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Sample records for 2p valence band

  1. Irradiation-induced degradation of PTB7 investigated by valence band and S 2p photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Darlatt, Erik; Muhsin, Burhan; Roesch, Roland; Lupulescu, Cosmin; Roth, Friedrich; Kolbe, Michael; Gottwald, Alexander; Hoppe, Harald; Richter, Mathias

    2016-08-01

    Monochromatic radiation with known absolute radiant power from an undulator at the electron storage ring Metrology Light Source (MLS) was used to irradiate PTB7 (a thieno[3, 4-b]thiophene-alt-benzodithiophene polymer) thin films at wavelengths (photon energies) of 185 nm (6.70 eV), 220 nm (5.64 eV), 300 nm (4.13 eV), 320 nm (3.88 eV), 356 nm (3.48 eV) and 675 nm (1.84 eV) under ultra-high vacuum conditions for the investigation of radiation-induced degradation effects. The characterization of the thin films is focused at ultraviolet photoelectron spectroscopy (UPS) of valence bands and is complemented by S 2p x-ray photoelectron spectroscopy (S 2p XPS) before and after the irradiation procedure. The radiant exposure was determined for each irradiation by means of photodiodes traceably calibrated to the international system of units SI. The valence band spectra show the strongest changes for the shortest wavelengths and no degradation effect at 356 nm and 675 nm even with the highest radiant exposure applied. In the spectral range where the Sun appears bright on the Earth’s surface, no degradation effects are observed.

  2. Valence band anticrossing in highly mismatched alloys

    NASA Astrophysics Data System (ADS)

    Alberi, Kirstin Mclean

    Semiconductor alloys offer the ability to tune certain material parameters such as the band gap or carrier effective mass through precise control of the alloy composition, allowing them to be optimized for specific device requirements. While many alloys demonstrate near linear composition dependencies in these properties, those containing isoelectronic anion species that are significantly mismatched in electronegativity or ionization energy, known as highly mismatched alloys (HMA), exhibit substantial deviation from this trend. Here, the optical and electrical properties of HMAs containing dilute concentrations of large metallic anions are investigated in the context of a valence band anticrossing (VBAC) theory. Minority species with low ionization energies often introduce localized p-states near the valence band edge of the host semiconductor. Hybridization of these localized states with the extended p-states of the host may be described by a 12 x 12 Hamiltonian and produces a splitting of the alloy valence band into E+ and E - states. Photomodulated reflectance studies coupled with the VBAC theory confirm that the band gap bowing observed in GaSbxAs1-x and GaBixAs1-x is caused by an upward movement of the valence band edge as a result of the anticrossing interaction between the E+ and E- states. The valence band restructuring also adversely affects hole transport in these alloys through an increase in the heavy hole effective mass and the addition of an alloy disorder scattering mechanism. Finally, the VBAC theory has been extended to group IV HMAs as well as to the dilute magnetic semiconductor Ga1-x MnxAs, both of which exhibit strong hole localization at the minority species sites.

  3. Valence band anticrossing in GaBixAs1-x

    SciTech Connect

    Alberi, K.; Dubon, O. D.; Walukiewicz, W.; Yu, K. M.; Bertulis, K.; Krotkus, A.

    2007-07-11

    The optical properties of GaBixAs1-x (0.04< x< 0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong reduction in the bandgap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration. These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T2 states of the Bi atoms.

  4. Weak morphology dependent valence band structure of boron nitride

    NASA Astrophysics Data System (ADS)

    Zhi, Chunyi; Ueda, Shigenori; Zeng, Haibo; Wang, Xuebin; Tian, Wei; Wang, Xi; Bando, Yoshio; Golberg, Dmitri

    2013-08-01

    We report a hard X-ray photoelectron spectroscopy (HX-PES) investigation on valence band structure of Boron Nitrides (BN) having different morphologies, including nanosheets, nanotubes, and micro-sized particles. Very weak morphology/valence band structure dependence was observed. For each case, the B-N π-band overlapping with σ-band between 0 to -12.5 eV and the s-band below -15 eV were identified. No obvious morphology-induced band shifts and intensity variations were observed. First-principles calculations based on density functional theory were performed and the results were compared with the experimental data. This theoretical analysis well explains the weak morphology dependent valence band spectra of BN nanomaterials obtained during HX-PES measurements.

  5. Measurement of valence band structure in arbitrary dielectric films

    SciTech Connect

    Uhm, Han S.; Choi, Eun H.

    2012-10-15

    A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

  6. Electronic valence bands in decagonal Al-Ni-Co

    NASA Astrophysics Data System (ADS)

    Theis, W.; Rotenberg, Eli; Franke, K. J.; Gille, P.; Horn, K.

    2003-09-01

    Valence-band photoemission from the s-p region of the tenfold and the two inequivalent twofold surfaces of quasicrystalline decagonal Al71.8Ni14.8Co13.4 reveals strongly dispersing bands. These exhibit a free-electron-like dispersion along quasiperiodic and periodic directions of the decagonal quasicrystal. The experimental photoemission maps are reproduced in detail by a model in which parabolic bands emanate from a set of reciprocal lattice vectors. A parity rule for the principal zone centers is observed.

  7. Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy

    SciTech Connect

    Khamari, Shailesh K.; Sinha, A. K.; Oak, S. M.; Banik, S.; Barman, S. R.; Dixit, V. K.

    2011-07-15

    The analysis of core levels positions of Ga{sub 3}d, N{sub 1s} and P{sub 2}p at different etching depth from the plasma nitrided GaP (111) surface shows that the nitrogen ions interact with both Gallium and Phosphorous ions with nearly equal probability. The analysis of valence band spectra shows the type-II band alignment between GaPN{sub 0.22}/GaP and the valence band offset is {approx}2.2{+-}0.1 eV.

  8. Valence band structure in crystalline pentacene thin films

    NASA Astrophysics Data System (ADS)

    Hatch, Richard; Huber, David; Höchst, Hartmut

    2009-03-01

    Organic semiconductors, such as pentacene (Pn), are beginning to show promise as a low-cost substitute for conventional semiconductors for a variety of electronic devices. The overlap of π-orbitals in the Pn crystal leads to molecular orbital-derived bands. We used angle-resolved photoemission spectroscopy (ARPES) to reveal the Pn in-plane band structure of the two highest occupied molecular orbital-derived bands in crystalline thin film Pn (grown on a Bi substrate) for various temperatures between 75 K and 300 K. We mapped these two bands in several crystallographic directions with special attention given to the region near the top of the valence band and show, within the limits of our experimental resolution, that temperature does not change the dispersions of these bands. We fit the band structure to a tight binding model and compared our results with recent theoretical predictions[1-2]. We also calculated the in-plane reciprocal effective mass for the M point and compared it with the measured mobility. [1] H. Yoshida et. al. Phys. Rev. B 77, 235205 (2008). [2] G. A. de Wijs et. al. Synth. Met. 139, 109 (2003).

  9. Strong linear- k valence-band mixing at semiconductor heterojunctions.

    PubMed

    Foreman, B A

    2001-03-19

    This paper examines linear- k terms in the gamma(8) valence-band Hamiltonian for heterostructures of zinc-blende-type semiconductors. In bulk crystals such terms are known to be extremely small, due to their origin as relativistic perturbations from d and f orbitals. However, in heterostructures there is a nonvanishing contribution from p orbitals. This contribution is an order of magnitude larger than the corresponding bulk term, and it should give rise to an optical anisotropy comparable to (although smaller than) that seen in recent experiments on the quantum-well Pockels effect.

  10. Inter-Valence-Subband/Conduction-Band-Transport IR Detectors

    NASA Technical Reports Server (NTRS)

    Ting, David; Gunapala, Sarath; Bandara, Sumith

    2004-01-01

    Infrared (IR) detectors characterized by a combination of (1) high-quantum-efficiency photoexcitation of inter-valence-subband transitions of charge carriers and (2) high-mobility conduction- band transport of the thus-excited charge carriers have been proposed in an effort to develop focal-plane arrays of such devices for infrared imaging. Like many prior quantum-well infrared photodetectors (QWIPs), the proposed devices would be made from semiconductor heterostructures. In order to obtain the combination of characteristics mentioned above, the proposed devices would be designed and fabricated in novel InAs/GaSb superlattice configurations that would exploit a phenomenon known in the semiconductor art as type-II broken-gap band offset.

  11. Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}

    SciTech Connect

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-15

    We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  12. Evidence of Eu2+ 4f electrons in the valence band spectra of EuTiO3 and EuZrO3

    NASA Astrophysics Data System (ADS)

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-01

    We report on optical band gap and valence electronic structure of two Eu2+-based perovskites, EuTiO3 and EuZrO3 as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f7 electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO3 perovskites except that it is shifted to higher binding energies. Appearance of the Eu2+ 4f7 band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  13. Spontaneous volume magnetostriction and non-Stoner behavior of the valence band in pure hcp Gd

    NASA Astrophysics Data System (ADS)

    Khmelevskyi, S.; Turek, I.; Mohn, P.

    2004-10-01

    Employing the disordered local moment formalism in combination with first-principles band-structure calculations, we study the behavior of the valence band in pure hcp Gd upon disorder of the local 4f GD moments. We show that the large value of the spontaneous volume magnetostriction in Gd is entirely due to changes in the magnetic state of the valence band at Tc and can be calculated in good agreement with experiment. The local exchange splitting of the valence band persists above Tc , which is in strong disagreement with the conventional Stoner picture. The analysis of our results provides a theoretical background for the discussion of recent photoemission experiments.

  14. Composition dependent valence band order in c-oriented wurtzite AlGaN layers

    SciTech Connect

    Neuschl, B. Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Feneberg, M.

    2014-09-21

    The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k∙p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with Γ₉ symmetry of b{sub Γ₉}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=-0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

  15. Rotational bands terminating at maximal spin in the valence space

    SciTech Connect

    Ragnarsson, I.; Afanasjev, A.V.

    1996-12-31

    For nuclei with mass A {le} 120, the spin available in {open_quotes}normal deformation configurations{close_quotes} is experimentally accessible with present detector systems. Of special interest are the nuclei which show collective features at low or medium-high spin and where the corresponding rotational bands with increasing spin can be followed in a continuous way to or close to a non-collective terminating state. Some specific features in this context are discussed for nuclei in the A = 80 region and for {sup 117,118}Xe.

  16. Hole-interface optical phonon relaxation rates with valence band-mixing effects

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Hoi

    2004-05-01

    We theoretically investigate the hole-interface optical phonon scattering rates for a InGaAs-AlGaAs quantum well structure, taking into account the valence-band mixing. The dispersion relation and the electrostatic potentials for interface optical phonon modes are obtained based on the macroscopic dielectric continuum model. For the hole dispersion relation, the Luttinger-Kohn Hamiltonian is used. The hole-interface optical phonon interaction is evaluated by the Fermi's golden rule taking into account the Bloch overlap factor. Our results show that the hole-interface phonon scattering rates within the parabolic band approximation are different from those including valence band mixing effects. Especially, in the low energy region, the hole-interface phonon scattering rates within the parabolic band approximation are overestimated very significantly.

  17. Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S2

    NASA Astrophysics Data System (ADS)

    Racke, David A.; Neupane, Mahesh R.; Monti, Oliver L. A.

    2016-02-01

    We present the momentum-resolved photoemission spectroscopy of both the valence and the conduction band region in the quasi-two-dimensional van der Waals-layered indirect band gap semiconductor Sn S2 . Using a combination of angle-resolved ultraviolet photoemission and angle-resolved two-photon photoemission (AR-2PPE) spectroscopy, we characterize the band structure of bulk Sn S2 . Comparison with density functional theory calculations shows excellent quantitative agreement in the valence band region and reveals several localized bands that likely originate from defects such as sulfur vacancies. Evidence for a moderate density of defects is also observed by AR-2PPE in the conduction band region, leading to localized bands not present in the computational results. The energetic structure and dispersion of the conduction bands is captured well by the computational treatment, with some quantitative discrepancies remaining. Our results provide a broader understanding of the electronic structure of Sn S2 in particular and van der Waals-layered semiconductors in general.

  18. Revisiting the Valence and Conduction Band Size Dependence of PbS Quantum Dot Thin Films

    SciTech Connect

    Miller, Elisa M.; Kroupa, Daniel M.; Zhang, Jianbing; Schulz, Philip; Marshall, Ashley R.; Kahn, Antoine; Lany, Stephan; Luther, Joseph M.; Beard, Matthew C.; Perkins, Craig L.; van de Lagemaat, Jao

    2016-03-22

    We use a high signal-to-noise X-ray photoelectron spectrum of bulk PbS, GW calculations, and a model assuming parabolic bands to unravel the various X-ray and ultraviolet photoelectron spectral features of bulk PbS as well as determine how to best analyze the valence band region of PbS quantum dot (QD) films. X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) are commonly used to probe the difference between the Fermi level and valence band maximum (VBM) for crystalline and thin-film semiconductors. However, we find that when the standard XPS/UPS analysis is used for PbS, the results are often unrealistic due to the low density of states at the VBM. Instead, a parabolic band model is used to determine the VBM for the PbS QD films, which is based on the bulk PbS experimental spectrum and bulk GW calculations. Our analysis highlights the breakdown of the Brillioun zone representation of the band diagram for large band gap, highly quantum confined PbS QDs. We have also determined that in 1,2-ethanedithiol-treated PbS QD films the Fermi level position is dependent on the QD size; specifically, the smallest band gap QD films have the Fermi level near the conduction band minimum and the Fermi level moves away from the conduction band for larger band gap PbS QD films. This change in the Fermi level within the QD band gap could be due to changes in the Pb:S ratio. In addition, we use inverse photoelectron spectroscopy to measure the conduction band region, which has similar challenges in the analysis of PbS QD films due to a low density of states near the conduction band minimum.

  19. Cooper pairing in the insulating valence band in iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Hu, Lun-Hui; Chen, Wei-Qiang; Zhang, Fu-Chun

    2015-04-01

    Conventional Cooper pairing arises from attractive interaction of electrons in the metallic bands. A recent experiment on Co-doped LiFeAs shows superconductivity in the insulating valence band, which is evolved from a metallic hole band upon doping. Here we examine this phenomenon by studying superconductivity in a three-orbital Hamiltonian relevant to the doped LiFeAs. We show explicitly that Cooper pairing of the insulating hole band requires a finite pairing interaction strength. For strong coupling, the superconductivity in the hole band is robust against the sink of the hole band below the Fermi level. Our theory predicts a substantial upward shift of the chemical potential in the superconducting transition for Co-doped LiFeAs.

  20. Valence Band Alignment at (111)/(0001) ScN/SiC and ScN/GaN Interfaces as Determined by Photoemission

    NASA Astrophysics Data System (ADS)

    King, Sean; Nemanich, Robert; Davis, Robert

    2014-03-01

    Scandium nitride (ScN) is a transition metal nitride material that over the past decade has garnered significant interest for nano-electronic, spin-tronic, optoelectronic, electro-acoustic, and thermoelectric applications. This is due to the reasonably close lattice matching exhibited between the (111) plane of ScN (0.3139 nm) and the (111) / (0001) planes of SiC and GaN (0.3073 and 0.3189 nm respectively). For these specific applications, the valence and conduction band alignment of ScN to SiC and GaN will play a significant role. In this regard, we have utilized x-ray photoelectron spectroscopy (XPS) to investigate the growth and interfacial valence band alignment for gas-source molecular beam epitaxy (GSMBE) of ScN on (111) 3C-SiC / (0001) 6H-SiC substrates. Using a detailed analysis of the attenuation of the Si2p core level from multiple ScN growths and XPS measurements, we find that ScN grows on (111) 3C-SiC in a layer by layer fashion. UPS measurements (Figure 1) show the ScN valence band to be 1.6-2.1 eV below the system Fermi level indicating a minimum band gap on this order. Detailed XPS/UPS measurements indicate the ScN/3C-SiC valence band offset is small (<= 0.3 eV). Additional measurements for GSMBE GaN on ScN show a larger interfacial valence band discontinuity of ~ 0.8 eV.

  1. Application of Koopmans' theorem for density functional theory to full valence-band photoemission spectroscopy modeling.

    PubMed

    Li, Tsung-Lung; Lu, Wen-Cai

    2015-10-05

    In this work, Koopmans' theorem for Kohn-Sham density functional theory (KS-DFT) is applied to the photoemission spectra (PES) modeling over the entire valence-band. To examine the validity of this application, a PES modeling scheme is developed to facilitate a full valence-band comparison of theoretical PES spectra with experiments. The PES model incorporates the variations of electron ionization cross-sections over atomic orbitals and a linear dispersion of spectral broadening widths. KS-DFT simulations of pristine rubrene (5,6,11,12-tetraphenyltetracene) and potassium-rubrene complex are performed, and the simulation results are used as the input to the PES models. Two conclusions are reached. First, decompositions of the theoretical total spectra show that the dissociated electron of the potassium mainly remains on the backbone and has little effect on the electronic structures of phenyl side groups. This and other electronic-structure results deduced from the spectral decompositions have been qualitatively obtained with the anionic approximation to potassium-rubrene complexes. The qualitative validity of the anionic approximation is thus verified. Second, comparison of the theoretical PES with the experiments shows that the full-scale simulations combined with the PES modeling methods greatly enhance the agreement on spectral shapes over the anionic approximation. This agreement of the theoretical PES spectra with the experiments over the full valence-band can be regarded, to some extent, as a collective validation of the application of Koopmans' theorem for KS-DFT to valence-band PES, at least, for this hydrocarbon and its alkali-adsorbed complex.

  2. Observation of potassium-intercalated carbon nanotubes and their valence-band excitation spectra

    NASA Astrophysics Data System (ADS)

    Suzuki, S.; Tomita, M.

    1996-04-01

    Second-stage potassium-intercalated carbon nanotubes were synthesized in a specially designed ultrahigh vacuum analytical electron microscope and their valence-band excitation spectra in the region of the π+σ plasmon were measured by electron energy loss spectroscopy. The carbon nanostructures consisted of graphene sheets. Potassium was deposited in an ultrahigh vacuum at room temperature. As a result, a second stage of intercalated nanotubes was found to be formed close to the surface. The energy loss spectra of the intercalated nanotubes showed humps at about 16, 19, and 22 eV, in addition to those of unintercalated tubes. This suggests that intercalation modified the band structure of the interlayer bands and/or the σ(σ*) bands.

  3. Band gap widening at random CIGS grain boundary detected by valence electron energy loss spectroscopy

    NASA Astrophysics Data System (ADS)

    Keller, Debora; Buecheler, Stephan; Reinhard, Patrick; Pianezzi, Fabian; Bissig, Benjamin; Carron, Romain; Hage, Fredrik; Ramasse, Quentin; Erni, Rolf; Tiwari, Ayodhya N.

    2016-10-01

    Cu(In,Ga) Se2 (CIGS) thin film solar cells have demonstrated very high efficiencies, but still the role of nanoscale inhomogeneities in CIGS and their impact on the solar cell performance are not yet clearly understood. Due to the polycrystalline structure of CIGS, grain boundaries are very common structural defects that are also accompanied by compositional variations. In this work, we apply valence electron energy loss spectroscopy in scanning transmission electron microscopy to study the local band gap energy at a grain boundary in the CIGS absorber layer. Based on this example, we demonstrate the capabilities of a 2nd generation monochromator that provides a very high energy resolution and allows for directly relating the chemical composition and the band gap energy across the grain boundary. A band gap widening of about 20 meV is observed at the grain boundary. Furthermore, the compositional analysis by core-loss EELS reveals an enrichment of In together with a Cu, Ga and Se depletion at the same area. The experimentally obtained results can therefore be well explained by the presence of a valence band barrier at the grain boundary.

  4. Band width and multiple-angle valence-state mapping of diamond

    SciTech Connect

    Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J.

    1997-04-01

    The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid`s many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of {+-}1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84{degrees} cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space.

  5. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    SciTech Connect

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; Adamska, Lyudmyla; Yamada, Takatoshi; Dattelbaum, Andrew M.; Gupta, Gautam; Doorn, Stephen K.; Velizhanin, Kirill A.; Teraoka, Yuden; Chen, Mingwei; Htoon, Han; Chhowalla, Manish; Mohite, Aditya D.; Takakuwa, Yuji

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

  6. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    DOE PAGES

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; ...

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

  7. Alternative structure of TiO2 with higher energy valence band edge

    NASA Astrophysics Data System (ADS)

    Coh, Sinisa; Yu, Peter Y.; Aoki, Yuta; Saito, Susumu; Louie, Steven G.; Cohen, Marvin L.

    2017-02-01

    We propose an alternative structure of TiO2 anatase that has a higher energy oxygen p -like valence band maximum than pristine TiO2 anatase and thus has a much better alignment with the water splitting levels. This alternative structure is unique when considering a large subspace of possible structural distortions of TiO2 anatase. We propose two routes towards this state and argue that one of them might have been realized in the recently discovered so-called black TiO2.

  8. Experimental study of the valence band of Bi2Se3

    DOE PAGES

    Gao, Yi-Bin; He, Bin; Parker, David; ...

    2014-09-26

    The valence band of Bi2Se3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

  9. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental-Theoretical Study.

    PubMed

    Endres, James; Egger, David A; Kulbak, Michael; Kerner, Ross A; Zhao, Lianfeng; Silver, Scott H; Hodes, Gary; Rand, Barry P; Cahen, David; Kronik, Leeor; Kahn, Antoine

    2016-07-21

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

  10. Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency

    PubMed Central

    Xu, Juan; Teng, Yiran; Teng, Fei

    2016-01-01

    Both energy band and charge separation and transfer are the crucial affecting factor for a photochemical reaction. Herein, the BiOCl nanosheets without and with surface bismuth vacancy (BOC, V-BOC) are prepared by a simple hydrothermal method. It is found that the new surface defect states caused by bismuth vacancy have greatly up-shifted the valence band and efficiently enhanced the separation and transfer rates of photogenerated electron and hole. It is amazing that the photocatalytic activity of V-BOC is 13.6 times higher than that of BOC for the degradation methyl orange (MO). We can develop an efficient photocatalyst by the introduction of defects. PMID:27586149

  11. Symmetry origins of the `caldera' valence band distortion in 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Li, Pengke; Appelbaum, Ian; Physics Department Team

    The electronic structures of many two-dimensional van der Waals semiconductors exhibit various fascinating properties distinct from their three-dimensional bulk counterparts. Through an examination of their lattice symmetries, we identify several universal rules dictating their band dispersion in the monolayer limit, where in-plane mirror symmetry and quantum confinement play critical roles. Taking group-III metal monochalcogenides (such as GaSe) as an example, we reveal the origin of the unusual `caldera' shape of the valence band edge (otherwise inelegantly dubbed an `upside down Mexican hat'), which we show is surprisingly common among other 2D semiconductors (such as in phosphorene for k along its zigzag direction). Reference: arXiv:1508.06963

  12. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    NASA Astrophysics Data System (ADS)

    Wickramaratne, Darshana; Zahid, Ferdows; Lake, Roger K.

    2015-08-01

    The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a "Mexican hat" or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi2Se3, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi2Se3 is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

  13. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

    SciTech Connect

    Wickramaratne, Darshana E-mail: rlake@ece.ucr.edu; Lake, Roger K. E-mail: rlake@ece.ucr.edu; Zahid, Ferdows

    2015-08-21

    The valence band of a variety of few-layer, two-dimensional materials consist of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a “Mexican hat” or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III–VI materials GaS, GaSe, InS, InSe, for Bi{sub 2}Se{sub 3}, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III–VI materials and Bi{sub 2}Se{sub 3} is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

  14. Valence band dispersion measurements of perovskite single crystals using angle-resolved photoemission spectroscopy.

    PubMed

    Wang, Congcong; Ecker, Benjamin R; Wei, Haotong; Huang, Jinsong; Meng, Jian-Qiao; Gao, Yongli

    2017-02-15

    The electronic structure of a cleaved perovskite (CH3NH3PbBr3) single crystal was studied in an ultra-high vacuum (UHV) system using angle-resolved photoemission spectroscopy (ARPES) and inverse photoelectron spectroscopy (IPES). Highly reproducible dispersive features of the valence bands were observed with symmetry about the Brillouin zone center and boundaries. The largest dispersion width was found to be ∼0.73 eV and ∼0.98 eV along the ΓX and ΓM directions, respectively. The effective mass of the holes was estimated to be ∼0.59m0. The quality of the surface was verified using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The elemental composition was investigated using high resolution X-ray photoelectron spectroscopy (XPS). The experimental electronic structure shows a good agreement with the theoretical calculation.

  15. Electric fields and valence-band offsets at strained [111] heterojunctions

    NASA Astrophysics Data System (ADS)

    Picozzi, S.; Continenza, A.; Freeman, A. J.

    1997-05-01

    Ab initio full-potential linearized augmented plane wave (FLAPW) [H. J. F. Jansen and A. J. Freeman, Phys. Rev. B 30, 561 (1984); M. Weinert, H. Krakauer, E. Wimmer, and A. J. Freeman, ibid. 24, 864 (1981)] calculations have been performed for the [111] ordered common atom strained layer superlattices (in particular, the common-anion GaSb/InSb system and the common-cation InAs/InSb system). We have focused our attention on the potential line up at the two sides of the homopolar isovalent heterojunctions considered, and, in particular, on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane, where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line up is highly tunable as a function of the strain conditions. Finally, we compare our results with those obtained for the [001] heterojunctions.

  16. Site-specific intermolecular valence-band dispersion in α-phase crystalline films of cobalt phthalocyanine studied by angle-resolved photoemission spectroscopy

    SciTech Connect

    Yamane, Hiroyuki; Kosugi, Nobuhiro

    2014-12-14

    The valence band structure of α-phase crystalline films of cobalt phthalocyanine (CoPc) grown on Au(111) is investigated by using angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. The photo-induced change in the ARPES peaks is noticed in shape and energy of the highest occupied molecular orbital (HOMO, C 2p) and HOMO-1 (Co 3d) of CoPc, and is misleading the interpretation of the electronic properties of CoPc films. From the damage-free normal-emission ARPES measurement, the clear valence-band dispersion has been first observed, showing that orbital-specific behaviors are attributable to the interplay of the intermolecular π-π and π-d interactions. The HOMO band dispersion of 0.1 eV gives the lower limit of the hole mobility for α-CoPc of 28.9 cm{sup 2} V{sup −1} s{sup −1} at 15 K. The non-dispersive character of the split HOMO-1 bands indicates that the localization of the spin state is a possible origin of the antiferromagnetism.

  17. The role of beryllium in the band structure of MgZnO: Lifting the valence band maximum

    NASA Astrophysics Data System (ADS)

    Chen, S. S.; Pan, X. H.; Chen, W.; Zhang, H. H.; Dai, W.; Ding, P.; Huang, J. Y.; Lu, B.; Ye, Z. Z.

    2014-09-01

    We investigate the effect of Be on the valence band maximum (VBM) of MgZnO by measuring the band offsets of MgxZn1-xO/BexMgyZn1-x-yO heterojunctions using X-ray photoelectron spectroscopy measurements. MgxZn1-xO and BexMgyZn1-x-yO films have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The valence band offset ( Δ E V) of Mg0.15Zn0.85O ( E g = 3.62 eV)/Be0.005Mg0.19Zn0.805O ( E g = 3.73 eV) heterojunction is 0.01 eV and Be0.005Mg0.19Zn0.805O has a lower VBM. The increased Mg composition is the main factor for the reduction of VBM. The VBM of MgxZn1-xO is lower by 0.03 eV with the enlargement of E g from 3.62 eV to 3.73 eV by increasing Mg composition. Considering the effect of increased Mg composition, it is concluded that the little amount of Be makes the VBM go up by 0.02 eV when the E g of the alloy is 3.73 eV. The Δ E V of Mg0.11Zn0.89O ( E g = 3.56 eV)/Be0.007Mg0.12Zn0.873O ( E g = 3.56 eV) heterojunction is calculated to be 0.03 eV and Be0.007Mg0.12Zn0.873O has a higher VBM than Mg0.11Zn0.89O, which means that a little amount Be lifts the VBM by 0.03 eV when the E g of the alloy is 3.56 eV. The experimental measurements have offered a strong support for the theoretical research that alloying Be in MgxZn1-xO alloys is hopeful to form a higher VBM and to enhance the p-type dopability of MgZnO.

  18. Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys

    SciTech Connect

    Jaworski, C. M.; Nielsen, Mechele; Wang, Hsin; Girard, Steven N.; Cai, Wei; Porter, Wallace D; Kanatzidis, Mercouri G.; Heremans, J. P.

    2013-01-01

    New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed: they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.

  19. The role of beryllium in the band structure of MgZnO: Lifting the valence band maximum

    SciTech Connect

    Chen, S. S.; Pan, X. H. E-mail: yezz@zju.edu.cn; Chen, W.; Zhang, H. H.; Dai, W.; Ding, P.; Huang, J. Y.; Lu, B.; Ye, Z. Z. E-mail: yezz@zju.edu.cn

    2014-09-22

    We investigate the effect of Be on the valence band maximum (VBM) of MgZnO by measuring the band offsets of Mg{sub x}Zn{sub 1−x}O/Be{sub x}Mg{sub y}Zn{sub 1−x−y}O heterojunctions using X-ray photoelectron spectroscopy measurements. Mg{sub x}Zn{sub 1−x}O and Be{sub x}Mg{sub y}Zn{sub 1−x−y}O films have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The valence band offset (ΔE{sub V}) of Mg{sub 0.15}Zn{sub 0.85}O (E{sub g} = 3.62 eV)/Be{sub 0.005}Mg{sub 0.19}Zn{sub 0.805}O (E{sub g} = 3.73 eV) heterojunction is 0.01 eV and Be{sub 0.005}Mg{sub 0.19}Zn{sub 0.805}O has a lower VBM. The increased Mg composition is the main factor for the reduction of VBM. The VBM of Mg{sub x}Zn{sub 1−x}O is lower by 0.03 eV with the enlargement of E{sub g} from 3.62 eV to 3.73 eV by increasing Mg composition. Considering the effect of increased Mg composition, it is concluded that the little amount of Be makes the VBM go up by 0.02 eV when the E{sub g} of the alloy is 3.73 eV. The ΔE{sub V} of Mg{sub 0.11}Zn{sub 0.89}O (E{sub g} = 3.56 eV)/Be{sub 0.007}Mg{sub 0.12}Zn{sub 0.873}O (E{sub g} = 3.56 eV) heterojunction is calculated to be 0.03 eV and Be{sub 0.007}Mg{sub 0.12}Zn{sub 0.873}O has a higher VBM than Mg{sub 0.11}Zn{sub 0.89}O, which means that a little amount Be lifts the VBM by 0.03 eV when the E{sub g} of the alloy is 3.56 eV. The experimental measurements have offered a strong support for the theoretical research that alloying Be in Mg{sub x}Zn{sub 1−x}O alloys is hopeful to form a higher VBM and to enhance the p-type dopability of MgZnO.

  20. Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental–Theoretical Study

    PubMed Central

    2016-01-01

    We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125

  1. Crossover from impurity to valence band in diluted magnetic semiconductors: Role of Coulomb attraction by acceptors

    SciTech Connect

    Popescu, Florentin; Sen, Cengiz; Dagotto, Elbio R; Moreo, Adriana

    2007-01-01

    The crossover between an impurity band (IB) and a valence band (VB) regime as a function of the magnetic impurity concentration in a model for diluted magnetic semiconductors (DMSs) is studied systematically by taking into consideration the Coulomb attraction between the carriers and the magnetic impurities. The density of states and the ferromagnetic transition temperature of a spin-fermion model applied to DMSs are evaluated using dynamical mean-field theory and Monte Carlo (MC) calculations. It is shown that the addition of a square-well-like attractive potential can generate an IB at small enough Mn doping x for values of the p-d exchange J that are not strong enough to generate one by themselves. We observe that the IB merges with the VB when x>=xc where xc is a function of J and the Coulomb strength V. Using MC simulations, we demonstrate that the range of the Coulomb attraction plays an important role. While the on-site attraction, which has been used in previous numerical simulations, effectively renormalizes J for all values of x, an unphysical result, a nearest-neighbor range attraction renormalizes J only at very low dopings, i.e., until the bound holes wave functions start to overlap. Thus, our results indicate that the Coulomb attraction can be neglected to study Mn-doped GaSb, GaAs, and GaP in the relevant doping regimes, but it should be included in the case of Mn-doped GaN, which is expected to be in the IB regime.

  2. Valence electronic structure of semiconductor quantum dot and wide band gap oxide interfaces by ultraviolet photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Timp, Brooke Andrea

    Energy level alignment is an important factor in efficient charge transfer at an interface between two semiconductors. This topic is explored in model systems that are relevant to quantum dot-sensitized solar cells, inorganic semiconductor nanoparticles adsorbed on single crystal wide band gap oxide substrates, using ultraviolet photoelectron spectroscopy. Cadmium selenide quantum dots are assembled on a ZnO (10 1¯ 0) surface using 3-mercaptopropionic acid linkers. The valence band maximum of the CdSe quantum dots is found to be located at 1.1 +/- 0.1 eV above the valence band maximum of ZnO, nearly independent of the size of the quantum dots (2.1-4.2 nm). This finding suggests that, upon adsorption, there is strong electronic interaction between CdSe quantum dots and the ZnO surface. As a result, varying the quantum dot size mainly tunes the alignment of the conduction band minimum of CdSe with respect to that of the ZnO surface. Sub-monolayer films of PbSe quantum dots are prepared on single crystal substrates, ZnO (10 1 0 ) and TiO2 (110), and exposed to ligand solutions, either hydrazine or 1,2-ethanedithiol (EDT) in acetonitrile. Interfacial energy alignment is measured as a function of quantum dot size, substrate and ligand treatment. The affect of the ligand treatments on the energy alignment is substrate-dependent. The valence band maximum of the dots is size-independent on ZnO due to strong electronic interactions with the substrate; in particular, EDT-treated films show significant enhancement of quantum dot valence band intensity due to electronic coupling with the ZnO surface. In contrast, the quantum dot valence band maximum is size-dependent and shows a smaller shift between ligand treatments for films on TiO2, suggesting weaker quantum dot-substrate interactions. In most cases the measured alignment predicts that electron injection from a photoexcited PbSe quantum dot to either ZnO or TiO2 will necessitate the involvement of higher-lying levels

  3. Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

    SciTech Connect

    Inaoka, Takeshi Yanagisawa, Susumu; Kadekawa, Yukihiro

    2014-02-14

    By means of the first-principles density-functional theory, we investigate the effect of relative atom displacement in the crystal unit cell, namely, internal strain on the valence-band dispersion of strained silicon, and find close correlation of this effect with variation in the specific bond angles due to internal strain. We consider the [111] ([110]) band dispersion for (111) ((110)) biaxial tensility and [111] ([110]) uniaxial compression, because remarkably small values of hole effective mass m* can be obtained in this dispersion. Under the practical condition of no normal stress, biaxial tensility (uniaxial compression) involves additional normal compression (tensility) and internal strain. With an increase in the internal-strain parameter, the energy separation between the highest and second-highest valence bands becomes strikingly larger, and the highest band with conspicuously small m* extends remarkably down to a lower energy region, until it intersects or becomes admixed with the second band. This is closely correlated with the change in the specific bond angles, and this change can reasonably explain the above enlargement of the band separation.

  4. Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

    PubMed

    Samajdar, D P; Dhar, S

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  5. Experimental study of the 2p-2h band in {sup 111}Sn

    SciTech Connect

    Ganguly, S.; Banerjee, P.; Ray, I.; Kshetri, R.; Raut, R.; Bhattacharya, S.; Saha-Sarkar, M.; Goswami, A.; Basu, S. K.

    2008-09-15

    The {delta}I=2 intruder band in {sup 111}Sn, built upon the 4074.3 keV state, was studied. The states were populated in the {sup 100}Mo({sup 20}Ne, {alpha}5n) reaction at a beam energy of 136 MeV. Mean lifetimes of five states up to 8737.2 keV (spin 43/2{sup -}) have been measured for the first time using the Doppler shift attenuation method. In addition, an upper limit of mean lifetime has been estimated for the 9860.0 keV (spin 47/2{sup -}) state. The B(E2) values, derived from the present lifetime results, indicate a quadrupole deformation of {beta}{sub 2}=0.28{+-}0.02 for the 31/2{sup -} state and decrease progressively with spin, suggesting a reduction in collectivity. The dynamic moment of inertia for the band also decreases continuously up to the highest observed frequencies. These results, along with the predictions of a total Routhian surface calculation, suggest that the {delta}I=2 band in {sup 111}Sn undergoes a change of shape from collective prolate to triaxial with increase in spin and possibly terminates in a noncollective oblate state at a high spin.

  6. Valence band structure calculations of GaAs/Ga xIn 1-xP strained-layer quantum wells

    NASA Astrophysics Data System (ADS)

    Zitouni, K.; Rerbal, K.; Kadri, A.

    1993-04-01

    Valence band structure of GaAs/Ga xIn 1-xP strained-layer quantum wells are investigated within an envelope function formalism which takes into account the valence subbands mixing through the Luttinger-Kohn Hamiltonian and the strain effects due to the lattice-mismatch through the Pikus-Bir Hamiltonian. For a Ga mole fraction x greater than 0.516 (compression), the top valence band is heavy-hole-like. For x less than 0.516 (tension strain), the top valence subband can be either heavy-hole-like or light-hole-like, depending on the well width and on the shear deformation potential. Interesting features are also obtained for the effective masses of the valence subbands from ɛ( K→) energy dispersion calculations along the in-plane K→ direction.

  7. Nitrogen-induced perturbation of the valence band states in GaP1-xNx alloys

    NASA Astrophysics Data System (ADS)

    Dudiy, S. V.; Zunger, Alex; Felici, M.; Polimeni, A.; Capizzi, M.; Xin, H. P.; Tu, C. W.

    2006-10-01

    The effects of diluted nitrogen impurities on the valence- and conduction-band states of GaP1-xNx have been predicted and measured experimentally. The calculation uses state-of-the-art atomistic modeling: we use large supercells with screened pseudopotentials and consider several random realizations of the nitrogen configurations. These calculations agree with photoluminescence excitation (PLE) measurements performed for nitrogen concentrations x up to 0.035 and photon energies up to 1eV above the GaP optical-absorption edge, as well as with published ellipsometry data. In particular, a predicted nitrogen-induced buildup of the L character near the valence- and conduction-band edges accounts for the surprising broad-absorption plateau observed in PLE between the X1c and the Γ1c critical points of GaP. Moreover, theory accounts quantitatively for the downward bowing of the indirect conduction-band edge and for the upward bowing of the direct transition with increasing nitrogen concentration. We review some of the controversies in the literature regarding the shifts in the conduction band with composition, and conclude that measured results at ultralow N concentration cannot be used to judge behavior at a higher concentration. In particular, we find that at the high concentrations of nitrogen studied here (˜1%) the conduction-band edge (CBE) is a hybridized state made from the original GaP X1c band-edge state plus all cluster states. In this limit, the CBE plunges down in energy as the N concentration increases, in quantitative agreement with the measurements reported here. However, at ultralow nitrogen concentrations (<0.1%) , the CBE is the nearly unperturbed host X1c , which does not sense the nitrogen cluster levels. Thus, this state does not move energetically as nitrogen is added and stays pinned in energy, in agreement with experimental results.

  8. Spectroscopic evidence for temperature-dependent convergence of light- and heavy-hole valence bands of PbQ (Q = Te, Se, S)

    SciTech Connect

    Zhao, J.; Malliakas, C. D.; Wijayaratne, K.; Karlapati, V.; Appathurai, N.; Chung, D. Y.; Rosenkranz, S.; Kanatzidis, M. G.; Chatterjee, U.

    2017-01-01

    We have conducted a temperature- dependent angle-resolved photoemission spectroscopy (ARPES) study of the electronic structures of PbTe, PbSe and PbS. Our ARPES data provide direct evidence for the light-hole upper valence bands (UVBs) and hitherto undetected heavy-hole lower valence bands (LVBs) in these materials. An unusual temperature-dependent relative movement between these bands leads to a monotonic decrease in the energy separation between their maxima with increasing temperature, which is known as band convergence and has long been believed to be the driving factor behind extraordinary thermoelectric performances of these compounds at elevated temperatures.

  9. Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states

    NASA Astrophysics Data System (ADS)

    Mönch, Winfried

    1998-04-01

    Many metal chalcogenides are layered semiconductors. They consist of chalcogen-metal-chalcogen layers that are themselves bound by van der Waals forces. Hence, heterostructures involving layered compounds are abrupt and strain-free. Experimental valence-band offsets of heterostructures between GaSe, InSe, SnS2, SnSe2, MoS2, MoTe2, WSe2, and CuInSe2 and between some of these compounds and ZnSe, CdS, and CdTe as well as barrier heights of Au contacts on GaSe, InSe, MoS2, MoTe2, WSe2, ZnSe, CdS, and CdTe are analyzed. The valence-band discontinuities of the heterostructures and the barrier heights of the Schottky contact compounds are consistently described by the continuum of interface-induced gap states as the primary mechanism that governs the band lineup at semiconductor interfaces.

  10. A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

    SciTech Connect

    Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; Li, Qiang; Uher, Ctirad

    2016-05-02

    Here, SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ~ 4 μB (Bohr magneton) of magnetic moment to Sn1-xMnxTe. The Curie temperature TC reaches ~ 14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.

  11. A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

    DOE PAGES

    Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; ...

    2016-05-02

    Here, SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ~ 4 μB (Bohr magneton) of magnetic moment to Sn1-xMnxTe. The Curie temperature TC reaches ~ 14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorablymore » enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.« less

  12. Spin-polarized photoelectron diffraction and valence-band photoemission from MnO(001)

    NASA Astrophysics Data System (ADS)

    Hermsmeier, B.; Osterwalder, J.; Friedman, D. J.; Sinkovic, B.; Tran, T.; Fadley, C. S.

    1990-12-01

    steps with calculations based upon exchange scattering in the spin-polarized SSC model [B. Sinkovic and C. S. Fadley, Phys. Rev. B 31, 4665 (1985)], and conclude that there is at least qualitative agreement. A final aspect of our data concerns the temperature dependence of the Mn 3d-dominated valence-band spectra: These spectra are found to show no measurable change in crossing TSR, but by contrast exhibit a large 0.4-eV increase in width in going below TN, which is in contradiction to recent theoretical predictions.

  13. Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe

    NASA Astrophysics Data System (ADS)

    Rybkovskiy, Dmitry V.; Osadchy, Alexander V.; Obraztsova, Elena D.

    2014-12-01

    By performing first-principles electronic structure calculations in frames of density functional theory we study the dependence of the valence band shape on the thickness of few-layer III-VI crystals (GaS, GaSe, and InSe). We estimate the critical thickness of transition from the bulklike parabolic to the ring-shaped valence band. Direct supercell calculations show that the ring-shaped extremum of the valence band appears in β -GaS and β -GaSe at a thickness below 6 tetralayers (˜4.6 nm ) and 8 tetralayers (˜6.4 nm ), respectively. Zone-folding calculations estimate the β -InSe critical thickness to be equal to 28 tetralayers (˜24.0 nm ). The origin of the ring-shaped valence band maximum can be understood in terms of k.p theory, which provides a link between the curvature of the energy bands and the distance between them. We explain the dependence of the band shape on the thickness, as well as the transition between two types of extremes, by the k -dependent orbital composition of the topmost valence band. We show that in the vicinity of critical thickness the effective mass of holes in III-VI compounds depends strongly on the number of tetralayers.

  14. Effects of ion aggregation on the intervalence transfer band of the mixed-valence biferrocenium cation in solution

    SciTech Connect

    Lowery, M.D.; Hammack, W.S.; Drickamer, H.G.; Hendrickson, D.N.

    1987-12-23

    The concentration dependence of the energy (E/sup op/) of the intervalence transfer (IT) electronic absorption band of mixed-valence biferrocenium triiodide dissolved in either nitrobenzene or dichloromethane is examined. In nitrobenzene, E/sup op/ increases rapidly from approx. 5.57 to approx. 6.05 x 10/sup 3/ cm/sup -1/ in the 0.24-0.4 mM range, whereupon further increases in the concentration of biferrocenium triiodide lead to E/sup op/ increasing more gradually to a value approx. 6.3 x 10/sup 3/ cm/sup -1/ at 24 mM. On the other hand, the full width at half maximum (..delta.. anti v/sub 1/2) and the transition moment of the IT band decrease with increasing concentration for biferrocenium triiodide in nitrobenzene. E/sup op/ increases, ..delta.. anti v/sub 1/2 remains constant, and the transition moment of the IT band increases with increasing concentration for biferrocenium triiodide in dichloromethane in the more limited range of 0.30-0.95 mM. These concentration dependencies of the IT band for biferrocenium triiodide are attributable to variable degrees of ion aggregation in solution. The concentration dependencies of the electrical conductivity of solutions of biferrocenium triiodide in either nitrobenzene or dichloromethane substantiate this proposal. IT band contours obtained at different concentrations are fit to the PKS vibronic model to yield parameters that characterize the electronic and vibronic coupling within the mixed-valence biferrocenium cation.

  15. Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Zhang, Kexiong; Liao, Meiyong; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

    2016-11-01

    The interfacial chemical state and the band alignment of the sputtering-deposited CaF2/p-GaN hetero-structure were investigated by angle-resolved X-ray photoelectron spectroscopy. The dependence of Ga 3p core-level positions on the collection angles proves that the downward band bending of p-GaN is reduced from 1.51 to 0.85 eV after the deposition of CaF2, which may be due to the reduction of Mg-Ga-O-related interface states by the oxygen-free deposition of CaF2. The band gap of sputtering-deposited CaF2 is estimated to be about 7.97 eV with a potential gradient of 0.48 eV obtained by the variation of the Ca 2p3/2 position on different collection angles. By taking into account the p-GaN surface band bending and potential gradient in the CaF2 layer, large valence and conduction band offsets of 2.66 ± 0.20 and 1.92 ± 0.20 eV between CaF2 and p-GaN are obtained. These results indicate that CaF2 is a promising gate dielectric layer on the p-GaN for the application of metal-insulator-semiconductor devices.

  16. Mixed-valence effects and metamagnetism in a two-band model of correlated electrons

    NASA Astrophysics Data System (ADS)

    Acquarone, M.; SpaŁek, J.; Ray, D. K.

    1986-03-01

    We discuss both continuous and discontinuous transitions form para- to ferromagnetism within a model of electrons in double degenerate and hybridized band. We transform out rigorously the hybridization and obtain a two-band model with the component bands of substantially different width. This band structure is approximated by a band and a level placed in the center of the band. The model is solved both with and without applied magnetic field, within the Hartree-Fock approximation for the intraband and the interband interactions, and treating the Coulomb interactions on the level exactly. The self-consistent solutions for the magnetic moment and the band filling are given allowing for a redistribution of particles between the band and the level. A number of ferromagnetic and mixed-valent-type of configurations is possible, leading to a possibility of appearance of ferromagnetism in a discontinuous way and without the Stoner condition being fulfilled at the transition. Such transition cannot be described within the standard Ginzburg-Landau theory obtained from the Stoner-Wohlfarth model for a single band. The obtained result are used to give a qualitative explanation of the main results observed for the systems Co(S 1 - xSe x) 2 and CoTi 1 - xAl x.

  17. Auroral excitation of the N2 2P(0,0) and VK(0,9) bands

    NASA Astrophysics Data System (ADS)

    Solomon, Stanley C.

    1989-12-01

    The low-energy secondary electron flux caused by auroral electron precipitation is examined using data from the Atmosphere Explorer C satellite. An energetic electron transport algorithm is used to compute the differential electron flux produced by measured primaries. Emissions of N2 in the 2P(0,0) band at 337 nm and the VK(0,9) band at 335 nm predicted by the model are compared with photometric observation of their combined volume emission rate altitude profile made by the visible airglow experiment. Reasonable correspondence between model and measurement is obtained. Ratios of emissions at 337 nm and 630 nm to the N2(+) 1N(0,0) band at 428 nm are also studied. It is concluded that the 337/428 nm ratio responds to changes in the characteristic energy of primary auroral electrons only insofar as part of the 337 nm brightness is due to N2 VK(0,9) emission. The 630/428 nm ratio, which is strongly dependent on characteristic energy, also varies significantly with changes in atomic oxygen density.

  18. Auroral excitation of the N2 2P(0,0) and VK(0,9) bands

    NASA Technical Reports Server (NTRS)

    Solomon, Stanley C.

    1989-01-01

    The low-energy secondary electron flux caused by auroral electron precipitation is examined using data from the Atmosphere Explorer C satellite. An energetic electron transport algorithm is used to compute the differential electron flux produced by measured primaries. Emissions of N2 in the 2P(0,0) band at 337 nm and the VK(0,9) band at 335 nm predicted by the model are compared with photometric observation of their combined volume emission rate altitude profile made by the visible airglow experiment. Reasonable correspondence between model and measurement is obtained. Ratios of emissions at 337 nm and 630 nm to the N2(+) 1N(0,0) band at 428 nm are also studied. It is concluded that the 337/428 nm ratio responds to changes in the characteristic energy of primary auroral electrons only insofar as part of the 337 nm brightness is due to N2 VK(0,9) emission. The 630/428 nm ratio, which is strongly dependent on characteristic energy, also varies significantly with changes in atomic oxygen density.

  19. Thermoelectric Enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands

    SciTech Connect

    Androulakis, John; Todorov, Iliya; Chung, Duck Young; Ballikaya, Sedat; Wang, Guoyu Y; Uher, Ctirad; Kanatzidis, Mercouri G.

    2010-09-16

    The effect of K and K-Na substitution for Pb atoms in the rocksalt lattice of PbTe was investigated to test a hypothesis for development of resonant states in the valence band that may enhance the thermoelectric power. We combined high-temperature Hall-effect, electrical conductivity, and thermal conductivity measurements to show that K-Na codoping do not form resonance states but can control the energy difference of the maxima of the two primary valence subbands in PbTe. This leads to an enhanced interband interaction with rising temperature and a significant rise in the thermoelectric figure of merit of p -type PbTe. The experimental data can be explained by a combination of a single- and two-band models for the valence band of PbTe depending on hole density that varies in the range of 1–15x1019 cm-3 .

  20. Determination of the valence-band offset of CdS/CIS solar cell devices by target factor analysis

    SciTech Connect

    Niles, D.W.; Contreras, M.; Ramanathan, K.; Noufi, R.

    1996-05-01

    X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets ({Delta}E{sub v}) for CdS grown by chemical bath deposition on single-crystal and thin-film CuInSe{sub 2} (CIS). The thin-film CIS device was suitable for photovoltaic energy production. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitude of {Delta}E{sub v} was determined to be {Delta}E{sub v} = 1.06 {+-} 0.15 eV for both the single-crystal and thin-film interfaces. This determination of {Delta}E{sub v} is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices.

  1. The valence band structure of Ag{sub x}Rh{sub 1–x} alloy nanoparticles

    SciTech Connect

    Yang, Anli; Sakata, Osami; Kusada, Kohei; Kobayashi, Hirokazu; Yayama, Tomoe; Ishimoto, Takayoshi; Yoshikawa, Hideki; Koyama, Michihisa; and others

    2014-10-13

    The valence band (VB) structures of face-centered-cubic Ag-Rh alloy nanoparticles (NPs), which are known to have excellent hydrogen-storage properties, were investigated using bulk-sensitive hard x-ray photoelectron spectroscopy. The observed VB spectra profiles of the Ag-Rh alloy NPs do not resemble simple linear combinations of the VB spectra of Ag and Rh NPs. The observed VB hybridization was qualitatively reproduced via a first-principles calculation. The electronic structure of the Ag{sub 0.5}Rh{sub 0.5} alloy NPs near the Fermi edge was strikingly similar to that of Pd NPs, whose superior hydrogen-storage properties are well known.

  2. Valence band structure of PDMS surface and a blend with MWCNTs: A UPS and MIES study of an insulating polymer

    NASA Astrophysics Data System (ADS)

    Schmerl, Natalya M.; Khodakov, Dmitriy A.; Stapleton, Andrew J.; Ellis, Amanda V.; Andersson, Gunther G.

    2015-10-01

    The use of polydimethylsiloxane (PDMS) is increasing with new technologies working toward compact, flexible and transparent devices for use in medical and microfluidic systems. Electronic characterization of PDMS and other insulating materials is difficult due to charging, yet necessary for many applications where the interfacial structure is vital to device function or further modification. The outermost layer in particular is of importance as this is the area where chemical reactions such as surface functionalization will occur. Here, we investigate the valence band structure of the outermost layer and near surface area of PDMS through the use of metastable induced photoelectron spectroscopy (MIES) paired with ultraviolet photoelectron spectroscopy (UPS). The chemical composition of the samples under investigation were measured via X-ray photoelectron spectroscopy (XPS), and the vertical distribution of the polymer was shown with neutral impact collision ion scattering spectroscopy (NICISS). Three separate methods for charge compensation are used for the samples, and their effectiveness is compared.

  3. Experimental Observation and Theoretical Description of the Pure Fano Effect in the Valence-Band Photoemission of Ferromagnets

    SciTech Connect

    Minar, J.; Ebert, H.; De Nadaie, C.; Brookes, N.B.; Venturini, F.; Ghiringhelli, G.; Chioncel, L.; Katsnelson, M. I.; Lichtenstein, A. I.

    2005-10-14

    The pure Fano effect in angle-integrated valence-band photoemission of ferromagnets has been observed for the first time. A contribution of the intrinsic spin polarization to the spin polarization of the photoelectrons has been avoided by an appropriate choice of the experimental parameters. The theoretical description of the resulting spectra reveals a complete analogy to the Fano effect observed before for paramagnetic transition metals. While the theoretical photocurrent and spin-difference spectra are found in good quantitative agreement with experiment in the case of Fe and Co, only a qualitative agreement could be achieved in the case of Ni by calculations on the basis of plain local spin-density approximation. Agreement with experimental data could be improved in this case in a very substantial way by a treatment of correlation effects on the basis of dynamical mean field theory.

  4. Fano effect in the angle-integrated valence band photoemission of the noble metals Cu, Ag, and Au

    SciTech Connect

    De Nadaie, C.; Brookes, N.B.; Minar, J.; Ebert, H.; Ghiringhelli, G.; Tagliaferri, A.

    2004-10-01

    Results of a combined experimental and theoretical investigation on the Fano-effect in the angle-integrated valence band photoemission of the noble metals are presented. In line with the fact that the Fano-effect is caused by the spin-orbit-coupling, the observed spin polarization of the photocurrent was found to be the more pronounced the higher the atomic number of the element investigated. The ratio of the normalized spin difference curves, however, agreed only for Cu and Ag with the ratio of the corresponding spin-orbit coupling strength parameters. The deviation from this expected behavior in the case of Au could be explained by the properties of individual d-p- and d-f-contributions to the total spin difference curves, that were found to be quite different for Au compared to Cu and Ag.

  5. Inter-layer coupling induced valence band edge shift in mono- to few-layer MoS2

    DOE PAGES

    Trainer, Daniel J.; Putilov, Aleksei V.; Di Giorgio, Cinzia; ...

    2017-01-13

    In this study, recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here,we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap ismore » affected by a shift of the valence band edge as a function of the layer number. Green’s function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.« less

  6. Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2

    PubMed Central

    Trainer, Daniel J.; Putilov, Aleksei V.; Di Giorgio, Cinzia; Saari, Timo; Wang, Baokai; Wolak, Mattheus; Chandrasena, Ravini U.; Lane, Christopher; Chang, Tay-Rong; Jeng, Horng-Tay; Lin, Hsin; Kronast, Florian; Gray, Alexander X.; Xi, Xiaoxing X.; Nieminen, Jouko; Bansil, Arun; Iavarone, Maria

    2017-01-01

    Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green’s function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2. PMID:28084465

  7. Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2

    NASA Astrophysics Data System (ADS)

    Trainer, Daniel J.; Putilov, Aleksei V.; di Giorgio, Cinzia; Saari, Timo; Wang, Baokai; Wolak, Mattheus; Chandrasena, Ravini U.; Lane, Christopher; Chang, Tay-Rong; Jeng, Horng-Tay; Lin, Hsin; Kronast, Florian; Gray, Alexander X.; Xi, Xiaoxing X.; Nieminen, Jouko; Bansil, Arun; Iavarone, Maria

    2017-01-01

    Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green’s function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.

  8. Deduction of the chemical state and the electronic structure of Nd{sub 2}Fe{sub 14}B compound from X-ray photoelectron spectroscopy core-level and valence-band spectra

    SciTech Connect

    Wang, Jing; Liang, Le; Zhang, Lanting E-mail: lmsun@sjtu.edu.cn; Sun, Limin E-mail: lmsun@sjtu.edu.cn; Hirano, Shinichi

    2014-10-28

    Characterization of chemical state and electronic structure of the technologically important Nd{sub 2}Fe{sub 14}B compound is attractive for understanding the physical nature of its excellent magnetic properties. X-ray photoelectron spectroscopy (XPS) study of such rare-earth compound is important and also challenging due to the easy oxidation of surface and small photoelectron cross-sections of rare-earth 4f electrons and B 2p electrons, etc. Here, we reported an investigation based on XPS spectra of Nd{sub 2}Fe{sub 14}B compound as a function of Ar ion sputtering time. The chemical state of Fe and that of B in Nd{sub 2}Fe{sub 14}B compound can be clearly determined to be 0 and −3, respectively. The Nd in Nd{sub 2}Fe{sub 14}B compound is found to have the chemical state of close to +3 instead of +3 as compared with the Nd in Nd{sub 2}O{sub 3}. In addition, by comparing the valence-band spectrum of Nd{sub 2}Fe{sub 14}B compound to that of the pure Fe, the contributions from Nd, Fe, and B to the valence-band structure of Nd{sub 2}Fe{sub 14}B compound is made more clear. The B 2p states and B 2s states are identified to be at ∼11.2 eV and ∼24.6 eV, respectively, which is reported for the first time. The contribution from Nd 4f states can be identified both in XPS core-level spectrum and XPS valence-band spectrum. Although Nd 4f states partially hybridize with Fe 3d states, Nd 4f states are mainly localized in Nd{sub 2}Fe{sub 14}B compound.

  9. Theory of Auger-electron and appearance-potential spectroscopy for interacting valence-band electrons

    NASA Astrophysics Data System (ADS)

    Nolting, W.; Geipel, G.; Ertl, K.

    1991-12-01

    A theory of Auger-electron spectroscopy (AES) and appearance-potential spectroscopy (APS) is presented for interacting electrons in a nondegenerate energy band, described within the framework of the Hubbard model. Both types of spectroscopy are based on the same two-particle spectral density. A diagrammatic vertex-correction method (Matsubara formalism) is used to express this function in terms of the one-particle spectral density. The latter is approximately determined for arbitrary temperature T, arbitrary coupling strength U/W (U, the intra-atomic Coulomb matrix element; W, the width of the ``free'' Bloch band), and arbitrary band occupations n (0<=n<=2 average number of band electrons per site) by a self-consistent moment method. In weakly coupled systems the electron correlations give rise to certain deformations of the quasiparticle density of states (QDOS) in relation to the Bloch density of states (BDOS), where, however, spontaneous magnetic order is excluded, irrespective of the band filling n. The AE (AP) spectra consist of only one structure a few eV wide (``bandlike'') which is strongly n dependent, but only slightly T dependent, being rather well approximated by a simple self-convolution of the occupied (unoccupied) QDOS. For strongly correlated electrons the Bloch band splits into two quasiparticle subbands. This leads for n<1 to one line in the AE spectrum and three lines in the AP spectrum, and vice versa for n>1. For sufficiently strong correlations U/W additional satellites appear that refer to situations where the two excited quasiparticles (quasiholes) propagate as tightly bound pairs through the lattice without being scattered by other charge carriers. As soon as the satellite splits off from the bandlike part of the spectrum, it takes almost the full spectral weight, conveying the impression of an ``atomiclike'' AE (AP) line shape. The satellite has almost exactly the structure of the free BDOS. If the particle density n as well as the hole

  10. AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

    NASA Astrophysics Data System (ADS)

    Banik, Ananya; Biswas, Kanishka

    2016-10-01

    SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report the enhancement of the thermoelectric performance of p-type SnTe by Ag and I co-doping. AgI (1-6 mol%) alloying in SnTe modulates its electronic structure by increasing the band gap of SnTe, which results in decrease in the energy separation between its light and heavy hole valence bands, thereby giving rise to valence band convergence. Additionally, iodine doping in the Te sublattice of SnTe decreases the excess p-type carrier concentration. Due to significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands, significant enhancement in Seebeck coefficient was achieved at the temperature range of 600-900 K for Sn1-xAgxTe1-xIx samples. A maximum thermoelectric figure of merit, zT, of ~1.05 was achieved at 860 K in high quality crystalline ingot of p-type Sn0.95Ag0.05Te0.95I0.05.

