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Sample records for 20-foot spin tunnel

  1. Tests of Dynamic Scale Model of Gemini Capsule in the Langley 20-Foot Free-Spinning Tunnel

    NASA Technical Reports Server (NTRS)

    1962-01-01

    Tests of Dynamic Scale Model of Gemini Capsule in the Langley 20-Foot Free-Spinning Tunnel. The film shows three spin tunnel tests of a 1/20 scale model of the Gemini capsule. In the first test, the capsule spins freely. In tests 2 and 3, a drogue parachute is attached to the capsule. [Entire movie available on DVD from CASI as Doc ID 20070030989. Contact help@sti.nasa.gov

  2. Compilation of Test Data on 111 Free-Spinning Airplane Models Tested in the Langley 15-Foot and 20-Foot Free-Spinning Tunnels

    NASA Technical Reports Server (NTRS)

    Malvestuto, Frank S.; Gale, Lawrence J.; Wood, John H.

    1947-01-01

    A compilation of free-spinning-airplane model data on the spin and recovery characteristics of 111 airplanes is presented. These data were previously published in separate memorandum reports and were obtained from free-spinning tests in the Langley 15-foot and the Langley 20-foot free-spinning tunnels. The model test data presented include the steady-spin and recovery characteristics of each model for various combinations of aileron and elevator deflections and for various loadings and dimensional configurations. Dimensional data, mass data, and a three-view drawing of the corresponding free-spinning tunnel model are also presented for each airplane. The data presented should be of value to designers and should facilitate the design of airplanes incorporating satisfactory spin-recovery characteristics.

  3. Supplementary Investigation in the Langley 20-Foot Free-Spinning Tunnel of the Spin and Recovery Characteristics of a 0.057-Scale Model of the Chance Vought XFU-1 Airplane, Ted No. NACA DE 311

    NASA Technical Reports Server (NTRS)

    Berman, Theodore

    1948-01-01

    An investigation has been conducted in the Langley 20-foot free-spinning tunnel to determine the effects of decreasing the rudder deflection, of decreasing the rudder span, and of differential rudder movements on the spin and recovery characteristics of a 0.057-scale model of the Chance Vought XF7U-1 airplane. The results indicated that decreasing the rudder span or the rudder deflections, individually or jointly, did not seriously alter the spin or recovery characteristics of the model; and recovery by normal use of controls (full rapid rudder reversal followed l/2 to 1 turn later by movement of the stick forward of neutral) remained satisfactory. Linking the original rudders so that the inboard rudder moves from full with the spin to neutral while the outboard rudder moves from neutral to full against the spin will also result in satisfactory spin and recovery characteristics. Calculations of rudder-pedal forces for recovery showed that the expected forces would probably be within the capabilities of a pilot but that it would be advisable to install some type of boost in the control system to insure easy and rapid movement of the rudders.

  4. Recent experiences with implementing a video based six degree of freedom measurement system for airplane models in a 20 foot diameter vertical spin tunnel

    NASA Technical Reports Server (NTRS)

    Snow, Walter L.; Childers, Brooks A.; Jones, Stephen B.; Fremaux, Charles M.

    1993-01-01

    A model space positioning system (MSPS), a state-of-the-art, real-time tracking system to provide the test engineer with on line model pitch and spin rate information, is described. It is noted that the six-degree-of-freedom post processor program will require additional programming effort both in the automated tracking mode for high spin rates and in accuracy to meet the measurement objectives. An independent multicamera system intended to augment the MSPS is studied using laboratory calibration methods based on photogrammetry to characterize the losses in various recording options. Data acquired to Super VHS tape encoded with Vertical Interval Time Code and transcribed to video disk are considered to be a reasonable priced choice for post editing and processing video data.

  5. The Aerodynamic Drag of Flying-boat Hull Model as Measured in the NACA 20-foot Wind Tunnel I.

    NASA Technical Reports Server (NTRS)

    Hartman, Edwin P

    1935-01-01

    Measurements of aerodynamic drag were made in the 20-foot wind tunnel on a representative group of 11 flying-boat hull models. Four of the models were modified to investigate the effect of variations in over-all height, contours of deck, depth of step, angle of afterbody keel, and the addition of spray strips and windshields. The results of these tests, which cover a pitch-angle range from -5 to 10 degrees, are presented in a form suitable for use in performance calculations and for design purposes.

  6. Large-Scale Boundary-Layer Control Tests on Two Wings in the NACA 20-Foot Wind Tunnel, Special Report

    NASA Technical Reports Server (NTRS)

    Freeman, Hugh B.

    1935-01-01

    Tests were made in the N.A.C.A. 20-foot wind tunnel on: (1) a wing, of 6.5-foot span, 5.5-foot chord, and 30 percent maximum thickness, fitted with large end plates and (2) a 16-foot span 2.67-foot chord wing of 15 percent maximum thickness to determine the increase in lift obtainable by removing the boundary layer and the power required for the blower. The results of the tests on the stub wing appeared more favorable than previous small-scale tests and indicated that: (1) the suction method was considerably superior to the pressure method, (2) single slots were more effective than multiple slots (where the same pressure was applied to all slots), the slot efficiency increased rapidly for increasing slot widths up to 2 percent of the wing chord and remained practically constant for all larger widths tested, (3) suction pressure and power requirements were quite low (a computation for a light airplane showed that a lift coefficient of 3.0 could be obtained with a suction as low as 2.3 times the dynamic pressure and a power expenditure less than 3 percent of the rated engine power), and (4) the volume of air required to be drawn off was quite high (approximately 0.5 cubic feet per second per unit wing area for an airplane landing at 40 miles per hour with a lift coefficient of 3,0), indicating that considerable duct area must be provided in order to prevent flow losses inside the wing and insure uniform distribution of suction along the span. The results from the tests of the large-span wing were less favorable than those on the stub wing. The reasons for this were, probably: (1) the uneven distribution of suction along the span, (2) the flow losses inside the wing, (3) the small radius of curvature of the leading edge of the wing section, and (4) the low Reynolds Number of these tests, which was about one half that of the stub wing. The results showed a large increase in the maximum lift coefficient with an increase in Reynolds Number in the range of the tests. The

  7. Resonant Tunneling Spin Pump

    NASA Technical Reports Server (NTRS)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  8. Free-Spinning-Tunnel Investigation of a 1/17 Scale Model of the Cessna T-37A Airplane

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.; Healy, Frederick M.

    1958-01-01

    Results of an investigation of a dynamic model in the Langley 20-foot free-spinning tunnel are presented. Erect spin and recovery characteristics were determined for a range of mass distributions and center-of-gravity positions. The effects of lateral displacement of the center of gravity, engine rotation, nose strakes, and increased rudder area were investigated.

  9. Spin tunneling in conducting oxides

    SciTech Connect

    Bratkovsky, A.

    1998-12-31

    Different tunneling mechanisms in conventional and half-metallic ferromagnetic tunnel junctions are analyzed within the same general method. Direct tunneling is compared with impurity-assisted, surface state assisted, and inelastic contributions to a tunneling magnetoresistance (TMR). Theoretically calculated direct tunneling in iron group systems leads to about a 30% change in resistance, which is close to experimentally observed values. It is shown that the larger observed values of the TMR might be a result of tunneling involving surface polarized states. The authors find that tunneling via resonant defect states in the barrier radically decreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunnel diode structure would give a TMR of about 8%. With regards to inelastic tunneling, magnons and phonons exhibit opposite effects: one-magnon emission generally results in spin mixing and, consequently, reduces the TMR, whereas phonons are shown to enhance the TMR. The inclusion of both magnons and phonons reasonably explains an unusually bias dependence of the TMR. The model presented here is applied qualitatively to half-metallics with 100% spin polarization, where one-magnon processes are suppressed and the change in resistance in the absence of spin-mixing on impurities may be arbitrarily large. Even in the case of imperfect magnetic configurations, the resistance change can be a few 1,000%. Examples of half-metallic systems are CrO{sub 2}/TiO{sub 2} and CrO{sub 2}/RuO{sub 2}, and an account of their peculiar band structures is presented. The implications and relation of these systems to CMR materials, which are nearly half-metallic, are discussed.

  10. Thermal creation of a spin current by Seebeck spin tunneling

    NASA Astrophysics Data System (ADS)

    Jansen, R.; Le Breton, J. C.; Deac, A. M.; Saito, H.; Yuasa, S.

    2013-09-01

    The thermoelectric analog of spin-polarized tunneling, namely Seebeck spin tunneling, is a recently discovered phenomenon that arises from the spin-dependent Seebeck coefficient of a magnetic tunnel contact. In a tunnel junction with one ferromagnetic electrode and one non-magnetic electrode, a temperature difference between the two electrodes creates a spin current across the contact. Here, the basic principle and the observation of Seebeck spin tunneling are described. It is shown how it can be used to create a spin accumulation in silicon driven by a heat flow across a magnetic tunnel contact, without a charge tunnel current. The sign of the spin current depends on the direction of the heat flow, whereas its magnitude is anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet. The connection between Seebeck spin tunneling and the tunnel magneto-Seebeck effect, observed in metal magnetic tunnel junctions, is also clarified. Seebeck spin tunneling may be used to convert waste heat into useful thermal spin currents that aid or replace electrical spin current, and thereby improve the energy efficiency of spintronic devices and technologies.

  11. Homoepitaxial graphene tunnel barriers for spin transport

    NASA Astrophysics Data System (ADS)

    Friedman, Adam

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. We demonstrate successful tunneling, charge, and spin transport with a fluorinated graphene tunnel barrier on a graphene channel. We show that while spin transport stops short of room temperature, spin polarization efficiency values are the highest of any graphene spin devices. We also demonstrate that hydrogenation of graphene can also be used to create a tunnel barrier. We begin with a four-layer stack of graphene and hydrogenate the top few layers to decouple them from the graphene transport channel beneath. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies. The measured spin polarization efficiencies for hydrogenated graphene are higher than most oxide tunnel barriers on graphene, but not as high as with fluorinated graphene tunnel barriers. However, here we show that spin transport persists up to room temperature. Our results for the hydrogenated graphene tunnel barriers are compared with fluorinated tunnel barriers and we discuss the

  12. Spin Valves and Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Iversen, Kurt; Pufall, Matthew; Heindl, Ranko

    2011-10-01

    This is a presentation of research conducted through the National Institute of Standards and Technology's Summer Undergraduate Research Fellowship program. A spintronic device is one that uses the electron's magnetic moment (its spin) as well as its charge to perform operations, such as data storage or logic. Many of today's spintronic devices are based on the ``tunneling magnetoresistance'' effect of CoFeB/MgO/CoFeB tunnel junctions. The MgO barrier in devices must be highly uniform and only 1-2 nm thick. Relevant background, including electron spin and tunneling, is supplied. The fabrication, operation, and behavior of spin-valves and magnetic tunnel junctions are described, and applications in Hard Disk Drives, Magnetic Random Access Memory, Magnetic Field Sensors, and Spin-Torque Oscillators are discussed.

  13. Homoepitaxial graphene tunnel barriers for spin transport

    NASA Astrophysics Data System (ADS)

    Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

    2016-05-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  14. Spin transport in nanoscale spin valves and magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Patibandla, Sridhar

    Spintronics or electronics that utilizes the spin degree of freedom of a single charge carrier (or an ensemble of charge carriers) to store, process, sense or communicate data and information is a rapidly burgeoning field in electronics. In spintronic devices, information is encoded in the spin polarization of a single carrier (or multiple carriers) and the spin(s) of these carrier(s) are manipulated for device operation. This strategy could lead to devices with low power consumption. This dissertation investigates spin transport in one dimensional and two dimensional semiconductors, with a view to applications in spintronic devices. This dissertation is arranged as follows: Chapter 1 gives a detailed introduction and necessary background to understand aspects of spin injection into a semiconductor from a spin polarized source such as a ferromagnet, and spin polarized electron transport in the semiconductor. Chapter 2 discusses the nanoporous alumina technique that is employed to fabricate nanowires and nanowire spin valves for the investigation of spin transport in 1D semiconductors. Chapter 3 investigates the spin transport in quasi one-dimensional spin valves with germanium spacer layer. These spin valves with 50nm in diameter and 1 mum length were fabricated using the porous alumina technique. Spin transport in nanoscale germanium spin valves was demonstrated and the spin relaxation lengths and the spin relaxation times were calculated. Chapter 4 discusses spin transport studies conducted in bulk high purity germanium with a view to comparing spin relaxation mechanisms in low mobility nanowires and high mobility bulk structures. Lateral spin valve with tunnel injectors were employed in this study and the spin transport measurements were conducted at various temperatures. The spin relaxation rates were measured as a function of temperature which allowed us to distinguish between two different mechanisms---D'yakonov-Perel' and Elliott-Yafet---that dominate spin

  15. Langley Spin Tunnel - Free Flight Tunnel - and models

    NASA Technical Reports Server (NTRS)

    1939-01-01

    Model shop for NACA Spin Tunnel and Free Flight Tunnel. Dynamically and geometrically accurate models with movable control surfaces are made here by men whose training as toy model makers is producing valuable results. The models are used for study of the stability and control of aircraft which is an essential basis for safety. Photograph published in Winds of Change, a 75th Anniversary NASA publication (page 10), by James Schultz.

  16. Free-Spinning-Tunnel Investigation of a 1/40-Scale Model of the McConnell F-101A Airplane

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.; Healy, Frederick M.

    1959-01-01

    An investigation has been made in the Langley 20-foot free-spinning tunnel of a 1/40-scale model of the McDonnell F-101A airplane to alleviate the unfavorable spinning characteristics encountered with the airplane. The model results indicate that a suitable strake extended on the inboard side of the nose of the airplane (right side in a right spin) in conjunction with the use of optimum control recovery technique will terminate spin rotation of the airplane. It may be difficult to recover from subsequent high angle-of-attack trimmed flight attitudes even by forward stick movement. The optimum spin-recovery control technique for the McDonnell F-101A is simultaneous full rudder reversal to against the spin and aileron movement to full with the spin (stick full right in a right erect spin) and forward movement of the stick immediately after rotation stops.

  17. Theory of electrically controlled resonant tunneling spin devices

    NASA Technical Reports Server (NTRS)

    Ting, David Z. -Y.; Cartoixa, Xavier

    2004-01-01

    We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

  18. Supplementary Investigation in the Free-Spinning Tunnel of a 1/24-Scale Model of the Grumman F9F-6 Airplane Incorporating only Flaperons for Lateral Control, TED No. NACA DE 364

    NASA Technical Reports Server (NTRS)

    Klinar, Walter J.; Lee, Henry A.

    1954-01-01

    A supplementary investigation was conducted in the Langley 20-foot free-spinning tunnel on a 1/24-scale model of the Grumman F9F-6 airplane. The primary purpose of the investigation was to reevaluate the spin-recovery characteristics of the airplane in view of the fact that the ailerons had been eliminated from the flaperon-aileron lateral control system of the airplane. A spin-tunnel investigation on a model of the earlier version of the F9F-6 airplane had indicated that use of ailerons with the spin (stick right in a right spin) was essential to insure recovery. The results indicate that with.ailerons eliminated, it may be difficult to obtain an erect developed spin but if a fully developed spin is obtained on the airplane, recovery therefrom may be difficult or impossible. Flaperon deflection should have little effect on spins or recoveries.

  19. Simulations of Resonant Intraband and Interband Tunneling Spin Filters

    NASA Technical Reports Server (NTRS)

    Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

    2001-01-01

    This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

  20. Quantum Adiabatic Algorithms and Large Spin Tunnelling

    NASA Technical Reports Server (NTRS)

    Boulatov, A.; Smelyanskiy, V. N.

    2003-01-01

    We provide a theoretical study of the quantum adiabatic evolution algorithm with different evolution paths proposed in this paper. The algorithm is applied to a random binary optimization problem (a version of the 3-Satisfiability problem) where the n-bit cost function is symmetric with respect to the permutation of individual bits. The evolution paths are produced, using the generic control Hamiltonians H (r) that preserve the bit symmetry of the underlying optimization problem. In the case where the ground state of H(0) coincides with the totally-symmetric state of an n-qubit system the algorithm dynamics is completely described in terms of the motion of a spin-n/2. We show that different control Hamiltonians can be parameterized by a set of independent parameters that are expansion coefficients of H (r) in a certain universal set of operators. Only one of these operators can be responsible for avoiding the tunnelling in the spin-n/2 system during the quantum adiabatic algorithm. We show that it is possible to select a coefficient for this operator that guarantees a polynomial complexity of the algorithm for all problem instances. We show that a successful evolution path of the algorithm always corresponds to the trajectory of a classical spin-n/2 and provide a complete characterization of such paths.

  1. Spin-Tunnel Investigation of a 1/28-Scale Model of the NASA F-18 High Alpha Research Vehicle (HARV) with and without Vertical Tails

    NASA Technical Reports Server (NTRS)

    Fremaux, C. Michael

    1997-01-01

    An investigation was conducted in the NASA Langley 20-Foot Vertical Spin Tunnel to determine the developed spin and spin-recovery characteristics of a 1/28-scale, free-spinning model of the NASA F-18 HARV (High Alpha Research Vehicle) airplane that can configured with and without the vertical tails installed. The purpose of the test was to determine what effects, if any, the absence of vertical tails (and rudders) had on the spin and spin-recovery capabilities of the HARV. The model was ballasted to dynamically represent the full-scale airplane at an altitude of 25,000 feet. Erect and inverted spin tests with symmetric mass loadings were conducted with the free-spinning model. The model results indicate that the basic airplane with vertical tails installed (with unaugmented control system) will exhibit fast, flat erect and inverted spins from which acceptable recoveries can be made. Removing the vertical tails had little effect on the erect spin mode, but did degrade recoveries from erect spins. In contrast, inverted spins without the vertical tails were significantly more severe than those with the tails installed.

  2. Inelastic electron tunneling spectroscopy of a single nuclear spin.

    PubMed

    Delgado, F; Fernández-Rossier, J

    2011-08-12

    Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

  3. Dynamic Model Tests of Models in the McDonnell Design of Project Mercury Capsule in the Langley 20-Foot Free-Spinning Tunnel

    NASA Technical Reports Server (NTRS)

    1959-01-01

    On 11 May 1959, 24 tests of the aerodynamic response of the McDonnell model Project Mercury capsule were conducted. The initial test demonstrated free-fall; a parachute was used in the remaining test. Several tests included the addition of baffles.

  4. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  5. Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Friedman, Adam L.

    2015-09-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

  6. GMAG Dissertation Award: Tunnel spin injectors for semiconductor spintronics

    NASA Astrophysics Data System (ADS)

    Jiang, Xin

    2004-03-01

    Spin-based electronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The magneto-transport properties of two families of tunnel spin injectors will be discussed. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence (EL) from a quantum well light emitting diode structure. The temperature and bias dependence of the EL polarization provides insight into the mechanism of spin relaxation within the semiconductor heterostructure. Collaborators: Roger Wang^1,2, Sebastiaan van Dijken^1,*, Robert Shelby^1, Roger Macfarlane^1, Seth Bank^2, Glenn Solomon^2, James Harris^2, and Stuart S. P. Parkin^1 * Currently at Trinity College, Dublin, Ireland

  7. Free-spinning-tunnel Investigation of a 1/30 Scale Model of a Twin-jet-swept-wing Fighter Airplane

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.; Healy, Frederick M.

    1960-01-01

    An investigation has been made in the Langley 20-foot free-spinning tunnel to determine the erect and inverted spin and recovery characteristics of a 1/30-scale dynamic model of a twin-jet swept-wing fighter airplane. The model results indicate that the optimum erect spin recovery technique determined (simultaneous rudder reversal to full against the spin and aileron deflection to full with the spin) will provide satisfactory recovery from steep-type spins obtained on the airplane. It is considered that the air-plane will not readily enter flat-type spins, also indicated as possible by the model tests, but developed-spin conditions should be avoided in as much as the optimum recovery procedure may not provide satisfactory recovery if the airplane encounters a flat-type developed spin. Satisfactory recovery from inverted spins will be obtained on the airplane by neutralization of all controls. A 30-foot- diameter (laid-out-flat) stable tail parachute having a drag coefficient of 0.67 and a towline length of 27.5 feet will be satisfactory for emergency spin recovery.

  8. Free-Spinning-Tunnel Investigation of a 1/20-Scale Model of the North American T2J-1 Airplane

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.; Healy, Frederick M.

    1959-01-01

    An investigation has been made in the Langley 20-foot free-spinning tunnel to determine the erect and inverted spin and recovery characteristics of a 1/20-scale dynamic model of the North American T2J-1 airplane. The model results indicate that the optimum technique for recovery from erect spins of the airplane will be dependent on the distribution of the disposable load. The recommended recovery procedure for spins encountered at the flight design gross weight is simultaneous rudder reversal to against the spin and aileron movement to with the spin. With full wingtip tanks plus rocket installation and full internal fuel load, rudder reversal should be followed by a downward movement of the elevator. For the flight design gross weight plus partially full wingtip tanks, recovery should be attempted by simultaneous rudder reversal to against the spin, movement of ailerons to with the spin, and ejection of the wing-tip tanks. The optimum recovery technique for airplane-inverted spins is rudder reversal to against the spin with the stick maintained longitudinally and laterally neutral.

  9. Giant spin-dependent thermoelectric effect in magnetic tunnel junctions.

    PubMed

    Lin, Weiwei; Hehn, Michel; Chaput, Laurent; Negulescu, Béatrice; Andrieu, Stéphane; Montaigne, François; Mangin, Stéphane

    2012-01-01

    Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents, which are key elements of spin-based electronics. Here we report on a giant magnetothermoelectric effect in a magnetic tunnel junction. The thermovoltage in this geometry can reach 1 mV. Moreover a magnetothermovoltage effect could be measured with ratio similar to the tunnel magnetoresistance ratio. The Seebeck coefficient can then be tuned by changing the relative magnetization orientation of the two magnetic layers in the tunnel junction. Therefore, our experiments extend the range of spintronic devices application to thermoelectricity and provide a crucial piece of information for understanding the physics of thermal spin transport. PMID:22434187

  10. Hybrid magnetic tunnel junction/spin filter device

    SciTech Connect

    Suzuki, Y.; Nelson-Cheeseman, B.; Wong, F.; Chopdekar, R.; Arenholz, E.; Chi, Miaofang; Browning, Nigel

    2008-07-10

    Surfaces and interfaces of complex oxides materials provide a rich playground for the exploration of novel magnetic properties not found in the bulk but also the development of functional interfaces to be incorporated into applications. We have recently been able to demonstrate a new type of hybrid spin filter/ magnetic tunnel junction. Our hybrid spin-filter/magnetic-tunnel junction devices are epitaxial oxide junctions of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and Fe{sub 3}O{sub 4} electrodes with magnetic NiMn{sub 2}O{sub 4} barrier layers. Depending on whether the barrier is in a paramagnetic or ferromagnetic state, the junction exhibits magnetic tunnel junction behavior where the spin polarized conduction is dominated by the electrode-barrier interface or spin filter behavior where conduction is dominated by barrier layer magnetism.

  11. Free-Spinning-Tunnel Investigation of a 1/25-Scale Model of the Chance Vought F8U-1P Airplane

    NASA Technical Reports Server (NTRS)

    Browman, James S., Jr.; Healy, Frederick M.

    1959-01-01

    An investigation has been made in the Langley 20-foot free-spinning tunnel on a 1/25-scale dynamic model to determine the spin and recovery characteristics of the Chance Vought F8U-1P airplane. Results indicated that the F8U-IP airplane would have spin-recovery characteristics similar to the XF8U-1 design, a model of which was tested and the results of the tests reported in NACA Research Memorandum SL56L31b. The results indicate that some modification in the design, or some special technique for recovery, is required in order to insure satisfactory recovery from fully developed erect spins. The recommended recovery technique for the F8U-lP will be full rudder reversal and movement of ailerons full with the spin (stick right in a right spin) with full deflection of the wing leading- edge flap. Inverted spins will be difficult to obtain and any inverted spin obtained should be readily terminated by full rudder reversal to oppose the yawing rotation and neutralization of the longitudinal and lateral controls. In an emergency, the same size parachute recommended for the XFBU-1 airplane will be adequate for termination of the spin: a stable parachute 17.7 feet in diameter (projected) with a drag coefficient of 1.14 (based on projected diameter) and a towline length of 36.5 feet.

  12. Free-Spinning-Tunnel Investigation of a 1/24-Scale Model of the Grumman F9F-6 Airplane TED No. NACA DE 364

    NASA Technical Reports Server (NTRS)

    Klinar, Walter J.; Healy, Frederick M.

    1952-01-01

    An investigation of a 1/24-scale model of the Grumman F9F-6 airplane has been conducted in the Langley 20-foot free-spinning tunnel. The erect and inverted spin and recovery characteristics of the model were determined for the normal flight loading with the model in the clean condition. The effect of loading variations was investigated briefly. Spin-recovery parachute tests were also performed. The results indicate that erect spins obtained on the airplane in the clean condition will be satisfactorily terminated for all loading conditions provided full rudder reversal is accompanied by moving the ailerons and flaperons (lateral controls) to full with the spin (stick right in a right spin). Inverted spins should be satisfactorily terminated by full reversal of the rudder alone. The model tests indicate that an 11.4-foot (laid-out-flat diameter) tail parachute (drag coefficient approximately 0.73) should be effective as an emergency spin-recovery device during demonstration spins of the airplane provided the towline is attached above the horizontal stabilizer.

  13. Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

    SciTech Connect

    Cubukcu, M.; Laczkowski, P.; Vergnaud, C.; Marty, A.; Attané, J.-P.; Notin, L.; Vila, L. Jamet, M.; Martin, M.-B.; Seneor, P.; Anane, A.; Deranlot, C.; Fert, A.; Auffret, S.; Ducruet, C.

    2015-02-28

    We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (up to ∼2 Ω) is obtained with direct contacts, the signal is strongly enhanced (∼400 Ω) by inserting a tunnel barrier. In addition, we studied the resistance-area product (R.A) of a variety of contacts on CVD graphene. In particular, we compared the R.A products of alumina and magnesium oxide tunnel barriers grown by sputtering deposition of aluminum or magnesium and subsequent natural oxidation under pure oxygen atmosphere or by plasma. When using an alumina tunnel barrier on CVD graphene, the R.A product is high and exhibits a large dispersion. This dispersion can be highly reduced by using a magnesium oxide tunnel barrier, as for the R.A value. This study gives insight in the material quest for reproducible and efficient spin injection in CVD graphene.

  14. Free-Spinning-Tunnel Tests of a 1/24-Scale Model of the North American XP-86 Airplane

    NASA Technical Reports Server (NTRS)

    Berman, Theodore

    1948-01-01

    A spin investigation has been conducted in the Langley 20-foot free-spinning tunnel on a 1/24-scale model of the North American XP-86 airplane. The effects of control settings and movements upon the erect and inverted spin and recovery characteristics of the model were determined for the design gross weight loading. The long-range loading was also investigated and the effects of extending slats and dive flaps were determined. In addition, the investigation included the determination of the size of spin-recovery parachute required for emergency recovery from demonstration spins, the rudder force required to move the rudder for recovery, and the best method for the pilot to escape if it should become necessary to do so during a spin. The results of the investigation indicated that the XP-86 airplane will probably recover satisfactorily from erect and inverted spins for all possible loadings. It was found that fully extending both slats would be beneficial but that extending the dive brakes would cause unsatisfactory recoveries. It was determined that a 10.0-foot-diameter tail parachute with a drag coefficient of 0.7 and with a towline 30.0 feet long attached below the jet exit or a 6.0-foot-diameter wingtip parachute opened on the outer wing tip with a towline 6.0 feet long would insure recoveries from any spins obtainable. The rudder-pedal force necessary to move the rudder for satisfactory recovery was found to be within the physical capabilities of the pilot.

  15. Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

    NASA Astrophysics Data System (ADS)

    Singh, Simranjeet; Katoch, Jyoti; Xu, Jinsong; Tan, Cheng; Zhu, Tiancong; Amamou, Walid; Hone, James; Kawakami, Roland

    2016-09-01

    We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene.

  16. Spin Tunneling in Ferromagnetic and Half-metallic Junctions.

    NASA Astrophysics Data System (ADS)

    Bratkovsky, Alexander

    1998-03-01

    Direct tunneling in ferromagnetic junctions is compared with impurity-assisted, surface states, and inelastic contribution to a tunnel magnetoresistance (TMR). Direct tunneling in iron group systems leads to about a 30% change in resistance, which is close to observed values. It is shown that the larger observed values of the tunnel TMR might be a result of tunneling involving surface polarized states. We find that a tunneling via resonant defect states in the barrier radically decreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunnel diode structure would give the TMR of about 8%. (A.M. Bratkovsky, Phys. Rev. B 56), 2344 (1997). With regards to the inelastic tunneling it is interesting to note an opposite role of magnons and phonons: one-magnon emission generally results in a spin mixing and, consequently, reduces the TMR, whereas phonons tend to enhance the TMR. Inclusion of phonons allows to reasonably fit an unusual bias dependence of the TMR. The model applies qualitatively to half-metallics with 100% spin polarization, where one-magnon processes are suppressed and the change in resistance in the absence of spin-mixing on impurities may be arbitrarily large. Even in the case of imperfect magnetic configurations the resistance change can be a few 1000 percent.^1 Examples of the half-metallic systems which could operate at room temperature are CrO_2/TiO2 and CrO_2/RuO_2, and an account of their peculiar band structures is presented. Implications and relation to a CMR materials which are close to the half-metallic behavior are discussed.

  17. Reentry Body Stability Tests Conducted in Langley Spin Tunnel

    NASA Technical Reports Server (NTRS)

    1958-01-01

    Reentry Body Stability Tests Conducted in Langley Spin Tunnel. Reentry body stability tests were conducted in an initial configuration, with a small drogue chute, with an extendable flare, and in an alternate configuration with a covered flare. [Entire movie available on DVD from CASI as Doc ID 20070030957. Contact help@sti.nasa.gov

  18. Spin-polarized tunneling in MgO-based tunnel junctions with superconducting electrodes

    NASA Astrophysics Data System (ADS)

    Schebaum, Oliver; Fabretti, Savio; Moodera, Jagadeesh S.; Thomas, Andy

    2012-03-01

    We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al-Si electrode. Pure cobalt electrodes were compared with a Co-Fe-B alloy and the Heusler compound Co2FeAl. The polarization of the tunneling electrons was determined using the Maki-Fulde model and is discussed along with the spin-orbit scattering and the total pair-breaking parameters. The junctions were post-annealed at different temperatures to investigate the symmetry filtering mechanism responsible for the giant tunneling magnetoresistance ratios in Co-Fe-B/MgO/Co-Fe-B junctions.

  19. Giant thermal spin-torque–assisted magnetic tunnel junction switching

    PubMed Central

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Parkin, Stuart S. P.

    2015-01-01

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. PMID:25971730

  20. Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.

    PubMed

    Gould, C; Rüster, C; Jungwirth, T; Girgis, E; Schott, G M; Giraud, R; Brunner, K; Schmidt, G; Molenkamp, L W

    2004-09-10

    We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material. PMID:15447375

  1. Free-Spinning-Tunnel Investigation to Determine the Effect of Spin-Recovery Rockets and Thrust Simulation on the Recovery Characteristics of a 1/21-Scale Model of the Chance Vought F7U-3 Airplane, TED No. NACA AD 3103

    NASA Technical Reports Server (NTRS)

    Burk, Sanger H., Jr.; Healy, Frederick M.

    1955-01-01

    An investigation of a l/21-scale model of the Chance Vought F7U-3 airplane in the co&at-load- condition has been conducted in the Langley 20-foot free-spinning tunnel, The recovery characteristics of the model were determined by use of spin-recovery rockets for the erect and inverted spinning condition. The rockets were so placed as to provide either a yawing or rolling moment about the model center of gravity. Also included in the investigation were tests to determine the effect of simulated engine thrust on the recovery characteristics of the model. On the basis of model tests, recoveries from erect and inverted spins were satisfactory when a yawing moment of 22,200 foot-pounds (full scale) was provided against the spin by rockets attached to the wing tips; the anti-spin yawing moment was applied for approximately 9 seconds, (full scale). Satisfactory recoveries were obtained from erect spins when a rolling moment of 22,200 foot-pounds (full scale) was provided with the spin (rolls right wing down in right spin). Although the inverted spin was satisfactorily terminated when a rolling moment of equal magnitude was provided, a roll rocket was not considered to be an optimum spin-recovery device to effect recoveries from inverted spins for this airplane because of resulting gyrations during spin recovery. Simulation of engine thrust had no apparent effect on the spin recovery characteristics.

  2. Investigation of Spinning and Tumbling Characteristics of a 1/20-Scale Model of the Consolidated Vultee XFY-1 Airplane in the Free-Spinning Tunnel, TED No. NACA DE 370

    NASA Technical Reports Server (NTRS)

    Lee, Henry A.

    1952-01-01

    An investigation has been conducted in the Langley 20-foot free-spinning tunnel on a l/20-scale model of the Consolidated Vultee XFY-1 airplane with a windmilling propeller simulated to determine the effects of control setting and movements upon the erect spin and recovery characteristics for a range of airplane-loading conditions. The effects on the model's spin-recovery characteristics of removing the lower vertical tail, removing the gun pods, and fixing the rudders at neutral were also investigated briefly. The investigation included determination of the size parachute required for emergency recovery from demonstration spins. The tumbling tendencies of the model were also investigated. Brief static force tests were made to determine the aerodynamic characteristics in pitch at high angles of attack. The investigation indicated that the spin and recovery characteristics of the airplane with propeller windmilling will be satisfactory for all loading conditions if recovery is attempted by full rudder reversal accompanied by simultaneous movement of the stick laterally to full with the spin (stick right in a right spin) and longitudinally to neutral. Inverted spins should be satisfactorily terminated by fully reversing the rudder followed immediately by moving the stick laterally towards the forward rudder pedal and longitudinally to neutral. Removal of the gun pods or fixing the rudders at neutral will not adversely affect the airplane's spin-recovery characteristics, but removal of the lower vertical tail will result in unsatisfactory spin-recovery characteristics. The model-test results showed that a 13.3-foot wing-tip conventional parachute (drag coefficient approximately 0.7) should be effective as an emergency spin-recovery device during demonstration spins of the airplane. It was indicated that the airplane should not tumble and that no unusual longitudinal-trim characteristics should be obtained for the center-of-gravity positions investigated.

  3. How to reveal metastable skyrmionic spin structures by spin-polarized scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Dupé, B.; Kruse, C. N.; Dornheim, T.; Heinze, S.

    2016-05-01

    We predict the occurrence of metastable skyrmionic spin structures such as antiskyrmions and higher-order skyrmions in ultra-thin transition-metal films at surfaces using Monte Carlo simulations based on a spin Hamiltonian parametrized from density functional theory calculations. We show that such spin structures will appear with a similar contrast in spin-polarized scanning tunneling microscopy images. Both skyrmions and antiskyrmions display a circular shape for out-of-plane magnetized tips and a two-lobe butterfly contrast for in-plane tips. An unambiguous distinction can be achieved by rotating the tip magnetization direction without requiring the information of all components of the magnetization.

  4. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    PubMed Central

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-01-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

  5. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    NASA Astrophysics Data System (ADS)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-12-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

  6. Quantum revivals and magnetization tunneling in effective spin systems

    NASA Astrophysics Data System (ADS)

    Krizanac, M.; Altwein, D.; Vedmedenko, E. Y.; Wiesendanger, R.

    2016-03-01

    Quantum mechanical objects or nano-objects have been proposed as bits for information storage. While time-averaged properties of magnetic, quantum-mechanical particles have been extensively studied experimentally and theoretically, experimental investigations of the real time evolution of magnetization in the quantum regime were not possible until recent developments in pump-probe techniques. Here we investigate the quantum dynamics of effective spin systems by means of analytical and numerical treatments. Particular attention is paid to the quantum revival time and its relation to the magnetization tunneling. The quantum revival time has been initially defined as the recurrence time of a total wave-function. Here we show that the quantum revivals of wave-functions and expectation values in spin systems may be quite different which gives rise to a more sophisticated definition of the quantum revival within the realm of experimental research. Particularly, the revival times for integer spins coincide which is not the case for half-integer spins. Furthermore, the quantum revival is found to be shortest for integer ratios between the on-site anisotropy and an external magnetic field paving the way to novel methods of anisotropy measurements. We show that the quantum tunneling of magnetization at avoided level crossing is coherent to the quantum revival time of expectation values, leading to a connection between these two fundamental properties of quantum mechanical spins.

  7. Magnified Spin-Motive Forces in MRAM Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Barnes, Stewart

    2014-03-01

    In the Slonczewski 2005 theory for spin-torque-transfer (STT) of a magnetic tunnel junction (MTJ) the tunnelling magneto resistance (TMR) and Gilbert damping parameter α are of key importance. However the observed critical voltage from the switching of STT-MRAM implies a α ten times that measured by ferromagnetic resonance (FMR). In addition the TMR is strongly voltage dependent while the STT effect is not. This along with the weak dependence of the critical current on switching direction are inconsistent with the tunnelling model and have never been properly explained. Here will be described a circuit model based upon SU(2) theory for a MTJ for which the basic SMF of about 10 μV is magnified to a 200mV shift between the parallel P and anti-parallel AP branches of the IV characteristic. It is implied that the TMR has for origin an SMF.

  8. Spin Hall effect of light in photon tunneling

    SciTech Connect

    Luo Hailu; Wen Shuangchun; Shu Weixing; Fan Dianyuan

    2010-10-15

    We resolve the breakdown of angular momentum conservation on two-dimensional photon tunneling by considering the spin Hall effect (SHE) of light. This effect manifests itself as polarization-dependent transverse shifts of the field centroid when a classic wave packet tunnels through a prism-air-prism barrier. For the left or the right circularly polarized component, the transverse shift can be modulated by altering the refractive index gradient associated with the two prisms. We find that the SHE in conventional beam refraction can be evidently enhanced via photon tunneling mechanism. The transverse spatial shift is governed by the total angular momentum conservation law, while the transverse angular shift is governed by the total linear momentum conservation law. These findings open the possibility for developing new nanophotonic devices and can be extrapolated to other physical systems.

  9. Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

    PubMed

    Bode, Matthias

    2012-01-01

    The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures. PMID:22546192

  10. Hydrogenated Graphene as a Homoepitaxial Tunnel Barrier for Spin and Charge Transport in Graphene.

    PubMed

    Friedman, Adam L; van 't Erve, Olaf M J; Robinson, Jeremy T; Whitener, Keith E; Jonker, Berend T

    2015-07-28

    We demonstrate that hydrogenated graphene performs as a homoepitaxial tunnel barrier on a graphene charge/spin channel. We examine the tunneling behavior through measuring the IV curves and zero bias resistance. We also fabricate hydrogenated graphene/graphene nonlocal spin valves and measure the spin lifetimes using the Hanle effect, with spintronic nonlocal spin valve operation demonstrated up to room temperature. We show that while hydrogenated graphene indeed allows for spin transport in graphene and has many advantages over oxide tunnel barriers, it does not perform as well as similar fluorinated graphene/graphene devices, possibly due to the presence of magnetic moments in the hydrogenated graphene that act as spin scatterers.

  11. Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport.

    PubMed

    Friedman, Adam L; van 't Erve, Olaf M J; Li, Connie H; Robinson, Jeremy T; Jonker, Berend T

    2014-01-01

    The coupled imperatives for reduced heat dissipation and power consumption in high-density electronics have rekindled interest in devices based on tunnelling. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, layer uniformity, interface stability and electronic states that severely complicate fabrication and compromise performance. Two-dimensional materials such as graphene obviate these issues and offer a new paradigm for tunnel barriers. Here we demonstrate a homoepitaxial tunnel barrier structure in which graphene serves as both the tunnel barrier and the high-mobility transport channel. We fluorinate the top layer of a graphene bilayer to decouple it from the bottom layer, so that it serves as a single-monolayer tunnel barrier for both charge and spin injection into the lower graphene channel. We demonstrate high spin injection efficiency with a tunnelling spin polarization >60%, lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the Hanle effect.

  12. Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport.

    PubMed

    Friedman, Adam L; van 't Erve, Olaf M J; Li, Connie H; Robinson, Jeremy T; Jonker, Berend T

    2014-01-01

    The coupled imperatives for reduced heat dissipation and power consumption in high-density electronics have rekindled interest in devices based on tunnelling. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, layer uniformity, interface stability and electronic states that severely complicate fabrication and compromise performance. Two-dimensional materials such as graphene obviate these issues and offer a new paradigm for tunnel barriers. Here we demonstrate a homoepitaxial tunnel barrier structure in which graphene serves as both the tunnel barrier and the high-mobility transport channel. We fluorinate the top layer of a graphene bilayer to decouple it from the bottom layer, so that it serves as a single-monolayer tunnel barrier for both charge and spin injection into the lower graphene channel. We demonstrate high spin injection efficiency with a tunnelling spin polarization >60%, lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the Hanle effect. PMID:24445349

  13. New method to study spin conversion of a nuclear-spin rotor with low tunnel splitting

    NASA Astrophysics Data System (ADS)

    Vandemaele, Greta; Coppens, Paul; van Gerven, Lieven

    1986-03-01

    A new method is developed to measure the spin conversion time τcon in low-tunnel-frequency systems. The experiment uses field cycling and consists of three steps: saturation of the tunnel reservoir by Zeeman-tunnel resonance; waiting, away from resonance, during a variable time interval tw; and measurement of the decreased tunnel temperature TT, by use of a saturated Zeeman reservoir. A plot of TT vs tw yields τcon. τcon of CH3 rotors in copper acetate is measured at 15, 12.5, and 6 K and turns out to be extremely long, at least 20T1. This discrepancy is discussed and compared with the one found in lithium acetate.

  14. Free-Spinning Tunnel Tests of a 1/24-Scale Model of the Grumman XTB3F-1 Airplane, TED No. NACA DE304

    NASA Technical Reports Server (NTRS)

    Berman, Theodore

    1947-01-01

    In accordance with a request of the Bureau of Aeronautics, Navy Department, tests were performed in the Langley 20-foot free-spinning tunnel to determine the spin and recovery characteristics of a 1/24 scale model of the Grumman XTB3F-1 airplane. The airplane is a two-place, midwing torpedo bomber equipped with a tractor propeller and an auxiliary jet engine. The effect of control setting and movement on the erect and inverted spin and recovery characteristics of the model were determined for the normal loading. Brief tests with mass extended slightly along the fuselage were also made, however, in order to determine the effect of such a mass variation on elevator effectiveness. Tests were performed to determine the size of emergency spin-recovery tail and wing-tip parachutes required for satisfactory recovery by parachute action alone. The investigation also included emergency pilot-escape tests and tests to determine the rudder pedal and elevator stick forces necessary to move the rudder and elevator for recovery.

  15. Supplementary Investigation in the Langley Free-Spinning Tunnel of a 1/20-Scale Model of the Douglas XF4D-1 Airplane Including Spin-Recovery Parachute Tests of the Model Loaded to Simulate the Douglas F5D-1 Airplane

    NASA Technical Reports Server (NTRS)

    Klinar, Walter J.; Lee, Henry A.

    1955-01-01

    A supplementary investigation has been conducted in the Langley 20-foot free-spinning tunnel of a l/20-scale model of the Douglas XF4D-1 airplane to determine the effect of only neutralizing the rudder for recovery from an inverted spin, and the effect of partial aileron deflection with the spin for recovery from an erect spin. An estimation of the size parachute required for satisfactory recovery from a spin with the model ballasted to represent the Douglas F5D-1 (formerly the Douglas XF4D-2) airplane was also made. Results of the original investigation on the XF4D-1 design are presented in NACA RM SL50K30a. The results indicated that satisfactory recoveries from inverted spins of the airplane should be obtained by rudder neutralization when the longitudinal stick position is neutral or forward. Recoveries from erect spins from the normal-spin control configuration should be satisfactory by full rudder reversal with simultaneous movement of the ailerons to two-thirds with the spin. For the parachute tests with the model loaded to represent the F5D-1 airplane, the tests indicated that a 16.7-foot-diameter hemispherical-tail parachute (drag coefficient of 1.082 based on the projected area) with a towline 20.0 feet long (full- scale values) should be satisfactory for an emergency spin-recovery device during demonstration spins of the airplane.

  16. Majorana fermion fingerprints in spin-polarised scanning tunnelling microscopy

    NASA Astrophysics Data System (ADS)

    Kotetes, Panagiotis; Mendler, Daniel; Heimes, Andreas; Schön, Gerd

    2015-11-01

    We calculate the spatially resolved tunnelling conductance of topological superconductors (TSCs) based on ferromagnetic chains, measured by means of spin-polarised scanning tunnelling microscopy (SPSTM). Our analysis reveals novel signatures of MFs arising from the interplay of their strongly anisotropic spin-polarisation and the magnetisation content of the tip. We focus on the deep Yu-Shiba-Rusinov (YSR) limit where only YSR bound states localised in the vicinity of the adatoms govern the low-energy as also the topological properties of the system. Under these conditions, we investigate the occurrence of zero/finite bias peaks (ZBPs/FBPs) for a single or two coupled TSC chains forming a Josephson junction. Each TSC can host up to two Majorana fermions (MFs) per edge if chiral symmetry is preserved. Here we retrieve the conductance for all the accessible configurations of the MF number of each chain. Our results illustrate innovative spin-polarisation-sensitive experimental routes for arresting the MFs by either restoring or splitting the ZBP in a predictable fashion via: (i) weakly breaking chiral symmetry, e.g. by the SPSTM tip itself or by an external Zeeman field and (ii) tuning the superconducting phase difference of the TSCs, which is encoded in the 4π-Josephson coupling of neighbouring MFs.

  17. Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

    PubMed Central

    Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

    2014-01-01

    Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

  18. Resonant Tunneling of Spin-Wave Packets via Quantized States in Potential Wells

    NASA Astrophysics Data System (ADS)

    Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E.; Demokritov, Sergej O.

    2007-09-01

    We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

  19. Thermal spin-transfer torque in magnetic tunnel junctions (invited)

    SciTech Connect

    Heiliger, Christian Franz, C.; Czerner, Michael

    2014-05-07

    The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of magnetic layer composition by considering Fe{sub x}Co{sub 1–x} alloys. Further, we compare the TSTT to the bias voltage driven STT and discuss the requirements for a possible thermal switching. For example, only for very thin barriers of 3 monolayers MgO, a thermal switching is imaginable. However, even for such a thin barrier, the TSTT is still too small for switching at the moment and further optimization is needed. In particular, the TSTT strongly depends on the composition of the ferromagnetic layer. In our current study, it turns out that at the chosen thickness of the ferromagnetic layer, pure Fe gives the highest thermal spin-transfer torque.

