauminois, Antoine; Wandersman, Elie; Prevost, Alexis M; Chaudhury, Manoj K

    2015-12-01

    In spite of significant advances in replication technologies, methods to produce well-defined three-dimensional structures are still at its infancy. Such a limitation would be evident if we were to produce a large array of simple and, especially, compound convex lenses, also guaranteeing that their surfaces would be molecularly smooth. Here, we report a novel method to produce such structures by cloning the 3D shape of nectar drops, found widely in nature, using conventional soft lithography.The elementary process involves transfer of a thin patch of the sugar solution coated on a glass slide onto a hydrophobic substrate on which this patch evolves into a microdroplet. Upon the absorption of water vapor, such a microdroplet grows linearly with time, and its final size can be controlled by varying its exposure time to water vapor. At any stage of the evolution of the size of the drop, its shape can be cloned onto a soft elastomer by following the well-known methods of molding and cross-linking the same. A unique new science that emerges in our attempt to understand the transfer of the sugar patch and its evolution to a spherical drop is the elucidation of the mechanics underlying the contact of a deformable sphere against a solid support intervening a thin liquid film. A unique aspect of this work is to demonstrate that higher level structures can also be generated by transferring even smaller nucleation sites on the surface of the primary lenses and then allowing them to grow by absorption of water vapor. What results at the end is either a well-controlled distribution of smooth hemispherical lenses or compound structures that could have potential applications in the fundamental studies of contact mechanics, wettability, and even in optics. PMID:26563988

  13. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  14. Design and fabrication of electrostatic microcolumn in multiple electron-beam lithography

    NASA Astrophysics Data System (ADS)

    Du, Zhidong; Wen, Ye; Traverso, Luis; Datta, Anurup; Chen, Chen; Xu, Xianfan; Pan, Liang

    2016-03-01

    Microcolumns are widely used for parallel electron-beam lithography because of their compactness and the ability to achieve high spatial resolution. A design of an electrostatic microcolumn for our recent nanoscale photoemission sources is presented. We proposed a compact column structure (as short as several microns in length) for the ease of microcolumn fabrication and lithography operation. We numerically studied the influence of several design parameters on the optical performance such as microcolumn diameter, electrode thickness, beam current, working voltages, and working distance. We also examined the effect of fringing field between adjacent microcolumns during parallel lithography operations. The microcolumns were also fabricated to show the possibility.

  15. Design of electrostatic microcolumn for nanoscale photoemission source in massively parallel electron-beam lithography

    NASA Astrophysics Data System (ADS)

    Wen, Ye; Du, Zhidong; Pan, Liang

    2015-10-01

    Microcolumns are widely used for parallel electron-beam lithography because of their compactness and the ability to achieve high spatial resolution. A design of an electrostatic microcolumn for our recent nanoscale photoemission sources is presented. We proposed a compact column structure (as short as several microns in length) for the ease of microcolumn fabrication and lithography operation. We numerically studied the influence of several design parameters on the optical performance such as microcolumn diameter, electrode thickness, beam current, working voltages, and working distance. We also examined the effect of fringing field between adjacent microcolumns during parallel lithography operations.

  16. Mask and lithography techniques for FPD

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Wahlsten, M.; Sundelin, E.; Hansson, G.; Svensson, A.

    2015-09-01

    Large-field projection lithography for FPDs has developed gradually since the 90s. The LCD screen technology has remained largely unchanged and incremental development has given us better image quality, larger screen sizes, and above all lower cost per area. Recently new types of mobile devices with very high pixel density and/or OLED displays have given rise to dramatically higher requirem ents on photomask technology. Devices with 600 ppi or m ore need lithography with higher optical resolution and better linewidth control. OLED di splays pose new challenges with high sensitivity to transistor parameters and to capacitive cross-talk. New mask requirements leads to new maskwriter requirements and Mycronic has developed a new generation of large -area mask writers with significantly improved properties. This paper discusses and shows data for the improved writers. Mask production to high er quality stan dards also need metrology to verify the quality and Mycronic has introduced a 2D metrology tool with accuracy adequate for current and future masks. New printing or additive methods of producing disp lays on plastic or metal foil will make low-cost disp lays available. This inexpensive type of disp lays will exist side by side with the photographic quality displays of TVs and mobile devices, which will continue to be a challenge in terms of mask and production quality.

  17. Inverse lithography technique for advanced CMOS nodes

    NASA Astrophysics Data System (ADS)

    Villaret, Alexandre; Tritchkov, Alexander; Entradas, Jorge; Yesilada, Emek

    2013-04-01

    Resolution Enhancement Techniques have continuously improved over the last decade, driven by the ever growing constraints of lithography process. Despite the large number of RET applied, some hotspot configurations remain challenging for advanced nodes due to aggressive design rules. Inverse Lithography Technique (ILT) is evaluated here as a substitute to the dense OPC baseline. Indeed ILT has been known for several years for its near-to-ideal mask quality, while also being potentially more time consuming in terms of OPC run and mask processing. We chose to evaluate Mentor Graphics' ILT engine "pxOPCTM" on both lines and via hotspot configurations. These hotspots were extracted from real 28nm test cases where the dense OPC solution is not satisfactory. For both layer types, the reference OPC consists of a dense OPC engine coupled to rule-based and/or model-based assist generation method. The same CM1 model is used for the reference and the ILT OPC. ILT quality improvement is presented through Optical Rule Check (ORC) results with various adequate detectors. Several mask manufacturing rule constraints (MRC) are considered for the ILT solution and their impact on process ability is checked after mask processing. A hybrid OPC approach allowing localized ILT usage is presented in order to optimize both quality and runtime. A real mask is prepared and fabricated with this method. Finally, results analyzed on silicon are presented to compare localized ILT to reference dense OPC.

  18. Polymer nanofibers by soft lithography

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Maruccio, Giuseppe; Mele, Elisa; Persano, Luana; Di Benedetto, Francesca; Cingolani, Roberto

    2005-09-01

    The fabrication of polymeric fibers by soft lithography is demonstrated. Polyurethane, patterned by capillarity-induced molding with high-resolution elastomeric templates, forms mm-long fibers with a diameter below 0.3μm. The Young's modulus of the fabricated structures, evaluated by force-distance scanning probe spectroscopy, has a value of 0.8MPa. This is an excellent example of nanostructures feasible by the combination of soft nanopatterning and high-resolution fabrication approaches for master templates, and particularly electron-beam lithography.

  19. Porphyrin-Based Photocatalytic Lithography

    SciTech Connect

    Bearinger, J; Stone, G; Christian, A; Dugan, L; Hiddessen, A; Wu, K J; Wu, L; Hamilton, J; Stockton, C; Hubbell, J

    2007-10-15

    Photocatalytic lithography is an emerging technique that couples light with coated mask materials in order to pattern surface chemistry. We excite porphyrins to create radical species that photocatalytically oxidize, and thereby pattern, chemistries in the local vicinity. The technique advantageously does not necessitate mass transport or specified substrates, it is fast and robust and the wavelength of light does not limit the resolution of patterned features. We have patterned proteins and cells in order to demonstrate the utility of photocatalytic lithography in life science applications.

  20. Improved near field lithography by surface plasmon resonance in groove-patterned masks

    NASA Astrophysics Data System (ADS)

    Zeng, Beibei; Pan, Li; Liu, Ling; Fang, Liang; Wang, Changtao; Luo, Xiangang

    2009-12-01

    Near field lithography (NFL) provides an effective way for obtaining lithography features' sizes far beyond the diffraction limit. However, optical transmission through isolated subwavelength apertures is very low in the lithography process. It also makes it difficult to obtain a uniform lithography pattern where isolated and arrayed slit structures coexist because of different optical transmission through these two kinds of structures. It is proposed in this paper that using appropriately designed groove structures around subwavelength metallic slits could solve this problem. Numerical calculations performed by the finite-difference time-domain (FDTD) method demonstrate that about ten times transmission enhancement could be obtained. This occurs as a surface plasmon is resonantly excited and light is concentrated into nanometer scale apertures, resulting in not only greatly enhanced NFL efficiency but also uniform distribution of light intensity for isolated and arrayed slit patterns. Also discussed is the enhancement dependence on the structural parameters of NFL masks.

  1. Novel electrostatic column for ion projection lithography

    SciTech Connect

    Chalupka, A.; Stengl, G.; Buschbeck, H.; Lammer, G.; Vonach, H.; Fischer, R.; Hammel, E.; Loeschner, H.; Nowak, R.; Wolf, P. ); Finkelstein, W.; Hill, R.W. ); Berry, I.L. ); Harriott, L.R. ); Melngailis, J. ); Randall, J.N. ); Wolfe, J.C. ); Stroh, H.; Wollnik, H. ); Mondelli, A.A.; Petillo, J.J. ); Leung, K. (Lawrence Berkeley Laboratory, University of Californi

    1994-11-01

    Ion projection lithography (IPL) is being considered for high volume sub-0.25-[mu]m lithography. A novel ion-optical column has been designed for exposing 20[times]20 mm[sup 2] fields at 3[times] reduction from stencil mask to wafer substrates. A diverging lens is realized by using the stencil mask as the first electrode of the ion-optical column. The second and third electrode form an accelerating field lens. The aberrations of the first two lenses (diverging lens and field lens) are compensated by an asymmetric Einzel lens projecting an ion image of the stencil mask openings onto the wafer substrate with better than 2 mrad telecentricity. Less than 30 nm intrafield distortion was calculated within 20[times]20 mm[sup 2] exposure fields. The calculation uncertainty is estimated to be about 10 nm. The calculation holds for helium ions with [approx]10 keV ion energy at the stencil mask and 150 keV ion energy at the wafer plane. A virtual ion source size of 10 [mu]m has been assumed. The calculated chromatic aberrations are less than 60 nm, assuming 6 eV energy spread of the ions extracted from a duoplasmatron source. Recently a multicusp ion source has been developed for which preliminary results indicate an energy spread of less than 2 eV. Thus, with a multicusp source chromatic aberrations of less than 20 nm are to be expected. The ion energy at the crossover between the field lens and the asymmetric Einzel lens is 200 keV. Therefore, stochastic space charge induced degradations in resolution can be kept sufficiently low. The divergence of the ion image projected to the wafer plane is less than 2 mrad. Thus, the usable'' depth of focus for the novel ion optics is in the order of 10 [mu]m.

  2. Microfabrication using soft lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Xiao-Mei

    Soft Lithography is a group of non-photolithographic techniques currently being explored in our group. Four such techniques-microcontact printing (μCP), replica molding (REM), micromolding in capillaries (MIMIC), and microtransfer molding (μTM)-have been demonstrated for fabricating micro- and nanostructures of a variety of materials with dimension >=30 nm. Part I (Chapters 1-5) reviews several aspects of the three molding techniques REM, MIMIC, and μTM. Chapters 1-3 describe μTM and MIMIC, and the use of these techniques in the fabrication of functional devices. μTM is capable of generating μm-scale structures over large areas, on both planar and contoured surfaces, and is able to make 3-dimensional structures layer by layer. The capability of μTM and MIMIC has been demonstrated in the fabrication of single-mode waveguides, waveguide couplers and interferometers. The coupling between waveguides can be tailored by waveguide spacing or the differential in curing time between the waveguides and the cladding. Chapters 4-5 demonstrate the combination of REM and shrinkable polystyrene (PS) films to reduce the feature size of microstructures and to generate microstructures with high aspect ratios on both planar and curved surfaces. A shrinkable PS film is patterned with relief structures, and then heated and shrinks. Thermal shrinkage results in a 100-fold increase in the aspect ratio of the patterned microstructures in the PS film. The microstructures in the shrunken PS films can be transferred to many other materials by REM. Part II (Chapters 6-7) focuses on two issues in the microfabrication using self-assembled monolayers (SAMs) as ultrathin resists. Chapter 6 describes a selective etching solution for transferring patterns of SAMs of alkanethiolates into the underlying layers (e.g., gold, silver, and copper). This etching solution uses thiosulfate as the ligand that coordinates to the metal ions, and ferricyanide as the oxidant. It has been demonstrated to be

  3. Layered nano-gratings by electron beam writing to form 3-level diffractive optical elements for 3D phase-offset holographic lithography.

    PubMed

    Yuan, Liang Leon; Herman, Peter R

    2015-12-21

    A multi-level nanophotonic structure is a major goal in providing advanced optical functionalities as found in photonic crystals and metamaterials. A three-level nano-grating phase mask has been fabricated in an electron-beam resist (ma-N) to meet the requirement of holographic generation of a diamond-like 3D nanostructure in photoresist by a single exposure step. A 2D mask with 600 nm periodicity is presented for generating first order diffracted beams with a preferred π/2 phase shift on the X- and Y-axes and with sufficient 1(st) order diffraction efficiency of 3.5% at 800 nm wavelength for creating a 3D periodic nanostructure in SU-8 photoresist. The resulting 3D structure is anticipated to provide an 8% complete photonic band gap (PBG) upon silicon inversion. A thin SiO2 layer was used to isolate the grating layers and multiple spin-coating steps served to planarize the final resist layer. A reversible soft coating (aquaSAVE) was introduced to enable SEM inspection and verification of each insulating grating layer. This e-beam lithographic method is extensible to assembling multiple layers of a nanophotonic structure.

  4. Fine pitch grids for an x-ray solar imaging spectrometer fabricated by optical lithography and XeF2 etching

    NASA Astrophysics Data System (ADS)

    Brennen, Reid A.; Hecht, Michael H.; Wiberg, Dean V.; Manion, Steven; Bonivert, William D.; Hruby, Jill M.; Pister, Kristofer S. J.; Kruglick, Ezekiel J.

    1995-09-01

    We have developed fine pitch, sub-collimating X-ray grids for an instrument in the High Energy Solar Spectroscopic Imager (HESSI), a proposed NASA mission. In addition to high- energy X-rays, the instrument requires collimation of photons with energies of less than 4 keV such that free-standing grids are required that have no material between the grid slats. We have fabricated 25 micrometer thick gold grids that can collimate photons from visible light up to 30 keV X-rays. They are 55 millimeters in diameter and have 200 micrometer thick silicon support structures. The fabrication process starts with 200 micrometer thick 3 inch wafers onto which a 50 angstrom chrome, 300 angstrom gold electroplating strike is e-beam evaporated. A 25 micrometer thick optical resist is deposited on the wafers using a low spin rate. The resist is exposed and developed and an oxygen plasma clean is performed to fully strip resist residue from the strike. 25 micrometers of gold is then plated in the resist mold, resulting in a gold grid with photoresist between each gold slat. The wafer is turned over and a 50 micrometer dry resist is patterned such that it has a array of 1 by 4 millimeter openings to the silicon. The silicon is etched through to the chrome/gold strike using a xenon difluoride etching process. Both types of photoresist are removed with acetone followed by a piranha clean and the chrome/gold strike is removed with a hydrochloric acid and hydrogen peroxide chrome etch which also slowly etches gold.

  5. Graphic Arts/Offset Lithography.

    ERIC Educational Resources Information Center

    Hoisington, James; Metcalf, Joseph

    This revised curriculum for graphic arts is designed to provide secondary and postsecondary students with entry-level skills and an understanding of current printing technology. It contains lesson plans based on entry-level competencies for offset lithography as identified by educators and industry representatives. The guide is divided into 15…

  6. Biomolecular Patterning via Photocatalytic Lithography

    SciTech Connect

    Bearinger, J P; Hiddessen, A L; Wu, K J; Christian, A T; Dugan, L C; Stone, G; Camarero, J; Hinz, A K; Hubbell, J A

    2005-02-18

    We have developed a novel method for patterning surface chemistry: Photocatalytic Lithography. This technique relies on inexpensive stamp materials and light; it does not necessitate mass transport or specified substrates, and the wavelength of light should not limit feature resolution. We have demonstrated the utility of this technique through the patterning of proteins, single cells and bacteria.

  7. High resolution patterning for flexible electronics via roll-to-roll nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Sabik, Sami; de Riet, Joris; Yakimets, Iryna; Smits, Edsger

    2014-03-01

    Flexible electronics is a growing field and is currently maturing in applications such as displays, smart packaging, organic light-emitting diodes and organic photovoltaic cells. In order to process on flexible substrates at high throughput and large areas, novel patterning techniques will be essential. Conventional optical lithography is limited in throughput as well as resolution, and requires several alignment steps to generate multi-layered patterns, required for applications such as thin-film transistors. It therefore remains a complex and expensive process. Nanoimprint lithography is an emerging alternative to optical lithography, demonstrating patterning capabilities over a wide range of resolutions, from several microns down to a few nanometres. For display applications, nanoimprint lithography can be used to pattern various layers. Micron sized thin-film transistors for backplane can be fabricated where a self-aligned geometry is used to decrease the number of alignment steps, and increase the overlay accuracy. In addition, nano-structures can be used for optical applications such as anti-reflective surfaces and nano patterned transparent electrodes. Imprint lithography is a fully roll-to-roll compatible process and enables large area and high throughput fabrication for flexible electronics. In this paper we discuss the possibilities and the challenges of large area patterning by roll-to-roll nanoimprint lithography, reviewing micron and nano sized structures realized on our roll-to-roll equipment. Nano patterned transparent electrodes, moth-eye antireflective coatings, and multilevel structures will be covered.

  8. XUV free-electron laser-based projection lithography systems

    SciTech Connect

    Newnam, B.E.

    1990-01-01

    Free-electron laser sources, driven by rf-linear accelerators, have the potential to operate in the extreme ultraviolet (XUV) spectral range with more than sufficient average power for high-volume projection lithography. For XUV wavelengths from 100 nm to 4 nm, such sources will enable the resolution limit of optical projection lithography to be extended from 0.25 {mu}m to 0.05{mu}m and with an adequate total depth of focus (1 to 2 {mu}m). Recent developments of a photoinjector of very bright electron beams, high-precision magnetic undulators, and ring-resonator cavities raise our confidence that FEL operation below 100 nm is ready for prototype demonstration. We address the motivation for an XUV FEL source for commercial microcircuit production and its integration into a lithographic system, include reflecting reduction masks, reflecting XUV projection optics and alignment systems, and surface-imaging photoresists. 52 refs., 7 figs.

  9. Enabling quantitative optical imaging for in-die-capable critical dimension targets

    NASA Astrophysics Data System (ADS)

    Barnes, B. M.; Henn, M.-A.; Sohn, M. Y.; Zhou, H.; Silver, R. M.

    2016-03-01

    Dimensional scaling trends will eventually bring semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address the measurement and variability for these CDs using sufficiently small in-die metrology targets. Recently, Qin et al. [Light Sci Appl, 5, e16038 (2016)] demonstrated quantitative modelbased measurements of finite sets of lines with features as small as 16 nm using 450 nm wavelength light. This paper uses simulation studies, augmented with experiments at 193 nm wavelength, to adapt and optimize the finite sets of features that work as in-die-capable metrology targets with minimal increases in parametric uncertainty. A finite element based solver for time-harmonic Maxwell's equations yields two- and three-dimensional simulations of the electromagnetic scattering for optimizing the design of such targets as functions of reduced line lengths, fewer number of lines, fewer focal positions, smaller critical dimensions, and shorter illumination wavelength. Metrology targets that exceeded performance requirements are as short as 3 μm for 193 nm light, feature as few as eight lines, and are extensible to sub-10 nm CDs. Target areas measured at 193 nm can be fifteen times smaller in area than current state-of-the-art scatterometry targets described in the literature. This new methodology is demonstrated to be a promising alternative for optical model-based in-die CD metrology.

  10. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  11. Resist materials for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Toriumi, Minoru; Ishikawa, Seiichi; Miyoshi, Seiro; Naito, Takuya; Yamazaki, Tamio; Watanabe, Manabu; Itani, Toshiro

    2001-08-01

    Fluoropolymers are key materials for single layer resists of 157nm lithography. We have been studying fluoropolymers to identify their potential for base resins of 157nm photoresist. Many fluoropolymers showed high optical transparencies, with absorption coefficients of 0.01micrometers -1 to 2micrometers -1 at 157nm, and dry- etching resistance comparable to an ArF resist, and non- swelling solubility in the standard developer. Positive- tone resists were formulated using fluoropolymers that fulfill practical resist requirements. They showed good sensitivities, from 1 mJ/cm(superscript 2 to 10 mJ/cm2, and contrast in the sensitivity curves. They were able to be patterned using a F2 laser microstepper.

  12. Correcting lithography hot spots during physical-design implementation

    NASA Astrophysics Data System (ADS)

    Luk-Pat, Gerard T.; Miloslavsky, Alexander; Ikeuchi, Atsuhiko; Suzuki, Hiroaki; Kyoh, Suigen; Izuha, Kyoko; Tseng, Frank; Wen, Linni

    2006-10-01

    As the technology node shrinks, printed-wafer shapes show progressively less similarity to the design-layout shapes, even with optical proximity correction (OPC). Design tools have a restricted ability to address this shape infidelity. Their understanding of lithography effects is limited, taking the form of design rules that try to prevent "Hot Spots" - locations that demonstrate wafer-printing problems. These design rules are becoming increasingly complex and therefore less useful in addressing the lithography challenges. Therefore, design tools that have a better understanding of lithography are becoming a necessity for technology nodes of 65 nm and below. The general goal of this work is to correct lithography Hot Spots during physical-design implementation. The specific goal is to automatically fix a majority of the Hot Spots in the Metal 2 layers and above, with a run time on the order of a few hours per layer. Three steps were taken to achieve this goal. First, Hot Spot detection was made faster by using rule-based detection. Second, Hot Spot correction was automated by using rule-based correction. Third, convergence of corrections was avoided by performing correction locally, which means that correcting one Hot Spot was very unlikely to create new Hot Spots.

  13. Technology of alignment mark in electron beam lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Min; Xu, Tang; Chen, Baoqin; Niu, Jiebin

    2014-08-01

    Electron beam direct wring lithography has been an indispensable approach by which all sorts of novel nano-scale devices include many kinds optical devices can be fabricated. Alignment accuracy is a key factor especially to those devices which need multi-level lithography. In addition to electron beam lithography system itself the quality of alignment mark directly influences alignment accuracy. This paper introduces fundamental of alignment mark detection and discusses some techniques of alignment mark fabrication along with considerations for obtaining highly accurate alignment taking JBX5000LS and JBX6300FS e-beam lithography systems for example. The fundamental of alignment mark detection is expounded first. Many kinds of factors which can impact on the quality of alignment mark are analyzed including mark materials, depth of mark groove and influence of multi-channel process. It has been proved from experiments that material used as metal mark with higher average atomic number is better beneficial for getting high alignment accuracy. Depth of mark groove is required to 1.5~5 μm on our experience. The more process steps alignment mark must pass through, the more probability of being damaged there will be. So the compatibility of alignment mark fabrication with the whole device process and the protection of alignment mark are both need to be considered in advance.

  14. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOEpatents

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  15. Controlling linewidth roughness in step and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Schmid, Gerard M.; Khusnatdinov, Niyaz; Brooks, Cynthia B.; LaBrake, Dwayne; Thompson, Ecron; Resnick, Douglas J.; Owens, Jordan; Ford, Arnie; Sasaki, Shiho; Toyama, Nobuhito; Kurihara, Masaaki; Hayashi, Naoya; Kobayashi, Hideo; Sato, Takashi; Nagarekawa, Osamu; Hart, Mark W.; Gopalakrishnan, Kailash; Shenoy, Rohit; Jih, Ron; Zhang, Ying; Sikorski, Edmund; Rothwell, Mary Beth; Yoshitake, Shusuke; Sunaoshi, Hitoshi; Yasui, Kenichi

    2008-04-01

    Despite the remarkable progress made in extending optical lithography to deep sub-wavelength imaging, the limit for the technology seems imminent. At 22nm half pitch design rules, neither very high NA tools (NA 1.6), nor techniques such as double patterning are likely to be sufficient. One of the key challenges in patterning features with these dimensions is the ability to minimize feature roughness while maintaining reasonable process throughput. This limitation is particularly challenging for electron and photon based NGL technologies, where fast chemically amplified resists are used to define the patterned images. Control of linewidth roughness (LWR) is critical, since it adversely affects device speed and timing in CMOS circuits. Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. This technology has been shown to be an effective method for replication of nanometer-scale structures from a template (imprint mask). As a high fidelity replication process, the resolution of imprint lithography is determined by the ability to create a master template having the required dimensions. Although the imprint process itself adds no additional linewidth roughness to the patterning process, the burden of minimizing LWR falls to the template fabrication process. Non chemically amplified resists, such as ZEP520A, are not nearly as sensitive but have excellent resolution and can produce features with very low LWR. The purpose of this paper is to characterize LWR for the entire imprint lithography process, from template fabrication to the final patterned substrate. Three experiments were performed documenting LWR in the template, imprint, and after pattern transfer. On average, LWR was extremely low (less than 3nm, 3σ), and independent of the processing step and feature size.

  16. Linewidth roughness characterization in step and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Schmid, Gerard M.; Khusnatdinov, Niyaz; Brooks, Cynthia B.; LaBrake, Dwayne; Thompson, Ecron; Resnick, Douglas J.

    2008-05-01

    Despite the remarkable progress made in extending optical lithography to deep sub-wavelength imaging, the limit for the technology seems imminent. At 22nm half pitch design rules, neither very high NA tools (NA 1.6), nor techniques such as double patterning are likely to be sufficient. One of the key challenges in patterning features with these dimensions is the ability to minimize feature roughness while maintaining reasonable process throughput. This limitation is particularly challenging for electron and photon based NGL technologies, where fast chemically amplified resists are used to define the patterned images. Control of linewidth roughness (LWR) is critical, since it adversely affects device speed and timing in CMOS circuits. Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. This technology has been shown to be an effective method for replication of nanometer-scale structures from a template (imprint mask). As a high fidelity replication process, the resolution of imprint lithography is determined by the ability to create a master template having the required dimensions. Although the imprint process itself adds no additional linewidth roughness to the patterning process, the burden of minimizing LWR falls to the template fabrication process. Non chemically amplified resists, such as ZEP520A, are not nearly as sensitive but have excellent resolution and can produce features with very low LWR. The purpose of this paper is to characterize LWR for the entire imprint lithography process, from template fabrication to the final patterned substrate. Three experiments were performed documenting LWR in the template, imprint, and after pattern transfer. On average, LWR was extremely low (less than 3nm, 3σ), and independent of the processing step and feature size.

  17. Fabrication and Characterization of Three Dimensional Photonic Crystals Generated by Multibeam Interference Lithography

    ERIC Educational Resources Information Center

    Chen, Ying-Chieh

    2009-01-01

    Multibeam interference lithography is investigated as a manufacturing technique for three-dimensional photonic crystal templates. In this research, optimization of the optical setup and the photoresist initiation system leads to a significant improvement of the optical quality of the crystal, as characterized by normal incidence optical…

  18. X-ray lithography source

    DOEpatents

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  19. X-ray lithography source

    DOEpatents

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  20. Optical microspectrometer

    DOEpatents

    Sweatt, William C.; Christenson, Todd R.

    2004-05-25

    An optical microspectrometer comprises a grism to disperse the spectra in a line object. A single optical microspectrometer can be used to sequentially scan a planar object, such as a dye-tagged microchip. Because the optical microspectrometer is very compact, multiple optical microspectrometers can be arrayed to provide simultaneous readout across the width of the planar object The optical microspectrometer can be fabricated with lithographic process, such as deep X-ray lithography (DXRL), with as few as two perpendicular exposures.

