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Sample records for 2p valence band

  1. Irradiation-induced degradation of PTB7 investigated by valence band and S 2p photoelectron spectroscopy.

    PubMed

    Darlatt, Erik; Muhsin, Burhan; Roesch, Roland; Lupulescu, Cosmin; Roth, Friedrich; Kolbe, Michael; Gottwald, Alexander; Hoppe, Harald; Richter, Mathias

    2016-08-12

    Monochromatic radiation with known absolute radiant power from an undulator at the electron storage ring Metrology Light Source (MLS) was used to irradiate PTB7 (a thieno[3, 4-b]thiophene-alt-benzodithiophene polymer) thin films at wavelengths (photon energies) of 185 nm (6.70 eV), 220 nm (5.64 eV), 300 nm (4.13 eV), 320 nm (3.88 eV), 356 nm (3.48 eV) and 675 nm (1.84 eV) under ultra-high vacuum conditions for the investigation of radiation-induced degradation effects. The characterization of the thin films is focused at ultraviolet photoelectron spectroscopy (UPS) of valence bands and is complemented by S 2p x-ray photoelectron spectroscopy (S 2p XPS) before and after the irradiation procedure. The radiant exposure was determined for each irradiation by means of photodiodes traceably calibrated to the international system of units SI. The valence band spectra show the strongest changes for the shortest wavelengths and no degradation effect at 356 nm and 675 nm even with the highest radiant exposure applied. In the spectral range where the Sun appears bright on the Earth's surface, no degradation effects are observed. PMID:27363480

  2. Irradiation-induced degradation of PTB7 investigated by valence band and S 2p photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Darlatt, Erik; Muhsin, Burhan; Roesch, Roland; Lupulescu, Cosmin; Roth, Friedrich; Kolbe, Michael; Gottwald, Alexander; Hoppe, Harald; Richter, Mathias

    2016-08-01

    Monochromatic radiation with known absolute radiant power from an undulator at the electron storage ring Metrology Light Source (MLS) was used to irradiate PTB7 (a thieno[3, 4-b]thiophene-alt-benzodithiophene polymer) thin films at wavelengths (photon energies) of 185 nm (6.70 eV), 220 nm (5.64 eV), 300 nm (4.13 eV), 320 nm (3.88 eV), 356 nm (3.48 eV) and 675 nm (1.84 eV) under ultra-high vacuum conditions for the investigation of radiation-induced degradation effects. The characterization of the thin films is focused at ultraviolet photoelectron spectroscopy (UPS) of valence bands and is complemented by S 2p x-ray photoelectron spectroscopy (S 2p XPS) before and after the irradiation procedure. The radiant exposure was determined for each irradiation by means of photodiodes traceably calibrated to the international system of units SI. The valence band spectra show the strongest changes for the shortest wavelengths and no degradation effect at 356 nm and 675 nm even with the highest radiant exposure applied. In the spectral range where the Sun appears bright on the Earth’s surface, no degradation effects are observed.

  3. Valence band anticrossing in GaBixAs1-x

    NASA Astrophysics Data System (ADS)

    Alberi, K.; Dubon, O. D.; Walukiewicz, W.; Yu, K. M.; Bertulis, K.; Krotkus, A.

    2007-07-01

    The optical properties of GaBixAs1-x(0.04band gap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration. These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T2 states of the Bi atoms.

  4. Valence band anticrossing in GaBixAs1-x

    SciTech Connect

    Alberi, K.; Dubon, O. D.; Walukiewicz, W.; Yu, K. M.; Bertulis, K.; Krotkus, A.

    2007-07-11

    The optical properties of GaBixAs1-x (0.04< x< 0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong reduction in the bandgap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration. These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T2 states of the Bi atoms.

  5. Measurement of valence band structure in arbitrary dielectric films

    SciTech Connect

    Uhm, Han S.; Choi, Eun H.

    2012-10-15

    A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

  6. Valence band orbital polarization in III-V ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Freeman, A. A.; Edmonds, K. W.; van der Laan, G.; Campion, R. P.; Rushforth, A. W.; Farley, N. R. S.; Johal, T. K.; Foxon, C. T.; Gallagher, B. L.; Rogalev, A.; Wilhelm, F.

    2008-02-01

    The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the AsK absorption edge, yielding an As4p orbital magnetic moment of around -0.1μB per valence band hole, which is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the GaK edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn4p states to the MnK edge spectra.

  7. Valence-band states of ion-bombarded polystyrene

    SciTech Connect

    Terrasi, A. ); Foti, G. ); Hwu, Y. ); Margaritondo, G. )

    1991-08-01

    Ion-bombarded polystyrene with a 0.5-keV Ar{sup +} beam has been investigated by means of photoelectron spectroscopy performed with synchrotron radiation. After a dose of 10{sup 15} ions/cm{sup 2} the evolution of the valence band of the bombarded sample towards an amorphous carbonlike configuration is reported. From the analysis of valence-band spectra we estimated the out-diffusion of hydrogen and showed that its electronic states remain well identified and stable until the hydrogen presence is about 35% with respect to the pristine sample. Finally, comparison with mass spectroscopy measurements on deuterated polystyrene has been performed to determine hydrogen evolution during the ion irradiation.

  8. Inter-Valence-Subband/Conduction-Band-Transport IR Detectors

    NASA Technical Reports Server (NTRS)

    Ting, David; Gunapala, Sarath; Bandara, Sumith

    2004-01-01

    Infrared (IR) detectors characterized by a combination of (1) high-quantum-efficiency photoexcitation of inter-valence-subband transitions of charge carriers and (2) high-mobility conduction- band transport of the thus-excited charge carriers have been proposed in an effort to develop focal-plane arrays of such devices for infrared imaging. Like many prior quantum-well infrared photodetectors (QWIPs), the proposed devices would be made from semiconductor heterostructures. In order to obtain the combination of characteristics mentioned above, the proposed devices would be designed and fabricated in novel InAs/GaSb superlattice configurations that would exploit a phenomenon known in the semiconductor art as type-II broken-gap band offset.

  9. Valence fluctuation and magnetic ordering in EuNi2(P1-x Ge x )2 single crystals.

    PubMed

    Paramanik, U B; Bar, A; Das, Debarchan; Caroca-Canales, N; Prasad, R; Geibel, C; Hossain, Z

    2016-04-27

    Unusual phases and phase transitions are seen at the magnetic-nonmagnetic boundary in Ce-, Eu- and Yb-based compounds. EuNi2P2 is a very unusual valence fluctuating Eu system, because at low temperatures the Eu valence stays close to 2.5 instead of approaching an integer value. The Eu valence, and thus the magnetic property in this system, can be tuned by Ge substitution in the P site as EuNi2Ge2 is known to exhibit the antiferromagnetc (AFM) ordering of divalent Eu moments with [Formula: see text] K. We have grown EuNi2(P1-x Ge x )2 ([Formula: see text]) single crystals and studied their magnetic, thermodynamic and transport properties. Increasing Ge doping to x  >  0.4 results in a well-defined AFM ordered state with [Formula: see text] K for x  =  0.5. Moreover, the reduced value of magnetic entropy for x  =  0.5 at T N suggests the presence of valance fluctuation/the Kondo effect in this compound. Interestingly, the specific heat exhibits an enhanced Sommerfeld coefficient upon Ge doping. Subsequently, electronic structure calculations lead to a non-integral valence in EuNi2P2 but a stable divalent Eu state in EuNi2Ge2, which is in good agreement with the experimental results. PMID:26988385

  10. Separability Between Valence and Conduction Bands in Transition Metal Clusters

    SciTech Connect

    Apra, Edoardo; Carter, Emily A.; Fortunelli, Alessandro

    2004-07-30

    Simplified theories of transition metal electronic structure have been postulated for many decades. Here we test one such approximation, namely separate treatments of d (valence) and s/p (conduction) electrons in transition metal clusters, within a density functional formalism. Two different basic approaches are considered: (a) an independent-band approximation, in which the d- and s/p-bands interact only via the ?-dependent components of the Kohn-Sham operator; and (b) a more realistic approximation, in which the lowest-energy d- and s/p-orbitals (separately derived) are allowed to interact through explicit off-diagonal coupling matrix elements. Results are presented for the energy differences among three structural forms (icosahedral, cuboctahedral and truncated decahedral) of 13-atom Ni and Pt clusters. We demonstrate that an explicit decoupling of the d- and s/p-bands does not produce accurate results for the clusters considered here, not even for nickel, i.e., the transition metal for which d-s/p mixing should be at its minimum. By contrast, allowing the lowest energy orbitals of the two separate bands to interact improves the results considerably, and assures a fair description of metal-metal bonding. This suggests simplified models that exclude explicit d-s/p coupling should be employed with caution.

  11. Valence Band Anticrossing in GaBixAs1-x

    NASA Astrophysics Data System (ADS)

    Alberi, Kirstin; Dubon, O. D.; Walukiewicz, W.; Yu, K. M.; Bertulis, K.; Krotkus, A.

    2007-03-01

    Recently, significant attention has been devoted to exploring the large bandgap bowing and spin-orbit splitting in GaBixAs1-x. alloys. We attribute the origins of these effects to a restructuring of the alloy valence band induced by an anticrossing interaction between the delocalized GaAs p-like states and the resonant localized Bi p-like states. Hybridization of like-symmetry states leads to the splitting of the heavy hole, light hole and spin-orbit split-off bands into sets of E+ and E- subbands. The splitting is confirmed experimentally by photomodulated reflectance spectroscopy in alloys with Bi concentrations up to x = 0.084. The bandgap bowing is a direct consequence of the strong upward shift of the uppermost heavy and light hole E+ bands with increasing Bi concentration, while the much slower ascent of the spin-orbit split-off E+ band produces the large rise in the spin-orbit splitting energy.

  12. Valence fluctuation and magnetic ordering in EuNi2(P1-x Ge x )2 single crystals

    NASA Astrophysics Data System (ADS)

    Paramanik, U. B.; Bar, A.; Das, Debarchan; Caroca-Canales, N.; Prasad, R.; Geibel, C.; Hossain, Z.

    2016-04-01

    Unusual phases and phase transitions are seen at the magnetic-nonmagnetic boundary in Ce-, Eu- and Yb-based compounds. EuNi2P2 is a very unusual valence fluctuating Eu system, because at low temperatures the Eu valence stays close to 2.5 instead of approaching an integer value. The Eu valence, and thus the magnetic property in this system, can be tuned by Ge substitution in the P site as EuNi2Ge2 is known to exhibit the antiferromagnetc (AFM) ordering of divalent Eu moments with {{T}\\text{N}}=30 K. We have grown EuNi2(P1-x Ge x )2 (0.0≤slant x≤slant 0.5 ) single crystals and studied their magnetic, thermodynamic and transport properties. Increasing Ge doping to x  >  0.4 results in a well-defined AFM ordered state with {{T}\\text{N}}=12 K for x  =  0.5. Moreover, the reduced value of magnetic entropy for x  =  0.5 at T N suggests the presence of valance fluctuation/the Kondo effect in this compound. Interestingly, the specific heat exhibits an enhanced Sommerfeld coefficient upon Ge doping. Subsequently, electronic structure calculations lead to a non-integral valence in EuNi2P2 but a stable divalent Eu state in EuNi2Ge2, which is in good agreement with the experimental results.

  13. Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}

    SciTech Connect

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-15

    We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  14. Valence Band Control of Metal Silicide Films via Stoichiometry.

    PubMed

    Streller, Frank; Qi, Yubo; Yang, Jing; Mangolini, Filippo; Rappe, Andrew M; Carpick, Robert W

    2016-07-01

    The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate that the electronic structure of PtxSi thin films (1 ≤ x ≤ 3) can be tuned between metallic and semimetallic by changing the stoichiometry. Increasing the silicon content in PtxSi decreases the carrier density according to valence band X-ray photoelectron spectroscopy and theoretical density of states (DOS) calculations. Among all PtxSi phases, Pt3Si offers the highest DOS due to the modest shift of the Pt5d manifold away from the Fermi edge by only 0.5 eV compared to Pt, rendering it promising for applications. These results, demonstrating tunability of the electronic structure of thin metal silicide films, suggest that metal silicides can be designed to achieve application-specific electronic properties. PMID:27322019

  15. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    SciTech Connect

    Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  16. Measurements of the energy band gap and valence band structure of AgSbTe2

    NASA Astrophysics Data System (ADS)

    Jovovic, V.; Heremans, J. P.

    2008-06-01

    The de Haas-van Alphen effect, galvanomagnetic and thermomagnetic properties of high-quality crystals of AgSbTe2 are measured and analyzed. The transport properties reveal the material studied here to be a very narrow-gap semiconductor (Eg≈7.6±3meV) with ˜5×1019cm-3 holes in a valence band with a high density of states and thermally excited ˜1017cm-3 high-mobility (2200cm2/Vs) electrons at 300 K. The quantum oscillations are measured with the magnetic field oriented along the ⟨111⟩ axis. Taken together with the Fermi energy derived from the transport properties, the oscillations confirm the calculated valence band structure composed of 12 half-pockets located at the X -points of the Brillouin zone, six with a density-of-states effective mass mda∗≫0.21me and six with mdb∗≫0.55me , giving a total density-of-states effective mass, including Fermi pocket degeneracy, of md∗≈1.7±0.2me ( me is the free electron mass). The lattice term dominates the thermal conductivity, and the electronic contribution in samples with both electrons and holes present is in turn dominated by the ambipolar term. The low thermal conductivity and very large hole mass of AgSbTe2 make it a most promising p -type thermoelectric material.

  17. Rare earth 4f hybridization with the GaN valence band

    NASA Astrophysics Data System (ADS)

    Wang, Lu; Mei, Wai-Ning; McHale, S. R.; McClory, J. W.; Petrosky, J. C.; Wu, J.; Palai, R.; Losovyj, Y. B.; Dowben, P. A.

    2012-11-01

    The placement of the Gd, Er and Yb 4f states within the GaN valence band has been explored by both experiment and theory. The 4d-4f photoemission resonances for various rare-earth(RE)-doped GaN thin films (RE = Gd, Er, Yb) provide an accurate depiction of the occupied 4f state placement within the GaN. The resonant photoemission show that the major Er and Gd RE 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other RE-doped semiconductors. For Yb, there is a very little resonant enhancement of the valence band of Yb-doped GaN, consistent with a large 4f14-δ occupancy. The placement of the RE 4f levels is in qualitative agreement with theoretical expectations.

  18. The rare earth 4 f hybridization with the GaN valence band

    NASA Astrophysics Data System (ADS)

    Wang, Lu; Mei, Wai-Ning; McHale, Steve; McClory, John; Petrosky, James; Wu, J.; Palai, Ratnakar; Losovyj, Yaroslav; Dowben, Peter

    2013-03-01

    The placement of the Gd, Er, and Yb 4f states within the GaN valence band has been explored by both experiment and theory. The 4 d - 4 f photoemission resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) provide an accurate depiction of the occupied 4 f state placement within the GaN. The resonant photoemission show that the major Er and Gd rare earth 4 f weight is at about 5-6 eV below the valence band maximum, similar to the 4 f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f 14 - δ occupancy. The placement of the rare earth 4 f levels is in qualitative agreement with theoretical expectations.

  19. Valence band hybridization in N-rich GaN1-xAsx alloys

    SciTech Connect

    Wu, J.; Walukiewicz, W.; Yu, K.M.; Denlinger, J.D.; Shan, W.; Ager III, J.W.; Kimura, A.; Tang, H.F.; Kuech, T.F.

    2004-05-04

    We have used photo-modulated transmission and optical absorption spectroscopies to measure the composition dependence of interband optical transitions in N-rich GaN{sub 1-x}As{sub x} alloys with x up to 0.06. The direct bandgap gradually decreases as x increases. In the dilute x limit, the observed band gap approaches 2.8 eV; this limiting value is attributed to a transition between the As localized level, which has been previously observed in As-doped GaN at 0.6 eV above the valence band maximum in As-doped GaN, and the conduction band minimum. The structure of the valence band of GaN{sub 1-x}As{sub x} is explained by the hybridization of the localized As states with the extended valence band states of GaN matrix. The hybridization is directly confirmed by soft x-ray emission experiments. To describe the electronic structure of the GaN{sub 1-x}As{sub x} alloys in the entire composition range a linear interpolation is used to combine the effects of valence band hybridization in N-rich alloys with conduction band anticrossing in As-rich alloys.

  20. Determination of the valence band structure of an alkali phosphorus oxynitride glass: A synchrotron XPS study on LiPON

    NASA Astrophysics Data System (ADS)

    Schwöbel, André; Precht, Ruben; Motzko, Markus; Carrillo Solano, Mercedes A.; Calvet, Wolfram; Hausbrand, René; Jaegermann, Wolfram

    2014-12-01

    Lithium phosphorus oxynitride (LiPON) is a solid state electrolyte commonly used in thin film batteries (TFBs). Advanced TFBs face the issue of detrimental electrode-electrolyte interlayer formation, related to the electronic structure of the interface. In this contribution, we study the valence band structure of LiPON using resonant photoemission and synchrotron photoemission with variable excitation energies. The identification of different valence band features is done according to the known valence band features of meta- and orthophosphates. Additionally we compare our results with partial density of states simulations from literature. We find that the valence band structure is similar to the known metaphosphates with an additional contribution of nitrogen states at the top of the valence band. From the results we conclude that synchrotron X-ray photoemission (XPS) is a useful tool to study the valence band structure of nitridated alkali phosphate glasses.

  1. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  2. Rotational bands terminating at maximal spin in the valence space

    SciTech Connect

    Ragnarsson, I.; Afanasjev, A.V.

    1996-12-31

    For nuclei with mass A {le} 120, the spin available in {open_quotes}normal deformation configurations{close_quotes} is experimentally accessible with present detector systems. Of special interest are the nuclei which show collective features at low or medium-high spin and where the corresponding rotational bands with increasing spin can be followed in a continuous way to or close to a non-collective terminating state. Some specific features in this context are discussed for nuclei in the A = 80 region and for {sup 117,118}Xe.

  3. Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory

    NASA Astrophysics Data System (ADS)

    Lischner, Johannes; Nemšák, Slavomír; Conti, Giuseppina; Gloskovskii, Andrei; Pálsson, Gunnar Karl; Schneider, Claus M.; Drube, Wolfgang; Louie, Steven G.; Fadley, Charles

    2016-04-01

    We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novel solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.

  4. Cooper pairing in the insulating valence band in iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Hu, Lun-Hui; Chen, Wei-Qiang; Zhang, Fu-Chun

    2015-04-01

    Conventional Cooper pairing arises from attractive interaction of electrons in the metallic bands. A recent experiment on Co-doped LiFeAs shows superconductivity in the insulating valence band, which is evolved from a metallic hole band upon doping. Here we examine this phenomenon by studying superconductivity in a three-orbital Hamiltonian relevant to the doped LiFeAs. We show explicitly that Cooper pairing of the insulating hole band requires a finite pairing interaction strength. For strong coupling, the superconductivity in the hole band is robust against the sink of the hole band below the Fermi level. Our theory predicts a substantial upward shift of the chemical potential in the superconducting transition for Co-doped LiFeAs.

  5. Measurement of valence band structure in boron-zinc-oxide films by making use of ion beams

    SciTech Connect

    Uhm, Han S.; Kwon, Gi C.; Choi, Eun H.

    2011-12-26

    Measurement of valence band structure in the boron-zinc oxide (BZO) films was developed using the secondary electron emission due to the Auger neutralization of ions. The energy distribution profile of the electrons emitted from boron-zinc-oxide films was measured and rescaled so that Auger self-convolution arose; thus, revealing the detailed structure of the valence band and suggesting that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film.

  6. Impact of the valence band structure of Cu2O on excitonic spectra

    NASA Astrophysics Data System (ADS)

    Schweiner, Frank; Main, Jörg; Feldmaier, Matthias; Wunner, Günter; Uihlein, Christoph

    2016-05-01

    We present a method to calculate the excitonic spectra of all direct semiconductors with a complex valence band structure. The Schrödinger equation is solved using a complete basis set with Coulomb-Sturmian functions. This method also allows for the computation of oscillator strengths. Here we apply this method to investigate the impact of the valence band structure of cuprous oxide (Cu2O ) on the yellow exciton spectrum. Results differ from those of J. Thewes et al. [Phys. Rev. Lett. 115, 027402 (2015), 10.1103/PhysRevLett.115.027402]; the differences are discussed and explained. The difference between the second and third Luttinger parameter can be determined by comparisons with experiments; however, the evaluation of all three Luttinger parameters is not uniquely possible. Our results are consistent with band structure calculations. Considering also a finite momentum ℏ K of the center of mass, we show that the large K -dependent line splitting observed for the 1 S exciton state by G. Dasbach et al. [Phys. Rev. Lett. 91, 107401 (2003), 10.1103/PhysRevLett.91.107401] is not related to an exchange interaction but rather to the complex valence band structure of Cu2O .

  7. Heterogeneous and hyperfine interactions between valence states of molecular iodine correlating with the I(2P1/2) + I(2P1/2) dissociation limit

    NASA Astrophysics Data System (ADS)

    Baturo, Vera V.; Cherepanov, Igor N.; Lukashov, Sergey S.; Poretsky, Sergey A.; Pravilov, Anatoly M.; Zhironkin, Anatoly I.

    2016-05-01

    Detailed analysis of interactions between all 0g + , 1u, and 0u - weakly bound states of iodine molecule correlating with the I(2P1/2) + I(2P1/2) (bb) dissociation limit has been performed. For this purpose, the 0u - (bb) state has been described using analysis of rotationally resolved excitation spectra of luminescence from the g 0g - state populated in a three-step three-color perturbation facilitated excitation scheme via the 0u - state. Energies of 41 rovibrational levels, molecular constants, and potential energy curve have been determined. Energy gaps between closest rovibrational levels of the 0u - and 0g + , 1u (bb) states are found to be large, ˜6 cm-1. However, interaction of all three 0g + , 1u, and 0u - (bb) states has been observed. It has been found that the 0u - and 1u electronic states are mixed by heterogeneous interactions, while their mixing with the 0g + one is due to hyperfine interactions predominantly. Admixture coefficients and electronic matrix elements of the coupling between the 0g + ˜1u, 0g + ˜ 0u - , and 0u - ˜1u states have been estimated.

  8. Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy.

    PubMed

    Rangel-Kuoppa, Victor-Tapio; Tonkikh, Alexander; Zakharov, Nikolay; Eisenschmidt, Christian; Werner, Peter

    2016-02-19

    A set of Si1-x Sn x /Si(001) quantum wells (QWs) is grown by applying molecular beam epitaxy. The activation energies of holes in these QWs are studied by deep-level transient spectroscopy. It is observed that the holes activation energies increase monotonically with the Sn fraction (x). The valence band offset between pseudomorphic Si1-x Sn x and Si obeys the dependence ΔE(v) = 1.69x eV, while the offset between the average valence bands of unstrained Si1-x Sn x /Si heterojunction was deduced and obeys the dependence ΔE(v(av)) = 1.27x eV. PMID:26775681

  9. Valence band structure of the icosahedral Ag-In-Yb quasicrystal

    SciTech Connect

    Sharma, H. R.; Simutis, G.; Dhanak, V. R.; Nugent, P. J.; McGrath, R.; Cui, C.; Shimoda, M.; Tsai, A. P.; Ishii, Y.

    2010-03-01

    The valence band structure of the icosahedral (i) Ag-In-Yb quasicrystal, which is isostructural to the binary i-Cd-Yb system, is investigated by ultraviolet photoemission spectroscopy (UPS). Experimental results are compared with electronic-structure calculations of a cubic approximant of the same phase. UPS spectra from the fivefold, threefold, and twofold i-Ag-In-Yb surfaces reveal that the valence band near to the Fermi level is dominated by Yb 4f-derived states, in agreement with calculations. The spectra also exhibit peaks which are surface core level shifted, caused by changes in the electronic structure in surface layers. Calculations yield a pseudogap in the density of states due to a hybridization of the Yb 5d band with the Ag 5p and In 5p bands. Both experimental and calculated band features are very similar to those of Cd-Yb. The modification of the band structure after surface treatment by sputtering and by oxidation is also studied. Additionally, the work function of i-Ag-In-Yb measured from the width of UPS spectrum is found to be almost unaffected by surface orientation, but increases after sputtering or oxidation.

  10. Optical signatures of valence-band mixing in positive trion recombination spectra of double quantum dots

    NASA Astrophysics Data System (ADS)

    Pasek, W. J.; Nowak, M. P.; Szafran, B.

    2014-06-01

    We consider optical signatures of valence band mixing in positive trion and exciton complexes in vertically stacked InGaAs quantum dots. We use the configuration interaction method and an axially symmetric four-band Luttinger-Kohn Hamiltonian (KL) that allows for heavy-hole and light-hole band mixing due to spin-orbit interaction. A scalar effective hole mass model is also included for comparison. We found essential differences (i.e., different recombination patterns) between the KL and separated-bands model spectra. In the weak-coupling regime for KL model, we obtained a good agreement with experimentally observed X patterns in contrast to the scalar effective mass model.

  11. Angle-resolved photoemission studies of the valence bands of ZrSxSe2-x

    NASA Astrophysics Data System (ADS)

    Moustafa, Mohamed; Paulheim, Alexander; Mohamed, Mansour; Janowitz, Christoph; Manzke, Recardo

    2016-03-01

    The electronic structure of the ternary layered transition metal dichalcogenide compounds of ZrSxSe2-x, where 0 ≤ x ≤ 2, has been studied by means of high resolution angle-resolved photoemission spectroscopy (ARPES) used in conjunction with synchrotron radiation facilities. The crystals were grown by the chemical vapor transport technique using iodine as a transport agent. They are found to be degenerate extrinsic n-type semiconductors with an indirect bandgap character. The experimental valence band structure of the complete series of ZrSxSe2-x is reported along the major symmetry azimuthal directions in the Brillouin zone parallel to the layers. The results show that the binding energies of the topmost valence band shift almost linearly with the composition parameter x. Further, an emission from the conduction band minimum observed just below the Fermi edge enabled us to estimate the energy gap values. The electronic structure deduced from the photoemission measurements are discussed and compared to band structure calculations.

  12. Convergence of valence bands for high thermoelectric performance for p-type InN

    NASA Astrophysics Data System (ADS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-12-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of ZeT is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  13. Band width and multiple-angle valence-state mapping of diamond

    SciTech Connect

    Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J.

    1997-04-01

    The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid`s many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of {+-}1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84{degrees} cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space.

  14. The role of valence-band excitation in laser ablation of KCl

    NASA Technical Reports Server (NTRS)

    Haglund, Richard F., Jr.; Tang, Kai; Bunton, Patrick H.; Wang, Ling-Jun

    1991-01-01

    We present recent measurements of excited-atom and ion emission from KCl surfaces illuminated by vacuum-ultraviolet synchrotron radiation (h-nu = 8-28 eV) and ultraviolet laser light (h-nu = 4 eV). At low intensities characteristic of the synchrotron experiments, excited atoms are desorbed by simple valence-band excitation process involving the metallization of the KCl surface. At the higher intensities typical of laser desorption and ablation, we observe a strong decrease in K emission as a function of the number of laser shots, but an essentially constant yield of Cl. K(+) and Cl(-) emission at high intensities show similar behavior. The energetics of these desorption phenomena can be treated in a bond-orbital model which shows that creation of a single valence hole is sufficient to excite an ion to an anti-bonding state.

  15. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    DOE PAGESBeta

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; et al

    2016-04-08

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

  16. On Valence-Band Splitting in Layered MoS2.

    PubMed

    Zhang, Youwei; Li, Hui; Wang, Haomin; Liu, Ran; Zhang, Shi-Li; Qiu, Zhi-Jun

    2015-08-25

    As a representative two-dimensional semiconducting transition-metal dichalcogenide (TMD), the electronic structure in layered MoS2 is a collective result of quantum confinement, interlayer interaction, and crystal symmetry. A prominent energy splitting in the valence band gives rise to many intriguing electronic, optical, and magnetic phenomena. Despite numerous studies, an experimental determination of valence-band splitting in few-layer MoS2 is still lacking. Here, we show how the valence-band maximum (VBM) splits for one to five layers of MoS2. Interlayer coupling is found to contribute significantly to phonon energy but weakly to VBM splitting in bilayers, due to a small interlayer hopping energy for holes. Hence, spin-orbit coupling is still predominant in the splitting. A temperature-independent VBM splitting, known for single-layer MoS2, is, thus, observed for bilayers. However, a Bose-Einstein type of temperature dependence of VBM splitting prevails in three to five layers of MoS2. In such few-layer MoS2, interlayer coupling is enhanced with a reduced interlayer distance, but thermal expansion upon temperature increase tends to decouple adjacent layers and therefore decreases the splitting energy. Our findings that shed light on the distinctive behaviors about VBM splitting in layered MoS2 may apply to other hexagonal TMDs as well. They will also be helpful in extending our understanding of the TMD electronic structure for potential applications in electronics and optoelectronics. PMID:26222731

  17. Additional evidence concerning the valence-band offset in HgTe/CdTe

    NASA Astrophysics Data System (ADS)

    Young, P. M.; Ehrenreich, H.

    1991-05-01

    The consistency of large values of the valence-band offset, Λ, in HgTe/CdTe superlattices with magneto-optical experiments is examined in light of data on a 90-Å HgTe/40-Å CdTe superlattice. The data are shown to be consistent with values Λ=400+/-40 meV rather than the much smaller cited values. This analysis, when considered with photoemission experiments, leaves intact the conclusion that HgTe/CdTe superlattices are best explained by a large offset.

  18. Experimental study of the valence band of Bi2Se3

    DOE PAGESBeta

    Gao, Yi-Bin; He, Bin; Parker, David; Androulakis, Ioannis; Heremans, Joseph P.

    2014-09-26

    The valence band of Bi2Se3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

  19. Absolute oscillator strengths for the valence and inner (P 2p,2s) shell photoabsorption, photoionization, and ionic photofragmentation of PF 3

    NASA Astrophysics Data System (ADS)

    Au, Jennifer W.; Brion, C. E.

    1997-08-01

    Absolute oscillator strengths (cross-sections) for the photoabsorption of phosphorus pentafluoride (PF 5) have been measured for the first time in the valence and phosphorus 2p discrete regions using high-resolution (0.0-0.1 eV fwhm), dipole ( e, e) spectroscopy. Long-range data (10-300 eV) have also been obtained at lower resolution (1 eV fwhm), from which the absolute oscillator strength scale has been determined using the valence-shell Thomas-Reiche-Kuhn sum-rule. The accuracy of the present measurement has been tested using the S(-2) sum rule normalization. Evaluation of the S(-2) sum using the presently reported absolute photoabsorption oscillator strength data gives a dipole polarizabilit for PF 5 in good agreement with the experimental value. The photoionization efficiencies, photoion branching ratios, and absolute partial oscillator strengths for molecular and dissociative photoionization have also been determined for PF 5 by dipole ( e, e+ion) coincidence spectroscopy from the first ionization threshold up to and above the phosphorus 2p edge.

  20. Determination of a natural valence-band offset - The case of HgTe and CdTe

    NASA Technical Reports Server (NTRS)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  1. Near valence-band electronic properties of semiconducting β -Ga2O3 (100) single crystals

    NASA Astrophysics Data System (ADS)

    Navarro-Quezada, A.; Alamé, S.; Esser, N.; Furthmüller, J.; Bechstedt, F.; Galazka, Z.; Skuridina, D.; Vogt, P.

    2015-11-01

    β -Ga2O3 is a transparent wide-band-gap semiconductor that has attracted considerable interest in recent years due to its suitable electrical conductivity and transparency in the ultraviolet spectral region. In this work we investigate the electronic properties of the near valence-band-edge region for semiconducting β -Ga2O3 (100) bulk single crystals using core-level photoelectron spectroscopy and ab initio theory within the framework of density functional theory and the GW approach. We find good agreement between the experimental results and the theoretical calculations. This is explained by the hybridization of the Ga 3 d and O 2 s states, similar as for In2O3 .

  2. Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency.

    PubMed

    Xu, Juan; Teng, Yiran; Teng, Fei

    2016-01-01

    Both energy band and charge separation and transfer are the crucial affecting factor for a photochemical reaction. Herein, the BiOCl nanosheets without and with surface bismuth vacancy (BOC, V-BOC) are prepared by a simple hydrothermal method. It is found that the new surface defect states caused by bismuth vacancy have greatly up-shifted the valence band and efficiently enhanced the separation and transfer rates of photogenerated electron and hole. It is amazing that the photocatalytic activity of V-BOC is 13.6 times higher than that of BOC for the degradation methyl orange (MO). We can develop an efficient photocatalyst by the introduction of defects. PMID:27586149

  3. Symmetry origins of the `caldera' valence band distortion in 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Li, Pengke; Appelbaum, Ian; Physics Department Team

    The electronic structures of many two-dimensional van der Waals semiconductors exhibit various fascinating properties distinct from their three-dimensional bulk counterparts. Through an examination of their lattice symmetries, we identify several universal rules dictating their band dispersion in the monolayer limit, where in-plane mirror symmetry and quantum confinement play critical roles. Taking group-III metal monochalcogenides (such as GaSe) as an example, we reveal the origin of the unusual `caldera' shape of the valence band edge (otherwise inelegantly dubbed an `upside down Mexican hat'), which we show is surprisingly common among other 2D semiconductors (such as in phosphorene for k along its zigzag direction). Reference: arXiv:1508.06963

  4. Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency

    PubMed Central

    Xu, Juan; Teng, Yiran; Teng, Fei

    2016-01-01

    Both energy band and charge separation and transfer are the crucial affecting factor for a photochemical reaction. Herein, the BiOCl nanosheets without and with surface bismuth vacancy (BOC, V-BOC) are prepared by a simple hydrothermal method. It is found that the new surface defect states caused by bismuth vacancy have greatly up-shifted the valence band and efficiently enhanced the separation and transfer rates of photogenerated electron and hole. It is amazing that the photocatalytic activity of V-BOC is 13.6 times higher than that of BOC for the degradation methyl orange (MO). We can develop an efficient photocatalyst by the introduction of defects. PMID:27586149

  5. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    SciTech Connect

    Wickramaratne, Darshana E-mail: rlake@ece.ucr.edu; Lake, Roger K. E-mail: rlake@ece.ucr.edu; Zahid, Ferdows

    2015-08-21

    The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a “Mexican hat” or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III–VI materials GaS, GaSe, InS, InSe, for Bi{sub 2}Se{sub 3}, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III–VI materials and Bi{sub 2}Se{sub 3} is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

  6. Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

    NASA Astrophysics Data System (ADS)

    Jiao, Wenyuan; Kong, Wei; Li, Jincheng; Collar, Kristen; Kim, Tong-Ho; Losurdo, Maria; Brown, April S.

    2016-03-01

    Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

  7. Site-specific intermolecular valence-band dispersion in α-phase crystalline films of cobalt phthalocyanine studied by angle-resolved photoemission spectroscopy

    SciTech Connect

    Yamane, Hiroyuki; Kosugi, Nobuhiro

    2014-12-14

    The valence band structure of α-phase crystalline films of cobalt phthalocyanine (CoPc) grown on Au(111) is investigated by using angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. The photo-induced change in the ARPES peaks is noticed in shape and energy of the highest occupied molecular orbital (HOMO, C 2p) and HOMO-1 (Co 3d) of CoPc, and is misleading the interpretation of the electronic properties of CoPc films. From the damage-free normal-emission ARPES measurement, the clear valence-band dispersion has been first observed, showing that orbital-specific behaviors are attributable to the interplay of the intermolecular π-π and π-d interactions. The HOMO band dispersion of 0.1 eV gives the lower limit of the hole mobility for α-CoPc of 28.9 cm{sup 2} V{sup −1} s{sup −1} at 15 K. The non-dispersive character of the split HOMO-1 bands indicates that the localization of the spin state is a possible origin of the antiferromagnetism.

  8. Valence Band Splitting on Multilayer MoS2: Mixing of Spin-Orbit Coupling and Interlayer Coupling.

    PubMed

    Fan, Xiaofeng; Singh, David J; Zheng, Weitao

    2016-06-16

    Understanding the origin of valence band splitting is important because it governs the unique spin and valley physics in few-layer MoS2. We explore the effects of spin-orbit coupling and interlayer coupling on few-layer MoS2 using first-principles methods. We find spin-orbit coupling has a major contribution to the valence band splitting at K in multilayer MoS2. In double-layer MoS2, the interlayer coupling leads to the widening of the gap between the already spin-orbit split states. This is also the case for the bands of the K-point in bulk MoS2. In triple-layer MoS2, the strength of interlayer coupling of the spin-up channel becomes different from that of spin-down at K. This combined with spin-orbit coupling results in the band splitting in two main valence bands at K. With the increase of pressure, this phenomenon becomes more obvious with a decrease of main energy gap in the splitting valence bands at the K valley. PMID:27225320

  9. Valence-band spectra of BEDT-TTF and TTF-based magnetic charge-transfer salts

    NASA Astrophysics Data System (ADS)

    Kurmaev, E. Z.; Moewes, A.; Chiuzbian, S. G.; Finkelstein, L. D.; Neumann, M.; Turner, S. S.; Day, P.

    2002-06-01

    The electronic structure of BEDT-TTF bis(ethylenedithio)tetrathiafulvalene, and TTF, tetrathiafulvalene, based ferrimagnetic insulating and paramagnetic semiconducting charge-transfer salts have been studied by x-ray emission spectroscopy (XES) and photoelectron spectroscopy (XPS). The counterions for the salts are the d-transition-metal complex anions [Cr(NCS)4(phen)]-, [Cr(NCS)4(Me2phen)]- and [Cr(NCS)4(isoq)2]- where Me2phen=4, 7-dimethyl-1, 10-phenanthroline, phen=1, 10-phenanthroline), and isoq=isoquinoline=C9H7N. The distribution of partial and total density of states was determined by comparing the XES spectra of the constituents (carbon and nitrogen Kα and Cr L2,3) with XPS valence-band spectra on the binding-energy scale. Splitting in the XPS N 1s and S 2p spectra was attributed to contributions from nonequivalent atoms, i.e., N in the NCS and phen based ligands, S in NCS and BEDT-TTF. Cr L-XES measured at the L2-threshold display an unusually high L2 to L3 intensity ratio, which is discussed in terms of Coster-Kronig transitions and a different excitation of L3 and L2 levels at the L2 threshold.

  10. Linear-Circular Dichroism of Four-Photon Absorption of Light in Semiconductors with a Complex Valence Band

    NASA Astrophysics Data System (ADS)

    Rasulov, R. Ya.; Rasulov, V. R.; Eshboltaev, I.

    2016-04-01

    Matrix elements of optical transitions occuring between the subbands of the valence band of a p-GaAs type semiconductor are calculated. Transitions associated with the non-simultaneous absorption of single photons and simultaneous absorption of two photons are taken into account. The expressions are obtained for the average values of the square modulus of matrix elements calculated with respect to the solid angle of the wave vector of holes. Linear-circular dichroism of four-photon absorption of light in semiconductors with a complex valence band is theoretically studied.

  11. Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

    SciTech Connect

    Li Lin; Qiu Jijun; Weng Binbin; Yuan Zijian; Shi Zhisheng; Li Xiaomin; Gan Xiaoyan; Sellers, Ian R.

    2012-12-24

    A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

  12. Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys

    SciTech Connect

    Jaworski, C. M.; Nielsen, Mechele; Wang, Hsin; Girard, Steven N.; Cai, Wei; Porter, Wallace D; Kanatzidis, Mercouri G.; Heremans, J. P.

    2013-01-01

    New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed: they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.

  13. Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

    NASA Astrophysics Data System (ADS)

    Minkov, G. M.; Germanenko, A. V.; Rut, O. E.; Sherstobitov, A. A.; Nestoklon, M. O.; Dvoretski, S. A.; Mikhailov, N. N.

    2016-04-01

    Energy spectra both of the conduction and valence bands of the HgTe quantum wells with a width close to the Dirac point were studied experimentally. Simultaneous analysis of the Shubnikov-de Haas oscillations and the Hall effect over a wide range of electron and hole densities yields surprising results: the top of the valence band is strongly split by spin-orbit interaction while the splitting of the conduction band is absent, within experimental accuracy. This holds true for the structures with normal and inverted band ordering. The results obtained are inconsistent with the results of kP calculations, in which the smooth electric field across the quantum well is only reckoned in. It is shown that taking into account the asymmetry of the quantum-well interfaces within a tight-binding method gives reasonable agreement with the experimental data.

  14. Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

    SciTech Connect

    King, Sean W. Brockman, Justin; Bielefeld, Jeff; French, Marc; Kuhn, Markus; Paquette, Michelle M.; Otto, Joseph W.; Caruso, A. N.; French, Benjamin

    2014-03-10

    To facilitate the design of heterostructure devices employing hexagonal/sp{sup 2} boron nitride, x-ray photoelectron spectroscopy has been utilized in conjunction with prior reflection electron energy loss spectroscopy measurements to determine the valence and conduction band offsets (VBOs and CBOs) present at interfaces formed between amorphous hydrogenated sp{sup 2} boron nitride (a-BN:H) and various low- and high-dielectric-constant (k) amorphous hydrogenated silicon network dielectric materials (a-SiX:H, X = O, N, C). For a-BN:H interfaces formed with wide-band-gap a-SiO{sub 2} and low-k a-SiOC:H materials (E{sub g} ≅ 8.2−8.8 eV), a type I band alignment was observed where the a-BN:H band gap (E{sub g} = 5.5 ± 0.2 eV) was bracketed by a relatively large VBO and CBO of ∼1.9 and 1.2 eV, respectively. Similarly, a type I alignment was observed between a-BN:H and high-k a-SiC:H where the a-SiC:H band gap (E{sub g} = 2.6 ± 0.2 eV) was bracketed by a-BN:H with VBO and CBO of 1.0 ± 0.1 and 1.9 ± 0.2 eV, respectively. The addition of O or N to a-SiC:H was observed to decrease the VBO and increase the CBO with a-BN:H. For high-k a-SiN:H (E{sub g} = 3.3 ± 0.2 eV) interfaces with a-BN:H, a slightly staggered type II band alignment was observed with VBO and CBO of 0.1 ± 0.1 and −2.3 ± 0.2 eV, respectively. The measured a-BN:H VBOs were found to be consistent with those deduced via application of the commutative and transitive rules to VBOs reported for a-BN:H, a-SiC:H, a-SiN:H, and a-SiO{sub 2} interfaces with Si (100)

  15. Control of valence and conduction band energies in layered transition metal phosphates via surface functionalization.

    PubMed

    Lentz, Levi C; Kolb, Brian; Kolpak, Alexie M

    2016-05-18

    Layered transition metal phosphates and phosphites (TMPs) are a class of materials composed of layers of 2D sheets bound together via van der Waals interactions and/or hydrogen bonds. Explored primarily for use in proton transfer, their unique chemical tunability also makes TMPs of interest for forming large-scale hybrid materials. Further, unlike many layered materials, TMPs can readily be solution exfoliated to form single 2D sheets or bilayers, making them exciting candidates for a variety of applications. However, the electronic properties of TMPs have largely been unstudied to date. In this work, we use first-principles computations to investigate the atomic and electronic structure of TMPs with a variety of stoichiometries. We demonstrate that there exists a strong linear relationship between the band gap and the ionic radius of the transition metal cation in these materials, and show that this relationship, which opens opportunities for engineering new compositions with a wide range of band gaps, arises from constraints imposed by the phosphorus-oxygen bond geometry. In addition, we find that the energies of the valence and conduction band edges can be systematically tuned over a range of ∼3 eV via modification of the functional group extending from the phosphorus. Based on the Hammett constant of this functional group, we identify a simple, predictive relationship for the ionization potential and electron affinity of layered TMPs. Our results thus provide guidelines for systematic design of TMP-derived functional materials, which may enable new approaches for optimizing charge transfer in electronics, photovoltaics, electrocatalysts, and other applications. PMID:27157509

  16. The role of beryllium in the band structure of MgZnO: Lifting the valence band maximum

    SciTech Connect

    Chen, S. S.; Pan, X. H. E-mail: yezz@zju.edu.cn; Chen, W.; Zhang, H. H.; Dai, W.; Ding, P.; Huang, J. Y.; Lu, B.; Ye, Z. Z. E-mail: yezz@zju.edu.cn

    2014-09-22

    We investigate the effect of Be on the valence band maximum (VBM) of MgZnO by measuring the band offsets of Mg{sub x}Zn{sub 1−x}O/Be{sub x}Mg{sub y}Zn{sub 1−x−y}O heterojunctions using X-ray photoelectron spectroscopy measurements. Mg{sub x}Zn{sub 1−x}O and Be{sub x}Mg{sub y}Zn{sub 1−x−y}O films have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The valence band offset (ΔE{sub V}) of Mg{sub 0.15}Zn{sub 0.85}O (E{sub g} = 3.62 eV)/Be{sub 0.005}Mg{sub 0.19}Zn{sub 0.805}O (E{sub g} = 3.73 eV) heterojunction is 0.01 eV and Be{sub 0.005}Mg{sub 0.19}Zn{sub 0.805}O has a lower VBM. The increased Mg composition is the main factor for the reduction of VBM. The VBM of Mg{sub x}Zn{sub 1−x}O is lower by 0.03 eV with the enlargement of E{sub g} from 3.62 eV to 3.73 eV by increasing Mg composition. Considering the effect of increased Mg composition, it is concluded that the little amount of Be makes the VBM go up by 0.02 eV when the E{sub g} of the alloy is 3.73 eV. The ΔE{sub V} of Mg{sub 0.11}Zn{sub 0.89}O (E{sub g} = 3.56 eV)/Be{sub 0.007}Mg{sub 0.12}Zn{sub 0.873}O (E{sub g} = 3.56 eV) heterojunction is calculated to be 0.03 eV and Be{sub 0.007}Mg{sub 0.12}Zn{sub 0.873}O has a higher VBM than Mg{sub 0.11}Zn{sub 0.89}O, which means that a little amount Be lifts the VBM by 0.03 eV when the E{sub g} of the alloy is 3.56 eV. The experimental measurements have offered a strong support for the theoretical research that alloying Be in Mg{sub x}Zn{sub 1−x}O alloys is hopeful to form a higher VBM and to enhance the p-type dopability of MgZnO.

  17. A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

    NASA Astrophysics Data System (ADS)

    Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; Li, Qiang; Uher, Ctirad

    2016-05-01

    SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ˜4 μB (Bohr magneton) of magnetic moment to Sn1-xMnxTe. The Curie temperature TC reaches ˜14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.

  18. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental–Theoretical Study

    PubMed Central

    2016-01-01

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125

  19. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental-Theoretical Study.

    PubMed

    Endres, James; Egger, David A; Kulbak, Michael; Kerner, Ross A; Zhao, Lianfeng; Silver, Scott H; Hodes, Gary; Rand, Barry P; Cahen, David; Kronik, Leeor; Kahn, Antoine

    2016-07-21

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125

  20. Experimental determination of the valence band of Bi2Se3

    NASA Astrophysics Data System (ADS)

    Gao, Yi-Bin; He, Bin; Androulakis, Ioannis; Heremans, Joseph P.

    2014-03-01

    P-type Bi2Se3 is predicted theoretically to have good thermoelectric properties, because its valence band has a high calculated density of states (DOS). In this presentation, p-type Bi2Se3 samples are prepared both as single crystals and as polycrystals. Shubnikov - de Haas (SdH) measurements are carried out in a rotating stage on single crystals to obtain the Fermi surface cross-sections and the cyclotron effective masses. Thermoelectric transport measurements are done on polycrystals, and used to construct Pisarenko plots of Seebeck coefficient versus hole concentration. The Fermi surface cross-section measurements confirm the theoretically predicted shape of the Fermi surface.Both cyclotron masses and Pisarenko plotsare in good agreement and show that p-type Bi2Se3 has a hole effective mass smaller than the theoretically predicted value. The reason for the discrepancy is not yet understood at this time. This work is supported by Gentherm Inc., 1321 Mountain View Circle, Azusa, CA 91702, USA and the U.S. Department of Energy, EERE, Vehicle Technologies, Propulsion Materials Program (DP).

  1. Crossover from impurity to valence band in diluted magnetic semiconductors: Role of Coulomb attraction by acceptors

    SciTech Connect

    Popescu, Florentin; Sen, Cengiz; Dagotto, Elbio R; Moreo, Adriana

    2007-01-01

    The crossover between an impurity band (IB) and a valence band (VB) regime as a function of the magnetic impurity concentration in a model for diluted magnetic semiconductors (DMSs) is studied systematically by taking into consideration the Coulomb attraction between the carriers and the magnetic impurities. The density of states and the ferromagnetic transition temperature of a spin-fermion model applied to DMSs are evaluated using dynamical mean-field theory and Monte Carlo (MC) calculations. It is shown that the addition of a square-well-like attractive potential can generate an IB at small enough Mn doping x for values of the p-d exchange J that are not strong enough to generate one by themselves. We observe that the IB merges with the VB when x>=xc where xc is a function of J and the Coulomb strength V. Using MC simulations, we demonstrate that the range of the Coulomb attraction plays an important role. While the on-site attraction, which has been used in previous numerical simulations, effectively renormalizes J for all values of x, an unphysical result, a nearest-neighbor range attraction renormalizes J only at very low dopings, i.e., until the bound holes wave functions start to overlap. Thus, our results indicate that the Coulomb attraction can be neglected to study Mn-doped GaSb, GaAs, and GaP in the relevant doping regimes, but it should be included in the case of Mn-doped GaN, which is expected to be in the IB regime.

  2. Anomalous temperature dependence in valence band spectra: A resonant photoemission study of layered perovskite Sr{sub 2}CoO{sub 4}

    SciTech Connect

    Pandey, Pankaj K.; Choudhary, R. J. Phase, D. M.

    2014-05-05

    Valence band spectra (VBS) and its modification across Curie temperature (T{sub C}) of Sr{sub 2}CoO{sub 4} thin film are studied using resonant photoemission spectroscopy. It is found that VBS mainly consists of hybridized states of Co-3d t{sub 2g}e{sub g} and O-2p; however, Co-3d e{sub g} states show its prominence only in the ferromagnetic temperature regime. Below T{sub C}, spectral weight transfer takes place anomalously from high binding energy (B.E.) region to low B.E. region, signifying the enhanced intermediate or low spin state Co{sup 4+} ions. It is suggested that spin-lattice coupling and many-body effects in Sr{sub 2}CoO{sub 4} derived from the strong electron correlations lead to such temperature dependence of VBS.

  3. Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

    SciTech Connect

    Inaoka, Takeshi Yanagisawa, Susumu; Kadekawa, Yukihiro

    2014-02-14

    By means of the first-principles density-functional theory, we investigate the effect of relative atom displacement in the crystal unit cell, namely, internal strain on the valence-band dispersion of strained silicon, and find close correlation of this effect with variation in the specific bond angles due to internal strain. We consider the [111] ([110]) band dispersion for (111) ((110)) biaxial tensility and [111] ([110]) uniaxial compression, because remarkably small values of hole effective mass m* can be obtained in this dispersion. Under the practical condition of no normal stress, biaxial tensility (uniaxial compression) involves additional normal compression (tensility) and internal strain. With an increase in the internal-strain parameter, the energy separation between the highest and second-highest valence bands becomes strikingly larger, and the highest band with conspicuously small m* extends remarkably down to a lower energy region, until it intersects or becomes admixed with the second band. This is closely correlated with the change in the specific bond angles, and this change can reasonably explain the above enlargement of the band separation.

  4. Valence band gaps and plasma energies for galena, sphalerite, and chalcopyrite natural minerals using differential optical reflectance spectroscopy

    NASA Astrophysics Data System (ADS)

    Todoran, R.; Todoran, D.; Szakacs, Zs.

    2015-12-01

    The paper presents the determinations of the valence band gaps and plasma energies of the galena, sphalerite and chalcopyrite natural minerals. The work was carried out using differential optical reflectance spectroscopy of the clean mineral surfaces. The determination of the optical properties such as refractive index, real part of the complex dielectric constant and the location of certain van Hove singularities, was carried out using the Kramers-Kronig formalism.

  5. Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

    SciTech Connect

    Akazawa, M.; Hashizume, T.; Gao, B.; Hiroki, M.; Yamahata, S.; Shigekawa, N.

    2011-01-01

    The valence band offsets, {Delta}E{sub V}, of In{sub 0.17}Al{sub 0.83}N/GaN, In{sub 0.25}Al{sub 0.75}N/GaN, and In{sub 0.30}Al{sub 0.70}N/GaN heterostructures grown by metal-organic vapor phase epitaxy were evaluated by using x-ray photoelectron spectroscopy (XPS). The dependence of the energy position and the full width at half maximum of the Al 2p spectrum on the exit angle indicated that there was sharp band bending caused by the polarization-induced electric field combined with surface Fermi-level pinning in each ultrathin InAlN layer. The {Delta}E{sub V} values evaluated without taking into account band bending indicated large discrepancies from the theoretical estimates for all samples. Erroneous results due to band bending were corrected by applying numerical calculations, which led to acceptable results. The evaluated {Delta}E{sub V} values were 0.2{+-}0.2 eV for In{sub 0.17}Al{sub 0.83}N/GaN, 0.1{+-}0.2 eV for In{sub 0.25}Al{sub 0.75}N/GaN, and 0.0{+-}0.2 eV for In{sub 0.30}Al{sub 0.70}N/GaN. Despite the large decrease of around 1.0 eV in the band gap of InAlN layers according to the increase in the In molar fraction, the decrease in {Delta}E{sub V} was as small as 0.2 eV. Therefore, the change in band-gap discontinuity was mainly distributed to that in conduction band offset.

  6. Direct determination of the band offset in atomic layer deposited ZnO/hydrogenated amorphous silicon heterojunctions from X-ray photoelectron spectroscopy valence band spectra

    SciTech Connect

    Korte, L. Rößler, R.; Pettenkofer, C.

    2014-05-28

    The chemical composition and band alignment at the heterointerface between atomic layer deposition-grown zinc oxide (ZnO) and hydrogenated amorphous silicon (a-Si:H) is investigated using monochromatized X-ray photoelectron spectroscopy. A new approach for obtaining the valence band offset ΔE{sub V} is developed, which consists in fitting the valence band (VB) spectrum obtained for a-Si:H with a thin ZnO overlayer as the sum of experimentally obtained VB spectra of a bulk a-Si:H film and a thick ZnO film. This approach allows obtaining ΔE{sub V} = 2.71 ± 0.15 eV with a minimum of assumptions, and also yields information on the change in band bending of both substrate and ZnO film. The band offset results are compared to values obtained using the usual approach of comparing valence band edge-to-core level energy differences, ΔE{sub B,CL} − ΔE{sub B,VB}. Furthermore, a theoretical value for the VB offset is calculated from the concept of charge neutrality level line-up, using literature data for the charge neutrality levels and the experimentally determined ZnO/a-Si:H interface dipole. The thus obtained value of ΔE{sub V}{sup CNL} = 2.65 ± 0.3 eV agrees well with the experimental ΔE{sub V}.

  7. A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

    DOE PAGESBeta

    Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; Li, Qiang; Uher, Ctirad

    2016-05-02

    Here, SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ~ 4 μB (Bohr magneton) of magnetic moment to Sn1-xMnxTe. The Curie temperature TC reaches ~ 14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorablymore » enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.« less

  8. Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe

    NASA Astrophysics Data System (ADS)

    Rybkovskiy, Dmitry V.; Osadchy, Alexander V.; Obraztsova, Elena D.

    2014-12-01

    By performing first-principles electronic structure calculations in frames of density functional theory we study the dependence of the valence band shape on the thickness of few-layer III-VI crystals (GaS, GaSe, and InSe). We estimate the critical thickness of transition from the bulklike parabolic to the ring-shaped valence band. Direct supercell calculations show that the ring-shaped extremum of the valence band appears in β -GaS and β -GaSe at a thickness below 6 tetralayers (˜4.6 nm ) and 8 tetralayers (˜6.4 nm ), respectively. Zone-folding calculations estimate the β -InSe critical thickness to be equal to 28 tetralayers (˜24.0 nm ). The origin of the ring-shaped valence band maximum can be understood in terms of k.p theory, which provides a link between the curvature of the energy bands and the distance between them. We explain the dependence of the band shape on the thickness, as well as the transition between two types of extremes, by the k -dependent orbital composition of the topmost valence band. We show that in the vicinity of critical thickness the effective mass of holes in III-VI compounds depends strongly on the number of tetralayers.

  9. Effects of ion aggregation on the intervalence transfer band of the mixed-valence biferrocenium cation in solution

    SciTech Connect

    Lowery, M.D.; Hammack, W.S.; Drickamer, H.G.; Hendrickson, D.N.

    1987-12-23

    The concentration dependence of the energy (E/sup op/) of the intervalence transfer (IT) electronic absorption band of mixed-valence biferrocenium triiodide dissolved in either nitrobenzene or dichloromethane is examined. In nitrobenzene, E/sup op/ increases rapidly from approx. 5.57 to approx. 6.05 x 10/sup 3/ cm/sup -1/ in the 0.24-0.4 mM range, whereupon further increases in the concentration of biferrocenium triiodide lead to E/sup op/ increasing more gradually to a value approx. 6.3 x 10/sup 3/ cm/sup -1/ at 24 mM. On the other hand, the full width at half maximum (..delta.. anti v/sub 1/2) and the transition moment of the IT band decrease with increasing concentration for biferrocenium triiodide in nitrobenzene. E/sup op/ increases, ..delta.. anti v/sub 1/2 remains constant, and the transition moment of the IT band increases with increasing concentration for biferrocenium triiodide in dichloromethane in the more limited range of 0.30-0.95 mM. These concentration dependencies of the IT band for biferrocenium triiodide are attributable to variable degrees of ion aggregation in solution. The concentration dependencies of the electrical conductivity of solutions of biferrocenium triiodide in either nitrobenzene or dichloromethane substantiate this proposal. IT band contours obtained at different concentrations are fit to the PKS vibronic model to yield parameters that characterize the electronic and vibronic coupling within the mixed-valence biferrocenium cation.

  10. Auroral excitation of the N2 2P(0,0) and VK(0,9) bands

    NASA Technical Reports Server (NTRS)

    Solomon, Stanley C.

    1989-01-01

    The low-energy secondary electron flux caused by auroral electron precipitation is examined using data from the Atmosphere Explorer C satellite. An energetic electron transport algorithm is used to compute the differential electron flux produced by measured primaries. Emissions of N2 in the 2P(0,0) band at 337 nm and the VK(0,9) band at 335 nm predicted by the model are compared with photometric observation of their combined volume emission rate altitude profile made by the visible airglow experiment. Reasonable correspondence between model and measurement is obtained. Ratios of emissions at 337 nm and 630 nm to the N2(+) 1N(0,0) band at 428 nm are also studied. It is concluded that the 337/428 nm ratio responds to changes in the characteristic energy of primary auroral electrons only insofar as part of the 337 nm brightness is due to N2 VK(0,9) emission. The 630/428 nm ratio, which is strongly dependent on characteristic energy, also varies significantly with changes in atomic oxygen density.

  11. Impact of [110]/(001) uniaxial stress on valence band structure and hole effective mass of silicon

    NASA Astrophysics Data System (ADS)

    Jianli, Ma; Heming, Zhang; Jianjun, Song; Guanyu, Wang; Xiaoyan, Wang; Xiaobo, Xu

    2011-02-01

    The valence band structure and hole effective mass of silicon under a uniaxial stress in (001) surface along the [110] direction were detailedly investigated in the framework of the k · p theory. The results demonstrated that the splitting energy between the top band and the second band for uniaxial compressive stress is bigger than that of the tensile one at the same stress magnitude, and of all common used crystallographic direction, such as [110], [001], [1¯10] and [100], the effective mass for the top band along [110] crystallographic direction is lower under uniaxial compressive stress compared with other stresses and crystallographic directions configurations. In view of suppressing the scattering and reducing the effective mass, the [110] crystallographic direction is most favorable to be used as transport direction of the charge carrier to enhancement mobility when a uniaxial compressive stress along [110] direction is applied. The obtained results can provide a theory reference for the design and the selective of optimum stress and crystallorgraphic direction configuration of uniaxial strained silicon devices.

