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Sample records for 2d metal-insulator transition

  1. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

    SciTech Connect

    SARACHIK, MYRIAM P

    2015-02-20

    STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectric power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.

  2. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  3. The Two-Commponent Model and 2d Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Castner, Theodore G.

    2004-03-01

    Fermi liquid theory for the 2d MIT is extended to include the soft correlation gap (CG) in the density-of-states N(E) from carrier interactions [N(E)α(E-E_F)^t] producing a minimum in N(E) at E_F. The results are consistent with the scaling form g=g_cexp(xT_o/T) in a limited T-regime, but not as Tarrow0 ruling out the perfect conductor scenario. The two-component model of itinerant plus localized electrons n_i+n_loc=n=n_c(1+x) for n>nc is an essential feature and allows a full explanation of the T-dependence of the metallic resistivity ratio ρ_i(T)/ρ_i(0) [ρ_i= 1/(σ-σ_c)] including the maximum at T_max. The results explain the Hanein et al. data^1 for p-type GaAs and show p_i(T)/p_i(0)=1+T/T_phi in a restricted T-range where T_phi=xTc [T_c=E_c/k, E_c=mobility edge] as x=p/p_c-1 goes to 0. The correction to EF from the soft CG [of width |Delta_c] yields a constant ratio E_F/Δc as x goes to 0. The origin of the nonuniversal gc [ρc at x=0] and implications for the beta function β(g)=ln(g/g_c) and single particle scaling will be discussed. 1. Y. Hanein et al., PRL80, 1288 (1998);Phys.Rev.B58, R13338 (1998).

  4. Hopping energy and percolation-type transport in p-GaAs low densities near the 2D metal-insulator transition at zero magnetic field

    NASA Astrophysics Data System (ADS)

    Dlimi, S.; El kaaouachi, A.; Narjis, A.; Limouny, L.; Sybous, A.; Errai, M.

    2013-10-01

    We investigated the temperature dependence of resistivity of a high mobility two-dimensional holes system grown on the (311) GaAs surface in the absence of the magnetic field near the metal-insulator transition. The Coulomb hopping was found in a wide range of temperature and carrier density. Quantitative analysis of our results suggests that a crossover from Efros-Shklovskii to Mott variable range hopping due to screening phenomenon when the hopping distance increases. We found that using the 2D single particle hopping amplitude CES gives unreasonably high localization lengths. Therefore, we believe that electrical transport is dominated by correlated hopping and the hopping amplitude must be renormalized by a reduction factor A≈1.6. The localization length appears to diverge in a power-law fashion near the transition point. The analysis of the hopping gives results consistent with the prediction of the critical point from a recent study of percolation and other experiences.

  5. Approximating metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Danieli, Carlo; Rayanov, Kristian; Pavlov, Boris; Martin, Gaven; Flach, Sergej

    2015-12-01

    We consider quantum wave propagation in one-dimensional quasiperiodic lattices. We propose an iterative construction of quasiperiodic potentials from sequences of potentials with increasing spatial period. At each finite iteration step, the eigenstates reflect the properties of the limiting quasiperiodic potential properties up to a controlled maximum system size. We then observe approximate Metal-Insulator Transitions (MIT) at the finite iteration steps. We also report evidence on mobility edges, which are at variance to the celebrated Aubry-André model. The dynamics near the MIT shows a critical slowing down of the ballistic group velocity in the metallic phase, similar to the divergence of the localization length in the insulating phase.

  6. Thermodynamic behavior near a metal-insulator transition

    NASA Technical Reports Server (NTRS)

    Paalanen, M. A.; Graebner, J. E.; Bhatt, R. N.; Sachdev, S.

    1988-01-01

    Measurements of the low-temperature specific heat of phosphorus-doped silicon for densities near the metal-insulator transition show an enhancement over the conduction-band itinerant-electron value. The enhancement increases toward lower temperatures but is less than that found for the spin susceptibility. The data are compared with various theoretical models; the large ratio of the spin susceptibility to specific heat indicates the presence of localized spin excitations in the metallic phase as the metal-insulator transition is approached.

  7. Metal-insulator transitions in IZO, IGZO, and ITZO films

    NASA Astrophysics Data System (ADS)

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-01

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe-Regel criterion. We found that the MIT occurs in a narrow range between k F ℓ = 0.13 and k F ℓ = 0.25, where k F and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ ( T ) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros-Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(TMott/T)1/4 or exp(TMott/T)1/3 for Mott hopping conduction to exp(TES/T)1/2 for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between TMott and TES satisfies TES ∝ TMott2/3.

  8. Metal-insulator transitions in IZO, IGZO, and ITZO films

    SciTech Connect

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  9. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  10. Quasiparticle transformation during a metal-insulator transition in graphene.

    PubMed

    Bostwick, Aaron; McChesney, Jessica L; Emtsev, Konstantin V; Seyller, Thomas; Horn, Karsten; Kevan, Stephen D; Rotenberg, Eli

    2009-07-31

    Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state. PMID:19792520

  11. Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.

    PubMed

    Shekhawat, Ashivni; Papanikolaou, Stefanos; Zapperi, Stefano; Sethna, James P

    2011-12-30

    Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.

  12. Metal-Insulator Transition of Dirac Fermions: Variational Cluster Study

    NASA Astrophysics Data System (ADS)

    Ebato, Masaki; Kaneko, Tatsuya; Ohta, Yukinori

    2015-04-01

    A comparative study is made on the metal-insulator transition of Dirac fermions in the honeycomb and π-flux Hubbard models at half filling by means of the variational cluster approximation and cluster dynamical impurity approximation. Paying particular attention to the choice of the geometry of solver clusters and the inclusion of particle-bath sites, we show that the direct transition from the Dirac semimetallic state to the antiferromagnetic Mott insulator state occurs in these models, and therefore, the spin liquid phase is absent in the intermediate region, in agreement with recent quantum-Monte-Carlo-based calculations.

  13. On metal-insulator transition in cubic fullerides

    NASA Astrophysics Data System (ADS)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  14. Quantum critical transport at a continuous metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Haldar, P.; Laad, M. S.; Hassan, S. R.

    2016-08-01

    In contrast to the first-order correlation-driven Mott metal-insulator transition, continuous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball model, a representative of the latter class in the strong disorder category. Employing cluster-dynamical mean-field theory, we find clear and anomalous quantum critical scaling behavior manifesting as perfect mirror symmetry of scaling curves on both sides of the MIT. Surprisingly, we find that the beta function β (g ) scales as log(g ) deep into the bad-metallic phase as well, providing a sound unified basis for these findings. We argue that such strong localization quantum criticality may manifest in real three-dimensional systems where disorder effects are more important than electron-electron interactions.

  15. Chiral phase transition in lattice QCD as a metal-insulator transition

    SciTech Connect

    Garcia-Garcia, Antonio M.; Osborn, James C.

    2007-02-01

    We investigate the lattice QCD Dirac operator with staggered fermions at temperatures around the chiral phase transition. We present evidence of a metal-insulator transition in the low lying modes of the Dirac operator around the same temperature as the chiral phase transition. This strongly suggests the phenomenon of Anderson localization drives the QCD vacuum to the chirally symmetric phase in a way similar to a metal-insulator transition in a disordered conductor. We also discuss how Anderson localization affects the usual phenomenological treatment of phase transitions a la Ginzburg-Landau.

  16. Metal-insulator transitions due to self-doping

    SciTech Connect

    Blawid, S.; Tuan, H.A.; Yanagisawa, T.; Fulde, P.

    1996-09-01

    We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per site. Depending on the position of the additional band, both a metal-to-insulator and an insulator-to-metal transition occur with increasing hybridization. The latter transition from a Mott insulator into a metal via {open_quote}{open_quote}self-doping{close_quote}{close_quote} was recently proposed to explain the low carrier concentration in Yb{sub 4}As{sub 3}. We suggest a restrictive parameter regime for this transition, making use of exact results in various limits. The predicted absence of the self-doping transition for nested Fermi surfaces is confirmed by means of an unrestricted Hartree-Fock approximation and an exact diagonalization study in one dimension. In the general case metal-insulator phase diagrams are obtained within the slave-boson mean-field and the alloy-analog approximations. {copyright} {ital 1996 The American Physical Society.}

  17. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-02-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.

  18. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    PubMed Central

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-01-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system. PMID:26860789

  19. Exponential Orthogonality Catastrophe at the Anderson Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kettemann, S.

    2016-09-01

    We consider the orthogonality catastrophe at the Anderson metal-insulator transition (AMIT). The typical overlap F between the ground state of a Fermi liquid and the one of the same system with an added potential impurity is found to decay at the AMIT exponentially with system size L as F ˜exp (-c Lη) , where η is the power of multifractal intensity correlations. Thus, strong disorder typically increases the sensitivity of a system to an added impurity exponentially. We recover, on the metallic side of the transition, Anderson's result that the fidelity F decays with a power law F ˜L-q (EF) with system size L . Its power increases as the Fermi energy EF approaches the mobility edge EM as q (EF)˜[(EF-EM )/EM]-ν η , where ν is the critical exponent of the correlation length ξc. On the insulating side of the transition, F is constant for system sizes exceeding the localization length ξ . While these results are obtained for the typical fidelity F , we find that log F is widely, log normally, distributed with a width diverging at the AMIT. As a consequence, the mean value of the fidelity F converges to one at the AMIT, in strong contrast to its typical value which converges to zero exponentially fast with system size L . This counterintuitive behavior is explained as a manifestation of multifractality at the AMIT.

  20. Quantum capacitance in thin film vanadium dioxide metal insulator transition

    NASA Astrophysics Data System (ADS)

    Wu, Zhe; Knighton, Talbot; Tarquini, Vinicio; Torres, David; Wang, Tongyu; Sepulveda, Nelson; Huang, Jian

    We present capacitance measurements of the electronic density of states performed in high quality vanadium dioxide (VO2) thin films on sapphire (Al2O3) substrate. These films show the expected metal insulator transition near 60 °C with resistivity changing by 3 orders of magnitude with a hysteresis of 10 °C. To make a capacitive probe, a gate is suspended above the film surface using a flip-chip method with microfabricated supports. The geometric capacitance per-area reached is 40 pF/mm2. Such a large capacitance can be significantly modified by electron interaction and band charging/discharging which appear as an extra term known as the quantum capacitance (Cq). An AC signal applied to the gate allows measurement of the changing density of states (DOS) across the MIT. The DOS abruptly increases as the sample is heated through the transition point. Conversely the low temperature drop of d μ / d n is consistent with an energy gap opening in the insulating phase. These parameters shed light on the transition mechanism. NSF DMR-1105183, NSF ECCS 1306311.

  1. Anderson metal-insulator transitions with classical magnetic impurities

    SciTech Connect

    Jung, Daniel; Kettemann, Stefan

    2014-08-20

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude W{sub c}, in the presence of Heisenberg impurities, W{sub c} is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  2. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.

    PubMed

    Chen, Xiaolong; Wu, Zefei; Xu, Shuigang; Wang, Lin; Huang, Rui; Han, Yu; Ye, Weiguang; Xiong, Wei; Han, Tianyi; Long, Gen; Wang, Yang; He, Yuheng; Cai, Yuan; Sheng, Ping; Wang, Ning

    2015-01-01

    The metal-insulator transition is one of the remarkable electrical properties of atomically thin molybdenum disulphide. Although the theory of electron-electron interactions has been used in modelling the metal-insulator transition in molybdenum disulphide, the underlying mechanism and detailed transition process still remain largely unexplored. Here we demonstrate that the vertical metal-insulator-semiconductor heterostructures built from atomically thin molybdenum disulphide are ideal capacitor structures for probing the electron states. The vertical configuration offers the added advantage of eliminating the influence of large impedance at the band tails and allows the observation of fully excited electron states near the surface of molybdenum disulphide over a wide excitation frequency and temperature range. By combining capacitance and transport measurements, we have observed a percolation-type metal-insulator transition, driven by density inhomogeneities of electron states, in monolayer and multilayer molybdenum disulphide. In addition, the valence band of thin molybdenum disulphide layers and their intrinsic properties are accessed.

  3. Metal-insulator and charge ordering transitions in oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, Sujay Kumar

    Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase

  4. Metallic behavior and metal insulator transition of two-dimensional holes in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Gao, Xuan

    This thesis is an investigation of the anomalous metallic behavior and metal-insulator transition (MIT) of low density two dimensional (2D) holes in gallium arsenide (GaAs) quantum well. The prevailing one parameter scaling theory of localization for disordered 2D Fermi liquids predicts an insulating ground state at zero magnetic field for small rs---the ratio of Coulomb interaction energy over the Fermi energy. On the other hand, metallic-like temperature (T) dependent transport has been observed in various high mobility Fermionic 2D systems with high rs. Exploring the electronic transport of high mobility hole gas in 2D GaAs quantum wells down to 10mKelvin temperature range, we find that weak localization or single particle quantum interference is greatly suppressed in both the temperature dependence of the resistance and the low field magnetoresistance. We observe that a parallel magnetic field B11 applied in the 2D plane does not affect T *, the temperature/energy scale of the metallic resistance drop of the system, although it suppresses the magnitude of the resistance drop. Furthermore, the temperature dependent conductivity of 2D holes in a strong B 11 agrees with the Coulomb interaction theory of a spin polarized Fermi liquid in both the diffusive (T < h/k Btau) and ballistic (T > h/ kBtau) transport regime, with r being the momentum relaxation time. Our transport data are consistent with the phase separation scenario. Driven by the competition between kinetic energy and Coulomb potential energy, the 2D hole liquid phase separates into a mixture of the localized 2D Fermi liquid phase and a metallic phase below T*. The 2D MIT at zero magnetic field in turn could be due to the localized Fermi liquid phase percolates through the metallic phase as disorder strength increases.

  5. Infrared study of the metal-insulator transition regime in vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Qazilbash, M. M.; Chae, B. G.; Kim, H. T.; Basov, D. N.

    2007-03-01

    Vanadium dioxide (VO2) undergoes a metal-insulator transition at Tc 340 K. The transition region of a VO2 film has been studied with infrared ellipsometry and near-normal incidence reflectance between 40 cm-1 and 5000 cm-1. The measured optical constants are compared to calculations based on effective medium theories. The anomalies in the frequency and temperature dependence of the optical constants will be presented. The implications of the data for the mechanism of the metal-insulator transition will be discussed.

  6. Metal-insulator transition of fermions on a kagome lattice at 1/3 filling.

    PubMed

    Nishimoto, Satoshi; Nakamura, Masaaki; O'Brien, Aroon; Fulde, Peter

    2010-05-14

    We discuss the metal-insulator transition of the spinless fermion model on a kagome lattice at 1/3 filling. The system is analyzed by using exact diagonalization, density-matrix renormalization group methods, and random-phase approximation. In the strong-coupling region, the charge-ordered ground state is consistent with the predictions of an effective model, i.e., plaquette order. We find that the qualitative properties of the metal-insulator transition are totally different depending on the sign of the hopping matrix elements, reflecting the difference in the band structure near the Fermi level.

  7. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    NASA Astrophysics Data System (ADS)

    Otsuka, Yuichi; Yunoki, Seiji; Sorella, Sandro

    2016-01-01

    The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  8. Pure electronic metal-insulator transition at the interface of complex oxides.

    PubMed

    Meyers, D; Liu, Jian; Freeland, J W; Middey, S; Kareev, M; Kwon, Jihwan; Zuo, J M; Chuang, Yi-De; Kim, J W; Ryan, P J; Chakhalian, J

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  9. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  10. Pure electronic metal-insulator transition at the interface of complex oxides

    NASA Astrophysics Data System (ADS)

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  11. Quantum spin liquids and the metal-insulator transition in doped semiconductors.

    PubMed

    Potter, Andrew C; Barkeshli, Maissam; McGreevy, John; Senthil, T

    2012-08-17

    We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum spin liquid state with diffusive charge neutral "spinon" excitations. Such a quantum spin liquid state can appear as an intermediate phase between the metal and the Anderson-Mott insulator. An immediate testable consequence is the presence of metallic thermal conductivity at low temperature in the electrical insulator near the metal-insulator transition. Further, we show that though the transition is second order, the zero temperature residual electrical conductivity will jump as the transition is approached from the metallic side. However, the electrical conductivity will have a nonmonotonic temperature dependence that may complicate the extrapolation to zero temperature. Signatures in other experiments and some comparisons with existing data are made. PMID:23006401

  12. Electrocaloric effect of metal-insulator transition in VO{sub 2}

    SciTech Connect

    Matsunami, Daichi; Fujita, Asaya

    2015-01-26

    The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

  13. Oxygen vacancy induced metal-insulator transition in LaNiO3

    NASA Astrophysics Data System (ADS)

    Misra, Debolina; Kundu, Tarun Kumar

    2016-01-01

    First principle calculations were carried out to examine the metal-insulator transition in LaNiO3 due to changes in oxygen content and consequent alteration of valence state of nickel. The optical properties of all the oxygen deficient LaNiO3-x compounds were calculated to illustrate the electronic structures of the compounds and the change they undergo during the metal-insulator transition. The metallic nature of LaNiO3 is characterized by the Drude peak in the optical conductivity spectra and the high reflectivity it exhibits in the low frequency region. The complex dielectric function and the optical conductivity spectra clearly show that, for x = 0.25, i.e., LaNiO2.75 becomes a semiconductor. As x increases further to 0.5, a gap in the optical spectra appears, indicating the insulating nature of LaNiO2.5. The insulating state of LaNiO2.5 is best described by the GW+HSE method which gives a good estimation of the optical gap of the material. The absorption spectra of LaNiO2.5 clearly reveal that this material is transparent in the low frequency region. This metal-insulator transition is followed by another insulator to semiconductor transition, as x is increased further to 1 i.e., in case of LaNiO2. The metal-insulator transition is then explained on the basis of electron localization function calculations, which show the increase in the covalent bonding in the system as the transition to the insulating state sets in.

  14. Buckley Prize Talk: The Suprerconductor-(Metal)-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kapitulnik, Aharon

    2015-03-01

    While the classical theory of phase transitions has been extraordinarily successful, there are several reasons to exercise caution when applying this approach to the zero temperature superconducting transition. First, experimental identification of the relevant phases requires extrapolation to zero temperature, which becomes complicated, especially when one needs to identify sources of dissipation. In addition, since superconductivity may be highly inhomogeneous as appreciable superconducting order parameter may be concentrated in ``superconducting puddles'' due to disorder and/or spontaneous phase separation, the nature of the quantum phase transition to a superconducting state may be highly anomalous, where the system attempts to optimizes the formation of puddles with the Josephson coupling among them to obtain global superconductivity. In this talk we will review some of the consequences of these considerations, emphasizing the possible emergence of anomalous metallic phases close to the superconductor-insulator transition.

  15. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  16. Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

    SciTech Connect

    Paul, Sanhita Ghosh, Anirudha Raj, Satyabrata

    2014-04-24

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

  17. Elastic behavior around metal-insulator transition in PrRu 4P 12

    NASA Astrophysics Data System (ADS)

    Nakanishi, Y.; Kumagai, T.; Oikawa, M.; Saha, S. R.; Sugawara, H.; Sato, H.; Yoshizawa, M.

    2006-03-01

    Elastic properties of PrRu 4P 12 have been investigated by means of the ultrasonic measurement. A clear bend was observed in elastic constants C11, (C11-C12)/2 and C44 at metal-insulator transition temperature TMI of 62.3 K. Furthermore, C11, and ( C11-C12)/2 exhibits a pronounced elastic softening towards low temperature in the temperature range down to 1.5 K. This fact suggests strongly that PrΓ3 non-Kramers doublet ground state is realized in PrRu 4P 12 under the crystalline electric field (CEF) potential. This also suggests that an orbital degree of freedom still remains below TMI and a quadrupolar ordering has nothing to do with the metal-insulator transition. The elastic property and 4f ground state of Pr ions in this system will be discussed from the view point of CEF effect.

  18. Disorder and Metal-Insulator Transitions in Weyl Semimetals.

    PubMed

    Chen, Chui-Zhen; Song, Juntao; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X C

    2015-12-11

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice. PMID:26705648

  19. Control of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light.

    PubMed

    Lin, Jheng-Cyuan; Tra, Vu Thanh; Tsai, Dung-Sheng; Lin, Tai-Te; Huang, Po-Cheng; Hsu, Wei-Lun; Wu, Hui Jun; Huang, Rong; Van Chien, Nguyen; Yoshida, Ryuji; Lin, Jiunn-Yuan; Ikuhara, Yuichi; Chiu, Ya-Ping; Gwo, Shangjr; Tsai, Din Ping; He, Jr-Hau; Chu, Ying-Hao

    2016-01-27

    The coupling of the localized surface plasmon resonance of Au nanoparticles is utilized to deliver a visible-light stimulus to control conduction at the LaAlO3 /SrTiO3 interface. A giant photoresponse and the controllable metal-insulator transition are characterized at this heterointerface. This study paves a new route to optical control of the functionality at the heterointerfaces.

  20. Metal insulator transitions in perovskite SrIrO{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Jeong, Yoon Hee; Kim, Ki-Seok

    2014-12-07

    Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO{sub 3} thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO{sub 3} (110), DyScO{sub 3} (110), SrTiO{sub 3} (001), and NdGaO{sub 3} (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO{sub 3}, unusual non-Fermi liquid characteristics emerge in resistivity as Δρ ∝ T{sup ε} with ε evolving from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.

  1. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature. PMID:25215974

  2. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature.

  3. Control of plasmonic nanoantennas by reversible metal-insulator transition

    DOE PAGES

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in activemore » nanophotonics.« less

  4. Control of plasmonic nanoantennas by reversible metal-insulator transition

    SciTech Connect

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-09-11

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. In conclusion, these unique features open up promising novel applications in active nanophotonics.

  5. Chaos in fermionic many-body systems and the metal-insulator transition

    SciTech Connect

    Papenbrock, T.; Pluhar, Z.; Tithof, J.; Weidenmueller, H. A.

    2011-03-15

    We show that finite Fermi systems governed by a mean field and a few-body interaction generically possess spectral fluctuations of the Wigner-Dyson type and are, thus, chaotic. Our argument is based on an analogy to the metal-insulator transition. We construct a sparse random-matrix scaffolding ensemble (ScE) that mimics this transition. Our claim then follows from the fact that the generic random-matrix ensemble modeling a fermionic interacting many-body system is much less sparse than ScE.

  6. Chaos in Fermionic Many-Body Systems and the Metal Insulator Transition

    SciTech Connect

    Papenbrock, Thomas F; Pluhar, Z.; Tithof, J.; Weidenmueller, H. A.

    2011-01-01

    We show that finite Fermi systems governed by a mean field and a few-body interaction generically possess spectral fluctuations of the Wigner-Dyson type and are thus chaotic. Our proof is based on an analogy to the metal-insulator transition. We construct a sparse random-matrix ensemble H^{cr} that mimicks that transition. Our claim then follows from the fact that the generic random-matrix ensemble modeling a fermionic interacting many-body is much less sparse than H^{cr}.

  7. Pure electronic metal-insulator transition at the interface of complex oxides

    DOE PAGES

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; et al

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

  8. Broken symmetry and strangeness of the semiconductor impurity band metal-insulator transition.

    PubMed

    Phillips, J C

    1998-06-23

    The filamentary model of the metal-insulator transition in randomly doped semiconductor impurity bands is geometrically equivalent to similar models for continuous transitions in dilute antiferromagnets and even to the lambda transition in liquid He, but the critical behaviors are different. The origin of these differences lies in two factors: quantum statistics and the presence of long range Coulomb forces on both sides of the transition in the electrical case. In the latter case, in addition to the main transition, there are two satellite transitions associated with disappearance of the filamentary structure in both insulating and metallic phases. These two satellite transitions were first identified by Fritzsche in 1958, and their physical origin is explained here in geometrical and topological terms that facilitate calculation of critical exponents.

  9. Origin of the metal-insulator transition of indium atom wires on Si(111)

    NASA Astrophysics Data System (ADS)

    Kim, Sun-Woo; Cho, Jun-Hyung

    2016-06-01

    As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to Fermi surface nesting. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4 ×1 phase to the low-temperature 8 ×2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the ×2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls-instability-driven CDW formation.

  10. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  11. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

    SciTech Connect

    Bubel, Simon; Glaudell, Anne M.; Mates, Thomas E.; Chabinyc, Michael L.; Hauser, Adam J.; Stemmer, Susanne

    2015-03-23

    For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO{sub 3} in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

  12. Ultrafast electronic dynamics in the metal-insulator transition compound NdNiO3

    NASA Astrophysics Data System (ADS)

    Ruello, P.; Zhang, S.; Laffez, P.; Perrin, B.; Gusev, V.

    2007-10-01

    Visible ultrafast optical property studies have been performed in the metal-insulator transition compound NdNiO3 from room temperature down to 16K . A clear slowing down of the electronic relaxation is reported when the system becomes insulating. Two characteristic times of electronic relaxation have been found in the insulating phase while a single one is observed in the metallic state. Moreover, the magnitude of the ultrafast electronic transient reflectivity exhibits a drastic increase in the insulating state. Finally, a hysteresis of the electronic response is evidenced in accordance with electrical resistivity measurements.

  13. Phase coexistence and metal-insulator transition in few-layer phosphorene: a computational study.

    PubMed

    Guan, Jie; Zhu, Zhen; Tománek, David

    2014-07-25

    Based on ab initio density functional calculations, we propose γ-P and δ-P as two additional stable structural phases of layered phosphorus besides the layered α-P (black) and β-P (blue) phosphorus allotropes. Monolayers of some of these allotropes have a wide band gap, whereas others, including γ-P, show a metal-insulator transition caused by in-layer strain or changing the number of layers. An unforeseen benefit is the possibility to connect different structural phases at no energy cost. This becomes particularly valuable in assembling heterostructures with well-defined metallic and semiconducting regions in one contiguous layer.

  14. Metal-Insulator Transition in the Hubbard Model: Correlations and Spiral Magnetic Structures

    NASA Astrophysics Data System (ADS)

    Timirgazin, Marat A.; Igoshev, Petr A.; Arzhnikov, Anatoly K.; Irkhin, Valentin Yu.

    2016-03-01

    The metal-insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the t-t^' Hubbard model at half-filling by using both the generalized for the case of spiral order Hartree-Fock approximation (HFA) and Kotliar-Ruckenstein slave-boson approach. It turns out that the magnetic scenario of MIT becomes superior over the non-magnetic one. The electron correlations lead to some suppression of the spiral phases in comparison with HFA. We found the presence of a metallic antiferromagnetic (spiral) phase in the case of three-dimensional lattices.

  15. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  16. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    SciTech Connect

    Huber-Rodriguez, Benjamin; Ji, Heng; Chen, Chih-Wei; Kwang, Siu Yi; Hardy, Will J.; Morosan, Emilia; Natelson, Douglas

    2014-09-29

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO{sub 2} material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO{sub 2} powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  17. Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.

    PubMed

    Syrlybekov, Askar; Wu, Han-Chun; Mauit, Ozhet; Wu, Ye-Cun; Maguire, Pierce; Khalid, Abbas; Coileáin, Cormac Ó; Farrell, Leo; Heng, Cheng-Lin; Abid, Mohamed; Liu, Huajun; Yang, Li; Zhang, Hong-Zhou; Shvets, Igor V

    2015-09-01

    Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

  18. Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

    NASA Astrophysics Data System (ADS)

    Omori, Yukiko; Rüegg, Andreas; Sigrist, Manfred

    2014-10-01

    Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott and a band insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both on-site and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.

  19. Redox chemistry and metal-insulator transitions intertwined in a nano-porous material.

    PubMed

    Maximoff, Sergey N; Smit, Berend

    2014-06-06

    Metal-organic frameworks are nano-porous adsorbents of relevance to gas separation and catalysis, and separation of oxygen from air is essential to diverse industrial applications. The ferrous salt of 2,5-dihydroxy-terephthalic acid, a metal-organic framework of the MOF74 family, can selectively adsorb oxygen in a manner that defies the classical picture: adsorption sites either do or do not share electrons over a long range. Here we propose, and then justify phenomenologically and computationally, a mechanism. Charge-transfer-mediated adsorption of electron acceptor oxygen molecules in the metal-organic framework, which is a quasi-one-dimensional electron-donor semiconductor, drives and is driven by quasi-one-dimensional metal-insulator-metal transitions that localize or delocalize the quasi-one-dimensional electrons. This mechanism agrees with the empirical evidence, and predicts a class of nano-porous semiconductors or metals and potential adsorbents and catalysts in which chemistry and metal-insulator-metal transitions intertwine.

  20. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    SciTech Connect

    Lysenko, Sergiy Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph; Aparicio, Joaquin; Sepúlveda, Nelson

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  1. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  2. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  3. Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Krowne, C. M.; Charipar, K. M.; Bussmann, K.; Chervin, C. N.; Pala, I. R.; Rolison, D. R.

    2016-02-01

    The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO3/SrTiO3) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). In this report, we demonstrate the existence of a metal-insulator transition (MIT) in highly disordered RuO2 nanoskins with carrier concentrations that are one-to-six orders of magnitude higher and with mobilities that are one-to-six orders of magnitude lower than those reported previously for 2D oxides. The presence of an MIT and the accompanying atypical electronic characteristics place this form of the oxide in a highly diffusive, strong disorder regime and establishes the existence of a metallic state in 2D that is analogous to the three-dimensional case.

  4. Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO{sub 3}

    SciTech Connect

    Scagnoli, V.; Staub, U.; Mulders, A. M.; Janousch, M.; Meijer, G. I.; Hammerl, G.; Tonnerre, J. M.; Stojic, N.

    2006-03-01

    Soft x-ray resonant scattering at the Ni L{sub 2,3} edges is used to test models of magnetic- and orbital-ordering below the metal-insulator transition in NdNiO{sub 3}. The large branching ratio of the L{sub 3} to L{sub 2} intensities of the (1/2 0 1/2) reflection and the observed azimuthal angle and polarization dependence originates from a noncollinear magnetic structure. The absence of an orbital signal and the noncollinear magnetic structure show that the nickelates are materials for which orbital ordering is absent at the metal-insulator transition.

  5. Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    PubMed

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  6. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    PubMed Central

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  7. The metal-insulator transition in vanadium dioxide explored by optical methods

    NASA Astrophysics Data System (ADS)

    Qazilbash, M. M.; Burch, K. S.; Basov, D. N.; Chae, B. G.; Kim, H. T.

    2006-03-01

    The nature of the metal-insulator transition (MIT) in vanadium dioxide (VO2) remains a matter of debate. At the center of the debate is the relative importance of electron-electron correlations to the MIT. We study the MIT with spectroscopic ellipsometry on VO2 films grown on sapphire substrates, and determine the optical constants in the insulating and metallic states from 50 meV to 5.5 eV. The changes in the optical constants with temperature in the metallic state have been tracked from 360 K up to 500 K. The redistribution of spectral weight in the real part of the optical conductivity as a result of the MIT will be discussed with emphasis on the changes to the interband transitions. This work has been supported by Department of Energy Grant No.DE-FG03-00ER45799.

  8. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    NASA Astrophysics Data System (ADS)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  9. Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams

    NASA Astrophysics Data System (ADS)

    Stabile, Adam A.; Singh, Sujay K.; Wu, Tai-Lung; Whittaker, Luisa; Banerjee, Sarbajit; Sambandamurthy, G.

    2015-07-01

    We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT, and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures (T) far below the critical temperature (Tc) of MIT, in nanoscale vanadium oxide devices, show that both T and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at T ≪ T c , electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as T approaches Tc.

  10. Raman study of the metal-insulator transition in pyrochlore Mo oxides

    NASA Astrophysics Data System (ADS)

    Taniguchi, K.; Katsufuji, T.; Iguchi, S.; Taguchi, Y.; Takagi, H.; Tokura, Y.

    2004-09-01

    Raman scattering spectra have been investigated for the correlated 4d -electron system, R2Mo2O7 ( R=Nd , Sm , Gd , Tb , Dy , Nd1-xDyx ), which undergoes a metal-insulator transition with changing the rare-earth ion R , or equivalently the one-electron bandwidth. It is found that several phonon peaks modulating the Mo-O-Mo bond angle appear in the metallic phase ( R=Nd , Sm , Gd , Nd1-xDyx ), whereas they are remarkably suppressed in intensity in the insulating phase ( R=Tb , Dy ). This result indicates that the phonon modes of R2Mo2O7 are coupled with the electron-hole excitation across the Fermi level, thus probing sensitively the low-energy charge dynamics in the vicinity of the bandwidth-control Mott transition.

  11. Metal-insulator transitions of bulk and domain-wall states in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, Kentaro

    A family of pyrochlore iridates R2Ir2O7 offers an ideal platform to explore intriguing phases such as topological Mott insulator and Weyl semimetal. Here we report transport and spectroscopic studies on the metal-insulator transition (MIT) induced by the modulations of effective electron correlation and magnetic structures, which is finely tuned by external pressure, chemical substitutions (R = Nd1-x Prx and SmyNd1-y) , and magnetic field. A reentrant insulator-metal-insulator transition is observed near the paramagnetic insulator-metal phase boundary reminiscent of a first-order Mott transition for R = SmyNd1-y compounds (y~0.8). The metallic states on the magnetic domain walls (DWs), which are observed for R = Nd in real space as well as in transport properties, is simultaneously turned into the insulating one. These findings imply that the DW electronic state is intimately linked to the bulk states. For the mixed R = Nd1-x Prx compounds, the divergent behavior of resistivity with antiferromagnetic order is significantly suppressed by applying a magnetic field along [001] direction. It is attributed to the phase transition from the antiferromagnetic insulating state to the novel Weyl (semi-)metal state accompanied by the change of magnetic structure. The present study combined with experiment and theory suggests that there are abundant exotic phases with physical parameters such as electron correlation and Ir-5 d magnetic order pattern. Work performed in collaboration with J. Fujioka, B.-J. Yang, C. Terakura, N. Nagaosa, Y. Tokura (University of Tokyo, RIKEN CEMS), J. Shiogai, A. Tsukazaki, S. Nakamura, S. Awaji (Tohoku University). 1This work was supported by JSPS FIRST Program and Grant-in-Aid for Scientific Research (Grants No. 80609488 and No. 24224009).

  12. Metal-insulator transitions in non-stoichiometric, chromium, and titanium doped vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Metcalf, Patricia Ann

    The major focus of the research was on the preparation of vanadium oxide thin films with metal-insulator transitions equivalent to those found in single crystals. Thin films of VO2, V1-x M'xO 2 (M' = Cr, Ti, Mo, W), V3O5, V6O 13, V2O3, and (V1-xMx) 2O3 (M = Cr, Ti) were prepared by the reduction of sol-gel derived vanadium oxide films in inert atmospheres. Subsequent anneals of un-doped V2O3 films in controlled oxygen atmosphere conditions yielded non-stoichiometric V2-yO3 films. In addition, thick films of V2O3 were produced using laser lift-off and particle embedding techniques. Vanadium oxide nano-crystals and nano-powders were synthesized via hydrothermal techniques for use as the embedded particle materials. The effect of thickness and orientation on the structure was examined in the V2O3 films. The majority of the films were grown on (0001)-oriented sapphire substrates, in addition films were grown on (11 20)-oriented sapphire, x and z-oriented-LiTaO3, (101)-oriented SiO2, and ZnSe substrates. V2O3 films with thicknesses of less than 450 nm grown on (0001)-oriented sapphire were shown to consist of well oriented, 10--100 nm diameter columnar grains when examined by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. Films deposited on (0001)-oriented sapphire were found to possess a preferred (0001) orientation and those deposited on (11 20)-oriented sapphire, a preferred (1120) orientation. The x-ray diffraction patterns indicated that other orientations were present for films thicker than 450 nm. The optical transmission and electrical conductivity measurements on films revealed metal-insulator transitions characteristic of single crystal V2O3, (V1-xCrx)2O 3, (V1-zTiz)2O3, V 2-yO3 and VO2. Upon cooling from room temperature, the V2O3 films displayed a reversible metal-insulator transition at about 150 K, with an increase in electrical resistivity of about 106 and a change in optical transmission of

  13. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    SciTech Connect

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni; Hildebrand, Helga; Schmuki, Patrik

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  14. The metal-insulator phase transition in the strained GdBiTe3

    NASA Astrophysics Data System (ADS)

    Van Quang, Tran; Kim, Miyoung

    2013-05-01

    In this work, we investigated the electronic structures and magnetic properties of the GdBiTe3 alloy employing a first-principles all-electron density-functional approach, aiming to understand the magnetic phase stability and electronic structure dependences on the exchange correlation potential and the strain. The results show that the ferromagnetic phase is energetically more stable over the paramagnetic phase and the metal-insulator phase transition occurs upon the lattice distortion via the strain along the perpendicular c direction, which is not influenced by the strength of correlation energy introduced to describe the localized f orbitals. Thermoelectric transport properties are also investigated to reveal that the compressive strain markedly enhances the Seebeck coefficient, which is reduced in comparison with the Bismuth telluride due to the Gd doping.

  15. Percolative Metal-Insulator transition in the doped Hubbard-Holstein model with the Gutzwiller Approach

    NASA Astrophysics Data System (ADS)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    Motivated by the recent progress in understanding of Mott insulators away from half filling, observed in many perovskite oxides, we study the metal-insulator transition in the Hubbard-Holstein model, which contains both the Coulomb and the electron-lattice (Jahn Teller) interactions by using the Gutzwiller variational method. We find that strong electron-lattice Interaction leads to phase separation, which however can be frustrated due to the long-range Coulomb interaction, resulting in a mixed phase consisting of puddles of metallic phases embedded in an insulating matrix. When the dopant concentration exceeds a threshold value xc , the metallic part forms a percolating network leading to metallic conduction. Depending on the strength of the electron-lattice interaction, xc can be of the order of 0.05 - 0.20 or so, which is the typical value observed in the perovskites.

  16. Mott metal-insulator transition in a metallic liquid - Gutzwiller molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Barros, Kipton; Chern, Gia-Wei; Batista, Cristian D.; Kress, Joel D.; Kotliar, Gabriel

    2015-03-01

    Molecular dynamics (MD) simulations are crucial to modern computational physics, chemistry, and materials science, especially when combined with potentials derived from density-functional theory. However, even in state of the art MD codes, the on-site Coulomb repulsion is only treated at the self-consistent Hartree-Fock level. This standard approximation may miss important effects due to electron correlations. The Gutzwiller variational method captures essential correlated-electron physics yet is much faster than, e.g., the dynamical-mean field theory approach. We present our efficient Gutzwiller-MD implementation. With it, we investigate the Mott metal-insulator transition in a metallic fluid and uncover several surprising static and dynamic properties of this system.

  17. Phase coexistence and Mott metal-insulator transition in the doped Hubbard-Holstein model

    NASA Astrophysics Data System (ADS)

    Moradi Kurdestany, Jamshid; Satpathy, Sashi

    2015-03-01

    Motivated by recent progress in the understanding of the Mott insulators away from half filling [?], often observed in the oxide materials, we study the role of the electron-lattice interaction vis-à-vis the electron correlations by studying the one-band Hubbard-Holstein model using the Gutzwiller variational method. Our theory predicts phase separation for sufficiently strong electron-lattice interaction, which however is frustrated in the solid due to the long-range Coulomb interaction of the dopant atoms, resulting in puddles of metallic phases embedded in the insulating matrix. Metallic state occurs when the volume fraction of the metallic phase exceeds the percolation threshold, as the dopant concentration is increased. Connection is made with the experimentally observed metal-insulator transition in the complex oxides.

  18. Local Peltier-effect-induced reversible metal-insulator transition in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-06-01

    We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal-insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  19. Hallmarks of Metal Insulator transition in Doped Sr2IrO4

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Wang, Qiang; Dhaka, Rajendra; Waugh, Justin; Reber, Theodore; Li, Haoxiang; Parham, Stephen; Zhou, Xiaoqing; Park, Seung Ryong; Qi, Tongfei; Korneta, Oleksandr; Plumb, Nicholas; Bostwick, Aaron; Rotenberg, Eli; Denlinger, Jonathan; Hermele, Michael; Cao, Gang; Dessau, Daniel

    2014-03-01

    How Mott insulators acquire metallicity upon the introduction of extra carriers lies at the heart of correlated electron physics. The evolution of the electronic structure and low energy dynamics in the ultra-low doped region where the Mottness begins to break down is a critical place to study this physics. We report ARPES studies of the Rh and La doped Sr2IrO4 and show the appearance and evolution of a pseudogap and Fermi arcs. Further more we present evidence how the Mott gap breaks down with a profound change in the band structure. The experimental results in the doped iridates resemble those observed in the cuprate systems, which are prototype Mott insulators, and suggest we could establish a series of signatures that occur in the metal insulator transition. Now at Los Alamos National Lab.

  20. Systematics in the metal-insulator transition temperatures in vanadium oxides

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Reisner, G. M.

    2016-01-01

    Nine of the known vanadium oxides, VO 2 - 1 / n (n - a positive or negative integer) with n = 2 - 6 , 8 , 9 , ∞ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures TMIT (V7O13 is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in TMIT as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if TMIT is the absolute value of the difference between TM(n) and TP(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of TM-TP versus 1/n lie on, or close to, two simple straight lines; one is TM -TP =T∞(7 / n - 1) for V3O5, V4O7, V5O9, V7O13, V8O15, V9O17 and VO2 and the other is TM -TP =T∞(3 / n - 1) for V2O3, V6O11 and VO2.

  1. Selective electrochemical reactivity of rutile VO2 towards the suppression of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Singh, Sujay; Abtew, Tesfaye A.; Horrocks, Gregory; Kilcoyne, Colin; Marley, Peter M.; Stabile, Adam A.; Banerjee, Sarbajit; Zhang, Peihong; Sambandamurthy, G.

    2016-03-01

    We demonstrate through electrolyte gating measurements of a single nanobeam that the rultile phase of VO2 is electrochemically more reactive than the monoclinic phase. Our results show that the complete suppression of the metal-insulator transition and stabilization of the metallic phase is possible when gate voltage is applied in the rutile metallic phase. The results are discussed based on the formation of oxygen vacancies wherein accommodation of a high concentration of vacancies in the rutile phase selectively stabilizes it by disrupting dimerization of adjacent V-V pairs required for a transition to the monoclinic phase. The creation of oxygen vacancies is proposed to proceed through the oxidation of the electrolyte. Raman spectroscopy data suggest surface metallization upon electrolyte gating with an initial coexistence of insulating monoclinic and metallic domains. The selective electrochemical reactivity of the rutile phase and the resulting defect-induced stabilization of this phase across a vastly expanded temperature window suggest a facile defect engineering route to tune electronic phase transitions.

  2. Metal-insulator transition in low dimensional La{sub 0.75}Sr{sub 0.25}VO{sub 3} thin films

    SciTech Connect

    Dao, Tran M.; Mondal, Partha S.; Takamura, Y.; Arenholz, E.; Lee, Jaichan

    2011-06-15

    We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La{sub 0.75}Sr{sub 0.25}VO{sub 3} films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electronelectron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

  3. Infrared evidence of a Slater metal-insulator transition in NaOsO3

    PubMed Central

    Vecchio, I. Lo; Perucchi, A.; Di Pietro, P.; Limaj, O.; Schade, U.; Sun, Y.; Arai, M.; Yamaura, K.; Lupi, S.

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO3 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO3 is the first known 3D Slater insulator. PMID:24141899

  4. Percolative metal-insulator transition in LaMnO3

    NASA Astrophysics Data System (ADS)

    Sherafati, M.; Baldini, M.; Malavasi, L.; Satpathy, S.

    2016-01-01

    We show that the pressure-induced metal-insulator transition (MIT) in LaMnO3 is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, one, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold vc≈0.29 . Measured high-pressure resistivity follows the percolation scaling laws quite well, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

  5. Electric field gating near the metal-insulator transition using ionic liquid dielectrics

    NASA Astrophysics Data System (ADS)

    Hebard, Arthur; Misra, Rajiv; McCarthy, Mitchell

    2007-03-01

    Ionic liquids (ILs) are highly polar low-melting-temperature binary salts typically comprising nitrogen-containing organic cations and inorganic anions. Since there is no solvent, ILs are distinctly different from aqueous, organic, gel or polymer electrolytes. Using either coplanar or overlay gate configurations in which the IL is the gate dielectric, we demonstrate room temperature field-induced resistance changes on the order of a factor of 10^4 for thin conducting InOx films. There is a large asymmetry manifested by the significantly larger changes in impedance for negative gate voltage Vg (electron depletion) compared to positive Vg (electron enhancement). The pronounced frequency dependence over the range 10-2--10^6 Hz, due to the low ionic mobilities in the dielectric fluid, is modeled well by a simple RC circuit from which an effective areal gate capacitance can be derived. The induced surface charge densities and field-effect mobilities noticeably exceed those that can be achieved on similar films using AlOx dielectrics. In addition, the charge state can be frozen in by reducing the temperature below the glass transition (˜250K) of the IL, thus providing an opportunity for electric field tuning of metal-insulator transitions in a variety of novel thin-film systems.

  6. Metal-Insulator Transition in nanoparticle solids: a kinetic Monte Carlo study

    NASA Astrophysics Data System (ADS)

    Zimanyi, Gergely; Qu, Luman; Voros, Marton

    Nanoparticle (NP) solids recently emerged as a promising platform for high performance electronic/optoelectronic devices, including third generation solar cells, light emitting diodes and field effect transistors. A challenge of NP films is that their charge transport is in the unfavorable hopping/insulating regime. Recent experiments showed that it is possible to tune the NP solids through a Metal-Insulator Transition (MIT) via ligand engineering and ALD matrix infilling. However, the microscopic understanding of this transition is not yet clear. To address this challenge, we developed a Kinetic Monte Carlo transport modeling framework that builds on determining NP parameters from ab initio-based calculations of the energy level structures, charging energies and overlaps, and then uses these to compute the hopping mobility across a disordered NP array by the Marcus and Miller-Abrahams mechanisms. We reproduced and explained the observed non-monotonous dependence of the mobility on the NP diameter. Centrally, we extended our platform to be able to capture the MIT. We determined the MIT phase boundary on the (NP-NP overlap - Electron density) plane. We demonstrated that all mobilities fall on a universal scaling curve, allowing us to determine the critical behavior across the MIT. Supported by: UC Davis Office of Research RISE ANSWER Grant.