  1. Metallic nanodot arrays by stencil lithography for plasmonic biosensing applications.

    PubMed

    Vazquez-Mena, Oscar; Sannomiya, Takumi; Villanueva, Luis G; Voros, Janos; Brugger, Juergen

    2011-02-22

    The fabrication of gold nanodots by stencil lithography and its application for optical biosensing based on localized surface plasmon resonance are presented. Arrays of 50-200 nm wide nanodots with different spacing of 50-300 nm are fabricated without any resist, etching, or lift-off process. The dimensions and morphology of the nanodots were characterized by scanning electron and atomic force microscopy. The fabricated nanodots showed localized surface plasmon resonance in their extinction spectra in the visible range. The resonance wavelength depends on the periodicity and dimensions of the nanodots. Bulk refractive index measurements and model biosensing of streptavidin were successfully performed based on the plasmon resonance shift induced by local refractive index change when biomolecules are adsorbed on the nanodots. These results demonstrate the potential of stencil lithography for the realization of plasmon-based biosensing devices. PMID:21192666

  2. Self-aligned grating couplers on template-stripped metal pyramids via nanostencil lithography

    NASA Astrophysics Data System (ADS)

    Klemme, Daniel J.; Johnson, Timothy W.; Mohr, Daniel A.; Oh, Sang-Hyun

    2016-05-01

    We combine nanostencil lithography and template stripping to create self-aligned patterns about the apex of ultrasmooth metal pyramids with high throughput. Three-dimensional patterns such as spiral and asymmetric linear gratings, which can couple incident light into a hot spot at the tip, are presented as examples of this fabrication method. Computer simulations demonstrate that spiral and linear diffraction grating patterns are both effective at coupling light to the tip. The self-aligned stencil lithography technique can be useful for integrating plasmonic couplers with sharp metallic tips for applications such as near-field optical spectroscopy, tip-based optical trapping, plasmonic sensing, and heat-assisted magnetic recording.

  3. High refractive index materials design for the next generation ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Furukawa, Taiichi; Kishida, Takanori; Yasuda, Kyouyuu; Shimokawa, Tsutomu; Liu, Zhi; Slezak, Mark; Hieda, Katsuhiko

    2008-03-01

    High-refractive-index fluids (HIFs) are being considered to replace water as the immersion fluid in next generation 193nm immersion scanner. We have demonstrated the attractive optical properties for our HIF candidates, HIL-001, HIL-203 and HIL-204. Especially, HIL-203 and HIL-204 have higher transmittance compared to water. In this paper, we describe our latest results on the comparative evaluations including photo-degradation behavior and lens contamination phenomenon in a flow system. For laser induced fluid degradation behavior, it was shown the higher initial transmittance resulted in the higher laser durability. However, the complicated phenomenon was observed for the lens contamination test. That is, HIL-204 with higher initial transmittance showed higher lens contamination rate than HIL-203. From several analyses, the complicated behaviors among HILs were speculated to be caused by the different nature of photo-degraded impurities. In order to control the fluid transmittance change and suppress the lens contamination during exposure, the refining process was definitely necessary for HIL reuse system. Based on the refining mechanism and the refining material design, we have developed an appropriate refinement unit named Refine B. This approach provided us with the result that Refine B could control the change of fluid transmittance and suppress the lens contamination rate.

  4. Inspection of imprint lithography patterns for semiconductor and patterned media

    NASA Astrophysics Data System (ADS)

    Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

    2010-03-01

    Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

  5. Development of water-developable resist material derived from biomass in EB lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Oshima, Akihiro; Wakabayashi, Takanori; Sekiguchi, Atsushi; Kozawa, Takahiro; Tagawa, Seiichi

    2012-06-01

    A water developable, non-chemically amplified, high sensitive, and negative tone resist material in the developable process of EB lithography was investigated for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide or resist solvents. The material design concept to use the plantbased resist material derived from biomass was proposed. A novel high-sensitive negative tone of plantbased resist material with the sugar chain structure derived from biomass on underlayer was demonstrated in EB lithography for the future production of optical and electronic devices. The 400 nm line patterning images with exposure dose of 7.0 μC/cm2 were provided by specific process conditions of EB lithography for optical and electronic devices.

  6. Considerations for cost of ownership in EUV lithography

    NASA Astrophysics Data System (ADS)

    Keen, Anthony; Bailey, Christopher; Donders, Jos; Condon, Neil

    2011-04-01

    The cost of ownership of semiconductor manufacturing equipment is typically addressed in terms of raw utility consumption. Focusing on energy, the average consumption of a typical semiconductor fabrication plant has doubled over a recent 10 year period, with approximately 30% of this energy currently attributed to vacuum equipment. Compared to conventional optical lithography, extreme ultraviolet lithography (EUVL) requires the adoption of a vacuum subsystem to enable the technology, bringing an additional vacuum requirement to semiconductor fabs. With this trend it is increasingly important to focus on more efficient ways of operating semiconductor manufacturing tools and their supporting equipment. Clever operation through employment of 'GREEN' modes can provide significant utility savings. However, in semiconductor lithography, tool uptime is a critical parameter to be considered in any cost of ownership model, and the facility vacuum equipment plays an intimate role here, so including redundancy in pumping equipment can be a key enabler to maintaining tool uptime. Consequently optimizing the design of the vacuum subsystem will help to reduce the overall footprint, utility consumption and energy costs associated with this process.

  7. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  8. Advanced electric-field scanning probe lithography on molecular resist using active cantilever

    NASA Astrophysics Data System (ADS)

    Kaestner, Marcus; Aydogan, Cemal; Lipowicz, Hubert-Seweryn; Ivanov, Tzvetan; Lenk, Steve; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Atanasov, Ivaylo; Krivoshapkina, Yana; Hofer, Manuel; Holz, Mathias; Rangelow, Ivo W.

    2015-03-01

    The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many novel nanoelectronic, NEMS, optical and bio-nanotechnology-based devices. Based on the thermally actuated, piezoresistive cantilever technology we have developed a first prototype of a scanning probe lithography (SPL) platform able to image, inspect, align and pattern features down to single digit nano regime. The direct, mask-less patterning of molecular resists using active scanning probes represents a promising path circumventing the problems in today's radiation-based lithography. Here, we present examples of practical applications of the previously published electric field based, current-controlled scanning probe lithography on molecular glass resist calixarene by using the developed tabletop SPL system. We demonstrate the application of a step-and-repeat scanning probe lithography scheme including optical as well as AFM based alignment and navigation. In addition, sequential read-write cycle patterning combining positive and negative tone lithography is shown. We are presenting patterning over larger areas (80 x 80 μm) and feature the practical applicability of the lithographic processes.

  9. Direct write electron beam lithography: a historical overview

    NASA Astrophysics Data System (ADS)

    Pfeiffer, Hans C.

    2010-09-01

    Maskless pattern generation capability in combination with practically limitless resolution made probe-forming electron beam systems attractive tools in the semiconductor fabrication process. However, serial exposure of pattern elements with a scanning beam is a slow process and throughput presented a key challenge in electron beam lithography from the beginning. To meet this challenge imaging concepts with increasing exposure efficiency have been developed projecting ever larger number of pixels in parallel. This evolution started in the 1960s with the SEM-type Gaussian beam systems writing one pixel at a time directly on wafers. During the 1970s IBM pioneered the concept of shaped beams containing multiple pixels which led to higher throughput and an early success of e-beam direct write (EBDW) in large scale manufacturing of semiconductor chips. EBDW in a mix-and match approach with optical lithography provided unique flexibility in part number management and cycle time reduction and proved extremely cost effective in IBM's Quick-Turn-Around-Time (QTAT) facilities. But shaped beams did not keep pace with Moore's law because of limitations imposed by the physics of charged particles: Coulomb interactions between beam electrons cause image blur and consequently limit beam current and throughput. A new technology approach was needed. Physically separating beam electrons into multiple beamlets to reduce Coulomb interaction led to the development of massively parallel projection of pixels. Electron projection lithography (EPL) - a mask based imaging technique emulating optical steppers - was pursued during the 1990s by Bell Labs with SCALPEL and by IBM with PREVAIL in partnership with Nikon. In 2003 Nikon shipped the first NCR-EB1A e-beam stepper based on the PREVAIL technology to Selete. It exposed pattern segments containing 10 million pixels in single shot and represented the first successful demonstration of massively parallel pixel projection. However the window

  10. Wiring up pre-characterized single-photon emitters by laser lithography.

    PubMed

    Shi, Q; Sontheimer, B; Nikolay, N; Schell, A W; Fischer, J; Naber, A; Benson, O; Wegener, M

    2016-01-01

    Future quantum optical chips will likely be hybrid in nature and include many single-photon emitters, waveguides, filters, as well as single-photon detectors. Here, we introduce a scalable optical localization-selection-lithography procedure for wiring up a large number of single-photon emitters via polymeric photonic wire bonds in three dimensions. First, we localize and characterize nitrogen vacancies in nanodiamonds inside a solid photoresist exhibiting low background fluorescence. Next, without intermediate steps and using the same optical instrument, we perform aligned three-dimensional laser lithography. As a proof of concept, we design, fabricate, and characterize three-dimensional functional waveguide elements on an optical chip. Each element consists of one single-photon emitter centered in a crossed-arc waveguide configuration, allowing for integrated optical excitation and efficient background suppression at the same time. PMID:27507165

  11. Wiring up pre-characterized single-photon emitters by laser lithography

    NASA Astrophysics Data System (ADS)

    Shi, Q.; Sontheimer, B.; Nikolay, N.; Schell, A. W.; Fischer, J.; Naber, A.; Benson, O.; Wegener, M.

    2016-08-01

    Future quantum optical chips will likely be hybrid in nature and include many single-photon emitters, waveguides, filters, as well as single-photon detectors. Here, we introduce a scalable optical localization-selection-lithography procedure for wiring up a large number of single-photon emitters via polymeric photonic wire bonds in three dimensions. First, we localize and characterize nitrogen vacancies in nanodiamonds inside a solid photoresist exhibiting low background fluorescence. Next, without intermediate steps and using the same optical instrument, we perform aligned three-dimensional laser lithography. As a proof of concept, we design, fabricate, and characterize three-dimensional functional waveguide elements on an optical chip. Each element consists of one single-photon emitter centered in a crossed-arc waveguide configuration, allowing for integrated optical excitation and efficient background suppression at the same time.

  12. Wiring up pre-characterized single-photon emitters by laser lithography

    PubMed Central

    Shi, Q.; Sontheimer, B.; Nikolay, N.; Schell, A. W.; Fischer, J.; Naber, A.; Benson, O.; Wegener, M.

    2016-01-01

    Future quantum optical chips will likely be hybrid in nature and include many single-photon emitters, waveguides, filters, as well as single-photon detectors. Here, we introduce a scalable optical localization-selection-lithography procedure for wiring up a large number of single-photon emitters via polymeric photonic wire bonds in three dimensions. First, we localize and characterize nitrogen vacancies in nanodiamonds inside a solid photoresist exhibiting low background fluorescence. Next, without intermediate steps and using the same optical instrument, we perform aligned three-dimensional laser lithography. As a proof of concept, we design, fabricate, and characterize three-dimensional functional waveguide elements on an optical chip. Each element consists of one single-photon emitter centered in a crossed-arc waveguide configuration, allowing for integrated optical excitation and efficient background suppression at the same time. PMID:27507165

  13. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  14. Nanoimprint lithography of Al nanovoids for deep-UV SERS.

    PubMed

    Ding, Tao; Sigle, Daniel O; Herrmann, Lars O; Wolverson, Daniel; Baumberg, Jeremy J

    2014-10-22

    Deep-ultraviolet surface-enhanced Raman scattering (UV-SERS) is a promising technique for bioimaging and detection because many biological molecules possess UV absorption lines leading to strongly resonant Raman scattering. Here, Al nanovoid substrates are developed by combining nanoimprint lithography of etched polymer/silica opal films with electron beam evaporation, to give a high-performance sensing platform for UV-SERS. Enhancement by more than 3 orders of magnitude in the UV-SERS performance was obtained from the DNA base adenine, matching well the UV plasmonic optical signatures and simulations, demonstrating its suitability for biodetection. PMID:25291629

  15. Development of a laboratory extreme-ultraviolet lithography tool

    SciTech Connect

    Tichenor, D.A.; Kubiak, G.D.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H.; Birtola, S.R.; Jin, P.S.; Arling, R.W.; Ray-Chaudhuri, A.K.; Sweatt, W.C.; Chow, W.W.; Bjorkholm, J.E.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Fetter, L.A.; Wood, O.R. II; Waskiewicz, W.K.; White, D.L.; Windt, D.L.; Jewell, T.E.

    1994-04-01

    The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzchild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.

  16. Masks for high aspect ratio x-ray lithography

    SciTech Connect

    Malek, C.K.; Jackson, K.H.; Bonivert, W.D.; Hruby, J.

    1997-04-01

    Fabrication of very high aspect ratio microstructures, as well as ultra-high precision manufacturing is of increasing interest in a multitude of applications. Fields as diverse as micromechanics, robotics, integrated optics, and sensors benefit from this technology. The scale-length of this spatial regime is between what can be achieved using classical machine tool operations and that which is used in microelectronics. This requires new manufacturing techniques, such as the LIGA process, which combines x-ray lithography, electroforming, and plastic molding.

  17. Nanoimprint Lithography of Al Nanovoids for Deep-UV SERS

    PubMed Central

    2014-01-01

    Deep-ultraviolet surface-enhanced Raman scattering (UV-SERS) is a promising technique for bioimaging and detection because many biological molecules possess UV absorption lines leading to strongly resonant Raman scattering. Here, Al nanovoid substrates are developed by combining nanoimprint lithography of etched polymer/silica opal films with electron beam evaporation, to give a high-performance sensing platform for UV-SERS. Enhancement by more than 3 orders of magnitude in the UV-SERS performance was obtained from the DNA base adenine, matching well the UV plasmonic optical signatures and simulations, demonstrating its suitability for biodetection. PMID:25291629

  18. Wavefront sensor sampling plane fabricated by maskless grayscale lithography

    NASA Astrophysics Data System (ADS)

    Cirino, G. A.; Amaral, F. T.; Lopera, S. A.; Montagnolil, A. N.; Arruda, A.; Mansano, R. D.; M.-Brahim, T.; Monteiro, D. W. L.

    2014-05-01

    In this work we report the design and characterization of a Shack-Hartmann wavefront sampling plane based on a microlens array (MLA) composed of 12 X 12 hexagonal contiguous diffractive lenslet, with 355 μm pitch, 4.5 mm focal length, and 4.3 X 4.3 mm lateral dimensions. The device was fabricated by maskless grayscale lithography based on Digital Light Projector (DLP) technology. Optical characterization was performed in order to measure wavefront aberrations in Zernike polynomials terms. Intraocular lenses were used as test elements because they yield well-known optical aberrations, such as defocus and spherical aberration. For the wavefront reconstruction, the modal approach was used, in which the first derivatives of Zernike polynomials are used as the set of orthogonal basis functions. The corresponding polynomial coefficients up to the first 10 Zernike terms were obtained and the resulting reconstructed wavefront presents an RMS reconstruction error compliant to most optical systems of interest.

  19. Investigation of Glass Polycapillaries for Use in Proximity X-Ray Lithography.

    NASA Astrophysics Data System (ADS)

    Klotzko, Ira L.

    There is predicted growth of the micro-electronics industry in the 1990's and into the early 21^{st} century. In order for manufacturers of IC's to stay competitive in this vast global market, devices will have to be faster, more sophisticated, and more capable. According to the National Technology Roadmap for Semiconductors by The Semiconductor Industry Association (SIA), feature sizes in device structures are required to decrease in size in order for these goals to be realized. Presently, manufacturers use lithography with deep-ultra-violet (DUV) ^{1,2} wavelengths to produce circuit features of 0.30 μm and below. Because the wavelength of radiation used is of the same size as the features, diffraction phenomenon has become a limiting factor. Industry must therefore choose a new lithographic technique that can overcome the difficulties caused by these relatively large wavelengths. Although, some techniques have the ability to produce feature sizes of 0.2 μm and below, such as electron -beam lithography, ion-beam lithography, synchrotron-x-ray lithography, and even some optical techniques, they have not all developed an economically feasible method of mass producing device structures with a variety of geometries ^{3,4,5}. One such technique, point source x-ray lithography (PXRL), using considerably smaller wavelengths than those used by the current state of the art, could assist optical lithography in economically producing future generations of IC's. The characteristics of an x-ray field needed for x-ray lithography (XRL) is critically important to the manufacturing process. The beam must have control over the divergences produced by the finite-wafer-mask distance and the finite source size, the dose must be uniform throughout the field of exposure, the wavelength must be such as to prevent device damage and to maximize the interaction with the photo-resist, and there must be enough intensity to minimize exposure time. Point-source-x-ray-lithography system

  20. Antireflective surface patterned by rolling mask lithography

    NASA Astrophysics Data System (ADS)

    Seitz, Oliver; Geddes, Joseph B.; Aryal, Mukti; Perez, Joseph; Wassei, Jonathan; McMackin, Ian; Kobrin, Boris

    2014-03-01

    A growing number of commercial products such as displays, solar panels, light emitting diodes (LEDs and OLEDs), automotive and architectural glass are driving demand for glass with high performance surfaces that offer anti-reflective, self-cleaning, and other advanced functions. State-of-the-art coatings do not meet the desired performance characteristics or cannot be applied over large areas in a cost-effective manner. "Rolling Mask Lithography" (RML™) enables highresolution lithographic nano-patterning over large-areas at low-cost and high-throughput. RML is a photolithographic process performed using ultraviolet (UV) illumination transmitted through a soft cylindrical mask as it rolls across a substrate. Subsequent transfer of photoresist patterns into the substrate is achieved using an etching process, which creates a nanostructured surface. The current generation exposure tool is capable of patterning one-meter long substrates with a width of 300 mm. High-throughput and low-cost are achieved using continuous exposure of the resist by the cylindrical photomask. Here, we report on significant improvements in the application of RML™ to fabricate anti-reflective surfaces. Briefly, an optical surface can be made antireflective by "texturing" it with a nano-scale pattern to reduce the discontinuity in the index of refraction between the air and the bulk optical material. An array of cones, similar to the structure of a moth's eye, performs this way. Substrates are patterned using RML™ and etched to produce an array of cones with an aspect ratio of 3:1, which decreases the reflectivity below 0.1%.

  1. Note: fabrication of a simple versatile micro-positioning setup for automated soft lithography.

    PubMed

    Hautefeuille, M; Cortes, J G Lopez; Alfaro, M C Ortega; Castro, M P Carreon; Velazquez, V

    2011-11-01

    In this note, we report the simple development of a homemade versatile device that allows micrometric vertical micro-positioning for computer-controlled dip-coating thin film deposition and micro-contact printing capabilities. Using mostly recycled parts, the resulting low-cost setup offers great precision, ease of use, and portability while complying with common soft lithography technique's specifications. It results in an excellent benchtop alternative to more expensive commercial solutions or more complex custom soft lithography devices, especially for organic electronics and quantum optics applications.

  2. Double exposure technology for KrF lithography

    NASA Astrophysics Data System (ADS)

    Geisler, S.; Bauer, J.; Haak, U.; Stolarek, D.; Schulz, K.; Wolf, H.; Meier, W.; Trojahn, M.; Matthus, E.; Beyer, H.; Old, G.; Marschmeyer, St.; Kuck, B.

    2008-04-01

    The application of Double Exposure Lithography (DEL) would enlarge the capability of 248 nm exposure technique to smaller pitch. We will use the DEL for the integration of critical layers for dedicated applications requiring resolution enhancement into 0.13 μm BiCMOS technology. In this paper we present the overlay precision and the focus difference of 1st and 2nd exposure as critical parameters of the DEL for k I <= 0.3 lithography (100 nm half pitch) with binary masks (BIM). The realization of excellent overlay (OVL) accuracy is a main key of double exposure and double patterning techniques. We show the DEL requires primarily a good mask registration, when the wafer stays in the scanner for both exposures without alignment between 1st and 2nd exposure. The exposure tool overlay error is more a practical limit for double patterning lithography (DPL). Hence we prefer the DEL for the resolution enhancement, especially if we use the KrF high NA lithography tool for 130 nm generation. Experimental and simulated results show that the critical dimension uniformity (CDU) depends strongly on the overlay precision. The DEL results show CDU is not only affected by the OVL but also by an optical proximity effect of 1st and 2nd exposure and the mask registration. The CD uniformity of DEL demands a low focus difference between 1st and 2nd exposure and therefore requires a good focus repeatability of the exposure tool. The Depth of Focus (DOF) of 490 nm at stable CD of lines was achieved for DEL. If we change the focus of one of the exposures the CD-focus performance of spaces was reduced with simultaneous line position changing. CDU vs. focus difference between 1st and 2nd exposure demands a focus repeatability <100 nm for the exposure tool. Summary, the results show DEL has the potential to be a practical lithography enhancement method for device fabrication using high NA KrF tool generation.

  3. Compact multi-bounce projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2002-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four optical elements providing five reflective surfaces for projecting a mask image onto a substrate. The five optical surfaces are characterized in order from object to image as concave, convex, concave, convex and concave mirrors. The second and fourth reflective surfaces are part of the same optical element. The optical system is particularly suited for ring field step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width, which effectively minimizes dynamic distortion.

  4. Automatic layout feature extraction for lithography hotspot detection based on deep neural network

    NASA Astrophysics Data System (ADS)

    Matsunawa, Tetsuaki; Nojima, Shigeki; Kotani, Toshiya

    2016-03-01

    Lithography hotspot detection in the physical verification phase is one of the most important techniques in today's optical lithography based manufacturing process. Although lithography simulation based hotspot detection is widely used, it is also known to be time-consuming. To detect hotspots in a short runtime, several machine learning based methods have been proposed. However, it is difficult to realize highly accurate detection without an increase in false alarms because an appropriate layout feature is undefined. This paper proposes a new method to automatically extract a proper layout feature from a given layout for improvement in detection performance of machine learning based methods. Experimental results show that using a deep neural network can achieve better performance than other frameworks using manually selected layout features and detection algorithms, such as conventional logistic regression or artificial neural network.

  5. Optimal design of wide-view-angle waveplate used for polarimetric diagnosis of lithography system

    NASA Astrophysics Data System (ADS)

    Gu, Honggang; Jiang, Hao; Zhang, Chuanwei; Chen, Xiuguo; Liu, Shiyuan

    2016-03-01

    The diagnosis and control of the polarization aberrations is one of the main concerns in a hyper numerical aperture (NA) lithography system. Waveplates are basic and indispensable optical components in the polarimetric diagnosis tools for the immersion lithography system. The retardance of a birefringent waveplate is highly sensitive to the incident angle of the light, which makes the conventional waveplate not suitable to be applied in the polarimetric diagnosis for the immersion lithography system with a hyper NA. In this paper, we propose a method for the optimal design of a wideview- angle waveplate by combining two positive waveplates made from magnesium fluoride (MgF2) and two negative waveplates made from sapphire using the simulated annealing algorithm. Theoretical derivations and numerical simulations are performed and the results demonstrate that the maximum variation in the retardance of the optimally designed wide-view-angle waveplate is less than +/- 0.35° for a wide-view-angle range of +/- 20°.

  6. Nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Hanabata, Makoto

    2015-03-01

    Newly eco-friendly high light transparency film with plant-based materials was investigated to future development of liquid crystal displays and optical devices with water repellency as a chemical design concept of nanoimprint lithography. This procedure is proven to be suitable for material design and the process conditions of ultraviolet curing nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency. The developed formulation of advanced nanoimprinted materials design derived from lactulose and psicose, and the development of suitable UV nanoimprint conditions produced high resolutions of the conical shaped moth-eye regularly-nanostructure less than approximately 200 nm diameter, and acceptable patterning dimensional accuracy by the replication of 100 times of UV nanoimprint lithography cycles. The newly plant-based materials and the process conditions are expected as one of the defect less nanoimprint lithographic technologies in next generation electronic devices.

  7. Wafer scale fabrication of submicron chessboard gratings using phase masks in proximity lithography

    NASA Astrophysics Data System (ADS)

    Stuerzebecher, Lorenz; Harzendorf, Torsten; Fuchs, Frank; Zeitner, Uwe D.

    2012-03-01

    One and two dimensional grating structures with submicron period have a huge number of applications in optics and photonics. Such structures are conventionally fabricated using interference or e-beam lithography. However, both technologies have significant drawbacks. Interference lithography is limited to rather simple geometries and the sequential writing scheme of e-beam lithography leads to time consuming exposures for each grating. We present a novel fabrication technique for this class of microstructures which is based on proximity lithography in a mask aligner. The technology is capable to pattern a complete wafer within less than one minute of exposure time and offers thereby high lateral resolution and a reliable process. Our advancements compared to standard mask aligner lithography are twofold: First of all, we are using periodic binary phase masks instead of chromium masks to generate an aerial image of high resolution and exceptional light efficiency at certain distances behind the mask. Second, a special mask aligner illumination set-up is employed which allows to precisely control the incidence angles of the exposure light. This degree of freedom allows both, to shape the aerial image (e. g. transformation of a periodic spot pattern into a chessboard pattern) and to increase its depth of focus considerably. That way, our technology enables the fabrication of high quality gratings with arbitrary geometry in a fast and stable wafer scale process.

  8. Functional polymers by two-photon 3D lithography

    NASA Astrophysics Data System (ADS)

    Infuehr, Robert; Pucher, Niklas; Heller, Christian; Lichtenegger, Helga; Liska, Robert; Schmidt, Volker; Kuna, Ladislav; Haase, Anja; Stampfl, Jürgen

    2007-12-01

    In the presented work, two-photon 3D lithography and selective single-photon photopolymerization in a prefabricated polydimethylsiloxane matrix is presented as an approach with potential applicability of waveguide writing in 3D by two-photon polymerization. Photopolymers based on acrylate chemistry were used in order to evaluate the optical capabilities of the available two-photon system. Several photoinitiators, tailored for two-photon absorption, were tested in a mixture of trimethylolpropane triacrylate and ethoxylated trimethylolpropane triacrylate. Best results were obtained with a recently synthesized diynone-based photoinitiator. Feature resolutions in the range of 300 nm were achieved. Due to the cross-conjugated nature of that donor-π-acceptor-π-donor system a high two-photon absorption activity was achieved. Therefore, a resin mixture containing only 0.025 wt% of photoinitiator was practical for structuring by two-photon polymerization. The required initiator content was therefore a factor of 100 lower than in traditional one-photon lithography. The aim of the second part of this work was to fabricate optical waveguides by selectively irradiating a polymer network, which was swollen by a monomer. The monomer was polymerized by conventional single-photon polymerization and the uncured monomer was removed by evaporation at elevated temperatures. This treatment leads to a local change in refractive index. Refractive index changes in the range of Δ n = 0.01 (Δ n/ n = 0.7%) were achieved, which is sufficient for structuring waveguides for optoelectronic applications.

  9. Extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  10. Semiconductor foundry, lithography, and partners

    NASA Astrophysics Data System (ADS)

    Lin, Burn J.

    2002-07-01

    The semiconductor foundry took off in 1990 with an annual capacity of less than 0.1M 8-inch-equivalent wafers at the 2-mm node. In 2000, the annual capacity rose to more than 10M. Initially, the technology practiced at foundries was 1 to 2 generations behind that at integrated device manufacturers (IDMs). Presently, the progress in 0.13-mm manufacturing goes hand-in-hand with any of the IDMs. There is a two-order of magnitude rise in output and the progress of technology development outpaces IDMs. What are the reasons of the success? Is it possible to sustain the pace? This paper shows the quick rise of foundries in capacity, sales, and market share. It discusses the their uniqueness which gives rise to advantages in conjunction with challenges. It also shows the role foundries take with their customer partners and supplier partners, their mutual dependencies, as well as expectations. What role then does lithography play in the foundries? What are the lithographic challenges to sustain the pace of technology? The experience of technology development and transfer, at one of the major foundries, is used to illustrate the difficulties and progresses made. Looking into the future, as semiconductor manufacturing will become even more expensive and capital investment more prohibitive, we will make an attempt to suggest possible solutions.