  12. Systematic Study of the Effect of La2O3 Incorporation on the Flatband Voltage and Si Band Bending in the TiN/HfO2 /SiO2 /p-Si Stack

    SciTech Connect

    M Di; E Bersch; R Clark; S Consiglio; G Leusink; A Diebold

    2011-12-31

    Recent studies have shown that La{sub 2}O{sub 3} films can be used to adjust the threshold voltage (V{sub t}) of NMOS Hf-based high-k/metal gate devices to desirable values, and a dipole at the high-k/SiO{sub 2} interface has been proposed to explain the V{sub t} shifts. In order to investigate the mechanism of the V{sub t} shift further, we have measured the flatband voltage (V{sub fb}) and Si band bending of technologically relevant TiN/HfO{sub 2}/La{sub 2}O{sub 3}/SiO{sub 2}/p-Si stacks where the thickness and position of the La{sub 2}O{sub 3} layer have been systematically varied. We observed systematic changes in V{sub fb}, Si band bending and the HfO{sub 2}-Si valence band offset as a function of La{sub 2}O{sub 3} layer thickness and position. These changes can be explained by a band alignment model that includes a dipole at the high-k/SiO{sub 2} interface, thus supporting the work of previous authors. In addition, we have derived the theoretical relationship between V{sub fb} and Si band bending, which agrees well with our experimental measurements.

  13. Thermoelectric Enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands

    SciTech Connect

    Androulakis, John; Todorov, Iliya; Chung, Duck Young; Ballikaya, Sedat; Wang, Guoyu Y; Uher, Ctirad; Kanatzidis, Mercouri G.

    2010-09-16

    The effect of K and K-Na substitution for Pb atoms in the rocksalt lattice of PbTe was investigated to test a hypothesis for development of resonant states in the valence band that may enhance the thermoelectric power. We combined high-temperature Hall-effect, electrical conductivity, and thermal conductivity measurements to show that K-Na codoping do not form resonance states but can control the energy difference of the maxima of the two primary valence subbands in PbTe. This leads to an enhanced interband interaction with rising temperature and a significant rise in the thermoelectric figure of merit of p -type PbTe. The experimental data can be explained by a combination of a single- and two-band models for the valence band of PbTe depending on hole density that varies in the range of 1–15x1019 cm-3 .

  14. Thermoelectric enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands.

    SciTech Connect

    Androulakis, J.; Todorov, I.; Chung, D.-Y.; Ballikaya, S.; Wang, G.; Uher, C.; Kanatzidis, M.; Materials Science Division; Northwestern Univ.; Univ. of Michigan at Ann Arbor; Univ. of Istanbul

    2010-09-15

    The effect of K and K-Na substitution for Pb atoms in the rocksalt lattice of PbTe was investigated to test a hypothesis for development of resonant states in the valence band that may enhance the thermoelectric power. We combined high-temperature Hall-effect, electrical conductivity, and thermal conductivity measurements to show that K-Na codoping do not form resonance states but can control the energy difference of the maxima of the two primary valence subbands in PbTe. This leads to an enhanced interband interaction with rising temperature and a significant rise in the thermoelectric figure of merit of p-type PbTe. The experimental data can be explained by a combination of a single- and two-band models for the valence band of PbTe depending on hole density that varies in the range of 1-15 x 10{sup 19} cm{sup -3}.

  15. Deduction of the chemical state and the electronic structure of Nd{sub 2}Fe{sub 14}B compound from X-ray photoelectron spectroscopy core-level and valence-band spectra

    SciTech Connect

    Wang, Jing; Liang, Le; Zhang, Lanting E-mail: lmsun@sjtu.edu.cn; Sun, Limin E-mail: lmsun@sjtu.edu.cn; Hirano, Shinichi

    2014-10-28

    Characterization of chemical state and electronic structure of the technologically important Nd{sub 2}Fe{sub 14}B compound is attractive for understanding the physical nature of its excellent magnetic properties. X-ray photoelectron spectroscopy (XPS) study of such rare-earth compound is important and also challenging due to the easy oxidation of surface and small photoelectron cross-sections of rare-earth 4f electrons and B 2p electrons, etc. Here, we reported an investigation based on XPS spectra of Nd{sub 2}Fe{sub 14}B compound as a function of Ar ion sputtering time. The chemical state of Fe and that of B in Nd{sub 2}Fe{sub 14}B compound can be clearly determined to be 0 and −3, respectively. The Nd in Nd{sub 2}Fe{sub 14}B compound is found to have the chemical state of close to +3 instead of +3 as compared with the Nd in Nd{sub 2}O{sub 3}. In addition, by comparing the valence-band spectrum of Nd{sub 2}Fe{sub 14}B compound to that of the pure Fe, the contributions from Nd, Fe, and B to the valence-band structure of Nd{sub 2}Fe{sub 14}B compound is made more clear. The B 2p states and B 2s states are identified to be at ∼11.2 eV and ∼24.6 eV, respectively, which is reported for the first time. The contribution from Nd 4f states can be identified both in XPS core-level spectrum and XPS valence-band spectrum. Although Nd 4f states partially hybridize with Fe 3d states, Nd 4f states are mainly localized in Nd{sub 2}Fe{sub 14}B compound.

  16. Determination of the valence-band offset of CdS/CIS solar cell devices by target factor analysis

    SciTech Connect

    Niles, D.W.; Contreras, M.; Ramanathan, K.; Noufi, R.

    1996-05-01

    X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets ({Delta}E{sub v}) for CdS grown by chemical bath deposition on single-crystal and thin-film CuInSe{sub 2} (CIS). The thin-film CIS device was suitable for photovoltaic energy production. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitude of {Delta}E{sub v} was determined to be {Delta}E{sub v} = 1.06 {+-} 0.15 eV for both the single-crystal and thin-film interfaces. This determination of {Delta}E{sub v} is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices.

  17. Valence band structure of PDMS surface and a blend with MWCNTs: A UPS and MIES study of an insulating polymer

    NASA Astrophysics Data System (ADS)

    Schmerl, Natalya M.; Khodakov, Dmitriy A.; Stapleton, Andrew J.; Ellis, Amanda V.; Andersson, Gunther G.

    2015-10-01

    The use of polydimethylsiloxane (PDMS) is increasing with new technologies working toward compact, flexible and transparent devices for use in medical and microfluidic systems. Electronic characterization of PDMS and other insulating materials is difficult due to charging, yet necessary for many applications where the interfacial structure is vital to device function or further modification. The outermost layer in particular is of importance as this is the area where chemical reactions such as surface functionalization will occur. Here, we investigate the valence band structure of the outermost layer and near surface area of PDMS through the use of metastable induced photoelectron spectroscopy (MIES) paired with ultraviolet photoelectron spectroscopy (UPS). The chemical composition of the samples under investigation were measured via X-ray photoelectron spectroscopy (XPS), and the vertical distribution of the polymer was shown with neutral impact collision ion scattering spectroscopy (NICISS). Three separate methods for charge compensation are used for the samples, and their effectiveness is compared.

  18. The valence band structure of Ag{sub x}Rh{sub 1–x} alloy nanoparticles

    SciTech Connect

    Yang, Anli; Sakata, Osami; Kusada, Kohei; Kobayashi, Hirokazu; Yayama, Tomoe; Ishimoto, Takayoshi; Yoshikawa, Hideki; Koyama, Michihisa; and others

    2014-10-13

    The valence band (VB) structures of face-centered-cubic Ag-Rh alloy nanoparticles (NPs), which are known to have excellent hydrogen-storage properties, were investigated using bulk-sensitive hard x-ray photoelectron spectroscopy. The observed VB spectra profiles of the Ag-Rh alloy NPs do not resemble simple linear combinations of the VB spectra of Ag and Rh NPs. The observed VB hybridization was qualitatively reproduced via a first-principles calculation. The electronic structure of the Ag{sub 0.5}Rh{sub 0.5} alloy NPs near the Fermi edge was strikingly similar to that of Pd NPs, whose superior hydrogen-storage properties are well known.

  19. Theoretical study of optoelectronic properties of GaAs1-xBix alloys using valence band anticrossing model

    NASA Astrophysics Data System (ADS)

    Habchi, M. M.; Ben Nasr, A.; Rebey, A.; El Jani, B.

    2014-11-01

    The (12 × 12) and (14 × 14) valence band anticrossing (V-BAC) models were applied to calculate the electronic band structure of GaAs1-xBix dilute alloys along Δ-, Λ- and Σ-directions at room temperature. A comparative study based on these models was performed in terms of energy levels, optical transitions, spin-orbit splitting and effective mass. We found a significant reduction of the band-gap energy Eg by roughly 81 meV/%Bi accompanied by an increase in the spin-orbit splitting Δso+ by about 56 meV/%Bi. Furthermore, Δso+ does come into resonance with Eg at ∼12%Bi for resonance energy equal to 0.73 eV. An excellent agreement has occurred between the (14 × 14) V-BAC model predictions and experimental results reported in the literature. In addition, we have investigated the Bi composition and k-directions dependence of the effective mass at Γ point. A slight increase of the holes effective mass with x can affect the holes transport properties of GaAsBi. The intrinsic carrier density increases with both x and the temperature T, but it remains below 1010 cm-3 for x ⩽ 5% and T ⩽ 300 K.

  20. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

    PubMed Central

    2012-01-01

    A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV. PMID:23046910

  1. Spectral Correspondence to the Evolution of Chemical Bond and Valence Band in Oxidation

    NASA Astrophysics Data System (ADS)

    Sun, Chang Q.; Zhang, Sam; Hing, Peter; Wei, Jun; Xie, Hong; Wee, Andrew T. S.

    Spectroscopy covering energies around Fermi level of a metal is of particular interest as it does give direct information of bond forming and its consequence on the energy states (DOS). However, the origin of some outstanding spectral features from metal surface with chemisorbed oxygen has not yet been well established. It is shown in this letter that a bond-to-band model for oxidation enables the nature of a sum of spectral features to be consistently defined. All the spectral changes in the STS, XPS, UPS, photoemission spectroscopy (PES) and the thermal desorption spectroscopy (TDS) are classified by four DOS features around Fermi level and three bonding processes. Such a definition leads not only to new knowledge of the nature of O-metal interaction but also to a direct understanding of the bond-and-band forming dynamics.

  2. Coupled valence band dispersions and the quantum defect of excitons in Cu2O

    NASA Astrophysics Data System (ADS)

    Schöne, Florian; Krüger, Sjard-Ole; Grünwald, Peter; Aßmann, Marc; Heckötter, Julian; Thewes, Johannes; Stolz, Heinrich; Fröhlich, Dietmar; Bayer, Manfred; Scheel, Stefan

    2016-07-01

    Recent high-resolution absorption spectroscopy on highly excited excitons in cuprous oxide (Kazimierczuk et al 2014 Nature 514 343–347) have revealed significant deviations of their spectrum from the ideal hydrogen-like series. In atomic physics, the influence of the ionic core and the resulting modifications of the Coulomb interaction are accounted for by the introduction of a quantum defect. Here we translate this concept to the realm of semiconductor physics and show how the complex band dispersion of a crystal is mirrored in a set of empirical parameters similar to the quantum defect in atoms. Experimental data collected from high-resolution absorption spectroscopy in electric fields allow us to compare results for multiple angular momentum states of the yellow and even the green exciton series of {{Cu}}2{{O}}. The agreement between theory and experiment validates our assignment of the quantum defect to the nonparabolicity of the band dispersion.

  3. Generalized valence bond description of the ground states (X(1)Σg(+)) of homonuclear pnictogen diatomic molecules: N2, P2, and As2.

    PubMed

    Xu, Lu T; Dunning, Thom H

    2015-06-01

    The ground state, X1Σg+, of N2 is a textbook example of a molecule with a triple bond consisting of one σ and two π bonds. This assignment, which is usually rationalized using molecular orbital (MO) theory, implicitly assumes that the spins of the three pairs of electrons involved in the bonds are singlet-coupled (perfect pairing). However, for a six-electron singlet state, there are five distinct ways to couple the electron spins. The generalized valence bond (GVB) wave function lifts this restriction, including all of the five spin functions for the six electrons involved in the bond. For N2, we find that the perfect pairing spin function is indeed dominant at Re but that it becomes progressively less so from N2 to P2 and As2. Although the perfect pairing spin function is still the most important spin function in P2, the importance of a quasi-atomic spin function, which singlet couples the spins of the electrons in the σ orbitals while high spin coupling those of the electrons in the π orbitals on each center, has significantly increased relative to N2 and, in As2, the perfect pairing and quasi-atomic spin couplings are on essentially the same footing. This change in the spin coupling of the electrons in the bonding orbitals down the periodic table may contribute to the rather dramatic decrease in the strengths of the Pn2 bonds from N2 to As2 as well as in the increase in their chemical reactivity and should be taken into account in more detailed analyses of the bond energies in these species. We also compare the spin coupling in N2 with that in C2, where the quasi-atomic spin coupling dominants around Re. PMID:26575549

  4. Intra-valence-band mixing in strain-compensated SiGe quantum wells

    NASA Astrophysics Data System (ADS)

    Tsujino, S.; Borak, A.; Falub, C.; Fromherz, T.; Diehl, L.; Sigg, H.; Grützmacher, D.

    2005-10-01

    We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the intersubband transitions energies from the ground state to the excited heavy hole (HH), light hole (LH), and split-off (SO) hole states up to ˜0.5eV are resolved. When HH2 is within ˜30meV of LH1 or SO1 a partial transfer of the HH1-HH2 oscillator strength to the HH1-LH1 or HH1-SO1 transitions is observed, which is otherwise forbidden for light polarized perpendicular to the plane of the wells. This is a clear sign of mixing between the HH and LH or SO states. A large temperature induced broadening of HH1-HH2 transition peak is observed for narrow wells indicating nonparabolic dispersion of the HH2 states due to the mixing with the LH/SO continuum. We found that the observations are in good agreement with the six-band k•p theory. A possible role of many-body effects in the temperature-induced negative peak shift is discussed.

  5. Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang; Li, Lin; Yuan, Ye; Rushforth, A. W.; Chen, Lin; Wang, Yutian; Böttger, R.; Heller, R.; Zhao, Jianhua; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Timm, C.; Helm, M.

    2016-08-01

    For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature (TC) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of TC with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of TC below 10 K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

  6. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

    NASA Astrophysics Data System (ADS)

    Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.

    2016-06-01

    A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulator-metal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature Tj is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K ≈ 0.15 and temperature Tj, the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3Tj/2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to Tj hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (-1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the

  7. Vertical photoionization of liquid-to-supercritical ammonia: thermal effects on the valence-to-conduction band gap.

    PubMed

    Urbanek, Janus; Vöhringer, Peter

    2013-07-25

    We recently reported first femtosecond pump–probe experiments on the geminate recombination dynamics of solvated electrons in fluid ammonia (Urbanek et al., J. Phys. Chem. B 2012, 116, 2223–2233). The electrons were generated through a vertical two-photon ionization at a total energy of 9.3 eV. Here, we present a full Monte Carlo analysis of the time-resolved data to determine the solvated electron’s thermalization distance from the ionization hole, NH(3)(+). The simulations are compared with the experiment over wide thermodynamic conditions to obtain insight into the dependence of the vertical ionization mechanism on the electronic properties of the solvent network. The simulations reveal that the average thermalization distance, , decreases strongly with both increasing temperature, T, and decreasing density, ρ, from 3.2 nm in the cryogenic fluid down to roughly 0.5 nm in the dilute supercritical phase with almost gas-like densities. We combine our results with the current understanding of the T,ρ-dependence of the electronic structure of the liquid phase and discuss in detail the role of thermally induced energy level shifts for the valence-to-conduction band gap. The observed changes of the thermalization distance can be well attributed to a gradual decrease of the excess energy initially imparted on the ejected electron as gas-like conditions are progressively approached. PMID:23815751

  8. Valence Band Dependent Charge Transport in Bulk Molecular Electronic Devices Incorporating Highly Conjugated Multi-[(Porphinato)Metal] Oligomers.

    PubMed

    Bruce, Robert C; Wang, Ruobing; Rawson, Jeff; Therien, Michael J; You, Wei

    2016-02-24

    Molecular electronics offers the potential to control device functions through the fundamental electronic properties of individual molecules, but realization of such possibilities is typically frustrated when such specialized molecules are integrated into a larger area device. Here we utilize highly conjugated (porphinato)metal-based oligomers (PM(n) structures) as molecular wire components of nanotransfer printed (nTP) molecular junctions; electrical characterization of these "bulk" nTP devices highlights device resistances that depend on PM(n) wire length. Device resistance measurements, determined as a function of PM(n) molecular length, were utilized to evaluate the magnitude of a phenomenological β corresponding to the resistance decay parameter across the barrier; these data show that the magnitude of this β value is modulated via porphyrin macrocycle central metal atom substitution [β(PZn(n); 0.065 Å(-1)) < β(PCu(n); 0.132 Å(-1)) < β(PNi(n); 0.176 Å(-1))]. Cyclic voltammetric data, and ultraviolet photoelectron spectroscopic studies carried out at gold surfaces, demonstrate that these nTP device resistances track with the valence band energy levels of the PM(n) wire, which were modulated via porphyrin macrocycle central metal atom substitution. This study demonstrates the ability to fabricate "bulk" and scalable electronic devices in which function derives from the electronic properties of discrete single molecules, and underscores how a critical device function--wire resistance--may be straightforwardly engineered by PM(n) molecular composition. PMID:26829704

  9. Valence band structure and magnetic properties of Co-doped Fe3O4(100) films

    NASA Astrophysics Data System (ADS)

    Ran, F. Y.; Tsunemaru, Y.; Hasegawa, T.; Takeichi, Y.; Harasawa, A.; Yaji, K.; Kim, S.; Kakizaki, A.

    2011-06-01

    Structural and magnetic properties, and the valence band structure of pure and Co-doped (up to 33%) Fe3O4(100) films were investigated. Reconstruction of the Fe3O4(100) surface is found to be blocked by Co doping. Doped Co ions in Fe3O4 are in a charge state of 2 + and substitute the Fe2+ in the B site of Fe3O4. All the films exhibit room temperature ferromagnetism. Co doping changes the coercivity and reduces saturation magnetization. The density of states near the Fermi level is reduced by Co doping due to the decrease of Fe2+ in the B site, which might responsible for the decrease in conductivity and magnetoresistance of Co-doped Fe3O4. The Verwey transition in the range of 100-120 K is observed for the pure Fe3O4 film, while no transition could be detected for Co-doped Fe3O4 films.

  10. Photoluminescence determination of valence-band symmetry and Auger-1 threshold energy in biaxially compressed InAsSb layers

    SciTech Connect

    Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.

    1994-08-01

    InAsSb/InGaAs strained-layer superlattices (SLSs) and InAsSb quantum wells, both with biaxially compressed InAsSb layers, were characterized using magneto-photoluminescence and compared with unstained InAsSb and InAs alloys. In heterostructures with biaxially compressed InAsSb, the holes exhibited a decrease in effective mass, approaching that of the electrons. Correcting the data for the magneto-exciton binding energy, we obtain electron-hole reduced mass values in the range, {mu}=0.010--0.015, for the InAsSb heterostructures, whereas {mu}=0.026 and {mu}-0.023 for unstrained InAsSb and InAs alloys respectively. In the 2-dimensional limit, a large increase in the Auger-1 threshold energy accompanies this strain-induced change in valence-band symmetry. Correspondingly, the activation energy for nonradiative recombination in the SLSs displayed a marked increase compared with that of the unstrained alloys.

  11. Duplication and deletion of chromosome band 2(p21p22) resulting from a familial interstitial insertion (2;11)(p21;p15)

    SciTech Connect

    Sawyer, J.R.; Jones, E.; Hawks, F.F.; Quirk, J.G. Jr.; Cunniff, C.

    1994-02-15

    Routine amniocentesis for advanced maternal age led to the prenatal diagnosis of a fetus with a karyotype of a 46,XX,del(2)(p21p22). At delivery the baby had holopresencephaly as the major clinical finding, which has been associated with a deletion of band 2p21 in several other case reports. Chromosome studies of the parents showed a normal 46,XY karyotype in the father, and a balanced interstitial insertion 46,XX dir ins (11;2)(p15.1;p21p22) in the mother. Subsequent chromosome studies of other relatives documented a 23-year-old half-brother of the proposita with a partial trisomy for the segment deleted in the proposita. The half-brother showed the derivative chromosome 11 from the mother, resulting in a 46,XY,der(11)dup(2)(p21p22) karyotype. Major clinical findings include short stature, mild development delay, and behavior abnormalities. A half-sister of the proposita is also a balanced carrier of the dir ins (11;2)(p15.1;p21p22.2). The association of the deletion chromosome band 2p21 and the clinical finding of holoprosencephaly is further supported by the findings in this family. 9 refs., 5 figs.

  12. Valence band offsets of Sc x Ga1‑x N/AlN and Sc x Ga1‑x N/GaN heterojunctions

    NASA Astrophysics Data System (ADS)

    Tsui, H. C. L.; Goff, L. E.; Palgrave, R. G.; Beere, H. E.; Farrer, I.; Ritchie, D. A.; Moram, M. A.

    2016-07-01

    The valence band offsets of Sc x Ga1‑x N/AlN heterojunctions were measured by x-ray photoelectron spectroscopy (XPS) and were found to increase from 0.42 eV to 0.95 eV as the Sc content x increased from 0 to 0.15. The increase in valence band offset with increasing x is attributed to the corresponding increase in spontaneous polarization of the wurtzite structure. The Sc x Ga1‑x N/AlN heterojunction is type I, similar to other III-nitride-based heterojunctions. The data also indicate that a type II staggered heterojunction, which can enhance spatial charge separation, could be formed if Sc x Ga1‑x N is grown on GaN.

  13. Influence of leaching on surface composition, microstructure, and valence band of single grain icosahedral Al-Cu-Fe quasicrystal

    NASA Astrophysics Data System (ADS)

    Lowe, M.; Yadav, T. P.; Fournée, V.; Ledieu, J.; McGrath, R.; Sharma, H. R.

    2015-03-01

    The use of quasicrystals as precursors to catalysts for the steam reforming of methanol is potentially one of the most important applications of these new materials. To develop application as a technology requires a detailed understanding of the microscopic behavior of the catalyst. Here, we report the effect of leaching treatments on the surface microstructure, chemical composition, and valence band of the icosahedral (i-) Al-Cu-Fe quasicrystal in an attempt to prepare a model catalyst. The high symmetry fivefold surface of a single grain i-Al-Cu-Fe quasicrystal was leached with NaOH solution for varying times, and the resulting surface was characterized by x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The leaching treatments preferentially remove Al producing a capping layer consisting of Fe and Cu oxides. The subsurface layer contains elemental Fe and Cu in addition to the oxides. The quasicrystalline bulk structure beneath remains unchanged. The subsurface gradually becomes Fe3O4 rich with increasing leaching time. The surface after leaching exhibits micron sized dodecahedral cavities due to preferential leaching along the fivefold axis. Nanoparticles of the transition metals and their oxides are precipitated on the surface after leaching. The size of the nanoparticles is estimated by high resolution transmission microscopy to be 5-20 nm, which is in agreement with the AFM results. Selected area electron diffraction (SAED) confirms the crystalline nature of the nanoparticles. SAED further reveals the formation of an interface between the high atomic density lattice planes of nanoparticles and the quasicrystal. These results provide an important insight into the preparation of model catalysts of nanoparticles for steam reforming of methanol.

  14. Influence of leaching on surface composition, microstructure, and valence band of single grain icosahedral Al-Cu-Fe quasicrystal

    SciTech Connect

    Lowe, M.; McGrath, R.; Sharma, H. R.; Yadav, T. P.; Fournée, V.; Ledieu, J.

    2015-03-07

    The use of quasicrystals as precursors to catalysts for the steam reforming of methanol is potentially one of the most important applications of these new materials. To develop application as a technology requires a detailed understanding of the microscopic behavior of the catalyst. Here, we report the effect of leaching treatments on the surface microstructure, chemical composition, and valence band of the icosahedral (i-) Al-Cu-Fe quasicrystal in an attempt to prepare a model catalyst. The high symmetry fivefold surface of a single grain i-Al-Cu-Fe quasicrystal was leached with NaOH solution for varying times, and the resulting surface was characterized by x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The leaching treatments preferentially remove Al producing a capping layer consisting of Fe and Cu oxides. The subsurface layer contains elemental Fe and Cu in addition to the oxides. The quasicrystalline bulk structure beneath remains unchanged. The subsurface gradually becomes Fe{sub 3}O{sub 4} rich with increasing leaching time. The surface after leaching exhibits micron sized dodecahedral cavities due to preferential leaching along the fivefold axis. Nanoparticles of the transition metals and their oxides are precipitated on the surface after leaching. The size of the nanoparticles is estimated by high resolution transmission microscopy to be 5-20 nm, which is in agreement with the AFM results. Selected area electron diffraction (SAED) confirms the crystalline nature of the nanoparticles. SAED further reveals the formation of an interface between the high atomic density lattice planes of nanoparticles and the quasicrystal. These results provide an important insight into the preparation of model catalysts of nanoparticles for steam reforming of methanol.

  15. Measurement of the low energy spectral contribution in coincidence with valence band (VB) energy levels of Ag(100) using VB-VB coincidence spectroscopy

    NASA Astrophysics Data System (ADS)

    Gladen, R. W.; Joglekar, P. V.; Lim, Z. H.; Shastry, K.; Hulbert, S. L.; Weiss, A. H.

    A set of coincidence measurements were obtained for the study and measurement of the electron contribution arising from the inter-valence band (VB) transitions along with the inelastically scattered VB electron contribution. These Auger-unrelated contributions arise in the Auger spectrum (Ag 4p NVV) obtained using Auger Photoelectron Coincidence Spectroscopy (APECS). The measured Auger-unrelated contribution can be eliminated from Auger spectrum to obtain the spectrum related to Auger. In our VB-VB coincidence measurement, a photon beam of energy 180eV was used to probe the Ag(100) sample. The coincidence spectrum was obtained using two Cylindrical Mirror Analyzers (CMA's). The scan CMA measured the low energy electron contribution in the energy range 0-70eV in coincidence with VB electrons measured by the fixed CMA. In this talk, we present the data obtained for VB-VB coincidence at the valence band energy of 171eV along with the coincidence measurements in the energy range of 4p core and valence band. NSF DMR 0907679, NSF Award Number: 1213727. Use of the National Synchrotron Light Source, Brookhaven National Laboratory, was supported by the U.S. DOE, Office of Science, Office of Basic Energy Sciences, under Contract No. DEAC02-98CH10886.

  16. Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

    NASA Astrophysics Data System (ADS)

    Hossain, M. I.; Ikonic, Z.; Watson, J.; Shao, J.; Harrison, P.; Manfra, M. J.; Malis, O.

    2013-02-01

    We report strong mid-infrared absorption of in-plane polarized light due to heavy-to-light hole intersubband transitions in the valence band of C-doped GaAs quantum wells with AlAs barriers. The transition energies are well reproduced by theoretical calculations including layer inter-diffusion. The inter-diffusion length was estimated to be 8 ± 2 Å, a value that is consistent with electron microscopy measurements. These results highlight the importance of modeling the nanoscale structure of the semiconductors for accurately reproducing intra-band transition energies of heavy carriers such as the holes.

  17. Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs(1-y)Sb(y) with Tunable Antimony Composition.

    PubMed

    Liu, Jheng-Sin; Clavel, Michael; Hudait, Mantu K

    2015-12-30

    Mixed-anion, GaAs1-ySby metamorphic materials with tunable antimony (Sb) compositions extending from 0 to 100%, grown by solid source molecular beam epitaxy (MBE), were used to investigate the evolution of interfacial chemistry under different passivation conditions. X-ray photoelectron spectroscopy (XPS) was used to determine the change in chemical state progression as a function of surface preclean and passivation, as well as the valence band offsets, conduction band offsets, energy band parameters, and bandgap of atomic layer deposited Al2O3 on GaAs1-ySby for the first time, which is further corroborated by X-ray analysis and cross-sectional transmission electron microscopy. Detailed XPS analysis revealed that the near midpoint composition, GaAs0.45Sb0.55, passivation scheme exhibits a GaAs-like surface, and that precleaning by HCl and (NH4)2S passivation are mandatory to remove native oxides from the surface of GaAsSb. The valence band offsets, ΔEv, were determined from the difference in the core level to the valence band maximum binding energy of GaAs1-ySby. A valence band offset of >2 eV for all Sb compositions was found, indicating the potential of utilizing Al2O3 on GaAs1-ySby (0 ≤ y ≤ 1) for p-type metal-oxide-semiconductor (MOS) applications. Moreover, Al2O3 showed conduction band offset of ∼2 eV on GaAs1-ySby (0 ≤ y ≤ 1), suggesting Al2O3 dielectric can also be used for n-type MOS applications. The surface passivation of GaAs0.45Sb0.55 materials and the detailed band alignment analysis of Al2O3 high-κ dielectrics on tunable Sb composition, GaAs1-ySby materials, provides a pathway to utilize GaAsSb materials in future microelectronic and optoelectronic applications. PMID:26642121

  18. Optical population of iodine molecule ion-pair states via MI2 vdW complexes, M = I2, Xe, of valence states correlating with the third, I(2 P 1/2) + I(2 P 1/2), dissociation limit

    NASA Astrophysics Data System (ADS)

    Lukashov, S. S.; Poretsky, S. A.; Pravilov, A. M.; Khadikova, E. I.; Shevchenko, E. V.

    2010-10-01

    The first results of measurements and analysis of excitation spectra of the λlum = 3250 Å luminescence corresponding to I2( D0{/u +} → X0{/g +}) transition as well as luminescence at λlum = 3400 Å, where I2( D'2 g → A'2 u and/or β1 g → A1 u ) transitions occur, observed after three-step, λ1 + λ f + λ1, λ1 = 5321-5508.2 Å, λ f = 10644.0 Å, laser excitation of pure iodine vapour and I2 + Xe mixtures at room temperature via MI2 vdW complexes, M = I2, Xe, of the I2(0{/g +}, 1 u ( bb)) valence states correlating with the third, I(2 P 1/2) + I(2 P 1/2) (I2( bb)), dissociation limit are presented. Luminescence spectra in the λlum = 2200-3500 Å spectral range are also analyzed. Strong luminescence from the I2(D) and, probably, I2(D' and β) states is observed. We discuss three alternative mechanisms of optical population of the IP state. In our opinion, the mechanism including the MI2 complexes is the most probable.

  19. Optical population of iodine molecule ion-pair states via valence states correlating with the third, I(2 P 1/2) + I(2 P 1/2), dissociation limit and their MI2 vdW complexes, M = I2, Xe

    NASA Astrophysics Data System (ADS)

    Lukashov, S. S.; Poretsky, S. A.; Pravilov, A. M.; Khadikova, E. I.; Shevchenko, E. V.

    2010-10-01

    The first results of measurements and analysis of excitation spectra of the I2( D0{/u +} → X0{/g +}) and I2( D0{/u +} → X0{/g +} and/or β1 g → A1 u ) luminescence, observed after three-step, λ1 + λ f + λ1, λ1 = 5508-5530 Å, λ f = 10644.0 Å, laser excitation of pure iodine vapour and I2 + Xe mixtures at room temperature via bound parts of the I2(0{/g +}, 1 u ( bb)) valence states correlating with the third, I(2 P 1/2) + I(2 P 1/2), dissociation limit and their MI2 vdW complexes, M = I2, Xe, are presented. Luminescence spectra in the λlum = 2200-5000 Å spectral range are also analyzed. Strong luminescence from the I2( D, γ, D', and/or β) states is observed, though the two latter may be populated in optical transitions in a free iodine molecule if hyperfine coupling of the I2(0{/g +} and 1 u ( bb)) state rovibronic levels occurs. We discuss possible mechanisms of optical population of the IP state.

  20. Interaction of Cr3+ with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr3+, studied by ENDOR spectroscopy

    NASA Astrophysics Data System (ADS)

    Binet, Laurent; Sharma, Suchinder K.; Gourier, Didier

    2016-09-01

    Cr3+-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of 71/69Ga and 53Cr nuclei was performed in ZnGa2O4:Cr3+ to get information on the interaction of Cr3+ with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the 4A2 ground state of Cr3+ with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited 2E and 4T2 states of Cr3+. It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr3+ in distorted sites undergoing local electric field produced by neighboring defects with opposite charges.

  1. Interaction of Cr(3+) with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr(3+), studied by ENDOR spectroscopy.

    PubMed

    Binet, Laurent; Sharma, Suchinder K; Gourier, Didier

    2016-09-28

    Cr(3+)-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of (71/69)Ga and (53)Cr nuclei was performed in ZnGa2O4:Cr(3+) to get information on the interaction of Cr(3+) with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the (4)A2 ground state of Cr(3+) with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited (2)E and (4)T2 states of Cr(3+). It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr(3+) in distorted sites undergoing local electric field produced by neighboring defects with opposite charges. PMID:27460505

  2. Two-band model for halogen-bridged mixed-valence transition-metal complexes. I. Ground state and excitation spectrum

    NASA Astrophysics Data System (ADS)

    Gammel, J. Tinka; Saxena, A.; Batistić, I.; Bishop, A. R.; Phillpot, S. R.

    1992-03-01

    We consider a 3/4-filled, two-band discrete tight-binding Peierls-Hubbard model for an isolated chain of a halogen-bridged, mixed-valence, transition-metal linear-chain complex (HMMC or MX chain). We have employed the adiabatic approximation in which the quantum fluctuations associated with phonons are implicitly treated as an external field for the electrons, and treat electron-electron effects in the Hartree-Fock approximation. We investigate ground states as functions of the model parameters and doping-induced and photoinduced excitations-kinks, polarons, bipolarons, and excitons. Results for several experimental observables, including the lattice distortion, the excess charge and spin densities of defects, and the optical absorption, are compiled. For the ground state, we find that the bond-order-wave (BOW) portion of the one-band phase diagram is eliminated from the two-band phase diagram, in agreement with the lack of real materials in the pure BOW phase. The extent of electron-hole asymmetry and of spatial localization or delocalization of defects is explored. Two separate solitons or polarons are compared with corresponding bipolarons. We demonstrate explicitly the need to employ the two-band model for a realistic modeling of the MX systems, focusing on three specific systems: (a) highly distorted, valence-localized (strongly charge-disproportionated) PtCl, (b) moderately distorted PtBr, and (c) weakly distorted, valence-delocalized (weak charge-density wave) PtI. The compilation of results reported here constitutes a reference resource against which the rapidly expanding experimental data can be compared.

  3. Size and alloying induced shift in core and valence bands of Pd-Ag and Pd-Cu nanoparticles

    SciTech Connect

    Sengar, Saurabh K.; Mehta, B. R.; Govind

    2014-03-28

    In this report, X-ray photoelectron spectroscopy studies have been carried out on Pd, Ag, Cu, Pd-Ag, and Pd-Cu nanoparticles having identical sizes corresponding to mobility equivalent diameters of 60, 40, and 20 nm. The nanoparticles were prepared by the gas phase synthesis method. The effect of size on valence and core levels in metal and alloy nanoparticles has been studied by comparing the values to those with the 60 nm nanoparticles. The effect of alloying has been investigated by comparing the valence and core level binding energies of Pd-Cu and Pd-Ag alloy nanoparticles with the corresponding values for Pd, Ag, and Cu nanoparticles of identical sizes. These effects have been explained in terms of size induced lattice contractions, alloying induced charge transfer, and hybridization effects. The observation of alloying and size induced binding energy shifts in bimetallic nanoparticles is important from the point of view of hydrogen reactivity.

  4. Spectroscopy of neutron-rich {sup 168,170}Dy: Yrast band evolution close to the N{sub p}N{sub n} valence maximum

    SciTech Connect

    Soederstroem, P.-A.; Nyberg, J.; Regan, P. H.; Ashley, S. F.; Catford, W. N.; Gelletly, W.; Jones, G. A.; Liu, Z.; Pietri, S.; Podolyak, Zs.; Steer, S. J.; Thompson, N. J.; Williams, S. J.; Algora, A.; Angelis, G. de; Corradi, L.; Fioretto, E.; Gottardo, A.; Grodner, E.; He, C. Y.

    2010-03-15

    The yrast sequence of the neutron-rich dysprosium isotope {sup 168}Dy has been studied using multinucleon transfer reactions following collisions between a 460-MeV {sup 82}Se beam and an {sup 170}Er target. The reaction products were identified using the PRISMA magnetic spectrometer and the gamma rays detected using the CLARA HPGe-detector array. The 2{sup +} and 4{sup +} members of the previously measured ground-state rotational band of {sup 168}Dy have been confirmed and the yrast band extended up to 10{sup +}. A tentative candidate for the 4{sup +}->2{sup +} transition in {sup 170}Dy was also identified. The data on these nuclei and on the lighter even-even dysprosium isotopes are interpreted in terms of total Routhian surface calculations and the evolution of collectivity in the vicinity of the proton-neutron valence product maximum is discussed.

  5. Neutral-Type One-Dimensional Mixed-Valence Halogen-Bridged Platinum Chain Complexes with Large Charge-Transfer Band Gaps.

    PubMed

    Otake, Ken-Ichi; Otsubo, Kazuya; Sugimoto, Kunihisa; Fujiwara, Akihiko; Kitagawa, Hiroshi

    2016-03-01

    One-dimensional (1D) electronic systems have attracted significant attention for a long time because of their various physical properties. Among 1D electronic systems, 1D halogen-bridged mixed-valence transition-metal complexes (the so-called MX chains) have been thoroughly studied owing to designable structures and electronic states. Here, we report the syntheses, structures, and electronic properties of three kinds of novel neutral MX-chain complexes. The crystal structures consist of 1D chains of Pt-X repeating units with (1R,2R)-(-)-diaminocychlohexane and CN(-) in-plane ligands. Because of the absence of a counteranion, the neutral MX chains have short interchain distances, so that strong interchain electronic interaction is expected. Resonance Raman spectra and diffuse-reflectance UV-vis spectra indicate that their electronic states are mixed-valence states (charge-density-wave state: Pt(2+)···X-Pt(4+)-X···Pt(2+)···X-Pt(4+)-X···). In addition, the relationship between the intervalence charge-transfer (IVCT) band gap and the degree of distortion of the 1D chain shows that the neutral MX chains have a larger IVCT band gap than that of cationic MX-chain complexes. These results provide new insight into the physical and electronic properties of 1D chain compounds. PMID:26901774

  6. The observation of valence band change on resistive switching of epitaxial Pr0.7Ca0.3MnO3 film using removable liquid electrode

    NASA Astrophysics Data System (ADS)

    Lee, Hong-Sub; Park, Hyung-Ho

    2015-12-01

    The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr0.7Ca0.3MnO3 (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO3 (100) single crystal as the substrate to observe changes in the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.

  7. Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy

    NASA Astrophysics Data System (ADS)

    Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Gombia, Enos; Longo, Massimo

    2008-03-01

    The valence band discontinuity of the lattice matched In0.48Ga0.52P/GaAs heterostructure was determined through a careful analysis of the temperature and frequency dependence of the admittance of p+/MQW/n+ structures, formed by a nominally undoped InGaP/GaAs multiple quantum well region, interposed between p+ and n+ GaAs layers. The heterostructures were grown through metal organic vapor phase epitaxy by using tertiary butyl arsine and tertiary butyl phosphine as alternative precursors for the V-group elements. The growth conditions were optimized for obtaining sharp interfaces and negligible ordering effects in the cation sublattice. Accounting for the temperature dependence of the Fermi energy and the calculated confining energy (10meV) of the heavy holes in the wells, a valence band offset ΔEV=(356±5)meV was derived from the temperature variation of the resonance frequency at which the isothermal conductance over frequency G(ω)/ω curves show a maximum. The experimental uncertainty of this result is significantly low if compared with the wide range (240-400meV) of the previously reported ΔEV values. By considering the band gap difference between InGaP and GaAs, a conduction band offset ΔEC=119meV was estimated. The accuracy of the experimental procedure and the reliability of the main assumptions of the admittance spectroscopy measurements were accurately checked. The obtained results were discussed in light of the large and growing amount of literature data by taking into account the influence of the growth conditions on the physical properties of the InGaP/GaAs quantum wells.

  8. Association between HRP–2/pLDH rapid diagnostic test band positivity and malaria–related anemia at a peripheral health facility in Western Uganda

    PubMed Central

    Boyce, Ross; Reyes, Raquel; Ntaro, Moses; Mulogo, Edgar; Matte, Michael; Boum, Yap; Siedner, Mark J.

    2015-01-01

    The detection of severe malaria in resource–constrained settings is often difficult because of requirements for laboratory infrastructure and/or clinical expertise. The aim of this study, therefore, was to explore the utility of a multiple antigen (HRP–2/pLDH) rapid diagnostic test (RDT) as a low–cost, surrogate marker of patients at high risk for complications of severe malaria. We reviewed programmatic data at a peripheral health center in Western Uganda. Available demographic and clinical data on all individuals presenting to the center who underwent an RDT for suspected malaria infection were reviewed. We fit logistic regression models to identify correlates of two outcomes of interest: 1) severe malaria–related anemia, defined here as hemoglobin ≤7g/dL and 2) receipt of parenteral quinine. 1509 patients underwent malaria testing with an SD FK60 RDT during the observation period. A total of 637 (42%) RDTs were positive for at least one species of malaria, of which 326 (51%) exhibited a single HRP–2 band and 307 (48%) exhibited both HRP–2 and pLDH bands, while 4 exhibited only a single pLDH band. There was a trend towards more severe anemia in patients with a HRP–2/pLDH positive RDT compared to a HRP–2 only RDT (β = –0.99 g/dl, 95% CI –1.99 to 0.02, P = 0.055). A HRP–2/pLDH positive RDT was associated with an increased risk of severe malaria–related anemia compared to a negative RDT (adjusted odds ratio (AOR) 18.8, 95% CI 4.32 to 82.0, P < 0.001) and to a HRP–2 only RDT (AOR 2.46, 95% CI 0.75 to 8.04, P = 0.14). There was no significant association between RDT result and the administration of parenteral quinine. These results offer preliminary evidence that specific patterns of antigen positivity on RDTs could be utilized to identify patients at an increased risk for complications of severe malaria. PMID:26207181

  9. Exporting superconductivity across the gap: Proximity effect for semiconductor valence-band states due to contact with a simple-metal superconductor

    NASA Astrophysics Data System (ADS)

    Moghaddam, A. G.; Kernreiter, T.; Governale, M.; Zülicke, U.

    2014-05-01

    The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nanostructured semiconductors with bulk superconductors is of interest because these systems can host unconventional electronic excitations such as Majorana fermions when the semiconductor's charge carriers are subject to a large spin-orbit coupling. The latter requirement generally favors the use of hole-doped semiconductors. On the other hand, basic symmetry considerations imply that states from typical simple-metal superconductors will predominantly couple to a semiconductor's conduction-band states and, therefore, in the first instance generate a proximity effect for band electrons rather than holes. In this article, we show how the superconducting correlations in the conduction band are transferred also to hole states in the valence band by virtue of interband coupling. A general theory of the superconducting proximity effect for bulk and low-dimensional hole systems is presented. The interplay of interband coupling and quantum confinement is found to result in unusual wave-vector dependencies of the induced superconducting gap parameters. One particularly appealing consequence is the density tunability of the proximity effect in hole quantum wells and nanowires, which creates new possibilities for manipulating the transition to nontrivial topological phases in these systems.

  10. Electronic Structure and Phase Transition in Ferroelectic Sn2P2S6 Crystal

    PubMed Central

    Glukhov, Konstantin; Fedyo, Kristina; Banys, Juras; Vysochanskii, Yulian

    2012-01-01

    An analysis of the P2S6 cluster electronic structure and its comparison with the crystal valence band in the paraelectric and ferroelectric phases has been done by first-principles calculations for Sn2P2S6 ferroelectrics. The origin of ferroelectricity has been outlined. It was established that the spontaneous polarization follows from the stereochemical activity of the electron lone pair of tin cations, which is determined by hybridization with P2S6 molecular orbitals. The chemical bonds covalence increase and rearrangement are related to the valence band changes at transition from the paraelectric phase to the ferroelectric phase. PMID:23203069

  11. Symmetry properties of n-doped (Cd,Mn)Te quantum well photoluminescence spectra: An exemplary evidence for anisotropy-induced valence-band mixing

    NASA Astrophysics Data System (ADS)

    Koudinov, A. V.; Kehl, C.; Astakhov, G.; Geurts, J.; Wojtowicz, T.; Karczewski, G.

    2016-05-01

    The symmetry properties of photoluminescence spectra of an n-doped (001)-Cd0.99Mn0.01Te quantum well provide a simple and intuitive demonstration of the valence-band mixing induced by spontaneous in-plane anisotropy of the sample. The spectra were taken with linear-polarization resolution in an in-plane external magnetic field. They consisted of several features which are characteristic for a two-dimensional electron gas. Because the quantum well layer contained "magnetic" ions of Mn, the spectra showed pronounced polarization-dependent modifications induced by the magnetic field. With the field applied, a 90° rotation of the sample about the surface normal axis resulted in a clearly different spectrum, meaning that the nominally equivalent [110 ] and [1 1 ¯ 0 ] in-plane directions in the sample are not equivalent in fact. But, remarkably, the additional 90° rotations of both the polarizer and the analyzer restored the initial spectrum. This combined invariance regarding simultaneous 90° rotation of the sample and reversal of the polarization configuration was known earlier for spin-flip Raman spectra only. Our present observations are interpreted in terms of an intermixing of valence subbands leading to a pseudoisotropic g-factor of the ground-state holes.

  12. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

    SciTech Connect

    Liebhaber, M.; Mews, M.; Schulze, T. F.; Korte, L. Rech, B.; Lips, K.

    2015-01-19

    The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.

  13. Core-Level And Valence-Band Study Using Angle-Integrated Photoemission on LaFeAsO(0.9)F(0.1)

    SciTech Connect

    Garcia, D.R.; Jozwiak, C.; Hwang, C.G.; Fedorov, A.; Hanrahan, S.M.; Wilson, S.D.; Rotundu, C.R.; Freelon, B.K.; Birgeneau, R.J.; Bourret-Courchesne, E.; Lanzara, A.

    2009-05-18

    Using angle-integrated photoemission spectroscopy we have probed the novel LaFeAsO{sub 0.9}F{sub 0.1} superconductor over a wide range of photon energies and temperatures. We have provided a full characterization of the orbital character of the valence-band (VB) density of states (DOS) and of the magnitude of the d-p hybridization energy. Finally, we have identified two characteristic temperatures: 90 K where a pseudogap-like feature appears to close and 120 K where a sudden change in the DOS near E{sub F} occurs. We associate these phenomena with the spin density wave magnetic ordering and the structural transition seen in the parent compound, respectively. These results suggest the important role of electron correlation, spin physics, and structural distortion in the physics of Fe-based superconductors.

  14. On the combined use of GW approximation and cumulant expansion in the calculations of quasiparticle spectra: The paradigm of Si valence bands

    NASA Astrophysics Data System (ADS)

    Gumhalter, Branko; Kovač, Vjekoslav; Caruso, Fabio; Lambert, Henry; Giustino, Feliciano

    2016-07-01

    Since the earliest implementations of the various GW approximations and cumulant expansion in the calculations of quasiparticle propagators and spectra, several attempts have been made to combine the advantageous properties and results of these two theoretical approaches. While the GW-plus-cumulant approach has proven successful in interpreting photoemission spectroscopy data in solids, the formal connection between the two methods has not been investigated in detail. By introducing a general bijective integral representation of the cumulants, we can rigorously identify at which point these two approximations can be connected for the paradigmatic model of quasiparticle interaction with the dielectric response of the system that has been extensively exploited in recent interpretations of the satellite structures in photoelectron spectra. We establish a protocol for consistent practical implementation of the thus established GW +cumulant scheme and illustrate it by comprehensive state-of-the-art first-principles calculations of intrinsic angle-resolved photoemission spectra from Si valence bands.

  15. Impact of cation-based localized electronic states on the conduction and valence band structure of Al{sub 1−x}In{sub x}N alloys

    SciTech Connect

    Schulz, S.; Caro, M. A.; O'Reilly, E. P.

    2014-04-28

    We demonstrate that cation-related localized states strongly perturb the band structure of Al{sub 1−x}In{sub x}N leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in Al{sub 1−x}In{sub x}N for low In composition, x, and that these localized states dominate the evolution of the band structure with increasing x. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in Al{sub 1−x}In{sub x}N.

  16. Measurement of valence-band offset at native oxide/BaSi2 interfaces by hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Takabe, Ryota; Du, Weijie; Ito, Keita; Takeuchi, Hiroki; Toko, Kaoru; Ueda, Shigenori; Kimura, Akio; Suemasu, Takashi

    2016-01-01

    Undoped n-type BaSi2 films were grown on Si(111) by molecular beam epitaxy, and the valence band (VB) offset at the interface between the BaSi2 and its native oxide was measured by hard x-ray photoelectron spectroscopy (HAXPES) at room temperature. HAXPES enabled us to investigate the electronic states of the buried BaSi2 layer non-destructively thanks to its large analysis depth. We performed the depth-analysis by varying the take-off angle (TOA) of photoelectrons as 15°, 30°, and 90° with respect to the sample surface and succeeded to obtain the VB spectra of the BaSi2 and the native oxide separately. The VB maximum was located at -1.0 eV from the Fermi energy for the BaSi2 and -4.9 eV for the native oxide. We found that the band bending did not occur near the native oxide/BaSi2 interface. This result was clarified by the fact that the core-level emission peaks did not shift regardless of TOA (i.e., analysis depth). Thus, the barrier height of the native oxide for the minority-carriers in the undoped n-BaSi2 (holes) was determined to be 3.9 eV. No band bending in the BaSi2 close to the interface also suggests that the large minority-carrier lifetime in undoped n-BaSi2 films capped with native oxide is attributed not to the band bending in the BaSi2, which pushes away photogenerated minority carriers from the defective surface region, but to the decrease of defective states by the native oxide.

  17. Evaluation of valence band top and electron affinity of SiO2 and Si-based semiconductors using X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Fujimura, Nobuyuki; Ohta, Akio; Makihara, Katsunori; Miyazaki, Seiichi

    2016-08-01

    An evaluation method for the energy level of the valence band (VB) top from the vacuum level (VL) for metals, dielectrics, and semiconductors from the results of X-ray photoelectron spectroscopy (XPS) is presented for the accurate determination of the energy band diagram for materials of interest. In this method, the VB top can be determined by the energy difference between the onset of VB signals and the cut-off energy for secondary photoelectrons by considering the X-ray excitation energy (hν). The energy level of the VB top for three kinds of Si-based materials (H-terminated Si, wet-cleaned 4H-SiC, and thermally grown SiO2) has been investigated by XPS under monochromatized Al Kα radiation (hν = 1486.6 eV). We have also demonstrated the determination of the electron affinity for the samples by this measurement technique in combination with the measured and reported energy bandgaps (E g).

  18. Degeneracy and effective mass in the valence band of two-dimensional (100)-GaAs quantum well systems

    NASA Astrophysics Data System (ADS)

    Tarquini, Vinicio; Knighton, Talbot; Wu, Zhe; Huang, Jian; Pfeiffer, Loren; West, Ken

    2014-03-01

    Quantum Hall measurement of two-dimensional high-mobility [μ ˜2×106 cm2/(V.s)] hole systems confined in a 20 nm wide (100)-GaAs quantum well have been performed for charge densities between 4 and 5 × 1010 cm-2 in a temperature range of 10-160 mK. The Fourier analysis of the Shubnikov-de Haas (SdH) oscillations of the magnetoresistance vs. the inverse of the magnetic field 1/B reveals a single peak, indicating a degenerate heavy hole (HH) band. The hole density p =(e/h).f agrees with the Hall measurement result within 3%. The HH band degeneracy is understood through the diminishing spin-orbit interaction due to the low charge density and the nearly symmetric confinement. SdH oscillations fitted for 0.08 T ≤ B ≤ 0.24 T to the Dingle parameters yield an effective mass between 0.30 and 0.50 me in good agreement with previous cyclotron resonance results.

  19. Degeneracy and effective mass in the valence band of two-dimensional (100)-GaAs quantum well systems

    SciTech Connect

    Tarquini, Vinicio Knighton, Talbot; Wu, Zhe; Huang, Jian; Pfeiffer, Loren; West, Ken

    2014-03-03

    Quantum Hall measurement of two-dimensional high-mobility [μ∼2×10{sup 6} cm{sup 2}/(V·s)] hole systems confined in a 20 nm wide (100)-GaAs quantum well have been performed for charge densities between 4 and 5 × 10{sup 10} cm{sup −2} in a temperature range of 10–160 mK. The Fourier analysis of the Shubnikov-de Haas (SdH) oscillations of the magnetoresistance vs. the inverse of the magnetic field 1/B reveals a single peak, indicating a degenerate heavy hole (HH) band. The hole density p=(e/h)·f agrees with the Hall measurement result within 3%. The HH band degeneracy is understood through the diminishing spin-orbit interaction due to the low charge density and the nearly symmetric confinement. SdH oscillations fitted for 0.08 T ≤ B ≤ 0.24 T to the Dingle parameters yield an effective mass between 0.30 and 0.50 m{sub e} in good agreement with previous cyclotron resonance results.

  20. Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

    SciTech Connect

    Lao, Yan-Feng; Wolde, Seyoum; Unil Perera, A. G.; Zhang, Y. H.; Wang, T. M.; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S. S.

    2014-04-28

    The n-type quantum dot (QD) and dots-in-well (DWELL) infrared photodetectors, in general, display bias-dependent multiple-band response as a result of optical transitions between different quantum levels. Here, we present a unique characteristic of the p-type hole response, a well-preserved spectral profile, due to the much reduced tunneling probability of holes compared to electrons. This feature remains in a DWELL detector, with the dominant transition contributing to the response occurring between the QD ground state and the quantum-well states. The bias-independent response will benefit applications where single-color detection is desired and also allows achieving optimum performance by optimizing the bias.

  1. Valence Band Character of NiS2-xSex using 3p-3d Resonant ARPES

    NASA Astrophysics Data System (ADS)

    Han, Garam; Kim, Yeongkwan; Koh, Yoonyoung; Kim, Beomyoung; Song, Dongjoon; Seo, Jungjin; Kyung, Wonshik; Lee, Kyungdong; Kim, Changyoung

    2013-03-01

    Understanding the strong correlated system is one of the most challenging tasks in condensed matter physics. Especially, the metal insulator transition (MIT) has been one of the major topics recent few decades. NiS2-xSex is known as one of famous material which has MIT. The cubic pyrite NiS2 is a charge-transfer (CT) insulator. NiS2 attracts particular interest as it easily forms a solid solution with NiSe2 (NiS2-xSex) which, while being isoelectronic and isostructural to NiS2, is nevertheless a good metal. MIT, induced by Se alloying, is observed at low temperature (T) for x =0.45. Perucchi and his collaborators revealed closed relation between MIT and band width through comparison of infrared spectroscopy result and LDA calculation. However, it was only an indirect observation, and is inconsistent with recent proposal that NiS2 is not a CT insulator but an insulator due to the bonding-antibonding splitting in the S - S (Se - Se) dimers. To reveal the true mechanism in the MIT in NiS2-xSex, resonant photoemission experiment is essential. According to competing theories (CT insulator and insulator due to bonding-antibonding splitting), it is expected that the character of the main band that is responsible for the MIT should be different. Therefore, we performed 3p->3d resonant ARPES for various Se dopings (x =0.43; insulator, x =0.5, 0.7, 2.0; metal) and observed a significant change between on- and off-resonances near the MIT. Our experimental result supports that the origin of MIT in NiS2-xSex is the CT theory rather than the dimer theory.

  2. Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

    SciTech Connect

    King, Sean W.; Nemanich, Robert J.; Davis, Robert F.

    2014-08-25

    In order to understand and predict the behavior of future scandium nitride (ScN) semiconductor heterostructure devices, we have utilized in situ x-ray and ultra-violet photoelectron spectroscopy to determine the valence band offset (VBO) present at ScN/3C-SiC (111) and 2H-GaN (0001)/ScN (111) interfaces formed by ammonia gas source molecular beam epitaxy. The ScN/3C-SiC (111) VBO was dependent on the ScN growth temperature and resistivity. VBOs of 0.4 ± 0.1 and 0.1 ± 0.1 eV were, respectively, determined for ScN grown at 925 °C (low resistivity) and 800 °C (high resistivity). Using the band-gaps of 1.6 ± 0.2 and 1.4 ± 0.2 eV previously determined by reflection electron energy loss spectroscopy for the 925 and 800 °C ScN films, the respective conduction band offsets (CBO) for these interfaces were 0.4 ± 0.2 and 0.9 ± 0.2 eV. For a GaN (0001) interface with 925 °C ScN (111), the VBO and CBO were similarly determined to be 0.9 ± 0.1 and 0.9 ± 0.2 eV, respectively.

  3. Degeneracy and Effective Mass in the Valence Band of Two-Dimensional (100)-GaAs Quantum Well Systems

    NASA Astrophysics Data System (ADS)

    Tarquini, Vinicio; Knighton, Talbot; Wu, Zhe; Huang, Jian; Pfeifer, Loren; West, Ken

    2014-03-01

    Quantum Hall measurement of two-dimensional high-mobility (μ ~ 2 × 106 cm2/(V .s)) hole systems confined in a 20 nm wide (100)-GaAs quantum well have been performed for charge densities between 4 - 5 × 1010 cm-2 in a temperature range of 10-160 mK. The Fourier analysis of the Shubnikov-de Haas (SdH) oscillations of the magnetoresistance vs. the inverse of the magnetic field 1 /B⊥ reveals a single peak, indicating a degenerate heavy hole (HH) band. The corresponding hole density p =(e / h) . f agrees with the Hall measurement result within 3 % . The HH degeneracy is understood through the diminishing Rashba spin-orbit interaction due to the low charge density and the nearly symmetric confinement. SdH oscillations fitted for 0.1 T <=B⊥ <= 0 . 25 T to the Dingle parameters yield an effective mass (m*) between 0.39 me and 0.51 me that increases moderately with increasing magnetic field and charge density, in very good agreement with previous cyclotron resonance measurements. NSF DMR-1105183

  4. Valence band study of Sm0.1Ca0.9 - xSrxMnO3 using high resolution photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Dalai, Manas Kumar; Sekhar, Biju Raja; Biswas, Deepnarayan; Thakur, Sangeeta; Maiti, Kalobaran; Chiang, Tai-Chang; Martin, Christine

    2014-03-01

    We have studied the valence band electronic structure of Sm0.1Ca0.9- xSrxMnO3 (x = 0, 0.1, 0.3 and 0.6) at various temperatures using high resolution photoemission spectroscopy (HRPES). The data were taken using a Scienta R4000 energy analyser and the resolution was set at 5 meV. The doping dependent studies of Sm0.1Ca0.9-x SrxMnO3 at 50 K, 100 K and 295 K are quite interesting. The density of eg states near the Fermi level decreases with Sr substitution at the Ca site at 50 K. Also the similar trend has been observed at 100 K. At 295 K the changes in the eg states is quite different than the earlier temperatures where the intensity remains the same for x = 0, 0.1 and 0.3 and then decreases for x = 0.6. These changes in the density of states near the Fermi level will be explained by taking into account the structural, electrical and magnetic properties associated with this system. Permanent affiliation of Manas Kumar Dalai ; CSIR-National Physical Laboratory, New Delhi-110012, India. MKD acknowledges the Indo-US Science and Technology Forum (IUSSTF) for the fellowship.

  5. Valence band offset at Al{sub 2}O{sub 3}/In{sub 0.17}Al{sub 0.83}N interface formed by atomic layer deposition

    SciTech Connect

    Akazawa, M.; Nakano, T.

    2012-09-17

    The valence band offset, {Delta}E{sub V}, at an Al{sub 2}O{sub 3}/In{sub 0.17}Al{sub 0.83}N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, {Delta}E{sub CL}, between O 1s and In 4d resulted in {Delta}E{sub V} = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, {theta}. However, {Delta}E{sub CL} and full width at half maximum of core-level spectra were dependent on {theta}, which indicated significant potential gradients in Al{sub 2}O{sub 3} and InAlN layers. An actual {Delta}E{sub V} of 1.2 eV was obtained considering the potential gradients.

  6. Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

    SciTech Connect

    King, Sean W. Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus; French, Benjamin

    2014-09-21

    In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

  7. Structural stability, electronic, mechanical and thermodynamical properties of CaNi2P2 and CaNi2Sb2 compounds by band structure calculation

    NASA Astrophysics Data System (ADS)

    Harish, R. Sugan; Jayalakshmi, D. S.; Viswanathan, E.; Sundareswari, M.

