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Sample records for 2-digit sic manufacturing

  1. Improved Method of Manufacturing SiC Devices

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.

    2005-01-01

    The phrase, "common-layered architecture for semiconductor silicon carbide" ("CLASSiC") denotes a method of batch fabrication of microelectromechanical and semiconductor devices from bulk silicon carbide. CLASSiC is the latest in a series of related methods developed in recent years in continuing efforts to standardize SiC-fabrication processes. CLASSiC encompasses both institutional and technological innovations that can be exploited separately or in combination to make the manufacture of SiC devices more economical. Examples of such devices are piezoresistive pressure sensors, strain gauges, vibration sensors, and turbulence-intensity sensors for use in harsh environments (e.g., high-temperature, high-pressure, corrosive atmospheres). The institutional innovation is to manufacture devices for different customers (individuals, companies, and/or other entities) simultaneously in the same batch. This innovation is based on utilization of the capability for fabrication, on the same substrate, of multiple SiC devices having different functionalities (see figure). Multiple customers can purchase shares of the area on the same substrate, each customer s share being apportioned according to the customer s production-volume requirement. This makes it possible for multiple customers to share costs in a common foundry, so that the capital equipment cost per customer in the inherently low-volume SiC-product market can be reduced significantly. One of the technological innovations is a five-mask process that is based on an established set of process design rules. The rules provide for standardization of the fabrication process, yet are flexible enough to enable multiple customers to lay out masks for their portions of the SiC substrate to provide for simultaneous batch fabrication of their various devices. In a related prior method, denoted multi-user fabrication in silicon carbide (MUSiC), the fabrication process is based largely on surface micromachining of poly SiC

  2. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  3. Manufacture of large-scale lightweight SiC mirror for space

    NASA Astrophysics Data System (ADS)

    Huang, Zhengren; Liu, Guiling; Liu, Xuejian; Chen, Zhongming; Jiang, Dongliang

    2012-01-01

    Large-scale lightweight silicon carbide (SiC) mirrors were manufactured for space. Sintered SiC (SSiC) ceramic was adopted as the material to manufacture these mirrors. Complex structure designed for highly weight reduction and installation requirements was near-net-shape formed on SiC green body by digital machining technique before the high temperature sintering process. The dimensional accuracy of thin ribs and faceplate can be precisely controlled above 99.5%. During sintering process, the temperature distribution was kept uniform enough to avoid residual stress and deformation in the whole furnace. Isotropic shrinkage occurs during densification from SiC green body to ceramic with a fluctuation less than 0.3%, which is the dimension error of the final size as well. Mirror surface with low surface roughness, high shape accuracy and reflectivity was finished by polishing and plating. Moreover, large-scale lightweight SSiC mirror was demonstrated to be suitable for space use by tests simulating launch conditions and space environments.

  4. SiC Design Guide: Manufacture of Silicon Carbide Products (Briefing charts)

    DTIC Science & Technology

    2010-06-08

    DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. 13. SUPPLEMENTARY NOTES Presented at Mirror Technology Days, Boulder...coatings. 15. SUBJECT TERMS Mirrors , structures, silicon carbide, design, inserts, coatings, pockets, ribs, bonding, threads 16. SECURITY...Prescribed by ANSI Std. 239.18 purify protect transport SiC Design Guide Manufacture of Silicon Carbide Products Mirror Technology Days June 7 to 9, 2010

  5. A 10-kW SiC Inverter with A Novel Printed Metal Power Module With Integrated Cooling Using Additive Manufacturing

    SciTech Connect

    Chinthavali, Madhu Sudhan; Ayers, Curtis William; Campbell, Steven L; Wiles, Randy H; Ozpineci, Burak

    2014-01-01

    With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. This paper focuses on the development of a 10-kW all SiC inverter using a high power density, integrated printed metal power module with integrated cooling using additive manufacturing techniques. This is the first ever heat sink printed for a power electronics application. About 50% of the inverter was built using additive manufacturing techniques.

  6. Embedded SIC-POVMs

    NASA Astrophysics Data System (ADS)

    Dang, Hoan; Blanchfield, Kate; Bengtsson, Ingemar; Appleby, Marcus

    2013-03-01

    Symmetric informationally complete (SIC) sets of quantum states have applications in foundational studies of quantum mechanics, quantum tomography, quantum communication, quantum cryptography, and classical signal processing. However, their existence in every dimension has not been proven, and no general construction has been known. During our study of linear dependencies in Weyl-Heisenberg orbits, we discovered 2-dimensional SICs embedded in a 6-dimensional Hilbert space. This offers a robust construction for 2-dimensional SICs, and may potentially impact the SIC existence problem. In this talk, I will explain how this construction works, and present numerical results for some other dimensions. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada and by the U. S. Office of Naval Research (Grant No. N00014-09-1-0247).

  7. Fabrication of large aperture SiC brazing mirror

    NASA Astrophysics Data System (ADS)

    Li, Ang; Wang, Peipei; Dong, Huiwen; Wang, Peng

    2016-10-01

    The SiC brazing mirror is the mirror whose blank is made by assembling together smaller SiC pieces with brazing technique. Using such kinds of joining techniques, people can manufacture large and complex SiC assemblies. The key technologies of fabricating and testing SiC brazing flat mirror especially for large aperture were studied. The SiC brazing flat mirror was ground by smart ultrasonic-milling machine, and then it was lapped by the lapping smart robot and measured by Coordinate Measuring Machine (CMM). After the PV of the surface below 4um, we did classic coarse polishing to the surface and studied the shape of the polishing tool which directly effects removal amount distribution. Finally, it was figured by the polishing smart robot and measured by Fizeau interferometer. We also studied the influence of machining path and removal functions of smart robots on the manufacturing results and discussed the use of abrasive in this process. At last, an example for fabricating and measuring a similar SiC brazing flat mirror with the aperture of 600 mm made by Shanghai Institute of Ceramics was given. The mirror blank consists of 6 SiC sectors and the surface was finally processed to a result of the Peak-to-Valley (PV) 150nm and Root Mean Square (RMS) 12nm.

  8. SiC for Space Optics

    NASA Astrophysics Data System (ADS)

    Wellman, John

    2012-01-01

    This paper describes SiC mirrors that are large, ultra-lightweight, and actively controlled, for use in space telescopes. "Advanced Hybrid Mirrors” (AHMs) utilize SiC substrates, with embedded solid-state actuators, bonded to Nanolaminate metal foil reflective surfaces. They use replication techniques for high optical quality as well as rapid, low cost manufacturing. AHMs up to 1.35m in size have been made and tested, demonstrating wavefront error to better than the visible diffraction limit. AHMs can be fabricated at production rates after the first unit delivery as fast as 48 day intervals. "Superpolished Si/SiC Active Mirrors” (SSAMs) are similar to AHMs but the SiC mirror substrates have a layer of Si deposited on them to enable direct superpolishing. SSAMs can be much larger, can operate over a wider temperature range, and are better suited to UV astronomy. To make SSAMs larger than 1.8 m, multiple substrates can be joined together, using brazing techniques. Using wavefront sensing and control technology to command the embedded solid-state actuators, final mirror figure will be set after launch. This gives the active SiC mirror the ability to correct nearly any optical error, occurring anywhere in the optical system. As a result, active SiC mirrors can be made to relaxed figure requirements, enabling optical replication, or speeding up polishing, while assuring excellent final performance. Active SiC mirrors will reduce cost, risk and schedule for future astrophysics missions. Their high control authority allows relaxation of fabrication and assembly tolerances from optical to mechanical levels, speeding I & T. They enable rapid system testing to within required performance levels, even in 1 G, lowering mission risk. They are lighter weight and more durable than glass mirrors.

  9. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  10. SiC optics for EUV, UV, and visible space missions

    NASA Astrophysics Data System (ADS)

    Robichaud, Joseph L.

    2003-02-01

    An overview of silicon carbide (SiC) materials is provided, focusing on reaction bonded (RB) SiC and its properties. The Miniature Infrared Camera and Spectrometer (MICAS) and Advanced Land Imager (ALI) SiC space instruments produced by SSGPO and flown under NASA's New Millennium Program are described, and some of the mission requirements associated with UV and extreme UV (EUV) applications are reviewed. Manufacturing options associated with SiC reflectors are reviewed and the optical performance demonstrated with these materials is presented. In order to review the suitability of these materials to UV and EUV missions microroughness and surface scatter results are shown.

  11. Splitting of 2-Digit SIC Codes at 3M's Chemolite Plant

    EPA Pesticide Factsheets

    This document may be of assistance in applying the New Source Review (NSR) air permitting regulations including the Prevention of Significant Deterioration (PSD) requirements. This document is part of the NSR Policy and Guidance Database. Some documents in the database are a scanned or retyped version of a paper photocopy of the original. Although we have taken considerable effort to quality assure the documents, some may contain typographical errors. Contact the office that issued the document if you need a copy of the original.

  12. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... Manufacturing 333Machinery Manufacturing 334Computer and Electronic Product Manufacturing Except 334611—Software... Except facilities primarily engaged in Music copyright authorizing use, Music copyright buying and licensing, and Music publishers working on their own account (previously classified under SIC 8999,...

  13. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... Manufacturing 333Machinery Manufacturing 334Computer and Electronic Product Manufacturing Except 334611—Software... Except facilities primarily engaged in Music copyright authorizing use, Music copyright buying and licensing, and Music publishers working on their own account (previously classified under SIC 8999,...

  14. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... Manufacturing 333Machinery Manufacturing 334Computer and Electronic Product Manufacturing Except 334611—Software... Except facilities primarily engaged in Music copyright authorizing use, Music copyright buying and licensing, and Music publishers working on their own account (previously classified under SIC 8999,...

  15. Current and future industrial energy service characterizations. Volume II. Energy data on the US manufacturing subsector

    SciTech Connect

    Krawiec, F.; Thomas, T.; Jackson, F.; Limaye, D.R.; Isser, S.; Karnofsky, K.; Davis, T.D.

    1980-10-01

    In order to characterize industrial energy service, current energy demand, its end uses, and cost of typical energy applications and resultant services in the industrial sector were examined and a projection of state industrial energy demands and prices to 1990 was developed. Volume II presents in Section 2 data on the US manufacturing subsector energy demand, intensity, growth rates, and cost for 1971, 1974, and 1976. These energy data are disaggregated not only by fuel type but also by user classifications, including the 2-digit SIC industry groups, 3-digit subgroups, and 4-digit SIC individual industries. These data characterize typical energy applications and the resultant services in this subsector. The quantities of fuel and electric energy purchased by the US manufacturing subsector were converted to British thermal units and reported in billions of Btu. The conversion factors are presented in Table 4-1 of Volume I. To facilitate the descriptive analysis, all energy cost and intensity data were expressed in constant 1976 dollars. The specific US industrial energy service characteristics developed and used in the descriptive analysis are presented in Volume I. Section 3 presents the computer program used to produce the tabulated data.

  16. Mid-ultraviolet pulsed laser micromachining of SiC

    NASA Astrophysics Data System (ADS)

    Qi, Litao; Li, Mingxing; Lin, Haipeng; Hu, Jinping; Tang, Qingju; Liu, Chunsheng

    2014-11-01

    This paper provides an investigation of the ablation behavior of single crystal 4H-SiC and 6H-SiC wafer to improve the manufacturability and high-temperature performance of SiC using laser applications. 266nm pulsed laser micromachining of SiC was investigated. The purpose is to establish suitable laser parametric regime for the fabrication of high accuracy, high spatial resolution and thin diaphragms for high-temperature MEMS pressure sensor applications. Etch rate, ablation threshold and quality of micromachined features were evaluated. The governing ablation mechanisms, such as thermal vaporization, phase explosion, and photomechanical fragmentation, were correlated with the effects of pulse energy. The ablation threshold is obtained with ultraviolet pulsed laser ablation. The results suggested ultraviolet pulsed laser's potential for rapid manufacturing. Excellent quality of machined features with little collateral thermal damage was obtained in the lower pulse energy range. The leading material removal mechanisms under these conditions were discussed.

  17. SiC Deep Ultraviolet Avalanche Photodetectors

    DTIC Science & Technology

    2010-10-01

    filters and SEM cross-section of dielectric stack filter. • GE SiC Solar blind detector demonstrated the best response in deep UV spectral region...Bolotnikov, A., Frechette, J., Verghese, S., Grossmann, P., Shaw, G.A. SiC APDs and arrays for UV and solar blind detection (2009) Conference Proceedings...optimized using optical and electrical device simulations , and associated fabrication methods for solar - blind SiC APD arrays have been developed

  18. Research on microwave joining of SiC

    SciTech Connect

    Silberglitt, R.

    1995-07-31

    Results: identification of optimum joining temperature range for reaction bonded Si carbide at 1420-1500 C; demonstration that specimens joined within this range have fracture roughness greater than as-received material; and demonstration of ability to use SiC formed in situ from the decomposition of polycarbosilane as a joining aid for sintered Si carbide. In the latter case, the interlayer material was also shown to fill any pores in the joining specimens near the interlayer. Together with the demonstration of leaktight joints between tube sections of reaction bonded and sintered SiC under the previous contract, these results provide the foundation for scaleup to joining of the larger and longer tubes needed for radiant burner and heat exchanger tube assemblies. The formation of SiC in situ is important because maintaining roundness of these large tubes is a technical challenge for the tube manufacturer, so that formation of a leaktight joint may require some degree of gap filling.

  19. /SiC Composite to Titanium Alloy

    NASA Astrophysics Data System (ADS)

    Hernandez, X.; Jiménez, C.; Mergia, K.; Yialouris, P.; Messoloras, S.; Liedtke, V.; Wilhelmi, C.; Barcena, J.

    2014-08-01

    In view of aerospace applications, an innovative structure for joining a Ti alloy to carbon fiber reinforced silicon carbide has been developed. This is based on the perforation of the CMC material, and this procedure results in six-fold increase of the shear strength of the joint compared to the unprocessed CMC. The joint is manufactured using the active brazing technique and TiCuAg as filler metal. Sound joints without defects are produced and excellent wetting of both the composite ceramic and the metal is observed. The mechanical shear tests show that failure occurs always within the ceramic material and not at the joint. At the CMC/filler, Ti from the filler metal interacts with the SiC matrix to form carbides and silicides. In the middle of the filler region depletion of Ti and formation of Ag and Cu rich regions are observed. At the filler/Ti alloy interface, a layered structure of the filler and Ti alloy metallic elements is formed. For the perforation to have a significant effect on the improvement of the shear strength of the joint appropriate geometry is required.

  20. 29 CFR 510.21 - SIC codes.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false SIC codes. 510.21 Section 510.21 Labor Regulations Relating... Classification of Industries § 510.21 SIC codes. (a) The Conference Report specifically cites Puerto Rico's... stated that data “should be at a level of specificity comparable to the four digit Standard Industry...

  1. Properties of SiC-SiC composites produced using CVR converted graphite cloth to SiC cloth

    SciTech Connect

    Kowbel, W.; Kyriacou, C.; Gao, F.; Bruce, C.A.; Withers, J.C.

    1995-10-01

    Nicalon fiber is the primary reinforcement in SiC-SiC composites currently produced by a variety of techniques including CVI and polymer infiltration. Low strength retention at high temperatures of the Nicalon fibers limits the choice of manufacturing processes which can be employed to produce low cost SiC-SiC composites. MER has developed a new SiC reinforcement based upon a conversion of low cost carbon fabric to SiC via a Chemical Vapor Reaction (CVR) process. This new SiC filaments exhibit an excellent creep resistance at temperatures up to 1,600 C. Several SiC-SiC composites were fabricated using graphite fabric converted to SiC fabric utilizing the CVR process combined with a slurry infiltration and CVI densification. A correlation between processing conditions, microstructure and properties of the SiC-SiC composites are discussed in detail.

  2. Influence of Ni-P Coated SiC and Laser Scan Speed on the Microstructure and Mechanical Properties of IN625 Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Sateesh, N. H.; Kumar, G. C. Mohan; Krishna, Prasad

    2015-12-01

    Nickel based Inconel-625 (IN625) metal matrix composites (MMCs) were prepared using pre-heated nickel phosphide (Ni-P) coated silicon carbide (SiC) reinforcement particles by Direct Metal Laser Sintering (DMLS) additive manufacturing process under inert nitrogen atmosphere to obtain interface influences on MMCs. The distribution of SiC particles and microstructures were characterized using optical and scanning electron micrographs, and the mechanical behaviours were thoroughly examined. The results clearly reveal that the interface integrity between the SiC particles and the IN625 matrix, the mixed powders flowability, the SiC ceramic particles and laser beam interaction, and the hardness, and tensile characteristics of the DMLS processed MMCs were improved effectively by the use of Ni-P coated SiC particles.

  3. Refractory Oxide Coatings on Sic Ceramics

    NASA Technical Reports Server (NTRS)

    Lee, Kang N.; Jacobson, Nathan S.; Miller, Robert A.

    1994-01-01

    Silicon carbide with a refractory oxide coating is potentially a very attractive ceramic system. It offers the desirable mechanical and physical properties of SiC and the environmental durability of a refractory oxide. The development of a thermal shock resistant plasma-sprayed mullite coating on SiC is discussed. The durability of the mullite/SiC in oxidizing, reducing, and molten salt environments is discussed. In general, this system exhibits better behavior than uncoated SiC. Areas for further developments are discussed.

  4. Development of Sic Gas Sensor Systems

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

    2002-01-01

    Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

  5. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    NASA Astrophysics Data System (ADS)

    Ebrahimpour, Omid

    second part of the project. Alumina sol was synthesized by the hydrolysis of Aluminum isopropoxide using the Yoldas method. Alumina sol was homogenous and had a needle-like shape with a thickness of 2--3 nm. Crystalline changes during the heating process of alumina sol were studied using XRD. In addition, Fourier transform infrared (FTIR) spectroscopy was performed to identify the functional groups on the alumina sol surface as a function of temperature. In the third part of the project, the feasibility of the in-situ polymerization technique was investigated to fabricate porous SiC ceramics. In this part, the mixture of SiC and calcined alumina powders were coated by polyethylene via in-situ polymerizing referred to as the polymerization compounding process in a slurry phase. The polymerization was conducted under very moderate operational conditions using the Ziegler-Natta catalyst system. Differential scanning calorimetry (DSC) and TGA analysis and morphological studies (SEM and TEM) revealed the presence of a high density of polyethylene on the surface of SiC and alumina powders. The amount of polymer was controlled by the polymerization reaction time. Most parts of particles were coated by a thin layer of polyethylene and polymer. The porous SiC ceramics, which were fabricated by these treated particles showed higher mechanical and physical properties compared to the samples made without any treatment. The relative intensity of mullite was higher compared to the samples prepared by the traditional process. The effects of the sintering temperature, forming pressure and polymer content were also studied on the physical and mechanical properties of the final product. In the last phase of this research work, the focus of the investigation was to take advantage of both the sol-gel processing and in-situ polymerization method to develop a new process to manufacture mullite-bonded porous SiC ceramic with enhanced mechanical and physical properties. Therefore, first the SiC

  6. Cryogenic Performance of Trex SiC Mirror

    NASA Technical Reports Server (NTRS)

    Foss, Colby; Kane, Dave; Bray, Donald; Hadaway, James

    2005-01-01

    Low cost, high performance lightweight Silicon Carbide (Sic) mirrors provide an alternative to Beryllium mirrors. A Trex Enterprises 0.25m diameter lightweight Sic mirror using its patented Chemical Vapor Composites (CVC) technology was evaluated for its optical performance. CVC Sic is chemically pure, thermally stable, and mechanically stiff. CVC technology yields higher growth rate than that of CVD Sic. NASA has funded lightweight optical materials technology development efforts involving Sic mirrors for future space based telescope programs. As part of these efforts, a Trex Sic was measured interferometrically from room temperature to 30 degrees Kelvin. This paper will discuss the test goals, the test instrumentation, test results, and lessons learned.

  7. Characterization of Liquid Phase Sitered sic and Sic/sic Composite Materials

    NASA Astrophysics Data System (ADS)

    Lee, Moon Hee; Lee, Sang Pill; Hur, Kwan Do

    The characterization of liquid phase sintered(LPS) SiC based materials has been investigated with the analysis of microstructure and flexural strength. Especially, LPS-SiC materials were examined for the variation of test temperature and composition ratios (Al2O3,/Y2O3) of sintering additives. LPS-SiC based materials were fabricated by hot pressing(HP) associated with the liquid phase formation of sintering additives(Al2O3,Y2O3). LPS-SiCf/SiC composites were also fabricated with plane-woven(PW) Tyranno-SA fibers without an interfacial layer. LPS-SiC materials showed a dense morphology with the creation of the secondary phase like YAG. The composition ratio of sintering additives led to the variation of sintered density and flexural strength. The flexural strength of LPS-SiC materials was greatly decreased at the temperature higher than 1000°C. LPS-SiCf/SiC composites represented an average flexural strength of about 260 MPa, accompanying the catastrophic fracture behavior without any full-out phenomena.

  8. Advanced Manufacturing

    DTIC Science & Technology

    2002-01-01

    manufacturing will enable the mass customization of products and create new market opportunities in the commercial sector. Flexible manufacturing ...the mass customization of products and create new market opportunities in the commercial sector. One of the most promising flexible manufacturing ... manufacturing , increase efficiency and productivity. Research in leading edge technologies continues to promise exciting new manufacturing methods

  9. C60 on SiC nanomesh.

    PubMed

    Chen, Wei; Zhang, Hong Liang; Xu, Hai; Tok, Eng Soon; Loh, Kian Ping; Wee, Andrew Thye Shen

    2006-11-02

    A SiC nanomesh is used as a nanotemplate to direct the epitaxy of C60 molecules. The epitaxial growth of C60 molecules on SiC nanomesh at room temperature is investigated by in situ scanning tunneling microscopy, revealing a typical Stranski-Krastanov mode (i.e., for the first one or two monolayers, it is a layer-by-layer growth or 2-D nucleation mode; at higher thicknesses, it changes to island growth or a 3-D nucleation mode). At submonolayer (0.04 and 0.2 ML) coverage, C60 molecules tend to aggregate to form single-layer C60 islands that mainly decorate terrace edges, leaving the uncovered SiC nanomesh almost free of C60 molecules. At 1 ML C60 coverage, a complete wetting layer of hexagonally close-packed C60 molecules forms on top of the SiC nanomesh. At higher coverage from 4.5 ML onward, the C60 stacking adopts a (111) oriented face-centered-cubic (fcc) structure. Strong bright and dim molecular contrasts have been observed on the first layer of C60 molecules, which are proposed to originate from electronic effects in a single-layer C60 island or the different coupling of C60 molecules to SiC nanomesh. These STM molecular contrast patterns completely disappear on the second and all the subsequent C60 layers. It is also found that the nanomesh can be fully recovered by annealing the C60/SiC nanomesh sample at 200 degrees C for 20 min.

  10. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This cutaway illustration shows the Saturn V S-IC (first) stage with detailed callouts of the components. The S-IC Stage is 138 feet long and 33 feet in diameter, producing 7,500,000 pounds of thrust through five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  11. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Tian, Y.L.

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  12. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    1967-01-01

    This illustration shows a cutaway drawing with callouts of the major components for the S-IC (first) stage of the Saturn V launch vehicle. The S-IC stage is 138 feet long and 33 feet in diameter, producing more than 7,500,000 pounds of thrust through five F-1 engines powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimball for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  13. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    1968-01-01

    This is a cutaway view of the Saturn V first stage, known as the S-IC, detailing the five F-1 engines and fuel cells. The S-IC stage is 138 feet long and 33 feet in diameter, producing more than 7,500,000 pounds of thrust through the five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  14. SiC MEMS For Harsh Environments

    DTIC Science & Technology

    2003-12-01

    allowed for high g shock loading of a functioning SiC MEMS accelerometer , with published results [1]. 2 2 HIGH TEMPERATURE TESTING OF SiC Measuring...2800 °C, thus capable of being operated in the temperature range of 600-1000 °C [4,5]. The need for the mechanical properties (modulus) of these SiC...VOR-MELT rheometers used for mechanical modulus measurements had a solids fixture, which held both ends of a vertically oriented rectangular cross

  15. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Black, W.M.

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  16. Universal Converter Using SiC

    SciTech Connect

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  17. Passive SiC irradiation temperature monitor

    SciTech Connect

    Youngblood, G.E.

    1996-04-01

    A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

  18. Manufacturing Success

    ERIC Educational Resources Information Center

    Reese, Susan

    2007-01-01

    According to the National Association of Manufacturers (NAM), "manufacturing is the engine that drives American prosperity". When NAM and its research and education arm, The Manufacturing Institute, released the handbook, "The Facts About Modern Manufacturing," in October 2006, NAM President John Engler noted, that…

  19. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2010-01-01

    Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

  20. In vitro cellular responses to silicon carbide particles manufactured through the Acheson process: impact of physico-chemical features on pro-inflammatory and pro-oxidative effects.

    PubMed

    Boudard, Delphine; Forest, Valérie; Pourchez, Jérémie; Boumahdi, Najih; Tomatis, Maura; Fubini, Bice; Guilhot, Bernard; Cottier, Michèle; Grosseau, Philippe

    2014-08-01

    Silicon carbide (SiC) an industrial-scale product manufactured through the Acheson process, is largely employed in various applications. Its toxicity has been poorly investigated. Our study aims at characterizing the physico-chemical features and the in vitro impact on biological activity of five manufactured SiC powders: two coarse powders (SiC C1/C2), two fine powders (SiC F1/F2) and a powder rich in iron impurities (SiC I). RAW 264.7 macrophages were exposed to the different SiC particles and the cellular responses were evaluated. Contrary to what happens with silica, no SiC cytotoxicity was observed but pro-oxidative and pro-inflammatory responses of variable intensity were evidenced. Oxidative stress (H₂O₂ production) appeared related to SiC particle size, while iron level regulated pro-inflammatory response (TNFα production). To investigate the impact of surface reactivity on the biological responses, coarse SiC C1 and fine SiC F1 powders were submitted to different thermal treatments (650-1400 °C) in order to alter the oxidation state of the particle surface. At 1400 °C a decrease in TNFα production and an increase in HO·, COO(·-) radicals production were observed in correlation with the formation of a surface layer of crystalline silica. Finally, a strong correlation was observed between surface oxidation state and in vitro toxicity.

  1. STS-70 Launch - Nikon E-2 Digital Image

    NASA Technical Reports Server (NTRS)

    1995-01-01

    This test image was taken with a Nikon E-2 Digital Imaging System camera and are provided courtesy of Nikon (GIF 450x450 JPEG 1280x1000): The second Shuttle launch in 16 days hurtles off the pad into a sweltering summer sky. The unstable weather typical to Florida in the summertime didn't have a chance to coalesce and impact this morning's launch window, and the Space Shuttle Discovery began its planned seven-day, 22-hour flight on Mission STS-70 from Launch Pad 39B at 9:41:55.078 a.m. EDT, just seconds off schedule. On board for Discovery's 21st spaceflight are a crew of five: Commander Terence 'Tom' Henricks; Pilot Kevin R. Kregel; and Mission Specialists Nancy Jane Currie, Donald A. Thomas and Mary Ellen Weber. The crew's primary objective during the 70th Shuttle flight is to deploy the Tracking and Data Relay Satellite (TDRS-G), which will join a constellation of other TDRS spacecraft already on orbit. TDRS-G is destined to become an on- orbit, fully operational 'ready reserve' satellite, available along with one other ready reserve TDRS spacecraft to back up the two primary TDRS satellites positions, TDRS East over the Atlantic Ocean and TDRS West over the Pacific. Assured capability of the TDRS communications network is essential for linking Earth-orbiting spacecraft such as the Shuttle and the Hubble Space Telescope with the ground.

  2. STS-70 Launch - Nikon E-2 Digital Image

    NASA Technical Reports Server (NTRS)

    1995-01-01

    This test images was taken with a Nikon E-2 Digital Imaging System camera and are provided courtesy of Nikon (GIF 450x450 JPEG 1280x1000): The second Shuttle launch in 16 days hurtles off the pad into a sweltering summer sky. The unstable weather typical to Florida in the summertime didn't have a chance to coalesce and impact this morning's launch window, and the Space Shuttle Discovery began its planned seven-day, 22-hour flight on Mission STS-70 from Launch Pad 39B at 9:41:55.078 a.m. EDT, just seconds off schedule. On board for Discovery's 21st spaceflight are a crew of five: Commander Terence 'Tom' Henricks; Pilot Kevin R. Kregel; and Mission Specialists Nancy Jane Currie, Donald A. Thomas and Mary Ellen Weber. The crew's primary objective during the 70th Shuttle flight is to deploy the Tracking and Data Relay Satellite (TDRS-G), which will join a constellation of other TDRS spacecraft already on orbit. TDRS-G is destined to become an on- orbit, fully operational 'ready reserve' satellite, available along with one other ready reserve TDRS spacecraft to back up the two primary TDRS satellites positions, TDRS East over the Atlantic Ocean and TDRS West over the Pacific. Assured capability of the TDRS communications network is essential for linking Earth-orbiting spacecraft such as the Shuttle and the Hubble Space Telescope with the ground.

  3. Optical characterization of SiC wafers

    SciTech Connect

    Burton, J.C.; Pophristic, M.; Long, F.H.; Ferguson, I.

    1999-07-01

    Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The two-phonon Raman spectra from both 4H- and 6H-SiC have been measured and found to be polytype dependent, consistent with changes in the vibrational density of states. They have observed electronic Raman scattering from nitrogen defect levels in both 4H- and 6H-SiC at room temperature. They have found that electronic Raman scattering from the nitrogen defect levels is significantly enhanced with excitation by red or near IR laser light. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. These results suggest that Raman spectroscopy can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. They also present results on time-resolved photoluminescence spectra of n-type SiC wafers.

  4. Ultralight, Strong, Three-Dimensional SiC Structures.

    PubMed

    Chabi, Sakineh; Rocha, Victoria G; García-Tuñón, Esther; Ferraro, Claudio; Saiz, Eduardo; Xia, Yongde; Zhu, Yanqiu

    2016-02-23

    Ultralight and strong three-dimensional (3D) silicon carbide (SiC) structures have been generated by the carbothermal reduction of SiO with a graphene foam (GF). The resulting SiC foams have an average height of 2 mm and density ranging between 9 and 17 mg cm(-3). They are the lightest reported SiC structures. They consist of hollow struts made from ultrathin SiC flakes and long 1D SiC nanowires growing from the trusses, edges, and defect sites between layers. AFM results revealed an average flake thickness of 2-3 nm and lateral size of 2 μm. In-situ compression tests in the scanning electron microscope (SEM) show that, compared with most of the existing lightweight foams, the present 3D SiC exhibited superior compression strengths and significant recovery after compression strains of about 70%.

  5. Manufacturing technologies

    NASA Astrophysics Data System (ADS)

    The Manufacturing Technologies Center is at the core of Sandia National Laboratories' advanced manufacturing effort which spans the entire product realization process. The center's capabilities in product and process development are summarized in the following disciplines: (1) mechanical - rapid prototyping, manufacturing engineering, machining and computer-aided manufacturing, measurement and calibration, and mechanical and electronic manufacturing liaison; (2) electronics - advanced packaging for microelectronics, printed circuits, and electronic fabrication; and (3) materials - ceramics, glass, thin films, vacuum technology, brazing, polymers, adhesives, composite materials, and process analysis.

  6. Polishing, coating, and integration of SiC mirrors for space telescopes

    NASA Astrophysics Data System (ADS)

    Rodolfo, Jacques

    2008-07-01

    In the last years, the technology of SiC mirrors took an increasingly significant part in the field of space telescopes. Sagem is involved in the JWST program to manufacture and test the optical components of the NIRSpec instrument. The instrument is made of 3 TMAs and 4 plane mirrors made of SiC. Sagem is in charge of the CVD cladding, the polishing, the coating of the mirrors and the integration and testing of the TMAs. The qualification of the process has been performed through the manufacturing and testing of the qualification model of the FOR TMA. This TMA has shown very good performances both at ambient and during the cryo test. The polishing process has been improved for the manufacturing of the flight model. This improvement has been driven by the BRDF performance of the mirror. This parameter has been deeply analysed and a model has been built to predict the performance of the mirrors. The existing Dittman model have been analysed and found to be optimistic.

  7. Structural and magnetic properties of irradiated SiC

    SciTech Connect

    Wang, Yutian; Helm, Manfred; Chen, Xuliang; Yang, Zhaorong; Li, Lin; Shalimov, Artem; Prucnal, Slawomir; Munnik, Frans; Skorupa, Wolfgang; Zhou, Shengqiang; Tong, Wei

    2014-05-07

    We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance, and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC, which mutually influences the ferromagnetism in SiC.

  8. Simulation analysis of grinding wheel motion trajectory on SiC ceramics aspheric surface grinding

    NASA Astrophysics Data System (ADS)

    Zhang, Feihu; Liu, Lifei; Li, Chunhui

    2014-08-01

    In grinding process of SiC ceramics aspheric surface, the motion trajectory of grinding wheel has great influence on the surface forming. The paper provides mathematical models of grinding wheel movements; analytical simulation was done to describe the trajectories of the grinding wheel in manufacturing an aspherical workpiece. The effect of grinding parameters (including the rotation speed of the workpiece, the feed rate of grinding wheel etc.) on the aspheric surface coverage rate was conducted and discussed in detail. An experimental study was done according to the simulation results and an aspheric surface with form error less than 10μm was gained.

  9. SiC Power MOSFET with Improved Gate Dielectric

    SciTech Connect

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  10. Paralinear Oxidation of CVD SiC in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Hann, Raiford E., Jr.

    1997-01-01

    The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

  11. Cable manufacture

    NASA Technical Reports Server (NTRS)

    Gamble, P.

    1972-01-01

    A survey is presented of flat electrical cable manufacturing, with particular reference to patented processes. The economics of manufacture based on an analysis of material and operating costs is considered for the various methods. Attention is given to the competitive advantages of the several processes and their resulting products. The historical area of flat cable manufacture is presented to give a frame of reference for the survey.

  12. Manufacturing technologies

    SciTech Connect

    1995-09-01

    The Manufacturing Technologies Center is an integral part of Sandia National Laboratories, a multiprogram engineering and science laboratory, operated for the Department of Energy (DOE) with major facilities at Albuquerque, New Mexico, and Livermore, California. Our Center is at the core of Sandia`s Advanced Manufacturing effort which spans the entire product realization process.

  13. Manufacturing Technology.

    ERIC Educational Resources Information Center

    Barnes, James L.

    This curriculum guide is designed to assist junior high school industrial arts teachers in planning new courses and revising existing courses in manufacturing technology. Addressed in the individual units of the guide are the following topics: introduction to manufacturing, materials processing, personnel management, production management,…

  14. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  15. Three-dimensional crystalline SiC nanowire flowers

    NASA Astrophysics Data System (ADS)

    Ho, Ghim Wei; Weng Wong, Andrew See; Kang, Dae-Joon; Welland, Mark E.

    2004-08-01

    Several techniques have already been developed for synthesizing silicon carbide (SiC) material in the form of nanospheres and nanowires/rods. Here, we report the synthesis of a distinctly different kind of SiC nanostructure in the form of three-dimensional crystalline nanowire-based flower-like structures. Interest in such structures centres around the combination of a simple growth process based on SiC nanowire formation, with a resultant structure having potentially complex mechanical and optical properties, the latter a consequence of the wide band gap of bulk SiC. The synthesis of these SiC nanowire flowers is via a vapour-liquid-solid (VLS) process, on which a detailed study of both the chemical and structural composition has been carried out.

  16. Manufacturing technology

    SciTech Connect

    Blaedel, K.L.

    1997-02-01

    The specific goals of the Manufacturing Technology thrust area are to develop an understanding of fundamental fabrication processes, to construct general purpose process models that will have wide applicability, to document our findings and models in journals, to transfer technology to LLNL programs, industry, and colleagues, and to develop continuing relationships with industrial and academic communities to advance our collective understanding of fabrication processes. Advances in four projects are described here, namely Design of a Precision Saw for Manufacturing, Deposition of Boron Nitride Films via PVD, Manufacturing and Coating by Kinetic Energy Metallization, and Magnet Design and Application.

  17. Estimates of emergency operating capacity in US manufacturing and nonmanufacturing industries

    SciTech Connect

    Belzer, D.B. ); Serot, D.E. ); Kellogg, M.A. )

    1991-03-01

    Development of integrated mobilization preparedness policies requires planning estimates of available productive capacity during national emergency conditions. Such estimates must be developed in a manner that allows evaluation of current trends in capacity and the consideration of uncertainties in various data inputs and in engineering assumptions. This study, conducted by Pacific Northwest Laboratory (PNL), developed estimates of emergency operating capacity (EOC) for 446 manufacturing industries at the 4-digit Standard Industrial Classification (SIC) level of aggregation and for 24 key non-manufacturing sectors. This volume presents tabular and graphical results of the historical analysis and projections for each SIC industry. (JF)

  18. Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  19. Smart Manufacturing.

    PubMed

    Davis, Jim; Edgar, Thomas; Graybill, Robert; Korambath, Prakashan; Schott, Brian; Swink, Denise; Wang, Jianwu; Wetzel, Jim

    2015-01-01

    Historic manufacturing enterprises based on vertically optimized companies, practices, market share, and competitiveness are giving way to enterprises that are responsive across an entire value chain to demand dynamic markets and customized product value adds; increased expectations for environmental sustainability, reduced energy usage, and zero incidents; and faster technology and product adoption. Agile innovation and manufacturing combined with radically increased productivity become engines for competitiveness and reinvestment, not simply for decreased cost. A focus on agility, productivity, energy, and environmental sustainability produces opportunities that are far beyond reducing market volatility. Agility directly impacts innovation, time-to-market, and faster, broader exploration of the trade space. These changes, the forces driving them, and new network-based information technologies offering unprecedented insights and analysis are motivating the advent of smart manufacturing and new information technology infrastructure for manufacturing.

  20. Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

    NASA Technical Reports Server (NTRS)

    Speer, Kevin M.

    2004-01-01

    Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of

  1. Compatibility of SiC and SiC Composites with Molten Lead

    SciTech Connect

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  2. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  3. SiC Composite Turbine Vanes

    NASA Technical Reports Server (NTRS)

    Calomino, Anthony M.; Verilli, Michael J.

    2006-01-01

    Turbine inlet guide vanes have been fabricated from composites of silicon carbide fibers in silicon carbide matrices. A unique design for a cloth made from SiC fibers makes it possible to realize the geometric features necessary to form these vanes in the same airfoil shapes as those of prior metal vanes. The fiber component of each of these vanes was made from SiC-fiber cloth coated with boron nitride. The matrix was formed by chemical-vapor infiltration with SiC, then slurry-casting of SiC, followed by melt infiltration with silicon. These SiC/SiC vanes were found to be capable of withstanding temperatures 400 F (222 C) greater than those that can be withstood by nickel-base-superalloy turbine airfoils now in common use in gas turbine engines. The higher temperature capability of SiC/SiC parts is expected to make it possible to use them with significantly less cooling than is used for metallic parts, thereby enabling engines to operate more efficiently while emitting smaller amounts of NOx and CO. The SiC/SiC composite vanes were fabricated in two different configurations. Each vane of one of the configurations has two internal cavities formed by a web between the suction and the pressure sides of the vane. Each vane of the other configuration has no web (see Figure 1). It is difficult to fabricate components having small radii, like those of the trailing edges of these vanes, by use of stiff stoichiometric SiC fibers currently preferred for SiC/SiC composites. To satisfy the severe geometric and structural requirements for these vanes, the aforementioned unique cloth design, denoted by the term Y-cloth, was conceived (see Figure 2). In the regions away from the trailing edge, the Y-cloth features a fiber architecture that had been well characterized and successfully demonstrated in combustor liners. To form a sharp trailing edge (having a radius of 0.3 mm), the cloth was split into two planes during the weaving process. The fiber tows forming the trailing

  4. REVIEW ARTICLE: SiC sensors: a review

    NASA Astrophysics Data System (ADS)

    Wright, N. G.; Horsfall, A. B.

    2007-10-01

    Silicon carbide has attracted considerable attention in recent years as a potential material for sensor devices. This paper reviews the current status of SiC technology for a wide range of sensor applications. It is shown that SiC MEMs devices are well-established with operational devices demonstrated at high temperatures (up to 500 °C) for the sensing of motion, acceleration and gas flow. SiC sensors devices using electrical properties as the sensing mechanism have also been demonstrated principally for gas composition and radiation detection and have wide potential use in scientific, medical and combustion monitoring applications.

  5. Polymer precursors for SiC ceramic materials

    NASA Technical Reports Server (NTRS)

    Litt, Morton H.

    1986-01-01

    Work on precursor polymers to SiC was performed, concentrating on polymers made from decamethyl cyclohexasilyene units. The initial approach was to synthesize mixed diphenyl decamethyl cyclohexasilane, dephenylate, and polymerize. This produced polymers which had yields of up to 50 percent SiC. (Theoretical yield is 75 percent). The present approach is to make the polymer through the intermediate trans-1,4-diphenyl decamethyl cyclohexasilane. This should produce a crystalline polymer and high strength fibers. These will be thermally decomposed to SiC fibers. This requires new chemistry which is currently being studied.

  6. Bubble formation in oxide scales on SiC

    NASA Technical Reports Server (NTRS)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  7. Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

    NASA Astrophysics Data System (ADS)

    Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

    2017-03-01

    This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

  8. Microwave joining of SiC ceramics and composites

    SciTech Connect

    Ahmad, I.; Silberglitt, R.; Tian, Y.L.; Katz, J.D.

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  9. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2011-01-01

    Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

  10. Compensation in epitaxial cubic SiC films

    NASA Technical Reports Server (NTRS)

    Segall, B.; Alterovitz, S. A.; Haugland, E. J.; Matus, L. G.

    1986-01-01

    Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energies, E sub D, are less than one half the values previously reported. The values for E sub D and the donor concentration N sub D, combined with results for small bulk platelets with nitrogen donors, suggest the relation E sub D (N sub D) = E sub D(O) - alpha N sub N sup 1/3 for cubic SiC. A curve fit gives alpha is approx 2.6x10/5 meV cm and E sub D (O) approx 48 meV, which is the generally accepted value of E sub D(O) for nitrogen donors in cubic SiC.

  11. Observations of Ag diffusion in ion implanted SiC

    NASA Astrophysics Data System (ADS)

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Hunter, Jerry L.; Giordani, Andrew J.; Allen, Todd R.

    2015-06-01

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500-1625 °C, were investigated by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  12. Observations of Ag diffusion in ion implanted SiC

    SciTech Connect

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Jerry L. Hunter, Jr.; Giordani, Andrew J.; Allen, Todd R.