  11. Multi-focal multiphoton lithography.

    PubMed

    Ritschdorff, Eric T; Nielson, Rex; Shear, Jason B

    2012-03-01

    Multiphoton lithography (MPL) provides unparalleled capabilities for creating high-resolution, three-dimensional (3D) materials from a broad spectrum of building blocks and with few limitations on geometry, qualities that have been key to the design of chemically, mechanically, and biologically functional microforms. Unfortunately, the reliance of MPL on laser scanning limits the speed at which fabrication can be performed, making it impractical in many instances to produce large-scale, high-resolution objects such as complex micromachines, 3D microfluidics, etc. Previously, others have demonstrated the possibility of using multiple laser foci to simultaneously perform MPL at numerous sites in parallel, but use of a stage-scanning system to specify fabrication coordinates resulted in the production of identical features at each focal position. As a more general solution to the bottleneck problem, we demonstrate here the feasibility for performing multi-focal MPL using a dynamic mask to differentially modulate foci, an approach that enables each fabrication site to create independent (uncorrelated) features within a larger, integrated microform. In this proof-of-concept study, two simultaneously scanned foci produced the expected two-fold decrease in fabrication time, and this approach could be readily extended to many scanning foci by using a more powerful laser. Finally, we show that use of multiple foci in MPL can be exploited to assign heterogeneous properties (such as differential swelling) to micromaterials at distinct positions within a fabrication zone.

  12. Multi-focal multiphoton lithography.

    PubMed

    Ritschdorff, Eric T; Nielson, Rex; Shear, Jason B

    2012-03-01

    Multiphoton lithography (MPL) provides unparalleled capabilities for creating high-resolution, three-dimensional (3D) materials from a broad spectrum of building blocks and with few limitations on geometry, qualities that have been key to the design of chemically, mechanically, and biologically functional microforms. Unfortunately, the reliance of MPL on laser scanning limits the speed at which fabrication can be performed, making it impractical in many instances to produce large-scale, high-resolution objects such as complex micromachines, 3D microfluidics, etc. Previously, others have demonstrated the possibility of using multiple laser foci to simultaneously perform MPL at numerous sites in parallel, but use of a stage-scanning system to specify fabrication coordinates resulted in the production of identical features at each focal position. As a more general solution to the bottleneck problem, we demonstrate here the feasibility for performing multi-focal MPL using a dynamic mask to differentially modulate foci, an approach that enables each fabrication site to create independent (uncorrelated) features within a larger, integrated microform. In this proof-of-concept study, two simultaneously scanned foci produced the expected two-fold decrease in fabrication time, and this approach could be readily extended to many scanning foci by using a more powerful laser. Finally, we show that use of multiple foci in MPL can be exploited to assign heterogeneous properties (such as differential swelling) to micromaterials at distinct positions within a fabrication zone. PMID:22282105

  13. Secondary Electrons in EUV Lithography

    SciTech Connect

    Torok, Justin; Re, Ryan Del; Herbol, Henry; Das, Sanjana; Bocharova, Irina; Paolucci, Angela; Ocola, Leonidas E.; Ventrice Jr., Carl; Lifshin, Eric; Denbeaux, Greg; Brainard, Robert L.

    2013-01-01

    Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUV-induced acid generation is therefore needed for the development of higher performance resists

  14. Soft x-ray reduction camera for submicron lithography

    DOEpatents

    Hawryluk, A.M.; Seppala, L.G.

    1991-03-26

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

  15. Soft x-ray reduction camera for submicron lithography

    DOEpatents

    Hawryluk, Andrew M.; Seppala, Lynn G.

    1991-01-01

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

  16. Tuning and Freezing Disorder in Photonic Crystals using Percolation Lithography.

    PubMed

    Burgess, Ian B; Abedzadeh, Navid; Kay, Theresa M; Shneidman, Anna V; Cranshaw, Derek J; Lončar, Marko; Aizenberg, Joanna

    2016-01-01

    Although common in biological systems, synthetic self-assembly routes to complex 3D photonic structures with tailored degrees of disorder remain elusive. Here we show how liquids can be used to finely control disorder in porous 3D photonic crystals, leading to complex and hierarchical geometries. In these optofluidic crystals, dynamically tunable disorder is superimposed onto the periodic optical structure through partial wetting or evaporation. In both cases, macroscopic symmetry breaking is driven by subtle sub-wavelength variations in the pore geometry. These variations direct site-selective infiltration of liquids through capillary interactions. Incorporating cross-linkable resins into our liquids, we developed methods to freeze in place the filling patterns at arbitrary degrees of partial wetting and intermediate stages of drying. These percolation lithography techniques produced permanent photonic structures with adjustable disorder. By coupling strong changes in optical properties to subtle differences in fluid behavior, optofluidic crystals may also prove useful in rapid analysis of liquids. PMID:26790372

  17. Holographic illuminator for synchrotron-based projection lithography systems

    DOEpatents

    Naulleau, Patrick P.

    2005-08-09

    The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

  18. Tuning and Freezing Disorder in Photonic Crystals using Percolation Lithography

    NASA Astrophysics Data System (ADS)

    Burgess, Ian B.; Abedzadeh, Navid; Kay, Theresa M.; Shneidman, Anna V.; Cranshaw, Derek J.; Lončar, Marko; Aizenberg, Joanna

    2016-01-01

    Although common in biological systems, synthetic self-assembly routes to complex 3D photonic structures with tailored degrees of disorder remain elusive. Here we show how liquids can be used to finely control disorder in porous 3D photonic crystals, leading to complex and hierarchical geometries. In these optofluidic crystals, dynamically tunable disorder is superimposed onto the periodic optical structure through partial wetting or evaporation. In both cases, macroscopic symmetry breaking is driven by subtle sub-wavelength variations in the pore geometry. These variations direct site-selective infiltration of liquids through capillary interactions. Incorporating cross-linkable resins into our liquids, we developed methods to freeze in place the filling patterns at arbitrary degrees of partial wetting and intermediate stages of drying. These percolation lithography techniques produced permanent photonic structures with adjustable disorder. By coupling strong changes in optical properties to subtle differences in fluid behavior, optofluidic crystals may also prove useful in rapid analysis of liquids.

  19. Tuning and Freezing Disorder in Photonic Crystals using Percolation Lithography

    PubMed Central

    Burgess, Ian B.; Abedzadeh, Navid; Kay, Theresa M.; Shneidman, Anna V.; Cranshaw, Derek J.; Lončar, Marko; Aizenberg, Joanna

    2016-01-01

    Although common in biological systems, synthetic self-assembly routes to complex 3D photonic structures with tailored degrees of disorder remain elusive. Here we show how liquids can be used to finely control disorder in porous 3D photonic crystals, leading to complex and hierarchical geometries. In these optofluidic crystals, dynamically tunable disorder is superimposed onto the periodic optical structure through partial wetting or evaporation. In both cases, macroscopic symmetry breaking is driven by subtle sub-wavelength variations in the pore geometry. These variations direct site-selective infiltration of liquids through capillary interactions. Incorporating cross-linkable resins into our liquids, we developed methods to freeze in place the filling patterns at arbitrary degrees of partial wetting and intermediate stages of drying. These percolation lithography techniques produced permanent photonic structures with adjustable disorder. By coupling strong changes in optical properties to subtle differences in fluid behavior, optofluidic crystals may also prove useful in rapid analysis of liquids. PMID:26790372

  20. Double-Sided Opportunities Using Chemical Lift-Off Lithography.

    PubMed

    Andrews, Anne M; Liao, Wei-Ssu; Weiss, Paul S

    2016-08-16

    We discuss the origins, motivation, invention, development, applications, and future of chemical lift-off lithography, in which a specified pattern of a self-assembled monolayer is removed, i.e., lifted off, using a reactive, patterned stamp that is brought into contact with the monolayer. For Au substrates, this process produces a supported, patterned monolayer of Au on the stamp in addition to the negative pattern in the original molecular monolayer. Both the patterned molecular monolayer on the original substrate and the patterned supported metal monolayer on the stamp are useful as materials and for further applications in sensing and other areas. Chemical lift-off lithography effectively lowers the barriers to and costs of high-resolution, large-area nanopatterning. On the patterned monolayer side, features in the single-nanometer range can be produced across large (square millimeter or larger) areas. Patterns smaller than the original stamp feature sizes can be produced by controlling the degree of contact between the stamp and the lifted-off monolayer. We note that this process is different than conventional lift-off processes in lithography in that chemical lift-off lithography removes material, whereas conventional lift-off is a positive-tone patterning method. Chemical lift-off lithography is in some ways similar to microtransfer printing. Chemical lift-off lithography has critical advantages in the preparation of biocapture surfaces because the molecules left behind are exploited to space and to orient functional(ized) molecules. On the supported metal monolayer side, a new two-dimensional material has been produced. The useful important chemical properties of Au (vis-à-vis functionalization with thiols) are retained, but the electronic and optical properties of bulk Au or even Au nanoparticles are not. These metal monolayers do not quench excitation and may be useful in optical measurements, particularly in combination with selective binding due to

  1. Double-Sided Opportunities Using Chemical Lift-Off Lithography.

    PubMed

    Andrews, Anne M; Liao, Wei-Ssu; Weiss, Paul S

    2016-08-16

    We discuss the origins, motivation, invention, development, applications, and future of chemical lift-off lithography, in which a specified pattern of a self-assembled monolayer is removed, i.e., lifted off, using a reactive, patterned stamp that is brought into contact with the monolayer. For Au substrates, this process produces a supported, patterned monolayer of Au on the stamp in addition to the negative pattern in the original molecular monolayer. Both the patterned molecular monolayer on the original substrate and the patterned supported metal monolayer on the stamp are useful as materials and for further applications in sensing and other areas. Chemical lift-off lithography effectively lowers the barriers to and costs of high-resolution, large-area nanopatterning. On the patterned monolayer side, features in the single-nanometer range can be produced across large (square millimeter or larger) areas. Patterns smaller than the original stamp feature sizes can be produced by controlling the degree of contact between the stamp and the lifted-off monolayer. We note that this process is different than conventional lift-off processes in lithography in that chemical lift-off lithography removes material, whereas conventional lift-off is a positive-tone patterning method. Chemical lift-off lithography is in some ways similar to microtransfer printing. Chemical lift-off lithography has critical advantages in the preparation of biocapture surfaces because the molecules left behind are exploited to space and to orient functional(ized) molecules. On the supported metal monolayer side, a new two-dimensional material has been produced. The useful important chemical properties of Au (vis-à-vis functionalization with thiols) are retained, but the electronic and optical properties of bulk Au or even Au nanoparticles are not. These metal monolayers do not quench excitation and may be useful in optical measurements, particularly in combination with selective binding due to

  2. The photosensitivity of ytterbium-doped optical fibers with aluminophosphosilicate glass cores

    NASA Astrophysics Data System (ADS)

    Rybaltovsky, A. A.; Butov, O. V.; Savel'ev, E. A.; Chamorovskii, Yu. K.

    2016-05-01

    The phenomenon of photoinduced refractive index change in active optical fibers with Al2O3/P2O5/Yb2O3/SiO2 core composition has been observed under the action of UV laser radiation with 193-nm wavelength. It is established that hydrogen treatment of active fibers plays a key role in ensuring a radical (about two orders of magnitude) increase in their photosensitivity. It is shown that intrafiber Bragg gratings with reflection coefficients above 99% can be formed, which are promising mirror reflectors for fiber laser cavities.

  3. Application of SMIF isolation to lithography processes for contamination control

    NASA Astrophysics Data System (ADS)

    Zhu, Sheng-Bai

    2001-08-01

    Contamination control is particularly important in lithography processes because pattern defects are converted to wafers after each exposure. Contamination, by definition, is undesired matter or energy, which causes product defects or process instabilities, and, consequently, reduces yield and reliability. In lithography processes, particles, condensable hydrocarbosn, base molecules, moisture, and static electricity are examples of contaminants. Particles are inert minute objects, which interfere with the proper formation of circuit features. Condensable hydrocarbosn may cause optics hazing which reduces image homogeneity and energy transmission. Some Chemically Amplified Resists (CAR) are susceptible to molecular base contamination, resulting in image degradation such as T-topping. Moisture can affect the characteristics of photoresist, destabilizing photo-exposure and development processes. In combination with water, amine containing photoresist strippers can form hydroxyl ions that can attack aluminum and aluminum-copper alloys. Charged surfaces can tract and hold contaminants of opposite polarity. In case the electrical field exceeds the dielectric strength, ESD event occurs, often accompanied with damage of reticles, masks, or wafer circuits. With SMIF isolation technologies, yield loss due to defects and/or instabilities is minimized. Reticles, masks, and wafers are isolated form contamination sources through hermetic seal, in conjunction with particle/chemical filtration, and static shielding. Pressurization, inert gas purge, chemical absorbents, and electric grounding or air ionization are techniques of removing contaminants from the critical areas. For best performance, adequate selection of construction materials is critical. This paper discusses impacts of contamination on lithography processes and the possibility of solving such problems using SMIF isolation techniques. Theoretical models are developed and experimental data are presented.

  4. Step and flash imprint lithography for sub-100-nm patterning

    NASA Astrophysics Data System (ADS)

    Colburn, Matthew; Grot, Annette; Amistoso, Marie N.; Choi, Byung J.; Bailey, Todd C.; Ekerdt, John G.; Sreenivasan, S. V.; Hollenhorst, James; Willson, C. Grant

    2000-07-01

    Step and Flash Imprint Lithography (SFIL) is an alternative to photolithography that efficiently generates high aspect-ratio, sub-micron patterns in resist materials. Other imprint lithography techniques based on physical deformation of a polymer to generate surface relief structures have produced features in PMMA as small as 10 nm, but it is very difficult to imprint large depressed features or to imprint a thick films of resist with high aspect-ratio features by these techniques. SFIL overcomes these difficulties by exploiting the selectivity and anisotropy of reactive ion etch (RIE). First, a thick organic 'transfer' layer (0.3 micrometer to 1.1 micrometer) is spin coated to planarize the wafer surface. A low viscosity, liquid organosilicon photopolymer precursor is then applied to the substrate and a quartz template applied at 2 psi. Once the master is in contact with the organosilicon solution, a crosslinking photopolymerization is initiated via backside illumination with broadband UV light. When the layer is cured the template is removed. This process relies on being able to imprint the photopolymer while leaving the minimal residual material in the depressed areas. Any excess material is etched away using a CHF3/He/O2 RIE. The exposed transfer layer is then etched with O2 RIE. The silicon incorporated in the photopolymer allows amplification of the low aspect ratio relief structure in the silylated resist into a high aspect ratio feature in the transfer layer. The aspect ratio is limited only by the mechanical stability of the transfer layer material and the O2 RIE selectivity and anisotropy. This method has produced 60 nm features with 6:1 aspect ratios. This lithography process was also used to fabricate alternating arrays of 100 nm Ti lines on a 200 nm pitch that function as efficient micropolarizers. Several types of optical devices including gratings, polarizers, and sub-wavelength structures can be easily patterned by SFIL.

  5. Fabrication of anisotropically arrayed nano-slots metasurfaces using reflective plasmonic lithography.

    PubMed

    Luo, Jun; Zeng, Bo; Wang, Changtao; Gao, Ping; Liu, Kaipeng; Pu, Mingbo; Jin, Jinjin; Zhao, Zeyu; Li, Xiong; Yu, Honglin; Luo, Xiangang

    2015-11-28

    Nanofabrication technology with high-resolution, high-throughput and low-cost is essential for the development of nanoplasmonic and nanophotonic devices. At present, most metasurfaces are fabricated in a point by point writing manner with electron beam lithography or a focused ion beam, which imposes a serious cost barrier with respect to practical applications. Near field optical lithography, seemingly providing a high-resolution and low-cost way, however, suffers from the ultra shallow depth and poor fidelity of obtained photoresist patterns due to the exponential decay feature of evanescent waves. Here, we propose a method of surface plasmonic imaging lithography by introducing a reflective plasmonic lens to amplify and compensate evanescent waves, resulting in the production of nano resist patterns with high fidelity, contrast and enhanced depth beyond that usually obtained by near field optical lithography. As examples, a discrete and anisotropically arrayed nano-slots mask pattern with different orientations and a size of 40 nm × 120 nm could be imaged in photoresist and transferred successfully onto a metal layer through an etching process. Evidence for the pattern quality is given by virtue of the fabricated metasurface lens devices showing good focusing performance in experiments. It is believed that this method provides a parallel, low-cost, high-throughput and large-area nanofabrication route for fabricating nanostructures of holograms, vortex phase plates, bio-sensors and solar cells etc. PMID:26507847

  6. Low-Energy E-Beam Proximity Lithography (LEEPL): Is the Simplest the Best?

    NASA Astrophysics Data System (ADS)

    Utsumi, Takao

    1999-12-01

    Low-energy e-beam proximity lithography (LEEPL) is proposed as the simplest integrated circuit lithography for minimum feature sizes ≤0.1 µm. This new e-beam lithography is similar to 1× X-ray proximity lithography except that the X-ray beam is replaced with a beam of low-energy electrons of 2 kV. This low e-beam energy permits the use of single-crystal 0.5-µm-thick silicon stencil masks without an absorbing metal layer of high atomic number. This membrane mask is thick enough for good heat conduction and thin enough for feature sizes ≤0.1 µm. Mask distortion caused by fabrication can be corrected by a fine-tuning deflector. Therefore, a mask with a residual distortion of more than 100 nm is acceptable. This eliminates the main difficulty of X-ray proximity lithography. The proposed system is not affected by a space-charge effect in the electron optics column, and a proximity effect with respect to both wafer and mask writings, and it is fundamentally low-power lithography which needs no special cooling system. The analysis shows that the e-beam column can be made entirely of electrostatic components to achieve sufficient resolution. For an appropriate resist process for this low-energy e-beam, we propose a bilayer process such as the chemical amplification of resist lines (CARL) process which consists of a chemically amplified thin deep ultraviolet (DUV) photoresist and a thick planarizing layer as a starting point. We estimated a throughput of about 40 12 inch wafers per hour and a resolution of a significantly less than 50 nm.

  7. Lithography and design in partnership: a new roadmap

    NASA Astrophysics Data System (ADS)

    Kahng, Andrew B.

    2008-10-01

    We discuss the notion of a 'shared technology roadmap' between lithography and design from several perspectives. First, we examine cultural gaps and other intrinsic barriers to a shared roadmap. Second, we discuss how lithography technology can change the design technology roadmap. Third, we discuss how design technology can change the lithography technology roadmap. We conclude with an example of the 'flavor' of technology roadmapping activity that can truly bridge lithography and design.

  8. Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography.

    PubMed

    Hong, Seongchul; Kim, Jung Sik; Lee, Jae Uk; Lee, Seung Min; Kim, Jung Hwan; Ahn, Jinho

    2015-11-01

    In addition to the development of extreme ultraviolet lithography (EUVL), studies on beyond extreme ultraviolet lithography (BEUVL), which uses radiation with a wavelength of 6.7 nm, are in progress for their application in high-volume manufacturing. The BEUV wavelength, which is much shorter than the EUV wavelength, improves the resolution of patterned features. However, suitable materials for the mask stack of BEUVL are still under development. In this study, the applicability of metallic materials, such as Ni, Co, Ir, W, and Ta, as the absorber in a binary-intensity BEUVL mask was evaluated. The mask-imaging properties were simulated by adopting a thickness that ensured a reflectivity of <1% for each material. Furthermore, we used a multilayered La/B mirror--which exhibited a high reflectivity at a wavelength of 6.7 nm--because BEUV light is absorbed by most materials, and therefore uses reflective optics as desired. The numerical aperture (NA), angle of incidence, and demagnification factor were 0.5 and 0.6, 6 degrees, and 8x, respectively. We confirmed that a line-and-space pattern with a half-pitch of 11 nm can be patterned with metallic absorbers by using a high NA. PMID:26726569

  9. Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography.

    PubMed

    Hong, Seongchul; Kim, Jung Sik; Lee, Jae Uk; Lee, Seung Min; Kim, Jung Hwan; Ahn, Jinho

    2015-11-01

    In addition to the development of extreme ultraviolet lithography (EUVL), studies on beyond extreme ultraviolet lithography (BEUVL), which uses radiation with a wavelength of 6.7 nm, are in progress for their application in high-volume manufacturing. The BEUV wavelength, which is much shorter than the EUV wavelength, improves the resolution of patterned features. However, suitable materials for the mask stack of BEUVL are still under development. In this study, the applicability of metallic materials, such as Ni, Co, Ir, W, and Ta, as the absorber in a binary-intensity BEUVL mask was evaluated. The mask-imaging properties were simulated by adopting a thickness that ensured a reflectivity of <1% for each material. Furthermore, we used a multilayered La/B mirror--which exhibited a high reflectivity at a wavelength of 6.7 nm--because BEUV light is absorbed by most materials, and therefore uses reflective optics as desired. The numerical aperture (NA), angle of incidence, and demagnification factor were 0.5 and 0.6, 6 degrees, and 8x, respectively. We confirmed that a line-and-space pattern with a half-pitch of 11 nm can be patterned with metallic absorbers by using a high NA.

  10. Candidate plasma-facing materials for EUV lithography source components

    NASA Astrophysics Data System (ADS)

    Hassanein, Ahmed; Burtseva, Tatiana; Brooks, Jeff N.; Konkashbaev, Isak K.; Rice, Bryan J.

    2003-06-01

    Material selection and lifetime issues for extreme ultraviolet (EUV) lithography are of critical importance to the success of this technology for commercial applications. This paper reviews current trends in production and use of plasma-facing electrodes, insulators, and wall materials for EUV type sources. Ideal candidate materials should be able to: withstand high thermal shock from the short pulsed plasma; withstand high thermal loads without structural failure; reduce debris generation during discharge; and be machined accurately. We reviewed the literature on current and proposed fusion plasma-facing materials as well as current experience with plasma gun and other simulation devices. Both fusion and EUV source materials involve issues of surface erosion by particle sputtering and heat-induced evaporation/melting. These materials are either bare structural materials or surface coatings. EUV materials can be divided into four categories: wall, electrode, optical, and insulator materials. For electric discharge sources, all four types are required, whereas laser-produced plasma EUV sources do not require electrode and insulator materials. Several types of candidate alloy and other materials and methods of manufacture are recommended for each component of EUV lithography light sources.

  11. Scatterometry-based process control for nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Asano, Masafumi; Tsuda, Hirotaka; Komori, Motofumi; Matsuki, Kazuto; Abe, Hideaki; Jung, Woo-Yung

    2016-03-01

    In principal, the critical dimension (CD) of Nanoimprint lithography (NIL) pattern is determined by the CD of the template pattern. Unless one template is changed to another, NIL does not have a knob for direct control of the CD, such as the exposure dose and focus in optical lithography. Alternatively, the CD would be controlled by adjusting the thickness of the residual layer underneath the NIL pattern and controlling the etching process to transfer the pattern to a substrate. Controlling the residual layer thickness (RLT) can change the etching bias, resulting in the control of the CD of etched pattern. RLT is controllable by the resist dispense condition of the inkjet. For CD control, the metrology of RLT and feedback of the results to the dispense condition are extremely important. Scatterometry is the most promising metrology for the task because it is nondestructive 3D metrology with high throughput. In this paper, we discuss how to control CD in the NIL process and propose a process control flow based on scatterometry.

  12. Wafer-scale fabrication of nanoapertures using corner lithography

    NASA Astrophysics Data System (ADS)

    Burouni, Narges; Berenschot, Erwin; Elwenspoek, Miko; Sarajlic, Edin; Leussink, Pele; Jansen, Henri; Tas, Niels

    2013-07-01

    Several submicron probe technologies require the use of apertures to serve as electrical, optical or fluidic probes; for example, writing precisely using an atomic force microscope or near-field sensing of light reflecting from a biological surface. Controlling the size of such apertures below 100 nm is a challenge in fabrication. One way to accomplish this scale is to use high resolution tools such as deep UV or e-beam. However, these tools are wafer-scale and expensive, or only provide series fabrication. For this reason, in this study a versatile method adapted from conventional micromachining is investigated to fabricate protruding apertures on wafer-scale. This approach is called corner lithography and offers control of the size of the aperture with diameter less than 50 nm using a low-budget lithography tool. For example, by tuning the process parameters, an estimated mean size of 44.5 nm and an estimated standard deviation of 2.3 nm are found. The technique is demonstrated—based on a theoretical foundation including a statistical analysis—with the nanofabrication of apertures at the apexes of micromachined pyramids. Besides apertures, the technique enables the construction of wires, slits and dots into versatile three-dimensional structures.

  13. Large area patterning using interference and nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Bläsi, B.; Tucher, N.; Höhn, O.; Kübler, V.; Kroyer, T.; Wellens, Ch.; Hauser, H.

    2016-04-01

    Interference lithography (IL) is the best suited technology for the origination of large area master structures with high resolution. In prior works, we seamlessly pattern areas of up to 1.2 x 1.2 m2 with periodic features, i.e. a diffraction grating with a period in the micron range. For this process we use an argon ion laser emitting at 363.8 nm. Thus, feasible periods are in the range of 100 μm to 200 nm. Edge-defined techniques or also called (self-aligned) double patterning processes can be used to double the spatial frequency of such structures. This way, we aim to reduce achievable periods further down to 100 nm. In order to replicate master structures, we make use of nanoimprint lithography (NIL) processes. In this work, we present results using IL as mastering and NIL as replication technology in the fields of photovoltaics as well as display and lighting applications. In photovoltaics different concepts like the micron-scale patterning of the front side as well as the realization of rear side diffraction gratings are presented. The benefit for each is shown on final device level. In the context of display and lighting applications, we realized various structures ranging from designed, symmetric or asymmetric, diffusers, antireflective and/or antiglare structures, polarization optical elements (wire grid polarizers), light guidance and light outcoupling structures.

  14. Fabrication of circular sawtooth gratings using focused UV lithography

    NASA Astrophysics Data System (ADS)

    Mi, Wujun; Karlsson, Staffan; Holmberg, Anders; Danielsson, Mats; Nillius, Peter

    2016-03-01

    This paper presents a novel micro-fabrication method using focused ultraviolet (UV) light to manufacture three-dimensional sawtooth structures in ultra-thick negative photoresist to fabricate a novel multi-prism x-ray lens. The method uses a lens to shape the UV beam instead of the photomask conventionally used in UV lithography. Benefits of this method include the ability to manufacture sawtooth structures in free form, for example in circular shapes as well as arrays of these shapes, and in resist that is up to 76 μm thick. To verify the method, initially a simple simulation based on Fourier optics was done to predict the exposure energy distribution in the photoresist. Furthermore, circular sawtooth gratings were manufactured in a 76 μm SU-8 resist. The UV lens was fabricated using electron beam lithography and then used to expose the SU-8 with UV light. This paper details the complete developed process, including pre-exposure with an e-beam and cold development, which creates stable sawtooth structures. The measured profile was compared to the ideal sawtooth and the simulation. The main discrepancy was in the smallest feature size, the sawtooth tips, which were wider than the desired structures, as would be expected by simulation.

  15. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOEpatents

    Cohen, Simon J; Jeong, Hwan J; Shafer, David R

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  16. Photomask lifetime issues in ArF lithography

    NASA Astrophysics Data System (ADS)

    Eschbach, Florence; Coon, Peter; Greenebaum, Barbara; Mittal, Anurag; Sanchez, Peter; Tanzil, Daniel; Ng, Grace; Yun, Henry; Sengupta, Archita

    2005-06-01

    Photomask lifetime has become a challenge since the introduction of high volume manufacturing 193nm photolithograph. Photomask lifetime is being impacted by a broad range of environmental and process factors resulting in inorganics crystals and organic contaminants formation as well as pellicle lifetime issues. Extensive work has been published on strategies for reduction of inorganic crystals photoinduced defects formation mainly focusing on photomask clean process improvements. This paper will focus on identifying root causes for photoinduced contaminants forming within the pellicle space area as well as identify environmental factors which have the potential of impacting pellicle membrane longevity. Outgasing experiments coupled with 193nm laser exposure tests were conducted to decouple and rank reticle/pellicle storage materials as well as pellicle outgasing contributors to photoinduced defects and identify factors impacting pellicle membrance longevity. Analytical test were conducted to compare the relative levels of reticle storage materials and pellicle outgasing contaminants. Experiments aimed at quantifying the fab environment contribution to photoinduced defects formation and impact on pellicle membrane lifetime will be discussed. Environmental conditions minimizing external contributing factors impacting photomask front side photoinduced defects formation and pellicle membrance longevity will be suggested.