  20. Macroscopic quantum tunnelling in spin filter ferromagnetic Josephson junctions.

    PubMed

    Massarotti, D; Pal, A; Rotoli, G; Longobardi, L; Blamire, M G; Tafuri, F

    2015-01-01

    The interfacial coupling of two materials with different ordered phases, such as a superconductor (S) and a ferromagnet (F), is driving new fundamental physics and innovative applications. For example, the creation of spin-filter Josephson junctions and the demonstration of triplet supercurrents have suggested the potential of a dissipationless version of spintronics based on unconventional superconductivity. Here we demonstrate evidence for active quantum applications of S-F-S junctions, through the observation of macroscopic quantum tunnelling in Josephson junctions with GdN ferromagnetic insulator barriers. We show a clear transition from thermal to quantum regime at a crossover temperature of about 100 mK at zero magnetic field in junctions, which present clear signatures of unconventional superconductivity. Following previous demonstration of passive S-F-S phase shifters in a phase qubit, our result paves the way to the active use of spin filter Josephson systems in quantum hybrid circuits. PMID:26054495

  1. Macroscopic quantum tunnelling in spin filter ferromagnetic Josephson junctions

    PubMed Central

    Massarotti, D.; Pal, A.; Rotoli, G.; Longobardi, L.; Blamire, M. G.; Tafuri, F.

    2015-01-01

    The interfacial coupling of two materials with different ordered phases, such as a superconductor (S) and a ferromagnet (F), is driving new fundamental physics and innovative applications. For example, the creation of spin-filter Josephson junctions and the demonstration of triplet supercurrents have suggested the potential of a dissipationless version of spintronics based on unconventional superconductivity. Here we demonstrate evidence for active quantum applications of S-F-S junctions, through the observation of macroscopic quantum tunnelling in Josephson junctions with GdN ferromagnetic insulator barriers. We show a clear transition from thermal to quantum regime at a crossover temperature of about 100 mK at zero magnetic field in junctions, which present clear signatures of unconventional superconductivity. Following previous demonstration of passive S-F-S phase shifters in a phase qubit, our result paves the way to the active use of spin filter Josephson systems in quantum hybrid circuits. PMID:26054495

  2. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    SciTech Connect

    Manipatruni, Sasikanth Nikonov, Dmitri E.; Young, Ian A.

    2014-05-07

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

  3. Oliver E. Buckley Prize Talk: Spin polarized tunneling and tunnel magnetoresistance -- Learning from the past and moving forward

    NASA Astrophysics Data System (ADS)

    Moodera, Jagadeesh

    2009-03-01

    Electron tunneling phenomenon has contributed enormously to our understanding of various branches of physics over the years. The technique of spin polarized tunneling (SPT), sensing the spin polarization of tunneling electrons using a superconducting spin detector, discovered by Meservey and Tedrow in the early seventies has been successfully utilized over the years to understand many aspects of magnetism and superconductivity. Electrical spin injection/detection in a semiconductor is strongly believed to succeed through such an approach. The successful observation of a large change in tunnel current in magnetic tunnel junctions (MTJ) in the mid nineties has brought extreme activity in this field -- both from fundamental study as well as extensive application in mind (as sensors, nonvolatile memory devices, logic elements etc). From the early history of this field that led to the discovery of room temperature TMR effect to the observation of many novel phenomena to the exciting recent work on spin filtering, spin transport in semiconductors to toggling of the superconducting state with spin current will be highlighted and reviewed. Work done in collaboration with Drs. Meservey and Tedrow, PhD students, postdoctorals, as well as high school students and undergraduates. NSF, ONR, DARPA and KIST-MIT project funds supported the research over the years.

  4. Quantum tunneling of massive spin-1 particles from non-stationary metrics

    NASA Astrophysics Data System (ADS)

    Sakalli, I.; Övgün, A.

    2016-01-01

    We focus on the HR of massive vector (spin-1) particles tunneling from Schwarzschild BH expressed in the Kruskal-Szekeres and dynamic Lemaitre coordinates. Using the Proca equation together with the Hamilton-Jacobi and the WKB methods, we show that the tunneling rate, and its consequence Hawking temperature are well recovered by the quantum tunneling of the massive vector particles.

  5. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers.

    PubMed

    Park, B G; Banerjee, T; Lodder, J C; Jansen, R

    2007-11-23

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the same device. The intrinsic TSP is reduced below the Fermi level, and more strongly so for tunneling into empty states above the Fermi level. For artificially doped barriers, the low bias TMR decreases due to defect-assisted tunneling. Yet, this mechanism becomes ineffective at large bias, where instead inelastic spin scattering causes a strong TMR decay.

  6. Spin diode based on Fe/MgO double tunnel junction.

    PubMed

    Iovan, A; Andersson, S; Naidyuk, Yu G; Vedyaev, A; Dieny, B; Korenivski, V

    2008-03-01

    We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high>1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, approximately 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications. PMID:18284216

  7. Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque

    NASA Astrophysics Data System (ADS)

    Wang, Zhaohao; Zhao, Weisheng; Deng, Erya; Klein, Jacques-Olivier; Chappert, Claude

    2015-02-01

    We investigate the magnetization switching induced by spin-Hall-assisted spin-transfer torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic tunnel junction (MTJ) and an β-W strip. Magnetization dynamics in free layer of MTJ is simulated by solving numerically a modified Landau-Lifshitz-Gilbert equation. The influences of spin-Hall write current (density, duration and direction) on the STT switching are evaluated. We find that the switching speed of a STT-MTJ can be significantly improved (reduced to <1 ns) by using a sufficiently large spin-Hall write current density (~25 MA cm-2) with an appropriate duration (~0.5 ns). Finally we develop an electrical model of three-terminal MTJ/β-W device with Verilog-A language and perform transient simulation of switching a 4 T/1MTJ/1β-W memory cell with Spectre simulator. Simulation results demonstrate that spin-Hall-assisted STT-MTJ has advantages over conventional STT-MTJ in write speed and energy.

  8. Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

    NASA Astrophysics Data System (ADS)

    Dartora, C. A.; Nobrega, K. Z.; Cabrera, G. G.

    2016-08-01

    Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

  9. First-principles study of spin transport in Fe-SiCNT-Fe magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Choudhary, Sudhanshu; Jalu, Surendra

    2015-08-01

    We report first-principles calculations of spin-dependent quantum transport in Fe-SiCNT-Fe magnetic tunnel junction (MTJ). Perfect spin filtration effect and substantial tunnel magnetoresistance are obtained, which suggests SiCNTs as a suitable candidate over CNTs for implementing 1D MTJs. The calculated tunnel magnetoresistance is several hundred percent at zero bias voltage, it reduces to nearly zero after the bias voltage of about 1 V. When the orientation of magnetic configurations of both electrodes is parallel, the zero bias spin injection factor is staggering 99% and remains reasonably high in the range of 60%-75% after the bias voltage of 0.6 V.

  10. Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

    SciTech Connect

    Santos, T. S.; Moodera, J. S.; Venkataraman, K.; Negusse, E.; Holroyd, J.; Dvorak, J.; Liberati, M.; Idzerda, Y. U.; Arenholz, E.

    2008-06-24

    A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons, and is large enough to produce a near fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller et al., Phys. Rev. Lett. 86, 3847 (2001)].

  11. Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor.

    PubMed

    Tran, M; Jaffrès, H; Deranlot, C; George, J-M; Fert, A; Miard, A; Lemaître, A

    2009-01-23

    We report on spin injection experiments at a Co/Al2O3/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop DeltaV at the interface as high as 1.2 mV for a current density of 0.34 nA.microm(-2). This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al2O3/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers traveling back into the ferromagnetic contact reproduces accurately the experimental results.

  12. Hydrogenated Graphene as a Homoepitaxial Tunnel Barrier for Spin and Charge Transport in Graphene.

    PubMed

    Friedman, Adam L; van 't Erve, Olaf M J; Robinson, Jeremy T; Whitener, Keith E; Jonker, Berend T

    2015-07-28

    We demonstrate that hydrogenated graphene performs as a homoepitaxial tunnel barrier on a graphene charge/spin channel. We examine the tunneling behavior through measuring the IV curves and zero bias resistance. We also fabricate hydrogenated graphene/graphene nonlocal spin valves and measure the spin lifetimes using the Hanle effect, with spintronic nonlocal spin valve operation demonstrated up to room temperature. We show that while hydrogenated graphene indeed allows for spin transport in graphene and has many advantages over oxide tunnel barriers, it does not perform as well as similar fluorinated graphene/graphene devices, possibly due to the presence of magnetic moments in the hydrogenated graphene that act as spin scatterers. PMID:26047069

  13. Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling.

    PubMed

    Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; de la Fuente, César; Arnaudas, José Ignacio

    2015-01-01

    High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths. PMID:26333417

  14. Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling.

    PubMed

    Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; de la Fuente, César; Arnaudas, José Ignacio

    2015-09-03

    High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths.

  15. Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling

    PubMed Central

    Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; Fuente, César de la; Arnaudas, José Ignacio

    2015-01-01

    High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths. PMID:26333417

  16. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory

    NASA Astrophysics Data System (ADS)

    Dill, Joshua Luchay

    This thesis details two experimental methods for quantifying magnetic tunnel junction behavior, namely write error rates and field modulated spin-torque ferromagnetic resonance. The former examines how reliably an applied spin-transfer torque can excite magnetization dynamics that lead to a reversal of magnetization direction while the latter studies steady state dynamics provided by an oscillating spin-transfer torque. These characterization techniques reveal write error rate behavior for a particular composition magnetic tunnel junction that qualitatively deviates from theoretical predictions. Possible origins of this phenomenon are also investigated with the field modulated spin-torque ferromagnetic resonance technique. By understanding the dynamics of magnetic moments predicted by theory, one can experimentally confirm or disprove these theories in order to accurately model and predict tunnel junction behavior. By having a better model for what factors are important in magnetization dynamics, one can optimize these factors in terms of improving magnetic tunnel junctions for their use as computer memory.

  17. Probing the thiol-gold planar interface by spin polarized tunneling

    SciTech Connect

    Zhang, Xiaohang; McGill, Stephen A.; Xiong, Peng; Wang, Xiaolei; Zhao, Jianhua

    2014-04-14

    Reports of induced magnetism at thiol-gold interface have generated considerable recent interest. In these studies, the sample magnetization was generally measured by superconducting quantum interference device magnetometry which has limitation in determining surface and interface magnetism. In this work, we have fabricated planar tunnel junctions incorporating a thiol-gold interface. An observed room temperature humidity effect together with low temperature inelastic electron tunneling spectroscopy confirmed the existence of a thiol-gold interface in the organic-inorganic hybrid heterostructure. Spin polarized tunneling measurements were performed to probe the spin polarization at the thiol-gold interface; however, the obtained spin polarized tunneling spectra indicate no measurable spin polarization at the thiol-gold interface.

  18. Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

    PubMed Central

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

  19. Spin-symmetry conversion in methyl rotors induced by tunnel resonance at low temperature

    SciTech Connect

    Zhang, B.; Sun, C.; Horsewill, A. J.; Alsanoosi, A. M.; Aibout, A.

    2014-02-28

    Field-cycling NMR in the solid state at low temperature (4.2 K) has been employed to measure the tunneling spectra of methyl (CH{sub 3}) rotors in phenylacetone and toluene. The phenomenon of tunnel resonance reveals anomalies in {sup 1}H magnetization from which the following tunnel frequencies have been determined: phenylacetone, ν{sub t} = 6.58 ± 0.08 MHz; toluene, ν{sub t(1)} = 6.45 ± 0.06 GHz and ν{sub t(2)} = 7.07 ± 0.06 GHz. The tunnel frequencies in the two samples differ by three orders of magnitude, meaning different experimental approaches are required. In phenylacetone the magnetization anomalies are observed when the tunnel frequency matches one or two times the {sup 1}H Larmor frequency. In toluene, doping with free radicals enables magnetization anomalies to be observed when the tunnel frequency is equal to the electron spin Larmor frequency. Cross-polarization processes between the tunneling and Zeeman systems are proposed and form the basis of a thermodynamic model to simulate the tunnel resonance spectra. These invoke space-spin interactions to drive the changes in nuclear spin-symmetry. The tunnel resonance lineshapes are explained, showing good quantitative agreement between experiment and simulations.

  20. Spin-transfer torque and specific features of magnetic-state switching in vacuum tunnel nanostructures

    SciTech Connect

    Demin, G. D. Popkov, A. F.; Dyuzhev, N. A.

    2015-12-15

    The specific features of spin-transfer torque in vacuum tunnel structures with magnetic electrodes are investigated using the quasi-classical Sommerfeld model of electron conductivity, which takes into account the exchange splitting of the spin energy subbands of free electrons. Using the calculated voltage dependences of the transferred torques for a tunnel structure with cobalt electrodes and noncollinear magnetic moments in the electrodes, diagrams of stable spin states on the current–field parameter plane in the in-plane geometry of the initial magnetization are obtained.

  1. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    PubMed

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

  2. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    PubMed

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter. PMID:12857209

  3. Spin-Valve and Spin-Tunneling Devices: Read Heads, MRAMs, Field Sensors

    NASA Astrophysics Data System (ADS)

    Freitas, P. P.

    Hard disk magnetic data storage is increasing at a steady state in terms of units sold, with 144 million drives sold in 1998 (107 million for desktops, 18 million for portables, and 19 million for enterprise drives), corresponding to a total business of 34 billion US [1]. The growing need for storage coming from new PC operating systems, INTERNET applications, and a foreseen explosion of applications connected to consumer electronics (digital TV, video, digital cameras, GPS systems, etc.), keep the magnetics community actively looking for new solutions, concerning media, heads, tribology, and system electronics. Current state of the art disk drives (January 2000), using dual inductive-write, magnetoresistive-read (MR) integrated heads reach areal densities of 15 to 23 bit/μm2, capable of putting a full 20 GB in one platter (a 2 hour film occupies 10 GB). Densities beyond 80 bit/μm2 have already been demonstrated in the laboratory (Fujitsu 87 bit/μm2-Intermag 2000, Hitachi 81 bit/μm2, Read-Rite 78 bit/μ m2, Seagate 70 bit/μ m2 - all the last three demos done in the first 6 months of 2000, with IBM having demonstrated 56 bit/μ m2 already at the end of 1999). At densities near 60 bit/μm2, the linear bit size is sim 43 nm, and the width of the written tracks is sim 0.23 μm. Areal density in commercial drives is increasing steadily at a rate of nearly 100% per year [1], and consumer products above 60 bit/μm2 are expected by 2002. These remarkable achievements are only possible by a stream of technological innovations, in media [2], write heads [3], read heads [4], and system electronics [5]. In this chapter, recent advances on spin valve materials and spin valve sensor architectures, low resistance tunnel junctions and tunnel junction head architectures will be addressed.

  4. Spin-Tunnel Investigation of A 1/40-Scale Model of the F-111A Airplane with Store Loadings and with Supplementary Spin-Recovery Devices

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.; White, William L.

    1974-01-01

    An investigation has been made in the Langley spin tunnel to determine the spin and spin-recovery characteristics of the F-111A airplane in the symmetric and asymmetric stores loading conditions. Tests were also made with the model in the clean condition to determine whether the spin-recovery characteristics could be improved by the use of supplementary devices.

  5. Superfluidity enhanced by spin-flip tunnelling in the presence of a magnetic field

    NASA Astrophysics Data System (ADS)

    Zheng, Jun-Hui; Wang, Daw-Wei; Juzeliūnas, Gediminas

    2016-09-01

    It is well-known that when the magnetic field is stronger than a critical value, the spin imbalance can break the Cooper pairs of electrons and hence hinder the superconductivity in a spin-singlet channel. In a bilayer system of ultra-cold Fermi gases, however, we demonstrate that the critical value of the magnetic field at zero temperature can be significantly increased by including a spin-flip tunnelling, which opens a gap in the spin-triplet channel near the Fermi surface and hence reduces the influence of the effective magnetic field on the superfluidity. The phase transition also changes from first order to second order when the tunnelling exceeds a critical value. Considering a realistic experiment, this mechanism can be implemented by applying an intralayer Raman coupling between the spin states with a phase difference between the two layers.

  6. Superfluidity enhanced by spin-flip tunnelling in the presence of a magnetic field.

    PubMed

    Zheng, Jun-Hui; Wang, Daw-Wei; Juzeliūnas, Gediminas

    2016-01-01

    It is well-known that when the magnetic field is stronger than a critical value, the spin imbalance can break the Cooper pairs of electrons and hence hinder the superconductivity in a spin-singlet channel. In a bilayer system of ultra-cold Fermi gases, however, we demonstrate that the critical value of the magnetic field at zero temperature can be significantly increased by including a spin-flip tunnelling, which opens a gap in the spin-triplet channel near the Fermi surface and hence reduces the influence of the effective magnetic field on the superfluidity. The phase transition also changes from first order to second order when the tunnelling exceeds a critical value. Considering a realistic experiment, this mechanism can be implemented by applying an intralayer Raman coupling between the spin states with a phase difference between the two layers. PMID:27633848

  7. Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode.

    PubMed

    Koga, Takaaki; Nitta, Junsaku; Takayanagi, Hideaki; Datta, Supriyo

    2002-03-25

    We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve. PMID:11909487

  8. Superfluidity enhanced by spin-flip tunnelling in the presence of a magnetic field

    PubMed Central

    Zheng, Jun-Hui; Wang, Daw-Wei; Juzeliūnas, Gediminas

    2016-01-01

    It is well-known that when the magnetic field is stronger than a critical value, the spin imbalance can break the Cooper pairs of electrons and hence hinder the superconductivity in a spin-singlet channel. In a bilayer system of ultra-cold Fermi gases, however, we demonstrate that the critical value of the magnetic field at zero temperature can be significantly increased by including a spin-flip tunnelling, which opens a gap in the spin-triplet channel near the Fermi surface and hence reduces the influence of the effective magnetic field on the superfluidity. The phase transition also changes from first order to second order when the tunnelling exceeds a critical value. Considering a realistic experiment, this mechanism can be implemented by applying an intralayer Raman coupling between the spin states with a phase difference between the two layers. PMID:27633848

  9. Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers.

    PubMed

    van 't Erve, O M J; Friedman, A L; Li, C H; Robinson, J T; Connell, J; Lauhon, L J; Jonker, B T

    2015-06-19

    Spin-based devices offer non-volatile, scalable, low power and reprogrammable functionality for emerging device technologies. Here we fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barriers used to generate spin accumulation and spin currents in a silicon nanowire transport channel. We report the first observation of spin precession via the Hanle effect in both local three-terminal and non-local spin-valve geometries, providing a direct measure of spin lifetimes and confirmation of spin accumulation and pure spin transport. The use of graphene as the tunnel barrier provides a low-resistance area product contact and clean magnetic switching characteristics, because it smoothly bridges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic behaviour. Utilizing intrinsic two-dimensional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers many advantages over conventional materials deposited by vapour deposition, enabling a path to highly scaled electronic and spintronic devices.

  10. Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers.

    PubMed

    van 't Erve, O M J; Friedman, A L; Li, C H; Robinson, J T; Connell, J; Lauhon, L J; Jonker, B T

    2015-01-01

    Spin-based devices offer non-volatile, scalable, low power and reprogrammable functionality for emerging device technologies. Here we fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barriers used to generate spin accumulation and spin currents in a silicon nanowire transport channel. We report the first observation of spin precession via the Hanle effect in both local three-terminal and non-local spin-valve geometries, providing a direct measure of spin lifetimes and confirmation of spin accumulation and pure spin transport. The use of graphene as the tunnel barrier provides a low-resistance area product contact and clean magnetic switching characteristics, because it smoothly bridges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic behaviour. Utilizing intrinsic two-dimensional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers many advantages over conventional materials deposited by vapour deposition, enabling a path to highly scaled electronic and spintronic devices. PMID:26089110

  11. Interplay between resonant tunneling and spin precession oscillations in all-electric all-semiconductor spin transistors

    NASA Astrophysics Data System (ADS)

    Alomar, M. I.; Serra, Llorenç; Sánchez, David

    2016-08-01

    We investigate the transmission properties of a spin transistor coupled to two quantum point contacts acting as a spin injector and detector. In the Fabry-Pérot regime, transport is mediated by quasibound states formed between tunnel barriers. Interestingly, the spin-orbit interaction of the Rashba type can be tuned in such a way that nonuniform spin-orbit fields can point along distinct directions at different points of the sample. We discuss both spin-conserving and spin-flipping transitions as the spin-orbit angle of orientation increases from parallel to antiparallel configurations. Spin precession oscillations are clearly seen as a function of the length of the central channel. Remarkably, we find that these oscillations combine with the Fabry-Pérot motion, giving rise to quasiperiodic transmissions in the purely one-dimensional case. Furthermore, we consider the more realistic case of a finite width in the transverse direction and find that the coherent oscillations become deteriorated for moderate values of the spin-orbit strength. Our results then determine the precise role of the spin-orbit intersubband coupling potential in the Fabry-Pérot-Datta-Das intermixed oscillations.

  12. Tunnelling of spin-orbit coupled Bose-Einstein condensates in driven double-well potential

    NASA Astrophysics Data System (ADS)

    Niu, Zhen-Xia; Zhang, Ai-Xia; Xue, Ju-Kui

    2016-08-01

    The tunnelling dynamics of spin-orbit (SO) coupled Bose-Einstein condensates in a periodically driven double-well potential are investigated both theoretically and numerically. We find that, when the SO coupling is absent, the atomic interactions suppress the tunnelling (as in usual Bose-Einstein condensed system), and the Zeeman field does not influence the usual tunnelling. When the SO coupling is present, the coupling of the atomic interactions and the Zeeman-field intensity can either enhance or suppress the tunnelling. The system undergoes rich transformations from the coherent tunnelling (CT) to the coherent destruction of tunnelling (CDT) when the SO coupling or the atomic interactions or the Zeeman-field intensity changes. In high-frequency region, the triangular structure and the circle structure are revealed in quasi-energy bands of the system, the width of the triangular structure or the circle structure and the localization width are relevant. And the SO coupling modifies traditional degenerate modes of quasi-energy bands. The results provide a possible way to control the usual tunnelling and the spin-flipping tunnelling in double-well potential.

  13. Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing

    SciTech Connect

    Wang, R.; Jiang, X.; Shelby, R.M.; Macfarlane, R.M.; Parkin, S.S.P.; Bank, S.R.; Harris, J.S.

    2005-01-31

    Postgrowth thermal annealing of a CoFe/MgO(100) tunnel spin injector grown on aGaAs/AlGaAs quantum well structure results in a significantly increased spin injection efficiency as inferred from the polarization of heavy-hole electroluminescence from a quantum well optical detector. The as-deposited sample displayed an initial polarization at 100 K of 43%, which was increased to 52% after a 1 h anneal at 300 deg. C, and finally to 55% after a second 1 h anneal at 340 deg. C. The polarization remained unchanged upon further annealing to temperatures as high as 400 deg. C. These results show that tunnel spin injectors based on CoFe/MgO are robust with high thermal stability, making them useful for device applications.

  14. Interfacial spin-filter assisted spin transfer torque effect in Co/BeO/Co magnetic tunnel junction

    SciTech Connect

    Tang, Y.-H. Chu, F.-C.

    2015-03-07

    The first-principles calculation is employed to demonstrate the spin-selective transport properties and the non-collinear spin-transfer torque (STT) effect in the newly proposed Co/BeO/Co magnetic tunnel junction. The subtle spin-polarized charge transfer solely at O/Co interface gives rise to the interfacial spin-filter (ISF) effect, which can be simulated within the tight binding model to verify the general expression of STT. This allows us to predict the asymmetric bias behavior of non-collinear STT directly via the interplay between the first-principles calculated spin current densities in collinear magnetic configurations. We believe that the ISF effect, introduced by the combination between wurtzite-BeO barrier and the fcc-Co electrode, may open a new and promising route in semiconductor-based spintronics applications.

  15. Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

    NASA Astrophysics Data System (ADS)

    Santos, T. S.; Moodera, J. S.; Raman, K. V.; Negusse, E.; Holroyd, J.; Dvorak, J.; Liberati, M.; Idzerda, Y. U.; Arenholz, E.

    2008-10-01

    A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons and is large enough to produce a near-fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller , Phys. Rev. Lett. 86, 3847 (2001)PRLTAO0031-900710.1103/PhysRevLett.86.3847].

  16. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    SciTech Connect

    Dhungana, Kamal B.; Pati, Ranjit

    2014-04-21

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

  17. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

    PubMed

    Burton, J D; Tsymbal, E Y

    2011-04-15

    A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect. PMID:21568608

  18. Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

    SciTech Connect

    Galbiati, Marta; Tatay, Sergio; Delprat, Sophie; Khanh, Hung Le; Deranlot, Cyrile; Collin, Sophie; Seneor, Pierre Mattana, Richard Petroff, Frédéric

    2015-02-23

    Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.

  19. Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

    NASA Astrophysics Data System (ADS)

    Galbiati, Marta; Tatay, Sergio; Delprat, Sophie; Khanh, Hung Le; Servet, Bernard; Deranlot, Cyrile; Collin, Sophie; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric

    2015-02-01

    Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al2O3 or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al2O3/Alq3/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working "organic" and short-circuited junctions fabricated on the same wafer.

  20. Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching

    SciTech Connect

    Schaefers, M.; Drewello, V.; Reiss, G.; Thomas, A.; Thiel, K.; Eilers, G.; Muenzenberg, M.; Schuhmann, H.; Seibt, M.

    2009-12-07

    Magnetic tunnel junctions for spin-transfer torque (STT) switching are prepared to investigate the dielectric breakdown. Intact and broken tunnel junctions are characterized by transport measurements prior to transmission electron microscopy analysis. The comparison to our previous model for thicker MgO tunnel barriers reveals a different breakdown mechanism arising from the high current densities in a STT device: instead of local pinhole formation at a constant rate, massive electromigration and heating leads to displacement of the junction material and voids are appearing. This is determined by element resolved energy dispersive x-ray spectroscopy and three dimensional tomographic reconstruction.

  1. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.

    PubMed

    Park, B G; Wunderlich, J; Martí, X; Holý, V; Kurosaki, Y; Yamada, M; Yamamoto, H; Nishide, A; Hayakawa, J; Takahashi, H; Shick, A B; Jungwirth, T

    2011-05-01

    A spin valve is a microelectronic device in which high- and low-resistance states are realized by using both the charge and spin of carriers. Spin-valve structures used in modern hard-drive read heads and magnetic random access memoriescomprise two ferromagnetic electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunnelling magnetoresistance effect. Here we demonstrate more than 100% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet on one side and a non-magnetic metal on the other side of the tunnel barrier. Ferromagneticmoments in NiFe are reversed by external fields of approximately 50  mT or less, and the exchange-spring effect of NiFe on IrMn induces rotation of antiferromagnetic moments in IrMn, which is detected by the measured tunnelling anisotropic magnetoresistance. Our work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode. The antiferromagnetic tunnelling anisotropic magnetoresistance provides a means to study magnetic characteristics of antiferromagnetic films by an electronic-transport measurement.

  2. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.

    PubMed

    Park, B G; Wunderlich, J; Martí, X; Holý, V; Kurosaki, Y; Yamada, M; Yamamoto, H; Nishide, A; Hayakawa, J; Takahashi, H; Shick, A B; Jungwirth, T

    2011-05-01

    A spin valve is a microelectronic device in which high- and low-resistance states are realized by using both the charge and spin of carriers. Spin-valve structures used in modern hard-drive read heads and magnetic random access memoriescomprise two ferromagnetic electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunnelling magnetoresistance effect. Here we demonstrate more than 100% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet on one side and a non-magnetic metal on the other side of the tunnel barrier. Ferromagneticmoments in NiFe are reversed by external fields of approximately 50  mT or less, and the exchange-spring effect of NiFe on IrMn induces rotation of antiferromagnetic moments in IrMn, which is detected by the measured tunnelling anisotropic magnetoresistance. Our work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode. The antiferromagnetic tunnelling anisotropic magnetoresistance provides a means to study magnetic characteristics of antiferromagnetic films by an electronic-transport measurement. PMID:21399629

  3. Effect of spin exchange interaction on shot noise and tunnel magnetoresistance in double quantum dots

    NASA Astrophysics Data System (ADS)

    Xue, N. T.; Xie, H. Q.; Xue, H. B.; Liang, J.-Q.

    2014-05-01

    By means of the Rate equation approach in sequential tunneling regime, we study spin-polarized transport through series double quantum dots (DQD) weakly coupled to collinear ferromagnetic leads with particular attention on the effect of interdot spin exchange interaction (SEI). For the asymmetric DQD giant negative differential conductance is realized, which depends on the energy-level spacing between two dots. It is demonstrated that the voltage dependencies of the tunnel magnetoresistance (TMR) and the shot noise are sensitive to the SEI, which leads to the additional imbalance between spin-polarized currents. The super-Poissonian statistics is enhanced in the parallel leads’ configuration by the ferromagnetic SEI, which favorites the spin bunching, while it is suppressed by stronger antiferromagnetic SEI in antiparallel configuration for a symmetric DQD. The voltage dependencies of the TMR and shot noise may be used to probe the SEI.

  4. Spin-Tunnel Investigation of a 1/28-Scale Model of a Subsonic Attack Airplane

    NASA Technical Reports Server (NTRS)

    Lee, Henry A.; Healy, Frederick M.

    1964-01-01

    An investigation has been made of a 1/28-scale model of the Grumman A-6A airplane in the Langley spin tunnel. The erect spin and recovery characteristics of the model were determined for the flight design gross weight loading and for a loading with full internal fuel and empty external wing fuel tanks. The effects of extending slats and deflecting flaps were investigated. Inverted-spin and recovery characteristics of the model were determined for the flight design gross weight loading. The size of the spin-recovery tail parachute necessary to insure satisfactory spin-recovery was determined, and the effect of firing wing-mounded rockets during spins was investigated.

  5. Low-resistance spin injection into silicon using graphene tunnel barriers.

    PubMed

    van 't Erve, O M J; Friedman, A L; Cobas, E; Li, C H; Robinson, J T; Jonker, B T

    2012-11-01

    Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore's law. Ferromagnetic metals are ideal contacts for spin injection and detection, but the intervening tunnel barrier required to accommodate the large difference in conductivity introduces defects, trapped charge and material interdiffusion, which severely compromise performance. Here, we show that single-layer graphene successfully circumvents the classic issue of conductivity mismatch between a metal and a semiconductor for electrical spin injection and detection, providing a highly uniform, chemically inert and thermally robust tunnel barrier. We demonstrate electrical generation and detection of spin accumulation in silicon above room temperature, and show that the contact resistance-area products are two to three orders of magnitude lower than those achieved with oxide tunnel barriers on silicon substrates with identical doping levels. Our results identify a new route to low resistance-area product spin-polarized contacts, a key requirement for semiconductor spintronic devices that rely on two-terminal magnetoresistance, including spin-based transistors, logic and memory.

  6. Spin and charge thermopower of resonant tunneling diodes

    SciTech Connect

    Nicolau, Javier H.; Sánchez, David

    2014-03-17

    We investigate thermoelectric effects in quantum well systems. Using the scattering approach for coherent conductors, we calculate the thermocurrent and thermopower both in the spin-degenerate case and in the presence of giant Zeeman splitting due to magnetic interactions in the quantum well. We find that the thermoelectric current at linear response is maximal when the well level is aligned with the Fermi energy and is robust against thermal variations. Furthermore, our results show a spin voltage generation in response to the applied thermal bias, giving rise to large spin Seebeck effects tunable with external magnetic fields, quantum well tailoring, and background temperature.

  7. Controlled tunneling-induced dephasing of Rabi rotations for high-fidelity hole spin initialization

    NASA Astrophysics Data System (ADS)

    Ardelt, P.-L.; Simmet, T.; Müller, K.; Dory, C.; Fischer, K. A.; Bechtold, A.; Kleinkauf, A.; Riedl, H.; Finley, J. J.

    2015-09-01

    We report the subpicosecond initialization of a single heavy hole spin in a self-assembled quantum dot with >98.5 % fidelity and without external magnetic field. Using an optically addressable charge and spin storage device we tailor the relative electron and hole tunneling escape time scales from the dot and simultaneously achieve high-fidelity initialization, long hole storage times, and high-efficiency readout via a photocurrent signal. We measure electric-field-dependent Rabi oscillations of the neutral and charged exciton transitions in the ultrafast tunneling regime and demonstrate that tunneling-induced dephasing (TID) of excitonic Rabi rotations is the major source for the intensity damping of Rabi oscillations in the low Rabi frequency, low temperature regime. Our results are in very good quantitative agreement with quantum-optical simulations revealing that TID can be used to precisely measure tunneling escape times and extract changes in the Coulomb binding energies for different charge configurations of the quantum dot. Finally, we demonstrate that for subpicosecond electron tunneling escape, TID of a coherently driven exciton transition facilitates ultrafast hole spin initialization with near-unity fidelity.

  8. Absence of a spin-signature from a single Ho adatom as probed by spin-sensitive tunneling

    PubMed Central

    Steinbrecher, M.; Sonntag, A.; Dias, M. dos Santos; Bouhassoune, M.; Lounis, S.; Wiebe, J.; Wiesendanger, R.; Khajetoorians, A. A.

    2016-01-01

    Whether rare-earth materials can be used as single-atom magnetic memory is an ongoing debate in recent literature. Here we show, by inelastic and spin-resolved scanning tunnelling-based methods, that we observe a strong magnetic signal and excitation from Fe atoms adsorbed on Pt(111), but see no signatures of magnetic excitation or spin-based telegraph noise for Ho atoms. Moreover, we observe that the indirect exchange field produced by a single Ho atom is negligible, as sensed by nearby Fe atoms. We demonstrate, using ab initio methods, that this stems from a comparatively weak coupling of the Ho 4f electrons with both tunnelling electrons and substrate-derived itinerant electrons, making both magnetic coupling and detection very difficult when compared to 3d elements. We discuss these results in the context of ongoing disputes and clarify important controversies. PMID:26838811

  9. Absence of a spin-signature from a single Ho adatom as probed by spin-sensitive tunneling.

    PubMed

    Steinbrecher, M; Sonntag, A; dos Santos Dias, M; Bouhassoune, M; Lounis, S; Wiebe, J; Wiesendanger, R; Khajetoorians, A A

    2016-01-01

    Whether rare-earth materials can be used as single-atom magnetic memory is an ongoing debate in recent literature. Here we show, by inelastic and spin-resolved scanning tunnelling-based methods, that we observe a strong magnetic signal and excitation from Fe atoms adsorbed on Pt(111), but see no signatures of magnetic excitation or spin-based telegraph noise for Ho atoms. Moreover, we observe that the indirect exchange field produced by a single Ho atom is negligible, as sensed by nearby Fe atoms. We demonstrate, using ab initio methods, that this stems from a comparatively weak coupling of the Ho 4f electrons with both tunnelling electrons and substrate-derived itinerant electrons, making both magnetic coupling and detection very difficult when compared to 3d elements. We discuss these results in the context of ongoing disputes and clarify important controversies. PMID:26838811

  10. Absence of a spin-signature from a single Ho adatom as probed by spin-sensitive tunneling

    NASA Astrophysics Data System (ADS)

    Steinbrecher, M.; Sonntag, A.; Dias, M. Dos Santos; Bouhassoune, M.; Lounis, S.; Wiebe, J.; Wiesendanger, R.; Khajetoorians, A. A.

    2016-02-01

    Whether rare-earth materials can be used as single-atom magnetic memory is an ongoing debate in recent literature. Here we show, by inelastic and spin-resolved scanning tunnelling-based methods, that we observe a strong magnetic signal and excitation from Fe atoms adsorbed on Pt(111), but see no signatures of magnetic excitation or spin-based telegraph noise for Ho atoms. Moreover, we observe that the indirect exchange field produced by a single Ho atom is negligible, as sensed by nearby Fe atoms. We demonstrate, using ab initio methods, that this stems from a comparatively weak coupling of the Ho 4f electrons with both tunnelling electrons and substrate-derived itinerant electrons, making both magnetic coupling and detection very difficult when compared to 3d elements. We discuss these results in the context of ongoing disputes and clarify important controversies.

  11. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    SciTech Connect

    Ganesh Saripalli

    2002-12-31

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  12. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

    PubMed Central

    Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X.-G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; Jiang, J.; Wei, H. X.; Han, X. F.

    2014-01-01

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices. PMID:25451163

  13. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

    DOE PAGES

    Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X. -G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; et al

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1more » spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.« less

  14. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

    SciTech Connect

    Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X. -G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; Jiang, J.; Wei, H. X.; Han, X. F.

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

  15. Spin-wave thermal population as temperature probe in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Le Goff, A.; Nikitin, V.; Devolder, T.

    2016-07-01

    We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm2 nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

  16. Laser-assisted spin-polarized transport in graphene tunnel junctions.

    PubMed

    Ding, Kai-He; Zhu, Zhen-Gang; Berakdar, Jamal

    2012-07-01

    The Keldysh nonequilibrium Green's function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. PMID:22677935

  17. Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

    SciTech Connect

    Chen, C. H.; Cheng, Y. H.; Ko, C. W.; Hsueh, W. J.

    2015-10-12

    This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed to the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.

  18. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

    PubMed

    Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

    2011-01-01

    Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers: PMID:21711779

  19. Spin dependent transport in diluted magnetic semiconductor/superconductor tunnel junctions

    NASA Astrophysics Data System (ADS)

    Shokri, A. A.; Negarestani, S.

    2014-12-01

    A modification of Blonder-Tinkham-Klapwijk (BTK) model is proposed to describe transport properties of diluted magnetic semiconductor (DMS)/superconductor(SC)/DMS double tunneling junctions. Coherent spin-polarized transport is studied by taking into account the Andreev reflection on spatial variation of SC barrier parameters in the heterostructure. It is shown that the conductance spectrum exhibits an oscillatory behavior with quasi-particle energy, and the oscillation amplitude is reduced with increasing temperature. We also examine the dependence of tunneling magnetoresistance (TMR) on the barrier strength (κ) and spin polarization (P) of two DMS layers. Our results show that TMR decreases with increasing temperature and barrier strength, which may be useful in designing the nano spin-valve devices based on DMS and SC materials.

  20. Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

    NASA Astrophysics Data System (ADS)

    Liu, Fen; Yang, Yihang; Xue, Qian; Gao, Zhiwei; Chen, Aixi; Miao, Guo-Xing

    2016-08-01

    Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.

  1. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    SciTech Connect

    Clément, P.-Y.; Baraduc, C. Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

    2015-09-07

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  2. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

    2015-09-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  3. Controlling electronic access to the spin excitations of a single molecule in a tunnel junction

    NASA Astrophysics Data System (ADS)

    Hirjibehedin, Cyrus F.; Warner, Ben; El Hallak, Fadi; Prueser, Henning; Ajibade, Afolabi; Gill, Tobias G.; Fisher, Andrew J.; Persson, Mats

    Spintronic phenomena can be utilized to create new devices with applications in data storage and sensing. Scaling these down to the single molecule level requires controlling the properties of the current-carrying orbitals to enable access to spin states through phenomena such as inelastic electron tunneling. Here we show that the spintronic properties of a tunnel junction containing a single molecule can be controlled by their coupling to the local environment. For tunneling through iron phthalocyanine (FePc) on an insulating copper nitride (Cu2N) monolayer above Cu(001), we find that spin transitions may be strongly excited depending on the binding site of the central Fe atom. Different interactions between the Fe and the underlying Cu or N atoms shift the Fe d-orbitals with respect to the Fermi energy, and control the relative strength of the spin excitations, an effect that can described in a simple co-tunneling model. This work demonstrates the importance of the atomic-scale environment in the development of single molecule spintronic devices.

  4. Resonant spin tunneling in randomly oriented nanospheres of Mn12 acetate

    DOE PAGES

    Lendínez, S.; Zarzuela, R.; Tejada, J.; Terban, M. W.; Billinge, S. J. L.; Espin, J.; Imaz, I.; Maspoch, D.; Chudnovsky, E. M.

    2015-01-06

    We report measurements and theoretical analysis of resonant spin tunneling in randomly oriented nanospheres of a molecular magnet. Amorphous nanospheres of Mn₁₂ acetate have been fabricated and characterized by chemical, infrared, TEM, X-ray, and magnetic methods. Magnetic measurements have revealed sharp tunneling peaks in the field derivative of the magnetization that occur at the typical resonant field values for the Mn₁₂ acetate crystal in the field parallel to the easy axis.Theoretical analysis is provided that explains these observations. We argue that resonant spin tunneling in a molecular magnet can be established in a powder sample, without the need for amore » single crystal and without aligning the easy magnetization axes of the molecules. This is confirmed by re-analyzing the old data on a powdered sample of non-oriented micron-size crystals of Mn₁₂ acetate. In conclusion, our findings can greatly simplify the selection of candidates for quantum spin tunneling among newly synthesized molecular magnets.« less

  5. Spin-1 atoms in optical superlattices: Single-atom tunneling and entanglement

    SciTech Connect

    Wagner, Andreas; Bruder, Christoph; Demler, Eugene

    2011-12-15

    We examine spinor Bose-Einstein condensates in optical superlattices theoretically using a Bose-Hubbard Hamiltonian that takes spin effects into account. Assuming that a small number of spin-1 bosons is loaded in an optical potential, we study single-particle tunneling that occurs when one lattice site is ramped up relative to a neighboring site. Spin-dependent effects modify the tunneling events in a qualitative and quantitative way. Depending on the asymmetry of the double well, different types of magnetic order occur, making the system of spin-1 bosons in an optical superlattice a model for mesoscopic magnetism. We use a double-well potential as a unit cell for a one-dimensional superlattice. Homogeneous and inhomogeneous magnetic fields are applied, and the effects of the linear and the quadratic Zeeman shifts are examined. We also investigate the bipartite entanglement between the sites and construct states of maximal entanglement. The entanglement in our system is due to both orbital and spin degrees of freedom. We calculate the contribution of orbital and spin entanglements and show that the sum of these two terms gives a lower bound for the total entanglement.

  6. Macroscopic Measurement of Resonant Magnetization Tunneling in High-Spin Molecules

    NASA Astrophysics Data System (ADS)

    Friedman, Jonathan R.; Sarachik, M. P.; Tejada, J.; Ziolo, R.

    1996-05-01

    We report the observation of steps at regular intervals of magnetic field in the hysteresis loop of a macroscopic sample of oriented Mn12O12(CH3COO)16(H2O)4 crystals. The magnetic relaxation rate increases substantially when the field is tuned to a step. We propose that these effects are manifestations of thermally assisted, field-tuned resonant tunneling between quantum spin states, and attribute the observation of quantum-mechanical phenomena on a macroscopic scale to tunneling in a large (Avogadro's) number of magnetically identical molecules.

  7. Spin-flip induction of Fano resonance upon electron tunneling through atomic-scale spin structures

    SciTech Connect

    Val'kov, V. V. Aksenov, S. V.; Ulanov, E. A.

    2013-05-15

    The inclusion of inelastic spin-dependent electron scatterings by the potential profiles of a single magnetic impurity and a spin dimer is shown to induce resonance features due to the Fano effect in the transport characteristics of such atomic-scale spin structures. The spin-flip processes leading to a configuration interaction of the system's states play a fundamental role for the realization of Fano resonance and antiresonance. It has been established that applying an external magnetic field and a gate electric field allows the conductive properties of spin structures to be changed radically through the Fano resonance mechanism.

  8. Spontaneous anomalous and spin Hall effects due to spin-orbit scattering of evanescent wave functions in magnetic tunnel junctions.

    PubMed

    Vedyayev, A; Ryzhanova, N; Strelkov, N; Dieny, B

    2013-06-14

    We theoretically investigated the anomalous Hall effect (AHE) and spin Hall effect (SHE) transversal to the insulating spacer I, in magnetic tunnel junctions of the form F/I/F where the F's are ferromagnetic layers and I represents a tunnel barrier. We considered the case of purely ballistic (quantum mechanical) transport. These effects arise because of the asymmetric scattering of evanescent wave functions due to the spin-orbit interaction in the tunnel barrier. The AHE and SHE we investigated have a surface nature due to the proximity effect. Their amplitude is of first order in the scattering potential. This contrasts with ferromagnetic metals wherein these effects are of second (side-jump scattering) and third (skew scattering) order in these potentials. The value of the AHE current in the insulating spacer may be much larger than that in metallic ferromagnetic electrodes. For the antiparallel orientation of the magnetizations in the two F electrodes, a spontaneous Hall current exists even at zero applied voltage. PMID:25165958

  9. Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

    NASA Astrophysics Data System (ADS)

    Liu, H.; Bedau, D.; Backes, D.; Katine, J. A.; Langer, J.; Kent, A. D.

    2010-12-01

    Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.

  10. Ultrafast Switching in Magnetic Tunnel Junction based Orthogonal Spin Transfer Devices

    NASA Astrophysics Data System (ADS)

    Liu, Huanlong; Bedau, Daniel; Backes, Dirk; Katine, Jordan; Langer, Jürgen; Kent, Andrew; New York University, New York, NY 10003 USA Team; Hitachi-GST, San Jose, California 95135 USA Team; Singulus, 63796 Kahl am Main, Germany Team

    2011-03-01

    Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized polarizer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. A switching probability of 100% is observed for 500 ps pulses, requiring an energy of 250 fJ. The fast switching process indicates there is no incubation delay of several nanoseconds as observed in conventional collinear magnetized devices. Due to the perpendicular polarizer switching is possible for both pulse polarities. There is also evidence for precessional switching in the non-monotonic dependence of the switching probability versus pulse amplitude. This work was supported by Spin Transfer Technologies.

  11. Tunneling properties of Bogoliubov mode and spin-wave modes in supercurrent states of a spin-1 ferromagnetic spinor Bose-Einstein condensate

    SciTech Connect

    Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

    2011-03-15

    We investigate the tunneling properties of collective excitations in the ferromagnetic phase of a spin-1 spinor Bose-Einstein condensate (BEC). In addition to the Bogoliubov mode, this superfluid phase has two spin excitations, namely, the gapless transverse spin wave and the quadrupolar mode with a finite excitation gap. In the mean-field theory at T=0, we examine how these collective modes tunnel through a barrier potential that couples to the local density of particles. In the presence of supercurrent with a finite momentum q, while the Bogoliubov mode shows the so-called anomalous tunneling behavior (which is characterized by perfect transmission) in the low-energy limit, the transverse spin wave transmits perfectly only when the momentum k of this mode coincides with {+-}q. At k={+-}q, the wave function of this spin wave has the same form as the condensate wave function in the current-carrying state, so that the mechanism of this perfect transmission is found to be the same as tunneling of the supercurrent. Using this fact, the perfect transmission of the spin wave is proved for a generic barrier potential. We show that such perfect transmission does not occur in the quadrupolar mode. Further, we consider the effects of potentials breaking U(1) and spin-rotation symmetries on the transmission properties of excitations. Our results would be useful for understanding excitation properties of spinor BEC's, as well as the anomalous tunneling phenomenon in Bose superfluids.

