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Sample records for 2d metal-insulator transition

  1. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

    SciTech Connect

    Sarachik, Myriam P.

    2015-02-20

    STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectric power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.

  2. Interplay between Ferroelastic and Metal-Insulator Phase Transitions in Strained Quasi-2D VO[subscript 2] Nanoplatelets

    SciTech Connect

    Tselev, Alexander; Strelcov, Evgheni; Luk’yanchuk, Igor A.; Budai, John D.; Tischler, Jonathan Z.; Ivanov, Ilia N.; Jones, Keith; Proksch, Roger; Kalinin, Sergei V.; Kolmakov, Aandrei

    2010-07-06

    Formation of ferroelastic twin domains in vanadium dioxide (VO{sub 2}) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO{sub 2} quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO{sub 2} structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.

  3. Interplay between Ferroelastic and Metal-Insulator Phase Transitions in Strained Quasi-2D VO[subscript 2] Nanoplatelets

    SciTech Connect

    Tselev, Alexander; Strelcov, Evgheni; Luk’yanchuk, Igor A.; Budai, John D.; Tischler, Jonathan Z.; Ivanov, Ilia N.; Jones, Keith; Proksch, Roger; Kalinin, Sergei V.; Kolmakov, Andrei

    2011-08-09

    Formation of ferroelastic twin domains in vanadium dioxide (VO{sub 2}) nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline VO{sub 2} quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the 2D geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate the possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and nontrivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that a complete picture of the phase transitions in single-crystalline and disordered VO{sub 2} structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.

  4. Multifractality and Conformal Invariance at 2D Metal-Insulator Transition in the Spin-Orbit Symmetry Class

    NASA Astrophysics Data System (ADS)

    Obuse, Hideaki; Subramaniam, Arvind; Furusaki, Akira; Gruzberg, Ilya; Ludwig, Andreas

    2007-03-01

    We study the multifractality of critical wave functions at boundaries and corners at the Anderson metal-insulator transition for noninteracting electrons in the two-dimensional (2D) spin-orbit (symplectic) universality class. We find that the multifractal exponents near a boundary are different from those in the bulk. The exponents at a corner are found to be directly related to those at a straight boundary through a relation arising from conformal invariance. This provides direct numerical evidence for conformal invariance at the 2D spin-orbit metal-insulator transition. We also show that the presence of boundaries modifies the multifractality of the whole sample even in the thermodynamic limit.

  5. Multifractality and Conformal Invariance at 2D Metal-Insulator Transition in the Spin-Orbit Symmetry Class

    NASA Astrophysics Data System (ADS)

    Obuse, H.; Subramaniam, A. R.; Furusaki, A.; Gruzberg, I. A.; Ludwig, A. W. W.

    2007-04-01

    We study the multifractality (MF) of critical wave functions at boundaries and corners at the metal-insulator transition (MIT) for noninteracting electrons in the two-dimensional (2D) spin-orbit (symplectic) universality class. We find that the MF exponents near a boundary are different from those in the bulk. The exponents at a corner are found to be directly related to those at a straight boundary through a relation arising from conformal invariance. This provides direct numerical evidence for conformal invariance at the 2D spin-orbit MIT. The presence of boundaries modifies the MF of the whole sample even in the thermodynamic limit.

  6. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  7. Approximating metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Danieli, Carlo; Rayanov, Kristian; Pavlov, Boris; Martin, Gaven; Flach, Sergej

    2015-12-01

    We consider quantum wave propagation in one-dimensional quasiperiodic lattices. We propose an iterative construction of quasiperiodic potentials from sequences of potentials with increasing spatial period. At each finite iteration step, the eigenstates reflect the properties of the limiting quasiperiodic potential properties up to a controlled maximum system size. We then observe approximate Metal-Insulator Transitions (MIT) at the finite iteration steps. We also report evidence on mobility edges, which are at variance to the celebrated Aubry-André model. The dynamics near the MIT shows a critical slowing down of the ballistic group velocity in the metallic phase, similar to the divergence of the localization length in the insulating phase.

  8. Ferroelectric control of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    He, Xu; Jin, Kui-juan; Ge, Chen; Ma, Zhong-shui; Yang, Guo-zhen

    2016-03-01

    We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO3)N/LaNiO3/LaTiO3, in which the BiFeO3 layers are ferroelectric, the LaNiO3 layer is the layer of which the electronic structure is to be tuned, and LaTiO3 layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO3 layer because of the changes of crystal field splitting of the Ni eg orbitals and the bandwidth of the Ni in-plane eg orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

  9. Metal Insulator transition in Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Jovaini, Azita; Fujita, Shigeji; Suzuki, Akira; Godoy, Salvador

    2012-02-01

    MAR12-2011-000262 Abstract Submitted for the MAR12 Meeting of The American Physical Society Sorting Category: 03.9 (T) On the metal-insulator-transition in vanadium dioxide AZITA JOVAINI, SHIGEJI FUJITA, University at Buffalo, SALVADOR GODOY, UNAM, AKIRA SUZUKI, Tokyo University of Science --- Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity _/ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop. Prefer Oral Session X Prefer .

  10. Switchable Metal-Insulator Phase Transition Metamaterials.

    PubMed

    Hajisalem, Ghazal; Nezami, Mohammadreza S; Gordon, Reuven

    2017-04-06

    We investigate the switching of a gap plasmon tunnel junction between conducting and insulating states. Hysteresis is observed in the second and the third harmonic generation power dependence, which arises by thermally induced disorder ("melting") of a two-carbon self-assembled monolayer between an ultraflat gold surface and metal nanoparticles. The hysteresis is observed for a variety of nanoparticle sizes, but not for larger tunnel junctions where there is no appreciable tunneling. By combining quantum corrected finite-difference time-domain simulations with nonlinear scattering theory, we calculate the changes in the harmonic generation between the tunneling and the insulating states, and good agreement is found with the experiments. This paves the way to a new class of metal-insulator phase transition switchable metamaterials, which may provide next-generation information processing technologies.

  11. Thermodynamic behavior near a metal-insulator transition

    NASA Technical Reports Server (NTRS)

    Paalanen, M. A.; Graebner, J. E.; Bhatt, R. N.; Sachdev, S.

    1988-01-01

    Measurements of the low-temperature specific heat of phosphorus-doped silicon for densities near the metal-insulator transition show an enhancement over the conduction-band itinerant-electron value. The enhancement increases toward lower temperatures but is less than that found for the spin susceptibility. The data are compared with various theoretical models; the large ratio of the spin susceptibility to specific heat indicates the presence of localized spin excitations in the metallic phase as the metal-insulator transition is approached.

  12. Terahertz spectroscopy of the metal insulator transition in vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Hilton, David; Prasankumar, Rohit; Cavalleri, Andrea; Fourmaux, Sylvain; Kieffer, Jean-Claude; Taylor, Antoinette; Averitt, Richard

    2006-03-01

    We employ terahertz spectroscopy to study the metal-insulator phase transition in vanadium dioxide (VO2 ). We measure the terahertz frequency conductivity in the metallic phase that has a real conductivity of 1000 &-1circ; cm-1 and a negligible imaginary conductivity. The observed conductivity dynamics are consistent with a photoinduced transition in spatially inhomogeneous regions of the film, followed by a thermally driven transition to the maximum conductivity.

  13. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  14. Metal-Insulator Transition and Topological Properties of Pyrochlore Iridates

    NASA Astrophysics Data System (ADS)

    Zhang, Hongbin; Haule, Kristjan; Vanderbilt, David

    2017-01-01

    Combining density functional theory (DFT) and embedded dynamical mean-field theory (DMFT) methods, we study the metal-insulator transition in R2Ir2 O7 (R =Y , Eu, Sm, Nd, Pr, and Bi) and the topological nature of the insulating compounds. Accurate free energies evaluated using the charge self-consistent DFT +DMFT method reveal that the metal-insulator transition occurs for an A -cation radius between that of Nd and Pr, in agreement with experiments. The all-in-all-out magnetic phase, which is stable in the Nd compound but not the Pr one, gives rise to a small Ir4 + magnetic moment of ≈0.4 μB and opens a sizable correlated gap. We demonstrate that within this state-of-the-art theoretical method, the insulating bulk pyrochlore iridates are topologically trivial.

  15. Disorder-Driven Metal-Insulator Transitions in Deformable Lattices

    NASA Astrophysics Data System (ADS)

    Di Sante, Domenico; Fratini, Simone; Dobrosavljević, Vladimir; Ciuchi, Sergio

    2017-01-01

    We show that, in the presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition is fundamentally changed with respect to the noninteracting (Anderson) scenario. For strong disorder, even a modest electron-phonon interaction is found to dramatically renormalize the random potential, opening a mobility gap at the Fermi energy. This process, which reflects disorder-enhanced polaron formation, is here given a microscopic basis by treating the lattice deformations and Anderson localization effects on the same footing. We identify an intermediate "bad insulator" transport regime which displays resistivity values exceeding the Mott-Ioffe-Regel limit and with a negative temperature coefficient, as often observed in strongly disordered metals. Our calculations reveal that this behavior originates from significant temperature-induced rearrangements of electronic states due to enhanced interaction effects close to the disorder-driven metal-insulator transition.

  16. Metal-insulator transition near a superconducting state

    NASA Astrophysics Data System (ADS)

    Kaveh, M.; Mott, N. F.

    1992-03-01

    We show that when the metal-insulation transition occurs near a superconducting state it results in a different critical behavior from that of amorphous metals or uncompensated doped semiconductors. This difference results from the enhancement of the effective electron-electron interaction caused by fluctuations to the superconducting state. This explains the recent experiments of Micklitz and co-workers on amorphous superconducting mixtures Ga-Ar and Bi-Kr.

  17. The metal-insulator transition in magnetite.

    NASA Technical Reports Server (NTRS)

    Cullen, J. R.; Callen, E.

    1972-01-01

    We describe an electronic model for the low temperature transition in magnetite, in which the average number of electrons on a site is non-integral. The solution of the one-dimensional problem is reviewed, and the connection of the model with the Verwey ordering is discussed. Some of the implication of the three dimensional problem are discussed.

  18. Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.

    PubMed

    Shekhawat, Ashivni; Papanikolaou, Stefanos; Zapperi, Stefano; Sethna, James P

    2011-12-30

    Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.

  19. Role of phonons in the metal-insulator phase transition.

    NASA Technical Reports Server (NTRS)

    Langer, W. D.

    1972-01-01

    Review, for the transition series oxides, of the Mattis and Lander model, which is one of electrons interacting with lattice vibrations (electron and phonon interaction). The model displays superconducting, insulating, and metallic phases. Its basic properties evolve from a finite crystallographic distortion associated with a dominant phonon mode and the splitting of the Brillouin zone into two subzones, a property of simple cubic and body centered cubic lattices. The order of the metal-insulator phase transition is examined. The basic model has a second-order phase transition and the effects of additional mechanisms on the model are calculated. The way in which these mechanisms affect the magnetically ordered transition series oxides as described by the Hubbard model is discussed.

  20. Holographic metal-insulator transition in higher derivative gravity

    NASA Astrophysics Data System (ADS)

    Ling, Yi; Liu, Peng; Wu, Jian-Pin; Zhou, Zhenhua

    2017-03-01

    We introduce a Weyl term into the Einstein-Maxwell-Axion theory in four dimensional spacetime. Up to the first order of the Weyl coupling parameter γ, we construct charged black brane solutions without translational invariance in a perturbative manner. Among all the holographic frameworks involving higher derivative gravity, we are the first to obtain metal-insulator transitions (MIT) when varying the system parameters at zero temperature. Furthermore, we study the holographic entanglement entropy (HEE) of strip geometry in this model and find that the second order derivative of HEE with respect to the axion parameter exhibits maximization behavior near quantum critical points (QCPs) of MIT. It testifies the conjecture in [1,2] that HEE itself or its derivatives can be used to diagnose quantum phase transition (QPT).

  1. On holographic disorder-driven metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Baggioli, Matteo; Pujolàs, Oriol

    2017-01-01

    We give a minimal holographic model of a disorder-driven metal-insulator transition. It consists in a CFT with a charge sector and a translation-breaking sector that interact in the most generic way allowed by the symmetries and by dynamical consistency. In the gravity dual, it reduces to a Massive Gravity-Maxwell model with a new direct coupling between the gauge field and the metric that is allowed when gravity is massive. We show that the effect of this coupling is to decrease the DC electrical conductivity generically. This gives a nontrivial check that holographic massive gravity can be consistently interpreted as disorder from the CFT perspective. The suppression of the conductivity happens to such an extent that it does not obey any lower bound and it can be very small in the insulating phase. In some cases, the large disorder limit produces gradient instabilities that hint at the formation of modulated phases.

  2. Capacitive network near the metal insulator transition in Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Ramirez, J. G.; Patino, E. J.; Schmidt, R.; Sharoni, A.; Gomez, M. E.; Schuller, I. K.

    2011-03-01

    Recent infrared spectroscopy and transport measurements in nano-scaled junction of VO2 have revealed the existence of phase separation into metallic and insulating phases. Here we present Impedance spectroscopy measurements performed in high quality Vanadium dioxide (VO2) thin films for the first time. This technique allows distinguishing between the resistive and capacitive response of the VO2 films and provides the dielectric properties across the metal-insulator transition (MIT). The film capacitance exhibits an unusual increase close to the MIT which implies the formation of a capacitor network produced by the nanoscale phase separation of metallic and insulating phases. This work has been supported by AFOSR, COLCIENCIAS, CENM and Ramon y Cajal Fellowship.

  3. Chiral phase transition in lattice QCD as a metal-insulator transition

    SciTech Connect

    Garcia-Garcia, Antonio M.; Osborn, James C.

    2007-02-01

    We investigate the lattice QCD Dirac operator with staggered fermions at temperatures around the chiral phase transition. We present evidence of a metal-insulator transition in the low lying modes of the Dirac operator around the same temperature as the chiral phase transition. This strongly suggests the phenomenon of Anderson localization drives the QCD vacuum to the chirally symmetric phase in a way similar to a metal-insulator transition in a disordered conductor. We also discuss how Anderson localization affects the usual phenomenological treatment of phase transitions a la Ginzburg-Landau.

  4. Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.

    PubMed

    Heo, Jinseong; Jeong, Heejeong; Cho, Yeonchoo; Lee, Jaeho; Lee, Kiyoung; Nam, Seunggeol; Lee, Eun-Kyu; Lee, Sangyeob; Lee, Hyangsook; Hwang, Sungwoo; Park, Seongjun

    2016-11-09

    Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride to semiconducting transition-metal dichalcogenides. Recently, metal-insulator-semiconductor field effect transistors built from these 2D elements were studied for flexible and transparent electronics. However, to induce ambipolar characteristics for alternative power-efficient circuitry, ion-gel gating is often employed for high capacitive coupling, limiting stable operation at ambient conditions. Here, we report reconfigurable MoTe2 optoelectronic transistors with all 2D components, where the device can be reconfigured by both drain and gate voltages. Eight different configurations for each fixed voltage are spatially resolved by scanning photocurrent microscopy. In addition, metal-insulator transitions are observed in both electron and hole carriers under 2 V due to strong Coulomb interaction in the system. Furthermore, the vertical tunneling photocurrent through multiple van der Waals layers between the gate and source contacts is measured. Our reconfigurable devices offer potential building blocks for system-on-a-chip optoelectronics.

  5. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    PubMed Central

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-01-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system. PMID:26860789

  6. Anderson metal-insulator transitions with classical magnetic impurities

    SciTech Connect

    Jung, Daniel; Kettemann, Stefan

    2014-08-20

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude W{sub c}, in the presence of Heisenberg impurities, W{sub c} is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  7. Metal-insulator transition in a switchable mirror

    NASA Astrophysics Data System (ADS)

    Roy, Arunabha Shasanka

    2001-11-01

    Rare earth hydride films can be converted reversibly from metallic mirrors to insulating windows simply by changing the surrounding hydrogen gas pressure at room temperature. At low temperatures, in situ doping is not possible in this way as hydrogen cannot diffuse. However, our finding of persistent photoconductivity under ultraviolet illumination enables us to tune yttrium hydride through the T = 0 metal-insulator transition. Conductivity and Hall measurements are used to determine the critical exponents in this system: mu = 1.0 +/- 0.1 and zv = 6.0 +/- 0.5. The simultaneous validity of finite-size scaling in the metal and its failure in the insulator motivates a study of the insulating phase of YHx in greater detail. A new transport regime is discovered which is consistent with our earlier determined values for the critical exponents but entails a new scaling dependence of the conductivity on the carrier density n and temperature T. The unusually large value for the product of the static and dynamic critical exponents appears to signify the important role played by electron-electron interactions in this system. Finally, possible schemes for the mechanism underlying the unusual photoconductivity are discussed.

  8. Metal-insulator transition in two-dimensional random fermion systems of chiral symmetry classes

    NASA Astrophysics Data System (ADS)

    König, E. J.; Ostrovsky, P. M.; Protopopov, I. V.; Mirlin, A. D.

    2012-05-01

    Field-theoretical approach to Anderson localization in 2D disordered fermionic systems of chiral symmetry classes (BDI, AIII, CII) is developed. Important representatives of these symmetry classes are random hopping models on bipartite lattices at the band center. As was found by Gade and Wegner two decades ago within the sigma-model formalism, quantum interference effects in these classes are absent to all orders of perturbation theory. We demonstrate that the quantum localization effects emerge when the theory is treated nonperturbatively. Specifically, they are controlled by topological vortexlike excitations of the sigma models. We derive renormalization-group equations including these nonperturbative contributions. Analyzing them, we find that the 2D disordered systems of chiral classes undergo a metal-insulator transition driven by topologically induced Anderson localization. We also show that the Wess-Zumino and Z2 θ terms on surfaces of 3D topological insulators (in classes AIII and CII, respectively) overpower the vortex-induced localization.

  9. Metal-insulator transitions and magnetic susceptibility in doped cuprate compounds

    NASA Astrophysics Data System (ADS)

    Dzhumanov, S.; Kurbanov, U. T.; Khudayberdiev, Z. S.; Hafizov, A. R.

    2016-11-01

    Results are presented from a theoretical study of the possibility of hole carrier localization and metal-insulator transitions which show up in the temperature dependences of the magnetic susceptibility χ(T) of doped copper-oxide (cuprate) compounds. The criteria for metal-insulator transitions owing to strong hole-lattice interactions and the formation of very narrow polaron bands in these materials with reduced doping level x are analyzed. It is shown that these kinds of metal-insulator transitions occur in underdoped La2-xSrxCuO4 and YBa2Cu3O6+x cuprates (i.e., for x ranging from 0.04 to 0.12). The characteristic temperature dependences χ(T) of the HTSC cuprates are found for different doping levels. These results are in good agreement with experimental data on metal-insulator transitions and the magnetic susceptibility of the HTSC cuprates.

  10. Metal-insulator and charge ordering transitions in oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, Sujay Kumar

    Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase

  11. Percolation metal-insullator transition in BiSrCaCuO films

    NASA Astrophysics Data System (ADS)

    Okunev, V. D.; Pafomov, N. N.; Svistunov, V. M.; Lewandowski, S. J.; Gierlowski, P.; Kula, W.

    1996-02-01

    An experimental investigation of the metal-insulator trnasition in BiSrCaCuO (BSCCO) films is reported. We performed resistivity, optical-absorption and critical-temperature measurements on several samples obtained by different technological methods. The results agree well with the percolation mechanism of the metal-insulator transition and show interesting correlations between room-temperature conductivity and superconducting properties of the investigated films.

  12. Interplay between Ferroelastic and Metal-Insulator Phase Transitions in Strained Quasi-Two-Dimensional VO2 Nanoplatelets

    SciTech Connect

    Tselev, Alexander; Strelcov, Evgheni; Luk'yanchuk, Prof. Igor A.; Ivanov, Ilia N; Budai, John D; Tischler, Jonathan Zachary; Jones, Keith M; Proksch, Roger; Kalinin, Sergei V; Kolmakov, Andrei

    2010-01-01

    Formation of ferroelastic twin domains in VO_2 nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline vanadium dioxide (VO_2) quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and non-trivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that complete picture of the phase transitions in single-crystalline and disordered VO_2 structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.

  13. Mobility engineering and a metal-insulator transition in monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Radisavljevic, Branimir; Kis, Andras

    2013-09-01

    Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS2 or WSe2 are gaining in importance as promising channel materials for field-effect transistors (FETs). The presence of a direct bandgap in monolayer MoS2 due to quantum-mechanical confinement allows room-temperature FETs with an on/off ratio exceeding 108. The presence of high- κ dielectrics in these devices enhanced their mobility, but the mechanisms are not well understood. Here, we report on electrical transport measurements on MoS2 FETs in different dielectric configurations. The dependence of mobility on temperature shows clear evidence of the strong suppression of charged-impurity scattering in dual-gate devices with a top-gate dielectric. At the same time, phonon scattering shows a weaker than expected temperature dependence. High levels of doping achieved in dual-gate devices also allow the observation of a metal-insulator transition in monolayer MoS2 due to strong electron-electron interactions. Our work opens up the way to further improvements in 2D semiconductor performance and introduces MoS2 as an interesting system for studying correlation effects in mesoscopic systems.

  14. Terahertz transport dynamics in the metal-insulator transition of V2O3 thin film

    NASA Astrophysics Data System (ADS)

    Luo, Y. Y.; Su, F. H.; Zhang, C.; Zhong, L.; Pan, S. S.; Xu, S. C.; Wang, H.; Dai, J. M.; Li, G. H.

    2017-03-01

    The dynamic behavior of thermally-induced metal-insulator transition of V2O3 thin film on Si substrate grown by reactive magnetron sputtering was investigated by the terahertz time-domain spectroscopy. It was found that the THz absorption and optical conductivity of the thin films are temperature-dependent, and the THz amplitude modulation can reach as high as 74.7%. The complex THz optical conductivity in the metallic state of the V2O3 thin films can be well-fitted by the Drude-Smith model, which offer the insight into the electron transport dynamic during the metal-insulator transition of the thin film.

  15. Metal-insulator transition in NaxWO3: Photoemission spectromicroscopy study

    NASA Astrophysics Data System (ADS)

    Paul, Sanhita; Ghosh, Anirudha; Raj, Satyabrata

    2014-04-01

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, NaxWO3 by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of NaxWO3 reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in NaxWO3.

  16. Metal-insulator transition at lanthanum aluminate-strontium titanate interface induced by oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Dai, Weitao; Cen, Cheng

    The formation of two-dimensional electron gas (2DEG) at lanthanum aluminate (LAO)-strontium titanate (STO) interface, as well as the 2DEG's unique characters in metal-insulator transition, have evoked widespread interest. Highly insulating interfaces are obtained for the structures with LAO thickness below 3 unit cell (uc) and abrupt transition from an insulating to conducting interface was observed for samples with thicker LAO layers. For 3uc LAO/STO samples, reversible nanoscale control of the metal-insulator transition was implemented by a conductive AFM writing. Our research furtherly discovered a very stable metal-insulator transition can be achieved by oxygen plasma (OP) treatment for samples with thicker LAO layers. AFM imaging and XPS measurement demonstrated the low energy OP treatment altered only the surface bonds, which confirmed the importance of surface properties in the heterostructures. Then microscale Hall bars were patterned at the interface and imaged by electrostatic force microscope. Their transport and magnetic properties were measured. This research will promote deeper understanding about the interfacial metal-insulator transition mechanism and open new device opportunities. This work is supported by the Department of Energy Grant No. DE-SC-0010399 and National Science Foundation Grant No. NSF-1454950.

  17. Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.

    2014-06-01

    Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (nc) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) nc. We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, kFl=1, where kF(n) is the 2D Fermi wave vector and l (n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density nc as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density nc appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a

  18. Pure electronic metal-insulator transition at the interface of complex oxides

    SciTech Connect

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  19. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  20. Gas sensor based on metal-insulator transition in VO2 nanowire thermistor.

    PubMed

    Strelcov, Evgheni; Lilach, Yigal; Kolmakov, Andrei

    2009-06-01

    Using temperature driven sharp metal-insulator phase transition in single crystal VO(2) nanowires, the realization of a novel gas sensing concept has been tested. Varying the temperature of the nanowire close to the transition edge, the conductance of the nanowire becomes extremely responsive to the tiny changes in molecular composition, pressure, and temperature of the ambient gas environment. This gas sensing analog of the transition edge sensor radiometry used in astrophysics opens new opportunities in gas sensorics.

  1. Electrocaloric effect of metal-insulator transition in VO{sub 2}

    SciTech Connect

    Matsunami, Daichi; Fujita, Asaya

    2015-01-26

    The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

  2. Change of universality class of metal-insulator transition due to magnetic ordering

    NASA Astrophysics Data System (ADS)

    de Oliveira, N. A.; Tovar Costa, M. V.; Troper, A.; Japiassú, Gloria M.; Continentino, M. A.

    1999-04-01

    Using a two-band model we report a theory to describe the metal-insulator (MI) transition as a function of an external applied magnetic field in Kondo insulators. To deal with electronic correlations we use a functional integral approach in the static approximation. We show the existence of a critical value of the Coulomb correlation Uc, such that for Utransition is continuous and occurs from a paramagnetic insulator to a paramagnetic metal. In this case this transition is in the universality class of density-driven transitions. For U>Uc, the transition is to a ferromagnetic metal and it is described by different critical exponents.

  3. Separation observation of metal-insulator transition and structural phase transition in VO2

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Tak; Kim, Bong-Jun; Lee, Yong Wook; Chae, Byung Gyu; Yun, Sun Jin; Oh, Soo-Young; Lim, Yong-Sik

    2007-03-01

    An intermediate monoclinic metal phase between the metal-insulator transition (MIT) and the structural phase transition (SPT) is observed with VO2-based two-terminal devices and can be explained in terms of the Mott MIT. The conductivity of this phase linearly increases with increasing temperature up to TSPT 68^oC and becomes maximum at TSPT. The SPT is confirmed by micro-Raman spectroscopy. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the VO2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor. (References: New J. Phys. 6 (1994) 52 (http://www.njp.org); Appl. Phys. Lett. 86 (2005) 24210); Physica B 369 (2005) 76; cond-mat/0607577; cond-mat/0608085; cond-mat/0609033).

  4. Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

    NASA Astrophysics Data System (ADS)

    Chen, X. J.; Habermeier, H.-U.; Zhang, H.; Gu, G.; Varela, M.; Santamaria, J.; Almasan, C. C.

    2005-09-01

    It has been suggested that the maximum magnitude of colossal magnetoresistance occurs in mixed-valent manganites with a tolerance factor t=0.96 [Zhou, Archibald, and Goodenough, Nature (London) 381, 770 (1996)]. However, at t≈0.96 most manganites have relatively low values of the metal-insulator transition temperature TMI(˜60-150K) . Here, we report that a 50 Å La0.9Sr0.1MnO3 thin film with t=0.96 grown on a (100) SrTiO3 substrate has a metal-insulator transition above room temperature, which represents a doubling of TMI compared with its value in the bulk material. We show that this spectacular increase of TMI is a result of the epitaxially compressive strain-induced reduction of the Jahn-Teller distortion.

  5. Nanostructural model of metal-insulator transition in layered LixZrNCl superconductors

    NASA Astrophysics Data System (ADS)

    Phillips, J. C.

    2008-03-01

    The self-organized dopant percolative filamentary model, entirely orbital in character (no fictive spins), has recently quantitatively and specifically explained chemical trends in ceramic layered cuprate superconductors. Here, this model explains the observation of an abrupt jump ΔTc(x) in LixZrNCl powders over a wide composition range Δx , as well as many other features in the resistivity, lattice constants, Raman spectra, upper critical field, and Meissner volume factor. The ceramic data confirm one-dimensional features in realistic structural models of three-dimensional metal-insulator transitions that had been previously only hypothetical. These data provide a “missing link” between the metal-insulator transition in semiconductor impurity bands and cuprate superconductors. They show that all three material families are united by exhibiting an intermediate phase, absent from crystals, but seen in many properties of network glasses.

  6. GW study of the metal-insulator transition of bcc hydrogen

    SciTech Connect

    Li, Je-luen; Rignanese, G.-M.; Chang, Eric K.; Blase, Xavier; Louie, Steven G.

    2002-01-31

    We study the metal-insulator transition in a model Mott system, a bcc hydrogen solid, by performing ab initio quasiparticle band-structure calculations within the GW approximation for a wide range of lattice constants. The value of the critical electron density n-sub c is consistent with Mott's original criterion. For smaller lattice constants, our spin-polarized GW results agree well with previous variational quantum Monte Carlo calculations. For large lattice constants, the computed quasiparticle band gap corresponds to the difference between the ionization energy and electron affinity of an isolated hydrogen atom. Near the metal-insulator transition, we investigate the quality of the quasiparticle wave functions obtained from different starting approximations in density-functional theory. Finally, we gain new insight into the GW method and its applicability to spin-polarized systems, for which several refinements are introduced.

  7. Verwey Metal-Insulator Transition in Magnetite from the Slave-Boson Approach

    NASA Astrophysics Data System (ADS)

    Sherafati, Mohammad; Satpathy, Sashi; Pettey, Dix

    2013-03-01

    We study the Verwey metal-insulator transition in magnetite (Ref.1) by solving a three-band extended Hubbard Hamiltonian for spinless fermions using the slave-boson approach, which also includes coupling to the local phonon modes. This model is suggested from the earlier density-functional studies of magnetite.(Ref.2) We first solve the 1D Hubbard model for the spinless fermions with nearest-neighbor interaction by both Gutzwiller variational and slave-boson methods and show that these two approaches yield different results unlike in the case of the standard Hubbard model, thereby clarifying some of the discrepancies in the literature (Ref.3), then we extend the formalism to three-band Hamiltonian for magnetite. The results suggest a metal-insulator transition at a critical value for the intersite interaction.

  8. Photoelectron spectromicroscopy study of metal-insulator transition in NaxWO3

    NASA Astrophysics Data System (ADS)

    Paul, Sanhita; Ghosh, Anirudha; Dudin, Pavel; Barinov, Alexei; Chakraborty, Anirban; Ray, Sugata; Sarma, D. D.; Oishi, Shuji; Raj, Satyabrata

    2013-07-01

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, NaxWO3 by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of NaxWO3 reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in NaxWO3. The possible origin of insulating phase in NaxWO3 is due to the Anderson localization of all the states near EF. The localization occurs because of the strong disorder arising from random distribution of Na+ ions in the WO3 lattice.

  9. Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

    SciTech Connect

    Paul, Sanhita Ghosh, Anirudha Raj, Satyabrata

    2014-04-24

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

  10. Disorder and metal-insulator transitions in Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Jiang, Hua; Chen, Chui-Zhen; Song, Juntao; Sun, Qing-Feng; Wang, Ziqiang; Xie, X. C.

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arcs surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions.(I) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional (3D) quantum anomalous Hall state. (II) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (III) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice.

  11. Disorder and Metal-Insulator Transitions in Weyl Semimetals

    NASA Astrophysics Data System (ADS)

    Chen, Chui-Zhen; Song, Juntao; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X. C.

    2015-12-01

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice.

  12. Direct measurement of sheet resistance Rsquare in cuprate systems: evidence of a fermionic scenario in a metal-insulator transition.

    PubMed

    Orgiani, P; Aruta, C; Balestrino, G; Born, D; Maritato, L; Medaglia, P G; Stornaiuolo, D; Tafuri, F; Tebano, A

    2007-01-19

    The metal-insulator transition (MIT) has been studied in Ba(0.9)Nd(0.1)CuO(2+x)/CaCuO2 ultrathin cuprate structures. Such structures allow for the direct measurement of the 2D sheet resistance R( square), eliminating ambiguity in the definition of the effective thickness of the conducting layer in high temperature superconductors. The MIT occurs at room temperature for experimental values of R(square) close to the 25.8 kOmega universal quantum resistance. All data confirm the assumption that each CaCuO2 layer forms a 2D superconducting sheet within the superconducting block, which can be described as weak-coupled equivalent sheets in parallel.

  13. Interaction-Driven Metal-Insulator Transition in Strained Graphene.

    PubMed

    Tang, Ho-Kin; Laksono, E; Rodrigues, J N B; Sengupta, P; Assaad, F F; Adam, S

    2015-10-30

    The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between π electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that, without strain, graphene remains metallic and changing the substrate from SiO_{2} to suspended samples hardly makes any difference. In contrast, applying a rather large-but experimentally realistic-uniform and isotropic strain of about 15% seems to be a promising route to making graphene an antiferromagnetic Mott insulator.

  14. Control of plasmonic nanoantennas by reversible metal-insulator transition

    DOE PAGES

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; ...

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in activemore » nanophotonics.« less

  15. Control of plasmonic nanoantennas by reversible metal-insulator transition

    SciTech Connect

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in active nanophotonics.

  16. Control of plasmonic nanoantennas by reversible metal-insulator transition

    PubMed Central

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-01-01

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics. PMID:26358623

  17. Pure electronic metal-insulator transition at the interface of complex oxides

    DOE PAGES

    Meyers, D.; Liu, Jian; Freeland, J. W.; ...

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

  18. Tuning directional dependent metal-insulator transitions in quasi-1D quantum wires with spin-orbit density wave instability

    NASA Astrophysics Data System (ADS)

    Das, Tanmoy

    2016-07-01

    We study directional dependent band gap evolutions and metal-insulator transitions (MITs) in model quantum wire systems within the spin-orbit density wave (SODW) model. The evolution of MIT is studied as a function of varying anisotropy between the intra-wire hopping ({{t}\\parallel} ) and inter-wire hopping ({{t}\\bot} ) with Rashba spin-orbit coupling. We find that as long as the anisotropy ratio (β ={{t}\\bot}/{{t}\\parallel} ) remains below 0.5, and the Fermi surface nesting is tuned to {{\\mathbf{Q}}1}=≤ft(π,0\\right) , an exotic SODW induced MIT easily develops, with its critical interaction strength increasing with increasing anisotropy. As β \\to 1 (2D system), the nesting vector switches to {{\\mathbf{Q}}2}=≤ft(π,π \\right) , making this state again suitable for an isotropic MIT. Finally, we discuss various physical consequences and possible applications of the directional dependent MIT.

  19. Metal-insulator transition in epitaxial NdNiO3 thin film: A structural, electrical and optical study

    NASA Astrophysics Data System (ADS)

    Shao, Tao; Qi, Zeming; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Hu, Chuansheng

    2017-03-01

    NdNiO3 thin film has been prepared by pulsed laser deposition on LaAlO3 (001) single crystalline substrate. Temperature-dependent resistivity measurement shows a sharp metal-insulator transition in such thin film. The phase transition temperature can be tuned from 90 K to 121 K by changing the thickness of thin film. The structure evolution during phase transition is studied by Raman spectroscopy. Optical conductivity reveals that the variation carrier density in the process of phase transition. The results of structural, electrical and optical studies provide useful insights to understand the mechanism of metal-insulator transition of NdNiO3 thin film.

  20. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    SciTech Connect

    Ito, Kota Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  1. Metal-Insulator Transition in the Hubbard Model: Correlations and Spiral Magnetic Structures

    NASA Astrophysics Data System (ADS)

    Timirgazin, Marat A.; Igoshev, Petr A.; Arzhnikov, Anatoly K.; Irkhin, Valentin Yu.

    2016-12-01

    The metal-insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the t-t^' Hubbard model at half-filling by using both the generalized for the case of spiral order Hartree-Fock approximation (HFA) and Kotliar-Ruckenstein slave-boson approach. It turns out that the magnetic scenario of MIT becomes superior over the non-magnetic one. The electron correlations lead to some suppression of the spiral phases in comparison with HFA. We found the presence of a metallic antiferromagnetic (spiral) phase in the case of three-dimensional lattices.

  2. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  3. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

    SciTech Connect

    Bubel, Simon; Glaudell, Anne M.; Mates, Thomas E.; Chabinyc, Michael L.; Hauser, Adam J.; Stemmer, Susanne

    2015-03-23

    For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO{sub 3} in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

  4. Moderate pressure synthesis of rare earth nickelate with metal-insulator transition using polymeric precursors

    SciTech Connect

    Napierala, C.; Lepoittevin, C.; Edely, M.; Sauques, L.; Giovanelli, F.; Laffez, P.; VanTedeloo, G.

    2010-07-15

    Rare earth nickelates exhibit a reversible metal-semiconductor phase transition that is, in the infrared range, responsible for a thermo-optical contrast. The state of the art synthesis of these compounds usually requires high oxygen pressure to stabilize Ni in the oxidation state 3{sup +}. In this work, using polymeric precursor associated with moderate pressure annealing, we show that it is possible to obtain fully oxidized rare earth nickelate with metal-insulator transition. Using thermogravimetric analysis, X-ray diffraction and transmission electronic microscopy we compare different samples synthesized at different oxygen pressures and demonstrate their structural similarity. Thermo-optical properties were measured, in the infrared range, using reflectance measurements and confirmed the metal-insulator transition at 60 {sup o}C in both samples.TEM observations lead to the conclusion that the structure commonly obtained at 175 bar is perfectly observed in the 20 bar sample without major structural defects. The two samples exhibit a thermochromic behavior and thermo-optical properties of the two samples are equivalent. - Graphical Abstract: Thermochromic behavior of Nd{sub 0.3}Sm{sub 0.7}NiO{sub 3} samples annealed under 20 and 175 bar at 278 and 373 K.

  5. Metal-insulator transition in disordered systems from the one-body density matrix

    NASA Astrophysics Data System (ADS)

    Olsen, Thomas; Resta, Raffaele; Souza, Ivo

    2017-01-01

    The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied to determine the metal-insulator transition in disordered systems. In particular, for noninteracting systems the geometrical marker can be obtained from the configurational average of the norm-squared one-body density matrix, which can be calculated within open as well as periodic boundary conditions. This is in sharp contrast to a classification based on the static conductivity, which is only sensible within periodic boundary conditions. We exemplify the method by considering a simple lattice model, known to have a metal-insulator transition as a function of the disorder strength, and demonstrate that the transition point can be obtained accurately from the one-body density matrix. The approach has a general ab initio formulation and could in principle be applied to realistic disordered materials by standard electronic structure methods.

  6. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    SciTech Connect

    Huber-Rodriguez, Benjamin; Ji, Heng; Chen, Chih-Wei; Kwang, Siu Yi; Hardy, Will J.; Morosan, Emilia; Natelson, Douglas

    2014-09-29

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO{sub 2} material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO{sub 2} powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  7. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Huber-Rodriguez, Benjamin; Kwang, Siu Yi; Hardy, Will J.; Ji, Heng; Chen, Chih-Wei; Morosan, Emilia; Natelson, Douglas

    2014-09-01

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO2 material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO2 powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  8. Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates.

    PubMed

    Mattoni, G; Zubko, P; Maccherozzi, F; van der Torren, A J H; Boltje, D B; Hadjimichael, M; Manca, N; Catalano, S; Gibert, M; Liu, Y; Aarts, J; Triscone, J-M; Dhesi, S S; Caviglia, A D

    2016-11-02

    Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is a local property, set by surface morphology and stable across multiple temperature cycles. Our data provide new insights into the MIT of heteroepitaxial nickelates and point to a rich, nanoscale phenomenology in this strongly correlated material.

  9. Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates

    NASA Astrophysics Data System (ADS)

    Mattoni, G.; Zubko, P.; Maccherozzi, F.; van der Torren, A. J. H.; Boltje, D. B.; Hadjimichael, M.; Manca, N.; Catalano, S.; Gibert, M.; Liu, Y.; Aarts, J.; Triscone, J.-M.; Dhesi, S. S.; Caviglia, A. D.

    2016-11-01

    Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order phase transitions, typically related to local symmetry breaking. Direct observation of emerging mixed-phase regions in materials showing a first-order metal-insulator transition (MIT) offers unique opportunities to uncover their driving mechanism. Using photoemission electron microscopy, we image the nanoscale formation and growth of insulating domains across the temperature-driven MIT in NdNiO3 epitaxial thin films. Heteroepitaxy is found to strongly determine the nanoscale nature of the phase transition, inducing preferential formation of striped domains along the terraces of atomically flat stepped surfaces. We show that the distribution of transition temperatures is a local property, set by surface morphology and stable across multiple temperature cycles. Our data provide new insights into the MIT of heteroepitaxial nickelates and point to a rich, nanoscale phenomenology in this strongly correlated material.

  10. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    SciTech Connect

    Lysenko, Sergiy Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph; Aparicio, Joaquin; Sepúlveda, Nelson

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  11. Diffusion Monte Carlo study of the metal-insulator transition in stretched graphene

    NASA Astrophysics Data System (ADS)

    Chen, Li; Wagner, Lucas K.

    At low energies and equilibrium geometries, graphene is well-described by a single-band Hubbard model, with U/t 1.4, which is well within the semimetal regime. One would expect that under tensile stress, U/t should increase and a transition from semimetal to Mott insulator should occur. However, the bonding σ electrons are also affected by the stretching and may affect the applicability of the single-band model. At the same time, the critical region near the metal-insulator transition is a highly multi-determinantal ground state which is a challenging case for fixed node diffusion Monte Carlo simulations. We address progress on both these points by assessing a number of wave functions for the critical region around the transition and assessing the validity of the single-band Hubbard model using the method of Ref 1. This work was supported by NSF DMR 1206242.

  12. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  13. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  14. Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO{sub 3}

    SciTech Connect

    Scagnoli, V.; Staub, U.; Mulders, A. M.; Janousch, M.; Meijer, G. I.; Hammerl, G.; Tonnerre, J. M.; Stojic, N.

    2006-03-01

    Soft x-ray resonant scattering at the Ni L{sub 2,3} edges is used to test models of magnetic- and orbital-ordering below the metal-insulator transition in NdNiO{sub 3}. The large branching ratio of the L{sub 3} to L{sub 2} intensities of the (1/2 0 1/2) reflection and the observed azimuthal angle and polarization dependence originates from a noncollinear magnetic structure. The absence of an orbital signal and the noncollinear magnetic structure show that the nickelates are materials for which orbital ordering is absent at the metal-insulator transition.

  15. Stable metal-insulator transition in epitaxial SmNiO{sub 3} thin films

    SciTech Connect

    Ha, Sieu D.; Otaki, Miho; Jaramillo, R.; Podpirka, Adrian; Ramanathan, Shriram

    2012-06-15

    Samarium nickelate (SmNiO{sub 3}) is a correlated oxide that exhibits a metal-insulator transition (MIT) above room temperature and is of interest for advanced electronics and optoelectronics. However, studies on SmNiO{sub 3} thin films have been limited to date, in part due to well-known difficulties in stabilizing the Ni{sup 3+} valence state during growth, which are manifested in non-reproducible electrical characteristics. In this work, we show that stable epitaxial SmNiO{sub 3} thin films can be grown by rf magnetron sputtering without extreme post-deposition annealing conditions using relatively high growth pressure (>200 mTorr). At low growth pressure, SmNiO{sub 3} is insulating and undergoes an irreversible MIT at {approx}430 K. As pressure is increased, films become metallic across a large temperature range from 100 to 420 K. At high pressure, films are insulating again but with a reversible and stable MIT at {approx}400 K. Phase transition properties can be continuously tuned by control of the sputtering pressure. - Graphical Abstract: X-ray diffraction (left) and resistivity-temperature characteristics (right) of sputtered SmNiO{sub 3} thin films as a function of sputtering pressure. As sputtering pressure increases, the out-of-plane lattice constant of SmNiO{sub 3} decreases, consistent with enhanced oxygen concentration. Concordantly, the electrical properties are strongly modified, and a reversible metal-insulator phase transition is observed at {approx}400 K in the film grown at high pressure. Highlights: Black-Right-Pointing-Pointer Stable SmNiO{sub 3} films grown by rf sputtering without extreme annealing conditions. Black-Right-Pointing-Pointer High sputtering pressures needed to fully stabilize SmNiO{sub 3}. Black-Right-Pointing-Pointer Reversible metal-insulator transition observed at {approx}400 K, similar to bulk. Black-Right-Pointing-Pointer Electrical properties strongly modifiable by varying sputtering pressure.

  16. Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition.

    PubMed

    Lee, Jin Hee; Gul, Hamza Zad; Kim, Hyun; Moon, Byoung Hee; Adhikari, Subash; Kim, Jung Ho; Choi, Homin; Lee, Young Hee; Lim, Seong Chu

    2017-02-08

    We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS2) by controlling the metal-insulator transition (MIT). N-type semiconducting MoS2 under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS2 is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron-electron scattering. Thus, no photocurrent is detected in metallic MoS2. Our results indicate that the photocurrent of MoS2 can be switched on/off by appropriately controlling the MIT transition by means of gate bias.

  17. Suppression of the weak localization near the metal-insulator transition in two dimensions

    NASA Astrophysics Data System (ADS)

    Rahimi, Maryam; Anissimova, S.; Sakr, M. R.; Kravchenko, S. V.; Klapwijk, T. M.

    2003-03-01

    We have studied the suppression of weak localization by perpendicular magnetic field in low-disordered two-dimensional electron systems in silicon for a range of electron densities. We show that the negative corrections to the resistance, found in the metallic phase, disappear in the vicinity of the metal-insulator transition. Our data suggest that localization is fully suppressed near and at the transition even in zero field, confirming similar results in ultra-clean p-GaAs/AlGaAs heterostructures [1] and verifying their universality. [1] A. P. Mills, A. P. Ramirez, X. P. A. Gao, L. N. Pfeiffer, K. W. West, and S. H. Simon, preprint cond-mat/0101020.

  18. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    PubMed Central

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  19. Electrodynamics of the conducting polymer polyaniline on the insulating side of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Helgren, Erik; Penney, Keith; Diefenbach, Matt; Longnickel, Maryna; Wainwright, Mark; Walker, Eldridge; Al-Azzawi, Sarah; Erhahon, Hendrix; Singley, Jason

    2017-03-01

    Conducting polymer samples of polyaniline (PANI) exhibit a dramatic change in their conductivity as a function of protonation level, analogous with the changes in the transport properties of semiconductors upon doping. In this paper, PANI samples were prepared by protonating with varying concentrations of hydrochloric acid. The complex terahertz frequency-dependent conductivity and the dc conductivity of these samples were measured and analyzed in the framework of the disorder-driven, metal-insulator quantum phase transition. The samples were determined to all fall in the insulating phase of this phase transition. The frequency dependence of both the real and imaginary terahertz conductivity are found to be consistent with theories that include electronic correlation effects.

  20. Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons.

    PubMed

    Adam, S; Cho, S; Fuhrer, M S; Das Sarma, S

    2008-07-25

    Transport in graphene nanoribbons with an energy gap in the spectrum is considered in the presence of random charged impurity centers. At low carrier density, we predict and establish that the system exhibits a density inhomogeneity driven two dimensional metal-insulator transition that is in the percolation universality class. For very narrow graphene nanoribbons (with widths smaller than the disorder induced length scale), we predict that there should be a dimensional crossover to the 1D percolation universality class with observable signatures in the transport gap. In addition, there should be a crossover to the Boltzmann transport regime at high carrier densities. The measured conductivity exponent and the critical density are consistent with this percolation transition scenario.

  1. Metal-insulator transitions of bulk and domain-wall states in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, Kentaro

    A family of pyrochlore iridates R2Ir2O7 offers an ideal platform to explore intriguing phases such as topological Mott insulator and Weyl semimetal. Here we report transport and spectroscopic studies on the metal-insulator transition (MIT) induced by the modulations of effective electron correlation and magnetic structures, which is finely tuned by external pressure, chemical substitutions (R = Nd1-x Prx and SmyNd1-y) , and magnetic field. A reentrant insulator-metal-insulator transition is observed near the paramagnetic insulator-metal phase boundary reminiscent of a first-order Mott transition for R = SmyNd1-y compounds (y~0.8). The metallic states on the magnetic domain walls (DWs), which are observed for R = Nd in real space as well as in transport properties, is simultaneously turned into the insulating one. These findings imply that the DW electronic state is intimately linked to the bulk states. For the mixed R = Nd1-x Prx compounds, the divergent behavior of resistivity with antiferromagnetic order is significantly suppressed by applying a magnetic field along [001] direction. It is attributed to the phase transition from the antiferromagnetic insulating state to the novel Weyl (semi-)metal state accompanied by the change of magnetic structure. The present study combined with experiment and theory suggests that there are abundant exotic phases with physical parameters such as electron correlation and Ir-5 d magnetic order pattern. Work performed in collaboration with J. Fujioka, B.-J. Yang, C. Terakura, N. Nagaosa, Y. Tokura (University of Tokyo, RIKEN CEMS), J. Shiogai, A. Tsukazaki, S. Nakamura, S. Awaji (Tohoku University). 1This work was supported by JSPS FIRST Program and Grant-in-Aid for Scientific Research (Grants No. 80609488 and No. 24224009).

  2. Metal-insulator-metal transition in NdNiO3 films capped by CoFe2O4

    NASA Astrophysics Data System (ADS)

    Saleem, M. S.; Song, C.; Peng, J. J.; Cui, B.; Li, F.; Gu, Y. D.; Pan, F.

    2017-02-01

    Metal-insulator transition features as a transformation from a highly charge conductive state to another state where the charge conductivity is greatly suppressed when decreasing the temperature. Here, we demonstrate two consecutive transitions in NdNiO3 films with CoFe2O4 capping, in which the metal-insulator transition occurs at ˜85 K, followed by an unprecedented insulator-metal transition below 40 K. The emerging insulator-metal transition associated with a weak antiferromagnetic behavior is observed in 20 unit cell-thick NdNiO3 with more than 5 unit cell CoFe2O4 capping. Differently, the NdNiO3 films with thinner CoFe2O4 capping only exhibit metal-insulator transition at ˜85 K, accompanied by a strong antiferromagnetic state below 40 K. Charge transfer from Co to Ni, instead of from Fe to Ni, formulates the ferromagnetic interaction between Ni-Ni and Ni-Co atoms, thus suppressing the antiferromagnetic feature and producing a metallic conductive behavior. Furthermore, a phase diagram for the metal-insulator-metal transition in this system is drawn.