  17. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  18. Using Lithography to Integrate Optoelectronic and Optofluidic Nanodevices into Systems - and Commercial Products

    NASA Astrophysics Data System (ADS)

    Scherer, Axel

    2010-03-01

    Lithography has fueled the trend towards ever-smaller and denser electronic integration over the past 50 years. Gordon Moore observed in the 1960s the trend towards increased electronic complexity and functionality within an area of a silicon chip, resulting from a relatively constant real-estate price and the cost of moving information from one chip to another The opportunity of highly accurate definition of microdevices and their precise alignment on top of each other by lithography also holds tremendous promise for increasing the complexity and functionality of optical, fluidic, and magnetic systems. Data communications has recently adopted the intimate integration of optics and electronics within silicon photonics chips. Useful medical diagnosis tools can be constructed through integration of electronics, optics and fluidics. Indeed, biomedical devices today can be constructed using two- and three-dimensional soft and hard lithography approaches, in which pico-Liter volumes can be manipulated and analyzed on optofluidic chips. In the near future, we can expect the emergence of lithographically integration of optics, fluidics and electronics for many other commercial applications. Here, a very subjective and biased view of the evolution of optofluidics and silicon photonics from concepts in the laboratory to commercial products will be presented. This talk will also emphasize future technological opportunities as well as pitfalls in the journey from laboratory devices to commercial systems.

  19. Simple method for measuring acid generation quantum efficiency at 193 nm

    NASA Astrophysics Data System (ADS)

    Szmanda, Charles R.; Kavanagh, Robert J.; Bohland, John F.; Cameron, James F.; Trefonas, Peter, III; Blacksmith, Robert F.

    1999-06-01

    Traditional methods of measuring the Dill C Parameter involve monitoring the absorbance of a resist as a function of exposure. In chemically amplified resist, absorbance changes with exposure are small and frequently have little correlation to the amount of photoacid generated.

  20. Interplay of three-dimensional profile change and CD variation in 193-nm advanced binary photomasks

    NASA Astrophysics Data System (ADS)

    Lin, Yun-Yue; Su, Sean; Hsush, Wen-Chang; Lien, Ta-Cheng; Chen, Jia-Jen; Lee, Shin-Chang; Yen, Anthony

    2012-06-01

    In this study, the relationship between the depth profile of features and critical dimension (CD) deviation on MoSi binary photomasks is comprehensively investigated using 3D atomic force microscopy (3D-AFM) and aerial image metrology system (AIMS). Detailed profile description based on various surface analysis techniques, was performed to reconstruct the profile at various stages of the mask fabrication process. It is found that profile change and sidewall byproduct formation are strongly correlated with the etching environment, wet cleaning, and post-treatment. These process-induced profile changes subsequently lead to wafer CD change which can be verified by deviation in AIMS and CDSEM measurements. Visualization of these 3D profile and morphology change clearly reveals that etching gas control forms an outer layer, to enhance etch selectivity, film strength, and immunity to the mask cleaning process. Our finding provides a direction for optimizing advanced photomask materials and processing.

  1. Photolysis of solid NH3 and NH3-H2O mixtures at 193 nm

    NASA Astrophysics Data System (ADS)

    Loeffler, M. J.; Baragiola, R. A.

    2010-12-01

    We have studied UV photolysis of solid ammonia and ammonia-dihydrate samples at 40 K, using infrared spectroscopy, mass spectrometry, and microgravimetry. We have shown that in the pure NH3 sample, the main species ejected are NH3, H2, and N2, where the hydrogen and nitrogen increase with laser fluence. This increase in N2 ejection with laser fluence explains the increase in mass loss rate detected by a microbalance. In contrast, for the ammonia-water mixture, we see very weak signals of H2 and N2 in the mass spectrometer, consistent with the very small mass loss during the experiment and with a <5% decrease in the NH3 infrared absorption bands spectroscopy after a fluence of ˜3 × 1019 photons/cm2. The results imply that ammonia-ice mixtures in the outer solar system are relatively stable under solar irradiation.

  2. Development of MOEMS technology in maskless lithography

    NASA Astrophysics Data System (ADS)

    Smith, David; Klenk, Dieter

    2009-02-01

    Micro-opto-electro-mechanical-systems (MOEMS) have proven to be a facilitating technology in the lithography industry. Recently, there have been significant advancements in digital micromirror device (DMD) based maskless lithography. These advancements have been in the areas of throughput, resolution, accuracy, and cost reduction. This progression in digital micromirror evolution provides considerable opportunities to displace existing lithographic techniques. Precise control of the individual mircormirrors, including scrolling, and full utilization of the FPGA, have allowed DMD-based lithography systems to reach new levels of throughput and repeatability, while reducing production and warranty costs. Throughput levels have far surpassed scanning laser techniques. Chip level cooling technologies allow for higher incident power to be reliably distributed over larger areas of the substrate. Resolution roadmaps are in place to migrate from the current 2400dpi (11μm) to 4800dpi (5.3μm). Without the constraints of mask requirements, mask alignment, storage, and defect analysis are not required, thus increasing accuracy and reducing cost. This contribution will examine the advancements in and benefits of DMD based maskless lithography.

  3. Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography.

    PubMed

    Tarrio, Charles; Grantham, Steven; Squires, Matthew B; Vest, Robert E; Lucatorto, Thomas B

    2003-01-01

    Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer extreme-ultraviolet stepper mirrors require the highest attainable reflectivity at 13 nm (nearly 70 %), but the central wavelength of the reflectivity of these mirrors must be measured with a wavelength repeatability of 0.001 nm and the peak reflectivity of the reflective masks with a repeatability of 0.12 %. We report on two upgrades of our NIST/DARPA Reflectometry Facility that have given us the ability to achieve 0.1 % repeatability and 0.3 % absolute uncertainty in our reflectivity measurements. A third upgrade, a monochromator with thermal and mechanical stability for improved wavelength repeatability, is currently in the design phase.

  4. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography

    SciTech Connect

    Moore, Jayven S.; Xantheas, Sotiris S.; Grate, Jay W.; Wietsma, Thomas W.; Gratton, Enrico; Vasdekis, Andreas

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL’s impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 4-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL’s modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  5. Single and multilayer metamaterials fabricated by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Bergmair, I.; Dastmalchi, B.; Bergmair, M.; Saeed, A.; Hilber, W.; Hesser, G.; Helgert, C.; Pshenay-Severin, E.; Pertsch, T.; Kley, E. B.; Hübner, U.; Shen, N. H.; Penciu, R.; Kafesaki, M.; Soukoulis, C. M.; Hingerl, K.; Muehlberger, M.; Schoeftner, R.

    2011-08-01

    We demonstrate for the first time a fast and easy nanoimprint lithography (NIL) based stacking process of negative index structures like fishnet and Swiss-cross metamaterials. The process takes a few seconds, is cheap and produces three-dimensional (3D) negative index materials (NIMs) on a large area which is suitable for mass production. It can be performed on all common substrates even on flexible plastic foils. This work is therefore an important step toward novel and breakthrough applications of NIMs such as cloaking devices, perfect lenses and magnification of objects using NIM prisms. The optical properties of the fabricated samples were measured by means of transmission and reflection spectroscopy. From the measured data we retrieved the effective refractive index which is shown to be negative for a wavelength around 1.8 µm for the fishnet metamaterial while the Swiss-cross metamaterial samples show a distinct resonance at wavelength around 1.4 µm.

  6. Micro stereo lithography and fabrication of 3D microdevices

    NASA Astrophysics Data System (ADS)

    Varadan, Vijay K.; Varadan, Vasundara V.

    1999-08-01

    Micro Stereo Lithography (MSL) is a poor man's LIGA for fabricating high aspect ratio MEMS devices in UV curable semiconducting polymers using either two computer-controlled low inertia galvanometric mirrors with the aid of focusing lens or an array of optical fibers. For 3D MEMS devices, the polymers need to have conductive and possibly piezoelectric or ferroelectric properties. Such polymers are being developed at Penn State resulting in microdevices for fluid and drug delivery. Applications may include implanted medical delivery systems, chemical and biological instruments, fluid delivery in engines, pump coolants and refrigerants for local cooling of electronic components. With the invention of organic thin film transistor, now it is possible to fabricate 3D polymeric MEMS devices with built-in-electronics similar to silicon based microelectronics. In this paper, a brief introduction of MSL system is presented followed by a detailed design and development of micro pumps using this approach.

  7. Nanoimprint lithography for functional three-dimensional patterns.

    PubMed

    Ofir, Yuval; Moran, Isaac W; Subramani, Chandramouleeswaran; Carter, Kenneth R; Rotello, Vincent M

    2010-08-24

    Nanoimprint lithography (NIL) is viewed as an alternative nanopatterning technique to traditional photolithography, allowing micrometer-scale and sub-hundred-nanometer resolution as well as three-dimensional structure fabrication. In this Research News article we highlight current activities towards the use of NIL in patterning active or functional materials, and the application of NIL in patterning materials that present both chemistry and structure/topography in the patterned structures, which provide scaffolds for subsequent manipulation. We discuss and give examples of the various materials and chemistries that have been used to create functional patterns and their implication in various fields as electronic and magnetic devices, optically relevant structures, biologically important surfaces, and 3D particles. PMID:20552602

  8. Designing Responsive Buckled Surfaces by Halftone Gel Lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jungwook; Hanna, James A.; Byun, Myunghwan; Santangelo, Christian D.; Hayward, Ryan C.

    2012-03-01

    Self-actuating materials capable of transforming between three-dimensional shapes have applications in areas as diverse as biomedicine, robotics, and tunable micro-optics. We introduce a method of photopatterning polymer films that yields temperature-responsive gel sheets that can transform between a flat state and a prescribed three-dimensional shape. Our approach is based on poly(N-isopropylacrylamide) copolymers containing pendent benzophenone units that allow cross-linking to be tuned by irradiation dose. We describe a simple method of halftone gel lithography using only two photomasks, wherein highly cross-linked dots embedded in a lightly cross-linked matrix provide access to nearly continuous, and fully two-dimensional, patterns of swelling. This method is used to fabricate surfaces with constant Gaussian curvature (spherical caps, saddles, and cones) or zero mean curvature (Enneper’s surfaces), as well as more complex and nearly closed shapes.

  9. Solvent immersion nanoimprint lithography of fluorescent conjugated polymers

    SciTech Connect

    Whitworth, G. L.; Zhang, S.; Stevenson, J. R. Y.; Ebenhoch, B.; Samuel, I. D. W.; Turnbull, G. A.

    2015-10-19

    Solvent immersion imprint lithography (SIIL) was used to directly nanostructure conjugated polymer films. The technique was used to create light-emitting diffractive optical elements and organic semiconductor lasers. Gratings with lateral features as small as 70 nm and depths of ∼25 nm were achieved in poly(9,9-dioctylfluorenyl-2,7-diyl). The angular emission from the patterned films was studied, comparing measurement to theoretical predictions. Organic distributed feedback lasers fabricated with SIIL exhibited thresholds for lasing of ∼40 kW/cm{sup 2}, similar to those made with established nanoimprint processes. The results show that SIIL is a quick, convenient and practical technique for nanopatterning of polymer photonic devices.

  10. CMOS compatible fabrication of 3D photonic crystals by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Eibelhuber, M.; Uhrmann, T.; Glinsner, T.

    2015-03-01

    Nanoimprinting techniques are an attractive solution for next generation lithography methods for several areas including photonic devices. A variety of potential applications have been demonstrated using nanoimprint lithography (NIL) (e.g. SAW devices, vias and contact layers with dual damascene imprinting process, Bragg structures, patterned media) [1,2]. Nanoimprint lithography is considered for bridging the gap from R and D to high volume manufacturing. In addition, it is capable to adapt to the needs of the fragmented and less standardized photonic market easily. In this work UV-NIL has been selected for the fabrication process of 3D-photonic crystals. It has been shown that UVNIL using a multiple layer approach is well suited to fabricate a 3D woodpile photonic crystal. The necessary alignment accuracies below 100nm were achieved using a simple optical method. In order to obtain sufficient alignment of the stacks to each other, a two stage alignment process is performed: at first proximity alignment is done followed by the Moiré alignment in soft contact with the substrate. Multiple steps of imprinting, etching, Si deposition and chemical mechanical polishing were implemented to create high quality 3D photonic crystals with up to 5 layers. This work has proven the applicability of nanoimprint lithography in a CMOS compatible process on 3D photonic crystals with alignment accuracy down to 100nm. Optimizing the processes will allow scaling up these structures on full wafers while still meeting the requirements of the designated devices.

  11. Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

    SciTech Connect

    Li, Li E-mail: wangz@cust.edu.cn Zhang, Ziang; Yu, Miao; Song, Zhengxun; Weng, Zhankun; Wang, Zuobin E-mail: wangz@cust.edu.cn Li, Wenjun; Wang, Dapeng; Zhao, Le; Peng, Kuiqing E-mail: wangz@cust.edu.cn

    2015-09-28

    Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ{sub 0} = 1064 nm. The minimal feature size is only several nanometers (sub λ{sub 0}/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser.

  12. EUV lithography cost of ownership analysis

    SciTech Connect

    Hawryluk, A.M.; Ceglio, N.M.

    1995-01-19

    The cost of fabricating state-of-the-art integrated circuits (ICs) has been increasing and it will likely be economic rather than technical factors that ultimately limit the progress of ICs toward smaller devices. It is estimated that lithography currently accounts for approximately one-third the total cost of fabricating modem ICs({sup 1}). It is expected that this factor will be fairly stable for the forseeable future, and as a result, any lithographic process must be cost-effective before it can be considered for production. Additionally, the capital equipment cost for a new fabrication facility is growing at an exponential rate (2); it will soon require a multibillion dollar investment in capital equipment alone to build a manufacturing facility. In this regard, it is vital that any advanced lithography candidate justify itself on the basis of cost effectiveness. EUV lithography is no exception and close attention to issues of wafer fabrication costs have been a hallmark of its early history. To date, two prior cost analyses have been conducted for EUV lithography (formerly called {open_quotes}Soft X-ray Projection Lithography{close_quotes}). The analysis by Ceglio, et. al., provided a preliminary system design, set performance specifications and identified critical technical issues for cost control. A follow-on analysis by Early, et.al., studied the impact of issues such as step time, stepper overhead, tool utilization, escalating photoresist costs and limited reticle usage on wafer exposure costs. This current study provides updated system designs and specifications and their impact on wafer exposure costs. In addition, it takes a first cut at a preliminary schematic of an EUVL fabrication facility along with an estimate of the capital equipment costs for such a facility.

  13. Phase-controlled entanglement in a quantum-beat laser: application to quantum lithography

    NASA Astrophysics Data System (ADS)

    Sete, Eyob A.; Dorfman, Konstantin E.; Dowling, Jonathan P.

    2011-11-01

    We study entanglement generation and control in a quantum-beat laser coupled to a two-mode squeezed vacuum reservoir. We show that the generated entanglement is robust against cavity losses and environmental decoherence and can be controlled by tuning the phases of the microwave and the squeezed input fields. Moreover, we discuss two-photon correlations, absorption and implementations in quantum optical lithography.

  14. PREVAIL: IBM's e-beam technology for next generation lithography

    NASA Astrophysics Data System (ADS)

    Pfeiffer, Hans C.

    2000-07-01

    PREVAIL - Projection Reduction Exposure with Variable Axis Immersion Lenses represents the high throughput e-beam projection approach to NGL which IBM is pursuing in cooperation with Nikon Corporation as alliance partner. This paper discusses the challenges and accomplishments of the PREVAIL project. The supreme challenge facing all e-beam lithography approaches has been and still is throughput. Since the throughput of e-beam projection systems is severely limited by the available optical field size, the key to success is the ability to overcome this limitation. The PREVAIL technique overcomes field-limiting off-axis aberrations through the use of variable axis lenses, which electronically shift the optical axis simultaneously with the deflected beam so that the beam effectively remains on axis. The resist images obtained with the Proof-of-Concept (POC) system demonstrate that PREVAIL effectively eliminates off- axis aberrations affecting both resolution and placement accuracy of pixels. As part of the POC system a high emittance gun has been developed to provide uniform illumination of the patterned subfield and to fill the large numerical aperture projection optics designed to significantly reduce beam blur caused by Coulomb interaction.

  15. Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography

    SciTech Connect

    Wedowski, M.; Gullikson, E.M.; Underwood, J.H.; Spiller, E.A.; Montcalm, C.; Kearney, P.A.; Bajt, S.; Schmidt, M.A.; Folta, J.A.

    1999-11-01

    The synchrotron-based reflectometer at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley is an important metrology tool within the current Extreme Ultraviolet Lithography (EUVL) program. This program is a joint activity of three National Laboratories and a consortium of leading semiconductor manufacturers. Its goal is the development of a technology for routine production of sub-100 nm feature sizes for microelectronic circuits. Multilayer-coated normal-incidence optical surfaces reflecting in the Extreme Ultraviolet (EUV) spectral range near 13 nm are the basis for this emerging technology. All optical components of EUV lithographic steppers need to be characterized at-wavelength during their development and manufacturing process. Multilayer coating uniformity and gradient, accurate wavelength matching and high peak reflectances are the main parameters to be optimized. The mechanical and optical properties of the reflectometer at ALS beamline 6.3.2 proved to be well suited for the needs of the current EUVL program. In particular the facility is highly precise in its wavelength calibration and the determination of absolute EUV reflectance. The reproducibility of results of measurements at ALS beamline 6.3.2 is 0.2 % for reflectivity and 0.002 nm for wavelength.

  16. Tunable lithography masks using chiral nematic fluids

    NASA Astrophysics Data System (ADS)

    Jeong, Hyeon Su; Srinivasarao, Mohan; Jung, Hee-Tae

    2013-03-01

    We present a facile route for pattern formation using chiral nematic fluids as tunable masks in lithography process. The chiral nematic phase prepared by adding a chiral dopant (CB15) to 5CB acted as a set of parallel cylindrical lenses and as a polarization selective photomask for the preparation of periodic line patterns. The pitch of the helical twist was easily controlled by the concentration of chiral agent and the feature size of the resulting pattern was easily tuned. Because of the high mobility of the small liquid crystalline compound, the preparation of chiral nematic fluids based lithography masks requires only a few seconds. This approach has significant advantages including facility, range of surface ordering, and rate of forming periodic arrays. Current affiliation: SK Innovation, Daejeon, Korea

  17. Implementation of assist features in EUV lithography

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

    2015-03-01

    The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

  18. Atom lithography with metastable helium

    SciTech Connect

    Allred, Claire S.; Reeves, Jason; Corder, Christopher; Metcalf, Harold

    2010-02-15

    A bright metastable helium (He*) beam is collimated sequentially with the bichromatic force and three optical molasses velocity compression stages. Each He* atom in the beam has 20 eV of internal energy that can destroy a molecular resist assembled on a gold coated silicon wafer. Patterns in the resist are imprinted onto the gold layer with a standard selective etch. Patterning of the wafer with the He{sup *} was demonstrated with two methods. First, a mesh was used to protect parts of the wafer making an array of grid lines. Second, a standing wave of {lambda}=1083 nm light was used to channel and focus the He* atoms into lines separated by {lambda}/2. The patterns were measured with an atomic force microscope establishing an edge resolution of 80 nm. Our results are reliable and repeatable.

  19. Formation of Magnetic Anisotropy by Lithography

    PubMed Central

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2–0.3 erg/cm2 for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  20. Formation of Magnetic Anisotropy by Lithography.

    PubMed

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2-0.3 erg/cm(2) for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  1. Self-segregating materials for immersion lithography

    NASA Astrophysics Data System (ADS)

    Sanders, Daniel P.; Sundberg, Linda K.; Brock, Phillip J.; Ito, Hiroshi; Truong, Hoa D.; Allen, Robert D.; McIntyre, Gregory R.; Goldfarb, Dario L.

    2008-03-01

    In this paper, we employ the self-segregating materials approach used in topcoat-free resists for water immersion lithography to extend the performance of topcoat materials for water immersion and to increase the contact angles of organic fluids on topcoat-free resists for high index immersion lithography. By tailoring polymers that segregate to the air and resist interfaces of the topcoat, high contact angle topcoats with relatively low fluorine content are achieved. While graded topcoats may extend the performance and/or reduce the cost of topcoat materials, the large amount of unprotected acidic groups necessary for TMAH development prevent them from achieving the high contact angles and low hysteresis exhibited by topcoat-free resists. Another application of this self-segregating approach is tailoring resist surfaces for high index immersion. Due to the low surface tension and higher viscosities of organic fluids relative to water and their lower contact angles on most surfaces, film pulling cannot be prevented without dramatically reducing wafer scan rates; however, tuning the surface energy of the resist may be important to control stain morphology and facilitate fluid removal from the wafer. By tailoring fluoropolymer additives for high contact angles with second generation organic high index immersion fluids, we show herein that topcoat-free resists can be developed specifically for high index immersion lithography with good contact angles and lithographic imaging performance.

  2. Immersion and 32nm lithography: now and future

    NASA Astrophysics Data System (ADS)

    Kameyama, Masaomi; McCallum, Martin

    2007-12-01

    The amazing growth of the semiconductor industry over the past decades has been supported, and in many cases driven, by miniaturization of devices. Behind this has been one strong backbone - lithography. In the 1970's, devices had geometries of several micrometers, but now we are about to enter 45nm device pre-production and shortly after move it into volume-production. Immersion lithography, although having a short development time, is already in production and will become the primary technology driver. What we need to do now is identify the solutions for 32nm lithography. There are several candidates for 32nm lithography, such as EUVL, High Index Immersion and Double Patterning / Double Exposure. Other more esoteric technologies such as nanoimprint and maskless lithography have also been mentioned. In this paper, the present status of Immersion lithography will be reviewed and each of the 32nm candidates are reviewed.

  3. A compact X-ray lithography lattice using superferric magnets

    NASA Astrophysics Data System (ADS)

    Swenson, C. A.; Huson, F. R.; Mackay, W. W.; Chen, L. K.; Ohnuma, S.

    A conceptual lattice design for a very compact superconducting synchrotron dedicated to X-ray lithography is presented. The synchrotron radiation produced in the high field superconducting magnets has a critical wavelength of 10 angstrom at a beam energy of about 787 MeV. The size and angular divergence of the beam in this lattice can satisfy future requirements for X-ray lithography. An optimization of the lithography parameters is presented.

  4. Scanner performance predictor and optimizer in further low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Aoyama, Hajime; Nakashima, Toshiharu; Ogata, Taro; Kudo, Shintaro; Kita, Naonori; Ikeda, Junji; Matsui, Ryota; Yamamoto, Hajime; Sukegawa, Ayako; Makino, Katsushi; Murayama, Masayuki; Masaki, Kazuo; Matsuyama, Tomoyuki

    2014-03-01

    Due to the importance of errors in lithography scanners, masks, and computational lithography in low-k1 lithography, application software is used to simultaneously reduce them. We have developed "Masters" application software, which is all-inclusive term of critical dimension uniformity (CDU), optical proximity effect (OPE), overlay (OVL), lens control (LNS), tool maintenance (MNT) and source optimization for wide process window (SO), for compensation of the issues on imaging and overlay. In this paper, we describe the more accurate and comprehensive solution of OPE-Master, LNS-Master and SO-Master with functions of analysis, prediction and optimization. Since OPE-Master employed a rigorous simulation, a root cause of error in OPE matching was found out. From the analysis, we had developed an additional knob and evaluated a proof-of- concept for the improvement. Influence of thermal issues on projection optics is evaluated with a heating prediction, and an optimization with scanner knobs on an optimized source taken into account mask 3D effect for obtaining usable process window. Furthermore, we discuss a possibility of correction for reticle expansion by heating comparing calculation and measurement.

  5. Wafer chamber having a gas curtain for extreme-UV lithography

    DOEpatents

    Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  6. Extreme ultraviolet lithography for 0.1{micro}m devices

    SciTech Connect

    Vaidya, S; Sweeney, D W; Stullen, R; Attwood, D

    1999-04-27

    Extreme Ultraviolet Lithography (EUVL) has emerged as one of the leading successors to optics for 0.1{micro}m IC fabrication. Its strongest attribute is the potential to scale to much finer resolution at high throughput. As such, this technique could meet the lithography needs for Si ULSI down to fundamental device limits. In the US, Lawrence Livermore, Sandia and Lawrence Berkeley Laboratories are participating in an industry funded research effort to evolve EUV technology and build a prototype camera for lithographic exposure. More recently, both Europe and Japan have initiated government/industry sponsored programs in EUVL development. This talk focuses on the program successes to date, and highlights some of the challenges that still lie ahead.

  7. Extreme Ultraviolet Lithography for 0.1 {micro}m Devices

    SciTech Connect

    Vaidya, S.; Sweeney, D.W.; Stulen, R.; Attwood, D.

    1999-07-07

    Extreme Ultraviolet Lithography (EUVL) has emerged as one of the leading successors to optics for 0.1 {micro}m IC fabrication. Its strongest attribute is the potential to scale to much finer resolution at high throughput. As such, this technique could meet the lithography needs for Si ULSI down to fundamental device limits. In the US, Lawrence Livermore, Sandia, and Lawrence Berkeley National Laboratories are participating in an industry funded research effort to evolve EUV technology and build a prototype camera for lithographic exposure. More recently, both Europe and Japan have initiated government/industry sponsored programs in EUVL development. This talk will focus on our program successes to date, and highlight some of the challenges that still lie ahead.

  8. Formation and properties of 3D metamaterial composites fabricated using nanometer scale laser lithography (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Prokes, Sharka M.; Perkins, Frank K.; Glembocki, Orest J.

    2015-08-01

    Metamaterials designed for the visible or near IR wavelengths require patterning on the nanometer scale. To achieve this, e-beam lithography is used, but it is extremely difficult and can only produce 2D structures. A new alternative technique to produce 2D and 3D structures involves laser fabrication using the Nanoscribe 3D laser lithography system. This is a direct laser writing technique which can form arbitrary 3D nanostructures on the nanometer scale and is based on multi-photon polymerization. We are creating 2D and 3D metamaterials via this technique, and subsequently conformally coating them using Atomic Layer Deposition of oxides and Ag. We will discuss the optical properties of these novel composite structures and their potential for dual resonant metamaterials.

  9. Microfabrication of pre-aligned fiber bundle couplers using ultraviolet lithography of SU-8.

    PubMed

    Yang, Ren; Soper, Steven A; Wang, Wanjun

    2006-01-01

    This paper describes the design, microfabrication and testing of a pre-aligned array of fiber couplers using direct UV-lithography of SU-8. The fiber coupler array includes an out-of-plane refractive microlens array and two fiberport collimator arrays. With the optical axis of the pixels parallel to the substrate, each pixel of the microlens array can be pre-aligned with the corresponding pixels of the fiberport collimator array as defined by the lithography mask design. This out-of-plane polymer 3D microlens array is pre-aligned with the fiber collimator arrays with no additional adjustment and assembly required, therefore, it helps to dramatically reduce the running cost and improve the alignment quality and coupling efficiency. In addition, the experimental results for the fiber couplers are also presented and analyzed.

  10. ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

    SciTech Connect

    Mendez-Torres, A.; Torres, R.; Lam, P.

    2011-07-15

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  11. ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS

    SciTech Connect

    Torres, R.; Mendez-Torres, A.; Lam, P.

    2011-06-09

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  12. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  13. Assessment of carbon layer growth induced by resists outgassing in multi e-beams lithography

    NASA Astrophysics Data System (ADS)

    Marusic, JC; Pourteau, ML; Cêtre, S.; Pain, L.; Mebiene-Engohang, AP; David, S.; Labau, S.; Boussey, J.