  12. Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts

    SciTech Connect

    Majumder, Sarmita; Hohertz, Donna; McNeil, James; Kavanagh, Karen L.; SpringThorpe, Anthony

    2014-03-28

    We report spin transport in electrodeposited Fe/n-GaAs tunnel diodes via three-terminal Hanle measurements. For temperatures between 20 K and 150 K, the spin resistance was up to 20 times higher than expected from theoretical calculations and 1000 times larger compared to a vacuum-deposited counterpart. This higher spin resistance was correlated with a higher contact resistance, and a higher concentration of oxygen impurities in the electrodeposited Fe film and interface, as detected via x-ray photoelectron and Auger spectroscopies, and inferred from Fe film nucleation rates. These results can be explained via a small effective tunnel-contact area of 5%, but extra spin filtering via interfacial states or magnetic oxide layers cannot be ruled out. The spin diffusion times (8.5 ± 0.4 ns to 1.8 ± 0.4 ns, for 20 K to 150 K) extracted from Lorentzian fits were in good agreement with values obtained from earlier 4-terminal Hanle measurements (7.8 ± 0.4 ns to 3.2 ± 0.4 ns, for 25 K to 77 K), both 10 times slower than reported vacuum-deposited contacts.

  13. Magnetoresistance in antiferromagnet-based spin tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jungwirth, Tomas

    2012-02-01

    To date spintronics research and applications of magnetically ordered systems have focused on ferromagnets (FMs). There are, however, fundamental physical limitations for FM materials which may make them impractical to realize the full potential of spintronics. Metal FMs offer high temperature operation but the large magnetic stray fields make them unfavorable for high-density integration and metals are unsuitable for transistor and information processing applications. FM semiconductors on the other hand do not allow for high-temperature operation. We present a concept in which these limitations are circumvented in spintronics based on antiferromagnets. The concept is based on relativistic magnetic and magneto-transport anisotropy effects in nanodevices whose common characteristics is that they are an even function of the microscopic magnetic moment vector, i.e., can be equally strong in AFMs as in FMs. As a demonstration we present our experimental observation of >100% tunneling anisotropic magnetoresistance in a device with an IrMn AFM tunnel electrode [1]. We will also discuss candidate materials for high-temperature AFM semiconductor spintronics [2].[4pt] [1] B. G. Park, J.Wunderlich, X.Marti, V.Holy, Y.Kurosaki, M.Yamada, H.Yamamoto, A.Nishide, J.Hayakawa, H.Takahashi, A.B.Shick, T.Jungwirth, Nature Mat. 10, 347 (2011). [0pt] [2] T.Jungwirth, V.Nov'ak, X.Marti, M.Cukr, F.M'aca, A.B. Shick, J.Masek, P.Horodysk'a, P.Nemec, V.Hol'y, et al., Phys. Rev. B 83, 035321 (2011).

  14. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

    SciTech Connect

    Tomasello, R.; Carpentieri, M.; Finocchio, G.

    2013-12-16

    This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

  15. Spin-dependent tunneling properties in GaMnAs-based magnetic tunnel transistors

    NASA Astrophysics Data System (ADS)

    Mizuno, Yosuke; Ohya, Shinobu; Hai, Pham Nam; Tanaka, Masaaki

    2007-03-01

    III-V-based ferromagnetic-semiconductor heterostructures comprising GaMnAs are hopeful candidates for future spintronic devices. Thus far, only two-terminal devices have mainly been studied. Meanwhile, GaMnAs-based `three-terminal' magnetic tunnel transistors (MTTs) have a potential to add novel functions to integrated circuits. We prepared MTT structures composed of GaMnAs (30 nm)/ AlAs (2 nm)/ GaMnAs (30 nm)/ GaAs:Be (30 nm; 1*10^17cm-3) on p-GaAs(001) substrates using molecular-beam epitaxy (MBE). The VEB dependence of IC, IE, and IB shows that the current transfer ratio α (= IC / IE) is 0.8-0.95; this is much higher than 0.03, the maximum value reported in metal-based MTTs. The current gain β (= IC / IB) is of the order of 10, which means that GaMnAs-based MTTs have current amplifiability. The VEC dependence of the tunneling magnetoresistance (TMR) ratio differed significantly from that observed in single-barrier magnetic tunnel junctions (MTJs). This work was partly supported by PRESTO / SORST of JST, Grant-in-Aids for Scientific Research, IT-RR2002 of MEXT, and Kurata-Memorial Hitachi Sci. & Tech. Foundation.

  16. Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance.

    PubMed

    Klewe, Christoph; Meinert, Markus; Schmalhorst, Jan; Reiss, Günter

    2013-02-20

    The ferrimagnetic Heusler compound Mn(2)VGa is predicted to have a pseudogap in the majority spin channel, which should lead to a negative tunnel magnetoresistance (TMR). We synthesized epitaxial Mn(2)VGa thin films on MgO(001) substrates by dc and rf magnetron co-sputtering, resulting in nearly stoichiometric films. XRD analysis revealed a mostly B2 ordered structure for the films deposited at substrate temperatures of 350, 450, and 550 °C. Magnetic tunnel junctions with MgO barriers and CoFe counter-electrodes were fabricated. After post-annealing at up to T(a) = 425 °C negative TMR was obtained around zero bias, providing evidence for inverted spin polarization. The band structures of both electrodes were computed within the coherent potential approximation and used to calculate the TMR(V) characteristics, which were in good agreement with our experimental findings.

  17. Macroscopic Measurement of Resonant Magnetization Tunneling in High-Spin Molecules

    NASA Astrophysics Data System (ADS)

    Friedman, Jonathan R.; Sarachik, M. P.; Tejada, J.; Maciejewski, J.; Ziolo, R.

    1996-03-01

    We report the observation of steps in the hysteresis loop of a macroscopic sample of oriented crystals of Mn_12O_12(CH_3COO)_16(H_2O)_4, a high-spin (S=10) molecule. The steps occur at regular intervals of magnetic field, every 0.46 T. The magnetic relaxation rate increases substantially when the field is tuned to a step. We interpret these effects as manifestations of thermally assisted, field-tuned resonant tunneling between quantum spin states. A simple model is presented that accounts for the observations and yields good quantitative agreement with measured values of the anisotropy barrier. We attribute the observation of quantum-mechanical phenomena on a macroscopic scale to tunneling in a large (Avogadro's) number of magnetically identical molecules.

  18. Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

    SciTech Connect

    Xu, Lei; Ma, Zhongshui; Wei, Dan

    2015-01-14

    The switching processes of elliptically shaped magnetic tunnel junction bits with the structure Ta/CoFeB/MgO/CoFeB have been studied by the micromagnetic models. By comparing the tunneling magneto-resistance minor and major loops calculated by our model with related experimental results, we found that the inter-layer exchange coupling between the two CoFeB layers and a reduced saturation magnetization M{sub s} distribution at the edge of the elliptical bit should be included. The chosen strength of the inter-layer exchange coupling also matches well with experimental observations. The current induced magnetization switching is generated from the spin Hall effect in the Ta layer. The critical switching currents calculated by our model are coincident with experiment. This shows the reliability of our micromagnetic model with the spin orbital torque term.

  19. Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance.

    PubMed

    Klewe, Christoph; Meinert, Markus; Schmalhorst, Jan; Reiss, Günter

    2013-02-20

    The ferrimagnetic Heusler compound Mn(2)VGa is predicted to have a pseudogap in the majority spin channel, which should lead to a negative tunnel magnetoresistance (TMR). We synthesized epitaxial Mn(2)VGa thin films on MgO(001) substrates by dc and rf magnetron co-sputtering, resulting in nearly stoichiometric films. XRD analysis revealed a mostly B2 ordered structure for the films deposited at substrate temperatures of 350, 450, and 550 °C. Magnetic tunnel junctions with MgO barriers and CoFe counter-electrodes were fabricated. After post-annealing at up to T(a) = 425 °C negative TMR was obtained around zero bias, providing evidence for inverted spin polarization. The band structures of both electrodes were computed within the coherent potential approximation and used to calculate the TMR(V) characteristics, which were in good agreement with our experimental findings. PMID:23327939

  20. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    NASA Astrophysics Data System (ADS)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Fuhrmann, Bodo; Schmidt, Georg

    2016-04-01

    Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  1. Observation of spin-dependent quantum well resonant tunneling in textured CoFeB layers

    SciTech Connect

    Teixeira, J. M. Costa, J. D.; Ventura, J.; Sousa, J. B.; Wisniowski, P.; Freitas, P. P.

    2014-03-17

    We report the observation of spin-dependent quantum well (QW) resonant tunneling in textured CoFeB free layers of single MgO magnetic tunnel junctions (MTJs). The inelastic electron tunneling spectroscopy spectra clearly show the presence of resonant oscillations in the parallel configuration, which are related with the appearance of majority-spin Δ{sub 1} QW states in the CoFeB free layer. To gain a quantitative understanding, we calculated QW state positions in the voltage-thickness plane using the so-called phase accumulation model (PAM) and compared the PAM solutions with the experimental resonant voltages observed for a set of MTJs with different CoFeB free layer thicknesses (t{sub fl} = 1.55, 1.65, 1.95, and 3.0 nm). An overall good agreement between experiment and theory was obtained. An enhancement of the tunnel magnetoresistance with bias is observed in a bias voltage region corresponding to the resonant oscillations.

  2. Spin Dynamics and Quantum Tunneling in Fe8 Nanomagnet and in AFM Rings by NMR

    SciTech Connect

    Seung-Ho-Baek

    2004-12-19

    In this thesis, our main interest has been to investigate the spin dynamics and quantum tunneling in single molecule magnets (SMMs), For this we have selected two different classes of SMMs: a ferrimagnetic total high spin S = 10 cluster Fe8 and antiferromagnetic (AFM) ring-type clusters. For Fe8, our efforts have been devoted to the investigation of the quantum tunneling of magnetization in the very low temperature region. The most remarkable experimental finding in Fe8 is that the nuclear spin-lattice relaxation rate (1/T{sub l}) at low temperatures takes place via strong collision mechanism, and thus it allows to measure directly the tunneling rate vs T and H for the first time. For AFM rings, we have shown that 1/T{sub l} probes the thermal fluctuations of the magnetization in the intermediate temperature range. We find that the fluctuations are dominated by a single characteristic frequency which has a power law T-dependence indicative of fluctuations due to electron-acoustic phonon interactions.

  3. CoFe alloy as middle layer for strong spin dependent quantum well resonant tunneling in double barrier magnetic tunnel junctions

    SciTech Connect

    Liu, R. S.; Yang, See-Hun; Jiang, Xin; Zhang, Xiaoguang; Rice, Philip M.; Canali, Carlo M.; Parkin, S. S. P.

    2013-01-01

    We report the spin-dependent quantum well resonant tunneling effect in CoFe/MgO/CoFe/MgO/CoFeB (CoFe) double barrier magnetic tunnel junctions. The dI/dV spectra reveal clear resonant peaks for the parallel magnetization configurations, which can be matched to quantum well resonances obtained from calculation. The differential TMR exhibits an oscillatory behavior with a sign change due to the formation of the spin-dependent QW states in the middle CoFe layer. Also, we observe pronounced TMR enhancement at resonant voltages at room temperature, suggesting that it is very promising to achieve high TMR using the spin-dependent QW resonant tunneling effect.

  4. Resonant tunneling between two-dimensional layers accounting for spin-orbit interaction

    NASA Astrophysics Data System (ADS)

    Rozhansky, I. V.; Averkiev, N. S.; Lähderanta, E.

    2016-05-01

    We present a theory of quantum tunneling between two-dimensional (2D) layers with Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Accounting for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. The resonant features strongly depend on the SOI parameters; for clear experimental observation the SOI characteristic energy should exceed the resonant broadening related to the particles' quantum lifetime in the layers. It appears that the experiments on hole tunneling are favorable to meet this criterion. We also consider a promising candidate for observing the effect, that is, p -doped SiGe strained heterostructures. As supported by our calculations, small adjustments of the parameters for experimentally studied AlGaAs/GaAs p -type quantum walls or designing a 2D-2D tunneling experiment for recently fabricated SiGe structures are very likely to reveal the SOI features in the 2D-2D tunneling.

  5. Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic C o2MnSi electrodes

    NASA Astrophysics Data System (ADS)

    Hu, Bing; Moges, Kidist; Honda, Yusuke; Liu, Hong-xi; Uemura, Tetsuya; Yamamoto, Masafumi; Inoue, Jun-ichiro; Shirai, Masafumi

    2016-09-01

    In order to elucidate the origin of the temperature (T ) dependence of spin-dependent tunneling conductance (G ) of magnetic tunnel junctions (MTJs), we experimentally investigated the T dependence of G for the parallel and antiparallel magnetization alignments, GP and GAP, of high-quality C o2MnSi (CMS)/MgO/CMS MTJs having systematically varied spin polarizations (P ) at 4.2 K by varying the Mn composition α in C o2M nαSi electrodes that exhibited giant tunneling magnetoresistance ratios. Results showed that GP normalized by its value at 4.2 K exhibited a notable, nonmonotonic T dependence although its variation with T was significantly smaller than that of GAP normalized by its value at 4.2 K, indicating that an analysis of the experimental GP(T ) is critical to revealing the origin of the T dependence of G . By analyzing the experimental GP(T ) , we clarified that both spin-flip inelastic tunneling via a thermally excited magnon and spin-conserving elastic tunneling in which P decays with increasing T play key roles. The experimental GAP(T ) , including its stronger T dependence for higher P at 4.2 K, was also consistently explained with this model. Our findings provide a unified picture for understanding the origin of the T dependence of G of MTJs with a wide range of P , including MTJs with high P close to a half-metallic value.

  6. In situ scanning tunneling microscope tip treatment device for spin polarization imaging

    SciTech Connect

    Li, An-Ping; Jianxing, Ma; Shen, Jian

    2008-04-22

    A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

  7. Effect of spin fluctuations on tunneling conductance in diffusive normal metal/conventional superconductor junctions

    NASA Astrophysics Data System (ADS)

    Shigeta, I.; Yokoyama, T.; Asano, Y.; Hiroi, M.; Tanaka, Y.

    2009-03-01

    Transport property in diffusive normal metal/conventional superconductor (DN/CS) junctions is studied for the effect of spin fluctuations under various situations by solving the Usadel equation with Nazarov's generalized boundary condition. Tunneling conductance of the DN/CS junctions is calculated by changing the magnitude of the resistance in DN, Thouless energy in DN, and the transparency of the insulating barrier, together with the magnitude of spin fluctuations. A zero-bias conductance dip (ZBCD) and a zero-bias conductance peak (ZBCP) with the width given by Thouless energy occur in line shapes by way of a coherent Andreev reflection (CAR) around zero energy in the system of DN/CS junctions. We have found that both of the ZBCD and the ZBCP sharpen with increasing the magnitude of spin fluctuations in the region of the relatively large resistance in DN.

  8. Photon assisted tunneling through three quantum dots with spin-orbit-coupling

    SciTech Connect

    Tang, Han-Zhao; An, Xing-Tao; Wang, Ai-Kun; Liu, Jian-Jun

    2014-08-14

    The effect of an ac electric field on quantum transport properties in a system of three quantum dots, two of which are connected in parallel, while the third is coupled to one of the other two, is investigated theoretically. Based on the Keldysh nonequilibrium Green's function method, the spin-dependent current, occupation number, and spin accumulation can be obtained in our model. An external magnetic flux, Rashba spin-orbit-coupling (SOC), and intradot Coulomb interactions are considered. The magnitude of the spin-dependent average current and the positions of the photon assisted tunneling (PAT) peaks can be accurately controlled and manipulated by simply varying the strength of the coupling and the frequency of the ac field. A particularly interesting result is the observation of a new kind of PAT peak and a multiple-PAT effect that can be generated and controlled by the coupling between the quantum dots. In addition, the spin occupation number and spin accumulation can be well controlled by the Rashba SOC and the magnetic flux.

  9. Structural defects analysis versus spin polarized tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

    NASA Astrophysics Data System (ADS)

    Gabor, M. S.; Tiusan, C.; Petrisor, T.; Petrisor, T.; Hehn, M.; Lu, Y.; Snoeck, E.

    2013-12-01

    We report on spin polarization reduction by incoherent tunneling in single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). A large density of misfit dislocations in the Heusler based MTJs has been provided by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence in the real space has been investigated by High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman-Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Δ1 states across the (001) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature.

  10. A theoretical analysis of the spin dynamics of magnetic adatoms traced by time-resolved scanning tunneling spectroscopy

    NASA Astrophysics Data System (ADS)

    Schüler, M.; Pavlyukh, Y.; Berakdar, J.

    2012-04-01

    Inelastic scanning tunneling microscopy (STM) has recently been shown (Loth et al 2010 Science 329 1628) to be extendable to access the nanosecond, spin-resolved dynamics of magnetic adatoms and molecules. Here we analyze this novel tool theoretically by considering the time-resolved spin dynamics of a single adsorbed Fe atom excited by a tunneling current pulse from a spin-polarized STM tip. The adatom spin configuration can be controlled and probed by applying voltage pulses between the substrate and the spin-polarized STM tip. We demonstrate how, in a pump-probe manner, the relaxation dynamics of the sample spin is manifested in the spin-dependent tunneling current. Our model calculations are based on the scattering theory in a wave-packet formulation. The scheme is non-perturbative and, hence, is valid for all voltages. The numerical results for the tunneling probability and the conductance are contrasted with the predictions of simple analytical models and compared with experiments.

  11. Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Zhang, X.-G.; Han, X. F.

    2016-04-01

    We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1-x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

  12. Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Zhang, X.-G.; Han, X. F.

    2016-04-01

    We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1‑x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

  13. Reprint of : Majorana fermion fingerprints in spin-polarised scanning tunnelling microscopy

    NASA Astrophysics Data System (ADS)

    Kotetes, Panagiotis; Mendler, Daniel; Heimes, Andreas; Schön, Gerd

    2016-08-01

    We calculate the spatially resolved tunnelling conductance of topological superconductors (TSCs) based on ferromagnetic chains, measured by means of spin-polarised scanning tunnelling microscopy (SPSTM). Our analysis reveals novel signatures of MFs arising from the interplay of their strongly anisotropic spin-polarisation and the magnetisation content of the tip. We focus on the deep Yu-Shiba-Rusinov (YSR) limit where only YSR bound states localised in the vicinity of the adatoms govern the low-energy as also the topological properties of the system. Under these conditions, we investigate the occurrence of zero/finite bias peaks (ZBPs/FBPs) for a single or two coupled TSC chains forming a Josephson junction. Each TSC can host up to two Majorana fermions (MFs) per edge if chiral symmetry is preserved. Here we retrieve the conductance for all the accessible configurations of the MF number of each chain. Our results illustrate innovative spin-polarisation-sensitive experimental routes for arresting the MFs by either restoring or splitting the ZBP in a predictable fashion via: (i) weakly breaking chiral symmetry, e.g. by the SPSTM tip itself or by an external Zeeman field and (ii) tuning the superconducting phase difference of the TSCs, which is encoded in the 4π-Josephson coupling of neighbouring MFs.

  14. Time-dependent spin and transport properties of a single-molecule magnet in a tunnel junction

    NASA Astrophysics Data System (ADS)

    Hammar, H.; Fransson, J.

    2016-08-01

    In single-molecule magnets, the exchange between a localized spin moment and the electronic background provides a suitable laboratory for studies of dynamical aspects of both local spin and transport properties. Here we address the time evolution of a localized spin moment coupled to an electronic level in a molecular quantum dot embedded in a tunnel junction between metallic leads. The interactions between the localized spin moment and the electronic level generate an effective interaction between the spin moment at different instances in time. Therefore, we show that, despite being a single-spin system, there are effective contributions of isotropic Heisenberg and anisotropic Ising and Dzyaloshinski-Moriya character acting on the spin moment. The interactions can be controlled by gate voltage, voltage bias, the spin polarization in the leads, in addition to external magnetic fields. Signatures of the spin dynamics are found in the transport properties of the tunneling system, and we demonstrate that measurements of the spin current may be used for readout of the local spin moment orientation.

  15. Enhanced spin Hall effect of tunneling light in hyperbolic metamaterial waveguide.

    PubMed

    Tang, Tingting; Li, Chaoyang; Luo, Li

    2016-01-01

    Giant enhancement of spin Hall effect of tunneling light (SHETL) is theoretically proposed in a frustrated total internal reflection (FTIR) structure with hyperbolic metamaterial (HMM). We calculate the transverse shift of right-circularly polarized light in a SiO2-air-HMM-air-SiO2 waveguide and analyze the physical mechanism of the enhanced SHETL. The HMM anisotropy can greatly increase the transverse shift of polarized light even though HMM loss might reduce it. Compared with transverse shift of transmitted light through a single HMM slab with ZnAlO/ZnO multilayer, the maximum transverse shift of tunneling light through a FTIR structure with identical HMM can be significantly enlarged by more than three times which reaches -38 μm without any amplification method. PMID:27477307

  16. Behavioural model of Spin Torque Transfer Magnetic Tunnel Junction, Using Verilog-A

    NASA Astrophysics Data System (ADS)

    Garg, Rishubh; Kumar, Deepak; Jindal, Navneet; Negi, Nandita; Ahuja, Chetna

    2012-11-01

    A novel simple and efficient model of Spin Torque Transfer Magnetic Tunnel Junction (STT-MTJ) is presented. The model is implemented using Verilog-A. The model accurately emulates the main properties of an STT-MTJ which includes Tunnel Magneto resistance Ratio (TMR), its dependence on the voltage bias and the Critical switching current. The novelty of the model lies in the fact that the voltage dependence of TMR has been modeled using a single equation dividing it into three different operating regions. A register based on the model is also developed. The model can be used for faster simulations of hybrid Magnetic CMOS circuits and in various other wide range of applications. The models were verified using Synopsys Hspice 2010.

  17. Enhanced spin Hall effect of tunneling light in hyperbolic metamaterial waveguide

    PubMed Central

    Tang, Tingting; Li, Chaoyang; Luo, Li

    2016-01-01

    Giant enhancement of spin Hall effect of tunneling light (SHETL) is theoretically proposed in a frustrated total internal reflection (FTIR) structure with hyperbolic metamaterial (HMM). We calculate the transverse shift of right-circularly polarized light in a SiO2-air-HMM-air-SiO2 waveguide and analyze the physical mechanism of the enhanced SHETL. The HMM anisotropy can greatly increase the transverse shift of polarized light even though HMM loss might reduce it. Compared with transverse shift of transmitted light through a single HMM slab with ZnAlO/ZnO multilayer, the maximum transverse shift of tunneling light through a FTIR structure with identical HMM can be significantly enlarged by more than three times which reaches −38 μm without any amplification method. PMID:27477307

  18. Enhanced spin Hall effect of tunneling light in hyperbolic metamaterial waveguide

    NASA Astrophysics Data System (ADS)

    Tang, Tingting; Li, Chaoyang; Luo, Li

    2016-08-01

    Giant enhancement of spin Hall effect of tunneling light (SHETL) is theoretically proposed in a frustrated total internal reflection (FTIR) structure with hyperbolic metamaterial (HMM). We calculate the transverse shift of right-circularly polarized light in a SiO2-air-HMM-air-SiO2 waveguide and analyze the physical mechanism of the enhanced SHETL. The HMM anisotropy can greatly increase the transverse shift of polarized light even though HMM loss might reduce it. Compared with transverse shift of transmitted light through a single HMM slab with ZnAlO/ZnO multilayer, the maximum transverse shift of tunneling light through a FTIR structure with identical HMM can be significantly enlarged by more than three times which reaches ‑38 μm without any amplification method.

  19. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

    PubMed

    Martin, Marie-Blandine; Dlubak, Bruno; Weatherup, Robert S; Yang, Heejun; Deranlot, Cyrile; Bouzehouane, Karim; Petroff, Frédéric; Anane, Abdelmadjid; Hofmann, Stephan; Robertson, John; Fert, Albert; Seneor, Pierre

    2014-08-26

    We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

  20. Spin incoherent effects in momentum resolved tunneling, transport, and Coulomb drag in Luttinger liquids

    NASA Astrophysics Data System (ADS)

    Fiete, Gregory

    2006-03-01

    In a one dimensional electron gas at low enough density the magnetic exchange energy J between neighboring electrons is exponentially suppressed relative to the Fermi energy, EF. At finite temperature T, the energy hierarchy J << T << EF can be reached, and we refer to this as the spin incoherent (SI) Luttinger liquid state. By using a model of a fluctuating Wigner solid, we theoretically explore the signatures of spin incoherence in the single particle Green’s function[1], momentum resolved tunneling[2], transport[3], and Coulomb drag[4]. In the SI Green’s function the spin modes of a Luttinger liquid (LL) are thermally washed out leaving only singular behavior from the charge modes. The charge modes are broadened in momentum space by an amount of order kF and the energy dependence of the tunneling density of states qualitatively changes from the low energy suppression of the LL regime to a possible low energy divergence in the SI regime. Such a state may be probed directly in momentum resolved tunneling between parallel quantum wires. Deep in the SI regime, the physics of transport and Coulomb drag can be mapped onto spinless electrons. Various crossovers in temperature and for finite systems connected to Fermi liquid leads are discussed. Both transport and Coulomb drag may exhibit interesting non-monotonic temperature dependence. [1] G. A. Fiete and L. Balents, Phys. Rev. Lett. 93, 226401 (2004). [2] G. A. Fiete, J. Qian, Y. Tserkovnyak, and B. I. Halperin, Phys. Rev. B 72, 045315 (2005). [3] G. A. Fiete, K. Le Hur, and L. Balents, Phys. Rev. B 72, 125416 (2005). [4] G. A. Fiete, K. Le Hur, and L. Balents, Submitted, cond-mat/0511715.

  1. Parametric excitation in a magnetic tunnel junction-based spin torque oscillator

    SciTech Connect

    Dürrenfeld, P.; Iacocca, E.; Åkerman, J.; Muduli, P. K.

    2014-02-03

    Using microwave current injection at room temperature, we demonstrate parametric excitation of a magnetic tunnel junction (MTJ)-based spin-torque oscillator (STO). Parametric excitation is observed for currents below the auto-oscillation threshold, when the microwave current frequency f{sub e} is twice the STO free-running frequency f{sub 0}. Above threshold, the MTJ becomes parametrically synchronized. In the synchronized state, the STO exhibits an integrated power up to 5 times higher and a linewidth reduction of two orders of magnitude, compared to free-running conditions. We also show that the parametric synchronization favors single mode oscillations in the case of multimode excitation.

  2. Observation of thermal spin-transfer torque via ferromagnetic resonance in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Zhaohui; Bai, Lihui; Chen, Xiaobin; Guo, Hong; Fan, X. L.; Xue, D. S.; Houssameddine, D.; Hu, C.-M.

    2016-08-01

    The thermal spin-transfer torque (TSTT) in magnetic tunneling junctions (MTJs) was systematically studied using electrical detection of ferromagnetic resonance (FMR). Evidence for the existence of TSTT in MTJs is observed. A temperature difference was applied across an MTJ acting as a TSTT on the free layer of the MTJ. The FMR of the free layer was then excited by a microwave current and electrically detected as a dc voltage. We found that the FMR line shape was changed by the TSTT, indicated by the ratio of dispersive and Lorentz components of the FMR spectra (D /L ). D /L increases by increasing the temperature difference. In addition, we analyze the magnetization orientation dependence of TSTT and provide solid evidence that this dependence differs from the magnetization orientation dependence of spin-transfer torque driven by a dc bias.

  3. Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

    NASA Astrophysics Data System (ADS)

    Yuan, Z. H.; Huang, L.; Feng, J. F.; Wen, Z. C.; Li, D. L.; Han, X. F.; Nakano, Takafumi; Yu, T.; Naganuma, Hiroshi

    2015-08-01

    MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir22Mn78 (6)/Ni80Fe20 (tNiFe = 20-70)/Ru (0.9)/Co40Fe40B20 (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

  4. Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

    SciTech Connect

    Yang, G.; Li, D. L.; Wang, S. G. Ma, Q. L.; Liang, S. H.; Wei, H. X.; Han, X. F.; Hesjedal, T.; Ward, R. C. C.; Kohn, A.; Elkayam, A.; Tal, N.; Zhang, X.-G.

    2015-02-28

    Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

  5. Spin-Tunnel Investigation of a 1/20-Scale Model of the Northrop F-5E Airplane

    NASA Technical Reports Server (NTRS)

    Scher, Stanley H.; White, William L.

    1977-01-01

    An investigation has been conducted in the Langley spin tunnel to determine the spin and recovery characteristics of a 1/20-scale model of the Northrop F-5E airplane. The investigation included erect and inverted spins, a range of center-of- gravity locations and moments of inertia, symmetric and asymmetric store loadings, and a determination of the parachute size required for emergency spin recovery. The effects of increased elevator trailing-edge-up deflections, of leading-edge and trailing-edge flap deflections, and of simulating the geometry of large external stores were also determined.

  6. Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well

    SciTech Connect

    Yang, Xiao-Jie Kiba, Takayuki; Yamamura, Takafumi; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

    2014-01-06

    We investigate the electron-spin injection dynamics via tunneling from an In{sub 0.1}Ga{sub 0.9}As quantum well (QW) to In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs.

  7. Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

    SciTech Connect

    Park, June-Young; Park, Byong-Guk; Baek, Seung-heon Chris; Park, Seung-Young; Jo, Younghun

    2015-11-02

    We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced at a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.

  8. Photoenhanced spin/valley polarization and tunneling magnetoresistance in a ferromagnetic-normal-ferromagnetic silicene junction

    NASA Astrophysics Data System (ADS)

    Ho, Le Bin; Nguyen Lan, Tran

    2016-09-01

    We theoretically demonstrate a simple way to significantly enhance the spin/valley polarizations and tunneling magnetoresistnace (TMR) in a ferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying a circularly polarized light in the off-resonant regime to the second ferromagnetic (FM) region. We show that the fully spin-polarized current can be realized in certain ranges of light intensity. Increasing the incident energy in the presence of light will induce a transition of perfect spin polarization from positive to negative or vice versa depending on the magnetic configuration (parallel or anti-parallel) of FNF junction. Additionally, under a circularly polarized light, valley polarization is very sensitive to electric field and the perfect valley polarization can be achieved even when staggered electric field is much smaller than exchange field. The most important result we would like to emphasize in this paper is that the perfect spin polarization and 100% TMR induced by a circularly polarized light are completely independent of barrier height in the normal region. Furthermore, the sign reversal of TMR can be observed when the polarized direction of light is changed. A condition for observing the 100% TMR is also reported. Our results are expected to be informative for real applications of a FNF silicene junction, especially in spintronics.

  9. Suppression of spin transport in ferromagnet/oxide/semiconductor junctions by magnetic impurities in the tunnel barrier

    NASA Astrophysics Data System (ADS)

    Spiesser, Aurélie; Saito, Hidekazu; Yuasa, Shinji; Jansen, Ron

    2016-10-01

    We have studied how the insertion of sub-monolayer amounts of Mn impurities in the middle of the oxide tunnel barrier of Fe/GeO2 on p-type Ge affects the spin transport, using three-terminal Hanle measurements. Strikingly, the magnitude of the Hanle spin voltage is strongly reduced by increasing the amount of Mn dopants and is even completely absent for devices having an amount of Mn impurities equivalent to a 0.2-nm-thick layer. This demonstrates that magnetic impurities in the tunnel barrier are detrimental to the spin transport in ferromagnet/oxide/semiconductor junctions, and that the localized states associated with such magnetic impurities do not produce three-terminal Hanle spin signals.

  10. Spin-lattice relaxation via quantum tunneling in diluted crystals of Fe4 single-molecule magnets

    NASA Astrophysics Data System (ADS)

    Repollés, A.; Cornia, A.; Luis, F.

    2014-02-01

    We investigate the dynamic susceptibility of Fe4 single-molecule magnets with integer spin (S =5) in the form of pure crystals as well as diluted in crystals of isostructural, but nonmagnetic, Ga4 clusters. Below approximately 1 K, the spin-lattice relaxation becomes dominated by a temperature-independent process. The spin-lattice relaxation time τ measured in this "quantum regime" is 12 orders of magnitude shorter than the characteristic time scale of direct phonon-induced processes but agrees with the relaxation times of pure (i.e., not assisted by phonons) spin tunneling events. The present results show that the latter phenomenon, despite conserving the energy of the ensemble of electronic and nuclear spins, drives the thermalization of electronic spins at very low temperatures. The spin-lattice relaxation time scales with the concentration of Fe4, thus suggesting that the main effect of dipolar interactions is to block tunneling. The data show therefore no evidence for the contribution of collective phonon emission processes, such as phonon superradiance, to the spin-lattice relaxation.

  11. Rotary Balance Wind Tunnel Testing for the FASER Flight Research Aircraft

    NASA Technical Reports Server (NTRS)

    Denham, Casey; Owens, D. Bruce

    2016-01-01

    Flight dynamics research was conducted to collect and analyze rotary balance wind tunnel test data in order to improve the aerodynamic simulation and modeling of a low-cost small unmanned aircraft called FASER (Free-flying Aircraft for Sub-scale Experimental Research). The impetus for using FASER was to provide risk and cost reduction for flight testing of more expensive aircraft and assist in the improvement of wind tunnel and flight test techniques, and control laws. The FASER research aircraft has the benefit of allowing wind tunnel and flight tests to be conducted on the same model, improving correlation between wind tunnel, flight, and simulation data. Prior wind tunnel tests include a static force and moment test, including power effects, and a roll and yaw damping forced oscillation test. Rotary balance testing allows for the calculation of aircraft rotary derivatives and the prediction of steady-state spins. The rotary balance wind tunnel test was conducted in the NASA Langley Research Center (LaRC) 20-Foot Vertical Spin Tunnel (VST). Rotary balance testing includes runs for a set of given angular rotation rates at a range of angles of attack and sideslip angles in order to fully characterize the aircraft rotary dynamics. Tests were performed at angles of attack from 0 to 50 degrees, sideslip angles of -5 to 10 degrees, and non-dimensional spin rates from -0.5 to 0.5. The effects of pro-spin elevator and rudder deflection and pro- and anti-spin elevator, rudder, and aileron deflection were examined. The data are presented to illustrate the functional dependence of the forces and moments on angle of attack, sideslip angle, and angular rate for the rotary contributions to the forces and moments. Further investigation is necessary to fully characterize the control effectors. The data were also used with a steady state spin prediction tool that did not predict an equilibrium spin mode.

  12. Tunneling, decoherence, and entanglement of two spins interacting with a dissipative bath

    SciTech Connect

    Sahrapour, Mohammad M.; Makri, Nancy

    2013-03-21

    We use numerically exact iterative path integral methods to investigate the decoherence and entanglement dynamics of a tunneling pair of two coupled qubits (spins) system interacting with a dissipative bath. We find that decoherence is generally accompanied by the destruction of entanglement, although the specifics of this destruction depend sensitively on the parameters of the Hamiltonian (qubit-qubit coupling and/or energy bias), the strength of dissipation, the temperature, and the choice of initial condition. We also observe that dissipation can in some cases generate a substantial amount of entanglement. Finally, if an entangled eigenstate exists which does not couple to the environment, the long-time entanglement can significantly exceed the value corresponding to the Boltzmann equilibrium state.

  13. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

    SciTech Connect

    Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.

    2014-09-29

    The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

  14. Anomalous tunneling of collective excitations and effects of superflow in the polar phase of a spin-1 spinor Bose-Einstein condensate

    SciTech Connect

    Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

    2011-07-15

    We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.

  15. High spin-dependent tunneling magnetoresistance in magnetite powders made by arc-discharge

    NASA Astrophysics Data System (ADS)

    Prakash, T.; Williams, G. V. M.; Kennedy, J.; Rubanov, S.

    2016-09-01

    We report the successful synthesis of ferrimagnetic magnetite powders made using an arc-discharge method in a partial oxygen atmosphere. X-ray and electron diffraction measurements show that the powders also contain some antiferromagnetic hematite and a small amount of FeO and Fe that has not oxidized. The Raman data show that there is a small fraction of ferrimagnetic maghemite that cannot be seen in the x-ray diffraction data. There is a wide particle size distribution where there are nanoparticles as small as 7 nm, larger faceted nanoparticles, and particles that are up to 25 μm in diameter. The saturation magnetization at high magnetic fields is ˜74% of that found in the bulk magnetite, where the lower value is due to the presence of some antiferromagnetic hematite. The temperature dependence of the saturation magnetization changes at the Verwey transition temperature, and it has a power low dependence with an exponent of 3/2 at low temperatures and 2.23 at high temperatures above the Verwey transition temperature. Electronic transport measurements were made on a cold-pressed pellet and the electrical resistance had an exponential dependence on temperature that may be due to electrostatic charging during tunneling between small nanoparticles. A large magnetoresistance from spin-dependent tunneling between the magnetite particles was observed that reached -9.5% at 120 K and 8 T.

  16. A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

    NASA Astrophysics Data System (ADS)

    van't Erve, Olaf

    2014-03-01

    New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

  17. Time resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices

    NASA Astrophysics Data System (ADS)

    Wolf, Georg; Chaves-O'Flynn, Gabriel; Kent, Andrew D.; Kardasz, Bartek; Watts, Steve; Pinarbasi, Mustafa

    2014-08-01

    In this work we report on time resolved magnetization reversal driven by spin transfer torque in an orthogonal spin transfer (OST) magnetic tunnel junction device. We focus on the transitions from parallel (P) to antiparallel (AP) states and the reverse transitions (AP to P) under the influence of 10 ns voltage pulses. The electrical response is monitored with a fast real-time oscilloscope and thus timing information of the reversal process is obtained. The P to AP transition switching time decreases with increasing current and shows only direct switching behavior. The AP to P transition shows similar behavior, but has a broader distribution of switching times at high currents. The rare AP to P switching events that occur at later times are due to the occurrence of a pre-oscillation, which could be identified in time resolve voltage traces. A possible origin of these pre-oscillations is seen in micromagnetic simulations, where they are associated with the breakdown of the uniform precession of the magnetization, and lead to reversal of the magnetization at later times.

  18. Statistical and Time Resolved Studies of Switching in Magnetic Tunnel Junction based Orthogonal Spin Transfer Devices

    NASA Astrophysics Data System (ADS)

    Liu, Huanlong; Bedau, Daniel; Backes, Dirk; Langer, Jurgen; Manandhar, Pradeep; Kent, Andrew

    2012-02-01

    We report statistical and single-shot time-resolved studies of spin transfer switching in OST-MRAM devices. These devices consist of a perpendicular polarizer integrated into a layer stack with an in-plane magnetized free and reference layer, which form the electrodes of a magnetic tunnel junction [1]. The perpendicular polarizer provides an initial torque -- designed to reduce the incubation delay in switching. The demagnetization field created during the switching can further accelerate the reversal process [2]. The devices switch reliably at 0.7 V and 500 ps duration for both voltage polarities. We record the change of the device resistance in real time during the pulse to obtain the time needed to initiate the switching τstart and the time between the initiation and the end of the switching τswitch for every single switching event. τswitch is determined to be less than a few hundreds of picoseconds, on the order of the precession time due to the demagnetization field and we find evidence for precession reversal under certain conditions. We further present results on the effects of pulse amplitude and applied field on τstart and τswitch. This work was supported by Spin Transfer Technologies. [1] H. Liu et al., APL 97, 242510 (2010). [2] A. D. Kent et al., APL 84, 3897 (2004).

  19. Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

    SciTech Connect

    Yuan, Z. H.; Huang, L.; Feng, J. F. Wen, Z. C.; Li, D. L.; Han, X. F.; Nakano, Takafumi; Naganuma, Hiroshi; Yu, T.

    2015-08-07

    MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magnetic NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.

  20. Size dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions

    NASA Astrophysics Data System (ADS)

    Devolder, T.; Le Goff, A.; Nikitin, V.

    2016-06-01

    We have time resolved the spin-transfer-torque-induced switching in perpendicularly magnetized tunnel junctions of diameters from 50 to 250 nm in the subthreshold thermally activated regime. When the field and the spin torque concur to both favor the P to AP transition, the reversal yields monotonic resistance ramps that can be interpreted as a domain wall propagation through the device at velocities of the order of 17 to 30 nm/ns; smaller cells switch faster, and proportionally to their diameter. At the largest sizes, transient domain wall pinning can occasionally occur. When the field hinders the P to AP transition triggered by the spin torque, the P to AP switching is preceded by repetitive switching attempts, during which the resistance transiently increases until successful reversal occurs. At 50 nm, the P to AP switching proceeds reproducibly in 3 ns, with a monotonic featureless increase of the device resistance. In the reverse transition (AP to P), the variability of thermally activated reversal is not restricted to stochastic variations of incubation delays before the onset of reversal: several reversal paths are possible even in the smallest perpendicularly magnetized junctions. Besides, the nonuniform nature of the magnetic response seems still present at the nanoscale, with sometimes electrical signatures of strong disorder during the AP to P reversal. The AP to P transition is preceded by a strong instability of the AP states in devices larger than 100 nm. The resistance becomes extremely agitated before switching to P in a path yielding a slow (20 to 50 ns) and irregular increase of the conductance with substantial event-to-event variability. Unreversed bubbles of typical diameter 60 nm can persist a few additional microseconds in the largest junctions. The complexity of the AP to P switching is reduced but not suppressed when the junctions are downsized below 60 nm. The instability of the initial AP state is no longer detected but the other features

  1. Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

    NASA Astrophysics Data System (ADS)

    Paul, William; Baumann, Susanne; Lutz, Christopher P.; Heinrich, Andreas J.

    2016-07-01

    We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5-35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

  2. Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM.

    PubMed

    Paul, William; Baumann, Susanne; Lutz, Christopher P; Heinrich, Andreas J

    2016-07-01

    We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5-35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function. PMID:27475577

  3. Spin-tunnel investigation of the spinning characteristics of typical single-engine general aviation airplane designs. 2: Low-wing model A; tail parachute diameter and canopy distance for emergency spin recovery

    NASA Technical Reports Server (NTRS)

    Burk, S. M., Jr.; Bowman, J. S., Jr.; White, W. L.

    1977-01-01

    A spin tunnel study is reported on a scale model of a research airplane typical of low-wing, single-engine, light general aviation airplanes to determine the tail parachute diameter and canopy distance (riser length plus suspension-line length) required for energency spin recovery. Nine tail configurations were tested, resulting in a wide range of developed spin conditions, including steep spins and flat spins. The results indicate that the full-scale parachute diameter required for satisfactory recovery from the most critical conditions investigated is about 3.2 m and that the canopy distance, which was found to be critical for flat spins, should be between 4.6 and 6.1 m.

  4. Spin- and symmetry-filtering combined tunnel magnetoresistance through epitaxial MgO/EuS tunnel barriers

    NASA Astrophysics Data System (ADS)

    Gao, Zhiwei; Yang, Yihang; Liu, Fen; Xue, Qian; Miao, Guo-Xing

    2016-07-01

    We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is attributed to the forced nonspecular conductance across the EuS conduction band minimum located at the X points, rather than the desired ∆1 conductance centered around the Γ point.

  5. Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

    SciTech Connect

    Kodzuka, M.; Ohkubo, T.; Hono, K.; Ikeda, S.; Ohno, H.; Gan, H. D.

    2012-02-15

    The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x}/MgO/(Co{sub 25}Fe{sub 75}){sub 100-x}B{sub x} (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co{sub 25}Fe{sub 75}){sub 67}B{sub 33}, while good epitaxy was observed between (001) textured MgO and (Co{sub 25}Fe{sub 75}){sub 78}B{sub 22} electrodes.

  6. Spin Tunnel Investigation of a 1/30 Scale Model of the North American A-5A Airplane

    NASA Technical Reports Server (NTRS)

    Lee, Henry A.

    1964-01-01

    An investigation has been made in the Langley spin tunnel to determine the erect and inverted spin and recovery characteristics of a 1/30-scale dynamic model of the North American A-5A airplane. Tests were made for the basic flight design loading with the center of gravity at 30-percent mean aerodynamic chord and also for a forward position and a rearward position with the center of gravity at 26-percent and 40-percent mean aerodynamic chord, respectively. Tests were also made to determine the effect of full external wing tanks on both wings, and of an asymmetrical condition when only one full tank is carried.

  7. Enhancement of tunneling density of states at a Y junction of spin-1/2 Tomonaga-Luttinger liquid wires

    NASA Astrophysics Data System (ADS)

    Mardanya, Sougata; Agarwal, Amit

    2015-07-01

    We calculate the tunneling density of states (TDOS) in a dissipationless three-wire junction of interacting spin-1/2 electrons, and find an anomalous enhancement of the TDOS in the zero-bias limit, even for repulsive interactions for several bosonic fixed points. This enhancement is physically related to the reflection of holes from the junction for incident electrons, and it occurs only in the vicinity of the junction (x spin excitations and ω is the bias frequency), crossing over to the bulk value, which is always suppressed at larger distances. The TDOS exponent can be directly probed in an STM experiment by measuring the differential tunneling conductance as a function of either the bias voltage or temperature as done in C. Blumenstein et al., Nat. Phys. 7, 776 (2011), 10.1038/nphys2051.

  8. Quasiprobability distribution functions for finite-dimensional discrete phase spaces: Spin-tunneling effects in a toy model

    NASA Astrophysics Data System (ADS)

    Marchiolli, Marcelo A.; Silva, Evandro C.; Galetti, Diógenes

    2009-02-01

    We show how quasiprobability distribution functions defined over N2 -dimensional discrete phase spaces can be used to treat physical systems described by a finite space of states which exhibit spin-tunneling effects. This particular approach is then applied to the Lipkin-Meshkov-Glick model in order to obtain the time evolution of the discrete Husimi function, and as a by-product the energy gap for a symmetric combination of ground and first excited states. Moreover, we also show how an angle-based potential approach can be efficiently employed to explain qualitatively certain features of the energy gap in terms of a spin tunneling. Entropy functionals are also discussed in this context. Such results reinforce not only the formalism per se but also the possibility of some future potential applications in other branches of physics.

  9. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

    SciTech Connect

    Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2014-05-26

    We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

  10. Effect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co40Fe40B20

    NASA Astrophysics Data System (ADS)

    Lee, Soogil; Kim, Sanghoon; Son, Jangyup; Cha, Jongin; Pathak, Sachin; Hong, Jongill

    2016-09-01

    We found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co40Fe40B20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance–area product (R s A) of this STC on n-type Ge after postannealing at 350 °C (1.97 × 106 Ω·µm2) is nearly one order of magnitude larger than that of the as-deposited one (2.34 × 105 Ω·µm2). The dependence of R s A on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.

  11. Spin-filtering effect of thin Al{sub 2}O{sub 3} barrier on tunneling magnetoresistance

    SciTech Connect

    Joo, Sungjung; Jung, K. Y.; Jun, K. I.; Shin, K. H.; Kim, D. S.; Hong, J. K.; Rhie, K. E-mail: krhie@korea.ac.kr; Lee, B. C. E-mail: krhie@korea.ac.kr

    2014-04-14

    Tunneling magnetoresistance (TMR) dependence on the Al{sub 2}O{sub 3} barrier thickness was investigated for CoFe/Al{sub 2}O{sub 3}/CoFe magnetic tunnel junctions (MTJs). MTJs with very thin Al{sub 2}O{sub 3} layers were grown by inserting an amorphous FeZr buffer layer whose role is only to reduce the roughness of bottom electrode. The TMR decreased as the thickness of the Al{sub 2}O{sub 3} layer was reduced. The results are analyzed with the dependence of the spin-filtering effect on the Al{sub 2}O{sub 3} thickness. It was found that a simple model of separating sp- and d-like electrons does not work, and it may suggest that the tunneling electrons are in rather hybridized state.

  12. Non-rigid Group Theory, Tunneling Splittings and Nuclear Spin Statistics of Water Pentamer: (H2O5)

    SciTech Connect

    Balasubramanian, K

    2004-02-02

    The character table of the fully non-rigid water pentamer, (H{sub 2}O){sub 5} is derived for the first time. The group of all feasible permutations is the wreath product group S{sub 5}[S{sub 2}] and it consists of 3840 operations divided into 36 conjugacy classes and irreducible representations. We have shown that the full character table can be constructed using elegant matrix type generator algebra. The character table has been applied to the water pentamer by obtaining the nuclear spin statistical weights of the rovibronic levels and tunneling splittings of the fully non-rigid pentamer. We have also obtained the statistical weights and tunneling splittings of a semi-rigid deuterated pentamer that exhibits pseudo rotation with an averaged C{sub 5h}(G{sub 10}) symmetry used in the assignment of vibration-rotation-tunneling spectra . The correlation tables have been constructed for the semirigid (G{sub 10}) to non-rigid (G{sub 3840}) groups for the rotational levels and tunneling levels. The nuclear spin statistical weights have also been derived for both the limits.

  13. Vertical Spin Tunnel Testing and Stability Analysis of Multi-Mission Earth Entry Vehicles

    NASA Technical Reports Server (NTRS)

    Glaab, Louis J.; Morelli, Eugene A.; Fremaux, C. Michael; Bean, Jacob

    2014-01-01

    Multi-Mission Earth Entry Vehicles (MMEEVs) are blunt-body vehicles designed with the purpose of transporting payloads from space to the surface of the Earth. To achieve high reliability and minimum weight, MMEEVs avoid using limited-reliability systems, such as parachutes, retro-rockets, and reaction control systems and rely on the natural aerodynamic stability of the vehicle throughout the Entry, Descent, and Landing phases of flight. Testing in NASA Langley's 20-FT Vertical Spin Tunnel (20-FT VST), dynamically-scaled MMEEV models was conducted to improve subsonic aerodynamic models and validate stability criteria for this class of vehicle. This report documents the resulting data from VST testing for an array of 60-deg sphere-cone MMEEVs. Model configurations included were 1.2 meter, and 1.8 meter designs. The addition of a backshell extender, which provided a 150% increase in backshell diameter for the 1.2 meter design, provided a third test configuration. Center of Gravity limits were established for all MMEEV configurations. An application of System Identification (SID) techniques was performed to determine the aerodynamic coefficients in order to provide databases for subsequent 6-degree-of-freedom simulations.

  14. Spintronic logic design methodology based on spin Hall effect-driven magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Kang, Wang; Wang, Zhaohao; Zhang, Youguang; Klein, Jacques-Olivier; Lv, Weifeng; Zhao, Weisheng

    2016-02-01

    Conventional complementary metal-oxide-semiconductor (CMOS) technology is now approaching its physical scaling limits to enable Moore’s law to continue. Spintronic devices, as one of the potential alternatives, show great promise to replace CMOS technology for next-generation low-power integrated circuits in nanoscale technology nodes. Until now, spintronic memory has been successfully commercialized. However spintronic logic still faces many critical challenges (e.g. direct cascading capability and small operation gain) before it can be practically applied. In this paper, we propose a standard complimentary spintronic logic (CSL) design methodology to form a CMOS-like logic design paradigm. Using the spin Hall effect (SHE)-driven magnetic tunnel junction (MTJ) device as an example, we demonstrate CSL implementation, functionality and performance. This logic family provides a unified design methodology for spintronic logic circuits and partly solves the challenges of direct cascading capability and small operation gain in the previously proposed spintronic logic designs. By solving a modified Landau-Lifshitz-Gilbert equation, the magnetization dynamics in the free layer of the MTJ is theoretically described and a compact electrical model is developed. With this electrical model, numerical simulations have been performed to evaluate the functionality and performance of the proposed CSL design. Simulation results demonstrate that the proposed CSL design paradigm is rather promising for low-power logic computing.

  15. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

    NASA Astrophysics Data System (ADS)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-09-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  16. On the valve nature of a monolayer of aligned molecular magnets in tunneling spin-polarized electrons: Towards organic molecular spintronics

    SciTech Connect

    Chakrabarti, Sudipto; Pal, Amlan J.

    2014-01-06

    We form a monolayer of magnetic organic molecules and immobilize their moments pointing either upwards or downwards with respect to the substrate through an electrostatic-binding process. Such a monolayer is probed with a scanning tunneling microscope tip, which is also magnetized with the magnetization vector pointing towards (or away from) apex of the tip. From spin-polarized tunneling current, we show that the current was higher when magnetization vectors of the tip and molecules were parallel as compared to that when they were anti-parallel. We show that for tunneling of spin-polarized electrons, aligned organic molecular magnets can act as a valve.

  17. An experimental study of the effect of tail configuration on the spinning characteristics of general aviation aircraft. M.S. Thesis; [static wind tunnel force measurements

    NASA Technical Reports Server (NTRS)

    Ballin, M. G.

    1982-01-01

    The feasibility of using static wind tunnel tests to obtain information about spin damping characteristics of an isolated general aviation aircraft tail was investigated. A representative tail section was oriented to the tunnel free streamline at angles simulating an equilibrium spin. A full range of normally encountered spin conditions was employed. Results of parametric studies performed to determine the effect of spin damping on several tail design parameters show satisfactory agreement with NASA rotary balance tests. Wing and body interference effects are present in the NASA studies at steep spin attitudes, but agreement improves with increasing pitch angle and spin rate, suggesting that rotational flow effects are minimal. Vertical position of the horizontal stabilizer is found to be a primary parameter affecting yaw damping, and horizontal tail chordwise position induces a substantial effect on pitching moment.

  18. Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

    SciTech Connect

    Akushichi, T. Shuto, Y.; Sugahara, S.; Takamura, Y.

    2015-05-07

    We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.

  19. 14. EXTERIOR VIEW OF OLD TENFOOT WIND TUNNEL (1991). ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. EXTERIOR VIEW OF OLD TEN-FOOT WIND TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  20. 13. EXTERIOR VIEW OF OLD TENFOOT WIND TUNNEL (1991). ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. EXTERIOR VIEW OF OLD TEN-FOOT WIND TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  1. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT).

    PubMed

    Zhao, Weisheng; Duval, Julien; Klein, Jacques-Olivier; Chappert, Claude

    2011-01-01

    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

  2. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT)

    NASA Astrophysics Data System (ADS)

    Zhao, Weisheng; Duval, Julien; Klein, Jacques-Olivier; Chappert, Claude

    2011-12-01

    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

  3. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT)

    PubMed Central

    2011-01-01

    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits. PMID:21711868

  4. Quantum-tunneling dynamics of a spin-polarized Fermi gas in a double-well potential

    SciTech Connect

    Salasnich, L.; Mazzarella, G.; Toigo, F.; Salerno, M.

    2010-02-15

    We study the exact dynamics of a one-dimensional spin-polarized gas of fermions in a double-well potential at zero and finite temperature. Despite the system being made of noninteracting fermions, its dynamics can be quite complex, showing strongly aperiodic spatio-temporal patterns during the tunneling. The extension of these results to the case of mixtures of spin-polarized fermions interacting with self-trapped Bose-Einstein condensates (BECs) at zero temperature is considered as well. In this case we show that the fermionic dynamics remains qualitatively similar to that observed in the absence of BEC but with the Rabi frequencies of fermionic excited states explicitly depending on the number of bosons and on the boson-fermion interaction strength. From this, the possibility of controlling quantum fermionic dynamics by means of Feshbach resonances is suggested.

  5. Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions

    SciTech Connect

    Zhang, Xiangli; Zhang, Zongzhi; Liu, Yaowen; Jin, Q. Y.

    2015-05-07

    Macrospin simulations are performed to model the magnetization switching driven by the combined action of electric-field and spin-polarized electric current (spin-transfer torque; STT) in MgO/CoFeB based magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy. The results indicate that at low current case, the free layer magnetization shows a fast toggle-like switching, the final parallel or antiparallel magnetization state is determined by the electric-field effect, and the STT just helps or resists it to reach the final state depending on the current direction. However, with the increase of current strength, the contribution of STT effect gradually increases, which eventually achieves a deterministic magnetization switching state. Simulations further demonstrate that by appropriately tuning the parameters of applied electric-field and current the power consumption can be easily reduced by two orders of magnitude.

  6. Spin Transfer Torque Switching and Perpendicular Magnetic Anisotropy in Full Heusler Alloy Co2FeAl-BASED Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Sukegawa, H.; Wen, Z. C.; Kasai, S.; Inomata, K.; Mitani, S.

    2014-12-01

    Some of Co-based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co-based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co2FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.

  7. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Awan, I. T.; Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2014-08-01

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ˜20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ˜-75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  8. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    SciTech Connect

    Awan, I. T.; Galvão Gobato, Y.; Galeti, H. V. A.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2014-08-07

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  9. Effect of uniaxial strain on the tunnel magnetoresistance of T-shaped graphene nanoribbon based spin-valve

    NASA Astrophysics Data System (ADS)

    Fouladi, A. Ahmadi

    2016-07-01

    We theoretically investigated the spin-dependent transport through a T-shaped graphene nanoribbon (TsGNR) based spin-valve consisting of armchair graphene sandwiched between two semi-infinite ferromagnetic armchair graphene nanoribbon leads in the presence of an applied uniaxial strain. Based on a tight-binding model and standard nonequilibrium Green's function technique, it is demonstrated that the tunnel magnetoresistance (TMR) for the system can be increased about 98% by tuning the uniaxial strain. Our results show that the absolute values of TMR around the zero bias voltage for compressive strain are larger than tensile strain. In addition, the TMR of the system can be nicely controlled by GNR width.

  10. Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal-oxide-semiconductor field effect transistor structure (invited)

    NASA Astrophysics Data System (ADS)

    Hamaya, K.; Ando, Y.; Masaki, K.; Maeda, Y.; Fujita, Y.; Yamada, S.; Sawano, K.; Miyao, M.

    2013-05-01

    Using a metal-oxide-semiconductor field effect transistor structure with a high-quality CoFe/n+-Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ˜4.5 × 1015 cm-3 at room temperature. By applying the gate voltage (VG) to the channel, we obtain sufficient bias currents (IBias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing IBias, it is reduced by increasing VG interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.

  11. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Rodrigues, D. H.; Brasil, M. J. S. P.; Orlita, M.; Kunc, J.; Galeti, H. V. A.; Henini, M.; Taylor, D.; Galvão Gobato, Y.

    2016-04-01

    We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x  =  5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.

  12. Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots

    NASA Astrophysics Data System (ADS)

    House, M. G.; Kobayashi, T.; Weber, B.; Hile, S. J.; Watson, T. F.; van der Heijden, J.; Rogge, S.; Simmons, M. Y.

    2015-11-01

    Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet-triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot-lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon.

  13. Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO.

    PubMed

    Schleicher, F; Halisdemir, U; Lacour, D; Gallart, M; Boukari, S; Schmerber, G; Davesne, V; Panissod, P; Halley, D; Majjad, H; Henry, Y; Leconte, B; Boulard, A; Spor, D; Beyer, N; Kieber, C; Sternitzky, E; Cregut, O; Ziegler, M; Montaigne, F; Beaurepaire, E; Gilliot, P; Hehn, M; Bowen, M

    2014-01-01

    Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics. PMID:25088937

  14. Tunneling conductance for Majorana fermions in spin-orbit coupled semiconductor-superconductor heterostructures using superconducting leads

    NASA Astrophysics Data System (ADS)

    Sharma, Girish; Tewari, Sumanta

    2016-05-01

    It has been recently pointed out that the use of a superconducting (SC) lead instead of a normal metal lead can suppress the thermal broadening effects in tunneling conductance from Majorana fermions, helping reveal the quantized conductance of 2 e2/h . In this paper we discuss the specific case of tunneling conductance with SC leads of spin-orbit coupled semiconductor-superconductor (SM-SC) heterostructures in the presence of a Zeeman field, a system which has been extensively studied both theoretically and experimentally using a metallic lead. We examine the d I /d V spectra using a SC lead for different sets of physical parameters including temperature, tunneling strength, wire length, magnetic field, and induced SC pairing potential in the SM nanowire. We conclude that in a finite wire the Majorana splitting energy Δ E , which has nontrivial dependence on these physical parameters, remains responsible for the d I /d V peak broadening, even when the temperature broadening is suppressed by the SC gap in the lead. In a finite wire the signatures of Majorana fermions with a SC lead are oscillations of quasi-Majorana peaks about bias V =±Δlead , in contrast to the case of metallic leads where such oscillations are about zero bias. Our results will be useful for analysis of future experiments on SM-SC heterostructures using SC leads.

  15. Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

    SciTech Connect

    Kinjo, Hidekazu Machida, Kenji; Aoshima, Ken-ichi; Kato, Daisuke; Kuga, Kiyoshi; Kikuchi, Hiroshi; Shimidzu, Naoki; Matsui, Koichi

    2014-05-28

    Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

  16. Magnetoelectric coupling and spin-dependent tunneling in Fe/PbTiO3/Fe multiferroic heterostructure with a Ni monolayer inserted at one interface

    NASA Astrophysics Data System (ADS)

    Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

    2015-08-01

    We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO3/Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO3/Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances.

  17. Magnetoelectric coupling and spin-dependent tunneling in Fe/PbTiO{sub 3}/Fe multiferroic heterostructure with a Ni monolayer inserted at one interface

    SciTech Connect

    Dai, Jian-Qing Zhang, Hu; Song, Yu-Min

    2015-08-07

    We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO{sub 3}/Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances.

  18. A proposal of a spin cell using light on magnetic tunneling junctions.

    PubMed

    Chen, Jingzhe; Hu, Yibin; Guo, Hong; Chen, Xiaobin

    2014-01-01

    We propose and theoretically investigate a spin cell using light as the power source. Such a device can be realized when a quantum dot is connected to two ferromagnetic electrodes. In the case of identical electrodes, a pure spin current (PSC) can be generated when the light is shone on the quantum dot. Moreover, the PSC can be tuned continuously from zero to the maximum when the magnetic moment orientations of the two electrodes are changed from parallel to anti-parallel. The output spin bias is linear with the light power in the low power region, while it approaches the theoretical limit when the power is extremely high because of the electrodes' renormalization by the spin transfer torque. This effect implies that light energy can be transferred to electron spin directly, which may be applicable in future opto-spintronics.

  19. Radio-frequency magnetic susceptibility of spin ice crystals Dy2Ti2O7 using tunnel diode resonator

    NASA Astrophysics Data System (ADS)

    Teknowijoyo, Serafim; Cho, Kyuil; Tanatar, Makariy A.; Prozorov, Ruslan; Cava, Robert J.; Krizan, Jason W.; Ames Laboratory; Iowa State University Team; Princeton University Collaboration

    Spin ice compound, Dy2Ti2O7, has shown complex frequency - dependent magnetic behavior at low temperatures. While the DC measurements show conventional paramagnetic behavior, finite frequency susceptibility shows two regimes, - complex kagomé ice behavior at around 2 K and spin collective behavior above 10 K, depending on the frequency. Conventional AC susceptometry is limited to frequencies in a kHz range, but to get an insight into the possible Arrhenius activated behavior and characteristic relaxation times, higher frequencies are desired. We used self-oscillating tunnel-diode resonator (TDR) to probe magnetic susceptibility at 14.6 MHz, in the presence of a DC magnetic field and down to 50 mK. We found an unusual non-monotonic field dependence of the lower transition temperature, most likely associated with different spin configurations in a kagomé ice and an activated behavior of the upper transition, which has now shifted to 50 K range. This work was supported by the U.S. DOE BES MSED and was performed at the Ames Laboratory, Iowa State University under Contract DE-AC02-07CH11358. The work at Princeton university was supported by DOE BES Grant Number DE-FG02-08ER46544.

  20. Are insulating LiF barriers relevant for spin-polarized tunnelling applications? Insights from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Vlaic, P.; Burzo, E.; Carva, K.

    2016-08-01

    Structural, electronic and magnetic properties of Fe/LiF (0 0 1) interfaces and spin-polarized transport properties of Fe/LiF/Fe (0 0 1) heterostructures are studied by means of self-consistent atomistic first-principles calculations. Total energy calculations performed for various interfacial geometries show that the Fe/LiF (0 0 1) interface with Fe atoms located above anionic sites is the most stable. F–Fe and Li–Fe substitutional intermixings at Fe/LiF (0 0 1) interfaces are not energetically favourable, but F accumulation in the interstitial void spaces at Fe/LiF (0 0 1) interfaces is possible. The magnetism of interfacial Fe atoms is robust. The majority-spin ferromagnetic state conductances decay rapidly with respect to the barrier thickness, while the minority-spin ones have very large contributions at specific hot spots and play a major role in the transport properties. Depending on the interfacial geometry, tunnelling magnetoresistance ratios ranging from 460%–2400% are evidenced. Interfacial interdiffusion can affect the transport properties. The exchange coupling between Fe electrodes through LiF barriers is negligible.

  1. Observing spin excitations in 3 d transition-metal adatoms on Pt(111) with inelastic scanning tunneling spectroscopy: A first-principles perspective

    NASA Astrophysics Data System (ADS)

    Schweflinghaus, Benedikt; dos Santos Dias, Manuel; Lounis, Samir

    2016-01-01

    Spin excitations in atomic-scale nanostructures have been investigated with inelastic scanning tunneling spectroscopy, sometimes with conflicting results. In this work, we present a theoretical viewpoint on a recent experimental controversy regarding the spin excitations of Co adatoms on Pt(111). While one group [Balashov et al., Phys. Rev. Lett. 102, 257203 (2009), 10.1103/PhysRevLett.102.257203] claims to have detected them, another group reported their observation only after the hydrogenation of the Co adatom [Dubout et al., Phys. Rev. Lett. 114, 106807 (2015), 10.1103/PhysRevLett.114.106807]. Utilizing time-dependent density functional theory in combination with many-body perturbation theory, we demonstrate that, although inelastic spin excitations are possible for Cr, Mn, Fe, and Co adatoms, their efficiency differs. While the excitation signature is less pronounced for Mn and Co adatoms, it is larger for Cr and Fe adatoms. We find that the tunneling matrix elements or the tunneling cross-section related to the nature and symmetry of the relevant electronic states are more favorable for triggering the spin excitations in Fe than in Co. An enhancement of the tunneling and of the inelastic spectra is possible by attaching hydrogen to the adatom at the appropriate position.

  2. Analysis of flight and wind-tunnel tests on Udet airplanes with reference to spinning characteristics

    NASA Technical Reports Server (NTRS)

    Herrmann, H

    1929-01-01

    This report presents an analysis of results of wind-tunnel tests conducted at the D.V.L. Values were determined for the effectiveness of all the controls at various angles of attack. The autorotation was studied by subjecting the rotating model to an air blast.

  3. Spin-transfer switching in full-Heusler Co2FeAl-based magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Sukegawa, Hiroaki; Wen, Zhenchao; Kondou, Kouta; Kasai, Shinya; Mitani, Seiji; Inomata, Koichiro

    2012-04-01

    We demonstrated spin-transfer magnetization switching using magnetic tunnel junctions (MTJs) with a full-Heusler alloy Co2FeAl (CFA). We prepared CFA (1.5 nm)/MgO/CoFe (4 nm) ("CFA-free") and CFA (30 nm)/MgO/CoFeB (2 nm) ("CFA-reference") MTJs on a Cr(001) layer. The intrinsic critical current density (Jc0) of the CFA-free (CFA-reference) MTJ was 29 MA/cm2 (7.1 MA/cm2). The larger Jc0 of the CFA-free MTJ is attributed to the significant enhancement of the Gilbert damping factor (˜0.04) of the CFA due to the Cr layer. The Jc0 of the CFA-reference is as small as that reported for typical CoFeB/MgO/CoFeB MTJs.

  4. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

    PubMed

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-12-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %. PMID:27677304

  5. Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

    PubMed

    Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

    2012-11-01

    Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states. PMID:23421288

  6. Effect of bias voltage on tunneling mechanism in Co40Fe40B20/MgO/Co40Fe40B20 pseudo-spin valve

    NASA Astrophysics Data System (ADS)

    Yıldırım, Mustafa; Öksüzoğlu, Ramis Mustafa

    2015-04-01

    Bias voltage dependence of tunneling mechanism has been systematically investigated in Co40Fe40B20 (2.1 nm)/MgO (2 nm)/Co40Fe40B20 (1.7 nm) pseudo-spin valve magnetic tunnel junction deposited using the combination of the pulsed DC unbalanced magnetron and RF magnetron sputtering techniques. Structural investigations revealed polycrystalline and partially (001) oriented growth of CoFeB/MgO(001) MTJ with similar low interface roughness on both side of the MgO barrier. The junction with a 25×25 μm2 area indicates a giant tunnel magnetoresistance in the order of 505% at room temperature. The magnetoresistance ratio decreases with increasing applied bias voltage ranging from 0.5 to 1.8 V. Reasonable values for barrier thickness and heights were obtained using the combination of Brinkman and Gundlach models, including average barrier height and symmetry. Both barrier parameters and the tunneling mechanism vary in dependence of applied bias voltage. The tunneling mechanism indicates a change from direct to the FN tunneling, especially when reaching high bias voltages. Effect of the tunneling mechanism on the bias dependence of the magnetoresistance was also discussed.

  7. Room-temperature spin-polarized scanning tunneling microscopy of antiferromagnetic Mn3N2(001) nanopyramids

    NASA Astrophysics Data System (ADS)

    Wang, Kangkang; Smith, Arthur

    2012-02-01

    Antiferromagnets play a key role in spintronic applications owing to the exchange bias effect. As devices miniaturize in size and dimension, novel magnetic structures dramatically different from the bulk often emerge. Here we apply spin-polarized scanning tunneling microscopy (SP-STM) at room temperature to study the local magnetization of antiferromagnetic nitride nanostructures. Mn3N2(001) thin films have been grown on MgO(001) substrates using molecular beam epitaxy and transferred in situ to a home-built SP-STM for magnetic imaging. Results show that the surface consists of alternating chemically in-equivalent atomic terraces. Using SP-STM with dI/dV mapping, different layers can be clearly discriminated due to their different conductances. These differences in conductance are a result of not only the different chemical environments, but also the spin ordering and broken symmetry at the surface. Contrary to expectations, a layer-wise alternating surface anisotropy in these nanopyramids is observed. The presented study enables further investigations of the interplay between growth defects and the formation of intriguing antiferromagnetic domains.

  8. Current-induced magnetization switching of a three terminal perpendicular magnetic tunnel junction by spin-orbit torque

    NASA Astrophysics Data System (ADS)

    Cubukcu, Murat; Drouard, Marc; Boulle, Olivier; Garello, Kevin; Miron, Ioan Mihai; Langer, Juergen; Ocker, Berthold; Gambardella, Pietro; Gaudin, Gilles

    2014-03-01

    A current flowing in the plane of a magnetic multilayer with structural inversion asymmetry, such as Pt/Co/AlOx, creates a torque on the magnetization. This torque is due to the strong spin-orbit interaction present in such multilayers and can lead to fast magnetization reversal with a low writing energy.We will present the first proof of concept of a perpendicular spin-orbit torque magnetic random access memory (SOT-MRAM) cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The basic write and read operations, i.e., the magnetization reversal by current injection in the Ta track and its detection using the high TMR signal, are demonstrated. Our results open a path for the development of a novel class of three terminal MRAM combining fast, reliable and low energy writing. This work was supported by the European Commission under the Seventh Framework Program (Grant Agreement 318144, spot project).

  9. Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction

    PubMed Central

    Zhang, Xiangli; Wang, Chengjie; Liu, Yaowen; Zhang, Zongzhi; Jin, Q. Y.; Duan, Chun-Gang

    2016-01-01

    Effective manipulation of magnetization orientation driven by electric field in a perpendicularly magnetized tunnel junction introduces technologically relevant possibility for developing low power magnetic memories. However, the bipolar orientation characteristic of toggle-like magnetization switching possesses intrinsic difficulties for practical applications. By including both the in-plane (T//) and field-like (T⊥) spin-transfer torque terms in the Landau-Lifshitz-Gilbert simulation, reliable and deterministic magnetization reversal can be achieved at a significantly reduced current density of 5×109 A/m2 under the co-action of electric field and spin-polarized current, provided that the electric-field pulse duration exceeds a certain critical value τc. The required critical τc decreases with the increase of T⊥ strength because stronger T⊥ can make the finally stabilized out-of-plane component of magnetization stay in a larger negative value. The power consumption for such kind of deterministic magnetization switching is found to be two orders of magnitude lower than that of the switching driven by current only. PMID:26732287

  10. Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Zhang, Xiangli; Wang, Chengjie; Liu, Yaowen; Zhang, Zongzhi; Jin, Q. Y.; Duan, Chun-Gang

    2016-01-01

    Effective manipulation of magnetization orientation driven by electric field in a perpendicularly magnetized tunnel junction introduces technologically relevant possibility for developing low power magnetic memories. However, the bipolar orientation characteristic of toggle-like magnetization switching possesses intrinsic difficulties for practical applications. By including both the in-plane (T//) and field-like (T⊥) spin-transfer torque terms in the Landau-Lifshitz-Gilbert simulation, reliable and deterministic magnetization reversal can be achieved at a significantly reduced current density of 5×109 A/m2 under the co-action of electric field and spin-polarized current, provided that the electric-field pulse duration exceeds a certain critical value τc. The required critical τc decreases with the increase of T⊥ strength because stronger T⊥ can make the finally stabilized out-of-plane component of magnetization stay in a larger negative value. The power consumption for such kind of deterministic magnetization switching is found to be two orders of magnitude lower than that of the switching driven by current only.

  11. Resonant spin tunneling in randomly oriented nanospheres of Mn12 acetate

    SciTech Connect

    Lendínez, S.; Zarzuela, R.; Tejada, J.; Terban, M. W.; Billinge, S. J. L.; Espin, J.; Imaz, I.; Maspoch, D.; Chudnovsky, E. M.

    2015-01-06

    We report measurements and theoretical analysis of resonant spin tunneling in randomly oriented nanospheres of a molecular magnet. Amorphous nanospheres of Mn₁₂ acetate have been fabricated and characterized by chemical, infrared, TEM, X-ray, and magnetic methods. Magnetic measurements have revealed sharp tunneling peaks in the field derivative of the magnetization that occur at the typical resonant field values for the Mn₁₂ acetate crystal in the field parallel to the easy axis.Theoretical analysis is provided that explains these observations. We argue that resonant spin tunneling in a molecular magnet can be established in a powder sample, without the need for a single crystal and without aligning the easy magnetization axes of the molecules. This is confirmed by re-analyzing the old data on a powdered sample of non-oriented micron-size crystals of Mn₁₂ acetate. In conclusion, our findings can greatly simplify the selection of candidates for quantum spin tunneling among newly synthesized molecular magnets.

  12. First-principles study of spin transport in BN doped CrO2-graphene-CrO2 magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Choudhary, Sudhanshu; Mishra, Pradeep; Goyal, Rohit

    2016-03-01

    We investigate the spin-dependent electronic transport properties of Magnetic tunnel junction (MTJ) consisting of Boron (B) and Nitrogen (N) doped graphene nanosheet sandwiched between two CrO2 half-metallic-ferromagnet (HMF) electrodes. A large value of tunnel magnetoresistance (TMR) and perfect spin filtration was obtained as compared to un-doped graphene MTJ structures reported in past. The use of HMF electrodes further raises the TMR and improves the spin filtration in comparison to MTJs with metallic and ferromagnetic (FM) electrodes, which suggest HMF electrodes as a suitable candidate over metallic and FM electrodes for implementing graphene sheet based MTJs. A high value of TMR ∼100% is obtained at zero bias voltage, which remains constantly high at higher bias voltages in the range of 0 V to 1 V. The higher value of TMR and better (near perfect) spin filtration abilities suggest its usefulness in spin-valves and other spintronics based applications. The spin-dependent non-equilibrium transport is also investigated by analyzing the bias dependent transmission coefficients.

  13. Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings.

    PubMed

    Huang, S M; Tokura, Y; Akimoto, H; Kono, K; Lin, J J; Tarucha, S; Ono, K

    2010-04-01

    We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.

  14. 3. VIEW OF WIND TUNNEL, LOOKING NORTHWEST (1991). WrightPatterson ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. VIEW OF WIND TUNNEL, LOOKING NORTHWEST (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  15. 6. CLOSEUP VIEW OF TENFOOT WIND TUNNEL (1991). WrightPatterson ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. CLOSE-UP VIEW OF TEN-FOOT WIND TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  16. 9. INTERIOR VIEW OF WIND TUNNEL (1991). WrightPatterson Air ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    9. INTERIOR VIEW OF WIND TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  17. 11. INTERIOR VIEW OF WIND TUNNEL (1991). WrightPatterson Air ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    11. INTERIOR VIEW OF WIND TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  18. 10. INTERIOR VIEW OF WIND TUNNEL (1991). WrightPatterson Air ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. INTERIOR VIEW OF WIND TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  19. 8. NORTH VIEW ALONG SIDE OF TUNNEL (1991). WrightPatterson ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    8. NORTH VIEW ALONG SIDE OF TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  20. 7. SOUTH VIEW ALONG SIDE OF TUNNEL (1991). WrightPatterson ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. SOUTH VIEW ALONG SIDE OF TUNNEL (1991). - Wright-Patterson Air Force Base, Area B, Buildings 25 & 24,10-foot & 20-foot Wind Tunnel Complex, Northeast side of block bounded by K, G, Third, & Fifth Streets, Dayton, Montgomery County, OH

  1. Investigation of the Spin and Recovery Characteristics of a 0.057-Scale Model of the Modified Chance Vought XF7U-1 Airplane. TED No. NACA DE 311

    NASA Technical Reports Server (NTRS)

    Berman, Theodore; Pumphrey, Norman E.

    1950-01-01

    An investigation has been conducted in the Langley 20-foot free-spinning tunnel to determine the spin and recovery characteristics of a 0.057-scale model of the modified Chance Vought XF7U-1 airplane. The primary change in the design from that previously tested was a revision of the twin vertical tails. Tests were also made to determine the effect of installation of external wing tanks. The results indicated that the revision in the vertical tails did not greatly alter the spin and recovery characteristics of the model and recovery by normal use of controls (fill rapid rudder reversal followed approximately one-half turn later by movement of the stick forward of neutral) was satisfactory. Adding the external wing tanks to cause the recovery characteristics to become critical and border on an unsatisfactory condition; however, it was shown that satisfactory recovery could be obtained by jettisoning the tanks, followed by normal recovery technique.

  2. Double-decker phthalocyanine complex: Scanning tunneling microscopy study of film formation and spin properties

    NASA Astrophysics Data System (ADS)

    Komeda, Tadahiro; Katoh, Keiichi; Yamashita, Masahiro

    2014-05-01

    We review recent studies of double-decker and triple-decker phthalocyanine (Pc) molecules adsorbed on surfaces in terms of the bonding configuration, electronic structure and spin state. The Pc molecule has been studied extensively in surface science. A Pc molecule can contain various metal atoms at the center, and the class of the molecule is called as metal phthalocyanine (MPc). If the center metal has a large radius, like as lanthanoid metals, it becomes difficult to incorporate the metal atom inside of the Pc ring. Pc ligands are placed so as to sandwich the metal atom, where the metal atom is placed out of the Pc plane. The molecule in this configuration is called as a multilayer-decker Pc molecule. After the finding that the double-decker Pc lanthanoid complex shows single-molecule magnet (SMM) behavior, it has attracted a large attention. This is partly due to a rising interest for the ‘molecular spintronics’, in which the freedoms of spin and charge of an electron are applied to the quantum process of information. SMMs represent a class of compounds in which a single molecule behaves as a magnet. The reported blocking temperature, below which a single SMM molecule works as an quantum magnet, has been increasing with the development in the molecular design and synthesis techniques of multiple-decker Pc complex. However, even the bulk properties of these molecules are promising for the use of electronic materials, the films of multi-decker Pc molecules is less studied than those for the MPc molecules. An intriguing structural property is expected for the multi-decker Pc molecules since the Pc planes are linked by metal atoms. This gives an additional degree of freedom to the rotational angle between the two Pc ligands, and they can make a wheel-like symmetric rotation. Due to a simple and well-defined structure of a multi-decker Pc complex, the molecule can be a model molecule for molecular machine studies. The multi-decker Pc molecules can provide

  3. Entanglement growth and correlation spreading with variable-range interactions in spin and fermionic tunneling models

    NASA Astrophysics Data System (ADS)

    Buyskikh, Anton S.; Fagotti, Maurizio; Schachenmayer, Johannes; Essler, Fabian; Daley, Andrew J.

    2016-05-01

    We investigate the dynamics following a global parameter quench for two one-dimensional models with variable-range power-law interactions: a long-range transverse Ising model, which has recently been realized in chains of trapped ions, and a long-range lattice model for spinless fermions with long-range tunneling. For the transverse Ising model, the spreading of correlations and growth of entanglement are computed using numerical matrix product state techniques, and are compared with exact solutions for the fermionic tunneling model. We identify transitions between regimes with and without an apparent linear light cone for correlations, which correspond closely between the two models. For long-range interactions (in terms of separation distance r , decaying slower than 1 /r ), we find that despite the lack of a light cone, correlations grow slowly as a power law at short times, and that—depending on the structure of the initial state—the growth of entanglement can also be sublinear. These results are understood through analytical calculations, and should be measurable in experiments with trapped ions.

  4. Free-Spinning-Tunnel Tests of a 1/24-Scale Model of the McDonnell XP-88 Airplane with a VEE Tail

    NASA Technical Reports Server (NTRS)

    Berman, Theodore

    1947-01-01

    An investigation of the spin and recovery characteristics of a 1/24-scale model of the McDonnell XP-88 airplane has been conducted in the Langley 20-ft free-spinning tunnel. Results of tests with a conventional tail have been previously reported; the results presented herein are for the model with a vee tail installed. The effects of control settings and movements on the erect and inverted spin and recovery characteristics of the model. In the normal loading were determined. Tests of the model in the long-range loading also were made. The investigation included leading-edge-flap, spin-recovery-parachute, and rudder-pedal-force tests. The recovery characteristics of the model were satisfactory for the normal loading. Deflecting the leading-edge flaps improved recoveries. The results indicated that with the external wing tanks installed (long-range loading) recoveries may be poor and, therefore, if a spin is inadvertently entered in this condition the tanks should be jettisoned if recovery does not appear imminent immediately after it is attempted. A 10-foot spin-recovery tail parachute with a towline 40 feet long and a drag coefficient of 0.63 was found to be effective for spin recovery. The rudder pedal force required for spin recovery was indicated to be within the capabilities of the pilot.

  5. Supplementary Free-Spinning-Tunnel Tests of a 1/16-Scale Model of the McDonnell XB-85 Airplane Equipped with a Conventional-Tail Arrangement

    NASA Technical Reports Server (NTRS)

    Klinar, Walter J.

    1947-01-01

    Spin tests have been conducted in the Langley free-spinning tunnel on a 1/16-scale model of the McDonnell XP-85 airplane with the normal X-tail replaced with a short-coupled conventional tail arrangement. The effect of the conventional tail arrangement and the effects of various modifications upon the spin and recovery characteristics of the model were determined. The results of the tests indicated that installation of the conventional tail arrangement wil not provide satisfactory recoveries from spins of the airplane. Satisfactory recoveries will be obtainable, however, either by installing in addition a very large ventral fin (17.94 sq ft, full-scale) below the tail or by decreasing the width of the fuselage and making it flat sided rearward of the wing trailing edge.

  6. Free-Spinning Wind-Tunnel Tests of a Low-Wing Monoplane with Systematic Changes in Wings and Tails IV : Effect of Center-of-Gravity Location

    NASA Technical Reports Server (NTRS)

    Seidman, Oscar; Neihouse, A I

    1939-01-01

    Eight wings and three tails, covering a wide range of aerodynamic characteristics, were independently ballasted so as to be interchangeable with no change in mass distribution. For each of the 24 resulting wing-tail combinations, observations were made of the steady spin for four control settings and of recoveries for five control manipulations. The results are presented in the form of charts comparing the spin characteristics. The tests are part of a general investigation being made in the NACA free-spinning tunnel to determine the effects of systematic changes in wing and tail arrangement upon the steady-spin and the recovery characteristics of a conventional low-wing monoplane for various load distributions.

  7. Free-Spinning Wind-Tunnel Tests of a Low-Wing Monoplane with Systematic Changes in Wings and Tails V : Effect of Airplane Relative Density

    NASA Technical Reports Server (NTRS)

    Seidman, Oscar; Neihouse, A I

    1940-01-01

    The reported tests are a continuation of an NACA investigation being made in the free-spinning wind tunnel to determine the effects of independent variations in load distribution, wing and tail arrangement, and control disposition on the spin characteristics of airplanes. The standard series of tests was repeated to determine the effect of airplane relative density. Tests were made at values of the relative-density parameter of 6.8, 8.4 (basic), and 12.0; and the results were analyzed. The tested variations in the relative-density parameter may be considered either as variations in the wing loading of an airplane spun at a given altitude, with the radii of gyration kept constant, or as a variation of the altitude at which the spin takes place for a given airplane. The lower values of the relative-density parameter correspond to the lower wing loadings or to the lower altitudes of the spin.

  8. Vertical nano superconducting quantum interference device based on Josepshon tunnel nanojunctions for small spin cluster detection

    NASA Astrophysics Data System (ADS)

    Granata, Carmine; Vettoliere, Antonio; Fretto, Matteo; Leo, Natascia De; Vincenzo, Lacquaniti

    2015-06-01

    The ultra high sensitivity exhibited by Superconducting Quantum Interference Device (SQUIDs) could be the key to explore new field of nanoscience such as the investigation of small cluster of elementary magnetic moments. In this paper, an ultra high sensitive niobium nanoSQUID based on submicron Josephson tunnel junction is presented. It has been fabricated in a vertical configuration by using a three-dimensional focused ion beam sculpting technique. In such a configuration, the nanosensor loop (area of 0.25 μm2) is perpendicular to the substrate plane allowing to drastically reduce the spurious effects of the external magnetic field employed to excite the nano-objects under investigation. Main device characteristics have been measured at T=4.2 K by using a low noise readout electronics. Due to high voltage responsivity, the nanosensor has exhibited a spectral density of the magnetic flux noise as low as 1.6 μΦ0/Hz1/2.

  9. Heat transfer in the spin-boson model: a comparative study in the incoherent tunneling regime.

    PubMed

    Segal, Dvira

    2014-07-01

    We study the transfer of heat in the nonequilibrium spin-boson model with an Ohmic dissipation. In the nonadiabatic limit we derive a formula for the thermal conductance based on a rate equation formalism at the level of the noninteracting blip approximation, valid for temperatures T>T(K), with T(K) as the Kondo temperature. We evaluate this expression analytically assuming either weak or strong couplings, and demonstrate that our results agree with exact relations. Far-from-equilibrium situations are further examined, showing a close correspondence to the linear response limit.

  10. Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions

    SciTech Connect

    Liu, R. S. Meng, H.; Naik, V. B.; Sim, C. H.; Yap, S.; Luo, P.

    2014-12-15

    We studied the spin torque switching in dual MgO layer based magnetic tunnel junctions (MTJs) by incorporating an ultra-thin (0.5 nm) Ta layer at the CoFeB free layer/top MgO layer interface. The Ta incorporated MTJ showed a significant reduction (∼30%) in critical switching current density (J{sub C0} ) as compared to that of the control MTJ whilst maintaining the same tunneling magnetoresistance as well as thermal stability. The reduction of J{sub C0} can be attributed to the perpendicular magnetic anisotropy arising from the incorporation of an ultrathin Ta layer with the MgO|CoFeB structure. This scheme of reducing J{sub C0} without degrading other properties may contribute to the development of spin-transfer-torque magnetic random access memory for low power applications.

  11. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    NASA Astrophysics Data System (ADS)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching.

  12. Instantons and scaling of the transitions rates in Quantum Monte Carlo simulations of thermally-assisted quantum tunneling in spin systems

    NASA Astrophysics Data System (ADS)

    Smelyanskiy, Vadim; Jiang, Zhang; Boixo, Sergio; Issakov, Sergei; Mazzola, Guglielmo; Troyer, Matthias; Neven, Hartmut

    We study analytically and numerically the dynamics of the quantum Monte Carlo (QMC) algorithm to simulate thermally-assisted tunneling in mean-field spin models without conservation of total spin. We use Kramers escape rate theory to calculate the scaling of the QMC time with the problem size to simulate the tunneling transitions. We develop path-integral instanton approach in coherent state and Suzuki-Trotter representations to calculate the escape rate and most probable escape path in QMC dynamics. Analtytical results are in a good agreement with numerical studies. We identify the class of models where the exponent in the scaling of the QMC time is the same as that in physical tunneling but the pre-factor depends very significantly on the QMC path representation. We propose the classes of problems where QMC can fail to simulate tunneling efficiently. The work of GM and MT has been supported by the Swiss National Science Foundation through the National Competence Center in Research QSIT and by ODNI, IARPA via MIT Lincoln Laboratory Air Force Contract No. FA8721-05-C-0002.

  13. Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model- Part II: Verilog-A Model Implementation

    NASA Astrophysics Data System (ADS)

    Chen, Tingsu; Eklund, Anders; Iacocca, Ezio; Rodriguez, Saul; Malm, B. Gunnar; Akerman, Johan; Rusu, Ana

    2015-03-01

    The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various applications. In Part I of this paper, an analytical model based on the macrospin approximation, has been introduced and verified by comparing it with the measurements of three different MTJ STOs. In Part II, the full Verilog-A implementation of the proposed model is presented. To achieve a reliable model, an approach to reproduce the phase noise generated by the MTJ STO has been proposed and successfully employed. The implemented model yields a time domain signal, which retains the characteristics of operating frequency, linewidth, oscillation amplitude and DC operating point, with respect to the magnetic field and applied DC current. The Verilog-A implementation is verified against the analytical model, providing equivalent device characteristics for the full range of biasing conditions. Furthermore, a system that includes an MTJ STO and CMOS RF circuits is simulated to validate the proposed model for system- and circuit-level designs. The simulation results demonstrate that the proposed model opens the possibility to explore STO technology in a wide range of applications.

  14. Wind-tunnel free-flight investigation of a model of a spin-resistant fighter configuration

    NASA Technical Reports Server (NTRS)

    Grafton, S. B.; Chambers, J. R.; Coe, P. L., Jr.

    1974-01-01

    An investigation was conducted to provide some insight into the features affecting the high-angle-of-attack characteristics of a high-performance twin-engine fighter airplane which in operation has exhibited excellent stall characteristics with a general resistance to spinning. Various techniques employed in the study included wind-tunnel free-flight tests, flow-visualization tests, static force tests, and dynamic (forced-oscillation) tests. In addition to tests conducted on the basic configuration tests were made with the wing planform and the fuselage nose modified. The results of the study showed that the model exhibited good dynamic stability characteristics at angles of attack well beyond that for wing stall. The directional stability of the model was provided by the vertical tail at low and moderate angles of attack and by the fuselage forebody at high angles of attack. The wing planform was found to have little effect on the stability characteristics at high angles of attack. The tests also showed that although the fuselage forebody produced beneficial contributions to static directional stability at high angles of attack, it also produced unstable values of damping in yaw. Nose strakes located in a position which eliminated the beneficial nose contributions produced a severe directional divergence.

  15. Nanoscale magnetic characterization of tunneling magnetoresistance spin valve head by electron holography.

    PubMed

    Park, Hyun Soon; Hirata, Kei; Yanagisawa, Keiichi; Ishida, Yoichi; Matsuda, Tsuyoshi; Shindo, Daisuke; Tonomura, Akira

    2012-12-01

    Nanostructured magnetic materials play an important role in increasing miniaturized devices. For the studies of their magnetic properties and behaviors, nanoscale imaging of magnetic field is indispensible. Here, using electron holography, the magnetization distribution of a TMR spin valve head of commercial design is investigated without and with a magnetic field applied. Characterized is the magnetic flux distribution in complex hetero-nanostructures by averaging the phase images and separating their component magnetic vectors and electric potentials. The magnetic flux densities of the NiFe (shield and 5 nm-free layers) and the CoPt (20 nm-bias layer) are estimated to be 1.0 T and 0.9 T, respectively. The changes in the magnetization distribution of the shield, bias, and free layers are visualized in situ for an applied field of 14 kOe. This study demonstrates the promise of electron holography for characterizing the magnetic properties of hetero-interfaces, nanostructures, and catalysts. PMID:22887895

  16. Python Engine Installed in Altitude Wind Tunnel

    NASA Technical Reports Server (NTRS)

    1949-01-01

    An engine mechanic checks instrumentation prior to an investigation of engine operating characteristics and thrust control of a large turboprop engine with counter-rotating propellers under high-altitude flight conditions in the 20-foot-dianieter test section of the Altitude Wind Tunnel at the Lewis Flight Propulsion Laboratory of the National Advisory Committee for Aeronautics, Cleveland, Ohio, now known as the John H. Glenn Research Center at Lewis Field.

  17. An Investigation of the Free-Spinning and Recovery Characteristics of a 1/24-Scale Model of the Grumman F11F-1 Airplane with Alternate Nose Configurations with and without Wing Fuel Tanks, TED No. NACA AD 395

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.