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  13. Performance Limiting Defects in SiC Based Transistors

    DTIC Science & Technology

    2006-11-01

    1 PERFORMANCE LIMITING DEFECTS IN SIC BASED TRANSISTORS P.M. Lenahan*, M.S. Dautrich, C.J. Cochrane, Pennsylvania State University University...oxide semiconductor field effect transistors (MOSFETs) and SiC based bipolar junction transistors (BJTs). The focus has been upon those defects which...of transistors (Lenahan, Jupina, 1990). SDR exploits the fact that recombination in semiconductors is spin dependent (Lepine, 1972; Kaplan et al

  14. Synthesis of micro-sized interconnected Si-C composites

    DOEpatents

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  15. UV-induced SiC nanowire sensors

    NASA Astrophysics Data System (ADS)

    Peng, Gang; Zhou, Yingqiu; He, Yanlan; Yu, Xiaoyan; Zhang, Xue A.; Li, Gong Y.; Haick, Hossam

    2015-02-01

    Ultraviolet (UV)-induced sensors based on a single SiC nanowire (NW) were fabricated and the photoelectric properties including I-V characteristics and time response of the UV sensors were studied. SiC NWs (NWs) were prepared through pyrolyzing a polymer precursor with ferrocene as the catalyst by a CVD route. To elucidate the physical mechanism giving rise to the photoelectrical response in SiC NW sensors, three kinds of contacts between electrodes and SiC NW were prepared, i.e. Schottky contact, p-n junction contact, and Ohmic contact. The photoelectric measurements of the device with Schottky contact indicates the lowest dark current and the largest photocurrent. The results suggest that photocurrent generated at SiC NW-electrode contacts is a result of the photovoltaic effect, in which a built-in electric field accelerates photo generated charge carriers to the electronic contacts. The UV sensors based on SiC NWs could be applied in a harsh environment due to the excellent physical stability and photoelectric properties.

  16. Report on status of execution of SiC step document

    SciTech Connect

    Katoh, Yutai; Terrani, Kurt A.

    2015-02-01

    Advanced fuel claddings made entirely or mainly of silicon carbide (SiC) ceramics and/or composites are considered very attractive elements of the accident-tolerant fuels for the light water reactors. In order to translate the promise of SiC composite materials into a reliable fuel cladding, a coordinated program of component level design and materials development must be carried out with many key feasibility issues addressed a-priori to inform the process. With the primary objective of developing a draft blueprint of a technical program that addresses the critical feasibility issues; assesses design and performance issues related with manufacturing, operating, and off-normal events; and advances the technological readiness levels in essential technology elements, a draft plan for the Systematic Technology Evaluation Program for SiC/SiC Composite Accident-Tolerant LWR Fuel Cladding and Core Structures was developed in the FY-14 Advanced Fuels Campaign of the U.S. Department of Energy’s Fuel Cycles Research and Development Program. This document summarizes the status of execution of the technical plan within the activities at the Oak Ridge National Laboratory.

  17. Apparel Manufacture

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Marshall Space Flight Center teamed with the University of Alabama in Huntsville (UAH) in 1989 on a program involving development of advanced simulation software. Concurrently, the State of Alabama chartered UAH to conduct a technology advancement program in support of the state's apparel manufacturers. In 1992, under contract to Marshall, UAH developed an apparel-specific software package that allows manufacturers to design and analyze modules without making an actual investment -- it functions on ordinary PC equipment. By 1995, Marshall had responded to requests for the package from more than 400 companies in 36 states; some of which reported savings up to $2 million. The National Garment Company of Missouri, for example, uses the system to design and balance a modular line before committing to expensive hardware; for setting up sewing lines; and for determining the composition of a new team.

  18. Manufacturing technology

    SciTech Connect

    Leonard, J.A.; Floyd, H.L.; Goetsch, B.; Doran, L.

    1993-08-01

    This bulletin depicts current research on manufacturing technology at Sandia laboratories. An automated, adaptive process removes grit overspray from jet engine turbine blades. Advanced electronic ceramics are chemically prepared from solution for use in high- voltage varistors. Selective laser sintering automates wax casting pattern fabrication. Numerical modeling improves performance of photoresist stripper (simulation on Cray supercomputer reveals path to uniform plasma). And mathematical models help make dream of low- cost ceramic composites come true.

  19. SiC protective coating for photovoltaic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

    2016-08-01

    Objective. To evaluate plasma-enhanced, chemically vapor deposited (PECVD) amorphous silicon carbide (α-SiC:H) as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach. Retinal prostheses were implanted in rats sub-retinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiN x and thermal SiO2 were measured in accelerated soaking tests in saline at 87 °C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results. At 87 °C SiN x dissolved at 18.3 ± 0.3 nm d-1, while SiO2 grown at high temperature (1000 °C) dissolved at 0.104 ± 0.008 nm d-1. SiC films demonstrated the best stability, with no quantifiable change after 112 d. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance. SiC coatings demonstrating no erosion in accelerated aging test for 112 d at 87 °C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4 month follow-up in vivo. The optimal thickness of SiC layers is about 560 nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects.

  20. Green Manufacturing

    SciTech Connect

    Patten, John

    2013-12-31

    Green Manufacturing Initiative (GMI): The initiative provides a conduit between the university and industry to facilitate cooperative research programs of mutual interest to support green (sustainable) goals and efforts. In addition to the operational savings that greener practices can bring, emerging market demands and governmental regulations are making the move to sustainable manufacturing a necessity for success. The funding supports collaborative activities among universities such as the University of Michigan, Michigan State University and Purdue University and among 40 companies to enhance economic and workforce development and provide the potential of technology transfer. WMU participants in the GMI activities included 20 faculty, over 25 students and many staff from across the College of Engineering and Applied Sciences; the College of Arts and Sciences' departments of Chemistry, Physics, Biology and Geology; the College of Business; the Environmental Research Institute; and the Environmental Studies Program. Many outside organizations also contribute to the GMI's success, including Southwest Michigan First; The Right Place of Grand Rapids, MI; Michigan Department of Environmental Quality; the Michigan Department of Energy, Labor and Economic Growth; and the Michigan Manufacturers Technical Center.

  1. 29 CFR 510.21 - SIC codes.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE MINIMUM WAGE PROVISIONS OF THE 1989 AMENDMENTS TO THE FAIR LABOR STANDARDS ACT IN PUERTO RICO... annual Census of Manufacturing Industries as a source of average hourly wage data by industry....

  2. 29 CFR 510.21 - SIC codes.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE MINIMUM WAGE PROVISIONS OF THE 1989 AMENDMENTS TO THE FAIR LABOR STANDARDS ACT IN PUERTO RICO... annual Census of Manufacturing Industries as a source of average hourly wage data by industry....

  3. 29 CFR 510.21 - SIC codes.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE MINIMUM WAGE PROVISIONS OF THE 1989 AMENDMENTS TO THE FAIR LABOR STANDARDS ACT IN PUERTO RICO... annual Census of Manufacturing Industries as a source of average hourly wage data by industry....

  4. 29 CFR 510.21 - SIC codes.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE MINIMUM WAGE PROVISIONS OF THE 1989 AMENDMENTS TO THE FAIR LABOR STANDARDS ACT IN PUERTO RICO... annual Census of Manufacturing Industries as a source of average hourly wage data by industry....

  5. Reaction-Based SiC Materials for Joining Silicon Carbide Composites for Fusion Energy

    SciTech Connect

    Lewinsohn, Charles A.; Jones, Russell H.; Singh, M.; Serizawa, H.; Katoh, Y.; Kohyama, A.

    2000-09-01

    The fabrication of large or complex silicon carbide-fiber-reinforced silicon carbide (SiC/SiC) components for fusion energy systems requires a method to assemble smaller components that are limited in size by manufacturing constraints. Previous analysis indicates that silicon carbide should be considered as candidate joint materials. Two methods to obtain SiC joints rely on a reaction between silicon and carbon to produce silicon carbide. This report summarizes preliminary mechanical properties of joints formed by these two methods. The methods appear to provide similar mechanical properties. Both the test methods and materials are preliminary in design and require further optimization. In an effort to determine how the mechanical test data is influenced by the test methodology and specimen size, plans for detailed finite element modeling (FEM) are presented.

  6. X-ray fluorescence microtomography of SiC shells

    SciTech Connect

    Ice, G.E.; Chung, J.S.; Nagedolfeizi, M.

    1997-04-01

    TRISCO coated fuel particles contain a small kernel of nuclear fuel encapsulated by alternating layers of C and SiC. The TRISCO coated fuel particle is used in an advanced fuel designed for passive containment of the radioactive isotopes. The SiC layer provides the primary barrier for radioactive elements in the kernel. The effectiveness of this barrier layer under adverse conditions is critical to containment. The authors have begun the study of SiC shells from TRISCO fuel. They are using the fluorescent microprobe beamline 10.3.1. The shells under evaluation include some which have been cycled through a simulated core melt-down. The C buffer layers and nuclear kernels of the coated fuel have been removed by laser drilling through the SiC and then exposing the particle to acid. Elements of interest include Ru, Sb, Cs, Ce and Eu. The radial distribution of these elements in the SiC shells can be attributed to diffusion of elements in the kernel during the melt-down. Other elements in the shells originate during the fabrication of the TRISCO particles.

  7. Amorphization of SiC under ion and neutron irradiation

    NASA Astrophysics Data System (ADS)

    Snead, L. L.; Zinkle, S. J.; Hay, J. C.; Osborne, M. C.

    1998-05-01

    This paper presents results on the microstructure and physical properties of SiC amorphized by both ion and neutron irradiation. Specifically, 0.56 MeV Si ions have been implanted in single crystal 6H-SiC from ambient through >200°C and the critical threshold for amorphization was measured as a function of the irradiation temperature. From a high resolution transmission electron microscopy (HRTEM) study of the crystalline to amorphous transition region in these materials, elongated pockets of amorphous material oriented parallel to the free surface are observed. Single crystal 6H-SiC and hot pressed and sintered 6H and 3C SiC were neutron irradiated at approximately 70°C to a dose of ˜2.56 dpa causing complete amorphization. Property changes resulting from the crystal to amorphous transition in SiC include a density decrease of 10.8%, a hardness decrease from 38.7 to 21.0 GPa, and a decrease in elastic modulus from 528 to 292 GPa. Recrystallization of the amorphized, single crystal 6H-SiC appears to occur in two stages. In the temperature range of ˜800-1000°C, crystallites nucleate and slowly grow. In the temperature range of 1125-1150°C spontaneous nucleation and rapid growth of crystallites occur. It is further noted that amorphized 6H (alpha) SiC recrystallizes to highly faulted fcc (beta) SiC.

  8. Hysteresis in the Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

    2011-01-01

    Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

  9. Manufacturing technology

    SciTech Connect

    Blaedel, K L

    1998-01-01

    The mission of the Manufacturing Technology thrust area at Lawrence Livermore National Laboratory (LLNL) has been to have an adequate base of manufacturing technology, not necessarily resident at LLNL, to conduct their future business. The specific goals were (1) to develop an understanding of fundamental fabrication processes; (2) to construct general purpose process models that have wide applicability; (3) to document their findings and models in journals; (4) to transfer technology to LLNL programs, industry, and colleagues; and (5) to develop continuing relationships with the industrial and academic communities to advance their collective understanding of fabrication processes. In support of this mission, two projects were reported here, each of which explores a way to bring higher precision to the manufacturing challenges that we face over the next few years. The first, ''A Spatial-Frequency-Domain Approach to Designing a Precision Machine Tools,'' is an overall view of how they design machine tools and instruments to make or measure workpieces that are specified in terms of the spatial frequency content of the residual errors of the workpiece surface. This represents an improvement of an ''error budget,'' a design tool that saw significant development in the early 1980's, and has been in active use since then. The second project, ''Micro-Drilling of ICF Capsules,'' is an attempt to define the current state in commercial industry for drilling small holes, particularly laser-drilling. The report concludes that 1-{micro}m diameter holes cannot currently be drilled to high aspect ratios, and then defines the engineering challenges that will have to be overcome to machine holes small enough for NIF capsules.

  10. Fabric Manufacturing

    NASA Technical Reports Server (NTRS)

    1986-01-01

    When rapid oscillation of blanket wearing looms at Chatham Manufacturing Company caused significant metal fatigue, the company turned to NC/STRC for a NASA data bank computer search. The search pinpointed tensile stress, and suggested a built-in residual compressive stress as a solution. "Shot peening," bombarding a part with a high velocity stream of very small shot to pound and compress the part's surface, was found to be the only practical method for creating compressive stress. The method has been successful and the company estimates its annual savings as a quarter million dollars.

  11. Manufacturing technology

    NASA Astrophysics Data System (ADS)

    Leonard, J. A.; Floyd, H. L.; Goetsch, B.; Doran, L.

    1993-08-01

    This bulletin depicts current research on manufacturing technology at Sandia laboratories. An automated, adaptive process removes grit overspray from jet engine turbine blades. Advanced electronic ceramics are chemically prepared from solution for use in high-voltage varistors. A selective laser sintering process automates wax casting pattern fabrication. Numerical modeling improves the performance of a photoresist stripper (a simulation on a Cray supercomputer reveals the path of a uniform plasma). Improved mathematical models will help make the dream of low-cost ceramic composites come true.

  12. Chemical reactivity of SiC fibre-reinforced SiC with beryllium and lithium ceramic breeder materials

    NASA Astrophysics Data System (ADS)

    Kleykamp, H.

    2000-12-01

    SiC fibre-reinforced SiC fabrics (f-SiC/SiC) are considered for structural materials of advanced fusion blanket concepts. Priority tasks are compatibility studies of SiC with Li breeder ceramics and the Be neutron multiplier. Isothermal and anisothermal powder reactions by DTA up to 1220°C were examined between Li 4SiO 4, Li 2ZrO 3 and Li 2TiO 3, respectively, and SiC and SiC/SiO 2 mixtures, respectively. The SiC/SiO 2 mixture simulated the chemical state of Nicalon fibres. Solid state reactions between SiC and Be pellets were studied by capsule experiments. The reaction products Be 2C and Si were observed between the initial phases after annealing at 800°C and 900°C. A parabolic time law with a chemical diffusion coefficient D˜=2.6×10 -15 m 2/s of Be in the products was deduced at 900°C. Additional oxygen released from SiO 2 as a component of the simulated fibres oxidised the reaction products via the gas phase by formation of a Be 2SiO 4 layer. All reactions are kinetically hindered below 700°C.

  13. Selective epitaxial growth of graphene on SiC

    NASA Astrophysics Data System (ADS)

    Camara, N.; Rius, G.; Huntzinger, J.-R.; Tiberj, A.; Mestres, N.; Godignon, P.; Camassel, J.

    2008-09-01

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ˜1582cm-1 in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  14. Selective epitaxial growth of graphene on SiC

    SciTech Connect

    Camara, N.; Rius, G.; Godignon, P.; Huntzinger, J.-R.; Tiberj, A.; Camassel, J.

    2008-09-22

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a ''prepatterned'' silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at {approx}1582 cm{sup -1} in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  15. SIC-POVMS and MUBS: Geometrical Relationships in Prime Dimension

    SciTech Connect

    Appleby, D. M.

    2009-03-10

    The paper concerns Weyl-Heisenberg covariant SIC-POVMs (symmetric informationally complete positive operator valued measures) and full sets of MUBs (mutually unbiased bases) in prime dimension. When represented as vectors in generalized Bloch space a SIC-POVM forms a d{sup 2}-1 dimensional regular simplex (d being the Hilbert space dimension). By contrast, the generalized Bloch vectors representing a full set of MUBs form d+1 mutually orthogonal d-1 dimensional regular simplices. In this paper we show that, in the Weyl-Heisenberg case, there are some simple geometrical relationships between the single SIC-POVM simplex and the d+1 MUB simplices. We go on to give geometrical interpretations of the minimum uncertainty states introduced by Wootters and Sussman, and by Appleby, Dang and Fuchs, and of the fiduciality condition given by Appleby, Dang and Fuchs.

  16. SiC IR emitter design for thermophotovoltaic generators

    NASA Astrophysics Data System (ADS)

    Fraas, Lewis M.; Ferguson, Luke; McCoy, Larry G.; Pernisz, Udo C.

    1996-02-01

    An improved ceramic spine disc burner/emitter for use in a thermophotovoltaic (TPV) generator is described. A columnar infrared (IR) emitter consisting of a stack of silicon carbide (SiC) spine discs provides for both high conductance for the combustion gases and efficient heat transfer from the hot combustion gases to the emitter. Herein, we describe the design, fabrication, and testing of this SiC burner as well as the characterization of the IR spectrum it emits. We note that when the SiC column is surrounded with fused silica heat shields, these heat shields suppress the emitted power beyond 4 microns. Thus, a TPV generator using GaSb photovoltaic cells covered by simple dielectric filters can convert over 30% of the emitted IR radiation to DC electric power.

  17. Advanced SiC composites for fusion applications

    SciTech Connect

    Snead, L.L.; Schwarz, O.J.

    1995-04-01

    This is a short review of the motivation for and progress in the development of ceramic matrix composites for fusion. Chemically vapor infiltrated silicon carbide (SiC) composites have been fabricated from continuous fibers of either SiC or graphite and tested for strength and thermal conductivity. Of significance is the the Hi-Nicalon{trademark} SiC based fiber composite has superior unirradiated properties as compared to the standard Nicalon grade. Based on previous results on the stability of the Hi-Nicalon fiber, this system should prove more resistant to neutron irradiation. A graphite fiber composite has been fabricated with very good mechnical properties and thermal conductivity an order of magnitude higher than typical SiC/SiC composites.

  18. Deposition of hydroxyapatite on SiC nanotubes in simulated body fluid.

    PubMed

    Taguchi, Tomitsugu; Miyazaki, Toshiki; Iikubo, Satoshi; Yamaguchi, Kenji

    2014-01-01

    SiC nanotubes can become candidate reinforcement materials for dental and orthopedic implants due to their light weight and excellent mechanical properties. However, the development of bioactive SiC materials has not been reported. In this study, hydroxyapatites were found on SiC nanotubes treated with NaOH and subsequently HCl solution after soaking in simulated body fluid. On the other hand, hydroxyapatites did not deposit on as-received SiC nanotubes, the SiC nanotubes with NH4OH solution treatment and SiC bulk materials with NaOH and subsequently HCl solution treatment. Therefore, we succeeded in the development of bioactive SiC nanotubes by downsizing SiC materials to nanometer size and treating with NaOH and subsequently HCl solutions for the first time.

  19. Direct observation of porous SiC formed by anodization in HF

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S.; Grimberg, Ilana; Weiss, Ben-Zion; Kurtz, Anthony D.

    1993-01-01

    A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. TEM reveals pores of sizes 10-30 nm with interpore spacings ranging from roughly 5 to 150 nm. This is the first reported direct observation of porous SiC formation.

  20. Development of CVD Mullite Coatings for SiC Fibers

    SciTech Connect

    Sarin, V.K.; Varadarajan, S.

    2000-03-15

    A process for depositing CVD mullite coatings on SiC fibers for enhanced oxidation and corrosion, and/or act as an interfacial protective barrier has been developed. Process optimization via systematic investigation of system parameters yielded uniform crystalline mullite coatings on SiC fibers. Structural characterization has allowed for tailoring of coating structure and therefore properties. High temperature oxidation/corrosion testing of the optimized coatings has shown that the coatings remain adherent and protective for extended periods. However, preliminary tests of coated fibers showed considerable degradation in tensile strength.

  1. Saturn V S-IC (First Stage) Structural Arrangement

    NASA Technical Reports Server (NTRS)

    1968-01-01

    This illustration, with callouts, shows the structural arrangement of the major components for the S-IC (first) stage of the Saturn V launch vehicle. The S-IC stage was 138 feet long and 33 feet in diameter, and produced more than 7,500,000 pounds of thrust through five F-1 engines that were powered by liquid oxygen and kerosene. Four of the engines were mounted on an outer ring and gimbal for control purposes. The fifth engine was rigidly mounted in the center. When ignited, the roar produced by the five engines equaled the sound of 8,000,000 hi-fi sets.

  2. Turbine Manufacture

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The machinery pictured is a set of Turbodyne steam turbines which power a sugar mill at Bell Glade, Florida. A NASA-developed computer program called NASTRAN aided development of these and other turbines manufactured by Turbodyne Corporation's Steam Turbine Division, Wellsville, New York. An acronym for NASA Structural Analysis Program, NASTRAN is a predictive tool which advises development teams how a structural design will perform under service use conditions. Turbodyne uses NASTRAN to analyze the dynamic behavior of steam turbine components, achieving substantial savings in development costs. One of the most widely used spinoffs, NASTRAN is made available to private industry through NASA's Computer Software Management Information Center (COSMIC) at the University of Georgia.

  3. The Commercialization of the SiC Flame Sensor

    NASA Astrophysics Data System (ADS)

    Fedison, Jeffrey B.

    2002-03-01

    The technical and scientific steps required to produce large quantities of SiC flame sensors is described. The technical challenges required to understand, fabricate, test and package SiC photodiodes in 1990 were numerous since SiC device know how was embryonic. A sense of urgency for a timely replacement of the Geiger Muller gas discharge tube soon entered the scene. New dual fuel GE Power Systems gas turbines, which were designed to lean burn either natural gas or oil for low NOx emissions required a much higher sensitivity sensor. Joint work between GE CRD and Cree Research sponsored by the GE Aircraft Engine Division developed the know how for the fabrication of high sensitivity, high yield, reliable SiC photodiodes. Yield issues were uncovered and overcome. The urgency for system insertion required that SiC diode and sensor circuitry development needed to be carried out simultaneously with power plant field tests of laboratory or prototype sensor assemblies. The sensor and reliability specifications were stringent since the sensors installed on power plant turbine combustor walls are subjected to high levels of vibration, elevated temperatures, and high pressures. Furthermore a fast recovery time was required to sense flame out in spite of the fact that the amplifier circuit needed have high gain and high dynamic range. SiC diode technical difficulties were encountered and overcome. The science of hydrocarbon flames will also be described together with the fortunate overlap of the strong OH emission band with the SiC photodiode sensitivity versus wavelength characteristic. The extremely low dark current (<1pA/cm^2) afforded by the wide band gap and the 3eV sensitivity cutoff at 400nm made if possible to produce low amplifier offsets, high sensitivity and high dynamic range along with immunity to black body radiation from combustor walls. Field tests at power plants that had experienced turbine tripping, whenever oil fuel and/or oil with steam injection for

  4. Gas Sensing Diode Comprising SiC

    NASA Technical Reports Server (NTRS)

    Hunter, Gary William (Inventor)

    2001-01-01

    A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 degrees C. The diode is both sensitive and stable at elevated temperatures.

  5. Saturn V Stage I (S-IC) Overview

    NASA Technical Reports Server (NTRS)

    Interbartolo, Michael

    2009-01-01

    Objectives include: a) Become familiar with the Saturn V Stage I (S-IC) major structural components: Forward Skirt, Oxidizer Tank, Intertank, Fuel Tank, and Thrust Structure. b) Gain a general understanding of the Stage I subsystems: Fuel, Oxidizer, Instrumentation, Flight Control, Environmental Control, Electrical, Control Pressure, and Ordinance.

  6. Passivation of SiC device surfaces by aluminum oxide

    NASA Astrophysics Data System (ADS)

    Hallén, A.; Usman, M.; Suvanam, S.; Henkel, C.; Martin, D.; Linnarsson, M. K.

    2014-03-01

    A steady improvement in material quality and process technology has made electronic silicon carbide devices commercially available. Both rectifying and switched devices can today be purchased from several vendors. This successful SiC development over the last 25 years can also be utilized for other types of devices, such as light emitting and photovoltaic devices, however, there are still critical problems related to material properties and reliability that need to be addressed. This contribution will focus on surface passivation of SiC devices. This issue is of utmost importance for further development of SiC MOSFETs, which so far has been limited by reliability and low charge carrier surface mobilities. Also bipolar devices, such as BJTs, LEDs, or PV devices will benefit from more efficient and reliable surface passivation techniques in order to maintain long charge carrier lifetimes. Silicon carbide material enables the devices to operate at higher electric fields, higher temperatures and in more radiation dense applications than silicon devices. To be able to utilize the full potential of the SiC material, it is therefore necessary to develop passivation layers that can sustain these more demanding operation conditions. In this presentation it will also be shown that passivation layers of Al2O3 deposited by atomic layer deposition have shown superior radiation hardness properties compared to traditional SiO2-based passivation layers.

  7. Low damage, highly anisotropic dry etching of SiC

    SciTech Connect

    Wang, J.J.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Ren, F.; Ostling, M.; Zetterling, C.M.; Grow, J.M.; Shul, R.J.

    1998-03-01

    A parametric study of the etching characteristics of 6H p{sup +} and n{sup +} SiC and thin film SiC{sub 0.5}N{sub 0.5} in Inductively Coupled Plasma NF{sub 3}/O{sub 2} and NF{sub 3}/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF{sub 3} percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of {approximately} 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF{sub 3}:O{sub 2} conditions.

  8. Stress Analysis of SiC MEMS Using Raman Spectroscopy

    NASA Astrophysics Data System (ADS)

    Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

    2003-03-01

    During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

  9. Observations of Ag diffusion in ion implanted SiC

    DOE PAGES

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

  10. Towards SiC Surface Functionalization: An Ab Initio Study

    SciTech Connect

    Cicero, G; Catellani, A

    2005-01-28

    We present a microscopic model of the interaction and adsorption mechanism of simple organic molecules on SiC surfaces as obtained from ab initio molecular dynamics simulations. Our results open the way to functionalization of silicon carbide, a leading candidate material for bio-compatible devices.

  11. First principle identification of SiC monolayer as an efficient catalyst for CO oxidation

    SciTech Connect

    Sinthika, S. E-mail: sinthika90@gmail.com; Thapa, Ranjit E-mail: sinthika90@gmail.com; Reddy, C. Prakash

    2015-06-24

    Using density functional theory, we investigated the electronic properties of SiC monolayer and tested its catalytic activity toward CO oxidation. The planar nature of a SiC monolayer is found to stable and is a high band gap semiconductor. CO interacts physically with SiC surface, whereas O{sub 2} is adsorbed with moderate binding. CO oxidation on SiC monolayer prefers the Eley Rideal mechanism over the Langmuir Hinshelwood mechanism, with an easily surmountable activation barrier during CO{sub 2} formation. Overall metal free SiC monolayer can be used as efficient catalyst for CO oxidation.

  12. Active coatings for SiC particles to reduce the degradation by liquid aluminium during processing of aluminium matrix composites: study of interfacial reactions.

    PubMed

    Ureña, A.; Rodrigo, P.; Baldonedo, J. L.; Gil, L.

    2001-02-01

    The application of a surface coating on SiC particles is studied as an alternative means of solving problems of reactivity between SiC reinforcements and molten aluminium and problems of low wetting which limit the application of casting routes for fabrication of Al-SiCp composites. The selected active barrier was a ceramic composed of SiO2, which was generated by controlled oxidation of the SiC particles. The coating behaves as an active barrier, preventing a direct reaction between molten aluminium and SiC to form Al4C3 as the main degradation product. At the same time, the SiO2 provokes other interfacial reactions, which are responsible for an improvement in wetting behaviour. Composites were prepared by mixing and compacting SiC particles with Al powders followed by melting in a vacuum furnace, and varying the residence time. Transmission electron microscopy (TEM), high resolution electron microscopy (HREM) and field emission TEM were employed as the main characterization techniques to study the interfacial reactions occurring between the barrier and the molten aluminium. These studies showed that the SiO2 coating behaves as an active barrier which reacts with the molten Al to form a glassy phase Al-Si-O. This compound underwent partial crystallization during the composite manufacture to form mullite. The formation of an outer crystalline layer, composed mainly of Al2O3, was also detected. Participation of other secondary interface reactions inside the active barrier was also identified by HREM techniques.

  13. PhySIC: a veto supertree method with desirable properties.

    PubMed

    Ranwez, Vincent; Berry, Vincent; Criscuolo, Alexis; Fabre, Pierre-Henri; Guillemot, Sylvain; Scornavacca, Celine; Douzery, Emmanuel J P

    2007-10-01

    This paper focuses on veto supertree methods; i.e., methods that aim at producing a conservative synthesis of the relationships agreed upon by all source trees. We propose desirable properties that a supertree should satisfy in this framework, namely the non-contradiction property (PC) and the induction property (PI). The former requires that the supertree does not contain relationships that contradict one or a combination of the source topologies, whereas the latter requires that all topological information contained in the supertree is present in a source tree or collectively induced by several source trees. We provide simple examples to illustrate their relevance and that allow a comparison with previously advocated properties. We show that these properties can be checked in polynomial time for any given rooted supertree. Moreover, we introduce the PhySIC method (PHYlogenetic Signal with Induction and non-Contradiction). For k input trees spanning a set of n taxa, this method produces a supertree that satisfies the above-mentioned properties in O(kn(3) + n(4)) computing time. The polytomies of the produced supertree are also tagged by labels indicating areas of conflict as well as those with insufficient overlap. As a whole, PhySIC enables the user to quickly summarize consensual information of a set of trees and localize groups of taxa for which the data require consolidation. Lastly, we illustrate the behaviour of PhySIC on primate data sets of various sizes, and propose a supertree covering 95% of all primate extant genera. The PhySIC algorithm is available at http://atgc.lirmm.fr/cgi-bin/PhySIC.

  14. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of November 20, 1963.

  15. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph, taken May 7, 1963, gives a close look at the four concrete tower legs of the S-IC test stand at their completed height.

  16. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of October 22, 1963. Spherical liquid hydrogen tanks can be seen to the left. Just to the lower front of those are the cylindrical liquid oxygen (LOX) tanks.

  17. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph taken February 25, 1963, gives a close up look at two of the ever-growing four towers of the S-IC Test Stand.

  18. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of October 10, 1963. Kerosene storage tanks can be seen to the left.

  19. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph taken March 29, 1963, gives a close up look at two of the ever-growing four towers of the S-IC Test Stand.

  20. Construction Progress of the S-IC Test Stand Towers

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph, taken April 4, 1963, gives a close up look at the ever-growing four towers of the S-IC Test Stand.

  1. Construction Progress of S-IC Test Stand Towers

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph taken April 17, 1963, gives a look at the four tower legs of the S-IC test stand at their completed height.

  2. Construction Progress of the S-IC Test Stand Tower

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph, taken from ground level on May 7, 1963, gives a close look at one of the four towers legs of the S-IC test stand nearing its completed height.

  3. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of October 10, 1963. Spherical liquid hydrogen tanks can be seen to the left.

  4. On the existence of Si-C double bonded graphene-like layers

    NASA Astrophysics Data System (ADS)

    Huda, Muhammad N.; Yan, Yanfa; Al-Jassim, Mowafak M.

    2009-09-01

    Upon analyzing an earlier experimental study by density-functional theory we have shown that graphene-like SiC layers can exist. We found that, for a particular stacking sequence, Si dbnd C double bond was responsible for the much larger interlayer distances observed in synthesized multi-walled SiC nanotubes. The Si/C ratios in SiC layers determine the extent of interlayer distances and bonding nature. It has been also shown that for some intermediate ratios of Si:C and/or with other stacking sequences, a collapse of SiC layers to tetrahedrally bonded system is possible. We have argued that these synthesized Si dbnd C double-bonded multi-wall silicon-carbide nanotubes may provide a pathway for future realization of SiC graphene-like materials.

  5. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    NASA Astrophysics Data System (ADS)

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-05-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  6. LOW ACTIVATION JOINING OF SIC/SIC COMPOSITES FOR FUSION APPLICATIONS: MODELING DUAL-PHASE MICROSTRUCTURES AND DISSIMILAR MATERIAL JOINTS

    SciTech Connect

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Ferraris, M.; Katoh, Y.

    2016-03-31

    Finite element continuum damage models (FE-CDM) have been developed to simulate and model dual-phase joints and cracked joints for improved analysis of SiC materials in nuclear environments. This report extends the analysis from the last reporting cycle by including results from dual-phase models and from cracked joint models.

  7. The 3.2m all SiC Telescope for SPICA

    NASA Astrophysics Data System (ADS)

    Castel, Didier; Sein, Emmanuel; Lopez, Sebastien; Nakagawa, Takao; Bougoin, Michel

    2012-09-01

    Placed on the Sun-Earth L2 Lagrange point, SPICA will operate in the 5 to 210 μm wavelength range. Astrium has been contracted by ESA/ JAXA to update the study of the SPICA telescope from a 3.5 m design (compatible to the Japanese HIIB launcher) to a 3.2 m design (compatible to the HII-A with the short 5S fairing): despite a similar fairing diameter, the shorter length of the fairing envelope results in a reduction of the M1-M2 distance and an associated diameter reduction of M1. Maximization of the M1-M2 distance within the constraints is important to maintain a reasonable polishing criteria of the main reflector. Therefore the M2 assembly sizing and the back focal length become main parameters for the telescope optical design. The main constraints are driven by the telescope requirements such as focal length, maximizing the diameter of M1 (3.2 m) and, M1 f-number (critical for the manufacturing aspects). The WFE must be below 350 nm rms, and operational temperature below 6K. . The main issues addressed in this paper are: - an improved telescope design based on the Astrium background in Silicon Carbide technology which has been tried-an-tested for mirrors and structural parts on several space projects, including HERSCHEL and Gaia (brazing, polishing, assembling, iso-static mountings). - performances which are taking advantage of the SiC properties ,such as homogeneity of the single-phase material inside the structure, and structural stability from ambient to the operational temperature range. Our study shows that the SiC telescope design can fulfil all the mechanical and optical requirements for SPICA. - the verification and optical tests definition which will be key elements in the qualification of the telescope to be incorporated in the logic of the satellite verification activity to be conducted in Japan.

  8. Advanced Manufacturing Technologies

    NASA Technical Reports Server (NTRS)

    Fikes, John

    2016-01-01

    Advanced Manufacturing Technologies (AMT) is developing and maturing innovative and advanced manufacturing technologies that will enable more capable and lower-cost spacecraft, launch vehicles and infrastructure to enable exploration missions. The technologies will utilize cutting edge materials and emerging capabilities including metallic processes, additive manufacturing, composites, and digital manufacturing. The AMT project supports the National Manufacturing Initiative involving collaboration with other government agencies.

  9. Technological state of the art of SiC

    NASA Astrophysics Data System (ADS)

    Tyc, Stdphane

    1993-10-01

    In a recent paper [1], Locatelli and Gamal describe the technological state of the art of SiC compared with Si. I would like to bear witness to the rapid advancement of SiC technology by giving a slighty updated account of SiC technology. The boule growth of SiC now achieves diameters up to 60 mm. One of the most problematic standing issues is the presence of micropipes in the wafers with a density of the order of 100 cm^{-2} or more [2]. The doping range available in epilayers is now wider. CAFE Research [3] accepts orders for doping densities from 5 × 10^{15} cm^{-3} to 1 × 10^{19} cm^{-3} in both N and P type. However their state of the art is better (we have received P type with doping 4 × 10^{14} cm^{-3} and N type with doping over 2 × 10^{19} cm^{-3} and they have also delivered [4] N type doping of 5 × 10^{14} cm^{-3}). As for large P dopings, Dmitriev has published [5] dopings over 10^{20} cm^{-3} The specific resistance of contacts on N type layers has also rapidly improved. Kelner has published results of 3 × 10^{-6} Ohm.cm2 with Ni contacts [6]. We have obtained with molybdenum [7] specific resistances of 2 × 10^{-5} Ohm.cm2 on epitaxies doped to 5 × 10^{18} cm^{-3} This value should be rapidly lowered as higher doped layers are used. In sum, I do agree with the authors of [1] that the technology of 6H SiC is rapidly advancing, thanks to breakthroughs in material growth and to a wide ranging renewed interest in this material. The pace may actually be higher than hitherto realized. References: [1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101. [2] Barret D. L. et al., Tenth Int. Conf. on Crystal Growth, San Diego, CA, USA 16-21 (August 1992). [3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA. [4] Parrish M., private communication. [5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc. Meeting, 4, 89-2 (1989) 711. [6] Workshop on SiC Material and Devices (Charlottesville, September 10-11 1992) VA 22901. [7] Tyc

  10. Pd/CeO2/SiC Chemical Sensors

    NASA Technical Reports Server (NTRS)

    Lu, Weijie; Collins, W. Eugene

    2005-01-01

    The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd

  11. Desktop Manufacturing Technologies.

    ERIC Educational Resources Information Center

    Snyder, Mark

    1991-01-01

    Desktop manufacturing is the use of data from a computer-assisted design system to construct actual models of an object. Emerging processes are stereolithography, laser sintering, ballistic particle manufacturing, laminated object manufacturing, and photochemical machining. (SK)

  12. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  13. Astrocyte-Dependent Slow Inward Currents (SICs) Participate in Neuromodulatory Mechanisms in the Pedunculopontine Nucleus (PPN)

    PubMed Central

    Kovács, Adrienn; Pál, Balázs

    2017-01-01

    Slow inward currents (SICs) are known as excitatory events of neurons caused by astrocytic glutamate release and consequential activation of neuronal extrasynaptic NMDA receptors. In the present article we investigate the role of these astrocyte-dependent excitatory events on a cholinergic nucleus of the reticular activating system (RAS), the pedunculopontine nucleus (PPN). It is well known about this and other elements of the RAS, that they do not only give rise to neuromodulatory innervation of several areas, but also targets neuromodulatory actions from other members of the RAS or factors providing the homeostatic drive for sleep. Using slice electrophysiology, optogenetics and morphological reconstruction, we revealed that SICs are present in a population of PPN neurons. The frequency of SICs recorded on PPN neurons was higher when the soma of the given neuron was close to an astrocytic soma. SICs do not appear simultaneously on neighboring neurons, thus it is unlikely that they synchronize neuronal activity in this structure. Occurrence of SICs is regulated by cannabinoid, muscarinic and serotonergic neuromodulatory mechanisms. In most cases, SICs occurred independently from tonic neuronal currents. SICs were affected by different neuromodulatory agents in a rather uniform way: if control SIC activity was low, the applied drugs increased it, but if SIC activity was increased in control, the same drugs lowered it. SICs of PPN neurons possibly represent a mechanism which elicits network-independent spikes on certain PPN neurons; forming an alternative, astrocyte-dependent pathway of neuromodulatory mechanisms. PMID:28203147

  14. Operating procedure for SiC defect detection: Data support document

    SciTech Connect

    Adams, C.C.; Partain, K.E.

    1989-09-29

    The feasibility of the Hg Intrusion QC method for measuring SiC coating defects for the MHTGR was conducted as a potential improvement for the Burn/Leach (B/L) QC method currently used. The purpose for evaluating the Hg Intrusion QC method as an alternative method was to determine if B/L QC method underestimated SiC coating defects. Some evidence in work conducted earlier, indicated that TRISO-coated fuel particles with low SiC coating defects measured by the B/L QC method showed higher releases of metallic fission products. These data indicated that the SiC coating defect fractions were higher than the B/L measured data indicated. Sample sizes used in the current study were too small to conclusively demonstrate that the B/L QC method under estimate SiC coating defects. However, observations made during this study indicated a need for an additional QC method to the B/L QC method to measure SiC coating defects for the higher quality MHTGR fuels. The B/L QC method is the best method for measuring SiC coating defects with missing SiC layers or broken SiC coatings (gross SiC defects). However, SiC coating defects with microcracks and other SiC defects not detected by the B/L method may contribute to the release of metallic fission products in-service. For these type of SiC coating defects, the Hg Intrusion QC method investigated in this study is feasible, but particle sample size should be increased to a much larger sample size (100,000 particles per test) for the MHTGR. 7 refs., 5 figs., 9 tabs.

  15. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  16. Laser synthesis of carbon-rich SiC nanoribbons

    NASA Astrophysics Data System (ADS)

    Salama, I. A.; Quick, N. R.; Kar, A.

    2003-06-01

    A nanosecond pulsed laser direct-write and doping (LDWD) technique is used for the fabrication of carbon-rich silicon carbide nanoribbons heterostructure in a single crystal 4H-SiC wafer. Characterization by high-resolution transmission electron microscope and selected area electron diffraction pattern revealed the presence of nanosize crystalline ribbons with hexagonal graphite structure in the heat-affected zone below the decomposition temperature isotherm in the SiC epilayer. The nanoribbons exist in three layers each being approximately 50-60 nm thick, containing 15-17 individual sheets. The layers are self-aligned on the (0001) plane of the SiC epilayer with their c axis at 87° to the incident laser beam. The LDWD technique permits synthesis of heterostructured nanoribbons in a single step without additional material or catalyst, and effectively eliminates the need for nanostructure handling and transferring processes.

  17. STM characterization of a graphitized SiC(0001)surface

    NASA Astrophysics Data System (ADS)

    Brar, Victor; Zhang, Yuanbo; Yayon, Yossi; Ohta, Taisuke; McChesney, Jessica; Rotenberg, Eli; Crommie, Mike

    2007-03-01

    The two-dimensional electron gas in a single graphene sheet exhibits unique properties due the cone-shaped electron band structure near the Fermi energy. Recently the growth of a single layer of graphene on SiC(0001) has been demonstrated, opening new possibilities for fabricating large scale graphene-based devices. We have performed scanning tunneling microscopy and spectroscopy of single and bi-layer graphene films on SiC(0001). Atomically resolved topographs and dI/dV maps show clear differences between the single and bi-layer surfaces at different length scales. We have characterized the energy dependence and spatial distribution of the electron local density of states in these single and bi-layer films.

  18. Research on microwave joining of SiC

    SciTech Connect

    1995-12-31

    The objectives of this research project are to identify optimum time-temperature profiles for the microwave joining of silicon carbide and to develop new microwave joining methods that can be applied to accomplish in situ formation of silicon carbide interlayers and to join larger samples required for industrial applications. Work during this reporting period was focused on investigation of the effect of specimen preparation on joining of SiC using polymer precursors to form SiC in situ at the interface. During this period, LANL also completed the evaluation of joints that were made by FMT using four different joining temperatures, as part of an effort to determine optimum joining temperature.

  19. Surface engineering of SiC via sublimation etching

    NASA Astrophysics Data System (ADS)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  20. Molten salt corrosion of SiC: Pitting mechanism

    NASA Technical Reports Server (NTRS)

    Jacobson, N. S.; Smialek, J. L.

    1985-01-01

    Thin films of Na2SO4 and Na2CO3 at 1000 C lead to severe pitting of sintered alpha-SiC. These pits are important as they cause a strength reduction in this material. The growth of product layers is related to pit formation for the Na2CO3 case. The early reaction stages involve repeated oxidation and dissolution to form sodium silicate. This results in severe grain boundary attack. After this a porous silica layer forms between the sodium silicate melt and the SiC. The pores in this layer appear to act as paths for the melt to reach the SiC and create larger pits.

  1. Nucleation and growth of polycrystalline SiC

    NASA Astrophysics Data System (ADS)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.; Linnarsson, M. K.; Ou, H.; Syväjärvi, M.; Wellmann, P.