    2016-05-01

    The mechanical, electronic, thermodynamic properties and structural stability of tetragonal structured CaNi2P2 and CaNi2Sb2 intermetallic compounds has been studied using the FP-LAPW method based on density functional theory. The PBE-GGA exchange correlation has been applied. Using the computed elastic constants, various elastic moduli such as bulk, shear, Young’s modulus, Poisson’s ratio and anisotropy constant are calculated and discussed. Stability of the compounds is confirmed by using their elastic constants. Pugh’s ratio is calculated to analyze the mechanical nature of the compound.

  8. Experimental study of the valence band of Bi2Se3

    SciTech Connect

    Gao, Yi-Bin; He, Bin; Parker, David; Androulakis, Ioannis; Heremans, Joseph P.

    2014-09-26

    The valence band of Bi2Se3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

  9. Resolving CuO chain and CuO2 plane contributions to the YBa2Cu3O7 -δ valence band by standing-wave excited hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Thiess, S.; Lee, T.-L.; Aruta, C.; Lin, C. T.; Venturini, F.; Brookes, N. B.; Cowie, B. C. C.; Zegenhagen, J.

    2015-08-01

    We analyzed the valence band (VB) of the 90 K high-temperature superconductor YBa2Cu3O7 -δ by photoelectron spectroscopy under standing-wave excitation employing hard x rays. Precisely positioning the standing-wave intensity in the unit cell allows selectively probing the VB yield from the CuO chains and CuO2 planes, respectively. Both contribute strongly over the whole VB but the spectral weight of the planes is significantly higher than the chains within about 2 eV from the Fermi level. In the x-ray regime, the major contribution to the VB emission is coming from Cu 3 d .

  10. The observation of valence band change on resistive switching of epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} film using removable liquid electrode

    SciTech Connect

    Lee, Hong-Sub; Park, Hyung-Ho

    2015-12-07

    The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO{sub 3} (100) single crystal as the substrate to observe changes in the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.

  11. Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

    NASA Technical Reports Server (NTRS)

    Grunthaner, P. J.; Grunthaner, F. J.; Madhukar, A.

    1982-01-01

    Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

  12. Levels of Valence

    PubMed Central

    Shuman, Vera; Sander, David; Scherer, Klaus R.

    2013-01-01

    The distinction between the positive and the negative is fundamental in our emotional life. In appraisal theories, in particular in the component process model of emotion (Scherer, 1984, 2010), qualitatively different types of valence are proposed based on appraisals of (un)pleasantness, goal obstructiveness/conduciveness, low or high power, self-(in)congruence, and moral badness/goodness. This multifaceted conceptualization of valence is highly compatible with the frequent observation of mixed feelings in real life. However, it seems to contradict the one-dimensional conceptualization of valence often encountered in psychological theories, and the notion of valence as a common currency used to explain choice behavior. Here, we propose a framework to integrate the seemingly disparate conceptualizations of multifaceted valence and one-dimensional valence by suggesting that valence should be conceived at different levels, micro and macro. Micro-valences correspond to qualitatively different types of evaluations, potentially resulting in mixed feelings, whereas one-dimensional macro-valence corresponds to an integrative “common currency” to compare alternatives for choices. We propose that conceptualizing levels of valence may focus research attention on the mechanisms that relate valence at one level (micro) to valence at another level (macro), leading to new hypotheses, and addressing various concerns that have been raised about the valence concept, such as the valence-emotion relation. PMID:23717292

  13. Structural, elastic, electronic and optical properties of new layered semiconductor BaGa2P2

    NASA Astrophysics Data System (ADS)

    Bouhemadou, A.; Khenata, R.; Bin-Omran, S.; Murtaza, G.; Al-Douri, Y.

    2015-08-01

    We report the results of a detailed first-principles based density functional theory study of the structural, elastic, electronic and optical properties of a recently synthesized layered semiconductor BaGa2P2. The optimized structural parameters are in excellent agreement with the experimental structural findings, which validates the used theoretical method. The single crystal and polycrystalline elastic constants are numerically estimated using the strain-stress method and Voigt-Reuss-Hill approximations. Predicted values of the elastic constants suggest that the considered material is mechanically stable, brittle and very soft material. The three-dimensional surface and its planar projections of Young's modulus are visualized to illustrate the elastic anisotropy. It is found that Young's modulus of BaGa2P2 show strong dependence on the crystallographic directions. Band structure calculation reveals that BaGa2P2 is a direct energy band gap semiconductor. The effective masses of electrons and holes at the minimum of the conduction band and maximum of the valence band are numerically estimated. The density of state, charge density distribution and charge transfers are calculated and analyzed to determine the chemical bonding nature. Dielectric function, refractive index, extinction coefficient, absorption coefficient, reflectivity and electron-loss energy function spectra are computed for a wide photon energy range up to 20 eV. Calculated optical spectra exhibit a noticeable anisotropy.

  14. Polar solvent structural parameters from protonation equilibria of aliphatic and alicyclic diamines and from absorption bands of mixed-valence transition-metal complexes

    NASA Astrophysics Data System (ADS)

    Kornyshev, A. A.; Ulstrup, J.

    1986-04-01

    We have applied non-local electrostatic theory in combination with a simple solute model to obtain solvent structural properties in terms of the short-range dielectric constant, ˜ge, and the correlation length for the solvent polarization fluctuations, A. These parameters are fitted to experimental data for the free energy of interaction between protonated amino groups in dibasic amines and for intervalence band maxima of binuclear ruthenium complexes with bridge groups of varying length. The results show that non-local screening in the outer solvent, ˜ge in the range 3.5-4 for water, and A ≈ 2-3 Å and 4 Å for acetonitrile and water, respectively, provide good fits to the data, implying the significance of solvent structural effects for these phenomena.

  15. Hole-ion Mixed Conduction of Orientation-Controlled BaPrO3-δ Thin Film with Mixed Valence States

    NASA Astrophysics Data System (ADS)

    Higuchi, Tohru; Oda, Asuka; Tsuchiya, Takashi; Suetsugu, Takaaki; Suzuki, Naoya; Yamaguchi, Shohei; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi

    2015-11-01

    An in-plane-oriented BaPrO3-δ thin film with mixed valence states has been prepared on an Al2O3(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (Tsub), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above Tsub = 800 °C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 °C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr4+ (4f0) and Pr3+ (4f1L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 °C.

  16. Valence bond entanglement entropy.

    PubMed

    Alet, Fabien; Capponi, Sylvain; Laflorencie, Nicolas; Mambrini, Matthieu

    2007-09-14

    We introduce for SU(2) quantum spin systems the valence bond entanglement entropy as a counting of valence bond spin singlets shared by two subsystems. For a large class of antiferromagnetic systems, it can be calculated in all dimensions with quantum Monte Carlo simulations in the valence bond basis. We show numerically that this quantity displays all features of the von Neumann entanglement entropy for several one-dimensional systems. For two-dimensional Heisenberg models, we find a strict area law for a valence bond solid state and multiplicative logarithmic corrections for the Néel phase. PMID:17930468

  17. Mixed Valence Niobium

    NASA Astrophysics Data System (ADS)

    Keating, Steven James

    1992-01-01

    The structural, crystal-chemical, and electrical properties of perovskites are reviewed, with respect to metallic phases similar to tungsten bronze. Phase diagrams are presented for the SrO-NbO-NbO_{2.5 } and SrNbO_3-KNbO _3-rm Sr_{0.5}NbO _3 ternaries, and for the SrNbO_3 -rm Sr_{0.5}NbO_3 binary. The influence of oxygen partial pressure, temperature, melting, and solid solutions affecting the perovskite phase rm Sr_{x}NbO _3 (0.75 <= x < 1.0) are detailed. The phase rm Sr_5Nb_4O_{15-y} (0.0 <= y <= 1.04) is discussed and XRD data are presented. The effects of A-cation substitutions in the rm A_{x}NbO_3 (A = K^+, Ba^{2+ }, Sr^{2+}, La^{3+}, Gd^ {3+}, Y^{3+} ) perovskite have been investigated. Large ions such as K^+ and Ba^ {2+} cause x to approach unity, whereas smaller ions such as Sr^{2+} and La^{3+} increase the ability of the A-site to accommodate vacancies (i.e. x < 1). Ba^{2+} results in an increase in the lattice parameter of the perovskite, whereas K^+ (which requires oxidation of Nb^{4+} to Nb^{5+}) results in a lattice parameter decrease, even though it has an ionic radius similar to Ba^{2+} . A unique relationship between unit cell volume and valence is established, suggesting that the oxidation state of the NbO_6 network dictates the lattice parameters and stability of the perovskite. The resistivity variation for rm Sr_{x}NbO_3, (Ba,Sr)NbO _3, (K,Sr)NbO_3, and (rm K_{0.5}Sr_ {0.5})NbO_3 indicates metallic behavior between 298K and 77K. Resistivity increased as the Nb was oxidized from Nb^{4+} to Nb^{5+}, but metallic properties persisted to at least Nb^ {5+}/(Nb^{5+} + Nb^{4+}) = 0.5. The influence of the exchanges Sr^{2+} = Ba^{2+} and V_{rm A} + Sr ^{2+} = 2K^+ on the electrical resistivity of the perovskite suggests ordering or band structure effects which are orders of magnitude stronger than those observed in metal alloys. Magnetic susceptibility measurements indicate Pauli-paramagnetism. At low temperature (<15K), the paramagnetic

  18. Energy Correlation among Three Photoelectrons Emitted in Core-Valence-Valence Triple Photoionization of Ne

    SciTech Connect

    Hikosaka, Y.; Soejima, K.; Lablanquie, P.; Penent, F.; Palaudoux, J.; Andric, L.; Shigemasa, E.; Suzuki, I. H.; Nakano, M.; Ito, K.

    2011-09-09

    The direct observation of triple photoionization involving one inner shell and two valence electrons is reported. The energy distribution of the three photoelectrons emitted from Ne is obtained using a very efficient multielectron coincidence method using the magnetic bottle electron spectroscopic technique. A predominance of the direct path to triple photoionization for the formation of Ne{sup 3+} in the 1s2s{sup 2}2p{sup 4} configuration is observed. It is demonstrated that the energy distribution evolves with photon energy and indicates a significant difference with triple photoionization involving only valence electrons.

  19. Energy correlation among three photoelectrons emitted in core-valence-valence triple photoionization of Ne.

    PubMed

    Hikosaka, Y; Lablanquie, P; Penent, F; Palaudoux, J; Andric, L; Soejima, K; Shigemasa, E; Suzuki, I H; Nakano, M; Ito, K

    2011-09-01

    The direct observation of triple photoionization involving one inner shell and two valence electrons is reported. The energy distribution of the three photoelectrons emitted from Ne is obtained using a very efficient multielectron coincidence method using the magnetic bottle electron spectroscopic technique. A predominance of the direct path to triple photoionization for the formation of Ne3+ in the 1s 2s2 2p4 configuration is observed. It is demonstrated that the energy distribution evolves with photon energy and indicates a significant difference with triple photoionization involving only valence electrons. PMID:22026663

  20. Gas-to-cluster effects in S 2p-excited SF{sub 6}

    SciTech Connect

    Flesch, Roman; Serdaroglu, Ertugrul; Ruehl, Eckart; Brykalova, Xenia O.; Kan, Elena I.; Klyushina, Ekaterina S.; Krivosenko, Yuri S.; Pavlychev, Andrey A.

    2013-04-14

    High resolution X-ray spectroscopic studies on free SF{sub 6} molecules and SF{sub 6} clusters near the S 2p ionization thresholds are reported. Spectral changes occurring in clusters for the intense molecular-like S 2p{sub 1/2,3/2}{yields} 6a{sub 1g}-, 2t{sub 2g}-, and 4e{sub g}-resonances are examined in detail. Neither gas-to-cluster spectral shifts nor changes in peak shape are observed for the pre-edge 6a{sub 1g}-band. Significant changes in band shape and distinct gas-to-cluster shifts occur in the S 2p{sub 1/2,3/2}{yields} 2t{sub 2g}- and 4e{sub g}-transitions. These are found in the S 2p-ionization continua. The quasiatomic approach is used to assign the experimental results. It is shown that a convolution of asymmetric and symmetric contributions from Lorentzian and Gaussian line shapes allows us to model the spectral distribution of oscillator strength for the S 2p{sub 1/2,3/2}{yields} 2t{sub 2g}-, and 4e{sub g}-transitions. The asymmetry is due to trapping of the photoelectron within the finite size potential barrier. The Lorentzian contribution is found to be dominating in the line shape of the S 2p{yields} 2t{sub 2g}- and 4e{sub g}-bands. The spectroscopic parameters of the spin-orbit components of both the 2t{sub 2g}- and 4e{sub g}-bands are extracted and their gas-to-cluster changes are analyzed. The photoelectron trapping times in free and clustered SF{sub 6} molecules are determined. Specifically, it is shown that spectral changes in clusters reflected in core-to-valence-transitions are due to a superposition of the singly scattered photoelectron waves at the neighboring molecules with the primary and multiply scattered waves within the molecular cage.

  1. Micro-valences: perceiving affective valence in everyday objects.

    PubMed

    Lebrecht, Sophie; Bar, Moshe; Barrett, Lisa Feldman; Tarr, Michael J

    2012-01-01

    Perceiving the affective valence of objects influences how we think about and react to the world around us. Conversely, the speed and quality with which we visually recognize objects in a visual scene can vary dramatically depending on that scene's affective content. Although typical visual scenes contain mostly "everyday" objects, the affect perception in visual objects has been studied using somewhat atypical stimuli with strong affective valences (e.g., guns or roses). Here we explore whether affective valence must be strong or overt to exert an effect on our visual perception. We conclude that everyday objects carry subtle affective valences - "micro-valences" - which are intrinsic to their perceptual representation. PMID:22529828

  2. Band structure in 113Sn

    NASA Astrophysics Data System (ADS)

    Banerjee, P.; Ganguly, S.; Pradhan, M. K.; Sharma, H. P.; Muralithar, S.; Singh, R. P.; Bhowmik, R. K.

    2016-07-01

    The structure of collective bands in 113Sn, populated in the reaction 100Mo(19F,p 5 n ) at a beam energy of 105 MeV, has been studied. A new positive-parity sequence of eight states extending up to 7764.9 keV and spin (39 /2+) has been observed. The band is explained as arising from the coupling of the odd valence neutron in the g7 /2 or the d5 /2 orbital to the deformed 2p-2h proton configuration of the neighboring even-A Sn isotope. Lifetimes of six states up to an excitation energy of 9934.9 keV and spin 47 /2-belonging to a Δ I =2 intruder band have been measured for the first time, including an upper limit for the last state, from Doppler-shift-attenuation data. A moderate average quadrupole deformation β2=0.22 ±0.02 is deduced from these results for the five states up to spin 43 /2- . The transition quadrupole moments decrease with increase in rotational frequency, indicating a reduction of collectivity with spin, a feature common for terminating bands. The behavior of the kinematic and dynamic moments of inertia as a function of rotational frequency has been studied and total Routhian surface calculations have been performed in an attempt to obtain an insight into the nature of the states near termination.

  3. Gaining control over rare earth valence fluctuations

    SciTech Connect

    Wohlleben, D.

    1987-05-31

    This paper briefly deals with the problem of narrow band materials. It addresses a new theoretical approach to the fluctuation of valence electrons in rare earth elements. It is believed that the phenomena of interest arize from an instability of the partially filled d or f shell of certain atoms when they are put into a metallic host. The theoretical models which dominate the scene work with two local d or f states on one hand and a structureless sea of free conduction electrons on the other. This procedure ignores at least half of the essential physics; the other held is kept alive in the term valence fluctuation. Basically, what the prevalent models ignore is that, in all these systems, the entire atoms as the source of the anomalies are being dealt with, not just their f shells. In other words, there is important structure in the sea of conduction electrons.

  4. Optical Study of Archetypical Valence-Fluctuating Eu Systems

    NASA Astrophysics Data System (ADS)

    Guritanu, V.; Seiro, S.; Sichelschmidt, J.; Caroca-Canales, N.; Iizuka, T.; Kimura, S.; Geibel, C.; Steglich, F.

    2012-12-01

    We have investigated the optical conductivity of the prominent valence-fluctuating compounds EuIr2Si2 and EuNi2P2 in the infrared energy range to get new insights into the electronic properties of valence-fluctuating systems. For both compounds, we observe upon cooling the formation of a renormalized Drude response, a partial suppression of the optical conductivity below 100meV, and the appearance of a midinfrared peak at 0.15eV for EuIr2Si2 and 0.13 eV for EuNi2P2. Most remarkably, our results show a strong similarity with the optical spectra reported for many Ce- or Yb-based heavy-fermion metals and intermediate valence systems, although the phase diagrams and the temperature dependence of the valence differ strongly between Eu systems and Ce- or Yb-based systems. This suggests that the hybridization between 4f and conduction electrons, which is responsible for the properties of Ce and Yb systems, plays an important role in valence-fluctuating Eu systems.

  5. Structural evolution and valence electron-state change during ultra thin silicon-oxide growth

    NASA Astrophysics Data System (ADS)

    Shimizu, A.; Abe, S.; Nakayama, H.; Nishino, T.; Iida, S.

    2000-06-01

    We have studied valence electron-state changes of Si during initial oxidation of Si(111) clean surface, HF-treated Si(001) and Si(111) surfaces by Auger valence electron spectroscopy (AVES). The results showed that the valence electron-state changes during initial oxidation were sensitively reflected in Si[2s,2p,V] (V=3s,3p) AVES spectra and that they depended on both initial surface treatment and surface orientation. The local valence electron-states, local density of states in other words, showed the characteristic-structure evolution depending on the initial surface treatment and surface orientation.

  6. Fully opposite spin polarization of electron and hole bands in DyN and related band structures of GdN and HoN

    NASA Astrophysics Data System (ADS)

    Cheiwchanchamnangij, Tawinan; Lambrecht, Walter R. L.

    2015-07-01

    Using quasiparticle self-consistent G W calculations, we show that DyN has an unusual nearly zero indirect gap semimetallic band structure in which the states near the valence band maximum are fully minority spin polarized at Γ while the states near the conduction band minimum (at X ) have fully majority spin character. This arises due to a strong hybridization of one of the minority spin f states of dysprosium with the N-2 p bands. The reason why only one of the f bands hybridizes is explained using symmetry arguments. We show that in HoN, this hybridization is already strongly reduced because of the deeper Ho-4 f minority spin states.

  7. Racah materials: role of atomic multiplets in intermediate valence systems

    PubMed Central

    Shick, A. B.; Havela, L.; Lichtenstein, A. I.; Katsnelson, M. I.

    2015-01-01

    We address the long-standing mystery of the nonmagnetic insulating state of the intermediate valence compound SmB6. Within a combination of the local density approximation (LDA) and an exact diagonalization (ED) of an effective discrete Anderson impurity model, the intermediate valence ground state with the f-shell occupation 〈n4f〉 = 5.6 is found for the Sm atom in SmB6. This ground state is a singlet, and the first excited triplet state ~3 meV higher in the energy. SmB6 is a narrow band insulator already in LDA, with the direct band gap of ~10 meV. The electron correlations increase the band gap which now becomes indirect. Thus, the many-body effects are relevant to form the indirect band gap, crucial for the idea of “topological Kondo insulator" in SmB6. Also, an actinide analog PuB6 is considered, and the intermediate valence singlet ground state is found for the Pu atom. We propose that [Sm, Pu]B6 belong to a new class of the intermediate valence materials with the multi-orbital “Kondo-like" singlet ground-state. Crucial role of complex spin-orbital f  n–f  n+1 multiplet structure differently hybridized with ligand states in such Racah materials is discussed. PMID:26490021

  8. Micro-Valences: Perceiving Affective Valence in Everyday Objects

    PubMed Central

    Lebrecht, Sophie; Bar, Moshe; Barrett, Lisa Feldman; Tarr, Michael J.

    2012-01-01

    Perceiving the affective valence of objects influences how we think about and react to the world around us. Conversely, the speed and quality with which we visually recognize objects in a visual scene can vary dramatically depending on that scene’s affective content. Although typical visual scenes contain mostly “everyday” objects, the affect perception in visual objects has been studied using somewhat atypical stimuli with strong affective valences (e.g., guns or roses). Here we explore whether affective valence must be strong or overt to exert an effect on our visual perception. We conclude that everyday objects carry subtle affective valences – “micro-valences” – which are intrinsic to their perceptual representation. PMID:22529828

  9. Effect of valence subband dispersion on near-band-gap transitions in GaAs/AlxGa1-xAs quantum wells containing a two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Gabbay, A.; Preezant, Yulia; Cohen, E.; Ashkinadze, B. M.; Pfeiffer, L. N.

    2008-04-01

    The reflection (R) and photoluminescence (PL) spectra of several GaAs/AlxGa1-xAs modulation-doped quantum wells (MDQWs) were studied at T=2K . The n doping was either on one side of the quantun well (width of 25nm ) or symmetrically on both sides (width of 20nm ), and the resulting two-dimensional electron gas (2DEG) density was in the range of ne=(0.7-2.0)×1011cm-2 . The reflection spectra of the two-side MDQW’s show sharp but weak lines (ΔR<0.02) , which are attributed to e1-hh1 and e1-lh1 interband transitions at in-plane wave vectors k∥=kF . These spectra were analyzed by calculating the dispersion of the lowest conduction and top valence subbands and the contribution of the 2DEG interband transitions to the MDQW optical susceptibility. The reflection spectral shape was then calculated as a function of ne and of the layer widths. This model explains the observed differences between the intensity and line shape of the one-side and two-side MDQW’s. The PL spectral shape of all the MDQW’s shows a marked dependence on laser excitation intensity. It was calculated by using the e1 and hh1 dispersion curves and assuming that the interband transitions are k∥ conserving. The observed PL spectral dependence on laser excitation intensity was analyzed by assuming that the effective temperature of the photoexcited holes increases with excitation intensity in the range of Th=4-15K , while the 2DEG temperature remains unchanged and equal to that of the lattice.

  10. Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Ye, Gang; Wang, Hong; Ji, Rong

    2016-04-01

    The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔEV of 0.4 ± 0.2 eV at HfO2/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO2 and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO2 and AlN.

  11. Conduction-band electronic states of YbInCu{sub 4} studied by photoemission and soft x-ray absorption spectroscopies

    SciTech Connect

    Utsumi, Yuki; Kurihara, Hidenao; Maso, Hiroyuki; Tobimatsu, Komei; Sato, Hitoshi; Shimada, Kenya; Namatame, Hirofumi; Hiraoka, Koichi; Kojima, Kenichi; Ohkochi, Takuo; Fujimori, Shin-ichi; Takeda, Yukiharu; Saitoh, Yuji; Mimura, Kojiro; Ueda, Shigenori; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Kobayashi, Keisuke; Oguchi, Tamio; Taniguchi, Masaki

    2011-09-15

    We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu{sub 4} by means of temperature-dependent hard x-ray photoemission spectroscopy (HX-PES) of the Cu 2p{sub 3/2} and In 3d{sub 5/2} core states taken at h{nu}=5.95 keV, soft x-ray absorption spectroscopy (XAS) of the Cu 2p{sub 3/2} core absorption region around h{nu}{approx}935 eV, and soft x-ray photoemission spectroscopy (SX-PES) of the valence band at the Cu 2p{sub 3/2} absorption edge of h{nu}=933.0 eV. With decreasing temperature below the valence transition at T{sub V}=42 K, we have found that (1) the Cu 2p{sub 3/2} and In 3d{sub 5/2} peaks in the HX-PES spectra exhibit the energy shift toward the lower binding-energy side by {approx}40 and {approx}30 meV, respectively, (2) an energy position of the Cu 2p{sub 3/2} main absorption peak in the XAS spectrum is shifted toward higher photon-energy side by {approx}100 meV, with an appearance of a shoulder structure below the Cu 2p{sub 3/2} main absorption peak, and (3) an intensity of the Cu L{sub 3}VV Auger spectrum is abruptly enhanced. These experimental results suggest that the Fermi level of the CB-derived density of states is shifted toward the lower binding-energy side. We have described the valence transition in YbInCu{sub 4} in terms of the charge transfer from the CB to Yb 4f states.

  12. Attosecond photoionization dynamics with stimulated core-valence transitions

    NASA Astrophysics Data System (ADS)

    You, Jhih-An; Rohringer, Nina; Dahlström, Jan Marcus

    2016-03-01

    We investigate ionization of neon atoms by an isolated attosecond pump pulse in the presence of two coherent extreme ultraviolet or x-ray probe fields. The probe fields are tuned to a core-valence transition in the residual ion and induce spectral shearing of the photoelectron distributions. We show that the photoelectron-ion coincidence signal contains an interference pattern that depends on the temporal structure of the attosecond pump pulse and the stimulated core-valence transition. Many-body perturbation theory is used to compute "atomic response times" for the processes and we find strikingly different behavior for stimulation to the outer-core hole (2 p ↔2 s ) and stimulation to the inner-core hole (2 p ↔1 s ). The response time of the inner-core transition is found to be comparable to that of state-of-the-art laser-based characterization techniques for attosecond pulses.

  13. A Multidimensional Measure of Work Valences

    ERIC Educational Resources Information Center

    Porfeli, Erik J.; Lee, Bora; Weigold, Ingrid K.

    2012-01-01

    Work valence is derived from expectancy-valence theory and the literature on children's vocational development and is presumed to be a general appraisal of work that emerges during the childhood period. Work valence serves to promote and inhibit the motivation and tasks associated with vocational development. A measure of work valence, composed of…

  14. 2p2 Team News

    NASA Astrophysics Data System (ADS)

    Jones, H.

    2000-12-01

    In September we welcomed new team member Lisa Germany from Australia. Lisa is a new ESO Fellow and has interests in supernovae and their use in cosmological distance determinations. S e p t e m b e r, however, was also a month for departures when we said goodbye to long-time team member James Brewer. James was a pivotal member of the 2p2 Team since his arrival at ESO in 1996. He has returned to Canada to take up a position at the University of British Columbia, in Vancouver, Canada. We wish him all the best under northern skies.

  15. 2p2 Team News

    NASA Astrophysics Data System (ADS)

    Jones, H.

    2000-06-01

    The 2p2 Team continued towards the implementation at the 2.2-m of the same BOB (Broker for Observation Blocks) observing interface as seen at other ESO telescopes. This requires an interface to be written between the existing BOB software and the non-VLT compatible control software for the Wide-Field Imager (WFI) and 2.2-m. Cristian Urrutia, Tatiana Paz and Eduardo Robledo are heading its development. With this software in place, observers can use the VLT Phase 2 Proposal Preparation System (P2PP) for definition of their exposures, whether they are for Visitor or Service Mode.

  16. Energies and E1, M1, E2, M2 transition rates for states of the 2s{sup 2}2p, 2s2p{sup 2}, and 2p{sup 3} configurations in boron-like ions between N III and Zn XXVI

    SciTech Connect

    Rynkun, P.; Joensson, P.; Gaigalas, G.; Froese Fischer, C.

    2012-07-15

    Energies, E1, M1, E2, M2 transition rates, line strengths, oscillator strengths, and lifetimes from relativistic configuration interaction calculations are reported for the states of the (1s{sup 2})2s{sup 2}2p, 2s2p{sup 2}, and 2p{sup 3} configurations in all boron-like ions between N III and Zn XXVI. Valence, core-valence, and core-core correlation effects were accounted for through single-double multireference (SD-MR) expansions to increasing sets of active orbitals.

  17. Valence quark spin distribution functions

    SciTech Connect

    Nathan Isgur

    1998-09-01

    The hyperfine interactions of the constituent quark model provide a natural explanation for many nucleon properties, including the {Delta} - N splitting, the charge radius of the neutron, and the observation that the proton's quark distribution function ratio d(x)/u(x) {r_arrow} 0 as x {r_arrow} 1. The hyperfine-perturbed quark model also makes predictions for the nucleon spin-dependent distribution functions. Precision measurements of the resulting asymmetries A{sub 1}{sup p}(x) and A{sub 1}{sup n}(x) in the valence region can test this model and thereby the hypothesis that the valence quark spin distributions are ''normal''.

  18. Forming Beliefs: Why Valence Matters.

    PubMed

    Sharot, Tali; Garrett, Neil

    2016-01-01

    One of the most salient attributes of information is valence: whether a piece of news is good or bad. Contrary to classic learning theories, which implicitly assume beliefs are adjusted similarly regardless of valence, we review evidence suggesting that different rules and mechanisms underlie learning from desirable and undesirable information. For self-relevant beliefs this asymmetry generates a positive bias, with significant implications for individuals and society. We discuss the boundaries of this asymmetry, characterize the neural system supporting it, and describe how changes in this circuit are related to individual differences in behavior. PMID:26704856

  19. Band alignment at a MgO/GaSb heterointerface using x-ray photoelectron spectroscopy measurements

    NASA Astrophysics Data System (ADS)

    Li, Ruxue; Wei, Zhipeng; Liu, Xue; Li, Yongfeng; Fang, Xuan; Tang, Jilong; Fang, Dan; Gao, Xian; Wang, Dengkui; Hao, Yongqin; Yao, Bin; Ma, Xiaohui; Wang, Xiaohua

    2016-07-01

    The valence band offset (ΔE V) of a MgO/GaSb heterostructure was determined using x-ray photoelectron spectroscopy measurements. A ΔE V value of 2.84 ± 0.10 eV was calculated by using Ga 3d3/2 and Mg 2p1/2 binding energies as references. Taking the empirical band gaps of 7.83 eV and 0.73 eV for MgO and GaSb thin films into consideration, respectively, we obtained the type-I band alignment of a MgO/GaSb heterostructure with a conduction band offset (ΔE c) of 4.26 ± 0.10 eV, suggesting a nested interface band alignment.

  20. Study on the energy band structure and photoelectrochemical performances of spinel Li{sub 4}Ti{sub 5}O{sub 12}

    SciTech Connect

    Ge, Hao; Tian, Hui; Song, Hua; Liu, Daliang; Wu, Shuyao; Shi, Xicheng; Gao, Xiaoqiang; Lv, Li; Song, Xi-Ming

    2015-01-15

    Highlights: • Spinel Li{sub 4}Ti{sub 5}O{sub 12} possesses more positive potential of valence band and wider band gap than TiO{sub 2}. • Spinel Li{sub 4}Ti{sub 5}O{sub 12} displays typical n-type semiconductor characteristic and excellent UV-excitateded photocatalysis activity. • Our preliminary study will open new perspectives in investigation of other lithium-based compounds for new photocatalysts. - Abstract: Energy band structure, photoelectrochemical performances and photocatalysis activity of spinel Li{sub 4}Ti{sub 5}O{sub 12} are investigated for the first time in this paper. Li{sub 4}Ti{sub 5}O{sub 12} possesses more positive valence band potential and wider band gap than TiO{sub 2} due to its valence band consisting of Li{sub 1s} and Ti{sub 3d} orbitals mixed with O{sub 2p}. Li{sub 4}Ti{sub 5}O{sub 12} shows typical photocatalysis material characteristics and excellent photocatlytic activity under UV irradiation.

  1. Charge density waves and local states in quasi-one-dimensional mixed valence inorganic complexes

    NASA Astrophysics Data System (ADS)

    Conradson, S. D.; Stroud, M. A.; Zietlow, M. H.; Swanson, B. I.; Baeriswyl, D.; Bishop, A. R.

    1988-02-01

    The ground state structures and local states associated with chemical defects in quasi-one-dimensional halogen ( X) bridged transition metal ( M) mixed valence solids of MX and MMX type have been studied. An adiabatic Hartree-Fock theoretical framework is presented and representative members are classified. The MX materials provide a class whose strong electron-phonon coupling usually favors a charge-density-wave (CDW) ground state. However, the coupling strength can be chemically tuned (e.g., by extension to MMX systems) or altered by pressure, driving the ground state structures towards, e.g., a bond-order-wave (BOW) phase. Electron-phonon driven self-trapped states are expected in both the CDW or BOW regimes. Resonance Raman spectra of the MMX solid K 4[Pt 2(P 2O 5H 2) 4Cl]·H 2O show, in addition to the homogeneous ground state modes, sharp new features with excitation profiles shifted to the red of the intervalence-charge-transfer (IVCT) band. We attribute these new bands to a local polaron state formed by oxidation of the Pt 2Cl chain by a chemical defect. The observed spectral characteristics of this local state are in good agreement with theoretical predictions.

  2. Valence band of LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4} and its effects on the voltage profiles of LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4}/Li electrochemical cells

    SciTech Connect

    Gao, Y.; Myrtle, K.; Zhang, M. |; Reimers, J.N.; Dahn, J.R.

    1996-12-01

    A high-voltage plateau at 4.7 V in LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4}/Li electrochemical cells appears with the introduction of Ni into the LiMn{sub 2}O{sub 4} spinel. The capacity of the 4.7-V plateau increases linearly at the expense of the 4.1-V plateau as {ital x} increases. Using ultraviolet photoelectron spectroscopy, we have studied the top of the valence band of LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4} for a series of samples with 0.0{le}{ital x}{le}0.5. A component attributed to Ni 3{ital d} electrons was found at about 0.5-eV higher binding energy than the Mn 3{ital d} {ital e}{sub {ital g}} electrons. We propose that the increased voltage of the 4.7-V plateau is due to the increased energy required to remove electrons from Ni 3{ital d} levels compared to Mn 3{ital d} {ital e}{sub {ital g}} levels. {copyright} {ital 1996 The American Physical Society.}

  3. Relativistic CI calculations of spectroscopic data for the 2p6 and 2p53l configurations in Ne-like ions between Mg III and Kr XXVII

    NASA Astrophysics Data System (ADS)

    Jönsson, P.; Bengtsson, P.; Ekman, J.; Gustafsson, S.; Karlsson, L. B.; Gaigalas, G.; Froese Fischer, C.; Kato, D.; Murakami, I.; Sakaue, H. A.; Hara, H.; Watanabe, T.; Nakamura, N.; Yamamoto, N.

    2014-01-01

    Energies, E1, M1, E2, M2 transition rates, oscillator strengths, and lifetimes from relativistic configuration interaction calculations are reported for the states of the 2p6, 2p53s, 2p53p, and 2p53d, configurations in all Ne-like ions between Mg III and Kr XXVII. Core-valence and core-core correlation effects are accounted for through single and double excitations to increasing sets of active orbitals. The Breit interaction and leading quantum electrodynamic effects are included as perturbations. The results are compared with experiments and other recent benchmark calculations. In Mg III, Al IV, Si V, P VI, S VII, and Ar IX, for which experimental energies are known to high accuracy, the mean error in the calculated energies is only 0.011%.

  4. Valency configuration of transition metal impurities in ZnO

    SciTech Connect

    Petit, Leon; Schulthess, Thomas C; Svane, Axel; Temmerman, Walter M; Szotek, Zdzislawa; Janotti, Anderson

    2006-01-01

    We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM=Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn{sub 1-x}TM{sub x}O, the localized TM{sup 2+} configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy {epsilon}F close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with {epsilon}F close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.

  5. Monoclinic Tungsten Oxide with {100} Facet Orientation and Tuned Electronic Band Structure for Enhanced Photocatalytic Oxidations.

    PubMed

    Zhang, Ning; Chen, Chen; Mei, Zongwei; Liu, Xiaohe; Qu, Xiaolei; Li, Yunxiang; Li, Siqi; Qi, Weihong; Zhang, Yuanjian; Ye, Jinhua; Roy, Vellaisamy A L; Ma, Renzhi

    2016-04-27

    Exploring surface-exposed highly active crystal facets for photocatalytic oxidations is promising in utilizing monoclinic WO3 semiconductor. However, the previously reported highly active facets for monoclinic WO3 were mainly toward enhancing photocatalytic reductions. Here we report that the WO3 with {100} facet orientation and tuned surface electronic band structure can effectively enhance photocatalytic oxidation properties. The {100} faceted WO3 single crystals are synthesized via a facile hydrothermal method. The UV-visible diffuse reflectance, X-ray photoelectron spectroscopy valence band spectra, and photoelectrochemical measurements suggest that the {100} faceted WO3 has a much higher energy level of valence band maximum compared with the normal WO3 crystals without preferred orientation of the crystal face. The density functional theory calculations reveal that the shift of O 2p and W 5d states in {100} face induce a unique band structure. In comparison with the normal WO3, the {100} faceted WO3 exhibits an O2 evolution rate about 5.1 times in water splitting, and also shows an acetone evolution rate of 4.2 times as well as CO2 evolution rate of 3.8 times in gaseous degradation of 2-propanol. This study demonstrates an efficient crystal face engineering route to tune the surface electronic band structure for enhanced photocatalytic oxidations. PMID:27045790

  6. Aesthetic valence of visual illusions

    PubMed Central

    Stevanov, Jasmina; Marković, Slobodan; Kitaoka, Akiyoshi

    2012-01-01

    Visual illusions constitute an interesting perceptual phenomenon, but they also have an aesthetic and affective dimension. We hypothesized that the illusive nature itself causes the increased aesthetic and affective valence of illusions compared with their non-illusory counterparts. We created pairs of stimuli. One qualified as a standard visual illusion whereas the other one did not, although they were matched in as many perceptual dimensions as possible. The phenomenal quality of being an illusion had significant effects on “Aesthetic Experience” (fascinating, irresistible, exceptional, etc), “Evaluation” (pleasant, cheerful, clear, bright, etc), “Arousal” (interesting, imaginative, complex, diverse, etc), and “Regularity” (balanced, coherent, clear, realistic, etc). A subsequent multiple regression analysis suggested that Arousal was a better predictor of Aesthetic Experience than Evaluation. The findings of this study demonstrate that illusion is a phenomenal quality of the percept which has measurable aesthetic and affective valence. PMID:23145272

  7. THE VALENCE OF CORPUSCULAR PROTEINS.

    PubMed

    Gorin, M H; Mover, L S

    1942-07-20

    BY THE USE OF TWO EXTREME MODELS: a hydrated sphere and an unhydrated rod the valence (net charge) of corpuscular proteins can be successfully calculated from electric mobility data by the Debye-Hückel theory (modified to include the effect of the ions in the ion atmosphere) in conjunction with the electrophoretic theory of Henry. As pointed out by Abramson, this permits a comparison with values for the valence from titration data. Electrometric titration measurements of serum albumin B (Kekwick) have been determined at several ionic strengths. These results, together with the available data in the literature for serum albumin B, egg albumin, and beta-lactoglobulin have been used to compare values for the valence calculated from measurements of titration, electrophoresis, and membrane potentials. The results indicate that the usual interpretation of titration curves is open to serious question. By extrapolation of the titration data to zero ionic strength and protein concentration, there results an "intrinsic" net charge curve describing the binding of H(+) (OH(-)) ion alone. This curve agrees closely, in each case, with values of the valence calculated from mobility data (which in turn are in close accord with those estimated from membrane potential measurements). The experimental titration curves in the presence of appreciable quantities of ions and protein deviate widely from the ideal curve. It is suggested that, under these conditions, binding of undissociated acid (base) leads to erroneous values for the net charge. This binding would not affect the electrophoretic mobility. Values of the net charge obtained by the two extreme models from electrophoretic data are in agreement within 15 to 20 per cent. The agreement between the cylindrical model and the titration data is somewhat better in each case than with the sphere; i.e., this comparison enables a choice to be made between asymmetry and hydration in the interpretation of results from sedimentation and

  8. The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

    NASA Astrophysics Data System (ADS)

    Dolgos, Michelle R.; Paraskos, Alexandra M.; Stoltzfus, Matthew W.; Yarnell, Samantha C.; Woodward, Patrick M.

    2009-07-01

    The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba 3(VO 4) 2, Pb 3(VO 4) 2, YVO 4, BiVO 4, CeVO 4 and Ag 3VO 4 were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba 3(VO 4) 2 and YVO 4 have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb 3(VO 4) 2 and BiVO 4 the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6 s orbitals with nonbonding O 2 p states at the top of the valence band, and (b) overlap of empty 6 p orbitals with antibonding V 3 d-O 2 p states at the bottom of the conduction band. In Ag 3VO 4 mixing between filled Ag 4 d and O 2 p states destabilizes states at the top of the valence band leading to a large decrease in the band gap ( Eg=2.2 eV). In CeVO 4 excitations from partially filled 4 f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce 1-xBi xVO 4 (0≤ x≤0.5) and Ce 1-xY xVO 4 ( x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi 3+ or Y 3+ are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4 f orbitals.

  9. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

    PubMed Central

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K.; Venkatesan, T.; Ang, Kah-Wee

    2015-01-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec). PMID:26667402

  10. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

    NASA Astrophysics Data System (ADS)

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K.; Venkatesan, T.; Ang, Kah-Wee

    2015-12-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec).

  11. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier.

    PubMed

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K; Venkatesan, T; Ang, Kah-Wee

    2015-01-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec). PMID:26667402

  12. Theoretical and Experimental Study of the Crystal Structures, Lattice Vibrations, and Band Structures of Monazite-Type PbCrO4, PbSeO4, SrCrO4, and SrSeO4.

    PubMed

    Errandonea, Daniel; Muñoz, Alfonso; Rodríguez-Hernández, Placida; Proctor, John E; Sapiña, Fernando; Bettinelli, Marco

    2015-08-01

    The crystal structures, lattice vibrations, and electronic band structures of PbCrO4, PbSeO4, SrCrO4, and SrSeO4 were studied by ab initio calculations, Raman spectroscopy, X-ray diffraction, and optical-absorption measurements. Calculations properly describe the crystal structures of the four compounds, which are isomorphic to the monazite structure and were confirmed by X-ray diffraction. Information is also obtained on the Raman- and IR-active phonons, with all of the vibrational modes assigned. In addition, the band structures and electronic densities of states of the four compounds were determined. All are indirect-gap semiconductors. In particular, chromates are found to have band gaps smaller than 2.5 eV and selenates higher than 4.3 eV. In the chromates (selenates), the upper part of the valence band is dominated by O 2p states and the lower part of the conduction band is composed primarily of electronic states associated with the Cr 3d and O 2p (Se 4s and O 2p) states. Calculations also show that the band gap of PbCrO4 (PbSeO4) is smaller than the band gap of SrCrO4 (SrSeO4). This phenomenon is caused by Pb states, which, to some extent, also contribute to the top of the valence band and the bottom of the conduction band. The agreement between experiments and calculations is quite good; however, the band gaps are underestimated by calculations, with the exception of the bang gap of SrCrO4, for which theory and calculations agree. Calculations also provide predictions of the bulk modulus of the studied compounds. PMID:26161677

  13. Reentrant valence transition in EuO at high pressures : beyond the bond-valence model

    SciTech Connect

    Souza-Neto, N.M.; Zhao, J.; Alp, E.; Shen, G.; Sinogeikin, S. V.; Lapertot, G.; Haskel, D.

    2012-07-12

    The pressure-dependent relation between Eu valence and lattice structure in model compound EuO is studied with synchrotron-based x-ray spectroscopic and diffraction techniques. Contrary to expectation, a 7% volume collapse at {approx}45 GPa is accompanied by a reentrant Eu valence transition into a lower valence state. In addition to highlighting the need for probing both structure and electronic states directly when valence information is sought in mixed-valent systems, the results also show that widely used bond-valence methods fail to quantitatively describe the complex electronic valence behavior of EuO under pressure.

  14. Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques

    NASA Astrophysics Data System (ADS)

    Limaye, Mukta V.; Chen, S. C.; Lee, C. Y.; Chen, L. Y.; Singh, Shashi B.; Shao, Y. C.; Wang, Y. F.; Hsieh, S. H.; Hsueh, H. C.; Chiou, J. W.; Chen, C. H.; Jang, L. Y.; Cheng, C. L.; Pong, W. F.; Hu, Y. F.

    2015-06-01

    The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2- (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2- species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2-, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples.

  15. Charge-transfer transitions in triarylamine mixed-valence systems: the effect of temperature

    NASA Astrophysics Data System (ADS)

    Coropceanu, V.; Lambert, C.; Nöll, G.; Brédas, J. L.

    2003-05-01

    The temperature dependence of inter-valence charger-transfer transitions has been investigated for three triarylamine-based mixed-valence systems: (bis-{4-[ N, N-di(4-methoxyphenyl)amino]-phenyl}butadiyne, 1+), (4,4 '-bis[ N, N-di(4-methoxyphenyl)amino] biphenyl, 2+), and ( N, N, N', N'-tetraphenyl-1,4-phenylenediamine, 3+). Although the band shape of 1+- 3+ changes with temperature, neither the position of the transition maximum nor the integral intensity are significantly affected by temperature. The shape of the absorption bands is analyzed in the framework of a dynamic vibronic model.

  16. An Intracranial EEG Study of the Neural Dynamics of Musical Valence Processing.

    PubMed

    Omigie, Diana; Dellacherie, Delphine; Hasboun, Dominique; George, Nathalie; Clement, Sylvain; Baulac, Michel; Adam, Claude; Samson, Severine

    2015-11-01

    The processing of valence is known to recruit the amygdala, orbitofrontal cortex, and relevant sensory areas. However, how these regions interact remains unclear. We recorded cortical electrical activity from 7 epileptic patients implanted with depth electrodes for presurgical evaluation while they listened to positively and negatively valenced musical chords. Time-frequency analysis suggested a specific role of the orbitofrontal cortex in the processing of positively valenced stimuli while, most importantly, Granger causality analysis revealed that the amygdala tends to drive both the orbitofrontal cortex and the auditory cortex in theta and alpha frequency bands, during the processing of valenced stimuli. Results from the current study show the amygdala to be a critical hub in the emotion processing network: specifically one that influences not only the higher order areas involved in the evaluation of a stimulus's emotional value but also the sensory cortical areas involved in the processing of its low-level acoustic features. PMID:24904066

  17. Band structure and density of states of. beta. -silicon nitride

    SciTech Connect

    Ren, S.Y.; Ching, W.Y.

    1980-01-01

    The electronic energy band structure of ..beta..-Si/sub 3/N/sub 4/ has been calculated using the first principles LCAO method. The bottom of the Conduction Band (CB) is at GAMMA and the top of the valence band (VB) is located along GAMMAA line. The very flat top VB along GAMMAA accounts for a large hole effective mass. The indirect band gap obtained is very close to the experimental value of 5.2 eV. The density of states (DOS) and partial DOS are also obtained and are in good agreement with photoemission data. In the VB region from -20. to -14. eV the states are entirely composed of N 2s states while in the range from -10.5 eV up, the states are predominately N 2p in character. In the CB region, the DOS is dominated by Si 3s and 3p orbital components. These results are consistent with charge analysis which indicates that on average, 0.56 electron is transferred from Si to N per Si-N bond.

  18. Energy band alignment of InGaZnO{sub 4}/Si heterojunction determined by x-ray photoelectron spectroscopy

    SciTech Connect

    Xie Zhangyi; Lu Hongliang; Xu Saisheng; Geng Yang; Sun Qingqing; Ding Shijin; Zhang, David Wei

    2012-12-17

    X-ray photoelectron spectroscopy was utilized to determine the valence band offset ({Delta}E{sub V}) of the InGaZnO{sub 4} (IGZO)/Si heterojunction. The IGZO films were grown on Si (100) using radio frequency magnetron sputtering. A value of {Delta}E{sub V} = 2.53 eV was obtained by using In 3d{sub 5/2}, Ga 2p{sub 3/2} core energy levels as references. Taking into consideration the experimental band gap of 3.20 eV of the IGZO, this would result in a conduction band offset {Delta}E{sub C} = 0.45 eV in this heterostructure.

  19. DERIVATION AND SIGNIFICANCE OF VALENCE MOLECULAR CONNECTIVITY

    EPA Science Inventory

    The physical basis for valence molecular connectivity was studied. The sigma sup upsilon and sigma values are cardinal numbers describing the electronic structure of atoms in their valence states. The value (sigma sup upsilon) + (sigma) describes the volume of a bonding atom whil...

  20. The Valence Bond Interpretation of Molecular Geometry.

    ERIC Educational Resources Information Center

    Smith, Derek W.

    1980-01-01

    Presents ways in which the valence bond (VB) theory describes the bonding and geometry of molecules, following directly from earlier principles laid down by Pauling and others. Two other theories (molecular orbital approach and valence shell electron pair repulsion) are discussed and compared to VB. (CS)

  1. Valence-Bond Theory and Chemical Structure.

    ERIC Educational Resources Information Center

    Klein, Douglas J.; Trinajstic, Nenad

    1990-01-01

    Discussed is the importance of valence bond theory on the quantum-mechanical theory of chemical structure and the nature of the chemical bond. Described briefly are early VB theory, development of VB theory, modern versions, solid-state applications, models, treatment in textbooks, and flaws in criticisms of valence bond theory. (KR)

  2. Theoretical transition probabilities between the lowest 2S, 2P and 2D states of Na, K, Rb and Cs

    NASA Technical Reports Server (NTRS)

    Langhoff, S. R.; Bauschlicher, C. W., Jr.; Partridge, H.

    1985-01-01

    Theoretical transition probabilities between the lowest 2S, 2P and 2D states of the alkali atoms Na through Cs have been computed using near Hartree-Fock quality Slater basis sets. The important core-valence correlation effects are incorporated explicitly by a configuration-interaction procedure. For Cs, the calculations were repeated using a Gaussian basis set so that relativistic effects could be incorporated through an effective core potential procedure. The best calculated electric quadrupole Einstein coefficients are Na(196.3/s), K(103.6/s), Rb(72.4/s) and Cs(19.7/s). Core-valence effects become increasingly important down the column, and reduce the quadrupole transition strengths to about the same degree as for the 2P-2S and 2D-2P dipole-allowed transitions. Relativistic effects increase the quadrupole moment of Cs, but less so than in Ba, presumably because the alkali 2D states are more diffuse.

  3. Optical absorption and band gap reduction in (Fe1-xCrx)2O3 solid solutions: A first-principles study

    SciTech Connect

    Wang, Yong; Lopata, Kenneth A.; Chambers, Scott A.; Govind, Niranjan; Sushko, Petr V.

    2013-12-02

    We provide a detailed theoretical analysis of the character of optical transitions and band gap reduction in (Fe1-xCrx)2O3 solid solutions using extensive periodic model and embedded cluster calculations. Optical absorption bands for x = 0.0, 0.5, and 1.0 are assigned on the basis of timedependent density functional theory (TDDFT) calculations. A band-gap reduction of as much as 0.7 eV with respect to that of pure α-Fe2O3 is found. This result can be attributed to predominantly two effects: (i) the higher valence band edge for x ≈ 0.5, as compared to those in pure α-Fe2O3 and α-Cr2O3, and, (ii) the appearance of Cr  Fe d–d transitions in the solid solutions. Broadening of the valence band due to hybridization of the O 2p states with Fe and Cr 3d states also contributes to band gap reduction.

  4. Avoided valence transition in a plutonium superconductor

    PubMed Central

    Ramshaw, B. J.; Shekhter, Arkady; McDonald, Ross D.; Betts, Jon B.; Mitchell, J. N.; Tobash, P. H.; Mielke, C. H.; Bauer, E. D.; Migliori, Albert

    2015-01-01

    The d and f electrons in correlated metals are often neither fully localized around their host nuclei nor fully itinerant. This localized/itinerant duality underlies the correlated electronic states of the high-Tc cuprate superconductors and the heavy-fermion intermetallics and is nowhere more apparent than in the 5f valence electrons of plutonium. Here, we report the full set of symmetry-resolved elastic moduli of PuCoGa5—the highest Tc superconductor of the heavy fermions (Tc = 18.5 K)—and find that the bulk modulus softens anomalously over a wide range in temperature above Tc. The elastic symmetry channel in which this softening occurs is characteristic of a valence instability—therefore, we identify the elastic softening with fluctuations of the plutonium 5f mixed-valence state. These valence fluctuations disappear when the superconducting gap opens at Tc, suggesting that electrons near the Fermi surface play an essential role in the mixed-valence physics of this system and that PuCoGa5 avoids a valence transition by entering the superconducting state. The lack of magnetism in PuCoGa5 has made it difficult to reconcile with most other heavy-fermion superconductors, where superconductivity is generally believed to be mediated by magnetic fluctuations. Our observations suggest that valence fluctuations play a critical role in the unusually high Tc of PuCoGa5. PMID:25737548

  5. Avoided valence transition in a plutonium superconductor.

    PubMed

    Ramshaw, B J; Shekhter, Arkady; McDonald, Ross D; Betts, Jon B; Mitchell, J N; Tobash, P H; Mielke, C H; Bauer, E D; Migliori, Albert

    2015-03-17

    The d and f electrons in correlated metals are often neither fully localized around their host nuclei nor fully itinerant. This localized/itinerant duality underlies the correlated electronic states of the high-Tc cuprate superconductors and the heavy-fermion intermetallics and is nowhere more apparent than in the 5f valence electrons of plutonium. Here, we report the full set of symmetry-resolved elastic moduli of PuCoGa5--the highest Tc superconductor of the heavy fermions (Tc = 18.5 K)--and find that the bulk modulus softens anomalously over a wide range in temperature above Tc. The elastic symmetry channel in which this softening occurs is characteristic of a valence instability--therefore, we identify the elastic softening with fluctuations of the plutonium 5f mixed-valence state. These valence fluctuations disappear when the superconducting gap opens at Tc, suggesting that electrons near the Fermi surface play an essential role in the mixed-valence physics of this system and that PuCoGa5 avoids a valence transition by entering the superconducting state. The lack of magnetism in PuCoGa5 has made it difficult to reconcile with most other heavy-fermion superconductors, where superconductivity is generally believed to be mediated by magnetic fluctuations. Our observations suggest that valence fluctuations play a critical role in the unusually high Tc of PuCoGa5. PMID:25737548

  6. Valence Bond Theory of Correlated-Electron Superconductivity

    NASA Astrophysics Data System (ADS)

    Dutta, Tirthankar; Mazumdar, Sumit; Clay, Torsten

    Whether or not the weakly doped Mott-Hubbard semiconductor is superconducting remains controversial. We present a new valence bond theory of correlated-electron superconductivity, that has overlap with the original RVB approach, and yet is substantively different. Superconductivity within the theory emerges from a correlated-electron state in which there is a strong tendency to spin-singlet formation, and where the bandwidth due to pair-tunneling is very large. We show that such a situation occurs far away from the 1/2-filled band, at or near banfilling of 1/4. In the presence of electron-phonon interactions the 1/4-filled band can form a spin-paired CDW state that we have called a paired-electron crystal, and that is a Wigner crystal of pairs. In the presence of frustration the spin-paired bonds become mobile to give a paired-electron liquid, which is a precursor to superconductivity. The superconducting state here is reached from a co-operative effect between electron-electron and electron-phonon interactions, and the theory thus has overlap also with the bipolaron theory of superconductivity. We will present exact numerical calculations on a 4x4 lattice using the valence bond basis to substantiate our conjectures. Supported by DOE Grant DE-FG02-06ER46315 and NSF-CHE-151475.

  7. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    NASA Astrophysics Data System (ADS)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  8. Photoionization of iodine atoms: Rydberg series which converge to the I{sup +}({sup 1}S{sub 0})<-I({sup 2}P{sub 3/2}) threshold

    SciTech Connect

    Eypper, Marie; Innocenti, Fabrizio; Morris, Alan; Dyke, John M.; Stranges, Stefano; West, John B.; King, George C.

    2010-06-28

    Relative partial photoionization cross sections and angular distribution parameters {beta} have been measured for the first and fourth (5p){sup -1} photoelectron (PE) bands of atomic iodine by performing angle-resolved constant-ionic-state (CIS) measurements on these PE bands between the {sup 1}D{sub 2} and {sup 1}S{sub 0} (5p){sup -1} ionic thresholds in the photon energy region of 12.9-14.1 eV. Rydberg series arising from the 5p{yields}ns and 5p{yields}nd excitations are observed in both the first PE band, I{sup +}({sup 3}P{sub 2})<-I({sup 2}P{sub 3/2}), and the fourth PE band, I{sup +}({sup 1}D{sub 2})<-I({sup 2}P{sub 3/2}), CIS spectra. For each Rydberg state, the resonance energy, quantum defect, linewidth, line shape, and photoelectron angular distribution parameter {beta} have been determined. For the {beta}-plots for each PE band, only resonances corresponding to 5p{yields}nd excitations are observed; no resonances were seen at photon energies corresponding to the 5p{yields}ns resonances in the CIS spectra. The {beta}-plots are interpreted in terms of the parity unfavored channel with j{sub t}=4 being the major contributor at the 5p{yields}nd resonance positions, where j{sub t} is the quantum number for angular momentum transferred between the molecule, and the ion and photoelectron. Comparison of the results obtained with those published for bromine shows reasonably good agreement for the CIS spectra but poor agreement for the {beta}-plots. It appears that parity unfavored channels are playing a greater role in the valence (np){sup -1} ionization of atomic iodine than in the corresponding ionization of atomic bromine.

  9. Action versus valence in decision making

    PubMed Central

    Guitart-Masip, Marc; Duzel, Emrah; Dolan, Ray; Dayan, Peter

    2014-01-01

    The selection of actions, and the vigor with which they are executed, are influenced by the affective valence of predicted outcomes. This interaction between action and valence significantly influences appropriate and inappropriate choices and is implicated in the expression of psychiatric and neurological abnormalities, including impulsivity and addiction. We review a series of recent human behavioral, neuroimaging, and pharmacological studies whose key design feature is an orthogonal manipulation of action and valence. These studies find that the interaction between the two is subject to the critical influence of dopamine. They also challenge existing views that neural representations in the striatum focus on valence, showing instead a dominance of the anticipation of action. PMID:24581556

  10. 2p radioactivity studied by tracking technique

    SciTech Connect

    Mukha, Ivan

    2010-06-01

    The recent advance in experimental studies of short-lived exotic nuclei beyond the proton drip line is presented. In particular, in-flight decays of proton-unbound nuclei with picosecond lifetimes can be probed by a novel technique which tracks all decay products precisely, and the decay vertices as well as the angular correlations of the fragments are deduced from the measured trajectories. The corresponding pioneering experiment which identified a previously-unknown isotope {sup 19}Mg and its two-proton (2p) radioactivity as well as studied the reference 2p decay of the known isotope {sup 16}Ne is described. Systematic studies of other 2p precursors beyond the proton drip line are foreseen with this powerful technique whose sensitivity is larger by factor of 30 in comparison with a conventional invariant-mass method. The 2p radioactivity candidates {sup 30}Ar, {sup 34}Ca and {sup 26}S are discussed. Information about the respective one-proton unbound nuclei can be obtained with this technique by evaluating proton-heavy-fragment correlations. Systematic studies of nuclei beyond the proton drip line, e.g., the well-known proton resonances above the 'waiting points' in the astrophysical rp-process, {sup 69}Br and {sup 73}Br are feasible.

  11. Local atomic configuration and Auger Valence Electron Spectra in BiSrCaCuO single crystals

    SciTech Connect

    Fujiwara, Y.; Hirata, S.; Nishikubo, M.; Kobayashi, T. ); Nakayama, H.; Fujita, H. . Faculty of Engineering)

    1991-03-01

    This paper reports on Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} (2212) and Ca-doped Bi{sub 2}Sr{sub 2}CuO{sub y} (2201) single crystals systematically investigated by Auger Valence Electron Spectroscopy (AVES). In AVES measurements on two kinds of crystals, a drastic difference was observed in the spectral shape of Ca(2p,3p,3p), reflecting a difference in spin-orbit splitting induced by local atomic configuration in the vicinity of Ca atoms. Furthermore, Ca(2p,3p,4s) spectrum appeared in both the crystals, which indicates that the real valency of Ca atoms is deviated from + 2 in the crystals. These results suggest that AVES is a promising probe for characterizing local atomic configuration and valence electron states of the constituent elements.

  12. Relativistic CI calculations of spectroscopic data for the 2p{sup 6} and 2p{sup 5}3l configurations in Ne-like ions between Mg III and Kr XXVII

    SciTech Connect

    Jönsson, P.; Bengtsson, P.; Ekman, J.; Gustafsson, S.; Karlsson, L.B.; Gaigalas, G.; Froese Fischer, C.; Kato, D.; Murakami, I.; Sakaue, H.A.; Hara, H.; Watanabe, T.; Nakamura, N.; Yamamoto, N.