  11. Local Bonding Analysis of the Valence and Conduction Band Features of TiO2

    DTIC Science & Technology

    2007-01-01

    nanocrystalline samples tenuous at best. Hence, the phase of the unannealed TiO2 films cannot conclusively be identified as either anatase or rutile...reveals the local physical origin of the electronic structure in nanocrystalline films . TiO2 has further been chosen as a natural starting point to...thickness ratio is 2:1 for TiO2 . This assump- tion has been verified by XPS studies of the substrate Si 2p core-level spectra with film thickness. The

  12. Coupled valence band dispersions and the quantum defect of excitons in Cu2O

    NASA Astrophysics Data System (ADS)

    Schöne, Florian; Krüger, Sjard-Ole; Grünwald, Peter; Aßmann, Marc; Heckötter, Julian; Thewes, Johannes; Stolz, Heinrich; Fröhlich, Dietmar; Bayer, Manfred; Scheel, Stefan

    2016-07-01

    Recent high-resolution absorption spectroscopy on highly excited excitons in cuprous oxide (Kazimierczuk et al 2014 Nature 514 343-347) have revealed significant deviations of their spectrum from the ideal hydrogen-like series. In atomic physics, the influence of the ionic core and the resulting modifications of the Coulomb interaction are accounted for by the introduction of a quantum defect. Here we translate this concept to the realm of semiconductor physics and show how the complex band dispersion of a crystal is mirrored in a set of empirical parameters similar to the quantum defect in atoms. Experimental data collected from high-resolution absorption spectroscopy in electric fields allow us to compare results for multiple angular momentum states of the yellow and even the green exciton series of {{Cu}}2{{O}}. The agreement between theory and experiment validates our assignment of the quantum defect to the nonparabolicity of the band dispersion.

  13. XPS studies of the valence band and of the 4f and 3d levels of Ce hydrides

    NASA Astrophysics Data System (ADS)

    Schlapbach, L.; Osterwalder, J.

    1982-04-01

    We have analyzed the valence band region and the 3d core levels of Ce, CeH 2.1 and CeH 2.9 by means of X-ray photoelectron spectroscopy. Hydrogen induced states appear about 5 eV below E F. The density of states at E F is about 4 times smaller in CeH 2.1 than in Ce and vanishes completely in CeH 2.9 in agreement with the metal to semiconductor transition which was observed in resistivity measurements. The 4f level is well split off the hydrogen induced band at 2 eV for both hydrides. The 3d core levels are shifted by 1.9 and 2.1 eV from Ce to CeH 2.1 and CeH 2.9, resp., and exhibit intense satellites on the low BE side. A simple method to prepare large, compact samples of rare earth hydrides is described.

  14. Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2

    NASA Astrophysics Data System (ADS)

    Alidoust, Nasser; Bian, Guang; Xu, Su-Yang; Sankar, Raman; Neupane, Madhab; Liu, Chang; Belopolski, Ilya; Qu, Dong-Xia; Denlinger, Jonathan D.; Chou, Fang-Cheng; Hasan, M. Zahid

    2014-08-01

    Transition metal dichalcogenides transition metal dichalcogenides have attracted much attention recently due to their potential applications in spintronics and photonics because of the indirect to direct band gap transition and the emergence of the spin-valley coupling phenomenon upon moving from the bulk to monolayer limit. Here, we report high-resolution angle-resolved photoemission spectroscopy on MoSe2 single crystals and monolayer films of MoS2 grown on highly ordered pyrolytic graphite substrate. Our experimental results resolve the Fermi surface trigonal warping of bulk MoSe2, and provide evidence for the critically important spin-orbit split valence bands of monolayer MoS2. Moreover, we systematically image the formation of quantum well states on the surfaces of these materials, and present a theoretical model to account for these experimental observations. Our findings provide important insights into future applications of transition metal dichalcogenides in nanoelectronics, spintronics and photonics devices as they critically depend on the spin-orbit physics of these materials.

  15. Crystal symmetry and pressure effects on the valence band structure of γ -InSe and ɛ -GaSe: Transport measurements and electronic structure calculations

    NASA Astrophysics Data System (ADS)

    Errandonea, D.; Segura, A.; Manjón, F. J.; Chevy, A.; Machado, E.; Tobias, G.; Ordejón, P.; Canadell, E.

    2005-03-01

    This paper reports on Hall effect and resistivity measurements under high pressure up to 3-4 GPa in p -type γ -indium selenide (InSe) (doped with As, Cd, or Zn) and ɛ -gallium selenide (GaSe) (doped with N or Sn). The pressure behavior of the hole concentration and mobility exhibits dramatic differences between the two layered compounds. While the hole concentration and mobility increase moderately and monotonously in ɛ -GaSe, a large increase of the hole concentration near 0.8 GPa and a large continuous increase of the hole mobility, which doubled its ambient pressure value by 3.2 GPa, is observed in γ -InSe. Electronic structure calculations show that the different pressure behavior of hole transport parameters can be accounted for by the evolution of the valence-band maximum in each material under compression. While the shape of the valence band maximum is virtually pressure-insensitive in ɛ -GaSe, it changes dramatically in γ -InSe, with the emergence of a ring-shaped subsidiary maximum that becomes the absolute valence-band maximum as pressure increases. These differences are shown to be a consequence of the presence or absence of a symmetry element (mirror plane perpendicular to the anisotropy axis) in the point group of each polytype ( D3h for the ɛ -polytype and C3v for the γ -polytype), resulting in different selection rules that affect the k⃗•p⃗ interaction between valence bands.

  16. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

    NASA Astrophysics Data System (ADS)

    Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.

    2016-06-01

    A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulator-metal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature Tj is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K ≈ 0.15 and temperature Tj, the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3Tj/2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to Tj hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (-1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the

  17. Vertical photoionization of liquid-to-supercritical ammonia: thermal effects on the valence-to-conduction band gap.

    PubMed

    Urbanek, Janus; Vöhringer, Peter

    2013-07-25

    We recently reported first femtosecond pump–probe experiments on the geminate recombination dynamics of solvated electrons in fluid ammonia (Urbanek et al., J. Phys. Chem. B 2012, 116, 2223–2233). The electrons were generated through a vertical two-photon ionization at a total energy of 9.3 eV. Here, we present a full Monte Carlo analysis of the time-resolved data to determine the solvated electron’s thermalization distance from the ionization hole, NH(3)(+). The simulations are compared with the experiment over wide thermodynamic conditions to obtain insight into the dependence of the vertical ionization mechanism on the electronic properties of the solvent network. The simulations reveal that the average thermalization distance, , decreases strongly with both increasing temperature, T, and decreasing density, ρ, from 3.2 nm in the cryogenic fluid down to roughly 0.5 nm in the dilute supercritical phase with almost gas-like densities. We combine our results with the current understanding of the T,ρ-dependence of the electronic structure of the liquid phase and discuss in detail the role of thermally induced energy level shifts for the valence-to-conduction band gap. The observed changes of the thermalization distance can be well attributed to a gradual decrease of the excess energy initially imparted on the ejected electron as gas-like conditions are progressively approached.

  18. High Power Factor and Enhanced Thermoelectric Performance of SnTe-AgInTe2: Synergistic Effect of Resonance Level and Valence Band Convergence.

    PubMed

    Banik, Ananya; Shenoy, U Sandhya; Saha, Sujoy; Waghmare, Umesh V; Biswas, Kanishka

    2016-10-05

    Understanding the basis of electronic transport and developing ideas to improve thermoelectric power factor are essential for production of efficient thermoelectric materials. Here, we report a significantly large thermoelectric power factor of ∼31.4 μW/cm·K(2) at 856 K in Ag and In co-doped SnTe (i.e., SnAgxInxTe1+2x). This is the highest power factor so far reported for SnTe-based material, which arises from the synergistic effects of Ag and In on the electronic structure and the improved electrical transport properties of SnTe. In and Ag play different but complementary roles in modifying the valence band structure of SnTe. In-doping introduces resonance levels inside the valence bands, leading to a significant improvement in the Seebeck coefficient at room temperature. On the other hand, Ag-doping reduces the energy separation between light- and heavy-hole valence bands by widening the principal band gap, which also results in an improved Seebeck coefficient. Additionally, Ag-doping in SnTe enhances the p-type carrier mobility. Co-doping of In and Ag in SnTe yields synergistically enhanced Seebeck coefficient and power factor over a broad temperature range because of the synergy of the introduction of resonance states and convergence of valence bands, which have been confirmed by first-principles density functional theory-based electronic structure calculations. As a consequence, we have achieved an improved thermoelectric figure of merit, zT ≈ 1, in SnAg0.025In0.025Te1.05 at 856 K.

  19. Valence Band Density of States of Cu3Si Studied by Soft X-Ray Emission Spectroscopy and a First-Principle Molecular Orbital Calculation

    NASA Astrophysics Data System (ADS)

    An, Zhenlian; Kamezawa, Chihiro; Hirai, Masaaki; Kusaka, Masahiko; Iwami, Motohiro

    2002-12-01

    A systematic study of the valence band structure of Cu3Si has been performed by soft X-ray emission spectroscopy and a first-principle molecular orbital calculation using the discrete-variational (DV)-Xα cluster model. The existence of Cu 4s, 4p states in the valence band and their important contributions to the valence band as that of Cu 3d are indicated together with previously reported ones. The high-binding energy peak in the Si L2,3 emission spectrum is considered to originate mainly from the Si-Si 3s bonding state but also have a certain contribution of Si 3s bonding state with Cu 4s, 4p. On the other hand, the low-binding energy peaks in the Si L2,3 emission band are attributed to both the antibonding states of Si 3s and the bonding states of Si 3d with Cu 4s, 4p and Cu 3d. The bonding states of Si 3s with Cu 4s, 4p and Cu 3d are expected to exist in the lower part of the valence band for η\\prime-Cu3Si on the basis of the theoretical calculations. As for Si p states, the high-binding energy peak and the low-binding energy peak in the Si Kβ emission spectrum should be attributed to the Si 3p bonding state and antibonding state with Cu 3d and Cu 4s, 4p, respectively, according to the theoretical calculations. A comparison is made between experimental spectra and theoretical density of states.

  20. Influence of leaching on surface composition, microstructure, and valence band of single grain icosahedral Al-Cu-Fe quasicrystal

    SciTech Connect

    Lowe, M.; McGrath, R.; Sharma, H. R.; Yadav, T. P.; Fournée, V.; Ledieu, J.

    2015-03-07

    The use of quasicrystals as precursors to catalysts for the steam reforming of methanol is potentially one of the most important applications of these new materials. To develop application as a technology requires a detailed understanding of the microscopic behavior of the catalyst. Here, we report the effect of leaching treatments on the surface microstructure, chemical composition, and valence band of the icosahedral (i-) Al-Cu-Fe quasicrystal in an attempt to prepare a model catalyst. The high symmetry fivefold surface of a single grain i-Al-Cu-Fe quasicrystal was leached with NaOH solution for varying times, and the resulting surface was characterized by x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The leaching treatments preferentially remove Al producing a capping layer consisting of Fe and Cu oxides. The subsurface layer contains elemental Fe and Cu in addition to the oxides. The quasicrystalline bulk structure beneath remains unchanged. The subsurface gradually becomes Fe{sub 3}O{sub 4} rich with increasing leaching time. The surface after leaching exhibits micron sized dodecahedral cavities due to preferential leaching along the fivefold axis. Nanoparticles of the transition metals and their oxides are precipitated on the surface after leaching. The size of the nanoparticles is estimated by high resolution transmission microscopy to be 5-20 nm, which is in agreement with the AFM results. Selected area electron diffraction (SAED) confirms the crystalline nature of the nanoparticles. SAED further reveals the formation of an interface between the high atomic density lattice planes of nanoparticles and the quasicrystal. These results provide an important insight into the preparation of model catalysts of nanoparticles for steam reforming of methanol.

  1. Duplication and deletion of chromosome band 2(p21p22) resulting from a familial interstitial insertion (2;11)(p21;p15)

    SciTech Connect

    Sawyer, J.R.; Jones, E.; Hawks, F.F.; Quirk, J.G. Jr.; Cunniff, C.

    1994-02-15

    Routine amniocentesis for advanced maternal age led to the prenatal diagnosis of a fetus with a karyotype of a 46,XX,del(2)(p21p22). At delivery the baby had holopresencephaly as the major clinical finding, which has been associated with a deletion of band 2p21 in several other case reports. Chromosome studies of the parents showed a normal 46,XY karyotype in the father, and a balanced interstitial insertion 46,XX dir ins (11;2)(p15.1;p21p22) in the mother. Subsequent chromosome studies of other relatives documented a 23-year-old half-brother of the proposita with a partial trisomy for the segment deleted in the proposita. The half-brother showed the derivative chromosome 11 from the mother, resulting in a 46,XY,der(11)dup(2)(p21p22) karyotype. Major clinical findings include short stature, mild development delay, and behavior abnormalities. A half-sister of the proposita is also a balanced carrier of the dir ins (11;2)(p15.1;p21p22.2). The association of the deletion chromosome band 2p21 and the clinical finding of holoprosencephaly is further supported by the findings in this family. 9 refs., 5 figs.

  2. Interaction of Cr3+ with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr3+, studied by ENDOR spectroscopy

    NASA Astrophysics Data System (ADS)

    Binet, Laurent; Sharma, Suchinder K.; Gourier, Didier

    2016-09-01

    Cr3+-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of 71/69Ga and 53Cr nuclei was performed in ZnGa2O4:Cr3+ to get information on the interaction of Cr3+ with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the 4A2 ground state of Cr3+ with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited 2E and 4T2 states of Cr3+. It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr3+ in distorted sites undergoing local electric field produced by neighboring defects with opposite charges.

  3. Interaction of Cr(3+) with valence and conduction bands in the long persistent phosphor ZnGa2O4:Cr(3+), studied by ENDOR spectroscopy.

    PubMed

    Binet, Laurent; Sharma, Suchinder K; Gourier, Didier

    2016-09-28

    Cr(3+)-doped zinc gallate ZnGa2O4 is a red-near infrared (IR) long persistent phosphor that can be excited by orange-red light, in the transparency window of living tissues. With this property, persistent luminescence nanoparticles were recently used for in vivo optical imaging of tumors in mice. In order to understand the origin of the excitability of persistent luminescence by visible light in this material, a Q-band ENDOR investigation of (71/69)Ga and (53)Cr nuclei was performed in ZnGa2O4:Cr(3+) to get information on the interaction of Cr(3+) with valence and conduction bands. The positive electron spin density at Ga nuclei revealed a dominant interaction of the (4)A2 ground state of Cr(3+) with the valence band, and a weaker interaction with the conduction band. The latter may occur only in the excited (2)E and (4)T2 states of Cr(3+). It is proposed that when these two interactions are present, pairs of electrons and holes can be generated from excited Cr(3+) in distorted sites undergoing local electric field produced by neighboring defects with opposite charges.

  4. Size and alloying induced shift in core and valence bands of Pd-Ag and Pd-Cu nanoparticles

    SciTech Connect

    Sengar, Saurabh K.; Mehta, B. R.; Govind

    2014-03-28

    In this report, X-ray photoelectron spectroscopy studies have been carried out on Pd, Ag, Cu, Pd-Ag, and Pd-Cu nanoparticles having identical sizes corresponding to mobility equivalent diameters of 60, 40, and 20 nm. The nanoparticles were prepared by the gas phase synthesis method. The effect of size on valence and core levels in metal and alloy nanoparticles has been studied by comparing the values to those with the 60 nm nanoparticles. The effect of alloying has been investigated by comparing the valence and core level binding energies of Pd-Cu and Pd-Ag alloy nanoparticles with the corresponding values for Pd, Ag, and Cu nanoparticles of identical sizes. These effects have been explained in terms of size induced lattice contractions, alloying induced charge transfer, and hybridization effects. The observation of alloying and size induced binding energy shifts in bimetallic nanoparticles is important from the point of view of hydrogen reactivity.

  5. Spectroscopy of neutron-rich {sup 168,170}Dy: Yrast band evolution close to the N{sub p}N{sub n} valence maximum

    SciTech Connect

    Soederstroem, P.-A.; Nyberg, J.; Regan, P. H.; Ashley, S. F.; Catford, W. N.; Gelletly, W.; Jones, G. A.; Liu, Z.; Pietri, S.; Podolyak, Zs.; Steer, S. J.; Thompson, N. J.; Williams, S. J.; Algora, A.; Angelis, G. de; Corradi, L.; Fioretto, E.; Gottardo, A.; Grodner, E.; He, C. Y.

    2010-03-15

    The yrast sequence of the neutron-rich dysprosium isotope {sup 168}Dy has been studied using multinucleon transfer reactions following collisions between a 460-MeV {sup 82}Se beam and an {sup 170}Er target. The reaction products were identified using the PRISMA magnetic spectrometer and the gamma rays detected using the CLARA HPGe-detector array. The 2{sup +} and 4{sup +} members of the previously measured ground-state rotational band of {sup 168}Dy have been confirmed and the yrast band extended up to 10{sup +}. A tentative candidate for the 4{sup +}->2{sup +} transition in {sup 170}Dy was also identified. The data on these nuclei and on the lighter even-even dysprosium isotopes are interpreted in terms of total Routhian surface calculations and the evolution of collectivity in the vicinity of the proton-neutron valence product maximum is discussed.

  6. The observation of valence band change on resistive switching of epitaxial Pr0.7Ca0.3MnO3 film using removable liquid electrode

    NASA Astrophysics Data System (ADS)

    Lee, Hong-Sub; Park, Hyung-Ho

    2015-12-01

    The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr0.7Ca0.3MnO3 (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO3 (100) single crystal as the substrate to observe changes in the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.

  7. Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells

    NASA Astrophysics Data System (ADS)

    Sugiyama, Mutsumi; Murata, Yoshitsuna; Shimizu, Tsubasa; Ramya, Kottadi; Venkataiah, Chinna; Sato, Tomoaki; Ramakrishna Reddy, K. T.

    2011-05-01

    Tin sulphide is considered to be a potential candidate for the development of low cost polycrystalline thin film solar cells. The advantages of using sulfurization process to grow SnS films were demonstrated. Polycrystalline p-type SnS films were obtained by a simple dry process at 300 °C for 90 min. The sulfurization condition depends on the deposition method of the Sn precursor. Using single-phase SnS films, band discontinuities at SnS/CdS and SnO2/SnS heterointerfaces were measured by X-ray photoelectron spectroscopy. The valence band offsets were determined to be approximately 1.5 eV for SnS/CdS and 3.5 eV for SnO2/SnS interfaces. Using these values and the energy band gaps of the corresponding layers, the energy band diagram was developed. It indicated that the SnS/CdS heterojunction is of TYPE-II form of heterostructure. This result indicated that SnS-related solar cells with CdS as window layer do not have an ideal band structure that could give high conversion efficiency.

  8. Valence-band mixing effects in the upper-excited-state magneto-optical responses of colloidal Mn2+-doped CdSe quantum dots.

    PubMed

    Fainblat, Rachel; Muckel, Franziska; Barrows, Charles J; Vlaskin, Vladimir A; Gamelin, Daniel R; Bacher, Gerd

    2014-12-23

    We present an experimental study of the magneto-optical activity of multiple excited excitonic states of manganese-doped CdSe quantum dots chemically prepared by the diffusion doping method. Giant excitonic Zeeman splittings of each of these excited states can be extracted for a series of quantum dot sizes and are found to depend on the radial quantum number of the hole envelope function involved in each transition. As seven out of eight transitions involve the same electron energy state, 1Se, the dominant hole character of each excitonic transition can be identified, making use of the fact that the g-factor of the pure heavy-hole component has a different sign compared to pure light hole or split-off components. Because the magnetic exchange interactions are sensitive to hole state mixing, the giant Zeeman splittings reported here provide clear experimental evidence of quantum-size-induced mixing among valence-band states in nanocrystals.

  9. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

    SciTech Connect

    Liebhaber, M.; Mews, M.; Schulze, T. F.; Korte, L. Rech, B.; Lips, K.

    2015-01-19

    The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.

  10. Valence-band offset and forward-backward charge transfer in manganite/NiO and manganite/LaNiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Ning, X. K.; Wang, Z. J.; Chen, Y. N.; Zhang, Z. D.

    2015-12-01

    The valence-band offset (VBO) of the La0.67Sr0.33MnO3/NiO (LSMO/NiO), LaMnO3/NiO (LMO/NiO), LSMO/LaNiO3 (LSMO/LNO) and LMO/LaNiO3 (LSMO/LNO) heterostructures has been investigated using X-ray photoemission spectroscopy. The VBO values are calculated to be -0.72, -0.05, +1.43 and +1.51 eV for the LSMO/NiO, LSMO/LNO, LMO/LNO and LMO/NiO heterostructures, respectively. Hence, when compared with NiO and LNO, the valence band of LSMO is shifted to a lower binding energy, whereas that of LMO is shifted to a higher binding energy. In addition, the charge transfer at the interfaces has been depicted as Mn3.3+ + 0.7e --> Mn2.6+, Mn3.3+ + 0.1e --> Mn3.2+, Mn3.0+ - 0.4e --> Mn3.4+ and Mn3.0+ - 0.5e --> Mn3.5+ for the LSMO/NiO, LSMO/LNO, LMO/LNO and LMO/NiO heterostructures, respectively. Thus, the charge transfer procedure can be described as electron hopping from NiO and LNO to LSMO in the LSMO/NiO and LSMO/LNO heterostructures, and electron hopping from LMO to NiO and LNO in the LMO/NiO and LSMO/LNO heterostructures. Therefore, the charge transfer is dependent on the VBO, and the charge transfer direction can be determined from the negative or positive values of the VBO.The valence-band offset (VBO) of the La0.67Sr0.33MnO3/NiO (LSMO/NiO), LaMnO3/NiO (LMO/NiO), LSMO/LaNiO3 (LSMO/LNO) and LMO/LaNiO3 (LSMO/LNO) heterostructures has been investigated using X-ray photoemission spectroscopy. The VBO values are calculated to be -0.72, -0.05, +1.43 and +1.51 eV for the LSMO/NiO, LSMO/LNO, LMO/LNO and LMO/NiO heterostructures, respectively. Hence, when compared with NiO and LNO, the valence band of LSMO is shifted to a lower binding energy, whereas that of LMO is shifted to a higher binding energy. In addition, the charge transfer at the interfaces has been depicted as Mn3.3+ + 0.7e --> Mn2.6+, Mn3.3+ + 0.1e --> Mn3.2+, Mn3.0+ - 0.4e --> Mn3.4+ and Mn3.0+ - 0.5e --> Mn3.5+ for the LSMO/NiO, LSMO/LNO, LMO/LNO and LMO/NiO heterostructures, respectively. Thus, the charge transfer

  11. Capture, storage, and emission of holes in Si/Si 1- xGe x/Si QW's for the determination of the valence band offset by DLTS

    NASA Astrophysics Data System (ADS)

    Chretien, O.; Apetz, R.; Vescan, L.; Souifi, A.; Lüth, H.

    1996-08-01

    We report on the problem of the determination of the valence band offset between strained Si 1- xGe x and unstrained Si layers by deep level transient spectroscopy (DLTS) on Si/Si 1- xGe x/Si quantum well (QW) structures. To observe a DLTS signal, the holes must be stored long enough (>1 ms) in the QW so that the thermal emission is the dominating process. We achieved sufficiently long storage times by using two different structures. The first one was obtained by selective growth which leads to a lateral limitation of the QW-layer, where the holes are localized. For the second ones, the localization of holes is due to the presence of Si 1- xGe x-islands.

  12. Association between HRP-2/pLDH rapid diagnostic test band positivity and malaria-related anemia at a peripheral health facility in Western Uganda.

    PubMed

    Boyce, Ross; Reyes, Raquel; Ntaro, Moses; Mulogo, Edgar; Matte, Michael; Boum, Yap; Siedner, Mark J

    2015-12-01

    The detection of severe malaria in resource-constrained settings is often difficult because of requirements for laboratory infrastructure and/or clinical expertise. The aim of this study, therefore, was to explore the utility of a multiple antigen (HRP-2/pLDH) rapid diagnostic test (RDT) as a low-cost, surrogate marker of patients at high risk for complications of severe malaria. We reviewed programmatic data at a peripheral health center in Western Uganda. Available demographic and clinical data on all individuals presenting to the center who underwent an RDT for suspected malaria infection were reviewed. We fit logistic regression models to identify correlates of two outcomes of interest: 1) severe malaria-related anemia, defined here as hemoglobin ≤7g/dL and 2) receipt of parenteral quinine. 1509 patients underwent malaria testing with an SD FK60 RDT during the observation period. A total of 637 (42%) RDTs were positive for at least one species of malaria, of which 326 (51%) exhibited a single HRP-2 band and 307 (48%) exhibited both HRP-2 and pLDH bands, while 4 exhibited only a single pLDH band. There was a trend towards more severe anemia in patients with a HRP-2/pLDH positive RDT compared to a HRP-2 only RDT (β = -0.99 g/dl, 95% CI -1.99 to 0.02, P = 0.055). A HRP-2/pLDH positive RDT was associated with an increased risk of severe malaria-related anemia compared to a negative RDT (adjusted odds ratio (AOR) 18.8, 95% CI 4.32 to 82.0, P < 0.001) and to a HRP-2 only RDT (AOR 2.46, 95% CI 0.75 to 8.04, P = 0.14). There was no significant association between RDT result and the administration of parenteral quinine. These results offer preliminary evidence that specific patterns of antigen positivity on RDTs could be utilized to identify patients at an increased risk for complications of severe malaria.

  13. First-principles study of valence band offsets at ZnSnP2/CdS, ZnSnP2/ZnS, and related chalcopyrite/zincblende heterointerfaces

    NASA Astrophysics Data System (ADS)

    Hinuma, Yoyo; Oba, Fumiyasu; Nose, Yoshitaro; Tanaka, Isao

    2013-07-01

    The valence band offsets of chalcopyrite ZnSnP2 (ZSP), CdSnP2 (CSP), CuInSe2 (CIS), and CuGaSe2 (CGS) against zincblende CdS and ZnS are obtained using first-principles calculations based on hybrid density functional theory. The ZSP-CSP (ZCSP) alloy is isostructural to the CIS-CGS (CIGS) alloy and is known for its potential usage in photovoltaic applications. Therefore, the band offsets with other semiconductors, such as CdS and ZnS, are important. The calculated valence band offsets are ˜1.0 eV for ZSP/CdS and CSP/CdS, ˜1.2 eV for ZSP/ZnS and CSP/ZnS, ˜1.2 eV for CIS/CdS and CGS/CdS, and ˜1.3 eV for CIS/ZnS and CGS/ZnS. The CdS/ZnS valence band offset is within 0.1 eV. Transitivity of natural valence band offsets in the investigated semiconductors holds within ˜0.1 eV, which is smaller than the error in band alignment of ˜0.2 eV when ionization potential differences are used. The ZSP-CSP and CIS-CGS systems have similar valence and conduction band positions, which is an important piece of information for band offset engineering in the development of photovoltaics using ZCSP alloys.

  14. Valence-band offset and forward-backward charge transfer in manganite/NiO and manganite/LaNiO3 heterostructures.

    PubMed

    Ning, X K; Wang, Z J; Chen, Y N; Zhang, Z D

    2015-12-28

    The valence-band offset (VBO) of the La(0.67)Sr(0.33)MnO(3)/NiO (LSMO/NiO), LaMnO(3)/NiO (LMO/NiO), LSMO/LaNiO(3) (LSMO/LNO) and LMO/LaNiO(3) (LSMO/LNO) heterostructures has been investigated using X-ray photoemission spectroscopy. The VBO values are calculated to be -0.72, -0.05, +1.43 and +1.51 eV for the LSMO/NiO, LSMO/LNO, LMO/LNO and LMO/NiO heterostructures, respectively. Hence, when compared with NiO and LNO, the valence band of LSMO is shifted to a lower binding energy, whereas that of LMO is shifted to a higher binding energy. In addition, the charge transfer at the interfaces has been depicted as Mn(3.3+) + 0.7e→ Mn(2.6+), Mn(3.3+) + 0.1e→ Mn(3.2+), Mn(3.0+)- 0.4e→ Mn(3.4+) and Mn(3.0+)- 0.5e→ Mn(3.5+) for the LSMO/NiO, LSMO/LNO, LMO/LNO and LMO/NiO heterostructures, respectively. Thus, the charge transfer procedure can be described as electron hopping from NiO and LNO to LSMO in the LSMO/NiO and LSMO/LNO heterostructures, and electron hopping from LMO to NiO and LNO in the LMO/NiO and LSMO/LNO heterostructures. Therefore, the charge transfer is dependent on the VBO, and the charge transfer direction can be determined from the negative or positive values of the VBO.

  15. Measurement of valence-band offset at native oxide/BaSi{sub 2} interfaces by hard x-ray photoelectron spectroscopy

    SciTech Connect

    Takabe, Ryota; Du, Weijie; Takeuchi, Hiroki; Toko, Kaoru; Ito, Keita; Ueda, Shigenori; Kimura, Akio; Suemasu, Takashi

    2016-01-14

    Undoped n-type BaSi{sub 2} films were grown on Si(111) by molecular beam epitaxy, and the valence band (VB) offset at the interface between the BaSi{sub 2} and its native oxide was measured by hard x-ray photoelectron spectroscopy (HAXPES) at room temperature. HAXPES enabled us to investigate the electronic states of the buried BaSi{sub 2} layer non-destructively thanks to its large analysis depth. We performed the depth-analysis by varying the take-off angle (TOA) of photoelectrons as 15°, 30°, and 90° with respect to the sample surface and succeeded to obtain the VB spectra of the BaSi{sub 2} and the native oxide separately. The VB maximum was located at −1.0 eV from the Fermi energy for the BaSi{sub 2} and −4.9 eV for the native oxide. We found that the band bending did not occur near the native oxide/BaSi{sub 2} interface. This result was clarified by the fact that the core-level emission peaks did not shift regardless of TOA (i.e., analysis depth). Thus, the barrier height of the native oxide for the minority-carriers in the undoped n-BaSi{sub 2} (holes) was determined to be 3.9 eV. No band bending in the BaSi{sub 2} close to the interface also suggests that the large minority-carrier lifetime in undoped n-BaSi{sub 2} films capped with native oxide is attributed not to the band bending in the BaSi{sub 2}, which pushes away photogenerated minority carriers from the defective surface region, but to the decrease of defective states by the native oxide.

  16. Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg0.05Zn0.95O/CIGSe heterojunction by photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Awasthi, Vishnu; Pandey, Sushil Kumar; Kumar, Shailendra; Mukherjee, C.; Gupta, Mukul; Mukherjee, Shaibal

    2015-12-01

    The bandgap alignment of a Ga-doped MgZnO (GMZO)/CIGSe heterojunction exposed to short duration Ar+  ion beam sputtering has been investigated by ultraviolet photoelectron spectroscopy measurement. The offset values at the valence and conduction band of the GMZO/CIGSe hetrojunction are calculated to be 2.69 and  -0.63 eV, respectively. Moreover, the valence band onsets of GMZO and CIGSe thin films before and after few minutes Ar+ ion sputtering have been investigated. The presented study demonstrates the photoelectron-induced generation of resonant valence bulk and surface plasmonic features of various metal and metal oxide nanoclusters embedded within a GMZO matrix. The presence of such nanoclusters is proven to be beneficial in realizing cost-effective, ultra-thin, and high-performance photovoltaics based on the heterojunction.

  17. Valence band study of Sm0.1Ca0.9 - xSrxMnO3 using high resolution photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Dalai, Manas Kumar; Sekhar, Biju Raja; Biswas, Deepnarayan; Thakur, Sangeeta; Maiti, Kalobaran; Chiang, Tai-Chang; Martin, Christine

    2014-03-01

    We have studied the valence band electronic structure of Sm0.1Ca0.9- xSrxMnO3 (x = 0, 0.1, 0.3 and 0.6) at various temperatures using high resolution photoemission spectroscopy (HRPES). The data were taken using a Scienta R4000 energy analyser and the resolution was set at 5 meV. The doping dependent studies of Sm0.1Ca0.9-x SrxMnO3 at 50 K, 100 K and 295 K are quite interesting. The density of eg states near the Fermi level decreases with Sr substitution at the Ca site at 50 K. Also the similar trend has been observed at 100 K. At 295 K the changes in the eg states is quite different than the earlier temperatures where the intensity remains the same for x = 0, 0.1 and 0.3 and then decreases for x = 0.6. These changes in the density of states near the Fermi level will be explained by taking into account the structural, electrical and magnetic properties associated with this system. Permanent affiliation of Manas Kumar Dalai ; CSIR-National Physical Laboratory, New Delhi-110012, India. MKD acknowledges the Indo-US Science and Technology Forum (IUSSTF) for the fellowship.

  18. Valence band electronic structure of Nb2Pd1.2Se5 and Nb2Pd0.95S5 superconductors

    NASA Astrophysics Data System (ADS)

    Lohani, H.; Mishra, P.; Goyal, R.; Awana, V. P. S.; Sekhar, B. R.

    2017-03-01

    We present a comparative study of our valence band photoemission results on Nb2Pd1.2Se5 and Nb2Pd0.95S5 superconductors which are supported by our DFT based electronic structure calculations. We observe that the VB spectra of both the compounds are qualitatively similar, except for some slight differences in the binding energy positions of all the features. This could be due to the unequal electronegativities of Se and S atom. The calculated density of states (DOS) reveals that the VB features are mainly composed of Pd-Se/S hybridized states. The nature of DOS originating from the distinctly coordinated Pd atoms is different. Further, various Pd-4d and Nb-4d states crossing the Fermi level (Ef) signifies the multiband character of these compounds. In addition, we find a temperature dependent pseudogap in Nb2Pd0.95S5 which is absent in Nb2Pd1.2Se5.

  19. Valence band offset at Al{sub 2}O{sub 3}/In{sub 0.17}Al{sub 0.83}N interface formed by atomic layer deposition

    SciTech Connect

    Akazawa, M.; Nakano, T.

    2012-09-17

    The valence band offset, {Delta}E{sub V}, at an Al{sub 2}O{sub 3}/In{sub 0.17}Al{sub 0.83}N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, {Delta}E{sub CL}, between O 1s and In 4d resulted in {Delta}E{sub V} = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, {theta}. However, {Delta}E{sub CL} and full width at half maximum of core-level spectra were dependent on {theta}, which indicated significant potential gradients in Al{sub 2}O{sub 3} and InAlN layers. An actual {Delta}E{sub V} of 1.2 eV was obtained considering the potential gradients.

  20. Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

    SciTech Connect

    King, Sean W. Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus; French, Benjamin

    2014-09-21

    In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

  1. Effects of CeO2 on the XPS valence band spectra of coal under the combustion initialization stage at 400°C

    NASA Astrophysics Data System (ADS)

    Qi, Cheng-lin; Zhang, Jian-liang; Ma, Chao; Feng, Gen-sheng; Song, Zhong-ping

    2013-04-01

    In order to get the catalytic mechanism of CeO2 on graphite and coal at 400°C, the morphologies of coal, graphite, and CeO2 before and after combustion were analyzed through X-ray photoelectron spectroscopy (XPS). It is found that the particle size of coal is mostly between 11.727 and 64.79 μm, while the particle size of CeO2 is between 1.937 and 11.79 μm. The agglomeration of coal and CeO2 can be seen by scanning electron microscopy (SEM) after reaction. XPS results show that with the addition of CeO2, the intensity of binding energy gets stronger, but there is no energy peak transition. Comparing the character of coal with and without the addition of CeO2, it can be seen that the C-C bond fractures first at 400°C, while the C-H energy-band takes electrons at the same time to be far away from the Fermi level, and the O 2s, O 2p, and C sp hybrid orbitals are all excited. Adding CeO2 can enhance the activity of the whole coal. In addition, through XPS analysis, combined with the oxygen transfer theory and the electron transfer theory, the catalytic mechanism of CeO2 for pulverized coal combustion could be obtained.

  2. 335.4 kb microduplication in chromosome band Xp11.2p11.3 associated with developmental delay, growth retardation, autistic disorder and dysmorphic features.

    PubMed

    Alesi, Viola; Bertoli, Marta; Barrano, Giuseppe; Torres, Barbara; Pusceddu, Silvia; Pastorino, Myriam; Perria, Chiara; Nardone, Anna Maria; Novelli, Antonio; Serra, Gigliola

    2012-09-01

    About 10% of causative mutations for mental retardation in male patients involve X chromosome (X-linked mental retardation, XLMR). We describe a case of a 3-year-old boy presenting with developmental delay, autistic features and growth and speech delay. Array-CGH analysis detected a microduplication on the X chromosome (Xp11.2p11.3), spanning 335.4 kb and including 3 known genes (ZNF81, ZNF182 and SPACA5). Genome-wide association studies show that approximately 30% of mutations causing XLMR are located in Xp11.2p11.3, where few pathogenic genes have been identified to date (such as ZNF41, PQB1 and ZNF81). ZNF81 codifies a zinc finger protein and mutations (non-sense mutations, deletions and structural rearrangements) involving this gene have already been described in association with mental retardation. Larger duplications in the same region have also been observed in association with mental retardation, and, in one case, the over-expression of ZNF81 has also been verified by mRNA quantification. No duplications of the single gene have been identified. To our knowledge, the microduplication found in our patient is the smallest ever described in Xp11.2p11.3. This suggests that the over-expression of ZNF81 could have pathological effects.

  3. Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-12-01

    Low leakage current density and high relative permittivity (dielectric constant) are the key factor in order to replace the SiO2 from Si-based technology toward its further downscaling. HfO2 thin films received significant attention due to its excellent optoelectronic properties. In this work, ultra-thin (17 nm) HfO2 films on Si substrate are fabricated by RF sputtering. As deposited films are amorphous in nature and in order to get the reasonable high dielectric constant, the films are annealed (700 °C, 30 min) in nitrogen environment. A high refractive index (2.08) and small grain size ( 10) nm were extracted from ellipsometry and XRD, respectively. The AFM study revealed a small RMS surface roughness 9 Å. For electrical characterization, films are integrated in metal-insulator-semiconductor capacitors structure. The oxide capacitance ( C ox), flat band capacitance ( C FB), flat band voltage ( V FB), and oxide-trapped charges ( Q ot) calculated from high-frequency (1 MHz) C- V curve are 490, 241 pF, 1.21 V and 1.8 × 1012 cm-2, respectively. The dielectric constant calculated from accumulation capacitance is 17. The films show a low leakage current density 6.8 × 10-9 A/cm2 at +1 V, and this is due to the reduction in oxygen vacancies concentration as we performed annealing in N2 environment. The band gap of the films is estimated from O 1 s loss spectra and found 5.7 eV. The electron affinity ( χ) and HfO2/Si barrier height (conduction band offset) extracted from UPS spectra are 1.88 and 2.17 eV, respectively. A trap state with 0.99 eV activation energy below the conduction band edge is found and assigned to the fourfold coordinated oxygen vacancy in m-HfO2.

  4. Experimental study of the valence band of Bi2Se3

    SciTech Connect

    Gao, Yi-Bin; He, Bin; Parker, David; Androulakis, Ioannis; Heremans, Joseph P.

    2014-09-26

    The valence band of Bi2Se3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

  5. Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes

    NASA Astrophysics Data System (ADS)

    Weiler, M. H.; Reine, M. B.

    1995-09-01

    A new analytical model for the bias-dependent quantum efficiency of a HgCdTe P-on-n heterojunction photodiode with a valence band barrier elucidates the important physics of the phenomenon and shows that the background-induced shunt resistance is a result of the same mechanism, that is, a tendency of the light-induced carriers to pile up in the base layer due to the retarding field produced by the barrier. A parameterized version of the model agrees well with experimental current-vs-voltage and noise measurements.

  6. The observation of valence band change on resistive switching of epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} film using removable liquid electrode

    SciTech Connect

    Lee, Hong-Sub; Park, Hyung-Ho

    2015-12-07

    The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO{sub 3} (100) single crystal as the substrate to observe changes in the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.

  7. Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

    NASA Technical Reports Server (NTRS)

    Grunthaner, P. J.; Grunthaner, F. J.; Madhukar, A.

    1982-01-01

    Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

  8. Levels of Valence

    PubMed Central

    Shuman, Vera; Sander, David; Scherer, Klaus R.

    2013-01-01

    The distinction between the positive and the negative is fundamental in our emotional life. In appraisal theories, in particular in the component process model of emotion (Scherer, 1984, 2010), qualitatively different types of valence are proposed based on appraisals of (un)pleasantness, goal obstructiveness/conduciveness, low or high power, self-(in)congruence, and moral badness/goodness. This multifaceted conceptualization of valence is highly compatible with the frequent observation of mixed feelings in real life. However, it seems to contradict the one-dimensional conceptualization of valence often encountered in psychological theories, and the notion of valence as a common currency used to explain choice behavior. Here, we propose a framework to integrate the seemingly disparate conceptualizations of multifaceted valence and one-dimensional valence by suggesting that valence should be conceived at different levels, micro and macro. Micro-valences correspond to qualitatively different types of evaluations, potentially resulting in mixed feelings, whereas one-dimensional macro-valence corresponds to an integrative “common currency” to compare alternatives for choices. We propose that conceptualizing levels of valence may focus research attention on the mechanisms that relate valence at one level (micro) to valence at another level (macro), leading to new hypotheses, and addressing various concerns that have been raised about the valence concept, such as the valence-emotion relation. PMID:23717292

  9. Programming interfacial energetic offsets and charge transfer in β-Pb0.33V2O5/quantum-dot heterostructures: Tuning valence-band edges to overlap with midgap states

    DOE PAGES

    Pelcher, Kate E.; Milleville, Christopher C.; Wangoh, Linda; ...

    2016-12-06

    Here, semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb0.33V2O5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb0.33V2O5 heterostructures prepared by the same methods. Increased valence-band (VB) edge onsetsmore » in X-ray photoelectron spectra for CdS/β-Pb0.33V2O5 heterostructures relative to CdSe/β-Pb0.33V2O5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb0.33V2O5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb0.33V2O5 NWs, along with electron transfer into the conduction band of the β-Pb0.33V2O5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 5—30 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore tunable as a function of the mode of attachment of QDs to NWs, provide a vital design tool for designing architectures for solar energy conversion. More generally, the approach developed here suggests that interfacing

  10. Programming interfacial energetic offsets and charge transfer in β-Pb0.33V2O5/quantum-dot heterostructures: Tuning valence-band edges to overlap with midgap states

    SciTech Connect

    Pelcher, Kate E.; Milleville, Christopher C.; Wangoh, Linda; Cho, Junsang; Sheng, Aaron; Chauhan, Saurabh; Sfeir, Matthew Y.; Piper, Louis F. J.; Watson, David F.; Banerjee, Sarbajit

    2016-12-06

    Here, semiconductor heterostructures for solar energy conversion interface light-harvesting semiconductor nanoparticles with wide-band-gap semiconductors that serve as charge acceptors. In such heterostructures, the kinetics of charge separation depend on the thermodynamic driving force, which is dictated by energetic offsets across the interface. A recently developed promising platform interfaces semiconductor quantum dots (QDs) with ternary vanadium oxides that have characteristic midgap states situated between the valence and conduction bands. In this work, we have prepared CdS/β-Pb0.33V2O5 heterostructures by both linker-assisted assembly and surface precipitation and contrasted these materials with CdSe/β-Pb0.33V2O5 heterostructures prepared by the same methods. Increased valence-band (VB) edge onsets in X-ray photoelectron spectra for CdS/β-Pb0.33V2O5 heterostructures relative to CdSe/β-Pb0.33V2O5 heterostructures suggest a positive shift in the VB edge potential and, therefore, an increased driving force for the photoinduced transfer of holes to the midgap state of β-Pb0.33V2O5. This approach facilitates a ca. 0.40 eV decrease in the thermodynamic barrier for hole injection from the VB edge of QDs suggesting an important design parameter. Transient absorption spectroscopy experiments provide direct evidence of hole transfer from photoexcited CdS QDs to the midgap states of β-Pb0.33V2O5 NWs, along with electron transfer into the conduction band of the β-Pb0.33V2O5 NWs. Hole transfer is substantially faster and occurs at <1-ps time scales, whereas completion of electron transfer requires 5—30 ps depending on the nature of the interface. The differentiated time scales of electron and hole transfer, which are furthermore

  11. [Induction of emotional states during oral reading of texts with different emotional valence and EEG power dynamics in frequency bands beta2 and gamma].

    PubMed

    Dan'ko, S G; Gracheva, L V; Boĭtsova, Iu A; Solov'eva, M L

    2011-01-01

    EEG power in frequency bands beta2 (18.5-29.5 Hz) and low gamma (30-40 Hz) was compared for situations while reading aloud with the technique "self-regulative utterance" texts as follow: a text with neutral emotional-semantic dominant; literary texts with either a positive or a negative emotional-semantic dominant; personal texts--recollections with similar dominants. Two groups of healthy subjects participated--a group of actor students (N=22) and a group of non-actor students (N=23). EEG power values in the states of emotiogenic texts reading are reproducibly differed with statistical significance from those in the state of reading ofa non-emotiogenic text. States of reading emotionally-positive texts are characterized by increases of EEG power in these bands, while those for emotionally negative texts--by decreases if compared with the state of emotionally neutral reading.

  12. Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results

    NASA Astrophysics Data System (ADS)

    Bogdanov, E. V.; Minina, N. Ya.; Tomm, J. W.; Kissel, H.

    2012-11-01

    The effects of uniaxial compression in [110] direction on energy-band structures, heavy and light hole mixing, optical matrix elements, and gain in laser diodes with "light hole up" configuration of valence band levels in GaAsP quantum wells with different widths and phosphorus contents are numerically calculated. The development of light and heavy hole mixing caused by symmetry lowering and converging behavior of light and heavy hole levels in such quantum wells under uniaxial compression is displayed. The light or heavy hole nature of each level is established for all considered values of uniaxial stress. The results of optical gain calculations for TM and TE polarization modes show that uniaxial compression leads to a significant increase of the TE mode and a minor decrease of the TM mode. Electroluminescence experiments were performed under uniaxial compression up to 5 kbar at 77 K on a model laser diode structure (p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs) with y = 0.16 and a quantum well width of 14 nm. They reveal a maximum blue shift of 27 meV of the electroluminescence spectra that is well described by the calculated change of the optical gap and the increase of the intensity being referred to a TE mode enhancement. Numerical calculations and electroluminescence data indicate that uniaxial compression may be used for a moderate wavelength and TM/TE intensity ratio tuning.

  13. Valence band-edge engineering of nickel oxide nanoparticles via cobalt doping for application in p-type dye-sensitized solar cells.

    PubMed

    Natu, Gayatri; Hasin, Panitat; Huang, Zhongjie; Ji, Zhiqiang; He, Mingfu; Wu, Yiying

    2012-11-01

    We have systematically studied the effects of substitutional doping of p-type nanoparticulate NiO with cobalt ions. Thin films of pure and Co-doped NiO nanoparticles with nominal compositions Co(x)Ni(1-x)O(y) (0 ≤ x ≤ 0.1) were fabricated using sol-gel method. X-ray photoelectron spectroscopy revealed a surface enrichment of divalent cobalt ions in the Co(x)Ni(1-x)O(y) nanoparticles. Mott-Schottky analysis in aqueous solutions was used to determine the space charge capacitance values of the films against aqueous electrolytes, which yielded acceptor state densities (N(A)) and apparent flat-band potentials (E(fb)). Both N(A) and E(fb) values of the doped NiO were found to gradually increase with increasing amount of doping; thus the Fermi energy level of the charge carriers decreased with Co-doping. The photovoltage of p-DSCs constructed using the Co(x)Ni(1-x)O(y) films increased with increasing amount of cobalt, as expected from the trend in the E(fb). Co-doping increased both carrier lifetimes within the p-DSCs and the carrier transport times within the nanoparticulate semiconductor network. The nominal composition of Co₀.₀₆Ni₀.₉₄O(y) was found to be optimal for use in p-DSCs.

  14. Band-gap engineering in TiO2-based ternary oxides

    NASA Astrophysics Data System (ADS)

    McLeod, J. A.; Green, R. J.; Kurmaev, E. Z.; Kumada, N.; Belik, A. A.; Moewes, A.

    2012-05-01

    The electronic structure of several ternary oxides (Sn2TiO4, PbTiO3, Bi2Ti4O11, and Bi4Ti3O12) based on binary lone-pair oxides (SnO, PbO, and Bi2O3) and a d0 oxide (TiO2) is investigated using soft x-ray spectroscopy and electronic-structure calculations. We find that the valence band of these ternary oxides is bounded by bonding (at the bottom of the valence band) and antibonding (at the top of the valence band) O 2p lone-pair ns (Sn 5s, Pb 6s, Bi 6s) hybridized states, while the conduction band is dominated by unoccupied Ti 3d states. The existence of these two features is found to be independent of crystal structure or stoichiometry. The calculated hybridization in the bonding O 2p lone-pair ns states is in reasonable agreement with the relative intensity of this feature in the measured x-ray emission spectra. The dominant influence on the conduction and the valence bands in the ternary oxides is due to different aspects of the electronic structure in the parent binary oxides, and we consequently find that the band gap of the ternary oxide is found to be a stoichiometric-weighed addition of the band gaps of the parent oxides.

  15. Comprehensive study of the valence band of standard alkali-metal and indium phosphorus oxide salts through x-ray photoemission spectroscopy and extended Hückel theory tight-binding analysis: A contribution towards the elucidation of local order in oxides on InP surfaces

    NASA Astrophysics Data System (ADS)

    Le Beuze, A.; Lissillour, R.; Quemerais, A.; Agliz, D.; Marchand, R.; Chermette, H.

    1989-05-01

    The evolution of the valence-band shape of the homogeneous series of phosphate compounds from the orthophosphates Na3PO4 and InPO4 to condensed phosphates such as Na4P2O7, of linear polyphosphates NaPO3 and In(PO3)3, of three-dimensional phosphorous oxides P2O5, and of phosphorus oxynitride PON have been investigated by x-ray photoelectron spectroscopy and extended Hückel theory tight-binding band-structure calculations. This study is based partly on an accurate comparison of the experimental and calculated spectra, the latter being corrected by cross-section factors, and partly (by means of calculated partial densities of states and crystal orbital overlap population curves) on the elucidation of the main orbital interactions that generate the specific features of each valence band. Emphasis has been placed not only on the convergence behavior of the shape of the valence bands when PO4 tetrahedra are condensed, eventually yielding infinite covalent networks, but also on the contribution of the cation, especially In3+.

  16. The higher excited electronic states and spin-orbit splitting of the valence band in three-dimensional assemblies of close-packed ZnSe and CdSe quantum dots in thin film form

    SciTech Connect

    Pejova, Biljana

    2008-08-15

    Optical properties of as-deposited and annealed thin films composed of three-dimensional arrays of sphalerite-type ZnSe and CdSe quantum dots (QDs), synthesized by chemical deposition, were investigated. Neglecting the S-D mixing of hole states, the lowest 'band to band' transitions in very small nanoclusters and in bulk-like clusters may be assigned as 1S{yields}1S and 1S{sub {delta}}{yields}1S, and are split by spin-orbit (SO) splitting energy of the bulk material-{delta}. The splitting energy between these transitions was found to be insensitive to QD size variations, which could be explained assuming that 1S hole states arising from valence band {gamma}{sub 7} and {gamma}{sub 8} components do not mix with higher angular momentum states and shift together to higher energies coupled via the isotropic hole mass. This implies significant difference between the SO splitting energies in the two semiconductors. Accounting for S-D mixing of hole states, the observed transitions may be attributed to the fundamental ground state-(1S{sub 3/2}, 1S{sub e}) and the ground state-(1S{sub 1/2}, 1S{sub e}) ones. The observed 'splittings' thus do not correspond exactly to SO splitting energy in both semiconductors, but are complex functions of it, as exact position of each hole energy level depends, besides on {delta}, also on other material-characteristic parameters. - Graphical abstract: Accounting for S-D mixing of hole states, the observed optical transitions in very small sphalerite-type ZnSe and CdSe nanoclusters are attributed to the ground state-(1S{sub 3/2}, 1S{sub e}) and the ground state-(1S{sub 1/2}, 1S{sub e}). The 'splittings' do not correspond to SO splitting energy, but are complex functions of it.

  17. Local atomic structure and the valence band structure of the rhombic-triacontahedral quasicrystal, its 1/1 approximant, and the Mackay-icosahedral quasicrystal in the Al-Mg-Pd alloy system

    NASA Astrophysics Data System (ADS)

    Takeuchi, Tsunehiro; Mizutani, Uichiro; Yamaguchi, Shinji; Fukunaga, Toshiharu; Mizuno, Takayuki; Tanaka, Nobuo

    1998-11-01

    The rhombic-triacontahedral-type quasicrystal (RT-QC), its (1/1, 1/1, 1/1) approximant (RT-1/1) and the Mackay-icosahedral-type quasicrystal (MI-QC) can be formed in the Al-Mg-Pd system. The radial distribution function RDF(r) spectra of the three compounds is derived from neutron diffraction experiments. Powdered x-ray diffraction Rietveld refinement is also carried out to determine the atomic structure of the RT-1/1, and the refined data are converted to the RDF(r). The interatomic distance of the Al-Pd pair in the RT-1/1 and RT-QC is found to be remarkably shortened relative to that calculated from the hard sphere model with Goldschmidt radii. In the MI-QC, the interatomic distance of the Al-Pd pair is further shortened. In addition, the shortening of the interatomic distance is also observed in the Mg-Pd pair. The valence band spectra studied by the x-ray photoemission spectroscopy and soft x-ray spectroscopy clearly show the formation of the bonding and antibonding states associated with the Al-Pd and Mg-Pd atomic pairs in the MI-QC. The results are consistent with the shortening of the interatomic distances derived from the structure analysis. The reason for the possession of the highest resistivity in the MI-QC among the three compounds is attributed to the formation of the covalent bonding between Al-Pd and Mg-Pd atomic pairs.

  18. Energy Correlation among Three Photoelectrons Emitted in Core-Valence-Valence Triple Photoionization of Ne

    SciTech Connect

    Hikosaka, Y.; Soejima, K.; Lablanquie, P.; Penent, F.; Palaudoux, J.; Andric, L.; Shigemasa, E.; Suzuki, I. H.; Nakano, M.; Ito, K.

    2011-09-09

    The direct observation of triple photoionization involving one inner shell and two valence electrons is reported. The energy distribution of the three photoelectrons emitted from Ne is obtained using a very efficient multielectron coincidence method using the magnetic bottle electron spectroscopic technique. A predominance of the direct path to triple photoionization for the formation of Ne{sup 3+} in the 1s2s{sup 2}2p{sup 4} configuration is observed. It is demonstrated that the energy distribution evolves with photon energy and indicates a significant difference with triple photoionization involving only valence electrons.

  19. Electronic energy band structure of the double perovskite Ba2MnWO6.

    PubMed

    Fujioka, Yukari; Frantti, Johannes; Nieminen, Risto M

    2008-06-05

    The electronic and magnetic structures of the double perovskite oxide Ba 2MnWO6 (BMW) were determined by employing the density functional theory within the generalized gradient approximation (GGA) + U approach. BMW is considered a prototype double perovskite due to its high degree of B-site ordering and is a good case study for making a comparison between computations and experiments. By adjusting the U-parameter, the electronic energy band structure and magnetic properties, which were consistent with the experimental results, were obtained. These computations revealed that the valence bands are mainly formed from Mn 3d and O 2p states, while the conduction bands are derived from W 5d and O 2p states. The localized bands composed from Mn 3d states are located in the bandgap. The results imply that the formation of polarons in the conduction band initiate the resonance Raman modes observed as a series of equidistant peaks.

  20. Band gap and band offsets for ultrathin (HfO2)x(SiO2)1-x dielectric films on Si (100)

    NASA Astrophysics Data System (ADS)

    Jin, H.; Oh, S. K.; Kang, H. J.; Cho, M.-H.

    2006-09-01

    Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52eV for (HfO2)0.75(SiO2)0.25 to 6.10eV for (HfO2)0.25(SiO2)0.75, which is much smaller than 8.90eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1eV, which satisfies the minimum requirement for the carrier barrier heights.

  1. Quantitative study of band structure in BaTiO3 particles with vacant ionic sites

    NASA Astrophysics Data System (ADS)

    Oshime, Norihiro; Kano, Jun; Ikeda, Naoshi; Teranishi, Takashi; Fujii, Tatsuo; Ueda, Takeji; Ohkubo, Tomoko

    2016-10-01

    Levels of the conduction band minimum and the valence band maximum in ion-deficient BaTiO3 particles were investigated with optical band gap and ionization energy measurements. Though it is known that the quantification of the band structure in an insulator is difficult, due to the poor electrical conductivity of BaTiO3, systematic variation in the band energy levels was found that correlated with the introduction of vacancies. Photoelectron yield spectroscopy provided direct observation of the occupancy level of electrons, which is altered by the presence of oxygen and barium vacancies. In addition, the conduction band deviation from the vacuum level was determined by optical reflectance spectroscopy. Our results show that: (1) Introduction of oxygen vacancies forms a donor level below the conduction band. (2) The conduction band is shifted to a lower level by a larger number of oxygen vacancies, while the valence band also shifts to a lower level, due to the reduction in the density of O 2p orbitals. (3) Introduction of barium vacancies widens the band gap. Since barium vacancies can induce a small number of oxygen vacancies with accompanying charge compensation, this behavior suppresses any large formation of donor levels in the gap states, indicating that cation vacancies can control the number of both donor and acceptor levels.

  2. Band structure in 113Sn

    NASA Astrophysics Data System (ADS)

    Banerjee, P.; Ganguly, S.; Pradhan, M. K.; Sharma, H. P.; Muralithar, S.; Singh, R. P.; Bhowmik, R. K.

    2016-07-01

    The structure of collective bands in 113Sn, populated in the reaction 100Mo(19F,p 5 n ) at a beam energy of 105 MeV, has been studied. A new positive-parity sequence of eight states extending up to 7764.9 keV and spin (39 /2+) has been observed. The band is explained as arising from the coupling of the odd valence neutron in the g7 /2 or the d5 /2 orbital to the deformed 2p-2h proton configuration of the neighboring even-A Sn isotope. Lifetimes of six states up to an excitation energy of 9934.9 keV and spin 47 /2-belonging to a Δ I =2 intruder band have been measured for the first time, including an upper limit for the last state, from Doppler-shift-attenuation data. A moderate average quadrupole deformation β2=0.22 ±0.02 is deduced from these results for the five states up to spin 43 /2- . The transition quadrupole moments decrease with increase in rotational frequency, indicating a reduction of collectivity with spin, a feature common for terminating bands. The behavior of the kinematic and dynamic moments of inertia as a function of rotational frequency has been studied and total Routhian surface calculations have been performed in an attempt to obtain an insight into the nature of the states near termination.

  3. Structural evolution and valence electron-state change during ultra thin silicon-oxide growth

    NASA Astrophysics Data System (ADS)

    Shimizu, A.; Abe, S.; Nakayama, H.; Nishino, T.; Iida, S.

    2000-06-01

    We have studied valence electron-state changes of Si during initial oxidation of Si(111) clean surface, HF-treated Si(001) and Si(111) surfaces by Auger valence electron spectroscopy (AVES). The results showed that the valence electron-state changes during initial oxidation were sensitively reflected in Si[2s,2p,V] (V=3s,3p) AVES spectra and that they depended on both initial surface treatment and surface orientation. The local valence electron-states, local density of states in other words, showed the characteristic-structure evolution depending on the initial surface treatment and surface orientation.

  4. Multiple valence superatoms.

    PubMed

    Reveles, J U; Khanna, S N; Roach, P J; Castleman, A W

    2006-12-05

    We recently demonstrated that, in gas phase clusters containing aluminum and iodine atoms, an Al(13) cluster behaves like a halogen atom, whereas an Al(14) cluster exhibits properties analogous to an alkaline earth atom. These observations, together with our findings that Al(13)(-) is inert like a rare gas atom, have reinforced the idea that chosen clusters can exhibit chemical behaviors reminiscent of atoms in the periodic table, offering the exciting prospect of a new dimension of the periodic table formed by cluster elements, called superatoms. As the behavior of clusters can be controlled by size and composition, the superatoms offer the potential to create unique compounds with tailored properties. In this article, we provide evidence of an additional class of superatoms, namely Al(7)(-), that exhibit multiple valences, like some of the elements in the periodic table, and hence have the potential to form stable compounds when combined with other atoms. These findings support the contention that there should be no limitation in finding clusters, which mimic virtually all members of the periodic table.

  5. Optical properties of mixed-valence platinum halides

    NASA Astrophysics Data System (ADS)

    Albin, Michael; Patterson, Howard H.

    1980-08-01

    Temperature dependent absorption spectra are reported for PtX 2-4 -PtX 2-6 doped in Cs 2ZrX 6 (X = Cl, Br). Intense, broad bands have been assigned as mixed-valence (MV) transitions. Vibronic structure has been observed for the MV bromide system. Our results are discussed in terms of a model proposed by Hush.

  6. Racah materials: role of atomic multiplets in intermediate valence systems

    PubMed Central

    Shick, A. B.; Havela, L.; Lichtenstein, A. I.; Katsnelson, M. I.

    2015-01-01

    We address the long-standing mystery of the nonmagnetic insulating state of the intermediate valence compound SmB6. Within a combination of the local density approximation (LDA) and an exact diagonalization (ED) of an effective discrete Anderson impurity model, the intermediate valence ground state with the f-shell occupation 〈n4f〉 = 5.6 is found for the Sm atom in SmB6. This ground state is a singlet, and the first excited triplet state ~3 meV higher in the energy. SmB6 is a narrow band insulator already in LDA, with the direct band gap of ~10 meV. The electron correlations increase the band gap which now becomes indirect. Thus, the many-body effects are relevant to form the indirect band gap, crucial for the idea of “topological Kondo insulator" in SmB6. Also, an actinide analog PuB6 is considered, and the intermediate valence singlet ground state is found for the Pu atom. We propose that [Sm, Pu]B6 belong to a new class of the intermediate valence materials with the multi-orbital “Kondo-like" singlet ground-state. Crucial role of complex spin-orbital f  n–f  n+1 multiplet structure differently hybridized with ligand states in such Racah materials is discussed. PMID:26490021

  7. VizieR Online Data Catalog: Transition rates on 2s2p3 configurations in N+ (Shen+, 2016)

    NASA Astrophysics Data System (ADS)

    Shen, X.; Liu, J.; Zhou, F.