    2014-10-01

    The development of multiple e-beam lithography equipment is seen as an alternative for next generation lithography. However, similarly to EUV lithography, this technology faces important challenges in controlling the contamination of the optics due to deposition of carbon layer induced by the outgassed chemical species from resist under electron bombardment. An experimental setup was designed and built at LETI to study the outgassed species and observe the carbon layer. In this setup, resist coated wafers 100 mm size are exposed under a 5 kV e-beam gun. During exposure, byproducts from outgassed species are monitored with a Residual Gas Analyzer (RGA). The identification of outgassed chemical species is done with an ex-situ TD-GC-MS analysis (ThermoDesorption-Gaz Chromatography-Mass Spectrometry). In a second part of this investigation, we observed the contamination carbon layer growth induced by the outgassing. Thereby, we fabricated a device which consists of a silicon membrane with micro-machined apertures. During e-beam exposure, this device simulates the multiple parallel beams of the optic system of a maskless lithography tool. The deposited contamination layer on device is then observed and thickness measured under SEM. In this paper, we present the results of outgassing and contamination on 3 chemically amplified resists showing that contamination is not directly dependent of the overall outgassing rate but on first order of the outgassing from Photo Acid Generator (PAG). It also reports on the performance in reducing outgassing and contamination of applying a top-coat layer on top of the resist and shows that reduction is more important for contamination than for outgassing.

  14. Multilayer coatings of 10x projection for extreme-ultraviolet lithography

    SciTech Connect

    Folta, J A; Montcalm, C; Spiller, E; Wedowski, M

    1999-03-09

    Two new sets of projections optics for the prototype 10X reduction EUV lithography system were coated with Mo/Si multilayers. The coating thickness was graded across the optics by using shadow masks to ensure maximum throughput at all incidence angles in the camera. The overall deviation of the (normalized) wavelength response across the clear aperture of each mirror is below 0.01% RMS. However, the wavelength mismatch between two optics coated in different runs is up to 0.07 nm. Nevertheless, this is still within the allowed tolerances, and the predicted optical throughput loss in the camera due to such wavelength mismatch is about 4%. EUV reflectances of 63-65% were measured around 13.40 nm for the secondary optics, which is in good agreement with the expected reflectance based on the substrate finish as measured with AFM.

  15. Image-projection ion-beam lithography

    SciTech Connect

    Miller, P.A. )

    1989-09-01

    Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He{sup +} ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified.

  16. Film stacking architecture for immersion lithography process

    NASA Astrophysics Data System (ADS)

    Goto, Tomohiro; Sanada, Masakazu; Miyagi, Tadashi; Shigemori, Kazuhito; Kanaoka, Masashi; Yasuda, Shuichi; Tamada, Osamu; Asai, Masaya

    2008-03-01

    In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This study used a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. This evaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge. Patterning defects were improved with suitable film stacking.

  17. The next generation of maskless lithography

    NASA Astrophysics Data System (ADS)

    Diez, Steffen

    2016-02-01

    The essential goal for fast prototyping of microstructures is to reduce the cycle time. Conventional methods up to now consist of creating designs with a CAD software, then fabricating or purchasing a Photomask and finally using a mask aligner to transfer the pattern to the photoresist. The new Maskless Aligner (MLA) enables to expose the pattern directly without fabricating a mask, which results in a significantly shorter prototyping cycle. To achieve this short prototyping cycle, the MLA has been improved in many aspects compared to other direct write lithography solutions: exposure speed, user interface, ease of operation and flexibility.

  18. Wave and Particle in Molecular Interference Lithography

    SciTech Connect

    Juffmann, Thomas; Truppe, Stefan; Geyer, Philipp; Major, Andras G.; Arndt, Markus; Deachapunya, Sarayut; Ulbricht, Hendrik

    2009-12-31

    The wave-particle duality of massive objects is a cornerstone of quantum physics and a key property of many modern tools such as electron microscopy, neutron diffraction or atom interferometry. Here we report on the first experimental demonstration of quantum interference lithography with complex molecules. Molecular matter-wave interference patterns are deposited onto a reconstructed Si(111) 7x7 surface and imaged using scanning tunneling microscopy. Thereby both the particle and the quantum wave character of the molecules can be visualized in one and the same image. This new approach to nanolithography therefore also represents a sensitive new detection scheme for quantum interference experiments.

  19. Plasma formed ion beam projection lithography system

    DOEpatents

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  20. Focusing far-field nanoscale optical needles by planar nanostructured metasurfaces

    NASA Astrophysics Data System (ADS)

    Liu, Tao; Wang, Tong; Yang, Shuming; Jiang, Zhuangde

    2016-08-01

    Far-field nanoscale optical needles are obtained using water-immersed planar nanostructured metasurfaces illuminated with a 193 nm deep ultra-violet laser. The method is based on the vectorial angular spectrum theory and an established nonlinear optimization model. For a 50 μm-diameter metasurface with a linearly polarized beam (x-polarized), an optical needle with 12.4λ0 length has been produced at a mid-focal distance of 14.5 μm. The transverse beam sizes are as small as 129 nm and 59.4 nm in the x and y directions, respectively. The design results are agreed well with the rigorous electromagnetic calculations using three-dimensional finite-difference time-domain (FDTD) method with a suggested 25 nm-thick aluminum coating film for the metasurface. These far-field nanoscale optical needles are potentially applied in the fields of nanolithography, nanoprinting, and nanoscopy.

  1. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing.

    PubMed

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices. PMID:26233395

  2. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    SciTech Connect

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven Reitzenstein, Stephan; Strittmatter, André

    2015-07-15

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  3. Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

    NASA Astrophysics Data System (ADS)

    Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

    2015-07-01

    We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

  4. Improve large area uniformity and production capacity of laser interference lithography with beam flattening device

    NASA Astrophysics Data System (ADS)

    Yang, Yin-Kuang; Wu, Yu-Xiang; Lin, Te-Hsun; Yu, Chun-Wen; Fu, Chien-Chung

    2016-03-01

    Laser interference lithography (LIL) is a maskless lithography technique with many advantages such as simple optical design, inexpensive, infinite depth of focus, and large area patterning with single exposure. However, the intensity of normal laser beam is Gaussian distribution. In order to obtain large area uniform structure, we have to expand the laser beam much bigger than the wafer and use only the center part of the beam. Resulting in wasting lots of energy and the production capacity decrease. In this study, we designed a beam shaping device which consists of two parallel fused silicon optical window with different coating on both side. Two optical window form an air thin film. When the expanded laser beam pass through the device, the beam will experience many refraction and reflection between two optical window and interference with each other. The transmittance of laser beam will depend on the incident angle. The output intensity distribution will change from Gaussian distribution to a flat top distribution. In our experiment, we combined the beam shaping device with a Lloyd's mirror LIL system. Experiment results indicated that the LIL system with beam shaping device can obtain large area uniform pattern. And compare with the traditional Lloyd's mirror LIL system, the exposure time is shorten up to 4.5 times. In conclusion, this study design a beam flattening device for LIL system. The flat top beam can improve the large area uniformity and the production capacity of LIL. Making LIL more suitable for industry application.

  5. Deep-etch x-ray lithography at the ALS: First results

    SciTech Connect

    Malek, C.K.; Jackson, K.H.; Brennen, R.A.

    1997-04-01

    The fabrication of high-aspect-ratio and three-dimensional (3D) microstructures is of increasing interest in a multitude of applications in fields such as micromechanics, optics, and interconnect technology. Techniques and processes that enable lithography in thick materials differ from the planar technologies used in standard integrated circuit processing. Deep x-ray lithography permits extremely precise and deep proximity printing of a given pattern from a mask into a very thick resist. It requires a source of hard, intense, and well collimated x-ray radiation, as is provided by a synchrotron radiation source. The thick resist microstructures, so produced can be used as templates from which ultrahigh precision parts with high aspect ratios can be mass-produced out of a large variety of materials (metals, plastics, ceramics). This whole series of techniques and processes has been historically referred to as {open_quotes}LIGA,{close_quotes} from the German acronym for lithography, electroforming (Galvanoformung), and plastic molding (Abformung), the first development of the basic LIGA process having been performed at the Nuclear Research Center at Karlsruhe in Germany.

  6. Laser direct write system for fabricating seamless roll-to-roll lithography tools

    NASA Astrophysics Data System (ADS)

    Petrzelka, Joseph E.; Hardt, David E.

    2013-03-01

    Implementations of roll to roll contact lithography require new approaches towards manufacturing tooling, including stamps for roll to roll nanoimprint lithography (NIL) and soft lithography. Suitable roll based tools must have seamless micro- or nano-scale patterns and must be scalable to roll widths of one meter. The authors have developed a new centrifugal stamp casting process that can produce uniform cylindrical polymer stamps in a scalable manner. The pattern on the resulting polymer tool is replicated against a corresponding master pattern on the inner diameter of a centrifuge drum. This master pattern is created in photoresist using a UV laser direct write system. This paper discusses the design and implementation of a laser direct write system targeting the internal diameter of a rotating drum. The design uses flying optics to focus a laser beam along the axis of the centrifuge drum and to redirect the beam towards the drum surface. Experimental patterning results show uniform coatings of negative photoresist in the centrifuge drum that are effectively patterned with a 405 nm laser diode. Seamless patterns are shown to be replicated in a 50 mm diameter, 60 mm long cylindrical stamp made from polydimethylsiloxane (PDMS). Direct write results show gratings with line widths of 10 microns in negative photoresist. Using an FPGA, the laser can be accurately timed against the centrifuge encoder to create complex patterns.

  7. Lifetime studies of Mo/Si and Mo/Be multilayer coatings for extreme ultraviolet lithography

    SciTech Connect

    Bajt, S; Clift, W M; Folta, J A; Gullikson, E M; Klebanoff, L E; Kleineberg, U; Malinowski, M E; Wedowski, M

    1999-08-05

    Extreme Ultraviolet Lithography (EUVL) is a candidate for future application by the semiconductor industry in the production of sub-100 nm feature sizes in integrated circuits. Using multilayer reflective coatings optimized at wavelengths ranging from 11 to 14 nm, EUVL represents a potential successor to currently existing optical lithography techniques. In order to assess lifetimes of the multilayer coatings under realistic conditions, a series of radiation stability tests has been performed. In each run a dose of EUV radiation equivalent to several months of lithographic operation was applied to Mo/Si and MO/Be multilayer coatings within a few days. Depending on the residual gas concentration in the vacuum environment, surface deposition of carbon during the exposure lead to losses in the multilayer reflectivity. However, in none of the experimental runs was structural damage within the bulk of the multilayers observed. Mo/Si multilayer coatings recovered their full original reflectivity after removal of the carbon layer by an ozone cleaning method. Auger depth profiling on MO/Be multilayers indicate that carbon penetrated into the Be top layer during illumination with high doses of EUV radiation. Subsequent ozone cleaning fully removed the carbon, but revealed enhanced oxidation of the area illuminated, which led to an irreversible loss in reflectance on the order of 1%. Keywords: Extreme ultraviolet (EUV) lithography, multilayer reflective coatings, radiation stability, surface contamination

  8. High-resolution and large-area nanoparticle arrays using EUV interference lithography.

    PubMed

    Karim, Waiz; Tschupp, Simon Andreas; Oezaslan, Mehtap; Schmidt, Thomas J; Gobrecht, Jens; van Bokhoven, Jeroen A; Ekinci, Yasin

    2015-04-28

    Well-defined model systems are needed for better understanding of the relationship between optical, electronic, magnetic, and catalytic properties of nanoparticles and their structure. Chemical synthesis of metal nanoparticles results in large size and shape dispersion and lack of lateral order. In contrast, conventional top-down lithography techniques provide control over the lateral order and dimensions. However, they are either limited in resolution or have low throughput and therefore do not enable the large patterning area needed to obtain good signal-to-noise ratio in common analytical and characterization techniques. Extreme ultraviolet (EUV) lithography has the throughput and simplicity advantages of photolithography as well as high resolution due to its wavelength. Using EUV achromatic Talbot lithography, we have obtained 15 nm particle arrays with a periodicity of about 100 nm over an area of several square centimeters with high-throughput enabling the use of nanotechnology for fabrication of model systems to study large ensembles of well-defined identical nanoparticles with a density of 10(10) particles cm(-2). PMID:25826457

  9. Two photon polymerization lithography for 3D microfabrication of single wall carbon nanotube/polymer composites

    NASA Astrophysics Data System (ADS)

    Ushiba, Shota; Shoji, Satoru; Kuray, Preeya; Masui, Kyoko; Kono, Junichiro; Kawata, Satoshi

    2013-03-01

    Two photon polymerization (TPP) lithography has been established as a powerful tool to develop 3D fine structures of polymer materials, opening up a wide range applications such as micro-electromechanical systems (MEMS). TPP lithography is also promising for 3D micro fabrication of nanocomposites embedded with nanomaterials such as metal nanoparticles. Here, we make use of TPP lithography to fabricate 3D micro structural single wall carbon nanotube (SWCNT)/polymer composites. SWCNTs exhibit remarkable mechanical, electrical, thermal and optical properties, which leads to enhance performances of polymers by loading SWCNTs. SWCNTs were uniformly dispersed in an acrylate UV-curable monomer including a few amounts of photo-initiator and photo-sensitizer. A femtosecond pulsed laser emitting at 780 nm was focused onto the resin, resulting in the photo-polymerization of a nanometric volume of the resin through TPP. By scanning the focus spot three dimensionally, arbitrary 3D structures were created. The spatial resolution of the fabrication was sub-micrometer, and SWCNTs were embedded in the sub-micro sized structures. The fabrication technique enables one to fabricate 3D micro structural SWCNT/polymer composites into desired shapes, and thus the technique should open up the further applications of SWCNT/polymer composites such as micro sized photomechanical actuators.

  10. Economic consequences of high throughput maskless lithography

    NASA Astrophysics Data System (ADS)

    Hartley, John G.; Govindaraju, Lakshmi

    2005-11-01

    Many people in the semiconductor industry bemoan the high costs of masks and view mask cost as one of the significant barriers to bringing new chip designs to market. All that is needed is a viable maskless technology and the problem will go away. Numerous sites around the world are working on maskless lithography but inevitably, the question asked is "Wouldn't a one wafer per hour maskless tool make a really good mask writer?" Of course, the answer is yes, the hesitation you hear in the answer isn't based on technology concerns, it's financial. The industry needs maskless lithography because mask costs are too high. Mask costs are too high because mask pattern generators (PG's) are slow and expensive. If mask PG's become much faster, mask costs go down, the maskless market goes away and the PG supplier is faced with an even smaller tool demand from the mask shops. Technical success becomes financial suicide - or does it? In this paper we will present the results of a model that examines some of the consequences of introducing high throughput maskless pattern generation. Specific features in the model include tool throughput for masks and wafers, market segmentation by node for masks and wafers and mask cost as an entry barrier to new chip designs. How does the availability of low cost masks and maskless tools affect the industries tool makeup and what is the ultimate potential market for high throughput maskless pattern generators?

  11. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  12. Inverse lithography source optimization via compressive sensing.

    PubMed

    Song, Zhiyang; Ma, Xu; Gao, Jie; Wang, Jie; Li, Yanqiu; Arce, Gonzalo R

    2014-06-16

    Source optimization (SO) has emerged as a key technique for improving lithographic imaging over a range of process variations. Current SO approaches are pixel-based, where the source pattern is designed by solving a quadratic optimization problem using gradient-based algorithms or solving a linear programming problem. Most of these methods, however, are either computational intensive or result in a process window (PW) that may be further extended. This paper applies the rich theory of compressive sensing (CS) to develop an efficient and robust SO method. In order to accelerate the SO design, the source optimization is formulated as an underdetermined linear problem, where the number of equations can be much less than the source variables. Assuming the source pattern is a sparse pattern on a certain basis, the SO problem is transformed into a l1-norm image reconstruction problem based on CS theory. The linearized Bregman algorithm is applied to synthesize the sparse optimal source pattern on a representation basis, which effectively improves the source manufacturability. It is shown that the proposed linear SO formulation is more effective for improving the contrast of the aerial image than the traditional quadratic formulation. The proposed SO method shows that sparse-regularization in inverse lithography can indeed extend the PW of lithography systems. A set of simulations and analysis demonstrate the superiority of the proposed SO method over the traditional approaches.

  13. Development of Nanosphere Lithography Technique with Enhanced Lithographical Accuracy on Periodic Si Nanostructure for Thin Si Solar Cell Application

    NASA Astrophysics Data System (ADS)

    Choi, Jeayoung

    In this thesis, a novel silica nanosphere (SNS) lithography technique has been developed to offer a fast, cost-effective, and large area applicable nano-lithography approach. The SNS can be easily deposited with a simple spin-coating process after introducing a N,N-dimethyl-formamide (DMF) solvent which can produce a highly close packed SNS monolayer over large silicon (Si) surface area, since DMF offers greatly improved wetting, capillary and convective forces in addition to slow solvent evaporation rate. Since the period and dimension of the surface pattern can be conveniently changed and controlled by introducing a desired size of SNS, and additional SNS size reduction with dry etching process, using SNS for lithography provides a highly effective nano-lithography approach for periodically arrayed nano-/micro-scale surface patterns with a desired dimension and period. Various Si nanostructures ( i.e., nanopillar, nanotip, inverted pyramid, nanohole) are successfully fabricated with the SNS nano-lithography technique by using different etching technique like anisotropic alkaline solution (i.e., KOH) etching, reactive-ion etching (RIE), and metal-assisted chemical etching (MaCE). In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption

  14. Segmented waveguide array gratings made by electron beam lithography

    NASA Astrophysics Data System (ADS)

    Grondin, Etienne; Genest, Jonathan; Duguay, Michel A.; Beauvais, Jacques; Aimez, Vincent

    2006-09-01

    We have designed and studied the fabrication limitations for a new type of optical waveguide filter based on the concept of a "Segmented Waveguide Array Grating" (SWAG, see refs. 1,2). The idea is to make an optical waveguide consisting of a large number of segments which differ from each other by their precise length and by a precise change in one of their transverse dimensions. The transitions between different segments are abrupt in the transverse dimension on the scale of one tenth the wavelength of light in the medium and are positioned with nanometer precision along the propagation axis of light. Reflections from a given subset of these transitions add up coherently and can give a grating-like reflection spectrum. By precisely positioning the segment transitions and by setting the variable transverse dimension at precise values one can design a large variety of filtering functions. As an example we have designed a filtering function that has a nearly rectangular profile, something that would be very useful in applications of WDM optical communications. The light scattering losses at segment transitions can be minimized by choosing average transverse dimensions such that the waveguide operates near the diffraction minimum. The lithography step of simple planar SWAG devices has been carried out by means of electron beam direct writing. The waveguide materials used were 6-micron thick silica/germania layers (index 1.454) spaced from a silicon substrate by a 14-micron thick pure silica layer. Trapped electron phenomena in the silica layer were eliminated by depositing metal layers on top of the silica in order to stop electrons traversing the photoresist. SWAG patterns with sharp features were obtained and are expected to give the expected spectral filtering functions.

  15. 0.33-k1 ArF lithography for 100-nm DRAM

    NASA Astrophysics Data System (ADS)

    Bok, Cheol-Kyu; Kim, Seok-Kyun; Kim, Hee-Bom; Oh, Jin-Sung; Ahn, Chang-Nam; Shin, Ki-Soo

    2002-07-01

    We have evaluated 0.33k1 ArF lithography using 0.63NA scanner to develop 100 nm DRAM. ArF resist problems were resist pattern shrinkage during CD SEM measurement, resist pattern collapse during wet development and poor etch resistance. Off-Site Measurement (OSM) method has been developed for decreasing pattern shrinkage. With OSM method, 8nm of CD shrinkage was down to 2nm for 100nm L/S patterns. We have found a proper BARC material that prevents resist patterns falling down. Lack of etch resistance was compensated by hard mask. With W/SiN hard mask, acrylate- type resist patterns were transferred well into W/poly-Si gate patterns. We have simulated process window of critical DRAM cell patterns (isolation, gate, bit line contact, storage node) in the simple off-axis illumination (OAI) and optical proximity correction (OPC) conditions based on single exposure. Simulation results were verified by lithography tests and it turned out that 0.33k1 process was possible with exposure latitude of above 10% and focus latitude of more than 0.4 micrometers . 0.33k1 ArF lithography was successfully implemented into 100 nm DRAM with CD uniformity of 10nm (3 (sigma) ) and overlay accuracy of 30 nm (mean +3 (sigma) ). We have also evaluated double exposure technique using dipole illumination targeting 90 nm in order to see the possibility of 0.29k1 process. 0.29k1 process was also likely to be possible, although some specific improvements were recommended for the wider process window. From the simulation and resist patterning results, we believe that 0.85 NA lens will be able to extend ArF lithography into 75 nm by single exposure technology using crosspole illumination (0.33k1 process) and 65 nm by double exposure technology using dipole and crosspole illumination (0.29k1 process).

  16. New data postprocessing for e-beam projection lithography

    NASA Astrophysics Data System (ADS)

    Okamoto, Kazuya; Kamijo, Koichi; Kojima, Shinichi; Minami, Hideyuki; Okino, Teruaki

    2001-08-01

    In electron beam projection lithography (EPL), one of the most crucial tasks is to develop a data post-processing system, namely, a specific tool to expose a faithful pattern for every subfield on the wafer based on the pattern layout data. This system includes two basic flows. The 1st flow is common for reticle fabrication, and the 2nd flow is unique for EPL. During the 2nd flow, based on the LSI pattern data, electron optics space-charge effect correction will be automatically and rapidly executed and output to the EPL system in order to adjust parameters such as focus, magnification, rotation and astigmatism. In addition, this system should perform such tasks as segmentations of subfields (including complementary division), arrangement of stripes and reticlets, and alignment mark insertion. For proximity effect correction, we will first use a pattern shape modulation first. Shape modification at stitching boundaries is also investigated. In summary, to achieve conformable EPL delivery to customers, a new data post- processing system is developed in collaboration with some suppliers.

  17. Plasma and Radiation Modelling of EUV Sources for Micro Lithography

    NASA Astrophysics Data System (ADS)

    Kruecken, Thomas

    2007-04-01

    Future extreme ultraviolet (EUV) lithography will require very high radiation intensities in a narrow wavelength range around 13.5 nm, which is most efficiently emitted as line radiation by highly ionized heavy particles. Currently the most intense EUV sources are based on Xenon or Tin discharges. After having investigated the limits of a hollow cathode triggered Xenon pinch discharge a Laser triggered Tin vacuum spark discharge is favored by Philips Extreme UV. Plasma and radiation properties of these highly transient discharges will be compared. Besides simple MHD-models the ADAS software package has been used to generate important atomic and spectral data of the relevant ion stages. To compute excitation and radiation properties, collisional radiative equilibria of individual ion stages are computed. For many lines opacity effects cannot be neglected. The optical depths, however, allow for a treatment based on escape factors. Due to the rapid change of plasma parameters the abundances of the different ionization stages must be computed dynamically. This requires effective ionization and recombination rates, which can also be supplied by ADAS.

  18. Plasma and Radiation Modelling of EUV Sources for Micro Lithography

    SciTech Connect

    Kruecken, Thomas

    2007-04-06

    Future extreme ultraviolet (EUV) lithography will require very high radiation intensities in a narrow wavelength range around 13.5 nm, which is most efficiently emitted as line radiation by highly ionized heavy particles. Currently the most intense EUV sources are based on Xenon or Tin discharges. After having investigated the limits of a hollow cathode triggered Xenon pinch discharge a Laser triggered Tin vacuum spark discharge is favored by Philips Extreme UV.Plasma and radiation properties of these highly transient discharges will be compared. Besides simple MHD-models the ADAS software package has been used to generate important atomic and spectral data of the relevant ion stages. To compute excitation and radiation properties, collisional radiative equilibria of individual ion stages are computed. For many lines opacity effects cannot be neglected. The optical depths, however, allow for a treatment based on escape factors. Due to the rapid change of plasma parameters the abundances of the different ionization stages must be computed dynamically. This requires effective ionization and recombination rates, which can also be supplied by ADAS.

  19. Quantum dots-nanogap metamaterials fabrication by self-assembly lithography and photoluminescence studies.

    PubMed

    Tripathi, Laxmi Narayan; Kang, Taehee; Bahk, Young-Mi; Han, Sanghoon; Choi, Geunchang; Rhie, Jiyeah; Jeong, Jeeyoon; Kim, Dai-Sik

    2015-06-01

    We present a new and versatile technique of self-assembly lithography to fabricate a large scale Cadmium selenide quantum dots-silver nanogap metamaterials. After optical and electron microscopic characterizations of the metamaterials, we performed spatially resolved photoluminescence transmission measurements. We obtained highly quenched photoluminescence spectra compared to those from bare quantum dots film. We then quantified the quenching in terms of an average photoluminescence enhancement factor. A finite difference time domain simulation was performed to understand the role of an electric field enhancement in the nanogap over this quenching. Finally, we interpreted the mechanism of the photoluminescence quenching and proposed fabrication method of new metamaterials using our technique.

  20. Oxidation resistance and microstructure of Ru-capped extreme ultraviolet lithography multilayers

    SciTech Connect

    Bajt, S; Dai, Z; Nelson, E J; Wall, M A; Alameda, J B; Nguyen, N; Baker, S L; Robinson, J C; Taylor, J S; Aquila, A; Edwards, N V

    2005-06-15

    The oxidation resistance of protective capping layers for extreme ultraviolet lithography (EUVL) multilayers depends on their microstructure. Differently prepared Ru-capping layers, deposited on Mo/Si EUVL multilayers, were investigated to establish their baseline structural, optical, and surface properties in as-deposited state. The same capping layer structures were then tested for their thermal stability and oxidation resistance. The best performing Ru-capping layer structure was analyzed in detail with transmission electron microscopy (TEM). As compared to other Ru capping layers preparations studied here it is the only one that shows grains with preferential orientation. This information is essential for modeling and performance optimization of EUVL multilayers.

  1. Dual metamaterial structures generated from an one-step fabrication using stencil lithography

    NASA Astrophysics Data System (ADS)

    Leong, Eunice S. P.; Deng, J.; Liu, Y. J.; Teng, J. H.

    2014-09-01

    The flexibility to deposit metallic structures on any substrates without the need of lift-off or etching process are the main reasons for the recent popularity of using stencil lithography for plasmonic applications. In this work, we fabricate nanoholes on a Si3N4 membrane and deposit metal-dielectric layers and such approach allows us to have a perforated fishnet metamaterial structure on the membrane as well as its complementary pillar structure on a quartz substrate. We then studied and compared their optical properties from both experiment and simulation results.

  2. Diffraction spectral filter for use in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Tichenor, Daniel A.; Bernardez, Luis J.

    2002-01-01

    A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

  3. Imaging based optofluidic air flow meter with polymer interferometers defined by soft lithography.

    PubMed

    Song, Wuzhou; Psaltis, Demetri

    2010-08-01

    We present an optofluidic chip with integrated polymer interferometers for measuring both the microfluidic air pressure and flow rate. The chip contains a microfluidic circuit and optical cavities on a polymer which was defined by soft lithography. The pressure can be read out by imaging the interference patterns of the cavities. The air flow rate was then calculated from the differential pressure across a microfluidic Venturi circuit. Air flow rate measurement in the range of 0-2mg/second was demonstrated. This device provides a simple and versatile way for in situ measuring the microscale air pressure and flow on chip.

  4. Grayscale gel lithography for programmed buckling of non-Euclidean hydrogel plates.

    PubMed

    Na, Jun-Hee; Bende, Nakul P; Bae, Jinhye; Santangelo, Christian D; Hayward, Ryan C

    2016-06-14

    Shape programmable materials capable of morphing from a flat sheet into controlled three dimensional (3D) shapes offer promise in diverse areas including soft robotics, tunable optics, and bio-engineering. We describe a simple method of 'grayscale gel lithography' that relies on a digital micromirror array device (DMD) to control the dose of ultraviolet (UV) light, and therefore the extent of swelling of a photocrosslinkable poly(N-isopropyl acrylamide) (PNIPAm) copolymer film, with micrometer-scale spatial resolution. This approach allows for effectively smooth profiles of swelling to be prescribed, enabling the preparation of buckled 3D shapes with programmed Gaussian curvature. PMID:27169886

  5. NiMnGa nanostructures produced by electron beam lithography and Ar-ion etching

    NASA Astrophysics Data System (ADS)

    Auernhammer, D.; Schmitt, M.; Ohtsuka, M.; Kohl, M.