    2014-01-15

    Energies, E1, M1, E2, M2 transition rates, oscillator strengths, and lifetimes from relativistic configuration interaction calculations are reported for the states of the 2p{sup 6}, 2p{sup 5}3s, 2p{sup 5}3p, and 2p{sup 5}3d, configurations in all Ne-like ions between Mg III and Kr XXVII. Core–valence and core–core correlation effects are accounted for through single and double excitations to increasing sets of active orbitals. The Breit interaction and leading quantum electrodynamic effects are included as perturbations. The results are compared with experiments and other recent benchmark calculations. In Mg III, Al IV, Si V, P VI, S VII, and Ar IX, for which experimental energies are known to high accuracy, the mean error in the calculated energies is only 0.011%.

  13. Band gap engineering via electrostatic chemical strain in cation ordered LaSrAlO4

    NASA Astrophysics Data System (ADS)

    Balachandran, Prasanna V.; Rondinelli, James M.

    2014-03-01

    In this work, we employ density functional theory to examine a novel design route that employs A-site cation ordering to engineer the band gaps of (A,A')BO4 Ruddlesden-Popper (RP) oxides. Using LaSrAlO4 as a model material, we show that the band gap is highly sensitive to the A-site cation ordering ranging from 3-4.5 eV. When the [AlO2]-1 layers are interleaved between two chemically equivalent [LaO]1+ or [SrO]0+ layers, we obtain the smallest band gap with a reduction of ~1 eV determined from the Heyd, Scuseria, and Ernzerhof (HSE) hybrid exchange-correlation functional. We relate the observed band gap reduction to the local bond distortions arising from electrostatic chemical strain induced changes to the O 2 p and La 5 d states in the valence and conduction bands, respectively. The project was supported by The Defense Advanced Research Projects Agency (grant no. N66001-12-4224). The views, opinions, and/or findings reported here are solely those of the authors and do not represent official views of DARPA or DOD.

  14. A Valence Tautomeric Dinuclear Copper Tetrakisguanidine Complex.

    PubMed

    Wiesner, Sven; Wagner, Arne; Kaifer, Elisabeth; Himmel, Hans-Jörg

    2016-07-18

    We report on the first valence tautomeric dinuclear copper complex, featuring 2,3,5,6-tetrakis(tetramethylguanidino)pyridine as a bridging redox-active GFA (guanidino-functionalized aromatic) ligand. The preferred electronic structure of the complex is massively influenced by the environment. In the solid state and in nonpolar solvents a paramagnetic, dinuclear Cu(II) complex with a neutral GFA ligand is present. In polar solvents, the electronic structure changes to a diamagnetic, dinuclear Cu(I) complex with a twofold-oxidized GFA ligand. Using acetone as a solvent, both electronic structures are accessible due to a temperature-dependent equilibrium between the two valence tautomeric complexes. Our results pave the way for a broader use of valence tautomeric transition-metal complexes in catalytic reactions since anionic coligands can now be tolerated owing to the neutral/positively charged GFA ligand. PMID:27310335

  15. Molybdenum Valence in Basaltic Silicate Melts

    NASA Technical Reports Server (NTRS)

    Danielson, L. R.; Righter, K.; Newville, M.; Sutton, S.; Pando, K.

    2010-01-01

    The moderately siderophile element molybdenum has been used as an indicator in planetary differentiation processes, and is particularly relevant to core formation [for example, 1-6]. However, models that apply experimental data to an equilibrium differentiation scenario infer the oxidation state of molybdenum from solubility data or from multivariable coefficients from metal-silicate partitioning data [1,3,7]. Partitioning behavior of molybdenum, a multivalent element with a transition near the J02 of interest for core formation (IW-2) will be sensitive to changes in JO2 of the system and silicate melt structure. In a silicate melt, Mo can occur in either 4+ or 6+ valence state, and Mo6+ can be either octahedrally or tetrahedrally coordinated. Here we present first XANES measurements of Mo valence in basaltic run products at a range of P, T, and JO2 and further quantify the valence transition of Mo.

  16. Electronic states of BP, BP +, BP -, B 2P 2, B2P2- and B2P2+

    NASA Astrophysics Data System (ADS)

    Linguerri, Roberto; Komiha, Najia; Oswald, Rainer; Mitrushchenkov, Alexander; Rosmus, Pavel

    2008-05-01

    Using augmented sextuple zeta basis sets and internally contracted multireference configuration interaction (MRCI) wavefunctions, potential energy, electric dipole and transition moments have been computed for the X 3Π, a 1Σ +, b 1Π and A 3Σ - states of BP, X 2Σ + and A 2Π states of BP - and X 4Σ - and A 4Π states of BP +. From these data spectroscopic constants, radiative transition probabilities and photoelectron spectra of BP - and BP have been evaluated. The non-vanishing spin-orbit coupling elements between the four low lying triplet and singlet states of the neutral BP have also been calculated from MRCI wavefunctions. The treatment of the corresponding perturbations in the manifold of dense rovibrational states in the three lowest states would require a precise knowledge of the electronic excitation energies. Our best singlet-triplet separations (X-a) are calculated to be 2412 cm -1 (MRCI) and 2482 cm -1 (restricted coupled cluster with perturbative triples (RCCSD(T))) with an estimated error bound of about ±200 cm -1. All three states have long radiative lifetimes with cascading among the rovibrational levels of different states. The ionization energy IE e of BP is calculated to be 9.22 eV (MRCI) and 9.48 eV (RCCSD(T)), the electron affinity EA e 2.51 eV (MRCI) and 2.74 eV (RCCSD(T)). The photoelectron spectra of BP and BP - have been obtained from the Franck-Condon factors of the MRCI potentials. For the UV spectroscopy the dipole allowed radiative transition probabilities are given for A 3Σ - ↔ X 3Π, b 1Π ↔ a 1Σ + of BP, A 2Π ↔ X 2Σ + of BP - and A 4Π ↔ X 4Σ - of BP +. The ionization energy IE e of B 2P 2 of 8.71 eV and the electron affinity EA e of 2.34 eV have been calculated by the RCCSD(T)/aVQZ approach. Also the harmonic vibrational wavenumbers for the electronic ground states of the ions B2P2+ and B2P2- are given.

  17. Unified interpretation of Hund's first and second rules for 2p and 3p atoms.

    PubMed

    Oyamada, Takayuki; Hongo, Kenta; Kawazoe, Yoshiyuki; Yasuhara, Hiroshi

    2010-10-28

    A unified interpretation of Hund's first and second rules for 2p (C, N, O) and 3p (Si, P, S) atoms is given by Hartree-Fock (HF) and multiconfiguration Hartree-Fock (MCHF) methods. Both methods exactly satisfy the virial theorem, in principle, which enables one to analyze individual components of the total energy E(=T+V(en)+V(ee)), where T, V(en), and V(ee) are the kinetic, the electron-nucleus attraction, and the electron-electron repulsion energies, respectively. The correct interpretation for each of the two rules can only be achieved under the condition of the virial theorem 2T+V=0 by investigating how V(en) and V(ee) interplay to attain the lower total potential energy V(=V(en)+V(ee)). The stabilization of the more stable states for all the 2p and 3p atoms is ascribed to a greater V(en) that is caused by contraction of the valence orbitals accompanied with slight expansion of the core orbitals. The contraction of the valence orbitals for the two rules is a consequence of reducing the Hartree screening of the nucleus at short interelectronic distances. The reduced screening in the first rule is due to a greater amount of Fermi hole contributions in the state with the highest total spin-angular momentum S. The reduced screening in the second rule is due to the fact that two valence electrons are more likely to be on opposite sides of the nucleus in the state with the highest total orbital-angular momentum L. For each of the two rules, the inclusion of correlation does not qualitatively change the HF interpretation, but HF overestimates the energy difference ∣ΔE∣ between two levels being compared. The magnitude of the correlation energy is significantly larger for the lower L states than for the higher L states since two valence electrons in the lower L states are less likely to be on opposite sides of the nucleus. The MCHF evaluation of ∣ΔE∣ is in excellent agreement with experiment. The present HF and MCHF calculations demonstrate the above statements

  18. Unified interpretation of Hund's first and second rules for 2p and 3p atoms

    NASA Astrophysics Data System (ADS)

    Oyamada, Takayuki; Hongo, Kenta; Kawazoe, Yoshiyuki; Yasuhara, Hiroshi

    2010-10-01

    A unified interpretation of Hund's first and second rules for 2p (C, N, O) and 3p (Si, P, S) atoms is given by Hartree-Fock (HF) and multiconfiguration Hartree-Fock (MCHF) methods. Both methods exactly satisfy the virial theorem, in principle, which enables one to analyze individual components of the total energy E(=T +Ven+Vee), where T, Ven, and Vee are the kinetic, the electron-nucleus attraction, and the electron-electron repulsion energies, respectively. The correct interpretation for each of the two rules can only be achieved under the condition of the virial theorem 2T+V=0 by investigating how Ven and Vee interplay to attain the lower total potential energy V(=Ven+Vee). The stabilization of the more stable states for all the 2p and 3p atoms is ascribed to a greater Ven that is caused by contraction of the valence orbitals accompanied with slight expansion of the core orbitals. The contraction of the valence orbitals for the two rules is a consequence of reducing the Hartree screening of the nucleus at short interelectronic distances. The reduced screening in the first rule is due to a greater amount of Fermi hole contributions in the state with the highest total spin-angular momentum S. The reduced screening in the second rule is due to the fact that two valence electrons are more likely to be on opposite sides of the nucleus in the state with the highest total orbital-angular momentum L. For each of the two rules, the inclusion of correlation does not qualitatively change the HF interpretation, but HF overestimates the energy difference |ΔE | between two levels being compared. The magnitude of the correlation energy is significantly larger for the lower L states than for the higher L states since two valence electrons in the lower L states are less likely to be on opposite sides of the nucleus. The MCHF evaluation of |ΔE| is in excellent agreement with experiment. The present HF and MCHF calculations demonstrate the above statements that were originally

  19. Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties

    NASA Astrophysics Data System (ADS)

    Bian, Jiming; Wang, Minhuan; Miao, Lihua; Li, Xiaoxuan; Luo, Yingmin; Zhang, Dong; Zhang, Yuzhi

    2015-12-01

    High quality pure phase VO2 films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO2/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+, no other valence state of V was detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) phase transition with resistance change up to nearly three orders of magnitude was observed in the temperature dependent electrical resistance measurement, which was comparable to the high quality VO2 film grown directly on sapphire substrates. Our present findings will give a deeper insight into the physical mechanism behind the exotic characteristics of VO2/p-GaN heterostructure, and further motivate research in novel devices with combined functional properties of both correlated oxide and wide bandgap nitride semiconductors.

  20. Tel2p, a regulator of yeast telomeric length in vivo, binds to single-stranded telomeric DNA in vitro.

    PubMed

    Kota, R S; Runge, K W

    1999-09-01

    The telomeres of the yeast Saccharomyces cerevisiae consist of a duplex region of TG(1-3) repeats that acquire a single-stranded 3' extension of the TG(1-3) strand at the end of S-phase. The length of these repeats is kept within a defined range by regulators such as the TEL2-encoded protein (Tel2p). Here we show that Tel2p can specifically bind to single-stranded TG(1-3). Tel2p binding produced several shifted bands; however, only the slowest migrating band contained Tel2p. Methylation protection and interference experiments as well as gel shift experiments using inosine-containing probes indicated that the faster migrating bands resulted from Tel2p-mediated formation of DNA secondary structures held together by G-G interactions. Tel2p bound to single-stranded substrates that were at least 19 bases in length and contained 14 bases of TG(1-3), and also to double-stranded/single-stranded hybrid substrates with a 3' TG(1-3) overhang. Tel2p binding to a hybrid substrate with a 24 base single-stranded TG(1-3) extension also produced a band characteristic of G-G-mediated secondary structures. These data suggest that Tel2p could regulate telomeric length by binding to the 3' single-stranded TG(1-3) extension present at yeast telomeres. PMID:10525964

  1. Affective Priming with Associatively Acquired Valence

    ERIC Educational Resources Information Center

    Aguado, Luis; Pierna, Manuel; Saugar, Cristina

    2005-01-01

    Three experiments explored the effect of affectively congruent or incongruent primes on evaluation responses to positive or negative valenced targets (the "affective priming" effect). Experiment 1 replicated the basic affective priming effect with Spanish nouns: reaction time for evaluative responses (pleasant/unpleasant) were slower on…

  2. Mixed Valence and Spin Fluctuations in Cerium

    NASA Astrophysics Data System (ADS)

    Andraka, Bohdan

    The pseudobinary alloys Ce(Ni(,x)Co(,1-x))(,2), (Ce(,x)La(,1-x))Ni(,2) and (Ce(,x)Y(,1-x))Ni(,2), where 0 < x < 1, have been studied. The room temperature lattice constant, the magnetic susceptibility in the 6 to 300 K temperature range, the low temperature specific heat in the 0.4 to 25 K range and the electrical resistivity in the 0.4 to 300 K range were measured. Additionally, X -ray absorption around L(,3) edge has been studied using the synchroton radiation. Both, thermodynamic and L(,3) probes yield similar results for the changes of valence of Ce across these systems. We have established that Ce is in the saturated valence state in the Ce(Ni(,x)Co(,1 -x))(,2) for x < 0.25. The valence decreases with x in the 0.25 to 1 concentration range. Similarly, the valence of Ce decreases in the (Ce, Y)Ni(,2) systems upon substitution of Y for Ce. The results obtained for the (Ce(,x)La(,1 -x))Ni(,2) system are interpreted in terms of changes of the Ce('3+) impurity levels. Spin fluctuations due to the 3d electrons play an important role in these systems.

  3. Optical properties of Eu{sup 2+}/Eu{sup 3+} mixed valence, silicon nitride based materials

    SciTech Connect

    Kate, Otmar M. ten; Vranken, Thomas; Kolk, Erik van der; Jansen, Antonius P.J.; Hintzen, Hubertus T.

    2014-05-01

    Eu{sub 2}SiN{sub 3}, a mixed valence europium nitridosilicate, has been prepared via solid-state reaction synthesis and its oxidation behavior and optical properties have been determined. Furthermore, the stability of several isostructural compounds of the type M{sup 2+}L{sup 3+}SiN{sub 3} has been predicted by using the density functional theory calculations, and verified by the actual synthesis of CaLaSiN{sub 3}, CaEuSiN{sub 3} and EuLaSiN{sub 3}. The band gap of CaLaSiN{sub 3} was found around 3.2 eV giving the material its yellow color. Eu{sub 2}SiN{sub 3} on the other hand is black due to a combination of the 4f–5d absorption band of Eu{sup 2+} and the charge transfer band of Eu{sup 3+}. Thermogravimetric analysis and Raman spectroscopic study of Eu{sub 2}SiN{sub 3} revealed that oxidation of this compound in dry air takes place via a nitrogen retention complex. - Graphical abstract: Energy level scheme of Eu{sub 2}SiN{sub 3} showing the occupied N{sup 3−} 2p band (blue rectangle), unoccupied Eu{sup 2+} 5d band (white rectangle), occupied Eu{sup 2+} 4f ground states (filled red circles) and unoccupied Eu{sup 2+} ground states (open red circles). - Highlights: • Density functional theory calculations on the stability of M{sup 2+}L{sup 3+}SiN{sub 3} compounds. • Solid-state reaction synthesis of Eu{sub 2}SiN{sub 3}, CaLaSiN{sub 3}, EuLaSiN{sub 3} and CaEuSiN{sub 3}. • Determination of the Eu{sup 2+} 4f–5d and Eu{sup 3+} CT transitions in M{sup 2+}L{sup 3+}SiN{sub 3} compounds. • Oxidation of Eu{sub 2}SiN{sub 3} in dry air takes place via a nitrogen retention complex.

  4. Self-trapped exciton and core-valence luminescence in BaF{sub 2} nanoparticles

    SciTech Connect

    Vistovskyy, V. V. Zhyshkovych, A. V.; Chornodolskyy, Ya. M.; Voloshinovskii, A. S.; Myagkota, O. S.; Gloskovskii, A.; Gektin, A. V.; Vasil'ev, A. N.; Rodnyi, P. A.

    2013-11-21

    The influence of the BaF{sub 2} nanoparticle size on the intensity of the self-trapped exciton luminescence and the radiative core-valence transitions is studied by the luminescence spectroscopy methods using synchrotron radiation. The decrease of the self-trapped exciton emission intensity at energies of exciting photons in the range of optical exciton creation (hν ≤ E{sub g}) is less sensitive to the reduction of the nanoparticle sizes than in the case of band-to-band excitation, where excitons are formed by the recombination way. The intensity of the core-valence luminescence shows considerably weaker dependence on the nanoparticle sizes in comparison with the intensity of self-trapped exciton luminescence. The revealed regularities are explained by considering the relationship between nanoparticle size and photoelectron or photohole thermalization length as well as the size of electronic excitations.

  5. Affective ERP Processing in a Visual Oddball Task: Arousal, Valence, and Gender

    PubMed Central

    Rozenkrants, Bella; Polich, John

    2008-01-01

    Objective To assess affective event-related brain potentials (ERPs) using visual pictures that were highly distinct on arousal level/valence category ratings and a response task. Methods Images from the International Affective Pictures System (IAPS) were selected to obtain distinct affective arousal (low, high) and valence (negative, positive) rating levels. The pictures were used as target stimuli in an oddball paradigm, with a visual pattern as the standard stimulus. Participants were instructed to press a button whenever a picture occurred and to ignore the standard. Task performance and response time did not differ across conditions. Results High-arousal compared to low-arousal stimuli produced larger amplitudes for the N2, P3, early slow wave, and late slow wave components. Valence amplitude effects were weak overall and originated primarily from the later waveform components and interactions with electrode position. Gender differences were negligible. Conclusion The findings suggest that arousal level is the primary determinant of affective oddball processing, and valence minimally influences ERP amplitude. Significance Affective processing engages selective attentional mechanisms that are primarily sensitive to the arousal properties of emotional stimuli. The application and nature of task demands are important considerations for interpreting these effects. PMID:18783987

  6. Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As

    SciTech Connect

    Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy; Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z.; Sadowski, Janusz

    2013-12-04

    Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

  7. Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques

    PubMed Central

    Limaye, Mukta V.; Chen, S. C.; Lee, C. Y.; Chen, L. Y.; Singh, Shashi B.; Shao, Y. C.; Wang, Y. F.; Hsieh, S. H.; Hsueh, H. C.; Chiou, J. W.; Chen, C. H.; Jang, L. Y.; Cheng, C. L.; Pong, W. F.; Hu, Y. F.

    2015-01-01

    The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2− (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2− species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2−, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples. PMID:26098075

  8. Distinct cerebellar lobules process arousal, valence and their interaction in parallel following a temporal hierarchy.

    PubMed

    Styliadis, Charis; Ioannides, Andreas A; Bamidis, Panagiotis D; Papadelis, Christos

    2015-04-15

    The cerebellum participates in emotion-related neural circuits formed by different cortical and subcortical areas, which sub-serve arousal and valence. Recent neuroimaging studies have shown a functional specificity of cerebellar lobules in the processing of emotional stimuli. However, little is known about the temporal component of this process. The goal of the current study is to assess the spatiotemporal profile of neural responses within the cerebellum during the processing of arousal and valence. We hypothesized that the excitation and timing of distinct cerebellar lobules is influenced by the emotional content of the stimuli. By using magnetoencephalography, we recorded magnetic fields from twelve healthy human individuals while passively viewing affective pictures rated along arousal and valence. By using a beamformer, we localized gamma-band activity in the cerebellum across time and we related the foci of activity to the anatomical organization of the cerebellum. Successive cerebellar activations were observed within distinct lobules starting ~160ms after the stimuli onset. Arousal was processed within both vermal (VI and VIIIa) and hemispheric (left Crus II) lobules. Valence (left VI) and its interaction (left V and left Crus I) with arousal were processed only within hemispheric lobules. Arousal processing was identified first at early latencies (160ms) and was long-lived (until 980ms). In contrast, the processing of valence and its interaction to arousal was short lived at later stages (420-530ms and 570-640ms respectively). Our findings provide for the first time evidence that distinct cerebellar lobules process arousal, valence, and their interaction in a parallel yet temporally hierarchical manner determined by the emotional content of the stimuli. PMID:25665964

  9. Resonant valence bond states in zinc vacancies induce the ferromagnetism of ZnO

    NASA Astrophysics Data System (ADS)

    Sun, Shih-Jye

    2016-05-01

    A theoretical model was proposed to investigate the mechanism of ferromagnetism in ZnO as well as to simulate the experimental result that the ferromagnetism can be enhanced by UV irradiation as UV photon energy is equivalent to the band gap. In the model, the spin moments arise from the trapped electrons in oxygen vacancy states and coexist with the itinerant electrons which reside in zinc vacancy states and fall into resonant valence bond states. Charge exchange between the conduction band of ZnO and both vacancy states makes electrons on both vacancy states delocalized and results in a decrease of the ferromagnetism as well.

  10. Pion valence-quark parton distribution function

    NASA Astrophysics Data System (ADS)

    Chang, Lei; Thomas, Anthony W.

    2015-10-01

    Within the Dyson-Schwinger equation formulation of QCD, a rainbow ladder truncation is used to calculate the pion valence-quark distribution function (PDF). The gap equation is renormalized at a typical hadronic scale, of order 0.5 GeV, which is also set as the default initial scale for the pion PDF. We implement a corrected leading-order expression for the PDF which ensures that the valence-quarks carry all of the pion's light-front momentum at the initial scale. The scaling behavior of the pion PDF at a typical partonic scale of order 5.2 GeV is found to be (1 - x) ν, with ν ≃ 1.6, as x approaches one.

  11. Photoswitchable stable charge-distributed states in a new cobalt complex exhibiting photo-induced valence tautomerism.

    PubMed

    Slota, Michael; Blankenhorn, Marian; Heintze, Eric; Vu, Minh; Hübner, Ralph; Bogani, Lapo

    2015-01-01

    We report the synthesis and magnetic and photomagnetic behaviour of a novel valence tautomeric cobalt complex, [Co(3,5-dbbq)2(μ-bpym)] (1) (3,5-dbbq = 3,5-di-tert-butyl-1,2-benzoquinone and μ-bpym = 2,2'-bipyrimidine). The synthesis is performed by reacting Co2(CO)8 and μ-bpym in the presence of the ligand 3,5-dbbq in a mixed solvent under inert atmosphere. The magnetic behavior clearly shows the presence of electron transfer from the catecholate ligand to the cobalt center, producing valence tautomers of [Co(II)(SQ)2] with a transition temperature (T1/2) of 215 K. Photomagnetic studies, performed via both SQUID magnetometry and X-band electron paramagnetic resonance, show the clear presence of photoinduced valence tautomerism, at temperatures considerably higher than previous systems. A metastable charge distribution is observed, strengthening previous investigations on the character of mixed valence ligands. Entropy-driven valence tautomeric interconversion is observed, and drives the transition to the most stable charge distribution. The complex has the ability to coordinate and can be used as a photoswitchable building block, with the photomagnetic characterisation evidencing a metastable state lifetime of the photo-induced valence tautomeric process of ca. 2.9 × 10(4) s below 20 K. The observed yields are higher than ones in similar systems, showing that tiny changes in the molecular structures may have a huge impact. PMID:26470791

  12. Pattern classification of valence in depression.

    PubMed

    Habes, I; Krall, S C; Johnston, S J; Yuen, K S L; Healy, D; Goebel, R; Sorger, B; Linden, D E J

    2013-01-01

    Neuroimaging biomarkers of depression have potential to aid diagnosis, identify individuals at risk and predict treatment response or course of illness. Nevertheless none have been identified so far, potentially because no single brain parameter captures the complexity of the pathophysiology of depression. Multi-voxel pattern analysis (MVPA) may overcome this issue as it can identify patterns of voxels that are spatially distributed across the brain. Here we present the results of an MVPA to investigate the neuronal patterns underlying passive viewing of positive, negative and neutral pictures in depressed patients. A linear support vector machine (SVM) was trained to discriminate different valence conditions based on the functional magnetic resonance imaging (fMRI) data of nine unipolar depressed patients. A similar dataset obtained in nine healthy individuals was included to conduct a group classification analysis via linear discriminant analysis (LDA). Accuracy scores of 86% or higher were obtained for each valence contrast via patterns that included limbic areas such as the amygdala and frontal areas such as the ventrolateral prefrontal cortex. The LDA identified two areas (the dorsomedial prefrontal cortex and caudate nucleus) that allowed group classification with 72.2% accuracy. Our preliminary findings suggest that MVPA can identify stable valence patterns, with more sensitivity than univariate analysis, in depressed participants and that it may be possible to discriminate between healthy and depressed individuals based on differences in the brain's response to emotional cues. PMID:24179819

  13. Pattern classification of valence in depression☆

    PubMed Central

    Habes, I.; Krall, S.C.; Johnston, S.J.; Yuen, K.S.L.; Healy, D.; Goebel, R.; Sorger, B.; Linden, D.E.J.

    2013-01-01

    Neuroimaging biomarkers of depression have potential to aid diagnosis, identify individuals at risk and predict treatment response or course of illness. Nevertheless none have been identified so far, potentially because no single brain parameter captures the complexity of the pathophysiology of depression. Multi-voxel pattern analysis (MVPA) may overcome this issue as it can identify patterns of voxels that are spatially distributed across the brain. Here we present the results of an MVPA to investigate the neuronal patterns underlying passive viewing of positive, negative and neutral pictures in depressed patients. A linear support vector machine (SVM) was trained to discriminate different valence conditions based on the functional magnetic resonance imaging (fMRI) data of nine unipolar depressed patients. A similar dataset obtained in nine healthy individuals was included to conduct a group classification analysis via linear discriminant analysis (LDA). Accuracy scores of 86% or higher were obtained for each valence contrast via patterns that included limbic areas such as the amygdala and frontal areas such as the ventrolateral prefrontal cortex. The LDA identified two areas (the dorsomedial prefrontal cortex and caudate nucleus) that allowed group classification with 72.2% accuracy. Our preliminary findings suggest that MVPA can identify stable valence patterns, with more sensitivity than univariate analysis, in depressed participants and that it may be possible to discriminate between healthy and depressed individuals based on differences in the brain's response to emotional cues. PMID:24179819

  14. Human Amygdala Represents the Complete Spectrum of Subjective Valence

    PubMed Central

    Jin, Jingwen; Zelano, Christina; Gottfried, Jay A.

    2015-01-01

    Although the amygdala is a major locus for hedonic processing, how it encodes valence information is poorly understood. Given the hedonic potency of odor stimuli and the amygdala's anatomical proximity to the peripheral olfactory system, we combined high-resolution fMRI with pattern-based multivariate techniques to examine how valence information is encoded in the amygdala. Ten human subjects underwent fMRI scanning while smelling 9 odorants that systematically varied in perceived valence. Representational similarity analyses showed that amygdala codes the entire dimension of valence, ranging from pleasantness to unpleasantness. This unidimensional representation significantly correlated with self-reported valence ratings but not with intensity ratings. Furthermore, within-trial valence representations evolved over time, prioritizing earlier differentiation of unpleasant stimuli. Together, these findings underscore the idea that both spatial and temporal features uniquely encode pleasant and unpleasant odor valence in the amygdala. The availability of a unidimensional valence code in the amygdala, distributed in both space and time, would create greater flexibility in determining the pleasantness or unpleasantness of stimuli, providing a mechanism by which expectation, context, attention, and learning could influence affective boundaries for guiding behavior. SIGNIFICANCE STATEMENT Our findings elucidate the mechanisms of affective processing in the amygdala by demonstrating that this brain region represents the entire valence dimension from pleasant to unpleasant. An important implication of this unidimensional valence code is that pleasant and unpleasant valence cannot coexist in the amygdale because overlap of fMRI ensemble patterns for these two valence extremes obscures their unique content. This functional architecture, whereby subjective valence maps onto a pattern continuum between pleasant and unpleasant poles, offers a robust mechanism by which context

  15. Probing electron correlation through radiative lifetime measurements upon inner-valence photoionization of Ne and Ar

    NASA Astrophysics Data System (ADS)

    Suzuki, Norihiro; Kosugi, Satoshi; Ito, Yumi; Inoue, Naoki; Nagoshi, Tatsuro; Kuze, Nobuhiko; Harries, James R.; Sullivan, James P.; Nagata, Tetsuo; Sokell, Emma; Koike, Fumihiro; Azuma, Yoshiro

    2016-07-01

    This work demonstrates that electron correlation can have a strong effect on the radiative lifetime of atoms. We report measurements of the radiative lifetimes of inner-valence hole states, the 3s3p6 2S1/2 state of Ar+ and the 2s2p6 2S1/2 state of Ne+ by using the time-correlated single photon counting technique combined with photoionization by synchrotron radiation. Theoretical calculations utilizing the multi-configuration Dirac–Fock method agreed well with the experimental results. In particular, the radiative lifetime was found to depend very sensitively on the mixing of valence excited state configurations. While the Ne+ 2s2p6 2S1/2 state only has relatively weak inter-shell correlation, Ar+ 3s3p6 2S1/2 state has strong intra-shell correlation within the M-shell. This intra-shell correlation enhances configuration mixing and causes the radiative lifetime of the Ar+ 3s3p6 2S1/2 state to become very much longer than that of the Ne+ 2s2p6 2S1/2 state.

  16. Intermediate Band Solar Cell with Extreme Broadband Spectrum Quantum Efficiency

    NASA Astrophysics Data System (ADS)

    Datas, A.; López, E.; Ramiro, I.; Antolín, E.; Martí, A.; Luque, A.; Tamaki, R.; Shoji, Y.; Sogabe, T.; Okada, Y.

    2015-04-01

    We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ˜6000 nm . To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidences indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable.

  17. Ab initio configuration interaction study of the B- and C-band photodissociation of methyl iodide

    NASA Astrophysics Data System (ADS)

    Alekseyev, Aleksey B.; Liebermann, Heinz-Peter; Buenker, Robert J.

    2011-01-01

    Multireference spin-orbit configuration interaction calculations have been carried out for the valence and low-lying Rydberg states of CH_3I. Potential energy surfaces along the C-I dissociation coordinate (minimal energy paths with respect to the umbrella angle) have been obtained as well as transition moments for excitation of the Rydberg states. It is shown that the B and C absorption bands of CH_3I are dominated by the perpendicular {}^3{R}_1, {^1R} (E) leftarrow tilde{X} A_1 transitions, while the {}^3R_2(E), ^3R_{0^+}(A_1) leftarrow tilde{X} A_1 transitions are very weak. It is demonstrated that the bound Rydberg states of the B and C bands are predissociated due to the interaction with the repulsive E and A_2 components of the {}^3A_1 state, with the {}^3A_1(E) state being the main decay channel. It is predicted that the only possibility to obtain the I(^2P_{3/2}) ground state atoms from the CH_3I photodissociation in the B band is by interaction of the {}^3R_1(E) state with the repulsive {}^1Q(E) valence state at excitation energies above 55 000 cm^{-1}. The calculated ab initio data are used to analyze the influence of the Rydberg state vibrational excitation on the decay process. It is shown that, in contrast to intuition, excitation of the ν _3 C-I stretching mode supresses the predissociation, whereas the ν _6 rocking vibration enhances the predissociation rate.

  18. Energy Correlation among Three Photoelectrons Emitted in Core-Valence-Valence Triple Photoionization of Ne

    NASA Astrophysics Data System (ADS)

    Hikosaka, Y.; Lablanquie, P.; Penent, F.; Palaudoux, J.; Andric, L.; Soejima, K.; Shigemasa, E.; Suzuki, I. H.; Nakano, M.; Ito, K.

    2011-09-01

    The direct observation of triple photoionization involving one inner shell and two valence electrons is reported. The energy distribution of the three photoelectrons emitted from Ne is obtained using a very efficient multielectron coincidence method using the magnetic bottle electron spectroscopic technique. A predominance of the direct path to triple photoionization for the formation of Ne3+ in the 1s2s22p4 configuration is observed. It is demonstrated that the energy distribution evolves with photon energy and indicates a significant difference with triple photoionization involving only valence electrons.

  19. Disentangling the impacts of outcome valence and outcome frequency on the post-error slowing

    PubMed Central

    Wang, Lijun; Tang, Dandan; Zhao, Yuanfang; Hitchman, Glenn; Wu, Shanshan; Tan, Jinfeng; Chen, Antao

    2015-01-01

    Post-error slowing (PES) reflects efficient outcome monitoring, manifested as slower reaction time after errors. Cognitive control account assumes that PES depends on error information, whereas orienting account posits that it depends on error frequency. This raises the question how the outcome valence and outcome frequency separably influence the generation of PES. To address this issue, we varied the probability of observation errors (50/50 and 20/80, correct/error) the “partner” committed by employing an observation-execution task and investigated the corresponding behavioral and neural effects. On each trial, participants first viewed the outcome of a flanker-run that was supposedly performed by a ‘partner’, and then performed a flanker-run themselves afterwards. We observed PES in the two error rate conditions. However, electroencephalographic data suggested error-related potentials (oERN and oPe) and rhythmic oscillation associated with attentional process (alpha band) were respectively sensitive to outcome valence and outcome frequency. Importantly, oERN amplitude was positively correlated with PES. Taken together, these findings support the assumption of the cognitive control account, suggesting that outcome valence and outcome frequency are both involved in PES. Moreover, the generation of PES is indexed by oERN, whereas the modulation of PES size could be reflected on the alpha band. PMID:25732237

  20. Valence-electron spectral change and charge transfer mechanism of CaSi 2 during CaSi 2H 2O reaction

    NASA Astrophysics Data System (ADS)

    Abe, S.; Nakayama, H.; Nishino, T.; Iida, S.

    1997-04-01

    The changes in the valence electron states of CaSi 2 during the chemical reaction with H 2O have been investigated by Auger valence electron spectroscopy (AVES). The drastic changes in the valence electron spectra of 3s and 3p states, which are caused by the oxidization of the Si atoms in CaSi 2, were observed in Si[2s, 2p, V] spectra for CaSi 2 after the reaction. In particular, the Si[2s, 2p, V] spectra of CaSi 2 samples reacted with H 2O at 60 or 80°C for 3 h were almost similar to that of SiO 2. The peak shift of Ca[2p, 3p, 3p] Auger transition toward the lower energy side has been observed, suggesting the formation of bonds between Ca 3p and O orbitals. New peaks due to CaO or CaOH bonds also appeared in the valence electron region of Ca[2p, 3p, V] Auger transition. The charge transfer and the chemical-bond formation can be well demonstrated by AVES during the CaSi 2H 2O reaction.

  1. The variational subspace valence bond method

    SciTech Connect

    Fletcher, Graham D.

    2015-04-07

    The variational subspace valence bond (VSVB) method based on overlapping orbitals is introduced. VSVB provides variational support against collapse for the optimization of overlapping linear combinations of atomic orbitals (OLCAOs) using modified orbital expansions, without recourse to orthogonalization. OLCAO have the advantage of being naturally localized, chemically intuitive (to individually model bonds and lone pairs, for example), and transferrable between different molecular systems. Such features are exploited to avoid key computational bottlenecks. Since the OLCAO can be doubly occupied, VSVB can access very large problems, and calculations on systems with several hundred atoms are presented.

  2. Strongly correlated valence electrons and core-level chemical bonding of Lithium at terapascal pressures

    NASA Astrophysics Data System (ADS)

    Hu, Anguang; Zhang, Fan

    2015-03-01

    As the simplest pure metal, lithium exhibits some novel properties on electrical conductivity and crystal structures under high pressure. All-electron density functional theory simulations, recently developed by using the linear combination of localized Slater atomic orbitals, revealed that the bandwidth of its valence bands remains almost unchanged within about 3.5 eV even up to a terapascal pressure range. This indicates that the development from delocalized to strongly correlated electronic systems takes place under compression, resulting in metal-semiconductor and superconductivity transitions together with a sequence of new high-pressure crystal phases, discovered experimentally. In contrast to the valence bands, the core-level bands become broadening up to about 10 eV at terapascal pressures. It means the transformation from chemical non-bonding to bonding for core electrons. Thus, dense lithium under compression can be characterized as core-level chemical bonding and a completely new class of strongly correlated materials with narrow bands filled in s-electron shells only.

  3. Energies and E1, M1, E2, and M2 transition rates for states of the 2s{sup 2}2p{sup 3}, 2s2p{sup 4}, and 2p{sup 5} configurations in nitrogen-like ions between F III and Kr XXX

    SciTech Connect

    Rynkun, P.; Jönsson, P.; Gaigalas, G.; Froese Fischer, C.

    2014-03-15

    Based on relativistic wavefunctions from multiconfiguration Dirac–Hartree–Fock and configuration interaction calculations, E1, M1, E2, and M2 transition rates, weighted oscillator strengths, and lifetimes are evaluated for the states of the (1s{sup 2})2s{sup 2}2p{sup 3},2s2p{sup 4}, and 2p{sup 5} configurations in all nitrogen-like ions between F III and Kr XXX. The wavefunction expansions include valence, core–valence, and core–core correlation effects through single–double multireference expansions to increasing sets of active orbitals. The computed energies agree very well with experimental values, with differences of only 300–600 cm{sup −1} for the majority of the levels and ions in the sequence. Computed transitions rates are in close agreement with available data from MCHF-BP calculations by Tachiev and Froese Fischer [G.I. Tachiev, C. Froese Fischer, A and A 385 (2002) 716].

  4. How fast is optically induced electron transfer in organic mixed valence systems?

    PubMed

    Lambert, C; Moos, M; Schmiedel, A; Holzapfel, M; Schäfer, J; Kess, M; Engel, V

    2016-07-28

    The rate of thermally induced electron transfer in organic mixed valence compounds has thoroughly been investigated by e.g. temperature dependent ESR spectroscopy. However, almost nothing is known about the dynamics of optically induced electron transfer processes in such systems. Therefore, we investigated these processes in mixed valence compounds based on triphenylamine redox centres bridged by conjugated spacers by NIR transient absorption spectroscopy with fs-time resolution. These experiments revealed an internal conversion (IC) process to be on the order of 50-200 fs which is equivalent to the back electron transfer after optical excitation into the intervalence charge transfer band. This IC is followed by ultrafast cooling to the ground state within 1 ps. Thus, in the systems investigated optically induced electron transfer is about 3-4 orders of magnitude faster than thermally induced ET. PMID:27376572

  5. Nernst effect of the intermediate valence compound YbAl3: revisiting the thermoelectric properties.

    PubMed

    Wei, Beipei; Zhang, Jiahao; Sun, Peijie; Wang, Wenquan; Wang, Nanlin; Steglich, Frank

    2015-03-18

    The Nernst effect and thermopower of the prototypical Yb-based intermediate valence compound YbAl(3) were investigated. Different to the thermopower whose absolute values are enhanced with increasing temperature and assume a broad maximum at 175 K, the Nernst coefficient of YbAl(3) is enhanced only below T ≈ 75 K. While the two quantities in the heavy-fermion compound CeCu(2)Si(2) were recently found to be related by the anomalous Hall mobility due to the local asymmetric Kondo scattering, this theorem fails when being applied to YbAl(3). Rather, the thermopower of YbAl(3) is well described by a simple narrow-band model. We discuss the reason for this in terms of the intermediate valence nature of YbAl(3) that is conceptually different from the local Kondo physics. PMID:25706931

  6. Kinetics of an oxygen - iodine active medium with iodine atoms optically pumped on the 2P1/2 - 2P3/2 transition

    NASA Astrophysics Data System (ADS)

    Zagidullin, M. V.; Malyshev, M. S.; Azyazov, V. N.

    2015-08-01

    The kinetics of the processes occurring in an O2 - I2 - He - H2O gas flow in which photodissociation of molecular iodine at a wavelength close to 500 nm and excitation of atomic iodine on the 2P1/2 - 2P3/2 transition by narrow-band radiation near 1315 nm are implemented successively has been analysed. It is shown that implementation of these processes allows one to form an oxygen - iodine medium with a high degree of dissociation of molecular iodine and a relative content of singlet oxygen O2(a1Δ) exceeding 10%. Having formed a supersonic gas flow with a temperature ~100 K from this medium, one can reach a small-signal gain of about 10-2 cm-1 on the 2P1/2 - 2P3/2 transition in iodine atoms. The specific power per unit flow cross section in the oxygen - iodine laser with this active medium may reach ~100 W cm-2.

  7. 2p-2p decay of 8C and isospin-allowed 2p decay of the isobaric-analog state in 8B

    NASA Astrophysics Data System (ADS)

    Charity, R. J.; Elson, J. M.; Manfredi, J.; Shane, R.; Sobotka, L. G.; Chajecki, Z.; Coupland, D.; Iwasaki, H.; Kilburn, M.; Lee, Jenny; Lynch, W. G.; Sanetullaev, A.; Tsang, M. B.; Winkelbauer, J.; Youngs, M.; Marley, S. T.; Shetty, D. V.; Wuosmaa, A. H.; Ghosh, T. K.; Howard, M. E.

    2010-10-01

    C8 is found to decay to four protons and an α particle in two 2p emission steps. The correlations between the protons in the first step (C8 to Be6) exhibit a significant enhancement in the region of the decay phase space where the two protons have small relative energy, a region sometimes called the diproton region. The decay of the isobaric analog of C8 in B8 is also found to decay by 2p emission. This is the first case of isospin-allowed 2p decay between isobaric analog states.

  8. 2p-2p decay of {sup 8}C and isospin-allowed 2p decay of the isobaric-analog state in {sup 8}B

    SciTech Connect

    Charity, R. J.; Elson, J. M.; Manfredi, J.; Shane, R.; Sobotka, L. G.; Chajecki, Z.; Coupland, D.; Iwasaki, H.; Kilburn, M.; Lee, Jenny; Lynch, W. G.; Sanetullaev, A.; Tsang, M. B.; Winkelbauer, J.; Youngs, M.; Marley, S. T.; Shetty, D. V.; Wuosmaa, A. H.; Ghosh, T. K.

    2010-10-15

    {sup 8}C is found to decay to four protons and an {alpha} particle in two 2p emission steps. The correlations between the protons in the first step ({sup 8}C to {sup 6}Be) exhibit a significant enhancement in the region of the decay phase space where the two protons have small relative energy, a region sometimes called the diproton region. The decay of the isobaric analog of {sup 8}C in {sup 8}B is also found to decay by 2p emission. This is the first case of isospin-allowed 2p decay between isobaric analog states.

  9. Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions

    SciTech Connect

    Devi, Vanita; Kumar, Ravindra; Joshi, B. C.; Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2015-06-14

    The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.

  10. Bulk band gaps in divalent hexaborides

    SciTech Connect

    Denlinger, Jonathan; Clack, Jules A.; Allen, James W.; Gweon, Gey-Hong; Poirier, Derek M.; Olson, Cliff G.; Sarrao, John L.; Bianchi, Andrea D.; Fisk, Zachary

    2002-08-01

    Complementary angle-resolved photoemission and bulk-sensitive k-resolved resonant inelastic x-ray scattering of divalent hexaborides reveal a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap assumed in several models of their novel ferromagnetism. This semiconducting gap implies that carriers detected in transport measurements arise from defects, and the measured location of the bulk Fermi level at the bottom of the conduction band implicates boron vacancies as the origin of the excess electrons. The measured band structure and X-point gap in CaB6 additionally provide a stringent test case for proper inclusion of many-body effects in quasi-particle band calculations.

  11. Electronic Structure and Bonding in Co-Based Single and Mixed Valence Oxides: A Quantum Chemical Perspective.

    PubMed

    Singh, Vijay; Major, Dan Thomas

    2016-04-01

    The mixed valence cobalt oxide, Co3O4, is a potential candidate as a photovoltaic (PV) material, which also exhibits intriguing chemical and catalytic properties. Here, we present a comparative study of the electronic, magnetic, and chemical bonding properties of mixed valence Co3O4 (i.e., Co(2+/3+)) with the related single valence CoO (i.e., Co(2+)) and Co2O3 (i.e., Co(3+)) oxides using density functional theory (DFT). We have employed a range of theoretical methods, including pure DFT, DFT+U, and a range-separated exchange-correlation functional (HSE06). We compare the electronic structure and band gap of the oxide materials, with available photoemission spectroscopy and optical band gaps. Our calculations suggest that the bonding between Co(3+) and O(2-) ions in Co2O3 and Co3O4 and Co(2+) and O(2-) ions in CoO and Co3O4 are rather different. We find that Co2O3 and Co3O4 are weakly correlated materials, whereas CoO is a strongly correlated material. Furthermore, our computed one-electron energy level diagrams reveal that strong Co-O antibonding states are present at the top of the valence band for all the cobalt oxides, hinting at a defect tolerant capacity in these materials. These results, which give a detailed picture of the chemical bonding in related single and mixed valence cobalt oxides, may serve as a guide to enhance the PV or photoelectrochemical activity of Co3O4, by reducing its internal defect states or changing its electronic structure by doping or alloying with suitable elements. PMID:27010797

  12. Gastric Banding

    MedlinePlus

    ... gastric banding before deciding to have the procedure. Advertisements for a device or procedure may not include ... feeds Follow FDA on Twitter Follow FDA on Facebook View FDA videos on YouTube View FDA photos ...

  13. Relationship Between Iron Valence States of Serpentine in CM Chondrites and Their Aqueous Alteration Degrees

    NASA Technical Reports Server (NTRS)

    Mikouchi, T.; Zolensky, M.; Satake, W.; Le, L.

    2012-01-01

    The 0.6-0.7 micron absorption band observed for C-type asteroids is caused by the presence of Fe(3+) in phyllosilicates . Because Fe-bearing phyllosilicates, especially serpentine, are the most dominant product of aqueous alteration in the most abundant carbonaceous chondrites, CM chondrites, it is important to understand the crystal chemistry of serpentine in CM chondrites to better understand spectral features of C-type asteroids. CM chondrites show variable degrees of aqueous alteration, which should be related to iron valences in serpentine. It is predicted that the Fe(3+)/Sum of (Fe) ratios of serpentine in CM chondrites decrease as alteration proceeds by Si and Fe(3+) substitutions from end-member cronstedtite to serpentine, which should be apparent in the absorption intensity of the 0.6-0.7 micron band from C-type asteroids. In fact, the JAXA Hayabusa 2 target (C-type asteroid: 1993 JU3) exhibits heterogeneous spectral features (0.7 micron absorption band disappears by rotation). From these points of view, we have analyzed iron valences of matrix serpentine in several CM chondrites which span the entire observed range of aqueous alteration using Synchrotron Radiation X-ray Absorption Near-Edge Structure (SR-XANES). In this abstract we discuss the relationship between obtained Fe(3+)/Sum of (Fe) ratios and alteration degrees by adding new data to our previous studies

  14. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques

    NASA Astrophysics Data System (ADS)

    Singh, S. D.; Nand, Mangla; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Shukla, D. K.; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Jha, S. N.; Phase, D. M.; Ganguli, Tapas

    2016-04-01

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al2O3 heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al2O3 substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al2O3 substrate. Surface related feature in Ni 2p3/2 core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al2O3 substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al2O3 layers. A type-I band alignment at NiO and Al2O3 heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  15. Supporting Collaboration and Creativity Through Mobile P2P Computing

    NASA Astrophysics Data System (ADS)

    Wierzbicki, Adam; Datta, Anwitaman; Żaczek, Łukasz; Rzadca, Krzysztof

    Among many potential applications of mobile P2P systems, collaboration applications are among the most prominent. Examples of applications such as Groove (although not intended for mobile networks), collaboration tools for disaster recovery (the WORKPAD project), and Skype's collaboration extensions, all demonstrate the potential of P2P collaborative applications. Yet, the development of such applications for mobile P2P systems is still difficult because of the lack of middleware.

  16. Deletion of GOLGA2P3Y but not GOLGA2P2Y is a risk factor for oligozoospermia.

    PubMed

    Sen, Sanjukta; Agarwal, Rupesh; Ambulkar, Prafulla; Hinduja, Indira; Zaveri, Kusum; Gokral, Jyotsna; Pal, Asoke; Modi, Deepak

    2016-02-01

    The AZFc locus on the human Y chromosome harbours several multicopy genes, some of which are required for spermatogenesis. It is believed that deletion of one or more copies of these genes is a cause of infertility in some men. GOLGA2LY is one of the genes in the AZFc locus and it exists in two copies, GOLGA2P2Y and GOLGA2P3Y. The involvement of GOLGA2LY gene copy deletions in male infertility, however, is unknown. This study aimed to investigate the association of deletions of GOLGA2P2Y and GOLGA2P3Y gene copies with male infertility and with sperm concentration and motility. The frequency of GOLGA2P3Y deletion was significantly higher in oligozoospermic men compared with normozoospermic men (7.7% versus 1.2%; P = 0.0001), whereas the frequency of GOLGA2P2Y deletion was comparable between oligozoospermic and normozoospermic men (10.3% versus 11.3%). The deletion of GOLGA2P3Y but not GOLGA2P2Y was significantly higher (P = 0.03) in men with gr/gr rearrangements, indicating that GOLGA2P3Y deletions increase the susceptibility of men with gr/gr rearrangements to oligozoospermia. Furthermore, men with GOLGA2P3Y deletion had reduced sperm concentration and motility compared with men without deletion or with deletion of GOLGA2P2Y. These findings indicate GOLGA2P3Y gene copy may be candidate AZFc gene for male infertility. PMID:26655651

  17. Teaching Valence Shell Electron Pair Repulsion (VSEPR) Theory

    ERIC Educational Resources Information Center

    Talbot, Christopher; Neo, Choo Tong

    2013-01-01

    This "Science Note" looks at the way that the shapes of simple molecules can be explained in terms of the number of electron pairs in the valence shell of the central atom. This theory is formally known as valence shell electron pair repulsion (VSEPR) theory. The article explains the preferred shape of chlorine trifluoride (ClF3),…

  18. Resonant-photoemission identification of the valence states of NiPS 3

    NASA Astrophysics Data System (ADS)

    Kelly, M. K.; Daniels, R. R.; Margaritondo, G.; Lévy, F.

    1984-04-01

    We monitored the resonant behavior of the Ni d satellite peaks in the valence band photoemission spectra of NiPS 3 at photon energies immediately below and immediately above the Ni3p threshold. The observed resonance gives an unequivocal identification of the satellite peaks and of the corresponding main Ni d features. The study of the electronic structure of this material and of the related compounds FePS 3 and HgPS 3 was extended to unoccupied states by means of partial-yield synchrotron-radiation photoemission spectroscopy.

  19. Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6

    NASA Astrophysics Data System (ADS)

    Butch, Nicholas P.; Paglione, Johnpierre; Chow, Paul; Xiao, Yuming; Marianetti, Chris A.; Booth, Corwin H.; Jeffries, Jason R.

    2016-04-01

    Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f -electron occupancy in the Kondo insulator SmB6 . Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

  20. Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB_{6}.

    PubMed

    Butch, Nicholas P; Paglione, Johnpierre; Chow, Paul; Xiao, Yuming; Marianetti, Chris A; Booth, Corwin H; Jeffries, Jason R

    2016-04-15

    Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB_{6}. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure. PMID:27127976

  1. The importance of L1 ORF2p cryptic sequence to ORF2p fragment-mediated cytotoxicity.

    PubMed

    Christian, Claiborne M; Kines, Kristine J; Belancio, Victoria P

    2016-01-01

    The Long Interspersed Element 1 (LINE1 or L1) ORF2 protein (ORF2p) can cause DNA damage through the activity of its endonuclease domain (EN). The DNA double-strand breaks (DSB) introduced by the ORF2p EN have the potential to be mutagenic. Previously, our lab has shown that ORF2p fragments containing the EN domain could be expressed in mammalian cells and have variable cytotoxicity. Inclusion of the ORF2p sequence C-terminal to the EN domain in these fragments both reduced the cytotoxicity of these fragments and increased their presence in the nucleus as detected by Western blot analysis. Here, we identify the amino acids (aa 270-274) in the newly-identified ORF2p Cryptic region (Cry) that may be important to the subcellular localization and cytotoxic potential of these EN-containing ORF2p fragments. PMID:27583184

  2. The importance of L1 ORF2p cryptic sequence to ORF2p fragment-mediated cytotoxicity

    PubMed Central

    Christian, Claiborne M.; Kines, Kristine J.; Belancio, Victoria P.

    2016-01-01

    ABSTRACT The Long Interspersed Element 1 (LINE1 or L1) ORF2 protein (ORF2p) can cause DNA damage through the activity of its endonuclease domain (EN). The DNA double-strand breaks (DSB) introduced by the ORF2p EN have the potential to be mutagenic. Previously, our lab has shown that ORF2p fragments containing the EN domain could be expressed in mammalian cells and have variable cytotoxicity. Inclusion of the ORF2p sequence C-terminal to the EN domain in these fragments both reduced the cytotoxicity of these fragments and increased their presence in the nucleus as detected by Western blot analysis. Here, we identify the amino acids (aa 270–274) in the newly-identified ORF2p Cryptic region (Cry) that may be important to the subcellular localization and cytotoxic potential of these EN-containing ORF2p fragments. PMID:27583184

  3. Architectural Representation of Valence in the Limbic System.

    PubMed

    Namburi, Praneeth; Al-Hasani, Ream; Calhoon, Gwendolyn G; Bruchas, Michael R; Tye, Kay M

    2016-06-01

    In order to thrive, animals must be able to recognize aversive and appetitive stimuli within the environment and subsequently initiate appropriate behavioral responses. This assignment of positive or negative valence to a stimulus is a key feature of emotional processing, the neural substrates of which have been a topic of study for several decades. Until recently, the result of this work has been the identification of specific brain regions, such as the basolateral amygdala (BLA) and nucleus accumbens (NAc), as important to valence encoding. The advent of modern tools in neuroscience has allowed further dissection of these regions to identify specific populations of neurons signaling the valence of environmental stimuli. In this review, we focus upon recent work examining the mechanisms of valence encoding, and provide a model for the systematic investigation of valence within anatomically-, genetically-, and functionally defined populations of neurons. PMID:26647973

  4. Molecular Orbital Simulations of Metal 1s2p Resonant Inelastic X-ray Scattering.

    PubMed

    Guo, Meiyuan; Källman, Erik; Sørensen, Lasse Kragh; Delcey, Mickaël G; Pinjari, Rahul V; Lundberg, Marcus

    2016-07-28

    For first-row transition metals, high-resolution 3d electronic structure information can be obtained using resonant inelastic X-ray scattering (RIXS). In the hard X-ray region, a K pre-edge (1s→3d) excitation can be followed by monitoring the dipole-allowed Kα (2p→1s) or Kβ (3p→1s) emission, processes labeled 1s2p or 1s3p RIXS. Here the restricted active space (RAS) approach, which is a molecular orbital method, is used for the first time to study hard X-ray RIXS processes. This is achieved by including the two sets of core orbitals in different partitions of the active space. Transition intensities are calculated using both first- and second-order expansions of the wave vector, including, but not limited to, electric dipoles and quadrupoles. The accuracy of the approach is tested for 1s2p RIXS of iron hexacyanides [Fe(CN)6](n-) in ferrous and ferric oxidation states. RAS simulations accurately describe the multiplet structures and the role of 2p and 3d spin-orbit coupling on energies and selection rules. Compared to experiment, relative energies of the two [Fe(CN)6](3-) resonances deviate by 0.2 eV in both incident energy and energy transfer directions, and multiplet splittings in [Fe(CN)6](4-) are reproduced within 0.1 eV. These values are similar to what can be expected for valence excitations. The development opens the modeling of hard X-ray scattering processes for both solution catalysts and enzymatic systems. PMID:27398775

  5. Isotope shifts of the 2 p3 /2-2 p1 /2 transition in B-like ions

    NASA Astrophysics Data System (ADS)

    Zubova, N. A.; Malyshev, A. V.; Tupitsyn, I. I.; Shabaev, V. M.; Kozhedub, Y. S.; Plunien, G.; Brandau, C.; Stöhlker, Th.

    2016-05-01

    Isotope shifts of the 2 p3 /2-2 p1 /2 transition in B-like ions are evaluated for a wide range of the nuclear charge number: Z =8 -92 . The calculations of the relativistic nuclear recoil and nuclear size effects are performed using a large-scale configuration-interaction Dirac-Fock-Sturm method. The corresponding QED corrections are also taken into account. The results of the calculations are compared with the theoretical values obtained with other methods. The accuracy of the isotope shifts of the 2 p3 /2-2 p1 /2 transition in B-like ions is significantly improved.

  6. Spectroscopic and Redox Studies of Valence-Delocalized [Fe2S2]+ Centers in Thioredoxin-Like Ferredoxins

    PubMed Central

    Subramanian, Sowmya; Duin, Evert C.; Fawcett, Sarah E. J.; Armstrong, Fraser A.; Meyer, Jacques; Johnson, Michael K.

    2015-01-01

    Reduced forms of the C56S and C60S variants of the thioredoxin-like Clostridium pasteurianum [Fe2S2] ferredoxin (CpFd) provide the only known examples of valence-delocalized [Fe2S2]+ clusters, which constitute a fundamental building block of all higher nuclearity Fe-S clusters. In this work, we have revisited earlier work on the CpFd variants and carried out redox and spectroscopic studies on the [Fe2S2]2+,+ centers in wild-type and equivalent variants of the highly homologous and structurally characterized Aquifex aeolicus ferredoxin 4 (AaeFd4) using EPR, UV-visible-NIR absorption, CD and variable-temperature MCD, and protein-film electrochemistry. The results indicate that the [Fe2S2]+ centers in the equivalent AaeFd4 and CpFd variants reversibly interconvert between similar valence-localized S = 1/2 and valence-delocalized S = 9/2 forms as a function of pH, with pKa values in the range 8.3-9.0, due to protonation of the coordinated serinate residue. However, freezing high-pH samples results in partial or full conversion from valence-delocalized S = 9/2 to valence-localized S = 1/2 [Fe2S2]+ clusters. MCD saturation magnetization data for valence-delocalized S = 9/2 [Fe2S2]+ centers facilitated determination of transition polarizations and thereby assignments of low-energy MCD bands associated with the Fe−Fe interaction. The assignments provide experimental assessment of the double exchange parameter, B, for valence-delocalized [Fe2S2]+ centers and demonstrate that variable-temperature MCD spectroscopy provides a means of detecting and investigating the properties of valence-delocalized S = 9/2 [Fe2S2]+ fragments in higher nuclearity Fe-S clusters. The origin of valence delocalization in thioredoxin-like ferredoxin Cys-to-Ser variants and Fe-S clusters in general is discussed in light of these results. PMID:25790339

  7. Spectroscopic and redox studies of valence-delocalized [Fe2S2](+) centers in thioredoxin-like ferredoxins.

    PubMed

    Subramanian, Sowmya; Duin, Evert C; Fawcett, Sarah E J; Armstrong, Fraser A; Meyer, Jacques; Johnson, Michael K

    2015-04-01

    Reduced forms of the C56S and C60S variants of the thioredoxin-like Clostridium pasteurianum [Fe2S2] ferredoxin (CpFd) provide the only known examples of valence-delocalized [Fe2S2](+) clusters, which constitute a fundamental building block of all higher nuclearity Fe-S clusters. In this work, we have revisited earlier work on the CpFd variants and carried out redox and spectroscopic studies on the [Fe2S2](2+,+) centers in wild-type and equivalent variants of the highly homologous and structurally characterized Aquifex aeolicus ferredoxin 4 (AaeFd4) using EPR, UV-visible-NIR absorption, CD and variable-temperature MCD, and protein-film electrochemistry. The results indicate that the [Fe2S2](+) centers in the equivalent AaeFd4 and CpFd variants reversibly interconvert between similar valence-localized S = 1/2 and valence-delocalized S = 9/2 forms as a function of pH, with pKa values in the range 8.3-9.0, because of protonation of the coordinated serinate residue. However, freezing high-pH samples results in partial or full conversion from valence-delocalized S = 9/2 to valence-localized S = 1/2 [Fe2S2](+) clusters. MCD saturation magnetization data for valence-delocalized S = 9/2 [Fe2S2](+) centers facilitated determination of transition polarizations and thereby assignments of low-energy MCD bands associated with the Fe-Fe interaction. The assignments provide experimental assessment of the double exchange parameter, B, for valence-delocalized [Fe2S2](+) centers and demonstrate that variable-temperature MCD spectroscopy provides a means of detecting and investigating the properties of valence-delocalized S = 9/2 [Fe2S2](+) fragments in higher nuclearity Fe-S clusters. The origin of valence delocalization in thioredoxin-like ferredoxin Cys-to-Ser variants and Fe-S clusters in general is discussed in light of these results. PMID:25790339

  8. Inelastic neutron scattering in valence fluctuation compounds

    SciTech Connect

    Jon M Lawrence

    2011-02-15

    The valence fluctuation compounds are rare earth intermetallics where hybridization of the nearly-localized 4f electrons with the conduction electrons leads to incorporation of the 4f's into the itinerant states. This hybridization slows down the conduction electrons and hence gives them a heavy effective mass, justifying application of the term 'heavy Fermion' (HF) to these materials. During the project period, we grew large single crystals of several such compounds and measured their properties using both standard thermodynamic probes and state-of-the-art inelastic neutron scattering. We obtained three main results. For the intermediate valence compounds CePd{sub 3} and YbAl{sub 3}, we showed that the scattering of neutrons by the fluctuations of the 4f magnetic moment does not have the momentum dependence expected for the itinerant heavy mass state; rather, the scattering is more typical of a localized spin fluctuation. We believe that incoherent scattering localizes the excitation. For the heavy Fermion compound Ce(Ni{sub 0.935}Pd{sub 0.065}){sub 2}Ge{sub 2}, which sits at a T = 0 critical point for transformation into an antiferromagnetic (AF) phase, we showed that the scattering from the AF fluctuations does not exhibit any of the divergences that are expected at a phase transition. We speculate that alloy disorder profoundly suppresses the growth of the fluctuating AF regions, leading to short range clusters rather than regions of infinite size. Finally, we explored the applicability of key concepts used to describe the behavior of rare earth heavy Fermions to uranium based HF compounds where the 5f electrons are itinerant as opposed to localized. We found that scaling laws relating the spin fluctuation energy measured in neutron scattering to the low temperature specific heat and susceptibility are valid for the uranium compounds, once corrections are made for AF fluctuations; however, the degeneracy of the high temperature moment is smaller than expected

  9. Band alignment of type I at (100)ZnTe/PbSe interface

    NASA Astrophysics Data System (ADS)

    Konovalov, Igor; Emelianov, Vitali; Linke, Ralf

    2016-06-01

    A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.

