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Sample records for 2d boron nitride

  1. 2D Hexagonal Boron Nitride (2D-hBN) Explored for the Electrochemical Sensing of Dopamine.

    PubMed

    Khan, Aamar F; Brownson, Dale A C; Randviir, Edward P; Smith, Graham C; Banks, Craig E

    2016-10-04

    Crystalline 2D hexagonal boron nitride (2D-hBN) nanosheets are explored as a potential electrocatalyst toward the electroanalytical sensing of dopamine (DA). The 2D-hBN nanosheets are electrically wired via a drop-casting modification process onto a range of commercially available carbon supporting electrodes, including glassy carbon (GC), boron-doped diamond (BDD), and screen-printed graphitic electrodes (SPEs). 2D-hBN has not previously been explored toward the electrochemical detection/electrochemical sensing of DA. We critically evaluate the potential electrocatalytic performance of 2D-hBN modified electrodes, the effect of supporting carbon electrode platforms, and the effect of "mass coverage" (which is commonly neglected in the 2D material literature) toward the detection of DA. The response of 2D-hBN modified electrodes is found to be largely dependent upon the interaction between 2D-hBN and the underlying supporting electrode material. For example, in the case of SPEs, modification with 2D-hBN (324 ng) improves the electrochemical response, decreasing the electrochemical oxidation potential of DA by ∼90 mV compared to an unmodified SPE. Conversely, modification of a GC electrode with 2D-hBN (324 ng) resulted in an increased oxidation potential of DA by ∼80 mV when compared to the unmodified electrode. We explore the underlying mechanisms of the aforementioned examples and infer that electrode surface interactions and roughness factors are critical considerations. 2D-hBN is utilized toward the sensing of DA in the presence of the common interferents ascorbic acid (AA) and uric acid (UA). 2D-hBN is found to be an effective electrocatalyst in the simultaneous detection of DA and UA at both pH 5.0 and 7.4. The peak separations/resolution between DA and UA increases by ∼70 and 50 mV (at pH 5.0 and 7.4, respectively, when utilizing 108 ng of 2D-hBN) compared to unmodified SPEs, with a particularly favorable response evident in pH 5.0, giving rise to a

  2. Advances in 2D boron nitride nanostructures: nanosheets, nanoribbons, nanomeshes, and hybrids with graphene

    NASA Astrophysics Data System (ADS)

    Lin, Yi; Connell, John W.

    2012-10-01

    The recent surge in graphene research has stimulated interest in the investigation of various 2-dimensional (2D) nanomaterials. Among these materials, the 2D boron nitride (BN) nanostructures are in a unique position. This is because they are the isoelectric analogs to graphene structures and share very similar structural characteristics and many physical properties except for the large band gap. The main forms of the 2D BN nanostructures include nanosheets (BNNSs), nanoribbons (BNNRs), and nanomeshes (BNNMs). BNNRs are essentially BNNSs with narrow widths in which the edge effects become significant; BNNMs are also variations of BNNSs, which are supported on certain metal substrates where strong interactions and the lattice mismatch between the substrate and the nanosheet result in periodic shallow regions on the nanosheet surface. Recently, the hybrids of 2D BN nanostructures with graphene, in the form of either in-plane hybrids or inter-plane heterolayers, have also drawn much attention. In particular, the BNNS-graphene heterolayer architectures are finding important electronic applications as BNNSs may serve as excellent dielectric substrates or separation layers for graphene electronic devices. In this article, we first discuss the structural basics, spectroscopic signatures, and physical properties of the 2D BN nanostructures. Then, various top-down and bottom-up preparation methodologies are reviewed in detail. Several sections are dedicated to the preparation of BNNRs, BNNMs, and BNNS-graphene hybrids, respectively. Following some more discussions on the applications of these unique materials, the article is concluded with a summary and perspectives of this exciting new field.

  3. Advances in 2D boron nitride nanostructures: nanosheets, nanoribbons, nanomeshes, and hybrids with graphene.

    PubMed

    Lin, Yi; Connell, John W

    2012-11-21

    The recent surge in graphene research has stimulated interest in the investigation of various 2-dimensional (2D) nanomaterials. Among these materials, the 2D boron nitride (BN) nanostructures are in a unique position. This is because they are the isoelectric analogs to graphene structures and share very similar structural characteristics and many physical properties except for the large band gap. The main forms of the 2D BN nanostructures include nanosheets (BNNSs), nanoribbons (BNNRs), and nanomeshes (BNNMs). BNNRs are essentially BNNSs with narrow widths in which the edge effects become significant; BNNMs are also variations of BNNSs, which are supported on certain metal substrates where strong interactions and the lattice mismatch between the substrate and the nanosheet result in periodic shallow regions on the nanosheet surface. Recently, the hybrids of 2D BN nanostructures with graphene, in the form of either in-plane hybrids or inter-plane heterolayers, have also drawn much attention. In particular, the BNNS-graphene heterolayer architectures are finding important electronic applications as BNNSs may serve as excellent dielectric substrates or separation layers for graphene electronic devices. In this article, we first discuss the structural basics, spectroscopic signatures, and physical properties of the 2D BN nanostructures. Then, various top-down and bottom-up preparation methodologies are reviewed in detail. Several sections are dedicated to the preparation of BNNRs, BNNMs, and BNNS-graphene hybrids, respectively. Following some more discussions on the applications of these unique materials, the article is concluded with a summary and perspectives of this exciting new field.

  4. Enhanced durability of polymer electrolyte membrane fuel cells by functionalized 2D boron nitride nanoflakes.

    PubMed

    Oh, Keun-Hwan; Lee, Dongju; Choo, Min-Ju; Park, Kwang Hyun; Jeon, Seokwoo; Hong, Soon Hyung; Park, Jung-Ki; Choi, Jang Wook

    2014-05-28

    We report boron nitride nanoflakes (BNNFs), for the first time, as a nanofiller for polymer electrolyte membranes in fuel cells. Utilizing the intrinsic mechanical strength of two-dimensional (2D) BN, addition of BNNFs even at a marginal content (0.3 wt %) significantly improves mechanical stability of the most representative hydrocarbon-type (HC-type) polymer electrolyte membrane, namely sulfonated poly(ether ether ketone) (sPEEK), during substantial water uptake through repeated wet/dry cycles. For facile processing with BNNFs that frequently suffer from poor dispersion in most organic solvents, we non-covalently functionalized BNNFs with 1-pyrenesulfonic acid (PSA). Besides good dispersion, PSA supports efficient proton transport through its sulfonic functional groups. Compared to bare sPEEK, the composite membrane containing BNNF nanofiller exhibited far improved long-term durability originating from enhanced dimensional stability and diminished chronic edge failure. This study suggests that introduction of properly functionalized 2D BNNFs is an effective strategy in making various HC-type membranes sustainable without sacrificing their original adventurous properties in polymer electrolyte membrane fuel cells.

  5. Chemisorption of Hydroxide on 2D Materials From DFT Calculations: Graphene Versus Hexagonal Boron Nitride

    PubMed Central

    Grosjean, Benoit; Pean, Clarisse; Siria, Alessandro; Bocquet, Lyderic; Vuilleumier, Rodolphe; Bocquet, Marie-Laure

    2017-01-01

    Recent nanofluidic measurements revealed strongly different surface charge measurements for boron-nitride and graphitic nanotubes when in contact with saline and alkaline water. 1,2 These observations contrast with the similar reactivity of a graphene layer and its boron nitride counterpart, using Density Functional Theory (DFT) framework, for intact and dissociative adsorption of gaseous water molecules. Here, we investigate, by DFT in implicit water, single and multiple adsorption of anionic hydroxide on single layers. A differential adsorption strength is found in vacuum for the first ionic adsorption on the two materials – chemisorbed on BN while physisorbed on graphene. The effect of implicit solvation reduces all adsorption values resulting in a favorable (non-favorable) adsorption on BN (graphene). We also calculate a pKa ≃ 6 for BN in water, in good agreement with experiments. Comparatively, the unfavorable results for graphene in water echoes the weaker surface charge measurements, but points to an alternative scenario. PMID:27809540

  6. Crystalline boron nitride aerogels

    DOEpatents

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  7. Boron nitride composites

    DOEpatents

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  8. Fringe structures and tunable bandgap width of 2D boron nitride nanosheets.

    PubMed

    Feng, Peter; Sajjad, Muhammad; Li, Eric Yiming; Zhang, Hongxin; Chu, Jin; Aldalbahi, Ali; Morell, Gerardo

    2014-01-01

    We report studies of the surface fringe structures and tunable bandgap width of atomic-thin boron nitride nanosheets (BNNSs). BNNSs are synthesized by using digitally controlled pulse deposition techniques. The nanoscale morphologies of BNNSs are characterized by using scanning electron microscope (SEM), and transmission electron microscopy (TEM). In general, the BNNSs appear microscopically flat in the case of low temperature synthesis, whereas at high temperature conditions, it yields various curved structures. Experimental data reveal the evolutions of fringe structures. Functionalization of the BNNSs is completed with hydrogen plasma beam source in order to efficiently control bandgap width. The characterizations are based on Raman scattering spectroscopy, X-ray diffraction (XRD), and FTIR transmittance spectra. Red shifts of spectral lines are clearly visible after the functionalization, indicating the bandgap width of the BNNSs has been changed. However, simple treatments with hydrogen gas do not affect the bandgap width of the BNNSs.

  9. Chemisorption of Hydroxide on 2D Materials from DFT Calculations: Graphene versus Hexagonal Boron Nitride.

    PubMed

    Grosjean, Benoit; Pean, Clarisse; Siria, Alessandro; Bocquet, Lydéric; Vuilleumier, Rodolphe; Bocquet, Marie-Laure

    2016-11-17

    Recent nanofluidic experiments revealed strongly different surface charge measurements for boron-nitride (BN) and graphitic nanotubes when in contact with saline and alkaline water (Nature 2013, 494, 455-458; Phys. Rev. Lett. 2016, 116, 154501). These observations contrast with the similar reactivity of a graphene layer and its BN counterpart, using density functional theory (DFT) framework, for intact and dissociative adsorption of gaseous water molecules. Here we investigate, by DFT in implicit water, single and multiple adsorption of anionic hydroxide on single layers. A differential adsorption strength is found in vacuum for the first ionic adsorption on the two materials-chemisorbed on BN while physisorbed on graphene. The effect of implicit solvation reduces all adsorption values, resulting in a favorable (nonfavorable) adsorption on BN (graphene). We also calculate a pKa ≃ 6 for BN in water, in good agreement with experiments. Comparatively, the unfavorable results for graphene in water echo the weaker surface charge measurements but point to an alternative scenario.

  10. Methods of forming boron nitride

    DOEpatents

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  11. Boron Nitride Nanotubes

    NASA Technical Reports Server (NTRS)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  12. Boron nitride nanotubes

    DOEpatents

    Smith, Michael W [Newport News, VA; Jordan, Kevin [Newport News, VA; Park, Cheol [Yorktown, VA

    2012-06-06

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  13. Nano boron nitride flatland.

    PubMed

    Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

    2014-02-07

    Recent years have witnessed many breakthroughs in research on two-dimensional (2D) nanomaterials, among which is hexagonal boron nitride (h-BN), a layered material with a regular network of BN hexagons. This review provides an insight into the marvellous nano BN flatland, beginning with a concise introduction to BN and its low-dimensional nanostructures, followed by an overview of the past and current state of research on 2D BN nanostructures. A comprehensive review of the structural characteristics and synthetic routes of BN monolayers, multilayers, nanomeshes, nanowaves, nanoflakes, nanosheets and nanoribbons is presented. In addition, electronic, optical, thermal, mechanical, magnetic, piezoelectric, catalytic, ecological, biological and wetting properties, applications and research perspectives for these novel 2D nanomaterials are discussed.

  14. Boron nitride composites

    DOEpatents

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  15. Boron nitride converted carbon fiber

    SciTech Connect

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  16. High thermally conductive and electrically insulating 2D boron nitride nanosheet for efficient heat dissipation of high-power transistors

    NASA Astrophysics Data System (ADS)

    Lin, Ziyuan; Liu, Chunru; Chai, Yang

    2016-12-01

    High-power transistors suffer greatly from inefficient heat dissipation of the hotspots, which elevate the local temperature and significantly degrade the performance and reliability of the high-power devices. Although various thermal management methods at package-level have been demonstrated, the heat dissipation from non-uniform hotspots at micro/nanoscale still persist in the high power transistors. Here, we develop a method for local thermal management using thermally conductive and electrical insulating few-layer hexagonal boron nitride (h-BN) as heat spreaders and thick counterpart as heat sinks. The electrically insulating characteristic of h-BN nanosheet allows it to be intimately contacted with the hotspot region that is located at the gate electrode edge near the drain side of a high-electron-mobility transistor (HEMT). The high thermal conductivity of h-BN nanosheet, which is quantitatively measured by Raman thermography, reduces the temperature of the hotspot by introducing an additional heat transporting pathway. Our DC and radio-frequency characterizations of the HEMT show the improvement of saturation current, cut-off frequency and maximum oscillation frequency. The finite element simulations show a temperature decrease of ∼32 °C at the hotspot with the use of h-BN nanosheet. This method can be further extended for the micro/nanoscale thermal management of other high-power devices.

  17. Boron nitride nanotubes.

    PubMed

    Chopra, N G; Luyken, R J; Cherrey, K; Crespi, V H; Cohen, M L; Louie, S G; Zettl, A

    1995-08-18

    The successful synthesis of pure boron nitride (BN) nanotubes is reported here. Multi-walled tubes with inner diameters on the order of 1 to 3 nanometers and with lengths up to 200 nanometers were produced in a carbon-free plasma discharge between a BN-packed tungsten rod and a cooled copper electrode. Electron energy-loss spectroscopy on individual tubes yielded B:N ratios of approximately 1, which is consistent with theoretical predictions of stable BN tube structures.

  18. Functionalized boron nitride nanotubes

    DOEpatents

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  19. Pure & crystallized 2D Boron Nitride sheets synthesized via a novel process coupling both PDCs and SPS methods

    PubMed Central

    Yuan, Sheng; Linas, Sébastien; Journet, Catherine; Steyer, Philippe; Garnier, Vincent; Bonnefont, Guillaume; Brioude, Arnaud; Toury, Bérangère

    2016-01-01

    Within the context of emergent researches linked to graphene, it is well known that h-BN nanosheets (BNNSs), also referred as 2D BN, are considered as the best candidate for replacing SiO2 as dielectric support or capping layers for graphene. As a consequence, the development of a novel alternative source for highly crystallized h-BN crystals, suitable for a further exfoliation, is a prime scientific issue. This paper proposes a promising approach to synthesize pure and well-crystallized h-BN flakes, which can be easily exfoliated into BNNSs. This new accessible production process represents a relevant alternative source of supply in response to the increasing need of high quality BNNSs. The synthesis strategy to prepare pure h-BN is based on a unique combination of the Polymer Derived Ceramics (PDCs) route with the Spark Plasma Sintering (SPS) process. Through a multi-scale chemical and structural investigation, it is clearly shown that obtained flakes are large (up to 30 μm), defect-free and well crystallized, which are key-characteristics for a subsequent exfoliation into relevant BNNSs. PMID:26843122

  20. Pure & crystallized 2D Boron Nitride sheets synthesized via a novel process coupling both PDCs and SPS methods

    NASA Astrophysics Data System (ADS)

    Yuan, Sheng; Linas, Sébastien; Journet, Catherine; Steyer, Philippe; Garnier, Vincent; Bonnefont, Guillaume; Brioude, Arnaud; Toury, Bérangère

    2016-02-01

    Within the context of emergent researches linked to graphene, it is well known that h-BN nanosheets (BNNSs), also referred as 2D BN, are considered as the best candidate for replacing SiO2 as dielectric support or capping layers for graphene. As a consequence, the development of a novel alternative source for highly crystallized h-BN crystals, suitable for a further exfoliation, is a prime scientific issue. This paper proposes a promising approach to synthesize pure and well-crystallized h-BN flakes, which can be easily exfoliated into BNNSs. This new accessible production process represents a relevant alternative source of supply in response to the increasing need of high quality BNNSs. The synthesis strategy to prepare pure h-BN is based on a unique combination of the Polymer Derived Ceramics (PDCs) route with the Spark Plasma Sintering (SPS) process. Through a multi-scale chemical and structural investigation, it is clearly shown that obtained flakes are large (up to 30 μm), defect-free and well crystallized, which are key-characteristics for a subsequent exfoliation into relevant BNNSs.

  1. Graphene on hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Yankowitz, Matthew; Xue, Jiamin; LeRoy, B. J.

    2014-07-01

    The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.

  2. Structure of boron nitride nanotubes

    SciTech Connect

    Buranova, Yu. S. Kulnitskiy, B. A.; Perezhogin, I. A.; Blank, V. D.

    2015-01-15

    The crystallographic structure of boron nitride nanotubes has been investigated. Various defects that may arise during nanotube synthesis are revealed by electron microscopy. Nanotubes with different numbers of walls and different diameters are modeled by molecular dynamics methods. Structural features of single-wall nanotubes are demonstrated. The causes of certain defects in multiwall nanotubes are indicated.

  3. Structure of boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Buranova, Yu. S.; Kulnitskiy, B. A.; Perezhogin, I. A.; Blank, V. D.

    2015-01-01

    The crystallographic structure of boron nitride nanotubes has been investigated. Various defects that may arise during nanotube synthesis are revealed by electron microscopy. Nanotubes with different numbers of walls and different diameters are modeled by molecular dynamics methods. Structural features of single-wall nanotubes are demonstrated. The causes of certain defects in multiwall nanotubes are indicated.

  4. Synthesis of aluminium nitride/boron nitride composite materials

    SciTech Connect

    Xiao, T.D. . Polymer Science Program and Dept. of Chemistry); Gonsalves, K.E. . Polymer Science Program and Dept. of Chemistry Univ. of Connecticut, Storrs, CT . Dept. of Chemistry); Strutt, P.R. . Dept. of Metallurgy)

    1993-04-01

    Aluminum nitride/boron nitride composite was synthesized by using boric acid, urea, and aluminum chloride (or aluminum lactate) as the starting compounds. The starting materials were dissolved in water and mixed homogeneously. Ammonolysis of this aqueous solution resulted in the formation of a precomposite gel, which converted into the aluminum nitride/boron nitride composite on further heat treatment. Characterization of both the precomposite and the composite powders included powder X-ray diffraction, Fourier transform infrared spectroscopy, and scanning electron microscopy. Analysis of the composite revealed that the aluminum nitride phase had a hexagonal structure, and the boron nitride phase a turbostratic structure.

  5. Process for making boron nitride using sodium cyanide and boron

    DOEpatents

    Bamberger, Carlos E.

    1990-02-06

    This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

  6. Process for making boron nitride using sodium cyanide and boron

    DOEpatents

    Bamberger, Carlos E.

    1990-01-01

    This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

  7. Longitudinal Splitting of Boron Nitride Nanotubes for the Facile Synthesis of High Quality Boron Nitride Nanoribbons

    DTIC Science & Technology

    2011-05-24

    Boron Nitride Nanotubes for the Facile Synthesis of High Quality Boron Nitride Nanoribbons Kris J. Erickson,†,‡,§ Ashley...We report the synthesis of BNNRs through the potassium-intercalation-induced longitudinal splitting of boron nitride nanotubes (BNNTs). This facile...COVERED 00-00-2011 to 00-00-2011 4. TITLE AND SUBTITLE Longitudinal Splitting of Boron Nitride Nanotubes for the Facile Synthesis of High

  8. Synthesis, Properties, and Applications Of Boron Nitride

    NASA Technical Reports Server (NTRS)

    Pouch, John J.; Alterovitz, Samuel A.

    1993-01-01

    Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

  9. Rebar graphene from functionalized boron nitride nanotubes.

    PubMed

    Li, Yilun; Peng, Zhiwei; Larios, Eduardo; Wang, Gunuk; Lin, Jian; Yan, Zheng; Ruiz-Zepeda, Francisco; José-Yacamán, Miguel; Tour, James M

    2015-01-27

    The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties.

  10. Rebar Graphene from Functionalized Boron Nitride Nanotubes

    PubMed Central

    2015-01-01

    The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties. PMID:25486451

  11. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    NASA Astrophysics Data System (ADS)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  12. Boron Nitride Nanoribbons: Synthesis and Future Directions

    NASA Astrophysics Data System (ADS)

    Gibb, Ashley; Erikson, Kris; Sinitskii, Alex; Rousseas, Michael; Alem, Nasim; Tour, James; Zettl, Alex

    2012-02-01

    Boron Nitride Nanoribbons (BNNR) have been theorized to have many interesting electrical and magnetic properties and edge states, but these characteristics have not been experimentally verified due to challenges in synthesis and purification. We have produced BNNRs by longitudinally splitting boron nitride nanotubes (BNNT) using potassium vapor as an intercalant. Due to the strong interactions between boron nitride sheets, separation of nanoribbons from their parent tubes is challenging. We have used various solvent systems to assist with separation of the ribbons with the goal of probing their properties.

  13. Boron nitride fibers from polymer precursors

    SciTech Connect

    Wade, B.E.

    1992-12-31

    Conversion of polymer precursors to high performance boron nitride fibers as explored through a fundamental study of the mutually dependent chemical, morphological, and processing requirements in precursor polymer synthesis, formation of continuous precursor fibers, and finally thermochemical conversion to oriented boron nitride fibers. Polyborate and polyborazylene precursors were investigated. method of incorporating polyborazine in polyborate were also explored in order to stabilize the shape of polyborate fibers and to help initiate an orientable boron nitride structure. Polyborazylene, a polyborazine of fused borazine polycyclic structures was chosen for study as a precursor for boron nitride fibers because of the closeness of its structure to that of the desired turbostratic boron nitride. Both poly(ethylene oxide) and poly(methyl methacrylate) were found to be compatible with the monomer, borazine, and polyborazylenesolutions with monoglyme. They could be used to build the viscosity of solutions. However, fibers that were hand-drawn from these solutions were very sticky and quickly hydrolyzed in room atmosphere. Conversion of polyborazylene to oriented boron nitride fibers was not realized. Processable polyborates were produced by polycondensation of trimethoxyboroxine and boric acid and also by disproportionation or trimethyoxyboraxine. It was shown that the rheological characteristics of the polyborate formed could be controlled by an appropriate combination of the conversion of the monomer to polymer and the addition of a linear organic polymer as a rheological aid. Poly(methyl methacrylate) was found to be a suitable rheological aid, with a decomposition temperature that is high enough to facilitate its incorporation in the polymerizing system and low energy to be fugitive during thermochemical conversion of the polyborate to boron nitride.

  14. Hexagonal boron-nitride nanomesh magnets

    NASA Astrophysics Data System (ADS)

    Ohata, C.; Tagami, R.; Nakanishi, Y.; Iwaki, R.; Nomura, K.; Haruyama, J.

    2016-09-01

    The formation of magnetic and spintronic devices using two-dimensional (2D) atom-thin layers has attracted attention. Ferromagnetisms (FMs) arising from zigzag-type atomic structure of edges of 2D atom-thin materials have been experimentally observed in graphene nanoribbons, hydrogen (H)-terminated graphene nanomeshes (NMs), and few-layer oxygen (O)-terminated black phosphorus NMs. Herein, we report room-temperature edge FM in few-layer hexagonal boron-nitride (hBN) NMs. O-terminated hBNNMs annealed at 500 °C show the largest FM, while it completely disappears in H-terminated hBNNMs. When hBNNMs are annealed at other temperatures, amplitude of the FM significantly decreases. These are highly in contrast to the case of graphene NMs but similar to the cases of black phosphorus NM and suggest that the hybridization of the O atoms with B(N) dangling bonds of zigzag pore edges, formed at the 500 °C annealing, strongly contribute to this edge FM. Room-temperature FM realizable only by exposing hBNNMs into air opens the way for high-efficiency 2D flexible magnetic and spintronic devices without the use of rare magnetic elements.

  15. Method of manufacture of atomically thin boron nitride

    SciTech Connect

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  16. Boron nitride nanotubes and nanosheets.

    PubMed

    Golberg, Dmitri; Bando, Yoshio; Huang, Yang; Terao, Takeshi; Mitome, Masanori; Tang, Chengchun; Zhi, Chunyi

    2010-06-22

    Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar networks of BN hexagons are regularly stacked. As the structural analogue of a carbon nanotube (CNT), a BN nanotube (BNNT) was first predicted in 1994; since then, it has become one of the most intriguing non-carbon nanotubes. Compared with metallic or semiconducting CNTs, a BNNT is an electrical insulator with a band gap of ca. 5 eV, basically independent of tube geometry. In addition, BNNTs possess a high chemical stability, excellent mechanical properties, and high thermal conductivity. The same advantages are likely applicable to a graphene analogue-a monatomic layer of a hexagonal BN. Such unique properties make BN nanotubes and nanosheets a promising nanomaterial in a variety of potential fields such as optoelectronic nanodevices, functional composites, hydrogen accumulators, electrically insulating substrates perfectly matching the CNT, and graphene lattices. This review gives an introduction to the rich BN nanotube/nanosheet field, including the latest achievements in the synthesis, structural analyses, and property evaluations, and presents the purpose and significance of this direction in the light of the general nanotube/nanosheet developments.

  17. X-ray diffraction investigation of ultrafine boron nitride powders

    SciTech Connect

    Gurov, S.V.; Chukalin, V.I.; Rezchikova, T.V.; Torbov, V.J.; Troitskii, V.N.

    1986-01-01

    This paper presents an x-ray diffraction analysis of ultrafine boron nitride powders of different mean particle sizes. Diffraction spectra of the ultrafine boron nitride powders were obtained using a DRON-1 apparatus. The experimental facts are indicative of a turbostratic character of deformation of the hexagonal lattice of ultrafinely divided boron nitride.

  18. Longitudinal splitting of boron nitride nanotubes for the facile synthesis of high quality boron nitride nanoribbons.

    PubMed

    Erickson, Kris J; Gibb, Ashley L; Sinitskii, Alexander; Rousseas, Michael; Alem, Nasim; Tour, James M; Zettl, Alex K

    2011-08-10

    Boron nitride nanoribbons (BNNRs), the boron nitride structural equivalent of graphene nanoribbons (GNRs), are predicted to possess unique electronic and magnetic properties. We report the synthesis of BNNRs through the potassium-intercalation-induced longitudinal splitting of boron nitride nanotubes (BNNTs). This facile, scalable synthesis results in narrow (down to 20 nm), few sheet (typically 2-10), high crystallinity BNNRs with very uniform widths. The BNNRs are at least 1 μm in length with minimal defects within the ribbon plane and along the ribbon edges.

  19. Low pressure growth of cubic boron nitride films

    NASA Technical Reports Server (NTRS)

    Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

    1997-01-01

    A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition. The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride. The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

  20. Boron nitride nanotubes for spintronics.

    PubMed

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  1. Boron Nitride Nanotubes for Spintronics

    PubMed Central

    Dhungana, Kamal B.; Pati, Ranjit

    2014-01-01

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics. PMID:25248070

  2. Ultrahard nanotwinned cubic boron nitride.

    PubMed

    Tian, Yongjun; Xu, Bo; Yu, Dongli; Ma, Yanming; Wang, Yanbin; Jiang, Yingbing; Hu, Wentao; Tang, Chengchun; Gao, Yufei; Luo, Kun; Zhao, Zhisheng; Wang, Li-Min; Wen, Bin; He, Julong; Liu, Zhongyuan

    2013-01-17

    Cubic boron nitride (cBN) is a well known superhard material that has a wide range of industrial applications. Nanostructuring of cBN is an effective way to improve its hardness by virtue of the Hall-Petch effect--the tendency for hardness to increase with decreasing grain size. Polycrystalline cBN materials are often synthesized by using the martensitic transformation of a graphite-like BN precursor, in which high pressures and temperatures lead to puckering of the BN layers. Such approaches have led to synthetic polycrystalline cBN having grain sizes as small as ∼14 nm (refs 1, 2, 4, 5). Here we report the formation of cBN with a nanostructure dominated by fine twin domains of average thickness ∼3.8 nm. This nanotwinned cBN was synthesized from specially prepared BN precursor nanoparticles possessing onion-like nested structures with intrinsically puckered BN layers and numerous stacking faults. The resulting nanotwinned cBN bulk samples are optically transparent with a striking combination of physical properties: an extremely high Vickers hardness (exceeding 100 GPa, the optimal hardness of synthetic diamond), a high oxidization temperature (∼1,294 °C) and a large fracture toughness (>12 MPa m(1/2), well beyond the toughness of commercial cemented tungsten carbide, ∼10 MPa m(1/2)). We show that hardening of cBN is continuous with decreasing twin thickness down to the smallest sizes investigated, contrasting with the expected reverse Hall-Petch effect below a critical grain size or the twin thickness of ∼10-15 nm found in metals and alloys.

  3. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    SciTech Connect

    Si, M. S.; Gao, Daqiang E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng E-mail: xueds@lzu.edu.cn; Liu, Yushen; Deng, Xiaohui; Zhang, G. P.

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  4. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets.

    PubMed

    Si, M S; Gao, Daqiang; Yang, Dezheng; Peng, Yong; Zhang, Z Y; Xue, Desheng; Liu, Yushen; Deng, Xiaohui; Zhang, G P

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  5. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    NASA Astrophysics Data System (ADS)

    Si, M. S.; Gao, Daqiang; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng; Liu, Yushen; Deng, Xiaohui; Zhang, G. P.

    2014-05-01

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  6. Powdered Hexagonal Boron Nitride Reducing Nanoscale Wear

    NASA Astrophysics Data System (ADS)

    Chkhartishvili, L.; Matcharashvili, T.; Esiava, R.; Tsagareishvili, O.; Gabunia, D.; Margiev, B.; Gachechiladze, A.

    2013-05-01

    A morphology model is suggested for nano-powdered hexagonal boron nitride that can serve as an effective solid additive to liquid lubricants. It allows to estimate the specific surface, that is a hard-to-measure parameter, based on average size of powder particles. The model can be used also to control nanoscale wear processes.

  7. Boron Nitride Nanotubes for Engineering Applications

    NASA Technical Reports Server (NTRS)

    Hurst, Janet; Hull, David; Gorican, Daniel

    2005-01-01

    Boron nitride nanotubes (BNNT) are of significant interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted wide attention. Both materials have potentially unique and important properties for structural and electronic applications. However of even more consequence than their similarities may be the complementary differences between carbon and boron nitride nanotubes While BNNT possess a very high modulus similar to CNT, they also possess superior chemical and thermal stability. Additionally, BNNT have more uniform electronic properties, with a uniform band gap of 5.5 eV while CNT vary from semi-conductive to highly conductive behavior. Boron nitride nanotubes have been synthesized both in the literature and at NASA Glenn Research Center, by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistent large scale production of a reliable product has proven difficult. Progress in the reproducible synthesis of 1-2 gram sized batches of boron nitride nanotubes will be discussed as well as potential uses for this unique material.

  8. Boron nitride solid state neutron detector

    DOEpatents

    Doty, F. Patrick

    2004-04-27

    The present invention describes an apparatus useful for detecting neutrons, and particularly for detecting thermal neutrons, while remaining insensitive to gamma radiation. Neutrons are detected by direct measurement of current pulses produced by an interaction of the neutrons with hexagonal pyrolytic boron nitride.

  9. Electronic structure study on 2D hydrogenated Icosagens nitride nanosheets

    NASA Astrophysics Data System (ADS)

    Ramesh, S.; Marutheeswaran, S.; Ramaclus, Jerald V.; Paul, Dolon Chapa

    2014-12-01

    Metal nitride nanosheets has attracted remarkable importance in surface catalysis due to its characteristic ionic nature. In this paper, using density functional theory, we investigate geometric stability and electronic properties of hydrogenated Icosagen nitride nanosheets. Binding energy of the sheets reveals hydrogenation is providing more stability. Band structure of the hydrogenated sheets is found to be n-type semiconductor. Partial density of states shows metals (B, Al, Ga and In) and its hydrogens dominating in the Fermi region. Mulliken charge analysis indications that hydrogenated nanosheets are partially hydridic surface nature except boron nitride.

  10. A reduction nitridation route to boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Chen, X.; Wang, X.; Liu, J.; Wang, Z.; Qian, Y.

    2005-10-01

    Multiwalled boron nitride nanotubes were synthesized through a simple reduction nitridation route, in which boron trifluoride etherate ((C2H5)2OBF3) and sodium azide (NaN3) were used as reactants in the presence of Fe-Ni powder at 600 °C for 12 h. The obtained BN nanotubes have an average outer diameter of 60 nm, an average inner diameter of 30 nm, and an average length up to 300 nm. Some nanobamboo structured BN were found coexisting with the BN nanotubes. The experimental results show that the reaction temperature and Fe-Ni powder play important roles in the formation of BN nanotubes. Finally, a possible formation mechanism is also discussed.

  11. Boron Nitride Nanotubes-Reinforced Glass Composites

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam; Hurst, Janet B.; Choi, Sung R.

    2005-01-01

    Boron nitride nanotubes of significant lengths were synthesized by reaction of boron with nitrogen. Barium calcium aluminosilicate glass composites reinforced with 4 weight percent of BN nanotubes were fabricated by hot pressing. Ambient-temperature flexure strength and fracture toughness of the glass-BN nanotube composites were determined. The strength and fracture toughness of the composite were higher by as much as 90 and 35 percent, respectively, than those of the unreinforced glass. Microscopic examination of the composite fracture surfaces showed pullout of the BN nanotubes. The preliminary results on the processing and improvement in mechanical properties of BN nanotube reinforced glass matrix composites are being reported here for the first time.

  12. Low-loss binder for hot pressing boron nitride

    DOEpatents

    Maya, Leon

    1991-01-01

    Borazine derivatives used as low-loss binders and precursors for making ceramic boron nitride structures. The derivative forms the same composition as the boron nitride starting material, thereby filling the voids with the same boron nitride material upon forming and hot pressing. The derivatives have a further advantage of being low in carbon thus resulting in less volatile byproduct that can result in bubble formation during pressing.

  13. Synthesis of boron nitride nanotubes by boron ink annealing

    NASA Astrophysics Data System (ADS)

    Li, Lu Hua; Chen, Ying; Glushenkov, Alexey M.

    2010-03-01

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs.

  14. Synthesis of boron nitride nanotubes by boron ink annealing.

    PubMed

    Li, Lu Hua; Chen, Ying; Glushenkov, Alexey M

    2010-03-12

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs.

  15. Boron Nitride and Silicon Nitride Systems

    DTIC Science & Technology

    1991-02-01

    2381.43 [85VilJ 13-B a=1098.B6 [SiCre) at 2.4atCr c=2385.14 Cr aB oF40 a=1470.6 (879mi) 򒼎* Fddd b= 741.33 o -Kn ZB o = 425.35 CrwBq t132 a= 546.40...2095* CMOs b= 788.89 CrB 0: 293.33 Cr vB4 0114 a= 298.58 [879miJ * 2075* Iam b=1302.2 TaB94 o = 295.25 135 CraBs oC20 a= 302.84 [870kaJ Cues b=1811.5...1-2x)*+13700(1-2x)’) 0.3632 Cr 20 o ., AtG : -30663.4+15.22 T (78Fro] 138 Fig.l: The binary system Cr 8 ; based on [7lPra,BBMasJ and Chromium - Boron

  16. Boron nitride encapsulated graphene infrared emitters

    NASA Astrophysics Data System (ADS)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

    2016-03-01

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  17. Anomalous thermal conductivity of monolayer boron nitride

    NASA Astrophysics Data System (ADS)

    Tabarraei, Alireza; Wang, Xiaonan

    2016-05-01

    In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

  18. New nanoforms of carbon and boron nitride

    NASA Astrophysics Data System (ADS)

    Pokropivny, V. V.; Ivanovskii, A. L.

    2008-10-01

    Data on new carbon nanostructures including those based on fullerenes, nanotubes as well monolithic diamond-like nanoparticles, nanofibres, various nanocomposites, etc., published in the last decade are generalised. The experimental and theoretical data on their atomic and electronic structures, the nature of chemical bonds and physicochemical properties are discussed. These data are compared with the results obtained in studies of nanoforms of boron nitride, an isoelectronic analogue of carbon. Potential fields of applications of the new nanostructures are considered.

  19. Immobilization of proteins on boron nitride nanotubes.

    PubMed

    Zhi, Chunyi; Bando, Yoshio; Tang, Chengchun; Golberg, Dmitri

    2005-12-14

    We report for the first time that proteins are immobilized on boron nitride nanotubes. It is found that there is a natural affinity of a protein to BNNT; this means that it can be immobilized on BNNT directly, without usage of an additional coupling reagent. For the most effective immobilization, noncovalently functionalized BNNTs should be used. The effect of immobilization was studied using high-resolution transmission electron microscopy and energy dispersion spectroscopy.

  20. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    NASA Technical Reports Server (NTRS)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  1. Boron Nitride Nanosheets: novel Syntheses and Applications in polymeric Composites

    NASA Astrophysics Data System (ADS)

    Wang, Xuebin; Zhi, Chunyi; Weng, Qunhong; Bando, Yoshio; Golberg, Dmitri

    2013-11-01

    Two-dimensional (2D) boron nitride (BN) nanosheets, the rising material stars, have unique properties and amazing functionalities. The concise history of diverse synthesis routes of BN nanosheets is briefly summarized here; and the recent development towards mass production of BN nanosheets, i.e. "chemical blowing" technique relying on blowing molten polymer precursors into large polymeric bubbles and subsequent annealing into BN bubbles/nanosheets, is focused on. The abundant BN nanosheets enable their applications, especially in the representative polymeric composites with BN nanosheet additives, as particularly highlighted in this review. The highly thermoconductive insulating BN-filled composites are thus envisaged as high-performance packaging materials for electrical circuits.

  2. Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

    PubMed Central

    Drost, Robert; Kezilebieke, Shawulienu; M. Ervasti, Mikko; Hämäläinen, Sampsa K.; Schulz, Fabian; Harju, Ari; Liljeroth, Peter

    2015-01-01

    The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other. PMID:26584674

  3. Toward Edge-Defined Holey Boron Nitride Nanosheets

    NASA Technical Reports Server (NTRS)

    Lin, Yi; Liao, Yunlong; Chen, Zhongfan; Connell, John W.

    2015-01-01

    "Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

  4. Oxygen radical functionalization of boron nitride nanosheets.

    PubMed

    Sainsbury, Toby; Satti, Amro; May, Peter; Wang, Zhiming; McGovern, Ignatius; Gun'ko, Yurii K; Coleman, Jonathan

    2012-11-14

    The covalent chemical functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solution-phase oxygen radical functionalization of boron atoms in the h-BN lattice. This involves a two-step procedure to initially covalently graft alkoxy groups to boron atoms and the subsequent hydrolytic defunctionalization of the groups to yield hydroxyl-functionalized BNNSs (OH-BNNSs). Characterization of the functionalized-BNNSs using HR-TEM, Raman, UV-vis, FTIR, NMR, and TGA was performed to investigate both the structure of the BNNSs and the covalent functionalization methodology. OH-BNNSs were used to prepare polymer nanocomposites and their mechanical properties analyzed. The influence of the functional groups grafted to the surface of the BNNSs is investigated by demonstrating the impact on mechanical properties of both noncovalent and covalent bonding at the interface between the nanofiller and polymer matrixes.

  5. Dielectric screening in atomically thin boron nitride nanosheets.

    PubMed

    Li, Lu Hua; Santos, Elton J G; Xing, Tan; Cappelluti, Emmanuele; Roldán, Rafael; Chen, Ying; Watanabe, Kenji; Taniguchi, Takashi

    2015-01-14

    Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.

  6. Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

    NASA Astrophysics Data System (ADS)

    Li, Lu Hua; Santos, Elton J. G.; Xing, Tan; Cappelluti, Emmanuele; Roldán, Rafael; Chen, Ying; Watanabe, Kenji; Taniguchi, Takashi

    2015-01-01

    Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration and non-linear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.

  7. Elastic properties of various boron-nitride structures

    NASA Astrophysics Data System (ADS)

    Oh, Eun-Suok

    2011-02-01

    The stress-deformation behaviors derived from the continuum-lattice thermodynamic approach were applied to estimate the elastic properties of various boron-nitride crystals, such as boron-nitride sheets and nanotubes as well as cubic boron-nitride. The Tersoff and Tersoff-like potentials were used to describe the interatomic bond potential for the boron-nitride crystals. In this study, three sets of the Tersoff potential parameters and two sets of the Tersoff-like potential parameters from the literature were employed. Both the Tersoff potential parameters proposed by Matsunaga et al. and the Tersoff-like potential parameters proposed by Oh were best for estimating the elastic properties of boron-nitride nanotubes, including a sheet. Meanwhile, the elastic constants of c-BN calculated by the Tersoff potential parameters proposed by Sekkal et al. and the Tersofflike potential parameters proposed by Albe and Moller were in good agreement with experimental and other quantumistic calculation results.

  8. Safety Assessment of Boron Nitride as Used in Cosmetics.

    PubMed

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  9. Computational study of boron nitride nanotube synthesis: How catalyst morphology stabilizes the boron nitride bond

    NASA Astrophysics Data System (ADS)

    Riikonen, S.; Foster, A. S.; Krasheninnikov, A. V.; Nieminen, R. M.

    2009-10-01

    In an attempt to understand why catalytic methods for the growth of boron nitride nanotubes work much worse than for their carbon counterparts, we use first-principles calculations to study the energetics of elemental reactions forming N2 , B2 , and BN molecules on an iron catalyst. We observe that the local morphology of a step edge present in our nanoparticle model stabilizes the boron nitride molecule with respect to B2 due to the ability of the step edge to offer sites with different coordination simultaneously for nitrogen and boron. Our results emphasize the importance of atomic steps for a high yield chemical vapor deposition growth of BN nanotubes and may outline new directions for improving the efficiency of the method.

  10. Apparatus for the production of boron nitride nanotubes

    SciTech Connect

    Smith, Michael W; Jordan, Kevin

    2014-06-17

    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  11. Boron Nitride Nanotube: Synthesis and Applications

    NASA Technical Reports Server (NTRS)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.

    2014-01-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800 C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  12. Boron nitride nanotube: synthesis and applications

    NASA Astrophysics Data System (ADS)

    Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.

    2014-04-01

    Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA/JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800°C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

  13. Wettability of Pyrolytic Boron Nitride by Aluminum

    NASA Technical Reports Server (NTRS)

    Chiaramonte, Francis P.; Rosenthal, Bruce N.

    1991-01-01

    The wetting of pyrolytic boron nitride by molten 99.9999 percent pure aluminum was investigated by using the sessile drop method in a vacuum operating at approximately 660 micro-Pa at temperatures ranging from 700 to 1000 C. The equilibrium contact angle decreased with an increase in temperature. For temperatures at 900 C or less, the equilibrium contact angle was greater than 90 deg. At 1000 C a nonwetting-to-wetting transition occurred and the contact angle stabilized at 49 deg.

  14. Method for exfoliation of hexagonal boron nitride

    NASA Technical Reports Server (NTRS)

    Lin, Yi (Inventor); Connell, John W. (Inventor)

    2012-01-01

    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  15. Boron nitride zigzag nanoribbons: optimal thermoelectric systems.

    PubMed

    Zberecki, K; Swirkowicz, R; Barnaś, J

    2015-09-14

    Conventional and spin related thermoelectric effects in zigzag boron nitride nanoribbons are studied theoretically within the Density Functional Theory (DFT) approach. Nanoribbons with edges passivated with hydrogen, as well as those with bare edges are analyzed. It is shown that one spin channel in the nanoribbons of 0HB-0HN and 2HB-1HN types becomes nonconductive slightly above the Fermi level, and therefore such nanoribbons reveal remarkable spin related thermoelectric phenomena and are promising materials for thermoelectric nanodevices. Thermoelectricity in BN nanoribbons of other types is less efficient and therefore these materials are less interesting for applications.

  16. Boron nitride nanomaterials for thermal management applications.

    PubMed

    Meziani, Mohammed J; Song, Wei-Li; Wang, Ping; Lu, Fushen; Hou, Zhiling; Anderson, Ankoma; Maimaiti, Halidan; Sun, Ya-Ping

    2015-05-18

    Hexagonal boron nitride nanosheets (BNNs) are analogous to their two-dimensional carbon counterparts in many materials properties, in particular, ultrahigh thermal conductivity, but also offer some unique attributes, including being electrically insulating, high thermal stability, chemical and oxidation resistance, low color, and high mechanical strength. Significant recent advances in the production of BNNs, understanding of their properties, and the development of polymeric nanocomposites with BNNs for thermally conductive yet electrically insulating materials and systems are highlighted herein. Major opportunities and challenges for further studies in this rapidly advancing field are also discussed.

  17. Recent advancements in boron nitride nanotubes.

    PubMed

    Wang, Jiesheng; Lee, Chee Huei; Yap, Yoke Khin

    2010-10-01

    This article provides a concise review of the recent research advancements in boron nitride nanotubes (BNNTs) with a comprehensive list of references. As the motivation of the field, we first summarize some of the attractive properties and potential applications of BNNTs. Then, latest discoveries on the properties, applications, and synthesis of BNNTs are discussed. In particular, we focus on low-temperature and patterned growth, and mass production of BNNTs, since these are the major challenges that have hindered investigation of the properties and application of BNNTs for the past decade. Finally, perspectives of future research on BNNTs are discussed.

  18. Fe nanowire encapsulated in boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Koi, Naruhiro; Oku, Takeo; Nishijima, Masahiko

    2005-11-01

    Boron nitride (BN) nanotubes, nanohorns, nanocoils were synthesized by annealing Fe 4N and B powders at 1000 °C for 1 h in nitrogen gas atmosphere. Especially, Fe-filled BN nanotubes were produced, and investigated by high-resolution electron microscopy, high-angle annular dark-field scanning transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy, which indicates that the [110] of Fe is parallel to the BN nanotube axis. Formation mechanism of Fe-filled BN nanotube was speculated based on these results.

  19. Recent advancements in boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Jiesheng; Lee, Chee Huei; Yap, Yoke Khin

    2010-10-01

    This article provides a concise review of the recent research advancements in boron nitride nanotubes (BNNTs) with a comprehensive list of references. As the motivation of the field, we first summarize some of the attractive properties and potential applications of BNNTs. Then, latest discoveries on the properties, applications, and synthesis of BNNTs are discussed. In particular, we focus on low-temperature and patterned growth, and mass production of BNNTs, since these are the major challenges that have hindered investigation of the properties and application of BNNTs for the past decade. Finally, perspectives of future research on BNNTs are discussed.

  20. Stability analysis of zigzag boron nitride nanoribbons

    SciTech Connect

    Rai, Hari Mohan Late, Ravikiran; Saxena, Shailendra K.; Kumar, Rajesh; Sagdeo, Pankaj R.; Jaiswal, Neeraj K.; Srivastava, Pankaj

    2015-05-15

    We have explored the structural stability of bare and hydrogenated zigzag boron nitride nanoribbons (ZBNNRs). In order to investigate the structural stability, we calculate the cohesive energy for bare, one-edge and both edges H-terminated ZBNNRs with different widths. It is found that the ZBNNRs with width Nz=8 are energetically more favorable than the lower-width counterparts (Nz<8). Bare ZBNNRs have been found energetically most stable as compared to the edge terminated ribbons. Our analysis reveals that the structural stability is a function of ribbon-width and it is not affected significantly by the type of edge-passivation (one-edge or both-edges)

  1. Magnesium doping of boron nitride nanotubes

    DOEpatents

    Legg, Robert; Jordan, Kevin

    2015-06-16

    A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

  2. Non-linear excitation of quantum emitters in hexagonal boron nitride multiplayers

    NASA Astrophysics Data System (ADS)

    Schell, Andreas W.; Tran, Toan Trong; Takashima, Hideaki; Takeuchi, Shigeki; Aharonovich, Igor

    2016-12-01

    Two-photon absorption is an important non-linear process employed for high resolution bio-imaging and non-linear optics. In this work, we realize two-photon excitation of a quantum emitter embedded in a two-dimensional (2D) material. We examine defects in hexagonal boron nitride (hBN) and show that the emitters exhibit similar spectral and quantum properties under one-photon and two-photon excitation. Furthermore, our findings are important to deploy two-dimensional hexagonal boron nitride for quantum non-linear photonic applications.

  3. Two-dimensional boron nitride structures functionalization: first principles studies.

    PubMed

    Ponce-Pérez, R; Cocoletzi, Gregorio H; Takeuchi, Noboru

    2016-09-01

    Density functional theory calculations have been performed to investigate two-dimensional hexagonal boron nitride (2D hBN) structures functionalization with organic molecules. 2x2, 4x4 and 6x6 periodic 2D hBN layers have been considered to interact with acetylene. To deal with the exchange-correlation energy the generalized gradient approximation (GGA) is invoked. The electron-ion interaction is treated with the pseudopotential method. The GGA with the Perdew-Burke-Ernzerhoff (PBE) functionals together with van der Waals interactions are considered to deal with the composed systems. To investigate the functionalization two main configurations have been explored; in one case the molecule interacts with the boron atom and in the other with the nitrogen atom. Results of the adsorption energies indicate chemisorption in both cases. The total density of states (DOS) displays an energy gap in both cases. The projected DOS indicate that the B-p and N-p orbitals are those that make the most important contribution in the valence band and the H-s and C-p orbitals provide an important contribution in the conduction band to the DOS. Provided that the interactions of the acetylene with the 2D layer modify the structural and electronic properties of the hBN the possibility of structural functionalization using organic molecules may be concluded.

  4. The different adsorption mechanism of methane molecule onto a boron nitride and a graphene flakes

    SciTech Connect

    Seyed-Talebi, Seyedeh Mozhgan; Neek-Amal, M.

    2014-10-21

    Graphene and single layer hexagonal boron-nitride are two newly discovered 2D materials with wonderful physical properties. Using density functional theory, we study the adsorption mechanism of a methane molecule over a hexagonal flake of single layer hexagonal boron-nitride (h-BN) and compare the results with those of graphene. We found that independent of the used functional in our ab-initio calculations, the adsorption energy in the h-BN flake is larger than that for graphene. Despite of the adsorption energy profile of methane over a graphene flake, we show that there is a long range behavior beyond minimum energy in the adsorption energy of methane over h-BN flake. This result reveals the higher sensitivity of h-BN sheet to the adsorption of a typical closed shell molecule with respect to graphene. The latter gives insight in the recent experiments of graphene over hexagonal boron nitride.

  5. Preparation of boron nitride fiber by organic precursor method

    NASA Astrophysics Data System (ADS)

    Zhou, Yingying; Sun, Runjun; Zhang, Zhaohuan; Fan, Wei; Zhou, Dan; Sheng, Cuihong

    In this paper, boron nitride polymer precursor was made by boric acid, melamine, twelve sodium alkyl sulfate as raw materials and pure water as medium which is heated to 70 °C. Boron nitride precursor polymer was soluble in formic acid solution. The boron nitride precursor can be electrostatically spun at the voltage in 23 kV and the distance between the positive and negative poles is 15 cm. The formed fiber is very uniform. The properties of the precursors were analyzed through electron microscope, infrared spectrum, X-ray and ultraviolet spectrum. The aim of the job is to got the precursor of BN and spun it.

  6. Dimensional Crossover of Thermal Transport in Hybrid Boron Nitride Nanostructures.

    PubMed

    Sakhavand, Navid; Shahsavari, Rouzbeh

    2015-08-26

    Although boron nitride nanotubes (BNNT) and hexagonal-BN (hBN) are superb one-dimensional (1D) and 2D thermal conductors respectively, bringing this quality into 3D remains elusive. Here, we focus on pillared boron nitride (PBN) as a class of 3D BN allotropes and demonstrate how the junctions, pillar length and pillar distance control phonon scattering in PBN and impart tailorable thermal conductivity in 3D. Using reverse nonequilibrium molecular dynamics simulations, our results indicate that although a clear phonon scattering at the junctions accounts for the lower thermal conductivity of PBN compared to its parent BNNT and hBN allotropes, it acts as an effective design tool and provides 3D thermo-mutable features that are absent in the parent structures. Propelled by the junction spacing, while one geometrical parameter, e.g., pillar length, controls the thermal transport along the out-of-plane direction of PBN, the other parameter, e.g., pillar distance, dictates the gross cross-sectional area, which is key for design of 3D thermal management systems. Furthermore, the junctions have a more pronounced effect in creating a Kapitza effect in the out-of-plane direction, due to the change in dimensionality of the phonon transport. This work is the first report on thermo-mutable properties of hybrid BN allotropes and can potentially impact thermal management of other hybrid 3D BN architectures.

  7. High Temperature Oxidation of Boron Nitride. Part 1; Monolithic Boron Nitride

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan; Farmer, Serene; Moore, Arthur; Sayir, Haluk

    1997-01-01

    High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

  8. Energy Landscape of Fullerene Materials: A Comparison of Boron to Boron Nitride and Carbon

    NASA Astrophysics Data System (ADS)

    de, Sandip; Willand, Alexander; Amsler, Maximilian; Pochet, Pascal; Genovese, Luigi; Goedecker, Stefan

    2011-06-01

    Using the minima hopping global geometry optimization method on the density functional potential energy surface we show that the energy landscape of boron clusters is glasslike. Larger boron clusters have many structures which are lower in energy than the cages. This is in contrast to carbon and boron nitride systems which can be clearly identified as structure seekers. The differences in the potential energy landscape explain why carbon and boron nitride systems are found in nature whereas pure boron fullerenes have not been found. We thus present a methodology which can make predictions on the feasibility of the synthesis of new nanostructures.

  9. Quantum emission from hexagonal boron nitride monolayers

    NASA Astrophysics Data System (ADS)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J.; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing.

  10. Quantum emission from hexagonal boron nitride monolayers

    NASA Astrophysics Data System (ADS)

    Aharonovich, Igor; Tran, Toantrong; Bray, Kerem; Ford, Michael J.; Toth, Milos; MTEE Collaboration

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Here, we demonstrate room-temperature, polarized single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. The emitters emit at the red and the near infrared spectral range and exhibit narrowband ultra bright emission (~full width at half maximum of below 10 nm with more than three million counts/s). Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing.

  11. Fabrication of Boron Nitride Nanosheets by Exfoliation.

    PubMed

    Wang, Zifeng; Tang, Zijie; Xue, Qi; Huang, Yan; Huang, Yang; Zhu, Minshen; Pei, Zengxia; Li, Hongfei; Jiang, Hongbo; Fu, Chenxi; Zhi, Chunyi

    2016-06-01

    Nanomaterials with layered structures, with their intriguing properties, are of great research interest nowadays. As one of the primary two-dimensional nanomaterials, the hexagonal boron nitride nanosheet (BNNS, also called white graphene), which is an analogue of graphene, possesses various attractive properties, such as high intrinsic thermal conductivity, excellent chemical and thermal stability, and electrical insulation properties. After being discovered, it has been one of the most intensively studied two-dimensional non-carbon nanomaterials and has been applied in a wide range of applications. To support the exploration of applications of BNNSs, exfoliation, as one of the most promising approaches to realize large-scale production of BNNSs, has been intensively investigated. In this review, methods to yield BNNSs by exfoliation will be summarized and compared with other potential fabrication methods of BNNSs. In addition, the future prospects of the exfoliation of h-BN will also be discussed.

  12. Excitons in boron nitride single layer

    NASA Astrophysics Data System (ADS)

    Galvani, Thomas; Paleari, Fulvio; Miranda, Henrique P. C.; Molina-Sánchez, Alejandro; Wirtz, Ludger; Latil, Sylvain; Amara, Hakim; Ducastelle, François

    2016-09-01

    Boron nitride single layer belongs to the family of two-dimensional materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining ab initio calculations and a tight-binding Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence (π ) and conduction (π*) bands the tight-binding analysis becomes quasiquantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground-state exciton is not a genuine Frenkel exciton, but a very localized tightly bound one. The other ones are similar to those found in transition-metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.

  13. Hexagonal boron nitride and water interaction parameters

    NASA Astrophysics Data System (ADS)

    Wu, Yanbin; Wagner, Lucas K.; Aluru, Narayana R.

    2016-04-01

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  14. Three-dimensional metallic boron nitride.

    PubMed

    Zhang, Shunhong; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2013-12-04

    Boron nitride (BN) and carbon are chemical analogues of each other and share similar structures such as one-dimensional nanotubes, two-dimensional nanosheets characterized by sp(2) bonding, and three-dimensional diamond structures characterized by sp(3) bonding. However, unlike carbon which can be metallic in one, two, and three dimensions, BN is an insulator, irrespective of its structure and dimensionality. On the basis of state-of-the-art theoretical calculations, we propose a tetragonal phase of BN which is both dynamically stable and metallic. Analysis of its band structure, density of states, and electron localization function confirms the origin of the metallic behavior to be due to the delocalized B 2p electrons. The metallicity exhibited in the studied three-dimensional BN structures can lead to materials beyond conventional ceramics as well as to materials with potential for applications in electronic devices.

  15. Hexagonal boron nitride and water interaction parameters.

    PubMed

    Wu, Yanbin; Wagner, Lucas K; Aluru, Narayana R

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  16. Hydrolytic Unzipping of Boron Nitride Nanotubes in Nitric Acid

    NASA Astrophysics Data System (ADS)

    Kim, Dukeun; Muramatsu, Hiroyuki; Kim, Yoong Ahm

    2017-02-01

    Boron nitride nanoribbons (BNNRs) have very attractive electrical and optical properties due to their unique edge states and width-related properties. Herein, for the first time, BNNRs were produced by a simple reflux of boron nitride nanotubes (BNNTs) in nitric acid containing water, which had led to unzipped sidewalls through hydrolysis. Their high reactivity that originated from edges was verified via a strong interaction with methylene blue.

  17. Hydrolytic Unzipping of Boron Nitride Nanotubes in Nitric Acid.

    PubMed

    Kim, Dukeun; Muramatsu, Hiroyuki; Kim, Yoong Ahm

    2017-12-01

    Boron nitride nanoribbons (BNNRs) have very attractive electrical and optical properties due to their unique edge states and width-related properties. Herein, for the first time, BNNRs were produced by a simple reflux of boron nitride nanotubes (BNNTs) in nitric acid containing water, which had led to unzipped sidewalls through hydrolysis. Their high reactivity that originated from edges was verified via a strong interaction with methylene blue.

  18. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films

    DTIC Science & Technology

    2014-01-09

    Synthesis 1. Diborane- ammonia (B2H6-NH3- gases): Early results with these precursors were published in 2012. 5 Briefly, LPCVD growth of h-BN in a hot-wall...Approved for public release; distribution is unlimited. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films. The views, opinions and...1 ABSTRACT Number of Papers published in peer-reviewed journals: Synthesis and Characterization of Hexagonal Boron Nitride (h-BN) Films. Report Title

  19. Electrical contact to carbon nanotubes encapsulated in hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Huang, Jhao-Wun; Pan, Cheng; Tran, Son; Taniguchi, Takashi; Bockrath, Marc; Lau, Jeanie

    2015-03-01

    Hexagonal boron nitride has been an excellent platform for low dimensional materials. We have fabricated ultra clean single-walled carbon nanotube(SWNT) devices encapsulated in hexagonal boron nitride by a dry transfer technique. Contacts to the SWNTs were made by reactive ion etching to expose the ends of SWNTs, followed by metal deposition. Ohmic contacts to SWNTs were achieved. We will discuss the quality of the contacts using different combinations of metals and present latest transport data.

  20. Biaxial compressive strain engineering in graphene/boron nitride heterostructures.

    PubMed

    Pan, Wei; Xiao, Jianliang; Zhu, Junwei; Yu, Chenxi; Zhang, Gang; Ni, Zhenhua; Watanabe, K; Taniguchi, T; Shi, Yi; Wang, Xinran

    2012-01-01

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.

  1. Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures

    PubMed Central

    Pan, Wei; Xiao, Jianliang; Zhu, Junwei; Yu, Chenxi; Zhang, Gang; Ni, Zhenhua; Watanabe, K.; Taniguchi, T.; Shi, Yi; Wang, Xinran

    2012-01-01

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time. PMID:23189242

  2. Spherical boron nitride particles and method for preparing them

    DOEpatents

    Phillips, Jonathan; Gleiman, Seth S.; Chen, Chun-Ku

    2003-11-25

    Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes. The molten particles can also collide and join to form larger molten particles that lead to larger spherical and polyhedral particles.

  3. Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets

    NASA Astrophysics Data System (ADS)

    Xue, Yafang; Liu, Qian; He, Guanjie; Xu, Kaibing; Jiang, Lin; Hu, Xianghua; Hu, Junqing

    2013-01-01

    The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.

  4. Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets.

    PubMed

    Xue, Yafang; Liu, Qian; He, Guanjie; Xu, Kaibing; Jiang, Lin; Hu, Xianghua; Hu, Junqing

    2013-01-24

    The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.

  5. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  6. Boron nitride - Composition, optical properties, and mechanical behavior

    NASA Technical Reports Server (NTRS)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  7. Boron nitride: Composition, optical properties and mechanical behavior

    NASA Technical Reports Server (NTRS)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  8. Process for producing wurtzitic or cubic boron nitride

    DOEpatents

    Holt, J. Birch; Kingman, deceased, Donald D.; Bianchini, Gregory M.

    1992-01-01

    Disclosed is a process for producing wurtzitic or cubic boron nitride comprising the steps of: [A] preparing an intimate mixture of powdered boron oxide, a powdered metal selected from the group consisting of magnesium or aluminum, and a powdered metal azide; [B] igniting the mixture and bringing it to a temperature at which self-sustaining combustion occurs; [C] shocking the mixture at the end of the combustion thereof with a high pressure wave, thereby forming as a reaction product, wurtzitic or cubic boron nitride and occluded metal oxide; and, optionally [D] removing the occluded metal oxide from the reaction product. Also disclosed are reaction products made by the process described.

  9. Process for producing wurtzitic or cubic boron nitride

    DOEpatents

    Holt, J.B.; Kingman, D.D.; Bianchini, G.M.

    1992-04-28

    Disclosed is a process for producing wurtzitic or cubic boron nitride comprising the steps of: [A] preparing an intimate mixture of powdered boron oxide, a powdered metal selected from the group consisting of magnesium or aluminum, and a powdered metal azide; [B] igniting the mixture and bringing it to a temperature at which self-sustaining combustion occurs; [C] shocking the mixture at the end of the combustion thereof with a high pressure wave, thereby forming as a reaction product, wurtzitic or cubic boron nitride and occluded metal oxide; and, optionally [D] removing the occluded metal oxide from the reaction product. Also disclosed are reaction products made by the process described.

  10. Homogeneous dispersion of gallium nitride nanoparticles in a boron nitride matrix by nitridation with urea.

    PubMed

    Kusunose, Takafumi; Sekino, Tohru; Ando, Yoichi

    2010-07-01

    A Gallium Nitride (GaN) dispersed boron nitride (BN) nanocomposite powder was synthesized by heating a mixture of gallium nitrate, boric acid, and urea in a hydrogen atmosphere. Before heat treatment, crystalline phases of urea, boric acid, and gallium nitrate were recognized, but an amorphous material was produced by heat treatment at 400 degrees C, and then was transformed into GaN and turbostratic BN (t-BN) by further heat treatment at 800 degrees C. TEM obsevations of this composite powder revealed that single nanosized GaN particles were homogeneously dispersed in a BN matrix. Homogeneous dispersion of GaN nanoparticles was thought to be attained by simultaneously nitriding gallium nitrate and boric acid to GaN and BN with urea.

  11. Oxidation of Boron Nitride in Composites

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.

    1998-01-01

    Boron nitride (BN) is a prime candidate for fiber coatings in silicon carbide (SiC) fiber-reinforced SiC matrix composites. The properties of BN allow the fiber to impart beneficial composite properties to the matrix, even at elevated temperatures. The problem with BN is that it is readily attacked by oxygen. Although BN is an internal component of the composite, a matrix crack or pore can create a path for hot oxygen to attack the BN. This type of attack is not well understood. A variety of phenomena have been observed. These include borosilicate glass formation, volatilization of the BN, and under some conditions, preservation of the BN. In this study at the NASA Lewis Research Center, a series of BN materials and BN-containing model composites were methodically examined to understand the various issues dealing with the oxidation of BN in composites. Initial studies were done with a series of monolithic BN materials prepared by hot pressing and chemical vapor deposition (CVD). From these studies, we found that BN showed a strong orientation effect in oxidation and was extremely sensitive to the presence of water vapor in the environment. In addition, CVD material deposited at a high temperature showed much better oxidation behavior than CVD material deposited at a lower temperature.

  12. Terahertz conductivity of graphene on boron nitride

    NASA Astrophysics Data System (ADS)

    DaSilva, Ashley M.; Jung, Jeil; Adam, Shaffique; MacDonald, Allan H.

    2015-10-01

    The conductivity of graphene on a boron nitride substrate exhibits features in the terahertz (THz) and infrared (IR) frequency regimes that are associated with the periodic moiré pattern formed by weakly coupled two-dimensional materials. The THz and IR features are strongest when the two honeycomb lattices are orientationally aligned, and in this case they are Pauli blocked unless the Fermi level is close to ±150 meV relative to the graphene sheet Dirac point. Because the transition energies between moiré bands formed above the Dirac point are small, ac conductivity features in n -doped graphene tend to be overwhelmed by the Drude peak. The substrate-induced band splitting is larger at energies below the Dirac point, however, and it can lead to sharp features at THz and IR frequencies in p -doped graphene. In this paper, we focus on the strongest few THz and IR features, explaining how they arise from critical points in the moiré-band joint density of states, and commenting on the interval of Fermi energy over which they are active.

  13. Hyperbolic phonon polaritons in hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Dai, Siyuan

    2015-03-01

    Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. While hyperbolic responses are normally achieved with metamaterials, hexagonal boron nitride (hBN) naturally possesses this property due to the anisotropic phonons in the mid-infrared. Using scattering-type scanning near-field optical microscopy, we studied polaritonic phenomena in hBN. We performed infrared nano-imaging of highly confined and low-loss hyperbolic phonon polaritons in hBN. The polariton wavelength was shown to be governed by the hBN thickness according to a linear law persisting down to few atomic layers [Science, 343, 1125-1129 (2014)]. Additionally, we carried out the modification of hyperbolic response in heterostructures comprised of a mononlayer graphene deposited on hBN. Electrostatic gating of the top graphene layer allows for the modification of wavelength and intensity of hyperbolic phonon polaritons in bulk hBN. The physics of the modification originates from the plasmon-phonon coupling in the hyperbolic medium. Furthermore, we demonstrated the ``hyperlens'' for subdiffractional imaging and focusing using a slab of hBN.

  14. Porous Boron Nitride with Tunable Pore Size.

    PubMed

    Dai, Jun; Wu, Xiaojun; Yang, Jinlong; Zeng, Xiao Cheng

    2014-01-16

    On the basis of a global structural search and first-principles calculations, we predict two types of porous boron-nitride (BN) networks that can be built up with zigzag BN nanoribbons (BNNRs). The BNNRs are either directly connected with puckered B (N) atoms at the edge (type I) or connected with sp(3)-bonded BN chains (type II). Besides mechanical stability, these materials are predicted to be thermally stable at 1000 K. The porous BN materials entail large surface areas, ranging from 2800 to 4800 m(2)/g. In particular, type-II BN material with relatively large pores is highly favorable for hydrogen storage because the computed hydrogen adsorption energy (-0.18 eV) is very close to the optimal adsorption energy (-0.15 eV) suggested for reversible hydrogen storage at room temperature. Moreover, the type-II materials are semiconductors with width-dependent direct bandgaps, rendering the type-II BN materials promising not only for hydrogen storage but also for optoelectronic and photonic applications.

  15. Graphene nanoribbons epitaxy on boron nitride

    NASA Astrophysics Data System (ADS)

    Lu, Xiaobo; Yang, Wei; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Watanabe, Kenji; Taniguchi, Takashi; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

    2016-03-01

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ˜15 nm to ˜150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ˜20 000 cm2 V-1 s-1 for ˜100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ˜15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  16. Boron Nitride Nanostructures: Fabrication, Functionalization and Applications.

    PubMed

    Yin, Jun; Li, Jidong; Hang, Yang; Yu, Jin; Tai, Guoan; Li, Xuemei; Zhang, Zhuhua; Guo, Wanlin

    2016-06-01

    Boron nitride (BN) structures are featured by their excellent thermal and chemical stability and unique electronic and optical properties. However, the lack of controlled synthesis of quality samples and the electrically insulating property largely prevent realizing the full potential of BN nanostructures. A comprehensive overview of the current status of the synthesis of two-dimensional hexagonal BN sheets, three dimensional porous hexagonal BN materials and BN-involved heterostructures is provided, highlighting the advantages of different synthetic methods. In addition, structural characterization, functionalizations and prospective applications of hexagonal BN sheets are intensively discussed. One-dimensional BN nanoribbons and nanotubes are then discussed in terms of structure, fabrication and functionality. In particular, the existing routes in pursuit of tunable electronic and magnetic properties in various BN structures are surveyed, calling upon synergetic experimental and theoretical efforts to address the challenges for pioneering the applications of BN into functional devices. Finally, the progress in BN superstructures and novel B/N nanostructures is also briefly introduced.

  17. Low temperature growth of boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Lee, Chee Huei; Xie, Ming; Wang, Jiesheng; Khin Yap, Yoke

    2008-03-01

    Boron nitride nanotubes (BNNTs) are promising nanostuctures that will complement the applications of carbon nanotubes in various emerging areas. However, the synthesis of BNNTs is still challenging and required high growth temperatures (1500 C to 3000 C). Here we will discuss about two approaches for low temperature growth of BNNTs. First, we have reported on the growth of pure BNNTs at 600 C by a plasma-enhanced pulsed-laser deposition (PE-PLD) technique [1]. These BNNTs were grown vertically-aligned on substrates. Latest result on the effect of catalyst, growth temperatures, ambient gas pressures, substrate bias voltages and the growth mechanism will be discussed in the meeting. Secondly, effective growth of BNNTs is recently achieved by conventional thermal chemical vapor deposition (CVD). Our new CVD approach leads to effective growth of long and clean BNNTs at 1200 C. SEM, TEM, EELS, Raman, FTIR, and UV absorption data indicate that these BNNTs are having high structural ordered and a energy band gap > 5.6 eV. [1]. J. Wang et. al, Nano Lett. 5, 2528 (2005).

  18. Sonication-assisted alcoholysis of boron nitride nanotubes for their sidewalls chemical peeling.

    PubMed

    Kim, Dukeun; Nakajima, Sayuka; Sawada, Toshiki; Iwasaki, Mahiro; Kawauchi, Susumu; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Serizawa, Takeshi

    2015-04-28

    Boron nitride (BN)-based nanomaterials attract considerable attention due to their unique properties. In this study, we found that sonication treatment of multiwalled boron nitride nanotubes (BNNTs) in primary alcohols had led to chemical peeling of their sidewalls through alcoholysis, thereby producing boron nitride nanoribbons (BNNRs).

  19. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  20. Porous boron nitride nanosheets for effective water cleaning.

    PubMed

    Lei, Weiwei; Portehault, David; Liu, Dan; Qin, Si; Chen, Ying

    2013-01-01

    Effective removal of oils, organic solvents and dyes from water is of significant, global importance for environmental and water source protection. Advanced sorbent materials with excellent sorption capacity need to be developed. Here we report porous boron nitride nanosheets with very high specific surface area that exhibit excellent sorption performances for a wide range of oils, solvents and dyes. The nanostructured material absorbs up to 33 times its own weight in oils and organic solvents while repelling water. The saturated boron nitride nanosheets can be readily cleaned for reuse by burning or heating in air because of their strong resistance to oxidation. This easy recyclability further demonstrates the potential of porous boron nitride nanosheets for water purification and treatment.

  1. Elastic constants of cubic and wurtzite boron nitrides

    NASA Astrophysics Data System (ADS)

    Nagakubo, A.; Ogi, H.; Sumiya, H.; Kusakabe, K.; Hirao, M.

    2013-06-01

    We synthesized pure polycrystalline cubic boron nitride (cBN) and wurtzite boron nitride (wBN) by the direct conversion method from hexagonal boron nitride, and measured their longitudinal-wave elastic constants CL between 20 and 300 K using picosecond ultrasound spectroscopy. Their room-temperature values are 945 ± 3 GPa and 930 ± 18 GPa for cBN and wBN, respectively. The shear modulus G of cBN was also determined by combining resonance ultrasound spectroscopy and micromechanics calculation as G = 410 GPa. We performed ab-initio calculations and confirmed that the generalized gradient approximation potential fails to yield correct elastic constants, which indicated the necessity of a hybrid-functional method.

  2. Strong oxidation resistance of atomically thin boron nitride nanosheets.

    PubMed

    Li, Lu Hua; Cervenka, Jiri; Watanabe, Kenji; Taniguchi, Takashi; Chen, Ying

    2014-02-25

    Investigation of oxidation resistance of two-dimensional (2D) materials is critical for many of their applications because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layers thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C, and the starting temperature of oxygen doping/oxidation of BN nanosheets only slightly increases with the increase of nanosheet layer and depends on heating conditions. Elongated etch lines are found on the oxidized monolayer BN nanosheets, suggesting that the BN nanosheets are first cut along the chemisorbed oxygen chains and then the oxidative etching grows perpendicularly to these cut lines. The stronger oxidation resistance of BN nanosheets makes them more preferable for high-temperature applications than graphene.

  3. Formation of cubic boron-nitride by the reactive sputter deposition of boron

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; Makowiecki, D.W.; McKeman, M.A.

    1997-03-01

    Boron-nitride films are synthesized by RF magnetron sputtering boron targets where the deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are analyzed using Auger electron spectroscopy, transmission electron microscopy, nanoindentation, Raman spectroscopy and x-ray absorption spectroscopy. These techniques provide characterization of film composition, crystalline structure, hardness and chemical bonding, respectively. Reactive, rf-sputtering process parameters are established which lead to the growth of crystalline BN phases. The deposition of stable and adherent boron nitride coatings consisting of the cubic phase requires 400 `C substrate heating and the application of a 300 V negative bias.

  4. Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

    NASA Astrophysics Data System (ADS)

    Singh, Bikramjeet; Singh, Paviter; Kumar, Manjeet; Thakur, Anup; Kumar, Akshay

    2015-05-01

    Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H3BO3). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications as well boron neutron capture therapy (BNCT).

  5. Dispersible shortened boron nitride nanotubes with improved molecule-loading capacity.

    PubMed

    Zhi, Chunyi; Hanagata, Nobutaka; Bando, Yoshio; Golberg, Dmitri

    2011-09-05

    The oxidation process of boron nitride nanotubes was thoroughly investigated, and a slow oxidation characteristic was clearly revealed. Subsequently, the controllable oxidation process was utilized to break the sturdy structure of the boron nitride nanotubes to fabricate shortened nanotubes. The shortened boron nitride nanotubes were found to possess good solubility in water and many organic solvents. Further experiments demonstrated remarkably improved molecule-loading capacity of the shortened boron nitride nanotubes. These dispersible shortened boron nitride nanotubes might have the potential to be developed as effective delivery systems for various molecules, which may find applications in bio-related fields.

  6. Effective mechanical properties of hexagonal boron nitride nanosheets.

    PubMed

    Boldrin, L; Scarpa, F; Chowdhury, R; Adhikari, S

    2011-12-16

    We propose an analytical formulation to extract from energy equivalence principles the equivalent thickness and in-plane mechanical properties (tensile and shear rigidity, and Poisson's ratio) of hexagonal boron nitride (h-BN) nanosheets. The model developed provides not only very good agreement with existing data available in the open literature from experimental, density functional theory (DFT) and molecular dynamics (MD) simulations, but also highlights the specific deformation mechanisms existing in boron nitride sheets, and their difference with carbon-based graphitic systems.

  7. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    SciTech Connect

    Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos; Alfè, Dario; Lilienfeld, O. Anatole von

    2015-05-14

    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

  8. Inter-layer potential for hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2014-03-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  9. Anisotropic Nanomechanics of Boron Nitride Nanotubes: Nanostructured "Skin" Effect

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Menon, Madhu; Cho, KyeongJae

    2000-01-01

    The stiffness and plasticity of boron nitride nanotubes are investigated using generalized tight-binding molecular dynamics and ab-initio total energy methods. Due to boron-nitride BN bond buckling effects, compressed zigzag BN nanotubes are found to undergo novel anisotropic strain release followed by anisotropic plastic buckling. The strain is preferentially released towards N atoms in the rotated BN bonds. The tubes buckle anisotropically towards only one end when uniaxially compressed from both. A "skin-effect" model of smart nanocomposite materials is proposed which will localize the structural damage towards the 'skin' or surface side of the material.

  10. Synthesis of Boron Nitride Nanotubes for Engineering Applications

    NASA Technical Reports Server (NTRS)

    Hurst, Janet; Hull, David; Gorican, Dan

    2005-01-01

    Boron Nitride nanotubes (BNNT) are of interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted large amounts of attention. Both materials have potentially unique and significant properties which may have important structural and electronic applications in the future. However of even more interest than their similarities may be the differences between carbon and boron nanotubes. Whilt boron nitride nanotubes possess a very high modulus similaar to CNT, they are also more chemically and thermally inert. Additionally BNNT possess more uniform electronic properties, having a uniform band gap of approximately 5.5 eV while CNT vary from semi-conductin to conductor behavior. Boron Nitride nanotubes have been synthesized by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistently producing a reliable product has proven difficult. Progress in synthesis of 1-2 gram sized batches of Boron Nitride nanotubes will be discussed as well as potential uses for this unique material.

  11. Oxidative Etching of Hexagonal Boron Nitride Toward Nanosheets with Defined Edges and Holes.

    PubMed

    Liao, Yunlong; Tu, Kaixiong; Han, Xiaogang; Hu, Liangbing; Connell, John W; Chen, Zhongfang; Lin, Yi

    2015-09-29

    Lateral surface etching of two-dimensional (2D) nanosheets results in holey 2D nanosheets that have abundant edge atoms. Recent reports on holey graphene showed that holey 2D nanosheets can outperform their intact counterparts in many potential applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. From both fundamental and application perspectives, it is desirable to obtain holey 2D nanosheets with defined hole morphology and hole edge structures. This remains a great challenge for graphene and is little explored for other 2D nanomaterials. Here, a facile, controllable, and scalable method is reported to carve geometrically defined pit/hole shapes and edges on hexagonal boron nitride (h-BN) basal plane surfaces via oxidative etching in air using silver nanoparticles as catalysts. The etched h-BN was further purified and exfoliated into nanosheets that inherited the hole/edge structural motifs and, under certain conditions, possess altered optical bandgap properties likely induced by the enriched zigzag edge atoms. This method opens up an exciting approach to further explore the physical and chemical properties of hole- and edge-enriched boron nitride and other 2D nanosheets, paving the way toward applications that can take advantage of their unique structures and performance characteristics.

  12. Oxidative Etching of Hexagonal Boron Nitride Toward Nanosheets with Defined Edges and Holes

    NASA Astrophysics Data System (ADS)

    Liao, Yunlong; Tu, Kaixiong; Han, Xiaogang; Hu, Liangbing; Connell, John W.; Chen, Zhongfang; Lin, Yi

    2015-09-01

    Lateral surface etching of two-dimensional (2D) nanosheets results in holey 2D nanosheets that have abundant edge atoms. Recent reports on holey graphene showed that holey 2D nanosheets can outperform their intact counterparts in many potential applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. From both fundamental and application perspectives, it is desirable to obtain holey 2D nanosheets with defined hole morphology and hole edge structures. This remains a great challenge for graphene and is little explored for other 2D nanomaterials. Here, a facile, controllable, and scalable method is reported to carve geometrically defined pit/hole shapes and edges on hexagonal boron nitride (h-BN) basal plane surfaces via oxidative etching in air using silver nanoparticles as catalysts. The etched h-BN was further purified and exfoliated into nanosheets that inherited the hole/edge structural motifs and, under certain conditions, possess altered optical bandgap properties likely induced by the enriched zigzag edge atoms. This method opens up an exciting approach to further explore the physical and chemical properties of hole- and edge-enriched boron nitride and other 2D nanosheets, paving the way toward applications that can take advantage of their unique structures and performance characteristics.

  13. Oxidative Etching of Hexagonal Boron Nitride Toward Nanosheets with Defined Edges and Holes

    PubMed Central

    Liao, Yunlong; Tu, Kaixiong; Han, Xiaogang; Hu, Liangbing; Connell, John W.; Chen, Zhongfang; Lin, Yi

    2015-01-01

    Lateral surface etching of two-dimensional (2D) nanosheets results in holey 2D nanosheets that have abundant edge atoms. Recent reports on holey graphene showed that holey 2D nanosheets can outperform their intact counterparts in many potential applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. From both fundamental and application perspectives, it is desirable to obtain holey 2D nanosheets with defined hole morphology and hole edge structures. This remains a great challenge for graphene and is little explored for other 2D nanomaterials. Here, a facile, controllable, and scalable method is reported to carve geometrically defined pit/hole shapes and edges on hexagonal boron nitride (h-BN) basal plane surfaces via oxidative etching in air using silver nanoparticles as catalysts. The etched h-BN was further purified and exfoliated into nanosheets that inherited the hole/edge structural motifs and, under certain conditions, possess altered optical bandgap properties likely induced by the enriched zigzag edge atoms. This method opens up an exciting approach to further explore the physical and chemical properties of hole- and edge-enriched boron nitride and other 2D nanosheets, paving the way toward applications that can take advantage of their unique structures and performance characteristics. PMID:26416484

  14. Optical Spectroscopy of Two Dimensional Graphene and Boron Nitride

    NASA Astrophysics Data System (ADS)

    Ju, Long

    This dissertation describes the use of optical spectroscopy in studying the physical properties of two dimensional nano materials like graphene and hexagonal boron nitride. Compared to bulk materials, atomically thin two dimensional materials have a unique character that is the strong dependence of physical properties on external control. Both electronic band structure and chemical potential can be tuned in situ by electric field-which is a powerful knob in experiment. Therefore the optical study at atomic thickness scale can greatly benefit from modern micro-fabrication technique and electric control of the material properties. As will be shown in this dissertation, such control of both gemometric and physical properties enables new possibilities of optical spectroscopic measurement as well as opto-electronic studies. Other experimental techniques like electric transport and scanning tunneling microscopy and spectroscopy are also combined with optical spectroscopy to reveal the physics that is beyond the reach of each individual technique. There are three major themes in the dissertation. The first one is focused on the study of plasmon excitation of Dirac electrons in monolayer graphene. Unlike plasmons in ordinary two dimensional electron gas, plasmons of 2D electrons as in graphene obey unusual scaling laws. We fabricate graphene micro-ribbon arrays with photolithography technique and use optical absorption spectroscopy to study its absorption spectrum. The experimental result demonstrates the extraordinarily strong light-plasmon coupling and its novel dependence on both charge doping and geometric dimensions. This work provides a first glance at the fundamental properties of graphene plasmons and forms the basis of an emerging subfield of graphene research and applications such as graphene terahertz metamaterials. The second part describes the opto-electronic response of heterostructures composed of graphene and hexagonal boron nitride. We found that there is

  15. Synthesis of boron nitride nanotubes, bamboos and nanowires

    NASA Astrophysics Data System (ADS)

    Li, Luhua; Li, Chi Pui; Chen, Ying

    2008-05-01

    Boron nitride nanotubes and nanowires in high purity and large quantity have been produced using an improved ball-milling and annealing method. Boron powder was first ball milled to produce nanosized boron particles with a metastable structure. The ball-milled sample was ultrasonicated in ethanol to break up large aggregates formed during high-energy ball milling. Isothermal annealing under controlled conditions produced nanotubes in two different structures (multi-walled cylindrical and bamboo nanotubes), as well as nanowires. The formation mechanisms of various nanostructures are discussed.

  16. Highly thermally conductive papers with percolative layered boron nitride nanosheets.

    PubMed

    Zhu, Hongli; Li, Yuanyuan; Fang, Zhiqiang; Xu, Jiajun; Cao, Fangyu; Wan, Jiayu; Preston, Colin; Yang, Bao; Hu, Liangbing

    2014-04-22

    In this work, we report a dielectric nanocomposite paper with layered boron nitride (BN) nanosheets wired by one-dimensional (1D) nanofibrillated cellulose (NFC) that has superior thermal and mechanical properties. These nanocomposite papers are fabricated from a filtration of BN and NFC suspensions, in which NFC is used as a stabilizer to stabilize BN nanosheets. In these nanocomposite papers, two-dimensional (2D) nanosheets form a thermally conductive network, while 1D NFC provides mechanical strength. A high thermal conductivity has been achieved along the BN paper surface (up to 145.7 W/m K for 50 wt % of BN), which is an order of magnitude higher than that in randomly distributed BN nanosheet composites and is even comparable to the thermal conductivity of aluminum alloys. Such a high thermal conductivity is mainly attributed to the structural alignment within the BN nanosheet papers; the effects of the interfacial thermal contact resistance are minimized by the fact that the heat transfer is in the direction parallel to the interface between BN nanosheets and that a large contact area occurs between BN nanosheets.

  17. Layer-by-layer dielectric breakdown of hexagonal boron nitride.

    PubMed

    Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

    2015-01-27

    Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we report a systematic investigation of the dielectric breakdown characteristics of BN using conductive atomic force microscopy. The electric field strength was found to be ∼ 12 MV/cm, which is comparable to that of conventional SiO2 oxides because of the covalent bonding nature of BN. After the hard dielectric breakdown, the BN fractured like a flower into equilateral triangle fragments. However, when the applied voltage was terminated precisely in the middle of the dielectric breakdown, the formation of a hole that did not penetrate to the bottom metal electrode was clearly observed. Subsequent I-V measurements of the hole indicated that the BN layer remaining in the hole was still electrically inactive. On the basis of these observations, layer-by-layer breakdown was confirmed for BN with regard to both physical fracture and electrical breakdown. Moreover, statistical analysis of the breakdown voltages using a Weibull plot suggested the anisotropic formation of defects. These results are unique to layered materials and unlike the behavior observed for conventional 3D amorphous oxides.

  18. 2D metal carbides and nitrides (MXenes) for energy storage

    NASA Astrophysics Data System (ADS)

    Anasori, Babak; Lukatskaya, Maria R.; Gogotsi, Yury

    2017-01-01

    The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research.

  19. Mid-infrared polaritonic coupling between boron nitride nanotubes and graphene.

    PubMed

    Xu, Xiaoji G; Jiang, Jian-Hua; Gilburd, Leonid; Rensing, Rachel G; Burch, Kenneth S; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

    2014-11-25

    Boron nitride (BN) is considered to be a promising substrate for graphene-based devices in part because its large band gap can serve to insulate graphene in layered heterostructures. At mid-infrared frequencies, graphene supports surface plasmon polaritons (SPPs), whereas hexagonal-BN (h-BN) is found to support surface phonon polaritons (SPhPs). We report on the observation of infrared polaritonic coupling between graphene SPPs and boron nitride nanotube (BNNT) SPhPs. Infrared scattering type scanning near-field optical microscopy is used to obtain spatial distribution of the two types of polaritons at the nanoscale. The observation suggests that those polaritons interact at the nanoscale in a one-dimensional/two-dimensional (1D/2D) geometry, exchanging energy in a nonplanar configuration at the nanoscale. Control of the polaritonic interaction is achieved by adjustment of the graphene Fermi level through voltage gating. Our observation suggests that boron nitride nanotubes and graphene can interact at mid-infrared frequencies and coherently exchange their energies at the nanoscale through the overlap of mutual electric near field of surface phonon polaritons and surface plasmon polaritons. Such interaction enables the design of nano-optical devices based on BNNT-graphene polaritonics in the mid-infrared range.

  20. Amorphous boron nitride at high pressure

    NASA Astrophysics Data System (ADS)

    Durandurdu, Murat

    2016-06-01

    The pressure-induced phase transformation in hexagonal boron nitrite and amorphous boron nitrite is studied using ab initio molecular dynamics simulations. The hexagonal-to-wurtzite phase transformation is successfully reproduced in the simulation with a transformation mechanism similar to one suggested in experiment. Amorphous boron nitrite, on the other hand, gradually transforms to a high-density amorphous phase with the application of pressure. This phase transformation is irreversible because a densified amorphous state having both sp3 and sp2 bonds is recovered upon pressure release. The high-density amorphous state mainly consists of sp3 bonds and its local structure is quite similar to recently proposed intermediate boron nitrite phases, in particular tetragonal structure (P42/mnm), rather than the known the wurtzite or cubic boron nitrite due to the existence of four membered rings and edge sharing connectivity. On the basis of this finding we propose that amorphous boron nitrite might be best candidate as a starting structure to synthesize the intermediate phase(s) at high pressure and temperature (probably below 800 °C) conditions.

  1. Two-dimensional excitons in three-dimensional hexagonal boron nitride

    SciTech Connect

    Cao, X. K.; Lin, J. Y. Jiang, H. X.; Clubine, B.; Edgar, J. H.

    2013-11-04

    The recombination processes of excitons in hexagonal boron nitride (hBN) have been probed using time-resolved photoluminescence. It was found that the theory for two-dimensional (2D) exciton recombination describes well the exciton dynamics in three-dimensional hBN. The exciton Bohr radius and binding energy deduced from the temperature dependent exciton recombination lifetime is around 8 Å and 740 meV, respectively. The effective masses of electrons and holes in 2D hBN deduced from the generalized relativistic dispersion relation of 2D systems are 0.54m{sub o}, which are remarkably consistent with the exciton reduced mass deduced from the experimental data. Our results illustrate that hBN represents an ideal platform to study the 2D optical properties as well as the relativistic properties of particles in a condensed matter system.

  2. New two-dimensional boron nitride allotropes with attractive electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Shahrokhi, Masoud; Mortazavi, Bohayra; Berdiyorov, Golibjon R.

    2017-03-01

    Using first principles calculations, structural, electronic and optical properties of five new 2D boron nitride (BN) allotropes have been studied. The results exhibit that the cohesive energy for all these five new allotrope is positive such as all these systems are stable; therefore, it is possible to synthesize these structures in experiments. It is found that the band gap of all new 2D BN allotropes is smaller than the h-BN sheet. In our calculations the dielectric tensor is derived within the random phase approximation (RPA). Specifically, the dielectric function, refraction index and the loss function, of the 2D BN allotropes are calculated for both parallel and perpendicular electric field polarizations. The results show that the optical spectra are anisotropic along these two polarizations. The results obtained from our calculations are beneficial to practical applications of these 2D BN allotropes in optoelectronics and electronics.

  3. SnO2 nanoparticle-functionalized boron nitride nanotubes.

    PubMed

    Zhi, Chunyi; Bando, Yoshio; Tang, Chengchun; Golberg, Dmitri

    2006-05-04

    Boron nitride nanotubes (BNNTs) were synthesized by a carbon-free chemical vapor deposition method using boron and metal oxide as reactants. Then SnO(2) nanoparticles were functionalized on them via a simple wet chemistry method. Detailed transmission electron microscopy (TEM) observations reveal that SnO(2) nanoparticles may cover the tube surface or be encapsulated in tube channels. The lattice distances of both BNNT and SnO(2) have been changed due to the strong interactions between them. The band gap energy of SnO(2) particles is found enlarged due to the size effect and interaction with BNNTs.

  4. A simple approach to covalent functionalization of boron nitride nanotubes.

    PubMed

    Ciofani, Gianni; Genchi, Giada Graziana; Liakos, Ioannis; Athanassiou, Athanassia; Dinucci, Dinuccio; Chiellini, Federica; Mattoli, Virgilio

    2012-05-15

    A novel and simple method for the preparation of chemically functionalized boron nitride nanotubes (BNNTs) is presented. Thanks to a strong oxidation followed by the silanization of the surface through 3-aminopropyl-triethoxysilane (APTES), BNNTs exposing amino groups on their surface were successfully obtained. The efficacy of the procedure was assessed with EDS and XPS analyses, which demonstrated a successful functionalization of ~15% boron sites. This approach opens interesting perspectives for further modification of BNNTs with several kinds of molecules. Since, in particular, biomedical applications are envisaged, we also demonstrated in vitro biocompatibility and cellular up-take of the functionalized BNNTs.

  5. Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

    DTIC Science & Technology

    2014-09-01

    AFRL-RX-WP-JA-2015-0050 SYNTHESIS OF FEW-LAYER, LARGE AREA HEXAGONAL-BORON NITRIDE BY PULSED LASER DEPOSITION (POSTPRINT) Nicholas R Glavin...2014 4. TITLE AND SUBTITLE SYNTHESIS OF FEW-LAYER, LARGE AREA HEXAGONAL- BORON NITRIDE BY PULSED LASER DEPOSITION (POSTPRINT) 5a. CONTRACT NUMBER...deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (ɦ-BN) thin films on crystalline

  6. Efficient boron nitride nanotube formation via combined laser-gas flow levitation

    DOEpatents

    Whitney, R. Roy; Jordan, Kevin; Smith, Michael

    2014-03-18

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  7. Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

    NASA Technical Reports Server (NTRS)

    Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

    2014-01-01

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

  8. A comprehensive study of boron nitride nanotubes multiple synthesis from a single precursor

    NASA Astrophysics Data System (ADS)

    Ahmad, P.; Khandaker, M. U.; Amin, Y. M.

    2015-03-01

    Importance of boron nitride nanotubes due to its applications in the fields of biomedical, microelectronic mechanical systems and solid state neutron detectors has greatly increased the demand for high quality and large scale synthesis of boron nitride nanotubes. The idea of using a single precursor for multiple synthesis has been utilized and boron nitride nanotubes are synthesized from fresh as well as residual material left after first and second experimental runs. For the first time, experimental results are characterized and analyzed for their size, morphology and quality of the final product. Results thus obtained are likely to be steps toward the high yield and large scale synthesis of boron nitride nanotubes.

  9. A new interlayer potential for hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Akıner, Tolga; Mason, Jeremy K.; Ertürk, Hakan

    2016-09-01

    A new interlayer potential is developed for interlayer interactions of hexagonal boron nitride sheets, and its performance is compared with other potentials in the literature using molecular dynamics simulations. The proposed potential contains Coulombic and Lennard-Jones 6-12 terms, and is calibrated with recent experimental data including the hexagonal boron nitride interlayer distance and elastic constants. The potentials are evaluated by comparing the experimental and simulated values of interlayer distance, density, elastic constants, and thermal conductivity using non-equilibrium molecular dynamics. The proposed potential is found to be in reasonable agreement with experiments, and improves on earlier potentials in several respects. Simulated thermal conductivity values as a function of the number of layers and of temperature suggest that the proposed LJ 6-12 potential has the ability to predict some phonon behaviour during heat transport in the out-of-plane direction.

  10. Interaction of Boron Nitride Nanosheets with Model Cell Membranes.

    PubMed

    Hilder, Tamsyn A; Gaston, Nicola

    2016-06-03

    Boron nitride nanomaterials have attracted attention for biomedical applications, due to their improved biocompatibility when compared with carbon nanomaterials. Recently, graphene and graphene oxide nanosheets have been shown, both experimentally and computationally, to destructively extract phospholipids from Escherichia coli. Boron nitride nanosheets (BNNSs) have exciting potential biological and environmental applications, for example the ability to remove oil from water. These applications are likely to increase the exposure of prokaryotes and eukaryotes to BNNSs. Yet, despite their promise, the interaction between BNNSs and cell membranes has not yet been investigated. Here, all-atom molecular dynamics simulations were used to demonstrate that BNNSs are spontaneously attracted to the polar headgroups of the lipid bilayer. The BNNSs do not passively cross the lipid bilayer, most likely due to the large forces experienced by the BNNSs. This study provides insight into the interaction of BNNSs with cell membranes and may aid our understanding of their improved biocompatibility.

  11. Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

    NASA Astrophysics Data System (ADS)

    Chen, Lingxiu; He, Li; Wang, Hui Shan; Wang, Haomin; Tang, Shujie; Cong, Chunxiao; Xie, Hong; Li, Lei; Xia, Hui; Li, Tianxin; Wu, Tianru; Zhang, Daoli; Deng, Lianwen; Yu, Ting; Xie, Xiaoming; Jiang, Mianheng

    2017-03-01

    Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.

  12. Origin of band gaps in graphene on hexagonal boron nitride

    PubMed Central

    Jung, Jeil; DaSilva, Ashley M.; MacDonald, Allan H.; Adam, Shaffique

    2015-01-01

    Recent progress in preparing well-controlled two-dimensional van der Waals heterojunctions has opened up a new frontier in materials physics. Here we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behaviour by accounting first for the structural relaxation of graphene’s carbon atoms when placed on a boron nitride substrate, and then for the influence of the substrate on low-energy π-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions. PMID:25695638

  13. Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

    PubMed Central

    Chen, Lingxiu; He, Li; Wang, Hui Shan; Wang, Haomin; Tang, Shujie; Cong, Chunxiao; Xie, Hong; Li, Lei; Xia, Hui; Li, Tianxin; Wu, Tianru; Zhang, Daoli; Deng, Lianwen; Yu, Ting; Xie, Xiaoming; Jiang, Mianheng

    2017-01-01

    Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs. PMID:28276532

  14. Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches.

    PubMed

    Chen, Lingxiu; He, Li; Wang, Hui Shan; Wang, Haomin; Tang, Shujie; Cong, Chunxiao; Xie, Hong; Li, Lei; Xia, Hui; Li, Tianxin; Wu, Tianru; Zhang, Daoli; Deng, Lianwen; Yu, Ting; Xie, Xiaoming; Jiang, Mianheng

    2017-03-09

    Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.

  15. Potential applications of boron nitride nanotubes as drug delivery systems.

    PubMed

    Ciofani, Gianni

    2010-08-01

    In recent years, there has been an explosion of research in the 'bio-nano' field, with the discovery and introduction of ever more fascinating materials for applications as drug delivery systems, sensors, transducers, and so on. The author's group, for the first time in the literature, proposed boron nitride nanotubes as a valid alternative to carbon nanotubes and other kinds of inorganic materials, because of their improved chemical properties that theoretically guarantee better stability and compatibility in a biological context. In this paper, the bio-applications of boron nitride nanotubes that have emerged in the literature are summarized, with special attention given to their exploitation as safe drug delivery and targeting carriers. Finally, the possibility of combining their physical and chemical properties is approached, highlighting the features that render these innovative nanovectors unique and exceptional candidates for many bio-applications.

  16. Synthesis of boron nitride nanotubes from unprocessed colemanite.

    PubMed

    Kalay, Saban; Yilmaz, Zehra; Culha, Mustafa

    2013-01-01

    Colemanite (Ca2B6O11·5H2O) is a natural and new precursor material for the synthesis of boron nitride nanotubes (BNNTs). BNNTs have been synthesized from unprocessed colemanite for the first time. The reaction parameters such as time, catalyst type, catalyst amount and temperature were optimized. It was found that the BNNT formation follows the base growth mechanism, which was initiated with a complex of boron nitride (BN) and iron atoms. The obtained BNNTs were characterized by using SEM, TEM, and spectroscopic techniques such as UV-vis, Raman, FTIR and XRD. The BNNTs were randomly oriented and multi-walled with an outer diameter of 10-30 nm and a wall thickness of 5 nm. This novel BNNT synthesis method can be used to obtain high yield, low cost and pure BNNTs.

  17. Electrically dependent bandgaps in graphene on hexagonal boron nitride

    SciTech Connect

    Kaplan, D. Swaminathan, V.; Recine, G.

    2014-03-31

    We present first-principles calculations on the bandgap of graphene on a layer of hexagonal boron nitride in three different stacking configurations. Relative stability of the configurations is identified and bandgap tunability is demonstrated through the application of an external, perpendicularly applied electric field. We carefully examine the bandgap's sensitivity to both magnitude of the applied field as well as separation between the graphene and hexagonal boron nitride layers. Features of the band structure are examined and configuration-dependent relationships between the field and bandgap are revealed and elucidated through the atom-projected density of states. These findings suggest the potential for opening and modulating a bandgap in graphene as high as several hundred meV.

  18. Covalently functionalized hexagonal boron nitride nanosheets by nitrene addition.

    PubMed

    Sainsbury, Toby; Satti, Amro; May, Peter; O'Neill, Arlene; Nicolosi, Valeria; Gun'ko, Yurii K; Coleman, Jonathan N

    2012-08-27

    The covalent functionalization of exfoliated hexagonal boron nitride (h-BN) nanosheets by nitrene addition is described. Integration of functionalized h-BN nanosheets within a polycarbonate matrix is demonstrated and was found to afford significant increases in mechanical properties. This integration methodology was further extended by the covalent modification of the h-BN nanosheets with polymer chains of a polycarbonate analogue, and the integration of the polymer modified h-BN within the polymer matrix.

  19. Method for forming monolayer graphene-boron nitride heterostructures

    DOEpatents

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2016-08-09

    A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

  20. Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

    SciTech Connect

    Singh, Bikramjeet; Singh, Paviter; Kumar, Akshay; Kumar, Manjeet; Thakur, Anup

    2015-05-15

    Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H{sub 3}BO{sub 3}). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications as well boron neutron capture therapy (BNCT)

  1. Study the gas sensing properties of boron nitride nanosheets

    SciTech Connect

    Sajjad, Muhammad; Feng, Peter

    2014-01-01

    Graphical abstract: - Highlights: • We synthesized boron nitride nanosheets (BNNSs) on silicon substrate. • We analyzed gas sensing properties of BNNSs-based gas-sensor device. • CH{sub 4} gas is used to measure gas-sensing properties of the device. • Quick response and recovery time of the device is recorded. • BNNSs showed excellent sensitivity to the working gas. - Abstract: In the present communication, we report on the synthesis of boron nitride nanosheets (BNNSs) and study of their gas sensing properties. BNNSs are synthesized by irradiating pyrolytic hexagonal boron nitride (h-BN) target using CO{sub 2} laser pulses. High resolution transmission electron microscopic measurements (HRTEM) revealed 2-dientional honeycomb crystal lattice structure of BNNSs. HRTEM, electron diffraction, XRD and Raman scattering measurements clearly identified h-BN. Gas sensing properties of synthesized BNNSs were analyzed with prototype gas sensor using methane as working gas. A systematic response curve of the sensor is recorded in each cycle of gas “in” and “out”; suggesting excellent sensitivity and high performance of BNNSs-based gas-sensor.

  2. Synthesis of vertically aligned boron nitride nanosheets using CVD method

    SciTech Connect

    Zhang, Chao; Hao, Xiaopeng; Wu, Yongzhong; Du, Miao

    2012-09-15

    Highlights: ► The synthesized boron nitride nanosheets (BNNSs) are vertically aligned and very thin. ► No electrical field is applied in the CVD process. ► The thin BNNSs show a low turn-on field of 6.5 V μm{sup −1} and emit strong UV light. -- Abstract: Boron nitride nanosheets (BNNSs) protruding from boron nitride (BN) films were synthesized on silicon substrates by chemical vapor deposition technique from a gas mixture of BCl{sub 3}–NH{sub 3}–H{sub 2}–N{sub 2}. Parts of the as-grown nanosheets were vertically aligned on the BN films. The morphology and structure of the synthesized BNNSs were characterized by scanning electron microscopy, transmission electron microscopy, and Fourier transformation infrared spectroscopy. The chemical composition was studied by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. Cathodoluminescence spectra revealed that the product emitted strong UV light with a broad band ranging from 250 to 400 nm. Field-emission characteristic of the product shows a low turn-on field of 6.5 V μm{sup −1}.

  3. Tribological properties of boron nitride synthesized by ion beam deposition

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  4. Preferable orientation of spherical fullerene inside boron nitride nanotubes.

    PubMed

    Ma, Fengxian; Yao, Zhen; Yao, Mingguang; Liu, Ran; Zou, Bo; Cui, Tian; Liu, Bingbing

    2013-02-13

    We provide a systematic analytical method for preferable orientation calculations of spherical fullerenes in single-walled boron nitride nanotubes. Based on the reaction energy calculations, both the minimum entering radii and the energetically favorable radii for encapsulating C(60), C(80) and C(180) molecules in boron nitride nanotubes have been proposed. The van der Waals energy as a function of the various orientations of the encapsulated fullerene molecule is shown by a potential contour map, from which we find that the low-energy state appears in the symmetry axis orientation of the encapsulated fullerene molecules with a different size. We thus propose a new systematic analytical method for optimal orientation predictions of spherical fullerenes in the confinement condition, which is based on the symmetry axis but not the method proposed in previous literature, such as using pentagons, double-bonds, and hexagons to analyze the preferable orientation of confined C(60). Our results show that the C(60) molecule in boron nitride nanotubes exhibits three lowest energy states corresponding to the five-, two- and three-fold axis orientations in three radii intervals, while only two preferable orientations-the five- and three-fold axis orientations have been observed for encapsulated C(80) and C(180) molecules.

  5. Hollow boron nitride nanospheres as boron reservoir for prostate cancer treatment

    NASA Astrophysics Data System (ADS)

    Li, Xia; Wang, Xiupeng; Zhang, Jun; Hanagata, Nobutaka; Wang, Xuebin; Weng, Qunhong; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

    2017-01-01

    High global incidence of prostate cancer has led to a focus on prevention and treatment strategies to reduce the impact of this disease in public health. Boron compounds are increasingly recognized as preventative and chemotherapeutic agents. However, systemic administration of soluble boron compounds is hampered by their short half-life and low effectiveness. Here we report on hollow boron nitride (BN) spheres with controlled crystallinity and boron release that decrease cell viability and increase prostate cancer cell apoptosis. In vivo experiments on subcutaneous tumour mouse models treated with BN spheres demonstrated significant suppression of tumour growth. An orthotopic tumour growth model was also utilized and further confirmed the in vivo anti-cancer efficacy of BN spheres. Moreover, the administration of hollow BN spheres with paclitaxel leads to synergetic effects in the suppression of tumour growth. The work demonstrates that hollow BN spheres may function as a new agent for prostate cancer treatment.

  6. Hollow boron nitride nanospheres as boron reservoir for prostate cancer treatment.

    PubMed

    Li, Xia; Wang, Xiupeng; Zhang, Jun; Hanagata, Nobutaka; Wang, Xuebin; Weng, Qunhong; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

    2017-01-06

    High global incidence of prostate cancer has led to a focus on prevention and treatment strategies to reduce the impact of this disease in public health. Boron compounds are increasingly recognized as preventative and chemotherapeutic agents. However, systemic administration of soluble boron compounds is hampered by their short half-life and low effectiveness. Here we report on hollow boron nitride (BN) spheres with controlled crystallinity and boron release that decrease cell viability and increase prostate cancer cell apoptosis. In vivo experiments on subcutaneous tumour mouse models treated with BN spheres demonstrated significant suppression of tumour growth. An orthotopic tumour growth model was also utilized and further confirmed the in vivo anti-cancer efficacy of BN spheres. Moreover, the administration of hollow BN spheres with paclitaxel leads to synergetic effects in the suppression of tumour growth. The work demonstrates that hollow BN spheres may function as a new agent for prostate cancer treatment.

  7. Hollow boron nitride nanospheres as boron reservoir for prostate cancer treatment

    PubMed Central

    Li, Xia; Wang, Xiupeng; Zhang, Jun; Hanagata, Nobutaka; Wang, Xuebin; Weng, Qunhong; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

    2017-01-01

    High global incidence of prostate cancer has led to a focus on prevention and treatment strategies to reduce the impact of this disease in public health. Boron compounds are increasingly recognized as preventative and chemotherapeutic agents. However, systemic administration of soluble boron compounds is hampered by their short half-life and low effectiveness. Here we report on hollow boron nitride (BN) spheres with controlled crystallinity and boron release that decrease cell viability and increase prostate cancer cell apoptosis. In vivo experiments on subcutaneous tumour mouse models treated with BN spheres demonstrated significant suppression of tumour growth. An orthotopic tumour growth model was also utilized and further confirmed the in vivo anti-cancer efficacy of BN spheres. Moreover, the administration of hollow BN spheres with paclitaxel leads to synergetic effects in the suppression of tumour growth. The work demonstrates that hollow BN spheres may function as a new agent for prostate cancer treatment. PMID:28059072

  8. A high-yield ionic liquid-promoted synthesis of boron nitride nanosheets by direct exfoliation.

    PubMed

    Morishita, Takuya; Okamoto, Hirotaka; Katagiri, Yoshihide; Matsushita, Mitsumasa; Fukumori, Kenzo

    2015-08-04

    Boron nitride nanosheets (BNNSs) with micron-sized edges were prepared in high yields by direct exfoliation of bulk hexagonal boron nitrides using ionic liquids (ILs). The ILs strongly attached onto BNNS surfaces, and dramatically enhanced the exfoliation, giving highly concentrated BNNS dispersions (∼1.9 mg mL(-1)) and yields reaching ∼50%.

  9. Synthesis of Hexagonal Boron Nitride Mono layer: Control of Nucleation and Crystal Morphology

    SciTech Connect

    Stehle, Yijing Y.; Meyer, III, Harry M.; Unocic, Raymond R.; Kidder, Michelle; Polyzos, Georgios; Datskos, Panos G.; Jackson, Roderick K.; Vlassiouk, Ivan V.

    2015-11-10

    Mono layer hexagonal boron nitride (hBN) attracts significant attention due to the potential to be used as a complementary two-dimensional dielectric in fabrication of functional 2D heterostructures. Here we investigate the growth stages of the hBN single crystals and show that hBN crystals change their shape from triangular to truncated triangular and further to hexagonal depending on copper substrate distance from the precursor. We suggest that the observed hBN crystal shape variation is affected by the ratio of boron to nitrogen active species concentrations on the copper surface inside the CVD reactor. Strong temperature dependence reveals the activation energies for the hBN nucleation process of similar to 5 eV and crystal growth of similar to 3.5 eV. We also show that the resulting h-BN film morphology is strongly affected by the heating method of borazane precursor and the buffer gas. Elucidation of these details facilitated synthesis of high quality large area monolayer hexagonal boron nitride by atmospheric pressure chemical vapor deposition on copper using borazane as a precursor.

  10. Synthesis of Hexagonal Boron Nitride Mono layer: Control of Nucleation and Crystal Morphology

    DOE PAGES

    Stehle, Yijing Y.; Meyer, III, Harry M.; Unocic, Raymond R.; ...

    2015-11-10

    Mono layer hexagonal boron nitride (hBN) attracts significant attention due to the potential to be used as a complementary two-dimensional dielectric in fabrication of functional 2D heterostructures. Here we investigate the growth stages of the hBN single crystals and show that hBN crystals change their shape from triangular to truncated triangular and further to hexagonal depending on copper substrate distance from the precursor. We suggest that the observed hBN crystal shape variation is affected by the ratio of boron to nitrogen active species concentrations on the copper surface inside the CVD reactor. Strong temperature dependence reveals the activation energies formore » the hBN nucleation process of similar to 5 eV and crystal growth of similar to 3.5 eV. We also show that the resulting h-BN film morphology is strongly affected by the heating method of borazane precursor and the buffer gas. Elucidation of these details facilitated synthesis of high quality large area monolayer hexagonal boron nitride by atmospheric pressure chemical vapor deposition on copper using borazane as a precursor.« less

  11. Formation of boron nitride and boron carbide composite by nitrogen implantation at elevated temperature

    NASA Astrophysics Data System (ADS)

    Yu, N.; Romero-Borja, F.; Zhang, Z. H.; Cui, X. T.; Liu, J. R.; Wood, L. T.; Chu, W. K.; Marton, D.; Rabalais, J. W.; Forster, K. M.; Reeber, R. R.

    1993-09-01

    Boron carbide (B4C) is a wear resistant material with hardness slightly less than that of diamond. It has an excellent strength to weight ratio and relatively high toughness under controlled processing. These essential mechanical properties make B4C an ideal candidate for cutting tool and bearing applications. We will demonstrate that hexagonal boron nitride (h-BN), a good solid lubricant, can be formed on B4C surfaces through high temperature (850 °C) nitrogen ion implantation. The formation of composite B4C and h-BN on the B4C surface can potentially reduce surface friction coefficients, making the material more attractive for tribological applications.

  12. Consolidation of cubic and hexagonal boron nitride composites

    SciTech Connect

    Du Frane, W. L.; Cervantes, O.; Ellsworth, G. F.; Kuntz, J. D.

    2015-12-08

    When we Consolidate cubic boron nitride (cBN) it typically requires either a matrix of metal bearing materials that are undesirable for certain applications, or very high pressures within the cBN phase stability field that are prohibitive to manufacturing size and cost. We present new methodology for consolidating high stiffness cBN composites within a hexagonal boron nitride (hBN) matrix (15–25 vol%) with the aid of a binder phase (0–6 vol%) at moderate pressures (0.5–1.0 GPa) and temperatures (900–1300 °C). The composites are demonstrated to be highly tailorable with a range of compositions and resulting physical/mechanical properties. Ultrasonic measurements indicate that in some cases these composites have elastic mechanical properties that exceed those of the highest strength steel alloys. Moreover, two methods were identified to prevent phase transformation of the metastable cBN phase into hBN during consolidation: 1. removal of hydrocarbons, and 2. increased cBN particle size. Lithium tetraborate worked better as a binder than boron oxide, aiding consolidation without enhancing cBN to hBN phase transformation kinetics. These powder mixtures consolidated within error of their full theoretical mass densities at 1 GPa, and had only slightly lower densities at 0.5 GPa. This shows potential for consolidation of these composites into larger parts, in a variety of shapes, at even lower pressures using more conventional manufacturing methods, such as hot-pressing.

  13. Friction and transfer behavior of pyrolytic boron nitride in contact with various metals

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted with pyrolytic boron nitride in sliding contact with itself and various metals. Auger emission spectroscopy was used to monitor transfer of pyrolytic boron nitride to metals and metals to pyrolytic boron nitride. Results indicate that the friction coefficient for pyrolytic boron nitride in contact with metals can be related to the chemical activity of the metals and more particularly to the d valence bond character of the metal. Transfer was found to occur to all metals except silver and gold and the amount of transfer was less in the presence than in the absence of metal oxide. Friction was less for pyrolytic boron nitride in contact with a metal in air than in vacuum.

  14. Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

    NASA Astrophysics Data System (ADS)

    Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

    2016-07-01

    Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks.

  15. Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

    PubMed Central

    Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

    2016-01-01

    Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks. PMID:27388704

  16. Salt-Templated Synthesis of 2D Metallic MoN and Other Nitrides.

    PubMed

    Xiao, Xu; Yu, Huimin; Jin, Huanyu; Wu, Menghao; Fang, Yunsheng; Sun, Jiyu; Hu, Zhimi; Li, Tianqi; Wu, Jiabin; Huang, Liang; Gogotsi, Yury; Zhou, Jun

    2017-02-28

    Two-dimensional (2D) transition-metal nitrides just recently entered the research arena, but already offer a potential for high-rate energy storage, which is needed for portable/wearable electronics and many other applications. However, a lack of efficient and high-yield synthesis methods for 2D metal nitrides has been a major bottleneck for the manufacturing of those potentially very important materials, and only MoN, Ti4N3, and GaN have been reported so far. Here we report a scalable method that uses reduction of 2D hexagonal oxides in ammonia to produce 2D nitrides, such as MoN. MoN nanosheets with subnanometer thickness have been studied in depth. Both theoretical calculation and experiments demonstrate the metallic nature of 2D MoN. The hydrophilic restacked 2D MoN film exhibits a very high volumetric capacitance of 928 F cm(-3) in sulfuric acid electrolyte with an excellent rate performance. We expect that the synthesis of metallic 2D MoN and two other nitrides (W2N and V2N) demonstrated here will provide an efficient way to expand the family of 2D materials and add many members with attractive properties.

  17. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect

    Atsumi, Katsuhiro; Inoue, Yoku; Nakano, Takayuki; Mimura, Hidenori; Aoki, Toru

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  18. Recent progress in synthesis of two-dimensional hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Wang, Haolin; Zhao, Yajuan; Xie, Yong; Ma, Xiaohua; Zhang, Xingwang

    2017-03-01

    Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D h-BN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed. Project supported by the National Natural Science Foundation of China (Nos. 61376007, 61674137) and the National Key Research and Development Program of China (No. 2016YFB0400802).

  19. Electron knock-on damage in hexagonal boron nitride monolayers

    SciTech Connect

    Kotakoski, J.; Lehtinen, O.; Jin, C. H.; Suenaga, K.; Krasheninnikov, A. V.

    2010-09-15

    We combine first-principles molecular-dynamics simulations with high-resolution transmission electron microscopy experiments to draw a detailed microscopic picture of irradiation effects in hexagonal boron nitride (h-BN) monolayers. We determine the displacement threshold energies for boron and nitrogen atoms in h-BN, which differ significantly from the tight-binding estimates found in the literature and remove ambiguity from the interpretation of the experimental results. We further develop a kinetic Monte Carlo model which allows to extend the simulations to macroscopic time scales and make a direct comparison between theory and experiments. Our results provide a comprehensive picture of the response of h-BN nanostructures to electron irradiation.

  20. Facile synthesis of boron nitride nanotubes and improved electrical conductivity.

    PubMed

    Chen, Yongjun; Luo, Lijie; Zhou, Longchang; Mo, Libin; Tong, Zhangfa

    2010-02-01

    A layer of catalyst film on substrate is usually required during the vapor-liquid-solid (VLS) growth of one-dimensional (1D) nanomaterials. In this work, however, a novel approach for synthesizing high-purity bamboo-like boron nitride (BN) nanotubes directly on commercial stainless steel foils was demonstrated. Synthesis was realized by heating boron and zinc oxide (ZnO) powders at 1200 degrees C under a mixture gas flow of nitrogen and hydrogen. The stainless steel foils played an additional role of catalyst besides the substrate during the VLS growth of the nanotubes. In addition, the electrical conductivity of the BN nanotubes was efficiently improved in a simple way by coating with Au and Pd nanoparticles. The decorated BN nanotubes may find potential applications in catalysts, sensors and nanoelectronics.

  1. Computer Simulation of Synthesis of Boron-Nitride Nanostructures

    NASA Astrophysics Data System (ADS)

    Krstic, Predrag; Han, Longtao

    2016-10-01

    Synthesis of boron-nitride fullerenes, nano-cocoons and nano-cages by self-organization of BN molecules in a high-temperature plasma is simulated with the DFT tight-binding method. No boron nano-cluster or catalytic nanoparticles are needed to initiate this process. By varying the plasma temperature, incoming flux of BN molecule, and the total time of growth, we can simulate growth of sp2 cages of various shape, size and quality. Role of hydrogen in the syntheses is also considered, with the simulation of HBNH and H2BNH2 molecules as feedstock. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Material Sciences and Engineering Division.

  2. Carbon nanotube quantum dots on hexagonal boron nitride

    SciTech Connect

    Baumgartner, A. Abulizi, G.; Gramich, J.; Schönenberger, C.; Watanabe, K.; Taniguchi, T.

    2014-07-14

    We report the fabrication details and low-temperature characteristics of carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

  3. Surface enhanced Raman study of cubic boron nitride

    NASA Astrophysics Data System (ADS)

    Zhang, Xu

    2003-05-01

    Surface enhancement for Raman scattering of single crystal cubic boron nitride (c-BN) (1 1 1) and polycrystalline cubic BN was observed by depositing silver nanoparticles on the substrate surface. The c-BN samples were subjected to hydrogen plasma, as well as deuterium plasma treatment to observe the isotopic shift of surface binding species. Characteristic Raman peaks corresponding to the molecular vibrational modes of surface chemisorbed hydrogen and deuterium could be observed for the first time and were assigned according to ab initio molecular orbital calculations.

  4. Boron nitride nanosheets as oxygen-atom corrosion protective coatings

    SciTech Connect

    Yi, Min; Shen, Zhigang; Zhao, Xiaohu; Liang, Shuaishuai; Liu, Lei

    2014-04-07

    The research of two-dimensional nanomaterials for anticorrosion applications is just recently burgeoning. Herein, we demonstrate the boron nitride nanosheets (BNNSs) coatings for protecting polymer from oxygen-atom corrosion. High-quality BNNSs, which are produced by an effective fluid dynamics method with multiple exfoliation mechanisms, can be assembled into coatings with controlled thickness by vacuum filtration. After exposed in atom oxygen, the naked polymer is severely corroded with remarkable mass loss, while the BNNSs-coated polymer remains intact. Barrier and bonding effects of the BNNSs are responsible for the coating's protective performance. These preliminary yet reproducible results pave a way for resisting oxygen-atom corrosion.

  5. Preparation of superhydrophobic nanodiamond and cubic boron nitride films

    NASA Astrophysics Data System (ADS)

    Zhou, Y. B.; Yang, Y.; Liu, W. M.; Ye, Q.; He, B.; Zou, Y. S.; Wang, P. F.; Pan, X. J.; Zhang, W. J.; Bello, I.; Lee, S. T.

    2010-09-01

    Superhydrophobic surfaces were achieved on the hardest and the second hardest materials, diamond and cubic boron nitride (cBN) films. Various surface nanostructures of nanocrystalline diamond (ND) and cBN films were constructed by carrying out bias-assisted reactive ion etching in hydrogen/argon plasmas; and it is shown that surface nanostructuring may enhance dramatically the hydrophobicity of ND and cBN films. Together with surface fluorination, superhydrophobic ND and cBN surfaces with a contact angle greater than 150° and a sliding angle smaller than 10° were demonstrated. The origin of hydrophobicity enhancement is discussed based on the Cassie model.

  6. Excellent oxidation endurance of boron nitride nanotube field electron emitters

    SciTech Connect

    Song, Yenan; Song, Yoon-Ho; Milne, William I.; Jin Lee, Cheol

    2014-04-21

    Boron nitride nanotubes (BNNTs) are considered as a promising cold electron emission material owing to their negative electron affinity. BNNT field emitters show excellent oxidation endurance after high temperature thermal annealing of 600 °C in air ambient. There is no damage to the BNNTs after thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. The thermally annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm{sup 2} and show very robust emission stability. The BNNTs can be a promising emitter material for field emission devices under harsh oxygen environments.

  7. Corrosion resistance of monolayer hexagonal boron nitride on copper

    NASA Astrophysics Data System (ADS)

    Mahvash, F.; Eissa, S.; Bordjiba, T.; Tavares, A. C.; Szkopek, T.; Siaj, M.

    2017-02-01

    Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating.

  8. Cellulose nanofibrils (CNF) filled boron nitride (BN) nanocomposites

    SciTech Connect

    Sulaiman, Hanisah Syed; Hua, Chia Chin; Zakaria, Sarani

    2015-09-25

    In this study, nanocomposite using cellulose nanofibrils filled with different percentage of boron nitride (CNF-BN) were prepared. The objective of this research is to study the effect of different percentage of BN to the thermal conductivity of the nanocomposite produced. The CNF-BN nanocomposite were characterization by FT-IR, SEM and thermal conductivity. The FT-IR analysis of the CNF-BN nanocomposite shows all the characteristic peaks of cellulose and BN present in all samples. The dispersion of BN in CNF were seen through SEM analysis. The effect of different loading percentage of BN to the thermal conductivity of the nanocomposite were also investigated.

  9. Corrosion resistance of monolayer hexagonal boron nitride on copper.

    PubMed

    Mahvash, F; Eissa, S; Bordjiba, T; Tavares, A C; Szkopek, T; Siaj, M

    2017-02-13

    Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating.

  10. Corrosion resistance of monolayer hexagonal boron nitride on copper

    PubMed Central

    Mahvash, F.; Eissa, S.; Bordjiba, T.; Tavares, A. C.; Szkopek, T.; Siaj, M.

    2017-01-01

    Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating. PMID:28191822

  11. Tunable magnetic states in hexagonal boron nitride sheets

    NASA Astrophysics Data System (ADS)

    Machado-Charry, Eduardo; Boulanger, Paul; Genovese, Luigi; Mousseau, Normand; Pochet, Pascal

    2012-09-01

    Magnetism in two dimensional atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the N-N distance in the edge and the magnetic moments of the defects. By stress-induced geometry modifications, we change the ground state magnetic moment of the defects. This control is made possible by the triangular shape of the defects as well as the strong spin localisation in the magnetic state.

  12. Boron nitride nanosheets as oxygen-atom corrosion protective coatings

    NASA Astrophysics Data System (ADS)

    Yi, Min; Shen, Zhigang; Zhao, Xiaohu; Liang, Shuaishuai; Liu, Lei

    2014-04-01

    The research of two-dimensional nanomaterials for anticorrosion applications is just recently burgeoning. Herein, we demonstrate the boron nitride nanosheets (BNNSs) coatings for protecting polymer from oxygen-atom corrosion. High-quality BNNSs, which are produced by an effective fluid dynamics method with multiple exfoliation mechanisms, can be assembled into coatings with controlled thickness by vacuum filtration. After exposed in atom oxygen, the naked polymer is severely corroded with remarkable mass loss, while the BNNSs-coated polymer remains intact. Barrier and bonding effects of the BNNSs are responsible for the coating's protective performance. These preliminary yet reproducible results pave a way for resisting oxygen-atom corrosion.

  13. Aqueous compatible boron nitride nanosheets for high-performance hydrogels

    NASA Astrophysics Data System (ADS)

    Hu, Xiaozhen; Liu, Jiahui; He, Qiuju; Meng, Yuan; Cao, Liu; Sun, Ya-Ping; Chen, Jijie; Lu, Fushen

    2016-02-01

    Hexagonal boron nitride nanosheets (BNNSs) possess ultimate thermal and chemical stabilities and mechanical strengths. However, the unmodified BNNSs are hydrophobic and insoluble in water, which hinders their use in many technological areas requiring aqueous compatibility. In this work, h-BN was treated with molten citric acid to produce aqueous dispersible boron nitride sheets (ca-BNNSs). The resultant ca-BNNSs were used to fabricate ca-BNNS/polyacrylamide (i.e., BNNS2.5/PAAm) nanocomposite hydrogels, targeting high water retentivity and flexibility. The BNNS2.5/PAAm hydrogel (initially swollen in water) largely remained swollen (water content ~94 wt%) even after one-year storage under ambient conditions. Importantly, the swollen BNNS2.5/PAAm hydrogel (water content ~95 wt%) was highly flexible. Its elongation and compressive strength exceeded 10 000% and 8 MPa at 97% strain, respectively. Moreover, the aforementioned hydrogel recovered upon the removal of compression force, without obvious damage. The substantially improved water retentivity and flexibility revealed that BNNSs can serve as a promising new platform in the development of high-performance hydrogels.Hexagonal boron nitride nanosheets (BNNSs) possess ultimate thermal and chemical stabilities and mechanical strengths. However, the unmodified BNNSs are hydrophobic and insoluble in water, which hinders their use in many technological areas requiring aqueous compatibility. In this work, h-BN was treated with molten citric acid to produce aqueous dispersible boron nitride sheets (ca-BNNSs). The resultant ca-BNNSs were used to fabricate ca-BNNS/polyacrylamide (i.e., BNNS2.5/PAAm) nanocomposite hydrogels, targeting high water retentivity and flexibility. The BNNS2.5/PAAm hydrogel (initially swollen in water) largely remained swollen (water content ~94 wt%) even after one-year storage under ambient conditions. Importantly, the swollen BNNS2.5/PAAm hydrogel (water content ~95 wt%) was highly flexible. Its

  14. Electronic states in hybrid boron nitride and graphene structures

    NASA Astrophysics Data System (ADS)

    Zhao, M.; Huang, Y. H.; Ma, F.; Hu, T. W.; Xu, K. W.; Chu, Paul K.

    2013-08-01

    The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry.

  15. Local environment of silicon in cubic boron nitride

    SciTech Connect

    Murata, Hidenobu Taniguchi, Takashi; Hishita, Shunichi; Yamamoto, Tomoyuki; Oba, Fumiyasu; Tanaka, Isao

    2013-12-21

    Si-doped cubic boron nitride (c-BN) is synthesized at high pressure and high temperature, and the local environment of Si is investigated using X-ray absorption near edge structure (XANES) and first-principles calculations. Si-K XANES indicates that Si in c-BN is surrounded by four nitrogen atoms. According to first-principles calculations, the model for substitutional Si at the B site well reproduces experimental Si-K XANES, and it is energetically more favorable than substitutional Si at the N site. Both the present experimental and theoretical results indicate that Si in c-BN prefers the B site to the N site.

  16. Field emission characteristics from graphene on hexagonal boron nitride

    SciTech Connect

    Yamada, Takatoshi; Masuzawa, Tomoaki; Ebisudani, Taishi; Okano, Ken; Taniguchi, Takashi

    2014-06-02

    An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum nanoelectronics devices. The field emission property was discussed along with the electronic structure of graphene investigated by Fowler-Nordheim plot and ultraviolet photoelectron spectroscopy. The result suggested that transferring graphene on h-BN modified its work function, which changed field emission mechanism. Our report opens up a possibility of graphene-based vacuum nanoelectronics devices with tuned work function.

  17. Enhanced low voltage cell electropermeabilization by boron nitride nanotubes.

    PubMed

    Raffa, V; Ciofani, G; Cuschieri, A

    2009-02-18

    Boron nitride nanotubes (BNNTs) are a structural analogue of carbon nanotubes (CNTs), with alternating B and N atoms which entirely substitute for C atoms in a graphitic-like sheet with almost no change in atomic spacing. BNNTs have generated considerable interest within the scientific community by virtue of their unique properties. Very recently, biomedical applications of BNNTs have also been proposed. In the present in vitro study, we demonstrate that BNNTs can be used as nanotools to enable cell electropermeabilization with very low electric fields (40-60 V cm(-1)). An explanation of this behaviour based on the dielectric response of BNNTs to static electric fields is proposed.

  18. Over 1.0 mm-long boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Chen, Hua; Chen, Ying; Liu, Yun; Fu, Lan; Huang, Cheng; Llewellyn, David

    2008-09-01

    Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 10 4 Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.

  19. Synthesis of boron nitride nanotubes and their applications.

    PubMed

    Kalay, Saban; Yilmaz, Zehra; Sen, Ozlem; Emanet, Melis; Kazanc, Emine; Çulha, Mustafa

    2015-01-01

    Boron nitride nanotubes (BNNTs) have been increasingly investigated for use in a wide range of applications due to their unique physicochemical properties including high hydrophobicity, heat and electrical insulation, resistance to oxidation, and hydrogen storage capacity. They are also valued for their possible medical and biomedical applications including drug delivery, use in biomaterials, and neutron capture therapy. In this review, BNNT synthesis methods and the surface modification strategies are first discussed, and then their toxicity and application studies are summarized. Finally, a perspective for the future use of these novel materials is discussed.

  20. Isolation of individual boron nitride nanotubes via peptide wrapping.

    PubMed

    Gao, Zhenghong; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Serizawa, Takeshi

    2010-04-14

    The isolation of individual boron nitride nanotubes (BNNTs) in aqueous phases has been achieved for the first time from raw materials based on the combination of peptide wrapping with a sonication procedure. Atomic force microscopic observations revealed the representative height and length of individual BNNTs. Fluorescence and infrared absorption spectra suggested the strong pi-pi interactions between BNNTs and the peptide. The absorption maxima of BNNTs were significantly blue-shifted from 200 nm for the original BNNTs to 193 nm. The modulation of the BNNT band gap with peptide wrapping promises potential applications of the peptide/BNNT complexes to various nanotechnologies.

  1. Effective Growth of Boron Nitride Nanotubes by Thermal-CVD

    NASA Astrophysics Data System (ADS)

    Lee, Chee Huei; Xie, Ming; Meyers, Derek; Wang, Jiesheng; Khin Yap, Yoke

    2009-03-01

    The synthesis of boron nitride nanotubes (BNNTs) are challenging as compared to the growth of carbon nanotubes (CNTs). Most of reported techniques required unique setup and temperatures >1300 ^oC. Here we show that clean and long multiwalled BNNTs can be grown by simple catalytic thermal CVD. This was obtained by a growth vapor trapping approach inspired by the whisker nucleation theory. Based on our new findings, we have achieved patterned growth of BNNTs at desired locations. High resolution TEM shows that these BNNTs are highly crystallized. Besides, the tangential vibrational mode predicted by theory was detected in our BNNTs. This vibration mode could be the fingerprint for BNNTs with high crystallinity.

  2. Synthesis of boron nitride nanotubes and their applications

    PubMed Central

    Kalay, Saban; Yilmaz, Zehra; Sen, Ozlem; Emanet, Melis; Kazanc, Emine

    2015-01-01

    Summary Boron nitride nanotubes (BNNTs) have been increasingly investigated for use in a wide range of applications due to their unique physicochemical properties including high hydrophobicity, heat and electrical insulation, resistance to oxidation, and hydrogen storage capacity. They are also valued for their possible medical and biomedical applications including drug delivery, use in biomaterials, and neutron capture therapy. In this review, BNNT synthesis methods and the surface modification strategies are first discussed, and then their toxicity and application studies are summarized. Finally, a perspective for the future use of these novel materials is discussed. PMID:25671154

  3. Isotopic Enrichment of Boron in the Sputtering of Boron Nitride with Xenon Ions

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1998-01-01

    An experimental study is described to measure the isotopic enrichment of boron. Xenon ions from 100 eV to 1.5 keV were used to sputter a boron nitride target. An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 microA/sq cm. Xenon ions impinged on the target surface at 50 deg angle to the surface normal. Since boron nitride is an insulator, a flood electron gun was used in our experiments to neutralize the positive charge buildup on the target surface. The sputtered secondary ions of boron were detected by a quadrupole mass spectrometer. The spectrometer entrance aperture was located perpendicular to the ion beam direction and 10 mm away from the target surface. The secondary ion flux was observed to be enriched in the heavy isotopes at lower ion energies. The proportion of heavy isotopes in the sputtered secondary ion flux was found to decrease with increasing primary ion energy from 100 to 350 eV. Beyond 350 eV, light isotopes were sputtered preferentially. The light isotope enrichment factor was observed to reach an asymptotic value of 1.27 at 1.5 keV. This trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

  4. Hot filament CVD of boron nitride films

    DOEpatents

    Rye, Robert R.

    1992-01-01

    Using a hot filament (.apprxeq.1400.degree. C.) to activate borazine (B.sub.3 N.sub.3 H.sub.6) molecules for subsequent reaction with a direct line-of-sight substrate, transparent boron ntiride films as thick as 25,000 angstroms are grown for a substrate temperature as low as 100.degree. C. The minimum temperature is determined by radiative heating from the adjacent hot filament. The low temperature BN films show no indication of crystallinity with X-ray diffraction (XRD). X-ray photoelectron spectra (XPS) show the films to have a B:N ratio of 0.97:1 with no other XPS detectable impurities above the 0.5% level. Both Raman and infrared (IR) spectroscopy are characteristic of h-BN with small amounts of hydrogen detected as N-H and B-H bands in the IR spectrum. An important feature of this method is the separation and localization of the thermal activation step at the hot filament from the surface reaction and film growth steps at the substrate surface. This allows both higher temperature thermal activation and lower temperature film growth.

  5. Boron Nitride Nanotubes Synthesized by Pressurized Reactive Milling Process

    NASA Technical Reports Server (NTRS)

    Hurst, Janet B.

    2004-01-01

    Nanotubes, because of their very high strength, are attractive as reinforcement materials for ceramic matrix composites (CMCs). Recently there has been considerable interest in developing and applying carbon nanotubes for both electronic and structural applications. Although carbon nanotubes can be used to reinforce composites, they oxidize at high temperatures and, therefore, may not be suitable for ceramic composites. Boron nitride, because it has a higher oxidation resistance than carbon, could be a potential reinforcement material for ceramic composites. Although boron nitride nanotubes (BNnT) are known to be structurally similar to carbon nanotubes, they have not undergone the same extensive scrutiny that carbon nanotubes have experienced in recent years. This has been due to the difficulty in synthesizing this material rather than lack of interest in the material. We expect that BNnTs will maintain the high strength of carbon nanotubes while offering superior performance for the high-temperature and/or corrosive applications of interest to NASA. At the NASA Glenn Research of preparing BN-nTs were investigated and compared. These include the arc jet process, the reactive milling process, and chemical vapor deposition. The most successful was a pressurized reactive milling process that synthesizes BN-nTs of reasonable quantities.

  6. Facile preparation and multifunctional applications of boron nitride quantum dots

    NASA Astrophysics Data System (ADS)

    Lei, Zhouyue; Xu, Shengjie; Wan, Jiaxun; Wu, Peiyi

    2015-11-01

    Boron nitride quantum dots are obtained by a facile sonication-solvothermal technique. They are proven to be promising fluorescent bioimaging probes for bioimaging with remarkably low cytotoxicity and easily integrated into high-performance proton exchange membranes. This work will probably trigger research interest in BN and its new applications in a variety of fields.Boron nitride quantum dots are obtained by a facile sonication-solvothermal technique. They are proven to be promising fluorescent bioimaging probes for bioimaging with remarkably low cytotoxicity and easily integrated into high-performance proton exchange membranes. This work will probably trigger research interest in BN and its new applications in a variety of fields. Electronic supplementary information (ESI) available: AFM images of BN nanosheets, TEM, HRTEM and AFM images of BN QDs prepared in DMSO, digital photographs of DMF, DMSO, DMF with the addition of BN raw materials and DMSO with the addition of BN raw materials, UV-vis and FTIR spectra of the BN QDs, cell viability of the BN QDs, a summary of cell viabilities of different fluorescent QDs, digital photographs and CLSM images of the as-prepared PEMs, TGA and DSC curves of the PEMs, and AFM images of the PEMs. See DOI: 10.1039/c5nr05960g

  7. Aqueous compatible boron nitride nanosheets for high-performance hydrogels.

    PubMed

    Hu, Xiaozhen; Liu, Jiahui; He, Qiuju; Meng, Yuan; Cao, Liu; Sun, Ya-Ping; Chen, Jijie; Lu, Fushen

    2016-02-21

    Hexagonal boron nitride nanosheets (BNNSs) possess ultimate thermal and chemical stabilities and mechanical strengths. However, the unmodified BNNSs are hydrophobic and insoluble in water, which hinders their use in many technological areas requiring aqueous compatibility. In this work, h-BN was treated with molten citric acid to produce aqueous dispersible boron nitride sheets (ca-BNNSs). The resultant ca-BNNSs were used to fabricate ca-BNNS/polyacrylamide (i.e., BNNS2.5/PAAm) nanocomposite hydrogels, targeting high water retentivity and flexibility. The BNNS2.5/PAAm hydrogel (initially swollen in water) largely remained swollen (water content ∼94 wt%) even after one-year storage under ambient conditions. Importantly, the swollen BNNS2.5/PAAm hydrogel (water content ∼95 wt%) was highly flexible. Its elongation and compressive strength exceeded 10,000% and 8 MPa at 97% strain, respectively. Moreover, the aforementioned hydrogel recovered upon the removal of compression force, without obvious damage. The substantially improved water retentivity and flexibility revealed that BNNSs can serve as a promising new platform in the development of high-performance hydrogels.

  8. Chemical Sharpening, Shortening, and Unzipping of Boron Nitride Nanotubes

    NASA Technical Reports Server (NTRS)

    Liao, Yunlong; Chen, Zhongfang; Connell, John W.; Fay, Catharine C.; Park, Cheol; Kim, Jae-Woo; Lin, Yi

    2014-01-01

    Boron nitride nanotubes (BNNTs), the one-dimensional member of the boron nitride nanostructure family, are generally accepted to be highly inert to oxidative treatments and can only be covalently modifi ed by highly reactive species. Conversely, it is discovered that the BNNTs can be chemically dispersed and their morphology modifi ed by a relatively mild method: simply sonicating the nanotubes in aqueous ammonia solution. The dispersed nanotubes are significantly corroded, with end-caps removed, tips sharpened, and walls thinned. The sonication treatment in aqueous ammonia solution also removes amorphous BN impurities and shortened BNNTs, resembling various oxidative treatments of carbon nanotubes. Importantly, the majority of BNNTs are at least partially longitudinally cut, or "unzipped". Entangled and freestanding BN nanoribbons (BNNRs), resulting from the unzipping, are found to be approximately 5-20 nm in width and up to a few hundred nanometers in length. This is the fi rst chemical method to obtain BNNRs from BNNT unzipping. This method is not derived from known carbon nanotube unzipping strategies, but is unique to BNNTs because the use of aqueous ammonia solutions specifi cally targets the B-N bond network. This study may pave the way for convenient processing of BNNTs, previously thought to be highly inert, toward controlling their dispersion, purity, lengths, and electronic properties.

  9. Band gap effects of hexagonal boron nitride using oxygen plasma

    SciTech Connect

    Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

    2014-04-21

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

  10. Structural modification of boron nitride nanotubes by plasma irradiation

    NASA Astrophysics Data System (ADS)

    Ikuno, Takashi; Begtrup, Gavi; Aloni, Shaul; Kis, Andras; Okawa, David; Zettl, Alex

    2006-03-01

    Boron nitride (BN) and boron-carbon-nitride (B-C-N) nanotubes (NTs) are candidates for potential nanosized electronic and optical devices due to extraordinary physical and chemical properties. In terms of electronic property, in contrast to the insulating BNNTs with about 5.5 eV band gap, ternary B-C-N NTs has semiconducting property, the band gap of which is primarily determined by their chemical compositions. Although one of the methods to make B-C-N NTs is C doping to BNNTs, it is difficult to modify the structure and composition of BNNTs due to its chemical inertness and strong sp2 bond. In this study, we performed to modify the structure and composition of BNNTs by plasma irradiation for synthesizing B-C-N NTs. Hydrocarbon plasma was utilized for structural modification of BNNTs. The structural properties and the composition were characterized by high-resolution transmission electron microscopy and electron energy loss spectroscopy. After the plasma irradiation, outer several BN layers were modified to wavy structure from straight shape, and the defects were observed in almost BN layers, indicating destruction of crystal structure by collision of energetic particles in plasma and BNNTs. There are 5 -- 30 at% of C in BNNTs and C atoms were inhomogeneously distributed in B-C-N NTs. The electron transport property of the modified B-C-N NTs will be reported in our presentation.

  11. Purification of boron nitride nanotubes via polymer wrapping

    SciTech Connect

    Choi, Jin-Hyuk; Kim, Jaewoo; Seo, Duckbong; Seo, Young-Soo

    2013-03-15

    Highlights: ► Surface modification of boron nitride nanotubes using polymeric materials. ► Surface-modified BNNT was purified with a simple dilution-centrifugation step. ► Surface-modified BNNT can be directly used for polymer composite fabrication ► Degree of purification was analyzed by Raman spectroscopy. - Abstract: Boron nitride nanotubes (BNNT) synthesized by a ball milling-annealing were surface-modified using three different types of polymeric materials. Those materials were chosen depending on future applications especially in polymer nanocomposite fabrications. We found that the surface-modified BNNT can be purified with a simple dilution-centrifugation step, which would be suitable for large-scale purification. Degree of purification was monitored by means of the center peak position and FWHM of E{sub 2g} mode of BNNT in Raman spectra. As the purification of BNNT develops, the peak position was up-shifted while FWHM of the peak was narrowed.

  12. Silver Nanoparticle-Deposited Boron Nitride Nanosheets as Fillers for Polymeric Composites with High Thermal Conductivity

    PubMed Central

    Wang, Fangfang; Zeng, Xiaoliang; Yao, Yimin; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

    2016-01-01

    Polymer composites with high thermal conductivity have recently attracted much attention, along with the rapid development of the electronic devices toward higher speed and performance. However, a common method to enhance polymer thermal conductivity through an addition of high thermally conductive fillers usually cannot provide an expected value, especially for composites requiring electrical insulation. Here, we show that polymeric composites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively enhance the thermal conductivity of polymer, thanks to the bridging connections of silver nanoparticles among boron nitride nanosheets. The thermal conductivity of the composite is significantly increased from 1.63 W/m-K for the composite filled with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %. In addition, the electrically insulating properties of the composite are well preserved. Fitting the measured thermal conductivity of epoxy composite with one physical model indicates that the composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal contact resistance among boron nitride nanosheets’ interfaces. The finding sheds new light on enhancement of thermal conductivity of the polymeric composites which concurrently require the electrical insulation. PMID:26783258

  13. Silver Nanoparticle-Deposited Boron Nitride Nanosheets as Fillers for Polymeric Composites with High Thermal Conductivity.

    PubMed

    Wang, Fangfang; Zeng, Xiaoliang; Yao, Yimin; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

    2016-01-19

    Polymer composites with high thermal conductivity have recently attracted much attention, along with the rapid development of the electronic devices toward higher speed and performance. However, a common method to enhance polymer thermal conductivity through an addition of high thermally conductive fillers usually cannot provide an expected value, especially for composites requiring electrical insulation. Here, we show that polymeric composites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively enhance the thermal conductivity of polymer, thanks to the bridging connections of silver nanoparticles among boron nitride nanosheets. The thermal conductivity of the composite is significantly increased from 1.63 W/m-K for the composite filled with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %. In addition, the electrically insulating properties of the composite are well preserved. Fitting the measured thermal conductivity of epoxy composite with one physical model indicates that the composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal contact resistance among boron nitride nanosheets' interfaces. The finding sheds new light on enhancement of thermal conductivity of the polymeric composites which concurrently require the electrical insulation.

  14. Silver Nanoparticle-Deposited Boron Nitride Nanosheets as Fillers for Polymeric Composites with High Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Wang, Fangfang; Zeng, Xiaoliang; Yao, Yimin; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

    2016-01-01

    Polymer composites with high thermal conductivity have recently attracted much attention, along with the rapid development of the electronic devices toward higher speed and performance. However, a common method to enhance polymer thermal conductivity through an addition of high thermally conductive fillers usually cannot provide an expected value, especially for composites requiring electrical insulation. Here, we show that polymeric composites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively enhance the thermal conductivity of polymer, thanks to the bridging connections of silver nanoparticles among boron nitride nanosheets. The thermal conductivity of the composite is significantly increased from 1.63 W/m-K for the composite filled with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %. In addition, the electrically insulating properties of the composite are well preserved. Fitting the measured thermal conductivity of epoxy composite with one physical model indicates that the composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal contact resistance among boron nitride nanosheets’ interfaces. The finding sheds new light on enhancement of thermal conductivity of the polymeric composites which concurrently require the electrical insulation.

  15. Structural and elastic properties characterization of Be and Mg doped boron nitride nanotubes using DFT calculations

    NASA Astrophysics Data System (ADS)

    Ansari, R.; Malakpour, S.

    2015-06-01

    Through doping boron nitride nanotubes, their band gaps could be controlled which results in extending the range of their applications particularly in nanosensors. In this article, the structural and elastic properties of Be and Mg doped boron nitride nanotubes with various chiralities are studied based on ab initio density functional calculations. In order to perform the density functional theory (DFT) calculations, the exchange correlation of Perdew-Burke-Ernzerhof within the generalized gradient approximation (GGA) framework is employed. It is observed that doping Be and Mg atoms increases the equilibrium strain energy of boron nitride nanotubes. Furthermore, it is found that among all of the considered nanotubes, an increase in the value of Young's modulus of (4, 4) armchair boron nitride nanotube through doping Be atom instead of boron atom is so considerable.

  16. Consolidation of cubic and hexagonal boron nitride composites

    DOE PAGES

    Du Frane, W. L.; Cervantes, O.; Ellsworth, G. F.; ...

    2015-12-08

    When we Consolidate cubic boron nitride (cBN) it typically requires either a matrix of metal bearing materials that are undesirable for certain applications, or very high pressures within the cBN phase stability field that are prohibitive to manufacturing size and cost. We present new methodology for consolidating high stiffness cBN composites within a hexagonal boron nitride (hBN) matrix (15–25 vol%) with the aid of a binder phase (0–6 vol%) at moderate pressures (0.5–1.0 GPa) and temperatures (900–1300 °C). The composites are demonstrated to be highly tailorable with a range of compositions and resulting physical/mechanical properties. Ultrasonic measurements indicate that inmore » some cases these composites have elastic mechanical properties that exceed those of the highest strength steel alloys. Moreover, two methods were identified to prevent phase transformation of the metastable cBN phase into hBN during consolidation: 1. removal of hydrocarbons, and 2. increased cBN particle size. Lithium tetraborate worked better as a binder than boron oxide, aiding consolidation without enhancing cBN to hBN phase transformation kinetics. These powder mixtures consolidated within error of their full theoretical mass densities at 1 GPa, and had only slightly lower densities at 0.5 GPa. This shows potential for consolidation of these composites into larger parts, in a variety of shapes, at even lower pressures using more conventional manufacturing methods, such as hot-pressing.« less

  17. Double-walled boron nitride nanotubes grown by floating catalyst chemical vapor deposition.

    PubMed

    Kim, Myung Jong; Chatterjee, Shahana; Kim, Seung Min; Stach, Eric A; Bradley, Mark G; Pender, Mark J; Sneddon, Larry G; Maruyama, Benji

    2008-10-01

    One-dimensional nanostructures exhibit quantum confinement which leads to unique electronic properties, making them attractive as the active elements for nanoscale electronic devices. Boron nitride nanotubes are of particular interest since, unlike carbon nanotubes, all chiralities are semiconducting. Here, we report a synthesis based on the use of low pressures of the molecular precursor borazine in conjunction with a floating nickelocene catalyst that resulted in the formation of double-walled boron nitride nanotubes. As has been shown for carbon nanotube production, the floating catalyst chemical vapor deposition method has the potential for creating high quality boron nitride nanostructures with high production volumes.

  18. 2D to 3D transition of polymeric carbon nitride nanosheets

    SciTech Connect

    Chamorro-Posada, Pedro; Vázquez-Cabo, José; Martín-Ramos, Pablo; Martín-Gil, Jesús; Navas-Gracia, Luis M.; Dante, Roberto C.

    2014-11-15

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

  19. Nitrogen implantation effects on the chemical bonding and hardness of boron and boron nitride coatings

    SciTech Connect

    Anders, S; Felter, T; Hayes, J; Jankowski, A F; Patterson, R; Poker, D; Stamler, T

    1999-02-08

    Boron nitride (BN) coatings are deposited by the reactive sputtering of fully dense, boron (B) targets utilizing an argon-nitrogen (Ar-N{sub 2}) reactive gas mixture. Near-edge x-ray absorption fine structure analysis reveals features of chemical bonding in the B 1s photoabsorption spectrum. Hardness is measured at the film surface using nanoindentation. The BN coatings prepared at low, sputter gas pressure with substrate heating are found to have bonding characteristic of a defected hexagonal phase. The coatings are subjected to post-deposition nitrogen (N{sup +} and N{sub 2}{sup +}) implantation at different energies and current densities. The changes in film hardness attributed to the implantation can be correlated to changes observed in the B 1s NEXAFS spectra.

  20. Root-growth mechanism for single-walled boron nitride nanotubes in laser vaporization technique.

    PubMed

    Arenal, Raul; Stephan, Odile; Cochon, Jean-Lou; Loiseau, Annick

    2007-12-26

    We present a detailed study of the growth mechanism of single-walled boron nitride nanotubes synthesized by laser vaporization, which is the unique route known to the synthesis of this kind of tube in high quantities. We have performed a nanometric chemical and structural characterization by transmission electron microscopy (high-resolution mode (HRTEM) and electron energy loss spectroscopy) of the synthesis products. Different boron-based compounds and other impurities were identified in the raw synthesis products. The results obtained by the TEM analysis and from the synthesis parameters (temperature, boron, and nitrogen sources) combined with phase diagram analysis to provide identification of the fundamental factors determining the nanotube growth mechanism. Our experiments strongly support a root-growth model that involves the presence of a droplet of boron. This phenomenological model considers the solubility, solidification, and segregation phenomena of the elements present in this boron droplet. In this model, we distinguish three different steps as a function of the temperature: (1) formation of the liquid boron droplet from the decomposition of different boron compounds existing in the hexagonal boron nitride target, (2) reaction of these boron droplets with nitrogen gas present in the vaporization chamber and recombination of these elements to form boron nitride, and (3) incorporation of the nitrogen atoms at the root of the boron particle at active reacting sites that achieves the growth of the tube.

  1. Method of enhancing the wettability of boron nitride for use as an electrochemical cell separator

    DOEpatents

    McCoy, L.R.

    1981-01-23

    A felt or other fabric of boron nitride suitable for use as an interelectrode separator within an electrochemical cell is wetted with a solution containing a thermally decomposable organic salt of an alkaline earth metal. An aqueous solution of magnesium acetate is the preferred solution for this purpose. After wetting the boron nitride, the solution is dried by heating at a sufficiently low temperature to prevent rapid boiling and the creation of voids within the separator. The dried material is then calcined at an elevated temperature in excess of 400/sup 0/C to provide a coating of an oxide of magnesium on the surface of the boron nitride fibers. A fabric or felt of boron nitride treated in this manner is easily wetted by molten electrolytic salts, such as the alkali metal halides or alkaline earth metal halides, that are used in high temperature, secondary electrochemical cells.

  2. Boron nitride nanowires synthesis via a simple chemical vapor deposition at 1200 °C

    SciTech Connect

    Ahmad, Pervaiz; Khandaker, Mayeen Uddin; Amin, Yusoff Mohd; Khan, Ziaul Raza

    2015-04-24

    A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 °C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of ∼20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronic devices with uniform electronic properties.

  3. Microplasma Processed Ultrathin Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Thermal Transport Performance.

    PubMed

    Zhang, Ri-Chao; Sun, Dan; Lu, Ai; Askari, Sadegh; Macias-Montero, Manuel; Joseph, Paul; Dixon, Dorian; Ostrikov, Kostya; Maguire, Paul; Mariotti, Davide

    2016-06-01

    This Research Article reports on the enhancement of the thermal transport properties of nanocomposite materials containing hexagonal boron nitride in poly(vinyl alcohol) through room-temperature atmospheric pressure direct-current microplasma processing. Results show that the microplasma treatment leads to exfoliation of the hexagonal boron nitride in isopropyl alcohol, reducing the number of stacks from >30 to a few or single layers. The thermal diffusivity of the resulting nanocomposites reaches 8.5 mm(2) s(-1), 50 times greater than blank poly(vinyl alcohol) and twice that of nanocomposites containing nonplasma treated boron nitride nanosheets. From TEM analysis, we observe much less aggregation of the nanosheets after plasma processing along with indications of an amorphous carbon interfacial layer, which may contribute to stable dispersion of boron nitride nanosheets in the resulting plasma treated colloids.

  4. Method of enhancing the wettability of boron nitride for use as an electrochemical cell separator

    DOEpatents

    McCoy, Lowell R.

    1982-01-01

    A felt or other fabric of boron nitride suitable for use as an interelecte separator within an electrochemical cell is wetted with a solution containing a thermally decomposable organic salt of an alkaline earth metal. An aqueous solution of magnesium acetate is the preferred solution for this purpose. After wetting the boron nitride, the solution is dried by heating at a sufficiently low temperature to prevent rapid boiling and the creation of voids within the separator. The dried material is then calcined at an elevated temperature in excess of 400.degree. C. to provide a coating of an oxide of magnesium on the surface of the boron nitride fibers. A fabric or felt of boron nitride treated in this manner is easily wetted by molten electrolytic salts, such as the alkali metal halides or alkaline earth metal halides, that are used in high temperature, secondary electrochemical cells.

  5. Thermal conductance of graphene/hexagonal boron nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Simon; McGaughey, Alan J. H.

    2017-03-01

    The lattice-based scattering boundary method is applied to compute the phonon mode-resolved transmission coefficients and thermal conductances of in-plane heterostructures built from graphene and hexagonal boron nitride (hBN). The thermal conductance of all structures is dominated by acoustic phonon modes near the Brillouin zone center that have high group velocity, population, and transmission coefficient. Out-of-plane modes make their most significant contributions at low frequencies, whereas in-plane modes contribute across the frequency spectrum. Finite-length superlattice junctions between graphene and hBN leads have a lower thermal conductance than comparable junctions between two graphene leads due to lack of transmission in the hBN phonon bandgap. The thermal conductances of bilayer systems differ by less than 10% from their single-layer counterparts on a per area basis, in contrast to the strong thermal conductivity reduction when moving from single- to multi-layer graphene.

  6. Etched graphene quantum dots on hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Engels, S.; Epping, A.; Volk, C.; Korte, S.; Voigtländer, B.; Watanabe, K.; Taniguchi, T.; Trellenkamp, S.; Stampfer, C.

    2013-08-01

    We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

  7. Density of states of helically symmetric boron carbon nitride nanotubes.

    PubMed

    Carvalho, A C M; Bezerra, C G; Lawlor, J A; Ferreira, M S

    2014-01-08

    Motivated by the existence of helical wrapping patterns in composite nanotube systems, in this work we study the effects of the helical incorporation of carbon atoms in boron nitride nanotubes. We consider the substitutional carbon atoms distributed in stripes forming helical patterns along the nanotube axis. The density of states and energy band gap were calculated adopting Green function formalism by using the Rubio-Sancho technique in order to solve the matrix Dyson equation. We report the effects of the helical atomic distribution of carbon atoms on the behaviour of the density of states and the energy band gap. In particular, we show that the electronic energy band gap displays a non-monotonical dependence on the helical pattern, oscillating as a function of the helical angle θ.

  8. Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride.

    PubMed

    Ba, Kun; Jiang, Wei; Cheng, Jingxin; Bao, Jingxian; Xuan, Ningning; Sun, Yangye; Liu, Bing; Xie, Aozhen; Wu, Shiwei; Sun, Zhengzong

    2017-04-03

    Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries (GBs) engineering in the basal plane. The other way is to invite foreign atoms, such as carbon, to forge bizarre hybrid structures like hetero-junctions or semiconducting h-BNC materials. Here we successfully developed a general chemical method to synthesize these different h-BN derivatives, showcasing how the chemical structure can be manipulated with or without a graphene precursor, and the bandgap be tuned to ~2 eV, only one third of the pristine one's.

  9. Superior thermal conductivity in suspended bilayer hexagonal boron nitride

    PubMed Central

    Wang, Chengru; Guo, Jie; Dong, Lan; Aiyiti, Adili; Xu, Xiangfan; Li, Baowen

    2016-01-01

    We reported the basal-plane thermal conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended prepatterned microstructures. The h-BN sample suitable for thermal measurements was fabricated by dry-transfer method, whose sample quality, due to less polymer residues on surfaces, is believed to be superior to that of PMMA-mediated samples. The measured room temperature thermal conductivity is around 484 Wm−1K−1(+141 Wm−1K−1/ −24 Wm−1K−1) which exceeds that in bulk h-BN, providing experimental observation of the thickness-dependent thermal conductivity in suspended few-layer h-BN. PMID:27142571

  10. Vibration and symmetry-breaking of boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Chowdhury, R.; Wang, C. Y.; Adhikari, S.; Scarpa, F.

    2010-09-01

    The unique features of axial, torsional, transverse and radial breathing vibrations are captured for armchair and zigzag singlewalled boron nitride nanotubes (BNNTs) based on molecular mechanics simulations and continuum mechanics theories. Equivalent Young's modulus 1 TPa and shear modulus 0.4 TPa are obtained independent of the chirality of BNNTs. In particular, a distorted optimized structure is observed for the first time for BNNTs with sufficiently large diameter and length. It is found that the deformed structures result in behaviours of BNNTs deviating from those of classical columns/beams. Such symmetry-breaking could also exert significant impacts on the structural instability (buckling) and electronic properties of BNNTs that are sensitive to the structural symmetry.

  11. First-principles modeling hydrogenation of bilayered boron nitride

    NASA Astrophysics Data System (ADS)

    Jing, Wang; Peng, Zhang; Xiang-Mei, Duan

    2016-05-01

    We have investigated the structural and electronic characteristics of hydrogenated boron-nitride bilayer (H-BNBN-H) using first-principles calculations. The results show that hydrogenation can significantly reduce the energy gap of the BN-BN into the visible-light region. Interestingly, the electric field induced by the interface dipoles helps to promote the formation of well-separated electron-hole pairs, as demonstrated by the charge distribution of the VBM and CBM. Moreover, the applied bias voltage on the vertical direction of the bilayer could modulate the band gap, resulting in transition from semiconductor to metal. We conclude that H-BNBN-H could improve the solar energy conversion efficiency, which may provide a new way for tuning the electronic devices to meet different environments and demands. Project supported by the National Natural Science Foundation of China (Grant No. 11574167).

  12. Weak morphology dependent valence band structure of boron nitride

    NASA Astrophysics Data System (ADS)

    Zhi, Chunyi; Ueda, Shigenori; Zeng, Haibo; Wang, Xuebin; Tian, Wei; Wang, Xi; Bando, Yoshio; Golberg, Dmitri

    2013-08-01

    We report a hard X-ray photoelectron spectroscopy (HX-PES) investigation on valence band structure of Boron Nitrides (BN) having different morphologies, including nanosheets, nanotubes, and micro-sized particles. Very weak morphology/valence band structure dependence was observed. For each case, the B-N π-band overlapping with σ-band between 0 to -12.5 eV and the s-band below -15 eV were identified. No obvious morphology-induced band shifts and intensity variations were observed. First-principles calculations based on density functional theory were performed and the results were compared with the experimental data. This theoretical analysis well explains the weak morphology dependent valence band spectra of BN nanomaterials obtained during HX-PES measurements.

  13. Plasma-assisted interface engineering of boron nitride nanostructure films.

    PubMed

    Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

    2014-10-28

    Today many aspects of science and technology are progressing into the nanoscale realm where surfaces and interfaces are intrinsically important in determining properties and performances of materials and devices. One familiar phenomenon in which interfacial interactions play a major role is the wetting of solids. In this work we use a facile one-step plasma method to control the wettability of boron nitride (BN) nanostructure films via covalent chemical functionalization, while their surface morphology remains intact. By tailoring the concentration of grafted hydroxyl groups, superhydrophilic, hydrophilic, and hydrophobic patterns are created on the initially superhydrophobic BN nanosheet and nanotube films. Moreover, by introducing a gradient of the functional groups, directional liquid spreading toward increasing [OH] content is achieved on the films. The resulting insights are meant to illustrate great potentials of this method to tailor wettability of ceramic films, control liquid flow patterns for engineering applications such as microfluidics and biosensing, and improve the interfacial contact and adhesion in nanocomposite materials.

  14. Thickness-dependent bending modulus of hexagonal boron nitride nanosheets.

    PubMed

    Li, Chun; Bando, Yoshio; Zhi, Chunyi; Huang, Yang; Golberg, Dmitri

    2009-09-23

    Bending modulus of exfoliation-made single-crystalline hexagonal boron nitride nanosheets (BNNSs) with thicknesses of 25-300 nm and sizes of 1.2-3.0 microm were measured using three-point bending tests in an atomic force microscope. BNNSs suspended on an SiO(2) trench were clamped by a metal film via microfabrication based on electron beam lithography. Calculated by the plate theory of a doubly clamped plate under a concentrated load, the bending modulus of BNNSs was found to increase with the decrease of sheet thickness and approach the theoretical C(33) value of a hexagonal BN single crystal in thinner sheets (thickness<50 nm). The thickness-dependent bending modulus was suggested to be due to the layer distribution of stacking faults which were also thought to be responsible for the layer-by-layer BNNS exfoliation.

  15. Electronic structure of spontaneously strained graphene on hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    San-Jose, Pablo; Gutiérrez-Rubio, A.; Sturla, Mauricio; Guinea, Francisco

    2014-09-01

    Hexagonal boron nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions develop in graphene due to the moiré adhesion landscape. Simultaneously, a gap opens at the Dirac point. Here, we derive a simple low-energy electronic model for graphene aligned with the substrate, taking into account spontaneous strains at equilibrium and pseudogauge fields. We carry out a detailed characterization of the modified band structure, gap, local and global density of states, and band topology in terms of physical parameters. We show that the overall electronic structure is strongly modified by the spontaneous strains.

  16. Submicron cubic boron nitride as hard as diamond

    SciTech Connect

    Liu, Guoduan; Kou, Zili E-mail: yanxz@hpstar.ac.cn; Lei, Li; Peng, Fang; Wang, Qiming; Wang, Kaixue; Wang, Pei; Li, Liang; Li, Yong; Wang, Yonghua; Yan, Xiaozhi E-mail: yanxz@hpstar.ac.cn; Li, Wentao; Bi, Yan; Leng, Yang; He, Duanwei

    2015-03-23

    Here, we report the sintering of aggregated submicron cubic boron nitride (sm-cBN) at a pressure of 8 GPa. The sintered cBN compacts exhibit hardness values comparable to that of single crystal diamond, fracture toughness about 5-fold that of cBN single crystal, in combination with a high oxidization temperature. Thus, another way has been demonstrated to improve the mechanical properties of cBN besides reducing the grain size to nano scale. In contrast to other ultrahard compacts with similar hardness, the sm-cBN aggregates are better placed for potential industrial application, as their relative low pressure manufacturing perhaps be easier and cheaper.

  17. Thickness-dependent bending modulus of hexagonal boron nitride nanosheets

    NASA Astrophysics Data System (ADS)

    Li, Chun; Bando, Yoshio; Zhi, Chunyi; Huang, Yang; Golberg, Dmitri

    2009-09-01

    Bending modulus of exfoliation-made single-crystalline hexagonal boron nitride nanosheets (BNNSs) with thicknesses of 25-300 nm and sizes of 1.2-3.0 µm were measured using three-point bending tests in an atomic force microscope. BNNSs suspended on an SiO2 trench were clamped by a metal film via microfabrication based on electron beam lithography. Calculated by the plate theory of a doubly clamped plate under a concentrated load, the bending modulus of BNNSs was found to increase with the decrease of sheet thickness and approach the theoretical C33 value of a hexagonal BN single crystal in thinner sheets (thickness<50 nm). The thickness-dependent bending modulus was suggested to be due to the layer distribution of stacking faults which were also thought to be responsible for the layer-by-layer BNNS exfoliation.

  18. Piezoelectricity in planar boron nitride via a geometric phase

    NASA Astrophysics Data System (ADS)

    Droth, Matthias; Burkard, Guido; Pereira, Vitor M.

    2016-08-01

    Due to their low surface mass density, two-dimensional materials with a strong piezoelectric response are interesting for nanoelectromechanical systems with high force sensitivity. Unlike graphene, the two sublattices in a monolayer of hexagonal boron nitride (hBN) are occupied by different elements, which breaks inversion symmetry and allows for piezoelectricity. This has been confirmed with density functional theory calculations of the piezoelectric constant of hBN. Here, we formulate an entirely analytical derivation of the electronic contribution to the piezoelectric response in this system based on the concepts of strain-induced pseudomagnetic vector potential and the modern theory of polarization that relates the polar moment to the Berry curvature. Our findings agree with the symmetry restrictions expected for the hBN lattice and reproduce well the magnitude of the piezoelectric effect previously obtained ab initio.

  19. Structure of Boron Nitride Nanotubes: Tube Closing Vs. Chirality

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Menon, Madhu

    1998-01-01

    The structure of boron nitride nanotubes is investigated using a generalized tight-binding molecular dynamics method. It is shown that dynamic relaxation results in a wavelike or "rippled" surface in which the B atoms rotate inward and the N atoms move outward, reminiscent of the surface relaxation of the III-V semiconductors. More importantly, the three different morphologies of the tube closing with flat, conical and amorphous ends, as observed in experiments, are shown to be directly related to the tube chiralities. The abundance of flat end tubes observed in experiments is, thus, shown to be an indication of the greater stability of "zig-zag" BN tubes over the "arm-chair" tubes under experimental conditions.

  20. Modelling heat conduction in polycrystalline hexagonal boron-nitride films.

    PubMed

    Mortazavi, Bohayra; Pereira, Luiz Felipe C; Jiang, Jin-Wu; Rabczuk, Timon

    2015-08-19

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets.

  1. Modelling heat conduction in polycrystalline hexagonal boron-nitride films

    PubMed Central

    Mortazavi, Bohayra; Pereira, Luiz Felipe C.; Jiang, Jin-Wu; Rabczuk, Timon

    2015-01-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets. PMID:26286820

  2. Ultrahigh interlayer friction in multiwalled boron nitride nanotubes.

    PubMed

    Niguès, A; Siria, A; Vincent, P; Poncharal, P; Bocquet, L

    2014-07-01

    Friction at the nanoscale has revealed a wealth of behaviours that depart strongly from the long-standing macroscopic laws of Amontons-Coulomb. Here, by using a 'Christmas cracker'-type of system in which a multiwalled nanotube is torn apart between a quartz-tuning-fork-based atomic force microscope (TF-AFM) and a nanomanipulator, we compare the mechanical response of multiwalled carbon nanotubes (CNTs) and multiwalled boron nitride nanotubes (BNNTs) during the fracture and telescopic sliding of the layers. We found that the interlayer friction for insulating BNNTs results in ultrahigh viscous-like dissipation that is proportional to the contact area, whereas for the semimetallic CNTs the sliding friction vanishes within experimental uncertainty. We ascribe this difference to the ionic character of the BN, which allows charge localization. The interlayer viscous friction of BNNTs suggests that BNNT membranes could serve as extremely efficient shock-absorbing surfaces.

  3. Hexagonal boron nitride epitaxial layers as neutron detector materials

    NASA Astrophysics Data System (ADS)

    Li, J.; Dahal, R.; Majety, S.; Lin, J. Y.; Jiang, H. X.

    2011-10-01

    Micro-strip metal-semiconductor-metal detectors for thermal neutron sensing were fabricated from hexagonal boron nitride (hBN) epilayers synthesized by metal organic chemical vapor deposition. Experimental measurements indicated that the thermal neutron absorption coefficient and length of natural hBN epilayers are about 0.00361 μm -1 and 277 μm, respectively. A continuous irradiation with a thermal neutron beam generated an appreciable current response in hBN detectors, corresponding to an effective conversion efficiency approaching ˜80% for absorbed neutrons. Our results indicate that hBN semiconductors would enable the development of essentially ideal solid-state thermal neutron detectors in which both neutron capture and carrier collection are accomplished in the same hBN semiconductor. These solid-state detectors have the potential to replace 3He gas detectors, which faces the very serious issue of 3He gas shortage.

  4. Huge excitonic effects in layered hexagonal boron nitride.

    PubMed

    Arnaud, B; Lebègue, S; Rabiller, P; Alouani, M

    2006-01-20

    The all-electron GW approximation energy band gap of bulk hexagonal boron nitride is shown to be of indirect type. The resulting computed in-plane polarized optical spectrum, obtained by solving the Bethe-Salpeter equation for the electron-hole two-particle Green function, is in excellent agreement with experiment and has a strong anisotropy compared to out-of-plane polarized spectrum. A detailed analysis of the excitonic structures within the band gap shows that the low-lying excitons belong to the Frenkel class and are tightly confined within the layers. The calculated exciton binding energy is much larger than that obtained by Watanabe et al. [Nat. Mater. 3, 404 (2004).] based on a Wannier model assuming h-BN to be a direct-band-gap semiconductor.

  5. Mechanical strength of boron nitride nanotube-polymer interfaces

    SciTech Connect

    Chen, Xiaoming; Ke, Changhong E-mail: cke@binghamton.edu; Zhang, Liuyang; Wang, Xianqiao E-mail: cke@binghamton.edu; Park, Cheol; Fay, Catharine C.

    2015-12-21

    We investigate the mechanical strength of boron nitride nanotube (BNNT) polymer interfaces by using in situ electron microscopy nanomechanical single-tube pull-out techniques. The nanomechanical measurements show that the shear strengths of BNNT-epoxy and BNNT-poly(methyl methacrylate) interfaces reach 323 and 219 MPa, respectively. Molecular dynamics simulations reveal that the superior load transfer capacity of BNNT-polymer interfaces is ascribed to both the strong van der Waals interactions and Coulomb interactions on BNNT-polymer interfaces. The findings of the extraordinary mechanical strength of BNNT-polymer interfaces suggest that BNNTs are excellent reinforcing nanofiller materials for light-weight and high-strength polymer nanocomposites.

  6. Structure and energetics of nanotwins in cubic boron nitrides

    NASA Astrophysics Data System (ADS)

    Zheng, Shijian; Zhang, Ruifeng; Huang, Rong; Taniguchi, Takashi; Ma, Xiuliang; Ikuhara, Yuichi; Beyerlein, Irene J.

    2016-08-01

    Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.

  7. Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications.

    PubMed

    Weng, Qunhong; Wang, Xuebin; Wang, Xi; Bando, Yoshio; Golberg, Dmitri

    2016-07-11

    Functionalization is an important way to breed new properties and applications for a material. This review presents an overview of the progresses in functionalized hexagonal boron nitride (h-BN) nanomaterials. It begins with an introduction of h-BN structural features, physical and chemical properties, followed by an emphasis on the developments of BN functionalization strategies and its emerging properties/applications, and ends with the research perspectives. Different functionalization methods, including physical and chemical routes, are comprehensively described toward fabrication of various BN derivatives, hetero- and porous structures, etc. Novel properties of functionalized BN materials, such as high water solubility, excellent biocompatibility, tunable surface affinities, good processibility, adjustable band gaps, etc., have guaranteed wide applications in biomedical, electronic, composite, environmental and "green" energy-related fields.

  8. Dirac cones in transition metal doped boron nitride

    SciTech Connect

    Feng, Min; Cao, Xuewei; Shao, Bin; Zuo, Xu

    2015-05-07

    The transition metal (TM) doped zinc blende boron nitride (c-BN) is studied by using the first principle calculation. TM atoms fill in the interstitials in c-BN and form two-dimensional honeycomb lattice. The generalized gradient approximation and projector augmented wave method are used. The calculated density of states and band structures show that d electrons of TM atoms form impurity bands in the gap of c-BN. When the TM-BN system is in ferromagnetic or non-magnetic state, Dirac cones emerge at the K point in Brillouin zone. When TM is Ti and Co, the Dirac cones are spin polarized and very close to the Fermi level, which makes them promising candidates of Dirac half-metal [H. Ishizuka and Y. Motome, Phys. Rev. Lett. 109, 237207 (2012)]. While TM is Ni and Cu, the system is non-magnetic and Dirac cones located above the Fermi level.

  9. Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride

    PubMed Central

    Ba, Kun; Jiang, Wei; Cheng, Jingxin; Bao, Jingxian; Xuan, Ningning; Sun, Yangye; Liu, Bing; Xie, Aozhen; Wu, Shiwei; Sun, Zhengzong

    2017-01-01

    Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN’s hexagonal structure, which involves defects or grain boundaries (GBs) engineering in the basal plane. The other way is to invite foreign atoms, such as carbon, to forge bizarre hybrid structures like hetero-junctions or semiconducting h-BNC materials. Here we successfully developed a general chemical method to synthesize these different h-BN derivatives, showcasing how the chemical structure can be manipulated with or without a graphene precursor, and the bandgap be tuned to ~2 eV, only one third of the pristine one’s. PMID:28367992

  10. Understanding thermal transport in asymmetric layer hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Zhang, Jingchao; Wang, Xinyu; Hong, Yang; Xiong, Qingang; Jiang, Jin; Yue, Yanan

    2017-01-01

    In this work, thermal transport at the junction of an asymmetric layer hexagonal boron-nitride (h-BN) heterostructure is explored using a non-equilibrium molecular dynamics method. A thermal contact resistance of 3.6 × 10-11 K · m2 W-1 is characterized at a temperature of 300 K with heat flux from the trilayer to monolayer regions. The mismatch in the flexural phonon modes revealed by power spectra analysis provides the driving force for the calculated thermal resistance. A high thermal rectification efficiency of 360% is calculated at the layer junction surpassing that of graphene. Several modulators, i.e. the system temperature, contact pressure and lateral dimensions, are applied to manipulate the thermal conductance and rectification across the interfaces. The predicted thermal rectification sustains positive correlations with temperature and phonon propagation lengths with little change to the coupling strength.

  11. Catalytic growth of boron nitride nanotubes using gas precursors

    NASA Astrophysics Data System (ADS)

    Guo, L.; Singh, R. N.

    2009-01-01

    Hexagonal boron nitride nanotubes (BNNTs) are synthesized at low substrate temperatures on nickel (Ni)- or cobalt (Co)-coated oxidized Si (1 1 1) wafers in a microwave plasma-enhanced chemical vapor deposition (MPCVD) system by decomposition and reaction of gas mixtures consisting of B 2H 6-NH 3-H 2. The growth of one-dimensional (1-D) BN nanostructures is obtained at an optimum combination of catalyst film thickness, substrate temperature, and precursor gas flow rates. The morphology, composition and structural properties of the BNNTs are analyzed by scanning electron microscope (SEM), transmission electron microscope (TEM), energy dispersive X-ray spectroscopy (EDX), selected area diffraction (SAD), and Raman spectroscopy. The patterned growth of BNNTs is also demonstrated.

  12. Evaluation of cytocompatibility and cell response to boron nitride nanotubes.

    PubMed

    Ciofani, Gianni; Danti, Serena

    2012-01-01

    While in the last years applications of carbon nanotubes in the field of biotechnology have been largely proposed, so far biomedical applications of boron nitride nanotubes (BNNTs) are still totally unexplored. BNNTs show very interesting physical properties that might be exploited in the nanomedicine field. To fill up the lack of biocompatibility studies on BNNTs, our group has recently begun a rational investigation on interactions between BNNTs and different cell lines. This chapter reports on preliminary cytocompatibility studies carried out on human neuroblastoma (SH-SY5Y) and on mouse myoblast (C2C12) cell lines as model of neural and skeletal muscle cells, respectively, highlighting the methods that allowed us to evaluate the main parameters of interests for cytocompatibility, such as cell viability, metabolism, apoptosis, and differentiation.

  13. Thermal conductivity of vertically aligned boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Essedik Belkerk, Boubakeur; Achour, Amine; Zhang, Dongyan; Sahli, Salah; Djouadi, M.-Abdou; Khin Yap, Yoke

    2016-07-01

    For the first time, we report the thermal conductivity of vertically aligned boron nitride nanotube (BNNT) films produced by catalytic chemical vapor deposition. High-quality BNNTs were synthesized at 1200 °C on fused silica substrates precoated with Pt thin-film thermometers. The thermal conductivity of the BNNTs was measured at room temperature by using a pulsed photothermal technique. The apparent thermal conductivity of the BNNT coatings increased from 55 to 170 W m-1 K-1 when the thickness increased from 10 to 28 µm, while the thermal conductivity attained a value as high as 2400 W m-1 K-1. These results suggested that BNNTs, which are highly thermally conductive, but electrically insulating, are promising materials with unique properties.

  14. CVD synthesis of boron nitride nanotubes without metal catalysts

    NASA Astrophysics Data System (ADS)

    Ma, R.; Bando, Y.; Sato, T.

    2001-03-01

    An efficient CVD synthetic route for bulk quantities of boron nitride nanotubes (BN-NTs) was developed, where a B-N-O precursor generated from melamine diborate (C 3N 6H 6·2H 3BO 3) was employed as the precursor and no metal catalyst was used. The resultant tubes all show remarkable ordering of the concentric atomic layers and exhibit stoichiometric BN composition. It is commonly found that the nanotubes have bulbous tips showing B-N-O amorphous clusters encapsulated in BN cages. The amorphous clusters might play the catalytic role in the nanotube `tip-growth' process as the metal catalysts do in the metal-catalyzed CVD method.

  15. Shock induced polymorphic transition in quartz, carbon, and boron nitride

    NASA Technical Reports Server (NTRS)

    Tan, Hua; Ahrens, Thomas J.

    1990-01-01

    The model proposed by Ahrens (1988) to explain the mechanism of the polymorphism in silicates is revised, and the revised model is applied to the quartz/stishovite, graphite/diamond, and graphite-boron nitride (g-BN) phase transformations. In this model, a key assumption is that transformation to a high-density amorphous or possibly liquid phase which rapidly crystallized to the high-pressure phase is triggered by the high temperatures in the shear band and upon crossing the metastable extension of a melting curve. Good agreement between the calcualted results and published data is obtained. The present theory predicts the standard entropy for cubic BN to be 0.4-0.5 J/g K.

  16. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    SciTech Connect

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario; Zhang, Meiyun; Long, Shibing; Lian, Xiaojuan; Miao, Feng; Larcher, Luca; Wu, Ernest

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  17. Inexpensive Method for Coating the Interior of Silica Growth Ampoules with Pyrolytic Boron Nitride

    NASA Technical Reports Server (NTRS)

    Wang, Jianbin; Regel, Liya L.; Wilcox, William R.

    2003-01-01

    An inexpensive method was developed for coating the interior of silica ampoules with hexagonal boron nitride. An aqueous solution of boric acid was used to coat the ampoule prior to drying in a vacuum at 200 C. This coating was converted to transparent boron nitride by heating in ammonia at 1000 C. Coated ampoules were used to achieve detached solidification of indium antimonide on earth.

  18. Structural Characterization of Atomically Thin Hexagonal Boron Nitride via Raman Spectroscopy

    DTIC Science & Technology

    2014-03-27

    count the number of h-BN/graphene layers synthesized , it is necessary to develop a methodology to measure h-BN thickness via Raman spectroscopy...common wurtzite structure having been achieved via laboratory fabrication [30]. Given that boron nitride is a purely synthesized material through the...regimented approach to fabrication has allowed the continued refinement to the purity and quality of synthesized boron nitride and has led recently to

  19. Boron nitride nanosheets decorated with silver nanoparticles through mussel-inspired chemistry of dopamine.

    PubMed

    Roy, Arup Kumer; Park, Byoungnam; Lee, Kang Seok; Park, Sung Young; In, Insik

    2014-11-07

    Boron nitride nanosheet (BNNS) decorated with silver nanoparticles (AgNPs) was successfully synthesized via mussel-inspired chemistry of dopamine. Poly(dopamine)-functionalized BNNS (PDA-BNNS) was prepared by adding dopamine into the aqueous dispersion of hydroxylated BNNS (OH-BNNS) at alkaline condition. AgNPs were decorated on PDA-BNNS through spontaneous reduction of silver cations by catechol moieties of a PDA layer on BNNS, resulting in AgNP-BNNS with good dispersion stability. Incorporation of PDA on BNNS not only played a role as a surface functionalization method of BNNS, but also provided a molecular platform for creating very sophisticated two-dimensional (2D) BNNS-based hybrid nanomaterials such as metal nanoparticle-decorated BNNS.

  20. Hydrolyzed hexagonal boron nitride/polymer nanocomposites for transparent gas barrier film.

    PubMed

    Kim, Tan Young; Song, Eun Ho; Kang, Byung Hyun; Kim, Se Jung; Lee, Yun-Hi; Ju, Byeong-Kwon

    2017-03-24

    A flexible thin gas barrier film formed by layer-by-layer (LBL) assembly has been studied. We propose for the first time that hexagonal boron nitride (h-BN) can be used in LBL assembly. When dispersed in water through sonication-assisted hydrolysis, h-BN develops hydroxyl groups that electrostatically couple with the cationic polymer polydiallyldimethylammonium chloride (PDDA). This process produces hydroxyl-functional h-BN/PDDA nanocomposites. The nanocomposites exhibit well exfoliated and highly ordered h-BN nanosheets, which results in an extremely high visual clarity, with an average transmittance of 99% in the visible spectrum. Moreover, well aligned nanocomposites extend gas diffusion path that reduce water vapor transmission rate to 1.3 × 10(-2) g m(-2) d(-1). The simple and fast LBL process demonstrated here can be applied in many gas barrier applications.

  1. Synthesis of Low-Density, Carbon-Doped, Porous Hexagonal Boron Nitride Solids.

    PubMed

    Gautam, Chandkiram; Tiwary, Chandra Sekhar; Jose, Sujin; Brunetto, Gustavo; Ozden, Sehmus; Vinod, Soumya; Raghavan, Prasanth; Biradar, Santoshkumar; Galvao, Douglas Soares; Ajayan, Pulickel M

    2015-12-22

    Here, we report the scalable synthesis and characterization of low-density, porous, three-dimensional (3D) solids consisting of two-dimensional (2D) hexagonal boron nitride (h-BN) sheets. The structures are synthesized using bottom-up, low-temperature (∼300 °C), solid-state reaction of melamine and boric acid giving rise to porous and mechanically stable interconnected h-BN layers. A layered 3D structure forms due to the formation of h-BN, and significant improvements in the mechanical properties were observed over a range of temperatures, compared to graphene oxide or reduced graphene oxide foams. A theoretical model based on Density Functional Theory (DFT) is proposed for the formation of h-BN architectures. The material shows excellent, recyclable absorption capacity for oils and organic solvents.

  2. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    SciTech Connect

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon; Sup Choi, Min; Hee Choi, Jun; Zhong, Jianqiang; Chen, Wei; Jong Yoo, Won

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  3. Boron nitride nanosheets decorated with silver nanoparticles through mussel-inspired chemistry of dopamine

    NASA Astrophysics Data System (ADS)

    Kumer Roy, Arup; Park, Byoungnam; Lee, Kang Seok; Park, Sung Young; In, Insik

    2014-11-01

    Boron nitride nanosheet (BNNS) decorated with silver nanoparticles (AgNPs) was successfully synthesized via mussel-inspired chemistry of dopamine. Poly(dopamine)-functionalized BNNS (PDA-BNNS) was prepared by adding dopamine into the aqueous dispersion of hydroxylated BNNS (OH-BNNS) at alkaline condition. AgNPs were decorated on PDA-BNNS through spontaneous reduction of silver cations by catechol moieties of a PDA layer on BNNS, resulting in AgNP-BNNS with good dispersion stability. Incorporation of PDA on BNNS not only played a role as a surface functionalization method of BNNS, but also provided a molecular platform for creating very sophisticated two-dimensional (2D) BNNS-based hybrid nanomaterials such as metal nanoparticle-decorated BNNS.

  4. Self-modulated band gap in boron nitride nanoribbons and hydrogenated sheets.

    PubMed

    Zhang, Zhuhua; Guo, Wanlin; Yakobson, Boris I

    2013-07-21

    Using hybrid density functional theory calculations with van der Waals correction, we show that polar boron nitride (BN) nanoribbons can be favorably aligned via substantial hydrogen bonding at the interfaces, which induces significant interface polarizations and sharply reduces the band gap of insulating ribbons well below the silicon range. The interface polarization can strongly couple with carrier doping or applied electric fields, yielding not only enhanced stability but also widely tunable band gap for the aligned ribbons. Furthermore, similar layer-by-layer alignment also effectively reduces the band gap of a 2D hydrogenated BN sheet and even turns it into metal. This novel strategy for band gap control appears to be general in semiconducting composite nanostructures with polar nonbonding interfaces and thus offers unique opportunities for developing nanoscale electronic and optical devices.

  5. Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD

    PubMed Central

    2016-01-01

    Highly controlled Fe-catalyzed growth of monolayer hexagonal boron nitride (h-BN) films is demonstrated by the dissolution of nitrogen into the catalyst bulk via NH3 exposure prior to the actual growth step. This “pre-filling” of the catalyst bulk reservoir allows us to control and limit the uptake of B and N species during borazine exposure and thereby to control the incubation time and h-BN growth kinetics while also limiting the contribution of uncontrolled precipitation-driven h-BN growth during cooling. Using in situ X-ray diffraction and in situ X-ray photoelectron spectroscopy combined with systematic growth calibrations, we develop an understanding and framework for engineering the catalyst bulk reservoir to optimize the growth process, which is also relevant to other 2D materials and their heterostructures. PMID:26756610

  6. Nature of exciton transitions in hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Li, J.; Cao, X. K.; Hoffman, T. B.; Edgar, J. H.; Lin, J. Y.; Jiang, H. X.

    2016-03-01

    In contrast to other III-nitride semiconductors GaN and AlN, the intrinsic (or free) exciton transition in hexagonal boron nitride (h-BN) consists of rather complex fine spectral features (resolved into six sharp emission peaks) and the origin of which is still unclear. Here, the free exciton transition (FX) in h-BN bulk crystals synthesized by a solution method at atmospheric pressure has been probed by deep UV time-resolved photoluminescence (PL) spectroscopy. Based on the separations between the energy peak positions of the FX emission lines, the identical PL decay kinetics among different FX emission lines, and the known phonon modes in h-BN, we suggest that there is only one principal emission line corresponding to the direct intrinsic FX transition in h-BN, whereas all other fine features are a result of phonon-assisted transitions. The identified phonon modes are all associated with the center of the Brillouin zone. Our results offer a simple picture for the understanding of the fundamental exciton transitions in h-BN.

  7. Crystalline structure of boron nitride produced by the carbothermic method

    SciTech Connect

    Pikalov, S.N.; Germanskii, A.M.

    1987-10-01

    The use of graphite boron nitride (GBN) for the synthesis of superhard BN modification presents specific requirements for a degree of perfection of its crystalline structure. In this study the effect of technical parameters of the carbothermic process on the crystalline structure on GBN was investigated. The starting mixture, consisting of chemically pure boric acid and technical carbon P-803, was dehydrated in a muffle furnace at a temperature in excess of 1000/sup 0/K. The obtained sintered mass was ground in a ball mill and was nitrided in a Tamman laboratory furnace in a stream of nitrogen purified from oxygen and moisture. x-Ray-diffraction investigations of the synthesized GBN were done on DRON-3 diffractometer with CuK/sub ..cap alpha../ emission. One of the more important characteristics of the GBN structure perfection was the degree of its three-dimensional orderliness P/sub 3/ determined by the relationship of the number of layers in the Bragg scattering region (BSR), directed as a rule relatively close, to the adjacent total number of layers in the BSR.

  8. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates

    NASA Astrophysics Data System (ADS)

    Feigelson, Boris N.; Bermudez, Victor M.; Hite, Jennifer K.; Robinson, Zachary R.; Wheeler, Virginia D.; Sridhara, Karthik; Hernández, Sandra C.

    2015-02-01

    Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer.

  9. Interaction of carbohydrate modified boron nitride nanotubes with living cells.

    PubMed

    Emanet, Melis; Şen, Özlem; Çobandede, Zehra; Çulha, Mustafa

    2015-10-01

    Boron nitride nanotubes (BNNTs) are composed of boron and nitrogen atoms and they show significantly different properties from their carbon analogues (carbon nanotubes, CNTs). Due to their unique properties including low electrical conductivity, and imaging contrast and neutron capture properties; they can be used in biomedical applications. When their use in biological fields is considered, the route of their toxic effect should be clarified. Therefore, the study of interactions between BNNTs and living systems is important in envisaging biological applications at both cellular and sub-cellular levels to fully gain insights of their potential adverse effects. In this study, BNNTs were modified with lactose, glucose and starch and tested for their cytotoxicity. First, the interactions and the behavior of BNNTs with bovine serum albumin (BSA), Dulbecco's Modified Eagle's Medium (DMEM) and DMEM/Nutrient Mixture F-12Ham were investigated. Thereafter, their cellular uptake and the cyto- and genotoxicity on human dermal fibroblasts (HDFs) and adenocarcinoma human alveolar basal epithelial cells (A549) were evaluated. HDFs and A549 cells internalized the modified and unmodified BNNTs, and BNNTs were found to not cause significant viability change and DNA damage. A higher uptake rate of BNNTs by A549 cells compared to HDFs was observed. Moreover, a concentration-dependent cytotoxicity was observed on A549 cells while they were safer for HDFs in the same concentration range. Based on these findings, it can be concluded that BNNTs and their derivatives made with biomacromolecules might be good candidates for several applications in medicine and biomedical applications.

  10. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    SciTech Connect

    Doganov, Rostislav A.; Özyilmaz, Barbaros; Koenig, Steven P.; Yeo, Yuting; Watanabe, Kenji; Taniguchi, Takashi

    2015-02-23

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

  11. Convert Graphene Sheets to Boron Nitride and Boron Nitride-carbon Sheets via a Carbon-substitution Reaction

    SciTech Connect

    W Han; H Yu; Z Liu

    2011-12-31

    Here we discuss our synthesis of highly crystalline pure boron nitride (BN) and BN-carbon (BN-C) sheets by using graphene sheets as templates via a carbon-substitution reaction. Typically, these sheets are several micrometers wide and have a few layers. The composition ratios of BN-C sheets can be controlled by the post-treatment (remove carbon by oxidation) temperature. We also observed pure BN and BN-C nanoribbons. We characterized the BN-C sheets via Raman spectroscopy and density functional theory calculations. The results reveal that BN-C sheets with an armchair C-BN chain, and embedded C2 or C6 units in BN-dominated regions energetically are the most favorable.

  12. High-yield synthesis of boron nitride nanoribbons via longitudinal splitting of boron nitride nanotubes by potassium vapor.

    PubMed

    Sinitskii, Alexander; Erickson, Kristopher J; Lu, Wei; Gibb, Ashley L; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Zettl, Alex; Tour, James M

    2014-10-28

    Boron nitride nanoribbons (BNNRs) are theorized to have interesting electronic and magnetic properties, but their high-yield synthesis remains challenging. Here we demonstrate that potassium-induced splitting of BN nanotubes (BNNTs) is an effective high-yield method to obtain bulk quantities of high-quality BNNRs if a proper precursor material is chosen. The resulting BNNRs are crystalline; many of them have a high aspect ratio and straight parallel edges. We have observed numerous few-layer and monolayer BNNRs; the multilayered ribbons predominantly have an AA' stacking. We present a detailed microscopy study of BNNRs that provides important insights into the mechanism of the formation of BNNRs from BNNTs. We also demonstrate that the BNNTs prepared by different synthetic approaches could exhibit dramatically different reactivities in the potassium splitting reaction, which highlights the need for future comparison studies of BN nanomaterials prepared using different methods to better understand their preparation-dependent physical and chemical properties.

  13. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOEpatents

    Maya, L.

    1994-06-14

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film. 11 figs.

  14. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOEpatents

    Maya, Leon

    1994-01-01

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.

  15. Integrated Rig for the Production of Boron Nitride Nanotubes via the Pressurized Vapor-Condenser Method

    NASA Technical Reports Server (NTRS)

    Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor)

    2014-01-01

    An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.

  16. Formation of monolayer and few-layer hexagonal boron nitride nanosheets via surface segregation.

    PubMed

    Xu, Mingsheng; Fujita, Daisuke; Chen, Hongzheng; Hanagata, Nobutaka

    2011-07-01

    We report that few-layer hexagonal boron nitride (h-BN) nanosheets can be produced by using a surface segregation method. The formation of h-BN sheets is via an intermediate boron-nitrogen buffer layer. Our results suggest that surface segregation of boron and nitrogen from a solid source is an alternative approach to tailoring synthesis of h-BN sheets for potential applications such as in graphene electronics.

  17. Integrated rig for the production of boron nitride nanotubes via the pressurized vapor-condenser method

    DOEpatents

    Smith, Michael W; Jordan, Kevin C

    2014-03-25

    An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.

  18. Nanostructured Boron Nitride With High Water Dispersibility For Boron Neutron Capture Therapy

    NASA Astrophysics Data System (ADS)

    Singh, Bikramjeet; Kaur, Gurpreet; Singh, Paviter; Singh, Kulwinder; Kumar, Baban; Vij, Ankush; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Singh, Ajay; Thakur, Anup; Kumar, Akshay

    2016-10-01

    Highly water dispersible boron based compounds are innovative and advanced materials which can be used in Boron Neutron Capture Therapy for cancer treatment (BNCT). Present study deals with the synthesis of highly water dispersible nanostructured Boron Nitride (BN). Unique and relatively low temperature synthesis route is the soul of present study. The morphological examinations (Scanning/transmission electron microscopy) of synthesized nanostructures showed that they are in transient phase from two dimensional hexagonal sheets to nanotubes. It is also supported by dual energy band gap of these materials calculated from UV- visible spectrum of the material. The theoretically calculated band gap also supports the same (calculated by virtual nano lab Software). X-ray diffraction (XRD) analysis shows that the synthesized material has deformed structure which is further supported by Raman spectroscopy. The structural aspect of high water disperse ability of BN is also studied. The ultra-high disperse ability which is a result of structural deformation make these nanostructures very useful in BNCT. Cytotoxicity studies on various cell lines (Hela(cervical cancer), human embryonic kidney (HEK-293) and human breast adenocarcinoma (MCF-7)) show that the synthesized nanostructures can be used for BNCT.

  19. Nanostructured Boron Nitride With High Water Dispersibility For Boron Neutron Capture Therapy

    PubMed Central

    Singh, Bikramjeet; Kaur, Gurpreet; Singh, Paviter; Singh, Kulwinder; Kumar, Baban; Vij, Ankush; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Singh, Ajay; Thakur, Anup; Kumar, Akshay

    2016-01-01

    Highly water dispersible boron based compounds are innovative and advanced materials which can be used in Boron Neutron Capture Therapy for cancer treatment (BNCT). Present study deals with the synthesis of highly water dispersible nanostructured Boron Nitride (BN). Unique and relatively low temperature synthesis route is the soul of present study. The morphological examinations (Scanning/transmission electron microscopy) of synthesized nanostructures showed that they are in transient phase from two dimensional hexagonal sheets to nanotubes. It is also supported by dual energy band gap of these materials calculated from UV- visible spectrum of the material. The theoretically calculated band gap also supports the same (calculated by virtual nano lab Software). X-ray diffraction (XRD) analysis shows that the synthesized material has deformed structure which is further supported by Raman spectroscopy. The structural aspect of high water disperse ability of BN is also studied. The ultra-high disperse ability which is a result of structural deformation make these nanostructures very useful in BNCT. Cytotoxicity studies on various cell lines (Hela(cervical cancer), human embryonic kidney (HEK-293) and human breast adenocarcinoma (MCF-7)) show that the synthesized nanostructures can be used for BNCT. PMID:27759052

  20. Nanostructured Boron Nitride With High Water Dispersibility For Boron Neutron Capture Therapy.

    PubMed

    Singh, Bikramjeet; Kaur, Gurpreet; Singh, Paviter; Singh, Kulwinder; Kumar, Baban; Vij, Ankush; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Singh, Ajay; Thakur, Anup; Kumar, Akshay

    2016-10-19

    Highly water dispersible boron based compounds are innovative and advanced materials which can be used in Boron Neutron Capture Therapy for cancer treatment (BNCT). Present study deals with the synthesis of highly water dispersible nanostructured Boron Nitride (BN). Unique and relatively low temperature synthesis route is the soul of present study. The morphological examinations (Scanning/transmission electron microscopy) of synthesized nanostructures showed that they are in transient phase from two dimensional hexagonal sheets to nanotubes. It is also supported by dual energy band gap of these materials calculated from UV- visible spectrum of the material. The theoretically calculated band gap also supports the same (calculated by virtual nano lab Software). X-ray diffraction (XRD) analysis shows that the synthesized material has deformed structure which is further supported by Raman spectroscopy. The structural aspect of high water disperse ability of BN is also studied. The ultra-high disperse ability which is a result of structural deformation make these nanostructures very useful in BNCT. Cytotoxicity studies on various cell lines (Hela(cervical cancer), human embryonic kidney (HEK-293) and human breast adenocarcinoma (MCF-7)) show that the synthesized nanostructures can be used for BNCT.

  1. Phonon characteristics and photoluminescence of bamboo structured silicon-doped boron nitride multiwall nanotubes

    NASA Astrophysics Data System (ADS)

    Xu, Shifeng; Fan, Yi; Luo, Jingsong; Zhang, Ligong; Wang, Wenquan; Yao, Bin; An, Linan

    2007-01-01

    Bamboo structured silicon-doped boron nitride multiwall nanotubes are synthesized via catalyst-assisted pyrolysis of a boron-containing polymeric precursor. The nanotubes are characterized using transmission electron microscopy, x-ray diffraction, Raman, and Fourier-transformed infrared spectroscope. The results suggest that the Si dopants cause significant changes in the structure and phonon characteristics of the nanotubes as compared to pure boron nitride nanotubes. A broad photoluminescence band ranging between 500 and 800nm is observed from the nanotubes, which is attributed to Si dopants. Study on temperature dependence of emission intensity suggests that the thermal activation energy of the nonradiative recombination process is 35meV.

  2. A study on various fabrication routes for preparing multilayered cubic boron nitride films and sp(3)-like boron nitride films

    NASA Astrophysics Data System (ADS)

    Wong, Sing Fai

    Cubic boron nitride (cBN) has a sp3-bonded structure which leads to excellent mechanical properties. Though cBN-rich films have been successfully fabricated by many techniques, the adhesion of the films is still unsatisfactory due to the high stresses. The maximum sustainable thickness of cBN-rich films with good adhesion is widely reported to be around 200 nm, so many practical applications of cBN coatings are hindered. In this study, we designed a series of deposition schemes in a logical sequence, in order to explore whether stress can be released, or other structural forms of BN with potential applications can be made, and to gain more fundamental understanding on the growth mechanisms of various phases observed in the films. Various fabrication processes were employed according to the following sequence: (1) A single-step process. It was showed that the maximum tolerable thickness of the cBN-rich films prepared by our system (183nm) was compatible with the result in literatures (200nm). (2) A multilayered deposition process. A thick sp2-bonded boron nitride (sP2-BN) buffer layer which was relatively deformable was added, and hence some stresses were released so as to allow a 643nm-thick, 87vol.% cBN-rich layer with acceptable adhesion to grow on top. (3) An advanced multilayer process with subsequent annealing process. A zirconium layer was pre-deposited to remove the soft buffer layer after postannealing. The interface could be strengthened as the zirconium-boride/nitride was formed. (4) Ion assist deposition at unheated condition. Composite BN films containing sp3 nanoclusters embedded in a sp2-BN matrix were fabricated. The IR technique was not sensitive enough to detect spa nanoclusters, but their presence was verified by the results of other measurements. In particular, the sp3 content can be over 30vo1.%, with a hardness 20GPa. The influences of the assist beam energy and substrate temperature on the generation of the sp3 nanoclusters were investigated

  3. Order-disorder transition in a two-dimensional boron-carbon-nitride alloy

    NASA Astrophysics Data System (ADS)

    Lu, Jiong; Zhang, Kai; Feng Liu, Xin; Zhang, Han; Chien Sum, Tze; Castro Neto, Antonio H.; Loh, Kian Ping

    2013-10-01

    Two-dimensional boron-carbon-nitride materials exhibit a spectrum of electronic properties ranging from insulating to semimetallic, depending on their composition and geometry. Detailed experimental insights into the phase separation and ordering in such alloy are currently lacking. Here we report the mixing and demixing of boron-nitrogen and carbon phases on ruthenium (0001) and found that energetics for such processes are modified by the metal substrate. The brick-and-mortar patchwork observed of stoichiometrically percolated hexagonal boron-carbon-nitride domains surrounded by a network of segregated graphene nanoribbons can be described within the Blume-Emery-Griffiths model applied to a honeycomb lattice. The isostructural boron nitride and graphene assumes remarkable fluidity and can be exchanged entirely into one another by a catalytically assistant substitution. Visualizing the dynamics of phase separation at the atomic level provides the premise for enabling structural control in a two-dimensional network for broad nanotechnology applications.

  4. Order-disorder transition in a two-dimensional boron-carbon-nitride alloy.

    PubMed

    Lu, Jiong; Zhang, Kai; Liu, Xin Feng; Zhang, Han; Sum, Tze Chien; Castro Neto, Antonio H; Loh, Kian Ping

    2013-01-01

    Two-dimensional boron-carbon-nitride materials exhibit a spectrum of electronic properties ranging from insulating to semimetallic, depending on their composition and geometry. Detailed experimental insights into the phase separation and ordering in such alloy are currently lacking. Here we report the mixing and demixing of boron-nitrogen and carbon phases on ruthenium (0001) and found that energetics for such processes are modified by the metal substrate. The brick-and-mortar patchwork observed of stoichiometrically percolated hexagonal boron-carbon-nitride domains surrounded by a network of segregated graphene nanoribbons can be described within the Blume-Emery-Griffiths model applied to a honeycomb lattice. The isostructural boron nitride and graphene assumes remarkable fluidity and can be exchanged entirely into one another by a catalytically assistant substitution. Visualizing the dynamics of phase separation at the atomic level provides the premise for enabling structural control in a two-dimensional network for broad nanotechnology applications.

  5. Metastable phases of 2D boron sheets on Ag(1 1 1)

    NASA Astrophysics Data System (ADS)

    Zhong, Qing; Zhang, Jin; Cheng, Peng; Feng, Baojie; Li, Wenbin; Sheng, Shaoxiang; Li, Hui; Meng, Sheng; Chen, Lan; Wu, Kehui

    2017-03-01

    Two reproducible new phases of 2D boron sheets have been found on Ag(1 1 1). One of them shares the identical atomic structure of the previously reported S1 phase (β 12 sheet) but has a different rotational relationship with the substrate, and thus exhibits very different features in scanning tunneling microscopy (STM) images. The other new phase has a hexagonal symmetry and is proposed to be the long-expected α-sheet. Both of these two boron sheets are confirmed to be metallic by scanning tunneling spectroscopy.

  6. Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate.

    PubMed

    Uchida, Yuki; Iwaizako, Tasuku; Mizuno, Seigi; Tsuji, Masaharu; Ago, Hiroki

    2017-03-22

    Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.

  7. Evolution of Moiré Profiles from van der Waals Superstructures of Boron Nitride Nanosheets

    PubMed Central

    Liao, Yunlong; Cao, Wei; Connell, John W.; Chen, Zhongfang; Lin, Yi

    2016-01-01

    Two-dimensional (2D) van der Waals (vdW) superstructures, or vdW solids, are formed by the precise restacking of 2D nanosheet lattices, which can lead to unique physical and electronic properties that are not available in the parent nanosheets. Moiré patterns formed by the crystalline mismatch between adjacent nanosheets are the most direct features for vdW superstructures under microscopic imaging. In this article, transmission electron microscopy (TEM) observation of hexagonal Moiré patterns with unusually large micrometer-sized lateral areas (up to ~1 μm2) and periodicities (up to ~50 nm) from restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported. This observation was attributed to the long range crystallinity and the contaminant-free surfaces of these chemically inert nanosheets. Parallel-line-like Moiré fringes with similarly large periodicities were also observed. The simulations and experiments unambiguously revealed that the hexagonal patterns and the parallel fringes originated from the same rotationally mismatched vdW stacking of BNNSs and can be inter-converted by simply tilting the TEM specimen following designated directions. This finding may pave the way for further structural decoding of other 2D vdW superstructure systems with more complex Moiré images. PMID:27188697

  8. Evolution of Moiré Profiles from van der Waals Superstructures of Boron Nitride Nanosheets.

    PubMed

    Liao, Yunlong; Cao, Wei; Connell, John W; Chen, Zhongfang; Lin, Yi

    2016-05-18

    Two-dimensional (2D) van der Waals (vdW) superstructures, or vdW solids, are formed by the precise restacking of 2D nanosheet lattices, which can lead to unique physical and electronic properties that are not available in the parent nanosheets. Moiré patterns formed by the crystalline mismatch between adjacent nanosheets are the most direct features for vdW superstructures under microscopic imaging. In this article, transmission electron microscopy (TEM) observation of hexagonal Moiré patterns with unusually large micrometer-sized lateral areas (up to ~1 μm(2)) and periodicities (up to ~50 nm) from restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported. This observation was attributed to the long range crystallinity and the contaminant-free surfaces of these chemically inert nanosheets. Parallel-line-like Moiré fringes with similarly large periodicities were also observed. The simulations and experiments unambiguously revealed that the hexagonal patterns and the parallel fringes originated from the same rotationally mismatched vdW stacking of BNNSs and can be inter-converted by simply tilting the TEM specimen following designated directions. This finding may pave the way for further structural decoding of other 2D vdW superstructure systems with more complex Moiré images.

  9. Spatially Resolved One-Dimensional Boundary States in Graphene-Hexagonal Boron Nitride Planar Heterostructures

    DOE PAGES

    Li, An-Ping; Park, Jewook; Lee, Jaekwang; ...

    2014-01-01

    Two-dimensional (2D) interfaces between crystalline materials have been shown to generate unusual interfacial electronic states in complex oxides1-4. Recently, a onedimensional (1D) polar-on-nonpolar interface has been realized in hexagonal boron nitride (hBN) and graphene heterostructures 5-10, where a coherent 1D boundary is expected to possess peculiar electronic states dictated by edge states of graphene and the polarity of hBN 11-13. Here we present a combined scanning tunneling microscopy (STM) and firstprinciples theory study of the graphene-hBN boundary to provide a rare glimpse into the spatial and energetic distributions of the 1D boundary states in real-space. The interfaces studied here aremore » crystallographically coherent with sharp transitions from graphene zigzag edges to B (or N) terminated hBN atomic layers on a Cu foil substrate5. The revealed boundary states are about 0.6 eV below or above the Fermi energy depending on the termination of the hBN at the boundary, and are extended along but localized at the boundary with a lateral thickness of 2-3nm. These results suggest that unconventional physical effects similar to those observed at 2D interfaces can also exist in lower dimensions, opening a route for tuning of electronic properties at interfaces in 2D heterostructures.« less

  10. Evolution of Moiré Profiles from van der Waals Superstructures of Boron Nitride Nanosheets

    NASA Astrophysics Data System (ADS)

    Liao, Yunlong; Cao, Wei; Connell, John W.; Chen, Zhongfang; Lin, Yi

    2016-05-01

    Two-dimensional (2D) van der Waals (vdW) superstructures, or vdW solids, are formed by the precise restacking of 2D nanosheet lattices, which can lead to unique physical and electronic properties that are not available in the parent nanosheets. Moiré patterns formed by the crystalline mismatch between adjacent nanosheets are the most direct features for vdW superstructures under microscopic imaging. In this article, transmission electron microscopy (TEM) observation of hexagonal Moiré patterns with unusually large micrometer-sized lateral areas (up to ~1 μm2) and periodicities (up to ~50 nm) from restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported. This observation was attributed to the long range crystallinity and the contaminant-free surfaces of these chemically inert nanosheets. Parallel-line-like Moiré fringes with similarly large periodicities were also observed. The simulations and experiments unambiguously revealed that the hexagonal patterns and the parallel fringes originated from the same rotationally mismatched vdW stacking of BNNSs and can be inter-converted by simply tilting the TEM specimen following designated directions. This finding may pave the way for further structural decoding of other 2D vdW superstructure systems with more complex Moiré images.

  11. Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

    PubMed Central

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

  12. Polymer reinforcement using liquid-exfoliated boron nitride nanosheets

    NASA Astrophysics Data System (ADS)

    Khan, Umar; May, Peter; O'Neill, Arlene; Bell, Alan P.; Boussac, Elodie; Martin, Arnaud; Semple, James; Coleman, Jonathan N.

    2012-12-01

    We have exfoliated hexagonal boron nitride by ultrasonication in solutions of polyvinylalcohol in water. The resultant nanosheets are sterically stabilised by adsorbed polymer chains. Centrifugation-based size-selection was used to give dispersions of nanosheets with aspect ratio (length/thickness) of ~1400. Such dispersions can be used to produce polyvinylalcohol-BN composite films. Helium ion microscopy of fracture surfaces shows the nanosheets to be well dispersed and the composites to fail by pull-out. We find both modulus, Y, and strength, σB, of these composites to increase linearly with volume fraction, Vf, up to Vf ~ 0.1 vol% BN before falling off. The rates of increase are extremely high; dY/dVf = 670 GPa and dσB/dVf = 47 GPa. The former value matches theory based on continuum mechanics while the latter value is consistent with remarkably high polymer-filler interfacial strength. However, because the mechanical properties increase over such a narrow volume fraction range, the maximum values of both modulus and strength are only ~40% higher than the pure polymer. This phenomenon has also been observed for graphene-filled composites and represents a serious hurdle to the production of high performance polymer-nanosheet composites.We have exfoliated hexagonal boron nitride by ultrasonication in solutions of polyvinylalcohol in water. The resultant nanosheets are sterically stabilised by adsorbed polymer chains. Centrifugation-based size-selection was used to give dispersions of nanosheets with aspect ratio (length/thickness) of ~1400. Such dispersions can be used to produce polyvinylalcohol-BN composite films. Helium ion microscopy of fracture surfaces shows the nanosheets to be well dispersed and the composites to fail by pull-out. We find both modulus, Y, and strength, σB, of these composites to increase linearly with volume fraction, Vf, up to Vf ~ 0.1 vol% BN before falling off. The rates of increase are extremely high; dY/dVf = 670 GPa and d

  13. Thin boron nitride nanotubes with exceptionally high strength and toughness

    NASA Astrophysics Data System (ADS)

    Huang, Yang; Lin, Jing; Zou, Jin; Wang, Ming-Sheng; Faerstein, Konstantin; Tang, Chengchun; Bando, Yoshio; Golberg, Dmitri

    2013-05-01

    Bending manipulation and direct force measurements of ultrathin boron nitride nanotubes (BNNTs) were performed inside a transmission electron microscope. Our results demonstrate an obvious transition in mechanics of BNNTs when the external diameters of nanotubes are in the range of 10 nm or less. During in situ transmission electron microscopy bending tests, characteristic ``hollow'' ripple-like structures formed in the bent ultrathin BNNTs with diameters of sub-10 nm. This peculiar buckling/bending mode makes the ultrathin BNNTs hold very high post-buckling loads which significantly exceed their initial buckling forces. Exceptional compressive/bending strength as high as ~1210 MPa was observed. Moreover, the analysis of reversible bending force curves of such ultrathin nanotubes indicates that they may store/adsorb strain energy at a density of ~400 × 106 J m-3. Such nanotubes are thus very promising for strengthening and toughening of structural ceramics and may find potential applications as effective energy-absorbing materials like armor.Bending manipulation and direct force measurements of ultrathin boron nitride nanotubes (BNNTs) were performed inside a transmission electron microscope. Our results demonstrate an obvious transition in mechanics of BNNTs when the external diameters of nanotubes are in the range of 10 nm or less. During in situ transmission electron microscopy bending tests, characteristic ``hollow'' ripple-like structures formed in the bent ultrathin BNNTs with diameters of sub-10 nm. This peculiar buckling/bending mode makes the ultrathin BNNTs hold very high post-buckling loads which significantly exceed their initial buckling forces. Exceptional compressive/bending strength as high as ~1210 MPa was observed. Moreover, the analysis of reversible bending force curves of such ultrathin nanotubes indicates that they may store/adsorb strain energy at a density of ~400 × 106 J m-3. Such nanotubes are thus very promising for strengthening and

  14. Synthesis and Functionalization of Carbon and Boron Nitride Nanomaterials and Their Applications

    NASA Astrophysics Data System (ADS)

    Erickson, Kristopher John

    Carbon and boron-nitride based nanomaterials possess many exciting properties making them suitable for numerous applications spanning from electronics to advanced composites. However, these materials when synthesized often differ significantly from the idealized crystals usually considered theoretically. A thorough understanding of the structure of the materials as synthesized and how the resultant materials can be utilized for specific application purposes is required such that these applications can be effectively realized. To this end, the synthesis and characterization of carbon and boron-nitride based nanomaterials is undertaken with specific application purposes in mind. As a potential scalable synthetic route for graphene, graphene oxide (GO) and reduced graphene oxide are synthesized and characterized using atomic resolution electron microscopy. This elucidates their underlying structures revealing that the reduced form of GO does not resemble pristine graphene. The long-standing debate over the structure of GO is successfully ended with this study given the direct observation of the atomic structure of this material. To develop advanced composite materials, the functionalization of carbon and boron nitride nanotubes is undertaken. The characterization of their functionalization and incorporation within composite materials, specifically within a Kevlar polymer matrix, is presented to allow for the development of composites with significantly enhanced mechanical properties. Given a significant body of theoretical work paired with a single previous synthetic success, the synthesis of boron nitride nanoribbons is outlined. The first scalable synthesis of boron nitride nanoribbons is demonstrated resulting in long, consistent width, narrow, few-layer boron nitride nanoribbons which could be ideal for addressing these theoretical considerations. To establish a method for the synthesis of thin hexagonal-boron nitride (h-BN), the design of a specialized CVD system

  15. Efficient FEM simulation of static and free vibration behavior of single walled boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Giannopoulos, Georgios I.; Kontoni, Denise-Penelope N.; Georgantzinos, Stylianos K.

    2016-08-01

    This paper describes the static and free vibration behavior of single walled boron nitride nanotubes using a structural mechanics based finite element method. First, depending on the type of nanotube under investigation, its three dimensional nanostructure is developed according to the well-known corresponding positions of boron and nitride atoms as well as boron nitride bonds. Then, appropriate point masses are assigned to the atomic positions of the developed space frame. Next, these point masses are suitably interconnected with two-noded, linear, spring-like, finite elements. In order to simulate effectively the interactions observed between boron and nitride atoms within the nanotube, appropriate potential energy functions are introduced for these finite elements. In this manner, various atomistic models for both armchair and zigzag nanotubes with different aspect ratios are numerically analyzed and their effective elastic modulus as well as their natural frequencies and corresponding mode shapes are obtained. Regarding the free vibration analysis, the computed results reveal bending, breathing and axial modes of vibration depending on the nanotube size and chirality as well as the applied boundary support conditions. The longitudinal stiffness of the boron nitride nanotubes is found also sensitive to their geometric characteristics.

  16. Multifunctional Electroactive Nanocomposites Based on Piezoelectric Boron Nitride Nanotubes

    NASA Technical Reports Server (NTRS)

    Kang, Jin Ho; Sauti, Godfrey; Park, Cheol; Yamakov, Vesselin I.; Wise, Kristopher E.; Lowther, Sharon E.; Fay, Catharine C.; Thibeault, Sheila A.; Bryant, Robert G.

    2015-01-01

    Space exploration missions require sensors and devices capable of stable operation in harsh environments such as those that include high thermal fluctuation, atomic oxygen, and high-energy ionizing radiation. However, conventional or state-of-the-art electroactive materials like lead zirconate titanate, poly(vinylidene fluoride), and carbon nanotube (CNT)-doped polyimides have limitations on use in those extreme applications. Theoretical studies have shown that boron nitride nanotubes (BNNTs) have strength-to-weight ratios comparable to those of CNTs, excellent high-temperature stability (to 800 C in air), large electroactive characteristics, and excellent neutron radiation shielding capability. In this study, we demonstrated the experimental electroactive characteristics of BNNTs in novel multifunctional electroactive nanocomposites. Upon application of an external electric field, the 2 wt % BNNT/polyimide composite was found to exhibit electroactive strain composed of a superposition of linear piezoelectric and nonlinear electrostrictive components. When the BNNTs were aligned by stretching the 2 wt % BNNT/polyimide composite, electroactive characteristics increased by about 460% compared to the nonstretched sample. An all-nanotube actuator consisting of a BNNT buckypaper layer between two single-walled carbon nanotube buck-paper electrode layers was found to have much larger electroactive properties. The additional neutron radiation shielding properties and ultraviolet/visible/near-infrared optical properties of the BNNT composites make them excellent candidates for use in the extreme environments of space missions. utilizing the unique characteristics of BNNTs.

  17. Pentagonal monolayer crystals of carbon, boron nitride, and silver azide

    SciTech Connect

    Yagmurcukardes, M. Senger, R. T.; Sahin, H.; Kang, J.; Torun, E.; Peeters, F. M.

    2015-09-14

    In this study, we present a theoretical investigation of structural, electronic, and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B{sub 2}N{sub 4} and p-B{sub 4}N{sub 2}), and silver azide (p-AgN{sub 3}) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN{sub 3} are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B{sub 2}N{sub 4} and p-B{sub 4}N{sub 2} have negative Poisson's ratio values. On the other hand, the p-AgN{sub 3} has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B{sub 2}N{sub 4} are stable, but p-AgN{sub 3} and p-B{sub 4}N{sub 2} are vulnerable against vibrational excitations.

  18. Pentagonal monolayer crystals of carbon, boron nitride, and silver azide

    NASA Astrophysics Data System (ADS)

    Yagmurcukardes, M.; Sahin, H.; Kang, J.; Torun, E.; Peeters, F. M.; Senger, R. T.

    2015-09-01

    In this study, we present a theoretical investigation of structural, electronic, and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B2N4 and p-B4N2), and silver azide (p-AgN3) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN3 are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B2N4 and p-B4N2 have negative Poisson's ratio values. On the other hand, the p-AgN3 has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B2N4 are stable, but p-AgN3 and p-B4N2 are vulnerable against vibrational excitations.

  19. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%–33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21–4.67 nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2–7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07 ± 0.11 TPa and 0.18–0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  20. Thermal vibration characteristics of armchair boron-nitride nanotubes

    SciTech Connect

    Chandra, Anirban; Patra, Puneet Kumar; Bhattacharya, Baidurya

    2015-12-21

    A nanomechanical resonator based sensor works by detecting small changes in the natural frequency of the device in presence of external agents. In this study, we address the length and the temperature-dependent sensitivity of precompressed armchair Boron-Nitride nanotubes towards their use as sensors. The vibrational data, obtained using molecular dynamics simulations, are analyzed for frequency content through the fast Fourier transformation. As the temperature of the system rises, the vibrational spectrum becomes noisy, and the modal frequencies show a red-shift irrespective of the length of the nanotube, suggesting that the nanotube based sensors calibrated at a particular temperature may not function desirably at other temperatures. Temperature-induced noise becomes increasingly pronounced with the decrease in the length of the nanotube. For the shorter nanotube at higher temperatures, we observe multiple closely spaced peaks near the natural frequency, that create a masking effect and reduce the sensitivity of detection. However, longer nanotubes do not show these spurious frequencies, and are considerably more sensitive than the shorter ones.

  1. Realization of highly efficient hexagonal boron nitride neutron detectors

    SciTech Connect

    Maity, A.; Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2016-08-16

    Here, we report the achievement of highly efficient 10B enriched hexagonal boron nitride (h- 10BN) direct conversion neutron detectors. These detectors were realized from freestanding 4-in. diameter h- 10BN wafers 43 μm in thickness obtained from epitaxy growth and subsequent mechanical separation from sapphire substrates. Both sides of the film were subjected to ohmic contact deposition to form a simple vertical “photoconductor-type” detector. Transport measurements revealed excellent vertical transport properties including high electrical resistivity (>1013 Ω cm) and mobility-lifetime (μτ) products. A much larger μτ product for holes compared to that of electrons along the c-axis of h- BN was observed, implying that holes (electrons) behave like majority (minority) carriers in undoped h- BN. Exposure to thermal neutrons from a californium-252 (252Cf) source moderated by a high density polyethylene moderator reveals that 43 μm h- 10BN detectors possess 51.4% detection efficiency at a bias voltage of 400 V, which is the highest reported efficiency for any semiconductor-based neutron detector. The results point to the possibility of obtaining highly efficient, compact solid-state neutron detectors with high gamma rejection and low manufacturing and maintenance costs.

  2. Realization of highly efficient hexagonal boron nitride neutron detectors

    DOE PAGES

    Maity, A.; Doan, T. C.; Li, J.; ...

    2016-08-16

    Here, we report the achievement of highly efficient 10B enriched hexagonal boron nitride (h- 10BN) direct conversion neutron detectors. These detectors were realized from freestanding 4-in. diameter h- 10BN wafers 43 μm in thickness obtained from epitaxy growth and subsequent mechanical separation from sapphire substrates. Both sides of the film were subjected to ohmic contact deposition to form a simple vertical “photoconductor-type” detector. Transport measurements revealed excellent vertical transport properties including high electrical resistivity (>1013 Ω cm) and mobility-lifetime (μτ) products. A much larger μτ product for holes compared to that of electrons along the c-axis of h- BN wasmore » observed, implying that holes (electrons) behave like majority (minority) carriers in undoped h- BN. Exposure to thermal neutrons from a californium-252 (252Cf) source moderated by a high density polyethylene moderator reveals that 43 μm h- 10BN detectors possess 51.4% detection efficiency at a bias voltage of 400 V, which is the highest reported efficiency for any semiconductor-based neutron detector. The results point to the possibility of obtaining highly efficient, compact solid-state neutron detectors with high gamma rejection and low manufacturing and maintenance costs.« less

  3. Exfoliation of Hexagonal Boron Nitride via Ferric Chloride Intercalation

    NASA Technical Reports Server (NTRS)

    Hung, Ching-cheh; Hurst, Janet; Santiago, Diana; Rogers, Richard B.

    2014-01-01

    Sodium fluoride (NaF) was used as an activation agent to successfully intercalate ferric chloride (FeCl3) into hexagonal boron nitride (hBN). This reaction caused the hBN mass to increase by approx.100 percent, the lattice parameter c to decrease from 6.6585 to between 6.6565 and 6.6569 ?, the x-ray diffraction (XRD) (002) peak to widen from 0.01deg to 0.05deg of the full width half maximum value, the Fourier transform infrared (FTIR) spectrum's broad band (1277/cm peak) to change shape, and new FTIR bands to emerge at 3700 to 2700 and 1600/cm. This indicates hBN's structural and chemical properties are significantly changed. The intercalated product was hygroscopic and interacted with moisture in the air to cause further structural and chemical changes (from XRD and FTIR). During a 24-h hold at room temperature in air with 100 percent relative humidity, the mass increased another 141 percent. The intercalated product, hydrated or not, can be heated to 750 C in air to cause exfoliation. Exfoliation becomes significant after two intercalation-air heating cycles, when 20-nm nanosheets are commonly found. Structural and chemical changes indicated by XRD and FTIR data were nearly reversed after the product was placed in hydrochloric acid (HCl), resulting in purified, exfoliated, thin hBN products.

  4. DNA Translocation through Hydrophilic Nanopore in Hexagonal Boron Nitride

    NASA Astrophysics Data System (ADS)

    Zhou, Zhi; Hu, Ying; Wang, Hao; Xu, Zhi; Wang, Wenlong; Bai, Xuedong; Shan, Xinyan; Lu, Xinghua

    2013-11-01

    Ultra-thin solid-state nanopore with good wetting property is strongly desired to achieve high spatial resolution for DNA sequencing applications. Atomic thick hexagonal boron nitride (h-BN) layer provides a promising two-dimensional material for fabricating solid-state nanopores. Due to its good oxidation resistance, the hydrophilicity of h-BN nanopore device can be significantly improved by UV-Ozone treatment. The contact angle of a KCl-TE droplet on h-BN layer can be reduced from 57° to 26° after the treatment. Abundant DNA translocation events have been observed in such devices, and strong DNA-nanopore interaction has been revealed in pores smaller than 10 nm in diameter. The 1/f noise level is closely related to the area of suspended h-BN layer, and it is significantly reduced in smaller supporting window. The demonstrated performance in h-BN nanopore paves the way towards base discrimination in a single DNA molecule.

  5. Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride.

    PubMed

    Exarhos, Annemarie L; Hopper, David A; Grote, Richard R; Alkauskas, Audrius; Bassett, Lee C

    2017-03-28

    Hexagonal boron nitride (h-BN) is rapidly emerging as an attractive material for solid-state quantum engineering. Analogously to three-dimensional wide-band-gap semiconductors such as diamond, h-BN hosts isolated defects exhibiting visible fluorescence at room temperature, and the ability to position such quantum emitters within a two-dimensional material promises breakthrough advances in quantum sensing, photonics, and other quantum technologies. Critical to such applications is an understanding of the physics underlying h-BN's quantum emission. We report the creation and characterization of visible single-photon sources in suspended, single-crystal, h-BN films. With substrate interactions eliminated, we study the spectral, temporal, and spatial characteristics of the defects' optical emission. Theoretical analysis of the defects' spectra reveals similarities in vibronic coupling to h-BN phonon modes despite widely varying fluorescence wavelengths, and a statistical analysis of the polarized emission from many emitters throughout the same single-crystal flake uncovers a weak correlation between the optical dipole orientations of some defects and h-BN's primitive crystallographic axes, despite a clear misalignment for other dipoles. These measurements constrain possible defect models and, moreover, suggest that several classes of emitters can exist simultaneously throughout free-standing h-BN, whether they be different defects, different charge states of the same defect, or the result of strong local perturbations.

  6. Polymer reinforcement using liquid-exfoliated boron nitride nanosheets.

    PubMed

    Khan, Umar; May, Peter; O'Neill, Arlene; Bell, Alan P; Boussac, Elodie; Martin, Arnaud; Semple, James; Coleman, Jonathan N

    2013-01-21

    We have exfoliated hexagonal boron nitride by ultrasonication in solutions of polyvinylalcohol in water. The resultant nanosheets are sterically stabilised by adsorbed polymer chains. Centrifugation-based size-selection was used to give dispersions of nanosheets with aspect ratio (length/thickness) of ∼1400. Such dispersions can be used to produce polyvinylalcohol-BN composite films. Helium ion microscopy of fracture surfaces shows the nanosheets to be well dispersed and the composites to fail by pull-out. We find both modulus, Y, and strength, σ(B), of these composites to increase linearly with volume fraction, V(f), up to V(f)∼ 0.1 vol% BN before falling off. The rates of increase are extremely high; dY/dV(f) = 670 GPa and dσ(B)/dV(f) = 47 GPa. The former value matches theory based on continuum mechanics while the latter value is consistent with remarkably high polymer-filler interfacial strength. However, because the mechanical properties increase over such a narrow volume fraction range, the maximum values of both modulus and strength are only ∼40% higher than the pure polymer. This phenomenon has also been observed for graphene-filled composites and represents a serious hurdle to the production of high performance polymer-nanosheet composites.

  7. Advance in novel boron nitride nanosheets to nanoelectronic device applications.

    PubMed

    Sajjad, Muhammad; Morell, Gerardo; Feng, Peter

    2013-06-12

    We report low-temperature synthesis of large-scale boron nitride nanosheets (BNNSs) and their applications for high-performance Schottky diode and gas sensor. Ten minutes of synthesis with a short-pulse-laser-produced plasma deposition technique yields a large amount of highly flat, transparent BNNSs. A basic reason for using short-pulse plasma beams is to avoid nanosheet thermal ablation or have low heat generated. Consequently, it greatly reduces the stress and yield large, flat BNNSs. The average size of obtained BNNS is around 10 μm and thickness is around 1.7 nm. Carbon element has been used for doping BNNSs and achieving BNNSs-based Schottky diode and gas sensing device. Typical current versus voltage characteristics of diode are examined. The breakdown reverse voltage is around -70 V. This probably indicates that the breakdown electric field of BNNSs-based diode is up to 1 × 10(8) V/cm. Sensing behavior of BNNSs-based gas sensor toward methane diluted with dry air is also characterized. The response time and recovery time are around 3 and 5 s at the operating temperature of 150 °C. Relatively, the sensor has poor sensitivity to oxygen gas.

  8. One-dimensional surface phonon polaritons in boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Xu, Xiaoji G.; Ghamsari, Behnood G.; Jiang, Jian-Hua; Gilburd, Leonid; Andreev, Gregory O.; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Berini, Pierre; Walker, Gilbert C.

    2014-08-01

    Surface polaritons, which are electromagnetic waves coupled to material charge oscillations, have enabled applications in concentrating, guiding and harvesting optical energy below the diffraction limit. Surface plasmon polaritons involve oscillations of electrons and are accessible in noble metals at visible and near-infrared wavelengths, whereas surface phonon polaritons (SPhPs) rely on phonon resonances in polar materials, and are active in the mid-infrared. Noble metal surface plasmon polaritons have limited applications in the mid-infrared. SPhPs at flat interfaces normally possess long polariton wavelengths and provide modest field confinement/enhancement. Here we demonstrate propagating SPhPs in a one-dimensional material consisting of a boron nitride nanotube at mid-infrared wavelengths. The observed SPhP exhibits high field confinement and enhancement, and a very high effective index (neff~70). We show that the modal and propagation length characteristics of the SPhPs may be controlled through the nanotube size and the supporting substrates, enabling mid-infrared applications.

  9. One-dimensional surface phonon polaritons in boron nitride nanotubes.

    PubMed

    Xu, Xiaoji G; Ghamsari, Behnood G; Jiang, Jian-Hua; Gilburd, Leonid; Andreev, Gregory O; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Berini, Pierre; Walker, Gilbert C

    2014-08-26

    Surface polaritons, which are electromagnetic waves coupled to material charge oscillations, have enabled applications in concentrating, guiding and harvesting optical energy below the diffraction limit. Surface plasmon polaritons involve oscillations of electrons and are accessible in noble metals at visible and near-infrared wavelengths, whereas surface phonon polaritons (SPhPs) rely on phonon resonances in polar materials, and are active in the mid-infrared. Noble metal surface plasmon polaritons have limited applications in the mid-infrared. SPhPs at flat interfaces normally possess long polariton wavelengths and provide modest field confinement/enhancement. Here we demonstrate propagating SPhPs in a one-dimensional material consisting of a boron nitride nanotube at mid-infrared wavelengths. The observed SPhP exhibits high field confinement and enhancement, and a very high effective index (neff~70). We show that the modal and propagation length characteristics of the SPhPs may be controlled through the nanotube size and the supporting substrates, enabling mid-infrared applications.

  10. Controllable Synthesis of Highly Luminescent Boron Nitride Quantum Dots.

    PubMed

    Li, Hongling; Tay, Roland Yingjie; Tsang, Siu Hon; Zhen, Xu; Teo, Edwin Hang Tong

    2015-12-22

    Boron nitride quantum dots (BNQDs), as a new member of heavy metal-free quantum dots, have aroused great interest in fundamental research and practical application due to their unique physical/chemical properties. However, it is still a challenge to controllably synthesize high-quality BNQDs with high quantum yield (QY), uniform size and strong fluorescent. In this work, BNQDs have been successfully fabricated by the liquid exfoliation and the subsequent solvothermal process with respect to its facileness and easy large scale up. Importantly, BNQDs with high-quality can be controllably obtained by adjusting the synthetic parameters involved in the solvothermal process including filling factor, synthesis temperature, and duration time. Encouragingly, the as-prepared BNQDs possess strong blue luminescence with QY as high as 19.5%, which can be attributed to the synergetic effect of size, surface chemistry and edge defects. In addition, this strategy presented here provides a new reference for the controllable synthesis of other heavy metal-free QDs. Furthermore, the as-prepared BNQDs are non-toxic to cells and exhibit nanosecond-scaled lifetimes, suggesting they have great potential biological and optoelectronic applications.

  11. Cosolvents as Liquid Surfactants for Boron Nitride Nanosheet (BNNS) Dispersions.

    PubMed

    Habib, Touseef; Sundaravadivelu Devarajan, Dinesh; Khabaz, Fardin; Parviz, Dorsa; Achee, Thomas C; Khare, Rajesh; Green, Micah J

    2016-11-08

    Despite a range of promising applications, liquid-phase exfoliation of boron nitride nanosheets (BNNSs) is limited, both by low yield in common solvents as well as the disadvantages of using dissolved surfactants. One recently reported approach is the use of cosolvent systems to increase the as-obtained concentration of BNNS; the role of these solvents in aiding exfoliation and/or aiding colloidal stability of BNNSs is difficult to distinguish. In this paper, we have investigated the use of a t-butanol/water cosolvent to disperse BNNSs. We utilize solvent-exchange experiments to demonstrate that the t-butanol is in fact essential to colloidal stability; we then utilized molecular dynamics simulations to explore the mechanism of t-butanol/BNNS interactions. Taken together, the experimental and simulation results show that the key to the success of t-butanol (as compared to the other alcohols of higher or lower molecular weight) lies in its ability to act as a "liquid dispersant" which allows it to favorably interact with both water and BNNSs. Additionally, we show that the stable dispersions of BNNS in water/t-butanol systems may be freeze-dried to yield nonaggregated, redispersible BNNS powders, which would be useful in an array of industrial processes.

  12. DNA Sequencing by Hexagonal Boron Nitride Nanopore: A Computational Study

    PubMed Central

    Zhang, Liuyang; Wang, Xianqiao

    2016-01-01

    The single molecule detection associated with DNA sequencing has motivated intensive efforts to identify single DNA bases. However, little research has been reported utilizing single-layer hexagonal boron nitride (hBN) for DNA sequencing. Here we employ molecular dynamics simulations to explore pathways for single-strand DNA (ssDNA) sequencing by nanopore on the hBN sheet. We first investigate the adhesive strength between nucleobases and the hBN sheet, which provides the foundation for the hBN-base interaction and nanopore sequencing mechanism. Simulation results show that the purine base has a more remarkable energy profile and affinity than the pyrimidine base on the hBN sheet. The threading of ssDNA through the hBN nanopore can be clearly identified due to their different energy profiles and conformations with circular nanopores on the hBN sheet. The sequencing process is orientation dependent when the shape of the hBN nanopore deviates from the circle. Our results open up a promising avenue to explore the capability of DNA sequencing by hBN nanopore.

  13. Efficient gating of epitaxial boron nitride monolayers by substrate functionalization

    NASA Astrophysics Data System (ADS)

    Fedorov, A.; Praveen, C. S.; Verbitskiy, N. I.; Haberer, D.; Usachov, D.; Vyalikh, D. V.; Nefedov, A.; Wöll, C.; Petaccia, L.; Piccinin, S.; Sachdev, H.; Knupfer, M.; Büchner, B.; Fabris, S.; Grüneis, A.

    2015-09-01

    Insulating hexagonal boron nitride monolayers (h BN ) are best known for being resistant to chemical functionalization. This property makes h BN an excellent substrate for graphene heterostructures, but limits its application as an active element in nanoelectronics where tunable electronic properties are needed. Moreover, the two-dimensional-materials' community wishes to learn more about the adsorption and intercalation characteristics of alkali metals on h BN , which have direct relevance to several electrochemistry experiments that are envisioned with layered materials. Here we provide results on ionic functionalization of h BN /metal interfaces with K and Li dopants. By combining angle-resolved photoemission spectroscopy (ARPES), x-ray photoelectron spectroscopy, and density functional theory calculations, we show that the metallic substrate readily ionizes the alkali dopants and exposes h BN to large electric fields and band-energy shifts. In particular, if h BN is in between the negatively charged substrate and the positive alkali ion, this allows us to directly study, using ARPES, the effects of large electric fields on the electron energy bands of h BN .

  14. Exciton energy-momentum map of hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Fugallo, Giorgia; Aramini, Matteo; Koskelo, Jaakko; Watanabe, Kenji; Taniguchi, Takashi; Hakala, Mikko; Huotari, Simo; Gatti, Matteo; Sottile, Francesco

    2015-10-01

    Understanding and controlling the way excitons propagate in solids is a key for tailoring materials with improved optoelectronic properties. A fundamental step in this direction is the determination of the exciton energy-momentum dispersion. Here, thanks to the solution of the parameter-free Bethe-Salpeter equation (BSE), we draw and explain the exciton energy-momentum map of hexagonal boron nitride (h-BN) in the first three Brillouin zones. We show that h-BN displays strong excitonic effects not only in the optical spectra at vanishing momentum q , as previously reported, but also at large q . We validate our theoretical predictions by assessing the calculated exciton map by means of an inelastic x-ray scattering (IXS) experiment. Moreover, we solve the discrepancies between previous experimental data and calculations, proving then that the BSE is highly accurate through the whole momentum range. Therefore, these results put forward the combination BSE and IXS as the tool of choice for addressing the exciton dynamics in complex materials.

  15. Radial elasticity of multi-walled boron nitride nanotubes

    SciTech Connect

    Michael W. Smith, Cheol Park, Meng Zheng, Changhong Ke ,In-Tae Bae, Kevin Jordan

    2012-02-01

    We investigated the radial mechanical properties of multi-walled boron nitride nanotubes (MW-BNNTs) using atomic force microscopy. The employed MW-BNNTs were synthesized using pressurized vapor/condenser (PVC) methods and were dispersed in aqueous solution using ultrasonication methods with the aid of ionic surfactants. Our nanomechanical measurements reveal the elastic deformational behaviors of individual BNNTs with two to four tube walls in their transverse directions. Their effective radial elastic moduli were obtained through interpreting their measured radial deformation profiles using Hertzian contact mechanics models. Our results capture the dependences of the effective radial moduli of MW-BNNTs on both the tube outer diameter and the number of tube layers. The effective radial moduli of double-walled BNNTs are found to be several-fold higher than those of single-walled BNNTs within the same diameter range. Our work contributes directly to a complete understanding of the fundamental structural and mechanical properties of BNNTs and the pursuits of their novel structural and electronics applications.

  16. Radial elasticity of multi-walled boron nitride nanotubes.

    PubMed

    Zheng, Meng; Ke, Changhong; Bae, In-Tae; Park, Cheol; Smith, Michael W; Jordan, Kevin

    2012-03-09

    We investigated the radial mechanical properties of multi-walled boron nitride nanotubes (MW-BNNTs) using atomic force microscopy. The employed MW-BNNTs were synthesized using pressurized vapor/condenser (PVC) methods and were dispersed in aqueous solution using ultrasonication methods with the aid of ionic surfactants. Our nanomechanical measurements reveal the elastic deformational behaviors of individual BNNTs with two to four tube walls in their transverse directions. Their effective radial elastic moduli were obtained through interpreting their measured radial deformation profiles using Hertzian contact mechanics models. Our results capture the dependences of the effective radial moduli of MW-BNNTs on both the tube outer diameter and the number of tube layers. The effective radial moduli of double-walled BNNTs are found to be several-fold higher than those of single-walled BNNTs within the same diameter range. Our work contributes directly to a complete understanding of the fundamental structural and mechanical properties of BNNTs and the pursuits of their novel structural and electronics applications.

  17. Multifunctional Electroactive Nanocomposites Based on Piezoelectric Boron Nitride Nanotubes.

    PubMed

    Kang, Jin Ho; Sauti, Godfrey; Park, Cheol; Yamakov, Vesselin I; Wise, Kristopher E; Lowther, Sharon E; Fay, Catharine C; Thibeault, Sheila A; Bryant, Robert G

    2015-12-22

    Space exploration missions require sensors and devices capable of stable operation in harsh environments such as those that include high thermal fluctuation, atomic oxygen, and high-energy ionizing radiation. However, conventional or state-of-the-art electroactive materials like lead zirconate titanate, poly(vinylidene fluoride), and carbon nanotube (CNT)-doped polyimides have limitations on use in those extreme applications. Theoretical studies have shown that boron nitride nanotubes (BNNTs) have strength-to-weight ratios comparable to those of CNTs, excellent high-temperature stability (to 800 °C in air), large electroactive characteristics, and excellent neutron radiation shielding capability. In this study, we demonstrated the experimental electroactive characteristics of BNNTs in novel multifunctional electroactive nanocomposites. Upon application of an external electric field, the 2 wt % BNNT/polyimide composite was found to exhibit electroactive strain composed of a superposition of linear piezoelectric and nonlinear electrostrictive components. When the BNNTs were aligned by stretching the 2 wt % BNNT/polyimide composite, electroactive characteristics increased by about 460% compared to the nonstretched sample. An all-nanotube actuator consisting of a BNNT buckypaper layer between two single-walled carbon nanotube buckypaper electrode layers was found to have much larger electroactive properties. The additional neutron radiation shielding properties and ultraviolet/visible/near-infrared optical properties of the BNNT composites make them excellent candidates for use in the extreme environments of space missions.

  18. Spin transport in fully hexagonal boron nitride encapsulated graphene

    NASA Astrophysics Data System (ADS)

    Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Schönenberger, C.; van Wees, B. J.

    2016-03-01

    We study fully hexagonal boron nitride (hBN) encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes: thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in-between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5 -μ m -long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pinhole-free nature of the thin hBN as an efficient tunnel barrier.

  19. Realization of highly efficient hexagonal boron nitride neutron detectors

    NASA Astrophysics Data System (ADS)

    Maity, A.; Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2016-08-01

    We report the achievement of highly efficient 10B enriched hexagonal boron nitride (h-10BN) direct conversion neutron detectors. These detectors were realized from freestanding 4-in. diameter h-10BN wafers 43 μm in thickness obtained from epitaxy growth and subsequent mechanical separation from sapphire substrates. Both sides of the film were subjected to ohmic contact deposition to form a simple vertical "photoconductor-type" detector. Transport measurements revealed excellent vertical transport properties including high electrical resistivity (>1013 Ω cm) and mobility-lifetime (μτ) products. A much larger μτ product for holes compared to that of electrons along the c-axis of h-BN was observed, implying that holes (electrons) behave like majority (minority) carriers in undoped h-BN. Exposure to thermal neutrons from a californium-252 (252Cf) source moderated by a high density polyethylene moderator reveals that 43 μm h-10BN detectors possess 51.4% detection efficiency at a bias voltage of 400 V, which is the highest reported efficiency for any semiconductor-based neutron detector. The results point to the possibility of obtaining highly efficient, compact solid-state neutron detectors with high gamma rejection and low manufacturing and maintenance costs.

  20. Radial elasticity of multi-walled boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Zheng, Meng; Ke, Changhong; Bae, In-Tae; Park, Cheol; Smith, Michael W.; Jordan, Kevin

    2012-03-01

    We investigated the radial mechanical properties of multi-walled boron nitride nanotubes (MW-BNNTs) using atomic force microscopy. The employed MW-BNNTs were synthesized using pressurized vapor/condenser (PVC) methods and were dispersed in aqueous solution using ultrasonication methods with the aid of ionic surfactants. Our nanomechanical measurements reveal the elastic deformational behaviors of individual BNNTs with two to four tube walls in their transverse directions. Their effective radial elastic moduli were obtained through interpreting their measured radial deformation profiles using Hertzian contact mechanics models. Our results capture the dependences of the effective radial moduli of MW-BNNTs on both the tube outer diameter and the number of tube layers. The effective radial moduli of double-walled BNNTs are found to be several-fold higher than those of single-walled BNNTs within the same diameter range. Our work contributes directly to a complete understanding of the fundamental structural and mechanical properties of BNNTs and the pursuits of their novel structural and electronics applications.

  1. Nanotubes of boron nitride filled with molybdenum clusters.

    PubMed

    Golberg, D; Bando, Y; Kurashima, K; Sato, T

    2001-03-01

    Carbon nanotubes are known to be metallic or semiconducting, depending on their helicity and diameter. However, boron nitride (BN) nanotubes are the only nanotubular product known to date that are predicted to have stable insulating properties that are independent of their atomic structure and morphology. Thus, the BN tube has attracted prime attention as an advanced nanoinsulating shield for all types of encapsulated conducting material, i.e., metal wires, clusters, etc. However, so far there have been no successes in controlled one-dimensional filling of BN nanotubes with conductive material. We report the first experimental results on the synthesis, high-resolution transmission electron microscopy, energy dispersion X-ray analysis, and electron energy loss spectroscopy of BN nanotubes that are filled with Mo clusters over their entire length. This was accomplished by means of two-step thermochemical treatment of chemically vapor-deposited C nanotubes with B2O3, CuO, and MoO3 oxides in a flowing N2 atmosphere. The first examples of BN nanotubes filled with molybdenum clusters are reported and the formation of the first nanocable (approximately 10 nm in length), consisting of a conductive metal core and an insulating BN nanotubular shield is demonstrated.

  2. Hydrothermal Synthesis and Photoluminescence of Boron Nitride Quantum Dots

    NASA Astrophysics Data System (ADS)

    Li, Hongling; Tay, Roland Yingjie; Tsang, Siu Hon; Teo, Edwin Hang Tong

    Boron nitride quantum dots (BNQDs), as a new member of heavy metal-free quantum dots, have attracted great interest owing to its unique structure as well as fascinating physical/chemical properties. However, it is still a challenge to controllably synthesize high quality BNQDs with high quantum yield (QY), uniform size and strong luminescence. Here we present a facile and effective approach to controllablly fabricate BNQDs by snoication-solvothermal technique. Encouragingly, the as-prepared BNQDs possess strong blue luminescence with high QY of up to 19.5%, which can be attributed to the synergic effect of size, surface chemistry and edge defects. In addition, the size of the BNQDs could be controlled with a narrow size distribution of 1.32 nm and the smallest average size achieved is 2.62 nm with an average thickness of ~3 atomic layers. Furthermore, the as-prepared BNQDs are non-toxic to cells and show nanosecond-scaled lifetimes and little photobleaching effect. Therefore, it is believed that BNQDs are promising as one of the novel heavy metal-free QDs for multi-purpose applications in a range of fields. Moreover, this synthesis concept is expected to open a new window to controllably prepare other heavy metal-free QDs, as well as to understand their luminescence mechanism.

  3. Hyperbolic phonon polaritons in hexagonal boron nitride (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Dai, Siyuan; Ma, Qiong; Fei, Zhe; Liu, Mengkun; Goldflam, Michael D.; Andersen, Trond; Garnett, William; Regan, Will; Wagner, Martin; McLeod, Alexander S.; Rodin, Alexandr; Zhu, Shou-En; Watanabe, Kenji; Taniguchi, T.; Dominguez, Gerado; Thiemens, Mark; Castro Neto, Antonio H.; Janssen, Guido C. A. M.; Zettl, Alex; Keilmann, Fritz; Jarillo-Herrero, Pablo; Fogler, Michael M.; Basov, Dmitri N.

    2016-09-01

    Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. While hyperbolic responses are normally achieved with metamaterials, hexagonal boron nitride (hBN) naturally possesses this property due to the anisotropic phonons in the mid-infrared. Using scattering-type scanning near-field optical microscopy, we studied polaritonic phenomena in hBN. We performed infrared nano-imaging of highly confined and low-loss hyperbolic phonon polaritons in hBN. The polariton wavelength was shown to be governed by the hBN thickness according to a linear law persisting down to few atomic layers [1]. Additionally, we carried out the modification of hyperbolic response in meta-structures comprised of a mononlayer graphene deposited on hBN [2]. Electrostatic gating of the top graphene layer allows for the modification of wavelength and intensity of hyperbolic phonon polaritons in bulk hBN. The physics of the modification originates from the plasmon-phonon coupling in the hyperbolic medium. Furthermore, we demonstrated the "hyperlens" for subdiffractional focusing and imaging using a slab of hBN [3]. References [1] S. Dai et al., Science, 343, 1125 (2014). [2] S. Dai et al., Nature Nanotechnology, 10, 682 (2015). [3] S. Dai et al., Nature Communications, 6, 6963 (2015).

  4. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    SciTech Connect

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c-axis. The

  5. Linking Carbon and Boron-Nitride Nanotubes: Heterojunction Energetics and Band Gap Tuning

    SciTech Connect

    An, Wei; Turner, C. H.

    2010-08-05

    We investigate the energetics of forming heteronanotubes, which are combinations of pure carbon nanotube (CNT) segments and boron-nitride nanotube (BNNT)segments. Our density functional theory calculations predict that the adverse impacts of heterojunctions on the nanotube stability can be minimized if the CNTand/or the BNNT building block segments are sufficiently large along the axial direction (corresponding to circular junctions). As such, carbon-boron-nitride heteronanotubes can be thermodynamically competitive in stability, as compared to pure CNTs and BNNTs of similar geometry, and this is in good agreement with previous experimental observations. In addition, we find that the highest occupied crystal orbital/lowest unoccupied crystal orbital (HOCO-LUCO) gap of carbon-boron-nitride heteronanotubes can be significantly tuned by modifying the CNT and BNNT combinations, the tube chirality, or the junction geometry (i.e., circular or linear).

  6. Epitaxy of highly ordered organic semiconductor crystallite networks supported by hexagonal boron nitride

    PubMed Central

    Matković, Aleksandar; Genser, Jakob; Lüftner, Daniel; Kratzer, Markus; Gajić, Radoš; Puschnig, Peter; Teichert, Christian

    2016-01-01

    This study focuses on hexagonal boron nitride as an ultra-thin van der Waals dielectric substrate for the epitaxial growth of highly ordered crystalline networks of the organic semiconductor parahexaphenyl. Atomic force microscopy based morphology analysis combined with density functional theory simulations reveal their epitaxial relation. As a consequence, needle-like crystallites of parahexaphenyl grow with their long axes oriented five degrees off the hexagonal boron nitride zigzag directions. In addition, by tuning the deposition temperature and the thickness of hexagonal boron nitride, ordered networks of needle-like crystallites as long as several tens of micrometers can be obtained. A deeper understanding of the organic crystallites growth and ordering at ultra-thin van der Waals dielectric substrates will lead to grain boundary-free organic field effect devices, limited only by the intrinsic properties of the organic semiconductors. PMID:27929042

  7. Molecular dynamics study of the torsional vibration characteristics of boron-nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Ansari, R.; Ajori, S.

    2014-08-01

    In recent years, synthesizing inorganic nanostructures such as boron nitride nanotubes (BNNTs) has led to extensive studies on their exceptional properties. In this study, the torsional vibration behavior of boron-nitride nanotubes (BNNTs) is explored on the basis of molecular dynamics (MD) simulation. The results show that the torsional frequency is sensitive to geometrical parameters such as length and boundary conditions. The axial vibration is found to be induced by torsional vibration of nanotubes which can cause instability in the nanostructure. It is also observed that the torsional frequency of BNNTs is higher than that of their carbon counterpart. Moreover, the shear modulus is predicted by incorporating MD simulation numerical results into torsional vibration frequency obtained through continuum-based model of tubes. Finally, it is seen that the torsional frequency of double-walled boron-nitride nanotubes (DWBNNTs) is between the frequencies of their constituent inner and outer tubes.

  8. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    PubMed

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  9. Decorated graphyne and its boron nitride analogue as versatile nanomaterials for CO detection

    NASA Astrophysics Data System (ADS)

    Omidvar, Akbar; Mohajeri, Afshan

    2015-12-01

    The sensitivity of a new two-dimensional (2D) carbon allotrope built from sp- and sp2-hybridised carbon atoms, graphyne (GY), as well as its boron nitride analogue (BN-yne) towards CO molecule has been theoretically investigated. Indeed, a theoretical understanding of the interaction between gas molecules and extended carbon-based network structures is crucial for developing new materials that could have a wide range of applications. Here, we report our first-principles calculations to explore the impact of metal decoration on the GY and BN-yne upon the CO adsorption. We predict that Ca and Li decorations significantly enhance the CO-sensing ability of the GY and BN-yne compared to that of their pristine sheets. Owing to strong interactions between CO and the decorated GY and BN-yne, dramatic changes in the electronic properties of the sheets together with large band gap variations were observed. The present study sheds a deep insight into the sensing properties of the novel carbon-based 2D structures beyond the graphene sheet.

  10. Characterization of two-dimensional hexagonal boron nitride using scanning electron and scanning helium ion microscopy

    NASA Astrophysics Data System (ADS)

    Guo, Hongxuan; Gao, Jianhua; Ishida, Nobuyuki; Xu, Mingsheng; Fujita, Daisuke

    2014-01-01

    Characterization of the structural and physical properties of two-dimensional (2D) materials, such as layer number and inelastic mean free path measurements, is very important to optimize their synthesis and application. In this study, we characterize the layer number and morphology of hexagonal boron nitride (h-BN) nanosheets on a metallic substrate using field emission scanning electron microscopy (FE-SEM) and scanning helium ion microscopy (HIM). Using scanning beams of various energies, we could analyze the dependence of the intensities of secondary electrons on the thickness of the h-BN nanosheets. Based on the interaction between the scanning particles (electrons and helium ions) and h-BN nanosheets, we deduced an exponential relationship between the intensities of secondary electrons and number of layers of h-BN. With the attenuation factor of the exponential formula, we calculate the inelastic mean free path of electrons and helium ions in the h-BN nanosheets. Our results show that HIM is more sensitive and consistent than FE-SEM for characterizing the number of layers and morphology of 2D materials.

  11. Characterization of two-dimensional hexagonal boron nitride using scanning electron and scanning helium ion microscopy

    SciTech Connect

    Guo, Hongxuan E-mail: msxu@zju.edu.cn; Gao, Jianhua; Ishida, Nobuyuki; Xu, Mingsheng E-mail: msxu@zju.edu.cn; Fujita, Daisuke

    2014-01-20

    Characterization of the structural and physical properties of two-dimensional (2D) materials, such as layer number and inelastic mean free path measurements, is very important to optimize their synthesis and application. In this study, we characterize the layer number and morphology of hexagonal boron nitride (h-BN) nanosheets on a metallic substrate using field emission scanning electron microscopy (FE-SEM) and scanning helium ion microscopy (HIM). Using scanning beams of various energies, we could analyze the dependence of the intensities of secondary electrons on the thickness of the h-BN nanosheets. Based on the interaction between the scanning particles (electrons and helium ions) and h-BN nanosheets, we deduced an exponential relationship between the intensities of secondary electrons and number of layers of h-BN. With the attenuation factor of the exponential formula, we calculate the inelastic mean free path of electrons and helium ions in the h-BN nanosheets. Our results show that HIM is more sensitive and consistent than FE-SEM for characterizing the number of layers and morphology of 2D materials.

  12. Comparative study of the interfaces of graphene and hexagonal boron nitride with silver

    NASA Astrophysics Data System (ADS)

    Garnica, Manuela; Schwarz, Martin; Ducke, Jacob; He, Yuanqin; Bischoff, Felix; Barth, Johannes V.; Auwärter, Willi; Stradi, Daniele

    2016-10-01

    Silver opens up interesting perspectives in the fabrication of complex systems based on heteroepitaxial layers after the growth of a silicene layer on its (111) face has been proposed. In this work we explore different synthesis methods of hexagonal boron nitride (h -BN) and graphene sheets on silver. The resulting layers have been examined by high-resolution scanning tunneling microscopy. A comparison of the interfacial electronic band structure upon growth of the distinct two-dimensional (2D) layers has been performed by scanning tunneling spectroscopy and complementary first-principle calculations. We demonstrate that the adsorption of the 2D layers has an effect on the binding energy of the Shockley state and the surface potential by lowering the local work function. These effects are larger in the case of graphene where the surface state of Ag(111) is depopulated due to charge transfer to the graphene. Furthermore, we show that the electronic properties of the h -BN/silver system can be tuned by employing different thicknesses of silver ranging from a few monolayers on Cu(111) to the single crystal Ag substrate.

  13. Space-charge limited transport in large-area monolayer hexagonal boron nitride.

    PubMed

    Mahvash, Farzaneh; Paradis, Etienne; Drouin, Dominique; Szkopek, Thomas; Siaj, Mohamed

    2015-04-08

    Hexagonal boron nitride (hBN) is a wide-gap material that has attracted significant attention as an ideal dielectric substrate for 2D crystal heterostructures. We report here the first observation of in-plane charge transport in large-area monolayer hBN, grown by chemical vapor deposition. The quadratic scaling of current with voltage at high bias corresponds to a space-charge limited conduction mechanism, with a room-temperature mobility reaching up to 0.01 cm(2)/(V s) at electric fields up to 100 kV/cm in the absence of dielectric breakdown. The observation of in-plane charge transport highlights the semiconducting nature of monolayer hBN, and identifies hBN as a wide-gap 2D crystal capable of supporting charge transport at high field. Future exploration of charge transport in hBN is motivated by the fundamental study of UV optoelectronics and the massive Dirac fermion spectrum of hBN.

  14. Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.

    PubMed

    Velasco, Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

    2016-03-09

    Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices.

  15. Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

    SciTech Connect

    Jiang, H. X.; Lin, Jing Yu

    2016-09-07

    This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.

  16. Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

    DOE PAGES

    Jiang, H. X.; Lin, Jing Yu

    2016-09-07

    This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BNmore » epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.« less

  17. Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

    SciTech Connect

    Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

    2013-12-09

    Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO{sub 2}. Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO{sub 2} as an electron acceptor exhibits photoconversion efficiency ∼46% more than BHJ employed unpassivated TiO{sub 2}. Dominant interfacial recombination pathways such as electron capture by TiO{sub 2} surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO{sub 2}, allowing electronic transport at TiO{sub 2}/h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO{sub 2}/CdSe interface.

  18. New metal catalyzed syntheses of nanostructured boron nitride and alkenyldecaboranes

    NASA Astrophysics Data System (ADS)

    Chatterjee, Shahana

    The goals of the research described in this dissertation were two-fold. The first goal was to develop new methods, employing metal-catalyzed chemical vapor deposition reactions of molecular polyborane precursors, for the production of boron nitride nanostructured materials, including both boron nitride nanotubes (BNNTs) and boron nitride nanosheets (BNNS). The second goal was to develop new systematic metal-catalyzed reactions for polyboranes that would facilitate their functionalization for possible biomedical and/or materials applications. The syntheses of multi- and double-walled BNNTs were achieved with the aid of a floating nickel catalyst via the catalytic chemical vapor deposition (CCVD) of borazine (B3N3H6) or decaborane (B10H14) molecular precursors in ammonia atmospheres, with each precursor having its own advantages. While borazine is a single-source precursor containing both boron and nitrogen, the decaborane-based syntheses required the additional step of reaction with ammonia. However, the higher observed BNNT yields and the ease of handling and commercial availability of decaborane are distinct advantages. The BNNTs derived from both precursors were crystalline with highly ordered structures. The BNNTs grown at 1200 ºC from borazine were mainly double walled, with lengths up to 0.2 µm and ˜2 nm diameters. The BNNTs grown at 1200-1300 ºC from decaborane were double- and multi-walled, with the double-walled nanotubes having ˜2 nm inner diameters and the multi-walled nanotubes (˜10 walls) having ˜4-5 nm inner diameters and ˜12-14 nm outer diameters. BNNTs grown from decaborane at 1300 ºC were longer, averaging ˜0.6 µm, whereas those grown at 1200 ºC had average lengths of ˜0.2 µm. The BNNTs were characterized using scanning and transmission electron microscopies (SEM and TEM), and electron energy loss spectroscopy (EELS). This floating catalyst method now provides a catalytic and potentially scalable route to BNNTs with low defect density

  19. Hexagonal boron nitride: Ubiquitous layered dielectric for two-dimensional electronics

    NASA Astrophysics Data System (ADS)

    Jain, Nikhil

    Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in "3D graphene" superlattice. First, CVD-grown graphene on h-BN substrate shows improved conductivity and resilience to thermally induced breakdown, as compared with graphene on SiO2, potentially useful for high-speed graphene devices and on-chip interconnects. h-BN is also explored as a gate dielectric for graphene field-effect transistor with 2D heterostructure design. The dielectric strength and tunneling behavior of h-BN are investigated, confirming its robust nature. Next, h-BN is studied as a passivation layer for graphene electronics. In addition to significant improvement in current density and breakdown threshold, fully encapsulated graphene exhibits minimal environmental sensitivity, a key benefit to 2D materials which have only surfaces. Lastly, reduction in interlayer carrier scattering is observed in a double-layered graphene setup with ultrathin h-BN multilayer as an interposing layer. The DFT simulation and Raman spectral analysis indicate reduction in interlayer scattering. The decoupling of the two graphene monolayers is further confirmed by electrical characterization, as compared with other referencing mono- and multilayer configurations. The heterostructure serves as the building element in "3D graphene", a versatile platform for future electronics.

  20. Assessing cytotoxicity of boron nitride nanotubes: Interference with the MTT assay

    SciTech Connect

    Ciofani, Gianni; Danti, Serena; D'Alessandro, Delfo; Moscato, Stefania; Menciassi, Arianna

    2010-04-02

    Thanks to a non-covalent wrapping with glycol-chitosan, highly biocompatible and highly concentrated dispersions of boron nitride nanotubes were obtained and tested on human neuroblastoma cells. A systematic investigation of the cytotoxicity of these nanovectors with several complementary qualitative and quantitative assays allowed a strong interference with the MTT metabolic assay to be highlighted, similar to a phenomenon already observed for carbon nanotubes, that would wrongly suggest toxicity of boron nitride nanotubes. These results confirm the high complexity of these new nanomaterials, and the needing of extensive investigations on their exciting potential applications in the biomedical field.

  1. Wetting and prewetting of water on top of a single sheet of hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Gordillo, M. C.; Martí, J.

    2011-07-01

    Wetting of a single hexagonal boron nitride sheet by liquid water has been investigated by molecular dynamics simulations within a temperature range between 278 and 373 K. The wetting temperature was found to be ~310 K, while the onset of prewetting happens around the much higher temperature of 354 K. The static (hydrogen-bond populations, density profiles, energy per molecule) and dynamic (diffusion coefficients) properties of water in the stable phases in this temperature range were also studied and compared to those of water on graphene. The results indicate that hydrophobicity of boron nitride is milder than that of graphene.

  2. Thermodynamic approach to boron nitride nanotube solubility and dispersion

    NASA Astrophysics Data System (ADS)

    Tiano, A. L.; Gibbons, L.; Tsui, M.; Applin, S. I.; Silva, R.; Park, C.; Fay, C. C.

    2016-02-01

    Inadequate dispersion of nanomaterials is a critical issue that significantly limits the potential properties of nanocomposites and when overcome, will enable further enhancement of material properties. The most common methods used to improve dispersion include surface functionalization, surfactants, polymer wrapping, and sonication. Although these approaches have proven effective, they often achieve dispersion by altering the surface or structure of the nanomaterial and ultimately, their intrinsic properties. Co-solvents are commonly utilized in the polymer, paint, and art conservation industries to selectively dissolve materials. These co-solvents are utilized based on thermodynamic interaction parameters and are chosen so that the original materials are not affected. The same concept was applied to enhance the dispersion of boron nitride nanotubes (BNNTs) to facilitate the fabrication of BNNT nanocomposites. Of the solvents tested, dimethylacetamide (DMAc) exhibited the most stable, uniform dispersion of BNNTs, followed by N,N-dimethylformamide (DMF), acetone, and N-methyl-2-pyrrolidone (NMP). Utilizing the known Hansen solubility parameters of these solvents in comparison to the BNNT dispersion state, a region of good solubility was proposed. This solubility region was used to identify co-solvent systems that led to improved BNNT dispersion in poor solvents such as toluene, hexane, and ethanol. Incorporating the data from the co-solvent studies further refined the proposed solubility region. From this region, the Hansen solubility parameters for BNNTs are thought to lie at the midpoint of the solubility sphere: 16.8, 10.7, and 9.0 MPa1/2 for δd, δp, and δh, respectively, with a calculated Hildebrand parameter of 21.8 MPa1/2.Inadequate dispersion of nanomaterials is a critical issue that significantly limits the potential properties of nanocomposites and when overcome, will enable further enhancement of material properties. The most common methods used to

  3. Surface Chemistry, Microstructure, and Tribological Properties of Cubic Boron Nitride Films

    NASA Technical Reports Server (NTRS)

    Watanabe, Shuichi; Wheeler, Donald R.; Abel, Phillip B.; Street, Kenneth W.; Miyoshi, Kazuhisa; Murakawa, Masao; Miyake, Shojiro

    1998-01-01

    This report deals with the surface chemistry, microstructure, bonding state, morphology, and friction and wear properties of cubic boron nitride (c-BN) films that were synthesized by magnetically enhanced plasma ion plating. Several analytical techniques - x-ray photoelectron spectroscopy, transmission electron microscopy and electron diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, and surface profilometry - were used to characterize the films. Sliding friction experiments using a ball-on-disk configuration were conducted for the c-BN films in sliding contact with 440C stainless-steel balls at room temperature in ultrahigh vacuum (pressure, 10(exp -6), in ambient air, and under water lubrication. Results indicate that the boron-to-nitrogen ratio on the surface of the as-deposited c-BN film is greater than 1 and that not all the boron is present as boron nitride but a small percentage is present as an oxide. Both in air and under water lubrication, the c-BN film in sliding contact with steel showed a low wear rate, whereas a high wear rate was observed in vacuum. In air and under water lubrication, c-BN exhibited wear resistance superior to that of amorphous boron nitride, titanium nitride, and titanium carbide.

  4. Thermal neutron detectors based on hexagonal boron nitride epilayers

    NASA Astrophysics Data System (ADS)

    Doan, T. C.; Marty, A.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2016-09-01

    Solid-state neutron detectors with high performances are urgently sought after for the detection of fissile materials. Until now, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We have successfully synthesized hexagonal boron nitride (h-BN) epilayers with varying thicknesses (0.3 μm - 50 μm) by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. In this paper, we present the detailed characterization of thermal neutron detectors fabricated from h-BN epilayers with a thickness up to 5 m to obtain insights into the h-BN epilayer thickness dependence of the device performance. The results revealed that the charge collection efficiency is almost independent of the h-BN epilayer thickness. By minimizing h-BN material removal by dry etching, it was shown that detectors incorporating an isotopically 10B-enriched h-BN epilayer of 2.7 μm in thickness exhibited an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. By doing away altogether with dry etching, we have successfully realized a simple vertical 43 μm thick h-10BN detector which delivers a detection efficiency of 51.4% for thermal neutrons, which is the highest reported efficiency for any semiconductor-based neutron detector The h-BN detectors possess all the advantages of semiconductor devices including low cost, high efficiency and sensitivity, wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

  5. Large-area monolayer hexagonal boron nitride on Pt foil.

    PubMed

    Park, Ji-Hoon; Park, Jin Cheol; Yun, Seok Joon; Kim, Hyun; Luong, Dinh Hoa; Kim, Soo Min; Choi, Soo Ho; Yang, Woochul; Kong, Jing; Kim, Ki Kang; Lee, Young Hee

    2014-08-26

    Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for two-dimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. Here, we report the systematical study of h-BN growth on Pt foil by using low pressure chemical vapor deposition with a borazine source. The monolayer h-BN film was obtained over the whole Pt foil (2 × 5 cm(2)) under <100 mTorr, where the size is limited only by the Pt foil size. A borazine source was catalytically decomposed on the Pt surface, leading to the self-limiting growth of the monolayer without the associating precipitation, which is very similar to the growth of graphene on Cu. The orientation of the h-BN domains was largely confined by the Pt domain, which is confirmed by polarizing optical microscopy (POM) assisted by the nematic liquid crystal (LC) film. The total pressure and orientation of the Pt lattice plane are crucial parameters for thickness control. At high pressure (∼0.5 Torr), thick film was grown on Pt (111), and in contrast, thin film was grown on Pt (001). Our advances in monolayer h-BN growth will play an important role to further develop a high quality h-BN film that can be used for vertical tunneling, optoelectronic devices and growth templates for a variety of heterostructures.

  6. Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial.

    PubMed

    Dai, S; Ma, Q; Liu, M K; Andersen, T; Fei, Z; Goldflam, M D; Wagner, M; Watanabe, K; Taniguchi, T; Thiemens, M; Keilmann, F; Janssen, G C A M; Zhu, S-E; Jarillo-Herrero, P; Fogler, M M; Basov, D N

    2015-08-01

    Hexagonal boron nitride (h-BN) is a natural hyperbolic material, in which the dielectric constants are the same in the basal plane (ε(t) ≡ ε(x) = ε(y)) but have opposite signs (ε(t)ε(z) < 0) in the normal plane (ε(z)). Owing to this property, finite-thickness slabs of h-BN act as multimode waveguides for the propagation of hyperbolic phonon polaritons--collective modes that originate from the coupling between photons and electric dipoles in phonons. However, control of these hyperbolic phonon polaritons modes has remained challenging, mostly because their electrodynamic properties are dictated by the crystal lattice of h-BN. Here we show, by direct nano-infrared imaging, that these hyperbolic polaritons can be effectively modulated in a van der Waals heterostructure composed of monolayer graphene on h-BN. Tunability originates from the hybridization of surface plasmon polaritons in graphene with hyperbolic phonon polaritons in h-BN, so that the eigenmodes of the graphene/h-BN heterostructure are hyperbolic plasmon-phonon polaritons. The hyperbolic plasmon-phonon polaritons in graphene/h-BN suffer little from ohmic losses, making their propagation length 1.5-2.0 times greater than that of hyperbolic phonon polaritons in h-BN. The hyperbolic plasmon-phonon polaritons possess the combined virtues of surface plasmon polaritons in graphene and hyperbolic phonon polaritons in h-BN. Therefore, graphene/h-BN can be classified as an electromagnetic metamaterial as the resulting properties of these devices are not present in its constituent elements alone.

  7. Thermodynamic approach to boron nitride nanotube solubility and dispersion.

    PubMed

    Tiano, A L; Gibbons, L; Tsui, M; Applin, S I; Silva, R; Park, C; Fay, C C

    2016-02-21

    Inadequate dispersion of nanomaterials is a critical issue that significantly limits the potential properties of nanocomposites and when overcome, will enable further enhancement of material properties. The most common methods used to improve dispersion include surface functionalization, surfactants, polymer wrapping, and sonication. Although these approaches have proven effective, they often achieve dispersion by altering the surface or structure of the nanomaterial and ultimately, their intrinsic properties. Co-solvents are commonly utilized in the polymer, paint, and art conservation industries to selectively dissolve materials. These co-solvents are utilized based on thermodynamic interaction parameters and are chosen so that the original materials are not affected. The same concept was applied to enhance the dispersion of boron nitride nanotubes (BNNTs) to facilitate the fabrication of BNNT nanocomposites. Of the solvents tested, dimethylacetamide (DMAc) exhibited the most stable, uniform dispersion of BNNTs, followed by N,N-dimethylformamide (DMF), acetone, and N-methyl-2-pyrrolidone (NMP). Utilizing the known Hansen solubility parameters of these solvents in comparison to the BNNT dispersion state, a region of good solubility was proposed. This solubility region was used to identify co-solvent systems that led to improved BNNT dispersion in poor solvents such as toluene, hexane, and ethanol. Incorporating the data from the co-solvent studies further refined the proposed solubility region. From this region, the Hansen solubility parameters for BNNTs are thought to lie at the midpoint of the solubility sphere: 16.8, 10.7, and 9.0 MPa(1/2) for δd, δp, and δh, respectively, with a calculated Hildebrand parameter of 21.8 MPa(1/2).

  8. Electron affinity of cubic boron nitride terminated with vanadium oxide

    SciTech Connect

    Yang, Yu; Sun, Tianyin; Shammas, Joseph; Hao, Mei; Nemanich, Robert J.; Kaur, Manpuneet

    2015-10-28

    A thermally stable negative electron affinity (NEA) for a cubic boron nitride (c-BN) surface with vanadium-oxide-termination is achieved, and its electronic structure was analyzed with in-situ photoelectron spectroscopy. The c-BN films were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition employing BF{sub 3} and N{sub 2} as precursors. Vanadium layers of ∼0.1 and 0.5 nm thickness were deposited on the c-BN surface in an electron beam deposition system. Oxidation of the metal layer was achieved by an oxygen plasma treatment. After 650 °C thermal annealing, the vanadium oxide on the c-BN surface was determined to be VO{sub 2}, and the surfaces were found to be thermally stable, exhibiting an NEA. In comparison, the oxygen-terminated c-BN surface, where B{sub 2}O{sub 3} was detected, showed a positive electron affinity of ∼1.2 eV. The B{sub 2}O{sub 3} evidently acts as a negatively charged layer introducing a surface dipole directed into the c-BN. Through the interaction of VO{sub 2} with the B{sub 2}O{sub 3} layer, a B-O-V layer structure would contribute a dipole between the O and V layers with the positive side facing vacuum. The lower enthalpy of formation for B{sub 2}O{sub 3} is favorable for the formation of the B-O-V layer structure, which provides a thermally stable surface dipole and an NEA surface.

  9. Thermodynamic Approach to Boron Nitride Nanotube Solubility and Dispersion

    NASA Technical Reports Server (NTRS)

    Tiano, A. L.; Gibbons, L.; Tsui, M.; Applin, S. I.; Silva, R.; Park, C.; Fay, C. C.

    2016-01-01

    Inadequate dispersion of nanomaterials is a critical issue that significantly limits the potential properties of nanocomposites and when overcome, will enable further enhancement of material properties. The most common methods used to improve dispersion include surface functionalization, surfactants, polymer wrapping, and sonication. Although these approaches have proven effective, they often achieve dispersion by altering the surface or structure of the nanomaterial and ultimately, their intrinsic properties. Co-solvents are commonly utilized in the polymer, paint, and art conservation industries to selectively dissolve materials. These co-solvents are utilized based on thermodynamic interaction parameters and are chosen so that the original materials are not affected. The same concept was applied to enhance the dispersion of boron nitride nanotubes (BNNTs) to facilitate the fabrication of BNNT nanocomposites. Of the solvents tested, dimethylacetamide (DMAc) exhibited the most stable, uniform dispersion of BNNTs, followed by N,N-dimethylformamide (DMF), acetone, and N-methyl-2-pyrrolidone (NMP). Utilizing the known Hansen solubility parameters of these solvents in comparison to the BNNT dispersion state, a region of good solubility was proposed. This solubility region was used to identify co-solvent systems that led to improved BNNT dispersion in poor solvents such as toluene, hexane, and ethanol. Incorporating the data from the co-solvent studies further refined the proposed solubility region. From this region, the Hansen solubility parameters for BNNTs are thought to lie at the midpoint of the solubility sphere: 16.8, 10.7, and 9.0 MPa(exp 1/2) for delta d, delta p, and delta h, respectively, with a calculated Hildebrand parameter of 21.8 MPa)exp 1/2).

  10. Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial

    NASA Astrophysics Data System (ADS)

    Dai, S.; Ma, Q.; Liu, M. K.; Andersen, T.; Fei, Z.; Goldflam, M. D.; Wagner, M.; Watanabe, K.; Taniguchi, T.; Thiemens, M.; Keilmann, F.; Janssen, G. C. A. M.; Zhu, S.-E.; Jarillo-Herrero, P.; Fogler, M. M.; Basov, D. N.

    2015-08-01

    Hexagonal boron nitride (h-BN) is a natural hyperbolic material, in which the dielectric constants are the same in the basal plane (ɛt ≡ ɛx = ɛy) but have opposite signs (ɛtɛz < 0) in the normal plane (ɛz). Owing to this property, finite-thickness slabs of h-BN act as multimode waveguides for the propagation of hyperbolic phonon polaritons—collective modes that originate from the coupling between photons and electric dipoles in phonons. However, control of these hyperbolic phonon polaritons modes has remained challenging, mostly because their electrodynamic properties are dictated by the crystal lattice of h-BN. Here we show, by direct nano-infrared imaging, that these hyperbolic polaritons can be effectively modulated in a van der Waals heterostructure composed of monolayer graphene on h-BN. Tunability originates from the hybridization of surface plasmon polaritons in graphene with hyperbolic phonon polaritons in h-BN, so that the eigenmodes of the graphene/h-BN heterostructure are hyperbolic plasmon-phonon polaritons. The hyperbolic plasmon-phonon polaritons in graphene/h-BN suffer little from ohmic losses, making their propagation length 1.5-2.0 times greater than that of hyperbolic phonon polaritons in h-BN. The hyperbolic plasmon-phonon polaritons possess the combined virtues of surface plasmon polaritons in graphene and hyperbolic phonon polaritons in h-BN. Therefore, graphene/h-BN can be classified as an electromagnetic metamaterial as the resulting properties of these devices are not present in its constituent elements alone.

  11. Optical and Electronic Properties of 2D Graphitic Carbon-Nitride and Carbon Enriched Alloys

    NASA Astrophysics Data System (ADS)

    Therrien, Joel; Li, Yancen; Schmidt, Daniel; Masaki, Michael; Syed, Abdulmannan

    The two-dimensional form of graphitic carbon-nitride (gCN) has been successfully synthesized using a simple CVD process. In it's pure form, the carbon to nitrogen ratio is 0.75. By adding a carbon bearing gas to the growth environment, the C/N ratio can be increased, ultimately reaching the pure carbon form: graphene. Unlike attempts at making a 2D alloy system out of BCN, the CN system does not suffer from phase segregation and thus forms a homogeneous alloy. The synthesis approach and electronic and optical properties will be presented for the pure gCN and a selection of alloy compositions.

  12. Effect of MoO3 on the synthesis of boron nitride nanotubes over Fe and Ni catalysts.

    PubMed

    Nithya, Jeghan Shrine Maria; Pandurangan, Arumugam

    2012-05-01

    Synthesis of boron nitride nanotubes at reduced temperature is important for industrial manufactures. In this study boron nitride nanotubes were synthesized by thermal evaporation method using B/Fe2O3/MoO3 and B/Ni2O3/MoO3 mixtures separately with ammonia as the nitrogen source. The growth of boron nitride nanotubes occurred at 1100 degrees C, which was relatively lower than other metal oxides assisted growth processes requiring higher than 1200 degrees C. MoO3 promoted formation of B2O2 and aided boron nitride nanotubes growth at a reduced temperature. The boron nitride nanotubes with bamboo shaped, nested cone structured and straight tubes like forms were evident from the high resolution transmission electron microscopy. Metallic Fe and Ni, formed during the process, were the catalysts for the growth of boron nitride nanotubes. Their formation was established by X-ray diffraction. FT Raman showed a peak due to B-N vibration of BNNTs close to 1370 cm(-1). Hence MoO3 assisted growth of boron nitride nanotubes is advantageous, as it significantly reduced the synthesis temperature.

  13. Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire

    NASA Astrophysics Data System (ADS)

    Ahmed, Kawser; Dahal, Rajendra; Weltz, Adam; J-Q Lu, James; Danon, Yaron; Bhat, Ishwara B.

    2017-01-01

    This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low temperature (850 °C), which enabled subsequent epitaxial hBN growth at 1350 °C. The influences of the sapphire nitridation temperature and the growth temperature on the film quality were analyzed by x-ray diffraction (XRD) measurements. Higher than optimum nitridation and growth temperatures improve the crystalline quality of the nitridated layer, but does not favor the epitaxial growth of hBN. hBN films grown at the optimum conditions exhibit the c-lattice constant of 6.66 Å from the XRD θ–2θ scan and the characteristic in plane stretching vibration at 1370.5 cm‑1 from Raman spectroscopy. X-ray photoelectron spectroscopy analysis confirmed the formation of stoichiometric hBN films with excellent uniformity.

  14. Element discrimination in a hexagonal boron nitride nanosheet by aberration corrected transmission electron microscopy.

    PubMed

    Mitome, Masanori; Sawada, Hidetaka; Kondo, Yukihito; Tanishiro, Yasumasa; Takayanagi, Kunio

    2012-11-01

    Boron nitride nanosheets prepared by an exfoliation technique were observed by aberration corrected transmission electron microscopy at 300 kV acceleration voltage. Single boron and nitrogen atoms in a monolayer region were imaged with different image contrast; a boron atom gave 16% less intensity reduction than a nitrogen atom. The number of atoms at each hexagonal ring site was determined by the image intensity that changed discretely with a 0.25-0.30 intensity difference. A double BN sheet was found to have a boron vacancy layer, and a triple BN layer has also a boron deficient layer on the incident surface resulting from the electron beam thinning process. The high sensitivity for atomic species was achieved by the high resolution and a small information limit due to the use of a cold field emission electron source.

  15. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  16. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  17. Controllable synthesis of few-layered and hierarchically porous boron nitride nanosheets.

    PubMed

    Xiao, Feng; Chen, Zhixin; Casillas, Gilberto; Richardson, Christopher; Li, Huijun; Huang, Zhenguo

    2016-03-11

    Few-layered porous boron nitride nanosheets (BNNS) have been prepared using a dynamic magnesium diboride (MgB2) template and ammonium chloride (NH4Cl) etchant. Magnesium-based intermediates serve as layer separators in the synthesis and prevent extensive aggregation, resulting in few-layered BNNS. The resultant BNNS are hierarchically porous and show good CO2/N2 adsorption selectivity.

  18. Polymer/boron nitride nanocomposite materials for superior thermal transport performance.

    PubMed

    Song, Wei-Li; Wang, Ping; Cao, Li; Anderson, Ankoma; Meziani, Mohammed J; Farr, Andrew J; Sun, Ya-Ping

    2012-06-25

    Boron nitride nanosheets were dispersed in polymers to give composite films with excellent thermal transport performances approaching the record values found in polymer/graphene nanocomposites. Similarly high performance at lower BN loadings was achieved by aligning the nanosheets in poly(vinyl alcohol) matrix by simple mechanical stretching (see picture).

  19. Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots.

    PubMed

    Lee, Chee Huei; Qin, Shengyong; Savaikar, Madhusudan A; Wang, Jiesheng; Hao, Boyi; Zhang, Dongyan; Banyai, Douglas; Jaszczak, John A; Clark, Kendal W; Idrobo, Juan-Carlos; Li, An-Ping; Yap, Yoke Khin

    2013-09-06

    One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

  20. Large scale boron carbon nitride nanosheets with enhanced lithium storage capabilities.

    PubMed

    Lei, Weiwei; Qin, Si; Liu, Dan; Portehault, David; Liu, Zongwen; Chen, Ying

    2013-01-14

    Few-layered boron carbon nitride nanosheets are synthesized by a simple and environmentally friendly process. The BCN nanosheets have 2-6 atomic layers with high surface area and show enhanced storage performance in lithium batteries, as well as a stable capacity of ~100 mA h g(-1) at 2 A g(-1) for 5000 cycles.

  1. Multimodal luminescent-magnetic boron nitride nanotubes@NaGdF₄:Eu structures for cancer therapy.

    PubMed

    Li, Xia; Hanagata, Nobutaka; Wang, Xuebin; Yamaguchi, Maho; Yi, Wei; Bando, Yoshio; Golberg, Dmitri

    2014-04-28

    Boron nitride nanotubes@NaGdF4:Eu composites with core@shell structures were fabricated giving the opportunity to trace, target and thus to manipulate BNNTs in vitro. The composites show a significantly higher cellular uptake and chemotherapy drug intracellular delivery ability in the presence of an external magnetic field than that in its absence.

  2. Topological phase transition in hexagonal boron-nitride bilayers modulated by gate voltage

    NASA Astrophysics Data System (ADS)

    Jin, Guojun; Zhai, Xuechao

    2013-03-01

    We study the gate-voltage modulated electronic properties of hexagonal boron-nitride bilayers with two different stacking structures in the presence of intrinsic and Rashba spin-orbit interactions. Our analytical results show that there are striking cooperation effects arising from the spin-orbit interactions and the interlayer bias voltage. For realizing topological phase transition, in contrast to a gated graphene bilayer for increasing its energy gap, the energy gap of a boron-nitride bilayer is significantly reduced by an applied gate voltage. For the AA stacking-bilayer which has the inversion symmetry, a strong topological phase is found, and there is an interesting reentrant behavior from a normal phase to a topological phase and then to a normal phase again, characterized by the topological index. Therefore, the gate voltage modulated AA-boron nitride bilayer can be taken as a newcomer of the topological insulator family. For the AB stacking-bilayer which is lack of the inversion symmetry, it is always topologically trivial, but exhibits an unusual quantum Hall phase with four degenerate low-energy states localized at a single edge. It is suggested that these theoretical findings could be verified experimentally in the transport properties of boron-nitride bylayers. This research was supported by the NSFC (Nos. 60876065, 11074108), PAPD, and NBRPC (Nos. 2009CB929504, 2011CB922102).

  3. Synthesis and radiation response of BCON: a graphene oxide and hexagonal boron nitride hybrid

    NASA Astrophysics Data System (ADS)

    Bhimanapati, Ganesh R.; Wetherington, Maxwell; Mahabir, Shawn; Robinson, Joshua A.

    2016-06-01

    Since graphene, there has been a focus on several two-dimensional material systems (e.g. boron nitride, borocarbon nitride (BCN), transition-metal dichalcogenides) that provide an even wider array of unique chemistries and properties to explore future applications. Specifically, tailoring graphene/boron nitride heterostructures—which can theoretically retain the character of a single-atom thick sheet, withstand large physical strains, are easily functionalized, and have entirely different optical and mechanical properties compared to graphene—can provide the foundation for entirely new research avenues. In recent years, it has been shown that because of the similar crystal structure, carbon, boron, and nitrogen can co-exist as atomic sheets in a layered structure. We have developed a facile method of integrating boron nitride (hBN) and graphene oxide (GO) via chemical exfoliation which we refer to as BCON. The study of the stability of this material at different pH conditions indicates a stable and a uniform solution is achievable at pH 4-8. X-Ray Photoelectron Spectroscopy helped to identify the new bonds which indicated the formation of BCON linkage. Further, an in situ XPS technique was used to understand the chemical changes while exposing it to ionization radiation specially focusing on the C/O ratio. It was observed that even with a very low energy source, this material is highly sensitive to ionizing radiation, such as neutron, alpha and beta particles.

  4. Boron nitride nanotubes functionalized with mesoporous silica for intracellular delivery of chemotherapy drugs.

    PubMed

    Li, Xia; Zhi, Chunyi; Hanagata, Nobutaka; Yamaguchi, Maho; Bando, Yoshio; Golberg, Dmitri

    2013-08-25

    Boron nitride nanotube (BNNT)@mesoporous silica hybrids with controllable surface zeta potential were fabricated for intracellular delivery of doxorubicin. The materials showed higher suspension ability, doxorubicin intracellular endocytosis efficiency, and LNcap prostate cancer cell killing ability compared with naked BNNTs.

  5. Comment on ‘Molecular structure-dependent deformations in boron nitride nanostructures subject to an electrical field’

    NASA Astrophysics Data System (ADS)

    Masoud Seyyed Fakhrabadi, Mir

    2016-03-01

    The nanomechanical deformation and buckling characteristics of boron nitride nanostructures including boron nitride nanotubes and sheets under an external electric field were analyzed in Zhang et al (2013 J. Phys. D: Appl. Phys. 46 235303). A mistake in the consideration of the type of chemical bond between boron and nitride atoms was made that affected the reported results. The authors considered the bond between the atoms ionic but they actually bond to each other via covalent bonds. In this comment, the mentioned problem is going to be discussed and its effects on the final results are to be analyzed.

  6. Quantifying the Solubility of Boron Nitride Nanotubes and Sheets with Static Light Scattering and Refractometry

    SciTech Connect

    Mutz, M; Eastwood, Eric Allen; Dadmun, Mark D

    2013-01-01

    The dissolution of nanoparticles, particularly those containing boron, is an important area of interest for polymer nanocomposite formation and material development. In this work, the solubility of boron nitride nanotubes (BNNT), functionalized boron nitride nanotubes (FBNNT), and boron nitride sheets (BNZG) is quantified in toluene and THF with static light scattering, refractometry, UV vis spectroscopy, and physical observations. UV vis spectroscopy provides a method to determine the concentration and solubility limits of the solutions tested. Using light scattering, the second virial coefficient, A2, is determined and used to calculate , the solute solvent interaction parameter. The Hildebrand solubility parameter, , is then extracted from this data using the Hildebrand Scatchard Solution Theory. A list of potential good solvents based on the estimated value is provided for each nanoparticle. Single-walled carbon nanotubes (SWNTs) and prepolymers (EN4 and EN8) used to synthesize polyurethanes were also tested, because the published and molar attraction constants of these materials provided a selfconsistent check. The dn/dc of SWNTs and boron-containing particles was measured for the first time in this work. A solvent screen for BN-ZG provides additional information that supports the obtained and . Three systems were found to have values below 0.5 and were thermodynamically soluble: BNNT in THF, EN8 in THF, and EN8 in toluene.

  7. Synergistic Behavior of Tubes, Junctions, and Sheets Imparts Mechano-Mutable Functionality in 3D Porous Boron Nitride Nanostructures.

    PubMed

    Sakhavand, Navid; Shahsavari, Rouzbeh

    2014-10-02

    One-dimensional (1D) boron nitride nanotube (BNNT) and 2D hexagonal BN (h-BN) are attractive for demonstrating fundamental physics and promising applications in nano-/microscale devices. However, there is a high anisotropy associated with these BN allotropes as their excellent properties are either along the tube axis or in-plane directions, posing an obstacle in their widespread use in technological and industrial applications. Herein, we report a series of 3D BN prototypes, namely, pillared boron nitride (PBN), by fusing single-wall BNNT and monolayer h-BN aimed at filling this gap. We use density functional theory and molecular dynamics simulations to probe the diverse mechano-mutable properties of PBN prototypes. Our results demonstrate that the synergistic effect of the tubes, junctions, and sheets imparts cooperative deformation mechanisms, which overcome the intrinsic limitations of the PBN constituents and provide a number of superior characteristics including 3D balance of strength and toughness, emergence of negative Poisson's ratio, and elimination of strain softening along the armchair orientation. These features, combined with the ultrahigh surface area and lightweight structure, render PBN as a 3D multifunctional template for applications in graphene-based nanoelectronics, optoelectronics, gas storage, and functional composites with fascinating in-plane and out-of-plane tailorable properties.

  8. Synergistic Behavior of Tubes, Junctions, and Sheets Imparts Mechano-Mutable Functionality in 3D Porous Boron Nitride Nanostructures

    PubMed Central

    2015-01-01

    One-dimensional (1D) boron nitride nanotube (BNNT) and 2D hexagonal BN (h-BN) are attractive for demonstrating fundamental physics and promising applications in nano-/microscale devices. However, there is a high anisotropy associated with these BN allotropes as their excellent properties are either along the tube axis or in-plane directions, posing an obstacle in their widespread use in technological and industrial applications. Herein, we report a series of 3D BN prototypes, namely, pillared boron nitride (PBN), by fusing single-wall BNNT and monolayer h-BN aimed at filling this gap. We use density functional theory and molecular dynamics simulations to probe the diverse mechano-mutable properties of PBN prototypes. Our results demonstrate that the synergistic effect of the tubes, junctions, and sheets imparts cooperative deformation mechanisms, which overcome the intrinsic limitations of the PBN constituents and provide a number of superior characteristics including 3D balance of strength and toughness, emergence of negative Poisson’s ratio, and elimination of strain softening along the armchair orientation. These features, combined with the ultrahigh surface area and lightweight structure, render PBN as a 3D multifunctional template for applications in graphene-based nanoelectronics, optoelectronics, gas storage, and functional composites with fascinating in-plane and out-of-plane tailorable properties. PMID:25289114

  9. Effect of heat conditions on the mechanical properties of boron nitride polycrystals

    SciTech Connect

    Bochko, A.V.

    1986-04-01

    This paper examines the effect of various types of heat treatment on the mechanical and service properties of polycrystals of boron nitride. Quantitative phase analysis was carried out using the methods described when using a DRON-2.0 x-ray diffractometer. The mechanical characteristics were determined by the method of local loading using the standard nitride polycrystals in the initial state are quite high. On the basis of the results it may be concluded that the heat treatment conditions examined (annealing, hf heating, annealing and hf heating) lead to the same changes in the structural state as those taking place in thermal cycling thus causing the corresponding reduction of the level of the strength properties of the boron nitride polycrystals.

  10. Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substrates.

    PubMed

    Hite, Jennifer K; Robinson, Zachary R; Eddy, Charles R; Feigelson, Boris N

    2015-07-22

    Hexagonal boron nitride (h-BN) is an important material for the development of new 2D heterostructures. To enable this development, the relationship between crystal growth and the substrate orientation must be explored and understood. In this study, we simultaneously grew h-BN on different orientations of Cu substrates to establish the impact of substrate structure on the growth habit of thin h-BN layers. The substrates studied were a polycrystalline Cu foil, Cu(100), Cu(110), and Cu(111). Fourier transform grazing-incidence infrared reflection absorption spectroscopy (FT-IRRAS) was used to identify h-BN on copper substrates. X-ray photoelectron spectroscopy (XPS) was used to determine the effective thickness of the h-BN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) were used to measure the morphology of the films and postgrowth crystal structure of the Cu substrates, respectively. Combining the SEM and EBSD images allowed for the correlation between h-BN film coverage and the crystal structure of Cu. It was found that the growth rate was inversely proportional to the surface free energy of the Cu surface, with Cu(111) having the most h-BN surface coverage. The Cu foil predominately crystallized with a (100) surface orientation, and likewise had a film coverage very close to the Cu(100).

  11. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

    PubMed

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S; Korolkov, Vladimir V; Cho, YongJin; Mellor, Christopher J; Foxon, C Thomas; Khlobystov, Andrei N; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V; Beton, Peter H

    2016-03-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene.

  12. Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene

    PubMed Central

    Shautsova, Viktoryia; Gilbertson, Adam M.; Black, Nicola C. G.; Maier, Stefan A.; Cohen, Lesley F.

    2016-01-01

    We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping. PMID:27443219

  13. One-Step Synthesis of Boron Nitride Quantum Dots: Simple Chemistry Meets Delicate Nanotechnology.

    PubMed

    Liu, Bingping; Yan, Shihai; Song, Zhongqian; Liu, Mengli; Ji, Xuqiang; Yang, Wenrong; Liu, Jingquan

    2016-12-23

    Herein, a conceptually new and straightforward aqueous route is described for the synthesis of hydroxyl- and amino-functionalized boron nitride quantum dots (BNQDs) with quantum yields (QY) as high as 18.3 % by using a facile bottom-up approach, in which a mixture of boric acid and ammonia solution was hydrothermally treated in one pot at 200 °C for 12 h. The functionalized BNQDs, with excellent photoluminescence properties, could be easily dispersed in an aqueous medium and applied as fluorescent probes for the detection of ferrous (Fe(2+) ) and ferric (Fe(3+) ) ions with excellent selectivity and low detection limits. The mechanisms for the hydrothermal reaction and fluorescence quenching were also simulated by using density functional theory (DFT), which confirmed the feasibility and advantages of this strategy. It provides a scalable and eco-friendly method for preparation of BNQDs with good dispersability and could also be generalized to the synthesis of other 2D quantum dots and nanoplates.

  14. Elastic and Piezoelectric Properties of Boron Nitride Nanotube Composites. Part II; Finite Element Model

    NASA Technical Reports Server (NTRS)

    Kim, H. Alicia; Hardie, Robert; Yamakov, Vesselin; Park, Cheol

    2015-01-01

    This paper is the second part of a two-part series where the first part presents a molecular dynamics model of a single Boron Nitride Nanotube (BNNT) and this paper scales up to multiple BNNTs in a polymer matrix. This paper presents finite element (FE) models to investigate the effective elastic and piezoelectric properties of (BNNT) nanocomposites. The nanocomposites studied in this paper are thin films of polymer matrix with aligned co-planar BNNTs. The FE modelling approach provides a computationally efficient way to gain an understanding of the material properties. We examine several FE models to identify the most suitable models and investigate the effective properties with respect to the BNNT volume fraction and the number of nanotube walls. The FE models are constructed to represent aligned and randomly distributed BNNTs in a matrix of resin using 2D and 3D hollow and 3D filled cylinders. The homogenisation approach is employed to determine the overall elastic and piezoelectric constants for a range of volume fractions. These models are compared with an analytical model based on Mori-Tanaka formulation suitable for finite length cylindrical inclusions. The model applies to primarily single-wall BNNTs but is also extended to multi-wall BNNTs, for which preliminary results will be presented. Results from the Part 1 of this series can help to establish a constitutive relationship for input into the finite element model to enable the modeling of multiple BNNTs in a polymer matrix.

  15. Electrical spin injection into graphene through hexagonal boron nitride tunnel barrier

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Takehiro; Inoue, Yoshihisa; Masubuchi, Satoru; Morikawa, Sei; Onuki, Masahiro; Watanabe, Kenji; Taniguchi, Takashi; Moriya, Rai; Machida, Tomoki

    2014-03-01

    Two-dimensional crystals such as graphene, h-BN, and transition metal dichalcogenides are emergent material system and receiving much attention for spintronics applications. Particularly, these 2D crystals have significant advantages when they are used as a tunnel barrier. 1) These materials can be exfoliated with a monolayer thick resolution. 2) A single-crystalline flake can be fabricated. 3) A wide range of band gaps are available. However, up to now, spin polarized tunneling through these materials has not been fully explored experimentally. Here, we demonstrate spin polarized tunneling through one monolayer thick of hexagonal boron nitride (h-BN) layer and used it for electrical spin injection into graphene. A NiFe/ML h-BN/bilayer graphene/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. I-V curve across h-BN exhibits non-linear characteristics and suggests the successful fabrication of tunnel barrier. A spin signal is observed in non-local magnetoresistance measurement. Spin diffusion constant and spin relaxation time are obtained from the Hanle measurement.

  16. Folate Functionalized Boron Nitride Nanotubes and their Selective Uptake by Glioblastoma Multiforme Cells: Implications for their Use as Boron Carriers in Clinical Boron Neutron Capture Therapy

    NASA Astrophysics Data System (ADS)

    Ciofani, Gianni; Raffa, Vittoria; Menciassi, Arianna; Cuschieri, Alfred

    2009-02-01

    Boron neutron capture therapy (BNCT) is increasingly being used in the treatment of several aggressive cancers, including cerebral glioblastoma multiforme. The main requirement for this therapy is selective targeting of tumor cells by sufficient quantities of 10B atoms required for their capture/irradiation with low-energy thermal neutrons. The low content of boron targeting species in glioblastoma multiforme accounts for the difficulty in selective targeting of this very malignant cerebral tumor by this radiation modality. In the present study, we have used for the first time boron nitride nanotubes as carriers of boron atoms to overcome this problem and enhance the selective targeting and ablative efficacy of BNCT for these tumors. Following their dispersion in aqueous solution by noncovalent coating with biocompatible poly- l-lysine solutions, boron nitride nanotubes were functionalized with a fluorescent probe (quantum dots) to enable their tracking and with folic acid as selective tumor targeting ligand. Initial in vitro studies have confirmed substantive and selective uptake of these nanovectors by glioblastoma multiforme cells, an observation which confirms their potential clinical application for BNCT therapy for these malignant cerebral tumors.

  17. Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

    PubMed

    Wen, Yao; Shang, Xunzhong; Dong, Ji; Xu, Kai; He, Jun; Jiang, Chao

    2015-07-10

    Atomically thin hexagonal boron nitride (h-BN) has been demonstrated to be an excellent dielectric layer as well as an ideal van der Waals epitaxial substrate for fabrication of two-dimensional (2D) atomic layers and their vertical heterostructures. Although many groups have obtained large-scale monolayer h-BN through low pressure chemical vapor deposition (LPCVD), it is still a challenge to grow clean monolayers without the reduction of domain size. Here we report the synthesis of large-area (4 × 2 cm(2)) high quality monolayer h-BN with an ultraclean and unbroken surface on copper foil by using LPCVD. A detailed investigation of the key factors affecting growth and transfer of the monolayer was carried out in order to eliminate the adverse effects of impurity particles. Furthermore, an optimized transfer approach allowed the nondestructive and clean transfer of the monolayer from copper foil onto an arbitrary substrate, including a flexible substrate, under mild conditions. Atomic force microscopy indicated that the root-mean-square (RMS) roughness of the monolayer h-BN on SiO2 was less than 0.269 nm for areas with fewer wrinkles. Selective area electron diffraction analysis of the h-BN revealed a pattern of hexagonal diffraction spots, which unambiguously demonstrated its highly crystalline character. Our work paves the way toward the use of ultraclean and large-area monolayer h-BN as the dielectric layer in the fabrication of high performance electronic and optoelectronic devices for novel 2D atomic layer materials.

  18. Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wen, Yao; Shang, Xunzhong; Dong, Ji; Xu, Kai; He, Jun; Jiang, Chao

    2015-07-01

    Atomically thin hexagonal boron nitride (h-BN) has been demonstrated to be an excellent dielectric layer as well as an ideal van der Waals epitaxial substrate for fabrication of two-dimensional (2D) atomic layers and their vertical heterostructures. Although many groups have obtained large-scale monolayer h-BN through low pressure chemical vapor deposition (LPCVD), it is still a challenge to grow clean monolayers without the reduction of domain size. Here we report the synthesis of large-area (4 × 2 cm2) high quality monolayer h-BN with an ultraclean and unbroken surface on copper foil by using LPCVD. A detailed investigation of the key factors affecting growth and transfer of the monolayer was carried out in order to eliminate the adverse effects of impurity particles. Furthermore, an optimized transfer approach allowed the nondestructive and clean transfer of the monolayer from copper foil onto an arbitrary substrate, including a flexible substrate, under mild conditions. Atomic force microscopy indicated that the root-mean-square (RMS) roughness of the monolayer h-BN on SiO2 was less than 0.269 nm for areas with fewer wrinkles. Selective area electron diffraction analysis of the h-BN revealed a pattern of hexagonal diffraction spots, which unambiguously demonstrated its highly crystalline character. Our work paves the way toward the use of ultraclean and large-area monolayer h-BN as the dielectric layer in the fabrication of high performance electronic and optoelectronic devices for novel 2D atomic layer materials.

  19. High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

    NASA Technical Reports Server (NTRS)

    Kang, Jin Ho (Inventor); Park, Cheol (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Lowther, Sharon E. (Inventor); Bryant, Robert George (Inventor)

    2015-01-01

    Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

  20. Nucleation Control for Large, Single Crystalline Domains of Monolayer Hexagonal Boron Nitride via Si-Doped Fe Catalysts

    PubMed Central

    2015-01-01

    The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials. PMID:25664483

  1. Single crystal diamond boron 'delta doped' nanometric layers for 2D electronic devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Butler, James

    2016-10-01

    Use of diamond as a semiconductor material suffers from the high activation energy of all known impurity dopants (0.37 eV for Boron, 0.6 eV for Phosphorous). To achieve the simultaneous carrier concentration and mobility desired for devices operating at room temperature, growth of a nanometric thick `delta' layer doped to above the metal insulator transition adjacent to high mobility intrinsic material can provide a 2D high mobility conduction layer. Critical to obtaining the enhanced mobility of the carriers in the layer next to the `delta' doped layer is the abruptness of the doping interface. Single and multiple nanometer thick epitaxial layers of heavily boron `delta' doped diamond have been grown on high quality, intrinsic lab grown diamond single crystals. These layers were grown in a custom microwave plasma activated chemical vapor deposition reactor based on a rapid reactant switching technique. Characterization of the `delta' layers by various analytical techniques will be presented. Electrical measurements demonstrating enhanced hole mobility (100 to 800 cm2/V sec) as well as other electrical characterizations will be presented.

  2. Effect of Low-Energy Ions on Plasma-Enhanced Deposition of Cubic Boron Nitride

    NASA Astrophysics Data System (ADS)

    Torigoe, M.; Fukui, S.; Teii, K.; Matsumoto, S.

    2015-09-01

    The effect of low-energy ions on deposition of cubic boron nitride (cBN) films in an inductively coupled plasma with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where sp2-bonded BN phase only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are estimated in the range of a few eV to 35 eV and 100 to 130, respectively. The impact of negative ions is presumed to be negligible due to their low kinetic energy relative to the sheath potential over the substrate surface. The impact of positive ions with high ion to boron flux ratios is primarily responsible for reduction of the ion energy for cBN film deposition. Work supported in part by a Grant-in-Aid for Scientific Research (B), a Funding Program for Next Generation World-Leading Researchers, and an Industrial Technology Research Grant Program 2008.

  3. Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

    NASA Astrophysics Data System (ADS)

    Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Yamamoto, Hideki; Kumakura, Kazuhide

    2017-03-01

    Cubic boron nitride (c-BN) films were grown on diamond (001) substrates by a new ion-beam-assisted molecular-beam-epitaxy (MBE) method with the irradiation of Ar+ ions and atomic nitrogen radicals (N*). From X-ray diffraction and cross-sectional transmission electron microscopy images, we confirmed the heteroepitaxial growth of single-domain c-BN(001) films on the diamond (001) substrates. Additionally, we revealed the growth phase diagram of BN films in the ion-beam-assisted MBE. This diagram indicates that the flux intensity of Ar+ ions should be higher than that of boron atoms for epitaxial c-BN growth.

  4. Water-assisted chemical vapor deposition synthesis of boron nitride nanotubes and their photoluminescence property

    NASA Astrophysics Data System (ADS)

    Li, Juan; Li, Jianbao; Yin, Yanchun; Chen, Yongjun; Bi, Xiaofan

    2013-09-01

    A novel water-assisted chemical vapor deposition (CVD) method for the efficient synthesis of boron nitride (BN) nanotubes is demonstrated. The replacement of metal oxide by water vapor could continuously generate intermediate boron oxide vapor and enhance the production of BN nanotubes. The nanotubes synthesized when an appropriate amount of water vapor was introduced had an average diameter of about 80 nm and lengths of several hundred μm. The diameter and yield of nanotubes could be controlled by tuning the amount of water vapor. This simple water-assisted CVD approach paves a new path to the fabrication of BN nanotubes in large quantities.

  5. A novel single-source precursor for collapsed boron nitride nanotubes with high hydrogen storage capacity

    NASA Astrophysics Data System (ADS)

    Li, Jie; Dai, Wei; Chen, Muqing; Wu, Tian

    An efficient chemical vapor deposition (CVD) method was successfully utilized to synthesize boron nitride nanotubes (BNNTs), where Ammonium boron trifluoride (NH3BF3) and MgCl2 were employed as the novel single-source precursor and the promoter, respectively. The as-obtained BNNTs displayed a collapsed structure with the average diameter of 15nm and lengths up to tens of micrometers, named as collapsed BNNTs. They exhibited a reproducible hydrogen storage capacity of 2.63wt.% under 10 MPa and at ambient temperature. Moreover, they showed an high storage cycling stability due to the excellent chemical and structural stability.

  6. Water-assisted chemical vapor deposition synthesis of boron nitride nanotubes and their photoluminescence property.

    PubMed

    Li, Juan; Li, Jianbao; Yin, Yanchun; Chen, Yongjun; Bi, Xiaofan

    2013-09-13

    A novel water-assisted chemical vapor deposition (CVD) method for the efficient synthesis of boron nitride (BN) nanotubes is demonstrated. The replacement of metal oxide by water vapor could continuously generate intermediate boron oxide vapor and enhance the production of BN nanotubes. The nanotubes synthesized when an appropriate amount of water vapor was introduced had an average diameter of about 80 nm and lengths of several hundred μm. The diameter and yield of nanotubes could be controlled by tuning the amount of water vapor. This simple water-assisted CVD approach paves a new path to the fabrication of BN nanotubes in large quantities.

  7. High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

    SciTech Connect

    Qian, J. C.; Jha, S. K. E-mail: apwjzh@cityu.edu.hk; Wang, B. Q.; Jelenković, E. V.; Bello, I.; Klemberg-Sapieha, J. E.; Martinu, L.; Zhang, W. J. E-mail: apwjzh@cityu.edu.hk

    2014-11-10

    Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

  8. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

    PubMed

    Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe; Kalanyan, Berc; Bhimanapati, Ganesh R; Eichfeld, Sarah M; Burke, Robert A; Shah, Pankaj B; O'Regan, Terrance P; Crowne, Frank J; Birdwell, A Glen; Robinson, Joshua A; Davydov, Albert V; Ivanov, Tony G

    2016-03-22

    When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm(2) and current spreading in the MoS2 monolayer of approximately 1 μm in diameter.

  9. Marine corrosion protective coatings of hexagonal boron nitride thin films on stainless steel.

    PubMed

    Husain, Esam; Narayanan, Tharangattu N; Taha-Tijerina, Jose Jaime; Vinod, Soumya; Vajtai, Robert; Ajayan, Pulickel M

    2013-05-22

    Recently, two-dimensional, layered materials such as graphene and hexagonal boron nitride (h-BN) have been identified as interesting materials for a range of applications. Here, we demonstrate the corrosion prevention applications of h-BN in marine coatings. The performance of h-BN/polymer hybrid coatings, applied on stainless steel, were evaluated using electrochemical techniques in simulated seawater media [marine media]. h-BN/polymer coating shows an efficient corrosion protection with a low corrosion current density of 5.14 × 10(-8) A/cm(2) and corrosion rate of 1.19 × 10(-3) mm/year and it is attributed to the hydrofobic, inert and dielectric nature of boron nitride. The results indicated that the stainless steel with coatings exhibited improved corrosion resistance. Electrochemical impedance spectroscopy and potentiodynamic analysis were used to propose a mechanism for the increased corrosion resistance of h-BN coatings.

  10. The electronic transport behavior of hybridized zigzag graphene and boron nitride nanoribbons

    SciTech Connect

    Zhou, Yuhong; Zhang, Jianbing; Miao, Xiangshui; Zhang, Daoli; Ye, Cong

    2014-03-21

    In this present work, we have investigated the electronic transport properties of the hybridized structure constructed by the zigzag graphene and boron-nitride (BN) nanoribbons (Z-B{sub n}N{sub m}C{sub p}, n + m + p = 16) through employing nonequilibrium Green's functions in combination with the density-functional theory. The results demonstrate that the electronic transport properties of the hybridized Z-B{sub n}N{sub m}C{sub p} nanoribbons are strongly dependent on the width of boron-nitride or graphene nanoribbons. When the numbers of n and m are not equal, the negative differential resistance behavior is observed, which can be modulated by varying the width of BN nanoribbons. The conductance of the hybridized Z-B{sub n}N{sub m}C{sub p} nanoribbons with odd numbers of zigzag carbon chains also increases by the width of BN nanoribbons.

  11. Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging and focusing.

    PubMed

    Li, Peining; Lewin, Martin; Kretinin, Andrey V; Caldwell, Joshua D; Novoselov, Kostya S; Taniguchi, Takashi; Watanabe, Kenji; Gaussmann, Fabian; Taubner, Thomas

    2015-06-26

    Hyperbolic materials exhibit sub-diffractional, highly directional, volume-confined polariton modes. Here we report that hyperbolic phonon polaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical applications, including unusual imaging phenomenon (such as an enlarged reconstruction of investigated objects) and sub-diffractional focusing. Both the enlarged imaging and the super-resolution focusing are explained based on the volume-confined, wavelength dependent propagation angle of hyperbolic phonon polaritons. With advanced infrared nanoimaging techniques and state-of-art mid-infrared laser sources, we have succeeded in demonstrating and visualizing these unexpected phenomena in both Type I and Type II hyperbolic conditions, with both occurring naturally within hexagonal boron nitride. These efforts have provided a full and intuitive physical picture for the understanding of the role of hyperbolic phonon polaritons in near-field optical imaging, guiding, and focusing applications.

  12. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

    SciTech Connect

    Muramatsu, Y.; Grush, M.; Callcott, T.A.

    1997-04-01

    Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called {open_quotes}super diamond,{close_quotes} and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods.

  13. Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate

    NASA Astrophysics Data System (ADS)

    Bischoff, D.; Krähenmann, T.; Dröscher, S.; Gruner, M. A.; Barraud, C.; Ihn, T.; Ensslin, K.

    2012-11-01

    We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive-ion-etched graphene nanodevices.

  14. Ultrafast optical nonlinearity and photoacoustic studies on chitosan-boron nitride nanotube composite films

    NASA Astrophysics Data System (ADS)

    Kuthirummal, Narayanan; Philip, Reji; Mohan, Athira; Jenks, Cassidy; Levi-Polyachenko, Nicole

    2016-07-01

    Ultrafast optical nonlinearity in chitosan (CS) films doped with multi-walled boron nitride nanotubes (MWBN) has been investigated using 800 nm, 100 fs laser pulses, employing the open aperture Z-scan technique. Two-photon absorption coefficients (β) of CS-MWBN films have been measured at 800 nm by Z-scan. While chitosan with 0.01% MWBN doping gives a β value of 0.28×10-13 m/W, 1% doping results in a higher β value of 1.43×10-13 m/W, showing nonlinearity enhancement by a factor of 5. These nonlinearity coefficients are comparable to those reported for silver nanoclusters in glass matrix and Pt-PVA nanocomposites, indicating potential photonic applications for MWBN doped chitosan films. Characterization of the synthesized films using Fourier transform infrared photoacoustic spectroscopy (FTIR-PAS) reveals significant interactions between the NH and CO groups of chitosan with boron nitride.

  15. Method and device to synthesize boron nitride nanotubes and related nanoparticles

    DOEpatents

    Zettl, Alexander K.

    2016-07-19

    Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

  16. Phonon symmetries in hexagonal boron nitride probed by incoherent light emission

    NASA Astrophysics Data System (ADS)

    Vuong, T. Q. P.; Cassabois, G.; Valvin, P.; Jacques, V.; Van Der Lee, A.; Zobelli, A.; Watanabe, K.; Taniguchi, T.; Gil, B.

    2017-03-01

    Layered compounds are stacks of weakly bound two-dimensional atomic crystals, with a prototypal hexagonal structure in graphene, transition metal dichalcogenides and boron nitride. This crystalline anisotropy results in vibrational modes with specific symmetries depending on the in-plane or out-of-plane atomic displacements. We show that polarization-resolved photoluminescence measurements in hexagonal boron nitride reflect the phonon symmetries in this layered semiconductor. Experiments performed with a detection on the sample edge, perpendicular to the c-axis, reveal the strong polarization-dependence of the emission lines corresponding to the recombination assisted by the three acoustic phonon modes. We elucidate the dipole orientation of the fundamental indirect exciton. We demonstrate evidence of the so-far missing phonon replica due to the optical out-of-plane phonon mode.

  17. Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

    SciTech Connect

    Dauber, Jan; Stampfer, Christoph; Sagade, Abhay A.; Neumaier, Daniel; Oellers, Martin; Watanabe, Kenji; Taniguchi, Takashi

    2015-05-11

    The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/√(Hz) making our graphene sensors highly interesting for industrial applications.

  18. Biophysical response of living cells to boron nitride nanoparticles: uptake mechanism and bio-mechanical characterization

    NASA Astrophysics Data System (ADS)

    Rasel, Md. Alim Iftekhar; Li, Tong; Nguyen, Trung Dung; Singh, Sanjleena; Zhou, Yinghong; Xiao, Yin; Gu, YuanTong

    2015-11-01

    Boron nitride nanomaterials have attracted significant interest due to their superior chemical and physical properties. Despite these novel properties, investigation on the interaction between boron nitride nanoparticle (BN NP) and living systems has been limited. In this study, BN NP (100-250 nm) is assessed as a promising biomaterial for medical applications. The toxicity of BN NP is evaluated by assessing the cells behaviours both biologically (MTT assay, ROS detection etc.) and physically (atomic force microscopy). The uptake mechanism of BN NP is studied by analysing the alternations in cellular morphology based on cell imaging techniques. The results demonstrate in vitro cytocompatibility of BN NP with immense potential for use as an effective nanoparticle for various bio-medical applications.

  19. Enhanced thermal-mechanical properties of polymer composites with hybrid boron nitride nanofillers

    NASA Astrophysics Data System (ADS)

    Yan, Haiyan; Tang, Yanxia; Su, Juling; Yang, Xiaoyan

    2014-02-01

    The present work focuses on the investigation of the thermal-mechanical properties of the epoxy composites with hybrid boron nitride nanotubes (BNNTs) and boron nitride nanosheets (BNNSs). The stable dispersions of BNNTs-BNNSs were achieved by a noncovalent functionalization with pyrene carboxylic acid. The resulting epoxy/BNNTs-BNNSs composites exhibited homogeneously dispersed BNNTs-BNNSs and a strong filler-matrix interface interaction. The composites showed a 95 % increase in thermal conductivity and a 57 % improvement in Young's modulus by addition of only 1 vol. % BNNTs-BNNSs. Meanwhile, the composites also retained a high electrical resistance of pure epoxy. Our study thus shows the potential for hybrid BNNTs-BNNSs to be successfully used as the nanofillers of polymer composites for applications in electrically insulating thermal interface materials.

  20. A quantum chemistry study of curvature effects on boron nitride nanotubes/nanosheets for gas adsorption.

    PubMed

    Sha, Haoyan; Faller, Roland

    2016-07-20

    Quantum chemistry calculations were performed to investigate the effect of the surface curvature of a Boron Nitride (BN) nanotube/nanosheet on gas adsorption. Curved boron nitride layers with different curvatures interacting with a number of different gases including noble gases, oxygen, and water on both their convex and concave sides of the surface were studied using density functional theory (DFT) with a high level dispersion corrected functional. Potential energy surfaces of the gas molecules interacting with the selected BN surfaces were investigated. In addition, the charge distribution and electrostatic potential contour of the selected BN surfaces are discussed. The results reveal how the curvature of the BN surfaces affects gas adsorption. In particular, small curvatures lead to a slight difference in the physisorption energy, while large curvatures present distinct potential energy surfaces, especially for the short-range repulsion.

  1. Ring State for Single Transition Metal Atoms on Boron Nitride on Rh(111)

    NASA Astrophysics Data System (ADS)

    Natterer, Fabian Donat; Patthey, François; Brune, Harald

    2012-08-01

    The low-temperature adsorption of isolated transition metal adatoms (Mn, Co, and Fe) onto hexagonal boron nitride monolayers on Rh(111) creates a bistable adsorption complex. The first state considerably weakens the hexagonal boron nitride- (h-BN-) substrate bond for 60 BN unit cells, leading to a highly symmetric ring in STM images, while the second state is imaged as a conventional adatom and leaves the BN-substrate interaction intact. We demonstrate reversible switching between the two states and, thus, controlled pinning and unpinning of the h-BN layer from the metal substrate. I(z) and dln⁡I/dz curves are used to reveal the BN deformation in the ring state.

  2. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    SciTech Connect

    Alam, M. T.; Haque, M. A.; Bresnehan, M. S.; Robinson, J. A.

    2014-01-06

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m{sup −1} K{sup −1}, is lower than the bulk basal plane value (390 W m{sup −1} K{sup −1}) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  3. Robustness of topologically protected transport in graphene-boron nitride lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Abergel, D. S. L.

    2017-02-01

    Previously, graphene nanoribbons set in lateral heterostructures with hexagonal boron nitride were predicted to support topologically protected states at low energy. We investigate how robust the transport properties of these states are against lattice disorder. We find that forms of disorder that do not couple the two valleys of the zigzag graphene nanoribbon do not impact the transport properties at low bias, indicating that these lateral heterostructures are very promising candidates for chip-scale conducting interconnects. Forms of disorder that do couple the two valleys, such as vacancies in the graphene ribbon, or substantial inclusions of armchair edges at the graphene-hexagonal boron nitride interface will negatively affect the transport. However, these forms of disorder are not commonly seen in current experiments.

  4. Resilience of thermal conductance in defected graphene, silicene, and boron nitride nanoribbons

    NASA Astrophysics Data System (ADS)

    Wirth, Luke J.; Osborn, Tim H.; Farajian, Amir A.

    2016-10-01

    Nanomaterials hold great promise for applications in thermal management and thermoelectric power generation. Defects are important as they can be either inevitably present during fabrication or intentionally introduced to engineer properties. Here, we investigate how thermal conductance responds to edge defects in narrow graphene, silicene, and boron nitride nanoribbons (NRs), from first principles using non-equilibrium Green's function method. Geometric distortions, phonon conductance coefficients, and local densities of states are analyzed. Hydrogen absences produce similar reductions in conductance in planar graphene and boron nitride NRs with larger reductions in buckled silicene NRs. Large atom vacancies affect all systems similarly. Emerging flexible and stiff scattering centers, depending on bond strengths, are shown to cause thermal conductance reduction. This knowledge suggests that inferences on unknown thermal properties of novel defected materials can be made based on understanding how thermal transport behaves in their analogues and how bond characteristics differ between the systems.

  5. Van der Waals heterostructure of phosphorene and hexagonal boron nitride: First-principles modeling

    NASA Astrophysics Data System (ADS)

    Peng, Zhang; Jing, Wang; Xiang-Mei, Duan

    2016-03-01

    We have studied the structural and electronic properties of a hybrid hexagonal boron nitride with phosphorene nanocomposite using ab initio density functional calculations. It is found that the interaction between the hexagonal boron nitride and phosphorene is dominated by the weak van der Waals interaction, with their own intrinsic electronic properties preserved. Furthermore, the band gap of the nanocomposite is dependent on the interfacial distance. Our results could shed light on the design of new devices based on van der Waals heterostructure. Projected supported by the National Natural Science Foundation of China (Grant No. 11574167), the New Century 151 Talents Project of Zhejiang Province,China, and the K. C. Wong Magna Foundation in Ningbo University, China.

  6. Well-orientated cubic boron nitride nanocrystals as studied by high-resolution transmission electron microscopy.

    PubMed

    Tsiaoussis, I; Frangis, N

    2006-09-01

    In a boron nitride thin film, grown on a Si (100) substrate by radio frequency magnetron sputtering, a striking nanostructure is observed by high-resolution transmission electron microscopy. It consists of cubic boron nitride nanocrystals with a rather good triangular shape, pointing always to the substrate. The nanocrystals are usually highly defected and present their own interesting internal structure. Texture formation is observed within a nanocrystal, with all the subgrains observed to have a common <011> axis, which is also approximately parallel to a <011> axis of the Si substrate, i.e. the nanocrystals are very well structurally orientated in relation to the Si substrate (self-organized). Dislocations and stacking faults are also found in the nanocrystals.

  7. High density hexagonal boron nitride prepared by hot isostatic pressing in refractory metal containers

    DOEpatents

    Hoenig, Clarence L.

    1992-01-01

    Boron nitride powder with less than or equal to the oxygen content of starting powder (down to 0.5% or less) is hot isostatically pressed in a refractory metal container to produce hexagonal boron nitride with a bulk density greater than 2.0 g/cc. The refractory metal container is formed of tantalum, niobium, tungsten, molybdenum or alloys thereof in the form of a canister or alternatively plasma sprayed or chemical vapor deposited onto a powder compact. Hot isostatic pressing at 1800.degree. C. and 30 KSI (206.8 MPa) argon pressure for four hours produces a bulk density of 2.21 g/cc. Complex shapes can be made.

  8. Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride

    SciTech Connect

    Cheng, Bin; Wang, Peng; Pan, Cheng; Miao, Tengfei; Wu, Yong; Lau, C. N.; Bockrath, M.; Taniguchi, T.; Watanabe, K.

    2015-07-20

    When graphene is placed on hexagonal boron nitride with a twist angle, new properties develop due to the resulting moiré superlattice. Here, we report a method using Raman spectroscopy to make rapid, non-destructive measurements of the twist angle between bilayer graphene and hexagonal boron nitride. The lattice orientation is determined by using flakes with both bilayer and monolayer regions, and using the known Raman signature for the monolayer to measure the twist angle of the entire flake. The widths of the second order Raman peaks are found to vary linearly in the superlattice period and are used to determine the twist angle. The results are confirmed by using transport measurements to infer the superlattice period by the charge density required to reach the secondary resistance peaks. Small twist angles are also found to produce a significant modification of the first order Raman G band peak.

  9. Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging and focusing

    PubMed Central

    Li, Peining; Lewin, Martin; Kretinin, Andrey V.; Caldwell, Joshua D.; Novoselov, Kostya S.; Taniguchi, Takashi; Watanabe, Kenji; Gaussmann, Fabian; Taubner, Thomas

    2015-01-01

    Hyperbolic materials exhibit sub-diffractional, highly directional, volume-confined polariton modes. Here we report that hyperbolic phonon polaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical applications, including unusual imaging phenomenon (such as an enlarged reconstruction of investigated objects) and sub-diffractional focusing. Both the enlarged imaging and the super-resolution focusing are explained based on the volume-confined, wavelength dependent propagation angle of hyperbolic phonon polaritons. With advanced infrared nanoimaging techniques and state-of-art mid-infrared laser sources, we have succeeded in demonstrating and visualizing these unexpected phenomena in both Type I and Type II hyperbolic conditions, with both occurring naturally within hexagonal boron nitride. These efforts have provided a full and intuitive physical picture for the understanding of the role of hyperbolic phonon polaritons in near-field optical imaging, guiding, and focusing applications. PMID:26112474

  10. Mid-infrared surface phonon polaritons in boron-nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Ghamsari, Behnood G.; Xu, Xiaoji G.; Gilburd, Leonid; Walker, Gilbert C.; Berini, Pierre

    2014-11-01

    Boron-nitride nanotubes (BNNTs) are structural analogs of carbon nanotubes formed from hexagonal boron-nitride (h-BN) sheets. h-BN exhibits strong phonon resonances which result in a negative permittivity band in the mid-infrared (mid-IR) part of the electromagnetic spectrum. Recently, we have experimentally demonstrated that BNNTs can support one-dimensional surface phonon polaritons (SPhPs) in the mid-IR. In this work, we thoroughly study the modal characteristics of the SPhP modes of BNNTs with respect to their structural attributes, such as diameter, hollowness, and ellipticity, as well as dispersion as a function of frequency. As is discussed in detail throughout the paper, the SPhP modes of BNNTs offer deep-subwavelength field confinement and large field enhancement and provide a viable means for nanophotonics, near-field optics, and thermo-optics at mid-IR wavelengths.

  11. Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Dauber, Jan; Sagade, Abhay A.; Oellers, Martin; Watanabe, Kenji; Taniguchi, Takashi; Neumaier, Daniel; Stampfer, Christoph

    2015-05-01

    The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ √{Hz } making our graphene sensors highly interesting for industrial applications.

  12. Transferrin-conjugated boron nitride nanotubes: protein grafting, characterization, and interaction with human endothelial cells.

    PubMed

    Ciofani, Gianni; Del Turco, Serena; Genchi, Giada Graziana; D'Alessandro, Delfo; Basta, Giuseppina; Mattoli, Virgilio

    2012-10-15

    In this paper we report on a covalent grafting of boron nitride nanotubes with human transferrin. After silanization of the nanotube wall, transferrin was linked to the nanotubes through carbamide binding. The obtained transferrin-conjugated boron nitride nanotubes (tf-BNNTs) resulted stable in aqueous environments and were characterized in terms of scanning electron microscopy, transmission electron microscopy, size distribution analysis and Z-potential measurement. Effective covalent grafting of transferrin was demonstrated by Fourier transform infrared spectroscopy and UV-Vis spectrophotometry. The obtained tf-BNNTs were thereafter tested on human umbilical vein endothelial cells (HUVECs); in particular cellular up-take was investigated by confocal, scanning and transmission electron microscopy, demonstrating the key role of transferrin during the internalization process. Here reported for the first time in the literature, the covalent BNNT functionalization with a targeting ligand represents a fundamental step towards BNNT exploitation as smart and selective nanocarriers in a number of nanomedicine applications.

  13. Selective sputtering and atomic resolution imaging of atomically thin boron nitride membranes.

    PubMed

    Meyer, Jannik C; Chuvilin, Andrey; Algara-Siller, Gerardo; Biskupek, Johannes; Kaiser, Ute

    2009-07-01

    We report on the preparation, atomic resolution imaging, and element selective damage mechanism in atomically thin boron nitride membranes. Flakes of less than 10 layers are prepared by mechanical cleavage and are thinned down to single layers in a high-energy electron beam. At our beam energies, we observe a highly selective sputtering of only one of the elements and predominantly at the exit surface of the specimen, and then subsequent removal of atoms next to a defect. Triangle-shaped holes appear in accordance with the crystallographic orientation of each layer. Defects are compared to those observed in graphene membranes. The observation of clean single-layer membranes shows that hexagonal boron nitride is a further material (in addition to graphene) that can exist in a quasi-two-dimensional allotrope without the need for a substrate.

  14. Hexagonal Boron Nitride Nanosheets as High-Performance Binder-Free Fire-Resistant Wood Coatings.

    PubMed

    Liu, Juanjuan; Kutty, Rajendrannair Govindan; Zheng, Qingshen; Eswariah, Varrla; Sreejith, Sivaramapanicker; Liu, Zheng

    2017-01-01

    Hexagonal boron nitride (h-BN) nanosheets are synthesized through a facile shear force liquid phase exfoliation method and their use as a binder-free oxidation and fire-resistant wood coating is demonstrated. Characterized by intrinsic low thermal diffusivity and thermal effusivity, h-BN nanosheet coatings show an excellent fire resistance and oxidation resistance up to 900 °C in air.

  15. Insertion mechanism and stability of boron nitride nanotubes in lipid bilayers.

    PubMed

    Thomas, Michael; Enciso, Marta; Hilder, Tamsyn A

    2015-04-16

    We provide insight into the interaction of boron nitride nanotubes (BNNTs) with cell membranes to better understand their improved biocompatibility compared to carbon nanotubes (CNTs). Contrary to CNTs, no computational studies exist investigating the insertion mechanism and stability of BNNTs in membranes. Our molecular dynamics simulations demonstrate that BNNTs are spontaneously attracted to lipid bilayers and are stable once inserted. They insert via a lipid-mediated, passive insertion mechanism. BNNTs demonstrate similar characteristics to more biocompatible functionalized CNTs.

  16. Freestanding Boron Nitride Nanosheet Films for Ultrafast Oil/Water Separation.

    PubMed

    Li, Taotao; Wang, Liangjie; Zhang, Kai; Xu, Yancui; Long, Xiaoyang; Gao, Shoujian; Li, Ru; Yao, Yagang

    2016-09-01

    Freestanding boron nitride nanosheet (BNNS) films with designed structures are first fabricated by chemical vapor deposition (CVD) methods. As-prepared freestanding BNNS films exhibit outstanding hydrophobicity and lipophilicity properties. Such brilliant behaviors make them applicable in oil/water separation with very high fluxes up to 1 200 000 L m(-2) h(-1) bar(-1) and excellent separation efficiencies (ppm level in terms of the water content in the filtrate).

  17. Fabrication of highly oriented hexagonal boron nitride nanosheet/elastomer nanocomposites with high thermal conductivity.

    PubMed

    Kuang, Zhiqiao; Chen, Yulong; Lu, Yonglai; Liu, Li; Hu, Shui; Wen, Shipeng; Mao, Yingyan; Zhang, Liqun

    2015-04-08

    A homogeneous dispersion of hexagonal boron nitride nanosheets (BNNSs) in elastomers is obtained by solution compounding methods, and a high orientation of BNNSs is achieved by strong shearing. The composites show high thermal conductivities, especially when BNNS loading exceeds 17.5 vol%, indicating that the material is promising for thermal-management applications which need high thermal conductivity, low dielectric constant, and adequate softness.

  18. Ionizing and Non-ionizing Radiation Effects in Thin Layer Hexagonal Boron Nitride

    DTIC Science & Technology

    2015-03-01

    M-099 Abstract The radiation response of 14nm h-BN/Si metal insulator semiconductor (MIS) devices was investigated using current-voltage and... insulator and passivation layers to maintain performance, but options are limited. Hexagonal boron nitride (h-BN) is one candidate for use with...graphene-based electronic systems because it has the same lattice structure as graphene, is an insulator , and is known to form on graphene surfaces. h

  19. Enhancement of neurite outgrowth in neuronal-like cells following boron nitride nanotube-mediated stimulation.

    PubMed

    Ciofani, Gianni; Danti, Serena; D'Alessandro, Delfo; Ricotti, Leonardo; Moscato, Stefania; Bertoni, Giovanni; Falqui, Andrea; Berrettini, Stefano; Petrini, Mario; Mattoli, Virgilio; Menciassi, Arianna

    2010-10-26

    In this paper, we propose an absolutely innovative technique for the electrical stimulation of cells, based on piezoelectric nanoparticles. Ultrasounds are used to impart mechanical stress to boron nitride nanotubes incubated with neuronal-like PC12 cells. By virtue of their piezoelectric properties, these nanotubes can polarize and convey electrical stimuli to the cells. PC12 stimulated with the present method exhibit neurite sprout 30% greater than the control cultures after 9 days of treatment.

  20. Internal grinding of high-speed steels: Shorter processing times with boron nitride grinding tools

    NASA Astrophysics Data System (ADS)

    Borse, D.

    Boron nitride grinding tools can be used to advantage for the grinding of high speed steel (HSS) with a high vanadium content. the abrasives available to date are of limited value because the HSS materials contain very hard carbides, grinding of which, and of vanadium carbide in particular, results in very rapid wear in silicon carbide or corundum grinding wheels. The hardness of these steels is usually 62 RC to 70 RC. Boron nitride grinding tools are advantageous for internal grinding of workpieces made of high speed steel for example, sockets, milling tool bores, cutting wheels and crushing rollers. To date, boron nitride grinding wheels or pencil grinders were bonded with synthetic resin. Consequently internal grinding is usually carried out as wet grinding. In the meantime grinding tools bonded with electrodeposited metal bonds (GSS) were developed and proved to be successful for internal grinding. The abrasive grains which are arranged in a single layer protrude freely from the electrobond. During grinding very little heat is generated, so that dry grinding is possible.

  1. Sub-diffractional volume-confined polaritons in the natural hyperbolic material hexagonal boron nitride.

    PubMed

    Caldwell, Joshua D; Kretinin, Andrey V; Chen, Yiguo; Giannini, Vincenzo; Fogler, Michael M; Francescato, Yan; Ellis, Chase T; Tischler, Joseph G; Woods, Colin R; Giles, Alexander J; Hong, Minghui; Watanabe, Kenji; Taniguchi, Takashi; Maier, Stefan A; Novoselov, Kostya S

    2014-10-17

    Strongly anisotropic media, where the principal components of the dielectric tensor have opposite signs, are called hyperbolic. Such materials exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional length scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic losses and require complex nanofabrication, which in turn induces size-dependent limitations on optical confinement. The low-loss, mid-infrared, natural hyperbolic material hexagonal boron nitride is an attractive alternative. Here we report on three-dimensionally confined 'hyperbolic polaritons' in boron nitride nanocones that support four series (up to the seventh order) modes in two spectral bands. The resonant modes obey the predicted aspect ratio dependence and exhibit high-quality factors (Q up to 283) in the strong confinement regime (up to λ/86). These observations assert hexagonal boron nitride as a promising platform for studying novel regimes of light-matter interactions and nanophotonic device engineering.

  2. Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

    SciTech Connect

    Teii, K. Ito, H.; Katayama, N.; Matsumoto, S.

    2015-02-07

    Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp{sup 2}-bonded boron nitride (sp{sup 2}BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp{sup 2}BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10{sup 4} at ±10 V of biasing with increasing the sp{sup 2}BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation of the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp{sup 2}BN thickness. The forward current follows the Frenkel-Poole emission model in the sp{sup 2}BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp{sup 2}BN interlayer, while that of the major carriers for forward current is much less affected.

  3. Evolution of magnetism by rolling up hexagonal boron nitride nanosheets tailored with superparamagnetic nanoparticles.

    PubMed

    Hwang, Da Young; Choi, Kyoung Hwan; Park, Jeong Eon; Suh, Dong Hack

    2017-02-01

    Controlling tunable properties by rolling up two dimensional nanomaterials is an exciting avenue for tailoring the electronic and magnetic properties of materials at the nanoscale. We demonstrate the tailoring of a magnetic nanocomposite through hybridization with magnetic nanomaterials using hexagonal boron nitride (h-BN) templates as an effective way to evolve magnetism for the first time. Boron nitride nanosheets exhibited their typical diamagnetism, but rolled-up boron nitride sheets (called nanoscrolls) clearly have para-magnetism in the case of magnetic susceptibility. Additionally, the Fe3O4 NP sample shows a maximum ZFC curve at about 103 K, which indicates well dispersed superparamagnetic nanoparticles. The ZFC curve for the h-BN-Fe3O4 NP scrolls exhibited an apparent rounded maximum blocking temperature at 192 K compared to the Fe3O4 NPs, leading to a dramatic increase in TB. These magnetic nanoscroll derivatives are remarkable materials and should be suitable for high-performance composites and nano-, medical- and electromechanical-devices.

  4. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    NASA Astrophysics Data System (ADS)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  5. The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

    SciTech Connect

    Zhang, Ning Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2015-08-15

    Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest.

  6. Ultra-sensitive Hall sensors based on graphene boron nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Dauber, Jan; Sagade, Abhay A.; Oellers, Martin; Watanabe, Kenji; Taniguchi, Takashi; Neumaier, Daniel; Stampfer, Christoph

    2015-03-01

    Recent developments of encapsulating graphene in hexagonal boron nitride lead to well protected graphene with very high material quality. This opens interesting possibilities for applications, such as graphene-based Hall sensors. Magnetic field sensors using Hall effect are widely used in different fields of applications, e.g. automotive and consumer electronics. Their performance benefits greatly from high room temperature mobility and low charge carrier density, which makes graphene boron nitride heterostructures a promising material for these devices. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures. We show a detailed characterization including Hall effect measurements under ambient and vacuum conditions. We achieve current- and voltage-related sensitivity up to 5700 V/AT and 3V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we determine a magnetic resolution limited by low frequency electric noise less than 0.5 mG/?Hz.

  7. The mechanism for low temperature growth of vertically aligned boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Jiesheng; Xie, Ming; Khin Yap, Yoke

    2006-03-01

    Boron nitride nanotubes (BNNTs) are well recognized as the candidate that will complement the uses of carbon nanotubes (CNTs) in nanotechnology. However, high growth temperatures (>1100 ^oC), low production yield, and impurities have prevented effective synthesis and applications of boron nitride nanotubes (BNNTs) in the past ten years. For the first time, we have succeeded on the growth of pure BNNTs on substrates [1, 2]. This has been realized based on our experiences of growing CNTs and boron nitride (BN) phases (cubic phase BN, hexagonal phase BN). According to our hypothetical model, energetic growth species play an important role on controlling the phases of BN solids. We have experimentally verified that BNNTs can be grown by energetic growth species by a plasma-enhanced pulsed laser deposition (PEPLD) technique. These BNNTs can be grown vertically aligned into arrays of regular patterns at 600 ^oC, and can be used for applications without purification. The growth mechanism of thee BNNTs will be discussed. [1]. Yap et al., Bull APS Vol 50, 1346-1347 (March 2005). [2]. Wang et al., nano Letters (2005) ASAP, DOI: 10.1021/nl051859n.

  8. Sub-diffractional volume-confined polaritons in the natural hyperbolic material hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Caldwell, Joshua D.; Kretinin, Andrey V.; Chen, Yiguo; Giannini, Vincenzo; Fogler, Michael M.; Francescato, Yan; Ellis, Chase T.; Tischler, Joseph G.; Woods, Colin R.; Giles, Alexander J.; Hong, Minghui; Watanabe, Kenji; Taniguchi, Takashi; Maier, Stefan A.; Novoselov, Kostya S.

    2014-10-01

    Strongly anisotropic media, where the principal components of the dielectric tensor have opposite signs, are called hyperbolic. Such materials exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional length scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic losses and require complex nanofabrication, which in turn induces size-dependent limitations on optical confinement. The low-loss, mid-infrared, natural hyperbolic material hexagonal boron nitride is an attractive alternative. Here we report on three-dimensionally confined ‘hyperbolic polaritons’ in boron nitride nanocones that support four series (up to the seventh order) modes in two spectral bands. The resonant modes obey the predicted aspect ratio dependence and exhibit high-quality factors (Q up to 283) in the strong confinement regime (up to λ/86). These observations assert hexagonal boron nitride as a promising platform for studying novel regimes of light-matter interactions and nanophotonic device engineering.

  9. Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Burat, O.; Bouchier, D.; Stambouli, V.; Gautherin, G.

    1990-09-01

    We have studied boron nitride films deposited at room temperature by ion-beam-assisted deposition in an ultrahigh vacuum apparatus, with ion accelerating voltages ranging between 0.25 and 2 kV. By using complementarily in situ Auger electron spectrometry and ex situ nuclear analyses to determine the respective surface and bulk N concentrations in the deposited films, we were able to identify the different phases of the mechanism leading to the nitridation of evaporated boron by nitrogen ions. For low nitrogen/boron flux ratios, the incorporation of nitrogen seems to be only governed by ion implantation, and, with respect to the depth of the deposit, the surface is found largely depleted in nitrogen, while the N-incorporation yield remains close to one whatever the ion energy. Such a behavior is well verified as long as a critical bulk nitrogen concentration close to 5.5×1022 cm-3 has not been achieved. For concentrations greater than this, superstoichiometric material is obtained up to a saturation which corresponds to a bulk N incorporation ranging from 6 to 7×1022 cm-3. Further increase of the N/B flux ratio induces a strong diffusion process from N-rich bulk to N-depleted surface, which results in the nitridation of surface boron atoms and a loss of nitrogen by sputtering or desorption. The density measurements seem to indicate that the synthesized phase is close to h-BN. However, the density of B-rich layers ([N]/[B]≊0.2-0.3) is found to be very close to that calculated for a mixture of pure boron and c-BN. The transparency and microhardness of the synthesized BN have satisfying values for its application as a wear-resistant optical coating, but it is not c-BN.

  10. Thymine adsorption on two-dimensional boron nitride structures: first-principles studies.

    PubMed

    Castro-Medina, J; García-Toral, D; López-Fuentes, M; Sánchez-Castillo, A; Torres-Morales, S; de la Garza, L Morales; Cocoletzi, Gregorio H

    2017-04-01

    First-principles total-energy calculations were performed to investigate the structural and electronic properties of thymine (T) adsorption on pristine and Al-doped two-dimensional hexagonal boron nitride (2D-hBN) surfaces. Periodic density functional theory, as developed in the PWscf code of the quantum espresso package, was applied. The pseudopotential theory was used to deal with electron-ion interactions. The generalized gradient approximation was applied to treat the exchange-correlation energies. Van der Waals interactions were incorporated in the calculations. Considering T as an elongated molecule and the interactions through one oxygen atom of the molecule ring, two geometries were explored in pristine and Al-doped systems: in (1) the ring side O interacts with B, and (2) the O at the molecule end interacting with the B. The pristine case yields (4 × 4-a), (5 × 5-b) and (6 × 6-b) as the ground states, , while the doped system shows (4 × 4-a), (5 × 5-a) and (6 × 6-a) as the ground states. Calculations of the adsorption energies indicate chemisorption. Doping enhances the surface reactivity, inducing larger binding energies. The total density of states (DOS) was calculated and interpreted with the aid of the projected DOS. Below the Fermi energy, the DOS graphs indicate that p orbitals make the largest contributions. Above the Fermi level, the DOS is formed mainly by -s and H-s orbitals. The DOS graphs indicate that the structures have non-semiconductor behavior.

  11. Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film

    NASA Astrophysics Data System (ADS)

    Ko, Ji-Sun; Park, Jong-Keuk; Lee, Wook-Seong; Huh, Joo-Youl; Baik, Young-Joon

    2013-11-01

    Cubic boron nitride (c-BN) films were deposited by an unbalanced magnetron sputtering method. A (100) Si wafer with a nanocrystalline diamond thin film as a surface coating layer or that without it was used as a substrate. The target power was varied from 100 to 400 W. A boron nitride target was used, which was connected to a radio frequency power supply. High frequency power connected to a substrate holder was used for self-biasing. The deposition pressure was 0.27 MPa with a flow of Ar (18 sccm) — N2 (2 sccm) mixed gas. The existence of threshold bias voltages for c-BN formation and resputtering were observed irrespective of target power. The bias voltage window for c-BN formation broadened with increased target power. The deposition rate decreased with enhanced bias voltage and decreased target power. Residual stresses of the films did not vary noticeably with target power within the target power range of c-BN formation. A parameter space for c-BN formation according to the target power and the bias voltage, as two variables, was suggested.

  12. Can metal-free silicon-doped hexagonal boron nitride nanosheets and nanotubes exhibit activity toward CO oxidation?

    PubMed

    Lin, Sen; Ye, Xinxin; Huang, Jing

    2015-01-14

    Si-doped hexagonal boron nitride nanosheets (Si-BNNS) and nanotubes (Si-BNNT) have been investigated by first-principle methods. The strong interaction between the silicon atom and the hexagonal boron nitride nanosheet or nanotube with a boron vacancy indicates that such nanocomposites should be very stable. The significant charge transfer from the Si-BNNS substrate to the O2 molecule, which could occupy the antibonding 2π* orbitals of O2, results in the activation of the adsorbed O2. The catalytic activity of the Si-BNNS for CO oxidation is explored and the calculated barrier (0.29 eV) of the reaction CO + O2→ CO2 + O is much lower than those on the traditional noble metals. This opens a new avenue to fabricate low cost and high activity boron nitride-based metal-free catalysts.

  13. Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets

    NASA Astrophysics Data System (ADS)

    WangEqual Contribution To This Work., Jian; Wang, Zhiqiang; Cho, Hyunjin; Kim, Myung Jong; Sham, T. K.; Sun, Xuhui

    2015-01-01

    Chemical imaging, thickness mapping, layer speciation and polarization dependence have been performed on single and multilayered (up to three layers and trilayered nanosheets overlapping to form 6 and 9 layers) hexagonal boron nitride (hBN) nanosheets by scanning transmission X-ray microscopy. Spatially-resolved XANES directly from freestanding regions of different layers has been extracted and compared with sample normal and 30° tilted configurations. Notably a double feature σ* excitonic state and a stable high energy σ* state were observed at the boron site in addition to the intense π* excitonic state. The boron projected σ* DOS, especially the first σ* exciton, is sensitive to surface modification, particularly in the single layered hBN nanosheet which shows more significant detectable contaminants and defects such as tri-coordinated boron/nitrogen oxide. The nitrogen site has shown very weak or no excitonic character. The distinct excitonic effect on boron and nitrogen was interpreted to the partly ionic state of hBN. Bulk XANES of hBN nanosheets was also measured to confirm the spectro-microscopic STXM result. Finally, the unoccupied electronic structures of hBN and graphene were compared.Chemical imaging, thickness mapping, layer speciation and polarization dependence have been performed on single and multilayered (up to three layers and trilayered nanosheets overlapping to form 6 and 9 layers) hexagonal boron nitride (hBN) nanosheets by scanning transmission X-ray microscopy. Spatially-resolved XANES directly from freestanding regions of different layers has been extracted and compared with sample normal and 30° tilted configurations. Notably a double feature σ* excitonic state and a stable high energy σ* state were observed at the boron site in addition to the intense π* excitonic state. The boron projected σ* DOS, especially the first σ* exciton, is sensitive to surface modification, particularly in the single layered hBN nanosheet which

  14. First-Principles-Based Method for Electron Localization: Application to Monolayer Hexagonal Boron Nitride.

    PubMed

    Ekuma, C E; Dobrosavljević, V; Gunlycke, D

    2017-03-10

    We present a first-principles-based many-body typical medium dynamical cluster approximation and density function theory method for characterizing electron localization in disordered structures. This method applied to monolayer hexagonal boron nitride shows that the presence of boron vacancies could turn this wide-gap insulator into a correlated metal. Depending on the strength of the electron interactions, these calculations suggest that conduction could be obtained at a boron vacancy concentration as low as 1.0%. We also explore the distribution of the local density of states, a fingerprint of spatial variations, which allows localized and delocalized states to be distinguished. The presented method enables the study of disorder-driven insulator-metal transitions not only in h-BN but also in other physical materials.

  15. Laser-initiated primary and secondary nuclear reactions in Boron-Nitride

    NASA Astrophysics Data System (ADS)

    Labaune, C.; Baccou, C.; Yahia, V.; Neuville, C.; Rafelski, J.

    2016-02-01

    Nuclear reactions initiated by laser-accelerated particle beams are a promising new approach to many applications, from medical radioisotopes to aneutronic energy production. We present results demonstrating the occurrence of secondary nuclear reactions, initiated by the primary nuclear reaction products, using multicomponent targets composed of either natural boron (B) or natural boron nitride (BN). The primary proton-boron reaction (p + 11B → 3 α + 8.7 MeV), is one of the most attractive aneutronic fusion reaction. We report radioactive decay signatures in targets irradiated at the Elfie laser facility by laser-accelerated particle beams which we interpret as due to secondary reactions induced by alpha (α) particles produced in the primary reactions. Use of a second nanosecond laser beam, adequately synchronized with the short laser pulse to produce a plasma target, further enhanced the reaction rates. High rates and chains of reactions are essential for most applications.

  16. First-Principles-Based Method for Electron Localization: Application to Monolayer Hexagonal Boron Nitride

    NASA Astrophysics Data System (ADS)

    Ekuma, C. E.; Dobrosavljević, V.; Gunlycke, D.

    2017-03-01

    We present a first-principles-based many-body typical medium dynamical cluster approximation and density function theory method for characterizing electron localization in disordered structures. This method applied to monolayer hexagonal boron nitride shows that the presence of boron vacancies could turn this wide-gap insulator into a correlated metal. Depending on the strength of the electron interactions, these calculations suggest that conduction could be obtained at a boron vacancy concentration as low as 1.0%. We also explore the distribution of the local density of states, a fingerprint of spatial variations, which allows localized and delocalized states to be distinguished. The presented method enables the study of disorder-driven insulator-metal transitions not only in h -BN but also in other physical materials.

  17. Physicochemical properties of armchair non-stoichiometric boron nitride nanotubes: A density functional theory analysis

    NASA Astrophysics Data System (ADS)

    Chigo Anota, Ernesto; Salazar Villanueva, Martin; García Toral, Dolores; Tepech Carrillo, Lorenzo; Melchor Martínez, Maria del Rosario

    2016-01-01

    DFT-GGA calculations were carried out in order to analyze the structural and electronic properties of Boron Nitride nanotubes (BNNTs) for two cases: pristine and non-stoichiometric, this last rich in atoms of Nitrogen as Boron. After geometric optimization process, the doped BNNTs present an important reduction on values of HOMO-LUMO gap versus pristine case, as well as these systems have high polarity and low chemical reactivity. This effect in particular is enhanced for the nanotube with excess in Boron atoms moreover this indicates its potential application as drug delivery. An important structural feature was found for the above system due to they show very similar geometry with respect to B40 fullerene. The doped BNNTs possess low values of work function which fits to design devices for different applications.

  18. A path for synthesis of boron-nitride nanostructures in volume of arc plasma.

    PubMed

    Han, Longtao; Krstić, Predrag

    2017-02-17

    We find a possible channel for direct nanosynthesis of boron-nitride (BN) nanostructures, including growth of BN nanotubes from a mixture of BN diatomic molecules by quantum-classical molecular dynamics simulations. No catalyst or boron nanoparticle is needed for this synthesis, however the conditions for the synthesis of each of the nanostructures, such as temperature and flux of the BN feedstock are identified and are compatible with the conditions in an electric arc at high pressure. We also find that BN nanostructures can be synthetized by feeding a boron nanoparticle by BN diatomic molecules, however if hydrogen rich molecules like NH3 or HBNH are used as a feedstock, two-dimensional nanoflake stable structures are formed.

  19. Laser-initiated primary and secondary nuclear reactions in Boron-Nitride.

    PubMed

    Labaune, C; Baccou, C; Yahia, V; Neuville, C; Rafelski, J

    2016-02-17

    Nuclear reactions initiated by laser-accelerated particle beams are a promising new approach to many applications, from medical radioisotopes to aneutronic energy production. We present results demonstrating the occurrence of secondary nuclear reactions, initiated by the primary nuclear reaction products, using multicomponent targets composed of either natural boron (B) or natural boron nitride (BN). The primary proton-boron reaction (p + (11)B → 3 α + 8.7 MeV), is one of the most attractive aneutronic fusion reaction. We report radioactive decay signatures in targets irradiated at the Elfie laser facility by laser-accelerated particle beams which we interpret as due to secondary reactions induced by alpha (α) particles produced in the primary reactions. Use of a second nanosecond laser beam, adequately synchronized with the short laser pulse to produce a plasma target, further enhanced the reaction rates. High rates and chains of reactions are essential for most applications.

  20. A path for synthesis of boron-nitride nanostructures in volume of arc plasma

    NASA Astrophysics Data System (ADS)

    Han, Longtao; Krstić, Predrag

    2017-02-01

    We find a possible channel for direct nanosynthesis of boron-nitride (BN) nanostructures, including growth of BN nanotubes from a mixture of BN diatomic molecules by quantum-classical molecular dynamics simulations. No catalyst or boron nanoparticle is needed for this synthesis, however the conditions for the synthesis of each of the nanostructures, such as temperature and flux of the BN feedstock are identified and are compatible with the conditions in an electric arc at high pressure. We also find that BN nanostructures can be synthetized by feeding a boron nanoparticle by BN diatomic molecules, however if hydrogen rich molecules like NH3 or HBNH are used as a feedstock, two-dimensional nanoflake stable structures are formed.

  1. A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of A Nanocomposite with High Thermal Conductivity.

    PubMed

    Zeng, Xiaoliang; Sun, Jiajia; Yao, Yimin; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

    2017-04-12

    With the current development of modern electronics towards miniaturization, high-degree integration and multi-functionalization, considerable heat is accumulated, which results in the thermal failure or even explosion of modern electronics. The thermal conductivity of materials has thus attracted much attention in modern electronics. Although polymer composites with enhanced thermal conductivity are expected to address this issue, achieving higher thermal conductivity (above 10 W m-1 K-1) at filler loadings below 50.0 wt% remains challenging. Here, we report a nanocomposite consisting of boron nitride nanotubes and cellulose nanofibers that exhibits high thermal conductivity (21.39 W m-1 K-1) at 25.0 wt% boron nitride nanotubes. Such high thermal conductivity is attributed to the high intrinsic thermal conductivity of boron nitride nanotubes and cellulose nanofibers, the one-dimensional structure of boron nitride nanotubes, and the reduced interfacial thermal resistance due to the strong interaction between the boron nitride nanotubes and cellulose nanofibers. Using the as-prepared nanocomposite as a flexible printed circuit board, we demonstrate its potential usefulness in electronic device-cooling applications. This thermally conductive nanocomposite has promising applications in thermal interface materials, printed circuit boards or organic substrates in electronics and could supplement conventional polymer-based materials.