    1958-01-01

    A supplementary investigation has been conducted in the langley 20-foot free-spinning tunnel on a l/24-scale model of the Grumman F11F-1 airplane to determine the spin and recovery characteristics with alternate nose configurations, the production version and the elongated APS-67 version, with and without empty and full wing tanks. When spins were obtained with either alternate nose configuration, they were oscillatory and recovery characteristics were considered unsatisfactory on the basis of the fact that very slow recoveries were indicated to be possible. The simultaneous extension of canards near the nose of the model with rudder reversal was effective in rapidly terminating the spin. The addition of empty wing tanks had little effect on the developed spin and recovery characteristics. The model did not spin erect with full wing tanks. For optimum recovery from inverted spins, the rudder should be reversed to 22O against the spin and simultaneously the flaperons should be moved with the developed spin; the stick should be held at or moved to full forward longitudinally. The minimum size parachute required to insure satisfactory recoveries in an emergency was found to be 12 feet in diameter (laid out flat) with a drag coefficient of 0.64 (based on the laid-out-flat diameter) and a towline length of 32 feet.

  18. Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt] n lower synthetic-antiferromagnetic layer.

    PubMed

    Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2015-11-27

    We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt] n lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H ex) of 1.4 kOe at an ex situ annealing temperature of >350 °C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t bcc), i.e., the TMR ratio peaks at t bcc = 0.6 nm. PMID:26536817

  19. Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt] n lower synthetic-antiferromagnetic layer

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2015-11-01

    We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt] n lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H ex) of 1.4 kOe at an ex situ annealing temperature of >350 °C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t bcc), i.e., the TMR ratio peaks at t bcc = 0.6 nm.

  20. Concluding Report of Free-Spinning, Tumbling, and Recovery Characteristics of a 1/18-Scale Model of the Ryan X-13 Airplane, Coord. No. AF-199

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.

    1957-01-01

    An investigation has been completed in the Langley 20-foot free-spinning tunnel on a l/18-scale model of the Ryan X-13 airplane to determine its spin, recovery, and tumbling characteristics, and to determine the minimum altitude from which a belly landing could be made in case of power failure in hovering flight. Model spin tests were conducted with and without simulated engine rotation. Tests without simulated engine rotation indicated two types of spins: one, a slightly oscillatory flat spin; and the other, a violently oscillatory spin. Tests with simulated engine rotation indicated that spins to the left were fast rotating and steep and those to the right were slow rotating and flat. The optimum technique for recovery is reversal of the rudder to against the spin and simultaneous movement of the ailerons to full with the spin followed by movement of the elevators to neutral after the spin rotation ceases. Tumbling tests made on the model indicated that although the Ryan X-13 airplane will not tumble in the ordinary sense (end-over-end pitching motion), it may instead tend to enter a wild gyrating'motion. Tests made to simulate power failure in hovering flight by dropping the model indicated that the model entered what appeared to be a right spin. An attempt should be made to stop this motion immediately by moving the rudder to oppose the rotation (left pedal), moving the ailerons to with the spin (stick right), and moving the stick forward after the spin rotation ceases to obtain flying speed for pullout. The minimum altitude required for a belly landing in case of power failure in hovering flight was indicated to be about 4,200 feet.

  1. Electrical-field and spin-transfer torque effects in CoFeB/MgO-based perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Yoshida, Chikako; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro; Furuya, Atsushi; Ataka, Tadashi; Tanaka, Tomohiro; Uehara, Yuji

    2016-05-01

    The electric-field (E) dependence of the magnetoresistance (RH) loops for top-pinned perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs) in the presence of a spin-transfer torque (STT)-current was measured. The E effects were distinguished from the STT-current effects using a micromagnetic simulation. The coercive field (Hc) decreased and the RH loop shifted as both the positive and negative bias E increased owing to the STT current. Furthermore, E-assisted switching for an MTJ with a diameter of 20 nm, which exhibited a nearly coherent magnetization reversal, was demonstrated using micromagnetic simulation.

  2. Probing many body effects using Fourier Transform Scanning Tunneling Spectroscopy: Can spin-orbit splitting in dispersion be observed in q-space?

    NASA Astrophysics Data System (ADS)

    Farahi, Gelareh; UBC Labortory for Atomic Imaging Research (LAIR)) Team

    Well studied surface systems such as Ag and Cu provide a safe platform to test novel spectroscopy methods that can have extended applications in near future. Our current focus is given to Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) that allows us to study scattering effects (quasiparticle interactions - namely QPI) of CO and Co on Cu(111) surface. Magnetic Co adatoms are expected to generate a spin-orbit split in dispersion in QPI(q) space, the existence of which is confirmed by the k-space angle-resolved photo-emission spectroscopy (ARPES) of Cu(111) surface in the recent years. Hence the previously observed electron-phonon kink and spin-orbit splitting of the dispersion, as well as the scattering properties of CO molecules and Co adatoms, should also be observable in QPI space via FT-STS of Cu(111), and compatible with previous studies on similar systems. We are using a low temperature (4.2 K) commercial Scanning Tunneling Microscope (CREATEC STM) that operates using Nanonis electronic controllers and software which allows us to perform FT-STS as well as topological imaging.

  3. The 20-Foot View

    ERIC Educational Resources Information Center

    Bull, Glen; Garofalo, Joe

    2006-01-01

    In higher education, the number of computer projectors in classrooms has doubled every year for the past five years. A similar trend in K?12 education is occurring now that capable classroom projectors have become available for less than $1,000. At the same time, large-screen displays are becoming common in society; a trend being acceleration by a…

  4. Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs

    NASA Astrophysics Data System (ADS)

    Nishizawa, N.; Munekata, H.

    2013-07-01

    We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present oxidation method is the formation of the crystalline AlOx template layer without oxidizing the AlGaAs region near the Al/AlGaAs interface. The oxidized Al layer is not amorphous but show well-defined single crystalline feature reminiscent of the spinel γ-AlOx phase. A spin-light emitting diode consisting of a Fe layer, a crystalline AlOx barrier layer, and an AlGaAs-InGaAs double hetero-structure has exhibited circularly polarized electroluminescence with circular polarization of PEL ˜ 0.145 at the remnant magnetization state of the Fe layer, indicating the relatively high spin injection efficiency (≡2PEL/PFe) of 0.63.

  5. Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in Polycrystalline Co2FeAl Full-Heusler-Alloy Magnetic Tunnel Junctions on Amorphous Si /SiO2 Substrates

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, Shinya; Inomata, Koichiro; Mitani, Seiji

    2014-08-01

    We study polycrystalline B2-type Co2FeAl (CFA) full-Heusler-alloy-based magnetic tunnel junctions (MTJs) fabricated on a Si /SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface are achieved by using a MgO buffer layer. A tunnel magnetoresistance ratio up to 175% is obtained for a MTJ with a CFA /MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer-torque-induced magnetization switching is achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. By using a thermal activation model, the intrinsic critical current density (Jc0) is determined to be 8.2×106 A /cm2, which is lower than 2.9×107 A /cm2, the value for epitaxial CFA MTJs [Appl. Phys. Lett. 100, 182403 (2012), 10.1063/1.4710521]. We find that the Gilbert damping constant (α) evaluated by using ferromagnetic resonance measurements for the polycrystalline CFA film is approximately 0.015 and is almost independent of the CFA thickness (2-18 nm). The low Jc0 for the polycrystalline MTJ is mainly attributed to the low α of the CFA layer compared with the value in the epitaxial one (approximately 0.04).

  6. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    PubMed

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  7. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    SciTech Connect

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  8. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  9. Determination of Spin Inversion Probability, H-Tunneling Correction, and Regioselectivity in the Two-State Reactivity of Nonheme Iron(IV)-Oxo Complexes.

    PubMed

    Kwon, Yoon Hye; Mai, Binh Khanh; Lee, Yong-Min; Dhuri, Sunder N; Mandal, Debasish; Cho, Kyung-Bin; Kim, Yongho; Shaik, Sason; Nam, Wonwoo

    2015-04-16

    We show by experiments that nonheme Fe(IV)O species react with cyclohexene to yield selective hydrogen atom transfer (HAT) reactions with virtually no C═C epoxidation. Straightforward DFT calculations reveal, however, that C═C epoxidation on the S = 2 state possesses a low-energy barrier and should contribute substantially to the oxidation of cyclohexene by the nonheme Fe(IV)O species. By modeling the selectivity of this two-site reactivity, we show that an interplay of tunneling and spin inversion probability (SIP) reverses the apparent barriers and prefers exclusive S = 1 HAT over mixed HAT and C═C epoxidation on S = 2. The model enables us to derive a SIP value by combining experimental and theoretical results. PMID:26263154

  10. Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence

    NASA Astrophysics Data System (ADS)

    Meng, Hao; Naik, Vinayak Bharat; Liu, Ruisheng; Han, Guchang

    2014-07-01

    We report an investigation of electric-field (EF) control of spin re-orientation as functions of the thicknesses of CoFeB free layer (FL) and MgO layer in synthetic-antiferromagnetic pinned magnetic tunnel junctions with perpendicular magnetic anisotropy. It is found that the EF modulates the coercivity (Hc) of the FL almost linearly for all FL thicknesses, while the EF efficiency, i.e., the slope of the linearity, increases as the FL thickness increases. This linear variation in Hc is also observed for larger MgO thicknesses (≥1.5 nm), while the EF efficiency increases only slightly from 370 to 410 Oe nm/V when MgO thickness increases from 1.5 to 1.76 nm. We have further observed the absence of quasi-DC unipolar switching. We discuss its origin and highlight the underlying challenges to implement the EF controlled switching in a practical magnetic memory.

  11. Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Buda-Prejbeanu, L. D.; Dieny, B.

    2015-09-01

    The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer torques (STT) in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz-Gilbert (LLG) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency, but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined by the in-plane STT contribution. This conclusion is confirmed by finite temperature and finite writing pulse macrospin simulations of the current field switching diagrams. It contrasts with the case of STT switching in in-plane magnetized magnetic tunnel junction (MTJ) in which the field-like term also influences the switching critical current. This theoretical analysis was successfully applied to the interpretation of voltage field STT switching diagrams experimentally measured on pMTJ pillars 36 nm in diameter, which exhibit macrospin behavior. The physical nonequivalence of Landau and Gilbert dissipation terms in the presence of STT-induced dynamics is also discussed.

  12. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots

    NASA Astrophysics Data System (ADS)

    Nobrega, J. Araújo e.; Gordo, V. Orsi; Galeti, H. V. A.; Gobato, Y. Galvão; Brasil, M. J. S. P.; Taylor, D.; Orlita, M.; Henini, M.

    2015-12-01

    In this work, we have investigated transport and optical properties of n-i-n resonant tunneling diodes (RTDs) containing a layer of InAs self-assembled quantum dots (QDs) grown on a (311)B oriented GaAs substrate. Polarization-resolved photoluminescence (PL) and magneto-transport measurements were performed under applied voltage and magnetic fields up to 15 T at 2 K under linearly polarized laser excitation. It was observed that the QD circular polarization degree depends strongly on the applied voltage. Its voltage dependence is explained by the formation of excitonic complexes such as positively (X+) and negatively (X-) charged excitons in the QDs. Our results demonstrate an effective electrical control of an ensemble of InAs QD properties by tuning the applied voltage across a RTD device into the resonant tunneling condition.

  13. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Mahfouzi, Farzad

    Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains in this respect at present concerns nano-electronics and its diverse applications. The great interest in this domain arises from the potential reduction of the size of the circuit components, maintaining their quality and functionality, and aiming at greater efficiency, economy, and storage characteristics for the corresponding physical devices. The aim of this thesis is to present a contribution to the analysis of the electronic charge and spin transport phenomena that occur at the quantum level in nano-structures. This thesis spans the areas of quantum transport theory through time-dependent systems, electron-boson interacting systems and systems of interest to spintronics. A common thread in the thesis is to develop the theoretical foundations and computational algorithms to numerically simulate such systems. In order to optimize the numerical calculations I resort to different techniques (such as graph theory in finding inverse of a sparse matrix, adaptive grids for integrations and programming languages (e.g., MATLAB and C++) and distributed computing tools (MPI, CUDA). Outline of the Thesis: After giving an introduction to the topics covered in this thesis in Chapter 1, I present the theoretical foundations to the field of non-equilibrium quantum statistics in Chapter 2. The applications of this formalism and the results are covered in the subsequent chapters as follows: Spin and charge quantum pumping in time-dependent systems: Covered in Chapters 3, 4 and 5, this topics was initially motivated by experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single

  14. Realizing the Harper Hamiltonian and Spin-Orbit Coupling with Laser-Assisted Tunneling in an Optical Lattice

    NASA Astrophysics Data System (ADS)

    Kennedy, Colin; Miyake, Hiro; Burton, Cody; Chung, Woo Chang; Siviloglou, Georgios; Ketterle, Wolfgang

    2014-05-01

    The study of charged particles in a magnetic field has led to paradigm shifts in condensed matter physics including the discovery of topologically ordered states like the quantum Hall and fractional quantum Hall states. Quantum simulation of such systems using neutral atoms has drawn much interest recently in the atomic physics community due to the versatility and defect-free nature of such systems. We discuss our recent experimental realization of the Harper Hamiltonian and strong, uniform effective magnetic fields for neutral particles in an optical lattice. Additionally, our scheme represents a promising system to realize spin-orbit coupling and the quantum spin Hall states without flipping atomic spin states and thus without the intrinsic heating that comes with near-resonant Raman lasers. We point out that our scheme can be implemented all optically through the use of a period-tripling superlattice, offering faster switching times and more precise control than with magnetic field gradients. Finally, we show that this method is very general for engineering novel single particle spectra in an optical lattice and can be used to map out Hofstadter's butterfly.

  15. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Mahfouzi, Farzad

    Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains in this respect at present concerns nano-electronics and its diverse applications. The great interest in this domain arises from the potential reduction of the size of the circuit components, maintaining their quality and functionality, and aiming at greater efficiency, economy, and storage characteristics for the corresponding physical devices. The aim of this thesis is to present a contribution to the analysis of the electronic charge and spin transport phenomena that occur at the quantum level in nano-structures. This thesis spans the areas of quantum transport theory through time-dependent systems, electron-boson interacting systems and systems of interest to spintronics. A common thread in the thesis is to develop the theoretical foundations and computational algorithms to numerically simulate such systems. In order to optimize the numerical calculations I resort to different techniques (such as graph theory in finding inverse of a sparse matrix, adaptive grids for integrations and programming languages (e.g., MATLAB and C++) and distributed computing tools (MPI, CUDA). Outline of the Thesis: After giving an introduction to the topics covered in this thesis in Chapter 1, I present the theoretical foundations to the field of non-equilibrium quantum statistics in Chapter 2. The applications of this formalism and the results are covered in the subsequent chapters as follows: Spin and charge quantum pumping in time-dependent systems: Covered in Chapters 3, 4 and 5, this topics was initially motivated by experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single

  16. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2016-08-01

    The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al2O3/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

  17. Spin-Tunnel Investigation of a 1/30-Scale Model of the North American A-5 Airplane

    NASA Technical Reports Server (NTRS)

    Lee, Henry A.

    1964-01-01

    An investigation has been made to determine the erect and. inverted spin and recovery characteristics of a 1/30-scale dynamic model of the North American A-5A airplane. Tests were made for the basic flight design loading with the center of gravity at 30-percent mean aerodynamic chord and also for a forward position and a rearward position with the center of gravity at 26-percent and 40-percent mean aerodynamic chord, respectively. Tests were also made to determine the effect of full external wing tanks on both wings, and of an asymmetrical condition when only one full tank is carried.

  18. Hyperfine-induced hysteretic funnel structure in spin blockaded tunneling current of coupled vertical quantum dots at low magnetic field

    SciTech Connect

    Leary, A.; Wicha, A.; Harack, B.; Coish, W. A.; Hilke, M.; Yu, G.; Gupta, J. A.; Payette, C.; Austing, D. G.

    2013-12-04

    We outline the properties of the hyperfine-induced funnel structure observed in the two-electron spin blockade region of a weakly coupled vertical double quantum dot device. Hysteretic steps in the leakage current occur due to dynamic nuclear polarization when either the bias voltage or the magnetic field is swept up and down. When the bias voltage is swept, an intriguing ∼3 mT wide cusp near 0 T appears in the down-sweep position, and when the magnetic field is swept, the current at 0 T can be switched from 'low' to 'high' as the bias is increased.

  19. Signatures of electron-magnon interaction in charge and spin currents through magnetic tunnel junctions: A nonequilibrium many-body perturbation theory approach

    NASA Astrophysics Data System (ADS)

    Mahfouzi, Farzad; Nikolić, Branislav K.

    2014-07-01

    We develop a numerically exact scheme for resumming certain classes of Feynman diagrams in the self-consistent perturbative expansion for the electron and magnon self-energies in the nonequilibrium Green function formalism applied to a coupled electron-magnon (e-m) system driven out of equilibrium by the applied finite bias voltage. Our scheme operates with the electronic and magnonic GFs and the corresponding self-energies viewed as matrices in the Keldysh space, rather than conventionally extracting their retarded and lesser components, which greatly simplifies translation of diagrams into compact mathematical expressions and their computational implementation. This is employed to understand the effect of inelastic e-m scattering on charge and spin current vs bias voltage Vb in F/I/F (F-ferromagnet; I-insulating barrier) magnetic tunnel junctions (MTJs), which are modeled on a quasi-one-dimensional (quasi-1D) tight-binding lattice for the electronic subsystem and quasi-1D Heisenberg model for the magnonic subsystem. For this purpose, we evaluate the Fock diagram for the electronic self-energy and the electron-hole polarization bubble diagram for the magnonic self-energy. The respective electronic and magnonic GF lines within these diagrams are the fully interacting ones, thereby requiring to solve the ensuing coupled system of nonlinear integral equations self-consistently. Despite using the quasi-1D model and treating e-m interaction in many-body fashion only within a small active region consisting of few lattice sites around the F/I interface, our analysis captures essential features of the so-called zero-bias anomaly observed [V. Drewello, J. Schmalhorst, A. Thomas, and G. Reiss, Phys. Rev. B 77, 014440 (2008), 10.1103/PhysRevB.77.014440] in both MgO- and AlOx-based realistic 3D MTJs where the second derivative d2I /dVb2 (i.e., inelastic electron tunneling spectrum) of charge current exhibits sharp peaks of opposite sign on either side Vb=0. We show that this

  20. Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence

    SciTech Connect

    Meng, Hao; Naik, Vinayak Bharat; Liu, Ruisheng; Han, Guchang

    2014-07-28

    We report an investigation of electric-field (EF) control of spin re-orientation as functions of the thicknesses of CoFeB free layer (FL) and MgO layer in synthetic-antiferromagnetic pinned magnetic tunnel junctions with perpendicular magnetic anisotropy. It is found that the EF modulates the coercivity (Hc) of the FL almost linearly for all FL thicknesses, while the EF efficiency, i.e., the slope of the linearity, increases as the FL thickness increases. This linear variation in Hc is also observed for larger MgO thicknesses (≥1.5 nm), while the EF efficiency increases only slightly from 370 to 410 Oe nm/V when MgO thickness increases from 1.5 to 1.76 nm. We have further observed the absence of quasi-DC unipolar switching. We discuss its origin and highlight the underlying challenges to implement the EF controlled switching in a practical magnetic memory.

  1. Large interfacial exchange fields in a thick superconducting film coupled to a spin-filter tunnel barrier

    NASA Astrophysics Data System (ADS)

    Pal, Avradeep; Blamire, M. G.

    2015-11-01

    The differential conductance of NbN/GdN/TiN superconductor/ferromagnetic insulator/normal-metal junctions, with a thick NbN layer shows a large zero-field voltage offset interpreted as a spin-filtered Zeeman splitting of the NbN density of states by an effective exchange field (H0) from the GdN. The splitting increases linearly, with applied field (Hext) enabling the relative sign of H0 and Hext to be determined. We show that the short NbN coherence length concentrates H0 at the NbN/GdN interface and eliminates any averaging over the GdN domain structure leading to a large zero-field splitting.

  2. Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Reiss, Günter; Schmalhorst, Jan; Thomas, Andre; Hütten, Andreas; Yuasa, Shinji

    In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically. We will cover Al-O and MgO based junctions and present highly spin-polarized electrode materials such as Heusler alloys. Furthermore, we will give a short overview on applications such as read heads in hard disk drives, storage cells in MRAMs, field programmable logic circuits and biochips. Finally, we will discuss the currently growing field of current induced magnetization switching.

  3. Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact

    SciTech Connect

    Kawame, Yu Akushichi, Taiju; Shuto, Yusuke; Sugahara, Satoshi; Takamura, Yota

    2015-05-07

    We successfully fabricate a (100)-orientated B2-type-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5} (CFSA)/MgO/Si(100) tunnel contact that is promising for an efficient spin injector for Si channels. The MgO barrier is formed by radical oxidation of an Mg thin film deposited on a Si(100) surface at room temperature and successive radical oxygen annealing at 400 °C. The CFSA electrode is grown on the MgO barrier at 400 °C by ultrahigh-vacuum molecular beam deposition, and it exhibits a (100)-orientated columnar polycrystalline structure with a high degree (63%) of B2-order. The MgO barrier near the interface of the CFSA/MgO junction is crystallized with the (100) orientation, i.e., the spin filter effect due to the MgO barrier could be expected for this junction. A three-terminal Si-channel spin-accumulation device with a CFSA/MgO/Si(100) spin injector is fabricated, and the Hanle effect of accumulated spin polarized electrons injected from this contact to the Si channel is observed.

  4. Wind-tunnel investigation of the descent characteristics of bodies of revolution simulating anti-personnel bombs

    NASA Technical Reports Server (NTRS)

    Sher, S. H.

    1951-01-01

    An investigation has been conducted in the Langley 20-foot free spinning tunnel to study the relative behavior in descent of a number of homogeneous balsa bodies of revolution simulating anti-personnel bombs with a small cylindrical exploding device suspended approximately 10 feet below the bomb. The bodies of revolution included hemispherical, near-hemispherical, and near-paraboloid shapes. The ordinates of one near-paraboloid shape were specified by the Office of the Chief of Ordnance, U. S. Army. The behavior of the various bodies without the cylinder was also investigated. The results of the investigation indicated that several of the bodies descended vertically with their longitudinal axis, suspension line, and small cylinder in a vertical attitude,. However, the body, the ordinates of which had been specified by the Office of the Chief of Ordnance, U. S. Army, oscillated considerably from a vertical attitude while descending and therefore appeared unsuitable for its intended use. The behavior of this body became satisfactory when its center of gravity was moved well forward from its original position. In general, the results indicated that the descent characteristics of the bodies of revolution become more favorable as their shapes approached that of a hemisphere.

  5. Dirac and scalar particles tunnelling from topological massive warped-AdS3 black hole

    NASA Astrophysics Data System (ADS)

    Gecim, G.; Sucu, Y.

    2015-06-01

    We investigate the Dirac and scalar particles tunnelling as a radiation of Warped AdS3 black holes in Topological Massive Gravity. Using Hamilton-Jacobi method, we discuss tunnelling probability and Hawking temperature of the spin-1/2 and spin-0 particles for the black hole. We observe the tunnelling probability and Hawking temperature to be same for the spin-1/2 and spin-0. We show that the tunnelling process may occur, for both Dirac and scalar particles.

  6. Wind-tunnel Tests of a Cyclogiro Rotor

    NASA Technical Reports Server (NTRS)

    Wheatley, John B; Windler, Ray

    1935-01-01

    During an extensive study of all types of rotating wings, the NACA examined the cyclogiro rotor and made an aerodynamic analysis of that system (reference 1). The examination disclosed that such a machine had sufficient promise to justify an experimental investigation; a model with a diameter and span of 8 feet was therefore constructed and tested in the 20-foot wind tunnel during 1934. The experimental work included tests of the effect of the motion upon the rotor forces during the static-lift and forward-flight conditions at several rotor speeds and the determination of the relations between the forces generated by the rotor and the power required by it.

  7. Effect of stripe height on the critical current density of spin-torque noise in a tunneling magnetoresistive read head with a low resistance area product below 1.0 Ω μm{sup 2}

    SciTech Connect

    Endo, Yasushi Fan, Peng; Yamaguchi, Masahiro

    2015-05-07

    To understand the spin-torque effect on the noise in tunneling magnetoresistive (TMR) read heads, the GHz range noise spectra of TMR read heads with a narrow track width (w = 36 nm), and various stripe heights (h) are investigated as a function of the external magnetic field (H{sub ex}) and dc bias current density (j). The strong noise peak intensity depends on both H{sub ex} and j, indicating that the spin-torque affects the thermal mag-noise under a positive (negative) j for a positive (negative) H{sub ex}, regardless of h in the TMR heads. Due to the increased shape anisotropy, the critical current density (j{sub c}), where the non-thermal fluctuation noise originates from the spin-torque, increases markedly as the head dimension is reduced, and the maximum value of j{sub c} is approximately +1.5 × 10{sup 12} A/m{sup 2} for a head with w = 36 nm and h = 15 nm. These results demonstrate that the non-thermal fluctuation noise originating from the spin-torque in the TMR head can be suppressed in the current density range below 10{sup 12} A/m{sup 2}, as the head dimension is reduced and the shape anisotropy is increased.

  8. Spin-tunnel investigation of a 1/13-scale model of the NASA AD-1 oblique-wing research aircraft

    NASA Technical Reports Server (NTRS)

    White, W. L.; Bowman, J. S., Jr.

    1982-01-01

    The spin and recovery characteristics of a 1/13-scale model of the NASA AD-1 oblique-wing research aircraft at wing-skew positions of 0, 25, 45, and 60 deg (right wing forward) were investigated. Spins were obtained for all wing-skew positions tested. For the unskewed wing position, two spin modes were possible. One spin mode was very steep and recoveries were obtained within 1 turn or less by rudder reversal. The second spin mode was flat and fast; the angle of attack was about 75 deg and the spin rate was about 145 deg/sec (2.5 seconds per turn). For the skewed wing positions, spins were obtained only in the direction of the forward-skewed wing (right wing forward). No spins were obtained to the left when the wing was skewed with the right wing forward. Recoveries should be attempted by deflecting the rudder to full against the spin, the ailerons to full with the spin, and movement of the wings to 0 deg skew. If the wing is skewed, the recovery may not be effected until the wing skew approaches 0 deg.

  9. Spin transport and accumulation in n{sup +}-Si using Heusler compound Co{sub 2}FeSi/MgO tunnel contacts

    SciTech Connect

    Ishikawa, Mizue Sugiyama, Hideyuki; Inokuchi, Tomoaki; Saito, Yoshiaki; Hamaya, Kohei

    2015-08-31

    We investigate spin transport and accumulation in n{sup +}-Si using Heusler compound Co{sub 2}FeSi/MgO/Si on insulator (SOI) devices. The magnitudes of the non-local four- and three-terminal Hanle effect signals when using Heusler compound Co{sub 2}FeSi/MgO/SOI devices are larger than when using CoFe/MgO/SOI devices, whereas the preparation methods of MgO layers on SOI are exactly same in both devices. Different bias voltage dependencies on the magnitude of spin accumulation signals are also observed between these devices. Especially, Co{sub 2}FeSi/MgO/SOI devices show large spin accumulation signals compared with CoFe/MgO/SOI devices in the low bias voltage region less than ∼1000 mV in which the increase of the spin polarization is expected from the estimation of the density of states in Heusler compound Co{sub 2}FeSi and CoFe under spin extraction conditions. These results indicate that the species of ferromagnetic material definitely affects the magnitude and behavior of the spin signals. The use of highly polarized ferromagnets such as Heusler compounds would be important for improving the spin polarization and the magnitude of spin signals through Si channels.

  10. Investigation of the Model ME 210 in the Spin Wind Tunnel of the DVL. Report 4; Model with Long Fuselage and with a VEE Tail

    NASA Technical Reports Server (NTRS)

    Huffschmid, A

    1950-01-01

    After conclusion of the spin investigation of the model Me 210 with elongated fuselage and central vertical tail surfaces (model condition III; reference 3), tests were performed on the same model with a vee tail (model condition IV). Here the entire tail surfaces consist of only one surface with pronounced dihedral. Since the blanketing of the vertical tail surfaces by the horizontal tail surfaces, which may occur in case of standard tail surfaces, does not occur here, one could expect for this type of tail surface favorable spin characteristics, particularly with respect to rudder effectiveness for spin recovery. However, the test results did not confirm these expectations. The steady spin was shown to be very irregular; regarding rudder effectiveness the vee tail surfaces proved to be inferior even to standard tail surfaces, thus they represent the most unfavorable of the four fuselage and tail-surface combinations investigated so far.

  11. Free-Spinning and Recovery Characteristics of a 1/19-Scale Model of the North American T-28C Airplane, TED No. NACA AD 3127

    NASA Technical Reports Server (NTRS)

    Bowman, James S., Jr.

    1956-01-01

    An investigation has been conducted in the Langley 20-foot free-spinning tunnel on a l/19-scale model of the North American T-28C airplane to determine the spin and recovery characteristics. The T-28C airplane is similar to the T-28B airplane except for slight modifications for the arresting hook. The lower rear section of the fuselage was cut out and, consequently, the lower part of the rudder was removed to make a smooth fairing with the fuselage. The T-28B airplane had good recovery characteristics; but these modifications, along with the addition of gun packages on the wings, led to poor and unsatisfactory spin-recovery characteristics during demonstration spins of the T-28C airplane. Model test results indicated that without the gun packages installed, satisfactory recoveries could be obtained if the elevators were held full back while the rudder was fully reversed and the ailerons were held neutral. However, with the addition of gun packages to the wings and the corresponding change in loading, recoveries were considered unsatisfactory. Recoveries attempted by using a larger chord or larger span rudder were improved very slightly, but were still considered marginal or unsatisfactory. Strakes placed on the nose of the model were effective in slowing the spin rotation slightly and, in most instances, decreased the turns for recovery slightly. Recovery characteristics were slightly marginal for the full fuel loading when strakes and the extended-chord rudder were installed; but with the wing fuel partly used, recovery characteristics were again considered unsatisfactory or, at least, definitely on the marginal side. The optimum control technique for recovery is movement of the rudder to full against the spin with the stick held full back (elevators full up) and the ailerons held neutral, followed by forward movement of the stick only after the spin rotation ceases. Inverted-spin test results indicate that the airplane will spin steep and fast and that recovery

  12. Rockets for spin recovery

    NASA Technical Reports Server (NTRS)

    Whipple, R. D.

    1980-01-01

    The potential effectiveness of rockets as an auxiliary means for an aircraft to effect recovery from spins was investigated. The advances in rocket technology produced by the space effort suggested that currently available systems might obviate many of the problems encountered in earlier rocket systems. A modern fighter configuration known to exhibit a flat spin mode was selected. An analytical study was made of the thrust requirements for a rocket spin recovery system for the subject configuration. These results were then applied to a preliminary systems study of rocket components appropriate to the problem. Subsequent spin tunnel tests were run to evaluate the analytical results.

  13. Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n{sup +}-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy

    SciTech Connect

    Inokuchi, Tomoaki Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi; Saito, Yoshiaki

    2014-12-08

    Spin-dependent transport properties in CoFe/MgO/n{sup +}-Si junctions were investigated by Hanle effect measurements and inelastic electron tunneling (IET) spectroscopy. The CoFe/MgO/n{sup +}-Si junctions examined in this study exhibited two different Hanle curves. In the low bias region, broad Hanle signals were mainly observed; in the high bias region, narrow Hanle signals were mainly observed. The d{sup 2}I/dV{sup 2}-V curves (which correspond to IET spectra) contain several peaks originating from phonon modes and other peaks originating from electron trap states. At the bias voltage where electron trap states are observed, Δd{sup 2}I/dV{sup 2} depends on the magnetic field and the full width at half-maximum of the Δd{sup 2}I/dV{sup 2}–H curves corresponds to that of the broad Hanle signals. These results indicate that electron trap states are located in the low energy region and cause a decrease in spin lifetime.

  14. Spin polarization of the split Kondo state.

    PubMed

    von Bergmann, Kirsten; Ternes, Markus; Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

    2015-02-20

    Spin-resolved scanning tunneling microscopy is employed to quantitatively determine the spin polarization of the magnetic field-split Kondo state. Tunneling conductance spectra of a Kondo-screened magnetic atom are evaluated within a simple model taking into account inelastic tunneling due to spin excitations and two Kondo peaks positioned symmetrically around the Fermi energy. We fit the spin state of the Kondo-screened atom with a spin Hamiltonian independent of the Kondo effect and account for Zeeman splitting of the Kondo peak in the magnetic field. We find that the width and the height of the Kondo peaks scales with the Zeeman energy. Our observations are consistent with full spin polarization of the Kondo peaks, i.e., a majority spin peak below the Fermi energy and a minority spin peak above. PMID:25763966

  15. Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions.

    PubMed

    Yamamoto, Masafumi; Ishikawa, Takayuki; Taira, Tomoyuki; Li, Gui-fang; Matsuda, Ken-ichi; Uemura, Tetsuya

    2010-04-28

    Fully epitaxial magnetic tunnel junctions (MTJs) with Co-based Heusler alloy Co(2)MnSi electrodes and a MgO tunnel barrier were fabricated with various values of Mn composition α for Co(2)Mn(α)Si in Co(2)Mn(α)Si/MgO/Co(2)Mn(α)Si MTJs. The tunnel magnetoresistance (TMR) ratios at both 4.2 K and room temperature (RT) increased systematically with increasing α in Co(2)Mn(α)Si electrodes from Mn-deficient compositions (α < 1) up to a certain Mn-rich composition (α > 1), demonstrating high TMR ratios of 1135% at 4.2 K and 236% at RT for MTJs with Mn-rich Co(2)Mn(α)Si electrodes with α = 1.29. Identically fabricated Co(2)Mn(β)Ge(δ)/MgO/Co(2)Mn(β)Ge(δ) (δ = 0.38) MTJs showed similar dependence of the TMR ratio on Mn composition β, demonstrating relatively high TMR ratios of 650% at 4.2 K and 220% at RT for β = 1.40. The Mn composition dependence of the TMR ratio at both 4.2 K and RT observed commonly for both Co(2)MnSi/MgO/Co(2)MnSi and Co(2)MnGe/MgO/Co(2)MnGe MTJs can be attributed to suppressed minority-spin in-gap states around the Fermi level for Mn-rich Co(2)MnSi and Co(2)MnGe electrodes.

  16. Impurity-assisted tunneling magnetoresistance under a weak magnetic field.

    PubMed

    Txoperena, Oihana; Song, Yang; Qing, Lan; Gobbi, Marco; Hueso, Luis E; Dery, Hanan; Casanova, Fèlix

    2014-10-01

    Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect reflects on-off switching of the tunneling current through impurity channels by the external magnetic field. The reported effect is universal for any impurity-assisted tunneling process and provides an alternative interpretation to a widely used technique that employs the same ferromagnetic electrode to inject and detect spin accumulation. PMID:25325651

  17. High Magnetoresistance in Fully Epitaxial Magnetic Tunnel Junctions with a Semiconducting GaOx Tunnel Barrier

    NASA Astrophysics Data System (ADS)

    Matsuo, Norihiro; Doko, Naoki; Takada, Tetsuro; Saito, Hidekazu; Yuasa, Shinji

    2016-09-01

    We fabricate magnetic tunnel junctions with fully epitaxial Fe (001 )/GaOx(001 )/Fe (001 ) structure, where the GaOx is a wide band-gap semiconductor with a cubic spinel-type crystal structure. Tunneling magnetoresistance ratios up to 92% (125%) are observed at room temperature (20 K), which evidently indicates the existence of a spin-polarized coherent tunneling. The observed MR ratio is the highest among the reported magnetic tunnel junctions with a semiconducting tunnel barrier and ferromagnetic metal electrodes. Such a single-crystalline semiconductor tunnel barrier that shows a high MR ratio is an essential building block for a vertical-type spin field-effect transistor.

  18. Wind-Tunnel Tests of 10-foot-diameter Autogiro Rotors

    NASA Technical Reports Server (NTRS)

    Wheatley, John B; Bioletti, Carlton

    1937-01-01

    Report presents the results of a series of 10-foot-diameter autogiro rotor models tested in the NACA 20-foot wind tunnel. Four of the models differed only in the airfoil sections of the blades, the sections used being the NACA 0012, 0018, 4412, and 4418. Three additional models employing the NACA 0012 section were tested, in which a varying portion of the blade near the hub was replaced by a streamline tube with a chord of about one-fourth the blade chord.

  19. Tunnel magnetoresistance of diamondoids

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2016-10-01

    Tunnel magnetoresistance (TMR) of diamondoids has been predicted by first principles density functional theory. Diamantane was used as a basic molecular proxy for diamondoids because hydrogen atoms in the apical position are easily substituted for a thiol group. The pristine diamantane exhibited a low TMR ratio of 7%, and boron-substitution considerably decreased the TMR ratio. Conversely, nitrogen-substitution enhanced the TMR ratio by up to 20%. Heteroatom-substitution changes the tunneling probabilities by varying the molecular bond lengths. Furthermore, when the spins of the electrodes are parallel, the heteroatoms resulted in transmittance probabilities at an energy range near the Fermi level. Consequently, heteroatom-substitution can control the TMR ratios of diamondoids very well.

  20. On tunneling across horizons

    NASA Astrophysics Data System (ADS)

    Vanzo, L.

    2011-07-01

    The tunneling method for stationary black holes in the Hamilton-Jacobi variant is reconsidered in the light of some critiques that have been moved against. It is shown that once the tunneling trajectories have been correctly identified the method is free from internal inconsistencies, it is manifestly covariant, it allows for the extension to spinning particles and it can even be used without solving the Hamilton-Jacobi equation. These conclusions borrow support on a simple analytic continuation of the classical action of a pointlike particle, made possible by the unique assumption that it should be analytic in the complexified Schwarzschild or Kerr-Newman space-time. A more general version of the Parikh-Wilczek method will also be proposed along these lines.

  1. Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer

    NASA Astrophysics Data System (ADS)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Chae, Kyo-Suk; Shim, Tae-Hun; Lian, Guoda; Kim, moon; Park, Jea-Gun

    2015-05-01

    The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (Tex) was increased from 275 to 325 °C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 °C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd]n-SyAF, abruptly reducing the Δ1 coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.

  2. Tunnelling of relativistic particles from new type black hole in new massive gravity

    SciTech Connect

    Gecim, Ganim; Sucu, Yusuf E-mail: ysucu@akdeniz.edu.tr

    2013-02-01

    In the framework of the three dimensional New Massive Gravity theory introduced by Bergshoeff, Hohm and Townsend, we analyze the behavior of relativistic spin-1/2 and spin-0 particles in the New-type Black Hole backgroud, solution of the New Massive Gravity.We solve Dirac equation for spin-1/2 and Klein-Gordon equation for spin-0. Using Hamilton-Jacobi method, we discuss tunnelling probability and Hawking temperature of the spin-1/2 and spin-0 particles for the black hole. We observe that the tunnelling probability and Hawking temperature are same for the spin-1/2 and spin-0.

  3. First results for custom-built low-temperature (4.2 K) scanning tunneling microscope/molecular beam epitaxy and pulsed laser epitaxy system designed for spin-polarized measurements

    NASA Astrophysics Data System (ADS)

    Foley, Andrew; Alam, Khan; Lin, Wenzhi; Wang, Kangkang; Chinchore, Abhijit; Corbett, Joseph; Savage, Alan; Chen, Tianjiao; Shi, Meng; Pak, Jeongihm; Smith, Arthur

    2014-03-01

    A custom low-temperature (4.2 K) scanning tunneling microscope system has been developed which is combined directly with a custom molecular beam epitaxy facility (and also including pulsed laser epitaxy) for the purpose of studying surface nanomagnetism of complex spintronic materials down to the atomic scale. For purposes of carrying out spin-polarized STM measurements, the microscope is built into a split-coil, 4.5 Tesla superconducting magnet system where the magnetic field can be applied normal to the sample surface; since, as a result, the microscope does not include eddy current damping, vibration isolation is achieved using a unique combination of two stages of pneumatic isolators along with an acoustical noise shield, in addition to the use of a highly stable as well as modular `Pan'-style STM design with a high Q factor. First 4.2 K results reveal, with clear atomic resolution, various reconstructions on wurtzite GaN c-plane surfaces grown by MBE, including the c(6x12) on N-polar GaN(0001). Details of the system design and functionality will be presented.

  4. Recognition Tunneling

    PubMed Central

    Lindsay, Stuart; He, Jin; Sankey, Otto; Hapala, Prokop; Jelinek, Pavel; Zhang, Peiming; Chang, Shuai; Huang, Shuo

    2010-01-01

    Single molecules in a tunnel junction can now be interrogated reliably using chemically-functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode (“tethered molecule-pair” configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the “free analyte” configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. PMID:20522930

  5. 7 x 10-Foot Atmospheric Wind Tunnel (AWT)

    NASA Technical Reports Server (NTRS)

    1934-01-01

    Smoke generator for 7 x 10-Foot Atmospheric Wind Tunnel (AWT) (left center); Force Test Set-Up in the center. In 1928, the NACA decided to replace its original Atmospheric Wind Tunnel (AWT #1) with two tunnels--the 5-foot vertical tunnel and a 7 by 10 foot rectangular throat tunnel. Both were open-throat, closed-return-passage tunnels. While the 5-foot vertical tunnel was to be used mainly for spin tests, the 7x10 was an all-purpose tunnel although the main intent was to study stability and control problems. Construction was completed in the summer of 1930; calibration later that same year. The balance was installed and the tunnel went into operation in early 1931.

  6. Supramolecular spin valves

    NASA Astrophysics Data System (ADS)

    Urdampilleta, M.; Klyatskaya, S.; Cleuziou, J.-P.; Ruben, M.; Wernsdorfer, W.

    2011-07-01

    Magnetic molecules are potential building blocks for the design of spintronic devices. Moreover, molecular materials enable the combination of bottom-up processing techniques, for example with conventional top-down nanofabrication. The development of solid-state spintronic devices based on the giant magnetoresistance, tunnel magnetoresistance and spin-valve effects has revolutionized magnetic memory applications. Recently, a significant improvement of the spin-relaxation time has been observed in organic semiconductor tunnel junctions, single non-magnetic molecules coupled to magnetic electrodes have shown giant magnetoresistance and hybrid devices exploiting the quantum tunnelling properties of single-molecule magnets have been proposed. Herein, we present an original spin-valve device in which a non-magnetic molecular quantum dot, made of a single-walled carbon nanotube contacted with non-magnetic electrodes, is laterally coupled through supramolecular interactions to TbPc2 single-molecule magnets (Pc=phthalocyanine). Their localized magnetic moments lead to a magnetic field dependence of the electrical transport through the single-walled carbon nanotube, resulting in magnetoresistance ratios up to 300% at temperatures less than 1 K. We thus demonstrate the functionality of a supramolecular spin valve without magnetic leads. Our results open up prospects of new spintronic devices with quantum properties.

  7. Supramolecular spin valves.

    PubMed

    Urdampilleta, M; Klyatskaya, S; Cleuziou, J-P; Ruben, M; Wernsdorfer, W

    2011-07-01

    Magnetic molecules are potential building blocks for the design of spintronic devices. Moreover, molecular materials enable the combination of bottom-up processing techniques, for example with conventional top-down nanofabrication. The development of solid-state spintronic devices based on the giant magnetoresistance, tunnel magnetoresistance and spin-valve effects has revolutionized magnetic memory applications. Recently, a significant improvement of the spin-relaxation time has been observed in organic semiconductor tunnel junctions, single non-magnetic molecules coupled to magnetic electrodes have shown giant magnetoresistance and hybrid devices exploiting the quantum tunnelling properties of single-molecule magnets have been proposed. Herein, we present an original spin-valve device in which a non-magnetic molecular quantum dot, made of a single-walled carbon nanotube contacted with non-magnetic electrodes, is laterally coupled through supramolecular interactions to TbPc(2) single-molecule magnets (Pc=phthalocyanine). Their localized magnetic moments lead to a magnetic field dependence of the electrical transport through the single-walled carbon nanotube, resulting in magnetoresistance ratios up to 300% at temperatures less than 1 K. We thus demonstrate the functionality of a supramolecular spin valve without magnetic leads. Our results open up prospects of new spintronic devices with quantum properties. PMID:21685902

  8. The interfacial and surface properties of thin Fe and Gd films grown on W(110) as studied by scanning tunneling microscopy, site-resolved photoelectron diffraction, and spin polarized photoelectron diffraction

    SciTech Connect

    Tober, E.D.

    1997-06-01

    Combined scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) measurements from Gd films grown on W(110) prepared with and without annealing have been used to provide a detailed picture of the growth of such films, permitting a quantitative structural explanation for previously-measured magnetic properties and the identification of a new two-dimensional structure for the first monolayer. The analysis of the film roughness of room-temperature-grown films as a function of coverage and lateral length scale reveals that the growing Gd surface follows scaling laws for a self-affine surface. Annealing these as-deposited films at elevated temperatures is found to drastically alter the morphology of the films, as seen by both STM and LEED. Nanometer-scale islands of relatively well-defined size and shape are observed under certain conditions. Finally, the first monolayer of Gd is observed to form a (7x14) superstructure with pseudo-(7x7) symmetry that is consistent with a minimally-distorted hexagonal two-dimensional Gd(0001) film. Furthermore, a new beamline and photoelectron spectrometer/diffractometer at the Advanced Light Source have been used to obtain full-solid-angle and site-specific photoelectron diffraction (PD) data from interface W atoms just beneath (1x1) Fe and (7x14) Gd monolayers on W(110) by utilizing the core level shift in the W 4f{sub 7/2} spectrum. A comparison of experiment with multiple scattering calculations permits determining the Fe adsorption site and the relative interlayer spacing to the first and second W layers. These Fe results are also compared to those from the very different Gd overlayer and from the clean W(110) surface. Such interface PD measurements show considerable promise for future studies. Finally, the rare-earth ferromagnetic system of Gd(0001) has been examined through the use of spin polarized photoelectron diffraction from the Gd 4s and 5s photoelectron multiplets.

  9. Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions.

    PubMed

    Cobas, Enrique; Friedman, Adam L; Van't Erve, Olaf M J; Robinson, Jeremy T; Jonker, Berend T

    2012-06-13

    Graphene has been widely studied for its high in-plane charge carrier mobility and long spin diffusion lengths. In contrast, the out-of-plane charge and spin transport behavior of this atomically thin material have not been well addressed. We show here that while graphene exhibits metallic conductivity in-plane, it serves effectively as an insulator for transport perpendicular to the plane. We report fabrication of tunnel junctions using single-layer graphene between two ferromagnetic metal layers in a fully scalable photolithographic process. The transport occurs by quantum tunneling perpendicular to the graphene plane and preserves a net spin polarization of the current from the contact so that the structures exhibit tunneling magnetoresistance to 425 K. These results demonstrate that graphene can function as an effective tunnel barrier for both charge and spin-based devices and enable realization of more complex graphene-based devices for highly functional nanoscale circuits, such as tunnel transistors, nonvolatile magnetic memory, and reprogrammable spin logic.

  10. 7 x 10 Foot Atmospheric Wind Tunnel (AWT)

    NASA Technical Reports Server (NTRS)

    1930-01-01

    Construction of 7 x 10 Foot Atmospheric Wind Tunnel (AWT). In 1928, the NACA decided to replace its original Atmospheric Wind Tunnel (AWT #1) with two tunnels--the 5-foot vertical tunnel and a 7 by 10 foot rectangular throat tunnel. Both were open-throat, closed-return-passage tunnels. While the 5 foot vertical tunnel was to be used mainly for spin tests, the 7x10 was an all-purpose tunnel although the main intent was to study stability and control problems. Construction was completed in the summer of 1930; calibration later that same year. The balance was installed and the tunnel went into operation in early 1931. The Warwick Machine Co. of Newport News, Virginia had the contract to fabricate and erection the 7x10 Foot tunnel for a total cost of $18,018.90. The balance was made by Fairbanks, Morse and Co., of Baltimore, Maryland for $2,544.00. The honeycomb was made by the Berkley Machine Works and Foundry Co., Inc. of Norfolk, Virginia for $1,580 and the control panel by Clark Controller Co. of Cleveland, OH for $1,153. Published in NACA TR No. 412, 'The 7 by 10 Foot Wind Tunnel of the National Advisory Committee for Aeronautics,' by Thomas A. Harris, 1932; Reference Notes on the 'Atmospheric Wind Tunnel' in the Langley Historical Archives (D. Baals notes on wind tunnels).

  11. Spin foams without spins

    NASA Astrophysics Data System (ADS)

    Hnybida, Jeff

    2016-10-01

    We formulate the spin foam representation of discrete SU(2) gauge theory as a product of vertex amplitudes each of which is the spin network generating function of the boundary graph dual to the vertex. In doing so the sums over spins have been carried out. The boundary data of each n-valent node is explicitly reduced with respect to the local gauge invariance and has a manifest geometrical interpretation as a framed polyhedron of fixed total area. Ultimately, sums over spins are traded for contour integrals over simple poles and recoupling theory is avoided using generating functions.

  12. Electric field modulation of tunneling anisotropic magnetoresistance in tunnel junctions with antiferromagnetic electrodes

    NASA Astrophysics Data System (ADS)

    Goto, Minori; Nawaoka, Kohei; Miwa, Shinji; Hatanaka, Shohei; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-08-01

    We present electric field modulation of tunneling anisotropic magnetoresistance (TAMR) in MnIr|MgO|Ta tunnel junctions. TAMR enables direct observation of the antiferromagnetic spin direction at the MnIr|MgO interface. We found that the shape of magnetoresistance (MR) curve can be modulated by an electric field, which can be explained by electric field modulation of the interfacial magnetic anisotropy at MnIr|MgO.

  13. Videogrammetric Model Deformation Measurement Technique for Wind Tunnel Applications

    NASA Technical Reports Server (NTRS)

    Barrows, Danny A.

    2006-01-01

    Videogrammetric measurement technique developments at NASA Langley were driven largely by the need to quantify model deformation at the National Transonic Facility (NTF). This paper summarizes recent wind tunnel applications and issues at the NTF and other NASA Langley facilities including the Transonic Dynamics Tunnel, 31-Inch Mach 10 Tunnel, 8-Ft high Temperature Tunnel, and the 20-Ft Vertical Spin Tunnel. In addition, several adaptations of wind tunnel techniques to non-wind tunnel applications are summarized. These applications include wing deformation measurements on vehicles in flight, determining aerodynamic loads based on optical elastic deformation measurements, measurements on ultra-lightweight and inflatable space structures, and the use of an object-to-image plane scaling technique to support NASA s Space Exploration program.

  14. Superpoissonian shot noise in organic magnetic tunnel junctions

    SciTech Connect

    Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G.; Hong, Jhen-Yong; Lin, Minn-Tsong; Szczepański, Tomasz; Dugaev, Vitalii K.; Barnaś, Józef

    2014-12-08

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  15. Tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions.

    PubMed

    Liu, R S; Michalak, L; Canali, C M; Samuelson, L; Pettersson, H

    2008-03-01

    We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer. PMID:18254603

  16. Probing absolute spin polarization at the nanoscale.

    PubMed

    Eltschka, Matthias; Jäck, Berthold; Assig, Maximilian; Kondrashov, Oleg V; Skvortsov, Mikhail A; Etzkorn, Markus; Ast, Christian R; Kern, Klaus

    2014-12-10

    Probing absolute values of spin polarization at the nanoscale offers insight into the fundamental mechanisms of spin-dependent transport. Employing the Zeeman splitting in superconducting tips (Meservey-Tedrow-Fulde effect), we introduce a novel spin-polarized scanning tunneling microscopy that combines the probing capability of the absolute values of spin polarization with precise control at the atomic scale. We utilize our novel approach to measure the locally resolved spin polarization of magnetic Co nanoislands on Cu(111). We find that the spin polarization is enhanced by 65% when increasing the width of the tunnel barrier by only 2.3 Å due to the different decay of the electron orbitals into vacuum. PMID:25423049

  17. Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

    SciTech Connect

    Tsunegi, S.; Sakuraba, Y.; Oogane, M.; Telling, N. D.; Shelford, L. R.; Arenholz, E.; van der Laan, G.; Hicken, R. J.; Takanashi, K.; Ando, Y.

    2009-07-01

    Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co{sub 2}MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin-flip tunnelling process.

  18. Looking into Tunnel Books.

    ERIC Educational Resources Information Center

    Hinshaw, Craig

    1999-01-01

    Describes how to make tunnel books, which are viewed by looking into a "tunnel" created by accordion-folded expanding sides. Suggests possible themes. Describes how to create a walk-through tunnel book for first grade students. (CMK)

  19. Carpal Tunnel Syndrome

    MedlinePlus

    ... arm. Just a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ligament and ... difficult. Often, the cause is having a smaller carpal tunnel than other people do. Other causes include ...

  20. Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands

    NASA Astrophysics Data System (ADS)

    Jain, Abhinav; Rojas-Sanchez, Juan-Carlos; Cubukcu, Murat; Peiro, Julian; Le Breton, Jean-Christophe; Vergnaud, Céline; Augendre, Emmanuel; Vila, Laurent; Attané, Jean-Philippe; Gambarelli, Serge; Jaffrès, Henri; George, Jean-Marie; Jamet, Matthieu

    2013-04-01

    Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the electrical spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. Here we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Si and n-Ge using a CoFeB/MgO tunnel contact. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from approximately 150 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with the standard spin diffusion model. More interestingly, in the case of germanium, we demonstrate a significant modulation of the spin signal by applying a back-gate voltage to the conduction channel. We also observe the inverse spin Hall effect in Ge by spin pumping from the CoFeB electrode. Both observations are consistent with spin accumulation in the Ge conduction band.

  1. Calibration of a Larmor clock for tunneling time experiments

    NASA Astrophysics Data System (ADS)

    Ramos, Jesus; Potnis, Shreyas; Spierings, David; Ebadi, Sapehr; Steinberg, Aephraim

    2016-05-01

    How much time does it take for a particle to tunnel? This has been a controversial question since the early times of quantum mechanics. The debate stems mainly from the inability to measure time directly. One proposal to measure the tunnelling time is the Larmor clock, in which the spin degree of freedom of the tunneling particle is used as a clock. This clock only ``ticks'' inside the forbidden region due to the precession of the spin about a magnetic field localized within the barrier. Here, we report the calibration of a Larmor clock to measure tunneling times of a 87 Rb Bose Einstein condensate. We use the Zeeman sublevels of the ground-state F = 2 manifold and Raman beams for the implementation of a Larmor clock. Experimental progress towards measuring the tunneling time and the challenges involved in this measurement will also be discussed.

  2. Quantum tunneling of the non-stationary BTZ black hole

    NASA Astrophysics Data System (ADS)

    Yang, Juan; Yang, Shu Zheng

    2009-07-01

    The semi-classical tunneling method is extended to study the Hawking tunneling radiation from the non-stationary BTZ black hole via general tortoise coordination transformation and WKB approximation. In this paper, we simplify the spin-0 scalar field equation and the spin-1/2 Dirac equation at the event horizon of this black hole, and then the quantum tunneling probability and Hawking temperature are obtained. Finally, the correctional tunneling rate is researched, and the results show that after considering the changed background space-time of the non-stationary BTZ black hole, the tunneling rate depends not only on the entropy change but also on the integral about {\\dot r}_H .

  3. The classical and quantum dynamics of molecular spins on graphene.

    PubMed

    Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Ana; Luis, Fernando; Dressel, Martin; Rauschenbach, Stephan; Kern, Klaus; Burghard, Marko; Bogani, Lapo

    2016-02-01

    Controlling the dynamics of spins on surfaces is pivotal to the design of spintronic and quantum computing devices. Proposed schemes involve the interaction of spins with graphene to enable surface-state spintronics and electrical spin manipulation. However, the influence of the graphene environment on the spin systems has yet to be unravelled. Here we explore the spin-graphene interaction by studying the classical and quantum dynamics of molecular magnets on graphene. Whereas the static spin response remains unaltered, the quantum spin dynamics and associated selection rules are profoundly modulated. The couplings to graphene phonons, to other spins, and to Dirac fermions are quantified using a newly developed model. Coupling to Dirac electrons introduces a dominant quantum relaxation channel that, by driving the spins over Villain's threshold, gives rise to fully coherent, resonant spin tunnelling. Our findings provide fundamental insight into the interaction between spins and graphene, establishing the basis for electrical spin manipulation in graphene nanodevices. PMID:26641019

  4. Spin slush in an extended spin ice model

    PubMed Central

    Rau, Jeffrey G.; Gingras, Michel J. P.

    2016-01-01

    We present a new classical spin liquid on the pyrochlore lattice by extending spin ice with further neighbour interactions. We find that this disorder-free spin model exhibits a form of dynamical heterogeneity with extremely slow relaxation for some spins, while others fluctuate quickly down to zero temperature. We thus call this state spin slush, in analogy to the heterogeneous mixture of solid and liquid water. This behaviour is driven by the structure of the ground-state manifold which extends the celebrated two-in/two-out ice states to include branching structures built from three-in/one-out, three-out/one-in and all-in/all-out tetrahedra defects. Distinctive liquid-like patterns in the magnetic correlations serve as a signature of this intermediate range order. Possible applications to materials as well the effects of quantum tunnelling are discussed. PMID:27470199

  5. Spin slush in an extended spin ice model.

    PubMed

    Rau, Jeffrey G; Gingras, Michel J P

    2016-01-01

    We present a new classical spin liquid on the pyrochlore lattice by extending spin ice with further neighbour interactions. We find that this disorder-free spin model exhibits a form of dynamical heterogeneity with extremely slow relaxation for some spins, while others fluctuate quickly down to zero temperature. We thus call this state spin slush, in analogy to the heterogeneous mixture of solid and liquid water. This behaviour is driven by the structure of the ground-state manifold which extends the celebrated two-in/two-out ice states to include branching structures built from three-in/one-out, three-out/one-in and all-in/all-out tetrahedra defects. Distinctive liquid-like patterns in the magnetic correlations serve as a signature of this intermediate range order. Possible applications to materials as well the effects of quantum tunnelling are discussed. PMID:27470199

  6. Spin slush in an extended spin ice model

    NASA Astrophysics Data System (ADS)

    Rau, Jeffrey G.; Gingras, Michel J. P.

    2016-07-01

    We present a new classical spin liquid on the pyrochlore lattice by extending spin ice with further neighbour interactions. We find that this disorder-free spin model exhibits a form of dynamical heterogeneity with extremely slow relaxation for some spins, while others fluctuate quickly down to zero temperature. We thus call this state spin slush, in analogy to the heterogeneous mixture of solid and liquid water. This behaviour is driven by the structure of the ground-state manifold which extends the celebrated two-in/two-out ice states to include branching structures built from three-in/one-out, three-out/one-in and all-in/all-out tetrahedra defects. Distinctive liquid-like patterns in the magnetic correlations serve as a signature of this intermediate range order. Possible applications to materials as well the effects of quantum tunnelling are discussed.

  7. Effects of disorder on spin injection and extraction for organic semiconductor spin-valves

    SciTech Connect

    Shi, Sha Liu, Feilong; Smith, Darryl L.; Ruden, P. Paul

    2015-02-28

    A device model for tunnel injection and extraction of spin-polarized charge carriers between ferromagnetic contacts and organic semiconductors with disordered molecular states is presented. Transition rates for tunneling are calculated based on a transfer Hamiltonian. Transport in the bulk semiconductor is described by macroscopic device equations. Tunneling predominantly involves organic molecular levels near the metal Fermi energy, and therefore typically in the tail of the band that supports carrier transport in the semiconductor. Disorder-induced broadening of the relevant band plays a critical role for the injection and extraction of charge carriers and for the resulting magneto-resistance of an organic semiconductor spin valve.

  8. Tunneling nanotubes

    PubMed Central

    Austefjord, Magnus Wiger; Gerdes, Hans-Hermann; Wang, Xiang

    2014-01-01

    Tunneling nanotubes (TNTs) are recently discovered thin membranous tubes that interconnect cells. During the last decade, research has shown TNTs to be diverse in morphology and composition, varying between and within cell systems. In addition, the discovery of TNT-like extracellular protrusions, as well as observations of TNTs in vivo, has further enriched our knowledge on the diversity of TNT-like structures. Considering the complex molecular mechanisms underlying the formation of TNTs, as well as their different functions in intercellular communication, it is important to decipher how heterogeneity of TNTs is established, and to address what roles the compositional elements have in the execution of various functions. Here, we review the current knowledge on the morphological and structural diversity of TNTs, and address the relation between the formation, the structure, and the function of TNTs. PMID:24778759

  9. Spin Parity effects in STM single magnetic atom manipulation

    NASA Astrophysics Data System (ADS)

    Delgado, Fernando; Fernández-Rossier, Joaquín

    2012-02-01

    Recent experimental work shows that a spin polarized scanning tunneling microscopy tip can be used both to read and write the spin orientation of a single magnetic spin [1]. Inelastic electron tunneling spectroscopy (IETS) shows that spin of the magnetic atom is quantized [2], like the spin of a molecular magnet. Here we discuss two fundamental problems that arise when a bit of classical information is stored on a quantized spin: quantum spin tunneling and back-action of the readout process. Quantum tunneling is responsible of the loss of information due to the relaxation of the spin coupled to the environment, while the detection induced back-action leads to an unwanted modification of the spin state. We find that fundamental differences exist between integer and semi-integer spins when it comes to both, read and write classical information in a quantized spin.[4pt] [1] S. Loth et al, Nature Physics 6, 340 (2010).[0pt] [2] C. Hirjibehedin et al, Science 317, 1199 (2007).

  10. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    PubMed

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  11. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V.; Samant, Mahesh G.; Felser, Claudia; Parkin, Stuart S. P.

    2016-01-01

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  12. Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Dai, Jian-Qing

    2016-08-01

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO3/Fe multiferroic tunnel junction with asymmetric TiO2- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6pz orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  13. Tunneling magnetoresistance of silicon chains

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2016-05-01

    The tunneling magnetoresistance (TMR) of a silicon chain sandwiched between nickel electrodes was examined by using first-principles density functional theory. The relative orientation of the magnetization in a parallel-alignment (PA) configuration of two nickel electrodes enhanced the current with a bias less than 0.4 V compared with that in an antiparallel-alignment configuration. Consequently, the silicon chain-nickel electrodes yielded good TMR characteristics. In addition, there was polarized spin current in the PA configuration. The spin polarization of sulfur atoms functioning as a linking bridge between the chain and nickel electrode played an important role in the magnetic effects of the electric current. Moreover, the hybridization of the sulfur 3p orbital and σ-conjugated silicon 3p orbital contributed to increasing the total current.

  14. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

    SciTech Connect

    Chantis, Athanasios N

    2008-01-01

    In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

  15. Tunnel magnetoresistance in Self-Assembled Monolayers Based Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Mattana, Richard; Barraud, Clément; Tatay, Sergio; Galbiati, Marta; Seneor, Pierre; Bouzehouane, Karim; Jacquet, Eric; Deranlot, Cyrile; Fert, Albert; Petroff, Frédéric

    2012-02-01

    Organic/molecular spintronics is a rising research field at the frontier between spintronics and organic chemistry. Organic molecule and semiconductors were first seen as promising for spintronics devices due to their expected long spin lifetime. But an exciting challenge has also been to find opportunities arising from chemistry to develop new spintronics functionalities. It was shown that the molecular structure and the ferromagnetic metal/molecule hybridization can strongly influence interfacial spin properties going from spin polarization enhancement to its sign control in spintronics devices. In this scenario, while scarcely studied, self-assembled monolayers (SAMs) are expected to become perfect toy barriers to further test these tailoring properties in molecular magnetic tunnel junctions (MTJs). Due to its very high spin polarization and air stability LSMO has positioned itself as the electrode of choice in most of the organic spintronics devices. We will present a missing building block for molecular spintronics tailoring: the grafting and film characterization of organic monofunctionalized long alkane chains over LSMO. We have obtained 35% of magnetoresistance in LSMO/SAMs/Co MTJs. We will discuss the unusual behaviour of the bias voltage dependence of the TMR.

  16. The straintronic spin-neuron.

    PubMed

    Biswas, Ayan K; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2015-07-17

    In artificial neural networks, neurons are usually implemented with highly dissipative CMOS-based operational amplifiers. A more energy-efficient implementation is a 'spin-neuron' realized with a magneto-tunneling junction (MTJ) that is switched with a spin-polarized current (representing weighted sum of input currents) that either delivers a spin transfer torque or induces domain wall motion in the soft layer of the MTJ to mimic neuron firing. Here, we propose and analyze a different type of spin-neuron in which the soft layer of the MTJ is switched with mechanical strain generated by a voltage (representing weighted sum of input voltages) and term it straintronic spin-neuron. It dissipates orders of magnitude less energy in threshold operations than the traditional current-driven spin neuron at 0 K temperature and may even be faster. We have also studied the room-temperature firing behaviors of both types of spin neurons and find that thermal noise degrades the performance of both types, but the current-driven type is degraded much more than the straintronic type if both are optimized for maximum energy-efficiency. On the other hand, if both are designed to have the same level of thermal degradation, then the current-driven version will dissipate orders of magnitude more energy than the straintronic version. Thus, the straintronic spin-neuron is superior to current-driven spin neurons. PMID:26112081

  17. The straintronic spin-neuron

    NASA Astrophysics Data System (ADS)

    Biswas, Ayan K.; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2015-07-01

    In artificial neural networks, neurons are usually implemented with highly dissipative CMOS-based operational amplifiers. A more energy-efficient implementation is a ‘spin-neuron’ realized with a magneto-tunneling junction (MTJ) that is switched with a spin-polarized current (representing weighted sum of input currents) that either delivers a spin transfer torque or induces domain wall motion in the soft layer of the MTJ to mimic neuron firing. Here, we propose and analyze a different type of spin-neuron in which the soft layer of the MTJ is switched with mechanical strain generated by a voltage (representing weighted sum of input voltages) and term it straintronic spin-neuron. It dissipates orders of magnitude less energy in threshold operations than the traditional current-driven spin neuron at 0 K temperature and may even be faster. We have also studied the room-temperature firing behaviors of both types of spin neurons and find that thermal noise degrades the performance of both types, but the current-driven type is degraded much more than the straintronic type if both are optimized for maximum energy-efficiency. On the other hand, if both are designed to have the same level of thermal degradation, then the current-driven version will dissipate orders of magnitude more energy than the straintronic version. Thus, the straintronic spin-neuron is superior to current-driven spin neurons.

  18. The straintronic spin-neuron.

    PubMed

    Biswas, Ayan K; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2015-07-17

    In artificial neural networks, neurons are usually implemented with highly dissipative CMOS-based operational amplifiers. A more energy-efficient implementation is a 'spin-neuron' realized with a magneto-tunneling junction (MTJ) that is switched with a spin-polarized current (representing weighted sum of input currents) that either delivers a spin transfer torque or induces domain wall motion in the soft layer of the MTJ to mimic neuron firing. Here, we propose and analyze a different type of spin-neuron in which the soft layer of the MTJ is switched with mechanical strain generated by a voltage (representing weighted sum of input voltages) and term it straintronic spin-neuron. It dissipates orders of magnitude less energy in threshold operations than the traditional current-driven spin neuron at 0 K temperature and may even be faster. We have also studied the room-temperature firing behaviors of both types of spin neurons and find that thermal noise degrades the performance of both types, but the current-driven type is degraded much more than the straintronic type if both are optimized for maximum energy-efficiency. On the other hand, if both are designed to have the same level of thermal degradation, then the current-driven version will dissipate orders of magnitude more energy than the straintronic version. Thus, the straintronic spin-neuron is superior to current-driven spin neurons.

  19. Tunneling magnetoresistive heads for magnetic data storage.

    PubMed

    Mao, Sining

    2007-01-01

    Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the

  20. Spin filter due to spin Hall effect with axially asymmetric potential

    NASA Astrophysics Data System (ADS)

    Yokoyama, Tomohiro; Eto, Mikio

    2010-02-01

    We examine a three-terminal spin filter including an artificial potential created by antidot, scanning tunnel microscope (STM) tip, etc., fabricated on semiconductor heterostructures with strong spin-orbit interaction. When the potential is attractive and its strength is properly tuned, the resonant scattering takes place, which enhances the extrinsic spin Hall effect. As a result, the efficiency of the spin filter can be more than 50% when the potential is axially symmetric. The efficiency becomes smaller when the symmetry is broken, but we still expect an efficient spin filter unless the degree of asymmetry is too large.

  1. Room Temperature Magnetic Barrier Layers in Magnetic Tunnel Junctions

    SciTech Connect

    Nelson-Cheeseman, B. B.; Wong, F. J.; Chopdekar, R. V.; Arenholz, E.; Suzuki, Y.

    2010-03-09

    We investigate the spin transport and interfacial magnetism of magnetic tunnel junctions with highly spin polarized LSMO and Fe3O4 electrodes and a ferrimagnetic NiFe2O4 (NFO) barrier layer. The spin dependent transport can be understood in terms of magnon-assisted spin dependent tunneling where the magnons are excited in the barrier layer itself. The NFO/Fe3O4 interface displays strong magnetic coupling, while the LSMO/NFO interface exhibits clear decoupling as determined by a combination of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. This decoupling allows for distinct parallel and antiparallel electrode states in this all-magnetic trilayer. The spin transport of these devices, dominated by the NFO barrier layer magnetism, leads to a symmetric bias dependence of the junction magnetoresistance at all temperatures.

  2. Tunneling spectroscopy of the two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Chan, Ho Bun

    We measure the single particle density of states (DOS) of a two-dimensional electron system (2DES) in a GaAs/AlGaAs heterostructure. Using a technique that we call ``Time Domain Capacitance Spectroscopy'' (TDCS), we measure the complete current-voltage characteristics for tunneling into the 2DES without making ohmic contacts to it. TDCS detects the tunneling current in regimes difficult to access by conventional methods, such as when the in-plane conductance is low. For the first time we detect the contributions of localized states to the tunneling current. The DOS of an interacting 2DES in the diffusive limit displays logarithmic energy dependence near the Fermi level. Using TDCS, we measure the voltage dependence of the tunneling conductance of a semiconductor 2DES and observe the logarithmic Coulomb anomaly for the first time in 2D systems other than thin metal films. As we increase the density, this suppression in tunneling conductance narrows and recedes. Nevertheless suppression reappears when we apply a magnetic field perpendicular to the 2D plane. We find that the tunneling conductance depends linearly on voltage near zero bias for all magnetic field strengths and electron densities. Moreover, the slopes of this linear gap are strongly field dependent. The data are suggestive of a new model of the tunneling gap in the presence of disorder and screening. We also use TDCS to study the interactions among electronic spins. By applying excitations less than kT, we observe that equilibrium tunneling into spin-polarized quantum Hall states (ν = 1, 3, 1/3) occurs at two distinct tunneling rates for samples of very high mobility. Some electrons tunnel into the 2DES at a fast rate while the rest tunnel at a rate up to 2 orders of magnitude slower. Such novel double- rate tunneling is not observed at even-integer filling fractions where the 2DES is not spin-polarized. The dependence of the two rates on magnetic field, temperature and tunnel barrier thickness suggests

  3. Large magnetoresistance of paracyclophane-based molecular tunnel junctions: A first-principles study

    SciTech Connect

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Han, X. F.

    2013-12-07

    We report a theoretical study of magnetoresistance and spin-polarized transport of a series of paracyclophane-based molecular tunnel junctions. We predict that the molecular tunnel junction using [2.2]-paracyclophane barrier has the desired low resistance area product in combination with high magnetoresistance ratio. In addition, we find the spin-polarized conductance decreases exponentially with increasing the molecular length, indicating a nonresonant tunneling mechanism. In particular, the characteristic decay constant can be theoretically evaluated from the complex band structure of periodic paracyclophane molecule. The spin-polarized transport mechanism is systematically analyzed.

  4. 7 x 10-Foot Atmospheric Wind Tunnel (AWT)

    NASA Technical Reports Server (NTRS)

    1931-01-01

    Drawing of 7 x 10-Foot Atmospheric Wind Tunnel (AWT). In 1928, the NACA decided to replace its original Atmospheric Wind Tunnel (AWT #1) with two tunnels--the 5-foot vertical tunnel and a 7 by 10 foot rectangular throat tunnel. Both were open-throat, closed-return-passage tunnels. While the 5-foot vertical tunnel was to be used mainly for spin tests, the 7x10 was an all-purpose tunnel although the main intent was to study stability and control problems. Construction was completed in the summer of 1930; calibration later that same year. The balance was installed and the tunnel went into operation in early 1931. The Warwick Machine Co. of Newport News, Virginia had the contract to fabricate and erection the 7x10-Foot tunnel for a total cost of $18,018.90. The balance was made by Fairbanks, Morse and Co., of Baltimore, Maryland for 2,544.00. The honeycomb was made by the Berkley Machine Works and Foundry Co., Inc. of Norfolk, Virginia for $1,580 and the control panel by Clark Controller Co. of Cleveland, OH for $1,153.

  5. Geometrical spin symmetry and spin

    SciTech Connect

    Pestov, I. B.

    2011-07-15

    Unification of General Theory of Relativity and Quantum Mechanics leads to General Quantum Mechanics which includes into itself spindynamics as a theory of spin phenomena. The key concepts of spindynamics are geometrical spin symmetry and the spin field (space of defining representation of spin symmetry). The essence of spin is the bipolar structure of geometrical spin symmetry induced by the gravitational potential. The bipolar structure provides a natural derivation of the equations of spindynamics. Spindynamics involves all phenomena connected with spin and provides new understanding of the strong interaction.

  6. Experimental Investigations of Flow past Spinning Cylinders

    NASA Astrophysics Data System (ADS)

    Carlucci, Pasquale; Buckley, Liam; Mehmedagic, Igbal; Carlucci, Donald; Thangam, Siva

    2015-11-01

    Experimental investigations of flow past spinning cylinders is presented in the context of their application and relevance to flow past projectiles. A subsonic wind tunnel is used to perform experiments on flow past spinning cylinders that are sting-mounted and oriented such that their axis of rotation is aligned with the mean flow. The experiments cover a Reynolds number range of up to 300000 and rotation numbers of up to 2 (based on cylinder diameter). The experimental validation of the tunnel characteristics and the benchmarking of the flow field in the tunnel are described. The experimental results for spinning cylinders with both rear-mounted and fore-mounted stings are presented along with available computational and experimental findings. This work was funded in part by U. S. Army ARDEC.

  7. Enhanced Atomic-Scale Spin Contrast due to Spin Friction

    NASA Astrophysics Data System (ADS)

    Ouazi, S.; Kubetzka, A.; von Bergmann, K.; Wiesendanger, R.

    2014-02-01

    Atom manipulation with the magnetic tip of a scanning tunneling microscope is a versatile technique to construct and investigate well-defined atomic spin arrangements. Here we explore the possibility of using a magnetic adatom as a local probe to image surface spin textures. As a model system we choose a Néel state with 120° between neighboring magnetic moments. Close to the threshold of manipulation, the adatom resides in the threefold, magnetically frustrated hollow sites, and consequently no magnetic signal is detected in manipulation images. At smaller tip-adatom distances, however, the adatom is moved towards the magnetically active bridge sites and due to the exchange force of the tip the manipulation process becomes spin dependent. In this way the adatom can be used as an amplifying probe for the surface spin texture.

  8. Pumped Spin-Current in Single Quantum Dot with Spin-Dependent Electron Temperature

    NASA Astrophysics Data System (ADS)

    Liu, Jia; Wang, Song; Du, Xiaohong

    2016-09-01

    Spin-dependent electron temperature effect on the spin pump in a single quantum dot connected to Normal and/or Ferromagnetic leads are investigated with the help of master equation method. Results show that spin heat accumulation breaks the tunneling rates balance at the thermal equilibrium state thus the charge current and the spin current are affected to some extent. Pure spin current can be obtained by adjusting pumping intensity or chemical potential of the lead. Spin heat accumulation of certain material can be detected by measuring the charge current strength in symmetric leads architectures. In practical devices, spin-dependent electron temperature effect is quite significant and our results should be useful in quantum information processing and spin Caloritronics.

  9. Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers.

    PubMed

    Gao, Li; Jiang, Xin; Yang, See-Hun; Burton, J D; Tsymbal, Evgeny Y; Parkin, Stuart S P

    2007-11-30

    Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias voltage. Distinctly different TAMR behaviors are obtained for devices formed with highly textured crystalline MgO(001) and amorphous Al2O3 tunnel barriers. A tight-binding model shows that a fourfold angular dependence can be explained by the presence of an interface resonant state that affects the transmission of the contributing tunneling states through a spin-orbit interaction. PMID:18233308

  10. 4. 'Ring Stones & Tunnel Sections, Tunnel #33,' Southern Pacific ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. 'Ring Stones & Tunnel Sections, Tunnel #33,' Southern Pacific Standard Double-Track Tunnel, ca. 1913. Compare to photos in documentation sets for Tunnel 18 (HAER No. CA-197), Tunnel 34 (HAER No. CA-206), and Tunnel 1 (HAER No. CA-207). - Central Pacific Transcontinental Railroad, Sacramento to Nevada state line, Sacramento, Sacramento County, CA

  11. Current-driven spin dynamics of artificially constructed quantum magnets.

    PubMed

    Khajetoorians, Alexander Ako; Baxevanis, Benjamin; Hübner, Christoph; Schlenk, Tobias; Krause, Stefan; Wehling, Tim Oliver; Lounis, Samir; Lichtenstein, Alexander; Pfannkuche, Daniela; Wiebe, Jens; Wiesendanger, Roland

    2013-01-01

    The future of nanoscale spin-based technologies hinges on a fundamental understanding and dynamic control of atomic-scale magnets. The role of the substrate conduction electrons on the dynamics of supported atomic magnets is still a question of interest lacking experimental insight. We characterized the temperature-dependent dynamical response of artificially constructed magnets, composed of a few exchange-coupled atomic spins adsorbed on a metallic substrate, to spin-polarized currents driven and read out by a magnetic scanning tunneling microscope tip. The dynamics, reflected by two-state spin noise, is quantified by a model that considers the interplay between quantum tunneling and sequential spin transitions driven by electron spin-flip processes and accounts for an observed spin-transfer torque effect.

  12. Unveiling self-assembled monolayers' potential for molecular spintronics: spin transport at high voltage.

    PubMed

    Galbiati, Marta; Barraud, Clément; Tatay, Sergio; Bouzehouane, Karim; Deranlot, Cyrile; Jacquet, Eric; Fert, Albert; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric

    2012-12-18

    Molecular magnetic tunnel junctions using self-assembled monolayers (SAMs) as tunnel barriers show stable and efficient spin transport properties. Large tunnel magnetoresistance with a flat bias voltage dependence of the magnetoresistance is observed in La(2/3) Sr(1/3) MnO(3) /dodecylphosphonic acid SAM/Co nanocontacts. This opens the door to spintronic tailoring though SAM engineering and could also lead to new venues for spin injection in organic devices.

  13. Nanosized perpendicular organic spin-valves

    SciTech Connect

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Richter, Tim; Fuhrmann, Bodo; Schmidt, Georg

    2015-03-09

    A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

  14. Nanosized perpendicular organic spin-valves

    NASA Astrophysics Data System (ADS)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Richter, Tim; Fuhrmann, Bodo; Schmidt, Georg

    2015-03-01

    A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

  15. Variable-Density Tunnel

    NASA Technical Reports Server (NTRS)

    1921-01-01

    Wind Tunnel #2, building interior. Reinforced concrete foundation for Variable-Density Tunnel (VDT) under construction. The tank and contents weighed about 100 tons. Negative on roll #1 of copy negatives returned by National Archives on 70mm film rolls.

  16. Variable-Density Tunnel - Wind Tunnel #2

    NASA Technical Reports Server (NTRS)

    1923-01-01

    Underside of the Variable-Density Tunnel (VDT). The compressors are to the left. Balance detail - entrance view of wind tunnel #2. The photographer was probably shooting film for Dr. Joseph Ames' Wilbur Wright Memorial Lecture given to the Royal Aeronautical Society on May 31, 1923.

  17. The Tunnels of Samos

    NASA Technical Reports Server (NTRS)

    Apostol, Tom M. (Editor)

    1995-01-01

    This 'Project Mathematics' series video from CalTech presents the tunnel of Samos, a famous underground aquaduct tunnel located near the capital of Pithagorion (named after the famed Greek mathematician, Pythagoras, who lived there), on one of the Greek islands. This tunnel was constructed around 600 BC by King Samos and was built under a nearby mountain. Through film footage and computer animation, the mathematical principles and concepts of why and how this aquaduct tunnel was built are explained.

  18. Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

    PubMed Central

    Kamalakar, M. Venkata; Dankert, André; Kelly, Paul J.; Dash, Saroj P.

    2016-01-01

    Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in cobalt|few layer h-BN|graphene junctions leading to a large negative spin polarization in graphene at room temperature. Through nonlocal pure spin transport and Hanle precession measurements performed on devices with different interface barrier conditions, we associate the negative spin polarization with high resistance few layer h-BN|ferromagnet contacts. Detailed bias and gate dependent measurements reinforce the robustness of the effect in our devices. These spintronic effects in two-dimensional van der Waals heterostructures hold promise for future spin based logic and memory applications. PMID:26883717

  19. Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Kamalakar, M. Venkata; Dankert, André; Kelly, Paul J.; Dash, Saroj P.

    2016-02-01

    Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in cobalt|few layer h-BN|graphene junctions leading to a large negative spin polarization in graphene at room temperature. Through nonlocal pure spin transport and Hanle precession measurements performed on devices with different interface barrier conditions, we associate the negative spin polarization with high resistance few layer h-BN|ferromagnet contacts. Detailed bias and gate dependent measurements reinforce the robustness of the effect in our devices. These spintronic effects in two-dimensional van der Waals heterostructures hold promise for future spin based logic and memory applications.

  20. Four-state ferroelectric spin-valve

    PubMed Central

    Quindeau, Andy; Fina, Ignasi; Marti, Xavi; Apachitei, Geanina; Ferrer, Pilar; Nicklin, Chris; Pippel, Eckhard; Hesse, Dietrich; Alexe, Marin

    2015-01-01

    Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction. PMID:25961513

  1. Four-state ferroelectric spin-valve

    NASA Astrophysics Data System (ADS)

    Quindeau, Andy; Fina, Ignasi; Marti, Xavi; Apachitei, Geanina; Ferrer, Pilar; Nicklin, Chris; Pippel, Eckhard; Hesse, Dietrich; Alexe, Marin

    2015-05-01

    Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction.

  2. Four-state ferroelectric spin-valve.

    PubMed

    Quindeau, Andy; Fina, Ignasi; Marti, Xavi; Apachitei, Geanina; Ferrer, Pilar; Nicklin, Chris; Pippel, Eckhard; Hesse, Dietrich; Alexe, Marin

    2015-01-01

    Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction. PMID:25961513

  3. Variable Density Tunnel

    NASA Technical Reports Server (NTRS)

    1931-01-01

    Variable Density Tunnel in operation. Man at far right is probably Harold J. 'Cannonball' Tuner, longtime safety officer, who started with Curtiss in the teens. This view of the Variable Density Tunnel clearly shows the layout of the Tunnel's surroundings, as well as the plumbing and power needs of the this innovative research tool.

  4. Dirac particles tunneling from black holes with topological defects

    NASA Astrophysics Data System (ADS)

    Jusufi, Kimet

    2016-08-01

    We study Hawking radiation of Dirac particles with spin-1 / 2 as a tunneling process from Schwarzschild-de Sitter and Reissner-Nordström-de Sitter black holes in background spacetimes with a spinning cosmic string and a global monopole. Solving Dirac's equation by employing the Hamilton-Jacobi method and WKB approximation we find the corresponding tunneling probabilities and the Hawking temperature. Furthermore, we show that the Hawking temperature of those black holes remains unchanged in presence of topological defects in both cases.

  5. Temperature dependence of tunneling magnetoresistance in epitaxial magnetic tunnel junctions using a Co2FeAl Heusler alloy electrode

    NASA Astrophysics Data System (ADS)

    Wang, Wenhong; Sukegawa, Hiroaki; Inomata, Koichiro

    2010-09-01

    Spin-valve-type epitaxial magnetic tunnel junctions (MTJs) consisting of a full-Heusler alloy Co2FeAl (CFA) and a MgO tunnel barrier were fabricated on a single-crystal MgO(001) substrate using sputtering method for all the layers. Experimental temperature-dependent tunnel magnetoresistance in the MTJs was revealed to be fitted well using spin wave excitation model for tunneling spin polarization, P(T)=P0(1-αT3/2) up to room temperature, where P0 is the spin polarization at 0 K and α is a fitting parameter. The determined P and α are shown to be significantly different between bottom and top CFA electrodes facing a MgO barrier. It is demonstrated that the bottom CFA deposited on a Cr buffer has a low α and behaves as a half-metal with P˜1 in terms of the Δ1 symmetry due to the coherent tunneling through a MgO barrier.

  6. Single to quadruple quantum dots with tunable tunnel couplings

    SciTech Connect

    Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K.; Otsuka, T.; Tarucha, S.

    2014-03-17

    We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.

  7. Fermion tunneling from higher-dimensional black holes

    SciTech Connect

    Lin Kai; Yang Shuzheng

    2009-03-15

    Via the semiclassical approximation method, we study the 1/2-spin fermion tunneling from a higher-dimensional black hole. In our work, the Dirac equations are transformed into a simple form, and then we simplify the fermion tunneling research to the study of the Hamilton-Jacobi equation in curved space-time. Finally, we get the fermion tunneling rates and the Hawking temperatures at the event horizon of higher-dimensional black holes. We study fermion tunneling of a higher-dimensional Schwarzschild black hole and a higher-dimensional spherically symmetric quintessence black hole. In fact, this method is also applicable to the study of fermion tunneling from four-dimensional or lower-dimensional black holes, and we will take the rainbow-Finsler black hole as an example in order to make the fact explicit.

  8. Fermion tunneling from higher-dimensional black holes

    NASA Astrophysics Data System (ADS)

    Lin, Kai; Yang, Shu-Zheng

    2009-03-01

    Via the semiclassical approximation method, we study the 1/2-spin fermion tunneling from a higher-dimensional black hole. In our work, the Dirac equations are transformed into a simple form, and then we simplify the fermion tunneling research to the study of the Hamilton-Jacobi equation in curved space-time. Finally, we get the fermion tunneling rates and the Hawking temperatures at the event horizon of higher-dimensional black holes. We study fermion tunneling of a higher-dimensional Schwarzschild black hole and a higher-dimensional spherically symmetric quintessence black hole. In fact, this method is also applicable to the study of fermion tunneling from four-dimensional or lower-dimensional black holes, and we will take the rainbow-Finsler black hole as an example in order to make the fact explicit.

  9. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers.

    PubMed

    Wang, K; Sanderink, J G M; Bolhuis, T; van der Wiel, W G; de Jong, M P

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.

  10. Generation and coherent control of pure spin currents via terahertz pulses

    SciTech Connect

    Schüler, Michael Berakdar, Jamal

    2014-04-21

    We inspect the time and spin-dependent, inelastic tunneling in engineered semiconductor-based double quantum well driven by time-structured terahertz pulses. An essential ingredient is an embedded spin-active structure with vibrational modes that scatter the pulse driven carriers. Due to the different time scales of the charge and spin dynamics, the spin-dependent electron-vibron coupling may result in pure net spin current (with negligible charge current). Heating the vibrational site may affect the resulting spin current. Furthermore, by controlling the charge dynamics, the spin dynamics and the generated spin current can be manipulated and switched on and off coherently.

  11. Turbulent Flow Past Spinning Cylinders

    NASA Astrophysics Data System (ADS)

    Mehmedagic, Igbal; Carlucci, Donald; Carlucci, Pasquale; Thangam, Siva

    2009-11-01

    Flow past cylinders aligned along their axis where a base freely spins while attached to a non-spinning forebody is considered from a computational and experimental point of view. The time-averaged equations of motion and energy are solved using the modeled form of transport equations for the turbulence kinetic energy and the scalar form of turbulence dissipation with an efficient finite-volume algorithm. An anisotropic two-equation Reynolds-stress model that incorporates the effect of rotation-modified energy spectrum and swirl is used to perform computations for the flow past axially rotating cylinders. Both rigid cylinders as well as that of cylinders with free-spinning base are considered from a computational point of view. A subsonic wind tunnel with a forward-sting mounted spinning cylinder is used for experiments. Experiments are performed for a range of spin rates and free stream flow conditions. The experimental results of Carlucci & Thangam (2001) are used to benchmark flow over spinning cylinders. The data is extended to munitions spinning in the wake of other munitions. Applications involving the design of projectiles are discussed.

  12. Spin-Dependent Beats Created by Irradiation of Microwave Field Through a Quantum Dot

    NASA Astrophysics Data System (ADS)

    Tagani, M. Bagheri; Soleimani, H. Rahimpour

    We study spin-dependent transport through a quantum dot with Zeeman split levels coupled to ferromagnetic leads and under influence of microwave irradiation. Current polarization, spin current, spin accumulation and tunneling magnetoresistance are analyzed using nonequilibrium Green's function formalism and rate equations. Spin-dependent beats in spin resolved currents are observed. The effects of magnetic field, temperature and Coulomb interaction on these beats are studied.

  13. Probing spin flip scattering in ballistic nanosystems

    SciTech Connect

    Zeng, Z. M.; Feng, J. F.; Wang, Y.; Han, Prof. X. F.; Zhan, W. S.; Zhang, Xiaoguang; Zhang, Z.

    2006-01-01

    Because spin-flip scattering length is longer than the electron mean-free-path in a metal, past studies of spin-flip scattering are limited to the diffusive regime. Spin accumulation in the nanometer sized spacer layer of a magnetic double barrier tunnel junction allows the study of spin flip scattering near ballistic limit. We extract the spin-flip conductance $G_s$ of the spacer layer from magnetoresistance measurements. A linear temperature dependence of $G_s$ is found. The bias voltage dependence shows a quantum well resonance which explains the sharp reduction of the magnetoresistance. At 4.2K $G_s$ yields the mean-free-path (70nm) and the spin-flip length ($1.0$-$2.6\\mu$m).

  14. Clocked single-spin source based on a spin-split superconductor

    NASA Astrophysics Data System (ADS)

    Dittmann, Niklas; Splettstoesser, Janine; Giazotto, Francesco

    2016-08-01

    We propose an accurate clocked single-spin source for ac-spintronic applications. Our device consists of a superconducting island covered by a ferromagnetic insulator (FI) layer through which it is coupled to superconducting leads. Single-particle transfer relies on the energy gaps and the island's charging energy, and is enabled by a bias and a time-periodic gate voltage. Accurate spin transfer is achieved by the FI layer which polarizes the island, provides spin-selective tunneling barriers and improves the precision by suppressing Andreev reflection. We analyze realistic material combinations and experimental requirements which allow for a clocked spin current in the MHz regime.

  15. Quantum Tunneling of ^3He in Solid ^4He: A New Analysis

    NASA Astrophysics Data System (ADS)

    Huan, C.; Kim, S. S.; Candela, D.; Sullivan, N. S.

    2016-11-01

    We discuss the analysis of the experimental values of the nuclear spin-lattice and spin-spin relaxation times for the tunneling of ^3He as isotopic impurities in solid ^4He. These two relaxation times cannot be described quantitatively using a unique correlation time although it is often presented as such in the literature. In this paper, we discuss how to distinguish the high-frequency portion of the spectral densities that determine the spin-lattice relaxation rates from the low-frequency components which determine the spin-spin relaxation rates.

  16. Determining the spin-orbit coupling via spin-polarized spectroscopy of magnetic impurities

    NASA Astrophysics Data System (ADS)

    Kaladzhyan, V.; Simon, P.; Bena, C.

    2016-10-01

    We study the spin-resolved spectral properties of the impurity states associated to the presence of magnetic impurities in two-dimensional as well as one-dimensional systems with Rashba spin-orbit coupling. We focus on Shiba bound states in superconducting materials, as well as on impurity states in metallic systems. Using a combination of a numerical T -matrix approximation and a direct analytical calculation of the bound-state wave function, we compute the local density of states (LDOS) together with its Fourier transform (FT). We find that the FT of the spin-polarized LDOS, a quantity accessible via spin-polarized scanning tunneling microscopy, allows to accurately extract the strength of the spin-orbit coupling. Also, we confirm that the presence of magnetic impurities is strictly necessary for such measurement, and that non-spin-polarized experiments cannot have access to the value of the spin-orbit coupling.

  17. Fermions Tunneling from Bardeen-Vaidya Black Hole via General Tortoise Coordinate Transformation

    NASA Astrophysics Data System (ADS)

    Kai, Lin; Shuzheng, Yang

    In this paper, we research on the scalar field particles and 1/2 spin fermions tunneling from the event horizon of Bardeen-Vaidya black hole by semiclassical method and general tortoise coordinate transformation, and obtain the Hawking temperature and tunneling rate near the event horizon.