  10. Nucleophilic substitution at phosphorus centers (SN2@p).

    PubMed

    van Bochove, Marc A; Swart, Marcel; Bickelhaupt, F Matthias

    2007-12-01

    We have studied the characteristics of archetypal model systems for bimolecular nucleophilic substitution at phosphorus (SN2@P) and, for comparison, at carbon (SN2@C) and silicon (SN2@Si) centers. In our studies, we applied the generalized gradient approximation (GGA) of density functional theory (DFT) at the OLYP/TZ2P level. Our model systems cover nucleophilic substitution at carbon in X(-)+CH3Y (SN2@C), at silicon in X(-)+SiH3Y (SN2@Si), at tricoordinate phosphorus in X(-)+PH2Y (SN2@P3), and at tetracoordinate phosphorus in X(-)+POH2Y (SN2@P4). The main feature of going from SN2@C to SN2@P is the loss of the characteristic double-well potential energy surface (PES) involving a transition state [X--CH3--Y]- and the occurrence of a single-well PES with a stable transition complex, namely, [X--PH2--Y]- or [X--POH2--Y](-). The differences between SN2@P3 and SN2@P4 are relatively small. We explored both the symmetric and asymmetric (i.e. X, Y=Cl, OH) SN2 reactions in our model systems, the competition between backside and frontside pathways, and the dependence of the reactions on the conformation of the reactants. Furthermore, we studied the effect, on the symmetric and asymmetric SN2@P3 and S(N)2@P4 reactions, of replacing hydrogen substituents at the phosphorus centers by chlorine and fluorine in the model systems X(-)+PR2Y and X(-)+POR2Y, with R=Cl, F. An interesting phenomenon is the occurrence of a triple-well PES not only in the symmetric, but also in the asymmetric SN2@P4 reactions of X(-)+POCl2--Y. PMID:17990249

  11. A study of the valence shell electronic structure and photoionisation dynamics of s-triazine

    NASA Astrophysics Data System (ADS)

    Coriani, S.; Stener, M.; Decleva, P.; Holland, D. M. P.; Potts, A. W.; Karlsson, L.

    2015-04-01

    A joint experimental and theoretical approach has been used to study the valence shell electronic structure and photoionisation dynamics of s-triazine (1,3,5-triazine). Synchrotron radiation has been employed to record angle resolved photoelectron spectra of the complete valence shell for photon energies between 17.5 and 100 eV, thereby allowing photoelectron anisotropy parameters and branching ratios to be determined. Absolute photoionisation partial cross sections have been estimated as the product of these branching ratios and the absolute photoabsorption cross section. The Kohn-Sham and the time-dependent version of density functional theory methods have been used to calculate photoelectron anisotropy parameters and photoionisation partial cross sections, and these have been compared with the corresponding experimental data. The calculations predict that shape resonances affect the photoionisation dynamics of several of the molecular orbitals. The angle resolved photoelectron spectra suggest that the 1 a2″ (π) orbital is more tightly bound than the 5e‧(σ) orbital, and that the 4 a1‧ (σ) orbital is more tightly bound than the 1 a2‧ (σ) orbital, in agreement with the predicted molecular orbital sequence. For the outer valence orbitals the single-particle picture of ionisation holds but electron correlation becomes increasingly important for the inner valence 4e‧, 3e‧ and 3 a1‧ orbitals and leads to a redistribution of intensity. Instead of a readily distinguishable main-line, associated with each of these orbitals, the photoelectron intensity is spread over numerous satellite states and the resulting band is broad and featureless.

  12. Energies and E1, M1, E2, and M2 transition rates for states of the 2s22p3, 2s2p4, and 2p5 configurations in nitrogen-like ions between F III and Kr XXX

    NASA Astrophysics Data System (ADS)

    Rynkun, P.; Jönsson, P.; Gaigalas, G.; Froese Fischer, C.

    2014-03-01

    Based on relativistic wavefunctions from multiconfiguration Dirac-Hartree-Fock and configuration interaction calculations, E1, M1, E2, and M2 transition rates, weighted oscillator strengths, and lifetimes are evaluated for the states of the (1s2)2s22p3,2s2p4, and 2p5 configurations in all nitrogen-like ions between F III and Kr XXX. The wavefunction expansions include valence, core-valence, and core-core correlation effects through single-double multireference expansions to increasing sets of active orbitals. The computed energies agree very well with experimental values, with differences of only 300-600 cm-1 for the majority of the levels and ions in the sequence. Computed transitions rates are in close agreement with available data from MCHF-BP calculations by Tachiev and Froese Fischer [G.I. Tachiev, C. Froese Fischer, A&A 385 (2002) 716].

  13. Ferroelectricity and Rashba-type band splittings in metal halides

    NASA Astrophysics Data System (ADS)

    Kim, Minsung; Im, Jino; Freeman, Arthur; Ihm, Jisoon; Jin, Hosub

    2014-03-01

    In this study, we investigate Rashba-type band splittings in metal halides. We use a minimal tight-binding model and first principles calculations based on density functional theory to understand the electronic structures of the materials. We find that different types of Rashba bands occur in the conduction and valence band edges in terms of the angular momentum textures. Also, the characteristics of the band splittings will be discussed in connection with the ferroelectric property. Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

  14. Transition state region in the A-Band photodissociation of allyl iodide—A femtosecond extreme ultraviolet transient absorption study

    NASA Astrophysics Data System (ADS)

    Bhattacherjee, Aditi; Attar, Andrew R.; Leone, Stephen R.

    2016-03-01

    Femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy based on a high-harmonic generation source is used to study the 266 nm induced A-band photodissociation dynamics of allyl iodide (CH2 =CHCH2I). The photolysis of the C—I bond at this wavelength produces iodine atoms both in the ground (2P3/2, I) and spin-orbit excited (2P1/2, I*) states, with the latter as the predominant channel. Using XUV absorption at the iodine N4/5 edge (45-60 eV), the experiments constitute a direct probe of not only the long-lived atomic iodine reaction products but also the fleeting transition state region of the repulsive nIσ∗C—I excited states. Specifically, three distinct features are identified in the XUV transient absorption spectrum at 45.3 eV, 47.4 eV, and 48.4 eV (denoted transients A, B, and C, respectively), which arise from the repulsive valence-excited nσ∗ states and project onto the high-lying core-excited states of the dissociating molecule via excitation of 4d(I) core electrons. Transients A and B originate from 4d(I) → n(I) core-to-valence transitions, whereas transient C is best assigned to a 4d(I) →σ∗(C—I) transition. The measured differential absorbance of these new features along with the I/I* branching ratios known from the literature is used to suggest a more definitive assignment, albeit provisional, of the transients to specific dissociative states within the A-band manifold. The transients are found to peak around 55 fs-65 fs and decay completely by 145 fs-185 fs, demonstrating the ability of XUV spectroscopy to map the evolution of reactants into products in real time. The similarity in the energies of transients A and B with analogous features observed in methyl iodide [Attar et al. J. Phys. Chem. Lett. 6, 5072, (2015)] together with the new observation of transient C in the present work provides a more complete picture of the valence electronic structure in the transition state region. The results provide a benchmark for

  15. Band Together!

    ERIC Educational Resources Information Center

    Olson, Cathy Applefeld

    2011-01-01

    After nearly a decade as band director at St. James High School in St. James, Missouri, Derek Limback knows that the key to building a successful program is putting the program itself above everything else. Limback strives to augment not only his students' musical prowess, but also their leadership skills. Key to his philosophy is instilling a…

  16. Solvatochromism and piezochromism of pentacyanoferrates(II) and of mixed valence iron(II)—iron(III) and ruthenium(II)—ruthenium(III) species

    NASA Astrophysics Data System (ADS)

    Burgess, J.

    1989-01-01

    Pressure effects on the MLCT bands of the pyrazine- and 4-cyanopyridine-pentacyanoferrate(II) anions have been established. The relation of these piezochromic effects to the solvatochromism of each complex is put into the correlation between these parameters developed for other d6 ternary complexes. The conformance of piezochromic and solvatochromic efrects on MMCT bands for diiron and diruthenium mixed valence complexes to this correlation is examined.

  17. Valence bond and von Neumann entanglement entropy in Heisenberg ladders.

    PubMed

    Kallin, Ann B; González, Iván; Hastings, Matthew B; Melko, Roger G

    2009-09-11

    We present a direct comparison of the recently proposed valence bond entanglement entropy and the von Neumann entanglement entropy on spin-1/2 Heisenberg systems using quantum Monte Carlo and density-matrix renormalization group simulations. For one-dimensional chains we show that the valence bond entropy can be either less or greater than the von Neumann entropy; hence, it cannot provide a bound on the latter. On ladder geometries, simulations with up to seven legs are sufficient to indicate that the von Neumann entropy in two dimensions obeys an area law, even though the valence bond entanglement entropy has a multiplicative logarithmic correction. PMID:19792398

  18. Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals

    NASA Astrophysics Data System (ADS)

    Wang, Xinshun; Liu, Yang; Zhao, Panjuan; Guo, Zhongyi; Li, Yan; Qu, Shiliang

    2015-04-01

    The broad band upconversion luminescence in Yb3+:YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463 nm could be assigned to the 5d → 4f transitions of Yb2+ ions and the one at 692 nm could be attributed to the electron-hole recombination process on (Yb2+-F+) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb3+ to Yb2+ and (Yb2+-F+) centers have been induced by infrared femtosecond laser irradiation in Yb3+:YAG crystal.

  19. Optoelectronic devices based on MoTe2 p-n junction

    NASA Astrophysics Data System (ADS)

    Bie, Ya-Qing; Heuck, Mikkel; Furchi, Marco; Grosso, Gabriele; Zheng, Jiabao; Cao, Yuan; Navarro-Moratalla, Efren; Englund, Dirk; Jarillo-Herrero, Pablo

    2D transition metal dichalcogenides (2D-TMD), such as MoS2, have been verified with many remarkable physical properties, which include an indirect to direct band transition as a function of thickness and a valley dependent spin polarization. One of the 2D-TMD family members, 2H-MoTe2 has been shown to be a direct bandgap semiconductor as a monolayer and bilayer with a near infrared (NIR) bandgap of about 1.1eV. However, optoelectronic devices based on MoTe2 were so far not experimentally demonstrated. Here, we will present a high on-off ratio MoTe2 p-n junction enabled by a hexagonal boron nitride encapsulation technique. Our study of the MoTe2 p-n junction devices sheds light on designing efficient NIR optoelectronic devices such as photodetectors and energy harvesting cells and light emitters.

  20. Substrate-controlled band positions in CH₃NH₃PbI₃ perovskite films.

    PubMed

    Miller, Elisa M; Zhao, Yixin; Mercado, Candy C; Saha, Sudip K; Luther, Joseph M; Zhu, Kai; Stevanović, Vladan; Perkins, Craig L; van de Lagemaat, Jao

    2014-10-28

    Using X-ray and ultraviolet photoelectron spectroscopy, the surface band positions of solution-processed CH3NH3PbI3 perovskite thin films deposited on an insulating substrate (Al2O3), various n-type (TiO2, ZrO2, ZnO, and F:SnO2 (FTO)) substrates, and various p-type (PEDOT:PSS, NiO, and Cu2O) substrates are studied. Many-body GW calculations of the valence band density of states, with spin-orbit interactions included, show a clear correspondence with our experimental spectra and are used to confirm our assignment of the valence band maximum. These surface-sensitive photoelectron spectroscopy measurements result in shifting of the CH3NH3PbI3 valence band position relative to the Fermi energy as a function of substrate type, where the valence band to Fermi energy difference reflects the substrate type (insulating-, n-, or p-type). Specifically, the insulating- and n-type substrates increase the CH3NH3PbI3 valence band to Fermi energy difference to the extent of pinning the conduction band to the Fermi level; whereas, the p-type substrates decrease the valence band to Fermi energy difference. This observation implies that the substrate's properties enable control over the band alignment of CH3NH3PbI3 perovskite thin-film devices, potentially allowing for new device architectures as well as more efficient devices. PMID:25209217

  1. Valency states of Yb, Eu, Dy and Ti ions in Li 2B 4O 7 glasses

    NASA Astrophysics Data System (ADS)

    Kaczmarek, Sławomir M.; Tsuboi, Taiju; Boulon, Georges

    2003-06-01

    Absorption and emission spectra of Eu and Dy, Yb and Ti ions in Li 2B 4O 7 glasses grown in oxygen and hydrogen gas atmospheres were measured for valency states and lattice-sites analysis. For the Li 2B 4O 7 glass doped with Eu 2+, Eu 3+ and Dy 3+ ions which were grown in oxidizing and reducing atmospheres, absorption and emission bands due to these ions were investigated before and after γ-irradiation. For the Yb 3+-doped Li 2B 4O 7 glass, a weak, broad band was observed near the sharp 976.3 nm absorption band. The origin of this band is discussed in comparison with other glasses. Moreover, irradiation experiments using γ-rays were also performed in order to investigate the possibility of valency change of Yb ions. It was found that Ti 4+ ions, which are produced under oxidizing atmosphere, change to Ti 3+ ions after γ-irradiation with a dose of 10 5 Gy. An additional absorption band observed at about ˜500 nm is due to the Ti 3+ ions accompanied by charge-compensating vacancy and does not give any emission.

  2. Trisomy 2p: Analysis of unusual phenotypic findings

    SciTech Connect

    Lurie, I.W.; Ilyina, H.G.; Gurevich, D.B.

    1995-01-16

    We present three probands with partial trisomies 2p21-23 due to ins(4;2)(q21;p21p23) pat, 2p23-pter due to t(2;4)(p23;q35)mat, and 2p21-pter due to t(2;11)(p21;q23.3)mat. More than 50 cases of partial trisomy 2p have been reviewed and some abnormalities, unusual for most other types of structural autosomal imbalance, have been found in patients with inherited forms of 2p trisomy and in their non-karyotyped sibs. Neural tube defects (anencephaly, occipital encephalocele, and spina bifida) were found in five probands and 4/6 affected non-karyotyped sibs. The only triplicated segment common to all was 2p24. Different forms of {open_quotes}broncho-pulmonary a/hypoplasia{close_quotes} (including two cases of lung agenesis) were described in four patients (overlapping triplicated segment was 2p21-p25). Three patients (with overlapping triplicated segment 2p23-p25) had diaphragmatic hernia. Abnormal rotation of the heart or L-transposition of large vessels (with or without visceral heterotaxia) was found in two infants (overlapping triplicated segment 2p23-p24). In two patients with common triplicated segment 2p22.3-p25, neuroblastoma has been described. The occurrence of all these defects may be explained either by the action of the same gene(s) mapped to 2p24 or by action of some independent factors located in different segments of the short arm. Although the latter hypothesis is much less probable, it can not be rejected at the present time. We propose the existence of a genetic system controlling surveillance of an abnormal embryo to explain the phenotypic differences between patients with the same imbalance within a family. In some {open_quotes}restrictive{close_quotes} combinations the abnormal embryos will die, although in {open_quotes}permissive{close_quotes} combinations they can survive. 47 refs., 2 figs., 3 tabs.

  3. Network Awareness in P2P-TV Applications

    NASA Astrophysics Data System (ADS)

    Traverso, Stefano; Leonardi, Emilio; Mellia, Marco; Meo, Michela

    The increasing popularity of applications for video-streaming based on P2P paradigm (P2P-TV) is raising the interest of both broadcasters and network operators. The former see a promising technology to reduce the cost of streaming content over the Internet, while offering a world-wide service. The latter instead fear that the traffic offered by these applications can grow without control, affecting other services, and possibly causing network congestion and collapse. The “Network-Aware P2P-TV Application over Wise Networks” FP7 project aims at studying and developing a novel P2P-TV application offering the chance to broadcast high definition video to broadcasters and to carefully manage the traffic offered by peers to the network, therefore avoiding worries to Internet providers about network overload. In such context, we design a simulator to evaluate performance of different P2P-TV solutions, to compare them both considering end-users’ and network providers’ perspectives, such as quality of service perceived by subscribers and link utilization. In this paper, we provide some results that show how effective can be a network aware P2P-TV system.

  4. Improving P2P live-content delivery using SVC

    NASA Astrophysics Data System (ADS)

    Schierl, T.; Sánchez, Y.; Hellge, C.; Wiegand, T.

    2010-07-01

    P2P content delivery techniques for video transmission have become of high interest in the last years. With the involvement of client into the delivery process, P2P approaches can significantly reduce the load and cost on servers, especially for popular services. However, previous studies have already pointed out the unreliability of P2P-based live streaming approaches due to peer churn, where peers may ungracefully leave the P2P infrastructure, typically an overlay networks. Peers ungracefully leaving the system cause connection losses in the overlay, which require repair operations. During such repair operations, which typically take a few roundtrip times, no data is received from the lost connection. While taking low delay for fast-channel tune-in into account as a key feature for broadcast-like streaming applications, the P2P live streaming approach can only rely on a certain media pre-buffer during such repair operations. In this paper, multi-tree based Application Layer Multicast as a P2P overlay technique for live streaming is considered. The use of Flow Forwarding (FF), a.k.a. Retransmission, or Forward Error Correction (FEC) in combination with Scalable video Coding (SVC) for concealment during overlay repair operations is shown. Furthermore the benefits of using SVC over the use of AVC single layer transmission are presented.

  5. XMVB: a program for ab initio nonorthogonal valence bond computations.

    PubMed

    Song, Lingchun; Mo, Yirong; Zhang, Qianer; Wu, Wei

    2005-04-15

    An ab initio nonorthogonal valence bond program, called XMVB, is described in this article. The XMVB package uses Heitler-London-Slater-Pauling (HLSP) functions as state functions, and calculations can be performed with either all independent state functions for a molecule or preferably a few selected important state functions. Both our proposed paired-permanent-determinant approach and conventional Slater determinant expansion algorithm are implemented for the evaluation of the Hamiltonian and overlap matrix elements among VB functions. XMVB contains the capabilities of valence bond self-consistent field (VBSCF), breathing orbital valence bond (BOVB), and valence bond configuration interaction (VBCI) computations. The VB orbitals, used to construct VB functions, can be defined flexibly in the calculations depending on particular applications and focused problems, and they may be strictly localized, delocalized, or bonded-distorted (semidelocalized). The parallel version of XMVB based on MPI (Message Passing Interface) is also available. PMID:15704237

  6. A Valence Isomer Trapping Procedure for Introductory Organic Laboratory.

    ERIC Educational Resources Information Center

    Kurtz, David W.; Johnson, Richard P.

    1989-01-01

    Described is an experiment which illustrates valence isomerization, the trapping of a reactive intermediate and retrosynthetic analysis applied to the Diels-Alder reaction. Included is a background discussion, experimental procedures, and a discussion of the analysis. (CW)

  7. Narrow Band Gap Lead Sulfide Hole Transport Layers for Quantum Dot Photovoltaics.

    PubMed

    Zhang, Nanlin; Neo, Darren C J; Tazawa, Yujiro; Li, Xiuting; Assender, Hazel E; Compton, Richard G; Watt, Andrew A R

    2016-08-24

    The band structure of colloidal quantum dot (CQD) bilayer heterojunction solar cells is optimized using a combination of ligand modification and QD band gap control. Solar cells with power conversion efficiencies of up to 9.33 ± 0.50% are demonstrated by aligning the absorber and hole transport layers (HTL). Key to achieving high efficiencies is optimizing the relative position of both the valence band and Fermi energy at the CQD bilayer interface. By comparing different band gap CQDs with different ligands, we find that a smaller band gap CQD HTL in combination with a more p-type-inducing CQD ligand is found to enhance hole extraction and hence device performance. We postulate that the efficiency improvements observed are largely due to the synergistic effects of narrower band gap QDs, causing an upshift of valence band position due to 1,2-ethanedithiol (EDT) ligands and a lowering of the Fermi level due to oxidation. PMID:27421066

  8. Electronic structure and thermoelectric properties of half-Heusler compounds with eight electron valence count—KScX (X = C and Ge)

    NASA Astrophysics Data System (ADS)

    Ciftci, Yasemin O.; Mahanti, Subhendra D.

    2016-04-01

    Electronic band structure and structural properties of two representative half-Heusler (HH) compounds with 8 electron valence count (VC), KScC and KScGe, have been studied using first principles methods within density functional theory and generalized gradient approximation. These systems differ from the well studied class of HH compounds like ZrNiSn and ZrCoSb which have VC = 18 because of the absence of d electrons of the transition metal atoms Ni and Co. Electronic transport properties such as Seebeck coefficient (S), electrical conductivity (σ), electronic thermal conductivity (κe) (the latter two scaled by electronic relaxation time), and the power factor (S2σ) have been calculated using semi-classical Boltzmann transport theory within constant relaxation time approximation. Both the compounds are direct band gap semiconductors with band extrema at the X point. Their electronic structures show a mixture of heavy and light bands near the valance band maximum and highly anisotropic conduction and valence bands near the band extrema, desirable features of good thermoelectric. Optimal p- or n-type doping concentrations have been estimated based on thermopower and maximum power factors. The optimum room temperature values of S are ˜1.5 times larger than that of the best room temperature thermoelectric Bi2Te3. We also discuss the impact of the band structure on deviations from Weidemann-Franz law as one tunes the chemical potential across the band gap.

  9. Inelastic collisions of positrons with one-valence-electron targets

    NASA Technical Reports Server (NTRS)

    Abdel-Raouf, Mohamed Assad

    1990-01-01

    The total elastic and positronium formation cross sections of the inelastic collisions between positrons and various one-valence-electron atoms, (namely hydrogen, lithium, sodium, potassium and rubidium), and one-valence-electron ions, (namely hydrogen-like, lithium-like and alkaline-earth positive ions) are determined using an elaborate modified coupled-static approximation. Special attention is devoted to the behavior of the Ps cross sections at the energy regions lying above the Ps formation thresholds.

  10. Emotional valence and the free-energy principle.

    PubMed

    Joffily, Mateus; Coricelli, Giorgio

    2013-01-01

    The free-energy principle has recently been proposed as a unified Bayesian account of perception, learning and action. Despite the inextricable link between emotion and cognition, emotion has not yet been formulated under this framework. A core concept that permeates many perspectives on emotion is valence, which broadly refers to the positive and negative character of emotion or some of its aspects. In the present paper, we propose a definition of emotional valence in terms of the negative rate of change of free-energy over time. If the second time-derivative of free-energy is taken into account, the dynamics of basic forms of emotion such as happiness, unhappiness, hope, fear, disappointment and relief can be explained. In this formulation, an important function of emotional valence turns out to regulate the learning rate of the causes of sensory inputs. When sensations increasingly violate the agent's expectations, valence is negative and increases the learning rate. Conversely, when sensations increasingly fulfil the agent's expectations, valence is positive and decreases the learning rate. This dynamic interaction between emotional valence and learning rate highlights the crucial role played by emotions in biological agents' adaptation to unexpected changes in their world. PMID:23785269

  11. First-principles energy band calculation of Ruddlesden-Popper compound Sr3Sn2O7 using modified Becke-Johnson exchange potential

    NASA Astrophysics Data System (ADS)

    Kamimura, Sunao; Obukuro, Yuki; Matsushima, Shigenori; Nakamura, Hiroyuki; Arai, Masao; Xu, Chao-Nan

    2015-12-01

    The electronic structure of Sr3Sn2O7 is evaluated by the scalar-relativistic full potential linearized augmented plane wave (FLAPW+lo) method using the modified Becke-Johnson potential (Tran-Blaha potential) combined with the local density approximation correlation (MBJ-LDA). The fundamental gap between the valence band (VB) and conduction band (CB) is estimated to be 3.96 eV, which is close to the experimental value. Sn 5s states and Sr 4d states are predominant in the lower and upper CB, respectively. On the other hand, the lower VB is mainly composed of Sn 5s, 5p, and O 2p states, while the upper VB mainly consists of O 2p states. These features of the DOS are well reflected by the optical transition between the upper VB and lower CB, as seen in the energy dependence of the dielectric function. Furthermore, the absorption coefficient estimated from the MBJ-LDA is similar to the experimental result.

  12. Controlling the band gap energy of cluster-assembled materials.

    PubMed

    Mandal, Sukhendu; Reber, Arthur C; Qian, Meichun; Weiss, Paul S; Khanna, Shiv N; Sen, Ayusman

    2013-11-19

    Cluster-assembled materials combine the nanoscale size and composition-dependent properties of clusters, which have highly tunable magnetic and electronic properties useful for a great variety of potential technologies. To understand the emergent properties as clusters are assembled into hierarchical materials, we have synthesized 23 cluster-assembled materials composed of As7(3-)-based motifs and different countercations and measured their band gap energies. We found that the band gap energy varies from 1.09 to 2.21 eV. In addition, we have carried out first principles electronic structure studies to identify the physical mechanisms that enable control of the band gap edges of the cluster assemblies. The choice of counterion has a profound effect on the band gap energy in ionic cluster assemblies. The top of the valence band is localized on the arsenic cluster, while the conduction band edge is located on the alkali metal counterions. Changing the counterion changes the position of the conduction band edge, enabling control of the band gap energy. We can also vary the architecture of the ionic solid by incorporating cryptates as counterions, which provide charge but are separated from the clusters by bulky ligands. Higher dimensionality typically decreases the band gap energy through band broadening; however band gap energies increased upon moving from zero-dimensional (0D) to two-dimensional (2D) assemblies. This is because internal electric fields generated by the counterion preferentially stabilize the adjacent lone pair orbitals that mark the top of the valence band. Thus, the choice of the counterion can control the position of the conduction band edge of ionic cluster assemblies. In addition, the dimensionality of the solid via internal electric fields can control the valence band edge. Through covalently linking arsenic clusters into composite building blocks, we have also been able to tune the band gap energy. We used a theoretical description based on

  13. Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution

    SciTech Connect

    Majumdar, Kausik

    2014-05-07

    In this paper, we use a tight binding Hamiltonian with spin orbit coupling to study the real and complex band structures of relaxed and strained GaAs. A simple d orbital on-site energy shift coupled with appropriate scaling of the off-diagonal terms is found to correctly reproduce the band-edge shifts with strain. Four different 〈100〉 strain combinations, namely, uniaxial compressive, uniaxial tensile, biaxial compressive, and biaxial tensile strain are studied, revealing rich valence band structure and strong relative orientation dependent tunneling. It is found that complex bands are unable to provide unambiguous tunneling paths away from the Brillouin zone center. Tunneling current density distribution over the Brillouin zone is computed using non-equilibrium Green's function approach elucidating a physical picture of band to band tunneling.

  14. Determinants of Default in P2P Lending.

    PubMed

    Serrano-Cinca, Carlos; Gutiérrez-Nieto, Begoña; López-Palacios, Luz

    2015-01-01

    This paper studies P2P lending and the factors explaining loan default. This is an important issue because in P2P lending individual investors bear the credit risk, instead of financial institutions, which are experts in dealing with this risk. P2P lenders suffer a severe problem of information asymmetry, because they are at a disadvantage facing the borrower. For this reason, P2P lending sites provide potential lenders with information about borrowers and their loan purpose. They also assign a grade to each loan. The empirical study is based on loans' data collected from Lending Club (N = 24,449) from 2008 to 2014 that are first analyzed by using univariate means tests and survival analysis. Factors explaining default are loan purpose, annual income, current housing situation, credit history and indebtedness. Secondly, a logistic regression model is developed to predict defaults. The grade assigned by the P2P lending site is the most predictive factor of default, but the accuracy of the model is improved by adding other information, especially the borrower's debt level. PMID:26425854

  15. An efficient query mechanism base on P2P networks

    NASA Astrophysics Data System (ADS)

    Wang, Xiaohua; Mu, Aiqin; Zhao, Defang

    2013-07-01

    How to implement the efficient query is the key problem deployed on P2P networks. This paper analyses the shortage of several query algorithm, and presents a new algorithm DDI, which means distributed searching with double indices. It discusses the popularity of documents and the linking status of the networks, and calculates the availability of the nodes in whole network, determines the route of the query process. It compares the items of time using, the quantity of requests and update information by the emulate experiments. Along with the rapid development of computer network technology, peer-to-peer (referred to as P2P) network research has gradually become mature, and it is widely used in different fields, some large P2P computing project has entered the implementation stage. At present, many more popular software systems such as Gnutella, Freenet, Napster are deployed based on P2P technology. How to achieve effective information query has become one of the key problems of P2P research.

  16. Determinants of Default in P2P Lending

    PubMed Central

    2015-01-01

    This paper studies P2P lending and the factors explaining loan default. This is an important issue because in P2P lending individual investors bear the credit risk, instead of financial institutions, which are experts in dealing with this risk. P2P lenders suffer a severe problem of information asymmetry, because they are at a disadvantage facing the borrower. For this reason, P2P lending sites provide potential lenders with information about borrowers and their loan purpose. They also assign a grade to each loan. The empirical study is based on loans’ data collected from Lending Club (N = 24,449) from 2008 to 2014 that are first analyzed by using univariate means tests and survival analysis. Factors explaining default are loan purpose, annual income, current housing situation, credit history and indebtedness. Secondly, a logistic regression model is developed to predict defaults. The grade assigned by the P2P lending site is the most predictive factor of default, but the accuracy of the model is improved by adding other information, especially the borrower’s debt level. PMID:26425854

  17. Managing Linguistic Data Summaries in Advanced P2P Applications

    NASA Astrophysics Data System (ADS)

    Hayek, Rabab; Raschia, Guillaume; Valduriez, Patrick; Mouaddib, Noureddine

    As the amount of stored data increases, data localization techniques become no longer sufficient in P2P systems. A practical approach is to rely on compact database summaries rather than raw database records, whose access is costly in large P2P systems. In this chapter, we describe a solution for managing linguistic data summaries in advanced P2P applications which are dealing with semantically rich data. The produced summaries are synthetic, multidimensional views over relational tables. The novelty of this proposal relies on the double summary exploitation in distributed P2P systems. First, as semantic indexes, they support locating relevant nodes based on their data descriptions. Second, due to their intelligibility, these summaries can be directly queried and thus approximately answer a query without the need for exploring original data. The proposed solution consists first in defining a summary model for hierarchical P2P systems. Second, appropriate algorithms for summary creation and maintenance are presented. A query processing mechanism, which relies on summary querying, is then proposed to demonstrate the benefits that might be obtained from summary exploitation.

  18. Protecting Data Privacy in Structured P2P Networks

    NASA Astrophysics Data System (ADS)

    Jawad, Mohamed; Serrano-Alvarado, Patricia; Valduriez, Patrick

    P2P systems are increasingly used for efficient, scalable data sharing. Popular applications focus on massive file sharing. However, advanced applications such as online communities (e.g., medical or research communities) need to share private or sensitive data. Currently, in P2P systems, untrusted peers can easily violate data privacy by using data for malicious purposes (e.g., fraudulence, profiling). To prevent such behavior, the well accepted Hippocratic database principle states that data owners should specify the purpose for which their data will be collected. In this paper, we apply such principles as well as reputation techniques to support purpose and trust in structured P2P systems. Hippocratic databases enforce purpose-based privacy while reputation techniques guarantee trust. We propose a P2P data privacy model which combines the Hippocratic principles and the trust notions. We also present the algorithms of PriServ, a DHT-based P2P privacy service which supports this model and prevents data privacy violation. We show, in a performance evaluation, that PriServ introduces a small overhead.

  19. NMR study of heavy fermion compound EuNi2P2

    NASA Astrophysics Data System (ADS)

    Magishi, K.; Watanabe, R.; Hisada, A.; Saito, T.; Koyama, K.; Fujiwara, T.

    2015-03-01

    We report the results of 31P-nuclear magnetic resonance (NMR) measurements on heavy fermion compound EuNi2P2 in order to investigate the magnetic properties at low temperatures from a microscopic view point. The Knight shift has a negative value in an entire temperature range, and the absolute value increases with decreasing temperature but exhibits a broad maximum around 40 K, which is similar to the behavior of the magnetic susceptibility. Also, the nuclear spin-lattice relaxation rate 1/T1 is almost constant at high temperatures above 200 K, which is reminiscent of the relaxation mechanism dominated by the interaction of the 31P nucleus with fluctuating Eu-4f moments. Below 200 K, 1/T1 gradually decreases on cooling due to the change of the valence in the Eu ion. At low temperatures, 1/T1 does not obey the Korringa relation, in contrast to typical heavy fermion compounds. The nuclear spin-spin relaxation rate 1/T2 shows the similar behavior as 1/T1 at high temperatures. But, below 50 K, 1/T2 increases upon cooling due to the development of the magnetic excitation.

  20. Electronic structure and defect properties of selenophosphate Pb2P2Se6 for γ-ray detection

    NASA Astrophysics Data System (ADS)

    Kontsevoi, Oleg Y.; Im, Jino; Wessels, Bruce W.; Kanatzidis, Mercouri G.; Freeman, Arthur J.

    Heavy metal chalco-phosphate Pb2P2Se6 has shown a significant promise as an X-ray and γ-ray detector material. To assess the fundamental physical properties important for its performance as detector, theoretical calculations were performed for the electronic structure, band gaps, electron and hole effective masses, and static dielectric constants. The calculations were based on first-principles density functional theory (DFT) and employ the highly precise full potential linearized augmented plane wave method and the projector augmented wave method and include nonlocal exchange-correlation functionals to overcome the band gap underestimation in DFT calculations. The calculations show that Pb2P2Se6 is an indirect band gap material with the calculated band gap of 2.0 eV, has small effective masses, which could result in a good carrier mobility-lifetime product μτ , and a very high static dielectric constant, which could lead to high mobility of carriers by screening of charged scattering centers. We further investigated a large set of native defects in Pb2P2Se6 to determine the optimal growth conditions for application as γ-ray detectors. The results suggest that the prevalent intrinsic defects are selenium vacancies, followed by lead vacancies, then phosphorus vacancies and antisite defects. The effect of various chemical environments on defect properties was examined and the optimal conditions for material synthesis were suggested. Supported by DHS (Grant No. 2014-DN-077-ARI086-01).

  1. Character Disposition and Behavior Type: Influences of Valence on Preschool Children's Social Judgments

    ERIC Educational Resources Information Center

    Jones, Elaine F.; Tobias, Marvin; Pauley, Danielle; Thomson, Nicole Renick; Johnson, Shawana Lewis

    2009-01-01

    The authors studied the influences of valence information on preschool children's (n = 47) moral (good or bad), liking (liked or disliked by a friend), and consequence-of-behavior (reward or punishment) judgments. The authors presented 8 scenarios describing the behavior valence, positive valence (help, share), negative valence (verbal insult,…

  2. N(2P) in the dayglow - Measurement and theory

    NASA Technical Reports Server (NTRS)

    Torr, Marsha R.; Torr, Douglas G.; Richards, P. G.

    1993-01-01

    During the ATLAS-1 mission, the first dayglow altitude profiles were obtained of the N(2P) emission at 3466 A. These observations were made in the sunlit thermosphere using the Imaging Spectrometric Observatory. As all previous work on this emission has been done under auroral conditions, this study represents the first examination of the photochemical sources and sinks of N(2P) in the normal daytime thermospheric, with comparison with measurements. We find that the observations are explained by a model in which the major source is photodissociation of N2, and quenching by O is the principal low-altitude loss process, with radiative decay to N(2D) dominating above 200 km. As the dominant loss processes are likely to result in the production of N(2D), N(2P) could be a moderate source of N(2D) and may be a factor to be taken into consideration in modeling NO.

  3. Market Design for a P2P Backup System

    NASA Astrophysics Data System (ADS)

    Seuken, Sven; Charles, Denis; Chickering, Max; Puri, Sidd

    Peer-to-peer (P2P) backup systems are an attractive alternative to server-based systems because the immense costs of large data centers can be saved by using idle resources on millions of private computers instead. This paper presents the design and theoretical analysis of a market for a P2P backup system. While our long-term goal is an open resource exchange market using real money, here we consider a system where monetary transfers are prohibited. A user who wants to backup his data must in return supply some of his resources (storage space, upload and download bandwidth) to the system.We propose a hybrid P2P architecture where all backup data is transferred directly between peers, but a dedicated server coordinates all operations and maintains meta-data. We achieve high reliability guarantees while keeping our data replication factor low by adopting sophisticated erasure coding technology (cf., [2]).

  4. Fragrance material review on 2-(p-tolyloxy)ethyl acetate.

    PubMed

    McGinty, D; Letizia, C S; Api, A M

    2012-09-01

    A toxicologic and dermatologic review of 2-(p-tolyloxy)ethyl acetate when used as a fragrance ingredient is presented. 2-(p-tolyloxy)ethyl acetate is a member of the fragrance structural group aryl alkyl alcohol simple acid esters (AAASAE). The AAASAE fragrance ingredients are prepared by reacting an aryl alkyl alcohol with a simple carboxylic acid (a chain of 1-4 carbons) to generate formate, acetate, propionate, butyrate, isobutyrate and carbonate esters. This review contains a detailed summary of all available toxicology and dermatology papers that are related to this individual fragrance ingredient and is not intended as a stand-alone document. Available data for 2-(p-tolyloxy)ethyl acetate were evaluated, then summarized, and includes physical properties data. A safety assessment of the entire AAASAE will be published simultaneously with this document. Please refer to Belsito et al. (2012) for an overall assessment of the safe use of this material and all AAASAE in fragrances. PMID:22414652

  5. Taboo, emotionally valenced, and emotionally neutral word norms.

    PubMed

    Janschewitz, Kristin

    2008-11-01

    Although taboo words are used to study emotional memory and attention, no easily accessible normative data are available that compare taboo, emotionally valenced, and emotionally neutral words on the same scales. Frequency, inappropriateness, valence, arousal, and imageability ratings for taboo, emotionally valenced, and emotionally neutral words were made by 78 native-English-speaking college students from a large metropolitan university. The valenced set comprised both positive and negative words, and the emotionally neutral set comprised category-related and category-unrelated words. To account for influences of demand characteristics and personality factors on the ratings, frequency and inappropriateness measures were decomposed into raters' personal reactions to the words versus raters' perceptions of societal reactions to the words (personal use vs. familiarity and offensiveness vs. tabooness, respectively). Although all word sets were rated higher in familiarity and tabooness than in personal use and offensiveness, these differences were most pronounced for the taboo set. In terms of valence, the taboo set was most similar to the negative set, although it yielded higher arousal ratings than did either valenced set. Imageability for the taboo set was comparable to that of both valenced sets. The ratings of each word are presented for all participants as well as for single-sex groups. The inadequacies of the application of normative data to research that uses emotional words and the conceptualization of taboo words as a coherent category are discussed. Materials associated with this article may be accessed at the Psychonomic Society's Archive of Norms, Stimuli, and Data, www.psychonomic.org/archive. PMID:19001397

  6. Faraday effect in Sn2P2S6 crystals.

    PubMed

    Krupych, Oleh; Adamenko, Dmytro; Mys, Oksana; Grabar, Aleksandr; Vlokh, Rostyslav

    2008-11-10

    We have revealed a large Faraday rotation in tin thiohypodiphosphate (Sn(2)P(2)S(6)) crystals, which makes this material promising for magneto-optics. The effective Faraday tensor component and the Verdet constant for the direction of the optic axis have been determined by measuring the pure Faraday rotation in Sn(2)P(2)S(6) crystals with both the single-ray and small-angular polarimetric methods at the normal conditions and a wavelength of 632.8 nm. The effective Verdet constant is found to be equal to 115 rad/T x m. PMID:19002228

  7. Temperature-dependent internal photoemission probe for band parameters

    NASA Astrophysics Data System (ADS)

    Lao, Yan-Feng; Perera, A. G. Unil

    2012-11-01

    The temperature-dependent characteristic of band offsets at the heterojunction interface was studied by an internal photoemission (IPE) method. In contrast to the traditional Fowler method independent of the temperature (T), this method takes into account carrier thermalization and carrier/dopant-induced band-renormalization and band-tailing effects, and thus measures the band-offset parameter at different temperatures. Despite intensive studies in the past few decades, the T dependence of this key band parameter is still not well understood. Re-examining a p-type doped GaAs emitter/undoped AlxGa1-xAs barrier heterojunction system disclosed its previously ignored T dependency in the valence-band offset, with a variation up to ˜-10-4 eV/K in order to accommodate the difference in the T-dependent band gaps between GaAs and AlGaAs. Through determining the Fermi energy level (Ef), IPE is able to distinguish the impurity (IB) and valence bands (VB) of extrinsic semiconductors. One important example is to determine Ef of dilute magnetic semiconductors such as GaMnAs, and to understand whether it is in the IB or VB.

  8. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

    NASA Astrophysics Data System (ADS)

    Jia, Ye; Wallace, Joshua S.; Qin, Yueling; Gardella, Joseph A.; Dabiran, Amir M.; Singisetti, Uttam

    2016-04-01

    In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

  9. Theory of Valence Transition in BiNiO3

    NASA Astrophysics Data System (ADS)

    Naka, Makoto; Seo, Hitoshi; Motome, Yukitoshi

    2016-02-01

    Motivated by the colossal negative thermal expansion recently found in BiNiO3 , the valence transition accompanied by the charge transfer between the Bi and Ni sites is theoretically studied. We introduce an effective model for Bi -6 s and Ni -3 d orbitals taking into account the valence skipping of Bi cations, and investigate the ground-state and finite-temperature phase diagrams within the mean-field approximation. We find that the valence transition is caused by commensurate locking of the electron filling in each orbital associated with charge and magnetic orderings, and the critical temperature and the nature of the transitions are strongly affected by the relative energy between the Bi and Ni levels and the effective electron-electron interaction in the Bi sites. The obtained phase diagram well explains the temperature- and pressure-driven valence transitions in BiNiO3 and the systematic variation of valence states for a series of Bi and Pb perovskite oxides.

  10. Semantic memory: distinct neural representations for abstractness and valence.

    PubMed

    Skipper, Laura M; Olson, Ingrid R

    2014-03-01

    The hypothesis that abstract words are grounded in emotion has been supported by behavioral research and corpus studies of English words. A recent neuroimaging study reported that a single brain region, the rostral anterior cingulate cortex (rACC), is responsive to abstract words, and is furthermore modulated by the emotional valence. This finding is surprising because the rACC is not commonly associated with semantic processing. It is possible that the effects observed were driven not by abstractness, but rather by valence, since the abstract words used in that study were significantly more emotional than the concrete words. We tested this hypothesis by presenting participants with words that were abstract/concrete, as well as emotionally valenced/neutral in a 2×2 factorial design. Activations to emotional words overlapped with both abstract and concrete activations throughout the brain. An ROI analysis revealed that the rACC was responsive to valence, not abstractness, when concreteness and valence unconfounded. PMID:24561187

  11. Theory of Valence Transition in BiNiO_{3}.

    PubMed

    Naka, Makoto; Seo, Hitoshi; Motome, Yukitoshi

    2016-02-01

    Motivated by the colossal negative thermal expansion recently found in BiNiO_{3}, the valence transition accompanied by the charge transfer between the Bi and Ni sites is theoretically studied. We introduce an effective model for Bi-6s and Ni-3d orbitals taking into account the valence skipping of Bi cations, and investigate the ground-state and finite-temperature phase diagrams within the mean-field approximation. We find that the valence transition is caused by commensurate locking of the electron filling in each orbital associated with charge and magnetic orderings, and the critical temperature and the nature of the transitions are strongly affected by the relative energy between the Bi and Ni levels and the effective electron-electron interaction in the Bi sites. The obtained phase diagram well explains the temperature- and pressure-driven valence transitions in BiNiO_{3} and the systematic variation of valence states for a series of Bi and Pb perovskite oxides. PMID:26894723

  12. Measurement and analysis of P2P IPTV program resource.

    PubMed

    Wang, Wenxian; Chen, Xingshu; Wang, Haizhou; Zhang, Qi; Wang, Cheng

    2014-01-01

    With the rapid development of P2P technology, P2P IPTV applications have received more and more attention. And program resource distribution is very important to P2P IPTV applications. In order to collect IPTV program resources, a distributed multi-protocol crawler is proposed. And the crawler has collected more than 13 million pieces of information of IPTV programs from 2009 to 2012. In addition, the distribution of IPTV programs is independent and incompact, resulting in chaos of program names, which obstructs searching and organizing programs. Thus, we focus on characteristic analysis of program resources, including the distributions of length of program names, the entropy of the character types, and hierarchy depth of programs. These analyses reveal the disorderly naming conventions of P2P IPTV programs. The analysis results can help to purify and extract useful information from chaotic names for better retrieval and accelerate automatic sorting of program and establishment of IPTV repository. In order to represent popularity of programs and to predict user behavior and popularity of hot programs over a period, we also put forward an analytical model of hot programs. PMID:24772008

  13. MDM2-p53 Pathway in Hepatocellular Carcinoma

    PubMed Central

    Meng, Xuan; Franklin, Derek A; Dong, Jiahong; Zhang, Yanping

    2015-01-01

    Abnormalities in the TP53 gene and overexpression of MDM2, a transcriptional target and negative regulator of p53, are commonly observed in cancers. The MDM2-p53 feedback loop plays an important role in tumor progression and thus, increased understanding of the pathway has the potential to improve clinical outcomes for cancer patients. Hepatocellular carcinoma (HCC) has emerged as one of the most commonly diagnosed forms of human cancer; yet, the current treatment for HCC is less effective than those used against other cancers. We review the current studies of the MDM2-p53 pathway in cancer with a focus on HCC, and specifically discuss the impact of p53 mutations along with other alterations of the MDM2-p53 feedback loop in HCC. We also discuss the potential diagnostic and prognostic applications of p53 and MDM2 in malignant tumors as well as therapeutic avenues that are being developed to target the MDM2-p53 pathway. PMID:25477334

  14. Measurement and Analysis of P2P IPTV Program Resource

    PubMed Central

    Chen, Xingshu; Wang, Haizhou; Zhang, Qi

    2014-01-01

    With the rapid development of P2P technology, P2P IPTV applications have received more and more attention. And program resource distribution is very important to P2P IPTV applications. In order to collect IPTV program resources, a distributed multi-protocol crawler is proposed. And the crawler has collected more than 13 million pieces of information of IPTV programs from 2009 to 2012. In addition, the distribution of IPTV programs is independent and incompact, resulting in chaos of program names, which obstructs searching and organizing programs. Thus, we focus on characteristic analysis of program resources, including the distributions of length of program names, the entropy of the character types, and hierarchy depth of programs. These analyses reveal the disorderly naming conventions of P2P IPTV programs. The analysis results can help to purify and extract useful information from chaotic names for better retrieval and accelerate automatic sorting of program and establishment of IPTV repository. In order to represent popularity of programs and to predict user behavior and popularity of hot programs over a period, we also put forward an analytical model of hot programs. PMID:24772008

  15. Intermediate band solar cell with extreme broadband spectrum quantum efficiency.

    PubMed

    Datas, A; López, E; Ramiro, I; Antolín, E; Martí, A; Luque, A; Tamaki, R; Shoji, Y; Sogabe, T; Okada, Y

    2015-04-17

    We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ∼6000  nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidence indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable. PMID:25933339

  16. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  17. Nonequilibrium Green's function formulation of intersubband absorption for nonparabolic single-band effective mass Hamiltonian

    SciTech Connect

    Kolek, Andrzej

    2015-05-04

    The formulas are derived that enable calculations of intersubband absorption coefficient within nonequilibrium Green's function method applied to a single-band effective-mass Hamiltonian with the energy dependent effective mass. The derivation provides also the formulas for the virtual valence band components of the two-band Green's functions which can be used for more exact estimation of the density of states and electrons and more reliable treatment of electronic transport in unipolar n-type heterostructure semiconductor devices.

  18. The effect of object-valence relations on automatic evaluation.

    PubMed

    Moran, Tal; Bar-Anan, Yoav

    2013-01-01

    Two experiments tested the effect of co-occurrence of a target object with affective stimuli on automatic evaluation of the target when the relation between the target and the affective stimuli suggests that they have opposite valence. Participants learned about targets that ended an unpleasant noise or a pleasant music. The valence of such targets is opposite to the valence of the affective stimuli that co-occur with them. Participants reported preference for targets that ended noise over targets that ended music, but automatic evaluation measures revealed the opposite preference. This suggests that automatic evaluation is sensitive to co-occurrence between stimuli more than to the relation between the stimuli, and that relational information has a stronger influence on deliberate evaluation than on automatic evaluation. These conclusions support the associative-propositional evaluation model (Gawronski & Bodenhausen, 2006), and add evidence regarding the sensitivity of the evaluative-conditioning effect to relational information. PMID:23072334

  19. Valence Electronic Structure of Aqueous Solutions: Insights from Photoelectron Spectroscopy

    NASA Astrophysics Data System (ADS)

    Seidel, Robert; Winter, Bernd; Bradforth, Stephen E.

    2016-05-01

    The valence orbital electron binding energies of water and of embedded solutes are crucial quantities for understanding chemical reactions taking place in aqueous solution, including oxidation/reduction, transition-metal coordination, and radiation chemistry. Their experimental determination based on liquid-photoelectron spectroscopy using soft X-rays is described, and we provide an overview of valence photoelectron spectroscopy studies reported to date. We discuss principal experimental aspects and several theoretical approaches to compute the measured binding energies of the least tightly bound molecular orbitals. Solutes studied are presented chronologically, from simple electrolytes, via transition-metal ion solutions and several organic and inorganic molecules, to biologically relevant molecules, including aqueous nucleotides and their components. In addition to the lowest vertical ionization energies, the measured valence photoelectron spectra also provide information on adiabatic ionization energies and reorganization energies for the oxidation (ionization) half-reaction. For solutes with low solubility, resonantly enhanced ionization provides a promising alternative pathway.

  20. Valence Electronic Structure of Aqueous Solutions: Insights from Photoelectron Spectroscopy.

    PubMed

    Seidel, Robert; Winter, Bernd; Bradforth, Stephen E

    2016-05-27

    The valence orbital electron binding energies of water and of embedded solutes are crucial quantities for understanding chemical reactions taking place in aqueous solution, including oxidation/reduction, transition-metal coordination, and radiation chemistry. Their experimental determination based on liquid-photoelectron spectroscopy using soft X-rays is described, and we provide an overview of valence photoelectron spectroscopy studies reported to date. We discuss principal experimental aspects and several theoretical approaches to compute the measured binding energies of the least tightly bound molecular orbitals. Solutes studied are presented chronologically, from simple electrolytes, via transition-metal ion solutions and several organic and inorganic molecules, to biologically relevant molecules, including aqueous nucleotides and their components. In addition to the lowest vertical ionization energies, the measured valence photoelectron spectra also provide information on adiabatic ionization energies and reorganization energies for the oxidation (ionization) half-reaction. For solutes with low solubility, resonantly enhanced ionization provides a promising alternative pathway. PMID:27023757

  1. Dimensionality and its effects upon the valence electronic structure of ordered metallic systems

    SciTech Connect

    Tobin, J.G.

    1983-07-01

    The system c(10x2)Ag/Cu(001) was investigated with Angle-Resolved Photoemission (ARP), Low Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy (AES). LEED and AES provided the calibration of a quartz microbalance used to measure the amount of silver evaporated onto the copper single crystal and also established the monolayer geometrical structure at one monolayer exposure. An off-normal ARP bandmapping study performed with polarized HeI and NeI radiation demonstrated the electronically two-dimensional nature of the silver d-bands at coverages of near one monolayer. The states at the surface Brillouin Zone center were assigned upon the basis of their polarization dependences and a structural model of hexagonal symmetry. A normal emission ARP experiment was performed at the Stanford Synchrotron Radiation Laboratory (SSRL) over the photon energy range of 6 to 32 eV. Data from it documented the evolution of the valence electronic structure of the silver overlayer from a two-dimensional hexagonal valence to a three-dimensional behavior converging towards that of bulk Ag(111). A structural study was attempted using the ARP technique of Normal Emission Photoelectron Diffraction over the photon energy range of 3.4 to 3.7 keV at SSRL, the results of which are inconclusive.

  2. Bond-valence methods for pKa prediction. II. Bond-valence, electrostatic, molecular geometry, and solvation effects

    SciTech Connect

    Bickmore, Barry R.; Rosso, Kevin M.; Tadanier, Christopher J.; Bylaska, Eric J.; Doud, Darrin

    2006-08-15

    In a previous contribution, we outlined a method for predicting (hydr)oxy-acid and oxide surface acidity constants based on three main factors: bond valence, Me?O bond ionicity, and molecular shape. Here electrostatics calculations and ab initio molecular dynamics simulations are used to qualitatively show that Me?O bond ionicity controls the extent to which the electrostatic work of proton removal departs from ideality, bond valence controls the extent of solvation of individual functional groups, and bond valence and molecular shape controls local dielectric response. These results are consistent with our model of acidity, but completely at odds with other methods of predicting acidity constants for use in multisite complexation models. In particular, our ab initio molecular dynamics simulations of solvated monomers clearly indicate that hydrogen bonding between (hydr)oxo-groups and water molecules adjusts to obey the valence sum rule, rather than maintaining a fixed valence based on the coordination of the oxygen atom as predicted by the standard MUSIC model.

  3. Valence-differential spectroscopy of Co-Fe cyanide films

    NASA Astrophysics Data System (ADS)

    Moritomo, Y.; Nakada, F.; Kurihara, Y.

    2009-03-01

    Electrochromism is extensively investigated for practical application of display and memory devices. To develop the material, reliable information on the optical and electronic properties of the solid film is indispensable. Here, we propose valence-differential spectroscopy that can selectively extract the spectral components related to the oxidized/reduced metal site. We applied the spectroscopy to Co2+-Fe2+δ and Co2+δ-Fe2+ cyanide films with finely control of averaged valence (δ) of the transition metal by external electric pulses. The spectroscopy revealed transition energy E, width Γ, and oscillator strength f of the spectral components related to the transition metal.

  4. First-principles calculations of a promising intermediate-band photovoltaic material based on Co-hyperdoped crystalline silicon

    NASA Astrophysics Data System (ADS)

    Dong, Xiao; Song, Xiaohui; Wang, Yongyong; Wang, Jinfeng

    2015-08-01

    Among the various atomic structures of Co doped in the Si lattice, the substitutional Co is the most stable structure and can cause an impurity band in the band gap of crystalline Si. The impurity band is partially filled by electrons and isolated from the valence band (VB) and conduction band (CB), which fulfills the conditions of an intermediate-band (IB) photovoltaic material. The dielectric constant indicates that the substitutional Co-doped Si material can cause sub-band-gap light absorption. These properties will make the Co-hyperdoped Si a promising IB material in photovoltaic fields.

  5. K2P potassium channels, mysterious and paradoxically exciting.

    PubMed

    Goldstein, Steve A N

    2011-08-01

    New evidence reveals that the common electrolyte disorder hypokalemia can induce K2P1 channels that are normally selective for K+ to break the rules and conduct Na+. This defiant behavior leads to paradoxical depolarization of many cells in the heart, increasing the risk for lethal arrhythmia. The new research resolves a mystery uncovered 50 years ago and bestows an array of new riddles. Here, I discuss how K2P1 might achieve this alchemy--through stable residence of the K+ selectivity filter in a Na+-conductive state between its open and C-inactive configurations--and predict that other K+ channels and environmental stimuli will be discovered to produce the same excitatory misconduct. PMID:21868351

  6. Supporting seamless mobility for P2P live streaming.

    PubMed

    Kim, Eunsam; Kim, Sangjin; Lee, Choonhwa

    2014-01-01

    With advent of various mobile devices with powerful networking and computing capabilities, the users' demand to enjoy live video streaming services such as IPTV with mobile devices has been increasing rapidly. However, it is challenging to get over the degradation of service quality due to data loss caused by the handover. Although many handover schemes were proposed at protocol layers below the application layer, they inherently suffer from data loss while the network is being disconnected during the handover. We therefore propose an efficient application-layer handover scheme to support seamless mobility for P2P live streaming. By simulation experiments, we show that the P2P live streaming system with our proposed handover scheme can improve the playback continuity significantly compared to that without our scheme. PMID:24977171

  7. Supporting Seamless Mobility for P2P Live Streaming

    PubMed Central

    Kim, Eunsam; Kim, Sangjin; Lee, Choonhwa

    2014-01-01

    With advent of various mobile devices with powerful networking and computing capabilities, the users' demand to enjoy live video streaming services such as IPTV with mobile devices has been increasing rapidly. However, it is challenging to get over the degradation of service quality due to data loss caused by the handover. Although many handover schemes were proposed at protocol layers below the application layer, they inherently suffer from data loss while the network is being disconnected during the handover. We therefore propose an efficient application-layer handover scheme to support seamless mobility for P2P live streaming. By simulation experiments, we show that the P2P live streaming system with our proposed handover scheme can improve the playback continuity significantly compared to that without our scheme. PMID:24977171

  8. Compounds with mixed and intermediate sulfur valences in pyrite from the Amelia Mine, Southwest Wisconsin

    NASA Astrophysics Data System (ADS)

    Kucha, H.; Barnes, H. L.

    1995-02-01

    Compounds with mixed and intermediate sulfur valences form cloudy small inclusions in banded pyrite and 2 4 mm large rounded aggregates in pyrite stalactites. Such areas under high magnification of SEM appear to be a mixture of FeS2 with FeS2O3. Some of the microareas of 40 50 μm are homogeneous and can be identified by reflected light microscopy, microprobe and soft X-ray spectroscopy as Fe-thiosulphate, FeS2O3 or (Fe, Pb)2S3O7 with this compound having one sulfur -2 and two sulfurs +6. The intermediate sulfur compounds are enriched in Pb, Ni, Co and As.

  9. The determination of dopant ion valence distributions in insulating crystals using XANES measurements.

    PubMed

    Hughes-Currie, Rosa B; Ivanovskikh, Konstantin V; R Wells, Jon-Paul; Reid, Michael F; Gordon, Robert A

    2016-04-01

    Ytterbium-doped wide-bandgap fluoride crystals CaF2, SrF2 and NaMgF3 have been measured using x-ray absorption near edge structure (XANES) on the L3 edge to determine the ratio of trivalent to divalent Yb ions present in the crystals. This study improves upon previous XANES measurements of dopant ion valency by taking into account the x-ray emission transition probabilities for the divalent and trivalent species instead of simply assuming that the relative concentrations may be determined by the ratio of the x-ray excitation band areas. Trivalent to divalent ratios as high as 5 are inferred even at low total dopant ion concentrations of 0.05 mol% Yb. PMID:26941175

  10. The determination of dopant ion valence distributions in insulating crystals using XANES measurements

    NASA Astrophysics Data System (ADS)

    Hughes-Currie, Rosa B.; Ivanovskikh, Konstantin V.; Wells, Jon-Paul R.; Reid, Michael F.; Gordon, Robert A.