    2008-05-01

    The technologies of electron beam lithography, dry etching and systems integration are investigated to fabricate a series of Ni-Mn-Ga double-beam structures designed with decreasing critical dimensions of 10 μm, 1 μm and 400 nm. Ni-Mn-Ga thin films of 1 μm thickness are deposited by magnetron sputtering and heat-treated in free-standing condition after selective removal of the substrate. Differential scanning calorimetry and electrical resistance measurements on the films show the characteristic features of martensitic transformation above room temperature. First optical beam deflection experiments demonstrate the magnetic and thermal actuation performance of the double-beam structures.

  6. Imaging based optofluidic air flow meter with polymer interferometers defined by soft lithography.

    PubMed

    Song, Wuzhou; Psaltis, Demetri

    2010-08-01

    We present an optofluidic chip with integrated polymer interferometers for measuring both the microfluidic air pressure and flow rate. The chip contains a microfluidic circuit and optical cavities on a polymer which was defined by soft lithography. The pressure can be read out by imaging the interference patterns of the cavities. The air flow rate was then calculated from the differential pressure across a microfluidic Venturi circuit. Air flow rate measurement in the range of 0-2mg/second was demonstrated. This device provides a simple and versatile way for in situ measuring the microscale air pressure and flow on chip. PMID:20721045

  7. Hybrid hotspot detection using regression model and lithography simulation

    NASA Astrophysics Data System (ADS)

    Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki; Pan, David Z.

    2016-03-01

    As minimum feature sizes shrink, unexpected hotspots appear on wafers. Therefore, it is important to detect and fix these hotspots at design stage to reduce development time and manufacturing cost. Currently, as the most accurate approach, lithography simulation is widely used to detect such hotspots. However, it is known to be time-consuming. This paper proposes a novel aerial image synthesizing method using regression and minimum lithography simulation for only hotspot detection. Experimental results show hotspot detection on the proposed method is equivalent compared with the results on the conventional hotspot detection method which uses only lithography simulation with much less computational cost.

  8. Workshop on compact storage ring technology: applications to lithography

    SciTech Connect

    Not Available

    1986-05-30

    Project planning in the area of x-ray lithography is discussed. Three technologies that are emphasized are the light source, the lithographic technology, and masking technology. The needs of the semiconductor industry in the lithography area during the next decade are discussed, particularly as regards large scale production of high density dynamic random access memory devices. Storage ring parameters and an overall exposure tool for x-ray lithography are addressed. Competition in this area of technology from Germany and Japan is discussed briefly. The design of a storage ring is considered, including lattice design, magnets, and beam injection systems. (LEW)

  9. Lithography aspects of dual-damascene interconnect technology

    NASA Astrophysics Data System (ADS)

    Maenhoudt, Mireille; Van Goidsenhoven, Diziana; Pollentier, Ivan K.; Ronse, Kurt G.; Lepage, Muriel; Struyf, Herbert; Van Hove, Marleen

    2001-04-01

    The introduction of Cu and low-k dielectrics in back-end-of- line processes has serious implications for lithography. Different low-k material shave different reflective properties and also the potential use of hard masks has consequences for lithography. Furthermore, depending on the integration scheme that is chosen, various issues for lithography and etch are showing up. While the first photo step is on a planar substrate, the second photo has to cover a topography. This can have large implications on CD uniformity and the amount of material left for the subsequent etch.

  10. Nanosphere lithography for improved absorption in thin crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Chang, Yuanchih; Payne, David N. R.; Pollard, Michael E.; Pillai, Supriya; Bagnall, Darren M.

    2015-12-01

    Over the last decade, plasmonic nanoparticle arrays have been extensively studied for their light trapping potential in thin film solar cells. However, the commercial use of such arrays has been limited by complex and expensive fabrication techniques such as e-beam lithography. Nanosphere lithography (NSL) is a promising low-cost alternative for forming regular arrays of nanoscale features. Here, we use finite-difference time-domain (FDTD) simulations to determine the optical enhancement due to nanosphere arrays embedded at the rear of a complete thin film device. Array parameters including the nanosphere pitch and diameter are explored, with the FDTD model itself first validated by comparing simulations of Ag nanodisc arrays with optical measurements of pre-existing e-beam fabricated test structures. These results are used to guide the development of a nanosphere back-reflector for 20 μm thin crystalline silicon cells. The deposition of polystyrene nanosphere monolayers is optimized to provide uniform arrays, which are subsequently incorporated into preliminary, proof of concept device structures. Absorption and photoluminescence measurements clearly demonstrate the potential of nanosphere arrays for improving the optical response of a solar cell using economical and scalable methods.

  11. High-Throughput Fabrication of Resonant Metamaterials with Ultrasmall Coaxial Apertures via Atomic Layer Lithography

    PubMed Central

    2016-01-01

    We combine atomic layer lithography and glancing-angle ion polishing to create wafer-scale metamaterials composed of dense arrays of ultrasmall coaxial nanocavities in gold films. This new fabrication scheme makes it possible to shrink the diameter and increase the packing density of 2 nm-gap coaxial resonators, an extreme subwavelength structure first manufactured via atomic layer lithography, both by a factor of 100 with respect to previous studies. We demonstrate that the nonpropagating zeroth-order Fabry-Pérot mode, which possesses slow light-like properties at the cutoff resonance, traps infrared light inside 2 nm gaps (gap volume ∼ λ3/106). Notably, the annular gaps cover only 3% or less of the metal surface, while open-area normalized transmission is as high as 1700% at the epsilon-near-zero (ENZ) condition. The resulting energy accumulation alongside extraordinary optical transmission can benefit applications in nonlinear optics, optical trapping, and surface-enhanced spectroscopies. Furthermore, because the resonance wavelength is independent of the cavity length and dramatically red shifts as the gap size is reduced, large-area arrays can be constructed with λresonance ≫ period, making this fabrication method ideal for manufacturing resonant metamaterials. PMID:26910363

  12. High-Throughput Fabrication of Resonant Metamaterials with Ultrasmall Coaxial Apertures via Atomic Layer Lithography.

    PubMed

    Yoo, Daehan; Nguyen, Ngoc-Cuong; Martin-Moreno, Luis; Mohr, Daniel A; Carretero-Palacios, Sol; Shaver, Jonah; Peraire, Jaime; Ebbesen, Thomas W; Oh, Sang-Hyun

    2016-03-01

    We combine atomic layer lithography and glancing-angle ion polishing to create wafer-scale metamaterials composed of dense arrays of ultrasmall coaxial nanocavities in gold films. This new fabrication scheme makes it possible to shrink the diameter and increase the packing density of 2 nm-gap coaxial resonators, an extreme subwavelength structure first manufactured via atomic layer lithography, both by a factor of 100 with respect to previous studies. We demonstrate that the nonpropagating zeroth-order Fabry-Pérot mode, which possesses slow light-like properties at the cutoff resonance, traps infrared light inside 2 nm gaps (gap volume ∼ λ(3)/10(6)). Notably, the annular gaps cover only 3% or less of the metal surface, while open-area normalized transmission is as high as 1700% at the epsilon-near-zero (ENZ) condition. The resulting energy accumulation alongside extraordinary optical transmission can benefit applications in nonlinear optics, optical trapping, and surface-enhanced spectroscopies. Furthermore, because the resonance wavelength is independent of the cavity length and dramatically red shifts as the gap size is reduced, large-area arrays can be constructed with λresonance ≫ period, making this fabrication method ideal for manufacturing resonant metamaterials.

  13. Vapor deposited release layers for nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Tong; Kobrin, Boris; Wanebo, Mike; Nowak, Romek; Yi, Richard; Chinn, Jeff; Bender, Markus; Fuchs, Andreas; Otto, Martin

    2006-03-01

    This paper presents the advantages of using a vapor deposited self-assembled monolayer (SAM) as a mold release layer for nano-imprint lithography. The release SAM was formed from a perfluorinated organo-silane precursor at room temperature in the gaseous state by a technique called Molecular Vapor Deposition (MVD TM). In contrast to a conventional coating from a liquid immersion sequence, the vapor deposition process forms a particulate free film resulting in a substantial reduction of surface defects. Another advantage of the vapor process is its excellent conformity onto the nanoscale topography of the mold. The self-assembling and self-limiting characteristics of the MVD process enables excellent CD control of the mold pattern. Pattern replication as small as 38nm features was achieved. Various other quantitative metrics of the MVD release layer are presented in this paper.

  14. Inverse lithography using sparse mask representations

    NASA Astrophysics Data System (ADS)

    Ionescu, Radu C.; Hurley, Paul; Apostol, Stefan

    2015-03-01

    We present a novel optimisation algorithm for inverse lithography, based on optimization of the mask derivative, a domain inherently sparse, and for rectilinear polygons, invertible. The method is first developed assuming a point light source, and then extended to general incoherent sources. What results is a fast algorithm, producing manufacturable masks (the search space is constrained to rectilinear polygons), and flexible (specific constraints such as minimal line widths can be imposed). One inherent trick is to treat polygons as continuous entities, thus making aerial image calculation extremely fast and accurate. Requirements for mask manufacturability can be integrated in the optimization without too much added complexity. We also explain how to extend the scheme for phase-changing mask optimization.

  15. Femtolitre chemistry assisted by microfluidic pen lithography

    PubMed Central

    Carbonell, Carlos; Stylianou, Kyriakos C.; Hernando, Jordi; Evangelio, Emi; Barnett, Sarah A.; Nettikadan, Saju; Imaz, Inhar; Maspoch, Daniel

    2013-01-01

    Chemical reactions at ultrasmall volumes are becoming increasingly necessary to study biological processes, to synthesize homogenous nanostructures and to perform high-throughput assays and combinatorial screening. Here we show that a femtolitre reaction can be realized on a surface by handling and mixing femtolitre volumes of reagents using a microfluidic stylus. This method, named microfluidic pen lithography, allows mixing reagents in isolated femtolitre droplets that can be used as reactors to conduct independent reactions and crystallization processes. This strategy overcomes the high-throughput limitations of vesicles and micelles and obviates the usually costly step of fabricating microdevices and wells. We anticipate that this process enables performing distinct reactions (acid-base, enzymatic recognition and metal-organic framework synthesis), creating multiplexed nanoscale metal-organic framework arrays, and screening combinatorial reactions to evaluate the crystallization of novel peptide-based materials. PMID:23863998

  16. Lithography process window analysis with calibrated model

    NASA Astrophysics Data System (ADS)

    Zhou, Wenzhan; Yu, Jin; Lo, James; Liu, Johnson

    2004-05-01

    As critical-dimension shrink below 0.13 μm, the SPC (Statistical Process Control) based on CD (Critical Dimension) control in lithography process becomes more difficult. Increasing requirements of a shrinking process window have called on the need for more accurate decision of process window center. However in practical fabrication, we found that systematic error introduced by metrology and/or resist process can significantly impact the process window analysis result. Especially, when the simple polynomial functions are used to fit the lithographic data from focus exposure matrix (FEM), the model will fit these systematic errors rather than filter them out. This will definitely impact the process window analysis and determination of the best process condition. In this paper, we proposed to use a calibrated first principle model to do process window analysis. With this method, the systematic metrology error can be filtered out efficiently and give a more reasonable window analysis result.

  17. Nanoimprint lithography using disposable biomass template

    NASA Astrophysics Data System (ADS)

    Hanabata, Makoto; Takei, Satoshi; Sugahara, Kigen; Nakajima, Shinya; Sugino, Naoto; Kameda, Takao; Fukushima, Jiro; Matsumoto, Yoko; Sekiguchi, Atsushi

    2016-04-01

    A novel nanoimprint lithography process using disposable biomass template having gas permeability was investigated. It was found that a disposable biomass template derived from cellulose materials shows an excellent gas permeability and decreases transcriptional defects in conventional templates such as quartz, PMDS, DLC that have no gas permeability. We believe that outgasses from imprinted materials are easily removed through the template. The approach to use a cellulose for template material is suitable as the next generation of clean separation technology. It is expected to be one of the defect-less thermal nanoimprint lithographic technologies. It is also expected that volatile materials and solvent including materials become available that often create defects and peelings in conventional temples that have no gas permeability.

  18. Integrating nanosphere lithography in device fabrication

    NASA Astrophysics Data System (ADS)

    Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

    2016-03-01

    This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

  19. Benchtop micromolding of polystyrene by soft lithography.

    PubMed

    Wang, Yuli; Balowski, Joseph; Phillips, Colleen; Phillips, Ryan; Sims, Christopher E; Allbritton, Nancy L

    2011-09-21

    Polystyrene (PS), a standard material for cell culture consumable labware, was molded into microstructures with high fidelity of replication by an elastomeric polydimethylsiloxane (PDMS) mold. The process was a simple, benchtop method based on soft lithography using readily available materials. The key to successful replica molding by this simple procedure relies on the use of a solvent, for example, gamma-butyrolactone, which dissolves PS without swelling the PDMS mold. PS solution was added to the PDMS mold, and evaporation of the solvent was accomplished by baking the mold on a hotplate. Microstructures with feature sizes as small as 3 μm and aspect ratios as large as 7 were readily molded. Prototypes of microfluidic chips made from PS were prepared by thermal bonding of a microchannel molded in PS with a flat PS substrate. The PS microfluidic chip displayed much lower adsorption and absorption of hydrophobic molecules (e.g. rhodamine B) compared to a comparable chip created from PDMS. The molded PS surface exhibited stable surface properties after plasma oxidation as assessed by contact angle measurement. The molded, oxidized PS surface remained an excellent surface for cell culture based on cell adhesion and proliferation. To demonstrate the application of this process for cell biology research, PS was micromolded into two different microarray formats, microwells and microposts, for segregation and tracking of non-adherent and adherent cells, respectively. The micromolded PS possessed properties that were ideal for biological and bioanalytical needs, thus making it an alternative material to PDMS and suitable for building lab-on-a-chip devices by soft lithography methods.

  20. Corner rounding and line-end shortening in optical lithography

    NASA Astrophysics Data System (ADS)

    Mack, Chris A.

    2000-10-01

    Pattern infidelity of features on the wafer is critical to the functionality of a device. Among other error sources, the feature quality on the reticle is presumed to be a key contributing factor to wafer pattern fidelity. Of course, optimization of final pattern fidelity is dependent on the imaging and process of both the mask and wafer, as well as on their relationship to one another. This paper examines the key parameters used to predict the acceptable amount of corner rounding on the reticle, and to define proper metrics of reticle shape. Pattern shapes such as isolated corners, contact holes, and line ends will be examined. For line end shortening, the influence of both the imaging and the resist process is discussed.

  1. Improvement of linewidth control with antireflective coating in optical lithography

    NASA Astrophysics Data System (ADS)

    Lin, Yi-Ching; Purdes, Andrew J.; Saller, Steve A.; Hunter, William R.

    1984-02-01

    Antireflective (AR) coating less than 5000 Å has been investigated to eliminate the light reflection from layers under resist and to reduce the linewidth variation over topographical features. Theoretical calculations based on simulation results using the sample program indicate that more than 50% of the variations at the step crossover can be reduced by eliminating the standing wave effects for a step of height less than 0.8 μm. Several types of AR coating, including TiW, V, polysilicon films, and spun-on layer incorporated with an absorbing dye will be presented and compared. The exposure latitude can be widely extended by the AR coating. Both the standing wave effect and the linewidth change with respect to variation in exposure dose can also be reduced significantly. With the spun-on AR coating, which can be applied, patterned, developed, and stripped with the photoresist, the only steps added to the standard photoresist process are coating and baking the AR layer. Using a 10 : 1 reduction GCA Mann stepper to expose, linewidth variation of the order of 0.3 μm (total range) for 1.2-μm-thick aluminum over 0.5-μm steps, resulting from polysilicon gate patterning, has been demonstrated. There is no adverse undercutting due to the AR layer during the resist development and plasma aluminum etch. This simple and convenient technique can be effectively applied to wafers with topographical steps less than 0.8-μm height.

  2. High performance Si immersion gratings patterned with electron beam lithography

    NASA Astrophysics Data System (ADS)

    Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

    2014-07-01

    Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error

  3. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes.

  4. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications

    NASA Astrophysics Data System (ADS)

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I.; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.69), which enables efficient light focusing even inside other media such as water or adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping and fiber probes.

  5. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes. PMID:27472584

  6. Low-defect reflective mask blanks for extreme ultraviolet lithography

    SciTech Connect

    Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Walton, C; Ray-Chaudhuri, A

    1999-03-11

    Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA roadmap well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm² @ 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm² for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm² in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10-2/cm² level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling.

  7. Optical systems design with integrated rigorous vector diffraction

    NASA Astrophysics Data System (ADS)

    Kleemann, Bernd H.; Ruoff, Johannes; Seeßelberg, Markus; Kaltenbach, Johannes-Maria; Menke, Christoph; Dobschal, Hans-Jürgen

    2005-09-01

    Depending on the specific application of a diffractive optical element (DOE), its polarization impact on the optical system must be taken into account. This may be necessary in imaging as well as in illumination optics, e. g., in miniaturized integrated optics or in high-resolution photolithographic projection systems. Sometimes, polarization effects are unwanted and therefore an exact characterization of their influences is necessary; in other cases a high polarization effect is the goal. It is well known how to calculate the point spread function (PSF) of a single diffractive micro-Fresnel lens. To do the same for a complete optical system with source, lenses, coatings, mirrors, gratings and diffractive elements, a 3D electrical field propagation along the geometric optical path is introduced into the ray-trace based optical systems design software in order to incorporate the entire electromagnetic polarization effects from the source to the image plane. Our software also considers the complex diffraction amplitudes including polarization effects from DOEs provided by rigorous electromagnetic methods. Together with a plane wave decomposition and with the local linear grating assumption, we are able to rigorously investigate the impact of e. g. polarization effects on the PSF of the whole optical system. Using this approach we analyze a hybrid diffractive-refractive microscope objective for mask inspection systems at 193 nm. Additionally we investigate focal properties of a sample diffractive blue laser disc pickup system.

  8. Impacts of cost functions on inverse lithography patterning.

    PubMed

    Yu, Jue-Chin; Yu, Peichen

    2010-10-25

    For advanced CMOS processes, inverse lithography promises better patterning fidelity than conventional mask correction techniques due to a more complete exploration of the solution space. However, the success of inverse lithography relies highly on customized cost functions whose design and know-how have rarely been discussed. In this paper, we investigate the impacts of various objective functions and their superposition for inverse lithography patterning using a generic gradient descent approach. We investigate the most commonly used objective functions, which are the resist and aerial images, and also present a derivation for the aerial image contrast. We then discuss the resulting pattern fidelity and final mask characteristics for simple layouts with a single isolated contact and two nested contacts. We show that a cost function composed of a dominant resist-image component and a minor aerial-image or image-contrast component can achieve a good mask correction and contour targets when using inverse lithography patterning.

  9. Lithography imaging control by enhanced monitoring of light source performance

    NASA Astrophysics Data System (ADS)

    Alagna, Paolo; Zurita, Omar; Lalovic, Ivan; Seong, Nakgeuon; Rechsteiner, Gregory; Thornes, Joshua; D'havé, Koen; Van Look, Lieve; Bekaert, Joost

    2013-04-01

    Reducing lithography pattern variability has become a critical enabler of ArF immersion scaling and is required to ensure consistent lithography process yield for sub-30nm device technologies. As DUV multi-patterning requirements continue to shrink, it is imperative that all sources of lithography variability are controlled throughout the product life-cycle, from technology development to high volume manufacturing. Recent developments of new ArF light-source metrology and monitoring capabilities have been introduced in order to improve lithography patterning control.[1] These technologies enable performance monitoring of new light-source properties, relating to illumination stability, and enable new reporting and analysis of in-line performance.

  10. Direct-write scanning probe lithography: towards a desktop fab

    NASA Astrophysics Data System (ADS)

    Giam, Louise R.; Senesi, Andrew J.; Liao, Xing; Wong, Lu Shin; Chai, Jinan; Eichelsdoerfer, Daniel J.; Shim, Wooyoung; Rasin, Boris; He, Shu; Mirkin, Chad A.

    2011-06-01

    Massively parallel scanning-probe based methods have been used to address the challenges of nanometer to millimeter scale printing for a variety of materials and mark a step towards the realization of a "desktop fab." Such tools enable simple, flexible, high-throughput, and low-cost nano- and microscale patterning, which allow researchers to rapidly synthesize and study systems ranging from nanoparticle synthesis to biological processes. We have developed a novel scanning probe-based cantilever-free printing method termed polymer pen lithography (PPL), which uses an array of elastomeric tips to transfer materials (e.g. alkanethiols, proteins, polymers) in a direct-write manner onto a variety of surfaces. This technique takes the best attributes of dip-pen nanolithography (DPN) and eliminates many of the disadvantages of contact printing. Various related techniques such as beam pen lithography (BPL), scanning probe block copolymer lithography (SPBCL), and hard-tip, soft spring lithography (HSL) are also discussed.

  11. Ultra-Precision Optics

    NASA Technical Reports Server (NTRS)

    1999-01-01

    Under a Joint Sponsored Research Agreement with Goddard Space Flight Center, SEMATECH, Inc., the Silicon Valley Group, Inc. and Tinsley Laboratories, known as SVG-Tinsley, developed an Ultra-Precision Optics Manufacturing System for space and microlithographic applications. Continuing improvements in optics manufacture will be able to meet unique NASA requirements and the production needs of the lithography industry for many years to come.

  12. Design of chirped fly's eye uniformizer for ArF lithography illumination system

    NASA Astrophysics Data System (ADS)

    Xiao, Lei; Li, Yanqiu; Wei, Lidong

    2014-11-01

    Fly's eye uniformizer is the key part of ArF lithography illumination system, whose main function is to illuminate the reticle uniformly. Due to the periodic structure of regular fly's eye uniformizer and the high coherence of the ArF laser, the output intensity distribution is modulated with equidistant sharp intensity peaks (interference speckle pattern) which disturbed the uniformity on the reticle. In this paper, we design a chirped fly's eye uniformizer which consists of chirped fly's eye and a condenser for illumination system in ArF lithography system. The chirped fly's eye consists of individually shaped micro-lenses defined by a parametric description which can be derived completely from analytical functions. The micro-lenses with different thicknesses in the chirped fly's eye have a function of delaying the optical path which reducing the laser coherence and speckle pattern on the reticle. Detailed design process of the chirped fly's eye uniformizer for numerical aperture (NA) 0.75 lithography illumination system is presented. Light intensity distribution on reticle produced by regular and chirped fly's eye uniformizer are analyzed and compared by the method of wave optics, and the results show that chirped can restrain sharp intensity peaks efficiently. Furthermore, the chirped fly's eye uniformizer has been traced in LightTools software under conventional and annual illumination modes, and the non-uniformity of the non-scan and scan direction on the reticle reached 0.75% and 1.24% respectively. The simulation results show that the chirped fly's eye uniformizer can provide high illumination uniformity and reduce the speckle pattern efficiently without additional elements.

  13. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  14. Successful demonstration of a comprehensive lithography defect monitoring strategy

    NASA Astrophysics Data System (ADS)

    Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

    2003-07-01

    This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the

  15. Switching behavior of Nb/Exchange spring magnet/Nb Josephson Junctions fabricated by Nanosphere Lithography

    NASA Astrophysics Data System (ADS)

    Gu, Jiyeong; Arias, Gilbert; Hedges, Samuel

    Superconductor(S)/ferromagnet(F)/superconductor Josephson junction was fabricated by nanosphere lithography method. Samarium-Cobalt (SmCo)/Permalloy(Py) exchange spring magnet system was used to generate an inhomogeneous magnetic structure in Niobium(Nb)-based Josephson junctions. We introduced nanosphere lithography in our device fabrication in order to decrease the lateral size of junctions and improve the quality of our devices. A bigger size junctions (tens of microns) were fabricated by optical photolithography using a mask.* Materials were deposited through DC magnetron sputtering. Base structure of devices was patterned through photolithography. Modulations of the critical current and IV-curve characteristics of the junction were used to search for direct evidence of the odd-triplet component. In addition, to investigate the switching behavior of S/F/S junction for memory application junction critical current was measured as a function of magnetic field and the angle between an easy axis of ferromagnetic layer and the external magnetic field by rotating the sample under magnetic field. Magnetic switching behavior of the ferromagnetic layers in our junction was also characterized based on this observation. * Junction fabrication in this research by an optical photolithography using a mask was conducted at the Center for Nanophase Materials Sciences at Oak Ridge National Laboratory (CNMS User Project CNMS2014-257).

  16. 3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography.

    PubMed

    Ulmeanu, M; Grubb, M P; Jipa, F; Quignon, B; Ashfold, M N R

    2015-06-01

    We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates.

  17. Nanoimprint lithography using TiO2-SiO2 ultraviolet curable materials

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi

    2015-05-01

    Ultraviolet nanoimprint lithography has great potential for commercial device applications that are closest to production such as optical gratings, planar waveguides, photonic crystals, semiconductor, displays, solar cell panel, sensors, highbrightness LEDs, OLEDs, and optical data storage. I report and demonstrate the newly TiO2-SiO2 ultraviolet curable materials with 20-25 wt% ratio of high titanium for CF4/O2 etch selectivity using nanoimprint lithography process. The multiple structured three-dimensional micro- and nanolines patterns were observed to be successfully patterned over the large areas. The effect of titanium concentration on CF4/O2 etch selectivity with pattern transferring carbon layer imprinting time was investigated. CF4/O2 etching rate of the TiO2-SiO2 ultraviolet curable material was approximately 3.8 times lower than that of the referenced SiO2 sol-gel ultraviolet curable material. The TiO2-SiO2 ultraviolet curable material with high titanium concentration has been proved to be versatile in advanced nanofabrication.

  18. Nanoparticle fabrication by geometrically confined nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Denomme, Ryan C.; Iyer, Krishna; Kreder, Michael; Smith, Brendan; Nieva, Patricia M.

    2013-07-01

    Arrays of metal nanoparticles, typically gold or silver, exhibit localized surface plasmon resonance, a phenomenon that has many applications, such as chemical and biological sensing. However, fabrication of metal nanoparticle arrays with high uniformity and repeatability, at a reasonable cost, is difficult. Nanosphere lithography (NSL) has been used before to produce inexpensive nanoparticle arrays through the use of monolayers of self-assembled microspheres as a deposition mask. However, control over the size and location of the arrays, as well as uniformity over large areas is poor, thus limiting its use to research purposes. In this paper, a new NSL method, called here geometrically confined NSL (GCNSL), is presented. In GCNSL, microsphere assembly is confined to geometric patterns defined in photoresist, allowing high-precision and large-scale nanoparticle patterning while still remaining low cost. Using this new method, it is demonstrated that 400 nm polystyrene microspheres can be assembled inside of large arrays of photoresist patterns. Results show that optimal microsphere assembly is achieved with long and narrow rectangular photoresist patterns. The combination of microsphere monolayers and photoresist patterns is then used as a deposition mask to produce silver nanoparticles at precise locations on the substrate with high uniformity, repeatability, and quality.

  19. Image-projection ion-beam lithography

    SciTech Connect

    Miller, P.A.

    1989-01-01

    Image-projection ion-beam lithography promises high-throughput patterning with wide process latitude, excellent resolution, and minimal damage to underlying circuit layers. The process involves extracting helium ions from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto the wafer. A key feature is the use of image demagnification which simplifies reticle fabrication and inspection, and leads to low power loading on the reticle and long reticle life. In this paper we report computational studies aimed at improving field size, linearity, and telecentricity over that demonstrated experimentally in the pioneering work by Ion Microfabrication Systems, GmbH (Vienna) during the past decade. We study a mechanically simple arrangement of equal-radii coaxial tubular lenses. We employ ion column optimization by simulated annealing and uncover a new optimization strategy which may be applicable in other optimization work. The resulting column design is much improved over our initial attempts based on an iterative optimization procedure. However, we still are unable to eliminate image distortion, and we would need either to rely on reticle predistortion or on use of a more complex electrode system for a production application. 15 refs., 5 figs.