    2016-07-01

    Wavefunctions were determined using the Multi-Configuration Dirac-Hartree-Fock (MCDHF) method. The core-core, core-valence, valence correlation, Breit interaction and quantum electrodynamics (QED) effects, as well as some higher order correlation effects, were considered to obtain accurate wavelengths (lambda), oscillator strengths (gf) and transition rates (A) of 2s22p2-2s2p3, 2s2p3-2s22pnl (n>=3) and 2s2p3-2s2p23s E1 transitions. (2 data files).

  8. Finite valence nucleon number and rotation-vibration interactions

    NASA Astrophysics Data System (ADS)

    Casten, R. F.; Jolie, J.; Cakirli, R. B.; Couture, A.

    2016-12-01

    Background: A characteristic observable of nuclear collective motion is the relative B (E 2 ) values from the γ band to the ground band in even-even deformed nuclei. The Alaga rules provide an idealized set of benchmarks for these observables. However, deviations from the Alaga rules are universally observed and have been traditionally and successfully interpreted in terms of parameterized γ -band-ground-band bandmixing. An alternate approach, partial dynamical symmetries, has no bandmixing whatsoever and is parameter free, yet mimics closely the effects of bandmixing, due solely to the effects of finite valence nucleon number. Purpose: To investigate the relation between these two seemingly contradictory approaches to understand how they can produce such similar results. Method: To derive approximate relations between the two formalisms. Results: A consistent relationship is found linking bandmixing to finite valence nucleon number effects on interband γ to ground-band B (E 2 ) values. Conclusions: Two disparate approaches to one of the iconic characteristics of deformed nuclei are shown to be intimately related. Moreover, a systematic difference in their predictions also emerges naturally from the derivation. The qualitative linkage of valence nucleon number and the separation of vibrational and rotational degrees of freedom has long been assumed but never before explicitly demonstrated through complementary models.

  9. Event valence and unrealistic optimism.

    PubMed

    Gold, Ron S; Martyn, Kate

    2003-06-01

    The effect of event valence on unrealistic optimism was studied. 94 Deakin University students rated the comparative likelihood that they would experience either a controllable or an uncontrollable health-related event. Valence was manipulated to be positive (outcome was desirable) or negative (outcome was undesirable) by varying the way a given event was framed. Participants either were told the conditions which promote the event and rated the comparative likelihood they would experience it or were told the conditions which prevent the event and rated the comparative likelihood they would avoid it. For both the controllable and the uncontrollable events, unrealistic optimism was greater for negative than positive valence. It is suggested that a combination of the 'motivational account' of unrealistic optimism and prospect theory provides a good explanation of the results.

  10. Valence quark spin distribution functions

    SciTech Connect

    Nathan Isgur

    1998-09-01

    The hyperfine interactions of the constituent quark model provide a natural explanation for many nucleon properties, including the {Delta} - N splitting, the charge radius of the neutron, and the observation that the proton's quark distribution function ratio d(x)/u(x) {r_arrow} 0 as x {r_arrow} 1. The hyperfine-perturbed quark model also makes predictions for the nucleon spin-dependent distribution functions. Precision measurements of the resulting asymmetries A{sub 1}{sup p}(x) and A{sub 1}{sup n}(x) in the valence region can test this model and thereby the hypothesis that the valence quark spin distributions are ''normal''.

  11. Conduction-band electronic states of YbInCu{sub 4} studied by photoemission and soft x-ray absorption spectroscopies

    SciTech Connect

    Utsumi, Yuki; Kurihara, Hidenao; Maso, Hiroyuki; Tobimatsu, Komei; Sato, Hitoshi; Shimada, Kenya; Namatame, Hirofumi; Hiraoka, Koichi; Kojima, Kenichi; Ohkochi, Takuo; Fujimori, Shin-ichi; Takeda, Yukiharu; Saitoh, Yuji; Mimura, Kojiro; Ueda, Shigenori; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Kobayashi, Keisuke; Oguchi, Tamio; Taniguchi, Masaki

    2011-09-15

    We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu{sub 4} by means of temperature-dependent hard x-ray photoemission spectroscopy (HX-PES) of the Cu 2p{sub 3/2} and In 3d{sub 5/2} core states taken at h{nu}=5.95 keV, soft x-ray absorption spectroscopy (XAS) of the Cu 2p{sub 3/2} core absorption region around h{nu}{approx}935 eV, and soft x-ray photoemission spectroscopy (SX-PES) of the valence band at the Cu 2p{sub 3/2} absorption edge of h{nu}=933.0 eV. With decreasing temperature below the valence transition at T{sub V}=42 K, we have found that (1) the Cu 2p{sub 3/2} and In 3d{sub 5/2} peaks in the HX-PES spectra exhibit the energy shift toward the lower binding-energy side by {approx}40 and {approx}30 meV, respectively, (2) an energy position of the Cu 2p{sub 3/2} main absorption peak in the XAS spectrum is shifted toward higher photon-energy side by {approx}100 meV, with an appearance of a shoulder structure below the Cu 2p{sub 3/2} main absorption peak, and (3) an intensity of the Cu L{sub 3}VV Auger spectrum is abruptly enhanced. These experimental results suggest that the Fermi level of the CB-derived density of states is shifted toward the lower binding-energy side. We have described the valence transition in YbInCu{sub 4} in terms of the charge transfer from the CB to Yb 4f states.

  12. Energies and E1, M1, E2, M2 transition rates for states of the 2s{sup 2}2p, 2s2p{sup 2}, and 2p{sup 3} configurations in boron-like ions between N III and Zn XXVI

    SciTech Connect

    Rynkun, P.; Joensson, P.; Gaigalas, G.; Froese Fischer, C.

    2012-07-15

    Energies, E1, M1, E2, M2 transition rates, line strengths, oscillator strengths, and lifetimes from relativistic configuration interaction calculations are reported for the states of the (1s{sup 2})2s{sup 2}2p, 2s2p{sup 2}, and 2p{sup 3} configurations in all boron-like ions between N III and Zn XXVI. Valence, core-valence, and core-core correlation effects were accounted for through single-double multireference (SD-MR) expansions to increasing sets of active orbitals.

  13. Valence band of LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4} and its effects on the voltage profiles of LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4}/Li electrochemical cells

    SciTech Connect

    Gao, Y.; Myrtle, K.; Zhang, M. |; Reimers, J.N.; Dahn, J.R.

    1996-12-01

    A high-voltage plateau at 4.7 V in LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4}/Li electrochemical cells appears with the introduction of Ni into the LiMn{sub 2}O{sub 4} spinel. The capacity of the 4.7-V plateau increases linearly at the expense of the 4.1-V plateau as {ital x} increases. Using ultraviolet photoelectron spectroscopy, we have studied the top of the valence band of LiNi{sub {ital x}}Mn{sub 2{minus}{ital x}}O{sub 4} for a series of samples with 0.0{le}{ital x}{le}0.5. A component attributed to Ni 3{ital d} electrons was found at about 0.5-eV higher binding energy than the Mn 3{ital d} {ital e}{sub {ital g}} electrons. We propose that the increased voltage of the 4.7-V plateau is due to the increased energy required to remove electrons from Ni 3{ital d} levels compared to Mn 3{ital d} {ital e}{sub {ital g}} levels. {copyright} {ital 1996 The American Physical Society.}

  14. Valence holes observed in nanodiamonds dispersed in water.

    PubMed

    Petit, Tristan; Pflüger, Mika; Tolksdorf, Daniel; Xiao, Jie; Aziz, Emad F

    2015-02-21

    Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp(2)-hybridized carbon disappear, and holes in the valence band are observed.

  15. Unusual valence state and metal-insulator transition in BaV10O15 probed by hard x-ray photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Yoshino, T.; Okawa, M.; Kajita, T.; Dash, S.; Shimoyama, R.; Takahashi, K.; Takahashi, Y.; Takayanagi, R.; Saitoh, T.; Ootsuki, D.; Yoshida, T.; Ikenaga, E.; Saini, N. L.; Katsufuji, T.; Mizokawa, T.

    2017-02-01

    We have studied the electronic structure of BaV10O15 across the metal-insulator transition with V trimerization by means of hard-x-ray photoemission spectroscopy (HAXPES) and mean-field calculations. The V 2 p HAXPES indicates V2.5 +-V3 + charge fluctuation in the metallic phase, and V2+-V3+ charge order in the insulating phase. The V2.5 +-V3 + charge fluctuation is consistent with the mean-field solution where a V 3 d a1 g electron is shared by two V sites with face-sharing VO6 octahedra. The valence-band HAXPES of the metallic phase exhibits pseudogap opening at the Fermi level associated with the charge fluctuation, and a band gap ˜200 meV is established in the insulating phase due to the switching of charge correlation.

  16. Valency configuration of transition metal impurities in ZnO

    SciTech Connect

    Petit, Leon; Schulthess, Thomas C; Svane, Axel; Temmerman, Walter M; Szotek, Zdzislawa; Janotti, Anderson

    2006-01-01

    We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM=Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn{sub 1-x}TM{sub x}O, the localized TM{sup 2+} configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy {epsilon}F close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with {epsilon}F close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.

  17. Study on the energy band structure and photoelectrochemical performances of spinel Li{sub 4}Ti{sub 5}O{sub 12}

    SciTech Connect

    Ge, Hao; Tian, Hui; Song, Hua; Liu, Daliang; Wu, Shuyao; Shi, Xicheng; Gao, Xiaoqiang; Lv, Li; Song, Xi-Ming

    2015-01-15

    Highlights: • Spinel Li{sub 4}Ti{sub 5}O{sub 12} possesses more positive potential of valence band and wider band gap than TiO{sub 2}. • Spinel Li{sub 4}Ti{sub 5}O{sub 12} displays typical n-type semiconductor characteristic and excellent UV-excitateded photocatalysis activity. • Our preliminary study will open new perspectives in investigation of other lithium-based compounds for new photocatalysts. - Abstract: Energy band structure, photoelectrochemical performances and photocatalysis activity of spinel Li{sub 4}Ti{sub 5}O{sub 12} are investigated for the first time in this paper. Li{sub 4}Ti{sub 5}O{sub 12} possesses more positive valence band potential and wider band gap than TiO{sub 2} due to its valence band consisting of Li{sub 1s} and Ti{sub 3d} orbitals mixed with O{sub 2p}. Li{sub 4}Ti{sub 5}O{sub 12} shows typical photocatalysis material characteristics and excellent photocatlytic activity under UV irradiation.

  18. Aesthetic valence of visual illusions

    PubMed Central

    Stevanov, Jasmina; Marković, Slobodan; Kitaoka, Akiyoshi

    2012-01-01

    Visual illusions constitute an interesting perceptual phenomenon, but they also have an aesthetic and affective dimension. We hypothesized that the illusive nature itself causes the increased aesthetic and affective valence of illusions compared with their non-illusory counterparts. We created pairs of stimuli. One qualified as a standard visual illusion whereas the other one did not, although they were matched in as many perceptual dimensions as possible. The phenomenal quality of being an illusion had significant effects on “Aesthetic Experience” (fascinating, irresistible, exceptional, etc), “Evaluation” (pleasant, cheerful, clear, bright, etc), “Arousal” (interesting, imaginative, complex, diverse, etc), and “Regularity” (balanced, coherent, clear, realistic, etc). A subsequent multiple regression analysis suggested that Arousal was a better predictor of Aesthetic Experience than Evaluation. The findings of this study demonstrate that illusion is a phenomenal quality of the percept which has measurable aesthetic and affective valence. PMID:23145272

  19. Refined Synthesis and Crystal Growth of Pb{sub 2}P{sub 2}Se{sub 6} for Hard Radiation Detectors.

    SciTech Connect

    Wang, Peng L.; Kostina, Svetlana S.; Meng, Fang; Kontsevoi, Oleg Y.; Liu, Zhifu; Chen, Pice; Peters, John A.; Hanson, Micah; He, Yihui; Chung, Duck Young; Freeman, Arthur J.; Wessels, Bruce W.; Kanatzidis, Mercouri G.

    2016-09-01

    The refined synthesis and optimized crystal growth of high quality Pb2P2Se6 single crystals are reported. Improved experimental procedures were implemented to reduce the oxygen contamination and improve the stoichiometry of the single crystal samples. The impact of oxygen contamination and the nature of the stoichiometry deviation in the Pb2P2Se6 system were studied by first-principles density functional theory (DFT) electronic structure calculations as well as experimental methods. The DFT calculations indicated that the presence of interstitial oxygen atoms (O-int) leads to the formation of a deep level located near the middle of the gap, as well as a shallow acceptor level near the valence band maximum. In addition, total energy calculations of the heat of formation of Pb2P2Se6 suggest that the region of thermodynamic stability is sufficiently wide. By refining the preparative procedures, high quality Pb2P2Se6 single crystal samples were reproducibly obtained. These Pb2P2Se6 single crystals exhibited excellent optical transparency, electrical resistivity in the range of 10(11) Omega.cm, and a significant increase in photoconductivity. Infrared photoluminescence of the Pb2P2Se6 single crystals was observed over the temperature range of 15-75 K. Detectors fabricated from boules yielded a clear spectroscopic response to both Ag K alpha X-ray and Co-57 gamma-ray radiation. The electron and hole mobility lifetime product (mu tau) of the current Pb2P2Se6 detectors were estimated to be 3.1 x 10(-4) and 4.8 X 10(-5) cm(2)/V, respectively.

  20. In-Medium Pion Valence Distribution Amplitude

    NASA Astrophysics Data System (ADS)

    Tsushima, K.; de Melo, J. P. B. C.

    2017-03-01

    After a brief review of the quark-based model for nuclear matter, and some pion properties in medium presented in our previous works, we report new results for the pion valence wave function as well as the valence distribution amplitude in medium, which are presented in our recent article. We find that both the in-medium pion valence distribution and the in-medium pion valence wave function, are substantially modified at normal nuclear matter density, due to the reduction in the pion decay constant.

  1. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

    NASA Astrophysics Data System (ADS)

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K.; Venkatesan, T.; Ang, Kah-Wee

    2015-12-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec).

  2. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier

    PubMed Central

    Ling, Zhi-Peng; Sakar, Soumya; Mathew, Sinu; Zhu, Jun-Tao; Gopinadhan, K.; Venkatesan, T.; Ang, Kah-Wee

    2015-01-01

    Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties. Among other issues, achieving good ohmic contacts with low source-drain parasitic resistance in BP field-effect transistors (FET) remains a challenge. For the first time, we report a new contact technology that employs the use of high work function nickel (Ni) and thermal anneal to produce a metal alloy that effectively reduces the contact Schottky barrier height (ΦB) in a BP FET. When annealed at 300 °C, the Ni electrode was found to react with the underlying BP crystal and resulted in the formation of nickel-phosphide (Ni2P) alloy. This serves to de-pin the metal Fermi level close to the valence band edge and realizes a record low hole ΦB of merely ~12 meV. The ΦB at the valence band has also been shown to be thickness-dependent, wherein increasing BP multi-layers results in a smaller ΦB due to bandgap energy shrinkage. The integration of hafnium-dioxide high-k gate dielectric additionally enables a significantly improved subthreshold swing (SS ~ 200 mV/dec), surpassing previously reported BP FETs with conventional SiO2 gate dielectric (SS > 1 V/dec). PMID:26667402

  3. The electronic properties of mixed valence hydrated europium chloride thin film.

    PubMed

    Silly, M G; Charra, F; Lux, F; Lemercier, G; Sirotti, F

    2015-07-28

    We investigate the electronic properties of a model mixed-valence hydrated chloride europium salt by means of high resolution photoemission spectroscopy (HRPES) and resonant photoemission spectroscopy (RESPES) at the Eu 3d → 4f and 4d → 4f transitions. From the HRPES spectra, we have determined that the two europium oxidation states are homogeneously distributed in the bulk and that the hydrated salt film is exempt from surface mixed valence transition. From the RESPES spectra, the well separated resonant contributions characteristic of divalent and trivalent europium species (4f(6) and 4f(7) final states, respectively) are accurately extracted and quantitatively determined from the resonant features measured at the two edges. The partial absorption yield spectra, obtained by integrating the photoemission intensity in the valence-band region, can be well reproduced by atomic multiplet calculation at the M(4,5) (3d-4f) absorption edge and by an asymmetric Fano-like shape profile at the N(4,5) (4d-4f) absorption edge. The ratio of Eu(2+) and Eu(3+) species measured at the two absorption edges matches with the composition of the mixed valence europium salt as determined chemically. We have demonstrated that the observed spectroscopic features of the mixed valence salt are attributed to the mixed-valence ground state rather than surface valence transition. HRPES and RESPES spectra provide reference spectra for the study of europium salts and their derivatives.

  4. Materials with intermediate valence ; a comparison with transition metals

    NASA Astrophysics Data System (ADS)

    Mott, N. F.

    A discussion of metallic intermediate valence materials is given, particularly of hybridisation between the 4f and the conduction band δ. If n, 1 - n are the numbers of ions in each of two charge states, the variation of n with temperature is described. Resistivity is ascribed to scattering of the conduction electrons into the 4f band. The mechanism is compared with that in transition metals and their alloys, particularly Pd1-xAg x. The resistivity can be very large, of order of the Ioffe-Regel value 1/3 e2/ħa. It is argued that both here and in metallic alloys, this can only occur with a two-band model. At high temperatures there is some evidence that s-f scattering does not occur. On discute des matériaux métalliques à valence intermédiaire, en particulier de l'hybridation entre la bande 4f et la bande de conduction. Notant n et 1 - n les nombres d'ions dans chacun des deux états de charge, on décrit la variation de n avec la température. Le mécanisme est comparé avec celui des métaux de transition et de leurs alliages, particulièrement Pd1-xAg x. La résistivité peut être très grande, de l'ordre de la valeur de Ioffe-Regel 1/3 e2/ħa. On donne des arguments tendant à prouver que ceci ne peut se produire que dans le cadre d'un modèle à 2 bandes. Il y a des évidences qu'à haute température la diffusion s-f n'a pas lieu.

  5. Theoretical and Experimental Study of the Crystal Structures, Lattice Vibrations, and Band Structures of Monazite-Type PbCrO4, PbSeO4, SrCrO4, and SrSeO4.

    PubMed

    Errandonea, Daniel; Muñoz, Alfonso; Rodríguez-Hernández, Placida; Proctor, John E; Sapiña, Fernando; Bettinelli, Marco

    2015-08-03

    The crystal structures, lattice vibrations, and electronic band structures of PbCrO4, PbSeO4, SrCrO4, and SrSeO4 were studied by ab initio calculations, Raman spectroscopy, X-ray diffraction, and optical-absorption measurements. Calculations properly describe the crystal structures of the four compounds, which are isomorphic to the monazite structure and were confirmed by X-ray diffraction. Information is also obtained on the Raman- and IR-active phonons, with all of the vibrational modes assigned. In addition, the band structures and electronic densities of states of the four compounds were determined. All are indirect-gap semiconductors. In particular, chromates are found to have band gaps smaller than 2.5 eV and selenates higher than 4.3 eV. In the chromates (selenates), the upper part of the valence band is dominated by O 2p states and the lower part of the conduction band is composed primarily of electronic states associated with the Cr 3d and O 2p (Se 4s and O 2p) states. Calculations also show that the band gap of PbCrO4 (PbSeO4) is smaller than the band gap of SrCrO4 (SrSeO4). This phenomenon is caused by Pb states, which, to some extent, also contribute to the top of the valence band and the bottom of the conduction band. The agreement between experiments and calculations is quite good; however, the band gaps are underestimated by calculations, with the exception of the bang gap of SrCrO4, for which theory and calculations agree. Calculations also provide predictions of the bulk modulus of the studied compounds.

  6. Analysis of Impurity Band Formation and Related Effects Near the P/N Junction in Compensated GaAs and Si.

    DTIC Science & Technology

    1986-09-01

    levels are shifted with respect to the edge of the conduction or valence band, forming impurity tands and causing changes in the band gap. In addition...Levels, (d) Densities of States for Conduction Band and Donor Levels, and (e) Densities of States for Acceptor Levels and Valence Band. Each Fig.(page...acceptor state distributions and the density-of-states data for the valence band. The horizontal axis is in this case referred to the edge of

  7. Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy

    NASA Astrophysics Data System (ADS)

    Kitatani, Takeshi; Kondow, Masahiko; Kikawa, Takeshi; Yazawa, Yoshiaki; Okai, Makoto; Uomi, Kazuhisa

    1999-09-01

    We used X-ray photoelectron spectroscopy (XPS) to measure the energy discontinuity in the valence band (ΔEv) of Ga1-xNxAs/AlAs (x=0, 0.014, 0.034) and estimated ΔEv of GaNAs/GaAs by using the Al2p energy level as a reference. The change in ΔEv for GaNAs/GaAs with an increasing nitrogen content was -(0.019±0.053) eV/%N. This suggests that the valence-band edge (Ev) in GaNAs decreases in proportion to the nitrogen content. Based on the decrease in the bandgap energy of GaNAs, we found that the energy discontinuity in the conduction band (ΔEc) of GaNAs/GaAs is -(0.175±0.053) eV/%N. This large effect of bandgap bowing on the conduction band indicates that an ideal carrier confinement in the well can be obtained by using GaInNAs as an active layer in long-wavelength laser diodes.

  8. The Valence Bond Interpretation of Molecular Geometry.

    ERIC Educational Resources Information Center

    Smith, Derek W.

    1980-01-01

    Presents ways in which the valence bond (VB) theory describes the bonding and geometry of molecules, following directly from earlier principles laid down by Pauling and others. Two other theories (molecular orbital approach and valence shell electron pair repulsion) are discussed and compared to VB. (CS)

  9. Valence-Bond Theory and Chemical Structure.

    ERIC Educational Resources Information Center

    Klein, Douglas J.; Trinajstic, Nenad

    1990-01-01

    Discussed is the importance of valence bond theory on the quantum-mechanical theory of chemical structure and the nature of the chemical bond. Described briefly are early VB theory, development of VB theory, modern versions, solid-state applications, models, treatment in textbooks, and flaws in criticisms of valence bond theory. (KR)

  10. Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques

    NASA Astrophysics Data System (ADS)

    Limaye, Mukta V.; Chen, S. C.; Lee, C. Y.; Chen, L. Y.; Singh, Shashi B.; Shao, Y. C.; Wang, Y. F.; Hsieh, S. H.; Hsueh, H. C.; Chiou, J. W.; Chen, C. H.; Jang, L. Y.; Cheng, C. L.; Pong, W. F.; Hu, Y. F.

    2015-06-01

    The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2- (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2- species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2-, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples.

  11. Band alignment of HfO2/In0.18Al0.82N determined by angle-resolved x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Owen, Man Hon Samuel; Bhuiyan, Maruf Amin; Zhang, Zheng; Pan, Ji Sheng; Tok, Eng Soon; Yeo, Yee-Chia

    2014-07-01

    The band-alignment of atomic layer deposited (ALD)-HfO2/In0.18Al0.82N was studied by high resolution angle-resolved X-ray photoelectron spectroscopy measurements. The band bending near the HfO2/In0.18Al0.82N interface was investigated, and the potential variation across the interface was taken into account in the band alignment calculation. It is observed that the binding energies for N 1s and Al 2p in In0.18Al0.82N decreases and the corresponding extracted valence band offsets increases with increasing θ (i.e., closer to the HfO2/In0.18Al0.82N interface), as a result of an upward energy band bending towards the HfO2/In0.18Al0.82N interface. The resultant valence band offset and the conduction band offset for the ALD-HfO2/In0.18Al0.82N interface calculated was found to be 0.69 eV and 1.01 eV, respectively.

  12. Band calculation of lonsdaleite Ge

    NASA Astrophysics Data System (ADS)

    Chen, Pin-Shiang; Fan, Sheng-Ting; Lan, Huang-Siang; Liu, Chee Wee

    2017-01-01

    The band structure of Ge in the lonsdaleite phase is calculated using first principles. Lonsdaleite Ge has a direct band gap at the Γ point. For the conduction band, the Γ valley is anisotropic with the low transverse effective mass on the hexagonal plane and the large longitudinal effective mass along the c axis. For the valence band, both heavy-hole and light-hole effective masses are anisotropic at the Γ point. The in-plane electron effective mass also becomes anisotropic under uniaxial tensile strain. The strain response of the heavy-hole mass is opposite to the light hole.

  13. Avoided valence transition in a plutonium superconductor

    PubMed Central

    Ramshaw, B. J.; Shekhter, Arkady; McDonald, Ross D.; Betts, Jon B.; Mitchell, J. N.; Tobash, P. H.; Mielke, C. H.; Bauer, E. D.; Migliori, Albert

    2015-01-01

    The d and f electrons in correlated metals are often neither fully localized around their host nuclei nor fully itinerant. This localized/itinerant duality underlies the correlated electronic states of the high-Tc cuprate superconductors and the heavy-fermion intermetallics and is nowhere more apparent than in the 5f valence electrons of plutonium. Here, we report the full set of symmetry-resolved elastic moduli of PuCoGa5—the highest Tc superconductor of the heavy fermions (Tc = 18.5 K)—and find that the bulk modulus softens anomalously over a wide range in temperature above Tc. The elastic symmetry channel in which this softening occurs is characteristic of a valence instability—therefore, we identify the elastic softening with fluctuations of the plutonium 5f mixed-valence state. These valence fluctuations disappear when the superconducting gap opens at Tc, suggesting that electrons near the Fermi surface play an essential role in the mixed-valence physics of this system and that PuCoGa5 avoids a valence transition by entering the superconducting state. The lack of magnetism in PuCoGa5 has made it difficult to reconcile with most other heavy-fermion superconductors, where superconductivity is generally believed to be mediated by magnetic fluctuations. Our observations suggest that valence fluctuations play a critical role in the unusually high Tc of PuCoGa5. PMID:25737548

  14. Avoided valence transition in a plutonium superconductor.

    PubMed

    Ramshaw, B J; Shekhter, Arkady; McDonald, Ross D; Betts, Jon B; Mitchell, J N; Tobash, P H; Mielke, C H; Bauer, E D; Migliori, Albert

    2015-03-17

    The d and f electrons in correlated metals are often neither fully localized around their host nuclei nor fully itinerant. This localized/itinerant duality underlies the correlated electronic states of the high-Tc cuprate superconductors and the heavy-fermion intermetallics and is nowhere more apparent than in the 5f valence electrons of plutonium. Here, we report the full set of symmetry-resolved elastic moduli of PuCoGa5--the highest Tc superconductor of the heavy fermions (Tc = 18.5 K)--and find that the bulk modulus softens anomalously over a wide range in temperature above Tc. The elastic symmetry channel in which this softening occurs is characteristic of a valence instability--therefore, we identify the elastic softening with fluctuations of the plutonium 5f mixed-valence state. These valence fluctuations disappear when the superconducting gap opens at Tc, suggesting that electrons near the Fermi surface play an essential role in the mixed-valence physics of this system and that PuCoGa5 avoids a valence transition by entering the superconducting state. The lack of magnetism in PuCoGa5 has made it difficult to reconcile with most other heavy-fermion superconductors, where superconductivity is generally believed to be mediated by magnetic fluctuations. Our observations suggest that valence fluctuations play a critical role in the unusually high Tc of PuCoGa5.

  15. Valence holes observed in nanodiamonds dispersed in water

    NASA Astrophysics Data System (ADS)

    Petit, Tristan; Pflüger, Mika; Tolksdorf, Daniel; Xiao, Jie; Aziz, Emad F.

    2015-02-01

    Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed.Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed. Electronic supplementary information (ESI) available: Experimental methods, details on XAS/XES normalization and background correction procedures. See DOI: 10.1039/c4nr06639a

  16. Electron momentum spectroscopy study of amantadine: binding energy spectra and valence orbital electron density distributions

    NASA Astrophysics Data System (ADS)

    Litvinyuk, I. V.; Zheng, Y.; Brion, C. E.

    2000-11-01

    The electron binding energy spectrum and valence orbital electron momentum density distributions of amantadine (1-aminoadamantane), an important anti-viral and anti-Parkinsonian drug, have been measured by electron momentum spectroscopy. Theoretical momentum distributions, calculated at the 6-311++G** and AUG-CC-PVTZ levels within the target Hartree-Fock and also the target Kohn-Sham density functional theory approximations, show good agreement with the experimental results. The results for amantadine are also compared with those for the parent molecule, adamantane, reported earlier (Chem. Phys. 253 (2000) 41). Based on the comparison tentative assignments of the valence region ionization bands of amantadine have been made.

  17. Energies, E1, M1, and E2 transition rates, hyperfine structures, and Lande g{sub J} factors for states of the 2s{sup 2}2p{sup 2}, 2s2p{sup 3}, and 2p{sup 4} configurations in carbon-like ions between F IV and Ni XXIII

    SciTech Connect

    Joensson, P.; Rynkun, P.; Gaigalas, G.

    2011-11-15

    Energies, electric dipole, magnetic dipole, and electric quadrupole transition rates, hyperfine structures, and Lande g{sub J} factors from relativistic configuration interaction calculations are reported for the states of the (1s{sup 2})2s{sup 2}2p{sup 2}, 2s2p{sup 3}, and 2p{sup 4} configurations in all carbon-like ions between F IV and Ni XXIII. Valence, core-valence, and core-core correlation effects were accounted for through single/double-excitation-multireference expansions to increasing sets of active orbitals. The calculated energy levels generally agree within a few hundred cm{sup -1} with the experimentally compiled results, and the Babushkin (length), and Coulomb (velocity) forms of transition rates agree within less than 1% for a majority of the allowed transitions.

  18. Characterization of P2P Systems

    NASA Astrophysics Data System (ADS)

    Stutzbach, Daniel; Rejaie, Reza

    The combination of large scale and geographically distributed nature of P2P system has led to their significant impact on the Internet. It is essential to characterize deployed P2P system for at least three reasons: (1) Accurately assessing their impact on the Internet, (2) identifying any performance bottleneck as well as any opportunity for performance improvement, (3) understanding user-driven dynamics in P2P systems. To characterize a P2P system, one needs to accurately capture snapshots of the resulting P2P overlay. This is challenging because the overlay is often large and dynamic. While the overlay is discovered by a crawler, it is changing which leads to a distorted view of the system. Capturing unbiased view of the traffic in the overlay is equally challenging because it is difficult to show that the captured behavior represent the observed behavior by all peers. In this chapter, we describe some of the fundamental problems in empirical characterization of widely deployed P2P systems. We present several examples to illustrate the effect of ad-hoc measurement/data collection on the resulting analysis/characterization. We then present two sampling techniques as a powerful approach to capture unbiased view of peer properties in a scalable fashion.

  19. High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness

    SciTech Connect

    Barth, Michael; Datta, Suman; Bruce Rayner, G.; McDonnell, Stephen; Wallace, Robert M.; Bennett, Brian R.; Engel-Herbert, Roman

    2014-12-01

    We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8 nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.

  20. Core and valence level photoemission and photoabsorption study of icosahedral Al Pd Mn quasicrystals

    NASA Astrophysics Data System (ADS)

    Horn, K.; Theis, W.; Paggel, J. J.; Barman, S. R.; Rotenberg, E.; Ebert, Ph; Urban, K.

    2006-01-01

    The electronic structure of quasicrystalline Al-Pd-Mn is investigated by means of valence and core level photoelectron spectroscopy. Variations of the photoionization cross section in the constituents' valence electronic levels as a function of photon energy are used to identify contributions from the different atomic species, in particular near the Pd 4d Cooper minimum. Resonant photoemission at the Mn 2p absorption edge shows the contribution of the Mn 3d states to the density of states in a region near the Fermi level. The asymmetry of Pd 3d and Mn 2p core level photoemission lines, and its difference for emission from metallic and quasicrystalline phases, are utilized to infer the contributions of the different constituents to the density of states at the Fermi level.

  1. The valence electronic structure and conformational flexibility of epichlorohydrin.

    PubMed

    Stranges, S; Alagia, M; Decleva, P; Stener, M; Fronzoni, G; Toffoli, D; Speranza, M; Catone, D; Turchini, S; Prosperi, T; Zema, N; Contini, G; Keheyan, Y

    2011-07-21

    The electronic structure of epichlorohydrin is investigated in the whole valence region by a combined experimental and theoretical study. The issue of controversial assignments of the molecular electronic structure is here addressed. Photoelectron spectra (PES) and Threshold Photoelectron spectra (TPES) of room temperature molecules in the gas phase are recorded. Geometries and energies of the stable conformers due to internal rotation of the C-C-C-Cl dihedral angle, gauche-II (g-II), gauche-I (g-I), and cis, are calculated, and the effect of the conformational flexibility on the photoionization energetics is studied by DFT and 2h-1p Configuration Interaction (CI) methods. Strong breakdown of the Koopmans Theorem (KT) is obtained for the four outermost ionizations, which are further investigated by higher level ab initio calculations. The full assignment of the spectrum is put on a firm basis by the combination of experimental and theoretical results. The orbital composition from correlated calculations is found closer to the DFT orbitals, which are then used to analyze the electronic structure of the molecule. The Highest Occupied Molecular Orbital (HOMO) and HOMO--2 are n(O)/n(Cl) mixed orbitals. The nature of each valence MO is generally preserved in all the conformers, although the magnitude of the n(O)/n(Cl) mixing in HOMO and HOMO--2 varies to some extent with the C-C-C-Cl dihedral angle. The low energy part of the HOMO PE band is predicted to be substantially affected by the conformational flexibility, as experimentally observed in the spectra. The rest of the spectrum is described in terms of the dominant conformer g-II, and a good agreement between experiment and theory is found. The inner-valence PE spectrum is characterized by satellite structures, due to electron correlation effects, which are interpreted by means of 2h-1p CI calculations.

  2. From Ba3Ta5O14N to LaBa2Ta5O13N2: Decreasing the optical band gap of a photocatalyst

    NASA Astrophysics Data System (ADS)

    Anke, B.; Bredow, T.; Pilarski, M.; Wark, M.; Lerch, M.

    2017-02-01

    Yellow LaBa2Ta5O13N2 was successfully synthesized as phase-pure material crystallizing isostructurally to previously reported Ba3Ta5O14N and mixed-valence Ba3TaV4TaIVO15. The electronic structure of LaBa2Ta5O13N2 was studied theoretically with the range-separated hybrid method HSE06. The most stable structure was obtained when lanthanum was placed on 2a and nitrogen on 4h sites confirming Pauling's second rule. By incorporating nitrogen, the measured band gap decreases from ∼3.8 eV for the oxide via 2.74 eV for Ba3Ta5O14N to 2.63 eV for the new oxide nitride, giving rise to an absorption band well in the visible-light region. Calculated fundamental band gaps confirm the experimental trend. The atom-projected density of states has large contributions from N2p orbitals close to the valence band edge. These are responsible for the observed band gap reduction. Photocatalytic hydrogen formation was investigated and compared with that of Ba3Ta5O14N revealing significantly higher activity for LaBa2Ta5O13N2 under UV-light.

  3. Photoionization of iodine atoms: Rydberg series which converge to the I{sup +}({sup 1}S{sub 0})<-I({sup 2}P{sub 3/2}) threshold

    SciTech Connect

    Eypper, Marie; Innocenti, Fabrizio; Morris, Alan; Dyke, John M.; Stranges, Stefano; West, John B.; King, George C.

    2010-06-28

    Relative partial photoionization cross sections and angular distribution parameters {beta} have been measured for the first and fourth (5p){sup -1} photoelectron (PE) bands of atomic iodine by performing angle-resolved constant-ionic-state (CIS) measurements on these PE bands between the {sup 1}D{sub 2} and {sup 1}S{sub 0} (5p){sup -1} ionic thresholds in the photon energy region of 12.9-14.1 eV. Rydberg series arising from the 5p{yields}ns and 5p{yields}nd excitations are observed in both the first PE band, I{sup +}({sup 3}P{sub 2})<-I({sup 2}P{sub 3/2}), and the fourth PE band, I{sup +}({sup 1}D{sub 2})<-I({sup 2}P{sub 3/2}), CIS spectra. For each Rydberg state, the resonance energy, quantum defect, linewidth, line shape, and photoelectron angular distribution parameter {beta} have been determined. For the {beta}-plots for each PE band, only resonances corresponding to 5p{yields}nd excitations are observed; no resonances were seen at photon energies corresponding to the 5p{yields}ns resonances in the CIS spectra. The {beta}-plots are interpreted in terms of the parity unfavored channel with j{sub t}=4 being the major contributor at the 5p{yields}nd resonance positions, where j{sub t} is the quantum number for angular momentum transferred between the molecule, and the ion and photoelectron. Comparison of the results obtained with those published for bromine shows reasonably good agreement for the CIS spectra but poor agreement for the {beta}-plots. It appears that parity unfavored channels are playing a greater role in the valence (np){sup -1} ionization of atomic iodine than in the corresponding ionization of atomic bromine.

  4. Anonymity in P2P Systems

    NASA Astrophysics Data System (ADS)

    Manzanares-Lopez, Pilar; Muñoz-Gea, Juan Pedro; Malgosa-Sanahuja, Josemaria; Sanchez-Aarnoutse, Juan Carlos

    In the last years, the use of peer-to-peer (P2P) applications to share and exchange knowledge among people around the world has experienced an exponential growth. Therefore, it is understandable that, like in any successful communication mechanism used by a lot of humans being, the anonymity can be a desirable characteristic in this scenario. Anonymity in P2P networks can be obtained by means of different methods, although the most significant ones are broadcast protocols, dining-cryptographer (DC) nets and multiple-hop paths. Each of these methods can be tunable in order to build a real anonymity P2P application. In addition, there is a mathematical tool called entropy that can be used in some scenarios to quantify anonymity in communication networks. In some cases, it can be calculated analytically but in others it is necessary to use simulation to obtain the network entropy.

  5. Multicolor emission from intermediate band semiconductor ZnO1−xSex

    PubMed Central

    Welna, M.; Baranowski, M.; Linhart, W. M.; Kudrawiec, R.; Yu, K. M.; Mayer, M.; Walukiewicz, W.

    2017-01-01

    Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E− and upper E+ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications. PMID:28287140

  6. Multicolor emission from intermediate band semiconductor ZnO1‑xSex

    NASA Astrophysics Data System (ADS)

    Welna, M.; Baranowski, M.; Linhart, W. M.; Kudrawiec, R.; Yu, K. M.; Mayer, M.; Walukiewicz, W.

    2017-03-01

    Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E‑ and upper E+ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.

  7. Molybdenum Valence in Basaltic Silicate Melts

    NASA Technical Reports Server (NTRS)

    Danielson, L. R.; Righter, K.; Newville, M.; Sutton, S.; Pando, K.

    2010-01-01

    The moderately siderophile element molybdenum has been used as an indicator in planetary differentiation processes, and is particularly relevant to core formation [for example, 1-6]. However, models that apply experimental data to an equilibrium differentiation scenario infer the oxidation state of molybdenum from solubility data or from multivariable coefficients from metal-silicate partitioning data [1,3,7]. Partitioning behavior of molybdenum, a multivalent element with a transition near the J02 of interest for core formation (IW-2) will be sensitive to changes in JO2 of the system and silicate melt structure. In a silicate melt, Mo can occur in either 4+ or 6+ valence state, and Mo6+ can be either octahedrally or tetrahedrally coordinated. Here we present first XANES measurements of Mo valence in basaltic run products at a range of P, T, and JO2 and further quantify the valence transition of Mo.

  8. Valence-quark distributions in the pion

    SciTech Connect

    Hecht, M. B.; Roberts, C. D.; Schmidt, S. M.

    2001-02-01

    We calculate the pion's valence-quark momentum-fraction probability distribution using a Dyson-Schwinger equation model. Valence quarks with an active mass of 0.30 GeV carry 71% of the pion's momentum at a resolving scale q{sub 0}=0.54 GeV=1/(0.37 fm). The shape of the calculated distribution is characteristic of a strongly bound system and, evolved from q{sub 0} to q=2 GeV, it yields first, second, and third moments in agreement with lattice and phenomenological estimates, and valence-quarks carrying 49% of the pion's momentum. However, pointwise there is a discrepancy between our calculated distribution and that hitherto inferred from parametrizations of extant pion-nucleon Drell-Yan data.

  9. 2p radioactivity studied by tracking technique

    SciTech Connect

    Mukha, Ivan

    2010-06-01

    The recent advance in experimental studies of short-lived exotic nuclei beyond the proton drip line is presented. In particular, in-flight decays of proton-unbound nuclei with picosecond lifetimes can be probed by a novel technique which tracks all decay products precisely, and the decay vertices as well as the angular correlations of the fragments are deduced from the measured trajectories. The corresponding pioneering experiment which identified a previously-unknown isotope {sup 19}Mg and its two-proton (2p) radioactivity as well as studied the reference 2p decay of the known isotope {sup 16}Ne is described. Systematic studies of other 2p precursors beyond the proton drip line are foreseen with this powerful technique whose sensitivity is larger by factor of 30 in comparison with a conventional invariant-mass method. The 2p radioactivity candidates {sup 30}Ar, {sup 34}Ca and {sup 26}S are discussed. Information about the respective one-proton unbound nuclei can be obtained with this technique by evaluating proton-heavy-fragment correlations. Systematic studies of nuclei beyond the proton drip line, e.g., the well-known proton resonances above the 'waiting points' in the astrophysical rp-process, {sup 69}Br and {sup 73}Br are feasible.

  10. Affective Priming with Associatively Acquired Valence

    ERIC Educational Resources Information Center

    Aguado, Luis; Pierna, Manuel; Saugar, Cristina

    2005-01-01

    Three experiments explored the effect of affectively congruent or incongruent primes on evaluation responses to positive or negative valenced targets (the "affective priming" effect). Experiment 1 replicated the basic affective priming effect with Spanish nouns: reaction time for evaluative responses (pleasant/unpleasant) were slower on…

  11. Valence transition in the periodic Anderson model

    NASA Astrophysics Data System (ADS)

    Hübsch, A.; Becker, K. W.

    2006-08-01

    A very rich phase diagram has recently been found in CeCu2Si2 from high pressure experiments where, in particular, a transition between an intermediate valence configuration and an integral valent heavy fermion state has been observed. We show that such a valence transition can be understood in the framework of the periodic Anderson model. In particular, our results show a breakdown of a mixed-valence state which is accompanied by a drastic change in the f occupation in agreement with experiment. This valence transition can possibly be interpreted as a collapse of the large Fermi surface of the heavy fermion state which incorporates not only the conduction electrons but also the localized f electrons. The theoretical approach used in this paper is based on the novel projector-based renormalization method (PRM). With respect to the periodic Anderson model, the method was before only employed in combination with the basic approximations of the well-known slave-boson mean-field theory. In this paper, the PRM treatment is performed in a more sophisticated manner where both mixed as well as integral valent solutions have been obtained. Furthermore, we argue that the presented PRM approach might be a promising starting point to study the competing interactions in CeCu2Si2 and related compounds.

  12. Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Craciun, V.

    2017-04-01

    One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (ΔEV) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of ΔEV = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔEC = 0.65 ± 0.05 eV in HfO2/IZO heterostructure was then obtained.

  13. Predicting the band gap of ternary oxides containing 3d10 and 3d0 metals

    NASA Astrophysics Data System (ADS)

    McLeod, J. A.; Moewes, A.; Zatsepin, D. A.; Kurmaev, E. Z.; Wypych, A.; Bobowska, I.; Opasinska, A.; Cholakh, S. O.

    2012-11-01

    We present soft x-ray spectroscopy measurements and electronic structure calculations of ZnTiO3, a ternary oxide that is related to wurtzite ZnO and rutile TiO2. The electronic structure of ZnTiO3 was calculated using a variety of exchange-correlation functionals, and we compare the predicted band gaps of this material obtained from each functional with estimates from our experimental data and optical gaps quoted from the literature. We find that the main hybridizations in the electronic structure of ZnTiO3 can be predicted from the electronic structures of the two binary oxides. We further find that ZnTiO3 has weaker O 2p-Zn 3d repulsion than in ZnO, resulting in a relatively lower valence band maximum and consequently a larger band gap. Although we find a significant core hole shift in the measured O K XAS of ZnTiO3, we provide a simple empirical scheme for estimating the band gap that may prove to be applicable for any d10-d0 ternary oxide, and could be useful in finding a ternary oxide with a band gap tailored to a specific energy.

  14. Data Sharing in P2P Systems

    NASA Astrophysics Data System (ADS)

    Hayek, Rabab; Raschia, Guillaume; Valduriez, Patrick; Mouaddib, Noureddine

    In this chapter, we survey P2P data sharing systems. All along, we focus on the evolution from simple file-sharing systems, with limited functionalities, to Peer Data Management Systems (PDMS) that support advanced applications with more sophisticated data management techniques. Advanced P2P applications are dealing with semantically rich data (e.g., XML documents, relational tables), using a high-level SQL-like query language. We start our survey with an overview over the existing P2P network architectures, and the associated routing protocols. Then, we discuss data indexing techniques based on their distribution degree and the semantics they can capture from the underlying data. We also discuss schema management techniques which allow integrating heterogeneous data. We conclude by discussing the techniques proposed for processing complex queries (e.g., range and join queries). Complex query facilities are necessary for advanced applications which require a high level of search expressiveness. This last part shows the lack of querying techniques that allow for an approximate query answering.

  15. Self-trapped exciton and core-valence luminescence in BaF{sub 2} nanoparticles

    SciTech Connect

    Vistovskyy, V. V. Zhyshkovych, A. V.; Chornodolskyy, Ya. M.; Voloshinovskii, A. S.; Myagkota, O. S.; Gloskovskii, A.; Gektin, A. V.; Vasil'ev, A. N.; Rodnyi, P. A.

    2013-11-21

    The influence of the BaF{sub 2} nanoparticle size on the intensity of the self-trapped exciton luminescence and the radiative core-valence transitions is studied by the luminescence spectroscopy methods using synchrotron radiation. The decrease of the self-trapped exciton emission intensity at energies of exciting photons in the range of optical exciton creation (hν ≤ E{sub g}) is less sensitive to the reduction of the nanoparticle sizes than in the case of band-to-band excitation, where excitons are formed by the recombination way. The intensity of the core-valence luminescence shows considerably weaker dependence on the nanoparticle sizes in comparison with the intensity of self-trapped exciton luminescence. The revealed regularities are explained by considering the relationship between nanoparticle size and photoelectron or photohole thermalization length as well as the size of electronic excitations.

  16. Relativistic CI calculations of spectroscopic data for the 2p{sup 6} and 2p{sup 5}3l configurations in Ne-like ions between Mg III and Kr XXVII

    SciTech Connect

    Jönsson, P.; Bengtsson, P.; Ekman, J.; Gustafsson, S.; Karlsson, L.B.; Gaigalas, G.; Froese Fischer, C.; Kato, D.; Murakami, I.; Sakaue, H.A.; Hara, H.; Watanabe, T.; Nakamura, N.; Yamamoto, N.

    2014-01-15

    Energies, E1, M1, E2, M2 transition rates, oscillator strengths, and lifetimes from relativistic configuration interaction calculations are reported for the states of the 2p{sup 6}, 2p{sup 5}3s, 2p{sup 5}3p, and 2p{sup 5}3d, configurations in all Ne-like ions between Mg III and Kr XXVII. Core–valence and core–core correlation effects are accounted for through single and double excitations to increasing sets of active orbitals. The Breit interaction and leading quantum electrodynamic effects are included as perturbations. The results are compared with experiments and other recent benchmark calculations. In Mg III, Al IV, Si V, P VI, S VII, and Ar IX, for which experimental energies are known to high accuracy, the mean error in the calculated energies is only 0.011%.

  17. Energy band alignment at the nanoscale

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Fortunato, Elvira; Martins, Rodrigo; Klein, Andreas

    2017-01-01

    The energy band alignments at interfaces often determine the electrical functionality of a device. Along with the size reduction into the nanoscale, functional coatings become thinner than a nanometer. With the traditional analysis of the energy band alignment by in situ photoelectron spectroscopy, a critical film thickness is needed to determine the valence band offset. By making use of the Auger parameter, it becomes possible to determine the energy band alignment to coatings, which are only a few Ångström thin. This is demonstrated with experimental data of Cu2O on different kinds of substrate materials.

  18. Distinct cerebellar lobules process arousal, valence and their interaction in parallel following a temporal hierarchy.

    PubMed

    Styliadis, Charis; Ioannides, Andreas A; Bamidis, Panagiotis D; Papadelis, Christos

    2015-04-15

    The cerebellum participates in emotion-related neural circuits formed by different cortical and subcortical areas, which sub-serve arousal and valence. Recent neuroimaging studies have shown a functional specificity of cerebellar lobules in the processing of emotional stimuli. However, little is known about the temporal component of this process. The goal of the current study is to assess the spatiotemporal profile of neural responses within the cerebellum during the processing of arousal and valence. We hypothesized that the excitation and timing of distinct cerebellar lobules is influenced by the emotional content of the stimuli. By using magnetoencephalography, we recorded magnetic fields from twelve healthy human individuals while passively viewing affective pictures rated along arousal and valence. By using a beamformer, we localized gamma-band activity in the cerebellum across time and we related the foci of activity to the anatomical organization of the cerebellum. Successive cerebellar activations were observed within distinct lobules starting ~160ms after the stimuli onset. Arousal was processed within both vermal (VI and VIIIa) and hemispheric (left Crus II) lobules. Valence (left VI) and its interaction (left V and left Crus I) with arousal were processed only within hemispheric lobules. Arousal processing was identified first at early latencies (160ms) and was long-lived (until 980ms). In contrast, the processing of valence and its interaction to arousal was short lived at later stages (420-530ms and 570-640ms respectively). Our findings provide for the first time evidence that distinct cerebellar lobules process arousal, valence, and their interaction in a parallel yet temporally hierarchical manner determined by the emotional content of the stimuli.

  19. Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As

    SciTech Connect

    Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy; Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z.; Sadowski, Janusz

    2013-12-04

    Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

  20. New route to the mixed valence semiquinone-catecholate based mononuclear FeIII and catecholate based dinuclear MnIII complexes: first experimental evidence of valence tautomerism in an iron complex.

    PubMed

    Shaikh, Nizamuddin; Goswami, Sanchita; Panja, Anangamohan; Wang, Xin-Yi; Gao, Song; Butcher, Ray J; Banerjee, Pradyot

    2004-09-20

    The semiquinone-catecholate based mixed valence complex, [FeIII(bispicen)(Cl4Cat)(Cl4SQ)] x DMF (1), and catecholate based (H2bispictn)[Mn2III(Cl4Cat)4(DMF)2] (2) (bispicen = N,N'-bis(2-pyridylmethyl)-1,2-ethanediamine, bispictn = N,N'-bis(2-pyridylmethyl)-1,3-propanediamine, Cl4Cat = tetrachlorocatecholate dianion, and Cl4SQ = tetrachlorosemiquinone radical anion) were synthesized directly utilizing a facile route. Both the complexes have been characterized by single crystal X-ray diffraction study. The electronic structures have been elucidated by UV-vis-NIR absorption spectroscopy, cyclic voltammetry, EPR, and magnetic properties. The structural as well as spectroscopic features support the mixed valence tetrachlorosemiquinone-tetrachlorocatecholate charge distribution in 1. The ligand based mixed valence state was further confirmed by the presence of an intervalence charge transfer (IVCT) band in the 1900 nm region both in solution and in the solid. The intramolecular electron transfer, a phenomenon known as valence tautomerism (VT), has been followed by electronic absorption spectroscopy. For 1, the isomeric form [FeIII(bispicen)(Cl4Cat)(Cl4SQ)] is favored at low temperature, while at an elevated temperature, the [FeII(bispicen)(Cl4SQ)2] redox isomer dominates. Infrared as well as UV-vis-NIR spectral characterization for 2 suggest that the MnIII(Cat)2- moiety is admixed with its mixed valence semiquinone-catecholate isomer MnII(SQ)(Cat)-, and the electronic absorption spectrum is dominated by the mixed charged species. The origin of the intervalence charge transfer band in the 1900 nm range is associated with the mixed valence form, MnII(Cl4Cat)(Cl4SQ)-. The observation of VT in complex 1 is the first example where a mixed valence semiquinone-catecholate iron(III) complex undergoes intramolecular electron transfer similar to manganese and cobalt complexes.

  1. Physics of Resonating Valence Bond Spin Liquids

    NASA Astrophysics Data System (ADS)

    Wildeboer, Julia Saskia

    This thesis will investigate various aspects of the physics of resonating valence bond spin liquids. After giving an introduction to the world that lies beyond Landau's priciple of symmetry breaking, e.g. giving an overview of exotic magnetic phases and how they can be described and (possibly) found, we will study a spin-rotationally invariant model system with a known parent Hamiltonian, and argue its ground state to lie within a highly sought after exotic phase, namely the Z2 quantum spin liquid phase. A newly developed numerical procedure --Pfaffian Monte Carlo-- will be introduced to amass evidence that our model Hamiltonian indeed exhibits a Z2 quantum spin liquid phase. Subsequently, we will prove a useful mathematical property of the resonating valence bond states: these states are shown to be linearly independent. Various lattices are investigated concerning this property, and its applications and usefullness are discussed. Eventually, we present a simplified model system describing the interplay of the well known Heisenberg interaction and the Dzyaloshinskii-Moriya (DM) interaction term acting on a sawtooth chain. The effect of the interplay between the two interaction couplings on the phase diagram is investigated. To do so, we employ modern techniques such as the density matrix renormalization group (DMRG) scheme. We find that for weak DM interaction the system exhibits valence bond order. However, a strong enough DM coupling destroys this order.

  2. Human Amygdala Represents the Complete Spectrum of Subjective Valence

    PubMed Central

    Jin, Jingwen; Zelano, Christina; Gottfried, Jay A.

    2015-01-01

    Although the amygdala is a major locus for hedonic processing, how it encodes valence information is poorly understood. Given the hedonic potency of odor stimuli and the amygdala's anatomical proximity to the peripheral olfactory system, we combined high-resolution fMRI with pattern-based multivariate techniques to examine how valence information is encoded in the amygdala. Ten human subjects underwent fMRI scanning while smelling 9 odorants that systematically varied in perceived valence. Representational similarity analyses showed that amygdala codes the entire dimension of valence, ranging from pleasantness to unpleasantness. This unidimensional representation significantly correlated with self-reported valence ratings but not with intensity ratings. Furthermore, within-trial valence representations evolved over time, prioritizing earlier differentiation of unpleasant stimuli. Together, these findings underscore the idea that both spatial and temporal features uniquely encode pleasant and unpleasant odor valence in the amygdala. The availability of a unidimensional valence code in the amygdala, distributed in both space and time, would create greater flexibility in determining the pleasantness or unpleasantness of stimuli, providing a mechanism by which expectation, context, attention, and learning could influence affective boundaries for guiding behavior. SIGNIFICANCE STATEMENT Our findings elucidate the mechanisms of affective processing in the amygdala by demonstrating that this brain region represents the entire valence dimension from pleasant to unpleasant. An important implication of this unidimensional valence code is that pleasant and unpleasant valence cannot coexist in the amygdale because overlap of fMRI ensemble patterns for these two valence extremes obscures their unique content. This functional architecture, whereby subjective valence maps onto a pattern continuum between pleasant and unpleasant poles, offers a robust mechanism by which context

  3. Photoswitchable stable charge-distributed states in a new cobalt complex exhibiting photo-induced valence tautomerism.

    PubMed

    Slota, Michael; Blankenhorn, Marian; Heintze, Eric; Vu, Minh; Hübner, Ralph; Bogani, Lapo

    2015-01-01

    We report the synthesis and magnetic and photomagnetic behaviour of a novel valence tautomeric cobalt complex, [Co(3,5-dbbq)2(μ-bpym)] (1) (3,5-dbbq = 3,5-di-tert-butyl-1,2-benzoquinone and μ-bpym = 2,2'-bipyrimidine). The synthesis is performed by reacting Co2(CO)8 and μ-bpym in the presence of the ligand 3,5-dbbq in a mixed solvent under inert atmosphere. The magnetic behavior clearly shows the presence of electron transfer from the catecholate ligand to the cobalt center, producing valence tautomers of [Co(II)(SQ)2] with a transition temperature (T1/2) of 215 K. Photomagnetic studies, performed via both SQUID magnetometry and X-band electron paramagnetic resonance, show the clear presence of photoinduced valence tautomerism, at temperatures considerably higher than previous systems. A metastable charge distribution is observed, strengthening previous investigations on the character of mixed valence ligands. Entropy-driven valence tautomeric interconversion is observed, and drives the transition to the most stable charge distribution. The complex has the ability to coordinate and can be used as a photoswitchable building block, with the photomagnetic characterisation evidencing a metastable state lifetime of the photo-induced valence tautomeric process of ca. 2.9 × 10(4) s below 20 K. The observed yields are higher than ones in similar systems, showing that tiny changes in the molecular structures may have a huge impact.

  4. Unusual valency and magnetic order in silver nickelates

    NASA Astrophysics Data System (ADS)

    Streltsov, Sergey; Johannes, M. D.; Mazin, I. I.; Khomskii, D. I.

    2007-03-01

    Ag2NiO2 forms as a triangular based layered nickelate, with a structure identical to the well-studied alkali nickelates LiNiO2 or NaNiO2, but with a double layer of Ag between the oxide planes. The metallic intercalant ions give rise to highly unusual valence state for silver: Ag^1/2+. We show that the reason for the underoxidation is that the two silver ions form extremely strong bonding-antibonding bands, pushing the lowest Ag-s derived band beneath the (filled) O p complex. This additionally preserves metallicity down to the lowest measured temperatures and gives rise to complex, competing magnetic interactions. The resulting spin fluctuations may explain the large discrepancy (too large for phonon renormalization) between calculated and measured linear specific heat coefficients. Our calculations do not support a controversial cooperative Jahn-Teller distortion, but a comparison with calculations and experiments for single-layer AgNiO2 suggests that magnetically driven charge disproportionation may instead explain the observed structural transition.

  5. Quantum Dot Detector Enhancement for Narrow Band Multispectral Applications

    DTIC Science & Technology

    2012-10-01

    in conduction band and the holes in valence band. The increase of electron-hole pairs is bonding to the variation of the physical parameters. By...analyzing the physical parameters through associated circuitry or systems, the characteristic of the incident photons can be identified. 15. SUBJECT... Properties of QDs.............................................................................................5 1.2.2 Advantage of QDIPs

  6. A single-source precursor approach to solution processed indium arsenide thin films† †Electronic supplementary information (ESI) available: Table listing selected bond lengths and angles for InAs precursor complex. Cross-sectional SEM of InAs thin film. XPS depth profile spectra of InAs thin film. Valence band XPS of InAs thin film and standard. CCDC 1477895. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c6tc02293f Click here for additional data file. Click here for additional data file.

    PubMed Central

    Marchand, Peter; Sathasivam, Sanjayan; Williamson, Benjamin A. D.; Pugh, David; Bawaked, Salem M.; Basahel, Sulaiman N.; Obaid, Abdullah Y.; Scanlon, David O.; Parkin, Ivan P.

    2016-01-01

    This paper reports the synthesis of the novel single-source precursor, [{(MeInAstBu)3}2(Me2InAs(tBu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10–3 Ω cm) and carrier mobility (410 cm2 V–1 s–1) values despite growth on amorphous glass substrates. PMID:27774150

  7. Interpretation of unusual absorption bandwidths and resonance Raman intensities in excited state mixed valence.

    PubMed

    Lockard, Jenny V; Valverde, Guadalupe; Neuhauser, Daniel; Zink, Jeffrey I; Luo, Yun; Weaver, Michael N; Nelsen, Stephen F

    2006-01-12

    Excited state mixed valence (ESMV) occurs in molecules in which the ground state has a symmetrical charge distribution but the excited state possesses two or more interchangeably equivalent sites that have different formal oxidation states. Although mixed valence excited states are relatively common in both organic and inorganic molecules, their properties have only recently been explored, primarily because their spectroscopic features are usually overlapped or obscured by other transitions in the molecule. The mixed valence excited state absorption bands of 2,3-di-p-anisyl-2,3-diazabicyclo[2.2.2]octane radical cation are well-separated from others in the absorption spectrum and are particularly well-suited for detailed analysis using the ESMV model. Excited state coupling splits the absorption band into two components. The lower energy component is broader and more intense than the higher energy component. The absorption bandwidths are caused by progressions in totally symmetric modes, and the difference in bandwidths is caused by the coordinate dependence of the excited state coupling. The Raman intensities obtained in resonance with the high and low energy components differ significantly from those expected based on the oscillator strengths of the bands. This unexpected observation is a result of the excited state coupling and is explained by both the averaging of the transition dipole moment orientation over all angles for the two types of spectroscopies and the coordinate-dependent coupling. The absorption spectrum is fit using a coupled two-state model in which both symmetric and asymmetric coordinates are included. The physical meaning of the observed resonance Raman intensity trends is discussed along with the origin of the coordinate-dependent coupling. The well-separated mixed valence excited state spectroscopic components enable detailed electronic and resonance Raman data to be obtained from which the model can be more fully developed and tested.

  8. Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques

    PubMed Central

    Limaye, Mukta V.; Chen, S. C.; Lee, C. Y.; Chen, L. Y.; Singh, Shashi B.; Shao, Y. C.; Wang, Y. F.; Hsieh, S. H.; Hsueh, H. C.; Chiou, J. W.; Chen, C. H.; Jang, L. Y.; Cheng, C. L.; Pong, W. F.; Hu, Y. F.

    2015-01-01

    The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2− (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2− species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2−, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples. PMID:26098075

  9. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

    NASA Astrophysics Data System (ADS)

    Volkov, N. V.; Tarasov, A. S.; Smolyakov, D. A.; Gustaitsev, A. O.; Rautskii, M. V.; Lukyanenko, A. V.; Volochaev, M. N.; Varnakov, S. N.; Yakovlev, I. A.; Ovchinnikov, S. G.

    2017-01-01

    We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.

  10. Disentangling the impacts of outcome valence and outcome frequency on the post-error slowing

    PubMed Central

    Wang, Lijun; Tang, Dandan; Zhao, Yuanfang; Hitchman, Glenn; Wu, Shanshan; Tan, Jinfeng; Chen, Antao

    2015-01-01

    Post-error slowing (PES) reflects efficient outcome monitoring, manifested as slower reaction time after errors. Cognitive control account assumes that PES depends on error information, whereas orienting account posits that it depends on error frequency. This raises the question how the outcome valence and outcome frequency separably influence the generation of PES. To address this issue, we varied the probability of observation errors (50/50 and 20/80, correct/error) the “partner” committed by employing an observation-execution task and investigated the corresponding behavioral and neural effects. On each trial, participants first viewed the outcome of a flanker-run that was supposedly performed by a ‘partner’, and then performed a flanker-run themselves afterwards. We observed PES in the two error rate conditions. However, electroencephalographic data suggested error-related potentials (oERN and oPe) and rhythmic oscillation associated with attentional process (alpha band) were respectively sensitive to outcome valence and outcome frequency. Importantly, oERN amplitude was positively correlated with PES. Taken together, these findings support the assumption of the cognitive control account, suggesting that outcome valence and outcome frequency are both involved in PES. Moreover, the generation of PES is indexed by oERN, whereas the modulation of PES size could be reflected on the alpha band. PMID:25732237

  11. The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

    SciTech Connect

    Dolgos, Michelle R.; Paraskos, Alexandra M.; Stoltzfus, Matthew W.; Yarnell, Samantha C.; Woodward, Patrick M.

    2009-07-15

    The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba{sub 3}(VO{sub 4}){sub 2}, Pb{sub 3}(VO{sub 4}){sub 2}, YVO{sub 4}, BiVO{sub 4}, CeVO{sub 4} and Ag{sub 3}VO{sub 4} were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba{sub 3}(VO{sub 4}){sub 2} and YVO{sub 4} have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb{sub 3}(VO{sub 4}){sub 2} and BiVO{sub 4} the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6s orbitals with nonbonding O 2p states at the top of the valence band, and (b) overlap of empty 6p orbitals with antibonding V 3d-O 2p states at the bottom of the conduction band. In Ag{sub 3}VO{sub 4} mixing between filled Ag 4d and O 2p states destabilizes states at the top of the valence band leading to a large decrease in the band gap (E{sub g}=2.2 eV). In CeVO{sub 4} excitations from partially filled 4f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce{sub 1-x}Bi{sub x}VO{sub 4} (0<=x<=0.5) and Ce{sub 1-x}Y{sub x}VO{sub 4} (x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi{sup 3+} or Y{sup 3+} are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4f orbitals. - Graphical abstract: The electronic structures of six vanadate salts, Ba{sub 3}(VO{sub 4}){sub 2}, Pb{sub 3}(VO{sub 4}){sub 2}, YVO{sub 4}, BiVO{sub 4}, Ag{sub 3}VO{sub 4} and CeVO{sub 4}, are studied. The results show that the oxygen to vanadium charge transfer, which is largely responsible for the

  12. Reactive Force Fields via Explicit Valency

    NASA Astrophysics Data System (ADS)

    Kale, Seyit

    Computational simulations are invaluable in elucidating the dynamics of biological macromolecules. Unfortunately, reactions present a fundamental challenge. Calculations based on quantum mechanics can predict bond formation and rupture; however they suffer from severe length- and time-limitations. At the other extreme, classical approaches provide orders of magnitude faster simulations; however they regard chemical bonds as immutable entities. A few exceptions exist, but these are not always trivial to adopt for routine use. We bridge this gap by providing a novel, pseudo-classical approach, based on explicit valency. We unpack molecules into valence electron pairs and atomic cores. Particles bear ionic charges and interact via pairwise-only potentials. The potentials are informed of quantum effects in the short-range and obey dissociation limits in the long-range. They are trained against a small set of isolated species, including geometries and thermodynamics of small hydrides and of dimers formed by them. The resulting force field captures the essentials of reactivity, polarizability and flexibility in a simple, seamless setting. We call this model LEWIS, after the chemical theory that inspired the use of valence pairs. Following the introduction in Chapter 1, we initially focus on the properties of water. Chapter 2 considers gas phase clusters. To transition to the liquid phase, Chapter 3 describes a novel pairwise long-range compensation that performs comparably to infinite lattice summations. The approach is suited to ionic solutions in general. In Chapters 4 and 5, LEWIS is shown to correctly predict the dipolar and quadrupolar response in bulk liquid, and can accommodate proton transfers in both acid and base. Efficiency permits the study of proton defects at dilutions not accessible to experiment or quantum mechanics. Chapter 6 discusses explicit valency approaches in other hydrides, forming the basis of a reactive organic force field. Examples of simple

  13. The variational subspace valence bond method.

    PubMed

    Fletcher, Graham D

    2015-04-07

    The variational subspace valence bond (VSVB) method based on overlapping orbitals is introduced. VSVB provides variational support against collapse for the optimization of overlapping linear combinations of atomic orbitals (OLCAOs) using modified orbital expansions, without recourse to orthogonalization. OLCAO have the advantage of being naturally localized, chemically intuitive (to individually model bonds and lone pairs, for example), and transferrable between different molecular systems. Such features are exploited to avoid key computational bottlenecks. Since the OLCAO can be doubly occupied, VSVB can access very large problems, and calculations on systems with several hundred atoms are presented.

  14. The variational subspace valence bond method

    SciTech Connect

    Fletcher, Graham D.

    2015-04-07

    The variational subspace valence bond (VSVB) method based on overlapping orbitals is introduced. VSVB provides variational support against collapse for the optimization of overlapping linear combinations of atomic orbitals (OLCAOs) using modified orbital expansions, without recourse to orthogonalization. OLCAO have the advantage of being naturally localized, chemically intuitive (to individually model bonds and lone pairs, for example), and transferrable between different molecular systems. Such features are exploited to avoid key computational bottlenecks. Since the OLCAO can be doubly occupied, VSVB can access very large problems, and calculations on systems with several hundred atoms are presented.

  15. Band Structures of Plasmonic Polarons

    NASA Astrophysics Data System (ADS)

    Caruso, Fabio; Lambert, Henry; Giustino, Feliciano

    2015-03-01

    In angle-resolved photoemission spectroscopy (ARPES), the acceleration of a photo-electron upon photon absorption may trigger shake-up excitations in the sample, leading to the emission of phonons, electron-hole pairs, and plasmons, the latter being collective charge-density fluctuations. Using state-of-the-art many-body calculations based on the `GW plus cumulant' approach, we show that electron-plasmon interactions induce plasmonic polaron bands in group IV transition metal dichalcogenide monolayers (MoS2, MoSe2, WS2, WSe2). We find that the energy vs. momentum dispersion relations of these plasmonic structures closely follow the standard valence bands, although they appear broadened and blueshifted by the plasmon energy. Based on our results we identify general criteria for observing plasmonic polaron bands in the angle-resolved photoelectron spectra of solids.

  16. Laser-excited luminescence and absorption study of mixed valence for K 2Pt(CN) 4—K 2Pt(CN) 6 crystals

    NASA Astrophysics Data System (ADS)

    Kasi Viswanath, A.; Smith, Wayne L.; Patterson, H.

    1982-04-01

    Crystals of K 2Pt(CN) 6 doped with Pt(CN) 2-4 show an absorption band at 337 nm which is assigned as a mixed-valence (MV) transition from Pt (II) to Pt(IV). From a Hush model analysis, the absorption band is interpreted to be class II in the Day—Robin scheme. When the MV band is laser excited at 337 nm, emmision is observed from Pt(CN) 2-4 clusters.

  17. Far-infrared investigation of band-structure parameters and exchange interaction in Pb1-xEuxTe films

    NASA Astrophysics Data System (ADS)

    Karczewski, G.; Furdyna, J. K.; Partin, D. L.; Thrush, C. N.; Heremans, J. P.

    1992-11-01

    Far-infrared (FIR) magnetotransmission has been investigated in molecular-beam-epitaxy-grown Pb1-xEuxTe films with Eu concentration x=0.02. The experiments were carried out at fixed FIR photon energies between 2.5 and 21.4 meV, in the temperature range 1.8<=T<=60 K, and in magnetic fields up to 6 T. From the magnetic-field dependence of the cyclotron-resonance energies the momentum matrix elements have been determined within the framework of the Mitchell-Wallis k.p model: 2P2t/m0=8.23+/-0.02 eV and 2P2l/m0=0.55+/-0.02 eV. The results signal a strong increase of band anisotropy due to the presence of Eu, from P2t/P2l=10.3 for pure PbTe to P2t/P2l=14.9 for Pb0.98Eu0.02Te. The low-field approximation of the model yields the following components of the effective-mass tensors: mvt/m0=0.023, mvl/m0=0.287, mct/m0=0.020, and mcl/m0=0.218. A resonant transition from shallow acceptor states to valence band has also been observed. The analysis of these transitions in finite magnetic fields provided the value of the valence-band g factor, gvt=15.9. This in turn served to place an upper limit on the valence-band exchange integral α, α=-7.5+/-5.5 meV. The small value of α indicates that the hole-Eu exchange interaction in the Pb1-xEuxTe system is at least one order of magnitude weaker than the hole-Mn interaction in Pb1-xMnxTe, and two orders of magnitude below exchange parameters in II1-xMnxVI systems.

  18. Effective band structure of random alloys.

    PubMed

    Popescu, Voicu; Zunger, Alex

    2010-06-11

    Random substitutional A(x)B(1-x) alloys lack formal translational symmetry and thus cannot be described by the language of band-structure dispersion E(k(→)). Yet, many alloy experiments are interpreted phenomenologically precisely by constructs derived from wave vector k(→), e.g., effective masses or van Hove singularities. Here we use large supercells with randomly distributed A and B atoms, whereby many different local environments are allowed to coexist, and transform the eigenstates into an effective band structure (EBS) in the primitive cell using a spectral decomposition. The resulting EBS reveals the extent to which band characteristics are preserved or lost at different compositions, band indices, and k(→) points, showing in (In,Ga)N the rapid disintegration of the valence band Bloch character and in Ga(N,P) the appearance of a pinned impurity band.

  19. KSi{sub 2}P{sub 3}: A new layered phosphidopolysilicate (IV)

    SciTech Connect

    Feng, Kai; Kang, Lei; Yin, Wenlong; Hao, Wenyu; Lin, Zheshuai; Yao, Jiyong; Wu, Yicheng

    2013-09-15

    A new ternary phosphidopolysilicate (IV), KSi{sub 2}P{sub 3}, has been synthesized by high temperature solid state reaction. The compound crystallizes in a new structure type in the monoclinic space group C2/c with a=10.1327(5) Å, b=10.1382(5) Å, c=21.1181(10) Å, β=96.88(0)°, and Z=8. In the structure, all SiP{sub 4} tetrahedra are connected with each other by corner-sharing P atoms to form {sup 2}{sub ∞}[Si{sub 2}P{sub 3}]{sup −} layers, which are stacked along c direction and separated by K{sup +} cations. The two-dimensional structure of KSi{sub 2}P{sub 3} contrasts with those of the two known members in the ternary A/Si/P (A=alkali metal) system, namely Na{sub 5}SiP{sub 3} (zero-dimensional) and K{sub 2}SiP{sub 2} (one-dimensional), which contains less amount of Si. The band gap deduced from UV–vis–IR diffuse reflectance spectrum is 1.72 eV. - Graphical abstract: KSi{sub 2}P{sub 3} contains two-dimensional layer {sup 2}{sub ∞}[Si{sub 2}P{sub 3}]{sup −} separated by K{sup +} cations. Display Omitted - Highlights: • A new ternary phosphidopolysilicate (IV), KSi{sub 2}P{sub 3}, has been synthesized. • The SiP{sub 4} tetrahedra are connected to form two-dimensional layer {sup 2}{sub ∞}[Si{sub 2}P{sub 3}]{sup −}. • The two-dimensional layers are separated by K{sup +} cations. • KSi{sub 2}P{sub 3} is a semiconductor with band gap of 1.72 eV.

  20. Valence-electron spectral change and charge transfer mechanism of CaSi 2 during CaSi 2H 2O reaction

    NASA Astrophysics Data System (ADS)

    Abe, S.; Nakayama, H.; Nishino, T.; Iida, S.

    1997-04-01

    The changes in the valence electron states of CaSi 2 during the chemical reaction with H 2O have been investigated by Auger valence electron spectroscopy (AVES). The drastic changes in the valence electron spectra of 3s and 3p states, which are caused by the oxidization of the Si atoms in CaSi 2, were observed in Si[2s, 2p, V] spectra for CaSi 2 after the reaction. In particular, the Si[2s, 2p, V] spectra of CaSi 2 samples reacted with H 2O at 60 or 80°C for 3 h were almost similar to that of SiO 2. The peak shift of Ca[2p, 3p, 3p] Auger transition toward the lower energy side has been observed, suggesting the formation of bonds between Ca 3p and O orbitals. New peaks due to CaO or CaOH bonds also appeared in the valence electron region of Ca[2p, 3p, V] Auger transition. The charge transfer and the chemical-bond formation can be well demonstrated by AVES during the CaSi 2H 2O reaction.

  1. Highly anisotropic but nodeless gap from a valence-fluctuation pairing mechanism

    SciTech Connect

    Brandow, B.H.

    1993-01-01

    We have refined and quantitatively explored a valence-fluctuation pairing mechanism, the finite-U mechanism introduced by Newns. This can provide an s-like (nodeless) gap. We use an Anderson-lattice Hamiltonian, with realistic parameter values derived from photoemission and BIS data. The Landau-Luttinger quasiparticle spectrum and the pairing interaction are obtained from a many-body variational formalism. Adequate pairing attraction is obtained, together with band narrowing (mass enhancement) and an extremely short coherence length, in reasonable agreement with experiment. These fully self-consistent results were obtained with an isotropic approximation to the band structure of a single CuO[sub 2] plane. Now, using a simplified treatment for a more realistic band structure, we find that the gap has strong in-plane anisotropy, although it should probably still remain nodeless. This conclusion is consistent with a variety of data.

  2. Band heterotopia.

    PubMed

    Alam, M S; Naila, N

    2010-01-01

    Band heterotopias are one of the rarest groups of congenital disorder that result in variable degree of structural abnormality of brain parenchyma. Band of heterotopic neurons result from a congenital or acquired deficiency of the neuronal migration. MRI is the examination of choice for demonstrating these abnormalities because of the superb gray vs. white matter differentiation, detail of cortical anatomy and ease of multiplanar imaging. We report a case of band heterotopia that showed a bilateral band of gray matter in deep white matter best demonstrated on T2 Wt. and FLAIR images.

  3. Valence photoelectron spectroscopy of Gd silicides

    SciTech Connect

    Braicovich, L. ); Puppin, E.; Lindau, I. ); Iandelli, A.; Olcese, G.L.; Palenzona, A. )

    1990-02-15

    Gd{sub 3}Si{sub 5}, GdSi, and Gd{sub 5}Si{sub 3} were investigated with photoemission spectroscopy in the photon-energy range 40.8--149 eV by exploiting the energy dependence of the photoemission cross sections and the valence resonance at the crossing of the Gd 4{ital d}-4{ital f} threshold. The modification of the spectra versus photon energy, along with their stoichiometry dependence, show the relevance of covalent mixed Gd 5{ital d}--Si 3{ital sp} states in the formation of the chemical bond. In the region close to the Fermi level an increase of the {ital d} contribution is observed. These points are discussed in connection with the existing models of the silicide bond.

  4. Seniority Number in Valence Bond Theory.

    PubMed

    Chen, Zhenhua; Zhou, Chen; Wu, Wei

    2015-09-08

    In this work, a hierarchy of valence bond (VB) methods based on the concept of seniority number, defined as the number of singly occupied orbitals in a determinant or an orbital configuration, is proposed and applied to the studies of the potential energy curves (PECs) of H8, N2, and C2 molecules. It is found that the seniority-based VB expansion converges more rapidly toward the full configuration interaction (FCI) or complete active space self-consistent field (CASSCF) limit and produces more accurate PECs with smaller nonparallelity errors than its molecular orbital (MO) theory-based analogue. Test results reveal that the nonorthogonal orbital-based VB theory provides a reverse but more efficient way to truncate the complete active Hilbert space by seniority numbers.

  5. Electronic Structure and Bonding in Co-Based Single and Mixed Valence Oxides: A Quantum Chemical Perspective.

    PubMed

    Singh, Vijay; Major, Dan Thomas

    2016-04-04

    The mixed valence cobalt oxide, Co3O4, is a potential candidate as a photovoltaic (PV) material, which also exhibits intriguing chemical and catalytic properties. Here, we present a comparative study of the electronic, magnetic, and chemical bonding properties of mixed valence Co3O4 (i.e., Co(2+/3+)) with the related single valence CoO (i.e., Co(2+)) and Co2O3 (i.e., Co(3+)) oxides using density functional theory (DFT). We have employed a range of theoretical methods, including pure DFT, DFT+U, and a range-separated exchange-correlation functional (HSE06). We compare the electronic structure and band gap of the oxide materials, with available photoemission spectroscopy and optical band gaps. Our calculations suggest that the bonding between Co(3+) and O(2-) ions in Co2O3 and Co3O4 and Co(2+) and O(2-) ions in CoO and Co3O4 are rather different. We find that Co2O3 and Co3O4 are weakly correlated materials, whereas CoO is a strongly correlated material. Furthermore, our computed one-electron energy level diagrams reveal that strong Co-O antibonding states are present at the top of the valence band for all the cobalt oxides, hinting at a defect tolerant capacity in these materials. These results, which give a detailed picture of the chemical bonding in related single and mixed valence cobalt oxides, may serve as a guide to enhance the PV or photoelectrochemical activity of Co3O4, by reducing its internal defect states or changing its electronic structure by doping or alloying with suitable elements.

  6. Relationship Between Iron Valence States of Serpentine in CM Chondrites and Their Aqueous Alteration Degrees

    NASA Technical Reports Server (NTRS)

    Mikouchi, T.; Zolensky, M.; Satake, W.; Le, L.

    2012-01-01

    The 0.6-0.7 micron absorption band observed for C-type asteroids is caused by the presence of Fe(3+) in phyllosilicates . Because Fe-bearing phyllosilicates, especially serpentine, are the most dominant product of aqueous alteration in the most abundant carbonaceous chondrites, CM chondrites, it is important to understand the crystal chemistry of serpentine in CM chondrites to better understand spectral features of C-type asteroids. CM chondrites show variable degrees of aqueous alteration, which should be related to iron valences in serpentine. It is predicted that the Fe(3+)/Sum of (Fe) ratios of serpentine in CM chondrites decrease as alteration proceeds by Si and Fe(3+) substitutions from end-member cronstedtite to serpentine, which should be apparent in the absorption intensity of the 0.6-0.7 micron band from C-type asteroids. In fact, the JAXA Hayabusa 2 target (C-type asteroid: 1993 JU3) exhibits heterogeneous spectral features (0.7 micron absorption band disappears by rotation). From these points of view, we have analyzed iron valences of matrix serpentine in several CM chondrites which span the entire observed range of aqueous alteration using Synchrotron Radiation X-ray Absorption Near-Edge Structure (SR-XANES). In this abstract we discuss the relationship between obtained Fe(3+)/Sum of (Fe) ratios and alteration degrees by adding new data to our previous studies

  7. Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions

    SciTech Connect

    Devi, Vanita; Kumar, Ravindra; Joshi, B. C.; Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2015-06-14

    The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.

  8. Valency, Secondary Frequency, and Lexical Access: A Japanese Study.

    ERIC Educational Resources Information Center

    Yamada, Jun; Kayamoto, Yuriko

    1998-01-01

    A study examined the effects of valency (associative value representing the number of two-kanji words containing the first-positional kanji of the word) on recognition of two-kanji words in Japanese. Frequency and valency of the first constituent kanji were significant factors for word recognition, and frequency of the first constituent kanji was…

  9. Teaching Valence Shell Electron Pair Repulsion (VSEPR) Theory

    ERIC Educational Resources Information Center

    Talbot, Christopher; Neo, Choo Tong

    2013-01-01

    This "Science Note" looks at the way that the shapes of simple molecules can be explained in terms of the number of electron pairs in the valence shell of the central atom. This theory is formally known as valence shell electron pair repulsion (VSEPR) theory. The article explains the preferred shape of chlorine trifluoride (ClF3),…

  10. Valence bond distribution and correlation in bipartite Heisenberg antiferromagnets

    NASA Astrophysics Data System (ADS)

    Schwandt, David; Alet, Fabien; Oshikawa, Masaki

    2014-03-01

    Every singlet state of a quantum spin-1/2 system can be decomposed into a linear combination of valence bond basis states. The range of valence bonds within this linear combination as well as the correlations between them can reveal the nature of the singlet state and are key ingredients in variational calculations. In this work, we study the bipartite valence bond distributions and their correlations within the ground state of the Heisenberg antiferromagnet on bipartite lattices. In terms of field theory, this problem can be mapped to correlation functions near a boundary. In dimension d ≥2, a nonlinear σ model analysis reveals that at long distances the probability distribution P (r) of valence bond lengths decays as |r|-d-1 and that valence bonds are uncorrelated. By a bosonization analysis, we also obtain P(r )∝|r|-d-1 in d =1 despite the different mechanism. On the other hand, we find that correlations between valence bonds are important even at large distances in d =1, in stark contrast to d ≥2. The analytical results are confirmed by high-precision quantum Monte Carlo simulations in d =1, 2, and 3. We develop a single-projection loop variant of the valence bond projection algorithm, which is well designed to compute valence bond probabilities and for which we provide algorithmic details.

  11. Energies and E1, M1, E2, and M2 transition rates for states of the 2s{sup 2}2p{sup 3}, 2s2p{sup 4}, and 2p{sup 5} configurations in nitrogen-like ions between F III and Kr XXX

    SciTech Connect

    Rynkun, P.; Jönsson, P.; Gaigalas, G.; Froese Fischer, C.

    2014-03-15

    Based on relativistic wavefunctions from multiconfiguration Dirac–Hartree–Fock and configuration interaction calculations, E1, M1, E2, and M2 transition rates, weighted oscillator strengths, and lifetimes are evaluated for the states of the (1s{sup 2})2s{sup 2}2p{sup 3},2s2p{sup 4}, and 2p{sup 5} configurations in all nitrogen-like ions between F III and Kr XXX. The wavefunction expansions include valence, core–valence, and core–core correlation effects through single–double multireference expansions to increasing sets of active orbitals. The computed energies agree very well with experimental values, with differences of only 300–600 cm{sup −1} for the majority of the levels and ions in the sequence. Computed transitions rates are in close agreement with available data from MCHF-BP calculations by Tachiev and Froese Fischer [G.I. Tachiev, C. Froese Fischer, A and A 385 (2002) 716].

  12. Resonant-photoemission identification of the valence states of NiPS 3

    NASA Astrophysics Data System (ADS)

    Kelly, M. K.; Daniels, R. R.; Margaritondo, G.; Lévy, F.

    1984-04-01

    We monitored the resonant behavior of the Ni d satellite peaks in the valence band photoemission spectra of NiPS 3 at photon energies immediately below and immediately above the Ni3p threshold. The observed resonance gives an unequivocal identification of the satellite peaks and of the corresponding main Ni d features. The study of the electronic structure of this material and of the related compounds FePS 3 and HgPS 3 was extended to unoccupied states by means of partial-yield synchrotron-radiation photoemission spectroscopy.

  13. Anomalous Eu valence state and superconductivity in undoped Eu3Bi2S4F4.

    PubMed

    Zhai, Hui-Fei; Zhang, Pan; Wu, Si-Qi; He, Chao-Yang; Tang, Zhang-Tu; Jiang, Hao; Sun, Yun-Lei; Bao, Jin-Ke; Nowik, Israel; Felner, Israel; Zeng, Yue-Wu; Li, Yu-Ke; Xu, Xiao-Feng; Tao, Qian; Xu, Zhu-An; Cao, Guang-Han

    2014-10-29

    We have synthesized a novel europium bismuth sulfofluoride, Eu3Bi2S4F4, by solid-state reactions in sealed evacuated quartz ampules. The compound crystallizes in a tetragonal lattice (space group I4/mmm, a = 4.0771(1) Å, c = 32.4330(6) Å, and Z = 2), in which CaF2-type Eu3F4 layers and NaCl-like BiS2 bilayers stack alternately along the crystallographic c axis. There are two crystallographically distinct Eu sites, Eu(1) and Eu(2) at the Wyckoff positions 4e and 2a, respectively. Our bond valence sum calculation, based on the refined structural data, indicates that Eu(1) is essentially divalent, while Eu(2) has an average valence of ∼ +2.64(5). This anomalous Eu valence state is further confirmed and supported, respectively, by Mössbauer and magnetization measurements. The Eu(3+) components donate electrons into the conduction bands that are mainly composed of Bi 6px and 6py states. Consequently, the material itself shows metallic conduction and superconducts at 1.5 K without extrinsic chemical doping.

  14. Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy

    SciTech Connect

    Sun, R. J.; Jiang, Q. J.; Yan, W. C.; Feng, L. S.; Lu, B.; Ye, Z. Z.; Li, X. F.; Li, X. D.; Lu, J. G.

    2014-09-28

    X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (ΔE{sub V}) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p{sub 3/2} and Sn 3d{sub 5/2} energy levels as references, the value of ΔE{sub V} was calculated to be 2.69 ± 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (ΔE{sub C}) was deduced to be 0.17 ± 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices.

  15. Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications

    NASA Astrophysics Data System (ADS)

    Singh, S. D.; Nand, Mangla; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Sinha, A. K.; Jha, S. N.; Ganguli, Tapas

    2016-12-01

    Valence band offset of 2.3 ± 0.4 eV at strained NiO/MgO heterojunction is determined from photoelectron spectroscopy (PES) measurements. The determined value of valence band offset is larger than that is predicted from first principle calculations, but is in corroboration with that obtained from band transitivity rule. Our PES result indicates a larger value of the valence band offset at strained NiO/MgO heterojunction and can be used to predict accurately carrier transport and electroluminescence mechanisms for n-ZnO/MgO/p-NiO and p-NiO/MgO/n-GaN heterojunction light emitting diodes.

  16. Providing VoD Streaming Using P2P Networks

    NASA Astrophysics Data System (ADS)

    Pedro Muñoz-Gea, Juan; Malgosa-Sanahuja, Josemaria; Manzanares-Lopez, Pilar; Carlos Sanchez-Aarnoutse, Juan

    Overlays and P2P systems, initially developed to support IP multicast and file-sharing, have moved beyond that functionality. They are also proving to be key technologies for the delivery of video streaming. Recently, there have been a number of successful deployments for "live" P2P streaming. However, the question remains open whether similar P2P technologies can be used to provide VoD (Video-On-Demand) services. A P2P VoD service is more challenging to design than a P2P live streaming system because the system should allow users arriving at arbitrary times to watch (arbitrary parts of) the video.

  17. Kinetics of an oxygen - iodine active medium with iodine atoms optically pumped on the 2P1/2 - 2P3/2 transition

    NASA Astrophysics Data System (ADS)

    Zagidullin, M. V.; Malyshev, M. S.; Azyazov, V. N.

    2015-08-01

    The kinetics of the processes occurring in an O2 - I2 - He - H2O gas flow in which photodissociation of molecular iodine at a wavelength close to 500 nm and excitation of atomic iodine on the 2P1/2 - 2P3/2 transition by narrow-band radiation near 1315 nm are implemented successively has been analysed. It is shown that implementation of these processes allows one to form an oxygen - iodine medium with a high degree of dissociation of molecular iodine and a relative content of singlet oxygen O2(a1Δ) exceeding 10%. Having formed a supersonic gas flow with a temperature ~100 K from this medium, one can reach a small-signal gain of about 10-2 cm-1 on the 2P1/2 - 2P3/2 transition in iodine atoms. The specific power per unit flow cross section in the oxygen - iodine laser with this active medium may reach ~100 W cm-2.

  18. Prospective memory, emotional valence and ageing.

    PubMed

    Rendell, Peter G; Phillips, Louise H; Henry, Julie D; Brumby-Rendell, Tristan; de la Piedad Garcia, Xochitl; Altgassen, Mareike; Kliegel, Matthias

    2011-08-01

    Emotional factors have been found to be an important influence on memory. The current study investigated the influence of emotional salience and age on a laboratory measure of prospective memory (PM); Virtual Week. Thirty young and 30 old adults completed Virtual Week, in which the emotional salience of the tasks at encoding was manipulated to be positive, negative or neutral in content. For event-based, but not time-based tasks, positivity enhancement in both age groups was seen, with a greater number of positive PM tasks being performed relative to neutral tasks. There was no negativity enhancement effect. Older adults showed generally poorer levels of PM, but they also demonstrated greater beneficial effects of positive valence compared to young. These effects of emotion on PM accuracy do not appear to reflect the retrospective component of the task as a different pattern of emotion effects was seen on the recall of PM content. Results indicate that older adults' difficulties in prospective remembering can be reduced where the tasks to be remembered are positive.

  19. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques

    NASA Astrophysics Data System (ADS)

    Singh, S. D.; Nand, Mangla; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Shukla, D. K.; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Jha, S. N.; Phase, D. M.; Ganguli, Tapas

    2016-04-01

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al2O3 heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al2O3 substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al2O3 substrate. Surface related feature in Ni 2p3/2 core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al2O3 substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al2O3 layers. A type-I band alignment at NiO and Al2O3 heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  20. Mulliken-Hush analysis of a bis(triarylamine) mixed-valence system with a N...N distance of 28.7 A.

    PubMed

    Heckmann, Alexander; Amthor, Stephan; Lambert, Christoph

    2006-07-28

    An organic mixed valence compound with a spacer length of 25 unsaturated bonds separating two amine redox centres was synthesised and the electron transfer behaviour was investigated in the context of a Mulliken-Hush analysis in order to estimate the longest redox centre separation for which an intervalence charge transfer band can be observed.

  1. Pre-stimulus alpha power affects vertex N2-P2 potentials evoked by noxious stimuli.

    PubMed

    Babiloni, Claudio; Del Percio, Claudio; Brancucci, Alfredo; Capotosto, Paolo; Le Pera, Domenica; Marzano, Nicola; Valeriani, Massimiliano; Romani, Gian Luca; Arendt-Nielsen, Lars; Rossini, Paolo Maria

    2008-03-28

    It is well known that scalp potentials evoked by nonpainful visual and auditory stimuli are enhanced in amplitude when preceded by pre-stimulus low-amplitude alpha rhythms. This study tested the hypothesis that the same holds for the amplitude of vertex N2-P2 potentials evoked by brief noxious laser stimuli, an issue of interest for clinical perspective. EEG data were recorded in 10 subjects from 30 electrodes during laser noxious stimulation. The artifact-free vertex N2-P2 complex was spatially enhanced by surface Laplacian transformation. Pre-stimulus alpha power was computed at three alpha sub-bands according to subject's individual alpha frequency peak (i.e. about 6-8Hz for alpha 1, 8-10Hz for alpha 2 and 10-12Hz for alpha 3 sub-band). Individual EEG single trials were divided in two sub-groups. The strong-alpha sub-group (high band power) included halfway of all EEG single trials, namely those having the highest pre-stimulus alpha power. Weak-alpha sub-group (low band power) included the remaining trials. Averaging procedure provided laser evoked potentials for both trial sub-groups. No significant effect was found for alpha 1 and alpha 2 sub-bands. Conversely, compared to strong-alpha 3 sub-group, weak-alpha 3 sub-group showed vertex N2-P2 potentials having significantly higher amplitude (p<0.05). These results extend to the later phases of pain processing systems the notion that generation mechanisms of pre-stimulus alpha rhythms and (laser) evoked potentials are intrinsically related and subjected to fluctuating "noise". That "noise" could explain the trial-by-trial variability of laser evoked potentials and perception.

  2. Valence bond and von Neumann entanglement entropy in Heisenberg ladders.

    PubMed

    Kallin, Ann B; González, Iván; Hastings, Matthew B; Melko, Roger G

    2009-09-11

    We present a direct comparison of the recently proposed valence bond entanglement entropy and the von Neumann entanglement entropy on spin-1/2 Heisenberg systems using quantum Monte Carlo and density-matrix renormalization group simulations. For one-dimensional chains we show that the valence bond entropy can be either less or greater than the von Neumann entropy; hence, it cannot provide a bound on the latter. On ladder geometries, simulations with up to seven legs are sufficient to indicate that the von Neumann entropy in two dimensions obeys an area law, even though the valence bond entanglement entropy has a multiplicative logarithmic correction.

  3. A Scalable P2P Video Streaming Framework

    NASA Astrophysics Data System (ADS)

    Lee, Ivan

    Peer-to-peer (P2P) networking technique represents a vast potential to overcome many constraints in the conventional content distribution networks, especially for the real-time applications such as P2P streaming. In this chapter, a P2P streaming system is examined, and the proposed system combines multiple-description source coding technique and a scalable streaming infrastructure. The proposed system aims to gradually offload congested traffic from a centralized bottleneck to the under-utilized P2P networks and hence, provides seamless transitions from client/server streaming to centralized P2P streaming and to decentralized P2P streaming. The performance of the proposed framework is evaluated in terms of video frame loss rate, which reflects the probability of freeze video frames.

  4. Quantitative first-principles calculations of valence and core excitation spectra of solid C60

    NASA Astrophysics Data System (ADS)

    Fossard, F.; Hug, G.; Gilmore, K.; Kas, J. J.; Rehr, J. J.; Vila, F. D.; Shirley, E. L.

    2017-03-01

    We present calculated valence and C 1 s near-edge excitation spectra of solid C60 and experimental results measured with high-resolution electron energy-loss spectroscopy. The near-edge calculations are carried out using three different methods: solution of the Bethe-Salpeter equation (BSE) as implemented in the ocean suite (Obtaining Core Excitations with Ab Initio methods and the NIST BSE solver), the excited-electron core-hole approach, and the constrained-occupancy method using the Stockholm-Berlin core excitation code, StoBe. The three methods give similar results and are in good agreement with experiment, though the BSE results are the most accurate. The BSE formalism is also used to carry out valence level calculations using the NIST BSE solver. Theoretical results include self-energy corrections to the band gap and bandwidths, lifetime-damping effects, and Debye-Waller effects in the core excitation case. A comparison of spectral features to those observed experimentally illustrates the sensitivity of certain features to computational details, such as self-energy corrections to the band structure and core-hole screening.

  5. Supporting Collaboration and Creativity Through Mobile P2P Computing

    NASA Astrophysics Data System (ADS)

    Wierzbicki, Adam; Datta, Anwitaman; Żaczek, Łukasz; Rzadca, Krzysztof

    Among many potential applications of mobile P2P systems, collaboration applications are among the most prominent. Examples of applications such as Groove (although not intended for mobile networks), collaboration tools for disaster recovery (the WORKPAD project), and Skype's collaboration extensions, all demonstrate the potential of P2P collaborative applications. Yet, the development of such applications for mobile P2P systems is still difficult because of the lack of middleware.

  6. How emotional arousal and valence influence access to awareness.

    PubMed

    Sheth, Bhavin R; Pham, Thuan

    2008-10-01

    The effect of emotion on visual awareness is largely unknown. Pairs of natural images were presented side by side on a screen in a binocular rivalry setup. The amount of time that each image of a pair dominated perception was computed. Our results showed: (A) A main effect of arousal: Dominance durations of the more arousing picture of iso-valence pairs were longer. (B) No effect of valence: Dominance durations of pleasant and unpleasant pictures of iso-arousal pairs were similar. (C) An interaction between arousal and valence: The more pleasant picture of iso-arousal pairs of low arousal level dominated conscious perception. The less pleasant picture of iso-arousal pairs of high arousal level dominated conscious perception. Our findings suggest that the emotional content of a stimulus affects the extent to which it dominates awareness. While arousal and valence interactively affect access to awareness, only arousal exerts an independent control of such access.

  7. A Valence Isomer Trapping Procedure for Introductory Organic Laboratory.

    ERIC Educational Resources Information Center

    Kurtz, David W.; Johnson, Richard P.

    1989-01-01

    Described is an experiment which illustrates valence isomerization, the trapping of a reactive intermediate and retrosynthetic analysis applied to the Diels-Alder reaction. Included is a background discussion, experimental procedures, and a discussion of the analysis. (CW)

  8. Sizable band gap in organometallic topological insulator

    NASA Astrophysics Data System (ADS)

    Derakhshan, V.; Ketabi, S. A.

    2017-01-01

    Based on first principle calculation when Ceperley-Alder and Perdew-Burke-Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin-orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin-orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.

  9. Fe dopant in ZnO: 2+ versus 3+ valency and ion-carrier s ,p -d exchange interaction

    NASA Astrophysics Data System (ADS)

    Papierska, J.; Ciechan, A.; Bogusławski, P.; Boshta, M.; Gomaa, M. M.; Chikoidze, E.; Dumont, Y.; Drabińska, A.; Przybylińska, H.; Gardias, A.; Szczytko, J.; Twardowski, A.; Tokarczyk, M.; Kowalski, G.; Witkowski, B.; Sawicki, K.; Pacuski, W.; Nawrocki, M.; Suffczyński, J.

    2016-12-01

    Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U ) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2 + in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2 + to Fe3 + by nonintentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism, and magnetophotoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%. We find a predicted increase of n -type conductivity upon the Fe doping with the Fe donor ionization energy of 0.25 ±0.02 eV consistent with the results of theoretical considerations. Moreover, our magneto-optical measurements confirm the calculated nonvanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3 + ions in the ZnO, being so far an unsettled issue.

  10. Inelastic collisions of positrons with one-valence-electron targets

    NASA Technical Reports Server (NTRS)

    Abdel-Raouf, Mohamed Assad

    1990-01-01

    The total elastic and positronium formation cross sections of the inelastic collisions between positrons and various one-valence-electron atoms, (namely hydrogen, lithium, sodium, potassium and rubidium), and one-valence-electron ions, (namely hydrogen-like, lithium-like and alkaline-earth positive ions) are determined using an elaborate modified coupled-static approximation. Special attention is devoted to the behavior of the Ps cross sections at the energy regions lying above the Ps formation thresholds.

  11. Valence-state Model of Strain-dependent Mn L2,3 X-ray Magnetic Circular Dichroism from Ferromagnetic Semiconductors

    SciTech Connect

    van der Laan, G.; Edmonds, K. W.; Arenholz, E.; Farley, N. R. S.; Gallagher, B. L.

    2010-03-30

    We present a valence-state model to explain the characteristics of a recently observed pre-edge feature in Mn L{sub 3} x-ray magnetic circular dichroism (XMCD) of ferromagnetic (Ga,Mn)As and (Al,Ga,Mn)As thin films. The prepeak XMCD shows a uniaxial anisotropy, contrary to the cubic symmetry of the main structures induced by the crystalline electric field. Reversing the strain in the host lattice reverses the sign of the uniaxial anisotropy. With increasing carrier localization, the prepeak height increases, indicating an increasing 3d character of the hybridized holes. Hence, the feature is ascribed to transitions from the Mn 2p core level to unoccupied p-d hybridized valence states. The characteristics of the prepeak are readily reproduced by the model calculation taking into account the symmetry of the strain-, spin-orbit-, and exchange-split valence states around the zone center.

  12. Emotional valence and the free-energy principle.

    PubMed

    Joffily, Mateus; Coricelli, Giorgio

    2013-01-01

    The free-energy principle has recently been proposed as a unified Bayesian account of perception, learning and action. Despite the inextricable link between emotion and cognition, emotion has not yet been formulated under this framework. A core concept that permeates many perspectives on emotion is valence, which broadly refers to the positive and negative character of emotion or some of its aspects. In the present paper, we propose a definition of emotional valence in terms of the negative rate of change of free-energy over time. If the second time-derivative of free-energy is taken into account, the dynamics of basic forms of emotion such as happiness, unhappiness, hope, fear, disappointment and relief can be explained. In this formulation, an important function of emotional valence turns out to regulate the learning rate of the causes of sensory inputs. When sensations increasingly violate the agent's expectations, valence is negative and increases the learning rate. Conversely, when sensations increasingly fulfil the agent's expectations, valence is positive and decreases the learning rate. This dynamic interaction between emotional valence and learning rate highlights the crucial role played by emotions in biological agents' adaptation to unexpected changes in their world.

  13. Electronic structure and thermoelectric properties of half-Heusler compounds with eight electron valence count—KScX (X = C and Ge)

    NASA Astrophysics Data System (ADS)

    Ciftci, Yasemin O.; Mahanti, Subhendra D.

    2016-04-01

    Electronic band structure and structural properties of two representative half-Heusler (HH) compounds with 8 electron valence count (VC), KScC and KScGe, have been studied using first principles methods within density functional theory and generalized gradient approximation. These systems differ from the well studied class of HH compounds like ZrNiSn and ZrCoSb which have VC = 18 because of the absence of d electrons of the transition metal atoms Ni and Co. Electronic transport properties such as Seebeck coefficient (S), electrical conductivity (σ), electronic thermal conductivity (κe) (the latter two scaled by electronic relaxation time), and the power factor (S2σ) have been calculated using semi-classical Boltzmann transport theory within constant relaxation time approximation. Both the compounds are direct band gap semiconductors with band extrema at the X point. Their electronic structures show a mixture of heavy and light bands near the valance band maximum and highly anisotropic conduction and valence bands near the band extrema, desirable features of good thermoelectric. Optimal p- or n-type doping concentrations have been estimated based on thermopower and maximum power factors. The optimum room temperature values of S are ˜1.5 times larger than that of the best room temperature thermoelectric Bi2Te3. We also discuss the impact of the band structure on deviations from Weidemann-Franz law as one tunes the chemical potential across the band gap.

  14. A Remedy for Network Operators against Increasing P2P Traffic: Enabling Packet Cache for P2P Applications

    NASA Astrophysics Data System (ADS)

    Nakao, Akihiro; Sasaki, Kengo; Yamamoto, Shu

    We observe that P2P traffic has peculiar characteristics as opposed to the other type of traffic such as web browsing and file transfer. Since they exploit swarm effect — a multitude of end points downloading the same content piece by piece nearly at the same time, thus, increasing the effectiveness of caching — the same pieces of data end up traversing the network over and over again within mostly a short time window. In the light of this observation, we propose a network layer packet-level caching for reducing the volume of emerging P2P traffic, transparently to the P2P applications — without affecting operations of the P2P applications at all — rather than banning it, restricting it, or modifying P2P systems themselves. Unlike the other caching techniques, we aim to provide as generic a caching mechanism as possible at network layer — without knowing much detail of P2P application protocols — to extend applicability to arbitrary P2P protocols. Our preliminary evaluation shows that our approach is expected to reduce a significant amount of P2P traffic transparently to P2P applications.

  15. Isotope shifts of the 2 p3 /2-2 p1 /2 transition in B-like ions

    NASA Astrophysics Data System (ADS)

    Zubova, N. A.; Malyshev, A. V.; Tupitsyn, I. I.; Shabaev, V. M.; Kozhedub, Y. S.; Plunien, G.; Brandau, C.; Stöhlker, Th.

    2016-05-01

    Isotope shifts of the 2 p3 /2-2 p1 /2 transition in B-like ions are evaluated for a wide range of the nuclear charge number: Z =8 -92 . The calculations of the relativistic nuclear recoil and nuclear size effects are performed using a large-scale configuration-interaction Dirac-Fock-Sturm method. The corresponding QED corrections are also taken into account. The results of the calculations are compared with the theoretical values obtained with other methods. The accuracy of the isotope shifts of the 2 p3 /2-2 p1 /2 transition in B-like ions is significantly improved.

  16. Energies and E1, M1, E2, and M2 transition rates for states of the 2s22p3, 2s2p4, and 2p5 configurations in nitrogen-like ions between F III and Kr XXX

    NASA Astrophysics Data System (ADS)

    Rynkun, P.; Jönsson, P.; Gaigalas, G.; Froese Fischer, C.

    2014-03-01

    Based on relativistic wavefunctions from multiconfiguration Dirac-Hartree-Fock and configuration interaction calculations, E1, M1, E2, and M2 transition rates, weighted oscillator strengths, and lifetimes are evaluated for the states of the (1s2)2s22p3,2s2p4, and 2p5 configurations in all nitrogen-like ions between F III and Kr XXX. The wavefunction expansions include valence, core-valence, and core-core correlation effects through single-double multireference expansions to increasing sets of active orbitals. The computed energies agree very well with experimental values, with differences of only 300-600 cm-1 for the majority of the levels and ions in the sequence. Computed transitions rates are in close agreement with available data from MCHF-BP calculations by Tachiev and Froese Fischer [G.I. Tachiev, C. Froese Fischer, A&A 385 (2002) 716].

  17. Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Bel'kov, V. V.; Ganichev, S. D.; Schneider, Petra; Back, C.; Oestreich, M.; Rudolph, J.; Hägele, D.; Golub, L. E.; Wegscheider, W.; Prettl, W.

    2003-11-01

    We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

  18. Character Disposition and Behavior Type: Influences of Valence on Preschool Children's Social Judgments

    ERIC Educational Resources Information Center

    Jones, Elaine F.; Tobias, Marvin; Pauley, Danielle; Thomson, Nicole Renick; Johnson, Shawana Lewis

    2009-01-01

    The authors studied the influences of valence information on preschool children's (n = 47) moral (good or bad), liking (liked or disliked by a friend), and consequence-of-behavior (reward or punishment) judgments. The authors presented 8 scenarios describing the behavior valence, positive valence (help, share), negative valence (verbal insult,…

  19. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

    SciTech Connect

    Jing, Qiang; Wu, Guoguang; Zhang, Yuantao; Gao, Fubin; Cai, Xupu; Zhao, Yang; Li, Wancheng Du, Guotong

    2014-08-11

    The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.

  20. Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution

    SciTech Connect

    Majumdar, Kausik

    2014-05-07

    In this paper, we use a tight binding Hamiltonian with spin orbit coupling to study the real and complex band structures of relaxed and strained GaAs. A simple d orbital on-site energy shift coupled with appropriate scaling of the off-diagonal terms is found to correctly reproduce the band-edge shifts with strain. Four different 〈100〉 strain combinations, namely, uniaxial compressive, uniaxial tensile, biaxial compressive, and biaxial tensile strain are studied, revealing rich valence band structure and strong relative orientation dependent tunneling. It is found that complex bands are unable to provide unambiguous tunneling paths away from the Brillouin zone center. Tunneling current density distribution over the Brillouin zone is computed using non-equilibrium Green's function approach elucidating a physical picture of band to band tunneling.

  1. Rare Earth 4f Hybridization with the GaN Valence Band

    DTIC Science & Technology

    2012-01-01

    DOS of Ga17GdN18. and Auger-like electrons emitted in a super Coster– Kronig process [52] 4d104fN + hν → [4d94fN+1]∗ → 4d104fN−1 + e−, (2) where...similar, albeit not identical, response for GaN:Er compared to GaN:Gd at the photon energy characteristic for the Er 4d → 4f super Coster– Kronig resonance

  2. Laparoscopic gastric banding

    MedlinePlus

    ... adjustable gastric banding; Bariatric surgery - laparoscopic gastric banding; Obesity - gastric banding; Weight loss - gastric banding ... gastric banding is not a "quick fix" for obesity. It will greatly change your lifestyle. You must ...

  3. Effects of valence and divided attention on cognitive reappraisal processes.

    PubMed

    Morris, John A; Leclerc, Christina M; Kensinger, Elizabeth A

    2014-12-01

    Numerous studies have investigated the neural substrates supporting cognitive reappraisal, identifying the importance of cognitive control processes implemented by prefrontal cortex (PFC). This study examined how valence and attention affect the processes used for cognitive reappraisal by asking participants to passively view or to cognitively reappraise positive and negative images with full or divided attention. When participants simply viewed these images, results revealed few effects of valence or attention. However, when participants engaged in reappraisal, there was a robust effect of valence, with the reappraisal of negative relative to positive images associated with more widespread activation, including within regions of medial and lateral PFC. There also was an effect of attention, with more lateral PFC recruitment when regulating with full attention and more medial PFC recruitment when regulating with divided attention. Within two regions of medial PFC and one region of ventrolateral PFC, there was an interaction between valence and attention: in these regions, divided attention reduced activity during reappraisal of positive but not negative images. Critically, participants continued to report reappraisal success even during the Divided Attention condition. These results suggest multiple routes to successful cognitive reappraisal, depending upon image valence and the availability of attentional resources.

  4. The acoustic correlates of valence depend on emotion family.

    PubMed

    Belyk, Michel; Brown, Steven

    2014-07-01

    The voice expresses a wide range of emotions through modulations of acoustic parameters such as frequency and amplitude. Although the acoustics of individual emotions are well understood, attempts to describe the acoustic correlates of broad emotional categories such as valence have yielded mixed results. In the present study, we analyzed the acoustics of emotional valence for different families of emotion. We divided emotional vocalizations into "motivational," "moral," and "aesthetic" families as defined by the OCC (Ortony, Clore, and Collins) model of emotion. Subjects viewed emotional scenarios and were cued to vocalize congruent exclamations in response to them, for example, "Yay!" and "Damn!". Positive valence was weakly associated with high-pitched and loud vocalizations. However, valence interacted with emotion family for both pitch and amplitude. A general acoustic code for valence does not hold across families of emotion, whereas family-specific codes provide a more accurate description of vocal emotions. These findings are consolidated into a set of "rules of expression" relating vocal dimensions to emotion dimensions.

  5. Trisomy 2p: Analysis of unusual phenotypic findings

    SciTech Connect

    Lurie, I.W.; Ilyina, H.G.; Gurevich, D.B.

    1995-01-16

    We present three probands with partial trisomies 2p21-23 due to ins(4;2)(q21;p21p23) pat, 2p23-pter due to t(2;4)(p23;q35)mat, and 2p21-pter due to t(2;11)(p21;q23.3)mat. More than 50 cases of partial trisomy 2p have been reviewed and some abnormalities, unusual for most other types of structural autosomal imbalance, have been found in patients with inherited forms of 2p trisomy and in their non-karyotyped sibs. Neural tube defects (anencephaly, occipital encephalocele, and spina bifida) were found in five probands and 4/6 affected non-karyotyped sibs. The only triplicated segment common to all was 2p24. Different forms of {open_quotes}broncho-pulmonary a/hypoplasia{close_quotes} (including two cases of lung agenesis) were described in four patients (overlapping triplicated segment was 2p21-p25). Three patients (with overlapping triplicated segment 2p23-p25) had diaphragmatic hernia. Abnormal rotation of the heart or L-transposition of large vessels (with or without visceral heterotaxia) was found in two infants (overlapping triplicated segment 2p23-p24). In two patients with common triplicated segment 2p22.3-p25, neuroblastoma has been described. The occurrence of all these defects may be explained either by the action of the same gene(s) mapped to 2p24 or by action of some independent factors located in different segments of the short arm. Although the latter hypothesis is much less probable, it can not be rejected at the present time. We propose the existence of a genetic system controlling surveillance of an abnormal embryo to explain the phenotypic differences between patients with the same imbalance within a family. In some {open_quotes}restrictive{close_quotes} combinations the abnormal embryos will die, although in {open_quotes}permissive{close_quotes} combinations they can survive. 47 refs., 2 figs., 3 tabs.

  6. Network Awareness in P2P-TV Applications

    NASA Astrophysics Data System (ADS)

    Traverso, Stefano; Leonardi, Emilio; Mellia, Marco; Meo, Michela

    The increasing popularity of applications for video-streaming based on P2P paradigm (P2P-TV) is raising the interest of both broadcasters and network operators. The former see a promising technology to reduce the cost of streaming content over the Internet, while offering a world-wide service. The latter instead fear that the traffic offered by these applications can grow without control, affecting other services, and possibly causing network congestion and collapse. The “Network-Aware P2P-TV Application over Wise Networks” FP7 project aims at studying and developing a novel P2P-TV application offering the chance to broadcast high definition video to broadcasters and to carefully manage the traffic offered by peers to the network, therefore avoiding worries to Internet providers about network overload. In such context, we design a simulator to evaluate performance of different P2P-TV solutions, to compare them both considering end-users’ and network providers’ perspectives, such as quality of service perceived by subscribers and link utilization. In this paper, we provide some results that show how effective can be a network aware P2P-TV system.

  7. Improving P2P live-content delivery using SVC

    NASA Astrophysics Data System (ADS)

    Schierl, T.; Sánchez, Y.; Hellge, C.; Wiegand, T.

    2010-07-01

    P2P content delivery techniques for video transmission have become of high interest in the last years. With the involvement of client into the delivery process, P2P approaches can significantly reduce the load and cost on servers, especially for popular services. However, previous studies have already pointed out the unreliability of P2P-based live streaming approaches due to peer churn, where peers may ungracefully leave the P2P infrastructure, typically an overlay networks. Peers ungracefully leaving the system cause connection losses in the overlay, which require repair operations. During such repair operations, which typically take a few roundtrip times, no data is received from the lost connection. While taking low delay for fast-channel tune-in into account as a key feature for broadcast-like streaming applications, the P2P live streaming approach can only rely on a certain media pre-buffer during such repair operations. In this paper, multi-tree based Application Layer Multicast as a P2P overlay technique for live streaming is considered. The use of Flow Forwarding (FF), a.k.a. Retransmission, or Forward Error Correction (FEC) in combination with Scalable video Coding (SVC) for concealment during overlay repair operations is shown. Furthermore the benefits of using SVC over the use of AVC single layer transmission are presented.

  8. Unconventional Quantum Criticality Due to Critical Valence Transition

    NASA Astrophysics Data System (ADS)

    Miyake, Kazumasa; Watanabe, Shinji

    2014-06-01

    Quantum criticality due to the valence transition in some Yb-based heavy fermion metals has gradually turned out to play a crucial role to understand the non-Fermi liquid properties that cannot be understood from the conventional quantum criticality theory due to magnetic transitions. Namely, critical exponents giving the temperature (T) dependence of the resistivity ρ(T), the Sommerfeld coefficient, C(T)/T, the magnetic susceptibility, χ(T), and the NMR relaxation rates, 1/(T1T), can be understood as the effect of the critical valence fluctuations of f electrons in Yb ion in a unified way. There also exist a series of Ce-based heavy fermion metals that exhibit anomalies in physical quantities, enhancements of the residual resistivity ρ0 and the superconducting critical temperature (Tc) around the pressure where the valence of Ce sharply changes. Here we review the present status of these problems both from experimental and theoretical aspects.

  9. Valence Electronic Structure of Aqueous Solutions: Insights from Photoelectron Spectroscopy

    NASA Astrophysics Data System (ADS)

    Seidel, Robert; Winter, Bernd; Bradforth, Stephen E.

    2016-05-01

    The valence orbital electron binding energies of water and of embedded solutes are crucial quantities for understanding chemical reactions taking place in aqueous solution, including oxidation/reduction, transition-metal coordination, and radiation chemistry. Their experimental determination based on liquid-photoelectron spectroscopy using soft X-rays is described, and we provide an overview of valence photoelectron spectroscopy studies reported to date. We discuss principal experimental aspects and several theoretical approaches to compute the measured binding energies of the least tightly bound molecular orbitals. Solutes studied are presented chronologically, from simple electrolytes, via transition-metal ion solutions and several organic and inorganic molecules, to biologically relevant molecules, including aqueous nucleotides and their components. In addition to the lowest vertical ionization energies, the measured valence photoelectron spectra also provide information on adiabatic ionization energies and reorganization energies for the oxidation (ionization) half-reaction. For solutes with low solubility, resonantly enhanced ionization provides a promising alternative pathway.

  10. The effect of object-valence relations on automatic evaluation.

    PubMed

    Moran, Tal; Bar-Anan, Yoav

    2013-01-01

    Two experiments tested the effect of co-occurrence of a target object with affective stimuli on automatic evaluation of the target when the relation between the target and the affective stimuli suggests that they have opposite valence. Participants learned about targets that ended an unpleasant noise or a pleasant music. The valence of such targets is opposite to the valence of the affective stimuli that co-occur with them. Participants reported preference for targets that ended noise over targets that ended music, but automatic evaluation measures revealed the opposite preference. This suggests that automatic evaluation is sensitive to co-occurrence between stimuli more than to the relation between the stimuli, and that relational information has a stronger influence on deliberate evaluation than on automatic evaluation. These conclusions support the associative-propositional evaluation model (Gawronski & Bodenhausen, 2006), and add evidence regarding the sensitivity of the evaluative-conditioning effect to relational information.

  11. Direct double photoionization of the valence shell of Be

    SciTech Connect

    Citrini, F.; Malegat, L.; Selles, P.; Kazansky, A.K.

    2003-04-01

    The hyperspherical R-matrix method with semiclassical outgoing waves is used to study the direct double photoionization (DPI) of the valence shell of the lightest alkaline earth-metal Be. The absolute fully integrated, singly, doubly, and triply differential cross sections obtained are compared with the single set of measurements available and with recent calculations based on the convergent close coupling and time-dependent close coupling methods. The level of agreement between all these data is very encouraging. A comparison is also made between the DPI of He and the direct DPI of the valence shell of Be. It confirms that the electron-electron correlations are stronger in the valence 2s shell of Be than in the 1s shell of He, thus contributing to a desirable clarification.

  12. Reversible gels of patchy particles: Role of the valence

    NASA Astrophysics Data System (ADS)

    Russo, John; Tartaglia, Piero; Sciortino, Francesco

    2009-07-01

    We simulate a binary mixture of colloidal patchy particles with two and three patches, respectively, for several relative concentrations and hence relative average valences. For these limited-valence systems, it is possible to reach low temperatures, where the lifetime of the patch-patch interactions becomes longer than the observation time without encountering phase separation in a colloid-poor (gas) and a colloid rich (liquid) phase. The resulting arrested state is a fully connected long-lived network where particles with three patches provide the branching points connecting chains of two-patch particles. We investigate the effect of the valence on the structural and dynamic properties of the resulting gel and attempt to provide a theoretical description of the formation and of the resulting gel structure based on a combination of the Wertheim theory for associated liquids and the Flory-Stockmayer approach for modeling chemical gelation.

  13. Bond-valence methods for p Ka prediction. II. Bond-valence, electrostatic, molecular geometry, and solvation effects

    NASA Astrophysics Data System (ADS)

    Bickmore, Barry R.; Rosso, Kevin M.; Tadanier, Christopher J.; Bylaska, Eric J.; Doud, Darrin

    2006-08-01

    In a previous contribution, we outlined a method for predicting (hydr)oxy-acid and oxide surface acidity constants based on three main factors: bond valence, Me-O bond ionicity, and molecular shape. Here, electrostatics calculations and ab initio molecular dynamics simulations are used to qualitatively show that Me-O bond ionicity controls the extent to which the electrostatic work of proton removal departs from ideality, bond valence controls the extent of solvation of individual functional groups, and bond valence and molecular shape control local dielectric response. These results are consistent with our model of acidity, but completely at odds with other methods of predicting acidity constants for use in multisite complexation models. In particular, our ab initio molecular dynamics simulations of solvated monomers clearly indicate that hydrogen bonding between (hydr)oxo-groups and water molecules adjusts to obey the valence sum rule, rather than maintaining a fixed valence based on the coordination of the oxygen atom as predicted by the standard MUSIC model. However, we also show how our method for p Ka prediction could be improved using ab initio molecular dynamics simulations of solvated surfaces.

  14. Bond-valence methods for pKa prediction. II. Bond-valence, electrostatic, molecular geometry, and solvation effects

    SciTech Connect

    Bickmore, Barry R.; Rosso, Kevin M.; Tadanier, Christopher J.; Bylaska, Eric J.; Doud, Darrin

    2006-08-15

    In a previous contribution, we outlined a method for predicting (hydr)oxy-acid and oxide surface acidity constants based on three main factors: bond valence, Me?O bond ionicity, and molecular shape. Here electrostatics calculations and ab initio molecular dynamics simulations are used to qualitatively show that Me?O bond ionicity controls the extent to which the electrostatic work of proton removal departs from ideality, bond valence controls the extent of solvation of individual functional groups, and bond valence and molecular shape controls local dielectric response. These results are consistent with our model of acidity, but completely at odds with other methods of predicting acidity constants for use in multisite complexation models. In particular, our ab initio molecular dynamics simulations of solvated monomers clearly indicate that hydrogen bonding between (hydr)oxo-groups and water molecules adjusts to obey the valence sum rule, rather than maintaining a fixed valence based on the coordination of the oxygen atom as predicted by the standard MUSIC model.

  15. Dimensionality and its effects upon the valence electronic structure of ordered metallic systems

    SciTech Connect

    Tobin, J.G.

    1983-07-01

    The system c(10x2)Ag/Cu(001) was investigated with Angle-Resolved Photoemission (ARP), Low Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy (AES). LEED and AES provided the calibration of a quartz microbalance used to measure the amount of silver evaporated onto the copper single crystal and also established the monolayer geometrical structure at one monolayer exposure. An off-normal ARP bandmapping study performed with polarized HeI and NeI radiation demonstrated the electronically two-dimensional nature of the silver d-bands at coverages of near one monolayer. The states at the surface Brillouin Zone center were assigned upon the basis of their polarization dependences and a structural model of hexagonal symmetry. A normal emission ARP experiment was performed at the Stanford Synchrotron Radiation Laboratory (SSRL) over the photon energy range of 6 to 32 eV. Data from it documented the evolution of the valence electronic structure of the silver overlayer from a two-dimensional hexagonal valence to a three-dimensional behavior converging towards that of bulk Ag(111). A structural study was attempted using the ARP technique of Normal Emission Photoelectron Diffraction over the photon energy range of 3.4 to 3.7 keV at SSRL, the results of which are inconclusive.

  16. Quantum-mechanical model for valence-electron emission from metal surfaces

    SciTech Connect

    Faraggi, M.N.; Gravielle, M.S.; Silkin, V.M.

    2004-04-01

    Electron emission from the conduction band of metal surfaces is studied under grazing scattering conditions. We investigate this process making use of the quantum-mechanical (QM) model to represent the electronic interactions within the binary collisional formalism. The QM approach is based on the use of the model potential and allows us to describe the main features of the metal surface. It provides a precise description of both one-electron states and surface induced potential. In this work, the approximation is employed to evaluate electron distributions for 100 keV protons impinging grazingly on the Al(111) surface. We have found that the realistic representation of the surface included in the QM model introduces substantial changes in the valence emission at low electron energies and intermediate ejection angles. The influence of the surface wake potential on the valence emission probability is also addressed. In order to compare with experiments, we add the contribution coming from atomic inner shells calculated with the field-distorted-wave approximation. Total theoretical results obtained with the QM model are in fairly good agreement with the available experimental data.

  17. Resonant X-ray scattering measurements of a spatial modulation of the Cu 3d and O 2p energies in stripe-ordered cuprate superconductors.

    PubMed

    Achkar, A J; He, F; Sutarto, R; Geck, J; Zhang, H; Kim, Y-J; Hawthorn, D G

    2013-01-04

    A prevailing description of the stripe phase in underdoped cuprate superconductors is that the charge carriers (holes) phase segregate on a microscopic scale into hole-rich and hole-poor regions. We report resonant elastic x-ray scattering measurements of stripe-ordered La(1.475)Nd(0.4)Sr(0.125)CuO(4) at the Cu L and O K absorption edges that identify an additional feature of stripe order. Analysis of the energy dependence of the scattering intensity reveals that the dominant signature of the stripe order is a spatial modulation in the energies of Cu 3d and O 2p states rather than the large modulation of the charge density (valence) envisioned in the common stripe paradigm. These energy shifts are interpreted as a spatial modulation of the electronic structure and may point to a valence-bond-solid interpretation of the stripe phase.

  18. Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy.

    PubMed

    Wang, Zefang; Zhao, Liang; Mak, Kin Fai; Shan, Jie

    2017-02-08

    We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2 and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first-principles calculations. These values also suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin- and valley-based applications.

  19. Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy

    NASA Astrophysics Data System (ADS)

    Wang, Zefang; Zhao, Liang; Mak, Kin Fai; Shan, Jie

    2017-02-01

    We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2, and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first principles calculations. These values also suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin- and valley-based applications

  20. Band alignment of InAs1-xSbx (0.05

    NASA Astrophysics Data System (ADS)

    Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung

    2009-05-01

    We determined the unstrained conduction-band and valence-band edge energies of InAs1-xSbx (0.05band alignment. Furthermore, the valence band accounts for 65% of the energy-gap bowing of InAsSb. We propose a valence-band anticrossing (VBAC) model to explain the bowing of the valence band in InAsSb. Moreover, the spin-orbit splitting energy of InAsSb calculated by our VBAC model fits well with the experimental results reported in previous studies.

  1. Valence-differential spectroscopy of Co-Fe cyanide films

    NASA Astrophysics Data System (ADS)

    Moritomo, Y.; Nakada, F.; Kurihara, Y.

    2009-03-01

    Electrochromism is extensively investigated for practical application of display and memory devices. To develop the material, reliable information on the optical and electronic properties of the solid film is indispensable. Here, we propose valence-differential spectroscopy that can selectively extract the spectral components related to the oxidized/reduced metal site. We applied the spectroscopy to Co2+-Fe2+δ and Co2+δ-Fe2+ cyanide films with finely control of averaged valence (δ) of the transition metal by external electric pulses. The spectroscopy revealed transition energy E, width Γ, and oscillator strength f of the spectral components related to the transition metal.

  2. Testing bridge-mediated differences in dinuclear valence tautomeric behavior.

    PubMed

    Bin-Salamon, Sofi; Brewer, Scott H; Depperman, Ezra C; Franzen, Stefan; Kampf, Jeff W; Kirk, Martin L; Kumar, R Krishna; Lappi, Simon; Peariso, Katrina; Preuss, Kathryn E; Shultz, David A

    2006-05-29

    Two structurally characterized dinuclear valence tautomers are described. Cobalt ions are bridged by p- and m-phenylene units connected to 2,2'-bipyridines. X-ray crystal structures show that the molecules are in the [(Co(III))(Co(III))] forms at ca. 125 K, while spectroscopic studies show that both molecules can achieve the [(Co(II))(Co(II))] form above 400 K and confirm the [(Co(III))(Co(III))] form below 10 K. Magnetic susceptibility studies are also included. Our results highlight the necessity of studying both crystalline and amorphous samples to distinguish the effects of intrinsic electronic structure and intermolecular forces on valence tautomeric behavior.

  3. High-pressure induced modifications in the hybridization gap of the intermediate-valence compound SmB6

    NASA Astrophysics Data System (ADS)

    Nishiyama, K.; Mito, T.; Pristáš, G.; Koyama, T.; Ueda, K.; Kohara, T.; Gabáni, S.; Flachbart, K.; Fukazawa, H.; Kohori, Y.; Takeshita, N.; Shitsevalova, N.; Ikeda, H.

    2016-03-01

    We have carried out the measurements of high-pressure 11B -nuclear magnetic resonance on the intermediate-valence compound SmB6 to investigate the effects of pressure on Sm 4 f states and the quasiparticle band. From the measurements of spin-lattice relaxation time, just below the critical pressure Pc of nonmagnetic-magnetic phase transition, we find that quasiparticle bandwidth clearly decreases with pressure, while the insulating gap is almost constant or slightly increases. The latter is consistent with the result of a band-structure calculation. These pressure induced modifications in the band structure indicate the enhancement of the density of states of the quasiparticles when approaching Pc. The pressure dependence of the Sm 4 f states and the origin of the insulating gap are well explained in terms of exchange interactions between conduction and 4 f electrons.

  4. NMR study of heavy fermion compound EuNi2P2

    NASA Astrophysics Data System (ADS)

    Magishi, K.; Watanabe, R.; Hisada, A.; Saito, T.; Koyama, K.; Fujiwara, T.

    2015-03-01

    We report the results of 31P-nuclear magnetic resonance (NMR) measurements on heavy fermion compound EuNi2P2 in order to investigate the magnetic properties at low temperatures from a microscopic view point. The Knight shift has a negative value in an entire temperature range, and the absolute value increases with decreasing temperature but exhibits a broad maximum around 40 K, which is similar to the behavior of the magnetic susceptibility. Also, the nuclear spin-lattice relaxation rate 1/T1 is almost constant at high temperatures above 200 K, which is reminiscent of the relaxation mechanism dominated by the interaction of the 31P nucleus with fluctuating Eu-4f moments. Below 200 K, 1/T1 gradually decreases on cooling due to the change of the valence in the Eu ion. At low temperatures, 1/T1 does not obey the Korringa relation, in contrast to typical heavy fermion compounds. The nuclear spin-spin relaxation rate 1/T2 shows the similar behavior as 1/T1 at high temperatures. But, below 50 K, 1/T2 increases upon cooling due to the development of the magnetic excitation.

  5. NMR studies of ordered structures and valence states in the successive valence-transition system EuPtP

    NASA Astrophysics Data System (ADS)

    Mito, T.; Nishitani, K.; Koyama, T.; Muta, H.; Maruyama, T.; Pristáš, G.; Ueda, K.; Kohara, T.; Mitsuda, A.; Sugishima, M.; Wada, H.

    2014-11-01

    We have studied EuPtP, which undergoes two successive valence transitions at TA˜240 K and TB˜200 K by 31P-nuclear magnetic resonance (NMR) measurements. From the analysis of NMR spectra, we obtained plausible ordered structures and Eu valence states in three phases divided by TA and TB. These ordered structures well explain observed inequivalent P sites and the intensity ratio of the NMR spectra arising from these P sites. The results are also in good accordance with mean Eu valence measured by the x-ray absorption spectroscopy. We also discuss Eu 4 f states and the origin of the transitions from the measurements of nuclear spin lattice relaxation rate and hyperfine coupling constant.

  6. Representations of modality-general valence for videos and music derived from fMRI data.

    PubMed

    Kim, Jongwan; Shinkareva, Svetlana V; Wedell, Douglas H

    2017-03-01

    This study tested for neural representations of valence that are shared across visual and auditory modalities referred to as modality-general representations. On a given trial participants made either affective or semantic judgments of short silent videos or music samples. For each modality valence was manipulated at three levels, positive, neutral, and negative, while controlling for the level of arousal. Whole-brain crossmodal identification of affect indicated the presence of modality-general valence representations that distinguished 1) positive from negative trials (signed valence) and 2) valenced from non-valenced trials (unsigned valence). These results generalized across the two tasks. Brain regions that were sensitive to valence states in the same way for both modalities were identified by searchlight analysis of fMRI data by comparing the correlation of voxel responses to the same and different valence conditions across the two modalities. These analyses identified seven clusters that distinguished signed valence, unsigned valence or both. Signed valence was represented in the precuneus, unsigned valence in the bilateral medial prefrontal cortex, superior temporal sulcus (STS)/postcentral, and middle frontal gyrus (MFG) and both types were represented in the STS/MFG and thalamus. These results support the idea that modality general valence is represented in a network of several locations throughout the brain.

  7. Nanoscale Studies of Energy Band Gaps and Band Offsets in Compound Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Chang, Alexander S.

    The identification of the precise band offsets at semiconductor interfaces is crucially important for the successful development of electronic and optoelectronic devices. However, issues at the interfaces, such as strain or defects, needs to be investigated for precise band tuning of semiconductor heterostructures. In this dissertation, the nanometer-scale structural and electronic properties of InGaAs(Sb)N/GaAs interfaces, InGaN/GaN QDs, and GaSb/GaAs QDs are investigated using a combination of XSTM and STS. The influence of Sb incorporation on the InGaAs(Sb)N/GaAs band alignment is investigated. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed, due to strain-induced splitting of the valence band and the incorporation of Sb. Band tuning of both conduction and valence band edges with the incorporation of Sb can be used to engineer the band structure with strong confinement of electrons and holes in the InGaAsSbN quantum well layer, which is promising for light emitting applications. The influence of the growth substrate on InGaN/GaN QD formation and properties is examined. The QD density, dimension, and band gaps are compared for different InGaN QDs on free-standing GaN or GaN/AlN/sapphire substrates. We present different sources using nucleation on different substrates, and discuss their influences on the electronic band structure. Our work suggests that a wide variety of InGaN QD dimension, density, and band structure can be achieved by using different starting substrate and number of layers of InGaN QD stacks. Furthermore, the influence of strain and dislocation on the GaSb/GaAs QD band alignment is investigated using both experimental and computational tools. A combination of cross-sectional transmission electron microscopy (XTEM), XSTM, and STS reveals the formation of misfit dislocations and both coherent and semi-coherent clustered QDs, independent of Sb- vs. As-termination of the GaAs surface. Furthermore, finite

  8. Managing Linguistic Data Summaries in Advanced P2P Applications

    NASA Astrophysics Data System (ADS)

    Hayek, Rabab; Raschia, Guillaume; Valduriez, Patrick; Mouaddib, Noureddine

    As the amount of stored data increases, data localization techniques become no longer sufficient in P2P systems. A practical approach is to rely on compact database summaries rather than raw database records, whose access is costly in large P2P systems. In this chapter, we describe a solution for managing linguistic data summaries in advanced P2P applications which are dealing with semantically rich data. The produced summaries are synthetic, multidimensional views over relational tables. The novelty of this proposal relies on the double summary exploitation in distributed P2P systems. First, as semantic indexes, they support locating relevant nodes based on their data descriptions. Second, due to their intelligibility, these summaries can be directly queried and thus approximately answer a query without the need for exploring original data. The proposed solution consists first in defining a summary model for hierarchical P2P systems. Second, appropriate algorithms for summary creation and maintenance are presented. A query processing mechanism, which relies on summary querying, is then proposed to demonstrate the benefits that might be obtained from summary exploitation.

  9. Determinants of Default in P2P Lending.

    PubMed

    Serrano-Cinca, Carlos; Gutiérrez-Nieto, Begoña; López-Palacios, Luz

    2015-01-01

    This paper studies P2P lending and the factors explaining loan default. This is an important issue because in P2P lending individual investors bear the credit risk, instead of financial institutions, which are experts in dealing with this risk. P2P lenders suffer a severe problem of information asymmetry, because they are at a disadvantage facing the borrower. For this reason, P2P lending sites provide potential lenders with information about borrowers and their loan purpose. They also assign a grade to each loan. The empirical study is based on loans' data collected from Lending Club (N = 24,449) from 2008 to 2014 that are first analyzed by using univariate means tests and survival analysis. Factors explaining default are loan purpose, annual income, current housing situation, credit history and indebtedness. Secondly, a logistic regression model is developed to predict defaults. The grade assigned by the P2P lending site is the most predictive factor of default, but the accuracy of the model is improved by adding other information, especially the borrower's debt level.

  10. Determinants of Default in P2P Lending

    PubMed Central

    2015-01-01

    This paper studies P2P lending and the factors explaining loan default. This is an important issue because in P2P lending individual investors bear the credit risk, instead of financial institutions, which are experts in dealing with this risk. P2P lenders suffer a severe problem of information asymmetry, because they are at a disadvantage facing the borrower. For this reason, P2P lending sites provide potential lenders with information about borrowers and their loan purpose. They also assign a grade to each loan. The empirical study is based on loans’ data collected from Lending Club (N = 24,449) from 2008 to 2014 that are first analyzed by using univariate means tests and survival analysis. Factors explaining default are loan purpose, annual income, current housing situation, credit history and indebtedness. Secondly, a logistic regression model is developed to predict defaults. The grade assigned by the P2P lending site is the most predictive factor of default, but the accuracy of the model is improved by adding other information, especially the borrower’s debt level. PMID:26425854

  11. Protecting Data Privacy in Structured P2P Networks

    NASA Astrophysics Data System (ADS)

    Jawad, Mohamed; Serrano-Alvarado, Patricia; Valduriez, Patrick

    P2P systems are increasingly used for efficient, scalable data sharing. Popular applications focus on massive file sharing. However, advanced applications such as online communities (e.g., medical or research communities) need to share private or sensitive data. Currently, in P2P systems, untrusted peers can easily violate data privacy by using data for malicious purposes (e.g., fraudulence, profiling). To prevent such behavior, the well accepted Hippocratic database principle states that data owners should specify the purpose for which their data will be collected. In this paper, we apply such principles as well as reputation techniques to support purpose and trust in structured P2P systems. Hippocratic databases enforce purpose-based privacy while reputation techniques guarantee trust. We propose a P2P data privacy model which combines the Hippocratic principles and the trust notions. We also present the algorithms of PriServ, a DHT-based P2P privacy service which supports this model and prevents data privacy violation. We show, in a performance evaluation, that PriServ introduces a small overhead.

  12. An efficient query mechanism base on P2P networks

    NASA Astrophysics Data System (ADS)

    Wang, Xiaohua; Mu, Aiqin; Zhao, Defang

    2013-07-01

    How to implement the efficient query is the key problem deployed on P2P networks. This paper analyses the shortage of several query algorithm, and presents a new algorithm DDI, which means distributed searching with double indices. It discusses the popularity of documents and the linking status of the networks, and calculates the availability of the nodes in whole network, determines the route of the query process. It compares the items of time using, the quantity of requests and update information by the emulate experiments. Along with the rapid development of computer network technology, peer-to-peer (referred to as P2P) network research has gradually become mature, and it is widely used in different fields, some large P2P computing project has entered the implementation stage. At present, many more popular software systems such as Gnutella, Freenet, Napster are deployed based on P2P technology. How to achieve effective information query has become one of the key problems of P2P research.

  13. Spectroscopic consequences of a mixed valence excited state: quantitative treatment of a dihydrazine diradical dication.

    PubMed

    Lockard, Jenny V; Zink, Jeffrey I; Konradsson, Asgeir E; Weaver, Michael N; Nelsen, Stephen F

    2003-11-05

    A model for the quantitative treatment of molecular systems possessing mixed valence excited states is introduced and used to explain observed spectroscopic consequences. The specific example studied in this paper is 1,4-bis(2-tert-butyl-2,3-diazabicyclo[2.2.2]oct-3-yl)-2,3,5,6-tetramethylbenzene-1,4-diyl dication. The lowest energy excited state of this molecule arises from a transition from the ground state where one positive charge is associated with each of the hydrazine units, to an excited state where both charges are associated with one of the hydrazine units, that is, a Hy-to-Hy charge transfer. The resulting excited state is a Class II mixed valence molecule. The electronic emission and absorption spectra, and resonance Raman spectra, of this molecule are reported. The lowest energy absorption band is asymmetric with a weak low-energy shoulder and an intense higher energy peak. Emission is observed at low temperature. The details of the absorption and emission spectra are calculated for the coupled surfaces by using the time-dependent theory of spectroscopy. The calculations are carried out in the diabatic basis, but the nuclear kinetic energy is explicitly included and the calculations are exact quantum calculations of the model Hamiltonian. Because the transition involves the transfer of an electron from the hydrazine on one side of the molecule to the hydrazine on the other side and vice versa, the two transitions are antiparallel and the transition dipole moments have opposite signs. Upon transformation to the adiabatic basis, the dipole moment for the transition to the highest energy adiabatic surface is nonzero, but that for the transition to the lowest surface changes sign at the origin. The energy separation between the two components of the absorption spectrum is twice the coupling between the diabatic basis states. The bandwidths of the electronic spectra are caused by progressions in totally symmetric modes as well as progressions in the modes

  14. Intermediate band solar cell with extreme broadband spectrum quantum efficiency.

    PubMed

    Datas, A; López, E; Ramiro, I; Antolín, E; Martí, A; Luque, A; Tamaki, R; Shoji, Y; Sogabe, T; Okada, Y

    2015-04-17

    We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ∼6000  nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidence indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable.

  15. Nonequilibrium Green's function formulation of intersubband absorption for nonparabolic single-band effective mass Hamiltonian

    SciTech Connect

    Kolek, Andrzej

    2015-05-04

    The formulas are derived that enable calculations of intersubband absorption coefficient within nonequilibrium Green's function method applied to a single-band effective-mass Hamiltonian with the energy dependent effective mass. The derivation provides also the formulas for the virtual valence band components of the two-band Green's functions which can be used for more exact estimation of the density of states and electrons and more reliable treatment of electronic transport in unipolar n-type heterostructure semiconductor devices.

  16. Excited-state mixed-valence distortions in a diisopropyl diphenyl hydrazine cation.

    PubMed

    Lockard, Jenny V; Zink, Jeffrey I; Luo, Yun; Weaver, Michael N; Konradsson, Asgeir E; Fowble, Joseph W; Nelsen, Stephen F

    2006-12-27

    Excited-state mixed valence (ESMV) occurs in the 1,2-diphenyl-1,2-diisopropyl hydrazine radical cation, a molecule in which the ground state has a symmetrical charge distribution localized primarily on the hydrazine, but the phenyl to hydrazine charge-transfer excited state has two interchangeably equivalent phenyl groups that have different formal oxidation states. Electronic absorption and resonance Raman spectra are presented. The neighboring orbital model is employed to interpret the absorption spectrum and coupling. Resonance Raman spectroscopy is used to determine the excited-state distortions. The frequencies of the enhanced modes from the resonance Raman spectra are used together with the time-dependent theory of spectroscopy to fit the two observed absorption bands that have resolved vibronic structure. The origins of the vibronic structure and relationships with the neighboring orbital model are discussed.

  17. The Fermi surface and f-valence electron count of UPt{sub 3}.

    SciTech Connect

    McMullan, G. J.; Rourke, P. M. C.; Norman, M. R.; Huxley, A. D.; Doiron-Layraud, N.; Flouquet, J.; Lonzarich, G. G.; McCollam, A.; Julian, S. R.; Materials Science Division; MRC Lab. Molecular Biology; Univ. of Toronto; School of Phys. Edinburgh; Univ. de Sherbrooke; CEA Univ. of Cambridge

    2008-01-01

    Combining old and new de Haas-van Alphen (dHvA) and magnetoresistance data, we arrive at a detailed picture of the Fermi surface of the heavy fermion superconductor UPt{sub 3}. Our work was partially motivated by a new proposal that two 5f valence electrons per formula unit in UPt{sub 3} are localized by correlation effects--agreement with previous dHvA measurements of the Fermi surface was invoked in its support. Comprehensive comparison with our new observations shows that this 'partially localized' model fails to predict the existence of a major sheet of the Fermi surface, and is therefore less compatible with experiment than the originally proposed 'fully itinerant' model of the electronic structure of UPt{sub 3}. In support of this conclusion, we offer a more complete analysis of the fully itinerant band structure calculation, where we find a number of previously unrecognized extremal orbits on the Fermi surface.

  18. Methodological CASPT2 study of the valence excited states of an iron-porphyrin complex.

    PubMed

    Ben Amor, Nadia; Soupart, Adrien; Heitz, Marie-Catherine

    2017-02-01

    The singlet valence excited states of an iron-porphyrin-pyrazine-carbonyl complex are investigated up to the Soret band (about 3 eV) using multi-state complete active space with perturbation at the second order (MS-CASPT2). This complex is a model for the active site of carboxy-hemoglobin/myoglobin. The spectrum of the excited states is rather dense, comprising states of different nature: d→π* transitions, d→d states, π→π* excitations of the porphyrin, and doubly excited states involving simultaneous intra-porphyrin π→π* and d→d transitions. Specific features of the MS-CASPT2 method are investigated. The effect of varying the number of roots in the state average calculation is quantified as well as the consequence of targeted modifications of the active space. The effect of inclusion of standard ionization potential-electron affinity (IPEA) shift in the perturbation treatment is also investigated.

  19. The determination of dopant ion valence distributions in insulating crystals using XANES measurements.

    PubMed

    Hughes-Currie, Rosa B; Ivanovskikh, Konstantin V; Wells, Jon-Paul R; Reid, Michael F; Gordon, Robert A

    2016-04-06

    Ytterbium-doped wide-bandgap fluoride crystals CaF2, SrF2 and NaMgF3 have been measured using x-ray absorption near edge structure (XANES) on the L3 edge to determine the ratio of trivalent to divalent Yb ions present in the crystals. This study improves upon previous XANES measurements of dopant ion valency by taking into account the x-ray emission transition probabilities for the divalent and trivalent species instead of simply assuming that the relative concentrations may be determined by the ratio of the x-ray excitation band areas. Trivalent to divalent ratios as high as 5 are inferred even at low total dopant ion concentrations of 0.05 mol% Yb.

  20. The determination of dopant ion valence distributions in insulating crystals using XANES measurements

    NASA Astrophysics Data System (ADS)

    Hughes-Currie, Rosa B.; Ivanovskikh, Konstantin V.; Wells, Jon-Paul R.; Reid, Michael F.; Gordon, Robert A.

    2016-04-01

    Ytterbium-doped wide-bandgap fluoride crystals CaF2, SrF2 and NaMgF3 have been measured using x-ray absorption near edge structure (XANES) on the L3 edge to determine the ratio of trivalent to divalent Yb ions present in the crystals. This study improves upon previous XANES measurements of dopant ion valency by taking into account the x-ray emission transition probabilities for the divalent and trivalent species instead of simply assuming that the relative concentrations may be determined by the ratio of the x-ray excitation band areas. Trivalent to divalent ratios as high as 5 are inferred even at low total dopant ion concentrations of 0.05 mol% Yb.

  1. High Performance Rh2P Electrocatalyst for Efficient Water Splitting.

    PubMed

    Duan, Haohong; Li, Dongguo; Tang, Yan; He, Yang; Fang, Ji Shu; Wang, Rongyue; Lv, Haifeng; Lopes, Pietro P; Paulikas, Arvydas P; Li, Haoyi; Mao, Scott X; Wang, Chong-Min; Markovic, Nenad M; Li, Jun; Stamenkovic, Vojislav R; Li, Yadong

    2017-03-26

    Search for active, stable and cost-efficient electrocataltysts for hydrogen production via water splitting could make substantial impact to the energy technologies that do not rely on fossil fuels. Here we report the synthesis of rhodium phosphide electrocatalyst with low metal loading in the form of nanocubes (NCs) dispersed in high surface area carbon (Rh2P/C) by a facile solvo-thermal approach. The Rh2P/C exhibit remarkable performance for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) compared to Rh/C and Pt/C catalysts. The atomic structure of the Rh2P NCs was directly observed by annular dark-field scanning transmission electron microscopy (ADF-STEM), which revealed phosphorous-rich outermost atomic layer. Combined experimental and computational studies suggest that surface phosphorous plays crucial role in determining the robust catalyst properties.

  2. Fragrance material review on 2-(p-tolyloxy)ethyl acetate.

    PubMed

    McGinty, D; Letizia, C S; Api, A M

    2012-09-01

    A toxicologic and dermatologic review of 2-(p-tolyloxy)ethyl acetate when used as a fragrance ingredient is presented. 2-(p-tolyloxy)ethyl acetate is a member of the fragrance structural group aryl alkyl alcohol simple acid esters (AAASAE). The AAASAE fragrance ingredients are prepared by reacting an aryl alkyl alcohol with a simple carboxylic acid (a chain of 1-4 carbons) to generate formate, acetate, propionate, butyrate, isobutyrate and carbonate esters. This review contains a detailed summary of all available toxicology and dermatology papers that are related to this individual fragrance ingredient and is not intended as a stand-alone document. Available data for 2-(p-tolyloxy)ethyl acetate were evaluated, then summarized, and includes physical properties data. A safety assessment of the entire AAASAE will be published simultaneously with this document. Please refer to Belsito et al. (2012) for an overall assessment of the safe use of this material and all AAASAE in fragrances.

  3. Market Design for a P2P Backup System

    NASA Astrophysics Data System (ADS)

    Seuken, Sven; Charles, Denis; Chickering, Max; Puri, Sidd

    Peer-to-peer (P2P) backup systems are an attractive alternative to server-based systems because the immense costs of large data centers can be saved by using idle resources on millions of private computers instead. This paper presents the design and theoretical analysis of a market for a P2P backup system. While our long-term goal is an open resource exchange market using real money, here we consider a system where monetary transfers are prohibited. A user who wants to backup his data must in return supply some of his resources (storage space, upload and download bandwidth) to the system.We propose a hybrid P2P architecture where all backup data is transferred directly between peers, but a dedicated server coordinates all operations and maintains meta-data. We achieve high reliability guarantees while keeping our data replication factor low by adopting sophisticated erasure coding technology (cf., [2]).

  4. Wavelet-based study of valence-arousal model of emotions on EEG signals with LabVIEW.

    PubMed

    Guzel Aydin, Seda; Kaya, Turgay; Guler, Hasan

    2016-06-01

    This paper illustrates the wavelet-based feature extraction for emotion assessment using electroencephalogram (EEG) signal through graphical coding design. Two-dimensional (valence-arousal) emotion model was studied. Different emotions (happy, joy, melancholy, and disgust) were studied for assessment. These emotions were stimulated by video clips. EEG signals obtained from four subjects were decomposed into five frequency bands (gamma, beta, alpha, theta, and delta) using "db5" wavelet function. Relative features were calculated to obtain further information. Impact of the emotions according to valence value was observed to be optimal on power spectral density of gamma band. The main objective of this work is not only to investigate the influence of the emotions on different frequency bands but also to overcome the difficulties in the text-based program. This work offers an alternative approach for emotion evaluation through EEG processing. There are a number of methods for emotion recognition such as wavelet transform-based, Fourier transform-based, and Hilbert-Huang transform-based methods. However, the majority of these methods have been applied with the text-based programming languages. In this study, we proposed and implemented an experimental feature extraction with graphics-based language, which provides great convenience in bioelectrical signal processing.

  5. Faraday effect in Sn2P2S6 crystals.

    PubMed

    Krupych, Oleh; Adamenko, Dmytro; Mys, Oksana; Grabar, Aleksandr; Vlokh, Rostyslav

    2008-11-10

    We have revealed a large Faraday rotation in tin thiohypodiphosphate (Sn(2)P(2)S(6)) crystals, which makes this material promising for magneto-optics. The effective Faraday tensor component and the Verdet constant for the direction of the optic axis have been determined by measuring the pure Faraday rotation in Sn(2)P(2)S(6) crystals with both the single-ray and small-angular polarimetric methods at the normal conditions and a wavelength of 632.8 nm. The effective Verdet constant is found to be equal to 115 rad/T x m.

  6. Mini Magnetospheric Plasma Propulsion (M2P2)

    NASA Technical Reports Server (NTRS)

    Gallagher, Dennis; Winglee, Robert

    2000-01-01

    The M2P2 concept is based on the transfer of momentum from the solar wind to an artificial magnetic field structure like that naturally occurs at all magnetized planets in the Solar System, called the magnetosphere. The objectives of this program include the following: (1) Demonstrate artificial magnetospheric inflation through cold plasma filling in vacuum; (2) Demonstrate deflection of a surrogate solar wind by an artificial magnetosphere in the laboratory vacuum chamber; (3) Compare theoretical calculations for thrust forces with laboratory measurements; (4) Develop flight control algorithms for planning mission specific trajectories; and (5) Develop M2P2 system concept.

  7. The Social Impact of P2P Systems

    NASA Astrophysics Data System (ADS)

    Glorioso, Andrea; Pagallo, Ugo; Ruffo, Giancarlo

    The chapter deals with the social impact of P2P systems in light of a bidirectional connection by which technological developments influence, in a complex and often unpredictable way, the social environment whereas the dynamic evolution of the latter does affect technological progress. From this perspective, the aim is to deepen legal issues, sociological trends, economical aspects, and political dimensions of P2P technology, along with some of its next possible outputs, in order to assess one of the most compelling alternatives to the traditional frame of highly centralized human interaction.

  8. Emotional Valence and Arousal Effects on Memory and Hemispheric Asymmetries

    ERIC Educational Resources Information Center

    Mneimne, Malek; Powers, Alice S.; Walton, Kate E.; Kosson, David S.; Fonda, Samantha; Simonetti, Jessica

    2010-01-01

    This study examined predictions based upon the right hemisphere (RH) model, the valence-arousal model, and a recently proposed integrated model (Killgore & Yurgelun-Todd, 2007) of emotion processing by testing immediate recall and recognition memory for positive, negative, and neutral verbal stimuli among 35 right-handed women. Building upon…

  9. Voice and Valency in San Luis Potosi Huasteco

    ERIC Educational Resources Information Center

    Munoz Ledo Yanez, Veronica

    2014-01-01

    This thesis presents an analysis of the system of transitivity, voice and valency alternations in Huasteco of San Luis Potosi (Mayan) within a functional-typological framework. The study is based on spoken discourse and elicited data collected in the municipalities of Aquismon and Tancanhuitz de Santos in the state of San Luis Potosi, Mexico. The…

  10. Vection Modulates Emotional Valence of Autobiographical Episodic Memories

    ERIC Educational Resources Information Center

    Seno, Takeharu; Kawabe, Takahiro; Ito, Hiroyuki; Sunaga, Shoji

    2013-01-01

    We examined whether illusory self-motion perception ("vection") induced by viewing upward and downward grating motion stimuli can alter the emotional valence of recollected autobiographical episodic memories. We found that participants recollected positive episodes more often while perceiving upward vection. However, when we tested a small moving…

  11. Opposing influences of affective state valence on visual cortical encoding.

    PubMed

    Schmitz, Taylor W; De Rosa, Eve; Anderson, Adam K

    2009-06-03

    Positive and negative emotional states are thought to have originated from fundamentally opposing approach and avoidance behaviors. Furthermore, affective valence has been hypothesized to exert opposing biases in cognitive control. Here we examined with functional magnetic resonance imaging whether the opposing influences of positive and negative states extend to perceptual encoding in the visual cortices. Based on prior behavioral research, we hypothesized that positive states would broaden and negative states would narrow visual field of view (FOV). Positive, neutral, and negative states were induced on alternating blocks. To index FOV, observers then viewed brief presentations (300 ms) of face/place concentric center/surround stimuli on interleaved blocks. Central faces were attended, rendering the place surrounds unattended. As face and place information was presented at different visual eccentricities, our physiological metric of FOV was a valence-dependent modulation of place processing in the parahippocampal place area (PPA). Consistent with our hypotheses, positive affective states increased and negative states decreased PPA response to novel places as well as adaptation to repeated places. Individual differences in self-reported positive and negative affect correlated inversely with PPA encoding of peripheral places, as well as with activation in the mesocortical prefrontal cortex and amygdala. Psychophysiological interaction analyses further demonstrated that valence-dependent responses in the PPA arose from opponent coupling with extrafoveal regions of the primary visual cortex during positive and negative states. These findings collectively suggest that affective valence differentially biases gating of early visual inputs, fundamentally altering the scope of perceptual encoding.

  12. Valence, Covalence, Hypervalence, Oxidation State, and Coordination Number

    ERIC Educational Resources Information Center

    Smith, Derek W.

    2005-01-01

    Valence as a numerical measure of an atom's combining power, expressed by the number of bonds it forms in a molecular formulation of the compound in question, was unable to cope with coordination compounds. The covalence of an atom is the nearest model equivalent, but is subject to ambiguity since it often depends on which bonding model is being…

  13. Tagging Multiple Emotional Stimuli: Negative Valence Has Little Benefit

    ERIC Educational Resources Information Center

    Watson, Derrick G.; Blagrove, Elisabeth

    2012-01-01

    Six experiments examined the influence of emotional valence on the tagging and enumeration of multiple targets. Experiments 1, 5 and 6 found that there was no difference in the efficiency of tagging/enumerating multiple negative or positive stimuli. Experiment 2 showed that, when neutral-expression face distractors were present, enumerating…

  14. Valence state of Ti in conductive nanowires in sapphire

    SciTech Connect

    Mizoguchi, Teruyasu; Nakamura, Atsutomo; Matsunaga, Katsuyuki; Ikuhara, Yuichi; Sakurai, Masaki; Tanaka, Isao; Yamamoto, Takahisa

    2004-10-15

    In order to reveal the valence state of Ti in conductive nanowires in sapphire, near-edge x-ray-absorption fine structures (NEXAFS) were observed. From experimental and theoretical studies on NEXAFS of reference compounds including rutile, anatase, and Ti{sub 2}O{sub 3}, it was found that the valence state of Ti can be identified by regarding the positions of the spectral onset and the shoulder in the main peak of Ti-K NEXAFS. The valence states of Ti doped Al{sub 2}O{sub 3} polycrystalline specimens which were annealed at oxidized and reduced atmospheres were determined to be +4 and +3, respectively. The solubility limit of Ti in Al{sub 2}O{sub 3} polycrystal was found to be between 1000 ppm to 1.0% at the both atmospheres. The spectrum from Ti nanowires in sapphire has a lot of similarities to the reduced specimen, the valence state was therefore concluded to be +3.

  15. Design of medium band gap Ag-Bi-Nb-O and Ag-Bi-Ta-O semiconductors for driving direct water splitting with visible light.

    PubMed

    Wang, Limin; Cao, Bingfei; Kang, Wei; Hybertsen, Mark; Maeda, Kazuhiko; Domen, Kazunari; Khalifah, Peter G

    2013-08-19

    Two new metal oxide semiconductors belonging to the Ag-Bi-M-O (M = Nb, Ta) chemical systems have been synthesized as candidate compounds for driving overall water splitting with visible light on the basis of cosubstitution of Ag and Bi on the A-site position of known Ca2M2O7 pyrochlores. The low-valence band edge energies of typical oxide semiconductors prevents direct water splitting in compounds with band gaps below 3.0 eV, a limitation which these compounds are designed to overcome through the incorporation of low-lying Ag 4d(10) and Bi 6s(2) states into compounds of nominal composition "AgBiM2O7". It was found that the "AgBiTa2O7" pyrochlores are in fact a solid solution with an approximate range of Ag(x)Bi(5/6)Ta2O(6.25+x/2) with 0.5 < x < 1. The structure of Ag4/5Bi5/6Ta2O6.65 was determined from the refinement of time-of-flight neutron diffraction data and was found to be a cubic pyrochlore with a = 10.52268(2) Å and a volume of 1165.143(6) Å(3). The closely related compound, AgBiNb2O7, appears to have an integer stoichiometry and to adopt an orthorhombically distorted pyrochlore-related structure with a subcell of a = 7.50102(8) Å, b = 7.44739(7) Å, c = 10.5788(1) Å, and V = 590.93(2) Å(3). Density functional theory-based calculations predict this distortion should result from A-site cation ordering. Fits to UV-vis diffuse reflectance data suggest that AgBiNb2O7 and "AgBiTa2O7" are both visible-light-absorbing semiconductors with the onset of strong direct absorption at 2.72 and 2.96 eV, respectively. Electronic structure calculations for an ordered AgBiNb2O7 structure show that the band gap reduction and the elevation of the valence band primarily result from hybridized Ag d(10)-O 2p orbitals that lie at higher energy than the normal O 2p states in typical pyrochlore oxides. While the minimum energy gap is direct in the band structure, the lowest energy dipole allowed optical transitions start about 0.2 eV higher in energy than the minimum energy

  16. Numerical simulation on n-MoS2/p-Si heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Deng, Quanrong; Li, Yiqi; Shen, Yonglong; Chen, Lian; Wang, Geming; Wang, Shenggao

    2017-03-01

    n-MoS2/p-Si heterojunction solar cells were simulated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) software. In order to fundamentally understand the mechanism of such kind of cells, the effects of electron affinity, band gap and thickness for MoS2, as well as the donor concentration in Si layer on the devices performance were simulated and discussed in detail. The effects of defect states in Si layer and at n-MoS2/p-Si interface on the performance of devices were also simulated. It is demonstrated that two-dimensional monolayer MoS2 with the highest band gap of 1.8 eV is the optimized option for ideal devices which can give out the highest efficiency over 19.0%. Si layer with higher acceptor concentration is more likely to be recommended in achieving higher power conversion efficiency if defect level can be effectively controlled. The defect states in Si layer and at MoS2/Si interface were identified to influence the performance of the devices significantly.

  17. Measurement and analysis of P2P IPTV program resource.

    PubMed

    Wang, Wenxian; Chen, Xingshu; Wang, Haizhou; Zhang, Qi; Wang, Cheng

    2014-01-01

    With the rapid development of P2P technology, P2P IPTV applications have received more and more attention. And program resource distribution is very important to P2P IPTV applications. In order to collect IPTV program resources, a distributed multi-protocol crawler is proposed. And the crawler has collected more than 13 million pieces of information of IPTV programs from 2009 to 2012. In addition, the distribution of IPTV programs is independent and incompact, resulting in chaos of program names, which obstructs searching and organizing programs. Thus, we focus on characteristic analysis of program resources, including the distributions of length of program names, the entropy of the character types, and hierarchy depth of programs. These analyses reveal the disorderly naming conventions of P2P IPTV programs. The analysis results can help to purify and extract useful information from chaotic names for better retrieval and accelerate automatic sorting of program and establishment of IPTV repository. In order to represent popularity of programs and to predict user behavior and popularity of hot programs over a period, we also put forward an analytical model of hot programs.

  18. Measurement and Analysis of P2P IPTV Program Resource

    PubMed Central

    Chen, Xingshu; Wang, Haizhou; Zhang, Qi

    2014-01-01

    With the rapid development of P2P technology, P2P IPTV applications have received more and more attention. And program resource distribution is very important to P2P IPTV applications. In order to collect IPTV program resources, a distributed multi-protocol crawler is proposed. And the crawler has collected more than 13 million pieces of information of IPTV programs from 2009 to 2012. In addition, the distribution of IPTV programs is independent and incompact, resulting in chaos of program names, which obstructs searching and organizing programs. Thus, we focus on characteristic analysis of program resources, including the distributions of length of program names, the entropy of the character types, and hierarchy depth of programs. These analyses reveal the disorderly naming conventions of P2P IPTV programs. The analysis results can help to purify and extract useful information from chaotic names for better retrieval and accelerate automatic sorting of program and establishment of IPTV repository. In order to represent popularity of programs and to predict user behavior and popularity of hot programs over a period, we also put forward an analytical model of hot programs. PMID:24772008

  19. Breit-Pauli energy levels belonging to 2p 4, 2s2p 5, 2p 6, 2p 33ℓ configurations and all E1 transitions among these levels in Mg V

    NASA Astrophysics Data System (ADS)

    Deb, N. C.; Hibbert, A.

    2007-07-01

    We present accurate oscillator strengths, line strengths and radiative rates for 1073 E1 transitions among the 86 levels belonging to 2s 22p 4, 2s2p 5, 2p 6, and 2s 22p 3( 4S o, 2D o, 2P o)3ℓ configurations in Mg V. We have used 1s and 2s Hartree-Fock orbitals, re-optimized 2p on 2p 3( 2D o)3s 3D o and optimized 3s,3p,3d orbitals on real states. Sixteen additional orbitals up to 8d are optimized either as a correction to n = 3 physical orbitals or as a correlation orbital. A very large set of configurations including up to three electron promotions are used to account for all important correlation effects. All of the main five terms in the Breit-Pauli operator (except the orbit-orbit interaction) are included in order to account for the relativistic effects. Small adjustments to the diagonal elements of the Hamiltonian matrix are made to bring the calculated energies within a few cm -1 of the corresponding NIST recommended data wherever available. The calculated oscillator strengths, line strengths, and radiative rates for almost all of the E1 transitions show excellent agreement with the corresponding MCDF results of Fischer. The recent results of Bhatia et al. are found to be consistently higher by 20-45%. The accuracy of the present calculation is considered to be better than the NIST accuracy ratings for various transitions.

  20. Photodissociation of carbon dioxide in singlet valence electronic states. II. Five state absorption spectrum and vibronic assignment.

    PubMed

    Grebenshchikov, Sergy Yu

    2013-06-14

    The absorption spectrum of CO2 in the wavelength range 120-160 nm is analyzed by means of quantum mechanical calculations performed using vibronically coupled potential energy surfaces of five singlet valence electronic states and the coordinate dependent transition dipole moment vectors. The thermally averaged spectrum, calculated for T = 190 K via Boltzmann averaging of optical transitions from many initial rotational states, accurately reproduces the experimental spectral envelope, consisting of a low and a high energy band, the positions of the absorption maxima, their FWHMs, peak intensities, and frequencies of diffuse structures in each band. Contributions of the vibronic interactions due to Renner-Teller coupling, conical intersections, and the Herzberg-Teller effect are isolated and the calculated bands are assigned in terms of adiabatic electronic states. Finally, diffuse structures in the calculated bands are vibronically assigned using wave functions of the underlying resonance states. It is demonstrated that the main progressions in the high energy band correspond to consecutive excitations of the pseudorotational motion along the closed loop of the CI seam, and progressions differ in the number of nodes along the radial mode perpendicular to the closed seam. Irregularity of the diffuse peaks in the low energy band is interpreted as a manifestation of the carbene-type "cyclic" OCO minimum.

  1. Strongly nonparabolic variation of the band gap in In x Al1-x N with low indium content

    NASA Astrophysics Data System (ADS)

    Zubialevich, Vitaly Z.; Dinh, Duc V.; Alam, Shahab N.; Schulz, Stefan; O'Reilly, Eoin P.; Parbrook, Peter J.

    2016-02-01

    80-120 nm thick In x Al1-x N epitaxial layers with 0 < x < 0.224 were grown by metalorganic vapour phase epitaxy on AlN/Al2O3-templates. The composition was varied through control of the growth temperature. The composition dependence of the band gap was estimated from the photoluminescence excitation absorption edge for 0 < x < 0.11 as the material with higher In content showed no luminescence under low excitation. A very rapid decrease in band gap was observed in this range, dropping down below 5.2 eV at x = 0.05, confirming previous theoretical work that used a band-anticrossing model to describe the strongly x-dependent bowing parameter, which in this case exceeds 25 eV in the x → 0 limit. A double absorption edge observed for InAlN with x < 0.01 was attributed to crystal-field splitting of the highest valence band states. Our results indicate also that the ordering of the valence bands is changed at much lower In contents than one would expect from linear interpolation of the valence band parameters. These findings on band gap bowing and valence band ordering are of direct relevance for the design of InAlN-containing optoelectronic devices.

  2. The excited spin state of Comet 2P/Encke

    NASA Astrophysics Data System (ADS)

    Belton, Michael J. S.; Samarasinha, Nalin H.; Fernández, Yan R.; Meech, Karen J.

    2005-05-01

    Ways to rationalize the different periods (e.g., 15.08 h, Luu and Jewitt, 1990, Icarus 86, 69-81; 11.01 h, Fernández et al., 2004, Icarus, in this issue; Lowry et al., 2003, Lunar Planet. Sci. XXXIV, Abstract 2056) seen in near aphelion R-band light curves of Comet 2P/Encke are explored. We show that the comet is usually active at aphelion and it's observed light curves contain signal from both the nucleus and an unresolved coma. The coma contribution to the observed brightness is generally found to dominate with the nucleus providing from 28 to 87% of the total brightness. The amplitude of the observed variations cannot be explained by the nucleus alone and are due to coma activity. We show that some seven periodicities exist in the observed light curves at various times and that this is likely the result of an active nucleus spinning in an excited spin state. The changing periodicities are probably due to changes in the relative strengths of the active areas. We work out possible excited states based on experience with model light curves and by using an analogy to light curve observations of Comet 1P/Halley for which the spin state has been separately determined from spacecraft observations. There is a possibility of a fully relaxed principal axis spin state (0.538 d -1; P=44.6 h) but, because it provides a poorer fit to the observed periodicities than the best fit excited state together with the absence of a peak near 1.08 d -1 ( 2f) in the frequency spectrum of the Fernández et al. (2000, Icarus 147, 145-160) thermal IR lightcurve, we consider it unlikely. Both SAM and LAM excited states are allowed by the underlying periodicities and additional information is needed to choose between these. Our choice of a low excitation SAM state, i.e., one in which the instantaneous spin axis nutates around the total angular momentum vector in a motion that is characterized by limited angular oscillations around the long axis, is based on Sekanina's (1988, Astron J. 95

  3. Chromosome 2 (2p16) abnormalities in Carney complex tumours

    PubMed Central

    Matyakhina, L; Pack, S; Kirschner, L; Pak, E; Mannan, P; Jaikumar, J; Taymans, S; Sandrini, F; Carney, J; Stratakis, C

    2003-01-01

    Carney complex (CNC) is an autosomal dominant multiple endocrine neoplasia and lentiginosis syndrome characterised by spotty skin pigmentation, cardiac, skin, and breast myxomas, and a variety of endocrine and other tumours. The disease is genetically heterogeneous; two loci have been mapped to chromosomes 17q22–24 (the CNC1 locus) and 2p16 (CNC2). Mutations in the PRKAR1A tumour suppressor gene were recently found in CNC1 mapping kindreds, while the CNC2 and perhaps other genes remain unidentified. Analysis of tumour chromosome rearrangements is a useful tool for uncovering genes with a role in tumorigenesis and/or tumour progression. CGH analysis showed a low level 2p amplification recurrently in four of eight CNC tumours; one tumour showed specific amplification of the 2p16-p23 region only. To define more precisely the 2p amplicon in these and other tumours, we completed the genomic mapping of the CNC2 region, and analysed 46 tumour samples from CNC patients with and without PRKAR1A mutations by fluorescence in situ hybridisation (FISH) using bacterial artificial chromosomes (BACs). Consistent cytogenetic changes of the region were detected in 40 (87%) of the samples analysed. Twenty-four samples (60%) showed amplification of the region represented as homogeneously stained regions (HSRs). The size of the amplicon varied from case to case, and frequently from cell to cell in the same tumour. Three tumours (8%) showed both amplification and deletion of the region in their cells. Thirteen tumours (32%) showed deletions only. These molecular cytogenetic changes included the region that is covered by BACs 400-P-14 and 514-O-11 and, in the genetic map, corresponds to an area flanked by polymorphic markers D2S2251 and D2S2292; other BACs on the centromeric and telomeric end of this region were included in varying degrees. We conclude that cytogenetic changes of the 2p16 chromosomal region that harbours the CNC2 locus are frequently observed in tumours from CNC

  4. Band-engineered CaTiO3 nanowires for visible light photocatalysis

    NASA Astrophysics Data System (ADS)

    Fu, Q.; Li, J. L.; He, T.; Yang, G. W.

    2013-03-01

    We have theoretically investigated the structural, electronic, and optical properties of the perovskite CaTiO3 nanowires for visible light photocatalytic applications using pseudopotential density-functional theory calculations. The electronic structure calculations show that the band gap is greatly modified in the CaTiO3 nanowires compared with that of the bulk. For the TiO2-terminated nanowires, the electronic states on the valence band maxima induced by combining oxygen and calcium atoms on the surface lead to a shift in the valence band toward the conduction band without interference from the edge of the conduction band, which reduces the band gap. On the contrary, the electronic states induced by combining oxygen and calcium atoms on the surface of the CaO-terminated nanowires lead to a shift in the conduction band toward the valence band. The calculated optical results indicate that the absorption edge of the nanowires shifts towards the red-light region. These theoretical results suggest that the perovskite CaTiO3 nanowires are promising candidates for visible light photocatalysis such as solar-assisted water splitting reactions.

  5. Europium mixed-valence, long-range magnetic order, and dynamic magnetic response in EuCu2(SixGe1 -x)2

    NASA Astrophysics Data System (ADS)

    Nemkovski, K. S.; Kozlenko, D. P.; Alekseev, P. A.; Mignot, J.-M.; Menushenkov, A. P.; Yaroslavtsev, A. A.; Clementyev, E. S.; Ivanov, A. S.; Rols, S.; Klobes, B.; Hermann, R. P.; Gribanov, A. V.

    2016-11-01

    In mixed-valence or heavy-fermion systems, the hybridization between local f orbitals and conduction band states can cause the suppression of long-range magnetic order, which competes with strong spin fluctuations. Ce- and Yb-based systems have been found to exhibit fascinating physical properties (heavy-fermion superconductivity, non-Fermi-liquid states, etc.) when tuned to the vicinity of magnetic quantum critical points by use of various external control parameters (temperature, magnetic field, chemical composition). Recently, similar effects (mixed-valence, Kondo fluctuations, heavy Fermi liquid) have been reported to exist in some Eu-based compounds. Unlike Ce (Yb), Eu has a multiple electron (hole) occupancy of its 4 f shell, and the magnetic Eu2 + state (4 f7 ) has no orbital component in the usual L S coupling scheme, which can lead to a quite different and interesting physics. In the EuCu2(SixGe1 -x)2 series, where the valence can be tuned by varying the Si/Ge ratio, it has been reported that a significant valence fluctuation can exist even in the magnetic order regime. This paper presents a detailed study of the latter material using different microscopic probes (XANES, Mössbauer spectroscopy, elastic and inelastic neutron scattering), in which the composition dependence of the magnetic order and dynamics across the series is traced back to the change in the Eu valence state. In particular, the results support the persistence of valence fluctuations into the antiferromagnetic state over a sizable composition range below the critical Si concentration xc≈0.65 . The sequence of magnetic ground states in the series is shown to reflect the evolution of the magnetic spectral response.

  6. Europium mixed-valence, long-range magnetic order, and dynamic magnetic response in EuCu2(SixGe1-x)2

    DOE PAGES

    Nemkovski, Krill S.; Kozlenko, D. P.; Alekseev, Pavel A.; ...

    2016-11-01

    In mixed-valence or heavy-fermion systems, the hybridization between local f orbitals and conduction band states can cause the suppression of long-range magnetic order, which competes with strong spin uctuations. Ce- and Yb-based systems have been found to exhibit fascinating physical properties (heavy-fermion superconductivity, non-Fermi-liquid states, etc.) when tuned to the vicinity of magnetic quantum critical points by use of various external control parameters (temperature, magnetic eld, chemical composition). Recently, similar effects (mixed-valence, Kondo uctuations, heavy Fermi liquid) have been reported to exist in some Eu-based compounds. Unlike Ce (Yb), Eu has a multiple electron (hole) occupancy of its 4f shell,more » and the magnetic Eu2+ state (4f7) has no orbital component in the usual LS coupling scheme, which can lead to a quite different and interesting physics. In the EuCu2(SixGe1-x)2 series, where the valence can be tuned by varying the Si/Ge ratio, it has been reported that a significant valence uctuation can exist even in the magnetic order regime. This paper presents a detailed study of the latter material using different microscopic probes (XANES, Mossbauer spectroscopy, elastic and inelastic neutron scattering), in which the composition dependence of the magnetic order and dynamics across the series is traced back to the change in the Eu valence state. In particular, the results support the persistence of valence uctuations into the antiferromagnetic state over a sizable composition range below the critical Si concentration xc ≈ 0:65. In conclusion, the sequence of magnetic ground states in the series is shown to re ect the evolution of the magnetic spectral response.« less

  7. Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

    2001-01-01

    Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(sub x)V(sub 1-x) alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(sub x)V(sub 1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(sub x)Te(sub 1-x) and ZnSe(sub y)Te(sub 1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(sub y)Te(sub 1-y) alloys in the entire composition range, y between 0 and 1. The samples used in this study are bulk ZnSe(sub y)Te(sub 1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the

  8. Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Ramdas, A.; Su, Ching-Hua; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between

  9. Universal edge bands induced by linearly polarized irradiation on phosphorene

    NASA Astrophysics Data System (ADS)

    Yang, Mou; Zhang, Wen-Lian; Cai, Zhi-Jun; Wang, Rui-Qiang; Bai, Yan-Kui

    2017-01-01

    Phosphorene (a monolayer of black phosphorus) is a large gap semiconductor with high mobility and has great application potential. Numerical calculations reveal that phosphorene is a topologically trivial material and can only host edge bands on specified edges such as the zigzag edge. A linearly polarized irradiation on the phosphorene lattice results in the dynamic gaps in the quasi-energy spectrum. We found that the irradiation polarized in the zigzag direction induces new edge bands within the dynamic gaps on any type of edge (zigzag, armchair, or other bearded edge). We proposed a new gauge independent quantity, δ +g, to account for the appearence of universal edge bands, where δ is the detune and g is the light induced valence-conduction band transition element. The number of edge bands in the dynamic gaps is reflected by the winding number of it.

  10. Unfolding the band structure of GaAsBi

    NASA Astrophysics Data System (ADS)

    Maspero, R.; Sweeney, S. J.; Florescu, Marian

    2017-02-01

    Typical supercell approaches used to investigate the electronic properties of GaAs(1-x)Bi(x) produce highly accurate, but folded, band structures. Using a highly optimized algorithm, we unfold the band structure to an approximate E≤ft(\\mathbf{k}\\right) relation associated with an effective Brillouin zone. The dispersion relations we generate correlate strongly with experimental results, confirming that a regime of band gap energy greater than the spin-orbit-splitting energy is reached at around 10% bismuth fraction. We also demonstrate the effectiveness of the unfolding algorithm throughout the Brillouin zone (BZ), which is key to enabling transition rate calculations, such as Auger recombination rates. Finally, we show the effect of disorder on the effective masses and identify approximate values for the effective mass of the conduction band and valence bands for bismuth concentrations from 0-12%.

  11. Reinterpretation of the bond-valence model with bond-order formalism: An improved bond-valence-based interatomic potential for PbTiO3

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Grinberg, Ilya; Takenaka, Hiroyuki; Rappe, Andrew M.

    2013-09-01

    We present a modified bond-valence model of PbTiO3 based on the principles of bond-valence and bond-valence vector conservation. The relationship between the bond-valence model and the bond-order potential is derived analytically in the framework of a tight-binding model. An energy term, bond-valence vector energy, is introduced into the atomistic model and the potential parameters are reoptimized. This model potential can be applied both to canonical-ensemble (NVT) and isobaric-isothermal ensemble (NPT) molecular dynamics (MD) simulations. This model reproduces the experimental phase transition in NVT MD simulations and also exhibits the experimental sequence of temperature-driven and pressure-driven phase transitions in NPT simulations. We expect that this improved bond-valence model can be applied to a broad range of inorganic materials.

  12. Work Valence as a Predictor of Academic Achievement in the Family Context

    ERIC Educational Resources Information Center

    Porfeli, Erik; Ferrari, Lea; Nota, Laura

    2013-01-01

    This study asserts a theoretical model of academic and work socialization within the family setting. The presumed associations between parents' work valences, children's work valences and valence perceptions, and children's academic interest and achievement are tested. The results suggest that children's perceptions of parents mediate the…

  13. Developmental Reversals in False Memory: Effects of Emotional Valence and Arousal

    ERIC Educational Resources Information Center

    Brainerd, C. J.; Holliday, R. E.; Reyna, V. F.; Yang, Y.; Toglia, M. P.

    2010-01-01

    Do the emotional valence and arousal of events distort children's memories? Do valence and arousal modulate counterintuitive age increases in false memory? We investigated those questions in children, adolescents, and adults using the Cornell/Cortland Emotion Lists, a word list pool that induces false memories and in which valence and arousal can…

  14. Supporting seamless mobility for P2P live streaming.

    PubMed

    Kim, Eunsam; Kim, Sangjin; Lee, Choonhwa

    2014-01-01

    With advent of various mobile devices with powerful networking and computing capabilities, the users' demand to enjoy live video streaming services such as IPTV with mobile devices has been increasing rapidly. However, it is challenging to get over the degradation of service quality due to data loss caused by the handover. Although many handover schemes were proposed at protocol layers below the application layer, they inherently suffer from data loss while the network is being disconnected during the handover. We therefore propose an efficient application-layer handover scheme to support seamless mobility for P2P live streaming. By simulation experiments, we show that the P2P live streaming system with our proposed handover scheme can improve the playback continuity significantly compared to that without our scheme.

  15. Supporting Seamless Mobility for P2P Live Streaming

    PubMed Central

    Kim, Eunsam; Kim, Sangjin; Lee, Choonhwa

    2014-01-01

    With advent of various mobile devices with powerful networking and computing capabilities, the users' demand to enjoy live video streaming services such as IPTV with mobile devices has been increasing rapidly. However, it is challenging to get over the degradation of service quality due to data loss caused by the handover. Although many handover schemes were proposed at protocol layers below the application layer, they inherently suffer from data loss while the network is being disconnected during the handover. We therefore propose an efficient application-layer handover scheme to support seamless mobility for P2P live streaming. By simulation experiments, we show that the P2P live streaming system with our proposed handover scheme can improve the playback continuity significantly compared to that without our scheme. PMID:24977171

  16. K2P Potassium Channels, Mysterious and Paradoxically Exciting

    PubMed Central

    Goldstein, Steve A. N.

    2013-01-01

    New evidence reveals that the common electrolyte disorder hypokalemia can induce K2P1 channels that are normally selective for K+ to break the rules and conduct Na+. This defiant behavior leads to paradoxical depolarization of many cells in the heart, increasing the risk for lethal arrhythmia. The new research resolves a mystery uncovered 50 years ago and bestows an array of new riddles. Here, I discuss how K2P1 might achieve this alchemy—through stable residence of the K+ selectivity filter in a Na+-conductive state between its open and C-inactive configurations—and predict that other K+ channels and environmental stimuli will be discovered to produce the same excitatory misconduct. PMID:21868351

  17. Fine Structure of the Upsilon 2p States.

    NASA Astrophysics Data System (ADS)

    Lovelock, Dale Michael John

    1990-01-01

    The Columbia-Stony Brook (CUSB) collaboration has measured the photon spectrum resulting from the decays Upsilon (3S)togamma + hadrons using the CUSB-II BGO calorimeter. The spectrum contains the signal from the electromagnetic transitions Upsilon (3S)togammachi _{b,J=0,1,2} (2P). From this signal the masses of the chi_{b}(2P) states were determined to be 10268.0 +/- 0.8, 10255.4 +/- 0.8, and 10233.9 +/- 1.2 MeV for the J = 2, 1, and 0 states respectively. The ratio of the mass splittings, (M_{chi _{b2}} - M_{chi_{b1}} )/(M_{chi_{b1 }} - M_ {chi_{b0}}) imply that the long range confining piece of the inter-quark potential transforms as a Lorentz scalar.

  18. Increasing efficiency in intermediate band solar cells with overlapping absorptions

    NASA Astrophysics Data System (ADS)

    Krishna, Akshay; Krich, Jacob J.

    2016-07-01

    Intermediate band (IB) materials are promising candidates for realizing high efficiency solar cells. In IB photovoltaics, photons are absorbed in one of three possible electronic transitions—valence to conduction band, valence to intermediate band, or intermediate to conduction band. With fully concentrated sunlight, when the band gaps have been chosen appropriately, the highest efficiency IB solar cells require that these three absorptions be non-overlapping, so absorbed photons of fixed energy contribute to only one transition. The realistic case of overlapping absorptions, where the transitions compete for photons, is generally considered to be a source of loss. We show that overlapping absorptions can in fact lead to significant improvements in IB solar cell efficiencies, especially for IB that are near the middle of the band gap. At low to moderate concentration, the highest efficiency requires overlapping absorptions. We use the detailed-balance method and indicate how much overlap of the absorptions is required to achieve efficiency improvements, comparing with some known cases. These results substantially broaden the set of materials that can be suitable for high-efficiency IB solar cells.

  19. Band gap engineering via doping: A predictive approach

    NASA Astrophysics Data System (ADS)

    Andriotis, Antonis N.; Menon, Madhu

    2015-03-01

    We employ an extension of Harrison's theory at the tight binding level of approximation to develop a predictive approach for band gap engineering involving isovalent doping of wide band gap semiconductors. Our results indicate that reasonably accurate predictions can be achieved at qualitative as well as quantitative levels. The predictive results were checked against ab initio ones obtained at the level of DFT/SGGA + U approximation. The minor disagreements between predicted and ab initio results can be attributed to the electronic processes not incorporated in Harrison's theory. These include processes such as the conduction band anticrossing [Shan et al., Phys. Rev. Lett. 82, 1221 (1999); Walukiewicz et al., Phys. Rev. Lett. 85, 1552 (2000)] and valence band anticrossing [Alberi et al., Phys. Rev. B 77, 073202 (2008); Appl. Phys. Lett. 92, 162105 (2008); Appl. Phys. Lett. 91, 051909 (2007); Phys. Rev. B 75, 045203 (2007)], as well as the multiorbital rehybridization. Another cause of disagreement between the results of our predictive approach and the ab initio ones is shown to be the result of the shift of Fermi energy within the impurity band formed at the edge of the valence band maximum due to rehybridization. The validity of our approach is demonstrated with example applications for the systems GaN1-xSbx, GaP1-xSbx, AlSb1-xPx, AlP1-xSbx, and InP1-xSbx.

  20. Aquatic Toxicity of Decontaminating Solutions DS-2/DS-2P

    DTIC Science & Technology

    1994-09-01

    Daphnia magna , fathead minnow, Photobacteriumphosphoreum, and earthworm, 14 SUBJECT TERMS 15, NUMBER OF PAGES Aquatic toxicology Ea.thworm 16 . Daphnia magna ...toxicity of the DS-2 and DS-2P mixtures on Daphnia magna , (water flea), Pimephales promelas (fathead minnow), Eisenia foetida (earthwonm) and...chloroform procedures 151 and proved to be within specifications. 2.1 Dapbnia Assays The Daphnia magna were obtained from Dr. Freida Taub [61 at the

  1. Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell.

    PubMed

    Martí, A; Antolín, E; Stanley, C R; Farmer, C D; López, N; Díaz, P; Cánovas, E; Linares, P G; Luque, A

    2006-12-15

    We present intermediate-band solar cells manufactured using quantum dot technology that show for the first time the production of photocurrent when two sub-band-gap energy photons are absorbed simultaneously. One photon produces an optical transition from the intermediate-band to the conduction band while the second pumps an electron from the valence band to the intermediate-band. The detection of this two-photon absorption process is essential to verify the principles of operation of the intermediate-band solar cell. The phenomenon is the cornerstone physical principle that ultimately allows the production of photocurrent in a solar cell by below band gap photon absorption, without degradation of its output voltage.

  2. Load Balancing in Structured P2P Networks

    NASA Astrophysics Data System (ADS)

    Zhu, Yingwu

    In this chapter we start by addressing the importance and necessity of load balancing in structured P2P networks, due to three main reasons. First, structured P2P networks assume uniform peer capacities while peer capacities are heterogeneous in deployed P2P networks. Second, resorting to pseudo-uniformity of the hash function used to generate node IDs and data item keys leads to imbalanced overlay address space and item distribution. Lastly, placement of data items cannot be randomized in some applications (e.g., range searching). We then present an overview of load aggregation and dissemination techniques that are required by many load balancing algorithms. Two techniques are discussed including tree structure-based approach and gossip-based approach. They make different tradeoffs between estimate/aggregate accuracy and failure resilience. To address the issue of load imbalance, three main solutions are described: virtual server-based approach, power of two choices, and address-space and item balancing. While different in their designs, they all aim to improve balance on the address space and data item distribution. As a case study, the chapter discusses a virtual server-based load balancing algorithm that strives to ensure fair load distribution among nodes and minimize load balancing cost in bandwidth. Finally, the chapter concludes with future research and a summary.

  3. Uniform Sampling for Directed P2P Networks

    NASA Astrophysics Data System (ADS)

    Hall, Cyrus; Carzaniga, Antonio

    Selecting a random peer with uniform probability across a peer-to-peer (P2P) network is a fundamental function for unstructured search, data replication, and monitoring algorithms. Such uniform sampling is supported by several techniques. However, current techniques suffer from sample bias and limited applicability. In this paper, we present a sampling algorithm that achieves a desired uniformity while making essentially no assumptions about the underlying P2P network. This algorithm, called doubly stochastic converge (DSC), iteratively adjusts the probabilities of crossing each link in the network during a random walk, such that the resulting transition matrix is doubly stochastic. DSC is fully decentralized and is designed to work on both directed and undirected topologies, making it suitable for virtually any P2P network. Our simulations show that DSC converges quickly on a wide variety of topologies, and that the random walks needed for sampling are short for most topologies. In simulation studies with FreePastry, we show that DSC is resilient to high levels of churn, while incurring a minimal sample bias.

  4. Pure P2P mediation system: A mappings discovery approach

    NASA Astrophysics Data System (ADS)

    selma, El yahyaoui El idrissi; Zellou, Ahmed; Idri, Ali

    2015-02-01

    The information integration systems consist in offering a uniform interface to provide access to a set of autonomous and distributed information sources. The most important advantage of this system is that it allows users to specify what they want, rather than thinking about how to get the responses. The works realized in this area have particular leads to two major classes of integration systems: the mediation systems based on the paradigm mediator / adapter and peer to peer systems (P2P). The combination of both systems has led to a third type; is the mediation P2P systems. The P2P systems are large-scale systems, self-organized and distributed. They allow the resource management in a completely decentralized way. However, the integration of structured information sources, heterogeneous and distributed proves to be a complex problem. The objective of this work is to propose an approach to resolve conflicts and establish a mapping between the heterogeneous elements. This approach is based on clustering; the latter is to group similar Peers that share common information in the same subnet. Thus, to facilitate the heterogeneity, we introduced three additional layers of our hierarchy of peers: internal schema, external schema and Schema directory peer. We used linguistic techniques, and precisely the name correspondence technique, that is based on the similarity of names to propose a correspondence.

  5. An Overlapping Structured P2P for REIK Overlay Network

    NASA Astrophysics Data System (ADS)

    Liu, Wenjun; Song, Jingjing; Yu, Jiguo

    REIK is based on a ring which embedded an inverse Kautz digraph, to enable multi-path P2P routing. It has the constant degree and the logarithmic diameter DHT scheme with constant congestion and Byzantine fault tolerance. However, REIK did not consider the interconnection of many independent smaller networks. In this paper, we propose a new approach to build overlay network, OLS-REIK which is an overlapping structured P2P for REIK overlay network. It is a more flexible interconnecting different REIK network. Peers can belong to several rings, allowing this interconnection. By connecting smaller structured overlay networks in an unstructured way, it provides a cost effective alternative to hierarchical structured P2P systems requiring costly merging. Routing of lookup messages is performed as in REIK within one ring, but a peer belonging to several rings forwards the request to the different rings it belongs to. Furthermore a small number of across point is enough to ensure a high exhaustiveness level.

  6. DNA Compaction by Yeast Mitochondrial Protein ABF2p

    SciTech Connect

    Friddle, R W; Klare, J E; Noy, A; Corzett, M; Balhorn, R; Baskin, R J; Martin, S S; Baldwin, E P

    2003-05-09

    We used high resolution Atomic Force Microscopy (AFM) to image compaction of linear and circular DNA by the yeast mitochondrial protein ABF2p , which plays a major role in maintaining mitochondrial DNA. AFM images show that protein binding induces drastic bends in the DNA backbone for both linear and circular DNA. At high concentration of ABF2p DNA collapses into a tight globular structure. We quantified the compaction of linear DNA by measuring the end-to-end distance of the DNA molecule at increasing concentrations of ABF2p. We also derived a polymer statistical mechanics model that gives quantitative description of compaction observed in our experiments. This model shows that a number of sharp bends in the DNA backbone is often sufficient to cause DNA compaction. Comparison of our model with the experimental data showed excellent quantitative correlation and allowed us to determine binding characteristics for ABF2. Our studies indicate that ABF2 compacts DNA through a novel mechanism that involves bending of DNA backbone. We discuss the implications of such a mechanism for mitochondrial DNA maintenance.

  7. The mechano-gated K(2P) channel TREK-1.

    PubMed

    Dedman, Alexandra; Sharif-Naeini, Reza; Folgering, Joost H A; Duprat, Fabrice; Patel, Amanda; Honoré, Eric

    2009-03-01

    The versatility of neuronal electrical activity is largely conditioned by the expression of different structural and functional classes of K+ channels. More than 80 genes encoding the main K+ channel alpha subunits have been identified in the human genome. Alternative splicing, heteromultimeric assembly, post-translational modification and interaction with auxiliary regulatory subunits further increase the molecular and functional diversity of K+ channels. Mammalian two-pore domain K+ channels (K(2P)) make up one class of K+ channels along with the inward rectifiers and the voltage- and/or calcium-dependent K+ channels. Each K(2P) channel subunit is made up of four transmembrane segments and two pore-forming (P) domains, which are arranged in tandem and function as either homo- or heterodimeric channels. This novel structural arrangement is associated with unusual gating properties including "background" or "leak" K+ channel activity, in which the channels show constitutive activity at rest. In this review article, we will focus on the lipid-sensitive mechano-gated K(2P) channel TREK-1 and will emphasize on the polymodal function of this "unconventional" K+ channel.

  8. Tunable bands in biased multilayer epitaxial graphene.

    PubMed

    Williams, Michael D; Samarakoon, Duminda K; Hess, Dennis W; Wang, Xiao-Qian

    2012-04-28

    We have studied the electronic characteristics of multilayer epitaxial graphene under a perpendicularly applied electric bias. Ultraviolet photoemission spectroscopy measurements reveal that there is notable variation of the electronic density-of-states in valence bands near the Fermi level. Evolution of the electronic structure of graphite and rotational-stacked multilayer epitaxial graphene as a function of the applied electric bias is investigated using first-principles density-functional theory including interlayer van der Waals interactions. The experimental and theoretical results demonstrate that the tailoring of electronic band structure correlates with the interlayer coupling tuned by the applied bias. The implications of controllable electronic structure of rotationally fault-stacked epitaxial graphene grown on the C-face of SiC for future device applications are discussed.

  9. Valence, Implicated Actor, and Children's Acquiescence to False Suggestions.

    PubMed

    Cleveland, Kyndra C; Quas, Jodi A; Lyon, Thomas D

    2016-01-01

    Although adverse effects of suggestive interviewing on children's accuracy are well documented, it remains unclear as to whether these effects vary depending on the valence of and the actor implicated in suggestions. In this study, 124 3-8-year-olds participated in a classroom activity and were later questioned about positive and negative false details. The interviewer provided positive reinforcement when children acquiesced to suggestions and negative feedback when they did not. Following reinforcement or feedback, young children were comparably suggestible for positive and negative details. With age, resistance to suggestions about negative details emerged first, followed by resistance to suggestions about positive details. Across age, more negative feedback was required to induce acquiescence to negative than positive false details. Finally, children were less willing to acquiesce when they (versus the confederate) were implicated. Findings highlight the interactive effects of valence and children's age on their eyewitness performance in suggestive contexts.

  10. Verbal pragmatics following unilateral stroke: emotional content and valence.

    PubMed

    Borod, J C; Rorie, K D; Pick, L H; Bloom, R L; Andelman, F; Campbell, A L; Obler, L K; Tweedy, J R; Welkowitz, J; Sliwinski, M

    2000-01-01

    Verbal pragmatic aspects of discourse production were examined in 16 right brain-damaged (RBD), 16 left brain-damaged (LBD), and 16 normal control right-handed adults. The facilitation effect of emotional content, valence hypothesis, and relationship between pragmatics and emotion were evaluated. Participants produced monologues while recollecting emotional and nonemotional experiences. Transcribed monologues were rated for appropriateness on 6 pragmatic features: conciseness, lexical selection, quantity, relevancy, specificity, and topic maintenance. Overall, brain-damaged groups were rated as significantly less appropriate than normals. Consistent with the facilitation effect, emotional content enhanced pragmatic performance of LBD aphasic participants yet suppressed performance of RBD participants. Contrary to the valence hypothesis, RBD participants were more impaired for positive emotions and LBD participants for negative emotions. Pragmatic appropriateness was not strongly correlated with a measure of emotional intensity.

  11. Valence space techniques and QRPA vibrational mass parameters

    NASA Astrophysics Data System (ADS)

    Deloncle, I.; Lechaftois, F.; Péru, S.

    2016-06-01

    The vibrational mass parameters entering the quadrupolar 5DCH Hamiltonian are commonly obtained neglecting beyond mean-field correlations and the dynamical mean-field rearrangement. The Quasiparticle Random Phase Approximation (QRPA) framework would allow to avoid these disadvantages [1], if the computation time, when using density dependent force, was not prohibitive. Here, a significant time reduction is obtained by applying valence space (VS) techniques (energy cut-off and inert core) in QRPA calculations. The VS techniques allow to probe the physical content of the mass parameter. The QRPA mass parameter exhibit robustness toward VS limitations contrarily to the intrinsic QRPA outputs, that show deceptive appearance when an inert core is used. Excited states energy, and associated transition probabilities, should not be considered for optimizing the valence space limits.

  12. Mapping odor valence in the brain of flies and mice.

    PubMed

    Knaden, Markus; Hansson, Bill S

    2014-02-01

    Why are some odors perceived as pleasant while others are not? We review current research on how pleasant and unpleasant odors, that is, odors with positive or negative valence, are processed in the brain of flies and mice. We conclude that in mice pleasant and unpleasant odors are detected via three olfactory subsystems with only one being fully dedicated to unpleasant odors, while the others detect both good and bad odors. Correspondingly, so far no clear segmentation into regions processing exclusively pleasant or unpleasant odors has been identified in the mouse brain. The situation is different in flies, where most odors are sensed via the antenna. Already at the antennal lobe level, that is, the first processing center for olfactory input, odorants seem to be categorized as pleasant or unpleasant. We furthermore discuss why animals at all should make a decision based on olfaction, and why a straightforward and fast processing of odorant valence might be important for survival and reproduction.

  13. Emotional valence and arousal interact in attentional control.

    PubMed

    Jefferies, Lisa N; Smilek, Daniel; Eich, Eric; Enns, James T

    2008-03-01

    A recent study demonstrated that observers' ability to identify targets in a rapid visual sequence was enhanced when they simultaneously listened to happy music. In the study reported here, we examined how the emotion-attention relationship is influenced by changes in both mood valence (negative vs. positive) and arousal (low vs. high). We used a standard induction procedure to generate calm, happy, sad, and anxious moods in participants. Results for an attentional blink task showed no differences in first-target accuracy, but second-target accuracy was highest for participants with low arousal and negative affect (sad), lowest for those with strong arousal and negative affect (anxious), and intermediate for those with positive affect regardless of their arousal (calm, happy). We discuss implications of this valence-arousal interaction for the control of visual attention.

  14. Yb3+ borate laser glasses containing high-valency cations

    NASA Astrophysics Data System (ADS)

    Izumitani, Tetsuro; Hu, Lili; Dai, Shixun; Jiang, Zhonghong

    1999-07-01

    A new kind of Yb3+ borate laser glass containing high valency cations was reported in this work. B2O3-ZnO and B2O3-BaO glasses were chosen as the base glasses of Yb$3+)-BaO glasses were chosen as the base glasses of Yb3+ ions. Yb3+ ion has a large integrated absorption area in the former and longer fluorescent lifetime in the latter. The effect of Al3+, La3+, Ti3+, Zr4+, Nb4+ Ta5+, W6+ high valency cations on the absorption and fluorescent behaviors of Ba2O3-ZnO- RmOn-Yb2O3 and B2O3-BaO-RmOn-Yb2O3 glasses was examined. Some Yb3+ borate laser glasses with high cross section for stimulated emissions, good stability, good stability against devitrification and lower non-linear refractive index were presented.

  15. Covert face recognition relies on affective valence in congenital prosopagnosia.

    PubMed

    Bate, Sarah; Haslam, Catherine; Jansari, Ashok; Hodgson, Timothy L

    2009-06-01

    Dominant accounts of covert recognition in prosopagnosia assume subthreshold activation of face representations created prior to onset of the disorder. Yet, such accounts cannot explain covert recognition in congenital prosopagnosia, where the impairment is present from birth. Alternatively, covert recognition may rely on affective valence, yet no study has explored this possibility. The current study addressed this issue in 3 individuals with congenital prosopagnosia, using measures of the scanpath to indicate recognition. Participants were asked to memorize 30 faces paired with descriptions of aggressive, nice, or neutral behaviours. In a later recognition test, eye movements were monitored while participants discriminated studied from novel faces. Sampling was reduced for studied--nice compared to studied--aggressive faces, and performance for studied--neutral and novel faces fell between these two conditions. This pattern of findings suggests that (a) positive emotion can facilitate processing in prosopagnosia, and (b) covert recognition may rely on emotional valence rather than familiarity.

  16. Highly Mismatched Alloys for Intermediate Band Solar Cells

    SciTech Connect

    Walukiewicz, W.; Yu, K.M.; Wu, J.; Ager III, J.W.; Shan, W.; Scrapulla, M.A.; Dubon, O.D.; Becla, P.

    2005-03-21

    It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.

  17. Feedback valence affects auditory perceptual learning independently of feedback probability.

    PubMed

    Amitay, Sygal; Moore, David R; Molloy, Katharine; Halliday, Lorna F

    2015-01-01

    Previous studies have suggested that negative feedback is more effective in driving learning than positive feedback. We investigated the effect on learning of providing varying amounts of negative and positive feedback while listeners attempted to discriminate between three identical tones; an impossible task that nevertheless produces robust learning. Four feedback conditions were compared during training: 90% positive feedback or 10% negative feedback informed the participants that they were doing equally well, while 10% positive or 90% negative feedback informed them they were doing equally badly. In all conditions the feedback was random in relation to the listeners' responses (because the task was to discriminate three identical tones), yet both the valence (negative vs. positive) and the probability of feedback (10% vs. 90%) affected learning. Feedback that informed listeners they were doing badly resulted in better post-training performance than feedback that informed them they were doing well, independent of valence. In addition, positive feedback during training resulted in better post-training performance than negative feedback, but only positive feedback indicating listeners were doing badly on the task resulted in learning. As we have previously speculated, feedback that better reflected the difficulty of the task was more effective in driving learning than feedback that suggested performance was better than it should have been given perceived task difficulty. But contrary to expectations, positive feedback was more effective than negative feedback in driving learning. Feedback thus had two separable effects on learning: feedback valence affected motivation on a subjectively difficult task, and learning occurred only when feedback probability reflected the subjective difficulty. To optimize learning, training programs need to take into consideration both feedback valence and probability.

  18. Mapping of valence energy losses via energy-filtered annular dark-field scanning transmission electron microscopy.

    PubMed

    Gu, Lin; Sigle, Wilfried; Koch, Christoph T; Nelayah, Jaysen; Srot, Vesna; van Aken, Peter A

    2009-08-01

    The advent of electron monochromators has opened new perspectives on electron energy-loss spectroscopy at low energy losses, including phenomena such as surface plasmon resonances or electron transitions from the valence to the conduction band. In this paper, we report first results making use of the combination of an energy filter and a post-filter annular dark-field detector. This instrumental design allows us to obtain energy-filtered (i.e. inelastic) annular dark-field images in scanning transmission electron microscopy of the 2-dimensional semiconductor band-gap distribution of a GaN/Al(45)Ga(55)N structure and of surface plasmon resonances of silver nanoprisms. In comparison to other approaches, the technique is less prone to inelastic delocalization and relativistic artefacts. The mixed contribution of elastic and inelastic contrast is discussed.

  19. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  20. Chromium valences in ureilite olivine and implications for ureilite petrogenesis

    NASA Astrophysics Data System (ADS)

    Goodrich, C. A.; Sutton, S. R.; Wirick, S.; Jercinovic, M. J.

    2013-12-01

    Ureilites are a group of ultramafic achondrites commonly thought to be residues of partial melting on a carbon-rich asteroid. They show a large variation in FeO content (olivine Fo values ranging from ∼74 to 95) that cannot be due to igneous fractionation and suggests instead variation in oxidation state. The presence of chromite in only a few of the most ferroan (Fo 75-76) samples appears to support such a model. MicroXANES analyses were used in this study to determine the valence states of Cr (previously unknown) in olivine cores of 11 main group ureilites. The goal of this work was to use a method that is independent of Fo to determine the oxidation conditions under which ureilites formed, in order to evaluate whether the ureilite FeO-variation is correlated with oxidation state, and whether it is nebular or planetary in origin. Two of the analyzed samples, LEW 88774 (Fo 74.2) and NWA 766 (Fo 76.7) contain primary chromite; two others, LAP 03587 (Fo 74.4) and CMS 04048 (Fo 76.2) contain sub-micrometer-sized exsolutions of chromite + Ca-rich pyroxene in olivine; and one, EET 96328 (Fo 85.2) contains an unusual chromite grain of uncertain origin. No chromite has been observed in the remaining six samples (Fo 77.4-92.3). Chromium in olivine in all eleven samples was found to be dominated by the divalent species, with valences ranging from 2.10 ± 0.02 (1σ) to 2.46 ± 0.04. The non-chromite-bearing ureilites have the most reduced Cr, with a weighted mean valence of 2.12 ± 0.01, i.e., Cr2+/Cr3+ = 7.33. All low-Fo chromite-bearing ureilites have more oxidized Cr, with valences ranging from 2.22 ± 0.03 to 2.46 ± 0.04. EET 96328, whose chromite grain we interpret as a late-crystallizing phase, yielded a reduced Cr valence of 2.15 ± 0.07, similar to the non-chromite-bearing samples. Based on the measured Cr valences, magmatic (1200-1300 °C) oxygen fugacities (fO2) of the non-chromite-bearing samples were estimated to be in the range IW-1.9 to IW-2.8 (assuming

  1. Valence parity renders z(*)-type ions chemically distinct.

    PubMed

    Hubler, Shane L; Jue, April; Keith, Jason; McAlister, Graeme C; Craciun, Gheorghe; Coon, Joshua J

    2008-05-21

    Here we report that the odd electron z (*) -type ions formed by the electron-based peptide dissociation methods (electron capture or transfer, ECD or ETD) have distinctive chemical compositions from other common product ion types. Specifically, b-, c-, and y-type ions have an odd number of atoms with an odd valence (e.g., N and H), while z (*)-type ions contain an even number of atoms with an odd valence. This tenet, referred to as the valence parity rule, mandates that no c-type ion shall have the same chemical composition, and by extension mass, as a z (*) -type ion. By experiment we demonstrate that nearly half of all observed c- and z (*) -type product ions resulting from 226 ETD product ion spectra can be assigned to a single, correct, chemical composition and ion type by simple inspection of the m/ z peaks. The assignments provide (1) a platform to directly determine amino acid composition, (2) an input for database search algorithms, or (3) a basis for de novo sequence analysis.

  2. Nucleus-Dependent Valence-Space Approach to Nuclear Structure

    NASA Astrophysics Data System (ADS)

    Stroberg, S. R.; Calci, A.; Hergert, H.; Holt, J. D.; Bogner, S. K.; Roth, R.; Schwenk, A.

    2017-01-01

    We present a nucleus-dependent valence-space approach for calculating ground and excited states of nuclei, which generalizes the shell-model in-medium similarity renormalization group to an ensemble reference with fractionally filled orbitals. Because the ensemble is used only as a reference, and not to represent physical states, no symmetry restoration is required. This allows us to capture three-nucleon (3 N ) forces among valence nucleons with a valence-space Hamiltonian specifically targeted to each nucleus of interest. Predicted ground-state energies from carbon through nickel agree with results of other large-space ab initio methods, generally to the 1% level. In addition, we show that this new approach is required in order to obtain convergence for nuclei in the upper p and s d shells. Finally, we address the 1+/3+ inversion problem in 22Na and 46V. This approach extends the reach of ab initio nuclear structure calculations to essentially all light- and medium-mass nuclei.

  3. On the valence fluctuation in the early actinide metals

    SciTech Connect

    Soderlind, P.; Landa, A.; Tobin, J. G.; Allen, P.; Medling, S.; Booth, C. H.; Bauer, E. D.; Cooley, J. C.; Sokaras, D.; Weng, T. -C.; Nordlund, D.

    2015-12-15

    In this study, recent X-ray measurements suggest a degree of valence fluctuation in plutonium and uranium intermetallics. We are applying a novel scheme, in conjunction with density functional theory, to predict 5f configuration fractions of states with valence fluctuations for the early actinide metals. For this purpose we perform constrained integer f-occupation calculations for the α phases of uranium, neptunium, and plutonium metals. For plutonium we also investigate the δ phase. The model predicts uranium and neptunium to be dominated by the f3 and f4 configurations, respectively, with only minor contributions from other configurations. For plutonium (both α and δ phase) the scenario is dramatically different. Here, the calculations predict a relatively even distribution between three valence configurations. The δ phase has a greater configuration fraction of f6 compared to that of the α phase. The theory is consistent with the interpretations of modern X-ray experiments and we present resonant X-ray emission spectroscopy results for α-uranium.

  4. On the valence fluctuation in the early actinide metals

    DOE PAGES

    Soderlind, P.; Landa, A.; Tobin, J. G.; ...

    2015-12-15

    In this study, recent X-ray measurements suggest a degree of valence fluctuation in plutonium and uranium intermetallics. We are applying a novel scheme, in conjunction with density functional theory, to predict 5f configuration fractions of states with valence fluctuations for the early actinide metals. For this purpose we perform constrained integer f-occupation calculations for the α phases of uranium, neptunium, and plutonium metals. For plutonium we also investigate the δ phase. The model predicts uranium and neptunium to be dominated by the f3 and f4 configurations, respectively, with only minor contributions from other configurations. For plutonium (both α and δmore » phase) the scenario is dramatically different. Here, the calculations predict a relatively even distribution between three valence configurations. The δ phase has a greater configuration fraction of f6 compared to that of the α phase. The theory is consistent with the interpretations of modern X-ray experiments and we present resonant X-ray emission spectroscopy results for α-uranium.« less

  5. Core-core and core-valence correlation

    NASA Technical Reports Server (NTRS)

    Bauschlicher, Charles W., Jr.; Langhoff, Stephen R.; Taylor, Peter R.

    1988-01-01

    The effect of (1s) core correlation on properties and energy separations was analyzed using full configuration-interaction (FCI) calculations. The Be 1 S - 1 P, the C 3 P - 5 S and CH+ 1 Sigma + or - 1 Pi separations, and CH+ spectroscopic constants, dipole moment and 1 Sigma + - 1 Pi transition dipole moment were studied. The results of the FCI calculations are compared to those obtained using approximate methods. In addition, the generation of atomic natural orbital (ANO) basis sets, as a method for contracting a primitive basis set for both valence and core correlation, is discussed. When both core-core and core-valence correlation are included in the calculation, no suitable truncated CI approach consistently reproduces the FCI, and contraction of the basis set is very difficult. If the (nearly constant) core-core correlation is eliminated, and only the core-valence correlation is included, CASSCF/MRCI approached reproduce the FCI results and basis set contraction is significantly easier.

  6. Predicting the Valence of a Scene from Observers’ Eye Movements

    PubMed Central

    R.-Tavakoli, Hamed; Atyabi, Adham; Rantanen, Antti; Laukka, Seppo J.; Nefti-Meziani, Samia; Heikkilä, Janne

    2015-01-01

    Multimedia analysis benefits from understanding the emotional content of a scene in a variety of tasks such as video genre classification and content-based image retrieval. Recently, there has been an increasing interest in applying human bio-signals, particularly eye movements, to recognize the emotional gist of a scene such as its valence. In order to determine the emotional category of images using eye movements, the existing methods often learn a classifier using several features that are extracted from eye movements. Although it has been shown that eye movement is potentially useful for recognition of scene valence, the contribution of each feature is not well-studied. To address the issue, we study the contribution of features extracted from eye movements in the classification of images into pleasant, neutral, and unpleasant categories. We assess ten features and their fusion. The features are histogram of saccade orientation, histogram of saccade slope, histogram of saccade length, histogram of saccade duration, histogram of saccade velocity, histogram of fixation duration, fixation histogram, top-ten salient coordinates, and saliency map. We utilize machine learning approach to analyze the performance of features by learning a support vector machine and exploiting various feature fusion schemes. The experiments reveal that ‘saliency map’, ‘fixation histogram’, ‘histogram of fixation duration’, and ‘histogram of saccade slope’ are the most contributing features. The selected features signify the influence of fixation information and angular behavior of eye movements in the recognition of the valence of images. PMID:26407322

  7. Use of L-edge X-ray absorption spectroscopy to characterize multiple valence states of 3 d transition metals; a new probe for mineralogical and geochemical research

    NASA Astrophysics Data System (ADS)

    Cressey, G.; Henderson, C. M. B.; van der Laan, G.

    1993-07-01

    2 p ( L 2,3) X-ray absorption spectra are presented for a range of minerals to demonstrate the usefulness of L-edge spectroscopy as a symmetry- and valenceselective probe. 2 p XAS provides a sensitive fingerprint of the electronic states of 3 d transition metals and can be applied to phases containing mixtures of such elements. Calculated spectra for 3 d n → 2 p 5 3 d n+1 transitions provide a basis for the interpretation of the measured spectra. Thus, in principle, multiple valence states of a particular 3 d metal can be precisely characterized from a single L-edge spectrum. Examples of vanadium L-edge spectra are presented for a range of minerals; these complex spectra hold information concerning the presence of vanadium in multiple valence states. The Cu L-edge spectrum of sulvanite (Cu3 VS4) indicates the presence of both Cu+ and Cu2+; the V L-edge spectrum of the same sample shows that both V2+ and V5+ are present. Spectral simulations representing mixtures of Fe d 5 and Fe d 6 states are used to quantify Fe3+/ ∑Fe in a spinel, a glass, and an amphibole, all of which contain Fe as a major component. To illustrate the sensitivity of 2 p XAS in a dilute system, the Fe L-edge spectrum of amethyst ( α-SiO2: Fe) has been recorded; this spectrum shows that ˜68% of the Fe in amethyst is Fe2+, and ˜32% is Fe3+. Although previous studies on amethyst using other spectroscopic methods cite evidence for Fe4+, there is no indication in the L-edge spectrum for Fe4+ in amethyst. Comparison of theoretical and experimental spectra not only allows the valence states of 3 d ions to be recognised, but also provides site-symmetry information and crystal field parameters for each ion site.

  8. Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals

    SciTech Connect

    Wang, Xinshun Liu, Yang; Zhao, Panjuan; Guo, Zhongyi; Li, Yan; Qu, Shiliang

    2015-04-21

    The broad band upconversion luminescence in Yb{sup 3+}:YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463 nm could be assigned to the 5d → 4f transitions of Yb{sup 2+} ions and the one at 692 nm could be attributed to the electron-hole recombination process on (Yb{sup 2+}-F{sup +}) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb{sup 3+} to Yb{sup 2+} and (Yb{sup 2+}-F{sup +}) centers have been induced by infrared femtosecond laser irradiation in Yb{sup 3+}:YAG crystal.

  9. Multi-configuration Dirac-Hartree-Fock calculations of the transition rates of 2s22p2 - 2s2p3 and 2s2p3 - 2s22pnl (n ≥ 3) E1 transitions of N+

    NASA Astrophysics Data System (ADS)

    Shen, Xiaozhi; Liu, Juan; Zhou, Fuyang

    2016-10-01

    Wavefunctions were determined using the multi-configuration Dirac-Hartree-Fock method. The core-core, core-valence, valence correlation, Breit interaction and quantum electrodynamics effects, as well as some higher-order correlation effects, were considered to obtain accurate wavelengths (λ), oscillator strengths (gf) and transition rates (A) of 2s22p2 - 2s2p3, 2s2p3 - 2s22pnl (n ≥ 3) and 2s2p3 - 2s2p23s E1 transitions. The branching ratio of 2s2p3 5S^o_2 (namely Aλ2143.45/Aλ2139.68) based on the latest calculation of 2.462 ± 0.119 is recommended for the determination of a nebula's electron temperature and electron density. The largest calculated gf value of 2s2p3 - 2s22p4p is λ630.65, differing from that of λ1060.2 (i.e. 2s2p3 3P^o_2 - 2s22p4p 3S1) that was observed with the largest intensities in the Orion Nebula spectrum. In addition, the energy levels and the splittings of 2s2p3, the extremely difficult calculations of the rates of two-electron one-photon transitions as well as those of the very small intercombination A of 2s2p3 5S^o_2 were studied in detail. Because of the weak spin-orbit interaction, accurately calculating the levels 3P^o_{1,2,0} (or 3D^o_{3,2,1}) and their transition matrix elements is very sensitive to relativistic and electron correlation effects. A special case for this is when the transition operators synchronously applied to wavefunctions with regard to 2s2p3 3Po and 2s22pnl (n = 4) become extremely sensitive to some higher-order correlation effects.

  10. Excitations of one-valence-proton, one-valence-neutron nucleus {sup 210}Bi from cold-neutron capture

    SciTech Connect

    Cieplicka-Oryńczak, N.; Fornal, B.; Szpak, B.; Leoni, S.; Bottoni, S.; Bazzacco, D.; Blanc, A.; Jentschel, M.; Köster, U.; Mutti, P.; Soldner, T.; Bocchi, G.; France, G. de; Simpson, G.; Urban, W.

    2015-10-15

    The low-spin structure of one-proton, one-neutron {sup 210}Bi nucleus was investigated in cold-neutron capture reaction on {sup 209}Bi. The γ-coincidence measurements were performed with use of EXILL array consisted of 16 HPGe detectors. The experimental results were compared to shell-model calculations involving valence particles excitations. The {sup 210}Bi nucleus offers the potential to test the effective proton-neutron interactions because most of the states should arise from the proton-neutron excitations. Additionally, it was discovered that a few states should come from the couplings of valence particles to the 3{sup −} octupole vibration in {sup 208}Pb which provides also the possibility of testing the calculations involving the core excitations.

  11. Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

    DOE PAGES

    Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; ...

    2015-11-24

    Complex doping schemes in R3Al5O12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimum (CBM) or valence-bandmore » maximum (VBM). We consider two sets of compositions based on Lu3B5O12 where B is Al, Ga, In, As, and Sb, and R3Al5O12, where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. Furthermore, this approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.« less

  12. Structure of a positive-parity band in 130Pr

    NASA Astrophysics Data System (ADS)

    Ma, K. Y.; Lu, J. B.; Xu, X.; Liu, Y. M.; Zhang, Z.; Li, X. Y.; Yang, D.; Liu, Y. Z.; Wu, X. G.; He, C. Y.; Zheng, Y.; Li, C. B.

    2017-01-01

    High-spin states of 130Pr have been populated using the 99Ru(35Cl, 2n2p)130Pr reaction at a beam energy of 151 MeV. A new positive-parity side band has been identified and possible interpretations on the origin of the side band have been discussed.

  13. Electronic- and band-structure evolution in low-doped (Ga,Mn)As

    SciTech Connect

    Yastrubchak, O.; Gluba, L.; Żuk, J.; Sadowski, J.; Krzyżanowska, H.; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2013-08-07

    Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

  14. On pleasure and thrill: the interplay between arousal and valence during visual word recognition.

    PubMed

    Recio, Guillermo; Conrad, Markus; Hansen, Laura B; Jacobs, Arthur M

    2014-07-01

    We investigated the interplay between arousal and valence in the early processing of affective words. Event-related potentials (ERPs) were recorded while participants read words organized in an orthogonal design with the factors valence (positive, negative, neutral) and arousal (low, medium, high) in a lexical decision task. We observed faster reaction times for words of positive valence and for those of high arousal. Data from ERPs showed increased early posterior negativity (EPN) suggesting improved visual processing of these conditions. Valence effects appeared for medium and low arousal and were absent for high arousal. Arousal effects were obtained for neutral and negative words but were absent for positive words. These results suggest independent contributions of arousal and valence at early attentional stages of processing. Arousal effects preceded valence effects in the ERP data suggesting that arousal serves as an early alert system preparing a subsequent evaluation in terms of valence.

  15. Character disposition and behavior type: influences of valence on preschool children's social judgments.

    PubMed

    Jones, Elaine F; Tobias, Marvin; Pauley, Danielle; Thomson, Nicole Renick; Johnson, Shawana Lewis

    2009-12-01

    The authors studied the influences of valence information on preschool children's (n = 47) moral (good or bad), liking (liked or disliked by a friend), and consequence-of-behavior (reward or punishment) judgments. The authors presented 8 scenarios describing the behavior valence, positive valence (help, share), negative valence (verbal insult, physical aggression), and disposition valence (nice or mean) of characters in social interaction with a friend. Overall, character disposition and behavior valence significantly influenced children's judgments. Moral, liking, and consequence-of-behavior judgments varied significantly by character disposition for both positive behavior scenarios. In contrast, there were fewer significant findings as a function of character disposition for negative behavior scenarios, suggesting that the negative behavior cue somewhat diminished the effect of character disposition on children's judgments. The authors discuss preschool students' coordination of information about valence of behavior and character disposition and the students' reluctance to judge that misbehavior warrants punitive consequence.

  16. Dual doped monolayer and bilayer graphene: The case of 4p and 2p elements

    NASA Astrophysics Data System (ADS)

    Denis, Pablo A.; Iribarne, Federico

    2016-08-01

    4p/2p dual-doped monolayer and bilayer graphene were studied via first principle calculations. Generally, dopants prefer to be agglomerated. A second dopant significantly reduces formation energies. Thus, partially reduced graphene oxide would favor substitutional doping by facilitating the introduction of the 4p dopants. Dual-doping can tune the band gap from 0.1 to 0.8 eV. For bilayer graphene, large atomic radii elements (Gallium and Germanium) form interlayer bonds with the undoped sheet. For some dual-doped graphenes, interlayer GaC and GeC bonds were formed, increasing the chemical reactivity of the undoped layer and affecting its electronic structure, with metallic or semiconducting characters observed.

  17. Precision lifetime measurements of the 2p levels in lithium

    SciTech Connect

    Berry, H.G.; Kurtz, C.; Tanner, C.E.

    1995-08-01

    These measurements are motivated by the theoretical challenges posed by lithium. The three-electron lithium atom is one of the simplest atomic systems with which to test atomic structure calculations. Recently, there were several ab initio calculations of the lithium 2s-2p oscillator strengths, which agree to 0.15%. However, the theoretical results differ by 5 sigma from the precise fast-beam-laser lifetime measurement of Gaupp and Andra (Berlin). Hence the need for a new independent and precise measurement. Improvements were added to the fast beam laser techniques developed for cesium in order to measure the lithium 2p state lifetime. Although the technique is similar to that of cesium, the lithium atom presents a few new complications. Since the atom is lighter, it travels more quickly through the interaction and detection regions. Therefore, the 670 nm wavelength requires a dye laser to produce sufficient intensity to populate the excited state. Unfortunately, the intensity of the dye laser is inherently less stable than that of a diode laser. Another complication is that the ion-beam intensity is much more sensitive to fluctuations in the accelerating voltage. Two detectors were added: one to monitor the ion-beam intensity, and the other to monitor the laser power. With the information from the additional detectors, a new data analysis scheme was developed. Sufficient data were taken to evaluate the benefits of the new detectors. No additional work is planned at Argonne for this experiment.

  18. P2P Reputation Management Through Social Networking

    NASA Astrophysics Data System (ADS)

    Despotovic, Zoran

    Reputation systems offer a viable solution to the problem of risk reduction in online communities, in situation in which other mechanism such as litigation or security cannot help. Building on the assumption that its participating entities engage in repeated interactions, a reputation system can either signal what happened in the past or aggregate the past feedback in such a way as to influence the future actions of the concerned entity. In the former case, the concerned entity's behavior is seen as static, while the sent signal is expected to be indicative of the entity's future actions. In the latter case, behavior is dynamic in the sense that the entity can adjust it given the observed feedback, while the purpose of the reputation system is to induce adjustments according to the designer's needs. In this chapter, we discuss these two classes of solutions in detail. In particular, we investigate how they apply to P2P networks, what additional problems and difficulties the P2P environment introduces and what scalable solutions to these problems the current research offers.

  19. Affinity Purification and Characterization of a G-Protein Coupled Receptor, Saccharomyces cerevisiae Ste2p

    SciTech Connect

    Lee, Byung-Kwon; Jung, Kyung-Sik; Son, Cagdas D; Kim, Heejung; Verberkmoes, Nathan C; Arshava, Boris; Naider, Fred; Becker, Jeffrey Marvin

    2007-01-01

    We present a rare example of a biologically active G protein coupled receptor (GPCR) whose purity and identity were verified by mass spectrometry after being purified to near homogeneity from its native system. An overexpression vector was constructed to encode the Saccharomyces cerevisiae GPCR -factor receptor (Ste2p, the STE2 gene product) containing a 9-amino acid sequence of rhodopsin that served as an epitope/affinity tag. In the construct, two glycosylation sites and two cysteine residues were removed to aid future structural and functional studies. The receptor was expressed in yeast cells and was detected as a single band in a western blot indicating the absence of glycosylation. Tests of the epitope-tagged, mutated receptor showed it maintained its full biological activity. For extraction of Ste2p, yeast membranes were solubilized with 0.5 % n-dodecyl maltoside (DM). Approximately 120 g of purified -factor receptor was obtained per liter of culture by single-step affinity chromatography using a monoclonal antibody to the rhodopsin epitope. The binding affinity (Kd) of the purified -factor receptor in DM micelles was 28 nM as compared to Kd = 12.7 nM for Ste2p in cell membranes, and approximately 40 % of the purified receptor was correctly folded as judged by ligand saturation binding. About 50 % of the receptor sequence was retrieved from MALDITOF and nanospray mass spectrometry after CNBr digestion of the purified receptor. The methods described will enable structural studies of the -factor receptor and may provide an efficient technique to purify other GPCRs that have been functionally expressed in yeast.

  20. Kinetics of the Reactions of F((sup 2)P) and Cl((sup 2)P) with HNO3

    NASA Technical Reports Server (NTRS)

    Wine, P. H.; Wells, J. R.; Nicovich, J. M.

    1997-01-01

    The kinetics of the reactions of HNO3 with fluorine (k(sub 1)) and Chlorine (k(sub 2)) atoms have been studied by using a time-resolved long-path laser absorption technique to monitor the appearance of product NO3 radicals following 351-nm pulsed laser photolysis of X2/HNO3/He mixtures (X = F,Cl). Absolute rate coefficients for the F((sup 2)P) + HNO reaction have been determined over the temperature range 260-373 K. Between 260 and 320 K, the data are adequately represented by the Arrhenius expression k(sub 1)(T) = (6.0 +/- 2.6) x 10(exp -12) exp[(40 +/- 120)/T]cu cm/(molecule.s). Between 335 and 373 K, the rate coefficient is found to be (2.0 +/- 0.3) x 10(exp -11)cu cm/(molecule.s) independent of temperature. The observed temperature dependence suggests that reaction proceeds via competing direct abstraction and complex pathways. No NO3 production was observed in the experiments with X equals Cl, thus establishing that k(sub 2)(298 K) is less than 2 x 10(exp -16) cu cm/(molecule.s). The Cl((sup 2)P) + HNO reaction was also investigated by using a pulsed laser photolysis-resonance fluorescence technique to monitor the decay of Cl((sup 2)P). Upper limit values for k(sub 2) obtained from these experiments, in units of 10(exp -16)cu cm/(molecule.s), are 13 at 298 K and 10 at 400 K.

  1. Mott Transition of MnO under Pressure: A Comparison of Correlated Band Theories

    SciTech Connect

    Kasinathan, Deepa; Kunes, Jan; Koepernik, K; Diaconu, Cristian V; Martin, Richard L; Prodan, Ionut; Scuseria, Gustavo E; Spaldin, Nicola; Petit, Leon; Schulthess, Thomas C; Pickett, W. E.

    2006-01-01

    The electronic structure, magnetic moment, and volume collapse of MnO under pressure are obtained from four different correlated band theory methods; local density approximation+Hubbard U (LDA+U), pseudopotential self-interaction correction (pseudo-SIC), the hybrid functional (combined local exchange plus Hartree-Fock exchange), and the local spin density SIC (SIC-LSD) method. Each method treats correlation among the five Mn 3d orbitals (per spin), including their hybridization with three O 2p orbitals in the valence bands and their changes with pressure. The focus is on comparison of the methods for rock salt MnO (neglecting the observed transition to the NiAs structure in the 90-100 GPa range). Each method predicts a first-order volume collapse, but with variation in the predicted volume and critical pressure. Accompanying the volume collapse is a moment collapse, which for all methods is from high-spin to low-spin ((5/2){yields}(1/2)), not to nonmagnetic as the simplest scenario would have. The specific manner in which the transition occurs varies considerably among the methods: pseudo-SIC and SIC-LSD give insulator-to-metal, while LDA+U gives insulator-to-insulator and the hybrid method gives an insulator-to-semimetal transition. Projected densities of states above and below the transition are presented for each of the methods and used to analyze the character of each transition. In some cases the rhombohedral symmetry of the antiferromagnetically ordered phase clearly influences the character of the transition.

  2. Mott transition of MnO under pressure: A comparison of correlated band theories

    NASA Astrophysics Data System (ADS)

    Kasinathan, Deepa; Kuneš, J.; Koepernik, K.; Diaconu, Cristian V.; Martin, Richard L.; Prodan, Ionuţ D.; Scuseria, Gustavo E.; Spaldin, Nicola; Petit, L.; Schulthess, T. C.; Pickett, W. E.

    2006-11-01

    The electronic structure, magnetic moment, and volume collapse of MnO under pressure are obtained from four different correlated band theory methods; local density approximation+Hubbard U (LDA+U) , pseudopotential self-interaction correction (pseudo-SIC), the hybrid functional (combined local exchange plus Hartree-Fock exchange), and the local spin density SIC (SIC-LSD) method. Each method treats correlation among the five Mn 3d orbitals (per spin), including their hybridization with three O 2p orbitals in the valence bands and their changes with pressure. The focus is on comparison of the methods for rocksalt MnO (neglecting the observed transition to the NiAs structure in the 90-100GPa range). Each method predicts a first-order volume collapse, but with variation in the predicted volume and critical pressure. Accompanying the volume collapse is a moment collapse, which for all methods is from high-spin to low-spin ((5)/(2)→(1)/(2)) , not to nonmagnetic as the simplest scenario would have. The specific manner in which the transition occurs varies considerably among the methods: pseudo-SIC and SIC-LSD give insulator-to-metal, while LDA+U gives insulator-to-insulator and the hybrid method gives an insulator-to-semimetal transition. Projected densities of states above and below the transition are presented for each of the methods and used to analyze the character of each transition. In some cases the rhombohedral symmetry of the antiferromagnetically ordered phase clearly influences the character of the transition.

  3. Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides

    SciTech Connect

    Shaposhnikov, V. L. Migas, D. B.; Borisenko, V. E.; Dorozhkin, N. N.

    2009-02-15

    The pseudopotential method has been used to optimize the crystal lattice and calculate the energy band spectra for iron, ruthenium and, osmium monosilicides. It is found that all these compounds are indirect-gap semiconductors with band gaps of 0.17, 0.22, and 0.50 eV (FeSi, RuSi, and OsSi, respectively). A distinctive feature of their band structure is the 'loop of extrema' both in the valence and conduction bands near the center of the cubic Brillouin zone.

  4. Composite Chiral Bands in the A{approx}105 Mass Region

    SciTech Connect

    Timar, J.; Sohler, D.; Molnar, J.; Algora, A.; Dombradi, Zs.; Krasznahorkay, A.; Zolnai, L.; Vaman, C.; Starosta, K.; Joshi, P.; Wadsworth, R.; Jenkins, D.G.; Raddon, P.M.; Simons, A.J.; Wilkinson, A.R.; Dimitrov, V.I.; Fossan, D.B.; Koike, T.; Bednarczyk, P.; Curien, D.

    2005-11-21

    Composite chiral bands, corresponding to the {pi}g9/2v(h11/2)2 quasiparticle configuration, have been observed in 103Rh and 105Rh. The behaviour of these bands is compared with that of the chiral bands with a {pi}g9/2vh11/2 quasiparticle configuration observed in the odd-odd 102Rh and 104Rh nuclei. This comparison shows in a model independent way that the energy separation pattern of the chiral partner bands depends strongly on the properties of the triaxial core whilst the dependence on the valence quasiparticle coupling and on the Fermi level is weaker.

  5. Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

    SciTech Connect

    Simma, M.; Bauer, G.; Springholz, G.

    2012-10-22

    The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

  6. Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

    SciTech Connect

    Jandieri, K. Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, S. W.; Volz, K.; Stolz, W.

    2015-08-14

    We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

  7. Interstitial microduplication at 2p11.2 in a patient with syndromic intellectual disability: 30-year follow-up

    PubMed Central

    2014-01-01

    Background Copy number variations at 2p11.2 have been rare and to our knowledge, no abnormal phenotype with an interstitial 2p11.2 duplication has yet been reported. Here we report the first case with syndromic intellectual disability associated with microduplication at 2p11.2. Results We revisited a white female subject with a chromosome translocation, t(8;10)(p23;q23)mat and a 10q telomeric deletion suspected by G-banding 30 years ago. This female with severe intellectual disability, no speech, facial dysmorphism, intractable epilepsy, recurrent infection, and skeletal abnormalities has been observed from the birth until her death. The karyotype analysis reconfirmed the previously reported chromosome translocation with a revision as 46,XX,t(8;10)(p23.3;q23.2)mat by adding more detail in chromosomal sub-bands. The array comparative genomic hybridization, however, did not detect the 10q terminal deletion originally reported, but instead, revealed a 390 kb duplication at 2p11.2; 46,XX,t(8;10)(p23.3;q23.2)mat.arr[hg 19] 2p11.2(85469151x2,85474356-85864257x3,85868355x2). This duplication region was confirmed by real-time quantitative PCR and real-time reverse transcriptase quantitative PCR. Conclusions We suggest three positional candidate genes for intellectual disability and recurrent infection based upon gene function and data from real-time reverse transcriptase quantitative PCR—VAMP8 and RNF181 for intellectual disability and CAPG for recurrent infection. PMID:25295072

  8. Gold atomic clusters extracting the valence electrons to shield the carbon monoxide passivation on near-monolayer core-shell nanocatalysts in methanol oxidation reactions.

    PubMed

    Chen, Tsan-Yao; Li, Hong Dao; Lee, Guo-Wei; Huang, Po-Chun; Yang, Po-Wei; Liu, Yu-Ting; Liao, Yen-Fa; Jeng, Horng-Tay; Lin, Deng-Sung; Lin, Tsang-Lang

    2015-06-21

    Atomic-scale gold clusters were intercalated at the inter-facet corner sites of Pt-shell Ru-core nanocatalysts with near-monolayer shell thickness. We demonstrated that these unique clusters could serve as a drain of valence electrons in the kink region of the core-shell heterojunction. As jointly revealed by density functional theory calculations and valence band spectra, these Au clusters extract core-level electrons to the valence band. They prevent corrosion due to protonation and enhance the tolerance of CO by increasing the electronegativity at the outermost surface of the NCs during the methanol oxidation reaction (MOR). In these circumstances, the retained current density of Pt-shell Ru-core NCs is doubled in a long-term (2 hours) MOR at a fixed voltage (0.5 V vs. SCE) by intercalating these sub-nanometer gold clusters. Such novel structural confinement provides a possible strategy for developing direct-methanol fuel cell (DMFC) modules with high power and stability.

  9. Band-structure engineering in conjugated 2D polymers.

    PubMed

    Gutzler, Rico

    2016-10-26

    Conjugated polymers find widespread application in (opto)electronic devices, sensing, and as catalysts. Their common one-dimensional structure can be extended into the second dimension to create conjugated planar sheets of covalently linked molecules. Extending π-conjugation into the second dimension unlocks a new class of semiconductive polymers which as a consequence of their unique electronic properties can find usability in numerous applications. In this article the theoretical band structures of a set of conjugated 2D polymers are compared and information on the important characteristics band gap and valence/conduction band dispersion is extracted. The great variance in these characteristics within the investigated set suggests 2D polymers as exciting materials in which band-structure engineering can be used to tailor sheet-like organic materials with desired electronic properties.

  10. Massive band gap variation in layered oxides through cation ordering

    NASA Astrophysics Data System (ADS)

    Balachandran, Prasanna V.; Rondinelli, James M.

    2015-01-01

    The electronic band gap is a fundamental material parameter requiring control for light harvesting, conversion and transport technologies, including photovoltaics, lasers and sensors. Although traditional methods to tune band gaps rely on chemical alloying, quantum size effects, lattice mismatch or superlattice formation, the spectral variation is often limited to <1 eV, unless marked changes to composition or structure occur. Here we report large band gap changes of up to 200% or ~2 eV without modifying chemical composition or use of epitaxial strain in the LaSrAlO4 Ruddlesden-Popper oxide. First-principles calculations show that ordering electrically charged [LaO]1+ and neutral [SrO]0 monoxide planes imposes internal electric fields in the layered oxides. These fields drive local atomic displacements and bond distortions that control the energy levels at the valence and conduction band edges, providing a path towards electronic structure engineering in complex oxides.

  11. Observation of a novel stapler band in 75As

    NASA Astrophysics Data System (ADS)

    Li, C. G.; Chen, Q. B.; Zhang, S. Q.; Xu, C.; Hua, H.; Li, X. Q.; Wu, X. G.; Hu, S. P.; Meng, J.; Xu, F. R.; Liang, W. Y.; Li, Z. H.; Ye, Y. L.; Jiang, D. X.; Sun, J. J.; Han, R.; Niu, C. Y.; Chen, X. C.; Li, P. J.; Wang, C. G.; Wu, H. Y.; Li, G. S.; He, C. Y.; Zheng, Y.; Li, C. B.; Chen, Q. M.; Zhong, J.; Zhou, W. K.

    2017-03-01

    The heavy ion fusion-evaporation reaction study for the high-spin spectroscopy of 75As has been performed via the reaction channel 70Zn(9Be, 1p3n)75As at a beam energy of 42 MeV. The collective structure especially a dipole band in 75As is established for the first time. The properties of this dipole band are investigated in terms of the self-consistent tilted axis cranking covariant density functional theory. Based on the theoretical description and the examination of the angular momentum components, this dipole band can be interpreted as a novel stapler band, where the valence neutrons in (1g9/2) orbital rather than the collective core are responsible for the closing of the stapler of angular momentum.

  12. Valence-quark distribution functions in the kaon and pion

    SciTech Connect

    Chen, Chen; Chang, Lei; Roberts, Craig D.; Wan, Shaolong; Zong, Hong-Shi

    2016-04-18

    We describe expressions for pion and kaon dressed-quark distribution functions that incorporate contributions from gluons which bind quarks into these mesons and hence overcome a flaw of the commonly used handbag approximation. The distributions therewith obtained are purely valence in character, ensuring that dressed quarks carry all the meson’s momentum at a characteristic hadronic scale and vanish as ( 1 - x ) 2 when Bjorken- x → 1 . Comparing such distributions within the pion and kaon, it is apparent that the size of S U ( 3 ) -flavor symmetry breaking in meson parton distribution functions is modulated by the flavor dependence of dynamical chiral symmetry breaking. Corrections to these leading-order formulas may be divided into two classes, responsible for shifting dressed-quark momentum into glue and sea quarks. Working with available empirical information, we build an algebraic framework that is capable of expressing the principal impact of both classes of corrections. This enables a realistic comparison with experiment which allows us to identify and highlight basic features of measurable pion and kaon valence-quark distributions. We find that whereas roughly two thirds of the pion’s light-front momentum is carried by valence dressed quarks at a characteristic hadronic scale; this fraction rises to 95% in the kaon; evolving distributions with these features to a scale typical of available Drell-Yan data produces a kaon-to-pion ratio of u -quark distributions that is in agreement with the single existing data set, and predicts a u -quark distribution within the pion that agrees with a modern reappraisal of π N Drell-Yan data. Precise new data are essential in order to validate this reappraisal and because a single modest-quality measurement of the kaon-to-pion ratio cannot be considered definitive.

  13. Three-step approach for computing band offsets and its application to inorganic A B X3 halide perovskites

    NASA Astrophysics Data System (ADS)

    Lang, Li; Zhang, Yue-Yu; Xu, Peng; Chen, Shiyou; Xiang, H. J.; Gong, X. G.

    2015-08-01

    Band offsets between different semiconductors are important parameters that determine the electronic transport properties near the interface in the heterostructure devices. The computation of the natural band offset is a well-known challenge. In this paper, we propose a new method, which is called the three-step method, to accurately predict the natural band offset. Compared to previous methods, the present method is more direct and can be easily applied to systems with larger lattice mismatch and to systems with lower symmetry. Using the present method, we successfully calculate the natural band offset between the inorganic halide perovskites A B X3(A =Cs ;B =Sn ,Pb ;X =Cl ,B ,I ) in the cubic and orthorhombic phase. We show that the valence band maximum shifts down as the atomic number of the X site ion increases, while the valence band maximum shifts up as B site ion varies from Sn to Pb or as the compound transforms from the cubic phase to the orthorhombic phase. It is found that the band gap differences between these compounds can be attributed primarily to the valence band offsets, with a much smaller contribution from the conduction band offsets.

  14. Pion and kaon valence-quark parton distribution functions

    SciTech Connect

    Nguyen, Trang; Bashir, Adnan; Roberts, Craig D.; Tandy, Peter C.

    2011-06-15

    A rainbow-ladder truncation of QCD's Dyson-Schwinger equations, constrained by existing applications to hadron physics, is employed to compute the valence-quark parton distribution functions of the pion and kaon. Comparison is made to {pi}-N Drell-Yan data for the pion's u-quark distribution and to Drell-Yan data for the ratio u{sub K}(x)/u{sub {pi}}(x): the environmental influence of this quantity is a parameter-free prediction, which agrees well with existing data. Our analysis unifies the computation of distribution functions with that of numerous other properties of pseudoscalar mesons.

  15. Pion and kaon valence-quark parton distribution functions.

    SciTech Connect

    Nguyen, T.; Bashir, A.; Roberts, C. D.; Tandy, P. C.

    2011-06-16

    A rainbow-ladder truncation of QCD's Dyson-Schwinger equations, constrained by existing applications to hadron physics, is employed to compute the valence-quark parton distribution functions of the pion and kaon. Comparison is made to {pi}-N Drell-Yan data for the pion's u-quark distribution and to Drell-Yan data for the ratio u{sub K}(x)/u{sub {pi}}(x): the environmental influence of this quantity is a parameter-free prediction, which agrees well with existing data. Our analysis unifies the computation of distribution functions with that of numerous other properties of pseudoscalar mesons.

  16. 1D valence bond solids in a magnetic field

    NASA Astrophysics Data System (ADS)

    Iaizzi, Adam; Sandvik, Anders W.

    2015-09-01

    A Valence bond solid (VBS) is a nonmagnetic, long-range ordered state of a quantum spin system where local spin singlets are formed in some regular pattern. We here study the competition between VBS order and a fully polarized ferromagnetic state as function of an external magnetic field in a one-dimensional extended Heisenberg model—the J-Q2 model— using stochastic series expansion (SSE) quantum Monte Carlo simulations with directed loop updates. We discuss the ground state phase diagram.

  17. Aging and long-term memory for emotionally valenced events.

    PubMed

    Breslin, Carolyn W; Safer, Martin A

    2013-06-01

    In 2008, 1103 ardent Boston Red Sox fans answered questions about their team's 2003 loss and 2004 win in baseball championship games with archrival New York Yankees. Contrary to predictions based on socioemotional selectivity theory, there were no significant interactions of age and event valence for accuracy in remembering event details, or for self-reported subjective vividness and rehearsal of the memories. Fans 65 years and older tended to remember feeling only sad about the 2003 loss, whereas fans 25 years and under tended to remember feeling both sad and angry. Individuals may remember emotional feelings based on remembered goals about an event.

  18. Rydberg, Valence and Ion-Pair Quintet States of O_2

    NASA Astrophysics Data System (ADS)

    Vazquez, Gabriel J.; Liebermann, Hans P.; Lefebvre-Brion, H.

    2015-06-01

    We carried out a relatively comprehensive ab--initio study of the electronic structure of O_2 and O_2^+. We employed the MRD--CI package together with the cc--pV4Z basis set augmented with seven diffuse functions of s, p and d character on each atom. In this contribution we focus on the quintet states. Potential energy curves of about 50 quintet states were computed. The spectroscopic constants of the six valence quintet states (^5σ^+_g, ^5σ^-_g, ^5σ^-_u, ^5Π_u, ^5Π_g, ^5Δ_g) dissociating to the first dissociation limit O(^3P)+O(^3P) are reported. The four ion--pair quintet states (^5σ^-_g, ^5σ^-_u, ^5Π_g, ^5Π_u) dissociating into O^+(^4S)+O^-(^2P) at 17.28 eV were also computed and their spectroscopic constants will be presented. A number of bound quintet Rydberg states belonging to series converging to the a^4Π_u, b^4σ^-_g, f^4Π_g and ^6σ^+_u states of the O_2^+ cation were identified and attributed. Long--range interactions involving the ion--pair states as they slowly approach their dissociation limit will be shown.

  19. Come Join the Band

    ERIC Educational Resources Information Center

    Olson, Cathy Applefeld

    2011-01-01

    A growing number of students in Blue Springs, Missouri, are joining the band, drawn by a band director who emphasizes caring and inclusiveness. In the four years since Melissia Goff arrived at Blue Springs High School, the school's extensive band program has swelled. The marching band alone has gone from 100 to 185 participants. Also under Goff's…

  20. Electronic structure and optical properties of noncentrosymmetric LiGaSe2: Experimental measurements and DFT band structure calculations

    NASA Astrophysics Data System (ADS)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Ananchenko, L. N.; Isaenko, L. I.; Yelisseyev, A. P.; Khyzhun, O. Y.

    2017-04-01

    We report on measurements of X-ray photoelectron (XP) spectra for pristine and Ar+ ion-irradiated surfaces of LiGaSe2 single crystal grown by Bridgman-Stockbarger method. Electronic structure of the LiGaSe2 compound is studied from a theoretical and experimental viewpoint. In particular, total and partial densities of states of LiGaSe2 are investigated by density functional theory (DFT) calculations employing the augmented plane wave + local orbitals (APW + lo) method and they are verified by data of X-ray spectroscopy measurements. The DFT calculations indicate that the main contributors to the valence band of LiGaSe2 are the Se 4p states, which contribute mainly at the top and in the upper portion of the valence band, with also essential contributions of these states in the lower portion of the band. Other substantial contributions to the valence band of LiGaSe2 emerge from the Ga 4s and Ga 4p states contributing mainly at the lower ant upper portions of the valence band, respectively. With respect to the conduction band, the calculations indicate that its bottom is composed mainly from contributions of the unoccupied Ga s and Se p states. The present calculations are confirmed experimentally when comparing the XP valence-band spectrum of the LiGaS2 single crystal on a common energy scale with the X-ray emission bands representing the energy distribution of the Ga 4p and Se 4p states. Measurements of the fundamental absorption edges at room temperature reveal that bandgap value, Eg, of LiGaSe2 is equal to 3.47 eV and the Eg value increases up to 3.66 eV when decreasing temperature to 80 K. The main optical characteristics of the LiGaSe2 compound are clarified by the DFT calculations.

  1. Visible and Infrared Study of Comet 2P/Encke's Nucleus During Its 2013 Apparition

    NASA Astrophysics Data System (ADS)

    Fernandez, Yanga R.; Mueller, Beatrice E.; Samarasinha, Nalin H.; Woodney, Laura M.; Abell, Paul A.

    2014-11-01

    The 2013 apparition of comet 2P/Encke provided an opportunity to study the comet while it was relatively close to Earth (0.48 AU on October 17, the closest pass until 2030). We initiated a multiwavelength observing campaign for September and October with the goal of further characterizing the physical, thermal, and rotational properties of 2P's nucleus. Spectral observations were timed to coincide with an equator-on view of the nucleus, a rarely-seen vantage point compared to previous data (e.g. [1,2,3,4]). The spectra span both Wien-side thermal emission and reflected sunlight, covering 0.7 to 2.5 μm, and sample all of the nucleus's rotational longitudes. They were obtained using the SpeX instrument at the NASA Infrared Telescope Facility (IRTF). We will present results on thermal inertia and albedo from a preliminary analysis of these data. Visible observations over the past 13 years have shown that the rotation period of 2P's nucleus increases by ~4 minutes per orbit [5,6], and that the light curve has a two-humped shape but that the humps have quite different amplitudes (e.g. [7]). Thus the equator-on view gave us the chance to further investigate 2P's rotation state and shape. We used the CSUSB Murillo Family Observatory 0.5-meter telescope [8], the NOAO Kitt Peak 2.1-meter telescope, and the MORIS instrument at NASA/IRTF to obtain R-band, time-series photometry of the nucleus. We will present new, preliminary constraints on the secular changes in the nucleus's spin state and on the nucleus's shape based on these new data. We thank the allocation committees of the IRTF and NOAO telescopes for granting the time used for this project. References: [1] Y. R. Fernandez et al. 2000, Icarus 147, 145. [2] M. S. Kelley et al. 2006, ApJ 651, 1256. [3] Y. R. Fernandez et al. 2008, 40th Meeting of the DPS, #16.24. [4] P. Abell et al. 2009, 41st Meeting of the DPS, #20.02. [5] B. E. A. Mueller et al. 2008, 40th Meeting of the DPS, #16.25. [6] N. H. Samarasinha and B. E. A

  2. Valence-bond quantum Monte Carlo algorithms defined on trees.

    PubMed

    Deschner, Andreas; Sørensen, Erik S

    2014-09-01

    We present a class of algorithms for performing valence-bond quantum Monte Carlo of quantum spin models. Valence-bond quantum Monte Carlo is a projective T=0 Monte Carlo method based on sampling of a set of operator strings that can be viewed as forming a treelike structure. The algorithms presented here utilize the notion of a worm that moves up and down this tree and changes the associated operator string. In quite general terms, we derive a set of equations whose solutions correspond to a whole class of algorithms. As specific examples of this class of algorithms, we focus on two cases. The bouncing worm algorithm, for which updates are always accepted by allowing the worm to bounce up and down the tree, and the driven worm algorithm, where a single parameter controls how far up the tree the worm reaches before turning around. The latter algorithm involves only a single bounce where the worm turns from going up the tree to going down. The presence of the control parameter necessitates the introduction of an acceptance probability for the update.

  3. Coupled-cluster based basis sets for valence correlation calculations

    NASA Astrophysics Data System (ADS)

    Claudino, Daniel; Gargano, Ricardo; Bartlett, Rodney J.

    2016-03-01

    Novel basis sets are generated that target the description of valence correlation in atoms H through Ar. The new contraction coefficients are obtained according to the Atomic Natural Orbital (ANO) procedure from CCSD(T) (coupled-cluster singles and doubles with perturbative triples correction) density matrices starting from the primitive functions of Dunning et al. [J. Chem. Phys. 90, 1007 (1989); ibid. 98, 1358 (1993); ibid. 100, 2975 (1993)] (correlation consistent polarized valence X-tuple zeta, cc-pVXZ). The exponents of the primitive Gaussian functions are subject to uniform scaling in order to ensure satisfaction of the virial theorem for the corresponding atoms. These new sets, named ANO-VT-XZ (Atomic Natural Orbital Virial Theorem X-tuple Zeta), have the same number of contracted functions as their cc-pVXZ counterparts in each subshell. The performance of these basis sets is assessed by the evaluation of the contraction errors in four distinct computations: correlation energies in atoms, probing the density in different regions of space via (-3 ≤ n ≤ 3) in atoms, correlation energies in diatomic molecules, and the quality of fitting potential energy curves as measured by spectroscopic constants. All energy calculations with ANO-VT-QZ have contraction errors within "chemical accuracy" of 1 kcal/mol, which is not true for cc-pVQZ, suggesting some improvement compared to the correlation consistent series of Dunning and co-workers.

  4. The effects of colour and valence on news evaluation.

    PubMed

    Kaspar, Kai; Grümmer, Melanie; Kießler, Antje; Neuß, Celina; Schröter, Franziska

    2015-11-12

    Research across different fields of psychology has reported effects of colour cues on a variety of cognitive processes. Especially, the colour red has been shown to have striking influences. In the context of media reception, however, colour effects have been widely neglected so far. This study made a first step in this direction by investigating the effects of the colour red (compared with blue and grey) on the way news articles are evaluated. Two types of news were framed by a coloured border while the valence of the news content additionally varied. Based on 369 participants who read and evaluated the news articles online, we observed effects for colour cues and news valence in the absence of an interaction effect, indicating that the colour red induced approach motivation. However, only the contrast between red and grey reached statistical significance, indicating that chromatic and achromatic colours may differ in their perceived visual saliency. Overall, these results provide an important complement to previous studies and have practical implications for media researchers and producers.

  5. Valence-state reflectometry of complex oxide heterointerfaces

    SciTech Connect

    Hamann-Borrero, Jorge E.; Macke, Sebastian; Choi, Woo Seok; Sutarto, Ronny; He, Feizhou; Radi, Abdullah; Elfimov, Ilya; Green, Robert J.; Haverkort, Maurits W.; Zabolotnyy, Volodymyr B.; Lee, Ho Nyung; Sawatzky, George A.; Hinkov, Vladimir

    2016-09-16

    Emergent phenomena in transition-metal-oxide heterostructures such as interface superconductivity and magnetism have been attributed to electronic reconstruction, which, however, is difficult to detect and characterise. Here we overcome the associated difficulties to simultaneously address the electronic degrees of freedom and distinguish interface from bulk effects by implementing a novel approach to resonant X-ray reflectivity (RXR). Our RXR study of the chemical and valance profiles along the polar (001) direction of a LaCoO3 film on NdGaO3 reveals a pronounced valence-state reconstruction from Co3+ in the bulk to Co2+ at the surface, with an areal density close to 0.5 Co2+ ions per unit cell. An identical film capped with polar (001) LaAlO3 maintains the Co3+ valence over its entire thickness. As a result, we interpret this as evidence for electronic reconstruction in the uncapped film, involving the transfer of 0.5e per unit cell to the subsurface CoO2 layer at its LaO-terminated polar surface.

  6. Valence-state reflectometry of complex oxide heterointerfaces

    DOE PAGES

    Hamann-Borrero, Jorge E.; Macke, Sebastian; Choi, Woo Seok; ...

    2016-09-16

    Emergent phenomena in transition-metal-oxide heterostructures such as interface superconductivity and magnetism have been attributed to electronic reconstruction, which, however, is difficult to detect and characterise. Here we overcome the associated difficulties to simultaneously address the electronic degrees of freedom and distinguish interface from bulk effects by implementing a novel approach to resonant X-ray reflectivity (RXR). Our RXR study of the chemical and valance profiles along the polar (001) direction of a LaCoO3 film on NdGaO3 reveals a pronounced valence-state reconstruction from Co3+ in the bulk to Co2+ at the surface, with an areal density close to 0.5 Co2+ ions permore » unit cell. An identical film capped with polar (001) LaAlO3 maintains the Co3+ valence over its entire thickness. As a result, we interpret this as evidence for electronic reconstruction in the uncapped film, involving the transfer of 0.5e– per unit cell to the subsurface CoO2 layer at its LaO-terminated polar surface.« less

  7. Energetic Landscape of MDM2-p53 Interactions by Computational Mutagenesis of the MDM2-p53 Interaction.

    PubMed

    Thayer, Kelly M; Beyer, George A

    2016-01-01

    The ubiquitin ligase MDM2, a principle regulator of the tumor suppressor p53, plays an integral role in regulating cellular levels of p53 and thus a prominent role in current cancer research. Computational analysis used MUMBO to rotamerize the MDM2-p53 crystal structure 1YCR to obtain an exhaustive search of point mutations, resulting in the calculation of the ΔΔG comprehensive energy landscape for the p53-bound regulator. The results herein have revealed a set of residues R65-E69 on MDM2 proximal to the p53 hydrophobic binding pocket that exhibited an energetic profile deviating significantly from similar residues elsewhere in the protein. In light of the continued search for novel competitive inhibitors for MDM2, we discuss possible implications of our findings on the drug discovery field.

  8. Kinetics of an oxygen – iodine active medium with iodine atoms optically pumped on the {sup 2}P{sub 1/2} – {sup 2}P{sub 3/2} transition

    SciTech Connect

    Zagidullin, M V; Azyazov, V N; Malyshev, M S

    2015-08-31

    The kinetics of the processes occurring in an O{sub 2} – I{sub 2} – He – H{sub 2}O gas flow in which photodissociation of molecular iodine at a wavelength close to 500 nm and excitation of atomic iodine on the {sup 2}P{sub 1/2} – {sup 2}P{sub 3/2} transition by narrow-band radiation near 1315 nm are implemented successively has been analysed. It is shown that implementation of these processes allows one to form an oxygen – iodine medium with a high degree of dissociation of molecular iodine and a relative content of singlet oxygen O{sub 2}(a{sup 1}Δ) exceeding 10%. Having formed a supersonic gas flow with a temperature ∼100 K from this medium, one can reach a small-signal gain of about 10{sup -2} cm{sup -1} on the {sup 2}P{sub 1/2} – {sup 2}P{sub 3/2} transition in iodine atoms. The specific power per unit flow cross section in the oxygen – iodine laser with this active medium may reach ∼100 W cm{sup -2}. (active media)

  9. A renal metanephric adenoma showing both a 2p16e24 deletion and BRAF V600E mutation: a synergistic role for a tumor suppressor gene on chromosome 2p and BRAF activation?

    PubMed

    Dadone, Bérengère; Ambrosetti, Damien; Carpentier, Xavier; Duranton-Tanneur, Valérie; Burel-Vandenbos, Fanny; Amiel, Jean; Pedeutour, Florence

    2013-01-01

    Metanephric adenomas (MAs) are rare benign tumors that may be difficult to recognize. Specific genetic anomalies might aid in diagnosis, but genomic data are limited and conflicting. Consistent mutations of the BRAF gene have been recently reported in MAs and could become useful as a discriminative marker among renal tumors. We report here a case of MA, showing both a BRAF V600E mutation and a segmental loss within bands 2p16 and 2p24 as the sole quantitative genomic anomaly. We compared the borders and size of the deleted region in our case to those of five cases of MAs previously reported. We identified a common minimal region containing 87 genes, among which several tumor suppressor genes could be candidate actors in the pathogenesis of MA. We ruled out MSH2 and MSH6 as target gene candidates, both located in the deleted region, on the basis of preserved expression and microsatellite sequence stability. Our study confirms the recurrence of a BRAF mutation and of 2p alterations in MAs. This first case showing simultaneous presence of a BRAF mutation and a 2p deletion raises the question of a synergistic role for these two anomalies in the pathogenesis of MAs.

  10. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    SciTech Connect

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  11. First-Order Structural Change Accompanied by Yb Valence Transition in YbInCu4

    NASA Astrophysics Data System (ADS)

    Tsutsui, Satoshi; Sugimoto, Kunihisa; Tsunoda, Ryoma; Hirose, Yusuke; Mito, Takeshi; Settai, Rikio; Mizumaki, Masaichiro

    2016-06-01

    A diffraction experiment using high-energy X-rays was carried out on YbInCu4. Below the Yb valence transition temperature, the splitting of Bragg peaks was detected in high-order reflections. No superlattice reflections accompanying the valence ordering were found below the transition temperature. These experimental findings indicate that a structural change from a cubic structure to a tetragonal structure without valence ordering occurs at the transition temperature. Such a structural change free from any valence ordering is difficult to understand only in terms of Yb valence degrees of freedom. This means that the structural change may be related to electronic symmetries such as quadrupolar degrees of freedom as well as to the change in Yb valence.

  12. Electronic structure of NaxCu1-xIn5S8 compounds: X-ray photoemission spectroscopy study and band structure calculations

    NASA Astrophysics Data System (ADS)

    Guillot-Deudon, Catherine; Harel, Sylvie; Mokrani, Arezki; Lafond, Alain; Barreau, Nicolas; Fernandez, Vincent; Kessler, John

    2008-12-01

    The aim of the present work is to complete a preliminary study concerning the electronic band structure investigations of NaxCu1-xIn5S8 compounds with 0≤x≤1 , which are expected to be formed at the Cu(In,Ga)Se2/In2S3 interface. The band structure calculations demonstrate that for the compounds containing both Na and Cu, as the Cu content increases the band gap tends to decrease, and x-ray photoemission spectroscopy measurements show that this variation is mainly due to valence-band-maximum shift along the solid solution. The band gap strongly depends on the nature of the monovalent cation, and the band structure calculations demonstrate that the d electrons of copper are responsible for the shift of the valence band. In addition, it is worth noting that the Cu-containing compounds have indirect gaps.

  13. Band alignment at the interface of PbTe/SnTe heterojunction determined by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Shu, Tianyu; Ye, Zhenyu; Lu, Pengqi; Chen, Lu; Xu, Gangyi; Zhou, Jie; Wu, Huizhen

    2016-11-01

    We report the determination of band alignment of PbTe/SnTe (111) heterojunction interfaces using X-ray photoelectron spectroscopy (XPS). Multiple core levels of Pb and Sn were utilized to determine the valence band offset (VBO) of the heterojunction. The XPS result shows a type-III band alignment with the VBO of 1.37+/- 0.18 \\text{eV} and the conduction band offset (CBO) of 1.23+/- 0.18 \\text{eV} . The experimental determination of the band alignment of the PbTe/SnTe heterojunction shall benefit the improvement of PbTe/SnTe-related optoelectronic and electronic devices.

  14. 16O + 16O molecular structures of positive- and negative-parity superdeformed bands in 34S

    NASA Astrophysics Data System (ADS)

    Taniguchi, Yasutaka

    2016-05-01

    The structures of excited states in 34S are investigated using the antisymmetrized molecular dynamics and generator coordinate method(GCM). The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity super de formed(SD) bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16O + 16O + two valence neutrons in molecular orbitals around the two 16O cores in a cluster picture. The configurations of the two valence neutrons are δ2 and π2 for the positive-parity SD bands and π1δ1 for the negative parity SD band.

  15. Valence and inner-valence shell dissociative photoionization of CO in the 26-33 eV range. I. Ion-electron kinetic energy correlation and laboratory frame photoemission

    NASA Astrophysics Data System (ADS)

    Lebech, M.; Houver, J. C.; Dowek, D.

    2009-05-01

    The (VA +, Ve, ê) vector correlation method, combining imaging and time-of-flight resolved electron-ion coincidence techniques, is used to probe dissociative photoionization (DPI) of CO induced by vacuum ultra violet linearly or circularly polarized synchrotron radiation in the 26-33 eV photon excitation energy range. It provides original information about both the photoionization dynamics of the CO molecule and the dissociation dynamics of the CO+ molecular ions. The explored region corresponds to valence and inner-valence CO+ ionic states, which involve doubly or multiply excited electronic configurations. In this paper I we identify up to 17 DPI reaction pathways by the position of the intermediate CO+ molecular states in the Franck-Condon region and the (C++O) or (O++C) dissociation limits to which they correlate. For these processes we report the laboratory frame βC+/O+ and βe asymmetry parameters as well as the relative branching ratios in selected binding energy bands. The I(χ,θe,φe) molecular frame photoelectron angular distributions for selected PI processes will be reported in a companion paper II and compared with multichannel Schwinger configuration interaction ab initio calculations of these observables.

  16. Mixed-valence states of 11, 1111-dialkyl- and 11, 1111-bis(methylbenzyl)biferrocenium triiodides

    NASA Astrophysics Data System (ADS)

    Nakashima, Satoru; Masuda, Yuichi; Motoyama, Izumi; Sano, Hirotoshi

    1988-02-01

    It was found that the packing of cations and anions influences the electronic structures of mixed-valence binuclear ferrocene derivatives. Temperature-dependence of the mixed-valence state of 11, 1111-diisobutylbiferrocenium triiodide was observed in a crystalline state, whereas only a trapped-valence state was found in a dispersed state. The packing effect was also observed for a series of 11, 1111-dialkyl- and 11, 1111-bis(methylbenzyl)biferrocenium triiodides by means of ESR spectroscopy.

  17. In-medium pion valence distributions in a light-front model

    NASA Astrophysics Data System (ADS)

    de Melo, J. P. B. C.; Tsushima, K.; Ahmed, I.

    2017-03-01

    Pion valence distributions in nuclear medium and vacuum are studied in a light-front constituent quark model. The in-medium input for studying the pion properties is calculated by the quark-meson coupling model. We find that the in-medium pion valence distribution, as well as the in-medium pion valence wave function, are substantially modified at normal nuclear matter density, due to the reduction in the pion decay constant.

  18. Migration of Dust Particles from Comet 2P Encke

    NASA Technical Reports Server (NTRS)

    Ipatov, S. I.

    2003-01-01

    We investigated the migration of dust particles under the gravitational influence of all planets (except for Pluto), radiation pressure, Poynting-Robertson drag and solar wind drag for Beta equal to 0.002, 0.004, 0.01, 0.05, 0.1, 0.2, and 0.4. For silicate particles such values of Beta correspond to diameters equal to about 200, 100, 40, 9, 4, 2, and 1 microns, respectively. We used the Bulirsh-Stoer method of integration, and the relative error per integration step was taken to be less than lo-'. Initial orbits of the particles were close to the orbit of Comet 2P Encke. We considered initial particles near perihelion (runs denoted as Delta tsub o, = 0), near aphelion (Delta tsub o, = 0.5), and also studied their initial positions when the comet moved for Pa/4 after perihelion passage (such runs are denoted as Delta tsub o, =i 0.25), where Pa is the period of the comet. Variations in time T when perihelion was passed was varied with a step 0.1 day for series 'S' and with a step 1 day for series 'L'. For each Beta we considered N = 101 particles for "S" runs and 150 particles for "L" runs.

  19. Multicast Services over Structured P2P Networks

    NASA Astrophysics Data System (ADS)

    Manzanares-Lopez, Pilar; Malgosa-Sanahuja, Josemaria; Muñoz-Gea, Juan Pedro; Sanchez-Aarnoutse, Juan Carlos

    IP multicast functionality was defined as an efficient method to transmit datagrams to a group of receivers. However, although a lot of research work has been done in this technology, IP multicast has not spread out over the Internet as much as expected, reducing its use for local environments (i.e., LANs). The peer-to-peer networks paradigm can be used to overcome the IP multicast limitations. In this new scenario (called Application Layer Multicast or ALM), the multicast functionality is changed from network to application layer. Although ALM solution can be classified into unstructured and structured solutions, the last ones are the best option to offer multicast services due to the effectiveness in the discovery nodes, their mathematical definition and the totally decentralized management. In this chapter we are going to offer a tutorial of the main structured ALM solutions, but introducing two novelties with respect to related surveys in the past: first, the systematic description of most representative structured ALM solution in OverSim (one of the most popular p2p simulation frameworks). Second, some simulation comparatives between flooding-based and tree-based structured ALM solution are also presented.

  20. Carrier Lifetimes in a I I I -V -N Intermediate-Band Semiconductor

    NASA Astrophysics Data System (ADS)

    Heyman, J. N.; Schwartzberg, A. M.; Yu, K. M.; Luce, A. V.; Dubon, O. D.; Kuang, Y. J.; Tu, C. W.; Walukiewicz, W.

    2017-01-01

    We use transient absorption spectroscopy to measure carrier lifetimes in the multiband semiconductor GaPyAs1 -x -yNx . These measurements probe the electron populations in the conduction band, intermediate band, and valence band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 , we find that the electron population in the conduction band decays exponentially with a time constant τCB=23 ps . The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r =2 ×10-8 cm3/s . In our experiment, an optical pump pulse excites electrons from the valence band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption is probed with a delayed white-light pulse. We model the optical properties of our samples using the band anticrossing model to extract carrier densities as a function of time. These results not only identify the short minority-carrier lifetime as a key factor affecting the performance of GaPyAs1 -x -yNx -based intermediate-band solar cells but also provide guidance on ways to address this issue.

  1. Theoretical performance of solar cell based on mini-bands quantum dots

    SciTech Connect

    Aly, Abou El-Maaty M. E-mail: ashraf.nasr@gmail.com; Nasr, A. E-mail: ashraf.nasr@gmail.com

    2014-03-21

    The tremendous amount of research in solar energy is directed toward intermediate band solar cell for its advantages compared with the conventional solar cell. The latter has lower efficiency because the photons have lower energy than the bandgap energy and cannot excite mobile carriers from the valence band to the conduction band. On the other hand, if mini intermediate band is introduced between the valence and conduction bands, then the smaller energy photons can be used to promote charge carriers transfer to the conduction band and thereby the total current increases while maintaining a large open circuit voltage. In this article, the influence of the new band on the power conversion efficiency for structure of quantum dots intermediate band solar cell is theoretically investigated and studied. The time-independent Schrödinger equation is used to determine the optimum width and location of the intermediate band. Accordingly, achievement of a maximum efficiency by changing the width of quantum dots and barrier distances is studied. Theoretical determination of the power conversion efficiency under the two different ranges of QD width is presented. From the obtained results, the maximum power conversion efficiency is about 70.42%. It is carried out for simple cubic quantum dot crystal under fully concentrated light. It is strongly dependent on the width of quantum dots and barrier distances.

  2. DMFT Study for Valence Fluctuations in the Extended Periodic Anderson Model

    NASA Astrophysics Data System (ADS)

    Shinzaki, Ryu; Nasu, Joji; Koga, Akihisa

    2016-02-01

    We study valence fluctuations at finite temperatures in the extended periodic Anderson model, where the Coulomb interaction between conduction and localized f-electrons is taken into account, using dynamical mean-field theory combined with the continuous-time quantum Monte Carlo (CT-QMC) method. The valence transition with the hysteresis is clearly found, indicating the first-order phase transition between the Kondo and mixed-valence states. We demonstrate that spin correlation rapidly develops when the system approaches the valence transition point. The comparison of the impurity solvers, the CT-QMC, non-crossing approximation, and one-crossing approximation, is also addressed.

  3. Modified extended Hückel band calculations on conjugated polymers

    NASA Astrophysics Data System (ADS)

    Hong, Sung Y.; Marynick, Dennis S.

    1992-04-01

    In order to more accurately predict band gaps, corresponding to π-π* transitions of one-dimensional conducting polymers, the formula for the off-diagonal elements, Hαβij in the extended Hückel (EH) band calculation method was modified according to the form Hαβij=K1(Hααii +Hββjj)exp(-K2Rαβ) Sαβij. Parametrizations for the constants K1 and K2 were performed so as to yield reasonable band gaps for the pure hydrocarbon polymers trans-polyacetylene, poly(para-phenylene), and poly(phenylene vinylene). Since there is a large difference in bond alternations along polymeric chains between ab initio and modified neglect of diatomic overlap optimized geometries, especially for heterocyclic polymers, the valence orbital exponents of oxygen, nitrogen, and sulfur were separately adjusted, depending on the chosen geometry, to reproduce the band gaps of polyfuran, polypyrrole, and polythiophene. It is found that geometrical relaxations in the presence of heteroatoms strongly affect the C1-C4 interactions as well as bond alternations, which in turn affect the band gap. Modified EH band calculations were performed for various polymers. The predicted band gaps had average errors of ca. 10% (less than 0.3 eV) compared to the experimental values, and the method produced band structures consistent with electron-energy-loss spectroscopic observations.

  4. Hydrogen-carbon complexes and the blue luminescence band in GaN

    NASA Astrophysics Data System (ADS)

    Demchenko, Denis; Diallo, Ibrahima; Reshchikov, Michael

    The blue luminescence band with a maximum at 3.0 eV and the zero-phonon line at 3.33 eV (labeled BL2) is observed in high-resistivity GaN. Under prolonged ultraviolet (UV) light exposure, the BL2 band transforms into the yellow luminescence (YL) band with a maximum at 2.2 eV. Our calculations using hybrid functionals suggest that the BL2 band is related to a hydrogen-carbon defect complex, most likely CNON-Hi. The complex creates defect transition level close to the valence band, which is responsible for the BL2 band. Under UV illumination the complex dissociates, leaving as byproduct the source of the YL band (CNON or CN) and interstitial hydrogen. The work was supported by the National Science Foundation (DMR-1410125) and the Thomas F. and Kate Miller Jeffress Memorial Trust.

  5. Crystal chemistry, band engineering, and photocatalytic activity of the LiNb3O8-CuNb3O8 solid solution.

    PubMed

    Sahoo, Prangya Parimita; Maggard, Paul A

    2013-04-15

    A new solid solution has been prepared in the system LiNb3O8-CuNb3O8, and the impacts of chemical composition and crystal structure have been investigated for the resulting band gap sizes and photocatalytic activities for water reduction to hydrogen under visible light. All members of the solid solution were synthesized by solid-state methods within evacuated fused-silica vessels, and their phase purities were confirmed via powder X-ray diffraction techniques (space group P2(1)/a, a = 15.264(5)-15.367(1) Å, b = 5.031(3)-5.070(1) Å, c = 7.456(1)-7.536(8) Å, and β = 107.35(1)-107.14(8)°, for 0 ≤ x ≤ 1). Rietveld refinements were carried out for the x = 0.09, 0.50, and 0.70 members of the solid solution, which reveal the prevailing isostructurality of the continuous solid solution. The structure consists of chains of (Li/Cu)O6 and NbO6 octahedra. The optical band gap size across the solid solution exhibits a significant red-shift from ∼3.89 eV (direct) to ∼1.45 eV and ∼1.27 eV (direct and indirect) with increasing Cu(I) content, consistent with the change in sample color from white to dark brown to black. Electronic structure calculations based on density-functional theory methods reveal the rapid formation of a new Cu 3d(10)-based valence band that emerges higher in energy than the O 2p band. While the pure LiNb3O8 is a highly active UV-photocatalyst for water reduction, the Li(1-x)Cu(x)Nb3O8 solid is shown to be photocatalytically active under visible-light irradiation for water reduction to hydrogen.

  6. Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

    NASA Astrophysics Data System (ADS)

    Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

    2016-06-01

    We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

  7. Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Lee, Kyeongmi; Nomura, Kenji; Yanagi, Hiroshi; Kamiya, Toshio; Ikenaga, Eiji; Sugiyama, Takeharu; Kobayashi, Keisuke; Hosono, Hideo

    2012-08-01

    Although amorphous InGaZnO4 has intensively been studied for a semiconductor channel material of thin-film transistors in next-generation flat-panel displays, its electronic structure parameters have not been reported. In this work, the electron affinities (χ) and the ionization potentials (Ip) of crystalline and amorphous InGaZnO4 (c-IGZO and a-IGZO) were measured using bulk-sensitive hard x-ray photoelectron spectroscopy. First, the χ and Ip values of c-IGZO and a-IGZO thin films were estimated by aligning the Zn 2p3/2 core level energies to a literature value for ZnO, which provided χ = 3.90 eV and Ip = 7.58 eV for c-IGZO and 4.31 eV and 7.41 eV for a-IGZO. It was also confirmed that the escape depth of the photoelectrons excited by the photon energy of 5950.2 eV is 3.3 nm for a-IGZO and large enough for directly measuring the interface electronic structure using a-IGZO/c-Si heterojunctions. It provided the valence band offset of ˜2.3 eV, which agrees well with the above data. The present results substantiate that the a-IGZO/c-Si interface follows well the Schottky-Mott rule.

  8. Acid sensitive background potassium channels K2P3.1 and K2P9.1 undergo rapid dynamin-dependent endocytosis

    PubMed Central

    Mant, Alexandra; Williams, Sarah E; O'Kelly, Ita

    2013-01-01

    Acid-sensitive, two-pore domain potassium channels, K2P3.1 and K2P9.1, are implicated in cardiac and nervous tissue responses to hormones, neurotransmitters and drugs. K2P3.1 and K2P9.1 leak potassium from the cell at rest and directly impact membrane potential. Hence altering channel number on the cell surface drives changes in cellular electrical properties. The rate of K2P3.1 and K2P9.1 delivery to and recovery from the plasma membrane determines both channel number at the cell surface and potassium leak from cells. This study examines the endocytosis of K2P3.1 and K2P9.1. Plasma membrane biotinylation was used to follow the fate of internalized GFP-tagged rat K2P3.1 and K2P9.1 transiently expressed in HeLa cells. Confocal fluorescence images were analyzed using Imaris software, which revealed that both channels are endocytosed by a dynamin-dependent mechanism and over the course of 60 min, move progressively toward the nucleus. Endogenous endocytosis of human K2P3.1 and K2P9.1 was examined in the lung carcinoma cell line, A549. Endogenous channels are endocytosed over a similar time-scale to the channels expressed transiently in HeLa cells. These findings both validate the use of recombinant systems and identify an endogenous model system in which K2P3.1 and K2P9.1 trafficking can be further studied. PMID:23807092

  9. Acid sensitive background potassium channels K2P3.1 and K2P9.1 undergo rapid dynamin-dependent endocytosis.

    PubMed

    Mant, Alexandra; Williams, Sarah; O'Kelly, Ita

    2013-01-01

    Acid-sensitive, two-pore domain potassium channels, K(2P)3.1 and K(2P)9.1, are implicated in cardiac and nervous tissue responses to hormones, neurotransmitters and drugs. K(2P)3.1 and K(2P)9.1 leak potassium from the cell at rest and directly impact membrane potential. Hence altering channel number on the cell surface drives changes in cellular electrical properties. The rate of K(2P)3.1 and K(2P)9.1 delivery to and recovery from the plasma membrane determines both channel number at the cell surface and potassium leak from cells. This study examines the endocytosis of K(2P)3.1 and K(2P)9.1. Plasma membrane biotinylation was used to follow the fate of internalized GFP-tagged rat K(2P)3.1 and K(2P)9.1 transiently expressed in HeLa cells. Confocal fluorescence images were analyzed using Imaris software, which revealed that both channels are endocytosed by a dynamin-dependent mechanism and over the course of 60 min, move progressively toward the nucleus. Endogenous endocytosis of human K(2P)3.1 and K(2P)9.1 was examined in the lung carcinoma cell line, A549. Endogenous channels are endocytosed over a similar time-scale to the channels expressed transiently in HeLa cells. These findings both validate the use of recombinant systems and identify an endogenous model system in which K(2P)3.1 and K(2P)9.1 trafficking can be further studied.

  10. The casein kinases Yck1p and Yck2p act in the secretory pathway, in part, by regulating the Rab exchange factor Sec2p

    PubMed Central

    Stalder, Danièle; Novick, Peter J.

    2016-01-01

    Sec2p is a guanine nucleotide exchange factor that activates Sec4p, the final Rab GTPase of the yeast secretory pathway. Sec2p is recruited to secretory vesicles by the upstream Rab Ypt32p acting in concert with phosphatidylinositol-4-phosphate (PI(4)P). Sec2p also binds to the Sec4p effector Sec15p, yet Ypt32p and Sec15p compete against each other for binding to Sec2p. We report here that the redundant casein kinases Yck1p and Yck2p phosphorylate sites within the Ypt32p/Sec15p binding region and in doing so promote binding to Sec15p and inhibit binding to Ypt32p. We show that Yck2p binds to the autoinhibitory domain of Sec2p, adjacent to the PI(4)P binding site, and that addition of PI(4)P inhibits Sec2p phosphorylation by Yck2p. Loss of Yck1p and Yck2p function leads to accumulation of an intracellular pool of the secreted glucanase Bgl2p, as well as to accumulation of Golgi-related structures in the cytoplasm. We propose that Sec2p is phosphorylated after it has been recruited to secretory vesicles and the level of PI(4)P has been reduced. This promotes Sec2p function by stimulating its interaction with Sec15p. Finally, Sec2p is dephosphorylated very late in the exocytic reaction to facilitate recycling. PMID:26700316

  11. Integral Cross Sections for Electron Impact Excitation of Rydberg and Valence States of Molecular Nitrogen

    NASA Astrophysics Data System (ADS)

    Malone, C. P.; Johnson, P. V.; Kanik, I.; Liu, X.; Ajdari, B.; Khakoo, M. A.

    2012-06-01

    We present integral cross sections (ICSs) for electron impact excitation of N2 out of the ground state X (v=0), to the b, c3, o3, b', c'4, G, and F electronic states at incident energies ranging between 17.5 eV and 100 eV. The ICSs were derived from the differential cross sections (DCSs) of Khakoo et al. [Phys. Rev. A 77, 012704 (2008)], which were obtained by unfolding energy loss spectra in the ˜12-13.82 eV range. Recently, Heays et al. [Phys. Rev. A 85, 012705 (2012)] measured comparable higher resolution energy loss spectra, with a significantly different apparatus configuration, but in agreement with the Khakoo et al. (2008) spectra. This latter additional effort provided further confidence in the accuracy of the DCSs upon which the present ICS results are based. Of the higher-lying states studied, five are singlet states that radiate to the ground state via dipole allowed transitions. These include the b and b' valence states and the c'4 Rydberg state that give rise to the Birge-Hopfield I, II, and Carroll-Yoshino bands, respectively, all of which are observed in the atmospheres of Earth, Titan, and Triton. The c3 and o3 Rydberg states give rise to the Worley-Jenkins and Worley series of Rydberg bands, respectively. However, these emissions are not readily observed since predissociation for the c3 and o3 states approaches 100%. As such, direct electron excitation measurements, such as those presented here are superior to standard (spontaneous) emission based measurements in this case.

  12. The valence-fluctuating ground state of plutonium.

    PubMed

    Janoschek, Marc; Das, Pinaki; Chakrabarti, Bismayan; Abernathy, Douglas L; Lumsden, Mark D; Lawrence, John M; Thompson, Joe D; Lander, Gerard H; Mitchell, Jeremy N; Richmond, Scott; Ramos, Mike; Trouw, Frans; Zhu, Jian-Xin; Haule, Kristjan; Kotliar, Gabriel; Bauer, Eric D

    2015-07-01

    A central issue in material science is to obtain understanding of the electronic correlations that control complex materials. Such electronic correlations frequently arise because of the competition of localized and itinerant electronic degrees of freedom. Although the respective limits of well-localized or entirely itinerant ground states are well understood, the intermediate regime that controls the functional properties of complex materials continues to challenge theoretical understanding. We have used neutron spectroscopy to investigate plutonium, which is a prototypical material at the brink between bonding and nonbonding configurations. Our study reveals that the ground state of plutonium is governed by valence fluctuations, that is, a quantum mechanical superposition of localized and itinerant electronic configurations as recently predicted by dynamical mean field theory. Our results not only resolve the long-standing controversy between experiment and theory on plutonium's magnetism but also suggest an improved understanding of the effects of such electronic dichotomy in complex materials.

  13. The valence-fluctuating ground state of plutonium

    PubMed Central

    Janoschek, Marc; Das, Pinaki; Chakrabarti, Bismayan; Abernathy, Douglas L.; Lumsden, Mark D.; Lawrence, John M.; Thompson, Joe D.; Lander, Gerard H.; Mitchell, Jeremy N.; Richmond, Scott; Ramos, Mike; Trouw, Frans; Zhu, Jian-Xin; Haule, Kristjan; Kotliar, Gabriel; Bauer, Eric D.

    2015-01-01

    A central issue in material science is to obtain understanding of the electronic correlations that control complex materials. Such electronic correlations frequently arise because of the competition of localized and itinerant electronic degrees of freedom. Although the respective limits of well-localized or entirely itinerant ground states are well understood, the intermediate regime that controls the functional properties of complex materials continues to challenge theoretical understanding. We have used neutron spectroscopy to investigate plutonium, which is a prototypical material at the brink between bonding and nonbonding configurations. Our study reveals that the ground state of plutonium is governed by valence fluctuations, that is, a quantum mechanical superposition of localized and itinerant electronic configurations as recently predicted by dynamical mean field theory. Our results not only resolve the long-standing controversy between experiment and theory on plutonium’s magnetism but also suggest an improved understanding of the effects of such electronic dichotomy in complex materials. PMID:26601219

  14. Adsorption mechanism and valency of catechol-functionalized hyperbranched polyglycerols

    PubMed Central

    Krysiak, Stefanie; Wei, Qiang; Rischka, Klaus; Hartwig, Andreas; Haag, Rainer

    2015-01-01

    Summary Nature often serves as a model system for developing new adhesives. In aqueous environments, mussel-inspired adhesives are promising candidates. Understanding the mechanism of the extraordinarily strong adhesive bonds of the catechol group will likely aid in the development of adhesives. With this aim, we study the adhesion of catechol-based adhesives to metal oxides on the molecular level using atomic force microscopy (AFM). The comparison of single catechols (dopamine) with multiple catechols on hyperbranched polyglycerols (hPG) at various pH and dwell times allowed us to further increase our understanding. In particular, we were able to elucidate how to achieve strong bonds of different valency. It was concluded that hyperbranched polyglycerols with added catechol end groups are promising candidates for durable surface coatings. PMID:26150898

  15. The valence-fluctuating ground state of plutonium

    SciTech Connect

    Janoschek, Marc; Das, Pinaki; Chakrabarti, Bismayan; Abernathy, Douglas L.; Lumsden, Mark D.; Lawrence, John M.; Thompson, Joe D.; Lander, Gerard H.; Mitchell, Jeremy N.; Richmond, Scott; Ramos, Mike; Trouw, Frans; Zhu, Jian -Xin; Haule, Kristjan; Kotliar, Gabriel; Bauer, Eric D.

    2015-07-10

    A central issue in material science is to obtain understanding of the electronic correlations that control complex materials. Such electronic correlations frequently arise because of the competition of localized and itinerant electronic degrees of freedom. Although the respective limits of well-localized or entirely itinerant ground states are well understood, the intermediate regime that controls the functional properties of complex materials continues to challenge theoretical understanding. We have used neutron spectroscopy to investigate plutonium, which is a prototypical material at the brink between bonding and nonbonding configurations. In addition, our study reveals that the ground state of plutonium is governed by valence fluctuations, that is, a quantum mechanical superposition of localized and itinerant electronic configurations as recently predicted by dynamical mean field theory. Our results not only resolve the long-standing controversy between experiment and theory on plutonium’s magnetism but also suggest an improved understanding of the effects of such electronic dichotomy in complex materials.

  16. Quantum electrodynamic corrections for valence electrons in Eka-Hg

    NASA Astrophysics Data System (ADS)

    Golovko, O. A.; Goidenko, I. A.; Tupitsyn, I. I.

    2008-05-01

    The quantum electrodynamic (QED) corrections to the coupling energy of valence electrons in heavy and superheavy nuclei are calculated in the effective local-potential approximation, as well as by the Hartree-Fock-Dirac self-consistent method. It is clearly shown that the contribution from the QED corrections is within the accuracy of modern calculations, which do not take into account QED effects. It is shown that, in certain cases, to exactly calculate the coupling energy of electrons in heavy and superheavy atoms, it is necessary to take into account the self-consistency, which shows that the inaccuracy of the use of the method of the effective local potential in calculations of QED effects can exceed 10%, which is also within the limits of calculations of the coupling energy without taking into account QED effects.

  17. Expectation modulates neural representations of valence throughout the human brain

    PubMed Central

    Ramayya, Ashwin G.; Pedisich, Isaac; Kahana, Michael J.

    2015-01-01

    The brain's sensitivity to unexpected gains or losses plays an important role in our ability to learn new behaviors (Rescorla and Wagner, 1972; Sutton and Barto, 1990). Recent work suggests that gains and losses are ubiquitously encoded throughout the human brain (Vickery et al., 2011), however, the extent to which reward expectation modulates these valence representations is not known. To address this question we analyzed recordings from 4,306 intracranially implanted electrodes in 39 neurosurgical patients as they performed a two-alternative probability learning task. Using high-frequency activity (HFA, 70-200 Hz) as an indicator of local firing rates, we found that expectation modulated reward-related neural activity in widespread brain regions, including regions that receive sparse inputs from midbrain dopaminergic neurons. The strength of unexpected gain signals predicted subjects’ abilities to encode stimulus-reward associations. Thus, neural signals that are functionally related to learning are widely distributed throughout the human brain. PMID:25937489

  18. Incautiously Optimistic: Positively-Valenced Cognitive Avoidance in Adult ADHD

    PubMed Central

    Knouse, Laura E.; Mitchell, John T.

    2015-01-01

    Clinicians who conduct cognitive-behavioral therapy (CBT) targeting attention-deficit/hyperactivity disorder (ADHD) in adulthood have noted that their patients sometimes verbalize overly positive automatic thoughts and set overly optimistic goals. These cognitions are frequently related to failure to engage in compensatory behavioral strategies emphasized in CBT. In this paper, we offer a functional analysis of this problematic pattern, positively-valenced cognitive avoidance, and suggest methods for addressing it within CBT for adult ADHD. We propose that maladaptive positive cognitions function to relieve aversive emotions in the short-term and are therefore negatively reinforced but that, in the long-term, they are associated with decreased likelihood of active coping and increased patterns of behavioral avoidance. Drawing on techniques from Behavioral Activation (BA), we offer a case example to illustrate these concepts and describe step-by-step methods for clinicians to help patients recognize avoidant patterns and engage in more active coping. PMID:25908901

  19. Colour and emotion: children also associate red with negative valence.

    PubMed

    Gil, Sandrine; Le Bigot, Ludovic

    2016-11-01

    The association of colour with emotion constitutes a growing field of research, as it can affect how humans process their environment. Although there has been increasing interest in the association of red with negative valence in adults, little is known about how it develops. We therefore tested the red-negative association in children for the first time. Children aged 5-10 years performed a face categorization task in the form of a card-sorting task. They had to judge whether ambiguous faces shown against three different colour backgrounds (red, grey, green) seemed to 'feel good' or 'feel bad'. Results of logistic mixed models showed that - as previously demonstrated in adults - children across the age range provided significantly more 'feel bad' responses when the faces were given a red background. This finding is discussed in relation to colour-emotion association theories.

  20. Negativity in the generalized Valence Bond Solid state

    NASA Astrophysics Data System (ADS)

    Santos, Raul A.; Korepin, V.

    2016-11-01

    Using a graphical presentation of the spin S one-dimensional Valence Bond Solid (VBS) state, based on the representation theory of the {it{SU}}(2) Lie algebra of spins, we compute the spectrum of a mixed-state reduced density matrix. This mixed state of two blocks of spins A and B is obtained by tracing out the spins outside A and B, in the pure VBS state density matrix. We find in particular that the negativity of the mixed state is nonzero only for adjacent subsystems. The method introduced here can be generalized to the computation of entanglement properties in Levin-Wen models, that possess a similar algebraic structure to the VBS state in the ground state.

  1. Time flies with music whatever its emotional valence.

    PubMed

    Droit-Volet, Sylvie; Bigand, Emmanuel; Ramos, Danilo; Bueno, José Lino Oliveira

    2010-10-01

    The present study used a temporal bisection task to investigate whether music affects time estimation differently from a matched auditory neutral stimulus, and whether the emotional valence of the musical stimuli (i.e., sad vs. happy music) modulates this effect. The results showed that, compared to sine wave control music, music presented in a major (happy) or a minor (sad) key shifted the bisection function toward the right, thus increasing the bisection point value (point of subjective equality). This indicates that the duration of a melody is judged shorter than that of a non-melodic control stimulus, thus confirming that "time flies" when we listen to music. Nevertheless, sensitivity to time was similar for all the auditory stimuli. Furthermore, the temporal bisection functions did not differ as a function of musical mode.

  2. Ab initio valence-space theory for exotic nuclei

    NASA Astrophysics Data System (ADS)

    Holt, Jason

    2015-10-01

    Recent advances in ab initio nuclear structure theory have led to groundbreaking predictions in the exotic medium-mass region, from the location of the neutron dripline to the emergence of new magic numbers far from stability. Playing a key role in this progress has been the development of sophisticated many-body techniques and chiral effective field theory, which provides a systematic basis for consistent many-nucleon forces and electroweak currents. Within the context of valence-space Hamiltonians derived from the nonperturbative in-medium similarity renormalization group (IM-SRG) approach, I will discuss the importance of 3N forces in understanding and making new discoveries in the exotic sd -shell region. Beginning in oxygen, we find that the effects of 3N forces are decisive in explaining why 24O is the last bound oxygen isotope, validating first predictions of this phenomenon from several years ago. Furthermore, 3N forces play a key role in reproducing spectroscopy, including signatures of doubly magic 22,24O, and physics beyond the dripline. Similar improvements are obtained in new spectroscopic predictions for exotic fluorine and neon isotopes, where agreement with recent experimental data is competitive with state-of-the-art phenomenology. Finally, I will discuss first applications of the IM-SRG to effective valence-space operators, such as radii and E 0 transitions, as well as extensions to general operators crucial for our future understanding of electroweak processes, such as neutrinoless double-beta decay. This work was supported by NSERC and the NRC Canada.

  3. Dynamically Tracking Anxious Individuals' Affective Response to Valenced Information.

    PubMed

    Fua, Karl C; Teachman, Bethany A

    2017-03-30

    Past research has shown that an individual's feelings at any given moment reflect currently experienced stimuli as well as internal representations of similar past experiences. However, anxious individuals' affective reactions to streams of interrelated valenced information (vs. reactions to static stimuli that are arguably less ecologically valid) are rarely tracked. The present study provided a first examination of the newly developed Tracking Affect Ratings Over Time (TAROT) task to continuously assess anxious individuals' affective reactions to streams of information that systematically change valence. Undergraduate participants (N = 141) completed the TAROT task in which they listened to narratives containing positive, negative, and neutral physically- or socially-relevant events, and indicated how positive or negative they felt about the information they heard as each narrative unfolded. The present study provided preliminary evidence for the validity and reliability of the task. Within scenarios, participants higher (vs. lower) in anxiety showed many expected negative biases, reporting more negative mean ratings and overall summary ratings, changing their pattern of responding more quickly to negative events, and responding more negatively to neutral events. Furthermore, individuals higher (vs. lower) in anxiety tended to report more negative minimums during and after positive events, and less positive maximums after negative events. Together, findings indicate that positive events were less impactful for anxious individuals, whereas negative experiences had a particularly lasting impact on future affective responses. The TAROT task is able to efficiently capture a number of different cognitive biases, and may help clarify the mechanisms that underlie anxious individuals' biased negative processing. (PsycINFO Database Record

  4. A density functional for core-valence correlation energy

    NASA Astrophysics Data System (ADS)

    Ranasinghe, Duminda S.; Frisch, Michael J.; Petersson, George A.

    2015-12-01

    A density functional, ɛCV-DFT(ρc, ρv), describing the core-valence correlation energy has been constructed as a linear combination of ɛLY Pcorr(ρc), ɛV WN5corr(ρc, ρv), ɛPBEcorr(ρc, ρv), ɛSlaterex(ρc, ρv), ɛHCTHex(ρc, ρv), ɛHFex(ρc, ρv), and F CV -DFT (" separators=" N i , Z i ) , a function of the nuclear charges. This functional, with 6 adjustable parameters, reproduces (±0.27 kcal/mol rms error) a benchmark set of 194 chemical energy changes including 9 electron affinities, 18 ionization potentials, and 167 total atomization energies covering the first- and second-rows of the periodic table. This is almost twice the rms error (±0.16 kcal/mol) obtained with CCSD(T)/MTsmall calculations, but less than half the rms error (±0.65 kcal/mol) obtained with MP2/GTlargeXP calculations, and somewhat smaller than the rms error (±0.39 kcal/mol) obtained with CCSD/MTsmall calculations. The largest positive and negative errors from ɛCV-DFT(ρc, ρv) were 0.88 and -0.75 kcal/mol with the set of 194 core-valence energy changes ranging from +3.76 kcal/mol for the total atomization energy of propyne to -9.05 kcal/mol for the double ionization of Mg. Evaluation of the ɛCV-DFT(ρc, ρv) functional requires less time than a single SCF iteration, and the accuracy is adequate for any model chemistry based on the CCSD(T) level of theory.

  5. Resonance and aromaticity: an ab initio valence bond approach.

    PubMed

    Rashid, Zahid; van Lenthe, Joop H; Havenith, Remco W A

    2012-05-17

    Resonance energy is one of the criteria to measure aromaticity. The effect of the use of different orbital models is investigated in the calculated resonance energies of cyclic conjugated hydrocarbons within the framework of the ab initio Valence Bond Self-Consistent Field (VBSCF) method. The VB wave function for each system was constructed using a linear combination of the VB structures (spin functions), which closely resemble the Kekulé valence structures, and two types of orbitals, that is, strictly atomic (local) and delocalized atomic (delocal) p-orbitals, were used to describe the π-system. It is found that the Pauling-Wheland's resonance energy with nonorthogonal structures decreases, while the same with orthogonalized structures and the total mean resonance energy (the sum of the weighted off-diagonal contributions in the Hamiltonian matrix of orthogonalized structures) increase when delocal orbitals are used as compared to local p-orbitals. Analysis of the interactions between the different structures of a system shows that the resonance in the 6π electrons conjugated circuits have the largest contributions to the resonance energy. The VBSCF calculations also show that the extra stability of phenanthrene, a kinked benzenoid, as compared to its linear counterpart, anthracene, is a consequence of the resonance in the π-system rather than the H-H interaction in the bay region as suggested previously. Finally, the empirical parameters for the resonance interactions between different 4n+2 or 4n π electrons conjugated circuits, used in Randić's conjugated circuits theory or Herdon's semi-emprical VB approach, are quantified. These parameters have to be scaled by the structure coefficients (weights) of the contributing structures.

  6. Entropically patchy particles: engineering valence through shape entropy.

    PubMed

    van Anders, Greg; Ahmed, N Khalid; Smith, Ross; Engel, Michael; Glotzer, Sharon C

    2014-01-28

    Patchy particles are a popular paradigm for the design and synthesis of nanoparticles and colloids for self-assembly. In "traditional" patchy particles, anisotropic interactions arising from patterned coatings, functionalized molecules, DNA, and other enthalpic means create the possibility for directional binding of particles into higher-ordered structures. Although the anisotropic geometry of nonspherical particles contributes to the interaction patchiness through van der Waals, electrostatic, and other interactions, how particle shape contributes entropically to self-assembly is only now beginning to be understood. The directional nature of entropic forces has recently been elucidated. A recently proposed theoretical framework that defines and quantifies directional entropic forces demonstrates the anisotropic-that is, patchy-nature of these emergent, attractive forces. Here we introduce the notion of entropically patchy particles as the entropic counterpart to enthalpically patchy particles. Using three example "families" of shapes, we show how to modify entropic patchiness by introducing geometric features to the particles via shape operations so as to target specific crystal structures assembled here with Monte Carlo simulations. We quantify the emergent entropic valence via a potential of mean force and torque. We show that these forces are on the order of a few kBT at intermediate densities below the onset of crystallization. We generalize these shape operations to shape anisotropy dimensions, in analogy with the anisotropy dimensions introduced for enthalpically patchy particles. Our findings demonstrate that entropic patchiness and emergent valence provide a way of engineering directional bonding into nanoparticle systems, whether in the presence or absence of additional, non-entropic forces.

  7. Adjustable gastric banding (image)

    MedlinePlus

    ... normal digestive process. In this procedure, a hollow band made of special material is placed around the ... pouch and causes a feeling of fullness. The band can be tightened or loosened over time to ...

  8. Excited-state mixed valence in a diphenyl hydrazine cation: Spectroscopic consequences of coupling and transition dipole moment orientation.

    PubMed

    Lockard, Jenny V; Zink, Jeffrey I; Trieber Ii, Dwight A; Konradsson, Asgeir E; Weaver, Michael N; Nelsen, Stephen F

    2005-02-17

    A quantitative model of mixed-valence excited-state spectroscopy is developed and applied to 2,3-diphenyl-2,3-diazabicyclo[2.2.2]octane. The lowest-energy excited state of this molecule arises from a transition from the ground state, where the charge is located on the hydrazine bridge, to an excited state where the charge is associated with one phenyl group or the other. Coupling splits the absorption band into two components with the lower-energy component being the most intense. The sign of the coupling, derived by using a neighboring orbital model, is positive. The transition dipole moments consist of parallel and antiparallel vector components, and selection rules for each are derived. Bandwidths are caused by progressions in totally symmetric modes determined from resonance Raman spectroscopic analysis. The absorption, emission, and Raman spectra are fit simultaneously with one parameter set.

  9. Effect of variable valence impurities on the formation of bismuth-related optical centres in a silicate glass

    SciTech Connect

    Galagan, B I; Denker, B I; Lili Hu; Sverchkov, S E; Shulman, I L; Dianov, Evgenii M

    2012-10-31

    We have studied the effect of variable valence impurities (cerium and iron) on the formation of bismuth-related IR luminescence centres and the optical loss between 1000 and 1300 nm in a magnesium aluminosilicate glass. The results demonstrate that additional doping of the glass with ceria leads to effective bleaching in a wide spectral range, including the luminescence range of the bismuth centres. At the same time, ceria reduces the concentration of luminescence centres. Gamma irradiation of the glass bleached by cerium restores the luminescence centres but leads to a background loss in a wide spectral range. Iron is shown to be a very harmful impurity in bismuth-doped active media: even trace levels of iron prevent the formation of bismuth-related active centres in the glass and produce a strong, broad absorption band centred near 1 {mu}m. (luminescence of glasses)

  10. Extreme-Ultraviolet-Initated High-Order Harmonic Generation: Driving Inner-Valence Electrons Using Below-Threshold-Energy Extreme-Ultraviolet Light.

    PubMed

    Brown, A C; van der Hart, H W

    2016-08-26

    We propose a novel scheme for resolving the contribution of inner- and outer-valence electrons in extreme-ultraviolet (XUV)-initiated high-harmonic generation in neon. By probing the atom with a low-energy (below the 2s ionization threshold) ultrashort XUV pulse, the 2p electron is steered away from the core, while the 2s electron is enabled to describe recollision trajectories. By selectively suppressing the 2p recollision trajectories, we can resolve the contribution of the 2s electron to the high-harmonic spectrum. We apply the classical trajectory model to account for the contribution of the 2s electron, which allows for an intuitive understanding of the process.

  11. Extreme-Ultraviolet-Initated High-Order Harmonic Generation: Driving Inner-Valence Electrons Using Below-Threshold-Energy Extreme-Ultraviolet Light

    NASA Astrophysics Data System (ADS)

    Brown, A. C.; van der Hart, H. W.

    2016-08-01

    We propose a novel scheme for resolving the contribution of inner- and outer-valence electrons in extreme-ultraviolet (XUV)-initiated high-harmonic generation in neon. By probing the atom with a low-energy (below the 2 s ionization threshold) ultrashort XUV pulse, the 2 p electron is steered away from the core, while the 2 s electron is enabled to describe recollision trajectories. By selectively suppressing the 2 p recollision trajectories, we can resolve the contribution of the 2 s electron to the high-harmonic spectrum. We apply the classical trajectory model to account for the contribution of the 2 s electron, which allows for an intuitive understanding of the process.

  12. Trinuclear nickel complexes with triplesalen ligands: simultaneous occurrence of mixed valence and valence tautomerism in the oxidized species.

    PubMed

    Glaser, Thorsten; Heidemeier, Maik; Fröhlich, Roland; Hildebrandt, Peter; Bothe, Eberhart; Bill, Eckhard

    2005-07-25

    The coordination chemistries of the triple tetradentate triplesalen ligands H(6)talen, H(6)talen(t)(-)(Bu)(2), and H(6)talen(NO)(2) have been investigated with nickel(II). These triplesalen ligands provide three salen-like coordination environments bridged in a meta-phenylene arrangement by a phloroglucinol backbone. The structures of the complexes [(talen)Ni(II)(3)], [(talen(t)(-)(Bu)(2)Ni(II)(3)], and [(talen(NO)(2)Ni(II)(3)] have been determined by single-crystal X-ray diffraction. All three compounds are composed of neutral trinuclear complexes with square-planar coordinated Ni(II) ions in a salen-like coordination environment. Whereas the overall molecular structure of [(talen(NO)(2)Ni(II)(3)] is nearly planar, the structures of [(talen)Ni(II)(3)] and [(talen(t)(-)(Bu)(2)Ni(II)(3)] are bowl-shaped as a result of ligand folding. The strongest ligand folding occurs at the central nickel-phenolate bond of [(talen(t)(-)(Bu)(2)Ni(II)(3)], resulting in the formation of a chiral hemispherical pocket. The dependence of the physical properties by the substituents on the terminal phenolates has been studied by FTIR, resonance Raman, UV-vis-NIR absorption, and electrochemistry. The three nickel-salen subunits are electronically interacting via the pi system of the bridging phloroglucinol backbone. The strength of this interaction is mediated by two opposing effects: the electron density at the terminal phenolates and the folding of the ligand at the central phenolates. The parent complex [(talen)Ni(II)(3)] is irreversibly oxidized at 0.32 V versus ferrocenium/ferrocene (Fc(+)/Fc), whereas [(talen(t)(-)(Bu)2)Ni(II)(3)] and [(talen(NO)(2)Ni(II)(3)] exhibit reversible oxidations at 0.22 V versus Fc(+)/Fc and 0.52 V versus Fc(+)/Fc, respectively. The oxidized species [(talen(t)(-)(Bu)(2)Ni(3)](+) and [(talen(NO)(2)Ni(3)](+) undergo a valence-tautomeric transformation involving a Ni(III) and a phenoxyl radical species, as observed by EPR spectroscopy. Thus, these oxidized

  13. Enhancement of band gap and photoconductivity in gamma indium selenide due to swift heavy ion irradiation

    SciTech Connect

    Sreekumar, R.; Jayakrishnan, R.; Sudha Kartha, C.; Vijayakumar, K. P.; Khan, S. A.; Avasthi, D. K.

    2008-01-15

    {gamma}-In{sub 2}Se{sub 3} thin films prepared at different annealing temperatures ranging from 100 to 400 deg. C were irradiated using 90 MeV Si ions with a fluence of 2x10{sup 13} ions/cm{sup 2}. X-ray diffraction analysis proved that there is no considerable variation in structural properties of the films due to the swift heavy ion irradiation. However, photosensitivity and sheet resistance of the samples increased due to irradiation. It was observed that the sample, which had negative photoconductivity, exhibited positive photoconductivity, after irradiation. The negative photoconductivity was due to the combined effect of trapping of photoexcited electrons, at traps 1.42 and 1.26 eV, above the valence band along with destruction of the minority carriers, created during illumination, through recombination. Photoluminescence study revealed that the emission was due to the transition to a recombination center, which was 180 meV above the valence band. Optical absorption study proved that the defects present at 1.42 and 1.26 eV were annealed out by the ion beam irradiation. This allowed photoexcited carriers to reach conduction band, which resulted in positive photoconductivity. Optical absorption study also revealed that the band gap of the material could be increased by ion beam irradiation. The sample prepared at 400 deg. C had a band gap of 2 eV and this increased to 2.8 eV, after irradiation. The increase in optical band gap was attributed to the annihilation of localized defect bands, near the conduction and valence band edges, on irradiation. Thus, by ion beam irradiation, one could enhance photosensitivity as well as the optical band gap of {gamma}-In{sub 2}Se{sub 3}, making the material suitable for applications such as window layer in solar cells.

  14. Low Power Band to Band Tunnel Transistors

    DTIC Science & Technology

    2010-12-15

    the E-field and tunneling at the source- pocket junction you form a parasitic NPN + transistor and the injection mechanism of carriers into the...hypothesis that the 1000 ° C, 5s anneal split lead to a very wide pocket and the accidental formation of a NPN + transistor , while the 1000 ° C, 1s anneal...Low Power Band to Band Tunnel Transistors Anupama Bowonder Electrical Engineering and Computer Sciences University of California at Berkeley

  15. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

    PubMed Central

    Janicki, L.; Kunert, G.; Sawicki, M.; Piskorska-Hommel, E.; Gas, K.; Jakiela, R.; Hommel, D.; Kudrawiec, R.

    2017-01-01

    The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1−xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25–1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn2+/Mn3+ impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to −0.028 ± 0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures. PMID:28150798

  16. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

    NASA Astrophysics Data System (ADS)

    Janicki, L.; Kunert, G.; Sawicki, M.; Piskorska-Hommel, E.; Gas, K.; Jakiela, R.; Hommel, D.; Kudrawiec, R.

    2017-02-01

    The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1‑xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25–1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn2+/Mn3+ impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to ‑0.028 ± 0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.

  17. Band-engineered SrTiO3 nanowires for visible light photocatalysis

    NASA Astrophysics Data System (ADS)

    Fu, Q.; He, T.; Li, J. L.; Yang, G. W.

    2012-11-01

    We have theoretically investigated the structural, electronic, and optical properties of perovskite SrTiO3 nanowires for use in visible light photocatalytic applications using pseudopotential density-functional theory calculations. The electronic structure calculations show that the band gap is modified in the SrTiO3 nanowires compared with that of the bulk. For TiO2-terminated nanowires, the mid-band states induced by the combination of oxygen and strontium atoms on the surface lead to a shift in the valence band toward the conduction band without interference from the edge of the conduction band, which reduces the band gap. On the contrary, the electronic states induced by the combination of oxygen and strontium atoms on the surface of SrO-terminated nanowires lead to a shift in the conduction band toward the valence band. The calculated optical results indicate that the absorption edge of the nanowires shift towards the red-light region. These theoretical results suggest that perovskite SrTiO3 nanowires are promising candidates for use in visible light photocatalytic processes such as solar-assisted water splitting reactions.

  18. Effects of Emotional Valence and Arousal on Recollective and Nonrecollective Recall

    ERIC Educational Resources Information Center

    Gomes, Carlos F. A.; Brainerd, Charles J.; Stein, Lilian M.

    2013-01-01

    The authors investigated the effects of valence and arousal on memory using a dual-process model that quantifies recollective and nonrecollective components of recall without relying on metacognitive judgments to separate them. The results showed that valenced words increased reconstruction (a component of nonrecollective retrieval) relative to…

  19. Group Motivation and Group Task Performance: The Expectancy-Valence Theory Approach.

    ERIC Educational Resources Information Center

    Nakanishi, Masayuki

    1988-01-01

    Investigated effects of group motivation on group task performance. Created two levels of valence, expectancy and instrumentality. Valence variable reflected on group productivity on unstructured and task persistence measures. Expectancy variable's effect was on task persistence measure. Instrumentality affected group productivity on structured…

  20. Valence-Bond Concepts in Coordination Chemistry and the Nature of Metal-Metal Bonds.

    ERIC Educational Resources Information Center

    Pauling, Linus; Herman, Zelek S.

    1984-01-01

    Discusses the valence-bond method, applying it to some coordination compounds of metals, especially those involving metal-metal bonds. Suggests that transition metals can form as many as nine covalent bonds, permitting valence-theory to be extended to transition metal compounds in a more effective way than has been possible before. (JN)

  1. Identifying Facial Emotions: Valence Specific Effects and an Exploration of the Effects of Viewer Gender

    ERIC Educational Resources Information Center

    Jansari, Ashok; Rodway, Paul; Goncalves, Salvador

    2011-01-01

    The valence hypothesis suggests that the right hemisphere is specialised for negative emotions and the left hemisphere is specialised for positive emotions (Silberman & Weingartner, 1986). It is unclear to what extent valence-specific effects in facial emotion perception depend upon the gender of the perceiver. To explore this question 46…

  2. Valence Change Driven by Constituent Element Substitution in the Mixed-Valence Quasicrystal and Approximant Au-Al-Yb

    NASA Astrophysics Data System (ADS)

    Matsukawa, Shuya; Tanaka, Katsumasa; Nakayama, Mika; Deguchi, Kazuhiko; Imura, Keiichiro; Takakura, Hiroyuki; Kashimoto, Shiro; Ishimasa, Tsutomu; Sato, Noriaki K.

    2014-03-01

    Quantum criticality has been considered to be specific to crystalline materials such as heavy fermions. Very recently, however, the Tsai-type quasicrystal Au51Al34Yb15 has been reported to show unusual quantum critical behavior. To obtain a deeper understanding of this new material, we have searched for other Tsai-type cluster materials. Here, we report that the metal alloys Au44Ga41Yb15 and Ag47Ga38Yb15 are members of the 1/1 approximant to the Tsai-type quasicrystal and that both possess no localized magnetic moment. We suggest that the Au-Al-Yb system is located near the border of the divalent and trivalent states of the Yb ion; we also discuss a possible origin of the disappearance of magnetism, associated with the valence change, by the substitution of the constituent elements.

  3. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    NASA Astrophysics Data System (ADS)

    Yastrubchak, O.; Wosinski, T.; Gluba, L.; Andrearczyk, T.; Domagala, J. Z.; Żuk, J.; Sadowski, J.

    2014-01-01

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  4. n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

    NASA Astrophysics Data System (ADS)

    Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Weifeng; Zhang, Yuzhi; Luo, Yingmin

    2016-12-01

    High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.

  5. Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

    SciTech Connect

    Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; Jiang, Chao; Stanek, Christopher R.

    2015-11-24

    Complex doping schemes in R3Al5O12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimum (CBM) or valence-band maximum (VBM). We consider two sets of compositions based on Lu3B5O12 where B is Al, Ga, In, As, and Sb, and R3Al5O12, where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. Furthermore, this approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.

  6. Spot detection from MODIS imagery using 2P-CFAR

    NASA Astrophysics Data System (ADS)

    Ding, Xianwen; Li, Xiaofeng

    2015-12-01

    Oil spills are one of the major environmental concerns, especially in the coastal zones of the ocean. Satellite remote sensing imagery has proved to be a useful tool for monitoring oil spills in the marine environment. With its two daily acquisitions and the possibility to obtain near-real-time data free of charge, the Moderate Resolution Imaging Spectroradiometer (MODIS) shows interesting potential as such a cost-effective supplementary tool. Several researches on oil spill detection in MODIS imagery has been carried out for the past few years. Basically, oil spills were manually detected from MODIS imagery [1,2]. The disadvantage of the manual detection method is inefficient and subjective. Shi et al. proposed an oil spill detection method from MODIS imagery by using fuzzy cluster and texture feature extraction [3]. It works in an automatic manner and does not require any priori knowledge of occurrence or the spectral attributes of spills. But its efficiency in very near shore regions is limited. Chen and Zhao detected oil spills from the oil-water contrast ratio image by using a thresholding method [4].They found that the oil-water contrast ratio can be enhanced by replacing the original image with the ratio image of two different band ones in 400-800 nm. To obtain the oil-water contrast ratio image from the MODIS imagery, they selected the oil spill area and the background sea area and then calculated the mean radiance or emissivity value in those areas. By doing so, the automation and the accuracy of the method were reduced. Adamo et al. [5] and Kudryavtsev et al. [6] proposed physical methods for oil spill detection from MODIS imagery acquired in sunglint conditions. These two methods take imaging geometry into consideration and have the aid of other models or functions such as the Cox and Munk (1954) model [7],the CMOD4 model [8,9], the ECMWF (European Centre for Medium-Range Weather Forecasts) atmospheric model, and the transfer function, which increase the

  7. Skin-depth lattice strain, core-level trap depression and valence charge polarization of Al surfaces

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Bo, Maolin; Liu, Yonghui; Guo, Yongling; Wang, Haibin; Yue, Jian; Huang, Yongli

    2016-01-01

    Clarifying the origin for surface core-level shift (SCLS) and gaining quantitative information regarding the coordination-resolved local strain, binding energy (BE) shift and cohesive energy change have been a challenge. Here, we show that a combination of the bond order-length-strength (BOLS) premise, X-ray photoelectron spectroscopy (XPS) and the ab initio density functional theory (DFT) calculations of aluminum (Al) 2p3/2 energy shift of Al surfaces has enabled us to derive such information, namely, (i) the 2p3/2 energy of an isolated Al atom (72.146 ± 0.003eV) and its bulk shift (0.499 eV); (ii) the skin lattice contracts by up to 12.5% and the BE density increases by 70%; and (iii) the cohesive energy drops up to 38%. It is affirmed that the shorter and stronger bonds between under-coordinated atoms provide a perturbation to the Hamiltonian and hence lead to the local strain, quantum entrapment and valence charge polarization. Findings should help in understanding the phenomena of surface pre-melting and skin-high elasticity, in general.

  8. Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

    SciTech Connect

    Padilla, J. L.; Gámiz, F.

    2016-01-28

    In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

  9. The use of bulk states to accelerate the band edge statecalculation of a semiconductor quantum dot

    SciTech Connect

    Vomel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques,Osni A.; Dongarra, Jack J.

    2006-05-10

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.

  10. Influence of emotional valence and arousal on the spread of activation in memory.

    PubMed

    Jhean-Larose, Sandra; Leveau, Nicolas; Denhière, Guy

    2014-11-01

    Controversy still persists on whether emotional valence and arousal influence cognitive activities. Our study sought to compare how these two factors foster the spread of activation within the semantic network. In a lexical decision task, prime words were varied depending on the valence (pleasant or unpleasant) or on the level of emotional arousal (high or low). Target words were carefully selected to avoid semantic priming effects, as well as to avoid arousing specific emotions (neutral). Three SOA durations (220, 420 and 720 ms) were applied across three independent groups. Results indicate that at 220 ms, the effect of arousal is significantly higher than the effect of valence in facilitating spreading activation while at 420 ms, the effect of valence is significantly higher than the effect of arousal in facilitating spreading activation. These findings suggest that affect is a sequential process involving the successive intervention of arousal and valence.

  11. Molecular orbital study of the bond-valence sum rule using Lewis-electron pair theory.

    PubMed

    Mohri, Fumihito

    2003-04-01

    The bond-valence sum rule has been examined by molecular-orbital methods related to spin-coupling matrix theory [Okada & Fueno (1976). Bull. Chem. Soc. Jpn, 49, 1524-1530], to give a new formulation of the Lewis-electron pair concept. It is shown that the 'pair-coupling population' between atoms M and X exhibits the same behaviour as the bond valence between them. A quantum chemical definition for bond valence is proposed and successfully applied to Al(2)Cl(6), Te(4)Cl(16) and Al(2)Be(3)(SiO(3))(6) (beryl). Using an alternative bond-valence definition it is shown that for oxides the bond valence can possibly be taken as the double pair-coupling population.

  12. Electromagnetic Moments of Radioactive 136Te and the Emergence of Collectivity 2p+2n outside of Double-Magic 132Sn

    SciTech Connect

    Allmond, James M; Stuchberry, A. E.; Danchev, M.; Baktash, Cyrus; Gargano, A.; Galindo-Uribarri, Alfredo {nmn}; Radford, David C; Bingham, C. R.; Brown, Alex; Coraggio, L.; Covello, A.; Gross, Carl J; Hausladen, Paul; Itaco, N.; Lagergren, Karin B; Padilla-Rodal, Elizabeth; Pavan, John R; Riley, Mark; Stone, N. J.; Stracener, Daniel W; Varner Jr, Robert L; Yu, Chang-Hong

    2017-01-01

    Radioactive 136Te has two valence protons and two valence neutrons outside of the 132Sn double shell closure, providing a simple laboratory for exploring the emergence of collectivity and nucleon- nucleon interactions. Coulomb excitation of 136Te on a titanium target was utilized to determine an extensive set of electromagnetic moments for the three lowest-lying states, including B(E2;0+1 2+1 ), Q(2+1 ), and g(2+1 ). The results indicate that the first-excited state, 2+1 , composed of the simple 2p 2n system, is prolate deformed, and its wavefunction is dominated by neutron degrees of freedom, but not to the extent previously suggested. It is demonstrated that extreme sensitivity of g(2+1 ) to the proton and neutron contributions to the wavefunction provides unique insight into the nature of emerging collectivity, and g(2+1 ) was used to differentiate among several state-of-the-art theoretical calculations. Our results are best described by the most recent shell model calculations.

  13. Electromagnetic Moments of Radioactive 136Te and the Emergence of Collectivity 2p ⊕ 2n outside of Double-Magic 132Sn

    DOE PAGES

    Allmond, James M.; Stuchberry, A. E.; Baktash, Cyrus; ...

    2017-03-03

    Radioactive 136Te has two valence protons and two valence neutrons outside of the 132Sn double shell closure, providing a simple laboratory for exploring the emergence of collectivity and nucleon- nucleon interactions. Coulomb excitation of 136Te on a titanium target was utilized to determine an extensive set of electromagnetic moments for the three lowest-lying states, including B(E2;0more » $$+\\atop{1}$$→ 2$$+\\atop{1}$$ ), Q(2$$+\\atop{1}$$ ), and g(2$$+\\atop{1}$$ ). The results indicate that the first-excited state, 2$$+\\atop{1}$$ , composed of the simple 2p ⊕ 2n system, is prolate deformed, and its wave function is dominated by neutron degrees of freedom, but not to the extent previously suggested. It is demonstrated that extreme sensitivity of g(2$$+\\atop{1}$$) to the proton and neutron contributions to the wave function provides unique insight into the nature of emerging collectivity, and g(2$$+\\atop{1}$$ ) was used to differentiate among several state-of-the-art theoretical calculations. Finally, our results are best described by the most recent shell model calculations.« less

  14. Large-scale P2P network based distributed virtual geographic environment (DVGE)

    NASA Astrophysics Data System (ADS)

    Tan, Xicheng; Yu, Liang; Bian, Fuling

    2007-06-01

    Virtual Geographic Environment has raised full concern as a kind of software information system that helps us understand and analyze the real geographic environment, and it has also expanded to application service system in distributed environment--distributed virtual geographic environment system (DVGE), and gets some achievements. However, limited by the factor of the mass data of VGE, the band width of network, as well as numerous requests and economic, etc. DVGE still faces some challenges and problems which directly cause the current DVGE could not provide the public with high-quality service under current network mode. The Rapid development of peer-to-peer network technology has offered new ideas of solutions to the current challenges and problems of DVGE. Peer-to-peer network technology is able to effectively release and search network resources so as to realize efficient share of information. Accordingly, this paper brings forth a research subject on Large-scale peer-to-peer network extension of DVGE as well as a deep study on network framework, routing mechanism, and DVGE data management on P2P network.

  15. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

    PubMed Central

    Dhyani, Veerendra; Das, Samaresh

    2017-01-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere. PMID:28281652

  16. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

    NASA Astrophysics Data System (ADS)

    Dhyani, Veerendra; Das, Samaresh

    2017-03-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere.

  17. Epitaxial strain tuning of polarization and band gap in perovksite SnTiO3

    NASA Astrophysics Data System (ADS)

    Parker, William; Nakhmanson, Serge; Rondinelli, James

    2012-02-01

    Lead toxicity has motivated theoretical studies of a tin-based perovskite ferroelectric material. Density-functional calculations predict a polar perovksite ground state for SnTiO3. Simulated epitaxial strain up to ±2% tunes both the magnitude of the polar distortion, its direction, and the electronic band gap --- compressive bi-axial strain creates the largest polar distortions, which occur entirely in the growth direction, while tensile strain reorients the polar displacements, enlarging the band gap. Projected densities of states indicate that the broken four-fold symmetry of the non-growth-oriented distortion allows Ti dxy bands to mix with O px bands, further separating the valence band maximum and conduction band minimum. Comparing Sn and Pb in the perovskite titanate phases shows similar trends and suggests that SnTiO3 ferroelectrics may be viable thin-film alternatives to Pb-based oxides.

  18. Interfacial chemical bonding state and band alignment of CaF{sub 2}/hydrogen-terminated diamond heterojunction

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Cheng, S. H.; Imura, M.; Koide, Y.

    2013-03-28

    CaF{sub 2} films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF{sub 2}/H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF{sub 2}/H-diamond heterointerface. Valence and conductance band offsets of the CaF{sub 2}/H-diamond heterojunciton are determined to be 3.7 {+-} 0.2 and 0.3 {+-} 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF{sub 2}/H-diamond heterojunciton for the development of high power and high frequency field effect transistors.

  19. Protein Kinase A Is Central for Forward Transport of Two-pore Domain Potassium Channels K2P3.1 and K2P9.1*

    PubMed Central

    Mant, Alexandra; Elliott, David; Eyers, Patrick A.; O'Kelly, Ita M.

    2011-01-01

    Acid-sensitive two-pore domain potassium channels (K2P3.1 and K2P9.1) play key roles in both physiological and pathophysiological mechanisms, the most fundamental of which is control of resting membrane potential of cells in which they are expressed. These background “leak” channels are constitutively active once expressed at the plasma membrane, and hence tight control of their targeting and surface expression is fundamental to the regulation of K+ flux and cell excitability. The chaperone protein, 14-3-3, binds to a critical phosphorylated serine in the channel C termini of K2P3.1 and K2P9.1 (Ser393 and Ser373, respectively) and overcomes retention in the endoplasmic reticulum by βCOP. We sought to identify the kinase responsible for phosphorylation of the terminal serine in human and rat variants of K2P3.1 and K2P9.1. Adopting a bioinformatic approach, three candidate protein kinases were identified: cAMP-dependent protein kinase, ribosomal S6 kinase, and protein kinase C. In vitro phosphorylation assays were utilized to determine the ability of the candidate kinases to phosphorylate the channel C termini. Electrophysiological measurements of human K2P3.1 transiently expressed in HEK293 cells and cell surface assays of GFP-tagged K2P3.1 and K2P9.1 enabled the determination of the functional implications of phosphorylation by specific kinases. All of our findings support the conclusion that cAMP-dependent protein kinase is responsible for the phosphorylation of the terminal serine in both K2P3.1 and K2P9.1. PMID:21357689

  20. Protein kinase A is central for forward transport of two-pore domain potassium channels K2P3.1 and K2P9.1.

    PubMed

    Mant, Alexandra; Elliott, David; Eyers, Patrick A; O'Kelly, Ita M

    2011-04-22

    Acid-sensitive two-pore domain potassium channels (K2P3.1 and K2P9.1) play key roles in both physiological and pathophysiological mechanisms, the most fundamental of which is control of resting membrane potential of cells in which they are expressed. These background "leak" channels are constitutively active once expressed at the plasma membrane, and hence tight control of their targeting and surface expression is fundamental to the regulation of K(+) flux and cell excitability. The chaperone protein, 14-3-3, binds to a critical phosphorylated serine in the channel C termini of K2P3.1 and K2P9.1 (Ser(393) and Ser(373), respectively) and overcomes retention in the endoplasmic reticulum by βCOP. We sought to identify the kinase responsible for phosphorylation of the terminal serine in human and rat variants of K2P3.1 and K2P9.1. Adopting a bioinformatic approach, three candidate protein kinases were identified: cAMP-dependent protein kinase, ribosomal S6 kinase, and protein kinase C. In vitro phosphorylation assays were utilized to determine the ability of the candidate kinases to phosphorylate the channel C termini. Electrophysiological measurements of human K2P3.1 transiently expressed in HEK293 cells and cell surface assays of GFP-tagged K2P3.1 and K2P9.1 enabled the determination of the functional implications of phosphorylation by specific kinases. All of our findings support the conclusion that cAMP-dependent protein kinase is responsible for the phosphorylation of the terminal serine in both K2P3.1 and K2P9.1.

  1. Synchrotron Studies of Narrow Band and Low-Dimensional Materials. Final Report for July 1, 1990---December 31, 2002

    SciTech Connect

    Allen, J. W.

    2003-05-13

    This report summarizes a 12-year program of various kinds of synchrotron spectroscopies directed at the electronic structures of narrow band and low-dimensional materials that display correlated electron behaviors such as metal-insulator transitions, mixed valence, superconductivity, Kondo moment quenching, heavy Fermions, and non-Fermi liquid properties.

  2. Band Structure Asymmetry of Bilayer Graphene Revealed by Infrared Spectroscopy

    SciTech Connect

    Li, Z.Q.; Henriksen, E.A.; Jiang, Z.; Hao, Zhao; Martin, Michael C.; Kim, P.; Stormer, H.L.; Basov, Dimitri N.

    2008-12-10

    We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observe a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer and the next-nearest-neighbor interlayer coupling. From the conductivity data, the energy difference of the two sublattices and the interlayer coupling energy are directly determined.

  3. Altered Expression of Two-Pore Domain Potassium (K2P) Channels in Cancer

    PubMed Central

    Williams, Sarah; Bateman, Andrew; O'Kelly, Ita

    2013-01-01

    Potassium channels have become a focus in cancer biology as they play roles in cell behaviours associated with cancer progression, including proliferation, migration and apoptosis. Two-pore domain (K2P) potassium channels are background channels which enable the leak of potassium ions from cells. As these channels are open at rest they have a profound effect on cellular membrane potential and subsequently the electrical activity and behaviour of cells in which they are expressed. The K2P family of channels has 15 mammalian members and already 4 members of this family (K2P2.1, K2P3.1, K2P9.1, K2P5.1) have been implicated in cancer. Here we examine the expression of all 15 members of the K2P family of channels in a range of cancer types. This was achieved using the online cancer microarray database, Oncomine (www.oncomine.org). Each gene was examined across 20 cancer types, comparing mRNA expression in cancer to normal tissue. This analysis revealed all but 3 K2P family members (K2P4.1, K2P16.1, K2P18.1) show altered expression in cancer. Overexpression of K2P channels was observed in a range of cancers including breast, leukaemia and lung while more cancers (brain, colorectal, gastrointestinal, kidney, lung, melanoma, oesophageal) showed underexpression of one or more channels. K2P1.1, K2P3.1, K2P12.1, were overexpressed in a range of cancers. While K2P1.1, K2P3.1, K2P5.1, K2P6.1, K2P7.1 and K2P10.1 showed significant underexpression across the cancer types examined. This analysis supports the view that specific K2P channels may play a role in cancer biology. Their altered expression together with their ability to impact the function of other ion channels and their sensitivity to environmental stimuli (pO2, pH, glucose, stretch) makes understanding the role these channels play in cancer of key importance. PMID:24116006

  4. Altered expression of two-pore domain potassium (K2P) channels in cancer.

    PubMed

    Williams, Sarah; Bateman, Andrew; O'Kelly, Ita

    2013-01-01

    Potassium channels have become a focus in cancer biology as they play roles in cell behaviours associated with cancer progression, including proliferation, migration and apoptosis. Two-pore domain (K2P) potassium channels are background channels which enable the leak of potassium ions from cells. As these channels are open at rest they have a profound effect on cellular membrane potential and subsequently the electrical activity and behaviour of cells in which they are expressed. The K2P family of channels has 15 mammalian members and already 4 members of this family (K2P2.1, K2P3.1, K2P9.1, K2P5.1) have been implicated in cancer. Here we examine the expression of all 15 members of the K2P family of channels in a range of cancer types. This was achieved using the online cancer microarray database, Oncomine (www.oncomine.org). Each gene was examined across 20 cancer types, comparing mRNA expression in cancer to normal tissue. This analysis revealed all but 3 K2P family members (K2P4.1, K2P16.1, K2P18.1) show altered expression in cancer. Overexpression of K2P channels was observed in a range of cancers including breast, leukaemia and lung while more cancers (brain, colorectal, gastrointestinal, kidney, lung, melanoma, oesophageal) showed underexpression of one or more channels. K2P1.1, K2P3.1, K2P12.1, were overexpressed in a range of cancers. While K2P1.1, K2P3.1, K2P5.1, K2P6.1, K2P7.1 and K2P10.1 showed significant underexpression across the cancer types examined. This analysis supports the view that specific K2P channels may play a role in cancer biology. Their altered expression together with their ability to impact the function of other ion channels and their sensitivity to environmental stimuli (pO2, pH, glucose, stretch) makes understanding the role these channels play in cancer of key importance.

  5. Double-hole-mediated coupling of dopants and its impact on band gap engineering in TiO2.

    PubMed

    Yin, Wan-Jian; Wei, Su-Huai; Al-Jassim, Mowafak M; Yan, Yanfa

    2011-02-11

    A double-hole-mediated coupling of dopants is unraveled and confirmed in TiO2 by density-functional theory calculations. We find that when a dopant complex on neighboring oxygen sites in TiO2 has net two holes, the holes will strongly couple to each other through significant lattice relaxation. The coupling results in the formation of fully filled impurity bands lying above the valence band of TiO2, leading to a much more effective band gap reduction than that induced by monodoping or conventional donor-acceptor codoping. Our results suggest a new path for semiconductor band gap engineering.

  6. Synthesis of β-Ca2P2O7:Tb(3+) to gamma radiation detection by thermoluminescence.

    PubMed

    Roman-Lopez, J; Lozano, I B; Cruz-Zaragoza, E; Castañeda, J I Guzman; Díaz-Góngora, J A I

    2017-03-06

    In this work, luminescent emissions of beta-calcium pyrophosphate doped with terbium ions (β-Ca2P2O7:Tb(3+)) were studied. The Ca2P2O7:Tb(3+) powders were prepared by precipitation and annealed at 900°C for 2h was applied on the powders to observe the beta phase. Radioluminescence measurements showed emission bands related with (5)D3 ((5)D4)→(7)FJ transitions of Tb(3+) ions. Three overlapped peaks at 126, 165 and 220°C were observed in thermoluminescence response. A linear TL dose-response in the range of 0.2-10Gy and an acceptable TL reproducibility were showed by the β-Ca2P2O7:Tb(3+) samples exposed to (60)Co gamma radiation. The TL glow curves were analyzed by Initial Rise method and Computational Glow-Curve Deconvolution assuming a General Order Kinetic model to evaluate the kinetic parameters related with the TL peaks.

  7. Including the relativistic kinetic energy in a spline-augmented plane-wave band calculation

    SciTech Connect

    Fehrenbach, G.M.; Schmidt, G.

    1997-03-01

    The first-order relativistic correction to the kinetic energy of an electron, the mass-velocity term, is not bounded from below. It can, therefore, not be used within a variational framework. To overcome this deficiency we developed a method to include the entire relativistic kinetic energy {radical}(p{sup 2}c{sup 2}+m{sub 0}{sup 2}c{sup 4}){minus}m{sub 0}c{sup 2} in a spline-augmented plane-wave band calculation. The first results for silver are quite promising, especially for d and p states: The analysis of the energies of the core states as well as of the valence band structure suggests that the energies of d bands are reproduced within 1 mRy. However, the combination of the relativistic kinetic energy with the Darwin term leads to energies which are too low for s-like valence states by 10 mRy. Therefore, the s and d valence band complex is spread out and the Fermi level is lowered by the same amount as the s states. We expect to overcome these deficiencies in future investigations by using a alternative form of the relativistic potential correction along the lines proposed by Douglas and Kroll. {copyright} {ital 1997} {ital The American Physical Society}

  8. Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System

    NASA Astrophysics Data System (ADS)

    Ohta, A.; Murakami, H.; Higashi, S.; Miyazaki, S.

    2013-03-01

    Effect of incorporating a third element into HfO2 on the electronic structures has been studied by high resolution x-ray photoelectron spectroscopy (XPS). Hf-IIIa (La, Y, Gd, and Dy) oxide and Hf-Ti oxide films were deposited on a Pt layer by metal organic chemical vapor deposition (MOCVD) and co-sputtering and followed by post-deposition annealing in O2 ambience at 500°C. The energy bandgap (Eg) of these Hf-based oxide films was determined by analyzing the energy loss spectra of O 1s photoelectrons in consideration of the overlap with Hf 4s core-line signals. From analyses of the valence band signals and the cut-off energy for photoelectrons, the valence band offset between the Hf based-oxide, and the Pt electrode and the work function value of the Pt layer were evaluated. By combining the oxide bandgap values, the valence band line-ups, and the Pt work function value, the energy band profile of the Hf-based oxide/Pt has been determined.

  9. Band alignment of atomic layer deposited (HfZrO4)1-x(SiO2)x gate dielectrics on Si (100)

    NASA Astrophysics Data System (ADS)

    Heo, Sung; Tahir, Dahlang; Chung, Jae Gwan; Lee, Jae Cheol; Kim, KiHong; Lee, Junho; Lee, Hyung-Ik; Park, Gyeong Su; Oh, Suhk Kun; Kang, Hee Jae; Choi, Pyungho; Choi, Byoung-Deog

    2015-11-01

    The band alignment of atomic layer deposited (HfZrO4)1-x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO4 silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO2 increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO2 mole fraction, decreased the gate leakage current density. As a result, HfZrO4 silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.

  10. Band alignment of atomic layer deposited (HfZrO{sub 4}){sub 1−x}(SiO{sub 2}){sub x} gate dielectrics on Si (100)

    SciTech Connect

    Heo, Sung; Tahir, Dahlang; Chung, Jae Gwan; Lee, Jae Cheol; Kim, KiHong; Lee, Junho; Lee, Hyung-Ik; Park, Gyeong Su; Oh, Suhk Kun; Kang, Hee Jae; Choi, Pyungho; Choi, Byoung-Deog

    2015-11-02

    The band alignment of atomic layer deposited (HfZrO{sub 4}){sub 1−x}(SiO{sub 2}){sub x} (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO{sub 4} silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO{sub 2} increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO{sub 2} mole fraction, decreased the gate leakage current density. As a result, HfZrO{sub 4} silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.

  11. Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

    PubMed Central

    Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

    2016-01-01

    The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

  12. First principles scheme to evaluate band edge positions in potential transition metal oxide photocatalysts and photoelectrodes.

    PubMed

    Toroker, Maytal Caspary; Kanan, Dalal K; Alidoust, Nima; Isseroff, Leah Y; Liao, Peilin; Carter, Emily A

    2011-10-06

    The positions of electronic band edges are one important metric for determining a material's capability to function in a solar energy conversion device that produces fuels from sunlight. In particular, the position of the valence band maximum (conduction band minimum) must lie lower (higher) in energy than the oxidation (reduction) reaction free energy in order for these reactions to be thermodynamically favorable. We present first principles quantum mechanics calculations of the band edge positions in five transition metal oxides and discuss the feasibility of using these materials in photoelectrochemical cells that produce fuels, including hydrogen, methane, methanol, and formic acid. The band gap center is determined within the framework of DFT+U theory. The valence band maximum (conduction band minimum) is found by subtracting (adding) half of the quasiparticle gap obtained from a non-self-consistent GW calculation. The calculations are validated against experimental data where possible; results for several materials including manganese(ii) oxide, iron(ii) oxide, iron(iii) oxide, copper(i) oxide and nickel(ii) oxide are presented.

  13. Valence tautomerism in synthetic models of cytochrome P450

    PubMed Central

    Das, Pradip Kumar; Samanta, Subhra; McQuarters, Ashley B.; Lehnert, Nicolai

    2016-01-01

    CytP450s have a cysteine-bound heme cofactor that, in its as-isolated resting (oxidized) form, can be conclusively described as a ferric thiolate species. Unlike the native enzyme, most synthetic thiolate-bound ferric porphyrins are unstable in air unless the axial thiolate ligand is sterically protected. Spectroscopic investigations on a series of synthetic mimics of cytP450 indicate that a thiolate-bound ferric porphyrin coexists in organic solutions at room temperature (RT) with a thiyl-radical bound ferrous porphyrin, i.e., its valence tautomer. The ferric thiolate state is favored by greater enthalpy and is air stable. The ferrous thiyl state is favored by entropy, populates at RT, and degrades in air. These ground states can be reversibly interchanged at RT by the addition or removal of water to the apolar medium. It is concluded that hydrogen bonding and local electrostatics protect the resting oxidized cytP450 active site from degradation in air by stabilizing the ferric thiolate ground state in contrast to its synthetic analogs. PMID:27302948

  14. Valence atom with bohmian quantum potential: the golden ratio approach

    PubMed Central

    2012-01-01

    Background The alternative quantum mechanical description of total energy given by Bohmian theory was merged with the concept of the golden ratio and its appearance as the Heisenberg imbalance to provide a new density-based description of the valence atomic state and reactivity charge with the aim of clarifying their features with respect to the so-called DFT ground state and critical charge, respectively. Results The results, based on the so-called double variational algorithm for chemical spaces of reactivity, are fundamental and, among other issues regarding chemical bonding, solve the existing paradox of using a cubic parabola to describe a quadratic charge dependency. Conclusions Overall, the paper provides a qualitative-quantitative explanation of chemical reactivity based on more than half of an electronic pair in bonding, and provide new, more realistic values for the so-called “universal” electronegativity and chemical hardness of atomic systems engaged in reactivity (analogous to the atoms-in-molecules framework). PMID:23146157

  15. The valence-fluctuating ground state of plutonium

    DOE PAGES

    Janoschek, Marc; Das, Pinaki; Chakrabarti, Bismayan; ...

    2015-07-10

    A central issue in material science is to obtain understanding of the electronic correlations that control complex materials. Such electronic correlations frequently arise because of the competition of localized and itinerant electronic degrees of freedom. Although the respective limits of well-localized or entirely itinerant ground states are well understood, the intermediate regime that controls the functional properties of complex materials continues to challenge theoretical understanding. We have used neutron spectroscopy to investigate plutonium, which is a prototypical material at the brink between bonding and nonbonding configurations. In addition, our study reveals that the ground state of plutonium is governed bymore » valence fluctuations, that is, a quantum mechanical superposition of localized and itinerant electronic configurations as recently predicted by dynamical mean field theory. Our results not only resolve the long-standing controversy between experiment and theory on plutonium’s magnetism but also suggest an improved understanding of the effects of such electronic dichotomy in complex materials.« less

  16. Valence shell photoionization of SF6 and high harmonic generation

    NASA Astrophysics Data System (ADS)

    Jobin, Jobin; Fulfer, K.; Wilson, B.; Poliakoff, E.; Trallero, C.; Mondal, S.; Le, A.-T.; Lin, C.-D.; Lucchese, Robert

    2013-05-01

    When an atom or molecule is exposed to highly intense laser fields, the target can emit coherent radiation at photon energies which are multiples of incident laser energy. This process is known as High-order harmonic generation (HHG). There has been experimental and theoretical investigation of HHG for atoms and simple linear molecules. However, there have been few such studies for non-linear polyatomic molecules. In the current work, we investigate HHG for SF6 experimentally and theoretically. We employ quantitative rescattering theory (QRS) which makes use of the magnitude and phase of the dipole transition matrix elements for photoionization. For calculating dipole transition matrix elements we employ the ePolyscat static-exchange method. The features seen in the computed results will be compared to corresponding features in the measured HHG spectrum. The calculation is repeated for different polarization of incident laser and different intensities. The analysis allows us to reproduce then understand experimentally measured HHG spectra from SF6. Additionally, the valence shell photoionization parameters are also compared with several other theoretical and experimental results.

  17. The influence of feedback valence in associative learning.

    PubMed

    Bischoff-Grethe, Amanda; Hazeltine, Eliot; Bergren, Lindsey; Ivry, Richard B; Grafton, Scott T

    2009-01-01

    The neural systems engaged by intrinsic positive or negative feedback were defined in an associative learning task. Through trial and error, participants learned the arbitrary assignments of a set of stimuli to one of two response categories. Informative feedback was provided on less than 25% of the trials. During positive feedback blocks, half of the trials were eligible for informative feedback; of these, informative feedback was only provided when the response was correct. A similar procedure was used on negative feedback blocks, but here informative feedback was only provided when the response was incorrect. In this manner, we sought to identify regions that were differentially responsive to positive and negative feedback as well as areas that were responsive to both types of informative feedback. Several regions of interest, including the bilateral nucleus accumbens, caudate nucleus, anterior insula, right cerebellar lobule VI, and left putamen, were sensitive to informative feedback regardless of valence. In contrast, several regions were more selective to positive feedback compared to negative feedback. These included the insula, amygdala, putamen, and supplementary motor area. No regions were more strongly activated by negative feedback compared to positive feedback. These results indicate that the neural areas supporting associative learning vary as a function of how that information is learned. In addition, areas linked to intrinsic reinforcement showed considerable overlap with those identified in studies using extrinsic reinforcers.

  18. Developmental Reversals in False Memory: Effects of Emotional Valence and Arousal

    PubMed Central

    Brainerd, C. J.; Holliday, R. E.; Reyna, V. F.; Yang, Y.; Toglia, M. P.

    2010-01-01

    Do the emotional valence and arousal of events distort children’s memories? Do valence and arousal modulate counterintuitive age increases in false memory? We investigated those questions in children, adolescents, and adults using the Cornell/Cortland Emotion Lists, a word list pool that induces false memories and in which valence and arousal can be manipulated factorially. False memories increased with age for unpresented semantic associates of word lists, and net accuracy (the ratio of true memory to total memory) decreased with age. These surprising developmental trends were more pronounced for negatively-valenced materials than for positively-valenced materials, they were more pronounced for high-arousal materials than for low-arousal materials, and developmental increases in the effects of arousal were small in comparison to developmental increases in the effects of valence. These findings have ramifications for legal applications of false-memory research: Materials that share the emotional hallmark of crimes (events that are negatively valenced and arousing) produced the largest age increases in false memory and the largest age declines in net accuracy. PMID:20547393

  19. Developmental reversals in false memory: Effects of emotional valence and arousal.

    PubMed

    Brainerd, C J; Holliday, R E; Reyna, V F; Yang, Y; Toglia, M P

    2010-10-01

    Do the emotional valence and arousal of events distort children's memories? Do valence and arousal modulate counterintuitive age increases in false memory? We investigated those questions in children, adolescents, and adults using the Cornell/Cortland Emotion Lists, a word list pool that induces false memories and in which valence and arousal can be manipulated factorially. False memories increased with age for unpresented semantic associates of word lists, and net accuracy (the ratio of true memory to total memory) decreased with age. These surprising developmental trends were more pronounced for negatively valenced materials than for positively valenced materials, they were more pronounced for high-arousal materials than for low-arousal materials, and developmental increases in the effects of arousal were small in comparison with developmental increases in the effects of valence. These findings have ramifications for legal applications of false memory research; materials that share the emotional hallmark of crimes (events that are negatively valenced and arousing) produced the largest age increases in false memory and the largest age declines in net accuracy.

  20. Environmental variables and releasing-valence transfer in stimulus-directed pecking of chicks.

    PubMed

    Suboski, M D

    1987-05-01

    Releasing valence transfer occurs when the power or valence to release responses is transferred from a primary releasing stimulus to a second, initially neutral, stimulus. In the exemplar, pecking responses by neonatal chicks are released and directed by a pointed object operated to make pecking movements. Stimuli attached to or pecked by the arrow thereby acquire enhanced releasing valence. Chicks peck at matching stimuli in preference to comparable but unenhanced stimuli. Research reported here shows that primary and transferred releasing valences are differentially affected by environmental variables. Specific findings were Pecking by chicks occurs only within a narrow range of ambient temperature. Outside of this range, pecking is low in frequency and insensitive to valence-enhanced release. Pecking by chicks appears to be finely tuned to arrow peck rates between 120 and 180 pecks per minute. Within this range, frequency of pecks by chicks is low whereas the percentage of pecks to the valence-enhanced stimulus is maximal. The maternal food call was a weak releaser of pecking by chicks with no valence-enhancing properties.

  1. Lying about the Valence of Affective Pictures: An fMRI Study

    PubMed Central

    Lee, Tatia M. C.; Lee, Tiffany M. Y.; Raine, Adrian; Chan, Chetwyn C. H.

    2010-01-01

    The neural correlates of lying about affective information were studied using a functional magnetic resonance imaging (fMRI) methodology. Specifically, 13 healthy right-handed Chinese men were instructed to lie about the valence, positive or negative, of pictures selected from the International Affective Picture System (IAPS) while their brain activity was scanned by a 3T Philip Achieva scanner. The key finding is that the neural activity associated with deception is valence-related. Comparing to telling the truth, deception about the valence of the affectively positive pictures was associated with activity in the inferior frontal, cingulate, inferior parietal, precuneus, and middle temporal regions. Lying about the valence of the affectively negative pictures, on the other hand, was associated with activity in the orbital and medial frontal regions. While a clear valence-related effect on deception was observed, common neural regions were also recruited for the process of deception about the valence of the affective pictures. These regions included the lateral prefrontal and inferior parietal regions. Activity in these regions has been widely reported in fMRI studies on deception using affectively-neutral stimuli. The findings of this study reveal the effect of valence on the neural activity associated with deception. Furthermore, the data also help to illustrate the complexity of the neural mechanisms underlying deception. PMID:20811624

  2. The Effect of Action Valence and Race on 3- to 8-Year-Old Children's Social Cognitive Judgments

    ERIC Educational Resources Information Center

    Arterberry, Martha E.; Hughes, Brittany C.; Mejia, Barbara

    2015-01-01

    The present study investigated children's judgments of actions as a function of the valence of the action and the race of the actor. Three- to 8-year-old children were read an illustrated storybook in which 1 character did not share (a negatively valenced action) and the other character was helpful (a positively valenced action). The race of the…

  3. Valence Scaling of Dynamic Facial Expressions Is Altered in High-Functioning Subjects with Autism Spectrum Disorders: An FMRI Study

    ERIC Educational Resources Information Center

    Rahko, Jukka S.; Paakki, Jyri-Johan; Starck, Tuomo H.; Nikkinen, Juha; Pauls, David L.; Katsyri, Jari V.; Jansson-Verkasalo, Eira M.; Carter, Alice S.; Hurtig, Tuula M.; Mattila, Marja-Leena; Jussila, Katja K.; Remes, Jukka J.; Kuusikko-Gauffin, Sanna A.; Sams, Mikko E.; Bolte, Sven; Ebeling, Hanna E.; Moilanen, Irma K.; Tervonen, Osmo; Kiviniemi, Vesa

    2012-01-01

    FMRI was performed with the dynamic facial expressions fear and happiness. This was done to detect differences in valence processing between 25 subjects with autism spectrum disorders (ASDs) and 27 typically developing controls. Valence scaling was abnormal in ASDs. Positive valence induces lower deactivation and abnormally strong activity in ASD…

  4. First-principle natural band alignment of GaN / dilute-As GaNAs alloy

    SciTech Connect

    Tan, Chee-Keong Tansu, Nelson

    2015-01-15

    Density functional theory (DFT) calculations with the local density approximation (LDA) functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

  5. Positively Valenced Stimuli Facilitate Creative Novel Metaphoric Processes by Enhancing Medial Prefrontal Cortical Activation

    PubMed Central

    Subramaniam, Karuna; Beeman, Mark; Faust, Miriam; Mashal, Nira

    2013-01-01

    A metaphor is a figure of speech in which a subject is symbolic of another unrelated object. In the present study, we examined neural patterns associated with both novel unfamiliar and conventional familiar metaphoric processing, and how these patterns are modulated by affective valence. Prior to fMRI scanning, participants received a list of word pairs (novel unfamiliar metaphors as well as conventional familiar metaphors) and were asked to denote the valence (positive, negative, or neutral) of each word pair. During scanning, participants had to decide whether the word pairs formed meaningful or meaningless expressions. Results indicate that participants were faster and more accurate at deciding that positively valenced metaphors were meaningful compared to neutral metaphors. These behavioral findings were accompanied by increased activation in the medial prefrontal cortex (mPFC), posterior cingulate cortex (PCC), and the right inferior parietal lobe (RIPL). Specifically, positively valenced novel unfamiliar metaphors elicited activation in these brain regions in addition to the left superior temporal gyrus when compared to neutral novel metaphors. We also found that the mPFC and PCC mediated the processing of positively valenced metaphors when compared to negatively valenced metaphors. Positively valenced conventional metaphors, however, elicited different neural signatures when contrasted with either neutral or negatively valenced conventional metaphors. Together, our results indicate that positively valenced stimuli facilitate creative metaphoric processes (specifically novel metaphoric processes) by mediating attention and cognitive control processes required for the access, integration, and selection of semantic associations via modulation of the mPFC. The present study is important for the development of neural accounts of emotion-cognition interactions required for creativity, language, and successful social functioning in general. PMID:23637686

  6. Wide Band to ''Double Band'' upgrade

    SciTech Connect

    Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

    1988-06-01

    The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs.

  7. Valence Fluctuations in CeCo2 and Ti-Doped CeCo2

    NASA Astrophysics Data System (ADS)

    Öner, Yıldırhan

    2016-12-01

    We report on the magnetic measurements of polycrystalline samples of CeCo2 and CeCo(2-x)Ti x (x = 0.01, 0.02, 0.03, 0.04, and 0.05) which have been synthesized by an arc melting technique. All these compounds crystallize into the face-centered cubic (FCC) structure with the Fd bar{3} m space group. The lattice parameter decreases linearly with increasing Ti content from 7.15808(5) Å for x = 0 (CeCo2) to 7.15231(7) Å for x = 0.05. The magnetic behavior of these compounds has been investigated in the temperature range 5-400 K. The zero field-cooled (ZFC) and field-cooled magnetization (FC) curves show irreversibility below T = 400 K. This result indicates that an inhomogeneous, dynamic magnetic state exists over a wide temperature range. The magnetic susceptibility for both ZFC and FC cases initially decreases with Ti content and then increases with further Ti addition. This behavior is interpreted in terms of band magnetism in the presence of magnetic clusters. This result indicates that the magnetic inhomogeneity of these alloys becomes dominant over a wide temperature range. The observed temperature dependence of the magnetic susceptibility leads us to suggest that these compounds are in a mixed-valence state of the magnetic Ce3+ ions and non-magnetic Ce4+ ions. This fact allows us to successfully interpret the ZFC magnetic susceptibility data with the two-level ionic inter-configuration fluctuations model. We also observe that the magnetic susceptibility increases by the addition of Ti, as evidenced by the enhancement of the formation of magnetic Co clusters due to local disorder. Finally, the magnetic state below the Curie temperatures are discussed based on Griffiths-like behavior.

  8. Valence Fluctuations in CeCo2 and Ti-Doped CeCo2

    NASA Astrophysics Data System (ADS)

    Öner, Yıldırhan

    2017-04-01

    We report on the magnetic measurements of polycrystalline samples of CeCo2 and CeCo(2- x)Ti x ( x = 0.01, 0.02, 0.03, 0.04, and 0.05) which have been synthesized by an arc melting technique. All these compounds crystallize into the face-centered cubic (FCC) structure with the Fd bar{3} m space group. The lattice parameter decreases linearly with increasing Ti content from 7.15808(5) Å for x = 0 (CeCo2) to 7.15231(7) Å for x = 0.05. The magnetic behavior of these compounds has been investigated in the temperature range 5-400 K. The zero field-cooled (ZFC) and field-cooled magnetization (FC) curves show irreversibility below T = 400 K. This result indicates that an inhomogeneous, dynamic magnetic state exists over a wide temperature range. The magnetic susceptibility for both ZFC and FC cases initially decreases with Ti content and then increases with further Ti addition. This behavior is interpreted in terms of band magnetism in the presence of magnetic clusters. This result indicates that the magnetic inhomogeneity of these alloys becomes dominant over a wide temperature range. The observed temperature dependence of the magnetic susceptibility leads us to suggest that these compounds are in a mixed-valence state of the magnetic Ce3+ ions and non-magnetic Ce4+ ions. This fact allows us to successfully interpret the ZFC magnetic susceptibility data with the two-level ionic inter-configuration fluctuations model. We also observe that the magnetic susceptibility increases by the addition of Ti, as evidenced by the enhancement of the formation of magnetic Co clusters due to local disorder. Finally, the magnetic state below the Curie temperatures are discussed based on Griffiths-like behavior.

  9. Complex materials for molecular spintronics applications: cobalt bis(dioxolene) valence tautomers, from molecules to polymers.

    PubMed

    Calzolari, Arrigo; Chen, Yifeng; Lewis, Geoffrey F; Dougherty, Daniel B; Shultz, David; Nardelli, Marco Buongiorno

    2012-11-01

    Using first principles calculations, we predict a complex multifunctional behavior in cobalt bis(dioxolene) valence tautomeric compounds. Molecular spin-state switching is shown to dramatically alter electronic properties and corresponding transport properties. This spin state dependence has been demonstrated for technologically relevant coordination polymers of valence tautomers as well as for novel conjugated polymers with valence tautomeric functionalization. As a result, these materials are proposed as promising candidates for spintronic devices that can couple magnetic bistability with novel electrical and spin conduction properties. Our findings pave the way to the fundamental understanding and future design of active multifunctional organic materials for spintronics applications.

  10. Breakdown of ionic character of molecular alkali bromides in inner-valence photoionization

    SciTech Connect

    Karpenko, A. Iablonskyi, D.; Kettunen, J. A.; Cao, W.; Huttula, M.; Aksela, H.; Urpelainen, S.

    2014-05-28

    The inner-valence region of alkali bromide XBr (X=Li, Na, K, Rb) vapours has been studied experimentally by means of synchrotron radiation excited photoelectron spectroscopy. Experimental spectra were analyzed by comparing them with available theoretical results and previous experiments. Ionic character of alkali bromides is seen to change in the inner-valence region with increasing atomic number of the alkali atom. A mechanism involving mixing between Br 4s and Rb 4p orbitals has been suggested to account for the fine structure observed in inner-valence ionization region of RbBr.

  11. Species with negative electron affinity and standard DFT methods. Finding the valence anions.

    PubMed

    Puiatti, Marcelo; Vera, D Mariano A; Pierini, Adriana B

    2008-03-14

    Recently, we have shown that traditional bound-electron DFT models are reliable enough to reproduce negative electron affinities (EA) within a few meV, as long as the valence anion state is found, but they seem to fail in predicting the lowest EA when the ground anion state obtained is non-valence, which holds the extra electron in a diffuse orbital around the molecule; here we propose an alternative approach for finding the valence anion state, based on the stabilization exerted by a polar solvent; the methodology yields correct EA values (i.e. beyond the Koopman's theorem approximation) by gradually decreasing the dielectric constant of the medium.

  12. Observation of the Forbidden Magnetic Dipole Transition 6{sup 2}P{sub ½} --> 7{sup 2}P{sub ½} in Atomic Thallium

    DOE R&D Accomplishments Database

    Chu, S.

    1976-10-01

    A measurement of the 6{sup 2}P{sub ½} --> 7{sup 2}P{sub ½} forbidden magnetic dipole matrix element in atomic thallium is described. A pulsed, linearly polarized dye laser tuned to the transition frequency is used to excite the thallium vapor from the 6{sup 2}P{sub ½} ground state to the 7{sup 2}P{sub ½} excited state. Interference between the magnetic dipole M1 amplitude and a static electric field induced E1 amplitude results in an atomic polarization of the 7{sup 2}P{sub ½} state, and the subsequent circular polarization of 535 nm fluorescence. The circular polarization is seen to be proportional to / as expected, and measured for several transitions between hyperfine levels of the 6{sup 2}P{sub ½} and 7{sup 2}P{sub ½} states. The result is = -(2.11 +- 0.30) x 10{sup -5} parallel bar e parallel bar dirac constant/2mc, in agreement with theory.

  13. New superhindered polydentate polyphosphine ligands P(CH2CH2P(t)Bu2)3, PhP(CH2CH2P(t)Bu2)2, P(CH2CH2CH2P(t)Bu2)3, and their ruthenium(II) chloride complexes.

    PubMed

    Gilbert-Wilson, Ryan; Field, Leslie D; Bhadbhade, Mohan M

    2012-03-05

    The synthesis and characterization of the extremely hindered phosphine ligands, P(CH(2)CH(2)P(t)Bu(2))(3) (P(2)P(3)(tBu), 1), PhP(CH(2)CH(2)P(t)Bu(2))(2) (PhP(2)P(2)(tBu), 2), and P(CH(2)CH(2)CH(2)P(t)Bu(2))(3) (P(3)P(3)(tBu), 3) are reported, along with the synthesis and characterization of ruthenium chloro complexes RuCl(2)(P(2)P(3)(tBu)) (4), RuCl(2)(PhP(2)P(2)(tBu)) (5), and RuCl(2)(P(3)P(3)(tBu)) (6). The bulky P(2)P(3)(tBu) (1) and P(3)P(3)(tBu) (3) ligands are the most sterically encumbered PP(3)-type ligands so far synthesized, and in all cases, only three phosphorus donors are able to bind to the metal center. Complexes RuCl(2)(PhP(2)P(2)(tBu)) (5) and RuCl(2)(P(3)P(3)(tBu)) (6) were characterized by crystallography. Low temperature solution and solid state (31)P{(1)H} NMR were used to demonstrate that the structure of RuCl(2)(P(2)P(3)(tBu)) (4) is probably analogous to that of RuCl(2)(PhP(2)P(2)(tBu)) (5) which had been structurally characterized.

  14. The final stages of spliceosome maturation require Spp2p that can interact with the DEAH box protein Prp2p and promote step 1 of splicing.

    PubMed Central

    Roy, J; Kim, K; Maddock, J R; Anthony, J G; Woolford, J L

    1995-01-01

    Pre-mRNA processing occurs by assembly of splicing factors on the substrate to form the spliceosome followed by two consecutive RNA cleavage-ligation reactions. The Prp2 protein hydrolyzes ATP and is required for the first reaction (Yean SL, Lin RJ, 1991, Mol Cell Biol 11:5571-5577; Kim SH, Smith J, Claude A, Lin RJ, 1992, EMBO J 11:2319-2326). The Saccharomyces cerevisiae SPP2 gene was previously identified as a high-copy suppressor of temperature-sensitive prp2 mutants (Last RL, Maddock JR, Woolford JL Jr, 1987, Genetics 117:619-631). We have characterized the function of Spp2p in vivo and in vitro. Spp2p is an essential protein required for the first RNA cleavage reaction in vivo. Depletion of Spp2p from yeast cells results in accumulation of unspliced pre-mRNAs. A temperature-sensitive spp2-1 mutant accumulates pre-mRNAs in vivo and is unable to undergo the first splicing reaction in vitro. However, spliceosomal complexes are assembled in extracts prepared from the mutant. We show that Spp2p function is required after spliceosome assembly but prior to the first reaction. Spp2p associates with the spliceosome before the first RNA cleavage reaction and is likely to be released from the spliceosome following ATP hydrolysis by Prp2p. The Prp2 and Spp2 proteins are capable of physically interacting with each other. These results suggest that Spp2p interacts with Prp2p in the spliceosome prior to the first cleavage-ligation reaction. Spp2p is the first protein that has been found to interact with a DEAD/H box splicing factor. Images FIGURE 1 FIGURE 2 FIGURE 3 FIGURE 4 FIGURE 5 FIGURE 6 FIGURE 7 FIGURE 8 FIGURE 9 PMID:7493316

  15. Calculation of Collisional Cross Sections for the 2P3/2 - 2P1/2 Transition in Alkali-Noble Gas Systems

    DTIC Science & Technology

    2010-03-01

    collisional cross sections given input potentials of a system may provide a partial answer to this question in systems where collisions play a major...CALCULATION OF COLLISIONAL CROSS SECTIONS FOR THE 2P3/2 → 2P1/2 TRANSITION IN ALKALI-NOBLE GAS SYSTEMS THESIS Sam Butler, Captain, USAF AFIT/GAP/ENP...States Air Force, Department of Defense, or the United States Government. AFIT/GAP/ENP/10-M04 CALCULATION OF COLLISIONAL CROSS SECTIONS FOR THE 2P3/2

  16. Electronic structure of Na{sub x}Cu{sub 1-x}In{sub 5}S{sub 8} compounds: X-ray photoemission spectroscopy study and band structure calculations

    SciTech Connect

    Guillot-Deudon, Catherine; Harel, Sylvie; Mokrani, Arezki; Lafond, Alain; Barreau, Nicolas; Fernandez, Vincent; Kessler, John

    2008-12-15

    The aim of the present work is to complete a preliminary study concerning the electronic band structure investigations of Na{sub x}Cu{sub 1-x}In{sub 5}S{sub 8} compounds with 0{<=}x{<=}1, which are expected to be formed at the Cu(In,Ga)Se{sub 2}/In{sub 2}S{sub 3} interface. The band structure calculations demonstrate that for the compounds containing both Na and Cu, as the Cu content increases the band gap tends to decrease, and x-ray photoemission spectroscopy measurements show that this variation is mainly due to valence-band-maximum shift along the solid solution. The band gap strongly depends on the nature of the monovalent cation, and the band structure calculations demonstrate that the d electrons of copper are responsible for the shift of the valence band. In addition, it is worth noting that the Cu-containing compounds have indirect gaps.

  17. Singing with the Band

    ERIC Educational Resources Information Center

    Altman, Timothy Meyer; Wright, Gary K.

    2012-01-01

    Usually band, orchestra, and choir directors work independently. However, the authors--one a choral director, the other a band director--have learned that making music together makes friends. Not only can ensemble directors get along, but joint concerts may be just the way to help students see how music can reach the heart. Combined instrumental…

  18. Rubber Band Science

    ERIC Educational Resources Information Center

    Cowens, John

    2005-01-01

    Not only are rubber bands great for binding objects together, but they can be used in a simple science experiment that involves predicting, problem solving, measuring, graphing, and experimenting. In this article, the author describes how rubber bands can be used to teach the force of mass.

  19. Stretch Band Exercise Program

    ERIC Educational Resources Information Center

    Skirka, Nicholas; Hume, Donald

    2007-01-01

    This article discusses how to use stretch bands for improving total body fitness and quality of life. A stretch band exercise program offers a versatile and inexpensive option to motivate participants to exercise. The authors suggest practical exercises that can be used in physical education to improve or maintain muscular strength and endurance,…

  20. Chemical Bonding: The Orthogonal Valence-Bond View

    PubMed Central

    Sax, Alexander F.

    2015-01-01

    Chemical bonding is the stabilization of a molecular system by charge- and spin-reorganization processes in chemical reactions. These processes are said to be local, because the number of atoms involved is very small. With multi-configurational self-consistent field (MCSCF) wave functions, these processes can be calculated, but the local information is hidden by the delocalized molecular orbitals (MO) used to construct the wave functions. The transformation of such wave functions into valence bond (VB) wave functions, which are based on localized orbitals, reveals the hidden information; this transformation is called a VB reading of MCSCF wave functions. The two-electron VB wave functions describing the Lewis electron pair that connects two atoms are frequently called covalent or neutral, suggesting that these wave functions describe an electronic situation where two electrons are never located at the same atom; such electronic situations and the wave functions describing them are called ionic. When the distance between two atoms decreases, however, every covalent VB wave function composed of non-orthogonal atomic orbitals changes its character from neutral to ionic. However, this change in the character of conventional VB wave functions is hidden by its mathematical form. Orthogonal VB wave functions composed of orthonormalized orbitals never change their character. When localized fragment orbitals are used instead of atomic orbitals, one can decide which local information is revealed and which remains hidden. In this paper, we analyze four chemical reactions by transforming the MCSCF wave functions into orthogonal VB wave functions; we show how the reactions are influenced by changing the atoms involved or by changing their local symmetry. Using orthogonal instead of non-orthogonal orbitals is not just a technical issue; it also changes the interpretation, revealing the properties of wave functions that remain otherwise undetected. PMID:25906476