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Sample records for 2d metal-insulator transition

  1. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

    SciTech Connect

    SARACHIK, MYRIAM P

    2015-02-20

    STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectric power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.

  2. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  3. The Two-Commponent Model and 2d Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Castner, Theodore G.

    2004-03-01

    Fermi liquid theory for the 2d MIT is extended to include the soft correlation gap (CG) in the density-of-states N(E) from carrier interactions [N(E)α(E-E_F)^t] producing a minimum in N(E) at E_F. The results are consistent with the scaling form g=g_cexp(xT_o/T) in a limited T-regime, but not as Tarrow0 ruling out the perfect conductor scenario. The two-component model of itinerant plus localized electrons n_i+n_loc=n=n_c(1+x) for n>nc is an essential feature and allows a full explanation of the T-dependence of the metallic resistivity ratio ρ_i(T)/ρ_i(0) [ρ_i= 1/(σ-σ_c)] including the maximum at T_max. The results explain the Hanein et al. data^1 for p-type GaAs and show p_i(T)/p_i(0)=1+T/T_phi in a restricted T-range where T_phi=xTc [T_c=E_c/k, E_c=mobility edge] as x=p/p_c-1 goes to 0. The correction to EF from the soft CG [of width |Delta_c] yields a constant ratio E_F/Δc as x goes to 0. The origin of the nonuniversal gc [ρc at x=0] and implications for the beta function β(g)=ln(g/g_c) and single particle scaling will be discussed. 1. Y. Hanein et al., PRL80, 1288 (1998);Phys.Rev.B58, R13338 (1998).

  4. Approximating metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Danieli, Carlo; Rayanov, Kristian; Pavlov, Boris; Martin, Gaven; Flach, Sergej

    2015-12-01

    We consider quantum wave propagation in one-dimensional quasiperiodic lattices. We propose an iterative construction of quasiperiodic potentials from sequences of potentials with increasing spatial period. At each finite iteration step, the eigenstates reflect the properties of the limiting quasiperiodic potential properties up to a controlled maximum system size. We then observe approximate Metal-Insulator Transitions (MIT) at the finite iteration steps. We also report evidence on mobility edges, which are at variance to the celebrated Aubry-André model. The dynamics near the MIT shows a critical slowing down of the ballistic group velocity in the metallic phase, similar to the divergence of the localization length in the insulating phase.

  5. Ferroelectric control of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    He, Xu; Jin, Kui-juan; Ge, Chen; Ma, Zhong-shui; Yang, Guo-zhen

    2016-03-01

    We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO3)N/LaNiO3/LaTiO3, in which the BiFeO3 layers are ferroelectric, the LaNiO3 layer is the layer of which the electronic structure is to be tuned, and LaTiO3 layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO3 layer because of the changes of crystal field splitting of the Ni eg orbitals and the bandwidth of the Ni in-plane eg orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

  6. Metal Insulator transition in Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Jovaini, Azita; Fujita, Shigeji; Suzuki, Akira; Godoy, Salvador

    2012-02-01

    MAR12-2011-000262 Abstract Submitted for the MAR12 Meeting of The American Physical Society Sorting Category: 03.9 (T) On the metal-insulator-transition in vanadium dioxide AZITA JOVAINI, SHIGEJI FUJITA, University at Buffalo, SALVADOR GODOY, UNAM, AKIRA SUZUKI, Tokyo University of Science --- Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity _/ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop. Prefer Oral Session X Prefer .

  7. Second critical point in first order metal-insulator transitions.

    PubMed

    Kostadinov, Ivan Z; Patton, Bruce R

    2008-11-28

    For first order metal-insulator transitions we show that, together with the dc conductance zero, there is a second critical point where the dielectric constant becomes zero and further turns negative. At this point the metallic reflectivity sharply increases. The two points can be separated by a phase separation state in a 3D disordered system but may tend to merge in 2D. For illustration we evaluate the dielectric function in a simple effective medium approximation and show that at the second point it turns negative. We reproduce the experimental data on a typical Mott insulator such as MnO, demonstrating the presence of the two points clearly. We discuss other experiments for studies of the phase separation state and a similar phase separation in superconductors with insulating inclusions. PMID:19113498

  8. Metal-insulator transitions in IZO, IGZO, and ITZO films

    SciTech Connect

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  9. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition. PMID:26618885

  10. Metal-insulator transition in films of doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Reich, K. V.; Kramer, Nicolaas J.; Fu, Han; Kortshagen, Uwe R.; Shklovskii, B. I.

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  11. Metal-insulator transition near a superconducting state

    NASA Astrophysics Data System (ADS)

    Kaveh, M.; Mott, N. F.

    1992-03-01

    We show that when the metal-insulation transition occurs near a superconducting state it results in a different critical behavior from that of amorphous metals or uncompensated doped semiconductors. This difference results from the enhancement of the effective electron-electron interaction caused by fluctuations to the superconducting state. This explains the recent experiments of Micklitz and co-workers on amorphous superconducting mixtures Ga-Ar and Bi-Kr.

  12. The metal-insulator transition in magnetite.

    NASA Technical Reports Server (NTRS)

    Cullen, J. R.; Callen, E.

    1972-01-01

    We describe an electronic model for the low temperature transition in magnetite, in which the average number of electrons on a site is non-integral. The solution of the one-dimensional problem is reviewed, and the connection of the model with the Verwey ordering is discussed. Some of the implication of the three dimensional problem are discussed.

  13. Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.

    PubMed

    Shekhawat, Ashivni; Papanikolaou, Stefanos; Zapperi, Stefano; Sethna, James P

    2011-12-30

    Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones. PMID:22243320

  14. Anderson localization effects near the Mott metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Bragança, Helena; Aguiar, M. C. O.; Vučičević, J.; Tanasković, D.; Dobrosavljević, V.

    2015-09-01

    The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.

  15. Anderson metal-insulator transitions with classical magnetic impurities

    NASA Astrophysics Data System (ADS)

    Jung, Daniel; Kettemann, Stefan; Slevin, Keith

    2016-04-01

    We study numerically the effects of classical magnetic impurities on the Anderson metal-insulator transition. We find that a small concentration of Heisenberg impurities enhances the critical disorder amplitude Wc with increasing exchange coupling strength J . The resulting scaling with J is analyzed which supports an anomalous scaling prediction by Wegner due to the combined breaking of time-reversal and spin-rotational symmetry. Moreover, we find that the presence of magnetic impurities lowers the critical correlation length exponent ν and enhances the multifractality parameter α0. The new value of ν improves the agreement with the value measured in experiments on the metal-insulator transition (MIT) in doped semiconductors like phosphor-doped silicon, where a finite density of magnetic moments is known to exist in the vicinity of the MIT. The results are obtained by a finite-size scaling analysis of the geometric mean of the local density of states which is calculated by means of the kernel polynomial method. We establish this combination of numerical techniques as a method to obtain critical properties of disordered systems quantitatively.

  16. The metal-insulator transition in vanadium dioxide nanobeams

    NASA Astrophysics Data System (ADS)

    Cobden, David

    2009-05-01

    Solid materials in which electron-electron correlations are strong can exhibit dramatic phase transitions, at which an abrupt change in the electronic properties occurs with a small accompanying distortion of the lattice. Such transitions could be harnessed to make electronic or optoelectronic devices or sensors embodying different principles from those in present semiconductor technology. A famous example is the metal-insulator transition in vanadium dioxide which occurs at 67 ^oC at ambient pressure. VO2 is a stable, strong material with a simple structure. Unfortunately though, applications and methodical studies of this and other phase transitions are hindered by broadening, hysteresis and mechanical degradation at the transition, caused by the inevitable domain structure. Nanostructures of the material which are smaller than the characteristic domain size do not show these problems. Using devices made from nanobeams of VO2 we have been able to achieve good control of the transition and to determine a number of its properties for the first time. For instance, we find that the metallic phase can be supercooled by more than 50 ^oC; that the resistivity of the insulator in coexistence with the metal is independent of temperature; and that the transition occurs via the intermediate M2 phase. We also study nanoelectromechanical effects where reversible buckling of the nanobeam is coupled to the phase transition, and we investigate methods of controlling the phase transition, for example using a gate voltage.

  17. Chiral phase transition in lattice QCD as a metal-insulator transition

    SciTech Connect

    Garcia-Garcia, Antonio M.; Osborn, James C.

    2007-02-01

    We investigate the lattice QCD Dirac operator with staggered fermions at temperatures around the chiral phase transition. We present evidence of a metal-insulator transition in the low lying modes of the Dirac operator around the same temperature as the chiral phase transition. This strongly suggests the phenomenon of Anderson localization drives the QCD vacuum to the chirally symmetric phase in a way similar to a metal-insulator transition in a disordered conductor. We also discuss how Anderson localization affects the usual phenomenological treatment of phase transitions a la Ginzburg-Landau.

  18. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    PubMed Central

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-01-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system. PMID:26860789

  19. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-02-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.

  20. Quantum capacitance in thin film vanadium dioxide metal insulator transition

    NASA Astrophysics Data System (ADS)

    Wu, Zhe; Knighton, Talbot; Tarquini, Vinicio; Torres, David; Wang, Tongyu; Sepulveda, Nelson; Huang, Jian

    We present capacitance measurements of the electronic density of states performed in high quality vanadium dioxide (VO2) thin films on sapphire (Al2O3) substrate. These films show the expected metal insulator transition near 60 °C with resistivity changing by 3 orders of magnitude with a hysteresis of 10 °C. To make a capacitive probe, a gate is suspended above the film surface using a flip-chip method with microfabricated supports. The geometric capacitance per-area reached is 40 pF/mm2. Such a large capacitance can be significantly modified by electron interaction and band charging/discharging which appear as an extra term known as the quantum capacitance (Cq). An AC signal applied to the gate allows measurement of the changing density of states (DOS) across the MIT. The DOS abruptly increases as the sample is heated through the transition point. Conversely the low temperature drop of d μ / d n is consistent with an energy gap opening in the insulating phase. These parameters shed light on the transition mechanism. NSF DMR-1105183, NSF ECCS 1306311.

  1. Anderson metal-insulator transitions with classical magnetic impurities

    SciTech Connect

    Jung, Daniel; Kettemann, Stefan

    2014-08-20

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude W{sub c}, in the presence of Heisenberg impurities, W{sub c} is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  2. Anderson metal-insulator transitions with classical magnetic impurities

    NASA Astrophysics Data System (ADS)

    Jung, Daniel; Kettemann, Stefan

    2014-08-01

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude Wc, in the presence of Heisenberg impurities, Wc is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  3. Metal-insulator transition in trans-polyacetylene

    NASA Astrophysics Data System (ADS)

    Conwell, E. M.; Mizes, H. A.; Jeyadev, S.

    1989-07-01

    We have calculated the band structure for a chain of doped trans-polyacetylene using the electronic part of the Su-Schrieffer-Heeger Hamiltonian plus the Coulomb potential arising from ions and charged solitons surrounding the chain. The lattice structure used was that determined by x rays for Na-doped polyacetylene. To agree with a number of experimental observations the donated electrons were taken to be in soliton states at all dopant concentrations. In obtaining the potential of a point charge on a chain in the metallic state, the confinement of the free electrons to a chain was taken into account. Because screening depends on the calculated energy levels, specifically on the density of states at the Fermi energy, η(EF), in the metallic state, which, in turn, depend on the potential used to obtain them, self-consistency was required in the calculations. The energy-level structure was found to depend strongly on the ion spacing, conveniently measured in terms of the average spacing a of C-H's along the chain. For ion spacing 5a, characteristic of the Na-ion-rich regions up to an average dopant concentration of ~6%, the chain remained semiconducting. For ion spacing 4a, which appears to characterize the next phase for Na doping, metallic behavior was found for a doped chain length of ~100 sites or more. Self-consistency was fulfilled with η(EF) equal to the value obtained from the saturation spin susceptibility in the metallic state. In addition to sufficiently long chains that the level spacing is comparable to kT, the metal-insulator transition is found to require considerable overlap of electron wave functions on adjacent solitons and a fairly deep potential well. The transition is best described as a Mott transition. Our model predicts that a sample in the metallic state at room temperature becomes semiconducting at lower temperature. Evidence for this is found in the temperature variation of the spin susceptibility and of ESR linewidth. It is argued that

  4. Metal-insulator and charge ordering transitions in oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, Sujay Kumar

    Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase

  5. Metal-insulator transition at lanthanum aluminate-strontium titanate interface induced by oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Dai, Weitao; Cen, Cheng

    The formation of two-dimensional electron gas (2DEG) at lanthanum aluminate (LAO)-strontium titanate (STO) interface, as well as the 2DEG's unique characters in metal-insulator transition, have evoked widespread interest. Highly insulating interfaces are obtained for the structures with LAO thickness below 3 unit cell (uc) and abrupt transition from an insulating to conducting interface was observed for samples with thicker LAO layers. For 3uc LAO/STO samples, reversible nanoscale control of the metal-insulator transition was implemented by a conductive AFM writing. Our research furtherly discovered a very stable metal-insulator transition can be achieved by oxygen plasma (OP) treatment for samples with thicker LAO layers. AFM imaging and XPS measurement demonstrated the low energy OP treatment altered only the surface bonds, which confirmed the importance of surface properties in the heterostructures. Then microscale Hall bars were patterned at the interface and imaged by electrostatic force microscope. Their transport and magnetic properties were measured. This research will promote deeper understanding about the interfacial metal-insulator transition mechanism and open new device opportunities. This work is supported by the Department of Energy Grant No. DE-SC-0010399 and National Science Foundation Grant No. NSF-1454950.

  6. Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.

    2014-06-01

    Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (nc) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) nc. We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, kFl=1, where kF(n) is the 2D Fermi wave vector and l (n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density nc as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density nc appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a

  7. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  8. Pure electronic metal-insulator transition at the interface of complex oxides.

    PubMed

    Meyers, D; Liu, Jian; Freeland, J W; Middey, S; Kareev, M; Kwon, Jihwan; Zuo, J M; Chuang, Yi-De; Kim, J W; Ryan, P J; Chakhalian, J

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  9. Pure electronic metal-insulator transition at the interface of complex oxides

    NASA Astrophysics Data System (ADS)

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  10. Electrocaloric effect of metal-insulator transition in VO{sub 2}

    SciTech Connect

    Matsunami, Daichi; Fujita, Asaya

    2015-01-26

    The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

  11. Oxygen vacancy induced metal-insulator transition in LaNiO3

    NASA Astrophysics Data System (ADS)

    Misra, Debolina; Kundu, Tarun Kumar

    2016-01-01

    First principle calculations were carried out to examine the metal-insulator transition in LaNiO3 due to changes in oxygen content and consequent alteration of valence state of nickel. The optical properties of all the oxygen deficient LaNiO3-x compounds were calculated to illustrate the electronic structures of the compounds and the change they undergo during the metal-insulator transition. The metallic nature of LaNiO3 is characterized by the Drude peak in the optical conductivity spectra and the high reflectivity it exhibits in the low frequency region. The complex dielectric function and the optical conductivity spectra clearly show that, for x = 0.25, i.e., LaNiO2.75 becomes a semiconductor. As x increases further to 0.5, a gap in the optical spectra appears, indicating the insulating nature of LaNiO2.5. The insulating state of LaNiO2.5 is best described by the GW+HSE method which gives a good estimation of the optical gap of the material. The absorption spectra of LaNiO2.5 clearly reveal that this material is transparent in the low frequency region. This metal-insulator transition is followed by another insulator to semiconductor transition, as x is increased further to 1 i.e., in case of LaNiO2. The metal-insulator transition is then explained on the basis of electron localization function calculations, which show the increase in the covalent bonding in the system as the transition to the insulating state sets in.

  12. Buckley Prize Talk: The Suprerconductor-(Metal)-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kapitulnik, Aharon

    2015-03-01

    While the classical theory of phase transitions has been extraordinarily successful, there are several reasons to exercise caution when applying this approach to the zero temperature superconducting transition. First, experimental identification of the relevant phases requires extrapolation to zero temperature, which becomes complicated, especially when one needs to identify sources of dissipation. In addition, since superconductivity may be highly inhomogeneous as appreciable superconducting order parameter may be concentrated in ``superconducting puddles'' due to disorder and/or spontaneous phase separation, the nature of the quantum phase transition to a superconducting state may be highly anomalous, where the system attempts to optimizes the formation of puddles with the Josephson coupling among them to obtain global superconductivity. In this talk we will review some of the consequences of these considerations, emphasizing the possible emergence of anomalous metallic phases close to the superconductor-insulator transition.

  13. Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

    SciTech Connect

    Paul, Sanhita Ghosh, Anirudha Raj, Satyabrata

    2014-04-24

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

  14. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  15. Disorder and Metal-Insulator Transitions in Weyl Semimetals.

    PubMed

    Chen, Chui-Zhen; Song, Juntao; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X C

    2015-12-11

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice. PMID:26705648

  16. Metal insulator transitions in perovskite SrIrO{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Jeong, Yoon Hee; Kim, Ki-Seok

    2014-12-07

    Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO{sub 3} thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO{sub 3} (110), DyScO{sub 3} (110), SrTiO{sub 3} (001), and NdGaO{sub 3} (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO{sub 3}, unusual non-Fermi liquid characteristics emerge in resistivity as Δρ ∝ T{sup ε} with ε evolving from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.

  17. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature. PMID:25215974

  18. Control of plasmonic nanoantennas by reversible metal-insulator transition.

    PubMed

    Abate, Yohannes; Marvel, Robert E; Ziegler, Jed I; Gamage, Sampath; Javani, Mohammad H; Stockman, Mark I; Haglund, Richard F

    2015-01-01

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics. PMID:26358623

  19. Control of plasmonic nanoantennas by reversible metal-insulator transition

    PubMed Central

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-01-01

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics. PMID:26358623

  20. Pressure-induced metal-insulator transition in spinel compound CuV 2S 4

    NASA Astrophysics Data System (ADS)

    Okada, H.; Koyama, K.; Hedo, M.; Uwatoko, Y.; Watanabe, K.

    2008-04-01

    In order to investigate the pressure effect on electrical properties of CuV 2S 4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV 2S 4 at 8 GPa.

  1. Quantum-critical conductivity scaling for a metal-insulator transition

    PubMed

    Lee; Carini; Baxter; Henderson; Gruner

    2000-01-28

    Temperature (T)- and frequency (omega)-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-one correspondence between the frequency- and temperature-dependent conductivity on both sides of the critical concentration, thus establishing the quantum-critical nature of the transition. The analysis of the conductivity leads to a universal scaling function and establishes the critical exponents. This scaling can be described by an x-, T-, and omega-dependent characteristic length, the form of which is derived by experiment. PMID:10649993

  2. Tuning directional dependent metal-insulator transitions in quasi-1D quantum wires with spin-orbit density wave instability.

    PubMed

    Das, Tanmoy

    2016-07-27

    We study directional dependent band gap evolutions and metal-insulator transitions (MITs) in model quantum wire systems within the spin-orbit density wave (SODW) model. The evolution of MIT is studied as a function of varying anisotropy between the intra-wire hopping ([Formula: see text]) and inter-wire hopping ([Formula: see text]) with Rashba spin-orbit coupling. We find that as long as the anisotropy ratio ([Formula: see text]) remains below 0.5, and the Fermi surface nesting is tuned to [Formula: see text], an exotic SODW induced MIT easily develops, with its critical interaction strength increasing with increasing anisotropy. As [Formula: see text] (2D system), the nesting vector switches to [Formula: see text], making this state again suitable for an isotropic MIT. Finally, we discuss various physical consequences and possible applications of the directional dependent MIT. PMID:27248294

  3. Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

    NASA Astrophysics Data System (ADS)

    Bhobe, P. A.; Kumar, A.; Taguchi, M.; Eguchi, R.; Matsunami, M.; Takata, Y.; Nandy, A. K.; Mahadevan, P.; Sarma, D. D.; Neroni, A.; Şaşıoǧlu, E.; Ležaić, M.; Oura, M.; Senba, Y.; Ohashi, H.; Ishizaka, K.; Okawa, M.; Shin, S.; Tamasaku, K.; Kohmura, Y.; Yabashi, M.; Ishikawa, T.; Hasegawa, K.; Isobe, M.; Ueda, Y.; Chainani, A.

    2015-10-01

    Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K2Cr8O16 , which exhibits a temperature-dependent (T -dependent) paramagnetic-to-ferromagnetic-metal transition at TC=180 K and transforms into a ferromagnetic insulator below TMI=95 K . We observe clear T -dependent dynamic valence (charge) fluctuations from above TC to TMI , which effectively get pinned to an average nominal valence of Cr+3.75 (Cr4 +∶Cr3 + states in a 3 ∶1 ratio) in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T -dependent BCS-type energy gap, with 2 G (0 )˜3.5 (kBTMI)˜35 meV . First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U ˜4 eV , establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d -electrons/Cr ) and the half-metallic ferromagnetism in the t2 g up-spin band favor a low-energy Peierls metal-insulator transition.

  4. Origin of the metal-insulator transition of indium atom wires on Si(111)

    NASA Astrophysics Data System (ADS)

    Kim, Sun-Woo; Cho, Jun-Hyung

    2016-06-01

    As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to Fermi surface nesting. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4 ×1 phase to the low-temperature 8 ×2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the ×2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls-instability-driven CDW formation.

  5. Cryogenic microwave imaging of metal-insulator transition in doped silicon

    NASA Astrophysics Data System (ADS)

    Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun

    2011-03-01

    We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases.

  6. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  7. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

    SciTech Connect

    Bubel, Simon; Glaudell, Anne M.; Mates, Thomas E.; Chabinyc, Michael L.; Hauser, Adam J.; Stemmer, Susanne

    2015-03-23

    For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO{sub 3} in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

  8. Metal-Insulator Transition in the Hubbard Model: Correlations and Spiral Magnetic Structures

    NASA Astrophysics Data System (ADS)

    Timirgazin, Marat A.; Igoshev, Petr A.; Arzhnikov, Anatoly K.; Irkhin, Valentin Yu.

    2016-03-01

    The metal-insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the t-t^' Hubbard model at half-filling by using both the generalized for the case of spiral order Hartree-Fock approximation (HFA) and Kotliar-Ruckenstein slave-boson approach. It turns out that the magnetic scenario of MIT becomes superior over the non-magnetic one. The electron correlations lead to some suppression of the spiral phases in comparison with HFA. We found the presence of a metallic antiferromagnetic (spiral) phase in the case of three-dimensional lattices.

  9. Critical Slowing Down of the Charge Carrier Dynamics at the Mott Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Zielke, David; Polzin, Jana; Sasaki, Takahiko; Müller, Jens

    2015-05-01

    We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical end point, we observe a divergent increase of the resistance fluctuations accompanied by a drastic shift of spectral weight to low frequencies, demonstrating the critical slowing down of the order parameter (doublon density) fluctuations. The slow dynamics is accompanied by non-Gaussian fluctuations, indicative of correlated charge carrier dynamics. A possible explanation is a glassy freezing of the electronic system as a precursor of the Mott MIT.

  10. Metal-insulator transition in the Pr substituted Bi-2212 bulk textured crystals

    NASA Astrophysics Data System (ADS)

    Prabhakaran, D.; Subramanian, C.

    1997-02-01

    Bulk textured crystals of Bi 2.2Sr 1.9Ca 1- xPr xCu 2O 8 (0.0 ≤ x ≤ 0.6) were grown by the platinum strip heater floating zone technique. The effect of Pr on the growth and superconducting properties was studied. From the X-ray diffraction studies, variation of lattice constants, phase purity and texturing quantification with respect to Pr substitution were calculated. Variation in the Sr/Ca ratio upon Pr doping was observed. Metal insulator transition was observed in the higher order Pr substituted crystals.

  11. Dimensional-Crossover-Driven Metal-Insulator Transition in SrVO3 Ultrathin Films

    SciTech Connect

    Yoshimatsu, K; Okabe, K; Kumigashira, H; Okamoto, Satoshi; Aizaki, S; Fujimori, A; Oshima, M

    2010-01-01

    We have investigated the changes occurring in the electronic structure of digitally controlled SrVO3 ultrathin films across the dimensionality-controlled metal-insulator transition (MIT) by in situ photoemission spectroscopy. With decreasing film thickness, a pseudogap is formed at EF through spectral weight transfer from the coherent part to the incoherent part. The pseudogap finally evolves into an energy gap that is indicative of the MIT in a SrVO3 ultrathin film. The observed spectral behavior is reproduced by layer dynamical-mean-field-theory calculations, and it indicates that the observed MIT is caused by the reduction in the bandwidth due to the dimensional crossover.

  12. Controlling the metal insulator transition using the ferroelectric field effect in rare earth nickelates

    NASA Astrophysics Data System (ADS)

    Marshall, Matthew; Disa, Ankit; Kumah, Divine; Chen, Hanghui; Ismail-Beigi, Sohrab; Walker, Fred; Ahn, Charles

    2013-03-01

    A ferroelectric field effect transistor (FE-FET) modulates conductivity in a non-volatile manner by electrostatically accumulating and depleting charge carriers at the interface between a conducting channel and ferroelectric gate. The rare earth nickelate LaNiO3 is metallic in bulk, while other rare earth nickelates, such as NdNiO3, exhibit metal-insulator transitions and anti-ferromagnetic behavior in the bulk. Here, we show that by coupling the ferroelectric polarization of Pb0.8Zr0.2TiO3 (PZT) to the carriers in a nickelate, we can dynamically induce a metal- insulator transition in ultra-thin films of LaNiO3, and induce large changes in the MIT transition temperature in NdNiO3. Density functional theory is used to determine changes in the physical and electronic Ni-O-Ni bond angle of the nickelate at the interface between PZT and LaNiO3. The effect of the ferroelectric polarization is to decrease the Ni-O-Ni bond angle from 180 degrees and increase the carrier effective mass. Related to this change in electronic structure, we observe a change in resistivity of approximately 80% at room temperature for an ultra-thin 3 unit cell thick film of LaNiO3. Work supported by FENA and the NSF under MRSEC DMR 1119826.

  13. Cooperative phonon effects in the metal-insulator transitions of manganite and nickelate perovskites

    NASA Astrophysics Data System (ADS)

    Brierley, Richard T.; Guzmán Verri, Gian G.; Littlewood, Peter B.

    Metal-insulator transitions in manganite and nickelate perovskites depend on the competition between the electron kinetic energy, which favors the metallic phase, and the electron-phonon coupling and Coulomb interaction, which favor localization. The size of the A-site cation controls the relative rotation of the octahedral structural units of the perovskite in the range of 0 - 15°. This is accompanied by changes in the metal-insulator transition temperature from 0 - 600K . This effect is commonly attributed to modification in the electron bandwidth from changes in orbital overlap. Although previous theoretical studies of these materials include the electron-phonon interaction, they typically do not consider cooperative phonon effects. Using a phenomenological model of the perovskite structure, we show that the long-range anisotropic forces arising from inter-site phonon interactions are modulated by changes in the octahedral rotation. We demonstrate using statistical mechanical calculations that these changes in the strain interaction can capture the variation in transition temperature with tolerance factor observed in both the manganites and nickelates.

  14. Moderate pressure synthesis of rare earth nickelate with metal-insulator transition using polymeric precursors

    NASA Astrophysics Data System (ADS)

    Napierala, C.; Lepoittevin, C.; Edely, M.; Sauques, L.; Giovanelli, F.; Laffez, P.; VanTedeloo, G.

    2010-07-01

    Rare earth nickelates exhibit a reversible metal-semiconductor phase transition that is, in the infrared range, responsible for a thermo-optical contrast. The state of the art synthesis of these compounds usually requires high oxygen pressure to stabilize Ni in the oxidation state 3 +. In this work, using polymeric precursor associated with moderate pressure annealing, we show that it is possible to obtain fully oxidized rare earth nickelate with metal-insulator transition. Using thermogravimetric analysis, X-ray diffraction and transmission electronic microscopy we compare different samples synthesized at different oxygen pressures and demonstrate their structural similarity. Thermo-optical properties were measured, in the infrared range, using reflectance measurements and confirmed the metal-insulator transition at 60 °C in both samples.TEM observations lead to the conclusion that the structure commonly obtained at 175 bar is perfectly observed in the 20 bar sample without major structural defects. The two samples exhibit a thermochromic behavior and thermo-optical properties of the two samples are equivalent.

  15. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  16. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    SciTech Connect

    Huber-Rodriguez, Benjamin; Ji, Heng; Chen, Chih-Wei; Kwang, Siu Yi; Hardy, Will J.; Morosan, Emilia; Natelson, Douglas

    2014-09-29

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO{sub 2} material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO{sub 2} powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  17. Mesoscopic Metal-Insulator Transition at Ferroelastic Domain Walls in VO2

    SciTech Connect

    Jones, Keith M; Kalinin, Sergei V; Kolmakov, Andrei; Luk'yanchuk, Prof. Igor A.; Meunier, Vincent; Proksch, Roger; Shelton Jr, William Allison; Strelcov, Evgheni; Tselev, Alexander

    2010-01-01

    The novel phenomena induced by symmetry breaking at homointerfaces between ferroic variants in ferroelectric and ferroelastic materials have attracted recently much attention. Using variable temperature scanning microwave microscopy, we demonstrate the mesoscopic strain-induced metal-insulator phase transitions in the vicinity of ferroelastic domain walls in the semiconductive VO2 that nucleated at temperatures as much as 10-12 C below bulk transition, resulting in the formation of conductive channels in the material. Density functional theory is used to rationalize the process low activation energy. This behavior, linked to the strain inhomogeneity inherent in ferroelastic materials, can strongly affect interpretation of phase-transition studies in VO2 and similar materials with symmetry-lowering transitions, and can also be used to enable new generations of electronic devices though strain engineering of conductive and semiconductive regions.

  18. Redox chemistry and metal-insulator transitions intertwined in a nano-porous material

    NASA Astrophysics Data System (ADS)

    Maximoff, Sergey N.; Smit, Berend

    2014-06-01

    Metal-organic frameworks are nano-porous adsorbents of relevance to gas separation and catalysis, and separation of oxygen from air is essential to diverse industrial applications. The ferrous salt of 2,5-dihydroxy-terephthalic acid, a metal-organic framework of the MOF74 family, can selectively adsorb oxygen in a manner that defies the classical picture: adsorption sites either do or do not share electrons over a long range. Here we propose, and then justify phenomenologically and computationally, a mechanism. Charge-transfer-mediated adsorption of electron acceptor oxygen molecules in the metal-organic framework, which is a quasi-one-dimensional electron-donor semiconductor, drives and is driven by quasi-one-dimensional metal-insulator-metal transitions that localize or delocalize the quasi-one-dimensional electrons. This mechanism agrees with the empirical evidence, and predicts a class of nano-porous semiconductors or metals and potential adsorbents and catalysts in which chemistry and metal-insulator-metal transitions intertwine.

  19. Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

    NASA Astrophysics Data System (ADS)

    Omori, Yukiko; Rüegg, Andreas; Sigrist, Manfred

    2014-10-01

    Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott and a band insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both on-site and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.

  20. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    SciTech Connect

    Lysenko, Sergiy Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph; Aparicio, Joaquin; Sepúlveda, Nelson

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  1. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  2. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  3. Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Krowne, C. M.; Charipar, K. M.; Bussmann, K.; Chervin, C. N.; Pala, I. R.; Rolison, D. R.

    2016-02-01

    The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO3/SrTiO3) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). In this report, we demonstrate the existence of a metal-insulator transition (MIT) in highly disordered RuO2 nanoskins with carrier concentrations that are one-to-six orders of magnitude higher and with mobilities that are one-to-six orders of magnitude lower than those reported previously for 2D oxides. The presence of an MIT and the accompanying atypical electronic characteristics place this form of the oxide in a highly diffusive, strong disorder regime and establishes the existence of a metallic state in 2D that is analogous to the three-dimensional case.

  4. The Effect of Enhanced Spin-Orbit Scattering on the Superconducting - Nonsuperconducting Transition and the Metal-Insulator Transition in Granular Aluminum.

    NASA Astrophysics Data System (ADS)

    Miller, Theodore A.

    A small amount of bismuth was added to a set of granular aluminum samples to increase the spin-orbit scattering rate. This set is compared with a second set with no bismuth added. With the addition of bismuth, both the metal-insulator transition and the threshold for the presence of superconductivity were shifted a similar amount to higher values of resistivity. The shift of the metal-insulator transition can be explained as a result of the effect of increased spin -orbit scattering at an Anderson transiton. The fact that the superconducting threshold also shifts indicates that it is the proximity to the metal-insulator transition that depresses superconductivity.

  5. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    PubMed

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  6. Hybridization wave as the cause of the metal-insulator transition in rare earth nickelates

    NASA Astrophysics Data System (ADS)

    Park, Hyowon; Marianetti, Chris A.; Millis, Andrew J.

    2012-02-01

    The metal-insulator transition driven by varying rare earth (Re) ion in ReNiO3 has been a longstanding challenge to materials theory. Experimental evidence suggesting charge order is seemingly incompatible with the strong Mott-Hubbard correlations characteristic of transition metals. We present density functional, Hartree-Fock and Dynamical Mean field calculations showing that the origin of the insulating phase is a hybridization wave, in which a two sublattice ordering of the oxygen breathing mode produces two Ni sites with almost identical Ni d-charge densities but very different magnetic moments and other properties. The high temperature crystal structure associated with smaller Re ions such as Lu is shown to be more susceptible to the distortion than the high temperature structure associated with larger Re ions such as La.

  7. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    PubMed Central

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  8. Low-energy description of the metal-insulator transition in the rare-earth nickelates

    NASA Astrophysics Data System (ADS)

    Subedi, Alaska; Peil, Oleg E.; Georges, Antoine

    2015-02-01

    We propose a simple theoretical description of the metal-insulator transition of rare-earth nickelates. The theory involves only two orbitals per nickel site, corresponding to the low-energy antibonding eg states. In the monoclinic insulating state, bond-length disproportionation splits the manifold of eg bands, corresponding to a modulation of the effective on-site energy. We show that, when subject to a local Coulomb repulsion U and Hund's coupling J , the resulting bond-disproportionated state is a paramagnetic insulator for a wide range of interaction parameters. Furthermore, we find that when U -3 J is small or negative, a spontaneous instability to bond disproportionation takes place for large enough J . This minimal theory emphasizes that a small or negative charge-transfer energy, a large Hund's coupling, and a strong coupling to bond disproportionation are the key factors underlying the transition. Experimental consequences of this theoretical picture are discussed.

  9. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    NASA Astrophysics Data System (ADS)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  10. Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO{sub 3}

    SciTech Connect

    Scagnoli, V.; Staub, U.; Mulders, A. M.; Janousch, M.; Meijer, G. I.; Hammerl, G.; Tonnerre, J. M.; Stojic, N.

    2006-03-01

    Soft x-ray resonant scattering at the Ni L{sub 2,3} edges is used to test models of magnetic- and orbital-ordering below the metal-insulator transition in NdNiO{sub 3}. The large branching ratio of the L{sub 3} to L{sub 2} intensities of the (1/2 0 1/2) reflection and the observed azimuthal angle and polarization dependence originates from a noncollinear magnetic structure. The absence of an orbital signal and the noncollinear magnetic structure show that the nickelates are materials for which orbital ordering is absent at the metal-insulator transition.

  11. Metal-insulator transitions of bulk and domain-wall states in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, Kentaro

    A family of pyrochlore iridates R2Ir2O7 offers an ideal platform to explore intriguing phases such as topological Mott insulator and Weyl semimetal. Here we report transport and spectroscopic studies on the metal-insulator transition (MIT) induced by the modulations of effective electron correlation and magnetic structures, which is finely tuned by external pressure, chemical substitutions (R = Nd1-x Prx and SmyNd1-y) , and magnetic field. A reentrant insulator-metal-insulator transition is observed near the paramagnetic insulator-metal phase boundary reminiscent of a first-order Mott transition for R = SmyNd1-y compounds (y~0.8). The metallic states on the magnetic domain walls (DWs), which are observed for R = Nd in real space as well as in transport properties, is simultaneously turned into the insulating one. These findings imply that the DW electronic state is intimately linked to the bulk states. For the mixed R = Nd1-x Prx compounds, the divergent behavior of resistivity with antiferromagnetic order is significantly suppressed by applying a magnetic field along [001] direction. It is attributed to the phase transition from the antiferromagnetic insulating state to the novel Weyl (semi-)metal state accompanied by the change of magnetic structure. The present study combined with experiment and theory suggests that there are abundant exotic phases with physical parameters such as electron correlation and Ir-5 d magnetic order pattern. Work performed in collaboration with J. Fujioka, B.-J. Yang, C. Terakura, N. Nagaosa, Y. Tokura (University of Tokyo, RIKEN CEMS), J. Shiogai, A. Tsukazaki, S. Nakamura, S. Awaji (Tohoku University). 1This work was supported by JSPS FIRST Program and Grant-in-Aid for Scientific Research (Grants No. 80609488 and No. 24224009).

  12. Metal-insulator transition in nanocomposite VOx films formed by anodic electrodeposition

    NASA Astrophysics Data System (ADS)

    Tsui, Lok-kun; Hildebrand, Helga; Lu, Jiwei; Schmuki, Patrik; Zangari, Giovanni

    2013-11-01

    The ability to grow VO2 films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VOx films by anodic electrodeposition of V2O5, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO2 stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ˜ -2.4%/ °C from 20 to 140 °C.

  13. Field-Induced Metal-Insulator Transition in a Two-Dimensional Organic Superconductor

    SciTech Connect

    Wosnitza, J.; Wanka, S.; Hagel, J.; Lo''hneysen, H. v.; Qualls, J. S.; Brooks, J. S.; Balthes, E.; Schlueter, J. A.; Geiser, U.; Mohtasham, J.

    2001-01-15

    The quasi-two-dimensional organic superconductor {beta}''-( BEDT-TTF){sub 2}SF{sub 5} CH{sub 2}CF {sub 2}SO{sub 3} (T{sub c}{approx}4.4 K) shows very strong Shubnikov--de Haas (SdH) oscillations which are superimposed on a highly anomalous steady background magnetoresistance, R{sub b} . Comparison with de Haas--van Alphen oscillations allows a reliable estimate of R{sub b} which is crucial for the correct extraction of the SdH signal. At low temperatures and high magnetic fields insulating behavior evolves. The magnetoresistance data violate Kohler's rule, i.e., cannot be described within the framework of semiclassical transport theory, but converge onto a universal curve appropriate for dynamical scaling at a metal-insulator transition.

  14. Local Peltier-effect-induced reversible metal-insulator transition in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-06-01

    We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal-insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  15. The metal-insulator phase transition in the strained GdBiTe3

    NASA Astrophysics Data System (ADS)

    Van Quang, Tran; Kim, Miyoung

    2013-05-01

    In this work, we investigated the electronic structures and magnetic properties of the GdBiTe3 alloy employing a first-principles all-electron density-functional approach, aiming to understand the magnetic phase stability and electronic structure dependences on the exchange correlation potential and the strain. The results show that the ferromagnetic phase is energetically more stable over the paramagnetic phase and the metal-insulator phase transition occurs upon the lattice distortion via the strain along the perpendicular c direction, which is not influenced by the strength of correlation energy introduced to describe the localized f orbitals. Thermoelectric transport properties are also investigated to reveal that the compressive strain markedly enhances the Seebeck coefficient, which is reduced in comparison with the Bismuth telluride due to the Gd doping.

  16. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    SciTech Connect

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni; Hildebrand, Helga; Schmuki, Patrik

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  17. Metal-insulator transition in SrTi1-xVxO3 thin films

    NASA Astrophysics Data System (ADS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-01

    Epitaxial SrTi1-xVxO3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  18. Selective electrochemical reactivity of rutile VO2 towards the suppression of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Singh, Sujay; Abtew, Tesfaye A.; Horrocks, Gregory; Kilcoyne, Colin; Marley, Peter M.; Stabile, Adam A.; Banerjee, Sarbajit; Zhang, Peihong; Sambandamurthy, G.

    2016-03-01

    We demonstrate through electrolyte gating measurements of a single nanobeam that the rultile phase of VO2 is electrochemically more reactive than the monoclinic phase. Our results show that the complete suppression of the metal-insulator transition and stabilization of the metallic phase is possible when gate voltage is applied in the rutile metallic phase. The results are discussed based on the formation of oxygen vacancies wherein accommodation of a high concentration of vacancies in the rutile phase selectively stabilizes it by disrupting dimerization of adjacent V-V pairs required for a transition to the monoclinic phase. The creation of oxygen vacancies is proposed to proceed through the oxidation of the electrolyte. Raman spectroscopy data suggest surface metallization upon electrolyte gating with an initial coexistence of insulating monoclinic and metallic domains. The selective electrochemical reactivity of the rutile phase and the resulting defect-induced stabilization of this phase across a vastly expanded temperature window suggest a facile defect engineering route to tune electronic phase transitions.

  19. Systematics in the metal-insulator transition temperatures in vanadium oxides

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Reisner, G. M.

    2016-01-01

    Nine of the known vanadium oxides, VO 2 - 1 / n (n - a positive or negative integer) with n = 2 - 6 , 8 , 9 , ∞ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures TMIT (V7O13 is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in TMIT as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if TMIT is the absolute value of the difference between TM(n) and TP(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of TM-TP versus 1/n lie on, or close to, two simple straight lines; one is TM -TP =T∞(7 / n - 1) for V3O5, V4O7, V5O9, V7O13, V8O15, V9O17 and VO2 and the other is TM -TP =T∞(3 / n - 1) for V2O3, V6O11 and VO2.

  20. Metal-insulator transition in low dimensional La{sub 0.75}Sr{sub 0.25}VO{sub 3} thin films

    SciTech Connect

    Dao, Tran M.; Mondal, Partha S.; Takamura, Y.; Arenholz, E.; Lee, Jaichan

    2011-06-15

    We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La{sub 0.75}Sr{sub 0.25}VO{sub 3} films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electronelectron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

  1. ARPES studies on metal-insulator-transition in NiS2-xSex

    NASA Astrophysics Data System (ADS)

    Han, Garam; Kim, Y. K.; Kyung, W. S.; Kim, Chul; Koh, Y. Y.; Lee, K. D.; Kim, C.

    2012-02-01

    Understanding Metal insulator transition (MIT) is one of the most challenging issues in condensed matter physics. NiS2-xSex (NSS) is a well known system for band width controlled MIT studies while most of High-Tc superconductors (HTSCs) are described within band filling MIT picture. Cubic pyrite NiS2 is known as a charge-transfer (CT) insulator and easily forms a solid solution with NiSe2, which is a good metal even though it is isostrucural and isoelectronic to NiS2. MIT is induced by Se alloying and is observed at a low temperature for x=0.5. The important merit is that there is no structure transition which often accompanies MIT. In spite of the importance of the system, even the experimental band dispersion is not known so far along with many controversies. For this reason, we performed angle resolved photoemission spectroscopy on high quality single crystals and successfully obtained Fermi surface maps of x=0.5, x=0.7 and x=0.8 systems (the metallic side). By doping dependent systematic studies on NSS and comparison with LDA calculation, we try to explain the relationship between band width and the MIT.

  2. Metal-Insulator Transition in nanoparticle solids: a kinetic Monte Carlo study

    NASA Astrophysics Data System (ADS)

    Zimanyi, Gergely; Qu, Luman; Voros, Marton

    Nanoparticle (NP) solids recently emerged as a promising platform for high performance electronic/optoelectronic devices, including third generation solar cells, light emitting diodes and field effect transistors. A challenge of NP films is that their charge transport is in the unfavorable hopping/insulating regime. Recent experiments showed that it is possible to tune the NP solids through a Metal-Insulator Transition (MIT) via ligand engineering and ALD matrix infilling. However, the microscopic understanding of this transition is not yet clear. To address this challenge, we developed a Kinetic Monte Carlo transport modeling framework that builds on determining NP parameters from ab initio-based calculations of the energy level structures, charging energies and overlaps, and then uses these to compute the hopping mobility across a disordered NP array by the Marcus and Miller-Abrahams mechanisms. We reproduced and explained the observed non-monotonous dependence of the mobility on the NP diameter. Centrally, we extended our platform to be able to capture the MIT. We determined the MIT phase boundary on the (NP-NP overlap - Electron density) plane. We demonstrated that all mobilities fall on a universal scaling curve, allowing us to determine the critical behavior across the MIT. Supported by: UC Davis Office of Research RISE ANSWER Grant.

  3. Infrared evidence of a Slater metal-insulator transition in NaOsO₃.

    PubMed

    Vecchio, I Lo; Perucchi, A; Di Pietro, P; Limaj, O; Schade, U; Sun, Y; Arai, M; Yamaura, K; Lupi, S

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO₃ 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO₃ is the first known 3D Slater insulator. PMID:24141899

  4. Infrared evidence of a Slater metal-insulator transition in NaOsO3

    PubMed Central

    Vecchio, I. Lo; Perucchi, A.; Di Pietro, P.; Limaj, O.; Schade, U.; Sun, Y.; Arai, M.; Yamaura, K.; Lupi, S.

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO3 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO3 is the first known 3D Slater insulator. PMID:24141899

  5. Percolative metal-insulator transition in LaMnO3

    NASA Astrophysics Data System (ADS)

    Sherafati, M.; Baldini, M.; Malavasi, L.; Satpathy, S.

    2016-01-01

    We show that the pressure-induced metal-insulator transition (MIT) in LaMnO3 is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, one, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold vc≈0.29 . Measured high-pressure resistivity follows the percolation scaling laws quite well, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

  6. Unraveling metal-insulator transition mechanism of VO₂ triggered by tungsten doping.

    PubMed

    Tan, Xiaogang; Yao, Tao; Long, Ran; Sun, Zhihu; Feng, Yajuan; Cheng, Hao; Yuan, Xun; Zhang, Wenqing; Liu, Qinghua; Wu, Changzheng; Xie, Yi; Wei, Shiqiang

    2012-01-01

    Understanding the mechanism of W-doping induced reduction of critical temperature (T(C)) for VO(2) metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calculations, we unveil the atomic structure evolutions of W dopant and its role in tailoring the T(C) of VO(2) MIT. We find that the local structure around W atom is intrinsically symmetric with a tetragonal-like structure, exhibiting a concentration-dependent evolution involving the initial distortion, further repulsion, and final stabilization due to the strong interaction between doped W atoms and VO(2) lattices across the MIT. These results directly give the experimental evidence that the symmetric W core drives the detwisting of the nearby asymmetric monoclinic VO(2) lattice to form rutile-like VO(2) nuclei, and the propagations of these W-encampassed nuclei through the matrix lower the thermal energy barrier for phase transition. PMID:22737402

  7. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Bohnenbuck, B.; Chuang, Y.-D.; Geck, J.; Tokura, Y.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Sawatzky, G. A.; Damascelli, A.

    2010-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate an incipient instability of the parent compound, are detected below the transition. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x˜0.05 Mn substitution. In collaboration with A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley Lab), I. Zegkinoglou, M.W. Haverkort (MPI, Stuttgart), I.S. Elfimov, D.G. Hawthorn (UBC), R. Mathieu, S. Satow, H. Takagi (Tokyo), H.-H. Wu and C. Sch"ußler-Langeheine (Cologne).

  8. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl.