  20. X-ray lithography using holographic images

    DOEpatents

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  1. Characterization of 'metal resist' for EUV lithography

    NASA Astrophysics Data System (ADS)

    Toriumi, Minoru; Sato, Yuta; Kumai, Reiji; Yamashita, Yoshiyuki; Tsukiyama, Koichi; Itani, Toshiro

    2016-03-01

    We characterized EIDEC metal resist for EUV lithography by various measurement methods. The low-voltage aberration-corrected scanning transmission electron microscopy combined with electron energy-loss spectroscopy showed the morphology of metal resists in nanometer regions and enabled studying the distribution of resist component in the resist film. The zirconium oxide metal resist kept the core-shell structure in the resist films and the titanium oxide metal resist showed the aggregation in the film. X-ray diffractometry and ab initio molecular dynamics simulation showed the amorphous structure with short-range order of the zirconium oxide metal resist. X-ray Photoelectron spectroscopy of the zirconium oxide-methacrylic acid metal resist showed the decomposition of the shell molecules and the increase of electron density at zirconium atoms after the EUV exposure. Infrared (IR) spectra indicated that the shell molecules made the various bindings to the metal core and the specific vibrational mode of shell molecules showed the divergent responsivity to the irradiation wavenumber of the IR Free electron laser.

  2. Smartphone sensors for stone lithography authentication.

    PubMed

    Spagnolo, Giuseppe Schirripa; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to "authenticate" non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the "not original artwork" is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  3. Resist profile simulation with fast lithography model

    NASA Astrophysics Data System (ADS)

    He, Yan-Ying; Chou, Chih-Shiang; Tang, Yu-Po; Huang, Wen-Chun; Liu, Ru-Gun; Gau, Tsai-Sheng

    2014-03-01

    A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for OPC modeling. As the technology moves forward, this traditional approach has become insufficient in regard to lithography weak point detection, etching bias prediction, etc. The drawback of this approach is from metrology and simulation. First, top-down SEM is only good for acquiring planar CD information. Some 3D metrology such as cross-section SEM or AFM is necessary to obtain the true resist profile. Second, the TCC modeling approach is only suitable for planar image simulation. In order to model the resist profile, full 3D image simulation is needed. Even though there are many rigorous simulators capable of catching the resist profile very well, none of them is feasible for full-chip application due to the tremendous consumption of computational resource. The authors have proposed a quasi-3D image simulation method in the previous study [1], which is suitable for full-chip simulation with the consideration of sidewall angles, to improve the model accuracy of planar models. In this paper, the quasi-3D image simulation is extended to directly model the resist profile with AFM and/or cross-section SEM data. Resist weak points detected by the model generated with this 3D approach are verified on the wafer.

  4. Metal hierarchical patterning by direct nanoimprint lithography

    PubMed Central

    Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

    2013-01-01

    Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

  5. Smartphone Sensors for Stone Lithography Authentication

    PubMed Central

    Schirripa Spagnolo, Giuseppe; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to “authenticate” non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the “not original artwork” is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  6. Programmable lithography engine (ProLE) grid-type supercomputer and its applications

    NASA Astrophysics Data System (ADS)

    Petersen, John S.; Maslow, Mark J.; Gerold, David J.; Greenway, Robert T.

    2003-06-01

    There are many variables that can affect lithographic dependent device yield. Because of this, it is not enough to make optical proximity corrections (OPC) based on the mask type, wavelength, lens, illumination-type and coherence. Resist chemistry and physics along with substrate, exposure, and all post-exposure processing must be considered too. Only a holistic approach to finding imaging solutions will accelerate yield and maximize performance. Since experiments are too costly in both time and money, accomplishing this takes massive amounts of accurate simulation capability. Our solution is to create a workbench that has a set of advanced user applications that utilize best-in-class simulator engines for solving litho-related DFM problems using distributive computing. Our product, ProLE (Programmable Lithography Engine), is an integrated system that combines Petersen Advanced Lithography Inc."s (PAL"s) proprietary applications and cluster management software wrapped around commercial software engines, along with optional commercial hardware and software. It uses the most rigorous lithography simulation engines to solve deep sub-wavelength imaging problems accurately and at speeds that are several orders of magnitude faster than current methods. Specifically, ProLE uses full vector thin-mask aerial image models or when needed, full across source 3D electromagnetic field simulation to make accurate aerial image predictions along with calibrated resist models;. The ProLE workstation from Petersen Advanced Lithography, Inc., is the first commercial product that makes it possible to do these intensive calculations at a fraction of a time previously available thus significantly reducing time to market for advance technology devices. In this work, ProLE is introduced, through model comparison to show why vector imaging and rigorous resist models work better than other less rigorous models, then some applications of that use our distributive computing solution are shown

  7. Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

    2013-03-01

    In this study we report a new method for direct-write maskless lithography using oxidized silicon layer induced by high repetition (MHz) ultrafast (femtosecond) laser pulses under ambient condition. The induced thin layer of predetermined pattern can act as an etch stop during etching process in alkaline etchants such as KOH. The proposed method can be leading to promising solutions for direct-write maskless lithography technique since the proposed method offers a higher degree of flexibility and reduced time and cost of fabrication which makes it particularly appropriate for rapid prototyping and custom scale manufacturing. A Scanning Electron Microscope (SEM), Micro-Raman, Energy Dispersive X-ray (EDX), optical microscope and X-ray diffraction spectroscopy (XRD) were used to evaluate the quality of oxidized layer induced by laser pulses.

  8. Multilevel, room-temperature nanoimprint lithography for conjugated polymer-based photonics.

    PubMed

    Mele, Elisa; Di Benedetto, Francesca; Persano, Luana; Cingolani, Roberto; Pisignano, Dario

    2005-10-01

    We demonstrate the multilevel patterning of organic light-emitting polymers by room-temperature nanoimprint lithography (RT-NIL), which is impossible to obtain by conventional hot embossing. In particular, we realize one- and two-dimensional photonic crystals with 500 nm periodic features and investigate the changes in the optical properties (luminescence and quantum yield) of the organic active layer. An increase of the quantum yield by 2.4% for the patterned film with respect to the untextured one and the enhancement of the output light emitted at a particular angle (Theta = 69 degrees) are observed for gratings whose Bragg periodicity matched the emission wavelength of the polymer. The employment of RT-NIL to pattern polymer semiconductors without degradation of their optical properties represents a strategic route for the realization of novel nanopatterned optoelectronic devices.

  9. Optics and multilayer coatings for EUVL systems

    SciTech Connect

    Soufli, R; Bajt, S; Hudyma, R M; Taylor, J S

    2008-03-21

    EUV lithography (EUVL) employs illumination wavelengths around 13.5 nm, and in many aspects it is considered an extension of optical lithography, which is used for the high-volume manufacturing (HVM) of today's microprocessors. The EUV wavelength of illumination dictates the use of reflective optical elements (mirrors) as opposed to the refractive lenses used in conventional lithographic systems. Thus, EUVL tools are based on all-reflective concepts: they use multilayer (ML) coated optics for their illumination and projection systems, and they have a ML-coated reflective mask.

  10. Modulating two-dimensional non-close-packed colloidal crystal arrays by deformable soft lithography.

    PubMed

    Li, Xiao; Wang, Tieqiang; Zhang, Junhu; Yan, Xin; Zhang, Xuemin; Zhu, Difu; Li, Wei; Zhang, Xun; Yang, Bai

    2010-02-16

    We report a simple method to fabricate two-dimensional (2D) periodic non-close-packed (ncp) arrays of colloidal microspheres with controllable lattice spacing, lattice structure, and pattern arrangement. This method combines soft lithography technique with controlled deformation of polydimethylsiloxane (PDMS) elastomer to convert 2D hexagonal close-packed (hcp) silica microsphere arrays into ncp ones. Self-assembled 2D hcp microsphere arrays were transferred onto the surface of PDMS stamps using the lift-up technique, and then their lattice spacing and lattice structure could be adjusted by solvent swelling or mechanical stretching of the PDMS stamps. Followed by a modified microcontact printing (microcp) technique, the as-prepared 2D ncp microsphere arrays were transferred onto a flat substrate coated with a thin film of poly(vinyl alcohol) (PVA). After removing the PVA film by calcination, the ncp arrays that fell on the substrate without being disturbed could be lifted up, deformed, and transferred again by another PDMS stamp; therefore, the lattice feature could be changed step by step. Combining isotropic solvent swelling and anisotropic mechanical stretching, it is possible to change hcp colloidal arrays into full dimensional ncp ones in all five 2D Bravais lattices. This deformable soft lithography-based lift-up process can also generate patterned ncp arrays of colloidal crystals, including one-dimensional (1D) microsphere arrays with designed structures. This method affords opportunities and spaces for fabrication of novel and complex structures of 1D and 2D ncp colloidal crystal arrays, and these as-prepared structures can be used as molds for colloidal lithography or prototype models for optical materials. PMID:19715332

  11. Modulating two-dimensional non-close-packed colloidal crystal arrays by deformable soft lithography.

    PubMed

    Li, Xiao; Wang, Tieqiang; Zhang, Junhu; Yan, Xin; Zhang, Xuemin; Zhu, Difu; Li, Wei; Zhang, Xun; Yang, Bai

    2010-02-16

    We report a simple method to fabricate two-dimensional (2D) periodic non-close-packed (ncp) arrays of colloidal microspheres with controllable lattice spacing, lattice structure, and pattern arrangement. This method combines soft lithography technique with controlled deformation of polydimethylsiloxane (PDMS) elastomer to convert 2D hexagonal close-packed (hcp) silica microsphere arrays into ncp ones. Self-assembled 2D hcp microsphere arrays were transferred onto the surface of PDMS stamps using the lift-up technique, and then their lattice spacing and lattice structure could be adjusted by solvent swelling or mechanical stretching of the PDMS stamps. Followed by a modified microcontact printing (microcp) technique, the as-prepared 2D ncp microsphere arrays were transferred onto a flat substrate coated with a thin film of poly(vinyl alcohol) (PVA). After removing the PVA film by calcination, the ncp arrays that fell on the substrate without being disturbed could be lifted up, deformed, and transferred again by another PDMS stamp; therefore, the lattice feature could be changed step by step. Combining isotropic solvent swelling and anisotropic mechanical stretching, it is possible to change hcp colloidal arrays into full dimensional ncp ones in all five 2D Bravais lattices. This deformable soft lithography-based lift-up process can also generate patterned ncp arrays of colloidal crystals, including one-dimensional (1D) microsphere arrays with designed structures. This method affords opportunities and spaces for fabrication of novel and complex structures of 1D and 2D ncp colloidal crystal arrays, and these as-prepared structures can be used as molds for colloidal lithography or prototype models for optical materials.

  12. Intelligent control system based on ARM for lithography tool

    NASA Astrophysics Data System (ADS)

    Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

    2014-08-01

    The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

  13. Virtual mask digital electron beam lithography

    DOEpatents

    Baylor, L.R.; Thomas, C.E.; Voelkl, E.; Moore, J.A.; Simpson, M.L.; Paulus, M.J.

    1999-04-06

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made. 5 figs.

  14. Virtual mask digital electron beam lithography

    DOEpatents

    Baylor, Larry R.; Thomas, Clarence E.; Voelkl, Edgar; Moore, James A.; Simpson, Michael L.; Paulus, Michael J.

    1999-01-01

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made.

  15. Extreme Ultraviolet Lithography - Reflective Mask Technology

    SciTech Connect

    Walton, C.C.; Kearney, P.A.; Mirkarimi, P.B.; Bowers, J.M.; Cerjan, C.; Warrick, A.L.; Wilhelmsen, K.; Fought, E.; Moore, C.; Larson, C.; Baker, S.; Burkhart, S.C.; Hector, S.D.

    2000-05-09

    EUVL mask blanks consist of a distributed Bragg reflector made of 6.7nm-pitch bi-layers of MO and Si deposited upon a precision Si or glass substrate. The layer deposition process has been optimized for low defects, by application of a vendor-supplied but highly modified ion-beam sputter deposition system. This system is fully automated using SMIF technology to obtain the lowest possible environmental- and handling-added defect levels. Originally designed to coat 150mm substrates, it was upgraded in July, 1999 to 200 mm and has coated runs of over 50 substrates at a time with median added defects >100nm below 0.05/cm{sup 2}. These improvements have resulted from a number of ion-beam sputter deposition system modifications, upgrades, and operational changes, which will be discussed. Success in defect reduction is highly dependent upon defect detection, characterization, and cross-platform positional registration. We have made significant progress in adapting and extending commercial tools to this purpose, and have identified the surface scanner detection limits for different defect classes, and the signatures of false counts and non-printable scattering anomalies on the mask blank. We will present key results and how they have helped reduce added defects. The physics of defect reduction and mitigation is being investigated by a program on multilayer growth over deliberately placed perturbations (defects) of varying size. This program includes modeling of multilayer growth and modeling of defect printability. We developed a technique for depositing uniformly sized gold spheres on EUVL substrates, and have studied the suppression of the perturbations during multilayer growth under varying conditions. This work is key to determining the lower limit of critical defect size for EUV Lithography. We present key aspects of this work. We will summarize progress in all aspects of EUVL mask blank development, and present detailed results on defect reduction and mask blank

  16. Discharge plasmas as EUV Sources for Future Micro Lithography

    NASA Astrophysics Data System (ADS)

    Kruecken, Thomas

    2007-08-01

    Future extreme ultraviolet (EUV) lithography will require very high radiation intensities in a narrow wavelength range around 13.5 nm, which is most efficiently emitted as line radiation by highly ionized heavy particles. Currently the most intense EUV sources are based on xenon or tin gas discharges. After having investigated the limits of a hollow cathode triggered xenon pinch discharge Philips Extreme UV favors a laser triggered tin vacuum spark discharge. Plasma and radiation properties of these highly transient discharges will be compared. Besides simple MHD-models the ADAS software package has been used to generate important atomic and spectral data of the relevant ion stages. To compute excitation and radiation properties, collisional radiative equilibria of individual ion stages are computed. For many lines opacity effects cannot be neglected. In the xenon discharges the optical depths allow for a treatment based on escape factors. Due to the rapid change of plasma parameters the abundancies of the different ionization stages must be computed dynamically. This requires effective ionization and recombination rates, which can also be supplied by ADAS. Due to very steep gradients (up to a couple orders of magnitude per mm) the plasma of tin vacuum spark discharges is very complicated. Therefore we shall describe here only some technological aspects of our tin EUV lamp: The electrode system consists of two rotating which are pulled through baths of molten tin such that a tin film remains on their surfaces. With a laser pulse some tin is ablated from one of the wheels and travels rapidly through vacuum towards the other rotating wheel. When the tin plasma reaches the other electrodes it ignites and the high current phase starts, i.e. the capacitor bank is unloaded, the plasma is pinched and EUV is radiated. Besides the good spectral properties of tin this concept has some other advantages: Erosion of electrodes is no severe problem as the tin film is

  17. Deconstructing contact hole CD printing variability in EUV lithography

    NASA Astrophysics Data System (ADS)

    Civay, D.; Wallow, T.; Doganaksoy, N.; Verduijn, E.; Schmid, G.; Mangat, P.

    2014-04-01

    Lithographic CD printing variability can be easily captured with a CDU measurement, however delineating the most significant sources causing the variability is challenging. In EUV lithography, the resist, reticle, metrology methodology, and stochastics are examples of factors that influence printing variability. Determining the most significant sources of variability in contact hole and via patterning is particularly interesting because the variability can be measured as a function of two tethered dimensions. Contact hole (CH) variability has a direct impact on device performance while via variability affects metal area scaling and design. By studying sources of variability opportunities for improving device performance and scaling can be identified. In this paper, we will examine sources of contact patterning variability in EUV lithography comprehensively using various EUV exposure tools as well as simulation methods. We will present a benchmark of current state of the art materials and patterning methods with the goal of assessing contact hole printability at the limit of 0.33 NA EUV lithography.

  18. Recent progress in nanoparticle photoresists development for EUV lithography

    NASA Astrophysics Data System (ADS)

    Kasahara, Kazuki; Kosma, Vasiliki; Odent, Jeremy; Xu, Hong; Yu, Mufei; Giannelis, Emmanuel P.; Ober, Christopher K.

    2016-03-01

    Extreme ultraviolet (EUV) lithography is a promising candidate for next generation lithography. For high volume manufacturing of semiconductor devices, significant improvement of resolution and sensitivity is required for successful implementation of EUV resists. Performance requirements for such resists demand the development of entirely new resist platforms. Cornell University has intensely studied metal oxide nanoparticle photoresists with high sensitivity for EUV lithography applications. Zirconium oxide nanoparticles with PAG enabling sub 30nm line negative tone patterns at an EUV dose below 5 mJ/cm2 show one of the best EUV sensitivity results ever reported. In this paper, recent progress in metal oxide nanoparticle photoresist research will be discussed. Several studies regarding composition investigation and new metal element study are reported.

  19. Thickness optimization for lithography process on silicon substrate

    NASA Astrophysics Data System (ADS)

    Su, Xiaojing; Su, Yajuan; Liu, Yansong; Chen, Fong; Liu, Zhimin; Zhang, Wei; Li, Bifeng; Gao, Tao; Wei, Yayi

    2015-03-01

    With the development of the lithography, the demand for critical dimension (CD) and CD uniformity (CDU) has reached a new level, which is harder and harder to achieve. There exists reflection at the interface between photo-resist and substrate during lithography exposure. This reflection has negative impact on CD and CDU control. It is possible to optimize the litho stack and film stack thickness on different lithography conditions. With the optimized stack, the total reflectivity for all incident angles at the interface can be controlled less than 0.5%, ideally 0.1%, which enhances process window (PW) most of the time. The theoretical results are verified by the experiment results from foundry, which helps the foundry achieve the mass production finally.

  20. X-ray lithography: a system integration effort

    NASA Astrophysics Data System (ADS)

    Selzer, Robert A.; Heaton, John; Vladimirsky, Yuli; Simon, Klaus

    1999-06-01

    Despite growing expectations of significant progress in projection lithography using shorter wavelengths, x-ray lithography is still the most developed and production ready technology compared with the other NGL approaches. For the timely introduction of this technology into the manufacturing environment the development of fully integrated x-ray lithography systems becomes very important. Reflecting manufacturing and R and D demands, the x-ray technology integration has been pursued for goth synchrotron radiation and x-ray point source based approaches. While the synchrotron-based approach provides the high volume platform, the point source will provide the platform for low volume production and R and D efforts. SAL recognizes the needs for both, a synchrotron based stepper as well as a point source stepper and is focused on meeting those needs. This paper will present the status of integration efforts at SAL utilizing a point source system.

  1. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  2. Immersion defectivity study with volume production immersion lithography tool

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Kato, Hiroshi; Fujiwara, Tomoharu; Shiraishi, K.; Iriuchijima, Yasuhiro; Owa, Soichi; Malik, Irfan; Woodman, Steve; Terala, Prasad; Pelissier, Christine; Zhang, Haiping

    2007-03-01

    ArF immersion lithography has become accepted as the critical layer patterning solution for lithography going forward. Volume production of 55 nm devices using immersion lithography has begun. One of the key issues for the success of volume production immersion lithography is the control of immersion defectivity. Because the defectivity is influenced by the exposure tool, track, materials, and the wafer environment, a broad range of analysis and optimization is needed to minimize defect levels. Defect tests were performed using a dedicated immersion cluster consisting of a volume production immersion exposure tool, Nikon NSR-S609B, having NA of 1.07, and a resist coater-developer, TEL LITHIUS i+. Miniaturization of feature size by immersion lithography requires higher sensitivity defect inspection. In this paper, first we demonstrate the high sensitivity defect measurement using a next generation wafer inspection system, KLA-Tencor 2800 and Surfscan SP2, on both patterned and non-patterned wafers. Long-term defect stability is very important from the viewpoint of device mass production. Secondly, we present long-term defectivity data using a topcoat-less process. For tool and process qualification, a simple monitor method is required. Simple, non-pattern immersion scanned wafer measurement has been proposed elsewhere, but the correlation between such a non-pattern defect and pattern defect must be confirmed. In this paper, using a topcoat process, the correlation between topcoat defects and pattern defects is analyzed using the defect source analysis (DSA) method. In case of accidental tool contamination, a cleaning process should be established. Liquid cleaning is suitable because it can be easily introduced through the immersion nozzle. An in-situ tool cleaning method is introduced. A broad range of optimization of tools, materials, and processes provide convincing evidence that immersion lithography is ready for volume production chip manufacturing.

  3. ILT for double exposure lithography with conventional and novel materials

    NASA Astrophysics Data System (ADS)

    Poonawala, Amyn; Borodovsky, Yan; Milanfar, Peyman

    2007-03-01

    Multiple paths exists to provide lithography solutions pursuant to Moore's Law for next 3-5 generations of technology, yet each of those paths inevitably leads to solutions eventually requiring patterning at k I < 0.30 and below. In this article, we explore double exposure single development lithography for k I >= 0.25 (using conventional resist) and k1 < 0.25 (using new out-of-sight out-of-mind materials). For the case of k I >= 0.25, we propose a novel double exposure inverse lithography technique (ILT) to split the pattern. Our algorithm is based on our earlier proposed single exposure ILT framework, and works by decomposing the aerial image (instead of the target pattern) into two parts. It also resolves the phase conflicts automatically as part of the decomposition, and the combined aerial image obtained using the estimated masks has a superior contrast. For the case of k I < 0.25, we focus on analyzing the use of various dual patterning techniques enabled by the use of hypothetic materials with properties that allow for the violation of the linear superposition of intensities from the two exposures. We investigate the possible use of two materials: contrast enhancement layer (CEL) and two-photon absorption resists. We propose a mathematical model for CEL, define its characteristic properties, and derive fundamental bounds on the improvement in image log-slope. Simulation results demonstrate that double exposure single development lithography using CEL enables printing 80nm gratings using dry lithography. We also combine ILT, CEL, and DEL to synthesize 2-D patterns with k I = 0.185. Finally, we discuss the viability of two-photon absorption resists for double exposure lithography.

  4. Modeling the rovibrationally excited C2H4OH radicals from the photodissociation of 2-bromoethanol at 193 nm.

    PubMed

    Ratliff, B J; Womack, C C; Tang, X N; Landau, W M; Butler, L J; Szpunar, D E

    2010-04-15

    This study photolytically generates, from 2-bromoethanol photodissociation, the 2-hydroxyethyl radical intermediate of the OH + ethene reaction and measures the velocity distribution of the stable radicals. We introduce an impulsive model to characterize the partitioning of internal energy in the C(2)H(4)OH fragment. It accounts for zero-point and thermal vibrational motion to determine the vibrational energy distribution of the nascent C(2)H(4)OH radicals and the distribution of total angular momentum, J, as a function of the total recoil kinetic energy imparted in the photodissociation. We render this system useful for the study of the subsequent dissociation of the 2-hydroxyethyl radical to the possible asymptotic channels of the OH + ethene reaction. The competition between these channels depends on the internal energy and the J distribution of the radicals. First, we use velocity map imaging to separately resolve the C(2)H(4)OH + Br((2)P(3/2)) and C(2)H(4)OH + Br((2)P(1/2)) photodissociation channels, allowing us to account for the 10.54 kcal/mol partitioned to the Br((2)P(1/2)) cofragment. We determine an improved resonance enhanced multiphoton ionization (REMPI) line strength for the Br transitions at 233.681 nm (5p (4)P(1/2) <-- 4p (2)P(3/2)) and 234.021 nm (5p (2)S(1/2) <-- 4p (2)P(1/2)) and obtain a spin-orbit branching ratio for Br((2)P(1/2)):Br((2)P(3/2)) of 0.26 +/- 0.03:1. Energy and momentum conservation give the distribution of total internal energy, rotational and vibrational, in the C(2)H(4)OH radicals. Then, using 10.5 eV photoionization, we measure the velocity distribution of the radicals that are stable to subsequent dissociation. The onset of dissociation occurs at internal energies much higher than those predicted by theoretical methods and reflects the significant amount of rotational energy imparted to the C(2)H(4)OH photofragment. Instead of estimating the mean rotational energy with an impulsive model from the equilibrium geometry of 2-bromoethanol, our model explicitly includes weighting over geometries across the quantum wave function with zero, one, and two quanta in the harmonic mode that most strongly alters the exit impact parameter. The model gives a nearly perfect prediction of the measured velocity distribution of stable radicals near the dissociation onset using a G4 prediction of the C-Br bond energy and the dissociation barrier for the OH + ethene channel calculated by Senosiain et al. (J. Phys. Chem. A 2006, 110, 6960). The model also indicates that the excited state dissociation proceeds primarily from a conformer of 2-bromoethanol that is trans across the C-C bond. We discuss the possible extensions of our model and the effect of the radical intermediate's J-distribution on the branching between the OH + ethene product channels. PMID:20302318

  5. Ablation de ZnO par laser UV (193 nm) : nano-agrégats en phase gazeuse

    NASA Astrophysics Data System (ADS)

    Ozerov, I.; Bulgakov, A.; Nelson, D.; Castell, R.; Sentis, M.; Marine, W.

    2003-06-01

    La condensation de nano-agrégats d'oxyde de zinc en phase gazeuse est mise en évidence lors de l'ablation de ZnO massif par laser ArF pulsé. Nous comparons l'évolution spatio-temporelle de la forme du panache d'ablation (plume) de ZnO sous vide et sous atmosphère de gaz de couverture (oxygène et/ou hélium) à partir des images CCD et des résultats issus d'analyses spectroscopiques. L'expansion du plasma et la croissance des nano-clusters sont influencées par l'effet du confinement de la plume dû aux collisions entre les particules ablatées et les molécules de gaz ambiant ainsi que par les réactions chimiques dans le cas de l'oxygène. Le spectre de rayonnement du plasma est constitué principalement par l'émission d'atomes excités de Zn neutre. Nous avons observé la photoluminescence des nano-agrégats en suspension dans le gaz ainsi que leur décomposition par laser ArF.

  6. Development and numerical solution of a mechanistic model for corneal tissue ablation with the 193 nm argon fluoride excimer laser

    NASA Astrophysics Data System (ADS)

    Fisher, Brian T.; Hahn, David W.

    2007-02-01

    We detail the development and implementation of a global ablation model that incorporates a dynamically changing tissue absorption coefficient. Detailed spectroscopic measurements rule out plasma-shielding effects during the laser-tissue interaction and thereby support a photochemical mechanism. The model predicts ablation rate behavior that agrees well with a variety of experimental ablation rate data and that substantially deviates from a static Beer-Lambert model. The dynamic model predicts an enhancement in the tissue absorption coefficient of about 25%-50% as compared with the initial, static value. In addition, the model predicts an increase in the tissue ablation rate as corneal hydration increases, which may provide additional insight into variations in refractive surgery outcome.

  7. Direct-writing lithography using laser diode beam focused with single elliptical microlens

    NASA Astrophysics Data System (ADS)

    Hasan, Md. Nazmul; Haque, Muttahid-Ull; Trisno, Jonathan; Lee, Yung-Chun

    2015-10-01

    A lithography method is proposed for arbitrary patterning using an elliptically diverging laser diode beam focused with a single planoconvex elliptical microlens. Simulations are performed to model the propagation properties of the laser beam and to design the elliptical microlens, which has two different profiles in the x- and y-axis directions. The microlens is fabricated using an excimer laser dragging method and is then attached to the laser diode using double-sided optically cleared adhesive (OCA) tape. Notably, the use of OCA tape removes the need for a complicated alignment procedure and thus significantly reduces the assembly cost. The minimum focused spot of the laser diode beam is investigated by performing single-shot exposure tests on a photoresist (PR) layer. Finally, the practical feasibility of this lithography technique to generate an arbitrary pattern is demonstrated by dotted and continuous features through thin chromium layer deposition on PR and a metal lift-off process. The results show that the minimum feature size for the dotted patterns is around 6.23 μm, while the minimum linewidths for continuous patterns is 6.44 μm. In other words, the proposed focusing technique has significant potential for writing any arbitrary high-resolution pattern for applications like printed circuit board fabrication.

  8. Self-assembly and nanosphere lithography for large-area plasmonic patterns on graphene.

    PubMed

    Lotito, Valeria; Zambelli, Tomaso

    2015-06-01

    Plasmonic structures on graphene can tailor its optical properties, which is essential for sensing and optoelectronic applications, e.g. for the enhancement of photoresponsivity of graphene photodetectors. Control over their structural and, hence, spectral properties can be attained by using electron beam lithography, which is not a viable solution for the definition of patterns over large areas. For the fabrication of large-area plasmonic nanostructures, we propose to use self-assembled monolayers of nanospheres as a mask for metal evaporation and etching processes. An optimized approach based on self-assembly at air/water interface with a properly designed apparatus allows the attainment of monolayers of hexagonally closely packed patterns with high long-range order and large area coverage; special strategies are devised in order to protect graphene against damage resulting from surface treatment and further processing steps such as reactive ion etching, which could potentially impair graphene properties. Therefore we demonstrate that nanosphere lithography is a cost-effective solution to create plasmonic patterns on graphene.

  9. Moiré nanosphere lithography: use colloidal moiré patterns as masks

    NASA Astrophysics Data System (ADS)

    Chen, Kai; Rajeeva, Bharath B.; Wu, Zilong; Rukavina, Michael; Dao, Thang Duy; Ishii, Satoshi; Aono, Masakazu; Nagao, Tadaaki; Zheng, Yuebing

    2015-08-01

    Nanosphere lithography (NSL) uses self-assembled layers of monodisperse micro-/nano-spheres as masks to fabricate plasmonic metal nanoparticles. Different variants of NSL have been proposed with the combination with dry etching and/or angled-deposition. These techniques have employed to fabricate a wide variety of plasmonic nanoparticles or nanostructures. Here we report another promising extension - moiré nanosphere lithography (MNSL), which incorporates in-plane twisting between neighboring monolayers, to extend the patterning capability of conventional NSL. In conventional NSL, the masks, either a monolayer or bilayer, are formed by spontaneous self-assembly. Therefore, the resulted colloidal crystal configurations are limited. In this work we used sequential stacking of polystyrene nanosphere monolayers to form a bilayer crystal at the air/water interfaces. During this layer-by-layer stacking process, a crystal domain in the top layer gains the freedom to positon itself in a relative angle to that in the bottom layer allowing for the formation of moiré patterns. Subsequent O2 plasma etching results in a variety of complex nanostructures that have not been reported before. Using etched moiré patterns as masks, we further fabricated the corresponding gold nanostructures and characterized their scattering optical properties. We believe this facile technique provides a new strategy to fabricate novel and complex plasmonic nanostructures or metasurfaces.

  10. Calibration of exposure dose for nanoscale plasmonic lithography with microsized far-field spot patterns

    NASA Astrophysics Data System (ADS)

    Han, Dandan; Park, Changhoon; Jung, Howon; Hahn, Jae W.

    2016-09-01

    To improve the reliability of a plasmonic lithography system for nanoscale device fabrication, a rapid calibration process is essentially required. The calibration needs a time-consuming process using an atomic force microscope (AFM) to measure a number of nano-sized spot pattern widths recorded for the variation of the exposure dose. On the basis of the underlying mechanisms of a propagating field through a bowtie aperture, we conducted a theoretical study to derive a fitting equation to predict the widths of spot patterns in a near-field region compared with those in the far-field region. We obtained a calibration curve of the exposure dose to fit the width of spot pattern in the far-field region that is measureable using an optical microscope (OM). The validity of the rapid calibration process using an OM was verified by comparison between the calibration curves determined using AFM and OM, and the uncertainty between them was found to be 3.4%. The drift of the calibration curve was further explored to calculate the system stability of the plasmonic lithography technique, which was estimated to be  >93%. Furthermore, we also demonstrated that the calibration curve is effective in the prediction of the exposure dose for nanoscale line patterning.

  11. Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

    NASA Astrophysics Data System (ADS)

    Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

    2016-03-01

    With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

  12. Objective for EUV microscopy, EUV lithography, and x-ray imaging

    DOEpatents

    Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

    2016-05-03

    Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

  13. Energetic-assisted scanning thermal lithography for patterning silver nanoparticles in polymer films.

    PubMed

    Huang, Chun-Min; Yeh, Chung-Hsien; Chen, Lung; Huang, De-An; Kuo, Changshu

    2013-01-01

    Energetic-assisted scanning thermal lithography (SThL) was demonstrated with the addition of benzoyl peroxide (BPO) for patterning silver nanoparticles. SThL samples were prepared by spin-coating poly(methyl methacrylate) (PMMA) thin films preloaded with BPO and silver nitrate precursors. Localized thermal analysis via probe heating demonstrated that the BPO decomposition in the polymer film took place at the temperature of 80 °C. Above this temperature, the thermal probe initiated the decomposition of the peroxide, which resulted in the in situ discharge of exothermal energy to compensate the joule shortage and the rapid cooling in the SThL thin film samples. The additional joule energy thermally enhanced the synthesis of silver nanoparticles, which were patterned and embedded in the PMMA thin film. Surface plasmon resonance scattering of these silver nanoparticles was observed by dark-field optical microscopy, whereas the nanoparticle distribution was examined by transmission electron microscopy. Variations in the scanning probe temperatures and peroxide concentrations were carefully investigated to optimize the thermal lithography efficiency upon the addition of energetics.

  14. UV curing imprint lithography for micro-structure in MEMS manufacturing

    NASA Astrophysics Data System (ADS)

    Ding, Yucheng; Liu, Hongzhong; Lu, Bingheng; Qiu, Zhihui

    2006-04-01

    Imprint lithography has been gaining popularity as a new method to fabricate microelectro mechanical systems. The main advantages of the IL are its extremely low set-up cost, high replicating accuracy and extended fabricating critical dimension. Compare to traditional optical lithography, IL has the advantages of being able to fabricate complex pattern structure with high-aspect ratio. However, the thermal and loading errors can reduce pattern transferring fidelity. In this paper, UV curing method is used in IL process which can avoid the heat distortion of tools. Additionally, a six-step loading process for template pressing into resist film is developed. The performance of this process include: the loading locus is continuous with very high accuracy (10nm), the press releaseing control (accuracy up to 1 psi) can reduce and avoid the distortion of template structure and stage supports. This process can achieve a residual layer with thickness of 20nm and avoid the elastic stamp distorted (under 20nm) at the same time. The press force can reach up to 300 psi for 6 cm2 pattern size but the friction force during demould process can be reduced to 30 psi. Experimental results reveal that it is a novel and robust process with high fidelity in micro/nano structures manufacturing.

  15. Directed self-assembly graphoepitaxy template generation with immersion lithography

    NASA Astrophysics Data System (ADS)

    Ma, Yuansheng; Lei, Junjiang; Andres Torres, J.; Hong, Le; Word, James; Fenger, Germain; Tritchkov, Alexander; Lippincott, George; Gupta, Rachit; Lafferty, Neal; He, Yuan; Bekaert, Joost; Vanderberghe, Geert

    2015-07-01

    We present an optimization methodology for the template designs of subresolution contacts using directed self-assembly (DSA) with graphoepitaxy and immersion lithography. We demonstrate the flow using a 60-nm-pitch contact design in doublet with Monte Carlo simulations for DSA. We introduce the notion of template error enhancement factor (TEEF) to gauge the sensitivity of DSA printing infidelity to template printing infidelity and evaluate optimized template designs with TEEF metrics. Our data show that source mask optimization and inverse lithography technology are critical to achieve sub-80 nm non-L0 pitches for DSA patterns using 193i.

  16. Nanoimprint lithography for functional polymer patterning

    NASA Astrophysics Data System (ADS)

    Cui, Dehu

    2011-07-01

    Organic semiconductors have generated huge interested in recent years for low-cost and flexible electronics. Current and future device applications for semiconducting polymers include light-emitting diodes, thin-film transistors, photovoltaic cells, photodetectors, lasers, and memories. The performance of conjugated polymer devices depends on two major factors: the chain conformation in polymer film and the device architecture. Highly ordered chain structure usually leads to much improved performance by enhancing interchain interaction to facilitate carrier transport. The goal of this research is to improve the performance of organic devices with the nanoimprint lithography. The work begins with the controlling of polymer chain orientation in patterned nanostructures through nanoimprint mold design and process parameter manipulation, and studying the effect of chain ordering on material properties. Then, step-and-repeat thermal nanoimprint technique for large-scale continuous manufacturing of conjugated polymer nanostructures is developed. After that, Systematic investigation of polymer chain configuration by Raman spectroscopy is carried out to understand how nanoimprint process parameters, such as mold pattern size, temperature, and polymer molecular weight, affects polymer chain configuration. The results indicate that chain orientation in nanoimprinted polymer micro- and nanostructures is highly related to the nanoimprint temperature and the dimensions of the mold structures. The ability to create nanoscale polymer micro- and nanostructures and manipulate their internal chain conformation establishes an original experimental platform that enables studying the properties of functional polymers at the micro- and nanoscale and understanding their fundamental structure-property relationships. In addition to the impact on basic research, the techniques developed in this work are important in applied research and development. Large-area conjugated polymer micro- and

  17. Capillary force lithography for cardiac tissue engineering.

    PubMed

    Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

    2014-06-10

    Cardiovascular disease remains the leading cause of death worldwide(1). Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart's extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale(2). Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering(3-5). A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling(2). Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart(6-9). Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)(8) and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function(10-14). Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively(15,16). Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip

  18. Capillary Force Lithography for Cardiac Tissue Engineering

    PubMed Central

    Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

    2014-01-01

    Cardiovascular disease remains the leading cause of death worldwide1. Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart’s extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale2. Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering3-5. A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling2. Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart6-9. Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)8 and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function10-14. Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively15,16. Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip and the PUA

  19. Comparison study for sub-0.13-μm lithography between ArF and KrF lithography

    NASA Astrophysics Data System (ADS)

    Kim, Seok-Kyun; Kim, YoungSik; Kim, Jin-Soo; Bok, Cheol-Kyu; Ham, Young-Mog; Baik, Ki-Ho

    2000-07-01

    In this paper we investigated the feasibility of printing sub-0.13 micrometers device patterns with ArF and KrF lithography by using experiment and simulation. To do this we evaluated various cell structures with different sizes from 0.26 micrometers to 0.20 micrometers pitch. In experiment 0.60NA ArF and 0.70NA KrF exposure tools, commercial and in house resists and bottom anti-reflective coating (BARC) materials are used. To predict and compare with experimental data we also used our developed simulation tool HOST base don diffused aerial iamge model. We found that ArF lithography performance is a little bit better than KrF and therefore 0.70NA KrF lithography can be used up to 0.12 micrometers design rule device and 0.60NA ArF lithography can be used up to 0.11 micrometers . But to get more than 10 percent expose latitude, 0.13 micrometers with KrF and 0.12 micrometers with ArF are the minimum design rule size. However to obtain process margin we had to use extreme off-axis illumination (OAI) which results in large isolated- dense bias and poor linearity including isolated pattern. Using higher NA can reduce ID bias and mask error factor. For contact hole it is more effective to use KrF lithography because resist thermal flow process can be used to shrink C/H size. Our developed ArF resist and BARC shows good performance and we can reduce k1 value up to 0.34. Through this study we verified again that ArF lithography can be applied for sub-0.13 micrometers device through sub-0.10 micrometers with high contrast resist and 0.75NA exposure tool.

  20. Waveguide effect in high-NA EUV lithography: The key to extending EUV lithography to the 4-nm node

    NASA Astrophysics Data System (ADS)

    Yeung, Michael; Barouch, Eytan; Oh, Hye-Keun

    2015-06-01

    One of the main concerns about EUV lithography is whether or not it can be extended to very high numerical aperture. In this paper, rigorous electromagnetic simulation is first used to show that there is an interesting waveguide effect occurring in the 4-nm feature size regime. An exact mathematical analysis is then presented to explain the effect observed in the simulation. This waveguide effect is applied to simulate the printing of 4-nm lines and spaces with excellent aerial-image contrast and peak intensity. The feasibility of EUV lithography for printing logic circuits containing general two-dimensional patterns with 4-nm feature size is also demonstrated.

  1. Improved Radiometry For Extreme-ultraviolet Lithography

    SciTech Connect

    Tarrio, C.; Vest, R.E.; Grantham, S.; Liu, K.; Lucatorto, T.B.; Shaw, P.S.

    2004-05-12

    The absolute cryogenic radiometer (ACR), an electrical-substitution-based detector, is the most accurate method for measurement of radiant power in the extreme ultraviolet. At the National Institute of Standards and Technology, ACR-based measurements are currently used as standards from the infrared and into the vacuum ultraviolet, however, no radiometric facilities are currently in operation with enough incident power to use an ACR in the extreme-ultraviolet region. Therefore, we have installed transfer optics on an existing beamline to allow the installation of the ACR as an additional endstation. We will describe the current radiometric beamline, the ACR, and the high-throughput beamline, and the transfer-optical system. Finally, we will present the performance of the transfer optics and measurements of the beam profile and incident power of the new endstation.

  2. Alternative high-resolution lithographic technologies for optical applications

    NASA Astrophysics Data System (ADS)

    Zeitner, Uwe D.; Weichelt, Tina; Bourgin, Yannick; Kinder, Robert

    2016-03-01

    Modern optical applications have special demands on the lithographic fabrication technologies. This relates to the lateral shape of the structures as well as to their three dimensional surface profile. On the other hand optical nano-structures are often periodic which allows for the use of dedicated lithographic exposure principles. The paper briefly reviews actual developments in the field of optical nano-structure generation. Special emphasis will be given to two technologies: electron-beam lithography based on a flexible cell-projection method and the actual developments in diffractive mask aligner lithography. Both offer a cost effective fabrication alternative for high resolution structures or three-dimensional optical surface profiles.

  3. Biologically inspired omniphobic surfaces by reverse imprint lithography.

    PubMed

    Hensel, René; Finn, Andreas; Helbig, Ralf; Braun, Hans-Georg; Neinhuis, Christoph; Fischer, Wolf-Joachim; Werner, Carsten

    2014-04-01

    Springtail skin morphology is translated into robust omniphobic polymer membranes by reverse imprint lithography. The combination of overhanging cross-sections and their arrangement in a self-supporting comblike pattern are crucial for mechanically stable coatings that can be even applied to curved surfaces. PMID:24375518

  4. Matrix-assisted polymer pen lithography induced Staudinger Ligation.

    PubMed

    Bian, Shudan; Schesing, Kevin B; Braunschweig, Adam B

    2012-05-21

    The Staudinger Ligation has been combined with Polymer Pen Lithography to create patterns of fluorescent and redox-active inks with 1-micrometer scale feature diameters over centimeter-scale areas. This report presents a straightforward strategy to expand the scope of organic reactions employed in surface science. PMID:22509494

  5. Beyond EUV lithography: a comparative study of efficient photoresists' performance

    PubMed Central

    Mojarad, Nassir; Gobrecht, Jens; Ekinci, Yasin

    2015-01-01

    Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra. PMID:25783209

  6. Beyond EUV lithography: a comparative study of efficient photoresists' performance.

    PubMed

    Mojarad, Nassir; Gobrecht, Jens; Ekinci, Yasin

    2015-01-01

    Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra. PMID:25783209

  7. Condenser for extreme-UV lithography with discharge source

    DOEpatents

    Sweatt, William C.; Kubiak, Glenn D.

    2001-01-01

    Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

  8. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhurl, Avijit K.

    2000-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  9. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhuri, Avijit

    2001-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  10. Effective decomposition algorithm for self-aligned double patterning lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Hongbo; Du, Yuelin; Wong, Martin D. F.; Topaloglu, Rasit; Conley, Will

    2011-04-01

    Self-aligned double patterning (SADP) lithography is a novel lithography technology that has the intrinsic capability to reduce the overlay in the double patterning lithography (DPL). Although SADP is the critical technology to solve the lithography difficulties in sub-32nm 2D design, the questions - how to decompose a layout with reasonable overlay and how to perform a decomposability check - are still two open problems with no published work. In this paper, by formulating the problem into a SAT formation, we can answer the above two questions optimally. This is the first published paper with detailed algorithm to perform the SADP decomposition. In a layout, we can efficiently check whether a layout is decomposable. For a decomposable layout, our algorithm guarantees to find a decomposition solution with reasonable overlay reduction requirement. With little changes on the clauses in the SAT formula, we can address the decomposition problem for both the positive tone process and the negative tone process. Experimental results validate our method, and decomposition results for Nangate Open Cell Library and larger test cases are also provided with competitive run times.

  11. Solid state laser driver for Extreme Ultraviolet Lithography. Revision 1

    SciTech Connect

    Zapata, L.E.; Honig, J.; Reichert, P.; Hackel, L.A.

    1994-05-01

    We describe the design and initial performance of a Nd:YAG laser master oscillator/phase conjugated power amplifier as a driver for extreme ultraviolet lithography. The design provides 0.5 to 1 joule per pulse with about 5 ns pulse width and excellent beam quality up through 1.5 kHz repetition frequency.

  12. Study on photochemical analysis system (VLES) for EUV lithography

    NASA Astrophysics Data System (ADS)

    Sekiguchi, A.; Kono, Y.; Kadoi, M.; Minami, Y.; Kozawa, T.; Tagawa, S.; Gustafson, D.; Blackborow, P.

    2007-03-01

    A system for photo-chemical analysis of EUV lithography processes has been developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch (Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a measurement system RDA (Litho Tech Japan) for the development rate of photo-resists, and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of EUV lithography can be performed without any lithography tool (Stepper and Scanner system) that is capable of imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm wavelength. The simulation successfully predicts the resist behavior. Thus it is confirmed that the system enables efficient evaluation of the performance of EUV lithography processes.

  13. High-precision reflectometry of multilayer coatings for extreme ultraviolet lithography

    SciTech Connect

    Wedowski, M; Underwood, J H; Gullikson, E M; Bajt, S; Folta, J A; Kearney, P A; Montcalm, C; Spiller, E

    1999-12-29

    Synchrotron-based reflectometry is an important technique for the precise determination of optical properties of reflective multilayer coatings for Extreme Ultraviolet Lithography (EUVL). Multilayer coatings enable normal incidence reflectances of more than 65% in the wavelength range between 11 and 15 nm. In order to achieve high resolution and throughput of EUVL systems, stringent requirements not only apply to their mechanical and optical layout, but also apply to the optical properties of the multilayer coatings. Therefore, multilayer deposition on near-normal incidence optical surfaces of projection optics, condenser optics and reflective masks requires suitable high-precision metrology. Most important, due to their small bandpass on the order of only 0.5 nm, all reflective multilayer coatings in EUVL systems must be wavelength-matched to within {+-}0.05 nm. In some cases, a gradient of the coating thickness is necessary for wavelength matching at variable average angle of incidence in different locations on the optical surfaces. Furthermore, in order to preserve the geometrical figure of the optical substrates, reflective multilayer coatings need to be uniform to within 0.01 nm in their center wavelength. This requirement can only be fulfilled with suitable metrology, which provides a precision of a fraction of this value. In addition, for the detailed understanding and the further development of reflective multilayer coatings a precision in the determination of peak reflectances is desirable on the order of 0.1%. Substrates up to 200 mm in diameter and 15 kg in mass need to be accommodated. Above requirements are fulfilled at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley. This beamline proved to be precise within 0.2% (ms) for reflectance and 0.002 nm (rms) for wavelength.

  14. Extreme ultraviolet lithography: A few more pieces of the puzzle

    SciTech Connect

    Anderson, Christopher N.

    2009-05-20

    The work described in this dissertation has improved three essential components of extreme ultraviolet (EUV) lithography: exposure tools, photoresist, and metrology. Exposure tools. A field-averaging illumination stage is presented that enables nonuniform, high-coherence sources to be used in applications where highly uniform illumination is required. In an EUV implementation, it is shown that the illuminator achieves a 6.5% peak-to-valley intensity variation across the entire design field of view. In addition, a design for a stand-alone EUV printing tool capable of delivering 15 nm half-pitch sinusoidal fringes with available sources, gratings and nano-positioning stages is presented. It is shown that the proposed design delivers a near zero line-edge-rougness (LER) aerial image, something extremely attractive for the application of resist testing. Photoresist. Two new methods of quantifying the deprotection blur of EUV photoresists are described and experimentally demonstrated. The deprotection blur, LER, and sensitivity parameters of several EUV photoresists are quantified simultaneously as base weight percent, photoacid generator (PAG) weight percent, and post-exposure bake (PEB) temperature are varied. Two surprising results are found: (1) changing base weight percent does not significantly affect the deprotection blur of EUV photoresist, and (2) increasing PAG weight percent can simultaneously reduce LER and E-size in EUV photoresist. The latter result motivates the development of an EUV exposure statistics model that includes the effects of photon shot noise, the PAG spatial distribution, and the changing of the PAG distribution during the exposure. In addition, a shot noise + deprotection blur model is used to show that as deprotection blur becomes large relative to the size of the printed feature, LER reduction from improved counting statistics becomes dominated by an increase in LER due to reduced deprotection contrast. Metrology. Finally, this

  15. Substrate conformal imprint lithography for nanophotonics

    NASA Astrophysics Data System (ADS)

    Verschuuren, M. A.

    2010-03-01

    The field of nano-photonics studies the interaction and control of light with dielectric, semiconductor and metal structures which are comparable in size or smaller than the vacuum wavelength of light. In this thesis we present Substrate Conformal Imprint Lithography (SCIL) as a novel wafer-scale nanoimprint method with nano-scale resolution which combines the resolution and accuracy of rigid stamps with the flexibility of soft stamp methods. Chapter two describes the SCIL soft nanoimprint process and introduces a novel silica sol-gel imprint resist. A new soft rubber stamp material is described which enables sub-10 nm resolution. We demonstrate that SCIL imprinted patterns have on average less than 0.1 nm distortion and demonstrate sub-50 nm overlay alignment. Chapter 3 demonstrates 30 nm dense structures and features with aspect ratios from 1/640 up to 5. Imprinted sol-gel patterns can be transferred into underlying materials while maintaining sub-10 nm resolution. Two methods are demonstrated to pattern noble metals in particle arrays and sub-wavelength hole arrays. SCIL is applied to produce photonic crystal power InGaN LEDs which exhibit strong modification of the emission pattern. Chapter 4 demonstrates a relatively simple route towards 3D woodpile type photonic crystals. We show a four layer woodpile type structure with 70 nm features on a 240 nm pitch, which is temperature stable up to 1000 C. Chapter 5 demonstrates a novel fabrication route to large area nano hole arrays, which are interesting as angle independent color filters and for sensor applications. A solid state index matched hole array exhibits SPP mediated super resonant transmission. Chapter 6 treats single mode polarization stabilized Vertical Cavity Surface Emitting Lasers (VCSELs). The lasers produced by SCIL exhibit equal performance as devices produced by e-beam. VCSELs with SCIL imprinted sub-wavelength gratings increase the laser efficiency by 29 % compared to conventional gratings

  16. Speckle lithography for fabricating Gaussian, quasi-random 2D structures and black silicon structures.

    PubMed

    Bingi, Jayachandra; Murukeshan, Vadakke Matham

    2015-01-01

    Laser speckle pattern is a granular structure formed due to random coherent wavelet interference and generally considered as noise in optical systems including photolithography. Contrary to this, in this paper, we use the speckle pattern to generate predictable and controlled Gaussian random structures and quasi-random structures photo-lithographically. The random structures made using this proposed speckle lithography technique are quantified based on speckle statistics, radial distribution function (RDF) and fast Fourier transform (FFT). The control over the speckle size, density and speckle clustering facilitates the successful fabrication of black silicon with different surface structures. The controllability and tunability of randomness makes this technique a robust method for fabricating predictable 2D Gaussian random structures and black silicon structures. These structures can enhance the light trapping significantly in solar cells and hence enable improved energy harvesting. Further, this technique can enable efficient fabrication of disordered photonic structures and random media based devices.

  17. Integration of tunable two-dimensional nanostructures on a chip by an improved nanosphere lithography method

    NASA Astrophysics Data System (ADS)

    Ni, Haibin; Wang, Ming; Hao, Hui; Zhou, Jing

    2016-06-01

    By uniform infiltration of a different material into monolayered polystyrene colloidal crystals and by flexibly combining the two materials as etching masks, we demonstrate an improved nanosphere lithography method that possesses the ability to produce a diverse range of tunable nano-patterns in a small area with good reproducibility. The factors that affect the infiltration height and uniformity are characterized and discussed. Annular gap arrays, close-packed ring arrays, and bowl arrays are demonstrated by this method. The geometry size of these nano-patterns can be tuned over the range 10 nm to ∼500 nm with steps of ∼5 nm during the fabrication progress. Formation mechanisms of the close-packed ring arrays are experimentally investigated. Because all the fabrication processes involved in this method are adaptable to sophisticated integrated circuit fabrication techniques, most of the nano-patterns produced by this method could be integrated on thin films, which is desirable for optics integration and array sensing.

  18. Actinic imaging and evaluation of phase structures on EUV lithography masks

    SciTech Connect

    Mochi, Iacopo; Goldberg, Kenneth; Huh, Sungmin

    2010-09-28

    The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and complex amplitude of structures on EUV lithography masks. Many native defects commonly found on EUV reticles are difficult to detect and review accurately because they have a strong phase component. Understanding the complex amplitude of mask features is essential for predictive modeling of defect printability and defect repair. Besides printing in a stepper, the most accurate way to characterize such defects is with actinic inspection, performed at the design, EUV wavelength. Phase defect and phase structures show a distinct through-focus behavior that enables qualitative evaluation of the object phase from two or more high-resolution intensity measurements. For the first time, phase of structures and defects on EUV masks were quantitatively reconstructed based on aerial image measurements, using a modified version of a phase-retrieval algorithm developed to test optical phase shifting reticles.

  19. Ecofriendly antiglare film derived from biomass using ultraviolet curing nanoimprint lithography for high-definition display

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Murakami, Gaku; Mori, Yuto; Ichikawa, Takumi; Sekiguchi, Atsushi; Obata, Tsutomu; Yokoyama, Yoshiyuki; Mizuno, Wataru; Sumioka, Junji; Horita, Yuji

    2013-07-01

    Nanopatterning of an ecofriendly antiglare film derived from biomass using an ultraviolet curing nanoimprint lithography is reported. Developed sugar-related organic compounds with liquid glucose and trehalose derivatives derived from biomass produced high-quality imprint images of pillar patterns with a 230-nm diameter. Ecofriendly antiglare film with liquid glucose and trehalose derivatives derived from biomass was indicated to achieve the real refraction index of 1.45 to 1.53 at 350 to 800 nm, low imaginary refractive index of <0.005 and low volumetric shrinkage of 4.8% during ultraviolet irradiation. A distinctive bulky glucose structure in glucose and trehalose derivatives was considered to be effective for minimizing the volumetric shrinkage of resist film during ultraviolet irradiation, in addition to suitable optical properties for high-definition display.

  20. Gd plasma source modeling at 6.7 nm for future lithography

    SciTech Connect

    Li Bowen; Dunne, Padraig; O'Sullivan, Gerry; Higashiguchi, Takeshi; Yugami, Noboru; Otsuka, Takamitsu; Jiang, Weihua; Endo, Akira

    2011-12-05

    Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd{sup 11+} to Gd{sup 27+} ions which showed that n = 4 - n = 4 resonance transitions overlap in the 6.5-7.0 nm region. Plasma modeling calculations, assuming collisional-radiative equilibrium, predict that the optimum temperature for an optically thin plasma is close to 110 eV and that maximum intensity occurs at 6.76 nm under these conditions. The close agreement between simulated and experimental spectra from laser and discharge produced plasmas indicates the validity of our approach.