  3. Hallmarks of Metal Insulator transition in Doped Sr2IrO4

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Wang, Qiang; Dhaka, Rajendra; Waugh, Justin; Reber, Theodore; Li, Haoxiang; Parham, Stephen; Zhou, Xiaoqing; Park, Seung Ryong; Qi, Tongfei; Korneta, Oleksandr; Plumb, Nicholas; Bostwick, Aaron; Rotenberg, Eli; Denlinger, Jonathan; Hermele, Michael; Cao, Gang; Dessau, Daniel

    2014-03-01

    How Mott insulators acquire metallicity upon the introduction of extra carriers lies at the heart of correlated electron physics. The evolution of the electronic structure and low energy dynamics in the ultra-low doped region where the Mottness begins to break down is a critical place to study this physics. We report ARPES studies of the Rh and La doped Sr2IrO4 and show the appearance and evolution of a pseudogap and Fermi arcs. Further more we present evidence how the Mott gap breaks down with a profound change in the band structure. The experimental results in the doped iridates resemble those observed in the cuprate systems, which are prototype Mott insulators, and suggest we could establish a series of signatures that occur in the metal insulator transition. Now at Los Alamos National Lab.

  4. Field-Induced Reversible Phase Manipulation in Metal-Insulator Transition using Scanning Tunneling Microscopy

    NASA Astrophysics Data System (ADS)

    Park, Se Jun

    2005-03-01

    Reversible electronic switching between insulating and metallic phases is a novel idea that may allow new types of field effect devices feasible.^1 Here we demonstrate the reversible manipulation between metallic and insulating phases in two-dimensional In nanowire arrays on Si(111) surface near the metal-insulator transition temperature (Tc). The electronic switching of phases was induced by local electric field applied by the probe tip of a scanning tunneling microscope. The field-dependent hysteresis behavior was also observed in tip height measurements as a function of the sample bias, under the constraint of constant tunneling current. A model including the intrinsic bi-stability of the nanometer-scale domains of In nanowire arrays will be discussed. ^1C. Ahn, J. Triscone, J. Mannhart, Nature 6952, 1015 (2003)

  5. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    SciTech Connect

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni; Hildebrand, Helga; Schmuki, Patrik

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  6. Metal-insulator transition in nanocomposite VOx films formed by anodic electrodeposition

    NASA Astrophysics Data System (ADS)

    Tsui, Lok-kun; Hildebrand, Helga; Lu, Jiwei; Schmuki, Patrik; Zangari, Giovanni

    2013-11-01

    The ability to grow VO2 films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VOx films by anodic electrodeposition of V2O5, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO2 stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ˜ -2.4%/ °C from 20 to 140 °C.

  7. Magnetically driven metal-insulator transition in NaOsO3.

    PubMed

    Calder, S; Garlea, V O; McMorrow, D F; Lumsden, M D; Stone, M B; Lang, J C; Kim, J-W; Schlueter, J A; Shi, Y G; Yamaura, K; Sun, Y S; Tsujimoto, Y; Christianson, A D

    2012-06-22

    The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb repulsion), Anderson (localization via disorder), and Peierls (localization via distortion of a periodic one-dimensional lattice) mechanisms. One additional route to a MIT proposed by Slater, in which long-range magnetic order in a three dimensional system drives the MIT, has received relatively little attention. Using neutron and x-ray scattering we show that the MIT in NaOsO(3) is coincident with the onset of long-range commensurate three dimensional magnetic order. While candidate materials have been suggested, our experimental methodology allows the first definitive demonstration of the long predicted Slater MIT.

  8. Magnetically Driven Metal-Insulator Transition in NaOsO3

    SciTech Connect

    Calder, Stuart A; Christianson, Andrew D; Lumsden, Mark D; Lang, Jonathan; Stone, Matthew B; McMorrow, D. F.; Garlea, Vasile O; Kim, Jong-Woo; Schlueter, J. A.; Shi, Y. G.; Yamaura, K.; Sun, Y. S.; Tsujimoto, Y.

    2012-01-01

    The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb repulsion), Anderson (localization via disorder), and Peierls (local- ization via distortion of a periodic one-dimensional lattice) mechanisms. One additional route to a MIT proposed by Slater, in which long-range magnetic order in a three dimensional system drives the MIT, has received relatively little attention. Using neutron and x-ray scattering we show that the MIT in NaOsO3 is coincident with the onset of long-range commensurate three dimensional magnetic order. While candidate materials have been suggested, our experimental methodology allows the first definitive demonstration of the long predicted Slater MIT.

  9. Mechanism of the metal-insulator transition of hollandite vanadate K2V8O16

    NASA Astrophysics Data System (ADS)

    Toriyama, T.; Konishi, T.; Ohta, Y.

    2012-12-01

    We make the electronic structure calculations of hollandite vanadate K2V8O16 using the generalized gradient approximation (GGA) in the density functional theory, where the Hubbard-type repulsive interaction U is taken into account (GGA+U). We in particular calculate the electronic structure of the low-temperature phase of this material using the crystal structure reported by Komarek et al. We find that the electronic wave functions near the Fermi level are predominantly of the dxy character and form the quasi-one-dimensional energy bands. The energy bands are made of the single chains of the VO6 octahedra rather than the double chains. The effects of strong electron correlations play an essential role here. Based on these results, we discuss possible mechanisms of the observed metal-insulator transition of this material.

  10. Local Peltier-effect-induced reversible metal-insulator transition in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-06-01

    We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal-insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  11. Mott metal-insulator transition in a metallic liquid - Gutzwiller molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Barros, Kipton; Chern, Gia-Wei; Batista, Cristian D.; Kress, Joel D.; Kotliar, Gabriel

    2015-03-01

    Molecular dynamics (MD) simulations are crucial to modern computational physics, chemistry, and materials science, especially when combined with potentials derived from density-functional theory. However, even in state of the art MD codes, the on-site Coulomb repulsion is only treated at the self-consistent Hartree-Fock level. This standard approximation may miss important effects due to electron correlations. The Gutzwiller variational method captures essential correlated-electron physics yet is much faster than, e.g., the dynamical-mean field theory approach. We present our efficient Gutzwiller-MD implementation. With it, we investigate the Mott metal-insulator transition in a metallic fluid and uncover several surprising static and dynamic properties of this system.

  12. Effects of Thickness on the Metal-Insulator Transition in Free-Standing Vanadium Dioxide Nanocrystals.

    PubMed

    Fadlelmula, Mustafa M; Sürmeli, Engin C; Ramezani, Mehdi; Kasırga, T Serkan

    2017-03-08

    Controlling solid state phase transitions via external stimuli offers rich physics along with possibilities of unparalleled applications in electronics and optics. The well-known metal-insulator transition (MIT) in vanadium dioxide (VO2) is one instance of such phase transitions emerging from strong electronic correlations. Inducing the MIT using electric field has been investigated extensively for the applications in electrical and ultrafast optical switching. However, as the Thomas-Fermi screening length is very short, for considerable alteration in the material's properties with electric field induced MIT, crystals below 10 nm are needed. So far, the only way to achieve thin crystals of VO2 has been via epitaxial growth techniques. Yet, stress due to lattice mismatch as well as interdiffusion with the substrate complicate the studies. Here, we show that free-standing vapor-phase grown crystals of VO2 can be milled down to the desired thickness using argon ion-beam milling without compromising their electronic and structural properties. Among our results, we show that even below 4 nm thickness the MIT persists and the transition temperature is lowered in two-terminal devices as the crystal gets thinner. The findings in this Letter can be applied to similar strongly correlated materials to study quantum confinement effects.

  13. New aspects of the metal-insulator transition in vanadium dioxide nanobeams

    NASA Astrophysics Data System (ADS)

    Cobden, David

    2010-03-01

    The fundamental properties of the famous metal-insulator phase transition in vanadium dioxide are obscured in traditional samples by domain structure. In contrast, single-crystal nanobeams of the material can be prepared in such a way that the frustration is absent, and the stress is zero or almost uniform, even while the transition is taking place. Studying nanobeams using a combination of transport and optical methods has allowed us to obtain a number of new results, including the following. First, the uniform metallic phase can be dramatically supercooled. Second, the so-called M2 insulating phase shows a temperature-independent resistivity at the transition, implicating electron-electron interactions in the controlling mechanism. Third, the M1 and M2 insulating phases have the same thermal electronic gap. Fourth, we establish a new phase diagram of the material as a function of stress along the rutile c-axis which helps to explain a number of recent experiments and some anomalies in the older literature. Work done in collaboration with Jiang Wei, Jae Park, Vinny Roma, Andrew Jones, Sam Berweger, and Markus Raschke.

  14. Critical behavior of ultrasonic attenuation near interaction-driven metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Dobrosavljević, V.; Kirkpatrick, T. R.; Chen, Changfeng; Belitz, D.

    1991-09-01

    We consider the critical behavior of the ultrasonic attenuation (UA) near interaction-driven metal-insulator transitions. To first order in the disorder no localization corrections are found. Using a field-theoretical nonlinear σ-model representation, and performing a renormalization-group analysis, we show that the absence of first-order corrections follows from the presence of two scaling parts for the UA. The critical exponents for the UA are shown to be sensitive to both the symmetry class and the interaction range, in contrast to the behavior of the conductivity. We have examined the cases of strong magnetic fields and of magnetic impurities where the critical exponents prove to be universal for Coulomb interactions, but are found to be nonuniversal for short-ranged interactions. The UA was further examined near the pseudomagnetic transition that occurs in the absence of magnetic perturbations. In that case, the UA critical exponents were found to vanish, indicating that the UA stays uncritical at this transition.

  15. Metal-Insulator Transitions in Epitaxial LaVO(3) and LaTiO(3) Films

    DTIC Science & Technology

    2012-08-01

    are insulating in the bulk—has led to an explosion of research activity in perovskite transition-metal oxide heterostructures. The most well-known...ADDRESSES U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 15. SUBJECT TERMS metal insulator transition, oxide ...effects must be duly taken into consideration when interpreting metallic behavior in these complex oxide heterostructures. This work is supported by the

  16. First-order metal-insulator transition and infrared identification of shape-controlled magnetite nanocrystals

    NASA Astrophysics Data System (ADS)

    Zheng, Lei; Su, Wei; Qi, Zeming; Xu, Yang; Zhou, Min; Xie, Yi

    2011-12-01

    The first-order metal-insulator transition (MIT) in magnetite has been known for a long time but is still controversial in its nature. In this study, well-defined magnetite nanocrystals (NCs) with controllable size, shape and terminated surface are first employed to elucidate this important issue, and new discoveries such as a highly suppressed phase transition temperature are identified by monitoring the variable-temperature electric resistance and infrared spectroscopy. Significantly, by carefully comparing the infrared vibrational bands of the as-prepared magnetite NCs with octahedral and cubic shapes, respectively, we found that these two forms of magnetite NCs exhibited different transmittance changes and frequency shifts of the infrared characteristics, presumably due to the differences in the lattice distortions on the corresponding {001} and {111} terminal surfaces. This result produced evidence in support of the charge ordering of Fe atoms along the low dimensionality at octahedral B sites undergoing the MIT. Taken together, infrared identification was proposed to be an available characterization strategy for MIT, which can reflect more information on the elusive lattice distortion of crystallographic structure or exposed surfaces.

  17. Magnetic states, correlation effects and metal-insulator transition in FCC lattice.

    PubMed

    Timirgazin, M A; Igoshev, P A; Arzhnikov, A K; Yu Irkhin, V

    2016-12-21

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals [Formula: see text]. In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most [Formula: see text]. The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on [Formula: see text]. The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  18. Magnetic states, correlation effects and metal-insulator transition in FCC lattice

    NASA Astrophysics Data System (ADS)

    Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

    2016-12-01

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  19. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Bohnenbuck, B.; Chuang, Y.-D.; Geck, J.; Tokura, Y.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Sawatzky, G. A.; Damascelli, A.

    2010-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate an incipient instability of the parent compound, are detected below the transition. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x˜0.05 Mn substitution. In collaboration with A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley Lab), I. Zegkinoglou, M.W. Haverkort (MPI, Stuttgart), I.S. Elfimov, D.G. Hawthorn (UBC), R. Mathieu, S. Satow, H. Takagi (Tokyo), H.-H. Wu and C. Sch"ußler-Langeheine (Cologne).

  20. Metal-insulator transitions in LaTiO3 / CaTiO3 superlattices

    NASA Astrophysics Data System (ADS)

    Seo, Sung Seok A.; Lee, Ho Nyung

    2010-03-01

    Strongly correlated electrons at an interface of complex oxide heterostructures often show interesting behaviors that require an introduction of new physical concepts. For example, the metallic transport behavior found in the superlattices of a Mott insulator LaTiO3 and a band insulator SrTiO3 (STO) has established the concept of interfacial electronic reconstruction. In this work, we have studied the transport property of a new type of Mott/band insulator LaTiO3/CaTiO3 (LTO/CTO) superlattices grown by pulsed laser deposition (PLD). In order to rule out concerns about the PLD plume-triggered oxygen vacancies generated in STO substrates, which might influence transport measurement, and to investigate the effect of epitaxial strain, we have used insulating NdGaO3 substrates. While both LTO and CTO single films are highly insulating, we have observed intriguing metal-insulator transitions (MIT) in the LTO/CTO superlattices depending on the global LTO/CTO thickness ratio and temperature. (Note that LTO/STO superlattices are metallic at all temperatures (2-300 K)). In this talk, we will discuss the origin of the MIT in the scheme of self compensation mechanism of d-electrons at the hetero-interface between LTO and CTO.

  1. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl

    NASA Astrophysics Data System (ADS)

    Naka, Takashi; Nikitin, Artem M.; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-01

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) γ . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state.

  2. Weak localization and the approach to metal-insulator transition in single crystalline germanium nanowires.

    PubMed

    Sett, Shaili; Das, K; Raychaudhuri, A K

    2017-03-22

    We study the low-temperature electronic transport properties of single germanium nanowires (NWs) with diameters down to 45 nm to investigate the weak localization (WL) behavior and approach to metal-insulator transition (MIT) within them. The NWs (single crystalline) we investigate lie on the metallic side of the MIT with an extrapolated zero temperature conductivity [Formula: see text] in the range 23 to 1790 [Formula: see text] cm)(-1) and show a temperature-dependent conductivity which below 30 K can be described by a 3D WL behavior with Thouless length [Formula: see text] and [Formula: see text]. From the observed value of [Formula: see text] and the value of the critical carrier concentration n c, it is observed that the approach to MIT can be described by the scaling equation [Formula: see text] with [Formula: see text], which is a value expected for an uncompensated system. The investigation establishes a NW size limit for the applicability of 3D scaling theories.

  3. Charge and orbital orderings associated with metal-insulator transition in V6O13

    NASA Astrophysics Data System (ADS)

    Toriyama, T.; Nakayama, T.; Konishi, T.; Ohta, Y.

    2014-08-01

    Density-functional-theory-based electronic-structure calculations are carried out to elucidate the mechanism of the metal-insulator transition (MIT) of a Wadsley-phase vanadium oxide V6O13. We show that, at the MIT, the orbitals occupied by electrons are reconstructed in the single trellis layers of the V(1) ions, which occurs simultaneously with the transfer of electrons from the V(2) to V(3) ions in the double trellis layers, leaving the V(2) ions nonmagnetic. We discuss that these changes lead to the formation of spin-singlet state associated with the ordering of the dyz and dxz orbitals in the V(1) zigzag chain, together with the formation of the Mott-insulator state with frustrated spin degrees of freedom in the zigzag ladder of the dxy orbitals of the V(3) ions; possible antiferromagnetic ordering patterns are predicted for the latter state. Thus, the spin-singlet and antiferromagnetic states coexist in spatially separated regions at lowest temperatures. The band Jahn-Teller-type instability hidden in the single trellis layer, which is the orbital ordering instability in the strong correlation limit, is suggested to cause the MIT.

  4. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Hippalgaonkar, Kedar; Lee, Sangwook; Ko, Changhyun; Yang, Fan; Suh, Joonki; Liu, Kai; Wang, Kevin; Zhang, Xiang; Dames, Chris; Wu, Junqiao

    In an electrically conductive solid, the Wiedemann-Franz (WF) law requires the electronic contribution to thermal conductivity to be proportional to the product of electrical conductivity and absolute temperature , where the ratio is the Lorenz number, typically not much different from the Sommerfeld value L0 = 2.44x10-8 W-ohm-K-2 at room temperature. The WF law reflects a basic property of metals where charge and heat are both carried by the same quasiparticles that both experience elastic scattering. At temperatures below the Debye temperature, the WF law has been experimentally shown to be robust in conventional conductors, with violations theoretically predicted or experimentally observed in strongly correlated electron systems or Luttinger liquids. However, the experimentally observed violations are at very low temperatures. Here we report breakdown of the WF law in a strongly correlated metal, in which the electronic thermal conductivity and L nearly vanish at temperatures above room temperature, where the electronic thermal conductivity amounts to only <~5% of the value expected from the WF law. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition.

  5. Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics.

    PubMed

    Chen, Yuanping; Sun, Y Y; Wang, H; West, D; Xie, Yuee; Zhong, J; Meunier, V; Cohen, Marvin L; Zhang, S B

    2014-08-22

    A three-dimensional elemental carbon kagome lattice, made of only fourfold-coordinated carbon atoms, is proposed based on first-principles calculations. Despite the existence of 60° bond angles in the triangle rings, widely perceived to be energetically unfavorable, the carbon kagome lattice is found to display exceptional stability comparable to that of C(60). The system allows us to study the effects of triangular frustration on the electronic properties of realistic solids, and it demonstrates a metal-insulator transition from that of graphene to a direct gap semiconductor in the visible blue region. By minimizing s-p orbital hybridization, which is an intrinsic property of carbon, not only the band edge states become nearly purely frustrated p states, but also the band structure is qualitatively different from any known bulk elemental semiconductors. For example, the optical properties are similar to those of direct-gap semiconductors GaN and ZnO, whereas the effective masses are comparable to or smaller than those of Si.

  6. Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

    NASA Astrophysics Data System (ADS)

    Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

    2007-03-01

    We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

  7. Novel Electronic Behavior Driving NdNiO3 Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Upton, M. H.; Choi, Yongseong; Park, Hyowon; Liu, Jian; Meyers, D.; Chakhalian, J.; Middey, S.; Kim, Jong-Woo; Ryan, Philip J.

    2015-07-01

    We present evidence that the metal-insulator transition (MIT) in a tensile-strained NdNiO3 (NNO) film is facilitated by a redistribution of electronic density and that it neither requires Ni charge disproportionation nor a symmetry change [U. Staub et al., Phys. Rev. Lett. 88, 126402 (2002); R. Jaramillo et al., Nat. Phys. 10, 304 (2014)]. Given that epitaxial tensile strain in thin NNO films induces preferential occupancy of the eg dx2-y2 orbital we propose that the larger transfer integral of this orbital state with the O 2 p orbital state mediates a redistribution of electronic density from the Ni atom. A decrease in the Ni dx2-y2 orbital occupation is directly observed by resonant inelastic x-ray scattering below the MIT temperature. Furthermore, an increase in the Nd charge occupancy is measured by x-ray absorption at the Nd L3 edge. Both spin-orbit coupling and crystal field effects combine to break the degeneracy of the Nd 5 d states, shifting the energy of the Nd eg dx2-y2 orbit towards the Fermi level, allowing the A site to become an active acceptor during the MIT. This work identifies the relocation of electrons from the Ni 3 d to the Nd 5 d orbitals across the MIT. We propose that the insulating gap opens between the Ni 3 d and O 2 p states, resulting from Ni 3 d electron localization. The transition seems to be neither a purely Mott-Hubbard transition nor a simple charge transfer.

  8. Mg doping of thermochromic VO2 films enhances the optical transmittance and decreases the metal-insulator transition temperature

    NASA Astrophysics Data System (ADS)

    Mlyuka, N. R.; Niklasson, G. A.; Granqvist, C. G.

    2009-10-01

    Thermochromic films of MgxV1-xO2 were made by reactive dc magnetron sputtering onto heated glass. The metal-insulator transition temperature decreased by ˜3 K/at. %Mg, while the optical transmittance increased concomitantly. Specifically, the transmittance of visible light and of solar radiation was enhanced by ˜10% when the Mg content was ˜7 at. %. Our results point at the usefulness of these films for energy efficient fenestration.

  9. Dynamics of the metal-insulator transition of donor-doped SrTi O3

    NASA Astrophysics Data System (ADS)

    Meyer, René; Zurhelle, Alexander F.; De Souza, Roger A.; Waser, Rainer; Gunkel, Felix

    2016-09-01

    The electrical properties of donor-doped SrTi O3 (n -STO) are profoundly affected by an oxidation-induced metal-insulator transition (MIT). Here we employ dynamical numerical simulations to examine the high-temperature MIT of n -STO over a large range of time and length scales. The simulations are based on the Nernst-Planck equations, the continuity equations, and the Poisson equation, in combination with surface lattice disorder equilibria serving as time-dependent boundary conditions. The simulations reveal that n -STO, upon oxidation, develops a kinetic space charge region (SCR) in the near-surface region. The surface concentrations of the variously mobile defects (electrons, Sr vacancies, and O vacancies) are found to vary over time and to differ considerably from the values of the new equilibrium. The formation of the SCR in which electrons are strongly depleted occurs within nanoseconds, i.e., it yields a fast MIT in the near-surface region during the oxidation process. As a result of charge (over-)compensation by Sr vacancies incorporated at the surface of n -STO, this SCR is much more pronounced than conventionally expected. In addition, we find an anomalous increase of O vacancy concentration at the surface upon oxidation caused by the SCR. Our simulations show that the SCR fades in the long term as a result of the slow in-diffusion of Sr vacancies. We discuss implications for the electrical conductivity of n -STO crystals used as substrates for epitaxial oxide thin films, of n -STO thin films and interfaces, and of polycrystalline n -STO with various functionalities.

  10. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    PubMed Central

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-01-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

  11. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    PubMed Central

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  12. Metal insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

    NASA Astrophysics Data System (ADS)

    Silwal, Punam; Miao, Ludi; Stern, Ilan; Zhou, Xiaolan; Hu, Jin; Ho Kim, Dae

    2012-01-01

    We have grown epitaxial thin films of spinel NiCo2O4 on single crystalline MgAl2O4 (001) substrates by pulsed laser deposition. Magnetization measurement revealed hysteresis loops consistent with the reported ferrimagnetic order. The electrical transport exhibits a metallic behavior with the lowest resistivity of 0.8 mΩ cm and a metal insulator transition around the Néel temperature. The systematic variation in the properties of the films grown at different growth temperatures indicates a close relationship between the magnetic order and electrical transport.

  13. Electrophoretic-like gating used to control metal-insulator transitions in electronically phase separated manganite wires.

    PubMed

    Guo, Hangwen; Noh, Joo H; Dong, Shuai; Rack, Philip D; Gai, Zheng; Xu, Xiaoshan; Dagotto, Elbio; Shen, Jian; Ward, T Zac

    2013-08-14

    Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.

  14. Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics.

    PubMed

    Wang, Le; Dash, Sibashisa; Chang, Lei; You, Lu; Feng, Yaqing; He, Xu; Jin, Kui-juan; Zhou, Yang; Ong, Hock Guan; Ren, Peng; Wang, Shiwei; Chen, Lang; Wang, Junling

    2016-04-20

    Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO₃ films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm³ due to the formation of strongly correlated Ni²⁺ t(2g)⁶e(g)² states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

  15. Metal-insulator transition in Bi-Pb-Sr-Ca-Y-Cu-O caused by a change in the structural modulation

    NASA Astrophysics Data System (ADS)

    Fukushima, Noburu; Yoshiki, Masahiko

    1994-07-01

    A metal-insulator transition was observed in the layered cuprate Bi2-xPbxSr2Ca0.3Y0.7Cu2O8+d, where the carrier concentration is not changed but the structural modulation was relaxed with increasing lead content x. Resistivity measurements and x-ray-photoelectron-spectroscopy (XPS) valence-band spectra manifested the occurrence of the metal-insulator transition; XPS core-level spectra, together with the results of a chemical analysis, confirmed that in this system the degree of the electron filling is constant. This metal-insulator transition is believed to arise from the change in the Cu-O-Cu bonding angle, as well as those in some nonlayered transition-metal perovskites.

  16. Magnetic and Metal-Insulator Transition in natural Transition Metal Sulfides

    NASA Astrophysics Data System (ADS)

    Wang, Renxiong; Metz, Tristin; Liu, I.-Lin; Wang, Kefeng; Wang, Xiangfeng; Jeffries, J. R.; Saha, S. R.; Greene, R. L.; Paglione, J.; Santelli, C. C.; Post, J.,

    In collaboration with the Smithsonian Institution's National Museum of Natural History, we present detailed studies of a class of natural minerals with potential to harbor correlated behavior. Transition metal sulfide minerals, such as Bornite (Cu5FeS4), are an important family of compounds known for their thermoelectric properties. We will present low temperature experimental studies of magnetic transitions and focus on a compound that exhibits a metal to insulator transition concident with entrance to an antiferromagnetic ground state, suggesting a potentially interesting system with promise for realizing new correlated states of matter in a naturally occurring mineral.

  17. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3 Ru 2 O 7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Zhu, Z. H.; Bohnenbuck, B.; Chuang, Y.-D.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Elfimov, I. S.; Sawatzky, G. A.; Damascelli, A.

    2011-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr 3 (Ru 1-x Mn x)2 O7 , performed at both Ru and Mn L -edges. Resonant magnetic superstructure reflections together with ab-initio density functional theory calculations identify the ground state as a spin checkerboard with blocks of 4 spins up and 4 spins down. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x ~ 0.05 Mn substitution. Perhaps more important, our results suggest that the same checkerboard instability might be present already in the parent compound Sr 3 Ru 2 O7 . In collaboration with: A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley) I. Zegkinoglou, M.W. Haverkort (MPI) J. Geck, D.G. Hawthorn (UBC) R. Mathieu, Y. Tokura, S. Satow, H. Takagi (Tokyo) H.-H. Wu and C. Schussler-Langeheine (Cologne).

  18. Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis

    NASA Astrophysics Data System (ADS)

    Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

    2010-12-01

    Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  19. Topological textures and metal-insulator transition in Reentrant Integer Quantum Hall Effect: role of disorder

    NASA Astrophysics Data System (ADS)

    Lyanda-Geller, Yuli; Simion, George

    2015-03-01

    We investigate a ground state of the two-dimensional (2D) electron liquid in the presence of disorder for Landau level filling factors, for which the re-entrant integer quantum Hall effect is observed. Our particular interest is the range of filling factors, which in a clean 2D system is favorable to formation of the two-electron (2e) bubble crystal. For the smooth random potential due to charged impurities placed far away from the 2D gas, the ground state is a lightly distorted 2e bubble crystal. However, for positively or negatively charged residual impurities located approximately within about three magnetic lengths from the 2D electrons, the ground state contains charged 2e complexes formed either by positively charged impurity and 3e defect bubble, or negatively charged impurity and 2e defect bubble. In the vicinity of 1e and 3e defect bubbles, the 2e bubbles of the crystal change their shape from round to elongated forming hedgehog (for 1e defect) or vortex (for 3e defect) textures. The topological textures due to these complexes interact with vortex and hedgehog excitations, generated as temperature increases that are not bound by residual impurities. The temperature of insulator to metal transition calculated with both bound and unbound defects agrees with experiment. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  20. Effect of Structural Relaxation on the Metal-Insulator Transition in Heavily Underdoped YBa $_2 2 Cu _3 3 O _{7-delta }$ 7 - δ Single Crystals

    NASA Astrophysics Data System (ADS)

    Vovk, R. V.; Dobrovolskiy, O. V.; Nazyrov, Z. F.; Kotvitskaya, K. A.; Chroneos, A.

    2015-08-01

    We report the results of a study of the effect of structural relaxation on the basal-plane conductivity of heavily underdoped high- YBaCuO single crystals. An increase of the oxygen deficiency in YBaCuO has been found to strengthen localization effects and to lead to the realization of a transition of the metal-insulator type, which always precedes the superconducting transition. In addition, a 5-day room-temperature annealing of the samples has been revealed to result in a notable shift of the metal-insulator transition point toward higher temperatures.

  1. Metal-insulator transition in the Hollandite vanadate K2V8O16 investigated by 51V NMR measurements

    NASA Astrophysics Data System (ADS)

    Okai, Katsunori; Itoh, Masayuki; Shimizu, Yasuhiro; Isobe, Masahiko; Yamaura, Jun-Ichi; Ueda, Yutaka

    2009-03-01

    51V NMR measurements have been made on powdered samples to investigate the metal-insulator (MI) transition and the local magnetic properties of the Hollandite vanadate K2V8O16 which undergoes the MI transition at TMI~170 K. An asymmetric 51V NMR spectrum in the metallic phase has the T-dependent negative Knight shift K. The two NMR spectra appears around TMI, showing the coexistence of the metallic and insulating phases in consistent with the two-step first-order transition. The temperature dependence of K and the 51V nuclear spin-lattice relaxation rate indicates the presence of the ferromagnetic spin fluctuations in the metallic phase. A 51V NMR spectrum observed below TMI has the temperature-independent K~0.35%, showing the presence of the nonmagnetic ground state.

  2. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    PubMed Central

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  3. Dynamically tracking the strain across the metal-insulator transition in VO2 measured using electromechanical resonators.

    PubMed

    Parikh, Pritesh; Chakraborty, Chitraleema; Abhilash, T S; Sengupta, Shamashis; Cheng, Chun; Wu, Junqiao; Deshmukh, Mandar M

    2013-10-09

    We study the strain state of doubly clamped VO2 nanobeam devices by dynamically probing resonant frequency of the nanoscale electromechanical device across the metal-insulator transition. Simultaneous resistance and resonance measurements indicate M1-M2 phase transition in the insulating state with a drop in resonant frequency concomitant with an increase in resistance. The resonant frequency increases by ~7 MHz with the growth of metallic domain (M2-R transition) due to the development of tensile strain in the nanobeam. Our approach to dynamically track strain coupled with simultaneous resistance and resonance measurements using electromechanical resonators enables the study of lattice-involved interactions more precisely than static strain measurements. This technique can be extended to other phase change systems important for device applications.

  4. Critical metal-insulator transition due to nuclear quantum effects in Mn-doped GaAs

    NASA Astrophysics Data System (ADS)

    Bae, Soungmin; Raebiger, Hannes

    2016-12-01

    Mn-doped GaAs exhibits a critical metal-insulator transition at the Mn concentration of xcrit≈1 % . Our self-interaction corrected first principles calculation shows that for Mn concentrations x ≳1 % , hole carriers are delocalized in host valence states, and for x ≲1 % , holes tend to be trapped in impurity-band-like states. We further show that for a finite range of concentrations around xcrit the system exhibits a nonadiabatic superposition of these states, i.e., a mixing of electronic and nuclear wave functions. This means that the phase transition is continuous, and its criticality is caused by quantum effects of the atomic nuclei. In other words, the apparently electronic phase transition from the insulator to metal state cannot be described by electronic effects alone.

  5. Mott metal-insulator transition induced by utilizing a glasslike structural ordering in low-dimensional molecular conductors

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Müller, Jens; Sasaki, Takahiko

    2014-11-01

    We utilize a glasslike structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt κ -(BEDT-TTF)2Cu [N (CN)2Br ]. In this material, the terminal ethylene groups of the BEDT-TTF molecules can adopt two different structural orientations within the crystal structure, namely eclipsed (E) and staggered (S) with the relative orientation of the outer C-C bonds being parallel and canted, respectively. These two conformations are thermally disordered at room temperature and undergo a glasslike ordering transition at Tg˜75 K. When cooling through Tg, a small fraction that depends on the cooling rate remains frozen in the S configuration, which is of slightly higher energy, corresponding to a controllable degree of structural disorder. We demonstrate that, when thermally coupled to a low-temperature heat bath, a pulsed heating current through the sample causes a very fast relaxation with cooling rates at Tg of the order of several 1000 K /min . The freezing of the structural degrees of freedom causes a decrease of the electronic bandwidth W with increasing cooling rate, and hence a Mott metal-insulator transition as the system crosses the critical ratio (W/U ) c of bandwidth to on-site Coulomb repulsion U . Due to the glassy character of the transition, the effect is persistent below Tg and can be reversibly repeated by melting the frozen configuration upon warming above Tg. Both by exploiting the characteristics of slowly changing relaxation times close to this temperature and by controlling the heating power, the materials can be fine-tuned across the Mott transition. A simple model allows for an estimate of the energy difference between the E and S state as well as the accompanying degree of frozen disorder in the population of the two orientations.

  6. Theory of the metal-insulator transition in Pr Ru4 P12 and Pr Fe4 P12

    NASA Astrophysics Data System (ADS)

    Curnoe, S. H.; Harima, H.; Takegahara, K.; Ueda, K.

    2004-12-01

    All symmetry-allowed couplings between the 4f2 -electron ground state doublet of trivalent praseodymium in PrRu4P12 and PrFe4P12 and displacements of the phosphorus, iron, or ruthenium ions are considered. Two types of displacements can change the crystal lattice from body-centred cubic to simple orthorhombic or to simple cubic. The first type lowers the point group symmetry from tetrahedral to orthorhombic, while the second type leaves it unchanged, with corresponding space group reductions Im3¯→Pmmm and Im3¯→Pm3¯ , respectively. In former case, the lower point group symmetry splits the degeneracy of the 4f2 doublet into states with opposite quadrupole moment, which then leads to antiquadrupolar ordering, as in PrFe4P12 . Either kind of displacement may conspire with nesting of the Fermi surface to cause the metal-insulator or partial metal-insulator transition observed in PrFe4P12 and PrRu4P12 . We investigate this scenario using band-structure calculations, and it is found that displacements of the phosphorus ions in PrRu4P12 (with space-group reduction Im3¯→Pm3¯ ) open a gap everywhere on the Fermi surface.

  7. Metal-Insulator Transition of strained SmNiO3 Thin Films: Structural, Electrical and Optical Properties

    PubMed Central

    Torriss, B.; Margot, J.; Chaker, M.

    2017-01-01

    Samarium nickelate (SmNiO3) thin films were successfully synthesized on LaAlO3 and SrTiO3 substrates using pulsed-laser deposition. The Mott metal-insulator (MI) transition of the thin films is sensitive to epitaxial strain and strain relaxation. Once the strain changes from compressive to tensile, the transition temperature of the SmNiO3 samples shifts to slightly higher values. The optical conductivity reveals the strong dependence of the Drude spectral weight on the strain relaxation. Actually, compressive strain broadens the bandwidth. In contrast, tensile strain causes the effective number of free carriers to reduce which is consistent with the d-band narrowing. PMID:28098240

  8. Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

    NASA Astrophysics Data System (ADS)

    Liao, G. M.; Chen, S.; Fan, L. L.; Chen, Y. L.; Wang, X. Q.; Ren, H.; Zhang, Z. M.; Zou, C. W.

    2016-04-01

    Insulator to metal phase transitions driven by external electric field are one of the hottest topics in correlated oxide study. While this electric triggered phenomena always mixes the electric field switching effect and joule thermal effect together, which are difficult to clarify the intrinsic mechanism. In this paper, we investigate the dynamical process of voltage-triggered metal-insulator transition (MIT) in a VO2 crystal film and observe the temperature dependence of the threshold voltages and switching delay times, which can be explained quite well based on a straightforward joule thermal model. By conducting the voltage controlled infrared transmittance measurement, the delayed infrared transmission change is also observed, further confirming the homogeneous switching process for a large-size film. All of these results show strong evidences that joule thermal effect plays a dominated role in electric-field-induced switching of VO2 crystal.

  9. Metal-Insulator Transition of strained SmNiO3 Thin Films: Structural, Electrical and Optical Properties

    NASA Astrophysics Data System (ADS)

    Torriss, B.; Margot, J.; Chaker, M.

    2017-01-01

    Samarium nickelate (SmNiO3) thin films were successfully synthesized on LaAlO3 and SrTiO3 substrates using pulsed-laser deposition. The Mott metal-insulator (MI) transition of the thin films is sensitive to epitaxial strain and strain relaxation. Once the strain changes from compressive to tensile, the transition temperature of the SmNiO3 samples shifts to slightly higher values. The optical conductivity reveals the strong dependence of the Drude spectral weight on the strain relaxation. Actually, compressive strain broadens the bandwidth. In contrast, tensile strain causes the effective number of free carriers to reduce which is consistent with the d-band narrowing.

  10. Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal-insulator transition.

    PubMed

    Mundy, Julia A; Hikita, Yasuyuki; Hidaka, Takeaki; Yajima, Takeaki; Higuchi, Takuya; Hwang, Harold Y; Muller, David A; Kourkoutis, Lena F

    2014-03-17

    Electronic changes at polar interfaces between transition metal oxides offer the tantalizing possibility to stabilize novel ground states yet can also cause unintended reconstructions in devices. The nature of these interfacial reconstructions should be qualitatively different for metallic and insulating films as the electrostatic boundary conditions and compensation mechanisms are distinct. Here we directly quantify with atomic-resolution the charge distribution for manganite-titanate interfaces traversing the metal-insulator transition. By measuring the concentration and valence of the cations, we find an intrinsic interfacial electronic reconstruction in the insulating films. The total charge observed for the insulating manganite films quantitatively agrees with that needed to cancel the polar catastrophe. As the manganite becomes metallic with increased hole doping, the total charge build-up and its spatial range drop substantially. Direct quantification of the intrinsic charge transfer and spatial width should lay the framework for devices harnessing these unique electronic phases.

  11. Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

    NASA Astrophysics Data System (ADS)

    Ang, R.; Miyata, Y.; Ieki, E.; Nakayama, K.; Sato, T.; Liu, Y.; Lu, W. J.; Sun, Y. P.; Takahashi, T.

    2013-09-01

    We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.

  12. Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

    NASA Astrophysics Data System (ADS)

    Kim, Bong-Jun; Lee, Yong Wook; Chae, Byung-Gyu; Yun, Sun Jin; Oh, Soo-Young; Kim, Hyun-Tak; Lim, Yong-Sik

    2007-01-01

    For VO2-based two-terminal devices, the first-order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to TSPT≈68°C and becomes maximum at TSPT. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the VO2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program.

  13. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

    SciTech Connect

    Stone, P.R.; Alberi, K.; Tardif, S.K.Z.; Beeman, J.W.; Yu, K.M.; Walukiewicz, W.; Dubon, O.D.

    2008-02-07

    We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4percent of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 percent As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 percent P (1percent N) into the As sublattice.

  14. Resistivity of the insulating phase approaching the two-dimensional metal-insulator transition: The effect of spin polarization

    NASA Astrophysics Data System (ADS)

    Li, Shiqi; Sarachik, M. P.

    2017-01-01

    The resistivities of the dilute, strongly interacting two-dimensional electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping ρ (T ) =ρ0exp[(TES/T ) 1 /2] , with TE S and 1 /ρ0 mapping onto each other if one applies a shift of the critical density nc reported earlier. With and without magnetic field, the parameters TE S and 1 /ρ0=σ0 exhibit scaling consistent with critical behavior approaching a metal-insulator transition.

  15. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.

  16. Effect of crystal-field splitting and interband hybridization on the metal-insulator transitions of strongly correlated systems

    NASA Astrophysics Data System (ADS)

    Poteryaev, Alexander I.; Ferrero, Michel; Georges, Antoine; Parcollet, Olivier

    2008-07-01

    We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.

  17. Tuning the metal-insulator transition temperature of Sm0.5Nd0.5NiO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gardner, H. Jeffrey; Singh, Vijay; Zhang, Le; Hong, Xia

    2014-03-01

    We have investigated the effect of substrate induced strain and film thickness on the metal-insulator transition of the correlated oxide Sm0.5Nd0.5NiO3 (SNNO). We have fabricated epitaxial 3 - 40 nm thick SNNO films on (001) LaAlO3 (LAO), (001) SrTiO3 (STO), and (110) NdGaO3 (NGO) via off-axis RF magnetron sputtering. The SNNO films are atomically smooth with (001) orientation as determined by atomic force microscopy and x-ray diffraction. SNNO films grown on LAO, subject to compressive strain, exhibit a sharp metal-insulator transition at lower temperatures. Conversely, films grown on STO and NGO, subject to tensile strain, exhibit a smeared albeit above room temperature metal-insulator transition. For all substrates, we have observed that the metal-insulator transition temperature (TMI) increases monotonically with decreasing film thickness until the electrically dead layer is reached (below 4 nm). We discuss the effect of strain and oxygen deficiencies on the TMI of SNNO thin films.

  18. Magnetic and metal-insulator transitions in coupled spin-fermion systems

    SciTech Connect

    Mondaini, R.; Paiva, T.; Scalettar, R. T.

    2014-10-14

    We use quantum Monte Carlo to determine the magnetic and transport properties of coupled square lattice spin and fermionic planes as a model for a metal-insulator interface. Specifically, layers of Ising spins with an intra-layer exchange constant J interact with the electronic spins of several adjoining metallic sheets via a coupling JH. When the chemical potential cuts across the band center, that is, at half-filling, the Neel temperature of antiferromagnetic (J > 0) Ising spins is enhanced by the coupling to the metal, while in the ferromagnetic case (J < 0) the metallic degrees of freedom reduce the ordering temperature. In the former case, a gap opens in the fermionic spectrum, driving insulating behavior, and the electron spins also order. This induced antiferromagnetism penetrates more weakly as the distance from the interface increases, and also exhibits a non-monotonic dependence on JH. For doped lattices an interesting charge disproportionation occurs where electrons move to the interface layer to maintain half-filling there.

  19. Magnetic and metal-insulator transitions in coupled spin-fermion systems

    DOE PAGES

    Mondaini, R.; Paiva, T.; Scalettar, R. T.

    2014-10-14

    We use quantum Monte Carlo to determine the magnetic and transport properties of coupled square lattice spin and fermionic planes as a model for a metal-insulator interface. Specifically, layers of Ising spins with an intra-layer exchange constant J interact with the electronic spins of several adjoining metallic sheets via a coupling JH. When the chemical potential cuts across the band center, that is, at half-filling, the Neel temperature of antiferromagnetic (J > 0) Ising spins is enhanced by the coupling to the metal, while in the ferromagnetic case (J < 0) the metallic degrees of freedom reduce the ordering temperature.more » In the former case, a gap opens in the fermionic spectrum, driving insulating behavior, and the electron spins also order. This induced antiferromagnetism penetrates more weakly as the distance from the interface increases, and also exhibits a non-monotonic dependence on JH. For doped lattices an interesting charge disproportionation occurs where electrons move to the interface layer to maintain half-filling there.« less

  20. β phase and γ-β metal-insulator transition in multiferroic BiFeO3

    NASA Astrophysics Data System (ADS)

    Palai, R.; Katiyar, R. S.; Schmid, H.; Tissot, P.; Clark, S. J.; Robertson, J.; Redfern, S. A. T.; Catalan, G.; Scott, J. F.

    2008-01-01

    We report on extensive experimental studies on thin film, single crystal, and ceramics of multiferroic bismuth ferrite BiFeO3 using differential thermal analysis, high-temperature polarized light microscopy, high-temperature and polarized Raman spectroscopy, high-temperature x-ray diffraction, dc conductivity, optical absorption and reflectivity, and domain imaging, and show that epitaxial (001) thin films of BiFeO3 are clearly monoclinic at room temperature, in agreement with recent synchrotron studies but in disagreement with all other earlier reported results. We report an orthorhombic order-disorder β phase between 820 and 925 (±5)°C , and establish the existence range of the cubic γ phase between 925 (±5) and 933 (±5)°C , contrary to all recent reports. We also report the refined Bi2O3-Fe2O3 phase diagram. The phase transition sequence rhombohedral-orthorhombic-cubic in bulk [monoclinic-orthorhombic-cubic in (001)BiFeO3 thin film] differs distinctly from that of BaTiO3 . The transition to the cubic γ phase causes an abrupt collapse of the band gap toward zero (insulator-metal transition) at the orthorhombic-cubic β-γ transition around 930°C . Our band structure models, high-temperature dc resistivity, and light absorption and reflectivity measurements are consistent with this metal-insulator transition.

  1. Linear-in-temperature resistivity close to a topological metal insulator transition in ultra-multi valley fcc-ytterbium

    NASA Astrophysics Data System (ADS)

    Enderlein, Carsten; Fontes, Magda; Baggio-Saitovich, Elisa; Continentino, Mucio A.

    2016-01-01

    The semimetal-to-semiconductor transition in fcc-Yb under modest pressure can be considered a picture book example of a metal-insulator transition of the Lifshitz type. We have performed transport measurements at low temperatures in the closest vicinity of the transition and related DFT calculations of the Fermi surface. Our resistivity measurements show a linear temperature dependence with an unusually low dρ / dT at low temperatures approaching the MIT. The calculations suggest fcc-ytterbium being an ultra-multi valley system with 24 electron and 6 hole pockets in the Brillouin zone. Such Fermi surface topology naturally supports the appearance of strongly correlated phases. An estimation of the quasiparticle-enhanced effective mass shows that the scattering rate is by at least two orders of magnitude lower than in other materials which exhibit linear-in-T behavior at a quantum critical point. However, we cannot exclude an excessive effective mass enhancement, when the van Hove singularity touches the Fermi level.

  2. Three-terminal field effect switches probing the electrically triggered Metal-Insulator Transition in Vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Gopalakrishnan, Gokul; Ko, Changhyun; Ruzmetov, Dmitry; Narayanamurti, Venkatesh; Ramanathan, Shriram

    2010-03-01

    Electrostatic control of the Metal-Insulator Transition (MIT) in correlated oxides is valuable, both as a probe of the nature of the phase transition, as well as being a critical aspect of novel switching devices based on Mott insulators. Of much recent interest among this class of materials, is vanadium dioxide (VO2), a correlated semiconductor which exhibits a thermally induced MIT close to room temperature, and has also been shown to undergo an ultra-fast switching of conductivity by optical and electrical means. Among many of the experiments demonstrating an electrically triggered transition, however, the attendant phenomenon of Joule heating in the current channel raises questions about the triggering mechanism. To carefully address this issue, we explore the fabrication of three terminal field-effect devices, in which the resistance of a VO2 based channel may be modulated by a gate electric field in the absence of any significant current induced heating. In this talk we present details of the fabrication, the technical challenges involved in implementing them, and results of gated I-V measurements performed on these devices along with our interpretation of the observed effects.

  3. Dynamic phase coexistence and non-Gaussian resistance fluctuations in VO2 near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Samanta, Sudeshna; Raychaudhuri, A. K.; Zhong, Xing; Gupta, A.

    2015-11-01

    We have carried out an extensive investigation on the resistance fluctuations (noise) in an epitaxial thin film of VO2 encompassing the metal-insulator transition (MIT) region to investigate the dynamic phase coexistence of metal and insulating phases. Both flicker noise as well as the Nyquist noise (thermal noise) were measured. The experiments showed that flicker noise, which has a 1 /f spectral power dependence, evolves with temperature in the transition region following the evolution of the phase fractions and is governed by activated kinetics. Importantly, closer to the insulating end of the transition, when the metallic phase fraction is low, the magnitude of the noise shows an anomaly and a strong non-Gaussian component of noise develops. In this region, the local electron temperature (as measured through the Nyquist noise thermometry) shows a deviation from the equilibrium bath temperature. It is proposed that this behavior arises due to current crowding where a substantial amount of the current is carried through well separated small metallic islands leading to a dynamic correlated current path redistribution and an enhanced effective local current density. This leads to a non-Gaussian component to the resistance fluctuation and an associated local deviation of the electron temperature from the bath. Our experiment establishes that phase coexistence leads to a strong inhomogeneity in the region of MIT that makes the current transport strongly inhomogeneous and correlated.

  4. Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device

    NASA Astrophysics Data System (ADS)

    Khan, Abdul Karim; Lee, Byoung Hun

    2016-09-01

    Memcapacitor model based on its one possible physical realization is developed and simulated in order to know its limitation before making a real device. The proposed device structure consists of vertically stacked dielectric layer and MoS2 monolayer between two external metal plates. The Metal Insulator Transition (MIT) phenomenon of MoS2 monolayer is represented in terms of percolation probabilty which is used as the system state. Cluster based site percolation theory is used to mimic the MIT of MoS2 which shows slight discontinuous change in MoS2 monolayer conductivity. The metal to insulator transition switches the capacitance of the device in hysterical way. An Ioffe Regel criterion is used to determine the MIT state of MoS2 monolayer. A good control of MIT time in the range of psec is also achieved by changing a single parameter in the model. The model shows memcapacitive behavior with an edge of fast switching (in psec range) over the previous general models. The model is then extended into vertical cascaded version which behaves like a ternary device instead of binary.

  5. Reversible metal-insulator transition of Ar-irradiated LaAl O3 /SrTi O3 interfaces

    NASA Astrophysics Data System (ADS)

    Aurino, P. P.; Kalabukhov, A.; Tuzla, N.; Olsson, E.; Klein, A.; Erhart, P.; Boikov, Y. A.; Serenkov, I. T.; Sakharov, V. I.; Claeson, T.; Winkler, D.

    2015-10-01

    The conducting state of a quasi-two-dimensional electron gas (q2DEG), formed at the heterointerface between the two wide-bandgap insulators LaAl O3 (LAO) and SrTi O3 , can be made completely insulating by low-energy, 150-eV, A r+ irradiation. The metallic behavior of the interface can be recovered by high-temperature oxygen annealing. The electrical transport properties of the recovered q2DEG are exactly the same as before the irradiation. Microstructural investigations confirm that the transition is not due to physical etching or crystal lattice distortion of the LAO film below its critical thickness. They also reveal a correlation between electrical state, LAO film surface amorphization, and argon ion implantation. The experimental results are in agreement with density functional theory calculations of Ar implantation and migration in the LAO film. This suggests that the metal-insulator transition may be caused by charge trapping in the defect amorphous layer created during the ion irradiation.

  6. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Zhang, Angran; Huang, Mingju

    2017-03-01

    High-quality vanadium oxide ( VO2) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO2 has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO2 thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm.

  7. A persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film.

    PubMed

    Snijders, Paul C; Gao, Min; Guo, Hangwen; Cao, Guixin; Siemons, Wolter; Gao, Hongjun; Ward, Thomas Z; Shen, Jian; Gai, Zheng

    2013-10-21

    The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in e.g. catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surfaces of oxygen-deficient complex oxides, we report on in situ temperature dependent scanning tunnelling spectroscopy experiments on pristine oxygen deficient, epitaxial manganite films. Although these films are insulating in subsequent ex situ in-plane electronic transport experiments at all temperatures, in situ scanning tunnelling spectroscopic data reveal that the surface of these films exhibits a metal-insulator transition (MIT) at 120 K, coincident with the onset of ferromagnetic ordering of small clusters in the bulk of the oxygen-deficient film. The surprising proximity of the surface MIT transition temperature of nonstoichiometric films with that of the fully oxygenated bulk suggests that the electronic properties in the surface region are not significantly affected by oxygen deficiency in the bulk. This carries important implications for the understanding and functional design of complex oxides and their interfaces with specific electronic properties in catalysis, oxide electronics and electrochemistry.

  8. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    SciTech Connect

    Regan, Michael J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous FexGe1-x and MoxGe1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x<0.2), no films appear isotropic nor homogeneous through the metal/insulator transition. The results indicate that fluctuations in the growth direction play a pivotal role in preventing simple growth models of a columnar structure or one that evolves systematically as it grows. The anomalous scattering measurements identify the metal atoms (Fe or Mo) as the source of the anisotropy, with the Ge atoms distributed homogeneously. The author has developed a method for using these measurements to determine the compositions of the phase-separating species. The results indicate phase separation into an amorphous Ge and an intermetallic phase of stoichiometry close to FeGe2or MoGe3. Finally, by manipulating the deposited power flux and rates of growth, FexGe1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys.

  9. Variation of optical conductivity spectra in the course of bandwidth-controlled metal-insulator transitions in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, K.; Fujioka, J.; Tokura, Y.

    2016-06-01

    We spectroscopically investigate a series of pyrochlore iridates R2Ir2O7 (R : rare-earth and Y ions) where the metal-insulator transitions are induced by systematic bandwidth control via chemical substitutions of R ions. We establish the phase diagram of R2Ir2O7 , as endorsed by the variation of the optical conductivity spectra, in which the competing phases including paramagnetic insulator (PI), paramagnetic metal (PM), and antiferromagnetic insulator (AFI) show up as a function of bandwidth and temperature. For small R -ionic radius (R = Y-Sm), i.e., strongly correlated region, pronounced peaks on the edge of the optical gap are discerned below the magnetic transition temperature TN, which is attributable to exciton and magnon sideband absorptions. It turns out that the estimated nearest-neighbor exchange interaction increases as R -ionic radius increases, whereas TN monotonically decreases, indicating that the all-in all-out magnetic order arises from the interplay among several exchange interactions inherent to extended 5 d orbitals on the frustrated lattice. For larger R -ionic radius (R = Sm-Pr), i.e., relatively weakly correlated region, the optical conductivity spectra markedly change below 0.3 eV in the course of PM-AFI transition, implying that the magnetic order induces the insulating state. In particular, we have found distinct electrodynamics in the composition of R =Nd0.5Pr0.5 which is located on the boundary of the quantum PM-AFI transition, pointing to the possible emergence of unconventional topological electronic phases related possibly to the correlated Weyl electrons.

  10. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  11. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    NASA Astrophysics Data System (ADS)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  12. Metal-insulator transition in RbC60 polymer fulleride studied by ESR and electron-spin relaxation

    NASA Astrophysics Data System (ADS)

    Atsarkin, V. A.; Demidov, V. V.; Vasneva, G. A.

    1997-10-01

    The ESR intensity, line shape, and longitudinal electron-spin relaxation in the polymer phase of the RbC60 fulleride are investigated in the temperature range 4.2metal-insulator transition region (25-50 K). It is found that below 50 K the ESR line can be separated into two Lorentzian components ascribed to conduction electrons and some localized paramagnetic centers (with concentration of about 0.03 per formula unit) with allowance made for the relaxation bottleneck. The decrease of the conduction-electron susceptibility obeys an activation law with the characteristic energy Δ/kB=80+/-10 K related to the opening of a gap 2Δ~100 cm -1. The same quantity is found by analyzing both longitudinal and transverse relaxation caused by fluctuations of internal fields with correlation time τc~ exp(2Δ/kBT). Below 25 K, the temperature dependencies of the linewidth and the relaxation times change abruptly, revealing the development of a new ordered state. The nature of this state is discussed.

  13. Tuning the metal-insulator transition in NdNiO3 heterostructures via Fermi surface instability and spin fluctuations

    NASA Astrophysics Data System (ADS)

    Dhaka, R. S.; Das, Tanmoy; Plumb, N. C.; Ristic, Z.; Kong, W.; Matt, C. E.; Xu, N.; Dolui, Kapildeb; Razzoli, E.; Medarde, M.; Patthey, L.; Shi, M.; Radović, M.; Mesot, Joël

    2015-07-01

    We employed in situ pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO3 (NNO) thin films, grown on NdGaO3(110) and LaAlO3(100) substrates. In the metallic phase, we observe three-dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with QAF˜(1 /4 ,1 /4 ,1 /4 ±δ ) .

  14. Electric field induced metal-insulator transition and colossal magnetoresistance in CdCr2S4

    NASA Astrophysics Data System (ADS)

    Sun, C. P.; Lin, C. C.; Her, J. L.; Taran, S.; Chou, C. C.; Chan, C. L.; Huang, C. L.; Berger, H.; Yang, H. D.

    2008-03-01

    Multiferroic ordering existing in a single material is a recent hot topic in the field of condensed matter physics due to its potential application in device control. The chromium chalcogenide spinel CdCr2S4 is one of the attractive materials investigated by Hemberger et al. recently.[1] Based on the electrical measurement, there is no discontinuity through the ferromagnetic ordering at TC ˜ 85K.[2] We measure the temperature dependent resistance under various electric fields to investigate the electrical properties of the present material. To our knowledge, we first observe the electric field induced metal-insulator transition in this material around TC. Moreover, a colossal magnetoresistance (CMR), which is comparable to that of manganese-based CMR material, is also observed near TC. The origin for these properties is discussed. [1] J. Hemberger, P. Lunkenheimer, R. Fichtl, H.-A. Krug von Nidda, V. Tsurkan, A. Loidl, Nature 434, 364 (2006). [2] P. K. Baltzer, H. W. Lehmann, and M. Robbins, Phys. Rev. Lett. 15, 493 (1965).

  15. Variable-range hopping conduction and metal-insulator transition in amorphous RexSi1-x thin films

    NASA Astrophysics Data System (ADS)

    Lisunov, K. G.; Vinzelberg, H.; Arushanov, E.; Schumann, J.

    2011-09-01

    Resistivity, ρ(T), of the amorphous RexSi1-x thin films with x = 0.285-0.351 is investigated in the interval of T ~ 300-0.03 K. At x = 0.285-0.324 the activated behavior of ρ(T) is governed by the Mott and the Shklovskii-Efros variable-range hopping (VRH) conduction mechanisms in different temperature intervals and the three-dimensional regime of the hopping. Between x = 0.328 and 0.351 the activationless dependence of ρ(T) takes place. The critical behavior of the characteristic VRH temperatures and of the Coulomb gap, Δ, pertinent to proximity to the metal-insulator transition at the critical value of xc ≈ 0.327, is observed. The analysis of the critical behavior of Δ yields directly the critical exponent of the dielectric permittivity, η = 2.1 ± 0.2, in agreement with the theoretical prediction, η = 2. On the other hand, the values of the critical exponent of the correlation length ν ~ 0.8-1.1 close to the expected value of unity can be obtained from the analysis of the critical behavior of the VRH characteristic temperatures under an additional assumption of a strong underbarrier scattering of hopping charge carriers in conditions, when the concentration of scattering centers considerably exceeds the concentration of sites involved in the hopping.

  16. Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  17. Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

    NASA Astrophysics Data System (ADS)

    Hooda, M. K.; Yadav, C. S.

    2016-06-01

    We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m*~8me) in the metallic state indicates the narrow character of the 3d band. The electric conduction at low temperatures (T=2-20 K) is governed by the variable range hopping of the charge carriers.

  18. Mg doping of thermochromic VO{sub 2} films enhances the optical transmittance and decreases the metal-insulator transition temperature

    SciTech Connect

    Mlyuka, N. R.; Niklasson, G. A.; Granqvist, C. G.

    2009-10-26

    Thermochromic films of Mg{sub x}V{sub 1-x}O{sub 2} were made by reactive dc magnetron sputtering onto heated glass. The metal-insulator transition temperature decreased by {approx}3 K/at. %Mg, while the optical transmittance increased concomitantly. Specifically, the transmittance of visible light and of solar radiation was enhanced by {approx}10% when the Mg content was {approx}7 at. %. Our results point at the usefulness of these films for energy efficient fenestration.

  19. Compositionally controlled metal-insulator transition in Tl{sub 2-x}In{sub x}TeO{sub 6}

    SciTech Connect

    Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

    2011-04-15

    Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} are both known to crystallize in the Na{sub 2}SiF{sub 6}-type structure. We find Tl{sub 2}TeO{sub 6} is metallic, whereas In{sub 2}TeO{sub 6} is an insulator. We have prepared a complete Tl{sub 2-x}In{sub x}TeO{sub 6} series in a search for a compositionally controlled metal-insulator transition that might be expected if a complete solid solution can be obtained. Unit cell edges and volume vary monotonically with no indication of a miscibility gap. The metal-insulator transition occurs at an x value of about 1.4, which can be rationalized on a percolation model. No superconductivity could be detected down to 5 K. -- Graphical abstract: A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5. No superconductivity could be detected down to 5 K. Display Omitted Research highlights: {yields} A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. {yields} A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5, which can be rationalized on a percolation model. {yields} No superconductivity could be detected down to 5 K.

  20. Doping-driven metal-insulator transitions and charge orderings in the extended Hubbard model

    NASA Astrophysics Data System (ADS)

    Kapcia, K. J.; Robaszkiewicz, S.; Capone, M.; Amaricci, A.

    2017-03-01

    We perform a thorough study of the extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using the dynamical mean-field theory we investigated the zero-temperature phase diagram of this model as a function of the chemical doping. The interplay between local and nonlocal interactions drives a variety of phase transitions connecting two distinct charge-ordered insulators, i.e., half filled and quarter filled, a charge-ordered metal and a Mott-insulating phase. We characterize these transitions and the relative stability of the solutions and we show that the two interactions conspire to stabilize the quarter-filled charge-ordered phase.

  1. Metal-insulator transition in 3d transition-metal oxides with ABO 3 and A 2BO 4 type structures

    NASA Astrophysics Data System (ADS)

    Eisaki, H.; Ido, T.; Magoshi, K.; Mochizuki, M.; Yamatsu, H.; Ito, T.; Uchida, S.

    1991-12-01

    3d transition-metal oxides with perovskite and K 2NiF 4 crystal structures, (La,Sr)VO 3, (La,Sr)FeO 3, (La,Sr)CoO 3, LaNiO 3 and (La,Sr) 2NiO 4 systems are investigated focusing on the effect of carrier doping performed by the A-site ion substitution. Both (La,Sr)VO 3 and (La,Sr)CoO 3 systems show an insulator to metal transition by Sr substitution, however, the magnetic behavior differs drastically. The mid-infrared structure induced by Sr substitution is observed in the optical spectra of (La,Sr) 2NiO 4 system. Relation between the behavior of metal-insulator transition and the variation of the electronic and/or spin structure in these systems is discussed in comparison with the high-T c copper oxides.

  2. Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition.

    PubMed

    Briggs, Ryan M; Pryce, Imogen M; Atwater, Harry A

    2010-05-24

    We have integrated lithographically patterned VO2 thin films grown by pulsed laser deposition with silicon-on-insulator photonic waveguides to demonstrate a compact in-line absorption modulator for use in photonic circuits. Using single-mode waveguides at lambda=1550 nm, we show optical modulation of the guided transverse-electric mode of more than 6.5 dB with 2 dB insertion loss over a 2-microm active device length. Loss is determined for devices fabricated on waveguide ring resonators by measuring the resonator spectral response, and a sharp decrease in resonator quality factor is observed above 70 degrees C, consistent with switching of VO2 to its metallic phase. A computational study of device geometry is also presented, and we show that it is possible to more than double the modulation depth with modified device structures.

  3. Mechanisms of spin-flipping and metal-insulator transition in nano-Fe3O4

    NASA Astrophysics Data System (ADS)

    Dito Fauzi, Angga; Aziz Majidi, Muhammad; Rusydi, Andrivo

    2017-04-01

    Fe3O4 is a half-metallic ferrimagnet with {{T}\\text{C}}∼ 860 K exhibiting metal-insulator transition (MIT) at  ∼120 K. In bulk form, the saturation magnetization is 0.6 Tesla (∼471 emu cm‑3). A recent experimental study has shown that the saturation magnetization of nano-Fe3O4 thin films can achieve up to  ∼760 emu cm‑3, attributed to spin-flipping of Fe ions at tetrahedral sites assisted by oxygen vacancies (V O). Such a system has shown to have higher MIT temperature (∼150 K). The spin-flipping is a new phenomenon in Fe3O4, while the MIT is a long-standing one. Here, we propose a model and calculations to investigate the mechanisms of both phenomena. Our results show that, for the system without V O, the ferrimagnetic configuration is energetically favorable. Remakably, upon inclusion of V O, the ground-state configuration switches into ferromagnetic. As for the MIT, by proposing temperature dependences of some hopping integrals in the model, we demonstrate that the system without and with V O undergo the MIT in slightly different ways, leading to higher MIT temperature for the system with V O, in agreement with the experimental data. Our results also show that the MIT in both systems occur concomitantly with the redistribution of electrons among the three Fe ions in each Fe3O4 formula unit. As such temperature dependences of hopping integrals may arise due to dynamic Jahn–Teller effects, our phenomenological theory may provide a way to reconcile existing theories relating the MIT to the structural transition and the charge ordering.

  4. Proton spin-lattice relaxation mechanisms and the metal-insulator transition in cerium hydrides

    NASA Astrophysics Data System (ADS)

    Zamir, D.; Barnes, R. G.; Salibi, N.; Cotts, R. M.; Phua, T.-T.; Torgeson, D. R.; Peterson, D. T.

    1984-01-01

    Nuclear-magnetic-resonance (NMR) experiments have been done on cerium hydride (CeHx) samples to search for correlations between NMR properties and known electrical conductivity changes as a function of hydrogen concentration and temperature. Data are presented for the 1H spin-lattice relaxation rate R1 (=1T1) and some line shapes for 2.10<=x<=2.92 for temperatures from about 100 to 375 K. Although two 1H resonances are observed at some temperatures, proton spin-lattice relaxation is characterized by a single relaxation time at each x and T. To a good approximation R1=AT+R, where AT is attributed to direct dipolar coupling between protons and the electronic magnetic dipole moment of Ce3+, and R is an essentially temperature-independent term attributed to indirect [Ruderman-Kittel-Kasuya-Yosida (RKKY)] coupling to the Ce3+ moment. The AT term is so large that for most experiments the proton-proton dipolar and proton-conduction-electron couplings are negligible. The x dependence of the constant A is consistent with the dipolar coupling. The constant R decreases in a steep manner as x is increased above x~2.65 just below the regime 2.75transition occurs in CeHx. It is proposed that R~Nd(EF) and that the RKKY interaction includes coupling through the d-band density of states. The marked decreases in R1 and in the electrical conductivity that are associated with the concentration-dependent transition are thus attributed to the vanishing electron density of states at the Fermi surface. No temperature-dependent transition in R1 is found. Results are consistent with a Mott transition model in which the electron donors are hydrogen vacancies.

  5. Universal role of quantum uncertainty in Anderson metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Cheng, W. W.; Zhang, Z. J.; Gong, L. Y.; Zhao, S. M.

    2016-07-01

    We explore quantum uncertainty, based on Wigner-Yanase skew information, in various one-dimensional single-electron wave functions. For the power-law function and eigenfunctions in the Aubry-André model, the electronic localization properties are well-defined. For them, we find that quantum uncertainty is relatively small and large for delocalized and localized states, respectively. And around the transition points, the first-order derivative of the quantum uncertainty exhibits singular behavior. All these characters can be used as signatures of the transition from a delocalized phase to a localized one. With this criterion, we also study the quantum uncertainty in one-dimensional disorder system with long-range correlated potential. The results show that the first-order derivative of spectrum-averaged quantum uncertainty is minimal at a certain correlation exponent αm for a finite system, and has perfect finite-size scaling behaviors around αm. By extrapolating αm, the threshold value αc ≃ 1.56 ± 0.02 is obtained for the infinite system. Thus we give another perspective and propose a consistent interpretation for the discrepancies about localization property in the long-range correlated potential model. These results suggest that the quantum uncertainty can provide us with a new physical intuition to the localization transition in these models.

  6. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    NASA Astrophysics Data System (ADS)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  7. Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO2 film near the metal-insulator transition region

    NASA Astrophysics Data System (ADS)

    Li, W. W.; Yu, Q.; Liang, J. R.; Jiang, K.; Hu, Z. G.; Liu, J.; Chen, H. D.; Chu, J. H.

    2011-12-01

    Transmittance spectra of (011) vanadium dioxide (VO2) film have been studied in the temperature range of 45-80 °C. Owing to increasing carrier concentration, the near-infrared extinction coefficient and optical conductivity around metal-insulator transition (MIT) rapidly increase with the temperature. Moreover, three electronic transitions can be uniquely assigned and show the hysteresis behavior near the MIT region. It was found that the optical band gap decreases from 0.457 to 0.042 eV before the MIT, then reduces to zero for the metal state. This confirms the fact that the a1g and egπ bands are moved close and finally overlap with the temperature.

  8. Quantum transport in 3D Weyl semimetals: Is there a metal-insulator transition?

    NASA Astrophysics Data System (ADS)

    Ziegler, Klaus

    2016-12-01

    We calculate the transport properties of three-dimensional Weyl fermions in a disordered environment. The resulting conductivity depends only on the Fermi energy and the scattering rate. First we study the conductivity at the spectral node for a fixed scattering rate and obtain a continuous transition from an insulator at weak disorder to a metal at stronger disorder. Within the self-consistent Born approximation the scattering rate depends on the Fermi energy. Then it is crucial that the limits of the conductivity for a vanishing Fermi energy and a vanishing scattering rate do not commute. As a result, there is also metallic behavior in the phase with vanishing scattering rate and only a quantum critical point remains as an insulating phase. The latter turns out to be a critical fixed point in terms of a renormalization-group flow.

  9. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    PubMed

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-06

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2).

  10. Martensitic accommodation strain and the metal-insulator transition in manganites

    NASA Astrophysics Data System (ADS)

    Podzorov, V.; Kim, B. G.; Kiryukhin, V.; Gershenson, M. E.; Cheong, S.-W.

    2001-10-01

    In this paper, we report polarized optical microscopy and electrical transport studies of manganese oxides that reveal that the charge ordering transition in these compounds exhibits typical signatures of a martensitic transformation. We demonstrate that specific electronic properties of charge-ordered manganites stem from a combination of martensitic accommodation strain and effects of strong electron correlations. This intrinsic strain is strongly affected by the grain boundaries in ceramic samples. Consistently, our studies show a remarkable enhancement of low field magnetoresistance and the grain size effect on the resistivity in polycrystalline samples and suggest that the transport properties of this class of manganites are governed by the charge-disordered insulating phase stabilized at low temperature by virtue of martensitic accommodation strain. High sensitivity of this phase to strains and magnetic field leads to a variety of striking phenomena, such as unusually high magnetoresistance (1010%) in low magnetic fields.

  11. Exotic topological states near a quantum metal-insulator transition in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming

    Pyrochlore iridates have attracted great interest as prime candidates that may host topologically nontrivial states, spin ice ordering and quantum spin liquid states, in particular through the interplay between different degrees of freedom, such as local moments and mobile electrons. Based on our extensive study using our high quality single crystals, we will discuss such examples, i.e. chiral spin liquid in a quadratic band touching state, Weyl semimetallic state and chiral domain wall transport nearby a quantum insulator-semimetal transition in pyrochlore iridates. This work is based on the collaboration with Nakatsuji Satoru, Kohama Yoshimitsu, Tomita Takahiro, Kindo Koichi, Jun J. Ishikawa, Balents Leon, Ishizuka Hiroaki, Timothy H. Hsieh. ZM. Tian was supported by JSPS Postdoctoral Fellowship (No.P1402).

  12. Volume-based considerations for the metal-insulator transition of CMR oxides

    SciTech Connect

    Neumeier, J.J. |; Hundley, M.F.; Cornelius, A.L.; Andres, K.

    1998-03-01

    The sensitivity of {rho} [electrical resistivity] to changes in volume which occur through: (1) applied pressure, (2) variations in temperature, and (3) phase transitions, is evaluated for some selected CMR oxides. It is argued that the changes in volume associated with phase changes are large enough to produce self pressures in the range of 0.18 to 0.45 GPa. The extreme sensitivity of the electrical resistivity to pressure indicates that these self pressures are responsible for large features in the electrical resistivity and are an important component for occurrence the metallicity below {Tc}. It is suggested that this is related to a strong volume dependence of the electron phonon coupling in the CMR oxides.

  13. Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates

    NASA Astrophysics Data System (ADS)

    Yamasaki, A.; Fujiwara, H.; Tachibana, S.; Iwasaki, D.; Higashino, Y.; Yoshimi, C.; Nakagawa, K.; Nakatani, Y.; Yamagami, K.; Aratani, H.; Kirilmaz, O.; Sing, M.; Claessen, R.; Watanabe, H.; Shirakawa, T.; Yunoki, S.; Naitoh, A.; Takase, K.; Matsuno, J.; Takagi, H.; Sekiyama, A.; Saitoh, Y.

    2016-09-01

    In this study, we systematically investigate three-dimensional (3D) momentum (ℏ k )-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Srn +1IrnO3 n +1 using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO2-plane structure. This transition occurs when the spin-orbit-coupled jeff=1 /2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the Γ (0,0,0)-R (π ,π ,π ) direction is found to play a crucial role in the metallic characteristics of SrIrO3. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO3 and kz-dependent oscillations of photoelectron intensity in Sr3Ir2O7 . In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the k -resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed k -space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a nonrealistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.

  14. Metal-insulator transition in variably doped (Bi(1-x)Sb(x))2Se3 nanosheets.

    PubMed

    Lee, Chee Huei; He, Rui; Wang, ZhenHua; Qiu, Richard L J; Kumar, Ajay; Delaney, Conor; Beck, Ben; Kidd, T E; Chancey, C C; Sankaran, R Mohan; Gao, Xuan P A

    2013-05-21

    Topological insulators are novel quantum materials with metallic surface transport but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of a topological insulator Bi2Se3 with variable Sb-doping levels to control the electron carrier density and surface transport behavior. (Bi(1-x)Sb(x))2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ∼4 × 10(13) cm(-2) in pure Bi2Se3 (x = 0) to ∼2 × 10(12) cm(-2) in (Bi(1-x)Sb(x))2Se3 at x ∼ 0.15, while maintaining the metallic transport behavior. At x ≳ ∼0.20, a metal-insulator transition (MIT) is observed, indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of the Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.

  15. Localization, mobility edges, and metal-insulator transition in a class of one-dimensional slowly varying deterministic potentials

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; He, Song; Xie, X. C.

    1990-03-01

    We study the localization properties of the one-dimensional nearest-neighbor tight-binding Schrödinger equation, un+1+un-1+Vnun=Eun, where the on-site potential Vn is neither periodic (the ``Bloch'' case) nor random (the ``Anderson'' case), but is aperiodic or pseudorandom. In particular, we consider in detail a class of slowly varying potential with a typical example being Vn=λ cos(παnν) with 0<ν<1. We develop an asymptotic semiclassical technique to calculate exactly (in the large-n limit) the density of states and the Lyapunov exponent for this model. We also carry out numerical work involving direct diagonalization and recursive transfer-matrix calculations to study localization properties of the model. Our theoretical results are essentially in exact agreement with the numerical results. Our most important finding is that, for λ<2, there is a metal-insulator transition in this one-dimensional model (ν<1) with the mobility edges located at energies Ec=+/-||2-λ||. Eigenstates at the band center (||E||<||Ec||) are all extended whereas the band-edge states (||E||>||Ec||) are all localized. Another interesting finding is that, in contrast to higher-dimensional random-disorder situations, the density of states, D(E), in this model is not necessarily smooth through the mobility edge, but may diverge according to D(E)~||E-Ec||-δ. The Lyapunov exponent γ (or, the inverse localization length) behaves at Ec as γ(E)~||E-Ec||β, with β=1-δ. We solve the exact critical behavior of the general model, deriving analytic expressions for D(E), γ(E), and the exponents δ and β. We find that λ, α, and ν are all irrelevant variables in the renormalization-group sense for the localization critical properties of the model. We also give detailed numerical results for a number of different forms of Vn.

  16. Ultracold fermions in a one-dimensional bipartite optical lattice: Metal-insulator transitions driven by shaking

    NASA Astrophysics Data System (ADS)

    Di Liberto, M.; Malpetti, D.; Japaridze, G. I.; Morais Smith, C.

    2014-08-01

    We theoretically investigate the behavior of a system of fermionic atoms loaded in a bipartite one-dimensional optical lattice that is under the action of an external time-periodic driving force. By using Floquet theory, an effective model is derived. The bare hopping coefficients are renormalized by zeroth-order Bessel functions of the first kind with different arguments for the nearest-neighbor and next-nearest-neighbor hopping. The insulating behavior characterizing the system at half filling in the absence of driving is dynamically suppressed, and for particular values of the driving parameter the system becomes either a standard metal or an unconventional metal with four Fermi points. The existence of the four-Fermi-point metal relies on the fact that, as a consequence of the shaking procedure, the next-nearest-neighbor hopping coefficients become significant compared to the nearest-neighbor ones. We use the bosonization technique to investigate the effect of on-site Hubbard interactions on the four-Fermi-point metal-insulator phase transition. Attractive interactions are expected to enlarge the regime of parameters where the unconventional metallic phase arises, whereas repulsive interactions reduce it. This metallic phase is known to be a Luther-Emery liquid (spin-gapped metal) for both repulsive and attractive interactions, contrary to the usual Hubbard model, which exhibits a Mott-insulator phase for repulsive interactions. Ultracold fermions in driven one-dimensional bipartite optical lattices provide an interesting platform for the realization of this long-studied four-Fermi-point unconventional metal.

  17. Giant positive magnetoresistance and field-induced metal insulator transition in Cr2NiGa

    NASA Astrophysics Data System (ADS)

    Pramanick, S.; Dutta, P.; Chatterjee, S.; Giri, S.; Majumdar, S.

    2017-01-01

    We report the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to the Pm\\bar{3} m space group. The sample is found to be paramagnetic down to 2 K with metallic characteristics. On application of a magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows a negative temperature coefficient of resistivity below about 50 K under the application of field  ⩾80 kOe, signifying a field-induced metal to ‘insulating’ transition. The observed magnetoresistance follows Kohler’s rule below 20 K indicating the validity of the semiclassical model of electronic transport in metals with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.

  18. The Unusual Metal-Insulator Transition in Ca(2-x)Sr(x)RuO(4)

    NASA Astrophysics Data System (ADS)

    Rice, T. Maurice

    2002-03-01

    The isoelectronic compounds Ca_2-xSr_xRuO4 offer a rare opportunity to follow the evolution of the electronic structure from a multiband metal, Sr_2RuO_4, to a Mott insulator, Ca_2RuO_4. The evolution is not at all monotonic but proceeds through a series of intermediate regions with unexpected behavior [1]. Sr_2RuO4 is a good metal with the 4 electrons in the t_2g-subshell of the Ru^4+-ions distributed equally in 3 bands. These in turn separate into a d_xy-band which disperses in both directions in the RuO_2-planes and d_xz/d_yz-bands dispersing only in one direction. The hybridization between these components occurs only through very weak interplanar processes. Substituting Ca for Sr leads to band narrowing through a rotation of the RuO_4-octahedra. A series of electronic structure calculations [2] using the LDA+DMFT method to incorporate strong correlations, predict an unusual state with 3 electrons localizing in the narrower d_xz/d_yz bands while the last electron remains itinerant in the broader d_xy-band. The observation of a strongly enhanced and temperature dependent spin susceptibility in the metallic state at x=0.5 is attributed to the S=1/2 local moments of the localized hole in the d_xz/d_yz-orbitals. The superexchange interaction between the local moments is strongly dependent on the specific orbital occupation and so glassy behavior in the orbital ordering can account for the glassy behavior observed in the susceptibility in the range 0.2 < x < 0.5. The final transition to a Mott insulator at x < 0.2 is driven by a compression of the RuO_4-octahedra and a switch to an electronic configuration with a filled d_xy-orbital and 2 electrons in the d_xz/d_yz orbitals which has a S=1 local moment expected for a Ru^4+-ion. [1] S. Nakatsuji and Y. Maeno, Phys. Rev. Lett. 84, 2666 (2000). [2] V.I. Anisimov, I.A. Nekrasov, D.E. Kondakov, T.M. Rice, and M. Sigrist, cond-mat0107095 and Eur. Phys. Jour. B (in press).

  19. Metal-Insulator Transitions.

    ERIC Educational Resources Information Center

    Mott, Nevill

    1978-01-01

    Explains how changes in temperature, pressure, magnetic field or alloy composition can affect the electronic band structure of substances, leading in some cases to dramatic changes in conductivity. (GA)

  20. Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

    2016-03-01

    This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

  1. Transition to turbulence: 2D directed percolation

    NASA Astrophysics Data System (ADS)

    Chantry, Matthew; Tuckerman, Laurette; Barkley, Dwight

    2016-11-01

    The transition to turbulence in simple shear flows has been studied for well over a century, yet in the last few years has seen major leaps forward. In pipe flow, this transition shows the hallmarks of (1 + 1) D directed percolation, a universality class of continuous phase transitions. In spanwisely confined Taylor-Couette flow the same class is found, suggesting the phenomenon is generic to shear flows. However in plane Couette flow the largest simulations and experiments to-date find evidence for a discrete transition. Here we study a planar shear flow, called Waleffe flow, devoid of walls yet showing the fundamentals of planar transition to turbulence. Working with a quasi-2D yet Navier-Stokes derived model of this flow we are able to attack the (2 + 1) D transition problem. Going beyond the system sizes previously possible we find all of the required scalings of directed percolation and thus establish planar shears flow in this class.

  2. Ground-state oxygen holes and the metal-insulator transition in the negative charge-transfer rare-earth nickelates

    NASA Astrophysics Data System (ADS)

    Bisogni, Valentina; Catalano, Sara; Green, Robert J.; Gibert, Marta; Scherwitzl, Raoul; Huang, Yaobo; Strocov, Vladimir N.; Zubko, Pavlo; Balandeh, Shadi; Triscone, Jean-Marc; Sawatzky, George; Schmitt, Thorsten

    2016-10-01

    The metal-insulator transition and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here we combine X-ray absorption and resonant inelastic X-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of rare-earth nickelates, taking NdNiO3 thin film as representative example. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for abundant oxygen holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy in line with recent models interpreting the metal-insulator transition in terms of bond disproportionation.

  3. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-08-04

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  4. Metal-insulator transition in the hollandite K2V8O16 with a frustrated zigzag ladder probed by V51 NMR

    NASA Astrophysics Data System (ADS)

    Shimizu, Yasuhiro; Okai, Katsunori; Itoh, Masayuki; Isobe, Masahiro; Yamaura, Jun-Ichi; Yamauchi, Touru; Ueda, Yutaka

    2011-04-01

    We report the experimental results of V51 NMR measurements on the hollandite K2V8O16 consisting of a frustrated zigzag ladder with the orbital degrees of freedom. The metal-insulator transition is found to involve the spin-singlet formation by the V51 Knight shift K, the nuclear spin-lattice relaxation rate 1/T1, and the spin-echo decay rate 1/T2 measurements. In the insulating state, the anisotropic electric-field gradient supports the dxy orbital order with the spin singlet along the chain. The dxy orbital is magnetically most active in the metallic state, as observed by the anisotropic Knight shift, which suggests the strong electron correlation in the dxy band. Despite the large enhancement of the spin susceptibility, no apparent spin correlation is developed in the frustrated metallic state. Pressure suppresses the electron correlation continuously, as highlighted in the decrease of the metal-insulator transition and the spin susceptibility keeping the largest dxy contribution in the metallic state. A robust spin-singlet insulating phase with the large spin gap and paramagnetic spins appears above 1 GPa, which suggests a competition of the charge-orbital ordering pattern.

  5. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  6. Ground-state oxygen holes and the metal-insulator transition in the negative charge-transfer rare-earth nickelates.

    PubMed

    Bisogni, Valentina; Catalano, Sara; Green, Robert J; Gibert, Marta; Scherwitzl, Raoul; Huang, Yaobo; Strocov, Vladimir N; Zubko, Pavlo; Balandeh, Shadi; Triscone, Jean-Marc; Sawatzky, George; Schmitt, Thorsten

    2016-10-11

    The metal-insulator transition and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here we combine X-ray absorption and resonant inelastic X-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of rare-earth nickelates, taking NdNiO3 thin film as representative example. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for abundant oxygen holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that distinct spectral signatures arise from a Ni 3d(8) configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy in line with recent models interpreting the metal-insulator transition in terms of bond disproportionation.

  7. Changes in the electronic structure and spin dynamics across the metal-insulator transition in LaLa1-xSrxCoO3

    DOE PAGES

    Smith, R. X.; Hoch, M. J. R.; Moulton, W. G.; ...

    2016-01-25

    The magnetoelectronic properties of La1-xSrxCoO3, which include giant magnetoresistance, are strongly dependent on the level of hole doping. The system evolves, with increasing x, from a spin glass insulator to a metallic ferromagnet with a metal-insulator (MI) transition at xC ~ 0.18. Nanoscale phase separation occurs in the insulating phase and persists, to some extent, into the just-metallic phase. The present experiments at 4.2 K have used 139La NMR to investigate the transition from hopping dynamics for x < xC to Korringa-like ferromagnetic metal behavior for x > xC. A marked decrease in the spin-lattice relaxation rate is found inmore » the vicinity of xC as the MI transition is crossed. Lastly, this behavior is accounted for in terms of the evolution of the electronic structure and dynamics with cluster size.« less

  8. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions.

    PubMed

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-14

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases.

  9. Gold clusters on Nb-doped SrTiO3: effects of metal-insulator transition on heterogeneous Au nanocatalysis.

    PubMed

    Zhou, Miao; Feng, Yuan Ping; Zhang, Chun

    2012-07-21

    Doping induced metal-insulator transition (MIT) in transition-metal (TM) oxides has been the topic of continued interest outside the field of catalysis chemistry. In this paper, via ab initio (GGA+U) calculations, we show that Nb-doping induced MIT in SrTiO(3) causes a dimensionality crossover of supported Au clusters, and at the same time, greatly enhances the stability and catalytic activity of these clusters. Underlying the predicted high catalytic activity of Au clusters towards the CO oxidation is the MIT induced interaction between the O(2) antibonding 2π* orbital and Au conduction bands, leading to a shift in the population of electrons from Au to the antibonding orbital and the activation of the O(2) molecule. We expect these results to provide a new methodology for the control of catalytic performance of TM-oxide supported Au nanoclusters.

  10. Effects of low-energy excitations on spectral properties at higher binding energy: the metal-insulator transition of VO(2).

    PubMed

    Gatti, Matteo; Panaccione, Giancarlo; Reining, Lucia

    2015-03-20

    The effects of electron interaction on spectral properties can be understood in terms of coupling between excitations. In transition-metal oxides, the spectral function close to the Fermi level and low-energy excitations between d states have attracted particular attention. In this work we focus on photoemission spectra of vanadium dioxide over a wide (10 eV) range of binding energies. We show that there are clear signatures of the metal-insulator transition over the whole range due to a cross coupling of the delocalized s and p states with low-energy excitations between the localized d states. This coupling can be understood by advanced calculations based on many-body perturbation theory in the GW approximation. We also advocate the fact that tuning the photon energy up to the hard-x-ray range can help to distinguish fingerprints of correlation from pure band-structure effects.

  11. Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition

    SciTech Connect

    Okimura, Kunio; Mian, Md.Suruz

    2012-09-15

    The authors achieved oriented growth of vanadium dioxide (VO{sub 2}) films on CoCrTa metal template grown on an Si substrate. Low-temperature ({approx}250 Degree-Sign C) deposition of VO{sub 2} films using inductively coupled-plasma-assisted sputtering technique realized an abrupt interface between VO{sub 2} and CoCrTa layers, suppressing the oxidation and diffusion of metal components. The films revealed a metal-insulator transition with resistance change of over 2 orders of magnitude. The CoCrTa film, in which Co hexagonal crystalline grains with c-axis orientation were surrounded by segregated Cr and Ta, serves for the oriented growth of VO{sub 2} crystalline film, enabling higher orders of transition in resistance and low voltage switching, even for the vertical (out-of-plane) direction.

  12. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  13. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    SciTech Connect

    Wangoh, L.; Quackenbush, N. F.; Marley, P. M.; Banerjee, S.; Sallis, S.; Fischer, D. A.; Woicik, J. C.; Piper, L. F. J.

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  14. Universality classes of metal-insulator transitions in strongly correlated electron systems and mechanism of high-temperature superconductivity

    NASA Astrophysics Data System (ADS)

    Imada, Masatoshi

    2005-08-01

    We study three regimes of the Mott transitions characterized by classical, marginally quantum, and quantum. In the classical regime, the quantum degeneracy temperature is lower than the critical temperature of the Mott transition Tc , below which the first-order transition occurs. The quantum regime describes the Tc=0 boundary of the continuous transition. The marginal quantum region appears sandwiched by these two regimes. The classical transition is described by the Ising universality class. However, the Ginzburg-Landau-Wilson scheme breaks down when the quantum effects dominate. The marginal quantum critical region is categorized to an unusual universality class, where the order parameter exponent β , the susceptibility exponent γ , and the field exponent δ are given by β=d/2 , γ=2-d/2 , and δ=4/d , respectively, with d being the spatial dimensionality. It is shown that the transition is always at the upper critical dimension irrespective of the spatial dimensions. Therefore the mean-field exponents and the hyperscaling description become both valid at any dimension. The obtained universality classes agree with the recent experimental results on the Mott criticality in organic conductors such as κ-(ET)2Cu[N(CN)2]Cl and transition-metal compounds such as V2O3 . The marginal quantum criticality is characterized by the critically enhanced electron-density fluctuations at small wave number. The characteristic energy scale of the density fluctuation extends to the order of the Mott gap in contrast to the spin and orbital fluctuation scales and causes various unusual properties. The mode coupling theory shows that the marginal quantum criticality further generates non-Fermi-liquid properties in the metallic side. The effects of the long-range Coulomb force in the filling-control Mott transition are also discussed. A mechanism of high-temperature superconductivity emerges from the density fluctuations at small wave number inherent in the marginal quantum

  15. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO{sub 3} thin films grown by polymer-assisted deposition

    SciTech Connect

    Yao, Dan; Shi, Lei Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-21

    The epitaxial NdNi{sub 1-x}Co{sub x}O{sub 3} (0 ≤ x ≤ 0.10) thin films on (001) LaAlO{sub 3} and (001) SrTiO{sub 3} substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO{sub 3} thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (T{sub MI}) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  16. Unusual valence state and metal-insulator transition in BaV10O15 probed by hard x-ray photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Yoshino, T.; Okawa, M.; Kajita, T.; Dash, S.; Shimoyama, R.; Takahashi, K.; Takahashi, Y.; Takayanagi, R.; Saitoh, T.; Ootsuki, D.; Yoshida, T.; Ikenaga, E.; Saini, N. L.; Katsufuji, T.; Mizokawa, T.

    2017-02-01

    We have studied the electronic structure of BaV10O15 across the metal-insulator transition with V trimerization by means of hard-x-ray photoemission spectroscopy (HAXPES) and mean-field calculations. The V 2 p HAXPES indicates V2.5 +-V3 + charge fluctuation in the metallic phase, and V2+-V3+ charge order in the insulating phase. The V2.5 +-V3 + charge fluctuation is consistent with the mean-field solution where a V 3 d a1 g electron is shared by two V sites with face-sharing VO6 octahedra. The valence-band HAXPES of the metallic phase exhibits pseudogap opening at the Fermi level associated with the charge fluctuation, and a band gap ˜200 meV is established in the insulating phase due to the switching of charge correlation.

  17. Cu(Ir1 − xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    PubMed Central

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-01-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 − xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states. PMID:24518384

  18. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

    SciTech Connect

    Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

    2014-02-24

    Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.

  19. Metal-insulator transition characteristics of vanadium dioxide thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture

    NASA Astrophysics Data System (ADS)

    Bharathi, R.; Naorem, Rameshwari; Umarji, A. M.

    2015-08-01

    We report the synthesis of high quality vanadium dioxide (VO2) thin films by a novel spray pyrolysis technique, namely ultrasonic nebulized spray pyrolysis of aqueous combustion mixture (UNSPACM). This simple and cost effective two step process involves synthesis of a V2O5 film on an LaAlO3 substrate followed by a controlled reduction to form single phase VO2. The formation of M1 phase (P21/c) is confirmed by Raman spectroscopic studies. A thermally activated metal-insulator transition (MIT) was observed at 61 ^\\circ C, where the resistivity changes by four orders of magnitude. Activation energies for the low conduction phase and the high conduction phase were obtained from temperature variable resistance measurements. The infrared spectra also show a dramatic change in reflectance from 13% to over 90% in the wavelength range of 7-15 μ m. This indicates the suitability of the films for optical switching applications at infrared frequencies.

  20. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    PubMed Central

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  1. Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

    SciTech Connect

    L Whittaker; T Wu; C Patridge; S Ganapathy; S Banerjee

    2011-12-31

    The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation of substitutional tungsten dopants but the impact on the former transition seems far more prominent. In general, the depression in the critical temperatures upon tungsten doping far exceeds corresponding values for bulk W{sub x}V{sub 1-x}O{sub 2} of the same composition. Notably, the depression in phase transition temperature saturates at a relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants in these structures. The marked deviations from bulk behavior are rationalized in terms of a percolative model of the phase transition taking into account the nucleation of locally tetragonal domains and enhanced carrier delocalization that accompany W{sup 6+} doping in the W{sub x}V{sub 1-x}O{sub 2} nanobelts.

  2. Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K

    NASA Astrophysics Data System (ADS)

    Yang, Zheng; Hart, Sean; Ko, Changhyun; Yacoby, Amir; Ramanathan, Shriram

    2011-08-01

    We investigate the electrically triggered metal-insulator transition (E-MIT) in VO2 thin films at temperatures far below the structural phase transition temperature (˜340 K). At 77 K, the maximum current jump observed across the E-MIT is nearly 300×. The threshold voltage for E-MIT decreases slightly from ˜2.0 V at 77 K to ˜1.1 V at 300 K across ˜200 nm thick films, which scales weakly over the temperature range of 77-300 K with an activation energy of ˜5 meV. The phase transition properties are found to be stable after over one thousand scans, indicating reproducible measurements. Analysis of the scaling behavior suggests that the observed weak temperature-dependence of the threshold voltages for E-MIT is smaller than that predicted for a purely current induced Joule heating effect and may include contribution from field effect or carrier injection under applied bias. The results are of potential relevance to the field of phase transition oxide electronics and further understanding of the transition mechanisms.

  3. Tunable metal-insulator transition in Nd1-xYxNiO3 (x = 0.3, 0.4) perovskites thin film at near room temperature

    NASA Astrophysics Data System (ADS)

    Shao, Tao; Qi, Zeming; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Wang, Yu; Zhang, Guobin; Liu, Miao

    2015-07-01

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd1-XYXNiO3 (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340-360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  4. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    SciTech Connect

    Park, Tae-Eon; Jang, Chaun E-mail: presto@kist.re.kr; Suh, Joonki; Wu, Junqiao; Seo, Dongjea; Park, Joonsuk; Lin, Der-Yuh; Huang, Ying-Sheng; Choi, Heon-Jin; Chang, Joonyeon E-mail: presto@kist.re.kr

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  5. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  6. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-26

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  7. Pressure dependence of the metal-insulator transition in κ-(BEDT-TTF)2Hg(SCN)2Cl: optical and transport studies.

    PubMed

    Löhle, A; Rose, E; Singh, S; Beyer, R; Tafra, E; Ivek, T; Zhilyaeva, E I; Lyubovskaya, R N; Dressel, M

    2017-02-08

    The two-dimensional organic conductor κ-(BEDT-TTF)2-Hg(SCN)2Cl exhibits a pronounced metal-insulator transition at [Formula: see text] K. From the splitting of the molecular vibrations, the phase transition can be unambiguously assigned to charge-ordering with [Formula: see text]. We have investigated the pressure evolution of this behavior by temperature-dependent electrical transport measurements and optical investigations applying hydrostatic pressure up to 12 kbar. The data reveal a mean-field like down-shift of [Formula: see text] with a critical pressure of [Formula: see text] kbar and a metallic state above the suppression of the charge-ordered state; no traces of superconductivity could be identified down to T  =  1.5 K. As the charge order [Formula: see text] sets in abruptly with decreasing temperature, its size remains unaffected by pressure. However, the fraction of charge imbalanced molecules decreases until it is completely absent above 1.6 kbar.

  8. Charge disproportionation without charge transfer in the rare-earth nickelates as a possible mechanism for the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Johnston, Steven; Mukherjee, Anamitra; Elfimov, Ilya; Berciu, Mona; Sawatzky, George

    2014-03-01

    We study a model for the metal-insulator (MI) transition in the rare-earth nickelates RNiO3, based upon a negative charge transfer energy and coupling to a rock-salt like lattice distortion of the NiO6 octahedra. Using exact diagonalization and the Hartree-Fock approximation we demonstrate that electrons couple strongly to these distortions. For small distortions the system is metallic, with ground state of predominantly d8 ligand character, where ligand denotes a ligand hole. For sufficiently large distortions (δdNi - O ~ 0 . 05 - 0 . 10 Å), however, a gap opens at the Fermi energy as the system enters a periodically distorted state alternating along the three crystallographic axes, with (d8 ligand2) S = 0(d8) S = 1 character, where S is the total spin. Thus the MI transition may be viewed as being driven by an internal volume ``collapse'' where the NiO6 octahedra with two ligand holes shrink around their central Ni, while the remaining octahedra expand accordingly, resulting in the superstructure observed in x-ray diffraction in the insulating phase. This insulating state is an example of charge ordering achieved without any actual movement of the charge, similar to that reported in a prior DMFT study.

  9. Charge Disproportionation without Charge Transfer in the Rare-Earth-Element Nickelates as a Possible Mechanism for the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Johnston, Steve; Mukherjee, Anamitra; Elfimov, Ilya; Berciu, Mona; Sawatzky, George A.

    2014-03-01

    We study a model for the metal-insulator (M-I) transition in the rare-earth-element nickelates RNiO3, based upon a negative charge transfer energy and coupling to a rocksaltlike lattice distortion of the NiO6 octahedra. Using exact diagonalization and the Hartree-Fock approximation we demonstrate that electrons couple strongly to these distortions. For small distortions the system is metallic, with a ground state of predominantly d8L character, where L_ denotes a ligand hole. For sufficiently large distortions (δdNi-O˜0.05-0.10 Å), however, a gap opens at the Fermi energy as the system enters a periodically distorted state alternating along the three crystallographic axes, with (d8L_2)S =0(d8)S=1 character, where S is the total spin. Thus the M-I transition may be viewed as being driven by an internal volume "collapse" where the NiO6 octahedra with two ligand holes shrink around their central Ni, while the remaining octahedra expand accordingly, resulting in the (1/2, 1/2, 1/2) superstructure observed in x-ray diffraction in the insulating phase. This insulating state is an example of charge ordering achieved without any actual movement of the charge.

  10. Localization-driven metal-insulator transition in epitaxial hole-doped Nd1-x Sr x NiO3 ultrathin films

    NASA Astrophysics Data System (ADS)

    Wang, Le; Chang, Lei; Yin, Xinmao; Rusydi, Andrivo; You, Lu; Zhou, Yang; Fang, Liang; Wang, Junling

    2017-01-01

    Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristics of high-quality ultrathin Nd0.9Sr0.1NiO3 (Sr-NNO) films, which were grown on LaAlO3 (0 0 1) single-crystal substrates by using pulsed laser deposition method. Thick Sr-NNO films (25 unit cells) exhibit metallic behavior with the electrical resistivity following the T  n (n  <  2) law corresponding to a non-Fermi liquid system, while a temperature driven metal-insulator transition (MIT) is observed with films of less than 15 unit cells. The transition temperature increases with reducing film thickness, until the insulating characteristic is observed even at room temperature. The emergence of the insulator ground state can be attributed to weak localization driven MIT expected by considering Mott-Ioffe-Regel limit. Furthermore, the magneto-transport study of Sr-NNO ultrathin films also confirms that the observed MIT is due to the disorder-induced localization rather than the electron-electron interactions.

  11. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  12. Interfacial reaction between metal-insulator transition material NbO2 thin film and wide band gap semiconductor GaN

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Kvit, Alexander; Demkov, Alexander

    Materials that undergo a metal-insulator transition (MIT) are potentially useful for a wide variety of applications including electronic and opto-electronic switches, memristors, sensors, and coatings. In most such materials, the MIT is driven by temperature. In one such material, NbO2, the MIT mechanism is primarily of the Peierls-type, in which the dimerization of the Nb atoms without electron correlation causes the transition from metallic to semiconducting. We describe our initial work at combining NbO2 and GaN in epitaxial form, which could be potentially useful in resistive switching devices operating at very high temperatures. We grow NbO2 films on GaN(0001)/Si(111) substrates using reactive molecular beam epitaxy from a metal evaporation source and molecular oxygen. X-ray diffraction shows that the films are found to grow with a single out of plane orientation but with three symmetry-related orientation domains in the plane. In situ x-ray photoelectron spectroscopy confirms that the phase pure NbO2 is formed but that a chemical reaction occurs between the GaN and NbO2 during the growth forming a polycrystalline interfacial layer. We perform STEM-EELS analysis of the film and the interface to further elucidate their chemical and structural properties.

  13. Pressure dependence of the metal-insulator transition in κ-(BEDT-TTF)2Hg(SCN)2Cl: optical and transport studies

    NASA Astrophysics Data System (ADS)

    Löhle, A.; Rose, E.; Singh, S.; Beyer, R.; Tafra, E.; Ivek, T.; Zhilyaeva, E. I.; Lyubovskaya, R. N.; Dressel, M.

    2017-02-01

    The two-dimensional organic conductor κ-(BEDT-TTF)2-Hg(SCN)2Cl exhibits a pronounced metal-insulator transition at {{T}\\text{CO}}=30 K. From the splitting of the molecular vibrations, the phase transition can be unambiguously assigned to charge-ordering with 2{δρ}=0.2e . We have investigated the pressure evolution of this behavior by temperature-dependent electrical transport measurements and optical investigations applying hydrostatic pressure up to 12 kbar. The data reveal a mean-field like down-shift of {{T}\\text{CO}}≤ft( p\\right) with a critical pressure of {{p}c}=0.7+/- 0.1 kbar and a metallic state above the suppression of the charge-ordered state; no traces of superconductivity could be identified down to T  =  1.5 K. As the charge order {δρ} sets in abruptly with decreasing temperature, its size remains unaffected by pressure. However, the fraction of charge imbalanced molecules decreases until it is completely absent above 1.6 kbar.

  14. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  15. Synthetic beta-K(0.33)V2O5 nanorods: a metal-insulator transition in vanadium oxide bronze.

    PubMed

    Zhang, Xiaodong; Yan, Wensheng; Xie, Yi

    2011-12-02

    We found a linear relationship between the metal-insulator transition (MIT) temperature and the A(+) ionic radius of the beta-A(0.33)V(2)O(5) bronze family, leading our attention to beta-K(0.33)V(2)O(5) which has been neglected for a long time. We have introduced a facile hydrothermal method to obtain the single-crystalline beta-K(0.33)V(2)O(5) nanorods. As expected, both the temperature-dependence of the resistivity and magnetization demonstrated MITs at about 72 K for beta-K(0.33)V(2)O(5), thus matching well with the linear relationship described above. The beta-K(0.33)V(2)O(5) was assigned as a new member of the beta-A(0.33)V(2)O(5) bronze family for their similar crystal and electronic structures and their MIT property; this addition enriches the beta-A(0.33)V(2)O(5) bronze family.

  16. Metal-Insulator Transition and the Temperature of the Pseudogap Anomaly Opening in Praseodymium Doped Y1-zPrzBa2Cu3O7-δ Single Crystals

    NASA Astrophysics Data System (ADS)

    Vovk, R. V.; Nazyrov, Z. F.; Goulatis, I. L.; Chroneos, A.; Pinto Simoes, V. M.

    2013-02-01

    The influence of praseodymium doping on the electrical resistivity in the ab-plane of Y1-zPrzBa2Cu3O7-δ single crystals, is investigated. It is determined that as the concentration of praseodymium (0.0 ≤ z ≤ 0.5) is rising there occurs a significant shift of the temperature regions, corresponding to the metal-insulator transitions, as well as to the regime of the implementation of the pseudogap anomaly. The part of the curves related to the metal-insulator transition are well described by means of an asymptotic dependence that corresponds to the implementation of a quantum critical regime in the system, the so-called law of the "one third".

  17. Metal-insulator transition in Ba3Fe1 -xRu2 +xO9 : Interplay between site disorder, chemical percolation, and electronic structure

    NASA Astrophysics Data System (ADS)

    Middey, S.; Aich, Payel; Meneghini, C.; Mukherjee, K.; Sampathkumaran, E. V.; Siruguri, V.; Mahadevan, P.; Ray, Sugata

    2016-11-01

    Perovskites containing barium metal at the A site often take up unusual hexagonal structures having more than one type of possible sites for the B cation to occupy. This opens up various different B -B - or B -O-B -type connectivities and consequent physical properties which are naturally missing in cubic perovskites. BaRuO3 is one such system where doping of Ru (4 d4 ) by other transition metals (Mn +) creates similar conditions, giving rise to various M -Ru interactions. Interestingly, the 6 H hexagonal structure of doped barium ruthenate triple perovskite (Ba3M Ru2O9 ) seems to possess some internal checks because within the structure M ion always occupies the 2 a site and Ru goes to the 4 f site, allowing only M -O-Ru 180∘ and Ru-O-Ru 90∘ interactions to occur. The only exception is observed in the case of the Fe dopant, which allows us to study almost the full Ba3Fe1 -xRu2 +xO9 series of compounds with wide ranges of x because here Fe ions have the ability to freely go to the 4 f sites and Ru readily takes up the 2 a positions. Therefore, here one has the opportunity to probe the evolution of electronic and magnetic properties as a function of doping by going from BaRuO3 (paramagnetic metal) to BaFeO3 (ferromagnetic insulator). Our detailed experimental and theoretical results show that the series does exhibit a percolative metal-insulator transition with an accompanying but not coincidental magnetic transition as a function of x .

  18. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  19. Tuning the metal-insulator transition in d1 and d2 perovskites by epitaxial strain: A first-principles-based study

    NASA Astrophysics Data System (ADS)

    Sclauzero, Gabriele; Dymkowski, Krzysztof; Ederer, Claude

    2016-12-01

    We investigate the effect of epitaxial strain on the Mott metal-insulator transition (MIT) in perovskite systems with d1 and d2 electron configurations of the transition metal (TM) cation. We first discuss the general trends expected from the changes in the crystal-field splitting and in the hopping parameters that are induced by epitaxial strain. We argue that the strain-induced crystal-field splitting generally favors the Mott-insulating state, whereas the strain-induced changes in the hopping parameters favor the metallic state under compressive strain and the insulating state under tensile strain. Thus the two effects can effectively cancel each other under compressive strain, while they usually cooperate under tensile strain, in this case favoring the insulating state. We then validate these general considerations by performing electronic structure calculations for several d1 and d2 perovskites, using a combination of density functional theory (DFT) and dynamical mean-field theory (DMFT). We isolate the individual effects of strain-induced changes in either hopping or crystal-field by performing DMFT calculations where we fix one type of parameter to the corresponding unstrained DFT values. These calculations confirm our general considerations for SrVO3 (d1) and LaVO3 (d2), whereas the case of LaTiO3 (d1) is distinctly different, due to the strong effect of the octahedral tilt distortion in the underlying perovskite crystal structure. Our results demonstrate the possibility to tune the electronic properties of correlated TM oxides by using epitaxial strain, which allows to control the strength of electronic correlations and the vicinity to the Mott MIT.

  20. LETTER TO THE EDITOR: The Mott metal - insulator transition in the two-dimensional Hubbard model at half-filling with lifetime effects within the moment approach

    NASA Astrophysics Data System (ADS)

    Rodríguez-Núñez, J. J.; Schafroth, S.

    1998-06-01

    We explore the effect of the self-energy, 0953-8984/10/23/002/img5, having a single pole, 0953-8984/10/23/002/img6, with spectral weight 0953-8984/10/23/002/img7 and quasi-particle lifetime 0953-8984/10/23/002/img8, on the density of states. We obtain the set of parameters 0953-8984/10/23/002/img6, 0953-8984/10/23/002/img7, and 0953-8984/10/23/002/img8 by means of the moment approach (exact sum rules) of Nolting. Due to our choice of self-energy, the system is not a Fermi liquid for any value of the interaction, a result which also holds in the moment approach of Nolting without lifetime effects. Our self-energy satisfies the Kramers - Kronig relationships since it is analytic in one of the complex half-planes. By increasing the value of the local interaction, 0953-8984/10/23/002/img12, at half-filling 0953-8984/10/23/002/img13, there is a transition from a paramagnetic metal to a paramagnetic insulator (a Mott metal - insulator transition) for values of 0953-8984/10/23/002/img12 of the order of 0953-8984/10/23/002/img15 (W is the bandwidth) which is in agreement with numerical results for finite lattices and for an infinite number of dimensions 0953-8984/10/23/002/img16. These results expose the main weakness of the spherical approximation of Nolting: a finite gap for any finite value of the interaction, i.e., an insulator for any finite value of 0953-8984/10/23/002/img12. Lifetime effects are absolutely indispensable to making our scheme work better than that based on improving the narrowing band factor, 0953-8984/10/23/002/img18, beyond that obtained from the spherical approximation of Nolting.

  1. Metal-insulator transition in CuIr2S4: XAS results, structure revisited, electronic structure proposed

    NASA Astrophysics Data System (ADS)

    Croft, Mark

    2006-03-01

    Interestingly, the magnetism in the spinel compound Fe3O4 (loadstone), constitutes the correlated electron material/problem of the greatest antiquity known to man. The Verwy transition problem in Fe3O4 is, by comparison, young at only 67 years of age. Recently experimental and theoretical insights into such exotic magnetic, charge, and orbital orderings in transition metal (T) spinel compounds have been rapidly emerging. The leitmotifs in these works involve: frustrated tripartite crossing 1D chains of edge-sharing T-ligand octahedra; T-d(t2g) orbital ordering onto subsets of these chains which involve d-d overlap; dimmer formation on these chains; and/or charge ordering on the chains dependent on band filling. Understanding the low temperature structural and metal (M) to insulator (I) transition in the spinel compound CuIr2S4 provides a key link in the generalization to other such systems. S K-edge X-ray absorption spectroscopy (XAS) measurements across this M-I transition reflect a dramatic Ir d-electronic state redistribution^1. These results stimulated a detailed re-evaluation of the of I-phase crystal structure in terms of: decoupled chains of IrS6 octahedra along the (110)-type directions; and an Ir^3+ (Ir^4+-Ir^4+) Ir^3+ repeat pattern ordering, where the (Ir^4+-Ir^4+) pair forms a dimmer. Further, the electronic state changes, evidenced by the XAS, motivated a model in which the I-phase involves: an orbital ordering of the highest lying t2g electron into 1D chains; the 3/4 filling of this 1D band dictating the periodicity of the orbital/charge ordering; and the direct t2g-t2g dimmer bonding production of an antibonding state prominent in the S-K edge spectrum. The generalization of these concepts to other transition metal spinels will be addressed. ^1M. Croft, W. Caliebe, H. Woo, T. A. Tyson, D. Sills, Y. S. Hor, S-W. Cheong, V. Kiryukhin, and S-J. Oh, Phys. Rev. B 67 (Rapid Comm.), 201102 (2003)

  2. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  3. Orbital magnetic field driven metal-insulator transition in spinless extended Falicov-Kimball model on a triangular lattice

    NASA Astrophysics Data System (ADS)

    Yadav, Umesh K.

    2017-01-01

    Ground state properties of spinless, extended Falicov-Kimball model (FKM) on a finite size triangular lattice with orbital magnetic field normal to the lattice are studied using numerical diagonalization and Monte-Carlo simulation methods. We show that the ground state configurations of localized electrons strongly depend on the magnetic field. Magnetic field induces a metal to insulator transition accompanied by segregated phase to an ordered regular phase except at density nf = 1 / 2 of localized electrons. It is proposed that magnetic field can be used as a new tool to produce segregated phase which was otherwise accessible only either with correlated hopping or with large on-site interactions.

  4. Field-dependent perpendicular magnetic anisotropy and interfacial metal-insulator transition in CoFeB/MgO systems

    NASA Astrophysics Data System (ADS)

    Barsukov, Igor; Fu, Yu; Safranski, C.; Chen, Yu-Jin; Youngblood, B.; Goncalves, A.; Sampaio, L.; Arias, R.; Spasova, M.; Farle, M.; Krivorotov, I.

    2015-03-01

    The CoFeB/MgO systems play a central role in magnetic tunnel junction devices due to the high tunneling magnetoresistance ratio. A strong perpendicular anisotropy (PMA) and voltage-controlled anisotropy are beneficial for spintronics application. We study PMA in thin films of Ta/Co20Fe60B20/MgO in the thickness range of 0.9-2.5 nm and find that it can be best described by the first two order terms. Surprisingly, we find PMA to be strongly field-dependent. Our results show that the field dependence has significant implications for determining and customizing magnetic anisotropy in spintronic applications. Our data suggest that it can be caused by an inhomogeneous interfacial spin pinning with a possibly ferrimagnetic phase at the CoFeB/MgO interface. We perform magnetometry and transport measurements and find a magnetization peak and resistance transitions at 160K, which are consistent with the presence of an interfacial oxide phase undergoing a Morin-like transition.

  5. Metal-insulator transition in Nd{sub 1−x}Eu{sub x}NiO{sub 3}: Entropy change and electronic delocalization

    SciTech Connect

    Jardim, R. F. Andrade, S.; Barbeta, V. B.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-07

    The metal-insulator (MI) phase transition in Nd{sub 1–x}Eu{sub x}NiO{sub 3}, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat C{sub P}(T). The MI transition temperature (T{sub MI}) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dT{sub MI}/dP were found: (i) for x ≤ 0.15, dT{sub MI}/dP is nearly constant and ∼−4.3 K/kbar; (ii) for x ≥ 0.15, dT{sub MI}/dP increases with x and it seems to reach a saturation value ∼−6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of T{sub MI}. The entropy change (ΔS) at T{sub MI} for the sample x = 0, estimated by using the dT{sub MI}/dP data and the Clausius-Clapeyron equation, resulted in ΔS ∼ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔS{sub M} ∼ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and C{sub P}(T) data indicates that the entropy change at T{sub MI} is mainly due to the electronic delocalization and not related to the AF transition.

  6. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    PubMed Central

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-01-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent. PMID:27033955

  7. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    SciTech Connect

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

  8. Theory of the magnetic and metal-insulator transitions in RNiO3 bulk and layered structures.

    PubMed

    Lau, Bayo; Millis, Andrew J

    2013-03-22

    A slave rotor--Hartree-Fock formalism is presented for studying the properties of the p-d model describing perovskite transition metal oxides, and a flexible and efficient numerical formalism is developed for its solution. The methodology is shown to yield, within a unified formulation, the significant aspects of the rare-earth nickelate phase diagram, including the paramagnetic metal state observed for the LaNiO3 and the correct ground-state magnetic order of insulating compounds. It is then used to elucidate ground state changes occurring as morphology is varied from bulk to strained and unstrained thin-film form. For ultrathin films, epitaxial strain and charge transfer to the apical out-of-plane oxygen sites are shown to have significant impact on the phase diagram.

  9. Theory of the Magnetic and Metal-Insulator Transitions in RNiO3 Bulk and Layered Structures

    NASA Astrophysics Data System (ADS)

    Lau, Bayo; Millis, Andrew J.

    2013-03-01

    A slave rotor—Hartree-Fock formalism is presented for studying the properties of the p-d model describing perovskite transition metal oxides, and a flexible and efficient numerical formalism is developed for its solution. The methodology is shown to yield, within a unified formulation, the significant aspects of the rare-earth nickelate phase diagram, including the paramagnetic metal state observed for the LaNiO3 and the correct ground-state magnetic order of insulating compounds. It is then used to elucidate ground state changes occurring as morphology is varied from bulk to strained and unstrained thin-film form. For ultrathin films, epitaxial strain and charge transfer to the apical out-of-plane oxygen sites are shown to have significant impact on the phase diagram.

  10. Theory of the magnetic and metal-insulator transitions in RNiO3 bulk and layered

    NASA Astrophysics Data System (ADS)

    Lau, Bayo; Millis, Andrew J.

    2013-03-01

    A slave rotor-Hartree Fock formalism is presented for studying the properties of the p-d model describing perovskite transition metal oxides, and a flexible and efficient numerical formalism is developed for its solution. The methodology is shown to yield, within an unified formulation, the significant aspects of the rare earth nickelate phase diagram, including the paramagnetic metal state observed for the LaNiO3 and the correct ground-state magnetic order of insulating compounds. It is then used to elucidate ground state changes occurring as morphology is varied from bulk to strained and un-strained thin-film form. For ultrathin films, epitaxial strain and charge-transfer to the apical out-of-plane oxygen sites are shown to have significant impact on the phase diagram. This effort is supported by US National Science Foundation under grant NSF-DMR-1006282

  11. Superconductivity and crystal structural origins of the metal-insulator transition in Ba6 -xSrxNb10O30 tetragonal tungsten bronzes

    NASA Astrophysics Data System (ADS)

    Kolodiaznyi, Taras; Sakurai, Hiroya; Isobe, Masaaki; Matsushita, Yoshitaka; Forbes, Scott; Mozharivskyj, Yurij; Munsie, Timothy J. S.; Luke, Graeme M.; Gurak, Mary; Clarke, David R.

    2015-12-01

    Ba6 -xSrxNb10O30 solid solution with 0 ≤ x ≤6 forms the filled tetragonal tungsten bronze (TTB) structure. The Ba-end member crystallizes in the highest symmetry P 4 /m b m space group (a =b =12.5842 (18 )Å and c =3.9995 (8 )Å ) and so do all the compositions with 0 ≤ x ≤5 . The Sr-end member of the solid solution crystallizes in the tentatively assigned A m a m space group (a *=17.506 (4 )Å , b *=34.932 (7 )Å , and c *=7.7777 (2 )Å ). The latter space group is related to the parent P 4 /m b m TTB structure as a * ≈ √{2 }a ,b * ≈2 √{2 }a ,c *=2 c . Low-temperature specific heat measurements indicate that the Ba-rich compositions with x ≤2 are conventional BCS superconductors with TC ≤1.6 K and superconducting energy gaps of ≤0.38 meV. The values of the TC in the cation-filled Nb-based TTBs reported here are comparable with those of the unfilled KxWO3 and NaxWO3 TTBs having large alkali ion deficiency. As the unit cell volume decreases with increasing x , an unexpected metal-insulator transition (MIT) in Ba6 -xSrxNb10O30 occurs at x ≥3 . We discuss the possible origins of the MIT in terms of the carrier concentration, symmetry break, and Anderson localization.

  12. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    DOE PAGES

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; ...

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Usingmore » space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

  13. The metal-insulator transition in vanadium dioxide: A view at bulk and surface contributions for thin films and the effect of annealing

    NASA Astrophysics Data System (ADS)

    Yin, W.; West, K. G.; Lu, J. W.; Pei, Y.; Wolf, S. A.; Reinke, P.; Sun, Y.

    2009-06-01

    Vanadium dioxide is investigated as potential oxide barrier in spin switches, and in order to incorporate VO2 layers in complex multilayer devices, it is necessary to understand the relation between bulk and surface/interface properties. Highly oriented VO2 thin films were grown on (0001) sapphire single crystal substrates with reactive bias target ion beam deposition. In the analysis of the VO2 films, bulk-sensitive methods [x-ray diffraction (XRD) and transport measurements] and surface sensitive techniques [photoelectron spectroscopy (PES) and scanning tunneling microscopy and spectroscopy] were employed. The samples were subjected to heating cycles with annealing temperatures of up to 425 and 525K. Prior to annealing the VO2 films exhibit the transition from the monoclinic to the tetragonal phase with the concurrent change in conductivity by more than a factor of 103 and their phase purity is confirmed by XRD. Annealing to 425K and thus cycling across the metal-insulator transition (MIT) temperature has no impact on the bulk properties of the VO2 film but the surface undergoes irreversible electronic changes. The observation of the valence band with PES during the annealing illustrates that the surface adopts a partially metallic character, which is retained after cooling. Annealing to a higher temperature (525K ) triggers a modification of the bulk, which is evidenced by a considerable reduction in the MIT characteristics, and a degradation in crystallite morphology. The local measurement of the conductivity with scanning tunneling spectroscopy shows the transition of the surface from predominantly semiconducting surface prior to annealing to a surface with an overwhelming contribution from metallic sections afterward. The spatial distribution of metallic regions cannot be linked in a unique manner to the crystallite size or location within the crystallites. The onset of oxygen depletion at the surface is held responsible for this behavior. The onset of bulk

  14. Spin-orbit contribution to the Hall coefficient approaching the metal-insulator transition: An explanation for the critical behavior of Ge:Sb

    NASA Astrophysics Data System (ADS)

    Castner, T. G.

    1990-09-01

    It is demonstrated that the band spin-orbit contribution to the Hall conductivity σyx can qualitatively explain the critical behavior of the Hall coefficient RH for Ge:Sb reported by Field and Rosenbaum. The spin-orbit contribution to σyx for n-type Ge has been experimentally determined by Chazalviel and leads to an R-1H versus (n/nc-1) dependence that is consistent with the Ge:Sb data. This result demonstrates a significant extraordinary contribution to RH for some very weakly paramagnetic metal-insulator systems when closely approaching the critical density nc.

  15. D2-D1 phase transition of columnar liquid crystals

    NASA Astrophysics Data System (ADS)

    Sun, Y. F.; Swift, J.

    1986-04-01

    The D2-D1 phase transition in columnar liquid crystals of the HAT series [e.g., HAT11 (triphenelene hexa-n-dodecanoate)] is discussed within the framework of Landau theory. The order parameters which describe the transition are abstracted from a tensor density function, and are associated with two irreducible representations of the symmetry group of the high-temperature D2 phase. A mechanism for a first-order transition is then suggested in accordance with both theoretical considerations and the experimental result for the D2-D1 transition. Two possible arrangements of the herringbone structure of the D1 phase are obtained, each of which gives six orientational states in the low-temperature D1 phase.

  16. Energy level transitions of gas in a 2D nanopore

    SciTech Connect

    Grinyaev, Yurii V.; Chertova, Nadezhda V.; Psakhie, Sergei G.

    2015-10-27

    An analytical study of gas behavior in a 2D nanopore was performed. It is shown that the temperature dependence of gas energy can be stepwise due to transitions from one size-quantized subband to another. Taking into account quantum size effects results in energy level transitions governed by the nanopore size, temperature and gas density. This effect leads to an abrupt change of gas heat capacity in the nanopore at the above varying system parameters.

  17. 2D-3D transition of gold cluster anions resolved

    NASA Astrophysics Data System (ADS)

    Johansson, Mikael P.; Lechtken, Anne; Schooss, Detlef; Kappes, Manfred M.; Furche, Filipp

    2008-05-01

    Small gold cluster anions Aun- are known for their unusual two-dimensional (2D) structures, giving rise to properties very different from those of bulk gold. Previous experiments and calculations disagree about the number of gold atoms nc where the transition to 3D structures occurs. We combine trapped ion electron diffraction and state of the art electronic structure calculations to resolve this puzzle and establish nc=12 . It is shown that theoretical studies using traditional generalized gradient functionals are heavily biased towards 2D structures. For a correct prediction of the 2D-3D crossover point it is crucial to use density functionals yielding accurate jellium surface energies, such as the Tao-Perdew-Staroverov-Scuseria (TPSS) functional or the Perdew-Burke-Ernzerhof functional modified for solids (PBEsol). Further, spin-orbit effects have to be included, and large, flexible basis sets employed. This combined theoretical-experimental approach is promising for larger gold and other metal clusters.

  18. Chemical vapour deposition: Transition metal carbides go 2D

    DOE PAGES

    Gogotsi, Yury

    2015-08-17

    Here, the research community has been steadily expanding the family of few-atom-thick crystals beyond graphene, discovering new materials or producing known materials in a 2D state and demonstrating their unique properties1, 2. Recently, nanometre-thin 2D transition metal carbides have also joined this family3. Writing in Nature Materials, Chuan Xu and colleagues now report a significant advance in the field, showing the synthesis of large-area, high-quality, nanometre-thin crystals of molybdenum carbide that demonstrate low-temperature 2D superconductivity4. Moreover, they also show that other ultrathin carbide crystals, such as tungsten and tantalum carbides, can be grown by chemical vapour deposition with a highmore » crystallinity and very low defect concentration.« less

  19. Chemical vapour deposition: Transition metal carbides go 2D

    SciTech Connect

    Gogotsi, Yury

    2015-08-17

    Here, the research community has been steadily expanding the family of few-atom-thick crystals beyond graphene, discovering new materials or producing known materials in a 2D state and demonstrating their unique properties1, 2. Recently, nanometre-thin 2D transition metal carbides have also joined this family3. Writing in Nature Materials, Chuan Xu and colleagues now report a significant advance in the field, showing the synthesis of large-area, high-quality, nanometre-thin crystals of molybdenum carbide that demonstrate low-temperature 2D superconductivity4. Moreover, they also show that other ultrathin carbide crystals, such as tungsten and tantalum carbides, can be grown by chemical vapour deposition with a high crystallinity and very low defect concentration.

  20. Flow transitions in a 2D directional solidification model

    NASA Technical Reports Server (NTRS)

    Larroude, Philippe; Ouazzani, Jalil; Alexander, J. Iwan D.

    1992-01-01

    Flow transitions in a Two Dimensional (2D) model of crystal growth were examined using the Bridgman-Stockbarger me thod. Using a pseudo-spectral Chebyshev collocation method, the governing equations yield solutions which exhibit a symmetry breaking flow tansition and oscillatory behavior indicative of a Hopf bifurcation at higher values of Ra. The results are discussed from fluid dynamic viewpoint, and broader implications for process models are also addressed.

  1. Circular photogalvanic effect caused by the transitions between edge and 2D states in a 2D topological insulator

    NASA Astrophysics Data System (ADS)

    Magarill, L. I.; Entin, M. V.

    2016-12-01

    The electron absorption and the edge photocurrent of a 2D topological insulator are studied for transitions between edge states to 2D states. The circular polarized light is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation. It is shown that the edge-state current is found to exceed the 2D current owing to the topological protection of the edge states.

  2. Infrared spectroscopic study of the local structural changes across the metal insulator transition in nickel-doped GdBaCo{sub 2}O{sub 5.5}

    SciTech Connect

    Yasodha, P.; Premila, M.; Bharathi, A.; Valsakumar, M.C.; Rajaraman, R.; Sundar, C.S.

    2010-11-15

    Phonons in GdBaCo{sub 2}O{sub 5.5} have been identified using infrared spectroscopy and their mode assignments have been carried out using ab initio lattice dynamical calculations. Metal insulator transitions in undoped and nickel-doped GdBaCo{sub 2}O{sub 5.5} have been probed using infrared absorption spectroscopy. The phonon modes corresponding to the bending mode of the CoO{sub 6} octahedra/pyramids are seen to soften, broaden and develop an asymmetry across the insulator-metal transition pointing to extensive electron phonon interaction effects in these systems. Correlated changes of the phonon line shape parameters associated with the transition indicate a suppression of T{sub MIT} with increased nickel doping of the cobalt sublattice. Temperature dependence of the octahedral stretching mode frequencies in undoped GdBaCo{sub 2}O{sub 5.5} points to distinct structural distortions accompanying the high temperature metallic transition. - Graphical abstract: Softening of the bending mode across T{sub MIT}.

  3. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    SciTech Connect

    Shao, Tao; Qi, Zeming Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin; Wang, Yu; Liu, Miao

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  4. Changes in the electronic structure and spin dynamics across the metal-insulator transition in LaLa1-xSrxCoO3

    SciTech Connect

    Smith, R. X.; Hoch, M. J. R.; Moulton, W. G.; Kuhns, P. L.; Reyes, A. P.; Boebinger, G. S.; Zheng, H.; Mitchell, J. F.

    2016-01-25

    The magnetoelectronic properties of La1-xSrxCoO3, which include giant magnetoresistance, are strongly dependent on the level of hole doping. The system evolves, with increasing x, from a spin glass insulator to a metallic ferromagnet with a metal-insulator (MI) transition at xC ~ 0.18. Nanoscale phase separation occurs in the insulating phase and persists, to some extent, into the just-metallic phase. The present experiments at 4.2 K have used 139La NMR to investigate the transition from hopping dynamics for x < xC to Korringa-like ferromagnetic metal behavior for x > xC. A marked decrease in the spin-lattice relaxation rate is found in the vicinity of xC as the MI transition is crossed. Lastly, this behavior is accounted for in terms of the evolution of the electronic structure and dynamics with cluster size.

  5. Depinning transition and 2D superlubricity in incommensurate colloidal monolayers

    NASA Astrophysics Data System (ADS)

    Mandelli, Davide; Vanossi, Andrea; Manini, Nicola; Tosatti, Erio

    2014-03-01

    Colloidal monolayers sliding over periodic corrugated potential are highly tunable systems allowing to visualize the dynamics between crystalline surfaces. Based on molecular dynamics, Vanossi and coworkers reproduced the main experimental results and explored the potential impact of colloid sliding in nanotribology. The degree of interface commensurability was found to play a major role in determining the frictional properties, the static friction force Fs becoming vanishingly small in incommensurate geometries for weak corrugation U0.Lead by this result,here we systematically investigate the possibility to observe a 2D Aubry-like transition from a superlubric state to a pinned state for increasing U0. By using a reliable protocol, we generate annealed configurations at different values of U0 for an underdense monolayer. We find Fs to be vanishingly small up to a critical corrugation Uc coinciding with an abrupt structural transition in the ground state configuration. Similarly to what is observed in the Frenkel Kontorova model,this transition is characterized by a significant decrease in the number of particles sampling regions near the maxima of the substrate potential. Research partly sponsored by Sinergia Project CRSII2 136287-1 and ERC 2012ADG320796 MODPHYSFRICT.

  6. Controlling the sharpness of metal-insulator transition in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (0 ≤ x ≤ 0.35) films

    NASA Astrophysics Data System (ADS)

    Chen, Pingfan; Huang, Zhen; Tan, Xuelian; Chen, Binbin; Zhi, Bowen; Gao, Guanyin; Chen, Feng; Wu, Wenbin

    2014-10-01

    We report that epitaxial strain and chemical doping can be used cooperatively to tune the sharpness of metal-insulator transition (MIT) in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (LPCMO) films. Compared to multiple MITs in anisotropically strained LPCMO/(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(001)C (LSAT) films with a phase-separated ground state, the lattice-matched LPCMO/NdGaO3(110)Or (NGO) films show a sharp MIT near the Curie temperature (TC), with a ferromagnetic-metallic ground state. The sharpness of MIT, as evaluated by the temperature coefficient of resistance (TCR), can be two times larger in LPCMO/NGO films than in LPCMO/LSAT films. Moreover, for LPCMO/NGO films, TCR greatly relies on the Pr doping level x, where a maximum TCR value of 88.17% K-1 can be obtained at x = 0.25, but shows less dependence on the film thicknesses. These results suggest that the combination of epitaxial strain and chemical doping could be employed to control not only the ground state of the manganite films, but the sharpness of MIT at various TC, providing the feasibility to design manganite-based infrared devices in a broad temperature range.

  7. Relationship between superconductor and metal-insulator transitions in a large class of tetragonal 1:2:3 cuprates Ca-R-Ba-Cu-O (R=La,Nd)

    NASA Astrophysics Data System (ADS)

    Goldschmidt, D.; Knizhnik, A.; Direktovitch, Y.; Reisner, G. M.; Eckstein, Y.

    1995-11-01

    We report superconductor and transport properties of a large class of tetragonal 1:2:3 cuprates represented by the chemical formula (CaxR1-x)[Ba3-z-xRz-(1-x)]Cu3Oy, where R=La or Nd and existing as high-purity materials in a large range of z and x. At a given z, these materials maintain, through compensating cosubstitutions, a constant charge Q of the noncopper cations (Q=6+z) independent of x. By accurate control of oxygen content y, both cation and anion charge sources were kept constant. Under these isoelectronic conditions (constant electron concentration n) big changes in transition temperature Tc, resistivity ρ and thermopower (TEP) S occur, suggesting that the microscopic hole density in the CuO2 planes h changes. Having a single Tmaxc (maximal Tc), this material family behaves as a single material. Besides, for all values of Q, x, and y and for each R we show that Tc, ρ, and S can each be represented by a single curve when plotted as a function of y-yM-I(Q,x), where yM-I denotes the value of y at the metal-insulator (M-I) transition. Therefore, there exists a one to one correspondence between h and y-yM-I, but there is no straightforward relation between h and n. We found an empirical formula describing the functional dependence of yM-I on Q and x. This allows one to estimate yM-I, Tc, ρ, and S in many materials. Our results are interpreted in terms of a simple band picture which is modified to consider the existence of low-mobility states in the vicinity of EF. This accounts for the relatively low TEP at the M-I transition.

  8. Nonadiabatic effects in a generalized Jahn-Teller lattice model: Heavy and light polarons, pairing, and the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Majerníková, Eva; Riedel, J.; Shpyrko, S.

    2002-05-01

    The self-consistent ground state polaron potential of one-dimensional lattice of two-level molecules with spinless electrons and two dispersionless phonon modes with linear coupling and quantum phonon-assisted (nonadiabatic) transitions between the levels is found anharmonic in phonon displacements. As a function of these, the potential shows a crossover from two nonequivalent broad minima to a single narrow minimum which correspond to the positions of the levels in the ground state. Generalized variational approach respecting the mixing of levels (reflection) via a variational parameter implies prominent nonadiabatic effects: (i) In the limit of the symmetric E⊗e Jahn-Teller situation they cause transition between the regime of the predominantly one-level ``heavy'' polaron and a ``light'' polaron oscillating between the levels due to phonon assistance with almost vanishing polaron displacement. Vanishing polaron selflocalization implies enhancement of the electron transfer due to decrease of the ``heavy'' polaron mass (undressing) at the point of the transition. There can occur pairing of ``light'' polarons due to exchange of virtual phonons. Continuous transition to new energy ground state close to the transition from ``heavy'' polaron phase to ``light'' (bi)polaron phase occurs. In the ``heavy'' phase, we have found anomalous (anharmonic) enhancements of quantum fluctuations of the phonon coordinate, conjugated momentum and their product in the ground state as functions of the effective coupling which reach their maxima at E⊗e JT symmetry. They decrease rapidly to their harmonic values as soon as the ``light'' phase is stabilized. (ii) Nonadiabatic dependence of the polaron mass (Debye-Waller screening) on the optical phonon frequency appears. (iii) The contribution of Rabi oscillations to the transfer enhances significantly quantum shift of the insulator-metal transition line to higher values of the critical effective electron-phonon coupling supporting so

  9. The metal-insulator transition in nanocrystalline Pr0.67Ca0.33MnO3: the correlation between supercooling and kinetic arrest.

    PubMed

    Rawat, R; Chaddah, P; Bag, Pallab; Das, Kalipada; Das, I

    2012-10-17

    The transition and hysteresis widths of a disorder broadened first order magnetic transition vary in H-T space which influences the co-existing phase fraction at low temperature arising due to kinetic arrest of the first order transition. We explored the role of change in the relative width of the supercooling/superheating band and kinetic arrest band for a ferromagnetic metallic to antiferromagnetic insulating transition. It is shown that for a correlated kinetic arrest and supercooling bands, the topology of the devitrification curves (or transformation across the (H(K),T(K)) band during warming) changes with the change in the relative width of these two bands. In addition to this, for a broader kinetic arrest band, the transformation temperature across the superheating band under constant H now depends on the arrested phase fraction. These predictions have been tested on nanocrystalline Pr(0.67)Ca(0.33)MnO(3), which is known to show a large variation in hysteresis width in H-T space. This is the first report where correlation between the kinetic arrest band and the supercooling band has been shown experimentally, in contrast to the universal observation of anticorrelation reported so far.

  10. Enhanced ferromagnetic and metal insulator transition in Sm0.55Sr0.45MnO3 thin films: Role of oxygen vacancy induced quenched disorder

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Siwach, P. K.; Kaur, A.; Singh, H. K.

    2010-11-01

    Effect of quenched disorder (QD) caused by oxygen vacancy (OV) and substrate induced inhomogeneous compressive strain, on the magnetic and transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films is investigated. QD is related intimately to the ordering/disordering of the OVs and controls the paramagnetic-ferromagnetic/insulator-metal transition. OV ordered films show enhanced TC/TIM˜165 K, which is depressed by oxygen annealing. OV disordering realized by quenching reduces TC/TIM. The first order IM transition observed in SSMO single crystals is transformed into nonhysteretic and continuous one in the OV ordered films. QD appears to be diluted by OV disorder/annihilation and results in stronger carrier localization.

  11. Electric field effect near the metal-insulator transition of a two-dimensional electron system in SrTiO3

    NASA Astrophysics Data System (ADS)

    Ahadi, Kaveh; Shoron, Omor F.; Marshall, Patrick B.; Mikheev, Evgeny; Stemmer, Susanne

    2017-02-01

    SmTiO3/SrTiO3 interfaces exhibit a two-dimensional electron system with carrier densities in the order of 3 × 1014 cm-2 due to the polar discontinuity at the interface. Here, electric field effect is used to investigate an electron system at this interface whose carrier density has been depleted substantially by the gate metal and by reducing the thickness of the SmTiO3. At zero applied gate voltage, the sheet resistance exceeds the quantum resistance, h/e2, by more than an order of magnitude, and the SrTiO3 channel is in the hopping transport regime. The electric field modulates the carrier density in the channel, which approaches the transition to a metal at positive gate bias. The channel resistances are found to scale by a single parameter that depends on the gate voltage, similar to two-dimensional electron systems in high-quality semiconductors.

  12. Finite-size driven topological and metal-insulator transition in (Bi1-xInx)2 Se3thin films

    NASA Astrophysics Data System (ADS)

    Salehi, Maryam; Shapourian, Hassan; Koirala, Nikesh; Brahlek, Matthew; Moon, Jisoo; Oh, Seongshik

    In a topological insulator (TI), if one of its heavy elements is replaced by a light one, the spin-orbit coupling (SOC) strength decreases and eventually the TI transforms into a normal insulator beyond a critical level of substitution.This is the standard description of the topological phase transition (TPT). However, this notion of TPT, driven solely by the SOC (or something equivalent), is not complete for finite size samples considering that the thickness of the topological surface states diverges at the critical point. Here, on specially-engineered (BixIn1-x)2 Se3 thin films, using systematic transport measurments we show that not only the SOC but also the finite sample size can induce TPT. This study sheds light on the role of spatial confinement as an extra tuning parameter controlling the topological critical point.

  13. Magnetism variations and susceptibility hysteresis at the metal-insulator phase transition temperature of VO2 in a composite film containing vanadium and tungsten oxides

    NASA Astrophysics Data System (ADS)

    Akande, Amos A.; Rammutla, Koena E.; Moyo, Thomas; Osman, Nadir S. E.; Nkosi, Steven S.; Jafta, Charl J.; Mwakikunga, Bonex W.

    2015-02-01

    We report on the magnetic property of 0.67-WO3+0.33-VOx mixture film deposit on the corning glass substrate using the chemical sol-gel and atmospheric pressure chemical vapor deposition (APCVD) methods. The XRD and Raman spectroscopy confirm species of both materials, and the morphological studies with FIB-SEM and TEM reveal segregation of W and V atoms. XPS reveals that V4+ from VO2 forms only 11% of the film; V3+ in the form of V2O3 form 1% of the film, 21% is V5+ from V2O5 and 67% is given to W6+ from WO3. The analysis of the ESR data shows some sharp changes in the magnetism near the metal-to-insulator (MIT), which could be theoretically interpreted as the ordering or alignment of electron spins from net moment nature to parallel alignment of magnetic moment. The derivatives of magnetic susceptibility established the thermally induced magnetic property: two distinct transitions of 339 K for heating data and 338 K for cooling data for 151.2 mT field were obtained. Similar results were also obtained for 308.7 mT field, 336 K for heating data and 335 K for cooling data. VSM results confirm a paramagnetic phase with a small amount of magnetically ordered phase.

  14. Transition to chaos in an open unforced 2D flow

    NASA Technical Reports Server (NTRS)

    Pulliam, Thomas H.; Vastano, John A.

    1993-01-01

    The present numerical study of unsteady, low Reynolds number flow past a 2D airfoil attempts to ascertain the bifurcation sequence leading from simple periodic to complex aperiodic flow with rising Reynolds number, as well as to characterize the degree of chaos present in the aperiodic flow and assess the role of numerics in the modification and control of the observed bifurcation scenario. The ARC2D Navier-Stokes code is used in an unsteady time-accurate mode for most of these computations. The system undergoes a period-doubling bifurcation to chaos as the Reynolds number is increased from 800 to 1600; its chaotic attractors are characterized by estimates of the fractal dimension and partial Liapunov exponent spectra.

  15. Experimental Study of the 2D Jamming Transition

    NASA Astrophysics Data System (ADS)

    Cheng, Xiang

    2009-03-01

    We can study a jammed system of particles by following a loosely-packed configuration as the individual particles increase their size until all the particles are constrained by their neighbors. Because tapioca pearls swell to over twice their initial diameter when submerged in water, they offer an ideal medium with which to study properties of the jamming transition in the presence of frictional interactions. Using an array of ˜ 10,000 tapioca pearls, we study several static and dynamic signatures of the two-dimensional jamming transition. The amplitude of the first peak of the pair-correlation function changes non-monotonically as the packing fraction of the system increases. This is consistent with recent experiments in a colloidal system of NIPA particles at finite temperatures [1]. This signature is a vestige of the divergence of this peak in the frictionless-sphere limit [2]. A length scale, defined by the spatial velocity correlation function, and the number hexagons in the Voronoi tessellation have pronounced maxima at the transition. [1] Z. Zhang, D. T. N. Chen, A. G. Yodh, K. B. Aptowicz and P. Habdas, Bull. Am. Phys. Soc. Volume 53, Number 2 (2008). [2] C. S. O'Hern, L. E. Silbert, A. J. Liu and S. R. Nagel, Phys. Rev. E 68, 011306 1-19 (2003).

  16. Thermoelectric effect across the metal-insulator domain walls in VO2 microbeams.

    PubMed

    Cao, J; Fan, W; Zheng, H; Wu, J

    2009-12-01

    We report on measurements of Seebeck effect in single-crystal VO(2) microbeams across their metal-insulator phase transition. One-dimensionally aligned metal-insulator domain walls were reversibly created and eliminated along single VO(2) beams by varying temperature, which allows for accurate extraction of the net contribution to the Seebeck effect from these domain walls. We observed significantly lower Seebeck coefficient in the metal-insulator coexisting regime than predicted by a linear combination of contributions from the insulator and metal domains. This indicates that the net contribution of the domain walls has an opposite sign from that of the insulator and metal phases separately. Possible origins that may be responsible for this unexpected effect were discussed in the context of complications in this correlated electron material.

  17. 2D to 3D transition of polymeric carbon nitride nanosheets

    SciTech Connect

    Chamorro-Posada, Pedro; Vázquez-Cabo, José; Martín-Ramos, Pablo; Martín-Gil, Jesús; Navas-Gracia, Luis M.; Dante, Roberto C.

    2014-11-15

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

  18. Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes.

    PubMed

    Choi, Jungwook; Chen, Haorong; Li, Feiran; Yang, Lingming; Kim, Steve S; Naik, Rajesh R; Ye, Peide D; Choi, Jong Hyun

    2015-11-04

    2D transition metal dichalcogenides (TMDCs) are nanomanufactured using a generalized strategy with self-assembled DNA nanotubes. DNA nanotubes of various lengths serve as lithographic etch masks for the dry etching of TMDCs. The nanostructured TMDCs are studied by atomic force microscopy, photoluminescence, and Raman spectroscopy. This parallel approach can be used to manufacture 2D TMDC nanostructures of arbitrary geometries with molecular-scale precision.

  19. Condensate fraction in a 2D Bose gas measured across the Mott-insulator transition.

    PubMed

    Spielman, I B; Phillips, W D; Porto, J V

    2008-03-28

    We realize a single-band 2D Bose-Hubbard system with Rb atoms in an optical lattice and measure the condensate fraction as a function of lattice depth, crossing from the superfluid to the Mott-insulating phase. We quantitatively identify the location of the superfluid to normal transition by observing when the condensed fraction vanishes. Our measurement agrees with recent quantum Monte Carlo calculations for a finite-sized 2D system to within experimental uncertainty.

  20. Blue Phosphorene Oxide: Strain-Tunable Quantum Phase Transitions and Novel 2D Emergent Fermions

    NASA Astrophysics Data System (ADS)

    Zhu, Liyan; Wang, Shan-Shan; Guan, Shan; Liu, Ying; Zhang, Tingting; Chen, Guibin; Yang, Shengyuan A.

    2016-10-01

    Tunable quantum phase transitions and novel emergent fermions in solid state materials are fascinating subjects of research. Here, we propose a new stable two-dimensional (2D) material, the blue phosphorene oxide (BPO), which exhibits both. Based on first-principles calculations, we show that its equilibrium state is a narrow-bandgap semiconductor with three bands at low energy. Remarkably, a moderate strain can drive a semiconductor-to-semimetal quantum phase transition in BPO. At the critical transition point, the three bands cross at a single point at Fermi level, around which the quasiparticles are a novel type of 2D pseudospin-1 fermions. Going beyond the transition, the system becomes a symmetry-protected semimetal, for which the conduction and valence bands touch quadratically at a single Fermi point that is protected by symmetry, and the low-energy quasiparticles become another novel type of 2D double Weyl fermions. We construct effective models characterizing the phase transition and these novel emergent fermions, and we point out several exotic effects, including super Klein tunneling, supercollimation, and universal optical absorbance. Our result reveals BPO as an intriguing platform for the exploration of fundamental properties of quantum phase transitions and novel emergent fermions, and also suggests its great potential in nanoscale device applications.

  1. Millimeter Wave Metal-Insulator-Metal Detector/Mixer Diode.

    DTIC Science & Technology

    1983-12-01

    AO-A138 391 MILLIMETER WAVE METAL-INSULATOR- METAL DETECTOR /MIXER 1/1 DIODE(VI NORTH CAROLIN A AGRICULTURAL A NO TECHNI CA L STATE UNIV GREENSRO. C TV...163-A I V AFWAL-TR-83-1179 MILLIMETER WAVE METAL-INSULATOR- METAL DETECTOR /MIXER DIODE CHUNG YU NORTH CAROLINA A&T STATE UNIVERSITY GREENSBORO, NORTH...TITLE (ad subsorle.I S. TYPE CrjflT&PEO OER MILLIMETER WAVE May, 1981--July, 1983 METAL-INSULATOR- METAL DETECTOR /MIXER G. PERFORMING ORG. REPORT

  2. Spectroscopic investigation of the 3d 2D → nf 2F transitions in lithium

    NASA Astrophysics Data System (ADS)

    Shahzada, S.; Shah, M.; Haq, S. U.; Nawaz, M.; Ahmed, M.; Nadeem, Ali

    2016-05-01

    We report term energies and effective quantum numbers of the odd parity 3d 2D → nf 2F series of lithium using multi-step and multi-photon laser excitation schemes. The experiments were performed using three dye lasers simultaneously pumped by the second harmonic (532 nm) of a Q-switched Nd:YAG laser in conjunction with an atomic beam apparatus and thermionic diode ion detector. The first ionization potential of lithium has been determined as 43,487.13 ± 0.02 cm- 1 from the much extended 3d 2D → nf 2F (17 ≤ n ≤ 70) series. In addition, the oscillator strengths of the 3d 2D → nf 2F (15 ≤ n ≤ 48) transitions have been determined, showing a decreasing trend with the increase in principal quantum number n.

  3. Numerical studies of the melting transition in 2D Yukawa systems

    SciTech Connect

    Hartmann, P.; Donko, Z.; Kalman, G. J.

    2008-09-07

    We present the latest results of our systematic studies of the solid--liquid phase transition in 2D classical many-particle systems interacting with the Yukawa potential. Our previous work is extended by applying the molecular dynamic simulations to systems with up to 1.6 million particles in the computational box (for {kappa} = 2 case). Equilibrium simulations are performed for different coupling parameters in the vicinity of the expected melting transition ({gamma}{sub m}{sup {kappa}}{sup ={sup 2}}{approx_equal}415) and a wide range of observables are averaged over uncorrelated samples of the micro-canonical ensemble generated by the simulations.

  4. Frequency Comb Assisted IR Measurements of H_3^+, H_2D^+ and D_2H^+ Transitions

    NASA Astrophysics Data System (ADS)

    Jusko, Pavol; Asvany, Oskar; Schlemmer, Stephan

    2016-06-01

    We present recent measurements of the fundamental transitions of H_3^+, H_2D^+ and D_2H^+ in a 4 K 22-pole trap by action spectroscopic techniques. Either Laser Induced Inhibition of Cluster Growth (He attachment at T≈4 K), endothermic reaction of H_3^+ with O_2, or deuterium exchange has been used as measurement scheme. We used a 3 μm optical parametric oscillator coupled to a frequency comb in order to achieve accuracy generally below 1 MHz. Five transitions of H_3^+, eleven of H_2D^+ and ten of D_2H^+ were recorder in our spectral range. We compare our H_3^+ results with two previous frequency comb assisted works. Moreover, accurate determination of the frequency allows us to predict pure rotational transitions for H_2D^+ and D_2H^+ in the THz range. P. Jusko, C. Konietzko, S. Schlemmer, O. Asvany, J. Mol. Spec. 319 (2016) 55 O. Asvany, S. Brünken, L. Kluge, S. Schlemmer, Appl. Phys. B 114 (2014) 203 O. Asvany, J. Krieg, S. Schlemmer, Rev. Sci. Instr. 83 (2012) 093110 J.N. Hodges, A.J. Perry, P.A. Jenkins, B.M. Siller, B.J. McCall, J. Chem. Phys. 139 (2013) 164201 H.-C. Chen, C.-Y. Hsiao, J.-L. Peng, T. Amano, J.-T. Shy, Phys. Rev. Lett. 109 (2012) 263002

  5. Determining Transition State Geometries in Liquids Using 2D-IR

    SciTech Connect

    Harris, Charles; Cahoon, James F.; Sawyer, Karma R.; Schlegel, Jacob P.; Harris, Charles B.

    2007-12-11

    Many properties of chemical reactions are determined by the transition state connecting reactant and product, yet it is difficult to directly obtain any information about these short-lived structures in liquids. We show that two-dimensional infrared (2D-IR) spectroscopy can provide direct information about transition states by tracking the transformation of vibrational modes as a molecule crossed a transition state. We successfully monitored a simple chemical reaction, the fluxional rearrangement of Fe(CO)5, in which the exchange of axial and equatorial CO ligands causes an exchange of vibrational energy between the normal modes of the molecule. This energy transfer provides direct evidence regarding the time scale, transition state, and mechanism of the reaction.

  6. Disorder and interaction in 2D: exact diagonalization study of the Anderson-Hubbard-Mott model.

    PubMed

    Kotlyar, R; Das Sarma, S

    2001-03-12

    We investigate, by numerically calculating the charge stiffness, the effects of random diagonal disorder and electron-electron interaction on the nature of the ground state in the 2D Hubbard model through the finite-size exact diagonalization technique. By comparing with the corresponding 1D Hubbard model results and by using heuristic arguments we conclude that it is unlikely that there is a 2D metal-insulator quantum phase transition, although the effect of interaction in some range of parameters is to substantially enhance the noninteracting charge stiffness.

  7. Suppression of the metal-insulator transition by magnetic field in (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} (y = 0.0625)

    SciTech Connect

    Naito, Tomoyuki Fujishiro, Hiroyuki; Nishizaki, Terukazu; Kobayashi, Norio; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2014-06-21

    The (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} compound (y = 0.0625, T{sub MI-SS}=40 K), at the lower limit for occurrence of the first-order metal-insulator (MI) and simultaneous spin-state (SS) transitions, has been studied using electrical resistivity and magnetization measurements in magnetic fields up to 17 T. The isothermal experiments demonstrate that the low-temperature insulating phase can be destabilized by an applied field and the metallic phase returns well below the transition temperature T{sub MI-SS}. The reverse process with decreasing field occurs with a significant hysteresis. The temperature scans taken at fixed magnetic fields reveal a parabolic-like decrease in T{sub MI-SS} with increasing field strength and a complete suppression of the MI-SS transition in fields above 9 T.

  8. BKT phase transition in a 2D system with long-range dipole-dipole interaction

    NASA Astrophysics Data System (ADS)

    Fedichev, P. O.; Men'shikov, L. I.

    2012-01-01

    We consider phase transitions in 2D XY-like systems with long-range dipole-dipole interactions and demonstrate that BKT-type phase transition always occurs separating the ordered (ferroelectric) and the disordered (paraelectric) phases. The low-temperature phase corresponds to a thermal state with bound vortex-antivortex pairs characterized by linear attraction at large distances. Using the Maier-Schwabl topological charge model, we show that bound vortex pairs polarize and screen the vortex-antivortex interaction, leaving only the logarithmic attraction at sufficiently large separations between the vortices. At higher temperatures the pairs dissociate and the phase transition similar to BKT occurs, though at a larger temperature than in a system without the dipole-dipole interaction.

  9. The separation of overlapping transitions in β-carotene with broadband 2D electronic spectroscopy

    NASA Astrophysics Data System (ADS)

    Calhoun, Tessa R.; Davis, Jeffrey A.; Graham, Matthew W.; Fleming, Graham R.

    2012-01-01

    Broadband 2D electronic spectroscopy is applied to β-carotene, revealing new insight into the excited state dynamics of carotenoids by exploring the full energetic range encompassing the S0→S2 and S1→S1n transitions at 77 K. Multiple signals are observed in the regime associated with the proposed S∗ state and isolated through separate analysis of rephasing and nonrephasing contributions. Peaks in rephasing pathways display dynamic lineshapes characteristic of coupling to high energy vibrational modes, and simulation with a simple model supports their assignment to impulsive stimulated Raman scattering. A signal persisting beyond 10 ps in the nonrephasing spectra is still under investigation.

  10. Transport studies in 2D transition metal dichalcogenides and black phosphorus

    NASA Astrophysics Data System (ADS)

    Du, Yuchen; Neal, Adam T.; Zhou, Hong; Ye, Peide D.

    2016-07-01

    Two-dimensional (2D) materials are a new family of materials with interesting physical properties, ranging from insulating hexagonal boron nitride, semiconducting or semi-metallic transition metal dichalcogenides, to gapless metallic graphene. In this review, we provide a brief discussion of transport studies in transition metal dichalcogenides, including both semiconducting and semi-metallic phases, as well as a discussion of the newly emerged narrow bandgap layered material, black phosphorus, in terms of its electrical and quantum transport properties at room and cryogenic temperatures. Ultra-thin layered channel materials with atomic layer thickness in the cross-plane direction, together with relatively high carrier mobility with appropriate passivation techniques, provide the promise for new scientific discoveries and broad device applications.

  11. Interfractional trend analysis of dose differences based on 2D transit portal dosimetry

    NASA Astrophysics Data System (ADS)

    Persoon, L. C. G. G.; Nijsten, S. M. J. J. G.; Wilbrink, F. J.; Podesta, M.; Snaith, J. A. D.; Lustberg, T.; van Elmpt, W. J. C.; van Gils, F.; Verhaegen, F.

    2012-10-01

    Dose delivery of a radiotherapy treatment can be influenced by a number of factors. It has been demonstrated that the electronic portal imaging device (EPID) is valuable for transit portal dosimetry verification. Patient related dose differences can emerge at any time during treatment and can be categorized in two types: (1) systematic—appearing repeatedly, (2) random—appearing sporadically during treatment. The aim of this study is to investigate how systematic and random information appears in 2D transit dose distributions measured in the EPID plane over the entire course of a treatment and how this information can be used to examine interfractional trends, building toward a methodology to support adaptive radiotherapy. To create a trend overview of the interfractional changes in transit dose, the predicted portal dose for the different beams is compared to a measured portal dose using a γ evaluation. For each beam of the delivered fraction, information is extracted from the γ images to differentiate systematic from random dose delivery errors. From the systematic differences of a fraction for a projected anatomical structures, several metrics are extracted like percentage pixels with |γ| > 1. We demonstrate for four example cases the trends and dose difference causes which can be detected with this method. Two sample prostate cases show the occurrence of a random and systematic difference and identify the organ that causes the difference. In a lung cancer case a trend is shown of a rapidly diminishing atelectasis (lung fluid) during the course of treatment, which was detected with this trend analysis method. The final example is a breast cancer case where we show the influence of set-up differences on the 2D transit dose. A method is presented based on 2D portal transit dosimetry to record dose changes throughout the course of treatment, and to allow trend analysis of dose discrepancies. We show in example cases that this method can identify the causes of

  12. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    DOE PAGES

    Anasori, Babak; Shi, Chenyang; Moon, Eun Ju; ...

    2016-02-24

    In this paper, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M'2M"C2 and M'2M"2C3 – where M' and M" are two different early transition metals, such as Mo, Cr, Ta, Nb, V, andmore » Ti. The M' atoms only occupy the outer layers and the M" atoms fill the middle layers. In other words, M' atomic layers sandwich the middle M"–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. Finally, this finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.« less

  13. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    SciTech Connect

    Anasori, Babak; Shi, Chenyang; Moon, Eun Ju; Xie, Yu; Voigt, Cooper A.; Kent, Paul R. C.; May, Steven J.; Billinge, Simon J. L.; Barsoum, Michel W.; Gogotsi, Yury

    2016-02-24

    In this paper, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M'2M"C2 and M'2M"2C3 – where M' and M" are two different early transition metals, such as Mo, Cr, Ta, Nb, V, and Ti. The M' atoms only occupy the outer layers and the M" atoms fill the middle layers. In other words, M' atomic layers sandwich the middle M"–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. Finally, this finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in

  14. Topologically induced swarming phase transition on a 2D percolated lattice

    NASA Astrophysics Data System (ADS)

    Quint, David A.; Gopinathan, Ajay

    2015-07-01

    The emergence of collective motion, or swarming, in groups of moving individuals who orient themselves using only information from their neighbors is a very general phenomenon that occurs at multiple spatio-temporal scales. Swarms that occur in natural environments typically have to contend with spatial disorder such as obstacles that can hinder an individual’s motion or can disrupt communication with neighbors. We study swarming agents, possessing both aligning and mutually avoiding repulsive interactions, in a 2D percolated network representing a topologically disordered environment. We numerically find a phase transition from a collectively moving swarm to a disordered gas-like state above a critical value of the topological or environmental disorder. For agents that utilize only alignment interactions, we find that the swarming transition does not exist in the large system size limit, while the addition of a mutually repulsive interaction can restore the existence of the transition at a finite critical value of disorder. We find there is a finite range of topological disorder where swarming can occur and that this range can be maximized by an optimal amount of mutual repulsion.

  15. High efficient unidirectional surface plasmon excitation utilizing coupling between metal-insulator-metal waveguide and metal-insulator interface

    NASA Astrophysics Data System (ADS)

    Huang, Zhixiang; Xu, Ke; Pan, Deng

    2017-04-01

    A new structure is proposed, which can realize parallel coupling between metal-insulator-metal (MIM) waveguide and plasmon on metal-insulator (MI) interface. An example for wavelength of 680 nm shows the coupling efficiency can be high as 82%, with short coupling length of 1.2 μm. By using MIM waveguide with proper length, a unidirectional plasmon generator is realized. The generator shows excitation efficiency as high as 78%, with high extinction ratio as 1:170. It also shows a good tolerance for the wavelength. The results are of vital importance for optical integration and unidirectional plasmon excitation.

  16. 2D Transition-Metal-Dichalcogenide-Nanosheet-Based Composites for Photocatalytic and Electrocatalytic Hydrogen Evolution Reactions.

    PubMed

    Lu, Qipeng; Yu, Yifu; Ma, Qinglang; Chen, Bo; Zhang, Hua

    2016-03-09

    Hydrogen (H2) is one of the most important clean and renewable energy sources for future energy sustainability. Nowadays, photocatalytic and electrocatalytic hydrogen evolution reactions (HERs) from water splitting are considered as two of the most efficient methods to convert sustainable energy to the clean energy carrier, H2. Catalysts based on transition metal dichalcogenides (TMDs) are recognized as greatly promising substitutes for noble-metal-based catalysts for HER. The photocatalytic and electrocatalytic activities of TMD nanosheets for the HER can be further improved after hybridization with many kinds of nanomaterials, such as metals, oxides, sulfides, and carbon materials, through different methods including the in situ reduction method, the hot-injection method, the heating-up method, the hydro(solvo)thermal method, chemical vapor deposition (CVD), and thermal annealing. Here, recent progress in photocatalytic and electrocatalytic HERs using 2D TMD-based composites as catalysts is discussed.

  17. Critical exponents of dynamical conductivity in 2D percolative superconductor-insulator transitions: three universality classes.

    PubMed

    Karki, Pragalv; Loh, Yen Lee

    2016-11-02

    We simulate three types of random inductor-capacitor (LC) networks on [Formula: see text] square lattices. We calculate the dynamical conductivity using an equation-of-motion method in which timestep error is eliminated and windowing error is minimized. We extract the critical exponent a such that [Formula: see text] at low frequencies. The results suggest that there are three different universality classes. The [Formula: see text] model, with capacitances from each site to ground, has a  =  0.314(4). The [Formula: see text] model, with capacitances along bonds, has a  =  0. The [Formula: see text] model, with both types of capacitances, has a  =  0.304(1). This implies that classical percolative 2D superconductor-insulator transitions (SITs) generically have [Formula: see text] as [Formula: see text]. Therefore, any experiments that give a constant conductivity as [Formula: see text] must be explained in terms of quantum effects.

  18. Critical Exponents of Dynamical Conductivity in 2D Percolative Superconductor-Insulator Transitions: Three Universality Classes

    NASA Astrophysics Data System (ADS)

    Karki, Pragalv; Loh, Yen Lee

    We simulate three types of random inductor-capacitor (LC) networks on 4000x4000 lattices. We calculate the dynamical conductivity using an equation-of-motion method in which timestep error is eliminated and windowing error is minimized. We extract the critical exponent a such that σ (ω) ~ω-a at low frequencies. The results suggest that there are three different universality classes. The LijCi model, with capacitances from each site to ground, has a = 0 . 32 . The LijCij model, with capacitances along bonds, has a = 0 . The LijCiCij model, with both types of capacitances, has a = 0 . 30 . This implies that classical percolative 2D superconductor-insulator transitions (SITs) generically have σ (ω) --> ∞ as ω --> 0 . Therefore, experiments that give a constant conductivity as ω --> 0 must be explained in terms of quantum effects.

  19. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  20. Metal-insulator-metal capacitor using electrosprayed nanoparticles

    NASA Astrophysics Data System (ADS)

    Véliz, Bremnen; Bermejo, Sandra; Coll, Arnau; Castañer, Luis

    2014-07-01

    An electrospray technique has been used to deposit SiO2 nanoparticles as insulator layer of a metal-insulator-metal device. Impedance spectroscopy measurements show that a 4.4 factor increase in capacitance is achieved compared to a continuous dielectric layer of the same permittivity and dimensions.

  1. Hydrogen-bonding-induced polymorphous phase transitions in 2D organic nanostructures.

    PubMed

    Xu, Li; Miao, Xinrui; Zha, Bao; Deng, Wenli

    2013-05-01

    The 2D self-assembly of various 2-hydroxy-7-alkoxy-9-fluorenone (HAF) molecules has been investigated by scanning tunneling microscopy (STM) at the liquid/solid interface. A systematic study revealed that HAF molecules with different numbers of carbon atoms in their alkoxy chains could form two or three different kinds of nanostructures, that is, less-ordered, flower-like, and zig-zag patterns, owing to the formation of different types of intermolecular hydrogen bonds. The observed structural transition was found to be driven by molecular thermodynamics, surface diffusion, and the voltage pulse that was applied to the STM tip. The zig-zag pattern was the most stable of these configurations. An odd-even effect on the flower-like structure, as induced by the odd and even number of carbon atoms in the side chain, was observed by STM. The influence of the odd-even effect on the melting point has a close relationship with the molecular self-assembled pattern. Our results are significant for understanding the influence of hydrogen-bonding interactions on the dominant adsorption behavior on the surface and provide a new visual approach for observing the influence of the odd-even effect on the phase transition.

  2. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    SciTech Connect

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilized explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.

  3. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    DOE PAGES

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; ...

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilizedmore » explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  4. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  5. Analysis of the antiferromagnetic phase transitions of the 2D Kondo lattice

    NASA Astrophysics Data System (ADS)

    Jones, Barbara

    2010-03-01

    The Kondo lattice continues to present an interesting and relevant challenge, with its interactions between Kondo, RKKY, and coherent order. We present our study[1] of the antiferromagnetic quantum phase transitions of a 2D Kondo-Heisenberg square lattice. Starting from the nonlinear sigma model as a model of antiferromagnetism, we carry out a renormalization group analysis of the competing Kondo-RKKY interaction to one-loop order in an ɛ-expansion. We find a new quantum critical point (QCP) strongly affected by Kondo fluctuations. Near this QCP, there is a breakdown of hydrodynamic behavior, and the spin waves are logarithmically frozen out. The renormalization group results allow us to propose a new phase diagram near the antiferromagnetic fixed point of this 2D Kondo lattice model. The T=0 phase diagram contains four phases separated by a tetracritical point, the new QCP. For small spin fluctuations, we find a stable local magnetic moment antiferromagnet. For stronger coupling, region II is a metallic quantum disordered paramagnet. We find in region III a paramagnetic phase driven by Kondo interactions, with possible ground states of a heavy fermion liquid or a Kondo driven spin-liquid. The fourth phase is a spiral phase, or a large-Fermi-surface antiferromagnetic phase. We will describe these phases in more detail, including possible experimental confirmation of the spiral phase. The existence of the tetracritical point found here would be expected to affect the phase diagram at finite temperatures as well. In addition, It is hoped that these results, and particularly the Kondo interaction paramagnetic phase, will serve to bridge to solutions starting from the opposite limit, of a Kondo effect leading to a heavy fermion ground state. Work in collaboration with T. Tzen Ong. [4pt] [1] T. Ong and B. A. Jones, Phys. Rev. Lett. 103, 066405 (2009).

  6. Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

    SciTech Connect

    Vilan, Ayelet

    2016-01-07

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

  7. The success of Fermi gas model for overall scaling of 2D metal-to-insulator transition data

    NASA Astrophysics Data System (ADS)

    Cheremisin, M. V.

    2017-03-01

    The melting condition for two-dimensional Wigner solid (Platzman and Fukuyama, 1974) [14] is shown to contain an error of a factor of π. The analysis of experimental data for apparent 2D metal-to-insulator transition shows that the Wigner solidification (Tanatar and Ceperley, 1989) [16] has been never achieved. Within routine Fermi gas model both the metallic and insulating behavior of different 2D system for actual range of carrier densities and temperatures is explained.

  8. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhan, J. M.; Li, P. G.; Liu, H.; Tao, S. L.; Ma, H.; Shen, J. Q.; Pan, M. J.; Zhang, Z. J.; Wang, S. L.; Yuan, G. L.

    2016-04-01

    La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

  9. Critical exponents of dynamical conductivity in 2D percolative superconductor-insulator transitions: three universality classes

    NASA Astrophysics Data System (ADS)

    Karki, Pragalv; Loh, Yen Lee

    2016-11-01

    We simulate three types of random inductor-capacitor (LC) networks on 6000× 6000 square lattices. We calculate the dynamical conductivity using an equation-of-motion method in which timestep error is eliminated and windowing error is minimized. We extract the critical exponent a such that σ ≤ft(ω \\right)\\propto {ω-a} at low frequencies. The results suggest that there are three different universality classes. The {{L}ij}{{C}i} model, with capacitances from each site to ground, has a  =  0.314(4). The {{L}ij}{{C}ij} model, with capacitances along bonds, has a  =  0. The {{L}ij}{{C}i}{{C}ij} model, with both types of capacitances, has a  =  0.304(1). This implies that classical percolative 2D superconductor-insulator transitions (SITs) generically have σ ≤ft(ω \\right)\\to ∞ as ω \\to 0 . Therefore, any experiments that give a constant conductivity as ω \\to 0 must be explained in terms of quantum effects.

  10. Polymorphic polytypic transition induced in crystals by interaction of spirals and 2D growth mechanisms

    NASA Astrophysics Data System (ADS)

    Aquilano, Dino; Veesler, Stéphane; Astier, Jean Pierre; Pastero, Linda

    2003-01-01

    The relationship between crystal polymorphism and polytypism can be revealed by surface patterns through the interlacing of the growth spirals. Simple high-symmetry structures as SiC, ZnS, CdI2 and more complex low-symmetry layered structures as n-paraffins, n-alcohols and micas are concerned with polymorphic-polytypic transition. In this paper, we will show for the first time, through in situ AFM observations and X-ray diffractometry, that a protein polymorph (P2 12 12 1α-amylase) locally changes, during growth, to a monoclinic P2 1 polytype, thanks to the screw dislocation activity. The interplay between spiral steps and 2D nuclei of the polytypes coexisting in the same crystalline individual allows to foresee the consequences on the crystal quality. The discussion is extended to other mineral and biological molecules and a new general rule is proposed to explain the interactions between surface patterns and the bulk crystal structure.

  11. Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

    DOE PAGES

    Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

    2017-02-17

    Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX2/WX2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxial strain. Basedmore » on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

  12. Lighten the Olympia of the Flatland: Probing and Manipulating the Photonic Properties of 2D Transition-Metal Dichalcogenides.

    PubMed

    Zhou, Kai-Ge; Zhang, Hao-Li

    2015-07-15

    Following the adventures of graphene, 2D transition metal dichalcogenides (TMDs) have recently seized part of the territory in the flatland. Branched by different components of metals and chalcogenides, the families of 2D TMDs have grown rapidly, in which the semiconductive ones have shown colorful photonic properties. By tuning the atomic components and reducing the thickness or planar size of the layers, one can manipulate the optical performance of 2D TMDs, e.g., the intensity, angular momentum, and frequency of the emitted light, or toward ultrafast nonlinear absorption. As a powerful optical method, the Raman characteristics of 2D TMDs have been successfully used to explore their lattices and electronic structures. Along with the maturing of 2D TMDs, their hybrids play an important role. The unique photonic properties of 2D van der Waals heterostructures and 2D alloys are introduced here. Apart from the group VI TMDs, future prospects are identified to harness the optical properties of other 2D TMDs and the related investigations of their hybrids are underway.

  13. Generalized Mechanistic Model for the Chemical Vapor Deposition of 2D Transition Metal Dichalcogenide Monolayers.

    PubMed

    Govind Rajan, Ananth; Warner, Jamie H; Blankschtein, Daniel; Strano, Michael S

    2016-04-26

    Transition metal dichalcogenides (TMDs) like molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are layered materials capable of growth to one monolayer thickness via chemical vapor deposition (CVD). Such CVD methods, while powerful, are notoriously difficult to extend across different reactor types and conditions, with subtle variations often confounding reproducibility, particularly for 2D TMD growth. In this work, we formulate the first generalized TMD synthetic theory by constructing a thermodynamic and kinetic growth mechanism linked to CVD reactor parameters that is predictive of specific geometric shape, size, and aspect ratio from triangular to hexagonal growth, depending on specific CVD reactor conditions. We validate our model using experimental data from Wang et al. (Chem. Mater. 2014, 26, 6371-6379) that demonstrate the systemic evolution of MoS2 morphology down the length of a flow CVD reactor where variations in gas phase concentrations can be accurately estimated using a transport model (CSulfur = 9-965 μmol/m(3); CMoO3 = 15-16 mmol/m(3)) under otherwise isothermal conditions (700 °C). A stochastic model which utilizes a site-dependent activation energy barrier based on the intrinsic TMD bond energies and a series of Evans-Polanyi relations leads to remarkable, quantitative agreement with both shape and size evolution along the reactor. The model is shown to extend to the growth of WS2 at 800 °C and MoS2 under varied process conditions. Finally, a simplified theory is developed to translate the model into a "kinetic phase diagram" of the growth process. The predictive capability of this model and its extension to other TMD systems promise to significantly increase the controlled synthesis of such materials.

  14. Measurements of Thermal Conductivity of Superfluid Helium Near its Transition Temperature T(sub lambda) in a 2D Confinement

    NASA Technical Reports Server (NTRS)

    Jerebets, Sergei

    2004-01-01

    We report our recent experiments on thermal conductivity measurements of superfluid He-4 near its phase transition in a two-dimensional (2D) confinement under saturated vapor pressure. A 2D confinement is created by 2-mm- and 1-mm-thick glass capillary plates, consisting of densely populated parallel microchannels with cross-sections of 5 x 50 and 1 x 10 microns, correspondingly. A heat current (2 < Q < 400 nW/sq cm) was applied along the channels long direction. High-resolution measurements were provided by DC SQUID-based high-resolution paramagnetic salt thermometers (HRTs) with a nanokelvin resolution. We might find that thermal conductivity of confined helium is finite at the bulk superfluid transition temperature. Our 2D results will be compared with those in a bulk and 1D confinement.

  15. Low-voltage current noise in long quantum superconductor/insulator/normal-metal/insulator/superconductor junctions.

    SciTech Connect

    Kopnin, N. B.; Galperin, Y. M.; Vinokur, V.; Materials Science Division; Helsinki Univ. Tech.; L.D. Landau Inst. for Theoretical Physics; Univ. Oslo; A.F. Ioffe Physico-Tech. Inst. of Russian Academy of Sciences

    2007-01-01

    The current noise in long superconductor/insulator/normal-metal/insulator/superconductor junctions at low temperatures is sensitive to the population of the subgap states, which is far from equilibrium even at low bias voltages. A nonequilibrium distribution is established due to an interplay between voltage-driven interlevel Landau-Zener transitions and intralevel inelastic relaxation. The Fano factor (the ratio of the zero-frequency noise to the dc current) is enhanced drastically, being proportional to the number of times which a particle flies along the Andreev trajectory before it escapes from the level due to inelastic scattering. For weak Landau-Zener transitions, the enhancement is even larger due to a smaller dc current.

  16. A search for the rotational transitions of H2D+ at 1370 GHz and H3O+ at 985 GHz

    NASA Technical Reports Server (NTRS)

    Boreiko, R. T.; Betz, A. L.

    1993-01-01

    A search was made for the 1370 GHz lowest rotational transition of the molecular ion H2D+ in NGC 2264, W3, and the IRc2 region of M42. No emission lines were seen, but an absorption feature was detected toward IRc2. The column density and fractional abundance were calculated using a tentative identification of the line as the transition of para H2D+. The LSR velocity and the measured line width are consistent with the dynamical parameters of the hot core source. Physical parameters deduced from the data differ from those derived from millimeter-wave observations of the hot core condensation. It is suggested that significant amounts of low-density gas are associated with this region and that the material is cold enough for enhanced deuterium fractionation to occur. A search was also made for the 985 GHz transition of ortho H3O+ in W3 and IRc2 with negative results.

  17. On the 2D-transition, hysteresis and thermodynamic equilibrium of Kr adsorption on a graphite surface.

    PubMed

    Diao, Rui; Fan, Chunyan; Do, D D; Nicholson, D

    2015-12-15

    The adsorption and desorption of Kr on graphite at temperatures in the range 60-88K, was systematically investigated using a combination of several simulation techniques including: Grand Canonical Monte Carlo (GCMC), Canonical kinetic-Monte Carlo (C-kMC) and the Mid-Density Scheme (MDS). Particular emphasis was placed on the gas-solid, gas-liquid and liquid-solid 2D phase transitions. For temperatures below the bulk triple point, the transition from a 2D-liquid-like monolayer to a 2D-solid-like state is manifested as a sub-step in the isotherm. A further increase in the chemical potential leads to another rearrangement of the 2D-solid-like state from a disordered structure to an ordered structure that is signalled by (1) another sub-step in the monolayer region and (2) a spike in the plot of the isosteric heat versus density at loadings close to the dense monolayer coverage concentration. Whenever a 2D transition occurs in a grand canonical isotherm it is always associated with a hysteresis, a feature that is not widely recognised in the literature. We studied in details this hysteresis with the analysis of the canonical isotherm, obtained with C-kMC, which exhibits a van der Waals (vdW) type loop with a vertical segment in the middle. We complemented the hysteresis loop and the vdW curve with the analysis of the equilibrium transition obtained with the MDS, and found that the equilibrium transition coincides exactly with the vertical segment of the C-kMC isotherm, indicating the co-existence of two phases at equilibrium. We also analysed adsorption at higher layers and found that the 2D-coexistence is also observed, provided that the temperature is well below the triple point. Finally the 2D-critical temperatures were obtained for the first three layers and they are in good agreement with the experimental data in the literature.

  18. Fluid to soft-glass transition in a quasi-2D system: thermodynamic and rheological evidences for a Langmuir monolayer.

    PubMed

    Maestro, Armando; Guzmán, Eduardo; Chuliá, Raquel; Ortega, Francisco; Rubio, Ramón G; Miller, Reinhard

    2011-05-28

    We report an experimental study that points out the existence of a fluid to soft-glass transition in Langmuir polymer monolayers of poly(methyl methacrylate) (PMMA), for which the water/air interface behaves as a poor-solvent. The temperature dependence of surface pressure vs. surface area equilibrium isotherms shows a glass-like transition temperature at T(g,2D)≈ 298 K, significantly lower than the value for bulk PMMA (T(g,bulk)≈ 378 K). The plot of the film thickness h vs. temperature shows a sharp change of slope at about the same temperature, 298 K, which is a typical hallmark of a glass transition in thin polymer films [J. L. Keddie, R. A. L. Jones, R. A. Cory, Europhys. Lett., 1996, 27, 59-64]. Furthermore, slightly above T(g,2D), the temperature dependence of the dilational viscosity does not follow an Arrhenius law, but instead can be described by a Vogel-Fulcher-Tamman equation with parameters that are typical of a fragile glass. Not only the qualitative behavior of three distinct equilibrium and dynamic properties, but also the quantitative agreement of the values of T(g) obtained, are a strong evidence of the existence of a fluid to soft-glass transition in this quasi-2D system.

  19. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

    PubMed

    Yue, Ruoyu; Barton, Adam T; Zhu, Hui; Azcatl, Angelica; Pena, Luis F; Wang, Jian; Peng, Xin; Lu, Ning; Cheng, Lanxia; Addou, Rafik; McDonnell, Stephen; Colombo, Luigi; Hsu, Julia W P; Kim, Jiyoung; Kim, Moon J; Wallace, Robert M; Hinkle, Christopher L

    2015-01-27

    In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates used, followed by flat, 2D layers with octahedral (1T) coordination. The resulting HfSe2 is slightly n-type with an indirect band gap of ∼ 1.1 eV and a measured energy band alignment significantly different from recent DFT calculations. These results demonstrate the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronic and optoelectronic applications.

  20. Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

    SciTech Connect

    Chaudhuri, S.; Maasilta, I. J.

    2014-03-24

    We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

  1. Metal-insulator quantum critical point beneath the high Tc superconducting dome

    PubMed Central

    Sebastian, Suchitra E.; Harrison, N.; Altarawneh, M. M.; Mielke, C. H.; Liang, Ruixing; Bonn, D. A.; Lonzarich, G. G.; Hardy, W. N.

    2010-01-01

    An enduring question in correlated systems concerns whether superconductivity is favored at a quantum critical point (QCP) characterized by a divergent quasiparticle effective mass. Despite such a scenario being widely postulated in high Tc cuprates and invoked to explain non-Fermi liquid transport signatures, experimental evidence is lacking for a critical divergence under the superconducting dome. We use ultrastrong magnetic fields to measure quantum oscillations in underdoped YBa2Cu3O6+x, revealing a dramatic doping-dependent upturn in quasiparticle effective mass at a critical metal-insulator transition beneath the superconducting dome. Given the location of this QCP under a plateau in Tc in addition to a postulated QCP at optimal doping, we discuss the intriguing possibility of two intersecting superconducting subdomes, each centered at a critical Fermi surface instability. PMID:20304800

  2. Tunable color filters based on metal-insulator-metal resonators.

    PubMed

    Diest, Kenneth; Dionne, Jennifer A; Spain, Merrielle; Atwater, Harry A

    2009-07-01

    We report a method for filtering white light into individual colors using metal-insulator-metal resonators. The resonators are designed to support photonic modes at visible frequencies, and dispersion relations are developed for realistic experimental configurations. Experimental results indicate that passive Ag/Si(3)N(4)/Au resonators exhibit color filtering across the entire visible spectrum. Full field electromagnetic simulations were performed on active resonators for which the resonator length was varied from 1-3 microm and the output slit depth was systematically varied throughout the thickness of the dielectric layer. These resonators are shown to filter colors based on interference between the optical modes within the dielectric layer. By careful design of the output coupling, the resonator can selectively couple to intensity maxima of different photonic modes and, as a result, preferentially select any of the primary colors. We also illustrate how refractive index modulation in metal-insulator-metal resonators can yield actively tunable color filters. Simulations using lithium niobate as the dielectric layer and the top and bottom Ag layers as electrodes, indicate that the output color can be tuned over the visible spectrum with an applied field.

  3. Simulation of multi-steps thermal transition in 2D spin-crossover nanoparticles

    NASA Astrophysics Data System (ADS)

    Jureschi, Catalin-Maricel; Pottier, Benjamin-Louis; Linares, Jorge; Richard Dahoo, Pierre; Alayli, Yasser; Rotaru, Aurelian

    2016-04-01

    We have used an Ising like model to study the thermal behavior of a 2D spin crossover (SCO) system embedded in a matrix. The interaction parameter between edge SCO molecules and its local environment was included in the standard Ising like model as an additional term. The influence of the system's size and the ratio between the number of edge molecules and the other molecules were also discussed.

  4. SU-E-T-05: A 2D EPID Transit Dosimetry Model Based On An Empirical Quadratic Formalism

    SciTech Connect

    Tan, Y; Metwaly, M; Glegg, M; Baggarley, S; Elliott, A

    2014-06-01

    Purpose: To describe a 2D electronic portal imaging device (EPID) transit dosimetry model, based on an empirical quadratic formalism, that can predict either EPID or in-phantom dose distribution for comparisons with EPID captured image or treatment planning system (TPS) dose respectively. Methods: A quadratic equation can be used to relate the reduction in intensity of an exit beam to the equivalent path length of the attenuator. The calibration involved deriving coefficients from a set of dose planes measured for homogeneous phantoms with known thicknesses under reference conditions. In this study, calibration dose planes were measured with EPID and ionisation chamber (IC) in water for the same reference beam (6MV, 100mu, 20×20cm{sup 2}) and set of thicknesses (0–30cm). Since the same calibration conditions were used, the EPID and IC measurements can be related through the quadratic equation. Consequently, EPID transit dose can be predicted from TPS exported dose planes and in-phantom dose can be predicted using EPID distribution captured during treatment as an input. The model was tested with 4 open fields, 6 wedge fields, and 7 IMRT fields on homogeneous and heterogeneous phantoms. Comparisons were done using 2D absolute gamma (3%/3mm) and results were validated against measurements with a commercial 2D array device. Results: The gamma pass rates for comparisons between EPID measured and predicted ranged from 93.6% to 100.0% for all fields and phantoms tested. Results from this study agreed with 2D array measurements to within 3.1%. Meanwhile, comparisons in-phantom between TPS computed and predicted ranged from 91.6% to 100.0%. Validation with 2D array device was not possible for inphantom comparisons. Conclusion: A 2D EPID transit dosimetry model for treatment verification was described and proven to be accurate. The model has the advantage of being generic and allows comparisons at the EPID plane as well as multiple planes in-phantom.

  5. Photocurrent measurements in Coupled Quantum Well van der Waals Heterostructures made of 2D Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Joe, Andrew; Jauregui, Luis; High, Alex; Dibos, Alan; Gulpinar, Elgin; Pistunova, Kateryna; Park, Hongkun; Kim, Philip

    , Luis A. Jauregui, Alex A. High, Alan Dibos, Elgin Gulpinar, Kateryna Pistunova, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors van der Waals (vdW) characterized by a direct optical bandgap in the visible wavelength (~2 eV). Characterization of the band alignment between TMDC and the barrier is important for the fabrication of tunneling devices. Here, we fabricate coupled quantum well (CQW) heterostructures made of 2D TMDCs with hexagonal Boron nitride (hBN) as an atomically thin barrier and gate dielectric and with top and bottom metal (or graphite) as gate electrodes. We observe a clear dependence of the photo-generated current with varying hBN thickness, electrode workfunctions, electric field, laser excitation power, excitation wavelength, and temperature. We will discuss the implication of photocurrent in relation to quantum transport process across the vdW interfaces.

  6. Spectroscopic Investigation of the Odd-Parity 3 d 2 D → nf 2 F Transitions of Neutral Sodium

    NASA Astrophysics Data System (ADS)

    Nadeem, A.; Shah, M.; Shahzada, S.; Ahmed, M.; Haq, S. U.

    2015-11-01

    We report new experimental data on term energies and effective quantum numbers of the odd parity Rydberg states of sodium in the 40687-41408 cm-1 energy range. The experiment was performed using a two-color scheme of three-photon laser excitation in conjunction with a thermionic diode ion detector. The new observation includes much extended nf 2 F (12 ≤ n ≤ 51) series excited from the 3 d 2 D intermediate state. In addition, oscillator strengths of the 3 d 2 D → nf 2 F (16 ≤ n ≤ 45) Rydberg transitions have been determined and a complete picture is presented from n = 4-45 incorporating the present work and earlier computed results.

  7. Suppression of the Berezinskii-Kosterlitz-Thouless transition in 2D superconductors by macroscopic quantum tunneling.

    PubMed

    Lin, Yen-Hsiang; Nelson, J; Goldman, A M

    2012-07-06

    The evolution with thickness of the properties of quench-deposited homogeneous amorphous bismuth (a-Bi) thin films with a 14.67 Å amorphous antimony (a-Sb) underlayer has been studied. In contrast with the results of previous investigations on similar systems the transition between the insulating and superconducting regimes is not direct, but involves an intervening metallic regime over a range of thicknesses. For these metallic films the temperature dependencies of the resistances at temperatures above the metallic regime can be described by the Halperin-Nelson form suggesting the occurrence of a Berezinskii-Kosterlitz-Thouless (BKT) transition at lower temperatures. However, this transition never occurs as curves of R(T) flatten out as temperature is reduced. We suggest that this phenomenon is evidence of a crossover between a classical regime of thermal vortex unbinding at high temperatures and a regime of macroscopic quantum tunneling at low temperatures. The latter prevents the BKT transition from occurring.

  8. Melting in 2D Lennard-Jones Systems: What Type of Phase Transition?

    SciTech Connect

    Patashinski, Alexander Z.; Orlik, Rafal; Mitus, Antonio C.; Grzybowski, Bartosz A.; Ratner, Mark A.

    2010-12-09

    A typical configuration of an equilibrium 2D system of 2500 Lennard-Jones particles at melting is found to be a mosaic of crystallites and amorphous clusters. This mosaic significantly changed at times around the period τ of local vibrations, while most particles retain their nearest neighbors for times much longer than τ. In a system of 2500 particles, we found no phase separation for length scales larger than that of a crystallite. With decreasing density, the number of small amorphous clusters increased, and proliferation and percolation of amorphous matter separated the crystalline-ordered parts so that correlations between local order orientations of remote crystallites disappeared. We suggest that the mosaic is a manifestation of diminished stability of the crystalline structure resulting from competition between attraction and repulsion forces.

  9. Cadmium selenide quantum wires and the transition from 3D to 2D confinement.

    PubMed

    Yu, Heng; Li, Jingbo; Loomis, Richard A; Gibbons, Patrick C; Wang, Lin-Wang; Buhro, William E

    2003-12-31

    Soluble CdSe quantum wires are prepared by the solution-liquid-solid mechanism, using monodisperse bismith nanoparticles to catalyze wire growth. The quantum wires have micrometer lengths, diameters in the range of 5-20 nm, and diameter distributions of +/-10-20%. Spectroscopically determined wire band gaps compare closely to those calculated by the semiemipirical pseudopotential method, confirming 2D quantum confinement. The diameter dependence of the quantum wire band gaps is compared to that of CdSe quantum dots and rods. Quantum rod band gaps are shown to be delimited by the band gaps of dots and wires of like diameter, for short and long rods, respectively. The experimental data suggest that a length of ca. 30 nm is required for the third dimension of quantum confinement to fully vanish in CdSe rods. That length is about six times the bulk CdSe exciton Bohr radius.

  10. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-08

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

  11. Dynamic Linkages Between the Transition Zone & Surface Plate Motions in 2D Models of Subduction

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2013-12-01

    While slab pull is considered the dominant force controlling plate motion and speed, its magnitude is controlled by slab behavior in the mantle, where tomographic studies show a wide range of possibilities from direct penetration to folding, or stagnation directly above the lower mantle (e.g. Fukao et al., 2009). Geodynamic studies have investigated various parameters, such as plate age and two phase transitions, to recreate observed behavior (e.g. Běhounková and Cízková, 2008). However, past geodynamic models have left out known slab characteristics that may have a large impact on slab behavior and our understanding of subduction processes. Mineral experiments and seismic observations have indicated the existence of additional phase transitions in the mantle transition zone that may produce buoyancy forces large enough to affect the descent of a subducting slab (e.g. Ricard et al., 2005). The current study systematically tests different common assumptions used in geodynamic models: kinematic versus free-slip boundary conditions, the effects of adiabatic heating, viscous dissipation and latent heat, compositional layering and a more complete suite of phase transitions. Final models have a complete energy equation, with eclogite, harzburgite and pyrolite lithosphere compositional layers, and seven composition-dependent phase transitions within the olivine, pyroxene and garnet polymorph minerals. Results show important feedback loops between different assumptions and new behavior from the most complete models. Kinematic models show slab weakening or breaking above the 660 km boundary and between compositional layers. The behavior in dynamic models with a free-moving trench and overriding plate is compared to the more commonly found kinematic models. The new behavior may have important implications for the depth distribution of deep earthquakes within the slab. Though the thermodynamic parameters of certain phase transitions may be uncertain, their presence and

  12. Theoretical study of surface plasmons coupling in transition metallic alloy 2D binary grating

    NASA Astrophysics Data System (ADS)

    Dhibi, Abdelhak; Khemiri, Mehdi; Oumezzine, Mohamed

    2016-05-01

    The excitation of a surface plasmon polariton (SPP) wave on a metal-air interface by a 2D diffraction grating is numerically investigated. The grating consists of homogeneous alloys of two metals of a formula AxB1-x, or three metals of a formula AxByCz, where A, B and C could be silver (Ag), copper (Cu), gold (Au) or aluminum (Al). It is observed that all the alloys of two metals present a very small change of surface plasmon resonance (SPR) irrespective of composition x. Moreover, the addition of 25% of Al to two metals alloy is insufficient to change the SPR curves. The influence of the different grating parameters is discussed in details using rigorous coupled-wave analysis (RCWA) method. Furthermore, the SPR is highly dependent on grating periods (dx and dy) and the height of the grating h. The results reveal that dx= dy= 700 nm, h=40 nm and duty cycle w=0.5 are the optimal parameters for exciting SPP.

  13. Anderson Transition of Cold Atoms with Synthetic Spin-Orbit Coupling in Two-Dimensional Speckle Potentials

    NASA Astrophysics Data System (ADS)

    Orso, Giuliano

    2017-03-01

    We investigate the metal-insulator transition occurring in two-dimensional (2D) systems of noninteracting atoms in the presence of artificial spin-orbit interactions and a spatially correlated disorder generated by laser speckles. Based on a high order discretization scheme, we calculate the precise position of the mobility edge and verify that the transition belongs to the symplectic universality class. We show that the mobility edge depends strongly on the mixing angle between Rashba and Dresselhaus spin-orbit couplings. For equal couplings a non-power-law divergence is found, signaling the crossing to the orthogonal class, where such a 2D transition is forbidden.

  14. Edge effect and significant increase of the superconducting transition onset temperature of 2D superconductors in flat and curved geometries

    NASA Astrophysics Data System (ADS)

    Wong, Chi Ho; Lortz, Rolf

    2016-02-01

    In this paper, we present a simple method to model the curvature activated phonon softening in a 2D superconducting layer. The superconducting transition temperature Tc in the case of a 2D rectangular sheet, a hollow cylinder and a hollow sphere of one coherence length thickness is calculated by the quantum mechanical electron-phonon scattering matrix, and a series of collective lattice vibrations in the surface state. We will show that being extremely thin in a flat rectangular shape is not enough to significantly enhance the Tc through phonon softening. However, if a curvature is added, Tc can be strongly enhanced. The increase in Tc with respect to the bulk is greatest in a hollow sphere, intermediate in a hollow cylinder and weakest for the rectangular sheet, when systems of identical length scale are considered. In addition, we find that the edge effect of such a 2D sheet has a strong broadening effect on Tc in addition to the effect of order parameter phase fluctuations.

  15. Using economy of means to evolve transition rules within 2D cellular automata.

    PubMed

    Ripps, David L

    2010-01-01

    Running a cellular automaton (CA) on a rectangular lattice is a time-honored method for studying artificial life on a digital computer. Commonly, the researcher wishes to investigate some specific or general mode of behavior, say, the ability of a coherent pattern of points to glide within the lattice, or to generate copies of itself. This technique has a problem: how to design the transitions table-the set of distinct rules that specify the next content of a cell from its current content and that of its near neighbors. Often the table is painstakingly designed manually, rule by rule. The problem is exacerbated by the potentially vast number of individual rules that need be specified to cover all combinations of center and neighbors when there are several symbols in the alphabet of the CA. In this article a method is presented to have the set of rules evolve automatically while running the CA. The transition table is initially empty, with rules being added as the need arises. A novel principle drives the evolution: maximum economy of means-maximizing the reuse of rules introduced on previous cycles. This method may not be a panacea applicable to all CA studies. Nevertheless, it is sufficiently potent to evolve sets of rules and associated patterns of points that glide (periodically regenerate themselves at another location) and to generate gliding "children" that then "mate" by collision.

  16. Dynamically Tuning Particle Interactions and Assemblies at Soft Interfaces: Reversible Order-Disorder Transitions in 2D Particle Monolayers.

    PubMed

    Park, Bum Jun; Lee, Daeyeon

    2015-09-16

    Particles trapped at fluid interfaces experience long-range interactions that determine their assembly behavior. Because particle interactions at fluid interfaces tend to be unusually strong, once particles organize themselves into a 2D assembly, it is challenging to induce changes in their microstructure. In this report, a new approach is presented to induce reversible order-disorder transitions (ODTs) in the 2D monolayer of colloidal particles trapped at a soft gel-fluid interface. Particles at the soft interface, consisting of a nonpolar superphase and a weakly gelled subphase, initially form a monolayer with a highly ordered structure. The structure of this monolayer can be dynamically varied by the addition or removal of the oil phase. Upon removing the oil via evaporation, the initially ordered particle monolayer undergoes ODT, driven by capillary attractions. The ordered monolayer can be recovered through disorder-to-order transition by simply adding oil atop the particle-laden soft interface. The possibility to dynamically tune the interparticle interactions using soft interfaces can potentially enable control of the transport and mechanical properties of particle-laden interfaces and provide model systems to study particle-laden soft interfaces that are relevant to biological tissues or organs.

  17. Droplet growth during vapor-liquid transition in a 2D Lennard-Jones fluid.

    PubMed

    Midya, Jiarul; Das, Subir K

    2017-01-14

    Results for the kinetics of vapor-liquid phase transition have been presented from the molecular dynamics simulations of a single component two-dimensional Lennard-Jones fluid. The phase diagram for the model, primary prerequisite for this purpose, has been obtained via the Monte Carlo simulations. Our focus is on the region very close to the vapor branch of the coexistence curve. Quenches to such region provide morphology that consists of disconnected circular clusters in the vapor background. We identified that these clusters exhibit diffusive motion and grow via sticky collisions among them. The growth follows power-law behavior with time, exponent of which is found to be in nice agreement with a theoretical prediction.

  18. Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides.

    PubMed

    Xie, Lu; Cui, Xiaodong

    2016-04-05

    Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin-valley locking in monolayer WS2, and electrically detected by a lateral spin-valve structure with ferromagnetic contacts. The demonstrated long spin-valley lifetime, the unique valley-contrasted physics, and the spin-valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics.

  19. Droplet growth during vapor-liquid transition in a 2D Lennard-Jones fluid

    NASA Astrophysics Data System (ADS)

    Midya, Jiarul; Das, Subir K.

    2017-01-01

    Results for the kinetics of vapor-liquid phase transition have been presented from the molecular dynamics simulations of a single component two-dimensional Lennard-Jones fluid. The phase diagram for the model, primary prerequisite for this purpose, has been obtained via the Monte Carlo simulations. Our focus is on the region very close to the vapor branch of the coexistence curve. Quenches to such region provide morphology that consists of disconnected circular clusters in the vapor background. We identified that these clusters exhibit diffusive motion and grow via sticky collisions among them. The growth follows power-law behavior with time, exponent of which is found to be in nice agreement with a theoretical prediction.

  20. Flow transition with 2-D roughness elements in a 3-D channel

    NASA Technical Reports Server (NTRS)

    Liu, Zhining; Liu, Chaoquin; Mccormick, Stephen F.

    1993-01-01

    We develop a new numerical approach to study the spatially evolving instability of the streamwise dominant flow in the presence of roughness elements. The difficulty in handling the flow over the boundary surface with general geometry is removed by using a new conservative form of the governing equations and an analytical mapping. The numerical scheme uses second-order backward Euler in time, fourth-order central differences in all three spatial directions, and boundary-fitted staggered grids. A three-dimensional channel with multiple two-dimensional-type roughness elements is employed as the test case. Fourier analysis is used to decompose different Fourier modes of the disturbance. The results show that surface roughness leads to transition at lower Reynolds number than for smooth channels.

  1. Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides

    PubMed Central

    Xie, Lu; Cui, Xiaodong

    2016-01-01

    Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin–valley locking in monolayer WS2, and electrically detected by a lateral spin–valve structure with ferromagnetic contacts. The demonstrated long spin–valley lifetime, the unique valley-contrasted physics, and the spin–valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics. PMID:27001834

  2. Robustness of reduced-order observer-based controllers in transitional 2D Blasius boundary layers

    NASA Astrophysics Data System (ADS)

    Belson, Brandt; Semeraro, Onofrio; Rowley, Clarence; Pralits, Jan; Henningson, Dan

    2011-11-01

    In this work, we seek to delay transition in the Blasius boundary layer. We trip the flow with an upstream disturbance and dampen the growth of the resulting structures downstream. The observer-based controllers use a single sensor and a single localized body force near the wall. To formulate the controllers, we first find a reduced-order model of the system via the Eigensystem Realization Algorithm (ERA), then find the H2 optimal controller for this reduced-order system. We find the resulting controllers are effective only when the sensor is upstream of the actuator (in a feedforward configuration), but as is expected, are sensitive to model uncertainty. When the sensor is downstream of the actuator (in a feedback configuration), the reduced-order observer-based controllers are not robust and ineffective on the full system. In order to investigate the robustness properties of the system, an iterative technique called the adjoint of the direct adjoint (ADA) is employed to find a full-dimensional H2 optimal controller. This avoids the reduced-order modelling step and serves as a reference point. ADA is promising for investigating the lack of robustness previously mentioned.

  3. Probing Magnetism in 2D Molecular Networks after in Situ Metalation by Transition Metal Atoms.

    PubMed

    Schouteden, K; Ivanova, Ts; Li, Z; Iancu, V; Janssens, E; Van Haesendonck, C

    2015-03-19

    Metalated molecules are the ideal building blocks for the bottom-up fabrication of, e.g., two-dimensional arrays of magnetic particles for spintronics applications. Compared to chemical synthesis, metalation after network formation by an atom beam can yield a higher degree of control and flexibility and allows for mixing of different types of magnetic atoms. We report on successful metalation of tetrapyridyl-porphyrins (TPyP) by Co and Cr atoms, as demonstrated by scanning tunneling microscopy experiments. For the metalation, large periodic networks formed by the TPyP molecules on a Ag(111) substrate are exposed in situ to an atom beam. Voltage-induced dehydrogenation experiments support the conclusion that the porphyrin macrocycle of the TPyP molecule incorporates one transition metal atom. The newly synthesized Co-TPyP and Cr-TPyP complexes exhibit striking differences in their electronic behavior, leading to a magnetic character for Cr-TPyP only as evidenced by Kondo resonance measurements.

  4. A novel 2-D transition metal cyanide membrane: Modeling, structural, magnetic, and functional characterization

    NASA Astrophysics Data System (ADS)

    Goss, Marcus

    A novel 2-dimensional crystalline material composed of cyanide-bridged metal nanosheets with a square planar framework has been prepared. This material, similar to Hofmann clathrates, has a variety of interesting properties. The material is crystalline and possesses characteristics that include magnetic properties, electronic properties and useful structural features. They have recently been exfoliated into individual crystalline sheets. These sheets show a strong potential for use as ion selective membranes. Performance improvements in water purification and desalination by reverse osmosis methods owing to their single atom thickness is possible. A series of dynamic molecular simulations has provided an understanding of the mechanism for water permeability and salt rejection. Energy profiles for the passage of water and ionic species through the porous areas of these nanosheets have been built and reported. Performance estimates of the efficacy of this novel material for use as an ion selective membrane such as an improved desalination RO membrane are presented. Experiments in synthesis and exfoliation of this class of cyanide-bridged transition metal complex were conducted and the results are presented. A preliminary investigation into the magnetic properties of these materials is included.

  5. Four divalent transition metal carboxyarylphosphonate compounds: Hydrothermal synthesis, structural chemistry and generalized 2D FTIR correlation spectroscopy studies

    SciTech Connect

    Lei Ran; Chai Xiaochuan; Mei Hongxin; Zhang Hanhui; Chen Yiping; Sun Yanqiong

    2010-07-15

    Four divalent transition metal carboxyarylphosphonates, [Ni(4,4'-bipy)H{sub 2}L{sup 1}(HL{sup 1}){sub 2}(H{sub 2}O){sub 2}].2H{sub 2}O 1, [Ni{sub 2}(4,4'-bipy)(L{sup 2})(OH)(H{sub 2}O){sub 2}].3H{sub 2}O 2, Mn(phen){sub 2}(H{sub 2}L{sup 1}){sub 2}3 and Mn(phen)(HL{sup 2}) 4 (H{sub 3}L{sup 1}=p-H{sub 2}O{sub 3}PCH{sub 2}-C{sub 6}H{sub 4}-COOH, H{sub 3}L{sup 2}=m-H{sub 2}O{sub 3}PCH{sub 2}-C{sub 6}H{sub 4}-COOH, 4,4'-bipy=4,4'-bipyridine, phen=1,10-phenanthroline) were synthesized under hydrothermal conditions. 1 features 1D linear chains built from Ni(II) ions bridging 4,4'-bipy. In 2, neighboring Ni{sub 4} cluster units are connected by pairs of H{sub 3}L{sup 2} ligands to form 1D double-crankshaft chains, which are interconnected by pairs of 4,4'-bipy into 2D sheets. 3 exhibits 2D supramolecular layers via the R{sub 2}{sup 2}(8) ringed hydrogen bonding units. 4 has 1D ladderlike chains, in which the 4-membered rings are cross-linked by the organic moieties of the H{sub 3}L{sup 2} ligands. Additionally, 2D FTIR correlation analysis is applied with thermal and magnetic perturbation to clarify the structural changes of functional groups from H{sub 3}L{sup 1} and H{sub 3}L{sup 2} ligands in the compounds more efficiently. - Graphical abstract: A series of divalent transition metal carboxyarylphosphonate compounds were synthesized under hydrothermal conditions. The figure displays 2D sheet structure with large windows in compound 2.

  6. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  7. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGES

    Yi, Hee Taek; Gao, Bin; Xie, Wei; ...

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  8. Optical properties of non-dilute metal insulator composites

    NASA Astrophysics Data System (ADS)

    Tuncer, Enis; Niklasson, Gunnar A.

    2008-09-01

    The description of the optical properties of metal-insulator composites in the non-dilute region is a long standing problem. In this letter we extract the spectral density function of cobalt-amorphous aluminum oxide composites from optical and near-infrared data. The spectral functions are accurately computed numerically with the help of a recently developed technique. It is observed that the spectral features of the prepared composites change with increasing cobalt content. For low concentrations of cobalt, only one depolarization peak is found that corresponds to the Maxwell Garnett approximation. For concentrations higher than 11% cobalt, three effective depolarization factors are resolved that move towards low spectral parameter values with increasing cobalt content. Such a multi-peak structure arises naturally in fractal equivalent circuit models for the optical properties. A comparison with a deterministic fractal model is presented to illustrate the strength of the spectral density representation and to better comprehend our results. We conclude that the observed behavior gives important information on the relation of the optical characteristics to the composite micro-structure.

  9. Optical transmission theory for metal-insulator-metal periodic nanostructures

    NASA Astrophysics Data System (ADS)

    Blanchard-Dionne, Andre-Pierre; Meunier, Michel

    2017-01-01

    A semi-analytical formalism for the optical properties of a metal-insulator-metal periodic nanostructure using coupled-mode theory is presented. This structure consists in a dielectric layer in between two metallic layers with periodic one-dimensional nanoslit corrugation. The model is developed using multiple-scattering formalism, which defines transmission and reflection coefficients for each of the interface as a semi-infinite medium. Total transmission is then calculated using a summation of the multiple paths of light inside the structure. This method allows finding an exact solution for the transmission problem in every dimension regime, as long as a sufficient number of diffraction orders and guided modes are considered for the structure. The resonant modes of the structure are found to be related to the metallic slab only and to a combination of both the metallic slab and dielectric layer. This model also allows describing the resonant behavior of the system in the limit of a small dielectric layer, for which discontinuities in the dispersion curves are found. These discontinuities result from the out-of-phase interference of the different diffraction orders of the system, which account for field interaction for both inner interfaces of the structure.

  10. Optical transmission theory for metal-insulator-metal periodic nanostructures

    NASA Astrophysics Data System (ADS)

    Blanchard-Dionne, Andre-Pierre; Meunier, Michel

    2016-11-01

    A semi-analytical formalism for the optical properties of a metal-insulator-metal periodic nanostructure using coupled-mode theory is presented. This structure consists in a dielectric layer in between two metallic layers with periodic one-dimensional nanoslit corrugation. The model is developed using multiple-scattering formalism, which defines transmission and reflection coefficients for each of the interface as a semi-infinite medium. Total transmission is then calculated using a summation of the multiple paths of light inside the structure. This method allows finding an exact solution for the transmission problem in every dimension regime, as long as a sufficient number of diffraction orders and guided modes are considered for the structure. The resonant modes of the structure are found to be related to the metallic slab only and to a combination of both the metallic slab and dielectric layer. This model also allows describing the resonant behavior of the system in the limit of a small dielectric layer, for which discontinuities in the dispersion curves are found. These discontinuities result from the out-of-phase interference of the different diffraction orders of the system, which account for field interaction for both inner interfaces of the structure.

  11. Metal-Insulator Photocathode Heterojunction for Directed Electron Emission

    SciTech Connect

    Droubay, Timothy C.; Chambers, Scott A.; Joly, Alan G.; Hess, Wayne P.; Nemeth, Karoly; Harkay, Katherine C.; Spentzouris, Linda

    2014-02-14

    New photocathode materials capable of producing intense and directed electron pulses are needed for development of next generation light sources and dynamic transmission electron microscopy. Ideal photocathodes should have high photoemission quantum efficiency (QE) and be capable of delivering collimated and well-shaped pulses of consistent charge under high-field operating conditions. High-brightness and low-intrinsic emittance electron pulses have been predicted for hybrid metal-insulator photocathode designs constructed from three to four monolayer MgO films on atomically flat silver. Here we use angle-resolved photoelectron spectroscopy to confirm directional photoemission and a large increase in QE under ultraviolet laser excitation of an ultrathin MgO film on Ag(001). We observe new low-binding energy photoemission, not seen for Ag(001), and greater electron emission in the normal direction. Under 4.66 eV laser excitation, the photoemission quantum efficiency of the MgO/Ag(001) hybrid photocathode is a factor of seven greater than that for clean Ag(001).

  12. Reconfiguration of a flexible fiber immersed in a 2D dense granular flow close to the jamming transition

    NASA Astrophysics Data System (ADS)

    Kolb, Evelyne; Algarra, Nicolas; Vandembroucq, Damien; Lazarus, Arnaud

    2015-11-01

    We propose a new fluid/structure interaction in the unusual case of a dense granular medium flowing against an elastic fibre acting as a flexible intruder. We experimentally studied the deflection of a mylar flexible beam clamped at one side, the other free side facing a 2D granular flow in a horizontal cell moving at a constant velocity. We investigated the reconfiguration of the fibre as a function of the fibre's rigidity and of the granular packing fraction close but below the jamming in 2D. Imposing the fibre geometry like its length or thickness sets the critical buckling force the fibre is able to resist if it was not supported by lateral grains, while increasing the granular packing fraction might laterally consolidate the fibre and prevent it from buckling. But on the other side, the approach to jamming transition by increasing the granular packing fraction will be characterized by a dramatically increasing size of the cluster of connected grains forming a solid block acting against the fibre, which might promote the fibre's deflection. Thus, we investigated the granular flow fields, the fibre's deflexion as well as the forces experienced by the fibre and compared them with theoretical predictions from elastica for different loadings along the fibre. PMMH, CNRS UMR 7636, UPMC, ESPCI-ParisTech, 10 rue Vauquelin, 75231 Paris Cedex 05, France.

  13. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces

    NASA Astrophysics Data System (ADS)

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-12-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems.

  14. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces

    PubMed Central

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-01-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems. PMID:26658474

  15. Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams.

    PubMed

    Favaloro, Tela; Suh, Joonki; Vermeersch, Bjorn; Liu, Kai; Gu, Yijia; Chen, Long-Qing; Wang, Kevin X; Wu, Junqiao; Shakouri, Ali

    2014-05-14

    The metal to insulator transition (MIT) of strongly correlated materials is subject to strong lattice coupling, which brings about the unique one-dimensional alignment of metal-insulator (M-I) domains along nanowires or nanobeams. Many studies have investigated the effects of stress on the MIT and hence the phase boundary, but few have directly examined the temperature profile across the metal-insulating interface. Here, we use thermoreflectance microscopy to create two-dimensional temperature maps of single-crystalline VO2 nanobeams under external bias in the phase coexisting regime. We directly observe highly localized alternating Peltier heating and cooling as well as Joule heating concentrated at the M-I domain boundaries, indicating the significance of the domain walls and band offsets. Utilizing the thermoreflectance technique, we are able to elucidate strain accumulation along the nanobeam and distinguish between two insulating phases of VO2 through detection of the opposite polarity of their respective thermoreflectance coefficients. Microelasticity theory was employed to predict favorable domain wall configurations, confirming the monoclinic phase identification.

  16. Deep-level spectroscopy in metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Kurtz, A.; Muñoz, E.; Chauveau, J. M.; Hierro, A.

    2017-02-01

    In this study we present a method for measuring bulk traps using deep-level spectroscopy techniques in metal-insulator-semiconductor (MIS) structures. We will focus on deep-level transient spectroscopy (DLTS), although this can be extended to deep-level optical spectroscopy (DLOS) and similar techniques. These methods require the modulation of a depletion region either from a Schottky junction or from a highly asymmetric p-n junction, junctions that may not be realizable in many current material systems. This is the case of wide-bandgap semiconductor families that present a doping asymmetry or have a high residual carrier concentration or surface carrier accumulation, such as InGaN or ZnO. By adding a thin insulating layer and forming an MIS structure this problem can be circumvented and DLTS/DLOS can be performed under certain conditions. A model for the measurement of bulk traps in MIS structures is thus presented, focusing on the similarities with standard DLTS, maintaining when possible links to existing knowledge on DLTS and related techniques. The model will be presented from an equivalent circuit point of view. The effect of the insulating layer on DLTS is evaluated by a combination of simulations and experiments, developing methods for the measurement of these type of devices. As a validation, highly doped ZnO:Ga MIS devices have been successfully characterized and compared with a reference undoped sample using the methods described in this work, obtaining the same intrinsic levels previously reported in the literature but in material doped as high as 1× {{10}18} cm-3.

  17. Butterfly magnetoresistance, quasi-2D Dirac Fermi surface and topological phase transition in ZrSiS.

    PubMed

    Ali, Mazhar N; Schoop, Leslie M; Garg, Chirag; Lippmann, Judith M; Lara, Erik; Lotsch, Bettina; Parkin, Stuart S P

    2016-12-01

    Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. We report the observation of an unusual "butterfly"-shaped titanic angular magnetoresistance (AMR) in the nonmagnetic Dirac material, ZrSiS, which we find to be the most conducting sulfide known, with a 2-K resistivity as low as 48(4) nΩ⋅cm. The MR in ZrSiS is large and positive, reaching nearly 1.8 × 10(5) percent at 9 T and 2 K at a 45° angle between the applied current (I || a) and the applied field (90° is H || c). Approaching 90°, a "dip" is seen in the AMR, which, by analyzing Shubnikov de Haas oscillations at different angles, we find to coincide with a very sharp topological phase transition unlike any seen in other known Dirac/Weyl materials. We find that ZrSiS has a combination of two-dimensional (2D) and 3D Dirac pockets comprising its Fermi surface and that the combination of high-mobility carriers and multiple pockets in ZrSiS allows for large property changes to occur as a function of angle between applied fields. This makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons as well as opens the door to creating devices focused on switching between different parts of the Fermi surface and different topological states.

  18. Butterfly magnetoresistance, quasi-2D Dirac Fermi surface and topological phase transition in ZrSiS

    PubMed Central

    Ali, Mazhar N.; Schoop, Leslie M.; Garg, Chirag; Lippmann, Judith M.; Lara, Erik; Lotsch, Bettina; Parkin, Stuart S. P.

    2016-01-01

    Magnetoresistance (MR), the change of a material’s electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. We report the observation of an unusual “butterfly”-shaped titanic angular magnetoresistance (AMR) in the nonmagnetic Dirac material, ZrSiS, which we find to be the most conducting sulfide known, with a 2-K resistivity as low as 48(4) nΩ⋅cm. The MR in ZrSiS is large and positive, reaching nearly 1.8 × 105 percent at 9 T and 2 K at a 45° angle between the applied current (I || a) and the applied field (90° is H || c). Approaching 90°, a “dip” is seen in the AMR, which, by analyzing Shubnikov de Haas oscillations at different angles, we find to coincide with a very sharp topological phase transition unlike any seen in other known Dirac/Weyl materials. We find that ZrSiS has a combination of two-dimensional (2D) and 3D Dirac pockets comprising its Fermi surface and that the combination of high-mobility carriers and multiple pockets in ZrSiS allows for large property changes to occur as a function of angle between applied fields. This makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons as well as opens the door to creating devices focused on switching between different parts of the Fermi surface and different topological states. PMID:28028541

  19. Nano-optical investigations of the metal-insulator phase behavior of individual VO(2) microcrystals.

    PubMed

    Jones, Andrew C; Berweger, Samuel; Wei, Jiang; Cobden, David; Raschke, Markus B

    2010-05-12

    Despite the relatively simple stoichiometry and structure of VO(2), many questions regarding the nature of its famous metal-insulator transition (MIT) remain unresolved. This is in part due to the prevailing use of polycrystalline film samples and the limited spatial resolution in most studies, hindering access to and control of the complex phase behavior and its inevitable spatial inhomogeneities. Here, we investigate the MIT and associated nanodomain formation in individual VO(2) microcrystals subject to substrate stress. We employ symmetry-selective polarization Raman spectroscopy to identify crystals that are strain-stabilized in either the monoclinic M1 or M2 insulating phase at room-temperature. Raman measurements are further used to characterize the phase dependence on temperature, identifying the appearance of the M2 phase during the MIT. The associated formation and spatial evolution of rutile (R) metallic domains is studied with nanometer-scale spatial resolution using infrared scattering-scanning near-field optical microscopy (s-SNOM). We deduce that even for small crystals of VO(2), the MIT is influenced by the competition between the R, M1, and M2 crystal phases with their different lattice constants subjected to the external substrate-induced stress. The results have important implications for the interpretation of the investigations of conventional polycrystalline thin films where the mutual interaction of constituent crystallites may affect the nature of the MIT in VO(2).

  20. Transition probabilities for the Au ((2)S, (2)D, and (2)P) with SiH(4) reaction.

    PubMed

    Pacheco-Sánchez, J H; Luna-García, H M; García-Cruz, L M; Novaro, O

    2010-01-28

    Transition probabilities on the interaction of the ground and the lowest excited states of gold Au ((2)S:5d(10)6s(1), (2)D:5d(9)6s(2), and (2)P:5d(10)6p(1)) with silane (SiH(4)) are studied through ab initio Hartree-Fock self-consistent field calculations, where the atom's core is represented by relativistic effective core potentials. These calculations are followed by a multiconfigurational self-consistent field study. The correlation energy is accounted for through extensive variational and perturbative second order multireference Moller-Plesset configuration interaction analysis of selected perturbations obtained by iterative process calculations using the CIPSI program package. It is found that the Au atom in the ((2)P:5d(10)6p(1)) state inserts in the Si-H bond. In this interaction its corresponding D (2)A(') potential energy surface is initially attractive and only becomes repulsive after encountering an avoided crossing with the initially repulsive C (2)A(') surface linked to the Au((2)D:5d(9)6s(2))-SiH(4) fragments. The A, B, and C (2)A(') curves derived from the Au((2)D:5d(9)6s(2)) atom interaction with silane are initially repulsive, each one of them showing two avoided crossings, while the A (2)A(') curve goes sharply downwards until it meets the X (2)A(') curve interacting adiabatically, which is linked with the Au((2)S:5d(10)6s(1))-SiH(4) moieties. The A (2)A(') curve becomes repulsive after the avoided crossing with the X (2)A('), curve. The lowest-lying X (2)A(') potential leads to the HAuSiH(3) X (2)A(') intermediate molecule. This intermediate molecule, diabatically correlated with the Au((2)P:5d(10)6p(1))+SiH(4) system which lies 3.34 kcal/mol above the ground state reactants, has been carefully characterized as have the dissociation channels leading to the AuH+SiH(3) and H+AuSiH(3) products. These products are reached from the HAuSiH(3) intermediate without any activation barrier. The Au-SiH(4) calculation results are successfully compared to

  1. Enhanced photon absorption in spiral nanostructured solar cells using layered 2D materials.

    PubMed

    Tahersima, Mohammad H; Sorger, Volker J

    2015-08-28

    Recent investigations of semiconducting two-dimensional (2D) transition metal dichalcogenides have provided evidence for strong light absorption relative to its thickness attributed to high density of states. Stacking a combination of metallic, insulating, and semiconducting 2D materials enables functional devices with atomic thicknesses. While photovoltaic cells based on 2D materials have been demonstrated, the reported absorption is still just a few percent of the incident light due to their sub-wavelength thickness leading to low cell efficiencies. Here we show that taking advantage of the mechanical flexibility of 2D materials by rolling a molybdenum disulfide (MoS(2))/graphene (Gr)/hexagonal boron nitride stack to a spiral solar cell allows for optical absorption up to 90%. The optical absorption of a 1 μm long hetero-material spiral cell consisting of the aforementioned hetero stack is about 50% stronger compared to a planar MoS(2) cell of the same thickness; although the volumetric absorbing material ratio is only 6%. A core-shell structure exhibits enhanced absorption and pronounced absorption peaks with respect to a spiral structure without metallic contacts. We anticipate these results to provide guidance for photonic structures that take advantage of the unique properties of 2D materials in solar energy conversion applications.

  2. Evolution of 2D Visible and VUV Divertor Emission Profiles During DIII-D H-MODE Detachment Transitions

    NASA Astrophysics Data System (ADS)

    Fenstermacher, M. E.; Jalufka, N.; Meyer, W. H.; Nilson, D. G.; Gafert, J.

    1999-07-01

    The peak heat flux to divertor target surfaces (Pdiv) must be reduced, compared with present experimental levels, before a tokamak operating in the high confinement regime (H-mode) can be extrapolated to a reactor. Partially Detached Divertor (PDD) operation (1), in which deuterium gas is injected into an H-mode plasma, reduces Pdiv by factors of 3-5 in DIII-D. A key element in the physics model of PDD operation is that carbon radiation near the X-point dissipates the energy flowing in the scrape-off-layer (SOL) before it enters the divertor (2). This allows the divertor temperature to be low, density to be high and thereby reduces the heat flux and ion particle flux to the targets both by reduced recycling and increased recombination. Previous line integrated SPRED measurements (3) and computer simulations indicated that the 155 nm (Delta)n = 0 transition of C3+ was the main power radiator from carbon during PDD operation. This paper presents the first 2D profiles of 155 nm CIV emission in any tokamak divertor. The images were obtained on DIII-D with a new tangentially viewing VUV camera (4) and established image reconstruction techniques (5). The discharges were lower single null configurations with, I p = 1.75 MA, BT = 2.1 (Tau), q95 = 3.2, Pinj = 9 MW, (kappa) = 1.9 and the (nabla)B drift toward the lower divertor. After establishing an ELMing H-mode with neutral beam injection, deuterium gas was injected at 17 Pa m3/s (130 T (ell)/s) to increase the divertor density and produce a transition to PDD operation. A practical discharge scenario is given in Ref. (2).

  3. Vibrational density of states and thermodynamics at the nanoscale: the 3D-2D transition in gold nanostructures.

    PubMed

    Carles, R; Benzo, P; Pécassou, B; Bonafos, C

    2016-12-16

    Surface enhanced Raman scattering (SERS) is generally and widely used to enhance the vibrational fingerprint of molecules located at the vicinity of noble metal nanoparticles. In this work, SERS is originally used to enhance the own vibrational density of states (VDOS) of nude and isolated gold nanoparticles. This offers the opportunity of analyzing finite size effects on the lattice dynamics which remains unattainable with conventional techniques based on neutron or x-ray inelastic scattering. By reducing the size down to few nanometers, the role of surface atoms versus volume atoms become dominant, and the "text-book" 3D-2D transition on the dynamical behavior is experimentally emphasized. "Anomalies" that have been predicted by a large panel of simulations at the atomic scale, are really observed, like the enhancement of the VDOS at low frequencies or the occurrence of localized modes at frequencies beyond the cut-off in bulk. Consequences on the thermodynamic properties at the nanoscale, like the reduction of the Debye temperature or the excess of the specific heat, have been evaluated. Finally the high sensitivity of reminiscent bulk-like phonons on the arrangements at the atomic scale is used to access the morphology and internal disorder of the nanoparticles.

  4. Vibrational density of states and thermodynamics at the nanoscale: the 3D-2D transition in gold nanostructures

    NASA Astrophysics Data System (ADS)

    Carles, R.; Benzo, P.; Pécassou, B.; Bonafos, C.

    2016-12-01

    Surface enhanced Raman scattering (SERS) is generally and widely used to enhance the vibrational fingerprint of molecules located at the vicinity of noble metal nanoparticles. In this work, SERS is originally used to enhance the own vibrational density of states (VDOS) of nude and isolated gold nanoparticles. This offers the opportunity of analyzing finite size effects on the lattice dynamics which remains unattainable with conventional techniques based on neutron or x-ray inelastic scattering. By reducing the size down to few nanometers, the role of surface atoms versus volume atoms become dominant, and the “text-book” 3D-2D transition on the dynamical behavior is experimentally emphasized. “Anomalies” that have been predicted by a large panel of simulations at the atomic scale, are really observed, like the enhancement of the VDOS at low frequencies or the occurrence of localized modes at frequencies beyond the cut-off in bulk. Consequences on the thermodynamic properties at the nanoscale, like the reduction of the Debye temperature or the excess of the specific heat, have been evaluated. Finally the high sensitivity of reminiscent bulk-like phonons on the arrangements at the atomic scale is used to access the morphology and internal disorder of the nanoparticles.

  5. Vibrational density of states and thermodynamics at the nanoscale: the 3D-2D transition in gold nanostructures

    PubMed Central

    Carles, R.; Benzo, P.; Pécassou, B.; Bonafos, C.

    2016-01-01

    Surface enhanced Raman scattering (SERS) is generally and widely used to enhance the vibrational fingerprint of molecules located at the vicinity of noble metal nanoparticles. In this work, SERS is originally used to enhance the own vibrational density of states (VDOS) of nude and isolated gold nanoparticles. This offers the opportunity of analyzing finite size effects on the lattice dynamics which remains unattainable with conventional techniques based on neutron or x-ray inelastic scattering. By reducing the size down to few nanometers, the role of surface atoms versus volume atoms become dominant, and the “text-book” 3D-2D transition on the dynamical behavior is experimentally emphasized. “Anomalies” that have been predicted by a large panel of simulations at the atomic scale, are really observed, like the enhancement of the VDOS at low frequencies or the occurrence of localized modes at frequencies beyond the cut-off in bulk. Consequences on the thermodynamic properties at the nanoscale, like the reduction of the Debye temperature or the excess of the specific heat, have been evaluated. Finally the high sensitivity of reminiscent bulk-like phonons on the arrangements at the atomic scale is used to access the morphology and internal disorder of the nanoparticles. PMID:27982080

  6. 3D spin-flop transition in enhanced 2D layered structure single crystalline TlCo2Se2

    NASA Astrophysics Data System (ADS)

    Jin, Z.; Xia, Z.-C.; Wei, M.; Yang, J.-H.; Chen, B.; Huang, S.; Shang, C.; Wu, H.; Zhang, X.-X.; Huang, J.-W.; Ouyang, Z.-W.

    2016-10-01

    The enhanced 2D layered structure single crystalline TlCo2Se2 has been successfully fabricated, which exhibits field-induced 3D spin-flop phase transitions. In the case of the magnetic field parallel to the c-axis (B//c), the applied magnetic field induces the evolution of the noncollinear helical magnetic coupling into a ferromagnetic (FM) state with all the magnetization of the Co ion parallel to the c-axis. A striking variation of the field-induced strain within the ab-plane is noticed in the magnetic field region of 20-30 T. In the case of the magnetic field perpendicular to the c-axis (B  ⊥  c), the inter-layer helical antiferromagnetic (AFM) coupling may transform to an initial canted AFM coupling, and then part of it transforms to an intermediate metamagnetic phase with the alignment of two-up-one-down Co magnetic moments and finally to an ultimate FM coupling in higher magnetic fields. The robust noncollinear AFM magnetic coupling is completely destroyed above 30 T. In combination with the measurements of magnetization, magnetoresistance and field-induced strain, a complete magnetic phase diagram of the TlCo2Se2 single crystal has been depicted, demonstrating complex magnetic structures even though the crystal geometry itself gives no indication of the magnetic frustration.

  7. Frequency measurement of the 2S(1/2)-2D(3/2) electric quadrupole transition in a single 171Yb+ ion.

    PubMed

    Webster, Stephen; Godun, Rachel; King, Steven; Huang, Guilong; Walton, Barney; Tsatourian, Veronika; Margolis, Helen; Lea, Stephen; Gill, Patrick

    2010-03-01

    We report on precision laser spectroscopy of the 2S(1/2)(F = 0)-2D(3/2) (F = 2, m(F) = 0) clock transition in a single ion of 171Yb+. The absolute value of the transition frequency, determined using an optical frequency comb referenced to a hydrogen maser, is 688358979309310 +/- 9 Hz. This corresponds to a fractional frequency uncertainty of 1.3 x 10(-14).

  8. Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Abramov, I. I.; Danilyuk, A. L.

    1997-08-01

    A kinetic model of coherent transport with self-organized carrier transfer via midband gap semiconductor states in metal-insulator-midband gap semiconductor-insulator-semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a result of continuous oscillations of charge carriers at midband gap semiconductor states.

  9. High-channel-count plasmonic filter with the metal-insulator-metal Fibonacci-sequence gratings.

    PubMed

    Gong, Yongkang; Liu, Xueming; Wang, Leiran

    2010-02-01

    Fibonacci-sequence gratings based on metal-insulator-metal waveguides are proposed. The spectrum properties of this structure are numerically investigated by using the transfer matrix method. Numerical results demonstrate that the proposed structure can generate high-channel-count plasmonic stop bands and can find significant applications in highly integrated dense wavelength division multiplexing networks.

  10. Peltier effect in normal metal-insulator-heavy fermion metal junctions

    NASA Astrophysics Data System (ADS)

    Goltsev, A. V.; Rowe, D. M.; Kuznetsov, V. L.; Kuznetsova, L. A.; Min, Gao

    2003-04-01

    A theoretical study has been undertaken of the Peltier effect in normal metal-insulator-heavy fermion metal junctions. The results indicate that, at temperatures below the Kondo temperature, such junctions can be used as electronic microrefrigerators to cool the normal metal electrode and are several times more efficient in cooling than the normal metal-heavy fermion metal junctions.

  11. In-situ Hydrogen Sorption 2D-ACAR Facility for the Study of Metal Hydrides for Hydrogen Storage

    NASA Astrophysics Data System (ADS)

    Legerstee, W. J.; de Roode, J.; Anastasopol, A.; Falub, C. V.; Eijt, S. W. H.

    We developed a dedicated hydrogen sorption setup coupled to a positron 2D-ACAR (two-dimensional Angular Correlation of Annihilation Radiation) setup employing a 22Na-source, which will enable to collect 2D-ACAR momentum distributions in-situ as a function of temperature, hydrogen pressure and hydrogen content. In parallel, a dedicated glovebox was constructed for handling air-sensitive metal and metal hydride samples, with a special entrance for the 2D-ACAR sample insert. The 2D-ACAR setup was tested in first measurements on a Pd0.75Ag0.25 foil and on a ball-milled MgH2 powder in both the hydrogen loaded and desorbed states. The hydrogen loaded Pd0.75Ag0.25Hx sample was kept under a 1 bar hydrogen pressure to prevent partial desorption during measurements at room temperature. The collected 2D-ACAR distributions of Pd0.75Ag0.25 and Pd0.75Ag0.25Hx showed similar features as observed in previous studies. The broadening of the ACAR distributions observed for the Mg to MgH2 metal-insulator transition was compared in a quantitative manner to ab-initio calculations reported in the literature.

  12. 1α,25(OH)2D3 Suppresses the Migration of Ovarian Cancer SKOV-3 Cells through the Inhibition of Epithelial–Mesenchymal Transition

    PubMed Central

    Hou, Yong-Feng; Gao, Si-Hai; Wang, Ping; Zhang, He-Mei; Liu, Li-Zhi; Ye, Meng-Xuan; Zhou, Guang-Ming; Zhang, Zeng-Li; Li, Bing-Yan

    2016-01-01

    Ovarian cancer is the most lethal gynecological malignancy due to its high metastatic ability. Epithelial-mesenchymal transition (EMT) is essential during both follicular rupture and epithelium regeneration. However, it may also accelerate the progression of ovarian carcinomas. Experimental studies have found that 1α,25-dihydroxyvitamin-D3 [1α,25(OH)2D3] can inhibit the proliferation of ovarian cancer cells. In this study, we investigated whether 1α,25(OH)2D3 could inhibit the migration of ovarian cancer cells via regulating EMT. We established a model of transient transforming growth factor-β1(TGF-β1)-induced EMT in human ovarian adenocarcinoma cell line SKOV-3 cells. Results showed that, compared with control, 1α,25(OH)2D3 not only inhibited the migration and the invasion of SKOV-3 cells, but also promoted the acquisition of an epithelial phenotype of SKOV-3 cells treated with TGF-β1. We discovered that 1α,25(OH)2D3 increased the expression of epithelial marker E-cadherin and decreased the level of mesenchymal marker, Vimentin, which was associated with the elevated expression of VDR. Moreover, 1α,25(OH)2D3 reduced the expression level of transcription factors of EMT, such as slug, snail, and β-catenin. These results indicate that 1α,25(OH)2D3 suppresses the migration and invasion of ovarian cancer cells by inhibiting EMT, implying that 1α,25(OH)2D3 might be a potential therapeutic agent for the treatment of ovarian cancer. PMID:27548154

  13. SU-E-P-35: Real-Time Patient Transit Dose Verification of Volumetric Modulated Arc Radiotherapy by a 2D Ionization Chamber Array

    SciTech Connect

    Liu, X

    2015-06-15

    Purpose: To explore the real-time dose verification method in volumetric modulated arc radiotherapy (VMAT) with a 2D array ion chamber array. Methods: The 2D ion chamber array was fixed on the panel of electronic portal imaging device (EPID). Source-detector distance (SDD)was 140cm. 8mm RW3 solid water was added to the detector panel to achieve maximum readings.The patient plans for esophageal, prostate and liver cancers were selected to deliver on the cylindrical Cheese phantom 5 times in order to validate the reproducibility of doses. Real-time patient transit dose measurements were performed at each fraction. Dose distributions wereevaluated using gamma index criteria of 3mm DTA and 3% dose difference referred to the firsttime Result. Results: The gamma index pass rate in the Cheese phantom were about 98%; The gamma index pass rate for esophageal, liver and prostate cancer patient were about 92%,94%, and 92%, respectively; Gamma pass rate for all single fraction were more than 90%. Conclusion: The 2D array is capable of monitoring the real time transit doses during VMAT delivery. It is helpful to improve the treatment accuracy.

  14. Metal-Insulator-Metal Diode Process Development for Energy Harvesting Applications

    DTIC Science & Technology

    2010-04-01

    performed using a high -temperature deposition and ion milling process . I-V measurements will be performed on General Order of Operations: 1...Fabricate MIM diodes using one of two processes a. Low-temperature deposition recipes in conjunction with a lift-off process b. High -temperature...Metal-Insulator-Metal Diode Process Development for Energy Harvesting Applications by Matthew Chin, Stephen Kilpatrick, and Dr. Richard

  15. Novel Way to Characterize Metal-Insulator-Metal Devices via Nanoindentation: Preprint

    SciTech Connect

    Periasamy, P.; Packard, C. E.; O?Hayre, R. P.; Berry, J. J.; Parilla, P. A.; Ginley, D. S.

    2011-07-01

    Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second 'metal' (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.

  16. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times.

  17. Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

    DTIC Science & Technology

    2011-12-01

    K. Design and Develop- ment of Batch Fabricatable Metal-Insulator-Metal Diode and Microstrip Slot Antenna as Rectenna Elements. Sensors and...rectifying radiation absorbed by a nano- antenna designed for the terahertz frequency range (visible and infrared wavelengths) (1, 2). For this application...referred to as “rectification reversal” is due to the switching between Fowler-Nordheim and direct tunneling. Rectification reversal can be explained by

  18. Investigation of high efficiency silicon MINP solar cells. [metal-insulator n/p

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.; Addis, F. W.

    1986-01-01

    This paper includes results of both theoretical and experimental studies of silicon metal insulator n/p cells. Performance calculations are described which give expected efficiencies as a function of base resistivity. Fabrication and characterization of cells are discussed, and detailed analyses of current loss mechanisms are presented. Using 0.2-ohm cm FZ material and Mg tunneling contacts, AM 1 efficiencies in the range of 16.5-17 percent have been achieved.

  19. Slow light in metal-insulator-metal waveguide by negative Goos-Hänchen shift

    NASA Astrophysics Data System (ADS)

    Oh, Geum-Yoon; Chheang, Vuthy; Kim, Doo-Gun; Kim, Tae-Ryong; Jun, Li; Kim, Hong-Seung; Choi, Young-Wan

    2014-12-01

    We demonstrated group velocity delay using a metal-insulator-metal structure for slow light that would be very simple to fabricate. A negative Goos-Hänchen shift of the surface plasmon resonance can be caused by incident radiation while reflecting, resulting in a general group delay. Using this phenomenon, we induced a group delay of 70 fs using a very simple 20-μm-long waveguide.

  20. Griffiths singularity of quantum phase transition in ion-gated ZrNCl

    NASA Astrophysics Data System (ADS)

    Saito, Yu; Nojima, Tsutomu; Iwasa, Yoshihiro

    Recent technological advances of thin films fabrication, especially mechanical exfoliation, led to discoveries of less-disordered highly-crystalline two-dimensional (2D) superconductors; atomically thin NbSe2 and ion-gated 2D materials, which show intrinsic properties of 2D superconductors with minimal disorder; for example, metallic ground state, and unconventional 2D Ising superconductivity due to pure spin-valley locking effect. In this talk, we focus on magnetotransport properties of an ionic-liquid gated ZrNCl, which exhibited Griffiths singularity-like behavior in superconductor-metal-insulator transition induced by magnetic fields at low carrier concentrations. The overall behavior is quite similar to the recent results of superconducting Ga thin films, in which quantum Griffiths singularity was observed in vortex-glass state. We will discuss the relationship between Griffiths singularity and quantum tunneling or flux flow of vortices phase (vortex liquid) in our system

  1. Optical Properties of Some Metal-Insulator Composites.

    NASA Astrophysics Data System (ADS)

    Noh, Tae Won

    Ni-MgO granular composites were prepared by coprecipitation of NiO-MgO solid solutions and their preferential reduction in a hydrogen atmosphere. Measured reflection spectra of the composites were better described by the Effective Medium Approximation (EMA) than by the Maxwell-Garnett theory (MGT). The conductivities and the dielectric constants were derived by a Kramers-Kronig transformation, and they showed a qualitative agreement with the EMA. In the far -infrared region, the percolation transition was observed in the reflection spectra, and also seen in the derived conductivities and the dielectric constants. The far-infrared absorption of Ag-smoke--teflon composites was studied. Because of the high resistivity of the oxide layer, the far-infrared electric dipole absorption was enhanced by three or four orders of magnitude, and it became comparable to the magnetic dipole absorption. The effects of the oxide coating on the infrared and visible absorption of silver smoke were also studied using Ag-smoke --KBr composites. In the infrared and visible region, the complete Mie theory gave better descriptions of our experimental results than the MGT. Comparison of our experimental data and the Mie calculation showed that the oxide coating on the particles did not strongly affect the extinction coefficient of the Ag-smoke--KBr composite in the near-infrared and visible range. The "anomalous" far-infrared absorption of small metal particles was investigated thoroughly using oxide -free Ag--teflon composites and Ag-smoke--teflon composites. For the oxide-free Ag particles, large enhancement of the absorption coefficient over the prediction of the MGT was observed and explained by enhancement of magnetic dipole absorption based on the increase of the eddy current paths due to clustering. For the Ag-smoke--teflon composite, excellent agreement between the experimental absorption and the MGT was obtained when the particle size distribution and oxide coating were taken into

  2. The accuracy of a 2D and 3D dendritic tip scaling parameter in predicting the columnar to equiaxed transition (CET)

    NASA Astrophysics Data System (ADS)

    Seredyński, M.; Rebow, M.; Banaszek, J.

    2016-09-01

    The dendrite tip kinetics model accuracy relies on the reliability of the stability constant used, which is usually experimentally determined for 3D situations and applied to 2D models. The paper reports authors' attempts to cure the situation by deriving 2D dendritic tip scaling parameter for aluminium-based alloy: Al-4wt%Cu. The obtained parameter is then incorporated into the KGT dendritic growth model in order to compare it with the original 3D KGT counterpart and to derive two-dimensional and three-dimensional versions of the modified Hunt's analytical model for the columnar-to-equiaxed transition (CET). The conclusions drawn from the above analysis are further confirmed through numerical calculations of the two cases of Al-4wt%Cu metallic alloy solidification using the front tracking technique. Results, including the porous zone-under-cooled liquid front position, the calculated solutal under-cooling and a new predictor of the relative tendency to form an equiaxed zone, are shown, compared and discussed two numerical cases. The necessity to calculate sufficiently precise values of the tip scaling parameter in 2D and 3D is stressed.

  3. A nonlinear dynamical 2D coupled mathematical model for phase transitions in methane gas hydrates within permafrost under climate change

    NASA Astrophysics Data System (ADS)

    Duxbury, N. S.; Romanovsky, V. E.; Romanovskii, N. N.; Garagulya, L. S.; Brouchkov, A. V.; Komarov, I. A.; Roman, L. T.; Tipenko, G. S.; Buldovich, S. N.; Maximova, L. N.

    2012-12-01

    We have developed coupled permafrost - carbon physical and numerical models, where carbon is in the form of methane clathrate hydrate ( CH4*6H2O ) in a porous subsurface environment. The driving force for the subsurface temperature field dynamics is climate variations on the Earth's surface. This is an upper boundary condition for the nonlinear evolutionary system of partial differential equations (PDEs) describing subsurface heat transfer (parabolic PDEs) in a generalized Stefan formulation. The developed numerical model is a valuable computational tool to quantitatively study nonlinear dynamical thermal processes with phase transitions in terrestrial and Martian subsurfaces. Our model is multifrontal and therefore allows one to perform computations for a problem with any number of emerging/vanishing phase transition interfaces (both in methane gas hydrate deposits and in permafrost), since the model treats these fronts implicitly in an enthalpy formulation and in corresponding finite-difference scheme. This model takes into account the pressure (and therefore the depth) dependence of the phase transition temperature for methane clathrate hydrate. We have performed model computations using the thermophysical characteristics (heat capacity, density/porosity, thermal conductivity) for the Siberian subsurface. It can be used as a terrestrial analog for the Martian subsurface (e.g., Duxbury et al., 2001). Also, thermophysical coefficients from laboratory experiments for methane clathrate hydrate were used in our model. In addition, our model takes into account the dependence of subsurface thermophysical characteristics on temperature and spatial coordinates. The results of our computations and their interpretation will be presented. References. N. S. Duxbury, I. A. Zotikov, K. H. Nealson, V. E. Romanovsky, F. D. Carsey (2001). A numerical model for an alternative origin of Lake Vostok and its exobiological implications for Mars, Journal of Geophysical Research

  4. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    PubMed

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  5. Quantification of transition dipole strengths using 1D and 2D spectroscopy for the identification of molecular structures via exciton delocalization: Application to α-helices

    PubMed Central

    Grechko, Maksim; Zanni, Martin T.

    2012-01-01

    Vibrational and electronic transition dipole strengths are often good probes of molecular structures, especially in excitonically coupled systems of chromophores. One cannot determine transition dipole strengths using linear spectroscopy unless the concentration is known, which in many cases it is not. In this paper, we report a simple method for measuring transition dipole moments from linear absorption and 2D IR spectra that does not require knowledge of concentrations. Our method is tested on several model compounds and applied to the amide I′ band of a polypeptide in its random coil and α-helical conformation as modulated by the solution temperature. It is often difficult to confidently assign polypeptide and protein secondary structures to random coil or α-helix by linear spectroscopy alone, because they absorb in the same frequency range. We find that the transition dipole strength of the random coil state is 0.12 ± 0.013 D2, which is similar to a single peptide unit, indicating that the vibrational mode of random coil is localized on a single peptide unit. In an α-helix, the lower bound of transition dipole strength is 0.26 ± 0.03 D2. When taking into account the angle of the amide I′ transition dipole vector with respect to the helix axis, our measurements indicate that the amide I′ vibrational mode is delocalized across a minimum of 3.5 residues in an α-helix. Thus, one can confidently assign secondary structure based on exciton delocalization through its effect on the transition dipole strength. Our method will be especially useful for kinetically evolving systems, systems with overlapping molecular conformations, and other situations in which concentrations are difficult to determine. PMID:23163364

  6. Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2016-02-01

    Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

  7. 2D Transition Metal Dichalcogenides and Graphene-Based Ternary Composites for Photocatalytic Hydrogen Evolution and Pollutants Degradation

    PubMed Central

    Chen, Ying; Sun, Hongqi; Peng, Wenchao

    2017-01-01

    Photocatalysis have attracted great attention due to their useful applications for sustainable hydrogen evolution and pollutants degradation. Transition metal dichalcogenides (TMDs) such as MoS2 and WS2 have exhibited great potential as cocatalysts to increase the photo-activity of some semiconductors. By combination with graphene (GR), enhanced cocatalysts of TMD/GR hybrids could be synthesized. GR here can act as a conductive electron channel for the transport of the photogenerated electrons, while the TMDs nanosheets in the hybrids can collect electrons and act as active sites for photocatalytic reactions. This mini review will focus on the application of TMD/GR hybrids as cocatalysts for semiconductors in photocatalytic reactions, by which we hope to provide enriched information of TMD/GR as a platform to develop more efficient photocatalysts for solar energy utilization. PMID:28336898

  8. 2-D and Mott Transition Studies on Metal (M) Doped PrBa2Cu3O7

    NASA Astrophysics Data System (ADS)

    Chen, T.-P.; Wu, K.; Li, Q.; Chen, B.; Kandel, H.; Chen, J. C.; Mohammed, M.; Al-Hilo, A.

    2013-11-01

    We doped PrBa2Cu3O7 (PBCO) using various metals (M) to obtain PrBa2[Cu(1- x)M x ]O7 (PBCMO) ceramic samples and epitaxial thin films. As suggested in the above chemical composition, these samples were made by replacing some of the Cu ions in PBCO with its metallic neighbors (M) such as Al, Co, Fe, Ga, Ni, and Zn at four different doping concentrations ( x)—0.05, 0.10, 0.15, and 0.20. The epitaxial films were made by performing laser ablation on a ceramic disk target. We also present the results of our transport and Raman studies on the aforementioned PBCMO samples. From our Raman data, we were able to identify the doping sites used. Combined with the transport data, this enabled us to explain the abnormal increase in the electrical resistivity of our doped samples. Our transport property studies on PBCMO samples and the YBCO/PBCMO multilayer allowed us to deduce the superconducting coupling length, the finite-size effect, and the two-dimensional phase transition of YBCO.

  9. Dispersion of metal-insulator-metal plasmon polaritons probed by cathodoluminescence imaging spectroscopy

    SciTech Connect

    Kuttge, Martin; Cai, Wei; Garcia de Abajo, F. Javier; Polman, Albert

    2009-07-15

    Cathodoluminescence imaging spectroscopy is used to excite and characterize the resonant modes of Fabry-Perot resonators for surface plasmon polaritons confined in a metal-insulator-metal (MIM) geometry. The smallest MIM plasmon wavelength derived from the observed mode pattern is found to be 160 nm in cavities with a 10 nm SiO{sub 2} layer for a free-space wavelength of 645 nm. The measured wavelength agrees well with values from analytical dispersion relation calculations. Calculations of the excitation probability show that the resonant excitation of MIM plasmons depends strongly on the electron energy due to phase retardation effects resulting from the finite electron velocity.

  10. Memory Impedance in TiO2 based Metal-Insulator-Metal Devices

    PubMed Central

    Qingjiang, Li; Khiat, Ali; Salaoru, Iulia; Papavassiliou, Christos; Hui, Xu; Prodromakis, Themistoklis

    2014-01-01

    Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO2-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects. We show how non-zero crossing current-voltage hysteresis loops can appear and we experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant. PMID:24682245

  11. Metal-insulator-semi-conductor studies of lead telluride. [capacitance and conductance-voltage characteristics

    NASA Technical Reports Server (NTRS)

    Lilly, D. A.; Joslin, D. E.; Kan, H. K. A.

    1976-01-01

    The capacitance and conductance-voltage characteristics were measured on metal-insulator-semiconductor capacitors fabricated with zirconium dioxide films on single-crystal lead telluride. At 77 K, on both n- and p-type substrates, evidence of surface potential control was obtained. Comparison of the measured capacitance-voltage characteristics with those calculated from the equilibrium solution of the one-dimensional Poisson equation indicated qualitative agreement, although the slope of the measured capacitance in the region near the capacitance minimum was less steep than calculated.

  12. Metal-insulator-metal photomonitor for optical waveguides at telecom wavelengths

    NASA Astrophysics Data System (ADS)

    Ishii, Satoshi; Baghdasaryan, Hovik; Marciniak, Marian; Otomo, Akira

    2016-12-01

    A compact photodetector for an optical waveguide that is easy to integrate is necessary for optical on-chip devices. We demonstrate that a metallic contact covering an optical waveguide can monitor guided light in the 680 to 1550 nm wavelength range without blocking it. The contact is made of Au, titania, and Ti thin films that form a metal-insulator-metal structure. A concise design and facile fabrication process make our device particularly suitable for optical waveguides made of insulators such as polymers and dielectrics.

  13. Large-Size 2D β-Cu2 S Nanosheets with Giant Phase Transition Temperature Lowering (120 K) Synthesized by a Novel Method of Super-Cooling Chemical-Vapor-Deposition.

    PubMed

    Li, Bo; Huang, Le; Zhao, Guangyao; Wei, Zhongming; Dong, Huanli; Hu, Wenping; Wang, Lin-Wang; Li, Jingbo

    2016-10-01

    2D triangular β-Cu2 S nanosheets with large size and high quality are synthesized by a novel method of super-cooling chemical-vapor-deposition. The phase transition of this 2D material from β-Cu2 S to γ-Cu2 S occurs at 258 K (-15 °C), and such transition temperature is 120 K lower than that of its bulk counterpart (about 378 K).

  14. Noise and Phase Transitions

    NASA Astrophysics Data System (ADS)

    Chen, Zhi; Yu, Clare C.

    2006-03-01

    Noise is present in many physical systems and is often viewed as a nuisance. Yet it can also be a probe of microscopic fluctuations. There have been indications recently that the noise in the resistivity increases in the vicinity of the metal-insulator transition. But what are the characteristics of the noise associated with well-understood first and second order phase transitions? It is well known that critical fluctuations are associated with second order phase transitions, but do these fluctuations lead to enhanced noise? We have addressed these questions using Monte Carlo simulations to study the noise in the 2D Ising model which undergoes a second order phase transition, and in the 5-state Potts model which undergoes a first order phase transition. We monitor these systems as the temperature drops below the critical temperature. At each temperature, after equilibration is established, we obtain the time series of quantities characterizing the properties of the system, i.e., the energy and magnetization per site. We apply different methods, such as the noise power spectrum, the Detrended Fluctuation Analysis (DFA) and the second spectrum of the noise, to analyze the fluctuations in these quantities.

  15. Two Keggin-type heteropolytungstates with transition metal as a central atom: Crystal structure and magnetic study with 2D-IR correlation spectroscopy

    SciTech Connect

    Chai, Feng; Chen, YiPing; You, ZhuChai; Xia, ZeMin; Ge, SuZhi; Sun, YanQiong; Huang, BiHua

    2013-06-01

    Two Keggin-type heteropolytungstates, [Co(phen)₃]₃[CoW₁₂O₄₀]·9H₂O 1 (phen=1,10-phenanthroline) and [Fe(phen)₃]₂[FeW₁₂O₄₀]·H₃O·H₂O 2, have been synthesized via the hydrothermal technique and characterized by single crystal X-ray diffraction analyses, IR, XPS, TG analysis, UV–DRS, XRD, thermal-dependent and magnetic-dependent 2D-COS IR (two-dimensional infrared correlation spectroscopy). Crystal structure analysis reveals that the polyanions in compound 1 are linked into 3D supramolecule through hydrogen bonding interactions between lattice water molecules and terminal oxygen atoms of polyanion units, and [Co(phen)₃]²⁺ cations distributed in the polyanion framework with many hydrogen bonding interactions. The XPS spectra indicate that all the Co atoms in 1 are +2 oxidation state, the Fe atoms in 2 existing with +2 and +3 mixed oxidation states. - Graphical abstract: The magnetic-dependent synchronous 2D correlation IR spectra of 1 (a), 2 (b) over 0–50 mT in the range of 600–1000 cm⁻¹, the obvious response indicate two Keggin polyanions skeleton susceptible to applied magnetic field. Highlights: • Two Keggin-type heteropolytungstates with transition metal as a central atom has been obtained. • Compound 1 forms into 3D supramolecular architecture through hydrogen bonding between water molecules and polyanions. • Magnetic-dependent 2D-IR correlation spectroscopy was introduced to discuss the magnetism of polyoxometalate.

  16. Validating a 0D predator-prey model for LH Transition with its 1D-2D supersets: effects of heating and fueling on Hysteresis and transition dynamics

    NASA Astrophysics Data System (ADS)

    Malkov, Mikhail; Diamond, Patrick; Miki, Kazuhiro

    2013-10-01

    The LH transition crucially depends on the heat and particle deposition, transport and electric field shear suppression. Despite the inhomogeneity of these phenomena, a popular 0D predator-prey model seems to capture the essential transition dynamics, including the limit cycle pre-H-mode oscillations (or I-mode). However, its predictions regarding hysteresis are inconclusive. This is understandable at least because of the known deep fuel lowering of the transition threshold. The readily available fueling devices are the edge neutral penetration and an internal deposition via the supersonic molecular beam injection (SMBI). This suggests a minimal extension of the 0D model by using bi-modal particle distributions. To formulate this extension accurately, a step-by-step comparison with a 1D treatment is required. Fortunately a suitable 1D numerical model has been recently developed specifically for the LH transition studies. In this work, we use the 1D model for the following purposes. First, we explore fueling effects as occurring both by edge neutral penetration, and internal deposition (SMBI) at a finite depth within the separatrix. Second, as the 0D model responds positively to the oscillating heating power, we include a periodic repetitive SMBI firing. Supported by the US DoE.

  17. Low-Power All-Optical Bistable Device of Twisted-Nematic Liquid Crystal Based on Surface Plasmons in a Metal-Insulator-Metal Structure

    NASA Astrophysics Data System (ADS)

    Tien Thanh, Pham; Tanaka, Daisuke; Fujimura, Ryushi; Takanishi, Yoichi; Kajikawa, Kotaro

    2013-01-01

    A low-power all-optical bistable device of twisted-nematic liquid crystal (TN-LC) is reported, on the basis of coupled surface plasmons (SPs) in a metal-insulator-metal (MIM) structure. The lowest threshold switching illumination was 0.3 mW/mm2, which is much lower than the value we previously reported for a similar all-optical TN-LC device based on the coupled SPs in a gold grating. The threshold illumination is lower at higher temperature up to the phase transition. The TN-LC device is promising for two-dimensional optical memories or spatial light modulators, since the structure is simple and free from electronic circuits.

  18. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    PubMed Central

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  19. 2D Dynamic Models of Subduction: Links between Surface Plate Motion and Deformation in the Transition Zone from Observations of Deep Slab Seismicity

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2015-12-01

    Observations of seismicity and seismic tomography provide constraints on the geometry of slabs within mantle, while compression/tension axis derived from moment tensor solutions provide constraints on the internal deformation of slabs. However, since these observations provide only a somewhat blurred or incomplete snapshot of the slab in time, it is difficult to directly relate these observations to the evolution of the slab geometry and the forces acting on and within the slab. In contrast, plate tectonic reconstructions provide time-dependent constraints on the surface motion of plates and the trench at subduction zones, which are related to the dynamical evolution of the slab. We use 2D geodynamical simulations of subduction to explore the relationship between dynamical process within the deforming slab and the observations of surface plate motion and the state-of-stress in slabs. Specifically we utilize models that include the extended Boussinesq approximation (shear heating and latent heat terms in the energy equation), a layered lithosphere with pyrolite, harzburgite and basalt/eclogite, compositionally-dependent phase transitions, and a composite rheology with yielding. The models employ a weak crustal layer that decouples the overriding and subducting plates and allows for dynamically determined trench motion. Here we show that, 1) multiple phase transitions increase slab folding, 2) ridge push significantly increases trench retreat, and 3) strength of the weak crustal layer influences slab detachment. Compared to past studies a more realistic treatment of the phase transitions makes trench retreat more difficult to generate: a weaker plate may encourage slab retreat but detaches once the slab tip crosses into the transition zone due to the rapid increase in slab density. As suggested by previous studies, slab folding within the transition zone changes the direction of forces on the slab and causes periodic changes from trench retreat to trench advance. We

  20. Critical Slowing of Density Fluctuations Approaching the Isotropic-Nematic Transition in Liquid Crystals: 2D IR Measurements and Mode Coupling Theory.

    PubMed

    Sokolowsky, Kathleen P; Bailey, Heather E; Hoffman, David J; Andersen, Hans C; Fayer, Michael D

    2016-07-21

    Two-dimensional infrared (2D IR) data are presented for a vibrational probe in three nematogens: 4-cyano-4'-pentylbiphenyl, 4-cyano-4'-octylbiphenyl, and 4-(trans-4-amylcyclohexyl)-benzonitrile. The spectral diffusion time constants in all three liquids in the isotropic phase are proportional to [T*/(T - T*)](1/2), where T* is 0.5-1 K below the isotropic-nematic phase transition temperature (TNI). Rescaling to a reduced temperature shows that the decays of the frequency-frequency correlation function (FFCF) for all three nematogens fall on the same curve, suggesting a universal dynamic behavior of nematogens above TNI. Spectral diffusion is complete before significant orientational relaxation in the liquid, as measured by optically heterodyne detected-optical Kerr effect (OHD-OKE) spectroscopy, and before any significant orientational randomization of the probe measured by polarization selective IR pump-probe experiments. To interpret the OHD-OKE and FFCF data, we constructed a mode coupling theory (MCT) schematic model for the relationships among three correlation functions: ϕ1, a correlator for large wave vector density fluctuations; ϕ2, the orientational correlation function whose time derivative is the observable in the OHD-OKE experiment; and ϕ3, the FFCF for the 2D IR experiment. The equations for ϕ1 and ϕ2 match those in the previous MCT schematic model for nematogens, and ϕ3 is coupled to the first two correlators in a straightforward manner. Resulting models fit the data very well. Across liquid crystals, the temperature dependences of the coupling constants show consistent, nonmonotonic behavior. A remarkable change in coupling occurs at ∼5 K above TNI, precisely where the rate of spectral diffusion in 5CB was observed to deviate from that of a similar nonmesogenic liquid.

  1. An Exploration and Optimization of the Metal Insulator Transition in Vanadium Dioxide Thin Films

    DTIC Science & Technology

    2009-12-02

    Standard Form 298 (Rev. 8 /98) REPORT DOCUMENTATION PAGE Prescribed by ANSI Std. Z39.18 Form Approved OMB No. 0704-0188 The public reporting...ELEMENT NUMBER 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 6. AUTHOR(S) 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8 . PERFORMING...NUMBER(S) 12. DISTRIBUTION/AVAILABILITY STATEMENT 13 . SUPPLEMENTARY NOTES 14. ABSTRACT 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: a. REPORT

  2. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    DOE PAGES

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; ...

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variablemore » range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.« less

  3. Resistance noise at the metal-insulator transition in thermochromic VO2 films

    NASA Astrophysics Data System (ADS)

    Topalian, Zareh; Li, Shu-Yi; Niklasson, Gunnar A.; Granqvist, Claes G.; Kish, Laszlo B.

    2015-01-01

    Thermochromic VO2 films were prepared by reactive DC magnetron sputtering onto heated sapphire substrates and were used to make 100-nm-thick samples that were 10 μm wide and 100 μm long. The resistance of these samples changed by a factor ˜2000 in the 50 < Ts < 70 °C range of temperature Ts around the "critical" temperature Tc between a low-temperature semiconducting phase and a high-temperature metallic-like phase of VO2. Power density spectra S(f) were extracted for resistance noise around Tc and demonstrated unambiguous 1/f behavior. Data on S(10 Hz)/Rs2 scaled as Rsx, where Rs is sample resistance; the noise exponent x was -2.6 for Ts < Tc and +2.6 for Ts > Tc. These exponents can be reconciled with the Pennetta-Trefán-Reggiani theory [Pennetta et al., Phys. Rev. Lett. 85, 5238 (2000)] for lattice percolation with switching disorder ensuing from random defect generation and healing in steady state. Our work hence highlights the dynamic features of the percolating semiconducting and metallic-like regions around Tc in thermochromic VO2 films.

  4. The metal-insulator phase transition in mixed potassium-rubidium electro-sodalites.

    PubMed

    Madsen, Georg K H

    2004-09-01

    The collapse under pressure of the antiferromagnetic ground state of the potassium-rubidium electro-sodalite is studied using the linearized augmented plane wave with local orbitals method. Special considerations needed for setting up this basis for systems such as the electro-sodalites are discussed. It is demonstrated that the magnetism collapses at a unit-cell volume similar to potassium electro-sodalite and rubidium electro-sodalite. A critical pressure of 8 GPa is predicted. The mechanism behind the collapse is a mixing of the F-center states with the highly diffuse unoccupied p states of the alkali atoms.

  5. Magnetism and Metal-Insulator Transition in Fe(Sb1−xTex)2

    SciTech Connect

    Petrovic, C.; Hu, R.; Mitrovic, V.F.

    2009-02-09

    We have investigated structural, magnetic, and transport properties of Fe(Sb{sub 1-x}Te{sub x}){sub 2} single crystals. Whereas metallic ground state is induced for x = 0.001, canted antiferromagnetism is observed for 0.1 {le} x {le} 0.4 with an intermediate ferromagnetic phase for x = 0.2. With higher Te doping, semiconducting behavior is restored and the variable range hopping conduction mechanism dominates at low temperatures for 0.4 {le} x {le} 0.6. We discuss our results within the framework of inverted metal to insulator in correlated electron insulators.

  6. Mesoscopic Effects and Metal-Insulator Transition in Vanadium Oxide Nanowires

    DTIC Science & Technology

    2012-07-08

    with those of other recent studies implies that M2 is generically present in  thin   films  and bulk  samples below  ,  though  this  fact has not been...electrical  contacts. For  example, we succeeded  in growing high quality epitaxial VO2  films , by physical vapor transport using a  V2O5  source, on...Investigations were performed with a view to making such devices in the surface, or in thin crystals, of vanadium dioxide. This required developing

  7. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    NASA Astrophysics Data System (ADS)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  8. Disordered systems and the metal-insulator transition: A super universality class

    NASA Astrophysics Data System (ADS)

    Hofstetter, E.

    1998-05-01

    The critical behavior of three-dimensional disordered systems is investigated by analyzing the spectral fluctuations of the energy spectrum. Our results suggest that the initial symmetries (orthogonal, unitary, and symplectic) are broken by the disorder at the critical point. The critical behavior, determined by the symmetry at the critical point, should therefore be independent of the previous invariances and be described by a ``super'' universality class. This result is strongly supported by the fact that we obtain the same critical exponent ν~=1.35 in the three cases: orthogonal, unitary, and symplectic.

  9. Metal-insulator transition in a weakly interacting disordered electron system

    NASA Astrophysics Data System (ADS)

    Ekuma, C. E.; Yang, S.-X.; Terletska, H.; Tam, K.-M.; Vidhyadhiraja, N. S.; Moreno, J.; Jarrell, M.

    2015-11-01

    The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, nonlocal cluster self-energy [Σc[G ˜] (i ,j ≠i ) ] up to second order in the perturbation expansion of interactions, U2, with a systematic incorporation of nonlocal spatial correlations and diagonal disorder, we explore the initial effects of electron interactions (U ) in three dimensions. We find that the critical disorder strength (WcU), required to localize all states, increases with increasing U ; implying that the metallic phase is stabilized by interactions. Using our results, we predict a soft pseudogap at the intermediate W close to WcU and demonstrate that the mobility edge (ωɛ) is preserved as long as the chemical potential, μ , is at or beyond the mobility edge energy.

  10. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    DOE PAGES

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance themore » binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.« less

  11. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    SciTech Connect

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance the binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.

  12. Temperature Dependent Low Frequency Optical and DC Transport Near a Metal Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kohlman, R. S.; Epstein, A. J.; Tanner, D. B.; Ihas, G. G.; Ishiguro, T.; Kaneko, H.; Min, Y. G.; MacDiarmid, A. G.

    1996-03-01

    We report measurements of the temperature dependent far infrared (10-100 cm-1) reflectance and milliKelvin transport of highly conducting polyaniline doped with d,1-camphorsulfonic acid (PAN-CSA) and polypyrrole doped with hexafluorophosphate (PPy-PF_6). With decreasing T (to ~ 200 K), the reflectance initially increases for ω > 20 cm-1 and decreases at lower frequencies. As T is further decreased, there is a continuous reduction in the reflection. There is no indication of a gap opening at low temperatures in contrast to earlier reports for PPy-PF_6.^1 These results will be discussed along with mK magnetotransport measurements for ``metallic'' PAN-CSA samples that have a negative magnetoresistance similar to metallic PPy-PF6 ^2 and other nonmetallic samples, indicating the importance of weak localization channels for transport in highly conducting polymers. ^*Supported in part by NIST ATP 1993-01-0149 and NSF DMR-9403894. ^1K. Lee, et al., Synth. Met. 68, 287 (1995). ^2J. C. Clark, et al., Synth. Met. 69, 215 (1995).

  13. Materials Characterization and Microelectronic Implementation of Metal-insulator Transition Materials and Phase Change Materials

    DTIC Science & Technology

    2015-03-26

    the black and red curves have 9 points, the green curve has 8 points, the blue curve has 7 points, the cyan curve has 6 points, and the magenta...chemometrics technique," Appl. Phys. Lett., vol. 90, no. 4, 2007. [125] C. J. Strachan, T. Rades, D. A. Newnham, K. C. Gordon, M. Pepper and P. F

  14. Single crystal diamond boron 'delta doped' nanometric layers for 2D electronic devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Butler, James

    2016-10-01

    Use of diamond as a semiconductor material suffers from the high activation energy of all known impurity dopants (0.37 eV for Boron, 0.6 eV for Phosphorous). To achieve the simultaneous carrier concentration and mobility desired for devices operating at room temperature, growth of a nanometric thick `delta' layer doped to above the metal insulator transition adjacent to high mobility intrinsic material can provide a 2D high mobility conduction layer. Critical to obtaining the enhanced mobility of the carriers in the layer next to the `delta' doped layer is the abruptness of the doping interface. Single and multiple nanometer thick epitaxial layers of heavily boron `delta' doped diamond have been grown on high quality, intrinsic lab grown diamond single crystals. These layers were grown in a custom microwave plasma activated chemical vapor deposition reactor based on a rapid reactant switching technique. Characterization of the `delta' layers by various analytical techniques will be presented. Electrical measurements demonstrating enhanced hole mobility (100 to 800 cm2/V sec) as well as other electrical characterizations will be presented.

  15. The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment

    PubMed Central

    Wu, Chong-Rong; Chang, Xiang-Rui; Wu, Chao-Hsin; Lin, Shih-Yen

    2017-01-01

    A growth model is proposed for the large-area and uniform MoS2 film grown by using sulfurization of pre-deposited Mo films on sapphire substrates. During the sulfurization procedure, the competition between the two mechanisms of the Mo oxide segregation to form small clusters and the sulfurization reaction to form planar MoS2 film is determined by the amount of background sulfur. Small Mo oxide clusters are observed under the sulfur deficient condition, while large-area and complete MoS2 films are obtained under the sulfur sufficient condition. Precise layer number controllability is also achieved by controlling the pre-deposited Mo film thicknesses. The drain currents in positive dependence on the layer numbers of the MoS2 transistors with 1-, 3- and 5- layer MoS2 have demonstrated small variation in material characteristics between each MoS2 layer prepared by using this growth technique. By sequential transition metal deposition and sulfurization procedures, a WS2/MoS2/WS2 double hetero-structure is demonstrated. Large-area growth, layer number controllability and the possibility of hetero-structure establishment by using sequential metal deposition and following sulfurization procedures have revealed the potential of this growth technique for practical applications. PMID:28176836

  16. The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment

    NASA Astrophysics Data System (ADS)

    Wu, Chong-Rong; Chang, Xiang-Rui; Wu, Chao-Hsin; Lin, Shih-Yen

    2017-02-01

    A growth model is proposed for the large-area and uniform MoS2 film grown by using sulfurization of pre-deposited Mo films on sapphire substrates. During the sulfurization procedure, the competition between the two mechanisms of the Mo oxide segregation to form small clusters and the sulfurization reaction to form planar MoS2 film is determined by the amount of background sulfur. Small Mo oxide clusters are observed under the sulfur deficient condition, while large-area and complete MoS2 films are obtained under the sulfur sufficient condition. Precise layer number controllability is also achieved by controlling the pre-deposited Mo film thicknesses. The drain currents in positive dependence on the layer numbers of the MoS2 transistors with 1-, 3- and 5- layer MoS2 have demonstrated small variation in material characteristics between each MoS2 layer prepared by using this growth technique. By sequential transition metal deposition and sulfurization procedures, a WS2/MoS2/WS2 double hetero-structure is demonstrated. Large-area growth, layer number controllability and the possibility of hetero-structure establishment by using sequential metal deposition and following sulfurization procedures have revealed the potential of this growth technique for practical applications.

  17. Nanoscale temperature sensor based on Fano resonance in metal-insulator-metal waveguide

    NASA Astrophysics Data System (ADS)

    Kong, Yan; Wei, Qi; Liu, Cheng; Wang, Shouyu

    2017-02-01

    In order to realize temperature measurements with high sensitivity using compact structure, a nanoscale metal-insulator-metal waveguide based sensor combining with Fano resonance is proposed in this paper. Sealed ethanol in resonant cavity is adopted to further improve sensing performance. Additionally, dual resonant cavity based configuration is designed to generate a Fano-based sharp and asymmetric spectrum, providing high figure of merit in measurements. Moreover, structural parameters are optimized considering both transmission rate and spectral peak width. Certified by numerical calculation, sensitivity of 0.36 nm/°C is acquired with the optimized structure, indicating the designed sensor can play an important role in the nano-integrated plasmonic devices for high-accurate temperature detection.

  18. Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.

    PubMed

    Bae, Joonho; Kim, Hyunjin; Zhang, Xiao-Mei; Dang, Cuong H; Zhang, Yue; Choi, Young Jin; Nurmikko, Arto; Wang, Zhong Lin

    2010-03-05

    Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at - 0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.

  19. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-09

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

  20. Passive and active metasurface based on metal-insulator-metal structures

    NASA Astrophysics Data System (ADS)

    Takahara, Junichi; Liu, Tianji; Hatada, Hideaki; Nagasaki, Yusuke; Miyata, Masashi; Kaijima, Akira

    2016-11-01

    A metal-insulator-metal (MIM) structure is a fundamental plasmonic structure that has been studied widely since the early stage of plasmonics. It enables us to confine surface plasmon polariton (SPP) and concentrate light into nano-space beyond the diffraction limit. A finite-length MIM structure is considered to be a Fabry-Perot resonator of SPP as a nanocavity. Here, we review our recent studies about active metasurface based on a reconfigurable metal-air-metal (MAM) nanocavity which modify reflection or absorption spectra in scattering by changing a gap distance. Such reconfigurable MAM nanocavity becomes promising candidate for various applications such as plasmonic color or sky radiator from visible to infrared range.

  1. Optical magnetism and plasmonic Fano resonances in metal-insulator-metal oligomers.

    PubMed

    Verre, R; Yang, Z J; Shegai, T; Käll, M

    2015-03-11

    The possibility of achieving optical magnetism at visible frequencies using plasmonic nanostructures has recently been a subject of great interest. The concept is based on designing structures that support plasmon modes with electron oscillation patterns that imitate current loops, that is, magnetic dipoles. However, the magnetic resonances are typically spectrally narrow, thereby limiting their applicability in, for example, metamaterial designs. We show that a significantly broader magnetic response can be realized in plasmonic pentamers constructed from metal-insulator-metal (MIM) sandwich particles. Each MIM unit acts as a magnetic meta-atom and the optical magnetism is rendered quasi-broadband through hybridization of the in-plane modes. We demonstrate that scattering spectra of individual MIM pentamers exhibit multiple Fano resonances and a broad subradiant spectral window that signals the magnetic interaction and a hierarchy of coupling effects in these intricate three-dimensional nanoparticle oligomers.

  2. A simple formulation for magnetoresistance in metal-insulator granular films with increased current

    NASA Astrophysics Data System (ADS)

    Boff, M. A. S.; Canto, B.; Baibich, M. N.; Pereira, L. G.

    2013-02-01

    We studied the tunnel magnetoresistance in metal/insulator granular films when the applied current is varied. The tunnel magnetoresistance shows a strong modification related to a non-Ohmic behaviour of theses materials. It was verified that spin-dependent tunnelling is the main mechanism for magnetoresistance at low applied current. However, when the current is high, another mechanism gets to be important: it is independent of the magnetization and is associated to variable range hopping between metallic grains. In this work, we propose a simple modification of Inoue and Maekawa's model for tunnelling magnetoresistance in granulars, rewriting the expression for resistance as a function of magnetic field and temperature, also taking into account the two different contributions.

  3. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

    SciTech Connect

    Golubev, Dmitri; Kuzmin, Leonid

    2001-06-01

    The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. {copyright} 2001 American Institute of Physics.

  4. Functional metal-insulator-metal top contacts for Si-based color photodetectors

    NASA Astrophysics Data System (ADS)

    Butun, Serkan; Aydin, Koray

    2016-12-01

    Here, we report on Si-based color photodetectors using monolithically integrated metal-insulator-metal Fabry-Perot cavity top contacts. Contacts were formed by depositing Ag/SiO2/Ag layers with different oxide thicknesses for each color. This allowed controlling the transmission band position and width while maintaining the high conductivity. We have obtained over 55% external quantum efficiency for different colors both numerically and experimentally. The FWHM was less than 50 nm and the rejection ratio was an order of magnitude for each color. The total transmission through these top contacts exceeded that of dye filters used in conventional color CCDs and CMOS imaging arrays. In addition, these contacts performed similarly to recently proposed plasmonic hole array filters without the necessity of complicated fabrication steps like FIB milling and e-beam lithography. This type of top contacts can serve as a cheap alternative to dye filters used in contemporary devices without making the fabrication complicated.

  5. Microrefrigeration by a pair of normal metal/insulator/superconductor junctions

    NASA Technical Reports Server (NTRS)

    Leivo, M. M.; Pekola, J. P.; Averin, D. V.

    1995-01-01

    We suggest and demonstrate experimentally that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistences of 1.0 and 1.1 kOmega is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 micrometers(exp 2) at T = 300 mK. This cooling power density implies that scaling of junction area up to about 1 mm(exp 2) should bring the cooling power into the microW range.

  6. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

    SciTech Connect

    Alimardani, Nasir; Conley, John F.

    2014-08-25

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.

  7. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    PubMed Central

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  8. Magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect

    NASA Astrophysics Data System (ADS)

    Zhou, X.; Ma, L.; Shi, Z.; Fan, W. J.; Zheng, Jian-Guo; Evans, R. F. L.; Zhou, S. M.

    2015-08-01

    We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic γ -IrMn3/Y3Fe5O12(YIG ) and Pt/YIG heterostructures. For γ -IrMn3/YIG , the EAMR and the AHLE resistivity change sign with temperature due to the competition between the spin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE) induced by the interfacial antiferromagnetic uncompensated magnetic moment. In contrast, for Pt/YIG, the AHLE resistivity changes sign with temperature whereas no sign change is observed in the EAMR. This is because the MPE and the SMR play a dominant role in the AHLE and the EAMR, respectively. As different types of galvanomagnetic properties, the AHLE and the EAMR have proved vital in disentangling the MPE and the SMR in metal/insulating-ferromagnet heterostructures.

  9. Massive Temperature-Induced Metal—Insulator Transition in Individual Nanowires of a Non-Stoichiometric Vanadium Oxide Bronze

    SciTech Connect

    Patridge, C.; Wu, T; Jaye, C; Ravel, B; Takeuchi, E; Fischer, D; Sambandamurthy, G; Banerjee, S

    2010-01-01

    Metal-insulator transitions in strongly correlated materials, induced by varying either temperature or dopant concentration, remain a topic of enduring interest in solid-state chemistry and physics owing to their fundamental importance in answering longstanding questions regarding correlation effects. We note here the unprecedented observation of a four-orders-of-magnitude metal-insulator transition in single nanowires of {delta}-K{sub x}V{sub 2}O{sub 5}, when temperature is varied, which thus represents a rare new addition to the pantheon of materials exhibiting pronounced metal-insulator transitions in proximity to room temperature.

  10. 1,25(OH)2D3 attenuates TGF-β1/β2-induced increased migration and invasion via inhibiting epithelial-mesenchymal transition in colon cancer cells.

    PubMed

    Chen, Shanwen; Zhu, Jing; Zuo, Shuai; Ma, Ju; Zhang, Junling; Chen, Guowei; Wang, Xin; Pan, Yisheng; Liu, Yucun; Wang, Pengyuan

    1,25-Dihydroxyvitamin D3 (1,25(OH)2D3) has been reported to inhibit proliferation and migration of multiple types of cancer cells. However, the mechanism underlying its anti-metastasis effect is not fully illustrated. In this study, the effect of 1,25(OH)2D3 on TGF-β1/β2-induced epithelial-mesenchymal transition (EMT) is tested in colon cancer cells. The results suggest that 1,25(OH)2D3 inhibited TGF-β1/β2-induced increased invasion and migration of in SW-480 and HT-29 cells. 1,25(OH)2D3 also inhibited the cadherin switch in SW-480 and HT-29 cells. TGF-β1/β2-induced increased expression of EMT-related transcription factors was also inhibited by 1,25(OH)2D3. 1,25(OH)2D3 also inhibited the secretion of MMP-2 and MMP-9 and increased expression of F-actin induced by TGF-β1/β2 in SW-480 cells. Taken together, this study suggests that the suppression of EMT might be one of the mechanisms underlying the anti-metastasis effect of 1,25(OH)2D3 in colon cancer cells.

  11. Germanium Metal - Insulator - Semiconductor Field Effect Transistors Utilizing a Germanium Nitride Gate Insulator.

    NASA Astrophysics Data System (ADS)

    Rosenberg, James Jordan

    The work presented in this thesis provides new information on three distinct but related topics. Firstly, it describes a technique for growing thin films of germanium nitride on germanium--a previously unexplored semiconductor -insulator system. Secondly, it describes electrical measurements made on metal-Ge(,3)N(,4)-Ge capacitors which demonstrate that this metal-insulator-semiconductor (MIS) system is of high quality. Thirdly, it describes a process by which n-channel germanium metal-insulator-semiconductor field effect transistors (MISFETs) have been fabricated. The motivations for exploring this new MIS system (e.g. basic physics of germanium inversion layers, higher performance MISFETs, etc.) are also described. The growth technique described here and the films produced by it possess several distinct advantages over previous methods of obtaining insulating films on germanium. The growth technique itself is simple. It involves no elaborate or expensive equipment, and is essentially identical in its execution (although not in its chemical process) to conventional techniques for obtaining an insulator on silicon (i.e. thermal oxidation of silicon). The film growth technique yields very reproducible results (in terms of film thickness and refractive index) from wafer to wafer. The physical properties of the film itself are also attractive. It is far more chemically stable than germanium oxide, and is quite process compatible. It is resistant to many chemicals encountered in typical processing cycles, but also can be readily patterned in hot phosphoric acid, which does not appreciably attack germanium. Electrical measurements on MIS capacitors indicate that the density of fast states at the germanium-germanium nitride interface is quite low. The interface state density is less than or equal to 1 x 10('11)/cm('2)-eV from midgap to within 0.15 eV of the conduction band edge, as determined by variable frequency capacitance measurements. The MISFETs fabricated for this

  12. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    SciTech Connect

    Sun, Shichuang; Fu, Kai E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun; Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing E-mail: cqchen@mail.hust.edu.cn

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  13. Anisotropic dipole polarizability of transition metal atoms: Sc(2D), Ti(3F,3P), V(4F,4P,6D), Ni(3F) and ions: Sc2+(2D), Ti2+(3F,3P).

    PubMed

    Kłos, J

    2005-07-08

    Dipole polarizability tensor components and quadrupole moments of transition-metal atoms Sc, Ti, V, Ni, and Cu and ions Sc2+ and Ti2+ are computed using finite field complete active space self-consistent field and multireference configuration interaction ab initio methods. Perpendicular components of the dipole polarizability tensor are calculated from equations involving only parallel components of the polarizability tensor and its average value. Mean polarizability and polarizability anisotropy decrease in the Sc-Ni series. Relativistic effects are accounted for with the Douglas-Kroll Hamiltonian. The consequences of the anisotropic properties of these atoms to their interactions with spherically symmetric rare gases are also discussed.

  14. Theoretical model of homogeneous metal-insulator-metal perfect multi-band absorbers for the visible spectrum

    NASA Astrophysics Data System (ADS)

    Kajtár, G.; Kafesaki, M.; Economou, E. N.; Soukoulis, C. M.

    2016-02-01

    We present a rigorous study of the perfect absorption properties of metal-insulator-metal (MIM) structures in the visible spectrum. We provide a derivation (based on the transfer matrix method) and analysis of the conditions for which the perfect absorption occurs. We show that these conditions are fulfilled when the incident wave excites the eigenmodes of the structure. The quantitative analysis allows us to design specific perfect absorbers for our needs. The analytical model is verified by rigorous simulations based on rigorous coupled wave analysis, which demonstrate also the angle and polarization insensitivity of the absorption properties of such a structure. Employing the MIM approach and results, we also investigate and demonstrate multiple perfect absorption bands and broad-band absorption in properly designed multilayer metal-insulator systems.

  15. Refractive Index Sensor Based on Fano Resonances in Metal-Insulator-Metal Waveguides Coupled with Resonators.

    PubMed

    Tang, Yue; Zhang, Zhidong; Wang, Ruibing; Hai, Zhenyin; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2017-04-06

    A surface plasmon polariton refractive index sensor based on Fano resonances in metal-insulator-metal (MIM) waveguides coupled with rectangular and ring resonators is proposed and numerically investigated using a finite element method. Fano resonances are observed in the transmission spectra, which result from the coupling between the narrow-band spectral response in the ring resonator and the broadband spectral response in the rectangular resonator. Results are analyzed using coupled-mode theory based on transmission line theory. The coupled mode theory is employed to explain the Fano resonance effect, and the analytical result is in good agreement with the simulation result. The results show that with an increase in the refractive index of the fill dielectric material in the slot of the system, the Fano resonance peak exhibits a remarkable red shift, and the highest value of sensitivity (S) is 1125 nm/RIU, RIU means refractive index unit. Furthermore, the coupled MIM waveguide structure can be integrated with other photonic devices at the chip scale. The results can provide a guide for future applications of this structure.

  16. Optical coupling and emission of metal-insulator confined circular resonators.

    PubMed

    Che, Kai-Jun; Lei, Mei-Xin; Cai, Zhi-Ping

    2013-02-25

    We numerically investigate the direct and indirect optical interactions of pair circular resonators laterally confined by metal-insulator waveguide. The direct optical interaction shows the split of quality (Q) factors of bonding and antibonding states only happens for thick insulator. The indirect optical interaction through a waveguide is proposed to control the modes resonance and collect the output emissions. The Q factors of resonant modes versus the coupling distance (width of waveguide) are studied. The results show whispering gallery modes(WGMs) engaged into interaction are strongly coupled with the guided waves of waveguide once its width is close to the cut-off width of guided waves, while the coupled mode of two WGMs is not limited by this condition. High Q factor mode, combined with a robust wide emission waveguide(close to the cut-off width of second-order guided waves), can be realized from the bonding states of WGM and coupled WGM with an added wave envelope in waveguide. In addition to the pair resonators, the studies on four resonators interacted with each other through waveguide are also addressed and wide waveguide output is anticipated.

  17. Stress-induced self-rolled metal/insulator bifilm microtube with micromesh walls

    NASA Astrophysics Data System (ADS)

    Lee, Kook-Nyung; Seo, Yeong-Tai; Lee, Min-Ho; Jung, Suk-Won; Kim, Yong-Kweon; Kim, Jung-Mu; Kyeong Seong, Woo

    2013-01-01

    A metal/insulator microtube with micromesh walls was constructed using stress-assisted self-rolling technology. The mesh-sidewall Pt/Ti/SiO2 microtube was self-formed by a tensile-stressed metal Pt/Ti film deposited onto a pre-patterned SiO2 micromesh layer. The microtube measured about 25 µm in diameter and was longer than 7 mm. The sidewall of the microtube was a square mesh, 5-20 µm long, and was electrically connected to electrical pads for electrical conductance measurement. The electrical resistance of the rolled-up microtube was measured to be 250-350 Ω when the microtube resistor's length was around 540 µm. The real-time measurement of the conductance change of the microtube with a Pt resistor could monitor the temperature change generated by heat injection. The microtube with micromesh walls is expected to be an interesting structure that has promising potential for use in electronics, chemical and biological applications.

  18. Analysis of asymmetry of Fano resonance in plasmonic metal-insulator-metal waveguide

    NASA Astrophysics Data System (ADS)

    Zafar, Rukhsar; Salim, Mohammad

    2017-02-01

    A Fano resonance has stimulated interests due to its asymmetrical resonance profile. Fano resonance generally emerges due to coupling and destructive interference between two resonating modes having disparate quality factors. This coupling between modes leads to an asymmetrical resonance profile which makes Fano resonance quite distinct from the traditional Lorentzian profile. Asymmetry is a key feature of Fano resonance. It is examined using Complex plane analysis and redefined using Reflection Argand diagram. The newly defined parameter named as Argand Asymmetric ratio (ρ) is in line with the previously defined asymmetrical factor of Fano resonance. This newly defined parameter (ρ) is also studied against coupling and frequency detuning between resonating modes. The parameter is also numerically investigated by exciting Fano resonance in a pair of resonators coupled MIM (Metal-Insulator-Metal) waveguide using the OptiFDTD tool. The newly defined parameter can find its way in analyzing different Fano resonance based applications like as optical buffers, sign reversal Fano tuning, switches, modulators, etc.

  19. AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Seo, Sanghyun; Ghose, Kaustav; Zhao, Guang Yuan; Pavlidis, Dimitris

    AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1μm gate length and 200μm gate width showed a maximum drain current density of ˜380mA/mm and a peak extrinsic transconductance of 85mS/mm. S-parameter measurements showed that currentgain cutoff frequency (fT) and maximum oscillation frequency (fmax) were 5.85GHz and 10.57GHz, respectively. Power characteristics were measured at 2GHz and showed output power density of 850mW/mm with 23.8% PAE at VDS=15V. To the authors knowledge this is the first report of a systematic study of AlN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance.

  20. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  1. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil.

    PubMed

    Yang, D G; Choi, Y H; Kim, Y G; Song, J B; Lee, H G

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25I(c)), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid.

  2. Elastoplasmonic interaction in metal-insulator-metal localized surface plasmon systems

    NASA Astrophysics Data System (ADS)

    Mrabti, Abdelali; Lévêque, Gaëtan; Akjouj, Abdellatif; Pennec, Yan; Djafari-Rouhani, Bahram; Nicolas, Rana; Maurer, Thomas; Adam, Pierre-Michel

    2016-08-01

    We investigate theoretically and numerically the coupling between elastic and localized surface plasmon modes in a system of gold nanocylinders separated from a thin gold film by a dielectric spacer of few nanometers thickness. That system supports plasmon modes confined in between the bottom of the nanocylinder and the top of the gold film, which arise from the formation of interference patterns by short-wavelength metal-insulator-metal propagating plasmon. First, we present the plasmonic properties of the system though computer-simulated extinction spectra and field maps associated to the different optical modes. Next, a simple analytical model is introduced, which allows to correctly reproduce the shape and wavelengths of the plasmon modes. This model is used to investigate the efficiency of the coupling between an elastic deformation and the plasmonic modes. In the last part of the paper, we present the full numerical simulations of the elastic properties of the system, and then compute the acousto-plasmonic coupling between the different plasmon modes and five acoustic modes of very different shape. The efficiency of the coupling is assessed first by evaluating the modulation of the resonance wavelength, which allows comparison with the analytical model, and finally in term of time-modulation of the transmission spectra on the full visible range, computed for realistic values of the deformation of the nanoparticle.

  3. Fluoride dielectric films on InP for metal-insulator-semiconductor applications

    NASA Astrophysics Data System (ADS)

    Paul, T. K.; Bose, D. N.

    1990-04-01

    This paper describes the characteristics of thin fluoride films on InP which are used as dielectric for metal-insulator-semiconductor (MIS) devices. Films of Ba1-xSrxF2 (x=0.0, 0.5, 0.83, and 1.0) were deposited by sublimation of mixtures of BaF2 and SrF2 in vacuum under 10-5 Torr pressure. The composition of the films was deduced from x-ray diffraction and energy dispersion analysis by x-ray studies. The electrical activation energies of the films determined between 120 and 300 K were found to be 3.5-22.0×10-3 eV , depending on composition and temperature. The resistivity of the films was in the range of 5.0×1011 to 5.0×1012 Ω cm with the breakdown fields greater than 5.0×105 V cm-1 . The interface state density obtained was as low as 5×1010 cm-2 eV-1 with annealed BaF2 films. Scanning electron microscope studies showed that annealing caused development of cracks resulting in decreased film resistivity. Auger studies gave evidence of broadening of the interface and outdiffusion from the substrate due to annealing.

  4. Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Eisenstein, G.

    2016-12-01

    We report a strong negative capacitance effect in back to back combination of a metal-insulator-semiconductor (MIS) structure and a metal-semiconductor junction, which is fabricated on an n type Silicon-on-Insulator substrate. The MIS capacitor comprises a SiO2-HfO2 insulator stack with embedded Pt nanoparticles. The capacitor undergoes a voltage stress process and thereby turns into a varactor and a photodetector. The negative capacitance is observed only under illumination in structures that employ a Schottky back contact. A symmetric double or an asymmetric single negative capacitance peak is observed depending on the nature of illumination. The phenomenon is attributed to the modulation of the semiconductor conductance due to photo generated carriers and their incorporation in trapping/de-trapping processes on interfacial and post filamentation induced defects in the insulator stack. The frequency range of the observed effect is limited to 100 kHz. Large ratios of light to dark and maximum to minimum of negative capacitances as well as of the obtained sensitivity to the applied voltage are, respectively, 105, more than 100, and 10-15. These were measured at 10 kHz under illumination at 365 nm with a power of 2.5 × 10-6 W.

  5. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    PubMed

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  6. Reflective plasmonic waveplates based on metal-insulator-metal subwavelength rectangular annular arrays

    NASA Astrophysics Data System (ADS)

    Chen, Zhonghui; Wang, Chinhua; Xu, Fuyang; Lou, Yimin; Cao, Bing; Li, Xiaofeng

    2014-04-01

    We propose and present a quarter-wave plate using metal-insulator-metal (MIM) structure with sub-wavelength rectangular annular arrays (RAA) patterned in the upper Au film. It is found that by manipulating asymmetric width of the annular gaps along two orthogonal directions, the reflected amplitude and phase of the two orthogonal components can be well controlled via the RAA metasurface tuned by the MIM cavity effect, in which the localized surface plasmon resonance dip can be flattened with the cavity length. A quarter-wave plate has been realized through an optimized design at 1.55 μm, in which the phase difference variation of less than 2% of the π/2 between the two orthogonal components can be obtained in an ultra-wide wavelength range of about 130 nm, and the reflectivity is up to ˜90% within the whole working wavelength band. It provides a great potential for applications in advanced nanophotonic devices and integrated photonic systems.

  7. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  8. Metal-insulator-metal diodes towards THz and optical energy harvesting: Development of materials design principles

    NASA Astrophysics Data System (ADS)

    Periasamy, Prakash

    Metal-Insulator-Metal (MIM) structures are attractive candidates for high-frequency rectification applications such as THz imaging and sensors, and infrared/visible energy harvesting (rectenna) devices. This thesis develops materials selection principles to guide the choice of material pairs for MIM stacks with desired rectification performance. In particular, a first-of-its kind MIM materials space map is developed that correlates materials properties to rectification performance for different MIM combinations. The materials space diagram is generated based on systematic experimental studies that explore the role of both the metals and the insulator in the MIM stack in determining MIM device performance by evaluating the current-voltage response of a combinatorial set of MIM materials at low frequencies. A novel modified point-contact geometry is developed to rapidly examine a number of MIM material combinations. Material properties such as work function (phiM) of the metals and electron affinity (chi) of the insulator, as well as the thermodynamic chemical stability of the interface are identified as crucial elements for MIM materials selection. Investigations performed to identify the role of metals revealed that it is sufficient to choose the metals such that their Deltaphi is > ~ 300 meV to achieve desired rectification characteristics (high asymmetry and nonlinearity). Using the Nb/Nb2O5 bilayer as the model system, the asymmetry and the nonlinearity were found to be only weakly dependent on Deltaphi above ˜ 0.4 eV. A hypothesis is developed and tested that guides the insulator selection criteria. The proposed hypothesis states that, "to minimize the turn-on voltage and maximize asymmetry and nonlinearity, the electron affinity of the insulator should be close to one of the metal work function values so as to produce a low barrier height". Although the study validated the hypothesis across the material systems studied, preliminary experiments on two

  9. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  10. Negative differential resistance and bias-modulated metal-to-insulator transition in zigzag C2N-h2D nanoribbon

    PubMed Central

    He, Jing-Jing; Guo, Yan-Dong; Yan, Xiao-Hong

    2017-01-01

    Motivated by the fabrication of layered two-dimensional material C2N-h2D [Nat. Commun. 6, 6486 (2015)], we cut the single-layer C2N-h2D into a zigzag nanoribbon and perform a theoretical study. The results indicate that the band structure changes from semiconducting to metallic and a negative differential resistance effect occurs in the I-V curve. Interestingly, the current can be reduced to zero and this insulator-like state can be maintained as the bias increases. We find this unique property is originated from a peculiar band morphology, with only two subbands appearing around the Fermi level while others being far away. Furthermore the width and symmetry of the zigzag C2N-h2D nanoribbon can be used to tune the transport properties, such as cut-off bias and the maximum current. We also explore the electron transport property of an aperiodic model composed of two nanoribbons with different widths and obtain the same conclusion. This mechanism can be extended to other systems, e.g., hybrid BCN nanoribbons. Our discoveries suggest that the zigzag C2N-h2D nanoribbon has great potential in nanoelectronics applications. PMID:28382947

  11. Hartree-Fock Solutions of 2d Interacting Tight-Binding Electrons: Mott Properties and Room Temperature Superconductivity Indications

    NASA Astrophysics Data System (ADS)

    Cabo Montes de Oca, A.; March, N. H.; Cabo-Bizet, A.

    2014-12-01

    Former results for a tight-binding (TB) model of CuO planes in La2CuO4 are reinterpreted here to underline their wider implications. It is noted that physical systems being appropriately described by the TB model can exhibit the main strongly correlated electron system (SCES) properties, when they are solved in the HF approximation, by also allowing crystal symmetry breaking effects and noncollinear spin orientations of the HF orbitals. It is argued how a simple 2D square lattice system of Coulomb interacting electrons can exhibit insulator gaps and pseudogap states, and quantum phase transitions as illustrated by the mentioned former works. A discussion is also presented here indicating the possibility of attaining room temperature superconductivity, by means of a surface coating with water molecules of cleaved planes of graphite, being orthogonal to its c-axis. The possibility that 2D arrays of quantum dots can give rise to the same effect is also proposed to consideration. The analysis also furnishes theoretical insight to solve the Mott-Slater debate, at least for the La2CuO4 and TMO band structures. The idea is to apply a properly noncollinear GW scheme to the electronic structure calculation of these materials. The fact is that the GW approach can be viewed as a HF procedure in which the screening polarization is also determined. This directly indicates the possibility of predicting the assumed dielectric constant in the previous works. Thus, the results seem to identify that the main correlation properties in these materials are determined by screening. Finally, the conclusions also seem to be of help for the description of the experimental observations of metal-insulator transitions and Mott properties in atoms trapped in planar photonic lattices.

  12. Modeling of all-optical even and odd parity generator circuits using metal-insulator-metal plasmonic waveguides

    NASA Astrophysics Data System (ADS)

    Singh, Lokendra; Bedi, Amna; Kumar, Santosh

    2017-01-01

    Plasmonic metal-insulator-metal (MIM) waveguides sustain excellent property of confining the surface plasmons up to a deep subwavelength scale. In this paper, linear and S-shaped MIM waveguides are cascaded together to design the model of Mach-Zehnder interferometer (MZI). Nonlinear material has been used for switching of light across its output ports. The structures of even and odd parity generators are projected by cascading the MZIs. Parity generator and checker circuit are used for error correction and detection in an optical communication system. Study and analysis of proposed designs are carried out by using the MATLAB simulation and finite-differencetime-domain (FDTD) method.

  13. Perfect absorbers based on metal-insulator-metal structures in the visible region: a simple approach for practical applications

    NASA Astrophysics Data System (ADS)

    Kenanakis, G.; Mavidis, Ch. P.; Vasilaki, E.; Katsarakis, N.; Kafesaki, M.; Economou, E. N.; Soukoulis, C. M.

    2017-01-01

    Perfect absorbers based on metal-insulator-metal (MIM) structures are proposed and demonstrated, both theoretically and experimentally, in the visible region. The proposed structures may possess either sharp or broadband absorption peaks, by simply choosing a single layer of the proposed MIM structure or building several layers of them, while no nanofabrication steps or structure patterning are required, and thus can be easily made to cover a large area. The highly efficient absorption of the MIM structures is maintained for both TE and TM incident polarization, and for angles of incidence up to 75°, indicating that the proposed perfect absorbers can be potentially deployed for solar cells applications and optics.

  14. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  15. Improving field enhancement of 2D hollow tapered waveguides via dielectric microcylinder coupling

    NASA Astrophysics Data System (ADS)

    Chen, Yongzhu; Xie, Xiangsheng; Li, Li; Chen, Gengyan; Guo, Lina; Lin, Xusheng

    2015-02-01

    We numerically study a novel scheme to improve the field enhancement of 2D hollow tapered waveguides (HTWs). A dielectric microcylinder is embedded into a metal-insulator-metal (MIM) HTW for resonant exciting gap surface plasmons (GSPs), which is different from the lowest propagating mode (TM0) excitation via the conventional fire-end coupling method. The physical mechanism of the field enhancement and the influence of critical parameters such as numerical aperture (NA) of the lens, permittivity of the microcylinder and the incident wavelength are discussed. The substantial improvement of the GSP excitation efficiency via dielectric microcylinder coupling shows potential in designing tapered MIM waveguides for nanofocusing and field enhancement.

  16. Observation of the hyperfine structure of the {sup 2}S{sub 1/2}-{sup 2}D{sub 5/2} transition in {sup 87}Sr{sup +}

    SciTech Connect

    Barwood, G.P.; Gao, K.; Gill, P.; Huang, G.; Klein, H.A.

    2003-01-01

    The hyperfine structure of the {sup 2}S{sub 1/2}-{sup 2}D{sub 5/2} quadrupole transition at 674 nm in {sup 87}Sr{sup +} has been observed. The ion was confined in a Paul trap and cooled using laser radiation at 422 and 1092 nm. The quadrupole transition was observed by monitoring quantum jumps in the 422-nm fluorescence. The odd isotope of strontium has 'clock' transitions independent of the first-order Zeeman shift and the {sup 2}D{sub 5/2} state hyperfine structure constants have been determined as A{sub D{sub 5/2}}=2.1743(14) MHz and B{sub D{sub 5/2}}=49.11(6) MHz. Standard uncertainties have been added in parentheses. These values allow the second-order Zeeman shifts to be calculated. The {sup 88}Sr{sup +}-{sup 87}Sr{sup +} isotope shift for the 674-nm quadrupole transition has been measured to be 247.99(4) MHz.

  17. Anderson transition in ultracold atoms: Signatures and experimental feasibility

    SciTech Connect

    Garcia-Garcia, Antonio M.; Wang Jiao

    2006-12-15

    Kicked rotators with certain nonanalytic potentials avoid dynamical localization and undergo a metal-insulator transition. We show that typical properties of this transition are still present as the nonanalyticity is progressively smoothed out provided that the smoothing is less than a certain limiting value. We have identified a smoothing-dependent time scale such that full dynamical localization is absent and the quantum momentum distribution develops power-law tails with anomalous decay exponents as in the case of a conductor at the metal-insulator transition. We discuss under what conditions these findings may be verified experimentally by using ultracold atom techniques. It is found that ultracold atoms can indeed be utilized for the experimental investigation of the metal-insulator transition.

  18. Exotic quantum phase transitions of 2+1d Dirac fermions, and connections to 2d and 3d topological insulators

    NASA Astrophysics Data System (ADS)

    Slagle, Kevin

    2015-03-01

    Using determinant quantum Monte Carlo simulations, we demonstrate that an extended Hubbard model on a bilayer honeycomb lattice has two novel quantum phase transitions, each with connections to symmetry protected topological states. 1) The first is a continuous phase transition between the weakly interacting gapless Dirac fermion phase and a strongly interacting fully gapped and symmetric trivial phase. Because there is no spontaneous symmetry breaking, this transition cannot be described by the standard Gross-Neveu model. We argue that this phase transition is related to the Z16 classification of the topological superconductor 3He-B phase with interactions. 2) The second is a quantum critical point between a quantum spin Hall insulator with spin Sz conservation and the previously mentioned strongly interacting gapped phase. At the critical point the single particle excitations remain gapped, while spin and charge gaps close. We argue that this transition is described by a bosonic O(4) nonlinear sigma model field theory with a topological Θ-term.

  19. Fingerprints of the field-induced Berezinskii-Kosterlitz-Thouless transition in quasi-two-dimensional quantum magnets

    NASA Astrophysics Data System (ADS)

    Orendáčová, Alžbeta

    The two-dimensional (2d) easy-plane (XY) model provides a prototypical description of 2d systems exhibiting topological excitations, which drive the Berezinskii-Kosterlitz-Thouless (BKT) transition that occurs in 2d superfluids, electron plasmas, Josephson junction arrays, ultracold atomic 2d Bose gasses, etc. The excitations in the 2d XY model are spin waves and vortices. In the BKT scenario, at low temperatures, all vortices (V) and antivortices (AV) are bound to V-AV pairs, and spin waves dominate in this quasi-long-range-ordered phase with an infinite correlation length, ξ, and an algebraic decay of correlations. At a critical temperature, TBKT, the V-AV pairs start to unbind, driving the transition to a free vortex phase above TBKT, characterized by an exponential divergence of ξ. Vortices remain stable also in quantum 2d anisotropic Heisenberg systems with a very weak XY anisotropy. The BKT scenario appears even in 2d isotropic Heisenberg magnets due to frustration or an external magnetic field. I will focus on quasi-2d spin 1/2 Heisenberg antiferromagnets with extremely weak spin anisotropy. These highly anisotropic layered Cu(II) organo-metallic insulators with relatively low saturation fields, about 6 T, enabled a comprehensive study in a wide range of magnetic fields and temperatures. A response of all compounds to the application of a magnetic field mimics 2d behavior with fingerprints of a field-induced Berezinskii-Kosterlitz-Thouless phase transition. ITMS 26220120005, VEGA 1/0143/13 and APVV-14-0073 are acknowledged for a financial support.

  20. The Langley Stability and Transition Analysis Code (LASTRAC) : LST, Linear and Nonlinear PSE for 2-D, Axisymmetric, and Infinite Swept Wing Boundary Layers

    NASA Technical Reports Server (NTRS)

    Chang, Chau-Lyan

    2003-01-01

    During the past two decades, our understanding of laminar-turbulent transition flow physics has advanced significantly owing to, in a large part, the NASA program support such as the National Aerospace Plane (NASP), High-speed Civil Transport (HSCT), and Advanced Subsonic Technology (AST). Experimental, theoretical, as well as computational efforts on various issues such as receptivity and linear and nonlinear evolution of instability waves take part in broadening our knowledge base for this intricate flow phenomenon. Despite all these advances, transition prediction remains a nontrivial task for engineers due to the lack of a widely available, robust, and efficient prediction tool. The design and development of the LASTRAC code is aimed at providing one such engineering tool that is easy to use and yet capable of dealing with a broad range of transition related issues. LASTRAC was written from scratch based on the state-of-the-art numerical methods for stability analysis and modem software technologies. At low fidelity, it allows users to perform linear stability analysis and N-factor transition correlation for a broad range of flow regimes and configurations by using either the linear stability theory (LST) or linear parabolized stability equations (LPSE) method. At high fidelity, users may use nonlinear PSE to track finite-amplitude disturbances until the skin friction rise. Coupled with the built-in receptivity model that is currently under development, the nonlinear PSE method offers a synergistic approach to predict transition onset for a given disturbance environment based on first principles. This paper describes the governing equations, numerical methods, code development, and case studies for the current release of LASTRAC. Practical applications of LASTRAC are demonstrated for linear stability calculations, N-factor transition correlation, non-linear breakdown simulations, and controls of stationary crossflow instability in supersonic swept wing boundary

  1. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Differential conductance in a normal metal/insulator/metal/d-wave superconductor junction carrying a supercurrent

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Wei

    2009-12-01

    This paper applies the Bogoliubov-de Gennes equation and the Blonder-Tinkham-Klapwijk approach to study the oscillatory behaviour of differential conductance in a normal metal/insulator/metal/d-wave superconductor junction carrying a supercurrent Is. We find that (i) a three-humped structure appears at a nearly critical supercurrent Is and z approx 0.5 for the normal metal/insulator/metal/dx2+y2-wave superconductor junction; (ii) the zero-bias conductance peak splits into two peaks with sufficiently large applied current for the normal metal/insulator/metal/dxy-wave superconductor junction; (iii) the conductance spectrum exhibits oscillating behaviour with the bias voltage and the peaks of the resonances are suppressed by increasing supercurrent Is.

  2. Isotope shifts of the 6d{sup 2} D{sub 3/2}-7 p{sup 2} P{sub 1/2} transition in trapped short-lived {sup 209-214}Ra{sup +}

    SciTech Connect

    Giri, G. S.; Versolato, O. O.; Berg, J. E. van den; Boell, O.; Dammalapati, U.; Hoek, D. J. van der; Jungmann, K.; Kruithof, W. L.; Mueller, S.; Nunez Portela, M.; Onderwater, C. J. G.; Santra, B.; Timmermans, R. G. E.; Wansbeek, L. W.; Willmann, L.; Wilschut, H. W.

    2011-08-15

    Laser spectroscopy of short-lived radium isotopes in a linear Paul trap has been performed. The isotope shifts of the 6d{sup 2} D{sub 3/2} -7 p{sup 2} P{sub 1/2} transition in {sup 209-214}Ra{sup +}, which are sensitive to the short-range part of the atomic wave functions, were measured. The results are essential experimental input for improving the precision of atomic structure calculations. This is indispensable for parity violation in Ra{sup +} aiming at the determination of the weak mixing angle.

  3. Evolution of 2D deuterium and impurity radiation profiles during transitions from attached to detached divertor operation in DIII-D

    SciTech Connect

    Fenstermacher, M.E.; Allen, S.L.; Hill, D.N.

    1998-08-01

    This paper presents the detailed evolution of conditions along both the inner and outer divertor legs during the transition from attached ELMing H-mode to partially detached divertor (PDD) operation in DIII-D. Visible emission profiles in a poloidal plane show that in ELMing H-mode prior to deuterium gas injection, CIII emission peaks in the inner SOL near the X-point and deuterium emission (from ionization and recombination) peaks at the inner target plate near the inner strike point (ISP). The spatial profiles of the recombination and ionization zones, determined by forming images of the ratio of intensities from simultaneous images of D{sub {alpha}} and D{sub {gamma}} emission, show that recombination dominates the inner leg emission near the target; ionization dominates in a poloidally narrow zone upstream in the inner leg. After deuterium injection, when the PDD transition begins, the profiles of carbon visible emission show first an increase in the inner SOL near the X-point, followed by increases in emission in the lower regions of the outer leg. Deuterium emission at the transition onset decreases at th4e ISP and increases across the private flux region below the X-point. As the transition to PDD conditions proceeds the deuterium emission increases in the private flux region; recombination dominates near the floor and ionization higher near the X-point. Carbon emission appears along both divertor legs and at the X-point. In the final quasi-steady PDD state, the recombination emission in the outer leg is near the separatrix and along the target plate; emission from collisional excitation dominates in the upper part of the outer leg just below the X-point, and carbon emission is localized at the X-point. These results suggest that transport of neutral deuterium between the inner and outer divertor legs through the private flux region plays an important role in the initiation of outer leg detachment in DIII-D.

  4. Enhanced spin-dependent parity-nonconservation effect in the 7 s 1/2 2S →6 d 5/2 2D transition in Fr: A possibility for unambiguous detection of the nuclear anapole moment

    NASA Astrophysics Data System (ADS)

    Sahoo, B. K.; Aoki, T.; Das, B. P.; Sakemi, Y.

    2016-03-01

    Employing the relativistic coupled-cluster method, comparative studies of the parity nonconserving electric dipole amplitudes for the 7 s 1/2 2S →6 d 5/2 2D transitions in 210Fr and 211Fr isotopes have been carried out. It is found that these transition amplitudes, sensitive only to the nuclear spin-dependent effects, are enhanced substantially owing to the very large contributions from the electron core-polarization effects in Fr. This translates to a relatively large and, in principle, measurable induced light shift, which would be a signature of nuclear spin-dependent parity nonconservation that is dominated by the nuclear anapole moment in a heavy atom like Fr. A plausible scheme to measure this quantity using the Cyclotron and Radioisotope Center (CYRIC) facility at Tohoku University has been outlined.

  5. Unusual Magnetic Phase Transition of 2D Kagomé Compound Cu3 (CO3) (bpe)3 ·2ClO4

    NASA Astrophysics Data System (ADS)

    Kikuchi, Hikomitsu; Fujii, Yutaka; Nakata, Hayato; Taniguchi, Toshifumi; Zhang, Weimin; Okubo, Susumu; Ohta, Hitoshi

    Cu3 (CO3)(bpe)3·2ClO4 (bpe = 1,2-bis(4-pyridyl)etane) is a two dimensional geometrically frustrated magnet with an S = 1/2 slightly distorted kagomé lattice. We measured dc magnetization, ac magnetic susceptibility, field dependence of the specific heat, nuclear magnetic resonance (NMR) and electron spin resonance (ESR) spectra of powder sample of this compound to investigate its magnetic properties in detail. Although dc and ac magnetization data suggest the occurrence of ferromagnetic order at approximately 8 K, no anomaly in specific heat was observed at this temperature. The 1H-NMR spectra of the sample drastically broaden at temperatures below approximately 10 K, suggesting the rapid development of internal magnetic field. Furthermore, the high field ESR spectra show anomalies below approximately 20 K. Contrary to conventional magnetic transitions, the magnetic transition in this compound is not accompanied by a distinct anomaly of specific heat. We have discussed possible reasons for the non-observance of specific heat anomaly.

  6. The Spitzer c2d Survey of Weak-line T Tauri Stars. III. The Transition from Primordial Disks to Debris Disks

    NASA Astrophysics Data System (ADS)

    Wahhaj, Zahed; Cieza, Lucas; Koerner, David W.; Stapelfeldt, Karl R.; Padgett, Deborah L.; Case, April; Keller, James R.; Merín, Bruno; Evans, Neal J., II; Harvey, Paul; Sargent, Anneila; van Dishoeck, Ewine F.; Allen, Lori; Blake, Geoff; Brooke, Tim; Chapman, Nicholas; Mundy, Lee; Myers, Philip C.

    2010-12-01

    We present 3.6 to 70 μm Spitzer photometry of 154 weak-line T Tauri stars (WTTSs) in the Chamaeleon, Lupus, Ophiuchus, and Taurus star formation regions, all of which are within 200 pc of the Sun. For a comparative study, we also include 33 classical T Tauri stars which are located in the same star-forming regions. Spitzer sensitivities allow us to robustly detect the photosphere in the IRAC bands (3.6 to 8 μm) and the 24 μm MIPS band. In the 70 μm MIPS band, we are able to detect dust emission brighter than roughly 40 times the photosphere. These observations represent the most sensitive WTTSs survey in the mid- to far-infrared to date and reveal the frequency of outer disks (r = 3-50 AU) around WTTSs. The 70 μm photometry for half the c2d WTTSs sample (the on-cloud objects), which were not included in the earlier papers in this series, those of Padgett et al. and Cieza et al., are presented here for the first time. We find a disk frequency of 19% for on-cloud WTTSs, but just 5% for off-cloud WTTSs, similar to the value reported in the earlier works. WTTSs exhibit spectral energy distributions that are quite diverse, spanning the range from optically thick to optically thin disks. Most disks become more tenuous than L disk/L * = 2 × 10-3 in 2 Myr and more tenuous than L disk/L * = 5 × 10-4 in 4 Myr.

  7. The N(^2D - ^4S) 520 nm forbidden doublet transition in the nightglow: An experimental test of the theoretical intensity ratio

    NASA Astrophysics Data System (ADS)

    Slanger, T. G.; Cosby, P. C.; Huestis, D. L.

    2003-04-01

    N(^2D) is an important species in the nighttime ionosphere, as its reaction with O_2 is a principal source of NO. Its modeled concentration peaks near 200 km, at approximately 4 × 10^5 cm-3. Nightglow emission in the optically forbidden lines at 519.8 and 520.0 nm is quite weak, a consequence of the combination of an extremely long radiative lifetime, about 10^5 sec, and quenching by O-atoms, O_2, and N_2. The radiative lifetime is known only from theory, and various calculations lead to a range of possible values for the intensity ratio R = I(519.8)/I(520.0) of 1.5-2.5. On the observational side, Hernandez and Turtle [1969] determined a range of R = 1.3-1.9 in the nightglow, and Sivjee et al. [1981] reported a variable ratio in aurorae, between 1.2 and 1.6. From sky spectra obtained at the Keck II telescope on Mauna Kea, we have accumulated eighty-five 30-60 minute data sets, from March and October, 2000, and April, 2001, over 13 nights of astronomical observations. We find R to have a quite precise value of 1.760± 0.012 (2-σ). There is no difference between the three data sets in terms of the extracted ratio, which therefore seems to be independent of external conditions. At the same time, determination of the O(^1D - ^3P) doublet intensity ratio, I(630.0)/I(636.4), gives a value of 3.03 ± 0.01, the statistical expectation. G. Hernandez and J. P. Turtle, Planet. Space Sci. 17, 675, 1969. G. G. Sivjee, C. S. Deehr, and K. Henricksen, J. Geophys. Res. 86, 1581, 1981.

  8. THE SPITZER c2d SURVEY OF WEAK-LINE T TAURI STARS. III. THE TRANSITION FROM PRIMORDIAL DISKS TO DEBRIS DISKS

    SciTech Connect

    Wahhaj, Zahed; Cieza, Lucas; Koerner, David W.; Case, April; Stapelfeldt, Karl R.; Chapman, Nicholas; Padgett, Deborah L.; Brooke, Tim; Keller, James R.; MerIn, Bruno; Evans, Neal J.; Harvey, Paul; Sargent, Anneila; Van Dishoeck, Ewine F.; Allen, Lori; Blake, Geoff; Mundy, Lee; Myers, Philip C.

    2010-12-01

    We present 3.6 to 70 {mu}m Spitzer photometry of 154 weak-line T Tauri stars (WTTSs) in the Chamaeleon, Lupus, Ophiuchus, and Taurus star formation regions, all of which are within 200 pc of the Sun. For a comparative study, we also include 33 classical T Tauri stars which are located in the same star-forming regions. Spitzer sensitivities allow us to robustly detect the photosphere in the IRAC bands (3.6 to 8 {mu}m) and the 24 {mu}m MIPS band. In the 70 {mu}m MIPS band, we are able to detect dust emission brighter than roughly 40 times the photosphere. These observations represent the most sensitive WTTSs survey in the mid- to far-infrared to date and reveal the frequency of outer disks (r = 3-50 AU) around WTTSs. The 70 {mu}m photometry for half the c2d WTTSs sample (the on-cloud objects), which were not included in the earlier papers in this series, those of Padgett et al. and Cieza et al., are presented here for the first time. We find a disk frequency of 19% for on-cloud WTTSs, but just 5% for off-cloud WTTSs, similar to the value reported in the earlier works. WTTSs exhibit spectral energy distributions that are quite diverse, spanning the range from optically thick to optically thin disks. Most disks become more tenuous than L{sub disk}/L{sub *} = 2 x 10{sup -3} in 2 Myr and more tenuous than L{sub disk}/L{sub *} = 5 x 10{sup -4} in 4 Myr.

  9. Anisotropic magneto-resistance of 2D holes in GaAs/Al_xGa_1-xAs heterostructure under in-plane magnetic field

    NASA Astrophysics Data System (ADS)

    Noh, H.; Tsui, D. C.; Shayegan, M.; Yoon, Jongsoo

    2000-03-01

    We report on measurements of anisotropic in-plane magneto-resistance of the 2D hole system (2DHS) in a GaAs/AlGaAs (311)A heterostructure, which exhibits both zero-field and in-plane field induced metal-insulator transitions. For high hole densities, when the direction of B field is changed relative to the current(I), which is always kept in the high mobility direction, the resistivity with B allel I is larger at low field, while the resistivity with B ⊥ I becomes larger at high field. This behavior is consistent with recent measurements(S. J. Papadakis et al.), cond-mat/9911239. on a quantum well system. That the resistivity at high field is larger for B ⊥ I than for B allel I is also consistent with a recent theoretical argument(S. Das Sarma and E. H. Hwang, cond-mat/9909452.), though the difference is smaller than that from the theory. As the density is lowered, the resistivity with B allel I gets larger at high field, and it eventually becomes greater than that with B ⊥ I at all field ranges measured. This change in anisotropy has not been seen in previous measurements. The critical field B_c, beyond which the metallic phase becomes insulating, is also different for two different directions of B, while the change in I-V characteristics across Bc remains the same.

  10. [D-Ala2,D-Leu5]-enkephalin (DADLE) and morphine-induced postconditioning by inhibition of mitochondrial permeability transition pore, in human myocardium.

    PubMed

    Fuardo, Marinella; Lemoine, Sandrine; Lo Coco, Claudia; Hanouz, Jean Luc; Massetti, Massimo

    2013-04-01

    The aim of the study was to examine the cardioprotective effect of morphine and Delta 2 opioid D-Ala2-Leu5 enkephalin(DADLE) administered, at early reoxygenation, in isolated human myocardium exposed to hypoxia–reoxygenation. Then,we tested the involvement of mitochondrial permeability transition pore in morphine and DADLE-induced postconditioning.Human right atrial trabeculae were obtained during cardiac surgery (coronary artery bypass and aortic valve replacement).Isometrically contracting isolated human right atrial trabeculae were exposed to 30-min hypoxia and 60-min reoxygenation(control group). In treatment groups, morphine 0.5 mmol, DADLE 10 nmol, DADLE 50 nmol and DADLE 100 nmol were administered during the first 15 min of reoxygenation. In two additional groups, morphine and DADLE 100 nmol were administered in the presence of atractyloside 50 mmol, the mitochondrial permeability transition pore opener. The force of contraction at the end of 60-min reoxygenation period (FoC60 expressed as % of baseline) was compared (mean+standard deviation) between the groups by an analysis of variance. Morphine (FoC60: 81+9% of baseline), DADLE50 nmol (FoC60: 76+11% of baseline) and DADLE 100 nmol (FoC60: 81+4% of baseline) increased significantly (P,0.001) the FoC60 as compared with the control group (FoC60: 53+3% of baseline). DADLE 10 nmol did not modify the FoC60 (50+9% of baseline; P ¼ 0.60 versus control group). The enhanced recovery of FoC60 induced by morphine and DADLE 100 nmol were abolished in the presence of atractyloside (FoC60: respectively 57+6% and 44+7% of baseline;P, 0.001). In conclusion, the administration of morphine and DADLE, in early reoxygenation period, protected human myocardium, in vitro, against hypoxia–reoxygenation injury, at least in part, by the inhibition of mitochondrial permeability transition pore opening.

  11. Fano Resonance Based on Metal-Insulator-Metal Waveguide-Coupled Double Rectangular Cavities for Plasmonic Nanosensors

    PubMed Central

    Zhang, Zhidong; Luo, Liang; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2016-01-01

    A refractive index sensor based on metal-insulator-metal (MIM) waveguides coupled double rectangular cavities is proposed and investigated numerically using the finite element method (FEM). The transmission properties and refractive index sensitivity of various configurations of the sensor are systematically investigated. An asymmetric Fano resonance lineshape is observed in the transmission spectra of the sensor, which is induced by the interference between a broad resonance mode in one rectangular and a narrow one in the other. The effect of various structural parameters on the Fano resonance and the refractive index sensitivity of the system based on Fano resonance is investigated. The proposed plasmonic refractive index sensor shows a maximum sensitivity of 596 nm/RIU. PMID:27164101

  12. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    SciTech Connect

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M.

    2014-11-03

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  13. Attenuated total reflection response to wavelength tuning of plasmon-induced transparency in a metal-insulator-metal structure.

    PubMed

    Matsunaga, Kouki; Watanabe, Takeshi; Neo, Yoichiro; Matsumoto, Takahiro; Tomita, Makoto

    2016-11-15

    We experimentally demonstrated a plasmon-induced transparency in a metal-insulator-metal (MIM) structure based on the attenuated total reflection (ATR) response. Here, the MIM waveguide (MIMWG) mode and the surface plasmon polariton (SPP) resonance mode acted as low- and high-Q resonance modes, respectively. The dependence of the resonance angles of SPP and MIMWG mode resonances on the incident wavelength differed, which allowed the coupling condition between the two modes to be tuned via the wavelength. When the resonance angles of the two modes coincided, the ATR response showed a symmetric plasmon-induced transparency spectrum; in contrast, when the resonance angles were detuned, the ATR exhibited a sharp asymmetric spectrum characteristic to off-resonance Fano interference.

  14. High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer.

    PubMed

    Lee, Ming-Lun; Mue, T S; Huang, F W; Yang, J H; Sheu, J K

    2011-06-20

    In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaO(x) gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (R(UV/vis)) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the R(UV/vis) with bias voltage up to ~10(5). The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.

  15. Temperature-driven disorder-order transitions in 2D copper-intercalated MoO3 revealed using dynamic transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Reed, Bryan W.; Chung, Frank R.; Wang, Mengjing; LaGrange, Thomas; Koski, Kristie J.

    2014-12-01

    We demonstrate two different classes of disorder-order phase transitions in two-dimensional layered nanomaterial MoO3 intercalated with ˜9-15 atomic percent zero-valent copper using conventional in situ electron diffraction and dynamic transmission electron microscopy. Heating to ˜325 °C on a time scale of minutes produces a superlattice consistent with the formation of a charge density wave stabilized by nanometer-scale ordering of the copper intercalant. Unlike conventional purely electronic charge-density-wave states which form, reform, and disappear on picosecond scales as the temperature is changed, once it forms the observed structure in Cu-MoO3 is stable indefinitely over a very large temperature range (30 °C to the decomposition temperature of 450 °C). Nanosecond-scale heating to ˜380-400 °C produced a completely different structure, replacing the disordered as-fabricated Cu-MoO3 with a much more crystallographically ordered metastable state that, according to a precession electron diffraction reconstruction, resembles the original MoO3 lattice apart from an asymmetric distortion that appears to expand parts of the van der Waals gaps to accommodate the copper intercalant. Control experiments in Cu-free material exhibited neither transformation, thus it appears the copper is a necessary part of the phase dynamics. This work shows how the combination of high-density metal atom intercalation and heat treatment over a wide range of time scales can produce nanomaterials of high crystalline quality in unique structural states that cannot be accessed through other methods.

  16. Transition state theory thermal rate constants and RRKM-based branching ratios for the N((2)D) + CH(4) reaction based on multi-state and multi-reference ab initio calculations of interest for the Titan's chemistry.

    PubMed

    Ouk, Chanda-Malis; Zvereva-Loëte, Natalia; Scribano, Yohann; Bussery-Honvault, Béatrice

    2012-10-30

    Multireference single and double configuration interaction (MRCI) calculations including Davidson (+Q) or Pople (+P) corrections have been conducted in this work for the reactants, products, and extrema of the doublet ground state potential energy surface involved in the N((2)D) + CH(4) reaction. Such highly correlated ab initio calculations are then compared with previous PMP4, CCSD(T), W1, and DFT/B3LYP studies. Large relative differences are observed in particular for the transition state in the entrance channel resolving the disagreement between previous ab initio calculations. We confirm the existence of a small but positive potential barrier (3.86 ± 0.84 kJ mol(-1) (MR-AQCC) and 3.89 kJ mol(-1) (MRCI+P)) in the entrance channel of the title reaction. The correlation is seen to change significantly the energetic position of the two minima and five saddle points of this system together with the dissociation channels but not their relative order. The influence of the electronic correlation into the energetic of the system is clearly demonstrated by the thermal rate constant evaluation and it temperature dependance by means of the transition state theory. Indeed, only MRCI values are able to reproduce the experimental rate constant of the title reaction and its behavior with temperature. Similarly, product branching ratios, evaluated by means of unimolecular RRKM theory, confirm the NH production of Umemoto et al., whereas previous works based on less accurate ab initio calculations failed. We confirm the previous findings that the N((2)D) + CH(4) reaction proceeds via an insertion-dissociation mechanism and that the dominant product channels are CH(2)NH + H and CH(3) + NH.

  17. Vertical 2D Heterostructures

    NASA Astrophysics Data System (ADS)

    Lotsch, Bettina V.

    2015-07-01

    Graphene's legacy has become an integral part of today's condensed matter science and has equipped a whole generation of scientists with an armory of concepts and techniques that open up new perspectives for the postgraphene area. In particular, the judicious combination of 2D building blocks into vertical heterostructures has recently been identified as a promising route to rationally engineer complex multilayer systems and artificial solids with intriguing properties. The present review highlights recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties. This overview is intended to bridge the gap between two major—yet largely disjunct—developments in 2D heterostructures, which are firmly rooted in solid-state chemistry or physics. Although the underlying types of heterostructures differ with respect to their dimensions, layer alignment, and interfacial quality, there is common ground, and future synergies between the various assembly strategies are to be expected.

  18. Real-space observation of metal-insulator transition at complex oxide heterointerface with cross-sectional STM

    NASA Astrophysics Data System (ADS)

    Chiu, Ya-Ping; Lin, Jheng-Cyuan; Thanh, Tra-Vu; Lin, Tai-Te; Huang, Po-Cheng; Huang, Bo-Chao; Lin, Jiunn-Yuan; Chu, Ying-Hao

    We report the direct observation of tunable electronic property through visible light at LaAlO3 / SrTiO3 (LAO/STO) complex oxide heterointerface using cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S). Many researches have shown that for the interface to be conducting, the thickness of LAO should be equal to or greater than the critical value 4 unit cells (u.c.). With LAO surface modification by Au clusters, interfacial two-dimensional electron gas presents a giant optical switching effect under visible light illuminated. In this study, through the interaction between photons and electrons system, a direct observation of the evolution of electronic structures from insulating to conducting has been revealed in the LAO (3u.c.)/STO model using the technique of cross-sectional scanning tunneling microscopy and spectroscopy. Results clearly reveal the changes in the built-in electric field in LAO and the band bending in the STO adjacent to the interface after light illumination. National Sun Yat-sen University, Taiwan; Academia Sinica, Taiwan.

  19. Characterization of Metal-Insulator-Transition (MIT) Phase Change Materials (PCM) for Reconfigurable Components, Circuits, and Systems

    DTIC Science & Technology

    2013-03-01

    50nm TiW adhesion layer. Then, the 100nm GeTe pillar was then deposited between two silicon dioxide (SiO2) pillars. Figure 7: Structure of GeTe... Silicon with the application of an electric field...GeTe film and (b) silicon substrate of GeTe film. ..................................................... 79  Figure 51: Crack in crystalline GeTe wire

  20. Metal-insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

    NASA Astrophysics Data System (ADS)

    Silwal, Punam; Miao, Ludi; Stern, Ilan; Zhou, Xiaolan; Hu, Jin; Spinu, Leonard; Kim, Dae Ho; Talbayev, Diyar

    2014-03-01

    Spinel NiCo2O4 is attractive for various technological applications but is less studied partly because of the unavailability of NiCo2O4 single crystal or epitaxial thin film. We have grown high-quality crystalline epitaxial NiCo2O4 thin films on MgAl2O4 (001) substrates. The systematic investigation of the films grown at various temperatures reveals a strong correlation between the structural, magnetic, and electrical transport properties. The low-temperature grown films show metallic behavior with strong ferrimagnetic ordering while the high temperature grown films are insulating with suppressed magnetic order. In addition, these films show excellent transport and magnetic properties down to 2 unit-cell thickness. Our study of temperature- and growth-condition dependent optical conductivity provides further insight in the carrier transport of these films. We observed coherent band-like transport in both low- and high temperature grown films, whereas only thermally activated hopping conductivity was reported in previous studies. The confirmation of coherent band like transport provides a basis for further improving NiCo2O4 for the application as transparent conducting oxide.

  1. Charge and spin diffusion on the metallic side of the metal-insulator transition: A self-consistent approach

    NASA Astrophysics Data System (ADS)

    Wellens, Thomas; Jalabert, Rodolfo A.

    2016-10-01

    We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and diffusion coefficient are calculated within different schemes of the self-consistent framework. The simplest of these schemes qualitatively reproduces previous phenomenological developments, while more elaborate calculations provide corrections that approach the values obtained in numerical simulations. The results are universal for zinc-blende semiconductors with electron conductance in the impurity band, and thus they are able to account for the measured spin-relaxation times of materials with very different physical parameters. From a general point of view, our theory opens a new perspective for describing the hopping dynamics in random quantum networks.

  2. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    SciTech Connect

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.

  3. Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

    NASA Astrophysics Data System (ADS)

    Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

    2016-03-01

    A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

  4. 2D semiconductor optoelectronics

    NASA Astrophysics Data System (ADS)

    Novoselov, Kostya

    The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices, etc. By taking the complexity and functionality of such van der Waals heterostructures to the next level we introduce quantum wells engineered with one atomic plane precision. Light emission from such quantum wells, quantum dots and polaritonic effects will be discussed.

  5. Mott transitions in a three-component Falicov-Kimball model: A slave boson mean-field study

    NASA Astrophysics Data System (ADS)

    Le, Duc-Anh; Tran, Minh-Tien

    2015-05-01

    Metal-insulator transitions in a three-component Falicov-Kimball model are investigated within the Kotliar-Ruckenstein slave boson mean-field approach. The model describes a mixture of two interacting fermion atom species loaded into an optical lattice at ultralow temperature. One species is two-component atoms, which can hop in the optical lattice, and the other is single-component atoms, which are localized. Different correlation-driven metal-insulator transitions are observed depending on the atom filling conditions and local interactions. These metal-insulator transitions are classified by the band renormalization factors and the double occupancies of the atom species. The filling conditions and the critical value of the local interactions for these metal-insulator transitions are also analytically established. The obtained results not only are in good agreement with the dynamical mean-field theory for the three-component Falicov-Kimball model but also clarify the nature and properties of the metal-insulator transitions in a simple physics picture.

  6. Valleytronics in 2D materials

    NASA Astrophysics Data System (ADS)

    Schaibley, John R.; Yu, Hongyi; Clark, Genevieve; Rivera, Pasqual; Ross, Jason S.; Seyler, Kyle L.; Yao, Wang; Xu, Xiaodong

    2016-11-01

    Semiconductor technology is currently based on the manipulation of electronic charge; however, electrons have additional degrees of freedom, such as spin and valley, that can be used to encode and process information. Over the past several decades, there has been significant progress in manipulating electron spin for semiconductor spintronic devices, motivated by potential spin-based information processing and storage applications. However, experimental progress towards manipulating the valley degree of freedom for potential valleytronic devices has been limited until very recently. We review the latest advances in valleytronics, which have largely been enabled by the isolation of 2D materials (such as graphene and semiconducting transition metal dichalcogenides) that host an easily accessible electronic valley degree of freedom, allowing for dynamic control.

  7. Unparticle example in 2D.

    PubMed

    Georgi, Howard; Kats, Yevgeny

    2008-09-26

    We discuss what can be learned about unparticle physics by studying simple quantum field theories in one space and one time dimension. We argue that the exactly soluble 2D theory of a massless fermion coupled to a massive vector boson, the Sommerfield model, is an interesting analog of a Banks-Zaks model, approaching a free theory at high energies and a scale-invariant theory with nontrivial anomalous dimensions at low energies. We construct a toy standard model coupling to the fermions in the Sommerfield model and study how the transition from unparticle behavior at low energies to free particle behavior at high energies manifests itself in interactions with the toy standard model particles.

  8. Non-ohmic behavior of metal-insulator granular thin films in low-field regime (eΔV ≪ kBT)

    NASA Astrophysics Data System (ADS)

    Boff, M. A. S.; Canto, B.; Mesquita, F.; Hinrichs, R.; Fraga, G. L. F.; Pereira, L. G.

    2016-10-01

    Non-ohmic behavior is not expected in metal-insulator granular systems in a low-field regime. There is no model to explain this behavior, even though it has been reported in several metal-insulator granular thin films (Fe-Al2O3, Co-Al2O3, and Ti-SiO2). In this paper, we show additional experimental results of Fe-SiO2 granular films and propose an explanation for the electrical properties of all above mentioned systems, based on Mott variable range hopping. The experimental results show that the localization length increases and the electrical resistance decreases with the increase of electrical potential or current. The non-ohmic behavior of the resistance and the increase of the localization length with increasing current are explained by the activation of new pathways for electrons in granular thin films that contain variable grain sizes and/or have different distances between grains.

  9. Fano response induced by the interference between localized plasmons and interface reflections in metal-insulator-metal waveguide structure

    NASA Astrophysics Data System (ADS)

    Li, Hong-Ju; Wang, Ling-Ling; Zhai, Xiang

    2016-06-01

    The original Fano response induced by the interference between the localized plasmons and interface-reflected surface plasmon polaritons in a single metal-insulator-metal waveguide with two parallel separated metal strips is predicted theoretically through the coupled mode theory combined with the Fano function. The prominent asymmetric line shape resulting from the coupling between the discrete dipole resonance formed between metal strips and an interface-reflected-induced continuum is confirmed by the performed numerical simulations. The novel Fano spectrum is tuned easily by varying the length and coupling distance of metal strips. By introducing another separated metal strip, the outstanding double Fano behavior is obtained, and the corresponding underlying physics is illustrated. In particular, based on the performed refractive index sensing spectra, the high sensitivity of 855 nm/RIU and figure of merit up to 30 are achieved via the double Fano resonance. Undoubtedly, such ingenious structure may benefit the fabrications of nano-integrated plasmonic devices for optical switching and sensing.

  10. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  11. Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

    PubMed

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2011-08-15

    An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used.

  12. Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

    SciTech Connect

    Kamerbeek, A. M. Banerjee, T.; Hueting, R. J. E.

    2015-12-14

    Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO{sub x} in between the metal and n-SrTiO{sub 3} interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO{sub 3}) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO{sub 3}. The non-linear permittivity of n-SrTiO{sub 3} leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  13. Auger electron spectroscopy investigation of degradation effect in GaAs metal-insulator-semiconductor solar cells

    SciTech Connect

    Pandelisev, K.A.; Wang, E.Y.

    1982-01-01

    Au-interfacial oxide layer (GeO/sub 2/, Sb/sub 2/O/sub 3/, Bi/sub 2/O/sub 3/, SnO/sub 2/ and native oxide mixture of AS/sub 2/O/sub 3/ and Ga/sub 2/O/sub 3/)-semiconductor (GaAs) structures were investigated by the Auger Electron Spectroscopy Method. The results of depth profiling with Ar/sup +/-ion sputtering are presented for all metal-insulator-semiconductor (MIS) structures. ''Metal'' atoms from deposited interfacial oxide layers (Ge from Ge/sub 2/O/sub 3/, Sb from Sb/sub 2/O/sub 3/, Bi from Bi/sub 2/O/sub 3/, and Sn from SnO/sub 2/) were observed on the surface. Only As atoms were observed for the native oxide mixture of As/sub 2/O/sub 3/ and Ga/sub 2/O/sub 3/ interfacial layer. These findings suggest that As/sub 2/O/sub 3/ is the dominating oxide at the metal-oxide interface for native oxide GaAs MIS solar cells. The interfacial reaction takes place between Au and the interfacial layer at room temperature. The ''diffusion'' of metal atoms from the interfacial layer towards the surface is suspected to play a role in degradation effect in GaAs MIS solar cells.

  14. A metal-insulator-metal electron emitter based on a porous Al{sub 2}O{sub 3} film

    SciTech Connect

    Xue, Tao; Liang, Zhi-Hu Zhang, Xiao-Ning; Liu, Chun-Liang

    2015-04-20

    A metal-insulator-metal electron emitter containing a sandwiched insulator layer composed of porous aluminum oxide Al{sub 2}O{sub 3} was fabricated. The electron emission characteristics of the electron emitter were investigated under vacuum and xenon. Treatment with H{sub 3}PO{sub 4} and rapid thermal oxidation increased the electric field inside the insulator and improved the quality of porous Al{sub 2}O{sub 3}, resulting in higher efficiency and less fluctuation of electron emission. The maximum current and efficiency of electron emission reached 1.05 mA/cm{sup 2} and 51.2%, respectively, under a pressure of 1.0×10{sup −4} Pa. In addition, electrons were injected into xenon and 147 nm vacuum ultraviolet emission was detected in xenon at a pressure of 5.0 × 10{sup 2 }Pa. This electron emitter has a great potential for use as an ultraviolet radiation source.

  15. Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

    NASA Astrophysics Data System (ADS)

    Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

    2016-12-01

    We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

  16. Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1996-01-01

    Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

  17. Schottky barrier height of Ni/TiO2/4H-SiC metal-insulator-semiconductor diodes

    NASA Astrophysics Data System (ADS)

    Kaufmann, Ivan R.; Pereira, Marcelo B.; Boudinov, Henri I.

    2015-12-01

    Ni/TiO2/4H-SiC diodes were analysed through measurements of current-voltage curves varying the temperature. The Schottky Barrier Height (SBH) which increased with temperature was studied by simulation of the Thermionic Emission Model, considering Ni/SiC Schottky structures with an insulator layer between the metal and semiconductor. This model shows that a new method of calculation should be applied to diodes that have a metal-insulator-semiconductor structure. Misleading results for SBH are obtained if the thin insulator layer is not considered. When applying the suggested method to the Ni/TiO2/4H-SiC diodes it was necessary to consider not only the deposited TiO2 layer, but also a second dielectric layer of native SiCxOy at the surface of SiC. By measuring I-V-T curves for two samples with different thicknesses of TiO2, the suggested method allows one to estimate the thicknesses of both dielectric layers: TiO2 and SiOxCy.

  18. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    SciTech Connect

    Pandey, Sumeet C. Meade, Roy; Sandhu, Gurtej S.

    2015-02-07

    We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  19. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    NASA Astrophysics Data System (ADS)

    Pandey, Sumeet C.; Meade, Roy; Sandhu, Gurtej S.

    2015-02-01

    We present numerical results from atomistic simulations of Cu in SiO2 and Al2O3, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 1020 cm-3 and 3.41 × 1022 cm-3) in bulk oxides are presented. The metal-insulator interfaces result in up to a ˜4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  20. Mass-productive fabrication of a metal-insulator-metal plasmon waveguide with a linear taper for nanofocusing

    NASA Astrophysics Data System (ADS)

    Wongpanya, Kruawan; Kasaya, Takeshi; Miyazaki, Hideki T.; Oosato, Hirotaka; Sugimoto, Yoshimasa; Pijitrojana, Wanchai

    2016-09-01

    The fabrication of a metal-insulator-metal plasmon waveguide with a linear taper is reported. Highly efficient nanofocusing of light with a Au-SiO2-Au waveguide with a three-dimensional taper had been demonstrated. However, conventional vertical taper structures were fabricated with a low-throughput process based on electron beam scanning. We propose an efficient, mass-productive fabrication process using a standard dry etching technique. A key improvement is the employment of a mixed gas of CHF3 and O2. By optimizing the gas composition and the cooling process of the substrate, a SiO2 vertical taper with an angle of 19°, which is very close to the optimum 20°, was successfully produced. At the tip section, an ultra-thin waveguide as thin as 5.6 nm, only one-third of the conventional demonstration, is reproducibly realized by the employment of an atomic layer deposition of Al2O3. Coupling efficiency as high as 72 % numerically demonstrated.

  1. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  2. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    PubMed

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

  3. General observation of the memory effect in metal-insulator-ITO structures due to indium diffusion

    NASA Astrophysics Data System (ADS)

    Wu, Xiaojing; Xu, Huihua; Wang, Yu; Rogach, Andrey L.; Shen, Yingzhong; Zhao, Ni

    2015-07-01

    Resistive random access memory (RRAM) devices based on metal oxides, organic molecules and inorganic nanocrystals (NCs) have been studied extensively in recent years. Different memory switching mechanisms have been proposed and shown to be closely related to the device architectures. In this work, we demonstrate that the use of an ITO/active layer/InGa structure can yield nonvolatile resistive memory behavior in a variety of active materials, including polymers, organic small molecules, and colloidal NCs. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40-50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime is observed during transition from the ON to OFF state, and is explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface. Our study reveals the impact of indium diffusion at the ITO/active layer interface, an important factor that should be taken into consideration when designing thin printed RRAM devices.

  4. Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

    PubMed Central

    Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

    2014-01-01

    Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

  5. Quantum coherence selective 2D Raman–2D electronic spectroscopy

    PubMed Central

    Spencer, Austin P.; Hutson, William O.; Harel, Elad

    2017-01-01

    Electronic and vibrational correlations report on the dynamics and structure of molecular species, yet revealing these correlations experimentally has proved extremely challenging. Here, we demonstrate a method that probes correlations between states within the vibrational and electronic manifold with quantum coherence selectivity. Specifically, we measure a fully coherent four-dimensional spectrum which simultaneously encodes vibrational–vibrational, electronic–vibrational and electronic–electronic interactions. By combining near-impulsive resonant and non-resonant excitation, the desired fifth-order signal of a complex organic molecule in solution is measured free of unwanted lower-order contamination. A critical feature of this method is electronic and vibrational frequency resolution, enabling isolation and assignment of individual quantum coherence pathways. The vibronic structure of the system is then revealed within an otherwise broad and featureless 2D electronic spectrum. This method is suited for studying elusive quantum effects in which electronic transitions strongly couple to phonons and vibrations, such as energy transfer in photosynthetic pigment–protein complexes. PMID:28281541

  6. Quantum coherence selective 2D Raman-2D electronic spectroscopy

    NASA Astrophysics Data System (ADS)

    Spencer, Austin P.; Hutson, William O.; Harel, Elad

    2017-03-01

    Electronic and vibrational correlations report on the dynamics and structure of molecular species, yet revealing these correlations experimentally has proved extremely challenging. Here, we demonstrate a method that probes correlations between states within the vibrational and electronic manifold with quantum coherence selectivity. Specifically, we measure a fully coherent four-dimensional spectrum which simultaneously encodes vibrational-vibrational, electronic-vibrational and electronic-electronic interactions. By combining near-impulsive resonant and non-resonant excitation, the desired fifth-order signal of a complex organic molecule in solution is measured free of unwanted lower-order contamination. A critical feature of this method is electronic and vibrational frequency resolution, enabling isolation and assignment of individual quantum coherence pathways. The vibronic structure of the system is then revealed within an otherwise broad and featureless 2D electronic spectrum. This method is suited for studying elusive quantum effects in which electronic transitions strongly couple to phonons and vibrations, such as energy transfer in photosynthetic pigment-protein complexes.

  7. Quantum coherence selective 2D Raman-2D electronic spectroscopy.

    PubMed

    Spencer, Austin P; Hutson, William O; Harel, Elad

    2017-03-10

    Electronic and vibrational correlations report on the dynamics and structure of molecular species, yet revealing these correlations experimentally has proved extremely challenging. Here, we demonstrate a method that probes correlations between states within the vibrational and electronic manifold with quantum coherence selectivity. Specifically, we measure a fully coherent four-dimensional spectrum which simultaneously encodes vibrational-vibrational, electronic-vibrational and electronic-electronic interactions. By combining near-impulsive resonant and non-resonant excitation, the desired fifth-order signal of a complex organic molecule in solution is measured free of unwanted lower-order contamination. A critical feature of this method is electronic and vibrational frequency resolution, enabling isolation and assignment of individual quantum coherence pathways. The vibronic structure of the system is then revealed within an otherwise broad and featureless 2D electronic spectrum. This method is suited for studying elusive quantum effects in which electronic transitions strongly couple to phonons and vibrations, such as energy transfer in photosynthetic pigment-protein complexes.

  8. Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal-insulator-semiconductor (MIS) diode at high temperature range

    NASA Astrophysics Data System (ADS)

    Rajagopal Reddy, V.

    2016-05-01

    The electrical and transport mechanisms of a fabricated Au/Ba0.6Sr0.4TiO3 (BST)/GaN metal-insulator-semiconductor (MIS) diode have been studied in the temperature range of 280-430 K by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The barrier heights (BHs) of the Au/BST/GaN MIS diode are found to be 0.85 eV ( I- V)/1.35 ( C- V) at 280 K and 1.14 eV ( I- V)/1.17 ( C- V) at 430 K. The series resistance ( R S) values determined by Cheung's functions are in good agreement with each other. The difference between BHs estimated by I- V and C- V methods are also discussed. Results show that the estimated interface state density ( N SS) of MIS diode decreases with an increase in temperature. Observations have indicated that the BH increases whereas ideality factor R S and N SS decreases with increasing temperature. Results have demonstrated that the reverse leakage current is dominated by Poole-Frenkel emission at temperatures of 280-340 K and by Schottky emission at temperatures of 370-430 K. It is also noted that there is a transition of the conduction mechanism in Au/BST/GaN MIS diode from Poole-Frenkel to Schottky emission at temperatures of 340-370 K.

  9. Large Area Synthesis of 2D Materials

    NASA Astrophysics Data System (ADS)

    Vogel, Eric

    Transition metal dichalcogenides (TMDs) have generated significant interest for numerous applications including sensors, flexible electronics, heterostructures and optoelectronics due to their interesting, thickness-dependent properties. Despite recent progress, the synthesis of high-quality and highly uniform TMDs on a large scale is still a challenge. In this talk, synthesis routes for WSe2 and MoS2 that achieve monolayer thickness uniformity across large area substrates with electrical properties equivalent to geological crystals will be described. Controlled doping of 2D semiconductors is also critically required. However, methods established for conventional semiconductors, such as ion implantation, are not easily applicable to 2D materials because of their atomically thin structure. Redox-active molecular dopants will be demonstrated which provide large changes in carrier density and workfunction through the choice of dopant, treatment time, and the solution concentration. Finally, several applications of these large-area, uniform 2D materials will be described including heterostructures, biosensors and strain sensors.

  10. Metal-to-insulator transition in Y1-xPrxBa2Cu3O7-δ single crystals with various praseodymium contents

    NASA Astrophysics Data System (ADS)

    Vovk, R. V.; Nazyrov, Z. F.; Goulatis, I. L.; Chroneos, A.

    2013-02-01

    We investigate the influence of praseodymium content on the basis plane conductivity of Y1-хPrхBa2Cu3O7-δ single crystals. An increase of the praseodymium concentration leads to the enhancement of the localization effects and the appearance of a metal-insulator transition in the system, which always precedes the superconducting transition. The increase of the concentration of praseodymium, leads to a significant displacement of the point of the metal-insulator transition in the low temperature region.

  11. Tiny surface plasmon resonance sensor integrated on silicon waveguide based on vertical coupling into finite metal-insulator-metal plasmonic waveguide.

    PubMed

    Lee, Dong-Jin; Yim, Hae-Dong; Lee, Seung-Gol; O, Beom-Hoan

    2011-10-10

    We propose a tiny surface plasmon resonance (SPR) sensor integrated on a silicon waveguide based on vertical coupling into a finite thickness metal-insulator-metal (f-MIM) plasmonic waveguide structure acting as a Fabry-Perot resonator. The resonant characteristics of vertically coupled f-MIM plasmonic waveguides are theoretically investigated and optimized. Numerical results show that the SPR sensor with a footprint of ~0.0375 μm2 and a sensitivity of ~635 nm/RIU can be designed at a 1.55 μm transmission wavelength.

  12. Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer

    NASA Astrophysics Data System (ADS)

    Illarionov, Yu. Yu.; Vexler, M. I.; Isakov, D.; Fedorov, V. V.; Sing, Yew Kwang

    2013-10-01

    A technique for diagnostics of the injection properties of thin dielectric layers based on analysis of the data on silicon electroluminescence in a metal-insulator-semiconductor structure is proposed. The possibility of applying this technique to control the electron injection energy (in particular, when the barrier parameters are poorly known) is demonstrated by the example of samples with CaF2 and HfO2/SiO2. The results obtained are important for application of the insulators under study in microelectronic devices.

  13. E-2D Advanced Hawkeye Aircraft (E-2D AHE)

    DTIC Science & Technology

    2015-12-01

    Selected Acquisition Report (SAR) RCS: DD-A&T(Q&A)823-364 E-2D Advanced Hawkeye Aircraft (E-2D AHE) As of FY 2017 President’s Budget Defense...Office Estimate RDT&E - Research, Development, Test, and Evaluation SAR - Selected Acquisition Report SCP - Service Cost Position TBD - To Be Determined

  14. Near-Field Nanoscopy of Metal-Insulator Phase Transitions Towards Synthesis of Novel Correlated Transition Metal Oxides and Their Interaction with Plasmon Resonances

    DTIC Science & Technology

    2016-01-05

    most exciting discoveries in the past few years in condensed matter research is the theoretical foundations of topological insulating electronic...Figure 1b–d) show bright and dark optical contrast due to the coexisting insulating ( dark ) and metallic (bright) phases affecting the nanoscale...separated by a dark contrast from the inner bright surface of the structure. Such an edge fringe is missing in the near-field amplitude image taken

  15. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    NASA Astrophysics Data System (ADS)

    Chen, Yiren; Song, Hang; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing; Miao, Guoqing

    2014-11-01

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  16. High Electron Mobility Ge n-Channel Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

    NASA Astrophysics Data System (ADS)

    Maeda, Tatsuro; Morita, Yukinori; Takagi, Shinichi

    2010-06-01

    We fabricate high-k/Ge n-channel metal-insulator-semiconductor field-effect transistors (MISFETs) by the gate-last process with the thermal solid source diffusion to achieve both of high quality source/drain (S/D) and gate stack. The n+/p junction formed by solid source diffusion technique of Sb dopant shows the excellent diode characteristics of ˜1.5×105 on/off ratio between +1 and -1 V and the quite low reverse current density of ˜4.1×10-4 A/cm2 at +1 V after the fabrication of high-k/Ge n-channel MISFETs that enable us to observe well-behaved transistor performances. The extracted electron mobility with the peak of 891 cm2/(V.s) is high enough to be superior to the Si universal electron mobility especially in low Eeff.

  17. Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

    NASA Astrophysics Data System (ADS)

    Julin, J. K.; Chaudhuri, S.; Laitinen, M.; Sajavaara, T.; Maasilta, I. J.

    2016-12-01

    In this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1/f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated.

  18. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    SciTech Connect

    Chen, Yiren; Song, Hang E-mail: lidb@ciomp.ac.cn; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing E-mail: lidb@ciomp.ac.cn; Miao, Guoqing

    2014-11-10

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  19. Characterization and modeling of screen-printed metal insulator semiconductor tunnel junctions for integrated bypass functionality in crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Thaidigsmann, Benjamin; Lohmüller, Elmar; Fertig, Fabian; Clement, Florian; Wolf, Andreas

    2013-06-01

    This work investigates sintered, screen-printed silver contacts on lowly doped p-type silicon with different intermediate dielectric layer systems using scanning electron microscopy and dark current-voltage measurements. The data reveal electron tunneling through a thin insulating layer as the most probable transport mechanism. A model based on Fowler-Nordheim and direct tunneling is presented that allows for the description of reverse current-voltage characteristics and the extraction of effective contact properties. The investigated screen-printed metal insulator semiconductor structures are proposed as solar cell integrated bypass that reduces the risk of hot spot generation and power loss during partial shading of a module. Furthermore, the integrated bypass approach enables the fabrication of solar cells from silicon material that tends to show early breakdown of the p-n-junction.

  20. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    SciTech Connect

    Popovici, M. Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M.

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.