  7. ARPES studies on metal-insulator-transition in NiS2-xSex

    NASA Astrophysics Data System (ADS)

    Han, Garam; Kim, Y. K.; Kyung, W. S.; Kim, Chul; Koh, Y. Y.; Lee, K. D.; Kim, C.

    2012-02-01

    Understanding Metal insulator transition (MIT) is one of the most challenging issues in condensed matter physics. NiS2-xSex (NSS) is a well known system for band width controlled MIT studies while most of High-Tc superconductors (HTSCs) are described within band filling MIT picture. Cubic pyrite NiS2 is known as a charge-transfer (CT) insulator and easily forms a solid solution with NiSe2, which is a good metal even though it is isostrucural and isoelectronic to NiS2. MIT is induced by Se alloying and is observed at a low temperature for x=0.5. The important merit is that there is no structure transition which often accompanies MIT. In spite of the importance of the system, even the experimental band dispersion is not known so far along with many controversies. For this reason, we performed angle resolved photoemission spectroscopy on high quality single crystals and successfully obtained Fermi surface maps of x=0.5, x=0.7 and x=0.8 systems (the metallic side). By doping dependent systematic studies on NSS and comparison with LDA calculation, we try to explain the relationship between band width and the MIT.

  8. Unraveling metal-insulator transition mechanism of VO₂ triggered by tungsten doping.

    PubMed

    Tan, Xiaogang; Yao, Tao; Long, Ran; Sun, Zhihu; Feng, Yajuan; Cheng, Hao; Yuan, Xun; Zhang, Wenqing; Liu, Qinghua; Wu, Changzheng; Xie, Yi; Wei, Shiqiang

    2012-01-01

    Understanding the mechanism of W-doping induced reduction of critical temperature (T(C)) for VO(2) metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calculations, we unveil the atomic structure evolutions of W dopant and its role in tailoring the T(C) of VO(2) MIT. We find that the local structure around W atom is intrinsically symmetric with a tetragonal-like structure, exhibiting a concentration-dependent evolution involving the initial distortion, further repulsion, and final stabilization due to the strong interaction between doped W atoms and VO(2) lattices across the MIT. These results directly give the experimental evidence that the symmetric W core drives the detwisting of the nearby asymmetric monoclinic VO(2) lattice to form rutile-like VO(2) nuclei, and the propagations of these W-encampassed nuclei through the matrix lower the thermal energy barrier for phase transition.

  9. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Bohnenbuck, B.; Chuang, Y.-D.; Geck, J.; Tokura, Y.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Sawatzky, G. A.; Damascelli, A.

    2010-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate an incipient instability of the parent compound, are detected below the transition. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x˜0.05 Mn substitution. In collaboration with A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley Lab), I. Zegkinoglou, M.W. Haverkort (MPI, Stuttgart), I.S. Elfimov, D.G. Hawthorn (UBC), R. Mathieu, S. Satow, H. Takagi (Tokyo), H.-H. Wu and C. Sch"ußler-Langeheine (Cologne).

  10. Phonon modes and metal-insulator transition in GaN crystals under pressure

    NASA Astrophysics Data System (ADS)

    Falkovsky, L. A.; Knap, W.; Chervin, J. C.; Wisniewski, P.

    1998-05-01

    Close inspection of experimental results given by Perlin and co-workers [Phys. Status Solidi B 198, 223 (1996); Phys. Rev. B 45, 83 (1992)] shows that three phenomena were observed in that work: optical-phonon shift and splitting under pressures, which can be explained in a symmetry consideration for the Γ point of hexagonal crystals; inhomogeneous broadening and shift of phonon frequencies due to strain fluctuations which are described in the present paper using Dyson's equation for the phonon Green's function; phonon hardening and decreasing of width in the metal-insulator transition in GaN under pressure of about 22 GPa. The last effect results from the interaction between electrons and optical phonons, but this interaction makes no impact on the line shape (Fano effect). We find that the phonon line shape in semiconductors with small carrier concentration is determined by strain fluctuations or imperfections. Estimates show that the electron-phonon interaction is the reason why optical phonons are not detected in typical metals.

  11. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Hippalgaonkar, Kedar; Lee, Sangwook; Ko, Changhyun; Yang, Fan; Suh, Joonki; Liu, Kai; Wang, Kevin; Zhang, Xiang; Dames, Chris; Wu, Junqiao

    In an electrically conductive solid, the Wiedemann-Franz (WF) law requires the electronic contribution to thermal conductivity to be proportional to the product of electrical conductivity and absolute temperature , where the ratio is the Lorenz number, typically not much different from the Sommerfeld value L0 = 2.44x10-8 W-ohm-K-2 at room temperature. The WF law reflects a basic property of metals where charge and heat are both carried by the same quasiparticles that both experience elastic scattering. At temperatures below the Debye temperature, the WF law has been experimentally shown to be robust in conventional conductors, with violations theoretically predicted or experimentally observed in strongly correlated electron systems or Luttinger liquids. However, the experimentally observed violations are at very low temperatures. Here we report breakdown of the WF law in a strongly correlated metal, in which the electronic thermal conductivity and L nearly vanish at temperatures above room temperature, where the electronic thermal conductivity amounts to only <~5% of the value expected from the WF law. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition.

  12. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl

    NASA Astrophysics Data System (ADS)

    Naka, Takashi; Nikitin, Artem M.; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-01

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) γ . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state.

  13. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl.

    PubMed

    Naka, Takashi; Nikitin, Artem M; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-20

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) (γ) . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state.

  14. Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Kizuka, Hinako; Yagi, Takashi; Jia, Junjun; Yamashita, Yuichiro; Nakamura, Shinichi; Taketoshi, Naoyuki; Shigesato, Yuzo

    2015-05-01

    Thermal conductivity of a 300-nm-thick VO2 thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2 and Mo/VO2/Mo films with a VO2 thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2 films were deposited by reactive rf magnetron sputtering using a V2O3 target and an Ar-O2 mixture gas at 645 K. The VO2 films consisted of single phase VO2 as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2 film decreased abruptly from 6.3 × 10-1 to 5.3 × 10-4 Ω cm across the TMIT of around 325-340 K. The thermal conductivity of the VO2 film increased from 3.6 to 5.4 W m-1 K-1 across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.

  15. Magnetic and Transport Properties of Amorphous GdGe Alloys near the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Sinenian, Nareg; Smith, D. J.

    2005-03-01

    The temperature and field dependence of magnetization and conductivity of amorphous Ge doped with the rare earth Gd (a-GdxGe1-x) has been measured for a range of x near the metal-insulator transition 0.08 < x <0.25). As in previous work on a-Gd-Si, high field magnetization and low field susceptibility per Gd atom in the paramagnetic state above the spin glass freezing temperature are significantly suppressed below that of non-interacting Gd, indicative of strong antiferromagnetic interactions. However, unlike a-Gd-Si, the low field susceptibility does not fit a Curie-Weiss law, instead showing 1/T^α dependence. As in a-Gd-Si, Gd causes localization of charge carriers below a characteristic temperature T*, which is also an onset of significant negative magnetoresistance MR. Both T* and the magnitude of MR are however significantly less in a-Gd-Ge than in comparable a-Gd-Si alloys. It is suggested that the large effects of matrix (Ge vs Si) are due to differences in dielectric constant and bandgap, which cause changes in screening, thereby altering the effect of the magnetic moments of Gd on both localization of carriers and on the indirect mediated Gd-Gd exchange interactions. We thank the NSF for support.

  16. Metal-insulator transition in epitaxial perovskite SrIrO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gruenewald, J. H.; Terzic, J.; Nichols, J.; Cao, G.; Seo, S. S. A.

    2014-03-01

    Iridates have drawn considerable interest due to their exotic phases arising from the interplay of the strong spin-orbit interaction and the electronic correlation. Here we will discuss our experimental investigations of the electronic properties of epitaxially strained SrIrO3 thin-films. The orthorhombic perovskite crystal phase of SrIrO3 is synthesized as a thin film (~ 20 nm) on various substrates of (LaAlO3)0.3-(Sr2AlTaO6)0.7, SrTiO3, GdScO3, and MgO using pulsed laser deposition. We have observed that when the in-plane lattice parameters are tuned from tensile to compressive strain, the electronic behavior of the strained SrIrO3 thin-films changes from metallic to insulating. All samples have sheet resistance below 13 k Ω/ □, and the insulating samples were fit using the Mott variable-range-hopping equation at low temperatures (< 15 K), which is believed to be the conducing mechanism of Anderson localization at finite temperature. The strain-dependent metal-insulator transition in epitaxial perovskite SrIrO3 thin-films offers an important insight into the electronic structure of these strongly correlated, spin-orbit-coupled materials. This work was supported by grants EPS-0814194, DMR-0856234, DMR-1265162, and KSEF-148-502-12-303.

  17. Metal-insulator transition induced in CaVO{sub 3} thin films

    SciTech Connect

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  18. Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics.

    PubMed

    Chen, Yuanping; Sun, Y Y; Wang, H; West, D; Xie, Yuee; Zhong, J; Meunier, V; Cohen, Marvin L; Zhang, S B

    2014-08-22

    A three-dimensional elemental carbon kagome lattice, made of only fourfold-coordinated carbon atoms, is proposed based on first-principles calculations. Despite the existence of 60° bond angles in the triangle rings, widely perceived to be energetically unfavorable, the carbon kagome lattice is found to display exceptional stability comparable to that of C(60). The system allows us to study the effects of triangular frustration on the electronic properties of realistic solids, and it demonstrates a metal-insulator transition from that of graphene to a direct gap semiconductor in the visible blue region. By minimizing s-p orbital hybridization, which is an intrinsic property of carbon, not only the band edge states become nearly purely frustrated p states, but also the band structure is qualitatively different from any known bulk elemental semiconductors. For example, the optical properties are similar to those of direct-gap semiconductors GaN and ZnO, whereas the effective masses are comparable to or smaller than those of Si.

  19. The metal-insulator transition in trivalent-ion-doped tungsten bronzes.

    PubMed

    Kasl, C; Hoch, M J R

    2014-02-12

    Electrical transport measurements have been made on a series of trivalent-ion-doped tungsten bronzes MxWO3, with M = Y (0.05 ≤ x ≤ 0.12) or La (0.05 ≤ x ≤ 0.19), over the temperature range 2-300 K. The results are consistent with a metal-insulator transition (MIT) at a critical concentration xC ≃ 0.06, which corresponds to an electron concentration nC ≃ 3.3 × 10(21) cm(-3). The appearance of small concentrations of non-cubic phases for x ∼ xC does not have a significant impact on the evolution of the electronic properties of the trivalent bronzes in the low x range. Analysis of the transport results, and a comparison of the findings with those obtained by other workers for the sodium tungsten bronzes, suggest that electron-electron interaction effects play a significant role in inducing the MIT in this type of disordered system.

  20. Metal-insulator transitions in LaTiO3 / CaTiO3 superlattices

    NASA Astrophysics Data System (ADS)

    Seo, Sung Seok A.; Lee, Ho Nyung

    2010-03-01

    Strongly correlated electrons at an interface of complex oxide heterostructures often show interesting behaviors that require an introduction of new physical concepts. For example, the metallic transport behavior found in the superlattices of a Mott insulator LaTiO3 and a band insulator SrTiO3 (STO) has established the concept of interfacial electronic reconstruction. In this work, we have studied the transport property of a new type of Mott/band insulator LaTiO3/CaTiO3 (LTO/CTO) superlattices grown by pulsed laser deposition (PLD). In order to rule out concerns about the PLD plume-triggered oxygen vacancies generated in STO substrates, which might influence transport measurement, and to investigate the effect of epitaxial strain, we have used insulating NdGaO3 substrates. While both LTO and CTO single films are highly insulating, we have observed intriguing metal-insulator transitions (MIT) in the LTO/CTO superlattices depending on the global LTO/CTO thickness ratio and temperature. (Note that LTO/STO superlattices are metallic at all temperatures (2-300 K)). In this talk, we will discuss the origin of the MIT in the scheme of self compensation mechanism of d-electrons at the hetero-interface between LTO and CTO.

  1. Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

    NASA Astrophysics Data System (ADS)

    Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

    2007-03-01

    We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

  2. Dynamics of the metal-insulator transition of donor-doped SrTi O3

    NASA Astrophysics Data System (ADS)

    Meyer, René; Zurhelle, Alexander F.; De Souza, Roger A.; Waser, Rainer; Gunkel, Felix

    2016-09-01

    The electrical properties of donor-doped SrTi O3 (n -STO) are profoundly affected by an oxidation-induced metal-insulator transition (MIT). Here we employ dynamical numerical simulations to examine the high-temperature MIT of n -STO over a large range of time and length scales. The simulations are based on the Nernst-Planck equations, the continuity equations, and the Poisson equation, in combination with surface lattice disorder equilibria serving as time-dependent boundary conditions. The simulations reveal that n -STO, upon oxidation, develops a kinetic space charge region (SCR) in the near-surface region. The surface concentrations of the variously mobile defects (electrons, Sr vacancies, and O vacancies) are found to vary over time and to differ considerably from the values of the new equilibrium. The formation of the SCR in which electrons are strongly depleted occurs within nanoseconds, i.e., it yields a fast MIT in the near-surface region during the oxidation process. As a result of charge (over-)compensation by Sr vacancies incorporated at the surface of n -STO, this SCR is much more pronounced than conventionally expected. In addition, we find an anomalous increase of O vacancy concentration at the surface upon oxidation caused by the SCR. Our simulations show that the SCR fades in the long term as a result of the slow in-diffusion of Sr vacancies. We discuss implications for the electrical conductivity of n -STO crystals used as substrates for epitaxial oxide thin films, of n -STO thin films and interfaces, and of polycrystalline n -STO with various functionalities.

  3. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-03-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.

  4. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    PubMed Central

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-01-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

  5. Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well.

    SciTech Connect

    Schaffler, F.; Muhlberger, M.; Lai, K. W.; Lyon, S.A.; Tsui, Daniel Chee; Pan, W. Y.

    2005-01-01

    The apparent metal-insulator transition is observed in a high-quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si{sub 1-x}Ge{sub x} heterostructure with mobility {mu} = 1.9 x 10{sup 5} cm{sup 2}/V s at density n = 1.45 x 10{sup 11} cm{sup -2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is -0.32 x 10{sup 11} cm{sup -2}, a very low value obtained in Si-based 2D systems. The in-plane magnetoresistivity {rho}(B{sub ip}) was measured in the density range, 0.35 x 10{sup 11} < n < 1.45 x 10{sup 11} cm{sup -2}, where the 2DES shows the metallic-like behavior. It first increases and then saturates to a finite value {rho}(B{sub c}) for B{sub ip}>B{sub c} , with B{sub c} the full spin-polarization field. Surprisingly, {rho}(B{sub c})/{rho}(0)-1.8 for all the densities, even down to n = 0.35 x 10{sup 11} cm{sup -2}, only 10% higher than n{sub c}. This is different from that in clean Si metal-oxide-semiconductor field-effect transistors, where the enhancement is strongly density dependent and {rho}(B{sub c})/{rho}(0) appears to diverge as n {yields} n{sub c}. Finally, we show that in the fully spin-polarized regime, dependent on the 2DES density, the temperature dependence of {rho}(B{sub ip}) can be either metallic-like or insulating.

  6. Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature

    NASA Astrophysics Data System (ADS)

    Ha, Sieu D.; Viswanath, B.; Ramanathan, Shriram

    2012-06-01

    We demonstrate that a metal-insulator phase transition can be electrothermally actuated in the correlated complex oxide SmNiO3 (SNO) above room temperature from current-voltage measurements on thin film two-terminal devices. We simulate the internal temperature of SmNiO3 as a function of applied dc power by a Joule heating mechanism with substrate/electrode dissipation and find good agreement with experiment and device scaling. The results are relevant towards integrating correlated oxide phase transition functionality into semiconductor electronic/optoelectronic platforms.

  7. Metal-insulator transitions and superconductivity in ditetramethyltetraselenafulvalenium flourosulfonate ((TMTSF)/sub 2/FSO/sub 3/)

    SciTech Connect

    Lacoe, R.C.; Wolf, S.A.; Chaikin, P.M.; Wudl, F.; Aharon-Shalom, E.

    1983-02-01

    We have investigated the phase diagram of the organic charge-transfer salt ditetramethyltetraselenafulvalenium flourosulfonate ((TMTSF)/sub 2/FSO/sub 3/) which contains an asymmetric dipolar anion. At low pressures there is a metal-insulator transition related to anion ordering. Between 5 and 6 kbar, there is a dipolar glass phase with increased resistivity. However, thermopower and superconducting measurements indicate that the Fermi surface remains ungapped. Above 5 kbar there is a superconducting transition with T/sub c/>2 K. This is the highest T/sub c/ for this family of compounds and suggests that the anions can enhance T/sub c/.

  8. Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

    2015-12-01

    The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal-insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal-insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal-insulator transitions, paving the pathway for developing functional field effect transistors.

  9. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-05-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

  10. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    PubMed Central

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  11. Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics.

    PubMed

    Wang, Le; Dash, Sibashisa; Chang, Lei; You, Lu; Feng, Yaqing; He, Xu; Jin, Kui-juan; Zhou, Yang; Ong, Hock Guan; Ren, Peng; Wang, Shiwei; Chen, Lang; Wang, Junling

    2016-04-20

    Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO₃ films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm³ due to the formation of strongly correlated Ni²⁺ t(2g)⁶e(g)² states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

  12. Magnetic and Metal-Insulator Transition in natural Transition Metal Sulfides

    NASA Astrophysics Data System (ADS)

    Wang, Renxiong; Metz, Tristin; Liu, I.-Lin; Wang, Kefeng; Wang, Xiangfeng; Jeffries, J. R.; Saha, S. R.; Greene, R. L.; Paglione, J.; Santelli, C. C.; Post, J.,

    In collaboration with the Smithsonian Institution's National Museum of Natural History, we present detailed studies of a class of natural minerals with potential to harbor correlated behavior. Transition metal sulfide minerals, such as Bornite (Cu5FeS4), are an important family of compounds known for their thermoelectric properties. We will present low temperature experimental studies of magnetic transitions and focus on a compound that exhibits a metal to insulator transition concident with entrance to an antiferromagnetic ground state, suggesting a potentially interesting system with promise for realizing new correlated states of matter in a naturally occurring mineral.

  13. Topological textures and metal-insulator transition in Reentrant Integer Quantum Hall Effect: role of disorder

    NASA Astrophysics Data System (ADS)

    Lyanda-Geller, Yuli; Simion, George

    2015-03-01

    We investigate a ground state of the two-dimensional (2D) electron liquid in the presence of disorder for Landau level filling factors, for which the re-entrant integer quantum Hall effect is observed. Our particular interest is the range of filling factors, which in a clean 2D system is favorable to formation of the two-electron (2e) bubble crystal. For the smooth random potential due to charged impurities placed far away from the 2D gas, the ground state is a lightly distorted 2e bubble crystal. However, for positively or negatively charged residual impurities located approximately within about three magnetic lengths from the 2D electrons, the ground state contains charged 2e complexes formed either by positively charged impurity and 3e defect bubble, or negatively charged impurity and 2e defect bubble. In the vicinity of 1e and 3e defect bubbles, the 2e bubbles of the crystal change their shape from round to elongated forming hedgehog (for 1e defect) or vortex (for 3e defect) textures. The topological textures due to these complexes interact with vortex and hedgehog excitations, generated as temperature increases that are not bound by residual impurities. The temperature of insulator to metal transition calculated with both bound and unbound defects agrees with experiment. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  14. Bond formation effects on the metal-insulator transition in the half-filled kagome Hubbard model

    NASA Astrophysics Data System (ADS)

    Higa, Ryota; Asano, Kenichi

    2016-06-01

    We study the metal-insulator transition in the half-filled Hubbard model on a Kagome lattice using the variational cluster approximation. The strong coupling limit of the model corresponds to the S =1 /2 Kagome Heisenberg antiferromagnet, which is known to have a singlet ground state, although its detail is still debated. As the results of the cluster methods generally depend much on the choice of the unit cluster, we have chosen the clusters that are compatible with these singlet ground states in the strong coupling case found so far, which basically consist of even number of sites. It is found that the correlated electrons on the Kagome lattice have a strong tendency to form valence-bond structures, which are the resonation of electrons on a single bond or several bonds forming loops. The zero-temperature metal-insulator transition at some interaction strength is possibly driven by the formation of such short range valence bonds and shows a second order character, which is distinctive from the Brinkman-Rice scenario. The electrons on these valence bonds further localizes onto each site as the interaction increases, and the valence bonds of electrons finally turn into magnetic singlet bonds between localized S =1 /2 spins, which are consistent with the ground states of the Kagome antiferromagnet.

  15. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3 Ru 2 O 7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Zhu, Z. H.; Bohnenbuck, B.; Chuang, Y.-D.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Elfimov, I. S.; Sawatzky, G. A.; Damascelli, A.

    2011-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr 3 (Ru 1-x Mn x)2 O7 , performed at both Ru and Mn L -edges. Resonant magnetic superstructure reflections together with ab-initio density functional theory calculations identify the ground state as a spin checkerboard with blocks of 4 spins up and 4 spins down. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x ~ 0.05 Mn substitution. Perhaps more important, our results suggest that the same checkerboard instability might be present already in the parent compound Sr 3 Ru 2 O7 . In collaboration with: A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley) I. Zegkinoglou, M.W. Haverkort (MPI) J. Geck, D.G. Hawthorn (UBC) R. Mathieu, Y. Tokura, S. Satow, H. Takagi (Tokyo) H.-H. Wu and C. Schussler-Langeheine (Cologne).

  16. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    PubMed Central

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  17. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    NASA Astrophysics Data System (ADS)

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.

  18. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation.

    PubMed

    Yamin, Tony; Strelniker, Yakov M; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  19. Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

    NASA Astrophysics Data System (ADS)

    Ang, R.; Miyata, Y.; Ieki, E.; Nakayama, K.; Sato, T.; Liu, Y.; Lu, W. J.; Sun, Y. P.; Takahashi, T.

    2013-09-01

    We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.

  20. Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

    NASA Astrophysics Data System (ADS)

    Liao, G. M.; Chen, S.; Fan, L. L.; Chen, Y. L.; Wang, X. Q.; Ren, H.; Zhang, Z. M.; Zou, C. W.

    2016-04-01

    Insulator to metal phase transitions driven by external electric field are one of the hottest topics in correlated oxide study. While this electric triggered phenomena always mixes the electric field switching effect and joule thermal effect together, which are difficult to clarify the intrinsic mechanism. In this paper, we investigate the dynamical process of voltage-triggered metal-insulator transition (MIT) in a VO2 crystal film and observe the temperature dependence of the threshold voltages and switching delay times, which can be explained quite well based on a straightforward joule thermal model. By conducting the voltage controlled infrared transmittance measurement, the delayed infrared transmission change is also observed, further confirming the homogeneous switching process for a large-size film. All of these results show strong evidences that joule thermal effect plays a dominated role in electric-field-induced switching of VO2 crystal.

  1. Covalency, Excitons, Double Counting and the Metal-Insulator Transition in Transition Metal Oxides

    NASA Astrophysics Data System (ADS)

    Wang, Xin

    2012-02-01

    We present single-site dynamical mean-field studies of realistic models of transition metal oxides, including the cuprate superconductors and rare earth nickelates (in bulk and superlattice form). We include orbital multiplet effects and hybridization to ligands. We explicitly calculate the d-d exciton spectra for cuprates, finding sharp exciton lines in both metallic and insulating phases, which should be visible in experiments. We also find that the additional d3z^2-r^2 orbital does not contribute to an additional Fermi surface at any reasonable doping, in contradiction to previous slave-boson studies. The hybridization to ligands is shown to have crucial effects, for example suppressing the ferro-orbital order previously found in Hubbard model studies of nickelates. Hybridization to ligands is shown to be most naturally parametrized by the d-orbital occupancy. For cuprates and nickelates, insulating behavior is found to be present only for a very narrow range of d-occupancy, irrespective of the Coulomb repulsion. The d-occupancy predicted by standard band calculations is found to be very far from the values required to obtain an insulating phase, calling into question the interpretation of these materials as charge transfer insulators. [4pt] This work is done in collaboration with A.J. Millis, M.J. Han, C.A. Marianetti, L. de' Medici, and H.T. Dang, and is supported by NSF-DMR-1006282, the Army Office of Scientific Research, and the Condensed Matter Theory Center and CNAM at University of Maryland. [4pt] [1] X. Wang, H. T. Dang, and A. J. Millis, Phys. Rev. B 84, 014530 (2011).[0pt] [2] X. Wang, M. J. Han, L. de' Medici, C. A. Marianetti, and A. J. Millis, arXiv:1110.2782.[0pt] [3] M. J. Han, X. Wang, C. A. Marianetti, and A. J. Millis, Phys. Rev. Lett. 107, 206804 (2011).

  2. Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films

    NASA Astrophysics Data System (ADS)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2016-05-01

    The metal-insulator switching characteristics of VO2 play a crucial role in the performances of VO2-based devices. In this paper we study high-quality (010)-oriented epitaxial films grown on (001) sapphire substrates by means of electron-beam evaporation and investigate the role of interface defects and thermal strain on the parallel evolution of the metal-insulator transition (MIT) and structural phase transition (SPT) between the monoclinic (insulator) and rutile (metal) phases. It is demonstrated that the highly-mismatched VO2/Al2O3 interface promotes a domain-matching epitaxial growth process where the film grows in a strain-relaxed state and the lattice distortions are confined at the interface in regions with limited spatial extent. Upon cooling down from the growth temperature, tensile strain is stored in the films as a consequence of the thermal expansion mismatch between VO2 and Al2O3 . The thinnest films exhibit the highest level of tensile strain in the interfacial plane resulting in a shift of both the MIT and the SPT temperatures towards higher values, pointing to a stabilization of the monoclinic/insulating phase. Concomitantly, the electrical switching characteristics are altered (lower resistivity ratio and broader transition) as a result of the presence of structural defects located at the interface. The SPT exhibits a similar evolution with, additionally, a broader hysteresis due to the formation of an intermediate, strain-stabilized phase in the M1-R transition. Films with thickness ranging between 100-300 nm undergo a partial strain relaxation and exhibit the best performances, with a sharp (10°C temperature range) and narrow (hysteresis <4°C) MIT extending over more than four orders of magnitude in resistivity (6 ×104 ).

  3. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model. PMID:27136956

  4. Metal-insulator transition in SrTiO(3-x) thin films induced by frozen-out carriers.

    PubMed

    Liu, Z Q; Leusink, D P; Wang, X; Lü, W M; Gopinadhan, K; Annadi, A; Zhao, Y L; Huang, X H; Zeng, S W; Huang, Z; Srivastava, A; Dhar, S; Venkatesan, T; Ariando

    2011-09-30

    We report optical, electrical and magnetotransport properties of oxygen deficient SrTiO(3) (SrTiO(3-x)) thin films fabricated by pulsed laser deposition technique. The oxygen vacancies (O(vac)) in the thin film are expected to be uniform. By comparing its electrical properties to those of bulk SrTiO(3-x), it was found that O(vac) in bulk SrTiO(3-x) is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the SrTiO(3-x) film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be reexcited by Joule heating, electric and intriguingly magnetic field. PMID:22112172

  5. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.

  6. Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via Dirac gap.

    PubMed

    Bansal, Namrata; Cho, Myung Rae; Brahlek, Matthew; Koirala, Nikesh; Horibe, Yoichi; Chen, Jing; Wu, Weida; Park, Yun Daniel; Oh, Seongshik

    2014-03-12

    Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only microsized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity.

  7. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

    SciTech Connect

    Stone, P.R.; Alberi, K.; Tardif, S.K.Z.; Beeman, J.W.; Yu, K.M.; Walukiewicz, W.; Dubon, O.D.

    2008-02-07

    We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4percent of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 percent As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 percent P (1percent N) into the As sublattice.

  8. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film

    NASA Astrophysics Data System (ADS)

    Fan, L. L.; Chen, S.; Liao, G. M.; Chen, Y. L.; Ren, H.; Zou, C. W.

    2016-06-01

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

  9. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

    PubMed

    Fan, L L; Chen, S; Liao, G M; Chen, Y L; Ren, H; Zou, C W

    2016-06-29

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

  10. Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

    NASA Astrophysics Data System (ADS)

    Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

    Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

  11. Switching adhesion forces by crossing the metal-insulator transition in Magnéli-type vanadium oxide crystals.

    PubMed

    Stegemann, Bert; Klemm, Matthias; Horn, Siegfried; Woydt, Mathias

    2011-01-01

    Magnéli-type vanadium oxides form the homologous series V(n)O(2) (n) (-1) and exhibit a temperature-induced, reversible metal-insulator first order phase transition (MIT). We studied the change of the adhesion force across the transition temperature between the cleavage planes of various vanadium oxide Magnéli phases (n = 3 … 7) and spherical titanium atomic force microscope (AFM) tips by systematic force-distance measurements with a variable-temperature AFM under ultrahigh vacuum conditions (UHV). The results show, for all investigated samples, that crossing the transition temperatures leads to a distinct change of the adhesion force. Low adhesion corresponds consistently to the metallic state. Accordingly, the ability to modify the electronic structure of the vanadium Magnéli phases while maintaining composition, stoichiometry and crystallographic integrity, allows for relating frictional and electronic material properties at the nano scale. This behavior makes the vanadium Magnéli phases interesting candidates for technology, e.g., as intelligent devices or coatings where switching of adhesion or friction is desired.

  12. Linear-in-temperature resistivity close to a topological metal insulator transition in ultra-multi valley fcc-ytterbium

    NASA Astrophysics Data System (ADS)

    Enderlein, Carsten; Fontes, Magda; Baggio-Saitovich, Elisa; Continentino, Mucio A.

    2016-01-01

    The semimetal-to-semiconductor transition in fcc-Yb under modest pressure can be considered a picture book example of a metal-insulator transition of the Lifshitz type. We have performed transport measurements at low temperatures in the closest vicinity of the transition and related DFT calculations of the Fermi surface. Our resistivity measurements show a linear temperature dependence with an unusually low dρ / dT at low temperatures approaching the MIT. The calculations suggest fcc-ytterbium being an ultra-multi valley system with 24 electron and 6 hole pockets in the Brillouin zone. Such Fermi surface topology naturally supports the appearance of strongly correlated phases. An estimation of the quasiparticle-enhanced effective mass shows that the scattering rate is by at least two orders of magnitude lower than in other materials which exhibit linear-in-T behavior at a quantum critical point. However, we cannot exclude an excessive effective mass enhancement, when the van Hove singularity touches the Fermi level.

  13. Giant oxygen isotope effect on the metal-insulator transition of RNiO{sub 3} perovskites

    SciTech Connect

    Medarde, M.; Fauth, F.; Furrer, A.; Lacorre, P.; Conder, K.

    1998-08-01

    The metal to insulator transition displayed by all the members of the perovskite family RNiO{sub 3} (R = 4f rare earth different from La) has attracted a lot of interest since it constitutes one of the few examples of this phenomenon in perfectly stoichiometric compounds. In spite of the great deal of work performed during the last six years, the mechanism responsible for the electronic localization is still a matter of controversy. The observation of unusually large O isotope shifts on the metal-insulator temperature T{sub MI} reported in this study represents an important advance since it clearly proves the dominant role of the electron lattice interaction as driving force for the transition. Moreover, the good agreement between this observation and a simple model based on the existence of Jahn-Teller polarons in the metallic state gives further qualitative and quantitative support to the polaronic picture recently suggested to account for O isotope effects in other 3d transition metal oxides containing Jahn-Teller ions.

  14. Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2012-10-01

    We report here the strain dependent structural and electrical transport properties of epitaxial NdNiO{sub 3} thin films. Pulsed laser deposition technique was used to grow the NdNiO{sub 3} thin films on c-axis oriented SrTiO{sub 3} single crystals. Deposited films were irradiated using 200 MeV Ag{sup 15+} ion beam at the varying fluence (1 Multiplication-Sign 10{sup 11}, 5 Multiplication-Sign 10{sup 11}, and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2}). X-ray diffraction studies confirm the epitaxial growth of the deposited films, which is maintained even up to the highest fluence. Rise in the in-plane compressive strain has been observed after the irradiation. All the films exhibit metal-insulator transition, however, a systematic decrease in the transition temperature (T{sub MI}) has been observed after irradiation, which may be attributed to the increase in the in-plane compression. Raman spectroscopy data reveal that this reduction in T{sub MI}, with the irradiation, is related to the decrease in band gap due to the stress generated by the in-plane compressive strain.

  15. Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device

    NASA Astrophysics Data System (ADS)

    Khan, Abdul Karim; Lee, Byoung Hun

    2016-09-01

    Memcapacitor model based on its one possible physical realization is developed and simulated in order to know its limitation before making a real device. The proposed device structure consists of vertically stacked dielectric layer and MoS2 monolayer between two external metal plates. The Metal Insulator Transition (MIT) phenomenon of MoS2 monolayer is represented in terms of percolation probabilty which is used as the system state. Cluster based site percolation theory is used to mimic the MIT of MoS2 which shows slight discontinuous change in MoS2 monolayer conductivity. The metal to insulator transition switches the capacitance of the device in hysterical way. An Ioffe Regel criterion is used to determine the MIT state of MoS2 monolayer. A good control of MIT time in the range of psec is also achieved by changing a single parameter in the model. The model shows memcapacitive behavior with an edge of fast switching (in psec range) over the previous general models. The model is then extended into vertical cascaded version which behaves like a ternary device instead of binary.

  16. Metal-insulator transition in Nd1-xEuxNiO3: Entropy change and electronic delocalization

    NASA Astrophysics Data System (ADS)

    Jardim, R. F.; Barbeta, V. B.; Andrade, S.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-01

    The metal-insulator (MI) phase transition in Nd1-xEuxNiO3, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat CP(T). The MI transition temperature (TMI) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dTMI/dP were found: (i) for x ≤ 0.15, dTMI/dP is nearly constant and ˜-4.3 K/kbar; (ii) for x ≥ 0.15, dTMI/dP increases with x and it seems to reach a saturation value ˜-6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of TMI. The entropy change (ΔS) at TMI for the sample x = 0, estimated by using the dTMI/dP data and the Clausius-Clapeyron equation, resulted in ΔS ˜ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔSM ˜ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and CP(T) data indicates that the entropy change at TMI is mainly due to the electronic delocalization and not related to the AF transition.

  17. Studies related to the magnetic-field-induced metal-insulator transition in n-type InSb

    NASA Astrophysics Data System (ADS)

    Abdul-Gader, Mousa Mohammad

    Measurements of the longitudinal and transverse resistivities of several n-type InSb samples with carrier densities in the range 2 to 7 x 10 cm-3 have been made as a function (a) of temperature ([greater or equal to] 0.04K) at constant magnetic field and (b) of magnetic field ( [less or equal to] 70KG) at constant temperature. A metal-insulator (MI) transition has been found to occur in the sample under study at a certain magnetic field Hc, dependent on the carrier concentration n. On the metallic side of this magnetically induced has been used to interpret the magnetic-field variation of the observed conductivity at very low temperatures. Good agreement is obtained in the vicinity of the transition with the critical exponent v ranging between 0.8 and nearly metallic region of the transition the temperature dependence of the conductivity obeys the relation ?(T) = qq+ mT + BT for T [lesser or equal to]1.5K. When the magnetic field is reduced sufficiently so that the sample becomes like a metal but still remaining in the extreme quantum limit, the resistivity becomes independent of temperature and agrees with the magnetoresistance theory of Roth and Argyres (1966) with the screening radius given by Wallace (1974a and b). In the insulator region of the transition, the low-temperature dependence of the resistivity is represented by [rho] = [rho]0exp (T0/T)x predicted for variable range hopping ° conduction, but no common value of x has been observed and it was in the range 1/4 to 1/2. For any temperature dependence in this regime, To is found to increase with increasing magnetic field and the discrepancy between the experimental and theoretical values of To is attributed to correlation effects.

  18. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  19. Variation of optical conductivity spectra in the course of bandwidth-controlled metal-insulator transitions in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, K.; Fujioka, J.; Tokura, Y.

    2016-06-01

    We spectroscopically investigate a series of pyrochlore iridates R2Ir2O7 (R : rare-earth and Y ions) where the metal-insulator transitions are induced by systematic bandwidth control via chemical substitutions of R ions. We establish the phase diagram of R2Ir2O7 , as endorsed by the variation of the optical conductivity spectra, in which the competing phases including paramagnetic insulator (PI), paramagnetic metal (PM), and antiferromagnetic insulator (AFI) show up as a function of bandwidth and temperature. For small R -ionic radius (R = Y-Sm), i.e., strongly correlated region, pronounced peaks on the edge of the optical gap are discerned below the magnetic transition temperature TN, which is attributable to exciton and magnon sideband absorptions. It turns out that the estimated nearest-neighbor exchange interaction increases as R -ionic radius increases, whereas TN monotonically decreases, indicating that the all-in all-out magnetic order arises from the interplay among several exchange interactions inherent to extended 5 d orbitals on the frustrated lattice. For larger R -ionic radius (R = Sm-Pr), i.e., relatively weakly correlated region, the optical conductivity spectra markedly change below 0.3 eV in the course of PM-AFI transition, implying that the magnetic order induces the insulating state. In particular, we have found distinct electrodynamics in the composition of R =Nd0.5Pr0.5 which is located on the boundary of the quantum PM-AFI transition, pointing to the possible emergence of unconventional topological electronic phases related possibly to the correlated Weyl electrons.

  20. Growth temperature-dependent metal-insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

    NASA Astrophysics Data System (ADS)

    Wang, Liangxin; Yang, Yuanjun; Zhao, Jiangtao; Hong, Bin; Hu, Kai; Peng, Jinlan; Zhang, Haibin; Wen, Xiaolei; Luo, Zhenlin; Li, Xiaoguang; Gao, Chen

    2016-04-01

    Vanadium dioxide (VO2) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO3) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal-insulator transition (MIT) behavior of the VO2 epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 102 to 104 with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thus larger grain size in the (010)-VO2/(111)-SrTiO3 epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO2 films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO2 epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO2 films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO2 can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.

  1. Electric field induced metal-insulator transition and colossal magnetoresistance in CdCr2S4

    NASA Astrophysics Data System (ADS)

    Sun, C. P.; Lin, C. C.; Her, J. L.; Taran, S.; Chou, C. C.; Chan, C. L.; Huang, C. L.; Berger, H.; Yang, H. D.

    2008-03-01

    Multiferroic ordering existing in a single material is a recent hot topic in the field of condensed matter physics due to its potential application in device control. The chromium chalcogenide spinel CdCr2S4 is one of the attractive materials investigated by Hemberger et al. recently.[1] Based on the electrical measurement, there is no discontinuity through the ferromagnetic ordering at TC ˜ 85K.[2] We measure the temperature dependent resistance under various electric fields to investigate the electrical properties of the present material. To our knowledge, we first observe the electric field induced metal-insulator transition in this material around TC. Moreover, a colossal magnetoresistance (CMR), which is comparable to that of manganese-based CMR material, is also observed near TC. The origin for these properties is discussed. [1] J. Hemberger, P. Lunkenheimer, R. Fichtl, H.-A. Krug von Nidda, V. Tsurkan, A. Loidl, Nature 434, 364 (2006). [2] P. K. Baltzer, H. W. Lehmann, and M. Robbins, Phys. Rev. Lett. 15, 493 (1965).

  2. Magnetic and transport properties of amorphous GdxGe1-x alloys near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Helgren, E.; Hellman, F.; Zeng, Li; Sinenian, N.; Islam, R.; Smith, David J.

    2007-11-01

    The temperature and field dependence of magnetization and conductivity of amorphous Ge doped with Gd (a-GdxGe1-x) has been measured for a wide range of x (0.08metal-insulator transition. Magnetization and magnetic susceptibility measurements show strong magnetic interactions and a low temperature spin-glass freezing. High field magnetization and susceptibility per Gd atom in the paramagnetic state are significantly suppressed below that of noninteracting Gd, as observed previously for a-Gd-Si alloys. However, unlike a-Gd-Si , the low field susceptibility does not fit a Curie-Weiss law and shows no significant dependence on composition. Conductivity measurements show that Gd causes localization of charge carriers below a characteristic temperature T* , which also marks the onset of significant negative magnetoresistance. Both T* and the magnitude of the MR are significantly lower in a-Gd-Ge than in comparable a-Gd-Si alloys. It is proposed that the large effects of the host matrix (Ge vs Si) are due to differences in both the band gap and dielectric constant, which cause changes in screening, thereby altering the effect of Gd magnetic moments on the localization of carriers and on the indirect mediated Gd-Gd exchange interactions.

  3. Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  4. Competing exchange interactions on the verge of a metal-insulator transition in the two-dimensional spiral magnet Sr3Fe2O7.

    PubMed

    Kim, J-H; Jain, Anil; Reehuis, M; Khaliullin, G; Peets, D C; Ulrich, C; Park, J T; Faulhaber, E; Hoser, A; Walker, H C; Adroja, D T; Walters, A C; Inosov, D S; Maljuk, A; Keimer, B

    2014-10-01

    We report a neutron scattering study of the magnetic order and dynamics of the bilayer perovskite Sr(3)Fe(2)O(7), which exhibits a temperature-driven metal-insulator transition at 340 K. We show that the Fe(4+) moments adopt incommensurate spiral order below T(N) = 115 K and provide a comprehensive description of the corresponding spin-wave excitations. The observed magnetic order and excitation spectra can be well understood in terms of an effective spin Hamiltonian with interactions ranging up to third-nearest-neighbor pairs. The results indicate that the helical magnetism in Sr(3)Fe(2)O(7) results from competition between ferromagnetic double-exchange and antiferromagnetic superexchange interactions whose strengths become comparable near the metal-insulator transition. They thus confirm a decades-old theoretical prediction and provide a firm experimental basis for models of magnetic correlations in strongly correlated metals. PMID:25325658

  5. Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

    NASA Astrophysics Data System (ADS)

    Hooda, M. K.; Yadav, C. S.

    2016-06-01

    We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m*~8me) in the metallic state indicates the narrow character of the 3d band. The electric conduction at low temperatures (T=2-20 K) is governed by the variable range hopping of the charge carriers.

  6. Disappearance of metal-insulator transition in NdNiO3/LaAlO3 films by ion irradiation controlled stress

    NASA Astrophysics Data System (ADS)

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2016-09-01

    The effect of strain on the metal-insulator transition (MIT) of the epitaxial NdNiO3 film on the c-axis oriented LaAlO3 single crystal, grown by pulsed laser deposition, has been investigated. Swift heavy ion irradiation was used to vary the strain state of the deposited film. X-ray diffraction confirmed a systematic fluence dependent rise in the in-plane compressive strain, while maintaining the epitaxy of the film. This in-plane compressive strain has been found to reduce the MIT temperature, which finally disappeared for the highest fluence of the irradiation. This is also corroborated with the Raman spectroscopy measurements which suggest that the ion irradiation induced stress is responsible for the suppression of the metal-insulator transition.

  7. Compositionally controlled metal-insulator transition in Tl{sub 2-x}In{sub x}TeO{sub 6}

    SciTech Connect

    Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

    2011-04-15

    Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} are both known to crystallize in the Na{sub 2}SiF{sub 6}-type structure. We find Tl{sub 2}TeO{sub 6} is metallic, whereas In{sub 2}TeO{sub 6} is an insulator. We have prepared a complete Tl{sub 2-x}In{sub x}TeO{sub 6} series in a search for a compositionally controlled metal-insulator transition that might be expected if a complete solid solution can be obtained. Unit cell edges and volume vary monotonically with no indication of a miscibility gap. The metal-insulator transition occurs at an x value of about 1.4, which can be rationalized on a percolation model. No superconductivity could be detected down to 5 K. -- Graphical abstract: A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5. No superconductivity could be detected down to 5 K. Display Omitted Research highlights: {yields} A complete solid solution between Tl{sub 2}TeO{sub 6} and In{sub 2}TeO{sub 6} is formed. {yields} A compositionally controlled metal-insulator transition occurs in Tl{sub 2-x}In{sub x}TeO{sub 6} at an x value of about 1.5, which can be rationalized on a percolation model. {yields} No superconductivity could be detected down to 5 K.

  8. Metal-Insulator Transition in VO_{2}: A DFT+DMFT Perspective.

    PubMed

    Brito, W H; Aguiar, M C O; Haule, K; Kotliar, G

    2016-07-29

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M_{1} and M_{2} monoclinic (insulating) phases of VO_{2} employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO_{2}, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO_{2}: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M_{2} phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M_{1} phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M_{1} phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments. PMID:27517782

  9. Metal-Insulator Transition in VO2 : A DFT +DMFT Perspective

    NASA Astrophysics Data System (ADS)

    Brito, W. H.; Aguiar, M. C. O.; Haule, K.; Kotliar, G.

    2016-07-01

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M1 and M2 monoclinic (insulating) phases of VO2 employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO2 , and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO2 : undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M2 phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M1 phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M1 phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.

  10. Plasmonic effects on the laser-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; MacQuarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconducting to metallic phase transition that can be induced thermally, optically, or electrically. When switched to the high-temperature (T > 68°C) metallic phase, the greatest contrast in the optical properties occurs at wavelengths in the near-to-mid-infrared and beyond. In the visible to near-infrared, however, upon switching for wavelengths between ~500-1000 nm, VO2 transmits more light in the metallic phase. In this paper, we report studies of the effect of near-IR irradiation (785 nm) on lithographically prepared arrays of gold nanoparticles (NPs) covered with a thin film of VO2 and find that the presence of the NPs substantially lowers the laser threshold for low-power induction of the phase transition. Hybrid Au::VO2 structures were created by coating lithographically prepared arrays of gold nanoparticles (NPs) (diameters 140 and 200 nm, array spacing 450 nm) with 60 nm thick films of VO2 by pulsed laser deposition. Due to resonant absorption of the Au particle-plasmon resonance (PPR) at 785 nm, a temperature-dependent shift in the PPR can be generated by switching the VO2 from one phase to another. We have measured the switching behavior of VO2 and Au::VO2 structures using shuttered CW laser irradiation in order to study both optical and thermal mechanisms of the phase transition. Transient absorption measurements using a shuttered 785 nm pump laser corresponding to the PPR resonance of the Au NPs and 1550 nm CW probe show that the presence of the Au NPs lowers the threshold laser power required to induce the phase transition.

  11. Universal role of quantum uncertainty in Anderson metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Cheng, W. W.; Zhang, Z. J.; Gong, L. Y.; Zhao, S. M.

    2016-07-01

    We explore quantum uncertainty, based on Wigner-Yanase skew information, in various one-dimensional single-electron wave functions. For the power-law function and eigenfunctions in the Aubry-André model, the electronic localization properties are well-defined. For them, we find that quantum uncertainty is relatively small and large for delocalized and localized states, respectively. And around the transition points, the first-order derivative of the quantum uncertainty exhibits singular behavior. All these characters can be used as signatures of the transition from a delocalized phase to a localized one. With this criterion, we also study the quantum uncertainty in one-dimensional disorder system with long-range correlated potential. The results show that the first-order derivative of spectrum-averaged quantum uncertainty is minimal at a certain correlation exponent αm for a finite system, and has perfect finite-size scaling behaviors around αm. By extrapolating αm, the threshold value αc ≃ 1.56 ± 0.02 is obtained for the infinite system. Thus we give another perspective and propose a consistent interpretation for the discrepancies about localization property in the long-range correlated potential model. These results suggest that the quantum uncertainty can provide us with a new physical intuition to the localization transition in these models.

  12. Disproportionation, Metal-Insulator Transition, and Critical Interaction Strength in Na1/2CoO2

    NASA Astrophysics Data System (ADS)

    Kunes, Jan

    2006-03-01

    Spontaneous breaking of symmetry is one of the key concepts of solid state physics related to phase transitions. Charge/spin density wave, or charge/spin ordering if the propagation vector is commensurate, are notorious examples of broken symmetry. The charge disproportionation in Na0.5CoO2 is the main theme of the present work. The results of LDA+U calculations will be presented, exhibiting a charge disproportionation transition at U 3eV. NaxCoO2 attracted considerable attention mainly due to superconductivity of its hydrated form Na0.3CoO2.1.3H2O [1]. Besides the superconductivity NaxCoO2 exhibits several intriguing properties throughout its phase diagram, such crossover from Pauli-like to Curie-Weiss susceptibility at x=0.5, spin-density wave around x=0.7 or several phase transitions for x=0.5 including metal-insulator transition, charge ordering and magnetic ordering [2]. The NaxCoO2 lattice consists of triangular CoO2 layers separated by Na layer. The mobility of Na ions and fractional occupation of Na sublattice provides an additional complication. Using LDA+U functional within FPLO [3] bandstructure method we have performed series of supercell calculations allowing for breaking of the symmetry between different Co sites. We have found that for large enough, but physically realistic, values of the on-site Coulomb interaction U the Co sublattice disproportionates into sites with formal valencies Co^4+ and Co^3+. We have found that at the same time a gap opens in the excitation spectrum. Details of the bandstructure across the transition as well as the driving forces of the transition in the LDA+U mean field picture will be discussed. [1] K. Takada et al., Nature (London) 422, 53 (2003).[2] M. L. Foo et al., Phys. Rev. Lett. 92, 247001 (2004).[3] K. Koepernik and H. Eschrig, Phys. Rev. B 59, 1743 (1999).

  13. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    NASA Astrophysics Data System (ADS)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  14. Optically induced metal-insulator transition in gold::vanadium dioxide hybrid structures

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Kaye, Anthony; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semi-conducting to metallic phase transition that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameters up to 200 nm with 60 nm thick films of VO2 via pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a chopped 780 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Additionally, pump-probe measurements were conducted on the structures using a Ti:sapphire oscillator with 100-fs pulses. Results show that the presence of Au NPs lowers the threshold laser power required to induce the phase transition. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  15. Structurally-driven metal-insulator transition in Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} (0{<=}x<0.14): A single crystal X-ray diffraction study

    SciTech Connect

    Qi, T.F.; Ge, M.; Korneta, O.B.; Parkin, S.; De Long, L.E.; Cao, G.

    2011-04-15

    Correlation between structure and transport properties are investigated in high-quality single-crystals of Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} with 0metal-insulator (MI) transition at 357 K. Upon chromium doping on the ruthenium site, the metal-insulator transition temperature (T{sub MI}) was drastically reduced, and is related to the competition between structural changes that occur upon Cr doping and with decreasing temperature. A strong suppression of structural distortions with increasing Cr substitution was identified. No clear T{sub MI} can be observed when x>13.5% and the system behaves as an insulator. Such a large, sharp metal-insulator transition and tuneable transition temperature may have potential applications in electronic devices. -- Graphical abstract: The metal-insulator transition temperature (T{sub MI}) was drastically reduced by Cr doping, and is closely related to the distortion of structure. Display Omitted Research highlights: {yields} The metal-insulator transition temperature (T{sub MI}) was drastically reduced by doping Cr into Ca{sub 2}RuO{sub 4} single crystal. {yields} Detailed single crystal structural analysis provided important insight into this structurally-driven metal-insulator transition. {yields} Negative Volume Thermal Expansion (NVTE) was observed with increasing temperature.

  16. Metal-insulator transitions in two dimensions at zero magnetic field in a p-type gallium arsenide heterostructure

    NASA Astrophysics Data System (ADS)

    Dultz, Shane Cole

    Presented in this work is a comparative study of two different two dimensional systems in GaAs heterostructures. In the two dimensional hole system, electron-electron interactions are strong and possibly the reason for an anomolous temperature dependence in the resistivity that is reminiscent of metallic behavior which is known not to exist in a non-interacting two dimensional Fermi gas. The other system is an electron system where interactions are much weaker and whose properties have been understood in the context of Fermi liquid theory. In the first set of experiments, the delocalized states of the two dimensional hole system in a p-type GaAs heterostructure are tracked in density-magnetic field parameter space to find qualitatively very different behavior from what is found in the weakly interacting electron system. The lowest delocalized state which corresponds to the lowest Landau level in high magnetic fields, is found to float up in energy as the magnetic field is reduced to zero for the electron system. We found that there is an absence of this floating for the hole system and discuss this in the context of the recently discovered metal-insulator transition at B = 0. We further investigate the high temperature properties of the hole system by analyzing the resistivity to temperatures as high as 120 K to see how well the strongly interacting hole system fits what is expected from acoustic and optical phonon scattering. This is done over a wide range of densities and temperatures so that we could understand what sort of temperature dependence is truly considered anomolous in low temperatures. Finally, the compressibility of both systems is studied. An unequivocal signature for a phase transition is found in the compressibility measurements for the hole system with a temperature independent crossing point in the resistance of the gas occurring at the minimum of the inverse compressibility signal as a function of density (disorder). Differences in the way the

  17. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    PubMed

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-01

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). PMID:26588400

  18. Tuning near field radiative heat flux through surface excitations with a metal insulator transition.

    PubMed

    van Zwol, P J; Ranno, L; Chevrier, J

    2012-06-01

    The control of heat flow is a formidable challenge due to lack of good thermal insulators. Promising new opportunities for heat flow control were recently theoretically discovered for radiative heat flow in near field, where large heat flow contrasts may be achieved by tuning electronic excitations on surfaces. Here we show experimentally that the phase transition of VO2 entails a change of surface polariton states that significantly affects radiative heat transfer in near field. In all cases the Derjaguin approximation correctly predicted radiative heat transfer in near field, but it underestimated the far field limit. Our results indicate that heat flow contrasts can be realized in near field that can be larger than those obtained in far field. PMID:23003960

  19. Confocal Raman microscopy across the metal-insulator transition of single vanadium dioxide nanoparticles.

    PubMed

    Donev, Eugenii U; Lopez, Rene; Feldman, Leonard C; Haglund, Richard F

    2009-02-01

    We present the first Raman scattering measurements on nanoparticulate vanadium dioxide (VO(2)), as well as the first observations of the temperature-induced phase transition in individual VO(2) nanoparticles (NPs). We compare the Raman response of two VO(2) NPs and a companion VO(2) film undergoing their monoclinic-tetragonal-monoclinic transformations and offer qualitative explanations for the large observed differences in hysteresis width. While bulk crystals and contiguous films contain numerous nucleation sites, individual NPs likely harbor only a few, which may make it possible to correlate detectable defects (e.g., grain boundaries and dislocations) with the "ease" of switching phases, as quantified by the width of the thermal hysteresis.

  20. Magnetic-field-induced superconductor-metal-insulator transitions in bismuth metal graphite

    NASA Astrophysics Data System (ADS)

    Suzuki, Masatsugu; Suzuki, Itsuko S.; Lee, Robert; Walter, Jürgen

    2002-07-01

    Bismuth metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated between adjacent sheets of nanographites. The superconductivity below Tc (=2.48 K) is due to Bi nanoparticles. The Curie-like susceptibility below 30 K is due to conduction electrons localized near zigzag edges of nanographites. A magnetic-field-induced transition from metallic to semiconductorlike phase is observed in the in-plane resistivity ρa around Hc (~25 kOe) for both H⊥c and H||c (c: c axis). A negative magnetoresistance in ρa for H⊥c (040 kOe) suggest the occurrence of a two-dimensional weak-localization effect.

  1. Volume-based considerations for the metal-insulator transition of CMR oxides

    SciTech Connect

    Neumeier, J.J. |; Hundley, M.F.; Cornelius, A.L.; Andres, K.

    1998-03-01

    The sensitivity of {rho} [electrical resistivity] to changes in volume which occur through: (1) applied pressure, (2) variations in temperature, and (3) phase transitions, is evaluated for some selected CMR oxides. It is argued that the changes in volume associated with phase changes are large enough to produce self pressures in the range of 0.18 to 0.45 GPa. The extreme sensitivity of the electrical resistivity to pressure indicates that these self pressures are responsible for large features in the electrical resistivity and are an important component for occurrence the metallicity below {Tc}. It is suggested that this is related to a strong volume dependence of the electron phonon coupling in the CMR oxides.

  2. Exotic topological states near a quantum metal-insulator transition in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming

    Pyrochlore iridates have attracted great interest as prime candidates that may host topologically nontrivial states, spin ice ordering and quantum spin liquid states, in particular through the interplay between different degrees of freedom, such as local moments and mobile electrons. Based on our extensive study using our high quality single crystals, we will discuss such examples, i.e. chiral spin liquid in a quadratic band touching state, Weyl semimetallic state and chiral domain wall transport nearby a quantum insulator-semimetal transition in pyrochlore iridates. This work is based on the collaboration with Nakatsuji Satoru, Kohama Yoshimitsu, Tomita Takahiro, Kindo Koichi, Jun J. Ishikawa, Balents Leon, Ishizuka Hiroaki, Timothy H. Hsieh. ZM. Tian was supported by JSPS Postdoctoral Fellowship (No.P1402).

  3. Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates

    NASA Astrophysics Data System (ADS)

    Yamasaki, A.; Fujiwara, H.; Tachibana, S.; Iwasaki, D.; Higashino, Y.; Yoshimi, C.; Nakagawa, K.; Nakatani, Y.; Yamagami, K.; Aratani, H.; Kirilmaz, O.; Sing, M.; Claessen, R.; Watanabe, H.; Shirakawa, T.; Yunoki, S.; Naitoh, A.; Takase, K.; Matsuno, J.; Takagi, H.; Sekiyama, A.; Saitoh, Y.

    2016-09-01

    In this study, we systematically investigate three-dimensional (3D) momentum (ℏ k )-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Srn +1IrnO3 n +1 using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO2-plane structure. This transition occurs when the spin-orbit-coupled jeff=1 /2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the Γ (0,0,0)-R (π ,π ,π ) direction is found to play a crucial role in the metallic characteristics of SrIrO3. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO3 and kz-dependent oscillations of photoelectron intensity in Sr3Ir2O7 . In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the k -resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed k -space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a nonrealistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.

  4. Ferromagnetic-nonmagnetic and metal-insulator phase transitions at the interfaces of KTaO{sub 3} and PbTiO{sub 3}

    SciTech Connect

    Yang, Yi; Chen, Jin-Feng; Hu, Lei; Lin, Chen-Sheng; Cheng, Wen-Dan

    2014-10-21

    We studied the electronic and magnetic properties of hole doped KTaO{sub 3}/PbTiO{sub 3} interface using density functional theory methods. Ferromagnetic-nonmagnetic phase transition and metal-insulator phase transition occur simultaneously at the interface with ferroelectric polarization reversal. Furthermore, these two transitions are coupled with each other because hole doping with large concentration of holes gives rise to ferromagnetism. The interfacial magnetization, which is proportional to hole concentration at the interface, can be tuned by ferroelectric polarization, leading to strong intrinsic magnetoelectric effect at the interface of originally nonmagnetic KTaO{sub 3} and PbTiO{sub 3}.

  5. Metal-insulator transition in variably doped (Bi(1-x)Sb(x))2Se3 nanosheets.

    PubMed

    Lee, Chee Huei; He, Rui; Wang, ZhenHua; Qiu, Richard L J; Kumar, Ajay; Delaney, Conor; Beck, Ben; Kidd, T E; Chancey, C C; Sankaran, R Mohan; Gao, Xuan P A

    2013-05-21

    Topological insulators are novel quantum materials with metallic surface transport but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of a topological insulator Bi2Se3 with variable Sb-doping levels to control the electron carrier density and surface transport behavior. (Bi(1-x)Sb(x))2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ∼4 × 10(13) cm(-2) in pure Bi2Se3 (x = 0) to ∼2 × 10(12) cm(-2) in (Bi(1-x)Sb(x))2Se3 at x ∼ 0.15, while maintaining the metallic transport behavior. At x ≳ ∼0.20, a metal-insulator transition (MIT) is observed, indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of the Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems. PMID:23563061

  6. Ultracold fermions in a one-dimensional bipartite optical lattice: Metal-insulator transitions driven by shaking

    NASA Astrophysics Data System (ADS)

    Di Liberto, M.; Malpetti, D.; Japaridze, G. I.; Morais Smith, C.

    2014-08-01

    We theoretically investigate the behavior of a system of fermionic atoms loaded in a bipartite one-dimensional optical lattice that is under the action of an external time-periodic driving force. By using Floquet theory, an effective model is derived. The bare hopping coefficients are renormalized by zeroth-order Bessel functions of the first kind with different arguments for the nearest-neighbor and next-nearest-neighbor hopping. The insulating behavior characterizing the system at half filling in the absence of driving is dynamically suppressed, and for particular values of the driving parameter the system becomes either a standard metal or an unconventional metal with four Fermi points. The existence of the four-Fermi-point metal relies on the fact that, as a consequence of the shaking procedure, the next-nearest-neighbor hopping coefficients become significant compared to the nearest-neighbor ones. We use the bosonization technique to investigate the effect of on-site Hubbard interactions on the four-Fermi-point metal-insulator phase transition. Attractive interactions are expected to enlarge the regime of parameters where the unconventional metallic phase arises, whereas repulsive interactions reduce it. This metallic phase is known to be a Luther-Emery liquid (spin-gapped metal) for both repulsive and attractive interactions, contrary to the usual Hubbard model, which exhibits a Mott-insulator phase for repulsive interactions. Ultracold fermions in driven one-dimensional bipartite optical lattices provide an interesting platform for the realization of this long-studied four-Fermi-point unconventional metal.

  7. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    NASA Astrophysics Data System (ADS)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  8. Low-power laser induced metal-insulator transition in gold::vanadium dioxide nanoarrays

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F.

    2010-10-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconductor-to-metal transition (SMT) that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameter 140 nm with a 60 nm thick film of VO2 by pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a mechanically shuttered 785 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Results show that the presence of Au NPs significantly lowers the threshold laser power required to induce the SMT. Measurements on arrays of different grating constants (350 nm and 500 nm) support the hypothesis that the particles are acting as ``nano-radiators'' that absorb and redeposit thermal energy by scattering light back into the film. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  9. Directing colloidal assembly and a metal-insulator transition using quenched-disordered polymeric networks

    NASA Astrophysics Data System (ADS)

    Phan, Anh; Jadrich, Ryan; Schweizer, Kenneth

    2015-03-01

    Replica integral equation and effective medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly and realize equilibrium states of high electrical conductivity at low physical volume fractions. This is achieved by employing variable mesh size networks of rigid rod or semiflexible polymers as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low dimensional network and fluctuation-driven colloid clustering in the pore spaces, distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. Polymer conformational fluctuations are found to significantly modify the physical adsorption process and hence the ability of colloids to organize along the filamentary network strands. Qualitatively new physical behavior can emerge as the pore size approaches the colloid diameter, reflecting strong frustrating constraints of the template on colloidal assembly.

  10. Probing the Metal-Insulator Transition in BaTiO3 by Electrostatic Doping

    NASA Astrophysics Data System (ADS)

    Raghavan, Santosh; Zhang, Jack Y.; Shoron, Omor F.; Stemmer, Susanne

    2016-07-01

    The metal-to-insulator transition in BaTiO3 is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO3/BaTiO3/SrTiO3 heterostructures are doped with a constant sheet carrier density of 3 ×1014 cm-2 that is introduced via the polar SmTiO3/BaTiO3 interface. Below a critical BaTiO3 thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO3/SrTiO3 interfaces. Above this thickness, data indicate that the BaTiO3 layer becomes ferroelectric. The BaTiO3 lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ˜125 K , and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

  11. Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite

    NASA Astrophysics Data System (ADS)

    Suzuki, Masatsugu; Suzuki, Itsuko S.; Lee, Robert; Walter, Jürgen

    2002-03-01

    Bismuth-metal graphite (MG) has a unique layered structure where Bi nanoparticles are encapsulated in nanographites. The size of nanographite is on the same order as that of Bi nanographite. The observed superconductivity below Tc (= 2.48 K) and the Curie-like Pauli paramagnetic susceptibility below 30 K are related to the high density of states at the Fermi energy arising from edge states of nanographites.^1 A magnetic-field induced transition from metallic to semiconductor-like phase is observed in the in-plane resistivity ρa around Hc (≈ 25 kOe) for both H⊥c and H‖c (c: c axis). The suppression of the metallic phase by H is independent of the directions of H (H‖c and H⊥c) for Bi-MG, suggesting that the spin related effect is significant compared to the orbital effect. The Zeemann energy gSμ_BH at 25 kOe corresponds to a thermal energy k_BTH with TH = 1.7 K, where g = 2 and S = 1/2. The temperature TH is slightly lower than T_c. A negative magnetoresistance in ρa for H⊥c (040 kOe) suggest the occurrence of two-dimensional weak localization effect. ^1K. Wakabayashi, M. Fujita, H. Ajiki, and M. Sigrist, Phys. Rev. 59, 8271 (1999).

  12. Spin Correlations and the Mott-Hubbard Metal-Insulator Transition in Vanadium Trioxide: a Neutron Scattering Study.

    NASA Astrophysics Data System (ADS)

    Bao, Wei

    rm V_2O_3 is a canonical Mott system where strong correlations among electrons drive spectacular metal-insulator transitions and the metallic rm V_2O_3 has served as a prototype of the Brinkman-Rice strongly correlated Fermi liquid. Research in Mott-Hubbard systems has largely focused on charge dynamics. Spin dynamics is widely assumed as described by localized spin fluctuations on the grounds that the electrons in the metal are nearly localized near the Mott transition. Discovery of high T_{C} superconductivity in cuprates and the subsequent attribution of spin fluctuations in pairing electrons demand a better understanding of strongly correlated electron systems in general and spin dynamics of these systems in particular. Using magnetic neutron scattering, we discovered an incommensurate spin density wave in doping stabilized metallic V_{2-y}O _3 at low temperatures, which appears not to be directly related to the antiferromagnetic order in the insulating rm V_2O_3. This weak ordering phenomenon at low temperatures is accompanied by energetic spin fluctuations with large spectral weight throughout the paramagnetic metallic phase of rm V_2O_3, reflecting the itinerant nature of magnetism with an energy scale related to the Fermi energy, in contrast to the conventional k _{B}T ~ J of a localized -spin model, even on the verge of Mott transition. Spin fluctuations in the paramagnetic insulating (V _{1-x}Cr_{x })_2O_3 were discovered to relate to those of paramagnetic metallic rm V_2O_3 rather than to the antiferromagnetic order of the low temperature insulating phase. The short correlation length in the paramagnetic insulator was discovered to be controlled by a mechanism other than thermal spin fluctuations. This unusual property invalidates previous claims of explaining the phase diagram of rm V_2O_3 based on a one-band Hubbard model and indicates the important physical consequences of degenerate Hubbard bands in rm V_2O_3. Work in this dissertation was performed

  13. Metal-Insulator Transitions.

    ERIC Educational Resources Information Center

    Mott, Nevill

    1978-01-01

    Explains how changes in temperature, pressure, magnetic field or alloy composition can affect the electronic band structure of substances, leading in some cases to dramatic changes in conductivity. (GA)

  14. Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy.

    PubMed

    Zhang, Chenxi; Kc, Santosh; Nie, Yifan; Liang, Chaoping; Vandenberghe, William G; Longo, Roberto C; Zheng, Yongping; Kong, Fantai; Hong, Suklyun; Wallace, Robert M; Cho, Kyeongjae

    2016-08-23

    Metal-insulator transitions in low-dimensional materials under ambient conditions are rare and worth pursuing due to their intriguing physics and rich device applications. Monolayer MoTe2 and WTe2 are distinguished from other TMDs by the existence of an exceptional semimetallic distorted octahedral structure (T') with a quite small energy difference from the semiconducting H phase. In the process of transition metal alloying, an equal stability point of the H and the T' phase is observed in the formation energy diagram of monolayer WxMo1-xTe2. This thermodynamically driven phase transition enables a controlled synthesis of the desired phase (H or T') of monolayer WxMo1-xTe2 using a growth method such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Furthermore, charge mediation, as a more feasible method, is found to make the T' phase more stable than the H phase and induce a phase transition from the H phase (semiconducting) to the T' phase (semimetallic) in monolayer WxMo1-xTe2 alloy. This suggests that a dynamic metal-insulator phase transition can be induced, which can be exploited for rich phase transition applications in two-dimensional nanoelectronics. PMID:27415610

  15. Magnetic transformations in the organic conductor κ-(BETS)2Mn[N(CN)2]3 at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Vyaselev, O. M.; Kartsovnik, M. V.; Biberacher, W.; Zorina, L. V.; Kushch, N. D.; Yagubskii, E. B.

    2011-03-01

    A complex study of magnetic properties including dc magnetization, H1 NMR, and magnetic torque measurements has been performed for the organic conductor κ-(BETS)2Mn[N(CN)2]3 which undergoes a metal-insulator transition at TMI≈25K. NMR and the magnetization data indicate a transition in the manganese subsystem from paramagnetic to a frozen state at TMI, which is, however, not a simple Néel type order. Further, a magnetic field induced transition resembling a spin flop has been detected in the torque measurements at temperatures below TMI. This transition is most likely related to the spins of π electrons localized on the organic molecules BETS and coupled with the manganese 3d spins via exchange interaction.

  16. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  17. Ground-state oxygen holes and the metal-insulator transition in the negative charge-transfer rare-earth nickelates

    NASA Astrophysics Data System (ADS)

    Bisogni, Valentina; Catalano, Sara; Green, Robert J.; Gibert, Marta; Scherwitzl, Raoul; Huang, Yaobo; Strocov, Vladimir N.; Zubko, Pavlo; Balandeh, Shadi; Triscone, Jean-Marc; Sawatzky, George; Schmitt, Thorsten

    2016-10-01

    The metal-insulator transition and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here we combine X-ray absorption and resonant inelastic X-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of rare-earth nickelates, taking NdNiO3 thin film as representative example. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for abundant oxygen holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy in line with recent models interpreting the metal-insulator transition in terms of bond disproportionation.

  18. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  19. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-08-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or `Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  20. Charge-density-wave ordering in the metal-insulator transition compound PrRu{sub 4}P{sub 12}

    SciTech Connect

    Lee, C.H.; Matsuhata, H.; Yamaguchi, H.; Sekine, C.; Kihou, K.; Suzuki, T.; Noro, T.; Shirotani, I.

    2004-10-15

    X-ray and electron diffraction measurements on the metal-insulator (M-I) transition compound PrRu{sub 4}P{sub 12} have revealed a periodic ordering of charge density around the Pr atoms. It is found that the ordering is associated with the onset of a low temperature insulator phase. These conclusions are supported by the facts that the space group of the crystal structure transforms from Im3 to Pm3 below the M-I transition temperature and also that the temperature dependence of the superlattice peaks in the insulator phase follows the squared BCS function. The M-I transition could be originated from the perfect nesting of the Fermi surface and/or the instability of the f electrons.

  1. Changes in the electronic structure and spin dynamics across the metal-insulator transition in La1 -xSrxCoO3

    NASA Astrophysics Data System (ADS)

    Smith, R. X.; Hoch, M. J. R.; Moulton, W. G.; Kuhns, P. L.; Reyes, A. P.; Boebinger, G. S.; Zheng, H.; Mitchell, J. F.

    2016-01-01

    The magnetoelectronic properties of La1 -xSrxCoO3 , which include giant magnetoresistance, are strongly dependent on the level of hole doping. The system evolves, with increasing x , from a spin glass insulator to a metallic ferromagnet with a metal-insulator (MI) transition at xC ˜0.18 . Nanoscale phase separation occurs in the insulating phase and persists, to some extent, into the just-metallic phase. The present experiments at 4.2 K have used 139139 La nuclear magnetic resonance to investigate the transition from hopping dynamics for x < xC to Korringa-like ferromagnetic metal behavior for x > xC. A marked decrease in the spin-lattice relaxation rate is found in the vicinity of xC as the MI transition is crossed. This behavior is accounted for in terms of the evolution of the electronic structure and dynamics with cluster size.

  2. Donor Magneto-Spectroscopy and Magnetic Field - Metal-Insulator Transition in MERCURY(1-X) Cadmium(x)tellurium and Indium Antimonide

    NASA Astrophysics Data System (ADS)

    Choi, Jung Bum

    Far infrared (FIR) magneto-transmission studies of n-type Hg_{1-x}Cd _{x}Te (x = 0.198, 0.204, 0.224, 0.237, 0.270) for temperatures down to 1.5K and magnetic fields up to 9T in Voigt and Faraday geometries have been performed. Magneto-optical transitions of donor bound electrons are observed; including the (000) --> (001) and (010) --> (01k_{z}) in the Voigt geometry, and the (000) --> (110) in the Faraday geometry. These identifications are confirmed by their resonance positions, selection rules, and temperature dependence. The experimental observations are consistent with calculations of resonance positions and lineshapes based on the hydrogenic donor model including central cell effects. This work confirms the donor bound electronic ground state for Hg_{1-x}Cd_{x} Te. The magneto-transport and FIR spectroscopy have been combined to probe the nature of the impurity band in the vicinity of the magnetic field induced metal-insulator transition. The results obtained in Hg_ {1-x}Cd_{x}Te and InSb show the persistance of the (000) --> (110) impurity transition through the metal-insulator critical field. This observation demonstrates the existence of the metallic impurity band which is split off from the conduction band. In the studies of the critical behavior of InSb, the conductivity measured for temperatures down to 0.45K shows a dominant linear dependence on temperature near the transition field. Furthermore, the zero-temperature extrapolated conductivity was found to drop continuously to zero at the transition field with a critical exponent of nu = 1.07 +/- 0.07.

  3. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions.

    PubMed

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-14

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases. PMID:27083708

  4. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

    PubMed

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Tok, Eng Soon; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system.

  5. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    SciTech Connect

    Wangoh, L.; Quackenbush, N. F.; Marley, P. M.; Banerjee, S.; Sallis, S.; Fischer, D. A.; Woicik, J. C.; Piper, L. F. J.

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  6. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  7. Origin of the metal-insulator transition in ultrathin films of L a2 /3S r2 /3Mn O3

    NASA Astrophysics Data System (ADS)

    Liao, Zhaoliang; Li, Fengmiao; Gao, Peng; Li, Lin; Guo, Jiandong; Pan, Xiaoqing; Jin, R.; Plummer, E. W.; Zhang, Jiandi

    2015-09-01

    Many ultrathin films of transition metal oxides exhibit nonmetallic behavior, in contrast to their metallic bulk counterpart, thus displaying a metal-insulator transition (MIT) as the film thickness is reduced. The nature of this MIT has been a long-standing issue in the epitaxial oxide research community. Here, we report the processing dependence of the critical thickness (tc) of MIT and the origin of the insulating phase in L a2 /3S r1 /3Mn O3 (LSMO) films. A tc of 3 unit cells (u.c.) is achieved by minimizing oxygen vacancies under optimal growth conditions, diminishing the epitaxial strain with a tunable buffer layer and suppressing surface strain by film capping. The electrical transport measurements demonstrate that the nonmetallic behavior in LSMO thin films is an unavoidable result of localization initiated by inherent disorder but amplified by the reduction in dimensionality.

  8. Cu(Ir1 − xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    PubMed Central

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-01-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 − xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states. PMID:24518384

  9. Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

    NASA Astrophysics Data System (ADS)

    Wei, Haoming; Grundmann, Marius; Lorenz, Michael

    2016-08-01

    Recently, topological conductivity has been predicted theoretically in LaNiO3(111)-based superlattices. Here we report high-quality epitaxial LaNiO3/LaAlO3 superlattices on (111)-oriented SrTiO3 and LaAlO3 single crystals. For both substrates a metal-insulator transition with decreasing number of LaNiO3 monolayers is found. While the electrical transport is dominated by two-dimensional variable range hopping for superlattices grown on polar mismatched SrTiO3(111), it switches to a thermally activated single gap behavior on polar matched LaAlO3(111). The gap energy of the polar double-layer LaNiO3 superlattices can be tuned via the thickness of the insulating LaAlO3 layers.

  10. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    SciTech Connect

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  11. Cu(Ir1 - xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-02-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 - xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

  12. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    PubMed Central

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  13. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

    SciTech Connect

    Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

    2014-02-24

    Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.

  14. Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

    SciTech Connect

    L Whittaker; T Wu; C Patridge; S Ganapathy; S Banerjee

    2011-12-31

    The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation of substitutional tungsten dopants but the impact on the former transition seems far more prominent. In general, the depression in the critical temperatures upon tungsten doping far exceeds corresponding values for bulk W{sub x}V{sub 1-x}O{sub 2} of the same composition. Notably, the depression in phase transition temperature saturates at a relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants in these structures. The marked deviations from bulk behavior are rationalized in terms of a percolative model of the phase transition taking into account the nucleation of locally tetragonal domains and enhanced carrier delocalization that accompany W{sup 6+} doping in the W{sub x}V{sub 1-x}O{sub 2} nanobelts.

  15. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT.

  16. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT. PMID:27253750

  17. Phonon mode spectroscopy, electron-phonon coupling, and the metal-insulator transition in quasi-one-dimensional M2Mo6Se6

    NASA Astrophysics Data System (ADS)

    Petrović, A. P.; Lortz, R.; Santi, G.; Decroux, M.; Monnard, H.; Fischer, Ø.; Boeri, L.; Andersen, O. K.; Kortus, J.; Salloum, D.; Gougeon, P.; Potel, M.

    2010-12-01

    We present electronic-structure calculations, electrical resistivity data, and the first specific-heat measurements in the normal and superconducting states of quasi-one-dimensional M2Mo6Se6 (M=Tl,In,Rb) . Rb2Mo6Se6 undergoes a metal-insulator transition at ˜170K : electronic-structure calculations indicate that this is likely to be driven by the formation of a dynamical charge-density wave. However, Tl2Mo6Se6 and In2Mo6Se6 remain metallic down to low temperature, with superconducting transitions at Tc=4.2K and 2.85 K, respectively. The absence of any metal-insulator transition in these materials is due to a larger in-plane bandwidth, leading to increased interchain hopping which suppresses the density wave instability. Electronic heat-capacity data for the superconducting compounds reveal an exceptionally low density of states DEF=0.055 states eV-1atom-1 , with BCS fits showing 2Δ/kBTc≥5 for Tl2Mo6Se6 and 3.5 for In2Mo6Se6 . Modeling the lattice specific heat with a set of Einstein modes, we obtain the approximate phonon density of states F(ω) . Deconvolving the resistivity for the two superconductors then yields their electron-phonon transport coupling function αtr2F(ω) . In Tl2Mo6Se6 and In2Mo6Se6 , F(ω) is dominated by an optical “guest ion” mode at ˜5meV and a set of acoustic modes from ˜10 to 30 meV. Rb2Mo6Se6 exhibits a similar spectrum; however, the optical phonon has a lower intensity and is shifted to ˜8meV . Electrons in Tl2Mo6Se6 couple strongly to both sets of modes, whereas In2Mo6Se6 only displays significant coupling in the 10-18 meV range. Although pairing is clearly not mediated by the guest ion phonon, we believe it has a beneficial effect on superconductivity in Tl2Mo6Se6 , given its extraordinarily large coupling strength and higher Tc compared to In2Mo6Se6 .

  18. Valence and origin of metal-insulator transition in Mn doped SrRuO{sub 3} studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+U calculation

    SciTech Connect

    Sahu, Ranjan K.; Pandey, Sudhir K.; Pathak, L.C.

    2011-03-15

    We have studied the valence and electronic properties of Mn doped SrRuO{sub 3} using electrical transport measurement, X-ray photoelectron spectroscopy (XPS) and local (spin) density approximation plus Coulomb interaction strength calculation (LSDA+U). The resistivity data revealed that the system undergoes transition from metal to insulator at the critical Mn doping level, x{approx}0.2, which is accompanied by the structural transition from orthorhombic to tetragonal crystal symmetry. Besides, the significant reduction of the spectral weight at the coherent zone (0.8 eV) of the valence band is observed for x>0.2. The core XPS spectra suggest that both the transition elements exist in the mixed ionic pair, Ru{sup +4}/Ru{sup +5{r_reversible}}Mn{sup +3}/Mn{sup +4}. The detail analysis of the results suggests that the Coulomb correlation effect in conjugation with localization of the charge carriers predominate over the mixed ionic pair effect and responsible for the metal-insulator transition in the series. -- Graphical Abstract: XPS data and electrical transport data show that doping of Mn in metallic SrRuO{sub 3} induces mixed ionic pair Ru(IV)/Ru(V){r_reversible}Mn(III)/Mn(IV) and the system undergoes a transition from metal to insulator at the critical Mn doping level, x{approx}0.2. The origin for the metal-insulator transition has been discussed. Display Omitted Research highlights: {yields} We have investigated the electronic properties of SrRu{sub 1-x}Mn{sub x}O{sub 3} spectroscopically, which shows metal-insulator transition at the critical Mn doping concentartion x{approx}0.2. {yields} We report the valence states of Ru and Mn in the series. {yields} We also report the responsible mechanism for the metal-insulator transition in the series.

  19. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  20. Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation

    NASA Astrophysics Data System (ADS)

    Crunteanu, Aurelian; Fabert, Marc; Cornette, Julie; Colas, Maggy; Orlianges, Jean-Christophe; Bessaudou, Annie; Cosset, Françoise

    2014-03-01

    We present the vanadium dioxide (VO2) thin films deposition using e-beam evaporation of a vanadium target under oxygen atmosphere on different substrates (sapphire, Si, SiO2/Si…) and we focus on their electrical and optical properties variations as the material undergoes a metal-insulator transition under thermal and electrical stimuli. The phase transition induces extremely abrupt changes in the electronic and optical properties of the material: the electrical resistivity increases up to 5 orders of magnitude while the optical properties (transmission, reflection, refractive index) are drastically modified. We present the integration of these films in simple planar optical devices and we demonstrate electrical-activated optical modulators for visible-infrared signals with high discrimination between the two states. We will highlight a peculiar behavior of the VO2 material in the infrared and far infrared regions (2- 20 μm), namely its anomalous emissivity change under thermal- end electrical activation (negative differential emittance phenomenon) with potential applications in active coatings for thermal regulation, optical limiting or camouflage coatings.

  1. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  2. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    SciTech Connect

    Park, Tae-Eon; Jang, Chaun E-mail: presto@kist.re.kr; Suh, Joonki; Wu, Junqiao; Seo, Dongjea; Park, Joonsuk; Lin, Der-Yuh; Huang, Ying-Sheng; Choi, Heon-Jin; Chang, Joonyeon E-mail: presto@kist.re.kr

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  3. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

    PubMed Central

    Lee, Hong Sub; Choi, Sun Gyu; Park, Hyung-Ho; Rozenberg, M. J.

    2013-01-01

    Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr0.7Ca0.3MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

  4. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  5. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  6. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  7. Correlation driven metal insulator transition as a function of thickness in SrRuO3 thin films

    NASA Astrophysics Data System (ADS)

    Koster, Gertjan; Blok, Jeroen; Siemons, Wolter; Zhong, Zhicheng; Kelly, Paul; Rijnders, Guus; Blank, Dave

    2010-03-01

    Recently there has been debate on the existence of a fundamental thickness limit of a metallic ground state of SrRuO3 thin films and what mechanism drives the system to an insulating state at low thicknesses should there be a transition. We present further evidence that a fundamental thickness level does indeed exist and that the metal-to-insulator transition is in fact a transition from a conducting ferromagnetic state to an insulating anti-ferromagnetic state that occurs from 3 to 4 unit cell layers of SrRuO3. We show this in two steps, in the first step we do Density Functional calculations on SrRuO3 that show a ferromagnetic -- anti-ferromagnetic phase transition occurring in SrRuO3 at large values of the electron correlation correlation U. In the second step we use ruthenium 3d x-ray photoemission spectra obtained in situ to demonstrate that U increases for very thin films of SrRuO3, driving the metal-to-insulator transition.

  8. Metal-insulator transition in AC{sub 60}:RbC{sub 60} and KC{sub 60}

    SciTech Connect

    Khazeni, K.; Crespi, V.H.; Hone, J.; Zettl, A.; Cohen, M.L. |

    1997-09-01

    At zero pressure polymerized RbC{sub 60} is an insulator, whereas polymerized KC{sub 60} is a metal with a slight low-temperature resistive upturn. We report measurements of the resistivity of RbC{sub 60} under pressure, finding a hysteretic resistive transition in RbC{sub 60} near 200 K at 5 kbar, at which point the material transforms from insulator to metal. Correcting the resistivity to constant volume, both materials are metallic below the transition with a common low-temperature resistive upturn which is suppressed under compression. {copyright} {ital 1997} {ital The American Physical Society}

  9. Transport properties and metal-insulator transition in oxygen deficient LaNiO3: a density functional theory study

    NASA Astrophysics Data System (ADS)

    Misra, D.; Kundu, T. K.

    2016-09-01

    Density functional theory with appropriate functional has been employed to investigate the metal to insulator transition in oxygen deficient LaNiO3-x (x = 0.0, 0.25, 0.5, 1.0) compounds. While the metallic nature of LaNiO3 is characterized by the low temperature Fermi liquid behavior of resistivity and a finite density of states at the Fermi level, the density of states and the transport properties clearly identify LaNiO2.75 as a semiconductor, and LaNiO2.5 as an insulator, which is followed by another insulator to semiconductor transition with further increase of x to ‘1’ in LaNiO2. This oxygen vacancy controlled metal to insulator transition is explained on the basis of non-adiabatic polaronic transport. From the covalency metric calculation of the chemical bonding and the Bader charge transfer analysis, this metal to insulator transition is attributed to the enhanced covalent part in the chemical bonding and reduced charge transfer from Ni to O atoms in LaNiO3-x compounds.

  10. Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation.

    PubMed

    Jeong, Jaewoo; Aetukuri, Nagaphani; Graf, Tanja; Schladt, Thomas D; Samant, Mahesh G; Parkin, Stuart S P

    2013-03-22

    Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in correlated insulators. An archetypal correlated material is vanadium dioxide (VO(2)), which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO(2) suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed. We found that electrolyte gating of VO(2) leads not to electrostatically induced carriers but instead to the electric field-induced creation of oxygen vacancies, with consequent migration of oxygen from the oxide film into the ionic liquid. This mechanism should be taken into account in the interpretation of ionic liquid gating experiments.

  11. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    SciTech Connect

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-24

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase.

  12. Metal-insulator transition and novel magnetism driven by Coulomb interactions, spin-orbit coupling and disorder

    NASA Astrophysics Data System (ADS)

    Meetei, Oinam Nganba

    Strong interactions in transition metal oxides can lead to spectacular phenomena like high Tc superconductivity and colossal magnetoresistance which have dominated materials research in the past decades. The goal of this thesis is to examine the interplay of strong correlations with additional degrees of freedom, like spin orbit coupling (SOC), multiple transition metal ions and disorder. We start with a discussion of Mott insulators, with the transition metal in the d4 configuration, where the competition between superexchange interaction and SOC leads to a novel ferromagnetic insulator. In recent years SOC has been at the center stage of condensed matter research because it can produce band insulators in uncorrelated materials with non-trivial topological properties. Here, we focus on the dual role of SOC and strong interactions, naturally realized in 4d/5dd transition metal oxides. We show that in d4 Mott insulators, the local moment can be altered by varying the relative strength of SOC and superexchange, both of which are small parameters compared to the interaction energy scale. In fact, a phase transition from a non-magnetic insulator with J=0 singlets at every site to an orbitally entangled ferromagnetic insulator occurs with decreasing SOC. Our results challenge the commonly held notion that local moments are robust in a Mott insulator. We identify candidate materials and present predictions for Resonant X-ray Scattering (RXS) signatures of the unusual magnetism in d4 Mott insulators. Next we focus on the double perovskite material Sr2 CrOsO6 which is an insulator and has the highest ferromagnetic Tc among all perovskites with a net moment. It presents several puzzles which we address systematically. Its insulating behavior cannot be explained from a band theory point of view or from a naive consideration of Mott physics. Additionally, the net moment at low temperature, M(0)=0.75 μΒ ,is unusual for half-filled bands where anti-ferromagnetism is expected

  13. Field-dependent perpendicular magnetic anisotropy and interfacial metal-insulator transition in CoFeB/MgO systems

    NASA Astrophysics Data System (ADS)

    Barsukov, Igor; Fu, Yu; Safranski, C.; Chen, Yu-Jin; Youngblood, B.; Goncalves, A.; Sampaio, L.; Arias, R.; Spasova, M.; Farle, M.; Krivorotov, I.

    2015-03-01

    The CoFeB/MgO systems play a central role in magnetic tunnel junction devices due to the high tunneling magnetoresistance ratio. A strong perpendicular anisotropy (PMA) and voltage-controlled anisotropy are beneficial for spintronics application. We study PMA in thin films of Ta/Co20Fe60B20/MgO in the thickness range of 0.9-2.5 nm and find that it can be best described by the first two order terms. Surprisingly, we find PMA to be strongly field-dependent. Our results show that the field dependence has significant implications for determining and customizing magnetic anisotropy in spintronic applications. Our data suggest that it can be caused by an inhomogeneous interfacial spin pinning with a possibly ferrimagnetic phase at the CoFeB/MgO interface. We perform magnetometry and transport measurements and find a magnetization peak and resistance transitions at 160K, which are consistent with the presence of an interfacial oxide phase undergoing a Morin-like transition.

  14. Metal-insulator transition in Nd{sub 1−x}Eu{sub x}NiO{sub 3}: Entropy change and electronic delocalization

    SciTech Connect

    Jardim, R. F. Andrade, S.; Barbeta, V. B.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-07

    The metal-insulator (MI) phase transition in Nd{sub 1–x}Eu{sub x}NiO{sub 3}, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat C{sub P}(T). The MI transition temperature (T{sub MI}) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dT{sub MI}/dP were found: (i) for x ≤ 0.15, dT{sub MI}/dP is nearly constant and ∼−4.3 K/kbar; (ii) for x ≥ 0.15, dT{sub MI}/dP increases with x and it seems to reach a saturation value ∼−6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of T{sub MI}. The entropy change (ΔS) at T{sub MI} for the sample x = 0, estimated by using the dT{sub MI}/dP data and the Clausius-Clapeyron equation, resulted in ΔS ∼ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔS{sub M} ∼ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and C{sub P}(T) data indicates that the entropy change at T{sub MI} is mainly due to the electronic delocalization and not related to the AF transition.

  15. Metal insulator transition in vanadium dioxide nanobeams and magnetic-field asymmetry of nonlinear transport in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wei, Jiang

    This dissertation includes two research projects. The first project of vanadium dioxide nanobeams (VO2) shows that there are many advantages to be gained from working with strongly correlated materials in nanoscale crystalline form. Small VO2 single crystals display abundant new properties. It is shown that metallic and insulating phases can coexist in VO2 due to the growth introduced strain. From the simple physical system of length-confined suspended VO2 naonobeam, it is observed that metallic phase supercools and the resistivity of insulating phase remains constant when metal and insulator coexist. Most importantly, the constant resistivity indicates that the MIT in VO2 is driven by strong electron-electron interactions. Also based on the unique mechanical buckling behavior of suspended VO2 nanobeam, we developed a new way of measuring the intrinsic transition temperature Tc, which is independent of hysteresis. Beyond these findings, we proposed a new phase diagram including a stable M2 phase, which can more accurately describe and explain all the variety of behavior of VO2 nanocrystals. However, many basic question remain about the behavior of VO2 such as the detailed form of the phase diagram including the precise phase boundaries between all three phases; effects of surface energy and finite geometry, surface doping, and other parameters on stability in small crystals; and kinetics of the transition. We may hope that once the fundamental behavior of the system has been better established theoretical progress will finally be possible in understanding the basic nature of the transition. In second research project, we have carried out the first experimental study of a new transport coefficient in nanoscale devices, namely, the magnitude of the V2B term in the I-V characteristics. This coefficient provides a way to quantify the electron-electron interaction strength, which is of particular interest in our chosen system of single-walled carbon nanotubes. We also

  16. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

  17. Directing Colloidal Assembly and a Metal-Insulator Transition Using a Quench-Disordered Porous Rod Template

    NASA Astrophysics Data System (ADS)

    Jadrich, Ryan B.; Schweizer, Kenneth S.

    2014-11-01

    Replica and effective-medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly to achieve globally homogeneous, strongly clustered, and percolated equilibrium states of high electrical conductivity at low physical volume fractions. A key idea is to employ a quench-disordered, large-mesh rigid-rod network as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low-dimensional network and fluctuation-driven colloid clustering in the pore spaces, two distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. The approach is generalizable to more complicated template or colloidal architectures.

  18. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    PubMed Central

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-01-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent. PMID:27033955

  19. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  20. Superconductivity and crystal structural origins of the metal-insulator transition in Ba6 -xSrxNb10O30 tetragonal tungsten bronzes

    NASA Astrophysics Data System (ADS)

    Kolodiaznyi, Taras; Sakurai, Hiroya; Isobe, Masaaki; Matsushita, Yoshitaka; Forbes, Scott; Mozharivskyj, Yurij; Munsie, Timothy J. S.; Luke, Graeme M.; Gurak, Mary; Clarke, David R.

    2015-12-01

    Ba6 -xSrxNb10O30 solid solution with 0 ≤ x ≤6 forms the filled tetragonal tungsten bronze (TTB) structure. The Ba-end member crystallizes in the highest symmetry P 4 /m b m space group (a =b =12.5842 (18 )Å and c =3.9995 (8 )Å ) and so do all the compositions with 0 ≤ x ≤5 . The Sr-end member of the solid solution crystallizes in the tentatively assigned A m a m space group (a *=17.506 (4 )Å , b *=34.932 (7 )Å , and c *=7.7777 (2 )Å ). The latter space group is related to the parent P 4 /m b m TTB structure as a * ≈ √{2 }a ,b * ≈2 √{2 }a ,c *=2 c . Low-temperature specific heat measurements indicate that the Ba-rich compositions with x ≤2 are conventional BCS superconductors with TC ≤1.6 K and superconducting energy gaps of ≤0.38 meV. The values of the TC in the cation-filled Nb-based TTBs reported here are comparable with those of the unfilled KxWO3 and NaxWO3 TTBs having large alkali ion deficiency. As the unit cell volume decreases with increasing x , an unexpected metal-insulator transition (MIT) in Ba6 -xSrxNb10O30 occurs at x ≥3 . We discuss the possible origins of the MIT in terms of the carrier concentration, symmetry break, and Anderson localization.

  1. Polarity and the Metal-Insulator Transition in ultrathin LaNiO3 on SrTiO3

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Tung, I. C.; Luo, G.; Zhou, H.; Lee, J. H.; Chang, S. H.; Morgan, D.; Bedzyk, M. J.; Fong, D. D.

    Dimensionality and strain control of nickelates has been shown as a route for control of interesting electronic and magnetic phases. However, little is know about the evolution of atomic structure in these layered architectures and the interplay with these states. Here we present, a detailed study of lattice structures measured real time during the layer-by-layer growth of LaNiO3 on SrTiO3. Using hard X-rays coupled with oxide MBE, we have tracked the lattice structure evolution as a function of depth across the regime where transport shows a clear metal to insulator transition. At the same time X-ray absorption shows the films are closer to LaNiO2.5 when thin and evolve to LaNiO3 by 10 unit cells thickness. Analysis of the structure during growth displays a very complex evolution throughout the film of the lattice parameter and displacement of the B-site from the unit cell center, which theory connects with pathways of compensating the polar mismatch at the surface and interface. Work at the APS, Argonne is supported by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  2. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    DOE PAGES

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Usingmore » space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

  3. Energy level transitions of gas in a 2D nanopore

    SciTech Connect

    Grinyaev, Yurii V.; Chertova, Nadezhda V.; Psakhie, Sergei G.

    2015-10-27

    An analytical study of gas behavior in a 2D nanopore was performed. It is shown that the temperature dependence of gas energy can be stepwise due to transitions from one size-quantized subband to another. Taking into account quantum size effects results in energy level transitions governed by the nanopore size, temperature and gas density. This effect leads to an abrupt change of gas heat capacity in the nanopore at the above varying system parameters.

  4. Flow transitions in a 2D directional solidification model

    NASA Technical Reports Server (NTRS)

    Larroude, Philippe; Ouazzani, Jalil; Alexander, J. Iwan D.

    1992-01-01

    Flow transitions in a Two Dimensional (2D) model of crystal growth were examined using the Bridgman-Stockbarger me thod. Using a pseudo-spectral Chebyshev collocation method, the governing equations yield solutions which exhibit a symmetry breaking flow tansition and oscillatory behavior indicative of a Hopf bifurcation at higher values of Ra. The results are discussed from fluid dynamic viewpoint, and broader implications for process models are also addressed.

  5. 2D ice from first principles: structures and phase transitions

    NASA Astrophysics Data System (ADS)

    Chen, Ji; Schusteritsch, Georg; Pickard, Chris J.; Salzmann, Christoph G.; Michaelides, Angelos

    Despite relevance to disparate areas such as cloud microphysics and tribology, major gaps in the understanding of the structures and phase transitions of low-dimensional water ice remain. Here we report a first principles study of confined 2D ice as a function of pressure. We find that at ambient pressure hexagonal and pentagonal monolayer structures are the two lowest enthalpy phases identified. Upon mild compression the pentagonal structure becomes the most stable and persists up to ca. 2 GPa at which point square and rhombic phases are stable. The square phase agrees with recent experimental observations of square ice confined within graphene sheets. We also find a double layer AA stacked square ice phase, which clarifies the difference between experimental observations and earlier force field simulations. This work provides a fresh perspective on 2D confined ice, highlighting the sensitivity of the structures observed to both the confining pressure and width.

  6. Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1 -xSbxTe2 studied by angle-resolved photoemission

    NASA Astrophysics Data System (ADS)

    Trang, Chi Xuan; Wang, Zhiwei; Yamada, Keiko; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Segawa, Kouji; Ando, Yoichi

    2016-04-01

    We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1 -xSbxTe2 which is bulk insulating at 0.5 ≲x ≲0.9 and undergoes a metal-insulator-metal transition with the Sb content x . We found that this transition is characterized by a systematic hole doping with increasing x , which results in the Fermi-level crossings of the bulk conduction and valence bands at x ˜0 and x ˜1 , respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1 -xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

  7. DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film

    SciTech Connect

    Huang, Haoliang; Luo, Zhenlin Yang, Yuanjun; Yang, Mengmeng; Wang, Haibo; Hu, Sixia; Bao, Jun; Yun, Yu; Meng, Dechao; Lu, Yalin; Gao, Chen

    2014-05-15

    The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2} to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

  8. Metal-Insulator Transition of the New One-Dimensional Organic Conductors with Complete Uniform Stacks: (DMEDO-TTF)2X (X = ClO4 and BF4)

    NASA Astrophysics Data System (ADS)

    Kumeta, Shohei; Kawamoto, Tadashi; Shirahata, Takashi; Misaki, Yohji; Mori, Takehiko

    2016-09-01

    The structural, transport, and magnetic properties of the new organic conductors (DMEDO-TTF)2X (X = ClO4 and BF4), where DMEDO-TTF is dimethyl(ethylenedioxy)tetrathiafulvalene, have been investigated. These compounds have a complete uniform stack structure, indicating that a quasi-one-dimensional 3/4-filled band without a dimerization gap is realized. The ClO4 and BF4 salts show a first-order metal-insulator (MI) transition at approximately 190 and 210 K, respectively, in the cooling process. The ground state is a nonmagnetic insulator on the basis of magnetic susceptibility measurements. Low-temperature X-ray diffraction measurements show that the MI transition originates in the anion ordering transition with a superstructure wave vector of q = (0,1/2,0) corresponding to the stacking direction; the uniform donor stacking structure changes to the tetramerized structure with a large shift of the donors. The shift of the anion toward the central two donors in a tetramer indicates that the insulating phase is a charge-density-wave state.

  9. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    SciTech Connect

    Shao, Tao; Qi, Zeming Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin; Wang, Yu; Liu, Miao

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  10. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in kappa-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br.

    SciTech Connect

    Brandenburg, J.; Muller, J.; Schlueter, J. A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt {kappa}-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  11. The metal-insulator transition in nanocrystalline Pr0.67Ca0.33MnO3: the correlation between supercooling and kinetic arrest.

    PubMed

    Rawat, R; Chaddah, P; Bag, Pallab; Das, Kalipada; Das, I

    2012-10-17

    The transition and hysteresis widths of a disorder broadened first order magnetic transition vary in H-T space which influences the co-existing phase fraction at low temperature arising due to kinetic arrest of the first order transition. We explored the role of change in the relative width of the supercooling/superheating band and kinetic arrest band for a ferromagnetic metallic to antiferromagnetic insulating transition. It is shown that for a correlated kinetic arrest and supercooling bands, the topology of the devitrification curves (or transformation across the (H(K),T(K)) band during warming) changes with the change in the relative width of these two bands. In addition to this, for a broader kinetic arrest band, the transformation temperature across the superheating band under constant H now depends on the arrested phase fraction. These predictions have been tested on nanocrystalline Pr(0.67)Ca(0.33)MnO(3), which is known to show a large variation in hysteresis width in H-T space. This is the first report where correlation between the kinetic arrest band and the supercooling band has been shown experimentally, in contrast to the universal observation of anticorrelation reported so far.

  12. Enhanced ferromagnetic and metal insulator transition in Sm0.55Sr0.45MnO3 thin films: Role of oxygen vacancy induced quenched disorder

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Siwach, P. K.; Kaur, A.; Singh, H. K.

    2010-11-01

    Effect of quenched disorder (QD) caused by oxygen vacancy (OV) and substrate induced inhomogeneous compressive strain, on the magnetic and transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films is investigated. QD is related intimately to the ordering/disordering of the OVs and controls the paramagnetic-ferromagnetic/insulator-metal transition. OV ordered films show enhanced TC/TIM˜165 K, which is depressed by oxygen annealing. OV disordering realized by quenching reduces TC/TIM. The first order IM transition observed in SSMO single crystals is transformed into nonhysteretic and continuous one in the OV ordered films. QD appears to be diluted by OV disorder/annihilation and results in stronger carrier localization.

  13. Metal insulator transition and magnetotransport anomalies in perovskite SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Lee, Yong Woo; Kim, Sang Woo; Jeong, Yoon Hee

    2015-03-21

    We investigated the nature of transport and magnetic properties in SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} (SIRO), which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (e.g., SrTiO{sub 3} (001), (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7} (001), and LaAlO{sub 3} (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures (T{sub MIT} ∼ 80 K on SrTiO{sub 3}, ∼90 K on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7}, and ∼100 K on LaAlO{sub 3}) in resistivity. At temperature 300 K ≥ T ≥ T{sub MIT}, SIRO is metallic and its resistivity follows a T{sup 3/2} power law, whereas insulating nature at T < T{sub MIT} is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO{sub 3} (001) shows negative MR at T < 25 K and positive MR at T > 25 K, with negative MR ∝ B{sup 1/2} and positive MR ∝ B{sup 2}; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO{sub 3} (001) at T < 25 K in the localized regime validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.

  14. 2D to 3D transition of polymeric carbon nitride nanosheets

    SciTech Connect

    Chamorro-Posada, Pedro; Vázquez-Cabo, José; Martín-Ramos, Pablo; Martín-Gil, Jesús; Navas-Gracia, Luis M.; Dante, Roberto C.

    2014-11-15

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

  15. Height-dependent transition from 3-D to 2-D turbulence in the hurricane boundary layer

    NASA Astrophysics Data System (ADS)

    Byrne, David; Zhang, Jun A.

    2013-04-01

    Here we show, from in situ aircraft measurements in the hurricane boundary layer, a height-dependent transition of the flow from 3-D to 2-D turbulence. This marks a fundamental change in the energy dynamics of the hurricane boundary layer due to the fact that in 3-D, energy flows downscale from larger to smaller scales, whereas in 2-D, it flows upscale, from smaller to larger scales. These results represent the first measurement of the 2-D upscale energy flux in the atmosphere and also the first to characterize the transition from 3-D to 2-D. It is shown that the large-scale parent vortex may gain energy directly from small scales in tropical cyclones.

  16. Measurements of Schottky barrier heights formed from metals and 2D transition metal dichalcogedides

    NASA Astrophysics Data System (ADS)

    Kim, Changsik; Moon, Inyong; Nam, Seunggeol; Cho, Yeonchoo; Shin, Hyeon-Jin; Park, Seongjun; Yoo, Won Jong

    Schottky barrier height (SBH) is an important parameter that needs to be considered for designing electronic devices. However, for two dimensional (2D) materials based devices, SBH control is limited by 2D structure induced quantum confinement and 2D surface induced Fermi level pinning. In this work, we explore differences in measuring SBH between 2D and 3D materials. Recently, low temperature I-V measurement has been reported to extract SBH based on thermionic emission equation for Schottky diode. However, 2D devices are not real Schottky diode in that both source and drain metal electrodes make Schottky contact. According to our experimental results, SBH extracted from linear slope of ln (I/T3/2) against 1/T show widely diverse values, dependent on applied voltage bias and tested temperature which affect carrier transport including tunneling or thermionic emission across the metal-2D material interface. In this work, we wish to demonstrate the method to determine SBH and Fermi level pinning which are attributed to 2D transition metal dichalcogedides, differently from conventional 3D materials. .

  17. Blue Phosphorene Oxide: Strain-Tunable Quantum Phase Transitions and Novel 2D Emergent Fermions

    NASA Astrophysics Data System (ADS)

    Zhu, Liyan; Wang, Shan-Shan; Guan, Shan; Liu, Ying; Zhang, Tingting; Chen, Guibin; Yang, Shengyuan A.

    2016-10-01

    Tunable quantum phase transitions and novel emergent fermions in solid state materials are fascinating subjects of research. Here, we propose a new stable two-dimensional (2D) material, the blue phosphorene oxide (BPO), which exhibits both. Based on first-principles calculations, we show that its equilibrium state is a narrow-bandgap semiconductor with three bands at low energy. Remarkably, a moderate strain can drive a semiconductor-to-semimetal quantum phase transition in BPO. At the critical transition point, the three bands cross at a single point at Fermi level, around which the quasiparticles are a novel type of 2D pseudospin-1 fermions. Going beyond the transition, the system becomes a symmetry-protected semimetal, for which the conduction and valence bands touch quadratically at a single Fermi point that is protected by symmetry, and the low-energy quasiparticles become another novel type of 2D double Weyl fermions. We construct effective models characterizing the phase transition and these novel emergent fermions, and we point out several exotic effects, including super Klein tunneling, supercollimation, and universal optical absorbance. Our result reveals BPO as an intriguing platform for the exploration of fundamental properties of quantum phase transitions and novel emergent fermions, and also suggests its great potential in nanoscale device applications.

  18. 2D crystals of transition metal dichalcogenide and their iontronic functionalities

    NASA Astrophysics Data System (ADS)

    Zhang, Y. J.; Yoshida, M.; Suzuki, R.; Iwasa, Y.

    2015-12-01

    2D crystals based on transition metal dichalcogenides (TMDs) provide a unique platform of novel physical properties and functionalities, including photoluminescence, laser, valleytronics, spintronics, piezoelectric devices, field effect transistors (FETs), and superconductivity. Among them, FET devices are extremely useful because of voltage-tunable carrier density and Fermi energy. In particular, high density charge accumulation in electric double layer transistor (EDLT), which is a FET device driven by ionic motions, is playing key roles for expanding the functionalities of TMD based 2D crystals. Here, we report several device concepts which were realized by introducing EDLTs in TMDs, taking the advantage of their extremely unique band structures and phase transition phenomena realized simply by thinning to the monolayer level. We address two kinds of TMDs based on group VI and group V transition metals, which basically yield semiconductors and metals, respectively. For each system, we first introduce peculiar characteristics of TMDs achieved by thinning the crystals, followed by the related FET functionalities.

  19. Spectroscopic investigation of the 3d 2D → nf 2F transitions in lithium

    NASA Astrophysics Data System (ADS)

    Shahzada, S.; Shah, M.; Haq, S. U.; Nawaz, M.; Ahmed, M.; Nadeem, Ali

    2016-05-01

    We report term energies and effective quantum numbers of the odd parity 3d 2D → nf 2F series of lithium using multi-step and multi-photon laser excitation schemes. The experiments were performed using three dye lasers simultaneously pumped by the second harmonic (532 nm) of a Q-switched Nd:YAG laser in conjunction with an atomic beam apparatus and thermionic diode ion detector. The first ionization potential of lithium has been determined as 43,487.13 ± 0.02 cm- 1 from the much extended 3d 2D → nf 2F (17 ≤ n ≤ 70) series. In addition, the oscillator strengths of the 3d 2D → nf 2F (15 ≤ n ≤ 48) transitions have been determined, showing a decreasing trend with the increase in principal quantum number n.

  20. Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

    SciTech Connect

    Das, Amit K. Ajimsha, R. S.; Kukreja, L. M.

    2014-05-21

    Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.

  1. The 2d MIT: The Pseudogap and Fermi Liquid Theory

    NASA Astrophysics Data System (ADS)

    Castner, T. G.

    2005-06-01

    Fermi liquid theory for the 2d metal-insulator transition is extended to include the correlation gap in the density-of-states. The results are consistent with the scaling form g=gce[on(To/T)] at T larger than a characteristic T* ∝ xTc (Tc=Ec= mobility edge). The two-component model n1+nloc=n=nc(1+x) for n>nc is required and the theory explains the T-dependence of the data of Hanein et al. for p-type GaAs.

  2. Construction of 2D atomic crystals on transition metal surfaces: graphene, silicene, and hafnene.

    PubMed

    Pan, Yi; Zhang, Lizhi; Huang, Li; Li, Linfei; Meng, Lei; Gao, Min; Huan, Qing; Lin, Xiao; Wang, Yeliang; Du, Shixuan; Freund, Hans-Joachim; Gao, Hong-Jun

    2014-06-12

    The synthesis and structures of graphene on Ru(0001) and Pt(111), silicene on Ag(111) and Ir(111) and the honeycomb hafnium lattice on Ir(111) are reviewed. Epitaxy on a transition metal (TM) substrate is a pro-mising method to produce a variety of two dimensional (2D) atomic crystals which potentially can be used in next generation electronic devices. This method is particularly valuable in the case of producing 2D materials that do not exist in 3D forms, for instance, silicene. Based on the intensive investigations of epitaxial graphene on TM in recent years, it is known that the quality of graphene is affected by many factors, including the interaction between the 2D material overlayer and the substrate, the lattice mismatch, the nucleation density at the early stage of growth. It is found that these factors also apply to many other epitaxial 2D crystals on TM. The knowledge from the reviewed systems will shine light on the design and synthesis of new 2D crystals with novel properties.

  3. Numerical studies of the melting transition in 2D Yukawa systems

    SciTech Connect

    Hartmann, P.; Donko, Z.; Kalman, G. J.

    2008-09-07

    We present the latest results of our systematic studies of the solid--liquid phase transition in 2D classical many-particle systems interacting with the Yukawa potential. Our previous work is extended by applying the molecular dynamic simulations to systems with up to 1.6 million particles in the computational box (for {kappa} = 2 case). Equilibrium simulations are performed for different coupling parameters in the vicinity of the expected melting transition ({gamma}{sub m}{sup {kappa}}{sup ={sup 2}}{approx_equal}415) and a wide range of observables are averaged over uncorrelated samples of the micro-canonical ensemble generated by the simulations.

  4. Frequency Comb Assisted IR Measurements of H_3^+, H_2D^+ and D_2H^+ Transitions

    NASA Astrophysics Data System (ADS)

    Jusko, Pavol; Asvany, Oskar; Schlemmer, Stephan

    2016-06-01

    We present recent measurements of the fundamental transitions of H_3^+, H_2D^+ and D_2H^+ in a 4 K 22-pole trap by action spectroscopic techniques. Either Laser Induced Inhibition of Cluster Growth (He attachment at T≈4 K), endothermic reaction of H_3^+ with O_2, or deuterium exchange has been used as measurement scheme. We used a 3 μm optical parametric oscillator coupled to a frequency comb in order to achieve accuracy generally below 1 MHz. Five transitions of H_3^+, eleven of H_2D^+ and ten of D_2H^+ were recorder in our spectral range. We compare our H_3^+ results with two previous frequency comb assisted works. Moreover, accurate determination of the frequency allows us to predict pure rotational transitions for H_2D^+ and D_2H^+ in the THz range. P. Jusko, C. Konietzko, S. Schlemmer, O. Asvany, J. Mol. Spec. 319 (2016) 55 O. Asvany, S. Brünken, L. Kluge, S. Schlemmer, Appl. Phys. B 114 (2014) 203 O. Asvany, J. Krieg, S. Schlemmer, Rev. Sci. Instr. 83 (2012) 093110 J.N. Hodges, A.J. Perry, P.A. Jenkins, B.M. Siller, B.J. McCall, J. Chem. Phys. 139 (2013) 164201 H.-C. Chen, C.-Y. Hsiao, J.-L. Peng, T. Amano, J.-T. Shy, Phys. Rev. Lett. 109 (2012) 263002

  5. Determining Transition State Geometries in Liquids Using 2D-IR

    SciTech Connect

    Harris, Charles; Cahoon, James F.; Sawyer, Karma R.; Schlegel, Jacob P.; Harris, Charles B.

    2007-12-11

    Many properties of chemical reactions are determined by the transition state connecting reactant and product, yet it is difficult to directly obtain any information about these short-lived structures in liquids. We show that two-dimensional infrared (2D-IR) spectroscopy can provide direct information about transition states by tracking the transformation of vibrational modes as a molecule crossed a transition state. We successfully monitored a simple chemical reaction, the fluxional rearrangement of Fe(CO)5, in which the exchange of axial and equatorial CO ligands causes an exchange of vibrational energy between the normal modes of the molecule. This energy transfer provides direct evidence regarding the time scale, transition state, and mechanism of the reaction.

  6. Roton Excitations and the Fluid-Solid Phase Transition in Superfluid 2D Yukawa Bosons

    NASA Astrophysics Data System (ADS)

    Molinelli, S.; Galli, D. E.; Reatto, L.; Motta, M.

    2016-10-01

    We compute several ground-state properties and the dynamical structure factor of a zero-temperature system of Bosons interacting with the 2D screened Coulomb (2D-SC) potential. We resort to the exact shadow path integral ground state (SPIGS) quantum Monte Carlo method to compute the imaginary-time correlation function of the model, and to the genetic algorithm via falsification of theories (GIFT) to retrieve the dynamical structure factor. We provide a detailed comparison of ground-state properties and collective excitations of 2D-SC and ^4He atoms. The roton energy of the 2D-SC system is an increasing function of density, and not a decreasing one as in ^4He. This result is in contrast with the view that the roton is the soft mode of the fluid-solid transition. We uncover a remarkable quasi-universality of backflow and of other properties when expressed in terms of the amount of short-range order as quantified by the height of the first peak of the static structure factor.

  7. Roton Excitations and the Fluid-Solid Phase Transition in Superfluid 2D Yukawa Bosons

    NASA Astrophysics Data System (ADS)

    Molinelli, S.; Galli, D. E.; Reatto, L.; Motta, M.

    2016-05-01

    We compute several ground-state properties and the dynamical structure factor of a zero-temperature system of Bosons interacting with the 2D screened Coulomb (2D-SC) potential. We resort to the exact shadow path integral ground state (SPIGS) quantum Monte Carlo method to compute the imaginary-time correlation function of the model, and to the genetic algorithm via falsification of theories (GIFT) to retrieve the dynamical structure factor. We provide a detailed comparison of ground-state properties and collective excitations of 2D-SC and ^4 He atoms. The roton energy of the 2D-SC system is an increasing function of density, and not a decreasing one as in ^4 He. This result is in contrast with the view that the roton is the soft mode of the fluid-solid transition. We uncover a remarkable quasi-universality of backflow and of other properties when expressed in terms of the amount of short-range order as quantified by the height of the first peak of the static structure factor.

  8. Pressure effects on the Cl 2 (D'-A') transition at 258 nm

    NASA Astrophysics Data System (ADS)

    Nee, J. B.; Hubinger, S.

    1996-11-01

    UV emission at 258 nm from the transition of Cl 2(D'-A') was investigated by photoexcitation of the Rydberg states at pressures between 1 and 100 Torr. The intensity of the UV fluorescence produced was increased by a factor of two when the pressure of the buffer gas N 2 was increased from 1 to 20 Torr. Characteristic pressures for quenching and fluorescence enhancement were derived. Kinetic studies revealed the mechanism of the interstate transitions about the generation of the D'-A' transition. A vibrational state redistribution in the excitation spectra for the 2 1Σu+ state at high pressure was observed. The cause of this is explained in terms of state-dependent quenching.

  9. The separation of overlapping transitions in β-carotene with broadband 2D electronic spectroscopy

    NASA Astrophysics Data System (ADS)

    Calhoun, Tessa R.; Davis, Jeffrey A.; Graham, Matthew W.; Fleming, Graham R.

    2012-01-01

    Broadband 2D electronic spectroscopy is applied to β-carotene, revealing new insight into the excited state dynamics of carotenoids by exploring the full energetic range encompassing the S0→S2 and S1→S1n transitions at 77 K. Multiple signals are observed in the regime associated with the proposed S∗ state and isolated through separate analysis of rephasing and nonrephasing contributions. Peaks in rephasing pathways display dynamic lineshapes characteristic of coupling to high energy vibrational modes, and simulation with a simple model supports their assignment to impulsive stimulated Raman scattering. A signal persisting beyond 10 ps in the nonrephasing spectra is still under investigation.

  10. Transport studies in 2D transition metal dichalcogenides and black phosphorus.

    PubMed

    Du, Yuchen; Neal, Adam T; Zhou, Hong; Ye, Peide D

    2016-07-01

    Two-dimensional (2D) materials are a new family of materials with interesting physical properties, ranging from insulating hexagonal boron nitride, semiconducting or semi-metallic transition metal dichalcogenides, to gapless metallic graphene. In this review, we provide a brief discussion of transport studies in transition metal dichalcogenides, including both semiconducting and semi-metallic phases, as well as a discussion of the newly emerged narrow bandgap layered material, black phosphorus, in terms of its electrical and quantum transport properties at room and cryogenic temperatures. Ultra-thin layered channel materials with atomic layer thickness in the cross-plane direction, together with relatively high carrier mobility with appropriate passivation techniques, provide the promise for new scientific discoveries and broad device applications. PMID:27187790

  11. Enantiomeric Excess-Tuned 2D Structural Transition: From Heterochiral to Homochiral Supramolecular Assemblies.

    PubMed

    Li, Shu-Ying; Chen, Ting; Wang, Lin; Sun, Bing; Wang, Dong; Wan, Li-Jun

    2016-07-12

    Spontaneous resolution of enantiomers is an intriguing and important phenomenon in surface chirality studies. Herein, we report on a two-dimensional (2D) structural transition from the heterochiral to homochiral assembly tuned by changing the enantiomeric excess (ee) of enantiomers in the solution phase. Enantiomers cocrystallize as racemates on the surface when the ee of the R-enantiomer (or S-enantiomer) remains below a critical value, whereas chiral segregation is achieved, and globally homochiral surfaces composed of exclusively one enantiomer are obtained as the critical ee is exceeded. The heterochiral-homochiral transition is ascribed to the formation of energetically unfavored homochiral molecular dimers under the control of the majority-rules principle at high ee values. Such results present an intriguing phenomenon in chiral ordering at surfaces, promising a new enlightenment toward understanding chiral resolution and the evolution of chirality. PMID:27287273

  12. Transport studies in 2D transition metal dichalcogenides and black phosphorus

    NASA Astrophysics Data System (ADS)

    Du, Yuchen; Neal, Adam T.; Zhou, Hong; Ye, Peide D.

    2016-07-01

    Two-dimensional (2D) materials are a new family of materials with interesting physical properties, ranging from insulating hexagonal boron nitride, semiconducting or semi-metallic transition metal dichalcogenides, to gapless metallic graphene. In this review, we provide a brief discussion of transport studies in transition metal dichalcogenides, including both semiconducting and semi-metallic phases, as well as a discussion of the newly emerged narrow bandgap layered material, black phosphorus, in terms of its electrical and quantum transport properties at room and cryogenic temperatures. Ultra-thin layered channel materials with atomic layer thickness in the cross-plane direction, together with relatively high carrier mobility with appropriate passivation techniques, provide the promise for new scientific discoveries and broad device applications.

  13. Interfractional trend analysis of dose differences based on 2D transit portal dosimetry

    NASA Astrophysics Data System (ADS)

    Persoon, L. C. G. G.; Nijsten, S. M. J. J. G.; Wilbrink, F. J.; Podesta, M.; Snaith, J. A. D.; Lustberg, T.; van Elmpt, W. J. C.; van Gils, F.; Verhaegen, F.

    2012-10-01

    Dose delivery of a radiotherapy treatment can be influenced by a number of factors. It has been demonstrated that the electronic portal imaging device (EPID) is valuable for transit portal dosimetry verification. Patient related dose differences can emerge at any time during treatment and can be categorized in two types: (1) systematic—appearing repeatedly, (2) random—appearing sporadically during treatment. The aim of this study is to investigate how systematic and random information appears in 2D transit dose distributions measured in the EPID plane over the entire course of a treatment and how this information can be used to examine interfractional trends, building toward a methodology to support adaptive radiotherapy. To create a trend overview of the interfractional changes in transit dose, the predicted portal dose for the different beams is compared to a measured portal dose using a γ evaluation. For each beam of the delivered fraction, information is extracted from the γ images to differentiate systematic from random dose delivery errors. From the systematic differences of a fraction for a projected anatomical structures, several metrics are extracted like percentage pixels with |γ| > 1. We demonstrate for four example cases the trends and dose difference causes which can be detected with this method. Two sample prostate cases show the occurrence of a random and systematic difference and identify the organ that causes the difference. In a lung cancer case a trend is shown of a rapidly diminishing atelectasis (lung fluid) during the course of treatment, which was detected with this trend analysis method. The final example is a breast cancer case where we show the influence of set-up differences on the 2D transit dose. A method is presented based on 2D portal transit dosimetry to record dose changes throughout the course of treatment, and to allow trend analysis of dose discrepancies. We show in example cases that this method can identify the causes of

  14. Detection of 2D phase transitions at the electrode/electrolyte interface using electrochemical impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Tymoczko, Jakub; Colic, Viktor; Bandarenka, Aliaksandr S.; Schuhmann, Wolfgang

    2015-01-01

    The capacitance of the electric double layer, CDL, formed at the electrode/electrolyte interface is generally determined by electrochemical impedance spectroscopy (EIS). However, CDL values obtained using EIS data often depend on the ac frequency of the potential perturbation used in EIS. The reasons for the observed frequency dispersions can be various, and hence extracting valuable information about the status of the electrified interface is not possible with the required certainty. In this work, using well-understood electrochemical systems, namely Pt(111) electrodes in contact with a series of acidic sulfate ions containing electrolytes, we provide strong evidence that 2D phase transitions in the adsorbate layers and, in general, structural effects at the electrode/electrolyte interface are in many cases responsible for the frequency dispersion of the double layer capacitance. These empirical findings open new opportunities for the detection and evaluation of 2D phase transition processes and other structural effects using EIS, even in presence of simultaneously occurring electrochemical processes. However, further theoretical elaboration of this effect is necessary.

  15. Observation of 2D Ising criticality of liquid-gas transition by the flowgram method

    NASA Astrophysics Data System (ADS)

    Yarmolinsky, Max; Kuklov, Anatoly

    We study the critical properties of the transition in 2D liquid-gas system with the square-well potential interaction by Monte Carlo simulations in the grand canonical ensemble. Due to lack of the underlying Ising symmetry, the analysis cannot be done reliably by the standard methods applicable to lattice systems. In contrast, the analysis based on the flowgram method allowed us to find the critical point to significantly higher (and controllable) accuracy than in previous studies by other authors. Simulations were performed in a progression of sizes L up to size L = 84 , with the particle numbers varying over 3 orders of magnitude and the subcritical behavior not extending beyond L = 10 - 15 . The finite size scaling analysis of the critical exponents and their ratio, μ and γ / ν , gives values consistent with the 2D Ising universality class within 1-2% of errors. Our result essentially closes proposals that the nature of the liquid-gas transition might be different from the Ising model in systems with short-range interactions. This work was supported by the NSF Grant PHY1314469.

  16. Shape-controlled percolation transition in 2D random packing of asymmetric dimers

    NASA Astrophysics Data System (ADS)

    Han, Youngkyu; Lee, Juncheol; Choi, Siyoung Q.; Choi, Myung Chul; Kim, Mahn Won

    2015-03-01

    In this paper, we report on an experimental investigation of a shape-controlled percolation transition in two-dimensional (2D) amorphous packing of dimers without long-range order. In the maximally random jammed (MRJ) packing of asymmetric dimers consisting of head and body, a dramatic increase in the connectivity of heads upon increasing the head-to-body size ratio γ leads to a percolation transition of the heads at the well-defined percolation threshold. In comparison with binary disks, the existence of a bond in dimers causes the heads to be homogeneously distributed over a system by inhibiting the local segregation. Interestingly, we found, however, that the cluster structure at the percolation threshold is insensitive to the bond, even though the existence of the bonds affects the percolation threshold as well as the head distribution. The fractal dimensions at the percolation threshold obey the universal law of the 2D percolation theory independently of the existence of bonds. Our finding can provide us with a new perspective of interesting applications of randomly assembled binary composites by using the homogeneous particle distribution and the sensitively tunable connectivity under particle shape control.

  17. Suppression of the metal-insulator transition by magnetic field in (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} (y = 0.0625)

    SciTech Connect

    Naito, Tomoyuki Fujishiro, Hiroyuki; Nishizaki, Terukazu; Kobayashi, Norio; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2014-06-21

    The (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} compound (y = 0.0625, T{sub MI-SS}=40 K), at the lower limit for occurrence of the first-order metal-insulator (MI) and simultaneous spin-state (SS) transitions, has been studied using electrical resistivity and magnetization measurements in magnetic fields up to 17 T. The isothermal experiments demonstrate that the low-temperature insulating phase can be destabilized by an applied field and the metallic phase returns well below the transition temperature T{sub MI-SS}. The reverse process with decreasing field occurs with a significant hysteresis. The temperature scans taken at fixed magnetic fields reveal a parabolic-like decrease in T{sub MI-SS} with increasing field strength and a complete suppression of the MI-SS transition in fields above 9 T.

  18. Control of electronic properties of 2D carbides (MXenes) by manipulating their transition metal layers

    DOE PAGES

    Anasori, Babak; Shi, Chenyang; Moon, Eun Ju; Xie, Yu; Voigt, Cooper A.; Kent, Paul R. C.; May, Steven J.; Billinge, Simon J. L.; Barsoum, Michel W.; Gogotsi, Yury

    2016-02-24

    In this paper, a transition from metallic to semiconducting-like behavior has been demonstrated in two-dimensional (2D) transition metal carbides by replacing titanium with molybdenum in the outer transition metal (M) layers of M3C2 and M4C3 MXenes. The MXene structure consists of n + 1 layers of near-close packed M layers with C or N occupying the octahedral site between them in an [MX]nM arrangement. Recently, two new families of ordered 2D double transition metal carbides MXenes were discovered, M'2M"C2 and M'2M"2C3 – where M' and M" are two different early transition metals, such as Mo, Cr, Ta, Nb, V, andmore » Ti. The M' atoms only occupy the outer layers and the M" atoms fill the middle layers. In other words, M' atomic layers sandwich the middle M"–C layers. Using X-ray atomic pair distribution function (PDF) analysis on Mo2TiC2 and Mo2Ti2C3 MXenes, we present the first quantitative analysis of structures of these novel materials and experimentally confirm that Mo atoms are in the outer layers of the [MC]nM structures. The electronic properties of these Mo-containing MXenes are compared with their Ti3C2 counterparts, and are found to be no longer metallic-like conductors; instead the resistance increases mildly with decreasing temperatures. Density functional theory (DFT) calculations suggest that OH terminated Mo–Ti MXenes are semiconductors with narrow band gaps. Measurements of the temperature dependencies of conductivities and magnetoresistances have confirmed that Mo2TiC2Tx exhibits semiconductor-like transport behavior, while Ti3C2Tx is a metal. Finally, this finding opens new avenues for the control of the electronic and optical applications of MXenes and for exploring new applications, in which semiconducting properties are required.« less

  19. Boundary Layer Control of Rotating Convection Systems: the Transition from 2D to 3D Turbulence

    NASA Astrophysics Data System (ADS)

    King, Eric; Stellmach, S.; Noir, J.; Hansen, U.; Aurnou, J.

    2008-09-01

    Recent studies have reproduced the patterns of zonal flow and thermal emission on the Giant Planets using deep convection models. For example, it has been shown that the fundamental differences between the winds of the Ice Giants, Uranus and Neptune, and the Gas Giants, Jupiter and Saturn, may be explained by the breakdown of the influence of rotation on convection. Here, we present results from a coupled suite of laboratory experiments and numerical simulations of rotating convection which span a broad range of parameter space. We observe distinct transitions from rotationally controlled, quasi-2D dynamics to strongly 3D, non-rotating style convection. We quantify the boundary between these two regimes as a function of the Rayleigh and Ekman numbers. The transition is not determined, as long assumed, by the convective Rossby number, but instead is controlled by boundary layer dynamics. It may then be easier than previously thought for convection systems to break free from the constraints of rotation. We are presently investigating how this transition correlates with zonal flows and magnetic field generation on the Giant Planets. Funding provided by NSF Geophysics Program (EAR/IF) and NASA Planetary Atmospheres Program.

  20. Dynamic Linkages Between the Transition Zone & Surface Plate Motions in 2D Models of Subduction

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2012-12-01

    Descending subducted slabs affect both plate tectonics at the surface and overall mantle flow (e.g. Conrad and Lithgow-Bertelloni, 2002). For time-dependent numerical models, the potential evolution of these slabs, ranging from immediate penetration into the lower mantle to prior buckling and stagnation, are affected by parameters such as the plate age, the viscosity jump into the lower mantle, the presence of phase transitions, trench motion and the chosen governing equation approximation (e.g. Billen and Hirth, 2007). Similarly, the overall deviatoric stress within the slab, especially where modified by the phase transitions, may explain the uneven distribution of deep earthquakes with depth (e.g. Bina, 1997). Better understanding of these processes may arise from a more realistic 2-D model that is fully-dynamic, with an overriding plate, freely-moving trench, compositionally-layered slab and seven major phase transitions, in addition to using the compressible (TALA) form of the governing equations. Though the thermodynamic parameters of certain phase transitions may be uncertain, this study aims to test the latest data and encourage further mineralogical research. We will present fully-dynamic models, which explore the importance of the phase transitions, especially those that have been previously excluded such as the wadsleyite to ringwoodite and the pyroxene and garnet phase transitions. These phase transitions, coupled with the modeled compositionally distinct crust, harzburgite, and pyrolite lithosphere layers, may produce new large-scale dynamic behavior not seen in past numerical models, as well as stress variations within the slab related to deep slab seismicity. Feedback from the compositionally complex slab to the dynamic trench may provide further insight on the mechanics of slab stagnation and behavior in the upper and lower mantle. Billen, M. I., and G. Hirth, Rheologic controls on slab dynamics, Geochemistry, Geophysics and Geosystems, 8 (Q08012

  1. Correlating Structural and Electronic Degrees of Freedom in 2D Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Tung, I.-Cheng; Zhang, Z.; Seyler, K. L.; Jones, A. M.; Clark, G.; Xiao, D.; Laanait, N.; Xu, X.; Wen, H.

    We have conducted a microscopic study of the interplay between structural and electronic degrees of freedom in two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers, multilayers and heterostructures. Using the recently developed full field x-ray reflection interface microscopy with the photoluminescence microscopic probe capability at the Advanced Photon Source, we demonstrated the x-ray reflection imaging of a monolayer 2D material for the first time. The structural variation across an exfoliated WSe2 monolayer is quantified by interlayer spacing relative to the crystal substrate and the smoothness of the layer. This structural information is correlated with the electronic properties of TMDs characterized by the in-situ photoluminescence measurements. This work is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-SC0012509. The use of Advanced Photon Source is supported by U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11357.

  2. Critical exponents of dynamical conductivity in 2D percolative superconductor-insulator transitions: three universality classes.

    PubMed

    Karki, Pragalv; Loh, Yen Lee

    2016-11-01

    We simulate three types of random inductor-capacitor (LC) networks on [Formula: see text] square lattices. We calculate the dynamical conductivity using an equation-of-motion method in which timestep error is eliminated and windowing error is minimized. We extract the critical exponent a such that [Formula: see text] at low frequencies. The results suggest that there are three different universality classes. The [Formula: see text] model, with capacitances from each site to ground, has a  =  0.314(4). The [Formula: see text] model, with capacitances along bonds, has a  =  0. The [Formula: see text] model, with both types of capacitances, has a  =  0.304(1). This implies that classical percolative 2D superconductor-insulator transitions (SITs) generically have [Formula: see text] as [Formula: see text]. Therefore, any experiments that give a constant conductivity as [Formula: see text] must be explained in terms of quantum effects.

  3. 2D Transition-Metal-Dichalcogenide-Nanosheet-Based Composites for Photocatalytic and Electrocatalytic Hydrogen Evolution Reactions.

    PubMed

    Lu, Qipeng; Yu, Yifu; Ma, Qinglang; Chen, Bo; Zhang, Hua

    2016-03-01

    Hydrogen (H2) is one of the most important clean and renewable energy sources for future energy sustainability. Nowadays, photocatalytic and electrocatalytic hydrogen evolution reactions (HERs) from water splitting are considered as two of the most efficient methods to convert sustainable energy to the clean energy carrier, H2. Catalysts based on transition metal dichalcogenides (TMDs) are recognized as greatly promising substitutes for noble-metal-based catalysts for HER. The photocatalytic and electrocatalytic activities of TMD nanosheets for the HER can be further improved after hybridization with many kinds of nanomaterials, such as metals, oxides, sulfides, and carbon materials, through different methods including the in situ reduction method, the hot-injection method, the heating-up method, the hydro(solvo)thermal method, chemical vapor deposition (CVD), and thermal annealing. Here, recent progress in photocatalytic and electrocatalytic HERs using 2D TMD-based composites as catalysts is discussed.

  4. Local electronic structures and 2D topological phase transition of ultrathin Sb films

    NASA Astrophysics Data System (ADS)

    Kim, Sunghwan; Jin, Kyung-Hwan; Park, Joonbum; Kim, Jun Sung; Jhi, Seung-Hoon; Yeom, Han Woong

    We investigate local electronic structures of ultrathin Sb islands and their edges grown on Bi2Te2Se by scanning tunneling microscopy/spectroscopy (STM/STS) and density functional theory (DFT) calculations. The Sb islands of various thickness are grown with atomically well ordered edge structure over the 3 bilayers (BL). On the surfaces and edges of these islands, we clearly resolve edge-localized electronic states by STS measurements, which depend on the thickness. The DFT calculations identify that the strongly localized edge states of 4 and 5 BL films correspond to a quantum spin Hall (QSH) states while the edge states of 3 BL are trivial. Our experimental and theoretical results confirm the 2D topological phase transition of the ultrathin Sb films from trivial to QSH phase. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science and Department of Physics, Pohang University of Science and Technology, Korea.

  5. Superfluid Onset and 2D phase transitions of Helium-4 on Lithium and Sodium

    NASA Astrophysics Data System (ADS)

    Velasco, Angel; Huisman, Fawn; van Cleve, Eli; Taborek, Peter

    2012-02-01

    We have fabricated lithium and sodium films on quartz crystal microbalances (QCM) using in situ low temperature pulsed laser deposition. The frequency shift and dissipation of the QCM was measured as a function of helium pressure and chemical potential and used to construct the phase diagram of helium films on these substrates. Pressure measurement techniques based on an RGA mass spectrometer, which provides accurate measurement below 10-8 Torr will be described. Lithium and sodium are predicted to be intermediate strength substrates which are strong enough to be wetted by He-4 but weak enough that solid-like layers do not form, so they are candidates for observing sub-monolayer superfluidity in direct contact with a metallic surface. Helium adsorption isotherms and quenches between 0.5K and 1.6K on both lithium and sodium indicated continuous, sub-monolayer helium film growth and superfluid onsets in sub-monolayer films. Features below 1K indicate a collision between a classical 2D liquid/vapor phase transition and the Kosterlitz-Thouless superfluid phase transition. We see no evidence for the pre-wetting step instability predicted for helium on sodium.

  6. Imaging geological contact utilizing 2D resistivity method for light rail transit (LRT) track alignment

    NASA Astrophysics Data System (ADS)

    Ali, Nisa'; Saad, Rosli; Muztaza, Nordiana M.; Ismail, Noer E. H.

    2013-05-01

    The purpose of this study was to locate the geological contact using 2D resistivity method for Light Rail Transit (LRT) track alignment. The resistivity method was conducted on eight survey lines with the length of line 1 was 600m. The length of line 2, 3, 4, 5, 6, and 7 were 200m each while line 8 is 115m. All the survey used minimum electrode spacing of 5m and using Pole-dipole array with minimum current is 2mA and maximum was 20mA. The result obtained from the pseudosection showed that the area generally divided into three main zones, fill materials/residual soil with a resistivity value of <500 Ωm, saturated zone with a resistivity value of 30-100 Ωm and bedrock with a resistivity value of >2000 Ωm. Three fractured zones were detected along line L1 and a lot of boulders were detected at L1, L3, L4, L5 and L6. The geological contact was between the residual soil and granite bedrock.

  7. Critical exponents of dynamical conductivity in 2D percolative superconductor-insulator transitions: three universality classes

    NASA Astrophysics Data System (ADS)

    Karki, Pragalv; Loh, Yen Lee

    2016-11-01

    We simulate three types of random inductor-capacitor (LC) networks on 6000× 6000 square lattices. We calculate the dynamical conductivity using an equation-of-motion method in which timestep error is eliminated and windowing error is minimized. We extract the critical exponent a such that σ ≤ft(ω \\right)\\propto {ω-a} at low frequencies. The results suggest that there are three different universality classes. The {{L}ij}{{C}i} model, with capacitances from each site to ground, has a  =  0.314(4). The {{L}ij}{{C}ij} model, with capacitances along bonds, has a  =  0. The {{L}ij}{{C}i}{{C}ij} model, with both types of capacitances, has a  =  0.304(1). This implies that classical percolative 2D superconductor-insulator transitions (SITs) generically have σ ≤ft(ω \\right)\\to ∞ as ω \\to 0 . Therefore, any experiments that give a constant conductivity as ω \\to 0 must be explained in terms of quantum effects.

  8. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  9. Nonpercolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1 -xCaxMnO3

    NASA Astrophysics Data System (ADS)

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-01

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x =0.18 ,0.22 ). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS˜720 K. The study utilized explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1 -xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ˜1 nm with observably smaller distortions. In the x =0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ˜1050 K), where they are crystallographically prohibited. Their magnitude and subnanometer spatial extent remain unchanged.

  10. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  11. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    DOE PAGES

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilizedmore » explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  12. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-01

    The layered compound BaCo1-xNixS2-y (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (˜40 K) and large volume change (˜0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo1-xNixS2-y (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  13. Generalized Mechanistic Model for the Chemical Vapor Deposition of 2D Transition Metal Dichalcogenide Monolayers.

    PubMed

    Govind Rajan, Ananth; Warner, Jamie H; Blankschtein, Daniel; Strano, Michael S

    2016-04-26

    Transition metal dichalcogenides (TMDs) like molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are layered materials capable of growth to one monolayer thickness via chemical vapor deposition (CVD). Such CVD methods, while powerful, are notoriously difficult to extend across different reactor types and conditions, with subtle variations often confounding reproducibility, particularly for 2D TMD growth. In this work, we formulate the first generalized TMD synthetic theory by constructing a thermodynamic and kinetic growth mechanism linked to CVD reactor parameters that is predictive of specific geometric shape, size, and aspect ratio from triangular to hexagonal growth, depending on specific CVD reactor conditions. We validate our model using experimental data from Wang et al. (Chem. Mater. 2014, 26, 6371-6379) that demonstrate the systemic evolution of MoS2 morphology down the length of a flow CVD reactor where variations in gas phase concentrations can be accurately estimated using a transport model (CSulfur = 9-965 μmol/m(3); CMoO3 = 15-16 mmol/m(3)) under otherwise isothermal conditions (700 °C). A stochastic model which utilizes a site-dependent activation energy barrier based on the intrinsic TMD bond energies and a series of Evans-Polanyi relations leads to remarkable, quantitative agreement with both shape and size evolution along the reactor. The model is shown to extend to the growth of WS2 at 800 °C and MoS2 under varied process conditions. Finally, a simplified theory is developed to translate the model into a "kinetic phase diagram" of the growth process. The predictive capability of this model and its extension to other TMD systems promise to significantly increase the controlled synthesis of such materials. PMID:26937889

  14. Measurements of Thermal Conductivity of Superfluid Helium Near its Transition Temperature T(sub lambda) in a 2D Confinement

    NASA Technical Reports Server (NTRS)

    Jerebets, Sergei

    2004-01-01

    We report our recent experiments on thermal conductivity measurements of superfluid He-4 near its phase transition in a two-dimensional (2D) confinement under saturated vapor pressure. A 2D confinement is created by 2-mm- and 1-mm-thick glass capillary plates, consisting of densely populated parallel microchannels with cross-sections of 5 x 50 and 1 x 10 microns, correspondingly. A heat current (2 < Q < 400 nW/sq cm) was applied along the channels long direction. High-resolution measurements were provided by DC SQUID-based high-resolution paramagnetic salt thermometers (HRTs) with a nanokelvin resolution. We might find that thermal conductivity of confined helium is finite at the bulk superfluid transition temperature. Our 2D results will be compared with those in a bulk and 1D confinement.

  15. Uniaxial pressure effect of Metal-Insulator Transition (TMI) in oriented Sm0.55(Sr0.5Ca0.5)0.45MnO3

    NASA Astrophysics Data System (ADS)

    Arumugam, Sonachalam; Mohan Radheep, D.; Sarkar, P.; Mandal, P.; Arumugam Team; Prabhat Mandal Collaboration

    2013-06-01

    Perovskite type manganites R1 - xAxMnO3 (R: rare earth ions, A: alkaline earth ions) exhibit various fundamental phenomena like colossal magnetoresistance (CMR), phase separation, and first-order ferromagnetic (FM) to paramagnetic (PM) phase transition etc. Similar to CMR, piezoresistance (PR), the change in electrical resistance in response to external pressure, can also be important parameter for various technological applications. Several studies shows that the order of phase transition can be changed either by applying external perturbations like magnetic field, pressure (P) , etc. or internally like doping etc. SSCMO single crystal was grown using floating zone technique and the quality was carefully checked and aligned along the c axis as well as ab-plane. We have investigated the effect of uniaxial pressure (P) on electrical resistivity along the ab-plane and c - axis in a single crystal of SSCMO. A huge PR ~107 % at P = 90 MPa and a remarkable increase (~79 K/GPa) of TMI have been observed with the application of P || c - axis, while TMI decreases at the rate of ~77 K/GPa for P⊥ c axis. These values of PR and dTMI /dP are much larger than those observed in other perovskite and bilayer manganites. Hence, these materials may be used for various technological applications. The authors SA and DMR wishes to thank DST, UGC and CSIR-SRF scheme (India) for the financial support to carry out the research work.

  16. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhan, J. M.; Li, P. G.; Liu, H.; Tao, S. L.; Ma, H.; Shen, J. Q.; Pan, M. J.; Zhang, Z. J.; Wang, S. L.; Yuan, G. L.

    2016-04-01

    La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

  17. Analytical description of 2D magnetic Freedericksz transition in a rectangular cell of a nematic liquid crystal.

    PubMed

    Burylov, S V; Zakhlevnykh, A N

    2016-06-01

    We study the Freedericksz transition induced by a magnetic field in a rectangular cell filled with a nematic liquid crystal. In the initial state the director of the nematic liquid crystal is uniformly aligned in the cross section plane of the cell with rigid anchoring of the director at cell walls: planar on the top and bottom walls, and homeotropic on the left and right ones. The magnetic field is directed perpendicular to the cell cross section plane. We consider two-dimensional (2D) orientational deformations of the nematic liquid crystal in the rectangular cell and determine the critical value of the Freedericksz transition field above which these orientational deformations occur. The 2D expression for the director alignment profile above the threshold of Freedericksz transition is analytically found and the profile shapes as functions of cell sizes, values of the Frank elastic constants of the nematic liquid crystal and the magnetic field are studied. PMID:27349554

  18. On the 2D-transition, hysteresis and thermodynamic equilibrium of Kr adsorption on a graphite surface.

    PubMed

    Diao, Rui; Fan, Chunyan; Do, D D; Nicholson, D

    2015-12-15

    The adsorption and desorption of Kr on graphite at temperatures in the range 60-88K, was systematically investigated using a combination of several simulation techniques including: Grand Canonical Monte Carlo (GCMC), Canonical kinetic-Monte Carlo (C-kMC) and the Mid-Density Scheme (MDS). Particular emphasis was placed on the gas-solid, gas-liquid and liquid-solid 2D phase transitions. For temperatures below the bulk triple point, the transition from a 2D-liquid-like monolayer to a 2D-solid-like state is manifested as a sub-step in the isotherm. A further increase in the chemical potential leads to another rearrangement of the 2D-solid-like state from a disordered structure to an ordered structure that is signalled by (1) another sub-step in the monolayer region and (2) a spike in the plot of the isosteric heat versus density at loadings close to the dense monolayer coverage concentration. Whenever a 2D transition occurs in a grand canonical isotherm it is always associated with a hysteresis, a feature that is not widely recognised in the literature. We studied in details this hysteresis with the analysis of the canonical isotherm, obtained with C-kMC, which exhibits a van der Waals (vdW) type loop with a vertical segment in the middle. We complemented the hysteresis loop and the vdW curve with the analysis of the equilibrium transition obtained with the MDS, and found that the equilibrium transition coincides exactly with the vertical segment of the C-kMC isotherm, indicating the co-existence of two phases at equilibrium. We also analysed adsorption at higher layers and found that the 2D-coexistence is also observed, provided that the temperature is well below the triple point. Finally the 2D-critical temperatures were obtained for the first three layers and they are in good agreement with the experimental data in the literature.

  19. On the 2D-transition, hysteresis and thermodynamic equilibrium of Kr adsorption on a graphite surface.

    PubMed

    Diao, Rui; Fan, Chunyan; Do, D D; Nicholson, D

    2015-12-15

    The adsorption and desorption of Kr on graphite at temperatures in the range 60-88K, was systematically investigated using a combination of several simulation techniques including: Grand Canonical Monte Carlo (GCMC), Canonical kinetic-Monte Carlo (C-kMC) and the Mid-Density Scheme (MDS). Particular emphasis was placed on the gas-solid, gas-liquid and liquid-solid 2D phase transitions. For temperatures below the bulk triple point, the transition from a 2D-liquid-like monolayer to a 2D-solid-like state is manifested as a sub-step in the isotherm. A further increase in the chemical potential leads to another rearrangement of the 2D-solid-like state from a disordered structure to an ordered structure that is signalled by (1) another sub-step in the monolayer region and (2) a spike in the plot of the isosteric heat versus density at loadings close to the dense monolayer coverage concentration. Whenever a 2D transition occurs in a grand canonical isotherm it is always associated with a hysteresis, a feature that is not widely recognised in the literature. We studied in details this hysteresis with the analysis of the canonical isotherm, obtained with C-kMC, which exhibits a van der Waals (vdW) type loop with a vertical segment in the middle. We complemented the hysteresis loop and the vdW curve with the analysis of the equilibrium transition obtained with the MDS, and found that the equilibrium transition coincides exactly with the vertical segment of the C-kMC isotherm, indicating the co-existence of two phases at equilibrium. We also analysed adsorption at higher layers and found that the 2D-coexistence is also observed, provided that the temperature is well below the triple point. Finally the 2D-critical temperatures were obtained for the first three layers and they are in good agreement with the experimental data in the literature. PMID:26364074

  20. Quantum Diffusion on Molecular Tubes: Universal Scaling of the 1D to 2D Transition

    NASA Astrophysics Data System (ADS)

    Chuang, Chern; Lee, Chee Kong; Moix, Jeremy M.; Knoester, Jasper; Cao, Jianshu

    2016-05-01

    The transport properties of disordered systems are known to depend critically on dimensionality. We study the diffusion coefficient of a quantum particle confined to a lattice on the surface of a tube, where it scales between the 1D and 2D limits. It is found that the scaling relation is universal and independent of the temperature, disorder, and noise parameters, and the essential order parameter is the ratio between the localization length in 2D and the circumference of the tube. Phenomenological and quantitative expressions for transport properties as functions of disorder and noise are obtained and applied to real systems: In the natural chlorosomes found in light-harvesting bacteria the exciton transfer dynamics is predicted to be in the 2D limit, whereas a family of synthetic molecular aggregates is found to be in the homogeneous limit and is independent of dimensionality.

  1. Quantum Diffusion on Molecular Tubes: Universal Scaling of the 1D to 2D Transition.

    PubMed

    Chuang, Chern; Lee, Chee Kong; Moix, Jeremy M; Knoester, Jasper; Cao, Jianshu

    2016-05-13

    The transport properties of disordered systems are known to depend critically on dimensionality. We study the diffusion coefficient of a quantum particle confined to a lattice on the surface of a tube, where it scales between the 1D and 2D limits. It is found that the scaling relation is universal and independent of the temperature, disorder, and noise parameters, and the essential order parameter is the ratio between the localization length in 2D and the circumference of the tube. Phenomenological and quantitative expressions for transport properties as functions of disorder and noise are obtained and applied to real systems: In the natural chlorosomes found in light-harvesting bacteria the exciton transfer dynamics is predicted to be in the 2D limit, whereas a family of synthetic molecular aggregates is found to be in the homogeneous limit and is independent of dimensionality. PMID:27232033

  2. Mott metal-insulator transition on compressible lattices.

    PubMed

    Zacharias, Mario; Bartosch, Lorenz; Garst, Markus

    2012-10-26

    The critical properties of the finite temperature Mott end point are drastically altered by a coupling to crystal elasticity, i.e., whenever it is amenable to pressure tuning. Similar as for critical piezoelectric ferroelectrics, the Ising criticality of the electronic system is preempted by an isostructural instability, and long-range shear forces suppress microscopic fluctuations. As a result, the end point is governed by Landau criticality. Its hallmark is, thus, a breakdown of Hooke's law of elasticity with a nonlinear strain-stress relation characterized by a mean-field exponent. Based on a quantitative estimate, we predict critical elasticity to dominate the temperature range ΔT*/T(c)≃8%, close to the Mott end point of κ-(BEDT-TTF)(2)X. PMID:23215206

  3. Simulation of multi-steps thermal transition in 2D spin-crossover nanoparticles

    NASA Astrophysics Data System (ADS)

    Jureschi, Catalin-Maricel; Pottier, Benjamin-Louis; Linares, Jorge; Richard Dahoo, Pierre; Alayli, Yasser; Rotaru, Aurelian

    2016-04-01

    We have used an Ising like model to study the thermal behavior of a 2D spin crossover (SCO) system embedded in a matrix. The interaction parameter between edge SCO molecules and its local environment was included in the standard Ising like model as an additional term. The influence of the system's size and the ratio between the number of edge molecules and the other molecules were also discussed.

  4. Low-voltage current noise in long quantum superconductor/insulator/normal-metal/insulator/superconductor junctions.

    SciTech Connect

    Kopnin, N. B.; Galperin, Y. M.; Vinokur, V.; Materials Science Division; Helsinki Univ. Tech.; L.D. Landau Inst. for Theoretical Physics; Univ. Oslo; A.F. Ioffe Physico-Tech. Inst. of Russian Academy of Sciences

    2007-01-01

    The current noise in long superconductor/insulator/normal-metal/insulator/superconductor junctions at low temperatures is sensitive to the population of the subgap states, which is far from equilibrium even at low bias voltages. A nonequilibrium distribution is established due to an interplay between voltage-driven interlevel Landau-Zener transitions and intralevel inelastic relaxation. The Fano factor (the ratio of the zero-frequency noise to the dc current) is enhanced drastically, being proportional to the number of times which a particle flies along the Andreev trajectory before it escapes from the level due to inelastic scattering. For weak Landau-Zener transitions, the enhancement is even larger due to a smaller dc current.

  5. SU-E-T-05: A 2D EPID Transit Dosimetry Model Based On An Empirical Quadratic Formalism

    SciTech Connect

    Tan, Y; Metwaly, M; Glegg, M; Baggarley, S; Elliott, A

    2014-06-01

    Purpose: To describe a 2D electronic portal imaging device (EPID) transit dosimetry model, based on an empirical quadratic formalism, that can predict either EPID or in-phantom dose distribution for comparisons with EPID captured image or treatment planning system (TPS) dose respectively. Methods: A quadratic equation can be used to relate the reduction in intensity of an exit beam to the equivalent path length of the attenuator. The calibration involved deriving coefficients from a set of dose planes measured for homogeneous phantoms with known thicknesses under reference conditions. In this study, calibration dose planes were measured with EPID and ionisation chamber (IC) in water for the same reference beam (6MV, 100mu, 20×20cm{sup 2}) and set of thicknesses (0–30cm). Since the same calibration conditions were used, the EPID and IC measurements can be related through the quadratic equation. Consequently, EPID transit dose can be predicted from TPS exported dose planes and in-phantom dose can be predicted using EPID distribution captured during treatment as an input. The model was tested with 4 open fields, 6 wedge fields, and 7 IMRT fields on homogeneous and heterogeneous phantoms. Comparisons were done using 2D absolute gamma (3%/3mm) and results were validated against measurements with a commercial 2D array device. Results: The gamma pass rates for comparisons between EPID measured and predicted ranged from 93.6% to 100.0% for all fields and phantoms tested. Results from this study agreed with 2D array measurements to within 3.1%. Meanwhile, comparisons in-phantom between TPS computed and predicted ranged from 91.6% to 100.0%. Validation with 2D array device was not possible for inphantom comparisons. Conclusion: A 2D EPID transit dosimetry model for treatment verification was described and proven to be accurate. The model has the advantage of being generic and allows comparisons at the EPID plane as well as multiple planes in-phantom.

  6. Photocurrent measurements in Coupled Quantum Well van der Waals Heterostructures made of 2D Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Joe, Andrew; Jauregui, Luis; High, Alex; Dibos, Alan; Gulpinar, Elgin; Pistunova, Kateryna; Park, Hongkun; Kim, Philip

    , Luis A. Jauregui, Alex A. High, Alan Dibos, Elgin Gulpinar, Kateryna Pistunova, Hongkun Park, Philip Kim Harvard University, Physics Department -abstract- Single layer transition metal dichalcogenides (TMDC) are 2-dimensional (2D) semiconductors van der Waals (vdW) characterized by a direct optical bandgap in the visible wavelength (~2 eV). Characterization of the band alignment between TMDC and the barrier is important for the fabrication of tunneling devices. Here, we fabricate coupled quantum well (CQW) heterostructures made of 2D TMDCs with hexagonal Boron nitride (hBN) as an atomically thin barrier and gate dielectric and with top and bottom metal (or graphite) as gate electrodes. We observe a clear dependence of the photo-generated current with varying hBN thickness, electrode workfunctions, electric field, laser excitation power, excitation wavelength, and temperature. We will discuss the implication of photocurrent in relation to quantum transport process across the vdW interfaces.

  7. Spectroscopic Investigation of the Odd-Parity 3 d 2 D → nf 2 F Transitions of Neutral Sodium

    NASA Astrophysics Data System (ADS)

    Nadeem, A.; Shah, M.; Shahzada, S.; Ahmed, M.; Haq, S. U.

    2015-11-01

    We report new experimental data on term energies and effective quantum numbers of the odd parity Rydberg states of sodium in the 40687-41408 cm-1 energy range. The experiment was performed using a two-color scheme of three-photon laser excitation in conjunction with a thermionic diode ion detector. The new observation includes much extended nf 2 F (12 ≤ n ≤ 51) series excited from the 3 d 2 D intermediate state. In addition, oscillator strengths of the 3 d 2 D → nf 2 F (16 ≤ n ≤ 45) Rydberg transitions have been determined and a complete picture is presented from n = 4-45 incorporating the present work and earlier computed results.

  8. 2D transition-metal diselenides: phase segregation, electronic structure, and magnetism.

    PubMed

    Manchanda, Priyanka; Skomski, Ralph

    2016-02-17

    Density-functional theory is used to investigate the phase-segregation behavior of two-dimensional transition-metal dichalcogenides, which are of current interest as beyond-graphene materials for optoelectronic and spintronic applications. Our focus is on the behavior of W1-x V x Se2 monolayers, whose end members are semiconducting WSe2 and ferromagnetic VSe2. The energetics favors phase segregation, but the spinodal decomposition temperature is rather low, about 420 K. The addition of V leads to a transition from a nonmagnetic semiconductor to a metallic ferromagnet, with a ferromagnetic moment of about 1.0 μ B per V atom. The transition is caused by a p-type doping mechanism, which shifts the Fermi level into the valence band. The finite-temperature structure and magnetism of the diselenide systems are discussed in terms of Onsager-type critical fluctuations and Bruggeman effective-medium behavior.

  9. 2D transition-metal diselenides: phase segregation, electronic structure, and magnetism

    NASA Astrophysics Data System (ADS)

    Manchanda, Priyanka; Skomski, Ralph

    2016-02-01

    Density-functional theory is used to investigate the phase-segregation behavior of two-dimensional transition-metal dichalcogenides, which are of current interest as beyond-graphene materials for optoelectronic and spintronic applications. Our focus is on the behavior of W1-x V x Se2 monolayers, whose end members are semiconducting WSe2 and ferromagnetic VSe2. The energetics favors phase segregation, but the spinodal decomposition temperature is rather low, about 420 K. The addition of V leads to a transition from a nonmagnetic semiconductor to a metallic ferromagnet, with a ferromagnetic moment of about 1.0 μ B per V atom. The transition is caused by a p-type doping mechanism, which shifts the Fermi level into the valence band. The finite-temperature structure and magnetism of the diselenide systems are discussed in terms of Onsager-type critical fluctuations and Bruggeman effective-medium behavior.

  10. Enhanced rectifying response from metal-insulator-insulator-metal junctions

    NASA Astrophysics Data System (ADS)

    Maraghechi, P.; Foroughi-Abari, A.; Cadien, K.; Elezzabi, A. Y.

    2011-12-01

    We present on a metal-insulator-insulator-metal quantum electronic tunneling devices suitable for high speed rectifiers. Through the introduction of double oxide layer between similar metallic electrodes, a cascaded potential barrier is formed which alters the electron tunneling mechanism at forward versus the reverse bias. The cascaded potential barrier engineering manifests itself in both a highly nonlinear and asymmetric I-V junction characteristic. It is envisioned that high speed rectifiers and mixers having extraordinary nonlinearity can be realized through the incorporation of the cascaded potential barrier architecture and dissimilar metallic electrodes.

  11. Surface polaritons of a metal-insulator-metal curved slab

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2016-09-01

    The properties of s- and p-polarized surface polariton modes propagating circumferentially around a portion of a cylindrical metal-insulator-metal structure are studied, theoretically. By using the Maxwell equations in conjunction with the Drude model for the dielectric function of the metals and applying the appropriate boundary conditions, the dispersion relations of surface waves for two types of modes, are derived and numerically solved. The effects of the slab curvature and insulator thickness on the propagation of electromagnetic modes are investigated. The differences of the s- and p-polarized surface modes are also shown.

  12. Coalescence of drops in a 2D microchannel: critical transitions to autocatalytic behaviour.

    PubMed

    Danny Raj, M; Rengaswamy, Raghunathan

    2016-01-01

    A single coalescence event in a 2D concentrated emulsion in a microchannel can trigger an avalanche of similar events that can destabilize the entire assembly of drops. The sensitive dependence of the process on numerous parameters makes the propagation dynamics appear probabilistic. In this article, a stochastic simulation framework is proposed to understand this collective behavior in a system employing a large number of drops. We discover that the coalescence propagation dynamics exhibit a critical behavior where two outcomes are favored: no avalanche and large avalanches. Our analysis reveals that this behavior is a result of the inherent autocatalytic nature of the process. The effect of the aspect ratio of the drop assembly on the propagation dynamics is studied. We generate a parametric plot that shows the region of the parameter space where the propagation, averaged over the ensemble, is autocatalytic: where the possibility of near destabilization of the drop assembly appears. PMID:26439512

  13. Dynamic Linkages Between the Transition Zone & Surface Plate Motions in 2D Models of Subduction

    NASA Astrophysics Data System (ADS)

    Arredondo, K.; Billen, M. I.

    2013-12-01

    While slab pull is considered the dominant force controlling plate motion and speed, its magnitude is controlled by slab behavior in the mantle, where tomographic studies show a wide range of possibilities from direct penetration to folding, or stagnation directly above the lower mantle (e.g. Fukao et al., 2009). Geodynamic studies have investigated various parameters, such as plate age and two phase transitions, to recreate observed behavior (e.g. Běhounková and Cízková, 2008). However, past geodynamic models have left out known slab characteristics that may have a large impact on slab behavior and our understanding of subduction processes. Mineral experiments and seismic observations have indicated the existence of additional phase transitions in the mantle transition zone that may produce buoyancy forces large enough to affect the descent of a subducting slab (e.g. Ricard et al., 2005). The current study systematically tests different common assumptions used in geodynamic models: kinematic versus free-slip boundary conditions, the effects of adiabatic heating, viscous dissipation and latent heat, compositional layering and a more complete suite of phase transitions. Final models have a complete energy equation, with eclogite, harzburgite and pyrolite lithosphere compositional layers, and seven composition-dependent phase transitions within the olivine, pyroxene and garnet polymorph minerals. Results show important feedback loops between different assumptions and new behavior from the most complete models. Kinematic models show slab weakening or breaking above the 660 km boundary and between compositional layers. The behavior in dynamic models with a free-moving trench and overriding plate is compared to the more commonly found kinematic models. The new behavior may have important implications for the depth distribution of deep earthquakes within the slab. Though the thermodynamic parameters of certain phase transitions may be uncertain, their presence and

  14. Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

    SciTech Connect

    Chaudhuri, S.; Maasilta, I. J.

    2014-03-24

    We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

  15. Mid-infrared intersubband polaritons in dispersive metal-insulator-metal resonators

    SciTech Connect

    Manceau, J.-M. Ongarello, T.; Colombelli, R.; Zanotto, S.; Sorba, L.; Tredicucci, A.; Biasiol, G.

    2014-08-25

    We demonstrate room-temperature strong coupling between a mid-infrared (λ = 9.9 μm) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k = 0 where—potentially—polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and—simultaneously—to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the strong critical coupling concept is highlighted.

  16. Metal-insulator quantum critical point beneath the high Tc superconducting dome

    PubMed Central

    Sebastian, Suchitra E.; Harrison, N.; Altarawneh, M. M.; Mielke, C. H.; Liang, Ruixing; Bonn, D. A.; Lonzarich, G. G.; Hardy, W. N.

    2010-01-01

    An enduring question in correlated systems concerns whether superconductivity is favored at a quantum critical point (QCP) characterized by a divergent quasiparticle effective mass. Despite such a scenario being widely postulated in high Tc cuprates and invoked to explain non-Fermi liquid transport signatures, experimental evidence is lacking for a critical divergence under the superconducting dome. We use ultrastrong magnetic fields to measure quantum oscillations in underdoped YBa2Cu3O6+x, revealing a dramatic doping-dependent upturn in quasiparticle effective mass at a critical metal-insulator transition beneath the superconducting dome. Given the location of this QCP under a plateau in Tc in addition to a postulated QCP at optimal doping, we discuss the intriguing possibility of two intersecting superconducting subdomes, each centered at a critical Fermi surface instability. PMID:20304800

  17. High resolution spectroscopy of the Cs2 D 1Sigma u + -X 1Sigma g + transition and hyperfine structure

    NASA Astrophysics Data System (ADS)

    Kobayashi, Tooru; Usui, Takashi; Kumauchi, Takahiro; Baba, Masaaki; Ishikawa, Kiyoshi; Katô, Hajime

    1993-02-01

    The Doppler-free high resolution laser spectroscopy of Cs2 D 1Σu+-X 1Σg+ transition is extended up to v'=65. By comparing the spectral linewidth and the time-resolved fluorescence intensity, the line broadening observed for transitions to the D 1Σu+(v'=63,J'≤70) levels is identified as the lifetime broadening originating from the predissociation. Line splittings are observed for the D 1Σu+(v'=46,J'≥95)-X 1Σg+(v`= 1,J`) transitions and are identified as the hyperfine splitting due to a magnetic dipole interaction between nuclear spin and electron. The hyperfine splitting is attributed to mixing of the (2) 3Πu state, whose wave function changes from Hund's case (a) to case (b) at large J. The dependence of the electric dipole transition moment on the internuclear distance for the D 1Σu+-X 1Σg+ transition is determined by comparing the observed and calculated line intensities of the dispersed fluorescence.

  18. Theoretical study of surface plasmons coupling in transition metallic alloy 2D binary grating

    NASA Astrophysics Data System (ADS)

    Dhibi, Abdelhak; Khemiri, Mehdi; Oumezzine, Mohamed

    2016-05-01

    The excitation of a surface plasmon polariton (SPP) wave on a metal-air interface by a 2D diffraction grating is numerically investigated. The grating consists of homogeneous alloys of two metals of a formula AxB1-x, or three metals of a formula AxByCz, where A, B and C could be silver (Ag), copper (Cu), gold (Au) or aluminum (Al). It is observed that all the alloys of two metals present a very small change of surface plasmon resonance (SPR) irrespective of composition x. Moreover, the addition of 25% of Al to two metals alloy is insufficient to change the SPR curves. The influence of the different grating parameters is discussed in details using rigorous coupled-wave analysis (RCWA) method. Furthermore, the SPR is highly dependent on grating periods (dx and dy) and the height of the grating h. The results reveal that dx= dy= 700 nm, h=40 nm and duty cycle w=0.5 are the optimal parameters for exciting SPP.

  19. Four divalent transition metal carboxyarylphosphonate compounds: Hydrothermal synthesis, structural chemistry and generalized 2D FTIR correlation spectroscopy studies

    NASA Astrophysics Data System (ADS)

    Lei, Ran; Chai, Xiaochuan; Mei, Hongxin; Zhang, Hanhui; Chen, Yiping; Sun, Yanqiong

    2010-07-01

    Four divalent transition metal carboxyarylphosphonates, [Ni(4,4'-bipy)H 2L 1(HL 1) 2(H 2O) 2]·2H 2O 1, [Ni 2(4,4'-bipy)(L 2)(OH)(H 2O) 2]·3H 2O 2, Mn(phen) 2(H 2L 1) 23 and Mn(phen)(HL 2) 4 (H 3L 1= p-H 2O 3PCH 2-C 6H 4-COOH, H 3L 2= m-H 2O 3PCH 2-C 6H 4-COOH, 4,4'-bipy=4,4'-bipyridine, phen=1,10-phenanthroline) were synthesized under hydrothermal conditions. 1 features 1D linear chains built from Ni(II) ions bridging 4,4'-bipy. In 2, neighboring Ni 4 cluster units are connected by pairs of H 3L 2 ligands to form 1D double-crankshaft chains, which are interconnected by pairs of 4,4'-bipy into 2D sheets. 3 exhibits 2D supramolecular layers via the R 22(8) ringed hydrogen bonding units. 4 has 1D ladderlike chains, in which the 4-membered rings are cross-linked by the organic moieties of the H 3L 2 ligands. Additionally, 2D FTIR correlation analysis is applied with thermal and magnetic perturbation to clarify the structural changes of functional groups from H 3L 1 and H 3L 2 ligands in the compounds more efficiently.

  20. Dynamical scaling behavior during the phase transition of a 2D system with spatially periodic ground state

    NASA Astrophysics Data System (ADS)

    Hou, Qing; Goldenfeld, Nigel; Sasa, Shin-Ichi

    1996-03-01

    We study the kinetics of a phase transition in a 2D system quenched from a uniform state to one whose ground state is spatially periodic; examples include Rayleigh-Benard convection, isotropic-smectic and nematic-smectic transitions in liquid crystals and the Swift-Hohenberg model. Computer simulation(K.R. Elder, J. Vinals and M. Grant, Phys. Rev. A), 46, 7618 (1992). shows that dynamical scaling occurs; by exploring different models, we show that power law depends upon the presence of grain-boundaries (Q. Hou, N. Goldenfeld and S. Sasa, unpublished.) We measure the scaling exponents and give a scaling theory for their dependence on defect dynamics and bulk relaxation. Crossover phenomena corresponding to different physical mechanisms for pattern relaxation are also discussed.

  1. Potential energy landscapes for the 2D XY model: Minima, transition states, and pathways

    NASA Astrophysics Data System (ADS)

    Mehta, Dhagash; Hughes, Ciaran; Schröck, Mario; Wales, David J.

    2013-11-01

    We describe a numerical study of the potential energy landscape for the two-dimensional XY model (with no disorder), considering up to 100 spins and central processing unit and graphics processing unit implementations of local optimization, focusing on minima and saddles of index one (transition states). We examine both periodic and anti-periodic boundary conditions, and show that the number of stationary points located increases exponentially with increasing lattice size. The corresponding disconnectivity graphs exhibit funneled landscapes; the global minima are readily located because they exhibit relatively large basins of attraction compared to the higher energy minima as the lattice size increases.

  2. Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Xie, Lu; Cui, Xiaodong

    2016-04-01

    Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin-valley locking in monolayer WS2, and electrically detected by a lateral spin-valve structure with ferromagnetic contacts. The demonstrated long spin-valley lifetime, the unique valley-contrasted physics, and the spin-valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics.

  3. A novel 2-D transition metal cyanide membrane: Modeling, structural, magnetic, and functional characterization

    NASA Astrophysics Data System (ADS)

    Goss, Marcus

    A novel 2-dimensional crystalline material composed of cyanide-bridged metal nanosheets with a square planar framework has been prepared. This material, similar to Hofmann clathrates, has a variety of interesting properties. The material is crystalline and possesses characteristics that include magnetic properties, electronic properties and useful structural features. They have recently been exfoliated into individual crystalline sheets. These sheets show a strong potential for use as ion selective membranes. Performance improvements in water purification and desalination by reverse osmosis methods owing to their single atom thickness is possible. A series of dynamic molecular simulations has provided an understanding of the mechanism for water permeability and salt rejection. Energy profiles for the passage of water and ionic species through the porous areas of these nanosheets have been built and reported. Performance estimates of the efficacy of this novel material for use as an ion selective membrane such as an improved desalination RO membrane are presented. Experiments in synthesis and exfoliation of this class of cyanide-bridged transition metal complex were conducted and the results are presented. A preliminary investigation into the magnetic properties of these materials is included.

  4. 3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides.

    PubMed

    Guo, Yuzheng; Liu, Dameng; Robertson, John

    2015-11-25

    The transition metal dichalcogenides (TMDs) are two-dimensional layered solids with van der Waals bonding between layers. We calculate their Schottky barrier heights (SBHs) using supercell models and density functional theory. It is found that the SBHs without defects are quite strongly pinned, with a pinning factor S of about S = 0.3, a similar value for both top and edge contact geometries. This arises because there is direct bonding between the contact metal atoms and the TMD chalcogen atoms, for both top and edge contact geometries, despite the weak interlayer bonding in the isolated materials. The Schottky barriers largely follow the metal induced gap state (MIGS) model, like those of three-dimensional semiconductors, despite the bonding in the TMDs being largely constrained within the layers. The pinning energies are found to be lower in the gap for edge contact geometries than for top contact geometries, which might be used to obtain p-type contacts on MoS2.

  5. Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Cao, Jiang; Cresti, Alessandro; Esseni, David; Pala, Marco

    2016-02-01

    We simulate a band-to-band tunneling field-effect transistor based on a vertical heterojunction of single-layer MoS2 and WTe2, by exploiting the non-equilibrium Green's function method and including electron-phonon scattering. For both in-plane and out-of-plane transport, we attempt to calibrate out models to the few available experimental results. We focus on the role of chemical doping and back-gate biasing, and investigate the off-state physics of this device by analyzing the influence of the top-gate geometrical alignment on the device performance. The device scalability as a function of gate length is also studied. Finally, we present two metrics for the switching delay and energy of the device. Our simulations indicate that vertical field-effect transistors based on transition metal dichalcogenides can provide very small values of sub-threshold swing when properly designed in terms of doping concentration and top-gate extension length.

  6. Probing Magnetism in 2D Molecular Networks after in Situ Metalation by Transition Metal Atoms.

    PubMed

    Schouteden, K; Ivanova, Ts; Li, Z; Iancu, V; Janssens, E; Van Haesendonck, C

    2015-03-19

    Metalated molecules are the ideal building blocks for the bottom-up fabrication of, e.g., two-dimensional arrays of magnetic particles for spintronics applications. Compared to chemical synthesis, metalation after network formation by an atom beam can yield a higher degree of control and flexibility and allows for mixing of different types of magnetic atoms. We report on successful metalation of tetrapyridyl-porphyrins (TPyP) by Co and Cr atoms, as demonstrated by scanning tunneling microscopy experiments. For the metalation, large periodic networks formed by the TPyP molecules on a Ag(111) substrate are exposed in situ to an atom beam. Voltage-induced dehydrogenation experiments support the conclusion that the porphyrin macrocycle of the TPyP molecule incorporates one transition metal atom. The newly synthesized Co-TPyP and Cr-TPyP complexes exhibit striking differences in their electronic behavior, leading to a magnetic character for Cr-TPyP only as evidenced by Kondo resonance measurements.

  7. Four divalent transition metal carboxyarylphosphonate compounds: Hydrothermal synthesis, structural chemistry and generalized 2D FTIR correlation spectroscopy studies

    SciTech Connect

    Lei Ran; Chai Xiaochuan; Mei Hongxin; Zhang Hanhui; Chen Yiping; Sun Yanqiong

    2010-07-15

    Four divalent transition metal carboxyarylphosphonates, [Ni(4,4'-bipy)H{sub 2}L{sup 1}(HL{sup 1}){sub 2}(H{sub 2}O){sub 2}].2H{sub 2}O 1, [Ni{sub 2}(4,4'-bipy)(L{sup 2})(OH)(H{sub 2}O){sub 2}].3H{sub 2}O 2, Mn(phen){sub 2}(H{sub 2}L{sup 1}){sub 2}3 and Mn(phen)(HL{sup 2}) 4 (H{sub 3}L{sup 1}=p-H{sub 2}O{sub 3}PCH{sub 2}-C{sub 6}H{sub 4}-COOH, H{sub 3}L{sup 2}=m-H{sub 2}O{sub 3}PCH{sub 2}-C{sub 6}H{sub 4}-COOH, 4,4'-bipy=4,4'-bipyridine, phen=1,10-phenanthroline) were synthesized under hydrothermal conditions. 1 features 1D linear chains built from Ni(II) ions bridging 4,4'-bipy. In 2, neighboring Ni{sub 4} cluster units are connected by pairs of H{sub 3}L{sup 2} ligands to form 1D double-crankshaft chains, which are interconnected by pairs of 4,4'-bipy into 2D sheets. 3 exhibits 2D supramolecular layers via the R{sub 2}{sup 2}(8) ringed hydrogen bonding units. 4 has 1D ladderlike chains, in which the 4-membered rings are cross-linked by the organic moieties of the H{sub 3}L{sup 2} ligands. Additionally, 2D FTIR correlation analysis is applied with thermal and magnetic perturbation to clarify the structural changes of functional groups from H{sub 3}L{sup 1} and H{sub 3}L{sup 2} ligands in the compounds more efficiently. - Graphical abstract: A series of divalent transition metal carboxyarylphosphonate compounds were synthesized under hydrothermal conditions. The figure displays 2D sheet structure with large windows in compound 2.

  8. Metal-insulator crossover in multilayered MoS2.

    PubMed

    Park, Min Ji; Yi, Sum-Gyun; Kim, Joo Hyung; Yoo, Kyung-Hwa

    2015-10-01

    The temperature dependence of electrical transport properties was investigated for multilayered MoS2 field effect transistor devices with thicknesses of 3-22 nm. Some devices showed typical n-type semiconducting behavior, while others exhibited metal-insulator crossover (MIC) from metallic to insulating conduction at finite temperatures. The latter effect occurred near zero gate voltage or at high positive gate voltages. Analysis of Raman spectroscopy revealed the key difference that devices with MIC have a metallic 1T phase as well as a semiconducting 2H phase, whereas devices without the MIC did not have a metallic 1T phase. These results suggest that the metallic 1T phase may contribute to inducing the MIC.

  9. Electronic structure of a metal-insulator interface

    NASA Astrophysics Data System (ADS)

    Bordier, G.; Noguera, C.

    1991-07-01

    We present an analytical study of the electronic structure of a metal-insulator interface with special emphasis on the metal induced gap states (MIGS). It includes three steps: (i) a tight-binding approach of the dispersion relation and Green's function of insulators of NaCl or ZnS structure; (ii) a matching with free electron-like wavefunctions at the NaCl(100) or ZnS(110) surfaces, which yields the density and penetration depth of the MIGS as a function of the ionocovalent characteristics of the insulator and of the metal Fermi level; (iii) a self-consistent determination of the Fermi level position in a Thomas-Fermi approximation. The Schottky barrier height is derived under a simple analytic form and its dependence upon the metal work function is found in good agreement with experimental results.

  10. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    PubMed

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of < 115 ppm/V2 and a low leakage current density of 4.457 x 10(-11) A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor.

  11. Metal-insulator-metal waveguides for particle trapping and separation.

    PubMed

    Khan, Saara A; Chang, Chia-Ming; Zaidi, Zain; Shin, Wonseok; Shi, Yu; Ellerbee Bowden, Audrey K; Solgaard, Olav

    2016-06-21

    Optical particle trapping and separation are essential techniques in the fields of biology and chemistry. In many applications, it is important to identify passive separation techniques that only rely on intrinsic forces in a system with a fixed device geometry. We present a dual-waveguide sorter that utilizes the loss of metal-insulator-metal (MIM) waveguides for completely passive particle trapping and separation and is created using a unique angle sidewall deposition process. Our experiments show that an inner Au-Si3N4-Au waveguide is able to trap particles within the propagation distance of its dominant modes and release the particles into an outer Au-H2O-Au waveguide. The outer waveguide then propels the particles and separates them by size. The separation results are accurately modeled by a first-principles, analytical model.

  12. Graphene oxide-based flexible metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Bag, A.; Hota, M. K.; Mallik, S.; Maiti, C. K.

    2013-05-01

    This work explores the fabrication of graphene oxide (GO)-based metal-insulator-metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ˜4 fF µm-2 measured at 1 MHz and permittivity of ˜6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending.

  13. The Meandering-Braided River Pattern Transition Explained Empirically and with a 2D Morphodynamics Model

    NASA Astrophysics Data System (ADS)

    van den Berg, J. H.; Schuurman, F.; Kleinhans, M. G.; Lentink, H.

    2010-12-01

    Our objective is to understand general causes of different river channel patterns in unconfined alluvial plains. We discuss the principles and compare the performance of an empirical stream power-based classification and a physics-based bar pattern predictor. We present a careful selection of data from literature that contains rivers with discharge and median bed particle size ranging several orders of magnitude with various channel patterns and bar types, but no obvious eroding or aggrading tendency. Empirically a continuum of patterns is found for increasing specific stream power from single-thread, laterally immobile channels, meandering styles with scroll bars and with chute bars and moderately and highly braided channel patterns. Stream power is calculated with pattern-independent variables: mean annual flood, valley gradient and channel width predicted with a hydraulic geometry relation. `Thresholds', above which these patterns emerge, increase with bed sediment size. Linear bar theory predicts nature and presence of bars and bar mode, here converted to active braiding index. The most important variables are actual width-to-depth ratio and nonlinearity of bed sediment transport. Numerical modelling with the same equations as underlying the bar theory allow for nonlinear effects. We modelled hypothetical rivers over a large range of stream power and particle sizes with various choices for hydraulic roughness, sediment transport and transverse slope relations. Results agree well with the empirical diagram as well as empirical relations for bar and channel dimensions. Increasing potential specific stream power implies more energy to erode banks and indeed correlates to channels with high width-to-depth ratio. Bar theory and numerical modelling predict that such rivers develop more bars across the width (higher braiding index). At the transition from meandering to braiding weakly braided rivers and meandering rivers with chutes are found in nature and in the

  14. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  15. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

  16. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces.

    PubMed

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-01-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems. PMID:26658474

  17. Reconfiguration of a flexible fiber immersed in a 2D dense granular flow close to the jamming transition

    NASA Astrophysics Data System (ADS)

    Kolb, Evelyne; Algarra, Nicolas; Vandembroucq, Damien; Lazarus, Arnaud

    2015-11-01

    We propose a new fluid/structure interaction in the unusual case of a dense granular medium flowing against an elastic fibre acting as a flexible intruder. We experimentally studied the deflection of a mylar flexible beam clamped at one side, the other free side facing a 2D granular flow in a horizontal cell moving at a constant velocity. We investigated the reconfiguration of the fibre as a function of the fibre's rigidity and of the granular packing fraction close but below the jamming in 2D. Imposing the fibre geometry like its length or thickness sets the critical buckling force the fibre is able to resist if it was not supported by lateral grains, while increasing the granular packing fraction might laterally consolidate the fibre and prevent it from buckling. But on the other side, the approach to jamming transition by increasing the granular packing fraction will be characterized by a dramatically increasing size of the cluster of connected grains forming a solid block acting against the fibre, which might promote the fibre's deflection. Thus, we investigated the granular flow fields, the fibre's deflexion as well as the forces experienced by the fibre and compared them with theoretical predictions from elastica for different loadings along the fibre. PMMH, CNRS UMR 7636, UPMC, ESPCI-ParisTech, 10 rue Vauquelin, 75231 Paris Cedex 05, France.

  18. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces

    PubMed Central

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-01-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems. PMID:26658474

  19. 2D dynamical arrest transition in a mixed nanoparticle-phospholipid layer studied in real and momentum spaces

    NASA Astrophysics Data System (ADS)

    Orsi, Davide; Guzmán, Eduardo; Liggieri, Libero; Ravera, Francesca; Ruta, Beatrice; Chushkin, Yuriy; Rimoldi, Tiziano; Cristofolini, Luigi

    2015-12-01

    We investigate the interfacial dynamics of a 2D self-organized mixed layer made of silica nanoparticles interacting with phospholipid (DPPC) monolayers at the air/water interface. This system has biological relevance, allowing investigation of toxicological effects of nanoparticles on model membranes and lung surfactants. It might also provide bio-inspired technological solutions, exploiting the self-organization of DPPC to produce a non-trivial 2D structuration of nanoparticles. The characterization of interfacial dynamics yields information on the effects of NPs on the mechanical properties, important to improve performances of systems such as colloidosomes, foams, creams. For this, we combine micro-tracking in real-space with measurement in momentum-space via x-ray photon-correlation spectroscopy and Digital Fourier Microscopy. Using these complementary techniques, we extend the spatial range of investigation beyond the limits of each one. We find a dynamical transition from Brownian diffusion to an arrested state driven by compression, characterized by intermittent rearrangements, compatible with a repulsive glass phase. The rearrangement and relaxation of the monolayer structure results dramatically hindered by the presence of NPs, which is relevant to explain some the mechanical features observed for the dynamic surface pressure response of these systems and which can be relevant for the respiratory physiology and for future drug-delivery composite systems.

  20. Transition from 1D to 2D Laser-Induced Ultrasonic Wave Propagation in an Extended Plate

    NASA Astrophysics Data System (ADS)

    Laloš, Jernej; Požar, Tomaž; Možina, Janez

    2016-05-01

    Optodynamic interaction between a laser pulse and the surface of an opaque, solid elastic object produces transient waves that propagate and reverberate within the object. They can be, in general, categorized into three distinctive types which are all formed through different mechanisms: ablation-induced waves, light-pressure-induced waves, and thermoelastic waves. In this paper, out-of-plane displacements of such waves are simulated at the epicentral position on the opposite side of an extended plane-parallel elastic plate. Wave propagation is mathematically described by Green's transfer functions convolved with suitable time profiles of the incoming laser pulses. The simulated size of the circularly symmetric laser-illuminated area on the plate surface is varied to show the limit-to-limit transition of the displacement waveforms: from a 2D point source to an infinite 1D source.

  1. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides.

    PubMed

    Li, Yongtao; Wang, Yan; Huang, Le; Wang, Xiaoting; Li, Xingyun; Deng, Hui-Xiong; Wei, Zhongming; Li, Jingbo

    2016-06-22

    Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)electronics such as signal transmission and logic circuit, etc. Herein, we report the gate-tunable anti-ambipolar devices on the basis of few-layer transition metal dichalcogenides (TMDs) heterostructures to gain higher information storage density. Our study shows that carrier concentration regulated by the gate voltage plays a major role in the "anti-ambipolar" behavior, where the drain-source current can only pass through in specific range of gate voltage (Vg) and it will be restrained if the Vg goes beyond the range. Several improved strategies were theoretically discussed and experimentally adopted to obtain higher current on/off ratio for the anti-ambipolar devices, such as choosing suitable p-/n-pair, increasing carrier concentration by using thicker-layer TMDs, and so on. The modified SnS2/WSe2 device with the current on/off ratio exceeding 200 and on-state Vg ranging from -20 to 0 V was successfully achieved. On the basis of the anti-ambipolar field-effect transistors (FETs), we also reveal the potential of three-channel device unit for signal processing and information storage. With the equal quantity N of device units, 3(N) digital signals can be obtained from such three-channel devices, which are much larger than 2(N) ones obtained from traditional two-channel complementary metal oxide semiconductors (CMOS). PMID:27258569

  2. Lifetimes and Oscillator Strengths for Ultraviolet Transitions Involving 6s26d 2D and 6s6p3 2D Levels in Pb II

    NASA Astrophysics Data System (ADS)

    Federman, Steven Robert; Heidarian, Negar; Irving, Richard; Ritchey, Adam M.; Ellis, David; Cheng, Song; Curtis, Larry; Furman, Walter

    2016-06-01

    We conducted beam-foil measurements on levels producing Pb II lines at 1203.6 and 1433.9 Å. These were supplemented by archival data from the Hubble Space Telescope (HST) covering the Pb II transitions. The oscillator strengths derived from our experimental lifetimes are generally consistent with recent large-scale theoretical results, as well as our own relativistic calculations. Our analysis of the HST spectra confirms the relative strengths of the two lines. However, the oscillator strength obtained for the line at 1433 Å is significantly smaller than earlier theoretical values used to derive the interstellar lead abundance, leading to an increase of 0.43 dex in this quantity. We will present our results for Pb II and compare them with others from the literature.

  3. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO x

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Antonov, I. N.; Kasatkin, A. P.; Korolev, D. S.; Belov, A. I.; Mikhaylov, A. N.; Tetel'baum, D. I.

    2016-05-01

    The change of the immitance of the metal-insulator-metal memristive structures based on SiOx, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.

  4. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGES

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  5. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  6. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    PubMed Central

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang-Wook; Podzorov, Vitaly

    2014-01-01

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. Here we report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications. PMID:25308251

  7. 3D spin-flop transition in enhanced 2D layered structure single crystalline TlCo2Se2.

    PubMed

    Jin, Z; Xia, Z-C; Wei, M; Yang, J-H; Chen, B; Huang, S; Shang, C; Wu, H; Zhang, X-X; Huang, J-W; Ouyang, Z-W

    2016-10-01

    The enhanced 2D layered structure single crystalline TlCo2Se2 has been successfully fabricated, which exhibits field-induced 3D spin-flop phase transitions. In the case of the magnetic field parallel to the c-axis (B//c), the applied magnetic field induces the evolution of the noncollinear helical magnetic coupling into a ferromagnetic (FM) state with all the magnetization of the Co ion parallel to the c-axis. A striking variation of the field-induced strain within the ab-plane is noticed in the magnetic field region of 20-30 T. In the case of the magnetic field perpendicular to the c-axis (B  ⊥  c), the inter-layer helical antiferromagnetic (AFM) coupling may transform to an initial canted AFM coupling, and then part of it transforms to an intermediate metamagnetic phase with the alignment of two-up-one-down Co magnetic moments and finally to an ultimate FM coupling in higher magnetic fields. The robust noncollinear AFM magnetic coupling is completely destroyed above 30 T. In combination with the measurements of magnetization, magnetoresistance and field-induced strain, a complete magnetic phase diagram of the TlCo2Se2 single crystal has been depicted, demonstrating complex magnetic structures even though the crystal geometry itself gives no indication of the magnetic frustration. PMID:27485370

  8. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides

    DOE PAGES

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe2 and WSe2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo1-xWxSe2 alloys at low W concentrations. This surprisingmore » phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.« less

  9. 3D spin-flop transition in enhanced 2D layered structure single crystalline TlCo2Se2

    NASA Astrophysics Data System (ADS)

    Jin, Z.; Xia, Z.-C.; Wei, M.; Yang, J.-H.; Chen, B.; Huang, S.; Shang, C.; Wu, H.; Zhang, X.-X.; Huang, J.-W.; Ouyang, Z.-W.

    2016-10-01

    The enhanced 2D layered structure single crystalline TlCo2Se2 has been successfully fabricated, which exhibits field-induced 3D spin-flop phase transitions. In the case of the magnetic field parallel to the c-axis (B//c), the applied magnetic field induces the evolution of the noncollinear helical magnetic coupling into a ferromagnetic (FM) state with all the magnetization of the Co ion parallel to the c-axis. A striking variation of the field-induced strain within the ab-plane is noticed in the magnetic field region of 20-30 T. In the case of the magnetic field perpendicular to the c-axis (B  ⊥  c), the inter-layer helical antiferromagnetic (AFM) coupling may transform to an initial canted AFM coupling, and then part of it transforms to an intermediate metamagnetic phase with the alignment of two-up-one-down Co magnetic moments and finally to an ultimate FM coupling in higher magnetic fields. The robust noncollinear AFM magnetic coupling is completely destroyed above 30 T. In combination with the measurements of magnetization, magnetoresistance and field-induced strain, a complete magnetic phase diagram of the TlCo2Se2 single crystal has been depicted, demonstrating complex magnetic structures even though the crystal geometry itself gives no indication of the magnetic frustration.

  10. Enhanced photon absorption in spiral nanostructured solar cells using layered 2D materials.

    PubMed

    Tahersima, Mohammad H; Sorger, Volker J

    2015-08-28

    Recent investigations of semiconducting two-dimensional (2D) transition metal dichalcogenides have provided evidence for strong light absorption relative to its thickness attributed to high density of states. Stacking a combination of metallic, insulating, and semiconducting 2D materials enables functional devices with atomic thicknesses. While photovoltaic cells based on 2D materials have been demonstrated, the reported absorption is still just a few percent of the incident light due to their sub-wavelength thickness leading to low cell efficiencies. Here we show that taking advantage of the mechanical flexibility of 2D materials by rolling a molybdenum disulfide (MoS(2))/graphene (Gr)/hexagonal boron nitride stack to a spiral solar cell allows for optical absorption up to 90%. The optical absorption of a 1 μm long hetero-material spiral cell consisting of the aforementioned hetero stack is about 50% stronger compared to a planar MoS(2) cell of the same thickness; although the volumetric absorbing material ratio is only 6%. A core-shell structure exhibits enhanced absorption and pronounced absorption peaks with respect to a spiral structure without metallic contacts. We anticipate these results to provide guidance for photonic structures that take advantage of the unique properties of 2D materials in solar energy conversion applications.

  11. Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams.

    PubMed

    Favaloro, Tela; Suh, Joonki; Vermeersch, Bjorn; Liu, Kai; Gu, Yijia; Chen, Long-Qing; Wang, Kevin X; Wu, Junqiao; Shakouri, Ali

    2014-05-14

    The metal to insulator transition (MIT) of strongly correlated materials is subject to strong lattice coupling, which brings about the unique one-dimensional alignment of metal-insulator (M-I) domains along nanowires or nanobeams. Many studies have investigated the effects of stress on the MIT and hence the phase boundary, but few have directly examined the temperature profile across the metal-insulating interface. Here, we use thermoreflectance microscopy to create two-dimensional temperature maps of single-crystalline VO2 nanobeams under external bias in the phase coexisting regime. We directly observe highly localized alternating Peltier heating and cooling as well as Joule heating concentrated at the M-I domain boundaries, indicating the significance of the domain walls and band offsets. Utilizing the thermoreflectance technique, we are able to elucidate strain accumulation along the nanobeam and distinguish between two insulating phases of VO2 through detection of the opposite polarity of their respective thermoreflectance coefficients. Microelasticity theory was employed to predict favorable domain wall configurations, confirming the monoclinic phase identification.

  12. Frequency measurement of the 2S(1/2)-2D(3/2) electric quadrupole transition in a single 171Yb+ ion.

    PubMed

    Webster, Stephen; Godun, Rachel; King, Steven; Huang, Guilong; Walton, Barney; Tsatourian, Veronika; Margolis, Helen; Lea, Stephen; Gill, Patrick

    2010-03-01

    We report on precision laser spectroscopy of the 2S(1/2)(F = 0)-2D(3/2) (F = 2, m(F) = 0) clock transition in a single ion of 171Yb+. The absolute value of the transition frequency, determined using an optical frequency comb referenced to a hydrogen maser, is 688358979309310 +/- 9 Hz. This corresponds to a fractional frequency uncertainty of 1.3 x 10(-14).

  13. Nano-optical investigations of the metal-insulator phase behavior of individual VO(2) microcrystals.

    PubMed

    Jones, Andrew C; Berweger, Samuel; Wei, Jiang; Cobden, David; Raschke, Markus B

    2010-05-12

    Despite the relatively simple stoichiometry and structure of VO(2), many questions regarding the nature of its famous metal-insulator transition (MIT) remain unresolved. This is in part due to the prevailing use of polycrystalline film samples and the limited spatial resolution in most studies, hindering access to and control of the complex phase behavior and its inevitable spatial inhomogeneities. Here, we investigate the MIT and associated nanodomain formation in individual VO(2) microcrystals subject to substrate stress. We employ symmetry-selective polarization Raman spectroscopy to identify crystals that are strain-stabilized in either the monoclinic M1 or M2 insulating phase at room-temperature. Raman measurements are further used to characterize the phase dependence on temperature, identifying the appearance of the M2 phase during the MIT. The associated formation and spatial evolution of rutile (R) metallic domains is studied with nanometer-scale spatial resolution using infrared scattering-scanning near-field optical microscopy (s-SNOM). We deduce that even for small crystals of VO(2), the MIT is influenced by the competition between the R, M1, and M2 crystal phases with their different lattice constants subjected to the external substrate-induced stress. The results have important implications for the interpretation of the investigations of conventional polycrystalline thin films where the mutual interaction of constituent crystallites may affect the nature of the MIT in VO(2).

  14. Impact of Interface Roughness on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells

    NASA Astrophysics Data System (ADS)

    Goble, Nicholas; Watson, John; Manfra, Michael; Gao, Xuan

    2014-03-01

    Understanding the non-monotonic behavior in the temperature dependent resistance, R(T) , of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells with varying interface roughness by changing the Al fraction x in the AlxGa1-xAs barrier. Prior to this work, no comprehensive study of the non-monotonic resistance peak against controlled barrier characteristics has been conducted. We show that the shape of the electronic contribution to R(T) is qualitatively unchanged throughout all of our measurements, regardless of the percentage of Al in the barrier. It is observed that increasing x or short range interface roughness suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short range versus long range disorder in the 2D metallic transport in this 2D hole system with interaction parameter rs ~ 20. N.G. acknowledges the US DOE GAANN fellowship (P200A090276 & P200A070434). M.J.M. is supported by the Miller Family Foundation and the US DOE, Office of Basic Energy Sciences, DMS (DE-SC0006671). X.P.A.G thanks the NSF for funding support (DMR-0906415).

  15. 1α,25(OH)2D3 Suppresses the Migration of Ovarian Cancer SKOV-3 Cells through the Inhibition of Epithelial–Mesenchymal Transition

    PubMed Central

    Hou, Yong-Feng; Gao, Si-Hai; Wang, Ping; Zhang, He-Mei; Liu, Li-Zhi; Ye, Meng-Xuan; Zhou, Guang-Ming; Zhang, Zeng-Li; Li, Bing-Yan

    2016-01-01

    Ovarian cancer is the most lethal gynecological malignancy due to its high metastatic ability. Epithelial-mesenchymal transition (EMT) is essential during both follicular rupture and epithelium regeneration. However, it may also accelerate the progression of ovarian carcinomas. Experimental studies have found that 1α,25-dihydroxyvitamin-D3 [1α,25(OH)2D3] can inhibit the proliferation of ovarian cancer cells. In this study, we investigated whether 1α,25(OH)2D3 could inhibit the migration of ovarian cancer cells via regulating EMT. We established a model of transient transforming growth factor-β1(TGF-β1)-induced EMT in human ovarian adenocarcinoma cell line SKOV-3 cells. Results showed that, compared with control, 1α,25(OH)2D3 not only inhibited the migration and the invasion of SKOV-3 cells, but also promoted the acquisition of an epithelial phenotype of SKOV-3 cells treated with TGF-β1. We discovered that 1α,25(OH)2D3 increased the expression of epithelial marker E-cadherin and decreased the level of mesenchymal marker, Vimentin, which was associated with the elevated expression of VDR. Moreover, 1α,25(OH)2D3 reduced the expression level of transcription factors of EMT, such as slug, snail, and β-catenin. These results indicate that 1α,25(OH)2D3 suppresses the migration and invasion of ovarian cancer cells by inhibiting EMT, implying that 1α,25(OH)2D3 might be a potential therapeutic agent for the treatment of ovarian cancer. PMID:27548154

  16. Microwave spectrum of the H/sub 2/D/sup +/ ion: The 2/sub 20/ reverse arrow 2/sub 21/ transition

    SciTech Connect

    Saito, S.; Kawaguchi, K.; Hirota, E.

    1985-01-01

    The 2/sub 20/ reverse arrow 2/sub 21/ transition of H/sub 2/D/sup +/ was detected by using a dc discharge in a mixture of H/sub 2/ and D/sub 2/ with a hollow cathode cooled to liquid nitrogen temperature. The assignment was made on the basis of chemistry for production, the observed linewidth, and the lowering of the spectral intensity by the external magnetic field. The transition frequency was determined to be 155 987.185 +- 0.037 MHz.

  17. Metallic 2D Surface State of Silicon by Ionic Liquid gating and observation of Reentrant Insulating behavior

    NASA Astrophysics Data System (ADS)

    Nelson, J. J.; Goldman, A. M.

    2015-03-01

    Metal insulator transitions are usually observed in high mobility and low carrier density 2D electron systems. There are several open questions regarding the metallic state including its existence in the limit of zero temperature. The current experimental focus is on the production of higher mobility samples to push the critical carrier density to even lower values, which will increase the effects of the Coulomb interaction. Here we report an unexpected result, the observation of the onset of a metallic state at high carrier densities in silicon gated with the ionic liquid DEME-TFSI. In addition we have observed a return to the insulating state as the carrier density was further increased. This reentrant insulting behavior is an effect that was recently predicted. Supported in part by NSF/DMR-1263316. Part of this work was carried out at the Minnesota Nanocenter.

  18. In-situ Hydrogen Sorption 2D-ACAR Facility for the Study of Metal Hydrides for Hydrogen Storage

    NASA Astrophysics Data System (ADS)

    Legerstee, W. J.; de Roode, J.; Anastasopol, A.; Falub, C. V.; Eijt, S. W. H.

    We developed a dedicated hydrogen sorption setup coupled to a positron 2D-ACAR (two-dimensional Angular Correlation of Annihilation Radiation) setup employing a 22Na-source, which will enable to collect 2D-ACAR momentum distributions in-situ as a function of temperature, hydrogen pressure and hydrogen content. In parallel, a dedicated glovebox was constructed for handling air-sensitive metal and metal hydride samples, with a special entrance for the 2D-ACAR sample insert. The 2D-ACAR setup was tested in first measurements on a Pd0.75Ag0.25 foil and on a ball-milled MgH2 powder in both the hydrogen loaded and desorbed states. The hydrogen loaded Pd0.75Ag0.25Hx sample was kept under a 1 bar hydrogen pressure to prevent partial desorption during measurements at room temperature. The collected 2D-ACAR distributions of Pd0.75Ag0.25 and Pd0.75Ag0.25Hx showed similar features as observed in previous studies. The broadening of the ACAR distributions observed for the Mg to MgH2 metal-insulator transition was compared in a quantitative manner to ab-initio calculations reported in the literature.

  19. SU-E-P-35: Real-Time Patient Transit Dose Verification of Volumetric Modulated Arc Radiotherapy by a 2D Ionization Chamber Array

    SciTech Connect

    Liu, X

    2015-06-15

    Purpose: To explore the real-time dose verification method in volumetric modulated arc radiotherapy (VMAT) with a 2D array ion chamber array. Methods: The 2D ion chamber array was fixed on the panel of electronic portal imaging device (EPID). Source-detector distance (SDD)was 140cm. 8mm RW3 solid water was added to the detector panel to achieve maximum readings.The patient plans for esophageal, prostate and liver cancers were selected to deliver on the cylindrical Cheese phantom 5 times in order to validate the reproducibility of doses. Real-time patient transit dose measurements were performed at each fraction. Dose distributions wereevaluated using gamma index criteria of 3mm DTA and 3% dose difference referred to the firsttime Result. Results: The gamma index pass rate in the Cheese phantom were about 98%; The gamma index pass rate for esophageal, liver and prostate cancer patient were about 92%,94%, and 92%, respectively; Gamma pass rate for all single fraction were more than 90%. Conclusion: The 2D array is capable of monitoring the real time transit doses during VMAT delivery. It is helpful to improve the treatment accuracy.

  20. Subkilohertz comparison of the single-ion optical-clock 2S1/2-2D5/2 transition in two 88Sr+ traps

    NASA Astrophysics Data System (ADS)

    Barwood, G. P.; Huang, G.; Klein, H. A.; Gill, P.; Clarke, R. B. M.

    1999-05-01

    A simultaneous observation of the optical-clock 2S1/2-2D5/2 transition at 674 nm, in two separately trapped single 88Sr+ ions, is reported. Two nominally identical miniature rf Paul traps were used together with a 674-nm sideband-injection-locked extended-cavity diode laser. This ``slave'' laser was optically phase locked about 650 MHz away from a ``master'' diode laser, which was itself locked to a high-finesse, ultra-low-expansion (ULE) cavity. The ULE cavity was temperature-stabilized and suspended in an evacuated enclosure, and provided an ``optical flywheel'' reference standard with a relative drift rate of better than 1 part in 1011 per hour. The difference between center frequencies of the single 88Sr+-ion 674-nm (445-THz) transition multiplet in two traps was 120(90) Hz (one standard uncertainty). Thus the two trap center frequencies agree to 3 parts in 1013.

  1. Griffiths singularity of quantum phase transition in ion-gated ZrNCl

    NASA Astrophysics Data System (ADS)

    Saito, Yu; Nojima, Tsutomu; Iwasa, Yoshihiro

    Recent technological advances of thin films fabrication, especially mechanical exfoliation, led to discoveries of less-disordered highly-crystalline two-dimensional (2D) superconductors; atomically thin NbSe2 and ion-gated 2D materials, which show intrinsic properties of 2D superconductors with minimal disorder; for example, metallic ground state, and unconventional 2D Ising superconductivity due to pure spin-valley locking effect. In this talk, we focus on magnetotransport properties of an ionic-liquid gated ZrNCl, which exhibited Griffiths singularity-like behavior in superconductor-metal-insulator transition induced by magnetic fields at low carrier concentrations. The overall behavior is quite similar to the recent results of superconducting Ga thin films, in which quantum Griffiths singularity was observed in vortex-glass state. We will discuss the relationship between Griffiths singularity and quantum tunneling or flux flow of vortices phase (vortex liquid) in our system

  2. Quantification of transition dipole strengths using 1D and 2D spectroscopy for the identification of molecular structures via exciton delocalization: Application to α-helices

    NASA Astrophysics Data System (ADS)

    Grechko, Maksim; Zanni, Martin T.

    2012-11-01

    Vibrational and electronic transition dipole strengths are often good probes of molecular structures, especially in excitonically coupled systems of chromophores. One cannot determine transition dipole strengths using linear spectroscopy unless the concentration is known, which in many cases it is not. In this paper, we report a simple method for measuring transition dipole moments from linear absorption and 2D IR spectra that does not require knowledge of concentrations. Our method is tested on several model compounds and applied to the amide I' band of a polypeptide in its random coil and α-helical conformation as modulated by the solution temperature. It is often difficult to confidently assign polypeptide and protein secondary structures to random coil or α-helix by linear spectroscopy alone, because they absorb in the same frequency range. We find that the transition dipole strength of the random coil state is 0.12 ± 0.013 D2, which is similar to a single peptide unit, indicating that the vibrational mode of random coil is localized on a single peptide unit. In an α-helix, the lower bound of transition dipole strength is 0.26 ± 0.03 D2. When taking into account the angle of the amide I' transition dipole vector with respect to the helix axis, our measurements indicate that the amide I' vibrational mode is delocalized across a minimum of 3.5 residues in an α-helix. Thus, one can confidently assign secondary structure based on exciton delocalization through its effect on the transition dipole strength. Our method will be especially useful for kinetically evolving systems, systems with overlapping molecular conformations, and other situations in which concentrations are difficult to determine.

  3. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  4. Novel Way to Characterize Metal-Insulator-Metal Devices via Nanoindentation: Preprint

    SciTech Connect

    Periasamy, P.; Packard, C. E.; O?Hayre, R. P.; Berry, J. J.; Parilla, P. A.; Ginley, D. S.

    2011-07-01

    Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second 'metal' (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.

  5. Testing a new analytical approach for determination of vibrational transition moment directions in low symmetry planar molecules: 1-D- and 2-D-naphthalene.

    PubMed

    Rogojerov, Marin; Keresztury, Gábor; Kamenova-Nacheva, Mariana; Sundius, Tom

    2012-12-01

    A new analytical approach for improving the precision in determination of vibrational transition moment directions of low symmetry molecules (lacking orthogonal axes) is discussed in this paper. The target molecules are partially uniaxially oriented in nematic liquid crystalline solvent and are studied by IR absorption spectroscopy using polarized light. The fundamental problem addressed is that IR linear dichroism measurements of low symmetry molecules alone cannot provide sufficient information on molecular orientation and transition moment directions. It is shown that computational prediction of these quantities can supply relevant complementary data, helping to reveal the hidden information content and achieve a more meaningful and more precise interpretation of the measured dichroic ratios. The combined experimental and theoretical/computational method proposed by us recently for determination of the average orientation of molecules with C(s) symmetry has now been replaced by a more precise analytical approach. The new method introduced and discussed in full detail here uses a mathematically evaluated angle between two vibrational transition moment vectors as a reference. The discussion also deals with error analysis and estimation of uncertainties of the orientational parameters. The proposed procedure has been tested in an analysis of the infrared linear dichroism (IR-LD) spectra of 1-D- and 2-D-naphthalene complemented with DFT calculations using the scaled quantum mechanical force field (SQM FF) method. PMID:22981590

  6. Two Keggin-type heteropolytungstates with transition metal as a central atom: Crystal structure and magnetic study with 2D-IR correlation spectroscopy

    SciTech Connect

    Chai, Feng; Chen, YiPing; You, ZhuChai; Xia, ZeMin; Ge, SuZhi; Sun, YanQiong; Huang, BiHua

    2013-06-01

    Two Keggin-type heteropolytungstates, [Co(phen)₃]₃[CoW₁₂O₄₀]·9H₂O 1 (phen=1,10-phenanthroline) and [Fe(phen)₃]₂[FeW₁₂O₄₀]·H₃O·H₂O 2, have been synthesized via the hydrothermal technique and characterized by single crystal X-ray diffraction analyses, IR, XPS, TG analysis, UV–DRS, XRD, thermal-dependent and magnetic-dependent 2D-COS IR (two-dimensional infrared correlation spectroscopy). Crystal structure analysis reveals that the polyanions in compound 1 are linked into 3D supramolecule through hydrogen bonding interactions between lattice water molecules and terminal oxygen atoms of polyanion units, and [Co(phen)₃]²⁺ cations distributed in the polyanion framework with many hydrogen bonding interactions. The XPS spectra indicate that all the Co atoms in 1 are +2 oxidation state, the Fe atoms in 2 existing with +2 and +3 mixed oxidation states. - Graphical abstract: The magnetic-dependent synchronous 2D correlation IR spectra of 1 (a), 2 (b) over 0–50 mT in the range of 600–1000 cm⁻¹, the obvious response indicate two Keggin polyanions skeleton susceptible to applied magnetic field. Highlights: • Two Keggin-type heteropolytungstates with transition metal as a central atom has been obtained. • Compound 1 forms into 3D supramolecular architecture through hydrogen bonding between water molecules and polyanions. • Magnetic-dependent 2D-IR correlation spectroscopy was introduced to discuss the magnetism of polyoxometalate.

  7. Dopant-induced 2D-3D transition in small Au-containing clusters: DFT-global optimisation of 8-atom Au-Ag nanoalloys.

    PubMed

    Heiles, Sven; Logsdail, Andrew J; Schäfer, Rolf; Johnston, Roy L

    2012-02-21

    A genetic algorithm (GA) coupled with density functional theory (DFT) calculations is used to perform global optimisations for all compositions of 8-atom Au-Ag bimetallic clusters. The performance of this novel GA-DFT approach for bimetallic nanoparticles is tested for structures reported in the literature. New global minimum structures for various compositions are predicted and the 2D-3D transition is located. Results are explained with the aid of an analysis of the electronic density of states. The chemical ordering of the predicted lowest energy isomers are explained via a detailed analysis of the charge separation and mixing energies of the bimetallic clusters. Finally, dielectric properties are computed and the composition and dimensionality dependence of the electronic polarizability and dipole moment is discussed, enabling predictions to be made for future electric beam deflection experiments.

  8. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    PubMed

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  9. Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2016-02-01

    Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

  10. Electronic structure of a metal-insulator interface: Towards a theory of nonreactive adhesion

    NASA Astrophysics Data System (ADS)

    Bordier, G.; Noguera, C.

    1991-09-01

    With the aim of studying metal-insulator adhesion, we have performed an analytical description of the electronic structure of a flat and defectless metal-insulator interface, for both rocksalt and zinc-blende crystallographic structures of the insulator and, respectively, (100) and (110) orientations of the interface. We model the metal by a jellium, and the AB-type insulator by a tight-binding Hamiltonian with one atomic orbital per site. A matching procedure involving a Green's-function method yields the local density of states of the metal-induced gap states (MIGS), which are found to be in good agreement with previous numerical estimations on specific materials. By analytically solving the Poisson equation in a self-consistent way, we are able to determine the position of the Fermi level of the whole system for any value of the insulator ionicity. Our results depend upon the density of electrons in the metal, and upon the penetration length and the density of MIGS at midgap. They do not depend much upon the crystallographic structure and orientation of the interface. The two relevant parameters are the Fermi energy of the metal and a ratio that represents the ionocovalent character of the insulator. This latter quantity can be allowed to vary from zero to infinity, thus describing the whole range of compounds from covalent semiconductors to highly insulating materials. We produce an analytical expression of the Schottky-barrier height and of the index of interface behavior, S, valid in the whole range of ionicity. S is found to fit well the available experimental data. We demonstrate that the capacitor model to estimate S is restricted to strongly ionic insulators, while it was generally used in the opposite limit. We suggest finally that the above electronic parameters also drive the strength of adhesion and wetting in nonreactive metal-insulator systems.

  11. A simple metal-insulator criterion for the doped Mott-Hubbard materials

    NASA Astrophysics Data System (ADS)

    Gavrichkov, Vladimir A.

    2015-04-01

    A simple metal-insulator criterion for doped Mott-Hubbard materials has been derived. Its readings are closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings (metal or insulator) in the paramagnetic phase reveal the possibility of the insulator state of doped materials with the forbidden first removal electron states. According to its physical meaning, the result is similar to the Wilson's criterion in itinerant electron systems. The application of the criterion to high-Tc cuprates is discussed.

  12. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    PubMed

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  13. Boron carbon nitride based metal-insulator-metal UV detectors for harsh environment applications.

    PubMed

    Prakash, Adithya; Nehate, Shraddha D; Sundaram, Kalpathy B

    2016-09-15

    A metal-insulator-metal (MIM) structure using boron carbon nitride (BCN) was tested for its UV detection capability. Since BCN is one of the hardest and chemically robust materials, it is expected to be a potential choice for a UV detector in extreme and harsh conditions. The BCN thin films were deposited using a dual target RF magnetron sputtering process. The optoelectronic performance of the BCN MIM devices were examined through UV photocurrent measurements. A UV photocurrent of two orders of magnitude higher with respect to dark current was achieved in the range of -3 to 3 V. PMID:27628369

  14. A Refractive Index Sensor Based on a Metal-Insulator-Metal Waveguide-Coupled Ring Resonator

    PubMed Central

    Yan, Shu-Bin; Luo, Liang; Xue, Chen-Yang; Zhang, Zhi-Dong

    2015-01-01

    A refractive index sensor composed of two straight metal-insulator-metal waveguides and a ring resonator is presented. One end of each straight waveguide is sealed and the other end acts as port. The transmission spectrum and magnetic field distribution of this sensor structure are simulated using finite-difference time-domain method (FDTD). The results show that an asymmetric line shape is observed in the transmission spectrum, and that the transmission spectrum shows a filter-like behavior. The quality factor and sensitivity are taken to characterize its sensing performance and filter properties. How structural parameters affect the sensing performance and filter properties is also studied. PMID:26610491

  15. Critical Slowing of Density Fluctuations Approaching the Isotropic-Nematic Transition in Liquid Crystals: 2D IR Measurements and Mode Coupling Theory.

    PubMed

    Sokolowsky, Kathleen P; Bailey, Heather E; Hoffman, David J; Andersen, Hans C; Fayer, Michael D

    2016-07-21

    Two-dimensional infrared (2D IR) data are presented for a vibrational probe in three nematogens: 4-cyano-4'-pentylbiphenyl, 4-cyano-4'-octylbiphenyl, and 4-(trans-4-amylcyclohexyl)-benzonitrile. The spectral diffusion time constants in all three liquids in the isotropic phase are proportional to [T*/(T - T*)](1/2), where T* is 0.5-1 K below the isotropic-nematic phase transition temperature (TNI). Rescaling to a reduced temperature shows that the decays of the frequency-frequency correlation function (FFCF) for all three nematogens fall on the same curve, suggesting a universal dynamic behavior of nematogens above TNI. Spectral diffusion is complete before significant orientational relaxation in the liquid, as measured by optically heterodyne detected-optical Kerr effect (OHD-OKE) spectroscopy, and before any significant orientational randomization of the probe measured by polarization selective IR pump-probe experiments. To interpret the OHD-OKE and FFCF data, we constructed a mode coupling theory (MCT) schematic model for the relationships among three correlation functions: ϕ1, a correlator for large wave vector density fluctuations; ϕ2, the orientational correlation function whose time derivative is the observable in the OHD-OKE experiment; and ϕ3, the FFCF for the 2D IR experiment. The equations for ϕ1 and ϕ2 match those in the previous MCT schematic model for nematogens, and ϕ3 is coupled to the first two correlators in a straightforward manner. Resulting models fit the data very well. Across liquid crystals, the temperature dependences of the coupling constants show consistent, nonmonotonic behavior. A remarkable change in coupling occurs at ∼5 K above TNI, precisely where the rate of spectral diffusion in 5CB was observed to deviate from that of a similar nonmesogenic liquid.

  16. Critical Slowing of Density Fluctuations Approaching the Isotropic-Nematic Transition in Liquid Crystals: 2D IR Measurements and Mode Coupling Theory.

    PubMed

    Sokolowsky, Kathleen P; Bailey, Heather E; Hoffman, David J; Andersen, Hans C; Fayer, Michael D

    2016-07-21

    Two-dimensional infrared (2D IR) data are presented for a vibrational probe in three nematogens: 4-cyano-4'-pentylbiphenyl, 4-cyano-4'-octylbiphenyl, and 4-(trans-4-amylcyclohexyl)-benzonitrile. The spectral diffusion time constants in all three liquids in the isotropic phase are proportional to [T*/(T - T*)](1/2), where T* is 0.5-1 K below the isotropic-nematic phase transition temperature (TNI). Rescaling to a reduced temperature shows that the decays of the frequency-frequency correlation function (FFCF) for all three nematogens fall on the same curve, suggesting a universal dynamic behavior of nematogens above TNI. Spectral diffusion is complete before significant orientational relaxation in the liquid, as measured by optically heterodyne detected-optical Kerr effect (OHD-OKE) spectroscopy, and before any significant orientational randomization of the probe measured by polarization selective IR pump-probe experiments. To interpret the OHD-OKE and FFCF data, we constructed a mode coupling theory (MCT) schematic model for the relationships among three correlation functions: ϕ1, a correlator for large wave vector density fluctuations; ϕ2, the orientational correlation function whose time derivative is the observable in the OHD-OKE experiment; and ϕ3, the FFCF for the 2D IR experiment. The equations for ϕ1 and ϕ2 match those in the previous MCT schematic model for nematogens, and ϕ3 is coupled to the first two correlators in a straightforward manner. Resulting models fit the data very well. Across liquid crystals, the temperature dependences of the coupling constants show consistent, nonmonotonic behavior. A remarkable change in coupling occurs at ∼5 K above TNI, precisely where the rate of spectral diffusion in 5CB was observed to deviate from that of a similar nonmesogenic liquid. PMID:27363680

  17. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-24

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  18. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    PubMed Central

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  19. Plasmonic mode interferences and Fano resonances in Metal-Insulator- Metal nanostructured interface

    NASA Astrophysics Data System (ADS)

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-09-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range.

  20. Plasmonic mode interferences and Fano resonances in Metal-Insulator-Metal nanostructured interface.

    PubMed

    Nicolas, Rana; Lévêque, Gaëtan; Marae-Djouda, Joseph; Montay, Guillame; Madi, Yazid; Plain, Jérôme; Herro, Ziad; Kazan, Michel; Adam, Pierre-Michel; Maurer, Thomas

    2015-01-01

    Metal-insulator-metal systems exhibit a rich underlying physics leading to a high degree of tunability of their spectral properties. We performed a systematic study on a metal-insulator-nanostructured metal system with a thin 6 nm dielectric spacer and showed how the nanoparticle sizes and excitation conditions lead to the tunability and coupling/decoupling of localized and delocalized plasmonic modes. We also experimentally evidenced a tunable Fano resonance in a broad spectral window 600 to 800 nm resulting from the interference of gap modes with white light broad band transmitted waves at the interface playing the role of the continuum. By varying the incident illumination angle shifts in the resonances give the possibility to couple or decouple the localized and delocalized modes and to induce a strong change of the asymmetric Fano profile. All these results were confirmed with a crossed comparison between experimental and theoretical measurements, confirming the nature of different modes. The high degree of control and tunability of this plasmonically rich system paves the way for designing and engineering of similar systems with numerous applications. In particular, sensing measurements were performed and a figure of merit of 3.8 was recorded ranking this sensor among the highest sensitive in this wavelength range. PMID:26399425

  1. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    NASA Astrophysics Data System (ADS)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  2. Magnetism and Metal-Insulator Transition in Fe(Sb1−xTex)2

    SciTech Connect

    Petrovic, C.; Hu, R.; Mitrovic, V.F.

    2009-02-09

    We have investigated structural, magnetic, and transport properties of Fe(Sb{sub 1-x}Te{sub x}){sub 2} single crystals. Whereas metallic ground state is induced for x = 0.001, canted antiferromagnetism is observed for 0.1 {le} x {le} 0.4 with an intermediate ferromagnetic phase for x = 0.2. With higher Te doping, semiconducting behavior is restored and the variable range hopping conduction mechanism dominates at low temperatures for 0.4 {le} x {le} 0.6. We discuss our results within the framework of inverted metal to insulator in correlated electron insulators.

  3. Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces.

    PubMed

    Zhao, J Z; Fan, W; Verstraete, M J; Zanolli, Z; Fan, J; Yang, X B; Xu, H; Tong, S Y

    2016-09-01

    Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101[over ¯]0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (101[over ¯]0) surface of many wurtzite compounds. PMID:27661702

  4. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    DOE PAGES

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance themore » binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.« less

  5. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    DOE PAGES

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variablemore » range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.« less

  6. High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

    PubMed

    Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

    2011-04-21

    Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

  7. Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO3

    SciTech Connect

    Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

    2015-09-08

    First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance the binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.

  8. Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

    NASA Astrophysics Data System (ADS)

    Zhao, J. Z.; Fan, W.; Verstraete, M. J.; Zanolli, Z.; Fan, J.; Yang, X. B.; Xu, H.; Tong, S. Y.

    2016-09-01

    Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (10 1 ¯0 ) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (10 1 ¯0 ) surface of many wurtzite compounds.

  9. 1,25(OH)2D3 attenuates TGF-β1/β2-induced increased migration and invasion via inhibiting epithelial-mesenchymal transition in colon cancer cells.

    PubMed

    Chen, Shanwen; Zhu, Jing; Zuo, Shuai; Ma, Ju; Zhang, Junling; Chen, Guowei; Wang, Xin; Pan, Yisheng; Liu, Yucun; Wang, Pengyuan

    1,25-Dihydroxyvitamin D3 (1,25(OH)2D3) has been reported to inhibit proliferation and migration of multiple types of cancer cells. However, the mechanism underlying its anti-metastasis effect is not fully illustrated. In this study, the effect of 1,25(OH)2D3 on TGF-β1/β2-induced epithelial-mesenchymal transition (EMT) is tested in colon cancer cells. The results suggest that 1,25(OH)2D3 inhibited TGF-β1/β2-induced increased invasion and migration of in SW-480 and HT-29 cells. 1,25(OH)2D3 also inhibited the cadherin switch in SW-480 and HT-29 cells. TGF-β1/β2-induced increased expression of EMT-related transcription factors was also inhibited by 1,25(OH)2D3. 1,25(OH)2D3 also inhibited the secretion of MMP-2 and MMP-9 and increased expression of F-actin induced by TGF-β1/β2 in SW-480 cells. Taken together, this study suggests that the suppression of EMT might be one of the mechanisms underlying the anti-metastasis effect of 1,25(OH)2D3 in colon cancer cells.

  10. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

    SciTech Connect

    Golubev, Dmitri; Kuzmin, Leonid

    2001-06-01

    The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. {copyright} 2001 American Institute of Physics.

  11. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    NASA Astrophysics Data System (ADS)

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-08-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  12. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.

  13. Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

    PubMed

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2013-04-01

    An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

  14. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes.

    PubMed

    Lee, Changhwan; Nedrygailov, Ievgen I; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed. PMID:26451470

  15. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes

    NASA Astrophysics Data System (ADS)

    Lee, Changhwan; Nedrygailov, Ievgen I.; Lee, Young Keun; Ahn, Changui; Lee, Hyosun; Jeon, Seokwoo; Park, Jeong Young

    2015-11-01

    Au-TiO2-Ti nanodiodes with a metal-insulator-metal structure were used to probe hot electron flows generated upon photon absorption. Hot electrons, generated when light is absorbed in the Au electrode of the nanodiode, can travel across the TiO2, leading to a photocurrent. Here, we demonstrate amplification of the hot electron flow by (1) localized surface plasmon resonance on plasmonic nanostructures fabricated by annealing the Au-TiO2-Ti nanodiodes, and (2) reducing the thickness of the TiO2. We show a correlation between changes in the morphology of the Au electrodes caused by annealing and amplification of the photocurrent. Based on the exponential dependence of the photocurrent on TiO2 thickness, the transport mechanism for the hot electrons across the nanodiodes is proposed.

  16. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-01

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination. PMID:26886870

  17. Detuned Plasmonic Bragg Grating Sensor Based on a Defect Metal-Insulator-Metal Waveguide

    PubMed Central

    Qu, Shinian; Song, Ci; Xia, Xiushan; Liang, Xiuye; Tang, Baojie; Hu, Zheng-Da; Wang, Jicheng

    2016-01-01

    A nanoscale Bragg grating reflector based on the defect metal-insulator-metal (MIM) waveguide is developed and numerically simulated by using the finite element method (FEM). The MIM-based structure promises a highly tunable broad stop-band in transmission spectra. The narrow transmission window is shown to appear in the previous stop-band by changing the certain geometrical parameters. The central wavelengths can be controlled easily by altering the geographical parameters. The development of surface plasmon polarition (SPP) technology in metallic waveguide structures leads to more possibilities of controlling light at deep sub-wavelengths. Its attractive ability of breaking the diffraction limit contributes to the design of optical sensors. PMID:27240381

  18. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

    SciTech Connect

    Alimardani, Nasir; Conley, John F.

    2014-08-25

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.

  19. Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

    PubMed

    Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

    2016-03-01

    We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

  20. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

    PubMed Central

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  1. A simple formulation for magnetoresistance in metal-insulator granular films with increased current

    NASA Astrophysics Data System (ADS)

    Boff, M. A. S.; Canto, B.; Baibich, M. N.; Pereira, L. G.

    2013-02-01

    We studied the tunnel magnetoresistance in metal/insulator granular films when the applied current is varied. The tunnel magnetoresistance shows a strong modification related to a non-Ohmic behaviour of theses materials. It was verified that spin-dependent tunnelling is the main mechanism for magnetoresistance at low applied current. However, when the current is high, another mechanism gets to be important: it is independent of the magnetization and is associated to variable range hopping between metallic grains. In this work, we propose a simple modification of Inoue and Maekawa's model for tunnelling magnetoresistance in granulars, rewriting the expression for resistance as a function of magnetic field and temperature, also taking into account the two different contributions.

  2. A four-port plasmonic quasi-circulator based on metal-insulator-metal waveguides.

    PubMed

    Wen, Kunhua; Yan, Lianshan; Pan, Wei; Luo, Bin; Guo, Zhen; Guo, Yinghui

    2012-12-17

    A metal-insulator-metal (MIM)-based four-port quasi-circulator consisting of four bus waveguides and eight narrow inside/outside slits is proposed without using nonreciprocity. Once the input port is defined, only a specific output port could be obtained by proper the design of parameters of the waveguides and slits. Simulation results based on finite-different time-domain (FDTD) method demonstrate that the transmittance at the center wavelength of the appropriate output port can reach 0.63 while those of the other two output ports are lower than 0.06. Through adjusting the slits spacing or optimizing the insulator material in the slits, the isolation of the circulator could be further improved with a slight sacrifice of the transmission. Such structure could also be used for wavelength demultiplexing with the center wavelength determined by the length of the bus waveguides and slits.

  3. Andreev Reflections in Micrometer-Scale Normal Metal-Insulator-Superconductor Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Lowell, Peter J.; O'Neil, Galen C.; Underwood, Jason M.; Ullom, Joel N.

    2011-11-01

    Understanding the subgap behavior of Normal metal-Insulator-Superconductor (NIS) tunnel junctions is important in order to be able to accurately model the thermal properties of the junctions. Hekking and Nazarov (Phys. Rev. B 49:6847, 1994) developed a theory in which NIS subgap current in thin-film structures can be modeled by multiple Andreev reflections. In their theory, the current due to Andreev reflections depends on the junction area and the junction resistance area product. We have measured the current due to Andreev reflections in NIS tunnel junctions for various junction sizes and junction resistance area products and found that the multiple reflection theory is in agreement with our data.

  4. Optical magnetism and plasmonic Fano resonances in metal-insulator-metal oligomers.

    PubMed

    Verre, R; Yang, Z J; Shegai, T; Käll, M

    2015-03-11

    The possibility of achieving optical magnetism at visible frequencies using plasmonic nanostructures has recently been a subject of great interest. The concept is based on designing structures that support plasmon modes with electron oscillation patterns that imitate current loops, that is, magnetic dipoles. However, the magnetic resonances are typically spectrally narrow, thereby limiting their applicability in, for example, metamaterial designs. We show that a significantly broader magnetic response can be realized in plasmonic pentamers constructed from metal-insulator-metal (MIM) sandwich particles. Each MIM unit acts as a magnetic meta-atom and the optical magnetism is rendered quasi-broadband through hybridization of the in-plane modes. We demonstrate that scattering spectra of individual MIM pentamers exhibit multiple Fano resonances and a broad subradiant spectral window that signals the magnetic interaction and a hierarchy of coupling effects in these intricate three-dimensional nanoparticle oligomers.

  5. Microrefrigeration by a pair of normal metal/insulator/superconductor junctions

    NASA Technical Reports Server (NTRS)

    Leivo, M. M.; Pekola, J. P.; Averin, D. V.

    1995-01-01

    We suggest and demonstrate experimentally that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistences of 1.0 and 1.1 kOmega is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 micrometers(exp 2) at T = 300 mK. This cooling power density implies that scaling of junction area up to about 1 mm(exp 2) should bring the cooling power into the microW range.

  6. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.

    PubMed

    Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

    2016-01-01

    An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

  7. Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

    NASA Astrophysics Data System (ADS)

    Lu, Tingyu; Zhou, Jun; Nakayama, Tsuneyoshi; Yang, Ronggui; Li, Baowen

    2016-02-01

    We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992), 10.1103/PhysRevLett.68.1563] and most recently by Hohensee et al. [Nat. Commun. 6, 6578 (2015), 10.1038/ncomms7578].

  8. Investigation on Photoelectric Behavior of Metal-Insulator-Semiconductor Structure Based on Titania Nanotubes Arrays

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Panaitescu, Eugen; Richter, Christiaan; Menon, Latika

    2014-03-01

    Titanium dioxide (TiO2) has attracted great interest as an inexpensive, earth-abundant and environment-friendly anode material for next generation photovoltaic devices and the metal-insulator-semiconductor (MIS) concept is one of the most promising approaches for improving solar cell cost effectiveness (in /W). We investigated hybrid MIS structures of semiconducting ordered titania nanotube arrays integrated with insulating iron oxide or copper oxide layers and metallic copper. The morphological and structural properties of the samples were analyzed by scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy with elemental mapping, and X-ray diffraction. The nanotubular morphology represents a step change from the current thin film approach, providing significantly larger surface area while facilitating the charge separation and electron transport. Photoelectric behavior of the new structures was estimated by transient response, quantum efficiency and spectral response, and a solar simulator was used for recording the photovoltaic response.

  9. Multi-dimensional transition-metal coordination polymers of 4,4'-bipyridine-N,N'-dioxide: 1D chains and 2D sheets.

    PubMed

    Jia, Junhua; Blake, Alexander J; Champness, Neil R; Hubberstey, Peter; Wilson, Claire; Schröder, Martin

    2008-10-01

    Reaction of 4,4'-bipyridine -N, N' -dioxide (L) with a variety of transition-metal salts in MeOH affords a range of coordination polymer products. For the complexes [FeCl 3(mu-L)] infinity, 1, and ([Cu(L) 2(OHMe) 2(mu-L)].2PF 6. n(solv)) infinity, 2, 1D chain structures are observed, whereas ([Mn(mu-L) 3].2ClO 4) infinity, 3, and ([Cu(mu-L) 3].2BF 4) infinity, 4, both show 2D sheet architectures incorporating an unusual 3 (6)- hxl topology. The more common 4 (4)- sql topology is observed in [Cd(ONO 2) 2(mu-L) 2] infinity, 5, ([Cu(OHMe) 2(mu-L) 2].2ZrF 5) infinity, 6, ([Cu(L) 2(mu-L) 2].2EF 6) infinity ( 7 E = P; 8 E = Sb), and ([Et 4N][Cu(OHMe) 0.5(mu-L) 2(mu-FSiF 4F) 0.5].2SbF 6. n(solv)) infinity, 9. In 6, the [ZrF 5] (-) anion, formed in situ from [ZrF 6] (2-), forms 1D anionic chains ([ZrF 5] (-)) infinity of vertex-linked octahedra, and these chains thread through a pair of inclined polycatenated ([Cu(OHMe) 2(mu-L) 2] (2+)) infinity 4 (4)- sql grids to give a rare example of a triply intertwined coordination polymer. 9 also shows a 3D matrix structure with 4 (4)- sql sheets of stoichiometry ([Cu(L) 2] (2+)) infinity coordinatively linked by bridging [SiF 6] (2-) anions to give a structure of 5-c 4 (4).6 (6)- sqp topology. The mononuclear [Cu(L) 6].2BF 4 ( 10) and [Cd(L) 6].2NO 3 ( 11) and binuclear complexes [(Cu(L)(OH 2)) 2(mu-L) 2)].2SiF 6. n(solv), 12, are also reported. The majority of the coordination polymers are free of solvent and are nonporous. Thermal treatment of materials that do contain solvent results in structural disintegration of the complex structures giving no permanent porosity.

  10. Absolute frequency of the {sup 88}Sr{sup +} 5s {sup 2}S{sub 1/2}-4d {sup 2}D{sub 5/2} reference transition at 445 THz and evaluation of systematic shifts

    SciTech Connect

    Madej, A.A.; Bernard, J.E.; Dube, P.; Marmet, L.; Windeler, R.S.

    2004-07-01

    A Cs referenced optical frequency comb system has been used to measure the center frequency of the 5s {sup 2}S{sub 1/2}-4d {sup 2}D{sub 5/2} transition at 445 THz in a single, trapped, and laser-cooled {sup 88}Sr{sup +} ion. The transition frequency {nu}{sub SD}=444 779 044 095 510 Hz{+-}50 Hz (1{sigma}) is obtained, when corrected for systematic shifts. A detailed calculation of the estimated systematic shifts is presented which yields improved values for the various shift parameters including blackbody and electric quadrupole moment shifts.

  11. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

    2014-08-25

    A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposited LaAlO{sub 3} layer and a thin atomic-layer-deposited Al{sub 2}O{sub 3} buffer layer. The source-drain current maximum, extrinsic transconductance, and threshold voltage of the MISFET are measured to be −40.7 mA·mm{sup −1}, 13.2 ± 0.1 mS·mm{sup −1}, and −3.1 ± 0.1 V, respectively. The logic inverters show distinct inversion (NOT-gate) characteristics for input voltages ranging from 4.0 to −10.0 V. With increasing the load resistance, the gain of the logic inverter increases from 5.6 to as large as 19.4. The pulse response against the high and low input voltages shows the inversion response with the low and high output voltages.

  12. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  13. Widely tunable SPP bandgap in a nonlinear metal-insulator-metal waveguide.

    PubMed

    Zhou, Fei; Liu, Ye; Cai, Weiping

    2014-12-01

    In this article, we propose a novel kind of widely tunable surface plasmon polaritons (SPP) bandgap in a Kerr nonlinear metal-insulator-metal waveguide. By two identical gratings, the pump beam is coupled to two opposing SPP waves, which interfere with each other and results in SPP standing wave in the region between the two gratings. The refractive index of the Kerr nonlinear material is then periodically modulated by the SPP standing wave, and a SPP bandgap is formed. The position of the SPP bandgap can be tuned from 1.4 μm to 1.75 μm by adjusting the pump wavelength, and the relationship between the transmittance contrast of the bandgap and the pump power is also studied. Comparing with existing methods that directly modulate the refractive index (RI) or the width of the waveguide, in our work, the periodic modulation of the RI comes from the interference of the pump light, which can greatly simplify the fabrication. This work may find applications in the design of novel nonlinear devices for future all-optical integrated circuits.

  14. Characterizations of realized metal-insulator-silicon-insulator-metal waveguides and nanochannel fabrication via insulator removal.

    PubMed

    Kwon, Min-Suk; Shin, Jin-Soo; Shin, Sang-Yung; Lee, Wan-Gyu

    2012-09-24

    We investigate experimentally metal-insulator-silicon-insulator-metal (MISIM) waveguides that are fabricated by using fully standard CMOS technology. They are hybrid plasmonic waveguides, and they have a feature that their insulator is replaceable with functional material. We explain a fabrication process for them and discuss fabrication results based on 8-inch silicon-on-insulator wafers. We measured the propagation characteristics of the MISIM waveguides that were actually fabricated to be connected to Si photonic waveguides through symmetric and asymmetric couplers. When incident light from an optical source has transverse electric (TE) polarization and its wavelength is 1318 or 1554 nm, their propagation losses are between 0.2 and 0.3 dB/μm. Excess losses due to the symmetric couplers are around 0.5 dB, which are smaller than those due to the asymmetric couplers. Additional measurement results indicate that the MISIM waveguide supports a TE-polarized hybrid plasmonic mode. Finally, we explain a process of removing the insulator without affecting the remaining MISIM structure to fabricate ~30-nm-wide nanochannels which may be filled with functional material.

  15. Photoelectric energy conversion of plasmon-generated hot carriers in metal-insulator-semiconductor structures.

    PubMed

    García de Arquer, F Pelayo; Mihi, Agustín; Kufer, Dominik; Konstantatos, Gerasimos

    2013-04-23

    Plasmonic excitation in metals has received great attention for light localization and control of light-matter interactions at the nanoscale with a plethora of applications in absorption enhancement, surface-enhanced Raman scattering, or biosensing. Electrically active plasmonic devices, which had remained underexplored, have recently become a growing field of interest. In this report we introduce a metal-insulator-semiconductor heterostructure for plasmo-electric energy conversion, a novel architecture to harvest hot-electrons derived from plasmonic excitations. We demonstrate external quantum efficiency (EQE) of 4% at 460 nm using a Ag nanostructured electrode and EQE of 1.3% at 550 nm employing a Au nanostructured electrode. The insulator interfacial layer has been found to play a crucial role in interface passivation, a requisite in photovoltaic applications to achieving both high open-circuit voltages (0.5 V) and fill-factors (0.5), but its introduction simultaneously modifies hot-electron injection and transport. We investigate the influence passivation has on these processes for different material configurations, and characterize different types of transport depending on the initial plasmon energy band, reporting power conversion efficiencies of 0.03% for nanopatterned silver electrodes. PMID:23495769

  16. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  17. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil

    NASA Astrophysics Data System (ADS)

    Yang, D. G.; Choi, Y. H.; Kim, Y. G.; Song, J. B.; Lee, H. G.

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25Ic), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid.

  18. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil.

    PubMed

    Yang, D G; Choi, Y H; Kim, Y G; Song, J B; Lee, H G

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25I(c)), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid. PMID:27036797

  19. Elastoplasmonic interaction in metal-insulator-metal localized surface plasmon systems

    NASA Astrophysics Data System (ADS)

    Mrabti, Abdelali; Lévêque, Gaëtan; Akjouj, Abdellatif; Pennec, Yan; Djafari-Rouhani, Bahram; Nicolas, Rana; Maurer, Thomas; Adam, Pierre-Michel

    2016-08-01

    We investigate theoretically and numerically the coupling between elastic and localized surface plasmon modes in a system of gold nanocylinders separated from a thin gold film by a dielectric spacer of few nanometers thickness. That system supports plasmon modes confined in between the bottom of the nanocylinder and the top of the gold film, which arise from the formation of interference patterns by short-wavelength metal-insulator-metal propagating plasmon. First, we present the plasmonic properties of the system though computer-simulated extinction spectra and field maps associated to the different optical modes. Next, a simple analytical model is introduced, which allows to correctly reproduce the shape and wavelengths of the plasmon modes. This model is used to investigate the efficiency of the coupling between an elastic deformation and the plasmonic modes. In the last part of the paper, we present the full numerical simulations of the elastic properties of the system, and then compute the acousto-plasmonic coupling between the different plasmon modes and five acoustic modes of very different shape. The efficiency of the coupling is assessed first by evaluating the modulation of the resonance wavelength, which allows comparison with the analytical model, and finally in term of time-modulation of the transmission spectra on the full visible range, computed for realistic values of the deformation of the nanoparticle.

  20. Analytical and experimental investigation of electrical characteristics of a metallic insulation GdBCO coil.

    PubMed

    Yang, D G; Choi, Y H; Kim, Y G; Song, J B; Lee, H G

    2016-03-01

    This paper presents results, experimental and analytical, of the electrical characteristics of GdBCO single-pancake coils co-wound with a brass tape as metallic insulation (MI coil). The GdBCO pancakes were subjected to sudden discharge, charge-discharge, and over-current tests. The sudden discharge and charge-discharge test results of the MI coil demonstrated that MI coils can be charged and discharged significantly faster than non-insulated coils that are wound only with GdBCO tape. In over-current tests at 150 A (1.25I(c)), the MI coil exhibited better electrical behavior, i.e., self-protecting features, than its counterpart co-wound with Kapton tape, an insulator. Moreover, the experimental and analytical results are in agreement, validating the use of a concise equivalent parallel-RL circuit model for the MI coil to characterize its electrical behavior. Overall, the MI winding technique is highly promising to help build compact, mechanically robust, and self-protecting magnets composed of REBCO pancake coils. With no organic material in the winding, MI REBCO pancakes will be immune to neutron radiation damage, making the MI winding technique a viable option for fusion reactors, such as for toroidal field, poroidal field magnets, and central solenoid.

  1. Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Jing, YouLiang; Li, ZhiFeng; Li, Qian; Chen, PingPing; Zhou, XiaoHao; Wang, Han; Li, Ning; Lu, Wei

    2016-04-01

    We report the dependence of the near-field optical modes in metal-insulator-metal quantum well infrared photodetector (MIM-QWIP) on the incident angles. Three optical modes are observed and attributed to the 2nd- and the 3rd-order surface plasmon polariton (SPP) modes and the localized surface polariton (LSP) mode. In addition to the observation of a responsivity enhancement of 14 times by the LSP mode, the varying pattern of the three modes against the incident angle are revealed, in which the LSP mode is fixed while the 2nd SPP mode splits into two branches and the 3rd SPP mode red-shifts. The detailed mechanisms are analyzed and numerically simulated. The results fit the experiments very well, demonstrating the wavevector coupling effect between the incident light and the metal gratings on the SPP modes. Our work will pave the way to fully understanding the influence of incident angles on a detector's response for applying the MIM-QWIP to focal plane arrays.

  2. Magnetic modulation of surface plasmon modes in magnetoplasmonic metal-insulator-metal cavities.

    PubMed

    Ferreiro-Vila, E; García-Martín, J M; Cebollada, A; Armelles, G; González, M U

    2013-02-25

    The magnetic modulation of the surface plasmon-polariton (SPP) wavevector is experimentally and theoretically studied for the plasmonic modes excited in metal-insulator-metal (MIM) magnetoplasmonic cavities. For this purpose, Ag/SiO₂/Ag multilayers with different SiO₂ layer thickness in which a thin Co layer is positioned near the top Ag/SiO₂ interface, near the bottom SiO₂/Ag one, or near both of them, are studied. The magnetoplasmonic MIM cavities present symmetric (SM) and antisymmetric (AM) plasmonic modes, of different wavevector and electromagnetic field profiles inside the MIM cavity. We show that the magnetic SPP wavevector modulation strongly depends on which mode is considered, the cavity thickness, and the number and specific location of Co layers within the structure. With only one ferromagnetic layer, a net modulation is obtained, of higher magnitude as we reduce the SiO₂ layer thickness. The introduction of a second Co layer in the structure reduces the modulation due to the non-reciprocal character of SPP modes under an applied magnetic field. Moreover, we demonstrate that the non-reciprocal nature of the SPP modulation can be experimentally visualized in the magnetic hysteresis loops under plasmon excitation conditions by using two Co layers with different magnetization switching fields. PMID:23482025

  3. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry.

    PubMed

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  4. Stress-induced self-rolled metal/insulator bifilm microtube with micromesh walls

    NASA Astrophysics Data System (ADS)

    Lee, Kook-Nyung; Seo, Yeong-Tai; Lee, Min-Ho; Jung, Suk-Won; Kim, Yong-Kweon; Kim, Jung-Mu; Kyeong Seong, Woo

    2013-01-01

    A metal/insulator microtube with micromesh walls was constructed using stress-assisted self-rolling technology. The mesh-sidewall Pt/Ti/SiO2 microtube was self-formed by a tensile-stressed metal Pt/Ti film deposited onto a pre-patterned SiO2 micromesh layer. The microtube measured about 25 µm in diameter and was longer than 7 mm. The sidewall of the microtube was a square mesh, 5-20 µm long, and was electrically connected to electrical pads for electrical conductance measurement. The electrical resistance of the rolled-up microtube was measured to be 250-350 Ω when the microtube resistor's length was around 540 µm. The real-time measurement of the conductance change of the microtube with a Pt resistor could monitor the temperature change generated by heat injection. The microtube with micromesh walls is expected to be an interesting structure that has promising potential for use in electronics, chemical and biological applications.

  5. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  6. An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation

    NASA Astrophysics Data System (ADS)

    Hill, James C.; Landers, Alan T.; Switzer, Jay A.

    2015-11-01

    The photoelectrochemical splitting of water into hydrogen and oxygen requires a semiconductor to absorb light and generate electron-hole pairs, and a catalyst to enhance the kinetics of electron transfer between the semiconductor and solution. A crucial question is how this catalyst affects the band bending in the semiconductor, and, therefore, the photovoltage of the cell. We introduce a simple and inexpensive electrodeposition method to produce an efficient n-Si/SiOx/Co/CoOOH photoanode for the photoelectrochemical oxidation of water to oxygen. The photoanode functions as a solid-state, metal-insulator-semiconductor photovoltaic cell with spatially non-uniform barrier heights in series with a low overpotential water-splitting electrochemical cell. The barrier height is a function of the Co coverage; it increases from 0.74 eV for a thick, continuous film to 0.91 eV for a thin, inhomogeneous film that has not reached coalescence. The larger barrier height leads to a 360 mV photovoltage enhancement relative to a solid-state Schottky barrier.

  7. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    PubMed Central

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-01-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows. PMID:27174791

  8. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bullock, J.; Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-01

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n+ and p+ surfaces are passivated with SiO2/a-Si:H and Al2O3/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n+) contacts, with SiO2 thicknesses of ˜1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρc of ˜3 mΩ cm2 and a recombination current density J0c of ˜40 fA/cm2. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p+) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  9. Dual wavelength demultiplexer based on metal-insulator-metal plasmonic circular ring resonators

    NASA Astrophysics Data System (ADS)

    Rakhshani, Mohammad Reza; Mansouri-Birjandi, Mohammad Ali

    2016-06-01

    In this paper, we investigated a plasmonic demultiplexer structure based on Metal-Insulator-Metal (MIM) waveguides and circular ring resonators. In order to achieve the structure of demultiplexer, two improved ring resonators have been used, which input and outputs MIM waveguides coupled by the ring resonators. To improve the transmission efficiency, a reflector was introduced at the right end of the input and output waveguides. By substituting the ring core with dielectric, the possibility of tuning the resonance wavelength of the proposed structure is illustrated, and the effect of various parameters such as radius and refractive index in transmission efficiency is studied in detail. This is useful for the design of integrated circuits in which it is not possible to extend the dimension of the ring resonator to attain a longer resonance wavelength. Transmission efficiency and quality factor of the single ring are 84% and 110, respectively. The simulation results using finite difference time domain method shows that in the proposed demultiplexer, which is composed of two rings with different core refractive indexes, the average power efficiency, bandwidth for each output channel, and the mean value of crosstalk are estimated 80%, 17 nm, and -26.95 dB, respectively. It is revealed that the significant features of the device are high transmission efficiency, low crosstalk, high-quality factor, and tunability for desired wavelengths. Therefore, the proposed structure has the potential to be applied in plasmonic integrated circuits.

  10. Magnetic modulation of surface plasmon modes in magnetoplasmonic metal-insulator-metal cavities.

    PubMed

    Ferreiro-Vila, E; García-Martín, J M; Cebollada, A; Armelles, G; González, M U

    2013-02-25

    The magnetic modulation of the surface plasmon-polariton (SPP) wavevector is experimentally and theoretically studied for the plasmonic modes excited in metal-insulator-metal (MIM) magnetoplasmonic cavities. For this purpose, Ag/SiO₂/Ag multilayers with different SiO₂ layer thickness in which a thin Co layer is positioned near the top Ag/SiO₂ interface, near the bottom SiO₂/Ag one, or near both of them, are studied. The magnetoplasmonic MIM cavities present symmetric (SM) and antisymmetric (AM) plasmonic modes, of different wavevector and electromagnetic field profiles inside the MIM cavity. We show that the magnetic SPP wavevector modulation strongly depends on which mode is considered, the cavity thickness, and the number and specific location of Co layers within the structure. With only one ferromagnetic layer, a net modulation is obtained, of higher magnitude as we reduce the SiO₂ layer thickness. The introduction of a second Co layer in the structure reduces the modulation due to the non-reciprocal character of SPP modes under an applied magnetic field. Moreover, we demonstrate that the non-reciprocal nature of the SPP modulation can be experimentally visualized in the magnetic hysteresis loops under plasmon excitation conditions by using two Co layers with different magnetization switching fields.

  11. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

    2016-05-01

    Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

  12. Random Field Driven Spatial Complexity at the Mott Transition in VO2

    NASA Astrophysics Data System (ADS)

    Carlson, Erica; Liu, Shuo; Phillabaum, Benjamin; Dahmen, Karin; Vidhyadhiraja, Narsimhamurthy; Qazilbash, Mumtaz; Basov, Dimitri

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

  13. Theoretical model of homogeneous metal-insulator-metal perfect multi-band absorbers for the visible spectrum

    NASA Astrophysics Data System (ADS)

    Kajtár, G.; Kafesaki, M.; Economou, E. N.; Soukoulis, C. M.

    2016-02-01

    We present a rigorous study of the perfect absorption properties of metal-insulator-metal (MIM) structures in the visible spectrum. We provide a derivation (based on the transfer matrix method) and analysis of the conditions for which the perfect absorption occurs. We show that these conditions are fulfilled when the incident wave excites the eigenmodes of the structure. The quantitative analysis allows us to design specific perfect absorbers for our needs. The analytical model is verified by rigorous simulations based on rigorous coupled wave analysis, which demonstrate also the angle and polarization insensitivity of the absorption properties of such a structure. Employing the MIM approach and results, we also investigate and demonstrate multiple perfect absorption bands and broad-band absorption in properly designed multilayer metal-insulator systems.

  14. Observation of the hyperfine structure of the {sup 2}S{sub 1/2}-{sup 2}D{sub 5/2} transition in {sup 87}Sr{sup +}

    SciTech Connect

    Barwood, G.P.; Gao, K.; Gill, P.; Huang, G.; Klein, H.A.

    2003-01-01

    The hyperfine structure of the {sup 2}S{sub 1/2}-{sup 2}D{sub 5/2} quadrupole transition at 674 nm in {sup 87}Sr{sup +} has been observed. The ion was confined in a Paul trap and cooled using laser radiation at 422 and 1092 nm. The quadrupole transition was observed by monitoring quantum jumps in the 422-nm fluorescence. The odd isotope of strontium has 'clock' transitions independent of the first-order Zeeman shift and the {sup 2}D{sub 5/2} state hyperfine structure constants have been determined as A{sub D{sub 5/2}}=2.1743(14) MHz and B{sub D{sub 5/2}}=49.11(6) MHz. Standard uncertainties have been added in parentheses. These values allow the second-order Zeeman shifts to be calculated. The {sup 88}Sr{sup +}-{sup 87}Sr{sup +} isotope shift for the 674-nm quadrupole transition has been measured to be 247.99(4) MHz.

  15. Metal-insulator-metal diodes towards THz and optical energy harvesting: Development of materials design principles

    NASA Astrophysics Data System (ADS)

    Periasamy, Prakash

    Metal-Insulator-Metal (MIM) structures are attractive candidates for high-frequency rectification applications such as THz imaging and sensors, and infrared/visible energy harvesting (rectenna) devices. This thesis develops materials selection principles to guide the choice of material pairs for MIM stacks with desired rectification performance. In particular, a first-of-its kind MIM materials space map is developed that correlates materials properties to rectification performance for different MIM combinations. The materials space diagram is generated based on systematic experimental studies that explore the role of both the metals and the insulator in the MIM stack in determining MIM device performance by evaluating the current-voltage response of a combinatorial set of MIM materials at low frequencies. A novel modified point-contact geometry is developed to rapidly examine a number of MIM material combinations. Material properties such as work function (phiM) of the metals and electron affinity (chi) of the insulator, as well as the thermodynamic chemical stability of the interface are identified as crucial elements for MIM materials selection. Investigations performed to identify the role of metals revealed that it is sufficient to choose the metals such that their Deltaphi is > ~ 300 meV to achieve desired rectification characteristics (high asymmetry and nonlinearity). Using the Nb/Nb2O5 bilayer as the model system, the asymmetry and the nonlinearity were found to be only weakly dependent on Deltaphi above ˜ 0.4 eV. A hypothesis is developed and tested that guides the insulator selection criteria. The proposed hypothesis states that, "to minimize the turn-on voltage and maximize asymmetry and nonlinearity, the electron affinity of the insulator should be close to one of the metal work function values so as to produce a low barrier height". Although the study validated the hypothesis across the material systems studied, preliminary experiments on two

  16. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect

    Bullock, J. Cuevas, A.; Yan, D.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-10-28

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  17. The Langley Stability and Transition Analysis Code (LASTRAC) : LST, Linear and Nonlinear PSE for 2-D, Axisymmetric, and Infinite Swept Wing Boundary Layers

    NASA Technical Reports Server (NTRS)

    Chang, Chau-Lyan

    2003-01-01

    During the past two decades, our understanding of laminar-turbulent transition flow physics has advanced significantly owing to, in a large part, the NASA program support such as the National Aerospace Plane (NASP), High-speed Civil Transport (HSCT), and Advanced Subsonic Technology (AST). Experimental, theoretical, as well as computational efforts on various issues such as receptivity and linear and nonlinear evolution of instability waves take part in broadening our knowledge base for this intricate flow phenomenon. Despite all these advances, transition prediction remains a nontrivial task for engineers due to the lack of a widely available, robust, and efficient prediction tool. The design and development of the LASTRAC code is aimed at providing one such engineering tool that is easy to use and yet capable of dealing with a broad range of transition related issues. LASTRAC was written from scratch based on the state-of-the-art numerical methods for stability analysis and modem software technologies. At low fidelity, it allows users to perform linear stability analysis and N-factor transition correlation for a broad range of flow regimes and configurations by using either the linear stability theory (LST) or linear parabolized stability equations (LPSE) method. At high fidelity, users may use nonlinear PSE to track finite-amplitude disturbances until the skin friction rise. Coupled with the built-in receptivity model that is currently under development, the nonlinear PSE method offers a synergistic approach to predict transition onset for a given disturbance environment based on first principles. This paper describes the governing equations, numerical methods, code development, and case studies for the current release of LASTRAC. Practical applications of LASTRAC are demonstrated for linear stability calculations, N-factor transition correlation, non-linear breakdown simulations, and controls of stationary crossflow instability in supersonic swept wing boundary

  18. Isotope shifts of the 6d{sup 2} D{sub 3/2}-7 p{sup 2} P{sub 1/2} transition in trapped short-lived {sup 209-214}Ra{sup +}

    SciTech Connect

    Giri, G. S.; Versolato, O. O.; Berg, J. E. van den; Boell, O.; Dammalapati, U.; Hoek, D. J. van der; Jungmann, K.; Kruithof, W. L.; Mueller, S.; Nunez Portela, M.; Onderwater, C. J. G.; Santra, B.; Timmermans, R. G. E.; Wansbeek, L. W.; Willmann, L.; Wilschut, H. W.

    2011-08-15

    Laser spectroscopy of short-lived radium isotopes in a linear Paul trap has been performed. The isotope shifts of the 6d{sup 2} D{sub 3/2} -7 p{sup 2} P{sub 1/2} transition in {sup 209-214}Ra{sup +}, which are sensitive to the short-range part of the atomic wave functions, were measured. The results are essential experimental input for improving the precision of atomic structure calculations. This is indispensable for parity violation in Ra{sup +} aiming at the determination of the weak mixing angle.

  19. Transport Properties of 2D-Electron Gas in a InGaAs/GaAs DQW in a Vicinity of Low Magnetic-Field-Induced Insulator-Quantum Hall Liquid Transition

    NASA Astrophysics Data System (ADS)

    Arapov, Yu. G.; Yakunin, M. V.; Gudina, S. V.; Harus, G. I.; Neverov, V. N.; Shelushinina, N. G.; Podgornyh, S. M.; Uskova, E. A.; Zvonkov, B. N.

    2007-04-01

    The resistivity ρ of low mobility dilute 2D-elecron gas in a InGaAs/GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8-70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ℏ > 0.1) for our samples. We observed the coexistence of both the quantum Hall (QH) effect for the filling factors v = 2, 4 and the low magnetic field insulator — QH liquid (with v = 10) transition.

  20. Fingerprints of the field-induced Berezinskii-Kosterlitz-Thouless transition in quasi-two-dimensional quantum magnets

    NASA Astrophysics Data System (ADS)

    Orendáčová, Alžbeta

    The two-dimensional (2d) easy-plane (XY) model provides a prototypical description of 2d systems exhibiting topological excitations, which drive the Berezinskii-Kosterlitz-Thouless (BKT) transition that occurs in 2d superfluids, electron plasmas, Josephson junction arrays, ultracold atomic 2d Bose gasses, etc. The excitations in the 2d XY model are spin waves and vortices. In the BKT scenario, at low temperatures, all vortices (V) and antivortices (AV) are bound to V-AV pairs, and spin waves dominate in this quasi-long-range-ordered phase with an infinite correlation length, ξ, and an algebraic decay of correlations. At a critical temperature, TBKT, the V-AV pairs start to unbind, driving the transition to a free vortex phase above TBKT, characterized by an exponential divergence of ξ. Vortices remain stable also in quantum 2d anisotropic Heisenberg systems with a very weak XY anisotropy. The BKT scenario appears even in 2d isotropic Heisenberg magnets due to frustration or an external magnetic field. I will focus on quasi-2d spin 1/2 Heisenberg antiferromagnets with extremely weak spin anisotropy. These highly anisotropic layered Cu(II) organo-metallic insulators with relatively low saturation fields, about 6 T, enabled a comprehensive study in a wide range of magnetic fields and temperatures. A response of all compounds to the application of a magnetic field mimics 2d behavior with fingerprints of a field-induced Berezinskii-Kosterlitz-Thouless phase transition. ITMS 26220120005, VEGA 1/0143/13 and APVV-14-0073 are acknowledged for a financial support.

  1. Transmission characteristics and transmission line model of a metal-insulator-metal waveguide with a stub modified by cuts.

    PubMed

    Shen, Xinru; Wang, Yueke; Yan, Xin; Yuan, Lin; Sang, Tian

    2016-08-10

    We propose a structure of a metal-insulator-metal (MIM) waveguide with a stub modified by cuts. Our simulation results, conducted by the finite element method, show that the wavelengths of transmission dip vary with the position of the cuts and form the zigzag lines. A transmission line model is also presented, and it agrees with simulation results well. It is believed that our findings provide a smart way to design a plasmonic waveguide filter at the communication region based on MIM structures. PMID:27534492

  2. Anderson transition in ultracold atoms: Signatures and experimental feasibility

    SciTech Connect

    Garcia-Garcia, Antonio M.; Wang Jiao

    2006-12-15

    Kicked rotators with certain nonanalytic potentials avoid dynamical localization and undergo a metal-insulator transition. We show that typical properties of this transition are still present as the nonanalyticity is progressively smoothed out provided that the smoothing is less than a certain limiting value. We have identified a smoothing-dependent time scale such that full dynamical localization is absent and the quantum momentum distribution develops power-law tails with anomalous decay exponents as in the case of a conductor at the metal-insulator transition. We discuss under what conditions these findings may be verified experimentally by using ultracold atom techniques. It is found that ultracold atoms can indeed be utilized for the experimental investigation of the metal-insulator transition.

  3. THE SPITZER c2d SURVEY OF WEAK-LINE T TAURI STARS. III. THE TRANSITION FROM PRIMORDIAL DISKS TO DEBRIS DISKS

    SciTech Connect

    Wahhaj, Zahed; Cieza, Lucas; Koerner, David W.; Case, April; Stapelfeldt, Karl R.; Chapman, Nicholas; Padgett, Deborah L.; Brooke, Tim; Keller, James R.; MerIn, Bruno; Evans, Neal J.; Harvey, Paul; Sargent, Anneila; Van Dishoeck, Ewine F.; Allen, Lori; Blake, Geoff; Mundy, Lee; Myers, Philip C.

    2010-12-01

    We present 3.6 to 70 {mu}m Spitzer photometry of 154 weak-line T Tauri stars (WTTSs) in the Chamaeleon, Lupus, Ophiuchus, and Taurus star formation regions, all of which are within 200 pc of the Sun. For a comparative study, we also include 33 classical T Tauri stars which are located in the same star-forming regions. Spitzer sensitivities allow us to robustly detect the photosphere in the IRAC bands (3.6 to 8 {mu}m) and the 24 {mu}m MIPS band. In the 70 {mu}m MIPS band, we are able to detect dust emission brighter than roughly 40 times the photosphere. These observations represent the most sensitive WTTSs survey in the mid- to far-infrared to date and reveal the frequency of outer disks (r = 3-50 AU) around WTTSs. The 70 {mu}m photometry for half the c2d WTTSs sample (the on-cloud objects), which were not included in the earlier papers in this series, those of Padgett et al. and Cieza et al., are presented here for the first time. We find a disk frequency of 19% for on-cloud WTTSs, but just 5% for off-cloud WTTSs, similar to the value reported in the earlier works. WTTSs exhibit spectral energy distributions that are quite diverse, spanning the range from optically thick to optically thin disks. Most disks become more tenuous than L{sub disk}/L{sub *} = 2 x 10{sup -3} in 2 Myr and more tenuous than L{sub disk}/L{sub *} = 5 x 10{sup -4} in 4 Myr.

  4. The N(^2D - ^4S) 520 nm forbidden doublet transition in the nightglow: An experimental test of the theoretical intensity ratio

    NASA Astrophysics Data System (ADS)

    Slanger, T. G.; Cosby, P. C.; Huestis, D. L.

    2003-04-01

    N(^2D) is an important species in the nighttime ionosphere, as its reaction with O_2 is a principal source of NO. Its modeled concentration peaks near 200 km, at approximately 4 × 10^5 cm-3. Nightglow emission in the optically forbidden lines at 519.8 and 520.0 nm is quite weak, a consequence of the combination of an extremely long radiative lifetime, about 10^5 sec, and quenching by O-atoms, O_2, and N_2. The radiative lifetime is known only from theory, and various calculations lead to a range of possible values for the intensity ratio R = I(519.8)/I(520.0) of 1.5-2.5. On the observational side, Hernandez and Turtle [1969] determined a range of R = 1.3-1.9 in the nightglow, and Sivjee et al. [1981] reported a variable ratio in aurorae, between 1.2 and 1.6. From sky spectra obtained at the Keck II telescope on Mauna Kea, we have accumulated eighty-five 30-60 minute data sets, from March and October, 2000, and April, 2001, over 13 nights of astronomical observations. We find R to have a quite precise value of 1.760± 0.012 (2-σ). There is no difference between the three data sets in terms of the extracted ratio, which therefore seems to be independent of external conditions. At the same time, determination of the O(^1D - ^3P) doublet intensity ratio, I(630.0)/I(636.4), gives a value of 3.03 ± 0.01, the statistical expectation. G. Hernandez and J. P. Turtle, Planet. Space Sci. 17, 675, 1969. G. G. Sivjee, C. S. Deehr, and K. Henricksen, J. Geophys. Res. 86, 1581, 1981.

  5. Highly efficient tunable and localized on-chip electrical plasmon source using protruded metal-insulator-metal structure.

    PubMed

    Phua, Wee Kee; Akimov, Yuriy; Wu, Lin; Chu, Hong Son; Bai, Ping; Danner, Aaron

    2016-05-16

    A compact and highly efficient tunable and localized source of propagating surface plasmon-polaritons is proposed based on a protruded metal-insulator-metal (pMIM) structure. The protrusion along a segment of the pMIM forms a nanometer gap and allows a low voltage bias to generate a localized tunneling current. The tunneling current excited plasmons can be fully coupled to the metal-insulator-metal (MIM) waveguiding segment of the pMIM without leakage and propagate a long distance as the gap in the MIM waveguiding segment is much larger than the gap in the protruded segment of the pMIM. Eigenmode and numerical analyses show that by using MIM structures as a benchmark, the pMIM structure enhances the total amount of average power that is transferred from the tunneling current into the excitation of intrinsic eigenmodes of the MIM waveguiding segment. Depending on the magnitude of the applied voltage bias, the pMIM structure supports single, dual and multi modes for a typical Au-SiO2-Au design with a 500 nm-thick SiO2. Among all excited modes, the single mode operation allows highly efficient excitation of long travelling surface plasmon-polaritons (SPPs) of up to 30 µm. The electrical excitation of SPPs using pMIM structures opens up the possibility of integrating plasmon sources into nanoscale optoelectronic circuits to facilitate on-chip data communications.

  6. Highly efficient tunable and localized on-chip electrical plasmon source using protruded metal-insulator-metal structure.

    PubMed

    Phua, Wee Kee; Akimov, Yuriy; Wu, Lin; Chu, Hong Son; Bai, Ping; Danner, Aaron

    2016-05-16

    A compact and highly efficient tunable and localized source of propagating surface plasmon-polaritons is proposed based on a protruded metal-insulator-metal (pMIM) structure. The protrusion along a segment of the pMIM forms a nanometer gap and allows a low voltage bias to generate a localized tunneling current. The tunneling current excited plasmons can be fully coupled to the metal-insulator-metal (MIM) waveguiding segment of the pMIM without leakage and propagate a long distance as the gap in the MIM waveguiding segment is much larger than the gap in the protruded segment of the pMIM. Eigenmode and numerical analyses show that by using MIM structures as a benchmark, the pMIM structure enhances the total amount of average power that is transferred from the tunneling current into the excitation of intrinsic eigenmodes of the MIM waveguiding segment. Depending on the magnitude of the applied voltage bias, the pMIM structure supports single, dual and multi modes for a typical Au-SiO2-Au design with a 500 nm-thick SiO2. Among all excited modes, the single mode operation allows highly efficient excitation of long travelling surface plasmon-polaritons (SPPs) of up to 30 µm. The electrical excitation of SPPs using pMIM structures opens up the possibility of integrating plasmon sources into nanoscale optoelectronic circuits to facilitate on-chip data communications. PMID:27409887

  7. Effect of Initial Conditions on 2D Rayleigh-Taylor Instability and Transition to Turbulence in Planar Blast-wave-driven Systems

    SciTech Connect

    Miles, A R; Edwards, M J; Greenough, J A

    2004-03-26

    Perturbations on an interface driven by a strong blast wave grow in time due to a combination of Rayleigh-Taylor, Richtmyer-Meshkov, and decompression effects. In this paper, we present the first results from a computational study of such a system under drive conditions to be attainable on the National Ignition Facility. Using the multiphysics, AMR, higher order Godunov Eulerian hydrocode, Raptor, we consider the late nonlinear instability evolution for multiple amplitude and phase realizations of a variety of multimode spectral types. We show that compressibility effects preclude the emergence of a regime of self-similar instability growth independent of the initial conditions by allowing for memory of the initial conditions to be retained in the mix width at all times. The loss of transverse spectral information is demonstrated, however, along with the existence of a quasi-self-similar regime over short time intervals. Certain aspects of the initial conditions, including the rms amplitude, are shown to have a strong effect on the time to transition to the quasi-self-similar regime.

  8. Aniso2D

    2005-07-01

    Aniso2d is a two-dimensional seismic forward modeling code. The earth is parameterized by an X-Z plane in which the seismic properties Can have monoclinic with x-z plane symmetry. The program uses a user define time-domain wavelet to produce synthetic seismograms anrwhere within the two-dimensional media.

  9. Towards 2D nanocomposites

    NASA Astrophysics Data System (ADS)

    Jang, Hyun-Sook; Yu, Changqian; Hayes, Robert; Granick, Steve

    2015-03-01

    Polymer vesicles (``polymersomes'') are an intriguing class of soft materials, commonly used to encapsulate small molecules or particles. Here we reveal they can also effectively incorporate nanoparticles inside their polymer membrane, leading to novel ``2D nanocomposites.'' The embedded nanoparticles alter the capacity of the polymersomes to bend and to stretch upon external stimuli.

  10. Mesh2d

    2011-12-31

    Mesh2d is a Fortran90 program designed to generate two-dimensional structured grids of the form [x(i),y(i,j)] where [x,y] are grid coordinates identified by indices (i,j). The x(i) coordinates alone can be used to specify a one-dimensional grid. Because the x-coordinates vary only with the i index, a two-dimensional grid is composed in part of straight vertical lines. However, the nominally horizontal y(i,j0) coordinates along index i are permitted to undulate or otherwise vary. Mesh2d also assignsmore » an integer material type to each grid cell, mtyp(i,j), in a user-specified manner. The complete grid is specified through three separate input files defining the x(i), y(i,j), and mtyp(i,j) variations.« less

  11. Transition state theory thermal rate constants and RRKM-based branching ratios for the N((2)D) + CH(4) reaction based on multi-state and multi-reference ab initio calculations of interest for the Titan's chemistry.

    PubMed

    Ouk, Chanda-Malis; Zvereva-Loëte, Natalia; Scribano, Yohann; Bussery-Honvault, Béatrice

    2012-10-30

    Multireference single and double configuration interaction (MRCI) calculations including Davidson (+Q) or Pople (+P) corrections have been conducted in this work for the reactants, products, and extrema of the doublet ground state potential energy surface involved in the N((2)D) + CH(4) reaction. Such highly correlated ab initio calculations are then compared with previous PMP4, CCSD(T), W1, and DFT/B3LYP studies. Large relative differences are observed in particular for the transition state in the entrance channel resolving the disagreement between previous ab initio calculations. We confirm the existence of a small but positive potential barrier (3.86 ± 0.84 kJ mol(-1) (MR-AQCC) and 3.89 kJ mol(-1) (MRCI+P)) in the entrance channel of the title reaction. The correlation is seen to change significantly the energetic position of the two minima and five saddle points of this system together with the dissociation channels but not their relative order. The influence of the electronic correlation into the energetic of the system is clearly demonstrated by the thermal rate constant evaluation and it temperature dependance by means of the transition state theory. Indeed, only MRCI values are able to reproduce the experimental rate constant of the title reaction and its behavior with temperature. Similarly, product branching ratios, evaluated by means of unimolecular RRKM theory, confirm the NH production of Umemoto et al., whereas previous works based on less accurate ab initio calculations failed. We confirm the previous findings that the N((2)D) + CH(4) reaction proceeds via an insertion-dissociation mechanism and that the dominant product channels are CH(2)NH + H and CH(3) + NH.

  12. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

    SciTech Connect

    Wang, Lijuan Song, Xiaofeng; Liu, Xin; Zhang, Long; Li, Yiping; Yan, Donghang

    2013-12-09

    We have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiN{sub x}) as gate insulator. The VOPc/p-6P/SiN{sub x} devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/ p-6P devices with SiN{sub x} insulator hold a great promise of application in flexible displays.

  13. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  14. Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal-insulator-metal and similar devices.

    PubMed

    Diesing, Detlef; Hasselbrink, Eckart

    2016-07-01

    Metal heterostructures have been used in recent years to gain insights into the relevance of energy dissipation into electronic degrees of freedom in surface chemistry. Non-adiabaticity in the surface chemistry results in the creation of electron-hole pairs, the number and energetic distribution of which need to be studied in detail. Several types of devices, such as metal-insulator-metal, metal-semiconductor and metal-semiconductor oxide-semiconductor, have been used. These devices operate by spatially separating the electrons from the holes, as an internal barrier allows only - or at least favours - transport from the top to the back electrode for one kind of carrier. An introduction into the matter, a survey of the literature and a critical discussion of the state of research is attempted. PMID:27186600

  15. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  16. Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors

    SciTech Connect

    Devynck, M.; Rostirolla, B.; Watson, C. P.; Taylor, D. M.

    2014-11-03

    Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT:PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface.

  17. Significantly increased surface plasmon polariton mode excitation using a multilayer insulation structure in a metal-insulator-metal plasmonic waveguide.

    PubMed

    Yang, Hongyan; Li, Jianqing; Xiao, Gongli

    2014-06-10

    In this paper, we propose a novel multilayer insulation structure in a metal-insulator-metal (MIM) plasmonic waveguide to explore the possibility of increasing surface plasmon polariton (SPP) mode excitation. Numerical investigations show that the effective refractive index of the multilayer insulation structure affects symmetric SPP mode excitation. The significant enhancement of electric field intensity in horizontal and vertical profiles with a dipole in SiO2 compared with in Al2O3 is observed in the proposed MIM plasmonic waveguides due to a combination of the improved optical density and dipole radiation intensities under a low refractive index. The Au/SiO2/Al2O3/SiO2/Au geometry shows the best enhancement performances, which can serve as an excellent guideline for designing and optimizing a high-performance SPP source using a multilayer insulation structure.

  18. A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement

    NASA Astrophysics Data System (ADS)

    Lue, Hang-Ting; Tseng, Tseung-Yuen; Huang, Guo-Wei

    2002-04-01

    We have developed a method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. Ba0.5Sr0.5TiO3 (BST) thin films were deposited on 10 Ω cm (normal) and 10 k Ω cm [high-resistivity, (HR)] silicon substrates at the same time by rf magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with thru-reflect-line calibration while capacitance (C-V) measurements were carried out for BST/normal silicon. From the phase change of CPW transmission line and the maximum capacitance in C-V measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were investigated. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal-insulator-semiconductor structures.

  19. Disorder and the Metal-Insulator Crossover in Pr2-xCexCuO4-y

    NASA Astrophysics Data System (ADS)

    Bach, P. L.; Yu, W.; Higgins, J. S.; Xu, H.; Greene, R. L.; Weaver, B.

    2008-03-01

    One of the outstanding issues in the electron doped cuprates is the role that oxygenation plays in the superconductivity and normal state properties. Oxygen addition can be considered both a doping and a disordering process. To disentangle these two effects, disorder can be introduced by irradiating the samples without altering doping. We report transport studies on optimal and underdoped Pr2-xCexCuO4-y films subject to proton irradiation and oxygenation. We establish a correlation between the static AFM and the metal-insulator crossover. Our separation of the disorder and doping effects also shed light on oxygen reduction effects in electron-doped cuprates. Supported by NSF grant DMR-0653535.

  20. Fano Resonance Based on Metal-Insulator-Metal Waveguide-Coupled Double Rectangular Cavities for Plasmonic Nanosensors

    PubMed Central

    Zhang, Zhidong; Luo, Liang; Xue, Chenyang; Zhang, Wendong; Yan, Shubin

    2016-01-01

    A refractive index sensor based on metal-insulator-metal (MIM) waveguides coupled double rectangular cavities is proposed and investigated numerically using the finite element method (FEM). The transmission properties and refractive index sensitivity of various configurations of the sensor are systematically investigated. An asymmetric Fano resonance lineshape is observed in the transmission spectra of the sensor, which is induced by the interference between a broad resonance mode in one rectangular and a narrow one in the other. The effect of various structural parameters on the Fano resonance and the refractive index sensitivity of the system based on Fano resonance is investigated. The proposed plasmonic refractive index sensor shows a maximum sensitivity of 596 nm/RIU. PMID:27164101

  1. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    NASA Astrophysics Data System (ADS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  2. High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors

    NASA Astrophysics Data System (ADS)

    Colón, Albert; Shi, Junxia

    2014-09-01

    High-κ insulating materials (HfO2, HfO2/Al2O3, HfAlOx, and HfSiOx) were deposited by atomic layer deposition (ALD) on AlGaN/GaN to form Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors (MISHFETs) and were electrically and structurally characterized. The objective of this study is to characterize the interface quality and correlate the results with electrical phenomena for each insulating material. Although there are many studies using HfO2 and Al2O3 on AlGaN, there is limited experimental data using ternary compounds such as HfAlOx or HfSiOx, compared to their binary counterparts. In this work, interface trap density, Dit, was extracted by the conductance method using on-chip metal-insulator-semiconductor heterostructure capacitors (MISHCAPs). HfO2 was measured to have the lowest trap density at low energies on the order of 1012 cm-2 eV-1 and quickly reduced about one order of magnitude less than the others at higher trap energies. HfO2/Al2O3, HfAlOx, and HfSiOx all had similar trap densities on the order of 1012 cm-2 eV-1. Ultra-low gate leakage levels were achieved, especially for HfAlOx on the orders of 10-12 A/mm. Our studies indicate that HfAlOx provides the best electrical characteristics such as lowest gate leakage current, largest channel carrier density and resistance to self-heating effects without the vulnerability to low crystallization temperatures.

  3. Unparticle example in 2D.

    PubMed

    Georgi, Howard; Kats, Yevgeny

    2008-09-26

    We discuss what can be learned about unparticle physics by studying simple quantum field theories in one space and one time dimension. We argue that the exactly soluble 2D theory of a massless fermion coupled to a massive vector boson, the Sommerfield model, is an interesting analog of a Banks-Zaks model, approaching a free theory at high energies and a scale-invariant theory with nontrivial anomalous dimensions at low energies. We construct a toy standard model coupling to the fermions in the Sommerfield model and study how the transition from unparticle behavior at low energies to free particle behavior at high energies manifests itself in interactions with the toy standard model particles.

  4. 2D materials for nanophotonic devices

    NASA Astrophysics Data System (ADS)

    Xu, Renjing; Yang, Jiong; Zhang, Shuang; Pei, Jiajie; Lu, Yuerui

    2015-12-01

    Two-dimensional (2D) materials have become very important building blocks for electronic, photonic, and phononic devices. The 2D material family has four key members, including the metallic graphene, transition metal dichalcogenide (TMD) layered semiconductors, semiconducting black phosphorous, and the insulating h-BN. Owing to the strong quantum confinements and defect-free surfaces, these atomically thin layers have offered us perfect platforms to investigate the interactions among photons, electrons and phonons. The unique interactions in these 2D materials are very important for both scientific research and application engineering. In this talk, I would like to briefly summarize and highlight the key findings, opportunities and challenges in this field. Next, I will introduce/highlight our recent achievements. We demonstrated atomically thin micro-lens and gratings using 2D MoS2, which is the thinnest optical component around the world. These devices are based on our discovery that the elastic light-matter interactions in highindex 2D materials is very strong. Also, I would like to introduce a new two-dimensional material phosphorene. Phosphorene has strongly anisotropic optical response, which creates 1D excitons in a 2D system. The strong confinement in phosphorene also enables the ultra-high trion (charged exciton) binding energies, which have been successfully measured in our experiments. Finally, I will briefly talk about the potential applications of 2D materials in energy harvesting.

  5. Statistical and electrical properties of the conduction electrons of a metal nanosphere in the region of metal-insulator transition.

    PubMed

    Datsyuk, Vitaly V; Ivanytska, Iryna V

    2014-01-01

    Statistical and electrical properties of the conduction electrons of a silver or gold sphere with a radius from 1 to 2 nm are shown to differ drastically from the properties of electrons in a bulk metal sample. If the radius of a noble metal sphere decreases from 10 to 1 nm, its conductivity oscillates around the bulk metal value with increasing amplitude and drops at the 'magic' numbers of electrons. These numbers are equal to 186, 198, 254, 338, 440, 556, 676, 832, 912, 1,284, 1,502, and 1,760, in agreement with various experimental data. We show that the conductivity and capacitance of a metal nanosphere can be changed by several orders of magnitude by adding or removing just a few electrons.

  6. Statistical and electrical properties of the conduction electrons of a metal nanosphere in the region of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Datsyuk, Vitaly V.; Ivanytska, Iryna V.

    2014-04-01

    Statistical and electrical properties of the conduction electrons of a silver or gold sphere with a radius from 1 to 2 nm are shown to differ drastically from the properties of electrons in a bulk metal sample. If the radius of a noble metal sphere decreases from 10 to 1 nm, its conductivity oscillates around the bulk metal value with increasing amplitude and drops at the 'magic' numbers of electrons. These numbers are equal to 186, 198, 254, 338, 440, 556, 676, 832, 912, 1,284, 1,502, and 1,760, in agreement with various experimental data. We show that the conductivity and capacitance of a metal nanosphere can be changed by several orders of magnitude by adding or removing just a few electrons.

  7. Statistical and electrical properties of the conduction electrons of a metal nanosphere in the region of metal-insulator transition.

    PubMed

    Datsyuk, Vitaly V; Ivanytska, Iryna V

    2014-01-01

    Statistical and electrical properties of the conduction electrons of a silver or gold sphere with a radius from 1 to 2 nm are shown to differ drastically from the properties of electrons in a bulk metal sample. If the radius of a noble metal sphere decreases from 10 to 1 nm, its conductivity oscillates around the bulk metal value with increasing amplitude and drops at the 'magic' numbers of electrons. These numbers are equal to 186, 198, 254, 338, 440, 556, 676, 832, 912, 1,284, 1,502, and 1,760, in agreement with various experimental data. We show that the conductivity and capacitance of a metal nanosphere can be changed by several orders of magnitude by adding or removing just a few electrons. PMID:24716454

  8. Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

    NASA Astrophysics Data System (ADS)

    Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

    2016-03-01

    A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

  9. Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

    SciTech Connect

    Shen, Xuan; Qiu, Xiangbiao; Su, Dong; Zhou, Shengqiang; Li, Aidong; Wu, Di

    2015-01-06

    Transport characteristics of ultrathin SrRuO₃ films, deposited epitaxially on TiO₂-terminated SrTiO₃ (001) single-crystal substrates, were studied as a function of film thickness. Evolution from a metallic to an insulating behavior is observed as the film thickness decreases from 20 to 4 unit cells. In films thicker than 4 unit cells, the transport behavior obeys the Drude low temperature conductivity with quantum corrections, which can be attributed to weak localization. Fitting the data with 2-dimensional localization model indicates that electron-phonon collisions are the main inelastic relaxation mechanism. In the film of 4 unit cells in thickness, the transport behavior follows variable range hopping model, indicating a strongly localized state. As a result, magnetoresistance measurements reveal a likely magnetic anisotropy with the magnetic easy axis along the out-of-plane direction.

  10. Pressure dependence of metal-insulator transition in perovskites RNiO3 ( R=Eu , Y, Lu)

    NASA Astrophysics Data System (ADS)

    Cheng, J.-G.; Zhou, J.-S.; Goodenough, J. B.; Alonso, J. A.; Martinez-Lope, M. J.

    2010-08-01

    High-pressure experiments on the RNiO3 perovskites with smaller rare-earth R3+ ions complete our study of the crossover from itinerant to localized e -electron behavior associated with the low-spin Ni(III):t6e1 ion. By measuring second-sintered samples in a multianvil module, we have observed a clear anomaly of ρ(T) at TIM and obtained the pressure dependence of TIM for the RNiO3 ( R=Eu , Y, Lu) that are different from the published data supporting a charge-ordering model. Instead, they are comparable to that for the orbital-ordering insulator LaMnO3 . Our distinct results show clearly that where the crossover is approached from the localized-electron side by increasing the orbital overlap integral, a cooperative Jahn-Teller distortion prevents charge transfer from molecular e orbitals on strongly bonded NiO6/2 clusters to more weakly bonded Ni(III) centers. However, where the crossover is approached from the itinerant-electron side as in the perovskite CaFeO3 , a disproportionation charge transfer may occur. In a separate experiment in which the powder samples were pressed in a Bridgman anvil device without a pressure medium, we have shown after releasing pressure that the samples were reduced. This irreversible effect should be distinguished from the hydrostatic-pressure effect on the physical properties of the RNiO3 perovskites.

  11. A Self-Emissivity-Controlling Radiator for Spacecrafts by Making Use of a Metal-Insulator Transition in Magnetoresistive Manganites

    NASA Astrophysics Data System (ADS)

    Tanaka, Kohsuke; Tachikawa, Sumitaka; Kuwahara, Hideki; Okawa, Mario; Saitoh, Tomohiko

    A self-emissivity-controlling radiator named SRD (Smart Radiation Device) is one of the next generation thermal control materials for spacecrafts. It is a light ceramic tile that changes its infrared emissivity according to its own Temperature (T). This radiation property keeps the T and decreases the heater power of spacecraft. In order to improve the radiation property of SRD, we have studied various compositions. In this paper, we discuss how we can design an improved SRD and report the results of our compositional survey.

  12. Precision measurement of the 5 {sup 2}S{sub 1/2}- 4 {sup 2}D{sub 5/2} quadrupole transition isotope shift between {sup 88}Sr{sup +} and {sup 86}Sr{sup +}

    SciTech Connect

    Lybarger, Warren E. Jr.; Berengut, Julian C.; Chiaverini, John

    2011-05-15

    We present a high-precision measurement of the isotope shift of the narrow quadrupole-allowed 5 {sup 2}S{sub 1/2}- 4 {sup 2}D{sub 5/2} transition in {sup 86}Sr{sup +} relative to the most abundant isotope {sup 88}Sr{sup +}. This was accomplished using high-resolution laser spectroscopy of individual trapped ions, and the measured shift is {Delta}{nu}{sub meas}{sup 88,86}=570.281(4) MHz. We also tested a recently developed and successful method for ab initio calculation of isotope shifts in alkali-metal-like atomic systems against this measurement, and our initial result of {Delta}{nu}{sub calc}{sup 88,86}=457(28) MHz is also presented. While the measurement and the calculation are in broad agreement, there is a clear discrepancy between them, and we believe that the specific mass shift was underestimated in our calculation. Our measurement provides a stringent test for further refinements of theoretical isotope shift calculation methods for atomic systems with a single valence electron.

  13. Two-dimensional trilayer grating with a metal/insulator/metal structure as a thermophotovoltaic emitter.

    PubMed

    Song, Jinlin; Si, Mengting; Cheng, Qiang; Luo, Zixue

    2016-02-20

    A thermophotovoltaic system that converts thermal energy into electricity has considerable potential for applications in energy utilization fields. However, intensive emission in a wide spectral and angular range remains a challenge in improving system efficiency. This study proposes the use of a 2D trilayer grating with a tungsten/silica/tungsten (W/SiO2/W) structure on a tungsten substrate as a thermophotovoltaic emitter. The finite-difference time-domain method is employed to simulate the radiative properties of the proposed structure. A broadband high emittance with an average spectral emittance of 0.953 between 600 and 1800 nm can be obtained for both transverse magnetic and transverse electric polarized waves. On the basis of the inductance-capacitance circuit model and dispersion relation analyses, this phenomenon is mainly considered as the combined contribution of surface plasmon polaritons and magnetic polaritons. A parametric study is also conducted on the emittance spectrum of the proposed structure, considering geometric parameters, polar angles, and azimuthal angles for both TM and TE waves. The study demonstrates that the emitter has good wavelength selectivity and polarization insensitivity in a wide geometric and angular range.

  14. Two-dimensional trilayer grating with a metal/insulator/metal structure as a thermophotovoltaic emitter.

    PubMed

    Song, Jinlin; Si, Mengting; Cheng, Qiang; Luo, Zixue

    2016-02-20

    A thermophotovoltaic system that converts thermal energy into electricity has considerable potential for applications in energy utilization fields. However, intensive emission in a wide spectral and angular range remains a challenge in improving system efficiency. This study proposes the use of a 2D trilayer grating with a tungsten/silica/tungsten (W/SiO2/W) structure on a tungsten substrate as a thermophotovoltaic emitter. The finite-difference time-domain method is employed to simulate the radiative properties of the proposed structure. A broadband high emittance with an average spectral emittance of 0.953 between 600 and 1800 nm can be obtained for both transverse magnetic and transverse electric polarized waves. On the basis of the inductance-capacitance circuit model and dispersion relation analyses, this phenomenon is mainly considered as the combined contribution of surface plasmon polaritons and magnetic polaritons. A parametric study is also conducted on the emittance spectrum of the proposed structure, considering geometric parameters, polar angles, and azimuthal angles for both TM and TE waves. The study demonstrates that the emitter has good wavelength selectivity and polarization insensitivity in a wide geometric and angular range. PMID:26906580

  15. 2d index and surface operators

    NASA Astrophysics Data System (ADS)

    Gadde, Abhijit; Gukov, Sergei

    2014-03-01

    In this paper we compute the superconformal index of 2d (2, 2) supersymmetric gauge theories. The 2d superconformal index, a.k.a. flavored elliptic genus, is computed by a unitary matrix integral much like the matrix integral that computes the 4d superconformal index. We compute the 2d index explicitly for a number of examples. In the case of abelian gauge theories we see that the index is invariant under flop transition and under CY-LG correspondence. The index also provides a powerful check of the Seiberg-type duality for non-abelian gauge theories discovered by Hori and Tong. In the later half of the paper, we study half-BPS surface operators in = 2 super-conformal gauge theories. They are engineered by coupling the 2d (2, 2) supersymmetric gauge theory living on the support of the surface operator to the 4d = 2 theory, so that different realizations of the same surface operator with a given Levi type are related by a 2d analogue of the Seiberg duality. The index of this coupled system is computed by using the tools developed in the first half of the paper. The superconformal index in the presence of surface defect is expected to be invariant under generalized S-duality. We demonstrate that it is indeed the case. In doing so the Seiberg-type duality of the 2d theory plays an important role.

  16. Design and fabrication of a high-density multilayer metal-insulator-metal capacitor based on selective etching

    SciTech Connect

    Tseng, VFG; Xie, H

    2013-02-06

    This paper presents a novel and cost-effective method for fabricating high-density multilayer metal-insulator-metal (MIM) integrated capacitors. To eliminate the usage of numerous photolithography steps when parallel stacking multiple capacitors layers, a unique process has been developed based on depositing the MIM layers onto a substrate with two protruding pillars, polishing down the pillars to expose the multilayer cross sections and then selectively etching the metal layers on each pillar to form the alternating capacitor plate electrodes. For demonstration purpose, only capacitors with two dielectric layers were fabricated, and the measurement results were verified by a compact analytical model together with finite element simulations. With 200 nm thick silicon nitride/oxide dielectric layers, a capacitance density of 0.6 fF mu m(-2) was achieved, which can be easily increased by scaling down the layer thicknesses and/or stacking more layers. A low equivalent series resistance (ESR) of 300-700 m Omega was measured, and the self-resonance frequency was above measurement limits (> 100 MHz). Further design optimization shows that the ESR can be reduced to below 80 m Omega, while the operation frequency extended to above 2.6 GHz.

  17. Structurally-tolerant vertical directional coupling between metal-insulator-metal plasmonic waveguide and silicon dielectric waveguide.

    PubMed

    Li, Qiang; Qiu, Min

    2010-07-19

    Vertical directional coupling between a metal-insulator-metal (MIM) plasmonic waveguide and a conventional dielectric waveguide is investigated. The coupling length, extinction ratio, insertion loss and coupling efficiency of the hybrid coupler are analyzed. As an example, when the separation between the two waveguides is 250 nm, a maximum coupling efficiency of 73%, an insertion loss of -1.4 dB and an extinction ratio of 16 dB can be achieved at a coupling length of 4.5 microm at 1.55 microm wavelength. A particular feature of this hybrid coupler is that it is highly tolerant to the structural parameters of the plasmonic waveguide and the misalignment between the two waveguides. The performance of this hybrid coupler as a TM polarizer is also analyzed and a maximum extinction ratio of 44 dB and an insertion loss of -0.18 dB can be obtained. The application of this hybrid coupler includes the signal routing between plasmonic waveguides and dielectric waveguides in photonic integrated circuits and the polarization control between TE and TM modes. In addition, it provides an approach for efficiently exciting MIM plasmonic modes with conventional dielectric modes.

  18. Fano response induced by the interference between localized plasmons and interface reflections in metal-insulator-metal waveguide structure

    NASA Astrophysics Data System (ADS)

    Li, Hong-Ju; Wang, Ling-Ling; Zhai, Xiang

    2016-06-01

    The original Fano response induced by the interference between the localized plasmons and interface-reflected surface plasmon polaritons in a single metal-insulator-metal waveguide with two parallel separated metal strips is predicted theoretically through the coupled mode theory combined with the Fano function. The prominent asymmetric line shape resulting from the coupling between the discrete dipole resonance formed between metal strips and an interface-reflected-induced continuum is confirmed by the performed numerical simulations. The novel Fano spectrum is tuned easily by varying the length and coupling distance of metal strips. By introducing another separated metal strip, the outstanding double Fano behavior is obtained, and the corresponding underlying physics is illustrated. In particular, based on the performed refractive index sensing spectra, the high sensitivity of 855 nm/RIU and figure of merit up to 30 are achieved via the double Fano resonance. Undoubtedly, such ingenious structure may benefit the fabrications of nano-integrated plasmonic devices for optical switching and sensing.

  19. Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

    NASA Technical Reports Server (NTRS)

    Ho, Fat Duen

    1996-01-01

    Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

  20. Mass-productive fabrication of a metal-insulator-metal plasmon waveguide with a linear taper for nanofocusing

    NASA Astrophysics Data System (ADS)

    Wongpanya, Kruawan; Kasaya, Takeshi; Miyazaki, Hideki T.; Oosato, Hirotaka; Sugimoto, Yoshimasa; Pijitrojana, Wanchai

    2016-09-01

    The fabrication of a metal-insulator-metal plasmon waveguide with a linear taper is reported. Highly efficient nanofocusing of light with a Au-SiO2-Au waveguide with a three-dimensional taper had been demonstrated. However, conventional vertical taper structures were fabricated with a low-throughput process based on electron beam scanning. We propose an efficient, mass-productive fabrication process using a standard dry etching technique. A key improvement is the employment of a mixed gas of CHF3 and O2. By optimizing the gas composition and the cooling process of the substrate, a SiO2 vertical taper with an angle of 19°, which is very close to the optimum 20°, was successfully produced. At the tip section, an ultra-thin waveguide as thin as 5.6 nm, only one-third of the conventional demonstration, is reproducibly realized by the employment of an atomic layer deposition of Al2O3. Coupling efficiency as high as 72 % numerically demonstrated.

  1. Pt-Ti-O gate silicon-metal-insulator-semiconductor field-effect transistor hydrogen gas sensors in harsh environments

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Ueda, Kazuhiro; Nambu, Akira; Yoneyama, Akio; Kikuchi, Yota; Watanabe, Atsushi

    2016-06-01

    The influence of radiation damages to developed hydrogen gas sensor chips from γ-rays (60Co) and/or X-rays (synchrotron radiation) is manageably avoided for sensor operations even at extremely high integral doses such as 1.8 and/or 18 MGy. Platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistor (Si-MISFET) hydrogen gas sensors can work stably as hydrogen sensors up to about 270 °C and also show environmental hardness as follows: When nitrogen-diluted 10-ppm hexamethyldisiloxane (HMDS) was exposed to the sensor FETs for 40 min at a working temperature of 115 °C, large sensing amplitude (ΔV g) changed little within repetition errors before and after HMDS exposures. The variations of ΔV g among relative humidity of 20 and 80% are very small within ±4.4% around 50% under 40 °C atmosphere. The Pt-Ti-O sensors have been found to show large ΔV g of 624.4 mV with σΔV g of 7.27 mV for nine times repeated measurements under nitrogen-diluted 1.0%-hydrogen gas, which are nearly the same values of 654.5 mV with σΔV g of 3.77 mV under air-diluted 1.0%-hydrogen gas.

  2. Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Matsumoto, T.; Shibata, N.; Ikuhara, Y.; Koide, Y.

    2015-09-01

    Normally on/off operation in hydrogenated diamond (H-diamond) metal-insulator-semiconductor field-effect transistors (MISFETs) is reproducibly controlled by annealing at 180 °C. The transfer characteristics of the MISFETs reveal that the threshold gate voltage changes from 0.8 ± 0.1 to -0.5 ± 0.1 V after annealing, which indicates the MISFETs switch from normally on to normally off operation. Annealing also shifts the flat-band voltage in the capacitance-voltage curve of MIS capacitors from zero to -0.47 V. The mechanism behind the switch of normally on/off characteristics induced by annealing is explained by a change of transfer doping as follows. Adsorbed acceptors at the insulator/H-diamond interface allow the holes to accumulate in the H-diamond channel layer, so the MISFETs before annealing show normally on characteristics. Annealing causes loss of the adsorbed acceptors or provides compensatory positive charge in the insulator oxide, so the hole density in the H-diamond channel layer decreases markedly, and the MISFETs show normally off characteristics.

  3. Fabrication of Buried Co-Planar Metal-Insulator-Metal Nanojunctions with a Gap Lower than 10nm

    NASA Astrophysics Data System (ADS)

    Rousset, V.; Joachim, C.; Itoua, S.; Rousset, B.; Fabre, N.

    1995-12-01

    An improvement of a process to fabricate co-planar metal-insulator-metal nanojunctions is presented to reach a gap length much lower than 10 nm using a 20 keV e-beam and an AuPd lift-off. The electrodes of the nanojunction are less than 100 nm in width and are buried in the SiO2 substrate. For the 8 nm nanojunctions, the gap is still filled with SiO2 if care is taken about the SiO2 etching step of the process. Un procédé de fabrication est proposé pour obtenir des nanojonctions métal-isolant-métal co-planaires d'une largeur d'isolant bien inférieure à 10nm en utilisant un masqueur électronique à 20keV et un “lift-off” à l'or-palladium. Les électrodes de la nanojonction enterrées dans la silice ont une largeur de moins de 100nm et sont distantes de 8nm. En optimisant l'étape de sous gravure, il est possible de conserver de la silice comme isolant entre les électrodes.

  4. Impact of graphene-graphite films on electrical properties of Al2O3 metal-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Choi, Kyeong-Keun; Kee, Jong; Park, Chan-Gyung; Kim, Deok-kee

    2016-08-01

    The diffusion barrier property of directly grown graphene-graphite films between Al2O3 films and Si substrates was evaluated using metal-insulator-semiconductor (MIS) structures. The roughness, morphology, sheet resistance, Raman spectrum, chemical composition, and breakdown field strength of the films were investigated after rapid thermal annealing. About 2.5-nm-thick graphene-graphite films effectively blocked the formation of the interfacial layer between Al2O3 films and Si, which was confirmed by the decreased breakdown field strength of graphene-graphite film structures. After annealing at 975 °C for 90 s, the increase in the mean breakdown field strength of the structure with the ˜2.5-nm-thick graphene-graphite film was about 91% (from 8.7 to 16.6 MV/cm), while that without the graphene-graphite film was about 187% (from 11.2 to 32.1 MV/cm). Si atom diffusion into Al2O3 films was reduced by applying the carbon-based diffusion barrier.

  5. Nonlinear Metal-Insulator-Metal (MIM) Nanoplasmonic Waveguides Based on Electron Tunneling for Optical Rectification and Frequency Generation

    NASA Astrophysics Data System (ADS)

    Lei, Xiaoqin

    Metal-Insulator-Metal (MIM) electron tunneling diodes have recently emerged as an attractive alternative to semiconductor photodiodes for THz and optical detection due to their fast response time and relative ease of fabrication. However, current antenna-coupled MIM diode detectors are still limited by poor responsivity and low detection bandwidth due to impedance mismatch between the diode and antenna, large RC time constant of lumped MIM junctions, and narrow bandwidth of traditional antenna designs. In this thesis we address these issues by considering traveling-wave MIM detector designs which exhibit enhanced responsivity and low impedance that can be more easily matched to planar antennas. We also propose new antenna geometries based on surface modification of traditional bowtie antennas that are capable of receiving ultra-wideband THz signals. The concept of traveling-wave MIM detectors is then extended to the investigation of nonlinear MIM nanoplasmonic waveguides for on-chip single-cycle THz pulse generation, frequency conversion, as well as plasmonic switching and modulation.

  6. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    SciTech Connect

    Pandey, Sumeet C. Meade, Roy; Sandhu, Gurtej S.

    2015-02-07

    We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  7. Electro-Mechanical Properties of Metal-Insulator-Metal Device Fabricated on Polymer Substrate Using Low-Temperature Process

    NASA Astrophysics Data System (ADS)

    Park, Sung Kyu; Han, Jeong In; Kim, Won Keun; Hong, Sung Jei; Kwak, Min Gi; Lee, Myung Jae; Chung, Kwan Soo

    2002-02-01

    High-performance metal-insulator-metal (MIM) devices on flexible polymer substrates were successfully fabricated without any defects such as cracks, delamination and blistering. This work examines the mechanical and electrical properties of MIM devices constructed using anodic Ta2O5 films. Using newly developed methods including stepped heating process and low-temperature post-annealing below 180°C, we obtained high-performances MIM devices on polymer substrates. Here, we propose the use of stacked bottom electrode and water barrier layer in order to enhance the ductility of the Ta electrode and to prevent blistering problems, respectively. Rutherford backscattering spectroscopy (RBS), auger electron spectroscopy (AES) and transmission electronic microscope (TEM) observations were performed for the structural investigation of the MIM devices on polymer substrates. Electrical measurements were also carried out for as-deposited and thermally treated MIM devices including Al/Ta/Ta2O5/Cr or Ti structures. They exhibit a low leakage current (below 10-7 A/cm2 at 2 MV) and reasonable breakdown voltage (5-7 MV/cm) with a uniformity of 92%. Finally, under low-temperature post-annealing conditions, The Current-Voltage (I-V) behaviors and conduction mechanisms of MIM devices on polymer substrates are discussed based on the results of electrical measurements, structural investigations and conduction band modeling.

  8. Design of a compact and high sensitive refractive index sensor base on metal-insulator-metal plasmonic Bragg grating.

    PubMed

    Binfeng, Yun; Guohua, Hu; Ruohu, Zhang; Yiping, Cui

    2014-11-17

    A nanometric and high sensitive refractive index sensor based on the metal-insulator-metal plasmonic Bragg grating is proposed. The wavelength encoded sensing characteristics of the refractive index sensor were investigated by analyzing its transmission spectrum. The numerical results show that a good linear relationship between the Bragg wavelength and the refractive index of the sensing material can be obtained, which is in accordance with the analytical results very well. A high refractive index sensitivity of 1,488 nm/RIU around Bragg resonance wavelength of 1,550 nm was obtained. Besides, the simulation results show that the sensitivity is depended on the Bragg resonance wavelength and the longer the Bragg resonance wavelength, the higher sensitivity can be obtained. Furthermore, the figure of merit of the refractive index sensor can be greatly increased by introducing a nano-cavity in the proposed plasmonic Bragg grating structure. This work pave the way for high sensitive nanometric refractive index sensor design and application.

  9. Electrostatic analysis of n-doped SrTiO{sub 3} metal-insulator-semiconductor systems

    SciTech Connect

    Kamerbeek, A. M. Banerjee, T.; Hueting, R. J. E.

    2015-12-14

    Electron doped SrTiO{sub 3}, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO{sub 3} systems show reasonably strong rectification even when SrTiO{sub 3} is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO{sub x} in between the metal and n-SrTiO{sub 3} interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO{sub 3}) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO{sub 3}. The non-linear permittivity of n-SrTiO{sub 3} leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.

  10. Design of a compact and high sensitive refractive index sensor base on metal-insulator-metal plasmonic Bragg grating.

    PubMed

    Binfeng, Yun; Guohua, Hu; Ruohu, Zhang; Yiping, Cui

    2014-11-17

    A nanometric and high sensitive refractive index sensor based on the metal-insulator-metal plasmonic Bragg grating is proposed. The wavelength encoded sensing characteristics of the refractive index sensor were investigated by analyzing its transmission spectrum. The numerical results show that a good linear relationship between the Bragg wavelength and the refractive index of the sensing material can be obtained, which is in accordance with the analytical results very well. A high refractive index sensitivity of 1,488 nm/RIU around Bragg resonance wavelength of 1,550 nm was obtained. Besides, the simulation results show that the sensitivity is depended on the Bragg resonance wavelength and the longer the Bragg resonance wavelength, the higher sensitivity can be obtained. Furthermore, the figure of merit of the refractive index sensor can be greatly increased by introducing a nano-cavity in the proposed plasmonic Bragg grating structure. This work pave the way for high sensitive nanometric refractive index sensor design and application. PMID:25402107

  11. A metal-insulator-metal electron emitter based on a porous Al{sub 2}O{sub 3} film

    SciTech Connect

    Xue, Tao; Liang, Zhi-Hu Zhang, Xiao-Ning; Liu, Chun-Liang

    2015-04-20

    A metal-insulator-metal electron emitter containing a sandwiched insulator layer composed of porous aluminum oxide Al{sub 2}O{sub 3} was fabricated. The electron emission characteristics of the electron emitter were investigated under vacuum and xenon. Treatment with H{sub 3}PO{sub 4} and rapid thermal oxidation increased the electric field inside the insulator and improved the quality of porous Al{sub 2}O{sub 3}, resulting in higher efficiency and less fluctuation of electron emission. The maximum current and efficiency of electron emission reached 1.05 mA/cm{sup 2} and 51.2%, respectively, under a pressure of 1.0×10{sup −4} Pa. In addition, electrons were injected into xenon and 147 nm vacuum ultraviolet emission was detected in xenon at a pressure of 5.0 × 10{sup 2 }Pa. This electron emitter has a great potential for use as an ultraviolet radiation source.

  12. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  13. Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes

    NASA Astrophysics Data System (ADS)

    Lukosius, M.; Blomberg, T.; Walczyk, D.; Ruhl, G.; Wenger, Ch

    2012-12-01

    Metal-Insulator-metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric have been investigated in this work. Structural and electrical properties were studied after the formation of the MIM stack consisting of the platinum (Pt) bottom electrode, 50 nm SrTiO3 layer and the top Pt electrode. The as deposited films were amorphous and had a dielectric constant of ~ 10, whereas the annealing of the samples in the nitrogen (N2) or oxygen (O2) atmosphere at 550-600 °C led to the crystallization of the SrTiO3 and therefore to the increased dielectric constant of ~ 85. In addition, the electrical results revealed that the combination of SrTiO3 with the high work function electrode like Pt, provided better leakage current performance in comparison with TiN/ SrTiO3 stacks. The values as low as ~ 10-7 A/cm2 at 2 V were observed for both in N2 or O2 annealed SrTiO3 layers. On the other hand, the samples annealed in O2 atmosphere at 600 °C possessed lower capacitance-voltage nonlinearity coefficients (-645 ppm/V2) than the ones for N2 annealed samples (-2700 ppm/V2).

  14. Optical modulators with 2D layered materials

    NASA Astrophysics Data System (ADS)

    Sun, Zhipei; Martinez, Amos; Wang, Feng

    2016-04-01

    Light modulation is an essential operation in photonics and optoelectronics. With existing and emerging technologies increasingly demanding compact, efficient, fast and broadband optical modulators, high-performance light modulation solutions are becoming indispensable. The recent realization that 2D layered materials could modulate light with superior performance has prompted intense research and significant advances, paving the way for realistic applications. In this Review, we cover the state of the art of optical modulators based on 2D materials, including graphene, transition metal dichalcogenides and black phosphorus. We discuss recent advances employing hybrid structures, such as 2D heterostructures, plasmonic structures, and silicon and fibre integrated structures. We also take a look at the future perspectives and discuss the potential of yet relatively unexplored mechanisms, such as magneto-optic and acousto-optic modulation.

  15. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  16. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    NASA Astrophysics Data System (ADS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Regan, William Raymond; Zettl, Alex

    2015-03-01

    We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

  17. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    PubMed

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

  18. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    PubMed

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications. PMID:27464073

  19. Random Field Driven Spatial Complexity at the Mott Transition in VO2

    NASA Astrophysics Data System (ADS)

    Liu, Shuo; Phillabaum, B.; Carlson, E. W.; Dahmen, K. A.; Vidhyadhiraja, N. S.; Qazilbash, M. M.; Basov, D. N.

    2016-01-01

    We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

  20. High divergent 2D grating

    NASA Astrophysics Data System (ADS)

    Wang, Jin; Ma, Jianyong; Zhou, Changhe

    2014-11-01

    A 3×3 high divergent 2D-grating with period of 3.842μm at wavelength of 850nm under normal incidence is designed and fabricated in this paper. This high divergent 2D-grating is designed by the vector theory. The Rigorous Coupled Wave Analysis (RCWA) in association with the simulated annealing (SA) is adopted to calculate and optimize this 2D-grating.The properties of this grating are also investigated by the RCWA. The diffraction angles are more than 10 degrees in the whole wavelength band, which are bigger than the traditional 2D-grating. In addition, the small period of grating increases the difficulties of fabrication. So we fabricate the 2D-gratings by direct laser writing (DLW) instead of traditional manufacturing method. Then the method of ICP etching is used to obtain the high divergent 2D-grating.

  1. Electron Excitation Cross Sections for the S// Transitions 3s(sup 2)3p(sup 3) (sup 4)s(deg) (leads to)3s(sup 2)3p(sup 3) (sup 2)D(deg), (sup 2)p(deg) and 3s3p(sup 4) (sup 4)p

    NASA Technical Reports Server (NTRS)

    Liao, C.; Smith, S. J.; Hitz, D.; Chutjian, A.; Tayal, S. S.

    1996-01-01

    Experimental and theoretical collisional excitation cross sections are reported for the transitions 3s(sup 2)3p(sup 3) (sup 4)s(deg) (leads to)3s(sup 2)3p(sup 3)(sup 2)D(deg), (sup 2)p(deg) and 3s3p(sup 4) (sup 4)p in s//.

  2. 2D materials: Graphene and others

    NASA Astrophysics Data System (ADS)

    Bansal, Suneev Anil; Singh, Amrinder Pal; Kumar, Suresh

    2016-05-01

    Present report reviews the recent advancements in new atomically thick 2D materials. Materials covered in this review are Graphene, Silicene, Germanene, Boron Nitride (BN) and Transition metal chalcogenides (TMC). These materials show extraordinary mechanical, electronic and optical properties which make them suitable candidates for future applications. Apart from unique properties, tune-ability of highly desirable properties of these materials is also an important area to be emphasized on.

  3. Superconductivity Series of Ion-gated Transition Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Shi, Wu; Ye, Jianting; Zhang, Yijing; Suzuki, Ryuji; Yoshida, Masaro; Inoue, Naoko; Saito, Yu; Iwasa, Yoshihiro

    2015-03-01

    Semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest as typical two-dimensional (2D) materials. By mechanical cleavage, atomically flat and chemically stable thin flakes of TMDs can be readily obtained from bulk crystals. Recently, coupling with high efficient ionic media, TMD thin flakes have exhibited extraordinary electronic and opto-valleytronic properties in the form of electrical double layer transistors (EDLTs). The introduction of high-density carriers have also induced metal-insulator transition and superconductivity in MoS2, revealing an enhanced Tc and a dome-like phase diagram that are inaccessible through conventional chemically doping. In this work, we report the discovery of a superconductivity series based on a further exploration of other available semiconducting TMDs (MoSe2, MoTe2, WS2, WSe2) by using different ionic media. The present results not only complement important superconducting properties in TMDs, but also suggest a close correlation between transistor operation and the possibility of inducing superconductivity, providing general guidelines for the optimization of charge accumulation and the induction of superconductivity in other material series via ionic gating. Present address: University of Groningen.

  4. A Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Kikuchi, Yota

    2010-10-01

    A hydrogen gas sensor based on platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistors (Si-MISFETs) was developed. The sensor has a unique gate structure composed of titanium and oxygen accumulated around platinum grains on top of a novel mixed layer of nanocrystalline TiOx and superheavily oxygen-doped amorphous titanium formed on SiO2/Si substrates. The FET hydrogen sensor shows high reliability and high sensing amplitude (Δ Vg) defined by the magnitude of the threshold voltage shift. Δ Vg is well fitted by a linear function of the logarithm of air-diluted hydrogen concentration C (ppm), i.e., Δ Vg(V) =0.355 log C(ppm ) -0.610 , between 100 ppm and 1%. This high gradient coefficient of Δ Vg for the wide sensing range demonstrates that the sensor is suitable for most hydrogen-safety-monitoring sensor systems. The Pt-Ti-O structures of the sensor are typically realized by annealing Pt (15 nm)/Ti (5 nm)-gate Si-metal-oxide-semiconductor structures in air at 400 °C for 2 h. The Pt-Ti-O gate MIS structures were analyzed by transmission electron microscope (TEM), x-ray diffraction, Auger electron spectroscopy, and TEM energy dispersive x-ray spectroscopy. From the viewpoint of practical sensing applications, hydrogen postannealing of the Pt-Ti-O gate Si-MISFETs is necessary to reduce the residual sensing amplitudes with long tailing profiles.

  5. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    NASA Astrophysics Data System (ADS)

    Alimardani, Nasir; King, Sean W.; French, Benjamin L.; Tan, Cheng; Lampert, Benjamin P.; Conley, John F.

    2014-07-01

    The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb2O5, Ta2O5, ZrO2, HfO2, Al2O3, and SiO2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (EG) and energy position of intrinsic sub-gap defect states for each insulator. EG of as-deposited ALD insulators are found to be Nb2O5 = 3.8 eV, Ta2O5 = 4.4 eV, ZrO2 = 5.4 eV, HfO2 = 5.6 eV, Al2O3 = 6.4 eV, and SiO2 = 8.8 eV with uncertainty of ±0.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al2O3 and SiO2 are found to operate based on Fowler-Nordheim tunneling. Al2O3 shows the highest asymmetry. ZrO2, Nb2O5, and Ta2O5 based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO2, conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed.

  6. Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

    PubMed Central

    Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

    2014-01-01

    Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

  7. Ultrafast 2D IR microscopy

    PubMed Central

    Baiz, Carlos R.; Schach, Denise; Tokmakoff, Andrei

    2014-01-01

    We describe a microscope for measuring two-dimensional infrared (2D IR) spectra of heterogeneous samples with μm-scale spatial resolution, sub-picosecond time resolution, and the molecular structure information of 2D IR, enabling the measurement of vibrational dynamics through correlations in frequency, time, and space. The setup is based on a fully collinear “one beam” geometry in which all pulses propagate along the same optics. Polarization, chopping, and phase cycling are used to isolate the 2D IR signals of interest. In addition, we demonstrate the use of vibrational lifetime as a contrast agent for imaging microscopic variations in molecular environments. PMID:25089490

  8. AnisWave 2D

    2004-08-01

    AnisWave2D is a 2D finite-difference code for a simulating seismic wave propagation in fully anisotropic materials. The code is implemented to run in parallel over multiple processors and is fully portable. A mesh refinement algorithm has been utilized to allow the grid-spacing to be tailored to the velocity model, avoiding the over-sampling of high-velocity materials that usually occurs in fixed-grid schemes.

  9. Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects

    NASA Astrophysics Data System (ADS)

    Fadjie-Djomkam, A. B.; Ababou-Girard, S.; Godet, C.

    2012-12-01

    Electrical transport through molecular monolayers being very sensitive to disorder effects, admittance and current density characteristics of Hg//C12H25 - n Si junctions incorporating covalently bonded n-alkyl molecular layers, were investigated at low temperature (150-300 K), in the as-grafted state and after ageing at the ambient. This comparison reveals local oxidation effects both at the submicron scale in the effective barrier height distribution and at the molecular scale in the dipolar relaxation. In the bias range dominated by thermionic emission and modified by the tunnel barrier (TB) attenuation, exp(-β0dT), where dT is the thickness of the molecular tunnel barrier and β0 is the inverse attenuation length at zero applied bias, some excess current is attributed to a distribution of low barrier height patches. Complementary methods are used to analyze the current density J(V, T) characteristics of metal-insulator-semiconductor tunnel diodes. Assuming a Gaussian distribution of barrier heights centered at qΦB provides an analytical expression of the effective barrier height, qΦEFF(T)=qΦB+(kT)β0dT-(qδΦ)2/2kT; this allows fitting of the distribution standard deviation δΦ and tunnel parameter (β0dT) over a wide temperature range. In a more realistic modeling including the voltage dependence of barrier height and circular patch area, the so-called "pinch-off" effect is described by a distribution of parameter γ =3(ΔPRP2/4)1/3, which combines interface potential modulation and patch area variations. An arbitrary distribution of γ values, fitted to low-temperature J(V) data, is equally well described by Gaussian or exponential functions. Ageing in air also increases the interface oxidation of Si substrate and affects the density of localized states near mid gap, which typically rises to the high 1011 eV-1 cm-2 range, as compared with DS < 1011 eV-1 cm-2 in the as-grafted state. The bias-independent relaxation observed near 1 kHz at low temperature

  10. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    SciTech Connect

    Alimardani, Nasir; Tan, Cheng; Lampert, Benjamin P.; Conley, John F.; King, Sean W.; French, Benjamin L.

    2014-07-14

    The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb{sub 2}O{sub 5}, Ta{sub 2}O{sub 5}, ZrO{sub 2}, HfO{sub 2}, Al{sub 2}O{sub 3}, and SiO{sub 2} amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (E{sub G}) and energy position of intrinsic sub-gap defect states for each insulator. E{sub G} of as-deposited ALD insulators are found to be Nb{sub 2}O{sub 5} = 3.8 eV, Ta{sub 2}O{sub 5} = 4.4 eV, ZrO{sub 2} = 5.4 eV, HfO{sub 2} = 5.6 eV, Al{sub 2}O{sub 3} = 6.4 eV, and SiO{sub 2} = 8.8 eV with uncertainty of ±0.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al{sub 2}O{sub 3} and SiO{sub 2} are found to operate based on Fowler-Nordheim tunneling. Al{sub 2}O{sub 3} shows the highest asymmetry. ZrO{sub 2}, Nb{sub 2}O{sub 5}, and Ta{sub 2}O{sub 5} based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO{sub 2}, conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed.

  11. Localization of metal-induced gap states at the metal-insulator interface: Origin of flux noise in SQUIDs and superconducting qubits

    SciTech Connect

    Choi, SangKook; Lee, Dung-Hai; Louie, Steven G.; Clarke, John

    2009-10-10

    The origin of magnetic flux noise in Superconducting Quantum Interference Devices with a power spectrum scaling as 1/f (f is frequency) has been a puzzle for over 20 years. This noise limits the decoherence time of superconducting qubits. A consensus has emerged that the noise arises from fluctuating spins of localized electrons with an areal density of 5 x 10(17)m(-2). We show that, in the presence of potential disorder at the metal-insulator interface, some of the metal-induced gap states become localized and produce local moments. A modest level of disorder yields the observed areal density.

  12. 2D Spinodal Decomposition in Forced Turbulence

    NASA Astrophysics Data System (ADS)

    Fan, Xiang; Diamond, Patrick; Chacon, Luis; Li, Hui

    2015-11-01

    Spinodal decomposition is a second order phase transition for binary fluid mixture, from one thermodynamic phase to form two coexisting phases. The governing equation for this coarsening process below critical temperature, Cahn-Hilliard Equation, is very similar to 2D MHD Equation, especially the conserved quantities have a close correspondence between each other, so theories for MHD turbulence are used to study spinodal decomposition in forced turbulence. Domain size is increased with time along with the inverse cascade, and the length scale can be arrested by a forced turbulence with direct cascade. The two competing mechanisms lead to a stabilized domain size length scale, which can be characterized by Hinze Scale. The 2D spinodal decomposition in forced turbulence is studied by both theory and simulation with ``pixie2d.'' This work focuses on the relation between Hinze scale and spectra and cascades. Similarities and differences between spinodal decomposition and MHD are investigated. Also some transport properties are studied following MHD theories. This work is supported by the Department of Energy under Award Number DE-FG02-04ER54738.

  13. Engineering light outcoupling in 2D materials.

    PubMed

    Lien, Der-Hsien; Kang, Jeong Seuk; Amani, Matin; Chen, Kevin; Tosun, Mahmut; Wang, Hsin-Ping; Roy, Tania; Eggleston, Michael S; Wu, Ming C; Dubey, Madan; Lee, Si-Chen; He, Jr-Hau; Javey, Ali

    2015-02-11

    When light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their dielectric surroundings. We show that by modulating the thicknesses of underlying substrates and capping layers, the interference caused by substrate can significantly enhance the light absorption and emission of WSe2, resulting in a ∼11 times increase in Raman signal and a ∼30 times increase in the photoluminescence (PL) intensity of WSe2. On the basis of the interference model, we also propose a strategy to control the photonic and optoelectronic properties of thin-layer WSe2. This work demonstrates the utilization of outcoupling engineering in 2D materials and offers a new route toward the realization of novel optoelectronic devices, such as 2D LEDs and solar cells.

  14. DYNA2D96. Explicit 2-D Hydrodynamic FEM Program

    SciTech Connect

    Whirley, R.G.

    1992-04-01

    DYNA2D is a vectorized, explicit, two-dimensional, axisymmetric and plane strain finite element program for analyzing the large deformation dynamic and hydrodynamic response of inelastic solids. DYNA2D contains 13 material models and 9 equations of state (EOS) to cover a wide range of material behavior. The material models implemented in all machine versions are: elastic, orthotropic elastic, kinematic/isotropic elastic plasticity, thermoelastoplastic, soil and crushable foam, linear viscoelastic, rubber, high explosive burn, isotropic elastic-plastic, temperature-dependent elastic-plastic. The isotropic and temperature-dependent elastic-plastic models determine only the deviatoric stresses. Pressure is determined by one of 9 equations of state including linear polynomial, JWL high explosive, Sack Tuesday high explosive, Gruneisen, ratio of polynomials, linear polynomial with energy deposition, ignition and growth of reaction in HE, tabulated compaction, and tabulated.

  15. 2D materials and van der Waals heterostructures.

    PubMed

    Novoselov, K S; Mishchenko, A; Carvalho, A; Castro Neto, A H

    2016-07-29

    The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear (for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices--such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes--are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices.

  16. Van der Waals stacked 2D layered materials for optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Wang, Qixing; Chen, Yu; Wang, Zhuo; Wee, Andrew T. S.

    2016-06-01

    The band gaps of many atomically thin 2D layered materials such as graphene, black phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range from 0 to 6 eV. These isolated atomic planes can be reassembled into hybrid heterostructures made layer by layer in a precisely chosen sequence. Thus, the electronic properties of 2D materials can be engineered by van der Waals stacking, and the interlayer coupling can be tuned, which opens up avenues for creating new material systems with rich functionalities and novel physical properties. Early studies suggest that van der Waals stacked 2D materials work exceptionally well, dramatically enriching the optoelectronics applications of 2D materials. Here we review recent progress in van der Waals stacked 2D materials, and discuss their potential applications in optoelectronics.

  17. Calculation of the state-to-state S-matrix for tetra-atomic reactions with transition-state wave packets: H{sub 2}/D{sub 2} + OH → H/D + H{sub 2}O/HOD

    SciTech Connect

    Zhao, Bin; Guo, Hua E-mail: hguo@unm.edu; Sun, Zhigang E-mail: hguo@unm.edu

    2014-10-21

    This work is concerned with the calculation of state-to-state S-matrix elements for four-atom reactions using a recently proposed method based on the quantum transition-state theory. In this approach, the S-matrix elements are computed from the thermal flux cross-correlation functions obtained in both the reactant and product arrangement channels. Since transition-state wave packets are propagated with only single arrangement channels, the bases/grids required are significantly smaller than those needed in state-to-state approaches based on a single set of scattering coordinates. Furthermore, the propagation of multiple transition-state wave packets can be carried out in parallel. This method is demonstrated for the H{sub 2}/D{sub 2} + OH → H/D + H{sub 2}O/HOD reactions (J = 0) and the reaction probabilities are in excellent agreement with benchmark results.

  18. MOSS2D V1

    2001-01-31

    This software reduces the data from two-dimensional kSA MOS program, k-Space Associates, Ann Arbor, MI. Initial MOS data is recorded without headers in 38 columns, with one row of data per acquisition per lase beam tracked. The final MOSS 2d data file is reduced, graphed, and saved in a tab-delimited column format with headers that can be plotted in any graphing software.

  19. Transitions.

    ERIC Educational Resources Information Center

    Field, David; And Others

    1992-01-01

    Includes four articles: "Career Aspirations" (Field); "Making the Transition to a New Curriculum" (Baker, Householder); "How about a 'Work to School' Transition?" (Glasberg); and "Technological Improvisation: Bringing CNC to Woodworking" (Charles, McDuffie). (SK)

  20. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    SciTech Connect

    Gao, Tao; Xu, Ruimin; Kong, Yuechan Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.