  18. Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: first-principles calculations.

    PubMed

    Chantis, Athanasios N; Belashchenko, Kirill D; Smith, Darryl L; Tsymbal, Evgeny Y; van Schilfgaarde, Mark; Albers, Robert C

    2007-11-01

    A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions. PMID:18233099

  19. Large-scale fabrication of BN tunnel barriers for graphene spintronics

    SciTech Connect

    Fu, Wangyang; Makk, Péter; Maurand, Romain; Bräuninger, Matthias; Schönenberger, Christian

    2014-08-21

    We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

  20. Kondo effect in magnetic tunnel junctions with an AlOx tunnel barrier

    NASA Astrophysics Data System (ADS)

    Zheng, Chao; Shull, Robert D.; Chen, P. J.; Pong, Philip W. T.

    2016-06-01

    The influence of the magnetization configuration on the Kondo effect in a magnetic tunnel junction is investigated. In the parallel configuration, an additional resistance contribution (R*) below 40 K exhibits a logarithmic temperature dependence, indicating the presence of the Kondo effect. However, in the anti-parallel configuration, the Kondo-effect-associated spin-flip scattering has a nontrivial contribution to the tunneling current, which compensates the reduction of the current directly caused by Kondo scattering, making R* disappear. These results indicate that suppression and restoration of the Kondo effect can be experimentally achieved by altering the magnetization configuration, enhancing our understanding of the role of the Kondo effect in spin-dependent transport.

  1. Giant tunnel magneto-resistance in graphene based molecular tunneling junction

    NASA Astrophysics Data System (ADS)

    Wang, Bin; Li, Jianwei; Yu, Yunjin; Wei, Yadong; Wang, Jian; Guo, Hong

    2016-02-01

    We propose and theoretically investigate a class of stable zigzag graphene nanoribbon (ZGNR) based molecular magnetic tunneling junctions (MTJs). For those junctions having pentagon-connecting formations, huge tunnel magneto-resistance (TMR) is found. Different from most of the other proposed molecular junctions, the huge TMR in our structures is generic, and is not significantly affected by external parameters such as bias voltage, gate voltage, length of the molecule and width of the ZGNRs. The double pentagon-connecting formation between the molecule and ZGNRs is critical for the remarkable TMR ratio, which is as large as ~2 × 105. These molecular MTJs behave as almost perfect spin filters and spin valve devices. Other connecting formations of the ZGNR based MTJs lead to much smaller TMR. By first principles analysis, we reveal the microscopic physics responsible for this phenomenon.

  2. Giant tunnel magneto-resistance in graphene based molecular tunneling junction.

    PubMed

    Wang, Bin; Li, Jianwei; Yu, Yunjin; Wei, Yadong; Wang, Jian; Guo, Hong

    2016-02-14

    We propose and theoretically investigate a class of stable zigzag graphene nanoribbon (ZGNR) based molecular magnetic tunneling junctions (MTJs). For those junctions having pentagon-connecting formations, huge tunnel magneto-resistance (TMR) is found. Different from most of the other proposed molecular junctions, the huge TMR in our structures is generic, and is not significantly affected by external parameters such as bias voltage, gate voltage, length of the molecule and width of the ZGNRs. The double pentagon-connecting formation between the molecule and ZGNRs is critical for the remarkable TMR ratio, which is as large as ∼2 × 10(5). These molecular MTJs behave as almost perfect spin filters and spin valve devices. Other connecting formations of the ZGNR based MTJs lead to much smaller TMR. By first principles analysis, we reveal the microscopic physics responsible for this phenomenon. PMID:26790615

  3. Spin-Entry Characteristics of a Large Supersonic Bomber as Determined by Dynamic Model Tests

    NASA Technical Reports Server (NTRS)

    Bowman, James S.

    1965-01-01

    An investigation has been conducted in the Langley spin tunnel and at a catapult launch facility of a 1/60-scale dynamic model to determine the spin-entry characteristics of a large supersonic bomber. Catapult tests indicated that spin-entry motions were obtainable for a center-of-gravity location of 0.21 mean aerodynamic chord but were not obtainable at a center-of-gravity location of 0.25 mean aerodynamic chord. Deflected ailerons were effective in promoting or preventing the spin- entry motion and this effect was qualitatively the same as it was for the fully developed spin. Varying the configuration had little significant effect on the spin-entry characteristics. Brief tests conducted with the model in the Langley spin tunnel indicated that fully developed spins were obtainable at the forward center-of-gravity location and that spins were highly unlikely at the rearward center-of-location.

  4. Spin microscope based on optically detected magnetic resonance

    DOEpatents

    Berman, Gennady P.; Chernobrod, Boris M.

    2007-12-11

    The invention relates to scanning magnetic microscope which has a photoluminescent nanoprobe implanted in the tip apex of an atomic force microscope (AFM), a scanning tunneling microscope (STM) or a near-field scanning optical microscope (NSOM) and exhibits optically detected magnetic resonance (ODMR) in the vicinity of unpaired electron spins or nuclear magnetic moments in the sample material. The described spin microscope has demonstrated nanoscale lateral resolution and single spin sensitivity for the AFM and STM embodiments.

  5. Spin microscope based on optically detected magnetic resonance

    DOEpatents

    Berman, Gennady P.; Chernobrod, Boris M.

    2010-06-29

    The invention relates to scanning magnetic microscope which has a photoluminescent nanoprobe implanted in the tip apex of an atomic force microscope (AFM), a scanning tunneling microscope (STM) or a near-field scanning optical microscope (NSOM) and exhibits optically detected magnetic resonance (ODMR) in the vicinity of unpaired electron spins or nuclear magnetic moments in the sample material. The described spin microscope has demonstrated nanoscale lateral resolution and single spin sensitivity for the AFM and STM embodiments.

  6. Spin microscope based on optically detected magnetic resonance

    DOEpatents

    Berman, Gennady P.; Chernobrod, Boris M.

    2010-07-13

    The invention relates to scanning magnetic microscope which has a photoluminescent nanoprobe implanted in the tip apex of an atomic force microscope (AFM), a scanning tunneling microscope (STM) or a near-field scanning optical microscope (NSOM) and exhibits optically detected magnetic resonance (ODMR) in the vicinity of unpaired electron spins or nuclear magnetic moments in the sample material. The described spin microscope has demonstrated nanoscale lateral resolution and single spin sensitivity for the AFM and STM embodiments.

  7. Spin microscope based on optically detected magnetic resonance

    DOEpatents

    Berman, Gennady P.; Chernobrod, Boris M.

    2009-10-27

    The invention relates to scanning magnetic microscope which has a photoluminescent nanoprobe implanted in the tip apex of an atomic force microscope (AFM), a scanning tunneling microscope (STM) or a near-field scanning optical microscope (NSOM) and exhibits optically detected magnetic resonance (ODMR) in the vicinity of unpaired electron spins or nuclear magnetic moments in the sample material. The described spin microscope has demonstrated nanoscale lateral resolution and single spin sensitivity for the AFM and STM embodiments.

  8. Spin microscope based on optically detected magnetic resonance

    SciTech Connect

    Berman, Gennady P.; Chernobrod, Boris M.

    2009-11-10

    The invention relates to scanning magnetic microscope which has a photoluminescent nanoprobe implanted in the tip apex of an atomic force microscope (AFM), a scanning tunneling microscope (STM) or a near-field scanning optical microscope (NSOM) and exhibits optically detected magnetic resonance (ODMR) in the vicinity of impaired electron spins or nuclear magnetic moments in the sample material. The described spin microscope has demonstrated nanoscale lateral resolution and single spin sensitivity for the AFM and STM embodiments.

  9. An evaluation of aerodynamics modeling of spinning light airplanes

    NASA Technical Reports Server (NTRS)

    Pamadi, B. N.; Taylor, L. W., Jr.

    1983-01-01

    This paper extends the application of the modified strip theory for wing body combination of a spinning light airplane reported earlier. In addition, to account for the contribution of the tail plane, the shielding effect on vertical tail under steady state spin condition is modeled from basic aerodynamic considerations. The results of this combined analysis, presented for some light airplane configurations, are shown to be in good agreement with spin tunnel rotary balance test data.

  10. The cryogenic wind tunnel

    NASA Technical Reports Server (NTRS)

    Kilgore, R. A.

    1976-01-01

    Based on theoretical studies and experience with a low speed cryogenic tunnel and with a 1/3-meter transonic cryogenic tunnel, the cryogenic wind tunnel concept was shown to offer many advantages with respect to the attainment of full scale Reynolds number at reasonable levels of dynamic pressure in a ground based facility. The unique modes of operation available in a pressurized cryogenic tunnel make possible for the first time the separation of Mach number, Reynolds number, and aeroelastic effects. By reducing the drive-power requirements to a level where a conventional fan drive system may be used, the cryogenic concept makes possible a tunnel with high productivity and run times sufficiently long to allow for all types of tests at reduced capital costs and, for equal amounts of testing, reduced total energy consumption in comparison with other tunnel concepts.

  11. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

    2014-09-01

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

  12. Assisted tunneling in ferromagnetic junctions and half-metallic oxides

    NASA Astrophysics Data System (ADS)

    Bratkovsky, A. M.

    1998-05-01

    Different mechanisms of spin-dependent tunneling are analyzed with respect to their role in tunnel magnetoresistance (TMR). Microscopic calculation within a realistic model shows that direct tunneling in iron group systems leads to about a 30% change in resistance, which is close but lower than experimentally observed values. The larger observed values of the TMR might be a result of tunneling involving surface polarized states. It is found that tunneling via resonant defect states in the barrier radically decreases the TMR by order of magnitude. One-magnon emission is shown to reduce the TMR, whereas phonons increase the effect. The inclusion of both magnons and phonons reasonably explains an unusual bias dependence of the TMR. The model presented here is applied qualitatively to half metallics with 100% spin polarization, where one-magnon processes are suppressed and the change in resistance in the absence of spin mixing on impurities may be arbitrarily large. Even in the case of imperfect magnetic configurations, the resistance change can be a few 1000%. Examples of half-metallic systems are CrO2/TiO2 and CrO2/RuO2.

  13. Spin-thermoelectric transport induced by interactions and spin-flip processes in two-dimensional topological insulators

    NASA Astrophysics Data System (ADS)

    Ronetti, Flavio; Vannucci, Luca; Dolcetto, Giacomo; Carrega, Matteo; Sassetti, Maura

    2016-04-01

    We consider thermoelectric transport properties of the edge states of a two-dimensional topological insulator in a double quantum point contact geometry coupled to two thermally biased reservoirs. Both spin-preserving and spin-flipping tunneling processes between opposite edges are analyzed in the presence of electron-electron interactions. We demonstrate that the simultaneous presence of spin-flipping processes and interactions gives rise to a finite longitudinal spin current. Moreover, its sign and amplitude can be tuned by means of gate voltages with the possibility to generate a pure spin current, with a vanishing charge current.

  14. Charge Islands Through Tunneling

    NASA Technical Reports Server (NTRS)

    Robinson, Daryl C.

    2002-01-01

    It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

  15. Inelastic tunnel diodes

    NASA Technical Reports Server (NTRS)

    Anderson, L. M. (Inventor)

    1984-01-01

    Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

  16. Resonance enhanced tunneling

    NASA Astrophysics Data System (ADS)

    Matsumoto, S.; Yoshimura, M.

    2000-12-01

    Time evolution of tunneling in thermal medium is examined using the real-time semiclassical formalism previously developed. Effect of anharmonic terms in the potential well is shown to give a new mechanism of resonance enhanced tunneling. If the friction from environment is small enough, this mechanism may give a very large enhancement for the tunneling rate. The case of the asymmetric wine bottle potential is worked out in detail.

  17. Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins

    NASA Astrophysics Data System (ADS)

    Flatté, Michael E.

    Transport of carriers through disordered electronic energy landscapes occurs via hopping or tunneling through various sites, and can enhance the effects of carrier spin dynamics on the transport. When incoherent hopping preserves the spin orientation of carriers, the magnetic-field-dependent correlations between pairs of spins influence the charge conductivity of the material. Examples of these phenomena have been identified in hopping transport in organic semiconductors and colloidal quantum dots, as well as tunneling through oxide barriers in complex oxide devices, among other materials. The resulting room-temperature magnetic field effects on the conductivity or electroluminescence require external fields of only a few milliTesla. These magnetic field effects can be dramatically modified by changes in the local spin environment. Recent theoretical and experimental work has identified a regime for low-field magnetoresistance in organic semiconductors in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere1. The regime is studied experimentally by the controlled addition of localized electronic spins, through the addition of a stable free radical (galvinoxyl) to a material (MEH-PPV) that exhibits substantial room-temperature magnetoresistance (20 initially suppressed by the doping, as the localized electronic spin mixes one of the two spins whose correlation controls the transport. At intermediate doping, when one spin is fully decohered but the other is not, there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppressed as both spins that control the charge conductivity of the material are mixed. The behavior is described within a theoretical model describing the effect of carrier spin dynamics on the current. Generalizations to amorphous and other disordered crystalline semiconductors will also be described. This work was

  18. Half-metallic magnetism and the search for better spin valves

    SciTech Connect

    Everschor-Sitte, Karin; Sitte, Matthias; MacDonald, Allan H.

    2014-08-28

    We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First, we show that a mechanism in which spin valve performance at finite temperatures is limited by uncorrelated thermal fluctuations of magnetization orientations on opposite sides of a tunnel junction is in good agreement with recent studies of the temperature-dependent magnetoresistance of high quality tunnel junctions with MgO barriers. Using this insight, we propose a simple formula which captures the advantages for spin-valve optimization of using materials with a high spin polarization of Fermi-level tunneling electrons, and of using materials with high ferromagnetic transition temperatures. We conclude that half-metallic ferromagnets can yield better spin-value performance than current elemental transition metal ferromagnet/MgO systems only if their ferromagnetic transition temperatures exceed ∼950 K.

  19. Half-metallic magnetism and the search for better spin valves

    NASA Astrophysics Data System (ADS)

    Everschor-Sitte, Karin; Sitte, Matthias; MacDonald, Allan

    2015-03-01

    We propose a simple formula for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. It captures a mechanism in which spin valve performance at finite temperatures is limited by uncorrelated thermal fluctuations of magnetization orientations on opposite sides of a tunnel junction. Furthermore, it directly reveals the advantages for spin-valve optimization by using materials with a high spin polarization of Fermi-level tunneling electrons, and by using materials with high ferromagnetic transition temperatures. We show that our theory is in good agreement with recent experimental studies of the temperature-dependent magnetoresistance of high-quality tunnel junctions with MgO barriers. We conclude that half-metallic ferromagnets can yield better spin-value performance than current elemental transition metal ferromagnet/MgO systems only if their ferromagnetic transition temperatures exceed ~ 950 K .

  20. Tunnel closure calculations

    SciTech Connect

    Moran, B.; Attia, A.

    1995-07-01

    When a deeply penetrating munition explodes above the roof of a tunnel, the amount of rubble that falls inside the tunnel is primarily a function of three parameters: first the cube-root scaled distance from the center of the explosive to the roof of the tunnel. Second the material properties of the rock around the tunnel, and in particular the shear strength of that rock, its RQD (Rock Quality Designator), and the extent and orientation of joints. And third the ratio of the tunnel diameter to the standoff distance (distance between the center of explosive and the tunnel roof). The authors have used CALE, a well-established 2-D hydrodynamic computer code, to calculate the amount of rubble that falls inside a tunnel as a function of standoff distance for two different tunnel diameters. In particular they calculated three of the tunnel collapse experiments conducted in an iron ore mine near Kirkeness, Norway in the summer of 1994. The failure model that they used in their calculations combines an equivalent plastic strain criterion with a maximum tensile strength criterion and can be calibrated for different rocks using cratering data as well as laboratory experiments. These calculations are intended to test and improve the understanding of both the Norway Experiments and the ACE (Array of conventional Explosive) phenomenology.

  1. Atom Tunneling in Chemistry.

    PubMed

    Meisner, Jan; Kästner, Johannes

    2016-04-25

    Quantum mechanical tunneling of atoms is increasingly found to play an important role in many chemical transformations. Experimentally, atom tunneling can be indirectly detected by temperature-independent rate constants at low temperature or by enhanced kinetic isotope effects. In contrast, the influence of tunneling on the reaction rates can be monitored directly through computational investigations. The tunnel effect, for example, changes reaction paths and branching ratios, enables chemical reactions in an astrochemical environment that would be impossible by thermal transition, and influences biochemical processes. PMID:26990917

  2. Giant magnetoresistance in organic spin-valves.

    PubMed

    Xiong, Z H; Wu, Di; Vardeny, Z Valy; Shi, Jing

    2004-02-26

    A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling magnetoresistance in metallic spin valves have revolutionized applications such as magnetic recording and memory, and launched the new field of spin electronics--'spintronics'. Intense research efforts are now devoted to extending these spin-dependent effects to semiconductor materials. But while there have been noteworthy advances in spin injection and detection using inorganic semiconductors, spin-valve devices with semiconducting spacers have not yet been demonstrated. pi-conjugated organic semiconductors may offer a promising alternative approach to semiconductor spintronics, by virtue of their relatively strong electron-phonon coupling and large spin coherence. Here we report the injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure, yielding low-temperature giant magnetoresistance effects as large as 40 per cent. PMID:14985756

  3. Fermions tunneling from a general static Riemann black hole

    NASA Astrophysics Data System (ADS)

    Chen, Ge-Rui; Huang, Yong-Chang

    2015-05-01

    In this paper we investigate the tunneling of fermions from a general static Riemann black hole by following Kerner and Mann (Class Quantum Gravit 25:095014, 2008a; Phys Lett B 665:277-283, 2008b) methods. By applying the WKB approximation and the Hamilton-Jacobi ansatz to the Dirac equation, we obtain the standard Hawking temperature. Furthermore, Kerner and Mann (Class Quantum Gravit 25:095014, 2008a; Phys Lett B 665:277-283, 2008b) only calculated the tunneling spectrum of the Dirac particles with spin-up, and we extend the methods to investigate the tunneling of Dirac particles with arbitrary spin directions and also obtain the expected Hawking temperature. Our result provides further evidence for the universality of black hole radiation.

  4. Large amplitude spin torque vortex oscillations at zero external field using a perpendicular spin polarizer

    SciTech Connect

    Dussaux, A.; Rache Salles, B.; Jenkins, A. S.; Bortolotti, P.; Grollier, J.; Cros, V.; Fert, A.; Khvalkovskiy, A. V.; Kubota, H.; Fukushima, A.; Yakushiji, K.; Yuasa, S.

    2014-07-14

    We investigate the microwave response of a spin transfer vortex based oscillator in a magnetic tunnel junction with an in-plane reference layer combined with a spin valve with an out-of-plane magnetization spin polarizing layer. The main advantage of this perpendicular spin polarizer is to induce a large spin transfer force even at zero magnetic field, thus leading to a record emitted power (up to 0.6 μW) associated to a very narrow spectral linewidth of a few hundreds of kHz. The characteristics of this hybrid vortex based spin transfer nano-oscillator obtained at zero field and room temperature are of great importance for applications based on rf spintronic devices as integrated and tunable microwave source and/or microwave detector.

  5. Spin-controlled mechanics in nanoelectromechanical systems

    NASA Astrophysics Data System (ADS)

    Radić, D.

    2015-03-01

    We consider a dc-electronic tunneling transport through a carbon nanotube suspended between normal-metal source and arbitrarily spin-polarized drain lead in the presence of an external magnetic field. We show that magnetomotive coupling between electrical current through the nanotube and its mechanical vibrations may lead to an electromechanical instability and give an onset of self-excited mechanical vibrations depending on spin polarization of the drain lead and frequency of vibrations. The self-excitation mechanism is based on correlation between the occupancy of quantized Zeeman-split electronic states in the nanotube and the direction of velocity of its mechanical motion. It is an effective gating effect by the presence of electron in the spin state which, through the Coulomb blockade, permits tunneling of electron to the drain predominantly only during a particular phase of mechanical vibration thus coherently changing mechanical momentum and leading into instability if mechanical damping is overcome.

  6. Spin transport properties of a quantum dot coupled to ferromagnetic leads with noncollinear magnetizations.

    PubMed

    Zhang, Hao; Zhang, Guang-Ming; Yu, Lu

    2009-04-15

    A correct general formula for the spin current through an interacting quantum dot coupled to ferromagnetic leads with magnetization at an arbitrary angle θ is derived within the framework of the Keldysh formalism. Under asymmetric conditions, the spin current component J(z) may change sign for 0<θ<π. It is shown that the spin current and spin tunneling magnetoresistance exhibit different angle dependence in the free and Coulomb blockade regimes. In the latter case, the competition of the spin precession and the spin-valve effect could lead to an anomaly in the angle dependence of the spin current. PMID:21825366

  7. Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

    NASA Astrophysics Data System (ADS)

    Yan, Zhongbo; Wan, Shaolong

    2016-02-01

    Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance.

  8. Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions

    SciTech Connect

    Hatanaka, S.; Miwa, S. Matsuda, K.; Nawaoka, K.; Tanaka, K.; Morishita, H.; Goto, M.; Mizuochi, N.; Shinjo, T.; Suzuki, Y.

    2015-08-24

    We found that CoFeB|MgO|Ta tunnel junctions exhibit tunnel anisotropic magnetoresistance (TAMR) at room temperature. The tunnel junctions exhibit positive magnetoresistance with the application of a magnetic field normal to the film plane. The dependencies on the applied magnetic field angle and MgO thickness reveal that the magnetoresistance originates from the TAMR, caused by the spin polarization and the spin-orbit interaction at the CoFeB|MgO interface. We also found that the TAMR can be used to detect ferromagnetic resonance in the CoFeB. This detection method could be useful for the characterization of nanomagnets that are free from the spin-transfer effect and the stray field of a reference layer, unlike conventional magnetic tunnel junctions.

  9. Shotcrete in tunnel design

    SciTech Connect

    Golser, J.; Galler, R.; Schubert, P.; Rabensteiner, K.

    1995-12-31

    Shotcrete is an important structural element for tunnel support. Green shotcrete is exposed to compression strain rates and tunnel design requires a realistic material law for shotcrete. A modified rate of flow method simulates shotcrete behavior very well and can be incorporated in Finite Element calculations.

  10. Micromachined Tunneling Accelerometer

    NASA Technical Reports Server (NTRS)

    Kenny, Thomas W.; Waltman, Stephen B.; Kaiser, William J.; Reynolds, Joseph K.

    1993-01-01

    Separation of tunneling electrodes adjusted by varying electrostatic force. Major components of tunneling transducer formed on two silicon chips by microfabrication techniques. Use of electrostatic deflection reduces sensitivity of transducer to thermal drift and simplifies design. Sensitivity suitable for applications in which larger acceleration-sensing instruments required.

  11. The carpal tunnel.

    PubMed

    Ellis, Harold

    2009-12-01

    The carpal bones are deeply convex anteriorly. This bony gutter is converted by the flexor retinaculum into a tube - the carpal tunnel, which conveys the median nerve, together with the long flexor tendons of the fingers and thumb, into the hand. It is of special interest to the surgeon because it is the site of a common nerve entrapment, the carpal tunnel syndrome.

  12. Role of contact resistance in the effective spin relaxation rate in graphene spin valves

    NASA Astrophysics Data System (ADS)

    Stecklein, Gordon; Anugrah, Yoska; Li, Jing; Koester, Steven J.; Crowell, Paul

    Recent experiments (Maassen et al., PRB 86 235408 (2012), Idzuchi et al., PRB 91 241407(R) (2015)) have identified the role of finite contact resistances in determining the spin lifetime in graphene based on Hanle measurements of lateral spin valves. We have investigated this effect in spin valves fabricated using Co/AlOx tunnel barriers and graphene grown by chemical vapor deposition. By carrying out non-local spin valve and Hanle measurements over a wide range of gate voltages, we observe a variation in the spin signal that can be explained by the role of the contacts. Using the measured interface resistance, we quantify the degree of contact-induced spin sinking as the ratio of the contact resistance to the channel spin resistance and show that the variation in spin signal is explained by variation in this spin sinking parameter. By properly accounting for the effect of the contact resistance, we measure a spin lifetime that varies between 150-500 picoseconds. This work was supported by NSF ECCS-1124831, the NRI NEB program, and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

  13. Tunneling and Transport in Clean Ferromagnet-Superconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Wu, Chien-Te; Valls, Oriol; Halterman, Klaus

    2014-03-01

    We study charge and spin transport in clean Ferromagnet (F)-Superconductor (S) layered structures. By combining a transfer matrix method with a numerical self-consistent solution of the Bogoliubov-de Gennes (BdG) equations, we compute the spin dependent tunneling conductance in F-F-S trilayers in a range of exchange fields and layer thicknesses. In particular, we investigate the dependence of the tunneling conductance on the angle α between the magnetizations in two F layers. We find a variety of non-monotonic and switching behaviors in these heterostructures. We also present results for charge and spin transport in S-F-F-S Josephson junctions. C.-T. Wu and O. T. Valls are supported in part by IARPA under Grant No. N66001-12-1-2023. C.-T. Wu is also supported by the University of Minnesota's Doctoral Dissertation Fellowship.

  14. Thermal spin injection and accumulation in CoFe/MgO/n-type Ge contacts

    PubMed Central

    Jeon, Kun-Rok; Min, Byoung-Chul; Park, Seung-Young; Lee, Kyeong-Dong; Song, Hyon-Seok; Park, Youn-Ho; Jo, Young-Hun; Shin, Sung-Chul

    2012-01-01

    Understanding the interplay between spin and heat is a fundamental and intriguing subject. Here we report thermal spin injection and accumulation in CoFe/MgO/n-type Ge contacts with an asymmetry of tunnel spin polarization. Using local heating of electrodes by laser beam or electrical current, the thermally-induced spin accumulation is observed for both polarities of the temperature gradient across the tunnel contact. We observe that the magnitude of thermally injected spin signal scales linearly with the power of local heating of electrodes, and its sign is reversed as we invert the temperature gradient. A large Hanle magnetothermopower (HMTP) of about 7.0% and the Seebeck spin tunneling coefficient of larger than 0.74 meV K−1 are obtained at room temperature. PMID:23236584

  15. Charged fermions tunneling from regular black holes

    SciTech Connect

    Sharif, M. Javed, W.

    2012-11-15

    We study Hawking radiation of charged fermions as a tunneling process from charged regular black holes, i.e., the Bardeen and ABGB black holes. For this purpose, we apply the semiclassical WKB approximation to the general covariant Dirac equation for charged particles and evaluate the tunneling probabilities. We recover the Hawking temperature corresponding to these charged regular black holes. Further, we consider the back-reaction effects of the emitted spin particles from black holes and calculate their corresponding quantum corrections to the radiation spectrum. We find that this radiation spectrum is not purely thermal due to the energy and charge conservation but has some corrections. In the absence of charge, e = 0, our results are consistent with those already present in the literature.

  16. Gravitinos tunneling from traversable Lorentzian wormholes

    NASA Astrophysics Data System (ADS)

    Sakalli, I.; Ovgun, A.

    2015-09-01

    Recent research shows that Hawking radiation (HR) is also possible around the trapping horizon of a wormhole. In this article, we show that the HR of gravitino (spin-) particles from the traversable Lorentzian wormholes (TLWH) reveals a negative Hawking temperature (HT). We first introduce the TLWH in the past outer trapping horizon geometry (POTHG). Next, we derive the Rarita-Schwinger equations (RSEs) for that geometry. Then, using both the Hamilton-Jacobi (HJ) ansätz and the WKB approximation in the quantum tunneling method, we obtain the probabilities of the emission/absorption modes. Finally, we derive the tunneling rate of the emitted gravitino particles, and succeed to read the HT of the TLWH.

  17. Highly Efficient Room Temperature Spin Injection Using Spin Filtering in MgO

    NASA Astrophysics Data System (ADS)

    Jiang, Xin

    2007-03-01

    Efficient electrical spin injection into GaAs/AlGaAs quantum well structures was demonstrated using CoFe/MgO tunnel spin injectors at room temperature. The spin polarization of the injected electron current was inferred from the circular polarization of electroluminescence from the quantum well. Polarization values as high as 57% at 100 K and 47% at 290 K were obtained in a perpendicular magnetic field of 5 Tesla. The interface between the tunnel spin injector and the GaAs interface remained stable even after thermal annealing at 400 ^oC. The temperature dependence of the electron-hole recombination time and the electron spin relaxation time in the quantum well was measured using time-resolved optical techniques. By taking into account of these properties of the quantum well, the intrinsic spin injection efficiency can be deduced. We conclude that the efficiency of spin injection from a CoFe/MgO spin injector is nearly independent of temperature and, moreover, is highly efficient with an efficiency of ˜ 70% for the temperature range studied (10 K to room temperature). Tunnel spin injectors are thus highly promising components of future semiconductor spintronic devices. Collaborators: Roger Wang^1, 3, Gian Salis^2, Robert Shelby^1, Roger Macfarlane^1, Seth Bank^3, Glenn Solomon^3, James Harris^3, Stuart S. P. Parkin^1 ^1 IBM Almaden Research Center, San Jose, CA 95120 ^2 IBM Zurich Research Laboratory, S"aumerstrasse 4, 8803 R"uschlikon, Switzerland ^3 Solid States and Photonics Laboratory, Stanford University, Stanford, CA 94305

  18. Tunneling conductance studies in the ion-beam sputtered CoFe/Mg/MgO/NiFe magnetic tunnel junctions

    SciTech Connect

    Singh, Braj Bhusan; Chaudhary, Sujeet

    2013-06-03

    Magnetic tunnel junctions consisting of CoFe(10 nm)/Mg(1 nm)/MgO(3.5 nm)/NiFe(10 nm) are grown at room temperature using dual ion beam sputtering via in-situ shadow masking. The effective barrier thickness and average barrier height are estimated to be 3.5 nm (2.9 nm) and 0.69 eV (1.09 eV) at 290 K (70 K), respectively. The tunnel magnetoresistance value of 0.2 % and 2.3 % was observed at 290 K and 60 K, respectively. The temperature dependence of tunneling conductance revealed the presence of localized states present within the forbidden gap of the MgO barrier leading to finite inelastic spin independent tunneling contributions, which degrade the TMR value.

  19. Gate tunable spin transport in graphene with Rashba spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Tan, Xiao-Dong; Liao, Xiao-Ping; Sun, Litao

    2016-10-01

    Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

  20. Variable-Density Tunnel - Wind Tunnel #2

    NASA Technical Reports Server (NTRS)

    1923-01-01

    Underside of the Variable-Density Tunnel (VDT). The compressors are to the left. Circular screened cone is shown. The photographer was probably shooting film for Dr. Joseph Ames' Wilbur Wright Memorial Lecture given to the Royal Aeronautical Society on May 31, 1923.

  1. Variable-Density Tunnel - Wind Tunnel #2

    NASA Technical Reports Server (NTRS)

    1922-01-01

    Equipment used for pressurizing the Variable-Density Tunnel (VDT): The VDT tunnel is on the right; the compressors are on the left. Figure 4 in the NACA Technical Report 227 (Part 2) identifies each piece of equipment visible in this diagram. Immediately visible in the lower left corner is the Booster Compressor. In the right rear (behind the tunnel) is Primary Compressor No. 1. (Primary Compressor No. 2 is not visible.) From NACA TR 227 (Part 2):'The air is compressed in two or three stages, according to the terminal pressure in the tank. A two-stage primary compressor is used up to a terminal pressure of about seven atmospheres. For pressures above this a booster compressor is used in conjunction with the primary compressor. The booster compressor may be used also as an exhauster when it is desired to operate the tunnel at pressures below that of the atmosphere. The primary compressors are driven by 250-horsepower synchronous motors and the booster compressor by a 150-horsepower squirrel-cage induction motor.' Jerome Hunsaker wrote in 'Forty Years of Aeronautical Research': 'In June 1921, the executive committee [of the NACA] decided to build a new kind of wind tunnel. Utilizing compressed air, it would allow for *scale effects in aerodynamic model experiments. This tunnel represented the first bold step by the NACA to provide its research personnel with the novel, often complicated, and usually expensive equipment necessary to press forward the frontiers of aeronautical science. It was designed by Dr. Max Munk, formerly of G*ttingen.' Eastman Jacobs wrote in an article in a 1927 article for Aviation that: 'The tunnel is inclosed (sic) within a steel shell, so that the density of the air inside may be increased by pumping air into the shell to a pressure of 300 lb. per sq. in. A 250 hp. motor, driving a propeller, circulates the air, drawing it through the five-foot test section at a velocity of about fifty miles per hour. The model is mounted in the throat of

  2. Ultrafast scanning tunneling microscopy

    SciTech Connect

    Botkin, D.A. |

    1995-09-01

    I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

  3. Shape-dependent charge and spin transport through an electron waveguide

    NASA Astrophysics Data System (ADS)

    Ban, Yue; Sherman, E. Ya.

    2013-01-01

    We study electron transport in nanosized semiconductor waveguides of different shapes. The spin-dependent transport through these nonuniform nanostructures is investigated in the presence of spin-orbit coupling of the Rashba and Dresselhaus types. The resulting spin rotation strongly depends on the shape of the waveguide. The crossover from the classical motion to the tunneling regime can be controlled in the waveguide with narrowing by modulating the strength of the Rashba spin-orbit coupling.

  4. Enhancing Spin Filters by Use of Bulk Inversion Asymmetry

    NASA Technical Reports Server (NTRS)

    Ting, David; Cartoixa,Xavier

    2007-01-01

    Theoretical calculations have shown that the degrees of spin polarization in proposed nonmagnetic semiconductor resonant tunneling spin filters could be increased through exploitation of bulk inversion asymmetry (BIA). These enhancements would be effected through suitable orientation of spin collectors (or spin-polarization- inducing lateral electric fields), as described below. Spin filters -- more precisely, sources of spin-polarized electron currents -- have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-transport electronics). The proposed spin filters were to be based on the Rashba effect, which is an energy splitting of what would otherwise be degenerate quantum states, caused by a spinorbit interaction in conjunction with a structural-inversion asymmetry (SIA) in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. In a spin filter, the spin-polarized currents produced by the Rashba effect would be extracted by quantum-mechanical resonant tunneling.

  5. Transmission of excitations in a spin-1 Bose-Einstein condensate through a barrier

    SciTech Connect

    Watabe, Shohei; Kato, Yusuke

    2011-05-15

    We investigate tunneling of excitations across a potential barrier separating two spin-1 Bose-Einstein condensates. Using mean-field theory at absolute zero temperature, we determine the transmission coefficients of excitations in the saturated magnetization state and unsaturated magnetization states. All excitations, except the quadrupolar spin mode in the saturated magnetization state, show the anomalous tunneling phenomenon characterized as perfect tunneling in the low-momentum limit through a potential barrier. The quadrupolar spin mode in the saturated magnetization state, whose spectrum is massive, shows total reflection. We discuss properties common between excitations showing the anomalous tunneling phenomenon. Excitations showing perfect tunneling have a gapless spectrum in the absence of the magnetic field, and their wave functions in the low-energy limit are the same as the condensate wave function.

  6. Enhancing spin injection efficiency through half-metallic miniband conduction in a spin-filter superlattice.

    PubMed

    Yang, Yi-Hang; Li, Lin; Liu, Fen; Gao, Zhi-Wei; Miao, Guo-Xing

    2016-02-10

    We theoretically and numerically studied the band structure and spin transport of electrons subject to a superlattice structure where magnetic semiconductor layers lie between normal semiconductor layers to form periodic spin-filter tunnel barriers. In this alternately deposited superlattice structure, due to the induced periodicity of the envelope wavefunctions, there are additional allowed and forbidden energy regions established, i.e. forming minibands that are far narrower than the conventional conduction bands. The number and thickness of the stacked potential profiles can finely tune these minibands. The spin dependent potential barriers also induce spin splitting at the bottom of each miniband, which generates strongly spin-dependent miniband conduction. Most strikingly, the lowest lying miniband is 100% spin-polarized mimicking a half-metallic behavior on this conduction channel. The total transmission electron current carries thus near-perfectly polarized spin currents when the superlattice falls into suitable miniband conduction regime. This half-metallic miniband enhanced spin-filtering capability paves the way to generate highly polarized spin current without incurring exponentially increased device impedance, as usually happens when only a single spin-filter barrier is applied. PMID:26761786

  7. Fermions tunneling of higher-dimensional Kerr-Anti-de Sitter black hole with one rotational parameter

    NASA Astrophysics Data System (ADS)

    Lin, Kai; Yang, ShuZheng

    2009-04-01

    The 1/2 spin fermions tunneling at the horizon of n-dimensional Kerr-Anti-de Sitter black hole with one rotational parameter is researched via semi-classical approximation method, and the Hawking temperature and fermions tunneling rate are obtained in this Letter. Using a new method, the semi-classical Hamilton-Jacobi equation is gotten from the Dirac equation in this Letter, and the work makes several quantum tunneling theories more harmonious.

  8. Exchange interaction of two spin qubits mediated by a superconductor

    NASA Astrophysics Data System (ADS)

    Hassler, Fabian; Catelani, Gianluigi; Bluhm, Hendrik

    2015-12-01

    Entangling two quantum bits by letting them interact is the crucial requirement for building a quantum processor. For qubits based on the spin of the electron, these two qubit gates are typically performed by exchange interaction of the electrons captured in two nearby quantum dots. Since the exchange interaction relies on tunneling of the electrons, the range of interaction for conventional approaches is severely limited as the tunneling amplitude decays exponentially with the length of the tunneling barrier. Here, we present an approach to couple two spin qubits via a superconducting coupler. In essence, the superconducting coupler provides a tunneling barrier for the electrons which can be tuned with exquisite precision. We show that as a result exchange couplings over a distance of several microns become realistic, thus enabling flexible designs of multiqubit systems.

  9. Spin-orbit coupling at surfaces and 2D materials.

    PubMed

    Krasovskii, E E

    2015-12-16

    Spin-orbit interaction gives rise to a splitting of surface states via the Rashba effect, and in topological insulators it leads to the existence of topological surface states. The resulting k(//) momentum separation between states with the opposite spin underlies a wide range of new phenomena at surfaces and interfaces, such as spin transfer, spin accumulation, spin-to-charge current conversion, which are interesting for fundamental science and may become the basis for a breakthrough in the spintronic technology. The present review summarizes recent theoretical and experimental efforts to reveal the microscopic structure and mechanisms of spin-orbit driven phenomena with the focus on angle and spin-resolved photoemission and scanning tunneling microscopy. PMID:26580290

  10. Spin-orbit coupling at surfaces and 2D materials.

    PubMed

    Krasovskii, E E

    2015-12-16

    Spin-orbit interaction gives rise to a splitting of surface states via the Rashba effect, and in topological insulators it leads to the existence of topological surface states. The resulting k(//) momentum separation between states with the opposite spin underlies a wide range of new phenomena at surfaces and interfaces, such as spin transfer, spin accumulation, spin-to-charge current conversion, which are interesting for fundamental science and may become the basis for a breakthrough in the spintronic technology. The present review summarizes recent theoretical and experimental efforts to reveal the microscopic structure and mechanisms of spin-orbit driven phenomena with the focus on angle and spin-resolved photoemission and scanning tunneling microscopy.

  11. Theory of the ac spin-valve effect.

    PubMed

    Kochan, Denis; Gmitra, Martin; Fabian, Jaroslav

    2011-10-21

    The spin-valve complex magnetoimpedance of symmetric ferromagnet-normal-metal-ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance-the real part difference of the impedances of the parallel and antiparallel magnetization configurations-exhibits an overall damped oscillatory behavior, as an interplay of the diffusion and spin relaxation times. In wide junctions the ac magnetoresistance oscillates between positive and negative values, reflecting resonant amplification and depletion of the spin accumulation, while the line shape for thin tunnel junctions is predicted to be purely Lorentzian. The ac spin-valve effect could be a technique to extract spin transport and spin relaxation parameters in the absence of a magnetic field and for a fixed sample size. PMID:22107552

  12. Carpal Tunnel Syndrome

    MedlinePlus

    ... through NIH's National Center for Complementary and Alternative Medicine are investigating the effects of acupuncture on pain, loss of median nerve function, and changes in the brain associated with carpal tunnel syndrome. In addition, a ...

  13. TOPICAL REVIEW: Recognition tunneling

    NASA Astrophysics Data System (ADS)

    Lindsay, Stuart; He, Jin; Sankey, Otto; Hapala, Prokop; Jelinek, Pavel; Zhang, Peiming; Chang, Shuai; Huang, Shuo

    2010-07-01

    Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ('tethered molecule-pair' configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the 'free-analyte' configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules.

  14. Channel-tunnels.

    PubMed

    Koronakis, V; Andersen, C; Hughes, C

    2001-08-01

    TolC and its many homologues comprise an alpha-helical transperiplasmic tunnel embedded in the bacterial outer membrane by a contiguous beta-barrel channel, providing a large exit duct for diverse substrates. The 'channel-tunnel' is closed at its periplasmic entrance, but can be opened by an 'iris-like' mechanism when recruited by substrate-engaged proteins in the cytosolic membrane.

  15. The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

    NASA Technical Reports Server (NTRS)

    Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

    2010-01-01

    The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

  16. RHIC spin program

    SciTech Connect

    Bunce, G.

    1995-12-31

    Colliding beams of high energy polarized protons at RHIC is an excellent way to probe the polarization of gluons, u and d quarks in a polarized proton. RHIC is the Relativistic Heavy Ion Collider being built now at Brookhaven in the ISABELLE tunnel. It is designed to collide gold ions on gold ions at 100 GeV/nucleon. Its goal is to discover the quark-gluon plasma, and the first collisions are expected in March, 1999. RHIC will also make an ideal polarized proton collider with high luminosity and 250 GeV x 250 GeV collisions. The RHIC spin physics program is: (1) Use well-understood perturbative QCD probes to study non-perturbative confining dynamics in QCD. We will measure - gluon and sea quark polarization in a polarized proton, polarization of quarks in a transversely polarized proton. (2) Look for additional surprises using the first high energy polarized proton collider. We will - look for the expected maximal parity violation in W and Z boson production, - search for parity violation in other processes, - test parton models with spin. This lecture is organized around a few of the key ideas: Siberian Snakes--What are they? High energy proton-proton collisions are scatters of quarks and leptons, at high x, a polarized proton beam is a beam of polarized u quarks, quark and gluon collisions are very sensitive to spin. We will discuss two reactions: how direct photon production measures gluon polarization, and how W{sup +} boson production measures u and d quark polarization.

  17. Emerging magnetic stability in atomically assembled spin arrays

    NASA Astrophysics Data System (ADS)

    Loth, Sebastian; Baumann, Susanne; Lutz, Christopher P.; Eigler, D. M.; Heinrich, Andreas J.

    2012-02-01

    Magnetic stability is usually created by the interaction of a large ensemble of atomically small magnetic moments that are themselves unstable. We make use of the Scanning Tunneling Microscope's ability to move individual atoms and construct arrays of interacting spins. Owed to their smallness, the magnetic states of these spin arrays are quantized and we probe their energies by inelastic electron tunneling spectroscopy [1]. To gain access to the equally important dynamical properties we employ an all-electronic pump-probe measurement scheme with which we follow the evolution between the spin states at nanosecond speed [2]. The combination of energetic and dynamical information allows identification of the relevant spin interaction and spin relaxation mechanisms at the atomic level. We design arrangements of atoms that suppress quantum tunneling of magnetization and drastically stabilize different spin configurations. Tracing the emergence of magnetic stability in the progression from individual atoms to arrays of spins points to new avenues for spintronic applications at atomic dimensions. [4pt] [1] A. J. Heinrich, J. A. Gupta, C. P. Lutz, D. M. Eigler, Science 306 466 (2004).[0pt] [2] S. Loth, M. Etzkorn, C. P. Lutz, D. M. Eigler, A. J. Heinrich, Science 329 1628 (2010).

  18. Long spin lifetime and large barrier polarisation in single electron transport through a CoFe nanoparticle

    NASA Astrophysics Data System (ADS)

    Temple, R. C.; McLaren, M.; Brydson, R. M. D.; Hickey, B. J.; Marrows, C. H.

    2016-06-01

    We have investigated single electron spin transport in individual single crystal bcc Co30Fe70 nanoparticles using scanning tunnelling microscopy with a standard tungsten tip. Particles were deposited using a gas-aggregation nanoparticle source and individually addressed as asymmetric double tunnel junctions with both a vacuum and a MgO tunnel barrier. Spectroscopy measurements on the particles show a Coulomb staircase that is correlated with the measured particle size. Field emission tunnelling effects are incorporated into standard single electron theory to model the data. This formalism allows spin-dependent parameters to be determined even though the tip is not spin-polarised. The barrier spin polarisation is very high, in excess of 84%. By variation of the resistance, several orders of magnitude of the system timescale are probed, enabling us to determine the spin relaxation time on the island. It is found to be close to 10 μs, a value much longer than previously reported.

  19. Long spin lifetime and large barrier polarisation in single electron transport through a CoFe nanoparticle

    PubMed Central

    Temple, R. C.; McLaren, M.; Brydson, R. M. D.; Hickey, B. J.; Marrows, C. H.

    2016-01-01

    We have investigated single electron spin transport in individual single crystal bcc Co30Fe70 nanoparticles using scanning tunnelling microscopy with a standard tungsten tip. Particles were deposited using a gas-aggregation nanoparticle source and individually addressed as asymmetric double tunnel junctions with both a vacuum and a MgO tunnel barrier. Spectroscopy measurements on the particles show a Coulomb staircase that is correlated with the measured particle size. Field emission tunnelling effects are incorporated into standard single electron theory to model the data. This formalism allows spin-dependent parameters to be determined even though the tip is not spin-polarised. The barrier spin polarisation is very high, in excess of 84%. By variation of the resistance, several orders of magnitude of the system timescale are probed, enabling us to determine the spin relaxation time on the island. It is found to be close to 10 μs, a value much longer than previously reported. PMID:27329575

  20. Long spin lifetime and large barrier polarisation in single electron transport through a CoFe nanoparticle.

    PubMed

    Temple, R C; McLaren, M; Brydson, R M D; Hickey, B J; Marrows, C H

    2016-01-01

    We have investigated single electron spin transport in individual single crystal bcc Co30Fe70 nanoparticles using scanning tunnelling microscopy with a standard tungsten tip. Particles were deposited using a gas-aggregation nanoparticle source and individually addressed as asymmetric double tunnel junctions with both a vacuum and a MgO tunnel barrier. Spectroscopy measurements on the particles show a Coulomb staircase that is correlated with the measured particle size. Field emission tunnelling effects are incorporated into standard single electron theory to model the data. This formalism allows spin-dependent parameters to be determined even though the tip is not spin-polarised. The barrier spin polarisation is very high, in excess of 84%. By variation of the resistance, several orders of magnitude of the system timescale are probed, enabling us to determine the spin relaxation time on the island. It is found to be close to 10 μs, a value much longer than previously reported. PMID:27329575

  1. Cooper-pair injection into quantum spin Hall insulators.

    PubMed

    Sato, Koji; Loss, Daniel; Tserkovnyak, Yaroslav

    2010-11-26

    We theoretically study tunneling of Cooper pairs from a superconductor spanning a two-dimensional topological insulator strip into its helical edge states. The coherent low-energy electron-pair tunneling sets off positive current cross correlations along the edges, which reflect an interplay of two quantum-entanglement processes. Most importantly, superconducting spin pairing dictates a Cooper pair partitioning into the helical edge liquids, which transport electrons in opposite directions for opposite spin orientations. At the same time, Luttinger-liquid correlations fractionalize electrons injected at a given edge into counterpropagating charge pulses carrying definite fractions of the elementary electron charge.

  2. Microscopic understanding of spin current probed by shot noise

    NASA Astrophysics Data System (ADS)

    Arakawa, Tomonori

    The spin currents is one of key issue in the spintronics field and the generation and detection of those have been intensively studied by using various materials. The analysis of experiments, however, relies on phenomenological parameters such as spin relaxation length and spin flip time. The microscopic nature of the spin current such as energy distribution and energy relaxation mechanism, has not yet well understood. To establish a better microscopic understanding of spin currents, I focused on the shot noise measurement which is well established technique in the field of mesoscopic physics [Y. M. Blanter and M. B üttiker, Phys. Rep. 336, 1 (2000).]. Although there are many theoretically works about shot noise in the presence of spin currents, for example detection of spin accumulation [J. Meair, P. Stano, and P. Jacquod, Phys. Rev. B 84 (2011).], estimation of spin flip currents, and so on, these predictions have never been experimentally confirmed. In this context, we reported the first experimental detention of shot noise in the presence of the spin accumulation in a (Ga,Mn)As/tunnel barrier/n-GaAs based lateral spin valve device [T. Arakawa et al., Phys. Rev. Lett. 114, 016601 (2015).]. Together with this result, we found however that the effective temperature of the spin current drastically increases due to the spin injection process. This heating of electron system could be a big problem to realize future spin current devices by using quantum coherence, because the effective temperature rise directly related to the destruction of the coherence of the spin current. Therefore, then we focused on the mechanism of this heating and the energy relaxation in a diffusive channel. By measuring current noise and the DC offset voltage in the usual non-local spin valve signal as a function of the spin diffusion channel length, we clarified that the electron-electron interaction length, which is the characteristic length for the relaxation of the electron system, is

  3. Spin ejector

    DOEpatents

    Andersen, John A.; Flanigan, John J.; Kindley, Robert J.

    1978-01-01

    The disclosure relates to an apparatus for spin ejecting a body having a flat plate base containing bosses. The apparatus has a base plate and a main ejection shaft extending perpendicularly from the base plate. A compressible cylindrical spring is disposed about the shaft. Bearings are located between the shaft and the spring. A housing containing a helical aperture releasably engages the base plate and surrounds the shaft bearings and the spring. A piston having an aperture follower disposed in the housing aperture is seated on the spring and is guided by the shaft and the aperture. The spring is compressed and when released causes the piston to spin eject the body.

  4. Interface Composition in Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Mayen, Kether; McCord, Jeff; Allen, Drew; Schad, Rainer; Wang, Dexin; Tondra, Mark; Yang, Dehua

    2000-03-01

    The magnetoresistance of magnetic tunnel junctions is given by the spin dependence of the electron transfer across the insulator layer. As such, its magnitude critically depends on the spin polarization at the interfaces between the magnetic electrodes and the insulator. These properties will, naturally, depend on the exact composition at the interfaces. The way in which the insulator layers of tunnel junctions are commonly produced (oxidation of a Al layer) leads to ambiguities in the exact interface composition. We studied the chemical properties, using high-resolution XPS, of ferromagnet/AlOx interfaces. The samples had a Al layer the thickness of which varied between 0.6 and 1.8nm. The homogeneous oxidation process applied to those samples resulted in an oxygen overexposure or underexposure for respectively the thin and the thick Al end of the samples. We have studied the concentrations of elementary and oxidized Al, Co, Ni and Fe for various composition and roughness of the ferromagnetic layer. The amount of elementary Al we find as function of the original Al thickness gives insight into the Al oxidation process. However, within the sensitivity of the analysis technique, we did not observe oxidation of the ferromagnetic layers, even for the overoxidized end of the samples.

  5. Inelastic electron tunneling spectroscopy for topological insulators.

    PubMed

    She, Jian-Huang; Fransson, Jonas; Bishop, A R; Balatsky, Alexander V

    2013-01-11

    Inelastic electron tunneling spectroscopy is a powerful spectroscopy that allows one to investigate the nature of local excitations and energy transfer in the system of interest. We study inelastic electron tunneling spectroscopy for topological insulators and investigate the role of inelastic scattering on the Dirac node states on the surface of topological insulators. Local inelastic scattering is shown to significantly modify the Dirac node spectrum. In the weak coupling limit, peaks and steps are induced in second derivative d2I/dV2. In the strong coupling limit, the local negative-U centers are formed at impurity sites, and the Dirac cone structure is fully destroyed locally. At intermediate coupling, resonance peaks emerge. We map out the evolution of the resonance peaks from weak to strong coupling, which interpolate nicely between the two limits. There is a sudden qualitative change of behavior at intermediate coupling, indicating the possible existence of a local quantum phase transition. We also find that, even for a simple local phonon mode, the inherent coupling of spin and orbital degrees in topological insulators leads to the spin-polarized texture in inelastic Friedel oscillations induced by the local mode.

  6. The classical and quantum dynamics of molecular spins on graphene

    PubMed Central

    Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Ana; Luis, Fernando; Dressel, Martin; Rauschenbach, Stephan; Kern, Klaus; Burghard, Marko; Bogani, Lapo

    2015-01-01

    Controlling the dynamics of spins on surfaces is pivotal to the design of spintronic1 and quantum computing2 devices. Proposed schemes involve the interaction of spins with graphene to enable surface-state spintronics3,4, and electrical spin-manipulation4-11. However, the influence of the graphene environment on the spin systems has yet to be unraveled12. Here we explore the spin-graphene interaction by studying the classical and quantum dynamics of molecular magnets13 on graphene. While the static spin response remains unaltered, the quantum spin dynamics and associated selection rules are profoundly modulated. The couplings to graphene phonons, to other spins, and to Dirac fermions are quantified using a newly-developed model. Coupling to Dirac electrons introduces a dominant quantum-relaxation channel that, by driving the spins over Villain’s threshold, gives rise to fully-coherent, resonant spin tunneling. Our findings provide fundamental insight into the interaction between spins and graphene, establishing the basis for electrical spin-manipulation in graphene nanodevices. PMID:26641019

  7. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    PubMed Central

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  8. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  9. Spin-Hall-assisted magnetic random access memory

    SciTech Connect

    Brink, A. van den Swagten, H. J. M.; Koopmans, B.; Cosemans, S.; Manfrini, M.; Van Roy, W.; Min, T.; Cornelissen, S.; Vaysset, A.

    2014-01-06

    We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.

  10. Electrical detection of spin hyperpolarization in InP

    SciTech Connect

    Caspers, Christian; Ansermet, Jean-Philippe

    2014-09-29

    The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ{sub 0}H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.

  11. Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents

    NASA Astrophysics Data System (ADS)

    Linder, Jacob; Bathen, Marianne Etzelmüller

    2016-06-01

    It has recently been proposed and experimentally demonstrated that it is possible to generate large thermoelectric effects in ferromagnet/superconductor structures due to a spin-dependent particle-hole asymmetry. Here, we show theoretically that quasiparticle tunneling between two spin-split superconductors enhances the thermoelectric response manyfold compared to when only one such superconductor is used, generating Seebeck coefficients (S >1 mV/K) and figures of merit (Z T ≃40 ) far exceeding the best bulk thermoelectric materials, and it also becomes more resilient toward inelastic-scattering processes. We present a generalized Onsager response-matrix that takes into account spin-dependent voltage and temperature gradients. Moreover, we show that thermally induced spin currents created in such junctions, even in the absence of a polarized tunneling barrier, also become largest in the case in which spin-dependent particle-hole asymmetry exists on both sides of the barrier. We determine how these thermal spin-currents can be tuned both in magnitude and sign by several parameters, including the external field, the temperature, and the superconducting phase difference.

  12. Subsonic Aerodynamics of Spinning and Non-Spinning Type 200 Lightcraft: Progress Report

    NASA Astrophysics Data System (ADS)

    Kenoyer, David A.; Myrabo, Leik N.

    2010-05-01

    A combined experimental and numerical investigation of subsonic aerodynamics for Type 200 laser lightcraft is underway for both spinning and non-spinning cases. A 12.2 cm diameter aluminum model with a "closed" annular airbreathing inlet was fitted to a sting balance in RPI's 61 cm by 61 cm subsonic wind tunnel. Aerodynamic forces and moments were measured first for the non-spinning case vs. angle of attack, at several freestream flow velocities (e.g., 30, 45, and 60 m/s) to assess Reynolds number effects. The CFD analysis was performed for 0-180° angles of attack for a fixed coordinate system (i.e., non-spinning Type 200 model), and predictions compared favorably with the experimental data. In the near future, for the spinning case, a brushless electric motor has been installed to rotate the wind tunnel model at 3000 to 13,000 RPM; Magnus force effects upon the coefficients (Cd, Cl, and Cm) are expected to reveal interesting departures from the non-spinning database in forthcoming experiments.

  13. Band structure of topological insulators from noise measurements in tunnel junctions

    NASA Astrophysics Data System (ADS)

    Cascales Sandoval, Juan Pedro; Martinez, Isidoro; Guerrero, Ruben; Chang, Cui-Zu; Katmis, Ferhat; Moodera, Jagadeesh; Aliev, Farkhad

    The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunnelling and noise spectroscopy utilizing TI/Al2O3/Co tunnel junctions with bottom TI electrodes of either Bi2Te3 or Bi2Se3. We demonstrate that features related to the band structure of the TI materials show up in the tunnelling conductance and even more clearly through low frequency noise measurements. The bias dependence of 1/f noise reveals peaks at specific energies corresponding to band structure features of the TI. TI tunnel junctions could thus simplify the study of the properties of such quantum coherent systems that can further lead to the manipulation of their spin-polarized properties for technological purposes.

  14. Magneto-Transport and Nanomagnet Dynamics in MgO-Based Magnetic Tunnel Junctions (MTJs)

    NASA Astrophysics Data System (ADS)

    Ghobadi, Nader; Daqiq, Reza

    2016-02-01

    We investigate bias and different barrier thicknesses effects on quantities related to spin and charge currents in MgO-based magnetic tunnel junctions. Using the non-Equilibrium Green's function formalism, we demonstrate that the in-plane and out-of-plane components of the spin-transfer torque have asymmetric and symmetric behaviors respectively. Magneto-resistance also decreases with increasing barrier thickness. The Landau–Lifshits–Gilbert equation describes the dynamics of the magnetization made by spin transfer torque. Increasing in spin current above its critical value or smaller the magnet reduces the switching time which is major result for making of new memory devices.

  15. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    NASA Astrophysics Data System (ADS)

    Kaiju, Hideo; Takei, Masashi; Misawa, Takahiro; Nagahama, Taro; Nishii, Junji; Xiao, Gang

    2015-09-01

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.

  16. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    SciTech Connect

    Kaiju, Hideo Takei, Masashi; Misawa, Takahiro; Nishii, Junji; Nagahama, Taro; Xiao, Gang

    2015-09-28

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.

  17. Tunneling into and between helical edge states: Fermionic approach

    NASA Astrophysics Data System (ADS)

    Aristov, D. N.; Niyazov, R. A.

    2016-07-01

    We study the four-terminal junction of spinless Luttinger liquid wires, which describes either a corner junction of two helical edge states of topological insulators or the tunneling from the spinful wire into the helical edge state. We use the fermionic representation and the scattering state formalism, in order to compute the renormalization group (RG) equations for the linear response conductances. We establish our approach by considering a junction between two possibly nonequivalent helical edge states and find an agreement with the earlier analysis of this situation. Tunneling from the tip of the spinful wire to the edge state is further analyzed which requires some modification of our formalism. In the latter case we demonstrate (i) the existence of both fixed lines and conventional fixed points of RG equations, and (ii) certain proportionality relations holding for conductances during renormalization. The scaling exponents and phase portraits are obtained in all cases.

  18. Holders for in situ treatments of scanning tunneling microscopy tips.

    PubMed

    Ishida, Nobuyuki; Subagyo, Agus; Ikeuchi, Akira; Sueoka, Kazuhisa

    2009-09-01

    We have developed holders for scanning tunneling microscopy tips that can be used for in situ treatments of the tips, such as electron bombardment (EB) heating, ion sputtering, and the coating of magnetic materials. The holders can be readily installed into the transfer paths and do not require any special type of base stages. Scanning electron microscopy is used to characterize the tip apex after EB heating. Also, spin-polarized scanning tunneling spectroscopy using an Fe coated W tip on the Cr(001) single crystal surface is performed in order to confirm both the capability of heating a tip up to about 2200 K and the spin sensitivity of the magnetically coated tip.

  19. Circular polarization in a non-magnetic resonant tunneling device.

    PubMed

    Dos Santos, Lara F; Gobato, Yara Galvão; Teodoro, Márcio D; Lopez-Richard, Victor; Marques, Gilmar E; Brasil, Maria Jsp; Orlita, Milan; Kunc, Jan; Maude, Duncan K; Henini, Mohamed; Airey, Robert J

    2011-01-01

    We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. PMID:21711613

  20. Uncooled tunneling infrared sensor

    NASA Technical Reports Server (NTRS)

    Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

    1995-01-01

    An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

  1. 203. Lickstone Ridge Tunnel. All but three of the tunnel ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    203. Lickstone Ridge Tunnel. All but three of the tunnel have minimum height of 13, which accommodates most large recreational vehicles. This tunnel has the lowest clearance at 11-3. - Blue Ridge Parkway, Between Shenandoah National Park & Great Smoky Mountains, Asheville, Buncombe County, NC

  2. View down tank tunnel (tunnel no. 2) showing pipes and ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    View down tank tunnel (tunnel no. 2) showing pipes and walkway of metal grating, side tunnel to tank 3 is on the left - U.S. Naval Base, Pearl Harbor, Diesel Purification Plant, North Road near Pierce Street, Pearl City, Honolulu County, HI

  3. Massive vector particles tunneling from Kerr and Kerr-Newman black holes

    NASA Astrophysics Data System (ADS)

    Li, Xiang-Qian; Chen, Ge-Rui

    2015-12-01

    In this paper, we investigate the Hawking radiation of massive spin-1 particles from 4-dimensional Kerr and Kerr-Newman black holes. By applying the Hamilton-Jacobi ansatz and the WKB approximation to the field equations of the massive bosons in Kerr and Kerr-Newman space-time, the quantum tunneling method is successfully implemented. As a result, we obtain the tunneling rate of the emitted vector particles and recover the standard Hawking temperature of both the two black holes.

  4. Aorto-ventricular tunnel.

    PubMed

    McKay, Roxane

    2007-10-08

    Aorto-ventricular tunnel is a congenital, extracardiac channel which connects the ascending aorta above the sinutubular junction to the cavity of the left, or (less commonly) right ventricle. The exact incidence is unknown, estimates ranging from 0.5% of fetal cardiac malformations to less than 0.1% of congenitally malformed hearts in clinico-pathological series. Approximately 130 cases have been reported in the literature, about twice as many cases in males as in females. Associated defects, usually involving the proximal coronary arteries, or the aortic or pulmonary valves, are present in nearly half the cases. Occasional patients present with an asymptomatic heart murmur and cardiac enlargement, but most suffer heart failure in the first year of life. The etiology of aorto-ventricular tunnel is uncertain. It appears to result from a combination of maldevelopment of the cushions which give rise to the pulmonary and aortic roots, and abnormal separation of these structures. Echocardiography is the diagnostic investigation of choice. Antenatal diagnosis by fetal echocardiography is reliable after 18 weeks gestation. Aorto-ventricular tunnel must be distinguished from other lesions which cause rapid run-off of blood from the aorta and produce cardiac failure. Optimal management of symptomatic aorto-ventricular tunnel consists of diagnosis by echocardiography, complimented with cardiac catheterization as needed to elucidate coronary arterial origins or associated defects, and prompt surgical repair. Observation of the exceedingly rare, asymptomatic patient with a small tunnel may be justified by occasional spontaneous closure. All patients require life-long follow-up for recurrence of the tunnel, aortic valve incompetence, left ventricular function, and aneurysmal enlargement of the ascending aorta.

  5. Photon induced tunneling of electron through a graphene electrostatic barrier

    NASA Astrophysics Data System (ADS)

    Biswas, R.; Sinha, C.

    2013-11-01

    The influence of an external intense laser field on the tunneling transport (ballistic) of the Dirac fermions through a monolayer graphene electrostatic barrier is studied in the framework of the Floquet approach for a continuous wave, linearly polarized, monochromatic laser. The Klein tunneling is shown to be suppressed by the irradiation of a strong laser field, arising due to breaking of chiral symmetry. The symmetric nature of the field free angular transmission spectrum around the normal to the well-barrier interface is destroyed due to the additional coupling between the pseudo-spin and the time dependent vector potential. The energy distribution of the tunneling spectrum displays Fano resonance which is absent for a laser assisted conventional electrostatic barrier but similar to the case of quantum well structures, providing an optical tool to identify field free quasi bound states inside the graphene nanostructures.

  6. Probing spin-flip scattering in ballistic nanosystems.

    PubMed

    Zeng, Z M; Feng, J F; Wang, Y; Han, X F; Zhan, W S; Zhang, X-G; Zhang, Z

    2006-09-01

    Because spin-flip length is longer than the electron mean-free path in a metal, past studies of spin-flip scattering are limited to the diffusive regime. We propose to use a magnetic double barrier tunnel junction to study spin-flip scattering in the nanometer sized spacer layer near the ballistic limit. We extract the voltage and temperature dependence of the spin-flip conductance Gs in the spacer layer from magnetoresistance measurements. In addition to spin scattering information including the mean-free path (70 nm) and the spin-flip length (1.0-2.6 microm) at 4.2 K, this technique also yields information on the density of states and quantum well resonance in the spacer layer. PMID:17025839

  7. Quantum engineering of spin and anisotropy in magnetic molecular junctions.

    PubMed

    Jacobson, Peter; Herden, Tobias; Muenks, Matthias; Laskin, Gennadii; Brovko, Oleg; Stepanyuk, Valeri; Ternes, Markus; Kern, Klaus

    2015-01-01

    Single molecule magnets and single spin centres can be individually addressed when coupled to contacts forming an electrical junction. To control and engineer the magnetism of quantum devices, it is necessary to quantify how the structural and chemical environment of the junction affects the spin centre. Metrics such as coordination number or symmetry provide a simple method to quantify the local environment, but neglect the many-body interactions of an impurity spin coupled to contacts. Here, we utilize a highly corrugated hexagonal boron nitride monolayer to mediate the coupling between a cobalt spin in CoHx (x=1,2) complexes and the metal contact. While hydrogen controls the total effective spin, the corrugation smoothly tunes the Kondo exchange interaction between the spin and the underlying metal. Using scanning tunnelling microscopy and spectroscopy together with numerical simulations, we quantitatively demonstrate how the Kondo exchange interaction mimics chemical tailoring and changes the magnetic anisotropy. PMID:26456084

  8. Tunneling in axion monodromy

    NASA Astrophysics Data System (ADS)

    Brown, Jon; Cottrell, William; Shiu, Gary; Soler, Pablo

    2016-10-01

    The Coleman formula for vacuum decay and bubble nucleation has been used to estimate the tunneling rate in models of axion monodromy in recent literature. However, several of Coleman's original assumptions do not hold for such models. Here we derive a new estimate with this in mind using a similar Euclidean procedure. We find that there are significant regions of parameter space for which the tunneling rate in axion monodromy is not well approximated by the Coleman formula. However, there is also a regime relevant to large field inflation in which both estimates parametrically agree. We also briefly comment on the applications of our results to the relaxion scenario.

  9. Tunneling anisotropic magnetoresistance driven by resonant surface states: first-principles calculations on an Fe(001) surface.

    PubMed

    Chantis, Athanasios N; Belashchenko, Kirill D; Tsymbal, Evgeny Y; van Schilfgaarde, Mark

    2007-01-26

    Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. We find that spin-flip scattering at the interface is controlled not only by the strength of the spin-orbit coupling, but depends strongly on the intrinsic width of the resonant surface states. PMID:17358794

  10. Quantum Fluctuations of Local Magnetoresistance in Organic Spin Valves

    NASA Astrophysics Data System (ADS)

    Raikh, Mikhail; Roundy, Robert; Nemirovsky, Demitry; Kagalovsky, Victor

    2014-03-01

    Aside from interfacial effects, the performance of organic spin valves is limited by the spin memory loss in course of electron transport between the magnetized electrodes. One of the most prominent mechanisms of this loss is the spin precession in the random hyperfine fields of nuclei. We assume that the electron transport is due to incoherent multi-step tunneling. Then the precession takes place while electron ``waits'' for the subsequent tunneling step. While the spatial coherence of electron is lost after a single step, the spin evolution remains absolutely coherent all the way between the electrodes. As a result, the amplitudes of subsequent spin rotation interfere with each other. We demonstrate that this interference leads to a wide spread in the local values of tunnel magnetoresistance (TMR). Moreover, if on average the TMR is positive, the portion of the surface area where the TMR is negative is appreciable. We calculate analytically and numerically the distribution of local TMR as a function of the spin-valve thickness. Supported by the NSF through MRSEC DMR-112125 and by the US-Israel Binational Science Foundation

  11. Atomic spin chains as testing ground for quantum magnetism

    NASA Astrophysics Data System (ADS)

    Otte, Sander

    2015-03-01

    The field of quantum magnetism aims to capture the rich emergent physics that arises when multiple spins interact, in terms of elementary models such as the spin 1/2 Heisenberg chain. Experimental platforms to verify these models are rare and generally do not provide the possibility to detect spin correlations locally. In my lab we use low-temperature scanning tunneling microscopy to design and build artificial spin lattices with atomic precision. Inelastic electron tunneling spectroscopy enables us to identify the ground state and probe spin excitations as a function of system size, location inside the lattice and coupling parameter values. Two types of collective excitations that play a role in many dynamic magnetic processes are spin waves (magnons) and spinons. Our experiments enable us to study both types of excitations. First, we have been able to map the standing spin wave modes of a ferromagnetic bit of six atoms, and to determine their role in the collective reversal process of the bit (Spinelli et al., Nature Materials 2014). More recently, we have crafted antiferromagnetic spin 1/2 XXZ chains, which allow us to observe spinon excitations, as well as the stepwise transition to a fully aligned phase beyond the critical magnetic field (Toskovic et al., in preparation). These findings create a promising experimental environment for putting quantum magnetic models to the test. Research funded by NWO and FOM.

  12. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

    PubMed Central

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V.; Samant, Mahesh G.; Felser, Claudia; Parkin, Stuart S. P.

    2016-01-01

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn–Ge termination layers that are oppositely magnetized to the higher moment Mn–Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible. PMID:26776829

  13. Decoherence of an entangled state of a strongly correlated double quantum dot structure through tunneling processes

    NASA Astrophysics Data System (ADS)

    Büsser, C. A.; de Vega, I.; Heidrich-Meisner, F.

    2014-11-01

    We consider two quantum dots described by the Anderson-impurity model with one electron per dot. The goal of our work is to study the decay of a maximally entangled state between the two electrons localized in the dots. We prepare the system in a perfect singlet and then tunnel couple one of the dots to leads, which induces nonequilibrium dynamics. We identify two cases: If the leads are subject to a sufficiently large voltage and thus a finite current, then direct-tunneling processes cause decoherence and the entanglement as well as spin correlations decay exponentially fast. At zero voltage or small voltages and beyond the mixed-valence regime, virtual-tunneling processes dominate and lead to a slower loss of coherence. We analyze this problem by studying the real-time dynamics of the spin correlations and the concurrence using two techniques, namely, the time-dependent density matrix renormalization group method and a master-equation method. The results from these two approaches are in excellent agreement in the direct-tunneling regime for the case in which the dot is weakly tunnel coupled to the leads. We present a quantitative analysis of the decay rates of the spin correlations and the concurrence as a function of tunneling rate, interaction strength, and voltage.

  14. Eliminating Wind Tunnel Flow Breakdown

    NASA Technical Reports Server (NTRS)

    Hackett, J. E.

    1983-01-01

    Undesirable vortexes near floor in small wind tunnels suppressed by simple device that alters flow pattern there. Air is injected along floor and interacts with backflow from wind-tunnel model. Results in smoother, more correct air-flow and to more-reliable wind-tunnel data.

  15. Scanning tunneling microscope nanoetching method

    DOEpatents

    Li, Yun-Zhong; Reifenberger, Ronald G.; Andres, Ronald P.

    1990-01-01

    A method is described for forming uniform nanometer sized depressions on the surface of a conducting substrate. A tunneling tip is used to apply tunneling current density sufficient to vaporize a localized area of the substrate surface. The resulting depressions or craters in the substrate surface can be formed in information encoding patterns readable with a scanning tunneling microscope.

  16. Visualizing Topological Surface States using Scanning Tunneling Microscopy and Spectroscopy

    NASA Astrophysics Data System (ADS)

    Yazdani, Ali

    2010-03-01

    Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin-orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless metallic boundary states, akin to the chiral edge modes in quantum Hall systems, but with unconventional spin textures. Angle resolved photoemission experiments and theoretical efforts have provided strong evidence for bulk topological insulators and their spin-chiral surface states in several Bi-based compounds. We have performed scanning tunneling microscopy and spectroscopic studies of topological surface states on a range of different compounds. I will describe how these experiments illustrate the importance of the spin-texture of these novel states on their scattering and quantum confinement. Experiments demonstrate that these states are protected from backscattering between opposite spin states due to their chiral spin textures. [1]. More recently, our studies were extended to determine the interplay between the influence of spin symmetry on scattering and the possibility of energy level quantization due to geometric confinement for topological surface states. [2] Work was done in collaboration with P. Roushan, J. Seo, H. Beidenkopf, Y.-S. Hor, C. Parker, D. Hsieh, D. Qian, and A. Richardella, M. Z. Hasan, R. Cava. Supported by ARO, ONR, and MRSEC through PCCM. [4pt] [1] P. Roushan et al. Nature 460, 1106 (2009). [0pt] [2] J. Seo et al. submitted (2009).

  17. Separation of Spin and Charge Currents in a Superconductor

    NASA Astrophysics Data System (ADS)

    Hershfield, Selman

    1998-03-01

    Injecting electrons from a ferromagnet to a superconductor creates a nonequilibrium spin density. This is the spin analog to the well studied charge imbalance problem in superconductor-normal-metal tunnel junctions. We calculate the charge and spin imbalance in a unified manner.(Hui Lin Zhao and Selman Hershfield, Phys. Rev. B) 52, 3632 (1995). If one measures the charge and spin imbalance with a ferromagnetic voltage probe which has two possible spin configurations, 1 and 2, then the sum of the two voltages, V1 and V_2, measures the nonequilibrium charge density and the difference of the two voltages, V1 - V_2, measures the nonequilibrium spin density. One can use this technique to see the spatial separation of spin and charge currents in a superconductor: In a superconductor the charge current is carried by the condensate within a penetration length of the surface, and the spin current, which is carried by the the quasiparticles, can exist in the bulk. By placing a detection voltage probe within a few spin diffusion lengths of the injected electrons, but much further than the penetration length, one can see a nonequilibrium magnetization (and magnetic current) with no electrical current. We discuss the different spin relaxation rates and present explicit calculations of the spatial dependence of the spin and charge currents.

  18. Spin state of spin-crossover complexes: From single molecules to ultrathin films

    NASA Astrophysics Data System (ADS)

    Gruber, Manuel; Davesne, Vincent; Bowen, Martin; Boukari, Samy; Beaurepaire, Eric; Wulfhekel, Wulf; Miyamachi, Toshio

    2014-05-01

    The growth of spin-crossover Fe(1,10-phenanthroline)2(NCS)2 molecules on Cu(100) surfaces in the coverage range from 0.1 to 1.8 molecular layers was studied using a scanning tunneling microscope (STM) operated in ultrahigh vacuum at low temperature (≈4 K). STM imaging allowed us to extract the molecular adsorption geometry. While the first-layer molecules point their NCS groups toward the surface and their phenanthroline groups upwards, the adsorption geometry is reversed for the molecules in the second layer. For submonolayer coverages, a coexistence of molecules in the high- and low-spin states was found that is not correlated with the coverage. This coexistence is reduced for second-layer molecules, leading to a dominant spin state at low temperatures. Differential conductance spectra acquired at negative bias voltage on first- and second-layer molecules suggest that second-layer molecules are in the high-spin state and are partially electronically decoupled from the substrate. Furthermore, increasing the tip-to-sample voltage reduces the distance between the two lobes of the molecule. The current dependence of this effect suggests that a smooth spin crossover from a high- to a low-spin state occurs with increasing sample voltage. This analog spin-state switching is well described within a simple transition-state model involving modifications to the energy barriers between low- and high-spin states due to a tip-induced electric field through the Stark effect.

  19. Quiet wind tunnel

    NASA Technical Reports Server (NTRS)

    Howard, P. W.; Schutzenhofer, L. A.

    1978-01-01

    Simple and inexpensive technique suppresses background noise generated by pores in wind tunnel wall lining and makes aerodynamic data more accurate and reliable. Porous walls are covered with wire-mesh screen. Screen offers smoother surface to airflow and damps vortexes and resonance caused by wall perforations; yet it provides enough open area for perforations to cancel shock waves generated by model.

  20. Propeller Research Tunnel

    NASA Technical Reports Server (NTRS)

    1926-01-01

    This picture shows a general view of the Propeller Research Tunnel engine room under construction. Workmen were installing the two submarine diesel engines that would power the PRT. The room was constructed of concrete with corrugated metal siding and roofing with the intention of making the engine room as fireproof as possible.

  1. Prions tunnel between cells.

    PubMed

    Gerdes, Hans-Hermann

    2009-03-01

    Prions are abnormal isoforms of host proteins that are the infectious agents in certain mammalian neurodegenerative diseases. How prions travel from their peripheral entry sites to the brain where they cause disease is poorly understood. A new study finds that tunnelling nanotubes are important for the intercellular transfer of prions during neuroinvasion.

  2. Tunnelling with wormhole creation

    SciTech Connect

    Ansoldi, S.; Tanaka, T.

    2015-03-15

    The description of quantum tunnelling in the presence of gravity shows subtleties in some cases. We discuss wormhole production in the context of the spherically symmetric thin-shell approximation. By presenting a fully consistent treatment based on canonical quantization, we solve a controversy present in the literature.

  3. Carpal Tunnel Syndrome

    PubMed Central

    Mahoney, James Leo; Dagum, Alexander B.

    1992-01-01

    Carpal tunnel syndrome is a very common hand problem usually presenting with nighttime pain, numbness, and loss of dexterity. Controversy arises over the diagnosis, treatment, and evaluation of results. Nighttime splinting will improve the symptoms in some patients. If this fails, excellent results can be achieved with surgical decompression of the median nerve in the carpal canal. PMID:21221355

  4. Full Scale Tunnel model

    NASA Technical Reports Server (NTRS)

    1929-01-01

    Interior view of Full-Scale Tunnel (FST) model. (Small human figures have been added for scale.) On June 26, 1929, Elton W. Miller wrote to George W. Lewis proposing the construction of a model of the full-scale tunnel . 'The excellent energy ratio obtained in the new wind tunnel of the California Institute of Technology suggests that before proceeding with our full scale tunnel design, we ought to investigate the effect on energy ratio of such factors as: 1. small included angle for the exit cone; 2. carefully designed return passages of circular section as far as possible, without sudden changes in cross sections; 3. tightness of walls. It is believed that much useful information can be obtained by building a model of about 1/16 scale, that is, having a closed throat of 2 ft. by 4 ft. The outside dimensions would be about 12 ft. by 25 ft. in plan and the height 4 ft. Two propellers will be required about 28 in. in diameter, each to be driven by direct current motor at a maximum speed of 4500 R.P.M. Provision can be made for altering the length of certain portions, particularly the exit cone, and possibly for the application of boundary layer control in order to effect satisfactory air flow.

  5. Dry wind tunnel system

    NASA Technical Reports Server (NTRS)

    Chen, Ping-Chih (Inventor)

    2013-01-01

    This invention is a ground flutter testing system without a wind tunnel, called Dry Wind Tunnel (DWT) System. The DWT system consists of a Ground Vibration Test (GVT) hardware system, a multiple input multiple output (MIMO) force controller software, and a real-time unsteady aerodynamic force generation software, that is developed from an aerodynamic reduced order model (ROM). The ground flutter test using the DWT System operates on a real structural model, therefore no scaled-down structural model, which is required by the conventional wind tunnel flutter test, is involved. Furthermore, the impact of the structural nonlinearities on the aeroelastic stability can be included automatically. Moreover, the aeroservoelastic characteristics of the aircraft can be easily measured by simply including the flight control system in-the-loop. In addition, the unsteady aerodynamics generated computationally is interference-free from the wind tunnel walls. Finally, the DWT System can be conveniently and inexpensively carried out as a post GVT test with the same hardware, only with some possible rearrangement of the shakers and the inclusion of additional sensors.

  6. Tunneling spectroscopy of carbon nanostructures: A romance in many dimensions

    NASA Astrophysics Data System (ADS)

    Dirks, Travis Lee

    In this dissertation we present results from various methods of tunneling spectroscopy in carbon nanotubes, which shed light on electron -- electron interaction in carbon nanotubes and low dimensional systems in general. We also apply those methods to two dimensional graphene sheets. We first review the fabrication techniques used to make the devices studied here. Some of the techniques are standard in nanofabrication, and some were developed in-house to make the particular device geometries studied here possible. In particular, we developed recipes for the growth and contact of clean, ultra-long carbon nanotubes as well as for the fabrication of non-invasive top tunnel probes. We then present results on normal metal tunneling spectroscopy of carbon nanotube devices of varying length. We measure the exponent of the conductance power law in the density of states as a function of device length over two orders of magnitude and find unexpected evidence of finite size effects in long devices. Next, we present results from the first measurement of the non-equilibrium electron energy distribution function in carbon nanotubes measured via non-equilibrium superconducting tunneling spectroscopy and find little evidence of scattering at low temperatures, which is consistent with a clean, strongly interacting Luttinger liquid. In addition, we discuss two ways we are working to extend this powerful technique. We also present results of superconducting tunneling spectroscopy of a clean carbon nanotube quantum dot. We are able to characterize the energy spectrum of the quantum dot and distinguish between spin singlet and spin triplet shell filling. We observe elastic and inelastic co-tunneling features which are not visible when the probe is made normal by a magnetic field. These co-tunneling rates have important technological implications for carbon nanotubes as single electron transistors. We also observe an energetically forbidden conductance inside the superconducting gap

  7. Fermions tunneling from rotating stationary Kerr black hole with electric charge and magnetic charge

    NASA Astrophysics Data System (ADS)

    Yang, Juan; Yang, Shu-Zheng

    2010-06-01

    In this paper, the method of semi-classical fermion tunneling is extended to explore the fermion tunneling behavior of a Kerr-Newman-Kasuya black hole. Thus, the Hamilton-Jacobi equation in Kerr-Newman-Kasuya space-time is derived by the method presented in Refs. Lin and Yang (2009) [24-26], the Hawking temperature at the horizon and the tunneling probability of spin- 1/2 fermions are finally obtained following the semi-classical quantum equation. The results indicate the common features of this black hole.

  8. Massive vector particles tunneling from noncommutative charged black holes and their GUP-corrected thermodynamics

    NASA Astrophysics Data System (ADS)

    Övgün, Ali; Jusufi, Kimet

    2016-05-01

    In this paper, we investigate the tunneling process of charged massive bosons W^{±} (spin-1 particles) from noncommutative charged black holes such as charged RN black holes and charged BTZ black holes. By applying the WKB approximation and by using the Hamilton-Jacobi equation we derive the tunneling rate and the corresponding Hawking temperature for those black holes configuration. Furthermore, we show the quantum gravity effects using the GUP on the Hawking temperature for the noncommutative RN black holes. The tunneling rate shows that the radiation deviates from pure thermality and is consistent with an underlying unitary theory.

  9. Quantum ratchet in two-dimensional semiconductors with Rashba spin-orbit interaction

    PubMed Central

    Ang, Yee Sin; Ma, Zhongshui; Zhang, Chao

    2015-01-01

    Ratchet is a device that produces direct current of particles when driven by an unbiased force. We demonstrate a simple scattering quantum ratchet based on an asymmetrical quantum tunneling effect in two-dimensional electron gas with Rashba spin-orbit interaction (R2DEG). We consider the tunneling of electrons across a square potential barrier sandwiched by interface scattering potentials of unequal strengths on its either sides. It is found that while the intra-spin tunneling probabilities remain unchanged, the inter-spin-subband tunneling probabilities of electrons crossing the barrier in one direction is unequal to that of the opposite direction. Hence, when the system is driven by an unbiased periodic force, a directional flow of electron current is generated. The scattering quantum ratchet in R2DEG is conceptually simple and is capable of converting a.c. driving force into a rectified current without the need of additional symmetry breaking mechanism or external magnetic field. PMID:25598490

  10. The Channel Tunnel

    NASA Technical Reports Server (NTRS)

    2006-01-01

    The Channel Tunnel is a 50.5 km-long rail tunnel beneath the English Channel at the Straits of Dover. It connects Dover, Kent in England with Calais, northern France. The undersea section of the tunnel is unsurpassed in length in the world. A proposal for a Channel tunnel was first put forward by a French engineer in 1802. In 1881, a first attempt was made at boring a tunnel from the English side; the work was halted after 800 m. Again in 1922, English workers started boring a tunnel, and advanced 120 m before it too was halted for political reasons. The most recent attempt was begun in 1987, and the tunnel was officially opened in 1994. At completion it was estimated that the project cost around $18 billion. It has been operating at a significant loss since its opening, despite trips by over 7 million passengers per year on the Eurostar train, and over 3 million vehicles per year.

    With its 14 spectral bands from the visible to the thermal infrared wavelength region, and its high spatial resolution of 15 to 90 meters (about 50 to 300 feet), ASTER images Earth to map and monitor the changing surface of our planet.

    ASTER is one of five Earth-observing instruments launched December 18, 1999, on NASA's Terra satellite. The instrument was built by Japan's Ministry of Economy, Trade and Industry. A joint U.S./Japan science team is responsible for validation and calibration of the instrument and the data products.

    The broad spectral coverage and high spectral resolution of ASTER provides scientists in numerous disciplines with critical information for surface mapping, and monitoring of dynamic conditions and temporal change. Example applications are: monitoring glacial advances and retreats; monitoring potentially active volcanoes; identifying crop stress; determining cloud morphology and physical properties; wetlands evaluation; thermal pollution monitoring; coral reef degradation; surface temperature mapping of soils and geology; and measuring

  11. Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study

    NASA Astrophysics Data System (ADS)

    Sankaran, K.; Swerts, J.; Couet, S.; Stokbro, K.; Pourtois, G.

    2016-09-01

    To investigate the impact of both the CoFe ferromagnetic layer thickness and the capping paramagnetic layer on the tunnel magnetoresistance (TMR), we performed first-principles simulations on epitaxial magnetic tunnel junctions contacted with either CoFe or Ta paramagnetic capping layers. We observed a strong oscillation of the TMR amplitude with respect to the thickness of the ferromagnetic layer. The TMR is found to be amplified whenever the MgO spin tunnel barrier is thickened. Quantization of the electronic structure of the ferromagnetic layers is found to be at the origin of this oscillatory behavior. Metals such as Ta contacting the magnetic layer are found to enhance the amplitude of the oscillations due to the occurrence of an interface dipole. The latter drives the band alignment and tunes the nature of the spin channels that are active during the tunneling process. Subsequently, the regular transmission spin channels are modulated in the magnetic tunnel junction stack and other complex ones are being activated.

  12. Non-magnetic organic/inorganic spin injector at room temperature

    SciTech Connect

    Mathew, Shinto P.; Mondal, Prakash Chandra; Naaman, Ron; Moshe, Hagay; Mastai, Yitzhak

    2014-12-15

    Spin injection into solid-state devices is commonly performed by use of ferromagnetic metal electrodes. Here, we present a spin injector design without permanent magnet; rather, the spin selectivity is determined by a chiral tunneling barrier. The chiral tunneling barrier is composed of an ultrathin Al{sub 2}O{sub 3} layer that is deposited on top of a chiral self-assembled monolayer (SAM), which consists of cysteine or oligopeptide molecules. The experimentally observed magnetoresistance can be up to 20% at room temperature, and it displays an uncommon asymmetric curve as a function of the applied magnetic field. These findings show that the spin injector transmits only one spin orientation, independent of external magnetic field. The sign of the magnetoresistance depends on the handedness of the molecules in the SAM, which act as a spin filter, and the magnitude of the magnetoresistance depends only weakly on temperature.

  13. Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Morgan, Caitlin; Misiorny, Maciej; Metten, Dominik; Heedt, Sebastian; Schäpers, Thomas; Schneider, Claus M.; Meyer, Carola

    2016-05-01

    We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of τs=1.1 ns , a value comparable with those found in silicon- or graphene-based spin-valve devices.

  14. Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions.

    PubMed

    Song, Yang; Dery, Hanan

    2014-07-25

    We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories. PMID:25105652

  15. spin pumping occurred under nonlinear spin precession

    NASA Astrophysics Data System (ADS)

    Zhou, Hengan; Fan, Xiaolong; Ma, Li; Zhou, Shiming; Xue, Desheng

    Spin pumping occurs when a pure-spin current is injected into a normal metal thin layer by an adjacent ferromagnetic metal layer undergoing ferromagnetic resonance, which can be understood as the inverse effect of spin torque, and gives access to the physics of magnetization dynamics and damping. An interesting question is that whether spin pumping occurring under nonlinear spin dynamics would differ from linear case. It is known that nonlinear spin dynamics differ distinctly from linear response, a variety of amplitude dependent nonlinear effect would present. It has been found that for spin precession angle above a few degrees, nonlinear damping term would present and dominated the dynamic energy/spin-moment dissipation. Since spin pumping are closely related to the damping process, it is interesting to ask whether the nonlinear damping term could be involved in spin pumping process. We studied the spin pumping effect occurring under nonlinear spin precession. A device which is a Pt/YIG microstrip coupled with coplanar waveguide was used. High power excitation resulted in spin precession entering in a nonlinear regime. Foldover resonance lineshape and nonlinear damping have been observed. Based on those nonlinear effects, we determined the values of the precession cone angles, and the maximum cone angle can reach a values as high as 21.5 degrees. We found that even in nonlinear regime, spin pumping is still linear, which means the nonlinear damping and foldover would not affect spin pumping process.

  16. Probing Spin Accumulation induced Magnetocapacitance in a Single Electron Transistor

    PubMed Central

    Lee, Teik-Hui; Chen, Chii-Dong

    2015-01-01

    The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect, as predicted by Curie on the basis of symmetry considerations. This effect enables the manipulation of magnetization using electrical field or, conversely, the manipulation of electrical polarization by magnetic field. The latter is known as the magnetocapacitance effect. Here, we show that non-equilibrium spin accumulation can induce tunnel magnetocapacitance through the formation of a tiny charge dipole. This dipole can effectively give rise to an additional serial capacitance, which represents an extra charging energy that the tunneling electrons would encounter. In the sequential tunneling regime, this extra energy can be understood as the energy required for a single spin to flip. A ferromagnetic single-electron-transistor with tunable magnetic configuration is utilized to demonstrate the proposed mechanism. It is found that the extra threshold energy is experienced only by electrons entering the islands, bringing about asymmetry in the measured Coulomb diamond. This asymmetry is an unambiguous evidence of spin accumulation induced tunnel magnetocapacitance, and the measured magnetocapacitance value is as high as 40%. PMID:26348794

  17. Optimization of spin-torque switching using AC and DC pulses

    SciTech Connect

    Dunn, Tom; Kamenev, Alex

    2014-06-21

    We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

  18. Introduction to cryogenic wind tunnels

    NASA Technical Reports Server (NTRS)

    Goodyer, M. J.

    1985-01-01

    The background to the evolution of the cryogenic wind tunnel is outlined, with particular reference to the late 60's/early 70's when efforts were begun to re-equip with larger wind tunnels. The problems of providing full scale Reynolds numbers in transonic testing were proving particularly intractible, when the notion of satisfying the needs with the cryogenic tunnel was proposed, and then adopted. The principles and advantages of the cryogenic tunnel are outlined, along with guidance on the coolant needs when this is liquid nitrogen, and with a note on energy recovery. Operational features of the tunnels are introduced with reference to a small low speed tunnel. Finally the outstanding contributions are highlighted of the 0.3-Meter Transonic Cryogenic Tunnel (TCT) at NASA Langley Research Center, and its personnel, to the furtherance of knowledge and confidence in the concept.

  19. Some Static Oscillatory and Free Body Tests of Blunt Bodies at Low Subsonic Speeds

    NASA Technical Reports Server (NTRS)

    Lichtenstein, Jacob H.; Fisher, Lewis R.; Scher, Stanley H.; Lawrence, George F.

    1959-01-01

    Some blunt-body shapes considered suitable for entry into the earth's atmosphere were tested by both static and oscillatory methods in the Langley stability tunnel. In addition, free-fall tests of some similar models were made in the Langley 20-foot free-spinning tunnel. The results of the tests show that increasing the flare of the body shape increased the dynamic stability and that for flat-faced shapes increasing the corner radius increased the stability. The test data from the Langley stability tunnel were used to compute the damping factor for the models tested in the langley 20-foot free-spinning tunnel. For these cases in which the damping factor was low, -1/2 or less, the stability was critical and sensitive to disturbance. When the damping factor was about -2, damping was generally obtained.

  20. A spin-filter made of quantum anomalous Hall insulator nanowires

    SciTech Connect

    Wu, Jiansheng

    2014-07-28

    Topological end states (TES) in quantum anomalous Hall insulator nanowires can induce tunneling within the gap. Such TES are spin polarized, thus the induced current is spin polarized as well, which can be used to construct a spin-filter applied in spintronics. An interferometry device is designed to control the polarized current as well. The advantage and finite size effect on this system are discussed.