    2014-03-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.

  2. The SiC Direct Target Prototype for SPES

    SciTech Connect

    Rizzi, Valentina; Andrighetto, Alberto; Antonucci, C.; Barbui, Marina; Biasetto, Lisa; Carturan, S.; Celona, L.; Cevolani, S.; Chines, Francesco; Cinausero, Marco; Colombo, P.; Cuttone, G.; Di Bernardo, P.; Giacchini, Mauro; Gramegna, Fabiana; Lollo, M.; Maggioni, G.; Manzolaro, Mattia; Meneghetti, G.; Messina, G. Esteban; Petrovich, C.; Piga, L.; Prete, Gianfranco; Re, Maurizio; Rizzo, D.; Stracener, Daniel W; Tonezzer, Michele; Zanonato, P.

    2007-01-01

    A R&D study for the realization of a Direct Target is in progress within the SPES project for RIBs production at the Laboratori Nazionali of Legnaro. A proton beam (40 MeV energy, 0.2 niA current) is supposed to impinge directly on a UCx multiple thin disks target, the power released by the proton beam is dissipated mainly through irradiation. A SiC target prototype with a 1:5 scale has been developed and tested. Thermal, mechanical and release calculations have been performed to fully characterize the prototype. An online test has been performed at the HRIBF facility of the Oak Ridge National Laboratory (ORNL), showing that our Sic target can sustain a proton beam current considerably higher than the maximum beam current used with the standard HRIBF target configuration.

  3. The SiC Direct Target Prototype for SPES

    SciTech Connect

    Rizzi, V.; Andrighetto, A.; Barbui, M.; Carturan, S.; Cinausero, M.; Giacchini, M.; Gramegna, F.; Lollo, M.; Maggioni, G.; Prete, G.; Tonezzer, M.; Antonucci, C.; Cevolani, S.; Petrovich, C.; Biasetto, L.; Colombo, P.; Manzolaro, M.; Meneghetti, M.; Celona, L.; Chines, F.

    2007-10-26

    A R and D study for the realization of a Direct Target is in progress within the SPES project for RIBs production at the Laboratori Nazionali of Legnaro. A proton beam (40 MeV energy, 0.2 mA current) is supposed to impinge directly on a UCx multiple thin disks target, the power released by the proton beam is dissipated mainly through irradiation. A SiC target prototype with a 1:5 scale has been developed and tested. Thermal, mechanical and release calculations have been performed to fully characterize the prototype. An online test has been performed at the HRIBF facility of the Oak Ridge National Laboratory (ORNL), showing that our SiC target can sustain a proton beam current considerably higher than the maximum beam current used with the standard HRIBF target configuration.

  4. EBSD investigation of SiC for HTR fuel particles

    NASA Astrophysics Data System (ADS)

    Helary, D.; Dugne, O.; Bourrat, X.; Jouneau, P. H.; Cellier, F.

    2006-05-01

    Electron back-scattering diffraction (EBSD) can be successfully performed on SiC coatings for HTR fuel particles. EBSD grain maps obtained from thick and thin unirradiated samples are presented, along with pole figures showing textures and a chart showing the distribution of grain aspect ratios. This information is of great interest, and contributes to improving the process parameters and ensuring the reproducibility of coatings.

  5. SiC device development for high temperature sensor applications

    NASA Technical Reports Server (NTRS)

    Shor, J. S.; Goldstein, David; Kurtz, A. D.; Osgood, R. M.

    1992-01-01

    Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

  6. Bilateral comparison of an IPRT between KRISS and SIC

    NASA Astrophysics Data System (ADS)

    Yang, I.; Sánchez, C. A.

    2013-09-01

    As a follow-up of a memorandum of understanding signed in 2009 between KRISS of Korea and SIC of Colombia, the two national metrology institutes carried out a bilateral comparison of calibration of an industrial platinum resistance thermometer (IPRT). A protocol that was similar to that of APMP.T-S6 has been agreed and followed in the comparison. The method of the calibration at each laboratory was calibration by comparison against calibrated reference thermometers. The nominal temperatures of the comparison were nine temperatures, including the ice point, between -50 °C and 500 °C. One commercially-available IPRT with α ˜ 0.00385 °C-1 that was prepared by KRISS was calibrated by comparison firstly at KRISS, and then at SIC, and finally at KRISS to assess the drift of the artifact during the comparison. At KRISS, an ice-point bath, three liquid baths and a salt bath were used to provide isothermal environment for the comparison. At SIC, an ice-point bath, two liquid baths and a vertical furnace with a metal equalizing block were used. The claimed uncertainty with k=2 of the calibration at KRISS, excluding the longterm instability and hysteresis of the traveling IPRT, was 30 mK, and that at SIC was 120 mK. The capability of the calibration of the two laboratories from -50 °C to 500 °C showed a good agreement within the claimed uncertainty of the calibration. The largest deviation of the two calibration results was 75 mK at 500 °C.

  7. Role of the Cdk Inhibitor Sic 1 in Start

    DTIC Science & Technology

    1998-08-01

    Cold Spring Harbor Laboratory Cold Spring Harbor , New York 11724 REPORT DATE: August 1998 TYPE OF REPORT: Annual PREPARED FOR...AND ADDRESS(ES) Cold Spring Harbor Laboratory Cold Spring Harbor , New York 11724 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING f...Meeting at Cold Spring Harbor Laboratory. Futcher, B., Yang, Q.-H., Sherlock, G., Marshak, D. and Schneider, B. SIC1 and other

  8. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, taken September 5, 1961, shows pumps used for extracting water emerging form a disturbed natural spring that occurred during the excavation of the site. The pumping became a daily ritual and the site is still pumped today.

  9. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In this photo, taken June 24, 1963, the four tower legs of the test stand can be seen at their maximum height.

  10. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, depicts the progress of the stand as of January 14, 1963, with its four towers prominently rising.

  11. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This construction photo depicts the progress of the stand site as of October 8, 1962.

  12. SiC X-ray detectors for harsh environments

    NASA Astrophysics Data System (ADS)

    Lees, J. E.; Barnett, A. M.; Bassford, D. J.; Stevens, R. C.; Horsfall, A. B.

    2011-01-01

    We have characterised a number of SiC Schottky Diodes as soft X-ray photon counting detectors over the temperature range -30°C to +80°C. We present the spectroscopic performance, as measured over the energy range ~ 6 keV-30 keV and correlate the data with measurements of the temperature dependence of the device leakage current. The results show that these detectors can be used for X-ray photon counting spectroscopy over a wide temperature range. Measurement of the radiation tolerance of Semi Transparent SiC Schottky Diodes (STSSD) has shown that these devices can still operate as photon counting X-ray spectrometers after proton irradiation (total dose of 1013 cm-2, 50 MeV). We present measurements on proton irradiated STSSDs that indicate that radiation induced traps, located in the upper half of the bandgap, have reduced the mobility and concentration of charge carriers. X-ray spectra predicted using a Monte Carlo model for SiC diodes are compared with measured spectra.

  13. Microstructure comparison of transparent and opaque CVD SiC

    SciTech Connect

    Kim, Y.; Zangvil, A.; Goela, J.S.; Taylor, R.L.

    1995-06-01

    Transparent, translucent, and opaque regions of high-purity bulk SiC, produced by CVD, have been characterized for physical properties as well as microstructure and chemical purity to correlate degree of transparency with other material characteristics. A good correlation was obtained between SiC vis-a-vis IR transmission and its microstructure. The transparent material is highly oriented toward the {l_angle}111{r_angle} direction and is characterized by pure, essentially defect-free, cubic {beta}-SiC columnar grains of size 5--10 {micro}m. The translucent material of various colors is mostly cubic in structure but contains large amounts of twins, usually as complex mixtures of several twinning variants and secondary twinning within a single grain. Opaque CVD SiC is randomly oriented, does not exhibit columnar grains, and contains one directional disorder with hexagonal ({alpha}-SiC) symmetry in a majority of grains and high density of dislocations elsewhere.

  14. The influence of SiC particle size and volume fraction on the thermal conductivity of spark plasma sintered UO2-SiC composites

    NASA Astrophysics Data System (ADS)

    Yeo, Sunghwan; Baney, Ronald; Subhash, Ghatu; Tulenko, James

    2013-11-01

    This study examines the influence of Silicon Carbide (SiC) particle addition on thermal conductivity of UO2-SiC composite pellets. UO2 powder and β-SiC particles of different sizes and of different volume fractions were mechanically mixed and sintered at 1350-1450 °C for 5 min by Spark Plasma Sintering (SPS). The particle size (0.6-55 μm diameter) and volume fraction (5-20%) of SiC were systematically varied to investigate their influence on the resulting UO2-SiC composite pellet microstructure and the thermal properties. It was found that SiC particle size less than 16.9 μm with larger volume fraction is more effective for improving the thermal conductivity of the fuel pellets. Scanning Electron Microscopy examination revealed micro-cracking and interfacial debonding in the composites containing larger size SiC particles (16.9 and 55 μm) which resulted in reduced thermal conductivity. For the UO2-SiC composite pellets containing 1 μm diameter SiC particles, the thermal conductivity increased almost linearly with volume fraction of particles. However, the addition of a larger volume fraction of SiC reduces the amount of heavy metal in the composite pellet and therefore a higher U-235 enrichment is necessary to compensate for the heavy metal loss. The experimental thermal conductivity values of the UO2-SiC composite pellets are in good agreement with the theoretical values based on the available model in the literature.

  15. Synchronistic preparation of fibre-like SiC and cubic-ZrO{sub 2}/SiC composite from zircon via carbothermal reduction process

    SciTech Connect

    Xu, Youguo; Liu, Yangai; Huang, Zhaohui; Fang, Minghao; Hu, Xiaozhi; Yin, Li; Huang, Juntong

    2013-01-15

    Graphical abstract: Display Omitted Highlights: ► Zircon carbothermal reduction was carried out in a tailor-made device at high-temperature air atmosphere. ► Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were obtained synchronically. ► Zirconium and silicon in zircon ore was initial separated. ► [SiO{sub 4}] was mutated to fibre-like SiC, while [ZrO{sub 8}] was transformed to cubic ZrO{sub 2}. ► The SiC were surprisingly enriched in the reducing atmosphere charred coal particles layers by gas–solid reaction. -- Abstract: Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were prepared respectively from zircon with yttrium oxide addition via carbothermal reduction process at 1600 °C for 4 h in an air atmosphere furnace, where the green samples were immerged in charred coal particles inside a high-temperature enclosed corundum crucible. The reaction products were characterized by XRD, XRF, XPS and SEM. The results indicate that ZrO{sub 2} in the products was mainly existed in the form of cubic phase. The reacted samples mainly contain cubic ZrO{sub 2}, β-SiC and trace amounts of zircon, with the SiC accounting for 14.8 wt%. Furthermore, a large quantity of fibre-like SiC was surprisingly found to concentrate in the charred coal particles layers around the samples. This study obtains fibre-like SiC and cubic-ZrO{sub 2}/SiC composite synchronically from zircon via carbothermal reduction process, which also bring a value-added high-performance application for natural zircon.

  16. Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations

    NASA Astrophysics Data System (ADS)

    Yoshimura, Satoru; Sugimoto, Satoshi; Murai, Kensuke; Kiuchi, Masato

    2016-12-01

    We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD) for silicon carbide (SiC) film formations. We mass-selected SiC2H6+ and SiC3H9+ ions from fragments produced from HMD, and finally produced low-energy SiC2H6+ and SiC3H9+ ion beams. The ion energy was approximately 100 eV. Then, the ion beams were irradiated to Si(100) substrates. The temperature of the Si substrate was 800°C during the ion irradiation. The X-ray diffraction and Raman spectroscopy of the substrates obtained following SiC2H6+ ion irradiation demonstrated the occurrence of 3C-SiC deposition. On the other hand, the film deposited by the irradiation of SiC3H9+ ions included diamond-like carbon in addition to 3C-SiC.

  17. Energy resource management for energy-intensive manufacturing industries

    SciTech Connect

    Brenner, C.W.; Levangie, J.

    1981-10-01

    A program to introduce energy resource management into an energy-intensive manufacturing industry is presented. The food industry (SIC No. 20) was chosen and 20 companies were selected for interviews, but thirteen were actually visited. The methodology for this program is detailed. Reasons for choosing the food industry are described. The substance of the information gained and the principal conclusions drawn from the interviews are given. Results of the model Energy Resource Management Plan applied to three companies are compiled at length. Strategies for dissemination of the information gained are described. (MCW)

  18. Current and future industrial energy service characterizations. Volume III. Energy data on 15 selected states' manufacturing subsector

    SciTech Connect

    Krawiec, F.; Thomas, T.; Jackson, F.; Limaye, D.R.; Isser, S.; Karnofsky, K.; Davis, T.D.

    1980-11-01

    An examination is made of the current and future energy demands, and uses, and cost to characterize typical applications and resulting services in the US and industrial sectors of 15 selected states. Volume III presents tables containing data on selected states' manufacturing subsector energy consumption, functional uses, and cost in 1974 and 1976. Alabama, California, Illinois, Indiana, Louisiana, Michigan, Missouri, New Jersey, New York, Ohio, Oregon, Pennsylvania, Texas, West Virginia, and Wisconsin were chosen as having the greatest potential for replacing conventional fuel with solar energy. Basic data on the quantities, cost, and types of fuel and electric energy purchased by industr for heat and power were obtained from the 1974 and 1976 Annual Survey of Manufacturers. The specific indutrial energy servic cracteristics developed for each selected state include. 1974 and 1976 manufacturing subsector fuels and electricity consumption by 2-, 3-, and 4-digit SIC and primary fuel (quantity and relative share); 1974 and 1976 manufacturing subsector fuel consumption by 2-, 3-, and 4-digit SIC and primary fuel (quantity and relative share); 1974 and 1976 manufacturing subsector average cost of purchsed fuels and electricity per million Btu by 2-, 3-, and 4-digit SIC and primary fuel (in 1976 dollars); 1974 and 1976 manufacturing subsector fuels and electric energy intensity by 2-, 3-, and 4-digit SIC and primary fuel (in 1976 dollars); manufacturing subsector average annual growth rates of (1) fuels and electricity consumption, (2) fuels and electric energy intensity, and (3) average cost of purchased fuels and electricity (1974 to 1976). Data are compiled on purchased fuels, distillate fuel oil, residual ful oil, coal, coal, and breeze, and natural gas. (MCW)

  19. Fractographic Analysis of HfB2-SiC and ZrB2-SiC Composites

    NASA Technical Reports Server (NTRS)

    Mecholsky, J.J., Jr.; Ellerby, D. T.; Johnson, S. M.; Stackpoole, M. M.; Loehman, R. E.; Arnold, Jim (Technical Monitor)

    2001-01-01

    Hafnium diboride-silicon carbide and zirconium diboride-silicon carbide composites are potential materials for high temperature leading edge applications on reusable launch vehicles. In order to establish material constants necessary for evaluation of in-situ fracture, bars fractured in four point flexure were examined using fractographic principles. The fracture toughness was determined from measurements of the critical crack sizes and the strength values, and the crack branching constants were established to use in forensic fractography of materials for future flight applications. The fracture toughnesses range from about 13 MPam (sup 1/2) at room temperature to about 6 MPam (sup 1/2) at 1400 C for ZrB2-SiC composites and from about 11 MPam (sup 1/2) at room temperature to about 4 MPam (sup 1/2) at 1400 C for HfB2-SiC composites.

  20. Effect of oxygen on ion-beam induced synthesis of SiC in silicon

    NASA Astrophysics Data System (ADS)

    Artamonov, V. V.; Valakh, M. Ya.; Klyui, N. I.; Melnik, V. P.; Romanyuk, A. B.; Romanyuk, B. N.; Yuhimchuk, V. A.

    1999-01-01

    The properties of Si-structures with a buried silicon carbide (SiC) layer created by high-dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. The effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz-Si or in Si (Cz-or Fz-) subjected to additional oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segregation and amorphous carbon film formation on SiC grain boundaries were revealed.

  1. AlGaN HEMTs on patterned resistive/conductive SiC templates

    NASA Astrophysics Data System (ADS)

    Prystawko, Pawel; Sarzynski, Marcin; Nowakowska-Siwinska, Anna; Crippa, Danilo; Kruszewski, Piotr; Wojtasiak, Wojciech; Leszczynski, Mike

    2017-04-01

    High performance GaN-based high electron mobility transistors (HEMTs) on SiC require low-miscut ( 0.45°), resistive substrates, which are very expensive. A cost-effective solution is to use resistive SiC template i.e., grow a thick resistive SiC epitaxial layer on cheap, conductive SiC substrate. However, this approach requires much higher miscut (2-8°). In the present work we show a lateral patterning technology capable to locally decrease the high miscut of the resistive SiC template, down to a level acceptable for GaN epitaxy. On such patterned SiC templates we grew smooth AlGaN/GaN structures. The maximum width of flat regions available for device fabrication was nearly 100 μm. In these flat regions AlGaN-based HEMTs were fabricated and characterized.

  2. SiC Optically Modulated Field-Effect Transistor

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  3. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built to the northeast of the stand was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. In this photo of the S-IC test stand, taken October 2, 1963, the flame deflector can be seen in the bottom center portion

  4. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built to the northeast of the stand was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. In this photo of the S-IC test stand, taken September 25, 1963, the flame deflector can be seen rotated to the outside on

  5. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In the early stages of excavation, a natural spring was disturbed that caused a water problem which required constant pumping from the site and is even pumped to this day. Behind this reservoir of pumped water is the S-IC test stand boasting its ever-growing four towers as of March 29, 1963.

  6. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built northeast of the stand was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. In this photo, taken September 5, 1963, the flame deflector is being installed in the S-IC test stand.

  7. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

    NASA Technical Reports Server (NTRS)

    Steckl, A. J.; Roth, M. D.; Powell, J. A.; Larkin, D. J.

    1993-01-01

    The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

  8. SiC (SCS-6) Fiber Reinforced-Reaction Formed SiC Matrix Composites: Microstructure and Interfacial Properties

    NASA Technical Reports Server (NTRS)

    Singh, M.; Dickerson, R. M.; Olmstead, Forrest A.; Eldridge, J. I.

    1997-01-01

    Microstructural and interfacial characterization of unidirectional SiC (SCS-6) fiber reinforced-reaction formed SiC (RFSC) composites has been carried out. Silicon-1.7 at.% molybdenum alloy was used as the melt infiltrant, instead of pure silicon, to reduce the activity of silicon in the melt as well as to reduce the amount of free silicon in the matrix. Electron microprobe analysis was used to evaluate the microstructure and phase distribution in these composites. The matrix is SiC with a bi-modal grain-size distribution and small amounts of MoSi2, silicon, and carbon. Fiber push-outs tests on these composites showed that a desirably low interfacial shear strength was achieved. The average debond shear stress at room temperature varied with specimen thickness from 29 to 64 MPa, with higher values observed for thinner specimens. Initial frictional sliding stresses showed little thickness dependence with values generally close to 30 MPa. Push-out test results showed very little change when the test temperature was increased to 800 C from room temperature, indicating an absence of significant residual stresses in the composite.

  9. Structural Consequences of Hydrogen Intercalation of Epitaxial Graphene on SiC(0001)

    DTIC Science & Technology

    2014-10-23

    Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001) Jonathan D. Emery,1,a) Virginia H. Wheeler,2 James E. Johns,1...the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene ...from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene

  10. Preparation of SiC doped In-Situ MgB2 mono- and 7-filamentary wires by continuous tube forming and filling technique

    NASA Astrophysics Data System (ADS)

    Ma, L.; Suo, H. L.; Zhang, Z. L.; Gao, T. Y.; Liu, M.; Zhao, Y.; Zhou, M. L.; Flükiger, R.

    2008-02-01

    Long lengths of in-situ SiC doped MgB2/Fe mono- filamentary wires with high critical current densities and 7- filamentary MgB2/Nb/Cu/Fe wires with better thermal stability have been fabricated by either continuous tube forming & filling (CTFF) technique or combining both powder in tube (PIT) and CTFF process, respectively. Particular efforts were made in view of the optimization of the manufacturing and annealing processes of the wires. The as obtained wires were sintered under a vacuum furnace at different sintering temperatures and the optimized sintering of the MgB2 wires were investigated by the analysis of optical microscope, XRD, SEM, and the transport Jc measurements. The Jc value in a 8 at.% SiC doped MgB2/Fe mono- filamentary wire is more than 104A/cm2 at 4.2 K and a field of 11 T. While in doped 7- filamentary wire, the similar Jc value (104A/cm2) is obtained at 4.2 K and a field of 7.5 T. Moreover, the n factors are determined to be 33 and 10 at 11 T in the mono- and 7- filamentary MgB2wires with SiC doping, respectively, indicating the possibility to use the as fabricated MgB2 wires in the persistent mode for fields from 0.5 T to 10 T at 4.2 K.

  11. High quality SiC microdisk resonators fabricated from monolithic epilayer wafers

    SciTech Connect

    Magyar, Andrew P.; Bracher, David; Lee, Jonathan C.; Hu, Evelyn L.; Aharonovich, Igor

    2014-02-03

    The exquisite mechanical properties of SiC have made it an important industrial material with applications in microelectromechanical devices and high power electronics. Recently, the optical properties of SiC have garnered attention for applications in photonics, quantum information, and spintronics. This work demonstrates the fabrication of microdisks formed from a p-N SiC epilayer material. The microdisk cavities fabricated from the SiC epilayer material exhibit quality factors of as high as 9200 and the approach is easily adaptable to the fabrication of SiC-based photonic crystals and other photonic and optomechanical devices.

  12. Review of data on irradiation creep of monolithic SiC

    SciTech Connect

    Garner, F.A.; Youngblood, G.E.; Hamilton, M.L.

    1996-04-01

    An effort is now underway to design an irradiation creep experiment involving SiC composites to SiC fibers. In order to successfully design such an experiment, it is necessary to review and assess the available data for monolithic SiC to establish the possible bounds of creep behavior for the composite. The data available show that monolithic SiC will indeed creep at a higher rate under irradiation compared to that of thermal creep, and surprisingly, it will do so in a temperature-dependant manner that is typical of metals.

  13. The effect of structural defects in SiC particles on the static & dynamic mechanical response of a 15 volume percent SiC/6061-Al matrix composite

    SciTech Connect

    Vaidya, R.U.; Song, S.G.; Zurek, A.K.; Gray, G.T. III

    1995-09-01

    Static and Dynamic mechanical tests, and microstructural examinations performed on a SiC particle reinforced 6061-Al matrix composite indicated that particle cracking significantly affected the strength, strain hardening, and failure mechanism of the composite. Cracks were observed to nucleate and propagate on stacking faults and interfaces between the various phases within the reinforcing SiC particles. Planar defects were the predominant artifacts seen in the SiC particles. Partial dislocations were also observed bounding the stacking faults within the reinforcement phase.

  14. Point pinning centers in SiC doped MgB2 wires after HIP

    NASA Astrophysics Data System (ADS)

    Gajda, D.; Zaleski, A.; Morawski, A.; Cetner, T.; Thong, C. J.; Rindfleisch, M. A.

    2016-08-01

    In this study we show that dominant point pinning mechanisms in SiC doped MgB2 wires can be obtained by annealing in high isostatic pressure. The results indicate that the point pinning centers increase the critical current density in medium and high magnetic fields, but not at low magnetic fields. In addition, our study shows that dominant pinning mechanism changes from point to surface type with increase of magnetic fields. An MgB2 wire heat treated in a high pressure of 1.4 GPa shows a high critical current density of 100 A mm-2 in 13 T at 4.2 K. Scanning electron microscope studies show that high isostatic pressure increases the density of the MgB2 material, eliminates voids, allows for small Si precipitates and homogeneous distribution of Si precipitates. Transport measurements E - B and E - I show that the MgB2 wires manufactured by Hyper Tech Research did not heat up after transition into a normal state. This is important for applications in coils.

  15. Processing of laser formed SiC powder

    NASA Technical Reports Server (NTRS)

    Haggerty, J. S.; Bowen, H. K.

    1985-01-01

    Superior SiC characteristics can be achieved through the use of ideal constituent powders and careful post-synthesis processing steps. High purity SiC powders of approx. 1000 A uniform diameter, nonagglomerated and spherical were produced. This required major revision of the particle formation and growth model from one based on classical nucleation and growth to one based on collision and coalescence of Si particles followed by their carburization. Dispersions based on pure organic solvents as well as steric stabilization were investigated. Although stable dispersions were formed by both, subsequent part fabrication emphasized the pure solvents since fewer problems with drying and residuals of the high purity particles were anticipated. Test parts were made by the colloidal pressing technique; both liquid filtration and consolidation (rearrangement) stages were modeled. Green densities corresponding to a random close packed structure (approx. 63%) were achieved; this highly perfect structure has a high, uniform coordination number (greater than 11) approaching the quality of an ordered structure without introducing domain boundary effects. After drying, parts were densified at temperatures ranging from 1800 to 2100 C. Optimum densification temperatures will probably be in the 1900 to 2000 C range based on these preliminary results which showed that 2050 C samples had experienced substantial grain growth. Although overfired, the 2050 C samples exhibited excellent mechanical properties. Biaxial tensile strengths up to 714 MPa and Vickers hardness values of 2430 kg/sq mm 2 were both more typical of hot pressed than sintered SiC. Both result from the absence of large defects and the confinement of residual porosity (less than 2.5%) to small diameter, uniformly distributed pores.

  16. Corrosion Behavior of SiC Reinforced Aluminum Alloys

    DTIC Science & Technology

    1987-09-25

    observed for AA- 7075 -T6. Microscopic examination of the sur- faces showed that pitting behavior was nearly identical to that observed for the 6061...of the MMC was a dark grey which may indicate that the surface oxide was thicker. The anodic behavior of SiC/AA- 7075 -T6 and AA- 7075 -T6 sug- gested...m-- - osION BEHAVIOR OF SIC REINFORCED ALUMINUM ALLOYS (N) 0 BY J. F. MulNTYRE A. H. LE . GOLLEDGE R. CONRAD RESEARCH AND TECHNOLOGY DEPARTMENT 25

  17. Ultra High Temperature (UHT) SiC Fiber (Phase 2)

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Jacobson, Nathan S.; Lizcano, Maricela; Bhatt, Ramakrishna T.

    2015-01-01

    Silicon-carbide fiber-reinforced silicon-carbide ceramic matrix composites (SiCSiC CMC) are emerginglightweight re-usable structural materials not only for hot section components in gas turbine engines, but also for controlsurfaces and leading edges of reusable hypersonic vehicles as well as for nuclear propulsion and reactor components. Ithas been shown that when these CMC are employed in engine hot-section components, the higher the upper usetemperature (UUT) of the SiC fiber, the more performance benefits are accrued, such as higher operating temperatures,reduced component cooling air, reduced fuel consumption, and reduced emissions. The first generation of SiCSiC CMC with a temperature capability of 2200-2400F are on the verge of being introduced into the hot-section components ofcommercial and military gas turbine engines.Today the SiC fiber type currently recognized as the worlds best in terms ofthermo-mechanical performance is the Sylramic-iBN fiber. This fiber was previously developed by the PI at NASA GRC using patented processes to improve the high-cost commercial Sylramic fiber, which in turn was derived from anotherlow-cost low-performance commercial fiber. Although the Sylramic-iBN fiber shows state-of-the art creep and rupture resistance for use temperatures above 2550oF, NASA has shown by fundamental creep studies and model developmentthat its microstructure and creep resistance could theoretically be significantly improved to produce an Ultra HighTemperature (UHT) SiC fiber.This Phase II Seedling Fund effort has been focused on the key objective of effectively repeating the similar processes used for producing the Sylramic-iBN fiber using a design of experiments approach to first understand the cause of the less than optimum Sylramic-iBN microstructure and then attempting to develop processconditions that eliminate or minimize these key microstructural issues. In so doing, it is predicted that that theseadvanced process could result in an UHT SiC

  18. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the construction progress of the test stand as of August 14, 1961. Water gushing in from the disturbance of a natural spring contributed to constant water problems during the construction process. It was necessary to pump water from the site on a daily basis and is still pumped from the site today. The equipment is partially submerged in the water emerging from the spring.

  19. Plastic deformation of alumina reinforced with SiC whiskers

    SciTech Connect

    DeArellano-Lopez, A.R.; Dominguez-Rodriguez, A.; Goretta, K.C.; Routbort, J.L.

    1993-06-01

    Addition of small amounts of stiff reinforcement (SiC whiskers) to a polycrystalline AL{sub 2}O{sub 3} matrix partially inhibits grain boundary sliding because of an increase in threshold stress. When the concentration of whiskers is high enough, a pure diffusional mechanism takes over the control of plastic deformation of the composites. For higher whisker loadings, the materials creep properties depend on a microstructural feature different from the nominal grain size. A tentative correlation of this effective microstructural parameter with the spacing between the whiskers was established through a model.

  20. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, taken September 5, 1961, shows the construction of forms which became the concrete foundation for the massive stand. The lower right hand corner reveals a pump used for extracting water emerging from a disturbed natural spring that occurred during excavation of the site. The pumping became a daily ritual and the site is still pumped today.

  1. Construction Progress of S-IC Test Stand Pump House

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built to the northeast east was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. This photograph of the Pump House area was taken August 13, 1963. The massive round water storage tanks can be seen to the left of

  2. Construction Progress S-IC Test Stand Block House Interior

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built directly east of the test stand was the Block House, which served as the control center for the test stand. The two were connected by a narrow access tunnel which housed the cables for the controls. This photograph, taken August 12, 1963, offers a view of the Block House interior.

  3. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. After a six month delay in construction due to size reconfiguration of the Saturn booster, the site was revisited for modifications in March 1962. The original foundation walls built in the prior year were torn down and re-poured to accommodate the larger boosters. This photo depicts that modification progress as of June 13,1962.

  4. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. After a 6 month delay in construction due to size reconfiguration of the Saturn booster, the site was revisited for modifications. The original foundation walls built in the prior year had to be torn down and re-poured to accommodate the larger booster. The demolition can be seen in this photograph taken on May 21, 1962.

  5. Energy Use in Manufacturing

    EIA Publications

    2006-01-01

    This report addresses both manufacturing energy consumption and characteristics of the manufacturing economy related to energy consumption. In addition, special sections on fuel switching capacity and energy-management activities between 1998 and 2002 are also featured in this report.

  6. RRR Niobium Manufacturing Experience

    SciTech Connect

    Graham, Ronald A.

    2007-08-09

    ATI Wah Chang has been manufacturing RRR niobium for more than 30 years using electron beam melting techniques. Fabricated forms include plate, sheet, foil, bar, rod and tubing. This paper provides manufacturing information.

  7. Iron and Nickel Isotope Measurements on SiC X Grains with CHILI

    NASA Astrophysics Data System (ADS)

    Kodolányi, J.; Stephan, T.; Trappitsch, R.; Hoppe, P.; Pignatari, M.; Davis, A. M.; Pellin, M. J.

    2016-08-01

    New measurements with CHILI on SiC X grains provide more detailed Fe and Ni isotope data than previous NanoSIMS analyses. The new data suggest that Fe-Ni fractionation may occur in supernova ejecta before SiC condensation.

  8. First-principles prediction of stable SiC cage structures and their synthesis pathways

    NASA Astrophysics Data System (ADS)

    Pochet, Pascal; Genovese, Luigi; Caliste, Damien; Rousseau, Ian; Goedecker, Stefan; Deutsch, Thierry

    2010-07-01

    In this paper we use density functional theory calculations to investigate the structure and the stability of different SiC cagelike clusters. In addition to the fullerene family and the mixed four and six membered ring family, we introduce a family based on reconstructed nanotube slices. We propose an alternative synthesis pathway starting from SiC nanotubes.

  9. Highly flexible, nonflammable and free-standing SiC nanowire paper.

    PubMed

    Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

    2015-04-14

    Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ∼100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.

  10. Porous SiC nanowire arrays as stable photocatalyst for water splitting under UV irradiation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Arrays of porous SiC nanowires prepared by a facile in situ carbonizing method. Black-Right-Pointing-Pointer Utilizing the SiC nanowire arrays as photocatalysis for water splitting. Black-Right-Pointing-Pointer Excellent photocatalytic performance under the UV irradiation. Black-Right-Pointing-Pointer Very high stability of the SiC nanowire photocatalyst. -- Abstract: In this study, we report the fabrication and photocatalytic properties of the oriented arrays of SiC nanowires on the Si substrate. The SiC nanowire arrays were prepared by carbonizing the Si nanowire arrays with the graphite powder at 1250 Degree-Sign C. The as-prepared SiC nanowires are highly porous, which endows them with a high surface-to-volume ratio. Considering the large surface areas and the high stability, the porous SiC nanowire arrays were used as photocatalyst for water splitting under UV irradiation. It was found that such porous SiC structure exhibited an enhanced and extremely stable photocatalytic performance.

  11. Connecting American Manufacturers (CAM)

    DTIC Science & Technology

    2013-09-01

    AFRL-RX-WP-TR-2013-0221 CONNECTING AMERICAN MANUFACTURERS (CAM) Nainesh B. Rathod Imaginestics, LLC SEPTEMBER 2013...SUBTITLE CONNECTING AMERICAN MANUFACTURERS (CAM) 5a. CONTRACT NUMBER FA8650-12-C-5515 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 63680F 6...Connecting American Manufacturing (CAM) initiative sought to improve participation of small manufacturers in building components for the military by

  12. Designing using manufacturing features

    NASA Astrophysics Data System (ADS)

    Szecsi, T.; Hoque, A. S. M.

    2012-04-01

    This paper presents a design system that enables the composition of a part using manufacturing features. Features are selected from feature libraries. Upon insertion, the system ensures that the feature does not contradict the design-for-manufacture rules. This helps eliminating costly manufacturing problems. The system is developed as an extension to a commercial CAD/CAM system Pro/Engineer.

  13. Workforce Development for Manufacturing

    ERIC Educational Resources Information Center

    Bernard, Rosalie

    2007-01-01

    In a recent skills gap report, the National Association of Manufacturers (NAM) noted some disturbing trends in the gap between the demand for highly skilled manufacturing workers and the potential supply. The NAM report notes that smaller manufacturers rank finding qualified workers ahead of energy costs, taxes and government regulations on the…

  14. Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique.

    PubMed

    Bao, Jianfeng; Norimatsu, Wataru; Iwata, Hiroshi; Matsuda, Keita; Ito, Takahiro; Kusunoki, Michiko

    2016-11-11

    Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

  15. Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

    NASA Astrophysics Data System (ADS)

    Bao, Jianfeng; Norimatsu, Wataru; Iwata, Hiroshi; Matsuda, Keita; Ito, Takahiro; Kusunoki, Michiko

    2016-11-01

    Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

  16. The first muon beam from a new highly-intense DC muon source, MuSIC

    NASA Astrophysics Data System (ADS)

    Tran, Nam Hoai; MuSIC Collaboration

    2012-09-01

    A new DC muon source, MuSIC, is now under construction at Research Center for Nuclear Physics (RCNP), Osaka University, Japan. The MuSIC adopts a new pion/muon collection system and a curved transport solenoid. These techniques are important in realization of future muon programs such as the muon to electron conversion experiments (COMET/Mu2e), neutrino factories, and muon colliders. The pion capture magnet and a part of the transport solenoid have been built and beam tests were carried out to assess the MuSIC's performance. Muon lifetime measurements and muonic X-ray measurements have been used for estimation of muon yield of the MuSIC. The result indicates that the MuSIC would be one of the most intense DC muon beams in the world.

  17. The role of Pd in the transport of Ag in SiC

    NASA Astrophysics Data System (ADS)

    Olivier, E. J.; Neethling, J. H.

    2013-01-01

    This paper presents results in support of a newly proposed transport mechanism to account for the release of Ag from intact TRISO particles during HTR reactor operation. The study reveals that the migration of Ag in polycrystalline SiC can occur in association with Pd, a relatively high yield metallic fission product. The migration takes place primarily along grain boundary routes, seen in the form of distinct Pd, Ag and Si containing nodules. Pd is known to rapidly migrate to the SiC and iPyC interface within TRISO particles during operation. It has been shown to chemically corrode the SiC to form palladium silicides. These palladium silicides are found present along SiC grain boundaries in nodule like form. It is suggested that Ag penetrates these nodules together with the palladium silicide, to form a Pd, Ag and Si solution capable of migrating along SiC grain boundaries over time.

  18. Mechanical and microstructural characterization of Al7075/SiC nanocomposites fabricated by dynamic compaction

    NASA Astrophysics Data System (ADS)

    Atrian, A.; Majzoobi, G. H.; Enayati, M. H.; Bakhtiari, H.

    2014-03-01

    This paper describes the synthesis of Al7075 metal matrix composites reinforced with SiC, and the characterization of their microstructure and mechanical behavior. The mechanically milled Al7075 micron-sized powder and SiC nanoparticles are dynamically compacted using a drop hammer device. This compaction is performed at different temperatures and for various volume fractions of SiC nanoparticles. The relative density is directly related to the compaction temperature rise and indirectly related to the content of SiC nanoparticle reinforcement, respectively. Furthermore, increasing the amount of SiC nanoparticles improves the strength, stiffness, and hardness of the compacted specimens. The increase in hardness and strength may be attributed to the inherent hardness of the nanoparticles, and other phenomena such as thermal mismatch and crack shielding. Nevertheless, clustering of the nanoparticles at aluminum particle boundaries make these regions become a source of concentrated stress, which reduces the load carrying capacity of the compacted nanocomposite.

  19. A NEW TYPE OF SIC COMPOSITE FOR FUSION

    SciTech Connect

    Youngblood, Gerald E.; Jones, Russell H.

    2001-04-01

    A new type of SiC composite called Tyrannohex™ is potentially suitable as a fusion reactor structural material. Tyrannohex™ composite plates are made by hot-pressing layups of Tyranno™ SA precursor fibers into various 1D and 2D configurations. The fiber-bonded composite plates contain nearly 100% fiber volume, so take advantage of the outstanding high temperature strength and creep properties of the Tyranno™ SA fiber, a nearly stoichiometric SiC fiber. The hot-pressed plates are dense, strong, rigid, tough, thermally conductive and have high temperature stability. The microstructure and thermal conductivity of a SA-Tyrannohex™ material with a 2D-woven configuration was evaluated prior to irradiation testing. The microstructure contained some small, flat interlaminar pores and intrabundle needle-like pores, and the transverse thermal conductivity was 25 and 21 W/mK at ambient and 1000°C, respectively. These results suggest that careful control of the fiber-bonded interlayers and the fiber architecture are critical to achieve both high thermal conductivity and toughness in Tyrannohex™ type materials.

  20. Cohort profile: the Social Inequality in Cancer (SIC) cohort study.

    PubMed

    Nordahl, Helene; Hvidtfeldt, Ulla Arthur; Diderichsen, Finn; Rod, Naja Hulvej; Osler, Merete; Frederiksen, Birgitte Lidegaard; Prescott, Eva; Tjønneland, Anne; Lange, Theis; Keiding, Niels; Andersen, Per Kragh; Andersen, Ingelise

    2014-12-01

    The Social Inequality in Cancer (SIC) cohort study was established to determine pathways through which socioeconomic position affects morbidity and mortality, in particular common subtypes of cancer. Data from seven well-established cohort studies from Denmark were pooled. Combining these cohorts provided a unique opportunity to generate a large study population with long follow-up and sufficient statistical power to develop and apply new methods for quantification of the two basic mechanisms underlying social inequalities in cancer-mediation and interaction. The SIC cohort included 83 006 participants aged 20-98 years at baseline. A wide range of behavioural and biological risk factors such as smoking, physical inactivity, alcohol intake, hormone replacement therapy, body mass index, blood pressure and serum cholesterol were assessed by self-administered questionnaires, physical examinations and blood samples. All participants were followed up in nationwide demographic and healthcare registries. For those interested in collaboration, further details can be obtained by contacting the Steering Committee at the Department of Public Health, University of Copenhagen, at inan@sund.ku.dk.

  1. Synthesis and characterization of SiC whiskers

    SciTech Connect

    Wang, L.; Wada, H. ); Allard, L.F. )

    1992-01-01

    SiC whiskers were synthesized by the carbothermal reduction of silica with an addition of halide (3NaF{center dot}AlF{sub 3} or NaF) as an auxiliary bath. The whiskers were {beta} phase (3C) and grew in the (111) direction. Three distinctive morphologies were observed: (1) Type A: thin and straight; (2) Type B: thick and bamboo-like; and (3) Type C: thick, straight, and smooth. Type A whiskers contained a high density of basal plane (111) stacking faults along their entire length, whereas Type B whiskers showed periodic changes between stacking faults and well-defined single crystals. Type C whiskers showed stacking faults on the other {l brace}111{r brace} planes instead of on the basal (111) plane. Silica formed molten fluorosilicate with halide and SiC grew via a vapor-solid reaction mechanism through gaseous SiO. These reactions can be expressed as (SiO{sub 2})+C(s)=SiO(g)+CO(g) and SiO(g)+3CO(g)=SiC(s)+2CO{sub 2}(g). The effects of processing parameters on the morphology and size of the whiskers were examined and the relationship between the morphological development of the whiskers and the stacking fault energy was determined.

  2. Processing of laser formed SiC powder

    NASA Technical Reports Server (NTRS)

    Haggerty, J. S.; Bowen, H. K.

    1987-01-01

    Processing research was undertaken to demonstrate that superior SiC characteristics could be achieved through the use of ideal constituent powders and careful post-synthesis processing steps. Initial research developed the means to produce approximately 1000 A uniform diameter, nonagglomerated, spherical, high purity SiC powders. Accomplishing this goal required major revision of the particle formation and growth model from one based on classical nucleation and growth to one based on collision and coalescence of Si particles followed by their carburization. Dispersions based on pure organic solvents as well as steric stabilization were investigated. Test parts were made by the colloidal pressing technique; both liquid filtration and consolidation (rearrangement) stages were modeled. Green densities corresponding to a random close packed structure were achieved. After drying, parts were densified at temperatures ranging from 1800 to 2100 C. This research program accomplished all of its major objectives. Superior microstructures and properties were attained by using powders having ideal characteristics and special post-synthesis processing procedures.

  3. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-08-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep {open_quotes}m{close_quotes} curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261{degrees}C), Nicalon S (1256{degrees}C), annealed Hi Nicalon (1215{degrees}C), Hi Nicalon (1078{degrees}C), Nicalon CG (1003{degrees}C) and Tyranno E (932{degrees}C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests.