    2016-04-01

    Ytterbium-doped wide-bandgap fluoride crystals CaF2, SrF2 and NaMgF3 have been measured using x-ray absorption near edge structure (XANES) on the L3 edge to determine the ratio of trivalent to divalent Yb ions present in the crystals. This study improves upon previous XANES measurements of dopant ion valency by taking into account the x-ray emission transition probabilities for the divalent and trivalent species instead of simply assuming that the relative concentrations may be determined by the ratio of the x-ray excitation band areas. Trivalent to divalent ratios as high as 5 are inferred even at low total dopant ion concentrations of 0.05 mol% Yb.

  11. An Overlapping Structured P2P for REIK Overlay Network

    NASA Astrophysics Data System (ADS)

    Liu, Wenjun; Song, Jingjing; Yu, Jiguo

    REIK is based on a ring which embedded an inverse Kautz digraph, to enable multi-path P2P routing. It has the constant degree and the logarithmic diameter DHT scheme with constant congestion and Byzantine fault tolerance. However, REIK did not consider the interconnection of many independent smaller networks. In this paper, we propose a new approach to build overlay network, OLS-REIK which is an overlapping structured P2P for REIK overlay network. It is a more flexible interconnecting different REIK network. Peers can belong to several rings, allowing this interconnection. By connecting smaller structured overlay networks in an unstructured way, it provides a cost effective alternative to hierarchical structured P2P systems requiring costly merging. Routing of lookup messages is performed as in REIK within one ring, but a peer belonging to several rings forwards the request to the different rings it belongs to. Furthermore a small number of across point is enough to ensure a high exhaustiveness level.

  12. Pure P2P mediation system: A mappings discovery approach

    NASA Astrophysics Data System (ADS)

    selma, El yahyaoui El idrissi; Zellou, Ahmed; Idri, Ali

    2015-02-01

    The information integration systems consist in offering a uniform interface to provide access to a set of autonomous and distributed information sources. The most important advantage of this system is that it allows users to specify what they want, rather than thinking about how to get the responses. The works realized in this area have particular leads to two major classes of integration systems: the mediation systems based on the paradigm mediator / adapter and peer to peer systems (P2P). The combination of both systems has led to a third type; is the mediation P2P systems. The P2P systems are large-scale systems, self-organized and distributed. They allow the resource management in a completely decentralized way. However, the integration of structured information sources, heterogeneous and distributed proves to be a complex problem. The objective of this work is to propose an approach to resolve conflicts and establish a mapping between the heterogeneous elements. This approach is based on clustering; the latter is to group similar Peers that share common information in the same subnet. Thus, to facilitate the heterogeneity, we introduced three additional layers of our hierarchy of peers: internal schema, external schema and Schema directory peer. We used linguistic techniques, and precisely the name correspondence technique, that is based on the similarity of names to propose a correspondence.

  13. Load Balancing in Structured P2P Networks

    NASA Astrophysics Data System (ADS)

    Zhu, Yingwu

    In this chapter we start by addressing the importance and necessity of load balancing in structured P2P networks, due to three main reasons. First, structured P2P networks assume uniform peer capacities while peer capacities are heterogeneous in deployed P2P networks. Second, resorting to pseudo-uniformity of the hash function used to generate node IDs and data item keys leads to imbalanced overlay address space and item distribution. Lastly, placement of data items cannot be randomized in some applications (e.g., range searching). We then present an overview of load aggregation and dissemination techniques that are required by many load balancing algorithms. Two techniques are discussed including tree structure-based approach and gossip-based approach. They make different tradeoffs between estimate/aggregate accuracy and failure resilience. To address the issue of load imbalance, three main solutions are described: virtual server-based approach, power of two choices, and address-space and item balancing. While different in their designs, they all aim to improve balance on the address space and data item distribution. As a case study, the chapter discusses a virtual server-based load balancing algorithm that strives to ensure fair load distribution among nodes and minimize load balancing cost in bandwidth. Finally, the chapter concludes with future research and a summary.

  14. DNA Compaction by Yeast Mitochondrial Protein ABF2p

    SciTech Connect

    Friddle, R W; Klare, J E; Noy, A; Corzett, M; Balhorn, R; Baskin, R J; Martin, S S; Baldwin, E P

    2003-05-09

    We used high resolution Atomic Force Microscopy (AFM) to image compaction of linear and circular DNA by the yeast mitochondrial protein ABF2p , which plays a major role in maintaining mitochondrial DNA. AFM images show that protein binding induces drastic bends in the DNA backbone for both linear and circular DNA. At high concentration of ABF2p DNA collapses into a tight globular structure. We quantified the compaction of linear DNA by measuring the end-to-end distance of the DNA molecule at increasing concentrations of ABF2p. We also derived a polymer statistical mechanics model that gives quantitative description of compaction observed in our experiments. This model shows that a number of sharp bends in the DNA backbone is often sufficient to cause DNA compaction. Comparison of our model with the experimental data showed excellent quantitative correlation and allowed us to determine binding characteristics for ABF2. Our studies indicate that ABF2 compacts DNA through a novel mechanism that involves bending of DNA backbone. We discuss the implications of such a mechanism for mitochondrial DNA maintenance.

  15. Protected Fe valence in quasi-two-dimensional α-FeSi2.

    PubMed

    Miiller, W; Tomczak, J M; Simonson, J W; Smith, G; Kotliar, G; Aronson, M C

    2015-05-01

    We report the first comprehensive study of the high temperature form (α-phase) of iron disilicide. Measurements of the magnetic susceptibility, magnetization, heat capacity and resistivity were performed on well characterized single crystals. With a nominal iron d(6) configuration and a quasi-two-dimensional crystal structure that strongly resembles that of LiFeAs, α-FeSi2 is a potential candidate for unconventional superconductivity. Akin to LiFeAs, α-FeSi2 does not develop any magnetic order and we confirm its metallic state down to the lowest temperatures (T = 1.8 K). However, our experiments reveal that paramagnetism and electronic correlation effects in α-FeSi2 are considerably weaker than in the pnictides. Band theory calculations yield small Sommerfeld coefficients of the electronic specific heat γ = Ce/T that are in excellent agreement with experiment. Additionally, realistic many-body calculations further corroborate that quasi-particle mass enhancements are only modest in α-FeSi2. Remarkably, we find that the natural tendency to vacancy formation in the iron sublattice has little influence on the iron valence and the density of states at the Fermi level. Moreover, Mn doping does not significantly change the electronic state of the Fe ion. This suggests that the iron valence is protected against hole doping and indeed the substitution of Co for Fe causes a rigid-band like response of the electronic properties. As a key difference from the pnictides, we identify the smaller inter-iron layer spacing, which causes the active orbitals near the Fermi level to be of a different symmetry in α-FeSi2. This change in orbital character might be responsible for the lack of superconductivity in this system, providing constraints on pairing theories in the iron based pnictides and chalcogenides. PMID:25837013

  16. Protected Fe valence in quasi-two-dimensional α-FeSi2

    NASA Astrophysics Data System (ADS)

    Miiller, W.; Tomczak, J. M.; Simonson, J. W.; Smith, G.; Kotliar, G.; Aronson, M. C.

    2015-05-01

    We report the first comprehensive study of the high temperature form (α-phase) of iron disilicide. Measurements of the magnetic susceptibility, magnetization, heat capacity and resistivity were performed on well characterized single crystals. With a nominal iron d6 configuration and a quasi-two-dimensional crystal structure that strongly resembles that of LiFeAs, α-FeSi2 is a potential candidate for unconventional superconductivity. Akin to LiFeAs, α-FeSi2 does not develop any magnetic order and we confirm its metallic state down to the lowest temperatures (T = 1.8 K). However, our experiments reveal that paramagnetism and electronic correlation effects in α-FeSi2 are considerably weaker than in the pnictides. Band theory calculations yield small Sommerfeld coefficients of the electronic specific heat γ = Ce/T that are in excellent agreement with experiment. Additionally, realistic many-body calculations further corroborate that quasi-particle mass enhancements are only modest in α-FeSi2. Remarkably, we find that the natural tendency to vacancy formation in the iron sublattice has little influence on the iron valence and the density of states at the Fermi level. Moreover, Mn doping does not significantly change the electronic state of the Fe ion. This suggests that the iron valence is protected against hole doping and indeed the substitution of Co for Fe causes a rigid-band like response of the electronic properties. As a key difference from the pnictides, we identify the smaller inter-iron layer spacing, which causes the active orbitals near the Fermi level to be of a different symmetry in α-FeSi2. This change in orbital character might be responsible for the lack of superconductivity in this system, providing constraints on pairing theories in the iron based pnictides and chalcogenides.

  17. De Haas-van Alphen Effect and Fermi Surface Properties in Ferromagnet LaCo2P2 and Related Compounds

    NASA Astrophysics Data System (ADS)

    Teruya, Atsushi; Nakamura, Ai; Takeuchi, Tetsuya; Honda, Fuminori; Aoki, Dai; Harima, Hisatomo; Uchima, Kiyoharu; Hedo, Msato; Nakama, Takao; Ōnuki, Yoshichika

    We grew single crystals of a ferromagnet LaCo2P2 and an antiferromagnet CaCo2P2, and clarified the magnetic properties by measuring the electrical resistivity, specific heat, magnetic susceptibility, and magnetization. For LaCo2P2, we also carried out the de Haas-van Alphen (dHvA) experiment. Detected dHvA branches are well explained by the results of energy band calculations using a full-potential linearized augmented plane wave method within the local spin density approximation, where the ferromagnetic state is assumed. The cyclotron effective masses are (2-3)m0 (m0: rest mass of an electron). The present relatively large cyclotron masses in LaCo2P2 are due to ferromagnetic correlations of Co-3d conduction electrons, which are compared with much larger cyclotron masses of (3-7)m0 for a nearly ferromagnet SrCo2P2.

  18. Photofragmentation of a DNA nucleoside thymidine; valence- vs. core ionization

    NASA Astrophysics Data System (ADS)

    Itälä, E.; Kooser, K.; Hägerth, T.; Rachlew, E.; Huels, M. A.; Kukk, E.

    2012-11-01

    The photofragmentation of free thymidine molecule has been studied using combined electron- and ion spectroscopy. The results show that valence- and core ionization processes produce very different fragmentation patterns and that regardless of the photon energy, the photoionization leads almost always to dissociation of the thymidine molecule.

  19. Emotional Valence and Arousal Effects on Memory and Hemispheric Asymmetries

    ERIC Educational Resources Information Center

    Mneimne, Malek; Powers, Alice S.; Walton, Kate E.; Kosson, David S.; Fonda, Samantha; Simonetti, Jessica

    2010-01-01

    This study examined predictions based upon the right hemisphere (RH) model, the valence-arousal model, and a recently proposed integrated model (Killgore & Yurgelun-Todd, 2007) of emotion processing by testing immediate recall and recognition memory for positive, negative, and neutral verbal stimuli among 35 right-handed women. Building upon…

  20. Social Learning Modulates the Lateralization of Emotional Valence

    ERIC Educational Resources Information Center

    Shamay-Tsoory, Simone G.; Lavidor, Michal; Aharon-Peretz, Judith

    2008-01-01

    Although neuropsychological studies of lateralization of emotion have emphasized valence (positive vs. negative) or type (basic vs. complex) dimensions, the interaction between the two dimensions has yet to be elucidated. The purpose of the current study was to test the hypothesis that recognition of basic emotions is processed preferentially by…

  1. Recognizing the Emotional Valence of Names: An ERP Study

    ERIC Educational Resources Information Center

    Wang, Lin; Zhu, Zude; Bastiaansen, Marcel; Hagoort, Peter; Yang, Yufang

    2013-01-01

    Unlike common nouns, person names refer to unique entities and generally have a referring function. We used event-related potentials to investigate the time course of identifying the emotional meaning of nouns and names. The emotional valence of names and nouns were manipulated separately. The results show early N1 effects in response to emotional…

  2. Valence, Covalence, Hypervalence, Oxidation State, and Coordination Number

    ERIC Educational Resources Information Center

    Smith, Derek W.

    2005-01-01

    Valence as a numerical measure of an atom's combining power, expressed by the number of bonds it forms in a molecular formulation of the compound in question, was unable to cope with coordination compounds. The covalence of an atom is the nearest model equivalent, but is subject to ambiguity since it often depends on which bonding model is being…

  3. Effective valence proton numbers for nuclei with Z˜64

    NASA Astrophysics Data System (ADS)

    Fu, G. J.; Jiang, H.; Zhao, Y. M.; Arima, A.

    2011-09-01

    The subshell effect for nuclei with proton number Z˜ 64 has been known for many years. The most economic way to consider this effect is to use the effective valence proton number. In this Brief Report we extract effective valence proton numbers for nuclei in this region by using the systematics of the first 2+ energies (E21+) of even-even nuclei, the ratios of the first 4+ and 6+ state energies with respect to E21+ (R4 and R6), the B(E2) values, the quadrupole deformation parameters e2, and anomalous g factors of the 21+ state for even-even nuclei. It is noticed that these physical quantities saturate when NpNn, the product of the valence proton number and the valence neutron number, is large enough; on the other hand, they go to saturation at different “speeds.” We show that the subshell effect is more evident for E21+ and yrast state energy ratios (R4 and R6), and relatively less for other quantities.

  4. Tagging Multiple Emotional Stimuli: Negative Valence Has Little Benefit

    ERIC Educational Resources Information Center

    Watson, Derrick G.; Blagrove, Elisabeth

    2012-01-01

    Six experiments examined the influence of emotional valence on the tagging and enumeration of multiple targets. Experiments 1, 5 and 6 found that there was no difference in the efficiency of tagging/enumerating multiple negative or positive stimuli. Experiment 2 showed that, when neutral-expression face distractors were present, enumerating…

  5. Vection Modulates Emotional Valence of Autobiographical Episodic Memories

    ERIC Educational Resources Information Center

    Seno, Takeharu; Kawabe, Takahiro; Ito, Hiroyuki; Sunaga, Shoji

    2013-01-01

    We examined whether illusory self-motion perception ("vection") induced by viewing upward and downward grating motion stimuli can alter the emotional valence of recollected autobiographical episodic memories. We found that participants recollected positive episodes more often while perceiving upward vection. However, when we tested a small moving…

  6. Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces

    NASA Astrophysics Data System (ADS)

    Wang, S. J.; Huan, A. C. H.; Foo, Y. L.; Chai, J. W.; Pan, J. S.; Li, Q.; Dong, Y. F.; Feng, Y. P.; Ong, C. K.

    2004-11-01

    The energy-band alignments for the ZrO2/Si, ZrO2/Si0.75Ge0.25, and ZrO2/Ge interfaces have been studied using x-ray photoemission. The valence-band offsets of ZrO2/Si, ZrO2/Si0.75Ge0.25, and ZrO2/Ge interfaces are determined to be 2.95, 3.13, and 3.36eV, respectively, while the conduction-band offsets are found to be the same value of 1.76±0.03eV for three interfaces. The upward shift of valence-band top accounts for the difference in the energy-band alignment at three interfaces.

  7. Strongly nonparabolic variation of the band gap in In x Al1‑x N with low indium content

    NASA Astrophysics Data System (ADS)

    Zubialevich, Vitaly Z.; Dinh, Duc V.; Alam, Shahab N.; Schulz, Stefan; O’Reilly, Eoin P.; Parbrook, Peter J.

    2016-02-01

    80–120 nm thick In x Al1‑x N epitaxial layers with 0 < x < 0.224 were grown by metalorganic vapour phase epitaxy on AlN/Al2O3-templates. The composition was varied through control of the growth temperature. The composition dependence of the band gap was estimated from the photoluminescence excitation absorption edge for 0 < x < 0.11 as the material with higher In content showed no luminescence under low excitation. A very rapid decrease in band gap was observed in this range, dropping down below 5.2 eV at x = 0.05, confirming previous theoretical work that used a band-anticrossing model to describe the strongly x-dependent bowing parameter, which in this case exceeds 25 eV in the x → 0 limit. A double absorption edge observed for InAlN with x < 0.01 was attributed to crystal-field splitting of the highest valence band states. Our results indicate also that the ordering of the valence bands is changed at much lower In contents than one would expect from linear interpolation of the valence band parameters. These findings on band gap bowing and valence band ordering are of direct relevance for the design of InAlN-containing optoelectronic devices.

  8. Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P

    NASA Astrophysics Data System (ADS)

    Chen, K.-W.; Das, S.; Rhodes, D.; Memaran, S.; Besara, T.; Siegrist, T.; Manousakis, E.; Balicas, L.; Baumbach, R. E.

    2016-04-01

    Results are reported for single crystal specimens of Hf2Te2P and compared to its structural analogue Zr2Te2P, which was recently proposed to be a potential reservoir for Dirac physics [1]. Both materials are produced using the iodine vapor phase transport method and the resulting crystals are exfoliable. The bulk electrical transport and thermodynamic properties indicate Fermi liquid behavior at low temperature for both compounds. Quantum oscillations are observed in magnetization measurements for fields applied parallel but not perpendicular to the c-axis, suggesting that the Fermi surfaces are quasi-two dimensional. Frequencies are determined from quantum oscillations for several parts of the Fermi surfaces. Lifshitz-Kosevich fits to the temperature dependent amplitudes of the oscillations reveal small effective masses, with a particularly small value {{m}\\ast}=0.046{{m}0} for the α branch of Zr2Te2P. Electronic structure calculations are in good agreement with quantum oscillation results and illustrate the effect of a stronger spin-orbit interaction going from Zr to Hf. These results suggest that by using appropriate tuning parameters this class of materials may deepen the pool of novel Dirac phenomena.

  9. Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P.

    PubMed

    Chen, K-W; Das, S; Rhodes, D; Memaran, S; Besara, T; Siegrist, T; Manousakis, E; Balicas, L; Baumbach, R E

    2016-04-13

    Results are reported for single crystal specimens of Hf2Te2P and compared to its structural analogue Zr2Te2P, which was recently proposed to be a potential reservoir for Dirac physics [1]. Both materials are produced using the iodine vapor phase transport method and the resulting crystals are exfoliable. The bulk electrical transport and thermodynamic properties indicate Fermi liquid behavior at low temperature for both compounds. Quantum oscillations are observed in magnetization measurements for fields applied parallel but not perpendicular to the c-axis, suggesting that the Fermi surfaces are quasi-two dimensional. Frequencies are determined from quantum oscillations for several parts of the Fermi surfaces. Lifshitz-Kosevich fits to the temperature dependent amplitudes of the oscillations reveal small effective masses, with a particularly small value [Formula: see text] for the α branch of Zr2Te2P. Electronic structure calculations are in good agreement with quantum oscillation results and illustrate the effect of a stronger spin-orbit interaction going from Zr to Hf. These results suggest that by using appropriate tuning parameters this class of materials may deepen the pool of novel Dirac phenomena. PMID:26953683

  10. Intruder bands in ({ital Z}=53) {sup 113}I: Band termination interpretation

    SciTech Connect

    Waring, M.P.; Paul, E.S.; Beausang, C.W.; Clark, R.M.; Cunningham, R.A.; Davinson, T.; Forbes, S.A.; Fossan, D.B.; Gale, S.J.; Gizon, A.; Gizon, J.; Hauschild, K.; Hibbert, I.M.; James, A.N.; Jones, P.M.; Joyce, M.J.; LaFosse, D.R.; Page, R.D.; Ragnarsson, I.; Schnare, H.; Sellin, P.J.; Simpson, J.; Vaska, P.; Wadsworth, R.; Woods, P.J. ||||||

    1995-05-01

    High spin states in {sup 113}I were studied with the {sup 58}Ni({sup 58}Ni, 3{ital p}{gamma}) reaction at 240 MeV, using the EUROGAM array in Daresbury, United Kingdom, with 45 Ge detectors. A total of five deformed intruder bands extending to spins {ital I} ranging from (73/2--89/2){h_bar} have been identified, all of which reach frequencies {h_bar}{omega}{gt}1.0 MeV and excitation energies {similar_to}25 MeV. A gradual dropoff of the dynamic moment of inertia {ital scrI}{sup (2)} with increasing rotational frequency has been observed and attributed to a mode of ``soft`` band termination involving valence particle alignment. In this process, the nucleus progresses gradually, over many transitions, towards a noncollective oblate ({gamma}=+60{degree}) band terminating state.

  11. Band-Gap and Band-Edge Engineering of Multicomponent Garnet Scintillators from First Principles

    NASA Astrophysics Data System (ADS)

    Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; Jiang, Chao; Stanek, Christopher R.

    2015-11-01

    Complex doping schemes in R3 Al5 O12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimum (CBM) or valence-band maximum (VBM). We consider two sets of compositions based on Lu3 B5O12 where B is Al, Ga, In, As, and Sb, and R3Al5 O12 , where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. This approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.

  12. Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Ramdas, A.; Su, Ching-Hua; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between

  13. Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

    2001-01-01

    Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(sub x)V(sub 1-x) alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(sub x)V(sub 1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(sub x)Te(sub 1-x) and ZnSe(sub y)Te(sub 1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(sub y)Te(sub 1-y) alloys in the entire composition range, y between 0 and 1. The samples used in this study are bulk ZnSe(sub y)Te(sub 1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the

  14. Photodissociation of carbon dioxide in singlet valence electronic states. II. Five state absorption spectrum and vibronic assignment

    NASA Astrophysics Data System (ADS)

    Grebenshchikov, Sergy Yu.

    2013-06-01

    The absorption spectrum of CO2 in the wavelength range 120-160 nm is analyzed by means of quantum mechanical calculations performed using vibronically coupled potential energy surfaces of five singlet valence electronic states and the coordinate dependent transition dipole moment vectors. The thermally averaged spectrum, calculated for T = 190 K via Boltzmann averaging of optical transitions from many initial rotational states, accurately reproduces the experimental spectral envelope, consisting of a low and a high energy band, the positions of the absorption maxima, their FWHMs, peak intensities, and frequencies of diffuse structures in each band. Contributions of the vibronic interactions due to Renner-Teller coupling, conical intersections, and the Herzberg-Teller effect are isolated and the calculated bands are assigned in terms of adiabatic electronic states. Finally, diffuse structures in the calculated bands are vibronically assigned using wave functions of the underlying resonance states. It is demonstrated that the main progressions in the high energy band correspond to consecutive excitations of the pseudorotational motion along the closed loop of the CI seam, and progressions differ in the number of nodes along the radial mode perpendicular to the closed seam. Irregularity of the diffuse peaks in the low energy band is interpreted as a manifestation of the carbene-type "cyclic" OCO minimum.

  15. Increasing efficiency in intermediate band solar cells with overlapping absorptions

    NASA Astrophysics Data System (ADS)

    Krishna, Akshay; Krich, Jacob J.

    2016-07-01

    Intermediate band (IB) materials are promising candidates for realizing high efficiency solar cells. In IB photovoltaics, photons are absorbed in one of three possible electronic transitions—valence to conduction band, valence to intermediate band, or intermediate to conduction band. With fully concentrated sunlight, when the band gaps have been chosen appropriately, the highest efficiency IB solar cells require that these three absorptions be non-overlapping, so absorbed photons of fixed energy contribute to only one transition. The realistic case of overlapping absorptions, where the transitions compete for photons, is generally considered to be a source of loss. We show that overlapping absorptions can in fact lead to significant improvements in IB solar cell efficiencies, especially for IB that are near the middle of the band gap. At low to moderate concentration, the highest efficiency requires overlapping absorptions. We use the detailed-balance method and indicate how much overlap of the absorptions is required to achieve efficiency improvements, comparing with some known cases. These results substantially broaden the set of materials that can be suitable for high-efficiency IB solar cells.

  16. Dual doped monolayer and bilayer graphene: The case of 4p and 2p elements

    NASA Astrophysics Data System (ADS)

    Denis, Pablo A.; Iribarne, Federico

    2016-08-01

    4p/2p dual-doped monolayer and bilayer graphene were studied via first principle calculations. Generally, dopants prefer to be agglomerated. A second dopant significantly reduces formation energies. Thus, partially reduced graphene oxide would favor substitutional doping by facilitating the introduction of the 4p dopants. Dual-doping can tune the band gap from 0.1 to 0.8 eV. For bilayer graphene, large atomic radii elements (Gallium and Germanium) form interlayer bonds with the undoped sheet. For some dual-doped graphenes, interlayer GaC and GeC bonds were formed, increasing the chemical reactivity of the undoped layer and affecting its electronic structure, with metallic or semiconducting characters observed.

  17. Theoretical study of valence photoelectron spectrum of OsO4: A spin-orbit RESC-CASPT2 study

    NASA Astrophysics Data System (ADS)

    Nakajima, Takahito; Koga, Katsumichi; Hirao, Kimihiko

    2000-06-01

    The valence photoelectron spectrum (bands from A to E) of OsO4 is studied by second-order complete active space perturbation theory (CASPT2). The relativistic effects are included by the relativistic elimination of the small components (RESC) scheme. Spin-orbit coupling is also considered. Both the electron correlation and relativistic effects are significant on the peak position and intensity of valence photoelectron spectrum of OsO4. RESC-CASPT2 gives values for the peak position and intensity in reasonable agreement with the resolved photoelectron spectrum data. The state ordering is predicted as 2T1(1t1)>2T2(3t2)>2A1(2a1)>2T2(2t2)>2E2(1e). Electron correlation shifts all peak positions by 2.5-3.5 eV to the high-energy side. Spin-free relativistic effects shift the band D by 0.8 eV again to the high-energy side due to the stabilization of Os 6s orbital. The present study confirms that the band C arises from the spin-orbit coupling in the ionic 2T2(3t2) state. Under the E band, there are many two-electron shake-up peaks in addition to the two one-electron ionization peaks. The broad feature of the E band is due to the satellite peaks and can be well explained through the introduction of the relativistic effects.

  18. Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell.

    PubMed

    Martí, A; Antolín, E; Stanley, C R; Farmer, C D; López, N; Díaz, P; Cánovas, E; Linares, P G; Luque, A

    2006-12-15

    We present intermediate-band solar cells manufactured using quantum dot technology that show for the first time the production of photocurrent when two sub-band-gap energy photons are absorbed simultaneously. One photon produces an optical transition from the intermediate-band to the conduction band while the second pumps an electron from the valence band to the intermediate-band. The detection of this two-photon absorption process is essential to verify the principles of operation of the intermediate-band solar cell. The phenomenon is the cornerstone physical principle that ultimately allows the production of photocurrent in a solar cell by below band gap photon absorption, without degradation of its output voltage. PMID:17280325

  19. Highly Mismatched Alloys for Intermediate Band Solar Cells

    SciTech Connect

    Walukiewicz, W.; Yu, K.M.; Wu, J.; Ager III, J.W.; Shan, W.; Scrapulla, M.A.; Dubon, O.D.; Becla, P.

    2005-03-21

    It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.

  20. Affinity Purification and Characterization of a G-Protein Coupled Receptor, Saccharomyces cerevisiae Ste2p

    SciTech Connect

    Lee, Byung-Kwon; Jung, Kyung-Sik; Son, Cagdas D; Kim, Heejung; Verberkmoes, Nathan C; Arshava, Boris; Naider, Fred; Becker, Jeffrey Marvin

    2007-01-01

    We present a rare example of a biologically active G protein coupled receptor (GPCR) whose purity and identity were verified by mass spectrometry after being purified to near homogeneity from its native system. An overexpression vector was constructed to encode the Saccharomyces cerevisiae GPCR -factor receptor (Ste2p, the STE2 gene product) containing a 9-amino acid sequence of rhodopsin that served as an epitope/affinity tag. In the construct, two glycosylation sites and two cysteine residues were removed to aid future structural and functional studies. The receptor was expressed in yeast cells and was detected as a single band in a western blot indicating the absence of glycosylation. Tests of the epitope-tagged, mutated receptor showed it maintained its full biological activity. For extraction of Ste2p, yeast membranes were solubilized with 0.5 % n-dodecyl maltoside (DM). Approximately 120 g of purified -factor receptor was obtained per liter of culture by single-step affinity chromatography using a monoclonal antibody to the rhodopsin epitope. The binding affinity (Kd) of the purified -factor receptor in DM micelles was 28 nM as compared to Kd = 12.7 nM for Ste2p in cell membranes, and approximately 40 % of the purified receptor was correctly folded as judged by ligand saturation binding. About 50 % of the receptor sequence was retrieved from MALDITOF and nanospray mass spectrometry after CNBr digestion of the purified receptor. The methods described will enable structural studies of the -factor receptor and may provide an efficient technique to purify other GPCRs that have been functionally expressed in yeast.

  1. Interstitial microduplication at 2p11.2 in a patient with syndromic intellectual disability: 30-year follow-up

    PubMed Central

    2014-01-01

    Background Copy number variations at 2p11.2 have been rare and to our knowledge, no abnormal phenotype with an interstitial 2p11.2 duplication has yet been reported. Here we report the first case with syndromic intellectual disability associated with microduplication at 2p11.2. Results We revisited a white female subject with a chromosome translocation, t(8;10)(p23;q23)mat and a 10q telomeric deletion suspected by G-banding 30 years ago. This female with severe intellectual disability, no speech, facial dysmorphism, intractable epilepsy, recurrent infection, and skeletal abnormalities has been observed from the birth until her death. The karyotype analysis reconfirmed the previously reported chromosome translocation with a revision as 46,XX,t(8;10)(p23.3;q23.2)mat by adding more detail in chromosomal sub-bands. The array comparative genomic hybridization, however, did not detect the 10q terminal deletion originally reported, but instead, revealed a 390 kb duplication at 2p11.2; 46,XX,t(8;10)(p23.3;q23.2)mat.arr[hg 19] 2p11.2(85469151x2,85474356-85864257x3,85868355x2). This duplication region was confirmed by real-time quantitative PCR and real-time reverse transcriptase quantitative PCR. Conclusions We suggest three positional candidate genes for intellectual disability and recurrent infection based upon gene function and data from real-time reverse transcriptase quantitative PCR—VAMP8 and RNF181 for intellectual disability and CAPG for recurrent infection. PMID:25295072

  2. Precision lifetime measurements of the 2p levels in lithium

    SciTech Connect

    Berry, H.G.; Kurtz, C.; Tanner, C.E.

    1995-08-01

    These measurements are motivated by the theoretical challenges posed by lithium. The three-electron lithium atom is one of the simplest atomic systems with which to test atomic structure calculations. Recently, there were several ab initio calculations of the lithium 2s-2p oscillator strengths, which agree to 0.15%. However, the theoretical results differ by 5 sigma from the precise fast-beam-laser lifetime measurement of Gaupp and Andra (Berlin). Hence the need for a new independent and precise measurement. Improvements were added to the fast beam laser techniques developed for cesium in order to measure the lithium 2p state lifetime. Although the technique is similar to that of cesium, the lithium atom presents a few new complications. Since the atom is lighter, it travels more quickly through the interaction and detection regions. Therefore, the 670 nm wavelength requires a dye laser to produce sufficient intensity to populate the excited state. Unfortunately, the intensity of the dye laser is inherently less stable than that of a diode laser. Another complication is that the ion-beam intensity is much more sensitive to fluctuations in the accelerating voltage. Two detectors were added: one to monitor the ion-beam intensity, and the other to monitor the laser power. With the information from the additional detectors, a new data analysis scheme was developed. Sufficient data were taken to evaluate the benefits of the new detectors. No additional work is planned at Argonne for this experiment.

  3. A Simple Band for Gastric Banding.

    PubMed

    Broadbent

    1993-08-01

    The author has noted that flexible gastric bands have occasionally stenosed the gastric stoma or allowed it to dilate. A band was developed using a soft outer silicone rubber tube over a holding mechanism made out of a nylon cable tie passed within the silicone tube. This simple, easily applied band is rigid, resisting scar contracture and dilatation. PMID:10757939

  4. Characterization of p-type wide band gap transparent oxide for heterojunction devices

    NASA Astrophysics Data System (ADS)

    Lim, Sang-Hyun

    Transparent p-type CuCr1-xMgxO2 wide band gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray pyrolysis technique using metalloorganic precursors. A mechanism of synthesis of CuCrO2 films involving precursor decomposition, oxidation, and reaction between constituent oxides in the spray deposition process is presented. Crystalline single phase CuCrO2 delafossite structure was dominant in ≥700ºC argon ambient annealed films but the as-deposited films contained spinel CuCr2O4 mixed phases as shown by XRD and XPS studies. Spin-orbital energy ˜9.8eV in Cr 2p electron spectra consistent with Cr3+ valence state and Cr 2p3/2 resolved peaks show mixed valence state on Cr4+ /Cr6+ confirming CuCr1-xMgxO 2 compound phase in the films. Effect of substrate temperature, film thickness, and acceptor Mg2+ doping on crystallographic structure, optical, electrical conductivity and thermoelectric coefficient was investigated. The invariance of the alpha- and increase of the c-lattice parameter with Mg concentration suggests that Mg2+ ions are introduced at the Cr3+ site. Highly transparent ≥80% CuCr 0.93Mg0.07O2 films with direct and indirect optical band gaps 3.08 and 2.58eV for 155 nm and 3.14 and 2.79eV for 305nm thin films, respectively were obtained. Photoluminescence emission bands at 532 and 484nm interpreted to arise from 3d94s1 and 3d 10 Cu+ intra-band transitions. Electrical conductivity of CuCr0.93Mg0.07O 2 films ranged from 0.6-1.0 Scm-1 and exhibits activation energies ˜0.11eV in 300-420K and ˜0.23eV in ≥ 420K region ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Restricted by the Mg solubility, the substituted Mg dopants limited to x≤0.05 are only able to contribute to the optimum hole carrier in the range ˜2-4x1019cm-3 and thus no substantial increase of electrical conductivity could be realized with increased Mg concentration. A major fraction of Mg atoms do not act as

  5. Kinetics of the Reactions of F((sup 2)P) and Cl((sup 2)P) with HNO3

    NASA Technical Reports Server (NTRS)

    Wine, P. H.; Wells, J. R.; Nicovich, J. M.

    1997-01-01

    The kinetics of the reactions of HNO3 with fluorine (k(sub 1)) and Chlorine (k(sub 2)) atoms have been studied by using a time-resolved long-path laser absorption technique to monitor the appearance of product NO3 radicals following 351-nm pulsed laser photolysis of X2/HNO3/He mixtures (X = F,Cl). Absolute rate coefficients for the F((sup 2)P) + HNO reaction have been determined over the temperature range 260-373 K. Between 260 and 320 K, the data are adequately represented by the Arrhenius expression k(sub 1)(T) = (6.0 +/- 2.6) x 10(exp -12) exp[(40 +/- 120)/T]cu cm/(molecule.s). Between 335 and 373 K, the rate coefficient is found to be (2.0 +/- 0.3) x 10(exp -11)cu cm/(molecule.s) independent of temperature. The observed temperature dependence suggests that reaction proceeds via competing direct abstraction and complex pathways. No NO3 production was observed in the experiments with X equals Cl, thus establishing that k(sub 2)(298 K) is less than 2 x 10(exp -16) cu cm/(molecule.s). The Cl((sup 2)P) + HNO reaction was also investigated by using a pulsed laser photolysis-resonance fluorescence technique to monitor the decay of Cl((sup 2)P). Upper limit values for k(sub 2) obtained from these experiments, in units of 10(exp -16)cu cm/(molecule.s), are 13 at 298 K and 10 at 400 K.

  6. Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

    DOE PAGESBeta

    Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; Jiang, Chao; Stanek, Christopher R.

    2015-11-24

    Complex doping schemes in R3Al5O12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimum (CBM) or valence-bandmore » maximum (VBM). We consider two sets of compositions based on Lu3B5O12 where B is Al, Ga, In, As, and Sb, and R3Al5O12, where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. Furthermore, this approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.« less

  7. Reinterpretation of the bond-valence model with bond-order formalism: An improved bond-valence-based interatomic potential for PbTiO3

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Grinberg, Ilya; Takenaka, Hiroyuki; Rappe, Andrew M.

    2013-09-01

    We present a modified bond-valence model of PbTiO3 based on the principles of bond-valence and bond-valence vector conservation. The relationship between the bond-valence model and the bond-order potential is derived analytically in the framework of a tight-binding model. An energy term, bond-valence vector energy, is introduced into the atomistic model and the potential parameters are reoptimized. This model potential can be applied both to canonical-ensemble (NVT) and isobaric-isothermal ensemble (NPT) molecular dynamics (MD) simulations. This model reproduces the experimental phase transition in NVT MD simulations and also exhibits the experimental sequence of temperature-driven and pressure-driven phase transitions in NPT simulations. We expect that this improved bond-valence model can be applied to a broad range of inorganic materials.

  8. Developmental Reversals in False Memory: Effects of Emotional Valence and Arousal

    ERIC Educational Resources Information Center

    Brainerd, C. J.; Holliday, R. E.; Reyna, V. F.; Yang, Y.; Toglia, M. P.

    2010-01-01

    Do the emotional valence and arousal of events distort children's memories? Do valence and arousal modulate counterintuitive age increases in false memory? We investigated those questions in children, adolescents, and adults using the Cornell/Cortland Emotion Lists, a word list pool that induces false memories and in which valence and arousal can…

  9. Distinct Brain Systems Underlie the Processing of Valence and Arousal of Affective Pictures

    ERIC Educational Resources Information Center

    Nielen, M. M. A.; Heslenfeld, D. J.; Heinen, K.; Van Strien, J. W.; Witter, M. P.; Jonker, C.; Veltman, D. J.

    2009-01-01

    Valence and arousal are thought to be the primary dimensions of human emotion. However, the degree to which valence and arousal interact in determining brain responses to emotional pictures is still elusive. This functional MRI study aimed to delineate neural systems responding to valence and arousal, and their interaction. We measured neural…

  10. Valence-Specific Laterality Effects in Vocal Emotion: Interactions with Stimulus Type, Blocking and Sex

    ERIC Educational Resources Information Center

    Schepman, Astrid; Rodway, Paul; Geddes, Pauline

    2012-01-01

    Valence-specific laterality effects have been frequently obtained in facial emotion perception but not in vocal emotion perception. We report a dichotic listening study further examining whether valence-specific laterality effects generalise to vocal emotions. Based on previous literature, we tested whether valence-specific laterality effects were…

  11. Work Valence as a Predictor of Academic Achievement in the Family Context

    ERIC Educational Resources Information Center

    Porfeli, Erik; Ferrari, Lea; Nota, Laura

    2013-01-01

    This study asserts a theoretical model of academic and work socialization within the family setting. The presumed associations between parents' work valences, children's work valences and valence perceptions, and children's academic interest and achievement are tested. The results suggest that children's perceptions of parents…

  12. Mott Transition of MnO under Pressure: A Comparison of Correlated Band Theories

    SciTech Connect

    Kasinathan, Deepa; Kunes, Jan; Koepernik, K; Diaconu, Cristian V; Martin, Richard L; Prodan, Ionut; Scuseria, Gustavo E; Spaldin, Nicola; Petit, Leon; Schulthess, Thomas C; Pickett, W. E.

    2006-01-01

    The electronic structure, magnetic moment, and volume collapse of MnO under pressure are obtained from four different correlated band theory methods; local density approximation+Hubbard U (LDA+U), pseudopotential self-interaction correction (pseudo-SIC), the hybrid functional (combined local exchange plus Hartree-Fock exchange), and the local spin density SIC (SIC-LSD) method. Each method treats correlation among the five Mn 3d orbitals (per spin), including their hybridization with three O 2p orbitals in the valence bands and their changes with pressure. The focus is on comparison of the methods for rock salt MnO (neglecting the observed transition to the NiAs structure in the 90-100 GPa range). Each method predicts a first-order volume collapse, but with variation in the predicted volume and critical pressure. Accompanying the volume collapse is a moment collapse, which for all methods is from high-spin to low-spin ((5/2){yields}(1/2)), not to nonmagnetic as the simplest scenario would have. The specific manner in which the transition occurs varies considerably among the methods: pseudo-SIC and SIC-LSD give insulator-to-metal, while LDA+U gives insulator-to-insulator and the hybrid method gives an insulator-to-semimetal transition. Projected densities of states above and below the transition are presented for each of the methods and used to analyze the character of each transition. In some cases the rhombohedral symmetry of the antiferromagnetically ordered phase clearly influences the character of the transition.

  13. Electronic band structure of magnetic bilayer graphene superlattices

    SciTech Connect

    Pham, C. Huy; Nguyen, T. Thuong

    2014-09-28

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  14. Tagging multiple emotional stimuli: negative valence has little benefit.

    PubMed

    Watson, Derrick G; Blagrove, Elisabeth

    2012-06-01

    Six experiments examined the influence of emotional valence on the tagging and enumeration of multiple targets. Experiments 1, 5 and 6 found that there was no difference in the efficiency of tagging/enumerating multiple negative or positive stimuli. Experiment 2 showed that, when neutral-expression face distractors were present, enumerating negative targets was faster overall, but was only more efficient for small numbers of targets. Experiments 3 and 4 determined that this negative target advantage was most likely caused by increased attentional guidance to negatively-valenced stimuli and was not based on simple visual feature differences. The findings suggest that a multiple-target negative stimulus advantage will only occur under conditions of attentional competition, and for relatively small numbers of targets. The results are discussed in relation to theories of multiple- and single-item processing, threat-priority mechanisms, and the types of representations that support different attentional tasks. PMID:22201468

  15. Interchannel coupling effects in the valence photoionization of SF6

    NASA Astrophysics Data System (ADS)

    Jose, Jobin; Lucchese, Robert; Rescigno, Tom

    2014-05-01

    The complex Kohn and polyatomic Schwinger variational techniques have been employed to illustrate the interchannel coupling correlation effects in the valence photoionization dynamics of SF6. Partial photoionization cross sections and asymmetry parameters of six valence subshells (1t1 g, 5t1 u, 1t2 u, 3eg, 1t2 g, 4t1 u) are discussed in the framework of several theoretical and experimental studies. The complex Kohn results are in rather good agreement with experimental results, indicative of the fact that the interchannel coupling effects alter the photoionization dynamics significantly. We find that the dominant effect of interchannel coupling is to reduce the magnitude of shape resonant cross sections near threshold and to induce resonant features in other channels to which resonances are coupled.

  16. Briefly Assessing Repetitive Thought Dimensions: Valence, Purpose, and Total.

    PubMed

    Segerstrom, Suzanne C; Hardy, Jaime K; Evans, Daniel R; Boggero, Ian A; Alden, Lynn E; Stanton, Annette L

    2016-10-01

    Discrete forms of repetitive thought (RT), such as worry and reflection, can be characterized along basic dimensions of valence (positive vs. negative) and purpose (searching vs. solving). In addition, people can be characterized as high or low in their tendency to engage in RT. This dimensional model has been demanding to assess, and a smaller number of items that could stand in for a large battery would make measurement more accessible. Using four samples (N = 1,588), eight items that assess RT valence, purpose, and total in a circumplex model were identified. Across these and other samples, the dimensions were adequately reliable and valid with regard to assessment via large RT battery, other measures of RT, and depressive symptoms. The accessibility of dimensional assessment of RT using this smaller number of items should facilitate work on questions about the qualities of RT that predict mental and physical health. PMID:26019299

  17. Emotional valence and arousal interact in attentional control.

    PubMed

    Jefferies, Lisa N; Smilek, Daniel; Eich, Eric; Enns, James T

    2008-03-01

    A recent study demonstrated that observers' ability to identify targets in a rapid visual sequence was enhanced when they simultaneously listened to happy music. In the study reported here, we examined how the emotion-attention relationship is influenced by changes in both mood valence (negative vs. positive) and arousal (low vs. high). We used a standard induction procedure to generate calm, happy, sad, and anxious moods in participants. Results for an attentional blink task showed no differences in first-target accuracy, but second-target accuracy was highest for participants with low arousal and negative affect (sad), lowest for those with strong arousal and negative affect (anxious), and intermediate for those with positive affect regardless of their arousal (calm, happy). We discuss implications of this valence-arousal interaction for the control of visual attention. PMID:18315803

  18. Superconductivity in SrNi2P2 single crystals

    SciTech Connect

    Ronning, Filip; Bauer, Eric D; Park, Tuscon; Thompson, Joe D

    2009-01-01

    Heat capacity, magnetic susceptibility, and resistivity of SrNi{sub 2}P{sub 2} single crystals are presented, illustrating the structural transition at 325 K, and bulk superconductivity at 1.4 K. The magnitude of {Tc}, fits to the heat capacity data, the small upper critical field H{sub c2} = 390 Oe, and {kappa} = 2.1 suggests a conventional fully gapped superconductor. With applied pressure we find that superconductivity persists into the so-called 'collapsed tetragonal' phase, although the transition temperature is monotonically suppressed with increasing pressure. This argues that reduced dimensionality can be a mechanism for increasing the transition temperatures of layered NiP, as well as layered FeAs and NiAs, superconductors.

  19. P2P Approach for Web Services Publishing and Discovery

    NASA Astrophysics Data System (ADS)

    Islam, Mohmammad Towhidul; Akon, Mursalin; Shen, Xuemin (Sherman)

    Web service is an emerging paradigm for distributing business applications from different platforms to a wide variety of clients. The critical factor in seamlessly accessing web services is to discover the appropriate service and the related service providers. Unfortunately, current web service technologies use centralized directory to keep the service index, which is not scalable and at the same time vulnerable to single point of failure. Peer to peer system is a popular decentralized architecture which can be used for key look up service with scalability and self organization. Thus there is an opportunity to intersect the P2P framework with web services to provide the scalable solution. In this chapter, we discuss the key methods to deploy web services using the peer-to-peer technology.

  20. Orbital character of O-2p unoccupied states near the Fermi level in CrO{sub 2}

    SciTech Connect

    Stagarescu, C. B.; Su, X.; Eastman, D. E.; Altmann, K. N.; Himpsel, F. J.; Gupta, A.

    2000-04-01

    The orbital character, orientation, and magnetic polarization of the O-2p unoccupied states near the Fermi level (E{sub F}) in CrO{sub 2} was determined using polarization-dependent x-ray absorption spectroscopy and x-ray magnetic circular dichroism from high-quality, single-crystal films. A sharp peak observed just above E{sub F} is excited only by the electric-field vector (E) normal to the tetragonal c axis, characteristic of a narrow band ({approx_equal}0.7 eV bandwidth) constituted from O-2p orbitals perpendicular to c (O-2p{sub y}) hybridized with Cr 3d{sub xz-yz} t{sub 2g} states. By comparison with band-structure and configuration-interaction cluster calculations our results support a model of CrO{sub 2} as a half-metallic ferromagnet with large exchange-splitting energy ({delta}{sub exch-split}{approx_equal}3.0 eV) and substantial correlation effects. (c) 2000 The American Physical Society.

  1. Electronic- and band-structure evolution in low-doped (Ga,Mn)As

    SciTech Connect

    Yastrubchak, O.; Gluba, L.; Żuk, J.; Sadowski, J.; MAX-Lab, Lund University, 22100 Lund ; Krzyżanowska, H.; Department of Physics and Astronomy, Vanderbilt University, 6506 Stevenson Center, Nashville, Tennessee 37325 ; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2013-08-07

    Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

  2. Single-layer MoS2 on Au(111): Band gap renormalization and substrate interaction

    NASA Astrophysics Data System (ADS)

    Bruix, Albert; Miwa, Jill A.; Hauptmann, Nadine; Wegner, Daniel; Ulstrup, Søren; Grønborg, Signe S.; Sanders, Charlotte E.; Dendzik, Maciej; Grubišić Čabo, Antonija; Bianchi, Marco; Lauritsen, Jeppe V.; Khajetoorians, Alexander A.; Hammer, Bjørk; Hofmann, Philip

    2016-04-01

    The electronic structure of epitaxial single-layer MoS2 on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunneling spectroscopy, and first-principles calculations. While the band dispersion of the supported single layer is close to a free-standing layer in the vicinity of the valence-band maximum at K ¯ and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: at Γ ¯, the valence-band maximum has a significantly higher binding energy than in the free MoS2 layer and the expected spin-degeneracy of the uppermost valence band at the M ¯ point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS2 orbitals with the substrate.

  3. Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

    NASA Astrophysics Data System (ADS)

    Maréchal, A.; Aoukar, M.; Vallée, C.; Rivière, C.; Eon, D.; Pernot, J.; Gheeraert, E.

    2015-10-01

    Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 °C of Al2O3 on oxygen-terminated boron doped (001) diamond. Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset Δ E v of 1.34 ± 0.2 eV and conduction band offset Δ E c of 0.56 ± 0.2 eV considering an Al2O3 energy band gap of 7.4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed.

  4. Band crossing in isovalent semiconductor alloys with large size mismatch

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Wei, Su-Huai

    2012-02-01

    Mixing isovalent compounds AC with BC to form alloys A1-xBxC has been an effective way in band structure engineering to enhance the availability of material properties. In most cases, the mixed isovalent atoms A and B, such as Al and Ga in Al1-xGaxAs or As and Sb in GaAs1-xSbx are similar in their atomic sizes and chemical potentials; therefore, the physical properties of A1-xBxC change smoothly from AC to BC. However, in some cases when the chemical and size differences between the isovalent atoms A and B are large, adding a small amount of B to AC or vice versa can lead to a discontinuous change in the electronic band structure. These large size- and chemicalmismatched (LSCM) systems often show unusual and abrupt changes in the alloys' material properties, which provide great potential in material design for novel device applications. In this report, based on first-principles band-structure calculations we show that for LSCM GaAs1-xNx and GaAs1-xBix alloys at the impurity limit the N (Bi)-induced impurity level is above (below) the conduction-(valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

  5. Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals

    SciTech Connect

    Wang, Xinshun Liu, Yang; Zhao, Panjuan; Guo, Zhongyi; Li, Yan; Qu, Shiliang

    2015-04-21

    The broad band upconversion luminescence in Yb{sup 3+}:YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463 nm could be assigned to the 5d → 4f transitions of Yb{sup 2+} ions and the one at 692 nm could be attributed to the electron-hole recombination process on (Yb{sup 2+}-F{sup +}) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb{sup 3+} to Yb{sup 2+} and (Yb{sup 2+}-F{sup +}) centers have been induced by infrared femtosecond laser irradiation in Yb{sup 3+}:YAG crystal.

  6. EEG study on affective valence elicited by novel and familiar pictures using ERD/ERS and SVM-RFE.

    PubMed

    Hidalgo-Muñoz, A R; López, M M; Galvao-Carmona, A; Pereira, A T; Santos, I M; Vázquez-Marrufo, M; Tomé, A M

    2014-02-01

    EEG signals have been widely explored in emotional processing analyses, both in time and frequency domains. However, in such studies, habituation phenomenon is barely considered in the discrimination of different emotional responses. In this work, spectral features of the event-related potentials (ERPs) are studied by means of event-related desynchronization/synchronization computation. In order to determine the most relevant ERP features for distinguishing how positive and negative affective valences are processed within the brain, support vector machine-recursive feature elimination is employed. The proposed approach was applied for investigating in which way the familiarity of stimuli affects the affective valence processing as well as which frequency bands and scalp regions are more involved in this process. In a group composed of young adult women, results prove that parietooccipital region and theta band are especially involved in the processing of novelty in emotional stimuli. Furthermore, the proposed method has shown to perform successfully using a moderated number of trials. PMID:24257836

  7. On the valence fluctuation in the early actinide metals

    DOE PAGESBeta

    Soderlind, P.; Landa, A.; Tobin, J. G.; Allen, P.; Medling, S.; Booth, C. H.; Bauer, E. D.; Cooley, J. C.; Sokaras, D.; Weng, T. -C.; et al

    2015-12-15

    In this study, recent X-ray measurements suggest a degree of valence fluctuation in plutonium and uranium intermetallics. We are applying a novel scheme, in conjunction with density functional theory, to predict 5f configuration fractions of states with valence fluctuations for the early actinide metals. For this purpose we perform constrained integer f-occupation calculations for the α phases of uranium, neptunium, and plutonium metals. For plutonium we also investigate the δ phase. The model predicts uranium and neptunium to be dominated by the f3 and f4 configurations, respectively, with only minor contributions from other configurations. For plutonium (both α and δmore » phase) the scenario is dramatically different. Here, the calculations predict a relatively even distribution between three valence configurations. The δ phase has a greater configuration fraction of f6 compared to that of the α phase. The theory is consistent with the interpretations of modern X-ray experiments and we present resonant X-ray emission spectroscopy results for α-uranium.« less

  8. Chromium valences in ureilite olivine and implications for ureilite petrogenesis

    NASA Astrophysics Data System (ADS)

    Goodrich, C. A.; Sutton, S. R.; Wirick, S.; Jercinovic, M. J.

    2013-12-01

    Ureilites are a group of ultramafic achondrites commonly thought to be residues of partial melting on a carbon-rich asteroid. They show a large variation in FeO content (olivine Fo values ranging from ∼74 to 95) that cannot be due to igneous fractionation and suggests instead variation in oxidation state. The presence of chromite in only a few of the most ferroan (Fo 75-76) samples appears to support such a model. MicroXANES analyses were used in this study to determine the valence states of Cr (previously unknown) in olivine cores of 11 main group ureilites. The goal of this work was to use a method that is independent of Fo to determine the oxidation conditions under which ureilites formed, in order to evaluate whether the ureilite FeO-variation is correlated with oxidation state, and whether it is nebular or planetary in origin. Two of the analyzed samples, LEW 88774 (Fo 74.2) and NWA 766 (Fo 76.7) contain primary chromite; two others, LAP 03587 (Fo 74.4) and CMS 04048 (Fo 76.2) contain sub-micrometer-sized exsolutions of chromite + Ca-rich pyroxene in olivine; and one, EET 96328 (Fo 85.2) contains an unusual chromite grain of uncertain origin. No chromite has been observed in the remaining six samples (Fo 77.4-92.3). Chromium in olivine in all eleven samples was found to be dominated by the divalent species, with valences ranging from 2.10 ± 0.02 (1σ) to 2.46 ± 0.04. The non-chromite-bearing ureilites have the most reduced Cr, with a weighted mean valence of 2.12 ± 0.01, i.e., Cr2+/Cr3+ = 7.33. All low-Fo chromite-bearing ureilites have more oxidized Cr, with valences ranging from 2.22 ± 0.03 to 2.46 ± 0.04. EET 96328, whose chromite grain we interpret as a late-crystallizing phase, yielded a reduced Cr valence of 2.15 ± 0.07, similar to the non-chromite-bearing samples. Based on the measured Cr valences, magmatic (1200-1300 °C) oxygen fugacities (fO2) of the non-chromite-bearing samples were estimated to be in the range IW-1.9 to IW-2.8 (assuming

  9. Predicting the Valence of a Scene from Observers’ Eye Movements

    PubMed Central

    R.-Tavakoli, Hamed; Atyabi, Adham; Rantanen, Antti; Laukka, Seppo J.; Nefti-Meziani, Samia; Heikkilä, Janne

    2015-01-01

    Multimedia analysis benefits from understanding the emotional content of a scene in a variety of tasks such as video genre classification and content-based image retrieval. Recently, there has been an increasing interest in applying human bio-signals, particularly eye movements, to recognize the emotional gist of a scene such as its valence. In order to determine the emotional category of images using eye movements, the existing methods often learn a classifier using several features that are extracted from eye movements. Although it has been shown that eye movement is potentially useful for recognition of scene valence, the contribution of each feature is not well-studied. To address the issue, we study the contribution of features extracted from eye movements in the classification of images into pleasant, neutral, and unpleasant categories. We assess ten features and their fusion. The features are histogram of saccade orientation, histogram of saccade slope, histogram of saccade length, histogram of saccade duration, histogram of saccade velocity, histogram of fixation duration, fixation histogram, top-ten salient coordinates, and saliency map. We utilize machine learning approach to analyze the performance of features by learning a support vector machine and exploiting various feature fusion schemes. The experiments reveal that ‘saliency map’, ‘fixation histogram’, ‘histogram of fixation duration’, and ‘histogram of saccade slope’ are the most contributing features. The selected features signify the influence of fixation information and angular behavior of eye movements in the recognition of the valence of images. PMID:26407322

  10. Interchannel coupling effects in the valence photoionization of SF6

    NASA Astrophysics Data System (ADS)

    Jose, J.; Lucchese, R. R.; Rescigno, T. N.

    2014-05-01

    The complex Kohn and polyatomic Schwinger variational techniques have been employed to illustrate the interchannel coupling correlation effects in the valence photoionization dynamics of SF6. Partial photoionization cross sections and asymmetry parameters of six valence subshells (1t1g, 5t1u, 1t2u, 3eg, 1t2g, 4t1u) are discussed in the framework of several theoretical and experimental studies. The complex Kohn results are in rather good agreement with experimental results, indicative of the fact that the interchannel coupling effects alter the photoionization dynamics significantly. We find that the dominant effect of interchannel coupling is to reduce the magnitude of shape resonant cross sections near the threshold and to induce resonant features in other channels to which resonances are coupled. The long-standing issue concerning ordering of the valence orbitals is addressed and confirmed 4t1u61t2g63eg4(5t1u6+1t2u6) 1t1g6 as the most likely ordering.

  11. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  12. Optoelectronic properties of valence-state-controlled amorphous niobium oxide.

    PubMed

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-29

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications. PMID:27168317

  13. On the valence fluctuation in the early actinide metals

    SciTech Connect

    Soderlind, P.; Landa, A.; Tobin, J. G.; Allen, P.; Medling, S.; Booth, C. H.; Bauer, E. D.; Cooley, J. C.; Sokaras, D.; Weng, T. -C.; Nordlund, D.

    2015-12-15

    In this study, recent X-ray measurements suggest a degree of valence fluctuation in plutonium and uranium intermetallics. We are applying a novel scheme, in conjunction with density functional theory, to predict 5f configuration fractions of states with valence fluctuations for the early actinide metals. For this purpose we perform constrained integer f-occupation calculations for the α phases of uranium, neptunium, and plutonium metals. For plutonium we also investigate the δ phase. The model predicts uranium and neptunium to be dominated by the f3 and f4 configurations, respectively, with only minor contributions from other configurations. For plutonium (both α and δ phase) the scenario is dramatically different. Here, the calculations predict a relatively even distribution between three valence configurations. The δ phase has a greater configuration fraction of f6 compared to that of the α phase. The theory is consistent with the interpretations of modern X-ray experiments and we present resonant X-ray emission spectroscopy results for α-uranium.

  14. Predicting the Valence of a Scene from Observers' Eye Movements.

    PubMed

    R-Tavakoli, Hamed; Atyabi, Adham; Rantanen, Antti; Laukka, Seppo J; Nefti-Meziani, Samia; Heikkilä, Janne

    2015-01-01

    Multimedia analysis benefits from understanding the emotional content of a scene in a variety of tasks such as video genre classification and content-based image retrieval. Recently, there has been an increasing interest in applying human bio-signals, particularly eye movements, to recognize the emotional gist of a scene such as its valence. In order to determine the emotional category of images using eye movements, the existing methods often learn a classifier using several features that are extracted from eye movements. Although it has been shown that eye movement is potentially useful for recognition of scene valence, the contribution of each feature is not well-studied. To address the issue, we study the contribution of features extracted from eye movements in the classification of images into pleasant, neutral, and unpleasant categories. We assess ten features and their fusion. The features are histogram of saccade orientation, histogram of saccade slope, histogram of saccade length, histogram of saccade duration, histogram of saccade velocity, histogram of fixation duration, fixation histogram, top-ten salient coordinates, and saliency map. We utilize machine learning approach to analyze the performance of features by learning a support vector machine and exploiting various feature fusion schemes. The experiments reveal that 'saliency map', 'fixation histogram', 'histogram of fixation duration', and 'histogram of saccade slope' are the most contributing features. The selected features signify the influence of fixation information and angular behavior of eye movements in the recognition of the valence of images. PMID:26407322

  15. Core-core and core-valence correlation

    NASA Technical Reports Server (NTRS)

    Bauschlicher, Charles W., Jr.; Langhoff, Stephen R.; Taylor, Peter R.