    PubMed

    Naka, Takashi; Nikitin, Artem M; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-20

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) (γ) . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state. PMID:27218143

  9. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Hippalgaonkar, Kedar; Lee, Sangwook; Ko, Changhyun; Yang, Fan; Suh, Joonki; Liu, Kai; Wang, Kevin; Zhang, Xiang; Dames, Chris; Wu, Junqiao

    In an electrically conductive solid, the Wiedemann-Franz (WF) law requires the electronic contribution to thermal conductivity to be proportional to the product of electrical conductivity and absolute temperature , where the ratio is the Lorenz number, typically not much different from the Sommerfeld value L0 = 2.44x10-8 W-ohm-K-2 at room temperature. The WF law reflects a basic property of metals where charge and heat are both carried by the same quasiparticles that both experience elastic scattering. At temperatures below the Debye temperature, the WF law has been experimentally shown to be robust in conventional conductors, with violations theoretically predicted or experimentally observed in strongly correlated electron systems or Luttinger liquids. However, the experimentally observed violations are at very low temperatures. Here we report breakdown of the WF law in a strongly correlated metal, in which the electronic thermal conductivity and L nearly vanish at temperatures above room temperature, where the electronic thermal conductivity amounts to only <~5% of the value expected from the WF law. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition.

  10. Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Kizuka, Hinako; Yagi, Takashi; Jia, Junjun; Yamashita, Yuichiro; Nakamura, Shinichi; Taketoshi, Naoyuki; Shigesato, Yuzo

    2015-05-01

    Thermal conductivity of a 300-nm-thick VO2 thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2 and Mo/VO2/Mo films with a VO2 thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2 films were deposited by reactive rf magnetron sputtering using a V2O3 target and an Ar-O2 mixture gas at 645 K. The VO2 films consisted of single phase VO2 as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2 film decreased abruptly from 6.3 × 10-1 to 5.3 × 10-4 Ω cm across the TMIT of around 325-340 K. The thermal conductivity of the VO2 film increased from 3.6 to 5.4 W m-1 K-1 across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.

  11. Metal-insulator transition in SrTi1-xVxO3 thin films

    NASA Astrophysics Data System (ADS)

    Gu, Man; Wolf, Stuart; Lu, Jiwei

    2014-03-01

    Epitaxial SrTi1-xVxO3 (0 <= x <= 1) thin films with thicknesses of ~ 16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for the film with x = 0.67. The films with higher vanadium concentration (x >0.67) were metallic, and the electrical resistivity followed the T2 law corresponding to a Fermi liquid system. In the insulating region of x <0.67, the temperature dependence of electrical resistivity for the x = 0.5 and 0.33 films can be scaled with Mott's variable range hopping model. The possible mechanism behind the observed MIT might be associated the interplay between electron-electron interactions and disorder-induced localization. The Ti4+ ion substitution introduces Anderson-localized states as well as lattice distortions that result in a reduction in the effective 3d bandwidth W. We gratefully acknowledge the financial support from the Army Research Office through MURI grant No. W911-NF-09-1-0398.

  12. Metal-insulator transition induced in CaVO{sub 3} thin films

    SciTech Connect

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  13. Universal and Non-universal Behavior at the Metal Insulator Transition.

    NASA Astrophysics Data System (ADS)

    Helgren, Erik; Zeng, Li; Querlioz, Damien; Hellman, Frances

    2006-03-01

    A metal-insulator transition in amorphous metal semiconductor alloys is known to exist at dopant concentrations much higher (˜ 12 at. %) than their crystalline counterparts[1]. We have studied the MIT in alloys grown using MBE for a series of semiconductor matrices, Si, Ge and both C and H-C (hydrogenated carbon) for various dopants (magnetic Gd and non-magnetic Y and Nb), as a function of concentration and magnetic field tuning. We compare the temperature dependence of the DC conductivity in the magnetically doped systems to the non-magnetic systems and to crystalline doped semiconductors (i.e. Si:P). Results are discussed in terms of a theoretical model that incorporates both disorder and electronic correlations[2]. This model correctly describes many universally observed aspects including the remarkably similar temperature dependence of the metallic and insulating DC conductivity of crystalline and amorphous systems, despite the vastly different disorder and electron concentration. There are however very significant variations in the prefactors that control the magnitude of the conductivity, which we correlate with the microscopic physics of each system. [1] F. Hellman et al. PRL 77, 4652 [2] Lee and Ramakrishnan RMP 57, 287

  14. Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

    NASA Astrophysics Data System (ADS)

    Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

    2007-03-01

    We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

  15. Novel Electronic Behavior Driving NdNiO3 Metal-Insulator Transition.

    PubMed

    Upton, M H; Choi, Yongseong; Park, Hyowon; Liu, Jian; Meyers, D; Chakhalian, J; Middey, S; Kim, Jong-Woo; Ryan, Philip J

    2015-07-17

    We present evidence that the metal-insulator transition (MIT) in a tensile-strained NdNiO3 (NNO) film is facilitated by a redistribution of electronic density and that it neither requires Ni charge disproportionation nor a symmetry change [U. Staub et al., Phys. Rev. Lett. 88, 126402 (2002); R. Jaramillo et al., Nat. Phys. 10, 304 (2014)]. Given that epitaxial tensile strain in thin NNO films induces preferential occupancy of the e(g) d(x(2)-y(2)) orbital we propose that the larger transfer integral of this orbital state with the O 2p orbital state mediates a redistribution of electronic density from the Ni atom. A decrease in the Ni d(x(2)-y(2)) orbital occupation is directly observed by resonant inelastic x-ray scattering below the MIT temperature. Furthermore, an increase in the Nd charge occupancy is measured by x-ray absorption at the Nd L(3) edge. Both spin-orbit coupling and crystal field effects combine to break the degeneracy of the Nd 5d states, shifting the energy of the Nd e(g) d(x(2)-y(2)) orbit towards the Fermi level, allowing the A site to become an active acceptor during the MIT. This work identifies the relocation of electrons from the Ni 3d to the Nd 5d orbitals across the MIT. We propose that the insulating gap opens between the Ni 3d and O 2p states, resulting from Ni 3d electron localization. The transition seems to be neither a purely Mott-Hubbard transition nor a simple charge transfer. PMID:26230808

  16. Mg doping of thermochromic VO2 films enhances the optical transmittance and decreases the metal-insulator transition temperature

    NASA Astrophysics Data System (ADS)

    Mlyuka, N. R.; Niklasson, G. A.; Granqvist, C. G.

    2009-10-01

    Thermochromic films of MgxV1-xO2 were made by reactive dc magnetron sputtering onto heated glass. The metal-insulator transition temperature decreased by ˜3 K/at. %Mg, while the optical transmittance increased concomitantly. Specifically, the transmittance of visible light and of solar radiation was enhanced by ˜10% when the Mg content was ˜7 at. %. Our results point at the usefulness of these films for energy efficient fenestration.

  17. Mid-infrared properties of a VO2 film near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Choi, H. S.; Ahn, J. S.; Jung, J. H.; Noh, T. W.; Kim, D. H.

    1996-08-01

    A VO2 film was grown on a sapphire(0001) substrate using pulsed laser deposition. The film showed a first-order metal-insulator (MI) transition and its dc conductivity started to increase drastically near 68 °C and changed by three orders of magnitude. Mid-infrared transmittance and reflectance spectra of the VO2 film were measured between 20 °C and 90 °C. Using the intensity transfer-matrix method, the frequency-dependent dielectric constant ɛf(ω) and the conductivity σf(ω) of the film were obtained between 1600 and 4000 cm-1 from the measured transmittance and reflectance spectra. With the ɛf(ω) and σf(ω) spectra, mid-infrared properties of the VO2 film near the MI transition region were investigated in detail. Above 78 °C, ɛf(ω)<0 and dɛf/dω>0, which is a typical metallic behavior. In particular, ɛf(ω) and σf(ω) at 88 °C were analyzed in terms of extended Drude model in which the frequency-dependent scattering rate and the effective mass could be obtained. The mean free path of charge carriers in the dc limit was estimated to be larger by an order of magnitude than the previously reported value, i.e., 4 Å. Below 74 °C, ɛf(ω)>0 and dɛf/dω~=0, which is characteristic of an insulator. Interestingly, ɛf in the insulating region increased as the temperature approached the MI transition temperature. To explain this anomalous behavior, the MI transition of the VO2 film was modeled with coexistence of metallic and insulating domains and their dynamic evolution. Then the behaviors of ɛf(ω) and σf(ω) were explained using the effective medium approximation, which is a mean-field theory predicting a percolation transition. This work clearly demonstrates that the transport and optical properties near the MI transition region are strongly influenced by the connectivity of the metallic domains.

  18. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    PubMed Central

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-01-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

  19. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-03-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.

  20. Superconductor-Metal-Insulator Transitions in two dimensional amorphous NbxSi1-x

    NASA Astrophysics Data System (ADS)

    Humbert, Vincent; Couëdo, François; Crauste, Olivier; Bergé, Laurent; Drillien, Anne-Aelle; Akiko Marrache-Kikuchi, Claire; Dumoulin, Louis

    2014-12-01

    We report on the study of the two-dimensional Disorder-induced Superconductor- Insulator Transition (D-SIT) in NbxSi1-x thin films. In this proceeding, we present new results on the emergence of an insulating state from a 2d metallic state.

  1. Metal-insulator transition in an one-dimensional half-filled interacting mesoscopic ring with spinless fermions: Exact results

    NASA Astrophysics Data System (ADS)

    Saha, Madhumita; Maiti, Santanu K.

    2016-04-01

    We calculate persistent current of one-dimensional rings of fermions neglecting the spin degrees of freedom considering only nearest-neighbor Coulomb interactions with different electron fillings in both ordered and disordered cases. We treat the interaction exactly and find eigenenergies by exact diagonalization of many-body Hamiltonian and compute persistent current by numerical derivative method. We also determine Drude weight to estimate the conducting nature of the system. From our numerical results, we obtain a metal-insulator transition in half-filled case with increasing correlation strength U but away from half-filling no such transition is observed even for large U.

  2. Strain-induced significant increase in metal-insulator transition temperature in oxygen-deficient Fe oxide epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Hirai, Kei; Kan, Daisuke; Ichikawa, Noriya; Mibu, Ko; Yoda, Yoshitaka; Andreeva, Marina; Shimakawa, Yuichi

    2015-01-01

    Oxygen coordination of transition metals is a key for functional properties of transition-metal oxides, because hybridization of transition-metal d and oxygen p orbitals determines correlations between charges, spins and lattices. Strain often modifies the oxygen coordination environment and affects such correlations in the oxides, resulting in the emergence of unusual properties and, in some cases, fascinating behaviors. While these strain effects have been studied in many of the fully-oxygenated oxides, such as ABO3 perovskites, those in oxygen-deficient oxides consisting of various oxygen coordination environments like tetrahedra and pyramids as well as octahedra remain unexplored. Here we report on the discovery of a strain-induced significant increase, by 550 K, in the metal-insulator transition temperature of an oxygen-deficient Fe oxide epitaxial thin film. The observed transition at 620 K is ascribed to charge disproportionation of Fe3.66+ into Fe4+ and Fe3+, associated with oxygen-vacancy ordering. The significant increase in the metal-insulator transition temperature, from 70 K in the bulk material, demonstrates that epitaxial growth of oxygen-deficient oxides under substrate-induced strain is a promising route for exploring novel functionality.

  3. Strain-induced significant increase in metal-insulator transition temperature in oxygen-deficient Fe oxide epitaxial thin films

    PubMed Central

    Hirai, Kei; Kan, Daisuke; Ichikawa, Noriya; Mibu, Ko; Yoda, Yoshitaka; Andreeva, Marina; Shimakawa, Yuichi

    2015-01-01

    Oxygen coordination of transition metals is a key for functional properties of transition-metal oxides, because hybridization of transition-metal d and oxygen p orbitals determines correlations between charges, spins and lattices. Strain often modifies the oxygen coordination environment and affects such correlations in the oxides, resulting in the emergence of unusual properties and, in some cases, fascinating behaviors. While these strain effects have been studied in many of the fully-oxygenated oxides, such as ABO3 perovskites, those in oxygen-deficient oxides consisting of various oxygen coordination environments like tetrahedra and pyramids as well as octahedra remain unexplored. Here we report on the discovery of a strain-induced significant increase, by 550 K, in the metal-insulator transition temperature of an oxygen-deficient Fe oxide epitaxial thin film. The observed transition at 620 K is ascribed to charge disproportionation of Fe3.66+ into Fe4+ and Fe3+, associated with oxygen-vacancy ordering. The significant increase in the metal-insulator transition temperature, from 70 K in the bulk material, demonstrates that epitaxial growth of oxygen-deficient oxides under substrate-induced strain is a promising route for exploring novel functionality. PMID:25600001

  4. First-order metal-insulator transition not accompanied by the structural phase transition observed in VO2-based devices

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Tak; Chae, Byung-Gyu; Kim, Bong-Jun; Lee, Yong-Wook; Yun, Sun-Jin; Kang, Kwang-Yong

    2006-03-01

    An abrupt first-order metal-insulator transition (MIT) is observed during the application of a switching pulse voltage to VO2-based two-terminal devices. When the abrupt MIT occurs, the structural phase transition (SPT) is investigated by a micro- Raman spectroscopy and a micro-XRD. The result shows that the MIT is not accompanied with the structural phase transition (SPT); the abrupt MIT is prior to the SPT. Moreover, any switching pulse over a threshold voltage of 7.1 V for the MIT enabled the device material to transform efficiently from an insulator to a metal. The measured delay time from the source switching pulse to an induced MIT pulse is an order of 20 nsec which is much less than a delay time of about one msec deduced by thermal model. This indicates that the first-order MIT does not occur due to thermal. We think this MIT is the Mott transition. (Reference: New J. Phys. 6 (1994) 52 (www.njp.org), Appl. Phys. Lett. 86 (2005) 242101, Physica B 369 (2005. December) xxxx)

  5. Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates.

    PubMed

    Hou, Jiwei; Wang, Xi; Fu, Deyi; Ko, Changhyun; Chen, Yabin; Sun, Yufei; Lee, Sangwook; Wang, Kevin X; Dong, Kaichen; Sun, Yinghui; Tongay, Sefaattin; Jiao, Liying; Yao, Jie; Liu, Kai; Wu, Junqiao

    2016-08-01

    The atomic thickness and flatness allow properties of 2D semiconductors to be modulated with influence from the substrate. Reversible modulation of these properties requires an "active," reconfigurable substrate, i.e., a substrate with switchable functionalities that interacts strongly with the 2D overlayer. In this work, the photoluminescence (PL) of monolayer molybdenum disulfide (MoS2 ) is modulated by interfacing it with a phase transition material, vanadium dioxide (VO2 ). The MoS2 PL intensity is enhanced by a factor of up to three when the underlying VO2 undergoes the thermally driven phase transition from the insulating to metallic phase. A nonvolatile, reversible way to rewrite the PL pattern is also demonstrated. The enhancement effect is attributed to constructive optical interference when the VO2 turns metallic. This modulation method requires no chemical or mechanical processes, potentially finding applications in new switches and sensors. PMID:27335137

  6. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide.

    PubMed

    Booth, Jamie M; Drumm, Daniel W; Casey, Phil S; Smith, Jackson S; Seeber, Aaron J; Bhargava, Suresh K; Russo, Salvy P

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  7. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    PubMed Central

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  8. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-05-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

  9. Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface

    NASA Astrophysics Data System (ADS)

    Puls, Conor P.; Cai, Xinxin; Zhang, Yuhe; Peng, Jin; Mao, Zhiqiang; Liu, Ying

    2014-06-01

    We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on the ab face of a thin Ca3Ru2O7 flake exfoliated from bulk single crystals that were grown by a floating zone method. The devices were categorized into two types: those with their electrical transport properties dominated by c-axis transport in type A or that of the in-plane in type B devices. Bulk physical phenomena, including a magnetic transition near 56 K, a structural and metal-insulator transition at a slightly lower temperature, as well as the emergence of a highly unusual metallic state as the temperature is further lowered, were found in both types of devices. However, the Shubnikov-de Haas oscillations were found in type A but not type B devices, most likely due to enhanced disorder on the flake surface. Finally, the ionic liquid gating of a type B device revealed a shift in critical temperature of the structural and metal-insulator transition, suggesting that this transition is tunable by the electric field effect.

  10. Metal insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

    NASA Astrophysics Data System (ADS)

    Silwal, Punam; Miao, Ludi; Stern, Ilan; Zhou, Xiaolan; Hu, Jin; Ho Kim, Dae

    2012-01-01

    We have grown epitaxial thin films of spinel NiCo2O4 on single crystalline MgAl2O4 (001) substrates by pulsed laser deposition. Magnetization measurement revealed hysteresis loops consistent with the reported ferrimagnetic order. The electrical transport exhibits a metallic behavior with the lowest resistivity of 0.8 mΩ cm and a metal insulator transition around the Néel temperature. The systematic variation in the properties of the films grown at different growth temperatures indicates a close relationship between the magnetic order and electrical transport.

  11. Magnetic and Metal-Insulator Transition in natural Transition Metal Sulfides

    NASA Astrophysics Data System (ADS)

    Wang, Renxiong; Metz, Tristin; Liu, I.-Lin; Wang, Kefeng; Wang, Xiangfeng; Jeffries, J. R.; Saha, S. R.; Greene, R. L.; Paglione, J.; Santelli, C. C.; Post, J.,

    In collaboration with the Smithsonian Institution's National Museum of Natural History, we present detailed studies of a class of natural minerals with potential to harbor correlated behavior. Transition metal sulfide minerals, such as Bornite (Cu5FeS4), are an important family of compounds known for their thermoelectric properties. We will present low temperature experimental studies of magnetic transitions and focus on a compound that exhibits a metal to insulator transition concident with entrance to an antiferromagnetic ground state, suggesting a potentially interesting system with promise for realizing new correlated states of matter in a naturally occurring mineral.

  12. Topological textures and metal-insulator transition in Reentrant Integer Quantum Hall Effect: role of disorder

    NASA Astrophysics Data System (ADS)

    Lyanda-Geller, Yuli; Simion, George

    2015-03-01

    We investigate a ground state of the two-dimensional (2D) electron liquid in the presence of disorder for Landau level filling factors, for which the re-entrant integer quantum Hall effect is observed. Our particular interest is the range of filling factors, which in a clean 2D system is favorable to formation of the two-electron (2e) bubble crystal. For the smooth random potential due to charged impurities placed far away from the 2D gas, the ground state is a lightly distorted 2e bubble crystal. However, for positively or negatively charged residual impurities located approximately within about three magnetic lengths from the 2D electrons, the ground state contains charged 2e complexes formed either by positively charged impurity and 3e defect bubble, or negatively charged impurity and 2e defect bubble. In the vicinity of 1e and 3e defect bubbles, the 2e bubbles of the crystal change their shape from round to elongated forming hedgehog (for 1e defect) or vortex (for 3e defect) textures. The topological textures due to these complexes interact with vortex and hedgehog excitations, generated as temperature increases that are not bound by residual impurities. The temperature of insulator to metal transition calculated with both bound and unbound defects agrees with experiment. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  13. Bond formation effects on the metal-insulator transition in the half-filled kagome Hubbard model

    NASA Astrophysics Data System (ADS)

    Higa, Ryota; Asano, Kenichi

    2016-06-01

    We study the metal-insulator transition in the half-filled Hubbard model on a Kagome lattice using the variational cluster approximation. The strong coupling limit of the model corresponds to the S =1 /2 Kagome Heisenberg antiferromagnet, which is known to have a singlet ground state, although its detail is still debated. As the results of the cluster methods generally depend much on the choice of the unit cluster, we have chosen the clusters that are compatible with these singlet ground states in the strong coupling case found so far, which basically consist of even number of sites. It is found that the correlated electrons on the Kagome lattice have a strong tendency to form valence-bond structures, which are the resonation of electrons on a single bond or several bonds forming loops. The zero-temperature metal-insulator transition at some interaction strength is possibly driven by the formation of such short range valence bonds and shows a second order character, which is distinctive from the Brinkman-Rice scenario. The electrons on these valence bonds further localizes onto each site as the interaction increases, and the valence bonds of electrons finally turn into magnetic singlet bonds between localized S =1 /2 spins, which are consistent with the ground states of the Kagome antiferromagnet.

  14. Relative Influence of Intrinsic and Extrinsic Factors on the Metal-Insulator Transition of VO2 Nanowires

    NASA Astrophysics Data System (ADS)

    Kim, In Soo

    The influence of stoichiometry on the metal-insulator transition of vanadium dioxide (VO2) nanowires was investigated using Raman spectroscopy. Controlled reduction of nominally strain-free suspended VO2 nanowires was conducted by rapid thermal annealing (RTA). The deficiency in oxygen assisted in the unprecedented suppression of the metallic (R) phase to temperatures as low as 103 K through generation of free electrons. In a complementary manner, oxygen-rich conditions stabilized the metastable monoclinic (M2) and triclinic (T) phases. A pseudo-phase diagram with dimensions of temperature and stoichiometry was established, highlighting the accessibility of new phases in the nanowire geometry. Detection of the dynamic elastic response across the metal-insulator transition in suspended VO2 nanowires was enabled by fiber-coupled polarization dependent interferometry. Dual-beam Raman spectroscopy was developed to determine the local domain/phase structure of VO2 nanowires, which allowed for accurate modeling using COMSOL finite element analysis (FEA). The Young's moduli of the single crystal insulating (M1) and metallic (R) phases without artifacts were determined for the first time. The sources of dissipation were identified as clamping losses, structural losses, thermoelastic damping, and domain wall motion. While contribution of thermoelastic damping was found to be dominant in the terminal phases, extraordinary dissipation was observed upon formation and movement of domain walls. Finally, it was shown that creation of local defects could lead to new classes of tunable sensors with a discrete and programmable frequency response with temperature.

  15. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    NASA Astrophysics Data System (ADS)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  16. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3 Ru 2 O 7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Zhu, Z. H.; Bohnenbuck, B.; Chuang, Y.-D.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Elfimov, I. S.; Sawatzky, G. A.; Damascelli, A.

    2011-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr 3 (Ru 1-x Mn x)2 O7 , performed at both Ru and Mn L -edges. Resonant magnetic superstructure reflections together with ab-initio density functional theory calculations identify the ground state as a spin checkerboard with blocks of 4 spins up and 4 spins down. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x ~ 0.05 Mn substitution. Perhaps more important, our results suggest that the same checkerboard instability might be present already in the parent compound Sr 3 Ru 2 O7 . In collaboration with: A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley) I. Zegkinoglou, M.W. Haverkort (MPI) J. Geck, D.G. Hawthorn (UBC) R. Mathieu, Y. Tokura, S. Satow, H. Takagi (Tokyo) H.-H. Wu and C. Schussler-Langeheine (Cologne).

  17. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    PubMed Central

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  18. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    NASA Astrophysics Data System (ADS)

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.

  19. Metal-insulator transition in NiS2-x Se x : chemical vs external pressure effects

    NASA Astrophysics Data System (ADS)

    Marini, C.; Valentini, M.; Perucchi, A.; Dore, P.; Sarma, D. D.; Lupi, S.; Postorino, P.

    2011-03-01

    The Se alloying (x)- and the pressure (P)-induced metal-insulator transitions on the strongly correlated NiS2-x Se x system have been investigated through Raman and infrared (IR) spectroscopies. Raman and IR responses of NiS2 to lattice compression are correlated to a metallization transition, occurring at ∼4 GPa. This result suggests a strong interaction between lattice and electronic degrees of freedom. In particular, IR measurements carried out by applying P on NiS2 (i.e. lattice contraction) and on Se alloying (i.e. lattice expansion) reveal that in both cases a metallic state is obtained. Our optical spectroscopy results deviate from the idea of a simple scaling factor between P and x previously claimed by transport measurements, but, on the contrary, point out the substantially different microscopic origin of the two transitions.

  20. Mott metal-insulator transition induced by utilizing a glasslike structural ordering in low-dimensional molecular conductors

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Müller, Jens; Sasaki, Takahiko

    2014-11-01

    We utilize a glasslike structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt κ -(BEDT-TTF)2Cu [N (CN)2Br ]. In this material, the terminal ethylene groups of the BEDT-TTF molecules can adopt two different structural orientations within the crystal structure, namely eclipsed (E) and staggered (S) with the relative orientation of the outer C-C bonds being parallel and canted, respectively. These two conformations are thermally disordered at room temperature and undergo a glasslike ordering transition at Tg˜75 K. When cooling through Tg, a small fraction that depends on the cooling rate remains frozen in the S configuration, which is of slightly higher energy, corresponding to a controllable degree of structural disorder. We demonstrate that, when thermally coupled to a low-temperature heat bath, a pulsed heating current through the sample causes a very fast relaxation with cooling rates at Tg of the order of several 1000 K /min . The freezing of the structural degrees of freedom causes a decrease of the electronic bandwidth W with increasing cooling rate, and hence a Mott metal-insulator transition as the system crosses the critical ratio (W/U ) c of bandwidth to on-site Coulomb repulsion U . Due to the glassy character of the transition, the effect is persistent below Tg and can be reversibly repeated by melting the frozen configuration upon warming above Tg. Both by exploiting the characteristics of slowly changing relaxation times close to this temperature and by controlling the heating power, the materials can be fine-tuned across the Mott transition. A simple model allows for an estimate of the energy difference between the E and S state as well as the accompanying degree of frozen disorder in the population of the two orientations.

  1. Density functional plus dynamical mean-field theory of the metal-insulator transition in early transition-metal oxides

    NASA Astrophysics Data System (ADS)

    Dang, Hung T.; Ai, Xinyuan; Millis, Andrew J.; Marianetti, Chris A.

    2014-09-01

    The combination of density functional theory and single-site dynamical mean-field theory, using both Hartree and full continuous-time quantum Monte Carlo impurity solvers, is used to study the metal-insulator phase diagram of perovskite transition-metal oxides of the form ABO3 with a rare-earth ion A =Sr, La, Y and transition metal B =Ti, V, Cr. The correlated subspace is constructed from atomiclike d orbitals defined using maximally localized Wannier functions derived from the full p-d manifold; for comparison, results obtained using a projector method are also given. Paramagnetic DFT + DMFT computations using full charge self-consistency along with the standard "fully localized limit" (FLL) double counting are shown to incorrectly predict that LaTiO3, YTiO3, LaVO3, and SrMnO3 are metals. A more general examination of the dependence of physical properties on the mean p-d energy splitting, the occupancy of the correlated d states, the double-counting correction, and the lattice structure demonstrates the importance of charge-transfer physics even in the early transition-metal oxides and elucidates the factors underlying the failure of the standard approximations. If the double counting is chosen to produce a p-d splitting consistent with experimental spectra, single-site dynamical mean-field theory provides a reasonable account of the materials properties. The relation of the results to those obtained from "d-only" models in which the correlation problem is based on the frontier orbital p-d antibonding bands is determined. It is found that if an effective interaction U is properly chosen the d-only model provides a good account of the physics of the d1 and d2 materials.

  2. Theory of the metal-insulator transition in Pr Ru4 P12 and Pr Fe4 P12

    NASA Astrophysics Data System (ADS)

    Curnoe, S. H.; Harima, H.; Takegahara, K.; Ueda, K.

    2004-12-01

    All symmetry-allowed couplings between the 4f2 -electron ground state doublet of trivalent praseodymium in PrRu4P12 and PrFe4P12 and displacements of the phosphorus, iron, or ruthenium ions are considered. Two types of displacements can change the crystal lattice from body-centred cubic to simple orthorhombic or to simple cubic. The first type lowers the point group symmetry from tetrahedral to orthorhombic, while the second type leaves it unchanged, with corresponding space group reductions Im3¯→Pmmm and Im3¯→Pm3¯ , respectively. In former case, the lower point group symmetry splits the degeneracy of the 4f2 doublet into states with opposite quadrupole moment, which then leads to antiquadrupolar ordering, as in PrFe4P12 . Either kind of displacement may conspire with nesting of the Fermi surface to cause the metal-insulator or partial metal-insulator transition observed in PrFe4P12 and PrRu4P12 . We investigate this scenario using band-structure calculations, and it is found that displacements of the phosphorus ions in PrRu4P12 (with space-group reduction Im3¯→Pm3¯ ) open a gap everywhere on the Fermi surface.

  3. Pressure-driven metal-insulator transition in BiFeO3 from dynamical mean-field theory

    NASA Astrophysics Data System (ADS)

    Shorikov, A. O.; Lukoyanov, A. V.; Anisimov, V. I.; Savrasov, S. Y.

    2015-07-01

    A metal-insulator transition (MIT) in BiFeO3 under pressure was investigated by a method combining generalized gradient corrected local density approximation with dynamical mean-field theory (GGA+DMFT). Our paramagnetic calculations are found to be in agreement with the experimental phase diagram: Magnetic and spectral properties of BiFeO3 at ambient and high pressures were calculated for three experimental crystal structures R 3 c , P b n m , and P m 3 ¯m . At ambient pressure in the R 3 c phase, an insulating gap of 1.2 eV was obtained in good agreement with its experimental value. Both R 3 c and P b n m phases have a metal-insulator transition that occurs simultaneously with a high-spin (HS) to low-spin (LS) transition. The critical pressure for the P b n m phase is 25-33 GPa, which agrees well with the experimental observations. The high-pressure and -temperature P m 3 ¯m phase exhibits a metallic behavior observed experimentally as well as in our calculations in the whole range of considered pressures and undergoes the LS state at 33 GPa, where a P b n m to P m 3 ¯m transition is experimentally observed. The antiferromagnetic GGA+DMFT calculations carried out for the P b n m structure result in simultaneous MIT and HS-LS transitions at a critical pressure of 43 GPa in agreement with the experimental data.

  4. Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

    NASA Astrophysics Data System (ADS)

    Liao, G. M.; Chen, S.; Fan, L. L.; Chen, Y. L.; Wang, X. Q.; Ren, H.; Zhang, Z. M.; Zou, C. W.

    2016-04-01

    Insulator to metal phase transitions driven by external electric field are one of the hottest topics in correlated oxide study. While this electric triggered phenomena always mixes the electric field switching effect and joule thermal effect together, which are difficult to clarify the intrinsic mechanism. In this paper, we investigate the dynamical process of voltage-triggered metal-insulator transition (MIT) in a VO2 crystal film and observe the temperature dependence of the threshold voltages and switching delay times, which can be explained quite well based on a straightforward joule thermal model. By conducting the voltage controlled infrared transmittance measurement, the delayed infrared transmission change is also observed, further confirming the homogeneous switching process for a large-size film. All of these results show strong evidences that joule thermal effect plays a dominated role in electric-field-induced switching of VO2 crystal.

  5. Full-configuration-interaction study of the metal-insulator transition in model systems: Peierls dimerization in H(n) rings and chains.

    PubMed

    Giner, Emmanuel; Bendazzoli, Gian Luigi; Evangelisti, Stefano; Monari, Antonio

    2013-02-21

    The Peierls dimerization with associated metal-insulator transition is studied in a model systems with ab initio methods. These are chains and rings H(N) of hydrogen atoms treated by full CI using a minimal STO-3G atomic orbital basis for N = 6 to N = 14. We describe and discuss in some detail the potential energy surface governing Peierls' dimerization and study the localization tensor as the indicator of the metal-insulator transition. Results for linear chains and rings are compared. PMID:23445017

  6. Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films

    NASA Astrophysics Data System (ADS)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2016-05-01

    The metal-insulator switching characteristics of VO2 play a crucial role in the performances of VO2-based devices. In this paper we study high-quality (010)-oriented epitaxial films grown on (001) sapphire substrates by means of electron-beam evaporation and investigate the role of interface defects and thermal strain on the parallel evolution of the metal-insulator transition (MIT) and structural phase transition (SPT) between the monoclinic (insulator) and rutile (metal) phases. It is demonstrated that the highly-mismatched VO2/Al2O3 interface promotes a domain-matching epitaxial growth process where the film grows in a strain-relaxed state and the lattice distortions are confined at the interface in regions with limited spatial extent. Upon cooling down from the growth temperature, tensile strain is stored in the films as a consequence of the thermal expansion mismatch between VO2 and Al2O3 . The thinnest films exhibit the highest level of tensile strain in the interfacial plane resulting in a shift of both the MIT and the SPT temperatures towards higher values, pointing to a stabilization of the monoclinic/insulating phase. Concomitantly, the electrical switching characteristics are altered (lower resistivity ratio and broader transition) as a result of the presence of structural defects located at the interface. The SPT exhibits a similar evolution with, additionally, a broader hysteresis due to the formation of an intermediate, strain-stabilized phase in the M1-R transition. Films with thickness ranging between 100-300 nm undergo a partial strain relaxation and exhibit the best performances, with a sharp (10°C temperature range) and narrow (hysteresis <4°C) MIT extending over more than four orders of magnitude in resistivity (6 ×104 ).

  7. The finite size effect on the metal-insulator transition of MOCVD grown VO{sub 2} films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  8. The finite size effect on the metal-insulator transition of MOCVD grown VO sub 2 films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  9. Effect of crystal-field splitting and interband hybridization on the metal-insulator transitions of strongly correlated systems

    NASA Astrophysics Data System (ADS)

    Poteryaev, Alexander I.; Ferrero, Michel; Georges, Antoine; Parcollet, Olivier

    2008-07-01

    We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.

  10. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model. PMID:27136956

  11. Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Yoon, Joonseok; Kim, Howon; Mun, Bongjin Simon; Park, Changwoo; Ju, Honglyoul

    2016-03-01

    The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO2) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO2. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO2 can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.

  12. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

    PubMed

    Fan, L L; Chen, S; Liao, G M; Chen, Y L; Ren, H; Zou, C W

    2016-06-29

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future. PMID:27168422

  13. Tuning the metal-insulator transition temperature of Sm0.5Nd0.5NiO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gardner, H. Jeffrey; Singh, Vijay; Zhang, Le; Hong, Xia

    2014-03-01

    We have investigated the effect of substrate induced strain and film thickness on the metal-insulator transition of the correlated oxide Sm0.5Nd0.5NiO3 (SNNO). We have fabricated epitaxial 3 - 40 nm thick SNNO films on (001) LaAlO3 (LAO), (001) SrTiO3 (STO), and (110) NdGaO3 (NGO) via off-axis RF magnetron sputtering. The SNNO films are atomically smooth with (001) orientation as determined by atomic force microscopy and x-ray diffraction. SNNO films grown on LAO, subject to compressive strain, exhibit a sharp metal-insulator transition at lower temperatures. Conversely, films grown on STO and NGO, subject to tensile strain, exhibit a smeared albeit above room temperature metal-insulator transition. For all substrates, we have observed that the metal-insulator transition temperature (TMI) increases monotonically with decreasing film thickness until the electrically dead layer is reached (below 4 nm). We discuss the effect of strain and oxygen deficiencies on the TMI of SNNO thin films.

  14. Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

    NASA Astrophysics Data System (ADS)

    Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

    Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

  15. Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2014-10-01

    The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x =0-0.06) grown on α-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S | values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in a good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T>TS were constant at low values of 23μVK-1 independently of x, which reflects a metallic electronic structure, whereas those at T

  16. Giant oxygen isotope effect on the metal-insulator transition of RNiO{sub 3} perovskites

    SciTech Connect

    Medarde, M.; Fauth, F.; Furrer, A.; Lacorre, P.; Conder, K.

    1998-08-01

    The metal to insulator transition displayed by all the members of the perovskite family RNiO{sub 3} (R = 4f rare earth different from La) has attracted a lot of interest since it constitutes one of the few examples of this phenomenon in perfectly stoichiometric compounds. In spite of the great deal of work performed during the last six years, the mechanism responsible for the electronic localization is still a matter of controversy. The observation of unusually large O isotope shifts on the metal-insulator temperature T{sub MI} reported in this study represents an important advance since it clearly proves the dominant role of the electron lattice interaction as driving force for the transition. Moreover, the good agreement between this observation and a simple model based on the existence of Jahn-Teller polarons in the metallic state gives further qualitative and quantitative support to the polaronic picture recently suggested to account for O isotope effects in other 3d transition metal oxides containing Jahn-Teller ions.

  17. Nanoscale Electrical Imaging of Metal-Insulator Transition in Ion-Gel Gated ZnO Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Ren, Yuan; Yuan, Hongtao; Wu, Xiaoyu; Iwasa, Yoshihiro; Cui, Yi; Hwang, Harold; Lai, Keji

    2015-03-01

    Electric double-layer transistors (EDLTs) using ionic liquid as the gate dielectric have demonstrated a remarkably wide range of density modulation, a condition crucial for the study of novel electronic phases in complex quantum materials. Yet little is known microscopically when carriers are modulated in the EDLT structure because of the technical challenge to image the buried electrolyte-semiconductor interface with nanoscale resolution. Using a cryogenic microwave impedance microscope, we demonstrate the real-space conductivity mapping in ZnO EDLTs with a spatial resolution of 100nm. A thin layer of ion gel, which solidifies below the glass transition temperature of 200K, was spin-coated on the ZnO surface to induce the metal-insulator transition. The microwave images acquired at different channel conductance clearly showed the spatial evolution of local conductivity through the transition. In addition, by applying a large source-drain bias, electrical inhomogeneity was also observed across the source and drain electrodes.

  18. Linear-in-temperature resistivity close to a topological metal insulator transition in ultra-multi valley fcc-ytterbium

    NASA Astrophysics Data System (ADS)

    Enderlein, Carsten; Fontes, Magda; Baggio-Saitovich, Elisa; Continentino, Mucio A.

    2016-01-01

    The semimetal-to-semiconductor transition in fcc-Yb under modest pressure can be considered a picture book example of a metal-insulator transition of the Lifshitz type. We have performed transport measurements at low temperatures in the closest vicinity of the transition and related DFT calculations of the Fermi surface. Our resistivity measurements show a linear temperature dependence with an unusually low dρ / dT at low temperatures approaching the MIT. The calculations suggest fcc-ytterbium being an ultra-multi valley system with 24 electron and 6 hole pockets in the Brillouin zone. Such Fermi surface topology naturally supports the appearance of strongly correlated phases. An estimation of the quasiparticle-enhanced effective mass shows that the scattering rate is by at least two orders of magnitude lower than in other materials which exhibit linear-in-T behavior at a quantum critical point. However, we cannot exclude an excessive effective mass enhancement, when the van Hove singularity touches the Fermi level.

  19. Metal-insulator transition in a spin-orbital-lattice coupled Mott system: K2V8O16

    NASA Astrophysics Data System (ADS)

    Kim, Sooran; Kim, Beom Hyun; Kim, Kyoo; Min, B. I.

    2016-01-01

    We have explored the underlying mechanism of the metal-insulator transition (MIT) in hollandite-type vanadate, K2V8O16 , which has a quasi-one-dimensional chain structure and undergoes the MIT and Peierls-like structural transition upon cooling. For this purpose, we have investigated its electronic and magnetic properties in comparison to those of Rb2V8O16 that also undergoes the MIT but without the Peierls-like structural distortion. We have found that K2V8O16 is a spin-orbital-lattice coupled Mott system and manifests the orbital-selective Mott transition. The interplay of on-site Coulomb interaction, the magnetic-exchange interaction, and the Jahn-Teller-type tetragonal distortion plays an essential role in driving the MIT of K2V8O16 , inducing the the charge ordering (CO) and orbital ordering of V t2 g bands. The CO of V+3 and V+4 occurs in separate chains, preserving the inversion symmetry of the crystal. The dx y orbitals form the spin-singlet state along the chain direction. The Peierls-like distortion does not play an essential role in the MIT.

  20. Dynamic phase coexistence and non-Gaussian resistance fluctuations in VO2 near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Samanta, Sudeshna; Raychaudhuri, A. K.; Zhong, Xing; Gupta, A.

    2015-11-01

    We have carried out an extensive investigation on the resistance fluctuations (noise) in an epitaxial thin film of VO2 encompassing the metal-insulator transition (MIT) region to investigate the dynamic phase coexistence of metal and insulating phases. Both flicker noise as well as the Nyquist noise (thermal noise) were measured. The experiments showed that flicker noise, which has a 1 /f spectral power dependence, evolves with temperature in the transition region following the evolution of the phase fractions and is governed by activated kinetics. Importantly, closer to the insulating end of the transition, when the metallic phase fraction is low, the magnitude of the noise shows an anomaly and a strong non-Gaussian component of noise develops. In this region, the local electron temperature (as measured through the Nyquist noise thermometry) shows a deviation from the equilibrium bath temperature. It is proposed that this behavior arises due to current crowding where a substantial amount of the current is carried through well separated small metallic islands leading to a dynamic correlated current path redistribution and an enhanced effective local current density. This leads to a non-Gaussian component to the resistance fluctuation and an associated local deviation of the electron temperature from the bath. Our experiment establishes that phase coexistence leads to a strong inhomogeneity in the region of MIT that makes the current transport strongly inhomogeneous and correlated.

  1. Field-induced quantum metal-insulator transition in the pyrochlore iridate Nd2Ir2O7

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming; Kohama, Yoshimitsu; Tomita, Takahiro; Ishizuka, Hiroaki; Hsieh, Timothy H.; Ishikawa, Jun J.; Kindo, Koichi; Balents, Leon; Nakatsuji, Satoru

    2016-02-01

    The metal-insulator transition (MIT) is a hallmark of strong correlation in solids. Quantum MITs at zero temperature have been observed in various systems tuned by either carrier doping or bandwidth. However, such transitions have rarely been induced by application of magnetic field, as normally the field scale is too small in comparison with the charge gap, whose size is a fraction of the Coulomb repulsion energy (~1 eV). Here we report the discovery of a quantum MIT tuned by a field of ~10 T, whose magnetoresistance exceeds 60,000%. In particular, our anisotropic magnetotransport measurements on the cubic insulator Nd2Ir2O7 (ref. ) reveal that the insulating state can be suppressed by such a field to a zero-temperature quantum MIT, but only for fields near the [001] axis. The strong sensitivity to the field direction is remarkable for a cubic crystal, as is the fact that the MIT can be driven by such a small magnetic field, given the 45 meV gap energy, which is of order of 50 times the Zeeman energy for an Ir4+ spin. The systematic change in the MIT from continuous near zero field to first order under fields indicates the existence of a tricritical point proximate to the quantum MIT. We argue that these phenomena imply both strong correlation effects on the Ir electrons and an active role for the Nd spins.

  2. Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2012-10-01

    We report here the strain dependent structural and electrical transport properties of epitaxial NdNiO{sub 3} thin films. Pulsed laser deposition technique was used to grow the NdNiO{sub 3} thin films on c-axis oriented SrTiO{sub 3} single crystals. Deposited films were irradiated using 200 MeV Ag{sup 15+} ion beam at the varying fluence (1 Multiplication-Sign 10{sup 11}, 5 Multiplication-Sign 10{sup 11}, and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2}). X-ray diffraction studies confirm the epitaxial growth of the deposited films, which is maintained even up to the highest fluence. Rise in the in-plane compressive strain has been observed after the irradiation. All the films exhibit metal-insulator transition, however, a systematic decrease in the transition temperature (T{sub MI}) has been observed after irradiation, which may be attributed to the increase in the in-plane compression. Raman spectroscopy data reveal that this reduction in T{sub MI}, with the irradiation, is related to the decrease in band gap due to the stress generated by the in-plane compressive strain.

  3. XPS and ARPES study of the metal-insulator transition in Mn-substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Zhu, Zhihuai; Levy de Castro, G.; Hossain, M. A.; Manju, U.; McCheyney, J. L.; Bostwick, A.; Rotenberg, E.; Yoshida, Y.; Elfimov, I. S.; Panaccione, G.; Damascelli, A.

    2010-03-01

    We have studied the metal-insulator transition in Mn-substituted Sr3Ru2O7 by core-level x-ray photoemission (XPS) and angle-resolved photoemission spectroscopy (ARPES). In XPS, both the surface- and bulk-sensitive spectra show a two-peak structure, corresponding to the well screened and the unscreened excitations. The intensity of the well-screened peak is suppressed upon increasing the concentration of Mn, reflecting a metal-to-insulator transition induced by Mn impurities. In ARPES, changes in Fermi surface topology and band dispersions are observed as the system crosses over from a metal to a - possibly Mott - insulator. We observed a variation and enhancement of the Fermi-surface nesting upon Mn substitution, which might be connected to the emergence of the magnetic superstructure revealed by our resonant elastic soft x-ray scattering results [1].[4pt] [1] M.A. Hossain et al., arXiv:0906.0035 (2009).

  4. Spatial Inhomogeneity in Oxygen Modulated Potassium Tungsten Oxide Thin Films: implications for superconductivity and metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Munakata, Ko; Luna, Katherine; Tsukada, Akio; Risbud, Subhash; Geballe, Theodore; Beasley, Malcolm

    2012-02-01

    High quality potassium tungsten oxide (K0.33 WOy) films were synthesized by pulsed laser deposition followed by annealing in vacuum. Oxygen concentration modulated anomalous correlation of metal-insulator and superconductivity transitions were studied; a similar scenario was recently suggested in the literature [1] for polycrystalline rubidium tungsten oxide samples. Detailed studies of the transport properties below and above the superconducting transition temperature exhibit a diversity of unexpected behavior. Some of our results can be interpreted as a signature of reduced dimensionality in the ab-plane in oxygen-rich insulating samples, implying a formation of spatially inhomogeneous electronic structure. We compare such phenomenology to the behavior of other materials with strong electron-phonon interactions, and discuss its implication for the possible high temperature superconducting anomaly in sodium tungsten oxides reported in the literature [2]. [1] D. C. Ling et. al., J. Phys. Conf. Ser. 150, 052141 (2009). [2] S. Reich, and Y. Tsabba, Eur. Phys. J. B 9, 1 (1999).

  5. Metal-insulator transition in Nd1-xEuxNiO3: Entropy change and electronic delocalization

    NASA Astrophysics Data System (ADS)

    Jardim, R. F.; Barbeta, V. B.; Andrade, S.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-01

    The metal-insulator (MI) phase transition in Nd1-xEuxNiO3, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat CP(T). The MI transition temperature (TMI) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dTMI/dP were found: (i) for x ≤ 0.15, dTMI/dP is nearly constant and ˜-4.3 K/kbar; (ii) for x ≥ 0.15, dTMI/dP increases with x and it seems to reach a saturation value ˜-6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of TMI. The entropy change (ΔS) at TMI for the sample x = 0, estimated by using the dTMI/dP data and the Clausius-Clapeyron equation, resulted in ΔS ˜ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔSM ˜ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and CP(T) data indicates that the entropy change at TMI is mainly due to the electronic delocalization and not related to the AF transition.

  6. Variation of optical conductivity spectra in the course of bandwidth-controlled metal-insulator transitions in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, K.; Fujioka, J.; Tokura, Y.