  4. Multi-functional micro electromechanical devices and method of bulk manufacturing same

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2004-01-01

    A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

  5. Microstructure characterization of SiC nanowires as reinforcements in composites

    SciTech Connect

    Dong, Ronghua; Yang, Wenshu; Wu, Ping; Hussain, Murid; Xiu, Ziyang; Wu, Gaohui; Wang, Pingping

    2015-05-15

    SiC nanowires have been rarely investigated or explored along their axial direction by transmission electron microscopy (TEM). Here we report the investigation of the cross-section microstructure of SiC nanowires by embedding them into Al matrix. Morphology of SiC nanowires was cylindrical with smooth surface or bamboo shape. Cubic (3C-SiC) and hexagonal structure (2H-SiC) phases were detected by X-ray diffraction (XRD) analysis. High density stacking faults were observed in both the cylindrical and bamboo shaped nanowires which were perpendicular to their axial direction. Selected area electron diffraction (SAED) patterns of the cylindrical and bamboo shaped SiC nanowires both in the perpendicular and parallel direction to the axial direction were equivalent in the structure. After calculation and remodeling, it has been found that the SAED patterns were composed of two sets of diffraction patterns, corresponding to 2H-SiC and 3C-SiC, respectively. Therefore, it could be concluded that the SiC nanowires are composed of a large number of small fragments that are formed by hybrid 3C-SiC and 2H-SiC structures. - Graphical abstract: Display Omitted - Highlights: • Cross-section microstructure of SiC nanowires was observed in Al composite. • Cylindrical with smooth surface or bamboo shape SiC nanowires were found. • The cylindrical and bamboo shaped SiC nanowires were equivalent in structure. • Structure of SiC nanowires was remodeled. • SiC nanowires are composed of hybrid 3C-SiC and 2H-SiC structures.

  6. Generative design drives manufacturing

    NASA Astrophysics Data System (ADS)

    Logan, Frank A.

    1989-04-01

    This paper reviews the collaboration that is being forced on Engineering and Manufacturing as they move from the manual translation of Engineering drawings toward automatic decoding of Product Data Definitions (PDDs), a pre-requisite to integrated manufacture. Based on case studies and implementation experience gained over the last decade, it defines the step-by-step evolution of a generative design capability that will drive manufacturing logic. It reviews the changing relationship of Engineering to Manufacturing and Industrial Engineering and the challenge this presents to manufacturing management in its struggle to remain competitive in both domestic and international markets.

  7. Manufacturing Planning Guide

    NASA Technical Reports Server (NTRS)

    Waid, Michael

    2011-01-01

    Manufacturing process, milestones and inputs are unknowns to first-time users of the manufacturing facilities. The Manufacturing Planning Guide aids in establishing expectations for both NASA and non-NASA facility customers. The potential audience for this guide includes both internal and commercial spaceflight hardware/software developers. It is intended to assist their project engineering personnel in manufacturing planning and execution. Material covered includes a roadmap of the manufacturing process, roles and responsibilities of facility and user, major milestones, facility capabilities, and inputs required by the facility. Samples of deliverables, products, and inputs necessary to define test scope, cost, and schedule are included as an appendix to the guide.

  8. History of the ISS/SIC: Antoine Depage, one of the founders of the ISS/SIC.

    PubMed

    Van Hee, R

    2002-10-01

    Antoine Depage, born near Brussels in 1862, was one of the founders and first Secretary General of the Société Internationale de Chirurgie (ISS-SIC). After an excellent medical education at the Free Brussels University, he became professor at the same university at the age of 27. Surgically trained by Prof. Thiriar, he became one of the leading Belgian surgeons at the end of the nineteenth century, and he published more than 100 articles in national and international journals. In 1907 he founded a school for nurses in Brussels, to be directed by Edith Cavell. He also vigorously transformed the organization of the public hospitals in the Belgian capital. During World War I Queen Elisabeth appointed him surgeon-in-chief of the Océan-hospital in De Panne, where more than 50,000 soldiers with wounds, fractures, cerebral trauma, nitrous gas intoxication, and infectious diseases, among other problems were treated. The results he and his team obtained were excellent, and mortality was low. Many surgeons, including Alexis Carrel, as well as distinguished political leaders came to visit him in the hospital barracks. After the war he was honored by many political and scientific organizations, including the Société Internationale de Chirurgie. He served our Society not only as Secretary General from 1902 to 1912 but became President of the 4th Congress of the ISS-SIC in New York. Antoine Depage died after a long illness in 1925.

  9. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    SciTech Connect

    Cao, J. |

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  10. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    DOE PAGES

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500more » C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.« less

  11. Synthesis of SiC nanowires with in-situ deposition of carbon coating.

    PubMed

    Yang, Wen; Araki, Hiroshi; Tang, Chengchun; Hu, Quanli; Suzuki, Hiroshi; Noda, Tetsuji

    2005-02-01

    SiC nanowires are effective reinforcement materials in ceramic matrix composites. A compliant coating such as carbon on nanowires is necessary in order to moderate the nanowire/matrix interfacial bounding for taking the most advantages of SiC nanowires. SiC nanowires with an in-situ deposition of carbon shell coating were fabricated by a novel chemical vapor growth process. Highresolution transmission electron microscopy examinations showed that the nanowires consisted of a single crystal beta-SiC core with an amorphous carbon shell 2-5 nm in thickness. The nanowires were straight with a length generally over 10 microm and a diameter 15-150 nm. The growth direction of the core SiC nanowires is (111). A simple three-step growth model for SiC nanowires was proposed based on a vapor-solid growth mechanism. Because the carbon-coated nanowires were grown directly on continuous Tyranno-SA SiC fibers, in-situ application of the present technique on the fabrication of SiC nanowire-reinforced SiC/SiC composites is expected.

  12. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor

    NASA Astrophysics Data System (ADS)

    Huang, Alex Q.; Zhang, Bo

    2000-02-01

    This paper for the first time systematically analyzed the operation mechanism of SiC NPN transistors. Theoretical device figure-of-merits for switching power devices based on the conduction loss and switching loss were developed. The on-state loss and the switching loss of 4.5-kV SiC switching power devices (MOSFET, NPN transistor and GTO thyristor) were then compared by using theoretical and numerical calculations. Special emphasis is placed on comparing the total power loss of the devices at a given current density. Theoretical analyses and simulation results show that GTO thyristors have a large switching loss due to the long current tail at turn-off, hence restricting its maximum operation frequency. High voltage SiC MOSFETs have a large on-state power dissipation at high current levels due to the resistive nature of the drift region, restricting their applications at high current densities. SiC NPN transistors have a comparable switching loss as that of SiC MOSFETs, but at the same time, SiC NPN transistors have the lowest on-state loss. This study indicates that SiC NPN transistor is the most attractive switching power device at 4.5 kV.

  13. Near-surface and bulk behavior of Ag in SiC

    SciTech Connect

    Xiao, Haiyan; Zhang, Yanwen; Snead, Lance Lewis; Shutthanandan, Vaithiyalingam; Xue, Haizhou; Weber, William J

    2012-01-01

    The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the near-surface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85-1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

  14. Near-surface and bulk behavior of Ag in SiC

    SciTech Connect

    Xiao, Haiyan Y.; Zhang, Yanwen; Snead, Lance L.; Shutthanandan, V.; Xue, Haizhou; Weber, William J.

    2012-01-01

    The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the nearsurface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85~1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in 2 SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

  15. SiC: Polar properties and their influence on technology and devices

    NASA Astrophysics Data System (ADS)

    Helbig, R.; Engelbrecht, F.

    Silicon Carbide (SiC) is one of the tetrahedrally coordinated semiconductor materials with a wide band gap E g. Due to the strong asymmetric valence charge density distribution along the `Si-C' bond, nearly the complete bond charge is closely located at the carbon atom. Therefore, SiC is piezoelectric and shows a strong `Reststrahl' absorption which allows the investigation of optical transitions due to impurities (vibrational and electronic transitions) only in a narrow band in the infrared spectral region. The polar character of the `Si-C' bond also strongly influences the physico-chemical properties of SiC which are of fundamental importance for the successful development of process technologies for to electronic devices. The state of the art and new developments in the fields crystal growth, oxidation and reactive ion etching of SiC are reported. In addition to the polar properties of the SiC, also the anisotropic properties have to be taken into account for the design and the processing of electronic devices.

  16. Microwave absorbability of unidirectional SiC fiber composites as a function of the constituents’ properties

    NASA Astrophysics Data System (ADS)

    Wan, Guangchao; Jiang, Jianjun; He, Yun; Bie, Shaowei

    2016-06-01

    The electromagnetic properties of unidirectional SiC fibre composites can be efficiently tailored by adjusting the properties of the composite’s constituents making these composites potential microwave absorbers. In this study, the microwave absorbing properties of unidirectional SiC fibre composites were investigated based on the electromagnetic properties of the constituents at frequencies ranging from 8 to 18 GHz. The composite was composed of two types of SiC fibres that individually exhibit relatively high and low electrical conductivity. The matrix together with the low-conductivity SiC fibres were characterized by effective permittivity and conductivity which provided a theoretical calculation of the microwave reflectivity. The theoretical calculation was based on formulas about anisotropic unidirectional composites and was compared to the results obtained from numerical simulations. There was good agreement in the results obtained from both methods. It was found that the intensity of microwave absorption of the composite was dependent primarily on the properties of the high-conductivity SiC fibres. The absorption band appeared to be dependent on the effective permittivity of the matrix and the low-conductivity SiC fibres and the conductivity of the high-conductivity SiC fibres.

  17. Creep of chemically vapor deposited SiC fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, J. A.

    1984-01-01

    The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

  18. Graphene nanoribbons anchored to SiC substrates

    NASA Astrophysics Data System (ADS)

    Le, Nam B.; Woods, Lilia M.

    2016-09-01

    Graphene nanoribbons are quasi-one-dimensional planar graphene allotropes with diverse properties dependent on their width and types of edges. Graphene nanoribbons anchored to substrates is a hybrid system, which offers novel opportunities for property modifications as well as experimental control. Here we present electronic structure calculations of zigzag graphene nanoribbons chemically attached via the edges to the Si or C terminated surfaces of a SiC substrate. The results show that the edge characteristics are rather robust and the properties are essentially determined by the individual nanoribbon. While the localized spin polarization of the graphene nanoribbon edge atoms is not significantly affected by the substrate, secondary energy gaps in the highest conduction and lowest valence region may emerge in the anchored structures. The van der Waals interaction together with the electrostatic interactions due to the polarity of the surface bonds are found to be important for the structure parameters and energy stability.

  19. Demonstration of SiC Pressure Sensors at 750 C

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2014-01-01

    We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

  20. Interaction Of Water Molecules With SiC(001) Surfaces

    SciTech Connect

    Cicero, G; Catellani, A; Galli, G

    2004-08-10

    We have investigated the interaction of water molecules with the polar Si- and C- terminated surfaces of cubic Silicon Carbide by means of ab initio molecular dynamics simulations at finite temperature. Different water coverages were considered, from {1/4} to a complete monolayer. Irrespective of coverage, we find that water dissociates on the silicon terminated surfaces, leading to important changes in both its structural and electronic properties. On the contrary, the carbon terminated surface remains inert when exposed to water. We propose experiments to reveal the ionic and electronic structure of wet Si-terminated surfaces predicted by our calculations, which at full coverage are notably different from those of hydrated Si(001) substrates. Finally, we discuss the implications of our results for SiC surface functionalization.

  1. Electronic structure of Si vacancy centers in SiC

    NASA Astrophysics Data System (ADS)

    Soykal, Oney; Dev, Pratibha; Economou, Sophia

    2015-03-01

    The spin state of silicon vacancies in SiC is a promising candidate for applications in solid state quantum information technologies due to its long coherence time at room temperature, its technological availability and wide range of polytypism. Until recently, the electronic structure of this vacancy was not well understood. We have developed a group theoretical model that correctly predicts the spin 3/2 structure seen in recent experiments for the 4H-SiC defect. We have included several different mechanisms involved in the mixing of its spin states, such as crystal field splitting, spin-orbit coupling, spin-spin coupling, strain and Jahn-Teller interactions. We have also carried out DFT calculations that support and complement our analytical results.

  2. Comparative study of SiC- and Si-based photovoltaic inverters

    NASA Astrophysics Data System (ADS)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  3. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    DOE PAGES

    Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; ...

    2016-04-06

    As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compactmore » containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.« less

  4. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    SciTech Connect

    Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M.; Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A.

    2016-04-06

    As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.

  5. SiC multi-layer protective coating on carbon obtained by thermionic vacuum arc method

    NASA Astrophysics Data System (ADS)

    Ciupina, V.; Lungu, C. P.; Vladoiu, R.; Epure, T.-D.; Prodan, G.; Roşca, C.; Porosnicu, C.; Jepu, I.; Belc, M.; Prodan, M.; Stanescu, I. M.; Stefanov, C.; Contulov, M.; Mandes, A.; Dinca, V.; Vasile, E.; Zarovschi, V.; Nicolescu, V.

    2013-09-01

    SiC single-layer or multi-layer on C used to improve the oxidation resistance and tribological properties of C have been obtained by Thermionic Vacuum Arc (TVA) method. The 200nm thickness carbon thin films was deposed on glass or Si substrate and then 100÷500 nm thickness SiC successively layers on carbon thin film was deposed. The microstructure and mechanical characteristics of as-prepared SiC coating were investigated by Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDS), Electron Scattering Chemical Analysis (ESCA) and tribological techniques. Samples containing SiC single-layer or multi-layer coating on carbon were investigated up to 1000°C. The results of thermal treatments reveals the increase of oxidation resistance with increase of the number of SiC layers. The mechanism of oxidation protection is based on the reaction between SiC and elemental oxygen resulting SiO2 and CO. The tribological behavior of SiC coatings was evaluated with a tribometer with ball-on-disk configuration from CSM device with 6mm diameter sapphire ball, sliding speed in dry conditions being 0.2m/s, with normal contact loads of 0.5N, 1N, 1.5N and 2N, under unlubricated conditions. The friction coefficient on SiC was compared with the friction coefficient on uncoated carbon layer. Electrical surface resistance of SiC coating on carbon at different temperatures was measured comparing the potential drop on the sample with the potential drop on a series standard resistance in constant mode.

  6. Manufacturing Information System.

    DTIC Science & Technology

    1983-12-22

    university classroom to aid in education and training of new manufacturing engineers. It is the purpose for this research to continue the development...PAUL R. SMITH 175 South 600 East #1 Provo, Utah 84601 (801) 377-8068 CAREER OBJECTIVE: Manufacturing Engineer using skills in development and...university classroom to aid in the education and train- ing of new manufacturing engineers. , . o i . o ., . . . . . - ,’ o . -2- 1.2. NEED There is a current

  7. Thermostructural Properties Of Sic/Sic Panels With 2.5d And 3d Fiber Architectures

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; DeCarlo, J. A.; Bhatt, R. H.; Jaskowiak, M. H.

    2005-01-01

    CMC hot-section components in advanced engines for power and propulsion will typically require high cracking strength, high ultimate strength and strain, high creep- rupture resistance, and high thermal conductivity in all directions. In the past, NASA has demonstrated fabrication of a variety of SiC/SiC flat panels and round tubes with various 2D fiber architectures using the high-modulus high-performance Sylramic-iBN Sic fiber and Sic-based matrices derived by CVI, MI, and/or PIP processes. The thermo- mechanical properties of these CMC have shown state-of-the-art performance, but primarily in the in-plane directions. Currently NASA is extending the thermostructural capability of these SiC/SiC systems in the thru-thickness direction by using various 2.5D and 3D fiber architectures. NASA is also using specially designed fabrication steps to optimize the properties of the BN-based interphase and Sic-based matrices. In this study, Sylramic-iBN/SiC panels with 2D plain weave, 2.5D satin weave, 2.5D ply-to-ply interlock weave, and 3D angle interlock fiber architectures, all woven at AITI, were fabricated using matrix densification routes previously established between NASA and GEPSC for CVI-MI processes and between NASA and Starfire-Systems for PIP processes. Introduction of the 2.5 D fiber architecture along with an improved matrix process was found to increase inter-laminar tensile strength from 1.5 -2 to 3 - 4 ksi and thru-thickness thermal conductivity from 15-20 to 30-35 BTU/ft.hr.F with minimal reduction in in-plane strength and creep-rupture properties. Such improvements should reduce thermal stresses and increase the thermostructural operating envelope for SiC/SiC engine components. These results are analyzed to offer general guidelines for selecting fiber architectures and constituent processes for high-performance SiC/SiC engine components.

  8. Similarities and differences in sublimation growth of SiC and AlN

    NASA Astrophysics Data System (ADS)

    Epelbaum, B. M.; Bickermann, M.; Nagata, S.; Heimann, P.; Filip, O.; Winnacker, A.

    2007-07-01

    The similarities and differences in development of crystal growth of bulk silicon carbide (SiC) and aluminum nitride (AlN) are discussed. It is concluded that AlN is going to become the second crystal grown in production scale using PVT technique. The growth technology of AlN may take advantage of learning from SiC technology as the latter is based on significant advances achieved in the course of last 20 years. The main differences between two materials are in incongruent evaporation of SiC and in poor compatibility of AlN with regular high-temperature crucible materials.

  9. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  10. Preparation and characterization of pulsed laser deposition (PLD) SiC films

    NASA Astrophysics Data System (ADS)

    Tang, Y. H.; Sham, T.-K.; Yang, D.; Xue, L.

    2006-03-01

    Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ˜5 J/cm 2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.

  11. Atomistic simulation of free transverse vibration of graphene, hexagonal SiC, and BN nanosheets

    NASA Astrophysics Data System (ADS)

    Nguyen, Danh-Truong; Le, Minh-Quy; Bui, Thanh-Lam; Bui, Hai-Le

    2017-02-01

    Free transverse vibration of monolayer graphene, boron nitride (BN), and silicon carbide (SiC) sheets is investigated by using molecular dynamics finite element method. Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratios with respect to various boundary conditions. It is found that aspect ratios and boundary conditions affect in a similar way on natural frequencies of graphene, BN, and SiC sheets. Natural frequencies in all modes decrease with an increase of the sheet's size. Graphene exhibits the highest natural frequencies, and SiC sheet possesses the lowest ones. Missing atoms have minor effects on natural frequencies in this study.

  12. Ab initio prediction of SiC nanotubes with negative strain energy

    SciTech Connect

    Alfieri, G.; Kimoto, T.

    2014-01-20

    Single-layer SiC nanotubes (SiCNTs) are known to be metastable structures that is why only nanotubular fibers or polygrained nanotubes have been obtained experimentally. In this study, we report on how hydrogen helps to overcome the metastability of SiCNTs. Starting from SiC graphitic sheets, we analyzed the impact of either partial or full hydrogenation on the electronic properties and structural stability of SiCNTs. It is shown that, in general, hydrogenation widens the band gap of both SiC graphitic sheets and nanotubes and, irrespective of the difference in chirality and diameter, leads to the formation of energetically stable SiCNTs.

  13. A New Method to Grow SiC: Solvent-Laser Heated Floating Zone

    NASA Technical Reports Server (NTRS)

    Woodworth, A. A.; Neudeck, Philip G.; Sayir, Ali

    2012-01-01

    The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.

  14. SiC nanofibers grown by high power microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-05-01

    Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C.

  15. Design and fabrication of large-scale lightweight SiC space mirror

    NASA Astrophysics Data System (ADS)

    Zhang, Jianhan; Zhang, Yumin; Han, Jiecai; He, Xiaodong; Yao, Wang

    2006-02-01

    Silicon carbide is a new type of optics material developed in recent years because it offered some advantages over other traditional optical substrate materials such as low density, low thermal expansion coefficient, high thermal conductivity, big special heat, big modulus of elasticity and potential cost and schedule. So in this paper, the silicon carbide space mirror was fabricated by both reaction bonded (RB) and chemical vapor deposition (CVD) process. The green body of the space mirror was prepared by silicon carbide powder, carbon powder, dilution and solidified agent using slip casting method. The space mirror blank was prepared by green body and pure silicon powder. They were laid in vacuum sintering furnace and sintered at 1500°C. In this temperature, silicon was melting then infiltrated in SiC green body and reacted with carbon to generate the new SiC, at the same time, bonded original SiC powder, in the end, the nonporous SiC/Si space mirror blank was fabricated. The reaction bonded silicon carbide (RBSiC) was consistent with original SiC powder, new generated SiC and unreacted Si. Because RBSiC was SiC/Si two-phase structure, the hardness difference between SiC and Si made the space mirror difficult to achieve precision optical surface by grinding. So a full density SiC thin film was coated on the surface of space mirror blank with RBSiC by chemical vapor deposition (CVD) process. The raw material was CH3SiCl3. The hydrogen (H2) was catalyst. The deposition temperature was 1300°C. The cooling rate could be controlled. The SiC space mirror was honeycomb open back lightweight structure. The honeycomb cellar could be triangle, rectangle, hexogen and sector. The biggest diameter of SiC space mirror blank which has been fabricated is approach one meter by forgoing process. In order to the forgoing process was feasible, a flat round SiC space mirror with 250mm diameter. The space mirror was composed of a 4mm thick round plane faceplate and hexagonal cellar

  16. Diffusion of helium in SiC and implications for retention of cosmogenic He

    NASA Astrophysics Data System (ADS)

    Cherniak, D. J.; Watson, E. B.; Trappisch, R.; Thomas, J. B.; Chaussende, D.

    2016-11-01

    Diffusion of helium has been characterized in silicon carbide of cubic and hexagonal (4H and 6H) forms. Polished sections of SiC were implanted with 3He at 100 keV at a dose of 1 × 1015/cm2. The implanted SiC samples were sealed under vacuum in silica glass ampoules, and annealed in 1-atm furnaces. 3He distributions following all experiments were measured with Nuclear Reaction Analysis using the reaction 3He(d,p)4He. For He diffusion in cubic SiC and 4H hexagonal SiC we obtain the following Arrhenius relations: Dcubic = 1.83 ×10-6 exp (- 254 ± 10kJmol-1 /RT)m2s-1 . D4H = 4.78 ×10-7 exp (- 255 ± 29kJmol-1 /RT)m2s-1 . While He diffusion is considerably slower in SiC than in many silicate phases, He retentivity may be limited under some conditions. For example, helium will be lost from SiC grains over much shorter timescales than potential survival times of SiC presolar grains in the solar nebula. When exposed to impact heating followed by slow cooling, nearly complete loss of He from SiC grains near the site of impact will occur within several hours to a few days. For SiC grains at greater distance from impact sites, He would be better retained, depending on the rapidity of cooling. At tens of km away from a large impactor, where peak T would be ∼800 K, SiC grains would lose about 50% of their He if the grains cooled within a few thousand years, and 5% if they cooled within a few tens of years. At greater distances where heating is more modest (500 K and lower), SiC grains would be quite retentive of He even for cases of very slow cooling. Helium would also be retained in cases of impact heating followed by very rapid cooling. For these short heating pulses, 10 μm diameter SiC grains would retain more than 50% of their He for peak heating temperatures of 2173, 1973 and 1773 K for durations of 3, 10 and 60 s, respectively.

  17. Thermal expansion and thermal expansion anisotropy of SiC polytypes

    NASA Technical Reports Server (NTRS)

    Li, Z.; Bradt, R. C.

    1987-01-01

    The principal axial coefficients of thermal expansion for the (3C), (4H), and (6H) polytypes of SiC are considered to identify the structural role of the stacking layer sequence as it affects the thermal expansion. A general equation based on the fractions of cubic and hexagonal layer stacking is developed that expresses the principal axial thermal expansion coefficients of all of the SiC polytypes. It is then applied to address the thermal expansion anisotropy of the noncubic SiC structures.

  18. Graphene growth by molecular beam epitaxy on the carbon-face of SiC

    SciTech Connect

    Moreau, E.; Godey, S.; Ferrer, F. J.; Vignaud, D.; Wallart, X.; Avila, J.; Asensio, M. C.; Bournel, F.; Gallet, J.-J.

    2010-12-13

    Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (0001), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.

  19. Plasmid DNA manufacturing technology.

    PubMed

    Carnes, Aaron E; Williams, James A

    2007-01-01

    Today, plasmid DNA is becoming increasingly important as the next generation of biotechnology products (gene medicines and DNA vaccines) make their way into clinical trials, and eventually into the pharmaceutical marketplace. This review summarizes recent patents and patent applications relating to plasmid manufacturing, in the context of a comprehensive description of the plasmid manufacturing intellectual property landscape. Strategies for plasmid manufacturers to develop or in-license key plasmid manufacturing technologies are described with the endpoint of efficiently producing kg quantities of plasmid DNA of a quality that meets anticipated European and FDA quality specifications for commercial plasmid products.

  20. Manufacturing with the Sun

    NASA Technical Reports Server (NTRS)

    Murphy, Lawrence M.; Hauser, Steven G.; Clyne, Richard J.

    1991-01-01

    Concentrated solar radiation is now a viable alternative source for many advanced manufacturing processes. Researchers at the National Renewable Energy Laboratory (NREL) have demonstrated the feasibility of processes such as solar induced surface transformation of materials (SISTM), solar based manufacturing, and solar pumped lasers. Researchers are also using sunlight to decontaminate water and soils polluted with organic compounds; these techniques could provide manufacturers with innovative alternatives to traditional methods of waste management. The solar technology that is now being integrated into today's manufacturing processes offer greater potential for tomorrow, especially as applied to the radiation abundant environment available in space and on the lunar surface.

  1. Effects of SiC Particle Size and Process Parameters on the Microstructure and Hardness of AZ91/SiC Composite Layer Fabricated by FSP

    NASA Astrophysics Data System (ADS)

    Asadi, P.; Givi, M. K. Besharati; Abrinia, K.; Taherishargh, M.; Salekrostam, R.

    2011-12-01

    In this study, friction stir processing (FSP) was employed to develop a composite layer on the surface of as-cast AZ91 magnesium alloy using SiC particles (5 μm and 30 nm). The effects of the rotational and traverse speeds and the FSP pass number on the microstructure and microhardness of the friction stir processed (FSPed) layer with and without SiC particles were investigated. Optical microscopy and scanning electron microscopy (SEM) were employed for microstructural analysis. FSP produces a homogeneous microstructure by eliminating the precipitates near the grain boundaries. The analyses showed that the effects of the rotational and traverse speeds on the microstructure of specimens produced without nano-sized SiC particles are considerable; however, they are negligible in the specimens with particles. While the second FSP pass enhances the microstructure and microhardness of the samples with SiC particles, it has no significant effect on such properties in the samples without SiC particles.

  2. Clean Energy Manufacturing Initiative

    SciTech Connect

    2013-04-01

    The initiative will strategically focus and rally EERE’s clean energy technology offices and Advanced Manufacturing Office around the urgent competitive opportunity for the United States to be the leader in the clean energy manufacturing industries and jobs of today and tomorrow.

  3. Computer Aided Manufacturing.

    ERIC Educational Resources Information Center

    Insolia, Gerard

    This document contains course outlines in computer-aided manufacturing developed for a business-industry technology resource center for firms in eastern Pennsylvania by Northampton Community College. The four units of the course cover the following: (1) introduction to computer-assisted design (CAD)/computer-assisted manufacturing (CAM); (2) CAM…

  4. Additive Manufactured Product Integrity

    NASA Technical Reports Server (NTRS)

    Waller, Jess; Wells, Doug; James, Steve; Nichols, Charles

    2017-01-01

    NASA is providing key leadership in an international effort linking NASA and non-NASA resources to speed adoption of additive manufacturing (AM) to meet NASA's mission goals. Participants include industry, NASA's space partners, other government agencies, standards organizations and academia. Nondestructive Evaluation (NDE) is identified as a universal need for all aspects of additive manufacturing.

  5. Manufacturing Education Curriculum Project.

    ERIC Educational Resources Information Center

    Umstattd, William D.

    The Manufacturing Education Curriculum Project's feasibility study concerned with industrial arts curriculum development in manufacturing for the senior high school level is described. The need for an industrial arts curriculum which meets and reflects present and future trends is discussed in the introduction, followed by a review of the…

  6. Heat pipe manufacturing study

    NASA Technical Reports Server (NTRS)

    Edelstein, F.

    1974-01-01

    Heat pipe manufacturing methods are examined with the goal of establishing cost effective procedures that will ultimately result in cheaper more reliable heat pipes. Those methods which are commonly used by all heat pipe manufacturers have been considered, including: (1) envelope and wick cleaning, (2) end closure and welding, (3) mechanical verification, (4) evacuation and charging, (5) working fluid purity, and (6) charge tube pinch off. The study is limited to moderate temperature aluminum and stainless steel heat pipes with ammonia, Freon-21 and methanol working fluids. Review and evaluation of available manufacturers techniques and procedures together with the results of specific manufacturing oriented tests have yielded a set of recommended cost-effective specifications which can be used by all manufacturers.

  7. Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper

    SciTech Connect

    Ding, Mengning; Star, Alexander

    2013-02-21

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na₂SiO₃) solution. The resulting “glassy buckypaper” was heated at 1300 - 1500 °C under Ar/H₂ to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  8. Grain boundary effects on defect production and mechanical properties of irradiated nanocrystalline SiC

    SciTech Connect

    Jin Enze; Niu Lisha; Lin Enqiang; Song Xiaoxiong

    2012-05-15

    Grain boundaries (GBs) are known to play an important role in determining the mechanical and functional properties of nanocrystalline materials. In this study, we used molecular dynamics simulations to investigate the effects of damaged GBs on the mechanical properties of SiC that is irradiated by 10 keV Si atoms. The results reveal that irradiation promotes GB sliding and reduces the ability of GBs to block dislocations, which improves the deformation ability of nanocrystalline SiC. However, irradiation causes local rearrangements in disordered clusters and pinning of dislocations in the grain region, which restrains its deformation. These two mechanisms arise from the irradiation effects on GBs and grains, and these mechanisms compete in nanocrystalline SiC during irradiation. The irradiation effects on GBs dominate at low irradiation doses, and the effects on grains dominate at high doses; the result of these combined effects is a peak ductility of 0.09 dpa in nanocrystalline SiC.

  9. Dr. Wernher Von Braun leads a tour of the S-IC checkout area.

    NASA Technical Reports Server (NTRS)

    1999-01-01

    Dr. Eberhard Rees, Charles Schultze, James Webb, Elmer Staats, Comptroller General of the United States, and Dr. Wernher Von Braun tour the S-IC checkout area in the Marshall Space Flight Center quality lab.

  10. Light and heavy element isotopic compositions of mainstream SiC grains.

    SciTech Connect

    Amari, S.; Clayton, R. N.; Davis, A. M.; Lewis, R. S.; Pellin, M. J.

    1999-02-03

    Although a variety of types of pre-solar SiC grains have been classified by their C, N, and Si isotopic composition, the majority of such grains are so-called mainstream grains and are believed to have come from asymptotic giant branch stars [1]. We have previously reported the Mo isotopic compositions of presolar SiC grains whose C, N, and Si isotopic compositions were not known [2]. Since most presolar SiC grains fall in the mainstream group, we assumed that these grains were mainstream. The excellent match of the Mo isotopic data with expectations for nucleosynthesis in AGB stars was consistent with this identification. In order to better understand the distribution of isotopic compositions in presolar grains, we have begun to measure heavy element isotopic compositions of presolar SiC grains of known C, N and Si isotopic composition.

  11. Precursor Selection for Property Optimization in Biomorphic SiC Ceramics

    NASA Technical Reports Server (NTRS)

    Varela-Feria, F. M.; Lopez-Robledo, M. J.; Martinez-Fernandez, J.; deArellano-Lopez, A. R.; Singh, M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Biomorphic SiC ceramics have been fabricated using different wood precursors. The evolution of volume, density and microstructure of the woods, carbon performs, and final SiC products are systematically studied in order to establish experimental guidelines that allow materials selection. The wood density is a critical characteristic, which results in a particular final SiC density, and the level of anisotropy in mechanical properties in directions parallel (axial) and perpendicular (radial) to the growth of the wood. The purpose of this work is to explore experimental laws that can help choose a type of wood as precursor for a final SiC product, with a given microstructure, density and level of anisotropy. Preliminary studies of physical properties suggest that not only mechanical properties are strongly anisotropic, but also electrical conductivity and gas permeability, which have great technological importance.

  12. Amorphization resistance of nano-engineered SiC under heavy ion irradiation

    DOE PAGES

    Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; ...

    2016-06-19

    Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

  13. Study of Compressive Strength of sic in Impact Experiments with Divergent Flow

    NASA Astrophysics Data System (ADS)

    Paris, V.; Frage, N.; Zaretsky, E.

    2009-12-01

    The axisymmetric divergent flow was generated in SiC samples by impact of convex copper flyer plates (radius of curvature ranging from 88 to 550 mm) having velocities from 550 to 700 m/s. The sample-window (sapphire) interface velocities or the velocities of the free surface of the nickel witness plate were continuously monitored by VISAR. The maximum shear stress achieved under different confining stress just prior to the sample failure is associated with the compressive failure threshold of the SiC. Both the compressive failure threshold of SiC and the parameters of its inelastic deformation were found by matching the results of the AUTODYN-2D numerical simulation with the experimentally obtained waveforms. The compressive failure threshold of SiC is characterized by a transition from brittle-like behavior below the confining stress of 1.4-1.5 GPa to the ductile-like one at higher confining stress.

  14. Study of Compressive Strength of SiC In Impact Experiments with Divergent Flow

    NASA Astrophysics Data System (ADS)

    Paris, Vitaly; Frage, Naum; Zaretsky, Eugene

    2009-06-01

    The axisymmetric divergent flow was generated in SiC specimens by impact of spherical (radius of curvature ranging from 170 to 550 mm) copper impactors having velocities 550 to 700 m/s. The specimen-window (sapphire) interface velocities or the velocities of the free surface of the nickel witness plate were continuously monitored by VISAR. The maximum, just prior to the failure, shear stress values achieved in the SiC under different confining stresses are associated with the failure threshold of the material. Both the compressive failure threshold of SiC and the parameters of its inelastic deformation were found by matching the results of the AUTODYN numerical simulation to the experimentally obtained waveforms. The compressive failure threshold of SiC is characterized by a transition from apparently pressure-dependent behavior below the confining stress equal to 1.5 GPa to a pressure-independent behavior at higher confining stresses.

  15. Toxicity assessment of SiC nanofibers and nanorods against bacteria.

    PubMed

    Szala, Mateusz; Borkowski, Andrzej

    2014-02-01

    In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria.

  16. Synthesis of one-dimensional SiC nanostructures from a glassy buckypaper.

    PubMed

    Ding, Mengning; Star, Alexander

    2013-03-01

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures-nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na2SiO3) solution. The resulting "glassy buckypaper" was heated at 1300-1500 °C under Ar/H2 to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy-dispersive X-ray spectroscopy (EDX), electron diffraction (ED), and X-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  17. Highly flexible, nonflammable and free-standing SiC nanowire paper

    NASA Astrophysics Data System (ADS)

    Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

    2015-03-01

    Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber

  18. Amorphization resistance of nano-engineered SiC under heavy ion irradiation

    SciTech Connect

    Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

    2016-06-19

    Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

  19. Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

    NASA Astrophysics Data System (ADS)

    He, Guowei; Srivastava, N.; Feenstra, R. M.

    2014-04-01

    Graphene films prepared by heating the SiC surface (the C-face of the {0001} surface) in a Si-rich environment have been studied using low-energy electron diffraction (LEED) and low-energy electron microscopy. Upon graphitization, an interface with symmetry is observed by in situ LEED. After oxidation, the interface displays symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like "buffer layer" that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si2O3) layer, with the silicate layer having the well-known structure as previously studied on bare SiC surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.

  20. Selective Growth of Graphene by Pulsed Laser Annealing Ion Implanted SiC

    NASA Astrophysics Data System (ADS)

    Berke, Kara; Wang, Xiaotie; Rudawski, Nick; Venkatachalam, Dinesh; Fridmann, Joel; Gila, Brent; Ren, Fan; Elliman, Rob; Hebard, Arthur; Appleton, Bill

    2014-03-01

    We report a method for site-selective graphene growth on SiC for direct nano-scale patterning of graphene. Crystalline SiC was implanted with Si and C ions to amorphize the sample surface, then subjected to pulsed laser annealing (PLA); graphene growth occurred only where ions were implanted. PLA parameters including the fluence, number of pulses, and annealing environment were investigated to optimize the growth process. Our previous work involving Au, Cu, and Ge implants in SiC suggested that both the implanted species and surface amorphization affect graphene growth. In this work, we show that surface amorphization alone, without the presence of foreign ionic species, can be used with PLA to create site-selective graphene growth on SiC. Samples were characterized using Raman spectroscopy and cross-sectional transmission electron microscopy. also affiliated with Raith USA, Incorporated.

  1. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    SciTech Connect

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  2. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  3. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... engaged in furnishing services for direct mail advertising including Address list compilers, Address list... under SIC 7331, Direct Mail Advertising Services (mailing list compilers)); 511191Greeting Card... web search portals; 541712Research and Development in the Physical, Engineering, and Life...

  4. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    SciTech Connect

    Whitaker, Mr. Bret; Cole, Mr. Zach; Passmore, Mr. Brandon; Mcnutt, Tyler; Lostetter, Dr. Alex; Ericson, Milton Nance; Frank, Steven; Britton Jr, Charles L; Marlino, Laura D; Mantooth, Alan; Francis, Matt; Lamichhane, Ranjan; Shepherd, Paul; Glover, Michael

    2014-01-01

    This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.

  5. Development of Gate and Base Drive Using SiC Junction Field Effect Transistors

    DTIC Science & Technology

    2008-05-01

    Development of Gate and Base Drive Using SiC Junction Field Effect Transistors by Timothy E. Griffin ARL-TR-4475 May 2008...Development of Gate and Base Drive Using SiC Junction Field Effect Transistors Timothy E. Griffin Sensors and Electron Devices...Effect Transistors 5c. PROGRAM ELEMENT NUMBER 5d. PROJECT NUMBER 5e. TASK NUMBER 6. AUTHOR(S) Timothy E. Griffin 5f. WORK UNIT NUMBER

  6. SiC Armor Tiles via Magnetic Compaction and Pressureless Sintering

    DTIC Science & Technology

    2008-01-27

    Ceramatec, ORNL ,ARMY and UDRI Unclassified 7Cocoa Beach 2008 What is Dynamic Magnetic Compaction? Dynamic Kinetic process High compaction pressure for sub...1Cocoa Beach 2008 SiC Armor Tiles via Magnetic Compaction and Pressureless Sintering B. Chelluri, and E. A. Knoth, IAP Research, Inc. L. P. Franks...TITLE AND SUBTITLE SiC Armor Tiles via Magnetic Compaction and Pressureless Sintering 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER

  7. Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)

    DTIC Science & Technology

    2013-11-19

    Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001) Jonathan D. Emery,1 Blanka Detlefs,2 Hunter J. Karmel,1 Luke O. Nyakiti,3...unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the...interface strongly influences the electronic properties of the overlaying graphene . We demonstrate a novel combination of x-ray scattering and spectroscopy

  8. Effect of deposition temperature on the properties of pyrolytic SiC

    NASA Astrophysics Data System (ADS)

    Xu, S. J.; Zhou, J. G.; Yang, B.; Zhang, B. Z.

    1995-07-01

    TRISO-coated fuel particles have been chosen for the fuel of our 10 MW HTR experimental reactor. SiC is the key component of the coatings for TRISO coated particles. In the present work, the study of the effect of the deposition temperature on the density, surface morphology, fracture surface structure, strength and Young's modulus of the deposited SiC is reported.

  9. Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC)

    DTIC Science & Technology

    2014-03-01

    Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC) by Jacqueline T. Le and Shane D. Bartus ARL-TR-6861 March...Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC) Jacqueline T. Le George Washington University Shane D...5a. CONTRACT NUMBER W911NF-10-2-0076 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Jacqueline T. Le * and Shane D. Bartus 5d

  10. Modeling the Elastic Modulus of 2D Woven CVI SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.

    2006-01-01

    The use of fiber, interphase, CVI SiC minicomposites as structural elements for 2D-woven SiC fiber reinforced chemically vapor infiltrated (CVI) SiC matrix composites is demonstrated to be a viable approach to model the elastic modulus of these composite systems when tensile loaded in an orthogonal direction. The 0deg (loading direction) and 90deg (perpendicular to loading direction) oriented minicomposites as well as the open porosity and excess SiC associated with CVI SiC composites were all modeled as parallel elements using simple Rule of Mixtures techniques. Excellent agreement for a variety of 2D woven Hi-Nicalon(TradeMark) fiber-reinforced and Sylramic-iBN reinforced CVI SiC matrix composites that differed in numbers of plies, constituent content, thickness, density, and number of woven tows in either direction (i.e, balanced weaves versus unbalanced weaves) was achieved. It was found that elastic modulus was not only dependent on constituent content, but also the degree to which 90deg minicomposites carried load. This depended on the degree of interaction between 90deg and 0deg minicomposites which was quantified to some extent by composite density. The relationships developed here for elastic modulus only necessitated the knowledge of the fractional contents of fiber, interphase and CVI SiC as well as the tow size and shape. It was concluded that such relationships are fairly robust for orthogonally loaded 2D woven CVI SiC composite system and can be implemented by ceramic matrix composite component modelers and designers for modeling the local stiffness in simple or complex parts fabricated with variable constituent contents.

  11. SiC growth by Solvent-Laser Heated Floating Zone

    NASA Technical Reports Server (NTRS)

    Woodworth, Andrew A.; Neudeck, Philip G.; Sayir, Ali; Spry, David J.; Trunek, Andrew J.; Powell, J. Anthony

    2011-01-01

    In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes: source material, laser heating, and analysis of the first ever Solvent-LHFZ SiC crystals (synchrotron white beam x-ray topography confirmed).

  12. Microwave-assisted pyrolysis of SiC and its application to joining

    SciTech Connect

    Ahmad, I.; Silberglitt, R.; Shan, T.A.

    1995-07-01

    Microwave energy has been used to pyrolyze silicon carbide from commercially available polycarbosilane precursor. The pyrolysis was performed on SiC surfaces having various surface treatments, to identify conditions which improve the wetting and adherence. Grinding and etching of the surfaces in hydrofluoric (HF) acid promotes the bonding of precursor derived ceramic to the SiC ceramic. Finally, the polycarbosilane precursor mixed with fine silicon carbide powder was used as the interlayer material to join silicon carbide specimens.

  13. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    SciTech Connect

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V.

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  14. Resistance switching in a SiC nanowire/Au nanoparticle network

    NASA Astrophysics Data System (ADS)

    Mori, Y.; Kohno, H.

    2009-07-01

    Resistance switching in a semiconductor nanowire/metal nanoparticle system is demonstrated. SiC nanowires grown on a Si substrate and decorated with Au nanoparticles are measured using W microprobes in a scanning electron microscope, where one probe is grounded and the other is biased. HIGH and LOW states can be toggled by applying a negative or positive pulse voltage. The switching mechanism is attributed to a charge transfer between the SiC nanowires and the Au nanoparticles.

  15. Ultra-Low-Cost Room Temperature SiC Thin Films

    NASA Technical Reports Server (NTRS)

    Faur, Maria

    1997-01-01

    The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

  16. Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

    SciTech Connect

    Ikeda, Akihiro; Nishi, Koji; Ikenoue, Hiroshi; Asano, Tanemasa

    2013-02-04

    Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 10{sup 20}/cm{sup 3} without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

  17. Evaluation of surface recombination of SiC for development of bipolar devices

    NASA Astrophysics Data System (ADS)

    Kato, Masashi

    2016-09-01

    Ultra-high voltage power devices are employed for management of power networks. Si-based semiconductor devices have been developed for such the power devices. Maximum breakdown voltages of Si devices are of the order of kV. When the voltage in the power network was higher than the breakdown voltage of the devices, the devices were connected in series. The series connection introduces high resistance and power loss. To overcome this series resistance problem, it has been suggested that utilization of silicon carbide (SiC) devices. SiC has much higher breakdown electric field than Si, and thus high voltage in the power networks can be managed by SiC device without the series connection. Therefore, development of ultra-high voltage SiC device will decrease resistance and power loss in the power networks. However, there are several difficulties to develop ultra-high voltage SiC devices. One of the difficulties is control of the carrier lifetime. In fact, ultra-high voltage devices are fabricated with bipolar structure, and, in the bipolar devices, the carrier lifetime is highly influential on resistance and power loss. The carrier lifetime is limited by several factors, and one of the most important factors is the surface recombination. Therefore, evaluation and control of the surface recombination is essential to develop ultra-high voltage SiC devices. In this paper, we will report evaluation techniques for the surface recombination of SiC. In addition, dependence of the surface recombination on surface treatments, crystal faces and temperature are shown. The evaluated surface recombination velocities will support development of ultra-high voltage SiC devices.

  18. Effect of Ductile Agents on the Dynamic Behavior of SiC3D Network Composites

    NASA Astrophysics Data System (ADS)

    Zhu, Jingbo; Wang, Yangwei; Wang, Fuchi; Fan, Qunbo

    2016-10-01

    Co-continuous SiC ceramic composites using pure aluminum, epoxy, and polyurethane (PU) as ductile agents were developed. The dynamic mechanical behavior and failure mechanisms were investigated experimentally using the split Hopkinson pressure bar (SHPB) method and computationally by finite element (FE) simulations. The results show that the SiC3D/Al composite has the best overall performance in comparison with SiC3D/epoxy and SiC3D/PU composites. FE simulations are generally consistent with experimental data. These simulations provide valuable help in predicting mechanical strength and in interpreting the experimental results and failure mechanisms. They may be combined with micrographs for fracture characterizations of the composites. We found that interactions between the SiC phase and ductile agents under dynamic compression in the SHPB method are complex, and that interfacial condition is an important parameter that determines the mechanical response of SiC3D composites with a characteristic interlocking structure during dynamic compression. However, the effect of the mechanical properties of ductile agents on dynamic behavior of the composites is a second consideration in the production of the composites.

  19. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    SciTech Connect

    Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L; Ning, Puqi; White, Cliff P; Miller , John M.

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at three center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.

  20. Mechanical Properties and Elastic Constants Due to Damage Accumulation and Amorphization in SiC

    SciTech Connect

    Gao, Fei; Weber, William J.

    2004-06-28

    Damage accumulation due to cascade overlap, which was simulated previously, has been used to study the changes of elastic constants, bulk and elastic moduli as a function of dose. These mechanical properties generally decrease with increasing dose, and the rapid decrease at low-dose level indicates that point defects and small clusters play an important role in the changes of elastic constants rather than topological disorder. The internal strain relaxation has no effect on the elastic constants, C11 and C12, in perfect SiC, but it has a significant influence on all elastic constants calculated in damaged SiC. The elastic constants in the cascade-amorphized (CA) SiC decrease about 19%, 29% and 46% for C11, C12 and C44, respectively. The bulk modulus decrease 23% and the elastic modulus decreases 29%, which is consistent with experimental measurements. The stability of both the perfect SiC and CA-SiC under hydrostatic tension has been also investigated. All mechanical properties in the CA-SiC exhibit behavior similar to that in perfect SiC, but the critical stress at which the CA-SiC becomes structurally unstable is one order of magnitude smaller than that for perfect SiC.

  1. Packaging Technologies for 500C SiC Electronics and Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  2. Modeling and testing miniature torsion specimens for SiC joining development studies for fusion

    DOE PAGES

    Henager, Jr., C. H.; Nguyen, Ba N.; Kurtz, Richard J.; ...

    2015-08-05

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. For this research, miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects. Finite elementmore » elastic damage and elastic–plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. Finally, the implications for joint data based on this sample design are discussed.« less

  3. Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

    PubMed

    Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-04-05

    The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

  4. Sizing SiC Storage Inverters for Fast Grid Frequency Support

    SciTech Connect

    Hoke, Anderson; Bennion, Kevin; Gevorgian, Vahan; Chakraborty, Sudipta; Muljadi, Eduard

    2015-11-02

    As wind and solar displace synchronous generators whose inertia stabilizes the AC grid frequency on fast time scales, it has been proposed to use energy storage systems (ESSs) to mitigate frequency transient events. Such events require a rapid surge of power from the ESS, but they occur only rarely. The high temperature tolerance of SiC MOSFETs and diodes presents an opportunity for innovative ESS inverter designs. Herein we investigate a SiC ESS inverter design such that the SiC device ratings are obeyed during mild frequency events but are exceeded during rare, major events, for a potentially more economical inverter design. In support of this proposal we present: 1. An analysis of four years of grid frequency events in the U.S. Western Interconnection. 2. A switch-level ESS inverter simulation using SiC devices with detailed loss estimates. 3. Thermal analysis of the SiC power modules during a worst-case frequency event, showing that the modules can likely withstand the brief overcurrent. This analysis supports the conclusion that it may be advantageous for economical designs (acknowledging the increased risks) to undersize the SiC switches when designing inverters to perform active power control for grid frequency support. Such a strategy may result in SiC-based designs being more competitive with less costly silicon IGBT-based designs.

  5. Modeling and testing miniature torsion specimens for SiC joining development studies for fusion

    NASA Astrophysics Data System (ADS)

    Henager, C. H.; Nguyen, B. N.; Kurtz, R. J.; Roosendaal, T. J.; Borlaug, B. A.; Ferraris, M.; Ventrella, A.; Katoh, Y.

    2015-11-01

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.

  6. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    SciTech Connect

    George W. Griffith

    2011-10-01

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows for ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.

  7. Elaboration and characterization of luminescent porous SiC microparticles/poly vinyl alcohol thin films

    NASA Astrophysics Data System (ADS)

    Kaci, S.; Mansouri, H.; Bozetine, I.; Keffous, A.; Guerbous, L.; Siahmed, Y.; Aissiou, S.

    2017-02-01

    In this study, Morphological, optical and photoluminescence characterizations of nanostructured SiC micropowder embedded in PVA matrix and deposited as thin films on glass substrates are reported. we prepared the porous SiC microparticles/PVA thin films by spin coating method. The average size of SiC microparticles were 7 μm. An electroless method was used for producing porous silicon carbide powder under UV irradiation. Silver nanoparticles coated SiC powder was formed by polyol process. The etchant was composed of aqueous HF and different oxidants. Various porous morphologies were obtained and studied as a function of oxidant type, etching time, and wavelength of irradiation. We concluded that the chemical etching conditions of SiC powder seems to have a large impact on the resulting properties. We noticed that the best photoluminescence property was achieved when SiC powder was etched in HF/K2S2O8 at reaction temperature of 80 °C for t = 40min and under UV light of 254 nm.

  8. The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

    NASA Astrophysics Data System (ADS)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

    2015-11-01

    Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

  9. Si/C hybrid nanostructures for Li-ion anodes: An overview

    NASA Astrophysics Data System (ADS)

    Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

    2014-01-01

    This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

  10. Synthesis and characterization of Ti(3)SiC(2)

    NASA Astrophysics Data System (ADS)

    El-Raghy, Tamer Saad

    For the first time, bulk, single phase, fully dense Tisb3SiCsb2 samples were fabricated by hot pressing or hot isostatic pressing of Ti, SiC, and C powders. This compound is as readily machinable as graphite, has a Young's modulus of 325 GPa and a hardness of 4 GPa. Its electrical conductivity is 4.5×10sp6\\ Omegasp{-1}\\ msp{-1}. The thermal expansion coefficient in the temperature range 25 to 1000sp°C, the room temperature thermal conductivity, and heat capacity are, respectively, 9.2×10sp{-6}\\ sp° Csp{-1}, 43 W/m.K and 588 J/kg K. By controlling the process, the final grain size fabricated was fine (3-5 mum) or coarse (100-200 mum). For both microstructures the failure is brittle at room temperature, but above 1200sp°C the failure is ductile. At 1300sp°C, both microstructures exhibited high levels of plasticity (>20%). Both the fine and the coarse grained materials were found to be damage tolerant. Although the coarse grains material is not susceptible to thermal shock up to 1400sp°C, the fine grains material was found to thermal shock between 750 and 1000sp°C. Oriented macro-grains (1-4 mm) of Tisb3SiCsb2 were fabricated to study the deformation mechanism. We have shown conclusively that there is an active slip system (across the basal planes) at room temperature which results in the room temperature plasticity. It was found that grain buckling and cavities formation are two mechanisms by which the material accommodates the strain. The oxidation was parabolic with parabolic rate constants, ksb{p}, that increased from 1×10sp{-9} to 1×10sp{-4}\\ kgsp2msp{-4}ssp{-1} as the temperature increased from 900 to 1400sp°C, respectively, which yielded an activation energy of 370 ± 20 kJ/mol. The scale that forms was dense, adhesive, resistant to thermal cycling and layered. Carburization, nitridation and siliconization resulted in the formation of, respectively, TiCsb{x}, TiN-TiCsb{x}-SiC and TiSisb2-SiC surface layers. In general the surface treatments

  11. Rapid small lot manufacturing

    SciTech Connect

    Harrigan, R.W.

    1998-05-09

    The direct connection of information, captured in forms such as CAD databases, to the factory floor is enabling a revolution in manufacturing. Rapid response to very dynamic market conditions is becoming the norm rather than the exception. In order to provide economical rapid fabrication of small numbers of variable products, one must design with manufacturing constraints in mind. In addition, flexible manufacturing systems must be programmed automatically to reduce the time for product change over in the factory and eliminate human errors. Sensor based machine control is needed to adapt idealized, model based machine programs to uncontrolled variables such as the condition of raw materials and fabrication tolerances.

  12. Exciton-polariton state in nanocrystalline SiC films

    NASA Astrophysics Data System (ADS)

    Semenov, A. V.; Lopin, A. V.

    2016-05-01

    We studied the features of optical absorption in the films of nanocrystalline SiC (nc-SiC) obtained on the sapphire substrates by the method of direct ion deposition. The optical absorption spectra of the films with a thickness less than ~500 nm contain a maximum which position and intensity depend on the structure and thickness of the nc-SiC films. The most intense peak at 2.36 eV is observed in the nc-SiC film with predominant 3C-SiC polytype structure and a thickness of 392 nm. Proposed is a resonance absorption model based on excitation of exciton polaritons in a microcavity. In the latter, under the conditions of resonance, there occurs strong interaction between photon modes of light with λph=521 nm and exciton of the 3С polytype with an excitation energy of 2.36 eV that results in the formation of polariton. A mismatch of the frequencies of photon modes of the cavity and exciton explains the dependence of the maximum of the optical absorption on the film thickness.

  13. SiC Die Attach for High-Temperature Applications

    NASA Astrophysics Data System (ADS)

    Drevin-Bazin, A.; Lacroix, F.; Barbot, J.-F.

    2013-11-01

    Eutectic solders AuIn19 and AuGe12 and nanosilver paste were investigated for SiC die attach in high-temperature (300°C) applications. The soldering or sintering conditions were optimized through die shear tests performed at room temperature. In particular, application of static pressure (3.5 MPa) during sintering resulted in greatly improved mechanical behavior of the nanosilver-based joint. Microstructural study of the eutectic solders showed formation of Au-rich grains in AuGe die attach and significant diffusion of Au and In through the Ni layer in AuIn19 die attach, which could lead to formation of intermetallic compounds. Die shear tests versus temperature showed that the behaviors of the studied die attaches are different; nevertheless they present suitable shear strengths required for high-temperature applications. The mechanical behavior of joints under various levels of thermal and mechanical stress was also studied. Creep experiments were carried out on the eutectic solders to describe the thermomechanical behavior of the complete module; only one creep mechanism was observed in the working range.

  14. Amplifiers dedicated for large area SiC photodiodes

    NASA Astrophysics Data System (ADS)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  15. Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC

    SciTech Connect

    Szász, K.; Gali, A.

    2014-02-21

    Motivated by recent experimental findings on the hyperfine signal of nitrogen donor (N{sub C}) in 4 H and 6 H SiC, we calculate the hyperfine tensors within the framework of density functional theory. We find that there is negligible hyperfine coupling with {sup 29}Si isotopes when N{sub C} resides at h site both in 4 H and 6 H SiC. We observe measurable hyperfine coupling to a single {sup 29}Si at k site in 4 H SiC and k{sub 1} site in 6 H SiC. Our calculations unravel that such {sup 29}Si hyperfine coupling does not occur at k{sub 2} site in 6 H SiC. Our findings are well corroborated by our new electron paramagnetic resonance studies in nitrogen doped 6 H SiC.

  16. 75 FR 30781 - Manufacturing Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-02

    ... International Trade Administration Manufacturing Council AGENCY: International Trade Administration, U.S... Manufacturing Council. SUMMARY: On March 16, 2010, the Department of Commerce's International Trade... the Manufacturing Council (Council). The March 16, 2010 notice provided that all applications must...

  17. 75 FR 80040 - Manufacturing Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-21

    ... International Trade Administration Manufacturing Council AGENCY: International Trade Administration, U.S... Manufacturing Council. SUMMARY: On November 23, 2010, the Department of Commerce's International Trade... vacant position on the Manufacturing Council (Council). The November 23, 2010 notice provided that...

  18. Agile manufacturing concept

    NASA Astrophysics Data System (ADS)

    Goldman, Steven L.

    1994-03-01

    The initial conceptualization of agile manufacturing was the result of a 1991 study -- chaired by Lehigh Professor Roger N. Nagel and California-based entrepreneur Rick Dove, President of Paradigm Shifts, International -- of what it would take for U.S. industry to regain global manufacturing competitiveness by the early twenty-first century. This industry-led study, reviewed by senior management at over 100 companies before its release, concluded that incremental improvement of the current system of manufacturing would not be enough to be competitive in today's global marketplace. Computer-based information and production technologies that were becoming available to industry opened up the possibility of an altogether new system of manufacturing, one that would be characterized by a distinctive integration of people and technologies; of management and labor; of customers, producers, suppliers, and society.

  19. Computers in Manufacturing.

    ERIC Educational Resources Information Center

    Hudson, C. A.

    1982-01-01

    Advances in factory computerization (computer-aided design and computer-aided manufacturing) are reviewed, including discussions of robotics, human factors engineering, and the sociological impact of automation. (JN)

  20. Human Issues in Manufacturing Technology

    DTIC Science & Technology

    1992-09-01

    conventional mass- production manufacturing and the benefits of lean manufacturing . The text details the results of a five-year, multi national study...data and comparisons between mass and lean manufacturing . The key objective is to "illustrate the transition from mass to lean production with...of reference for the transition from current manufacturing systems to the goal state of lean manufacturing . Manufacturing before change is referred to

  1. Manufacturing information system

    NASA Astrophysics Data System (ADS)

    Allen, D. K.; Smith, P. R.; Smart, M. J.

    1983-12-01

    The size and cost of manufacturing equipment has made it extremely difficult to perform realistic modeling and simulation of the manufacturing process in university research laboratories. Likewise the size and cost factors, coupled with many uncontrolled variables of the production situation has even made it difficult to perform adequate manufacturing research in the industrial setting. Only the largest companies can afford manufacturing research laboratories; research results are often held proprietary and seldom find their way into the university classroom to aid in education and training of new manufacturing engineers. It is the purpose for this research to continue the development of miniature prototype equipment suitable for use in an integrated CAD/CAM Laboratory. The equipment being developed is capable of actually performing production operations (e.g. drilling, milling, turning, punching, etc.) on metallic and non-metallic workpieces. The integrated CAD/CAM Mini-Lab is integrating high resolution, computer graphics, parametric design, parametric N/C parts programmings, CNC machine control, automated storage and retrieval, with robotics materials handling. The availability of miniature CAD/CAM laboratory equipment will provide the basis for intensive laboratory research on manufacturing information systems.

  2. Matrix-grain-bridging contributions to the toughness of SiC composites with alumina-coated SiC platelets

    SciTech Connect

    Cao, J.J.; He, Y.; MoberlyChan, W.J.; De Jonghe, L.C. |

    1996-05-01

    Silicon carbide composites were fabricated through the incorporation of alumina-coated SiC platelets into a SiC matrix. Mechanical properties were evaluated in direct comparison with a commercial Hexoloy SiC. The fracture toughness of the composite, with a fine grained {beta}-SiC matrix, was twice that of the commercial material. The alumina-coating on the platelets provided a weak interface to promote crack deflection and platelet bridging, as well as easing densification of the composites. On the other hand, a three-fold increase in fracture toughness (9.1 MPa {radical}m) of an in situ toughened monolithic SiC was achieved by processing at higher temperatures, promoting the {beta}-to-{alpha} phase transformation and forming a microstructure containing high-aspect-ration plate-shaped grains. Efforts were made to combine the effects of coated-platelets reinforcement and in situ toughening in the matrix. Moderate high toughness (8 MPa {radical}m) was achieved by coupled toughening. The contribution of matrix-grain-bridging, however, was limited by the processing temperature at which the oxide coating was stable.

  3. Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2

    SciTech Connect

    Jiang, Weilin; Henager, Charles H.; Varga, Tamas; Jung, Hee Joon; Overman, Nicole R.; Zhang, Chonghong; Gou, Jie

    2015-05-16

    MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been considered as a possible fuel cladding material. This study reports on the diffusivities of fission product surrogates (Ag and Cs) and a noble metal Au (with diffusion behavior similar to Ag) in this ternary compound at elevated temperatures, as well as in dual-phase nanocomposite of Ti3SiC2/3C-SiC and polycrystalline CVD 3C-SiC for behavior comparisons. Samples were implanted with Ag, Au or Cs ions and characterized with various methods, including x-ray diffraction, electron backscatter diffraction, energy dispersive x-ray spectroscopy, Rutherford backscattering spectrometry, helium ion microscopy, and transmission electron microscopy. The results show that in contrast to immobile Ag in 3C-SiC, there is a significant outward diffusion of Ag in Ti3SiC2 within the dual-phase nanocomposite during Ag ion implantation at 873 K. Similar behavior of Au in polycrystalline Ti3SiC2 was also observed. Cs out-diffusion and release from Ti3SiC2 occurred during post-implantation thermal annealing at 973 K. This study suggests caution and further studies in consideration of Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures.

  4. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  5. Effect of SiC particles on microarc oxidation process of magnesium matrix composites

    NASA Astrophysics Data System (ADS)

    Wang, Y. Q.; Wang, X. J.; Gong, W. X.; Wu, K.; Wang, F. H.

    2013-10-01

    SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiCp/AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage-time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO2 before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO2 by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiCp/AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

  6. The benefits and current progress of SiC SGTOs for pulsed power applications

    NASA Astrophysics Data System (ADS)

    Ogunniyi, Aderinto; O'Brien, Heather; Lelis, Aivars; Scozzie, Charles; Shaheen, William; Agarwal, Anant; Zhang, Jon; Callanan, Robert; Temple, Victor

    2010-10-01

    Silicon Carbide (SiC) is an extremely attractive material for semiconductor power devices because of its electrical and physical characteristics. This paper describes the benefits of utilizing SiC Super Gate Turn-Off thyristors (SGTO) in pulsed power applications, reviews the current progress and development of SiC GTOs, and presents the static and pulsed characteristics of large area GTOs with high blocking capabilities. The wide pulsed evaluation of the 0.5 cm 2 SiC SGTOs has been demonstrated and reported by the Army Research Laboratory (ARL). This paper presents the wide pulsed capabilities of the 1 cm 2 SiC SGTOs. The 1 cm 2 SiC SGTO devices handled up to twice the peak current of the 0.5 cm 2 SiC SGTOs at a 1 ms pulse width. The wide pulsed evaluation of these devices was demonstrated at ARL. ARL evaluated the static and pulsed characteristics of six of these devices. The devices had a forward blocking voltage rating of 9 kV and a trigger requirement of a negative pulse of 1 A to the gate for a millisecond pulse width. These devices were pulsed as high as 3.5 kA at 1 ms, equating to an action rate of 6 × 10 3 A 2 s and a current density of 4.8 kA/cm 2, based on the device active area. The narrow pulsed evaluation of this device has been demonstrated by Cree Inc. A peak current of 12.8 kA with a pulse width of 17 μs (corresponding to 12.8 kA/cm 2 based on the chip size) was conducted with this device.

  7. Chemical reactions of atomic hydrogen at SiC surface and heterogeneous chemiluminescence

    NASA Astrophysics Data System (ADS)

    Styrov, V. V.; Tyutyunnikov, V. I.; Sergeev, O. T.; Oya, Y.; Okuno, K.

    2005-02-01

    In studies of the surface properties of SiC polytypes and chemical reactions of hydrogen atoms at SiC surfaces the surface (chemi)luminescence of SiC has been applied excited in the reaction of hydrogen atoms due to chemical energy released (heterogeneous chemiluminescence, HCL). The bulk photoluminescence (PL) have also been used for comparison with surface HCL. All the samples showed HCL, but only α-SiC (6H, 15R), technologically or specially doped (predominantly by N, B, Al), exhibited PL (λex=365 nm). Cubic polycrystalline β-SiC (or 3C SiC) did not show PL. The general luminescence band of α-SiC (6H, 15R) and B and Al doped SiC (6H) was a broad yellow band with λmax ranged from 620 to 650 nm for PL (110 K). Another less intensive luminescence band is a blue one, which has been observed only at low temperatures for α-SiC (6H,15R) and B and Al doped SiC (6H) in PL spectra and as a shoulder in HCL spectra (λmax=477 nm at 110 K for 15R SiC). The green band near 540 nm was also observed sometimes in PL spectra for α-SiC. The heat of adsorption of hydrogen atoms at polycrystalline β-SiC estimated from HCL data was found to be in the range from 2 to 3 eV.

  8. Wear Behaviour of Al-6061/SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

    2016-06-01

    Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

  9. Experimental Investigation of Mechanical and Thermal properties of sisal fibre reinforced composite and effect of sic filler material

    NASA Astrophysics Data System (ADS)

    Surya Teja, Malla; Ramana, M. V.; Sriramulu, D.; Rao, C. J.

    2016-09-01

    With a view of exploring the potential use of natural recourses, we made an attempt to fabricate sisal fibre polymer composites by hand lay-up method. Natural fiber composites are renewable, cheap and biodegradable. Their easy availability, lower density, higher specific properties, lower cost, satisfactory mechanical and thermal properties, non-corrosive nature, makes them an attractive ecological alternative to glass, carbon or other man-made synthetic fibers. In this work, the effect of SiC on mechanical and thermal properties of natural sisal fiber composites are investigated. The composite has been made with and without SiC incorporating natural sisal fiber with polyester as bonding material. The experimental outcomes exhibited that the tensile strength of composite with 10%SiC 2.53 times greater than that of composite without SiC. The impact strength of composite with 10% SiC is 1.73 times greater than that of composite without SiC plain polyester. Thermal properties studied include thermal conductivity, specific heat capacity, thermal diffusivity, thermal degradation and stability. Three different samples with 0%, 5%, 10% SiC powder are considered. With the addition of SiC filler powder, thermal conductivity increases, specific heat capacity gradually increases then decreases, thermal diffusivity increases and thermal stability improves with Sic powder.

  10. Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; Hebsur, Mohan G.

    2000-01-01

    Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

  11. Fabrication of protective-coated SiC reinforced tungsten matrix composites with reduced reaction phases by spark plasma sintering

    NASA Astrophysics Data System (ADS)

    Umer, Malik Adeel; Lee, Dongju; Waseem, Owais Ahmed; Ryu, Ho Jin; Hong, Soon Hyung

    2016-05-01

    SiC reinforced tungsten matrix composites were fabricated via the spark plasma sintering process. In order to prevent an interfacial reaction between the SiC and tungsten during sintering, TiOx coated SiC particles were synthesized by a solution-based process. TiOx layer coated SiC particles were treated in high temperature nitriding conditions or annealed in a high temperature vacuum to form TiN or TiC coated SiC particles, respectively. The TiC layers coated on SiC particles successfully prevented tungsten from reacting with SiC; hence the proposed process resulted in successful fabrication of the SiC/W composites. The mechanical properties such as compressive strength and flexural strength of the composites were measured. Additionally, the effect of SiC on the high temperature oxidative ablation of tungsten was also investigated. The addition of SiC resulted in an improved oxidative ablation resistance of the tungsten-based composites.

  12. Oxidation of SiC Fiber-Reinforced SiC Matrix Composites with a BN Interphase

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth; Boyd, Meredith K.

    2010-01-01

    SiC-fiber reinforced SiC matrix composites with a BN interphase were oxidized in reduced oxygen partial pressures of oxygen to simulate the environment for hypersonic vehicle leading edge applications. The constituent fibers as well as composite coupons were oxidized in oxygen partial pressures ranging from 1000 ppm O2 to 5% O2 balance argon. Exposure temperatures ranged from 816 C to 1353 C (1500 F to 2450 F). The oxidation kinetics of the coated fibers were monitored by thermogravimetric analysis (TGA). An initial rapid transient weight gain was observed followed by parabolic kinetics. Possible mechanisms for the transient oxidation are discussed. One edge of the composite coupon seal coat was ground off to simulate damage to the composite which allowed oxygen ingress to the interior of the composite. Oxidation kinetics of the coupons were characterized by scanning electron microscopy since the weight changes were minimal. It was found that sealing of the coupon edge by silica formation occurred. Differences in the amount and morphology of the sealing silica as a function of time, temperature and oxygen partial pressure are discussed. Implications for use of these materials for hypersonic vehicle leading edge materials are summarized.

  13. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    SciTech Connect

    Whitaker, Mr. Bret; Cole, Mr. Zach; Passmore, Mr. Brandon; Martin, Daniel; Mcnutt, Tyler; Lostetter, Dr. Alex; Ericson, Milton Nance; Frank, Steven Shane; Britton Jr, Charles L; Marlino, Laura D; Mantooth, Alan; Francis, Dr. Matt; Lamichhane, Ranjan; Shepherd, Dr. Paul; Glover, Dr. Michael

    2014-01-01

    This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

  14. National Center for Manufacturing Sciences: Environmentally conscious manufacturing

    NASA Technical Reports Server (NTRS)

    Vinton, Clare

    1995-01-01

    The purpose of this presentation is to share the results and some of the thinking of the Environmentally Conscious Manufacturing - Strategic Initiative Group (ECM-SIG) at the National Center for Manufacturing Sciences (NCMS). NCMS is a consortium of more than 185 North American Manufacturing organizations comprised of about 75 percent for profit manufacturing companies and about 25 percent nonprofit organizations that support manufacturing activities. NCMS conducts collaborative R&D programs designed to improve global competitiveness of its members and other North American manufacturers to address common issues that are important to manufacturing industries. NCMS is an industry driven organization whose agenda is established by industry with input from appropriate government agencies.

  15. C/sic Life Prediction for Propulsion Applications

    NASA Technical Reports Server (NTRS)

    Levine, Stanley R.; Verrilli, Michael J.; Opila, Elizabeth J.; Halbig, Michael C.; Calomino, Anthony M.; Thomas, David J.

    2002-01-01

    Accurate life prediction is critical to successful use of ceramic matrix composites (CMC). The tools to accomplish this are immature and not oriented toward the behavior of carbon fiber reinforced silicon carbide (C/SiC), the primary system of interest for many reusable and single mission launch vehicle propulsion and airframe applications. This paper describes an approach and process made to satisfy the need to develop an integrated life prediction system that addresses mechanical durability and environmental degradation of C/SiC. Issues such as oxidation, steam and hydrogen effects on material behavior are discussed. Preliminary tests indicate that steam will aggressively remove SiC seal coat and matrix in line with past experience. The kinetics of water vapor reaction with carbon fibers is negligible at 600 C, but comparable to air attack at 1200 C. The mitigating effect of steam observed in fiber oxidation studies has also been observed in stress rupture tests. Detailed microscopy of oxidized specimens is being carried out to develop the oxidation model. Carbon oxidation kinetics are reaction controlled at intermediate temperatures and diffusion controlled at high temperatures (approximately 1000 C). Activation energies for T-300 and interface pyrolytic carbon were determined as key inputs to the oxidation model. Crack opening as a function of temperature and stress was calculated. Mechanical property tests to develop and verify the probabilistic life model are very encouraging except for residual strength prediction. Gage width is a key variable governing edge oxidation of seal coated specimens. Future efforts will include architectural effects, enhanced coatings, biaxial tests, and LCF. Modeling will need to account for combined effects.

  16. C/SIC Life Prediction for Propulsion Applications

    NASA Technical Reports Server (NTRS)

    Levine, Stanley R.; Verrilli, Michael J.; Opula, Elizabeth J.; Halbig, Michael C.; Calomino, Anthony M.; Thomas, David J.

    2002-01-01

    Accurate life prediction is critical to successful use of ceramic matrix composites (CMC). The tools to accomplish this are immature and not oriented toward the behavior of carbon fiber reinforced silicon carbide (C/SiC), the primary system of interest for many reusable and single mission launch vehicle propulsion and airframe applications. This paper describes an approach and progress made to satisfy the need to develop an integrated life prediction system that addresses mechanical durability and environmental degradation of C/SiC. Issues such as oxidation, steam and hydrogen effects on material behavior are discussed. Preliminary tests indicate that stream will aggressively remove SiC seal coat and matrix in line with past experience. The kinetics of water vapor reaction with carbon fibers is negligible at 600 C, but comparable to air attack at 1200 C. The mitigating effect of steam observed in fiber oxidation studies has also been observed in stress rupture tests. Detailed microscopy of oxidized specimens is being carried out to develop the oxidation model. Carbon oxidation kinetics are reaction controlled at intermediate temperatures and diffusion controlled at high temperatures (approx. 1000 C). Activation energies for T-300 and interface pyrolytic carbon were determined as key inputs to the oxidation model. Crack opening as a function of temperature and stress was calculated. Mechanical property tests to develop and verify the probabilistic life model are very encouraging except for residual strength prediction. Gage width is a key variable governing edge oxidation of seal coated specimens. Future efforts will include architectural effects, enhanced coatings, biaxial tests, and LCF. Modeling will need to account for combined effects.

  17. Additive Manufacturing Infrared Inspection

    NASA Technical Reports Server (NTRS)

    Gaddy, Darrell

    2014-01-01

    Additive manufacturing is a rapid prototyping technology that allows parts to be built in a series of thin layers from plastic, ceramics, and metallics. Metallic additive manufacturing is an emerging form of rapid prototyping that allows complex structures to be built using various metallic powders. Significant time and cost savings have also been observed using the metallic additive manufacturing compared with traditional techniques. Development of the metallic additive manufacturing technology has advanced significantly over the last decade, although many of the techniques to inspect parts made from these processes have not advanced significantly or have limitations. Several external geometry inspection techniques exist such as Coordinate Measurement Machines (CMM), Laser Scanners, Structured Light Scanning Systems, or even traditional calipers and gages. All of the aforementioned techniques are limited to external geometry and contours or must use a contact probe to inspect limited internal dimensions. This presentation will document the development of a process for real-time dimensional inspection technique and digital quality record of the additive manufacturing process using Infrared camera imaging and processing techniques.

  18. Manufacturing of SiCp Reinforced Magnesium Composite Tubes by Hot Extrusion Processes

    SciTech Connect

    Hwang, Yeong-Maw; Huang, Song-Jeng; Huang, Yu-San

    2011-05-04

    Magnesium alloys have higher specific strength compared with other metals, such as aluminum, copper and steel. Nevertheless, their ductility is still not good for further metal forming and their strength is not large enough for real structure applications. The aim of this paper is to develop magnesium alloy composite tubes reinforced with SiC particulates by the stir-casting method and hot extrusion processes. At first, AZ61/SiCp composite ingots reinforced with 5 wt% SiC particulates are fabricated by the melt-stirring technique. Then, finite element simulations are conducted to analyze the plastic flow of magnesium alloy AZ61 within the die and the temperature distribution of the products. AZ61/SiCp composite tubes are manufactured by hot extrusion using a specially designed die-set for obtaining uniform thickness distribution tubes. Finally, the mechanical properties of the reinforced AZ61/SiCp composite and Mg alloy AZ61 tubes are compared with those of the billets to manifest the advantages of extrusion processes and reinforcement of SiC particulates. The microstructures of the billet and extruded tubes are also observed. Through the improvement of the strength of the tube product, its life cycle can be extended and the energy consumption can be reduced, and eventually the environmental sustainability is achieved.

  19. Manufacturing of SiCp Reinforced Magnesium Composite Tubes by Hot Extrusion Processes

    NASA Astrophysics Data System (ADS)

    Hwang, Yeong-Maw; Huang, Song-Jeng; Huang, Yu-San

    2011-05-01

    Magnesium alloys have higher specific strength compared with other metals, such as aluminum, copper and steel. Nevertheless, their ductility is still not good for further metal forming and their strength is not large enough for real structure applications. The aim of this paper is to develop magnesium alloy composite tubes reinforced with SiC particulates by the stir-casting method and hot extrusion processes. At first, AZ61/SiCp composite ingots reinforced with 5 wt% SiC particulates are fabricated by the melt-stirring technique. Then, finite element simulations are conducted to analyze the plastic flow of magnesium alloy AZ61 within the die and the temperature distribution of the products. AZ61/SiCp composite tubes are manufactured by hot extrusion using a specially designed die-set for obtaining uniform thickness distribution tubes. Finally, the mechanical properties of the reinforced AZ61/SiCp composite and Mg alloy AZ61 tubes are compared with those of the billets to manifest the advantages of extrusion processes and reinforcement of SiC particulates. The microstructures of the billet and extruded tubes are also observed. Through the improvement of the strength of the tube product, its life cycle can be extended and the energy consumption can be reduced, and eventually the environmental sustainability is achieved.

  20. Micro-Raman Measurements and Depth Profiling of SiC

    NASA Astrophysics Data System (ADS)

    Roughani, Bahram; Ramabadran, Uma

    2003-03-01

    Recent progress in growth of high quality 4H- SiC and 6H-SiC polytypes materials may lead to new applications for SiC as high power, high temperature, and high frequency devices that can tolerate harsh environments. Nondestructive techniques that could be used in analyzing various layers of such materials after growth or after exposure to harsh environment could be used in investigation of induced defects or structural damages. We have utilized micro-Raman scattering to investigate the depth profiling of Nitrogen doped 4H-SiC samples. Heavily N-doped 4H-SiC epilayers grown on low doped 4H-SiC substrates were examined. Each SiC sample was placed on micro-positioning translational stage in order to accurately control the focal plane of the laser beam within the sample by adjusting normal distance of the microscope objective with respect to the SiC wafer. We were able to clearly distinguish the epilayer from the SiC substrate. Strong phonon peaks and distinct coupled plasmon-LO phonon modes from the N-doped epilayer were used in this depth profiling analysis. A scattering efficiency model describing the optimal focusing condition for backscattering from a translucent sample was developed. The experimental results of depth profiling and our model for optimal backscattering condition will be presented and discussed.

  1. A new approach for fabrications of SiC based photodetectors.

    PubMed

    Aldalbahi, Ali; Li, Eric; Rivera, Manuel; Velazquez, Rafael; Altalhi, Tariq; Peng, Xiaoyan; Feng, Peter X

    2016-03-18

    We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged.

  2. Ag Transport Through Non-Irradiated and Irradiated SiC

    SciTech Connect

    Szlufarska, Izabela; Morgan, Dane; Blanchard, James

    2016-01-11

    Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

  3. Molecular systems biology of Sic1 in yeast cell cycle regulation through multiscale modeling.

    PubMed

    Barberis, Matteo

    2012-01-01

    Cell cycle control is highly regulated to guarantee the precise timing of events essential for cell growth, i.e., DNA replication onset and cell division. Failure of this control plays a role in cancer and molecules called cyclin-dependent kinase (Cdk) inhibitors (Ckis) exploit a critical function in cell cycle timing. Here we present a multiscale modeling where experimental and computational studies have been employed to investigate structure, function and temporal dynamics of the Cki Sic1 that regulates cell cycle progression in Saccharomyces cerevisiae. Structural analyses reveal molecular details of the interaction between Sic1 and Cdk/cyclin complexes, and biochemical investigation reveals Sic1 function in analogy to its human counterpart p27(Kip1), whose deregulation leads to failure in timing of kinase activation and, therefore, to cancer. Following these findings, a bottom-up systems biology approach has been developed to characterize modular networks addressing Sic1 regulatory function. Through complementary experimentation and modeling, we suggest a mechanism that underlies Sic1 function in controlling temporal waves of cyclins to ensure correct timing of the phase-specific Cdk activities.

  4. A new approach for fabrications of SiC based photodetectors

    PubMed Central

    Aldalbahi, Ali; Li, Eric; Rivera, Manuel; Velazquez, Rafael; Altalhi, Tariq; Peng, Xiaoyan; Feng, Peter X.

    2016-01-01

    We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged. PMID:26988399

  5. Creep deformation of grain boundary in a highly crystalline SiC fibre.

    PubMed

    Shibayama, Tamaki; Yoshida, Yutaka; Yano, Yasuhide; Takahashi, Heishichiro

    2003-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.

  6. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    NASA Astrophysics Data System (ADS)

    Li, M.; Cheng, Y.; Zheng, Y. F.; Zhang, X.; Xi, T. F.; Wei, S. C.

    2012-01-01

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 ± 1 °C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  7. Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

    NASA Astrophysics Data System (ADS)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

    2014-10-01

    Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

  8. Layered Manufacturing: Challenges and Opportunities

    DTIC Science & Technology

    2003-04-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP014215 TITLE: Layered Manufacturing : Challenges and Opportunities ...Research Society LL1.4 Layered Manufacturing : Challenges and Opportunities Khershed P. Cooper Materials Science and Technology Division, Naval Research...Laboratory Washington, DC 20375-5343, U.S.A. ABSTRACT Layered Manufacturing (LM) refers to computer-aided manufacturing processes in which parts are made

  9. Complex Function for SicA, a Salmonella enterica Serovar Typhimurium Type III Secretion-Associated Chaperone

    PubMed Central

    Tucker, Stephanie C.; Galán, Jorge E.

    2000-01-01

    Salmonella enterica encodes a type III secretion system within a pathogenicity island located at centisome 63 that is essential for virulence. All type III secretion systems require the function of a family of low-molecular-weight proteins that aid the secretion process by acting as partitioning factors and/or secretion pilots. One such protein is SicA, which is encoded immediately upstream of the type III secreted proteins SipB and SipC. We found that the absence of SicA results in the degradation of both SipB and SipC. Interestingly, in the absence of SipC, SipB was not only stable but also secreted at wild-type levels in a sicA mutant background, indicating that SicA is not required for SipB secretion. We also found that SicA is capable of binding both SipB and SipC. These results are consistent with a SicA role as a partitioning factor for SipB and SipC, thereby preventing their premature association and degradation. We also found that introduction of a sicA null mutation results in the lack of expression of SopE, another type III-secreted protein. Such an effect was shown to be transcriptional. Introduction of a loss-of-function sipC mutation into the sicA mutant background rescued sopE expression. These results indicate that the effect of sicA on sopE expression is indirect and most likely exerted through a regulatory factor(s) partitioned by SicA from SipC. These studies therefore describe a surprisingly complex function for the Salmonella enterica type III secretion-associated chaperone SicA. PMID:10735870

  10. Environmentally sound manufacturing

    NASA Astrophysics Data System (ADS)

    Caddy, Larry A.; Bowman, Ross; Richards, Rex A.

    The NASA/Thiokol/industry team has developed and started implementation of an environmentally sound manufacturing plan for the continued production of solid rocket motors. They have worked with other industry representatives and the U.S. Environmental Protection Agency to prepare a comprehensive plan to eliminate all ozone depleting chemicals from manufacturing processes and to reduce the use of other hazardous materials used to produce the space shuttle reusable solid rocket motors. The team used a classical approach for problem solving combined with a creative synthesis of new approaches to attack this problem. As our ability to gather data on the state of the Earth's environmental health increases, environmentally sound manufacturing must become an integral part of the business decision making process.

  11. Environmentally sound manufacturing

    NASA Technical Reports Server (NTRS)

    Caddy, Larry A.; Bowman, Ross; Richards, Rex A.

    1994-01-01

    The NASA/Thiokol/industry team has developed and started implementation of an environmentally sound manufacturing plan for the continued production of solid rocket motors. They have worked with other industry representatives and the U.S. Environmental Protection Agency to prepare a comprehensive plan to eliminate all ozone depleting chemicals from manufacturing processes and to reduce the use of other hazardous materials used to produce the space shuttle reusable solid rocket motors. The team used a classical approach for problem solving combined with a creative synthesis of new approaches to attack this problem. As our ability to gather data on the state of the Earth's environmental health increases, environmentally sound manufacturing must become an integral part of the business decision making process.

  12. ATS materials/manufacturing

    SciTech Connect

    Karnitz, M.A.; Wright, I.G.; Ferber, M.K.

    1997-11-01

    The Materials/Manufacturing Technology subelement is a part of the base technology portion of the Advanced Turbine Systems (ATS) Program. The work in this subelement is being performed predominantly by industry with assistance from national laboratories and universities. The projects in this subelement are aimed toward hastening the incorporation of new materials and components in gas turbines. Work is currently ongoing on thermal barrier coatings (TBCs), the scale-up of single crystal airfoil manufacturing technologies, materials characterization, and technology information exchange. This paper presents highlights of the activities during the past year. 12 refs., 24 figs., 4 tabs.

  13. Computers in manufacturing.

    PubMed

    Hudson, C A

    1982-02-12

    Computers are now widely used in product design and in automation of selected areas in factories. Within the next decade, the use of computers in the entire spectrum of manufacturing applications, from computer-aided design to computer-aided manufacturing and robotics, is expected to be practical and economically justified. Such widespread use of computers on the factory floor awaits further advances in computer capabilities, the emergence of systems that are adaptive to the workplace, and the development of interfaces to link islands of automation and to allow effective user communications.

  14. High Temperature Silicon Carbide (SiC) Traction Motor Drive

    DTIC Science & Technology

    2011-08-09

    the battery bus. The motor drive contains an EMI filter to block switching noise from being transmitted to the input supply lines. Bus capacitance...suitable. Ceramic capacitors are known to be capable of withstanding greater temperatures and voltages than electrolytic or film capacitors, but are not...as power dense or as high in capacitance for their size. Capacitors manufactured by AVX utilizing X7R ceramic material in large “DIP” style packages

  15. Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Powell, J. Anthony; Beheim, Glenn M.; Benavage, Emye L.; Abel, Phillip B.; Trunek, Andrew J.; Spry, David J.; Dudley, Michael; Vetter, William M.

    2002-01-01

    Lateral homoepitaxial growth of thin cantilevers emanating from mesa patterns that were reactive ion etched into on-axis commercial SiC substrates prior to growth is reported. The thin cantilevers form after pure stepflow growth removes almost all atomic steps from the top surface of a mesa, after which additional adatoms collected by the large step-free surface migrate to the mesa sidewall where they rapidly incorporate into the crystal near the top of the mesa sidewall. The lateral propagation of the step-free cantilevered surface is significantly affected by pregrowth mesa shape and orientation, with the highest lateral expansion rates observed at the inside concave comers of V-shaped pregrowth mesas with arms lengthwise oriented along the {1100} direction. Complete spanning of the interiors of V's and other mesa shapes with concave comers by webbed cantilevers was accomplished. Optical microscopy, synchrotron white beam x-ray topography and atomic force microscopy analysis of webbed regions formed over a micropipe and closed-core screw dislocations show that c-axis propagation of these defects is terminated by the webbing. Despite the nonoptimized process employed in this initial study, webbed surfaces as large as 1.4 x 10(exp -3) square centimeters, more than four times the pregrowth mesa area, were grown. However, the largest webbed surfaces were not completely free of bilayer steps, due to unintentional growth of 3C-SiC that occurred in the nonoptimized process. Further process optimization should enable larger step-free webs to be realized.

  16. Methods for growth of relatively large step-free SiC crystal surfaces

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  17. Stellar Origins of C-13 and N-15-Enriched Presolar SiC Grains

    NASA Technical Reports Server (NTRS)

    Liu, Nan; Nittler, Larry R.; Alexander, Conel M. O’D.; Wang, Jianhua; Pignatari, Marco; Jose, Jordi; Nguyen, Ann

    2016-01-01

    Extreme excesses of 13 C ( C (12 C/ 13 C<10) and 15 N ( N (14 N/ 15 N< 20) in rare presolar SiC 20) in rare presolar SiClar SiC grains have been considered diagnostic of an origin in classical novae [1], though an origin in core-collapse supernovae (CCSNe) has also been proposed [2]. We report multi-element isotopic data for 19 13 C- and 15 N-enriched presolar SiC grains(12 C/13 C<16 and 14 N/ 15 N<150) from an acid resistant residue of the Murchison meteorite. These grains are enriched in 13 C and15 N, but with quite diverse Si isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures.

  18. Layered SiC sheets: a potential catalyst for oxygen reduction reaction.

    PubMed

    Zhang, P; Xiao, B B; Hou, X L; Zhu, Y F; Jiang, Q

    2014-01-22

    The large-scale practical application of fuel cells cannot come true if the high-priced Pt-based electrocatalysts for oxygen reduction reaction (ORR) cannot be replaced by other efficient, low-cost, and stable electrodes. Here, based on density functional theory (DFT), we exploited the potentials of layered SiC sheets as a novel catalyst for ORR. From our DFT results, it can be predicted that layered SiC sheets exhibit excellent ORR catalytic activity without CO poisoning, while the CO poisoning is the major drawback in conventional Pt-based catalysts. Furthermore, the layered SiC sheets in alkaline media has better catalytic activity than Pt(111) surface and have potential as a metal-free catalyst for ORR in fuel cells.

  19. Synthesis of SiC nanorods from sheets of single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Muñoz, E.; Dalton, A. B.; Collins, S.; Zakhidov, A. A.; Baughman, R. H.; Zhou, W. L.; He, J.; O'Connor, C. J.; McCarthy, B.; Blau, W. J.

    2002-06-01

    We report the unexpected synthesis of SiC nanorods during thermally annealing single-walled carbon nanotube sheets (SWNTs) at 1000 °C between two silicon wafers. The exterior layers of the carbon nanotube sheets were converted into a network of SiC nanorods, while the carbon nanotubes interior to the sheet remain unchanged. The nanotube sheets that underwent this reaction were comprised of small diameter nanotubes made by a high-pressure carbon monoxide process (HiPco), which contain iron catalyst. Using the same reaction conditions, SiC formation was not observed for sheets of purified, larger diameter nanotubes made by laser ablation, which contained a small amount of residual metal catalysts.

  20. Oxidation instability of SiC and Si3N4 following thermal excursions

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.

    1991-01-01

    The effect of thermal excursion and thermal cycling on the oxidation stability of chemical vapor-deposited (CVD) SiC and Si3N4 was studied at 1350 C. Thermal cycling alone produced no noticeable change in oxidation kinetics. However, TEM showed that oxide scales grown in cycles consist of alternating layers of SiO2 and Si2N2O. When the oxidation of CVD SiC or Si3N4 at 1350 C was interrupted with a 1.5-h annealing in Ar at 1500 C, the kinetics of reoxidation at 1350 C were found to be drastically increased. The SiC and Si3N4 then oxidized essentially at the same rate, which is over 50 times the preannealing rate, and comparable to the expected oxidation rate of these materials at 1500 C.

  1. The diffusion welding of 7075Al-3%SiC particles reinforced composites

    NASA Astrophysics Data System (ADS)

    Aydin, M.; Gürler, R.; Türker, M.

    2009-02-01

    A group of 3% SiC particle reinforced Al-7075 alloys was diffusion joined at 560°C between 1 h and 2 h durations under 2 MPa applied pressure in a vacuum of 2 × 10-3 Pa. Optical microscopy and SEM-EDS studies were used to characterise the weldment and the fracture surfaces of all samples investigated. A non-planar interface formation was observed at the bond interface. The maximum shear strength of 137 MPa was obtained with the composite 7075-3% SiC joined for two hours, which is 92% of the shear strength of the parent material. The fracture surface of the 7075-3% SiC composites displayed a non-planar fracture surfaces with some plastic deformation.

  2. Microporous layer based on SiC for high temperature proton exchange membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Lobato, Justo; Zamora, Héctor; Cañizares, Pablo; Plaza, Jorge; Rodrigo, Manuel Andrés

    2015-08-01

    This work reports the evaluation of Silicon Carbide (SiC) for its application in microporous layers (MPL) of HT-PEMFC electrodes and compares results with those obtained using conventional MPL based on Vulcan XC72. Influence of the support load on the MPL prepared with SiC was evaluated, and the MPL were characterized by XRD, Hg porosimetry and cyclic voltammetries. In addition, a short lifetest was carried out to evaluate performance in accelerated stress conditions. Results demonstrate that SiC is a promising alternative to carbonaceous materials because of its higher electrochemical and thermal stability and the positive effect on mass transfer associated to its different pore size distribution. Ohmic resistance is the most significant challenge to be overcome in further studies.

  3. Men Working on Mock-Up of S-IC Thrust Structure

    NASA Technical Reports Server (NTRS)

    1963-01-01

    This photograph depicts Marshall Space Flight Center employees, James Reagin, machinist (top); Floyd McGinnis, machinist; and Ernest Davis, experimental test mechanic (foreground), working on a mock up of the S-IC thrust structure. The S-IC stage is the first stage, or booster, of the 364-foot long Saturn V rocket that ultimately took astronauts to the Moon. The S-IC stage, burned over 15 tons of propellant per second during its 2.5 minutes of operation to take the vehicle to a height of about 36 miles and to a speed of about 6,000 miles per hour. The stage was 138 feet long and 33 feet in diameter. Operating at maximum power, all five of the engines produced 7,500,000 pounds of thrust.

  4. Inside a Diamond Planet: Experimental Investigation of High P-T SiC

    NASA Astrophysics Data System (ADS)

    Daviau, K.; Du, Z.; Lee, K. K. M.

    2015-12-01

    The discovery of hundreds of diverse extrasolar planetary systems implies that there are many worlds in the universe unlike our own. Models indicate that carbon-rich planets, composed largely of SiC and C, may be abundant around carbon rich stars (Kuchner and Seager 2005, Moriarty et al 2014). In order to understand the structure and evolution of such an unfamiliar planet, the basic thermodynamic phase relations of the major materials present must first be constrained. Using the laser heated diamond anvil cell (LHDAC) in combination with Raman analysis and X-Ray diffraction, this study investigates the high pressure and temperature phase diagram of SiC. Microprobe and diffraction data indicate that SiC decomposes at high P-T and that the change follows a negative Clapeyron slope. This has interesting implications for the interior "mantle" structure and dynamics of a SiC-based planet.

  5. Creep behavior of MoSi{sub 2}-SiC composites

    SciTech Connect

    Butt, D.P.; Maloy, S.A.; Kung, H.; Korzekwa, D.A.; Petrovic, J.J.

    1993-12-31

    Using a cylindrical indenter, indentation creep behavior of hot pressed and HIPed MoSi{sub 2}-SiC composites containing 0--40% SiC by volume, was characterized at 1000--1200C, 258--362 MPa. Addition of SiC affects the creep behavior of MoSi{sub 2} in a complex manner by pinning grain boundaries during pressing, thus leading to smaller MoSi{sub 2} grains; by obstructing or altering both dislocation motion and grain boundary sliding; and by increasing the overall yield stress of the material. Comparisons are made between indentation and compressive creep studies. It is shown that under certain conditions, compressive creep and indentation creep measurements yield comparable results after correcting for effective stresses and strain rates beneath the indenter.

  6. High temperature behavior of pressureless-sintered SiC in a steel soaking pit environment

    SciTech Connect

    Wei, G.C.; White, C.L.

    1984-07-01

    Sintered-..cap alpha.. SiC was exposed for about 800 h at about 1250/sup 0/C to a steel soaking pit environment. A slag layer consisting of hematite and low cristobalite in an Fe-K-Ca silicate glass matrix was formed on the external surface of sintered-..cap alpha.. SiC. No measurable corrosion or loss of material was observed. Large angular pores and depletion of graphite sintering aid, observed in the surface region of the as-received material, resulted in a lower-than-usual fracture strength. The fracture strength increased slightly following the exposure. Auger electron spectroscopic analysis identified oxygen penetration in the near-surface region of the exposed material. The results suggested that sintered-..cap alpha.. SiC would be suitable for use as a heat exchanger material in steel soaking pits. 8 references, 8 figures, 1 table.

  7. Liquid-Solid Reactions and Microstructure of SiC-5120 Steel Composite Brake Material

    NASA Astrophysics Data System (ADS)

    Li, Jingyang; Ru, Hongqiang; Yang, Hong; Liu, Yinong

    2012-02-01

    This study investigated solid-liquid reactions between SiC preform and molten 5120 steel during infiltration casting of SiC-steel composite for heavy duty brake applications. The reactions between SiC and the molten steel resulted in the formation of three distinctive microstructural regions, including the α 1-Fe(Si)-graphite region, the pearlite region, and the ferrite-pearlite region. The phase structures were identified by means of X-ray diffraction, X-ray energy dispersive spectrometry, and metallographic examination. These observations reveal that SiC was decomposed via reactions with the molten steel. The diffusion of C and Si into the molten steel and selective solidification led to the formation of different regions with varied C and Si contents. The microstructures produced during the solidification sequence are identified to be the ferrite-pearlite → pearlite → α 1-Fe(Si) + graphite and cementite.

  8. The Oxidation Rate of SiC in High Pressure Water Vapor Environments

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Robinson, R. Craig

    1999-01-01

    CVD SiC and sintered alpha-SiC samples were exposed at 1316 C in a high pressure burner rig at total pressures of 5.7, 15, and 25 atm for times up to 100h. Variations in sample emittance for the first nine hours of exposure were used to determine the thickness of the silica scale as a function of time. After accounting for volatility of silica in water vapor, the parabolic rate constants for Sic in water vapor pressures of 0.7, 1.8 and 3.1 atm were determined. The dependence of the parabolic rate constant on the water vapor pressure yielded a power law exponent of one. Silica growth on Sic is therefore limited by transport of molecular water vapor through the silica scale.

  9. Investigation of reactivity between SiC and Nb-1Zr in planned irradiation creep experiments

    SciTech Connect

    Lewinsohn, C.A.; Hamilton, M.L.; Jones, R.H.

    1997-08-01

    Thermodynamic calculations and diffusion couple experiments showed that SiC and Nb-1Zr were reactive at the upper range of temperatures anticipated in the planned irradiation creep experiment. Sputter-deposited aluminum oxide (Al{sub 2}O{sub 3}) was selected as a diffusion barrier coating. Experiments showed that although the coating coarsened at high temperature it was an effective barrier for diffusion of silicon from SiC into Nb-1Zr. Therefore, to avoid detrimental reactions between the SiC composite and the Nb-1Zr pressurized bladder during the planned irradiation creep experiment, a coating of Al{sub 2}O{sub 3} will be required on the Nb-1Zr bladder.

  10. Quantum spin Hall phase in stanene-derived overlayers on passivated SiC substrates

    NASA Astrophysics Data System (ADS)

    Matusalem, Filipe; Bechstedt, Friedhelm; Marques, Marcelo; Teles, Lara K.

    2016-12-01

    We present atomic and electronic structure studies using first-principles calculations of two-dimensional topological insulators, stanene and fluorostanene, deposited on 4 H -SiC(0001) substrates. We demonstrate the stability of H- or F-passivated honeycomb crystals due to a van der Waals interaction between the adsorbate and substrate. Despite destroyed inversion symmetry and biaxial strain the calculations of the band structures and Z2 topological invariants predict that the quantum spin Hall (QSH) phase of stanene on H-passivated SiC as well as fluorostanene on H- and F-passivated SiC survives the interaction with the substrate. Our findings should serve as guidance for the epitaxial growth of tin-based QSH systems on wide-band-gap semiconductors.

  11. Charge neutrality in epitaxial graphene on 6 H -SiC(0001) via nitrogen intercalation

    NASA Astrophysics Data System (ADS)

    Caffrey, Nuala M.; Armiento, Rickard; Yakimova, Rositsa; Abrikosov, Igor A.

    2015-08-01

    The electronic properties of epitaxial graphene grown on SiC(0001) are known to be impaired relative to those of freestanding graphene. This is due to the formation of a carbon buffer layer between the graphene layers and the substrate, which causes the graphene layers to become strongly n -doped. Charge neutrality can be achieved by completely passivating the dangling bonds of the clean SiC surface using atomic intercalation. So far, only one element, hydrogen, has been identified as a promising candidate. We show, using first-principles density functional calculations, how it can also be accomplished via the growth of a thin layer of silicon nitride on the SiC surface. The subsequently grown graphene layers display the electronic properties associated with charge neutral graphene. We show that the surface energy of this structure is considerably lower than that of others with intercalated atomic nitrogen and determine how its stability depends on the N2 chemical potential.

  12. Interstellar SiC with unusual isotopic compositions - Grains from a supernova?

    NASA Technical Reports Server (NTRS)

    Amari, Sachiko; Hoppe, Peter; Zinner, Ernst; Lewis, Roy S.

    1992-01-01

    Results are presented from an ion microprobe mass spectrometric analyses of five SiC grains from the Murchison carbonaceous meteorite. Unlike most interstellar SiC grains from primitive meteorites, the five grains from the Murchison meteorite show large excesses of C-12 (up to 28 times solar) and N-15 (up to 22 times solar), depletion in Si-29 and Si-30 (up to 59 percent), Al-26/Al-27 ratios between 0.1 and 0.6, and Ti-49 excesses up to 95 percent; in addition, one grain has a large Ca-44 excess (300 percent). The Ca and Ti anomalies point toward explosive nucleosynthesis in supernovae and the in situ decay of the radioactive precursors Ti-44 and V-49 in SiC grains formed in supernova ejecta. However, there is no simple formation scenario that can give a consistent explanation for the isotopic compositions of these grains.

  13. Acoustic emission during fatigue crack propagation in SiC particle reinforced Al matrix composites

    SciTech Connect

    Niklas, A.; Froyen, L.; Wevers, M.; Delaey, L.

    1995-12-01

    The acoustic emission (AE) behavior during fatigue propagation in aluminum 6061 and aluminum 6061 matrix composites containing 5, 10, and 20 wt pct SiC particle reinforcement was investigated under tension-tension fatigue loading. The purpose of this investigation was to monitor fatigue crack propagation by the AE technique and to identify the source(s) of AE. Most of the AEs detected were observed at the top of the load cycles. The cumulative number of AE events was found to correspond closely to the fatigue crack growth and to increase with increasing SiC content. Fractographic studies revealed an increasing number of fractured particles and to a lesser extent decohered particles on the fatigue fracture surface as the crack propagation rate (e.g., {Delta}K) or the SiC content was increased.

  14. Broadband Near-Unidirectional Absorption Enabled by Phonon-Polariton Resonances in SiC Micropyramid Arrays

    NASA Astrophysics Data System (ADS)

    Devarapu, G. C. R.; Foteinopoulou, S.

    2017-03-01

    Inspired by moth eyes, nature's most powerful antireflex, we present a subwavelength SiC micropyramid design, which operates in the reststrahlen band of SiC, namely, the spectral band of strong phonon-photon coupling in the SiC material. While within this band, SiC repels electromagnetic waves, we observe here a broad low-reflectivity window with unique attributes, with distinct characteristics different from typical dielectric moth-eye-like structures. To be specific, while the latter systems are entirely symmetric, the reflection response of our SiC micropyramid system can be highly asymmetric. In particular, the SiC micropyramid system can be near reflectionless for light impinging from the tip side of the micropyramids and can exhibit more than 90% reflection for light impinging from the base side of the micropyramids, over a broad wavelength range in the SiC reststrahlen band. This strongly asymmetric reflection response emanates from the cascaded coupling of vortexlike cavity modes at each of the SiC blocks comprising the micropyramids and translates into a strongly unidirectional absorber response. We discuss how, by virtue of Kirchhoff's law, this strongly unidirectional superabsorber behavior implies a strongly unidirectional emission profile that is important for one-way infrared sources and passive-radiative-cooling systems.

  15. Fabrication and characterization of SiC f/SiC composites produced by the slurry infiltration process

    NASA Astrophysics Data System (ADS)

    Lee, S. P.; Lee, M. H.; Lee, J. K.; Byun, J. H.; Kohyama, A.

    2011-10-01

    The mechanical properties of SiC f/SiC composites have been investigated, based on detailed analyses of their microstructure. SiC f/SiC composites were prepared from fiber preforms by a slurry infiltration technique, in which a mixture with SiC, Al 2O 3, and Y 2O 3 particles was impregnated into the fabric structure. SiC f/SiC composites were consolidated by liquid phase sintering process, associated with the creation of secondary phases by the addition of Al 2O 3 and Y 2O 3 particles. The reinforcing material was a plain weave Tyranno SA SiC fabric with a carbon interfacial layer. The sintered density and the pore volume fraction of SiC f/SiC composites were about 3.0 Mg/m 3 and about 10%, respectively. These SiC f/SiC composites had an average flexural strength of about 250 MPa at room temperature. They exhibited pseudo-ductile fracture behavior, due to the carbon interfacial layer. The introduction of the carbon interfacial layer greatly improved the fracture energy of SiC f/SiC composites.

  16. Purity and radioactive decay behaviour of industrial 2D-reinforced SiC f/SiC composites

    NASA Astrophysics Data System (ADS)

    Scholz, H. W.; Zucchetti, M.; Casteleyn, K.; Adelhelm, C.

    1994-09-01

    Ceramic matrix composites based on SiC with continuous fibres (SiC f/SiC) are considered promising structural materials for future fusion devices. It was still to clarify, whether impurities in industrial SiC f/SiC could jeopardise radiological advantages. Experimental impurity analyses revealed a two-dimensionally reinforced SiC f/SiC with the matrix produced by CVI as very pure. Chemo-spectrometric methods were combined with radioactivation methods (CPAA, NAA). A quantification of the main constituents Si, C and O was added. Calculations with the FISPACT-2.4 code and EAF-2 library identified elements detrimental for different low-activation criteria. For the neutron exposure, EEF reactor-study first wall and blanket conditions were simulated. The calculated SiC f/ SiC included 48 trace elements. Even under conservative assumptions, all low-activation limits of European interest are fulfilled. Exclusively the hands-on recycling limit for the First Wall can intrinsically not be satisfied with SiC. The theoretical goal of a SiC f/SiC depleted of 28Si (isotopic tailoring) is critically discussed.

  17. Northwest Manufacturing Initiative

    DTIC Science & Technology

    2014-07-31

    manufacturer, now recycle used soda bottles , unusable second quality fabrics and worn out garments into polyester fibers to produce many of their clothes... Recycling .............................. B1-FB7-1 Warehouse Layout Design at Shady Peeps...Analysis and Recommendations .......................................... B1-FB11-1 NextStep Recycling Supply Chain and Ops Analysis and

  18. Rapid response manufacturing (RRM)

    SciTech Connect

    Cain, W.D.; Waddell, W.L.

    1997-02-18

    US industry is fighting to maintain its competitive edge in the global market place. Today markets fluctuate rapidly. Companies, to survive, have to be able to respond with quick-to-market, improved, high quality, cost efficient products. The way products are developed and brought to market can be improved and made more efficient through the proper incorporation of emerging technologies. The RRM project was established to leverage the expertise and resources of US private industries and federal agencies to develop, integrate, and deploy new technologies that meet critical needs for effective product realization. The RRM program addressed a needed change in the US Manufacturing infrastructure that will ensure US competitiveness in world market typified by mass customization. This project provided the effort needed to define, develop and establish a customizable infrastructure for rapid response product development design and manufacturing. A major project achievement was the development of a broad-based framework for automating and integrating the product and process design and manufacturing activities involved with machined parts. This was accomplished by coordinating and extending the application of feature-based product modeling, knowledge-based systems, integrated data management, and direct manufacturing technologies in a cooperative integrated computing environment. Key technological advancements include a product model that integrates product and process data in a consistent, minimally redundant manner, an advanced computer-aided engineering environment, knowledge-based software aids for design and process planning, and new production technologies to make products directly from design application software.

  19. Manufacturing Technology. Curriculum Guide.

    ERIC Educational Resources Information Center

    North Dakota State Board for Vocational Education, Bismarck.

    This guide provides the basic foundation to develop a one-semester course based on the cluster concept, manufacturing technology. One of a set of six guides for an industrial arts curriculum at the junior high school level, it suggests activities that allow students (1) to become familiar with and use some of the tools, materials, and processes…

  20. Drug development and manufacturing

    DOEpatents

    Warner, Benjamin P.; McCleskey, T. Mark; Burrell, Anthony K.

    2015-10-13

    X-ray fluorescence (XRF) spectrometry has been used for detecting binding events and measuring binding selectivities between chemicals and receptors. XRF may also be used for estimating the therapeutic index of a chemical, for estimating the binding selectivity of a chemical versus chemical analogs, for measuring post-translational modifications of proteins, and for drug manufacturing.

  1. Advanced Computing for Manufacturing.

    ERIC Educational Resources Information Center

    Erisman, Albert M.; Neves, Kenneth W.

    1987-01-01

    Discusses ways that supercomputers are being used in the manufacturing industry, including the design and production of airplanes and automobiles. Describes problems that need to be solved in the next few years for supercomputers to assume a major role in industry. (TW)

  2. Reusing Old Manufacturing Buildings

    ERIC Educational Resources Information Center

    Roman, Harry T.

    2014-01-01

    This article presents an interesting design challenge for students, one that will certainly let them integrate subject matter and get a sense of pride for doing something useful in their own community. The author would be willing to bet that the average town or city has some old red brick manufacturing building(s) that have seen much better days.…

  3. Illinois Manufacturing Technology Curriculum.

    ERIC Educational Resources Information Center

    Cliffe, Roger; And Others

    This manufacturing technology curriculum involves students in learning problem-solving, communication, team building, quality control, safety, math, science, and technical skills. The document begins with a section on implementation, which gives background information on the purposes and development of the curriculum, explains its rationale,…

  4. Manufacturing (Industrial) Technician.

    ERIC Educational Resources Information Center

    Ohio State Univ., Columbus. Center on Education and Training for Employment.

    This document contains 35 units to consider for use in a tech prep competency profile for the occupation of manufacturing (industrial) technician. All the units listed will not necessarily apply to every situation or tech prep consortium, nor will all the competencies within each unit be appropriate. Several units appear within each specific…

  5. Wide-gap semiconducting graphene from nitrogen-seeded SiC.

    PubMed

    Wang, F; Liu, G; Rothwell, S; Nevius, M; Tejeda, A; Taleb-Ibrahimi, A; Feldman, L C; Cohen, P I; Conrad, E H

    2013-10-09

    All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

  6. Enhanced crystallinity of epitaxial graphene grown on hexagonal SiC surface with molybdenum plate capping.

    PubMed

    Jin, Han Byul; Jeon, Youngeun; Jung, Sungchul; Modepalli, Vijayakumar; Kang, Hyun Suk; Lee, Byung Cheol; Ko, Jae-Hyeon; Shin, Hyung-Joon; Yoo, Jung-Woo; Kim, Sung Youb; Kwon, Soon-Yong; Eom, Daejin; Park, Kibog

    2015-04-24

    The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is considered to induce heat accumulation on SiC surface by thermal radiation mirroring and raise Si partial pressure near surface by confining the sublimated Si atoms between SiC substrate and Mo-plate, which would be the essential contributors of crystallinity enhancement.

  7. Effects of irradiation on the mechanical behavior of twined SiC nanowires

    SciTech Connect

    Jin Enze; Niu Lisha; Lin Enqiang; Duan Zheng

    2013-03-14

    Irradiation is known to bring new features in one-dimensional nano materials. In this study, we used molecular dynamics simulations to investigate the irradiation effects on twined SiC nanowires. Defects tend to accumulate from outside toward inside of the twined SiC nanowires with increasing irradiation dose, leading to a transition from brittle to ductile failure under tensile load. Atomic chains are formed in the ductile failure process. The first-principles calculations show that most of the atomic chains are metallic.

  8. Bipolar integrated circuits in SiC for extreme environment operation

    NASA Astrophysics Data System (ADS)

    Zetterling, Carl-Mikael; Hallén, Anders; Hedayati, Raheleh; Kargarrazi, Saleh; Lanni, Luigia; Malm, B. Gunnar; Mardani, Shabnam; Norström, Hans; Rusu, Ana; Saveda Suvanam, Sethu; Tian, Ye; Östling, Mikael

    2017-03-01

    Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

  9. Spallation recoil II: Xenon evidence for young SiC grains

    NASA Astrophysics Data System (ADS)

    Ott, U.; Altmaier, M.; Herpers, U.; Kuhnhenn, J.; Merchel, S.; Michel, R.; Mohapatra, R. K.

    2005-11-01

    We have determined the recoil range of spallation xenon produced by irradiation of Ba glass targets with ˜1190 and ˜268 MeV protons, using a catcher technique, where spallation products are measured in target and catcher foils. The inferred range for 126Xe produced in silicon carbide is ˜0.19 μm, which implies retention of ˜70% for 126Xe produced in "typical" presolar silicon carbide grains of 1 μm size. Recoil loss of spallation xenon poses a significantly smaller problem than loss of the spallation neon from SiC grains. Ranges differ for the various Xe isotopes and scale approximately linearly as function of the mass difference between the target element, Ba, and the product. As a consequence, SiC grains of various sizes will have differences in spallation Xe composition. In an additional experiment at ˜66 MeV, where the recoil ranges of 22Na and 127Xe produced on Ba glass were determined using γ-spectrometry, we found no evidence for recoil ranges being systematically different at this lower energy. We have used the new data to put constraints on the possible presolar age of the SiC grains analyzed for Xe by Lewis et al. (1994). Uncertainties in the composition of the approximately normal Xe component in SiC (Xe-N) constitute the most serious problem in determining an age, surpassing remaining uncertainties in Xe retention and production rate. A possible interpretation is that spallation contributions are negligible and that trapped 124Xe/126Xe is ˜5% lower in Xe-N than in Q-Xe. But also for other reasonable assumptions for the 124Xe/126Xe ratio in Xe-N (e.g., as in Q-Xe), inferred exposure ages are considerably shorter than theoretically expected lifetimes for interstellar grains. A short presolar age is in line with observations by others (appearance, grain size distribution) that indicate little processing in the interstellar medium (ISM) of surviving (crystalline) SiC. This may be due to amorphization of SiC in the ISM on a much shorter time scale

  10. A method to extract pure Raman spectrum of epitaxial graphene on SiC

    NASA Astrophysics Data System (ADS)

    Kunc, J.; Hu, Y.; Palmer, J.; Berger, C.; de Heer, W. A.

    2013-11-01

    The Raman spectrum of epitaxial graphene on SiC is generally obtained by simply subtracting a SiC spectra from the experimental data, which results in noisy spectrum and negative intensity. By using a Non-negative Matrix Factorization (NMF) method, we obtain pure graphene spectra, even for monolayer graphene and sub-micron size patterned features, as well as in spatial mapping and depth profile. We show that the NMF method is efficient in data smoothing and for signal deconvolution with no assumption required for the functional form of the signals.

  11. SiC coating: An alternative for the protection of nuclear graphite from liquid fluoride salt

    NASA Astrophysics Data System (ADS)

    He, Xiujie; Song, Jinliang; Tan, Jie; Zhang, Baoliang; Xia, Huihao; He, Zhoutong; Zhou, Xingtai; Zhao, Mingwen; Liu, Xiangdong; Xu, Li; Bai, Shuo

    2014-05-01

    SiC coating is produced on a nuclear graphite (NG) substrate using chemical vapor deposition at 1150 °C to protect it from molten salt diffusion. Infiltration studies, performed in molten FLiNaK salt under an argon atmosphere at 5 atm, show that uncoated NG exhibits significantly higher weight gain than SiC-coated NG. The continuous and compact SiC coating exhibits excellent infiltration resistance in liquid fluoride salt as confirmed by synchrotron radiation X-ray microbeam fluorescence.

  12. SiC- and GaN-Semiconductors for Terrestrial PV Applications

    NASA Astrophysics Data System (ADS)

    Wilhelm, Christian; Wienhausen, Arne Hendrik; Hensel, Andreas; Kranzer, Dirk; Burger, Bruno

    2014-08-01

    Compared to conventional Silicon (Si) transistors, wide- bandgap transistors based on Silicon Carbide (SiC) or Gallium Nitride (GaN) have great advantages in terms of low on-resistance and low switching losses [1]. In this paper the influence of SiC and GaN transistors on system level is presented by example of four different projects for terrestrial applications. In all these research projects with different focus on application higher or equal efficiency combined with higher power density (reduced weight) could be reached.

  13. Precise control of epitaxy of graphene by microfabricating SiC substrate

    NASA Astrophysics Data System (ADS)

    Fukidome, H.; Kawai, Y.; Fromm, F.; Kotsugi, M.; Handa, H.; Ide, T.; Ohkouchi, T.; Miyashita, H.; Enta, Y.; Kinoshita, T.; Seyller, Th.; Suemitsu, M.

    2012-07-01

    Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices.

  14. Performance Comparison Study of SiC and Si Technology for an IPM Drive System

    SciTech Connect

    Chinthavali, Madhu Sudhan; Otaduy, Pedro J; Ozpineci, Burak

    2010-01-01

    The impact of the new SiC material based devices on a full system needs to be evaluated in order to assess the benefits of replacing Silicon (Si) devices with WBG devices. In this paper the results obtained with a full-system model simulated for an aggressive US06 drive cycle are presented. The system model includes a motor/generator model and inverter loss model developed using actual measured data. The results provide an insight to the difference in performance of a permanent magnet traction drive system using SiC versus Si devices.

  15. Producing composite materials based on ZrB2, ZrB2-SiC

    NASA Astrophysics Data System (ADS)

    Mirovoi, Yu A.; Burlachenko, A. G.; Buyakova, S. P.; Sevostiyanova, I. N.; Kulkov, S. N.

    2016-11-01

    The effect of mechanical treatment by planetary ball milling on the properties of hot pressed ZrB2 - SiC ceramics was studied. It has been shown that material densification after mechanical treatment is finished at initial stages of sintering process. Addition of SiC causes a substantial increase in density of the sample to 99% of the theoretical powder containing 20% of silicon carbide, in comparison with samples ZrB2 density not exceeding 76%. It has been shown that all defects which were accumulated during mechanical treatment anneal in hot pressure process and there are no any changes of CDD values in sintered ceramics.

  16. Role of Defects in Swelling and Creep of Irradiated SiC

    SciTech Connect

    Szlufarska, Izabela; Voyles, Paul; Sridharan, Kumar; Katoh, Yutai

    2016-01-16

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

  17. Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

    1991-01-01

    The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

  18. Acousto-electric transport in epitaxial monolayer graphene on SiC

    NASA Astrophysics Data System (ADS)

    Santos, P. V.; Schumann, T.; Oliveira, M. H.; Lopes, J. M. J.; Riechert, H.

    2013-06-01

    We report on the piezoelectric excitation and acoustic charge transport by gigahertz surface acoustic waves (SAWs) in epitaxial monolayer graphene (EG) on SiC. The GHz SAWs frequencies were generated by interdigital transducers fabricated on a piezoelectric island on the SiC substrate. Acoustic transport studies in a Hall bar geometry show that the propagating SAW field transports carriers in EG, the transport direction being determined by the direction of the acoustic beam. Carrier transport is driven by drift in the piezoelectric field induced by the SAW in EG.

  19. Rapid Fabrication of Lightweight SiC Optics using Reactive Atom Plasma (RAP) Processing

    NASA Technical Reports Server (NTRS)

    Fiske, Peter S.

    2006-01-01

    Reactive Atom Plasma (RAP) processing is a non-contact, plasma-based processing technology that can be used to generate damage-free optical surfaces. We have developed tools and processes using RAP that allow us to shape extremely lightweight mirror Surfaces made from extremely hard-to-machine materials (e.g. SiC). We will describe our latest results using RAP in combination with other technologies to produce finished lightweight SiC mirrors and also discuss applications for RAP in the rapid fabrication of mirror segments for reflective and grazing incidence telescopes.

  20. Stability and electronic properties of SiC nanowire adsorbed on MoS2 monolayer

    NASA Astrophysics Data System (ADS)

    Sharma, Munish; Pooja, Kumar, Ashok; Ahluwalia, P. K.

    2015-06-01

    Structural stability and electronic properties of silicon carbide (SiC) nano-wire on MoS2 monolayer are investigated within the framework of density functional theory (DFT). The preferred binding site for the SiC nano-wire is predicted to be hollow site of monolayer. In the electronic band structure the states in valence band near Fermi level are mainly due to nano-wire leading to reduction of band gap relative to monolayer. These results provide a platform for their applications in optoelectronic devices.

  1. Construction Progress of the S-IC Test Stand Complex Bunker House

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC stand, additional related facilities were built during this time frame. Built to the east of the S-IC stand, the block house served as the control room. To the south of the blockhouse was a newly constructed pump house used for delivering water to the S-IC stand during testing. North of the massive test stand, the F-1 Engine test stand was built for testing a single F-1 engine. Just southeast of the S-IC stand a concrete bunker house was constructed. The bunker housed

  2. Assessment of U.S. Manufacturing Capability for Next-Generation Wind Turbine Drivetrains

    SciTech Connect

    Cotrell, J.; Stelhy, T.

    2013-09-01

    Robust U.S. wind turbine manufacturing capabilities and supply chains are important for the United States to reduce the cost of electricity generated from wind turbines. These capabilities and supply chains are also critical to the invention and commercialization of new wind turbine technologies while providing high-quality jobs. The development of advanced drivetrain technologies for windturbine applications is advancing the state of the art for drivetrain design by producing higher capacity and operating reliability than conventional drivetrains. Advanced drivetrain technologies such as medium-speed and direct-drive generators, silicon-carbide (SiC) IGBT-based power electronics, and high torque density speed increasers require different manufacturing and supply chaincapabilities that present both risks and opportunities for U.S. wind turbine manufacturers and the wind industry as a whole. The primary objective of this project is to assess how advanced drivetrain technologies and trends will impact U.S. wind turbine manufacturing and its supply chains. The U.S. Department of Energy and other industry participants will use the information from this study toidentify domestic manufacturing gaps, barriers, and opportunities for developing U.S. wind turbine manufacturing capabilities and supply chains for next-generation drivetrain technologies. This report also includes recommendations for prioritizing technology areas for possible investments by public, private, or nonprofit entities that will reduce the cost of wind-generated electricity. Suchinvestments foster opportunities to invent and commercialize new wind turbine technologies, and provide high-quality jobs in the United States.

  3. Influence of surface roughness on mechanical properties of two computer-aided design/computer-aided manufacturing (CAD/CAM) ceramic materials.

    PubMed

    Flury, S; Peutzfeldt, A; Lussi, A

    2012-01-01

    The aim of this study was to evaluate the influence of surface roughness on surface hardness (Vickers; VHN), elastic modulus (EM), and flexural strength (FLS) of two computer-aided design/computer-aided manufacturing (CAD/CAM) ceramic materials. One hundred sixty-two samples of VITABLOCS Mark II (VMII) and 162 samples of IPS Empress CAD (IPS) were ground according to six standardized protocols producing decreasing surface roughnesses (n=27/group): grinding with 1) silicon carbide (SiC) paper #80, 2) SiC paper #120, 3) SiC paper #220, 4) SiC paper #320, 5) SiC paper #500, and 6) SiC paper #1000. Surface roughness (Ra/Rz) was measured with a surface roughness meter, VHN and EM with a hardness indentation device, and FLS with a three-point bending test. To test for a correlation between surface roughness (Ra/Rz) and VHN, EM, or FLS, Spearman rank correlation coefficients were calculated. The decrease in surface roughness led to an increase in VHN from (VMII/IPS; medians) 263.7/256.5 VHN to 646.8/601.5 VHN, an increase in EM from 45.4/41.0 GPa to 66.8/58.4 GPa, and an increase in FLS from 49.5/44.3 MPa to 73.0/97.2 MPa. For both ceramic materials, Spearman rank correlation coefficients showed a strong negative correlation between surface roughness (Ra/Rz) and VHN or EM and a moderate negative correlation between Ra/Rz and FLS. In conclusion, a decrease in surface roughness generally improved the mechanical properties of the CAD/CAM ceramic materials tested. However, FLS was less influenced by surface roughness than expected.

  4. Experimental evidence of α → β phase transformation in SiC quantum dots and their size-dependent luminescence

    SciTech Connect

    Guo, Xiaoxiao; Dai, Dejian; Fan, Baolu; Fan, Jiyang

    2014-11-10

    Phase transformation can occur among different SiC polytypes under extreme conditions such as high pressure or temperature. It remains unknown whether phase transformation can occur under normal conditions. We demonstrate that the α → β phase transformation can occur at ambient temperature and pressure in nanoscale SiC. The microstructural characterization and light absorption and emission spectroscopy demonstrate the occurrence of this phase transformation. It is found that the quantum-confinement luminescence dominates in larger SiC quantum dots (QDs) and the surface-defect luminescence dominates in ultrasmall SiC QDs. The rare phenomenon of multiple-phonon-assisted light absorption is observed in the SiC QDs.

  5. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    SciTech Connect

    Morse, K.; Balooch, M.; Hamza, A.V.; Belak, J.

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  6. SiC Multi-Chip Power Modules as Power-System Building Blocks

    NASA Technical Reports Server (NTRS)

    Lostetter, Alexander; Franks, Steven

    2007-01-01

    The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost

  7. Comparison of the dynamic fatigue behavior of two monolithic SiC and an Al{sub 2}O{sub 3}/SiC composite

    SciTech Connect

    Breder, K.; Tennery, V.J.

    1994-09-01

    Two monolithic silicon carbides, NT230 siliconized SiC from Norton Saint Gobain and sintered {beta}-SiC from Coors, and a silicon carbide particulate reinforced alumina ceramic composite from Lanxide, which all are candidate materials for pressurized heat exchangers in coal-fired power plants have been evaluated. The fast fracture flexure strength was measured as a function of temperature. All candidate materials retained a sufficient strength level up to 1400C. The susceptibility to slow crack growth (SCG) was evaluated by the dynamic fatigue method at 1100C and 1400C. None of the materials exhibited SCG at 1100C. At 1400C the siliconized SiC ceramic showed limited SCG and the composite ceramic exhibited creep damage when stressed to 50% of fast fracture strength at the intermediate and slow stressing rates. This prevented the evaluation of the SCG properties of this material at 1400C. Fractography supported the mechanical observations and with the exception of the specimens which exhibited creep damage, only the siliconized SiC showed a small SCG damage zone at long times at 1400C.

  8. Intermediate Temperature Stress Rupture of Woven SiC Fiber, BN Interphase, SiC Matrix Composites in Air

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Levine, Stanley (Technical Monitor)

    2000-01-01

    Tensile stress-rupture experiments were performed on woven Hi-Nicalon reinforced SiC matrix composites with BN interphases in air. Modal acoustic emission (AE) was used to monitor the damage accumulation in the composites during the tests and microstructural analysis was performed to determine the amount of matrix cracking that occurred for each sample. Fiber fractograph), was also performed for individual fiber failures at the specimen fracture surface to determine the strengths at which fibers failed. The rupture strengths were significantly worse than what would have been expected front the inherent degradation of the fibers themselves when subjected to similar rupture conditions. At higher applied stresses the rate of rupture "?as larger than at lower applied stresses. It was observed that the change in rupture rate corresponded to the onset of through-thickness cracking in the composites themselves. The primary cause of the sen,ere degradation was the ease with which fibers would bond to one another at their closest separation distances, less than 100 nanometers, when exposed to the environment. The near fiber-to-fiber contact in the woven tows enabled premature fiber failure over large areas of matrix cracks due to the stress-concentrations created b), fibers bonded to one another after one or a few fibers fail. i.e. the loss of global load sharing. An@, improvement in fiber-to-fiber separation of this composite system should result in improved stress- rupture properties. A model was den,eloped in order to predict the rupture life-time for these composites based on the probabilistic nature of indin,idual fiber failure at temperature. the matrix cracking state during the rupture test, and the rate of oxidation into a matrix crack. Also incorporated into the model were estimates of the stress-concentration that would occur between the outer rim of fibers in a load-bearing bundle and the unbridged region of a matrix crack after Xia et al. For the lower stresses

  9. Perspectives on Additive Manufacturing

    NASA Astrophysics Data System (ADS)

    Bourell, David L.

    2016-07-01

    Additive manufacturing (AM) has skyrocketed in visibility commercially and in the public sector. This article describes the development of this field from early layered manufacturing approaches of photosculpture, topography, and material deposition. Certain precursors to modern AM processes are also briefly described. The growth of the field over the last 30 years is presented. Included is the standard delineation of AM technologies into seven broad categories. The economics of AM part generation is considered, and the impacts of the economics on application sectors are described. On the basis of current trends, the future outlook will include a convergence of AM fabricators, mass-produced AM fabricators, enabling of topology optimization designs, and specialization in the AM legal arena. Long-term developments with huge impact are organ printing and volume-based printing.

  10. Northwest Manufacturing Initiative

    DTIC Science & Technology

    2013-03-26

    structural and armor alloys and their weldments, as well as the development of agile, reconfigurable automated manufacturing environments. These...included construction of a work cell around the Fanuc M16 robot to simulate the installation of a window or windshield panel. The vacuum grip end effecter...lower strength alloys would further increase productivity of the tandem wire time twin process. The use of a double -V- groove joint for both welding

  11. Advances in Additive Manufacturing

    DTIC Science & Technology

    2016-07-14

    casting molds for traditional casting processes on the battlefield, and 3) the use of recycled polymeric materials as feedstock for 3-D printers ...nondestructive characterization technique allows for 3D imaging that readily captures defects and voids on the conditions that the attenuation, which is...of 3D -printed structures. Analysis examples will include quantification of tolerance differences between the designed and manufactured parts, void

  12. Electrohydrodynamic Printing and Manufacturing

    NASA Technical Reports Server (NTRS)

    Aksay, Ilhan A. (Inventor); Saville, Dudley A. (Inventor); Poon, Hak Fei (Inventor); Korkut, Sibel (Inventor); Chen, Chuan-hua (Inventor)

    2014-01-01

    An stable electrohydrodynamic filament is obtained by causing a straight electrohydrodynamic filament formed from a liquid to emerge from a Taylor cone, the filament having a diameter of from 10 nm to 100.mu.m. Such filaments are useful in electrohydrodynamic printing and manufacturing techniques and their application in liquid drop/particle and fiber production, colloidal deployment and assembly, and composite materials processing.

  13. Simulator manufacturers' requirements

    NASA Technical Reports Server (NTRS)

    Reilly, David R.

    1987-01-01

    Simulator manufacturers must continue to provide the customers the latest wind shear models available for pilot training. The release of the JAWS data package enabled the provision of a much more realistic wind shear package to the customer rather than just the standard six SRI wind shear profiles currently in use. In this brief presentation, the steps taken in implementing the JAWS data into the FAA 727 simulator are highlighted.

  14. Advanced manufacturing: Technology diffusion

    SciTech Connect

    Tesar, A.

    1995-12-01

    In this paper we examine how manufacturing technology diffuses rom the developers of technology across national borders to those who do not have the capability or resources to develop advanced technology on their own. None of the wide variety of technology diffusion mechanisms discussed in this paper are new, yet the opportunities to apply these mechanisms are growing. A dramatic increase in technology diffusion occurred over the last decade. The two major trends which probably drive this increase are a worldwide inclination towards ``freer`` markets and diminishing isolation. Technology is most rapidly diffusing from the US In fact, the US is supplying technology for the rest of the world. The value of the technology supplied by the US more than doubled from 1985 to 1992 (see the Introduction for details). History shows us that technology diffusion is inevitable. It is the rates at which technologies diffuse to other countries which can vary considerably. Manufacturers in these countries are increasingly able to absorb technology. Their manufacturing efficiency is expected to progress as technology becomes increasingly available and utilized.

  15. Manufacturing a Superconductor in School.

    ERIC Educational Resources Information Center

    Barrow, John

    1989-01-01

    Described is the manufacture of a superconductor from a commercially available kit using equipment usually available in schools or easily obtainable. The construction is described in detail including equipment, materials, safety procedures, tolerances, and manufacture. (Author/CW)

  16. Dermatitis in rubber manufacturing industries

    SciTech Connect

    White, I.R.

    1988-01-01

    This review describes the history of rubber technology and the manufacturing techniques used in rubber manufacturing industries. The important aspects of the acquisition of allergic and irritant contact dermatitis within the industry are presented for the reader.

  17. Thermally Sprayed SiC Coatings for Offshore Wind Turbine Bearing Applications

    NASA Astrophysics Data System (ADS)

    Mubarok, F.; Armada, S.; Fagoaga, I.; Espallargas, N.

    2013-12-01

    Tribological tests were conducted on thermally sprayed silicon carbide (SiC) coatings to investigate its potential on reducing wear in offshore wind turbine bearings. The tests were carried out under dry conditions, 3.5 wt.% NaCl solution, and polyalfaolefin (PAO)-lubricated conditions. In order to obtain good quality SiC coatings, it is compulsory to modify the feedstock to limit SiC decomposition during atmospheric spraying process. The SiC feedstock used in this research has been modified with yttrium aluminum garnet (Y3Al5O12) oxide additives that originated from its metal salt precursors. High-frequency pulse detonation (HFPD) technique has been utilized to produce coatings of around 100 μm in thickness. The sliding tests have recorded the lowest coefficient of friction (COF) of 0.15 in PAO condition and the highest COF of 0.50 in dry sliding. The wear tracks morphology show that during dry sliding test, the coatings experience abrasive wear accompanied by tribo-oxidation reaction that initiates crack formation along the splat boundaries. On the other two sliding test conditions (NaCl and PAO), polishing of asperities and some grain plowing from the splats were observed in the wear tracks. Tribochemical wear was found to be the main mechanism producing smooth surfaces. Nevertheless, in all cases, the wear losses were negligible.

  18. Growth of SiC nanowires on wooden template surface using molten salt media

    NASA Astrophysics Data System (ADS)

    Ding, Jun; Zhu, Hongxi; Li, Guangqiang; Deng, Chengji; Li, Jun

    2014-11-01

    This paper examines the growth of SiC nanowires on a wooden template surface through the reaction of wooden template/silicon composites in static argon atmosphere, using molten salt media. The effects of temperature and salt/Si ratio on the growth of wooden template were investigated. Morphology and structure of the biomorphic SiC/C ceramics were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and thermogravimetric analysis (TGA). The pore size distribution within the porous SiC/C ceramics was investigated using automatic mercury porosimetry. The results show that the biomorphic cellular morphology of wooden template was remained in the porous SiC ceramic with high precision that consists of β-SiC with traces of α-SiC. SiC in the wooden template exists in the cellular pores in the form of nanowires. The SiC nanowires were formed at about 1250 °C by molten salt reaction between Si and C during the wooden-to-ceramic conversion.

  19. An Investigation of Abrasive Wear Behaviour of Al 2014-SiC Composites

    NASA Astrophysics Data System (ADS)

    Çalin, Recep; Cilasun, Niyazi Selçuk

    2015-04-01

    In this study, the effects of SiC reinforcement volume fractions on hardness, porosity and abrasive wear behaviour were examined in Al 2014-SiC (<92.3 μm) reinforced metal matrix composites (MMCs) of 3%, 6% and 12% reinforcement-volume (R-V) ratios produced by melt-stirring. Abrasive wear tests were carried out by 320 mesh Al2O3 abrasive paper and a pin-on-disc wear test apparatus, under 10N, 20N and 30N load, and at 0.2 ms-1 sliding speed. The same specimens were tested by 150, 240 and 320 mesh abrasive paper at 0.2 ms-1 sliding speed, under 10N, 20N and 30N load. After the tests, the microstructures of the worn surfaces were examined with scanning electron microscope (SEM) studies and EDS analyses. Besides, the amount of hardness and porosity of the specimens were identified. It was recorded that the amounts of hardness and porosity increases as the SiC reinforcement in the composite increases. The highest amount of abrasive wear was recorded in the specimens with 3% reinforcements. It was identified that the amount of abrasive wear decreases while the SiC reinforcement in the composite structure increases by volume, and that the amount of porosity and reinforcement volume (R-V) ratio are important parameters in abrasive wear.

  20. Characterization and Comparison of Planar and Trench Silicon Carbide (SiC) Power MOSFETs

    SciTech Connect

    Wang, Zhiqiang; Chinthavali, Madhu Sudhan; Campbell, Steven L

    2016-01-01

    This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25 oC to 175 oC. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.

  1. Synthesis and characterization of AA 6061- Graphene - SiC hybrid nanocomposites processed through microwave sintering

    NASA Astrophysics Data System (ADS)

    Jauhari, Siddhartha; Prashantha Kumar, H. G.; Xavior, . M. Anthony

    2016-09-01

    As one of the most essential industrial and engineering materials, Aluminum alloy 6061 have been extensively used in automobile industries and many engineering applications due to its impending properties like low density, good structural rigidity, feasibility to incorporate and enhance the strength by addition of various reinforcing materials. The essential criteria in enhancing the properties without sacrificing the ductility is always challenging in Aluminum and its alloys based composites. In the recent years, enormous research has been carried on ceramic based and carbon based reinforcement materials used in Aluminum metal matrix composites. But the combination of both is never tried so far due to lack of processing methods. The current research work is carried out to process, synthesize and perform the characterization of Al 6061 matrix nanocomposites with Graphene of flake size 10 μm and SiC of particle size 10 pm as reinforcement combinations in various proportions (weight percentage) which are carried out through powder metallurgy (PM) approach. The powders are processed through ultrasonic liquid processing method and the mixtures were ball milled by adding SiC particles followed by uniaxial hot compaction. Thus prepared compacts are sintered (conventional and microwave) and mechanical properties like hardness, density are investigated as a function of Graphene and SiC concentrations (weight fraction). Relevant strengthening mechanism involved in the Al6061 - Graphene -SiC composites in comparison with monolithic Al 6061 alloy were discussed.

  2. Time-Domain Thermoreflectance Measurements of Thermal Transport in Amorphous SiC Thin Films

    NASA Astrophysics Data System (ADS)

    Daly, Brian; Hondongwa, Donald; King, Sean

    2010-03-01

    We present ultrafast optical pump-probe measurements of thermal transport in a series of amorphous SiC samples. The samples were grown on Si wafers by plasma enhanced chemical vapor deposition utilizing various combinations of methylsilanes and H2 and He diluent gases. The sample films were well characterized and found to have densities (1.3 -- 2.3 g cm-3) and dielectric constants (4.0 -- 7.2) that spanned a wide range of values. Prior to their measurement, the samples were coated with 40-70 nm of polycrystalline Al. The pump-probe measurements were performed at room temperature using a modelocked Ti:sapphire laser that produced sub-picosecond pulses of a few nJ. The pulses heat the Al coating, causing a transient reflectivity change. As the Al film cools into the SiC film, the reflectivity change can be measured, giving a measure of the thermal effusivity of the SiC film. We then extract values for the thermal conductivity of the SiC films and find that it varies from less than half of the thermal conductivity of amorphous SiO2 for the lower density materials to somewhat larger than amorphous SiO2 for the highest density films.

  3. SiC MODIFICATIONS TO MELCOR FOR SEVERE ACCIDENT ANALYSIS APPLICATIONS

    SciTech Connect

    Brad J. Merrill; Shannon M Bragg-Sitton

    2013-09-01

    The Department of Energy (DOE) Office of Nuclear Energy (NE) Light Water Reactor (LWR) Sustainability Program encompasses strategic research focused on improving reactor core economics and safety margins through the development of an advanced fuel cladding system. The Fuels Pathway within this program focuses on fuel system components outside of the fuel pellet, allowing for alteration of the existing zirconium-based clad system through coatings, addition of ceramic sleeves, or complete replacement (e.g. fully ceramic cladding). The DOE-NE Fuel Cycle Research & Development (FCRD) Advanced Fuels Campaign (AFC) is also conducting research on materials for advanced, accident tolerant fuels and cladding for application in operating LWRs. To aide in this assessment, a silicon carbide (SiC) version of the MELCOR code was developed by substituting SiC in place of Zircaloy in MELCOR’s reactor core oxidation and material property routines. The purpose of this development effort is to provide a numerical capability for estimating the safety advantages of replacing Zr-alloy components in LWRs with SiC components. This modified version of the MELCOR code was applied to the Three Mile Island (TMI-2) plant accident. While the results are considered preliminary, SiC cladding showed a dramatic safety advantage over Zircaloy cladding during this accident.

  4. Temperature dependence of a microstructured SiC coherent thermal source

    NASA Astrophysics Data System (ADS)

    Hervé, Armande; Drévillon, Jérémie; Ezzahri, Younès; Joulain, Karl; De Sousa Meneses, Domingos; Hugonin, Jean-Paul

    2016-09-01

    By ruling a grating on a polar material that supports surface phonon-polaritons such as silicon carbide (SiC), it is possible to create directional and monochromatic thermal sources. So far, most of the studies have considered only materials with room temperature properties as the ones tabulated in Palik's handbooks. Recently, measurements have provided experimental data of the SiC dielectric function at different temperatures. Here we study, numerically, the effect of the temperature dependence of the dielectric function on the thermal emission of SiC gratings (1D grating, in a first approach), heated at different temperatures. When materials are heated, the position of the grating emissivity peak shifts towards higher wavelength values. A second consequence of the temperature dependence of optical properties is that room temperature designed gratings are not optimal for higher temperatures. However, by modifying the grating parameters, it is possible to find an emission peak, with a maximum of emissivity near 1, for each temperature. We tried first to catch some patterns in the emissivity variation. Then, we obtained a grating, which leads to an optimum emissivity for all available temperature data for SiC.

  5. Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3 C -SiC

    NASA Astrophysics Data System (ADS)

    Hu, Xunxiang; Koyanagi, Takaaki; Katoh, Yutai; Wirth, Brian D.

    2017-03-01

    Positron annihilation spectroscopy characterization results for neutron-irradiated 3 C -SiC are described here, with a specific focus on explaining the size and character of vacancy clusters as a complement to the current understanding of the neutron irradiation response of 3 C -SiC. Positron annihilation lifetime spectroscopy was used to capture the irradiation temperature and dose dependence of vacancy defects in 3 C -SiC following neutron irradiation from 0.01 to 31 dpa in the temperature range from 380°C to 790°C . The neutral and negatively charged vacancy clusters were identified and quantified. The results suggest that the vacancy defects that were measured by positron annihilation spectroscopy technique contribute very little to the transient swelling of SiC. In addition, coincidence Doppler broadening measurement was used to investigate the chemical identity surrounding the positron trapping sites. It was found that silicon vacancy-related defects dominate in the studied materials and the production of the antisite defect CSi may result in an increase in the probability of positron annihilation with silicon core electrons.

  6. Modeling and Testing Miniature Torsion Specimens for SiC Joining Development Studies for Fusion

    SciTech Connect

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Roosendaal, Timothy J.; Borlaug, Brennan A.; Ferraris, Monica; Ventrella, Andrea; Katoh, Yutai

    2015-08-19

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with CVD-SiC and tested in torsion-shear prior to and after neutron irradiation. However, many of these miniature torsion specimens fail out-of-plane within the CVD-SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated joint strengths to determine the effects of the irradiation. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated joint test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.

  7. TEM Observation of the Ti Interlayer Between SiC Substrates During Diffusion Bonding

    NASA Technical Reports Server (NTRS)

    Tsuda, Hiroshi; Mori, Shigeo; Halbig, Michael C.; Singh, Mori

    2012-01-01

    Diffusion bonding was carried out to join SiC to SiC substrates using titanium interlayers. In this study, 10 m and 20 m thick physical vapor deposited (PVD) Ti surface coatings, and 10 and 20 m thick Ti foils were used. Diffusion bonding was performed at 1250 C for PVD Ti coatings and 1200 C for Ti foil. This study investigates the microstructures of the phases formed during diffusion bonding through TEM and selected-area diffraction analysis of a sample prepared with an FIB, which allows samples to be taken from the reacted area. In all samples, Ti3SiC2, Ti5Si3Cx and TiSi2 phases were identified. In addition, TiC and unknown phases also appeared in the samples in which Ti foils were used as interlayers. Furthermore, Ti3SiC2 phases show high concentration and Ti5Si3Cx formed less when samples were processed at a higher temperature and thinner interlayer samples were used. It appears that the formation of microcracks is caused by the presence of intermediate phase Ti5Si3Cx, which has anisotropic thermal expansion, and by the presence of an unidentified Ti-Si-C ternary phase with relatively low Si content.

  8. Temperature Dependence of Attenuation of Coplanar Waveguide on 4H High Resistivity SIC Through 540C

    NASA Technical Reports Server (NTRS)

    Ponchak, G. E.; Schwartz, Z.; Alterovitz, S. A.; Downey, A. N.; Freeman, J. C.

    2003-01-01

    For the first time, the temperature and frequency dependence of the attenuation of a Coplanar Waveguide (CPW) on 4H, High Resistivity Sic substrate is reported. The low frequency attenuation increases by 2 dB/cm at 500 C and the high frequency attenuation increases by 3.3 dB/cm at 500 C compared to room temperature.

  9. CO oxidation catalyzed by silicon carbide (SiC) monolayer: A theoretical study.

    PubMed

    Wang, Nan; Tian, Yu; Zhao, Jingxiang; Jin, Peng

    2016-05-01

    Developing metal-free catalysts for CO oxidation has been a key scientific issue in solving the growing environmental problems caused by CO emission. In this work, the potential of the silicon carbide (SiC) monolayer as a metal-free catalyst for CO oxidation was systematically explored by means of density functional theory (DFT) computations. Our results revealed that CO oxidation reaction can easily proceed on SiC nanosheet, and a three-step mechanism was proposed: (1) the coadsorption of CO and O2 molecules, followed by (2) the formation of the first CO2 molecule, and (3) the recovery of catalyst by a second CO molecule. The last step is the rate-determining one of the whole catalytic reaction with the highest barrier of 0.65eV. Remarkably, larger curvature is found to have a negative effect on the catalytic performance of SiC nanosheet for CO oxidation. Therefore, our results suggested that flat SiC monolayer is a promising metal-free catalyst for CO oxidation.

  10. Zirconia toughened SiC whisker reinforced alumina composites small business innovation research

    NASA Technical Reports Server (NTRS)

    Loutfy, R. O.; Stuffle, K. L.; Withers, J. C.; Lee, C. T.

    1987-01-01

    The objective of this phase 1 project was to develop a ceramic composite with superior fracture toughness and high strength, based on combining two toughness inducing materials: zirconia for transformation toughening and SiC whiskers for reinforcement, in a controlled microstructure alumina matrix. The controlled matrix microstructure is obtained by controlling the nucleation frequency of the alumina gel with seeds (submicron alpha-alumina). The results demonstrate the technical feasibility of producing superior binary composites (Al2O3-ZrO2) and tertiary composites (Al2O3-ZrO2-SiC). Thirty-two composites were prepared, consolidated, and fracture toughness tested. Statistical analysis of the results showed that: (1) the SiC type is the key statistically significant factor for increased toughness; (2) sol-gel processing with a-alumina seed had a statistically significant effect on increasing toughness of the binary and tertiary composites compared to the corresponding mixed powder processing; and (3) ZrO2 content within the range investigated had a minor effect. Binary composites with an average critical fracture toughness of 6.6MPam sup 1/2, were obtained. Tertiary composites with critical fracture toughness in the range of 9.3 to 10.1 MPam sup 1/2 were obtained. Results indicate that these composites are superior to zirconia toughened alumina and SiC whisker reinforced alumina ceramic composites produced by conventional techniques with similar composition from published data.

  11. The correlation of epitaxial graphene properties and morphology of SiC (0001)

    SciTech Connect

    Guo, Y.; Guo, L. W. E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L.; Yang, R.; Chen, X. L. E-mail: xlchen@iphy.ac.cn

    2014-01-28

    The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

  12. Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

    NASA Technical Reports Server (NTRS)

    Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

    2011-01-01

    In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

  13. Effect of SiC interlayer between Ti6Al4V alloy and hydroxyapatite films.

    PubMed

    Azem, Funda Ak; Birlik, Isil; Braic, Viorel; Toparli, Mustafa; Celik, Erdal; Parau, Anca; Kiss, Adrian; Titorencu, Irina; Vladescu, Alina

    2015-04-01

    Bioactive coatings are frequently used to improve the osseointegration of the metallic implants used in dentistry or orthopaedics. Among different types of bioactive coatings, hydroxyapatite (Ca10(PO4)6(OH)2) is one of the most extensively used due to its chemical similarities to the components of bones and teeth. In this article, production and characterization of hydroxyapatite films deposited on Ti6Al4V alloy prepared by magnetron sputtering were reported. Besides, SiC was deposited on substrate surface to study the interlayer effect. Obtained coatings were annealed at 600 °C for 30 and 120 min in a mixed atmosphere of N2 + H2O vapours with the heating rate of 12 °C min(-1). The effects of SiC interlayer and heat treatment parameters on the structural, mechanical and corrosion properties were investigated. After heat treatment process, the crystalline hydroxyapatite was obtained. Additionally, cell viability tests were performed. The results show that the presence of the SiC interlayer contributes a decrease in surface roughness and improves the mechanical properties and corrosion performance of the hydroxyapatite coatings. Biological properties were not affected by the presence of the SiC interlayer.

  14. Magnetic anisotropy of rare-earth magnets calculated by SIC and OEP

    NASA Astrophysics Data System (ADS)

    Akai, Hisazumi; Ogura, Masako

    We have pointed out in our previous study that the chemical bonding between N and Sm plays an important role in the magnetic anisotropy change of Sm2Fe17 from in-plane to uniaxial ones caused by the introducing of N. This effect of N insertion was discussed in terms of change in the electronic structure calculated in the framework of LDA+SIC. The main issue here is whether the 4f states are dealt with properly in SIC. In the present study, we examine the applicability of SIC for the evaluation of the magnetic anisotropy of rare-earth (RE) magnets by comparing the results with various methods, in particular, the optimized effective potential (OEP) method. In this study, OEP is applied only on the RE sites. Admittedly, this is a drawback from the viewpoint of the consistent treatment of uncertainly inherent in the so-called KLI (Krieger-Li-Iafrate) constants. Putting this aside for the moment, we have calculated the electronic structure of RE magnets R2Fe17Nx and RCo5 (R=light RE), by OEP with exact-exchange (EXX) combined with Colle-Salvetti correlation. Our preliminary results have shown considerable differences between the SIC and OEP calculations. We will discuss the meaning of this discrepancy. This work was supported by the Elements Strategy Initiative Center for Magnetic Materials under the outsourcing project of MEXT and by a Grant-in-Aid for Scientific Research (No. 26400330) from MEXT.

  15. Simulating structural transitions with kinetic Monte Carlo: The case of epitaxial graphene on SiC

    NASA Astrophysics Data System (ADS)

    Deretzis, I.; La Magna, A.

    2016-03-01

    We have developed a kinetic Monte Carlo numerical scheme, specifically suited to simulate structural transitions in crystalline materials, and implemented it for the case of epitaxial graphene on SiC. In this process, surface Si atoms selectively sublimate, while the residual C atoms rearrange from a position occupied in the SiC hexagonal lattice to the graphene honeycomb structure, modifying their hybridization (from s p3 to s p2 ) and bond partners (from Si-C to C-C). The model is based on the assumption that the Monte Carlo particles follow the evolution of their reference crystal until they experience a thermally activated reversible transition to another crystal structure. We demonstrate that, in a formulation based on three parallel lattices, the method is able to recover the complex evolution steps of epitaxial graphene on SiC. Moreover, the simulation results are in noteworthy agreement with the overall experimental scenario, both when varying the structural properties of the material (e.g., the initial surface configuration or polarity) as well as the process conditions (e.g., the temperature and pressure).

  16. Growth and interface phase stability of barium hexaferrite films on SiC(0001)

    SciTech Connect

    Lazarov, V. K.; Hasnip, P. J.; Cai, Z.; Ziemer, K. S.; Yoshida, K.

    2011-04-01

    We have studied interface phase stability of the BaFe{sub 12}O{sub 19} (BaM) thin films grown by molecular beam epitaxy on SiC(0001). The films were epitaxially grown with the following crystallographic relation: BaM(0001) parallel SiC(0001) and BaM(11-20) parallel SiC(11-20). High resolution TEM reveals the existence of two interfacial bands with different structure than BaM. The first band close to SiC is SiO{sub x} while the second has spinel structure and chemically corresponds to Fe{sub 3}O{sub 4}. These findings suggest that at initial growth stages Fe{sub 3}O{sub 4} is more favorable than BaM. Density functional theory modeling of the phase stability of BaM compared to Fe{sub 3}O{sub 4} shows that BaM is only stable at high oxygen partial pressures.

  17. SiC lightweight telescopes for advanced space applications. II - Structures technology

    NASA Technical Reports Server (NTRS)

    Anapol, Michael I.; Hadfield, Peter; Tucker, Theodore

    1992-01-01

    A critical technology area for lightweight SiC-based telescope systems is the structural integrity and thermal stability over spaceborne environmental launch and thermal operating conditions. Note, it is highly desirable to have an inherently athermal design of both SiC mirrors and structure. SSG has developed an 8 inch diameter SiC telescope system for brassboard level optical and thermal testing. The brassboard telescope has demonstrated less than 0.2 waves P-V in the visible wavefront change over +50 C to -200 C temperature range. SSG has also fabricated a SiC truss structural assembly and successfully qualified this hardware at environmental levels greater than 3 times higher than normal Delta, Titan, and ARIES launch loads. SSG is currently developing two SiC telescopes; an 20 cm diameter off-axis 3 mirror re-imaging and a 60 cm aperture on-axis 3 mirror re-imager. Both hardware developments will be tested to flight level environmental, optical, and thermal specifications.

  18. Energy 101: Clean Energy Manufacturing

    ScienceCinema

    None

    2016-07-12

    Most of us have a basic understanding of manufacturing. It's how we convert raw materials, components, and parts into finished goods that meet our essential needs and make our lives easier. But what about clean energy manufacturing? Clean energy and advanced manufacturing have the potential to rejuvenate the U.S. manufacturing industry and open pathways to increased American competitiveness. Watch this video to learn more about this exciting movement and to see some of these innovations in action.

  19. Energy 101: Clean Energy Manufacturing

    SciTech Connect

    2015-07-09

    Most of us have a basic understanding of manufacturing. It's how we convert raw materials, components, and parts into finished goods that meet our essential needs and make our lives easier. But what about clean energy manufacturing? Clean energy and advanced manufacturing have the potential to rejuvenate the U.S. manufacturing industry and open pathways to increased American competitiveness. Watch this video to learn more about this exciting movement and to see some of these innovations in action.

  20. Photoelectrochemical etching of silicon carbide (SiC) and its characterization

    NASA Technical Reports Server (NTRS)

    Collins, D. M.; Harris, G. L.; Wongchotigul, K.

    1995-01-01

    Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

  1. Construction Progress of the S-IC and F-1 Test Stands

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the S-IC test stand, related facilities were built during this time. Built to the north of the massive S-IC test stand, was the F-1 Engine test stand. The F-1 test stand, a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base, was designed to assist in the development of the F-1 Engine. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of

  2. Composites Manufacturing Education and Technology Facility Expedites Manufacturing Innovation

    SciTech Connect

    2017-01-01

    The Composites Manufacturing Education and Technology facility (CoMET) at the National Wind Technology Center at the National Renewable Energy Laboratory (NREL) paves the way for innovative wind turbine components and accelerated manufacturing. Available for use by industry partners and university researchers, the 10,000-square-foot facility expands NREL's composite manufacturing research capabilities by enabling researchers to design, prototype, and test composite wind turbine blades and other components -- and then manufacture them onsite. Designed to work in conjunction with NREL's design, analysis, and structural testing capabilities, the CoMET facility expedites manufacturing innovation.

  3. Out of bounds additive manufacturing

    SciTech Connect

    Holshouser, Chris; Newell, Clint; Palas, Sid; Love, Lonnie J.; Kunc, Vlastimil; Lind, Randall F.; Lloyd, Peter D.; Rowe, John C.; Blue, Craig A.; Duty, Chad E.; Peter, William H.; Dehoff, Ryan R.

    2013-03-01

    Lockheed Martin and Oak Ridge National Laboratory are working on an additive manufacturing system capable of manufacturing components measured not in terms of inches or feet, but multiple yards in all dimensions with the potential to manufacture parts that are completely unbounded in size.

  4. Decision Guidance for Sustainable Manufacturing

    ERIC Educational Resources Information Center

    Shao, Guodong

    2013-01-01

    Sustainable manufacturing has significant impacts on a company's business performance and competitiveness in today's world. A growing number of manufacturing industries are initiating efforts to address sustainability issues; however, to achieve a higher level of sustainability, manufacturers need methodologies for formally describing, analyzing,…

  5. 77 FR 56811 - Manufacturing Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-14

    ... International Trade Administration Manufacturing Council AGENCY: International Trade Administration, U.S. Department of Commerce. ACTION: Notice of an Opportunity to Apply for Membership on the Manufacturing Council... ] Manufacturing Council (Council) for a two-year term to begin in fall 2012. The purpose of the Council is...

  6. 76 FR 33244 - Manufacturing Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-08

    ... International Trade Administration Manufacturing Council AGENCY: International Trade Administration, U.S. Department of Commerce. ACTION: Notice of an Opportunity To Apply for Membership on the Manufacturing Council... Manufacturing Council (Council). The purpose of the Council is to advise the Secretary of Commerce on...

  7. 77 FR 2275 - Manufacturing Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-17

    ... International Trade Administration Manufacturing Council AGENCY: International Trade Administration, U.S. Department of Commerce. ACTION: Notice of an opportunity to apply for membership on the Manufacturing Council... Manufacturing Council (Council). The purpose of the Council is to advise the Secretary of Commerce on...

  8. 77 FR 69794 - Manufacturing Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-21

    ... International Trade Administration Manufacturing Council AGENCY: International Trade Administration, U.S... Manufacturing Council. SUMMARY: On September 14, 2012, the Department of Commerce's International Trade... appointment of 25 members of the Manufacturing Council (Council) for a two-year term to begin in fall...

  9. 77 FR 66179 - Manufacturing Council

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-02

    ... International Trade Administration Manufacturing Council AGENCY: International Trade Administration, U.S... manufacturing council. SUMMARY: On September 14, 2012, the Department of Commerce's International Trade... of 25 members of the Manufacturing Council (Council) for a two-year term to begin in fall 2012....

  10. Manufacturers' Views of Vocational Education.

    ERIC Educational Resources Information Center

    Nunez, Ann R.; Russell, Jill Frymier

    A survey of manufacturers was conducted by the National Association of Manufacturers (NAM) and the National Center for Research in Vocational Education to elicit the views of NAM members about vocational education--the effectiveness of vocational education, the collaborative activities between manufacturers and vocational education, and…

  11. Photon absorption and emission properties of 7 Å SiC nanoclusters: Electronic gap, surface state, and quantum size effect

    NASA Astrophysics Data System (ADS)

    Guo, Xiaoxiao; Chen, Xifang; Fan, Baolu; Zhang, Yumeng; Fan, Jiyang

    2016-07-01

    People know little experimentally about the physical properties of the SiC nanoclusters with sizes of a couple of angstroms. Herein, we study the electronic structure and light absorption/emission properties of the SiC nanoclusters with an average diameter of 7 Å that are fabricated by diminishing the sizes of the SiC microcrystals under high pressure and high temperature. The results reveal that the SiC nanoclusters have an indirect energy gap of 5.1 eV. Unlike the case of larger SiC nanocrystals, the luminescence of the SiC nanoclusters is dominated by two types of oxygen-related surface defects, and the maximum of their photoluminescence/photoluminescence excitation spectrum lies at 4.1/3.3 and 3.8/3.0 eV, respectively. The energy gap of the SiC nanoparticles with reference to bulk value is found to be inversely proportional to the diameter to the power 0.97, which shows slower increase of energy gap with decreasing size than what is predicted by using the first-principles calculations.

  12. Fabrication and measurement of hoop strength of SiC triplex tube for nuclear fuel cladding applications

    NASA Astrophysics Data System (ADS)

    Kim, Daejong; Lee, Hyun-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2015-03-01

    The SiC ceramics are under investigation for the fuel cladding in the light water nuclear reactors because of its excellent high temperature strength and corrosion resistance against hot steam under the severe accident conditions. In this study, the SiC triplex tubes consisting of a SiC inner layer, a SiC/PyC/SiC intermediate layer, and a SiC outer layer were fabricated by the chemical vapor processes. The hoop strength and fracture behaviors of the SiC triplex tube were investigated. The SiC triplex tubes fabricated at the high ratio of H2/MTS had a quite high average strength with a relatively small standard deviation. The hoop strength of the composite tubes tends to increase with the volume fraction of the reinforced fibers. The highest fiber volume fraction was obtained using Tyranno SA3-0.8k with the dense winding patterns such as bamboo-like mosaic pattern, which resulted in the high hoop strength compared to other fibers of Tyranno SA3-1.6k and Hi-Nicalon Type S. Hoop strength also increased slightly as the winding angle increased from 45° to 65°. Fracture behaviors of the SiC triplex tube were investigated via the observation of microstructure of the failed samples.

  13. Evaluation of sintering effects on SiC incorporated UO2 kernels under Ar and Ar-4%H2 environments

    SciTech Connect

    Silva, Chinthaka M; Lindemer, Terrence; Hunt, Rodney Dale; Collins, Jack Lee; Terrani, Kurt A; Snead, Lance Lewis

    2013-01-01

    Silicon carbide (SiC) is suggested as an oxygen getter in UO2 kernels used for TRISO particle fuels to lower oxygen potential and prevent kernel migration during irradiation. Scanning electron microscopy and X-ray diffractometry analyses performed on sintered kernels verified that internal gelation process can be used to incorporate SiC in urania fuel kernels. Sintering in either Ar or Ar-4%H2 at 1500 C lowered the SiC content in the UO2 kernels to some extent. Formation of UC was observed as the major chemical phase in the process, while other minor phases such as U3Si2C2, USi2, U3Si2, and UC2 were also identified. UC formation was presumed to be occurred by two reactions. The first was the SiC reaction with its protective SiO2 oxide layer on SiC grains to produce volatile SiO and free carbon that subsequently reacted with UO2 to form UC. The second process was direct UO2 reaction with SiC grains to form SiO, CO, and UC, especially in Ar-4%H2. A slightly higher density and UC content was observed in the sample sintered in Ar-4%H2, but the use of both atmospheres produced kernels with ~95% of theoretical density. It is suggested that incorporating CO in the sintering gas would prevent UC formation and preserve the initial SiC content.

  14. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  15. Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films

    NASA Astrophysics Data System (ADS)

    Chen, Yin-Yu; Chao, Der-Sheng; Tsai, Hsu-Sheng; Liang, Jenq-Horng

    2016-04-01

    The mechanisms of photoluminescence (PL) originating from Si+/C+ implanted SiO2 are still unclear and need to be clarified. Thus, the purpose of this study is to thoroughly investigate the effects of ion implantation and post-annealing temperature on microstructures and PL characteristics of the Si+/C+ implanted SiO2 films. A comparative analysis was also conducted to clarify the different optical properties between the Si+ and Si+/C+ implanted SiO2 films. In this study, thermally-grown SiO2 films on Si substrates were used as the matrix materials. The Si+ ions and C+ ions were separately implanted into the SiO2 films at room temperature. After ion implantation, the post-annealing treatments were carried out using the furnace annealing (FA) method at various temperatures (600-1100 °C) for 1 h in a N2 ambient. The PL characteristics of the implanted SiO2 films were analyzed using a fluorescence spectrophotometer. The results revealed that the distinct PL peaks were observed at approximately 310, 450 and 650 nm in the Si+-implanted SiO2 films, which can be attributed to the defects, the so-called oxygen deficiency centers (ODCs) and non-bridging oxygen hole centers (NBOHCs), in the materials. In contrast to the Si+ ion implantation, the SiO2 films which were sequentially implanted with Si+ and C+ ions and annealed at 1100 °C can emit white light corresponding to the PL peaks located at around 420, 520 and 720 nm, those can be assigned to the Si-C bonding, C-C graphite-like structure (sp2), and Si nanocrystals, respectively. Moreover, a correlation between the optical properties, microstructures, and bonding configurations of the Si+/C+ implanted SiO2 films was also established in this study.

  16. Diffusion of fission products and radiation damage in SiC

    NASA Astrophysics Data System (ADS)

    Malherbe, Johan B.

    2013-11-01

    A major problem with most of the present nuclear reactors is their safety in terms of the release of radioactivity into the environment during accidents. In some of the future nuclear reactor designs, i.e. Generation IV reactors, the fuel is in the form of coated spherical particles, i.e. TRISO (acronym for triple coated isotropic) particles. The main function of these coating layers is to act as diffusion barriers for radioactive fission products, thereby keeping these fission products within the fuel particles, even under accident conditions. The most important coating layer is composed of polycrystalline 3C-SiC. This paper reviews the diffusion of the important fission products (silver, caesium, iodine and strontium) in SiC. Because radiation damage can induce and enhance diffusion, the paper also briefly reviews damage created by energetic neutrons and ions at elevated temperatures, i.e. the temperatures at which the modern reactors will operate, and the annealing of the damage. The interaction between SiC and some fission products (such as Pd and I) is also briefly discussed. As shown, one of the key advantages of SiC is its radiation hardness at elevated temperatures, i.e. SiC is not amorphized by neutrons or bombardment at substrate temperatures above 350 °C. Based on the diffusion coefficients of the fission products considered, the review shows that at the normal operating temperatures of these new reactors (i.e. less than 950 °C) the SiC coating layer is a good diffusion barrier for these fission products. However, at higher temperatures the design of the coated particles needs to be adapted, possibly by adding a thin layer of ZrC.

  17. Construction Progress of the S-IC Test Stand-Excavation

    NASA Technical Reports Server (NTRS)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In this photo, taken July 13, 1961, progress is made with the excavation and preparation of the S-IC test stand site.

  18. Properties of hydrostatically extruded in situ MgB2 wires doped with SiC

    NASA Astrophysics Data System (ADS)

    Pachla, W.; Morawski, A.; Kovác, P.; Husek, I.; Mazur, A.; Lada, T.; Diduszko, R.; Melisek, T.; Strbík, V.; Kulczyk, M.

    2006-01-01

    In situ nano-SiC doped MgB2 wires were fabricated from MgH2 and B powders. Hydrostatic extrusion, followed by rotary swaging and two-axial rolling, were applied as the forming processes. The critical current Jc of MgB2 wires, made from MgH2 and B powders, was significantly improved by nano-SiC doping. Nano-SiC doping substantially increased the upper critical (irreversibility) field Bc 2 above 20 T. The maximum Jc values were measured for samples having 6 at.% SiC in low field and for those having 12 at.% SiC in high field, above 10 T. During the final sintering at 670 °C, the SiC decomposed and formed an Si-rich layer at the inner circumference of the Fe sheath. The composition of the core of SiC doped wires is more inhomogeneous in comparison to undoped ones, with MgO, Mg2Si and probably Mg2SiO4 as the major segregated phases. Strong segregation of Si within the MgB2 core was also observed. The highest Tc-mid = 39.3 K was measured for undoped wire. For the optimal SiC doping amount ~6 at.%, at high field, there was no difference in Jc between hydrostatically extruded and hydrostatically extruded plus two-axially rolled wire. This can be attributed to the beneficial effect of hydrostatic extrusion, which causes higher density of the core in comparison to traditional deformation processes.

  19. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

    SciTech Connect

    Gu, Z; Du, Li; Edgar, J H; Payzant, E Andrew; Walker, Larry R; Liu, R; Engelhard, M H

    2005-01-01

    AlN-SiC alloy crystals, with a thickness greater than 500μm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8 or 3.68 ) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlNSiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). Xray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 10^6cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

  20. Fluorescent SiC with pseudo-periodic moth-eye structures

    NASA Astrophysics Data System (ADS)

    Ou, Yiyu; Aijaz, Imran; Ou, Haiyan

    2012-10-01

    White light-emitting diodes (LEDs) consisting of a nitride-based blue LED chip and phosphor are very promising candidates for the general lighting applications as energy-saving sources. Recently, donor-acceptor doped fluorescent SiC has been proven as a highly efficient wavelength converter material much superior to the phosphors in terms of high color rendering index value and long lifetime. The light extraction efficiency of the fluorescent SiC based all semiconductor LED light sources is usually low due to the large refractive index difference between the semiconductor and air. In order to enhance the extraction efficiency, we present a simple method to fabricate the pseudo-periodic moth-eye structures on the surface of the fluorescent SiC. A thin gold layer is deposited on the fluorescent SiC first. Then the thin gold layer is treated by rapid thermal processing. After annealing, the thin gold layer turns into discontinuous nano-islands. The average size of the islands is dependent on the annealing condition which could be well controlled. By using the reactive-ion etching, pseudo-periodic moth-eye structures would be obtained using the gold nano-islands as a mask layer. Reactive-ion etching conditions are carefully optimized to obtain the lowest surface reflection performance of the fabricated structures. Significant omnidirectional luminescence enhancement (226.0 %) was achieved from the angle-resolved photoluminescence measurement, which proves the pseudo-periodic moth-eye structure as an effective and simple method to enhance the extraction efficiency of fluorescent SiC based white LEDs.

  1. SiC nanoparticles cyto- and genotoxicity to Hep-G2 cells

    NASA Astrophysics Data System (ADS)

    Barillet, Sabrina; Jugan, Mary-Line; Simon-Deckers, Angélique; Leconte, Yann; Herlin-Boime, Nathalie; Mayne-l'Hermite, Martine; Reynaud, Cécile; Carrière, Marie

    2009-05-01

    While emerging nanotechnologies have seen significant development in recent years, knowledge on exposure levels as well as data on toxicity of nanoparticles are still quite limited. Indeed, there is a general agreement that development of nanotechnologies may lead to considerable dissemination of nanoparticles in the environment. Nevertheless, questions relative to toxicity versus innocuousness of such materials still remain. Our present study has thus been carried out with the purpose of assessing some aspects of toxicological capacities of three kinds of nano-sized particles: TiO2 and SiC nanoparticles, as well as multi-walled carbon nanotubes (CNT). In order to address the question of their potential toxicity toward living cells, we chose several cellular models. Assuming inhalation as the most probable exposure scenario, we used A549 alveolar epithelial cells as a model for mammalian primary target organ (lung). Furthermore, we considered that nanoparticles that would deposit into the pulmonary system may be translocated to the circulatory system. Thus, we decided to study the effect of nanoparticles on potentially secondary target organs: liver (WIF-B9, Can-10, HepG2) and kidneys (NRK-52E, LLC-PK1). Herein, we will focus our attention on results obtained on the HepG2 cell line exposed to SiC nanoparticles. Scarce literature exists on SiC nanotoxicology. According to the authors that have already carried out studies on this particular nanoparticle, it would seem that SiC nanoparticles do not induce cytotoxicity. That is one of the reasons of the potential use of these nanoparticles as biological labels [1]. We thus were interested in acquiring more data on biological effects induced by SiC nanoparticles. Furthermore, one of the particular aspects of the present study lies in the fact that we tried to specify the influence of physico-chemical characteristics of nanoparticles on toxicological endpoints (cytotoxicity and genotoxicity).

  2. Construction Progress of the S-IC Test Stand Spherical Hydrogen Tank

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. This photograph taken September 18, 1963 shows a spherical hydrogen tank being constructed next to the S-IC test stand.

  3. Construction Progress of the S-IC Test Stand Hydrogen Tanks

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. In the center portion of this photograph, taken September 5, 1963, the spherical hydrogen storage tanks are being constructed. One of the massive tower legs of the S-IC test stand is visible to the far right.

  4. Melt-infiltrated Sic Composites for Gas Turbine Engine Applications

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.; Pujar, Vijay V.

    2004-01-01

    SiC-SiC ceramic matrix composites (CMCs) manufactured by the slurry -cast melt-infiltration (MI) process are leading candidates for many hot-section turbine engine components. A collaborative program between Goodrich Corporation and NASA-Glenn Research Center is aimed at determining and optimizing woven SiC/SiC CMC performance and reliability. A variety of composites with different fiber types, interphases and matrix compositions have been fabricated and evaluated. Particular focus of this program is on the development of interphase systems that will result in improved intermediate temperature stressed-oxidation properties of this composite system. The effect of the different composite variations on composite properties is discussed and, where appropriate, comparisons made to properties that have been generated under NASA's Ultra Efficient Engine Technology (UEET) Program.

  5. Additive Manufacturing of Silicon Carbide-Based Ceramic Matrix Composites: Technical Challenges and Opportunities

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay; Halbig, Michael C.; Grady, Joseph E.

    2016-01-01

    Advanced SiC-based ceramic matrix composites offer significant contributions toward reducing fuel burn and emissions by enabling high overall pressure ratio (OPR) of gas turbine engines and reducing or eliminating cooling air in the hot-section components, such as shrouds, combustor liners, vanes, and blades. Additive manufacturing (AM), which allows high value, custom designed parts layer by layer, has been demonstrated for metals and polymer matrix composites. However, there has been limited activity on additive manufacturing of ceramic matrix composites (CMCs). In this presentation, laminated object manufacturing (LOM), binder jet process, and 3-D printing approaches for developing ceramic composite materials are presented. For the laminated object manufacturing (LOM), fiber prepreg laminates were cut into shape with a laser and stacked to form the desired part followed by high temperature heat treatments. For the binder jet, processing optimization was pursued through silicon carbide powder blending, infiltration with and without SiC nano powder loading, and integration of fibers into the powder bed. Scanning electron microscopy was conducted along with XRD, TGA, and mechanical testing. Various technical challenges and opportunities for additive manufacturing of ceramics and CMCs will be presented.

  6. Metal Additive Manufacturing: A Review

    NASA Astrophysics Data System (ADS)

    Frazier, William E.

    2014-06-01

    This paper reviews the state-of-the-art of an important, rapidly emerging, manufacturing technology that is alternatively called additive manufacturing (AM), direct digital manufacturing, free form fabrication, or 3D printing, etc. A broad contextual overview of metallic AM is provided. AM has the potential to revolutionize the global parts manufacturing and logistics landscape. It enables distributed manufacturing and the productions of parts-on-demand while offering the potential to reduce cost, energy consumption, and carbon footprint. This paper explores the material science, processes, and business consideration associated with achieving these performance gains. It is concluded that a paradigm shift is required in order to fully exploit AM potential.

  7. The influence of ZrB2-SiC powders mechanical treatment on the structure of sintered ceramic composites

    NASA Astrophysics Data System (ADS)

    Buyakova, S.; Burlachenko, A.; Mirovoi, Yu; Sevostiyanova, I.; Kulkov, S.

    2016-07-01

    The effect of mechanical treatment by planetary ball milling on the properties of hot pressed ZrB2 - SiC ceramics was studied. It was shown that material densification after mechanical treatment is finished at initial stages of sintering process. Addition of SiC leads to an essential increase of sample density to 99% of theoretically achievable for powder with 2% of SiC, as compared with ZrB2 with the density less than 76%. It was demonstrated that all defects that were accumulated during mechanical treatment are annealed during hot pressing, and there are no changes of CDD values in sintered ceramics.

  8. Evaporation in space manufacturing

    NASA Technical Reports Server (NTRS)

    Li, C. H.

    1974-01-01

    'Normal evaporation' equations for predicting the compositional changes with time and temperature have been developed and correlated with actual experimental data. An evaporative congruent temperature is defined and used to explain, predict, or plan space experiments on anomalous constitutional melting (on cooling) or solidification (on heating). Uneven evaporation causes reactive jetting forces capable of initiating new convection currents, nongravitational accelerations, surface vibrations, or other disturbances. Applications of evaporation to space manufacturing are described concerning evaporative purification, surface cooling, specimen selection, particles splitting, freezing data interpretation, material loss and dimensional control, and surface contamination or compositional changes.

  9. Precise Measurement for Manufacturing

    NASA Technical Reports Server (NTRS)

    2003-01-01

    A metrology instrument known as PhaseCam supports a wide range of applications, from testing large optics to controlling factory production processes. This dynamic interferometer system enables precise measurement of three-dimensional surfaces in the manufacturing industry, delivering speed and high-resolution accuracy in even the most challenging environments.Compact and reliable, PhaseCam enables users to make interferometric measurements right on the factory floor. The system can be configured for many different applications, including mirror phasing, vacuum/cryogenic testing, motion/modal analysis, and flow visualization.

  10. Manufactured soil screening test

    SciTech Connect

    1999-05-01

    The purpose of this technical note is to provide a screening test that can be used to evaluate the potential for manufacturing artificial soil using dredged material, cellulose waste materials (e.g., yard waste compost, sawdust, wastepaper), and biosolids (e.g., N-Viro-reconditioned sewage sludge, BIONSOIL-reconstituted cow manure). This procedure will allow the most productive blend of any dredged material (uncontaminated or contaminated), cellulose, and biosolids to be determined and recommended for use in an environmentally productive and beneficial manner.

  11. Synergistically toughening effect of SiC whiskers and nanoparticles in Al2O3-based composite ceramic cutting tool material

    NASA Astrophysics Data System (ADS)

    Liu, Xuefei; Liu, Hanlian; Huang, Chuanzhen; Wang, Limei; Zou, Bin; Zhao, Bin

    2016-09-01

    In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al2O3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent performance in improving the material properties. While no attempts have been made to add SiC whiskers and SiC nanoparticles together into the ceramic matrix and the synergistically toughening effects of them have not been studied. An Al2O3-SiCw-SiCnp advanced ceramic cutting tool material is fabricated by adding both one-dimensional SiC whiskers and zero-dimensional SiC nanoparticles into the Al2O3 matrix with an effective dispersing and mixing process. The composites with 25 vol% SiC whiskers and 25 vol% SiC nanoparticles alone are also investegated for comparison purposes. Results show that the Al2O3-SiCw-SiCnp composite with both 20 vol% SiC whiskers and 5 vol% SiC nanoparticles additives have much improved mechanical properties. The flexural strength of Al2O3-SiCw-SiCnp is 730±95 MPa and fracture toughness is 5.6±0.6 MPa·m1/2. The toughening and strengthening mechanisms of SiC whiskers and nanoparticles are studied when they are added either individually or in combination. It is indicated that when SiC whiskers and nanoparticles are added together, the grains are further refined and homogenized, so that the microstructure and fracture mode ratio is modified. The SiC nanoparticles are found helpful to enhance the toughening effects of the SiC whiskers. The proposed research helps to enrich the types of ceramic cutting tool and is benefit to expand the application range of ceramic cutting tool.

  12. Polyolefin catalyst manufacturing

    SciTech Connect

    Inkrott, K.E.; Scinta, J.; Smith, P.D. )

    1989-10-16

    Statistical process control (SPC) procedures are absolutely essential for making new-generation polyolefin catalysts with the consistent high quality required by modern polyolefin processes. Stringent quality assurance is critical to the production of today's high-performance catalysts. Research and development efforts during the last 20 years have led to major technological improvements in the polyolefin industry. New generation catalysts, which once were laboratory curiosities, must now be produced commercially on a regular and consistent basis to meet the increasing requirements of the plastics manufacturing industry. To illustrate the more stringent requirements for producing the new generation polyolefin catalysts, the authors compare the relatively simple, first-generation polypropylene catalyst production requirements with some of the basic requirements of manufacturing a more complex new-generation catalyst, such as Catalyst Resources Inc.'s LYNX 900. The principles which hold true for the new-generation catalysts such as LYNX 900 are shown to apply equally to the scale-up of other advanced technology polyolefin catalysts.

  13. OPINION: Safe exponential manufacturing

    NASA Astrophysics Data System (ADS)

    Phoenix, Chris; Drexler, Eric

    2004-08-01

    In 1959, Richard Feynman pointed out that nanometre-scale machines could be built and operated, and that the precision inherent in molecular construction would make it easy to build multiple identical copies. This raised the possibility of exponential manufacturing, in which production systems could rapidly and cheaply increase their productive capacity, which in turn suggested the possibility of destructive runaway self-replication. Early proposals for artificial nanomachinery focused on small self-replicating machines, discussing their potential productivity and their potential destructiveness if abused. In the light of controversy regarding scenarios based on runaway replication (so-called 'grey goo'), a review of current thinking regarding nanotechnology-based manufacturing is in order. Nanotechnology-based fabrication can be thoroughly non-biological and inherently safe: such systems need have no ability to move about, use natural resources, or undergo incremental mutation. Moreover, self-replication is unnecessary: the development and use of highly productive systems of nanomachinery (nanofactories) need not involve the construction of autonomous self-replicating nanomachines. Accordingly, the construction of anything resembling a dangerous self-replicating nanomachine can and should be prohibited. Although advanced nanotechnologies could (with great difficulty and little incentive) be used to build such devices, other concerns present greater problems. Since weapon systems will be both easier to build and more likely to draw investment, the potential for dangerous systems is best considered in the context of military competition and arms control.

  14. Magnet cable manufacturing

    SciTech Connect

    Royet, J.

    1990-10-01

    The cable is the heart of a superconducting accelerator magnet. Since the initial development of the Rutherford Cable more than twenty years ago, many improvements in manufacturing techniques have increased the current carrying capacity. When the Tevatron cable was specified fifteen years ago the current carrying capacity was 1800 A/mm{sup 2} at a field of 5.3T. During the intervening years it has been increased to 3000 A/mm{sup 2}. These improvements were due to refinements in the fabrication of the strands and the formation of the cable from the strands. The metallurgists were able to impart significant gains in performance by improving the homogeneity of the conductor. The engineers and technicians who designed and built the modern cabling machines made an enormous contribution by significantly reducing the degradation of wire performance that occurs when the wire was cabled. The fact that these gains were made while increasing the speed of cabling is one of the technological advances that made accelerators like the SSC possible. This article describes the cabling machines that were built to manufacture the cable for the full scale SSC prototype magnets and the low beta quadrupoles for the Fermilab Tevatron. This article also presents a compendium of the knowledge that was gained in the struggle to make high performance cable to exacting dimensional standards and at the throughput needed for the SSC. The material is an important part of the technology transfer from the Department of energy Laboratories to Industry.

  15. Construction Progress of the S-IC Test Stand-Pump House

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built directly east of the test stand was the Block House, which served as the control center for the test stand. The two were connected by a narrow access tunnel which housed the cables for the controls. Again to the east, just south of the Block House, was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through

  16. SIC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION

    SciTech Connect

    Paul K.T. Liu

    2003-12-01

    A hydrogen selective membrane as a membrane reactor (MR) can significantly improve the power generation efficiency with a reduced capital and operating cost for the waster-gas-shift reaction. Existing hydrogen selective ceramic membranes are not suitable for the proposed MR due to their poor hydrothermal stability. In this project we have focused on the development of innovative silicon carbide (SiC) based hydrogen selective membranes, which can potentially overcome this technical barrier. SiC macro-porous membranes have been successfully fabricated via extrusion of commercially available SiC powder. Also, an SiC hydrogen selective thin film was prepared via our CVD/I technique. This composite membrane demonstrated excellent hydrogen selectivity at high temperature ({approx}600 C). More importantly, this membrane also exhibited a much improved hydrothermal stability at 600 C with 50% steam (atmospheric pressure) for nearly 100 hours. In parallel, we have explored an alternative approach to develop a H{sub 2} selective SiC membrane via pyrolysis of selected pre-ceramic polymers and sol-gel techniques. Building upon the positive progress made in the membrane development study, we conducted an optimization study to develop an H{sub 2} selective SiC membrane with sufficient hydrothermal stability suitable for the WGS environment. In addition, mathematical simulation has been performed to compare the performance of the membrane reactor (MR) vs conventional packed bed reactor for WGS reaction. Our result demonstrates that >99.999% conversion can be accomplished via WGS-MR using the hydrogen selective membrane developed by us. Further, water/CO ratio can be reduced, and >97% hydrogen recovery and <200 ppm CO can be accomplished according to the mathematical simulation. Thus, we believe that the operating economics of WGS can be improved significantly based upon the proposed MR concept. In parallel, gas separations and hydrothermal and long-term-storage stability of the

  17. Construction Progress of the S-IC Test Stand-Crane Control

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, taken at the S-IC test stand on October 2, 1963, is of a crane control. It was from here that the massive cranes were operated. Seen in the background is the F-1 Test Stand. Designed to assist in the development of the F-1 Engine, the F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand

  18. Construction Progress of the S-IC and F-1 Test Stands

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. North of the massive S-IC test stand, the F-1 Engine test stand was built. Designed to assist in the development of the F-1 Engine, the F-1 test stand is a vertical engine firing test stand, 239 feet in elevation and 4,600 square feet in area at the base. Capability was provided for static firing of 1.5 million pounds of thrust using liquid oxygen and kerosene. Like the S-IC stand, the foundation of the F

  19. Integrating post-manufacturing issues into design and manufacturing decisions

    NASA Technical Reports Server (NTRS)

    Eubanks, Charles F.

    1996-01-01

    An investigation is conducted on research into some of the fundamental issues underlying the design for manufacturing, service and recycling that affect engineering decisions early in the conceptual design phase of mechanical systems. The investigation focuses on a system-based approach to material selection, manufacturing methods and assembly processes related to overall product requirements, performance and life-cycle costs. Particular emphasis is placed on concurrent engineering decision support for post-manufacturing issues such as serviceability, recyclability, and product retirement.

  20. Study on micro-hardness of electroless composite plating of Ni-P with SiC Nano-particles

    NASA Astrophysics Data System (ADS)

    Sun, Yong; Zhang, Zhaoguo; Li, Jiamin; Xu, Donghui

    2007-07-01

    In this paper, a Ni-P electroless composite coating containing nano SiC particles was produced. The wearability of the composite coating was studied. Temperature, PH of the plating liquid and the concentration of SiC nanoparticles in the plating liquid were taken as parameters and the experiment with three factors and five levels was designed through the method of quadratic orthogonal rotation combination. SiC nanoparticles were dispersed by ultrasonic. The influence of the testing parameters on the hardness of the coating was studied intensively. The optimal parameters were obtained when the temperature is 86+/-1°C, PH is 6+/-0.5 and the concentration of SiC nanoparticles is 6g/L. The maximal hardness of the coating is over 1700HV after heat treatment.

  1. Tailored growth of in situAl4SiC4 in laser melted aluminum melt

    NASA Astrophysics Data System (ADS)

    Chang, Fei; Gu, Dongdong

    2015-04-01

    The crystallization and growth of in situ crystals during non-equilibrium laser rapid melting/solidification process is an important research topic in the fields of both Applied Physics and Materials Science. The present paper studies the development mechanisms of in situ formed Al4SiC4 ceramic phase within the selective laser melted SiC/AlSi10Mg composites. Two different-structured Al4SiC4 having strip and particle morphologies were disclosed and their growth mechanisms were influenced by laser linear energy density (LED). An elevated LED resulted in a larger degree formation of strip-structured Al4SiC4 with the gradually coarsened crystal sizes in its length and thickness. The homogeneously dispersed particle-shaped Al4SiC4 exhibited a considerably refined nanostructure with a proper increase in LED, but showing a significant coarsening of particles at an excessive LED.

  2. Investigation of (SiC)0.85-Sb3Te alloy for high-reliability PCM applications

    NASA Astrophysics Data System (ADS)

    Guo, Tianqi; Song, Sannian; Li, Le; Shen, Lanlan; Liu, Bo; Song, Zhitang; Qi, Ming; Feng, Songlin

    2016-10-01

    The reliability and operation speed have long been two great obstacles in phase change memory technology. Thus (SiC)0.85-Sb3Te alloy was proposed to be a new-type phase change material due to its high crystallization temperature (199.7°C) and good data retention ability (118.9°C for 10-year archival life) in this work. The stress accompanying the phase transition in (SiC)0.85-Sb3Te is smaller than those in pure Sb3Te and the traditional material, Ge2Sb2Te5. This is attributed to the fine crystal grain size due to SiC doping, which contributes to the ultrafast reversible operation (5 ns) and good endurance (2.3 × 104 cycles) of (SiC)0.85-Sb3Te based phase change memory cells.

  3. Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

    NASA Astrophysics Data System (ADS)

    Zhang, R.; Li, H.; Zhang, Z. D.; Wang, Z. S.; Zhou, S. Y.; Wang, Z.; Li, T. C.; Liu, J. R.; Fu, D. J.

    2015-08-01

    Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H-SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C1 and C6-cluster ions implanted into 6H-SiC substrates, some of the Si-C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C.

  4. A study of metal-ceramic wettability in SiC-Al using dynamic melt infiltration of SiC

    NASA Technical Reports Server (NTRS)

    Asthana, R.; Rohatgi, P. K.

    1993-01-01

    Pressure-assisted infiltration with a 2014 Al alloy of plain and Cu-coated single crystal platelets of alpha silicon carbide was used to study particulate wettability under dynamic conditions relevant to pressure casting of metal-matrix composites. The total penetration length of infiltrant metal in porous compacts was measured at the conclusion of solidification as a function of pressure, infiltration time, and SiC size for both plain and Cu-coated SiC. The experimental data were analyzed to obtain a threshold pressure for the effect of melt intrusion through SiC compacts. The threshold pressure was taken either directly as a measure of wettability or converted to an effective wetting angle using the Young-Laplace capillary equation. Cu coating resulted in partial but beneficial improvements in wettability as a result of its dissolution in the melt, compared to uncoated SiC.

  5. Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal

    NASA Astrophysics Data System (ADS)

    Zuev, V. V.; Grigoriev, S. N.; Romanov, R. I.; Fominski, V. Y.; Volosova, M. A.; Demin, M. V.

    2016-09-01

    Amorphous WOx films were prepared on the SiC crystal by using two different methods, namely, reactive pulsed laser deposition (RPLD) and reactive deposition by ion sputtering (RDIS). After deposition, the WOx films were annealed in an air. The RISD film possessed a m-WO3 structure and consisted of closely packed microcrystals. Localized swelling of the films and micro-hills growth did not destroy dense crystal packing. RPLD film had layered β-WO3 structure with relatively smooth surface. Smoothness of the films were destroyed by localized swelling and the micro-openings formation was observed. Comparative study of m-WO3/SiC, Pt/m-WO3/SiC, and P-WO3/SiC samples shows that structural characteristics of the WO3 films strongly influence on the voltage/current response as well as on the rate of current growth during H2 detection at elevated temperatures.

  6. Distribution of Pd, Ag & U in the SiC Layer of an Irradiated TRISO Fuel Particle

    SciTech Connect

    Thomas M. Lillo; Isabella J. van Rooyen

    2014-08-01

    The distribution of silver, uranium and palladium in the silicon carbide (SiC) layer of an irradiated TRISO fuel particle was studied using samples extracted from the SiC layer using focused ion beam (FIB) techniques. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy was used to identify the presence of the specific elements of interest at grain boundaries, triple junctions and precipitates in the interior of SiC grains. Details on sample fabrication, errors associated with measurements of elemental migration distances and the distances migrated by silver, palladium and uranium in the SiC layer of an irradiated TRISO particle from the AGR-1 program are reported.

  7. Effect of H2 and NH3 Adsorption on Electronic Transport Properties of SiC Nanowires: A DFT Analysis

    NASA Astrophysics Data System (ADS)

    Vasumathi, R.; Thayumanavan, A.; Sriram, S.

    2017-02-01

    Silicon carbide (SiC) nanowire structures with and without hydrogen (H2) and ammonia (NH3) molecules have been constructed and optimized using density functional theory to study their electronic and transport properties. The adsorption energies calculated for the SiC nanowire structures reveal that the adsorption process of H2 and NH3 molecules is endothermic in nature. Nonequilibrium Green's function transport theory is employed to study the electronic transport properties of the SiC nanowire devices with and without H2 and NH3 molecules. The voltage-current (V-I) characteristic shows negative differential resistance (NDR) behavior for all the SiC nanowire devices when bias voltage is applied. It is inferred that the NDR behavior is due to shift of quasibound states near the Fermi level because of the applied bias voltage. This observed NDR behavior may be useful for fabrication of nanoelectronic devices.

  8. Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

    NASA Astrophysics Data System (ADS)

    Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

    2016-09-01

    The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

  9. Additive manufacturing of optical components

    NASA Astrophysics Data System (ADS)

    Heinrich, Andreas; Rank, Manuel; Maillard, Philippe; Suckow, Anne; Bauckhage, Yannick; Rößler, Patrick; Lang, Johannes; Shariff, Fatin; Pekrul, Sven

    2016-08-01

    The development of additive manufacturing methods has enlarged rapidly in recent years. Thereby, the work mainly focuses on the realization of mechanical components, but the additive manufacturing technology offers a high potential in the field of optics as well. Owing to new design possibilities, completely new solutions are possible. This article briefly reviews and compares the most important additive manufacturing methods for polymer optics. Additionally, it points out the characteristics of additive manufactured polymer optics. Thereby, surface quality is of crucial importance. In order to improve it, appropriate post-processing steps are necessary (e.g. robot polishing or coating), which will be discussed. An essential part of this paper deals with various additive manufactured optical components and their use, especially in optical systems for shape metrology (e.g. borehole sensor, tilt sensor, freeform surface sensor, fisheye lens). The examples should demonstrate the potentials and limitations of optical components produced by additive manufacturing.

  10. Manufacturing consumption of energy 1994

    SciTech Connect

    1997-12-01

    This report provides estimates on energy consumption in the manufacturing sector of the U.S. economy based on data from the Manufacturing Energy Consumption Survey. The sample used in this report represented about 250,000 of the largest manufacturing establishments which account for approximately 98 percent of U.S. economic output from manufacturing, and an expected similar proportion of manufacturing energy use. The amount of energy use was collected for all operations of each establishment surveyed. Highlights of the report include profiles for the four major energy-consuming industries (petroleum refining, chemical, paper, and primary metal industries), and an analysis of the effects of changes in the natural gas and electricity markets on the manufacturing sector. Seven appendices are included to provide detailed background information. 10 figs., 51 tabs.

  11. Turbine airfoil manufacturing technology

    SciTech Connect

    Kortovich, C.

    1995-10-01

    The efficiency and effectiveness of the gas turbine engine is directly related to the turbine inlet temperatures. The ability to increase these temperatures has occurred as a result of improvements in materials, design, and processing techniques. A generic sequence indicating the relationship of these factors to temperature capability is schematically shown in Figure 1 for aircraft engine and land based engine materials. A basic contribution that is not captured by the Figure is the significant improvement in process and manufacturing capability that has accompanied each of these innovations. It is this capability that has allowed the designs and innovations to be applied on a high volume, cost effective scale in the aircraft gas turbine market.

  12. Manufacture of Probiotic Bacteria

    NASA Astrophysics Data System (ADS)

    Muller, J. A.; Ross, R. P.; Fitzgerald, G. F.; Stanton, C.

    Lactic acid bacteria (LAB) have been used for many years as natural biopreservatives in fermented foods. A small group of LAB are also believed to have beneficial health effects on the host, so called probiotic bacteria. Probiotics have emerged from the niche industry from Asia into European and American markets. Functional foods are one of the fastest growing markets today, with estimated growth to 20 billion dollars worldwide by 2010 (GIA, 2008). The increasing demand for probiotics and the new food markets where probiotics are introduced, challenges the industry to produce high quantities of probiotic cultures in a viable and stable form. Dried concentrated probiotic cultures are the most convenient form for incorporation into functional foods, given the ease of storage, handling and transport, especially for shelf-stable functional products. This chapter will discuss various aspects of the challenges associated with the manufacturing of probiotic cultures.

  13. Manufacturing consumption of energy 1991

    SciTech Connect

    Not Available

    1994-12-01

    This report provides estimates on energy consumption in the manufacturing sector of the US economy. These estimates are based on data from the 1991 Manufacturing Energy Consumption Survey (MECS). This survey--administered by the Energy End Use and Integrated Statistics Division, Office of Energy Markets and End Use, Energy Information Administration (EIA)--is the most comprehensive source of national-level data on energy-related information for the manufacturing industries.

  14. Growth and characterization of cubic SiC single-crystal films on Si

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

    1987-01-01

    Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

  15. Vacuum brazing of high volume fraction SiC particles reinforced aluminum matrix composites

    NASA Astrophysics Data System (ADS)

    Cheng, Dongfeng; Niu, Jitai; Gao, Zeng; Wang, Peng

    2015-03-01

    This experiment chooses A356 aluminum matrix composites containing 55% SiC particle reinforcing phase as the parent metal and Al-Si-Cu-Zn-Ni alloy metal as the filler metal. The brazing process is carried out in vacuum brazing furnace at the temperature of 550°C and 560°C for 3 min, respectively. The interfacial microstructures and fracture surfaces are investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy spectrum analysis (EDS). The result shows that adequacy of element diffusion are superior when brazing at 560°C, because of higher activity and liquidity. Dislocations and twins are observed at the interface between filler and composite due to the different expansion coefficient of the aluminum alloy matrix and SiC particles. The fracture analysis shows that the brittle fracture mainly located at interface of filler and composites.

  16. Identification of luminescent surface defect in SiC quantum dots

    SciTech Connect

    Dai, Dejian; Guo, Xiaoxiao; Fan, Jiyang

    2015-02-02

    The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HO···C=O [n{sub (OH)} → π*{sub (CO)}] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438 nm. Another surface defect (Si–Si) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.

  17. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

    NASA Technical Reports Server (NTRS)

    Reese, Bradley

    2015-01-01

    Arkansas Power Electronics International (APEI), Inc., is developing a high-efficiency, radiation-hardened 3.8-kW SiC power supply for the PPU of Hall effect thrusters. This project specifically targets the design of a PPU for the high-voltage Hall accelerator (HiVHAC) thruster, with target specifications of 80- to 160-V input, 200- to 700-V/5A output, efficiency greater than 96 percent, and peak power density in excess of 2.5 kW/kg. The PPU under development uses SiC junction field-effect transistor power switches, components that APEI, Inc., has irradiated under total ionizing dose conditions to greater than 3 MRad with little to no change in device performance.

  18. Nanomechanical Behavior of Single Crystalline SiC Nanotubes Revealed by Molecular Dynamics Simulations

    SciTech Connect

    Wang, Zhiguo; Zu, Xiaotao T.; Gao, Fei; Weber, William J.

    2008-11-01

    Molecular dynamics simulations with Tersoff potentials were used to study the response of single crystalline SiC nanotubes under tensile, compressive, torsional, combined tension-torsional and combined compression-torsional strains. The simulation results reveal that the nanotubes deform through bond-stretching and breaking and exhibit brittle properties under uniaxial tensile strain, except for the thinnest nanotube at high temperatures, which fails in a ductile manner. Under uniaxial compressive strain, the SiC nanotubes buckle with two modes, i.e. shell buckling and column buckling, depending on the length of the nanotubes. Under torsional strain, the nanotubes buckle either collapse in the middle region into a dumbbell-like structure for thinner wall thicknesses or fail by bond breakage for the largest wall thickness. Both the tensile failure stress and buckling stress decrease under combined tension-torsional and combined compression-torsional strain, and they decrease with increasing torsional rate under combined loading.

  19. Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

    NASA Astrophysics Data System (ADS)

    Brar, Victor W.; Zhang, Yuanbo; Yayon, Yossi; Ohta, Taisuke; McChesney, Jessica L.; Bostwick, Aaron; Rotenberg, Eli; Horn, Karsten; Crommie, Michael F.

    2007-09-01

    The authors present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows an ˜100meV gaplike feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are relevant for potential devices involving electronic transport or tunneling in graphene/SiC.

  20. Mechanical evaluation of SiC particle reinforced oxynitride glass and glass-ceramic composites

    SciTech Connect

    Rouxel, T.; Lavelle, C. . Lab. de Materiaux Ceramiques et Traitements de Surface); Garnier, C.; Verdier, P.; Laurent, Y. . Lab. de Chimie des Materiaux)

    1994-07-01

    In silicon oxynitride glasses, the nitrogen occupies anion sites and is bonded to three silicons. Hence, replacement of divalent oxygen ions by trivalent nitrogen ones results in a considerable improvement of the mechanical resistance. In this exploratory work, the authors investigate some basic mechanical properties at room temperature of composite materials prepared by adding some SiC particles to a highly refractory Y-Mg-Si-Al-O-N oxynitride glass. Taking advantage of both constituents, the brittle particulate composites exhibit much better fracture strength and toughness and higher elastic moduli than the glassy matrix. Due to the easy crystallization of the selected glass, a further improvement is attainable through a crystallization treatment of the matrix. Fracture toughness and Young's modulus as high as 5.4 MPa.m[sup 0.5] and 215 GPa respectively have been measured on the glass-ceramic composite containing 50 vol.% SiC.

  1. Synthesis and characterization of SiC materials with hierarchical porosity obtained by replication techniques.

    PubMed

    Sonnenburg, Kirstin; Adelhelm, Philipp; Antonietti, Markus; Smarsly, Bernd; Nöske, Robert; Strauch, Peter

    2006-08-14

    Porous silicon carbide monoliths were obtained using the infiltration of preformed SiO(2) frameworks with appropriate carbon precursors such as mesophase pitch. The initial SiO(2) monoliths possessed a hierarchical pore system, composed of an interpenetrating bicontinuous macropore structure and 13 nm mesopores confined in the macropore walls. After carbonization, further heat treatment at ca. 1,400 degrees C resulted in the formation of a SiC-SiO(2) composite, which was converted into a porous SiC monolith by post-treatment with ammonium fluoride solution. The resulting porous SiC featured high crystallinity, high chemical purity and showed a surface area of 280 m(2) g(-1) and a pore volume of 0.8 ml g(-1).

  2. Joining of SiC ceramics and SiC/SiC composites

    SciTech Connect

    Rabin, B.H.

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  3. Fabrication and Evaluation of a High Performance SiC Inverter for Wireless Power Transfer Applications

    SciTech Connect

    Onar, Omer C; Campbell, Steven L; Ning, Puqi; Miller, John M; Liang, Zhenxian

    2013-01-01

    In this study, a high power density SiC high efficiency wireless power transfer converter system via inductive coupling has been designed and developed. The detailed power module design, cooling system design and power stage development are presented. The successful operation of rated power converter system demonstrates the feasible wireless charging plan. One of the most important part of this study is the wind bandgap devices packaged at the Oak Ridge National Laboratory (ORNL) using the in-house packaging technologies by employing the bare SiC dies acquired from CREE, which are rated at 50 A / 1200 V each. These packaged devices are also inhouse tested and characterized using ORNL s Device Characterization Facility. The successful operation of the proposed inverter is experimentally verified and the efficiency and operational characteristics of the inverter are also revealed.

  4. Multilayer epitaxial graphene grown on the SiC (000- 1) surface; structure and electronic properties

    SciTech Connect

    Sprinkle, M.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Tinkey, H.; Clark, M.C.; Soukiassian, P.; Martinotti, D.; Hass, J.; Conrad, E.H.

    2010-10-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (000{bar 1}) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  5. Intercalation of graphene on SiC(0001) via ion implantation

    NASA Astrophysics Data System (ADS)

    Stöhr, Alexander; Forti, Stiven; Link, Stefan; Zakharov, Alexei A.; Kern, Klaus; Starke, Ulrich; Benia, Hadj M.

    2016-08-01

    Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. The investigation of the obtained graphene system reveals no clear spin-orbit coupling enhancement expected by theory in addition to the presence of residual structural defects. Our graphene/SiC(0001) intercalation procedure puts forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.

  6. Depth dependence of defect density and stress in GaN grown on SiC

    SciTech Connect

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-15

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29 to 30 {mu}m. High level of residual elastic strain was found in thin (0.29 to 0.73 {mu}m thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2x10{sup 7} cm{sup -2}, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  7. Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as templates

    NASA Astrophysics Data System (ADS)

    Han, Weiqiang; Redlich, Philipp; Ernst, Frank; Rühle, Manfred

    1999-09-01

    A method is described to synthesize silicon carbide (SiC)-filled boron nitride (BN) nanotubes (NT) simultaneously in high yield by using carbon nanotubes (CNTs) as templates. This method combines both carbon nanotube-substitution reaction and confined reaction. Through the CNT-substitution reaction, CNTs react with boron oxide vapor in the presence of nitrogen gas to form BN NTs, whose diameters and lengths are similar to those of the starting CNTs. The formation of the SiC filling is proceeded by the penetration of SiO vapor into the cavity of the nanotubes and subsequent reaction of SiO vapor with the inner carbon layers or volatile carbon mono-oxide in the interior to form SiC nanowires. The filled length can be up to the entire length of the nanotubes. SiC-filled (BN)xCy nanotubes also form in the product.

  8. Enhancement of second harmonic generation in nanocrystalline SiC films based natural microcavities

    NASA Astrophysics Data System (ADS)

    Semenov, A. V.; Skorik, S. N.; Jedryka, J.; Ozga, K.; Kityk, I. V.

    2017-01-01

    We explore second harmonic generation (SHG) features of nanocrystalline SiC films based natural microcavities (MC) with resonance modes in the vicinity of the fundamental radiation at 1064 nm wavelength for nanocrystalline films of 24R, 27R polytypes characterized by high radiation doubling frequency coefficients. The natural walls of the SiC NC serve a role of cavities. To learn the nonlinear resonance features of the MC near the fundamental wavelength 1064 nm three series of the nc-SiC films indicated as 7495, 7517 and 7522 with thicknesses varying within 250-600 nm were fabricated. The role of the coherent and non-coherent contributions with taking into an account of cavity resonance modes is discussed. The giant increase of the SHG was achieved which may be used for further fabrication of the frequency transducers and nonlinear optical triggers.

  9. Characterization of SiC nanowires obtained from carbon black powder

    NASA Astrophysics Data System (ADS)

    Wieligor, Monika; Zerda, T. W.

    2009-03-01

    SiC nanowires were obtained by a reaction between vapor silicon and carbon black powder in vacuum at 1200oC. Their structures and properties were studied using X-ray diffraction, high resolution transmission microscopy, HRTEM, and Raman scattering techniques. We show that diameter of sintered nanowires depends on carbon black grade and its history of thermal treatment. SiC nanowires of diameter as small as 10 nm were obtained from graphitized furnace carbon blacks. Chemical composition of nanowires was similar for all samples, but concentration of structural defects varied and depended on carbon black surface properties and surface morphology. Stacking faults and twins dislocations were observed in all specimens and characterized by HRTEM, X-ray diffraction, and Raman spectroscopy.

  10. The astrophysical interpretation of isotope anomalies in graphite and SiC grains of chondrites

    NASA Technical Reports Server (NTRS)

    Lavrukhina, A. K.

    1993-01-01

    The C, N, and Mg isotopic compositions in graphite and SiC grains of carbonaceous chondrites can be explained by nuclear processes in massive O,B stars of second generation passed a stage of WR star with intensive stellar wind, where grain condensation had taken place. The interstellar graphite and SiC grains with anomalous isotopic compositions of C, N, Ne, and Si and other elements of nucleosynthetic origin, found in non-equilibrated chondrites, are most suitable for determination of astro-physical objects, where nucleosynthesis had taken place. Two objects were examined: (1) massive O,B stars of second generation passed a stage of WR star with intensive stellar wind (O,B-WR model) and (2) low-mass stars (1 less than or equal to M/solar mass less than or equal to 3) during thermally pulsing asymptotic giant branch phase (TP-AGB model).

  11. Joining of SiC ceramics and SiC/SiC composites

    SciTech Connect

    Rabin, B.H.

    1995-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method has the potential to facilitate the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent efforts have focused on transferring the joining technology to industry. Several industrial partners have been identified and collaborative research projects are in progress. Investigations are focusing on applying the joining method to sintered a-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  12. Modeling and design of a monolithically integrated power converter on SiC

    NASA Astrophysics Data System (ADS)

    Yu, L. C.; Sheng, K.; Zhao, J. H.

    2008-10-01

    To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200 V and an output voltage of 400 V, 2.5 A, operating at 1 kW and 5 MHz.

  13. On the doping limit for strain stability retention in phosphorus doped Si:C

    SciTech Connect

    Chuang, Yao-Teng; Hu, Kuan-Kan; Woon, Wei-Yen

    2014-07-21

    Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below β-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further β-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 × 10{sup 14} atom/cm{sup 2}) for the retention of strain stability in phosphorus doped Si:C.

  14. Ubiquitous interstellar diamond and SiC in primitive chondrites - Abundances reflect metamorphism

    NASA Technical Reports Server (NTRS)

    Huss, Gary R.

    1990-01-01

    It is shown here that interstellar diamond and SiC were incorporated into all groups of chondrite meteorites. Abundances rapidly go to zero with increasing metamorphic grade, suggesting that metamorphic destruction is responsible for the apparent absence of these grains in most chondrites. In unmetamorphosed chondrites, abundances normalized to matrix content are similar for different classes. Diamond samples from chondrites of different classes have remarkably similar noble-gas constants and isotropic compositions, although constituent diamonds may have come from many sources. SiC seems to be more diverse, partly because grains are large enough to measure individually, but average characteristics seem to be similar from meteorite to meteorite. These observations suggest that various classes of chondritic meteorites sample the same solar system-wide reservoir of interstellar grains.

  15. Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4 H -SiC

    NASA Astrophysics Data System (ADS)

    Zargaleh, S. A.; Eble, B.; Hameau, S.; Cantin, J.-L.; Legrand, L.; Bernard, M.; Margaillan, F.; Lauret, J.-S.; Roch, J.-F.; von Bardeleben, H. J.; Rauls, E.; Gerstmann, U.; Treussart, F.

    2016-08-01

    We present evidence of near-infrared photoluminescence (PL) signature of nitrogen vacancy centers (NCVSi) - in silicon carbide (SiC). This center exhibits an S =1 ground state spin similar to the NV- center in diamond. We have performed photoluminescence excitation measurements at cryogenic temperature and demonstrated efficient photoexcitation of distinct photoluminescence from (NCVSi)- in 4 H -SiC. Furthermore, by correlating the energies of measured zero phonon lines (ZPLs) with theoretical values derived from hybrid density functional theory each of the ZPLs has been associated to the respective occupation of hexagonal (h ) and quasicubic (k ) lattice sites in close analogy to neutral divacancy centers (VCVSi) 0 in the same material. Finally, with the appropriate choice of excitation energy we demonstrated the selective excitation of (NCVSi) - PL with no contamination by (VCVSi) 0 PL, thereby opening the way towards the optical detection of (NCVSi) - electron spin resonance.

  16. Dissimilar joint characteristics of SiC and WC-Co alloy by laser brazing

    NASA Astrophysics Data System (ADS)

    Nagatsuka, K.; Sechi, Y.; Nakata, K.

    2012-08-01

    SiC and WC-Co alloys were joined by laser brazing with an active braze metal. The braze metal based on eutectic Ag-Cu alloy with additional Ti as an active element ranging from 0 to 2.8 mass% was sandwiched by the SiC block and WC-Co alloy plate. The brazing was carried out by selective laser beam irradiation on the WC-Co alloy plate. The content of Ti in the braze metal was required to exceed 0.6 mass% in order to form a brazed joint with a measurable shear strength. The shear strength increased with increasing Ti content up to 2.3 mass%Ti and decreased with a higher content.

  17. Numerical design of induction heating in the PVT growth of SiC crystal

    NASA Astrophysics Data System (ADS)

    Su, Juan; Chen, Xuejiang; Li, Yuan

    2014-09-01

    A 2-D numerical global model was applied to study effects of induction heating system on silicon carbide single crystal growth by a finite element method. Models with different coil radii and different electrical frequencies were carried out to investigate the relationship between coil design and SiC crystal growth process while the temperature of the monitoring point was fixed at about 2300 K. The predicted growth rate along the substrate surface was also compared and discussed. The results showed that the temperature distribution inside the furnace and the growth rate were affected by coil radius and electrical frequency. Finally, based on the analysis of simulation results, one reasonable range of coil radius and electrical frequency compromising a balance between higher growth rate, lower electrical power consumption, lower thermal stress in grown crystals and more stable operation of SiC powder was obtained.

  18. A model for thermal oxidation of Si and SiC including material expansion

    SciTech Connect

    Christen, T. Ioannidis, A.; Winkelmann, C.

    2015-02-28

    A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.

  19. Oxynitride and Silicates at Epitaxial Graphene on SiC (0001)

    NASA Astrophysics Data System (ADS)

    Sirikumara, Hansika; Bohorquez, Jaime; Jayasekera, Thushari

    2014-03-01

    Epitaxial graphene, the sp2-hybridized network of carbon grown on another material is one way of creating large-scale graphene. Intercalated oxygen at the interface has shown to saturate the Si dangling bonds, and is a promising way of tuning the charge density in epitaxial graphene on SiC. It would be interesting to investigate how oxy-nitrides and silicates at the SiC/graphene interface can change the electronic properties of the graphene layer. Based on the first principles density functional theory calculations, we discuss the electronic and structural properties of epitaxial graphene on SiC with Si2O5 and SiON layers at the interface.

  20. Precipitation Sequence of a SiC Particle Reinforced Al-Mg-Si Alloy Composite

    NASA Astrophysics Data System (ADS)

    Shen, Rujuan; Wang, Yihan; Guo, Baisong; Song, Min

    2016-11-01

    In this study, the precipitation sequence of a 5 vol.% SiC particles reinforced Al-1.12 wt.%Mg-0.77 wt.%Si alloy composite fabricated by traditional powder metallurgy method was investigated by transmission electron microscopy and hardness measurements. The results indicated that the addition of SiC reinforcements not only suppresses the initial aging stage but also influences the subsequent precipitates. The precipitation sequence of the composite aged at 175 °C can be described as: Guinier-Preston (G.P.) zone → β″ → β' → B', which was confirmed by high-resolution transmission electron microscopy. This work might provide the guidance for the design and fabrication of hardenable automobile body sheet by Al-based composites with enhanced mechanical properties.