    1988-01-01

    The effect of (1s) core correlation on properties and energy separations was analyzed using full configuration-interaction (FCI) calculations. The Be 1 S - 1 P, the C 3 P - 5 S and CH+ 1 Sigma + or - 1 Pi separations, and CH+ spectroscopic constants, dipole moment and 1 Sigma + - 1 Pi transition dipole moment were studied. The results of the FCI calculations are compared to those obtained using approximate methods. In addition, the generation of atomic natural orbital (ANO) basis sets, as a method for contracting a primitive basis set for both valence and core correlation, is discussed. When both core-core and core-valence correlation are included in the calculation, no suitable truncated CI approach consistently reproduces the FCI, and contraction of the basis set is very difficult. If the (nearly constant) core-core correlation is eliminated, and only the core-valence correlation is included, CASSCF/MRCI approached reproduce the FCI results and basis set contraction is significantly easier.

  16. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    PubMed Central

    Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong

    2015-01-01

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination. PMID:26179885

  17. Excitations of one-valence-proton, one-valence-neutron nucleus {sup 210}Bi from cold-neutron capture

    SciTech Connect

    Cieplicka-Oryńczak, N.; Fornal, B.; Szpak, B.; Leoni, S.; Bottoni, S.; Bazzacco, D.; Blanc, A.; Jentschel, M.; Köster, U.; Mutti, P.; Soldner, T.; Bocchi, G.; France, G. de; Simpson, G.; Urban, W.

    2015-10-15

    The low-spin structure of one-proton, one-neutron {sup 210}Bi nucleus was investigated in cold-neutron capture reaction on {sup 209}Bi. The γ-coincidence measurements were performed with use of EXILL array consisted of 16 HPGe detectors. The experimental results were compared to shell-model calculations involving valence particles excitations. The {sup 210}Bi nucleus offers the potential to test the effective proton-neutron interactions because most of the states should arise from the proton-neutron excitations. Additionally, it was discovered that a few states should come from the couplings of valence particles to the 3{sup −} octupole vibration in {sup 208}Pb which provides also the possibility of testing the calculations involving the core excitations.

  18. Electronic Structure and Valence of Mn impurities in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, Thomas C.

    2003-11-01

    Mn doped III-V semiconductors have recently become very popular materials since they are ferromagnetic at reasonably high temperatures and in some cases show carrier induced magnetism, where the Curie temperature can be altered by changes in the carrier concentration. It is expected that these materials will play an important role in Spintronics devices. Substitutional Mn impurities in III-V semiconductors can acquire either a divalent or a trivalent configuration. For example, it is generally accepted that Mn in GaAs is in a (d^5+h) configuration with five occupied Mn d-orbitals and a delocalized hole in the valence band. In contrast, Mn in GaN is believed to be in a d^4 configuration with a deep impurity state that has d-character. But there have recently been some discussions about the possibility of having some Mn ion in GaN assuming a divalent (d^5+h) type configuration. In order to achieve carrier induced ferromagnetism, the desired state of the Mn ions in III-V semiconductors is the (d^5+h) configuration. We have therefore performed ab-initio calculations of the Mn valence when it substitutes Ga in various III-V semiconductor hosts. We use the self-interaction corrected local spin density (SIC-LSD) method which is able to treat localized impurity orbitals properly. In particular we find that the method is capable of predicting the (d^5+h) state of Mn in GaAs. For Mn in GaP and GaN the calculations predict a trivalent d^4 state in the idealized system. The energy differences between d^4 and (d^5+h) configurations in GaP are, however, very small. Introduction of defects or donors does change the valence of Mn in GaP, favoring the divalent state under certain circumstances. Work done in collaboration with W. Temmerman and S. Szotek, Daresbury Laboratory, G. M. Stocks, ORNL, and W. H. Butler, MINT Center University of Alabama. This work supported by the Defense Advanced Research Agency and by DOE Office of Science trough ASCR/MICS and BES/DMSE under Contract No

  19. Energetic Landscape of MDM2-p53 Interactions by Computational Mutagenesis of the MDM2-p53 Interaction

    PubMed Central

    Thayer, Kelly M.; Beyer, George A.

    2016-01-01

    The ubiquitin ligase MDM2, a principle regulator of the tumor suppressor p53, plays an integral role in regulating cellular levels of p53 and thus a prominent role in current cancer research. Computational analysis used MUMBO to rotamerize the MDM2-p53 crystal structure 1YCR to obtain an exhaustive search of point mutations, resulting in the calculation of the ΔΔG comprehensive energy landscape for the p53-bound regulator. The results herein have revealed a set of residues R65-E69 on MDM2 proximal to the p53 hydrophobic binding pocket that exhibited an energetic profile deviating significantly from similar residues elsewhere in the protein. In light of the continued search for novel competitive inhibitors for MDM2, we discuss possible implications of our findings on the drug discovery field. PMID:26992014

  20. Energetic Landscape of MDM2-p53 Interactions by Computational Mutagenesis of the MDM2-p53 Interaction.

    PubMed

    Thayer, Kelly M; Beyer, George A

    2016-01-01

    The ubiquitin ligase MDM2, a principle regulator of the tumor suppressor p53, plays an integral role in regulating cellular levels of p53 and thus a prominent role in current cancer research. Computational analysis used MUMBO to rotamerize the MDM2-p53 crystal structure 1YCR to obtain an exhaustive search of point mutations, resulting in the calculation of the ΔΔG comprehensive energy landscape for the p53-bound regulator. The results herein have revealed a set of residues R65-E69 on MDM2 proximal to the p53 hydrophobic binding pocket that exhibited an energetic profile deviating significantly from similar residues elsewhere in the protein. In light of the continued search for novel competitive inhibitors for MDM2, we discuss possible implications of our findings on the drug discovery field. PMID:26992014

  1. Ternary complex formation of Ino2p-Ino4p transcription factors and Apl2p adaptin beta subunit in yeast.

    PubMed

    Nikawa, Jun-ichi; Yata, Masako; Motomura, Miki; Miyoshi, Nobutaka; Ueda, Tsuyoshi; Hisada, Daisuke

    2006-11-01

    Yeast Ino2p-Ino4p heterodimeric complex is well known as a transcriptional activator for the genes regulated by inositol and choline, such as the INO1 gene. Apl2p is a large subunit of the yeast adaptin complex, an adaptor complex required for the clathrin coat to bind to the membrane. We found that Ino2p, Ino4p, and Apl2p form a ternary complex. This interaction was initially observed in a yeast two-hybrid study and subsequently verified by co-immunoprecipitation. Ino2p and Ino4p bind to Apl2p in the same region of Apl2p, viz., at the middle part and the C-terminal part. Ino2p and Ino4p bind to Apl2p independently, but more strongly when both are present. Furthermore, a disruption of APL2 together with INO2 or INO4 rendered yeast cells sensitive to oxidative stress. INO2-APL2 double disruptants also showed growth inability in non-fermentable carbon sources, such as glycerol. These results indicate a genetic interaction between APL2, INO2 and INO4 and uncovere novel functions of the Ino2p-Ino4p-Apl2p complex in yeast. PMID:17090927

  2. Band offsets in c-Si/Si-XII heterojunctions

    NASA Astrophysics Data System (ADS)

    Mustafa, Jamal I.; Malone, Brad D.; Cohen, Marvin L.; Louie, Steven G.

    2014-08-01

    Silicon has a rich phase diagram with a multitude of phases existing over a wide range of pressures and temperatures, in addition to the common cubic silicon (c-Si) phase. One such phase, Si-XII, was first observed less than 2 decades ago in diamond anvil experiments, and more recently as a product of nanoindentation. In some of these latter experiments, I-V measurements were performed to characterize the c-Si/Si-XII interface that results when Si-XII is formed in cubic silicon substrates. In this paper we describe calculations of the band offsets in c-Si/Si-XII heterojunctions. We find that the heterojunction is of Type I and that the band offsets are estimated to be ΔEv=0.3 eV and ΔEc=0.5 eV for the valence bands and conduction bands, respectively.

  3. Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides

    SciTech Connect

    Shaposhnikov, V. L. Migas, D. B.; Borisenko, V. E.; Dorozhkin, N. N.

    2009-02-15

    The pseudopotential method has been used to optimize the crystal lattice and calculate the energy band spectra for iron, ruthenium and, osmium monosilicides. It is found that all these compounds are indirect-gap semiconductors with band gaps of 0.17, 0.22, and 0.50 eV (FeSi, RuSi, and OsSi, respectively). A distinctive feature of their band structure is the 'loop of extrema' both in the valence and conduction bands near the center of the cubic Brillouin zone.

  4. Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

    SciTech Connect

    Jandieri, K. Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, S. W.; Volz, K.; Stolz, W.

    2015-08-14

    We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

  5. Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

    SciTech Connect

    Simma, M.; Bauer, G.; Springholz, G.

    2012-10-22

    The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

  6. Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Jandieri, K.; Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, S. W.; Volz, K.; Stolz, W.

    2015-08-01

    We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

  7. Composite Chiral Bands in the A{approx}105 Mass Region

    SciTech Connect

    Timar, J.; Sohler, D.; Molnar, J.; Algora, A.; Dombradi, Zs.; Krasznahorkay, A.; Zolnai, L.; Vaman, C.; Starosta, K.; Joshi, P.; Wadsworth, R.; Jenkins, D.G.; Raddon, P.M.; Simons, A.J.; Wilkinson, A.R.; Dimitrov, V.I.; Fossan, D.B.; Koike, T.; Bednarczyk, P.; Curien, D.

    2005-11-21

    Composite chiral bands, corresponding to the {pi}g9/2v(h11/2)2 quasiparticle configuration, have been observed in 103Rh and 105Rh. The behaviour of these bands is compared with that of the chiral bands with a {pi}g9/2vh11/2 quasiparticle configuration observed in the odd-odd 102Rh and 104Rh nuclei. This comparison shows in a model independent way that the energy separation pattern of the chiral partner bands depends strongly on the properties of the triaxial core whilst the dependence on the valence quasiparticle coupling and on the Fermi level is weaker.

  8. Come Join the Band

    ERIC Educational Resources Information Center

    Olson, Cathy Applefeld

    2011-01-01

    A growing number of students in Blue Springs, Missouri, are joining the band, drawn by a band director who emphasizes caring and inclusiveness. In the four years since Melissia Goff arrived at Blue Springs High School, the school's extensive band program has swelled. The marching band alone has gone from 100 to 185 participants. Also under Goff's…

  9. The casein kinases Yck1p and Yck2p act in the secretory pathway, in part, by regulating the Rab exchange factor Sec2p

    PubMed Central

    Stalder, Danièle; Novick, Peter J.

    2016-01-01

    Sec2p is a guanine nucleotide exchange factor that activates Sec4p, the final Rab GTPase of the yeast secretory pathway. Sec2p is recruited to secretory vesicles by the upstream Rab Ypt32p acting in concert with phosphatidylinositol-4-phosphate (PI(4)P). Sec2p also binds to the Sec4p effector Sec15p, yet Ypt32p and Sec15p compete against each other for binding to Sec2p. We report here that the redundant casein kinases Yck1p and Yck2p phosphorylate sites within the Ypt32p/Sec15p binding region and in doing so promote binding to Sec15p and inhibit binding to Ypt32p. We show that Yck2p binds to the autoinhibitory domain of Sec2p, adjacent to the PI(4)P binding site, and that addition of PI(4)P inhibits Sec2p phosphorylation by Yck2p. Loss of Yck1p and Yck2p function leads to accumulation of an intracellular pool of the secreted glucanase Bgl2p, as well as to accumulation of Golgi-related structures in the cytoplasm. We propose that Sec2p is phosphorylated after it has been recruited to secretory vesicles and the level of PI(4)P has been reduced. This promotes Sec2p function by stimulating its interaction with Sec15p. Finally, Sec2p is dephosphorylated very late in the exocytic reaction to facilitate recycling. PMID:26700316

  10. Three-step approach for computing band offsets and its application to inorganic A B X3 halide perovskites

    NASA Astrophysics Data System (ADS)

    Lang, Li; Zhang, Yue-Yu; Xu, Peng; Chen, Shiyou; Xiang, H. J.; Gong, X. G.

    2015-08-01

    Band offsets between different semiconductors are important parameters that determine the electronic transport properties near the interface in the heterostructure devices. The computation of the natural band offset is a well-known challenge. In this paper, we propose a new method, which is called the three-step method, to accurately predict the natural band offset. Compared to previous methods, the present method is more direct and can be easily applied to systems with larger lattice mismatch and to systems with lower symmetry. Using the present method, we successfully calculate the natural band offset between the inorganic halide perovskites A B X3(A =Cs ;B =Sn ,Pb ;X =Cl ,B ,I ) in the cubic and orthorhombic phase. We show that the valence band maximum shifts down as the atomic number of the X site ion increases, while the valence band maximum shifts up as B site ion varies from Sn to Pb or as the compound transforms from the cubic phase to the orthorhombic phase. It is found that the band gap differences between these compounds can be attributed primarily to the valence band offsets, with a much smaller contribution from the conduction band offsets.

  11. Multicast Services over Structured P2P Networks

    NASA Astrophysics Data System (ADS)

    Manzanares-Lopez, Pilar; Malgosa-Sanahuja, Josemaria; Muñoz-Gea, Juan Pedro; Sanchez-Aarnoutse, Juan Carlos

    IP multicast functionality was defined as an efficient method to transmit datagrams to a group of receivers. However, although a lot of research work has been done in this technology, IP multicast has not spread out over the Internet as much as expected, reducing its use for local environments (i.e., LANs). The peer-to-peer networks paradigm can be used to overcome the IP multicast limitations. In this new scenario (called Application Layer Multicast or ALM), the multicast functionality is changed from network to application layer. Although ALM solution can be classified into unstructured and structured solutions, the last ones are the best option to offer multicast services due to the effectiveness in the discovery nodes, their mathematical definition and the totally decentralized management. In this chapter we are going to offer a tutorial of the main structured ALM solutions, but introducing two novelties with respect to related surveys in the past: first, the systematic description of most representative structured ALM solution in OverSim (one of the most popular p2p simulation frameworks). Second, some simulation comparatives between flooding-based and tree-based structured ALM solution are also presented.

  12. Migration of Dust Particles from Comet 2P Encke

    NASA Technical Reports Server (NTRS)

    Ipatov, S. I.

    2003-01-01

    We investigated the migration of dust particles under the gravitational influence of all planets (except for Pluto), radiation pressure, Poynting-Robertson drag and solar wind drag for Beta equal to 0.002, 0.004, 0.01, 0.05, 0.1, 0.2, and 0.4. For silicate particles such values of Beta correspond to diameters equal to about 200, 100, 40, 9, 4, 2, and 1 microns, respectively. We used the Bulirsh-Stoer method of integration, and the relative error per integration step was taken to be less than lo-'. Initial orbits of the particles were close to the orbit of Comet 2P Encke. We considered initial particles near perihelion (runs denoted as Delta tsub o, = 0), near aphelion (Delta tsub o, = 0.5), and also studied their initial positions when the comet moved for Pa/4 after perihelion passage (such runs are denoted as Delta tsub o, =i 0.25), where Pa is the period of the comet. Variations in time T when perihelion was passed was varied with a step 0.1 day for series 'S' and with a step 1 day for series 'L'. For each Beta we considered N = 101 particles for "S" runs and 150 particles for "L" runs.

  13. Rydberg, Valence and Ion-Pair Quintet States of O_2

    NASA Astrophysics Data System (ADS)

    Vazquez, Gabriel J.; Liebermann, Hans P.; Lefebvre-Brion, H.

    2015-06-01

    We carried out a relatively comprehensive ab--initio study of the electronic structure of O_2 and O_2^+. We employed the MRD--CI package together with the cc--pV4Z basis set augmented with seven diffuse functions of s, p and d character on each atom. In this contribution we focus on the quintet states. Potential energy curves of about 50 quintet states were computed. The spectroscopic constants of the six valence quintet states (^5σ^+_g, ^5σ^-_g, ^5σ^-_u, ^5Π_u, ^5Π_g, ^5Δ_g) dissociating to the first dissociation limit O(^3P)+O(^3P) are reported. The four ion--pair quintet states (^5σ^-_g, ^5σ^-_u, ^5Π_g, ^5Π_u) dissociating into O^+(^4S)+O^-(^2P) at 17.28 eV were also computed and their spectroscopic constants will be presented. A number of bound quintet Rydberg states belonging to series converging to the a^4Π_u, b^4σ^-_g, f^4Π_g and ^6σ^+_u states of the O_2^+ cation were identified and attributed. Long--range interactions involving the ion--pair states as they slowly approach their dissociation limit will be shown.

  14. Spectroscopic Study of Band Alignment in Alternative High-k MOS Dielectric Stacks

    NASA Astrophysics Data System (ADS)

    Bersch, E.; Rangan, S.; Garfunkel, E.; Bartynski, R. A.

    2007-03-01

    The study of high-k dielectrics and metal gate electrodes is critical to next generation MOSFETs. We have measured the band offsets of alternative MOS stacks using photoemission and inverse photoemission in the same chamber as well as synchrotron photoemission. At Rutgers, we have measured the valence and conduction band densities of states (DOS) and edges with UV photoemission and inverse photoemission, respectively, in situ. Using synchrotron photoemission we have measured the core level positions as well as the valence band DOS of clean and metallized dielectric/Si systems. The measurement of the chemical shifts of the core levels upon metallization enables us to evaluate the conduction band offset at the metal/dielectric interface. For Hf(x)Si(1-x)O(2), we find the conduction band offset (CBO) does not change as x is varied from 1 to 0.8, but the valence band offset increases by 0.4 eV. Titanium, aluminum and ruthenium were chosen as gate metals because of their prospective use as low and high workfunction metals in dual metal gate CMOS devices. We measured the CBO for the Ti, Al and Ru/Hf(x)Si(1-x)O(2) interfaces and found barriers involving Ti and Ru to be in good agreement with the interface gap state model, whereas the barrier involving Al deviated substantially from it due to the formation of an AlO(X) layer at the interface.

  15. Gold atomic clusters extracting the valence electrons to shield the carbon monoxide passivation on near-monolayer core-shell nanocatalysts in methanol oxidation reactions.

    PubMed

    Chen, Tsan-Yao; Li, Hong Dao; Lee, Guo-Wei; Huang, Po-Chun; Yang, Po-Wei; Liu, Yu-Ting; Liao, Yen-Fa; Jeng, Horng-Tay; Lin, Deng-Sung; Lin, Tsang-Lang

    2015-06-21

    Atomic-scale gold clusters were intercalated at the inter-facet corner sites of Pt-shell Ru-core nanocatalysts with near-monolayer shell thickness. We demonstrated that these unique clusters could serve as a drain of valence electrons in the kink region of the core-shell heterojunction. As jointly revealed by density functional theory calculations and valence band spectra, these Au clusters extract core-level electrons to the valence band. They prevent corrosion due to protonation and enhance the tolerance of CO by increasing the electronegativity at the outermost surface of the NCs during the methanol oxidation reaction (MOR). In these circumstances, the retained current density of Pt-shell Ru-core NCs is doubled in a long-term (2 hours) MOR at a fixed voltage (0.5 V vs. SCE) by intercalating these sub-nanometer gold clusters. Such novel structural confinement provides a possible strategy for developing direct-methanol fuel cell (DMFC) modules with high power and stability. PMID:25991582

  16. X-Band/Ka-Band Dichroic Plate

    NASA Technical Reports Server (NTRS)

    Chen, Jacqueline C.

    1993-01-01

    Dichroic plate designed nearly transparent to circularly polarized microwaves at frequencies between 31.8 and 34.7 GHz (in and near Ka band) and reflective at frequencies between 8.4 and 8.5 GHz (in the X band). Made of electrically conductive material and contains rectangular holes in staggered pattern.

  17. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    SciTech Connect

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  18. Generally Contracted Valence-Core/Valence Basis Sets for Use with Relativistic Effective Core Potentials and Spin-Orbit Coupling Operators

    SciTech Connect

    Ermler, Walter V.; Tilson, Jeffrey L.

    2012-12-15

    A procedure for structuring generally contracted valence-core/valence basis sets of Gaussian-type functions for use with relativistic effective core potentials (gcv-c/v-RECP basis sets) is presented. Large valence basis sets are enhanced using a compact basis set derived for outer core electrons in the presence of small-core RECPs. When core electrons are represented by relativistic effective core potentials (RECPs), and appropriate levels of theory, these basis sets are shown to provide accurate representations of atomic and molecular valence and outer-core electrons. Core/valence polarization and correlation effects can be calculated using these basis sets through standard methods for treating electron correlation. Calculations of energies and spectra for Ru, Os, Ir, In and Cs are reported. Spectroscopic constants for RuO2+, OsO2+, Cs2 and InH are calculated and compared with experiment.

  19. Neural correlates of valence generalization in an affective conditioning paradigm.

    PubMed

    Schick, Anita; Adam, Ruth; Vollmayr, Barbara; Kuehner, Christine; Kanske, Philipp; Wessa, Michèle

    2015-10-01

    In case of uncertainty, predictions that are based on prior, similar experiences guide our decision by processes of generalization. Over-generalization of negative information has been identified as an important feature of several psychopathologies, including anxiety disorders and depression, and might underlie biased interpretation of ambiguous information. Here, we investigated the neural correlates of valence generalization to ambiguous stimuli using a translational affective conditioning task during fMRI. Twenty-five healthy individuals participated in a conditioning procedure with (1) an initial acquisition phase, where participants learned the positive and negative valence of two different tones (reference tones) through their responses and subsequent feedback and (2) a test phase, where participants were presented with the previously learned reference tones and three additional tones with intermediate frequency to the learned reference tones. By recording the responses to these intermediate stimuli we were able to assess the participantsí interpretation of ambiguous tones as either positive or negative. Behavioral results revealed a graded response pattern to the three intermediate tones, which was mirrored on the neural level. More specifically, parametric analyses OF BOLD responses to all five tones revealed a linear effect in bilateral anterior insula and SMA with lowest activation to the negative reference tone and highest activation to the positive negative tone. In addition, a cluster in the SMA showed a reverse-quadratic response, i.e., the strongest response for the most ambiguous tone. These findings suggest overlapping regions in the salience network that mediate valence generalization and decision-making under ambiguity, potentially underlying biased ambiguous cue interpretation. PMID:26057359

  20. Valence-quark distribution functions in the kaon and pion

    NASA Astrophysics Data System (ADS)

    Chen, Chen; Chang, Lei; Roberts, Craig D.; Wan, Shaolong; Zong, Hong-Shi

    2016-04-01

    We describe expressions for pion and kaon dressed-quark distribution functions that incorporate contributions from gluons which bind quarks into these mesons and hence overcome a flaw of the commonly used handbag approximation. The distributions therewith obtained are purely valence in character, ensuring that dressed quarks carry all the meson's momentum at a characteristic hadronic scale and vanish as (1 -x )2 when Bjorken-x →1 . Comparing such distributions within the pion and kaon, it is apparent that the size of S U (3 ) -flavor symmetry breaking in meson parton distribution functions is modulated by the flavor dependence of dynamical chiral symmetry breaking. Corrections to these leading-order formulas may be divided into two classes, responsible for shifting dressed-quark momentum into glue and sea quarks. Working with available empirical information, we build an algebraic framework that is capable of expressing the principal impact of both classes of corrections. This enables a realistic comparison with experiment which allows us to identify and highlight basic features of measurable pion and kaon valence-quark distributions. We find that whereas roughly two thirds of the pion's light-front momentum is carried by valence dressed quarks at a characteristic hadronic scale; this fraction rises to 95% in the kaon; evolving distributions with these features to a scale typical of available Drell-Yan data produces a kaon-to-pion ratio of u -quark distributions that is in agreement with the single existing data set, and predicts a u -quark distribution within the pion that agrees with a modern reappraisal of π N Drell-Yan data. Precise new data are essential in order to validate this reappraisal and because a single modest-quality measurement of the kaon-to-pion ratio cannot be considered definitive.

  1. Geometric in-flight calibration of the stereoscopic line-CCD scanner MOMS-2P

    NASA Astrophysics Data System (ADS)

    Kornus, Wolfgang; Lehner, Manfred; Schroeder, Manfred

    This paper describes the geometric in-flight calibration of the Modular Optoelectronic Multispectral Scanner MOMS-2P, which has collected digital multispectral and threefold along-track stereoscopic imagery of the earth's surface from the PRIRODA module of the Russian space station MIR from October 1996 to August 1999. The goal is the verification and, if necessary, the update of the calibration data, which were estimated from the geometric laboratory calibration. The paper is subdivided into two parts, describing two different procedures of geometric in-flight calibration. The first method is based on DLR matching software and is restricted to nadir looking channels, which are read out simultaneously. From a high number of individual point matches between the images of the same area taken by the different CCD arrays, the most reliable ones are selected and used to calculate shifts with components in and across flight direction between the CCD arrays. These actual shifts are compared to the nominal shifts, derived from the results of the laboratory calibration, and parameters of the valid camera model are estimated from both data sets by least squares adjustment. A special case of band-to-band registration are the two optically combined CCD-arrays of the nadir high-resolution channel. They are read out simultaneously with a nominal 10 pixel overlap in stereoscopic imaging mode A. The DLR matching software is applied to calculate the displacement vector between the two CCD-arrays. The second method is based on combined photogrammetric bundle adjustment using an adapted functional model for the reconstruction of the interior orientation. It requires precise and reliable ground control information as well as navigation data of the navigation-package MOMS-NAV. Nine contiguous image scenes of MOMS-2P data-take T083C building an about 550-km-long strip over southern Germany and Austria taken in March 1997 were evaluated. From both procedures calibration data are

  2. Aging and long-term memory for emotionally valenced events.

    PubMed

    Breslin, Carolyn W; Safer, Martin A

    2013-06-01

    In 2008, 1103 ardent Boston Red Sox fans answered questions about their team's 2003 loss and 2004 win in baseball championship games with archrival New York Yankees. Contrary to predictions based on socioemotional selectivity theory, there were no significant interactions of age and event valence for accuracy in remembering event details, or for self-reported subjective vividness and rehearsal of the memories. Fans 65 years and older tended to remember feeling only sad about the 2003 loss, whereas fans 25 years and under tended to remember feeling both sad and angry. Individuals may remember emotional feelings based on remembered goals about an event. PMID:22888956

  3. Pion and kaon valence-quark parton distribution functions

    NASA Astrophysics Data System (ADS)

    Nguyen, Trang; Bashir, Adnan; Roberts, Craig D.; Tandy, Peter C.

    2011-06-01

    A rainbow-ladder truncation of QCD’s Dyson-Schwinger equations, constrained by existing applications to hadron physics, is employed to compute the valence-quark parton distribution functions of the pion and kaon. Comparison is made to π-N Drell-Yan data for the pion’s u-quark distribution and to Drell-Yan data for the ratio uK(x)/uπ(x): the environmental influence of this quantity is a parameter-free prediction, which agrees well with existing data. Our analysis unifies the computation of distribution functions with that of numerous other properties of pseudoscalar mesons.

  4. Pion and kaon valence-quark parton distribution functions.

    SciTech Connect

    Nguyen, T.; Bashir, A.; Roberts, C. D.; Tandy, P. C.

    2011-06-16

    A rainbow-ladder truncation of QCD's Dyson-Schwinger equations, constrained by existing applications to hadron physics, is employed to compute the valence-quark parton distribution functions of the pion and kaon. Comparison is made to {pi}-N Drell-Yan data for the pion's u-quark distribution and to Drell-Yan data for the ratio u{sub K}(x)/u{sub {pi}}(x): the environmental influence of this quantity is a parameter-free prediction, which agrees well with existing data. Our analysis unifies the computation of distribution functions with that of numerous other properties of pseudoscalar mesons.

  5. Pion and kaon valence-quark parton distribution functions

    SciTech Connect

    Nguyen, Trang; Bashir, Adnan; Roberts, Craig D.; Tandy, Peter C.

    2011-06-15

    A rainbow-ladder truncation of QCD's Dyson-Schwinger equations, constrained by existing applications to hadron physics, is employed to compute the valence-quark parton distribution functions of the pion and kaon. Comparison is made to {pi}-N Drell-Yan data for the pion's u-quark distribution and to Drell-Yan data for the ratio u{sub K}(x)/u{sub {pi}}(x): the environmental influence of this quantity is a parameter-free prediction, which agrees well with existing data. Our analysis unifies the computation of distribution functions with that of numerous other properties of pseudoscalar mesons.

  6. Heterojunction band offsets and dipole formation at BaTiO{sub 3}/SrTiO{sub 3} interfaces

    SciTech Connect

    Balaz, Snjezana; Zeng, Zhaoquan; Brillson, Leonard J.

    2013-11-14

    We used a complement of photoemission and cathodoluminescence techniques to measure formation of the BaTiO{sub 3} (BTO) on SrTiO{sub 3} (STO) heterojunction band offset grown monolayer by monolayer by molecular beam epitaxy. X-ray photoemission spectroscopy (XPS) provided core level and valence band edge energies to monitor the valence band offset in-situ as the first few crystalline BTO monolayers formed on the STO substrate. Ultraviolet photoemission spectroscopy (UPS) measured Fermi level positions within the band gap, work functions, and ionization potentials of the growing BTO film. Depth-resolved cathodoluminescence spectroscopy measured energies and densities of interface states at the buried heterojunction. Kraut-based XPS heterojunction band offsets provided evidence for STO/BTO heterojunction linearity, i.e., commutativity and transitivity. In contrast, UPS and XPS revealed a large dipole associated either with local charge transfer or strain-induced polarization within the BTO epilayer.

  7. Nature and evolution of the band-edge states in MoS2: From monolayer to bulk

    NASA Astrophysics Data System (ADS)

    Padilha, J. E.; Peelaers, H.; Janotti, A.; Van de Walle, C. G.

    2014-11-01

    Exploring two-dimensional layered materials, such as molybdenum disulfide (MoS2), for (opto)electronic applications requires detailed knowledge of their electronic band structures. Using first-principles calculations we trace the evolution of the band structure as a function of the number of layers, starting from a monolayer, which has a direct gap, to the bulk material, which has an indirect gap. We find that, with respect to the vacuum level, the valence-band maximum (VBM) increases rapidly with the number of layers, while the conduction-band minimum (CBM) remains almost constant. For two or more layers the VBM always occurs at Γ and the CBM occurs at K. These findings are analyzed in terms of the orbital composition of the valence- and conduction-band edges at the various high-symmetry points in the Brillouin zone.

  8. 16O + 16O molecular structures of positive- and negative-parity superdeformed bands in 34S

    NASA Astrophysics Data System (ADS)

    Taniguchi, Yasutaka

    2016-05-01

    The structures of excited states in 34S are investigated using the antisymmetrized molecular dynamics and generator coordinate method(GCM). The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity super de formed(SD) bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16O + 16O + two valence neutrons in molecular orbitals around the two 16O cores in a cluster picture. The configurations of the two valence neutrons are δ2 and π2 for the positive-parity SD bands and π1δ1 for the negative parity SD band.

  9. Theoretical performance of solar cell based on mini-bands quantum dots

    SciTech Connect

    Aly, Abou El-Maaty M. E-mail: ashraf.nasr@gmail.com; Nasr, A. E-mail: ashraf.nasr@gmail.com

    2014-03-21

    The tremendous amount of research in solar energy is directed toward intermediate band solar cell for its advantages compared with the conventional solar cell. The latter has lower efficiency because the photons have lower energy than the bandgap energy and cannot excite mobile carriers from the valence band to the conduction band. On the other hand, if mini intermediate band is introduced between the valence and conduction bands, then the smaller energy photons can be used to promote charge carriers transfer to the conduction band and thereby the total current increases while maintaining a large open circuit voltage. In this article, the influence of the new band on the power conversion efficiency for structure of quantum dots intermediate band solar cell is theoretically investigated and studied. The time-independent Schrödinger equation is used to determine the optimum width and location of the intermediate band. Accordingly, achievement of a maximum efficiency by changing the width of quantum dots and barrier distances is studied. Theoretical determination of the power conversion efficiency under the two different ranges of QD width is presented. From the obtained results, the maximum power conversion efficiency is about 70.42%. It is carried out for simple cubic quantum dot crystal under fully concentrated light. It is strongly dependent on the width of quantum dots and barrier distances.

  10. Hydrogen-carbon complexes and the blue luminescence band in GaN

    NASA Astrophysics Data System (ADS)

    Demchenko, Denis; Diallo, Ibrahima; Reshchikov, Michael

    The blue luminescence band with a maximum at 3.0 eV and the zero-phonon line at 3.33 eV (labeled BL2) is observed in high-resistivity GaN. Under prolonged ultraviolet (UV) light exposure, the BL2 band transforms into the yellow luminescence (YL) band with a maximum at 2.2 eV. Our calculations using hybrid functionals suggest that the BL2 band is related to a hydrogen-carbon defect complex, most likely CNON-Hi. The complex creates defect transition level close to the valence band, which is responsible for the BL2 band. Under UV illumination the complex dissociates, leaving as byproduct the source of the YL band (CNON or CN) and interstitial hydrogen. The work was supported by the National Science Foundation (DMR-1410125) and the Thomas F. and Kate Miller Jeffress Memorial Trust.

  11. 8-band k·p modelling of mid-infrared intersubband absorption in Ge quantum wells

    NASA Astrophysics Data System (ADS)

    Paul, D. J.

    2016-07-01

    The 8-band k.p parameters which include the direct band coupling between the conduction and the valence bands are derived and used to model optical intersubband transitions in Ge quantum well heterostructure material grown on Si substrates. Whilst for Si rich quantum wells the coupling between the conduction bands and valence bands is not important for accurate modelling, the present work demonstrates that the inclusion of such coupling is essential to accurately determine intersubband transitions between hole states in Ge and Ge-rich Si1-xGex quantum wells. This is due to the direct bandgap being far smaller in energy in Ge compared to Si. Compositional bowing parameters for a range of the key modelling input parameters required for Ge/SiGe heterostructures, including the Kane matrix elements, the effective mass of the Γ 2 ' conduction band, and the Dresselhaus parameters for both 6- and 8-band k.p modelling, have been determined. These have been used to understand valence band intersubband transitions in a range of Ge quantum well intersubband photodetector devices in the mid-infrared wavelength range.

  12. Influence of chemical bonds on the lifetime of the molecular-field-split 2p levels in H{sub 2}S

    SciTech Connect

    Bueno, Andre Machado; Brito, Arnaldo Naves de; Fink, Reinhold F.; Baessler, Margit; Bjoerneholm, Olle; Burmeister, Florian; Feifel, Raimund; Miron, Catalin; Sorensen, Stacey L.; Wang Honghong; Svensson, Svante

    2003-02-01

    Different lifetime broadenings in molecular-field-split 2p core levels in H{sub 2}S are predicted theoretically and are identified in an experimental investigation of the S 2p Auger electron spectrum. The measurements were performed for the transition to the vibrationally resolved X{sup 1}A{sub 1} ground state of H{sub 2}S{sup 2+}. The lifetimes of the 3e{sub 1/2} and 5e{sub 1/2} levels of the 2p ionized molecule are found to be 64 and 74 meV, respectively. This unambiguous determination of the lifetime difference of 10{+-}1 meV is only possible as the 4e{sub 1/2}{yields}X{sup 1}A{sub 1}(2b{sub 1}{sup -2}) decay channel that overlaps the 5e{sub 1/2}{yields}X{sup 1}A{sub 1}(2b{sub 1}{sup -2}) channel is practically suppressed in Auger decay in H{sub 2}S. The lifetime difference is confirmed by ab initio calculations. A theoretical analysis shows that it results from the mutual orientation of the core hole in the intermediate states and the valence electron density in the sulfur 3p orbitals. Both are strongly influenced by the chemical bond. Thus the observed effect is the direct result of a fundamental property of molecular electronic structure.

  13. Auger decay of Ar 2p satellite states studied with a multielectron coincidence method

    NASA Astrophysics Data System (ADS)

    Nakano, M.; Hikosaka, Y.; Lablanquie, P.; Penent, F.; Huttula, S.-M.; Suzuki, I. H.; Soejima, K.; Kouchi, N.; Ito, K.

    2012-04-01

    The Auger decay channels of the Ar 2p satellite states have been investigated using a multielectron coincidence technique, using a magnetic bottle time-of-flight electron spectrometer. For the Ar+(2p-13p-1np) satellite states the 2p hole is filled first, while for the Ar+(2p-13s-14s) satellite states the 3s hole is filled first with leading to Ar2+(2p-13p-1) states, which subsequently undergo an Auger decay leading to the filling of the 2p hole.

  14. Valence-bond quantum Monte Carlo algorithms defined on trees.

    PubMed

    Deschner, Andreas; Sørensen, Erik S

    2014-09-01

    We present a class of algorithms for performing valence-bond quantum Monte Carlo of quantum spin models. Valence-bond quantum Monte Carlo is a projective T=0 Monte Carlo method based on sampling of a set of operator strings that can be viewed as forming a treelike structure. The algorithms presented here utilize the notion of a worm that moves up and down this tree and changes the associated operator string. In quite general terms, we derive a set of equations whose solutions correspond to a whole class of algorithms. As specific examples of this class of algorithms, we focus on two cases. The bouncing worm algorithm, for which updates are always accepted by allowing the worm to bounce up and down the tree, and the driven worm algorithm, where a single parameter controls how far up the tree the worm reaches before turning around. The latter algorithm involves only a single bounce where the worm turns from going up the tree to going down. The presence of the control parameter necessitates the introduction of an acceptance probability for the update. PMID:25314561

  15. +2 Valence Metal Concentrations in Lion Creek, Oakland, California

    NASA Astrophysics Data System (ADS)

    Vazquez, P.; Zedd, T.; Chagolla, R.; Dutton-Starbuck, M.; Negrete, A.; Jinham, M.; Lapota, M.

    2012-12-01

    Seven major creeks exist within the City of Oakland, California. These creeks all flow in the southwest direction from forested hills down through densely populated streets where they become susceptible to urban runoff. Lion Creek has been diverted to engineered channels and underground culverts and runs directly under our school (Roots International) before flowing into the San Leandro Bay. One branch of the creek begins near an abandoned sulfur mine. Previous studies have shown that extremely high levels of lead, arsenic and iron exist in this portion of the creek due to acid mine drainage. In this study +2 valence heavy metals concentration data was obtained from samples collected from a segment of the creek located approximately 2.8 miles downstream from the mine. Concentrations in samples collected at three different sites along this segment ranged between 50 ppb and 100 ppb. We hypothesize that these levels are related to the high concentration of +2 valence heavy metals at the mining site. To test this hypothesis, we have obtained samples from various locations along the roughly 3.75 miles of Lion Creek that are used to assess changes in heavy metals concentration levels from the mining site to the San Leandro Bay.

  16. Ligand-hole localization in oxides with unusual valence Fe

    PubMed Central

    Chen, Wei-Tin; Saito, Takashi; Hayashi, Naoaki; Takano, Mikio; Shimakawa, Yuichi

    2012-01-01

    Unusual high-valence states of iron are stabilized in a few oxides. A-site-ordered perovskite-structure oxides contain such iron cations and exhibit distinct electronic behaviors at low temperatures, e.g. charge disproportionation (4Fe4+ → 2Fe3+ + 2Fe5+) in CaCu3Fe4O12 and intersite charge transfer (3Cu2+ + 4Fe3.75+ → 3Cu3+ + 4Fe3+) in LaCu3Fe4O12. Here we report the synthesis of solid solutions of CaCu3Fe4O12 and LaCu3Fe4O12 and explain how the instabilities of their unusual valence states of iron are relieved. Although these behaviors look completely different from each other in simple ionic models, they can both be explained by the localization of ligand holes, which are produced by the strong hybridization of iron d and oxygen p orbitals in oxides. The localization behavior in the charge disproportionation of CaCu3Fe4O12 is regarded as charge ordering of the ligand holes, and that in the intersite charge transfer of LaCu3Fe4O12 is regarded as a Mott transition of the ligand holes. PMID:22690318

  17. Ignoring real faces: effects of valence, threat, and salience.

    PubMed

    Blagrove, Elisabeth; Watson, Derrick G

    2014-04-01

    Facial stimuli have been shown to accrue a special status within visual processing, particularly when attention is prioritized to one face over another on the basis of affective content. This has been examined in relation to the ability of faces to guide or hold attention, or to resist attentional suppression. Previous work has shown that schematic faces can only be partially ignored and that the emotional valence of to-be-ignored faces has little effect. Given recent debates concerning the use of schematic faces, here we examined the ease with which photorealistic faces could be ignored. Although we found evidence of a partial preview benefit for these stimuli, the findings were complex, with stimulus salience, valence, and threat content interacting to affect both the strength of the benefit and target detection efficiency (Exps. 1-3). Experiment 4 then clarified the effects of physical salience and perceived stimulus similarity in the previous experiments, demonstrating that a combination of these factors is likely to account for the search patterns observed. PMID:24435898

  18. Tunable topological valence in nematic shells on spherocylindrical colloidal particles

    NASA Astrophysics Data System (ADS)

    de Oliveira, E. J. L.; de Oliveira, I. N.; Lyra, M. L.; Mirantsev, L. V.

    2016-01-01

    We perform molecular dynamics simulations of the orientational ordering on nematic shells delimited by spherocylindrical nanoscopic colloidal particles. We show that under conditions of degenerate planar anchoring, the equilibrium director field structure in these shells exhibits pairs of +1 /2 topological defects at the poles of spherical cups in the absence of an external electric field. In addition, a certain number of pairs of ±1 /2 defects occurs on the spherical cups far from the poles, thus resulting in a total of eight valence spots. A strong field applied along the main spherocylindrical axis removes the ±1 /2 defect pairs while it coalesces the polar ones into a single +1 topological defect. A strong transverse field destroys all defects on the spherical cups but generates four +1 /2 defects in the cylindrical part. Therefore, an external field can be used to control the number of valence centers in spherocylindrical nematic shells, thus unveiling their capability of acting as multivalent building blocks for nanophotonic devices.

  19. Intracranial markers of emotional valence processing and judgments in music.

    PubMed

    Omigie, Diana; Dellacherie, Delphine; Hasboun, Dominique; Clément, Sylvain; Baulac, Michel; Adam, Claude; Samson, Séverine

    2015-01-01

    The involvement of the amygdala and orbitofrontal cortex in the processing of valenced stimuli is well established. However, less is known about the extent to which activity in these regions reflects a stimulus' physical properties, the individual subjective experience it evokes, or both. We recorded cortical electrical activity from five epileptic patients implanted with depth electrodes for presurgical evaluation while they rated "consonant" and "dissonant" musical chords using a "pleasantness" scale. We compared the pattern of responses in the amygdala and orbitofrontal cortex when trials were sorted by pleasantness judgments relative to when they were sorted by the acoustic properties known to influence emotional reactions to musical chords. This revealed earlier differential activity in the amygdala in the physical properties-based, relative to in the judgment-based, analyses. Thus, our results demonstrate that the amygdala has, first and foremost, a high initial sensitivity to the physical properties of valenced stimuli. The finding that differentiations in the amygdala based on pleasantness ratings had a longer latency suggests that in this structure, mediation of emotional judgment follows accumulation of sensory information. This is in contrast to the orbitofrontal cortex where sensitivity to sensory information did not precede differentiation based on affective judgments. PMID:25496511

  20. An ecological valence theory of human color preference

    PubMed Central

    Palmer, Stephen E.; Schloss, Karen B.

    2010-01-01

    Color preference is an important aspect of visual experience, but little is known about why people in general like some colors more than others. Previous research suggested explanations based on biological adaptations [Hurlbert AC, Ling YL (2007) Curr Biol 17:623–625] and color-emotions [Ou L-C, Luo MR, Woodcock A, Wright A (2004) Color Res Appl 29:381–389]. In this article we articulate an ecological valence theory in which color preferences arise from people’s average affective responses to color-associated objects. An empirical test provides strong support for this theory: People like colors strongly associated with objects they like (e.g., blues with clear skies and clean water) and dislike colors strongly associated with objects they dislike (e.g., browns with feces and rotten food). Relative to alternative theories, the ecological valence theory both fits the data better (even with fewer free parameters) and provides a more plausible, comprehensive causal explanation of color preferences. PMID:20421475

  1. Energetics and thermodynamic stability of the mixed valence ytterbium germanides.

    PubMed

    Balducci, G; Brutti, S; Ciccioli, A; Gigli, G; Palenzona, A; Pani, M

    2007-05-17

    The results of an experimental study concerning the thermodynamic stability of the Yb germanides, described as intermediate valence compounds, complemented by a computational investigation for the Yb3Ge5 compound are reported. These compounds belong to the rare earth (RE) tetrelides (tetrel = Si, Ge, i.e., group 14 elements), a class of intermetallic materials showing unusual and promising physical properties (giant magnetocaloric effect, magnetostriction, and magnetoresistence). The high-temperature decomposition reactions of the Yb-Ge intermediate phases were studied experimentally by means of the KEMS (Knudsen effusion mass spectrometry) and KEWL (Knudsen effusion weight loss) techniques. From the reaction enthalpies derived by measuring the Yb(g) decomposition pressures as a function of temperature, the heats of formation of five out of six of the intermediate phases in the Yb-Ge system were calculated. From the computational side, the stability of the Yb3Ge5(s) compound has been investigated by DFT-LCAO-B3LYP (density functional theory-linear combination of atomic orbitals-hybrid b3lyp exchange-correlation functional) first principles calculations deriving its equilibrium geometry and the enthalpy of formation at 0 K in relation to the intermediate valence state of Yb in the lattice. PMID:17444673

  2. Coupled-cluster based basis sets for valence correlation calculations

    NASA Astrophysics Data System (ADS)

    Claudino, Daniel; Gargano, Ricardo; Bartlett, Rodney J.

    2016-03-01

    Novel basis sets are generated that target the description of valence correlation in atoms H through Ar. The new contraction coefficients are obtained according to the Atomic Natural Orbital (ANO) procedure from CCSD(T) (coupled-cluster singles and doubles with perturbative triples correction) density matrices starting from the primitive functions of Dunning et al. [J. Chem. Phys. 90, 1007 (1989); ibid. 98, 1358 (1993); ibid. 100, 2975 (1993)] (correlation consistent polarized valence X-tuple zeta, cc-pVXZ). The exponents of the primitive Gaussian functions are subject to uniform scaling in order to ensure satisfaction of the virial theorem for the corresponding atoms. These new sets, named ANO-VT-XZ (Atomic Natural Orbital Virial Theorem X-tuple Zeta), have the same number of contracted functions as their cc-pVXZ counterparts in each subshell. The performance of these basis sets is assessed by the evaluation of the contraction errors in four distinct computations: correlation energies in atoms, probing the density in different regions of space via (-3 ≤ n ≤ 3) in atoms, correlation energies in diatomic molecules, and the quality of fitting potential energy curves as measured by spectroscopic constants. All energy calculations with ANO-VT-QZ have contraction errors within "chemical accuracy" of 1 kcal/mol, which is not true for cc-pVQZ, suggesting some improvement compared to the correlation consistent series of Dunning and co-workers.

  3. Coupled-cluster based basis sets for valence correlation calculations.

    PubMed

    Claudino, Daniel; Gargano, Ricardo; Bartlett, Rodney J

    2016-03-14

    Novel basis sets are generated that target the description of valence correlation in atoms H through Ar. The new contraction coefficients are obtained according to the Atomic Natural Orbital (ANO) procedure from CCSD(T) (coupled-cluster singles and doubles with perturbative triples correction) density matrices starting from the primitive functions of Dunning et al. [J. Chem. Phys. 90, 1007 (1989); ibid. 98, 1358 (1993); ibid. 100, 2975 (1993)] (correlation consistent polarized valence X-tuple zeta, cc-pVXZ). The exponents of the primitive Gaussian functions are subject to uniform scaling in order to ensure satisfaction of the virial theorem for the corresponding atoms. These new sets, named ANO-VT-XZ (Atomic Natural Orbital Virial Theorem X-tuple Zeta), have the same number of contracted functions as their cc-pVXZ counterparts in each subshell. The performance of these basis sets is assessed by the evaluation of the contraction errors in four distinct computations: correlation energies in atoms, probing the density in different regions of space via ⟨r(n)⟩ (-3 ≤ n ≤ 3) in atoms, correlation energies in diatomic molecules, and the quality of fitting potential energy curves as measured by spectroscopic constants. All energy calculations with ANO-VT-QZ have contraction errors within "chemical accuracy" of 1 kcal/mol, which is not true for cc-pVQZ, suggesting some improvement compared to the correlation consistent series of Dunning and co-workers. PMID:26979680

  4. Photonic band gap materials

    SciTech Connect

    Soukoulis, C.M. |

    1993-12-31

    An overview of the theoretical and experimental efforts in obtaining a photonic band gap, a frequency band in three-dimensional dielectric structures in which electromagnetic waves are forbidden, is presented.

  5. CSF oligoclonal banding

    MedlinePlus

    ... the cerebrospinal fluid (CSF). CFS is the clear fluid that flows in the space around the spinal cord and brain. Oligoclonal bands are proteins called immunoglobulins. The ... system. Oligoclonal bands may be a sign of multiple sclerosis.

  6. Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β-Ga2O3

    NASA Astrophysics Data System (ADS)

    Lovejoy, T. C.; Chen, Renyu; Yitamben, E. N.; Shutthanadan, V.; Heald, S. M.; Villora, E. G.; Shimamura, K.; Zheng, S.; Dunham, S. T.; Ohuchi, F. S.; Olmstead, M. A.

    2012-06-01

    Single crystals of transition metal (TM) doped β-Ga2O3, a wide gap semiconductor system of interest for transparent conductive oxide and diluted magnetic semiconductor applications, have been studied in the dilute, non-interacting limit (≤0.06 cation %). Based on optical absorption, particle induced x-ray emission, and Rutherford backscattering measurements, Mn does not incorporate as well as Cr, and Mn degrades the crystal quality. Using superconducting quantum interference device (SQuID) magnetometry, a Brillouin type paramagnetic magnetization is observed for Mn or Cr doped crystals with an effective number of Bohr magnetons per TM ion of 5.88 ± 0.1 or 3.95 ± 0.1, respectively. A trace ferromagnetic signal is consistent with a very small concentration of secondary phases in the Mn-doped crystal. The position of the edge in x-ray absorption near edge structure (XANES) measurements suggests that the Cr takes the 3+ valence, while a mixture of Mn2+ and Mn3+ are present; based on the absence of a prominent pre-edge feature in the XANES, both TM predominantly occupy an octahedral site in β-Ga2O3. Density functional theory (DFT) results, optical absorption and SQuID data are consistent with this assignment. While the Cr-doped crystal is conductive, the Mn-doped crystal is insulating, which is consistent with the Mn2+/Mn3+ mixed valence, assuming the Fermi level is pinned mid-gap at the Mn 2+/3+ transition level, which is predicted by DFT to be 1.8 eV above the valence band maximum.

  7. A continuous mapping between space and valence with left- and right-handers.

    PubMed

    Freddi, Sébastien; Brouillet, Thibaut; Cretenet, Joël; Heurley, Loïc P; Dru, Vincent

    2016-06-01

    In this research, we examined whether emotional valence could correspond to a continuous lateral bias in space, according to a mental metaphor that establishes the mapping between a concrete domain (space) and an abstract one (valence). Because acting with one's dominant hand is associated with fluency and positive valence (the bodily specificity hypothesis, or BSH), we asked strong right- and left-handers to perform two spatial location tasks using emotional faces with seven levels of valence. We hypothesized and showed through two studies that, according to the BSH, extreme valenced stimuli (as compared to moderate and weak ones) would be located more at the extremity of a horizontal line, according to the correspondences between handedness and the different valences of the stimuli. This research establishes that spatial and continuous mapping of emotions was obtained while controlling for motivational direction. PMID:26428669

  8. A Time-Based Account of the Perception of Odor Objects and Valences

    PubMed Central

    Olofsson, Jonas K.; Bowman, Nicholas E.; Khatibi, Katherine; Gottfried, Jay A.

    2013-01-01

    Is human odor perception guided by memory or emotion? Object-centered accounts predict that recognition of unique odor qualities precedes valence decoding. Valence-centered accounts predict the opposite: that stimulus-driven valence responses precede and guide identification. In a speeded response time study, participants smelled paired odors, presented sequentially, and indicated whether the second odor in each pair belonged to the same category as the first (object evaluation task) or whether the second odor was more pleasant than the first (valence evaluation task). Object evaluation was faster and more accurate than valence evaluation. In a complementary experiment, participants performed an identification task, in which they indicated whether an odor matched the previously presented word label. Responses were quicker for odors preceded by semantically matching, rather than nonmatching, word labels, but results showed no evidence of interference from valence on nonmatching trials. These results are in accordance with object-centered accounts of odor perception. PMID:22961773

  9. First-Order Structural Change Accompanied by Yb Valence Transition in YbInCu4

    NASA Astrophysics Data System (ADS)

    Tsutsui, Satoshi; Sugimoto, Kunihisa; Tsunoda, Ryoma; Hirose, Yusuke; Mito, Takeshi; Settai, Rikio; Mizumaki, Masaichiro

    2016-06-01

    A diffraction experiment using high-energy X-rays was carried out on YbInCu4. Below the Yb valence transition temperature, the splitting of Bragg peaks was detected in high-order reflections. No superlattice reflections accompanying the valence ordering were found below the transition temperature. These experimental findings indicate that a structural change from a cubic structure to a tetragonal structure without valence ordering occurs at the transition temperature. Such a structural change free from any valence ordering is difficult to understand only in terms of Yb valence degrees of freedom. This means that the structural change may be related to electronic symmetries such as quadrupolar degrees of freedom as well as to the change in Yb valence.

  10. Processing negative valence of word pairs that include a positive word.

    PubMed

    Itkes, Oksana; Mashal, Nira

    2016-09-01

    Previous research has suggested that cognitive performance is interrupted by negative relative to neutral or positive stimuli. We examined whether negative valence affects performance at the word or phrase level. Participants performed a semantic decision task on word pairs that included either a negative or a positive target word. In Experiment 1, the valence of the target word was congruent with the overall valence conveyed by the word pair (e.g., fat kid). As expected, response times were slower in the negative condition relative to the positive condition. Experiment 2 included target words that were incongruent with the overall valence of the word pair (e.g., fat salary). Response times were longer for word pairs whose overall valence was negative relative to positive, even though these word pairs included a positive word. Our findings support the Cognitive Primacy Hypothesis, according to which emotional valence is extracted after conceptual processing is complete. PMID:26008637

  11. Modulation of K2P2.1 and K2P10.1 K+ channel sensitivity to carvedilol by alternative mRNA translation initiation

    PubMed Central

    Kisselbach, J; Seyler, C; Schweizer, P A; Gerstberger, R; Becker, R; Katus, H A; Thomas, D

    2014-01-01

    Background and Purpose The β-receptor antagonist carvedilol blocks a range of ion channels. K2P2.1 (TREK1) and K2P10.1 (TREK2) channels are expressed in the heart and regulated by alternative translation initiation (ATI) of their mRNA, producing functionally distinct channel variants. The first objective was to investigate acute effects of carvedilol on human K2P2.1 and K2P10.1 channels. Second, we sought to study ATI-dependent modulation of K2P K+ current sensitivity to carvedilol. Experimental Approach Using standard electrophysiological techniques, we recorded currents from wild-type and mutant K2P2.1 and K2P10.1 channels in Xenopus oocytes and HEK 293 cells. Key Results Carvedilol concentration-dependently inhibited K2P2.1 channels (IC50,oocytes = 20.3 μM; IC50,HEK = 1.6 μM) and this inhibition was frequency-independent. When K2P2.1 isoforms generated by ATI were studied separately in oocytes, the IC50 value for carvedilol inhibition of full-length channels (16.5 μM) was almost 5-fold less than that for the truncated channel variant (IC50 = 79.0 μM). Similarly, the related K2P10.1 channels were blocked by carvedilol (IC50,oocytes = 24.0 μM; IC50,HEK = 7.6 μM) and subject to ATI-dependent modulation of drug sensitivity. Conclusions and Implications Carvedilol targets K2P2.1 and K2P10.1 K+ channels. This previously unrecognized mechanism supports a general role of cardiac K2P channels as antiarrhythmic drug targets. Furthermore, the work reveals that the sensitivity of the cardiac ion channels K2P2.1 and K2P10.1 to block was modulated by alternative mRNA translation initiation. PMID:25168769

  12. Extreme-Ultraviolet-Initated High-Order Harmonic Generation: Driving Inner-Valence Electrons Using Below-Threshold-Energy Extreme-Ultraviolet Light.

    PubMed

    Brown, A C; van der Hart, H W

    2016-08-26

    We propose a novel scheme for resolving the contribution of inner- and outer-valence electrons in extreme-ultraviolet (XUV)-initiated high-harmonic generation in neon. By probing the atom with a low-energy (below the 2s ionization threshold) ultrashort XUV pulse, the 2p electron is steered away from the core, while the 2s electron is enabled to describe recollision trajectories. By selectively suppressing the 2p recollision trajectories, we can resolve the contribution of the 2s electron to the high-harmonic spectrum. We apply the classical trajectory model to account for the contribution of the 2s electron, which allows for an intuitive understanding of the process. PMID:27610852

  13. Valence and inner-valence shell dissociative photoionization of CO in the 26-33 eV range. I. Ion-electron kinetic energy correlation and laboratory frame photoemission.

    PubMed

    Lebech, M; Houver, J C; Dowek, D

    2009-05-21

    The (V(A+), V(e), ê) vector correlation method, combining imaging and time-of-flight resolved electron-ion coincidence techniques, is used to probe dissociative photoionization (DPI) of CO induced by vacuum ultra violet linearly or circularly polarized synchrotron radiation in the 26-33 eV photon excitation energy range. It provides original information about both the photoionization dynamics of the CO molecule and the dissociation dynamics of the CO(+) molecular ions. The explored region corresponds to valence and inner-valence CO(+) ionic states, which involve doubly or multiply excited electronic configurations. In this paper I we identify up to 17 DPI reaction pathways by the position of the intermediate CO(+) molecular states in the Franck-Condon region and the (C(+) + O) or (O(+) + C) dissociation limits to which they correlate. For these processes we report the laboratory frame beta(C+/O+) and beta(e) asymmetry parameters as well as the relative branching ratios in selected binding energy bands. The I(chi,theta(e),phi(e)) molecular frame photoelectron angular distributions for selected PI processes will be reported in a companion paper II and compared with multichannel Schwinger configuration interaction ab initio calculations of these observables. PMID:19466836

  14. Bonds, bands and elasticity of smithsonite rock

    NASA Astrophysics Data System (ADS)

    Bouibes, A.; Zaoui, A.; Tunega, D.

    2013-07-01

    The objective here is to spread out in detail the various fundamental state properties of smithsonite rock (ZnCO3) for which the most intrinsic quantities remain still unknown. First-principles electronic structure calculations based on the density functional theory with the pseudopotential method were performed using diverse functionals. A number of mechanical quantities were evaluated such as bulk modulus, elastic constants, Young's and shear moduli, and transversal and longitudinal sound velocities (VS and VP). Fitting the compression data of smithsonite to the third-order Birch-Murnaghan equation of state gives a bulk modulus of 124.17 GPa, which reflects an important rigidity compared to the other carbonates. The analysis of the band structure reveals a band-gap energy of 3.36 eV that is close enough to some semiconductors rather than insulators. Finally the chemical bonding was analyzed through the electronic charge density of the total contributions of the valence bands. A pronounced charge transfer was observed towards the carbonate ion, indicating thereby the ionic character of ZnCO3.

  15. Flat Band Quastiperiodic Lattices

    NASA Astrophysics Data System (ADS)

    Bodyfelt, Joshua; Flach, Sergej; Danieli, Carlo

    2014-03-01

    Translationally invariant lattices with flat bands (FB) in their band structure possess irreducible compact localized flat band states, which can be understood through local rotation to a Fano structure. We present extension of these quasi-1D FB structures under incommensurate lattices, reporting on the FB effects to the Metal-Insulator Transition.

  16. Application of the Dimensional Reduction Formalism to Pb12[Li2(P2O7)2(P4O13)2](P4O13): a Phosphate Containing Three Types of Isolated P-O Groups.