    2016-06-01

    We spectroscopically investigate a series of pyrochlore iridates R2Ir2O7 (R : rare-earth and Y ions) where the metal-insulator transitions are induced by systematic bandwidth control via chemical substitutions of R ions. We establish the phase diagram of R2Ir2O7 , as endorsed by the variation of the optical conductivity spectra, in which the competing phases including paramagnetic insulator (PI), paramagnetic metal (PM), and antiferromagnetic insulator (AFI) show up as a function of bandwidth and temperature. For small R -ionic radius (R = Y-Sm), i.e., strongly correlated region, pronounced peaks on the edge of the optical gap are discerned below the magnetic transition temperature TN, which is attributable to exciton and magnon sideband absorptions. It turns out that the estimated nearest-neighbor exchange interaction increases as R -ionic radius increases, whereas TN monotonically decreases, indicating that the all-in all-out magnetic order arises from the interplay among several exchange interactions inherent to extended 5 d orbitals on the frustrated lattice. For larger R -ionic radius (R = Sm-Pr), i.e., relatively weakly correlated region, the optical conductivity spectra markedly change below 0.3 eV in the course of PM-AFI transition, implying that the magnetic order induces the insulating state. In particular, we have found distinct electrodynamics in the composition of R =Nd0.5Pr0.5 which is located on the boundary of the quantum PM-AFI transition, pointing to the possible emergence of unconventional topological electronic phases related possibly to the correlated Weyl electrons.

  7. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  8. Tuning the metal-insulator transition in NdNiO3 heterostructures via Fermi surface instability and spin fluctuations

    NASA Astrophysics Data System (ADS)

    Dhaka, R. S.; Das, Tanmoy; Plumb, N. C.; Ristic, Z.; Kong, W.; Matt, C. E.; Xu, N.; Dolui, Kapildeb; Razzoli, E.; Medarde, M.; Patthey, L.; Shi, M.; Radović, M.; Mesot, Joël

    2015-07-01

    We employed in situ pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO3 (NNO) thin films, grown on NdGaO3(110) and LaAlO3(100) substrates. In the metallic phase, we observe three-dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with QAF˜(1 /4 ,1 /4 ,1 /4 ±δ ) .

  9. Growth temperature-dependent metal-insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

    NASA Astrophysics Data System (ADS)

    Wang, Liangxin; Yang, Yuanjun; Zhao, Jiangtao; Hong, Bin; Hu, Kai; Peng, Jinlan; Zhang, Haibin; Wen, Xiaolei; Luo, Zhenlin; Li, Xiaoguang; Gao, Chen

    2016-04-01

    Vanadium dioxide (VO2) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO3) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal-insulator transition (MIT) behavior of the VO2 epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 102 to 104 with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thus larger grain size in the (010)-VO2/(111)-SrTiO3 epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO2 films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO2 epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO2 films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO2 can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.

  10. The Si(1 1 1) (7 × 7) reconstruction: A surface close to a Mott Hubbard metal insulator transition?

    NASA Astrophysics Data System (ADS)

    Fick, D.; Bromberger, C.; Jänsch, H. J.; Kühlert, O.; Schillinger, R.; Weindel, C.

    2006-09-01

    Li adsorption at extremely low coverages on the "metallic" Si(1 1 1)-(7 × 7) surface has been experimentally studied recently by β-NMR experiments. Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α = 1/ T1 is almost constant in between 50 K and 300 K sample temperature and rises Arrhenius like above. In order to understand this behaviour in a transparent way a closed form analysis is presented using rectangular density of states distributions. The almost temperature independent relaxation rate below 300 K points to an extremely localized and thus narrow band (width about 10 meV) which pins the Fermi energy. Because of the steeply rising relaxation rate beyond 300 K it is located energetically within a gap (about 380 meV wide) in between a lower filled and an upper empty (Hubbard) band. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.

  11. Metallic Si (111) - (7×7) -reconstruction: A surface close to a Mott-Hubbard metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Schillinger, R.; Bromberger, C.; Jänsch, H. J.; Kleine, H.; Kühlert, O.; Weindel, C.; Fick, D.

    2005-09-01

    Li adsorption at extremely low coverages ( 10-3 ML and below) on the metallic Si(111)-(7×7) surface has been studied by β -NMR experiments (measurement of T1 -times). Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α=1/T1 is almost constant in between 50K and 300K sample temperature and rises considerably above. Comparison with T1 -times around 900K (observed with Li6 -NMR) excludes adsorbate diffusion as the cause of the relaxation rate. Thus the almost temperature independent relaxation rate below 300K points to an extremely localized and thus narrow band (width about 10meV ) which pins the Fermi energy. It is responsible for the metallicity of the (7×7) -reconstruction. Because of the steeply rising relaxation rate beyond 300K this narrow band is located energetically within a gap (approximately 100-500meV wide) in between a lower filled and an upper empty (Hubbard) band. Due to its extremely narrow width it can hardly be detected in photo electron experiments. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.

  12. Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

    NASA Astrophysics Data System (ADS)

    Hooda, M. K.; Yadav, C. S.

    2016-06-01

    We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m*~8me) in the metallic state indicates the narrow character of the 3d band. The electric conduction at low temperatures (T=2-20 K) is governed by the variable range hopping of the charge carriers.

  13. Metal-Insulator Transition in VO2 : A DFT +DMFT Perspective

    NASA Astrophysics Data System (ADS)

    Brito, W. H.; Aguiar, M. C. O.; Haule, K.; Kotliar, G.

    2016-07-01

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M1 and M2 monoclinic (insulating) phases of VO2 employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO2 , and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO2 : undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M2 phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M1 phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M1 phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.

  14. Metal-Insulator Transition in VO_{2}: A DFT+DMFT Perspective.

    PubMed

    Brito, W H; Aguiar, M C O; Haule, K; Kotliar, G

    2016-07-29

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M_{1} and M_{2} monoclinic (insulating) phases of VO_{2} employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO_{2}, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO_{2}: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M_{2} phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M_{1} phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M_{1} phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments. PMID:27517782

  15. Tunable Anderson metal-insulator transition in quantum spin-Hall insulators

    NASA Astrophysics Data System (ADS)

    Chen, Chui-Zhen; Liu, Haiwen; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X. C.

    2015-06-01

    We numerically study disorder effects in the Bernevig-Hughes-Zhang (BHZ) model, and we find that the Anderson transition of a quantum spin-Hall insulator (QSHI) is determined by model parameters. The BHZ Hamiltonian is equivalent to two decoupled spin blocks that belong to the unitary class. In contrast to the common belief that a two-dimensional unitary system scales to an insulator except at certain critical points, we find, through calculations scaling properties of the localization length, level statistics, and participation ratio, that a possible exotic metallic phase emerges between the QSHI and normal insulator phases in the InAs/GaSb-type BHZ model. On the other hand, direct transition from a QSHI to a normal insulator is found in the HgTe/CdTe-type BHZ model. Furthermore, we show that the metallic phase originates from the Berry phase and can survive both inside and outside the gap.

  16. Unusual M2-mediated metal-insulator transition in epitaxial VO2 thin films on GaN substrates

    NASA Astrophysics Data System (ADS)

    Yang, Hyoung Woo; Inn Sohn, Jung; Yang, Jae Hoon; Jang, Jae Eun; Cha, Seung Nam; Kim, Jongmin; Kang, Dae Joon

    2015-01-01

    We report on the epitaxial growth of vanadium dioxide (\\text{VO}2) thin films on (0001) GaN substrates using a radio frequency magnetron sputtering method and discuss their unusual M2-mediated metal-insulator transition (MIT) properties. We found that large lattice misfits between the \\text{VO}2 film and the GaN substrate could favor the stabilization of the intermediate insulating \\text{M}2 phase, which is known to be observed only in either doped or uniaxially strained samples. We demonstrated that the MIT in \\text{VO}2 films on GaN substrates could be mediated via a monoclinic \\text{M}2 phase during the transition from a monoclinic \\text{M}1 to a rutile R phase. This was confirmed by temperature-dependent Raman studies that exhibited both an evident upshift of a high-frequency phonon mode (ω\\text{V-O}) from 618 \\text{cm}-1 (\\text{M}1) to 645 \\text{cm}-1 (\\text{M}2) and a distinct peak splitting of a low-frequency phonon mode (ω\\text{V-V}) at 221 \\text{cm}-1 (\\text{M}2) for increasing temperatures. Moreover, a resistance change of four orders of magnitude was observed for \\text{VO}2 thin films on GaN substrates, being indicative of the high quality of \\text{VO}2 thin films. This study may offer great opportunities not only to improve the understanding of M2-mediated MIT behavior in \\text{VO}2 thin films, but also to realize novel electronic and optoelectronic devices.

  17. Plasmonic effects on the laser-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; MacQuarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconducting to metallic phase transition that can be induced thermally, optically, or electrically. When switched to the high-temperature (T > 68°C) metallic phase, the greatest contrast in the optical properties occurs at wavelengths in the near-to-mid-infrared and beyond. In the visible to near-infrared, however, upon switching for wavelengths between ~500-1000 nm, VO2 transmits more light in the metallic phase. In this paper, we report studies of the effect of near-IR irradiation (785 nm) on lithographically prepared arrays of gold nanoparticles (NPs) covered with a thin film of VO2 and find that the presence of the NPs substantially lowers the laser threshold for low-power induction of the phase transition. Hybrid Au::VO2 structures were created by coating lithographically prepared arrays of gold nanoparticles (NPs) (diameters 140 and 200 nm, array spacing 450 nm) with 60 nm thick films of VO2 by pulsed laser deposition. Due to resonant absorption of the Au particle-plasmon resonance (PPR) at 785 nm, a temperature-dependent shift in the PPR can be generated by switching the VO2 from one phase to another. We have measured the switching behavior of VO2 and Au::VO2 structures using shuttered CW laser irradiation in order to study both optical and thermal mechanisms of the phase transition. Transient absorption measurements using a shuttered 785 nm pump laser corresponding to the PPR resonance of the Au NPs and 1550 nm CW probe show that the presence of the Au NPs lowers the threshold laser power required to induce the phase transition.

  18. Universal role of quantum uncertainty in Anderson metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Cheng, W. W.; Zhang, Z. J.; Gong, L. Y.; Zhao, S. M.

    2016-07-01

    We explore quantum uncertainty, based on Wigner-Yanase skew information, in various one-dimensional single-electron wave functions. For the power-law function and eigenfunctions in the Aubry-André model, the electronic localization properties are well-defined. For them, we find that quantum uncertainty is relatively small and large for delocalized and localized states, respectively. And around the transition points, the first-order derivative of the quantum uncertainty exhibits singular behavior. All these characters can be used as signatures of the transition from a delocalized phase to a localized one. With this criterion, we also study the quantum uncertainty in one-dimensional disorder system with long-range correlated potential. The results show that the first-order derivative of spectrum-averaged quantum uncertainty is minimal at a certain correlation exponent αm for a finite system, and has perfect finite-size scaling behaviors around αm. By extrapolating αm, the threshold value αc ≃ 1.56 ± 0.02 is obtained for the infinite system. Thus we give another perspective and propose a consistent interpretation for the discrepancies about localization property in the long-range correlated potential model. These results suggest that the quantum uncertainty can provide us with a new physical intuition to the localization transition in these models.

  19. Metal-Insulator Transition Associated with [0110] Charge Ordering in (EDO-TTF)_2X

    NASA Astrophysics Data System (ADS)

    Drozdova, O.; Tanner, D. B.; Yakushi, K.; Ota, A.; Yamochi, H.; Saito, G.

    2002-03-01

    Optical (polarized infrared-visible reflectance and Raman) spectra of (EDO-TTF)_2X (X= PF_6, T_MI= 280 K; AsF_6, T_MI= 268 K) have been measured at temperatures above and below T_MI. From the frequencies of three charge-sensitive C=C stretching modes of EDO-TTF, the molecular charge was estimated as uniform +0.5 split below T_MI to (0, +1). In the electronic spectra along the stack, the main conductivity peak vanishes and instead, two charge transfer bands CT1 (4500 cm-1) and CT2 (11150 cm-1) appear corresponding to D^0D^+...D^+D^0 and D^+D^+...D^2+D^0 processes, respectively. For the first time, the electron-molecular vibration (EMV) coupling between two C=C modes of D^+ and CT2 was observed in the polarized Raman spectra. The optical data point out the importance of the EMV coupling in the formation of the [0110] charge-ordering pattern.

  20. Disproportionation, Metal-Insulator Transition, and Critical Interaction Strength in Na1/2CoO2

    NASA Astrophysics Data System (ADS)

    Kunes, Jan

    2006-03-01

    Spontaneous breaking of symmetry is one of the key concepts of solid state physics related to phase transitions. Charge/spin density wave, or charge/spin ordering if the propagation vector is commensurate, are notorious examples of broken symmetry. The charge disproportionation in Na0.5CoO2 is the main theme of the present work. The results of LDA+U calculations will be presented, exhibiting a charge disproportionation transition at U 3eV. NaxCoO2 attracted considerable attention mainly due to superconductivity of its hydrated form Na0.3CoO2.1.3H2O [1]. Besides the superconductivity NaxCoO2 exhibits several intriguing properties throughout its phase diagram, such crossover from Pauli-like to Curie-Weiss susceptibility at x=0.5, spin-density wave around x=0.7 or several phase transitions for x=0.5 including metal-insulator transition, charge ordering and magnetic ordering [2]. The NaxCoO2 lattice consists of triangular CoO2 layers separated by Na layer. The mobility of Na ions and fractional occupation of Na sublattice provides an additional complication. Using LDA+U functional within FPLO [3] bandstructure method we have performed series of supercell calculations allowing for breaking of the symmetry between different Co sites. We have found that for large enough, but physically realistic, values of the on-site Coulomb interaction U the Co sublattice disproportionates into sites with formal valencies Co^4+ and Co^3+. We have found that at the same time a gap opens in the excitation spectrum. Details of the bandstructure across the transition as well as the driving forces of the transition in the LDA+U mean field picture will be discussed. [1] K. Takada et al., Nature (London) 422, 53 (2003).[2] M. L. Foo et al., Phys. Rev. Lett. 92, 247001 (2004).[3] K. Koepernik and H. Eschrig, Phys. Rev. B 59, 1743 (1999).

  1. Covalency and the metal-insulator transition in titanate and vanadate perovskites

    NASA Astrophysics Data System (ADS)

    Dang, Hung T.; Millis, Andrew J.; Marianetti, Chris A.

    2014-04-01

    A combination of density functional and dynamical mean-field theory is applied to the perovskites SrVO3, LaTiO3, and LaVO3. We show that DFT + DMFT in conjunction with the standard fully localized-limit (FLL) double-counting predicts that LaTiO3 and LaVO3 are metals even though experimentally they are correlation-driven ("Mott") insulators. In addition, the FLL double counting implies a splitting between oxygen p and transition metal d levels, which differs from experiment. Introducing into the theory an ad hoc double counting correction, which reproduces the experimentally measured insulating gap leads also to a p-d splitting consistent with experiment if the on-site interaction U is chosen in a relatively narrow range (˜6±1 eV). The results indicate that these early transition metal oxides will serve as critical test for the formulation of a general ab initio theory of correlated electron metals.

  2. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    NASA Astrophysics Data System (ADS)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  3. Optically induced metal-insulator transition in gold::vanadium dioxide hybrid structures

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Kaye, Anthony; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semi-conducting to metallic phase transition that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameters up to 200 nm with 60 nm thick films of VO2 via pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a chopped 780 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Additionally, pump-probe measurements were conducted on the structures using a Ti:sapphire oscillator with 100-fs pulses. Results show that the presence of Au NPs lowers the threshold laser power required to induce the phase transition. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  4. Exotic topological states near a quantum metal-insulator transition in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming

    Pyrochlore iridates have attracted great interest as prime candidates that may host topologically nontrivial states, spin ice ordering and quantum spin liquid states, in particular through the interplay between different degrees of freedom, such as local moments and mobile electrons. Based on our extensive study using our high quality single crystals, we will discuss such examples, i.e. chiral spin liquid in a quadratic band touching state, Weyl semimetallic state and chiral domain wall transport nearby a quantum insulator-semimetal transition in pyrochlore iridates. This work is based on the collaboration with Nakatsuji Satoru, Kohama Yoshimitsu, Tomita Takahiro, Kindo Koichi, Jun J. Ishikawa, Balents Leon, Ishizuka Hiroaki, Timothy H. Hsieh. ZM. Tian was supported by JSPS Postdoctoral Fellowship (No.P1402).

  5. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    PubMed

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-01

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). PMID:26588400

  6. Volume-based considerations for the metal-insulator transition of CMR oxides

    SciTech Connect

    Neumeier, J.J.; Hundley, M.F.; Cornelius, A.L.; Andres, K.

    1998-03-01

    The sensitivity of {rho} [electrical resistivity] to changes in volume which occur through: (1) applied pressure, (2) variations in temperature, and (3) phase transitions, is evaluated for some selected CMR oxides. It is argued that the changes in volume associated with phase changes are large enough to produce self pressures in the range of 0.18 to 0.45 GPa. The extreme sensitivity of the electrical resistivity to pressure indicates that these self pressures are responsible for large features in the electrical resistivity and are an important component for occurrence the metallicity below {Tc}. It is suggested that this is related to a strong volume dependence of the electron phonon coupling in the CMR oxides.

  7. Structurally-driven metal-insulator transition in Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} (0{<=}x<0.14): A single crystal X-ray diffraction study

    SciTech Connect

    Qi, T.F.; Ge, M.; Korneta, O.B.; Parkin, S.; De Long, L.E.; Cao, G.

    2011-04-15

    Correlation between structure and transport properties are investigated in high-quality single-crystals of Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} with 0metal-insulator (MI) transition at 357 K. Upon chromium doping on the ruthenium site, the metal-insulator transition temperature (T{sub MI}) was drastically reduced, and is related to the competition between structural changes that occur upon Cr doping and with decreasing temperature. A strong suppression of structural distortions with increasing Cr substitution was identified. No clear T{sub MI} can be observed when x>13.5% and the system behaves as an insulator. Such a large, sharp metal-insulator transition and tuneable transition temperature may have potential applications in electronic devices. -- Graphical abstract: The metal-insulator transition temperature (T{sub MI}) was drastically reduced by Cr doping, and is closely related to the distortion of structure. Display Omitted Research highlights: {yields} The metal-insulator transition temperature (T{sub MI}) was drastically reduced by doping Cr into Ca{sub 2}RuO{sub 4} single crystal. {yields} Detailed single crystal structural analysis provided important insight into this structurally-driven metal-insulator transition. {yields} Negative Volume Thermal Expansion (NVTE) was observed with increasing temperature.

  8. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    NASA Astrophysics Data System (ADS)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  9. Directing colloidal assembly and a metal-insulator transition using quenched-disordered polymeric networks

    NASA Astrophysics Data System (ADS)

    Phan, Anh; Jadrich, Ryan; Schweizer, Kenneth

    2015-03-01

    Replica integral equation and effective medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly and realize equilibrium states of high electrical conductivity at low physical volume fractions. This is achieved by employing variable mesh size networks of rigid rod or semiflexible polymers as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low dimensional network and fluctuation-driven colloid clustering in the pore spaces, distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. Polymer conformational fluctuations are found to significantly modify the physical adsorption process and hence the ability of colloids to organize along the filamentary network strands. Qualitatively new physical behavior can emerge as the pore size approaches the colloid diameter, reflecting strong frustrating constraints of the template on colloidal assembly.

  10. Heavy holes localization, metal-insulator transition and superconductivity of HTSC oxides

    SciTech Connect

    Golovashkin, A.I.; Anshukova, N.V.; Ivanova, L.I.; Maljuchkov, O.T.; Rusakov, A.P.

    1996-12-31

    On the basis of experimental studies of specific heat, magnetic properties and thermal expansion it was shown that dielectric-metal phase transition was the consequence of delocalization of heavy holes located on metal-apical oxygen bonds in the high-temperature superconducting (HTSC) oxide systems. The dielectric gaps in electronic spectrum of the oxide systems appear owing to the charge density waves (CDW) of the ordered arrays of such localized (heavy) holes. The CDW is the microscopic reason of the negative thermal expansion observed in dielectric phases of some HTSC systems. The free carriers introduced in the oxide systems by doping can couple through excitations of these localized holes (local bosons). Such free carriers pairing leads to the high-temperature superconductivity with small coherence length and anomalous (with positive curvature) temperature dependence of H{sub c2}(T). The suggested localized holes on the metal-apical oxygen bonds and local bosons in addition to the usual phonons are the basis for the explanation of the experimental data presented in this report.

  11. Probing the Metal-Insulator Transition in BaTiO3 by Electrostatic Doping

    NASA Astrophysics Data System (ADS)

    Raghavan, Santosh; Zhang, Jack Y.; Shoron, Omor F.; Stemmer, Susanne

    2016-07-01

    The metal-to-insulator transition in BaTiO3 is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO3/BaTiO3/SrTiO3 heterostructures are doped with a constant sheet carrier density of 3 ×1014 cm-2 that is introduced via the polar SmTiO3/BaTiO3 interface. Below a critical BaTiO3 thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO3/SrTiO3 interfaces. Above this thickness, data indicate that the BaTiO3 layer becomes ferroelectric. The BaTiO3 lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ˜125 K , and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

  12. Tunneling Spectroscopy of Amorphous Magnetic Rare Earth-Si Alloys near the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Xiong, P.; Zink, B. L.; Tran, M. Q.; Gebala, A. E.; Wilcox, E. M.; Hellman, F.; Dynes, R. C.

    1997-03-01

    Amorphous dilute magnetic semiconductors exhibit striking differences in the electrical and magneto-transport behavior from their crystalline or nonmagnetic analogs.(F. Hellman et al., Phys. Rev. Lett. 77, 4652 (1996).) Magnetic impurities cause a large suppression of conductivity below 50 K in a-Si_xGd_1-x and a-Si_xTb_1-x relative to the nonmagnetic a-Si_xY_1-x (x ~ 0.85-0.9). Application of a magnetic field increases the conductivity by orders of magnitude. We have fabricated good quality tunnel junctions on a-Si:Gd and the nonmagnetic a-Si:Y to probe the electronic density of states in these two systems. We present the results of the tunneling spectroscopy and its magnetic field dependence for a series of the two alloys at different compositions. We will discuss the correlation between the tunneling spectra and the transport properties and its implications on the possible origin of the magnetic field tuned insulator-metal transition in a-Si:Gd. Research Supported by ONR Grant No. N000149151320 and NSF Grant No. DMR-9208599.

  13. Low-power laser induced metal-insulator transition in gold::vanadium dioxide nanoarrays

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F.

    2010-10-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconductor-to-metal transition (SMT) that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameter 140 nm with a 60 nm thick film of VO2 by pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a mechanically shuttered 785 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Results show that the presence of Au NPs significantly lowers the threshold laser power required to induce the SMT. Measurements on arrays of different grating constants (350 nm and 500 nm) support the hypothesis that the particles are acting as ``nano-radiators'' that absorb and redeposit thermal energy by scattering light back into the film. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  14. Metal-insulator transition in nanostructured SrTiO3/LaAlO3

    NASA Astrophysics Data System (ADS)

    Zhuang, Houlong; Cooper, Valentino R.; Ganesh, P.; Xu, Haixuan; Kent, P. R. C.

    2015-03-01

    It is well known that an insulator-to-metal transition occurs at SrTiO3/LaAlO3 epitaxial heterostructures when the number of LaAlO3 layers reaches a critical value of four. With first-principles calculations, we show that instead of requiring the threshold number of layers to trigger metallicity, the so-called 1+2 overlayer heterostructure also exhibits metallic states. Interestingly, we demonstrate that these metallic states form a two-dimensional electron gas at the overlayer heterostructure. We understand that these fascinating phenomena originate from a modified ``polar catastrophe'' model, where the overlayer heterostructure accumulates an electrostatic potential more rapidly than regular heterostructures, leading to the reduction of number of LAO layers. Using this model, we further show that the thinner 1+1 overlayer heterostructure exhibits a similar 2DEG. Our work provides a novel approach of inducing 2DEGs in oxide heterostructures, which are beneficial for modern electronics applications. HZ, PRCK, VRC and PG were sponsored by the LDRD at ORNL for the U.S. DOE and HX by the University of Tennessee JDRD and UT/ORNL-JIAM programs.

  15. The Unusual Metal-Insulator Transition in Ca(2-x)Sr(x)RuO(4)

    NASA Astrophysics Data System (ADS)

    Rice, T. Maurice

    2002-03-01

    The isoelectronic compounds Ca_2-xSr_xRuO4 offer a rare opportunity to follow the evolution of the electronic structure from a multiband metal, Sr_2RuO_4, to a Mott insulator, Ca_2RuO_4. The evolution is not at all monotonic but proceeds through a series of intermediate regions with unexpected behavior [1]. Sr_2RuO4 is a good metal with the 4 electrons in the t_2g-subshell of the Ru^4+-ions distributed equally in 3 bands. These in turn separate into a d_xy-band which disperses in both directions in the RuO_2-planes and d_xz/d_yz-bands dispersing only in one direction. The hybridization between these components occurs only through very weak interplanar processes. Substituting Ca for Sr leads to band narrowing through a rotation of the RuO_4-octahedra. A series of electronic structure calculations [2] using the LDA+DMFT method to incorporate strong correlations, predict an unusual state with 3 electrons localizing in the narrower d_xz/d_yz bands while the last electron remains itinerant in the broader d_xy-band. The observation of a strongly enhanced and temperature dependent spin susceptibility in the metallic state at x=0.5 is attributed to the S=1/2 local moments of the localized hole in the d_xz/d_yz-orbitals. The superexchange interaction between the local moments is strongly dependent on the specific orbital occupation and so glassy behavior in the orbital ordering can account for the glassy behavior observed in the susceptibility in the range 0.2 < x < 0.5. The final transition to a Mott insulator at x < 0.2 is driven by a compression of the RuO_4-octahedra and a switch to an electronic configuration with a filled d_xy-orbital and 2 electrons in the d_xz/d_yz orbitals which has a S=1 local moment expected for a Ru^4+-ion. [1] S. Nakatsuji and Y. Maeno, Phys. Rev. Lett. 84, 2666 (2000). [2] V.I. Anisimov, I.A. Nekrasov, D.E. Kondakov, T.M. Rice, and M. Sigrist, cond-mat0107095 and Eur. Phys. Jour. B (in press).

  16. Metal-Insulator Transitions.

    ERIC Educational Resources Information Center

    Mott, Nevill

    1978-01-01

    Explains how changes in temperature, pressure, magnetic field or alloy composition can affect the electronic band structure of substances, leading in some cases to dramatic changes in conductivity. (GA)

  17. Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy.

    PubMed

    Zhang, Chenxi; Kc, Santosh; Nie, Yifan; Liang, Chaoping; Vandenberghe, William G; Longo, Roberto C; Zheng, Yongping; Kong, Fantai; Hong, Suklyun; Wallace, Robert M; Cho, Kyeongjae

    2016-08-23

    Metal-insulator transitions in low-dimensional materials under ambient conditions are rare and worth pursuing due to their intriguing physics and rich device applications. Monolayer MoTe2 and WTe2 are distinguished from other TMDs by the existence of an exceptional semimetallic distorted octahedral structure (T') with a quite small energy difference from the semiconducting H phase. In the process of transition metal alloying, an equal stability point of the H and the T' phase is observed in the formation energy diagram of monolayer WxMo1-xTe2. This thermodynamically driven phase transition enables a controlled synthesis of the desired phase (H or T') of monolayer WxMo1-xTe2 using a growth method such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Furthermore, charge mediation, as a more feasible method, is found to make the T' phase more stable than the H phase and induce a phase transition from the H phase (semiconducting) to the T' phase (semimetallic) in monolayer WxMo1-xTe2 alloy. This suggests that a dynamic metal-insulator phase transition can be induced, which can be exploited for rich phase transition applications in two-dimensional nanoelectronics. PMID:27415610

  18. First-principles study of Sr2Ir1-xRhxO4: charge transfer, spin-orbit coupling change, and the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Sim, Jae-Hoon; Kim, Heung-Sik; Han, Myung Joon

    2015-03-01

    Using first-principles density functional theory (DFT) calculations, we investigated the electronic structure of Rh-doped iridate, Sr2Ir1-xRhxO4 for which the doping (x) dependent metal-insulator transition (MIT) has been reported experimentally and the controversial discussion developed regarding the origin of this transition. Our DFT+U calculation shows that the value of < L . S > remains largely intact over the entire doping range considered here (x = 0 . 0 , 0 . 125 , 0 . 25 , 0 . 50 , 0 . 75 , and 1 . 0) in good agreement with the branching ratio measured by x-ray absorption spectroscopy. Also contrary to a previous picture to explain MIT based on the charge transfer between the transition-metal sites, our calculation clearly shows that those sites remain basically isoelectronic while the impurity bands of predominantly rhodium character are introduced near the Fermi level. As the doping increases, this impurity band overlaps with lower Hubbard band of iridium, leading to metal-insulator transition. The results will be discussed with comparison to the case of Ru doping. Computational resources were suported by The National Institute of Supercomputing and Networking/Korea Institute of Science and Technology Information with supercomputing resources including technical spport (Grant No. KSC-2013-C2-23).

  19. Metal--Insulator Transition in Bi{sub 2}Sr{sub 2}Cu{sub 1}O{sub 6+d}(Bi-2201) Thin Films

    SciTech Connect

    Pop, Aurel V.

    2009-05-22

    We have studied the influence of disorder induced by oxygen on the normal state resistivity of under doped Bi{sub 2}Sr{sub 2}Cu{sub 1}O{sub 6+d}(Bi-2201) thin films, deposited in situ onto heated SrTiO{sub 3}(100) substrates by using DC magnetron sputtering for an off-stoichiometric target. The compositions and structural characterization for the deposited films were carried by (EDX), (XPS) and X-ray diffraction measurements. The effect of partial oxygen pressure in the sputtering gas on the metal-insulator transition are presented.

  20. Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

    2016-03-01

    This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

  1. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  2. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-08-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or `Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  3. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  4. Magnetic field induced lattice effects in a quasi-two-dimensional organic conductor close to the Mott metal-insulator transition

    NASA Astrophysics Data System (ADS)

    de Souza, Mariano; Brühl, Andreas; Strack, Christian; Schweitzer, Dieter; Lang, Michael

    2012-08-01

    We present ultra-high-resolution dilatometric studies in magnetic fields on a quasi-two-dimensional organic conductor κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br, which is located close to the Mott metal-insulator (MI) transition. The obtained thermal expansion coefficient, α(T), reveals two remarkable features: (i) the Mott MI transition temperature TMI=(13.6±0.6) K is insensitive to fields up to 10 T, the highest applied field; (ii) for fields along the interlayer b axis, a magnetic field induced (FI) phase transition at TFI=(9.5±0.5) K is observed above a threshold field Hc˜1 T, indicative of a spin reorientation with strong magnetoelastic coupling.

  5. Magnetic, electrical, and structural studies on the metal-insulator transition in CuIr2S4-xSex (0⩽x⩽4)

    NASA Astrophysics Data System (ADS)

    Somasundaram, P.; Kim, D.; Honig, J. M.; Pekarek, T. M.; Gu, T.; Goldman, A. I.

    1998-06-01

    Magnetic transitions and structural transformations have been investigated in CuIr2S4-xSex (0⩽x⩽4). It is found from magnetic, resistivity, and thermopower studies that the transition temperature decreases as the Se concentration is increased. The change in magnetization occurs over a 10-15 K range at lower Se concentration, while it broadens to 30 K for an Se concentration of x=0.5. Low-temperature studies proved that beyond the composition corresponding to x=0.5 the cubic structure is stabilized. The metal-insulator transition beyond the x=0.5 composition arises from the electronic rather than from the lattice contribution.

  6. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions.

    PubMed

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-14

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases. PMID:27083708

  7. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions

    NASA Astrophysics Data System (ADS)

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-01

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases.

  8. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    NASA Astrophysics Data System (ADS)

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-11-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system.

  9. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    SciTech Connect

    Wangoh, L.; Quackenbush, N. F.; Marley, P. M.; Banerjee, S.; Sallis, S.; Fischer, D. A.; Woicik, J. C.; Piper, L. F. J.

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  10. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  11. In-plane magnetic-field-induced metal-insulator transition in (311)A GaAs two-dimensional hole systems probed by thermopower

    NASA Astrophysics Data System (ADS)

    Faniel, S.; Moldovan, L.; Vlad, A.; Tutuc, E.; Bishop, N.; Melinte, S.; Shayegan, M.; Bayot, V.

    2007-10-01

    We report thermopower measurements in dilute (311)A GaAs two-dimensional holes subjected to an in-plane magnetic field B that drives the system through a metal-insulator transition (MIT). The diffusion thermopower Sd decreases linearly with temperature at low B for both low-mobility [011¯] and high-mobility [2¯33] directions, as expected for metallic systems. At high B , in the insulating phase, Sd changes sign along [011¯] , while Sd drops to zero along [2¯33] . This behavior suggests that the system does not undergo any ground-state modification but, rather, that the apparent MIT transition is accompanied by a dramatic change in the dominant scattering mechanisms.

  12. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

    PubMed

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Tok, Eng Soon; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  13. Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition

    SciTech Connect

    Okimura, Kunio; Mian, Md.Suruz

    2012-09-15

    The authors achieved oriented growth of vanadium dioxide (VO{sub 2}) films on CoCrTa metal template grown on an Si substrate. Low-temperature ({approx}250 Degree-Sign C) deposition of VO{sub 2} films using inductively coupled-plasma-assisted sputtering technique realized an abrupt interface between VO{sub 2} and CoCrTa layers, suppressing the oxidation and diffusion of metal components. The films revealed a metal-insulator transition with resistance change of over 2 orders of magnitude. The CoCrTa film, in which Co hexagonal crystalline grains with c-axis orientation were surrounded by segregated Cr and Ta, serves for the oriented growth of VO{sub 2} crystalline film, enabling higher orders of transition in resistance and low voltage switching, even for the vertical (out-of-plane) direction.

  14. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO3 thin films grown by polymer-assisted deposition

    NASA Astrophysics Data System (ADS)

    Yao, Dan; Shi, Lei; Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-01

    The epitaxial NdNi1-xCoxO3 (0 ≤ x ≤ 0.10) thin films on (001) LaAlO3 and (001) SrTiO3 substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO3 thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (TMI) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  15. Testing the universality of the many-body metal-insulator transition by time evolution of a disordered one-dimensional ultracold fermionic gas

    NASA Astrophysics Data System (ADS)

    Tezuka, Masaki; García-García, Antonio M.

    2012-03-01

    It is now possible to study experimentally the combined effect of disorder and interactions in cold atom physics. Motivated by these developments we investigate the dynamics around the metal-insulator transition (MIT) in a one-dimensional Fermi gas with short-range interactions in a quasiperiodic potential by the time-dependent density-matrix renormalization group technique. By tuning disorder and interactions we study the MIT from the weakly to the strongly interacting limit. The MIT is not universal as time evolution, well described by a process of anomalous diffusion, depends qualitatively on the interaction strength. By using scaling ideas we relate the parameter that controls the diffusion process with the critical exponent that describes the divergence of the localization length. In the limit of strong interactions theoretical arguments suggest that the motion at the MIT tends to ballistic and critical exponents approach mean-field predictions.

  16. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

    SciTech Connect

    Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

    2014-02-24

    Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.

  17. Cu(Ir1 − xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    PubMed Central

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-01-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 − xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states. PMID:24518384

  18. Disorder Driven Metal-Insulator Transition in BaPb1-xBixO3 and Inference of Disorder-Free Critical Temperature

    NASA Astrophysics Data System (ADS)

    Luna, Katherine; Giraldo-Gallo, Paula; Geballe, Theodore; Fisher, Ian; Beasley, Malcolm

    2014-10-01

    We performed point-contact spectroscopy tunneling measurements on single crystal BaPb1-xBixO3 for 0≤x ≤0.28 at temperatures T =2-40 K and find a suppression in the density of states at low bias voltages that is characteristic of disordered metals. Both the correlation gap and the zero-temperature conductivity are zero at a critical concentration xc=0.30. Not only does this suggests that a disorder driven metal-insulator transition occurs before the onset of the charge disproportionated charge density wave insulator, but we also explore whether a scaling theory is applicable. In addition, we estimate the disorder-free critical temperature and compare these results to Ba1-xKxBiO3.

  19. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    SciTech Connect

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  20. Metal-insulator transition characteristics of vanadium dioxide thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture

    NASA Astrophysics Data System (ADS)

    Bharathi, R.; Naorem, Rameshwari; Umarji, A. M.

    2015-08-01

    We report the synthesis of high quality vanadium dioxide (VO2) thin films by a novel spray pyrolysis technique, namely ultrasonic nebulized spray pyrolysis of aqueous combustion mixture (UNSPACM). This simple and cost effective two step process involves synthesis of a V2O5 film on an LaAlO3 substrate followed by a controlled reduction to form single phase VO2. The formation of M1 phase (P21/c) is confirmed by Raman spectroscopic studies. A thermally activated metal-insulator transition (MIT) was observed at 61 ^\\circ C, where the resistivity changes by four orders of magnitude. Activation energies for the low conduction phase and the high conduction phase were obtained from temperature variable resistance measurements. The infrared spectra also show a dramatic change in reflectance from 13% to over 90% in the wavelength range of 7-15 μ m. This indicates the suitability of the films for optical switching applications at infrared frequencies.

  1. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

    PubMed

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  2. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    NASA Astrophysics Data System (ADS)

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-06-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.

  3. Cu(Ir1 - xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-02-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 - xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

  4. Sr{sub 2}CrOsO{sub 6}: End point of a spin-polarized metal-insulator transition by 5d band filling

    SciTech Connect

    Krockenberger, Y.; Mogare, K.; Jansen, M.; Reehuis, M.; Tovar, M.; Vaitheeswaran, G.; Kanchana, V.; Bultmark, F.; Delin, A.; Wilhelm, F.; Rogalev, A.; Winkler, A.; Alff, L.

    2007-01-01

    In the search for new spintronic materials with high spin polarization at room temperature, we have synthesized an osmium-based double perovskite with a Curie temperature of 725 K. Our combined experimental results confirm the existence of a sizable induced magnetic moment at the Os site, supported by band-structure calculations, in agreement with a proposed kinetic-energy-driven mechanism of ferrimagnetism in these compounds. The intriguing property of Sr{sub 2}CrOsO{sub 6} is that it is at the end point of a metal-insulator transition due to 5d band filling and at the same time ferrimagnetism and high-spin polarization are preserved.

  5. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    PubMed Central

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  6. Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

    SciTech Connect

    L Whittaker; T Wu; C Patridge; S Ganapathy; S Banerjee

    2011-12-31

    The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation of substitutional tungsten dopants but the impact on the former transition seems far more prominent. In general, the depression in the critical temperatures upon tungsten doping far exceeds corresponding values for bulk W{sub x}V{sub 1-x}O{sub 2} of the same composition. Notably, the depression in phase transition temperature saturates at a relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants in these structures. The marked deviations from bulk behavior are rationalized in terms of a percolative model of the phase transition taking into account the nucleation of locally tetragonal domains and enhanced carrier delocalization that accompany W{sup 6+} doping in the W{sub x}V{sub 1-x}O{sub 2} nanobelts.

  7. Tunable metal-insulator transition in Nd1-xYxNiO3 (x = 0.3, 0.4) perovskites thin film at near room temperature

    NASA Astrophysics Data System (ADS)

    Shao, Tao; Qi, Zeming; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Wang, Yu; Zhang, Guobin; Liu, Miao

    2015-07-01

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd1-XYXNiO3 (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340-360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  8. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT. PMID:27253750

  9. Phonon mode spectroscopy, electron-phonon coupling, and the metal-insulator transition in quasi-one-dimensional M2Mo6Se6

    NASA Astrophysics Data System (ADS)

    Petrović, A. P.; Lortz, R.; Santi, G.; Decroux, M.; Monnard, H.; Fischer, Ø.; Boeri, L.; Andersen, O. K.; Kortus, J.; Salloum, D.; Gougeon, P.; Potel, M.

    2010-12-01

    We present electronic-structure calculations, electrical resistivity data, and the first specific-heat measurements in the normal and superconducting states of quasi-one-dimensional M2Mo6Se6 (M=Tl,In,Rb) . Rb2Mo6Se6 undergoes a metal-insulator transition at ˜170K : electronic-structure calculations indicate that this is likely to be driven by the formation of a dynamical charge-density wave. However, Tl2Mo6Se6 and In2Mo6Se6 remain metallic down to low temperature, with superconducting transitions at Tc=4.2K and 2.85 K, respectively. The absence of any metal-insulator transition in these materials is due to a larger in-plane bandwidth, leading to increased interchain hopping which suppresses the density wave instability. Electronic heat-capacity data for the superconducting compounds reveal an exceptionally low density of states DEF=0.055 states eV-1atom-1 , with BCS fits showing 2Δ/kBTc≥5 for Tl2Mo6Se6 and 3.5 for In2Mo6Se6 . Modeling the lattice specific heat with a set of Einstein modes, we obtain the approximate phonon density of states F(ω) . Deconvolving the resistivity for the two superconductors then yields their electron-phonon transport coupling function αtr2F(ω) . In Tl2Mo6Se6 and In2Mo6Se6 , F(ω) is dominated by an optical “guest ion” mode at ˜5meV and a set of acoustic modes from ˜10 to 30 meV. Rb2Mo6Se6 exhibits a similar spectrum; however, the optical phonon has a lower intensity and is shifted to ˜8meV . Electrons in Tl2Mo6Se6 couple strongly to both sets of modes, whereas In2Mo6Se6 only displays significant coupling in the 10-18 meV range. Although pairing is clearly not mediated by the guest ion phonon, we believe it has a beneficial effect on superconductivity in Tl2Mo6Se6 , given its extraordinarily large coupling strength and higher Tc compared to In2Mo6Se6 .

  10. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    SciTech Connect

    Park, Tae-Eon; Jang, Chaun E-mail: presto@kist.re.kr; Suh, Joonki; Wu, Junqiao; Seo, Dongjea; Park, Joonsuk; Lin, Der-Yuh; Huang, Ying-Sheng; Choi, Heon-Jin; Chang, Joonyeon E-mail: presto@kist.re.kr

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  11. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  12. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  13. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  14. Interfacial reaction between metal-insulator transition material NbO2 thin film and wide band gap semiconductor GaN

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Kvit, Alexander; Demkov, Alexander

    Materials that undergo a metal-insulator transition (MIT) are potentially useful for a wide variety of applications including electronic and opto-electronic switches, memristors, sensors, and coatings. In most such materials, the MIT is driven by temperature. In one such material, NbO2, the MIT mechanism is primarily of the Peierls-type, in which the dimerization of the Nb atoms without electron correlation causes the transition from metallic to semiconducting. We describe our initial work at combining NbO2 and GaN in epitaxial form, which could be potentially useful in resistive switching devices operating at very high temperatures. We grow NbO2 films on GaN(0001)/Si(111) substrates using reactive molecular beam epitaxy from a metal evaporation source and molecular oxygen. X-ray diffraction shows that the films are found to grow with a single out of plane orientation but with three symmetry-related orientation domains in the plane. In situ x-ray photoelectron spectroscopy confirms that the phase pure NbO2 is formed but that a chemical reaction occurs between the GaN and NbO2 during the growth forming a polycrystalline interfacial layer. We perform STEM-EELS analysis of the film and the interface to further elucidate their chemical and structural properties.

  15. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

    PubMed Central

    Lee, Hong Sub; Choi, Sun Gyu; Park, Hyung-Ho; Rozenberg, M. J.

    2013-01-01

    Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr0.7Ca0.3MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

  16. Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation

    NASA Astrophysics Data System (ADS)

    Crunteanu, Aurelian; Fabert, Marc; Cornette, Julie; Colas, Maggy; Orlianges, Jean-Christophe; Bessaudou, Annie; Cosset, Françoise

    2014-03-01

    We present the vanadium dioxide (VO2) thin films deposition using e-beam evaporation of a vanadium target under oxygen atmosphere on different substrates (sapphire, Si, SiO2/Si…) and we focus on their electrical and optical properties variations as the material undergoes a metal-insulator transition under thermal and electrical stimuli. The phase transition induces extremely abrupt changes in the electronic and optical properties of the material: the electrical resistivity increases up to 5 orders of magnitude while the optical properties (transmission, reflection, refractive index) are drastically modified. We present the integration of these films in simple planar optical devices and we demonstrate electrical-activated optical modulators for visible-infrared signals with high discrimination between the two states. We will highlight a peculiar behavior of the VO2 material in the infrared and far infrared regions (2- 20 μm), namely its anomalous emissivity change under thermal- end electrical activation (negative differential emittance phenomenon) with potential applications in active coatings for thermal regulation, optical limiting or camouflage coatings.

  17. Charge disproportionation without charge transfer in the rare-earth-element nickelates as a possible mechanism for the metal-insulator transition.

    PubMed

    Johnston, Steve; Mukherjee, Anamitra; Elfimov, Ilya; Berciu, Mona; Sawatzky, George A

    2014-03-14

    We study a model for the metal-insulator (M-I) transition in the rare-earth-element nickelates RNiO3, based upon a negative charge transfer energy and coupling to a rocksaltlike lattice distortion of the NiO6 octahedra. Using exact diagonalization and the Hartree-Fock approximation we demonstrate that electrons couple strongly to these distortions. For small distortions the system is metallic, with a ground state of predominantly d8L character, where L_ denotes a ligand hole. For sufficiently large distortions (δdNi-O∼0.05-0.10  Å), however, a gap opens at the Fermi energy as the system enters a periodically distorted state alternating along the three crystallographic axes, with (d8L_2)S=0(d8)S=1 character, where S is the total spin. Thus the M-I transition may be viewed as being driven by an internal volume "collapse" where the NiO6 octahedra with two ligand holes shrink around their central Ni, while the remaining octahedra expand accordingly, resulting in the (1/2, 1/2, 1/2) superstructure observed in x-ray diffraction in the insulating phase. This insulating state is an example of charge ordering achieved without any actual movement of the charge. PMID:24679313

  18. Chemical vapour deposition: Transition metal carbides go 2D

    NASA Astrophysics Data System (ADS)

    Gogotsi, Yury

    2015-11-01

    The unique properties of 2D materials, such as graphene or transition metal dichalcogenides, have been attracting much attention in the past decade. Now, metallically conductive and even superconducting transition metal carbides are entering the game.

  19. NMR studies of metal-insulator transition in the spinel-type Cu(Ir1-xVx)2S4

    NASA Astrophysics Data System (ADS)

    Niki, H.; Okuda, H.; Okada, Y.; Higa, K.; Oshiro, M.; Fukuyoshi, N.; Mahoe, R.; Yogi, M.; Nakama, T.; Yagasaki, K.; Ebisu, S.; Nagata, S.

    2011-01-01

    In order to investigate the physical properties of a metal-insulator transition (MIT) on Ir rich side in Cu(Ir1-xVx)2S4 from a microscopic point of view, 63Cu NMR measurements for Cu(Ir1-xVx)2S4 (x = 0.00, 0.03 and 0.05) have been carried out from 4.2 to 300 K. The temperature dependences of the line width, Knight shift and spin-lattice relaxation time (T1) have been measured for these samples. A sudden decreases of the 1/T1T and the negative contribution to the Knight shift from the core polarization of Cu conduction electrons for x = 0.00 and 0.03 samples show clearly the existence of the MIT at TMI = 226 and 175 K, respectively, being attributed to the opening of a band gap below TMI. However, the temperature dependences of the 1/T1T and the Knight shift for x = 0.05 sample change continuously as the band gap is remarkably suppressed below TMI. The density of states at Fermi level in the insulating phase is reduced to about 20 % of that in the metallic phase.

  20. Correlation-induced metal-insulator transitions in d0 magnetic superlattices based on alkaline-earth monoxides: Insights from ab initio calculations

    NASA Astrophysics Data System (ADS)

    Lu, Yi-Lin; Dong, Shengjie; Zhou, Baozeng; Zhao, Hui; Wu, Ping

    2015-06-01

    Using first-principles density functional theory calculations, we have investigated the electronic structure and magnetic properties of four superlattices (MO)1/(MX)1 (001) (M=Ca and Sr; X=N and C). Our results show that compared with standard GGA approach, the GGA plus effective Ueff scheme can correct electronic structure and magnetic properties in some extent. With enhancing electronic correlation, for (CaO)1/(CaN)1, (SrO)1/(SrN)1, and (SrO)1/(SrC)1, the bands across Fermi level are divided into two parts and the shape of isotropic spherical spin atmosphere becomes anisotropic dumbbell-like with specific orientation, accompanying metal-insulator transitions. For (CaO)1/(CaC)1, the states just smearing with the Fermi level shift to lower energy region below Fermi level, indicating the transformation from a nearly half metal to an actual half metal occurs. The different behavior of (CaO)1/(CaC)1 compared with three other compounds may be caused by the larger ionization energy of calcium than that of strontium and the smaller electronegativity of carbon than that of nitrogen.

  1. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  2. Epitaxial growth of in-plane-dimerized, single phase NbO2 thin films for metal-insulator transition applications

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Hadamek, Tobias; O'Hara, Andy; Demkov, Alexander

    2015-03-01

    NbO2 is a exhibits a metal-insulator transition that may have potential applications in electronic devices. The strong conductivity change in NbO2 occurs along the dimerization direction and for devices utilizing NbO2 as a channel material (in-plane transport) such as transistors, one would like the dimerization direction to be in the plane of the film. The electrical properties of Nb oxides are strongly dependent on the oxidation state of Nb. It is therefore critical to be able to control the oxidation state of Nb during growth. Here, we describe the epitaxial growth of in-plane-dimerized NbO2 using molecular beam epitaxy on a variety of substrates (STO, LSAT, MgO, BTO and GaN), growth temperatures, and oxygen-to-niobium flux ratios. We show that the particular substrate used significantly affects the bulk and surface crystallinity, as well as the degree of oxidation. We also show the evolution of the valence and core level photoemission spectra of Nb oxides as a function of oxygen-to-niobium flux ratio and point out the optimum growth conditions to achieve phase-pure, epitaxial NbO2 films.

  3. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  4. Strain-induced metal-insulator transition in t2 g electron system of perovskite titanate S m0.5C a0.5Ti O3 films

    NASA Astrophysics Data System (ADS)

    Yoshimatsu, K.; Okabe, H.; Oshima, T.; Ueda, S.; Ohtomo, A.

    2016-05-01

    We have demonstrated a strain-induced metal-insulator transition for weak Jahn-Teller effects in a t2 g electron system of S m0.5C a0.5Ti O3 , which has metallic ground states in the bulk. A clear variation of electronic properties in S m0.5C a0.5Ti O3 thin films was investigated as a function of epitaxial stain by changing a substrate and the film thickness. Under strong biaxial tensile strain, metallic behaviors were completely eliminated, as evidenced by the temperature dependence of resistivity. The observed metal-insulator transition was consistent with the behavior of the Ti 3 d density of states at the Fermi level seen in valence band hard x-ray photoemission spectra.

  5. Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2015-07-01

    Insulator-to-metal (MI) phase transition in vanadium dioxide (V O2) thin films with controlled lattice distortion was investigated by thermopower measurements. V O2 epitaxial films with different crystallographic orientations, grown on (0001 ) α -A l2O3 , (11 2 ¯0 ) α -A l2O3 , and (001 ) Ti O2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S ) from ˜200 to 23 μ V K-1 , along with a sharp drop in electrical resistivity (ρ ) , due to the transition from an insulator to a metal. The MI transition temperatures observed both in ρ (Tρ) and S (TS) for the V O2 films systematically decrease with lattice shrinkage in the pseudorutile structure along the c axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset TS, where the insulating phase starts to become metallic, is much lower than the onset Tρ. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in ρ measurements. Consequently, S measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in V O2 .

  6. Metal-insulator transition in AC{sub 60}:RbC{sub 60} and KC{sub 60}

    SciTech Connect

    Khazeni, K.; Crespi, V.H.; Hone, J.; Zettl, A.; Cohen, M.L. |

    1997-09-01

    At zero pressure polymerized RbC{sub 60} is an insulator, whereas polymerized KC{sub 60} is a metal with a slight low-temperature resistive upturn. We report measurements of the resistivity of RbC{sub 60} under pressure, finding a hysteretic resistive transition in RbC{sub 60} near 200 K at 5 kbar, at which point the material transforms from insulator to metal. Correcting the resistivity to constant volume, both materials are metallic below the transition with a common low-temperature resistive upturn which is suppressed under compression. {copyright} {ital 1997} {ital The American Physical Society}

  7. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    SciTech Connect

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-24

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase.

  8. Size-dependent metal-insulator transition in platinum-dispersed silicon dioxide thin film: A candidate for future non-volatile memory

    NASA Astrophysics Data System (ADS)

    Chen, Albert B. K.

    Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, the goal of this study is to use a model material to delineate the intrinsic features of the electronic metal/insulator transition in random systems and to demonstrate their relevance to reliable memory storage and retrieval. We fabricated amorphous SiO2 thin films embedded with randomly dispersed Pt atoms. Macroscopically, this random material exhibits a percolation transition in electric conductivity similar to the one found in various insulator/metal granular materials. However, at Pt concentrations well below the bulk percolation limit, a distinct insulator to metal transition occurs in the thickness direction as the film thickness falls below electron's "diffusion" distance, which is the tunneling distance at 0K. The thickness-triggered metal- to-insulator transition (MIT) can be similarly triggered by other conditions: (a) a changing Pt concentration (a concentration-triggered MIT), (b) a changing voltage/polarity (voltage-triggered MIT), and (c) an UV irradiation (photon-triggered MIT). The resistance switching characteristics of this random material were further investigated in several device configurations under various test conditions. These include: materials for the top and bottom electrodes, fast pulsing, impedance spectroscopy, static stressing, retention, fatigue and temperature from 10K to 448K. The SiO2-Pt

  9. Metal-insulator transition in Nd{sub 1−x}Eu{sub x}NiO{sub 3}: Entropy change and electronic delocalization

    SciTech Connect

    Jardim, R. F. Andrade, S.; Barbeta, V. B.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-07

    The metal-insulator (MI) phase transition in Nd{sub 1–x}Eu{sub x}NiO{sub 3}, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat C{sub P}(T). The MI transition temperature (T{sub MI}) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dT{sub MI}/dP were found: (i) for x ≤ 0.15, dT{sub MI}/dP is nearly constant and ∼−4.3 K/kbar; (ii) for x ≥ 0.15, dT{sub MI}/dP increases with x and it seems to reach a saturation value ∼−6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of T{sub MI}. The entropy change (ΔS) at T{sub MI} for the sample x = 0, estimated by using the dT{sub MI}/dP data and the Clausius-Clapeyron equation, resulted in ΔS ∼ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔS{sub M} ∼ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and C{sub P}(T) data indicates that the entropy change at T{sub MI} is mainly due to the electronic delocalization and not related to the AF transition.

  10. Directing Colloidal Assembly and a Metal-Insulator Transition Using a Quench-Disordered Porous Rod Template

    NASA Astrophysics Data System (ADS)

    Jadrich, Ryan B.; Schweizer, Kenneth S.

    2014-11-01

    Replica and effective-medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly to achieve globally homogeneous, strongly clustered, and percolated equilibrium states of high electrical conductivity at low physical volume fractions. A key idea is to employ a quench-disordered, large-mesh rigid-rod network as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low-dimensional network and fluctuation-driven colloid clustering in the pore spaces, two distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. The approach is generalizable to more complicated template or colloidal architectures.

  11. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

  12. Continuous metal-insulator transition at 410 K of the antiferromagnetic perovskite NaOsO3

    NASA Astrophysics Data System (ADS)

    Yamaura, K.; Shi, Y. G.; Guo, Y. F.; Yu, S.; Arai, M.; Belik, A. A.; Sato, A.; Takayama-Muromachi, E.; Tian, H. F.; Yang, H. X.; Li, J. Q.; Varga, T.; Mitchell, J. F.; Okamoto, S.

    2010-03-01

    Newly synthesized perovskite NaOsO3 shows a Curie-Weiss metallic nature at high temperature and suddenly goes into an antiferromagnetically insulating state at 410 K on cooling. Electronic specific heat at the low temperature limit is absent, indicating that the band gap fully opens. In situ observation in electron microscopy undetected any lattice anomalies in the vicinity of the transition temperature. It is most likely that the antiferromagnetic correlation plays an essential role in the gap opening. Use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. This research was supported in part by the WPI Initiative on Materials Nanoarchitectonics from MEXT, Japan, and the Grants-in-Aid for Scientific Research (20360012) from JSPS.

  13. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    PubMed Central

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-01-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent. PMID:27033955

  14. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  15. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    DOE PAGESBeta

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Usingmore » space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

  16. Polarity and the Metal-Insulator Transition in ultrathin LaNiO3 on SrTiO3

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Tung, I. C.; Luo, G.; Zhou, H.; Lee, J. H.; Chang, S. H.; Morgan, D.; Bedzyk, M. J.; Fong, D. D.

    Dimensionality and strain control of nickelates has been shown as a route for control of interesting electronic and magnetic phases. However, little is know about the evolution of atomic structure in these layered architectures and the interplay with these states. Here we present, a detailed study of lattice structures measured real time during the layer-by-layer growth of LaNiO3 on SrTiO3. Using hard X-rays coupled with oxide MBE, we have tracked the lattice structure evolution as a function of depth across the regime where transport shows a clear metal to insulator transition. At the same time X-ray absorption shows the films are closer to LaNiO2.5 when thin and evolve to LaNiO3 by 10 unit cells thickness. Analysis of the structure during growth displays a very complex evolution throughout the film of the lattice parameter and displacement of the B-site from the unit cell center, which theory connects with pathways of compensating the polar mismatch at the surface and interface. Work at the APS, Argonne is supported by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  17. The metal-insulator transition in vanadium dioxide: A view at bulk and surface contributions for thin films and the effect of annealing

    SciTech Connect

    Yin, W.; West, K. G.; Lu, J. W.; Pei, Y.; Wolf, S. A.; Reinke, P.; Sun, Y.

    2009-06-01

    Vanadium dioxide is investigated as potential oxide barrier in spin switches, and in order to incorporate VO{sub 2} layers in complex multilayer devices, it is necessary to understand the relation between bulk and surface/interface properties. Highly oriented VO{sub 2} thin films were grown on (0001) sapphire single crystal substrates with reactive bias target ion beam deposition. In the analysis of the VO{sub 2} films, bulk-sensitive methods [x-ray diffraction (XRD) and transport measurements] and surface sensitive techniques [photoelectron spectroscopy (PES) and scanning tunneling microscopy and spectroscopy] were employed. The samples were subjected to heating cycles with annealing temperatures of up to 425 and 525 K. Prior to annealing the VO{sub 2} films exhibit the transition from the monoclinic to the tetragonal phase with the concurrent change in conductivity by more than a factor of 10{sup 3} and their phase purity is confirmed by XRD. Annealing to 425 K and thus cycling across the metal-insulator transition (MIT) temperature has no impact on the bulk properties of the VO{sub 2} film but the surface undergoes irreversible electronic changes. The observation of the valence band with PES during the annealing illustrates that the surface adopts a partially metallic character, which is retained after cooling. Annealing to a higher temperature (525 K) triggers a modification of the bulk, which is evidenced by a considerable reduction in the MIT characteristics, and a degradation in crystallite morphology. The local measurement of the conductivity with scanning tunneling spectroscopy shows the transition of the surface from predominantly semiconducting surface prior to annealing to a surface with an overwhelming contribution from metallic sections afterward. The spatial distribution of metallic regions cannot be linked in a unique manner to the crystallite size or location within the crystallites. The onset of oxygen depletion at the surface is held responsible

  18. Fluctuations of the order parameter in R 0.55Sr0.45MnO3 manganites near the metal-insulator phase transition

    NASA Astrophysics Data System (ADS)

    Bukhanko, F. N.; Bukhanko, A. F.

    2013-06-01

    The magnetic phase transformations induced by changes of the composition, external magnetic field strength, and temperature in manganites with a nearly half-filled conduction band in the vicinity of the metal-insulator phase transition have been investigated experimentally. It has been found that the substitution of rare-earth ions (Sm) for Nd ions with a larger ionic radius in R 0.55Sr0.45MnO3 manganites leads to a linear decrease in the Curie temperature T C from 270 to 130 K and a transformation of the second-order ferromagnetic (FM) phase transition into a first-order phase transition. The results of measurements of the alternating-current (ac) magnetic susceptibility in the (Nd1 - y Sm y )0.55Sr0.45MnO3 system indicate the existence of a Griffiths-like phase in samples with a samarium concentration y > 0.5 in the temperature range T C < T < T* (where T* ˜ 220 K). For samples with y > 0.5, the magnetization isotherms at temperatures above T C exhibit specific features in the form of reversible metamagnetic phase transitions associated with strong fluctuations of the short-range ferromagnetic order in the system of Mn spins in the high-temperature Griffiths phase consisting of ferromagnetic clusters. According to the results of measurements of the ac magnetic susceptibility in the (Sm1 - y Gd y )0.55Sr0.45MnO3 system for a gadolinium concentration y = 0.5, there is an antiferromagnetic (AFM) phase with an unusually low critical temperature of the spin ordering T N ≊ 48.5 K. An increase in the external static magnetic field at 4.2 K leads to an irreversible induction of the ferromagnetic phase, which is stable in the temperature range 4.2-60 K. In the temperature range 60 K < T < 150 K, there exists a high-temperature Griffiths-like phase consisting of clusters (correlations) with a local charge/orbital ordering. The metastable antiferromagnetic structure is retained in samples with gadolinium concentrations y = 0.6 and 0.7, but it is destroyed with a further

  19. Energy level transitions of gas in a 2D nanopore

    SciTech Connect

    Grinyaev, Yurii V.; Chertova, Nadezhda V.; Psakhie, Sergei G.

    2015-10-27

    An analytical study of gas behavior in a 2D nanopore was performed. It is shown that the temperature dependence of gas energy can be stepwise due to transitions from one size-quantized subband to another. Taking into account quantum size effects results in energy level transitions governed by the nanopore size, temperature and gas density. This effect leads to an abrupt change of gas heat capacity in the nanopore at the above varying system parameters.

  20. Graphene as a platform to study 2D electronic transitions

    NASA Astrophysics Data System (ADS)

    Bouchiat, Vincent; Kessler, Brian; Girit, Caglar; Zettl, Alex

    2010-03-01

    The easily accessible 2D electron gas in graphene provides an ideal platform on which to tune, via application of an electrostatic gate, the coupling between electronically ordered dopants deposited on its surface. To demonstrate this concept, we have measured arrays of superconducting clusters deposited on Graphene capable to induce via the proximity effect a gate-tunable superconducting transition. Using a simple fabrication procedure based on metal layer dewetting, doped graphene sheets can be decorated with a non percolating network on nanoscale tin clusters. This hybrid material displays a two-step superconducting transition. The higher transition step is gate independent and corresponds to the transition of the tin clusters to the superconducting state. The lower transition step towards a real zero resistance state exhibiting a well developped supercurrent, is strongly gate-tunable and is quantitatively described by Berezinskii-Kosterlitz-Thouless 2D vortex unbinding. Our simple self-assembly method and tunable coupling can readily be extended to other electronic order parameters such as ferro/antiferromagnetism, charge/spin density waves using similar decoration techniques. [1] B. M. Kessler, C.O. Girit, A. Zettl, and V. Bouchiat, Tunable Superconducting Phase Transition in Metal-Decorated Graphene Sheets submitted to PRL, arXiv:0907.3661

  1. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Mak, Kin Fai; Shan, Jie

    2016-04-01

    Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.

  2. Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1 -xSbxTe2 studied by angle-resolved photoemission

    NASA Astrophysics Data System (ADS)

    Trang, Chi Xuan; Wang, Zhiwei; Yamada, Keiko; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Segawa, Kouji; Ando, Yoichi

    2016-04-01

    We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1 -xSbxTe2 which is bulk insulating at 0.5 ≲x ≲0.9 and undergoes a metal-insulator-metal transition with the Sb content x . We found that this transition is characterized by a systematic hole doping with increasing x , which results in the Fermi-level crossings of the bulk conduction and valence bands at x ˜0 and x ˜1 , respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1 -xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

  3. 2D ice from first principles: structures and phase transitions

    NASA Astrophysics Data System (ADS)

    Chen, Ji; Schusteritsch, Georg; Pickard, Chris J.; Salzmann, Christoph G.; Michaelides, Angelos

    Despite relevance to disparate areas such as cloud microphysics and tribology, major gaps in the understanding of the structures and phase transitions of low-dimensional water ice remain. Here we report a first principles study of confined 2D ice as a function of pressure. We find that at ambient pressure hexagonal and pentagonal monolayer structures are the two lowest enthalpy phases identified. Upon mild compression the pentagonal structure becomes the most stable and persists up to ca. 2 GPa at which point square and rhombic phases are stable. The square phase agrees with recent experimental observations of square ice confined within graphene sheets. We also find a double layer AA stacked square ice phase, which clarifies the difference between experimental observations and earlier force field simulations. This work provides a fresh perspective on 2D confined ice, highlighting the sensitivity of the structures observed to both the confining pressure and width.

  4. Detailed mapping of the local Ir4+ dimers through the metal-insulator transitions of CuIr2S4 thiospinel by X-ray atomic pair distribution function measurements.

    PubMed

    Božin, E S; Masadeh, A S; Hor, Y S; Mitchell, J F; Billinge, S J L

    2011-01-28

    The evolution of the short-range structural signature of the Ir4+ dimer state in CuIr2S4 thiospinel has been studied across the metal-insulator phase transitions as the metallic state is induced by temperature, Cr doping, and x-ray fluence. An atomic pair distribution function (PDF) approach reveals that there are no local dimers that survive into the metallic phase when this is invoked by temperature and doping. The PDF shows Ir4+ dimers when they exist, regardless of whether or not they are long-range ordered. At 100 K, exposure to a 98 keV x-ray beam melts the long-range dimer order within a few seconds, though the local dimers remain intact. This shows that the metallic state accessed on warming and doping is qualitatively different from the state obtained under x-ray irradiation. PMID:21405330

  5. DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film

    SciTech Connect

    Huang, Haoliang; Luo, Zhenlin Yang, Yuanjun; Yang, Mengmeng; Wang, Haibo; Hu, Sixia; Bao, Jun; Yun, Yu; Meng, Dechao; Lu, Yalin; Gao, Chen

    2014-05-15

    The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2} to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

  6. Valence and origin of metal-insulator transition in Mn doped SrRuO 3 studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+ U calculation

    NASA Astrophysics Data System (ADS)

    Sahu, Ranjan K.; Pandey, Sudhir K.; Pathak, L. C.

    2011-03-01

    We have studied the valence and electronic properties of Mn doped SrRuO 3 using electrical transport measurement, X-ray photoelectron spectroscopy (XPS) and local (spin) density approximation plus Coulomb interaction strength calculation (LSDA+ U). The resistivity data revealed that the system undergoes transition from metal to insulator at the critical Mn doping level, x˜0.2, which is accompanied by the structural transition from orthorhombic to tetragonal crystal symmetry. Besides, the significant reduction of the spectral weight at the coherent zone (0.8 eV) of the valence band is observed for x>0.2. The core XPS spectra suggest that both the transition elements exist in the mixed ionic pair, Ru +4/Ru +5↔Mn +3/Mn +4. The detail analysis of the results suggests that the Coulomb correlation effect in conjugation with localization of the charge carriers predominate over the mixed ionic pair effect and responsible for the metal-insulator transition in the series.

  7. Topological phase transition in 2D porous media flows

    NASA Astrophysics Data System (ADS)

    Waisbord, Nicolas; Stoop, Norbert; Kantsler, Vasily; Guasto, Jeffrey S.; Dunkel, Jorn; Guasto Team; Dunkel Team; Kantsler Team

    2015-11-01

    Since the establishment of Darcy's law, analysis of porous-media flows has focused primarily on linking macroscopic transport properties, such as mean flow rate and dispersion, to the pore statistics of the material matrix. Despite intense efforts to understand the fluid velocity statistics from the porous-media structure, a qualitative and quantitative connection remains elusive. Here, we combine precisely controlled experiments with theory to quantify how geometric disorder in the matrix affects the flow statistics and transport in a quasi-2D microfluidic channel. Experimentally measured velocity fields for a range of different microstructure configurations are found to be in excellent agreement with large-scale numerical simulations. By successively increasing the matrix disorder, we study the transition from periodic flow structures to transport networks consisting of extended high-velocity channels. Morse-Smale complex analysis of the flow patterns reveals a topological phase transition that is linked to a qualitative change in the physical transport properties. This work demonstrates that topological flow analysis provides a mathematically well-defined, broadly applicable framework for understanding and quantifying fluid transport in complex geometries.

  8. Anomalous behavior of the surface tension at the interface of the metallic and insulating phases in the vicinity of the metal-insulator phase transition in a magnetic field

    NASA Astrophysics Data System (ADS)

    Dubovskii, L. B.

    2014-03-01

    Mean-field equations describing the metal-insulator (MI) transition are formulated. They involve two coupled order parameters characterizing this transition: (i) a scalar order parameter describing the density change accompanying the transition from the insulating state to the metallic one and (ii) an order parameter (a two-component vector) describing the electron density in the metallic or semimetallic phase affected by the applied magnetic field. Two components of this vector correspond to different possible spin states of electrons in the applied magnetic field. The transition in the density of metallic and insulating phases being a first order phase transition is treated in terms of the Cahn-Hilliard-type gradient expansion. The transition in the electron density is a second order phase described by the Ginzburg-Landau-type functional. The coupling of these two parameters is described by the term linearly dependent on the electron density n in the metal with the proportionality factor being a function of the density of the metallic phase. The derived equations are solved in the case of the MI interface in the presence of both parallel and perpendicular uniform magnetic fields. The calculated surface tension Σmi between the metallic and insulating phases has a singular behavior. In the limit of zero electron density n ⟹ 0, Σmi ˜ n 3/2. Near the MI transition point T c( h) in the applied magnetic field, Σmi ˜ [ T - T c( h)]3/2. The singular behavior of the surface tension at the MI interface results in the clearly pronounced hysteresis accompanying the transition from the insulating to metallic state and vice versa.

  9. Metal-insulator transition in antiferromagnetic Ba1−xKxMn2As2 (0≤x≤0.4) single crystals studied by 55Mn and 75As NMR

    SciTech Connect

    Yeninas, Steven; Pandey, Abhishek; Ogloblichev, V.; Mikhalev, K.; Johnston, David C.; Furukawa, Yuji

    2013-12-23

    The magnetic structure and metal-insulator transition in antiferromagnetic (AFM) BaMn2As2 and Ba1−xKxMn2As2 single crystals have been investigated by 55Mn and 75As nuclear magnetic resonance (NMR) measurements. In the parent AFM insulator BaMn2As2 with a Néel temperature TN=625 K, we observed a 55Mn zero-field NMR (ZFNMR) spectrum and confirmed the G-type AFM structure from the field dependence of the 55Mn spectra and 75As NMR spectra below TN. In hole-doped crystals with x>0.01, similar 55Mn ZFNMR spectra were observed and the AFM state was revealed to be robust up to x=0.4 with the ordered moment nearly independent of x. The nuclear spin-lattice relaxation rates (1/T1) for both nuclei in the doped samples follow the Korringa relation T1T=const, indicating a metallic state. This confirms the coexistence of AFM ordered localized Mn spins and conduction carriers from a microscopic point of view. From the x dependence of (T1T)−1/2 for both nuclei, we conclude that this transition is caused by vanishing of the hole concentration as the transition is approached from the metallic side.

  10. Metal-Insulator Transition of the New One-Dimensional Organic Conductors with Complete Uniform Stacks: (DMEDO-TTF)2X (X = ClO4 and BF4)

    NASA Astrophysics Data System (ADS)

    Kumeta, Shohei; Kawamoto, Tadashi; Shirahata, Takashi; Misaki, Yohji; Mori, Takehiko

    2016-09-01

    The structural, transport, and magnetic properties of the new organic conductors (DMEDO-TTF)2X (X = ClO4 and BF4), where DMEDO-TTF is dimethyl(ethylenedioxy)tetrathiafulvalene, have been investigated. These compounds have a complete uniform stack structure, indicating that a quasi-one-dimensional 3/4-filled band without a dimerization gap is realized. The ClO4 and BF4 salts show a first-order metal-insulator (MI) transition at approximately 190 and 210 K, respectively, in the cooling process. The ground state is a nonmagnetic insulator on the basis of magnetic susceptibility measurements. Low-temperature X-ray diffraction measurements show that the MI transition originates in the anion ordering transition with a superstructure wave vector of q = (0,1/2,0) corresponding to the stacking direction; the uniform donor stacking structure changes to the tetramerized structure with a large shift of the donors. The shift of the anion toward the central two donors in a tetramer indicates that the insulating phase is a charge-density-wave state.

  11. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br

    NASA Astrophysics Data System (ADS)

    Brandenburg, Jens; Müller, Jens; Schlueter, John A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  12. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    SciTech Connect

    Shao, Tao; Qi, Zeming Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin; Wang, Yu; Liu, Miao

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  13. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in kappa-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br.

    SciTech Connect

    Brandenburg, J.; Muller, J.; Schlueter, J. A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt {kappa}-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  14. Aspects of Localization across the 2d Superconductor-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Trivedi, Nandini; Loh, Yen Lee; Bouadim, Karim; Randeria, Mohit

    2013-10-01

    It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on the order of Vc ˜ 2t), where V is the typical width of the distribution of random site energies and t is the hopping scale. In this article we compare the localization/delocalization properties of one and two particles. Whereas the metal-insulator transition is a consequence of singleparticle Anderson localization, the superconductor-insulator transition (SIT) is due to pair localization - or, alternatively, fluctuations of the phase conjugate to pair density. The central question we address is how superconductivity emerges from localized single-particle states. We address this question using inhomogeneous mean field theory and quantum Monte Carlo techniques and make several testable predictions for local spectroscopic probes across the SIT. We show that with increasing disorder, the system forms superconducting blobs on the scale of the coherence length embedded in an insulating matrix. In the superconducting state, the phases on the different blobs are coherent across the system whereas in the insulator long-range phase coherence is disrupted by quantum fluctuations. As a consequence of this emergent granularity, we show that the single-particle energy gap in the density of states survives across the transition, but coherence peaks exist only in the superconductor. A characteristic pseudogap persists above the critical disorder and critical temperature, in contrast to conventional theories. Surprisingly, the insulator has a two-particle gap scale that vanishes at the SIT despite a robust single-particle gap.

  15. Active Metal-Insulator-Metal Plasmonic Devices

    NASA Astrophysics Data System (ADS)

    Diest, Kenneth Alexander

    these devices can preferentially couple to any of the primary colors and can tune the output color of the device with an applied field. The second part of this thesis looks at fabricating metal-insulator-metal waveguides with n-type silicon and indium tin oxide. With the silicon device, by tuning the thicknesses of the layers used in a metal-oxide semiconductor geometry, the device we call the "plasMOStor" can support plasmonic modes as well as exactly one photonic mode. With an applied field, this photonic mode is pushed into cutoff and modulation depths of 11.2 dB are achieved. With the indium tin oxide device, the doping density within the material is changed and as a result, the plasma frequency is shifted into the near-infrared and visible wavelengths. Using spectroscopic ellipsometry, the structure is characterized with and without an applied electric field, and measurements show that when an accumulation layer is formed within the structure, the index of refraction within that layer is significantly changed and as a result, will change the optical modes supported in such a structure.

  16. Metal-insulator transition and emergence of spontaneous polarization in (La1-xSrxMnO3)m /(LaNiO3)n superlattices constructed from metallic building blocks

    NASA Astrophysics Data System (ADS)

    Ghosh, Saurabh; Mishra, Rohan; Hoffman, Jason; Bhattacharya, Anand; Borisevich, Albina Y.; Pantelides, Sokrates T.

    La0.7Sr0.3MnO3 and LaNiO3 are metallic oxides. However, short-period superlattices of the form (La0.7Sr0.3MnO3)m /(LaNiO3)n show insulating behavior depending on m and n. In particular, the insulating property is robust when m = n = 2 (SL 2/2). Here, using first-principles density functional theory (DFT) and DFT+U (static d - d Coulomb interaction), we explain the experimental observation and discuss a general mechanism that underlies such metal-insulator transition for different m and n. The general mechanism is based on the finding that disproportionation on Ni sites is the key. Further, we predict that insulating SL 2/2 is ferroelectric with large spontaneous polarization. The ferroelectric distortion persists in the cases where the superlattices are metallic, which leads to the possibility of designing a new family of 'polar metals'. Finally, we discuss the origin of such polar distortion and its coupling with the magnetic properties (by considering spin-phonon coupling) of the material. This work is supported by DOE Grant Number DE-FG02-09ER46554 and DOE BES DMSE.

  17. Controlling the sharpness of metal-insulator transition in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (0 ≤ x ≤ 0.35) films

    NASA Astrophysics Data System (ADS)

    Chen, Pingfan; Huang, Zhen; Tan, Xuelian; Chen, Binbin; Zhi, Bowen; Gao, Guanyin; Chen, Feng; Wu, Wenbin

    2014-10-01

    We report that epitaxial strain and chemical doping can be used cooperatively to tune the sharpness of metal-insulator transition (MIT) in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (LPCMO) films. Compared to multiple MITs in anisotropically strained LPCMO/(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(001)C (LSAT) films with a phase-separated ground state, the lattice-matched LPCMO/NdGaO3(110)Or (NGO) films show a sharp MIT near the Curie temperature (TC), with a ferromagnetic-metallic ground state. The sharpness of MIT, as evaluated by the temperature coefficient of resistance (TCR), can be two times larger in LPCMO/NGO films than in LPCMO/LSAT films. Moreover, for LPCMO/NGO films, TCR greatly relies on the Pr doping level x, where a maximum TCR value of 88.17% K-1 can be obtained at x = 0.25, but shows less dependence on the film thicknesses. These results suggest that the combination of epitaxial strain and chemical doping could be employed to control not only the ground state of the manganite films, but the sharpness of MIT at various TC, providing the feasibility to design manganite-based infrared devices in a broad temperature range.

  18. Enhanced ferromagnetic and metal insulator transition in Sm0.55Sr0.45MnO3 thin films: Role of oxygen vacancy induced quenched disorder

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Siwach, P. K.; Kaur, A.; Singh, H. K.

    2010-11-01

    Effect of quenched disorder (QD) caused by oxygen vacancy (OV) and substrate induced inhomogeneous compressive strain, on the magnetic and transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films is investigated. QD is related intimately to the ordering/disordering of the OVs and controls the paramagnetic-ferromagnetic/insulator-metal transition. OV ordered films show enhanced TC/TIM˜165 K, which is depressed by oxygen annealing. OV disordering realized by quenching reduces TC/TIM. The first order IM transition observed in SSMO single crystals is transformed into nonhysteretic and continuous one in the OV ordered films. QD appears to be diluted by OV disorder/annihilation and results in stronger carrier localization.

  19. Electric-field-driven Mott metal-insulator transition in correlated thin films: An inhomogeneous dynamical mean-field theory approach

    NASA Astrophysics Data System (ADS)

    Bakalov, P.; Nasr Esfahani, D.; Covaci, L.; Peeters, F. M.; Tempere, J.; Locquet, J.-P.

    2016-04-01

    Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half filling leads to the appearance of conducting regions near the surfaces of the film, whereas in doped slabs the application of a field leads to a conductivity enhancement on one side of the film and a gradual transition to the insulating state on the opposite side. In addition to the inhomogeneous DMFT, a local density approximation (LDA) is considered in which the particle density n , quasiparticle residue Z , and spectral weight at the Fermi level A (ω =0 ) of each layer are approximated by a homogeneous bulk environment. A systematic comparison between the two approaches reveals that the less expensive LDA results are in good agreement with the DMFT approach, except close to the metal-to-insulator transition points and in the layers immediately at the film surfaces. LDA values for n are overall more reliable than those for Z and A (ω =0 ) . The hysteretic behavior (memory effect) characteristic of the bulk doping driven Mott transition persists in the slab.

  20. Metal-insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

    NASA Astrophysics Data System (ADS)

    Capon, F.; Laffez, P.; Bardeau, J.-F.; Simon, P.; Lacorre, P.; Zaghrioui, M.

    2002-07-01

    Nd0.7Eu0.3NiO3 thin films are deposited by rf sputtering and subsequent oxygen pressure annealing on (100) oriented silicon substrate. We characterize the thermochromic properties of films by measuring electrical transition, infrared transmittance, and reflectance. The thermochromic effect at room temperature is observed. Resistivity measurements exhibit a sharper hysteresis loop than is usually observed in NdNiO3 thin films. Infrared properties in the 8-14 mum wavelength range spectra reveal a contrast of 30% in reflectance and 55% in transmittance.

  1. Finite-size driven topological and metal-insulator transition in (Bi1-xInx)2 Se3thin films

    NASA Astrophysics Data System (ADS)

    Salehi, Maryam; Shapourian, Hassan; Koirala, Nikesh; Brahlek, Matthew; Moon, Jisoo; Oh, Seongshik

    In a topological insulator (TI), if one of its heavy elements is replaced by a light one, the spin-orbit coupling (SOC) strength decreases and eventually the TI transforms into a normal insulator beyond a critical level of substitution.This is the standard description of the topological phase transition (TPT). However, this notion of TPT, driven solely by the SOC (or something equivalent), is not complete for finite size samples considering that the thickness of the topological surface states diverges at the critical point. Here, on specially-engineered (BixIn1-x)2 Se3 thin films, using systematic transport measurments we show that not only the SOC but also the finite sample size can induce TPT. This study sheds light on the role of spatial confinement as an extra tuning parameter controlling the topological critical point.

  2. Magnetism variations and susceptibility hysteresis at the metal-insulator phase transition temperature of VO2 in a composite film containing vanadium and tungsten oxides

    NASA Astrophysics Data System (ADS)

    Akande, Amos A.; Rammutla, Koena E.; Moyo, Thomas; Osman, Nadir S. E.; Nkosi, Steven S.; Jafta, Charl J.; Mwakikunga, Bonex W.

    2015-02-01

    We report on the magnetic property of 0.67-WO3+0.33-VOx mixture film deposit on the corning glass substrate using the chemical sol-gel and atmospheric pressure chemical vapor deposition (APCVD) methods. The XRD and Raman spectroscopy confirm species of both materials, and the morphological studies with FIB-SEM and TEM reveal segregation of W and V atoms. XPS reveals that V4+ from VO2 forms only 11% of the film; V3+ in the form of V2O3 form 1% of the film, 21% is V5+ from V2O5 and 67% is given to W6+ from WO3. The analysis of the ESR data shows some sharp changes in the magnetism near the metal-to-insulator (MIT), which could be theoretically interpreted as the ordering or alignment of electron spins from net moment nature to parallel alignment of magnetic moment. The derivatives of magnetic susceptibility established the thermally induced magnetic property: two distinct transitions of 339 K for heating data and 338 K for cooling data for 151.2 mT field were obtained. Similar results were also obtained for 308.7 mT field, 336 K for heating data and 335 K for cooling data. VSM results confirm a paramagnetic phase with a small amount of magnetically ordered phase.

  3. Metal insulator transition and magnetotransport anomalies in perovskite SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Lee, Yong Woo; Kim, Sang Woo; Jeong, Yoon Hee

    2015-03-21

    We investigated the nature of transport and magnetic properties in SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} (SIRO), which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (e.g., SrTiO{sub 3} (001), (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7} (001), and LaAlO{sub 3} (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures (T{sub MIT} ∼ 80 K on SrTiO{sub 3}, ∼90 K on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7}, and ∼100 K on LaAlO{sub 3}) in resistivity. At temperature 300 K ≥ T ≥ T{sub MIT}, SIRO is metallic and its resistivity follows a T{sup 3/2} power law, whereas insulating nature at T < T{sub MIT} is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO{sub 3} (001) shows negative MR at T < 25 K and positive MR at T > 25 K, with negative MR ∝ B{sup 1/2} and positive MR ∝ B{sup 2}; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO{sub 3} (001) at T < 25 K in the localized regime validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.

  4. Electron Energy Levels in the 1D-2D Transition

    NASA Astrophysics Data System (ADS)

    Pepper, Michael; Sanjeev, Kumar; Thomas, Kalarikad; Creeth, Graham; English, David; Ritchie, David; Griffiths, Jonathan; Farrer, Ian; Jones, Geraint

    Using GaAs-AlGaAs heterostructures we have investigated the behaviour of electron energy levels with relaxation of the potential confining a 2D electron gas into a 1D configuration. In the ballistic regime of transport, when the conductance shows quantized plateaux, different types of behaviour are found according to the spins of interacting levels, whether a magnetic field is applied and lifting of the momentum degeneracy with a source-drain voltage. We have observed both crossing and anti-crossing of levels and have investigated the manner in which they can be mutually converted. In the presence of a magnetic field levels can cross and lock together as the confinement is altered in a way which is characteristic of parallel channels. The overall behaviour is discussed in terms of electron interactions and the wavefunction flexibility allowed by the increasing two dimensionality of the electron distribution as the confinement is weakened. Work supported by UK EPSRC.

  5. 2D to 3D transition of polymeric carbon nitride nanosheets

    SciTech Connect

    Chamorro-Posada, Pedro; Vázquez-Cabo, José; Martín-Ramos, Pablo; Martín-Gil, Jesús; Navas-Gracia, Luis M.; Dante, Roberto C.

    2014-11-15

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

  6. Measurements of Schottky barrier heights formed from metals and 2D transition metal dichalcogedides

    NASA Astrophysics Data System (ADS)

    Kim, Changsik; Moon, Inyong; Nam, Seunggeol; Cho, Yeonchoo; Shin, Hyeon-Jin; Park, Seongjun; Yoo, Won Jong

    Schottky barrier height (SBH) is an important parameter that needs to be considered for designing electronic devices. However, for two dimensional (2D) materials based devices, SBH control is limited by 2D structure induced quantum confinement and 2D surface induced Fermi level pinning. In this work, we explore differences in measuring SBH between 2D and 3D materials. Recently, low temperature I-V measurement has been reported to extract SBH based on thermionic emission equation for Schottky diode. However, 2D devices are not real Schottky diode in that both source and drain metal electrodes make Schottky contact. According to our experimental results, SBH extracted from linear slope of ln (I/T3/2) against 1/T show widely diverse values, dependent on applied voltage bias and tested temperature which affect carrier transport including tunneling or thermionic emission across the metal-2D material interface. In this work, we wish to demonstrate the method to determine SBH and Fermi level pinning which are attributed to 2D transition metal dichalcogedides, differently from conventional 3D materials. .

  7. 2D crystals of transition metal dichalcogenide and their iontronic functionalities

    NASA Astrophysics Data System (ADS)

    Zhang, Y. J.; Yoshida, M.; Suzuki, R.; Iwasa, Y.

    2015-12-01

    2D crystals based on transition metal dichalcogenides (TMDs) provide a unique platform of novel physical properties and functionalities, including photoluminescence, laser, valleytronics, spintronics, piezoelectric devices, field effect transistors (FETs), and superconductivity. Among them, FET devices are extremely useful because of voltage-tunable carrier density and Fermi energy. In particular, high density charge accumulation in electric double layer transistor (EDLT), which is a FET device driven by ionic motions, is playing key roles for expanding the functionalities of TMD based 2D crystals. Here, we report several device concepts which were realized by introducing EDLTs in TMDs, taking the advantage of their extremely unique band structures and phase transition phenomena realized simply by thinning to the monolayer level. We address two kinds of TMDs based on group VI and group V transition metals, which basically yield semiconductors and metals, respectively. For each system, we first introduce peculiar characteristics of TMDs achieved by thinning the crystals, followed by the related FET functionalities.

  8. Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

    SciTech Connect

    Das, Amit K. Ajimsha, R. S.; Kukreja, L. M.

    2014-05-21

    Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.

  9. Thin Nanoporous Metal-Insulator-Metal Membranes.

    PubMed

    Aramesh, Morteza; Djalalian-Assl, Amir; Yajadda, Mir Massoud Aghili; Prawer, Steven; Ostrikov, Kostya Ken

    2016-02-01

    Insulating nanoporous materials are promising platforms for soft-ionizing membranes; however, improvement in fabrication processes and the quality and high breakdown resistance of the thin insulator layers are needed for high integration and performance. Here, scalable fabrication of highly porous, thin, silicon dioxide membranes with controlled thickness is demonstrated using plasma-enhanced chemical-vapor-deposition. The fabricated membranes exhibit good insulating properties with a breakdown voltage of 1 × 10(7) V/cm. Our calculations suggest that the average electric field inside a nanopore of the membranes can be as high as 1 × 10(6) V/cm; sufficient for ionization of wide range of molecules. These metal-insulator-metal nanoporous arrays are promising for applications such soft ionizing membranes for mass spectroscopy. PMID:26846250

  10. Spectroscopic investigation of the 3d 2D → nf 2F transitions in lithium

    NASA Astrophysics Data System (ADS)

    Shahzada, S.; Shah, M.; Haq, S. U.; Nawaz, M.; Ahmed, M.; Nadeem, Ali

    2016-05-01

    We report term energies and effective quantum numbers of the odd parity 3d 2D → nf 2F series of lithium using multi-step and multi-photon laser excitation schemes. The experiments were performed using three dye lasers simultaneously pumped by the second harmonic (532 nm) of a Q-switched Nd:YAG laser in conjunction with an atomic beam apparatus and thermionic diode ion detector. The first ionization potential of lithium has been determined as 43,487.13 ± 0.02 cm- 1 from the much extended 3d 2D → nf 2F (17 ≤ n ≤ 70) series. In addition, the oscillator strengths of the 3d 2D → nf 2F (15 ≤ n ≤ 48) transitions have been determined, showing a decreasing trend with the increase in principal quantum number n.

  11. The 2d MIT: The Pseudogap and Fermi Liquid Theory

    NASA Astrophysics Data System (ADS)

    Castner, T. G.

    2005-06-01

    Fermi liquid theory for the 2d metal-insulator transition is extended to include the correlation gap in the density-of-states. The results are consistent with the scaling form g=gce[on(To/T)] at T larger than a characteristic T* ∝ xTc (Tc=Ec= mobility edge). The two-component model n1+nloc=n=nc(1+x) for n>nc is required and the theory explains the T-dependence of the data of Hanein et al. for p-type GaAs.

  12. Numerical studies of the melting transition in 2D Yukawa systems

    SciTech Connect

    Hartmann, P.; Donko, Z.; Kalman, G. J.

    2008-09-07

    We present the latest results of our systematic studies of the solid--liquid phase transition in 2D classical many-particle systems interacting with the Yukawa potential. Our previous work is extended by applying the molecular dynamic simulations to systems with up to 1.6 million particles in the computational box (for {kappa} = 2 case). Equilibrium simulations are performed for different coupling parameters in the vicinity of the expected melting transition ({gamma}{sub m}{sup {kappa}}{sup ={sup 2}}{approx_equal}415) and a wide range of observables are averaged over uncorrelated samples of the micro-canonical ensemble generated by the simulations.

  13. Broadband microwave study of 2D superconductor-insulator quantum phase transition

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Pan, Lidong; Kim, Minsoo; Ganapathy, Sambandamurthy; Armitage, Peter

    2012-02-01

    Using our broadband microwave spectrometer, we investigate the complex AC conductance of disordered InOx films as a function of magnetic field through the 2D superconductor-insulator quantum phase transition. We have studied the behaviors of the frequency dependent complex response function of a particular InOx sample near the critical point in the limit of φ< K BT and φ> K BT and compare our results to theoretical models. We discuss the possibility for a novel insulating state on the insulating side of the transition through the frequency dependent conductance.

  14. Phase Transitions in Quasi-2D Plasma-Dust Systems: Simulations and Experiments

    NASA Astrophysics Data System (ADS)

    Petrov, Oleg; Vasiliev, Mikhail; Statsenko, Konstantin; Koss, Xeniya; Vasilieva, Elena; Myasnikov, Maxim; Lisin, Evgeny

    2015-11-01

    A nature of phase transition in quasi-2D dusty plasma structures was studied and the influence of the quasi-2D cluster size (a number of particles in it) on the features of the phase transition was investigated. Experiments and numerical simulation was conducted for the systems consisting of small (~ 10) and large (~ 103) number of particles. To investigate the phase state of the system with 7, 18 and 100 particles observed in numerical and laboratory experiments, we used the method based on analysis of dynamic entropy. Numerical modeling of small systems was conducted by the Langevin molecular dynamic method with the Langevin force, responsible for the stochastic nature of the motion of particles with a given kinetic temperature. Phase state of systems with the number of elements in the order of 103, was studied using the methods of statistical thermodynamics. Here we present new results of an experimental study of the change of translational and orientational order and topological defects, and the pair interactions at 2D melting of dust cluster in rf discharge plasma. The experimental results have revealed the existence of hexatic phase as well as solid-to-hexatic phase and hexatic-to-liquid transitions. This work was supported by the Russian Science Foundation (O.F. Petrov, M.M.Vasiliev, K.B. Stacenko, X.G. Koss, E.V. Vasilieva, M.I.Myasnikov and E.?.Lisin) through Grant No. 14-12-01440).

  15. Determining Transition State Geometries in Liquids Using 2D-IR

    SciTech Connect

    Harris, Charles; Cahoon, James F.; Sawyer, Karma R.; Schlegel, Jacob P.; Harris, Charles B.

    2007-12-11

    Many properties of chemical reactions are determined by the transition state connecting reactant and product, yet it is difficult to directly obtain any information about these short-lived structures in liquids. We show that two-dimensional infrared (2D-IR) spectroscopy can provide direct information about transition states by tracking the transformation of vibrational modes as a molecule crossed a transition state. We successfully monitored a simple chemical reaction, the fluxional rearrangement of Fe(CO)5, in which the exchange of axial and equatorial CO ligands causes an exchange of vibrational energy between the normal modes of the molecule. This energy transfer provides direct evidence regarding the time scale, transition state, and mechanism of the reaction.

  16. Microphase formation at a 2D solid-gas phase transition.

    PubMed

    Schuman, Adam W; Bsaibes, Thomas S; Schlossman, Mark L

    2014-10-01

    Density modulated micro-separated phases (microphases) occur at 2D liquid interfaces in the form of alternating regions of high and low density domains. Brewster angle microscopy (BAM) images demonstrate the existence of microphases in cluster, stripe, and mosaic morphologies at the buried interface between hexane and water with fluoro-alkanol surfactant dissolved in the bulk hexane. At high temperature, the surfactant assembles at the interface in a 2D gaseous state. As the system is cooled additional surfactants condense onto the interface, which undergoes a 2D gas-solid phase transition. Microphase structure is observed within a few degrees of this transition in the form of clusters and labyrinthine stripes. Microphases have been observed previously in a number of other systems; nevertheless, we demonstrate that adsorption transitions at the liquid-liquid interface provide a convenient way to observe a full sequence of temperature-dependent 2D phases, from gas to cluster to stripe to mosaic to inverted stripe phases, as well as coexistence between some of these microphases. Cracking and fracture of the clusters reveal that they are a solid microphase. Theories of microphases often predict a single length scale for cluster and stripe phases as a result of the competition between an attractive and a repulsive interaction. Our observation that two characteristic length scales are required to describe clusters whose diameter is much larger than the stripe period, combined with the solid nature of the clusters, suggests that a long-range elastic interaction is relevant. These results complement earlier X-ray measurements on the same system. PMID:25088351

  17. Roton Excitations and the Fluid-Solid Phase Transition in Superfluid 2D Yukawa Bosons

    NASA Astrophysics Data System (ADS)

    Molinelli, S.; Galli, D. E.; Reatto, L.; Motta, M.

    2016-05-01

    We compute several ground-state properties and the dynamical structure factor of a zero-temperature system of Bosons interacting with the 2D screened Coulomb (2D-SC) potential. We resort to the exact shadow path integral ground state (SPIGS) quantum Monte Carlo method to compute the imaginary-time correlation function of the model, and to the genetic algorithm via falsification of theories (GIFT) to retrieve the dynamical structure factor. We provide a detailed comparison of ground-state properties and collective excitations of 2D-SC and ^4 He atoms. The roton energy of the 2D-SC system is an increasing function of density, and not a decreasing one as in ^4 He. This result is in contrast with the view that the roton is the soft mode of the fluid-solid transition. We uncover a remarkable quasi-universality of backflow and of other properties when expressed in terms of the amount of short-range order as quantified by the height of the first peak of the static structure factor.

  18. metal-insulator-metal (MIM) devices

    NASA Astrophysics Data System (ADS)

    Khaldi, O.; Jomni, F.; Gonon, P.; Mannequin, C.; Yangui, B.

    2014-09-01

    This paper is devoted to the study of the electrical properties of Au/HfO2/TiN metal-insulator-metal (MIM) capacitors in three distinctive modes: (1) alternative mode ( C- f), (2) dynamic regime [thermally stimulated currents, TSCs I( T)] and (3) static mode [ I( V)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency C- f characteristic possesses a low-frequency dispersion that arises for high temperature ( T > 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy E a ~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C ( E a ~ 1 eV) is in agreement with impedance spectroscopy ( C- f). On the other hand, when the MIM structures are analyzed in static mode, the I- V plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV.

  19. Transient slip behaviour of metal/insulator pairs at 4.2 K

    NASA Astrophysics Data System (ADS)

    Kensley, R. S.; Maeda, H.; Iwasa, Y.

    Experiments have been conducted to observe the sliding behaviour, at 4.2 K, of freshly prepared metal/insulator combinations during a set of sequential slip tests. Measurements of the tangential force versus displacement, as well as displacement and acoustic emission rate versus time, were recorded. A triboelectric effect was also monitored. Depending on the particular metal/insulator pair tested, completely stable (slow velocity), completely unstable (rapid velocity), or a transition from unstable to stable sliting behaviour was observed. This transition behaviour was noticed for several metal/insulator combinations commonly used in superconducting magnet windings. An asperity plowing model is proposed to account for this behaviour, and is based upon the abrasive action of rubbing materials poorly matched in hardness against each other. The training phenomenon in unimpregnated superconducting magnet windings may be attributable to this wearing-in of frictional surfaces. A simple epoxy coating technique was successful in eliminating initial rapid slip events, thereby completely stabilizing the sliding behaviour of a conductor/insulator combination.

  20. Light matter interactions in 2D transitional metal dichalcogenides: excitonic emission and valley splitting

    NASA Astrophysics Data System (ADS)

    Yu, Ting

    2015-03-01

    Two-dimensional (2D) semiconductors, such as transitional-metal-dichalcogenide monolayers (TMD 1Ls), have aroused great interest because of the underlying fundamental physics (e.g. many body effects and wealth excitonic states) and the promising optoelectronic applications such as light-emitting diodes and solar cells. Here, we report excitonic emission and valley splitting of monolayer WS2 and MoS2 under electrical, optical and magnetic manipulation. Through electrical and optical injection of charge carriers, tunable excitonic emission has been realized due to interplay of various excitonic states, and basic binding energies of trions have been extracted. At low temperature, the Zeeman shifts of excitons and trions have been determined by polarization-dependent photoluminescence measurements under perpendicular magnetic fields, which reveal the breaking of valley degeneracy. Our studies provide the fundamental understanding on large excitonic and unique valleytronic effects in TMD 1Ls. Moreover, we also develop multiple strategies for managing the light emission, which opens up many possibilities for improving the performance and creating the multifunction of 2D TMD-based light emitting applications. Also at Department of Physics, Faculty of Science, National University of Singapore 117542, Singapore; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore 117546, Singapore.

  1. Transport studies in 2D transition metal dichalcogenides and black phosphorus.

    PubMed

    Du, Yuchen; Neal, Adam T; Zhou, Hong; Ye, Peide D

    2016-07-01

    Two-dimensional (2D) materials are a new family of materials with interesting physical properties, ranging from insulating hexagonal boron nitride, semiconducting or semi-metallic transition metal dichalcogenides, to gapless metallic graphene. In this review, we provide a brief discussion of transport studies in transition metal dichalcogenides, including both semiconducting and semi-metallic phases, as well as a discussion of the newly emerged narrow bandgap layered material, black phosphorus, in terms of its electrical and quantum transport properties at room and cryogenic temperatures. Ultra-thin layered channel materials with atomic layer thickness in the cross-plane direction, together with relatively high carrier mobility with appropriate passivation techniques, provide the promise for new scientific discoveries and broad device applications. PMID:27187790

  2. Enantiomeric Excess-Tuned 2D Structural Transition: From Heterochiral to Homochiral Supramolecular Assemblies.

    PubMed

    Li, Shu-Ying; Chen, Ting; Wang, Lin; Sun, Bing; Wang, Dong; Wan, Li-Jun

    2016-07-12

    Spontaneous resolution of enantiomers is an intriguing and important phenomenon in surface chirality studies. Herein, we report on a two-dimensional (2D) structural transition from the heterochiral to homochiral assembly tuned by changing the enantiomeric excess (ee) of enantiomers in the solution phase. Enantiomers cocrystallize as racemates on the surface when the ee of the R-enantiomer (or S-enantiomer) remains below a critical value, whereas chiral segregation is achieved, and globally homochiral surfaces composed of exclusively one enantiomer are obtained as the critical ee is exceeded. The heterochiral-homochiral transition is ascribed to the formation of energetically unfavored homochiral molecular dimers under the control of the majority-rules principle at high ee values. Such results present an intriguing phenomenon in chiral ordering at surfaces, promising a new enlightenment toward understanding chiral resolution and the evolution of chirality. PMID:27287273

  3. Transport studies in 2D transition metal dichalcogenides and black phosphorus

    NASA Astrophysics Data System (ADS)

    Du, Yuchen; Neal, Adam T.; Zhou, Hong; Ye, Peide D.

    2016-07-01

    Two-dimensional (2D) materials are a new family of materials with interesting physical properties, ranging from insulating hexagonal boron nitride, semiconducting or semi-metallic transition metal dichalcogenides, to gapless metallic graphene. In this review, we provide a brief discussion of transport studies in transition metal dichalcogenides, including both semiconducting and semi-metallic phases, as well as a discussion of the newly emerged narrow bandgap layered material, black phosphorus, in terms of its electrical and quantum transport properties at room and cryogenic temperatures. Ultra-thin layered channel materials with atomic layer thickness in the cross-plane direction, together with relatively high carrier mobility with appropriate passivation techniques, provide the promise for new scientific discoveries and broad device applications.

  4. Interfractional trend analysis of dose differences based on 2D transit portal dosimetry

    NASA Astrophysics Data System (ADS)

    Persoon, L. C. G. G.; Nijsten, S. M. J. J. G.; Wilbrink, F. J.; Podesta, M.; Snaith, J. A. D.; Lustberg, T.; van Elmpt, W. J. C.; van Gils, F.; Verhaegen, F.

    2012-10-01

    Dose delivery of a radiotherapy treatment can be influenced by a number of factors. It has been demonstrated that the electronic portal imaging device (EPID) is valuable for transit portal dosimetry verification. Patient related dose differences can emerge at any time during treatment and can be categorized in two types: (1) systematic—appearing repeatedly, (2) random—appearing sporadically during treatment. The aim of this study is to investigate how systematic and random information appears in 2D transit dose distributions measured in the EPID plane over the entire course of a treatment and how this information can be used to examine interfractional trends, building toward a methodology to support adaptive radiotherapy. To create a trend overview of the interfractional changes in transit dose, the predicted portal dose for the different beams is compared to a measured portal dose using a γ evaluation. For each beam of the delivered fraction, information is extracted from the γ images to differentiate systematic from random dose delivery errors. From the systematic differences of a fraction for a projected anatomical structures, several metrics are extracted like percentage pixels with |γ| > 1. We demonstrate for four example cases the trends and dose difference causes which can be detected with this method. Two sample prostate cases show the occurrence of a random and systematic difference and identify the organ that causes the difference. In a lung cancer case a trend is shown of a rapidly diminishing atelectasis (lung fluid) during the course of treatment, which was detected with this trend analysis method. The final example is a breast cancer case where we show the influence of set-up differences on the 2D transit dose. A method is presented based on 2D portal transit dosimetry to record dose changes throughout the course of treatment, and to allow trend analysis of dose discrepancies. We show in example cases that this method can identify the causes of

  5. Suppression of the metal-insulator transition by magnetic field in (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} (y = 0.0625)

    SciTech Connect

    Naito, Tomoyuki Fujishiro, Hiroyuki; Nishizaki, Terukazu; Kobayashi, Norio; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2014-06-21

    The (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} compound (y = 0.0625, T{sub MI-SS}=40 K), at the lower limit for occurrence of the first-order metal-insulator (MI) and simultaneous spin-state (SS) transitions, has been studied using electrical resistivity and magnetization measurements in magnetic fields up to 17 T. The isothermal experiments demonstrate that the low-temperature insulating phase can be destabilized by an applied field and the metallic phase returns well below the transition temperature T{sub MI-SS}. The reverse process with decreasing field occurs with a significant hysteresis. The temperature scans taken at fixed magnetic fields reveal a parabolic-like decrease in T{sub MI-SS} with increasing field strength and a complete suppression of the MI-SS transition in fields above 9 T.

  6. Observation of 2D Ising criticality of liquid-gas transition by the flowgram method

    NASA Astrophysics Data System (ADS)

    Yarmolinsky, Max; Kuklov, Anatoly

    We study the critical properties of the transition in 2D liquid-gas system with the square-well potential interaction by Monte Carlo simulations in the grand canonical ensemble. Due to lack of the underlying Ising symmetry, the analysis cannot be done reliably by the standard methods applicable to lattice systems. In contrast, the analysis based on the flowgram method allowed us to find the critical point to significantly higher (and controllable) accuracy than in previous studies by other authors. Simulations were performed in a progression of sizes L up to size L = 84 , with the particle numbers varying over 3 orders of magnitude and the subcritical behavior not extending beyond L = 10 - 15 . The finite size scaling analysis of the critical exponents and their ratio, μ and γ / ν , gives values consistent with the 2D Ising universality class within 1-2% of errors. Our result essentially closes proposals that the nature of the liquid-gas transition might be different from the Ising model in systems with short-range interactions. This work was supported by the NSF Grant PHY1314469.

  7. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    DOE PAGESBeta

    Anasori, Babak; Shi, Chenyang; Moon, Eun Ju; Xie, Yu; Voigt, Cooper A.; Kent, Paul R. C.; May, Steven J.; Billinge, Simon J. L.; Barsoum, Michel W.; Gogotsi, Yury

    2016-02-24

    In this paper, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M'2M"C2 and M'2M"2C3 – where M' and M" are two different early transition metals, such as Mo, Cr, Ta, Nb, V, andmore » Ti. The M' atoms only occupy the outer layers and the M" atoms fill the middle layers. In other words, M' atomic layers sandwich the middle M"–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. Finally, this finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.« less

  8. Dynamic Linkages Between the Transition Zone & Surface Plate Motions in 2D Models of Subduction

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2012-12-01

    Descending subducted slabs affect both plate tectonics at the surface and overall mantle flow (e.g. Conrad and Lithgow-Bertelloni, 2002). For time-dependent numerical models, the potential evolution of these slabs, ranging from immediate penetration into the lower mantle to prior buckling and stagnation, are affected by parameters such as the plate age, the viscosity jump into the lower mantle, the presence of phase transitions, trench motion and the chosen governing equation approximation (e.g. Billen and Hirth, 2007). Similarly, the overall deviatoric stress within the slab, especially where modified by the phase transitions, may explain the uneven distribution of deep earthquakes with depth (e.g. Bina, 1997). Better understanding of these processes may arise from a more realistic 2-D model that is fully-dynamic, with an overriding plate, freely-moving trench, compositionally-layered slab and seven major phase transitions, in addition to using the compressible (TALA) form of the governing equations. Though the thermodynamic parameters of certain phase transitions may be uncertain, this study aims to test the latest data and encourage further mineralogical research. We will present fully-dynamic models, which explore the importance of the phase transitions, especially those that have been previously excluded such as the wadsleyite to ringwoodite and the pyroxene and garnet phase transitions. These phase transitions, coupled with the modeled compositionally distinct crust, harzburgite, and pyrolite lithosphere layers, may produce new large-scale dynamic behavior not seen in past numerical models, as well as stress variations within the slab related to deep slab seismicity. Feedback from the compositionally complex slab to the dynamic trench may provide further insight on the mechanics of slab stagnation and behavior in the upper and lower mantle. Billen, M. I., and G. Hirth, Rheologic controls on slab dynamics, Geochemistry, Geophysics and Geosystems, 8 (Q08012

  9. Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

    PubMed

    Shang, Jingzhi; Shen, Xiaonan; Cong, Chunxiao; Peimyoo, Namphung; Cao, Bingchen; Eginligil, Mustafa; Yu, Ting

    2015-01-27

    Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenide monolayers (TMD 1Ls), have attracted increasing attention owing to the underlying fundamental physics (e.g., many body effects) and the promising optoelectronic applications such as light-emitting diodes. Though much progress has been made, intrinsic excitonic states of TMD 1Ls are still highly debated in theory, which thirsts for direct experimental determination. Here, we report unconventional emission and excitonic fine structure in 1L WS2 revealed by electrical doping and photoexcitation, which reflects the interplay of exciton, trion, and other excitonic states. Tunable excitonic emission has been realized in a controllable manner via electrical and/or optical injection of charge carriers. Remarkably enough, the superlinear (i.e., quadratic) emission is unambiguously observed which is attributed to biexciton states, indicating the strong Coulomb interactions in such a 2D material. In a nearly neutral 1L WS2, trions and biexcitons possess large binding energies of ∼ 10-15 and 45 meV, respectively. Moreover, our finding of electrically induced robust emission opens up a possibility to boost the luminous efficiency of emerging 1L TMD light emitting diodes. PMID:25560634

  10. Correlating Structural and Electronic Degrees of Freedom in 2D Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Tung, I.-Cheng; Zhang, Z.; Seyler, K. L.; Jones, A. M.; Clark, G.; Xiao, D.; Laanait, N.; Xu, X.; Wen, H.

    We have conducted a microscopic study of the interplay between structural and electronic degrees of freedom in two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers, multilayers and heterostructures. Using the recently developed full field x-ray reflection interface microscopy with the photoluminescence microscopic probe capability at the Advanced Photon Source, we demonstrated the x-ray reflection imaging of a monolayer 2D material for the first time. The structural variation across an exfoliated WSe2 monolayer is quantified by interlayer spacing relative to the crystal substrate and the smoothness of the layer. This structural information is correlated with the electronic properties of TMDs characterized by the in-situ photoluminescence measurements. This work is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-SC0012509. The use of Advanced Photon Source is supported by U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11357.

  11. 2D Transition-Metal-Dichalcogenide-Nanosheet-Based Composites for Photocatalytic and Electrocatalytic Hydrogen Evolution Reactions.

    PubMed

    Lu, Qipeng; Yu, Yifu; Ma, Qinglang; Chen, Bo; Zhang, Hua

    2016-03-01

    Hydrogen (H2) is one of the most important clean and renewable energy sources for future energy sustainability. Nowadays, photocatalytic and electrocatalytic hydrogen evolution reactions (HERs) from water splitting are considered as two of the most efficient methods to convert sustainable energy to the clean energy carrier, H2. Catalysts based on transition metal dichalcogenides (TMDs) are recognized as greatly promising substitutes for noble-metal-based catalysts for HER. The photocatalytic and electrocatalytic activities of TMD nanosheets for the HER can be further improved after hybridization with many kinds of nanomaterials, such as metals, oxides, sulfides, and carbon materials, through different methods including the in situ reduction method, the hot-injection method, the heating-up method, the hydro(solvo)thermal method, chemical vapor deposition (CVD), and thermal annealing. Here, recent progress in photocatalytic and electrocatalytic HERs using 2D TMD-based composites as catalysts is discussed. PMID:26676800

  12. Critical Exponents of Dynamical Conductivity in 2D Percolative Superconductor-Insulator Transitions: Three Universality Classes

    NASA Astrophysics Data System (ADS)

    Karki, Pragalv; Loh, Yen Lee

    We simulate three types of random inductor-capacitor (LC) networks on 4000x4000 lattices. We calculate the dynamical conductivity using an equation-of-motion method in which timestep error is eliminated and windowing error is minimized. We extract the critical exponent a such that σ (ω) ~ω-a at low frequencies. The results suggest that there are three different universality classes. The LijCi model, with capacitances from each site to ground, has a = 0 . 32 . The LijCij model, with capacitances along bonds, has a = 0 . The LijCiCij model, with both types of capacitances, has a = 0 . 30 . This implies that classical percolative 2D superconductor-insulator transitions (SITs) generically have σ (ω) --> ∞ as ω --> 0 . Therefore, experiments that give a constant conductivity as ω --> 0 must be explained in terms of quantum effects.

  13. Local electronic structures and 2D topological phase transition of ultrathin Sb films

    NASA Astrophysics Data System (ADS)

    Kim, Sunghwan; Jin, Kyung-Hwan; Park, Joonbum; Kim, Jun Sung; Jhi, Seung-Hoon; Yeom, Han Woong

    We investigate local electronic structures of ultrathin Sb islands and their edges grown on Bi2Te2Se by scanning tunneling microscopy/spectroscopy (STM/STS) and density functional theory (DFT) calculations. The Sb islands of various thickness are grown with atomically well ordered edge structure over the 3 bilayers (BL). On the surfaces and edges of these islands, we clearly resolve edge-localized electronic states by STS measurements, which depend on the thickness. The DFT calculations identify that the strongly localized edge states of 4 and 5 BL films correspond to a quantum spin Hall (QSH) states while the edge states of 3 BL are trivial. Our experimental and theoretical results confirm the 2D topological phase transition of the ultrathin Sb films from trivial to QSH phase. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science and Department of Physics, Pohang University of Science and Technology, Korea.

  14. Quantum Magnetic Oscillations of the Surface Tension at a Metal-Insulator Interface

    NASA Astrophysics Data System (ADS)

    Dubovskii, L. B.

    2016-03-01

    Any metal-insulator transition (MI transition) in a crystalline material must be a transition from a situation in which electronic bands overlap to a situation when they do not (Mott, Metal-insulator, 2nd edn. Taylor@Francis, London, 1990). For this case the self-consistent equations for the two-band conductor are formulated (cf. Dubovskii, JETP Lett. 99(1):22-26, 2014). The description of the MI phase transition is based on two order parameters. The first one is the material density distribution at the MI boundary ρ ({vec {r}}). The second one is a four-component complex vector in spin space Upsilon ({vec {r}}). The value Upsilon ({vec {r}}) determines the electron density in the metallic or semimetallic phase in the presence of an external magnetic field. Two different components of the vector describe possible spin states of electrons and holes inserted in the external magnetic field. The solution gives a singular behavior of the surface tension at the MI interface in the vicinity of the MI phase transition. At low temperature quantum oscillations of the surface tension in the magnetic field take place.

  15. Analysis of the antiferromagnetic phase transitions of the 2D Kondo lattice

    NASA Astrophysics Data System (ADS)

    Jones, Barbara

    2010-03-01

    The Kondo lattice continues to present an interesting and relevant challenge, with its interactions between Kondo, RKKY, and coherent order. We present our study[1] of the antiferromagnetic quantum phase transitions of a 2D Kondo-Heisenberg square lattice. Starting from the nonlinear sigma model as a model of antiferromagnetism, we carry out a renormalization group analysis of the competing Kondo-RKKY interaction to one-loop order in an ɛ-expansion. We find a new quantum critical point (QCP) strongly affected by Kondo fluctuations. Near this QCP, there is a breakdown of hydrodynamic behavior, and the spin waves are logarithmically frozen out. The renormalization group results allow us to propose a new phase diagram near the antiferromagnetic fixed point of this 2D Kondo lattice model. The T=0 phase diagram contains four phases separated by a tetracritical point, the new QCP. For small spin fluctuations, we find a stable local magnetic moment antiferromagnet. For stronger coupling, region II is a metallic quantum disordered paramagnet. We find in region III a paramagnetic phase driven by Kondo interactions, with possible ground states of a heavy fermion liquid or a Kondo driven spin-liquid. The fourth phase is a spiral phase, or a large-Fermi-surface antiferromagnetic phase. We will describe these phases in more detail, including possible experimental confirmation of the spiral phase. The existence of the tetracritical point found here would be expected to affect the phase diagram at finite temperatures as well. In addition, It is hoped that these results, and particularly the Kondo interaction paramagnetic phase, will serve to bridge to solutions starting from the opposite limit, of a Kondo effect leading to a heavy fermion ground state. Work in collaboration with T. Tzen Ong. [4pt] [1] T. Ong and B. A. Jones, Phys. Rev. Lett. 103, 066405 (2009).

  16. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  17. Theoretical transition probabilities between the lowest 2S, 2P and 2D states of Na, K, Rb and Cs

    NASA Technical Reports Server (NTRS)

    Langhoff, S. R.; Bauschlicher, C. W., Jr.; Partridge, H.

    1985-01-01

    Theoretical transition probabilities between the lowest 2S, 2P and 2D states of the alkali atoms Na through Cs have been computed using near Hartree-Fock quality Slater basis sets. The important core-valence correlation effects are incorporated explicitly by a configuration-interaction procedure. For Cs, the calculations were repeated using a Gaussian basis set so that relativistic effects could be incorporated through an effective core potential procedure. The best calculated electric quadrupole Einstein coefficients are Na(196.3/s), K(103.6/s), Rb(72.4/s) and Cs(19.7/s). Core-valence effects become increasingly important down the column, and reduce the quadrupole transition strengths to about the same degree as for the 2P-2S and 2D-2P dipole-allowed transitions. Relativistic effects increase the quadrupole moment of Cs, but less so than in Ba, presumably because the alkali 2D states are more diffuse.

  18. Nonpercolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1 -xCaxMnO3

    NASA Astrophysics Data System (ADS)

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-01

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x =0.18 ,0.22 ). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS˜720 K. The study utilized explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1 -xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ˜1 nm with observably smaller distortions. In the x =0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ˜1050 K), where they are crystallographically prohibited. Their magnitude and subnanometer spatial extent remain unchanged.

  19. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  20. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    DOE PAGESBeta

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilizedmore » explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  1. A 2D homochiral inorganic-organic framework exhibiting a spin-flop transition.

    PubMed

    Li, Wei; Barton, Phillip T; Burwood, Ryan P; Cheetham, Anthony K

    2011-07-21

    A 2D homochiral inorganic-organic framework {[Mn(NPTA)(4,4'-bpy)(H(2)O)]·(H(2)O)(2)}(n) was prepared by assembling achiral polar 4-nitrophthalic acid, manganese ions, and ancillary 4,4'-bipyridine ligands (NPTA = 4-nitrophthalate) (4,4'-bpy = 4,4'-bipyridine). The isomorphous Zn(ii) compound was also prepared as a diamagnetic analogue. Adjacent manganese spin centres are linked by the syn-anti carboxylate to form a helical chain, and chains of the same chirality are connected by 4,4'-bpy ligands to generate a homochiral layered framework. Edge-to-face aromatic interactions between neighboring layers lead to a 3D homochiral supramolecular structure. Magnetization and heat capacity measurements indicate that the framework is a weak antiferromagnet at low applied field. The magnetic interactions between adjacent manganese ions in the helical chain can be fitted using the 1D Fisher model, with 2J/k = -0.68 K and g = 2.00. Moreover, the compound displays a unique field-dependent spin-flop transition in high magnetic fields, with a critical field of 23.6 kOe at 1.9 K. PMID:21373656

  2. Imaging geological contact utilizing 2D resistivity method for light rail transit (LRT) track alignment

    NASA Astrophysics Data System (ADS)

    Ali, Nisa'; Saad, Rosli; Muztaza, Nordiana M.; Ismail, Noer E. H.

    2013-05-01

    The purpose of this study was to locate the geological contact using 2D resistivity method for Light Rail Transit (LRT) track alignment. The resistivity method was conducted on eight survey lines with the length of line 1 was 600m. The length of line 2, 3, 4, 5, 6, and 7 were 200m each while line 8 is 115m. All the survey used minimum electrode spacing of 5m and using Pole-dipole array with minimum current is 2mA and maximum was 20mA. The result obtained from the pseudosection showed that the area generally divided into three main zones, fill materials/residual soil with a resistivity value of <500 Ωm, saturated zone with a resistivity value of 30-100 Ωm and bedrock with a resistivity value of >2000 Ωm. Three fractured zones were detected along line L1 and a lot of boulders were detected at L1, L3, L4, L5 and L6. The geological contact was between the residual soil and granite bedrock.

  3. Critical thickness of 2D to 3D transition in GexSi1-x/Si(001) system

    NASA Astrophysics Data System (ADS)

    Lozovoy, K. A.; Kokhanenko, A. P.; Voitsekhovskii, A. V.

    2016-07-01

    In this paper, Stranski-Krastanov growth of GexSi1-x epitaxial layers on the Si(001) surface is considered. Experimental investigations show that the moment of transition from 2D to 3D growth and the critical thickness of 2D layer at which this transition occurs play a key role during the synthesis of such materials. Among the most important parameters determining the peculiarities of the growth process and characteristics of emerging island ensembles are growth temperature and surface conditions (for example, the presence of surfactants). But existing theoretical models are not able to predict the values of the critical thickness in the whole range of growth temperatures and compositions x of solution for these systems. For the calculations of the critical thickness of transition from 2D to 3D growth, in this paper, a theoretical model based on general nucleation theory is proposed. This model is specified by taking into account dependencies of elastic modulus, lattices mismatch, and surface energy of the side facet on the composition x. As a result, dependencies of the critical thickness of Stranski-Krastanov transition on composition x and temperature are obtained. This allows one to determine conditions of transition from 2D to 3D growth mode in these systems. The simulated results explain experimentally observed results on temperature dependencies of the critical thickness for different germanium contents.

  4. Uniaxial pressure effect of Metal-Insulator Transition (TMI) in oriented Sm0.55(Sr0.5Ca0.5)0.45MnO3

    NASA Astrophysics Data System (ADS)

    Arumugam, Sonachalam; Mohan Radheep, D.; Sarkar, P.; Mandal, P.; Arumugam Team; Prabhat Mandal Collaboration

    2013-06-01

    Perovskite type manganites R1 - xAxMnO3 (R: rare earth ions, A: alkaline earth ions) exhibit various fundamental phenomena like colossal magnetoresistance (CMR), phase separation, and first-order ferromagnetic (FM) to paramagnetic (PM) phase transition etc. Similar to CMR, piezoresistance (PR), the change in electrical resistance in response to external pressure, can also be important parameter for various technological applications. Several studies shows that the order of phase transition can be changed either by applying external perturbations like magnetic field, pressure (P) , etc. or internally like doping etc. SSCMO single crystal was grown using floating zone technique and the quality was carefully checked and aligned along the c axis as well as ab-plane. We have investigated the effect of uniaxial pressure (P) on electrical resistivity along the ab-plane and c - axis in a single crystal of SSCMO. A huge PR ~107 % at P = 90 MPa and a remarkable increase (~79 K/GPa) of TMI have been observed with the application of P || c - axis, while TMI decreases at the rate of ~77 K/GPa for P⊥ c axis. These values of PR and dTMI /dP are much larger than those observed in other perovskite and bilayer manganites. Hence, these materials may be used for various technological applications. The authors SA and DMR wishes to thank DST, UGC and CSIR-SRF scheme (India) for the financial support to carry out the research work.

  5. All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

    PubMed Central

    Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

    2014-01-01

    Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10 nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5 nm can achieve forward-to-reverse current rectification ratios exceeding 5000. PMID:24496307

  6. Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

    NASA Astrophysics Data System (ADS)

    Vilan, Ayelet

    2016-01-01

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

  7. Generalized Mechanistic Model for the Chemical Vapor Deposition of 2D Transition Metal Dichalcogenide Monolayers.

    PubMed

    Govind Rajan, Ananth; Warner, Jamie H; Blankschtein, Daniel; Strano, Michael S

    2016-04-26

    Transition metal dichalcogenides (TMDs) like molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are layered materials capable of growth to one monolayer thickness via chemical vapor deposition (CVD). Such CVD methods, while powerful, are notoriously difficult to extend across different reactor types and conditions, with subtle variations often confounding reproducibility, particularly for 2D TMD growth. In this work, we formulate the first generalized TMD synthetic theory by constructing a thermodynamic and kinetic growth mechanism linked to CVD reactor parameters that is predictive of specific geometric shape, size, and aspect ratio from triangular to hexagonal growth, depending on specific CVD reactor conditions. We validate our model using experimental data from Wang et al. (Chem. Mater. 2014, 26, 6371-6379) that demonstrate the systemic evolution of MoS2 morphology down the length of a flow CVD reactor where variations in gas phase concentrations can be accurately estimated using a transport model (CSulfur = 9-965 μmol/m(3); CMoO3 = 15-16 mmol/m(3)) under otherwise isothermal conditions (700 °C). A stochastic model which utilizes a site-dependent activation energy barrier based on the intrinsic TMD bond energies and a series of Evans-Polanyi relations leads to remarkable, quantitative agreement with both shape and size evolution along the reactor. The model is shown to extend to the growth of WS2 at 800 °C and MoS2 under varied process conditions. Finally, a simplified theory is developed to translate the model into a "kinetic phase diagram" of the growth process. The predictive capability of this model and its extension to other TMD systems promise to significantly increase the controlled synthesis of such materials. PMID:26937889

  8. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhan, J. M.; Li, P. G.; Liu, H.; Tao, S. L.; Ma, H.; Shen, J. Q.; Pan, M. J.; Zhang, Z. J.; Wang, S. L.; Yuan, G. L.

    2016-04-01

    La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

  9. Measurements of Thermal Conductivity of Superfluid Helium Near its Transition Temperature T(sub lambda) in a 2D Confinement

    NASA Technical Reports Server (NTRS)

    Jerebets, Sergei

    2004-01-01

    We report our recent experiments on thermal conductivity measurements of superfluid He-4 near its phase transition in a two-dimensional (2D) confinement under saturated vapor pressure. A 2D confinement is created by 2-mm- and 1-mm-thick glass capillary plates, consisting of densely populated parallel microchannels with cross-sections of 5 x 50 and 1 x 10 microns, correspondingly. A heat current (2 < Q < 400 nW/sq cm) was applied along the channels long direction. High-resolution measurements were provided by DC SQUID-based high-resolution paramagnetic salt thermometers (HRTs) with a nanokelvin resolution. We might find that thermal conductivity of confined helium is finite at the bulk superfluid transition temperature. Our 2D results will be compared with those in a bulk and 1D confinement.

  10. Ground-state tuning of metal-insulator transition by compositional variations in BaI r1 -xR uxO3(0 ≤x ≤1 )

    NASA Astrophysics Data System (ADS)

    Yuan, S. J.; Butrouna, K.; Terzic, J.; Zheng, H.; Aswartham, S.; DeLong, L. E.; Ye, Feng; Schlottmann, P.; Cao, G.

    2016-04-01

    Hexagonal BaIr O3 is a magnetic insulator driven by the spin-orbit interaction (SOI), whereas BaRu O3 is an enhanced paramagnetic metal. Our investigation of structural, magnetic, transport, and thermal properties reveals that substitution of R u4 + (4 d4 ) ions for I r4 + (5 d5 ) ions in BaIr O3 reduces the magnitudes of the SOI and a monoclinic structural distortion and rebalances the competition between the SOI and the lattice degrees of freedom to render an evolution from a magnetic insulting state to a robust metallic state. The central findings of this paper are as follows: (1) light Ru doping (0 transition-metal oxides.

  11. Analytical description of 2D magnetic Freedericksz transition in a rectangular cell of a nematic liquid crystal.

    PubMed

    Burylov, S V; Zakhlevnykh, A N

    2016-06-01

    We study the Freedericksz transition induced by a magnetic field in a rectangular cell filled with a nematic liquid crystal. In the initial state the director of the nematic liquid crystal is uniformly aligned in the cross section plane of the cell with rigid anchoring of the director at cell walls: planar on the top and bottom walls, and homeotropic on the left and right ones. The magnetic field is directed perpendicular to the cell cross section plane. We consider two-dimensional (2D) orientational deformations of the nematic liquid crystal in the rectangular cell and determine the critical value of the Freedericksz transition field above which these orientational deformations occur. The 2D expression for the director alignment profile above the threshold of Freedericksz transition is analytically found and the profile shapes as functions of cell sizes, values of the Frank elastic constants of the nematic liquid crystal and the magnetic field are studied. PMID:27349554

  12. On the 2D-transition, hysteresis and thermodynamic equilibrium of Kr adsorption on a graphite surface.

    PubMed

    Diao, Rui; Fan, Chunyan; Do, D D; Nicholson, D

    2015-12-15

    The adsorption and desorption of Kr on graphite at temperatures in the range 60-88K, was systematically investigated using a combination of several simulation techniques including: Grand Canonical Monte Carlo (GCMC), Canonical kinetic-Monte Carlo (C-kMC) and the Mid-Density Scheme (MDS). Particular emphasis was placed on the gas-solid, gas-liquid and liquid-solid 2D phase transitions. For temperatures below the bulk triple point, the transition from a 2D-liquid-like monolayer to a 2D-solid-like state is manifested as a sub-step in the isotherm. A further increase in the chemical potential leads to another rearrangement of the 2D-solid-like state from a disordered structure to an ordered structure that is signalled by (1) another sub-step in the monolayer region and (2) a spike in the plot of the isosteric heat versus density at loadings close to the dense monolayer coverage concentration. Whenever a 2D transition occurs in a grand canonical isotherm it is always associated with a hysteresis, a feature that is not widely recognised in the literature. We studied in details this hysteresis with the analysis of the canonical isotherm, obtained with C-kMC, which exhibits a van der Waals (vdW) type loop with a vertical segment in the middle. We complemented the hysteresis loop and the vdW curve with the analysis of the equilibrium transition obtained with the MDS, and found that the equilibrium transition coincides exactly with the vertical segment of the C-kMC isotherm, indicating the co-existence of two phases at equilibrium. We also analysed adsorption at higher layers and found that the 2D-coexistence is also observed, provided that the temperature is well below the triple point. Finally the 2D-critical temperatures were obtained for the first three layers and they are in good agreement with the experimental data in the literature. PMID:26364074

  13. Quantum Diffusion on Molecular Tubes: Universal Scaling of the 1D to 2D Transition

    NASA Astrophysics Data System (ADS)

    Chuang, Chern; Lee, Chee Kong; Moix, Jeremy M.; Knoester, Jasper; Cao, Jianshu

    2016-05-01

    The transport properties of disordered systems are known to depend critically on dimensionality. We study the diffusion coefficient of a quantum particle confined to a lattice on the surface of a tube, where it scales between the 1D and 2D limits. It is found that the scaling relation is universal and independent of the temperature, disorder, and noise parameters, and the essential order parameter is the ratio between the localization length in 2D and the circumference of the tube. Phenomenological and quantitative expressions for transport properties as functions of disorder and noise are obtained and applied to real systems: In the natural chlorosomes found in light-harvesting bacteria the exciton transfer dynamics is predicted to be in the 2D limit, whereas a family of synthetic molecular aggregates is found to be in the homogeneous limit and is independent of dimensionality.

  14. Quantum Diffusion on Molecular Tubes: Universal Scaling of the 1D to 2D Transition.

    PubMed

    Chuang, Chern; Lee, Chee Kong; Moix, Jeremy M; Knoester, Jasper; Cao, Jianshu

    2016-05-13

    The transport properties of disordered systems are known to depend critically on dimensionality. We study the diffusion coefficient of a quantum particle confined to a lattice on the surface of a tube, where it scales between the 1D and 2D limits. It is found that the scaling relation is universal and independent of the temperature, disorder, and noise parameters, and the essential order parameter is the ratio between the localization length in 2D and the circumference of the tube. Phenomenological and quantitative expressions for transport properties as functions of disorder and noise are obtained and applied to real systems: In the natural chlorosomes found in light-harvesting bacteria the exciton transfer dynamics is predicted to be in the 2D limit, whereas a family of synthetic molecular aggregates is found to be in the homogeneous limit and is independent of dimensionality. PMID:27232033

  15. Metal-insulator transitions, structural and microstructural evolution of RNiO{sub 3} (R = Sm, Eu, Gd, Dy, Ho, Y) perovskites: Evidence for room-temperature charge disproportionation in monoclinic HoNiO{sub 3} and YNiO{sub 3}

    SciTech Connect

    Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.; Arangda, M.A.G.; Fernandez-Diaz, M.T.

    1999-05-26

    RNiO{sub 3} nickelates have been prepared under high oxygen pressure (R = Sm, Eu, Gd) or high hydrostatic pressure (R = Dy, Ho, Y) in the presence of KClO{sub 4}. The samples have been investigated at room temperature (RT) by synchrotron X-ray powder diffraction to follow the evolution of the crystal structures and microstructures along the series. The distortion of the orthorhombic (space group Pbnm) perovskite progressively increases along the series, leading for the smallest Ho{sup 3+} and Y{sup 3+} cations to a subtle monoclinic distortion (space group P2{sub 1}/n) which implies the splitting of the Ni positions in the crystal. This symmetry was confirmed by neutron powder diffraction; the crystal structures for R = Ho and Y were refined simultaneously from RT synchrotron and neutron powder diffraction data. In both perovskites the oxygen octahedra around Ni1 and Ni2 positions are significantly distorted, suggesting the manifestation of Jahn-Teller effect, which is almost absent in the nickelates` of lighter rare earths. The very distinct mean Ni-O bond distances observed for Ni1 and Ni2 atoms at RT, in the insulating regime, suggest the presence of a charge disproportionation effect, considered as driving force for the splitting of the Ni positions. The metal-insulator (MI) transitions for RNiO{sub 3} (R = Gd, Dy, Ho, Y), above room temperature, have been characterized by DSC. The transition temperatures for Gd, Dy, Ho, and Y oxides in the heating runs are 510.7, 563.9, 572.7, and 581.9 K, respectively. The increasing rate of T{sub MI} for Dy, Ho, and Y materials is lower than that expected from the variation of T{sub MI} for the larger rare earth perovskites. This is probably related to the subtle monoclinic distortion found for Ho and Y nickelates. The high-resolution synchrotron X-ray powder patterns have revealed changes in the microstructure along the series. Powder patterns for orthorhombic RNiO{sub 3} (R = Sm, Eu, Gd, Dy) display asymmetric tails for

  16. Mott metal-insulator transition on compressible lattices.

    PubMed

    Zacharias, Mario; Bartosch, Lorenz; Garst, Markus

    2012-10-26

    The critical properties of the finite temperature Mott end point are drastically altered by a coupling to crystal elasticity, i.e., whenever it is amenable to pressure tuning. Similar as for critical piezoelectric ferroelectrics, the Ising criticality of the electronic system is preempted by an isostructural instability, and long-range shear forces suppress microscopic fluctuations. As a result, the end point is governed by Landau criticality. Its hallmark is, thus, a breakdown of Hooke's law of elasticity with a nonlinear strain-stress relation characterized by a mean-field exponent. Based on a quantitative estimate, we predict critical elasticity to dominate the temperature range ΔT*/T(c)≃8%, close to the Mott end point of κ-(BEDT-TTF)(2)X. PMID:23215206

  17. Low-voltage current noise in long quantum superconductor/insulator/normal-metal/insulator/superconductor junctions.

    SciTech Connect

    Kopnin, N. B.; Galperin, Y. M.; Vinokur, V.; Materials Science Division; Helsinki Univ. Tech.; L.D. Landau Inst. for Theoretical Physics; Univ. Oslo; A.F. Ioffe Physico-Tech. Inst. of Russian Academy of Sciences

    2007-01-01

    The current noise in long superconductor/insulator/normal-metal/insulator/superconductor junctions at low temperatures is sensitive to the population of the subgap states, which is far from equilibrium even at low bias voltages. A nonequilibrium distribution is established due to an interplay between voltage-driven interlevel Landau-Zener transitions and intralevel inelastic relaxation. The Fano factor (the ratio of the zero-frequency noise to the dc current) is enhanced drastically, being proportional to the number of times which a particle flies along the Andreev trajectory before it escapes from the level due to inelastic scattering. For weak Landau-Zener transitions, the enhancement is even larger due to a smaller dc current.

  18. Simulation of multi-steps thermal transition in 2D spin-crossover nanoparticles

    NASA Astrophysics Data System (ADS)

    Jureschi, Catalin-Maricel; Pottier, Benjamin-Louis; Linares, Jorge; Richard Dahoo, Pierre; Alayli, Yasser; Rotaru, Aurelian

    2016-04-01

    We have used an Ising like model to study the thermal behavior of a 2D spin crossover (SCO) system embedded in a matrix. The interaction parameter between edge SCO molecules and its local environment was included in the standard Ising like model as an additional term. The influence of the system's size and the ratio between the number of edge molecules and the other molecules were also discussed.

  19. Surface polaritons of a metal-insulator-metal curved slab

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2016-09-01

    The properties of s- and p-polarized surface polariton modes propagating circumferentially around a portion of a cylindrical metal-insulator-metal structure are studied, theoretically. By using the Maxwell equations in conjunction with the Drude model for the dielectric function of the metals and applying the appropriate boundary conditions, the dispersion relations of surface waves for two types of modes, are derived and numerically solved. The effects of the slab curvature and insulator thickness on the propagation of electromagnetic modes are investigated. The differences of the s- and p-polarized surface modes are also shown.

  20. SU-E-T-05: A 2D EPID Transit Dosimetry Model Based On An Empirical Quadratic Formalism

    SciTech Connect

    Tan, Y; Metwaly, M; Glegg, M; Baggarley, S; Elliott, A

    2014-06-01

    Purpose: To describe a 2D electronic portal imaging device (EPID) transit dosimetry model, based on an empirical quadratic formalism, that can predict either EPID or in-phantom dose distribution for comparisons with EPID captured image or treatment planning system (TPS) dose respectively. Methods: A quadratic equation can be used to relate the reduction in intensity of an exit beam to the equivalent path length of the attenuator. The calibration involved deriving coefficients from a set of dose planes measured for homogeneous phantoms with known thicknesses under reference conditions. In this study, calibration dose planes were measured with EPID and ionisation chamber (IC) in water for the same reference beam (6MV, 100mu, 20×20cm{sup 2}) and set of thicknesses (0–30cm). Since the same calibration conditions were used, the EPID and IC measurements can be related through the quadratic equation. Consequently, EPID transit dose can be predicted from TPS exported dose planes and in-phantom dose can be predicted using EPID distribution captured during treatment as an input. The model was tested with 4 open fields, 6 wedge fields, and 7 IMRT fields on homogeneous and heterogeneous phantoms. Comparisons were done using 2D absolute gamma (3%/3mm) and results were validated against measurements with a commercial 2D array device. Results: The gamma pass rates for comparisons between EPID measured and predicted ranged from 93.6% to 100.0% for all fields and phantoms tested. Results from this study agreed with 2D array measurements to within 3.1%. Meanwhile, comparisons in-phantom between TPS computed and predicted ranged from 91.6% to 100.0%. Validation with 2D array device was not possible for inphantom comparisons. Conclusion: A 2D EPID transit dosimetry model for treatment verification was described and proven to be accurate. The model has the advantage of being generic and allows comparisons at the EPID plane as well as multiple planes in-phantom.

  1. Electronic band structure and charge density wave transition in quasi-2D KMo6O17 purple bronze

    NASA Astrophysics Data System (ADS)

    Valbuena, M. A.; Avila, J.; Vyalikh, D. V.; Guyot, H.; Laubschat, C.; Molodtsov, S. L.; Asensio, M. C.

    2008-03-01

    High resolution angle-resolved photoemission of quasi-2D KMo6O17 purple bronze has been performed in the range from room temperature to 130 K, slightly above the charge density wave (CDW) transition (Tc = 110 K), and down to 35 K (well below Tc). In this paper we report a detailed study of how electronic band structure is affected by this transition driven by the hidden nesting scenario. The expected spectroscopic fingerprints of the CDW phase transition have been found and discussed according to the hidden one dimension and the development of a quasi-commensurate CDW. The excellent agreement between theory and our experimental results makes of potassium purple bronze a reference system for studying this type of instabilities.

  2. Photocurrent measurements in Coupled Quantum Well van der Waals Heterostructures made of 2D Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Joe, Andrew; Jauregui, Luis; High, Alex; Dibos, Alan; Gulpinar, Elgin; Pistunova, Kateryna; Park, Hongkun; Kim, Philip

    , Luis A. Jauregui, Alex A. High, Alan Dibos, Elgin Gulpinar, Kateryna Pistunova, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors van der Waals (vdW) characterized by a direct optical bandgap in the visible wavelength (~2 eV). Characterization of the band alignment between TMDC and the barrier is important for the fabrication of tunneling devices. Here, we fabricate coupled quantum well (CQW) heterostructures made of 2D TMDCs with hexagonal Boron nitride (hBN) as an atomically thin barrier and gate dielectric and with top and bottom metal (or graphite) as gate electrodes. We observe a clear dependence of the photo-generated current with varying hBN thickness, electrode workfunctions, electric field, laser excitation power, excitation wavelength, and temperature. We will discuss the implication of photocurrent in relation to quantum transport process across the vdW interfaces.

  3. Spectroscopic Investigation of the Odd-Parity 3 d 2 D → nf 2 F Transitions of Neutral Sodium

    NASA Astrophysics Data System (ADS)

    Nadeem, A.; Shah, M.; Shahzada, S.; Ahmed, M.; Haq, S. U.

    2015-11-01

    We report new experimental data on term energies and effective quantum numbers of the odd parity Rydberg states of sodium in the 40687-41408 cm-1 energy range. The experiment was performed using a two-color scheme of three-photon laser excitation in conjunction with a thermionic diode ion detector. The new observation includes much extended nf 2 F (12 ≤ n ≤ 51) series excited from the 3 d 2 D intermediate state. In addition, oscillator strengths of the 3 d 2 D → nf 2 F (16 ≤ n ≤ 45) Rydberg transitions have been determined and a complete picture is presented from n = 4-45 incorporating the present work and earlier computed results.

  4. 2D transition-metal diselenides: phase segregation, electronic structure, and magnetism.

    PubMed

    Manchanda, Priyanka; Skomski, Ralph

    2016-02-17

    Density-functional theory is used to investigate the phase-segregation behavior of two-dimensional transition-metal dichalcogenides, which are of current interest as beyond-graphene materials for optoelectronic and spintronic applications. Our focus is on the behavior of W1-x V x Se2 monolayers, whose end members are semiconducting WSe2 and ferromagnetic VSe2. The energetics favors phase segregation, but the spinodal decomposition temperature is rather low, about 420 K. The addition of V leads to a transition from a nonmagnetic semiconductor to a metallic ferromagnet, with a ferromagnetic moment of about 1.0 μ B per V atom. The transition is caused by a p-type doping mechanism, which shifts the Fermi level into the valence band. The finite-temperature structure and magnetism of the diselenide systems are discussed in terms of Onsager-type critical fluctuations and Bruggeman effective-medium behavior. PMID:26794410

  5. 2D transition-metal diselenides: phase segregation, electronic structure, and magnetism

    NASA Astrophysics Data System (ADS)

    Manchanda, Priyanka; Skomski, Ralph

    2016-02-01

    Density-functional theory is used to investigate the phase-segregation behavior of two-dimensional transition-metal dichalcogenides, which are of current interest as beyond-graphene materials for optoelectronic and spintronic applications. Our focus is on the behavior of W1-x V x Se2 monolayers, whose end members are semiconducting WSe2 and ferromagnetic VSe2. The energetics favors phase segregation, but the spinodal decomposition temperature is rather low, about 420 K. The addition of V leads to a transition from a nonmagnetic semiconductor to a metallic ferromagnet, with a ferromagnetic moment of about 1.0 μ B per V atom. The transition is caused by a p-type doping mechanism, which shifts the Fermi level into the valence band. The finite-temperature structure and magnetism of the diselenide systems are discussed in terms of Onsager-type critical fluctuations and Bruggeman effective-medium behavior.

  6. Mid-infrared intersubband polaritons in dispersive metal-insulator-metal resonators

    SciTech Connect

    Manceau, J.-M. Ongarello, T.; Colombelli, R.; Zanotto, S.; Sorba, L.; Tredicucci, A.; Biasiol, G.

    2014-08-25

    We demonstrate room-temperature strong coupling between a mid-infrared (λ = 9.9 μm) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k = 0 where—potentially—polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and—simultaneously—to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the strong critical coupling concept is highlighted.

  7. Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

    SciTech Connect

    Chaudhuri, S.; Maasilta, I. J.

    2014-03-24

    We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

  8. Metal-insulator quantum critical point beneath the high Tc superconducting dome

    PubMed Central

    Sebastian, Suchitra E.; Harrison, N.; Altarawneh, M. M.; Mielke, C. H.; Liang, Ruixing; Bonn, D. A.; Lonzarich, G. G.; Hardy, W. N.

    2010-01-01

    An enduring question in correlated systems concerns whether superconductivity is favored at a quantum critical point (QCP) characterized by a divergent quasiparticle effective mass. Despite such a scenario being widely postulated in high Tc cuprates and invoked to explain non-Fermi liquid transport signatures, experimental evidence is lacking for a critical divergence under the superconducting dome. We use ultrastrong magnetic fields to measure quantum oscillations in underdoped YBa2Cu3O6+x, revealing a dramatic doping-dependent upturn in quasiparticle effective mass at a critical metal-insulator transition beneath the superconducting dome. Given the location of this QCP under a plateau in Tc in addition to a postulated QCP at optimal doping, we discuss the intriguing possibility of two intersecting superconducting subdomes, each centered at a critical Fermi surface instability. PMID:20304800

  9. Percolation behavior in metallic-insulator composite systems and the filling factor near the percolation threshold

    NASA Astrophysics Data System (ADS)

    Mukherjee, Rupam; Mishra, Debabrata; Huang, Zhifeng; Nadgorny, Boris

    2012-10-01

    We investigate the percolation behavior in various composite metal -- insulator systems including LiCoO2/ CrO2, MgB2/Al2O3, CrO2/Al2O3, CrO2/ CaCO3. The effect of particle size and shapes in these systems has been studied to better understand the geometrical phase transitions. The power law exponent around the percolation threshold has been found to be 2.0±0.04 in all the cases, which agrees well with the theoretical result. Interestingly, the filling factor of these composite systems also exhibits the power law dependence near the percolation threshold with the value found to be dependent on the shape of the insulating particle. The exponent ranges from 0.2 to 0.4 depending on size of particles of a given shape in the composite system.

  10. Coalescence of drops in a 2D microchannel: critical transitions to autocatalytic behaviour.

    PubMed

    Danny Raj, M; Rengaswamy, Raghunathan

    2016-01-01

    A single coalescence event in a 2D concentrated emulsion in a microchannel can trigger an avalanche of similar events that can destabilize the entire assembly of drops. The sensitive dependence of the process on numerous parameters makes the propagation dynamics appear probabilistic. In this article, a stochastic simulation framework is proposed to understand this collective behavior in a system employing a large number of drops. We discover that the coalescence propagation dynamics exhibit a critical behavior where two outcomes are favored: no avalanche and large avalanches. Our analysis reveals that this behavior is a result of the inherent autocatalytic nature of the process. The effect of the aspect ratio of the drop assembly on the propagation dynamics is studied. We generate a parametric plot that shows the region of the parameter space where the propagation, averaged over the ensemble, is autocatalytic: where the possibility of near destabilization of the drop assembly appears. PMID:26439512

  11. Dynamic Linkages Between the Transition Zone & Surface Plate Motion in 2D Models of Subduction

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2014-12-01

    Subduction zones exhibit a wide range of behavior, from slab stagnation at 660 km to direct penetration into the lower mantle. Due to uncertainties in the tectonic history of individual subduction zones, such as trench velocities, potential mechanisms for controlling slab behavior in the transition zone are explored using numerical models. Numerical simulations have utilized a range of assumptions to improve computational efficiency, such as ignoring latent heat, ignoring compositional effects or fixing the trench location: the net effect of these assumptions resulting modeled dynamics remains unclear. Additionally the eight major, composition-dependent, phase transitions for pyrolite, harzburgite and eclogite may be an important influence on subducting slab dynamics due to the additional forces that are dependent on depth and compositional layering within the slab (e.g., Ricard et al., 2005). With the goal of developing more complete, self-consistent, and less idealized simulations, we test the importance of various factors on slab behavior: the presence of shear, adiabatic and latent heating, compositional layering, composition-dependent phase transitions and explicit plate speeds versus dynamically evolving plate and trench velocities. Preliminary results indicate that individual components have a relatively minor effect, but produce large changes when combined together. The extent of slab folding and stagnation is overestimated by only modeling the 410 and 660 km phase transitions. Dynamic models with all seven composition-dependent phase transitions are very sensitive to the plate strength and weak zone viscosity, causing large changes in plate speed and slab detachment. Changes to the overriding plate buoyance and strength investigate the origin and influence of trench movement on slab deformation. These feedbacks and parameter-sensitive behavior indicate that the wide range of observed slab behavior may result from subtle differences in plate and plate

  12. Dynamic Linkages Between the Transition Zone & Surface Plate Motions in 2D Models of Subduction

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2013-12-01

    While slab pull is considered the dominant force controlling plate motion and speed, its magnitude is controlled by slab behavior in the mantle, where tomographic studies show a wide range of possibilities from direct penetration to folding, or stagnation directly above the lower mantle (e.g. Fukao et al., 2009). Geodynamic studies have investigated various parameters, such as plate age and two phase transitions, to recreate observed behavior (e.g. Běhounková and Cízková, 2008). However, past geodynamic models have left out known slab characteristics that may have a large impact on slab behavior and our understanding of subduction processes. Mineral experiments and seismic observations have indicated the existence of additional phase transitions in the mantle transition zone that may produce buoyancy forces large enough to affect the descent of a subducting slab (e.g. Ricard et al., 2005). The current study systematically tests different common assumptions used in geodynamic models: kinematic versus free-slip boundary conditions, the effects of adiabatic heating, viscous dissipation and latent heat, compositional layering and a more complete suite of phase transitions. Final models have a complete energy equation, with eclogite, harzburgite and pyrolite lithosphere compositional layers, and seven composition-dependent phase transitions within the olivine, pyroxene and garnet polymorph minerals. Results show important feedback loops between different assumptions and new behavior from the most complete models. Kinematic models show slab weakening or breaking above the 660 km boundary and between compositional layers. The behavior in dynamic models with a free-moving trench and overriding plate is compared to the more commonly found kinematic models. The new behavior may have important implications for the depth distribution of deep earthquakes within the slab. Though the thermodynamic parameters of certain phase transitions may be uncertain, their presence and

  13. Strain Engineered Direct-indirect Band Gap Transition and its Mechanism in 2D Phosphorene

    NASA Astrophysics Data System (ADS)

    Peng, Xihong; Wei, Qun; Copple, Andrew

    Phosphorene, a two-dimensional puckered honeycomb structure of black phosphorus, showed promising properties for applications in nano-electronics. In this work, we report strain effect on the electronic band structure of phosphorene, using first principles density-functional theory (DFT) including standard DFT and hybrid functional methods. It was found that phosphorene can withstand a tensile strain up to 30%. The band gap of phosphorene experiences a direct-indirect-direct transition when axial strain is applied. The origin of the gap transition was revealed and a general mechanism was developed to explain energy shifts with strain according to the bond nature of near-band-edge electronic orbitals. Effective masses of carriers in the armchair direction are an order of magnitude smaller than that of the zigzag axis indicating the armchair direction is favored for carrier transport. Ref: X.-H. Peng, Qun Wei, A. Copple, Phys. Rev. B 90, 085402 (2014).

  14. Theoretical study of surface plasmons coupling in transition metallic alloy 2D binary grating

    NASA Astrophysics Data System (ADS)

    Dhibi, Abdelhak; Khemiri, Mehdi; Oumezzine, Mohamed

    2016-05-01

    The excitation of a surface plasmon polariton (SPP) wave on a metal-air interface by a 2D diffraction grating is numerically investigated. The grating consists of homogeneous alloys of two metals of a formula AxB1-x, or three metals of a formula AxByCz, where A, B and C could be silver (Ag), copper (Cu), gold (Au) or aluminum (Al). It is observed that all the alloys of two metals present a very small change of surface plasmon resonance (SPR) irrespective of composition x. Moreover, the addition of 25% of Al to two metals alloy is insufficient to change the SPR curves. The influence of the different grating parameters is discussed in details using rigorous coupled-wave analysis (RCWA) method. Furthermore, the SPR is highly dependent on grating periods (dx and dy) and the height of the grating h. The results reveal that dx= dy= 700 nm, h=40 nm and duty cycle w=0.5 are the optimal parameters for exciting SPP.

  15. Four divalent transition metal carboxyarylphosphonate compounds: Hydrothermal synthesis, structural chemistry and generalized 2D FTIR correlation spectroscopy studies

    NASA Astrophysics Data System (ADS)

    Lei, Ran; Chai, Xiaochuan; Mei, Hongxin; Zhang, Hanhui; Chen, Yiping; Sun, Yanqiong

    2010-07-01

    Four divalent transition metal carboxyarylphosphonates, [Ni(4,4'-bipy)H 2L 1(HL 1) 2(H 2O) 2]·2H 2O 1, [Ni 2(4,4'-bipy)(L 2)(OH)(H 2O) 2]·3H 2O 2, Mn(phen) 2(H 2L 1) 23 and Mn(phen)(HL 2) 4 (H 3L 1= p-H 2O 3PCH 2-C 6H 4-COOH, H 3L 2= m-H 2O 3PCH 2-C 6H 4-COOH, 4,4'-bipy=4,4'-bipyridine, phen=1,10-phenanthroline) were synthesized under hydrothermal conditions. 1 features 1D linear chains built from Ni(II) ions bridging 4,4'-bipy. In 2, neighboring Ni 4 cluster units are connected by pairs of H 3L 2 ligands to form 1D double-crankshaft chains, which are interconnected by pairs of 4,4'-bipy into 2D sheets. 3 exhibits 2D supramolecular layers via the R 22(8) ringed hydrogen bonding units. 4 has 1D ladderlike chains, in which the 4-membered rings are cross-linked by the organic moieties of the H 3L 2 ligands. Additionally, 2D FTIR correlation analysis is applied with thermal and magnetic perturbation to clarify the structural changes of functional groups from H 3L 1 and H 3L 2 ligands in the compounds more efficiently.

  16. Flow transition with 2-D roughness elements in a 3-D channel

    NASA Technical Reports Server (NTRS)

    Liu, Zhining; Liu, Chaoquin; Mccormick, Stephen F.

    1993-01-01

    We develop a new numerical approach to study the spatially evolving instability of the streamwise dominant flow in the presence of roughness elements. The difficulty in handling the flow over the boundary surface with general geometry is removed by using a new conservative form of the governing equations and an analytical mapping. The numerical scheme uses second-order backward Euler in time, fourth-order central differences in all three spatial directions, and boundary-fitted staggered grids. A three-dimensional channel with multiple two-dimensional-type roughness elements is employed as the test case. Fourier analysis is used to decompose different Fourier modes of the disturbance. The results show that surface roughness leads to transition at lower Reynolds number than for smooth channels.

  17. Metal-insulator-metal waveguides for particle trapping and separation.

    PubMed

    Khan, Saara A; Chang, Chia-Ming; Zaidi, Zain; Shin, Wonseok; Shi, Yu; Ellerbee Bowden, Audrey K; Solgaard, Olav

    2016-06-21

    Optical particle trapping and separation are essential techniques in the fields of biology and chemistry. In many applications, it is important to identify passive separation techniques that only rely on intrinsic forces in a system with a fixed device geometry. We present a dual-waveguide sorter that utilizes the loss of metal-insulator-metal (MIM) waveguides for completely passive particle trapping and separation and is created using a unique angle sidewall deposition process. Our experiments show that an inner Au-Si3N4-Au waveguide is able to trap particles within the propagation distance of its dominant modes and release the particles into an outer Au-H2O-Au waveguide. The outer waveguide then propels the particles and separates them by size. The separation results are accurately modeled by a first-principles, analytical model. PMID:27216706

  18. Graphene oxide-based flexible metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Bag, A.; Hota, M. K.; Mallik, S.; Maiti, C. K.

    2013-05-01

    This work explores the fabrication of graphene oxide (GO)-based metal-insulator-metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ˜4 fF µm-2 measured at 1 MHz and permittivity of ˜6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending.

  19. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  20. A novel 2-D transition metal cyanide membrane: Modeling, structural, magnetic, and functional characterization

    NASA Astrophysics Data System (ADS)

    Goss, Marcus

    A novel 2-dimensional crystalline material composed of cyanide-bridged metal nanosheets with a square planar framework has been prepared. This material, similar to Hofmann clathrates, has a variety of interesting properties. The material is crystalline and possesses characteristics that include magnetic properties, electronic properties and useful structural features. They have recently been exfoliated into individual crystalline sheets. These sheets show a strong potential for use as ion selective membranes. Performance improvements in water purification and desalination by reverse osmosis methods owing to their single atom thickness is possible. A series of dynamic molecular simulations has provided an understanding of the mechanism for water permeability and salt rejection. Energy profiles for the passage of water and ionic species through the porous areas of these nanosheets have been built and reported. Performance estimates of the efficacy of this novel material for use as an ion selective membrane such as an improved desalination RO membrane are presented. Experiments in synthesis and exfoliation of this class of cyanide-bridged transition metal complex were conducted and the results are presented. A preliminary investigation into the magnetic properties of these materials is included.

  1. 3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides.

    PubMed

    Guo, Yuzheng; Liu, Dameng; Robertson, John

    2015-11-25

    The transition metal dichalcogenides (TMDs) are two-dimensional layered solids with van der Waals bonding between layers. We calculate their Schottky barrier heights (SBHs) using supercell models and density functional theory. It is found that the SBHs without defects are quite strongly pinned, with a pinning factor S of about S = 0.3, a similar value for both top and edge contact geometries. This arises because there is direct bonding between the contact metal atoms and the TMD chalcogen atoms, for both top and edge contact geometries, despite the weak interlayer bonding in the isolated materials. The Schottky barriers largely follow the metal induced gap state (MIGS) model, like those of three-dimensional semiconductors, despite the bonding in the TMDs being largely constrained within the layers. The pinning energies are found to be lower in the gap for edge contact geometries than for top contact geometries, which might be used to obtain p-type contacts on MoS2. PMID:26523332

  2. Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Cao, Jiang; Cresti, Alessandro; Esseni, David; Pala, Marco

    2016-02-01

    We simulate a band-to-band tunneling field-effect transistor based on a vertical heterojunction of single-layer MoS2 and WTe2, by exploiting the non-equilibrium Green's function method and including electron-phonon scattering. For both in-plane and out-of-plane transport, we attempt to calibrate out models to the few available experimental results. We focus on the role of chemical doping and back-gate biasing, and investigate the off-state physics of this device by analyzing the influence of the top-gate geometrical alignment on the device performance. The device scalability as a function of gate length is also studied. Finally, we present two metrics for the switching delay and energy of the device. Our simulations indicate that vertical field-effect transistors based on transition metal dichalcogenides can provide very small values of sub-threshold swing when properly designed in terms of doping concentration and top-gate extension length.

  3. Four divalent transition metal carboxyarylphosphonate compounds: Hydrothermal synthesis, structural chemistry and generalized 2D FTIR correlation spectroscopy studies

    SciTech Connect

    Lei Ran; Chai Xiaochuan; Mei Hongxin; Zhang Hanhui; Chen Yiping; Sun Yanqiong

    2010-07-15

    Four divalent transition metal carboxyarylphosphonates, [Ni(4,4'-bipy)H{sub 2}L{sup 1}(HL{sup 1}){sub 2}(H{sub 2}O){sub 2}].2H{sub 2}O 1, [Ni{sub 2}(4,4'-bipy)(L{sup 2})(OH)(H{sub 2}O){sub 2}].3H{sub 2}O 2, Mn(phen){sub 2}(H{sub 2}L{sup 1}){sub 2}3 and Mn(phen)(HL{sup 2}) 4 (H{sub 3}L{sup 1}=p-H{sub 2}O{sub 3}PCH{sub 2}-C{sub 6}H{sub 4}-COOH, H{sub 3}L{sup 2}=m-H{sub 2}O{sub 3}PCH{sub 2}-C{sub 6}H{sub 4}-COOH, 4,4'-bipy=4,4'-bipyridine, phen=1,10-phenanthroline) were synthesized under hydrothermal conditions. 1 features 1D linear chains built from Ni(II) ions bridging 4,4'-bipy. In 2, neighboring Ni{sub 4} cluster units are connected by pairs of H{sub 3}L{sup 2} ligands to form 1D double-crankshaft chains, which are interconnected by pairs of 4,4'-bipy into 2D sheets. 3 exhibits 2D supramolecular layers via the R{sub 2}{sup 2}(8) ringed hydrogen bonding units. 4 has 1D ladderlike chains, in which the 4-membered rings are cross-linked by the organic moieties of the H{sub 3}L{sup 2} ligands. Additionally, 2D FTIR correlation analysis is applied with thermal and magnetic perturbation to clarify the structural changes of functional groups from H{sub 3}L{sup 1} and H{sub 3}L{sup 2} ligands in the compounds more efficiently. - Graphical abstract: A series of divalent transition metal carboxyarylphosphonate compounds were synthesized under hydrothermal conditions. The figure displays 2D sheet structure with large windows in compound 2.

  4. Phonons in Ultrathin Oxide Films: 2D to 3D Transition in FeO on Pt(111).

    PubMed

    Spiridis, N; Zając, M; Piekarz, P; Chumakov, A I; Freindl, K; Goniakowski, J; Kozioł-Rachwał, A; Parliński, K; Ślęzak, M; Ślęzak, T; Wdowik, U D; Wilgocka-Ślęzak, D; Korecki, J

    2015-10-30

    The structural and magnetic properties of ultrathin FeO(111) films on Pt(111) with thicknesses from 1 to 16 monolayers (MLs) were studied using the nuclear inelastic scattering of synchrotron radiation. A distinct evolution of vibrational characteristics with thickness, revealed in the phonon density of states (PDOS), shows a textbook transition from 2D to 3D lattice dynamics. For the thinnest films of 1 and 2 ML, the low-energy part of the PDOS followed a linear ∝E dependence in energy that is characteristic for two-dimensional systems. This dependence gradually transforms with thickness to the bulk ∝E^{2} relationship. Density-functional theory phonon calculations perfectly reproduced the measured 1-ML PDOS within a simple model of a pseudomorphic FeO/Pt(111) interface. The calculations show that the 2D PDOS character is due to a weak coupling of the FeO film to the Pt(111) substrate. The evolution of the vibrational properties with an increasing thickness is closely related to a transient long-range magnetic order and stabilization of an unusual structural phase. PMID:26565477

  5. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces.

    PubMed

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-01-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems. PMID:26658474

  6. Reconfiguration of a flexible fiber immersed in a 2D dense granular flow close to the jamming transition

    NASA Astrophysics Data System (ADS)

    Kolb, Evelyne; Algarra, Nicolas; Vandembroucq, Damien; Lazarus, Arnaud

    2015-11-01

    We propose a new fluid/structure interaction in the unusual case of a dense granular medium flowing against an elastic fibre acting as a flexible intruder. We experimentally studied the deflection of a mylar flexible beam clamped at one side, the other free side facing a 2D granular flow in a horizontal cell moving at a constant velocity. We investigated the reconfiguration of the fibre as a function of the fibre's rigidity and of the granular packing fraction close but below the jamming in 2D. Imposing the fibre geometry like its length or thickness sets the critical buckling force the fibre is able to resist if it was not supported by lateral grains, while increasing the granular packing fraction might laterally consolidate the fibre and prevent it from buckling. But on the other side, the approach to jamming transition by increasing the granular packing fraction will be characterized by a dramatically increasing size of the cluster of connected grains forming a solid block acting against the fibre, which might promote the fibre's deflection. Thus, we investigated the granular flow fields, the fibre's deflexion as well as the forces experienced by the fibre and compared them with theoretical predictions from elastica for different loadings along the fibre. PMMH, CNRS UMR 7636, UPMC, ESPCI-ParisTech, 10 rue Vauquelin, 75231 Paris Cedex 05, France.

  7. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces

    PubMed Central

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-01-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems. PMID:26658474

  8. Phonons in Ultrathin Oxide Films: 2D to 3D Transition in FeO on Pt(111)

    NASA Astrophysics Data System (ADS)

    Spiridis, N.; Zając, M.; Piekarz, P.; Chumakov, A. I.; Freindl, K.; Goniakowski, J.; Kozioł-Rachwał, A.; Parliński, K.; Ślezak, M.; Ślezak, T.; Wdowik, U. D.; Wilgocka-Ślezak, D.; Korecki, J.

    2015-10-01

    The structural and magnetic properties of ultrathin FeO(111) films on Pt(111) with thicknesses from 1 to 16 monolayers (MLs) were studied using the nuclear inelastic scattering of synchrotron radiation. A distinct evolution of vibrational characteristics with thickness, revealed in the phonon density of states (PDOS), shows a textbook transition from 2D to 3D lattice dynamics. For the thinnest films of 1 and 2 ML, the low-energy part of the PDOS followed a linear ∝E dependence in energy that is characteristic for two-dimensional systems. This dependence gradually transforms with thickness to the bulk ∝E2 relationship. Density-functional theory phonon calculations perfectly reproduced the measured 1-ML PDOS within a simple model of a pseudomorphic Fe O /Pt(1 1 1 ) interface. The calculations show that the 2D PDOS character is due to a weak coupling of the FeO film to the Pt(111) substrate. The evolution of the vibrational properties with an increasing thickness is closely related to a transient long-range magnetic order and stabilization of an unusual structural phase.

  9. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces

    NASA Astrophysics Data System (ADS)

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-12-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems.

  10. Transition from 1D to 2D Laser-Induced Ultrasonic Wave Propagation in an Extended Plate

    NASA Astrophysics Data System (ADS)

    Laloš, Jernej; Požar, Tomaž; Možina, Janez

    2016-05-01

    Optodynamic interaction between a laser pulse and the surface of an opaque, solid elastic object produces transient waves that propagate and reverberate within the object. They can be, in general, categorized into three distinctive types which are all formed through different mechanisms: ablation-induced waves, light-pressure-induced waves, and thermoelastic waves. In this paper, out-of-plane displacements of such waves are simulated at the epicentral position on the opposite side of an extended plane-parallel elastic plate. Wave propagation is mathematically described by Green's transfer functions convolved with suitable time profiles of the incoming laser pulses. The simulated size of the circularly symmetric laser-illuminated area on the plate surface is varied to show the limit-to-limit transition of the displacement waveforms: from a 2D point source to an infinite 1D source.

  11. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO x

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Antonov, I. N.; Kasatkin, A. P.; Korolev, D. S.; Belov, A. I.; Mikhaylov, A. N.; Tetel'baum, D. I.

    2016-05-01

    The change of the immitance of the metal-insulator-metal memristive structures based on SiOx, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.

  12. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGESBeta

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  13. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  14. Nanoengineering strategies for metal-insulator-metal electrostatic nanocapacitors.

    PubMed

    Haspert, Lauren C; Lee, Sang Bok; Rubloff, Gary W

    2012-04-24

    Nanostructures can improve the performance of electrical energy storage devices. Recently, metal-insulator-metal (MIM) electrostatic capacitors fabricated in a three-dimensional cylindrical nanotemplate of anodized aluminum oxide (AAO) porous film have shown profound increase in device capacitance (100× or more) over planar structures. However, inherent asperities at the top of the nanostructure template cause locally high field strengths and lead to low breakdown voltage. This severely limits the usable voltage, the associated energy density (1/2 CV(2)), and thus the operational charge-discharge window of the device. We describe an electrochemical technique, complementary to the self-assembled template pore formation process in the AAO film, that provides nanoengineered topographies with significantly reduced local electric field concentrations, enabling breakdown fields up to 2.5× higher (to >10 MV/cm) while reducing leakage current densities by 1 order of magnitude (to ∼10(-10) A/cm(2)). In addition, we consider and optimize the AAO template and nanopore dimensions, increasing the capacitance per planar unit area by another 20%. As a result, the MIM nanocapacitor devices achieve an energy density of ∼1.5 Wh/kg--the highest reported. PMID:22394362

  15. Metal-Insulator Photocathode Heterojunction for Directed Electron Emission

    SciTech Connect

    Droubay, Timothy C.; Chambers, Scott A.; Joly, Alan G.; Hess, Wayne P.; Nemeth, Karoly; Harkay, Katherine C.; Spentzouris, Linda

    2014-02-14

    New photocathode materials capable of producing intense and directed electron pulses are needed for development of next generation light sources and dynamic transmission electron microscopy. Ideal photocathodes should have high photoemission quantum efficiency (QE) and be capable of delivering collimated and well-shaped pulses of consistent charge under high-field operating conditions. High-brightness and low-intrinsic emittance electron pulses have been predicted for hybrid metal-insulator photocathode designs constructed from three to four monolayer MgO films on atomically flat silver. Here we use angle-resolved photoelectron spectroscopy to confirm directional photoemission and a large increase in QE under ultraviolet laser excitation of an ultrathin MgO film on Ag(001). We observe new low-binding energy photoemission, not seen for Ag(001), and greater electron emission in the normal direction. Under 4.66 eV laser excitation, the photoemission quantum efficiency of the MgO/Ag(001) hybrid photocathode is a factor of seven greater than that for clean Ag(001).

  16. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides.

    PubMed

    Li, Yongtao; Wang, Yan; Huang, Le; Wang, Xiaoting; Li, Xingyun; Deng, Hui-Xiong; Wei, Zhongming; Li, Jingbo

    2016-06-22

    Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)electronics such as signal transmission and logic circuit, etc. Herein, we report the gate-tunable anti-ambipolar devices on the basis of few-layer transition metal dichalcogenides (TMDs) heterostructures to gain higher information storage density. Our study shows that carrier concentration regulated by the gate voltage plays a major role in the "anti-ambipolar" behavior, where the drain-source current can only pass through in specific range of gate voltage (Vg) and it will be restrained if the Vg goes beyond the range. Several improved strategies were theoretically discussed and experimentally adopted to obtain higher current on/off ratio for the anti-ambipolar devices, such as choosing suitable p-/n-pair, increasing carrier concentration by using thicker-layer TMDs, and so on. The modified SnS2/WSe2 device with the current on/off ratio exceeding 200 and on-state Vg ranging from -20 to 0 V was successfully achieved. On the basis of the anti-ambipolar field-effect transistors (FETs), we also reveal the potential of three-channel device unit for signal processing and information storage. With the equal quantity N of device units, 3(N) digital signals can be obtained from such three-channel devices, which are much larger than 2(N) ones obtained from traditional two-channel complementary metal oxide semiconductors (CMOS). PMID:27258569

  17. Lifetimes and Oscillator Strengths for Ultraviolet Transitions Involving 6s26d 2D and 6s6p3 2D Levels in Pb II

    NASA Astrophysics Data System (ADS)

    Federman, Steven Robert; Heidarian, Negar; Irving, Richard; Ritchey, Adam M.; Ellis, David; Cheng, Song; Curtis, Larry; Furman, Walter

    2016-06-01

    We conducted beam-foil measurements on levels producing Pb II lines at 1203.6 and 1433.9 Å. These were supplemented by archival data from the Hubble Space Telescope (HST) covering the Pb II transitions. The oscillator strengths derived from our experimental lifetimes are generally consistent with recent large-scale theoretical results, as well as our own relativistic calculations. Our analysis of the HST spectra confirms the relative strengths of the two lines. However, the oscillator strength obtained for the line at 1433 Å is significantly smaller than earlier theoretical values used to derive the interstellar lead abundance, leading to an increase of 0.43 dex in this quantity. We will present our results for Pb II and compare them with others from the literature.

  18. Transition probabilities for the Au ((2)S, (2)D, and (2)P) with SiH(4) reaction.

    PubMed

    Pacheco-Sánchez, J H; Luna-García, H M; García-Cruz, L M; Novaro, O

    2010-01-28

    Transition probabilities on the interaction of the ground and the lowest excited states of gold Au ((2)S:5d(10)6s(1), (2)D:5d(9)6s(2), and (2)P:5d(10)6p(1)) with silane (SiH(4)) are studied through ab initio Hartree-Fock self-consistent field calculations, where the atom's core is represented by relativistic effective core potentials. These calculations are followed by a multiconfigurational self-consistent field study. The correlation energy is accounted for through extensive variational and perturbative second order multireference Moller-Plesset configuration interaction analysis of selected perturbations obtained by iterative process calculations using the CIPSI program package. It is found that the Au atom in the ((2)P:5d(10)6p(1)) state inserts in the Si-H bond. In this interaction its corresponding D (2)A(') potential energy surface is initially attractive and only becomes repulsive after encountering an avoided crossing with the initially repulsive C (2)A(') surface linked to the Au((2)D:5d(9)6s(2))-SiH(4) fragments. The A, B, and C (2)A(') curves derived from the Au((2)D:5d(9)6s(2)) atom interaction with silane are initially repulsive, each one of them showing two avoided crossings, while the A (2)A(') curve goes sharply downwards until it meets the X (2)A(') curve interacting adiabatically, which is linked with the Au((2)S:5d(10)6s(1))-SiH(4) moieties. The A (2)A(') curve becomes repulsive after the avoided crossing with the X (2)A('), curve. The lowest-lying X (2)A(') potential leads to the HAuSiH(3) X (2)A(') intermediate molecule. This intermediate molecule, diabatically correlated with the Au((2)P:5d(10)6p(1))+SiH(4) system which lies 3.34 kcal/mol above the ground state reactants, has been carefully characterized as have the dissociation channels leading to the AuH+SiH(3) and H+AuSiH(3) products. These products are reached from the HAuSiH(3) intermediate without any activation barrier. The Au-SiH(4) calculation results are successfully compared to

  19. 3D spin-flop transition in enhanced 2D layered structure single crystalline TlCo2Se2.

    PubMed

    Jin, Z; Xia, Z-C; Wei, M; Yang, J-H; Chen, B; Huang, S; Shang, C; Wu, H; Zhang, X-X; Huang, J-W; Ouyang, Z-W

    2016-10-01

    The enhanced 2D layered structure single crystalline TlCo2Se2 has been successfully fabricated, which exhibits field-induced 3D spin-flop phase transitions. In the case of the magnetic field parallel to the c-axis (B//c), the applied magnetic field induces the evolution of the noncollinear helical magnetic coupling into a ferromagnetic (FM) state with all the magnetization of the Co ion parallel to the c-axis. A striking variation of the field-induced strain within the ab-plane is noticed in the magnetic field region of 20-30 T. In the case of the magnetic field perpendicular to the c-axis (B  ⊥  c), the inter-layer helical antiferromagnetic (AFM) coupling may transform to an initial canted AFM coupling, and then part of it transforms to an intermediate metamagnetic phase with the alignment of two-up-one-down Co magnetic moments and finally to an ultimate FM coupling in higher magnetic fields. The robust noncollinear AFM magnetic coupling is completely destroyed above 30 T. In combination with the measurements of magnetization, magnetoresistance and field-induced strain, a complete magnetic phase diagram of the TlCo2Se2 single crystal has been depicted, demonstrating complex magnetic structures even though the crystal geometry itself gives no indication of the magnetic frustration. PMID:27485370

  20. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides

    SciTech Connect

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe2 and WSe2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo1-xWxSe2 alloys at low W concentrations. This surprising phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.

  1. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides

    DOE PAGESBeta

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe2 and WSe2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo1-xWxSe2 alloys at low W concentrations. This surprisingmore » phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.« less

  2. Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Nag, Joyeeta; Ryckman, Judson D.; Hertkorn, Michael T.; Choi, Bo K.; Haglund, Richard F., Jr.; Weiss, Sharon M.

    2010-02-01

    We present an optical modulator based on a silicon ring resonator coated with vanadium-dioxide (VO2) motivated by the need for compact silicon-compatible optical switches operating at THz speeds. VO2 is a functional oxide undergoing metal-insulator transition (MIT) near 67°C, with huge changes in electrical resistivity and near-infrared transmission. The MIT can be induced thermally, optically (by ultra-fast laser excitation in less than 100 fs), and possibly with electric field. VO2 is easily deposited on silicon and its ultrafast switching properties in the near-infrared can be used to tune the effective index of ring resonators in the telecommunication frequencies instead of depending on the weak electro-optic properties of silicon. The VO2-silicon hybrid ring resonator is expected to operate at speeds up to 10 THz at low Q-factor and with shorter cavity lifetimes, thus enabling compact, faster, more robust devices. We have made ring resonator structures on SOI substrates with rings varying in diameter from 3-10 μm coupled to 5 mm-long nanotapered waveguides at separations of 200 nm. Rings were coated with 80 nm of VO2 by pulsed laser deposition. As proof-of-concept, by switching the VO2 top layer thermally, we were able to modulate the resonance frequency of the ring to match with the predictions from our FDTD simulations.

  3. Impact of Interface Roughness on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells

    NASA Astrophysics Data System (ADS)

    Goble, Nicholas; Watson, John; Manfra, Michael; Gao, Xuan

    2014-03-01

    Understanding the non-monotonic behavior in the temperature dependent resistance, R(T) , of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells with varying interface roughness by changing the Al fraction x in the AlxGa1-xAs barrier. Prior to this work, no comprehensive study of the non-monotonic resistance peak against controlled barrier characteristics has been conducted. We show that the shape of the electronic contribution to R(T) is qualitatively unchanged throughout all of our measurements, regardless of the percentage of Al in the barrier. It is observed that increasing x or short range interface roughness suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short range versus long range disorder in the 2D metallic transport in this 2D hole system with interaction parameter rs ~ 20. N.G. acknowledges the US DOE GAANN fellowship (P200A090276 & P200A070434). M.J.M. is supported by the Miller Family Foundation and the US DOE, Office of Basic Energy Sciences, DMS (DE-SC0006671). X.P.A.G thanks the NSF for funding support (DMR-0906415).

  4. Signatures of the Berezinskii-Kosterlitz-Thouless transition on the zeros of the canonical partition function for the 2D XY-model

    NASA Astrophysics Data System (ADS)

    Rocha, Julio; Mol, Lucas; Costa, Bismarck

    2015-03-01

    In this work we show that the canonical partition function zeros, the Fisher zeros, can be used to uniquely characterize a transition as being in the Berezinskii-Kosterlitz-Thouless (BKT) class of universality. By studying the zeros map for the 2D XY model we found that its internal border coalesces into the real positive axis in a finite region corresponding to temperatures smaller than the BKT transition temperature. This behavior is consistent with the predicted existence of a line of critical points below the transition temperature, allowing one to distinguish the BKT class of universality from other ones. This work was partially supported by CNPq and Fapemig, Brazilian Agencies.

  5. Optical properties and solar selectivity of metal-insulator composite films

    NASA Astrophysics Data System (ADS)

    Craighead, H. G.

    1980-03-01

    The results of an experimental study of metal-insulator composite films are described. A description of the entire process of sample production, characterization, experimental examination and ultimate demonstration of an application is included. The problem considered was to measure the optical constants of metal insulator-composite materials and check the applicability of effective medium-composite materials and check the applicability of effective medium theories in predicting their optical properties. With this knowledge, there was also the goal of designing and fabricating efficient and durable solar photothermal absorber surfaces. The method used for controlled coevaporation of microscopically segregated metal-insulator composites is described. With this technique many different composites were produced; the most notable ones were Ni/Al2O3, Au/Al2O3, Au/MgO, Ag/MgO and Pt/Al2O3.

  6. Advanced piezoresistance of extended metal-insulator core-shell nanoparticle assemblies.

    PubMed

    Athanassiou, E K; Krumeich, F; Grass, R N; Stark, W J

    2008-10-17

    Assembled metal-insulator nanoparticles with a core-shell geometry provide access to materials containing a large number (>10(6)) of tunneling barriers. We demonstrate the production of ceramic coated metal nanoparticles exhibiting an exceptional pressure-sensitive conductivity. We further show that graphene bi- and trilayers on 20 nm copper nanoparticles are insulating in such a core-shell geometry and show a similar pressure-dependent conductivity. This demonstrates that core-shell metal-insulator assemblies offer a route to alternative sensing materials. PMID:18999701

  7. 1α,25(OH)2D3 Suppresses the Migration of Ovarian Cancer SKOV-3 Cells through the Inhibition of Epithelial–Mesenchymal Transition

    PubMed Central

    Hou, Yong-Feng; Gao, Si-Hai; Wang, Ping; Zhang, He-Mei; Liu, Li-Zhi; Ye, Meng-Xuan; Zhou, Guang-Ming; Zhang, Zeng-Li; Li, Bing-Yan

    2016-01-01

    Ovarian cancer is the most lethal gynecological malignancy due to its high metastatic ability. Epithelial-mesenchymal transition (EMT) is essential during both follicular rupture and epithelium regeneration. However, it may also accelerate the progression of ovarian carcinomas. Experimental studies have found that 1α,25-dihydroxyvitamin-D3 [1α,25(OH)2D3] can inhibit the proliferation of ovarian cancer cells. In this study, we investigated whether 1α,25(OH)2D3 could inhibit the migration of ovarian cancer cells via regulating EMT. We established a model of transient transforming growth factor-β1(TGF-β1)-induced EMT in human ovarian adenocarcinoma cell line SKOV-3 cells. Results showed that, compared with control, 1α,25(OH)2D3 not only inhibited the migration and the invasion of SKOV-3 cells, but also promoted the acquisition of an epithelial phenotype of SKOV-3 cells treated with TGF-β1. We discovered that 1α,25(OH)2D3 increased the expression of epithelial marker E-cadherin and decreased the level of mesenchymal marker, Vimentin, which was associated with the elevated expression of VDR. Moreover, 1α,25(OH)2D3 reduced the expression level of transcription factors of EMT, such as slug, snail, and β-catenin. These results indicate that 1α,25(OH)2D3 suppresses the migration and invasion of ovarian cancer cells by inhibiting EMT, implying that 1α,25(OH)2D3 might be a potential therapeutic agent for the treatment of ovarian cancer. PMID:27548154

  8. Measured branching ratios for O II2D and 2P transitions in the wavelength range 530 to 800 A. [airglow spectroscopy

    NASA Technical Reports Server (NTRS)

    Morrison, D.; Cunningham, A. J.; Christensen, A. B.

    1981-01-01

    Branching ratios for four sets of extreme ultraviolet transitions terminating on the 2D0 and 2P0 metastable levels of ionized oxygen have been measured. The emissions were excited in both an open window hollow cathode and a capillary discharge lamp, and the branching ratios were derived from the observed intensity ratios of the multiplet pairs. The results are in good agreement with theoretical values and compare favorably, within experimental uncertainties, with line ratios obtained by EUV spectroscopy of the airglow.

  9. Metallic 2D Surface State of Silicon by Ionic Liquid gating and observation of Reentrant Insulating behavior

    NASA Astrophysics Data System (ADS)

    Nelson, J. J.; Goldman, A. M.

    2015-03-01

    Metal insulator transitions are usually observed in high mobility and low carrier density 2D electron systems. There are several open questions regarding the metallic state including its existence in the limit of zero temperature. The current experimental focus is on the production of higher mobility samples to push the critical carrier density to even lower values, which will increase the effects of the Coulomb interaction. Here we report an unexpected result, the observation of the onset of a metallic state at high carrier densities in silicon gated with the ionic liquid DEME-TFSI. In addition we have observed a return to the insulating state as the carrier density was further increased. This reentrant insulting behavior is an effect that was recently predicted. Supported in part by NSF/DMR-1263316. Part of this work was carried out at the Minnesota Nanocenter.

  10. In-situ Hydrogen Sorption 2D-ACAR Facility for the Study of Metal Hydrides for Hydrogen Storage

    NASA Astrophysics Data System (ADS)

    Legerstee, W. J.; de Roode, J.; Anastasopol, A.; Falub, C. V.; Eijt, S. W. H.

    We developed a dedicated hydrogen sorption setup coupled to a positron 2D-ACAR (two-dimensional Angular Correlation of Annihilation Radiation) setup employing a 22Na-source, which will enable to collect 2D-ACAR momentum distributions in-situ as a function of temperature, hydrogen pressure and hydrogen content. In parallel, a dedicated glovebox was constructed for handling air-sensitive metal and metal hydride samples, with a special entrance for the 2D-ACAR sample insert. The 2D-ACAR setup was tested in first measurements on a Pd0.75Ag0.25 foil and on a ball-milled MgH2 powder in both the hydrogen loaded and desorbed states. The hydrogen loaded Pd0.75Ag0.25Hx sample was kept under a 1 bar hydrogen pressure to prevent partial desorption during measurements at room temperature. The collected 2D-ACAR distributions of Pd0.75Ag0.25 and Pd0.75Ag0.25Hx showed similar features as observed in previous studies. The broadening of the ACAR distributions observed for the Mg to MgH2 metal-insulator transition was compared in a quantitative manner to ab-initio calculations reported in the literature.

  11. Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N.; Antonov, I. N.; Kasatkin, A. P.

    2016-05-01

    We have studied light-induced resistive switching in metal-insulator-semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

  12. SU-E-P-35: Real-Time Patient Transit Dose Verification of Volumetric Modulated Arc Radiotherapy by a 2D Ionization Chamber Array

    SciTech Connect

    Liu, X

    2015-06-15

    Purpose: To explore the real-time dose verification method in volumetric modulated arc radiotherapy (VMAT) with a 2D array ion chamber array. Methods: The 2D ion chamber array was fixed on the panel of electronic portal imaging device (EPID). Source-detector distance (SDD)was 140cm. 8mm RW3 solid water was added to the detector panel to achieve maximum readings.The patient plans for esophageal, prostate and liver cancers were selected to deliver on the cylindrical Cheese phantom 5 times in order to validate the reproducibility of doses. Real-time patient transit dose measurements were performed at each fraction. Dose distributions wereevaluated using gamma index criteria of 3mm DTA and 3% dose difference referred to the firsttime Result. Results: The gamma index pass rate in the Cheese phantom were about 98%; The gamma index pass rate for esophageal, liver and prostate cancer patient were about 92%,94%, and 92%, respectively; Gamma pass rate for all single fraction were more than 90%. Conclusion: The 2D array is capable of monitoring the real time transit doses during VMAT delivery. It is helpful to improve the treatment accuracy.

  13. Triangular step instability and 2D/3D transition during the growth of strained Ge films on Si(100)

    SciTech Connect

    Chen, K.M.; Jesson, D.E.; Pennycook, S.J.; Mostoller, M.; Kaplan, T.; Thundat, T.; Warmack, R.J.

    1995-04-01

    We show that an activation energy barrier exists to the formation of wavy step edges due to stress-driven 2D instability. The barrier height and the barrier width depend sensitively on the surface stress anisotropy and step free energy. The large misfit strain of Ge films significantly reduces the barrier by lowering the S{sub B} step energy, inducing S{sub A} steps to undergo a triangular instability even during low temperature growth of Ge on Si(100). The step instability results in a novel arrangement of stress domains, and the interaction between the domains causes a spatial variation of surface strain with a surprisingly large influence on the energy barrier for island nucleation. Calculations indicate a dramatic enhancement in the nucleation of 3D islands at the apex regions of triangular steps, in good agreement with our experimental measurements.

  14. Frequency comb assisted measurement of fundamental transitions of cold H3+, H2D+ and D2H+

    NASA Astrophysics Data System (ADS)

    Jusko, Pavol; Konietzko, Christoph; Schlemmer, Stephan; Asvany, Oskar

    2016-01-01

    H3+ and two of its deuterated variants have been trapped and cooled in a 4 K trap machine, and their fundamental vibrational transitions probed with the laser induced reactions method. With the help of a frequency comb system the line centers are determined with high accuracy and precision, typically well below 1 MHz. For the deuterated variants, ground state combination differences allow for comparison with existing rotational THz data, and the accurate prediction thereof.

  15. Pure 2D vortex-glass phase transition with Tg = 0 K in deoxygenated YBa2Cu3O6.4 thin films

    NASA Astrophysics Data System (ADS)

    Sefrioui, Z.; Arias, D.; Varela, M.; López de la Torre, M. A.; León, C.; Loos, G. D.; Santamaría, J.

    1999-12-01

    Non-linear I-V characteristics have been measured on high-quality deoxygenated YBa2Cu3O6.4 thin films, in magnetic fields up to 8 T. Critical scaling analysis of the current-voltage data demonstrates the existence of a pure two-dimensional vortex-glass transition with Tg = 0 for high magnetic fields (7, 8 T). The validity of the pure 2D vortex-glass model in our samples is checked with the linear resistivity term and the non-linear current density. The linear resistivity ρlin(T) propto exp [ - (T0/T)p] from resistivity vs. temperature and current-voltage measurements, produces the parameters p (p = 0.78 for H = 7 T, p = 0.73 for H = 8 T) and T0 (230 K) used for the scaling analysis. The non-linear current density jnl exhibits a power law temperature dependence jnl(T) propto T3 suggesting ν2D = 2 as predicted by the 2D vortex-glass theory. The values of the exponent p obtained in this study are in good agreement with the predictions of the quantum theory of vortex tunneling.

  16. Novel Way to Characterize Metal-Insulator-Metal Devices via Nanoindentation: Preprint

    SciTech Connect

    Periasamy, P.; Packard, C. E.; O?Hayre, R. P.; Berry, J. J.; Parilla, P. A.; Ginley, D. S.

    2011-07-01

    Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second 'metal' (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.

  17. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  18. Griffiths singularity of quantum phase transition in ion-gated ZrNCl

    NASA Astrophysics Data System (ADS)

    Saito, Yu; Nojima, Tsutomu; Iwasa, Yoshihiro

    Recent technological advances of thin films fabrication, especially mechanical exfoliation, led to discoveries of less-disordered highly-crystalline two-dimensional (2D) superconductors; atomically thin NbSe2 and ion-gated 2D materials, which show intrinsic properties of 2D superconductors with minimal disorder; for example, metallic ground state, and unconventional 2D Ising superconductivity due to pure spin-valley locking effect. In this talk, we focus on magnetotransport properties of an ionic-liquid gated ZrNCl, which exhibited Griffiths singularity-like behavior in superconductor-metal-insulator transition induced by magnetic fields at low carrier concentrations. The overall behavior is quite similar to the recent results of superconducting Ga thin films, in which quantum Griffiths singularity was observed in vortex-glass state. We will discuss the relationship between Griffiths singularity and quantum tunneling or flux flow of vortices phase (vortex liquid) in our system

  19. Quantification of transition dipole strengths using 1D and 2D spectroscopy for the identification of molecular structures via exciton delocalization: Application to α-helices

    PubMed Central

    Grechko, Maksim; Zanni, Martin T.

    2012-01-01

    Vibrational and electronic transition dipole strengths are often good probes of molecular structures, especially in excitonically coupled systems of chromophores. One cannot determine transition dipole strengths using linear spectroscopy unless the concentration is known, which in many cases it is not. In this paper, we report a simple method for measuring transition dipole moments from linear absorption and 2D IR spectra that does not require knowledge of concentrations. Our method is tested on several model compounds and applied to the amide I′ band of a polypeptide in its random coil and α-helical conformation as modulated by the solution temperature. It is often difficult to confidently assign polypeptide and protein secondary structures to random coil or α-helix by linear spectroscopy alone, because they absorb in the same frequency range. We find that the transition dipole strength of the random coil state is 0.12 ± 0.013 D2, which is similar to a single peptide unit, indicating that the vibrational mode of random coil is localized on a single peptide unit. In an α-helix, the lower bound of transition dipole strength is 0.26 ± 0.03 D2. When taking into account the angle of the amide I′ transition dipole vector with respect to the helix axis, our measurements indicate that the amide I′ vibrational mode is delocalized across a minimum of 3.5 residues in an α-helix. Thus, one can confidently assign secondary structure based on exciton delocalization through its effect on the transition dipole strength. Our method will be especially useful for kinetically evolving systems, systems with overlapping molecular conformations, and other situations in which concentrations are difficult to determine. PMID:23163364

  20. Quantification of transition dipole strengths using 1D and 2D spectroscopy for the identification of molecular structures via exciton delocalization: Application to α-helices

    NASA Astrophysics Data System (ADS)

    Grechko, Maksim; Zanni, Martin T.

    2012-11-01

    Vibrational and electronic transition dipole strengths are often good probes of molecular structures, especially in excitonically coupled systems of chromophores. One cannot determine transition dipole strengths using linear spectroscopy unless the concentration is known, which in many cases it is not. In this paper, we report a simple method for measuring transition dipole moments from linear absorption and 2D IR spectra that does not require knowledge of concentrations. Our method is tested on several model compounds and applied to the amide I' band of a polypeptide in its random coil and α-helical conformation as modulated by the solution temperature. It is often difficult to confidently assign polypeptide and protein secondary structures to random coil or α-helix by linear spectroscopy alone, because they absorb in the same frequency range. We find that the transition dipole strength of the random coil state is 0.12 ± 0.013 D2, which is similar to a single peptide unit, indicating that the vibrational mode of random coil is localized on a single peptide unit. In an α-helix, the lower bound of transition dipole strength is 0.26 ± 0.03 D2. When taking into account the angle of the amide I' transition dipole vector with respect to the helix axis, our measurements indicate that the amide I' vibrational mode is delocalized across a minimum of 3.5 residues in an α-helix. Thus, one can confidently assign secondary structure based on exciton delocalization through its effect on the transition dipole strength. Our method will be especially useful for kinetically evolving systems, systems with overlapping molecular conformations, and other situations in which concentrations are difficult to determine.

  1. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    NASA Astrophysics Data System (ADS)

    Sun, Shichuang; Fu, Kai; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Qi, Zhiqiang; Li, Shuiming; Sun, Qian; Cai, Yong; Dai, Jiangnan; Chen, Changqing; Zhang, Baoshun

    2016-01-01

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal-organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 1014 cm-2) and 90 keV (dose: 1 × 1014 cm-2), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current IDSmax at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance gmmax was 83 mS/mm.

  2. Testing a new analytical approach for determination of vibrational transition moment directions in low symmetry planar molecules: 1-D- and 2-D-naphthalene.

    PubMed

    Rogojerov, Marin; Keresztury, Gábor; Kamenova-Nacheva, Mariana; Sundius, Tom

    2012-12-01

    A new analytical approach for improving the precision in determination of vibrational transition moment directions of low symmetry molecules (lacking orthogonal axes) is discussed in this paper. The target molecules are partially uniaxially oriented in nematic liquid crystalline solvent and are studied by IR absorption spectroscopy using polarized light. The fundamental problem addressed is that IR linear dichroism measurements of low symmetry molecules alone cannot provide sufficient information on molecular orientation and transition moment directions. It is shown that computational prediction of these quantities can supply relevant complementary data, helping to reveal the hidden information content and achieve a more meaningful and more precise interpretation of the measured dichroic ratios. The combined experimental and theoretical/computational method proposed by us recently for determination of the average orientation of molecules with C(s) symmetry has now been replaced by a more precise analytical approach. The new method introduced and discussed in full detail here uses a mathematically evaluated angle between two vibrational transition moment vectors as a reference. The discussion also deals with error analysis and estimation of uncertainties of the orientational parameters. The proposed procedure has been tested in an analysis of the infrared linear dichroism (IR-LD) spectra of 1-D- and 2-D-naphthalene complemented with DFT calculations using the scaled quantum mechanical force field (SQM FF) method. PMID:22981590

  3. Two Keggin-type heteropolytungstates with transition metal as a central atom: Crystal structure and magnetic study with 2D-IR correlation spectroscopy

    SciTech Connect

    Chai, Feng; Chen, YiPing; You, ZhuChai; Xia, ZeMin; Ge, SuZhi; Sun, YanQiong; Huang, BiHua

    2013-06-01

    Two Keggin-type heteropolytungstates, [Co(phen)₃]₃[CoW₁₂O₄₀]·9H₂O 1 (phen=1,10-phenanthroline) and [Fe(phen)₃]₂[FeW₁₂O₄₀]·H₃O·H₂O 2, have been synthesized via the hydrothermal technique and characterized by single crystal X-ray diffraction analyses, IR, XPS, TG analysis, UV–DRS, XRD, thermal-dependent and magnetic-dependent 2D-COS IR (two-dimensional infrared correlation spectroscopy). Crystal structure analysis reveals that the polyanions in compound 1 are linked into 3D supramolecule through hydrogen bonding interactions between lattice water molecules and terminal oxygen atoms of polyanion units, and [Co(phen)₃]²⁺ cations distributed in the polyanion framework with many hydrogen bonding interactions. The XPS spectra indicate that all the Co atoms in 1 are +2 oxidation state, the Fe atoms in 2 existing with +2 and +3 mixed oxidation states. - Graphical abstract: The magnetic-dependent synchronous 2D correlation IR spectra of 1 (a), 2 (b) over 0–50 mT in the range of 600–1000 cm⁻¹, the obvious response indicate two Keggin polyanions skeleton susceptible to applied magnetic field. Highlights: • Two Keggin-type heteropolytungstates with transition metal as a central atom has been obtained. • Compound 1 forms into 3D supramolecular architecture through hydrogen bonding between water molecules and polyanions. • Magnetic-dependent 2D-IR correlation spectroscopy was introduced to discuss the magnetism of polyoxometalate.

  4. Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2016-02-01

    Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

  5. Directional coupler and nonlinear Mach-Zehnder interferometer based on metal-insulator-metal plasmonic waveguide.

    PubMed

    Pu, Mingbo; Yao, Na; Hu, Chenggang; Xin, Xuecheng; Zhao, Zeyu; Wang, Changtao; Luo, Xiangang

    2010-09-27

    Directional coupler (DC) and nonlinear Mach-Zehnder interferometer (MZI) based on metal-insulator-metal (MIM) plasmonic waveguide are investigated numerically. We show that the coupling length increases almost linearly with the wavelength and this property is utilized in the design of wavelength division multiplexer (WDM). A nonlinear MZI, with one branch filled with Kerr nonlinear medium, is built to ensure controlling light with light. Employing nonlinear processes including self-phase modulation (SPM) and cross-phase modulation (XPM), intensity-based router and all-optical switch are realized. PMID:20940998

  6. A Refractive Index Sensor Based on a Metal-Insulator-Metal Waveguide-Coupled Ring Resonator

    PubMed Central

    Yan, Shu-Bin; Luo, Liang; Xue, Chen-Yang; Zhang, Zhi-Dong

    2015-01-01

    A refractive index sensor composed of two straight metal-insulator-metal waveguides and a ring resonator is presented. One end of each straight waveguide is sealed and the other end acts as port. The transmission spectrum and magnetic field distribution of this sensor structure are simulated using finite-difference time-domain method (FDTD). The results show that an asymmetric line shape is observed in the transmission spectrum, and that the transmission spectrum shows a filter-like behavior. The quality factor and sensitivity are taken to characterize its sensing performance and filter properties. How structural parameters affect the sensing performance and filter properties is also studied. PMID:26610491

  7. A Refractive Index Sensor Based on a Metal-Insulator-Metal Waveguide-Coupled Ring Resonator.

    PubMed

    Yan, Shu-Bin; Luo, Liang; Xue, Chen-Yang; Zhang, Zhi-Dong

    2015-01-01

    A refractive index sensor composed of two straight metal-insulator-metal waveguides and a ring resonator is presented. One end of each straight waveguide is sealed and the other end acts as port. The transmission spectrum and magnetic field distribution of this sensor structure are simulated using finite-difference time-domain method (FDTD). The results show that an asymmetric line shape is observed in the transmission spectrum, and that the transmission spectrum shows a filter-like behavior. The quality factor and sensitivity are taken to characterize its sensing performance and filter properties. How structural parameters affect the sensing performance and filter properties is also studied. PMID:26610491

  8. Metal/insulator/semiconductor tunnel diodes formed by the oxidation of polycrystaline diamond films

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Deneuville, A.; Gheeraert, E.; Fontaine, F.; Lenormand, F.

    1994-09-01

    Polycrystalline diamond films have been annealed under O2 at 600 C, or have been dipped in a H2SO4/CrO3 solution. Both treatments result in the formation of a thin electrically insulating layer at the top of the films. Subsequent metallization results in the formation of a metal/insulator/diamond tunnel diode with a potential barrier for holes of 0.85 eV, and with a Fermi level localized at about 0.45 eV above the diamond valence band.

  9. Metal-insulator-metal capacitors' current instability improvement using dielectric stacks to prevent oxygen vacancies formation

    NASA Astrophysics Data System (ADS)

    Manceau, J.-P.; Bruyere, S.; Jeannot, S.; Sylvestre, A.; Gonon, P.

    2007-09-01

    Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of a thin layer of Al2O3 in the range of a few tens of angstroms enables the strong reduction of current instabilities while maintaining good electrical performances.

  10. Reliability of HfO2 metal-insulator-metal capacitors under AC stress

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Jomni, F.; Gonon, P.; Khaldi, O.; Latu-Romain, L.; Mannequin, C.; Bsiesy, A.; Basrour, S.; Yangui, B.

    2016-04-01

    The electrical reliability of HfO2 based metal-insulator-metal capacitors is investigated under AC stress voltage. The capacitance-time (C-t) and conductance-time (G-t) responses are studied for different stress amplitudes and frequencies. Time-to-breakdown is observed to strongly depend on the electrode nature. Electrical degradation is discussed via a model based on oxygen vacancy/oxygen ions generation. Defect generation is controlled by the injecting nature of electrodes. Partial recovery, and so time-to-breakdown, are controlled by the ability of electrodes to store oxygen.

  11. Metal-insulator-semi-conductor studies of lead telluride. [capacitance and conductance-voltage characteristics

    NASA Technical Reports Server (NTRS)

    Lilly, D. A.; Joslin, D. E.; Kan, H. K. A.

    1976-01-01

    The capacitance and conductance-voltage characteristics were measured on metal-insulator-semiconductor capacitors fabricated with zirconium dioxide films on single-crystal lead telluride. At 77 K, on both n- and p-type substrates, evidence of surface potential control was obtained. Comparison of the measured capacitance-voltage characteristics with those calculated from the equilibrium solution of the one-dimensional Poisson equation indicated qualitative agreement, although the slope of the measured capacitance in the region near the capacitance minimum was less steep than calculated.

  12. Flexible metal-insulator-metal capacitors on polyethylene terephthalate plastic substrates

    NASA Astrophysics Data System (ADS)

    Hota, M. K.; Bera, M. K.; Maiti, C. K.

    2012-10-01

    Realization of flexible electronic devices on polyethylene terephthalate flexible plastic substrates is reported. Metal-insulator-metal capacitors have been fabricated using radio frequency sputtered deposited thin films of Nb2O5 on the flexible substrate. Good electrical characteristics have been obtained in terms of quadratic voltage coefficient of capacitance, high capacitance density (˜ 11 fF µm-2), high dielectric constant (˜37) and low dissipation factor (<0.1). Besides, in repetitive bending test, the devices show excellent electrical stability and high mechanical flexibility due to the high ductility of niobium and low-temperature processing used in this study.

  13. Optical properties and structural phase transitions of lead-halide based inorganic-organic 3D and 2D perovskite semiconductors under high pressure

    NASA Astrophysics Data System (ADS)

    Matsuishi, K.; Ishihara, T.; Onari, S.; Chang, Y. H.; Park, C. H.

    2004-11-01

    Optical absorption, photoluminescence and Raman scattering of lead-halide based inorganic-organic perovskite semiconductors were measured under quasi-hydrostatic pressure at room temperature. For the 3D perovskite semiconductor, (CH3NH3)PbBr3, the free exciton photoluminescence band exhibits red-shifts with pressure, and jumps to a higher energy by 0.07 eV at 0.8 GPa, which is associated with a phase transition from a cubic to an orthorhombic structure confirmed by Raman scattering. Above the phase transition pressure, the exciton band shows blue-shifts with further increasing pressure, and eventually disappears above 4.7 GPa. The results are compared with those for the 2D perovskite semiconductor, (C4H9NH3)2PbI4. First principles pseudopotential calculations were performed to investigate changes in octahedral distortion and electronic band structures with pressure. The calculations have explained the origins of the intriguing changes in the electronic states with pressure in view of bonding characters between atomic orbitals in octahedra.

  14. Five novel transition metal coordination polymers with 2D/3D framework structure based on flexible H{sub 2}tzda and ancillary ligand bpe

    SciTech Connect

    Wang Yuting; Xu Yan; Fan Yaoting; Hou Hongwei

    2009-10-15

    Five new transition metal coordination polymers based on H{sub 2}tzda and co-ligand bpe, {l_brace}[M(tzda)(bpe)].H{sub 2}O{r_brace}{sub n} [M=Zn(1), Cd(2), Mn(3), Co(4)] and [Ni{sub 2}(tzda){sub 2}(bpe){sub 2}(H{sub 2}O)]{sub n} (5) [H{sub 2}tzda=(1,3,4-thiadiazole-2,5-diyldithio)diacetic acid, bpe=1,2-bis(4-pyridyl)ethane], have been hydrothermally synthesized and structurally characterized. Compounds 1-4 feature a 2D-layered architecture generated from [M(tzda)]{sub n} moiety with double-chain structure cross-linking bpe spacers. However, the conformations bpe adopts in 3 and 4 are different from those in 1 and 2 due to the rotation of C-C single bond in bpe. Polymer 5 exhibits an interesting 3D porous framework with 2-fold interpenetration, in which intriguing 1D double helix chains are observed. The photoluminescence properties of 1 and 2 in the solid-state at room temperature are investigated. In addition, variable-temperature magnetic data show weak antiferromagnetic behavior in 3-5. - Graphical abstract: Five new transition metal coordination polymers based on flexible H{sub 2}tzda and bpe have been hydrothermally synthesized and characterized by X-ray diffraction, luminescent emission spectra and low-temperature magnetic measurements, respectively.

  15. 2D Dynamic Models of Subduction: Links between Surface Plate Motion and Deformation in the Transition Zone from Observations of Deep Slab Seismicity

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2015-12-01

    Observations of seismicity and seismic tomography provide constraints on the geometry of slabs within mantle, while compression/tension axis derived from moment tensor solutions provide constraints on the internal deformation of slabs. However, since these observations provide only a somewhat blurred or incomplete snapshot of the slab in time, it is difficult to directly relate these observations to the evolution of the slab geometry and the forces acting on and within the slab. In contrast, plate tectonic reconstructions provide time-dependent constraints on the surface motion of plates and the trench at subduction zones, which are related to the dynamical evolution of the slab. We use 2D geodynamical simulations of subduction to explore the relationship between dynamical process within the deforming slab and the observations of surface plate motion and the state-of-stress in slabs. Specifically we utilize models that include the extended Boussinesq approximation (shear heating and latent heat terms in the energy equation), a layered lithosphere with pyrolite, harzburgite and basalt/eclogite, compositionally-dependent phase transitions, and a composite rheology with yielding. The models employ a weak crustal layer that decouples the overriding and subducting plates and allows for dynamically determined trench motion. Here we show that, 1) multiple phase transitions increase slab folding, 2) ridge push significantly increases trench retreat, and 3) strength of the weak crustal layer influences slab detachment. Compared to past studies a more realistic treatment of the phase transitions makes trench retreat more difficult to generate: a weaker plate may encourage slab retreat but detaches once the slab tip crosses into the transition zone due to the rapid increase in slab density. As suggested by previous studies, slab folding within the transition zone changes the direction of forces on the slab and causes periodic changes from trench retreat to trench advance. We

  16. Critical Slowing of Density Fluctuations Approaching the Isotropic-Nematic Transition in Liquid Crystals: 2D IR Measurements and Mode Coupling Theory.

    PubMed

    Sokolowsky, Kathleen P; Bailey, Heather E; Hoffman, David J; Andersen, Hans C; Fayer, Michael D

    2016-07-21

    Two-dimensional infrared (2D IR) data are presented for a vibrational probe in three nematogens: 4-cyano-4'-pentylbiphenyl, 4-cyano-4'-octylbiphenyl, and 4-(trans-4-amylcyclohexyl)-benzonitrile. The spectral diffusion time constants in all three liquids in the isotropic phase are proportional to [T*/(T - T*)](1/2), where T* is 0.5-1 K below the isotropic-nematic phase transition temperature (TNI). Rescaling to a reduced temperature shows that the decays of the frequency-frequency correlation function (FFCF) for all three nematogens fall on the same curve, suggesting a universal dynamic behavior of nematogens above TNI. Spectral diffusion is complete before significant orientational relaxation in the liquid, as measured by optically heterodyne detected-optical Kerr effect (OHD-OKE) spectroscopy, and before any significant orientational randomization of the probe measured by polarization selective IR pump-probe experiments. To interpret the OHD-OKE and FFCF data, we constructed a mode coupling theory (MCT) schematic model for the relationships among three correlation functions: ϕ1, a correlator for large wave vector density fluctuations; ϕ2, the orientational correlation function whose time derivative is the observable in the OHD-OKE experiment; and ϕ3, the FFCF for the 2D IR experiment. The equations for ϕ1 and ϕ2 match those in the previous MCT schematic model for nematogens, and ϕ3 is coupled to the first two correlators in a straightforward manner. Resulting models fit the data very well. Across liquid crystals, the temperature dependences of the coupling constants show consistent, nonmonotonic behavior. A remarkable change in coupling occurs at ∼5 K above TNI, precisely where the rate of spectral diffusion in 5CB was observed to deviate from that of a similar nonmesogenic liquid. PMID:27363680

  17. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    PubMed Central

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  18. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  19. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    NASA Astrophysics Data System (ADS)

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  20. First-principles study of metal-insulator control by ion adsorption on Ti2C MXene dioxide monolayers

    NASA Astrophysics Data System (ADS)

    Ando, Yasunobu; Watanabe, Satoshi

    2016-01-01

    Through first-principles calculations using density functional theory, we investigate the possibility of controlling the metal-insulator properties of the Ti2C MXene dioxide Ti2CO2 by ion adsorption. Our simulation reveals that Ti2CO2 is insulating with an indirect band gap of 0.44 eV. Upon atomic adsorption of H, Li, or Na, Ti2CO2 becomes metallic. This metal-insulator change may be used to produce switching devices with a high on/off ratio and low energy consumption by controlling ionic movement, as in ion batteries.

  1. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    DOE PAGESBeta

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variablemore » range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.« less

  2. Resistance noise at the metal-insulator transition in thermochromic VO2 films

    NASA Astrophysics Data System (ADS)

    Topalian, Zareh; Li, Shu-Yi; Niklasson, Gunnar A.; Granqvist, Claes G.; Kish, Laszlo B.

    2015-01-01

    Thermochromic VO2 films were prepared by reactive DC magnetron sputtering onto heated sapphire substrates and were used to make 100-nm-thick samples that were 10 μm wide and 100 μm long. The resistance of these samples changed by a factor ˜2000 in the 50 < Ts < 70 °C range of temperature Ts around the "critical" temperature Tc between a low-temperature semiconducting phase and a high-temperature metallic-like phase of VO2. Power density spectra S(f) were extracted for resistance noise around Tc and demonstrated unambiguous 1/f behavior. Data on S(10 Hz)/Rs2 scaled as Rsx, where Rs is sample resistance; the noise exponent x was -2.6 for Ts < Tc and +2.6 for Ts > Tc. These exponents can be reconciled with the Pennetta-Trefán-Reggiani theory [Pennetta et al., Phys. Rev. Lett. 85, 5238 (2000)] for lattice percolation with switching disorder ensuing from random defect generation and healing in steady state. Our work hence highlights the dynamic features of the percolating semiconducting and metallic-like regions around Tc in thermochromic VO2 films.

  3. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    SciTech Connect

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance the binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.

  4. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    DOE PAGESBeta

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance themore » binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.« less

  5. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    NASA Astrophysics Data System (ADS)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  6. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes.

    PubMed

    Lee, Changhwan; Nedrygailov, Ievgen I; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed. PMID:26451470

  7. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes

    NASA Astrophysics Data System (ADS)

    Lee, Changhwan; Nedrygailov, Ievgen I.; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed.

  8. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-01

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination. PMID:26886870

  9. Microrefrigeration by a pair of normal metal/insulator/superconductor junctions

    NASA Technical Reports Server (NTRS)

    Leivo, M. M.; Pekola, J. P.; Averin, D. V.

    1995-01-01

    We suggest and demonstrate experimentally that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistences of 1.0 and 1.1 kOmega is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 micrometers(exp 2) at T = 300 mK. This cooling power density implies that scaling of junction area up to about 1 mm(exp 2) should bring the cooling power into the microW range.

  10. Stability of La2O3 Metal-Insulator-Metal Capacitors under Constant Voltage Stress

    NASA Astrophysics Data System (ADS)

    Shu-Hua Wu,; Chih-Kang Deng,; Tuo-Hung Hou,; Bi-Shiou Chiou,

    2010-04-01

    In this study, we demonstrate the stability of high-κ La2O3 metal-insulator-metal (MIM) capacitors under constant voltage stress (CVS). It was found that the variation in capacitance caused by CVS strongly depends on the injected charges regardless of stress biases. Furthermore, the quadratic voltage coefficient of capacitance (α) decreases with a logarithmic increase in dielectric loss. Charge trapping contributes to the relative capacitance variation under CVS while the reduced carrier mobility due to the stress-induced traps is responsible for the reduction of α. Additionally, high stability of 10-year lifetime is achieved for a 10-nm La2O3 MIM capacitor with an 11.4 fF/μm2 capacitance density.

  11. Stability of La2O3 Metal-Insulator-Metal Capacitors under Constant Voltage Stress

    NASA Astrophysics Data System (ADS)

    Wu, Shu-Hua; Deng, Chih-Kang; Hou, Tuo-Hung; Chiou, Bi-Shiou

    2010-04-01

    In this study, we demonstrate the stability of high-κ La2O3 metal-insulator-metal (MIM) capacitors under constant voltage stress (CVS). It was found that the variation in capacitance caused by CVS strongly depends on the injected charges regardless of stress biases. Furthermore, the quadratic voltage coefficient of capacitance (α) decreases with a logarithmic increase in dielectric loss. Charge trapping contributes to the relative capacitance variation under CVS while the reduced carrier mobility due to the stress-induced traps is responsible for the reduction of α. Additionally, high stability of 10-year lifetime is achieved for a 10-nm La2O3 MIM capacitor with an 11.4 fF/µm2 capacitance density.

  12. Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes

    PubMed Central

    2012-01-01

    In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunneling structure is formed and its optoelectronic properties are studied. The accumulation dark current and inversion photocurrent of the graphene oxide device are superior to the control device. The introduction of graphene oxide improves the rectifying characteristic of the diode and enhances its responsivity as a photodetector. At 2 V, the photo-to-dark current ratio of the graphene oxide device is 24, larger than the value of 15 measured in the control device. PMID:22734469

  13. Detuned Plasmonic Bragg Grating Sensor Based on a Defect Metal-Insulator-Metal Waveguide

    PubMed Central

    Qu, Shinian; Song, Ci; Xia, Xiushan; Liang, Xiuye; Tang, Baojie; Hu, Zheng-Da; Wang, Jicheng

    2016-01-01

    A nanoscale Bragg grating reflector based on the defect metal-insulator-metal (MIM) waveguide is developed and numerically simulated by using the finite element method (FEM). The MIM-based structure promises a highly tunable broad stop-band in transmission spectra. The narrow transmission window is shown to appear in the previous stop-band by changing the certain geometrical parameters. The central wavelengths can be controlled easily by altering the geographical parameters. The development of surface plasmon polarition (SPP) technology in metallic waveguide structures leads to more possibilities of controlling light at deep sub-wavelengths. Its attractive ability of breaking the diffraction limit contributes to the design of optical sensors. PMID:27240381

  14. Densely-tiled metal-insulator-metal metamaterial resonators with quasi- monochromatic thermal emission.

    PubMed

    Ito, Kota; Toshiyoshi, Hiroshi; Iizuka, Hideo

    2016-06-13

    Metal-insulator-metal metamaterial thermal emitters strongly radiate at multiple resonant wavelengths. The fundamental mode, whose wavelength is the longest among resonances, is generally utilized for selective emission. In this paper, we show that parasitic modes at shorter wavelengths are suppressed by newly employed densely-tiled resonators, and that the suppression enables quasi-monochromatic thermal emission. The second-order harmonics, which is excited at half the fundamental wavelength in conventional emitters, shifts toward shorter wavelength. The blue-shift reduces the amplitude of the second-order emission by taking a distance from the Wien wavelength. Other parasitic modes are eliminated by the small spacing between resonators. The densely-tiled resonators are fabricated, and the measured emission spectra agree well with numerical simulations. The methodology presented here for the suppression of parasitic modes adds flexibility to metamaterial thermal emitters. PMID:27410299

  15. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

    SciTech Connect

    Alimardani, Nasir; Conley, John F.

    2014-08-25

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.

  16. Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Yu, Hao; Schaekers, Marc; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron Voon-Yew; De Meyer, Kristin

    2016-04-01

    Applying simulations and experiments, this paper systematically compares contact resistivities (ρc) of metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) contacts with various semiconductor doping concentrations (Nd). Compared with the MS contacts, the MIS contacts with the low Schottky barrier height are more beneficial for ρc on semiconductors with low Nd, but this benefit diminishes gradually when Nd increases. With high Nd, we find that even an "ideal" MIS contact with optimized parameters cannot outperform the MS contact. As a result, the MIS contacts mainly apply to devices that use relatively low doped semiconductors, while we need to focus on the MS contacts to meet the sub-1 × 10-8 Ω cm2 ρc requirement for future Complementary Metal-Oxide-Semiconductor (CMOS) technology.

  17. Metal-insulator crossover behavior at the surface of NiS2

    NASA Astrophysics Data System (ADS)

    Sarma, D. D.; Krishnakumar, S. R.; Weschke, E.; Schüßler-Langeheine, C.; Mazumdar, Chandan; Kilian, L.; Kaindl, G.; Mamiya, K.; Fujimori, S.-I.; Fujimori, A.; Miyadai, T.

    2003-04-01

    We have performed a detailed high-resolution electron spectroscopic investigation of NiS2 and related Se-substituted compounds, NiS2-xSex, which are known to be gapped insulators in the bulk at all temperatures. A large spectral weight at the Fermi energy of the room temperature spectrum, in conjunction with the extreme surface sensitivity of the experimental probe, however, suggests that the surface layer is metallic at about 300 K. Interestingly, the evolution of the spectral function with decreasing temperature is characterized by a continuous depletion of the single-particle spectral weight at the Fermi energy and the development of a gap-like structure below a characteristic temperature, providing evidence for a metal-insulator crossover behavior at the surfaces of NiS2 and of related compounds. These results provide a consistent description of the unusual transport properties observed in these systems.

  18. Magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect

    NASA Astrophysics Data System (ADS)

    Zhou, X.; Ma, L.; Shi, Z.; Fan, W. J.; Zheng, Jian-Guo; Evans, R. F. L.; Zhou, S. M.

    2015-08-01

    We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic γ -IrMn3/Y3Fe5O12(YIG ) and Pt/YIG heterostructures. For γ -IrMn3/YIG , the EAMR and the AHLE resistivity change sign with temperature due to the competition between the spin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE) induced by the interfacial antiferromagnetic uncompensated magnetic moment. In contrast, for Pt/YIG, the AHLE resistivity changes sign with temperature whereas no sign change is observed in the EAMR. This is because the MPE and the SMR play a dominant role in the AHLE and the EAMR, respectively. As different types of galvanomagnetic properties, the AHLE and the EAMR have proved vital in disentangling the MPE and the SMR in metal/insulating-ferromagnet heterostructures.

  19. Investigation of 90° submicrometer radius bends of metal-insulator-silicon-insulator-metal waveguides.

    PubMed

    Kwon, Min-Suk; Shin, Jin-Soo

    2014-02-01

    We theoretically and experimentally investigate 90° submicrometer radius bends (SRB) of metal-insulator-silicon-insulator-metal (MISIM) waveguides that are plasmonic waveguides fabricated with standard CMOS technology. We focus on the bends of MISIM waveguides with a wide (e.g., 160-220 nm) silicon line. This study shows that the bend efficiently turns the direction of the MISIM waveguide by 90° if its radius is about 0.7 μm. Moreover, we discuss the fact that the bend may be superior to a SRB of a silicon photonic waveguide when it is used to implement a ring resonator with a high quality factor and small volume. PMID:24487907

  20. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    NASA Astrophysics Data System (ADS)

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-08-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  1. Detuned Plasmonic Bragg Grating Sensor Based on a Defect Metal-Insulator-Metal Waveguide.

    PubMed

    Qu, Shinian; Song, Ci; Xia, Xiushan; Liang, Xiuye; Tang, Baojie; Hu, Zheng-Da; Wang, Jicheng

    2016-01-01

    A nanoscale Bragg grating reflector based on the defect metal-insulator-metal (MIM) waveguide is developed and numerically simulated by using the finite element method (FEM). The MIM-based structure promises a highly tunable broad stop-band in transmission spectra. The narrow transmission window is shown to appear in the previous stop-band by changing the certain geometrical parameters. The central wavelengths can be controlled easily by altering the geographical parameters. The development of surface plasmon polarition (SPP) technology in metallic waveguide structures leads to more possibilities of controlling light at deep sub-wavelengths. Its attractive ability of breaking the diffraction limit contributes to the design of optical sensors. PMID:27240381

  2. Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

    NASA Astrophysics Data System (ADS)

    Lu, Tingyu; Zhou, Jun; Nakayama, Tsuneyoshi; Yang, Ronggui; Li, Baowen

    2016-02-01

    We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992), 10.1103/PhysRevLett.68.1563] and most recently by Hohensee et al. [Nat. Commun. 6, 6578 (2015), 10.1038/ncomms7578].

  3. Metal-Insulator-Semiconductor (MIS) Structure with AlN Dielectric

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Cheong, K. Y.

    2009-06-01

    In this paper, we present the study of the structural and electrical properties of AlN/GaN thin films grown on Si (111) substrates by plasma-assisted molecular beam epitaxy (RF-MBE) with AlN buffer layer. The performance of aluminum nitride (AlN) as insulator and aluminum (Al) contacts is presented. The thickness of GaN film and AlN insulating film as seen from SEM cross section are about 357.3 nm and 63.38 nm respectively. The presence of Ga, Al and N are confirmed by energy dispersive X-ray (EDX) measurement. The X-ray diffraction (XRD) measurement reveals that the samples are all wurtzite hexagonal AlN and GaN structure. The fabricated metal-insulator-semiconductor (MIS) structure was characterized using capacitance-voltage (C-V) measurements.

  4. Electrical Characteristics and Interface Properties of III Nitride-Based Metal-Insulator-Semiconductor Structure

    SciTech Connect

    Mahyuddin, A.; Hassan, Z.; Yusof, Y.; Cheong, K. Y.

    2010-07-07

    In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high resolution x-ray diffraction (HRXRD), capacitance-voltage (C-V) and current-voltage (I-V) measurements. The value of flat-band voltage was -0.7 V. A total fixed oxide charge density of 2.73x10{sup 11} cm{sup -2} was estimated. Terman's method was used to obtain the density of interface state in the MIS structure. The analysis showed low interface state density values of 3.66x10{sup 11} cm{sup -2} eV{sup -1}.

  5. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  6. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

    SciTech Connect

    Golubev, Dmitri; Kuzmin, Leonid

    2001-06-01

    The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. {copyright} 2001 American Institute of Physics.

  7. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    PubMed Central

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  8. 1,25(OH)2D3 attenuates TGF-β1/β2-induced increased migration and invasion via inhibiting epithelial-mesenchymal transition in colon cancer cells.

    PubMed

    Chen, Shanwen; Zhu, Jing; Zuo, Shuai; Ma, Ju; Zhang, Junling; Chen, Guowei; Wang, Xin; Pan, Yisheng; Liu, Yucun; Wang, Pengyuan

    1,25-Dihydroxyvitamin D3 (1,25(OH)2D3) has been reported to inhibit proliferation and migration of multiple types of cancer cells. However, the mechanism underlying its anti-metastasis effect is not fully illustrated. In this study, the effect of 1,25(OH)2D3 on TGF-β1/β2-induced epithelial-mesenchymal transition (EMT) is tested in colon cancer cells. The results suggest that 1,25(OH)2D3 inhibited TGF-β1/β2-induced increased invasion and migration of in SW-480 and HT-29 cells. 1,25(OH)2D3 also inhibited the cadherin switch in SW-480 and HT-29 cells. TGF-β1/β2-induced increased expression of EMT-related transcription factors was also inhibited by 1,25(OH)2D3. 1,25(OH)2D3 also inhibited the secretion of MMP-2 and MMP-9 and increased expression of F-actin induced by TGF-β1/β2 in SW-480 cells. Taken together, this study suggests that the suppression of EMT might be one of the mechanisms underlying the anti-metastasis effect of 1,25(OH)2D3 in colon cancer cells. PMID:26523511

  9. Massive Temperature-Induced Metal—Insulator Transition in Individual Nanowires of a Non-Stoichiometric Vanadium Oxide Bronze

    SciTech Connect

    Patridge, C.; Wu, T; Jaye, C; Ravel, B; Takeuchi, E; Fischer, D; Sambandamurthy, G; Banerjee, S

    2010-01-01

    Metal-insulator transitions in strongly correlated materials, induced by varying either temperature or dopant concentration, remain a topic of enduring interest in solid-state chemistry and physics owing to their fundamental importance in answering longstanding questions regarding correlation effects. We note here the unprecedented observation of a four-orders-of-magnitude metal-insulator transition in single nanowires of {delta}-K{sub x}V{sub 2}O{sub 5}, when temperature is varied, which thus represents a rare new addition to the pantheon of materials exhibiting pronounced metal-insulator transitions in proximity to room temperature.

  10. Exciton and electron transport in metal oxide and metal-insulator nanostructures

    NASA Astrophysics Data System (ADS)

    Hess, Wayne; Joly, Alan; Halliday, Matthew; Shluger, Alexander; Sushko, Peter

    2014-03-01

    Understanding the dynamics of electronic excited states in solids is essential to forming mechanistic models relevant to electron and energy transport in materials. Irradiation of materials by ultraviolet (UV) photons, produces energetic species such as holes and free electrons, that relax to form electron-hole pairs and excitons capable of driving surface and bulk reactions such as atomic desorption. Photostimulated desorption experiments, when combined with ab-initio calculations, can be used to develop models for exciton transport and subsequent excited state dynamics. We use pulsed UV lasers to excite specific surface and bulk states of nano-structured metal oxides and measure velocities of desorbed atoms under controlled conditions. By measuring O-atom kinetic energy distributions, as a function of laser frequency, we demonstrate exciton transport on the surface and in the bulk of metal-oxides. We further interrogate electron and exciton dynamics at the metal-insulator interface of thin CsBr films grown on Cu(100). Photoexcitation at 6.4 eV specifically excites the CsBr surface exciton which leads to desorption of neutral Br-atoms with hyperthermal kinetic energies. In dramatic contrast, we observe thermal energy Br atoms from CsBr grown on Cu. The hyperthermal desorption channel is entirely quenched for UV laser desorption of Br atoms even for thick (>60 nm) CsBr films on Cu. Possible models for electron transport and exciton relaxation will be discussed.

  11. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  12. Photoelectric energy conversion of plasmon-generated hot carriers in metal-insulator-semiconductor structures.

    PubMed

    García de Arquer, F Pelayo; Mihi, Agustín; Kufer, Dominik; Konstantatos, Gerasimos

    2013-04-23

    Plasmonic excitation in metals has received great attention for light localization and control of light-matter interactions at the nanoscale with a plethora of applications in absorption enhancement, surface-enhanced Raman scattering, or biosensing. Electrically active plasmonic devices, which had remained underexplored, have recently become a growing field of interest. In this report we introduce a metal-insulator-semiconductor heterostructure for plasmo-electric energy conversion, a novel architecture to harvest hot-electrons derived from plasmonic excitations. We demonstrate external quantum efficiency (EQE) of 4% at 460 nm using a Ag nanostructured electrode and EQE of 1.3% at 550 nm employing a Au nanostructured electrode. The insulator interfacial layer has been found to play a crucial role in interface passivation, a requisite in photovoltaic applications to achieving both high open-circuit voltages (0.5 V) and fill-factors (0.5), but its introduction simultaneously modifies hot-electron injection and transport. We investigate the influence passivation has on these processes for different material configurations, and characterize different types of transport depending on the initial plasmon energy band, reporting power conversion efficiencies of 0.03% for nanopatterned silver electrodes. PMID:23495769

  13. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  14. Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Dimoulas, A.; Vellianitis, G.; Mavrou, G.; Evangelou, E. K.; Sotiropoulos, A.

    2005-05-01

    Germanium metal-insulator-semiconductor capacitors with HfO2 or other high-κ gate dielectrics show unusual low frequency behavior of the high frequency (1 kHz or higher) capacitance-voltage characteristics when biased in inversion. Here, we provide evidence that this effect is partly due to the high intrinsic carrier concentration ni in Ge. We show in particular that the ac conductance in inversion is thermally activated and it is governed either by generation-recombination processes in depletion, varying proportional to ni or by diffusion-limited processes varying as ni2, depending on whether the temperature is below or above 45 °C, respectively. From these measurements, we also show that the minority carrier response time in Ge is very short, in the microsecond range (much shorter than in Si), depending inversely proportional to ni at room temperature. This means that due to high ni, the inversion charge is built fast in response to high frequency signals at the gate, inducing the observed low frequency behavior.

  15. Nitride-Based UV Metal-Insulator-Semiconductor Photodetector with Liquid-Phase-Deposition Oxide

    NASA Astrophysics Data System (ADS)

    Hwang, J. D.; Yang, Gwo Huei; Yang, Yuan Yi; Yao, Pin Cuan

    2005-11-01

    A low-temperature (30-40°C), low-cost and reliable method of liquid phase deposition (LPD) has been employed to grow SiO2 layers on GaN. The LPD process uses a supersaturated acid aqueous solution of hydrofluosilicic (H2SiF6) as a source liquid and an aqueous solution of boric acid (H3BO3) as a deposition rate controller. In this study, the LPD SiO2 was prepared at 40°C with concentrations of H2SiF6 and H3BO3 at 0.2 and 0.01 M, respectively. The minimum interface-trap density, Dit, of a metal-insulator-semiconductor (MIS) capacitor with a structure of Al/20 nm LPD-SiO2/n-GaN was estimated to be 8.4× 1011 cm-2 V-1. Furthermore, a MIS photodetector with a 10-nm-thick LPD-SiO2 layer has been fabricated successfully. The dark current density was as low as 4.41× 10-6 A/cm2 for an applied field of 4 MV/cm. A maximum responsivity of 0.112 A/W was observed for incident ultraviolet light of 366 nm with an intensity of 4.15 mW/cm2. Defect-assisted tunneling was invoked to explain these results.

  16. Strains and photovoltaic response in Ta-sputtered Si metal-insulator-semiconductor solar cells

    NASA Astrophysics Data System (ADS)

    Lalevic, B.; Murty, K.; Ito, T.; Kalman, Z. H.; Weissmann, S.

    1981-07-01

    Deformation by bending of Si or Si-SiO2 wafers is achieved by sputter deposition of tantalum films. Strains induced at Si-SiO2 interface and in Ta films are investigated using a combination of X-ray diffraction, electron diffraction, and transmission electron microscopy. Thin Ta film deposits are found to have predominantly a fcc structure, while thicker films have the normal bcc structure with certain admixture of fcc. Film strains generated by the coexistence of the polymorph structure are accommodated by formation of misfit dislocations at the film-Si substrate interface. The effect of the induced stress on the electronic parameters characterizing the Si-SiO2 interface is studied in the metal-oxide-semiconductor structure, and for the effect on photovoltaic response a metal-insulator-semiconductor solar cell configuration is used. Large changes with increasing stress are observed in the values of recombination time, capture cross section, and diffusion length and in sharply decreased conversion efficiency, fill factor, open-circuit voltage, and short-circuit current.

  17. Effects of Atomic Scale Roughness at Metal/insulator Interfaces on Metal Work Function

    SciTech Connect

    Ling, Sanliang; Watkins, M. B.; Shlyuger, Alexander L.

    2013-09-26

    We evaluate the performance of different van der Waals (vdW) corrected density functional theory (DFT) methods in predicting the structure of perfect interfaces between the LiF(001), MgO(001), NiO(001) films on the Ag(001) surface and the resulting work function shift of Ag(001). The results demonstrate that including the van der Waals interaction is important for obtaining accurate interface structures and the metal work function shift. The work function shift results from a subtle interplay of several effects strongly affected by even small changes in the interface geometry. This makes the accuracy of theoretical methods insufficient for predicting the shift values better than within 0.2 eV. Most of the existing van der Waals corrected functionals are not particularly suited for studying metal/insulator interfaces. The lack of accurate experimental data on the interface geometries and surface rumpling of insulators hampers the calibration of existing and novel density functionals.

  18. An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation.

    PubMed

    Hill, James C; Landers, Alan T; Switzer, Jay A

    2015-11-01

    The photoelectrochemical splitting of water into hydrogen and oxygen requires a semiconductor to absorb light and generate electron-hole pairs, and a catalyst to enhance the kinetics of electron transfer between the semiconductor and solution. A crucial question is how this catalyst affects the band bending in the semiconductor, and, therefore, the photovoltage of the cell. We introduce a simple and inexpensive electrodeposition method to produce an efficient n-Si/SiOx/Co/CoOOH photoanode for the photoelectrochemical oxidation of water to oxygen. The photoanode functions as a solid-state, metal-insulator-semiconductor photovoltaic cell with spatially non-uniform barrier heights in series with a low overpotential water-splitting electrochemical cell. The barrier height is a function of the Co coverage; it increases from 0.74 eV for a thick, continuous film to 0.91 eV for a thin, inhomogeneous film that has not reached coalescence. The larger barrier height leads to a 360 mV photovoltage enhancement relative to a solid-state Schottky barrier. PMID:26366847

  19. An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation

    NASA Astrophysics Data System (ADS)

    Hill, James C.; Landers, Alan T.; Switzer, Jay A.

    2015-11-01

    The photoelectrochemical splitting of water into hydrogen and oxygen requires a semiconductor to absorb light and generate electron-hole pairs, and a catalyst to enhance the kinetics of electron transfer between the semiconductor and solution. A crucial question is how this catalyst affects the band bending in the semiconductor, and, therefore, the photovoltage of the cell. We introduce a simple and inexpensive electrodeposition method to produce an efficient n-Si/SiOx/Co/CoOOH photoanode for the photoelectrochemical oxidation of water to oxygen. The photoanode functions as a solid-state, metal-insulator-semiconductor photovoltaic cell with spatially non-uniform barrier heights in series with a low overpotential water-splitting electrochemical cell. The barrier height is a function of the Co coverage; it increases from 0.74 eV for a thick, continuous film to 0.91 eV for a thin, inhomogeneous film that has not reached coalescence. The larger barrier height leads to a 360 mV photovoltage enhancement relative to a solid-state Schottky barrier.

  20. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  1. Elastoplasmonic interaction in metal-insulator-metal localized surface plasmon systems

    NASA Astrophysics Data System (ADS)

    Mrabti, Abdelali; Lévêque, Gaëtan; Akjouj, Abdellatif; Pennec, Yan; Djafari-Rouhani, Bahram; Nicolas, Rana; Maurer, Thomas; Adam, Pierre-Michel

    2016-08-01

    We investigate theoretically and numerically the coupling between elastic and localized surface plasmon modes in a system of gold nanocylinders separated from a thin gold film by a dielectric spacer of few nanometers thickness. That system supports plasmon modes confined in between the bottom of the nanocylinder and the top of the gold film, which arise from the formation of interference patterns by short-wavelength metal-insulator-metal propagating plasmon. First, we present the plasmonic properties of the system though computer-simulated extinction spectra and field maps associated to the different optical modes. Next, a simple analytical model is introduced, which allows to correctly reproduce the shape and wavelengths of the plasmon modes. This model is used to investigate the efficiency of the coupling between an elastic deformation and the plasmonic modes. In the last part of the paper, we present the full numerical simulations of the elastic properties of the system, and then compute the acousto-plasmonic coupling between the different plasmon modes and five acoustic modes of very different shape. The efficiency of the coupling is assessed first by evaluating the modulation of the resonance wavelength, which allows comparison with the analytical model, and finally in term of time-modulation of the transmission spectra on the full visible range, computed for realistic values of the deformation of the nanoparticle.

  2. Magnetic modulation of surface plasmon modes in magnetoplasmonic metal-insulator-metal cavities.

    PubMed

    Ferreiro-Vila, E; García-Martín, J M; Cebollada, A; Armelles, G; González, M U

    2013-02-25

    The magnetic modulation of the surface plasmon-polariton (SPP) wavevector is experimentally and theoretically studied for the plasmonic modes excited in metal-insulator-metal (MIM) magnetoplasmonic cavities. For this purpose, Ag/SiO₂/Ag multilayers with different SiO₂ layer thickness in which a thin Co layer is positioned near the top Ag/SiO₂ interface, near the bottom SiO₂/Ag one, or near both of them, are studied. The magnetoplasmonic MIM cavities present symmetric (SM) and antisymmetric (AM) plasmonic modes, of different wavevector and electromagnetic field profiles inside the MIM cavity. We show that the magnetic SPP wavevector modulation strongly depends on which mode is considered, the cavity thickness, and the number and specific location of Co layers within the structure. With only one ferromagnetic layer, a net modulation is obtained, of higher magnitude as we reduce the SiO₂ layer thickness. The introduction of a second Co layer in the structure reduces the modulation due to the non-reciprocal character of SPP modes under an applied magnetic field. Moreover, we demonstrate that the non-reciprocal nature of the SPP modulation can be experimentally visualized in the magnetic hysteresis loops under plasmon excitation conditions by using two Co layers with different magnetization switching fields. PMID:23482025

  3. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  4. Thin-film palladium and silver alloys and layers for metal-insulator-semiconductor sensors

    NASA Astrophysics Data System (ADS)

    Hughes, R. C.; Schubert, W. K.; Zipperian, T. E.; Rodriguez, J. L.; Plut, T. A.

    1987-08-01

    The addition of Ag to Pd in the gate metal of a metal-insulator-semiconductor gas sensing diode can improve the performance and change the selectivity of the sensors for a variety of reactions. Data on the response of diodes with 12 different ratios of Ag to Pd in alloys and layers of Pd and Ag to hydrogen and other gases are reported. Diodes with as much as 32% Ag respond very well to H2 gas and the films are much more durable to high hydrogen exposure than pure Pd films. Improvements in the rate of response and aging behavior are found for certain Ag combinations; others give poorer performance. The presence of Ag on the surface changes the catalytic activity in some cases and examples of H2 mixed with O2 and/or NO2, propylene oxide, ethylene, and formic acid are given. Such selectivity forms the basis for miniature chemical sensor arrays which could analyze complex gas mixtures.

  5. Scaling behavior and surface-plasmon modes in metal-insulator composites

    NASA Astrophysics Data System (ADS)

    Koss, R. S.; Stroud, D.

    1987-06-01

    The ac dielectric response of metal-insulator composites is studied numerically, using the transfer-matrix algorithm of Derrida and Vannimenus. For two-dimensional random composites with site percolation, we verify numerically that the effective dielectric function can be written numerically in the form ɛe/ɛ1=ξ-t/νG+/-((ɛ2/ɛ1)ξ(t+s)/νξ/L, where ɛ1 and ɛ2 are the dielectric functions, ξ is the correlation length, L is the system size (or wavelength of the electric field), G+ and G- are universal functions above and below percolation, and t, s, and ν are standard percolation exponents. A similar form has been previously verified for bond percolation by Bug et al. We also study surface-plasmon resonances in a two-dimensional lattice model of a composite of Drude metal and insulator. The effective conductivity of the composite in this case is found to consist of a Drude peak which disappears below the metal percolation threshold, plus a band of surface-plasmon states separated from zero frequency by a gap which appears to vanish near the percolation threshold. The results in this case agree qualitatively with effective-medium predictions. The potential relation of these results to experiment, and the possibility of a Lifshitz tail in the surface-plasmon density of states, are briefly discussed.

  6. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  7. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  8. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil

    NASA Astrophysics Data System (ADS)

    Yang, D. G.; Choi, Y. H.; Kim, Y. G.; Song, J. B.; Lee, H. G.

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25Ic), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid.

  9. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil.

    PubMed

    Yang, D G; Choi, Y H; Kim, Y G; Song, J B; Lee, H G

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25I(c)), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid. PMID:27036797

  10. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    NASA Astrophysics Data System (ADS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-12-01

    Electron doped SrTiO3, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO3 systems show reasonably strong rectification even when SrTiO3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlOx in between the metal and n-SrTiO3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO3) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO3. The non-linear permittivity of n-SrTiO3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  11. Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Jing, YouLiang; Li, ZhiFeng; Li, Qian; Chen, PingPing; Zhou, XiaoHao; Wang, Han; Li, Ning; Lu, Wei

    2016-04-01

    We report the dependence of the near-field optical modes in metal-insulator-metal quantum well infrared photodetector (MIM-QWIP) on the incident angles. Three optical modes are observed and attributed to the 2nd- and the 3rd-order surface plasmon polariton (SPP) modes and the localized surface polariton (LSP) mode. In addition to the observation of a responsivity enhancement of 14 times by the LSP mode, the varying pattern of the three modes against the incident angle are revealed, in which the LSP mode is fixed while the 2nd SPP mode splits into two branches and the 3rd SPP mode red-shifts. The detailed mechanisms are analyzed and numerically simulated. The results fit the experiments very well, demonstrating the wavevector coupling effect between the incident light and the metal gratings on the SPP modes. Our work will pave the way to fully understanding the influence of incident angles on a detector's response for applying the MIM-QWIP to focal plane arrays.

  12. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-01

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO2/a-Si:H and Al2O3/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+) contacts, with SiO2 thicknesses of ˜1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρc of ˜3 mΩ cm2 and a recombination current density J0c of ˜40 fA/cm2. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  13. Numerical study of optical absorption in two-dimensional metal-insulator and normal-superconductor composites

    SciTech Connect

    Zeng, X.C.; Hui, P.M.; Stroud, D.

    1989-01-15

    We analyze a random resistor-inductor-capacitor (RLC) lattice model for the optical properties of a two-dimensional normal-metal--insulator composite, using the Y-..delta.. transformation algorithm developed by Frank and Lobb. Within such a model, the surface plasmon resonances of a Drude-metal--insulator composite are modeled by the ac resonances of a random RLC network. The real part of the effective conductance is found to show a broad surface plasmon resonance peak below and above the metal percolation threshold, and a Drude peak above the threshold. An effective-medium-approximation (EMA) calculation is in excellent agreement with the results of the simulations. We also calculate the far-infrared absorption in a model composite of normal metal and superconductor, using a lattice model. The absorption shows a strong absorption below the superconducting energy gap. An approximate calculation based on the EMA is again in excellent agreement with these results.

  14. High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

    NASA Astrophysics Data System (ADS)

    Jorel, C.; Vallée, C.; Gonon, P.; Gourvest, E.; Dubarry, C.; Defay, E.

    2009-06-01

    Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (α). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite α, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of -60 ppm/V2 associated with a density of 11.5 fF/μm2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.

  15. Improved Stress Reliability of Analog TiHfO Metal-Insulator-Metal Capacitors Using High-Work-Function Electrode

    NASA Astrophysics Data System (ADS)

    Cheng, Chun-Hu; Chiang, Kuo-Cheng; Pan, Han-Chang; Hsiao, Chien-Nan; Chou, Chang-Pin; McAlister, Sean P.; Chin, Albert

    2007-11-01

    We have studied the reliability of high-κ (κ ˜ 49) TixHf1-xO (x ˜ 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.

  16. Random Field Driven Spatial Complexity at the Mott Transition in VO2

    NASA Astrophysics Data System (ADS)

    Carlson, Erica; Liu, Shuo; Phillabaum, Benjamin; Dahmen, Karin; Vidhyadhiraja, Narsimhamurthy; Qazilbash, Mumtaz; Basov, Dimitri

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

  17. Mott Quantum Criticality in the Anisotropic 2D Hubbard Model

    NASA Astrophysics Data System (ADS)

    Lenz, Benjamin; Manmana, Salvatore R.; Pruschke, Thomas; Assaad, Fakher F.; Raczkowski, Marcin

    2016-02-01

    We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory, the interchain hopping t⊥ acts as a control parameter driving the second-order critical end point Tc of the metal-insulator transition down to zero at t⊥c/t ≃0.2 . Below t⊥c, the volume of the hole and electron Fermi pockets of a compensated metal vanishes continuously at the Mott transition. Above t⊥c, the volume reduction of the pockets is cut off by a first-order transition. We discuss the relevance of our findings to a putative quantum critical point in layered organic conductors, whose location remains elusive so far.

  18. Mott Quantum Criticality in the Anisotropic 2D Hubbard Model.

    PubMed

    Lenz, Benjamin; Manmana, Salvatore R; Pruschke, Thomas; Assaad, Fakher F; Raczkowski, Marcin

    2016-02-26

    We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory, the interchain hopping t_{⊥} acts as a control parameter driving the second-order critical end point T_{c} of the metal-insulator transition down to zero at t_{⊥}^{c}/t≃0.2. Below t_{⊥}^{c}, the volume of the hole and electron Fermi pockets of a compensated metal vanishes continuously at the Mott transition. Above t_{⊥}^{c}, the volume reduction of the pockets is cut off by a first-order transition. We discuss the relevance of our findings to a putative quantum critical point in layered organic conductors, whose location remains elusive so far. PMID:26967431

  19. Hartree-Fock Solutions of 2d Interacting Tight-Binding Electrons: Mott Properties and Room Temperature Superconductivity Indications

    NASA Astrophysics Data System (ADS)

    Cabo Montes de Oca, A.; March, N. H.; Cabo-Bizet, A.

    2014-12-01

    Former results for a tight-binding (TB) model of CuO planes in La2CuO4 are reinterpreted here to underline their wider implications. It is noted that physical systems being appropriately described by the TB model can exhibit the main strongly correlated electron system (SCES) properties, when they are solved in the HF approximation, by also allowing crystal symmetry breaking effects and noncollinear spin orientations of the HF orbitals. It is argued how a simple 2D square lattice system of Coulomb interacting electrons can exhibit insulator gaps and pseudogap states, and quantum phase transitions as illustrated by the mentioned former works. A discussion is also presented here indicating the possibility of attaining room temperature superconductivity, by means of a surface coating with water molecules of cleaved planes of graphite, being orthogonal to its c-axis. The possibility that 2D arrays of quantum dots can give rise to the same effect is also proposed to consideration. The analysis also furnishes theoretical insight to solve the Mott-Slater debate, at least for the La2CuO4 and TMO band structures. The idea is to apply a properly noncollinear GW scheme to the electronic structure calculation of these materials. The fact is that the GW approach can be viewed as a HF procedure in which the screening polarization is also determined. This directly indicates the possibility of predicting the assumed dielectric constant in the previous works. Thus, the results seem to identify that the main correlation properties in these materials are determined by screening. Finally, the conclusions also seem to be of help for the description of the experimental observations of metal-insulator transitions and Mott properties in atoms trapped in planar photonic lattices.

  20. Metal-insulator-metal diodes towards THz and optical energy harvesting: Development of materials design principles

    NASA Astrophysics Data System (ADS)

    Periasamy, Prakash

    Metal-Insulator-Metal (MIM) structures are attractive candidates for high-frequency rectification applications such as THz imaging and sensors, and infrared/visible energy harvesting (rectenna) devices. This thesis develops materials selection principles to guide the choice of material pairs for MIM stacks with desired rectification performance. In particular, a first-of-its kind MIM materials space map is developed that correlates materials properties to rectification performance for different MIM combinations. The materials space diagram is generated based on systematic experimental studies that explore the role of both the metals and the insulator in the MIM stack in determining MIM device performance by evaluating the current-voltage response of a combinatorial set of MIM materials at low frequencies. A novel modified point-contact geometry is developed to rapidly examine a number of MIM material combinations. Material properties such as work function (phiM) of the metals and electron affinity (chi) of the insulator, as well as the thermodynamic chemical stability of the interface are identified as crucial elements for MIM materials selection. Investigations performed to identify the role of metals revealed that it is sufficient to choose the metals such that their Deltaphi is > ~ 300 meV to achieve desired rectification characteristics (high asymmetry and nonlinearity). Using the Nb/Nb2O5 bilayer as the model system, the asymmetry and the nonlinearity were found to be only weakly dependent on Deltaphi above ˜ 0.4 eV. A hypothesis is developed and tested that guides the insulator selection criteria. The proposed hypothesis states that, "to minimize the turn-on voltage and maximize asymmetry and nonlinearity, the electron affinity of the insulator should be close to one of the metal work function values so as to produce a low barrier height". Although the study validated the hypothesis across the material systems studied, preliminary experiments on two

  1. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  2. Observation of the hyperfine structure of the {sup 2}S{sub 1/2}-{sup 2}D{sub 5/2} transition in {sup 87}Sr{sup +}

    SciTech Connect

    Barwood, G.P.; Gao, K.; Gill, P.; Huang, G.; Klein, H.A.

    2003-01-01

    The hyperfine structure of the {sup 2}S{sub 1/2}-{sup 2}D{sub 5/2} quadrupole transition at 674 nm in {sup 87}Sr{sup +} has been observed. The ion was confined in a Paul trap and cooled using laser radiation at 422 and 1092 nm. The quadrupole transition was observed by monitoring quantum jumps in the 422-nm fluorescence. The odd isotope of strontium has 'clock' transitions independent of the first-order Zeeman shift and the {sup 2}D{sub 5/2} state hyperfine structure constants have been determined as A{sub D{sub 5/2}}=2.1743(14) MHz and B{sub D{sub 5/2}}=49.11(6) MHz. Standard uncertainties have been added in parentheses. These values allow the second-order Zeeman shifts to be calculated. The {sup 88}Sr{sup +}-{sup 87}Sr{sup +} isotope shift for the 674-nm quadrupole transition has been measured to be 247.99(4) MHz.

  3. The Langley Stability and Transition Analysis Code (LASTRAC) : LST, Linear and Nonlinear PSE for 2-D, Axisymmetric, and Infinite Swept Wing Boundary Layers

    NASA Technical Reports Server (NTRS)

    Chang, Chau-Lyan

    2003-01-01

    During the past two decades, our understanding of laminar-turbulent transition flow physics has advanced significantly owing to, in a large part, the NASA program support such as the National Aerospace Plane (NASP), High-speed Civil Transport (HSCT), and Advanced Subsonic Technology (AST). Experimental, theoretical, as well as computational efforts on various issues such as receptivity and linear and nonlinear evolution of instability waves take part in broadening our knowledge base for this intricate flow phenomenon. Despite all these advances, transition prediction remains a nontrivial task for engineers due to the lack of a widely available, robust, and efficient prediction tool. The design and development of the LASTRAC code is aimed at providing one such engineering tool that is easy to use and yet capable of dealing with a broad range of transition related issues. LASTRAC was written from scratch based on the state-of-the-art numerical methods for stability analysis and modem software technologies. At low fidelity, it allows users to perform linear stability analysis and N-factor transition correlation for a broad range of flow regimes and configurations by using either the linear stability theory (LST) or linear parabolized stability equations (LPSE) method. At high fidelity, users may use nonlinear PSE to track finite-amplitude disturbances until the skin friction rise. Coupled with the built-in receptivity model that is currently under development, the nonlinear PSE method offers a synergistic approach to predict transition onset for a given disturbance environment based on first principles. This paper describes the governing equations, numerical methods, code development, and case studies for the current release of LASTRAC. Practical applications of LASTRAC are demonstrated for linear stability calculations, N-factor transition correlation, non-linear breakdown simulations, and controls of stationary crossflow instability in supersonic swept wing boundary

  4. Performance evaluation of a metal-insulator-metal surface plasmon resonance optical gas sensor under the effect of Gaussian beams.

    PubMed

    Anous, Noha H; Khalil, Diaa A

    2014-04-10

    In this work, the performance of a nonconventional IR surface plasmon resonance (SPR) gas sensor structure based on the use of a metal-insulator-metal (MIM) structure is studied. This MIM-based sensor structure gives enhanced performance five times better than the conventional MI SPR optical gas sensors. The performance of the SPR gas sensors is studied under the effect of oblique incident Gaussian beams with different spot sizes, and the performance enhancement of the MIM structure is confirmed for different spot sizes. The simulation technique used to generate the results is also verified by comparing them to actual experimental results available in the literature. PMID:24787425

  5. Scaling behavior and surface-plasmon resonances in a model three-dimensional metal-insulator composite

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Stroud, D.

    1993-09-01

    We calculate the ac dielectric function of a model Drude metal-insulator composite, using a three-dimensional (d=3) transfer-matrix algorithm. The real part of the effective conductivity, Rege(ω), reveals (i) a Drude peak that appears only above the percolation threshold pc; and (ii) a broad spectrum of surface-plasmon resonances whose lower edge approaches zero frequency at pc. Sufficiently near pc, the dielectric function is consistent with an expected scaling form previously verified in d=2. The surface-plasmon spectrum resembles effective-medium predictions except for a weak but persistent peak near 0.4ω/ωp.

  6. Transmission characteristics and transmission line model of a metal-insulator-metal waveguide with a stub modified by cuts.

    PubMed

    Shen, Xinru; Wang, Yueke; Yan, Xin; Yuan, Lin; Sang, Tian

    2016-08-10

    We propose a structure of a metal-insulator-metal (MIM) waveguide with a stub modified by cuts. Our simulation results, conducted by the finite element method, show that the wavelengths of transmission dip vary with the position of the cuts and form the zigzag lines. A transmission line model is also presented, and it agrees with simulation results well. It is believed that our findings provide a smart way to design a plasmonic waveguide filter at the communication region based on MIM structures. PMID:27534492

  7. Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Vallée, C.

    2007-04-01

    Metal-insulator-metal capacitors using high-k oxides are known to display nonlinear capacitance-voltage (C-V) characteristics. In the present work it is proposed that such nonlinearities arise from an electrode polarization mechanism. By considering a field activated hopping conduction in the bulk (related to oxygen vacancies), a simple analytical expression is derived which relates the capacitance to the applied bias. The model is able to predict voltage coefficients of capacitance and is found to be in good agreement with experimental C-V.

  8. Fingerprints of the field-induced Berezinskii-Kosterlitz-Thouless transition in quasi-two-dimensional quantum magnets

    NASA Astrophysics Data System (ADS)

    Orendáčová, Alžbeta

    The two-dimensional (2d) easy-plane (XY) model provides a prototypical description of 2d systems exhibiting topological excitations, which drive the Berezinskii-Kosterlitz-Thouless (BKT) transition that occurs in 2d superfluids, electron plasmas, Josephson junction arrays, ultracold atomic 2d Bose gasses, etc. The excitations in the 2d XY model are spin waves and vortices. In the BKT scenario, at low temperatures, all vortices (V) and antivortices (AV) are bound to V-AV pairs, and spin waves dominate in this quasi-long-range-ordered phase with an infinite correlation length, ξ, and an algebraic decay of correlations. At a critical temperature, TBKT, the V-AV pairs start to unbind, driving the transition to a free vortex phase above TBKT, characterized by an exponential divergence of ξ. Vortices remain stable also in quantum 2d anisotropic Heisenberg systems with a very weak XY anisotropy. The BKT scenario appears even in 2d isotropic Heisenberg magnets due to frustration or an external magnetic field. I will focus on quasi-2d spin 1/2 Heisenberg antiferromagnets with extremely weak spin anisotropy. These highly anisotropic layered Cu(II) organo-metallic insulators with relatively low saturation fields, about 6 T, enabled a comprehensive study in a wide range of magnetic fields and temperatures. A response of all compounds to the application of a magnetic field mimics 2d behavior with fingerprints of a field-induced Berezinskii-Kosterlitz-Thouless phase transition. ITMS 26220120005, VEGA 1/0143/13 and APVV-14-0073 are acknowledged for a financial support.

  9. Transport Properties of 2D-Electron Gas in a InGaAs/GaAs DQW in a Vicinity of Low Magnetic-Field-Induced Insulator-Quantum Hall Liquid Transition

    NASA Astrophysics Data System (ADS)

    Arapov, Yu. G.; Yakunin, M. V.; Gudina, S. V.; Harus, G. I.; Neverov, V. N.; Shelushinina, N. G.; Podgornyh, S. M.; Uskova, E. A.; Zvonkov, B. N.

    2007-04-01

    The resistivity ρ of low mobility dilute 2D-elecron gas in a InGaAs/GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8-70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ℏ > 0.1) for our samples. We observed the coexistence of both the quantum Hall (QH) effect for the filling factors v = 2, 4 and the low magnetic field insulator — QH liquid (with v = 10) transition.

  10. Isotope shifts of the 6d{sup 2} D{sub 3/2}-7 p{sup 2} P{sub 1/2} transition in trapped short-lived {sup 209-214}Ra{sup +}

    SciTech Connect

    Giri, G. S.; Versolato, O. O.; Berg, J. E. van den; Boell, O.; Dammalapati, U.; Hoek, D. J. van der; Jungmann, K.; Kruithof, W. L.; Mueller, S.; Nunez Portela, M.; Onderwater, C. J. G.; Santra, B.; Timmermans, R. G. E.; Wansbeek, L. W.; Willmann, L.; Wilschut, H. W.

    2011-08-15

    Laser spectroscopy of short-lived radium isotopes in a linear Paul trap has been performed. The isotope shifts of the 6d{sup 2} D{sub 3/2} -7 p{sup 2} P{sub 1/2} transition in {sup 209-214}Ra{sup +}, which are sensitive to the short-range part of the atomic wave functions, were measured. The results are essential experimental input for improving the precision of atomic structure calculations. This is indispensable for parity violation in Ra{sup +} aiming at the determination of the weak mixing angle.

  11. AC evidence of a field tuned 2D superconductor-metal transition in a low-disorder InOx film

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Pan, Lidong; Wen, Jiajia; Kim, Minsoo; Ganapathy, Sambandamurthy; Armitage, Peter

    2013-03-01

    Employing microwave spectroscopy, we investigated the field tuned quantum phase transition between the superconducting and the resistive states in a low-disorder amorphous InOx film in the frequency range of 0.05 to 16 GHz. Our AC measurements are explicitly sensitive to the critical slowing down of the characteristic frequency scales approaching a transition. The relevant frequency scale of superconducting fluctuations approaches zero at a field Bsm far below the field Bcross where different isotherms of resistance as a function of magnetic field cross each other. The phase stiffness at the lowest frequency vanishes from the superconducting side at B ~Bsm , while the high frequency limit extrapolates to zero near Bcross. Our data are consistent with a scenario where Bsm is the true quantum critical point for a transition from a superconductor to an anomalous metal, while Bcross only signifies a crossover to a regime where superconducting correlations make a vanishing contribution to both AC and DC transport measurements in the low-disorder limit.

  12. Enhanced spin-dependent parity-nonconservation effect in the 7 s 1/2 2S →6 d 5/2 2D transition in Fr: A possibility for unambiguous detection of the nuclear anapole moment

    NASA Astrophysics Data System (ADS)

    Sahoo, B. K.; Aoki, T.; Das, B. P.; Sakemi, Y.

    2016-03-01

    Employing the relativistic coupled-cluster method, comparative studies of the parity nonconserving electric dipole amplitudes for the 7 s 1/2 2S →6 d 5/2 2D transitions in 210Fr and 211Fr isotopes have been carried out. It is found that these transition amplitudes, sensitive only to the nuclear spin-dependent effects, are enhanced substantially owing to the very large contributions from the electron core-polarization effects in Fr. This translates to a relatively large and, in principle, measurable induced light shift, which would be a signature of nuclear spin-dependent parity nonconservation that is dominated by the nuclear anapole moment in a heavy atom like Fr. A plausible scheme to measure this quantity using the Cyclotron and Radioisotope Center (CYRIC) facility at Tohoku University has been outlined.

  13. Anderson transition in ultracold atoms: Signatures and experimental feasibility

    SciTech Connect

    Garcia-Garcia, Antonio M.; Wang Jiao

    2006-12-15

    Kicked rotators with certain nonanalytic potentials avoid dynamical localization and undergo a metal-insulator transition. We show that typical properties of this transition are still present as the nonanalyticity is progressively smoothed out provided that the smoothing is less than a certain limiting value. We have identified a smoothing-dependent time scale such that full dynamical localization is absent and the quantum momentum distribution develops power-law tails with anomalous decay exponents as in the case of a conductor at the metal-insulator transition. We discuss under what conditions these findings may be verified experimentally by using ultracold atom techniques. It is found that ultracold atoms can indeed be utilized for the experimental investigation of the metal-insulator transition.

  14. THE SPITZER c2d SURVEY OF WEAK-LINE T TAURI STARS. III. THE TRANSITION FROM PRIMORDIAL DISKS TO DEBRIS DISKS

    SciTech Connect

    Wahhaj, Zahed; Cieza, Lucas; Koerner, David W.; Case, April; Stapelfeldt, Karl R.; Chapman, Nicholas; Padgett, Deborah L.; Brooke, Tim; Keller, James R.; MerIn, Bruno; Evans, Neal J.; Harvey, Paul; Sargent, Anneila; Van Dishoeck, Ewine F.; Allen, Lori; Blake, Geoff; Mundy, Lee; Myers, Philip C.

    2010-12-01

    We present 3.6 to 70 {mu}m Spitzer photometry of 154 weak-line T Tauri stars (WTTSs) in the Chamaeleon, Lupus, Ophiuchus, and Taurus star formation regions, all of which are within 200 pc of the Sun. For a comparative study, we also include 33 classical T Tauri stars which are located in the same star-forming regions. Spitzer sensitivities allow us to robustly detect the photosphere in the IRAC bands (3.6 to 8 {mu}m) and the 24 {mu}m MIPS band. In the 70 {mu}m MIPS band, we are able to detect dust emission brighter than roughly 40 times the photosphere. These observations represent the most sensitive WTTSs survey in the mid- to far-infrared to date and reveal the frequency of outer disks (r = 3-50 AU) around WTTSs. The 70 {mu}m photometry for half the c2d WTTSs sample (the on-cloud objects), which were not included in the earlier papers in this series, those of Padgett et al. and Cieza et al., are presented here for the first time. We find a disk frequency of 19% for on-cloud WTTSs, but just 5% for off-cloud WTTSs, similar to the value reported in the earlier works. WTTSs exhibit spectral energy distributions that are quite diverse, spanning the range from optically thick to optically thin disks. Most disks become more tenuous than L{sub disk}/L{sub *} = 2 x 10{sup -3} in 2 Myr and more tenuous than L{sub disk}/L{sub *} = 5 x 10{sup -4} in 4 Myr.

  15. The N(^2D - ^4S) 520 nm forbidden doublet transition in the nightglow: An experimental test of the theoretical intensity ratio

    NASA Astrophysics Data System (ADS)

    Slanger, T. G.; Cosby, P. C.; Huestis, D. L.

    2003-04-01

    N(^2D) is an important species in the nighttime ionosphere, as its reaction with O_2 is a principal source of NO. Its modeled concentration peaks near 200 km, at approximately 4 × 10^5 cm-3. Nightglow emission in the optically forbidden lines at 519.8 and 520.0 nm is quite weak, a consequence of the combination of an extremely long radiative lifetime, about 10^5 sec, and quenching by O-atoms, O_2, and N_2. The radiative lifetime is known only from theory, and various calculations lead to a range of possible values for the intensity ratio R = I(519.8)/I(520.0) of 1.5-2.5. On the observational side, Hernandez and Turtle [1969] determined a range of R = 1.3-1.9 in the nightglow, and Sivjee et al. [1981] reported a variable ratio in aurorae, between 1.2 and 1.6. From sky spectra obtained at the Keck II telescope on Mauna Kea, we have accumulated eighty-five 30-60 minute data sets, from March and October, 2000, and April, 2001, over 13 nights of astronomical observations. We find R to have a quite precise value of 1.760± 0.012 (2-σ). There is no difference between the three data sets in terms of the extracted ratio, which therefore seems to be independent of external conditions. At the same time, determination of the O(^1D - ^3P) doublet intensity ratio, I(630.0)/I(636.4), gives a value of 3.03 ± 0.01, the statistical expectation. G. Hernandez and J. P. Turtle, Planet. Space Sci. 17, 675, 1969. G. G. Sivjee, C. S. Deehr, and K. Henricksen, J. Geophys. Res. 86, 1581, 1981.

  16. Measurements of photoionization cross section of the 4p levels and oscillator strength of the 4p→nd 2D3/2,5/2 transitions of potassium

    NASA Astrophysics Data System (ADS)

    Kalyar, M. A.; Yar, A.; Iqbal, J.; Ali, R.; Baig, M. A.

    2016-03-01

    We have carried out measurements of absolute photoionization cross sections of the 4p excited levels and oscillator strengths of the 4p→nd Rydberg transitions in potassium using a two-step photo-excitation and ionization technique in conjunction with a thermionic diode ion detector. The measurements were conducted using the linearly polarized laser light and the absolute values of the cross sections from the 4p 2P3/2 and 2P1/2 excited levels have been determined at the ionization threshold as (6.3±0.9) Mb and (5.4±0.8) Mb respectively. In addition, photoionization cross sections have been determined at various ionizing wavelengths above the first ionization threshold to explore different energy regions of the continuum. The oscillator strengths for the 4p 2P1/2→nd 2D3/2 and 4p 2P3/2→nd 2D3/2,5/2 Rydberg transitions have been deduced by using the measured cross sections of the 4p 2P1/2 and 2P3/2 levels at the ionization threshold. The new results are in good agreement with the available theoretical and experimental data.

  17. Effect of Initial Conditions on 2D Rayleigh-Taylor Instability and Transition to Turbulence in Planar Blast-wave-driven Systems

    SciTech Connect

    Miles, A R; Edwards, M J; Greenough, J A

    2004-03-26

    Perturbations on an interface driven by a strong blast wave grow in time due to a combination of Rayleigh-Taylor, Richtmyer-Meshkov, and decompression effects. In this paper, we present the first results from a computational study of such a system under drive conditions to be attainable on the National Ignition Facility. Using the multiphysics, AMR, higher order Godunov Eulerian hydrocode, Raptor, we consider the late nonlinear instability evolution for multiple amplitude and phase realizations of a variety of multimode spectral types. We show that compressibility effects preclude the emergence of a regime of self-similar instability growth independent of the initial conditions by allowing for memory of the initial conditions to be retained in the mix width at all times. The loss of transverse spectral information is demonstrated, however, along with the existence of a quasi-self-similar regime over short time intervals. Certain aspects of the initial conditions, including the rms amplitude, are shown to have a strong effect on the time to transition to the quasi-self-similar regime.

  18. Aniso2D

    2005-07-01

    Aniso2d is a two-dimensional seismic forward modeling code. The earth is parameterized by an X-Z plane in which the seismic properties Can have monoclinic with x-z plane symmetry. The program uses a user define time-domain wavelet to produce synthetic seismograms anrwhere within the two-dimensional media.

  19. Temperature-driven disorder-order transitions in 2D copper-intercalated MoO3 revealed using dynamic transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Reed, Bryan W.; Chung, Frank R.; Wang, Mengjing; LaGrange, Thomas; Koski, Kristie J.

    2014-12-01

    We demonstrate two different classes of disorder-order phase transitions in two-dimensional layered nanomaterial MoO3 intercalated with ˜9-15 atomic percent zero-valent copper using conventional in situ electron diffraction and dynamic transmission electron microscopy. Heating to ˜325 °C on a time scale of minutes produces a superlattice consistent with the formation of a charge density wave stabilized by nanometer-scale ordering of the copper intercalant. Unlike conventional purely electronic charge-density-wave states which form, reform, and disappear on picosecond scales as the temperature is changed, once it forms the observed structure in Cu-MoO3 is stable indefinitely over a very large temperature range (30 °C to the decomposition temperature of 450 °C). Nanosecond-scale heating to ˜380-400 °C produced a completely different structure, replacing the disordered as-fabricated Cu-MoO3 with a much more crystallographically ordered metastable state that, according to a precession electron diffraction reconstruction, resembles the original MoO3 lattice apart from an asymmetric distortion that appears to expand parts of the van der Waals gaps to accommodate the copper intercalant. Control experiments in Cu-free material exhibited neither transformation, thus it appears the copper is a necessary part of the phase dynamics. This work shows how the combination of high-density metal atom intercalation and heat treatment over a wide range of time scales can produce nanomaterials of high crystalline quality in unique structural states that cannot be accessed through other methods.

  20. Mesh2d

    SciTech Connect

    Greg Flach, Frank Smith

    2011-12-31

    Mesh2d is a Fortran90 program designed to generate two-dimensional structured grids of the form [x(i),y(i,j)] where [x,y] are grid coordinates identified by indices (i,j). The x(i) coordinates alone can be used to specify a one-dimensional grid. Because the x-coordinates vary only with the i index, a two-dimensional grid is composed in part of straight vertical lines. However, the nominally horizontal y(i,j0) coordinates along index i are permitted to undulate or otherwise vary. Mesh2d also assigns an integer material type to each grid cell, mtyp(i,j), in a user-specified manner. The complete grid is specified through three separate input files defining the x(i), y(i,j), and mtyp(i,j) variations.

  1. Mesh2d

    2011-12-31

    Mesh2d is a Fortran90 program designed to generate two-dimensional structured grids of the form [x(i),y(i,j)] where [x,y] are grid coordinates identified by indices (i,j). The x(i) coordinates alone can be used to specify a one-dimensional grid. Because the x-coordinates vary only with the i index, a two-dimensional grid is composed in part of straight vertical lines. However, the nominally horizontal y(i,j0) coordinates along index i are permitted to undulate or otherwise vary. Mesh2d also assignsmore » an integer material type to each grid cell, mtyp(i,j), in a user-specified manner. The complete grid is specified through three separate input files defining the x(i), y(i,j), and mtyp(i,j) variations.« less

  2. Vertical 2D Heterostructures

    NASA Astrophysics Data System (ADS)

    Lotsch, Bettina V.

    2015-07-01

    Graphene's legacy has become an integral part of today's condensed matter science and has equipped a whole generation of scientists with an armory of concepts and techniques that open up new perspectives for the postgraphene area. In particular, the judicious combination of 2D building blocks into vertical heterostructures has recently been identified as a promising route to rationally engineer complex multilayer systems and artificial solids with intriguing properties. The present review highlights recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties. This overview is intended to bridge the gap between two major—yet largely disjunct—developments in 2D heterostructures, which are firmly rooted in solid-state chemistry or physics. Although the underlying types of heterostructures differ with respect to their dimensions, layer alignment, and interfacial quality, there is common ground, and future synergies between the various assembly strategies are to be expected.

  3. Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal-insulator-metal and similar devices.

    PubMed

    Diesing, Detlef; Hasselbrink, Eckart

    2016-07-01

    Metal heterostructures have been used in recent years to gain insights into the relevance of energy dissipation into electronic degrees of freedom in surface chemistry. Non-adiabaticity in the surface chemistry results in the creation of electron-hole pairs, the number and energetic distribution of which need to be studied in detail. Several types of devices, such as metal-insulator-metal, metal-semiconductor and metal-semiconductor oxide-semiconductor, have been used. These devices operate by spatially separating the electrons from the holes, as an internal barrier allows only - or at least favours - transport from the top to the back electrode for one kind of carrier. An introduction into the matter, a survey of the literature and a critical discussion of the state of research is attempted. PMID:27186600

  4. Fano Resonance Based on Metal-Insulator-Metal Waveguide-Coupled Double Rectangular Cavities for Plasmonic Nanosensors.

    PubMed

    Zhang, Zhidong; Luo, Liang; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2016-01-01

    A refractive index sensor based on metal-insulator-metal (MIM) waveguides coupled double rectangular cavities is proposed and investigated numerically using the finite element method (FEM). The transmission properties and refractive index sensitivity of various configurations of the sensor are systematically investigated. An asymmetric Fano resonance lineshape is observed in the transmission spectra of the sensor, which is induced by the interference between a broad resonance mode in one rectangular and a narrow one in the other. The effect of various structural parameters on the Fano resonance and the refractive index sensitivity of the system based on Fano resonance is investigated. The proposed plasmonic refractive index sensor shows a maximum sensitivity of 596 nm/RIU. PMID:27164101

  5. Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Vallée, C.; Gonon, P.; Jorel, C.; El Kamel, F.

    2010-06-01

    This work highlights the influence of the oxygen affinity of the metal electrodes used in high-k metal-insulator-metal capacitors. Several metallic electrodes are tested in order to investigate the role of the metal work function, and the role of the electrode oxygen-affinity in nonlinear behavior of HfO2 and BaTiO3 capacitors. It is shown that the magnitude of the quadratic coefficient of nonlinearity is better explained by the electrode oxygen-affinity rather than by its work function. It is thought that electrode oxidation increases the number of oxygen vacancies at the electrode/dielectric interface, and so increases the magnitude of nonlinearity.

  6. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  7. Fano Resonance Based on Metal-Insulator-Metal Waveguide-Coupled Double Rectangular Cavities for Plasmonic Nanosensors

    PubMed Central

    Zhang, Zhidong; Luo, Liang; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2016-01-01

    A refractive index sensor based on metal-insulator-metal (MIM) waveguides coupled double rectangular cavities is proposed and investigated numerically using the finite element method (FEM). The transmission properties and refractive index sensitivity of various configurations of the sensor are systematically investigated. An asymmetric Fano resonance lineshape is observed in the transmission spectra of the sensor, which is induced by the interference between a broad resonance mode in one rectangular and a narrow one in the other. The effect of various structural parameters on the Fano resonance and the refractive index sensitivity of the system based on Fano resonance is investigated. The proposed plasmonic refractive index sensor shows a maximum sensitivity of 596 nm/RIU. PMID:27164101

  8. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    NASA Astrophysics Data System (ADS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  9. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  10. Electrical parameters of niobium-based overdamped superconductor-normal metal-insulator-superconductor Josephson junctions for digital applications

    NASA Astrophysics Data System (ADS)

    Febvre, Pascal; Bouis, David; De Leo, Natascia; Fretto, Matteo; Sosso, Andrea; Lacquaniti, Vincenzo

    2010-05-01

    We have demonstrated superconductor-normal metal-insulator-superconductor Nb/Al-AlOX/Nb Josephson junctions developed with Al layer thicknesses between 30 and 100 nm, resulting in nonhysteretic current-voltage characteristics for critical current densities between 20 and 60 kA/cm2. Specific capacitances ranged from 180 to 480 fF/μm2, depending on temperature and of barrier deposition conditions. It is shown that the high capacitance seen by the junction depends on the Josephson junction barrier but only to a least extent on the parasitic environment. Although the specific capacitance is unusually high, Stewart-McCumber parameters from 1 to 3, at 4.2 K, optimum for digital single-flux-quantum applications were obtained without external shunting.

  11. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    SciTech Connect

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M.

    2014-11-03

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  12. An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

    NASA Astrophysics Data System (ADS)

    Cortese, Simone; Khiat, Ali; Carta, Daniela; Light, Mark E.; Prodromakis, Themistoklis

    2016-01-01

    Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2-x), in a metal insulator metal crossbar structure. The high voltage margin of 3 V, amongst the highest reported for monolayer selector devices, and the good current density of 104 A/cm2 make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device's characteristics.

  13. Spin transport in normal metal/insulator/topological insulator coupled to ferromagnetic insulator structures

    SciTech Connect

    Kondo, Kenji

    2014-05-07

    In this study, we investigate the spin transport in normal metal (NM)/insulator (I)/topological insulator (TI) coupled to ferromagnetic insulator (FI) structures. In particular, we focus on the barrier thickness dependence of the spin transport inside the bulk gap of the TI with FI. The TI with FI is described by two-dimensional (2D) Dirac Hamiltonian. The energy profile of the insulator is assumed to be a square with barrier height V and thickness d along the transport-direction. This structure behaves as a tunnel device for 2D Dirac electrons. The calculation is performed for the spin conductance with changing the barrier thickness and the components of magnetization of FI layer. It is found that the spin conductance decreases with increasing the barrier thickness. Also, the spin conductance is strongly dependent on the polar angle θ, which is defined as the angle between the axis normal to the FI and the magnetization of FI layer. These results indicate that the structures are promising candidates for novel tunneling magnetoresistance devices.

  14. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    SciTech Connect

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.

  15. Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

    NASA Astrophysics Data System (ADS)

    Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

    2016-03-01

    A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

  16. Metal-insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

    NASA Astrophysics Data System (ADS)

    Silwal, Punam; Miao, Ludi; Stern, Ilan; Zhou, Xiaolan; Hu, Jin; Spinu, Leonard; Kim, Dae Ho; Talbayev, Diyar

    2014-03-01

    Spinel NiCo2O4 is attractive for various technological applications but is less studied partly because of the unavailability of NiCo2O4 single crystal or epitaxial thin film. We have grown high-quality crystalline epitaxial NiCo2O4 thin films on MgAl2O4 (001) substrates. The systematic investigation of the films grown at various temperatures reveals a strong correlation between the structural, magnetic, and electrical transport properties. The low-temperature grown films show metallic behavior with strong ferrimagnetic ordering while the high temperature grown films are insulating with suppressed magnetic order. In addition, these films show excellent transport and magnetic properties down to 2 unit-cell thickness. Our study of temperature- and growth-condition dependent optical conductivity provides further insight in the carrier transport of these films. We observed coherent band-like transport in both low- and high temperature grown films, whereas only thermally activated hopping conductivity was reported in previous studies. The confirmation of coherent band like transport provides a basis for further improving NiCo2O4 for the application as transparent conducting oxide.

  17. Metal-Insulator Transition and Superconductivity in the Two-Orbital Hubbard-Holstein Model for Iron-Based Superconductors

    NASA Astrophysics Data System (ADS)

    Yamada, Takemi; Ishizuka, Jun; Ōno, Yoshiaki

    2014-04-01

    We investigate a two-orbital model for iron-based superconductors to elucidate the effect of interplay between electron correlation and Jahn-Teller electron-phonon coupling by using the dynamical mean-field theory combined with the exact diagonalization method. When the intra- and inter-orbital Coulomb interactions, U and U', increase with U = U', both the local spin and orbital susceptibilities, χs and χo, increase with χs = χo in the absence of the Hund’s rule coupling J and the electron-phonon coupling g. In the presence of J and g, there are distinct two regimes: for J ≳ 2g2/ω 0 with the phonon frequency ω0, χs is enhanced relative to χo and shows a divergence at J = Jc above which the system becomes Mott insulator, while for J ≲ 2g2/ω 0, χo is enhanced relative to χs and shows a divergence at g = gc above which the system becomes bipolaronic insulator. In the former regime, the superconductivity is mediated by antiferromagnetic fluctuations enhanced due to Fermi-surface nesting and is found to be largely dependent on carrier doping. On the other hand, in the latter regime, the superconductivity is mediated by ferro-orbital fluctuations and is observed for wide doping region including heavily doped case without the Fermi-surface nesting.

  18. Real-space observation of metal-insulator transition at complex oxide heterointerface with cross-sectional STM

    NASA Astrophysics Data System (ADS)

    Chiu, Ya-Ping; Lin, Jheng-Cyuan; Thanh, Tra-Vu; Lin, Tai-Te; Huang, Po-Cheng; Huang, Bo-Chao; Lin, Jiunn-Yuan; Chu, Ying-Hao

    We report the direct observation of tunable electronic property through visible light at LaAlO3 / SrTiO3 (LAO/STO) complex oxide heterointerface using cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S). Many researches have shown that for the interface to be conducting, the thickness of LAO should be equal to or greater than the critical value 4 unit cells (u.c.). With LAO surface modification by Au clusters, interfacial two-dimensional electron gas presents a giant optical switching effect under visible light illuminated. In this study, through the interaction between photons and electrons system, a direct observation of the evolution of electronic structures from insulating to conducting has been revealed in the LAO (3u.c.)/STO model using the technique of cross-sectional scanning tunneling microscopy and spectroscopy. Results clearly reveal the changes in the built-in electric field in LAO and the band bending in the STO adjacent to the interface after light illumination. National Sun Yat-sen University, Taiwan; Academia Sinica, Taiwan.

  19. 2D materials for nanophotonic devices

    NASA Astrophysics Data System (ADS)

    Xu, Renjing; Yang, Jiong; Zhang, Shuang; Pei, Jiajie; Lu, Yuerui

    2015-12-01

    Two-dimensional (2D) materials have become very important building blocks for electronic, photonic, and phononic devices. The 2D material family has four key members, including the metallic graphene, transition metal dichalcogenide (TMD) layered semiconductors, semiconducting black phosphorous, and the insulating h-BN. Owing to the strong quantum confinements and defect-free surfaces, these atomically thin layers have offered us perfect platforms to investigate the interactions among photons, electrons and phonons. The unique interactions in these 2D materials are very important for both scientific research and application engineering. In this talk, I would like to briefly summarize and highlight the key findings, opportunities and challenges in this field. Next, I will introduce/highlight our recent achievements. We demonstrated atomically thin micro-lens and gratings using 2D MoS2, which is the thinnest optical component around the world. These devices are based on our discovery that the elastic light-matter interactions in highindex 2D materials is very strong. Also, I would like to introduce a new two-dimensional material phosphorene. Phosphorene has strongly anisotropic optical response, which creates 1D excitons in a 2D system. The strong confinement in phosphorene also enables the ultra-high trion (charged exciton) binding energies, which have been successfully measured in our experiments. Finally, I will briefly talk about the potential applications of 2D materials in energy harvesting.

  20. Inertial solvation in femtosecond 2D spectra

    NASA Astrophysics Data System (ADS)

    Hybl, John; Albrecht Ferro, Allison; Farrow, Darcie; Jonas, David

    2001-03-01

    We have used 2D Fourier transform spectroscopy to investigate polar solvation. 2D spectroscopy can reveal molecular lineshapes beneath ensemble averaged spectra and freeze molecular motions to give an undistorted picture of the microscopic dynamics of polar solvation. The transition from "inhomogeneous" to "homogeneous" 2D spectra is governed by both vibrational relaxation and solvent motion. Therefore, the time dependence of the 2D spectrum directly reflects the total response of the solvent-solute system. IR144, a cyanine dye with a dipole moment change upon electronic excitation, was used to probe inertial solvation in methanol and propylene carbonate. Since the static Stokes' shift of IR144 in each of these solvents is similar, differences in the 2D spectra result from solvation dynamics. Initial results indicate that the larger propylene carbonate responds more slowly than methanol, but appear to be inconsistent with rotational estimates of the inertial response. To disentangle intra-molecular vibrations from solvent motion, the 2D spectra of IR144 will be compared to the time-dependent 2D spectra of the structurally related nonpolar cyanine dye HDITCP.