  2. A molecular dynamics study on the vibration of carbon and boron nitride double-walled hybrid nanotubes

    NASA Astrophysics Data System (ADS)

    Ansari, R.; Ajori, S.

    2015-09-01

    Synthesis of hybrid nanotubes to overcome the drawbacks of individual pure nanotubes in order to apply them in novel nanodevices has attracted great interest of researchers. To this end, pure single- and double-walled boron nitride nanotubes together with carbon and boron nitride double-walled hybrid nanotubes are simulated through molecular dynamics simulations in order to study their vibrational behavior. The natural frequency of nanotubes is computed, and the effects of geometrical parameters and boundary conditions on the natural frequency are investigated. According to the generated results, the natural frequency of boron nitride nanotubes is higher than that of their carbon counterpart and nanotubes with clamped boundary conditions possess the highest natural frequency compared to other types of boundary conditions. Also, the natural frequency of double-walled hybrid nanotubes is found to be between those of pure double-walled boron nitride and carbon nanotubes with small lengths. It is found that the natural frequency of double-walled hybrid nanotubes is less sensitive to length increase compared to pure double-walled carbon and boron nitride ones, leading to higher frequencies at greater lengths. Finally, to study the variation in natural frequency with the length, a rational curve is fitted to each data set and the corresponding constants are computed.

  3. Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets.

    PubMed

    Wang, Jian; Wang, Zhiqiang; Cho, Hyunjin; Kim, Myung Jong; Sham, T K; Sun, Xuhui

    2015-02-07

    Chemical imaging, thickness mapping, layer speciation and polarization dependence have been performed on single and multilayered (up to three layers and trilayered nanosheets overlapping to form 6 and 9 layers) hexagonal boron nitride (hBN) nanosheets by scanning transmission X-ray microscopy. Spatially-resolved XANES directly from freestanding regions of different layers has been extracted and compared with sample normal and 30° tilted configurations. Notably a double feature σ* excitonic state and a stable high energy σ* state were observed at the boron site in addition to the intense π* excitonic state. The boron projected σ* DOS, especially the first σ* exciton, is sensitive to surface modification, particularly in the single layered hBN nanosheet which shows more significant detectable contaminants and defects such as tri-coordinated boron/nitrogen oxide. The nitrogen site has shown very weak or no excitonic character. The distinct excitonic effect on boron and nitrogen was interpreted to the partly ionic state of hBN. Bulk XANES of hBN nanosheets was also measured to confirm the spectro-microscopic STXM result. Finally, the unoccupied electronic structures of hBN and graphene were compared.

  4. Final LDRD report : the physics of 1D and 2D electron gases in III-nitride heterostructure NWs.

    SciTech Connect

    Armstrong, Andrew M.; Arslan, Ilke; Upadhya, Prashanth C.; Morales, Eugenia T.; Leonard, Francois Leonard; Li, Qiming; Wang, George T.; Talin, Albert Alec; Prasankumar, Rohit P.; Lin, Yong

    2009-09-01

    The proposed work seeks to demonstrate and understand new phenomena in novel, freestanding III-nitride core-shell nanowires, including 1D and 2D electron gas formation and properties, and to investigate the role of surfaces and heterointerfaces on the transport and optical properties of nanowires, using a combined experimental and theoretical approach. Obtaining an understanding of these phenomena will be a critical step that will allow development of novel, ultrafast and ultraefficient nanowire-based electronic and photonic devices.

  5. Adsorption of Sugars on Al- and Ga-doped Boron Nitride Surfaces: A Computational Study

    NASA Astrophysics Data System (ADS)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2015-12-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets ($h$-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on $h$-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  6. Growth and characterization of boron nitride nanotubes having novel morphologies using mechanothermal process

    NASA Astrophysics Data System (ADS)

    Singhal, Sunil Kumar; Srivastava, Avanish Kumar; Dilawar, Nita; Gupta, Anil Kumar

    2010-08-01

    We report an effective approach to synthesize boron nitride (BN) nanotubes having novel morphologies employing a mechanothermal process. In this process, a precursor containing B-N-O-Fe was first synthesized by ball milling a 1:1 mixture of elemental boron (B) and hexagonal boron nitride (hBN) and iron oxide (about 6 wt%) for about 36 h in the presence of ammonia gas. BN nanotubes were grown by annealing this precursor in ammonia gas atmosphere at 1,250-1,350 °C for about 3 h. The nanotubes produced using this technique were found to evolve structures having Y-junctions and bamboo-like morphology with an average diameter of about 30-100 nm and length several microns. A few nanotubes with partially folded in diameter were also found to co-exist along with other nanotubes. These nanotubes were characterized using various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and Raman spectroscopy. The growth mechanism for the formation of these novel morphologies in BN nanotubes is also discussed.

  7. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    NASA Astrophysics Data System (ADS)

    Nistor, L. C.; Nistor, S. V.; Dinca, G.; Georgeoni, P.; Van Landuyt, J.; Manfredotti, C.; Vittone, E.

    2002-11-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 ± 15 mJ m-2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.

  8. Temperature-controlled colossal magnetoresistance and perfect spin Seebeck effect in hybrid graphene/boron nitride nanoribbons.

    PubMed

    Zhu, Lin; Li, Ruimin; Yao, Kailun

    2017-02-01

    Thermal spin transport properties of graphene and hexagonal boron nitride nanoribbon heterojunctions have been investigated using density functional theory calculations combined with the Keldysh nonequilibrium Green's function approach. The results showed that the perfect spin Seebeck effect and analogy negative differential thermoelectric resistance occurred in the device under a temperature difference without a gate or bias voltage. An intriguing thermally induced colossal magnetoresistance without gate regulation was also observed, which can be switched between a positive and negative value with temperature control. It was also found that the unit number of zigzag graphene nanoribbons and boron nitride nanoribbons can tune the electronic band structure and the energy gap of the heterostructure, and then modulate the thermal spin transport properties. The results suggest that graphene and hexagonal boron nitride nanoribbon heterostructures may have potential applications in graphene-based nanodevices.

  9. Thin boron nitride nanotubes with unusual large inner diameters

    NASA Astrophysics Data System (ADS)

    Ma, Renzhi; Bando, Yoshio; Sato, Tadao; Kurashima, Keiji

    2001-12-01

    BN nanotubes, displaying the characteristics of few concentric layers (2-6 layers) but unusual large inner diameters (ranging from 8 to more than 10 nm), are synthesized by a chemical vapor deposition (CVD) method on α-Al 2O 3 micrometer-range particles. The inner diameters are at least 5 nm larger than the previously reported BN nanotubes of similar layers. Some BN nanotubes are observed to be filled with B-N-O-based amorphous materials. Crystalline core fillings (in the form of boron carbide nanorods) were also discovered. The discussions suggested that the CVD growth behavior of BN nanotubes may be closely dependent on the underlying substrates, which may be helpful to the possible rational synthesis of BN nanotubes.

  10. Boron nitride nanotube-functionalised myoblast/microfibre constructs: a nanotech-assisted tissue-engineered platform for muscle stimulation.

    PubMed

    Danti, Serena; Ciofani, Gianni; Pertici, Gianni; Moscato, Stefania; D'Alessandro, Delfo; Ciabatti, Elena; Chiellini, Federica; D'Acunto, Mario; Mattoli, Virgilio; Berrettini, Stefano

    2015-07-01

    In this communication, we introduce boron nitride nanotube (BNNT)-functionalised muscle cell/microfibre mesh constructs, obtained via tissue engineering, as a three-dimensional (3D) platform to study a wireless stimulation system for electrically responsive cells and tissues. Our stimulation strategy exploits the piezoelectric behaviour of some classes of ceramic nanoparticles, such as BNNTs, able to polarize under mechanical stress, e.g. using low-frequency ultrasound (US). In the microfibre scaffolds, C2C12 myoblasts were able to differentiate into viable myotubes and to internalize BNNTs, also upon US irradiation, so as to obtain a nanotech-assisted 3D in vitro model. We then tested our stimulatory system on 2D and 3D cellular models by investigating the expression of connexin 43 (Cx43), as a molecule involved in cell crosstalk and mechanotransduction, and myosin, as a myogenic differentiation marker. Cx43 gene expression revealed a marked model dependency. In control samples (without US and/or BNNTs), Cx43 was upregulated under 2D culture conditions (10.78 ± 1.05-fold difference). Interactions with BNNTs increased Cx43 expression in 3D samples. Cx43 mRNA dropped in 2D under the 'BNNTs + US' regimen, while it was best enhanced in 3D samples (3.58 ± 1.05 vs 13.74 ± 1.42-fold difference, p = 0.0001). At the protein level, the maximal expressions of Cx43 and myosin were detected in the 3D model. In contrast with the 3D model, in 2D cultures, BNNTs and US exerted a synergistic depletive effect upon myosin synthesis. These findings indicate that model dimensionality and stimulatory regimens can strongly affect the responses of signalling and differentiation molecules, proving the importance of developing proper in vitro platforms for biological modelling.

  11. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

    PubMed Central

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K.; D’ Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I-Nan; Haenen, Ken

    2016-01-01

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm2 and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm2 FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission. PMID:27404130

  12. Boron nitride nanotubes and nanoplatelets as reinforcing agents of polymeric matrices for bone tissue engineering.

    PubMed

    Farshid, Behzad; Lalwani, Gaurav; Shir Mohammadi, Meisam; Simonsen, John; Sitharaman, Balaji

    2017-02-01

    This study investigates the mechanical properties and in vitro cytotoxicity of one- and two-dimensional boron nitride nanomaterials-reinforced biodegradable polymeric nanocomposites. Poly(propylene fumarate) (PPF) nanocomposites were fabricated using crosslinking agent N-vinyl pyrrolidone and inorganic nanomaterials: boron nitride nanotubes (BNNTs) and boron nitride nanoplatelets (BNNPs) dispersed at 0.2 wt % in the polymeric matrix. The incorporation of BNNPs and BNNTs resulted in a ∼38 and ∼15% increase in compressive (Young's) modulus, and ∼31 and ∼6% increase in compressive yield strength compared to PPF control, respectively. The nanocomposites showed a time-dependent increased protein adsorption for collagen I protein. The cytotoxicity evaluation of aqueous BNNT and BNNP dispersions (at 1-100 μg/mL concentrations) using murine MC3T3 preosteoblast cells showed ∼73-99% viability. The cytotoxicity evaluation of media extracts of nanocomposites before crosslinking, after crosslinking, and upon degradation (using 1×-100× dilutions) showed dose-dependent cytotoxicity responses. Crosslinked nanocomposites showed excellent (∼79-100%) cell viability, cellular attachment (∼57-67%), and spreading similar to cells grown on the surface of tissue culture polystyrene control. The media extracts of degradation products showed a dose-dependent cytotoxicity. The favorable cytocompatibility results in combination with improved mechanical properties of BNNT and BNNP nanocomposites opens new avenues for further in vitro and in vivo safety and efficacy studies towards bone tissue engineering applications. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 406-419, 2017.

  13. Nanoindentation measurements of a highly oriented wurtzite-type boron nitride bulk crystal

    NASA Astrophysics Data System (ADS)

    Deura, Momoko; Kutsukake, Kentaro; Ohno, Yutaka; Yonenaga, Ichiro; Taniguchi, Takashi

    2017-03-01

    We succeeded in synthesizing a bulk crystal of wurtzite-type boron nitride (w-BN) by the direct conversion method. The synthesized crystal was approximately 2 mm wide and 350 µm thick, and highly oriented to the c-axis. We performed nanoindentation measurements on the c-plane of the w-BN crystal at room temperature to evaluate the mechanical properties of w-BN. The hardness and Young’s modulus of w-BN from the obtained curves were simultaneously determined to be 54 ± 2 and 860 ± 40 GPa, respectively. The underlying physical mechanism that dominates the mechanical properties of group-III nitride semiconductors is also examined.

  14. Very long single- and few-walled boron nitride nanotubes via the pressurized vapor/condenser method

    SciTech Connect

    Michael W. Smith; Jordan, Kevin C.; Park, Cheol; Kim, Jae-Woo; Lillehei, Peter T.; Crooks, Roy; Harrison, Joycelyn S.

    2009-11-01

    Boron nitride nanotubes (BNNTs) are desired for their exceptional mechanical, electronic, thermal, structural, textural, optical, and quantum properties. A new method for producing long, small-diameter, single- and few-walled, boron nitride nanotubes (BNNTs) in macroscopic quantities is reported. The pressurized vapor/condenser (PVC) method produces, without catalysts, highly crystalline, very long, small-diameter, BNNTs. Palm-sized, cotton-like masses of BNNT raw material were grown by this technique and spun directly into centimeters-long yarn. Nanotube lengths were observed to be 100 times that of those grown by the most closely related method. Self-assembly and growth models for these long BNNTs are discussed.

  15. Molecular dynamics simulations of trihalomethanes removal from water using boron nitride nanosheets.

    PubMed

    Azamat, Jafar; Khataee, Alireza; Joo, Sang Woo

    2016-04-01

    Molecular dynamics simulations were performed to investigate the separation of trihalomethanes (THMs) from water using boron nitride nanosheets (BNNSs). The studied systems included THM molecules and a functionalized BNNS membrane immersed in an aqueous solution. An external pressure was applied to the z axis of the systems. Two functionalized BNNSs with large fluorinated-hydrogenated pore (F-H-pores) and small hydrogen-hydroxyl pore (H-OH-pores) were used. The pores of the BNNS membrane were obtained by passivating each nitrogen and boron atoms at the pore edges with fluorine and hydrogen atoms in the large pore or with hydroxyl and hydrogen atoms in the small pore. The results show that the BNNS with a small functionalized pore was impermeable to THM molecules, in contrast to the BNNS with a large functionalized pore. Using these membranes, water contaminants can be removed at lower cost.

  16. Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure

    SciTech Connect

    Choi, B.J.

    1999-12-01

    Hexagonal boron nitride (h-BN) films were deposited onto a graphite substrate in reduced pressure by reacting ammonia and boron tribromide at 800--1,200 C. The growth rate of h-BN films was dependent on the substrate temperature and the total pressures. The growth rate increased with increasing the substrate temperature at the pressure of 2 kPa, while it showed a maximum value at the pressures of 4 and 8 kPa. The temperature at which the maximum growth rate occurs decreased with increasing total pressure. With increasing the substrate temperature and total pressure, the apparent grain size increased and the surface morphology showed a rough, cauliflower-like structure.

  17. Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as templates

    NASA Astrophysics Data System (ADS)

    Han, Weiqiang; Redlich, Philipp; Ernst, Frank; Rühle, Manfred

    1999-09-01

    A method is described to synthesize silicon carbide (SiC)-filled boron nitride (BN) nanotubes (NT) simultaneously in high yield by using carbon nanotubes (CNTs) as templates. This method combines both carbon nanotube-substitution reaction and confined reaction. Through the CNT-substitution reaction, CNTs react with boron oxide vapor in the presence of nitrogen gas to form BN NTs, whose diameters and lengths are similar to those of the starting CNTs. The formation of the SiC filling is proceeded by the penetration of SiO vapor into the cavity of the nanotubes and subsequent reaction of SiO vapor with the inner carbon layers or volatile carbon mono-oxide in the interior to form SiC nanowires. The filled length can be up to the entire length of the nanotubes. SiC-filled (BN)xCy nanotubes also form in the product.

  18. Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers

    NASA Astrophysics Data System (ADS)

    Majety, S.; Li, J.; Cao, X. K.; Dahal, R.; Lin, J. Y.; Jiang, H. X.

    2012-10-01

    Hexagonal boron nitride (hBN) possesses extraordinary potential for solid-state neutron detector applications. This stems from the fact that the boron-10 (10B) isotope has a capture cross-section of 3840 barns for thermal neutrons that is orders of magnitude larger than other isotopes. Epitaxial layers of hBN have been synthesized by metal organic chemical vapor deposition (MOCVD). Experimental measurements indicated that the thermal neutron absorption coefficient and length of natural hBN epilayers are about 0.0036 μm-1 and 277 μm, respectively. To partially address the key requirement of long carrier lifetime and diffusion length for a solid-state neutron detector, micro-strip metal-semiconductor-metal detectors were fabricated and tested. A good current response was generated in these detectors using continuous irradiation with a thermal neutron beam, corresponding to an effective conversion efficiency approaching ~80% for absorbed neutrons.

  19. Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride

    PubMed Central

    Chen, Chunlin; Wang, Zhongchang; Kato, Takeharu; Shibata, Naoya; Taniguchi, Takashi; Ikuhara, Yuichi

    2015-01-01

    Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials. PMID:25687399

  20. Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride.

    PubMed

    Chen, Chunlin; Wang, Zhongchang; Kato, Takeharu; Shibata, Naoya; Taniguchi, Takashi; Ikuhara, Yuichi

    2015-02-17

    Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials.

  1. High pressure phases produced by low energy ion implantation with reference to cubic boron nitride

    NASA Astrophysics Data System (ADS)

    McKenzie, D. R.; McFall, W. D.; Smith, H.; Higgins, B.; Boswell, R. W.; Durandet, A.; James, B. W.; Falconer, I. S.

    1995-12-01

    Cubic boron nitride (c-BN) is a high quality abrasive material with hardness second only to diamond and with good oxidation and solubility properties. A new ion plating technique using the helicon wave plasma source combined with electron beam evaporation has been developed for the large area, high rate deposition of this material. The apparatus is fitted with a multiwavelength in situ ellipsometer for monitoring growth. The optical properties of both c-BN and h-BN films have been measured in situ and the operating conditions which produce a high growth rate of c-BN have been determined. A simple model for the movement of boron through the system has been developed and compared to experiment.

  2. Picosecond laser structuration under high pressures: Observation of boron nitride nanorods

    SciTech Connect

    Museur, Luc; Petitet, Jean-Pierre; Kanaev, Andrei V.; Michel, Jean-Pierre; Marine, Wladimir; Anglos, Demetrios; Fotakis, Costas

    2008-11-01

    We report on picosecond UV-laser processing of hexagonal boron nitride (BN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product-BN nanorods-takes place. This process is triggered on structural defects, which number density strongly decreases upon recrystallization. Nonlinear photon absorption by adsorbed nitrogen molecules is suggested to mediate the nucleation growth. High pressure is responsible for the confinement and strong backscattering of ablation products. A strong surface structuring also appears at longer 150 ps laser irradiation in similar experimental conditions. However, the transformed product in this case is amorphous strongly contaminated by boron suboxides B{sub x}O{sub y}.

  3. Boron nitride nanotube-enhanced osteogenic differentiation of mesenchymal stem cells.

    PubMed

    Li, Xia; Wang, Xiupeng; Jiang, Xiangfen; Yamaguchi, Maho; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

    2016-02-01

    The interaction between boron nitride nanotubes (BNNTs) layer and mesenchymal stem cells (MSCs) is evaluated for the first time in this study. BNNTs layer supports the attachment and growth of MSCs and exhibits good biocompatibility with MSCs. BNNTs show high protein adsorption ability, promote the proliferation of MSCs and increase the secretion of total protein by MSCs. Especially, BNNTs enhance the alkaline phosphatase (ALP) activity as an early marker of osteoblasts, ALP/total protein and osteocalcin (OCN) as a late marker of osteogenic differentiation, which shows that BNNTs can enhance osteogenesis of MSCs. The release of trace boron and the stress on cells exerted by BNNTs with a fiber structure may account for the enhanced differentiation of MSCs into osteoblasts. Therefore BNNTs are potentially useful for bone regeneration in orthopedic applications.

  4. Specific heat capacity and density of multi-walled boron nitride nanotubes by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhi, Chunyi; Bando, Yoshio; Tang, Chengchun; Golberg, Dmitri

    2011-01-01

    We report on the basic physical quantities of boron nitride nanotubes (BNNTs), namely specific heat capacity and density, which have not been measured to date. A series of differential scanning calorimetry experiments were performed, and specific heat capacity was calculated for multi-walled BNNTs synthesized by chemical vapor deposition using boron and metal oxide as precursor. Very close specific heat capacity values were revealed for BNNTs and a BN powder of hexagonal (h-BN) phase. Densities of BNNTs were measured through density analyses of their epoxy composites. Our work is important as far as bulk properties of large amounts of BNNTs are crucial, for example, thermal property and density prediction for composite materials with BNNTs embedded.

  5. Synthesis of boron-nitride nanocages and fullerenes in a BN plasma

    NASA Astrophysics Data System (ADS)

    Krstic, Predrag; Han, Longtao

    2016-09-01

    Synthesis of boron-nitride fullerenes, nano-cocoons and nano-cages by self-organization of BN molecules in a high-temperature plasma is simulated using the DFT tight-binding method. No boron nano-cluster or catalysts nano-particle are needed to initiate this process. By varying the plasma temperature and the BN density, as well as the time of growth we can simulate growth of he sp2 cages of various shape, size and quality. Role of hydrogen in HBNH and H2BNH2 synthesis is also considered. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  6. Lattice mismatch induced ripples and wrinkles in planar graphene/boron nitride superlattices

    SciTech Connect

    Nandwana, Dinkar; Ertekin, Elif

    2015-06-21

    A continuum theory to describe periodic ripple formation in planar graphene/boron nitride superlattices is formulated. Due to the lattice mismatch between the two materials, it is shown that flat superlattices are unstable with respect to ripple formation of appropriate wavelengths. A competition between bending energy and transverse stretching energy gives rise to an optimal ripple wavelength that depends on the superlattice pitch. The optimal wavelengths predicted by the continuum theory are in good agreement with atomic scale total energy calculations previously reported by Nandwana and Ertekin [Nano Lett. 15, 1468 (2015)].

  7. Interlayer locking and atomic-scale friction in commensurate small-diameter boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Shin, Homin; Kim, Keun Su; Simard, Benoit; Klug, Dennis D.

    2017-02-01

    Density functional theory applied to small-diameter boron nitride nanotubes (BNNTs) finds out-of-plane structural buckling in contrast to large-diameter tubes that exhibit faceting. Buckling significantly affects interlayer interactions in commensurate double-walled BNNTs. Energy corrugation amplitudes in relative motions of BNNT walls change up to fourfold, depending on interlayer registry relaxation, in marked contrast to carbon nanotubes. Large differences between relaxed and unrelaxed energy corrugations of BNNTs could yield energy dissipation via the strain-induced anelastic relaxation of interlayer locking (or "lattice kinks"), which can be exploited for mechanical damping applications.

  8. Spring Constants for Stacks of Curved Leaves of Pyrolytic Boron Nitride

    NASA Technical Reports Server (NTRS)

    Kaforey, M. L.; Deeb, C. W.; Matthiesen, D. H.

    1999-01-01

    Stacks of curved leaves of pyrolytic boron nitride (PBN) were deflected and the force versus deflection data was recorded. From this data, the spring constant for a given spring geometry (radius of curvature of a leaf, width of a leaf, thickness of a leaf, and number of leaves in the stack) was determined. These experiments were performed at room temperature, 500 C and 1000 C. However, temperature was not found to affect the spring constant. The measured values were generally within one order of magnitude of predictions made using a previously derived equation for a simply supported cylindrical section with a line force at the center.

  9. Effect of reaction time on the characteristics of catalytically grown boron nitride nanotubes

    SciTech Connect

    Mohamed, Norani Muti E-mail: pervaiz-pas@yahoo.com E-mail: zainabh@petronas.com.my; Ahmad, Pervaiz E-mail: pervaiz-pas@yahoo.com E-mail: zainabh@petronas.com.my; Saheed, Mohamed Shuaib Mohamed E-mail: pervaiz-pas@yahoo.com E-mail: zainabh@petronas.com.my; Burhanudin, Zainal Arif E-mail: pervaiz-pas@yahoo.com E-mail: zainabh@petronas.com.my

    2014-10-24

    The paper reports on the growth of boron nitride nanotube (BNNTs) on Si substrate by catalytic chemical vapor deposition technique and the effect of reaction time and temperature on the size and purity were investigated. Scanning electron microscopy image revealed the bamboo-like BNNTs of multiwalled type with interlayer spacing of 0.34 nm. EDX analysis described the presence of a small percentage of Mg in the sample, indicating the combination of base-tip growth model for the sample synthesized at 1200°C. The reaction time has an effect of extending the length of the BNNTs until the catalyst is oxidized or covered by growth precursor.

  10. Nanoscale Bending of Multilayered Boron Nitride and Graphene Ribbons: Experiment and Objective Molecular Dynamics Calculations

    NASA Astrophysics Data System (ADS)

    Nikiforov, Ilia; Tang, Dai-Ming; Wei, Xianlong; Dumitricǎ, Traian; Golberg, Dmitri

    2012-07-01

    By combining experiments performed on nanoribbons in situ within a high-resolution TEM with objective molecular dynamics simulations, we reveal common mechanisms in the bending response of few-layer-thick hexagonal boron nitride and graphene nanoribbons. Both materials are observed forming localized kinks in the fully reversible bending experiments. Microscopic simulations and theoretical analysis indicate platelike bending behavior prior to kinking, in spite of the possibility of interlayer sliding, and give the critical curvature for the kinking onset. This behavior is distinct from the rippling and kinking of multi- and single-wall nanotubes under bending. Our findings have implications for future study of nanoscale layered materials, including nanomechanical device design.

  11. Topologically-driven valley polarization in twisted graphene/hexagonal boron nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Basile, Leonardo; Idrobo, Juan Carlos

    Valley polarization, that is, selective electronic localization in a momentum valley, has been proposed on materials presenting either a strong spin-orbit coupling (SOC) or with a weak SOC but in the presence of electric and magnetic fields. In this talk, we identify a non-centro symmetric system which can also present valley polarization purely by topological means without the necessity of SOC. We find that twisted bilayers of graphene/hexagonal boron nitride heterostructures have different absorption for right- and left- circular polarized light, indicating valley polarization. This induced polarization occurs due to band folding of the electronic bands, i.e., it has a topological origin.

  12. Robust half-metallic ferromagnetism and curvature dependent magnetic coupling in fluorinated boron nitride nanotubes.

    PubMed

    Guo, Chunsheng; Zhou, Yu; Shi, Xin-Qiang; Gan, Li-Yong; Jiang, Hong; Zhao, Yong

    2016-04-28

    The fluorinated boron nitride (F-BN) nanostructures are found to be fully spin polarized and half-metallic by means of first-principles calculations based on the Heyd-Scuseria-Ernzerhof hybrid functional. It is found that the full spin polarization and 1 μB local moment in F-BN nanotubes are independent of tube radius and it is also robust in planar ribbons and sheets. The long-ranged ferromagnetic coupling between local moments decreases with decreasing tube radius. This suggests that F-BN systems with small local curvatures could be more easily experimentally observed and have greater potential applications in spin devices.

  13. Transport and particle-hole asymmetry in graphene on boron nitride

    NASA Astrophysics Data System (ADS)

    DaSilva, Ashley M.; Jung, Jeil; Adam, Shaffique; MacDonald, Allan H.

    2015-06-01

    All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moiré patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a previously derived effective Hamiltonian for the π bands of graphene on hBN to address the carrier dependence of transport properties, concentrating on the conductivity features at four electrons and four holes per unit cell. These transport features measure the strength of Bragg scattering of π electrons off the moiré pattern, and they exhibit a striking particle-hole asymmetry that we trace to specific features of the effective Hamiltonian that we interpret physically.

  14. Thermal equation of state of cubic boron nitride: Implications for a high-temperature pressure scale

    SciTech Connect

    Goncharov, Alexander F.; Crowhurst, Jonathan C.; Dewhurst, John K.; Sharma, Sangeeta; Sanloup, Chrystele; Gregoryanz, Eugene; Guignot, Nicolas; Mezouar, Mohamed

    2007-06-01

    The equation of state of cubic boron nitride (cBN) has been determined to a maximum temperature of 3300 K at a simultaneous static pressure of up to more than 70 GPa. Ab initio calculations to 80 GPa and 2000 K have also been performed. Our experimental data can be reconciled with theoretical results and with the known thermal expansion at 1 bar if we assume a small increase in pressure during heating relative to that measured at ambient temperature. The present data combined with the Raman measurements we presented earlier form the basis of a high-temperature pressure scale that is good to at least 3300 K.

  15. The deposition of boron nitride and carbon films on silica glass fibers

    SciTech Connect

    Smith, W.L.; Michalske, T.A.; Rye, R.R.

    1993-11-01

    A chemical vapor deposition technique is used to produce amorphous boron nitride and carbon thin films on high strength silica glass fibers. In this method, the fiber is drawn under ultra high vacuum conditions and low pressure process gases, in the presence of a hot tungsten filament, are used to grow films at low substrate temperatures. Films deposited with this technique do not degrade the intrinsic pristine strength of the silica fibers under dry conditions and, when stressed in chemically aggressive environments, act as effective barrier coatings.

  16. Utilization of multiwalled boron nitride nanotubes for the reinforcement of lightweight aluminum ribbons

    PubMed Central

    2013-01-01

    Multiwalled boron nitride nanotubes (BNNTs) have very attractive mechanical and thermal properties, e.g., elasticity, tensile strength, and high resistance to oxidation, and may be considered as ideal reinforcing agents in lightweight metal matrix composites. Herein, for the first time, Al-BNNT ribbons with various BNNT contents (up to 3 wt.%) were fabricated via melt spinning in an argon atmosphere. BNNTs were randomly dispersed within a microcrystalline Al matrix under ribbon casting and led to more than doubling of room-temperature ultimate tensile strength of the composites compared to pure Al ribbons produced at the similar conditions. PMID:23279813

  17. Utilization of multiwalled boron nitride nanotubes for the reinforcement of lightweight aluminum ribbons

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Maho; Pakdel, Amir; Zhi, Chunyi; Bando, Yoshio; Tang, Dai-Ming; Faerstein, Konstantin; Shtansky, Dmitry; Golberg, Dmitri

    2013-01-01

    Multiwalled boron nitride nanotubes (BNNTs) have very attractive mechanical and thermal properties, e.g., elasticity, tensile strength, and high resistance to oxidation, and may be considered as ideal reinforcing agents in lightweight metal matrix composites. Herein, for the first time, Al-BNNT ribbons with various BNNT contents (up to 3 wt.%) were fabricated via melt spinning in an argon atmosphere. BNNTs were randomly dispersed within a microcrystalline Al matrix under ribbon casting and led to more than doubling of room-temperature ultimate tensile strength of the composites compared to pure Al ribbons produced at the similar conditions.

  18. Near-Field Infrared Pump-Probe Imaging of Surface Phonon Coupling in Boron Nitride Nanotubes.

    PubMed

    Gilburd, Leonid; Xu, Xiaoji G; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

    2016-01-21

    Surface phonon modes are lattice vibrational modes of a solid surface. Two common surface modes, called longitudinal and transverse optical modes, exhibit lattice vibration along or perpendicular to the direction of the wave. We report a two-color, infrared pump-infrared probe technique based on scattering type near-field optical microscopy (s-SNOM) to spatially resolve coupling between surface phonon modes. Spatially varying couplings between the longitudinal optical and surface phonon polariton modes of boron nitride nanotubes are observed, and a simple model is proposed.

  19. A boron nitride CW Carbon dioxide waveguide laser for optically pumping heavy water

    NASA Astrophysics Data System (ADS)

    Evans, D. E.; Prunty, S. L.; Sexton, M. C.

    1980-01-01

    Boron nitride has been used to fabricate a 1 cm 3 CW CO 2 capillary waveguide laser which operates at 130 torr gas pressure, and generates 7 W of 10 μm radiation untuned and up to 3 W on individual grating-selected emission lines. Pressure broadened gain profiles are limited to ±200 MHz from line centre by longitudinal cavity mode spacing. Increased absorption of the 9μm band R(22) line by D 2O vapour is observed as this line is tuned across the broadened gain profile towards its D 2O absorption.

  20. 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

    NASA Astrophysics Data System (ADS)

    Soltani, A.; Barkad, H. A.; Mattalah, M.; Benbakhti, B.; De Jaeger, J.-C.; Chong, Y. M.; Zou, Y. S.; Zhang, W. J.; Lee, S. T.; BenMoussa, A.; Giordanengo, B.; Hochedez, J.-F.

    2008-02-01

    Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing.

  1. Nonresonant inelastic x-ray scattering study of cubic boron nitride

    SciTech Connect

    Galambosi, S.; Soininen, J. A.; Haemaelaeinen, K.; Shirley, Eric L.; Kao, C.-C.

    2001-07-01

    The dynamic structure factor of cubic boron nitride has been measured using nonresonant inelastic x-ray scattering. The experimental data are compared with the results of a recently developed ab initio calculation scheme, which takes into account the interaction between the excited electron and the hole. The agreement between the experiment and theory is good over an extended momentum transfer range, which emphasizes the importance of proper inclusion of the electron-hole interaction. The results are also compared with a reflectance measurement that represents the zero-momentum-transfer limit. The complementary nature of these different experimental methods is discussed in view of the ab initio calculations.

  2. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    SciTech Connect

    Gaskell, J.; Fromhold, T. M.; Greenaway, M. T.; Eaves, L.; Novoselov, K. S.; Mishchenko, A.; Geim, A. K.

    2015-09-07

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

  3. Static tensile and tensile creep testing of four boron nitride coated ceramic fibers at elevated temperatures

    NASA Technical Reports Server (NTRS)

    Coguill, Scott L.; Adams, Donald F.; Zimmerman, Richard S.

    1989-01-01

    Six types of uncoated ceramic fibers were static tensile and tensile creep tested at various elevated temperatures. Three types of boron nitride coated fibers were also tested. Room temperature static tensile tests were initially performed on all fibers, at gage lengths of 1, 2, and 4 inches, to determine the magnitude of end effects from the gripping system used. Tests at one elevated temperature, at gage lengths of 8 and 10 inches, were also conducted, to determine end effects at elevated temperatures. Fiber cross sectional shapes and areas were determined using scanning electron microscopy. Creep testing was typically performed for 4 hours, in an air atmosphere.

  4. Effective synthesis of surface-modified boron nitride nanotubes and related nanostructures and their hydrogen uptake

    NASA Astrophysics Data System (ADS)

    Terao, T.; Bando, Y.; Mitome, M.; Kurashima, K.; Zhi, C. Y.; Tang, C. C.; Golberg, D.

    2008-05-01

    The present study is focused on the synthesis of boron nitride nanotubes (BNNTs) with an entirely modified surface structure. We succeeded in the BNNT surface modification by using highly reactive SO 2 gas generated in-situ during the tube synthesis. The obtained BNNTs have a high surface area, which is significantly larger than that of standard well-structured BNNT. Therefore, the synthesized nanomaterial is advantageous for the gas adsorption and could be envisaged as a prospective hydrogen-storage material. Herein we report on the preliminary results of the hydrogen accumulation experimental runs.

  5. Synthesis of boron nitride multi-walled nanotubes by laser ablation technique

    NASA Astrophysics Data System (ADS)

    Naumov, V. G.; Kosyrev, F. K.; Vostrikov, V. G.; Arutyunyan, N. R.; Obraztsova, E. D.; Konov, V. I.; Jiang, Hua; Nasibulin, A.; Kauppinen, E.

    2009-05-01

    Carbon nanotubes are known as prospective material for the optoelectronics, vacuum electronics, non-linear optics and for the composite material synthesis. Boron nitride nanotubes (BNNTs) were obtained only recently. It is expected that these nanotubes possess the unique properties. BN is much more chemically inert than carbon. Its oxidation temperature is above 1000°C as the graphite is totally oxidized already at 650°C. BNNTs are wide-gap semiconductors with the 6 eV gap. In case of the introducing of the carbon atoms into the BN nanotube wall its bandgap may be varied in wide range. This property is important for the UV optics.

  6. Boron Nitride Nanotubes: Recent Advances in Their Synthesis, Functionalization, and Applications.

    PubMed

    Lee, Chee Huei; Bhandari, Shiva; Tiwari, Bishnu; Yapici, Nazmiye; Zhang, Dongyan; Yap, Yoke Khin

    2016-07-15

    A comprehensive overview of current research progress on boron nitride nanotubes (BNNTs) is presented in this article. Particularly, recent advancements in controlled synthesis and large-scale production of BNNTs will first be summarized. While recent success in mass production of BNNTs has opened up new opportunities to implement the appealing properties in various applications, concerns about product purity and quality still remain. Secondly, we will summarize the progress in functionalization of BNNTs, which is the necessary step for their applications. Additionally, selected potential applications in structural composites and biomedicine will be highlighted.

  7. Boron nitride-MWCNT/epoxy hybrid nanocomposites: Preparation and mechanical properties

    NASA Astrophysics Data System (ADS)

    Ulus, Hasan; Üstün, Tugay; Eskizeybek, Volkan; Şahin, Ömer Sinan; Avcı, Ahmet; Ekrem, Mürsel

    2014-11-01

    In this study, production and mechanical properties of hybrid nanocomposites have been investigated. Hybrid nanocomposites are consisting of boron nitride nanoplatelets (BN) and multiwall carbon nanotubes (MWCNT) embedded in epoxy resin. The BN and MWCNT were mixed to epoxy resin in different weight fractions and mixtures were utilized for tensile test specimen production. The synthesized BN and produced hybrid nanocomposites were characterized by SEM, TEM, XRD, FT-IR and TGA analyses. The elasticity modulus and tensile strength values were obtained via tensile tests. The fracture morphologies were investigated after tensile test by means of scanning electron microscopy.

  8. Effect of reaction time on the characteristics of catalytically grown boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Mohamed, Norani Muti; Ahmad, Pervaiz; Saheed, Mohamed Shuaib Mohamed; Burhanudin, Zainal Arif

    2014-10-01

    The paper reports on the growth of boron nitride nanotube (BNNTs) on Si substrate by catalytic chemical vapor deposition technique and the effect of reaction time and temperature on the size and purity were investigated. Scanning electron microscopy image revealed the bamboo-like BNNTs of multiwalled type with interlayer spacing of 0.34 nm. EDX analysis described the presence of a small percentage of Mg in the sample, indicating the combination of base-tip growth model for the sample synthesized at 1200°C. The reaction time has an effect of extending the length of the BNNTs until the catalyst is oxidized or covered by growth precursor.

  9. Formation and atomic structure of boron nitride nanotubes with a cup-stacked structure

    NASA Astrophysics Data System (ADS)

    Oku, Takeo; Koi, Naruhiro; Suganuma, Katsuaki; Belosludov, Rodion V.; Kawazoe, Yoshiyuki

    2007-08-01

    Boron nitride (BN) nanotubes were synthesized by annealing Fe 4N/B powder at 1000 ∘C for 1 h in a nitrogen gas atmosphere, and large amounts of BN nanotubes with a cup-stacked structure were obtained after a purification process. The atomic structures of the cup-stacked BN nanotubes were investigated by high-resolution electron microscopy as well as molecular mechanics calculations, and compared with double walled BN nanotubes. The present results indicate that the cup-stacked structure with a cone angle of 20 ∘ is more stable than the structure with an angle of 38 ∘ and ordinary nanotube structures.

  10. Atomic oxygen effects on boron nitride and silicon nitride: A comparison of ground based and space flight data

    NASA Technical Reports Server (NTRS)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) were evaluated in a low Earth orbit (LEO) flight experiment and in a ground based simulation facility. In both the inflight and ground based experiments, these materials were coated on thin (approx. 250A) silver films, and the electrical resistance of the silver was measured in situ to detect any penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the inflight and ground based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the inflight or ground based experiments. The ground based results show good qualitative correlation with the LEO flight results, indicating that ground based facilities such as the one at Los Alamos National Lab can reproduce space flight data from LEO.

  11. A comparison of ground-based and space flight data: Atomic oxygen reactions with boron nitride and silicon nitride

    NASA Technical Reports Server (NTRS)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.; Koontz, S. L.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) have been studied in low Earth orbit (LEO) flight experiments and in a ground-based simulation facility at Los Alamos National Laboratory. Both the in-flight and ground-based experiments employed the materials coated over thin (approx 250 Angstrom) silver films whose electrical resistance was measured in situ to detect penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the in-flight and ground-based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the in-flight or ground-based experiments. The ground-based results show good qualitative correlation with the LEO flight results, thus validating the simulation fidelity of the ground-based facility in terms of reproducing LEO flight results.

  12. Modeling of Laser Vaporization and Plume Chemistry in a Boron Nitride Nanotube Production Rig

    NASA Technical Reports Server (NTRS)

    Gnoffo, Peter A.; Fay, Catharine C.

    2012-01-01

    Flow in a pressurized, vapor condensation (PVC) boron nitride nanotube (BNNT) production rig is modeled. A laser provides a thermal energy source to the tip of a boron ber bundle in a high pressure nitrogen chamber causing a plume of boron-rich gas to rise. The buoyancy driven flow is modeled as a mixture of thermally perfect gases (B, B2, N, N2, BN) in either thermochemical equilibrium or chemical nonequilibrium assuming steady-state melt and vaporization from a 1 mm radius spot at the axis of an axisymmetric chamber. The simulation is intended to define the macroscopic thermochemical environment from which boron-rich species, including nanotubes, condense out of the plume. Simulations indicate a high temperature environment (T > 4400K) for elevated pressures within 1 mm of the surface sufficient to dissociate molecular nitrogen and form BN at the base of the plume. Modifications to Program LAURA, a finite-volume based solver for hypersonic flows including coupled radiation and ablation, are described to enable this simulation. Simulations indicate that high pressure synthesis conditions enable formation of BN vapor in the plume that may serve to enhance formation of exceptionally long nanotubes in the PVC process.

  13. Low-Energy Sputtering Studies of Boron Nitride with Xenon Ions

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    Sputtering of boron nitride with xenon ions was investigated using secondary ion (SIMS) and secondary neutral (SNMS) mass spectrometry. The ions generated from the ion gun were incident on the target at an angle of 50' with respect to the surface'normal. The energy of ions ranged from 100 eV to 3 keV. A flood electron gun was used to neutralize the positive charge build-up on the target surface. The intensities of sputtered neutral and charged particles, including single atoms, molecules, and clusters, were measured as a function of ion energy. Positive SIMS spectra were dominated by the two boron isotopes whereas BN- and B- were the two major constituents of the negative SIMS spectra. Nitrogen could be detected only in the SNMS spectra. The intensity-energy curves of the sputtered particles were similar in shape. The knees in P-SIMS and SNMS intensity-energy curves appear at around I keV which is significantly higher that 100 to 200 eV energy range at which knees appear in the sputtering of medium and heavy elements by ions of argon and xenon. This difference in the position of the sputter yield knee between boron nitride and heavier targets is due to the reduced ion energy differences. The isotopic composition of secondary ions of boron were measured by bombarding boron nitride with xenon ions at energies ranging from 100 eV to 1.5 keV using a quadrupole mass spectrometer. An ion gun was used to generate the ion beam. A flood electron gun was used to neutralize the positive charge buildup on the target surface. The secondary ion flux was found to be enriched in heavy isotopes at lower incident ion energies. The heavy isotope enrichment was observed to decrease with increasing primary ion energy. Beyond 350 eV, light isotopes were sputtered preferentially with the enrichment increasing to an asymptotic value of 1.27 at 1.5 keV. The trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy

  14. High-Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

    DOE PAGES

    Nocua, José E.; Piazza, Fabrice; Weiner, Brad R.; ...

    2009-01-01

    Boron nimore » tride (BN) nanostructures are structural analogues of carbon nanostructures but have completely different bonding character and structural defects. They are chemically inert, electrically insulating, and potentially important in mechanical applications that include the strengthening of light structural materials. These applications require the reliable production of bulk amounts of pure BN nanostructures in order to be able to reinforce large quantities of structural materials, hence the need for the development of high-yield synthesis methods of pure BN nanostructures. Using borazine ( B 3 N 3 H 6 ) as chemical precursor and the hot-filament chemical vapor deposition (HFCVD) technique, pure BN nanostructures with cross-sectional sizes ranging between 20 and 50 nm were obtained, including nanoparticles and nanofibers. Their crystalline structure was characterized by (XRD), their morphology and nanostructure was examined by (SEM) and (TEM), while their chemical composition was studied by (EDS), (FTIR), (EELS), and (XPS). Taken altogether, the results indicate that all the material obtained is stoichiometric nanostructured BN with hexagonal and rhombohedral crystalline structure.« less

  15. Hexagonal boron nitride cover on Pt(111): a new route to tune molecule-metal interaction and metal-catalyzed reactions.

    PubMed

    Zhang, Yanhong; Weng, Xuefei; Li, Huan; Li, Haobo; Wei, Mingming; Xiao, Jianping; Liu, Zhi; Chen, Mingshu; Fu, Qiang; Bao, Xinhe

    2015-05-13

    In heterogeneous catalysis molecule-metal interaction is often modulated through structural modifications at the surface or under the surface of the metal catalyst. Here, we suggest an alternative way toward this modulation by placing a two-dimensional (2D) cover on the metal surface. As an illustration, CO adsorption on Pt(111) surface has been studied under 2D hexagonal boron nitride (h-BN) overlayer. Dynamic imaging data from surface electron microscopy and in situ surface spectroscopic results under near ambient pressure conditions confirm that CO molecules readily intercalate monolayer h-BN sheets on Pt(111) in CO atmosphere but desorb from the h-BN/Pt(111) interface even around room temperature in ultrahigh vacuum. The interaction of CO with Pt has been strongly weakened due to the confinement effect of the h-BN cover, and consequently, CO oxidation at the h-BN/Pt(111) interface was enhanced thanks to the alleviated CO poisoning effect.

  16. Microstructure Analysis of Boron Nanotubes

    DTIC Science & Technology

    2012-05-01

    boron nitride nanotube and nanoparticles in thin film boron nitride prepared by CVD method. Electron micrographs show single...walled nanotubes containing these nonoparticles. The electron diffraction pattern confirms this boron nitride has a hexagonal crystal structure. 15... boron nitride thin film CONCLUSIONS The boron evaporated thin film revealed a large number of nanotubes and nanoparticles. These nanotubes are 25

  17. Oxygen- and Lithium-Doped Hybrid Boron-Nitride/Carbon Networks for Hydrogen Storage.

    PubMed

    Shayeganfar, Farzaneh; Shahsavari, Rouzbeh

    2016-12-20

    Hydrogen storage capacities have been studied on newly designed three-dimensional pillared boron nitride (PBN) and pillared graphene boron nitride (PGBN). We propose these novel materials based on the covalent connection of BNNTs and graphene sheets, which enhance the surface and free volume for storage within the nanomaterial and increase the gravimetric and volumetric hydrogen uptake capacities. Density functional theory and molecular dynamics simulations show that these lithium- and oxygen-doped pillared structures have improved gravimetric and volumetric hydrogen capacities at room temperature, with values on the order of 9.1-11.6 wt % and 40-60 g/L. Our findings demonstrate that the gravimetric uptake of oxygen- and lithium-doped PBN and PGBN has significantly enhanced the hydrogen sorption and desorption. Calculations for O-doped PGBN yield gravimetric hydrogen uptake capacities greater than 11.6 wt % at room temperature. This increased value is attributed to the pillared morphology, which improves the mechanical properties and increases porosity, as well as the high binding energy between oxygen and GBN. Our results suggest that hybrid carbon/BNNT nanostructures are an excellent candidate for hydrogen storage, owing to the combination of the electron mobility of graphene and the polarized nature of BN at heterojunctions, which enhances the uptake capacity, providing ample opportunities to further tune this hybrid material for efficient hydrogen storage.

  18. Cantilevered single walled boron nitride nanotube based nanomechanical resonators of zigzag and armchair forms

    NASA Astrophysics Data System (ADS)

    Panchal, Mitesh B.; Upadhyay, S. H.

    2013-05-01

    In this paper, the dynamic response analysis of single walled boron nitride nanotubes (SWBNNTs) has been done using a finite element method (FEM). To this end, different types of zigzag and armchair layups of SWBNNTs are considered with cantilever configuration to analyze the mass detection application, as a SWBNNT based nanomechanical resonator. Using three dimensional elastic beams and point masses, single walled boron nitride nanotubes are approximated as atomistic finite element models. Implementing the finite element simulation approach, the resonant frequency of cantilevered nanotubes obtained and observed the shifts in it mainly due to an additional nanoscale mass to the nanotube tip. The effect on resonant frequency shift due to dimensional variation in terms of length as well as diameter is explored by considering different aspect ratios of nanotubes. The effect of intermediate landing positions of added mass on resonant frequency shift is also analyzed by considering excitations of different modes of vibration. Also, the effect of chiralities compared for resonant frequency variations to check the effect on sensitivity due to different forms of SWBNNTs. The present approach is found to be effectual in terms of dealing different chiralities, boundary conditions and consideration of added mass to analyze the dynamic behavior of cantilevered SWBNNT based nanomechanical resonators. The simulation results are compared with the analytical results based on continuum mechanics and found in good agreement as one of the toolkits for systematic analysis approach for novel design of SWBNNT based nanomechanical resonators for wide range of applications.

  19. Variations in Crystalline Structures and Electrical Properties of Single Crystalline Boron Nitride Nanosheets.

    PubMed

    Aldalbahi, Ali; Zhou, Andrew Feng; Feng, Peter

    2015-11-13

    We report the studies of (1) the basic mechanism underlying the formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulsed laser plasma deposition (PLPD) technique, (2) the variation in the crystalline structure at the edges of the hexagonal boron nitride (h-BN) nanosheets, and (3) the basic electrical properties related to the BNNSs tunneling effect and electrical breakdown voltage. The nanoscale morphologies of BNNSs are characterized using scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM). The results show that each sample consisted of a number of transparent BNNSs that partially overlapped one another. Varying the deposition duration yielded different thicknesses of sample but did not affect the morphology, structure, and thickness of individual BNNSs pieces. Analysis of the SEM and HRTEM data revealed changes in the spatial period of the B3-N3 hexagonal structures and the interlayer distance at the edge of the BNNSs, which occurred due to the limited number of atomic layers and was confirmed further by x-ray diffraction (XRD) study. The experimental results clearly indicate that the values of the electrical conductivities of the super-thin BNNSs and the effect of temperature relied strongly on the direction of observation.

  20. Variations in Crystalline Structures and Electrical Properties of Single Crystalline Boron Nitride Nanosheets

    NASA Astrophysics Data System (ADS)

    Aldalbahi, Ali; Zhou, Andrew Feng; Feng, Peter

    2015-11-01

    We report the studies of (1) the basic mechanism underlying the formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulsed laser plasma deposition (PLPD) technique, (2) the variation in the crystalline structure at the edges of the hexagonal boron nitride (h-BN) nanosheets, and (3) the basic electrical properties related to the BNNSs tunneling effect and electrical breakdown voltage. The nanoscale morphologies of BNNSs are characterized using scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM). The results show that each sample consisted of a number of transparent BNNSs that partially overlapped one another. Varying the deposition duration yielded different thicknesses of sample but did not affect the morphology, structure, and thickness of individual BNNSs pieces. Analysis of the SEM and HRTEM data revealed changes in the spatial period of the B3-N3 hexagonal structures and the interlayer distance at the edge of the BNNSs, which occurred due to the limited number of atomic layers and was confirmed further by x-ray diffraction (XRD) study. The experimental results clearly indicate that the values of the electrical conductivities of the super-thin BNNSs and the effect of temperature relied strongly on the direction of observation.