    PubMed

    Zhang, Xiangyu; Wu, Hongping; Wang, Ying; Dong, Xiaoyu; Han, Shujuan; Pan, Shilie

    2016-08-01

    A new phosphate, Pb12[Li2(P2O7)2(P4O13)2](P4O13), containing three types of isolated polyphosphate anionic groups [P2O7], and two types of [P4O13] has been successfully synthesized by using Li2O as dimensional reduction agent to dismantle Pb3P4O13. The isolation of [P2O7] and two types of [P4O13] with different symmetries in the title compound mainly benefits from the large number and flexible coordination of the Pb(2+) cations. PMID:27399881

  17. Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

    SciTech Connect

    Dixit, V. K.; Kumar, Shailendra; Singh, S. D.; Khamari, S. K.; Kumar, R.; Tiwari, Pragya; Sharma, T. K.; Oak, S. M.; Phase, D. M.

    2014-03-03

    Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7 ± 0.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.

  18. Spot detection from MODIS imagery using 2P-CFAR

    NASA Astrophysics Data System (ADS)

    Ding, Xianwen; Li, Xiaofeng

    2015-12-01

    Oil spills are one of the major environmental concerns, especially in the coastal zones of the ocean. Satellite remote sensing imagery has proved to be a useful tool for monitoring oil spills in the marine environment. With its two daily acquisitions and the possibility to obtain near-real-time data free of charge, the Moderate Resolution Imaging Spectroradiometer (MODIS) shows interesting potential as such a cost-effective supplementary tool. Several researches on oil spill detection in MODIS imagery has been carried out for the past few years. Basically, oil spills were manually detected from MODIS imagery [1,2]. The disadvantage of the manual detection method is inefficient and subjective. Shi et al. proposed an oil spill detection method from MODIS imagery by using fuzzy cluster and texture feature extraction [3]. It works in an automatic manner and does not require any priori knowledge of occurrence or the spectral attributes of spills. But its efficiency in very near shore regions is limited. Chen and Zhao detected oil spills from the oil-water contrast ratio image by using a thresholding method [4].They found that the oil-water contrast ratio can be enhanced by replacing the original image with the ratio image of two different band ones in 400-800 nm. To obtain the oil-water contrast ratio image from the MODIS imagery, they selected the oil spill area and the background sea area and then calculated the mean radiance or emissivity value in those areas. By doing so, the automation and the accuracy of the method were reduced. Adamo et al. [5] and Kudryavtsev et al. [6] proposed physical methods for oil spill detection from MODIS imagery acquired in sunglint conditions. These two methods take imaging geometry into consideration and have the aid of other models or functions such as the Cox and Munk (1954) model [7],the CMOD4 model [8,9], the ECMWF (European Centre for Medium-Range Weather Forecasts) atmospheric model, and the transfer function, which increase the

  19. The splitting and oscillator strengths for the 2S/2/S-2p/2/P/0/ doublet in lithium-like sulfur. [during Skylab observed solar flares

    NASA Technical Reports Server (NTRS)

    Pegg, D. J.; Forester, J. P.; Elston, S. B.; Griffin, P. M.; Peterson, R. S.; Thoe, R. S.; Vane, C. R.; Sellin, I. A.; Groeneveld, K.-O.

    1977-01-01

    The beam-foil technique has been used to study the 2S(2)S-2p(2)P(0) doublet in S XIV. The results confirm the doublet splitting measured aboard Skylab during solar flare events. In addition, the oscillator strengths for the resonance transitions comprising this doublet have been measured and found to agree well with recent relativistic f-value calculations.

  20. Metal–insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal–insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  1. Efficient Water Electrolysis Using Ni2P as a Bifunctional Catalyst: Unveiling the Oxygen Evolution Catalytic Properties of Ni2P.

    PubMed

    Stern, Lucas-Alexandre; Hu, Xile

    2016-01-01

    The excellent bifunctional catalytic activity of nickel phosphide (Ni2P) for water splitting is reported. Ni2P, an active hydrogen evolving catalyst, is shown to be highly active for oxygen evolution. Only 290 mV of overpotential is required to generate a current density of 10 mA cm(-2) in 1 M KOH. Under oxygen evolving conditions, Ni2P undergoes structural modification to form a Ni2P/NiOx core-shell assembly, the catalytic active species. Ni2P is applied on both electrodes of an alkaline electrolyser and a current density of 10 mA cm(-2) is generated at 1.63 V. PMID:27131107

  2. 2s2 2p5-2s2p6 transitions in fluorinelike ions from Zr(31+) to Sn(41+)

    NASA Technical Reports Server (NTRS)

    Reader, Joseph; Brown, C. M.; Ekberg, J. O.; Feldman, U.; Seely, J. F.; Behring, W. E.

    1986-01-01

    Transitions of the type 2s2 2p5-2s2p6 have been observed in eight fluorinelike ions from Zr(31+) to Sn(41+). The spectra were produced by focusing light from the Nd:glass Omega laser at the University of Rochester onto solid targets and photographing the resultant plasmas with a 3-m grazing-incidence spectrograph. The identified transitions are in the region 24-60 A. The measured wavelengths are in good agreement with wavelengths calculated with the semiempirical formulas of Edlen (1983). Wavelengths for the 2s2 2p5 2P3/2-2P1/2 magnetic-dipole transitions are given for each ion.

  3. Enhancement of band gap and photoconductivity in gamma indium selenide due to swift heavy ion irradiation

    NASA Astrophysics Data System (ADS)

    Sreekumar, R.; Jayakrishnan, R.; Sudha Kartha, C.; Vijayakumar, K. P.; Khan, S. A.; Avasthi, D. K.

    2008-01-01

    γ-In2Se3 thin films prepared at different annealing temperatures ranging from 100to400°C were irradiated using 90MeV Si ions with a fluence of 2×1013ions/cm2. X-ray diffraction analysis proved that there is no considerable variation in structural properties of the films due to the swift heavy ion irradiation. However, photosensitivity and sheet resistance of the samples increased due to irradiation. It was observed that the sample, which had negative photoconductivity, exhibited positive photoconductivity, after irradiation. The negative photoconductivity was due to the combined effect of trapping of photoexcited electrons, at traps 1.42 and 1.26eV, above the valence band along with destruction of the minority carriers, created during illumination, through recombination. Photoluminescence study revealed that the emission was due to the transition to a recombination center, which was 180meV above the valence band. Optical absorption study proved that the defects present at 1.42 and 1.26eV were annealed out by the ion beam irradiation. This allowed photoexcited carriers to reach conduction band, which resulted in positive photoconductivity. Optical absorption study also revealed that the band gap of the material could be increased by ion beam irradiation. The sample prepared at 400°C had a band gap of 2eV and this increased to 2.8eV, after irradiation. The increase in optical band gap was attributed to the annihilation of localized defect bands, near the conduction and valence band edges, on irradiation. Thus, by ion beam irradiation, one could enhance photosensitivity as well as the optical band gap of γ-In2Se3, making the material suitable for applications such as window layer in solar cells.

  4. Optimization of thermoelectric efficiency in SnTe: the case for the light band.

    PubMed

    Zhou, Min; Gibbs, Zachary M; Wang, Heng; Han, Yemao; Xin, Caini; Li, Laifeng; Snyder, G Jeffrey

    2014-10-14

    p-Type PbTe is an outstanding high temperature thermoelectric material with zT of 2 at high temperatures due to its complex band structure which leads to high valley degeneracy. Lead-free SnTe has a similar electronic band structure, which suggests that it may also be a good thermoelectric material. However, stoichiometric SnTe is a strongly p-type semiconductor with a carrier concentration of about 1 × 10(20) cm(-3), which corresponds to a minimum Seebeck coefficient and zT. While in the case of p-PbTe (and n-type La3Te4) one would normally achieve higher zT by using high carrier density in order to populate the secondary band with higher valley degeneracy, SnTe behaves differently. It has a very light, upper valence band which is shown in this work to provide higher zT than doping towards the heavier second band. Therefore, decreasing the hole concentration to maximize the performance of the light band results in higher zT than doping into the high degeneracy heavy band. Here we tune the electrical transport properties of SnTe by decreasing the carrier concentration with iodine doping, and increasing the carrier concentration with Gd doping or by making the samples Te deficient. A peak zT value of 0.6 at 700 K was obtained for SnTe0.985I0.015 which optimizes the light, upper valence band, which is about 50% higher than the other peak zT value of 0.4 for GdzSn1-zTe and SnTe1+y which utilize the high valley degeneracy secondary valence band. PMID:25162449

  5. Enhancement of band gap and photoconductivity in gamma indium selenide due to swift heavy ion irradiation

    SciTech Connect

    Sreekumar, R.; Jayakrishnan, R.; Sudha Kartha, C.; Vijayakumar, K. P.; Khan, S. A.; Avasthi, D. K.

    2008-01-15

    {gamma}-In{sub 2}Se{sub 3} thin films prepared at different annealing temperatures ranging from 100 to 400 deg. C were irradiated using 90 MeV Si ions with a fluence of 2x10{sup 13} ions/cm{sup 2}. X-ray diffraction analysis proved that there is no considerable variation in structural properties of the films due to the swift heavy ion irradiation. However, photosensitivity and sheet resistance of the samples increased due to irradiation. It was observed that the sample, which had negative photoconductivity, exhibited positive photoconductivity, after irradiation. The negative photoconductivity was due to the combined effect of trapping of photoexcited electrons, at traps 1.42 and 1.26 eV, above the valence band along with destruction of the minority carriers, created during illumination, through recombination. Photoluminescence study revealed that the emission was due to the transition to a recombination center, which was 180 meV above the valence band. Optical absorption study proved that the defects present at 1.42 and 1.26 eV were annealed out by the ion beam irradiation. This allowed photoexcited carriers to reach conduction band, which resulted in positive photoconductivity. Optical absorption study also revealed that the band gap of the material could be increased by ion beam irradiation. The sample prepared at 400 deg. C had a band gap of 2 eV and this increased to 2.8 eV, after irradiation. The increase in optical band gap was attributed to the annihilation of localized defect bands, near the conduction and valence band edges, on irradiation. Thus, by ion beam irradiation, one could enhance photosensitivity as well as the optical band gap of {gamma}-In{sub 2}Se{sub 3}, making the material suitable for applications such as window layer in solar cells.

  6. Band-engineered SrTiO{sub 3} nanowires for visible light photocatalysis

    SciTech Connect

    Fu, Q.; He, T.; Li, J. L.; Yang, G. W.

    2012-11-15

    We have theoretically investigated the structural, electronic, and optical properties of perovskite SrTiO{sub 3} nanowires for use in visible light photocatalytic applications using pseudopotential density-functional theory calculations. The electronic structure calculations show that the band gap is modified in the SrTiO{sub 3} nanowires compared with that of the bulk. For TiO{sub 2}-terminated nanowires, the mid-band states induced by the combination of oxygen and strontium atoms on the surface lead to a shift in the valence band toward the conduction band without interference from the edge of the conduction band, which reduces the band gap. On the contrary, the electronic states induced by the combination of oxygen and strontium atoms on the surface of SrO-terminated nanowires lead to a shift in the conduction band toward the valence band. The calculated optical results indicate that the absorption edge of the nanowires shift towards the red-light region. These theoretical results suggest that perovskite SrTiO{sub 3} nanowires are promising candidates for use in visible light photocatalytic processes such as solar-assisted water splitting reactions.

  7. Band Alignment Engineering at Cu2O/ZnO Heterointerfaces.

    PubMed

    Siol, Sebastian; Hellmann, Jan C; Tilley, S David; Graetzel, Michael; Morasch, Jan; Deuermeier, Jonas; Jaegermann, Wolfram; Klein, Andreas

    2016-08-24

    Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work, we demonstrate how changes in deposition conditions can dramatically influence the functional properties of an interface, even within the same material system. The energy band alignment at the heterointerface between Cu2O and ZnO was studied using photoelectron spectroscopy with stepwise deposition of ZnO onto Cu2O and vice versa. A large variation of energy band alignment depending on the deposition conditions of the substrate and the film is observed, with valence band offsets in the range ΔEVB = 1.45-2.7 eV. The variation of band alignment is accompanied by the occurrence or absence of band bending in either material. It can therefore be ascribed to a pinning of the Fermi level in ZnO and Cu2O, which can be traced back to oxygen vacancies in ZnO and to metallic precipitates in Cu2O. The intrinsic valence band offset for the interface, which is not modified by Fermi level pinning, is derived as ΔEVB ≈ 1.5 eV, being favorable for solar cell applications. PMID:27452037

  8. Homo- and heterometal complexes of oxido-metal ions with a triangular [V(V)O-MO-V(V)O] [M = V(IV) and Re(V)] core: reporting mixed-oxidation oxido-vanadium(V/IV/V) compounds with valence trapped structures.

    PubMed

    Bhattacharya, Kisholoy; Maity, Manoranjan; Abtab, Sk Md Towsif; Majee, Mithun Chandra; Chaudhury, Muktimoy

    2013-08-19

    A new family of trinuclear homo- and heterometal complexes with a triangular [V(V)O-MO-V(V)O] (M = V(IV), 1 and 2; Re(V), 3] all-oxido-metal core have been synthesized following a single-pot protocol using compartmental Schiff-base ligands, N,N'-bis(3-hydroxysalicylidene)-diiminoalkanes/arene (H4L(1)-H4L(3)). The upper compartment of these ligands with N2O2 donor combination (Salen-type) contains either a V(IV) or a Re(V) center, while the lower compartment with O4 donor set accommodates two V(V) centers, stabilized by a terminal and a couple of bridging methoxido ligands. The compounds have been characterized by single-crystal X-ray diffraction analyses, which reveal octahedral geometry for all three metal centers in 1-3. Compound 1 crystallizes in a monoclinic space group P2(1)/c, while both 2 and 3 have more symmetric structures with orthorhombic space group Pnma that renders the vanadium(V) centers in these compounds exactly identical. In DMF solution, compound 1 displays an 8-line EPR at room temperature with and values of 1.972 and 86.61 × 10(-4) cm(-1), respectively. High-resolution X-ray photoelectron spectrum (XPS) of this compound shows a couple of bands at 515.14 and 522.14 eV due to vanadium 2p(3/2) and 2p(1/2) electrons in the oxidation states +5 and +4, respectively. All of these, together with bond valence sum (BVS) calculation, confirm the trapped-valence nature of mixed-oxidation in compounds 1 and 2. Electrochemically, compound 1 undergoes two one-electron oxidations at E(1/2) = 0.52 and 0.83 V vs Ag/AgCl reference. While the former is due to a metal-based V(IV/V) oxidation, the latter one at higher potential is most likely due to a ligand-based process involving one of the catecholate centers. A larger cavity size in the upper compartment of the ligand H4L(3) is spacious enough to accommodate Re(V) with larger size to generate a rare type of all-oxido heterotrimetallic compound (3) as established by X-ray crystallography. PMID:23898782

  9. Band structure of core-shell semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Pistol, Mats-Erik; Pryor, Craig

    2009-03-01

    We present band structures of strained core-shell nanowires composed of zincblende III-V (binary) semiconductors. We consider all combinations of AlN, GaN, InN, and all combinations of AlP, GaP, AlAs, GaAs, InP, InAs, AlSb, GaSb, and InSb. We compute the γ- and X-conduction band minima as well as the valence band maximum, all as functions of the core and shell radii. The calculations were performed using continuum elasticity theory for the strain, eight-band strain-dependent k.p theory for the γ-point energies, and single band approximation for the X-point conduction minima. We identify structures with type-I, type-II and type-III band alignment, as well as systems in which one material becomes metallic due to a negative band-gap. We identify structures that may support exciton crystals with and without photoexcitation. We have also computed the effective masses, from which the confinement energy may be estimated. All the results [Pistol and Pryor, Phys. Rev. B 78, 115319] are available in graphical and tabular form at www.semiconductor.physics.uiowa.edu

  10. Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

    SciTech Connect

    Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; Jiang, Chao; Stanek, Christopher R.

    2015-11-24

    Complex doping schemes in R3Al5O12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimum (CBM) or valence-band maximum (VBM). We consider two sets of compositions based on Lu3B5O12 where B is Al, Ga, In, As, and Sb, and R3Al5O12, where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. Furthermore, this approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.

  11. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

    NASA Astrophysics Data System (ADS)

    Batool, Z.; Hild, K.; Hosea, T. J. C.; Lu, X.; Tiedje, T.; Sweeney, S. J.

    2012-06-01

    The GaBixAs1-x bismide III-V semiconductor system remains a relatively underexplored alloy particularly with regards to its detailed electronic band structure. Of particular importance to understanding the physics of this system is how the bandgap energy Eg and spin-orbit splitting energy Δo vary relative to one another as a function of Bi content, since in this alloy it becomes possible for Δo to exceed Eg for higher Bi fractions, which occurrence would have important implications for minimising non-radiative Auger recombination losses in such structures. However, this situation had not so far been realised in this system. Here, we study a set of epitaxial layers of GaBixAs1-x (2.3% ≤ x ≤ 10.4%), of thickness 30-40 nm, grown compressively strained onto GaAs (100) substrates. Using room temperature photomodulated reflectance, we observe a reduction in Eg, together with an increase in Δo, with increasing Bi content. In these strained samples, it is found that the transition energy between the conduction and heavy-hole valence band edges is equal with that between the heavy-hole and spin-orbit split-off valence band edges at ˜9.0 ± 0.2% Bi. Furthermore, we observe that the strained valence band heavy-hole/light-hole splitting increases with Bi fraction at a rate of ˜15 (±1) meV/Bi%, from which we are able to deduce the shear deformation potential. By application of an iterative strain theory, we decouple the strain effects from our experimental measurements and deduce Eg and Δo of free standing GaBiAs; we find that Δo indeed does come into resonance with Eg at ˜10.5 ± 0.2% Bi. We also conclude that the conduction/valence band alignment of dilute-Bi GaBiAs on GaAs is most likely to be type-I.

  12. Skin-depth lattice strain, core-level trap depression and valence charge polarization of Al surfaces

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Bo, Maolin; Liu, Yonghui; Guo, Yongling; Wang, Haibin; Yue, Jian; Huang, Yongli

    2016-01-01

    Clarifying the origin for surface core-level shift (SCLS) and gaining quantitative information regarding the coordination-resolved local strain, binding energy (BE) shift and cohesive energy change have been a challenge. Here, we show that a combination of the bond order-length-strength (BOLS) premise, X-ray photoelectron spectroscopy (XPS) and the ab initio density functional theory (DFT) calculations of aluminum (Al) 2p3/2 energy shift of Al surfaces has enabled us to derive such information, namely, (i) the 2p3/2 energy of an isolated Al atom (72.146 ± 0.003eV) and its bulk shift (0.499 eV); (ii) the skin lattice contracts by up to 12.5% and the BE density increases by 70%; and (iii) the cohesive energy drops up to 38%. It is affirmed that the shorter and stronger bonds between under-coordinated atoms provide a perturbation to the Hamiltonian and hence lead to the local strain, quantum entrapment and valence charge polarization. Findings should help in understanding the phenomena of surface pre-melting and skin-high elasticity, in general.

  13. Band gap engineering via doping: A predictive approach

    SciTech Connect

    Andriotis, Antonis N.; Menon, Madhu

    2015-03-28

    We employ an extension of Harrison's theory at the tight binding level of approximation to develop a predictive approach for band gap engineering involving isovalent doping of wide band gap semiconductors. Our results indicate that reasonably accurate predictions can be achieved at qualitative as well as quantitative levels. The predictive results were checked against ab initio ones obtained at the level of DFT/SGGA + U approximation. The minor disagreements between predicted and ab initio results can be attributed to the electronic processes not incorporated in Harrison's theory. These include processes such as the conduction band anticrossing [Shan et al., Phys. Rev. Lett. 82, 1221 (1999); Walukiewicz et al., Phys. Rev. Lett. 85, 1552 (2000)] and valence band anticrossing [Alberi et al., Phys. Rev. B 77, 073202 (2008); Appl. Phys. Lett. 92, 162105 (2008); Appl. Phys. Lett. 91, 051909 (2007); Phys. Rev. B 75, 045203 (2007)], as well as the multiorbital rehybridization. Another cause of disagreement between the results of our predictive approach and the ab initio ones is shown to be the result of the shift of Fermi energy within the impurity band formed at the edge of the valence band maximum due to rehybridization. The validity of our approach is demonstrated with example applications for the systems GaN{sub 1−x}Sb{sub x}, GaP{sub 1−x}Sb{sub x}, AlSb{sub 1−x}P{sub x}, AlP{sub 1−x}Sb{sub x}, and InP{sub 1−x}Sb{sub x}.

  14. Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

    NASA Astrophysics Data System (ADS)

    Padilla, J. L.; Palomares, A.; Alper, C.; Gámiz, F.; Ionescu, A. M.

    2016-01-01

    In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

  15. Systems genetics analyses predict a transcription role for P2P-R: Molecular confirmation that P2P-R is a transcriptional co-repressor

    PubMed Central

    2010-01-01

    Background The 250 kDa P2P-R protein (also known as PACT and Rbbp6) was cloned over a decade ago and was found to bind both the p53 and Rb1 tumor suppressor proteins. In addition, P2P-R has been associated with multiple biological functions, such as mitosis, mRNA processing, translation and ubiquitination. In the current studies, the online GeneNetwork system was employed to further probe P2P-R biological functions. Molecular studies were then performed to confirm the GeneNetwork evaluations. Results GeneNetwork and associated gene ontology links were used to investigate the coexpression of P2P-R with distinct functional sets of genes in an adipocyte genetic reference panel of HXB/BXH recombinant strains of rats and an eye genetic reference panel of BXD recombinant inbred strains of mice. The results establish that biological networks of 75 and 135 transcription-associated gene products that include P2P-R are co-expressed in a genetically-defined manner in rat adipocytes and in the mouse eye, respectively. Of this large set of transcription-associated genes, >10% are associated with hormone-mediated transcription. Since it has been previously reported that P2P-R can bind the SRC-1 transcription co-regulatory factor (steroid receptor co-activator 1, [Ncoa1]), the possible effects of P2P-R on estrogen-induced transcription were evaluated. Estrogen-induced transcription was repressed 50-70% by the transient transfection of P2P-R plasmid constructs into four different cell types. In addition, knockdown of P2P-R expression using an antisense oligonucleotide increased estrogen-mediated transcription. Co-immunoprecipitation assays confirmed that P2P-R interacts with SRC-1 and also demonstrated that P2P-R interacts with estrogen receptor α. Conclusions The findings presented in this study provide strong support for the value of systems genetics, especially GeneNetwork, in discovering new functions of genes that can be confirmed by molecular analysis. More specifically

  16. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    NASA Astrophysics Data System (ADS)

    Yastrubchak, O.; Wosinski, T.; Gluba, L.; Andrearczyk, T.; Domagala, J. Z.; Żuk, J.; Sadowski, J.

    2014-01-01

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  17. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    SciTech Connect

    Yastrubchak, O. Gluba, L.; Żuk, J.; Wosinski, T. Andrearczyk, T.; Domagala, J. Z.; Sadowski, J.

    2014-01-07

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  18. Band alignment of ultra-thin hetero-structure ZnO/TiO{sub 2} junction

    SciTech Connect

    Shen, Kai; Wu, Kunjie; Wang, Deliang

    2014-03-01

    Graphical abstract: - Highlights: • Band alignment at the ZnO/TiO{sub 2} hetero-structural interface with different ZnO coating thickness was studied. • The valence band offset was decreased with increased ZnO coating layer thickness. • The interface dipole was responsible for the decreased band offset. - Abstract: The band alignment at the ZnO/TiO{sub 2} hetero-structure interface was measured by high resolution X-ray photoelectron spectroscopy. The valence band offset (E{sub ZnO}−E{sub TiO{sub 2}}){sub Valence} was linearly changed from 0.27 to 0.01 eV at the interface with increased ZnO coating thickness from 0.7 to 7 nm. The interface dipole presented at the ZnO/TiO{sub 2} interface was responsible for the decreased band offset. The band alignment of the ZnO/TiO{sub 2} heterojunction is a type II alignment.

  19. Expectation modulates neural representations of valence throughout the human brain.

    PubMed

    Ramayya, Ashwin G; Pedisich, Isaac; Kahana, Michael J

    2015-07-15

    The brain's sensitivity to unexpected gains or losses plays an important role in our ability to learn new behaviors (Rescorla and Wagner, 1972; Sutton and Barto, 1990). Recent work suggests that gains and losses are ubiquitously encoded throughout the human brain (Vickery et al., 2011), however, the extent to which reward expectation modulates these valence representations is not known. To address this question, we analyzed recordings from 4306 intracranially implanted electrodes in 39 neurosurgical patients as they performed a two-alternative probability learning task. Using high-frequency activity (HFA, 70-200 Hz) as an indicator of local firing rates, we found that expectation modulated reward-related neural activity in widespread brain regions, including regions that receive sparse inputs from midbrain dopaminergic neurons. The strength of unexpected gain signals predicted subjects' abilities to encode stimulus-reward associations. Thus, neural signals that are functionally related to learning are widely distributed throughout the human brain. PMID:25937489

  20. Quantum phase transitions around the staggered valence-bond solid

    SciTech Connect

    Xu Cenke; Balents, Leon

    2011-07-01

    Motivated by recent numerical results, we study the quantum phase transitions between Z{sub 2} spin-liquid, Neel-ordered, and various valence-bond solid (VBS) states on the honeycomb and square lattices, with emphasis on the staggered VBS. In contrast to the well-understood columnar VBS order, the staggered VBS is not described by an XY-order parameter with Z{sub N} anisotropy close to these quantum phase transitions. Instead, we demonstrate that on the honeycomb lattice, the staggered VBS is more appropriately described as an O(3)- or CP(2)-order parameter with cubic anisotropy, while on the square lattice it is described by an O(4)- or CP(3)-order parameter.

  1. Valence quark polarization in the nucleon and the deuteron data

    NASA Astrophysics Data System (ADS)

    Arash, Firooz; Taghavi-Shahri, Fatemeh

    2008-10-01

    Within the framework of the so-called valon model, we argue that a substantial part of the nucleon spin, about 40%, is carried by the polarized valence quarks. The remaining is the result of cancelations between gluon polarization and the orbital angular momentum, where the gluon polarization is the dominant one. It is shown that the sea quark contributions to the spin of any hadron is simply marginal and consistent with zero. Our findings point to a substantially smaller value for a8 than inferred from hyperon β decay, suggesting that full SU (3) symmetric assumption needs to be reconsidered. New and emerging experimental data tend to support this finding. Finally, we show that within the model presented here the experimental data on the polarized structure functions g1p,n,d are reproduced.

  2. Incautiously Optimistic: Positively-Valenced Cognitive Avoidance in Adult ADHD

    PubMed Central

    Knouse, Laura E.; Mitchell, John T.

    2015-01-01

    Clinicians who conduct cognitive-behavioral therapy (CBT) targeting attention-deficit/hyperactivity disorder (ADHD) in adulthood have noted that their patients sometimes verbalize overly positive automatic thoughts and set overly optimistic goals. These cognitions are frequently related to failure to engage in compensatory behavioral strategies emphasized in CBT. In this paper, we offer a functional analysis of this problematic pattern, positively-valenced cognitive avoidance, and suggest methods for addressing it within CBT for adult ADHD. We propose that maladaptive positive cognitions function to relieve aversive emotions in the short-term and are therefore negatively reinforced but that, in the long-term, they are associated with decreased likelihood of active coping and increased patterns of behavioral avoidance. Drawing on techniques from Behavioral Activation (BA), we offer a case example to illustrate these concepts and describe step-by-step methods for clinicians to help patients recognize avoidant patterns and engage in more active coping. PMID:25908901

  3. The application of cholesky decomposition in valence bond calculation.

    PubMed

    Gong, Xiping; Chen, Zhenhua; Wu, Wei

    2016-09-01

    The Cholesky decomposition (CD) technique, used to approximate the two-electron repulsion integrals (ERIs), is applied to the valence bond self-consistent field (VBSCF) method. Test calculations on ethylene, C2 n H2 n +2 , and C2 n H4 n -2 molecules (n = 1-7) show that the performance of the VBSCF method is much improved using the CD technique, and thus, the integral transformation from basis functions to VB orbitals is no longer the bottleneck in VBSCF calculations. The errors of the CD-based ERIs and of the total energy are controlled by the CD threshold, for which a value of 10(-6) ensures to control the total energy error within 10(-6) Hartree. © 2016 Wiley Periodicals, Inc. PMID:27377531

  4. Adsorption mechanism and valency of catechol-functionalized hyperbranched polyglycerols

    PubMed Central

    Krysiak, Stefanie; Wei, Qiang; Rischka, Klaus; Hartwig, Andreas; Haag, Rainer

    2015-01-01

    Summary Nature often serves as a model system for developing new adhesives. In aqueous environments, mussel-inspired adhesives are promising candidates. Understanding the mechanism of the extraordinarily strong adhesive bonds of the catechol group will likely aid in the development of adhesives. With this aim, we study the adhesion of catechol-based adhesives to metal oxides on the molecular level using atomic force microscopy (AFM). The comparison of single catechols (dopamine) with multiple catechols on hyperbranched polyglycerols (hPG) at various pH and dwell times allowed us to further increase our understanding. In particular, we were able to elucidate how to achieve strong bonds of different valency. It was concluded that hyperbranched polyglycerols with added catechol end groups are promising candidates for durable surface coatings. PMID:26150898

  5. The contribution of chromatic and achromatic valence to spectral saturation.

    PubMed

    Fuld, K

    1991-01-01

    The spectral efficiency of the achromatic and opponent chromatic channels was measured in three subjects by use of heterochromatic flicker photometry and hue cancellation, respectively. Heterochromatic brightness matching was also used for measuring achromatic spectral efficiency. These data were then used to predict spectral saturation based on Hurvich and Jameson's (1957; Psychological Review, 64, 384-404) opponent colors model. A standard color-naming procedure and a saturation matching technique were used for measures of spectral saturation. The ratio of saturation of short-wave to long-wave lights was found to be less than that predicted by the linear valence model. Allowing for nonlinearity at the opponent site of the yellow-blue channel plus a desaturating signal from the rods provided a good fit between data and theory. PMID:2017884

  6. Resonating Valence Bond states for low dimensional S=1 antiferromagnets

    NASA Astrophysics Data System (ADS)

    Liu, Zheng-Xin; Zhou, Yi; Ng, Tai-Kai

    2014-03-01

    We study S = 1 spin liquid states in low dimensions. We show that the resonating-valence-bond (RVB) picture of S = 1 / 2 spin liquid state can be generalized to S = 1 case. For S = 1 system, a many-body singlet (with even site number) can be decomposed into superposition of products of two-body singlets. In other words, the product states of two-body singlets, called the singlet pair states (SPSs), are over complete to span the Hilbert space of many-body singlets. Furthermore, we generalized fermionic representation and the corresponding mean field theory and Gutzwiller projected stats to S = 1 models. We applied our theory to study 1D anti-ferromagnetic bilinear-biquadratic model and show that both the ground states (including the phase transition point) and the excited states can be understood excellently well within the framework. Our method can be applied to 2D S = 1 antiferromagnets.

  7. The valence-fluctuating ground state of plutonium

    PubMed Central

    Janoschek, Marc; Das, Pinaki; Chakrabarti, Bismayan; Abernathy, Douglas L.; Lumsden, Mark D.; Lawrence, John M.; Thompson, Joe D.; Lander, Gerard H.; Mitchell, Jeremy N.; Richmond, Scott; Ramos, Mike; Trouw, Frans; Zhu, Jian-Xin; Haule, Kristjan; Kotliar, Gabriel; Bauer, Eric D.

    2015-01-01

    A central issue in material science is to obtain understanding of the electronic correlations that control complex materials. Such electronic correlations frequently arise because of the competition of localized and itinerant electronic degrees of freedom. Although the respective limits of well-localized or entirely itinerant ground states are well understood, the intermediate regime that controls the functional properties of complex materials continues to challenge theoretical understanding. We have used neutron spectroscopy to investigate plutonium, which is a prototypical material at the brink between bonding and nonbonding configurations. Our study reveals that the ground state of plutonium is governed by valence fluctuations, that is, a quantum mechanical superposition of localized and itinerant electronic configurations as recently predicted by dynamical mean field theory. Our results not only resolve the long-standing controversy between experiment and theory on plutonium’s magnetism but also suggest an improved understanding of the effects of such electronic dichotomy in complex materials. PMID:26601219

  8. Overlap populations, bond orders and valences for 'fuzzy' atoms

    NASA Astrophysics Data System (ADS)

    Mayer, I.; Salvador, P.

    2004-01-01

    Proper definitions are proposed to calculate interatomic overlap populations, bond order (multiplicity) indices and actual atomic valences from the results of ab initio quantum chemical calculations, in terms of 'fuzzy' atoms, i.e., such divisions of the three-dimensional physical space into atomic regions in which the regions assigned to the individual atoms have no sharp boundaries but exhibit a continuous transition from one to another. The results of test calculations are in agreement with the classical chemical notions, exhibit unexpectedly small basis sensitivity and do not depend too much on the selection of the weight function defining the actual division of the space into 'fuzzy' atomic regions. The scheme is applicable on both SCF and correlated levels of theory. A free program is available.

  9. Mesoscopic resonating valence bond system on a triple dot.

    PubMed

    Le Hur, Karyn; Recher, Patrik; Dupont, Emilie; Loss, Daniel

    2006-03-17

    We theoretically introduce a mesoscopic pendulum from a triple dot. The pendulum is fastened through a singly occupied dot (spin qubit). Two other strongly capacitively coupled islands form a double-dot charge qubit with one electron in excess oscillating between the two low-energy charge states (1,0) and (0,1). The triple dot is placed between two superconducting leads. Under realistic conditions, the main proximity effect stems from the injection of resonating singlet (valence) bonds on the triple dot. This gives rise to a Josephson current that is charge- and spin-dependent and, as a consequence, exhibits a distinct resonance as a function of the superconducting phase difference. PMID:16605773

  10. The valence-fluctuating ground state of plutonium

    SciTech Connect

    Janoschek, Marc; Das, Pinaki; Chakrabarti, Bismayan; Abernathy, Douglas L.; Lumsden, Mark D.; Lawrence, John M.; Thompson, Joe D.; Lander, Gerard H.; Mitchell, Jeremy N.; Richmond, Scott; Ramos, Mike; Trouw, Frans; Zhu, Jian -Xin; Haule, Kristjan; Kotliar, Gabriel; Bauer, Eric D.

    2015-07-10

    A central issue in material science is to obtain understanding of the electronic correlations that control complex materials. Such electronic correlations frequently arise because of the competition of localized and itinerant electronic degrees of freedom. Although the respective limits of well-localized or entirely itinerant ground states are well understood, the intermediate regime that controls the functional properties of complex materials continues to challenge theoretical understanding. We have used neutron spectroscopy to investigate plutonium, which is a prototypical material at the brink between bonding and nonbonding configurations. In addition, our study reveals that the ground state of plutonium is governed by valence fluctuations, that is, a quantum mechanical superposition of localized and itinerant electronic configurations as recently predicted by dynamical mean field theory. Our results not only resolve the long-standing controversy between experiment and theory on plutonium’s magnetism but also suggest an improved understanding of the effects of such electronic dichotomy in complex materials.

  11. Time flies with music whatever its emotional valence.

    PubMed

    Droit-Volet, Sylvie; Bigand, Emmanuel; Ramos, Danilo; Bueno, José Lino Oliveira

    2010-10-01

    The present study used a temporal bisection task to investigate whether music affects time estimation differently from a matched auditory neutral stimulus, and whether the emotional valence of the musical stimuli (i.e., sad vs. happy music) modulates this effect. The results showed that, compared to sine wave control music, music presented in a major (happy) or a minor (sad) key shifted the bisection function toward the right, thus increasing the bisection point value (point of subjective equality). This indicates that the duration of a melody is judged shorter than that of a non-melodic control stimulus, thus confirming that "time flies" when we listen to music. Nevertheless, sensitivity to time was similar for all the auditory stimuli. Furthermore, the temporal bisection functions did not differ as a function of musical mode. PMID:20674884

  12. Fullerene valence photoemission time delay near ionization cavity minima

    NASA Astrophysics Data System (ADS)

    Magrakvelidze, Maia; Anstine, Dylan; Dixit, Gopal; Madjet, Mohamed; Chakraborty, Himadri

    2015-05-01

    We investigate photoemission quantum phases and associated Wigner-Smith time delays for HOMO and HOMO-1 electrons of a C60 molecule using time-dependent local density approximation (TDLDA). The interference oscillations in C60 valence emissions produce series of minima whose energy separation depends on the molecular size. We show that the quantum phase associated with these minima exhibits rapid variations due to electron correlations, causing rich structures in the photoemission time delay. Besides fullerenes, the detection of photoemission minima in metal clusters suggests a possible universality of the phenomenon in cluster systems, or even quantum dots, that confine finite-sized electron gas. The work predicts a new research direction to apply attosecond metrology, such as RABITT, in the world of nanosystems. This work was supported by the U.S. National Science Foundation.

  13. Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells

    NASA Astrophysics Data System (ADS)

    Tanaka, Tooru; Miyabara, Masaki; Nagao, Yasuhiro; Saito, Katsuhiko; Guo, Qixin; Nishio, Mitsuhiro; Yu, Kin M.; Walukiewicz, Wladek

    2013-02-01

    Intermediate band (IB) solar cell structures based on ZnTeO highly mismatched alloy were examined to demonstrate a photocurrent induced by a two-photon excitation (TPE) process. Two types of the devices, with and without a blocking layer for the IB, are prepared. The device with a blocked IB exhibits small external quantum efficiency (EQE) in photon energy range in which electron transitions from valence band (VB) to IB take place, implying the electron accumulation in IB. The enhancement of EQE is observed in TPE experiments as a result of electron transition from VB to conduction band via IB.

  14. The use of bulk states to accelerate the band edge statecalculation of a semiconductor quantum dot

    SciTech Connect

    Vomel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques,Osni A.; Dongarra, Jack J.

    2006-05-10

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.

  15. Effect of variable valence impurities on the formation of bismuth-related optical centres in a silicate glass

    SciTech Connect

    Galagan, B I; Denker, B I; Lili Hu; Sverchkov, S E; Shulman, I L; Dianov, Evgenii M

    2012-10-31

    We have studied the effect of variable valence impurities (cerium and iron) on the formation of bismuth-related IR luminescence centres and the optical loss between 1000 and 1300 nm in a magnesium aluminosilicate glass. The results demonstrate that additional doping of the glass with ceria leads to effective bleaching in a wide spectral range, including the luminescence range of the bismuth centres. At the same time, ceria reduces the concentration of luminescence centres. Gamma irradiation of the glass bleached by cerium restores the luminescence centres but leads to a background loss in a wide spectral range. Iron is shown to be a very harmful impurity in bismuth-doped active media: even trace levels of iron prevent the formation of bismuth-related active centres in the glass and produce a strong, broad absorption band centred near 1 {mu}m. (luminescence of glasses)

  16. A density functional for core-valence correlation energy

    NASA Astrophysics Data System (ADS)

    Ranasinghe, Duminda S.; Frisch, Michael J.; Petersson, George A.

    2015-12-01

    A density functional, ɛCV-DFT(ρc, ρv), describing the core-valence correlation energy has been constructed as a linear combination of ɛLY Pcorr(ρc), ɛV WN5corr(ρc, ρv), ɛPBEcorr(ρc, ρv), ɛSlaterex(ρc, ρv), ɛHCTHex(ρc, ρv), ɛHFex(ρc, ρv), and F CV -DFT (" separators=" N i , Z i ) , a function of the nuclear charges. This functional, with 6 adjustable parameters, reproduces (±0.27 kcal/mol rms error) a benchmark set of 194 chemical energy changes including 9 electron affinities, 18 ionization potentials, and 167 total atomization energies covering the first- and second-rows of the periodic table. This is almost twice the rms error (±0.16 kcal/mol) obtained with CCSD(T)/MTsmall calculations, but less than half the rms error (±0.65 kcal/mol) obtained with MP2/GTlargeXP calculations, and somewhat smaller than the rms error (±0.39 kcal/mol) obtained with CCSD/MTsmall calculations. The largest positive and negative errors from ɛCV-DFT(ρc, ρv) were 0.88 and -0.75 kcal/mol with the set of 194 core-valence energy changes ranging from +3.76 kcal/mol for the total atomization energy of propyne to -9.05 kcal/mol for the double ionization of Mg. Evaluation of the ɛCV-DFT(ρc, ρv) functional requires less time than a single SCF iteration, and the accuracy is adequate for any model chemistry based on the CCSD(T) level of theory.

  17. A density functional for core-valence correlation energy.

    PubMed

    Ranasinghe, Duminda S; Frisch, Michael J; Petersson, George A

    2015-12-01

    A density functional, εCV-DFT(ρc, ρv), describing the core-valence correlation energy has been constructed as a linear combination of εLY P (corr)(ρc), εV WN5 (corr)(ρc, ρv), εPBE (corr)(ρc, ρv), εSlater (ex)(ρc, ρv), εHCTH (ex)(ρc, ρv), εHF (ex)(ρc, ρv), and FCV-DFTNi,Zi, a function of the nuclear charges. This functional, with 6 adjustable parameters, reproduces (±0.27 kcal/mol rms error) a benchmark set of 194 chemical energy changes including 9 electron affinities, 18 ionization potentials, and 167 total atomization energies covering the first- and second-rows of the periodic table. This is almost twice the rms error (±0.16 kcal/mol) obtained with CCSD(T)/MTsmall calculations, but less than half the rms error (±0.65 kcal/mol) obtained with MP2/GTlargeXP calculations, and somewhat smaller than the rms error (±0.39 kcal/mol) obtained with CCSD/MTsmall calculations. The largest positive and negative errors from εCV-DFT(ρc, ρv) were 0.88 and -0.75 kcal/mol with the set of 194 core-valence energy changes ranging from +3.76 kcal/mol for the total atomization energy of propyne to -9.05 kcal/mol for the double ionization of Mg. Evaluation of the εCV-DFT(ρc, ρv) functional requires less time than a single SCF iteration, and the accuracy is adequate for any model chemistry based on the CCSD(T) level of theory. PMID:26646873

  18. Observation of the Forbidden Magnetic Dipole Transition 6{sup 2}P{sub ½} --> 7{sup 2}P{sub ½} in Atomic Thallium

    DOE R&D Accomplishments Database

    Chu, S.

    1976-10-01

    A measurement of the 6{sup 2}P{sub ½} --> 7{sup 2}P{sub ½} forbidden magnetic dipole matrix element in atomic thallium is described. A pulsed, linearly polarized dye laser tuned to the transition frequency is used to excite the thallium vapor from the 6{sup 2}P{sub ½} ground state to the 7{sup 2}P{sub ½} excited state. Interference between the magnetic dipole M1 amplitude and a static electric field induced E1 amplitude results in an atomic polarization of the 7{sup 2}P{sub ½} state, and the subsequent circular polarization of 535 nm fluorescence. The circular polarization is seen to be proportional to / as expected, and measured for several transitions between hyperfine levels of the 6{sup 2}P{sub ½} and 7{sup 2}P{sub ½} states. The result is = -(2.11 +- 0.30) x 10{sup -5} parallel bar e parallel bar dirac constant/2mc, in agreement with theory.

  19. A Novel P2P traffic Prediction Algorithm Based on Hybrid Model

    NASA Astrophysics Data System (ADS)

    Zhi-jie, Han; Ru-chuan, Wang; Xiao-yang, Duan

    The increasing P2P network traffic on the Internet has leaded to the problem of network congestion. In the consequence of the diversification of the P2P traffic and protocol, research on the management of P2P traffic has had many problems needed to resolve. P2P traffic Prediction is kernel problem in the P2P traffic management. Based on the P2P traffic characters, this thesis present a P2P traffic model, gived a traffic prediction algorithm bases on wavelet-analysis, and proved the accuracy of the algorithm. Simulation has experiment figures that the algorithm a high prediction precision and superior real-time performance.

  20. Interfacial chemical bonding state and band alignment of CaF{sub 2}/hydrogen-terminated diamond heterojunction

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Cheng, S. H.; Imura, M.; Koide, Y.

    2013-03-28

    CaF{sub 2} films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF{sub 2}/H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF{sub 2}/H-diamond heterointerface. Valence and conductance band offsets of the CaF{sub 2}/H-diamond heterojunciton are determined to be 3.7 {+-} 0.2 and 0.3 {+-} 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF{sub 2}/H-diamond heterojunciton for the development of high power and high frequency field effect transistors.

  1. Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

    NASA Astrophysics Data System (ADS)

    Eneman, Geert; Roussel, Philippe; Brunco, David Paul; Collaert, Nadine; Mocuta, Anda; Thean, Aaron

    2016-08-01

    The conduction and valence band offsets between a strained silicon-germanium layer and a silicon-germanium substrate are reported for arbitrary substrate and channel crystal orientations. The offsets are calculated both for the case of biaxial stress, corresponding approximately to the stress state of a thin strained channel in a planar field-effect transistor (FET), and for uniaxial stress, which is the approximate stress state for strained channels in a FinFET configuration. Significant orientation dependence is found for the conduction band offset, overall leading to the strongest electron quantum confinement in biaxial-tensile stressed channels on {100}-oriented substrates, and uniaxial-tensile stressed channels in the ⟨100⟩ and ⟨110⟩ directions. For biaxially stressed layers on {111} substrates, the conduction band offset is significantly smaller than for {100} or {110} directions. For the valence band offset, the dependence on crystal orientation is found to be small.

  2. Dissociable Modulation of Overt Visual Attention in Valence and Arousal Revealed by Topology of Scan Path

    PubMed Central

    Ni, Jianguang; Jiang, Huihui; Jin, Yixiang; Chen, Nanhui; Wang, Jianhong; Wang, Zhengbo; Luo, Yuejia; Ma, Yuanye; Hu, Xintian

    2011-01-01

    Emotional stimuli have evolutionary significance for the survival of organisms; therefore, they are attention-grabbing and are processed preferentially. The neural underpinnings of two principle emotional dimensions in affective space, valence (degree of pleasantness) and arousal (intensity of evoked emotion), have been shown to be dissociable in the olfactory, gustatory and memory systems. However, the separable roles of valence and arousal in scene perception are poorly understood. In this study, we asked how these two emotional dimensions modulate overt visual attention. Twenty-two healthy volunteers freely viewed images from the International Affective Picture System (IAPS) that were graded for affective levels of valence and arousal (high, medium, and low). Subjects' heads were immobilized and eye movements were recorded by camera to track overt shifts of visual attention. Algebraic graph-based approaches were introduced to model scan paths as weighted undirected path graphs, generating global topology metrics that characterize the algebraic connectivity of scan paths. Our data suggest that human subjects show different scanning patterns to stimuli with different affective ratings. Valence salient stimuli (with neutral arousal) elicited faster and larger shifts of attention, while arousal salient stimuli (with neutral valence) elicited local scanning, dense attention allocation and deep processing. Furthermore, our model revealed that the modulatory effect of valence was linearly related to the valence level, whereas the relation between the modulatory effect and the level of arousal was nonlinear. Hence, visual attention seems to be modulated by mechanisms that are separate for valence and arousal. PMID:21494331

  3. Identifying Facial Emotions: Valence Specific Effects and an Exploration of the Effects of Viewer Gender

    ERIC Educational Resources Information Center

    Jansari, Ashok; Rodway, Paul; Goncalves, Salvador

    2011-01-01

    The valence hypothesis suggests that the right hemisphere is specialised for negative emotions and the left hemisphere is specialised for positive emotions (Silberman & Weingartner, 1986). It is unclear to what extent valence-specific effects in facial emotion perception depend upon the gender of the perceiver. To explore this question 46…

  4. Intrasubject Predictions of Occupational Preference: The Effect of Manipulating Components of the Valence Model

    ERIC Educational Resources Information Center

    Muchinsky, Paul M.; Taylor, M. Susan

    1976-01-01

    The purposes of this study were (1) to test whether the occupational preferences of senior psychology majors could be predicted using a within-subjects analysis of Vroom's model; (2) to examine the predictive validity of valence and instrumentality measures, and (3) to compare the predictive validity of the weighted and unweighted valence models.…

  5. Valence-Bond Concepts in Coordination Chemistry and the Nature of Metal-Metal Bonds.

    ERIC Educational Resources Information Center

    Pauling, Linus; Herman, Zelek S.

    1984-01-01

    Discusses the valence-bond method, applying it to some coordination compounds of metals, especially those involving metal-metal bonds. Suggests that transition metals can form as many as nine covalent bonds, permitting valence-theory to be extended to transition metal compounds in a more effective way than has been possible before. (JN)

  6. Effects of Emotional Valence and Arousal on Recollective and Nonrecollective Recall

    ERIC Educational Resources Information Center

    Gomes, Carlos F. A.; Brainerd, Charles J.; Stein, Lilian M.

    2013-01-01

    The authors investigated the effects of valence and arousal on memory using a dual-process model that quantifies recollective and nonrecollective components of recall without relying on metacognitive judgments to separate them. The results showed that valenced words increased reconstruction (a component of nonrecollective retrieval) relative to…

  7. Age influences the relation between subjective valence ratings and emotional word use during autobiographical memory retrieval.

    PubMed

    Ford, Jaclyn H; DiGirolamo, Marissa A; Kensinger, Elizabeth A

    2016-09-01

    Recent research reveals an age-related increase in positive autobiographical memory retrieval using a number of positivity measures, including valence ratings and positive word use. It is currently unclear whether the positivity shift in each of these measures co-occurs, or if age uniquely influences multiple components of autobiographical memory retrieval. The current study examined the correspondence between valence ratings and emotional word use in young and older adults' autobiographical memories. Positive word use in narratives was associated with valence ratings only in young adults' narratives. Older adults' narratives contained a consistent level of positive word use regardless of valence rating, suggesting that positive words and concepts may be chronically accessible to older adults during memory retrieval, regardless of subjective valence. Although a relation between negative word use in narratives and negative valence ratings was apparent in both young and older adults, it was stronger in older adults' narratives. These findings confirm that older adults do vary their word use in accordance with subjective valence, but they do so in a way that is different from young adults. The results also point to a potential dissociation between age-related changes in subjective valence and in positive word use. PMID:26274398

  8. Synchrotron Studies of Narrow Band and Low-Dimensional Materials. Final Report for July 1, 1990---December 31, 2002

    SciTech Connect

    Allen, J. W.

    2003-05-13

    This report summarizes a 12-year program of various kinds of synchrotron spectroscopies directed at the electronic structures of narrow band and low-dimensional materials that display correlated electron behaviors such as metal-insulator transitions, mixed valence, superconductivity, Kondo moment quenching, heavy Fermions, and non-Fermi liquid properties.

  9. Band Structure Asymmetry of Bilayer Graphene Revealed by Infrared Spectroscopy

    SciTech Connect

    Li, Z.Q.; Henriksen, E.A.; Jiang, Z.; Hao, Zhao; Martin, Michael C.; Kim, P.; Stormer, H.L.; Basov, Dimitri N.

    2008-12-10

    We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observe a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer and the next-nearest-neighbor interlayer coupling. From the conductivity data, the energy difference of the two sublattices and the interlayer coupling energy are directly determined.

  10. Absence of X-point band overlap in divalent hexaborides and variability of the surface chemical potential

    SciTech Connect

    Denlinger, Jonathan D.; Gweon, Gey-Hong; Mo, Sung-Kwan; Allen, James W.; Sarrao, John L.; Bianchi, Adrian D.; Fisk, Zachary

    2001-11-04

    Angle-resolved photoemission measurements of divalent hexaborides reveals a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap assumed in several models of their novel ferromagnetism. While the global ARPES band structure and gap size observed are consistent with the results of bulk-sensitive soft x-ray absorption and emission boron K-edge spectroscopy, the surface-sensitive photoemission measurements also show a variation with cation, surface and time of the position of the surface chemical potential in the band structure.

  11. Study of energy band discontinuity in NiZnO/ZnO heterostructure using X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Dewan, Sheetal; Tomar, Monika; Goyal, Anshu; Kapoor, A. K.; Tandon, R. P.; Gupta, Vinay

    2016-05-01

    A heterostructure based on ZnO and Ni doped ZnO (NiZnO) thin films has been prepared on c-plane sapphire substrate by pulsed laser deposition technique. X-ray photo electron spectroscopy has been utilized to study the energy band discontinuities, i.e., valence band offset ( Δ E v ) and conduction band offset ( Δ E c ) at the interface of NiZnO and ZnO thin films. A type-II band alignment is identified at the interface of prepared heterostructure from the computed data, which is attractive for the realization of efficient optoelectronic devices.

  12. Banded ion morphology

    SciTech Connect

    Frahm, R.A.

    1987-01-01

    Bands of ions have been observed at constant pitch angle by the Dynamics Explorer High- and Low-Altitude Plasma Instruments at auroral latitudes. The observed ion-dispersion pattern shows lower-energy ions toward the equatorward side of the band and higher-energy ions toward the poleward side of the band. Ion bands have their highest-energy flux at small pitch angles. The observed bands have been correlated with storm phase (by Dst) and substorm phase (by AE). Bands are more likely to occur during main-storm phase than during recovery storm phase. Substorm correlations are statistically significant, but there is a hint that most bands occur during substorm recovery phase. Two models have the potential of producing ion signatures that are similar to the band feature. They are the time-of-flight mechanism and the convective dispersion mechanism. Under a time-of-flight mechanism, ions are dispersed along a magnetic filed line with higher-energy particles outrunning lower energy particles. Ions are dispersed perpendicular to the magnetic field under convective dispersion. A time-of-flight effect does not explain the band energy-latitude dependence observed in the southern night or northern day very well, whereas the convective dispersion mechanism easily accomplishes this.

  13. Examining the role of emotional valence of mind wandering: All mind wandering is not equal.

    PubMed

    Banks, Jonathan B; Welhaf, Matthew S; Hood, Audrey V B; Boals, Adriel; Tartar, Jaime L

    2016-07-01

    To evaluate the role of emotional valence on the impact of mind wandering on working memory (WM) and sustained attention, we reanalyzed data from three independently conducted studies that examined the impact of stress on WM (Banks & Boals, 2016; Banks, Welhaf, & Srour, 2015) and sustained attention (Banks, Tartar, & Welhaf, 2014). Across all studies, participants reported the content of their thoughts at random intervals during the WM or sustained attention task. Thought probes in all studies included a core set of response options for task-unrelated thoughts (TUTs) that were negatively, positively, or neutrally emotionally valenced. In line with theories of emotional valenced stimuli on capture of attention, results suggest negatively valenced TUTs, but not positively valenced TUTs, were related to poorer WM and sustained attention in two studies. Neutral TUTs were related to poorer WM but not sustained attention performance. Implications for models of mind wandering are discussed. PMID:27310109

  14. Topologically distinct classes of valence-bond solid states with their parent Hamiltonians

    SciTech Connect

    Tu Honghao; Zhang Guangming; Xiang Tao; Liu Zhengxin; Ng Taikai

    2009-07-01

    We present a general method to construct one-dimensional translationally invariant valence-bond solid states with a built-in Lie group G and derive their matrix product representations. The general strategies to find their parent Hamiltonians are provided so that the valence-bond solid states are their unique ground states. For quantum integer-spin-S chains, we discuss two topologically distinct classes of valence-bond solid states: one consists of two virtual SU(2) spin-J variables in each site and another is formed by using two SO(2S+1) spinors. Among them, a spin-1 fermionic valence-bond solid state, its parent Hamiltonian, and its properties are discussed in detail. Moreover, two types of valence-bond solid states with SO(5) symmetries are further generalized and their respective properties are analyzed as well.

  15. Influence of emotional valence and arousal on the spread of activation in memory.

    PubMed

    Jhean-Larose, Sandra; Leveau, Nicolas; Denhière, Guy

    2014-11-01

    Controversy still persists on whether emotional valence and arousal influence cognitive activities. Our study sought to compare how these two factors foster the spread of activation within the semantic network. In a lexical decision task, prime words were varied depending on the valence (pleasant or unpleasant) or on the level of emotional arousal (high or low). Target words were carefully selected to avoid semantic priming effects, as well as to avoid arousing specific emotions (neutral). Three SOA durations (220, 420 and 720 ms) were applied across three independent groups. Results indicate that at 220 ms, the effect of arousal is significantly higher than the effect of valence in facilitating spreading activation while at 420 ms, the effect of valence is significantly higher than the effect of arousal in facilitating spreading activation. These findings suggest that affect is a sequential process involving the successive intervention of arousal and valence. PMID:24715543

  16. Fractional valency and kink conduction mechanism in quasi-one-dimensional molecular systems

    SciTech Connect

    Ovchinnikov, A.A.; Ukrainskii, T.I.

    1987-09-01

    The authors consider the connection between fractional valence and electrical conductivity of donor-acceptor molecular crystals for which one-dimensional anisotropy is characteristic and seek to answer the observation that donor-acceptor crystals with fractional valence display higher conductivity than those with integral valence by proving, using a Hamiltonian and a Wigner lattice for the crystal, that donor-acceptor molecular crystals with fractional valence have some additional degeneracy in the ground state and that this circumstance is responsible for the existence in such systems of electronic excitations of the kink type which, in the general case, carry a fractional charge and may provide high electrical conductivity. Their qualitative analysis of Wigner lattices for the real molecular crystals TTF-TCNQ and NMP-TCNQ, compared against organic semiconductors, shows that energy-degenerate structures exist for ionic valences of one half, one third, and two thirds.

  17. Valence fluctuations of europium in the boride Eu4Pd29+x B8

    NASA Astrophysics Data System (ADS)

    Gumeniuk, Roman; Schnelle, Walter; Ahmida, Mahmoud A.; Abd-Elmeguid, Mohsen M.; Kvashnina, Kristina O.; Tsirlin, Alexander A.; Leithe-Jasper, Andreas; Geibel, Christoph

    2016-03-01

    We synthesized a high-quality sample of the boride Eu4Pd29+x B8 (x  =  0.76) and studied its structural and physical properties. Its tetragonal structure was solved by direct methods and confirmed to belong to the Eu4Pd29B8 type. All studied physical properties indicate a valence fluctuating Eu state, with a valence decreasing continuously from about 2.9 at 5 K to 2.7 at 300 K. Maxima in the T dependence of the susceptibility and thermopower at around 135 K and 120 K, respectively, indicate a valence fluctuation energy scale on the order of 300 K. Analysis of the magnetic susceptibility evidences some inconsistencies when using the ionic interconfigurational fluctuation (ICF) model, thus suggesting a stronger relevance of hybridization between 4f and valence electrons compared to standard valence-fluctuating Eu systems.

  18. Identifying words that emerge into consciousness: Effects of word valence and unconscious previewing.

    PubMed

    Prioli, Simone C; Kahan, Todd A

    2015-09-01

    Words with negative valence capture attention and this increase in attentional resources typically enhances perceptual processing. Recently, data using continuous flash suppression (CFS) appear to contradict this. In prior research when Chinese words were unconsciously presented in CFS and contrast was raised until the word was identified, RTs to identify words with negative valence were slower than RTs to words with neutral valence. This result might be limited to situations where a logographic writing system is used and could reflect a type of cognitive aftereffect where previewing the word causes habituation. Data (N=60) indicate that results generalize from a logographic (Chinese) to an orthographic writing system (English). In addition, when words were previewed in CFS RTs were slowed for words with negative valence relative to words with neutral valence and this was reversed when words were shown binocularly. Implications for theories of unconscious word processing and cognitive aftereffects are discussed. PMID:25982055

  19. Valence fluctuations of europium in the boride Eu4Pd(29+x)B8.

    PubMed

    Gumeniuk, Roman; Schnelle, Walter; Ahmida, Mahmoud A; Abd-Elmeguid, Mohsen M; Kvashnina, Kristina O; Tsirlin, Alexander A; Leithe-Jasper, Andreas; Geibel, Christoph

    2016-03-23

    We synthesized a high-quality sample of the boride Eu4Pd(29+x)B8 (x  =  0.76) and studied its structural and physical properties. Its tetragonal structure was solved by direct methods and confirmed to belong to the Eu4Pd29B8 type. All studied physical properties indicate a valence fluctuating Eu state, with a valence decreasing continuously from about 2.9 at 5 K to 2.7 at 300 K. Maxima in the T dependence of the susceptibility and thermopower at around 135 K and 120 K, respectively, indicate a valence fluctuation energy scale on the order of 300 K. Analysis of the magnetic susceptibility evidences some inconsistencies when using the ionic interconfigurational fluctuation (ICF) model, thus suggesting a stronger relevance of hybridization between 4f and valence electrons compared to standard valence-fluctuating Eu systems. PMID:26895077

  20. Wide Band to ''Double Band'' upgrade

    SciTech Connect

    Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

    1988-06-01

    The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs.